Query: Schottky component

Candidate papers:

abstract: A wide range of light absorption and rapid electron hole separation are desired for efficient photocatalysis. Herein, on the basis of a semiconductor like metal organic framework (MOF) a Pt@MOF/Au catalyst with two types of metal MOF interfaces integrates the surface plasmon resonance excitation of Au nanorods with a Pt MOF Schottky junction, which not only extends the light absorption of the MOF from the UV to the visible region but also greatly accelerates charge transfer. The spatial separation of Pt and Au particles by the MOF further steers the formation of charge flow and expedites the charge migration. As a result, the Pt@MOF/Au presents an exceptionally high photocatalytic H2 production rate by water splitting under visible light irradiation, far superior to Pt/MOF/Au, MOF/Au and other counterparts with similar Pt or Au contents, highlighting the important role of each component and the Pt location in the catalyst.
author_names: Juan-Ding Xiao

Lili Han

Jun Luo

Shuhong Yu

Hai-Long Jiang
title: Integration of Plasmonic Effects and Schottky Junctions into Metal Organic Framework Composites: Steering Charge Flow for Enhanced Visible Light Photocatalysis.
venue: Angewandte Chemie
year: 2018

abstract: We report on a high performance Pt/n Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ~30 A thick semi transparent Pt that has up to 90% transparency to UV radiation with wavelengths 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn on voltage of ~1 V and a rectification ratio of ~108 at 2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of ~110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of ~87.5% The cutoff wavelength and the out of band rejection ratio of the devices were ~260 nm and ~104, respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long time decay component which is common in photoconductive wide bandgap devices.We report on a high performance Pt/n Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using ~30 A thick semi transparent Pt that has up to 90% transparency to UV radiation with wavelengths 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn on voltage of ~1 V and a rectification ratio of ~108 at 2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of ~110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of ~87.5% The cutoff wavelength and the out of band rejection ratio of the devices were ~260 nm and ~104, respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long ti.
author_names: Fikadu Alema

Brian Hertog

Partha Mukhopadhyay

Yuewei Zhang

Akhil Mauze

Andrei Osinsky

Winston V Schoenfeld

James S Speck

Timothy J Vogt
title: Solar blind Schottky photodiode based on an MOCVD grown homoepitaxial b Ga2O3 thin film
venue: APL Materials
year: 2019

abstract: Studies of chemically induced hot electron flow over Schottky barriers in catalytic planar nanostructures provide a direct insight into underlying charge transfer processes involved in chemical energy dissipation at solid surfaces. A systematic approach is described here to separate the hot electron and thermal current contributions to the total generated current based on in situ resistive heating of cathode nanolayer of the Schottky structure. The method is applicable at high pressures in the gas phase. Analysis of the current induced by H2 oxidation to H2O on Pt/n GaP nanostructure is performed for surface temperatures in the range of 453 513 K, and 120 Torr oxyhydrogen environment with 15 Torr H2. All the current components grow monotonously with temperature, while relative fraction of the hot electron current decreases with temperature from 85 to 52%
author_names: Mohammad A Hashemian

Suhas Kiran K Dasari

Eduard G Karpov
title: Separation of hot electron current component induced by hydrogen oxidation on resistively heated Pt/n GaP Schottky nanostructures
year: 2013

abstract: The present invention discloses an electric blasting Schottky junction transducer element, the transducer element electric blasting comprising: a silicon substrate, SiO2 insulating layer, metal aluminum layer, the Schottky junction layer bridge; the present invention with now as compared to prior art, which is a significant advantage in that each of the Schottky junction has a certain breakdown voltage, the excitation energy transducer element controlled by controlling the amount of the Schottky junction; Schottky junction having a reverse breakdown characteristics, so that the transducer element is resistant to stray current, with security nature; of Al and CuO redox reaction to occur, to achieve output energy transducer element is increased.
title: Schottky junction explosive electric transducer component and manufacturing method thereof
year: 2013

abstract: We have proposed a method of surface passivation with high temperature atomic layer deposited (ALD) Al2O3 layer on the fully recessed anode AlGaN/GaN based Schottky barrier diode (SBD) and systematically analyzed the cause of the lateral and the vertical leakage component in the SBD. The forward turn on voltage of the recessed SBD decreased to 0.38 V from the value of 0.8 V of the nonrecessed SBD due to the lowered barrier height. Application of the ALD Al2O3 surface passivation layer to the recessed SBD, which was deposited at higher temperature (550 degC) significantly improved the performances of the proposed SBD such as high on current of 12 A at 1.5 V and increased breakdown voltage of 780 V with greatly decreased reverse leakage current (at least 3 orders lower in magnitude) compared to the corresponding on current of 6 A at 1.5 V and breakdown voltage of 510 V of the reference SBD.
author_names: Jae-Hoon Lee

