Query: Organic Semiconductor Field-Effect Transistors Based on Organic-2D Heterostructures

Candidate papers:

abstract: In the past three decades, organic semiconductor field effect transistors (OFETs) have drawn intense attention as promising candidates for drive circuits of flat panel display, radio frequency identifications, chemical/bio sensors, and other devices. Generally, the key parameters of OFETs, carrier mobility, threshold voltage, and on/off current ratio are closely related to the degree of order and surface/interface electronic structure of organic semiconductor (OSC) films. The ordering of films is crucially determined by the molecule substrate interactions. On inert substrates (such as SiO2) OSC films can hardly reach a high degree of ordering without growth templates, while traditional single crystal surfaces usually force the OSC molecules to deviate from their favorite assemble manner resulting in an unstable structure. Recently, the rise of two dimensional materials (2D) provides a possible solution. The in plane lattice of 2D materials can offer possible epitaxy templates for OSCs while the weak van der Waals (vdWs) interaction between OSC and 2D layers allows for more flexibility to realize the epitaxy growth of OSCs with their favored assemble manner. In addition, the various band structures tuned by the layer numbers of 2D materials encourage widely modified OSC electronic structures by interface doping between the OSC and 2D layers, which benefits the structure by obtaining high performance OFETs. In this review, we emphasize and discuss the recent advances of OSC 2D hybrid OFETs. The OSC 2D heterostructures not only promote OFET device performances by film morphology/structure optimization and channel electronic structure modification, but also offer platforms for basic organic solids physics investigation and further functional optoelectronic devices.
author_names: Zi Wang

Lizhen Huang

Lifeng Chi
title: Organic Semiconductor Field Effect Transistors Based on Organic 2D Heterostructures
venue: Frontiers in Materials
year: 2020

abstract: Novel device architectures based on heterostructures of graphene with semiconductor layers have recently attracted considerable interest due to their potential in a wide range of electronic and photonic applications. The key concept in these devices is to exploit the work function tunability of graphene via external gate field to modulate the current flow across the graphene semiconductor junction by adjusting the Schottky barrier height. Transistor devices based on a vertical heterojunction of graphene with inorganic semiconductors (n and p type Silicon) [1] oxide semiconductor (n type indium gallium zinc oxide) [2,3] and flakes of 2D layered materials (molybdenum disulfide, tungsten disulfide) [4 7] have been successfully fabricated with a high on/off ratio, overcoming the limitation of planar graphene field effect devices. We demonstrate, for the first time, low voltage complementary p and n channel vertical organic thin film transistors (VOTFTs) based on the graphene organic semiconductor heterojunctions with simple, scalable and low temperature fabrication process. VOTFT device with thin layer of prototypical n type organic semiconductor C60 exhibits high on current densities in the range of 10 mA/cm2 with the driving voltage of only 1 V suppressing the output current of traditional planar organic field effect transistors. It can also operate at the bias as low as 200 mV with high on/off ratio ~103) For low power logic application, complementary VOTFT devices with prototypical p type organic semiconductors (CuPc, Pentacene, a 6T, Rubrene) are also investigated.
author_names: Htay Htay Hlaing

F Carta

Robert A Barton

Chang-Yong Nam

Nicholas Petrone

James C Hone

Ioannis Kymissis
title: Low power organic electronics based on gate tunable injection barrier in vertical graphene organic semiconductor heterostructures
venue: 72nd Device Research Conference
year: 2014

abstract: 2D transition metal dichalcogenides are promising channel materials for the next generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS2 few layers and organic crystal 5,6,11,12 tetraphenylnaphthacene (rubrene) In this work, ambipolar field effect transistors are successfully achieved based on MoS2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm2 V 1 s 1 respectively. The ambipolar behavior is explained based on the band alignment of MoS2 and rubrene. Furthermore, being a building block, the MoS2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of 26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.
author_names: Xuexia He

