Query: design rules for quantum imaging devices

Candidate papers:

abstract: We continue our previous program1 where we introduced a set of quantum based design rules directed at quantum engineers who design single photon quantum communications and quantum imaging devices. Here, we report on experimental progress using SPAD (single photon avalanche diode) arrays of our design and fabricated in CMOS (complementary metal oxide semiconductor) technology. Emerging high resolution imaging techniques based on SPAD arrays have proven useful in a variety of disciplines including bio fluorescence microscopy and 3D vision systems. They have also been particularly successful for intra chip optical communications implemented entirely in CMOS technology. More importantly for our purposes, a very low dark count allows SPADs to detect rare photon events with a high dynamic range and high signal to noise ratio. Our CMOS SPADs support multi channel detection of photon arrivals with picosecond accuracy, several million times per second, due to a very short detection cycle. The tiny chip area means they are suitable for highly miniaturized quantum imaging devices and that is how we employ them in this paper. Our quantum path integral analysis of the Young Afshar Wheeler interferometer showed that Bohr's complementarity principle was not violated due the previously overlooked effect of photon bifurcation within the lens a phenomenon consistent with our quantum design rules which accounts for the loss of which path information in the presence of interference. In this paper, we report on our progress toward the construction of quantitative design rules as well as some proposed tests for quantum imaging devices using entangled photon sources with our SPAD imager.
author_names: Edoardo Charbon

Neil J Gunther

Dmitri L Boiko

Giordano B Beretta
title: Design rules for quantum imaging devices: experimental progress using CMOS single photon detectors
venue: SPIE Optics Photonics
year: 2006

abstract: A common syndrome in much of the current quantum optics and quantum computing literature is the casual switching between classical concepts (e.g. geometric rays, electromagnetic waves) and quantum concepts (e.g. state vectors, projection operators) Such ambiguous language can confuse designers not well versed in the deeper subtleties of quantum mechanics, or worse, it can lead to a flawed analysis of new designs for quantum devices. To validate that a quantum device can be constructed with the expected characteristics and that its quantum effects are correctly interpreted, a set of unambiguous design rules would be useful. In this paper we enumerate such a set of easily applied quantum rules in the hope that they might facilitate clearer communication between researchers and system developers in the field. In part, we are motivated by recently reported interferometer results that have not only led to flawed claims about disproving fundamental quantum principles, but have elicited equally flawed counter aruments from supposedly knowledgeable respondents. After one hundred years of testing Einstein's photon, it is alarming that such widespread confusion still persists. Our proposed quantum design rules are presented in a practical diagrammatic style, demonstrating their effectiveness by analyzing several interferometers that have appeared in the recent literature. Application to other quantum devices e.g. quantum ghost imaging, are also discussed. We stress that these rules are entirely quantum in prescription, being particularly appropriate for single photon devices. Classical optics concepts e.g. refractive index, are not required since they are subsumed by our quantum rules.
author_names: Neil J Gunther

Giordano B Beretta
title: Towards practical design rules for quantum communications and quantum imaging devices
venue: SPIE Optics Photonics
year: 2005

abstract: e2v technologies has developed "Hi Rho" devices manufactured on very high resistivity silicon. Special design features have been included that enable extremely high gate to substrate potentials to be applied without significant current leakage between back and front substrate connections. The approach taken allows the usual design rules for low noise output amplifier circuitry to be followed. Thus low noise devices very sensitive to red and near infrared wavelengths can be manufactured. This paper reports on the detailed characterisation of the large format "Hi Rho" sensor designed for astronomical applications and extends the data previously reported to include detailed assessment of the CTE, spatial resolution, dark signal and cosmetic quality. The influence of the base material has also been investigated with devices manufactured on silicon from two different manufacturers. Measurements of the quantum efficiency from devices utilising a newly developed antireflection coating process are presented.
author_names: Mark Stanford Robbins

Pritesh Mistry

Paul R Jorden
title: Detailed characterisation of a new large area CCD manufactured on high resistivity silicon
venue: Electronic Imaging
year: 2011

abstract: We demonstrate quantum imaging based on induced coherence without induced emission in a compact single crystal setup. Our first results will stimulate further work towards extreme light imaging devices for life science.
author_names: Marta Gilaberte Basset

Josue R Leon Torres

Markus Grafe
title: Compact Quantum Imaging Based on Induced Coherence
venue: 2019 Conference on Lasers and Electro Optics Europe European Quantum Electronics Conference (CLEO/Europe EQEC)
year: 2019

abstract: As a promising alternative to CMOS technology, QCA circuit design has been extensively studied in recent years. However, although a concrete set of design rules exist for integrated circuit design, little attention has been paid to the design rules necessary for efficient QCA circuit design. This paper compiles a set of important QCA design rules which include layout design rules, timing rules and some special rules for QCA technology to ensure QCA circuits function correctly and reliably. These rules will promote the development of practical and efficient QCA systems. A GF(2m) multiplier design is proposed as a case study to illustrate these design rules.
author_names: Weiqiang Liu

