Query: sic mosfet high voltage switch

Candidate papers:

abstract: The 10 kV to 15 kV SiC MOSFET and 15 kV SiC IGBT are state of the art high voltage (HV) devices designed by Cree Inc. These devices are expected to increase the power density of converters and are expected to replace 4.5 kV/6.5 kV Si IGBTs. However, these are not commercially available. On the other hand low voltage (LV) 1.7 kV SiC MOSFET is commercially available, and it is replacing existing 1.7 kV Si IGBT and it can meet immediate need of medium or high voltage (MV or HV) converter applications with series connection of these devices and can replace existing 4.5 kV/6.5 kV Silicon (Si) IGBT. Therefore, 10 kV 15 kV SiC modules and series connected 1.7 kV SiC MOSFET will be competing with each other for MV and HV converter applications. Hence, to explore the capability of low voltage SiC devices for MV or HV applications, a HV switch (10 kV 15 kV) using the series connection of 1.7 kV/300 A SiC MOSFET modules has been investigated. For making HV switch using series connected 1.7 kV SiC MOSFET, a simple RC snubber method has been used for dynamic voltage sharing to offset the turn off delays due to mismatch of device characteristics and gate signals. Experimental switching characterization with different values of RC snubbers has been carried out, and a methodology has been outlined to find the optimal RC snubber which gives minimum voltage sharing difference, snubber losses and total semiconductor losses. In addition, experimental switching characterization of 10 kV 15 kV SiC modules is presented. Furthermore, a performance comparison of HV 10 kV 15 kV SiC modules and HV switch using series connected 1.7 kV SiC MOSFETs is presented in this paper.
author_names: Kasunaidu Vechalapu

Subhashish Bhattacharya
title: Performance comparison of 10 kV#x2013;15 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices
venue: 2016 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2016

abstract: A novel high speed SiC MOSFET driver with a low switch voltage stress is presented in this paper. In the proposed driver, a harmonic component is injected to the conventional class E inverter. Consequently, the class E driver proposed in this paper not only maintains the strong points of the conventional class E inverter, such as simple topology and high frequency high efficiency operation, but also has its own advantage of low switch voltage stress. The proposed class E driver is designed in this paper. Additionally, the PSpice simulation and laboratory experiment are carried out. It can be seen from the PSpice simulation and experimental results that all the switch voltage waveforms satisfy the zero voltage switching (ZVS) and zero derivative switching (ZDS) conditions. Therefore, the proposed class E driver is available in the high frequency and high efficiency applications. Moreover, a quite lower switch voltage stress is obtained in the proposed class E driver. The simulated and experimental results agreed with the theoretical one well. These results mentioned before demonstrated the proposed driver's validity.
author_names: Xiuqin Wei

Yuchong Sun

Hiroo Sekiya
title: A Novel High Speed SiC MOSFET Driver with a Low Switch Voltage Stress
venue: 2018 International Power Electronics Conference (IPEC Niigata 2018 ECCE Asia)
year: 2018

author_names: Vechalapu Kasunaidu

Bhattacharya Subhashish
title: Performance comparison of 10 kV#x2013;15 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices
year: 2016

abstract: Hybrid switch (HyS) consisting of the paralleled silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) and silicon (Si) insulated gate bipolar transistors (IGBTs) is proposed for high switching frequency and high efficiency at a reasonable cost. In this paper, a compact HyS three phase full bridge power module, rated at 1200 V/200 A, was fabricated in house and fully tested for the first time. To minimize HyS power loss, the turn on gate signals are applied to the Si IGBTs and the SiC MOSFETs simultaneously while a prior turn off period exists between the turn off gate signals of the Si IGBTs and the SiC MOSFETs. The prior turn off period is selected through the double pulse test. Based on the HyS power module, a 30 kW three phase voltage source inverter was developed.
author_names: Lei Li

Puqi Ning

Xuhui Wen

Qiongxuan Ge

Yaohua Li
title: A 30kW Three Phase Voltage Source Inverter Based on The Si IGBT/SiC MOSFET Hybrid Switch
venue: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
year: 2019

abstract: The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices Soft switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.
author_names: Lei Wang

Donglai Zhang

Jinpei Duan

Jiannong Li
title: Design of SiC MOSFET high power density soft switching inverter using integrated magnetic technique
venue: 2018 13th IEEE Conference on Industrial Electronics and Applications (ICIEA)
year: 2018

abstract: SiC MOSFETs have demonstrated continued performance improvement and maturation in the areas of Gate oxide stability and reliability over the past years. While necessary, this alone is not sufficient to achieve reliable high voltage operation. In this paper, the design constraints impacting high voltage reliability and their impact on SiC MOSFET performance at useful operating conditions are discussed. Experimental results are demonstrated with industry benchmark, reliable operation of up to Tj=200degC with 1.2kV/25mOhm SiC MOSFETs and Tj=175degC, 1.7kV/450A all SiC MOSFET Dual Switch modules. Avalanche ruggedness of the high performance devices is also demonstrated with single pulse energy densities of 9 15J/cm2 recorded with Drain currents as high as ID= 90A for 0.2cm2 die.
author_names: Peter Almern Losee

