Query: New dynamic multimode model for external cavity semiconductor lasers

Candidate papers:

abstract: A new, dynamic, time domain, numerical model for external cavity lasers, based on the transmission line laser model (TLLM) is introduced. This is able to show the evolution of spectra from large signal modulated devices, even when the modulation pulsewidth is less than the external cavity round trip delay. The model is demonstrated using short and long dispersionless cavities. Results in the time and spectral domains are in agreement with those of previous theoretical and experimental work.
author_names: Arthur James Lowery
title: New dynamic multimode model for external cavity semiconductor lasers
year: 1989

abstract: Long External Cavity Laser (L ECL) is a kind of new and promising type laser because of its dynamic single mode performance. In this paper, firstly, the theory model of L ECL is discussed; Secondly, the influence of coupling coefficient on the threshold gain of L ECL is studied based on equivalent external cavity theory; Thirdly, utilizing the theory of equivalent cavity length, combined rate equations, the high frequency response characteristic of L ECL is analyzed; Lastly, optical spectrums of L ECL on different grating peak reflectivity are obtained by experiment.
author_names: Chang Jian Qi

Tonggang Zhao
title: The Theory and Experimental Study on the Long External Cavity Semiconductor Lasers
year: 2014

abstract: We investigate the dynamical stability of external cavity semiconductor lasers with deliberate tilt asymmetries. Experimentally observed low frequency self pulsations are explained by small signal analysis based on a new rateequation model that uses a time dependent effective reflectivity to include multiple feedback effects. We observe and explain the dependence of the self pulsation frequency on the strength and degree of asymmetry of the feedback, on the injection current, and on the external cavity length. These results are important in interpreting instabilities, chaos, and other complex dynamical phenomena in external cavity semiconductor lasers.
author_names: J D Park

Dongsun Seo

John G McInerney

Gregory C Dente

Marek Osinski
title: Low frequency self pulsations in asymmetric external cavity semiconductor lasers due to multiple feedback effects.
venue: Optics letters
year: 1989

abstract: Vertical cavity surface emitting laser (VCSEL) constructions capable of direct modulation at bit rates in excess of 40 GBit/s have attracted considerable attention for future high speed long and medium haul networks. The two main approaches to realising this goal are, firstly, the improvement in the direct current modulation laser performance, with 40 GBit/s direct modulation having been demonstrated recently, and, secondly, using advanced modulation schemes. These, in turn, fall into two major categories: firstly, modulation of the photon lifetime in the cavity as an alternative to current modulation, and, secondly, current modulation enhanced by photon photon resonance in a specialised laser structure (e.g. using an external cavity [1] or a laser array [2] Theoretical models describing both of these solutions have been developed, but appear to have certain limitations which will be discussed later in the thesis, and no systematic analysis and comparison of modulation properties of advanced modulation scheme had been performed, to the best of my knowledge. This was the purpose of my PhD project. In order to understand the performance of the photon lifetime modulation for Compound Vertical Cavity Surface Emitting Semiconductor Lasers more accurately, a model involving careful analysis of both amplitude and frequency (phase) of laser emission, as well as the spectrally selective nature of the laser cavity, is required. We have developed such a model and used it to describe the laser operation and predict the performance beyond current experimental conditions in both large and small signal modulation regimes for the first time according to our knowledge. Finally, we studied the alternative method of ultrafast modulation of VCSELs, consisting of current modulation enhanced by photon photon resonance. The analysis concentrates on the version of the method involving an in plane integrated extended cavity. A new model is developed to overcome the limitations of existing models and to allow better understanding of the dynamic of the in plane laser cavity.
author_names: Fahad Albugami
title: Modelling and design of advanced high speed vertical cavity semiconductor lasers
year: 2017

