Query: pin diode in lna

Candidate papers:

abstract: This paper presents electromagnetic simulation software package WIPL D microwave and design, passive PIN diode limiter for higher RF power in combination of waveguide and print techniques. The Limiter is designed for use at X range of protection low noise semiconductor amplifiers and includes two spatially separated PIN diodes.
author_names: Nenad Popovic

Predrag S Manojlovic
title: Protection LNA at X range of PIN diode limiter for higher RF power
venue: 2014 22nd Telecommunications Forum Telfor (TELFOR)
year: 2014

abstract: In this paper, the design and fabrication of a 12 22 GHz monolithic integrated GaAs PIN diodes and pseudomorphic high electron mobility transistors (pHEMTs) limiter low noise amplifier (limiter LNA) is proposed. A multi branch limiter with the antiparallel PIN diode topology is employed to enhance the power capacity of the limiter LNA. The PIN diode based limiter LNA can work in 10W continuous wave power. The fabricated limiter LNA demonstrated an average small signal gain of 26 dB, a noise figure (NF) of less than 2.7 dB over 12 22 GHz frequency range. The output power at 1dB compression point (P1dB) is larger than 10 dBm and the chip size is 3.0 mmx1.1 mm. Compared with the traditional hybrid integrated circuit, this chip has smaller size and better RF performance.
author_names: Lu Cui

Xin Zhou

Yuanpeng Li

Hongtao Wei
title: Codesign of 12 22 GHz Integrated PIN diode Limiter and Low Noise Amplifier
venue: 2018 14th IEEE International Conference on Solid State and Integrated Circuit Technology (ICSICT)
year: 2018

abstract: As a RF front end microwave device, power limiters are often placed between the receiving antenna and the receiver, aiming at avoiding the rear circuit, such as LNA, being interfered or damaged by high power microwave. By analyzing the parameters of the PIN diode in the power limiter, the paper studied how these parameters affect the capabilities of power limiter, including insertion loss, power capacity, threshold level. By selecting several models of PIN diodes with different parameters, the effect of PIN diodes on performance of power limiter is studied. Moreover, under the condition of power injection, the behavior of the power limiter is also experimentally verified.
author_names: Ziliang Wang

Hefei Cao

Chuangchuang Zhang
title: Research on the influence of PIN diode on limiter performance in power limiter
venue: 2017 7th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies (MAPE)
year: 2017

abstract: In this paper, a tunable low noise amplifier (LNA) is developed. The operation bands of the LNA can be switched between 2.4 GHz and 5.8 GHz by controlling a PIN diode in the output matching network. At the forward bias state of the PIN diode, the LNA operates at 2.4 GHz, the measured gain is 16 dB and the noise figure is below 0.6 dB within a bandwidth of 100 MHz. At the reverse bias state of the PIN diode, the LNA works at 5.8 GHz, the measured gain is 9.7 dB and the noise figure is below 1.7 dB within a bandwidth of 200 MHz. Compared with the wideband LNA covering 2.4GHz and 5.8GHz bands, efficient improvement in gain and noise figure is observed.
author_names: Dezhou Hou

Wei Hong

Ke Wu
title: A 2.4 GHz and 5.8 GHz tunable low noise amplifier using PIN diode
venue: 2011 China Japan Joint Microwave Conference
year: 2011

abstract: This paper presents a new technique for an antenna switch used in WiMAX applications. The switch is based on a PIN diode SPDT switch with a bandpass filter integrated in the receiving path. The filter is realised by using an inductor parallel to the PIN diode. When reverse biased, the diode behaves as a capacitor, which resonates with the inductor resulting in a bandpass response. In the experiment, the prototype has exhibited a good performance. At Tx ON state, it produces 38.5 dB of isolation and 1 dB of insertion loss. At Rx ON state, it produces 18.3 dB of isolation and 1.2 dB of insertion loss. The integrated bandpass filter has a 3 dB bandwidth of 650 MHz. It eliminates the need for a pre selection filter prior to the LNA, hence improving the noise figure of the receiving system.
author_names: Padisan Phudpong

Narit Youngthanisara

Matanee Kitjaroen

Patharakorn Rattanawan

Siwaruk Siwamogsatham
title: A high isolation low insertion loss filter integrated PIN diode antenna switch
venue: 2009 Asia Pacific Microwave Conference
year: 2009

abstract: A fully integrated 5.5GHz high linearity low noise amplifler (LNA) using post linearization technique, implemented in a 0.18"m RF CMOS technology, is demonstrated. The proposed technique adopts an additional folded diode with a parallel RC circuit as an intermodulation distortion (IMD) sinker. The proposed LNA not only achieves high linearity, but also minimizes the degradation of gain, noise flgure (NF) and power consumption. The LNA achieves an input third order intercept point (IIP3) of +8:33dBm, a power gain of 10.02dB, and a NF of 3.05dB at 5.5GHz biased at 6mA from a 1.8V power supply.
author_names: Chieh-Pin Chang

