Query: spectral selectivity photodetectors

Candidate papers:

abstract: Gold based subwavelength photonic crystal (PhC) structures on GaAs substrate have been fabricated on a wafer scale. The structures have then been characterized and compared with related simulation results. Integrating these gold based PhC structures onto III V semiconductor infrared (IR) photodetectors through a top down approach has promising potential to enhance detector's performance; especially as its wafer scale fabrication method enables the direct adaption to high volume IR detector processing line.
author_names: Reyhaneh Soltanmoradi

Q Wang

Min Qiu

Jan Y Andersson
title: Spectral selectivity of subwavelength gold based photonic crystals on GaAs substrate
venue: 2013 7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics
year: 2013

abstract: In this paper, anisotropic graphene plasmonic structures are explored for light trapping and absorption enhancement in surrounding media. It is shown that electrically tunable and versatile spectral and polarization selectivity can be realized. Particularly, it is possible to control absorption of the incident light's polarization component at a specific wavelength by varying the Fermi energy with suitable geometric designs. It may find applications for new types of infrared and THz photodetectors and will promote the research of other novel polarization devices.
author_names: Wenbin Liu

Jianfa Zhang

Zhi Hong Zhu

Xiaodong Yuan

Shiqiao Qin
title: Electrically Tunable Absorption Enhancement with Spectral and Polarization Selectivity through Graphene Plasmonic Light Trapping
venue: Nanomaterials
year: 2016

abstract: Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4) and better than 5 x 10(4) measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
author_names: J Y Duboz

Nicolas Grandjean

Amelie Dussaigne

Mauro Mosca

Jean-Luc Reverchon

Pierre G Verly

Robert Simpson
title: Solar blind AlGaN photodetectors with a very high spectral selectivity
year: 2006

abstract: Semiconductor based photodetectors (PDs) convert light signals into electrical signals via a photon matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal to noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo detectors with improved performance, which could be applied to design and fabricate novel low dimensional PDs with ideal properties in the near future.
author_names: Meng Ding

Zhen Guo

Xuehang Chen

Xiaoran Ma

Lianqun Zhou
title: Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review
venue: Nanomaterials
year: 2020

abstract: We first report two dimensional (2D) perovskite Ca2Nb3O10 ultraviolet photodetectors (UV PDs) which are prepared via a facile calcination exfoliation method. The 2D Ca2Nb3O10 PDs demonstrate high performance at 3 V at 280 nm, high responsivity (14.94 A W 1) high detectivity (8.7 x 1013 Jones) high spectral selectivity (R280/R400 8.84 x 103) fast speed (0.08/5.6 ms) and long term stability, exceeding those of most reported UV PDs. Furthermore, the Ca2Nb3O10 PDs integrated with poly(ethylene terephthalate) (PET) show excellent flexibility and have high linear dynamic range (96 dB) Our work provides a general strategy for searching new UV PDs based on numerous layered niobates. The Ca2Nb3O10 nanosheets may be one of the optimum semiconductor materials for next generation high performance UV PDs.
author_names: Yuchuan Zhang

Siyuan Li

Ziliang Li

Hui Liu

Xinya Liu

Jiaxin Chen

Xiaosheng Fang
title: High Performance Two Dimensional Perovskite Ca2Nb3O10 UV Photodetectors.
venue: Nano letters
year: 2020

abstract: Self powered ultraviolet (UV) photodetectors (PDs) based on ZnO heterojunctions have attracted more attention due to the simple preparation and excellent photoresponse performance without any power supply. The self powered UV PDs based on NiO nanoflakes/ZnO nanorod arrays (NRs) heterojunctions were fabricated by a low cost, simple chemical bath deposition (CBD) method. The crystal quality, optical and electronic properties of ZnO NRs is modified by Al3+ ions additions in the precursor solution. The heterojunction devices with ZnO NRs grown in 0.5% Al3+ ions additions precursor solution exhibit a narrow UV spectral selectivity, high photoresponsivity R (85.12 mA/W) and detectivity D* (1.74 x 1012 cm*Hz1/2/W) and a fast response speed ~2 ms) under 378 nm UV light for low intensity irradiance (0.2 mW/cm2) at zero bias. The large built in electric field of the NiO/ZnO heterojunction with the increased Fermi level of ZnO NRs provide a strong driving force to separate and transfer the photo generated carriers, decrease the recombination of the carriers and then improve the photoresponse performance of heterojunction devices without external bias.
author_names: Chengtai Wei

