Query: SiC EMI

Candidate papers:

abstract: Power electronics are crucial elements in more electric aircraft (MEA) applications. Existing hardware is almost exclusively silicon (Si) based. However, recent advances in semiconductor technology yielded silicon carbide (SiC) components with current ratings suitable for aerospace applications. These devices have much strength that can increase power density and improve performance over Si based hardware. High switching speeds are characteristic of SiC devices, and there is much concern about their impact on electromagnetic interference (EMI) This may necessitate larger EMI filters to comply with EMI standards, which would decrease power density and negate some of SiC's benefits. The following research explores the tradeoff between efficiency and EMI. It compares the performance of two high power three phase converters: one built from SiC MOSFETs and the other from Si IGBTs. The test setup consists of a 250 kW drive stand capable of sourcing and regeneratively sinking power as well as a 40 kVA aerospace rated machine. Experimental results are obtained at a bus voltage of 270 Vdc with power levels exceeding 1.5 p.u. The findings demonstrate comparable EMI performance for Si and SiC under MIL STD 461 with the SiC converter achieving higher efficiency.
author_names: Will Perdikakis

Mark J Scott

Kevin J Yost

Chase Kitzmiller

Bailey Hall

Katherine A Sheets
title: Comparison of Si and SiC EMI and Efficiency in a Two Level Aerospace Motor Drive Application
venue: IEEE Transactions on Transportation Electrification
year: 2020

abstract: In this paper, a preliminary PCB board for the electromagnetic interference (EMI) characterization of innovative silicon carbide (SiC) based switching devices is presented. Packaging technological issues can determine hurdles in the high frequency switching and high power regime where wide band gap semiconductors are intended today for Electric Vehicle (EV) applications. In particular, the parasitic inductances that emerge in such devices, must be assessed, by using e.g. EMI techniques. In this specific case, the EMI characterization is supposed to be carried out in a semi anechoic chamber, available at the University of Palermo (UNIPA) to assess the electromagnetic disturbances according to the levels of compliance indicated by the standards. The proposed prototype can work properly at the following levels of voltage, frequency and load power: 28.5 V, 2 MHz and 40 W. Details concerning the layout design and the prototype manufacturing are discussed.
author_names: Filippo Pellitteri

Massimo Caruso

Salvatore Stivala

Antonino Parisi

Vincenzo Vinciguerra

Angelo Alberto Messina

Guido Ala

Fabio Viola

Rosario Miceli

Alessandro Busacca
title: A prototypal PCB board for the EMI characterization of SiC based innovative switching devices
venue: 2020 IEEE 20th Mediterranean Electrotechnical Conference MELECON)
year: 2020

abstract: Abstract Although silicon carbide (SiC) devices can greatly improve the energy efficiency of electric motor drive systems and increase the power density of inverters as well in electric vehicle applications, fast switching and high frequency operations of the devices bring more serious electromagnetic compatibility (EMC) problems. It is very important to predict the electromagnetic interference (EMI) level of SiC motor drive systems at design phase. However, since the megahertz resonances caused by the system parasitic parameters can't be ignored, conventional EMI prediction methods need to be improved. In this paper, the fast switching transient of SiC devices, the power module parasitic parameters, and other detailed circuit parameters are modeled into the EMI sources and propagation paths. In the differential mode (DM) and common mode (CM) EMI sources modeling, both the equivalent switching current sources and the equivalent switching voltage sources of SiC devices are simultaneously taken into account. The proposed analytical method can accurately predict conducted EMI in the SiC motor drive system in frequency range from 150 kHz to 30 MHz. Compared with the previous conventional methods, the proposed method improves DM EMI prediction accuracy of the SiC motor drive system in high frequency range.
author_names: Zhuolin Duan

Xuhui Wen
title: A new analytical conducted EMI prediction method for SiC motor drive systems
year: 2020

abstract: The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high frequency (HF) electromagnetic interference (EMI) which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain source voltage of the SiC MOSFET (vds) phase to ground voltage of the motor (vphase) CM voltage (vcm) phase current of the motor (idm) and CM current (icm) it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.
author_names: Yingzhe Wu

Shan Yin

Hu Li

Minghai Dong
title: Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC Based Motor Drive
year: 2020

abstract: This paper investigates the system level conducted EMI model for SiC powertrain of electric vehicles. Firstly, a conducted EMI model for the whole powertrain is presented, which includes battery, inverter, PMSM, AC cables and DC cables. Then, a conducted emission test platform for EV powertrain is built to verify the system level EMI model. Finally, impact of system layout on EMI noise, including AC cable length, grounding schemes of AC and DC cable shielding layers, PWM schemes, and auxiliary power supply are investigated according to both proposed system level EMI model and experiment test results.
author_names: Xiaoyu Jia

