Query: Spin nano–oscillator–based wireless communication

Candidate papers:

abstract: Spin torque nano oscillators (STNOs) have outstanding advantages of a high degree of compactness, high frequency tunability, and good compatibility with the standard complementary metal oxide semiconductor process, which offer prospects for future wireless communication. There have as yet been no reports on wireless communication using STNOs, since the STNOs also have notable disadvantages such as lower output power and poorer spectral purity in comparison with those of LC voltage controlled oscillators. Here we show that wireless communication is achieved by a proper choice of modulation scheme despite these drawbacks of STNOs. By adopting direct binary amplitude shift keying modulation and non coherent demodulation, we demonstrate STNO based wireless communication with 200 kbps data rate at a distance of 1 m between transmitter and receiver. It is shown, from the analysis of STNO noise, that the maximum data rate can be extended up to 1.48 Gbps with 1 ns turn on time. For the fabricated STNO, the maximum data rate is 5 Mbps which is limited by the rise time measured in the total system. The result will provide a viable route to real microwave application of STNOs.
author_names: Hyun Seok Choi

Sun-Yool Kang

Seong Jun Cho

Inn Yeal Oh

Mincheol Shin

Hyuncheol Park

Chaun Jang

Byoung-Chul Min

Sang-il Kim

Seungyung Park

Chul Soon Park
title: Spin nano oscillator based wireless communication
venue: Scientific reports
year: 2014

abstract: A low power spin torque nano oscillator (STNO) based wireless communication is demonstrated with a 180 nm CMOS transmitter and receiver. The ON OFF keying (OOK) modulation is employed to overcome the inherent drawbacks of the STNO, such as low output power and spectral purity, despite its advantages of a wide frequency tuning range and nano scale dimensions. As the magnetic tunnel junction (MJT) STNO with an MgO barrier has a maximum oscillation power as small as 75 dBm at 3.39 GHz, a 68 dB high gain amplification throughout the transmitter and receiver is needed for a 1 m wireless communication. A 36 dB high gain amplifier with a 3.9 dB low noise figure is implemented for the OOK transmitter together with an external modulator. The receiver is composed of a 3.5 dB low noise amplifier (LNA) with a high gain of 27 dB, gain boosted envelope detector, and baseband amplifier. The transmitter and receiver amplifiers are implemented with a highly isolated ground between each stage in order to prevent oscillations even at the high gain. The communication system with the STNO achieves an 11.8 Mb/s wireless data transmission over 1 m, with a power consumption of 41.4 mW. The implemented transmitter and receiver occupy 2.34 and 4.08 mm2, including all of the pads, respectively. The proposed system achieves the highest data rate with the lowest power consumption compared to those of the previous state of the art STNO based wireless communication systems.
author_names: Hee Sung Lee

Seung Hun Kim

Tae Hwan Jang

Hee Gyum Park

Byoung-Chul Min

Seungyung Park

Chul Soon Park
title: Power Efficient Spin Torque Nano Oscillator Based Wireless Communication With CMOS High Gain Low Noise Transmitter and Receiver
venue: IEEE Transactions on Magnetics
year: 2019

author_names: Hyunseok Choi
title: Implementation of spin nano oscillator based wireless communication seupin nano baljingireul sayonghan museontongsin guhyeon
year: 2015

title: Spin nano oscillator based wireless communication
year: 2014

abstract: In this study, wireless transmitter and receiver including high gain amplifiers have been implemented in CMOS circuits for the first time for spin torque nano oscillator based wireless communication. The system block diagram is defined, and the power budget is calculated for 1 meter OOK wireless communication. The transmitter consists of STNO, LNA and SPDT switch, the receiver consists of LNA, demodulator and Schmitt trigger, and all are implemented in 0.18 um CMOS. Simulated gain of the LNA in transmitter and receiver are 38.5 dB and 31.0 dB, respectively. The fabricated chip sizes of transmitter and receiver are 2.34 and 4.42 mm2. The transmitter and receiver operate with 18 mW and 21.2 mW power dissipation, respectively. An STNO based wireless communication will be demonstrated using CMOS circuits in the presentation.
author_names: Hee Sung Lee

Seung Hun Kim

Tae Hwan Jang

Chul Soon Park
title: CMOS transmitter and receiver for spin torque nano oscillator based wireless communication
venue: 2018 International Conference on Electronics, Information, and Communication (ICEIC)
year: 2018

abstract: Wireless transmission requires a circuitry to generate GHz range signal. Spin transfer torque devices are one of the promising candidates for generating stable signal in the GHz range through collective precession of the local spins in one of the ferromagnetic layer, known as free layer. Another ferromagnetic layer, fixed layer, acts as a medium to convert the incoming electric current into spin polarized current. This spin polarized current drives local spins of the free layer into constant precession. Factors like high linewidth, low output power and modulation rate are yet to be optimized to make these devices ready for use in practical wireless communication system. Recently, H. S. Choi et al. has demonstrated the first ever complete wireless communication system using spin torque nano oscillators (STNOs) through the amplitude shift keying (ASK) modulation. Here, we present a more detailed study of wireless communication as a function of the modulation frequency and distance between receiver and transmitting antennas (Tx) in order to determine modulation rate limits.
author_names: R Sharma

