Query: gan hemts-an overview of device

Candidate papers:

abstract: Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
author_names: Umesh K Mishra

Primit Parikh

Yifeng Wu
title: AlGaN/GaN HEMTs an overview of device operation and applications
venue: Proc. IEEE
year: 2002

abstract: The research presents AlGaN/GaN HEMTs device characterizations at different temperatures using physics based numerical simulation. Industry standard simulation tool Silvaco ATLAS is used to characterize the various electronic properties of the device. An extensive theoretical overview is done to achieve the most comprehensive values for GaN and AlGaN properties, as discussed in the paper. This research is mainly focused on simulation of temperature dependent device performances as well as on some other material properties that are not well defined in ATLAS. Energy bandgap, density of states, saturation velocities, surface traps, polarization effect, carrier lifetime and mobility, permittivity, effective Richardson's constant, and donor and acceptor energy levels are considered as critical parameters for predicting temperature effect in ALGaN/GaN HEMT. Various aspects of device performance are analyzed at high temperature along with the different bias configurations.
author_names: Hasina F Huq

Bashirul Polash
title: Physics based numerical simulation and device characterizations of AlGaN/GaN HEMTs with temperature effects
venue: Microelectron. J.
year: 2011

abstract: As GaN based amplifier technology is garnering interest due to its inclusion into major proposed DoD systems, we look to extend the operating frequency and scale the output power of the technology to the millimeter wavelength (MMW) regime (30 300 GHz) Enabling power performance in this frequency range not only entails geometric device scaling, but also requires novel heterostructure and device design to facilitate simultaneous high frequency response and high operating voltage. In this regard, it cannot be assumed that the reliability of previous frequency nodes will extend into the MMW regime. In this talk, an overview of the challenges and tradeoffs of scaling GaN based devices will be presented as well as a look into NRL's approach to MMW GaN HEMT design including initial reliability data at 40 GHz.
author_names: Brian P Downey
title: GaN HEMTs for millimeter wavelength power amplifiers
year: 2014

abstract: Due to its outstanding materials properties the semiconductor system (Al,Ga)N is a very promising candidate for high power electronic applications covering communication, radar and power conversion. In fact GaN is already considered to be the most important semiconductor besides silicon. In this invited contribution we give an overview of epitaxial growth, device processing, characterization and reliability assessment of electronic devices based on this material.
author_names: Patrick Waltereit

Wolfgang Bronner

Peter Bruckner

Michael Dammann

Richard Reiner

S Muller

Jutta Kuhn

Michael Muser

Ruediger Quay

Michael Mikulla

Oliver Ambacher
title: Recent developments in GaN HEMTs and MMICs for high power electronics
year: 2013

abstract: Cuvillier Verlag Jun 2012, 2012. Taschenbuch. Book Condition: Neu. 208x147x14 mm. Neuware Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) for high voltage, high power switching and regulating for space applications are studied in this work. Efficient power switching is associated with operation in high OFF state blocking voltage while keeping the ON state resistance, the dynamic dispersion and leakage currents as low as possible. The potential of such devices to operate at high voltages is limited by a chain of factors such as subthreshold leakages and the device geometry. Blocking voltage enhancement is a complicated problem that requires parallel methods for solution; epitaxial layers design, device structural and geometry design, and suitable semiconductor manufacturing technique. In this work physical based device simulation as an engineering tool was developed. An overview on GaN based HEMTs physical based device simulation using Silvaco oATLASo is given. The simulation is utilized to analyze, give insight to the modes of operation of the device and for design and evaluation of innovative concepts. Physical based models that describe the properties of the semiconductor material are introduced. A detailed description of the specific AlGaN/GaN HEMT structure definition and geometries are given along with the complex fine meshing requirements. Nitride semiconductor specific material.
author_names: Eldad Bahat Treidel
title: GaN Based HEMTs for High Voltage Operation. Design, Technology and Characterization
year: 2012

abstract: GaN based devices are creating a technological revolution and are expected to replace silicon transistors for the development of high efficiency power converters. For this reason, a significant research effort is being spent towards the fabrication of high performance and high reliability GaN transistors. Despite this, the reliability of GaN HEMTs is still limited by a number of factors, that can significantly reduce device lifetime and lead to early failures. This paper presents an overview of the physical processes responsible for the failure of GaN transistors for power electronics, with focus on: (i) degradation under off state conditions; (ii) degradation in semi on conditions; (iii) degradation in the on state (positive gate bias) The results presented here help understanding the most common degradation modes of GaN devices and can be used to improve manufacturing technology.
author_names: Gaudenzio Meneghesso