abstract: Speckle formation is a limiting factor when using coherent sources for imaging and sensing, but can provide useful information about the motion of an object. Illumination sources with tunable spatial coherence are therefore desirable as they can offer both speckled and speckle free images. Efficient methods of coherence switching have been achieved with a solid state degenerate laser, and here we demonstrate a semiconductor based degenerate laser system that can be switched between a large number of mutually incoherent spatial modes and few mode operation. Our system is designed around a semiconductor gain element, and overcomes barriers presented by previous low spatial coherence lasers. The gain medium is an electrically pumped vertical external cavity surface emitting laser (VECSEL) with a large active area. The use of a degenerate external cavity enables either distributing the laser emission over a large ~1000) number of mutually incoherent spatial modes or concentrating emission to few modes by using a pinhole in the Fourier plane of the self imaging cavity. To demonstrate the unique potential of spatial coherence switching for multimodal biomedical imaging, we use both low and high spatial coherence light generated by our VECSEL based degenerate laser for imaging embryo heart function in Xenopus, an important animal model of heart disease. The low coherence illumination is used for high speed (100 frames per second) speckle free imaging of dynamic heart structure, while the high coherence emission is used for laser speckle contrast imaging of the blood flow.
author_names: Hui Cao

Sebastian Knitter

Changgeng Liu

Brandon Redding

Mustafa K Khokha

Michael A Choma
title: Coherence switching of a vertical cavity semiconductor laser for multimode biomedical imaging (Conference Presentation)
venue: BiOS
year: 2017

abstract: Laser technology is finding applications in areas such as high resolution spectroscopy, radar lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. Offering such performances in the Near and Middle IR range, GaAs and Sb based Vertical External Cavity Surface Emitting Laser (VeCSEL) technologies [1] seem to be a well suited path to meet the required specifications of demanding applications. Here, we report on the realization of industry ready packaged low noise single frequency VeCSEL devices emitting in the 0.8 1.1 um and 2 2.5 um spectral range with high performances thanks to a combination of power coherence wavelength tunability and compactness. A fundamental study of the non linear multimode laser dynamics was carried out to avoid dynamic phase amplitude instability. We demonstrate both experimentally and theoretically the existence of a deterministic dynamics of the laser field, with either a regular multimode non stationary regime, or a route to robust single frequency operation. Integration of flat photonics technology allows the realization of devices emitting new coherent light states (VORTEX or dual frequency lasers) for applications to optical tweezers or THz emission, for instance.
author_names: Baptiste Chomet

S Denet

V Lecocq

L Ferrieres

Mikhael Myara

Laurent Cerutti

Gregoire Beaudoin

Isabelle Sagnes

Arnaud Garnache
title: Industrial low noise tunable integrated semiconductor laser: dynamic instability and route to single frequency operation
venue: LASE
year: 2019

