Query: Terahertz integrated electronic and hybrid electronic–photonic systems

Candidate papers:

abstract: The field of terahertz integrated technology has undergone significant development in the past ten years. This has included work on different substrate technologies such as III V semiconductors and silicon, work on field effect transistor devices and heterojunction bipolar devices, and work on both fully electronic and hybrid electronic photonic systems. While approaches in electronic and photonics can often seem distinct, techniques have blended in the terahertz frequency range and many emerging systems can be classified as photonics inspired or hybrid. Here, we review the development of terahertz integrated electronic and hybrid electronic photonic systems, examining, in particular, advances that deliver important functionalities for applications in communication, sensing and imaging. Many of the advances in integrated systems have emerged, not from improvements in single devices, but rather from new architectures that are multifunctional and reconfigurable and break the trade offs of classical approaches to electronic system design. We thus focus on these approaches to capture the diversity of techniques and methodologies in the field.This Review Article examines the development of terahertz integrated electronic and hybrid electronic photonic systems, considering, in particular, advances that deliver important functionalities for applications in communication, sensing and imaging.
author_names: Kaushik Sengupta

Tadao Nagatsuma

Daniel M Mittleman
title: Terahertz integrated electronic and hybrid electronic photonic systems
year: 2018

abstract: Graphene is in many respects a nanomaterial with unique properties. Here I discuss the electronic structure, transport and optical properties of graphene, and how these are utilized in exploratory electronic and optoelectronic devices. Some suggestions for needed advances are made.
author_names: Phaedon Avouris
title: Graphene: electronic and photonic properties and devices.
venue: Nano letters
year: 2010

abstract: This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two dimensional Dirac like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron electron and electron phonon interactions in single layer and multilayer graphene are also presented.
author_names: Antonio H Castro Neto

Francisco Guinea

Nuno M R Peres

Kostya S Novoselov

Andre K Geim
title: The electronic properties of graphene
year: 2009

abstract: Recent research and development has been incredibly successful at advancing the capabilities for vacuum electronic device (VED) sources of powerful terahertz (THz) and near THz coherent radiation, both CW or average and pulsed. Currently, the VED source portfolio covers over 12 orders of magnitude in power (mW to GW) and two orders of magnitude in frequency (from 0.1 to 10 THz) Further advances are still possible and anticipated. They will be enabled by improved understanding of fundamental beam wave interactions, electromagnetic mode competition and mode control, along with research and development of new materials, fabrication methods, cathodes, electron beam alignment and focusing, magnet technologies, THz metrology and advanced, broadband output radiation coupling techniques.
author_names: John H Booske

Richard Dobbs

Colin D Joye

Carol Kory

G R Broderick Neil

Gun-Sik Park

Jaehun Park

Richard J Temkin
title: Vacuum Electronic High Power Terahertz Sources
venue: IEEE Transactions on Terahertz Science and Technology
year: 2011

abstract: Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio frequency emitters enable wireless communications. But the terahertz region (1 10 THz; 1 THz 1012 Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low consumption, solid state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm 2 up to 50 K. These results are very promising for extending the present laser concept to continuous wave and high temperature operation, which would lead to implementation in practical photonic systems.
author_names: Rudeger Kohler

Alessandro Tredicucci

Fabio Beltram

Harvey E Beere

Edmund H Linfield

A Giles Davies

David A Ritchie

Rita Claudia Iotti

Fausto Rossi
title: Terahertz semiconductor heterostructure laser
venue: Nature
year: 2002

abstract: Ultrathin epitaxial graphite was grown on single crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt second. All graphene electronically coherent devices and device architectures are envisaged.
author_names: Claire Berger

Zhi-min Song

Xuebin Li

Xiaosong Wu

Nate Brown

Cecile Naud

Didier Mayou

Tianbo Li

Joanna Hass

Alexei Marchenkov

Edward H Conrad

Phillip N First

Walt A de Heer
title: Electronic Confinement and Coherence in Patterned Epitaxial Graphene
venue: Science
year: 2006

abstract: Terahertz spectroscopy systems use far\|infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems; novel, higher\|power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.
author_names: Zhang Xi
title: Materials for terahertz science and technology
year: 2003

abstract: We present what is to our knowledge the first imaging system based on optoelectronic terahertz time domain spectroscopy. Terahertz time domain waveforms are downconverted from the terahertz to the kilohertz frequency range, and the waveform for each pixel is frequency analyzed in real time with a digital signal processor to extract compositional information at that point. We demonstrate applications to package inspection and chemical content mapping in biological objects.
author_names: B B Hu

Martin C Nuss
title: Imaging with terahertz waves.
venue: Optics letters
year: 1995

abstract: This revised second edition on the "Quantum Theory of the Optical and Electronic Properties of Semiconductors" presents the basic elements needed to understand and engage in research in semiconductor physics. In this revised second edition misprints are corrected and some new and more detailed material is added. In order to treat the valence band structure of semiconductors, an introduction to the k.p. theory and the related description in terms of the Luttinger Hamiltonian is included. An introductory chapter on mesoscopic semiconductor structures discussing the modifications of the envelope function approximation caused by the spatial quantum confinement is also included. Many results are developed in parallel first for bulk material, and then for quasi two dimensional quantum wells, and for quasi one dimensional quantum wires. Semiconductor quantum dots are treated in a separate chapter. The discussion of time dependent and coherent phenomena in semiconductors has been considerably extended by including a section dealing with the theoretical description of photon echoes in semiconductors. A new chapter on magneto absorption has been added, in which magneto excitons and magneto plasmas in two dimensional systems are discussed. The chapter on electron kinetics due to the interaction with longitudinal optical phonons has been extended. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics, and is aimed at solid state physicists, engineers, materials and optical scientists.
author_names: Hartmut Haug

Stephan W Koch
title: Quantum Theory of the Optical and Electronic Properties of Semiconductors
year: 1990

abstract: The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.
author_names: Francesco Bonaccorso

Z Sun

Tawfique Hasan

Andrea C Ferrari
title: Graphene photonics and optoelectronics
year: 2010