Query: Numerical simulation of submicron semiconductor  device

Candidate papers:

abstract: Semiconductor fundamentals carrier scattering Monte Carlo transport calculation Monte Carlo device simulation balance equation method for device simulation.
author_names: Fu Ze Yi Long
title: Numerical simulation of submicron semiconductor devices
year: 1993

abstract: The hydrodynamic model treats electron flow in a semiconductor device through the Euler equations of gas dynamics, with the addition of a heat conduction term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes. The nonlinear hyperbolic modes support shock waves. Numerical simulations of a steady state electron shock wave in a submicron semiconductor device are presented, using a steady state second upwind upwind method. For the n n n diode (which models the channel of a MOSFET) the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.
author_names: Carl L Gardner
title: Upwind Simulation of a Steady State Electron Shock Wave in a Submicron Semiconductor Device
year: 2014

abstract: In this paper, we apply our proposed early parallel adaptive computing methodology for numerical solution of semiconductor device equations with triangular meshing technique. This novel simulation based on adaptive triangular mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is developed and successfully implemented on a Linux cluster with message passing interface (MPI) library. Parallel adaptive computing with triangular mesh has its flexibility to simulate multidimensional semiconductor devices with highly complicated geometry. Our approach fully exploits the inherent parallelism of the triangular mesh finite volume as well as monotone iterative methods for semiconductor drift diffusion equations on a Linux cluster parallel computing system. Parallel simulation results demonstrate an excellent speedup with respect to the number of processors. Benchmarks and numerical results for a submicron N MOSFET device are also presented to show the robustness and efficiency of the method. Key Words: Monotone Iterative Method, Finite Volume Method, Adaptive Refinement, Triangular Mesh, Cluster Computing, Drift Diffusion Equations, MOSFET
author_names: Yiming Li

Cheng-Kai Chen

Pu Chen
title: Monotone iterative method and adaptive finite volume method for parallel numerical simulation of submicron MOSFET devices
year: 2001

abstract: Bearing in mind the requirements of design engineers, a nonlinear model is developed to simulate the temperature dependent I V characteristics of submicron high electron mobility transistors (HEMTs) Self and ambient heating effects are incorporated into the model expression to cater for both the negative and positive conductance of the device, after the onset of the saturation current. It is shown that the accuracy of numerical models previously developed for metal semiconductor field effect transistors (MESFETs) deteriorates when simulating the I V characteristics of gallium nitride (GaN) HEMTs, primarily due to the self heating effects. The validity of the proposed model is checked for GaN HEMTs with gate length $L_\mathrm{g}$Lg) ranging from 0.12 to 0.7 \upmu \hbox {m}$mm in the temperature range of $T=298$$T=298 to $T=773$$T=773 K. It is demonstrated that the proposed model simulates, with a good degree of accuracy, the output characteristics of such devices exhibiting negative conductance in the saturation region of operation. It is observed that, for devices exhibiting negative conductance in the saturation region, the peak transconductance $g_\mathrm{m}$gm) occurs at a relatively higher negative gate bias while the peak value reduces with increasing ambient temperature. The root mean square errors reveal that the proposed model is better than other similar models reported in the literature, with an improvement varying from 17 to 50 depending on the device characteristics.
author_names: M N Khan

Umer Farooq Ahmed

M Mansoor Ahmed

Saif-Ur Rehman
title: Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software
year: 2019

abstract: Abstract A new set of semiconductor equations is proposed here which will be suitable for the numerical study of the carrier transport effects in submicron devices. With simplified models and comprehensive numerical techniques, the relative importance (on the device behavior) of several physical effects, such as velocity overshoot, intracollisional field effect, avalanche breakdown, carrier generation and temperature effect can be determined. The program that is capable of solving this set of equations will become an indispensible CAD tool if the current trend of the decreasing of the device dimensions continues.
author_names: Cheng T Wang
title: A new set of semiconductor equations for computer simulation of submicron devices
year: 1985

abstract: A new approach, called monotone iterative (MI) method, for the numerical solution of semiconductor device equations is presented. This constructive method is intended to alleviate some major difficulties particularly associated with Newton's method that is the principal methodology to date for the solution of nonlinear semiconductor device equations. The method converges globally with arbitrary initial guess under various bias conditions for a submicron MOSFET. By comparing with a Newton's iterative (NI) method, a speed up factor of 30 in CPU time can be achieved by the MI method. The method is highly parallel and easy to implement for two and three dimensional simulations. Numerical simulations on a submicron N MOSFET device with various biasing conditions and initial guesses are presented to demonstrate the efficiency of the method.
author_names: Yiming Li

S Chung

Jinn-Liang Liu
title: A novel approach for the two dimensional simulation of submicron MOSFETs using monotone iterative method
venue: 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)
year: 1999

abstract: In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSFET electron temperature can be significantly controlled with lightly doped drain (LDD) structure. Global convergence behavior is also presented to show the robustness and efficiency of the method. Key Words: Carrier Temperature Calculation, Monotone Iterative Algorithm, LDD, MOSFET
author_names: Yiming LI National
title: A Novel Approach to Carrier Temperature Calculation for Semiconductor Device Simulation using Monotone Iterative Method Part II Numerical Results
year: 2001

abstract: In this paper, we solve numerically a semiconductor device energy balance equation using monotone iterative method. With the proposed solution technique, we prove the solution of nite volume discretized semiconductor device energy balance equation converges monotonically. The method presented here provides an e+ cient approach for the numerical solution of energy balance equation in submicron semiconductor device simulation.
author_names: Li Yiming
title: A Novel Approach to Carrier Temperature Calculation for Semiconductor Device Simulation using Monotone Iterative Method Part I Numerical Algorithm
year: 2001

abstract: An efficient numerical solution scheme based on a new generalized finite difference discretization and iterative strategies is developed for submicron semiconductor devices. As a representative model we consider a non parabolic hydrodynamic system. The discretization is formulated in a mapped reference domain, and incorporates a transformed Scharfetter Gummel treatment for the current density and energy flux. This permits the use of graded, nonuniform curvilinear grids in the physical domain of interest, which has advantages when gridding irregular domain shapes or solution profiles. The solution of the discrete system is carried out in a fully coupled, implicit form, and non symmetric gradient type iterative strategies are investigated. Numerical results demonstrating the performance and reliability of the scheme are presented for ID and 2D test problems.
author_names: Anand L Pardhanani

Graham F Carey
title: Simulation of Hydrodynamic Semiconductor Device Models Using a Modified Scharfetter Gummel Strategy
year: 2006

abstract: An efficient numerical solution scheme based on a new mapped finite difference discretization and iterative strategies is developed for submicron semiconductor devices. As a representative model we consider a nonparabolic hydrodynamic system. The discretization is formulated in a mapped reference domain, and incorporates a transformed Scharfetter Gummel treatment for the current density and energy flux. This permits the use of graded, nonuniform curvilinear grids in the physical domain of interest, which has advantages when gridding irregular domain shapes or grading meshes for steep solution profiles. The solution of the discrete system is carried out in a fully coupled, implicit form, and nonsymmetric gradient type iterative strategies are investigated. Numerical results demonstrating the performance and reliability of the scheme are presented for test problems.
author_names: Anand L Pardhanani

Graham F Carey
title: A mapped Scharfetter Gummel formulation for the efficient simulation of semiconductor device models
venue: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
year: 1997