Query: High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors

Candidate papers:

abstract: Schottky diodes and metal semiconductor field effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm 2 with the on/off ratio higher than 108. Ideality factor and barrier height for Pt metal on the boron doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is 0.55mA mm 1, which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B diamond.
author_names: Jiangwei Liu

Tokuyuki Teraji

Bo Da

Yasuo Koide
title: High Output Current Boron Doped Diamond Metal Semiconductor Field Effect Transistors
venue: IEEE Electron Device Letters
year: 2019

abstract: A common feature of the single walled carbon nanotube field effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability a key determinant of device performance. Here we show that contacting semiconducting single walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes. In situ modification of the electrode work function by hydrogen is carried out to shed light on the nature of the contacts. With Pd contacts, the 'ON' states of semiconducting nanotubes can behave like ohmically contacted ballistic metallic tubes, exhibiting room temperature conductance near the ballistic transport limit of 4e2/h (refs 4 6) high current carrying capability ~25 uA per tube) and Fabry Perot interferences at low temperatures. Under high voltage operation, the current saturation appears to be set by backscattering of the charge carriers by optical phonons. High performance ballistic nanotube field effect transistors with zero or slightly negative Schottky barriers are thus realized.
author_names: Ali Javey

Jing Guo

Qian Wang

Mark Lundstrom

Hongjie Dai
title: Ballistic carbon nanotube field effect transistors
venue: Nature
year: 2003

abstract: A diamond metal semiconductor field effect transistor (MESFET) with a Pt Schottky gate was fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain current of the MESFET operated at 300 degC was 20 times higher than that at room temperature due to the activation of acceptors. The breakdown voltage was highly dependent on the gate drain length and reached 1.5 kV at a gate drain length of 30 mm, which is the highest reported for a diamond FET.
author_names: H Umezawa

Takeshi Matsumoto

Shinichi Shikata
title: Diamond Metal Semiconductor Field Effect Transistor With Breakdown Voltage Over 1.5 kV
venue: IEEE Electron Device Letters
year: 2014

abstract: The novel electronic properties of graphene, including a linear energy dispersion relation and purely two dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field effect transistor. The saturation velocity depends on the charge carrier concentration and we attribute this to scattering by interfacial phonons in the SiO2 layer supporting the graphene channels. Unusual features in the current voltage characteristic are explained by a field effect model and diffusive carrier transport in the presence of a singular point in the density of states. The electrostatic modulation of the channel through an efficiently coupled top gate yields transconductances as high as 150 microS microm 1 despite low on off current ratios. These results demonstrate the feasibility of two dimensional graphene devices for analogue and radio frequency circuit applications without the need for bandgap engineering.
author_names: Inanc Meric

Melinda Y Han

Andrea F Young

Barbaros Ozyilmaz

Philip Kim

Kenneth L Shepard
title: Current saturation in zero bandgap, top gated graphene field effect transistors.
venue: Nature nanotechnology
year: 2008

abstract: Abstract Field effect transistors (FETs) in diamond should outperform FET structures on other wide bandgap materials like SiC and GaN in high power/high temperature applications due to the ideal diamond materials properties. However, the technology of these structures proved difficult leaving two device concepts to investigate: (1) the boron d doped p channel FET and (2) the hydrogen induced p type surface channel FET. The d channel FET approach follows a traditional design path of power FET structures. Here, simulation results have enabled the extrapolation of a maximum RF output power to 27 W/mm, a value which is indeed higher than for any FET based on III Nitrides or SiC. However, due to the narrow technological parameter window, fabricated d channel FETs are still well behind expectations. In contrast, concerning the surface channel FET the physical/chemical nature of its channel remains still under discussion. Nevertheless, results obtained with this FET concept yielded a VDmax>200 V (LG=1 mm) and a IDmax>360 mA/mm a fT=11.5 GHz and fmaxU>40 GHz (LG=0.2 mm) and a recently obtained RF power measurement at 1 GHz. Furthermore, the 1 GHz power measurement result has been obtained on a diamond quasi substrate grown on a Ir/SrTiO3 substrate. This result may therefore open up the perspective for wafer scale diamond electronics.
author_names: Aleksandar Aleksov

