Query: sliding ferroelectricity semiconductor

Candidate papers:

abstract: Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf2CF2 monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial compressive strain. Accompanying this structural transition, a metal semiconductor transition occurs. The in plane shift of unilateral fluorine layer leads to a polarization pointing out of plane. Such ferroelectricity is unconventional, similar to the recentlyproposed interlayer sliding ferroelectricity but not identical. Due to its specific hexapetalous potential energy profile, the possible ferroelectric switching paths and domain walls are nontrivial, which are mediated via the metallic paraelectric state. In this sense, the metallic walls can be manipulated by reshaping the ferroelectric domains.
author_names: Ziwen Wang

Ning Ding

Churen Gui

Ming An

Shuai Dong
title: Ferroelectricity in strained Hf2CF2 monolayer
venue: Physical Review Materials
year: 2021

abstract: Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer thick, semiconductor 2D ferroelectrics, where the individual constituents are well studied non ferroelectric monolayer transition metal dichalcogenides (TMDs) namely WSe2, MoSe2, WS2, and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral stacking configurations, with out of plane polarization that is flipped by in plane sliding motion. Fabricating nearly parallel stacked bilayers enables the visualization of moir\'e ferroelectric domains as well as electric field induced domain wall motion with piezoelectric force microscopy (PFM) Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built in interlayer potential, in good agreement with first principles calculations. The novel semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties.
author_names: Xirui Wang

Kenji Yasuda

James C Hone

Pablo Jarillo-Herrero
title: Interfacial ferroelectricity in rhombohedral stacked bilayer transition metal dichalcogenides
year: 2021

abstract: According to the model of sliding ferroelectricity we proposed in 2017, a type of vertical polarization switchable via interlayer sliding may exist in a series of two dimensional van der Waals bilayers and multilayers. Such intriguing ferroelectricity has been recently experimentally confirmed in BN and WTe2 bilayer/multilayer systems. However, they are respectively insulators and metals with weak polarizations. Here, we search for a combination of high mobility semiconductors and ferroelectricity with relatively high polarizations, and we note that MoSi2N4 monolayer has been recently fabricated to centimeter scale based on MoN2 monolayer (Science 2020, 369, 670) We show first principles evidence of strong interlayer sliding ferroelectricity in high mobility semiconducting MoA2N4 (A Si or Ge) bilayers and multilayers. They possess tunable bandgaps within the desirable range for nanoelectronics, with the current highest polarizations in sliding ferroelectrics known to date due to strong interlayer van der Waals interactions. Such a successful combination of these properties may render the long sought and efficient computing in memory possible. Their high polarizations induce strong Moire potential and unique band alignments for exciton trapping in twisted MoA2N4 bilayer. The varying charge distribution of different stacking in MoN2/MoSi2N4 hetero bilayer also gives rise to a high alternating voltage when used as a nanogenerator, suggesting promising potential for energy harvesting.
author_names: Tingting Zhong

Zhuhua Zhang

Jinhua Gao

Menghao Wu
title: Sliding ferroelectricity in two dimensional MoA2N4 (A Si or Ge) bilayers: high polarizations and Moire potentials
year: 2021

abstract: Enriching the functionality of ferroelectric materials with visible light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two dimensional (2D) van der Waals layered a In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out of plane and in plane polarization, where the reversal of the out of plane polarization by a vertical electric field also induces the rotation of the in plane polarization. On the basis of the in plane switchable diode effect and the narrow bandgap ~1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
author_names: Chaojie Cui

Weijin Hu

Xingxu Yan

Christopher Addiego

Wenpei Gao

Yaoling Wang

Zhe Wang

Linze Li

Yingchun Cheng

Peng Li

Xixiang Zhang

Husam N Alshareef

Tom Wu

Wenguang Zhu

Xiaoqing Pan

Lain-Jong Li
title: Intercorrelated In Plane and Out of Plane Ferroelectricity in Ultrathin Two Dimensional Layered Semiconductor In2Se3.
venue: Nano letters
year: 2018

abstract: Ultrathin ferroelectric materials could potentially enable low power logic and nonvolatile memories 1 2 As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides the archetypal ferroelectric system 3 Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes 4 Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO 2 a fluorite structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization driven memories and ferroelectric based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition metal oxide systems that is, from perovskite derived complex oxides to fluorite structure binary oxides in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime. Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low temperature atomic layer deposition, even at thicknesses of just one nanometre.
author_names: Suraj S Cheema

Dae Woong Kwon

Nirmaan Shanker

Roberto dos Reis

Shang-Lin Hsu

Jun Xiao

Haigang Zhang

Ryan Wagner

Adhiraj Datar

M McCarter

Claudy Rayan Serrao

Ajay K Yadav

Golnaz Karbasian

Cheng-Hsiang Hsu

Ava J Tan

Li-Chen Wang

Vishal P Thakare

Xiang Zhang

Apurva Mehta

Evguenia A Karapetrova

Rajesh Vilas Chopdekar

Padraic Shafer

Elke Arenholz

Chenming Calvin Hu

Roger Proksch

Ramamoorthy Ramesh

Jim Ciston

Sayeef S Salahuddin
title: Enhanced ferroelectricity in ultrathin films grown directly on silicon
venue: Nature
year: 2020

