Query: semiconductor nanomaterial models

Candidate papers:

abstract: In this study, we will compare the study done by different researchers on the semiconductor II VI group material by using different models including DMR (Diffusivity Mobility Ratio) We will check out the DMR and other model parameters used to compare the performance of semiconductor II VI group material. The basic formulation and the study of these models will help us to understand the basic properties of the nanomaterials studied so far. Keywords: DMR, Einstein relation, models, nanomaterial, semiconductor material group II VI
author_names: Rahul Jain

Kh Gopal Krishna Singh
title: Comparative study of models for II VI group semiconductor nanomaterials using DMR
year: 2018

abstract: On decreasing size down to nanoscale, the physical, optical and quantum mechanical properties of the materials no longer remain constant but become tuneable. In order to understand these unusual properties of nanomaterials, some theoretical models and experiments have been proposed from various perspectives. The explanation of energy band gap increment can be presented in terms of quantum confinement effect. A simple model based on cohesive and activation energy, free from adjustable parameters to calculate the size and shape dependent band gap expansion is derived for the semiconductor nanocompounds. The model predicts that the energy band gap increases on decreasing the size of the particle of nanomaterial semiconductors. Also, it is seen that the effects of shape alter the band gap energy of nanomaterials and this effect on band gap energy becomes larger with the decrease in particle size. Our predictions are very consistent with the available experimented data and the simulation results.
author_names: Madan Singh

Abhishek Singhal
title: Modeling of Shape and Size Effects for the Band Gap of Semiconductor Nanoparticles
venue: 2018 2nd International Conference on Micro Electronics and Telecommunication Engineering (ICMETE)
year: 2018

abstract: Abstract In the current paper the properties of surface plasmon polaritons as well as hybrid polarized surface electromagnetic waves at the plane interface of a porous semiconductor nanomaterial and a hypercrystal are studied theoretically and numerically. The nanomaterial, as well as the hypercrystal, is made of n type doped indium antimonide (n InSb) semiconductor layers. The losses which inherent to the semiconductor materials are taken into account. To describe the properties of the constituent semiconductor layers the approximate analytical temperature models for concentration and mobility of conduction electrons are applied. This allows to consider the effect of electron scattering on the properties of supported electromagnetic modes in the wide frequency range. The contacting materials are considered in the subwavelength approximation when it is possible to introduce the effective permittivity components. It is shown that taking into account dissipation processes in the semiconductor constituent layers result in the appearance of additional surface modes branches, changes in the surface waves penetration depth, frequency and angular existence domains.
author_names: Illia V Fedorin
title: Surface electromagnetic waves at the interface between dissipative porous nanocomposite and hypercrystal under different temperatures
venue: Physics Letters A
year: 2019

abstract: Photoelectrochemical (PEC) analysis is a new detection technique developed in recent years, which has the advantages of high sensitivity, low background signal and desirable selectivity, obtaining the great progress in sensing applications. Semiconductor nanomaterials with excellent photoelectric activity have played a vital role in the construction of PEC sensing platform. Thus, this Review introduces the recent advances of semiconductor nanomaterials based PEC analysis, and describes the typical PEC sensing strategies. Some representative nanomaterials, including metallic oxides, metallic sulfides, graphitic carbon nitride, transition metal dichalcogenides and quantum dots, are summarized for advanced PEC devices, as well as their applications in nucleic acid analysis, immunoassays, cell detection, protein and enzyme sensing, and small biomolecule monitoring. Finally, some future opportunities and challenges of PEC biosensing are also discussed.
author_names: Yang Zang

Jing Fan

Yun Ju

Huaiguo Xue

Huan Pang
title: Current Advances in Semiconductor Nanomaterial Based Photoelectrochemical Biosensing.
venue: Chemistry
year: 2018

author_names: Aisha Salem
title: On New Mathematical Modeling Measuringthe Band Gap of Semiconductor in Nanomaterial
year: 2020

abstract: Nanosized semiconductive Pd containing sensor materials based on SnO2 were obtained by sol gel technique. The highly sensitive gas sensor based on 1.41 wt% Pd/SnO2 nanomaterial showed the maximum response value of 12.4 to 930 ppm CH4, and the kinetics of the sensor conductivity response and recovery were studied. The average particle size of the material with the highest response to methane was 14 15 nm. Study of the CH4 oxidation kinetics on the surface of the 1.41 wt% Pd/SnO2 sensor nanomaterial allowed the proposal of a theoretical model that can describe the kinetics of the conductivity response and recovery for such Pd doped sensors to methane. The values of the methane oxidation activation energies obtained from the experimental kinetic data for the CH4 oxidation reaction on the 1.41 wt% Pd/SnO2 gas sensitive material and the model based on the data of the sensor conductivity response and recovery were almost the same, indicating a leading role for the heterogeneous catalytic oxidation reaction occurring on the sensor surface.
author_names: Ludmila Oleksenko

