Query: Carbon-based electronics

Candidate papers:

abstract: The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.
author_names: Phaedon Avouris

Zhihong Chen

Vasili Perebeinos
title: Carbon based electronics.
venue: Nature nanotechnology
year: 2007

author_names: Philipp Maisch

Luca Lucera

Christoph J Brabec

Hans-J Egelhaaf
title: Flexible Carbon based Electronics: Flexible Solar Cells
year: 2018

abstract: We report for the first time an innovative visible light photolabile poly(ionic liquid) (VP PIL) The as prepared VP PIL features low Tg (47 degC) good thermal stability (Td 284 degC) and solubility in ranges of polar solvents. Upon blue light irradiation ~452 nm) C O bonds of picolinuim units are photocleaved, and the charges of PILs are simultaneously converted from positive to negative. Taking full advantages of these excellent properties of VP PIL, a visible light degradable film for the first time is fabricated. Moreover, to demonstrate its applications in electronics, we prepared high quality VP PIL containing conductive ink for flexible interconnects and graphene electrodes for supercapacitors.
author_names: Tongtong Zhou

Yuan G Lei

Hanzhi Zhang

Ping Zhang

Casey Yan

Zijian Zheng

Yongming Chen

You Yu
title: Visible Light Photolabile, Charge Convertible Poly(ionic liquid) for Light degradable Films and Carbon Based Electronics.
venue: ACS applied materials interfaces
year: 2016

abstract: High quality yttrium oxide (Y(2)O(3) is investigated as an ideal high kappa gate dielectric for carbon based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of yttrium on sp(2) carbon framework, ultrathin (about few nm) and uniform Y(2)O(3) layers have been directly grown on the surfaces of carbon nanotube (CNT) and graphene without using noncovalent functionalization layers or introducing large structural distortion and damage. A top gate CNT field effect transistor (FET) adopting 5 nm Y(2)O(3) layer as its top gate dielectric shows excellent device characteristics, including an ideal subthreshold swing of 60 mV/decade (up to the theoretical limit of an ideal FET at room temperature) The high electrical quality Y(2)O(3) dielectric layer has also been integrated into a graphene FET as its top gate dielectric with a capacitance of up to 1200 nF/cm(2) showing an improvement on the gate efficiency and on state transconductance of over 100 times when compared with that of its back gate counterpart.
author_names: Zhenxing Wang

Huilong Xu

Zhiyong Zhang

Sheng Wang

Li Ding

Qingsheng Zeng

Leijing Yang

Tian Pei

Xuelei Liang

Min Gao

Lian-Mao Peng
title: Growth and performance of yttrium oxide as an ideal high kappa gate dielectric for carbon based electronics.
venue: Nano letters
year: 2010

abstract: Carbon based nanomaterials such as carbon nanotubes (CNTs) and graphene, which possess superior electrical, thermal and mechanical properties, have been proposed as alternative materials for future electronics. The proposed applications span from the device level, replacing silicon based transistors, with single walled carbon nanotubes (SWCNTs) or graphene, to packaging level using multi walled carbon nanotubes (MWCNTs) for interconnects. To further exploit the potential of carbon based electronics in electronic packaging, a novel 3D carbon based electronic system is targeted in this thesis. In order to achieve the goal of a 3D carbon based electronic system, this thesis addresses some of the technical issues including material synthesis, process compatibility and system integration. First of all, the chemical vapor deposition (CVD) synthesis of horizontally aligned SWCNTs (HA SWCNTs) vertically aligned MWCNTs (VA MWCNTs) and bilayer graphene were investigated for material preparation. For the HA SWCNTs on the ST cut quartz substrate, it has been found that adding a top heater is critical for synthesis of high quality HA SWCNTs in a cold wall reactor. The catalyst engineering of MWCNTs in a hexagonal pattern was performed to achieve high aspect ratio MWCNT bundles for through silicon via (TSV) interconnects. In addition, a nucleation activity model has been proposed as an explanation for the fast and controllable synthesis of bilayer graphene on a copper foil in the cold wall CVD. The transfer of CNTs and graphene was conducted to circumvent material synthesis incompatibilities with current semiconductor and packaging processes. The PET frame was utilized to ease the HA SWCNTs transfer during the transportation. In particular, tape assisted transfer of MWCNT bundles for TSVs has been proposed and experimentally demonstrated to increase the yield and efficiency. After the transfer of VA MWCNT bundle into the via, different polymers were used for filling the gap between the VA MWCNT bundle and the side walls of the via, and their performance was investigated and compared. In addition, a double densification process has been developed to overcome the tilting issue of the high aspect ratio VA MWCNTs bundles for the TSV interconnect. For bubbling transfer of graphene, a consolidation polydimethylsiloxane (PDMS) layer was added on top of polymathic methacrylate (PMMA) layer in order to avoid the cracks caused by bubbles. In order to solve the high resistivity issue of pure VA MWCNTs filled TSV interconnects, a novel CNT Cu nanocomposite has been developed. This composite material consisted of high aspect ratios, VA MWCNTs deposited and coated by Cu, and exhibited the same order of magnitude resistivity as Cu, but with a similar thermal expansion performance to silicon. In parallel, attempts were made to stack pure VA MWCNT filled TSVs and CNT Cu nanocomposite filled TSV. In the end, a via last based process for 3D integration was proposed and demonstrated. Electrical characterization was carried out at each step of the 3D integration process.
author_names: Wei Mu
title: 3D Integration of Carbon Based Electronics
year: 2016

