Query: Dual-wavelength TEM01 mode passively mode-locked Nd:YAG laser witha semiconductor saturable absorber

Candidate papers:

abstract: A dual wavelength \rm TEM}_{01}$TEM01 mode synchronous continuous wave passively mode locked (CWML) Nd:YAG laser has been demonstrated for the first time to the best of our knowledge with a semiconductor saturable absorber mirror (SESAM) at 1319 and 1338 nm. The maximum average output power of 10.84 W was obtained at a 113.8 W absorbed pump power, corresponding to an optical to optical conversion efficiency of 9.5% The dual wavelength CWML pulses had a pulse duration of 35.1 ps at a repetition rate of 76 MHz. The beam quality was measured to be \rm M}^2} {2.51}$M2=2.51.
author_names: Ning Wen

Long-Pu Li

Nan Zong

Wei Tu

Ke Liu

Zhimin Wang

Yong Bo

Qinjun Peng

Da-Fu Cui

Zu-Yan Xu
title: Dual wavelength TEM01 mode passively mode locked Nd:YAG laser witha semiconductor saturable absorber mirror.
venue: Applied optics
year: 2019

abstract: A dual central wavelength passively mode locked laser with full modulation in the 0.31 THz optical beating is achieved by using a diffusion bonded Nd:YVO4/Nd:GdVO4 crystal and a semiconductor saturable absorber mirror. The output power of the dual band emission is well balanced by tuning the focal position of the pump waist. At a pump power of 13 W, the total output power is up to 2.7 W with a repetition rate of 297.9 MHz. The autocorrelation traces clearly reveal the synchronization of the dual band emission. Moreover, an analytical model is developed to manifest the multi pulse structure caused by the etalon effect of the gain medium. More important, we experimentally verify that the etalon effect can be completely eliminated by using the wedge cut diffusion bonded Nd:YVO4/Nd:GdVO4 crystal.
author_names: F L Chang

C L Sung

T L Huang

T W Wu

H H Cho

H C Liang

Yohchia Frank Chen
title: Dual central wavelength passively mode locked diffusion bonded Nd:YVO4/Nd:GdVO4 laser with a semiconductor saturable absorber mirror
year: 2017

abstract: A self starting simple structured dual wavelength passively mode locked (ML) erbium doped fiber (EDF) laser is proposed in this Letter. An all fiber ring cavity is adopted and a transmission type semiconductor saturable absorber is used as modelocker. In this laser, there are two gain humps located at the 1530 nm region and the 1550 nm region, respectively. Along with the length of EDF increasing, the intensity of the hump at 1530 nm region is gradually suppressed because of the re absorption of emission by the ground state. With the proper length of EDF, the gain intensities of two regions are very close. When the pump power is above the ML threshold, the self starting dual wavelength ML operation is achieved easily without manual adjustment. The two spectral peaks with close intensities are located at 1532 and 1552 nm, respectively. The effect of intracavity dispersion on the output spectrum is also experimentally demonstrated.
author_names: Shi Junkai

Weihu Zhou
title: Self starting simple structured dual wavelength mode locked erbium doped fiber laser using a transmission type semiconductor saturable absorber
year: 2018

abstract: A diode end pumped continuous wave and passively Q switched mode locked Nd:(Gd0.3Y0.7)2SiO5 laser was designed. At a pump power of 0.8W, we achieve dual wavelength continuous wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM) we obtain passively Q switched mode locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4% The duration of the mode locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.
author_names: Zhen Tian

Beibei Wang

Congcong Gao

Qiang Wu

Xiaodong Xu

Jun Xu

Bingyuan Zhang
title: Passively Q Switched Mode Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror+
year: 2019

abstract: A dual wavelength mode locked semiconductor vertical external cavity surface emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two color pulses are modulated by a beat frequency in the terahertz range. Self starting mode locking with 0.8 W average output power is demonstrated.
author_names: Maik Scheller

