Query: applied physics letters ,104,21917(2014)

Candidate papers:

abstract: Chuan Liu, Yong Xu, Gerard Ghibaudo, Xubing Lu, Takeo Minari, and Yong Young Noh Citation: Applied Physics Letters 104, 079902 (2014) doi: 10.1063/1.4866287 View online: http:/dx.doi.org/10.1063/1.4866287 View Table of Contents: http:/scitation.aip.org/content/aip/journal/apl/104/7?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Evaluating injection and transport properties of organic field effect transistors by the convergence point intransfer length method Appl. Phys. Lett. 104, 013301 (2014) 10.1063/1.4860958 Erratum: "Influence of dielectric dependent interfacial widths on device performance in top gate P(NDI2OD T2)field effect transistors" [Appl. Phys. Lett.101, 093308 (2012) Appl. Phys. Lett. 101, 179901 (2012) 10.1063/1.4762831 Erratum: "Poly(3 hexylthiophene) crystalline nanoribbon network for organic field effect transistors" [Appl. Phys.Lett.96, 243304 (2010) Appl. Phys. Lett. 97, 189902 (2010) 10.1063/1.3512957 Comment on "Depletion width measurement in an organic Schottky contact using a metal semiconductor field effect transistor" [Appl. Phys. Lett.91, 083513 (2007) Appl. Phys. Lett. 97, 096101 (2010) 10.1063/1.3475395 Erratum: "Electronic transport characteristics of electrolyte gated conducting polyaniline nanowire field effecttransistors" [Appl. Phys. Lett.95, 013113 (2009) Appl. Phys. Lett. 95, 079901 (2009) 10.1063/1.3213393
author_names: Chuan Liu

Yong Xu

Gerard Ghibaudo

Xubing Lu

Takeo Minari

Yong-Young Noh
title: Erratum: "Evaluating injection and transport properties of organic field effect transistors by the convergence point in transfer length method" [Appl. Phys. Lett. 104, 013301 (2014)
year: 2014

abstract: Enhanced flexoelectricity in perovskite ceramics and single crystals has been reported before. In this letter, 3 3 ceramic ceramic Ba0.6Sr0.4TiO3/Ni0.8Zn0.2Fe2O4 composite with a colossal permittivity was employed in the conventional pure bending experiment in order to examine the transverse flexoelectric response. The measured flexoelectric coefficient at 30 Hz is 128 mC/m and varies to 16 mC/m with the frequency increasing from 30 Hz to 120 Hz, mainly due to the inverse correlation between the permittivity and the frequency. This result reveals the permittivity dependence of flexoelectric coefficient in the frequency dispersion materials, suggesting that the giant permittivity composites can be good flexoelectric materials. Disciplines Engineering Physical Sciences and Mathematics Publication Details Shu, L. Huang, W. Kwon, S. Ryung. Wang, Z. Li, F. Wei, X. Zhang, S. Lanagan, M. Yao, X. Jiang, X. (2014) Converse flexoelectric coefficient f(1212) in bulk Ba0.67Sr0.33TiO3. Applied Physics Letters, 104 (23) 232902 1 232902 6. Authors Longlong Shu, Wenbin Huang, Seol Ryung Kwon, Zhao Wang, Fei Li, Xiaoyong Wei, Shujun Zhang, Michael T. Lanagan, Xi Yao, and Xiaoning Jiang This journal article is available at Research Online: http:/ro.uow.edu.au/aiimpapers/3070 Converse flexoelectric coefficient f1212 in bulk Ba0.67Sr0.33TiO3 Longlong Shu, Wenbin Huang, Seol Ryung Kwon, Zhao Wang, Fei Li, Xiaoyong Wei, Shujun Zhang, Michael Lanagan, Xi Yao, and Xiaoning Jiang Citation: Appl. Phys. Lett. 104, 232902 (2014) doi: 10.1063/1.4882060 View online: https:/doi.org/10.1063/1.4882060 View Table of
author_names: Longlong Shu

Wenbin Huang

Seol ryung Kwon

Zu-Jun Wang

Fei Li

Xiaoyong Wei

Shujun Zhang

Michael T Lanagan

Xi Yao

Xiaoning Jiang
title: Converse flexoelectric coefficient f 1212 in bulk Ba 0 67 Sr 0 33 TiO 3
year: 2014

abstract: A thin film based Erbium doped Tellurium Oxide (TeO2) waveguide amplifier producing gain from 1500nm to 1640nm when pumped at 980nm is demonstrated. At measured internal gains exceeding 14dB lasing due to end facet reflection set in producing the first tellurite waveguide laser. High gains were observed despite significant upconversion, whose impact appears to be mitigated to some extent by residual OH contamination. The device displayed no photosensitive effects from either the high pumping intensities used or the intracavity intensity at 1550nm. (c)2014 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (140.3210) Laser amplifier; (160.4670) Optical materials; (230.7370) Waveguides. References and links 1. S. Berneschi, G. Nunzi Conti, G.C. Righini, "Planar waveguide ampflifiers," Ceramist: Jnl Korean Ceram. Soc. 10, 75 85 (2007) 2. G.N. van den Hoven, R.J.I.M. Koper, A. Polman, C. van Dam, J.W.M. van Uffelen, M.K. Smit, "Net optical gain at 1.53 mm in Er doped Al2O3 waveguides on silicon," Applied Physics Letters 68, 1886 1888 (1996) 3. J.E. Roman, M. Hempstead, C. Ye, S. Nouh, P. Camy, P. Laborde, C. Lerminiaux, "1.7 mm excited state absorption measurement in erbium doped glasses," Appl. Phys. Lett. 67, 470 472 (1995) 4. Y.C. Yan, A.J. Faber, H. de Waal, P.G. Kik, A. Polman, "Erbium doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 m," Applied Physics Letters 71, 2922 2922 (1997) 5. G. Della Valle, A. Festa, G. Sorbello, K. Ennser, C. Cassagnetes, D. Barbier, S. Taccheo, "Single mode and high power waveguide lasers fabricated by ion exchange," Opt. Express 16, 12334 12341 (2008) 6. G. Della Valle, R. Osellame, G. Galzerano, N. Chiodo, G. Cerullo, P. Laporta, O. Svelto, U. Morgner, A.G. Rozhin, V. Scardaci, A.C. Ferrari, "Passive mode locking by carbon nanotubes in a femtosecond laser written waveguide laser," Applied Physics Letters 89 (2006) 7. G. Della Valle, S. Taccheo, P. Laporta, G. Sorbello, E. Cianci, V. Foglietti, "Compact high gain Erbiumytterbium doped waveguide amplifier fabricated by Ag Na ion exchange," Electronics Letters 42, 632 633 (2006) 8. R. Osellame, G. Della Valle, N. Chiodo, S. Taccheo, P. Laporta, O. Svelto, G. Cerullo, "Lasing in femtosecond laser written optical waveguides," Applied Physics A: Materials Science Processing 93, 17 26 (2008) 9. R.A.H. El Mallawany, Tellurite glasses handbook: physical properties and data (CRC Press, US, 2002) 10. C.E. Chryssou, F. Di Pasquale, C.W. Pitt, "Er doped channel optical waveguide amplifiers for WDM systems: A comparison of tellurite, alumina and Al/P silicate materials," IEEE Journal on Selected Topics in Quantum Electronics 6, 114 121 (2000) 11. S. Dai, C. Yu, G. Zhou, J. Zhang, G. Wang, L. Hu, "Concentration quenching in Erbium doped tellurite glasses," Journal of Luminescence 117, 39 45 (2006) 12. A. Mori, "Tellurite based fibers and their applications to optical communication networks," Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan 116, 1040 1051 (2008) 13. S. Shen, A. Jha, X. Liu, M. Naftaly, K. Bindra, H.J. Bookey, A.K. Kar, "Tellurite glasses for broadband amplifiers and integrated optics," J Am Ceram Soc 85, 1391 1395 (2002) 14. T.T. Fernandez, G. Della Valle, R. Osellame, G. Jose, N. Chiodo, A. Jha, P. Laporta, "Active waveguides written by femtosecond laser irradiation in an Erbium doped phospho tellurite glass," Optics Express 16, 15198
author_names: Khu Vu

