Query: microelectronic circuits and devices

Candidate papers:

abstract: 1. Review of Linear Circuit Theory. Kirchhoff's voltage and current laws. Voltage bus notation. Definition of voltage current characteristic. Superposition in linear circuits. Resistive circuits. Thevenin equivalent circuits. Norton equivalent circuits. Voltage and current division. Single time constant resistor capacitor circuits. 2. Operational Amplifiers. Integrated circuit operational amplifier. Simplified Op amp model. Simplified Op amp model. Ideal Op amp approximation. Linear op amp circuits. Nonlinear operational amplifier circuits. Nonideal properties of operational amplifiers. 3. Introduction to Nonlinear Circuit Elements. Basic properties of nonlinear elements. Graphical analysis with one nonlinear circuit element. Examples of two terminal nonlinear devices. Graphical method with time varying sources. Iterative mathematical solutions. Piecewise linear modeling of two terminal nonlinear devices. 4. Signal Processing and Conditioning with Two terminal Nonlinear Devices. The transfer characteristic. Clipping and limiting circuits. Rectifier circuits. Power supply circuits. Precision rectifier circuits. 5. Three Terminal Devices. Definition of a three terminal device. Field effect transistors. Bipolar junction transistor. Upward slope of transistor V 1 characteristics. Photonic devices. Temperature dependence of devices. Power limitations of device operation. 6. Basic Circuits Containing Three Terminal Devices. Inverter configuration. Voltage follower configuration. Current follower configuration. Operation in the digital regime. 7. Analog Amplification. Definition of a signal. Active and passive circuits. Biasing. Small signal modeling of analog circuits. Two port amplifier representation. 8. Differential Amplifiers. Basic differential amplifier topology. Differential and common mode signals. BJT differential amplifier. MOSFET and JFET differential amplifiers. Large signal performance of differential amplifiers. 9. Frequency Response and Time Dependent Circuit Behavior. Sources of capacitance and inductance in electronic circuits. Sinusoidal steady state amplifier response. Frequency response of circuits containing capacitors. Frequency response of the differential amplifier. Time response of electronic circuits. 10. Feedback and Stability. The negative feedback loop. General requirements of feedback circuits. Effects of feedback on amplifier performance. The four basic amplifier types. The four feedback topologies. Effect of feedback connections on amplifier port resistance. Examples of real feedback amplifiers. Feedback loop stability. 11. Multistage and Power Amplifiers. Input and output loading. Two port amplifier cascade. Multistage amplifier biasing. DC level shifting. Differential amplifier cascade. Power amplification output stages. Integrated circuit power amplifiers. Power devices. 12. Analog Integrated Circuits. Basic operational amplifier cascade. Case Study: The LM741 Bipolar operational amplifier. Case Study: A simple CMOS Operational Amplifier. 13. Active Filters and Oscillators. A simple first order active filter. Ideal filter functions. Second order filter responses. Active filter cascading. Magnitude and frequency scaling. Switched capacitor networks and filters. Oscillators. 14. Digital Circuits. Fundamental concepts of digital circuits. CMOS logic family. NMOS logic family. TTL logic family. Emitter coupled logic family. BiCMOS logic circuits. 15. Fundamentals of Digital Systems. Sequential logic circuits. Multivibrator circuits. Digital memory. Analog to digital interfacing. 16. Electronic Design. An overview of the design process. The tools of electronic design. Open ended design problems. Analog integrated circuit design problems. Appendix A: Physics of Semiconductor Devices. Electronic materials. Qualitative description of holes. Impurities. Carrier densities within a semiconductor. Current flow in a semiconductor. Diffusion gradient within a semiconductor. Derivation of the v i characteristic of the PN junction diode. The bipolar junction transistor. The metal oxide semiconductor field effect transistor. Appendix B: Semiconductor Device and Integrated Circuit Fabrication. An overview of the fabrication process. Epitaxial growth. Oxidation. Wafer doping. Film deposition. Wafer etching. Lithographic processing. A MOS fabrication sequence. A BJT fabrication sequence. Appendix C: Computer Aided Circuit Design Using SPICE and PSpice. Use of SPICE. Capabilities of SPICE and PSPICE. Circuit description. Types of analyses. Generating output. References. Appendix D: Resistor Color Codes and Standard Values. Appendix E: Suggestions for Further Reading. Appendix F: Answers to Selected Problems.
author_names: Mark Horenstein
title: Microelectronic circuits and devices
year: 1990

