Query: Interfacial Properties of Monolayer Antimonene Devices

Candidate papers:

abstract: As an emerging two dimensional (2D) semiconductor, monolayer antimonene think graphene, but made of Sb instead of C, and not so flat is of great potential for (opto)electronic devices. High quality electrode contact is critical to developing these devices. In this article, calculations of electronic structure and quantum transport are used to study the interfacial properties of antimonene metal contacts. This comprehensive investigation provides a theoretical basis for selecting favorable electrodes in 2D antimonene devices. The optimal $n$ type electrode is 2D Hf$}_{2}$N(OH)}_{2} while the optimal $p$ type electrode is graphene Pt, both of which provide Ohmic contact.
author_names: Han Zhang

Junhua Xiong

Meng Ye

Jingzhen Li

Xiuying Zhang

Ruge Quhe

Zhigang Song

Jinbo Yang

Qiaoxuan Zhang

Bowen Shi

Jiahuan Yan

Wanlin Guo

John Robertson

Feng Pan

Jing Lu
title: Interfacial Properties of Monolayer Antimonene Devices
venue: Physical Review Applied
year: 2019

abstract: Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.
author_names: Xu Wu

Yan Shao

Hang Liu

Zili Feng

Ye-Liang Wang

Jia-Tao Sun

Chen Liu

Jiaou Wang

Zhu Liu

Shiyu Zhu

Yu-qi Wang

Shixuan Du

You-Guo Shi

Kurash Ibrahim

Hongjun Gao
title: Epitaxial Growth and Air Stability of Monolayer Antimonene on PdTe2.
venue: Advanced materials
year: 2017

abstract: Antimonene based 2D materials are attracting increasing research interest due to their superior physicochemical properties and promising applications in next generation electronics and optoelectronics devices. However, the semiconductor properties of antimonene are still at the theoretical simulation stage and are not experimentally verified, significantly restricting its applications in specific areas. In this study, the semiconductor properties of monolayer antimonene nanosheets are experimentally verified. It is found that the obtained semiconductive antimonene nanosheets (SANs) exhibit indirect bandgap properties, with photoluminescence (PL) bandgap at about 2.33 eV and PL lifetime of 4.3 ns. Moreover, the obtained SANs are ideal for the hole extraction layer in planar inverted perovskite solar cells (PVSCs) and significantly enhance the device performance due to fast hole extraction and efficient hole transfer at the perovskite/hole transport layer interface. Overall, these findings look promising for the future prospects of antimonene in electronics and optoelectronics.
author_names: Fan Zhang

Junjie He

Yuren Xiang

Kai Zheng

Bin Xue

Shuai Ye

Xiao Peng

Yuying Hao

Jiarong Lian

Pengju Zeng

Junle Qu

Jun Song
title: Semimetal Semiconductor Transitions for Monolayer Antimonene Nanosheets and Their Application in Perovskite Solar Cells.
venue: Advanced materials
year: 2018

abstract: Group V elemental monolayers were recently predicted to exhibit exotic physical properties such as nontrivial topological properties, or a quantum anomalous Hall effect, which would make them very suitable for applications in next generation electronic devices. The free standing group V monolayer materials usually have a buckled honeycomb form, in contrast with the flat graphene monolayer. Here, we report epitaxial growth of atomically thin flat honeycomb monolayer of group V element antimony on a Ag(111) substrate. Combined study of experiments and theoretical calculations verify the formation of a uniform and single crystalline antimonene monolayer without atomic wrinkles, as a new honeycomb analogue of graphene monolayer. Directional bonding between adjacent Sb atoms and weak antimonene substrate interaction are confirmed. The realization and investigation of flat antimonene honeycombs extends the scope of two dimensional atomically thick structures and provides a promising way to tune topological properties for future technological applications.
author_names: Jiaou Wang

Kurash Ibrahim

Jia-Tao Sun

Ye-Liang Wang
title: Epitaxial Growth of Flat Antimonene Monolayer: A New Honeycomb Analogue of Graphene.
venue: Nano letters
year: 2018

abstract: The integration of two dimensional (2D) materials with III V semiconductor surfaces leads to the formation of 2D/3D van der Waals (vdW) heterostructures without the constraint of lattice matching, which offers new opportunities to improve electronic and optoelectronic properties. Here we explore the structural, electronic, and optical properties of various potential Sb/GaAs heterostructures consisting of a Sb monolayer (i.e. antimonene) on GaAs(111) substrates by using first principles calculations within the density functional theory. Our results demonstrate that the vdW interaction is crucial for the stability of Sb/GaAs heterointerfaces, but the interfacial coupling strength and band structure characteristics of the heterostructures are strongly affected by the interface structures. We find that all stable Sb/GaAs heterostructures exhibit a type II band alignment and have relatively small band gaps (0.71 1.39 eV) as compared to those of the independent Sb monolayer and GaAs substrates. Moreover, the formation of Sb/GaAs vdW heterostructures can lead to the separation of carriers and a high optical absorption coefficient in the visible light range, which makes Sb/GaAs heterostructures a potential candidate for optoelectronic devices, such as solar cells.
author_names: Ning Wang

Dan Cao

Jun Wang

Pei Liang

Xiaoshuang Chen

Haibo Shu
title: Interface effect on electronic and optical properties of antimonene/GaAs van der Waals heterostructures
year: 2017

abstract: Recently, arsenene monolayer structure of the arsenic with two phases has displayed semiconducting behavior. We have systematically investigated the electronic and optical properties of single layer arsenene with two types of functionalized organic molecules; an electrophilic molecule [tetracyanoquinodimethane (TCNQ) and a nucleophilic molecule [tetrathiafulvalene (TTF) as an electron acceptor and electron donor, respectively. The interfacial charge transfer between the arsenene monolayer and TCNQ/TTF molecules extensively reduces the band gap of arsenene and accordingly resulted in a p or n type semiconducting behavior, respectively. We have also performed the interfacial charge transfer from organic molecules to monolayer arsenene and vice versa. The interfacial surface molecular modification has established an efficient way to develop the light harvesting of arsenene in different polarization directions. Our theoretical investigation suggests that such n and p type arsenene semiconductors would broaden the applications in the field of nanoelectronic and optoelectronic devices such as photodiodes and it is also useful for constructing functional electronic systems.
author_names: Deobrat Singh

Sanjeev K Gupta

Yogesh Sonvane

Satyaprakash Sahoo
title: Modulating the electronic and optical properties of monolayer arsenene phases by organic molecular doping.
venue: Nanotechnology
year: 2017

abstract: The interfacial properties of b12 phase borophene contacts with other common two dimensional materials (transition metal dichalcogenides, group IV enes and group V enes) have been systematically studied using a density functional theory (DFT) method. The zero tunneling barrier is found for all of the investigated b12 phase borophene contacts except for the case of b12 borophene/graphene. The chemically reactive properties and high work function (4.9 eV) of the stable b12 borophene lead to the formation of Ohmic contacts with silicene, germanene, stanene, black phosphorene, arsenene and antimonene. The advantage of the zero tunnel barrier remains when changing the borophene from the b12 phase to the D phase. Therefore, a high carrier injection rate is expected in these borophene contacts. Our study provides guidance on borophene for future two dimensional materials based device designs.
author_names: Jie Yang

Ruge Quhe

Shenyan Feng

Qiaoxuan Zhang

Minglong Lei

Jing Lu
title: Interfacial properties of borophene contacts with two dimensional semiconductors.
venue: Physical chemistry chemical physics PCCP
year: 2017

abstract: Arsenene, arsenic analogue of graphene, as an emerging member of two dimensional semiconductors (2DSCs) is quite promising in next generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S 0.33) with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.
author_names: Meng Ye

Mouyi Weng

Jingzhen Li

Xiuying Zhang

Han Zhang

Ying Guo

Yuanyuan Pan

Linhong Xiao

Junku Liu

Feng Pan

Jing Lu
title: Electrical Contacts in Monolayer Arsenene Devices.
venue: ACS applied materials interfaces
year: 2017

abstract: Two dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.
author_names: Wenhan Zhou

Jiayi Chen

Pengxiang Bai

Shiying Guo

Shengli Zhang

Xiufeng Song

Lijuan Tao

Haibo Zeng
title: Two Dimensional Pnictogen for Field Effect Transistors
venue: Research
year: 2019

abstract: The growth and exfoliation of two dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non parabolic dispersion and strong spin orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX 2 (with M Mo, W and X S, Se, Te) and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.
author_names: Oscar Avalos-Ovando

Diego Mastrogiuseppe

Sergio E Ulloa
title: Lateral heterostructures and one dimensional interfaces in 2D transition metal dichalcogenides.
venue: Journal of physics. Condensed matter an Institute of Physics journal
year: 2019