Query: pin photodiode test bench photonics

Candidate papers:

abstract: Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche quenching circuits, can be used to detect single photons and are therefore called singlephoton avalanche diodes SPAD's. Circuit configurations suitable for this operation mode are critically analyzed and their relative merits in photon counting and timing applications are assessed. Simple passive quenching circuits (PQC's) which are useful for SPAD device testing and selection, have fairly limited application. Suitably designed active quenching circuits (AQC's) make it possible to exploit the best performance of SPAD's. Thick silicon SPAD's that operate at high voltages (250 450 V) have photon detection efficiency higher than 50% from 540 to 850 nm wavelength and still ~3% at 1064 nm. Thin silicon SPAD's that operate at low voltages (10 50 V) have 45% efficiency at 500 nm, declining to 10% at 830 nm and to as little as 0.1% at 1064 nm. The time resolution achieved in photon timing is 20 ps FWHM with thin SPAD's; it ranges from 350 to 150 ps FWHM with thick SPAD's. The achieved minimum counting dead time and maximum counting rate are 40 ns and 10 Mcps with thick silicon SPAD's, 10 ns and 40 Mcps with thin SPAD's. Germanium and III V compound semiconductor SPAD's extend the range of photon counting techniques in the near infrared region to at least 1600 nm wavelength.
author_names: Sergio Cova

Massimo Ghioni

Andrea Leonardo Lacaita

Carlo Samori

Franco Zappa
title: Avalanche photodiodes and quenching circuits for single photon detection.
venue: Applied optics
year: 1996

abstract: Integrated microwave photonics (IMWP) is concerned with applying integrated photonics technology to microwave photonic systems. It is one of the most active and exciting areas of current research and development in microwave photonics (MWP) building upon the impressive foundations of integrated photonics in various systems involving material platforms such as indium phosphide (InP) and silicon nitride (Si3N4) The aim of this article is to explain to the wider microwave engineering community the significance of the new field of IMWP and to describe how it may potentially be applied to improve the performance and capabilities of microwave and millimeter wave (mmWave) systems. Just as the microwave monolithic integrated circuit (MMIC) has revolutionized active microwave circuits, IMWP is poised to open up new applications for microwave engineering that take advantage of the unique functionalities offered by photonics, especially with regard to its large bandwidth.
author_names: Stavros Iezekiel

Maurizio Burla

Jonathan Klamkin

David A I Marpaung

Jose Capmany
title: RF Engineering Meets Optoelectronics: Progress in Integrated Microwave Photonics
venue: IEEE Microwave Magazine
year: 2015

abstract: We report on noise characterization of a midwave infrared (MWIR) InAs/GaSb superlattice (SL) single detector. The SL structure was made of eight InAs monolayers (MLs) and eight GaSb MLs, with a total thickness of 2 mm (440 SL periods) This structure exhibits a cut off wavelength of 4.8 mm at 77 K. Extracted from current voltage characteristics, zero bias resistance area product R0 A above 5x105 O cm2 at 80 K was measured. Noise measurements were also performed under dark conditions. The measurements reveal the absence of 1/f noise above 30 Hz. Moreover, the detector under test remains Schottky noise limited up to a bias voltage of 200 mV typically, which confirms the quality of the MWIR SL pin photodiode.
author_names: Katarzyna Jaworowicz

Isabelle Ribet-Mohamed

C Cervera

J B Rodriguez

Philippe Christol
title: Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode
venue: IEEE Photonics Technology Letters
year: 2011

abstract: A new Optical High Frequency test structure and dedicated test bench have been developed to characterize a Germanium on Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than 20 dBm at 109 GHz.
author_names: S Oeuvrard

Jean-Francois Lampin

Guillaume Ducournau

Leopold Virot

Jean-Marc Fedeli

J M Hartmann

Francois Danneville

Yvan Morandini

Daniel Gloria
title: Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium on Silicon photodiode
venue: 2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
year: 2013

abstract: We present a full characterization of the radiometric performances of a type II InAs/GaSb superlattice pin photodiode operating in the mid wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response measurements: quantum efficiency reaches 23% at l 2.1 um for 1 um thick structure. Noise under illumination measurements are also reported: noise is limited by the Schottky contribution for reverse bias voltage smaller than 1.2 V. The specific detectivity, estimated for 2p field of view and 333 K background temperature, was determined equal to 2.29 x 10^10 Jones for 0,8 V bias voltage and 77 K operating temperature.
author_names: E Giard