abstract: 1. Introduction. 2. Power Semiconductor Diodes and Circuits. 3. Diode Rectifiers. 4. Power Transistors. 5. DC DC Converters. 6. Pulse width Modulated Inverters. 7. Thyristors. 8. Resonant Pulse Inverters. 9. Multilevel Inverters. 10. Controlled Rectifiers. 11. AC Voltage Controllers. 12. Static Switches. 13. Flexible AC Transmission Systems. 14. Power Supplies. 15. DC Drives. 16. AC Drives. 17. Gate Drive Circuits. 18. Protection of Devices and Circuits. Appendices: Three phase Circuits, Magnetic Circuits, Switching Functions of Converters, DC Transient Analysis, Fourier Analysis, Thyristor Commutation Techniques, Data Sheets.
author_names: M H Rashid
title: Power Electronics: Circuits, Devices and Applications
year: 1993

abstract: MICROELECTRONIC device integration has progressed to the point where complete 'systems on a chip' have been realized1 3. Now that optoelectronics is becoming increasingly important for information and communication technologies, there is a need to develop optoelectronic devices that can be integrated with standard microelectronics. Conventional semiconductor technology is largely based on crystalline silicon, which (being an indirect bandgap semiconductor) is an inefficient light emitting material. This has stimulated significant effort towards developing silicon based optoelectronic components and, of the several strategies explored so far4,5, the use of porous silicon appears the most promising; porous silicon produces high efficiency, room temperature, visible photoluminescence6, and its material and optical properties have been studied in detail7,8. But the extreme reactivity and fragility of porous silicon have hitherto prevented its integration with conventional silicon processing technology. We have recently shown9,10 that the thermal and chemical stability of porous silicon can be greatly enhanced while retaining desirable light emitting and charge transport properties by partial oxidation. Here we take advantage of these improvements in material properties to demonstrate the successful integration of silicon based visible light emitting devices into a standard bipolar microelectronic circuit.
author_names: Karl D Hirschman

Leonid Tsybeskov

Siddhartha P Duttagupta

Philippe M Fauchet
title: Silicon based visible light emitting devices integrated into microelectronic circuits
venue: Nature
year: 1996

abstract: This preview guide presents the first 10 chapters of the our new title by Richard Jaeger: Microelectronic Circuit Design. This cutting edge new text develops a comprehensive understanding of the basic techniques of modern electronic circuit design, analog and digital, discrete and integrated. Digital electronics has evolved to be an extremely important area of circuit design, but it is included almost as an after thought in the majority of introductory electronics texts. This book presents a much more balanced coverage of analog and digital circuits. The writing integrates the author's extensive industrial backround in precision analog and digital design with his many years of experience in the classroom.
author_names: Richard C Jaeger

Travis N Blalock
title: Microelectronic Circuit Design
year: 1996

abstract: Negative mutual inductance results from coupling between two conductors having current vectors in opposite directions. As a quantity in electronic circuits, negative mutual inductance is usually so much smaller in magnitude than overall inductance that it can be neglected with little effect. In the microelectronic world, however, its neglect can result in inductance values as much as 30 percent too high. This paper derives inductance equations for planar thin or thick film coils, comparing equations that include negative mutual inductance with those that do not. It describes a computer program developed for calculating inductances for both square and rectangular geometries, the variables considered being track width, space between tracks, and number of turns. Graphic results are presented for up to 16 turns over an inductance range of 3 nanohenries to 10 microhenries. Although details of fabrication are not included, the effects of film thickness and frequency on the mutual inductance parameter are discussed.
author_names: H M Greenhouse
title: Design of Planar Rectangular Microelectronic Inductors
year: 1974

