Query:  electrical conductivity of Cu2O

Candidate papers:

abstract: Cuprous oxide (Cu2O) is a promising earth abundant semiconductor for photovoltaic applications. Developing an understanding of the p type conduction mechanism is vital to optimize the material. We have used a reactive magnetron sputtering system to fabricate Cu2O thin films. The bandgap, refractive index, mobility, density of hole, and electrical conductivity in the films have also been investigated. Our work shows that the films fabricated under nitrogen rich condition exhibit wide bandgaps and low electrical conductivities while the films deposited under oxygen rich condition have narrow bandgaps and high electrical conductivities. The results from the density functional theory are introduced to explain the gas dependence of the bandgap. A developed theoretical model based on Fermi Dirac statistics shows that the high electrical conductivities originate from the acceptor levels located below Feimi level in the film.
author_names: Liangmin Zhang

Lyndsey B McMillon

Jeremiah S Mcnatt
title: Gas dependent bandgap and electrical conductivity of Cu2O thin films
year: 2013

abstract: Hall effect and electrical conductivity measurements were performed on Cu2O single crystals both before and after heating the samples in vacuo at temperatures ranging from 200 degC to 800 degC. Both th.
author_names: Emery Fortin

Frank L Weichman
title: HALL EFFECT AND ELECTRICAL CONDUCTIVITY OF Cu2O MONOCRYSTALS
year: 1966

abstract: Dy Cu intermediate alloys have shown substantial potential in the field of magnetostrictive and magnetic refrigerant materials. Therefore, this study focused on investigating the electrical conductivity of molten salt systems for the preparation of Dy Cu alloys and on optimizing the corresponding operating parameters. The electrical conductivity of molten LiF DyF3 Dy2O3 Cu2O systems was measured from 910 to 1030degC using the continuously varying cell constant method. The dependencies of the LiF DyF3 Dy2O3 Cu2O system conductivity on the melt composition and temperature were examined herein. The optimal operating conditions for Dy Cu alloy production were determined via analyses of the electrical conductivity and activation energies for conductance, which were calculated using the Arrhenius equation. The conductivity of the molten system regularly increases with increasing temperature and decreases with increasing concentration of Dy2O3 or Cu2O or both. The activation energy Ek of the LiF DyF3 Dy2O3 and LiF DyF3 Cu2O molten salt systems increases with increasing Dy2O3 or Cu2O content. The regression functions of conductance as a function of temperature (t) and the addition of Dy2O3 (W(Dy2O3) and Cu2O (W(Cu2O) can be expressed as k 2.08435 0.0068t 0.18929W(Dy2O3) 0.07918W(Cu2O) The optimal electrolysis conditions for preparing the Dy Cu alloy in LiF DyF3 Dy2O3 Cu2O molten salt are determined to be 2.0wt% W(Dy2O3) W(Cu2O) 3.0wt% and W(Dy2O3) W(Cu2O) 1:2 at 970 to 1000 degC.
author_names: Shu-mei Chen

Chunfa Liao

Jue-yuan Lin

Bo-qing Cai

Xu Dong Wang

Yun-fen Jiao
title: Electrical conductivity of molten LiF DyF3 Dy2O3 Cu2O system for Dy Cu intermediate alloy production
venue: International Journal of Minerals, Metallurgy and Materials
year: 2019

abstract: The acknowledgements of this article unfortunately contained a mistake. The grant number of the National Natural Science Foundation of China was incorrect.
author_names: Shu-mei Chen

Chunfa Liao

Jue-yuan Lin

Bo-qing Cai

Xu Wang

Yun-fen Jiao
title: Erratum to: Electrical conductivity of molten LiF DyF3 Dy2O3 Cu2O system for Dy Cu intermediate alloy production
venue: International Journal of Minerals, Metallurgy and Materials
year: 2020

abstract: This work aims at investigating the conversion of Cu2O/Cu nanoparticles, prepared by green synthesis using artichoke extract, with ascorbic acid (AA) in one bath process: a totally green method for production of pure Cu particles. Different pH values of the solution were studied to assess the conversion to Cu phase particles. It was found that by using the optimum synthesis conditions for the production of Cu2O/Cu nanoparticles and adding at the end of the synthesis AA, the conversion of Cu2O phase to pure Cu phase was possible when the pH of the solution was 8 or 10, but not when it was 12. The size of particles increased from nano to micron sized after adding AA and multi shaped particles with spherical, triangular, cubical and rod like shapes were formed, depending upon the pH of the synthesis solution. The electrical resistivity of the obtained pure Cu microparticles was studied after low temperature sintering at different times and after preparing compact powder discs. After sintering for 30 min at 180 degC, discs showed resistivity of 2.9 x 10 3 Ocm and after sintering for 60 min at 180 degC the resistivity lowered to 5.1 x 10 4 Ocm. It can be concluded that the low resistivity of powder discs mainly depended on the size of Cu particles and sintering time, when using a fixed sintering temperature. The present synthesis of pure Cu phase microparticles is simple, convenient, environmentally friendly, cost effective, it does not use inert gases, it is performed in aqueous media and the produced Cu particles are suitable for low electrical resistivity applications.
author_names: Sandra Sampaio

