Query: Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm,

Candidate papers:

abstract: We have demonstrated the stable mode locked Nd:GdVO4 laser operating on the F 4(3/2) I 4(9/2) transition at 912 nm. With a four mirror folded cavity and a semiconductor saturable absorber mirror for passive mode locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode end pumped, and the total output Power from the out coupler is 128 mw at an incident pump power of 19.7 W. (C) 2008 Elsevier B.V. All rights reserved.
author_names: Changwen Xu

Zhiyi Wei

Kunna He

Dehua Li

Yong-dong Zhang

Zhi-Guo Zhang
title: Diode pumped passively mode locked Nd:GdVO4 laser at 912 nm
year: 2008

abstract: We demonstrated the first mode locked Nd:GdVO4 laser of 912 nm. Using a semiconductor saturable absorber mirror for passive mode locking, stable output power of 30.8 mW is obtained at a repetition rate of 152 MHz.
author_names: Chi Zhang

Ling Zhang

Chunyu Zhang

Dehua Li

Zhiyi Wei

Zhi-Guo Zhang

Wenbo Li
title: Diode Pumped Passively Mode Locked 912 nm Nd:GdVO4 Laser
year: 2006

abstract: Abstract A high power diode end pumped passively Q switched and mode locking (QML) Nd:GdVO4 laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z type laser cavity with Cr4+:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (TU) of the saturable absorber on the QML laser performance was investigated. Using the TU 95% Cr4+:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q switched envelope and the mode locking pulse were 224 kHz and 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the TU 90% Cr4+:YAG, we obtained a 100% modulation depth for the mode locking pulses inside the Q switched envelope.
author_names: F Chen

Xin Yu

Xudong Li

Renpeng Yan

Cheng Wang

Deying Chen

Zhonghua Zhang

Junhua Yu
title: High power diode pumped passively Q switched and mode locking Nd:GdVO4 laser at 912 nm
year: 2011

abstract: Stable mode locking laser pulse at 942nm by diode pumped Nd:GSAG laser has been demonstrated for the first time. We obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 220 mW.
author_names: Changwen Xu

Zhiyi Wei

Yong-dong Zhang

Dehua Li

Zhiguo Zhang

Xuyang Wang

Frank Kallmeyer

Shanpeng Wang

A Ding

Hans Joachim Eichler

Chunyu Zhang

Chun-qing Gao
title: Diode pumped passively mode locked Nd: GSAG laser at 942nm
venue: 2009 Conference on Lasers Electro Optics The Pacific Rim Conference on Lasers and Electro Optics
year: 2009

abstract: The electrical properties of Cr:YAG crystal had been calculated as dielectric constant (e) dielectric time (tdie) permittivity (Ie) permeability (m) electrical response time (TE) laser wave propagation speed through crystal (VP) skin depth (d) electrical susceptibility (kh crystal impedance (Z electrical conductivity (s induced electrical polarization (Pin) molar polarization (rp) and wave number (K) and some of other properties as transmittance (T) and refractive index(n) at (90% and 95% initial transmission for saturable absorber (Tu) in the passively Q switched mode locked (QML) Nd:GdVO4 laser system at (912nm) It can be concluded that each of electrical and magnetic flux density in Cr:YAG crystal which was incurrence to laser wave are mainly dependent on free electrons exists in it while the electrical polarization are dependent on the number of crystal molecules in the ground state
author_names: Methaq Mutter Mehdy AL-Sultani
title: Study Of The Electrical Properties For Cr+4:YAG Crystal In A Passively Q Switched Mode Locked (QML) Nd:Gdvo4 Laser At 912 Nm
year: 2013

abstract: We demonstrated a mode locked Nd:GdVO4 laser of operating at 912 nm. Using a semiconductor saturable absorber mirror for passive mode locking, stable output power of 22.6 mW is obtained at a repetition rate of 176 MHz.
author_names: Ling Zhang

Chi Zhang

Dehua Li

Chunyu Zhang

Yongbing Long

Zhiguo Zhang

Zhiyi Wei
title: Passively mode locked 912nm Nd:GdVO4 laser
venue: 2006 Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference
year: 2006

abstract: We have demonstrated a passively mode locked diode end pumped all solid state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Stable cw mode locking with a 3.8 ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode locked fundamental mode average output power of 3.9 W was achieved with an overall optical to optical efficiency of 29.0% and the slope efficiency was 38.1%
author_names: Jing-Liang He

Ya-Xian Fan

Juan Du

Yong-gang Wang

Sheng Liu

Hui-Tian Wang

Lian-han Zhang

Yin Hang
title: 4 ps passively mode locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable absorber mirror.
venue: Optics letters
year: 2004

abstract: We describe here the use of a 798 nm stabilized high brightness tapered laser diode to pump a Nd:ASL crystal for 900 nm laser operation. An output power of 150 mW is obtained.
author_names: David Paboeuf

Gaelle Lucas-Leclin

Patrick M Georges

Bernd Sumpf

Gotz Erbert

Cyrille Varona

Pascal Loiseau

Gerard Aka

Bernard Ferrand
title: 900 nm Emission of a Nd:ASL Laser Pumped by an Extended Cavity Tapered Laser Diode
year: 2007

abstract: Passive mode locking of a Nd:KGW laser with hot band diode pumping at 910 nm was demonstrated. A semiconductor saturable absorber mirror was used as a mode locking mechanism. The laser generated 2.4 ps pulses at a repetition rate of ~83.8 MHz. An average output power of 87 mW was obtained at 1067 nm. To the best of our knowledge, this is the first report on passive mode locking of a Nd:KGW laser with low quantum defect pumping which holds great promise for further output power scaling.
author_names: Wei Lin

Shota Sawai

Aruto Hosaka

Hikaru Kawauchi
title: Passive mode locking of a Nd:KGW laser with hot band diode pumping
year: 2016

abstract: Mode locking technique is a widely used method for generating ultrashort laser pulses. The mode locked laser output is a sequence of equally spaced laser pulses. The pulse width is limited by the spectral range of the gain medium and inversely related to the bandwidth of the laser emission. Compared with the active mode locking technique, passively modelocked laser with saturable absorber is able to generate much shorter pulse with a simple configuration. In particularly, based on the passive mode locking mechanism, the Kerr lens mode locking (KLM) Ti:sapphire laser is recognized as the most important ultrafast laser source. Not only a series of commercial femtosecond lasers with Ti:sapphire crystal were released, but also lead to many innovations in science, such as frequency comb, laser wake field acceleration, attosecond science, laser micro fabrication etc. However, the major drawback of Ti:sapphire laser is its green pump laser source. Currently available green lasers generated by frequency doubled Nd:YAG laser or by Argon laser are relatively bulky and expensive, which limits the practical application of ultrafast Ti:sapphire lasers.
author_names: Zhiyi Wei

Binbin Zhou

Yong-dong Zhang

Yuwan Zou

Xinming Zhong

Changwen Xu

Zhiguo Zhang
title: All Solid State Passively Mode Locked Ultrafast Lasers Based on Nd, Yb, and Cr Doped Media
year: 2012