Query: Extraordinary mobility in semiconducting carbon nanotubes,

Candidate papers:

abstract: Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the channel resistance dominates the transport. Transport characteristics are used to extract the field effect mobility (79 000 cm2/Vs) and estimate the intrinsic mobility >100 000 cm2/Vs) at room temperature. These values exceed those for all known semiconductors, which bodes well for application of nanotubes in high speed transistors, single and few electron memories, and chemical/biochemical sensors.
author_names: T Durkop

S Getty

Enrique Cobas

Michael S Fuhrer
title: Extraordinary Mobility in Semiconducting Carbon Nanotubes
year: 2004

abstract: Summary In the past decade, single walled carbon nanotubes (SWNTs) have aroused great interest for electronic applications due to their extraordinary charge carrier mobility, mechanical flexibility, and solution processability. However, one of the key issues preventing the wide application of SWNTs in electronics is the need to separate semiconducting SWNTs from metallic SWNTs. Sorting semiconducting SWNTs using conjugated polymers is becoming a very promising SWNT sorting method due to its high selectivity, high yield and simplicity of execution. In this review, we summarized the parameters that can be used to tune the selectivity and sorting yield of semiconducting SWNTs, including polymer structure, solvent, polymer to SWNT ratio, sonication temperature and polymer molecular weight. We also reviewed the electronic applications enabled by these polymer sorted semiconducting SWNTs inks such as transistors, logic gates, photodetectors, solar cells and 3D electronics.
author_names: Huiliang Wang

Zhenan Bao
title: Conjugated polymer sorting of semiconducting carbon nanotubes and their electronic applications
year: 2015

abstract: Single walled carbon nanotubes (SWCNTs) are a class of 1D nanomaterials that exhibit extraordinary electrical and optical properties. However, many of their fundamental studies and practical applications are stymied by sample polydispersity. SWCNTs are synthesized in bulk with broad structural (chirality) and geometrical (length and diameter) distributions; problematically, all known post synthetic sorting methods rely on ultrasonication, which cuts SWCNTs into short segments (typically <1 um) It is demonstrated that ultralong >10 um) SWCNTs can be efficiently separated from shorter ones through a solution phase "self sorting" It is shown that thin film transistors fabricated from long semiconducting SWCNTs exhibit a carrier mobility as high as 90 cm2 V 1 s 1 which is 10 times higher than those which use shorter counterparts and well exceeds other known materials such as organic semiconducting polymers <1 cm2 V 1 s 1 amorphous silicon (1 cm2 V 1 s 1 and nanocrystalline silicon (50 cm2 V 1 s 1 Mechanistic studies suggest that this self sorting is driven by the length dependent solution phase behavior of rigid rods. This length sorting technique shows a path to attain long sought ultralong, electronically pure carbon nanotube materials through scalable solution processing.
author_names: Peng Wang

Benjamin Kerr Barnes

Xiao-jiang Wu

Haoran Qu

Chiyu Zhang

Yang Shi

Robert J Headrick

Matteo Pasquali

YuHuang Wang
title: Self Sorting of 10 um Long Single Walled Carbon Nanotubes in Aqueous Solution.
venue: Advanced materials
year: 2019

abstract: Benefiting from their extraordinary physical properties, methylammonium lead halide perovskites (PVKs) have attracted significant attention in optoelectronics. However, the PVK based devices suffer from low carrier mobility and high operation voltage. Here, we utilize sorted semiconducting single walled carbon nanotubes (95% s SWCNT) to enhance the performance of thin film transistors (TFTs) based on the mixed cation perovskite (MA1 xFAx)Pb(I1 xBrx)3, enabling mixed dimensional solution processed electronics with high mobility (32.25 cm2/Vs) and low voltage ~3 V) operation. The resulting mixed dimensional PVK/SWCNT TFTs possess ON/OFF ratios on the order of 107, enabling the fabrication of high gain inverters.
author_names: Chun Ma