Wai Leong Chow

Fucai Liu

Bengkang Tay

Zheng Liu
title: MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field Effect Transistors and Inverter Circuits.
venue: Small
year: 2017

abstract: La presente tesis doctoral se centra en la fabricacion, optimizacion, caracterizacion y aplicacion de capas activas compuestas de una mezcla de semiconductor organico y un polimero aislante (OSC:PS) en transistores organicos de efecto de campo (EGOFET) con puerta electrolitica. El EGOFET esta considerado como una prometedora plataforma de deteccion en el campo de la bioelectronica debido a su capacidad de operar en medios electroliticos. Hasta la fecha, aunque en varios proyectos de investigacion se ha demostrado su alto potencial como plataforma de deteccion, existe algunos problemas que deben resolverse, tales como su baja movilidad del portador de carga, lentos tiempo de respuesta y una degradacion rapida que dificultan su aplicacion practica. En este contexto, la tesis se divide en tres bloques, que van desde la fabricacion de los dispositivos hasta sus aplicaciones. La primera parte de la tesis tiene como objetivo la fabricacion de dispositivo robustos y eficientes empleando dos estrategias: (i) la optimizacion de la mezclas de polimero aislante y semiconductor organico (OSC) y (ii) el uso de una tecnica basada en la deposicion de capas activas mediante disolucion que recibe el nombre de BAMS (bar assistance meniscus shearing) En la primera parte de la tesis (Capitulo 2) se emplearon cuatro semiconductores organicos diferentes en que se incluyen tres pequenas moleculas y un polimero semiconductor como materiales activos. Los dispositivos se han caracterizado mediante medida electricas (caracteristicas de transferencia y salida) y su analisis y compresion, la sensibilidad potenciometrica, velocidad de conmutacion (tiempo de respuesta) y estabilidad electrica en agua MilliQ y soluciones salinas (NaCl) Ademas, la segunda parte de la tesis (Capitulo 3) esta dedicada al desarrollo de un sensor de iones de mercurio basado la exposicion de los capas activas a disoluciones acuosa que contienen iones de mercurio. En este caso, se observo un cambio gradual en el potencial umbral, que era respuesta directa de la concentracion de iones a la qual se exponia la capa activa. Ademas, se realizaron pruebas de microscopia de fuerza de atomica "Kelvin prove" y espectroscopia electroquimica de impedancia con el objetivo de entender el mecanismo de respuesta frente al mercurio. El cual se relaciono con la oxidacion/reduccion de los iones Hg2+ y la superficie del semiconductor. Finalmente, la tercera parte de la tesis (Capitulo 4) se centra en la fabricacion de nuevos dispositivo sustituyendo el electrolito por un hidrogel (HYGOFET) Logrando dispositivo de alto rendimiento empleando un hidrogel a base de agua como dielectrico. Ademas, el HYGOFET muestra una excelente respuesta a los variacion de presion debida a la alineacion de los dipolos del agua dentro de la capa de semiconductor. Por lo tanto, el dispositivo se puede visualizar como un prototipo de sensor de presion adaptable a ropa inteligente.
author_names: Qiaoming Zhang
title: Electrolyte gated organic field effect transistors based on organic semiconductor insulating polymer blends
year: 2019

abstract: Abstract Solution processed 2D organic semiconductors (OSCs) have drawn considerable attention because of their novel applications from flexible optoelectronics to biosensors. However, obtaining well oriented sheets of 2D organic materials with low defect density still poses a challenge. Here, a highly crystallized 2,9 didecyldinaphtho[2,3 b:2',3' f]thieno[3,2 b]thiophene (C10 DNTT) monolayer crystal with large area uniformity is obtained by an ultraslow shearing (USS) method and its growth pattern shows a kinetic Wulff's construction supported by theoretical calculations of surface energies. The resulting seamless and highly crystalline monolayers are then used as templates for thermally depositing another C10 DNTT ultrathin top up film. The organic thin films deposited by this hybrid approach show an interesting coherence structure with a copied molecular orientation of the templating crystal. The organic field effect transistors developed by these hybrid C10 DNTT films exhibit improved carrier mobility of 14.7 cm2 V 1 s 1 as compared with 7.3 cm2 V 1 s 1 achieved by pure thermal evaporation (100% improvement) and 2.8 cm2 V 1 s 1 achieved by solution sheared monolayer C10 DNTT. This work establishes a simple yet effective approach for fabricating high performance and low cost electronics on a large scale.
author_names: Zhiwen Zhou

Qisheng Wu

Sijia Wang

Yu-ting Huang

Hua Guo

Shien-Ping Feng

Paddy Kwok Leung Chan
title: Field Effect Transistors Based on 2D Organic Semiconductors Developed by a Hybrid Deposition Method
venue: Advanced science
year: 2019

abstract: Nonvolatile organic field effect transistor (OFET) memory devices based on pentacene/N,N' ditridecylperylene 3,4,9,10 tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n type P13 embedded in p type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge trapping property of the poly(4 vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.
author_names: Wen Zhi Li

