Query: tunneling field transistor

Candidate papers:

abstract: With the development of semiconductor technology, the size of traditional metal oxide semiconductor field effect transistor devices continues to decrease, but it cannot meet the requirements of high performance and low power consumption. Low power tunneling field effect transistor (TFET) has gradually become the focus of researchers. This paper proposes a novel T shaped gate TFET based on the silicon with the negative capacitance (NC TGTFET) On the basis of TGTFET, ferroelectric material (HZO) is used as gate dielectric. The simulation results show that, compared with the traditional TGTFET, the opening order and sensitivity of the two tunneling junctions are different. The influences of thickness and the doping concentration of pocket and ferroelectric material properties on the characteristics of NC TGTFET is also discussed by Sentaurus simulation tool. Furthermore, the negative capacitance of ferroelectric material makes NC TGTFET have a very steep subthreshold swing (18.32 mV/dec) at the range of drain current from 1 x 10 15 to 1 x 10 7 A mm 1. And the on state current (V g 0.5 V, V d 0.5 V) is 1.52 x 10 6 A mm 1.
author_names: Qingrui Jia

Yumei Pan

Yue Yin

Yupan Wu

Yucheng Wang

Yi Wen

Shaoxi Wang
title: A T shaped gate tunneling field effect transistor with negative capacitance, super steep subthreshold swing
venue: Nanotechnology
year: 2021

abstract: It has been experimentally shown that metallic zigzag graphene nanoribbon (ZGNR) can be obtained by unzipping a carbon nanotube (CNT) along the chiral direction of CNT. This makes it possible to fabricate a unique AGNR ZGNR CNT heterojunction so that the semi metallic ZGNR is between semiconducting AGNR and CNT. Here we demonstrate that such a unique all carbon heterojunction may be utilized to obtain a barrier free tunneling field effect transistor (TFET) By performing a self consistent first principle calculation based on density functional theory combined with none equilibrium Green's function (DFT NEGF) we show that such a barrier free TFET may reduce subthreshold swing below the classical limit while increase on state current by diminishing tunneling barrier, which provides an promising route toward ultralow power, highperformance carbon heterojunction electronics.
author_names: Yu Zhu

Wenli Zhou

Qingfeng Gong
title: Enhanced On state Current in Barrier free Carbon Heterojunction Tunneling Field effect Transistor
venue: 2021 5th IEEE Electron Devices Technology Manufacturing Conference (EDTM)
year: 2021

abstract: Abstract Tunneling field effect transistors (TFETs) have emerged as a potential candidate to outperform conventional metal oxide semiconductor FETs at low voltages, since their operation mechanism can overcome the fundamental subthreshold swing (SS) limit of 60 mV/decade at room temperature. We report carbon nanotube (CNT) based TFETs with abrupt p i n tunneling junctions controlled by electrostatic doping. Minimum SS (SSmin) of ~41 mV/dec is observed with nearly no temperature dependence, as clear evidence of the TFET operation. We further investigate devices using CNTs with smaller bandgaps, reporting a record high band to band tunneling (BTBT) current of ~100 nA for a single CNT. Non linear output characteristics are observed as expected for devices operating outside of the quantum capacitance limit (QCL) Overall, electrostatically doped CNT TFETs shine a promising path for low power electronic applications.
author_names: Chin-Sheng Pang

Shu-Jen Han

Zhihong Chen
title: Steep slope carbon nanotube tunneling field effect transistor
year: 2021

abstract: In this work, a new simulation approach of transient analysis on single cavity dielectric modulated (DM) <inline formula> <tex math notation="LaTeX"{p} /tex math>/inline formula> type of tunnel field effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity <inline formula> <tex math notation="LaTeX"{S} /tex math>/inline formula> and selectivity <inline formula> <tex math notation="LaTeX"\Delta {S} /tex math>/inline formula> Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 10<sup>8</sup> for APTES biomolecule with respect to air and a significant selectivity value in orders of 10<sup>3</sup> for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved ~10<sup>4</sup> by optimizing the back gate bias, and therefore, the impact of back gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated highlighted. The DM <inline formula> <tex math notation="LaTeX"{p} /tex math>/inline formula> TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of 2.0 V, drain voltage of 0.5 V and back gate voltage 0 to 0.5 V)
author_names: Praveen Dwivedi