Sarah Clark

Zhixiong Liu

Liangliang Liang

Yuliar Firdaus

Ran Tao

Ali Han

Xiaogang Liu

Lain-Jong Li

Thomas D Anthopoulos

Mark C Hersam

Tom Wu
title: Solution Processed Mixed Dimensional Hybrid Perovskite/Carbon Nanotube Electronics.
venue: ACS nano
year: 2020

abstract: Due to extraordinary electrical properties, preseparated, high purity semiconducting carbon nanotubes hold great potential for thin film transistors (TFTs) and integrated circuit applications. One of the main challenges it still faces is the fabrication of air stable n type nanotube TFTs with industry compatible techniques. Here in this paper, we report a novel and highly reliable method of converting the as made p type TFTs using preseparated semiconducting nanotubes into air stable n type transistors by adding a high k oxide passivation layer using atomic layer deposition (ALD) The n type devices exhibit symmetric electrical performance compared with the p type devices in terms of on current, on/off ratio, and device mobility. Various factors affecting the conversion process, including ALD temperature, metal contact material, and channel length, have also been systematically studied by a series of designed experiments. A complementary metal oxide semiconductor (CMOS) inverter with rail to rail output, symmetric input/output behavior, and large noise margin has been further demonstrated. The excellent performance gives us the feasibility of cascading multiple stages of logic blocks and larger scale integration. Our approach can serve as the critical foundation for future nanotube based thin film macroelectronics.
author_names: Jialu Zhang

Chuan Wang

Yuelong Fu

Yuchi Che

Chongwu Zhou
title: Air stable conversion of separated carbon nanotube thin film transistors from p type to n type using atomic layer deposition of high k oxide and its application in CMOS logic circuits.
venue: ACS nano
year: 2011

abstract: Enhanced carrier carrier interactions in hybrid nanostructures exhibit exceptional electronic and optoelectronic properties. Carbon nanotubes demonstrate excellent switching behavior with high on/off ratio and high mobility but do not show photoresponse in the visible range, whereas quantum dots (QDs) shows excellent optical response in various optical ranges which can be tuned with diameter. Here, a simple and effective way to develop hybrid phototransistors with extraordinary optoelectronic properties is presented by decorating semiconducting QDs on the surface of a single walled carbon nanotube (SWCNT) This hybrid structure demonstrates clear negative photoresponse and optical switching behavior, which could be further tuned by applying external gate bias in the future. A clear type conversion of SWCNT transistor from p type to n type caused by a charge transfer from attached QDs to CNT is demonstrated. Moreover, this hybrid structure also demonstrates an enhancement in 'optical Stark effect' without applying any external electric field. Charged SWCNT surface plays a key role behind the enhancement of optical Stark effect in QDs. The carrier dynamics of the QD and CNT heterostructures system highlights the potential application opportunity of the quantum dot systems, which can be adaptable to the current technologies.
author_names: Chandan Biswas

Hyun Jeong

Mun Seok Jeong

Woo Jong Yu

Didier Pribat

Young Hee Lee
title: Quantum Dot Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect
year: 2013

abstract: Flexible transistors with semiconducting carbon nanotubes offer better mobility and stability than current organic material transistors for applications in flexible display and sensor devices. With carbon nanotubes as the semiconducting material, the transistors offer a higher performance due to the extraordinary electrical properties of singlewalled carbon nanotubes (SWNTs) However, conventional metal shadow masks can only create flexible device transistors with a channel length of 50 mm or greater. Parylene C shadow masks can be used instead of metal masks because of their flexibility, adaptability for patterning, and their ability to fabricate transistors with much smaller channel lengths. Previously it has been shown that Parylene C masks allow for a fine resolution with a smallest feature size of 4 mm. We fabricated masks with features as small as 2 mm wide, and additionally used our masks to create short channel transistors. We successfully constructed short channel top contact SWNT network inflexible and flexible transistors on silicon (Si) and polyamide substrates with a mobility of 0.1 to 2 cm2/V s and on/off ratios on the magnitude of 102 to 103.
author_names: Kelsey E Hirotsu
title: Fabricating Parylene C Shadow Masks for Applications in Short Channel Top Contact Carbon Nanotube Flexible Transistors
year: 2012

