Query: the  transistor  PNP

Candidate papers:

abstract: 1. SEMICONDUCTORS, JUNCTIONS AND MOFSET OVERVIEW 2. THE TWO TERMINAL MOS STRUCTURE 3. THE THREE TERMINAL MOS STRUCTURE 4. THE FOUR TERMINAL MOS STRUCTURE 5. MOS TRANSISTORS WITH ION IMPLANTED CHANNELS 6. SMALL DIMENSION EFFECTS 7. THE MOS TRANSISTOR IN DYNAMIC OPERATION LARGE SIGNAL MODELING 8. SMALL SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES 9. HIGH FREQUENCY SMALL SIGNAL MODELS 10.MOFSET MODELING FOR CIRCUIT SIMULATION
author_names: Yannis P Tsividis
title: Operation and modeling of the MOS transistor
year: 1987

abstract: All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
author_names: J P Colinge

Chi-Woo Lee

Aryan Afzalian

Nima Dehdashti Akhavan

Ran Yan

Isabelle Ferain

Pedram Razavi

Brendan O'Neill

Alan Blake

Mary Anne White

A Kelleher

Brendan McCarthy

Richard Murphy
title: Nanowire transistors without junctions.
venue: Nature nanotechnology
year: 2010

abstract: The authors have demonstrated a functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower bandgap energy (E{sub g} 1.25eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction band offset, while the valence band offset remains comparable. This characteristic band alignment is very suitable for Pnp HBT applications. The device's peak current gain is 23 and it has a turn on voltage of 0.77V, which is 0.25V lower than in a comparable Pnp Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT.
author_names: Albert G Baca

Pablo Chang

Fan Ren
title: InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor
year: 1999

abstract: A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n type modulation doped quantum well layer next to a double barrier tunneling structure. Electrons are injected from the quantum well base layer into the tunneling structure, leading to quantum well light emission when they recombine with holes from the emitter. This optical output, which is modulated by the base voltage, persists in the negative differential resistance region of the current voltage characteristics where the hole current is in oscillation. This opens possibilities for using this transistor as a high frequency electro optical heterodyne convertor.
author_names: Jan Genoe

Chris Van Hoof

Kristel Fobelets

Robert P Mertens

G Borghs
title: pnp resonant tunneling light emitting transistor
year: 1992

abstract: This paper proposes a novel lateral PNP type structure that is fully compatible with existing single polysilicon BiCMOS processes and offers a valid alternative to shallow polysilicon emitter transistors. We have used both an analytical approach and a more accurate computer aided design, obtaining 0.9 GHz and 4.4 GHz cutoff frequency for 2 /spl mu/m and 0.8 /spl mu/m minimum feature transistors, respectively.
author_names: Iulian Constantin Gradinariu

Christian Gontrand
title: A high performance lateral PNP transistor structure
year: 1996

abstract: The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self aligned emitter base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions.
author_names: Burhan Bayraktaroglu

Natalino Camilleri

S A Lambert
title: Microwave pnp AlGaAs/GaAs heterojunction bipolar transistor
year: 1988

abstract: A vertical pnp BJTs on thin SOI is designed and characterized by using the mixed numerical two dimensional process and device simulator (Sentaurus) The DC, frequency, and breakdown characteristics of the vertical pnp on SOI are simulated and analyzed. The peak of b is 85 at Vbe= 0.7. The maximum of the cutoff frequency ft for the pnp bipolar transistor on SOI attain 10.6 GHz, and the value of BVceo for the pnp bipolar transistor on SOI achieves 7.3V, respectively. The availability of performance pnp transistor should enable significantly improved bipolar circuit design.
author_names: Jiexin Luo

Jing Chen

Jianhua Zhou

Qingqing Wu

Xiaolu Huang

Xi Wang
title: Design and simulation of the vertical pnp transistor on SOI
venue: 2010 10th IEEE International Conference on Solid State and Integrated Circuit Technology
year: 2010

abstract: Preliminary results of the first successful operation of pnp AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy are reported. A common emitter current gain of 50 was obtained for a base width of 0.1 mm. For collector currents larger than a certain value, a negative output differential resistance (NDR) was seen at temperatures between 360 and 83 K. The onset of collector current for NDR was found to increase with decreasing temperature from 40 mA at 360 K to 200 mA at 83 K for emitter base junction area of 10 mmx50 mm. The NDR was seen for both common base and common emitter characteristics and for both constant input currents and voltages. Increased surface recombination current at the edges of the emitter base junction at large electric fields, large currents, and high temperatures appears to be the cause for NDR.
author_names: Naresh Chand

Tim Henderson

Robert Fischer

W Kopp

Hadis Morkoc

Lawrence Joseph Giacoletto
title: A pnp AlGaAs/GaAs heterojunction bipolar transistor
year: 1985

abstract: Negative impedances having very stable characteristics are obtained with circuits using transistors. The physical characteristics of transistors, compactness, long life, simple power requirements, plus constancy of pertinent electrical parameters enhance their practical utility in the production of negative impedances.
author_names: John G Linvill
title: Transistor Negative Impedance Converters
venue: Proceedings of the IRE
year: 1953

abstract: Abstract An analysis for modified lateral PNP transistors with an applied or built in electric field in the base region is performed for several different cases. Improvement in operation is obtained for the modified devices and this is shown by comparing the results with unmodified equivalent structures.
author_names: Thomas A DeMassa

Larry Rispin
title: Analysis of modified lateral PNP transistors
year: 1975