Query: Research progress of room temperature semiconductor infrared photodetectors

Candidate papers:

abstract: In recent years, quasi one dimensional semiconductor nanowires have attracted numerous research interests in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, an III V compound semiconductor structure with a narrow bandgap, shows high electron mobility and high absorption from the visible to the mid wave infrared (MWIR) holding promise for roomtemperature high performance infrared photodetectors. Therefore, the material growth, device preparation, and performance characteristics have attracted increasing attention, enabling high sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states, and metal contacts. Then, three solutions, including the visible light assisted infrared photodetection technology, the vertical nanowire array technology, and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potentials and challenges of the state of the art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next generation high performance photodetectors over a wide spectrum range.
author_names: Tengfei Xu

Hailu Wang

Xiaoyao Chen

Man Luo

Lili Zhang

Yueming Wang

Fansheng Chen

Chongxin Shan

Chen-Hui Yu
title: Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
venue: Nanotechnology
year: 2020

abstract: As IV VI compound, tin telluride belongs to direct band gap semiconductor materials. Under the condition of room temperature and atmospheric pressure, tin telluride has a stable face centered cubic crystal structure. Being a topological crystal insulator, tin telluride has a highly symmetrical crystal structure. Due to its helical multiple surface states and strong topological protection characteristics, tin telluride can be used to fabricate new electronic devices without energy consumption. Moreover, on account of its excellent properties such as band gap free topological surface state and narrow band gap posture, it has great potential in the field of preparing new photodetectors with wide spectral response from ultraviolet, visible light to infrared. In addition, because of its high mobility at room temperature, tin telluride is expected to be used for high performance photoelectric detection with ultra fast response speed. In this review, the preparation methods, crystal structures and properties of tin telluride materials were summarized from the point of view that they were suitable for photodetectors. And the research progress of tin telluride in infrared photoelectric detection in recent years was summarized. Then the development potential of tin telluride in the field of photodetectors was prospected, and Shou Gao Ri Qi :2020 11 21; Xiu Ding Ri Qi :2020 12 25 Ji Jin Xiang Mu :Guo Jia Zhong Dian Yan Fa Ji Hua (2019YFB2203404);Yun Nan Sheng Chuang Xin Tuan Dui Xiang Mu (2018HC020) Di 50 Juan Di 1 Qi Hong Wai Yu Ji Guang Gong Cheng 2021 Nian 1 Yue Vol.50 No.1 Infrared and Laser Engineering Jan. 2021
author_names: Song Li Yuan Liyuan Song

Tang Li Bin Libin Tang

Hao Qun Qun Hao
title: Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)
year: 2021

abstract: Recently,it becomes more essential of higher quality of the semiconductor optoelectronic devices with the progression of the economy informationisation and the armament informationisation.As one of the key components,optoelectronic detector attracts so much attention from the whole world.Fortunately it has been making huge progress in this area.In this paper,we introduce the research and development of full/multiple spectrum Focal Plane Array(FPA) detectors of III V semiconductors,including the quantum well infrared,AlGaN violet,InGaAs near infrared room temperature and Sb compound FPA detectors.
author_names: Chen Lianghui
title: Development of III V semiconductor FPA photodetectors of full optical spectrum
year: 2008

abstract: One dimensional (1D) semiconductor nanowires (NWs) have drawn considerable research attention over the past few decades because of their unique properties and potential applications in nanoelectronics, photonics, luminescent materials, lasing materials, and biological and medical sensing. 1 3 Impressive progress has been demonstrated in highly effi cient light sources (nanolasers) waveguides, fi eld effect transistors and photodetectors based on group IV elements (Si and Ge) 4 III V compound semiconductors (GaN and GaAs) 2 5 and semiconducting oxides (ZnO, SnO 2 and In 2 O 3 6 7 Owing to its direct bandgap (ca. 1.74 eV at room temperature) good absorption ability, and excellent photosensitivity, 8 9 CdSe is recognized as a promising light harvesting material to be applied in optoelectronics. Especially, the fundamental emission of CdSe falls in the near infrared (NIR) region, and biosensors operating in this region can avoid interference from biological media such as tissue autofl uorescence and scattering light, and thereby facilitate relatively interference free sensing. 10
author_names: Rui Chen

