Query: High-temperature Ultraviolet Photodetectors: A Review

Candidate papers:

abstract: Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short wavelengths (i.e. ultraviolet, UV) in high temperature regions (up to 300degC) The main driver for the development of high temperature UV detection instrumentation is in situ monitoring of hostile environments and processes found within industrial, automotive, aerospace, and energy production systems that emit UV signatures. In this review, a summary of the optical performance (in terms of photocurrent to dark current ratio, responsivity, quantum efficiency, and response time) and uncooled, high temperature characterization of III nitride, SiC, and other wide bandgap semiconductor UV photodetectors is presented.
author_names: Ruth A Miller

Hongyun So

Thomas Heuser

Debbie G Senesky
title: High temperature Ultraviolet Photodetectors: A Review
year: 2018

abstract: In recent years, solar blind ultraviolet (UV) photodetectors have attracted significant attention from researchers in the field of semiconductor devices due to their indispensable properties in the fields of high temperature event monitoring, anti terrorism, security and ad hoc network communication. As an important member of the third generation semiconductors, b Ga2O3 is considered to be one of the most promising candidates for solar blind UV detectors due to its ultra wide band gap ~4.9 eV) economic efficiency, high radiation resistance and excellent chemical and thermal stability. Herein, we provide a comprehensive review on Ga2O3 based solar blind UV photodetectors, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade. We classify the currently reported Ga2O3 based solar blind UV photodetectors (mainly including photoconductive detectors, heterogeneous PN junction detectors and Schottky junction detectors) and summarize their respective superiorities and potentials for improvement. Finally, considering the actual application requirements, we put forward some meaningful suggestions, including energy band engineering and homogeneous epitaxy, for the future development of Ga2O3 material growth and device manufacturing.
author_names: Jingjing Xu

Wei Zheng

Feng Huang
title: Gallium oxide solar blind ultraviolet photodetectors: a review
year: 2019

abstract: Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one dimensional (1D) nanostructure semiconductors with a wide bandgap, such as b Ga2O3, GaN, ZnO, or other metal oxide nanostructures, also show their potential for high efficiency UV photodetection. In some cases such as flame detection, high temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state of the art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.
author_names: Liwen Sang

Meiyong Liao

Masatomo Sumiya
title: A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One Dimensional Nanostructures
venue: Sensors
year: 2013

abstract: The objective of this chapter is to provide a concise review of the growth, characterization and properties of the nanorods and nanowires in two nitrides systems: the group III nitrides (specifically, AlN, GaN, InN and ternary Ga In N) and group IV nitrides (Si3N4 and ternary Si C N) During the last three decades, tremendous efforts have been devoted to the physics, chemistry and synthesis of GaN and related materials. The wurtzite polytypes of AlN, GaN and InN form a nearly continuous alloy system with direct band gaps between 1.9 and 6.2 eV, therefore, suitable for optoelectronic devices that are active at wavelengths ranging from the green well into the ultraviolet. In fact, all primary and mixed colors can be obtained by using nitride emitters as pumps. Progress in III nitride based devices has been made at an astonishing rate in the last decade [1] Besides the applications of III nitrides in light emitting diodes and laser diodes, high speed field effect transistors, ultraviolet photodetectors and high temperature electronic devices have been demonstrated [2 4] Furthermore, GaN is also chemically inert and radiation resistant and has been considered as a stable photocatalyst in photo electrochemical fuel cells [5] while InN/Si tandem cells have been proposed for high efficiency solar cells [6, 7] Of equal importance to just being an active component of the nitride optoelectronic devices, AlN has also attracted extensive interest for applications as electrical packaging material due to its high thermal conductivity and low coefficient of thermal expansion that closely matches that of silicon, and as components in structural composites owing to its excellent mechanical strength and chemical stability [8]
author_names: Li-Chyong Chen

Kuei-Hsien Chen

Chia-Chun Chen
title: Group III and Group IV Nitride Nanorods and Nanowires
year: 2003

abstract: The III V GaN based materials are being comprehensively investigated recently for its potential as ultraviolet photodetectors as well as light emitting devices,high temperature and high power electronic devices.Low resistance ohmic contacts are essential for improving the electrical and optical performance of GaN based devices.Low resistance contacts to p GaN are difficult to fabricate in part due to the low doping and hole ionization.Development of stable ohmic contacts on p GaN continues to be a challenge.By summering and analyzing of related papers published on English periodicals in recent years,this review focuses on the developments in improved p GaN processes and the current state of the art in contact performance.
author_names: Tang Li-bin
title: Developments of Ohmic Contacts of p Type GaN devices
year: 2009

abstract: We report fully aerosol jet printed ultraviolet photodetectors based on zinc oxide nanocrystal networks having a porous morphology. The developed photodetectors exhibit selective optical photoresponse in the ultraviolet spectrum at wavelengths ranging from 250 nm up to 400 nm. These devices show a high ON/OFF ratio of ~106 and short response times. The characteristic time constants for the rise and fall edges were measured to be ~0.4 and ~1.3 s, respectively. In this work, we propose a direct approach for aerosol jet printing of presynthesized nanocrystals to overcome the limitations of high post annealing temperatures and tedious fabrication methods to obtain high aspect ratio nanostructures. The high performance characteristics of these devices are attributed to Schottky barrier modification under the influence of oxygen, which is enhanced by the porosity of the semiconductor material. The random orientation of the crystals aids the formation of air traps in the network, thereby enhancing the surface ar.
author_names: Anubha A Gupta

