Query: protein arrays using electronic semiconductor

Candidate papers:

abstract: Protein arrays will greatly accelerate research and development in medical and biological sciences. We have used cell free protein biosynthesis and a parallel immobilization strategy for producing protein biochips. We demonstrate a model two protein microarray using luciferase and green fluorescent protein, both expressed in a cell free system and specifically immobilized on CombiMatrix semiconductor oligonucleotide microarrays. This demonstration provides evidence for the appropriate folding, activity, robust presentation, and efficient flexible detection of proteins on the microscale.
author_names: Andrew V Oleinikov

Matthew D Gray

Jun Zhao

Donald D Montgomery

Andrey Ghindilis

Kilian Dill
title: Self assembling protein arrays using electronic semiconductor microchips and in vitro translation.
venue: Journal of proteome research
year: 2003

abstract: Particles in the nanometer size range are attracting increasing attention with the growth of interest in nanotechnological disciplines. Nanoparticles display fascinating electronic and optical properties as a consequence of their dimensions and they may be easily synthesized from a wide range of materials. The dimensions of these particles makes them ideal candidates for the nanoengineering of surfaces and the fabrication of functional nanostructures. In the last five years, much effort has been expended on their organization on surfaces for the construction of functional interfaces. In this review, we address the research that has led to numerous sensing, electronic, optoelectronic, and photoelectronic interfaces, and also take time to cover the synthesis and characterization of nanoparticles and nanoparticle arrays.
author_names: Andrew N Shipway

Evgeny Katz

Itamar Willner
title: Nanoparticle arrays on surfaces for electronic, optical, and sensor applications.
venue: Chemphyschem a European journal of chemical physics and physical chemistry
year: 2000

abstract: Density of States function, g(E) Fermi Dirac Distribution function, f(E) Distribution Function and Fermi Energy Equilibrium Distribution of Electrons and Holes n0 and p0 Equation Intrinsic carrier concentration Fermi level for Intrinsic Semiconductor Extrinsic Semiconductor Position of the Fermi Level of the Extrinsic Semiconductor Non Degenerated Semiconductor Variation of EF with Doping Concentration and with Temperature Compensated Semiconductor Statistics of donors and acceptors Formula to remember Question Bank Solved problems Assignment
author_names: S M Sze
title: PHYSICS OF SEMICONDUCTOR DEVICES
year: 2007

abstract: The heterogeneity of as synthesized single walled carbon nanotubes (SWNTs) precludes their widespread application in electronics, optics and sensing. We report on the sorting of carbon nanotubes by diameter, bandgap and electronic type using structure discriminating surfactants to engineer subtle differences in their buoyant densities. Using the scalable technique of density gradient ultracentrifugation, we have isolated narrow distributions of SWNTs in which >97% are within a 0.02 nm diameter range. Furthermore, using competing mixtures of surfactants, we have produced bulk quantities of SWNTs of predominantly a single electronic type. These materials were used to fabricate thin film electrical devices of networked SWNTs characterized by either metallic or semiconducting behaviour.
author_names: Michael S Arnold

Alexander A Green

James F Hulvat

Samuel I Stupp

Mark C Hersam
title: Sorting carbon nanotubes by electronic structure using density differentiation
venue: Nature nanotechnology
year: 2006

abstract: 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination Trapping. Steady State Carrier Generation Quasi Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers Built in Fields. Diffusion and Recombination The Continuity Equation. Steady State Carrier Injection Diffusion Length. The Haynes Shockley Experiment. Gradients in the Quasi Fermi Levels. 5 JUNCTIONS. Fabrication of p n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD) Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward and Reverse Biased Junctions Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch off and Saturation. Gate Control. Current Voltage Characteristics. The Metal Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT) Short Channel Effects. The Metal Insulator Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance Voltage Analysis. Time dependent Capacitance Measurements. Current Voltage Characteristics of MOS Gate Oxides. The MOS Field Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate Induced Drain Leakage. 7 BIPOLAR JUNCTION TRANSISTORS. Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level Thermal Effects. Base Resistance and Emitter Crowding. Gummel Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High Frequency Transistors. Heterojunction Bipolar Transistors. 8 OPTOELECTRONIC DEVICES. Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light Emitting Diodes. Light Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers. 9 INTEGRATED CIRCUITS. Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon on Insulator (SOI) Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large Scale Integration (ULSI) Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip Chip Techniques. Packaging. 10. HIGH FREQUENCY AND HIGH POWER DEVICES. Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p n p n Diode: Basic Structure. Two Transistor Analogy. Variation of a with Injection. Forward Blocking State. Conducting State. Triggering Mechanisms. Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor. APPENDICES. Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. INDEX.
author_names: Ben G Streetman
title: Solid state electronic devices
year: 1972

abstract: Arrays of highly ordered silicon nanowire (SiNW) clusters are fabricated using complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology, and the ultrasensitive, label free, electrical detection of cardiac biomarker in real time using the array sensor is presented. The successful detection of human cardiac troponin T (cTnT) has been demonstrated in an assay buffer solution of concentration down to 1 fg/mL, as well as in an undiluted human serum environment of concentration as low as 30 fg/mL. The high specificity, selectivity, and swift response time of the SiNWs to the presence of ultralow concentrations of a target protein in a biological analyte solution, even in the presence of a high total protein concentration, paves the way for the development of a medical diagnostic system for point of care application that is able to provide an early and accurate indication of cardiac cellular necrosis.
author_names: Jay Huiyi Chua