Matteo Meneghini

Carlo de Santi

Enrico Zanoni
title: GaN based lateral and vertical devices: physical mechanisms limiting stability and reliability
venue: 2019 Electron Devices Technology and Manufacturing Conference (EDTM)
year: 2019

abstract: An overview of a surface potential (SP) based model for AlGaN/GaN HEMTs named "Advanced SPICE Model for High Electron Mobility Transistor" (ASM HEMT) is presented in this paper. Recently, our model has been selected as industry standard model for GaN HEMTs by Si2 Compact Model Coalition (CMC) after more than five years of rigorous evaluation and testing by semiconductor companies. In our model, we preserve the 2DEG nature of the channel by self consistently solving the Schrodinger's and Poisson's equations to obtain an analytical expression for the surface potential after considering two energy sub bands in the triangular quantum well at the hetero interface. We proceed to calculate all other important quantities such as the intrinsic charges, drain current etc. in terms of the surface potential, valid for a wide range of bias conditions. We have incorporated real device effects such as Access Resistances, Drain Induced Barrier Lowering (DIBL) Mobility Degradation, Channel Length Modulation, SelfHeating, Gate Current, Noise, Field Plates etc. We have a working trap model incorporated into the main model and it is validated against pulsed IV measurements, harmonic balance power sweeps and load pull for a commercial RF GaN HEMT. We have also validated the model for power devices with field plates and have been able to accurately capture the capacitances incorporated due to the field plates.
author_names: Sheikh Aamir Ahsan

Yogesh Singh Chauhan

Raghvendra Dangi

Saptarshi Ghosh

Sourabh Khandelwal

Ahtisham Pampori
title: ASM HEMT: Industry Standard GaN HEMT Model for Power and RF Applications
year: 2018

abstract: The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent circuit models for GaN HEMTs, which are the preferred devices for high power high frequency applications. This overview is meant to provide a practical modeling know how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current gain, because of the relatively large intrinsic capacitances, and the low frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright (c) 2015 John Wiley Sons, Ltd.
author_names: Giovanni Crupi

Valeria Vadala

Paolo Colantonio

Elisa Cipriani

Alina Caddemi

Giorgio Vannini

Dominique M M -P Schreurs
title: Empowering GaN HEMT models: The gateway for power amplifier design
year: 2017

abstract: The hydride vapor phase epitaxy technique has been used to grow bulk GaN crystals for processing into freestanding substrates for optoelectronic and microelectronic applications. Substrates up to 2 inches in diameter were fabricated and tested for materials properties and device applications. Defect densities as low as 5x10 cm were measured via CL imaging. Semiinsulating electrical behavior was achieved through Fe doping with room temperature resistivity measurements as high as 2x10 O*cm measured using COREMA. Schottky diodes with >600V breakdown voltage and 20 ns reverse recovery time were fabricated. AlGaN/GaN HEMTs were fabricated and tested, resulting in an output power density of 5.0 W/mm at 2 GHz with a poweradded efficiency of 35% and an associated gain of 14.5 dB. This constitutes the first report of significant power density from MBE grown HEMTs on freestanding HVPE GaN substrates.
author_names: Andrew D Hanser

L Liu

Edward Alfred Preble

Denis V Tsvetkov

M Tutor

N Mark Williams

Keith R Evans

Y Zhou

D Wang

Claude Ahyi

Chin-Che Tin

J Williams

M Park

David F Storm

D Scott Katzer

S C Binari

Jason A Roussos

Jeffrey A Mittereder
title: An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications
year: 2006

abstract: In this paper, we aim to present an overview of a surface potential (SP) based model named "Advanced Spice Model for High Electron Mobility Transistor" (ASM HEMT) for AlGaN/GaN HEMTs. This model is presently under consideration in the phase III of industry standardization by the Compact Model Coalition (CMC) SP of GaN HEMT is obtained by solving Schrodinger and Poisson equations in the triangular potential well considering the first two energy subbands. The core drain current model and a intrinsic charge model are derived using the developed SP model. Various real device effects like: velocity saturation, drain induced barrier lowering (DIBL) self heating, field dependent mobility, non linear access region resistances etc. are included in the core drain current model to represent real GaN HEMTs. Field plate (FP) model is incorporated to predict accurate current and capacitance trends observed in the high power GaN HEMTs with source and gate connected field plates. Along with the gate current model, non linear trapping effects are also included in the model to capture larghe signal high frequency device behavior. This model is extensively validated with the experimental data of both high power and high frequency GaN HEMTs.
author_names: Sudip Ghosh

Sheikh Aamir Ahsan

Avirup Dasgupta

Sourabh Khandelwal

Yogesh Singh Chauhan
title: GaN HEMT modeling for power and RF applications using ASM HEMT
venue: 2016 3rd International Conference on Emerging Electronics (ICEE)
year: 2016