Changsheng Hu

Bitao Dong

Fengchun He

Hui Wang

Dehong Xu
title: System Level Conducted EMI Model for SiC Powertrain of Electric Vehicles
venue: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
year: 2020

abstract: The SiC mosfet in the medium voltage direct current (MVdc) transportation electrification system features faster switching performance, while simultaneously binging more significant electromagnetic interference (EMI) issues within the rolling stocks, substations, and radiated disturbance into space along the catenaries and tracks. Due to the necessity to involve both the transient characteristics of power semiconductor devices and the stray parameters of all the equipment in the analysis of EMI, it is considerably challenging to perform wideband device level simulation on traditional commercial software for such a complex system with numerous trains and stations. A computationally efficient method for wideband modeling and simulation of the MVdc high speed railway system for the assessment of conducted EMI during the project design stage is proposed in this article. Physical characteristics of the semiconductor devices, parasitic parameters of the mosfet package, and converter topology are all taken into consideration to provide not only accurate system level performance of the system but also an insight into high frequency characteristics under different operation conditions. The calculation burden is alleviated by a hierarchical circuit partitioning architecture based on the frequency dependent time domain transmission line model and the Norton equivalent parameter extraction of each mosfet module to split the whole system into several smaller subcircuits in terms of matrix size, and a fully parallel implementation of the MVdc system is carried out on the graphics processor. The developed program is used to study the case of Jing Zhang high speed railway system topology, which is compatible to be modified to the MVdc project. Simulation results show that it is essential to estimate the EMI level comprehensively considering the alternative of speed and dc voltage.
author_names: Ruimin Zhu

Tian Liang

Venkata R Dinavahi

Guishu Liang
title: Wideband Modeling of Power SiC mosfet Module and Conducted EMI Prediction of MVDC Railway Electrification System
venue: IEEE Transactions on Electromagnetic Compatibility
year: 2020

abstract: This paper describes conducted Electromagnetic Interference (EMI) simulation of a buck converter using a compact model for an SiC MOSFET. The model simulates the peak values of leakage current flowing out of a heatsink ileak accurately since the model reproduces the experimental results of drain source voltage and its time derivative. In addition, the simulated spectrum of conducted disturbance voltage is in good agreement with the experimental one up to 20 MHz within a maximum error of 6 dB. From 20 to 30 MHz, the simulated spectrum shows the similar peak values to the experimental one with a little deviation in the resonant frequency. The simulated results indicate that the model would be a promising tool for conducted EMI analysis of the power converters using SiC MOSFETs.
author_names: Yuki Ishii

Shinobu Nagasawa

Takeshi Horiguchi

Yasushige Mukunoki

Takushi Jimichi

Masaki Kuzumoto

Makoto Hagiwara
title: Accurate Conducted EMI Simulation of a Buck Converter With a Compact Model for an SiC MOSFET
venue: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
year: 2020

abstract: version of this paper was presented at 9th International Conference on Advanced Technologies (ICAT'20) 10 12 August 2020, Istanbul, Turkey with the title of "Determination of Conducted Emi in Sic Based Dual Active Bridge Converter"
author_names: Samet Yalcin

Tuna Goksu

Selami Kesler

Okan Bingol
title: Determination of Conducted EMI in SiC Based Dual Active Bridge Converter
year: 2020

abstract: The combination of the Si IGBT and SiC MOSFET inside the Si/SiC hybrid switch will bring serious conducted electromagnetic interference (EMI) noise in the application of the power converters. Compared with the differential mode (DM) EMI noise, the common mode (CM) EMI noise has a greater impact on the total conducted EMI noise, and it is relatively difficult to suppress the common mode EMI noise. However, there is still lack of research on the CM EMI emission characteristics of Si/SiC hybrid switch based converters. In this paper, the CM EMI noise caused by the Si/SiC hybrid switch, Si IGBT, and SiC MOSFET are compared at first. Then, the influence of different current ratios of the Si/SiC hybrid switch on the CM EMI is analyzed.
author_names: Bo Hu

Zishun Peng

Pei Xiao

Yuxing Dai

Chao Zhang

Jun Wang
title: Comparative Analysis of CM EMI for Boost Converter Using Si/SiC hybrid switch
venue: 2020 IEEE 1st China International Youth Conference on Electrical Engineering (CIYCEE)
year: 2020

abstract: The motor drive is widely applied in industry applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved. However, the fast switching speed and serious switching ringing brought by SiC MOSFET can cause unwanted high frequency (HF) electromagnetic interference (EMI) which may significantly reduce the reliability of the motor drive in many aspects. In order to reveal mechanism of the EMI existing in the motor drive, this paper has analyzed the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET based on relative experiment results. Influences of motor impedance on EMI have been elaborated through spectra analysis of the drain source voltage of the SiC MOSFET, phase to ground voltage of the motor, CM voltage, phase current of the motor, and CM current. Additionally, impacts of switching performance of the SiC MOSFET on EMI are also discussed in detail. Based on the analysis above, the relationship between motor impedance, switching performance of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance in motor drive applications.
author_names: Yingzhe Wu

Shan Yin

Zhaoyi Liu

Haiqing Li

Kye Yak See
title: Experimental Investigation on Electromagnetic Interference (EMI) in Motor Drive Using Silicon Carbide (SiC) MOSFET
venue: 2020 International Symposium on Electromagnetic Compatibility EMC EUROPE
year: 2020