Julio C Viana
title: Green synthesis of Cu2O/Cu nanoparticles and conversion to Cu microparticles in one bath reaction method for improved electrical conductivity
year: 2021

abstract: It is interesting to examine facet dependent electrical properties of single Cu2O crystals, because such study greatly advances our understanding of various facet effects exhibited by semiconductors. We show a Cu2O octahedron is highly conductive, a cube is moderately conductive, and a rhombic dodecahedron is nonconductive. The conductivity differences are ascribed to the presence of a thin surface layer having different degrees of band bending. When electrical connection was made on two different facets of a rhombicuboctahedron, a diode like response was obtained, demonstrating the potential of using single polyhedral nanocrystals as functional electronic components. Density of state (DOS) plots for three layers of Cu2O (111) (100) and (110) planes show respective metallic, semimetal, and semiconducting band structures. By examining DOS plots for varying number of planes, the surface layer thicknesses responsible for the facet dependent electrical properties of Cu2O crystals have been determined to be below 1.5 nm for these facets.
author_names: Chih-Shan Tan

S C Hsu

Wei-Hong Ke

Lih-Juann Chen

Michael H Huang
title: Facet dependent electrical conductivity properties of Cu2O crystals.
venue: Nano letters
year: 2015

abstract: Temperature dependent Hall effect and resistivity measurements are performed on polycrystalline Cu2O:Sr thin films deposited on glass substrate by metal organic chemical vapor deposition. Their electrical properties are studied as a function of the strontium content, as determined by wavelength dispersive X ray spectrometry. These electrical transport measurements highlight a copper vacancy doping mechanism induced by strontium incorporation, leading to a large decrease of the resistivity as low as 1.2 O*cm and corresponding free carrier mobilities about 15 cm2*V 1*s 1 at room temperature. Moreover, in addition to the main copper vacancy acceptor level, found at EA1 278 21 meV above the top of the valence band, a coexisting shallower acceptor level with an ionization energy of EA2 133 15 meV occurs for a strontium content above 5% and is tentatively assigned to a large size impurity vacancy complex.
author_names: Stephane Brochen

Laurent Bergerot

Wilfried Favre

Joao Resende

Carmen Jimenez

Jean Luc Deschanvres

Vincent Consonni
title: Effect of Strontium Incorporation on the p Type Conductivity of Cu2O Thin Films Deposited by Metal Organic Chemical Vapor Deposition
year: 2016

abstract: Boron doped cuprous oxide (Cu2O:B) thin films were deposited on glass and silicon substrates via radio frequency (rf) magnetron co sputtering at room temperature using metallic copper and boron targets. The influence of B doping on the morphology of Cu2O was studied using X ray diffraction and spectrometric techniques. Optical transparency and bandgap of the doped films were improved compared to intrinsic Cu2O thin film. X ray photoelectron spectroscopy confirms that Cu is in 1 valance state even after doping. Electrical characteristics suggest enhanced p type conductivity and reduction in resistivity with boron doping, due to the increase in charge carriers. Cu2O:B/c Si heterojunction shows good rectifying 104) behavior, and the small Ev and high Ec obtained from the flat band diagram suggests its potential application as hole selective layer in c Si solar cell.
author_names: Manu Shaji

Kurias K Markose

K J Saji

M K Jayaraj
title: Investigation on the improved electrical and optical properties of trivalent boron doped Cu2O thin film and fabrication of Cu2O:B/c Si heterojunction diode
venue: Journal of Materials Science: Materials in Electronics
year: 2020

abstract: A series of conductivity measurements were made on single crystals of Cu2O from 20 to 840 degC to explain the various activation energies which appear at different temperatures and oxygen pressures.
author_names: Frank L Weichman

Radomir Kuzel
title: Influence of annealing on the electrical conductivity of single crystals of Cu2O
year: 1970

abstract: Abstract Sphere like Cu Cu2O nanoparticles on graphene nanoplatelets (Cu Cu2O@GNP) nanocomposites were prepared via the in situ decomposition of copper acetate and GNP at 500 degC in N2 flow. The thermal behavior of the copper acetate and GNP mixtures was monitored using thermogravimetric analysis (TGA) X ray diffraction (XRD) X ray photoelectron spectroscopy (XPS) field emission scanning electron microscopy (FE SEM) transmission electron microscopy (TEM) and N2 adsorption were used to characterize the obtained nanocomposites. The obtained results revealed that the nanocomposites are consisted of Cu Cu2O nanospheres distributed among the graphene nanoplatelets. The study on the thermal effect of cyclic conductivity was done on Cu Cu2O@GNP in the pure form, prepared in different copper loadings (5% 10% 20% and 30% The dc conductivity for 5% 10% 20% and 30% of Cu Cu2O@GNP composite was found 42.44 S cm 1, 44.053 S cm 1, 75.42 S cm 1 and 78.951 S cm 1, respectively measured by 4 in line probe dc electrical conductivity measuring technique. This shows the metallic behavior as it increasing with the temperature and highest ratio of metal have high conductivity.
author_names: Bahaa M Abu-Zied

Mahmoud Ali Hussein

Anish Khan

Abdullah M Asiri
title: Cu Cu2O@graphene nanoplatelets nanocomposites: Facile synthesis, characterization, and electrical conductivity properties
year: 2018