Ki-Sik Im

Jong Kyu Kim

Jung-Hee Lee
title: Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High Temperature Atomic Layer Deposited Al2O3 Layer
venue: IEEE Transactions on Electron Devices
year: 2019

abstract: We fabricate Schottky contact photodetectors based on electrically contacted Au nanoantennas on p Si for the plasmonic detection of sub bandgap photons in the optical communications wavelength range. Based on a physical model for the internal photoemission of hot carriers, photons coupled onto the Au nanoantennas excite resonant plasmons, which decay into energetic "hot" holes emitted over the Schottky barrier at the Au/p Si interface, resulting in a photocurrent. In our device, the active Schottky area consists of Au/p Si contact and is very small, whereas the probing pad for external electrical interconnection is larger but consists of Au/Ti/p Si contact having a comparatively higher Schottky barrier, thus producing negligible photo and dark currents. We describe fabrication that involves an electron beam lithography step overlaid with photolithography. This highly compact component is very promising for applications in high density Si photonics.
author_names: Mohammad Alavi-Rad

A Olivieri

Langis Roy

Pierre Berini
title: Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon
year: 2018

abstract: A comprehensive study of the breakdown voltage optimization of trench MOS barrier Schottky (TMBS) rectifiers is performed by means of drift diffusion simulations. First, the principles of operation are explained in terms of the charge sharing effect between the Schottky and trench MOS components of the unit cell, and correlated with the profiles of the electric field along the drift region <inline formula> <tex math notation="LaTeX"{E}_{\textsf {Sch} /tex math>/inline formula> and the MOS capacitor <inline formula> <tex math notation="LaTeX"{E}_{\textsf {TMOS} /tex math>/inline formula> Then, the systematic variation of relevant design parameters is used to determine breakdown voltage and leakage current trends, which are analyzed in terms of the electric field. Our results show that <inline formula> <tex math notation="LaTeX"{E}_{\textsf {Sch} /tex math>/inline formula> is the dominating component in structures with thick oxides, shallow trenches, or high doping concentrations, whereas <inline formula> <tex math notation="LaTeX"{E}_{\textsf {TMOS} /tex math>/inline formula> is the limiting factor for devices with thin oxides, deep trenches, or low doping. Finally, optimum <inline formula> <tex math notation="LaTeX"\textit {BV} /tex math>/inline formula> is found when the peak value of <inline formula> <tex math notation="LaTeX"{E}_{\textsf {Sch} /tex math>/inline formula> and <inline formula> <tex math notation="LaTeX"{E}_{\textsf {TMOS} /tex math>/inline formula> is approximately the same, and this condition can be reached in a wide range of trench depths for devices with long drift regions and high doping, but in a very narrow window for thin epi layers or low doping concentration.
author_names: Alvaro D Latorre-Rey

Mihir Mudholkar

Mohammed Tanvir Quddus
title: Physics Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers
venue: IEEE Transactions on Electron Devices
year: 2018

abstract: Abstract Owing to fascinating optical and electronic properties, graphene has attracted significant attention as an active component in energy harvesting. Steady advances have been achieved in last decade on the hybrid graphene/silicon Schottky solar cells that are based on an unconventional Schottky structured junction. In this brief review, we outlined the device physics and technical strategies devised to improve the power conversion efficiency of the hybrid graphene/silicon Schottky solar cells. The research results accumulated in the graphene/silicon prototype are expected to promote the low cost solar cells.
author_names: Shihao Ju

Binxi Liang

Junzhuan Wang

Yi Shi

Songlin Li
title: Graphene/silicon Schottky solar cells: Technical strategies for performance optimization
year: 2018

abstract: In this paper, we investigate the presence of minority carriers and their role in charge carrier transport in silicon (Si) Schottky diodes with a high potential barrier. Using TCAD simulations along with an analytical model, we show that an inversion charge is induced at the metal semiconductor (MS) interface in a high barrier Schottky diode which imparts bipolar type current characteristics to otherwise a unipolar Schottky diode, even at low injection operation. In such a high barrier diode, minority diffusion also becomes important along with the majority carrier thermionic emission and therefore cannot be neglected, unlike in a conventional Schottky diode. The presence of minority carriers at low injection in a high barrier Si Schottky diode has been experimentally verified via a prior reported two diode electrical test method, reverse recovery measurements, and by measuring infrared electroluminescence. It is also shown, via TCAD simulations, that the diffusion component becomes more pronounced in case of a reduced Gummel number and at elevated temperatures.
author_names: Gaurav Gupta

Satadal Dutta

Souri Banerjee

Raymond J E Hueting
title: Minority Carrier Injection in High Barrier Si Schottky Diodes
venue: IEEE Transactions on Electron Devices
year: 2018

abstract: Electrical characteristics of leakage current paths in vertical type n GaN Schottky barrier diodes (SBDs) on free standing GaN substrates are investigated by using photon emission microscopy (PEM) The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current voltage characteristics.
author_names: Liwen Sang

B Ren

Masatomo Sumiya

Meiyong Liao

Yasuo Koide

Atsushi Tanaka

Yujin Cho

Y Harada

Toshihide Nabatame

Takashi Sekiguchi

Shigeyoshi Usami

Yoshio Honda

Hiroshi Amano
title: Initial leakage current paths in the vertical type GaN on GaN Schottky barrier diodes
year: 2017