Alexander Viktorovich Bolotnikov

L Yu

Greg Dunne

David Richard Esler

Jeffrey Erlbaum

Brian Lynn Rowden

Arun Virupaksha Gowda

Adam F Halverson

Reza Ghandi

Peter M Sandvik

Ljubisa Dragoljub Stevanovic

R Hristov
title: SiC MOSFET design considerations for reliable high voltage operation
venue: 2017 IEEE International Reliability Physics Symposium (IRPS)
year: 2017

abstract: High voltage SiC MOSFET modules are revolutionizing modern high power electronics owing to their high blocking voltage, low conduction resistance, and fast switching frequency. A 10 kV, 240 A SiC MOSFET module has recently become a candidate to build medium voltage converters. The MOSFET module comprises three independent submodules that can be configured as three phase legs, or one half bridge by paralleling. To maximize its performance, this paper presents a smart gate driver design for this particular semiconductor device. The design concentrates on a high current booster stage and a high bandwidth PCB embedded Rogowski switch current sensors for the paralleled submodules. The PCB layout has satisfied high voltage clearance and creepage standards. Finally, the booster current sharing and RSCS performance have been experimentally validated.
author_names: J Wang

Slavko Mocevic

Yue Xu

Christina Dimarino

Rolando Burgos

Dushan Boroyevich
title: A High Speed Gate Driver with PCB Embedded Rogowski Switch Current Sensor for a 10 kV, 240 A, SiC MOSFET Module
venue: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2018

abstract: The medium voltage (MV) high speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies 5 kHz) to generate higher fundamental frequency AC input voltages for the motor 500 Hz) and thereby achieving high speed at the motor output 15000 rpm) This paper presents the series connection of 1.7 kV SiC MOSFET devices to enable simple two level MV converter for high speed drive and grid connected applications. Experimental switching characterization of a phase leg (one pole of a three phase converter) with the series connection of four devices per arm (or eight per leg) has been presented. It also presents the experimental results of a DC AC half bridge inverter with four devices in series per arm at 3kV dc bus, at different fundamental frequencies. It also includes the experimental endurance test results of phase leg (pole) in a DC DC converter at 100 kW, 3kV dc bus. Furthermore, it also presents the performance evaluation of a 3 phase voltage source inverter (VSI) efficiency using four series connected devices for 3.6 kV dc bus, 2.1 kV AC(L L) 720 kW output power and its comparison with single 6.5 kV Si IGBT.
author_names: Kasunaidu Vechalapu

Samir Hazra

Utkarsh Raheja

Abhay Negi

Subhashish Bhattacharya
title: High speed medium voltage (MV) drive applications enabled by series connection of 1.7 kV SiC MOSFET devices
venue: 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2017

abstract: High voltage wide bandgap semiconductor devices such as the 15 kV SiC mosfet have attracted great attention because of their potential applications in high voltage and high frequency power converters. However, these devices are not commercially available at the moment, and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper, a 15 kV 40 A SiC three terminal power switch, the Future Renewable Electric Energy Delivery and Management (FREEDM) supercascode, is reported for the first time, which is based on a series connection of 1.2 kV SiC power devices. Compared with the monolithic 15 kV SiC mosfet, the FREEDM supercascode demonstrates obvious advantages in cost and thermal conductivity. The design and voltage balancing mechanism of the FREEDM supercascode are introduced, and the performance including the voltage balancing, conduction characteristics over a wide range of temperatures, and dynamic switching performance, is analyzed. The FREEDM supercascode's low cost and excellent thermal dissipation capability will facilitate early applications of SiC in very high voltage and high frequency power converters.
author_names: Xiaoqing Song

Alex Q Huang

Soumik Sen

Liqi Zhang

Pengkun Liu

Xijun Ni
title: 15 kV/40 A FREEDM Supercascode: A Cost Effective SiC High Voltage and High Frequency Power Switch
venue: IEEE Transactions on Industry Applications
year: 2017

abstract: The traditional wireless power transfer circuit uses the full bridge or half bridge inverter, which has complex circuit and control and low reliability. To solve these problems, a single switch LC resonant circuit is proposed, which is simple in structure and can realize zero voltage switching (ZVS) without the problem of shoot through. The circuit parameters and working process are modeled and analyzed. However, due to the influence of resonance, the common Si devices can not meet the demand because of the high blocking voltage of the switch. For this purpose, the circuit characteristics of SiC based devices are studied, and the differences of driving and temperature characteristics between SiC MOSFET and Si MOSFET are compared. Finally, a single switch wireless power transfer (WPT) platform based on SiC MOSFET is built, which proves that SiC devices have great advantages in the field of WPT.
author_names: Houji Li

Chunfang Wang

Yunrui Liu

Rui Yue
title: Research on Single Switch Wireless Power Transfer System Based on SiC MOSFET
venue: IEEE Access
year: 2019