Ru-Ern Chee

Ajay Agarwal

She Mein Wong

Guo-Jun Zhang
title: Label free electrical detection of cardiac biomarker with complementary metal oxide semiconductor compatible silicon nanowire sensor arrays.
venue: Analytical chemistry
year: 2009

abstract: The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower cost solutions. Here we describe a DNA sequencing technology in which scalable, low cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template directed DNA polymerase synthesis using all natural nucleotides on this massively parallel semiconductor sensing device or ion chip. The ion chip contains ion sensitive, field effect transistor based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal oxide semiconductor (CMOS) process, allows for low cost, large scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.
author_names: Jonathan Rothberg

Wolfgang Hinz

Todd M Rearick

Jonathan Schultz

William Mileski

Mel Davey

John Harris Leamon

Kim L Johnson

Mark J Milgrew

Matthew Edwards

Jeremy Hoon

Jan Fredrik Simons

David F Marran

Jason W Myers

John F Davidson

Annika Branting

John R Nobile

Bernard Peter Puc

David Light

Travis A Clark

Martin Huber

Jeffrey T Branciforte

Isaac B Stoner

Simon E Cawley

Michael R Lyons

Yutao Fu

Nils Homer

Marina Sedova

Xin Miao

Brian D Reed

Jeffrey Sabina

Erika Feierstein

Michelle A Schorn

Mohammad Alanjary

E Dimalanta

Devin C Dressman

Rachel W Kasinskas

Tanya D Sokolsky

Jacqueline A Fidanza

Eugeni Namsaraev

Kevin J McKernan

Alan Williams

George T Roth

James Bustillo
title: An integrated semiconductor device enabling non optical genome sequencing
venue: Nature
year: 2011

abstract: With their bright, photostable fluorescence, semiconductor quantum dots show promise as alternatives to organic dyes for biological labeling. Questions about their potential cytotoxicity, however, remain unanswered. While cytotoxicity of bulk cadmium selenide (CdSe) is well documented, a number of groups have suggested that CdSe QDs are cytocompatible, at least with some immortalized cell lines. Using primary hepatocytes as a liver model, we found that CdSe core QDs were indeed acutely toxic under certain conditions. Specifically, we found that the cytotoxicity of QDs was modulated by processing parameters during synthesis, exposure to ultraviolet light, and surface coatings. Our data further suggests that cytotoxicity correlates with the liberation of free Cd2+ ions due to deterioration of the CdSe lattice. When appropriately coated, CdSe core QDs can be rendered non toxic and used to track cell migration and reorganization in vitro. Our results inform design criteria for the use of QDs in vitro and especially in vivo where deterioration over time may occur.
author_names: Austin M Derfus

Warren C W Chan

Sangeeta N Bhatia
title: Probing the Cytotoxicity Of Semiconductor Quantum Dots.
venue: Nano letters
year: 2004

abstract: Electronic and optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, and medical instruments. Given the demand for ever more compact and powerful systems, there is growing interest in the development of nanoscale devices that could enable new functions and/or greatly enhanced performance. Semiconductor nanowires are emerging as a powerful class of materials that, through controlled growth and organization, are opening up substantial opportunities for novel nanoscale photonic and electronic devices. We review the broad array of nanowire building blocks available to researchers and discuss a range of electronic and optoelectronic nanodevices, as well as integrated device arrays, that could enable diverse and exciting applications in the future.
author_names: Yat Li

Fang Qian

Jie Xiang

Charles M Lieber
title: Nanowire electronic and optoelectronic devices
year: 2006

abstract: Semiconductor nanocrystals were prepared for use as fluorescent probes in biological staining and diagnostics. Compared with conventional fluorophores, the nanocrystals have a narrow, tunable, symmetric emission spectrum and are photochemically stable. The advantages of the broad, continuous excitation spectrum were demonstrated in a dual emission, single excitation labeling experiment on mouse fibroblasts. These nanocrystal probes are thus complementary and in some cases may be superior to existing fluorophores.
author_names: Marcel P Bruchez

Mario M Moronne

Pi Gin

Shimon Weiss

A Paul Alivisatos
title: Semiconductor nanocrystals as fluorescent biological labels.
venue: Science
year: 1998