abstract: (NOTE: Each chapter concludes with Summary, References, and Problems. Preface. 1. An Overview of Microelectronic Fabrication. A Historical Perspective. An Overview of Monolithic Fabrication Processes and Structures. Metal Oxide Semiconductor (MOS) Processes. Basic Bipolar Processing. Safety. 2. Lithography. The Photolithographic Process. Etching Techniques. Photomask Fabrication. Exposure Systems. Exposure Sources. Optical and Electron Microscopy. Further Reading. 3. Thermal Oxidation of Silicon. The Oxidation Process. Modeling Oxidation. Factors Influencing Oxidation Rate. Dopant Redistribution During Oxidation. Masking Properties of Silicon Dioxide. Technology of Oxidation. Oxide Quality. Selective Oxidation and Shallow Trench Formation. Oxide Thickness Characterization. Process Simulation. 4. Diffusion. The Diffusion Process. Mathematical Model for Diffusion. The Diffusion Coefficient. Successive Diffusions. Solid Solubility Limits. Junction Formation and Characterization. Sheet Resistance. Generation Depth and Impurity Profile Measurement. Diffusion Simulation. Diffusion Systems. Gettering. 5. Ion Implantation. Implantation Technology. Mathematical Model for Ion Implantation. Selective Implantation. Junction Depth and Sheet Resistance. Channeling, Lattice Damage, and Annealing. Shallow Implantation. Source Listing 6. Film Deposition. Evaporation. Sputtering. Chemical Vapor Deposition. Epitaxy. Further Reading. 7. Interconnections and Contacts. Interconnections in Integrated Circuits. Metal Interconnections and Contact Technology. Diffused Interconnections. Polysilicon Interconnections and Buried Contacts. Silicides and Multilayer Contact Technology. The Liftoff Process. Multilevel Metallization. Copper Interconnects and Damascene Processes. Further Reading. 8. Packaging and Yield. Testing. Wafer Thinning and Die Separation. Die Attachment. Wire Bonding. Packages. Flip Chip and Tape Automated Bonding Processes. Yield. Further Reading. 9. MOS Process Integration. Basic MOS Device Considerations. MOS Transistor Layout and Design Rules. Complementary MOS (CMOS) Technology. Silicon on Insulator. 10. Bipolar Process Integration. The Junction Isolated Structure. Current Gain. Transit Time. Basewidth. Breakdown Voltages. Other Elements in SBC Technology. Layout Considerations. Advanced Bipolar Structures. Other Bipolar Isolation Techniques. BICMOS. 11. Processes for Microelectromechanical Systems MEMS. Mechanical Properties of Silicon. Bulk Micromachining. Silicon Etchants. Surface Micromachining. High Aspect Ratio Micromachining: The LIGA Molding Process. Silicon Wafer Bonding. IC Process Compatibility. Answers to Selected Problems. Index.
author_names: Richard C Jaeger
title: Introduction to microelectronic fabrication
year: 1987

abstract: Random device mismatch plays an important role in the design of accurate analog circuits. Models for the matching of MOS and bipolar devices from open literature show that matching improves with increasing device area. As a result, accuracy requirements impose a minimal device area and this paper explores the impact of this constraint on the performance of general analog circuits. It results in a fixed bandwidth accuracy power tradeoff which is set by technology constants. This tradeoff is independent of bias point for bipolar circuits whereas for MOS circuits some bias point optimizations are possible. The performance limitations imposed by matching are compared to the limits imposed by thermal noise. For MOS circuits the power constraints due to matching are several orders of magnitude higher than for thermal noise. For the bipolar case the constraints due to noise and matching are of comparable order of magnitude. The impact of technology scaling on the conclusions of this work are briefly explored.
author_names: Peter R Kinget
title: Device mismatch and tradeoffs in the design of analog circuits
venue: IEEE Journal of Solid State Circuits
year: 2005

abstract: Present polymeric microelectronic devices are typically unipolar devices, based on p type semiconducting polymers. Bipolar devices stable under ambient conditions are desirable, but have not yet been reported due to a lack of stable n type doped conducting polymers. Starting from the standard redox potentials of, especially, water and oxygen, stability requirements on electrode potentials of n type doped conducting polymers are derived. The predictions are then compared with experimental data on stability of conducting polymers. A good agreement is obtained. An electrode potential of about 0 to 0.5 V (SCE) is required for stable n type doped polymers, similar to the requirement on the electrode potential for stable undoped p type polymers. Consequences for bipolar devices are analysed. Huge overpotentials for the redox reaction with wet oxygen are required in order to realize thermodynamically stable bipolar devices from known doped p type and n type conducting polymers. Finally, possible solutions, accepting thermodynamic instability, are discussed.
author_names: Dago M de Leeuw

