Query: Semiconductor devices fabricated from actinide oxides

Candidate papers:

abstract: Abstract Recent investigations of the semiconductive properties of urania indicate that the oxides of uranium may be useful in the fabrication of certain active electronic devices. UO 2 and U 3 O 8 have been characterized as to their photo optical properties and active devices have been fabricated from urania.
author_names: Thomas T Meek

Bolko von Roedern
title: Semiconductor devices fabricated from actinide oxides
year: 2008

abstract: Abstract The electrical properties of the Cu/n InP and Al/n InP Schottky barrier diodes (SBDs) with and without the interfacial oxide layer have been investigated by using current voltage I V measurements. The oxide layer on chemically cleaned indium phosphide (InP) surface has been obtained by exposure to water vapor at 1 ml/min at 200 degC before metal evaporation. The chemical composition of surface oxides grown on the InP is investigated using X ray photoelectron spectroscopy (XPS) Phosphorus is present as In(PO 3 3 InPO 4 P 2 O 5 and P 4 O 10 The values of 0.437 0.007 and 0.438 0.003 eV for the barrier height of the reference Cu/n InP and Al/n InP SBDs were obtained, respectively. Furthermore, the values of 0.700 0.030 and 0.517 0.023 eV for the barrier height of the oxidized Cu/n InP and Al/n InP SBD were obtained, respectively. The transport properties of the metal semiconductor contacts have been observed to be significantly affected by the presence of the interfacial oxide layer. Devices built on the oxidized surfaces show improved characteristics compared with those built on chemically cleaned surfaces. The chemical reactivity of the metal with oxide and n InP is important to the formation of the Schottky barriers. The reactive metal Al gave a low barrier height due to the reduction of oxide and reaction with InP. The transmission coefficients for the oxidized Cu/n InP and Al/n InP are equal to 2.23 x 10 5 and 4.60 x 10 2 respectively.
author_names: Hidayet Cetin

E Ayyildiz
title: The electrical properties of metal oxide semiconductor devices fabricated on the chemically etched n InP substrate
year: 2007

abstract: Electronic memory cells are of critical importance in modern day computing devices, including emerging technology sectors such as large area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low temperature and large area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios $10^{4} and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large area electronics as well as in electronics for harsh environments, e.g. space, high/low temperature, magnetic influences, radiation, vibration, and pressure.
author_names: James Alexander Semple

Gwenhivir Wyatt-Moon

Dimitra G Georgiadou

Martyn A McLachlan

Thomas D Anthopoulos
title: Semiconductor Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography
venue: IEEE Transactions on Electron Devices
year: 2017

abstract: Device quality crystallographically oriented epitaxial (100)Ge and (110)Ge were grown on GaAs substrates using a large bandgap AlAs buffer. Electrical characteristics of p type metal oxide semiconductor (pMOS) capacitors, fabricated from the aforementioned material stacks, are presented for the first time. High resolution cross sectional transmission electron microscopy analysis demonstrated atomically abrupt heterointerfaces between Al<sub>2</sub>O<sub>3</sub>/Ge as well as Ge/AlAs for both (100) and (110) orientations. Various process conditions were implemented during MOS capacitor fabrication to study their impact on the Al<sub>2</sub>O<sub>3</sub>/Ge interface. The fabricated pMOS devices demonstrated excellent electrical characteristics with efficient modulation of the Fermi level from midgap to the conduction band edge, corresponding to a minimum <inline formula> <tex math notation="LaTeX"{D}_{\text {it} /tex math>/inline formula> value of <inline formula> <tex math notation="LaTeX"{1.2} \times {10}{11} /tex math>/inline formula> cm<inline formula> <tex math notation="LaTeX" 2}\cdot /tex math>/inline formula>ev<sup> 1</sup> on (100)Ge, indicative of a high quality oxide/Ge heterointerface, and an effective electrical passivation of the Ge surface. Postdeposition annealing under O<sub>2</sub> was found to be less effective at reducing oxide trap density <inline formula> <tex math notation="LaTeX"{N}_{\text {OT} /tex math>/inline formula> as compared to forming gas or O<sub>2</sub> postmetallization anneals (PMA) indicating that metal induced bandgap states at the gate metal/dielectric interface have a notable impact on Ge pMOS <inline formula> <tex math notation="LaTeX"{N}_{\text {OT} /tex math>/inline formula> On the other hand, a tradeoff must be made between <inline formula> <tex math notation="LaTeX"{N}_{\text {OT} /tex math>/inline formula> and the equivalent oxide thickness when performing PMA under O<sub>2</sub> or forming gas ambient.
author_names: Peter D Nguyen

Michael B Clavel

Jheng-Sin Liu

Mantu K Hudait
title: Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal Oxide Semiconductor Devices on AlAs/GaAs
venue: IEEE Transactions on Electron Devices
year: 2017

abstract: Organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in large area and flexible sensor devices. In fact, organic based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near infrared with good photogeneration yield and low temperature processability over large areas and on any substrate. Moreover, their electronic properties can be easily tuned to optimize, charges transport depending on the targeted application in the field of imaging, tactile or biomedical sensing. We made curved surface sensor array by thermal molding of planer device array on thin plastic film.
author_names: Kazuhiro Kudo

