Query: A Simple Diode Model with Reverse Recovery

Candidate papers:

abstract: The basic diode charge control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport equations are simplified using the lumped charged concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime and diffusion transit time, can easily be determined from a switching waveform.
author_names: Peter O Lauritzen

C L Ma
title: A simple diode model with reverse recovery
year: 1991

abstract: The diode model presented is a simplified physical model for a high voltage p i n structure operating in high level injection, as is typical for most power diodes. The model is an extension of the basic charge control diode model using the lumped charge concept. The equations for both forward and reverse recovery as well as the emitter recombination are derived from simplified semiconductor charge transport equations. The complete model requires only seven simple equations and three additional device parameters beyond the generic SPICE diode model.
author_names: C L Ma

Peter O Lauritzen
title: A simple power diode model with forward and reverse recovery
year: 1991

abstract: The diode model presented is a simplified physical model for a high voltage p i n structure operating in high level injection, as is typical for most power diodes. The model is an extension of the basic charge control diode model using the lumped charge concept. The equations for both forward and reverse recovery as well as the emitter recombination are derived from simplified semiconductor charge transport equations. The complete model requires only seven simple equations and three additional device parameters beyond the generic SPICE diode model.<ETX>
author_names: Cliff L Ma

Peter O Lauritzen
title: A simple power diode model with forward and reverse recovery
venue: PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference
year: 1991

abstract: In the quest for higher power density in switching converters, the use of SiC MOSFETs provides increased switching speed, which allows higher switching frequencies and smaller filtering elements. In order to accurately estimate switching losses in these fast high voltage devices, a detailed analytical loss model considering parasitic effects and parasitic elements is required. In this paper, a simple and accurate analytical loss model is presented which considers the device junction capacitances, parasitic inductances and reverse recovery of the high voltage SiC MOSFET body diode. The reverse recovery time is calculated and used in the model. The proposed model provides easy to use closed form mathematical equations and gives insight into the switching process and the parameters that affect it. Analytical equations are validated by experimental results.
author_names: Soheila Eskandari

Kang Peng

Bo Tian

Enrico Santi
title: Accurate Analytical Switching Loss Model for High Voltage SiC MOSFETs Includes Parasitics and Body Diode Reverse Recovery Effects
venue: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2018

abstract: The basic diode chargecontrol model used in SPICE is extended by employing the lumped charge concept of Linvill to derive a set of model equations from simplified device physics. Both forward and reverse recovery phenomena are included as well as emitter recombination. The complete model requires only 7 relative simple equations and three additional device parameters beyond the generic SPICE diode model. +t
author_names: Cliff L Ma
title: A SIMPLE POWER DIODE MODEL WITH FORWARD AND REVERSE RECOVERY
year: 2004

abstract: Super junction technology has pushed the silicon limits to new heights. The CoolMOS/spl trade/ device is based on the super junction technology and provides high on state conductivity with ultra fast switching speed. However, the dynamic behavior of the intrinsic body diode may limit its usage in converter topologies where the body junction diode conducts. In this paper, we report on the static blocking and reverse recovery charge dynamics of the CoolMOS body junction diode. An explanation of the diode reverse recovery mechanism is provided and a model for its charge dynamics is presented and validated with the measured results.
author_names: Rajni K Burra

Krishna Shenai
title: CoolMOS integral diode: a simple analytical reverse recovery model
venue: IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03.
year: 2003

abstract: A practical parameter extraction method for physics based lumped charge silicon carbide (SiC) merged PiN Schottky (MPS) diode model is presented. The physical parameters of a device model are necessary for accurate simulation but are usually not provided as these parameters are the core business profits of the manufacturers. The values of SiC MPS diode parameters are often based on assumptions or given in a wide range, thus the accuracy of the model simulation is compromised and the application of the model is also limited. The proposed method includes semiconductor physical and structural parameters and only some basic experiments are needed, such as reverse recovery and static characteristic experiments. Based on the lumped charge SiC MPS diode model, reasonable assumptions are used and simple mathematical formulas are derived for the extraction of the parameters. Finally, the method is validated by two different SiC MPS diodes from CREE and CETC having the ratings of 1200 V/300 A and 3300 V/60 A.
author_names: Fei Xiao

Yifei Luo

Yaoqiang Duan
title: Parameter extraction method for a physics based lumped charge SiC MPS diode model
year: 2020

abstract: Abstract A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result.
author_names: Yusuke Yamashita

Hiroshi Tadano
title: Numerical modeling of reverse recovery characteristic in silicon pin diodes
year: 2018

abstract: A method called the HYBRID method, which solves the differential equations describing the semiconductor partly analytically and partly numerically, is presented. The advantages of this model compared with other ones are: continuous description of the switching process; simple simulator equations (no convergence problems) accurate solution of the ambipolar diffusion equation; and adaptability of the method to other devices. Important effects such as conductivity modulation and field dependence of charge carrier velocity are considered as well as the effect of mobile charge carriers in the space charge region. The model is programmed in FORTRAN 77 and implemented in the SABER circuit simulator, and has been verified for different ranges of operation.<ETX>
author_names: Holger Goebel

Kurt Hoffmann
title: Power diode HYBRID model with forward and reverse recovery for use in circuit simulators
venue: [Proceedings] APEC '92 Seventh Annual Applied Power Electronics Conference and Exposition
year: 1992

abstract: A simplified behavioral model of diode reverse recov ery, which is based on the lumped charge control concept, is proposed and tested experimentally. The model can be imple mented in discrete transition simulators that do not apply full physical models of devices and it does not require heavy compu tational resources. The parameters of the model can be easily extracted from a simple single measurement. The model is dem onstrated in the PSIM platform and is verified experimentally for various turn off conditions.
author_names: Natan Krihely

Sam Ben-Yaakov
title: Simulation Bits: Adding the Reverse Recovery Feature to a Generic Diode
year: 2011