Query: 520nm semiconductor laser

Candidate papers:

abstract: Various forms of light therapy have been practiced around the world for many years. Among them the laser therapy has experienced a prosperous development in recent years. More and more laser equipment has been used in this field. In this study, we present an optical pumped vertical external cavity surface emitting laser (OP VECSEL) system using semiconductor gain chip as the lasering material. Through carefully design of the semiconductor gain chip structure, the fundamental and frequency doubled laser emitting wavelength can be set to the range of 1040 1160nm and 520nm 580nm which is the mainly laser tissue interact wavelength range for laser therapy. In a flat concave short cavity laser assembly test, the maximum fundamental frequency output power of the system is 1.6W using a 2% output coupler. Through a frequency doubling crystal, the continuous output power of the yellow green light can achieve 24mW.
author_names: Jonathan Li

Chao Wang

Xin Wei

Chuanchuan Li
title: 530 580nm optical pumped vertical external cavity surface emitting lasers for laser therapy
venue: Applied Optics and Photonics China
year: 2020

abstract: We demonstrate 0.7W cw output power at 520nm from an intracavity frequency doubled optically pumped semiconductor disk laser at room temperature. High beam quality and optical conversion efficiency of 10% has been achieved.
author_names: S Lutgen

Michael Kuehnelt

Ulrich Steegmueller

Peter Brick

T F Albrecht

Wolfgang Reill

Johann Luft

Bernadette Kunert

S Reinhard

Kerstin Volz

Wolfgang Stolz
title: Green semiconductor disk laser with 0.7W cw output power
venue: SPIE OPTO
year: 2005

abstract: We demonstrate 0.7W cw output power at 520nm from an intracavity frequency doubled Optically Pumped Semiconductor Disk Laser at room temperature. High beam quality and optical conversion efficiency of 10% has been achieved.
author_names: S Lutgen

Michael Kuehnelt

Ulrich Steegmueller

Peter Brick

T F Albrecht

Wolfgang Reill

Johann Luft

Werner Spath

Bernadette Kunert

S Reinhard

Kerstin Volz

Wolfgang Stolz
title: 0.7W Green Frequency Doubled Semiconductor Disk Laser
year: 2005

abstract: oped room temperature blue and 'green' vertical cavity surface emitting lasers (VCSELs) "for the first time, by current injection" using nitride semiconductor technology for the active region [Daiji Kasahara et al, Appl. Phys. Express, vol4, p072103, 2011] The thresholds for some of the blue devices (451nm wavelength) and 'green' devices (503nm wavelength, actually more blue green, with true green starting at longer than 520nm) were measured, respectively, as 3.0 and 28kA/cm for current density (assuming uniform injection of 1.5 and 22mA over current aperture) and 3.3V and 6.3V for forward voltage. The current apertures for the blue and 'green' devices were 8mm and 10mm, respectively. While the blue device was subjected to continuouswave (CW) operation, the more challenging green device was only tested under pulsed operation (width/period 1/500msec) The maximum output power for the blue device was 0.7mW at 11mA. Within the limitations of the pulsed test set up, the maximum green output power is estimated at more than 0.8mW. The epitaxial material structures were grown on c plane gallium nitride (GaN) substrates using metal organic chemical vapor deposition (MOCVD) The active region consisted of indium gallium nitride (InGaN) wells in GaN barriers. Further processing to make the VCSEL (Figure 1) consisted of a series of steps involving lithography, sputtering, inductively couple plasma (ICP) reactive ion etching, wafer bonding, and chemical mechanical polishing (CMP) First, a current aperture was patterned, followed by application of an indium tin oxide (ITO) transparent conducting contact and current spreading layer, then an electrode around the current aperture. The backside mirror consisted of silicon dioxide/niobium pentoxide (SiO2/Nb2O5) layer pairs as a distributed Bragg reflector (DBR) The structure was then flipped and bonded onto a highly conductive silicon substrate. The GaN substrate and n type layer were then removed/thinned to create suitable cavities before the n type contact and another SiO2/Nb2O5 DBR. Further characterization of the devices involved looking at spectra below, near and above threshold and at the near field emission patterns. The 'green' device shifts its wavelength by about 4nm, going from 499nm to 503nm, in moving from spontaneous to stimulated emission. The researchers report: "This abnormal behavior of the laser emission peak may be due to refractive index changes induced by thermal effects. The characteristics of GaN based Technology focus: Nitride lasers
title: Nichia has made a VCSEL laser emitting blue light in continuous wave mode with power output of 0 7 mW at an injection current of 11 mA
year: 2011