Wei-Chih Chien

Chun-Chi Su

Yeong-Her Wang

Ja-Hao Chen
title: Linearity improvement of cascode CMOS LNA using a diode connected NMOS transistor with a parallel RC circuit
year: 2010

abstract: In this paper, a novel concurrent design of integrated PIN diode based limiter and low noise amplifier (LNA) is presented for <italic>Ka</italic> band MMICs fabricated using a combined PIN/0.15 <inline formula> <tex math notation="LaTeX"\mu \text{m} /tex math>/inline formula> pHEMT technology. To improve the small signal performance and the power handling capability of the limiter LNA, the improvement of the PIN limiter circuit structure and the survivability of the LNA network are proposed. In addition, the total chip area is <inline formula> <tex math notation="LaTeX"$2.5\\text {mm} \times 1.2\\text {mm} /tex math>/inline formula> with an equalizer integrated on chip behind the limiter LNA to improve the bandwidth with a minimum impact on overall NF. The measurements show that the proposed limiter LNA with only two stage limiter structure tolerates up to 38 dBm continuous wave (CW) input power without failure, and the average gain and the noise figure for the limiter LNA are 17 dB and 2.2 2.6 dB, respectively, on the 30 38 GHz frequency bandwidth.
author_names: Lin Yang

Lin-An Yang

Taotao Rong

Yinchang Li

Zhi Jin

Yue Hao
title: Codesign of {K} a Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier
venue: IEEE Access
year: 2019

abstract: A MMIC low noise amplifier (LNA) can be paired with an external PIN diode bypass switch to provide overload protection for mobile television receiver applications at 47 to 870 MHz.
author_names: Chin-leong Lim
title: PIN Switch Protects LNA from Overloads
year: 2010

abstract: This paper reports on a GaAs HBT Variable Gain Amplifier (VGA) which monolithically integrates a GaAs PIN diode as a variable resistor to achieve wide gain control. The PIN diode is made from the intrinsic MBE layers of the HBT collector base junction which consists of a 7000 /spl Aring/ thick i region. The novel VGA topology employs active feedback and output buffering to obtain high IP3 performance and is the first PIN HBT VGA reported of its kind. The VGA obtains 10 dB gain and over 25 dB of gain control range at 1 GHz. The output IP3 is 15.1 dBm and the noise figure is 9.3 dB at maximum gain. The corresponding input IP3 is 15.1 dBm and remains constant over gain control which is an attractive feature of the HBT PIN VGA. The PIN diode VGA design is realized in a miniature 0.8/spl times/0.4 mm/sup 2/ area. Integrated with a previously developed HBT LNA, the resultant low noise VGA MMIC demonstrates 2.1 dB noise figure, >35 dB gain, +13.5 dBm OIP3, and over 25 dB of gain control at 1 GHz.<ETX>
author_names: K Kobayashi

A Oki

Liem T Tran

Dwight C Streit
title: A novel baseband 1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control
venue: Proceedings of 1995 IEEE MTT S International Microwave Symposium
year: 1995

abstract: This paper reports on a GaAs HBT Variable Gain Amplifier (VGA) which monolithically integrates a GaAs PIN diode as a variable resistor to achieve wide gain control. The PIN diode is made from the intrinsic MBE layers of the HBT collector base junction which consists of a 7000 /spl Aring/ thick i region. The novel VGA topology employs active feedback and output buffering to obtain high IP3 performance and is the first PIN HBT VGA reported of its kind. The VGA obtains 10 dB gain and over 25 dB of gain control range at 1 GHz. The output IP3 is +5.1 dBm and the noise figure is 9.3 dB at maximum gain. The corresponding input IP3 is +5.1 dBm and remains constant over gain control which is an attractive feature of the HBT PIN VGA. The PIN diode VGA design is realized in a miniature 0.8/spl times/0.4 mm/sup 2/ area. Integrated with a previously developed HBT LNA, the resultant low noise VGA MMIC demonstrates 2.1 dB noise figure, >35 dB gain, +13.5 dBm OIP3, and over 25 dB of gain control at 1 GHz.<ETX>
author_names: K Kobayashi

A Oki

Liem T Tran

Dwight C Streit
title: A novel baseband 1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control
venue: IEEE 1995 Microwave and Millimeter Wave. Monolithic Circuits Symposium. Digest of Papers
year: 1995