Jianping Xu

Shaobo Shi

Yichen Bu

Rui Cao

J Chen

Jinjie Xiang

Xiaosong Zhang

Lan Li
title: The improved photoresponse properties of self powered NiO/ZnO heterojunction arrays UV photodetectors with designed tunable Fermi level of ZnO.
venue: Journal of colloid and interface science
year: 2020

abstract: We have explored the operation of resonant cavity light emitting diodes (RC LEDs) used as resonant cavity photodetectors (RC PDs) Our experiments were conducted using a variety of components, operating in diverse wavelength ranges and having different structural characteristics (different distributed Bragg reflector mirror reflectivities, different detuning, etc. The measurements show a clear and systematic angular and spectral dependence of the RC PD photodetected signal. The angular and spectral photosensitivity is derived not only from the quantum well absorption but largely from the microcavity enhancement factor and from the photodetection efficiency condition, which both are dependent on angle and wavelength. The detuning of the microcavity and the extension of the distributed Bragg reflector (DBR) stopband control the extension of the photosensitivity spectral window and the front/top DBR mirror reflectivity controls the angular wavelength selectivity. The fact that the RC PDs' angular and spectral selectivity can be controlled by proper microcavity design, together with their high bandwidth, opens the possibility of using the same RC PD device for detecting different WDM channels.
author_names: Mihail Dumitrescu

E -M Pavelescu

Charis Reith

Tomi Leinonen

Mikko Suominen

M Pessa
title: Angular and spectral selectivity of resonant cavity light emitting diodes used as resonant cavity photodetectors
venue: SPIE Photonics Europe
year: 2004

abstract: The performance of self powered UV photodetectors (PDs) without an external power source is far from satisfactory for practical applications. The nanostructure heterojunction based self powered UV PDs can enhance light absorption and provide more interface areas for photogenerated carrier separation. However, they suffer from a large dark current and low signal to noise ratio for carrier recombination due to thermal excitation. The p NiO nanoflakes/n ZnO nanorod array (NR) heterojunctions prepared by chemical bath deposition (CBD) demonstrated good rectifying characteristics and a distinct photovoltaic effect. The UV PDs based on p NiO/n ZnO nanostructure heterojunctions exhibited good spectral selectivity, high responsivity and a fast response speed without an external electric field under weak light radiation. The introduction of an MgO interfacial layer between NiO and ZnO NRs could modify the surface defect states of ZnO NRs and decrease the carrier recombination at the heterojunction interface, enhancing the performance of the self powered UV PDs. The investigation of the energy band structure of the heterojunctions revealed that the self powered photocurrent of the devices is correlated to the built in potential of the heterojunctions. The results demonstrate that the p NiO/n ZnO nanostructure heterojunctions with interfacial layers are promising for the development of self powered visible blind UV PDs with a high performance.
author_names: Chengtai Wei

Jianping Xu

Shaobo Shi

Rui Cao

Jing Chen

Hong Dong

Xiaosong Zhang

Shougen Yin

Lan Li
title: Self powered visible blind UV photodetectors based on p NiO nanoflakes/n ZnO nanorod arrays with an MgO interfacial layer
year: 2019

abstract: In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon based Fabry Perot optical microcavity whose input mirror is constituted by a double silicon on insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity x bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cmHz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.
author_names: Maurizio Casalino
title: Theoretical Investigation of Near Infrared Fabry Perot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates
venue: Micromachines
year: 2020

abstract: In this work we have investigated resonant cavity enhanced (RCE) photodetectors (PDs) exploiting the Internal Photoemission Effect (IPE) through a Single Layer Graphene (SLG) replacing metals in the Silicon (Si) Schottky junctions, operating at 1550 nm. The SLG/Si Schottky junction is incorporated into a Fabry Perot (F P) optical microcavity in order to enhance both the graphene absorption and the responsivity. These devices are provided of high spectral selectivity at the resonance wavelength which can be suitably tuned by changing the length of the cavity. We get a wavelength dependent photoresponse with external responsivity ~20 mA/W in a planar F P microcavity with finesse of 5.4. In addition, in order to increase the finesse of the cavity, and consequently its responsivity, a new device where the SLG has placed in the middle of a Si based F P microcavity has been proposed and theoretically investigated. We have demonstrated that, in a properly designed device, a SLG optical absorption, responsivity and finesse of 100% 0.43 A/W and 172 can be obtained, respectively. Unfortunately, the estimated bandwidth is low due to the planarity of the structure where both Ohmic (AI) and Schottky (SLG) contacts are placed in the same plane. In order to improve the PD bandwidth, we have fabricated and characterized a prototype of a vertical RCE SLG/Si Schottky PD where two contacts are both placed at the edges of a high finesse 200nm thick Si based microcavity. Thanks to this innovative structure an increase of the responsivity bandwidth product is expected. The insights included in this work can open the path for developing of a new family of high performance photodetectors that can find application in silicon photonics.
author_names: Maurizio Casalino

Teresa Crisci

Luigi Moretti

Mariano Gioffre

Mario Iodice

Giuseppe Coppola

Piera Maccagnani

Rita Rizzoli

Filippo Bonafe

Caterina Summonte

Vittorio Morandi
title: Silicon Meet Graphene for a New Family of Near Infrared Resonant Cavity Enhanced Photodetectors
venue: 2020 22nd International Conference on Transparent Optical Networks (ICTON)
year: 2020