Caleb W Baker

Stephan W Koch

Jerome V Moloney
title: Dual Wavelength Passively Mode Locked Semiconductor Disk Laser
venue: IEEE Photonics Technology Letters
year: 2016

abstract: A new diffusion bonded Nd:YVO4/Nd:GdVO4 hetero structure crystal with oblique interface between two vanadate materials is exploited to achieve dual wavelength passively mode locked laser with a semiconductor saturable absorber mirror. Experimental results show that the power ratio of the two emission wavelengths can be flexibly adjusted by controlling the vertical position of pump beam. In the optimally balanced dual wavelength operation, the maximum total output power of 2.5 W is obtained at an incident pump power of 11 W and the pulse width is measured to be 24.7 ps with pulse repetition rate of 296.6 MHz. The mode locked output pulse is further found to exhibit an optically beating with pulse duration of 1.8 ps at a repetition rate of 0.318 THz.
author_names: Hsin-Chih Liang

Tzu-Lin Huang

F L Chang

C L Sung

Yung-Fu Chen
title: Flexibly Controlling the Power Ratio of Dual Wavelength SESAM Based Mode Locked Lasers With Wedged Bonded Nd:YVO4/Nd:GdVO4 Crystals
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2018

abstract: We demonstrated a dual wavelength passively mode locked Nd:YSAG laser using a semiconductor saturable absorber mirror as the modulator. The maximum average output power was about 470 mW under the absorbed pump power of 4.2 W. The laser exhibited stable double wavelength synchronous mode locked oscillation at 1060.8 nm and 1063.2 nm. The pulsed repetition rate was about 87.4 MHz, and the single pulse energy was calculated to be 5.38 nJ. The envelope of the autocorrelation interference pattern presented a Gaussian pulse shape and the pulse width was about 3.8 ps. The beat pulse had a repetition rate of 0.67 THz and the beat pulse width was about 800 fs. Additionally, numerical simulation was conducted to analyze the autocorrelation trace.
author_names: Chao Feng

Huanian Zhang

Qingpu Wang

Jiaxiong Fang
title: Dual wavelength synchronously mode locked laser of a Nd:Y3ScAl4O12 disordered crystal
year: 2017

abstract: A diode pumped passively mode locked Nd:LGGG disordered crystal 1.3 mm laser has been experimentally demonstrated for the first time to our knowledge. With a semiconductor saturable absorber mirror (SESAM) stable synchronous continuous wave mode locking at two wavelengths was achieved. The mode locked pulse train has a repetition rate of 32 MHz and pulse duration of 4.55 ps, with a total average output power of 259 mW under an absorbed pump power of 5.48 W.
author_names: Ying Yang

Zhitai Jia

Jingliang He

Jin-long Xu

Baitao Zhang

Ruihua Wang

Xunmin Liu

Jia Hou

Fei Lou

Zhao-wei Wang

He Yang

Xutang Tao
title: Dual wavelength synchronously passively mode locked Nd:LGGG 1.3 mm laser with SESAM
year: 2013

abstract: We experimentally demonstrated dual wavelength synchronous operation of a high power passively mode locked 2 mm Tm:CaYAlO4 (Tm:CYA) disordered crystal laser with semiconductor saturable absorber mirror (SESAM) as mode locker. The mode locked laser emitted an average output power as high as 830 mW with pulse duration of 35.3 ps and repetition rate of 145.4 MHz. The mode locking dual wavelengths were centered at 1958.9 nm and 1960.6 nm, respectively. Autocorrelation trace clearly shows beating pulses with pulse width of 3.5 ps and repetition rate of 0.13 THz.
author_names: Lingchen Kong

Zhipeng Qin

Guoqiang Xie

X D Xu

J C Xu

Pengtao Yuan

Liejia Qian
title: Dual wavelength synchronous operation of a mode locked 2 mm Tm:CaYAlO4 laser.
venue: Optics letters
year: 2015

abstract: In this linear cavity passively mode locked laser based on semiconductor saturable absorber mirror, an Ybdoped fiber is shared by two branch cavities as gain medium. These two cavities can respectively output single wavelength pulse with the wavelength tuning range of 1 009.7 1 057.6 nm and 1 011.6 1 052.6 nm by adjusting volume Bragg grating. When two cavities output pulses together, the dual wavelength pulses with the maximum and minimum wavelength separation of 34.8 and 2.4 nm, respectively, are achieved by net gain equalization method to suppress mode competition at room temperature. The maximum pulse energies of dual wavelength pulses are 0.47 and 0.33 nJ separately; their repetition rates are 11.39 and 11.41 MHz.
author_names: Yangbo Bai

Wanghua Xiang

Peng Zu

Guizhong Zhang
title: Tunable dual wavelength passively mode locked Yb doped fiber laser using SESAM
year: 2012