Sajjad Farahani

Steve J Madden
title: 980 nm pumped Erbium Doped Tellurium Oxide Planar Rib Waveguide Laser and Amplifier with Gain in S C and
year: 2014

abstract: Zai Guang Dian Dui Kang Ying Yong Zhong ,2.7 mmHe 4.3 mmBo Duan De Shuang Zhong Hong Wai Ji Guang Shou Dao Te Bie Guan Zhu Qi Jin Yi You De Ji Zhu Tu Jing Du Zhi Neng Fen Bie Chan Sheng Qi Zhong Yi Ge Bo Duan De Ji Guang ,Qie Chan Sheng Fang Fa Dan Yi Zhuan Huan Xiao Lu Shou Dao Yi Ding Xian Zhi Xin Jin Yan Jiu Biao Ming ,Ru Guo Cai Yong Te Ding Bo Chang 1.658 mmDe Ji Guang Zuo Wei Beng Pu Guang Yuan ,Tong Guo Fei Xian Xing Can Liang Guo Cheng ,Ke Yi Tong Shi Huo De 2.7 mm, 4.3 mmLiang Ge You Yong Bo Duan De Ji Guang Shu Chu Shuang Zhong Hong Wai Ji Guang Fang An De Nan Dian He Guan Jian Zai Yu 1.658 mmZhe Ge Te Ding Bo Chang Shi Qian Suo Wei You De Bu Neng You Xi Tu Chi Zi Zhi Jie Fu She Chan Sheng Ling Yi Ge Te Shu Bo Duan Ji Guang Ying Yong De Lei Si Li Zheng Wei :Zai Da Qi Tuan Liu Zi Gua Ying Guang Xue Bo Qian Xiao Zheng Xi Tong Zhong ,Na Dao Xing De Xin Biao Guang Yuan Suo Xu De 589.1591 nmZhai Dai Huang Guang Ji Guang (Dui Ying Na Yuan Zi D2Pu Xian )Ye Shi Yi Ge Chang Gui Fang Fa Bu Neng Zhi Jie Chan Sheng De Te Ding Bo Chang Yin Ci ,Yan Jiu Jie Jue Chan Sheng Ge Lei Te Ding Bo Chang Ji Guang De Ji Zhu Tu Jing He Fang Fa ,Shi Shi Fen Bi Yao He You Yi Yi De Zuo Wei Dian Xing Shi Li ,Ben Lun Wen Jiang Zhu Yao Zhen Dui 1.6 mmBo Duan De Xu Qiu ,Kai Zhan Xi Tong De Li Lun He Shi Yan Yan Jiu Zai Li Lun Yan Jiu Ji Chu Shang ,Ti Chu Bing You Hua She Ji Liao Yi Tiao Ju You Pu Gua Yi Yi De Ji Lian Xing Ji Zhu Lu Xian Zhai Xian Kuan 1.5 mm Er:YbGong Xian Guang Xian Ji Guang Beng Pu 1.6 mmBo Duan La Man Guang Xian Ji Guang Qi ;Zai Shi Yan Shang Cheng Gong Shi Xian Liao Fu Gai 1.5, 1.6 mmBo Duan De Zhai Dai Ke Diao Xie Ji Bo Chang Suo Ding Ji Guang Shu Chu Huo De Fa Ming Zhuan Li Shou Quan Tong Guo Gai Bian Zeng Yi Guang Xian Chang Du ,Bing Yun Yong Ti Bu La Ge Guang Zha (VBG)Bo Chang Diao Xie ,Shou Ci Zai Er:YbGong Xian Guang Xian Ji Guang Qi Zhong Huo De Liao Tong Shi Fu Gai C bandHe L bandDe Ke Diao Xie Ji Guang Shu Chu ;Yun Yong Shuang VBGGuang Pu Zhai Hua Ji Zhu ,Huo De Liao Tong Lei Ji Zhu Zui Zhai Xian Kuan Xiao Yu ~38 pmHe 19.4 WGong Lu De Ji Guang Shu Chu Zai Yi Zhai Dai 1545 nm Er:YbGong Xian Guang Xian Ji Guang Beng Pu Jian Bian Zhe She Lu Duo Mo Tong Xin Guang Xian He Te Shu She Ji De Shuang Bao Ceng La Man Guang Xian ,Ying Yong VBGYu Bo Chang Diao Xie Bo Chang Suo Ding Ji Guang Pu Zhai Hua ,Shi Xian Liao 1.6 mmBo Duan 10.5 WGong Lu Tong Lei Ji Zhu Zui Zhai Xian Kuan 0.1 nmDe Ji Guang Shu Chu He Zui Da 37 nmDe Diao Xie Fan Wei ;Chan Shu Liao La Man Guang Xian Zhong SRSDe Guang Shu Jing Hua Zuo Yong ,Huo De Jin Yan She Ji Xian De StokesJi Guang Shu Chu Lun Wen Qu De Yi Xi Lie Chuang Xin Cheng Guo ,Fa Biao Liao Duo Pian Lun Wen Bao Gao ,Bao Gua SCILun Wen 5Pian EILun Wen 1Pian Xue Zhu Hui Yi Bao Gao 2Pian ,Yi Ji Shou Quan Fa Ming Zhuan Li Yi Xiang Lun Wen De Zhu Yao Nei Rong He Chuang Xin Dian You Yi 1.5 mmBo Duan Er:YbGong Xian Guang Xian Ji Guang Qi 1. Li Yong VBGZuo Wei Bo Chang Xuan Ze Yuan Jian ,Cai Yong Liang Duan Bu Tong Chang Du (7 m, 17 m)De Er:YbGong Xian Zeng Yi Guang Xian ,Fen Bie Shi Xian Liao Gong Zuo Bo Chang Tong Shi Fu Gai C band He L bandDe Kuan Diao Xie Ji Guang Shu Chu Gai Gong Zuo Fa Biao Zai Qi Kan IEEE Photonics Technology Letters 25(15) 1488 (2013)Shang 2. Shou Ci Jiang Shuang VBGGuang Pu Zhai Hua Ji Zhu Ying Yong Yu Er:YbGong Xian Guang Xian Ji Guang Qi Zhong ,Huo De Liao Zhong Xin Bo Chang Wei 1545.3 nm, Xian Kuan Xiao Yu ~38 pm, Gong Lu Wei 