abstract: The optical feedback dynamics of two multimode InAs/GaAs quantum dot lasers emitting exclusively on sole ground or excited lasing states is investigated. The transition from longto short delay regimes is analyzed, while the boundaries associated to the birth of periodic and chaotic oscillations are unveiled to be a function of the external cavity length. The results show that depending on the initial lasing state, different routes to chaos are observed. These results are of importance for the development of isolator free transmitters in short reach networks. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: (140.5960) Semiconductor lasers; (250.0250) Optoelectronics; (190.3100) Instabilities and chaos. References and links 1. C. F. Lam, H. Liu, and R. Urata, "What devices do data centers need?" in Optical Fiber Communications Conference and Exhibition (OFC) of 2014 OSA Technical Digest Series (Optical Society of America, 2014) paper M2K.5. 2. Cisco white paper, "The Zettabyte Era: Trends and Analysis" (Cisco, 2016) 3. D. Bimberg, "Quantum dot based nanophotonics and nanoelectronics," Electron. Lett. 44, 390 (2008) 4. G. Eisenstein and D. Bimberg, eds. Green Photonics and Electronics (Springer, 2017) 5. M. T. Crowley, N. A. Naderi, H. Su, F. Grillot, and L. F. Lester, "GaAs Based Quantum Dot Lasers," in Advances in Semiconductor Lasers, J. J. Coleman, A. Bryce, and C. Jagadish, eds. (Academic Press, 2012) pp. 371 417 6. M. Grundmann, ed. Nano Optoelectronics, NanoScience and Technology (Springer, 2002) 7. K. Nishi, K. Takemasa, M. Sugawara, and Y. Arakawa, "Development of quantum dot lasers for data com and silicon photonics applications," IEEE J. Sel. Topics Quantum Electron. 23, 1 7 (2017) 8. A. Y. Liu, S. Srinivasan, J. Norman, A. C. Gossard, and J. E. Bowers, "Quantum dot lasers for silicon photonics," Photonics Res. 3, B1 (2015) 9. S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, "Electrically pumped continuous wave III V quantum dot lasers on silicon," Nat. Photonics 10, 307 311 (2016) 10. Ranovus Inc. "Ranovus announces availability of world's first quantum dot multi wavelength laser and silicon photonics platform technologies to create a new cost and power consumption paradigm for DCI market," (Ranovus, 2016) http:/ranovus.com/worlds first quantum dot multi wavelength laser and silicon photonics platformtechnologies for dci market/ 11. Y. Urino, N. Hatori, K. Mizutani, T. Usuki, J. Fujikata, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, "First demonstration of athermal silicon optical interposers with quantum dot lasers operating up to 125 *C," J. Lightw. Technol. 33, 1223 1229 (2015) 12. N. Zhuo, J. C. Zhang, F. J. Wang, Y. H. Liu, S. Q. Zhai, Y. Zhao, D. B. Wang, Z. W. Jia, Y. H. Zhou, L. J. Wang, J. Q. Liu, S. M. Liu, F. Q. Liu, Z. G.Wang, J. B. Khurgin, and G. Sun, "Room temperature continuous wave quantum dot cascade laser emitting at 7.2 mm," Opt. Express 25, 13807 13815 (2017) Vol. 26, No. 2 22 Jan 2018 OPTICS EXPRESS 1743 #318053 https:/doi.org/10.1364/OE.26.001743 Journal (c) 2018 Received 19 Dec 2017; accepted 8 Jan 2018; published 16 Jan 2018 13. A. Spott, E. J. Stanton, N. Volet, J. D. Peters, J. R. Meyer, and J. E. Bowers, "Heterogeneous integration for mid infrared silicon photonics," IEEE J. Sel. Top. Quantum Electron. 23, 1 10 (2017) 14. D. O'Brien, S. Hegarty, G. Huyet, J. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. Ustinov, A. Zhukov, S. Mikhrin, and A. Kovsh, "Feedback sensitivity of 1.3 mm InAs/GaAs quantum dot lasers," Electron. Lett. 39, 1819 (2003) 15. K. Mizutani, K. Yashiki, M. Kurihara, Y. Suzuki, Y. Hagihara, N. Hatori, T. Shimizu, Y. Urino, T. Nakamura, K. Kurata, and Y. Arakawa, "Optical I/O core transmitter with high tolerance to optical feedback using quantum dot laser," in 2015 European Conference on Optical Communication (ECOC) (2015) paper 0263. 