Maurice Maria Johannes Simenon

Adam R C Brown

R E F Einerhand
title: Stability of n type doped conducting polymers and consequences for polymeric microelectronic devices
year: 1997

abstract: Introduction Plasma and Its Classification Application of Low Temperature Plasma Academic Fusion References Phenomenological Description of the Charged Particle Transport Transport in Real (Configuration) Space Momentum Balance of Electrons Energy Balance of Electrons Transport in Velocity Space Electron Velocity Distribution and Swarm Parameters Ion Velocity Distribution and Mean Energy Thermal Equilibrium and its Governing Relations Boltzmann Distribution in Real Space Maxwell Distribution in Velocity Space References Macroscopic Plasma Characteristics Introduction Quasi Neutrality Charge separation In Plasmas Spatial Scale of Charge Separation Time Scale for Charge Separation Plasma Shielding Debye Shielding Metal Probe in a Plasma Particle Diffusion Ambipolar Diffusion Spatial and Time Scale of Diffusion Bohm Sheath Criterion Bohm Velocity Floating Potential References Elementary Processes in Gas Phase and on Surfaces Particles and Waves Particle Representation in Classical and Quantum Mechanics Locally Isolated Particle Group and Wave Packets Collisions and Cross Sections Conservation Laws in Collisions Definition of Collision Cross Sections The Distribution of Free Paths Representation of Collisions in Laboratory and CM Reference Frames Classical Collision Theory Scattering in Classical Mechanics Conditions for the Applicability of the Classical Scattering Theory Quantum Theory Of Scattering Differential Scattering Cross Section sigma(theta) Modified Effective Range Theory in Electron Scattering Collisions Between Electrons And Neutral Atoms/Molecules Resonant Scattering Electron Atom Collisions Energy Levels of Atoms Electron Atom Scattering Cross Sections Electron Molecule Collisions Rotational, Vibrational, and Electronic Energy Levels of Molecules Rotational Excitation Rotational Energy Levels Rotational Excitation Cross Sections Vibrational Excitation Vibrational Energy Levels Vibrational Cross Sections Electronic Excitation and Dissociation Electronic States of Molecules Cross Sections for Electronic Excitation of Molecules Electron Collisions with Excited Atoms and Molecules Nonconservative Collisions of Electrons With Atoms and Molecules Electron Induced Ionization Electron Attachment Dissociative Electron Attachment Nondissociative Electron Attachment Ion Pair Formation Electron Attachment to Excited Molecules Rate Coefficients for Attachment Electron Ion and Ion Ion Recombination Electron Ion and Electron Electron Collisions Heavy Particle Collisions Ion Molecule Collisions Charge Transfer, Elastic, and Inelastic Scattering of Ions Ion Molecule Reactions Collisions of Fast Neutrals Collisions of Excited Particles Chemi Ionization and Penning Ionization Collisions of Slow Neutrals and Rate Coefficients Quenching and Transport of Excited States Kinetics of Rotational and Vibrational Levels Photons in Ionized Gases Emission and Absorption of Line Radiation Resonant Radiation Trapping Elementary Processes at Surfaces Energy Levels of Electrons in Solids Emission of Electrons from Surfaces Photo Emission Thermionic Emission Field Induced Emission Potential Ejection of Electrons from Surfaces by Ions and Excited Atoms Emission of Ions and Neutrals from Surfaces Surface Neutralization Surface Ionization Adsorption References The Boltzmann Equation and Transport Equations of Charged Particles Introduction The Boltzmann Equation Transport in Phase Space and Derivation of the Boltzmann Equation Transport Coefficients The Transport Equation Conservation of Number Density Conservation of Momentum Conservation of Energy Collision Term In The Boltzmann Equation Collision Integral Collision Integral between an Electron and a Gas Molecule Elastic Collision Term Jelas Excitation Collision Term Jex Ionization Collision Term Jion Electron Attachment Collision Term Jatt Boltzmann Equation For Electrons Spherical Harmonics and Their Properties Velocity Distribution of Electrons Velocity Distribution under Uniform Number Density: g0 Velocity Distribution Proportional to