Query: thin film preparation methods for deposition

Candidate papers:

abstract: The art and science of the fabrication of thin solid films have an accelerated growth because of its impact in the electronic devices. The development of number of thin film devices in which, semiconductor thin films are mainly used, has revolutionized various fields. The investigations of different parameters governing the properties of semiconductor thin films lead to manipulation of these properties for the progress of humankind. The development of thin film technology has led to its application in diverse fields from microelectronics to optics, space science to aircrafts, and superconductivity to photovoltaic and to spintronics. Thus, the thin film studies have directly or indirectly caused the advancement of many new areas of research in solid state physics and chemistry and will continue to play increasingly important roles in the study of a variety of problems of basic and technological importance.
title: Chapter 2 Thin Film Preparation Methods for Deposition of SnSe Films 2 1
year: 2012

abstract: Thin film nanocomposite (TFN) membranes prepared by embedding nanofillers into an ultrathin polyamide layer have paved the way toward developing high performance reverse osmosis (RO) desalination membranes. Scale up production of TFN membranes is still a challenging issue, however, since previous studies have merely followed the same fabrication method for conventional RO membranes. Herein, we introduced a novel preparation method for TFN membranes using spray assisted nanofiller predeposition to circumvent the limitations in conventional methods. The precise control of nanofiller (ZIF 8) loading was possible by simply varying the spraying ZIF 8 concentration. Most importantly, TFN membranes prepared by both spray and conventional method showed similar RO performance, while the spray method only requires ~100 times the minimal amount of ZIF 8 with the most unprecedentedly short deposition time <1 min) ever reported. Our results revealed that the spray method would be promising for the scale up production.
author_names: Tae Hoon Lee

In-Sung Park

Jee Yeon Oh

Jun Kyu Jang

Ho Bum Park
title: Facile Preparation of Polyamide Thin Film Nanocomposite Membranes Using Spray Assisted Nanofiller Predeposition
venue: Industrial Engineering Chemistry Research
year: 2019

abstract: Abstract The present work reports the successful synthesis of the nanostructured carbon doped TiO2 thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO2 sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 degC to produce the carbon doped TiO2 thin films. The obtained thin films were characterized by means of X ray Diffraction (XRD) Raman spectroscopy, diffuse reflectance spectroscopy (DRS) X ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 degC results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band gap energy of TiO2 to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.
author_names: Hossein Rasoulnezhad

Ghassem Kavei

Kamran Ahmadi

Mohammad Reza Rahimipour
title: Combined sonochemical/CVD method for preparation of nanostructured carbon doped TiO2 thin film
year: 2017

abstract: In this paper, we describe a binder free reduced graphene oxide/carbon nanotube hybrid thin film electrode prepared using a one step electrostatic spray deposition method. Though we introduce a novel method, we suspect that the greater potential impact is more related to the fact that this technique is able to accomplish producing an electrode with a single process and allows a degree of control over the film properties not yet found in other fabrication methods that require multiple steps (that include post processing) In order to investigate the effect of carbon nanotube as a nano spacer on the electrochemical properties of the reduced graphene oxide/carbon nanotube hybrid thin film electrodes, the various content of carbon nanotube was incorporated between the 2 dimensional layered reduced graphene oxide sheets to prevent restacking among reduced graphene oxide sheets and their electrochemical properties were systemically investigated using cyclic voltammetry, galvanostatic charge/discharge test and electrochemical impedance spectroscopy. The hybrid thin film electrode delivered a higher reversible specific capacitance of 187 F*g 1 at 0.5 A*g 1 and showed a better rate capability by maintaining 73% of the specific capacitance at 16 A*g 1 (vs. 0.5 A*g 1) which exhibit remarkable electrochemical performances than a RGO thin film electrodes for supercapacitor applications.
author_names: Hee-Chang Youn

Seong-Min Bak

Sang-Hoon Park

Seung-Beom Yoon

Kwang Chul Roh

Kwang-Bum Kim
title: One step preparation of reduced graphene oxide/carbon nanotube hybrid thin film by electrostatic spray deposition for supercapacitor applications
venue: Metals and Materials International
year: 2014

abstract: Abstract A novel series of alkyl monosubstituted thiophene/phenylene co oligomers (TPCOs) has been synthesized and characterized. The introduction of alkyl chains to TPCOs improved the solubility in organic solvents. Thin films of these compounds were prepared by the vacuum deposition, solution cast, and skim methods. Of these, the solution cast films and skim films consist of highly ordered structures characterized by molecular bilayers. In particular, the skim method produced a large sized free standing thin film. We investigated the carrier transport of the thin films on the field effect transistor (FET) configurations. These FET devices exhibited typical p channel characteristics with clear saturation region. The introduction of alkyl monosubstituents is responsible for enhancement in the carrier mobility. The device characteristics are contrasted with those of alkyl disubstituted compounds.
author_names: Ryuji Hirase

Mari Ishihara

Toshifumi Katagiri

Yosuke Tanaka

Hisao Yanagi

Shu Hotta
title: Alkyl monosubstituted thiophene/phenylene co oligomers: Synthesis, thin film preparation, and transistor device characteristics
year: 2014

abstract: Abstract Numerous LiCoO2 cathode thin films have been prepared for all solid state thin film battery applications. Preparation methods include sputtering, pulsed laser deposition, electron beam evaporation, screen printing, and spin coating. When compared to vacuum deposition methods, the solution processed fabrication methods could result in significant cost savings and large area production. Unfortunately, high temperature annealing (Tanneal 700 degC) of LiCoO2 cathode thin film is usually crucial for achieving a high performance layered phase. Here, we report on phase control of spin coated LiCoO2 thin film by varying the molecular weight of polyvinylpyrrolidone (PVP) at low temperature. We could achieve thick and smooth film morphology by optimizing the PVP molecular weight. This method could be a promising cathode layer for low cost thin film batteries.
author_names: Seung Min Yu