Masatoshi Sakai
title: Flexible Information and Sensing Devices Fabricated by Printing Process
venue: 2019 26th International Workshop on Active Matrix Flatpanel Displays and Devices (AM FPD)
year: 2019

abstract: The fabrication of both n and p type Si MOS capacitors using high k dielectric as insulator deposited by atomic layer deposition technique is presented. The interface obtained between the high k dielectric and the semiconductor substrate, critical for stability and feasibility of the experimental devices, is analyzed using both numerical calculation of the ideal capacitance voltage (C V) characteristics of the MOS capacitors and experimental data obtained at high frequency (500 kHz) Accordingly, the effective oxide charge is determined based on the deviation of the flat band voltage from the ideal value, the smallest value (7.3 x 1010 cm 2) being obtained for the HfO2/n Si structure. Using the Terman method, the interface traps density has been calculated, establishing that the HfO2/p type sample present the best interface on the entire range of energy level in Si band gap. Finally, the stability of the fabricated Si MOS capacitors is monitored by cyclically high frequency C V measurements with increased starting voltage after each recorded C V characteristic.
author_names: Razvan Pascu

Pericle Varasteanu

Mihaela Kusko

Cosmin Romanitan

Florin Nastase
title: Monitoring the stability of the fabricated high k Si MOS capacitors and investigation of the insulator/semiconductor interface
venue: 2017 International Semiconductor Conference (CAS)
year: 2017

abstract: Micro Photoluminescence Imaging was used to identify the impact of thermal steps on dislocation density associated with Deep Trench Isolation. Previous work showed gate oxide failure due to slip associated with dislocations from the deep trenches. Micro Photoluminescence Imaging demonstrated capability to observe dislocation generation caused by thermally induced stress during processing of Deep Trench Isolation (DTI) wafers.
author_names: Bruce Greenwood

Jeff P Gambino

Y Watanabe

Lubek Jastrzebski

Gyorgy Nadudvari

D'avid Cseh

Laszlo Roszol

Gyorgy Molnar

Imre Lajtos
title: Micro photoluminescence imaging of dislocation generation in 0.18mm power semiconductor devices with deep trenches
venue: 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
year: 2018

abstract: GaAs metal oxide semiconductor capacitors with NdTaON as gate dielectric and NdAlON, NdON or AlON as interfacial passivation layer (IPL) are fabricated, and their interfacial and electrical properties are compared with their counterpart without IPL. Experimental results show that owing to the suppressed hygroscopicity of NdON by Al incorporation, best improvements in electrical properties and reliability are achieved for the sample with NdAlON IPL (low interface state density <inline formula> <tex math notation="LaTeX"$8 \times 10^{11} /tex math>/inline formula> cm<sup> 2</sup>/eV) small flatband voltage (0.72 V) negligible hysteresis (43 mV) small frequency dispersion, and low gate leakage current density <inline formula> <tex math notation="LaTeX"$2.56 \times 10^ 6} /tex math>/inline formula> A/cm<sup>2</sup> at V<sub>fb</sub> 1 V) These should be attributed to suppressed growth of unstable Ga and As oxides on the GaAs surface and reduced in diffusion of elements from the gate dielectric to the GaAs surface by the NdAlON IPL during gate dielectric annealing.
author_names: L N Liu

H W Choi

J P Xu

W M Tang

Pui To Lai
title: GaAs Metal Oxide Semiconductor Capacitor With Nd Based High k Oxynitrides as Gate Dielectric and Passivation Layer
venue: IEEE Transactions on Electron Devices
year: 2018

abstract: Recently, p type metal oxide semiconductors have attracted considerable interests for the applications in optoelectronic devices and low power complementary metal oxide semiconductor circuits. In this report, ternary p type CuAl<sub>x</sub>O<sub>y</sub> semiconductor thin films were fabricated by sol gel method and integrated as channel layers in thin film transistors (TFTs) The electrical performances of CuAl<sub>x</sub>O<sub>y</sub> TFTs, together with the characteristics of CuAl<sub>x</sub>O<sub>y</sub> thin films (e.g. crystalline phases, chemical compositions, surface morphology, and optical transmittances) were systematically studied at various annealing temperatures <inline formula> <tex math notation="LaTeX"{T}_{a} /tex math>/inline formula> The phase pure CuAlO<sub>2</sub> thin films were obtained at <inline formula> <tex math notation="LaTeX"{T}_{a} /tex math>/inline formula> above 800deg C in N<sub>2</sub> atmosphere. CuAlO<sub>2</sub> TFTs annealed at 900 deg C based on high k Al<sub>2</sub>O<sub>3</sub> exhibited optimized electrical performance, including a hole mobility of 1.36 cm<sub>2</sub>/Vs and on/off current ratio of <inline formula> <tex math notation="LaTeX"\sim 1 \times 10^\textsf {5} /tex math>/inline formula> This paper not only demonstrates the successful fabrication of high quality p type CuAlO<sub>2</sub> semiconductor thin film and electronic devices by sol gel process but also provides guidelines for related ternary p type oxide semiconductor material and device performance improvements.
author_names: Chunfeng Wang

Haotian Zhu

You Meng

Shengbin Nie

Yuna Zhao

Byoung Chul Shin

Elvira Fortunato

Rodrigo Martins

Fukai Shan

Guoxia Liu
title: Sol Gel Processed p Type CuAlO2 Semiconductor Thin Films and the Integration in Transistors
venue: IEEE Transactions on Electron Devices
year: 2019

abstract: New platinum (Pt)/nickel oxide (NiO)/GaN based metal oxide semiconductor (MOS) diode type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN based MOS diode shows good ammonia sensing performance at relatively high temperatures <inline formula> <tex math notation="LaTeX"\ge 423$ /tex math>/inline formula> K) A very high sensing response of 244.2 under 1000 ppm NH<sub>3</sub>/air gas and a low detecting level of 2 ppm NH<sub>3</sub>/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce <italic>data redundancy</italic> by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.
author_names: I-Ping Liu

Ching-Hong Chang

Yen-Ming Huang

Kun-Wei Lin
title: On the Ammonia Sensing Performance and Transmission Approach of a Platinum/Nickel Oxide/GaN Based Metal Oxide Semiconductor Diode
venue: IEEE Journal of the Electron Devices Society
year: 2019