I fəsil. Nanoelektronikaning fizik asoslari

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I fəsil. Nanoelektronikaning fizik asoslari
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bet | 2/51 | Sana | 19.12.2023 | Hajmi | 2,83 Mb. | | #123700 |
Bog'liq 2017-2422 TayyorI fəsil. Nanoelektronikaning fizik asoslari................ 15 1.1nanotexnologiyaning rivojlanish istiqbollari............ 15 1.2. Kichik o'lchamli tuzilmalarda yuzaga keladigan asosiy hodisalar........................................................................... 23 1.2.1. Kvant cheklovlari i.......................................... 24 1.2.2. Yuk tashuvchilarni ballistik tashish...................... 27 1.2.3. Kvant interferensiyası............................................ 29 1.2.4. Yuk tashuvchilarning tunnel o'tishlari............................. 30 1.3. Kvant hajmi effektlari................................................. 33 1.4. Kvant chuqurlari......................................................... 34 1.5. Kvant simlari........................................................ 36 1.6. Kvant nuqtalari.......................................................... 39 1.7. Nanostruktura elementlari.Erkin yuzalar va fazalararo chegaralar r........................................................ 41
II fəsil. Yupqa plyonkalar va nanostrukturalarni ishlab chiqarish usullari.............................................. 49
2.1. Nanostrukturalarni yaratish usullari...................... 49 2.2. Fotolitografiya va uning muammolari......................... 53 2.3. Termal bug'lanish usuli..................................... 55 2.4. Katodli purkash usuli...................................... 56 2.5. Metall-organik birikmalarning gaz fazali epitaksial cho'kishi.......................................................................... 59
2.6. Molekulyar nur epitaksisi........................................ 67 2.7. Molekulyar nurli epitaksiya qurilmasi......................... 70 2.8. MBE usulida ekstremal panjaralarning kvant nuqtalarini olish..................................................................... 78
IIIfəsil. Skanerli zond mikroskopi.................. 82 3.1. Nanotexnologiyanın zond üsulları............................ 82 3.2. Skanerli tunnel mikroskopi (STM).......................... 85 3.2.1. Doimiy tunnel oqimi usuli...................................... 91 3.2.2. Doimiy balandlik usuli (Z=const) .......................... 92 3.3. STM yordamida tunnel kontaktining volt-amper-tokini o'lchash.................................................... 93 3.3.1. Metall-metall kontaktining volt-amper xarakteristikasi..................................................................... 94 3.3.2.Metal-yarim o'tkazgich kontaktining volt-amper xarakteristikasi....................................................... 95 3.4. Zond usullari bilan sirt relyefini o'zgartirish...... 96 3.5. Atom muhandisligi.................................................... 98 3.6. Metall va yarim o'tkazgichlarning mahalliy oksidlanishi 105 3.7. Gaz fazasidan metall-organik birikmalarning mahalliy kimyosi
sedimentatsiya................................................................. 107 3.8.Atom kuch mikroskopi.......................................... 108 3.8.1. AFM–in zond sensorları......................................... 115 3.8.2. AFM–in aloqa kvazistatik usullar................... 117 3.8.3. AFM– kontaktsiz raqs usullari............................ 119 3.9. Elektr-kuch mikroskopi...................................... 121 3.10. Magnit kuch mikroskopi..................................... 125
IV fəsil. Nanolitografiya usullari.............................. 129
4.1. Fotolitoqrаfiyа prosesi.............................................. 131 4.2. Elektron nurli litografiya (EŞL).................................. 135
4.3. Rentgen litografiyasi.................................................... 143 4.4. Ion nurli litografiya (İŞL)........................................... 145 4.5. Imprint litografiyasi (nanoçap).................................... 147 4.6. Zond litografiyası...................................................... 154 4.7. Tuklar nanolitografiyasi............................................. 157
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