Query: GaN mesfet model

Candidate papers:

abstract: This paper presents a new model to study the static performances of a GaN metal epitaxial semiconductor field effect transistor (MESFET) based on the metal semiconductor interface state of the Schottky junction. The I V performances of MESFET under different channel lengths and different operating systems (pinch off or not) have been achieved by our model, which strictly depended on the electrical parameters, such as the drain gate capacity Cgd, the source gate capacity Cgs, the transconductance, and the conductance. To determine the accuracy of our model, root mean square (RMS) errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut off frequency for the GaN MESFET.
author_names: Xiaohong Li

Ruirong Wang

Tong Chen
title: Static performance model of GaN MESFET based on the interface state
year: 2018

abstract: A new two dimensional (2D) analytical model for a Triple Material Gate (TM) GaN MESFET has been proposed and modeled to suppress the short channel effects and improve the subthreshold behavior. The analytical model is based on a two dimensional analysis of the channel potential, threshold voltage and subthreshold swing factor for TM GaN MESFET is developed. The aim of this work is to demonstrate the improved subthreshold electrical performances exhibited by TM GaN MESFET over dual material gate and conventional single material gate MESFET. The results so obtained are verified and validated by the good agreement found with the 2D numerical simulations using the ATLAS device simulation software. The models developed in this paper will be very helpful to understand the device behavior in subthreshold regime for future circuit applications.
author_names: N Lakhdar

Faycal Djeffal
title: A new two dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
year: 2014

author_names: S Nagaraj

Ramin Roosta

Robert D Conner
title: CALIFORNIA STATE UNIVERSITY NORTHRIDGE Analytical Model of GaN MESFET's With Velocity Saturation and Negative Differential Resistance A graduate project submitted in fulfillment of the requirements For the degree of Master of Science in Electrical Engineering By
year: 2015

author_names: S Nagaraj
title: Analytical Model of GaN MESFET's With Velocity Saturation and Negative Differential Resistance
year: 2015

author_names: N Lakhdar
title: Erratum to: A new two dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
year: 2014

abstract: A two dimensional (2D) analytical model is derived in this paper to predict the channel potential of MESFET. The model is based on two dimensional analytical solution of Poisson's equation with suitable boundary conditions. The analytical result is obtained and verified for GaN MESFET. The result of analytical model is almost similar to the simulation result obtained by Comsol Multiphysics. The variation of channel potential with respect to gate to source voltage, drain to source voltage and channel length is also shown. This model can be used for further device characterization and optimization.
author_names: Tanvir Ahmed

M T A Khan

M S Islam
title: Two dimensional analytical potential distribution model for GaN MESFET
venue: 2012 International Conference on Devices, Circuits and Systems (ICDCS)
year: 2012

author_names: Divakar Vedati
title: An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET's
year: 2013

author_names: Ankithreddy Sudini
title: A capacitance model for Gallium Nitride (GaN) MESFET with a new concept of charge conversion
year: 2013

abstract: A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I V characteristics of the device over a wide bias and ambient temperature range (from i70 C to +70 C) without the need of an additional electro thermal sub circuit. This is an important issue in high power GaN HEMT devices where self heating and current collapse due to traps is a more serious problem. The parameter extraction strategy of the new model is simple to implement. The robustness of the model when performing harmonic balance simulation makes it suitable for RF and microwave designers. Experimental results presented demonstrate the accuracy of the model when simulating both the small signal and large signal behavior of the device over a wide range of frequency, bias and ambient temperature operating points. The model described has been implemented in the Advanced Design System (ADS) simulator to validate the proposed approach without convergence problems.
author_names: Mohamed Chaibi

T Fernandez

Asmae Mimouni

J Rodriguez-Tellez

Antonio Tazon

Angel Mediavilla Sanchez
title: Nonlinear Modeling of Trapping and Thermal Effects on GaAs and GaN Mesfet/HEMT Devices
year: 2012

abstract: A physical analytical model is developed for the output current voltage characteristics and for describing the behavior of electrons in sub micron GaN MESFET's. A semi empirical formula has been proposed to approximate the electron drift velocity versus electric field in GaN by fitting it with the Monte Carlo simulation data. It gives a true physical description and an excellent approximation of the velocity field dependence in GaN revealing the presence of a velocity peak which is substantially higher than the saturation velocity at temperature close to 300 K and at typical doping concentration of 1017/cm3. The resulting I V curves are in excellent agreement with the experimental data. (c) 2006 WILEY VCH Verlag GmbH Co. KGaA, Weinheim)
author_names: Sneha Kabra

Harsupreet Kaur

Subhasis Haldar

Mridula Gupta

R S Gupta
title: An analytical model for GaN MESFET's using new velocity field dependence
year: 2006