Query: klfreas56 11 w

Candidate papers:

abstract: Abstract We report results of design and optimization of high average output power picosecond and nanosecond laser operating at 1342 nm wavelength. Developed for selective micromachining, this DPSS laser is comprised of master oscillator, regenerative amplifier and output pulse control module. Passively mode locked by means of semiconductor saturable absorber mirror and pumped with 808 nm wavelength Nd:YVO 4 master oscillator emits 12.5 ps pulses at repetition rate of 55 MHz with average output power of ~100 mW. The four pass confocal delay line forms a longest part of the oscillator cavity in order to suppress thermo mechanical misalignment. Picked from the train seed pulses were injected to the cavity of regenerative amplifier based on composite Nd:YVO 4 crystal with diffusion bonded segments of multiple Nd doping concentration end pumped at 880 nm wavelength. Laser produces pulses of ~13 ps duration at 300 kHz repetition rate with average output power of 11 W and nearly diffraction limited beam quality of M 2 ~1.03. Attained high peak power ~2.8 MW facilitates conversion to the 2nd, 3rd and 6th harmonics at 671 nm, 447 nm and 224 nm wavelengths with 80% 50% and 15% efficiency respectively. Without seeding the regenerative amplifier transforms to electro optically cavity dumped Q switched laser providing 10 ns output pulses at high repetition rates with beam propagation factor of M 2 ~1.06.
author_names: Aleksej M Rodin

M Ya Grishin

Andrejus Michailovas
title: Picosecond laser with 11 W output power at 1342 nm based on composite multiple doping level Nd:YVO4 crystal
year: 2016

abstract: We report recent progress on GaN on diamond high electron mobility transistors (HEMTs) fabricated using a low temperature device transfer process. The devices were first fabricated on a GaN on SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high thermal conductivity diamond substrate at low temperature. The resulting $12 \times 50~\mu \text{m} GaN on diamond HEMTs demonstrated the state of the art electrical characteristics, including a maximum drain current density of 1.2 A/mm and a peak transconductance of 390 mS/mm. CW load pull measurements at 10 GHz yielded an RF output power density of 11 W/mm with 51% associated power added efficiency. Device measurements show that the GaN on diamond devices maintained slightly lower channel temperatures than their GaN on SiC counterparts while delivering 3.6 times higher RF power within the same active area. These results demonstrate that the GaN device transfer process is capable of preserving intrinsic GaN on SiC transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates.
author_names: Pane Chane Chao

Kenneth K Chu

Carlton T Creamer

Jose A Diaz

Thomas Yurovchak

Michael S Shur

Raymond L Kallaher

Craig D McGray

G D Via

J D Blevins
title: Low Temperature Bonded GaN on Diamond HEMTs With 11 W/mm Output Power at 10 GHz
venue: IEEE Transactions on Electron Devices
year: 2015

abstract: A wirelessly powered 11 mW transceiver for implantable sensors has been designed and demonstrated through 35 mm of porcine heart tissue. The prototype occupies 1 mm x 1 mm in 65nm CMOS with an external receive antenna. The IC consists of a rectifier, regulator, demodulator, modulator, controller, and sensor interface. The forward link transfers power and data on a 1.32 GHz carrier using low depth ASK modulation that minimizes impact on power delivery and achieves from 4 to 20 Mbps with 0.3 pJ/bit at 4 Mbps. The backscattering link modulates the antenna impedance with a configurable load for operation in diverse biological environments and achieves 2 Mbps at 0.7 pJ/bit. The device supports TDMA, allowing for simultaneous operation of multiple sensors.
author_names: Anatoly Yakovlev

Ji Hoon Jang

Daniel Pivonka
title: A 11mW Sub pJ/bit reconfigurable transceiver for mm sized wireless implants
venue: Proceedings of the IEEE 2013 Custom Integrated Circuits Conference
year: 2013

abstract: We present a narrow linewidth continuous laser source with over 11 W output power at 780 nm, based on single pass frequency doubling of an amplified 1560 nm fibre laser with 36% efficiency. This source offers a combination of high power, simplicity, mode quality and stability. Without any active stabilization, the linewidth is measured to be below 10 kHz. The fibre seed is tunable over 60 GHz, which allows access to the D2 transitions in 87Rb and 85Rb, providing a viable high power source for laser cooling as well as for large momentum transfer beamsplitters in atom interferometry. Sources of this type will pave the way for a new generation of high flux, high duty cycle degenerate quantum gas experiments.
author_names: Sharmila S Sane