Rachid Taalat

Marie Delmas

Julia Bella Rodriguez

Philippe Christol

Isabelle Ribet-Mohamed
title: Radiometric and noise characteristics of InAs rich T2SL MWIR pin photodiodes
year: 2014

abstract: Solid state light matter interfaces based on crystals doped with rare earth ions have shown great progress in recent years, heading towards quantum technology applications. In this thesis we present three experiments testing the suitability of an atomic frequency comb light matter interface, implemented in an Nd:YSO crystal, for the storage of quantum information. A dedicated source of entangled photons has been developed, and the storage and retrieval of quantum correlations and entanglement been studied. We show the successful transfer of photonic entanglement to the crystal, and the generation of a matter matter entangled state between two crystals. These are two of the main steps in a quantum repeater protocol. We also demonstrate faithful storage and retrieval of quantum information encoded in the polarization of heralded single photons. These experiments prove the strong potential of solid state light matter interfaces based on atomic frequency combs for quantum communication.
author_names: Christoph Clausen
title: Solid state light matter interfaces on the quantum test bench
year: 2013

abstract: A photonic delay line is used as a frequency discriminator for measurement of the phase noise hence the short term frequency stability of microwave oscillators. The scheme is suitable for electronic and photonic oscillators, including the optoelectronic oscillator, mode lock lasers, and other types of rf and microwave pulsed optical sources. The approach is inherently suitable for a wide range of frequency without reconfiguration, which is important for the measurement of tunable oscillators. It is also insensitive to a moderate frequency drift without the need for phase locking.
author_names: Enrico Rubiola

Ertan Salik

Shouhua Huang

Nan Yu

Lute Maleki
title: Photonic delay technique for phase noise measurement of microwave oscillators
year: 2005

abstract: The development of a high throughput, accurate, and cost efficient inline optical test system is a key challenge to mass manufacturing of silicon photonics. For our Silicon Photonic technologies, we developed a fully automated wafer level optical test system for both, active and passive optical testing. The measured insertion loss of fiber grating couplers is repeatable within 1.1dB (3s) A unique forward and reverse alternative test method is designed to extract photodetector responsivity.
author_names: Shuren Hu

Andy Stricker

Kate McLean

Calvin Ma

Subharup Gupta Roy

Dean Percy

John Cartier

David Clark

Raymond van Roijen

Bart Green

Kevin Dezfulian

Louis Medina

John Ferrario

Dave Riggs

K J Giewont
title: Fully automated in line optical test system: Advanced materials photonics
venue: 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
year: 2018

abstract: We report on fabricating ErxY2 xSiO5 nanocrystals using ErCl36H2O and YCl36H2O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at. Er without clustering and loss of optical activity, and use of Y enables continuous mixing of Er and Y for controlling cooperative upconversion. We obtain a cooperative upconversion coefficients of (2.2+ 1.1)x10 cm/s and (5.4+ 2.7)x10 cm/s at an Er concentration of 1.2x10 cm and 2.0x10 cm, respectively. These values are up to 10 times lower at 10 times higher Er concentration than those reported for Er doped silica, and shows that up to 69 dB/cm gain could be achieved for ultra compact optical amplification. Also, we report on the deposition of ErxY2 xSiO5 thin film on Si substrate using ion beam sputter deposition. Rapid thermal annealing at 1100 degC is enough to form crystal phase the film and activate most of Er ions.
author_names: Fuad E Doany

Daniel M Kuchta

Laurent Schares

Russell A Budd

Frank R Libsch
title: Photonics Packaging Integration and Interconnects VIII
year: 2008

abstract: High density germanium photodiode arrays are integrated on top of a dummy CMOS 200 mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm2 is obtained. A median bandwidth above 9 GHz is reached with a large 30 mm diameter photodiode.
author_names: Christophe Kopp

Alexandre Ferron

Jean-Michel Hartmann

Maryse Fournier

Emmanuel Augendre

Philippe Grosse

Jean-Marc Fedeli

Henk Derks
title: Wafer Level High Speed Germanium Photodiode Array Integration
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2011