Rohit Singh

Brajendra Singh Sengar

Amitesh Kumar

Vivek Garg
title: A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor Based Biosensor
venue: IEEE Sensors Journal
year: 2021

author_names: Mina Mazrouei

Daryoosh Dideban

Hamed Jooypa
title: Reducing Ambipolar Conduction in a Graphene Tunneling Field Effect Transistor (GTFET) via Bandgap Engineering
year: 2021

author_names: Guenifi Naima

Dr Shiromani Balmukund Rahi
title: Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System
year: 2021

author_names: Simhadri Hariprasad

Surya Shankar Dan

Ramakant Yadav

A Mishra
title: Double gate line tunneling field effect transistor devices for superior analog performance
venue: Int. J. Circuit Theory Appl.
year: 2021

abstract: GaXIn1 XAs/GaYIn1 YSb vertical heterojunctionless tunneling field effect transistor (VHJL TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL TFET with type II heterostructure (i.e. X=0.8, Y=0.85) slight changes in gate voltage cause switching from OFF state to ON state. As a result, the electrical properties of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL TFET are excellent in the sub threshold region. The heterostructure with III V semiconductors in the source channel region increases the ON state current (ION (of the VHJL TFET. Comparing the results of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL TFET with the simulated devices with type I heterostructure (i.e. X=0.9, Y=0.1) and type III heterostructure (i.e. X=0.1, Y=0.4) shows the improvement by 26% and 15% in the average subthreshold slope (SS) Sensitivity analysis for VHJL TFET with the type II heterostructure shows that the sensitivity of OFF state current (IOFF) to the body thickness (Tb) and doping concentration (ND) is more than the sensitivity of the other main electrical parameters. The Ga0.8In0.2As/Ga0.85In0.15Sb VHJL TFET with a channel length of 20 nm, Tb=5 nm, and ND=1x1018cm 3 showed the SS=4.4mV/dec, ION/IOFF=4E14, and ION=8mA/um. As a result, Ga0.8In0.2As/Ga0.85In0.15Sb VHJL TFET can be a reasonable choice for digital applications.
author_names: Behzad Rajabi

Mahdi Vadizadeh
title: Investigation of the impact of mole fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1 XAs/GaYIn1 YSb vertical heterojunctionless tunneling field effect transistor
year: 2021

abstract: Abstract Overcoming the performance limits encountered with the conventional nanoscale transistors while simplifying the fabrication process is an objective that can give a new impulses to the modern nanoelectronics. A novel band to band tunneling junctionless carbon nanotube field effect transistor, endowed with a lightly doped pocket underneath the coaxial gate, is computationally proposed herein. The quantum simulation based on the non equilibrium Green's function formalism is used in the investigation while considering the self consistent electrostatics and ballistic transport conditions. The proposed nanodevice switches via the modulation of band to band tunneling in the absence of thermionic emission mechanism. The pocket induced barrier is employed to mitigate the ambiploar behavior attributed to the thermionic current and to improve the nanodevice performance. The simulations show that the proposed device exhibits improved leakage current, ambipolar behavior, subthermionic subthreshold swing, and current ratio in comparison to those provided by its conventional counterpart uniformly doped. In addition, the role of the pocket length in boosting the performance of the proposed band to band tunneling device is investigated, where the optimal length of lightly doped pocket is revealed. Note that the obtained enhancements have been thoroughly analyzed using the energy position resolved charge density and current spectrum. The recorded improvements, namely subthermionic subthreshold swing and high ION/IOFF current ratio, together with the merits of junctionless paradigm, make the proposed pocket based technique, as an intriguing strategy that can be used to boost the performance of similar nanoscale band to band tunneling junctionless field effect transistors for high performance and low power applications.
author_names: Khalil Tamersit
title: A novel band to band tunneling junctionless carbon nanotube field effect transistor with lightly doped pocket: Proposal, assessment, and quantum transport analysis
year: 2021

abstract: Abstract In here, a new structure based on doping less tunneling CNTFET is introduced. The CNT semiconductor is intrinsic throughout and selected for the source and drain regions of metals with appropriate work functions. The whole process of importing doping is eliminated, and the source and drain regions are created only by applying two metals with different work functions. The drain metal work function is 1 eV lower and those of source, is 1 eV higher than the CNT work function. The simulation is performed in the ballistic regime by solving the Poisson and Schrodinger equations in a self consistent way using the non equilibrium Green's function method. The results show that the proposed structure widens the barrier on the drain channel connection and consequently improves the band to band tunneling and the ambipolar behavior of the device. Also, the proposed structure reduces the OFF state current, increases the current ratio and decreases the subthreshold swing.
author_names: Maryam Ghodrati

Ali Mir

Ali Naderi
title: Proposal of a doping less tunneling carbon nanotube field effect transistor
year: 2021