M Iqbal Bakti Utama

Zeping Peng

Bo Peng

Qihua Xiong

Handong Sun
title: Excitonic properties and near infrared coherent random lasing in vertically aligned CdSe nanowires.
venue: Advanced materials
year: 2011

abstract: The 2 4 mm band is a very important infrared atmospheric window. Lasers operating in this band have a wide range of applications in gas detection, medical application and industrial processing. The low dimensional structure of antiminide semiconductor materials has the unique advantage of narrow forbidden band, direct transition luminescence, and is an ideal material system for realizing mid infrared semiconductor lasers. In recent years, research on antimonide semiconductor lasers at home and abroad has made important progress, achieving wavelength expansion of quantum well luminescence, room temperature continuous lasing of high power single chip and laser bars, and continuous room temperature continuous operation of multi band single mode lasers. Due to the complex composition of the low dimensional materials of the antimonide and the special interface Shou Gao Ri Qi :2020 10 26; Xiu Ding Ri Qi :2020 11 25 Ji Jin Xiang Mu :Guo Jia Zi Ran Ke Xue Ji Jin (61790580,61790581,61790582,61790583);Yan Dong Sheng Zhong Dian Yan Fa Ji Hua (2020B0303020001, 2018B030329001) Zuo Zhe Jian Jie :Yang Cheng Ao (1990 ,Nan ,Zhu Li Yan Jiu Yuan ,Bo Shi ,Zhu Yao Cong Shi Ti Hua Wu Hong Wai Ji Guang Qi Fang Mian De Yan Jiu Email:yangchengao@semi.ac.cn Tong Xun Zuo Zhe :Zhang Yu (1981 ,Nan ,Fu Yan Jiu Yuan ,Bo Shi ,Zhu Yao Cong Shi Ti Hua Wu Hong Wai Ban Dao Ti Ji Guang Qi Fang Mian De Yan Jiu Email:zhangyu@semi.ac.cn Niu Zhi Chuan (1963 ,Nan ,Yan Jiu Yuan ,Bo Shi Sheng Dao Shi ,Bo Shi ,Zhu Yao Cong Shi Di Wei Ban Dao Ti Guang Dian Cai Liao Yu Liang Zi Qi Jian Fang Mian De Yan Jiu Email:zcniu@semi.ac.cn Di 49 Juan Di 12 Qi Hong Wai Yu Ji Guang Gong Cheng 2020 Nian 12 Yue Vol.49 No.12 Infrared and Laser Engineering Dec. 2020
author_names: Yang Cheng Ao Chengao Yang

Zhang Yi Yi Zhang

Shang Jin Ming Jinming Shang

Chen Yi Hang Yihang Chen

Wang Tian Fang Tianfang Wang

Tong Hai Bao Haibao Tong

Ren Zheng Wei Zhengwei Ren

Zhang Yu Yu Zhang

Xu Ying Qiang Yingqiang Xu

Niu Zhi Chuan Zhichuan Niu
title: Research progress of 2 4 mm mid infrared antimonide semiconductor lasers (Invited)
year: 2020

abstract: Infrared detection plays an important role in cutting edge fields such as biomedicine, smart cities, and space exploration. In recent years, a new type of nanoscale semiconductor represented by two dimensional materials is one of the candidates for a new generation of infrared photodetection technology. This is due to the fact that some index of two dimensional materials device have exceeded the theoretical limits of traditional thin film devices, such as detection sensitivity, ultralow dark current, high working temperature, etc. Two dimensional materials can easily be controlled by local field. In this review, the mechanism of three local fields to achieve high performance at room temperature were introduced in the first part, including ferroelectric local field, the interlayer built in electric field, and the in plane built in electric field. Secondly, we introduced the photoelectric enhancement methods of unilateral depletion heterojunction and surface plasmon structure to solve the problem of low quantum efficiency and low light absorption caused by atomic thin effect of two dimensional materials. Finally, we showed some applications of two dimensional materials in infrared photodetection field. The exploration reveals the potential and prospect of the novel two dimensional semiconductor in the field of infrared photodetection, which provides some new methods and ideas for the new generation infrared detector technology.
author_names: Xu Hang Yu Hangyu Xu

Wang Peng Peng Wang

Chen Xiao Shuang Xiaoshuang Chen

Hu Wei Da Weida Hu
title: Research progress of two dimensional semiconductor infrared photodetector (Invited)
year: 2021

abstract: Compound semiconductor mid wavelength infrared photodetectors operating at room temperature are the sensors of choice for demanding applications such as thermal imaging, heat seeking, and spectroscopy. However, those detectors suffer from high dark current and thus normally require additional cooling accessories. In this work, we argue for the fundamental feasibility that by using nanowires coupled with plasmonic nano antennae as photoabsorbers, the dark current can be largely reduced compared with typical planar devices. To demonstrate the idea, we simulate the device characteristics, such as dark current, responsivity, and detectivity, of InAsSb0.07 nanowire photodetectors, and compare those properties with the best research InAs photovoltaic diodes. The results show that the designed nanowire detectors offer over one order lower dark current and enable a peak detectivity of 7.0x1010 cm Hz1/2W 1 at 3.5 mm. We believe this work will provide a guidance to the design of nanowire based MWIR photodetectors and stimulate additional experimental and theoretical research studies.
author_names: Dingkun Ren