Shayne Bennetts

John E Debs

Carlos C N Kuhn

Gordon D McDonald

Paul A Altin

John D Close

Nicholas P Robins
title: 11 W narrow linewidth laser source at 780 nm for laser cooling and manipulation of Rubidium.
venue: Optics express
year: 2012

abstract: A wirelessly powered 11 mW transceiver for implantable sensors has been designed and demonstrated through 35 mm of porcine heart tissue. The prototype occupies 1 mm x 1 mm in 65nm CMOS with an external receive antenna. The IC consists of a rectifier, regulator, demodulator, modulator, controller, and sensor interface. The forward link transfers power and data on a 1.32 GHz carrier using low depth ASK modulation that minimizes impact on power delivery and achieves from 4 to 20 Mbps with 0.3 pJ/bit at 4 Mbps. The backscattering link modulates the antenna impedance with a configurable load for operation in diverse biological environments and achieves 2 Mbps at 0.7 pJ/bit. The device supports TDMA, allowing for simultaneous operation of multiple sensors.
author_names: Anatoly Yakovlev

Ji Hoon Jang

Daniel Pivonka

Ada S Y Poon
title: A 11mW Sub pJ/bit reconfigurable transceiver for mm sized wireless implants
venue: CICC
year: 2013

abstract: We report on a high power polycrystalline Er:YAG ceramic laser in band pumped by a cladding pumped Er, Yb fiber laser wavelength locked at 1532 nm with a volume Bragg grating. Using 1.0 at Er3+ doped ceramic as the gain medium and an output coupler of 10% transmission, the laser had a threshold pump power of ~1.5 W and generated 11 W of continuous wave output at 1645 nm for 23.3 W of incident pump power at 1532 nm, corresponding to a slope efficiency with respect to incident pump power of 51%
author_names: X F Yang

Deyuan Shen

Tingjie Zhao

Hao Chen

Jianmin Zhou

Jianguo Li

Huamin Kou

Yu-bai Pan
title: In band pumped Er:YAG ceramic laser with 11 W of output power at 1645 nm
year: 2011

abstract: This paper presents the highest average power passively Q switched Nd:vanadate laser, to the best of our knowledge. A maximum average output power greater than 11 W was demonstrated using a Nd:YVO4 bounce geometry laser operating at 1064 nm in TEM00 mode, with a spatially stigmatic design. Pulse energies greater than 58 uJ and peak powers in excess of 1.9 kW were obtained; the maximum repetition rate recorded was 190 kHz, close to the upper limit achievable with Cr4+:YAG saturable absorbers.
author_names: Gabrielle M Thomas

Michael J Damzen
title: Passively Q switched Nd:YVO4 laser with greater than 11 W average power.
venue: Optics express
year: 2011

abstract: A fully integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16mm standard CMOS technology. It consists of a top metal finger structure capacitor covered with a humidity sensitive layer, combined with a micro power flexible sensor interface based on a second order incremental delta sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13 bits capacitance to digital conversion while consuming only 5.85 mA from 1.8 V supply. In combination with the co integrated sensor capacitor, it thus provides a humidity to digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive sensor interfaces with comparable performance.
author_names: Zhichao Tan

Roel Daamen

Aurelie Humbert

Kamran Souri

Youngcheol Chae

Youri Ponomarev

Michiel A P Pertijs
title: A 1.8V 11mW CMOS smart humidity sensor for RFID sensing applications
venue: IEEE Asian Solid State Circuits Conference 2011
year: 2011

abstract: We report power scaling experiments of a GaInNAs/GaAs based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 degC we obtained 11 W of output power. For efficient thermal management we used a water cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
author_names: Ville-Markus Korpijarvi

Tomi Leinonen

Janne Puustinen

Antti Harkonen

Mircea D Guina
title: 11 W single gain chip dilute nitride disk laser emitting around 1180 nm.
venue: Optics express
year: 2010

abstract: High power operation of a cladding pumped Tm doped broadband superfluorescent fiber source in the two micron wavelength regime is described. Predominately single ended operation was achieved using a simple all fiber geometry without the use of a high reflectivity mirror or fiber Bragg gratings. The source produced >11 W of single ended amplified spontaneous emission output spanning the wavelength range from approximately 1930 nm to 1988 nm for a launched diode pump power of approximately 40 W at approximately 790 nm, corresponding to a slope efficiency of 38% with respect to launched pump power. The wavelength spectrum of the superfluorescent source spanned the range from approximately 1650 to 2100 nm with a bandwidth (FWHM) of 100 nm for output power levels of 20 mW.
author_names: Deyuan Shen

Lee Pearson

P Wang

Jayanta Kumar Sahu

W Andrew Clarkson
title: Broadband Tm doped superfluorescent fiber source with 11 W single ended output power.
venue: Optics express
year: 2008