19.4 WDe Ji Guang Shu Chu Zai Jin Yi Bu De Shi Yan Zhong ,Jiang Shuang VBGYi Bing Lian Pai Lie De Fang Shi Ying Yong Dao Er:YbGong Xian Guang Xian Ji Guang Qi Zhong ,Shi Xian Liao Shuang Bo Chang Du Li De Lian Xu Ke Diao Xie Shu Chu ,Shuang Bo Chang Jian Ju Cong 0.3 nmDao 29.2 nm,Dang Bo Chang Jian Ju Wei 0.3 nmShi ,Huo De Liao Zui Da Gong Lu 17.9 WShu Chu ,Xie Xiao Lu Da 28.6% Liang Xiang Gong Zuo Fen Bie Fa Zai Zai Qi Kan IEEE Journal of Quantum Electronics 50(2) 88 (2014) Applied Physics Express 7(3) 032702 (2014)Shang 3. Jie He Guang Xian Ji Guang Qi You Liang De San Re Neng Li Yu Ti Kuai Zeng Yi Jie Zhi Neng Liang Cun Chu Rong Liang Da De You Dian ,Shou Ci Jiang Kuan Diao Xie Er:YbGong Xian Guang Xian Ji Guang Zuo Wei Tm:YAGTao Ci Ji Guang Qi Beng Pu Yuan ,Huo De Liao Zhong Xin Bo Chang Wei 2013.2 nm, Zui Da Gong Lu Wei 3.9 WDe Ji Guang Shu Chu Gai Gong Zuo Fa Biao Zai Qi Kan Applied Physics Express 6(3) 092107 (2013)Shang Er 1.6 mmBo Duan La Man Guang Xian Ji Guang Qi 1. Dui Yu Jian Bian Zhe She Lu Duo Mo Guang Xian De La Man Guang Xian Ji Guang Qi ,Zai Beng Pu Guang Xian Xing Xi Shou Jin Si Tiao Jian Xia ,Li Yong Lang Bo Han Shu (Lambert function)Tui Dao Chu Liao Miao Shu Duo Mo Guang Xian Zhong Shou Ji La Man San She (SRS)Guo Cheng De Bo Dong Fang Cheng De Jie Xi Jie ,Bing Jiang Qi Ying Yong Dao Shi Ji De La Man Guang Xian Ji Guang Qi She Ji He Can Shu You Hua Zhong ,Qu De Liao Jiao Hao De Xiao Guo 2. Jiang Bo Chang Suo Ding De 1545 nm Er:YbGong Xian Guang Xian Ji Guang Qi Zuo Wei Beng Pu Yuan ,Zai Ji Yu Pu Tong Jian Bian Zhe She Lu Duo Mo Tong Xin Guang Xian He Te Shu She Ji De Shuang Bao Ceng La Man Guang Xian De La Man Guang Xian Ji Guang Qi Zhong Fen Bie Shi Xian Liao Jin Yan She Ji Xian De 1.658 mm StokesJi Guang Shu Chu Chan Shu Liao Jian Bian Zhe She Lu Duo Mo Guang Xian Zhong SRSDe Guang Shu Ji Jing Zuo Yong ,Fen Xi Liao Jie Yue Xing Zhe She Lu Duo Mo Guang Xian Zhong Bu Cun Zai Gai Guang Shu Jing Hua Zuo Yong De Yuan Yin 3. Zai Ji Yu Jian Bian Zhe She Lu Guang Xian De La Man Guang Xian Ji Guang Qi Zhong ,Zi You Yun Zhuan Zhuang Tai Xia Huo De Liao Zui Gao Gong Lu Wei 12.3 WDe Ji Guang Shu Chu ,Li Yong VBGBo Chang Suo Ding Hou ,Shu Chu Ji Guang Xian Kuan Jin Wei ~0.1 nm,Zhe Shi Mu Qian Suo Bao Dao De Wa Liang Ji La Man Guang Xian Ji Guang Qi Zhong Suo Huo De De Zui Zhai Xian Kuan ;Bo Chang Diao Xie Yun Zhuan Shi Huo De Liao Cong 1638.5 nmDao 1675.1 nmGong 37 nmDe Diao Xie Fan Wei ,Zhe Ye Shi La Man Guang Xian Ji Guang Qi Xiang Dang Gong Lu Shu Chu Xia Zui Kuan De Bo Chang Diao Xie Fan Wei Geng Kuan De Bo Chang Diao Xie Fan Wei Ke Wang Tong Guo Gai Bian Beng Pu Yuan De Gong Zuo Bo Chang Shi Xian Gai Gong Zuo Fa Biao Zai Qi Kan Optics Express 22(6) 6605 (2014)Shang ,Qie Gai Ke Diao Xie La Man Guang Xian Ji Guang Qi Yi Huo Fa Ming Zhuan Li Shou Quan (Shou Quan Hao :CN 102761048) 4. Dui Bao Ceng Beng Pu De La Man Guang Xian Ji Guang Qi Jin Xing Liao Chu Bu De Shi Yan Tan Suo Yan Jiu Chan Shu Liao Shuang Bao Ceng La Man Guang Xian Can Shu She Ji De Ji Ben Zhun Ze He Shuang Bao Ceng La Man Guang Xian Zhong De SRSHe Mo Shi Ji Fa Guo Cheng ,Bing Zui Zhong Zhi Cheng Shuang Bao Ceng La Man Guang Xian Zai Zi You Yun Zhuan He VBGBo Chang Suo Ding De Bao Ceng Beng Pu La Man Guang Xian Ji Guang Qi Zhong Fen Bie Shi Xian Liao Gong Lu Wei 13.2 W, 10.4 W De 1.658 mm StokesJi Guang Shu Chu Dui Bao Ceng Beng Pu La Man Guang Xian Ji Guang Qi De Jin Yi Bu Gong Lu Ding Biao Fang Da Gei Chu Liao Fen Xi He Tao Lun
title: Zhai Xian Kuan Er:YbGong Xian Guang Xian Ji Guang Beng Pu 1.6 mmBo Duan La Man Guang Xian Ji Guang Qi Yan Jiu
year: 2014