Zixuan Rong

C Ta Thanh Minh

Alan C Farrell

Xiao Meng

Diana L Huffaker
title: Feasibility of room temperature mid wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers
venue: OPTO
year: 2018

abstract: Two dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs) black phosphorus (BP) and related derivatives, have attracted great attention due to their advantages of flexibility, strong light matter interaction, broadband absorption and high carrier mobility, and have become a powerful contender for next generation infrared photodetectors. However, since the thickness of two dimensional materials is on the order of nanometers, the absorption of two dimensional materials is very weak, which limits the detection performance of 2D materials based infrared photodetector. In order to solve this problem, scientific researchers have tried to use optimized device structures to combine with two dimensional materials for improving the performance of infrared photodetector. In this review, we review the progress of room temperature infrared photodetectors with hybrid structure based on 2D materials in recent years, focusing mainly on 2D nD (n 0, 1, 2) heterostructures, the integration between 2D materials and on chip or plasmonic structure. Finally, we summarize the current challenges and point out the future development direction.
author_names: Tian-Min Liu

Lei Tong

Xinyu Huang

Lei Ye
title: Room temperature infrared photodetectors with hybrid structure based on two dimensional materials
year: 2019

abstract: Ultra sensitive single photon detection is a key technology for the development of optical quantum information and quantum manipulation. It is of important scientific significance and application value to realize high efficiency, high sensitivity, low power and low cost single photon photodetectors. There is still a large gap between visible single photon detector based on silicon and infrared ones in terms of the cost and performance. Exploring the technology of infrared single photon detection with novel materials and mechanism has become the urgent needs in the field of photodetection. In recent years, low dimensional materials have offered a new possibility for realizing high gain, room temperature and broad band photodetectors due to their unique physical and chemical properties. The research on the low dimensional materials based photodetectors with good performance has also become a hot topic in the field of infrared photodetection. In this review, the basic principles of traditional avalanche infrared photodetectors were introduced firstly. On this basis, the latest development of avalanche devices based on novel low dimensional materials was summarized. Then the new gain amplification mechanism of the photodetector based on photogating effect was discussed and the structure as well as the performance of the devices were reviewed. Finally, the future developing directions and challenges of the infrared single photon detection technology were prospected.
author_names: Wu Jing Yuan Jingyuan Wu

Liu Zhao Guo Zhaoguo Liu

Zhang Tong Tong Zhang
title: Research progress of infrared single photon detection with high gain (Invited)
year: 2021

abstract: In recent years, infrared photodetectors have attracted increasing interest due to their promising applications in both military and civil areas. To further realize room temperature, wide spectrum, high sensitivity, fast response and low power consumption infrared photodetectors, low dimension semiconductors are considered as potential channel materials and have been studied widely. Among them, nanowires have special electrical and photoelectrical characteristics, showing enormous advantages in the applications of infrared photodetectors such as small size, low power consumption, high light absorption efficiency, abundant surface states, outstanding ability to separate and collect photoelectrons, good compatibility with Si complementary metal oxide semiconductor (CMOS) technology and so on. At present, nanowires infrared photodetectors are going through continuous progress and breakthrough. In this review, recent advances in semiconductor nanowires infrared photodetectors were outlined in details. At the beginning, the basic characteristics, material choice and preparation methods of nanowires were introduced. Subsequently, many nanowires including binary and ternary compound semiconductors for the use of infrared detection were presented and their current detectable levels were illustrated precisely. Many methods of further improving their detecting performances were also classified and summarized, including constructing heterostructures, applying external field and integrating with other functional devices. On the basis of the above mentioned advances, a comparison of advantages and disadvantages among different nanowires infrared detectors was given. In the end, the future development trend was indicated based on the challenges in this area and preliminary suggestions for the technical development route were presented.
author_names: Guo Ya Nan Yanan Guo

Liu Dong Dong Liu

Miao Cheng Cheng Chengcheng Miao

Sun Jia Min Jiamin Sun

Yang Zai Xing Zai-xing Yang
title: Recent advances in semiconductor nanowires infrared photodetectors (Invited)
year: 2021