abstract: Conjugated polymers attracted much attention in the past few decades due to their wide applications in various optoelectronic devices and circuits. The charge transport process in conjugated polymers mainly occurs in the intrachain and interchain parts, where the interchain charge transport is generally slower than intrachain transport and may slow down the whole charge transport properties. Aiming at this issue, herein we employ semiconducting single walled carbon nanotubes (s SWNTs) as efficient charge transporting jointing channels between conjugated polymer chains for improving the charge transport performance. Taking the typical conjugated polymer, ploy N alkyl diketopyrrolopyrrole dithienylthieno[3,2 b]thiophene (PDPP TT) as an example, polymer thin film transistors (PTFTs) based on the optimized blended films of PDPP TT/s SWNTs exhibit an obviously increasing device performance compared with the devices based on pure PDPP TT films, with the hole and electron mobility increased from 2.32 to 12.32 cm2 V 1 s 1 and from 2.02 to 5.77 cm2 V 1 s 1, respectively. This result suggests the importance of forming continuous conducting channels in conjugated polymer thin films, which can also be extended to other polymeric electronic and optoelectronic devices to promote their potential applications in large area, low cost and high performance polymeric electronic devices and circuits.Zhai Yao Zai Guo Qu De Ji Shi Nian Zhong Gong E Ju He Wu Yin Qi Zai Guang Dian Qi Jian Zhong De Yan Fan Ying Yong Shou Dao Yan Fan Guan Zhu Gong E Ju He Wu Zhong De Dian He Chuan Shu Guo Cheng Zhu Yao You Lian Nei He Lian Jian Liang Bu Fen Zu Cheng Qi Zhong Lian Jian Dian He Chuan Shu Tong Chang Di Yu Lian Nei Chuan Shu Bing Qie Ke Neng Jiang Di Zheng Ge Dian He Shu Yun Xing Zhi Zhen Dui Gai Wen Ti Ben Wen Ti Chu Liao Jiang Ban Dao Ti Dan Bi Tan Na Mi Guan (s SWNTs)Zuo Wei Gong E Ju He Wu Lian Jian De You Xiao Dian He Chuan Shu Tong Dao Yi Gai Shan Dian He Chuan Shu Xing Neng De Gai Nian Shi Yong Dian Xing De Gong E Ju He Wu PDPP TTZuo Wei Shi Li Jiang You Hua De PDPP TT/s SWNTsYu Chun PDPP TTBo Mo De Qi Jian Xiang Bi Qi Jian Xing Neng Ming Xian Ti Gao Kong Xue Qian Yi Lu Cong 2.32Zeng Jia Dao 12.32 cm2 V 1 s 1, Er Dian Zi Qian Yi Lu Cong 2.02Zeng Jia Dao 5.77 cm2 V 1 s 1. Gai Jie Guo Biao Ming Zai Gong E Ju He Wu Bo Mo Zhong Xing Cheng Lian Xu Dao Dian Tong Dao De Zhong Yao Xing Ci Gai Nian Ye Ke Yi Kuo Zhan Dao Qi Ta Ju He Wu Qi Jian Zhong Yi Tui Jin Qi Zai Da Mian Ji Di Cheng Ben Gao Xing Neng Ju He Wu Dian Zi Qi Jian He Dian Lu Zhong De Ying Yong
author_names: Zhe Zheng

Zhenjie Ni

Xiaotao Zhang

Yonggang Zhen

Huanli Dong

Jin Zhang

Wenping Hu
title: Carbon nanotubes assisting interchain charge transport in semiconducting polymer thin films towards much improved charge carrier mobility
venue: Science China Materials
year: 2019

abstract: We present new data and a compact mobility model for semiconducting single wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm2/Vmiddots at high carrier density (n 0.5 nm 1) for typical single wall nanotube diameters, due to the strong scattering effect of the second subband.
author_names: Yangzhou Zhao

Albert D Liao

Eric Pop
title: Multiband Mobility in Semiconducting Carbon Nanotubes
venue: IEEE Electron Device Letters
year: 2009

abstract: Carbon nanotube field effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperatures. The low field mobility is a nonmonotonic function of carrier density and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the non parabolicity of the band structure. At a critical density, rho(c) approximately 0.35 0.5 electrons/nm, the drift velocity saturates at around one third of the Fermi velocity. Above rho(c) the velocity increases with field strength with no apparent saturation.
author_names: Vasili Perebeinos

Jerry Tersoff

Phaedon Avouris
title: Mobility in semiconducting carbon nanotubes at finite carrier density.
venue: Nano letters
year: 2006