Liang Lu

Maire O'Neill

Earl E Swartzlander
title: Design rules for Quantum dot Cellular Automata
venue: 2011 IEEE International Symposium of Circuits and Systems (ISCAS)
year: 2011

abstract: We demonstrate diamond based quantum imaging of the current flow in graphene structures with submicrometer resolution. Since its first discovery in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed matter physics as well as offering tremendous opportunities for future electronic and sensing devices. Typically, electronic transport in graphene has been investigated via resistivity measurements; however, these measurements are generally blind to spatial information critical to observing and studying landmark transport phenomena in real space and in realistic imperfect devices. We apply quantum imaging to the problem and demonstrate noninvasive, high resolution imaging of current flow in monolayer graphene structures. Our method uses an engineered array of near surface, atomic sized quantum sensors in diamond to map the vector magnetic field and reconstruct the vector current density over graphene geometries of varying complexity, from monoribbons to junctions, with spatial resolution at the diffraction limit and a projected sensitivity to currents as small as 1 mA. The measured current maps reveal strong spatial variations corresponding to physical defects at the submicrometer scale. The demonstrated method opens up an important new avenue to investigate fundamental electronic and spin transport in graphene structures and devices and, more generally, in emerging two dimensional materials and thin film systems.
author_names: Jean-Philippe Tetienne

Nikolai Dontschuk

David A Broadway

Alastair D Stacey

David A Simpson

Lloyd C L Hollenberg
title: Quantum imaging of current flow in graphene
venue: Science Advances
year: 2017

abstract: In this paper, we combine multiphysics simulation methods to assemble a comprehensive design methodology for silicon qubit devices. Key device parameters are summarized by modeling device electrostatics, stress, micro magnetics, band structure and spin dynamics. Based on the models, we infer that highly confined single electron qubits in quantum dots, with large orbital energy separations, can be induced in Si MOS structures with thin (tOX 20 nm) gate oxides. We further advocate that poly silicon gate material, in conjunction with small barrier gate widths (b 30 nm) will reduce the impact of strain on qubit readout and two qubit gate operations. We optimized a micromagnet design to provide fast single qubit gate times 100 ns) with minimal dephasing field gradients. Finally, we estimate that the exchange coupling between qubits is tunable by over 4 orders of magnitude, for two qubit operations.
author_names: Fahd A Mohiyaddin

B T Chan

Tsvetan Ivanov

Alessio Spessot

Philippe Matagne

J Lee

Bogdan Govoreanu

I P Raduimec

George Simion

N I Dumoulin Stuyck

R Li

Florin Ciubotaru

Geert Eneman

Fabian M Bufler

S Kubicek

J Jussot
title: Multiphysics Simulation Design of Silicon Quantum Dot Qubit Devices
venue: 2019 IEEE International Electron Devices Meeting (IEDM)
year: 2019

abstract: Quantum computation is currently moving from an academic idea to a practical reality. The recent past has seen tremendous progress in the physical implementation of corresponding quantum computers also involving big players such as IBM, Google, Intel, Rigetti, Microsoft, and Alibaba. These devices promise substantial speedups over conventional computers for applications like quantum chemistry, optimization, machine learning, cryptography, quantum simulation, and systems of linear equations. The Computer Aided Design and Verification (jointly referred as CAD) community needs to be ready for this revolutionizing new technology. While research on automatic design methods for quantum computers is currently underway, there is still far too little coordination between the CAD community and the quantum computation community. Consequently, many CAD approaches proposed in the past have either addressed the wrong problems or failed to reach the end users. In this summary paper, we provide a glimpse into both sides. To this end, we review and discuss selected accomplishments from the CAD domain as well as open challenges within the quantum domain. These examples showcase the recent state of the art but also outline the remaining work left to be done in both communities.
author_names: Robert Wille

Austin G Fowler

Yehuda Naveh
title: Computer Aided Design for Quantum Computation
venue: 2018 IEEE/ACM International Conference on Computer Aided Design (ICCAD)
year: 2018

abstract: Tunneling field effect transistors (TFETs) based on 2 D materials are promising steep sub threshold swing devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2 D TFETs: 1) electrical and 2) chemical doping. In this paper, design guidelines for both electrically and chemically doped 2 D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2 D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness are studied. Later on, these performance boosters are analyzed within a novel figure of merit plot (i.e. constant ON current plot)
author_names: Hesameddin Ilatikhameneh

Gerhard Klimeck

Joerg Appenzeller

Rajib Rahman
title: Design Rules for High Performance Tunnel Transistors From 2 D Materials
venue: IEEE Journal of the Electron Devices Society
year: 2016

abstract: Editor's note: As an emerging technology, quantum computing brings unique promises in creating a fundamentally different paradigm of information processing. This article reviews introductory concepts and building blocks quantum logic gates and memory, i.e. qubits, for quantum computing and depicts the challenges as well as prospects associated with design, test, and fabrication of quantum devices. Swarup Bhunia, Case Western Reserve University
author_names: Travis S Humble

Himanshu Thapliyal

Edgard Munoz-Coreas

Fahd A Mohiyaddin

Ryan S Bennink
title: Quantum Computing Circuits and Devices
venue: IEEE Design Test
year: 2019