Query: P-type silicon ZnO

Candidate papers:

abstract: Hydrothermal method was successfully utilized to grow ZnO nanorods on p type silicon substrate. The highly dense grown ZnO nanorods are well aligned, and perpendicularly to substrate confirmed by scanning electron microscopy. The X ray diffraction analysis confirmed that the [002] orientation was the major growth direction of the ZnO nanorods. A shadow masks have used to fabricate Metal semiconductor metal (MSM) structure. Three arrays of Ag interdigitated electrodes were then deposited onto the ZnO nanorod/Si substrates. The current characteristics of [Ag/ZnO nanorod/Ag]/Si devices were investigated range of 2 to +2 V. The as fabricated devices showed a contrast ratio (i.e. the photocurrent/dark current) of 1.17 along with room temperature 0.115 mA/W responsivity at 365 nm and 2 V. A simulation analysis for the theoretical MSM structure has also been done in this work. A Visual TCAD was also used to simulate this device. A comparative study of experimentally and theoretically obtained results was also carried out and both results were found in good agreement of each other.
author_names: M Kumar

Shibu Singh

Pramod Kumar Tiwari

S H Park
title: SIMULATION AND FABRICATION OF Ag/ZnO NANORODS/Ag ULTRAVIOLET DETECTORS ON p TYPE SILICON
year: 2020

abstract: The results of the synthesis and characterization of self assembled ZnO nanoparticles (NP) embedded within a SiO2 matrix deposited on (111) p type silicon by reactive radio frequency sputtering are reported. Synthesis consists in a sequential deposit of SiO2/metallic Zn/SiO2/SiO2 layers, using argon and oxygen as the working atmosphere at a substrate temperature of 400degC. ZnO NP were nucleated at valleys of the first rough SiO2 layer by the action of the reactive atmosphere and Zn atoms coming from the sputtered target. Three different deposition times for the zinc interlayer were studied. Scanning electron microscopy shows that films have uniform topography and transmission electron microscopy indicates the presence of NP with sizes around 10 nm. The successful production of ZnO is corroborated by x ray photoemission spectroscopy studies. Secondary ion mass spectroscopy shows a spatial distribution of zinc depending on the thickness of the zinc interlayer, ZnO NP follow a similar distribution. Electrical transport studies have shown the formation of a rectifying structure between the layer and silicon substrate. Spectral response is observed with a wavelength distribution depending on the zinc interlayer thickness and probably due to the formation of ZnO NP of different sizes.
author_names: Mario Avila-Meza

O Zelaya-Angel

Salvador Gallardo

Jose Luis Fernandez-Munoz

D R Alfaro-Flores

Miguel Angel Melendez-Lira
title: Synthesis and Characterization of Self Assembled ZnO Nanoparticles Embedded Within a SiO2 Matrix Deposited on (111) p Type Silicon By Reactive RF Sputtering Using Metallic Zinc Target As Precursor
venue: Journal of Electronic Materials
year: 2018

abstract: Abstract In this work we discuss a method of preparation of a highly sensitive light detector based on ZnO nanorods. A photoresistor constructed by us is based on a heterojunction between high quality ZnO nanorods and high resistivity p type Si used as a substrate for nanorods' deposition. ZnO nanorods are grown by a modified version of a microwave assisted hydrothermal method which allows for growth of high quality ZnO nanorods in a few minutes. The obtained photoresistor responds to a wide spectral range of light starting from near infrared (IR) to ultraviolet (UV) Properties of the detector are evaluated. We propose the use of the detector as an optical switch.
author_names: Bartlomiej S Witkowski

Rafal Pietruszka

Sylwia Gieraltowska

L Wachnicki

Hanka Przybylinska

Marek Godlewski
title: Photoresistor based on ZnO nanorods grown on a p type silicon substrate
year: 2017

abstract: Al ZnO/(n)Si and Al ZnO/(p)Si heterojunction structures were fabricated by RF sputtering of Al ZnO thin film on Si substrates and their electrical and photoresponse properties were comparatively analyzed. The Al ZnO/(n)Si heterojunction exhibited excellent diode behavior with an equivalent barrier height of 0.72 eV and an rectification ratio of <inline formula> <tex math notation="LaTeX"$6.7 \times 10^{3} /tex math>/inline formula> at 0.5 V, while no rectifying behavior was observed for Al ZnO/(p)Si device. Illuminated I V analysis performed with different light intensities revealed excellent photoresponse properties and the strong dependence of the photocurrent on external bias for both Al ZnO/(n)Si and Al ZnO/(p)Si structures. The Al ZnO/(n)Si structure requires smaller reverse bias than Al ZnO/(p)Si for similar photoresponse. Based on dark I V, illuminated I V, and the energy band diagrams, photoresponse mechanisms were explained. In order to further understand the photoresponse mechanisms, quantum efficiency measurements were carried out, with applied external voltage bias. A general descriptive model was presented for the first time for the photogenerated current density in both Al ZnO/(n)Si and Al ZnO/(p)Si heterojunctions at different voltage bias.
author_names: Zhen Gao

