Query: 1.5-/spl mu/m InGaAsP-InP slab-coupled optical waveguide lasers

Candidate papers:

abstract: We report the demonstration of high power semiconductor slab coupled optical waveguide lasers (SCOWLs) operating at a wavelength of 1.5 /spl mu/m. The lasers operate with large (4/spl times/8 /spl mu/m diameter) fundamental mode and produce output power in excess of 800 mW. These structures have very low loss /spl sim/0.5 cm/sup 1/ enabling centimeter long devices for efficient heat removal. The large fundamental mode allows 55% butt coupling efficiency to standard optical fiber (SMF 28) Comparisons are made between SCOWL structures having nominal 4 and 5 /spl mu/m thick waveguides.
author_names: Jason Plant

Paul W Juodawlkis

R K Huang

Joseph P Donnelly

Leo J Missaggia

K G Ray
title: 1.5 /spl mu/m InGaAsP InP slab coupled optical waveguide lasers
venue: IEEE Photonics Technology Letters
year: 2005

abstract: We report the first demonstration of a high power semiconductor optical amplifier (SOA) based on the slab coupled optical waveguide concept. This concept allows the realization of SOAs having large fundamental optical modes, low loss, and small optical confinement factor. These attributes support large output saturation power, long length for efficient heat removal, and direct butt coupling to single mode fibers. The 1.5 /spl mu/m InGaAsP InP quantum well amplifier described here has a length of 1 cm, 1/e/sup 2/ intensity widths of 4 /spl mu/m (vertical) and 8 /spl mu/m (horizontal) a fiber to fiber gain of 13 dB, and a fiber coupled output saturation power of 630 mW +28 dBm) The measured butt coupling efficiency between the amplifier and SMF 28 is 55% Thus, the output saturation power of the amplifier itself is approximately 1.1 W +31 dBm)
author_names: Paul W Juodawlkis

Jason Plant

R K Huang

Leo J Missaggia

Joseph P Donnelly
title: High power 1.5 /spl mu/m InGaAsP InP slab coupled optical waveguide amplifier
venue: IEEE Photonics Technology Letters
year: 2005

abstract: Abstract The development of a high brightness semiconductor diode laser/amplifier concept, which utilizes a slab coupled optical waveguide (SCOW) region to achieve several important advances in performance, is presented. SCOW devices are capable of single spatial mode operation with a single lobed, large area, low aspect ratio beam. The SCOW concept is applicable to a wide variety of semiconductor material systems and wavelengths of interest. To date, SCOW devices have been demonstrated in the InGaAs/AlGaAs/GaAs, InGaAsP/InP, and AlGaAsSb/GaAs. High power lasers and optical amplifiers have been developed for numerous applications, including arrays for wavelength and coherent beam combining, narrow linewidth external cavity lasers, and mode locked lasers.
author_names: Joseph P Donnelly

Paul W Juodawlkis

Robin K Huang

Jason Plant

G M Smith

Leo J Missaggia

William Loh

Shawn M Redmond

Bien Chann

Michael K Connors

Reuel B Swint

George W Turner
title: Chapter 1 High Power Slab Coupled Optical Waveguide Lasers and Amplifiers
year: 2012

abstract: This study demonstrates that the large mode slab coupled optical waveguide concept can be applied to semiconductor optical amplifiers as well as to lasers. The (slab coupled optical waveguide laser) SCOWL concept is extended to 1.5 /spl mu/amplifiers with mode sizes that are compatible with standard SMF 28 fiber for simplified coupling. The performance of these initial devices is primarily limited by reduction in efficiency at high current. This limitation can be reduced through improved design of the heterobarriers that provide carrier confinement.
author_names: Paul W Juodawlkis

Jason Plant

Robin K Huang

Leo J Missaggia

Joseph P Donnelly
title: High power 1.5 /spl mu/m InGaAsP slab coupled optical waveguide amplifiers and lasers
venue: The 16th Annual Meeting of the IEEE Lasers and Electro Optics Society, 2003. LEOS 2003.
year: 2003

abstract: We have demonstrated the first SCOWL operating in a colliding pulse mode locked configuration. This laser has a repetition rate of 8.54 GHz with 70 dB fundamental mode suppression and average output power of 170 mW per facet. We measured a detection limited pulse width of 20 ps. The resultant pulse energy and peak power are 19.9 pJ and 1 W, respectively.
author_names: Jason Plant