abstract: Abstract Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high mobility and ability to carry high current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD) physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided.
author_names: Srikar Jandhyala
title: Atomic layer deposition of dielectrics for carbon based electronics
year: 2013

author_names: Ashok Srivastava

Jose M Marulanda

Yao Xu

Ashwani K Sharma
title: Carbon Based Electronics: Transistors and Interconnects at the Nanoscale
year: 2015

abstract: Graphene forms an important two dimensional (2D) material class that displays both a high electronic conductivity and optical transparency when doped. Yet, the microscopic origin of the doping mechanism in single sheet or bulk intercalated systems remains unclear. Using large scale ab initio simulations, we show the graphene surface acts as a catalytic reducing/oxidizing agent, driving the chemical disproportionation of adsorbed dopant layers into charge transfer complexes which inject majority carriers into the 2D carbon lattice. As pertinent examples, we focus on the molecular SbCl(5) and HNO(3) intercalates, and the solid compound AlCl(3) Identifying the microscopic mechanism for the catalytic action of graphene is important, given the availability of large area graphene sheets, to spur research into new redox reactions for use in science and technology.
author_names: Razvan A Nistor

Dennis M Newns

Glenn J Martyna
title: The role of chemistry in graphene doping for carbon based electronics.
venue: ACS nano
year: 2011

abstract: Carbon based nanomaterials such as carbon nanotubes (CNTs) and graphene, which possess superior electrical, thermal and mechanical properties, have been proposed as alternative materials for future electronics. The proposed applications span from the device level, replacing silicon based transistors, with single walled carbon nanotubes (SWCNTs) or graphene, to packaging level using multi walled carbon nanotubes (MWCNTs) for interconnects. To further exploit the potential of carbon based electronics in electronic packaging, a novel 3D all carbon based electronic system is targeted in this thesis. In order to achieve the goal of a 3D carbon based electronic system, this thesis addresses some of the technical issues including material synthesis, process compatibility and system integration. First of all, the synthesis of horizontally aligned SWCNTs (HA SWCNTs) vertically aligned MWCNTs (VA MWCNTs) and graphene were investigated for material preparation. Especially, growth of HA SWCNTs on a ST cut quartz substrate was the first time demonstrated in ac low pressure cold wall CVD with acetylene as a carbon precursor. In addition, the catalyst engineering of MWCNTs in a hexagonal pattern was performed to achieve high aspect ratio MWCNT bundles for through silicon via (TSV) interconnects. The transfer of CNTs and graphene was conducted to circumvent material synthesis incompatibilities with current semiconductor and packaging processes. In particular, tape assisted transfer of MWCNT bundles for TSVs has been proposed and experimentally demonstrated to increase the yield and efficiency. After the transfer of VA MWCNT bundle into the via, different polymers were used for filling the gap between the VA MWCNT bundle and the side walls of the via, and their performance was investigated and compared. In parallel, attempts were made to stack VA MWCNT filled TSVs, with and without using isotropic conductive adhesive. Electrical characterization was carried out at each step of the fabrication process.
author_names: Wei Mu
title: Towards 3D Integration of Carbon Based Electronics
year: 2015

abstract: Within the next decade, scientists and engineers who have been making silicon based electronic devices smaller and smaller will finally bump into fundamental limitations on the size of such devices. Some labs, though, are trying to smash through those limitations by developing new types of nanoscale electronics based on organic molecules or carbon nanotubes. Two advances in this quest were reported last week: A research team at Yale University and Rice University, Houston, has shown that an assemblage of wirelike organic molecules can function reversibly as a switch to turn current on and off Science 286 1550 (1999) And a team based at Delft University of Technology, the Netherlands, has shown experimentally that kinked nanotubes also can function as electronic devices Nature 402 273 (1999) To make the first advance, graduate student Adam M. Rawlett, working in chemistry professor James M. Tour's lab at Rice, synthesized a conjugated benzenethiol. Graduate student Jia Chen, working at Yale
author_names: Ron Dagani
title: CARBON BASED ELECTRONICS
year: 1999