Query: semiconductor silicon

Candidate papers:

abstract: imperfections and impurities in semiconductor silicon is available in our digital library an online access to it is set as public so you can get it instantly. Our book servers saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Kindly say, the imperfections and impurities in semiconductor silicon is universally compatible with any devices to read.
author_names: Kathrin Abendroth
title: Imperfections And Impurities In Semiconductor Silicon
year: 2016

abstract: The silicon metal oxide semiconductor (MOS) material system is a technologically important implementation of spin based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g factor due to spin orbit (SO) effects. Here we advantageously use interface SO coupling for a critical control axis in a double quantum dot singlet triplet qubit. The magnetic field orientation dependence of the g factors is consistent with Rashba and Dresselhaus interface SO contributions. The resulting all electrical, two axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, $T_{\mathrm{2m} \star$$T2m, of 1.6 ms is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi static charge noise detuning variance of 2 meV is observed, competitive with low noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two axis qubit control, while not increasing noise relative to other material choices.As the performance of silicon based qubits has improved, there has been increasing focus on developing designs that are compatible with industrial processes. Here, Jock et al. exploit spin orbit coupling to demonstrate full, all electrical control of a metal oxide semiconductor electron spin qubit.
author_names: Ryan M Jock

Noah Tobias Jacobson

Patrick Harvey-Collard

Andrew M Mounce

Vanita Srinivasa

Daniel R Ward

John M Anderson

Ronald P Manginell

Joel R Wendt

Martin Rudolph

Tammy C Pluym

John King Gamble

Andrew D Baczewski

Wayne M Witzel

Malcolm S Carroll
title: A silicon metal oxide semiconductor electron spin orbit qubit
venue: Nature Communications
year: 2018

abstract: Heterogeneous integration of III V compound semiconductors on Silicon on Insulator is one the key technology for next generation on chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon On Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.
author_names: Yacine Halioua

Alexandre Bazin

Paul Monnier

T J Karle

Gunther Roelkens

Isabelle Sagnes

Rama Raj

Fabrice Raineri
title: Hybrid III V semiconductor/silicon nanolaser.
venue: Optics express
year: 2011

abstract: We report high output power and high gain semiconductor optical amplifiers integrated on a heterogeneous silicon/III V photonics platform. The devices produce 25 dB of unsaturated gain for the highest gain design, and 14 dBm of saturated output power for the highest output power design. The amplifier structure is also suitable for lasers, and can be readily integrated with a multitude of silicon photonic circuit components. These devices are useful for a wide range of photonic integrated circuits. We show a design method for optimizing the amplifier for the desired characteristics. The amplifier incorporates a low loss and low reflection transition between the heterogeneous active region and a silicon waveguide, and we report transition loss below 1 dB across the entire measurement range and parasitic reflection coefficient from the transition below 1 10 3.
author_names: Michael L Davenport

Sandra Skendzic

Nicolas Volet

Jared Hulme

Martijn J R Heck

John E Bowers
title: Heterogeneous Silicon/III V Semiconductor Optical Amplifiers
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2016

abstract: A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200 620 nm range. These devices show promise for use in high sensitivity, low cost UV visible photodetection and imaging applications.
author_names: Jack W Levell

Mario Ettore Giardini

Ifor D W Samuel
title: A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.
venue: Optics express
year: 2010

abstract: We have found that a shuffle set dislocation is nucleated in a semiconductor silicon device subjected to severe thermal processing. The dislocation transforms into a dissociated glide set dislocation after annealing at 500degC. A possible mechanism for the nucleation of a perfect shuffle set dislocation during thermal processing is that the dislocation nucleus was nucleated at a low temperature during prior ion implantation processing.
author_names: Satoshi Izumi

Hiroyuki Ohta

Chisato Takahashi

Hiroyasu Saka
title: Shuffle set dislocation nucleation in semiconductor silicon device
year: 2010

abstract: A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state of art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.
author_names: Gang Liu

Blair R Tuttle

Sarit Dhar
title: Silicon carbide: A unique platform for metal oxide semiconductor physics
year: 2015

abstract: The epitaxial integration of III V optoelectronic devices on silicon will be the enabling technology for full scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated sensing systems operating in the mid infrared (MIR) regime of the spectrum. In this article, we review recent developments, through several approaches, in the direct metamorphic epitaxial growth of various III V materials based lasers on silicon substrates. We show that GaAs based 1.3 mm III V quantum dot lasers and GaSb based MIR quantum well lasers grown on silicon substrates can operate with low threshold current density and high operating temperature, which hold promise for the future.
author_names: Eric Tournie

Laurent Cerutti

Jean-Baptiste Rodriguez

Huiyun Liu

Jiang Wu

Siming Chen
title: Metamorphic III V semiconductor lasers grown on silicon
year: 2016

abstract: The invention discloses a semiconductor silicon wafer manufacture process which comprises the steps of: 1, carrying out double side rough polishing on the silicon wafer after grinding and corroding, wherein the removal amount is 5 100 micrometers; 2, after double side rough polishing, carrying out double side medium polishing, wherein the hardness of polishing cloth or the grain size of grains of a polishing solution is less than that of the rough polishing, and the polishing removal amount is 1 100 micrometers; and 3, directly carrying out single face final polishing on the silicon wafer subjected to the double sidepolishing, wherein the polishing removal amount is less than 0.5 micrometer. The silicon wafer with high planeness can be obtained by the process, and the once yield of the product is improved. The invention has the advantage of providing a manufacture method of the large size silicon wafer for improving the geometric parameter level of the silicon wafer surface.
title: Semiconductor silicon wafer manufacture process
year: 2009

abstract: Metal semiconductor metal (MSM) photodetectors based on graphene/p type Si Schottky junctions are fabricated and characterized. Thermionic emission dominates the transport across the junctions above 260 K with a zero bias barrier height of 0.48 eV. The reverse bias dependence of the barrier height is found to result mostly from the Fermi level shift in graphene. MSM photodetectors exhibit a responsivity of 0.11 A/W and a normalized photocurrent to dark current ratio of 4.55 x 104 mW 1, which are larger than those previously obtained for similar detectors based on carbon nanotubes. These results are important for the integration of transparent, conductive graphene electrodes into existing silicon technologies.
author_names: Yanbin An

Ashkan Behnam

Eric Pop

Ant Ural
title: Metal semiconductor metal photodetectors based on graphene/p type silicon Schottky junctions
year: 2013