George Fedorenko

Nelly Maksymovych
title: Effect of heterogeneous catalytic methane oxidation on kinetics of conductivity response of adsorption semiconductor sensors based on Pd/SnO2 nanomaterial
venue: Research on Chemical Intermediates
year: 2019

abstract: Abstract The modelling and simulation of low dimensional nanoelectronic devices is important, because the semiconductor industry has scaled transistors down to the sub 10 n m regime. The top of the barrier (ToB) transistor model has been developed and used to model transistors that are composed of various semiconducting materials. In this paper, a brief overview of the ToB transistor model is presented. The main objective of this paper is to provide a focused review on the device modelling milestones that have been achieved using the ToB transistor model. The accuracy of a few of these models is assessed by computing the normalised root mean square deviation. The ToB transistor model is widely used for computational studies on low dimensional field effect transistors with various channel materials, such as ultra thin bodies, two dimensional materials and one dimensional materials. The ToB transistor model is also useful for extensive research in circuit level simulations. In summary, this nanoscale model helps researchers to identify and evaluate the potential nanomaterials for future nanoelectronic applications.
author_names: Mu Wen Chuan

Kien Liong Wong

Afiq Hamzah

Shahrizal Rusli

Nurul Ezaila Alias

Cheng Siong Lim

Michael L P Tan
title: A review of the top of the barrier nanotransistor models for semiconductor nanomaterials
year: 2020

abstract: We study the performance of production planning models for wafer fabs in a rolling horizon setting under stochastic demand modeled using the Martingale Model of Forecast Evolution (MMFE) The models differ in how they incorporate lead times and safety stocks. The number of frozen periods is considered as an experimental factor to study the nervousness of the resulting plans. Our simulation experiments show that chance constrained production planning models that integrate safety stock and production planning decisions outperform others. The formulations with workload dependent lead times also outperform those with fixed lead times that are an integer multiple of the period length.
author_names: Timm Ziarnetzky

Lars Monch

Reha Uzsoy
title: Simulation Based Performance Assessment of Production Planning Models With Safety Stock and Forecast Evolution in Semiconductor Wafer Fabrication
venue: IEEE Transactions on Semiconductor Manufacturing
year: 2020

abstract: We report the development of a highly specific semiconductor quantum dots (QDs) based whole cell imaging sensor that offer rapid, reproducible, accurate, and long term cell imaging system on silanized microscope glass slides. The QD based imaging sensor involved capture of whole cells with QD labeled highly specific antibodies against over expressed cell membrane proteins. The QDs were first modified with a polymer coating to generate carboxyl groups on the surface. Using the carboxylated QDs, antibodies were covalent conjugated using carbodiimide chemistry to form 2(0)Ab~QD that were used to capture whole cell. The SK BR3 cell line was used as a model analyte in the sandwich type assay consisting of 1(0)Ab SK BR3 Ab' 2(0)Ab~QD. The assay was immobilized on an antibody modified silanized microscope slide that was subsequently mounted on a fluorescence microscope for detection. The results indicated that the QD based imaging sensor exhibited brighter signals compared with organic dye Texas red. The QD based whole cell imaging sensor was visible under the microscope even after one week without fixation.
author_names: Hengyi Xu

Zoraida P Aguilar

Hua Wei

Andrew Z Wang
title: Development of semiconductor nanomaterial whole cell imaging sensor on glass slides.
venue: Frontiers in bioscience
year: 2011

abstract: In designing and optimizing new generation nanomaterials and related quantum devices, dissipation versus decoherence phenomena are often accounted for via local scattering models, such as relaxation time and Boltzmann like schemes. Here we show that the use of such local scattering approaches within the Wigner function formalism may lead to unphysical results, namely anomalous suppression of intersubband relaxation, incorrect thermalization dynamics, and violation of probability density positivity. Furthermore, we propose a quantum mechanical generalization of relaxation time and Boltzmann like models, resulting in nonlocal scattering superoperators that enable one to overcome such limitations.
author_names: Rita Claudia Iotti

Fabrizio Dolcini

Fausto Rossi
title: Wigner function formalism applied to semiconductor quantum devices: Need for nonlocal scattering models
year: 2017