Query: MSM photodetectors with different electrodes

Candidate papers:

abstract: This paper presents the fabrication and performance analysis of Zinc Oxide (ZnO) and Ag doped ZnO (SZO) based Metal Semiconductor Metal (MSM) ultraviolet (UV) photodetectors. The films were constructed on p type silicon (Si) (100) substrates by sol gel technique. Silver (Ag) electrodes were used as a Schottky contact for the fabricated devices. The structural, optical, and electrical properties for the fabricated films were studied and analyzed to show the effects of Ag dopants. With the applied voltage in the range of 5 to 5 V) under dark condition, the values of the Schottky contact parameters were extracted and compared. Under UV illumination (254 nm) with different optical power levels, the performance parameters were extracted. The SEM image showed a non uniform distribution of the Ag dopants, these dopants were formed clusters and this clusters acts as traps for the incident light. The saturation current was decreased for the device based on Ag doped ZnO film which enhanced the performance of the device.
author_names: Ghusoon M Ali

Muneer Aboud Hashem

Mohammed Wesam Naji
title: Performance analysis of Ag:ZnO based UV MSM photodetectors prepared by sol gel technique
venue: 2015 Third International Conference on Technological Advances in Electrical, Electronics and Computer Engineering (TAEECE)
year: 2015

abstract: The fabrication and characterizations of ZnO quantum dots (QDs) based interdigitated metal semiconductor metal (MSM) photodetector using different electrode metals is reported in this work. The colloidal ZnO QDs used for the photodetection have an average particle size of ~2.53 nm. The interdigitated pattern of gold (Au) silver (Ag) and aluminum (Al) metals are formed over ZnO QDs. The comparative study of these metal electrodes is carried out in terms of I V characteristics, time response, responsivity, and stability under dark and UV illumination. It is found that the photodetector using Au interdigitated electrode has better electrical and optical performance as compared to Ag and Al electrodes.
author_names: Smrity Ratan

Chandan Kumar

Amit Kumar

Deepak Kumar Jarwal

Ashwini Kumar Mishra

Rishibrind Kumar Upadhyay

Satyabrata Jit
title: Performance of ZnO Quantum Dots Based Photodetectors: Effect of Metal Electrodes
venue: 2018 15th IEEE India Council International Conference (INDICON)
year: 2018

abstract: This paper focuses on the influence of barrier layer on photoelectric properties of MSM photodetectors based on black silicon. Si3N4 barrier layers with different thickness were added between the black silicon layer and electrodes in the MSM structure by PECVD. According to the results, the thickness of barrier layer plays a crucial role in reducing the dark current and increasing the Signal Noise Rate(SNR) of the detector. In the end, we obtained an optimum thickness that could not only ensure a high SNR but also lead the photodetector to a great responsivity.
author_names: Yuanjie Su

Yadong Jiang

Zhiming Wu

Guodong Zhao
title: Barrier layer effect on photoelectric properties of MSM photodetectors based on black silicon
venue: Proceedings of 2011 International Conference on Electronics and Optoelectronics
year: 2011

abstract: The large band gap material of the AlxGa1 xN alloy is an excellent choice for ultraviolet photodetectors.In this paper,Al0.25Ga0.75N thin film has been fabricated on Al2O3 by metal organic chemical vapor deposition(MOCVD).The planar geometry interdigital electrodes of metal semiconductor metal(MSM)photodetectors was fabricated by ultraviolet photolithography and wet etching methods.The responsivity has been enhanced largely by annealing at different temperatures in N2 ambient conditions.
author_names: Xing Dalin
title: Effects of Thermal Annealing on the Properties of Al_(0.25)Ga_(0.75)N MSM UV Photodetectors
year: 2011

abstract: Abstract The sputter ITO, TiN and E gun ITO films deposited onto GaN as the transparent electrodes in the application of metal semiconductor metal (MSM) photodetectors were first fabricated and reported. The transmittance of sputter ITO, TiN and E gun ITO films for thickness of 1000 A was 94, 62 and 85% respectively, at a wavelength of 400 nm. Unlike TiN films, the variation of transmittance of sputter ITO films was not sensitive to the thickness. Also, the effective barrier height of sputter ITO, TiN and E gun ITO films to GaN was 0.46, 0.59 and 0.95 eV, respectively. Furthermore, the photo/dark contrast of sputter ITO, TiN and E gun ITO MSM photodetectors was 0.36, 3 and 4.25 orders, at 5 V bias, respectively.
author_names: Yu-Zung Chiou