abstract: This editorial contains an overview of the contents of the current issue of the Photonics Letters of Poland, devoted mainly to optical metrology. A series of 14 papers deals with both technology as well as pure and applied physics. The scientific topic of the Photonic Letters of Poland, vol. 6(4)/2014 pertains measurements and characterization of photonic structures and systems as well as optical waveguides and nanolayers. The common denominator of all articles qualified for publication is widely understood, highly specialized optical metrology. The current issue of PLP presents investigations carried out in selected Polish scientific and research centers. The group from the Institute of Electron Technology in Warsaw has presented very recent results of investigations into quantum cascade lasers highly technologically advanced systems. A paper of the group from West Pomeranian University of Technology in Szczecin is devoted to analyses and investigations of quantum wells structures The authors from the Department of Optoelectronics at the Silesian University of Technology (SUT) in Gliwice present in several papers analyses, studies and researches concerning integrated optics structures including: interference, multimode interference, structures and systems of differential interferometry. The group from this Department also shows researches of topography and morphology of graphene and graphene oxide with respect to their application in optical and electrical sensors. The current issue contains also the work, in which the results of investigations are presented into optical fibers in terms of their application in optical telecommunications carried out by the Group from the Faculty of Electronics at the Wroclaw University of Technology. Birefringence measurements of polymer photonic crystal fibers infiltrated with liquid crystals by using the effect of light depolarization are presented by the authors from the Faculty of Physics at the Warsaw University of Technology. E mail: Tadeusz.Pustelny@polsl.pl In the paper entitled "A low temperature operated NO2 gas POF sensor based on conducting graft polymer" from the Department of Optoelectronics at SUT in Gliwice novel results are presented of investigations concerning a high sensitive gas sensor based on a polymer optical fiber. Polymer optical fibers are also the topic of the paper elaborated by a group of the Optical Fiber Technology Laboratory at the University of Lublin. The Group has examined the impact of electromagnetic radiation of high energy on mechanical and optical properties of polymeric materials for their application in the production of optical fibers. A group from the Gdansk University of Technology has presented the possibility of using polarization sensitive optical coherence tomography in the inspection of ceramic materials. A group from the Department of Metrology and Optoelectronics at the Poznan University of Technology presents a new approach to objective evaluation of human visual acuity. Another group from the Faculty of Physics at the Warsaw University of Technology shows the results of their studies on the influence of pitch and birefringence on solitons propagation at the disclination lines in a wedgeshaped planarly oriented sample of the chiral nematic liquid crystal. A very interesting subject concerning the application of a multi camera 3D Digital Image Correlation (DIC) system with the procedure of spatial data stitching is presented by the group from the Faculty of Mechatronics at the Warsaw University of Technology. The system diversifies single DIC setup capabilities used for displacement and strain measurements of big and complex structures such as industrial installations. It should be recognized that the papers contained in the volume 6(4)/2014 are interesting, and the investigations presented in the articles will be continued. Highly Specialized Optical Metrology
author_names: Tadeusz Pustelny
title: Highly Specialized Optical Metrology
year: 2014

