Namangan Institute of Engineering and Technology

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10.25.2023
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Conclusion. The synthesis and application of nanostructured materials represent a significant
leap forward in nuclear physics. Their unique properties offer solutions to critical challenges in the
field, from enhancing reactor efficiency to improving safety measures. As research continues to
advance, the potential of these materials in transforming nuclear technology is vast, with
implications for energy, healthcare, and environmental protection.
Literature
1.
Johnson, M. et al. (2022). "Advanced Synthesis Techniques for Nanostructured Materials
in Nuclear Applications". Journal of Nanotechnology in Nuclear Physics.
2.
Ahmed, S., and Kumar, R. (2023). "Nanostructured Materials: Enhancing the Efficiency
and Safety of Nuclear Reactors". Nuclear Energy and Technology Review.
3.
Smith, J., and Zhao, L. (2024). "Developments in Nanostructured Materials for Radiation
Shielding". Radiation Protection Quarterly.
4.
Lee, H., and Gonzalez, R. (2021). "Nanostructured Materials in Radiation Detection: A New
Era of Sensitivity and Accuracy". Journal of Nuclear Instrumentation.
CDS/SI(P) GETEROSTRUKTURALI YARIMO`TKAZGICHLARNING SIRT HOLATLAR ZICHLIGIGA
MAGNIT MAYDONINI TA’SIRINI MODELLASHTIRSH
U.I.Erkaboyev, M.G’.Dadamirzayev
Namangan muhandislik- texnologiya instituti
Tel: 994367755 e-mail:
muzaffardadamir81@gmail.com
Annotasiya: CdS/Si(p) geterostrukturali yarimo`tkazgichning sirt holatlar zuchligini magnit
maydon va haroratga bog’liqligini aniqlashlovchi matematik model taqdim etilgan.
Kalit so'zlar: geterostruktura, fotoelektrik o'zgartirgich, chuqur sathlar, sig'im-kuchlanish
xususiyatlari, sirt holatlari.
Ma’lumki fotoelektrik o`zgartirgichlar sifatida keng qo`llaniladigan CdS/Si(p) geterostrukturali
yarimo`tkazgichning elektr, optik va magnit hossalarini o`rganish dolzarb muammolardan biri
hisoblanadi. Jumladan CdS/Si(p) ni geterochegarasida nuqsonlarning hosil bo`lishi, ushbu
yarimo`tkazgichli materiallarning elektr xususiyatlariga salbiy ta’sir qilsa, chuqur energetik
sathlardagi sirt holatlar zichligi esa geterostrukturani fotoelektrik samaradorligini yomonlashishiga
olib keladi.
Bugungi kunda, sirt holatlar zichligini o`lchash, uni tashqi omillarga bog`liqligini aniqlash
bo`yicha bir qator tadqiqotlar olib borilgan. Xususan, [1,2] ishlarda yarimo`tkazgichli strukturalarda
sirt holatlar zichligini Volt-Farad usuli yordamida aniqlangan. Bunda sirt holatlarning zaryadi
qo`llaniladigan doimiy siljish kuchlanishiga bog`liq bo`lgan holatlar uchun sig`im-kuchlanish
xususiyatlarining chastotaga bog`liqligidan yarimo`tkazgichlarda sirt holatlarning zichligini hisoblash
usuli taklif etilgan [3,4].
Lekin bu ishlarda yarimo`tkazgich-dielektrik chegarasidagi sirt holatlar zichligiga magnit
maydon ta’siri ko`rilmagan. Sirt holatlarni magnit maydon va haroratga bog’liqligini aniqlash
bo`yicha mukammal matematik model ishlab chiqilmagan.
Ishning asosiy maqsadi CdS/Si(p) geterostrukturali yarimo`tkazgichning sirt holatlar zuchligini
magnit maydonga bog`liqligini modellashtirishdan iborat.
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