Query: MOSFET models for VLSI circuit simulation: theory and practice

Candidate papers:

abstract: This study discusses MOS transistor models and their parameters required for VLSI simulation of MOS integrated circuits. It gives detailed presentation of model parameter determination for MOS models. Various models are developed ranging from simple to more sophisticated models that take into account new physical effects observed in submicron devices used in today's MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the model in describing the device characteristics are clearly understood. Understanding these models is essential when designing circuits for the state of the art MOS ICs. Since threshold voltage is the single most important MOSFET parameter, a full chapter is devoted to the development of the device threshold voltage model. Due to the importance of designing reliable circuits, the device reliability models, as applied for circuit simulations, are also covered. Since the device parameters vary due to inherent processing variations, how to arrive at worst case design parameters are also covered. Presentation of the material is such that even an undergraduate student, not well familiar with semiconductor device physics, can understand the intricacies of MOSFET modeling. The book serves as a technical source in the area of MOSFET modeling for state of the art MOSFET technology for both practicing device and circuit engineers, and engineering students interested in the area.
author_names: Narain D Arora
title: MOSFET Models for VLSI Circuit Simulation: Theory and Practice
year: 1993

abstract: Overview Review of Basic Semiconductor and pn Junction Theory MOS Transistor Structure and Operation MOS Capacitor Threshold Voltage MOSFET DC Model Dynamic Model Modeling Hot Carrier Effects Data Acquisition and Model Parameter Measurements Model Parameter Extraction Using Optimization Method SPICE Diode and MOSFET Models and Their Parameters Statistical Modeling and Worst Case Design Parameters.
author_names: Narain D Arora
title: MOSFET Modeling for VLSI Simulation Theory and Practice
venue: International Series on Advances in Solid State Electronics and Technology
year: 2007

abstract: For both introductory and advanced courses in VLSI design, this authoritative, comprehensive textbook is highly accessible to beginners, yet offers unparalleled breadth and depth for more experienced readers. The Fourth Edition of CMOS VLSI Design: A Circuits and Systems perspective presents broad and in depth coverage of the entire field of modern CMOS VLSI Design. The authors draw upon extensive industry and classroom experience to introduce todays most advanced and effective chip design practices. They present extensively updated coverage of every key element of VLSI design, and illuminate the latest design challenges with 65 nm process examples. This book contains unsurpassed circuit level coverage, as well as a rich set of problems and worked examples that provide deep practical insight to readers at all levels.
author_names: Neil Weste

D Harris
title: CMOS VLSI Design: A Circuits and Systems Perspective
year: 2004

abstract: This book presents a unified view of MOSFET modeling, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies, as opposed to gaining familiarity with the models in isolation. Secondly, while MOS devices are well covered in a number of text books, device physics do not get necessarily linked to model parameters which serve as an input in design phase, leaving a wide gap between device understanding and its use for optimal circuit performance. Further, being technology driven, models undergo evolution continuously. Yet from the projection of International Technology Roadmap for Semiconductors (ITRS) it is possible to identify the core physical concepts that will drive the evolution and trend that is likely to dominate the future. Therefore, the impact of quantum mechanical related phenomena has been given more prominent presence in the pedagogic approach of this book than is available in currently available texts.Uses a unified approach to coach students through the confusing array of MOSFET models One of the first books to relate MOS physics with device models to better prepare practitioners for real world design activities Helps fables designers bridge the gap with off site foundries Presents topics that will prepare readers for long term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study Includes presentation slides with book figures for lecturer use
author_names: A B Bhattacharyya
title: Compact MOSFET Models for VLSI Design
year: 2009

abstract: This paper presents a systematic methodology to develop statistical compact MOS models for advanced VLSI circuit simulation. Process variability in advanced CMOS technologies imposes a serious challenge for computer aided VLSI circuit design. Therefore, statistical compact model has become indispensable for realistic assessment of the impact of random process variability on advanced VLSI circuit performance. This paper describes the major parameter set causing local and global process variability in nanoscale CMOS devices and presents a methodology to generate simplified statistical compact MOS models for VLSI circuit simulation.
author_names: Samar K Saha
title: Process Variability Modeling for VLSI Circuit Simulation
year: 2011

abstract: (NOTE: Chapters 3 11 include an Introduction, Historical Development and Basic Concepts, Manufacturing Methods and Equipment, Measurement Methods, Models and Simulation, Limits and Future Trends in Technologies and Models, Summary of Key Ideas, References, and Problems. 1. Introduction and Historical Perspective. Introduction. Integrated Circuits and the Planar Process Key Inventions That Made It All Possible. Semiconductors. Semiconductor Devices. Semiconductor Circuit Families. Modern Scientific Discovery Experiments, Theory and Computer Simulation. The Plan for This Book. 2. Modern CMOS Technology. CMOS Process Flow. 3. Crystal Growth, Wafer Fabrication and Basic Properties of Silicon Wafers. 4. Semiconductor Manufacturing Clean Rooms, Wafer Cleaning and Gettering. 5. Lithography. 6. Thermal Oxidation and the Si/SiO2 Interface. 7. Dopant Diffusion. 8. Ion Implantation. 9. Thin Film Deposition. 10. Etching. 11. Backend Technology.
author_names: James D Plummer

Michael D Deal

Peter B Griffin
title: Silicon VLSI Technology: Fundamentals, Practice, and Modeling
year: 2020

abstract: The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase locked loops, delta sigma sensing circuits, voltage/current references, op amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.
author_names: R J Baker
title: CMOS Circuit Design, Layout, and Simulation
year: 1997

abstract: An alpha power law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short channel MOSFETs, is introduced. The model is an extension of Shockley's square law MOS model in the saturation region. Since the model is simple, it can be used to handle MOSFET circuits analytically and can predict the circuit behavior in the submicrometer region. Using the model, closed form expressions for the delay, short circuit power, and transition voltage of CMOS inverters are derived. The delay expression includes input waveform slope effects and parasitic drain/source resistance effects and can be used in simulation and/or optimization CAD tools. It is found that the CMOS inverter delay becomes less sensitive to the input waveform slope and that short circuit dissipation increases as the carrier velocity saturation effect in short channel MOSFETs gets more severe.
author_names: Takayasu Sakurai

A Richard Newton
title: Alpha power law MOSFET model and its applications to CMOS inverter delay and other formulas
year: 1990

author_names: H B Bakoglu
title: Circuits, interconnections, and packaging for VLSI
year: 1990

abstract: The problem of achieving compact, high performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71degC above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh speed VLSI circuits.
author_names: David B Tuckerman

R F W Pease
title: High performance heat sinking for VLSI
venue: IEEE Electron Device Letters
year: 1981