Chahwan Hwang

Do Jeon Kim

Joohyung Park

Seonhyoung Kim

Jongin Hong

Jihyun An

Tae Hoon Lee

Myung-Gil Kim
title: Characterization of low temperature solution processed LiCoO2 thin film cathode with molecular weight control of polyvinylpyrrolidone
year: 2018

abstract: The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient pressure methods) with surface and bulk sensitive analysis (photo emission, x ray emission, x ray absorption) in the same UHV system, allowing fast and contamination free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water splitting devices and other functional thin film materials.
author_names: Iver Lauermann

Alexander Steigert
title: CISSY: A station for preparation and surface/interface analysis of thin film materials and devices
year: 2016

abstract: Pollution of water resources with pesticide compounds has raised serious environmental problems, and for photocatalytic degradation of these pollutants, thin film photocatalysts are preferred to colloidal ones due to the separation problem of colloidal nanoparticles. In this work, nanostructured TiO2 and N doped TiO2 thin films with high transparency were deposited on glass and quartz substrates through sonochemical chemical vapor deposition (CVD) method. The films prepared on glass and quartz substrates had nanocubic and nanospherical morphology, respectively. The presence of N atoms in the structure of TiO2 resulted in a decrease in the band gap energy of TiO2 and also in the reduction of photogenerated electron hole recombination rate. Furthermore, the presence of N atoms induced the formation of Ti3+ species which can act as hole trapping centers. The prepared thin films were also used for the visible light photocatalytic degradation of paraoxon pesticide. According to these results among the prepared thin films, the N doped TiO2 thin films have higher photocatalytic activity than pure TiO2 thin films. Moreover, in comparison with the thin films deposited on quartz substrate, the films on glass substrate have higher photocatalytic performance, which can be related to the special nanocubic morphology of these samples.
author_names: Hossein Rasoulnezhad

Ghader Hosseinzadeh

Reza Hosseinzadeh

Naser Ghasemian
title: Preparation of transparent nanostructured N doped TiO2 thin films by combination of sonochemical and CVD methods with visible light photocatalytic activity
venue: Journal of Advanced Ceramics
year: 2018

abstract: Abstract The structural properties of In2Se3 precursor thin films grown by chemical spray pyrolysis (CSP) and physical vapor deposition (PVD) methods were compared. This is to investigate the feasibility to substitute PVD process of CuInSe2 (CISe) films by CSP films as precursor layer, thus decreasing the production cost by increasing material utilization efficiency. Both films of 1 mm thickness were deposited at the same substrate temperature of 380 degC. X ray diffraction and Raman spectra confirm the formation of g In2Se3 crystalline phase for both films. The PVD and CSP films exhibited (110) and (006) preferred orientations, respectively. The PVD films showed a smaller full width at half maximum value (0.09deg) compared with CSP layers (0.1deg) Films with the same crystalline phase but with different orientations are normally used in the preparation of high quality CISe films by 3 stage process. Scanning electron microscope cross section images showed an important difference in grain size with well defined larger grains of size 1 2 mm in the PVD films as compared to CSP layers (600 nm) Another important characteristic that differentiates the two precursor films is the oxygen contamination. X ray photoelectron spectroscopy showed the presence of oxygen in CSP films. The oxygen atoms could be bonded to indium by replacing Se vacancies, which are formed during CSP deposition. Taking account of the obtained results, such CSP films can be used as precursor layer in a PVD process in order to produce CISe absorber films.
author_names: Pablo Itzam Reyes-Figueroa

Thomas Painchaud

Thomas Lepetit

Sylvie Harel

Ludovic Arzel

Junsin Yi

Nicolas Barreau

Subramaniam Velumani
title: Structural properties of In2Se3 precursor layers deposited by spray pyrolysis and physical vapor deposition for CuInSe2 thin film solar cell applications
year: 2015

abstract: Abstract High temperature superconductor thin films of high quality have successfully been deposited on oxide substrates with good lattice match to the films by a variety of different techniques. Pulsed laser deposition [PLD] and sputtering have been appeared to be the most popular methods at least in the scope of thin film preparation for basic research and development. Both methods do not require any post deposition annealing steps if the conden sation of the film is done at high substrate temperatures [e.g. 750deg C] and high oxygen partial pressure [e.g. 10 200 Pa] Films deposited by both methods using optimized preparation conditions show comparable super conducting parameters like critical temperatures exceeding 90 K and critical currents larger than 10 6 A/cm 2 at 77K. The different growth mechanisms of the films prepared by the two methods give rise to some morphological differences of the films. The advantages of PLD vs sputtering are discussed and specified with respect to their potential in the research area as well as in the application oriented work. Some recent developments like large area in situ deposition by sputtering, epitaxial growth of YBCO films with oriented in plane c axis by PLD and epitaxial growth of YBCO films on epitaxial buffer layers on silicon are discussed.
author_names: H -U Habermeier

Gunter Beddies

Bernd Leibold

G Lu

Gunter P Wagner
title: Y Ba Cu O high temperature superconductor thin film preparation by pulsed laser deposition and RF sputtering: A comparative study
year: 1991