Michal Kubovic

N Kaeb

U Spitzberg

A Bergmaier

G Dollinger

Th Bauer

Matthias Schreck

Bernd Prof Stritzker

Erhard Kohn
title: Diamond field effect transistors concepts and challenges
year: 2003

abstract: We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p type semiconducting material. Same as graphene and MoS2, single layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in layer strain, and is significantly larger than the bulk value of 0.31 0.36 eV. The observed photoluminescence peak of single layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n type MoS2. At room temperature, our few layer phosphorene field effect transistors with 1.0 mm channel length display a high on current of 194 mA/mm, a high hole field effect mobility of 286 cm(2)/V*s, and an on/off ratio of up to 10(4) We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.
author_names: Han Liu

Adam T Neal

Zhen Zhu

Zhe Luo

Xianfan Xu

David Tomanek

Peide D Ye
title: Phosphorene: an unexplored 2D semiconductor with a high hole mobility.
venue: ACS nano
year: 2014

abstract: Tunnel field effect transistors (TFETs) with record high ION/IOFF ratio >106) for low voltage (0.5 V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band to band tunneling current model. Using the calibrated analytical model, the energy delay performance of TFET based technology is compared against that of conventional CMOS technology, at the 65 nm node. The TFET is projected to provide dramatic improvement in energy efficiency for performance in the range up to ~0.5 GHz.
author_names: Sung Hwan Kim

Hei Kam

Chenming Calvin Hu

Tsu-Jae King Liu
title: Germanium source tunnel field effect transistors with record high ION/IOFF
venue: 2009 Symposium on VLSI Technology
year: 2006

abstract: We present a detailed description and comparison of algorithms for performing ab initio quantum mechanical calculations using pseudopotentials and a plane wave basis set. We will discuss: (a) partial occupancies within the framework of the linear tetrahedron method and the finite temperature density functional theory, (b) iterative methods for the diagonalization of the Kohn Sham Hamiltonian and a discussion of an efficient iterative method based on the ideas of Pulay's residual minimization, which is close to an order Natoms2 scaling even for relatively large systems, (c) efficient Broyden like and Pulay like mixing methods for the charge density including a new special 'preconditioning' optimized for a plane wave basis set, (d) conjugate gradient methods for minimizing the electronic free energy with respect to all degrees of freedom simultaneously. We have implemented these algorithms within a powerful package called VAMP (Vienna ab initio molecular dynamics package) The program and the techniques have been used successfully for a large number of different systems (liquid and amorphous semiconductors, liquid simple and transition metals, metallic and semi conducting surfaces, phonons in simple metals, transition metals and semiconductors) and turned out to be very reliable.
author_names: Georg Kresse

Jurgen Furthmuller
title: Efficiency of ab initio total energy calculations for metals and semiconductors using a plane wave basis set
year: 1996

abstract: Graphene field effect transistors are fabricated utilizing single crystal hexagonal boron nitride (h BN) an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h BNas a gate di electric for graphene FETs.
author_names: Inanc Meric

Cory R Dean

Andrea F Young

James C Hone

Philip Kim

Kenneth L Shepard
title: Graphene field effect transistors based on boron nitride gate dielectrics
venue: 2010 International Electron Devices Meeting
year: 2010

abstract: The microwave performance of a diamond metal semiconductor field effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2 3 /spl mu/m and a source gate spacing of 0.1 /spl mu/m were fabricated on the hydrogen terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 /spl mu/m gate MESFET at V/sub GS/ 1.5 V and V/sub DS/ 5 V,for which a cutoff frequency f/sub T/ and a maximum oscillating frequency f/sub max/ of 2.2 GHz and 7 GHz were obtained, respectively.
author_names: Hirotada Taniuchi

H Umezawa

Takuya Arima

Minoru Tachiki

Hiroshi Kawarada
title: High frequency performance of diamond field effect transistor
venue: IEEE Electron Device Letters
year: 2001