Query: Semiconductor Physical Electronics

Candidate papers:

abstract: The purpose of this book is to provide the reader with a self contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one year graduate course sequence taught by this author for many years in the .Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal semiconductor devices, the p n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics."
author_names: Sheng San Li
title: Semiconductor Physical Electronics
year: 1993

author_names: Slobodan Mijalkovic
title: Semiconductor physical electronics
year: 1997

abstract: Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced power electronic devices. This material has been considered to be useful for abrasive powder, refractory bricks as well as ceramic varistors. Big changes have occurred owing to the author's inspirational idea in 1968 to "make transistors from unusual material" The current paper starts by describing the history of SiC research involving fundamental studies by the author's group: unique epitaxial crystal growth techniques, the physical characterization of grown layers and processes for device fabrication. Trials for fabricating SiC power devices and their characteristics conducted until 2004 are precisely described. Recent progress in SiC crystal growth and peripheral techniques for SiC power devices are introduced. Finally, the present progress concerning SiC power devices is introduced together with the implementation of those devices in society.
author_names: Hiroyuki Matsunami
title: Fundamental research on semiconductor SiC and its applications to power electronics
venue: Proceedings of the Japan Academy. Series B, Physical and biological sciences
year: 2020

abstract: Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light emitting devices, sensors and photovoltaic cells. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single electron and single photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro nano, optoelectronics and quantum devices.
author_names: A L Aseev

Alexander V Latyshev

A V Dvurechenskii
title: Semiconductor Nanostructures for Modern Electronics
year: 2020

abstract: Future universal quantum computers solving problems of practical relevance are expected to require at least $10^6$ qubits, which is a massive scale up from the present numbers of less than 50 qubits operated together. Out of the different types of qubits, solid state qubits are considered to be viable candidates for this scale up, but interfacing to and controlling such a large number of qubits is a complex challenge that has not been solved yet. One possibility to address this challenge is to use qubit control circuits located close to the qubits at cryogenic temperatures. In this work we evaluate the feasibility of this idea, taking as a reference the physical requirements of a two electron spin qubit and the specifications of a standard 65 nm complementary metal oxide semiconductor (CMOS) process. Using principles and flows from electrical systems engineering we provide realistic estimates of the footprint and of the power consumption of a complete control circuit architecture. Our results show that with further research it is possible to provide scalable electrical control in the vicinity of the qubit, with our concept.
author_names: Lotte Geck

Andre Kruth

Hendrik Bluhm

Stefan van Waasen

Stefan Heinen
title: Control Electronics For Semiconductor Spin Qubits
venue: ArXiv
year: 2019

abstract: Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit (BFOM) so it is a promising candidate for the next generation high power devices including Schottky barrier diode (SBD) In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3 based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on resistance have been summarized and compared. Finally, the prospect of Ga2O3 based SBD for power electronics application has been analyzed.
author_names: Huiwen Xue

Qiming He

Guangzhong Jian

Shibing Long

Tao Pang

Ming Liu
title: An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor Based Schottky Barrier Diode for Power Electronics Application
venue: Nanoscale Research Letters
year: 2018

abstract: The response of the electronic devices subjected to the Electromagnetic Pulse (EMP) effect is a complex problem. The damage to the electronic device due to the EMP is one of the main failure mechanisms in the modern semiconductor electronic systems. The study of the induced physical effects on the semiconductor electronics in this particular aspect of damage is applicable not only to EMP problems but is also applicable when the high transient voltages appear in the circuits whether the pulse origin is EMP, or a transient transform within the system itself, which we will also address briefly.
author_names: V V Shurenkov

Russian Federation
title: The Induced Physical Effects on the Semiconductor Electronics under Electromagnetic Pulse
year: 2015

abstract: Semiconductor nanoparticles is an important class of nanostructured materials that have a plethora of interesting physical, chemical, mechanical, optical, and electronic, properties. This chapter provides an overview of research pertaining to various nanostructured materials in general and core shell nanoparticles (CSNs) in particular. Different classification criteria of nanostructured materials based on their sources, dimensions, structural configurations, and nature of core/shell materials have been discussed. Semiconducting core shell nanoparticles are segregated into different types based on the energy levels of the core and shell materials. Optical and electronic properties of CSNs along with synthesis techniques are discussed in details. Moreover, semiconductor core shell nanostructure materials highlight the key developments and current status in fields, such as electronic, health, agricultural, food processing, sustainable energy, and environmental catalysis. This chapter covers an introduction to the field of semiconductor and core shell nanostructures and provides comprehensive understanding to various aspects of these materials in details.
author_names: Manoj Kumar Nayak

Jaswant Singh

Baljit Singh

Shilpa Soni

Vidhu Pandey

Sachin Tyagi
title: Introduction to semiconductor nanomaterial and its optical and electronics properties
year: 2017

abstract: Superconductivity is a rare physical state in which matter is able to conduct electricity maintain a flow of electrons without any resistance. It can only be found in certain materials, and even then it can only be achieved under controlled conditions of low temperatures and high pressures. New research from a team including Carnegie's Elissaios Stavrou, Xiao Jia Chen, and Alexander Goncharov hones in on the structural changes underlying superconductivity in iron arsenide compounds those containing iron and arsenic. [26]
author_names: George Rajna
title: Atom Thin Semiconductor for Electronics
year: 2017

abstract: In recent years, growing attention has been paid to the threat posed by high power microwave electromagnetic interference, which can couple into semiconductor electronic devices intentionally from microwave sources or unintentionally due to the proximity to general environmental HF signals. The microwave interference is often considered to have a pulse width ranging from several to several hundreds of nanoseconds. This paper examines physical mechanism of malfunction and destruction of electronic devices by high power microwaves electromagnetic pulse
author_names: V V Shurenkov

V S Pershenkov
title: ELECTROMAGNETIC PULSE EFFECTS AND DAMAGE MECHANISM ON THE SEMICONDUCTOR ELECTRONICS
year: 2016