Query: High-speed, efficient metal semiconductor metal photodetectors

Candidate papers:

abstract: Design principles and the fabrication technique of highly efficient, high speed photodetectors based on MSM nanostructures are developed. To efficiently confine light in the region of the strong field as well as to decrease light losses due to reflection from the diode contacts, use is made of a nanoscale interdigital diffraction grating and a multilayer Bragg grating. Measurements of the reflection coefficients and the quantum efficiency for a multilayer structure are in good agreement with theoretical estimates. A record high quantum efficiency (QE 46 is obtained for high speed MSM photodetectors. The detector has a high spectral selectivity (Dl1/2 17 nm) at a wavelength of 800 nm. Taking into account the diode capacitance and the drift time of photogenerated carriers, the performance of the detectors under study is 500 GHz. The low level of the dark current density in the structures under study (j="1" pA mm 2) makes it possible to realise on their basis highly sensitive, high speed selective detectors of optical radiation.
author_names: Stephane Collin

Fabrice Pardo

Stanislav Averin

Nathalie Bardou

Jean-luc Pelouard
title: High speed, efficient metal semiconductor metal photodetectors
year: 2010

abstract: A silicon metal semiconductor metal photodetector with high efficiency and high speed in the infrared is reported. The high performance is achieved by using a Si on insulator substrate with a patterned nanometer scale scattering reflector buried underneath a 170 nm thick Si active layer. This scattering reflector causes light to be trapped inside the thin Si active layer, resulting in a fast and efficient carrier collection by the electrodes. The impulse response of the photodetector, measured by electro optic sampling at 780 nm wavelength, has a full width at half maximum of 5.4 ps, corresponding to a 3 dB bandwidth of 82 GHz. At both 633 and 850 nm wavelengths, the responsivities of the photodetector with the buried backside reflector are at least an order of magnitude larger than those without the reflector.
author_names: Erli Chen

Stephen Y Chou
title: High efficiency and high speed silicon metal semiconductor metal photodetectors operating in the infrared
year: 1997

abstract: We report the fabrication and characterization of lateral metal semiconductor metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15 V bias, an efficient photoresponse up to 1.6 mm, and a fast deconvoluted full width at half maximum response of about 25 ps at 12 V bias.
author_names: Nacer Amara Debbar

Alok P Rudra

J-F Carlin

Marc Ilegems
title: High speed InP/GaInAs metal semiconductor metal photodetectors grown by chemical beam epitaxy
year: 1994

abstract: The finger sizing of interdigitated Schottky barrier metal semiconductor metal photodetectors (MSM PD) is discussed in this paper. We observe that a MSM PD geometry with fast response speed can be determined by solving a special form of optimization problem called posynomial programming, for which very efficient global optimization methods have been developed. Our method, therefore, yields completely automated finger sizing of MSM PD, directly from specifications.
author_names: Kan-Lin Hsiung
title: Design of high speed metal semiconductor metal photodetectors: an optimization based approach
venue: Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)
year: 2006

abstract: We report Si metal semiconductor metal photodetectors with high efficiency and high speed in the infrared using Si on insulator substrates with backside reflectors buried underneath a deep submicron thick active layer. The reflectors cause the trapping of the light inside the thin Si active layer, resulting in a fast and efficient carrier collection by the electrodes. The impulse response of the photodetector, measured by electro optic sampling at 780 nm wavelength, has a full width at half maximum of 5.4 ps, corresponding to a 3 dB bandwidth of 82 GHz. At both 633 and 850 nm wavelengths, the responsivities of the photodetectors with the buried backside reflectors are at least an order of magnitude larger than that of those without the reflectors.
author_names: Erli Chen

Stephen Y Chou
title: High efficiency and high speed metal semiconductor metal photodetectors on Si on insulator substrates with buried backside reflectors
venue: Photonics West
year: 1997

abstract: Interdigitated metal semiconductor metal (MSM) photodetectors based on InAlAs/InGaAs materials have received considerable attention for applications in high speed optical fiber communication systems which require efficient light detection in the 1.3 1.55 um range. The performance of thin film inverted MSM are analyzed and compared to conventional MSM, that was modeled and simulated using Silvaco TCAD (Technology Computer Aided Design) and ATLAS software. We show how the interdigital spacing and thickness of the InGaAs layer influence the impulse response and the associated bandwidth
author_names: S Benzeghda

