Query: silicon photonics 2D materials applications

Candidate papers:

abstract: In the growing list of 2D semiconductors as potential successors to silicon in future devices, metal halide perovskites have recently joined the family. Unlike other conversional 2D covalent semiconductors such as graphene, transition metal dichalcogenides, black phosphorus, etc. 2D perovskites are ionic materials, affording many distinct properties of their own, including high photoluminescence quantum efficiency, balanced large exciton binding energy and oscillator strength, and long carrier diffusion length. These unique properties make 2D perovskites potential candidates for optoelectronic and photonic devices such as solar cells, light emitting diodes, photodetectors, nanolasers, waveguides, modulators, and so on, which represent a relatively new but exciting and rapidly expanding area of research. In this Review, the recent advances in emerging 2D metal halide perovskites and their applications in the fields of optoelectronics and photonics are summarized and insights into the future direction of these fields are offered.
author_names: Xiang Qi

Yupeng Zhang

Qingdong Ou

Son Tung Ha

C -W Qiu

Han Zhang

Yi-Bing Cheng

Qihua Xiong

Qiaoliang Bao
title: Photonics and Optoelectronics of 2D Metal Halide Perovskites.
venue: Small
year: 2018

abstract: 2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g. electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g. mixed dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.
author_names: Anton Autere

Henri Jussila

Yunyun Dai

Yadong Wang

Harri Lipsanen

Zhipei Sun
title: Nonlinear Optics with 2D Layered Materials.
venue: Advanced materials
year: 2018

abstract: Abstract Silicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon based photodetectors with 2D materials for the wavelength bands from ultraviolet (UV) to mid infrared (MIR) The other is silicon photonic switches/modulators with 2D materials, including high speed electro optical modulators, high efficiency thermal optical switches and low threshold all optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.
author_names: Jiang Li

Chaoyue Liu

Hai-yan Chen

Jingshu Guo

Ming Zhang

Daoxin Dai
title: Hybrid silicon photonic devices with two dimensional materials
year: 2020

abstract: We have reported the first room temperature nanocavity laser with interlayer excitons in 2D heterostructures. Atomically thin layered two dimensional (2D) materials have provided a rich library for both fundamental research and device applications. Bandgap engineering and controlled material response can be achieved from artificial heterostructures. Recently, excitonic lasers have been reported using transition metal dichalcogenides; however, the emission is still the intrinsic energy bandgap of the monolayers. Here, we report a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing was identified by the distinct kink in the "L L" curve and the noticeable spectral linewidth collapse. Different from visible emission of intralayer excitons in monolayer components, our laser works in the infrared range, which is fully compatible with the well established technologies in silicon photonics. Long lifetime of interlayer excitons relaxes the requirement of the cavity quality factor by orders of magnitude. Room temperature interlayer exciton lasers might open new perspectives for developing coherent light sources with tailored optical properties on silicon photonics platforms.
author_names: Yuanda Liu

Hanlin Fang

Abdullah Rasmita

Yu Zhou

Juntao Li

Ting Yu

Qihua Xiong

Nikolay I Zheludev

Jin Liu

Weibo Gao
title: Room temperature nanocavity laser with interlayer excitons in 2D heterostructures
venue: Science Advances
year: 2019

abstract: Two dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field effect transistors. Their high mechanical flexibility, stability, and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light emitting diodes based on vertical heterojunctions composed of n type monolayer MoS2 and p type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our p n diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4% Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of 2D semiconductors and silicon.
author_names: Oriol Lopez-Sanchez

Esther Alarcon Llado

Volodymyr B Koman

Anna Fontcuberta i Morral

Aleksandra Radenovic

Andras Kis
title: Light Generation and Harvesting in a van der Waals Heterostructure
venue: ACS nano
year: 2014

abstract: Integrated circuits based on complementary metal oxide semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300 2,000 nm) The demonstrated graphene CMOS integration is pivotal for incorporating 2D materials into the next generation microelectronics, sensor arrays, low power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies. Graphene quantum dots on CMOS sensor offers broadband imaging.
author_names: Stijn Goossens

