Query: Gallium oxide materials and devices

Candidate papers:

abstract: Gallium oxide has recently been found to be of high interest as the widest bandgap semiconductor for which single crystals bulk substrates are available and whose electronic conductivity can be controlled by n type doping. Because wide bandgap semiconductors lead to high breakdown voltages in small length scales, and the resistive losses over small length scales are low, the material has several attractive attributes for high voltage electronic diodes and switches. In this chapter, I give a personal account of the materials science and physics of this exciting new semiconductor material and its initial use in device demonstrations. The intention of the personal account is to share the twisted and connected paths that lead one to a specific research direction this is certainly true for how I ended up being interested in gallium oxide as an interesting semiconductor material.
author_names: Debdeep Jena
title: Gallium Oxide Materials and Devices
year: 2020

abstract: Beta gallium oxide (Ga2O3) has received much attention recently as a viable candidate for the nextgeneration material for power electronics and photonic applications, with its unique advantages, such as the wide bandgap 4.9 eV) high breakdown voltage, and optical transparency up to UV range. Recent advances in high quality Ga2O3 thin film growth, such as using molecular beam epitaxy or chemical vapor deposition, combined with the material's availability as inexpensive bulk substrates have opened new exciting opportunities for the fabrication of novel Ga2O3 devices. Despite the advances, many of the fundamental properties of Ga2O3 are yet to be understood clearly. As in many other oxide based transparent semiconductors, point defects and their complexes can dictate the properties of Ga2O3. Various spectroscopic methods as well as theoretical calculations have provided useful insights on the nature of the point defects and complexes in Ga2O3. Regardless, what has been missing in the field is the detailed information on the atomic scale structure of the defects and complexes in Ga2O3. Such information is crucial to determine how the atomic scale defects relate to many of the unanswered questions regarding the unique properties of Ga2O3, including how point defects and impurity atoms influence the formation of trap states, how the dopant atoms are compensated, and what is the exact origin of the difficulty in doping of Ga2O3 (especially p type)
author_names: Jared M Johnson

Hsien-Lien Huang

Jinwoo Hwang
title: Point Defects and Complexes in Gallium Oxide Materials and Devices
venue: Microscopy and Microanalysis
year: 2020

author_names: Stephen J Pearton

Fan Ren

Jihyun Kim

Michael Stavola

A Y Polyakov
title: Radiation damage in gallium oxide materials and devices
year: 2020

abstract: In this talk, we provide an overview overview of our work on beta Ga2O3 growth, doping, heterostructures and devices. In plasma assisted MBE growth of beta Ga2O3 we demonstrate the differences in growth on cleavage (e.g. (100) vs. non cleavage planes (e.g. (010) or (001) the propensity for growth rate limitations by suboxide formation. We demonstrate unintentional doping concentration in the mid10E15 cm 3 range, and controllable intentional doping with electron concentrations from 10E16 to >10E20 cm 3. We review the development and characterization of coherent (Al,Ga)2O3/Ga2O3 heterostructures and demonstration of modulation doping and MODFETs.
author_names: James S Speck
title: Progress in beta gallium oxide materials and devices (Conference Presentation)
year: 2018

abstract: This introductory chapter provides current and comprehensive information about gallium oxide, covering crystal structures, basic physical properties, bulk melt growth and thin film epitaxial growth methods, and representative electrical and optical devices.
author_names: Masataka Higashiwaki

Shizuo Fujita Editors

Shizuo Fujita
title: Gallium Oxide: Materials Properties, Crystal Growth, and Devices
year: 2020

abstract: Gallium Oxide is an ultra wide band gap semiconductor that provides key benefits for high performance power devices, including high electric breakdown field strength, good transport properties, well controlled doping, and large area melt grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.
author_names: Zhanbo Xia

Nidhin Kurian Kalarickal

Siddharth Rajan
title: Materials and Device Engineering for High Performance Gallium Oxide Devices
venue: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
year: 2020

author_names: Fan Ren

Rajendra Singh

Stephen J Pearton

Jihyun Kim

A Y Polyakov

Steven A Ringel

Renxu Jia
title: Preface JSS Focus Issue on Gallium Oxide Based Materials and Devices
year: 2019

author_names: Shoya Fujita
title: Evolution and Prospects of Gallium Oxide Based Materials and Power Devices
year: 2018

author_names: Debdeep Jena
title: Invited) Gallium Oxide Based Materials and Devices
year: 2016

author_names: Xutang Tao

Jiandong Ye

Shibing Long

Zhitai Jia
title: Preface to the Special Issue on Ultra Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices
year: 2019