Shivaram Arunachalam

Sylvain G Cloutier

Ricardo Izquierdo
title: Fully aerosol jet printed, high performance nanoporous ZnO ultraviolet photodetectors
year: 2018

abstract: Ultraviolet (UV) photodetectors (PDs) as pivotal elements in modern optoelectronic devices, have attracted increasing research interest in recent years because of their wide applications both in civil and military fields such as confidential space communication, flame detection, imaging, and missile warning systems. Gallium oxide is a desirable candidate for deep UV photodetection due to its suitable ultrawide bandgap 4.5 to 4.9 eV) without the necessity of alloying process. It is reported that crystalline gallium oxide has five phases (a, b, g, d and e) and b phase is the most stable. Many kinds of crystalline gallium oxide UV PDs including bulk, thin films, and nanostructures have been demonstrated and summarized in several review articles recently. According to common understanding of semiconductors, properties of crystalline materials with limited defects are usually superior compared with their amorphous counterparts. For example, the performance of solar cells or transistors using crystalline Si is better than amorphous ones because the carrier mobility of crystalline Si is about 200 cm V 1 s which is much higher than the value of amorphous Si 1 cm V 1 s However, things have been changed in 2004, since the first report of high performance flexible thin film transistors (TFTs) based on amorphous InGaZnO (a IGZO) a transparent amorphous oxide semiconductor (TAOS) with electron mobility as high as 10 cm V 1 s From then on, TAOS TFTs as well as the fundamental material science have been extensively investigated and now they are being used in commercial large area flat panel displays. According to previous researches related with a IGZO, Ga element is a necessary stabilizer in the amorphous structure since gallium oxide will not crystallize unless the substrate temperature is higher enough, whereas indium oxide and zinc oxide tend to crystallize readily even at room temperature (RT) It indicates amorphous gallium oxide (a GaOx) could be realized more easily compared with indium oxide and zinc oxide. As a matter of fact, a GaOx has also attracted a great deal of attention due to its wide bandgap and high breakdown field strength. At the earlier stage, a GaOx thin films were mainly used as a dielectric layer or a passivation layer in microelectronic devices and solar cells. In 2017, three groups reported solar blind UV PDs using a GaOx thin films almost simultaneously. It is quite interesting that the performance of UV PD using a GaOx is comparable or even better than its crystalline counterpart. Except for UV PDs, a GaOx materials also have extensive applications in areas of solar cells, phosphors, resistance random access memories (RRAMs) gas sensors, and radiation detectors. These versatile applications together with the fact that scalable a GaOx can be easily prepared on almost any substrates make it appealing for flexible electronics and giant microelectronics. Great attention has been paid to this cost effective material, evidenced by the increased number of publications retrieved with the key word of "amorphous Ga2O3," as shown in Figure 1. To further understand the material properties of a GaOx and construct superior UV PDs, it is necessary to summarize the progresses on a GaOx materials and devices. In this Review, we will Dr. H. Liang, Z. Han, Prof. Z. Mei Songshan Lake Materials Laboratory Dongguan, Guangdong 523808, China E mail: hlliang@iphy.ac.cn; zxmei@iphy.ac.cn Dr. H. Liang, Z. Han, Prof. Z. Mei Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190, China Z. Han School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049, China
author_names: Huili Liang

Zuyin Han

Zengxia Mei
title: Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films
venue: physica status solidi (a)
year: 2020

abstract: Quantum dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high temperature, low cost, high yield detector arrays required for military applications. High operating temperature (150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo electric coolers. QDIPs are well suited for detecting mid IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot non uniformity remains as a significant challenge. Nonetheless, state of the art mid IR detection at 150 K has been demonstrated using 70 layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g. controlling dopant incorporation) exploring alternative QD systems (e.g. colloidal QDs) and using bandgap engineering to reduce dark current and enhance multi spectral detection (e.g. resonant tunneling QDIPs) the performance and applicability of QDIPs will continue to improve.
author_names: Adrienne D Stiff-Roberts
title: Quantum dot infrared photodetectors: a review
year: 2009

abstract: This work demonstrates the high temperature operation of metal semiconductor metal (MSM) photodetectors (PDs) up to 450 degC using lightly Al doped epitaxial 4H SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.0305 A/W at 20 V bias at room temperature. The photocurrentto dark current ratio of the SiC MSM PDs is as high as 1.3 x 10<sup>5</sup> at 25 degC and is 0.62 at 450 degC. The rise/fall time of the PDs is increased slightly from 594 ms/684 ms to 684 ms/786 ms as the temperature increases from room temperature to 400 degC. These results support the use of 4H SiC PDs in extremely high temperature applications.
author_names: Wei-Cheng Lien

Dung-Sheng Tsai

Der-Hsien Lien

Debbie G Senesky

Hau He

Albert P Pisano
title: 4H SiC Metal Semiconductor Metal Ultraviolet Photodetectors in Operation of 450 \circ}\hbox{C}
venue: IEEE Electron Device Letters
year: 2012

abstract: This work demonstrates the high temperature operation of metal semiconductor metal (MSM) photodetectors (PDs) up to 450 *C using lightly Al doped epitaxial 4H SiC thin films. The responsivity of the PDs under 325 nm illumination is 0.0305 A/W at 20 V bias at room temperature. The photocurrentto dark current ratio of the SiC MSM PDs is as high as 1.3 x 10 at 25 *C and is 0.62 at 450 *C. The rise/fall time of the PDs is increased slightly from 594 ms/684 ms to 684 ms/786 ms as the temperature increases from room temperature to 400 *C. These results support the use of 4H SiC PDs in extremely high temperature applications.
author_names: Wei-Cheng Lien

Dung-Sheng Tsai

Der-Hsien Lien

Debbie G Senesky

- Hau He

Albert P Pisano
title: SiC Metal Semiconductor Metal Ultraviolet Photodetectors in Operation of 450 C
year: 2012