16. D. Arsenijevic and D. Bimberg, "Quantum dot lasers for 35 gbit/s pulse amplitude modulation and 160 gbit/s differential quadrature phase shift keying," Proc. SPIE 9892, 9892 (2016) 17. C. Wang, B. Lingnau, K. Ludge, J. Even, and F. Grillot, "Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state," IEEE J. Quantum Electron. 50, 723 731 (2014) 18. Z. R. Lv, H. M. Ji, X. G. Yang, S. Luo, F. Gao, F. Xu, and T. Yang, "Large Signal Modulation Characteristics in the Transition regime for two state lasing quantum dot lasers," Chinese Phys. Lett. 33, 124204 (2016) 19. B. J. Stevens, D. T. D. Childs, H. Shahid, and R. A. Hogg, "Direct modulation of excited state quantum dot lasers," Appl. Phys. Lett. 95, 061101 (2009) 20. D. Arsenijevic, A. Schliwa, H. Schmeckebier, M. Stubenrauch, M. Spiegelberg, D. Bimberg, V. Mikhelashvili, and G. Eisenstein, "Comparison of dynamic properties of groundand excited state emission in p doped InAs/GaAs quantum dot lasers," Appl. Phys. Lett. 104, 181101 (2014) 21. F. Grillot, B. Dagens, J. G. Provost, H. Su, and L. F. Lester, "Gain compression and above threshold linewidth enhancement factor in 1.3 mm InAs GaAs quantum Dot lasers," IEEE J. Quantum Electron. 44, 946 951 (2008) 22. F. Zubov, M. Maximov, E. Moiseev, A. Savelyev, Y. Shernyakov, D. Livshits, N. Kryzhanovskaya, and A. Zhukov, "Observation of zero linewidth enhancement factor at excited state band in quantum dot laser," Electron. Lett. 51, 1686 1688 (2015) 23. C. Mesaritakis, C. Simos, H. Simos, S. Mikroulis, I. Krestnikov, E. Roditi, and D. Syvridis, "Effect of optical feedback to the ground and excited state emission of a passively mode locked quantum dot laser," Appl. Phys. Lett. 97, 061114 (2010) 24. A. Rohm, B. Lingnau, and K. Ludge, "Ground state modulation enhancement by two state lasing in quantum dot laser devices," Appl. Phys. Lett. 106, 1 6 (2015) 25. F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley and L. F. Lester, "A dual mode quantum dot laser operating in the excited state," Appl. Phys. Lett. 99, 1110 1113 (2011) 26. J. D. Walker, D. M. Kuchta, and J. S. Smith, "Wafer scale uniformity of vertical cavity lasers grown by modified phase locked epitaxy technique," Electron. Lett. 29, 239 240 (1993) 27. H. Huang, D. Arsenijevic, K. Schires, T. Sadeev, D. Bimberg, and F. Grillot, "Multimode optical feedback dynamics of InAs/GaAs quantum dot lasers emitting on different lasing states," AIP Adv. 6, 125114 (2016) 28. A. Kovsh, N. Maleev, A. Zhukov, S. Mikhrin, A. Vasil'ev, E. Semenova, Y. Shernyakov, M. Maximov, D. Livshits, V. Ustinov, N. Ledentsov, D. Bimberg, and Z. Alferov, "InAs/InGaAs/GaAs quantum dot lasers of 1.3 mm range with enhanced optical gain," J. Cryst. Growth 251, 729 736 (2003) 29. O. Stier, M. Grundmann, and D. Bimberg, "Electronic and optical properties of strained quantum dots modeled by 8 band k*p theory," Phys. Rev. B 59, 5688 (1999) 30. A. Schliwa, M. Winkelnkemper, and D. Bimberg, "Few particle energies versus geometry and composition of InxGa1x As/GaAs self organized quantum dots," Phys. Rev. B 79, 075443 (2009) 31. N. Schunk and K. Petermann, "Stability analysis for laser diodes with short external cavities," IEEE Photon. Technol. Lett. 1, 49 51 (1989) 32. J. Ohtsubo, Semiconductor Lasers: Stability, Instability and Chaos, Springer Series in Optical Sciences (Springer, 2010) 33. J. P. Toomey, D. M. Kane, C. McMahon, A. Argyris, and D. Syvridis, "Integrated semiconductor laser with optical feedback: transition from short to long cavity regime," Opt. Express 23, 18754 (2015) 34. N. Gavra and M. Rosenbluh, "Behavior of the relaxation oscillation frequency in vertical cavity surface emitting laser with external feedback," J. Opt. Soc. Am. B 27, 2482 2487 (2010) 35. M. Stubenrauch, G. Stracke, D. Arsenijevic, A. Strittmatter, and D. Bimberg, "15 Gb/s index coupled distributed feedback lasers based on 1.3 mm InGaAs quantum dots," Appl. Phys. Lett. 105, 011103 (2014)
author_names: H Uang

