Query: transparent electrodes MSM photodetector based on GaN

Candidate papers:

abstract: Metal semiconductor metal (MSM) photodetectors based on graphene/p type Si Schottky junctions are fabricated and characterized. Thermionic emission dominates the transport across the junctions above 260 K with a zero bias barrier height of 0.48 eV. The reverse bias dependence of the barrier height is found to result mostly from the Fermi level shift in graphene. MSM photodetectors exhibit a responsivity of 0.11 A/W and a normalized photocurrent to dark current ratio of 4.55 x 104 mW 1, which are larger than those previously obtained for similar detectors based on carbon nanotubes. These results are important for the integration of transparent, conductive graphene electrodes into existing silicon technologies.
author_names: Yanbin An

Ashkan Behnam

Eric Pop

Ant Ural
title: Metal semiconductor metal photodetectors based on graphene/p type silicon Schottky junctions
year: 2013

abstract: Indium tin oxide (ITO) layers were deposited onto n GaN films and/or glass substrates by electron beam evaporation. With proper annealing, we found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% at 360 nm. GaN based metal semiconductor metal (MSM) photodetectors with ITO transparent contacts were also fabricated. A maximum 0.12 A photocurrent with a photocurrent to dark current contrast higher than five orders of magnitude during ultraviolet irradiation were obtained for a photodetector annealed at 600/spl deg/C. We also found that the maximum photo responsivity at 345 nm is 7.2 and 0.9 A/W when the detector is biased at 5 and 0.5 V, respectively.
author_names: C -H Chen

S -J Chang

Y -K Su

Gou-chung Chi

Jim Y Chi

C A Chang

Jinn-Kong Sheu

J F Chen
title: GaN metal semiconductor metal ultraviolet photodetectors with transparent indium tin oxide Schottky contacts
venue: IEEE Photonics Technology Letters
year: 2001

abstract: We demonstrate a novel type of traveling wave photodetector: "metal semiconductor metal traveling wave photodetecor" (MSM TWPD) The demonstrated devices were fabricated using low temperature grown GaAs (LTG GaAs) In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by the self aligned process without e beam lithography. Electro optical sampling measurement results at different optical pumping levels are reported. Ultrahigh bandwidth (0.8 ps, 570 GHz transform bandwidth) performance was observed even under high optical power illumination /spl sim/1.8 mW) with 8.1% net quantum efficiency. Compared with a LTG GaAs based p i n TWPD and vertically illuminated MSM photodetector (PD) this novel TWPD has higher output saturation current with near terahertz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. It thus promises the application in high power distributed PD array or terahertz signal generation.
author_names: John E Bowers
title: Metal semiconductor metal traveling wave photodetectors
venue: IEEE Photonics Technology Letters
year: 2001

abstract: The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ~mS photoresponse, providing an alternative route toward multi wavelength photodetectors.
author_names: Fang Lin

Shaowen Chen

Jie Meng

Geoffrey Tse

Xuewen Fu

Fujun Xu

Bo Shen

Zhimin Liao

Dapeng Yu
title: Graphene/GaN diodes for ultraviolet and visible photodetectors
year: 2014

abstract: GaN metal semiconductor metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10 nm thick TiW film deposited with a 300 W RF power can still provide a reasonably high transmittance of 75.1% at 300 nm, a low resistivity of 1.7/spl times/10/sup 3/ /spl Omega//spl middot/cm and an effective Schottky barrier height of 0.773 eV on u GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3 V applied bias, it was found that minimum noise equivalent power and maximum D/sup of our detector were 1.987/spl times/10/sup 10/ W and 6.365/spl times/10/sup 9/ cmHz/sup 0.5/W/sup 1/ respectively.
author_names: C -K Wang

S -J Chang

Y -K Su

Yu-Zung Chiou

S -C Chen

C -S Chang

T K Lin

H L Liu

J Tang
title: GaN MSM UV photodetectors with titanium tungsten transparent electrodes
venue: IEEE Transactions on Electron Devices
year: 2006

abstract: Solar blind metal semiconductor metal (MSM) photodetectors (PDs) with Ni/Au semi transparent interdigitated contact electrodes are fabricated on Al0.4Ga0.6N epi layer grown by metal organic chemical vapor deposition on sapphire substrate. The PD exhibits ultra low dark current in fA range at room temperature (RT) under 20 V bias and a corresponding breakdown voltage higher than 300 V. The PD also shows a maximum RT quantum efficiency of 64% at 275 nm under 10 V bias with a solar blind/ultraviolet (UV) rejection ratio up to four orders of magnitude. Even at a high temperature of 150degC, the dark current of the PD is still in fA range with a reasonable rejection ratio of more than 8000, suggesting its potential applications for high temperature deep UV detection. The ultra low dark current achieved is believed to be related to the high temperature AlN buffer layer used in the epi structure as well as the coplanar configuration of the MSM PD itself.
author_names: Feng Xie

Hai Lu

Dunjun Chen

Xiaoli Ji

F Yan

Rong Zhang

Youdou Zheng

L Li

Jianjun J Zhou
title: Ultra Low Dark Current AlGaN Based Solar Blind Metal Semiconductor Metal Photodetectors for High Temperature Applications
venue: IEEE Sensors Journal
year: 2012

abstract: GaN metal semiconductor metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 x 10 3 O cm and an effective Schottky barrier height of 0.777 eV on u GaN. We also achieved a peak responsivity of 0.15 A W 1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 x 10 10 W and 7.245 x 109 cm Hz0.5 W 1, respectively.
author_names: Cheng Kun Wang

Shoou Jinn Chang

Yan Kuin Su

Yu-Zung Chiou

C S Chang

T K Lin

Han-Yin Liu

Jing-Jou Tang
title: High detectivity GaN metal semiconductor metal UV photodetectors with transparent tungsten electrodes
year: 2005

abstract: Abstract In this paper, a solar blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3x104 at the bias of 5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.
author_names: Tao He

Yukun Zhao

Xiaodong Zhang

Wen-kui Lin

Kai Fu

Chi-Hsiang Sun

Fengfeng Shi

Xiaoyu Ding

Guohao Yu

Kai Zhang

Shulong Lu

Xinping Zhang

Baoshun Zhang
title: Solar blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction
year: 2018

abstract: GaN based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50 nm thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and the n GaN. With a 3 nm thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent to dark current contrast as high as 2.5x104.
author_names: Yu-Zung Chiou

Yan Kuin Su

Shoou Jinn Chang

Jone F Chen

Chia-Sheng Chang

Sen-Hai Liu

Yi-Chao Lin

Chin-Hsiang Chen
title: Transparent TiN Electrodes in GaN Metal Semiconductor Metal Ultraviolet Photodetectors
year: 2002

abstract: In this study, we design and demonstrate a novel type of self powered UV photodetectors (PDs) using single crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self powered UV PDs with asymmetric metal semiconductor metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as assembled PDs have a high on/off ratio of 19173 and a fast response speed (tr 0.09 s, tf 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures and ZnS heterostructure based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self powered mode can reach as high as 19172, 2.56 A/W and 1.67 x 1010 cm Hz1/2 W 1, respectively. In addition, the photosensing performance of the self powered UV PDs is studied in different ambient conditions (e.g. in air and vacuum) Moreover, a physical model based on band energy theory is proposed to explain the origin of the self driven photoresponse characteristic in our device. The totality of the above study signifies that the present self powered ZnS NTs based UV nano photodetector may have promising application in future self powered optoelectronic devices and integrated systems.
author_names: Qinwei An

Xianquan Meng

Ke Xiong

Yunlei Qiu
title: Self powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed
venue: Scientific Reports
year: 2017