Query: Crystal growth Handbook

Candidate papers:

abstract: Crystals are fascinating objects and this two volume handbook deals with the fundamental aspects of crystal growth: the part A deals with thermodynamics and kinetics, while part B deals with transport and stability. As the preface of the volume indicates, there are three facets, namely, the art, the science and the technology to growing crystals; this book, with the emphasis on the fundamentals, deals with the scientific aspects with a strong emphasis on applications. The scientific aspects of crystal growth are varied, complex and cover a wide range of areas, issues, problems and techniques. This handbook consists of 26 chapters and deals with (a) the thermodynamic and kinetic aspects such as phase equilibria, equilibrium shapes, nucleation, growth, rough smooth transition, (b) transport and stability aspects such as morphological stability, dendrites, grain growth and crystallisation, and, (c) modelling aspects such as ab initio, density functional theory, Monte Carlo simulations and phase field models. There are also a wide variety of materials that are dealt with including ice and snow, proteins, pharmaceutical crystals, colloids, alloys, silicon, semiconductor nanocrystals, quasicrystals and oxides. The first chapter of the handbook on the historical aspects serves as a nice starting point for many of these chapters that follow. The handbook deals with the theoretical and computational aspects as well as experiments of crystal growth in a very comprehensive and authoritative manner. The chapters are written in a lucid style and are easy to understand. The mathematical derivations are given in good amount of detail, making it easy to follow the logic and algebra. There are a large number of figures, diagrams and images in each chapter which helps in developing a clear understanding of the subject matter at hand. Finally, each chapter contains a large number of references and many of the chapters end with open questions and concluding remarks indicating future directions of research. The production quality of the book is good. On the whole, the book, in addition to being a handy reference for researchers working in the area, will also be a very good read to beginning graduate students working on different aspects of crystal growth and will make a good addition to libraries in, and catering to, departments of physics, chemistry, materials, earth and medical sciences, and other allied areas. Some chapters of the books will also be handy to those teachers teaching graduate level courses in materials science, solidification and crystal growth. Hence, I have no hesitations in recommending the book.
author_names: Mogadalai P Gururajan
title: Handbook of crystal growth, 2nd edition: Fundamentals IA: thermodynamics and kinetics Fundamentals IB: transport and stability (two book set) edited by T. Nishinaga
year: 2017

author_names: Helmut Klapper
title: Springer Handbook of Crystal Growth ReadingSample
year: 2017

author_names: Hiromoto Susawa
title: Reconsideration of Chapter 7 Crystal Growth in Oyobutsuri Handbook etc.
year: 2015

author_names: Govindhan Dhanaraj

Kullaiah Byrappa

Vishwanath Prasad

Michael Dudley
title: Springer handbook of crystal growth
year: 2010

abstract: This chapter covers the field of bulk single crystals of materials used in electronics and optoelectronics. These crystals are used in both active and passive modes, that is, to produce devices directly in/on bulk grown slices of material, or as substrates in epitaxial growth, respectively. Single crystal material usually provides superior properties to polycrystalline or amorphous equivalents. The various bulk growth techniques are outlined, together with specific critical features, and examples are given of the types of materials, and their current typical sizes, grown by these techniques. Materials covered range from group IVs (Si, Ge, SiGe, diamond, SiC) group III Vs (e. g. such as GaAs, InP, nitrides, etc. group II IVs (e. g. CdTe, ZnSe, HgCdTe (MCT) etc. through to a wide range of oxide/halide/phosphate/borate/tungstate materials. This chapter is to be treated as a snapshot only; the interested reader is referred to the remainder of the chapters in this handbook for more specific growth and characterization details on the various materials outlined in this chapter. Neither does this chapter cover the more fundamental aspects of the growth of the particular materials covered; again the reader is referred to relevant chapters within the handbook, or to other sources of information in the general literature.
author_names: Peter Capper
title: Bulk Crystal Growth: Methods and Materials
year: 2017

abstract: This chapter covers the field of bulk single crystals of materials used in electronics and optoelectronics. These crystals are used in both active and passive modes, that is, to produce devices directly in/on bulk grown slices of material, or as substrates in epitaxial growth, respectively. Single crystal material usually provides superior properties to polycrystalline or amorphous equivalents. The various bulk growth techniques are outlined, together with specific critical features, and examples are given of the types of materials, and their current typical sizes, grown by these techniques. Materials covered range from group IVs (Si, Ge, SiGe, diamond, SiC) group III Vs (e.g. such as GaAs, InP, nitrides, etc. group II IVs (e.g. CdTe, ZnSe, HgCdTe (MCT) etc. through to a wide range of oxide/halide/phosphate/borate/tungstate materials. This chapter is to be treated as a snapshot only; the interested reader is referred to the remainder of the chapters in this handbook for more specific growth and characterization details on the various materials outlined in this chapter. Neither does this chapter cover the more fundamental aspects of the growth of the particular materials covered; again the reader is referred to relevant chapters within the handbook, or to other sources of information in the general literature. 12.1 Background. 269
author_names: Peter Capper
title: Bulk Crystal G 269 Part B 12 1 12 Bulk Crystal Growth Methods and Materials
year: 2017

abstract: This title covers quartz, zeolites, gemstones, perovskite type oxides, ferrite, carbon allotropes, complex coordinated compounds and many more products now being produced using hydrothermal technology. "Handbook of Hydrothermal Technology" brings together the latest techniques in this rapidly advancing field in one exceptionally useful, long needed volume. The handbook provides a single source for understanding how aqueous solvents or mineralizers work under temperature and pressure to dissolve and recrystallize normally insoluble materials, and decompose or recycle any waste material. The result, as the authors show in the book, is technologically the most efficient method in crystal growth, materials processing, and waste treatment.The book gives scientists and technologists an overview of the entire subject including: Evolution of the technology from geology to widespread industrial use; Descriptions of equipment used in the process and how it works; Problems involved with the growth of crystals, processing of technological materials, environmental and safety issues; and Analysis of the direction of today's technology. In addition, readers get a close look at the hydrothermal synthesis of zeolites, fluorides, sulfides, tungstates, and molybdates, as well as native elements and simple oxides. Delving into the commercial production of various types, the authors clarify the effects of temperature, pressure, solvents, and various other chemical components on the hydrothermal processes.
author_names: Kullaiah Byrappa

Masahiro Yoshimura
title: Handbook of Hydrothermal Technology: A Technology for Crystal Growth and Materials Processing
year: 2001

author_names: Paul J Phillips
title: Handbook of Crystal Growth
year: 1993

author_names: A P Wheeler
title: Handbook of Crystal Growth, Vol 1b
year: 1993

author_names: Robert B Heimann
title: Handbook of crystal growth. Vol. 3: Thin films and epitaxy. a: Basic techniques; b: Growth mechanisms and dynamics
year: 1997