Query: Antimonide superlattice infrared applications

Candidate papers:

abstract: Nearly lattice matched or pseudomorphically grown III V semiconductor quantum structures such as quantum wells, quantum dots, and superlattices can provide high degree of flexibility in terms cutoff wavelength range. In this presentation, we describe the development of long wavelength quantum well infrared photodetectors (QWIPs) for imaging spectrometer applications and quantum dot infrared photodetectors (QDIPs) for long wavelength applications. In addition, III V semiconductors offer a highly effective platform for the development of sophisticated heterostructure based MWIR and LWIR detectors, as exemplified by the high performance double heterstructure (DH) nBn, XBn, and type II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra red detector (CBIRD) design for increasing the collection efficiency of photo generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation recombination (G R) dark current due to Shockley Read Hall (SRH) processes.
author_names: Sarath D Gunapala

David Z Ting

Alexander Soibel

Sam Keo

Sir Rafol

Jason Mumolo

John K Liu

Cory Hill

Arezou Khoshakhlagh

Linda Hoglund

Edward Luong
title: Development of Quantum Well, Quantum Dot, and Antimonide Superlattice Infrared Photodetectors
year: 2014

abstract: While physical properties of ideal antimonide superlattices (ASL) indicate that they should significantly outperform mercury cadmium telluride (MCT) based infrared photodiodes for low dark current applications in the long and very long wave infrared (LWIR and VLWIR) this potential has not yet been fully realized. Even though measured Auger and tunneling rates in ASL's are reduced as predicted, overall carrier lifetimes remain much shorter, and dark currents much higher than expected. The large carrier losses are the result of defects in the ASL structure, with contributions measured from large bulk defects and surface channels along mesa sidewalls, and the remaining component believed to be due to midgap states. In this presentation we report on several studies of epitaxial growth parameters and their influence on defect formation. X ray photoelectron spectroscopy analysis of oxide desorption from GaSb substrates shows the presence of both antimony and gallium oxides, along with their decomposition and desorption behavior with anneal temperature. A study of buffer growth shows that defect density and size are critically dependent on growth temperature, with an optimal growth window between 480 and 500 degC. Side by side GaSb buffer growths on vicinal (100) 1 deg (111) and flat (100) substrates show that while growing on vicinal material can suppress mound formation, it does not yield epilayers as flat as can be obtained on (100) substrates grown under optimal conditons. Finally, the ratio of As to In flux during superlattice growth can be used to tune the lattice parameter both above and below that of GaSb, with strain related defects appearing when the mismatch reaches roughly 0.1%
author_names: Edward H Aifer

Eric M Jackson

Brian R Bennett

Igor Vurgaftman

J R Meyer

Glenn G Jernigan
title: Suppression of Bulk Defects in Antimonide Superlattice Infrared Photodiodes
year: 2002

abstract: Mid infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ~5.5 mm and a dark current density of 1.4 x 10 2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 x 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type II InAs/InAsSb superlattice based barrier nBn photodetector grown on a GaSb on silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid infrared integrated photonic circuits.
author_names: Evangelia Delli

V Letka

Peter Hodgson

Eva Repiso

Jonathan P Hayton

Adam P Craig

Qi Lu

Richard Beanland

Anthony Krier

Andrew R J Marshall

Peter J Carrington
title: Mid Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon
year: 2019

abstract: Type II InAs/GaSb Superlattice (SL) a system of multi interacting quantum wells was first introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this low dimensional system has drawn a lot of attention for its attractive quantum mechanics properties and its grand potential for the emergence into the application world, especially in infrared detection. In recent years, Type II InAs/GaSb superlattice photo detectors have experienced significant improvements in material quality, structural designs and imaging applications which elevated the performances of Type II InAs/GaSb superlattice photodetectors to a comparable level to the state of the art Mercury Cadmium Telluride. We will present in this talk the current status of the state of the art Type II superlattice photodetectors and focal plane arrays, and the future outlook for this material system.
author_names: Manijeh Razeghi

Binh Minh Nguyen

Pierre Yves Delaunay

Edward Kwei Wei Huang

Siamak Abdollahi Pour

Paritosh Manukar

Simeon I Bogdanov
title: State of the art Type II antimonide based superlattice photodiodes for infrared detection and imaging
venue: Optical Engineering Applications
year: 2009

abstract: Authors discuss how anion incorporation was controlled during the epitaxial growth process to develop InAs/GaInSb superlattice (SL) materials for very long wavelength infrared applications. A SL structure of 47.0 A InAs/21.5 A Ga0.75In0.25Sb was selected to create a very narrow band gap. Although a molecular beam epitaxy growth developed can produce a strain balanced ternary SL structure with a precisely controlled band gap around 50 meV, the material quality of grown SL layers is particularly sensitive to growth defects formed during an anion incorporation process. Since Group III antisites are the dominant structural defects responsible for the low radiative efficiencies, the authors focus on stabilizing III/V incorporation during SL layer growth by manipulating the growth surface condition for a specific anion cracking condition. The optimized ternary SL materials produced an overall strong photoresponse signal with a relatively sharp band edges and a high mobility of ~10,000 cm2/V s that is important for developing infrared materials.
author_names: H J Haugan