abstract: The effect of annealing temperature on the ferroelectricity of HfAlOx with Al concentration of 4.5% is physically and electrically investigated by metal ferroelectric insulator semiconductor (MFIS) platform. HfAlOx with 600 degC annealing is confirmed to possess ferroelectricity by the formation of non centrosymmetry orthorhombic III phase, clockwise capacitance voltage hysteresis, significant polarization electric field hysteresis curve, and in depth analysis of current component as compared with non ferroelectric HfO2. Compared to commonly discussed MFM devices from which thermal annealing of 800 degC is required to induce ferroelectricity, the relatively lower thermal budget to form ferroelectric HfAlOx in MFIS devices can be attributed to the compressive thermal stress caused by the difference in thermal expansion between the Si substrate and HfAlOx during thermal annealing, and it is the stress that helps lower the annealing temperature to crystallize HfAlOx in the orthorhombic phase. In addition, MFIS devices with 600 degC annealed HfAlOx hold the prospect of becoming a promising candidate for memory applications by demonstrating a memory window of 0.6 V with 3 V operation voltage which is comparable with or superior to those with conventional ferroelectric films. Furthermore, the process to from ferroelectric HfAlOx based devices can be fully integrated into incumbent mass production fabs, empowering next generation memory technology.
author_names: Kuen-Yi Chen

Ka-Lip Chu

Pin-Hsuan Chen

Yung-Hsien Wu
title: Ferroelectricity of low thermal budget HfAlOx for devices with metal ferroelectric insulator semiconductor structure
year: 2016

abstract: Using a combination of Landau theoretical analysis and first principles calculations, we establish a spontaneous symmetry breaking of the metallic state of the 1T monolayer of MoS2 that opens up a band gap and leads to an unexpected yet robust ferroelectricity with ordering of electric dipoles perpendicular to its plane. Central to the properties of this thinnest known ferroelectric is a strong coupling of conducting states with valley phonons that induce an effective electric field. The current in a semiconducting 1T MoS2 channel can, thus, be controlled independently by changing its ferroelectric dipolar structure with a gate field, opening up a possibility of a class of nanoscale dipolectronic devices. Our analysis applies equally well to MoSe2, WS2, and WSe2, giving tunability in design of such devices based on two dimensional chalcogenides.
author_names: Sharmila N Shirodkar

Umesh V Waghmare
title: Emergence of ferroelectricity at a metal semiconductor transition in a 1T monolayer of MoS2.
venue: Physical review letters
year: 2014

abstract: Ferroelectric semiconductors, combining semiconduction, spontaneous polarization, and photo induced excitation, show great promise to enhance the performance of solar cells, pressure sensors, and photodetectors. Particularly, organic inorganic lead halide perovskite ferroelectrics have been explored for their prominent carrier transport properties and instinct structural tunability. Whereas, high concentration of toxic Pb is the potential stumbling block for their further application. Here, we present a lead free hybrid perovskite semiconductor, (C4H9NH3)2(NH3CH3)2Sn3Br10 (1) which exhibits a large spontaneous polarization of 11.76 mC cm 2 at room temperature. Significantly, 1 presents a spontaneous polar ordering transition as the better known perovskite ferroelectrics and exhibits ferroelectric phase transition behaviors. To our best known, 1 is the first example of Sn based hybrid perovskite semiconductor featuring ferroelec tric performances. Machanism studies reveal that such ferroelectricity can be attributable to the synergistic effects of ordering of organic cations and stereochemically active lone pair electrons induced distortion of inorganic octahe dra. This work provides an effective way to explore "green" ferroelectric semiconductors with potentially enhanced energy conversion efficiency.
author_names: Lina Li

Xitao Liu

Chao He

Sasa Wang

Chengmin Ji

Xinyuan Zhang

Zhihua Sun

Sangen Zhao

Maochun Hong

Junhua Luo
title: A Potential Sn Based Hybrid Perovskite Ferroelectric Semiconductor.
venue: Journal of the American Chemical Society
year: 2020

abstract: Abstract Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p Si/V doped ferroelectric ZnO 2D nanosheets (FESZ PD) is fabricated, and the ferroelectricity enhanced piezo phototronic effect on the photoresponse behavior of the FESZ PD is carefully investigated. By introducing the ferroelectricity and the piezo phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain free conditions, the photoresponsivity R of the FESZ PD increases by 2.4 times when applying a 0.20%0 compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high performance electronic and optoelectronic devices.
author_names: Yejing Dai

Changsheng Wu

Zhiyi Wu

Zhihao Zhao

Li De Li

Yang Lu

Zhong Lin Wang
title: Ferroelectricity Enhanced Piezo Phototronic Effect in 2D V Doped ZnO Nanosheets
venue: Advanced science
year: 2019

abstract: The various structures of ferroelectric tunnel junctions (FTJs) are widely studied. Among them, metal ferroelectric semiconductor (MFS) FTJs show great tunneling electroresistance (TER) ratio by forming a depletion region. However, the poor ferroelectricity of hafnia on semiconductor electrodes degrades the TER ratio. This study employed high pressure annealing with forming gas to improve the ferroelectric properties of MFS FTJs. We achieved a high 2P<sub>r</sub> value <inline formula> <tex math notation="LaTeX"$47.54~\mu \text{c} /tex math>/inline formula>/cm<inline formula> <tex math notation="LaTeX"{2} /tex math>/inline formula> and large TER ratio (22) in MFS FTJ for a 6 nm thick hafnia layer annealed at high pressure (200 atm) with forming gas. This work helps improve the quality of interface between a semiconductor and ferroelectric layer to increase the ferroelectricity of MFS stack devices.
author_names: Junghyeon Hwang

Youngin Goh

Sanghun Jeon
title: Effect of Forming Gas High Pressure Annealing on Metal Ferroelectric Semiconductor Hafnia Ferroelectric Tunnel Junction
venue: IEEE Electron Device Letters
year: 2020