abstract: http:/dx.doi.org/10.1016/j.patrec.2014.06.004 0167 8655/ 2014 Published by Elsevier B.V. This Special Edition in Celebration of Maria Petrou, was conceived shortly after she died in October 2012 and was in response to friends and colleagues who wanted to remember both her personal warmth and exceptional scientific achievements. The idea was to have a variety of contributions including novel scientific articles, reviews of topics close to Maria's areas of interest, and personal recollections from friends and colleagues. The call for papers was issued in May 2013 and resulted in 27 submissions. Of these about 8 were of a non technical nature and have been edited together to form the 'Homage to Maria Petrou' which is a compendium of recollections of various interactions with Maria, spanning her whole career. The remaining articles were of a technical nature, and have been peer reviewed according to the usual process followed in Pattern Recognition Letters. This peer review has produced 9 revised papers, which are also included in the Special Edition. These papers are authored by former students, colleagues and followers of Maria's work. All cite her contributions to the field and place themselves in the context of her work. Several of the articles list Maria as a posthumous co author. The technical contributions as follows: The paper 'Progress in the restoration of image sequences are degraded by atmospheric turbulence' by Ronen Gal, Nahum Kiryati and Nir Sochen reflects Maria's long standing interest in remote sensing, and explains how atmospheric degradation can be overcome in motion sequences. This interest in remote sensing was one of her earliest in the field of image analysis, and grew out of her first post in the area as a postdoc in the Department of Geography at Reading University. This lead her to work extensively on the problem of mixed pixels, and this interest is reflected in the paper 'Subpixel temporal spectral imaging' authored by former student Olga Duran and posthumously by Maria herself. Finally under the heading of remote sensing, a second posthumous paper 'A rule based classification methodology to handle uncertainty in habitat mapping employing evidential reasoning and fuzzy logic' authored by Zisis Petrou et al. describes how her work in AI and pattern recognition can be brought to bear on image interpretation problems in remote sensing. Maria always described herself as having a soft spot for geometry, and ascribed this to sharing her nationality with Pythagoras. The paper 'Rotation invariant co occurrence features based on digital circles and discrete Fourier transform' by Antonio Fernandez and Francesco Bianconi builds on this interest together with her long standing fascination with the Hough transform to present a new shape characterisation technique. Maria enjoyed teaching and preparing innovative teaching material. She also thought a great deal about how people learn and how you should best help them to learn. Many of her ideas here influenced the development of the tower of knowledge which is described in 'Tower of Knowledge for Scene Interpretation: A Survey' by Mai Xu and Zulin Wang. After first moving to Surrey, Maria developed an interest in the renormalisation group approach to image processing. This was a natural direction for her not only since the method draws on ideas from physics, but also that the original work in this area was performed by fellow Greek, Basilis Gidas. In the paper 'Fast pose invariant face recognition using super coupled multiresolution Markov Random Fields on a GPU' by Shervin Rahimzadeh Arashloo and Josef Kittler, the renormalisation group approach is applied to face recognition and efficiently implemented on a GPU. In her first post in computer vision at Reading University, Maria worked on an Alvey project with David Hogg, and was fascinated by his then pioneering work on modelling walking people. The paper 'Identification of people walking along curved trajectories' by Yumi Iwashita, Koichi Ogawara and Ryo Kurazume, captures this long standing interest, as does the paper 'Human Activity Recognition From 3D Data: A Review' by Lu Xia and Jake Aggarwal, which shows how far this field has moved over the past 25 years. As a physicist by training, Maria was instinctively drawn to problems involving light, and this influenced her recent work on photometric stereo. The papers 'Error analysis of photometric stereo with colour lights' by Martin Klaudiny and Adrian Hilton and 'Cast Shadows estimation and synthesis using the Walsh Transform' by Vasileios Argyriou, Ferdinand Redelinghuys and Maria herself, both address this research interest, with new insights into photometric stereo and how it can be employed in the real world. In addition to the scientific papers and the compendium of recollections, this special edition also contains accounts of her work at the University of Surrey and CERTH in Thessaloniki, together with a reprint of her obituary which appeared in the Guardian. We thank the authors of the technical papers and the personal recollections for providing us with the material for this celebration of Maria's life. We also thank Gabriella Sanniti di Baja for encouraging us to embark on editing it, and for her patience when the project ran slowly. We are also very grateful to the staff at Elsevier, especially Journal Manager Janet Amali Joseph who helped us bring the special edition into being. This is of course just one of several tributes to Maria. There will be a workshop in the Autumn of 2014 at CERTH to celebrate her scientific achievements. The IAPR, of which Maria served as both Newsletter Editor and Treasurer, among other posts, plans to remember Maria through a named biennial award to a female scientist. At the time of going to press, details of the award are still being discussed, but should be finalised in time for approval at the IAPR Governing Board Meeting in Stockholm, and an announcement during ICPR.
author_names: Edwin R Hancock

Josef Kittler
title: Celebrating the life and work of Maria Petrou
venue: Pattern Recognit. Lett.
year: 2014

abstract: El objetivo de esta tesis es contribuir al desarrollo de circuitos complejos en chips fotonicos de silicio. Para ello, se centra en dos retos principales: Por un lado, trata de elucidar la dinamica temporal de los efectos no lineales en silicio, especialmente la interaccion de los portadores libres con los pulsos opticos en el dominio del tiempo. Por otro lado, la tesis pretende contribuir a la miniaturizacion de los circuitos fotonicos mediante la integracion de guias fotonicas con guias plasmonicas.Entre los resultados mas destacables de esta tesis se encuentra la observacion, por primera vez, de compresion de pulsos de picosegundos mediante el efecto soliton (Nature Communications 5, 3160, 2014) Hasta la fecha no habia sido posible esta demostracion debido a la fuerte presencia de absorcion de dos fotones y portadores libres en longitudes de onda de comunicaciones. Este hito ha sido posible gracias al uso de una guia cristal fotonico con luz lenta y su dispersion especialmente disenada. En esta misma linea de investigacion se ha logrado tambien el descubrimiento de nuevos efectos no lineales en el dominio del tiempo relacionados con la presencia de los portadores libres en la guia. Incluso mas importante es la propuesta de usar la dispersion de la guia como mecanismo de control para los efectos generados por los portadores libres, resolviendo el problema mas grave de la optica no lineal en silicio.Otro resultado destacable es la demostracion numerica de acoplamiento eficiente entre guias de cristal fotonico y lineas de transmision plasmonicas en el infrarrojo medio, que presenta gran potencial en la miniaturizacion de circuitos en esta region del espectro (Applied Physics Letters 104, 011105 2014).Esperamos que los resultados presentados en esta tesis conlleven un avance en fotonica de silicio, posibilitando mayor funcionalidad y miniaturizacion de circuitos fotonicos en una plataforma compatible con las capacidades de fabricacion de silicio.
author_names: Andrea Blanco Redondo
title: Linear and nonlinear devices in silicon photonic waveguides
year: 2014