Gail J Brown

Said Elhamri

Larry Grazulis
title: Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection
year: 2015

abstract: Infrared detectors are very important technological tools for many different applications. Infrared detectors have existed as far back as the late 1700s but received a tremendous push 200 years later during World War II. Both thermal and photon based infrared detectors have had significant advancements with many different varieties becoming available with varying degrees of sensitivity, speed, and wavelength sensitivity. One of the best performing technologies is based on Mercury Cadmium Telluride. However, it still has limitations with regard to low operating temperature, material yield and processing difficulties. A newer material technology known as type II indium arsenide/gallium antimonide strain layered superlattice has received much attention for its potential superior performance from lower dark current, mature III V material fabrication techniques, and design versatility. However, superior
author_names: Stephen A Myers
title: Mid Wave and Long Wave Single Uni polar Barrier Infrared Detectors Based on Antimonide Material Systems
year: 2013

abstract: Significant progress has been achieved in the antimonide based type II superlattices since the analysis by Smith and Mailhiot in 1987 first pointed out their advantages for infrared detection. In the long wavelength infrared (LWIR) type II InAs/Ga(In)Sb superlattices have been shown theoretically to have reduced Auger recombination and suppressed band to band tunneling. Suppressed tunneling in turn allows for higher doping in the absorber, which has led to reduced diffusion dark current. The versatility of the antimonide material system, with the availability of three different types of band offsets, provides great flexibility in device design. Heterostructure designs that make effective use of unipolar barriers have demonstrated strong reduction of generation recombination (G R) dark current. As a result, the dark current performance of antimonide superlattice based single element LWIR detectors is now approaching that of the state of the art MCT detector. To date, the antimonide superlattices still have relatively short carrier lifetimes; this issue needs to be resolved before type II superlattice infrared detectors can achieve their true potential. The antimonide material system has relatively good mechanical robustness when compared to II VI materials; therefore FPAs based on type II superlattices have potential advantages in manufacturability. Improvements in substrate quality and size, and reliable surface leakage current suppression methods, such as those based on robust surface passivation or effective use of unipolar barriers, could lead to high performance large format LWIR focal plane arrays.
author_names: David Z Ting

Alexander Soibel

Jean Nguyen

Linda Hoglund

Arezou Khoshakhlagh

Sir Rafol

Sam Keo

Anna Liao

Jason Mumolo

John K Liu

Sarath D Gunapala
title: Type II superlattice barrier infrared detector
venue: Optical Engineering Applications
year: 2011

abstract: Authors discuss how anion incorporation was controlled during the epitaxial growth process to develop InAs/GaInSb superlattice (SL) materials for very long wavelength infrared applications. A SL structure of 47.0 A InAs/21.5 A Ga0.75In0.25Sb was selected to create a very narrow band gap. Although a molecular beam epitaxy growth developed can produce a strain balanced ternary SL structure with a precisely controlled band gap around 50 meV, the material quality of grown SL layers is particularly sensitive to growth defects formed during an anion incorporation process. Since Group III antisites are the dominant structural defects responsible for the low radiative efficiencies, the authors focus on stabilizing III/V incorporation during SL layer growth by manipulating the growth surface condition for a specific anion cracking condition. The optimized ternary SL materials produced an overall strong photoresponse signal with a relatively sharp band edges and a high mobility of 10,000 cm/V s that is important for developing infrared materials. 2015 Elsevier B.V. All rights reserved.
author_names: H J Haugan

G J Brown

Said Elhamri

Larry Grazulis
title: CONTROL OF ANION IN CORPORATION IN THE MOLECULAR BEAM EPITAXY OF TERNARY ANTIMONIDE SUPERLATTICES FOR VERY LONG WAVELENGTH INFRARED DETECTION (POSTPRINT)

abstract: The properties of Sb based III V semiconductor compounds for optoelectronic applications in the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) range were reviewed. The growths of the Sb based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH) multi quantum well (MQW) and strained superlattice (SSL) lasers in the 3 5 m m range were fabricated. InAs GaSb type II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.
author_names: Manijeh Razeghi
title: Overview of antimonide based III V semiconductor epitaxial layers and their applications at the center for quantum devices
year: 2003

abstract: The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium format pixel, co registered, dual band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders of magnitude reduction in detector dark current density and substantial increase in quantum efficiency, as well as the demonstration of good quality long wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing related performance degradation. In addition, challenges in long term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA) this 4 year program sets its goal to establish U.S. industry capability of producing high quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III V industry resources and taking advantage of years of valuable experiences amassed by the HgCdTe FPA industry. By end of the program span, three sets of FPAs will be demonstrated a small format long wave FPA, a large format long wave FPA, and a medium format dual band FPA at long wave and mid wave infrared.
author_names: Lucy Zheng

Meimei Tidrowb

Leslie Aitchesonb

Jerry O'Connorc
title: 1 1 2010 Developing High Performance III V Superlattice IRFPAs for Defense Challenges and Solutions
year: 2016