Philipp Durrenfeld

M Ranjbar

Randy K Dumas

Johan Akerman

Pranaba Kishor Muduli
title: Modulation rate study in spin torque oscillator based wireless communication system
venue: 2015 IEEE Magnetics Conference (INTERMAG)
year: 2015

abstract: We study a wireless communication system based on a magnetic tunnel junction spin torque nano oscillator (STNO) by employing amplitude shift keying modulation. By varying the pulse modulation frequency (fm) from 1 kHz to 2 MHz and distance (D) between the antenna from 25 to 150 cm, we show a maximum data rate of 6 Mb/s (at D 25 cm and fm 1 MHz) a limit imposed by our setup and noise generated by the STNO itself. We also report the average amplitude noise (Sda) and average white frequency noise (Swh) of the wireless communication system and discuss their dependence on the distance between the antennas.
author_names: R Sharma

Philipp Durrenfeld

M Ranjbar

Randy K Dumas

Johan Akerman

Pranaba Kishor Muduli
title: Modulation Rate Study in a Spin Torque Oscillator Based Wireless Communication System
venue: IEEE Transactions on Magnetics
year: 2015

abstract: Abstract An important property of spin torque nano oscillators (STNOs) is their ability to produce a frequency modulated (FM) signal, which is very critical for communication applications. We here demonstrate a novel single sideband (SSB) modulation phenomenon using a magnetic tunnel junction (MTJ) based STNO, which saves transmission bandwidth and in principle should minimize attenuation for wireless communication. Experimentally, lower single sidebands (LSSBs) have been successfully demonstrated over a wide range of modulation frequency, fm 150 MHz 1 GHz. The observed LSSBs are determined by the intrinsic properties of the device, which can be modeled well by a nonlinear frequency and amplitude modulation formulation and reproduced in macrospin simulations. Moreover, our macrospin simulation results show that the range of modulation current and modulation frequency for generating SSBs can be controlled by the field like torque and biasing conditions.
author_names: Raghav Sharma

Naveen Sisodia

Ezio Iacocca

Ahmad A Awad

Johan Akerman

Pranaba Kishor Muduli
title: A high speed single sideband generator using a magnetic tunnel junction spin torque nano oscillator
venue: Scientific Reports
year: 2017

abstract: Spin transfer torque nano oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices. Using the non coherent non equilibrium Green's function spin transport formalism self consistently coupled with the stochastic Landau Lifshitz Gilbert Slonczewski's equation and the Poisson's equation, we elucidate the role of elastic phase breaking on the proposed STNO design featuring double barrier resonant tunneling. Demonstrating the immunity of our proposed design, we predict that despite the presence of elastic dephasing, the resonant tunneling magnetic tunnel junction structures facilitate oscillator designs featuring a large enhancement in microwave power up to 8mW delivered to a 50O load.
author_names: Abhishek A Sharma

Ashwin A Tulapurkar

Bhaskaran Muralidharan
title: Role of phase breaking processes on resonant spin transfer torque nano oscillators
year: 2018

abstract: Spin orbit torque nano oscillators based on bilayers of ferromagnetic and nonmagnetic metals are ultra compact current controlled microwave signal sources. They are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip to chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance of the ferromagnetic layer. Here we experimentally show that the output power of a spin orbit torque nano oscillator can be significantly enhanced without compromising its structural simplicity. Addition of a ferromagnetic reference layer to the oscillator allows us to employ current in plane giant magnetoresistance to boost the output power of the device. This enhancement of the output power is a result of both large magnitude of giant magnetoresistance compared to that of anisotropic magnetoresistance and their different angular dependencies. Our results hold promise for practical applications of spin orbit torque nano oscillators. Spin orbit torque driven oscillators, such as spin Hall oscillators, form a class of devices that are intensively studied due to potential practical applications in spintronics. Here, the authors modify the conventional ferromagnetic/nonmagnetic stack to include an additional ferromagnetic layer and leverage the giant magnetoresistance effect to enhance the direct conversion of an in plane driving current into the microwave output signal.
author_names: Jen-Ru Chen

Andrew Smith

Eric Arturo Montoya

Jia Grace Lu

Ilya N Krivorotov
title: Spin orbit torque nano oscillator with giant magnetoresistance readout
year: 2020