Navid M S Jahed

Siva Sivoththaman
title: Biased Photoresponse Analysis of Al ZnO Heterojunctions with n and p Type Silicon
venue: IEEE Transactions on Electron Devices
year: 2017

abstract: Sol gel spin coating deposition method was used to deposits nanostructured ZnO on P type silicon. Zinc acetate, diethanolamine, and isopropyl were used as starting material, stabiliser and solvent respectively. Surface morphology was studied by field emission scanning electron microscopy (FESEM) It was found that nanostructured ZnO was distributed uniformly over the P type Silicon substrate. This was supported by atomic force microscopy (AFM) image which shows the all the surfaces are covered by nanoparticle of ZnO. X ray diffraction (XRD) was employed to analyse the structural and crystalline of nanostructured ZnO. Three peak (100) (002) and (101) correspond to nanostructed ZnO are appear. Temperature dependence I V characteristic was investigated in range of 25 K to 300 K by using close cycle cryostat and using helium as cooler agent. It is found that the resistance were decrease toward the higher temperature. The result shows that resistivity gradually decreased due to increases of temperature.
author_names: Kevin Alvin Eswar

F S Husairi

S A Mohammad

Aziz Azlinda

Mohamad Rusop

Syahrul Afzal Che Abdullah
title: Synthesis of spin coated nanostructured ZnO on P type silicon and Temperature dependence of I V characteristic
year: 2015

abstract: Abstract ZnO nanostructures have been synthesized on p type silicon substrates using a two step, spontaneous oxidation of Zn films method at room temperature. The samples both with and without a thin layer of gold in different positions have been spontaneously oxidized in a humid atmosphere for seven days to form nanosheets and ball cactus like nanostructures. Diverse morphologies of hierarchical ZnO nanostructures have been obtained by annealing the samples at 700 degC in a nitrogen atmosphere for 1 h. A growth mechanism has been proposed for the formation of different ZnO nanostructures. It was found that the band gap emission can be greatly improved and that the defect emission is suppressed to a noise level when a thin layer of Au was deposited between the Zn and the Si substrate. Moreover, our results show that the ZnO/p Si heterojunction exhibits good performance for visible spectrum detection.
author_names: Q Xu

Qijin Cheng

Zifeng Zhang

Rongdun Hong

Xiaping Chen

Zhengyun Wu

Fengyan Vancouver Zhang
title: Synthesis of ZnO nanostructures by spontaneous oxidation of Zn films on p type silicon substrates
year: 2014

abstract: Abstract In this paper, the growth of n type aluminum boron co doped ZnO (n AZB) on a p type silicon (p Si) substrate by sol gel method using spin coating technique is reported. The n AZB/p Si heterojunctions were annealed at different temperatures ranging from 400 to 800 degC. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 degC and increased to 3.30 eV at 800 degC probably due to the formation of Zn 2 SiO 4 at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n AZB/p Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 degC.
author_names: Vinod Kumar

Neetu Singh

Avinashi Kapoor

Odireleng Martin Ntwaeaborwa

Hendrik C Swart
title: Fabrication and characterization of n type aluminum boron co doped ZnO on p type silicon (n AZB/p Si) heterojunction diodes
year: 2013

abstract: Compared to the p n junction type device (Device A) with an n type ZnO nanowire (n ZnO)/p type silicon (p Si) hybrid structure, the newly designed device (Device B) with an n ZnO/reduced graphene oxide sheet (rGO)/p Si hybrid structure displays interesting electrical characteristics such as lower turn on voltage and better current symmetry. The addition of rGO between n ZnO and the p Si substrate enables tuning of the p n junctions into back to back Schottky junctions and lowering of the turn on voltages, implying great potential applications in electronic and optoelectronic devices. The electrical characteristics and operating mechanism of these two devices are fully discussed.
author_names: Zhiwen Liang

Xiang Cai

Shaozao Tan

Peihua Yang

Long Zhang

Xiang Yu

Keqiu Chen

Hanming Zhu

Pengyi Liu

Wenjie Mai
title: Fabrication of n type ZnO nanowire/graphene/p type silicon hybrid structures and electrical properties of heterojunctions.
venue: Physical chemistry chemical physics PCCP
year: 2012

abstract: P type silicon was used as a substrate of deposition of nanostructured ZnO by sol gel spin coating technique, while zinc acetate, diethanolamine, and isopropyl were used as starting material, stabilizer and solvent respectively. Surface morphology was studied by Field Emission Scanning Electron Microscopy (FESEM) It was found that nanostructured ZnO was distributed uniformly over the P type Silicon substrate. This was supported by atomic force microscopy (AFM) image which shows the all the surfaces are covered by nanoparticle of ZnO. X ray diffraction (XRD) was employed to analyse the structural and crystalline of nanostructured ZnO. Three peak (100) (002) and (101) correspond to nanostructed ZnO are appear. Temperature dependence I V characteristic was investigated in range of 25 K to 300 K by using Close Cycle Cryostat and using Helium as cooler agent. It is found that the resistance were decrease toward the higher temperature. The result shows that resistivity gradually decreased due to increases of temperature.
author_names: Kevin Alvin Eswar

F S Husairi

Sharifah Aminah Syed Mohamad

Aziz Azlinda

Mohamad Rusop

Syahrul Afzal Che Abdullah
title: Synthesis and Temperature Dependence of I V Characteristic of Spin Coated Nanostructured ZnO on P Type Silicon
year: 2013

abstract: An inorganic nano light emitting transistor (INLET) consisting of p type porous Si nanowires (PoSiNWs) and an n type ZnO nanofilm was integrated on a heavily doped p type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g As the V g is changed from 0 V to 20 V, the current level and light emission intensity in the orange red range increase by three and two times, respectively, with a forward bias of 20 V in the p n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built in potential at the p n junction by the applied gate electric field.
author_names: Sang Hoon Lee

Jong Woo Kim

Tae Il Lee

Jae Min Myoung
title: Inorganic Nano Light Emitting Transistor: p Type Porous Silicon Nanowire/n Type ZnO Nanofilm.
venue: Small
year: 2016