Paul W Juodawlkis
title: High power 1.5 mm InGaAsP/InP Colliding Pulse Mode Locked Slab Coupled Optical Waveguide Laser
venue: LEOS 2006 19th Annual Meeting of the IEEE Lasers and Electro Optics Society
year: 2006

abstract: This paper reviews the SCOW technology and describe its application in mode locked SCOW external cavity lasers (ML SCOWECLs) optoelectronic oscillators (OEOs) and suppressed bias MWP links, limiting the discussion to 1.5 mm emitters fabricated using InGaAsP/InP quantum wells.
author_names: Paul W Juodawlkis

Jason Plant

William Loh

Siva Yegnanarayanan
title: High power, compact slab coupled optical waveguide (SCOW) emitters and their applications
venue: IEEE Avionics, Fiber Optics and Photonics Digest CD
year: 2012

abstract: We demonstrate an external cavity laser comprised of a novel InGaAsP/InP curved channel slab coupled optical waveguide amplifier and a fiber Bragg grating. The laser exhibits a technical noise limited linewidth of 130 kHz with 88 mW output power at 1556 nm
author_names: Paul W Juodawlkis

Jason Plant

Frederick J O'Donnell

Leo J Missaggia

R K Huang

Joseph P Donnelly
title: Narrow linewidth, high power 1556 nm slab coupled optical waveguide external cavity laser
venue: (CLEO) Conference on Lasers and Electro Optics, 2005.
year: 2005

abstract: Abstract Broad stripe 1.5 micrometers InGaAsP/InP MQW graded index SCH lasers with different waveguide widths and doping profiles were designed, fabricated and characterized. Studies of the characteristics of lasers with different p doping profiles as well as modeling data show that the heterobarrier electron leakage is responsible for the effect of optical power saturation with current. Broadened waveguide devices containing higher Zn concentration in the vicinity of p cladding/SCH interface yielded maximum output optical pulsed power density giving more than 16W from l00 micrometers aperture. Direct measurements of optical loss for BW lasers with different doping profiles have shown that doping can increase the internal loss of the device by more than two times, which explains the reduction of the device slope efficiency with doping. We have found that the benefit associated with the suppression of heterobarrier electron leakage outweighs lower efficiency near threshold leading to improved linearity of the light current characteristics and higher output optical power and brightness. Broadened waveguide lasers with doped p cladding/SCH interface have twice as high output optical power density and brightness compared to undoped BW devices.
author_names: Gregory L Belenky
title: Design and Implementation of High Power Pulse Operation Broadened Waveguide 1.5 mum InGaAsP/InP MQW Lasers
year: 2001

abstract: We demonstrate that free carrier absorption in cladding layers of long wavelength /spl lambda/=1.5 /spl mu/m and /spl lambda/=2 /spl mu/m) separate confinement quantum well laser diodes limits the differential efficiency and output power for such lasers if their waveguide thickness is designed from the considerations of the maximum optical confinement factor for quantum wells. Broadening of the waveguide up to 1 /spl mu/m considerably increases laser efficiency and does not increase threshold for the lasers with low and moderate output losses. Broadened waveguide design provides the record output powers at continuous and quasi continuous operation regimes.
author_names: Dmitri Z Garbuzov

Raymond J Menna

Hao Lee

Ramon U Martinelli

John C Connolly

L Xu

Stephen R Forrest
title: Broadened waveguide, low loss 1.5 /spl mu/m InGaAsP/InP and 2 /spl mu/m InGaAsSb/AlGaAsSb laser diodes
venue: Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
year: 1997

abstract: Summary form only given. Single frequency semiconductor lasers with emission wavelength at /spl sim/1.5 /spl mu/m are finding applications as chemical sensors because a large number of molecules have strong absorption bands at this wavelength region including ammonia. Tunable diode laser (TDL) spectroscopy employing tunable single longitudinal mode lasers provides a means in which, trace gases can be accurately monitored using systems that are relatively small in size and low in power consumption. Conventional distributed feedback (DFB) lasers can achieve wavelength selectivity through feedback from a periodic change in index or gain along the laser cavity and this usually requires regrowth, over the corrugation, greatly complicating the fabrication process and making the completed lasers susceptible to unreliability due to the defects at grating/regrowth interface. One way to eliminate this regrowth problem is to introduce the gratings after the lasing cavity is formed and to rely on the coupling of the evanescent optical fields. This has been demonstrated by etching the ridge first and then defining the gratings on both sides of the ridge to fabricate a laterally coupled (LC) ridge waveguide (RW) DFB laser. In this paper, we report on the lasing characteristics of InGaAsP/InP LC RW DFB lasers realized by a greatly simplified fabrication process.
author_names: Yong Kun Sin

Yueming Qui

Richard E Muller

Paul Donne Maker

Siamak Forouhar
title: Laterally coupled InGaAsP/InP distributed feedback lasers at 1.5 /spl mu/m for chemical sensing applications
venue: CLEO 2001
year: 2001