abstract: We report on the experimental observation of coherent phonon boundary scattering in micro scale phononic crystals (PnCs) at room temperature. We show that the neglecting coherent boundary scattering leads to gross overestimation of the measured thermal conductivities of the PnC samples. We introduce a hybrid model that accounts for partial coherent and partial incoherent phonon boundary scattering. Excellent agreement with the experiment is achieved. Almost all physical processes produce heat as a byproduct making thermoelectric (TE) systems very attractive for energy scavenging applications. Energy conversion in TE devices is based on the so called Peltier effect 1 Here the temperature gradient resulting from expelled heat is used to force electronic transport resulting in an electric current. As such, heat transported via phonons represents a leakage mechanism and serves to reduce the efficiency of TE systems. Indeed the inability to suppress or eliminate the relative phonon contribution to thermal transport as compared to the electronic one has hindered the development of efficient TE devices. Recently, it has been proposed that coherent boundary scattering in micro scale phononic crystals (PnCs) may hold the key to solving this problem by scattering phonons with minimal influence on electrons 2 4 PnCs are artificial structures with a periodic variation in mechanical impedance brought about by the introduction of holes or plugs of one material into a homogenous matrix of another 5 8 This periodic variation results in rich phonon dispersion with unusual behaviors 9 In this communication, we focus on micro scale PnCs formed by the introduction of air holes in a Si matrix with minimum feature sizes 100nm. As a phonon population traverses such a lattice, it can undergo two types of scattering processes: simple incoherent scattering as a result of encountering a boundary; and coherent Bragg like 7 scattering due to the periodic topology of the artificial lattice of air holes. In the first type, it is assumed that the phonons will retain no phase information after each scattering event. This implies that the phonon dispersion remains unaltered due to the introduction of the air holes. In the second type, on the other hand, it is assumed that the phase is preserved throughout several scattering events thus enabling coherent interference to occur. Consequently, this would imply a modified phonon dispersion that is sensitive to the topology of the PnC air hole lattice. Practically, this can have profound implications because: while incoherent boundary scattering depends only on the shape, size, and separation of the holes; coherent boundary scattering additionally depends on the symmetry and topology by which these holes are distributed. Thus, the existence of coherent scattering would allow one to further reduce the thermal conductivity of the underlying material without the need for additional boundaries (e.g. more air holes) by simply altering the PnC topology. The claim of coherent phonon scattering in micro scale Si/Air PnCs at room temperature has generated widespread controversy in the literature given the relatively small wavelength characteristic of the phonon population dominating the thermal transport 3,10 14 Experimentally however, the thermal conductivity (k) of PnC samples have consistently been measured to be significantly lower than that of an unpatterned film 2,4,11,13,14 In fact far lower than what would be expected due to the combination of material removal and simple incoherent boundary scattering 2,4,13 thereby suggesting that another k reduction mechanism, possibly coherent scattering, must be taking place. The The 2nd Intenational Conference on Phononics and Thermal Energy Science (PTES2014) Shanghai, China, May 26 May 31, 2014 controversy was heightened by the discovery that ~50% of k in Si is carried by phonons with mean free paths (MFPs) from 100nm up to 1mm15, which was recently verified experimentally 16 Since it is logical to assume that a phonon remains coherent over its MFP, we suggest here that the MFP, rather than wavelength, should be used when judging whether or not coherent scattering events can take place. In which case, a large enough fraction of the phonon population could travel sufficient distances to experience the PnC lattice periodicity and thus undergo coherent scattering. We report on the experimental observation of coherent phonon boundary scattering in micro scale phononic crystals (PnCs) at room temperature. We investigate the existence of coherent phonon boundary scattering resulting from the periodic topology of the PnCs and its influence on the thermal in silicon. To delaminate incoherent from coherent boundary scattering, PnCs with a fixed minimum feature size, differing only in the unit cell topologies, were fabricated. A suspended island platform was used to measure the thermal conductivity. We show that the neglecting coherent boundary scattering leads to gross overestimation of the measured thermal conductivities of the PnC samples. We introduce a hybrid model that accounts for partial coherent and partial incoherent phonon boundary scattering. Excellent agreement with the experiment is achieved emphasizing the influence of coherent zone folding in PnCs. Our results yield conclusive evidence that significant room temperature coherent phonon boundary scattering does indeed take place. References 1 Slack, G. A. CRC Handbook of Thermoelectrics. (CRC Press, 1995) Hopkins, P. E. et al. Reduction in the Thermal Conductivity of Single Crystalline Silicon by Phononic Crystal Patterning. Nano Lett 11, 107 112, doi:Doi 10.1021/Nl102918q (2011) 3 Reinke, C. M. et al. Thermal conductivity prediction of nanoscale phononic crystal slabs using a hybrid lattice dynamics continuum mechanics technique. AIP Advances 1, 041403 041414 (2011) 4 Yu, J. K. Mitrovic, S. Tham, D. Varghese, J. Heath, J. R. Reduction of thermal conductivity in phononic nanomesh structures. Nature Nanotechnology, 5, 718 721, (2010) 5 Reinke, C. M. Su, M. F. Olsson, R. H. El Kady, I. Realization of optimal bandgaps in solid solid, solid air, and hybrid solid air solid phononic crystal slabs. Appl Phys Lett 98, doi:Artn 061912 Doi 10.1063/1.3543848 (2011) 6 Su, M. F. Olsson, R. H. Leseman, Z. C. El Kady, I. Realization of a phononic crystal operating at gigahertz frequencies. Appl Phys Lett 96, 053111 (053113 pp. doi:10.1063/1.3280376 (2010) 7 Olsson, R. H. III et al. in IEEE International Ultrasonics Symposium. 1150 1153. 8 El Kady, I. Olsson, R. H. III Fleming, J. G. Phononic band gap crystals for radio frequency communications. Appl Phys Lett 92, 233504 233501 233503, doi:10.1063/1.2938863 (2008) 9 Kushwaha, M. S. Halevi, P. Dobrzynski, L. Djafari Rouhani, B. Acoustic band structure of periodic elastic composites. Physical Review Letters 71, 2022 2025 (1993) 10 Hao, Q. Chen, G. Jeng, M. S. Frequency dependent Monte Carlo simulations of phonon transport in two dimensional porous silicon with aligned pores. Journal of Applied Physics 106, 114321 114310 (2009) 11 Tang, J. et al. Holey Silicon as an Efficient Thermoelectric Material. Nano Lett 10, 4279 4283, doi:10.1021/nl102931z (2010) 12 Jain, A. Yu, Y. J. McGaughey, A. J. H. Phonon transport in periodic silicon nanoporous films with feature sizes greater than 100 nm. Physical Review B 87, 195301 (2013) 13 Bongsang, K. et al. in Micro Electro Mechanical Systems (MEMS) 2012 IEEE 25th International Conference on 176 179 (2012) 14 El Kady, I. et al. Phonon Manipulation with Phononic Crystals. (Sandia National Laboratories, 2012) 15 Esfarjani, K. Chen, G. Stokes, H. T. Heat transport in silicon from first principles calculations. Physical Review B 84, 085204 (2011)
author_names: Ihab El-Kady

