Query: IRPS cartier 2013

Candidate papers:

abstract: Continued scaling of semiconductor devices in logic and memory applications requires the introduction of high k (HK) dielectrics to enhance the capacitance density while maintaining a low leakage. Of particular concern in DRAM memory applications is the so called `dielectric relaxation current' which is significantly enhanced with HfO2 dielectrics as compared to SiO2. In this paper, it is shown that these relaxation currents arise from electron trapping/detrapping by/from oxygen vacancy defects in the HfO2 dielectric from/to the contact electrodes. This understanding is utilized to minimize `dielectric relaxation currents' by optimizing the defect structure in the HK dielectric. By creating trap free dielectric films with N or La doping, we show that substantial reductions in the relaxation currents can be achieved. For the first time, it is demonstrated that a HK dielectric stack formed as a result of these treatments can have reduced relaxation currents similar to SiO2, thus providing a pathway to solving a fundamental paradigm associated with HK dielectrics that has persisted for several years.
author_names: Eduard Cartier

Takashi Ando

Marco J P Hopstaken

Vijay Narayanan

Rishikesh Krishnan

Joseph F Shepard

M D Sullivan

Siddarth A Krishnan

Michael P Chudzik

Sandip De

Rajan Kumar Pandey

Mohit Bajaj

Kota Murali

Andreas Kerber
title: Characterization and optimization of charge trapping in high k dielectrics
venue: 2013 IEEE International Reliability Physics Symposium (IRPS)
year: 2013

abstract: We compare the intrinsic reliability of the dielectric stack of a high performance bulk planar 20nm replacement gate technology to the reliability of high performance bulk planar 28 nm gate first high k metal gate (HKMG) technology, developed within the IBM Alliance. Comparable N/PFET TDDB and comparable/improved NFET PBTI are shown to be achievable for similar Tinv. The choice to not include channel silicon germanium as a PFET performance element in the 20nm technology impact NBTI, driving a potential tradeoff between NBTI and PBTI. The complexity of integrating such performance elements while accounting for reliability/performance tradeoffs demands their selection during technology definition with due consideration to realistic product usage conditions.
author_names: William McMahon

C E Tian

Suresh Uppal

H Kothari

M Jin

Giuseppe Larosa

Tanya Nigam

Andreas Kerber

Barry P Linder

Eduard Cartier

Wing L Lai

Yang Liu

Ravikumar Ramachandran

Unoh Kwon

Biju Parameshwaran

Siddarth A Krishnan

Vijay Narayanan
title: Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high k metal gate technology and comparison to 28nm gate first high k metal gate process
venue: 2013 IEEE International Reliability Physics Symposium (IRPS)
year: 2013

abstract: Bias Temperature Instability (BTI) degradation and recovery with different types of MOL capping layers are investigated in a 20nm Replacement Metal Gate (RMG) CMOS technology. It is found that less compressive RMG capping layers substantially improve reliability and device performance because of less hydrogen within the RMG capping material. The hydrogen content plays an important role in BTI degradation and recovery. Increased hydrogen enhances interface state generation during NBTI stress and suppresses h+ trap activation. This change in interface states has minimal impact on PBTI.
author_names: M Jin

C E Tian

Giuseppe La Rosa

Suresh Uppal

William McMahon

H Kothari

Yang Liu

Eduard Cartier

Wing L Lai

A Dasgupta

S M Polvino

Michael P Belyansky

A Chen

X Zhou

A Madan

Y Yao

N Klymko

Vijay Narayanan
title: Impact of hydrogen in capping layers on BTI degradation and recovery in high k replacement metal gate transistors
venue: 2013 IEEE International Reliability Physics Symposium (IRPS)
year: 2013

abstract: Presents 27 abstracts for the tutorials at IRPS 2013. The complete presentations were not made available for publication as part of the conference proceedings.
author_names: Robert J Kaplar
title: 2013 IRPS tutorial program [27 abstracts of IRPS tutorials]
venue: IRPS 2013
year: 2013

author_names: Gad S Haase
title: IRPS 2013 tutorial: Reliability of Low k Interconnect Dielectrics in Advanced CMOS Technologies.
year: 2013

abstract: La prochaine seance du seminaire aura lieu le 17 mai de 16h a 18h, a l'Universite Paris I Pantheon Sorbonne, en salle Picard (esc. C, 3e etage) Nous accueillerons Marie Cartier et Christelle Avril, deux sociologues qui presenteront leurs travaux autour des emplois de service a domicile (femmes de menage, aides a domicile pour personnes agees et assistantes maternelles) tres majoritairement exerces par des femmes des classes populaires. Cette seance sera l'occasion d 'aborder la maison comme
author_names: Anais Albert
title: Prochaine seance du seminaire le 17 mai 2013 la maison comme lieu de travail, avec Marie Cartier et Christelle Avril bibliographie indicative
year: 2013

abstract: Du 19 novembre 2013 au 6 avril 2014, la Fondation Cartier pour l'art contemporain proposa une exposition intitulee America Latina. Photographies 1960 2013, concue en collaboration avec le musee Amparo de Puebla (Mexique) et a la realisation de laquelle l'Institut des hautes etudes de l'Amerique latine a ete associe. Rassemblant les oeuvres de plus de 70 artistes originaires de onze pays differents, cet evenement ambitieux offre au public parisien la possibilite de decouvrir le foisonnement et
author_names: Olivier Compagnon
title: Un demi siecle de photographie latino americaine a la Fondation Cartier pour l'art contemporain
year: 2013

abstract: Voici quelques photos de notre sortie de fin d'annee cosmodome, biodome, metro (petit extra) et Place Jacques Cartier. Bonnes vacances
author_names: Melissa Fortin
title: Sortie a Montreal 12 juin 2013 (maternelle et 1re annee)
year: 2013

abstract: Appel a contributions Colloque "Populations pionnieres, populations coloniales, populations metisses (XVIe XXe siecles)" Lyon, 25 26 novembre 2013 Centre Jacques Cartier. Date de soumission 15 mars 2013. Les populations des differents continents, et plus particulierement celles des continents africain et americain, telles que nous les connaissons aujourd'hui, sont le fruit de processus historiques complexes. A partir du XVIe siecle, les puissances europeennes sont parties a la conquete d'
title: Appel a contributions. Colloque "Populations pionnieres, populations coloniales, populations metisses (XVIe XXe siecles)"
year: 2013

abstract: Le mardi 26 novembre 2013, Lyon BD Festival organise un colloque dedie aux "Festivals de bande dessinee. Manifestations artistiques, culturelles, sociales et economiques" dans le cadre des entretiens Jacques Cartier (de 9h00 a 18h00, