Query: DC-DC power amplifier

Candidate papers:

abstract: The development of wide band gap semiconductor devices is rapidly promoting the development of power electronics technology, especially in high frequency (HF) power converter region. A category of HF power converter is switch mode power amplifier (PA) This paper focuses on the implementation of a multiphase dc dc PA with high bandwidth and high power rate. When naturally sampled phase shifted carrier modulation is implemented in the practical digital control system to control this HF power converter, the pulsewidth error problem caused by limited domain frequency of control chip becomes much severer. As a result, dc voltage component of each phase becomes different under several conditions, leading to current imbalance among phase inductors. This paper analyzes this problem and proposes a sensorless control method to solve it, based on the injection of random sequence in reference wave. A four phase prototype employing GaN devices is fabricated, switching at 1 MHz. Current imbalance and effectiveness of the proposed control method are verified by experimental results. The prototype is capable of uniformly amplifying sine signal within 200 kHz and a 350 kHz bandwidth random signal, with peak output power up to 810 W.
author_names: Chao Wang

Kui Wang

Zedong Zheng

Kai Sun

Yongdong Li
title: Modulation Induced Current Imbalance and Its Sensorless Control of a GaN Based Four Phase DC DC Power Amplifier
venue: IEEE Transactions on Industrial Electronics
year: 2020

abstract: In this paper a DC DC power converter design suitable for high frequency applications by using class E power amplifier (Inverter) instead of using small battery values choosing radio frequency(RF) values and getting high efficiency of output voltage and maximum of current and voltage values between 0 9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.
author_names: Sriram Muthukumar

M C John Wiselin

Durai Kanchana

Balakrishnapillai Suseela Sreeja
title: Design of DC DC Power Converter Using Power Amplifier
year: 2020

abstract: This paper presents the use of envelope tracking in class D digital audio amplifiers supplied through step up DC DC converters as applied in automotive, battery operated, and portable devices. It is shown that envelope tracking offers significant improvements in efficiency of up to 26% for the class D stage of a 100 W amplifier in a typical usage scenario, with a corresponding overall system improvement of up to 27% including a boost converter. Detailed simulation results of the complete system are presented, as well as experimental results performed on an existing 100 W class D amplifier design. Efficiency versus power results are combined with music power distribution profiles to simulate typical usage cases. Challenges relating to envelope tracking and DC DC converter control are discussed. It is concluded that there is significant potential for envelope tracking to provide improvement over the standard fixed supply amplifier design especially at low power, where the amplifier is normally used most.
author_names: Robert Bakker

Maeve Duffy
title: Improving the efficiency of class D audio amplifier systems using envelope tracking DC DC power supplies
venue: 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
year: 2018

abstract: A commercial off the shelf GSM PA powered directly from a DC DC converter is presented. The converter is implemented in 0.35 mm CMOS and employs frequency hopping with phase chopping to eliminate spurious noise. Measurement results demonstrate elimination of spurs, allowing an incompliant GSM PA that is violating the limits of the GSM spectral mask by 9.3 dB to be brought back to compliance without additional filtering or linear regulation between the converter and the PA.
author_names: Chengwu Tao

Ayman A Fayed
title: A GSM Power Amplifier Directly Powered From a DC DC Power Converter
venue: IEEE Microwave and Wireless Components Letters
year: 2012

abstract: This paper presents a power amplifier (PA) based on a boosted supply voltage using a boost DC DC converter to eliminate the load impedance matching network for handset applications. With appropriate transistor size and boosted collector/drain voltage, the optimum load impedance of the PA can be around 50 O to have a required output power level. As a result, loss and bandwidth limitation from the output matching network can be greatly mitigated. In addition, efficiency improvement at low output power level can be obtained by decreasing the output voltage of the boost DC DC converter, which is an average power tracking (APT) operation. To prove the proposed concept, the PA with a boost DC DC converter was implemented for the 1.88 GHz band. Using a 16 QAM uplink LTE signal with a peak to average power ratio (PAPR) of 7.2 dB and a channel bandwidth of 5 MHz, the PA with a drain supply voltage of 12 V exhibited an output power of 27.8 dBm, a power added efficiency (PAE) of 41.3% and power gain of 12.5 dB for the given adjacent channel leakage power ratio (ACLR) of 30 dBc. For a supply voltage of 4 V from the DC DC converter, a high PAE of 33.8% is maintained for a back off output power of 18.3 dBm.
author_names: Wonseob Lim

Hwiseob Lee

Hyunuk Kang

SooHo Cho

Youngoo Yang
title: Power amplifier based on 50 Load impedance using boost DC DC converter for APT
venue: 2015 Asia Pacific Microwave Conference (APMC)
year: 2015

abstract: AlGaN/GaN HEMTs show low on state resistance and small gate capacitances, which makes them good candidates for switching applications. Up to now, their exploitations in dc/dc converters have been largely investigated in high power electronics but with switching frequencies under 1 MHz. In this brief, the potentialities of GaN HEMTs are investigated for high speed dc/dc converters. To this aim, a 10 MHz GaN 16 34 V boost converter with above 90% efficiency is presented. Such converters are well suited for high efficiency power amplifiers based on dynamic bias control for high peak to average power ratio applications.
author_names: Florent Gamand

Ming Dong Li

Christophe Gaquiere
title: A 10 MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications
venue: IEEE Transactions on Circuits and Systems II: Express Briefs
year: 2012

abstract: This paper proposes a soft start method with the features of a small on chip capacitor and start stability for dc dc converters. During the soft start process, a slowly and linearly ramped up voltage reference is generated based on the principle of the small on chip capacitor charged by an oscillator controlled pulse current to replace the normal reference. Meanwhile, the switching frequency is also reduced so that the inductor current has more time to decay and massive inrush current can be avoided. However, in this way, the system may be unstable in that the bandwidth could not keep less than 1/7 of the reduced switching frequency. In this paper, an error amplifier (EA) with gain degeneration is proposed to solve this problem. When the switching frequency is reduced, the gain of the EA is also reduced and the bandwidth becomes narrower accordingly. A dc dc converter using the proposed soft start method has been implemented with a 0.5 mm CMOS process. Experimental results show that a soft start period of 600 ms is achieved with an on chip capacitor of 15 pF. Furthermore, both the output voltage and inductor current rise smoothly without oscillation and overshoot during the startup process.
author_names: Hongyi Wang

Yanzhao Ma

Jun Cheng
title: Soft Start Method With Small Capacitor Charged by Pulse Current and Gain Degeneration Error Amplifier for On Chip DC DC Power Converters
venue: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
year: 2013

abstract: Ilham Setiya Wardani, Saiful Manan in this paper explain that Utilization of power electronics components in the process of conversion of electrical energy has been growing from year to year. for controlling power from one form to another is very important and the characteristics of the equipment of power electronics has allowed it. DC DC converters can also be called a wave DC inverter capable of producing symmetrical widely used and applied in industry and everyday life.In the inverter power supply are made using half bridge converter topology. Half bridge converter topology has several advantages that are easy to create and output a lot easier in the controlling. The process of switching at the half bridge converter using mosfet IRFZ44N and executed using ICTL494.In the design of the tool, using the supply is 12 Volt DC that directly goes to IC TL494 and frequency output that is generated directly toward the driver mosfet with the type BC327 used to mesaklarkan mosfet by means of on off alternately to supply the power transformer intiferit to raise the voltage to 26 volt AC that will be rectified by using fast diode recofery MUR1560 to rectify the AC into DC voltage with the output voltage of 26 volts DC. Keywords: power supply, inverter, TL494 References Barkhordarian, V. Power MOSFET Basics. International Rectifier California. E book www.aosmd.com Didownload pada april 2016. Pukul 21.15 WIB. Hermawan, H. Rancang Bangun Sistem Kendali High Frequency Induction Heating Skripsi S1 Teknik Elektro. Jakarta: Universitas Indonesia. Malvino 1995. Prinsip prinsip Elektronika Jakarta Erlangga. Maruitula, Edison. 2011. Rancang Bangun Flyaback Regulator Untuk Mencatu Sistem Pensaklaran IGBT pada Invereter Skripsi S1 Teknik Elektro .Depok Unversitas Indonesia. Muis, Saludin. 2013. Perancangan Teori Dan Praktis Power Supply Jenis Switch Mode Yogyakarta Graha Ilmu. Rasyid, Muhammad H. 1999. Elektronika Daya Jakarta PT Prenhallindo.
author_names: Ilham Setiya Wardani

Saiful Manan
title: POWER SUPPLY INVERTER DC DC SEBAGAI SUPPLY AUDIO AMPLIFIER
year: 2016

abstract: This letter presents a resonant tunneling diode (RTD) based microwave amplifier operating at deep sub milliwatt level dc power. The fabricated amplifier, which is based on a reflection type amplifying topology and uses an InP monolithic microwave integrated circuit technology, shows extremely low dc power consumption of 125 mW with a gain of more than 10 dB at 5.7 GHz. The amplifier performance is mainly enabled by the favorable characteristics of the 0.9 mm InP based RTDs biased at VBIAS 0.36 V. The RTDs exhibit a high peak to valley current ratio (PVCR) of 11.2 with a low peak current (IP) of 430 mA and thereby a relatively low negative resistance magnitude of 480 O. The dc power consumption is about 6.4 times lower than that in transistor based low power amplifiers reported to date for the 5 GHz frequency band.
author_names: Jongwon Lee

Jooseok Lee

Kyounghoon Yang
title: Reflection Type RTD Low Power Amplifier With Deep Sub mW DC Power Consumption
venue: IEEE Microwave and Wireless Components Letters
year: 2014

abstract: Forward converter is one of the most studied topologies due to its lower ripple, lower parts count and hence high reliability. Owing to the need of miniaturization of Inertial Navigation System, a mini power module had to be developed for which forward converter topology was selected. A configuration of grouping the outputs into HMCS was attempted. The converter for DTG servo power amplifier had to supply the current demanded by the sensor electronics which is dynamic. Interleaved forward converter provides a better solution to satisfy the increased power and dynamic load conditions. As an added advantage, though one portion gets faulty, the other portion can provide half the maximum load, giving continuous power. The paper discusses the benefits of interleaving in the converter supplying the servo power amplifier experiencing dynamic load conditions and simulations for both single and interleaved converter design validation.
author_names: Sanjna Salim
title: Fault Tolerant DC DC Converter for DTG Servo Power Amplifier Supply
year: 2014