Charles M Reinke

Seyedhamidreza Alaie

Drew F Goettler

Mehmet F Su

Zayd C Leseman
title: Thermal Transport in Micro Scale Phononic Crystals: Observation of Coherent Phonon Scattering at Room Temperature.
year: 2014

abstract: El principal objetivo de esta Tesis Doctoral es el estudio analitico y numerico de dispositivos multipuerta, MuG del ingles Multiple Gate, y compuestos semiconductores III V, como alternativas tecnologicas para continuar el proceso de escalado del transistor MOSFET mas alla del nodo tecnologico de 22nm [delAlamo2011] Con este objetivo, se han implementado simuladores electrostaticos y de transporte capaces de resolver las ecuaciones de Schrodinger, Poisson y Boltzmann en un gas de electrones unidimensional. El simulador electrostatico esta basado en la aproximacion de masa efectiva no parabolica [Jin2007] siendo capaz de tratar con geometrias, materiales y orientaciones arbitrarias para obtener las distribuciones de carga y potencial en la seccion transversal bidimensional de la estructura MuG [Marin2012] El simulador de transporte linealiza la ecuacion de transporte unidimensional de Boltzmann, usando la aproximacion de tiempo de relajacion del momento, MRT del ingles Momentum Relaxation Time, [Esseni2011] resolviendo el sistema resultante de manera implicta. Ademas incluye modelos novedosos de dispersion debida a rugosidad superficial [Stanojevic2013,Jin2013] cargas coulombianas [Ning1972,Gamiz1994,Gamiz2002] fonones bulk [Kotlyar2004,Jin2007, Ashcroft1976,Tienda2012] fonones opticos polares [OReagan2010,Wang1993,Leburton1992] y desorden por aleacion [Bastard1988,Pham2007] Adicionalmente, se ha desarrollado un modelo completamente analitico que describe el comportamiento electrostatico de nanohilos [Marin2012b] NW del ingles nanowire. Es, hasta donde alcanza nuestro conocimiento, la descripcion analitica mas completa de la distribucion de la carga y el potencial en NWs cilindricos fabricados con materiales III V presentada en la literatura hasta la fecha. El modelo proporciona expresiones analiticas para calcular la energia de las subbandas y las funciones de onda del valle Gamma, teniendo en cuenta la penetracion de la funcion de onda en el aislante y la discontinuidad en la masa efectiva en la interfaz entre el aislante y el semiconductor, asi como estadistica de Fermi Dirac, confinamiento bidimensional de los portadores y la no parabolicidad de la banda de conduccion. Tambien permite incluir un perfil arbitrario de estados en la interfaz. Haciendo uso de las aproximaciones numerica y analitica, se realizan varios estudios relevantes de caracter electrostatico y del transporte en Trigates y NWs. Estas dos estructuras son especialmente siginificativas puesto que constituyen las arquitecturas MuG mas consolidadas. Los Trigate introducen pocos cambios respecto al proceso de fabricacion planar tradicional, al mismo tiempo que incrementan el control electrosatico del canal [Radosavljevic2010,Colinge2004] Los NWs son la evolucion ultima de las arquitecturas MuG, proporcionando la mayor supresion de los efectos de canal corto [delAlamo2011] De esta manera, usando el enfoque analitico se estudia la influencia del tamano del dispositivo y el tipo de material en la carga en inversion, la corriente de drenador, la capacidad de puerta y la tension umbral en nanohilos III V [Marin2013,Marin2014] Para completar el estudio analitico, los simuladores numericos desarrollados se han utilizado para comprender el papel del valle L en las propiedades electrostaticas y de transporte, concluyendo que tiene un influencia no despreciable a medida que el tamano del dispositivo se reduce. El enfoque numerico se usa tambien para comparar el comportamiento de estructuras Trigate de Si y materiales III V. El impacto de la anchura del Trigate y de la puerta trasera es analizada, mostrando que: a) el incremento de la movilidad observado para Trigates III V se degrada cuando la anchura se reduce y b) el control de la puerta trasera sobre la tension umbral afecta directamente a la movilidad [Ruiz2013,Ruiz2013] Finalmente, la rugosidad superficial se revela como el principal mecanismo de dispersion limitador de la movilidad para la gran mayoria de tamanos y materiales a alto campo, siendo su comportamiento a bajo campo mas complicado y muy dependiente del tamano y material empleados. Referencias [Ashcroft1976] N.W. Ashcroft and N.D. Mermin. Solid state physics. Saunders College, 1976. [Bastard1988] G. Bastard. Wave mechanics applied to semiconductor heterostructures. Monographies de physique. Les Editions de Physique, 1988. [Colinge2004] J. P. Colinge. Multiple gate SOI MOSFETs. Solid State Electronics, 48:897,Jun 2004. [delAlamo2011] J.A. del Alamo. Nanometre scale electronics with III V compound semiconductors. Nature, 479:317, Nov 2011. [Esseni2011] D. Esseni, P. Palestri, and L. Selmi. Nanoscale MOS Transistors: Semi classical Transport And Applications. Cambridge University Press, New York. USA, 2011. [Gamiz1994] F. Gamiz, J. A. Lopez Villanueva, J. A. Jimenez Tejada, I. Melchor, and A. Palma. A comprehensive model for coulomb scattering in inversion layers. Journal of Applied Physics, 75:924, 1994. [Gamiz2002] F. Gamiz, F. Jimenez Molinos, J. B. Roldan, and P. Cartujo Cassinello. Coulomb scattering model for ultrathin silicon on insulator inversion layers. Applied Physics Letters, 80:3835, 2002. [Jin2007] S. Jin, M. V. Fischetti, and T. Tang. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity. Journal of Applied Physics, 102:083715, Oct 2006. [Jin2013] S. Jin, S. M. Hong, W. Choi, K. H. Lee, and Y. Park. Coupled drift diffusion (DD) and multi subband boltzmann transport equation (MSBTE) solver for 3D multi gate transistors. In Simulation of Semiconductor Processes and Devices (SISPAD) 2013 International Conference on, page 348, Sept 2013. [Kotlyar2004] R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, and M. D. Giles. Assessment of room temperature phonon limited mobility in gated silicon nanowires. Applied Physics Letters, 84:5270, 2004. [Leburton1992] J. P. Leburton. Optic phonon limited transport and anomalous carrier cooling in quantum wire structures. Physical Review B, 45:11022, 1992. [Marin2012] E. G. Marin, F. G. Ruiz, A. Godoy, I. M. Tienda Luna, and F. G amiz. Effect of interfacial states on the technological variability of Trigate MOSFETs. In Silicon Nanoelectronics Workshop (SNW) 2012 IEEE, 2012. [Marin2012] E. G. Marin, F. G. Ruiz, I. M. Tienda Luna, A. Godoy, P. Sanchez Moreno, and F. Gamiz. Analytic potential and charge model for III V Surrounding Gate MOSFETs. Journal of Applied Physics, 112:084512, Oct 2012. [Marin2013] E.G. Marin, F.J.G. Ruiz, I.M. Tienda Luna, A. Godoy, and F. Gamiz. Analytical gate capacitance modeling of III V nanowire transistors. IEEE Transactions on Electron Devices, 60(5):1590, May 2013. [Marin2014] E.G. Marin, F.G. Ruiz, I.M. Tienda Luna, A. Godoy, and F. Gamiz. Analytical model for the threshold voltage of III V nanowire transistors including quantum effects. Solid State Electronics, 92:28, Feb 2014. [Ning1972] T. H. Ning and C. T. Sah. Theory of scattering of electrons in a nondegenerate semiconductor surface inversion layer by surface oxide charges. Physical Review B, 6:4605, 1972. [OReagan2010] T. P. OReagan, M. V. Fischetti, B. Soree, S. Jin, W. Magnus, and M. Meuris. Calculation of the electron mobility in III V inversion layers with high dielectrics. Journal of Applied Physics, 108:103705, 2010. [Pham2007] A. T. Pham, C. Jungemann, and B. Meinerzhagen. Physics based modeling of hole inversion layer mobility in strained SiGe on insulator. IEEE Transactions on Electron Devices, 54:2174, 2007. [Radosavljevic2010] M. Radosavljevic, G. Dewey, J. M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu Kung, et al. Non planar, multi gate InGaAs quantum well field effect transistors with high k gate dielectric and ultra scaled gate to drain/gate to source separation for low power logic applications. In Electron Devices Meeting (IEDM) 2010 IEEE International, page 126, Dec 2010. [Ruiz2013] F. G. Ruiz, E. G. Marin, I. M. Tienda Luna, A. Godoy, C.Martinez Blanque, and F. Gamiz. Influence of the back gate bias on the electron mobility of a trigate MOSFETs. In Simulation of Semiconductor Processes and Devices (SISPAD) 2013 International Conference on, page 304, 2013. [Ruiz2012] F. G. Ruiz, E. G. Marin, I. M. Tienda Luna, A. Godoy, C.Martinez Blanque, and F. G ?miz. Back gate biasing influence on the electron mobility and the a threshold voltage of ultra thin box Multigate MOSFET. In Silicon Nanoelectronics Workshop (SNW) 2013 IEEE, 2012. [Stanojevic2013] Z. Stanojevic and H. Kosina. Surface roughness scattering in non planar channels: The role of band anisotropy. In Simulation of Semiconductor Processes and Devices (SISPAD) 2013 International Conference on, page 352, Sept 2013. [Tienda210] I. M. Tienda Luna, F. G. Ruiz, A. Godoy, E. G. Marin. and F. G amiz. Dependence of the phonon limited mobility in arbitrarily oriented si nanowires. In Computational Electronics (IWCE) 2010 15th International Workshop on, 2012. [Wang1993] T. Wang and T.W. Chen T. H. Hsieh. Quantum confinement effects on low dimensional electron mobility. Journal of Applied Physics, 74:426, 1993.
author_names: Nestor Ricardo Gonzalez Marin
title: Modeling and simulation of semiconductor nanowires for future technology nodes
year: 2014

abstract: In recent years, gallium phosphide based nanostructures, particularly indium gallium arsenide quantum dots (QD) embedded in gallium phosphide, have attracted interest of a growing number of research groups worldwide. InxGa1 xAs/GaP QDs are a possible solution for two current issues of the semiconductor industry: Monolithic integration of photonic devices based on III V semiconductors with silicon based electronics, and realization of a fast and non volatile electronic memory. The present thesis lays the groundwork for technological applications of InxGa1 xAs/ GaP QDs. The fabrication of InxGa1 xAs/GaP QDs by metalorganic vapour phase epitaxy and control of their structural properties like size and areal density via parameters of the epitaxial process are being developed. The structure of the QDs can be linked directly to their optical and electronic properties. Thus, the QDs can be tailored to fit a specific application. The electronic structure of InxGa1 xAs/GaP heterostructures generally is indirect in reciprocal and/or direct space due to high material strain. For the first time, the present work demonstrates a way to reduce this material strain and to fabricate InxGa1 xAs/GaP QDs with high efficient optical recombination channels, which is crucial for photonic devices. Besides technological applications, InxGa1 xAs/GaP QDs thereby present an ideal system to study fundamental interaction processes of QDs with surrounding material in dependence upon their electronic structure. First detailed analysis of the electronic structure of InxGa1 xAs/GaP QDs by means of optical and capacitance spectroscopy is presented. The theoretically predicted electronic structure of InxGa1 xAs/GaP QDs at the threshold between indirect and direct optical recombinations is confirmed. An evaluation of the technological potential of InxGa1 xAs/GaP QDs for electronic memories yields a storage time at room temperature three orders of magnitude larger compared to InxGa1 xAs/GaAs QDs. A non volatile memory can be realized by systematic further development of the GaP based material system. Teile dieser Arbeit wurden bereits veroffentlicht: G. Stracke, E. M. Sala, S. Selve, T. Niermann, A. Schliwa, A. Strittmatter und D. Bimberg, Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots Applied Physics Letters 104 (12) 123107 (2014) C. Prohl, A. Lenz, D. Roy, J. Schuppang, G. Stracke, A. Strittmatter, U. W. Pohl, D. Bimberg, H. Eisele und M. Dahne, Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale, Applied Physics Letters 102 (12) 123102 (2013) G. Stracke, A. Glacki, T. Nowozin, L. Bonato, S. Rodt, C. Prohl, A. Lenz, H. Eisele, A. Schliwa, A. Strittmatter, U. W. Pohl und D. Bimberg, Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer Applied Physics Letters 101 (22) 223110 (2012)
author_names: Gernot Stracke
title: Wachstum und Charakterisierung von InGaAs Quantenpunkten auf GaP Substraten
year: 2014