Fengning Guo

Haifeng Ling

Peng Zhang

Ming-dong Yi

Laiyuan Wang

Dequn Wu

Linghai Xie

Wei Huang
title: High Performance Nonvolatile Organic Field Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers
venue: Advanced science
year: 2017

abstract: Mingdong Yi, Linghai Xie, Wei Huang and co workers describe an organic field effect transistor memory device based on trilayer organic heterostructures in article number 1700007. The device exhibits excellent performance for nonvolatile memory applications. In addition, the heterostructures are successfully applied on multilevel and flexible nonvolatile memory devices.
author_names: Wen Zhi Li

Fengning Guo

Haifeng Ling

Peng Zhang

Ming-dong Yi

Laiyuan Wang

Dequn Wu

Linghai Xie

Wei Huang
title: Semiconductors: High Performance Nonvolatile Organic Field Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017)
venue: Advanced Science
year: 2017

abstract: High structural quality of crystalline organic semiconductors is the basis of their superior electrical performance. Recent progress in quasi two dimensional (2D) organic semiconductor films challenges bulk single crystals because both demonstrate competing charge carrier mobilities. As the thinnest molecular semiconductors, monolayers offer numerous advantages such as unmatched flexibility and light transparency as well they are an excellent platform for sensing. Oligothiophene based materials are among the most promising ones for light emitting applications because of the combination of efficient luminescence and decent charge carrier mobility. Here, we demonstrate single crystal monolayers of unprecedented structural order grown from four alkyl substituted thiophene and thiophene phenylene oligomers. The monolayer crystals with lateral dimensions up to 3 mm were grown from the solution on substrates with various surface energies and roughness by drop or spin casting with subsequent slow solvent evaporation. Our data indicate that 2D crystallization resulting in single crystal monolayers occurs at the receding gas solution substrate contact line. The structural properties of the monolayers were studied by grazing incidence X ray diffraction/reflectivity, atomic force and differential interference contrast microscopies, and imaging spectroscopic ellipsometry. These highly ordered monolayers demonstrated an excellent performance in organic field effect transistors approaching the best values reported for the thiophene or thiophene phenylene oligomers. Our findings pave the way for efficient monolayer organic electronics highlighting the high potential of simple solution processing techniques for the growth of large size single crystal monolayers with excellent structural order and electrical performance competing against bulk single crystals.
author_names: Vladimir V Bruevich

Anastasia V Glushkova

Olena Yu Poimanova

Roman S Fedorenko

Yuriy N Luponosov

Artem V Bakirov

Maxim A Shcherbina

Sergei N Chvalun

Andrey Yu Sosorev

Linda Grodd

Souren Grigorian

Sergei A Ponomarenko

Dmitry Yu Paraschuk
title: Large Size Single Crystal Oligothiophene Based Monolayers for Field Effect Transistors.
venue: ACS applied materials interfaces
year: 2019

abstract: Owing to enhanced charge transport efficiency arising from the ultrathin nature, two dimensional (2D) organic semiconductor single crystals (OSSCs) are emerging as a fascinating platform for high performance organic field effect transistors (OFETs) However, "coffee ring" effect induced by an evaporation induced convective flow near the contact line hinders the large area growth of 2D OSSCs through a solution process. Here, we develop a new strategy of suppressing the "coffee ring" effect by using an organic semiconductor: polymer blend solution. With the high viscosity polymer in the organic solution, the evaporation induced flow is remarkably weakened, ensuring the uniform molecule spreading for the 2D growth of the OSSCs. As an example, wafer scale growth of crystalline film consisting of few layered 2,7 didecylbenzothienobenzothiophene (C 10 BTBT) crystals was successfully accomplished via blade coating. OFETs based on the crystalline film exhibited a maximum hole mobility up to 12.6 cm 2 *V 1 *s 1 along with an average hole mobility as high as 8.2 cm 2 *V 1 *s 1 Our work provides a promising strategy for the large area growth of 2D OSSCs toward high performance organic electronics.
author_names: Xiujuan Zhang

Jiansheng Jie

Xiaohong Zhang
title: Controlled 2D growth of organic semiconductor crystals by suppressing "coffee ring" effect
venue: Nano Research
year: 2020

title: Weavable, Fibrous Organic Field Effect Transistors Based on Metal Insulator Semiconductor Coaxial Microfibers using Phase Separation of Organic Semiconductor
year: 2016