rn(r, t) g1 Electron Transport Parameters References General Properties of Charged Particle Transport in Gases Introduction Electron Transport In DC Electric Fields Electron Drift Velocity Diffusion Coefficients Mean Energy of Electrons Excitation, Ionization, and Electron Attachment Rates Electron Transport in Radio Frequency Electric Fields Relaxation Time Constants Effective Field Approximation Expansion Procedure Direct Numerical Procedure Time Varying Swarm Parameters Ion Transport In Dc Electric Fields References Modeling of Nonequilibrium (Low Temperature) Plasmas Introduction Continuum Models Governing Equations of a Continuum Model Local Field Approximation (LFA) Quasi Thermal Equilibrium (QTE) Model Relaxation Continuum (RCT) Model Phase Space Kinetic Model Particle Models Monte Carlo Simulations (MCSs) Particle in Cell (PIC) and Particle in Cell/Monte Carlo Simulation (PIC/MCS) Models Hybrid Models Circuit Model Equivalent Circuit Model in CCP Equivalent Circuit Model in ICP Transmission Line Model (TLM) Electromagnetic Fields and Maxwell's Equations Coulomb's Law, Gauss's Law, and Poisson's Equation Faraday's Law Ampere's Law Maxwell's Equations References Numerical Procedure of Modeling Time Constant of the System Collision Oriented Relaxation Time Plasma Species Oriented Time Constant Plasma Oriented Time Constant/Dielectric Relaxation Time Numerical Techniques To Solve The Time Dependent Drift Diffusion Equation Time Evolution Method Finite Difference Digitalization and Stabilization Time Discretization and Accuracy Scharfetter Gummel Method Cubic Interpolated Pseudoparticle Method Semi Implicit Method for Solving Poisson's Equation Boundary Conditions Ideal Boundary Without Surface Interactions Dirichlet Condition Neumann Condition Periodicity Condition Electrode Surface Metallic Electrode Dielectric Electrode Boundary Conditions with Charge Exchange Boundary Conditions with Mass Transport Plasma Etching Plasma Deposition Plasma Sputtering Moving Boundary under Processing References Capacitively Coupled Plasma Radio Frequency Capacitive Coupling Mechanism of Plasma Maintenance Low Frequency Plasma High Frequency Plasma Electronegative Plasma Very High Frequency Plasma Two Frequency Plasma Pulsed Two Frequency Plasma References Inductively Coupled Plasma Radio Frequency Inductive Coupling Mechanism of Plasma Maintenance E mode and H mode Mechanism of Plasma Maintenance Effect of Metastables Function of ICP Phase Transition Between E Mode and H Mode in an ICP Wave Propagation in Plasmas Plasma and Skin Depth ICP and the Skin Depth References Magnetically Enhanced Plasma Direct Current Magnetron Plasma Unbalanced Magnetron Plasma Radio Frequency Magnetron Plasma Magnetic Confinements Of Plasmas Magnetically Resonant Plasmas References Plasma Processing and Related Topics Introduction Physical Sputtering Target Erosion Sputtered Particle Transport Plasma Chemical Vapor Deposition Plasma CVD Large Area Deposition with High Rate Plasma Etching Wafer Bias On Electrically Isolated Wafers (without Radio Frequency Bias) On Wafers with Radio Frequency Bias Selection of Feed Gas Si or Poly Si Etching Al Etching SiO2 Etching Feature Profile Evolution Plasma Bosch Process Charging Damage Surface Continuity and Conductivity Charging Damage to Lower Thin Elements in ULSI Thermal Damage Specific Fabrication of MOS Transistor Gate Etching Contact Hole Etching Low K Etching MEMS Fabrication References Atmospheric Pressure, Low Temperature Plasma High Pressure, Low Temperature Plasma Fundamental Process Historical Development Micro Plasma Radiofrequency Atmospheric Micro Plasma Source Gas Heating in a Plasma Effect of Local Gas Heating References Index
author_names: Toshiaki Makabe

Zoran Lj Petrovic
title: Plasma Electronics: Applications in Microelectronic Device Fabrication
year: 2006

abstract: Total ionizing dose radiation effects on the electrical properties of metal oxide semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation induced effects, their dependencies, and the many different approaches to their mitigation.
author_names: Harold L Hughes

J M Benedetto
title: Radiation effects and hardening of MOS technology: devices and circuits
year: 2003