abstract: We present the study on the dynamics of a semiconductor laser with a tunable Fabry Perot filter and a ring single mode fiber based long cavity. Theoretically and experimentally, we analyse dynamical regimes of the laser in various operation regimes, including stable and chaotic dynamics and the formation of coherent structures. The laser coherence build up is studied during the turn on, as well as different scenarios of coherence deterioration in such lasers are examined.
author_names: Svetlana Slepneva

Amy Roche

U Gouda

Alexander Pimenov

Anton Kovalev

M Marconi

M Giudici

Evgeny A Viktorov

Andrei G Vladimirov

Guillaume Huyet
title: Nonlinear Dynamics in a Long Cavity Semiconductor Laser
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: We demonstrate generation of "droplet" Bessel beams using semiconductor laser and an axicon with rounded tip. Interference of Bessel and Gaussian wave fronts leads to cancellation of side lobes of Bessel beam.
author_names: S H Abdulrazak

D V Chistyakov

Sergey N Losev

V Yu Myl'nikov

Yu M Zadiranov

N G Deryagin

Vladislav V Dudelev

Vladimir I Kuchinskii

Grigorii S Sokolovskii
title: Cancellation of side lobes in "droplet" Bessel beams generated with semiconductor laser
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: To reduce measurement error of laser thickness gauges and to provide reasons for the choice of acceptance angle for receiving the signal from the controlled surface, the value of a laser emitter signal was studied as the signal was reflected from the laser indicated spot on the rough surface of metal roll. The measurements were taken at different wavelengths. The position of the reflected signal receiver was being changed relative to the normal to the controlled surface.
author_names: V I Shlychkov
title: Application of semiconductor laser emitters to thickness measurements
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: We demonstrate a room temperature, continuous wave laser source providing 1 THz output by difference frequency generation in a periodically poled lithium niobate crystal using two serially connected similar semiconductor disk laser chips in one cavity for power scalability.
author_names: Heyang Guoyu

Ksenia A Fedorova

Christian Kriso

Matthias Wichmann

F Zhang

Wolfgang Stolz

Arash Rahimi-Iman
title: Room Temperature CW THz Emitting Two Chip Semiconductor Disk Laser
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: For the first time, an analysis of a series of laser heterostructures with different active region designs and cavity parameters is performed to solve the problem of generating sub ns pulses with different characteristics (duration and peak optical power) For the study, semiconductor lasers of a mesa stripe design with an aperture width of 100 mm and current pulses with a pulse base from 1 ns to 3 ns and an amplitude up to 50 A were used. It is shown that the minimum pulse width of the first relaxation peak was 50 ps at a peak power of up to 3 W with a combination of such parameters as a single QW, an optical confinement factor of 1.23 and a cavity length of 700 mm. The use of multiple quantum well heterostructures provided the generation of pulses with a peak power of up to 30 W and a pulse width of 100 200 ps.
author_names: Sergey O Slipchenko

Alexsandr Podoskin

Vyacheslav S Golovin

Viktor Shamakhov

I N Arsentiev

L S Vaviliva

Andrey V Lyutetskiy

Dmitriy N Nikolaev

Nikita A Pikhtin

P S Kopev
title: Design of semiconductor lasers for generation of high power sub ns laser pulses in the gain switching mode
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020

abstract: We present a compact picosecond hybrid laser for satellite ranging based on semiconductor DFB laser oscillator, Yb doped fiber and Nd:YVO4 bulk amplifiers. The output of 2.1 mJ, 25 ps pulses at 1 kHz repetition rate, 532 nm second harmonic wavelength with a near diffraction limited beam quality M2<1.5 was obtained, limits of peak power scaling in each amplifier were investigated.
author_names: I A Gorbunov

O V Kulagin
title: Picosecond hybrid laser based on semiconductor DFB laser, fiber and Nd:YVO4 amplifiers limits of output peak power scaling
venue: 2020 International Conference Laser Optics (ICLO)
year: 2020