J R Chiou

Yan Kuin Su

Shoou Jinn Chang

Bohr-Ran Huang

Chia-Sheng Chang

Yi-Chao Lin
title: The characteristics of different transparent electrodes on GaN photodetectors
year: 2003

abstract: Abstract We have designed photodetectors based on a combination of nanocrystalline diamond (NCD) and bilayer metallic layers in a metal semiconductor metal (MSM) structure. The NCD films were deposited on silicon substrates which nucleated by different metallic layers (tungsten, molybdenum) and nanodiamond suspension. We found that the metallic layers not only significantly improve the nucleation density of the substrates but also reduce the surface roughness of the fabricated NCD films from 8.3 nm to 4.7 nm. Furthermore, the one step fabrication of MSM photodetectors adopts metallic interlayers consisting of two functions (diamond nucleation site and back electrodes) which shows high detection efficiency and rapid response to UV irradiation in air ambient. The W/NCD/W structure exhibits good Ohmic contact characteristics and significant changes ~3 orders of magnitude) in photocurrent and stable reproducibility. The achievement of this research indeed demonstrates great prospects of photodetector applications of NCD films in the future.
author_names: Chi-Wen Liu

Jen-Ai Lee

Yin-Tung Sun

Minh-Khoa BenDao

Chii-Ruey Lin
title: Effects of metallic interlayers on the performance of nanocrystalline diamond metal semiconductor metal photodetectors
year: 2018

abstract: In this study, we design and demonstrate a novel type of self powered UV photodetectors (PDs) using single crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self powered UV PDs with asymmetric metal semiconductor metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as assembled PDs have a high on/off ratio of 19173 and a fast response speed (tr 0.09 s, tf 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures and ZnS heterostructure based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self powered mode can reach as high as 19172, 2.56 A/W and 1.67 x 1010 cm Hz1/2 W 1, respectively. In addition, the photosensing performance of the self powered UV PDs is studied in different ambient conditions (e.g. in air and vacuum) Moreover, a physical model based on band energy theory is proposed to explain the origin of the self driven photoresponse characteristic in our device. The totality of the above study signifies that the present self powered ZnS NTs based UV nano photodetector may have promising application in future self powered optoelectronic devices and integrated systems.
author_names: Qinwei An

Xianquan Meng

Ke Xiong

Yunlei Qiu
title: Self powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed
venue: Scientific Reports
year: 2017

abstract: Abstract Indium tin oxide (ITO) Ni/ITO and Ni layers were deposited onto glass and/or SiC substrates by DC sputtering under different deposition conditions. SiC based metal semiconductor metal (MSM) ultraviolet (UV) photodetectors were also fabricated using these materials as contract electrodes. It was found that ITO film deposited without oxygen gas could provide us a better optical property and a better electrical property. It was also found that the dark current of the ITO/SiC MSM UV photodetector was extremely large. Furthermore, it was found that the insertion of a 10 nm Ni layer could significantly reduce the dark current. It was also found that the photo current to dark current contrast was more than 3 orders of magnitude with a 5 V applied bias for the SiC MSM UV photodetector with 10 nm Ni/90 nm ITO contact electrodes. With an even larger 40 V applied bias, the photo current to dark current contrast could almost reach 4 orders of magnitude.
author_names: Yan Kuin Su

Yu-Zung Chiou

Chia-Sheng Chang

Shoou Jinn Chang

Yi Chao Lin

Jone F Chen
title: 4H SiC metal semiconductor metal ultraviolet photodetectors with Ni/ITO electrodes
year: 2002

abstract: Aluminum doped zinc oxide (AZO) based metal insulator semiconductor insulator metal (MISIM) photodetectors (PDs) with a thin SiO2 insulating layer were fabricated on Si substrates. Interdigited electrodes with three different electrode spacing "s" ~10, 20 and 50 mm were fabricated using palladium (Pd) metal and by keeping similar value of finger spacing "a" and finger width "b" for all the electrodes. The performance of Pd/SiO2/AZO/SiO2/Pd structured MISIM devices were compared with Pd/AZO/Pd structured MSM devices (which were not having insulating layer) The effect of SiO2 layer on the characteristics of Pd/SiO2/AZO/SiO2/Pd structured MISIM PDs was studied systematically. The variation in the value of dark current and photo current according to finger spacing were examined for all the three MISIM PDs. The value of contrast ratio for MISIM I to MISIM III devices was found to be 1113.40, 1185.05 and 3327.94 respectively. While, the value of contrast ratio was lesser for similarly fabricated MSM devices.
author_names: Shaivalini Singh
title: Al doped ZnO based MISIM ultraviolet photodetectors
year: 2017

abstract: Platinum was deposited on unintentionally doped n AlxGa1 xN films grown by metal organic chemical vapor deposition (MOCVD) to form MSM ultraviolet photodetectors. All devices were annealed for 10 min at different temperature in N2 ambient. Results indicate that the generation of hillocks on the surface of Pt thin film electrodes at the elevated temperatures due to relieving compressive stress affects the dark current directly. Dark current less than 10pA in the 10V,10V) range was obtained from a device after annealing at 900degC. Both detectors show sharp spectral responsivity cutoff of about three orders of magnitude by 325nm and 315nm respectively.
author_names: Xiangfeng Zhang

Weiguo Sun

Zhengxiong Lu

Caijing Cheng

Hongyan Zhao
title: Study on annealed Pt/n AlxGa1 xN MSM UV photodetectors
venue: SPIE/COS Photonics Asia
year: 2008