IN LYU-CHIHL

Christian Hen

D Ejan A Rsenijevic

D Ieter B Imberg

F Rederic G Rillot
title: Multimode optical feedback dynamics in InAs GaAs quantum dot lasers emitting exclusively on ground or excited states transition from short to long delay regimes
year: 2018

abstract: Summary form only given. Recent advances in monolithic integration technology have led to a number of new monolithic active and passive optical devices based on interferometric waveguide constructions, such as monolithic TDM and WDM multiplexers and demultiplexers. Here, we propose to apply the interferometric principle to design of semiconductor laser structures, resulting in parallel compound cavities (PCC) Whilst the idea of such a cavity allows numerous permutations, here we concentrate on the fractal dimensional geometry in which light from two or more parallel waveguides is combined by means of a coupler (of either directional, Y type, or multimode interference (MMI) type) into a single output waveguide. We theoretically analyse these structures using a model of their threshold, spectral and dynamical. Properties based on decomposition into modes of the active compound cavity and analysis of complex eigenfrequencies of these modes.
author_names: Eugene A Avrutin

A Catrina Bryce

Craig James Hamilton

Dan A Yanson

John M Arnold

John H Marsh
title: Analysis of monolithic parallel compound cavity semiconductor lasers for high brightness, single frequency, and short pulse operation
year: 1999

abstract: The dynamic response of a single mode semiconductor laser coupled to a passive external cavity is analysed through the numerical solution of its rate equations. A complete transmission system is simulated using a model derived from the analogy with transmission lines. Although the optical feedback decreases the damping coefficient of the relaxation oscillations, it causes a considerable reduction on the frequency chirp, always present in intensity modulation. In order to analyse the performance of the external cavity laser under realistic conditions, an optical pulse is propagated through a dispersive fiber and filtered in a receiver. The investigation of pulse broadening and the eye diagrams indicate that the system capacity can be increased by a factor of 2 by using an external resonator. Introduction A great deal of work has been done towards the enhancement of communication system capacity which has led, among other consequences, to the study and implementation of coherent systems. To implement such systems the performance of conventional semiconductor lasers has to be improved, specially regarding the spectral linewidth. DFB and DBR lasers although having small linewidth still do not achieve the necessary requirements. However, the coupling of a semiconductor laser to an external cavity can represent a 1000 fold spectral linewidth reduction [l] Another major problem always present on high bit rates intensity modulation lightwave systems is the frequency chirp. In this case the modulation of the carrier density induces a variation on the refractive index which causes a change in the emission frequency. Here, since the external cavity resonant frequency is independent on carrier flutuations the coupled configuration ECSL (external cavity semiconductor laser) reduces chirp considerably. Therefore external cavity lasers are of interest for coherent and intensity modulation optical systems. In this paper, a complete time domain analysis of the ECSL performance is presented. The study is based on the numerical solution of the ECSL rate equations. On deriving these equations, a new approach is used, based on an equivalency with transmission lines. It consists of the analysis of the propagating field components inside the diode leading to the system rate equations [4] that are numerically solved. A similar approach was used in [2] where different assumptions led to an analytical solution. Also, the assumptions made in order to derive and solve the system of rate equations and the numerical solution itself are discussed. The last section is divided in two parts. First, the response of the ECSL
author_names: L E M de Barros

E Moschin

Rui Fragassi Souza
title: Dynamic Response Of External Cavity Semiconductor Laser A Multigigabit Per Second Transmission Simulation
venue: SBMO International Microwave Conference/Brazil,
year: 1993

abstract: As an active research field, the self mixing interferometry (SMI) based on semiconductor lasers (SLs) is a highly promising and emerging technique for non contact sensing and parameter measurement of SLs. The basic structure of an SMI system consists of an SL, a lens and an external target. When a portion of reflected light from the target travels back to the laser cavity, a new lasing field is built up leading to both amplitude and phase modulations. The modulated output power is called a self mixing signal which carries the information of both the target and SL's feature parameters. Alpha factor, also known as linewidth enhancement factor, is one of the most important SL's feature parameters. It characterizes the characteristics of SLs, such as the linewidth, the chirp, the injection lock range and the dynamic performances. This paper presents a new method for retrieving alpha factor of SLs by making use of a self mixing interference (SMI) waveform. According to the well known Lang Kobayashi (L K) theory, the SMI waveform is shaped by multiple parameters, including the alpha, the optical feedback level factor (denoted as C) and other parameters related to the oscillation of the external target. In this work, we build a new equation based on the SMI model derived from the L K theory, which can be used to calculate the alpha value. In the existing SMI based methods for measuring the alpha factor, the optical feedback level C is limited within a certain narrow range. The proposed method is able to relieve this limitation. The associated simulations and experiments are carried out for verifying the proposed method.
author_names: Yan Gao

Yanguang Yu

Jiangtao Xi
title: Retreving alpha factor of semiconductor lasers from a self mixing interference waveform
venue: Photonics Asia
year: 2012