F Hobar
title: Three Dimensional Simulation of Metal Semiconductor Metal Photodetectors Based InAlAs/InGaAs
year: 2013

abstract: Silicon photonics, the art of achieving photonic functions on the Si based platform, have been regarded as the most feasible solution for the growing request on data transmission, particularly in data center and high performance computing applications. Higher bandwidth, lower cross talk, lower latency and lower power consumption are major advantages over the conventional metal interconnects. Consisting of a III V epi bonded onto the Silicon on insulator (SOI) substrate, the III V on Si platform has gained a lot of interest due to its practical solution to combine the desirable electrical and passive optical properties of Si and active optical properties of III V. It is also compatible with Si metal oxide semiconductor (MOS) structure, which makes it promising for mass production. In this talk, we will review our recent work on the two critical components for an efficient hybrid transceiver, i.e. ring lasers with unprecedentedly low tuning power, and photodetectors with high speed, high responsivity, and low leakage current optimized at the same time.
author_names: Xue Huang

Geza Kurczveil

Di Liang

Marco Fiorentino

Raymond G Beausoleil
title: Ring lasers and photodetectors on the hybrid III V on Si platform
venue: 2016 Progress in Electromagnetic Research Symposium (PIERS)
year: 2016

abstract: Silicon plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon plasmonic photodetection is based on internal photoemission (IPE) which exploits intrinsic absorption in plasmonic waveguides at the metal dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state of the art photodiodes while maintaining footprints below 1 mm2. The structures are based on asymmetric metal semiconductor metal waveguides with a width of less than 75 nm. We measure record high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto electronic bandwidths of at least 40 GHz. We demonstrate reception of on off keying data at rates of 40 Gbit/s.
author_names: S Muehlbrandt

Argishti Melikyan

Tobias Harter

K Kohnle

A Muslija

Paul Vincze

Stefan Wolf

P Jakobs

Yuriy Fedoryshyn

Wolfgang Freude

Juerg Leuthold

Christian Koos

Manfred Kohl
title: Silicon plasmonic internal photoemission detector for 40 Gbit/s data reception
year: 2016

abstract: Silicon photonics has attracted increasing attention and research effort in recent years because of its potential for low cost integration using existing complementary metal oxide semiconductor technology. One motivation for research on silicon photonics has been its potential application in energy efficient high speed optical interconnects for computing systems, particularly in circumstances where large power dissipation from electrical interconnects will limit performance. The high density integration of photonic devices, the wide availability of fabrication facilities and the potential for monolithic integration with electronic circuits offer the prospect for future low cost, reliable and energy efficient silicon photonic devices suitable for applications in computing, communications and sensing. Herein we review recent progress in the engineering of new devices and functional elements in silicon photonics, including low loss waveguides, passive integrated devices, integrated lasers, modulators, photodetectors and fiber chip coupling techniques. We also identify some emerging opportunities with potential for future development, such as mid infrared silicon photonics and optomechanical devices, and summarize some current trends, including the development of photonic devices based on amorphous silicon and the use of foundries for silicon photonic device fabrication.
author_names: Xia Chen

Chao Li

Hon Ki Tsang
title: Device engineering for silicon photonics
year: 2011

abstract: Metasurfaces constructed from metal nanostructures can operate as efficient coupling structures for incident optical beams to surface plasmons. On a semiconductor, metallic metasurfaces can act simultaneously as a device electrode while ensuring strong plasmon field overlap with the active region. Additionally, plasmon fields can be confined to subwavelength dimensions and significantly enhanced relative to the exciting field. These features are very attractive for nanoscale optoelectronic device applications, such as photodetectors and modulators, as the excitation of surface plasmons alters conventional trade offs between responsivity and speed, or modulation and speed, respectively. We discuss recent progress on optoelectronic metasurfaces, particularly device demonstrations for sub bandgap hot carrier photodetection and high speed modulation.
author_names: Pierre Berini
title: Optoelectronic metasurfaces: modulation and detection
venue: OPTO
year: 2018