Gabriele Navickaite

Carles Monasterio

Shuchi Gupta

Juan Piqueras

Raul Perez

Gregory Burwell

Ivan Nikitskiy

Tania Lasanta

Teresa Gal'an

Eric Puma

Alba Centeno

Amaia Pesquera

Amaia Zurutuza

Gerasimos Konstantatos

Frank H L Koppens
title: Broadband image sensor array based on graphene CMOS integration
year: 2017

abstract: Graphene has emerged as an ultrafast optoelectronic material for on chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only \sim$2.3\ of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS incompatible devices, depending on the choice of metal. Here, we propose a plasmon enhanced photothermoelectric graphene photodetector using CMOS compatible titanium nitride (TiN) on the silicon on insulator (SOI) platform. The device performance is compared for two substrate materials: SiO$_{2} and hexagonal boron nitride (hBN) We find out that the thermoelectric performance of graphene is enhanced by hBN, but this enhancement comes at the expense of a slower device speed. Moreover, our study reveals that the bandwidth of the graphene on SiO$_{2} photodetector has a \sim$150$$GHz theoretical limit, and \sim\$65$$GHz for the graphene on hBN photodetector. The device presented in this study has a high speed response with a responsivity as high as 4.4$$A/W for an ultra compact length of 3.5$\mu$m, and exhibits a nearly flat photoresponse across the telecom C band. Furthermore, the presented device operates at zero bias, consumes zero energy, and has an ultra low intrinsic noise equivalent power (NEP$,25\\text{pW/\sqrt{\text{Hz}
author_names: Mohammed AlAloul

Mahmoud S Rasras
title: Plasmon enhanced graphene photodetector with CMOS compatible titanium nitride
year: 2020

abstract: We demonstrate the first achievement of continuous wave (CW) pumped second harmonic generation (SHG) in few and mono layer gallium selenide (GaSe) flakes, which are coated on silicon photonic crystal (PC) cavities. Because of ultrahigh second order nonlinearity of the two dimensional (2D) GaSe and localized resonant mode in the PC cavity, SHG's pump power is greatly reduced to microwatts. In a nine layer GaSe coated PC cavity, while the optical power inside the GaSe flake is only 1.5% of that in the silicon PC slab, the SHG in GaSe is more than 650 times stronger than the third harmonic generation in silicon slab, indicating 2D GaSe's great potentials to strengthen nonlinear processes in silicon photonics. Our study opens up a new view to expand 2D materials' optoelectronic applications in nonlinear regime and chip integrated active devices.
author_names: Xuetao Gan

Chenyang Zhao

Siyi Hu

Tao Wang

Yu Song

Jie Li

Qinghua Zhao

Wanqi Jie

Jianlin Zhao
title: Microwatts continuous wave pumped second harmonic generation in few and mono layer GaSe
venue: Light, science applications
year: 2018

abstract: Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p and n type semiconductors is essential for various device applications, such as complementary metal oxide semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4 nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field effect transistors (FETs) to p and n type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V 1 s 1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2 The doping effects are studied by photoluminescence, Raman, X ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (0.17 nW) Furthermore, a p n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC based advanced electronics.
author_names: Hyun Goo Ji

Pablo Solis-Fernandez

Daisuke Yoshimura

Mina Maruyama

Takahiko Endo

Yasumitsu Miyata

Susumu Okada

Hiroki Ago
title: Chemically Tuned p and n Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics.
venue: Advanced materials
year: 2019

abstract: We report a new approach for realizing a flexible photonic crystal (PC) cavity that enables wide range tuning of its resonance frequency. Our PC cavity consists of a regular array of silicon nanowires embedded in a polydimethylsiloxane (PDMS) matrix and exhibits a cavity resonance in the telecommunication band that can be reversibly tuned over 60 nm via mechanical stretching a record for two dimensional (2D) PC structures. These mechanically reconfigurable devices could find potential applications in integrated photonics, sensing in biological systems, and smart materials.
author_names: Chun Liang Yu

Hyunwoo Kim

Nathalie P de Leon

Ian W Frank

Jacob T Robinson

Murray William McCutcheon

Mingzhao Liu

Mikhail D Lukin

Marko Loncar

Hongkun Park
title: Stretchable photonic crystal cavity with wide frequency tunability.
venue: Nano letters
year: 2013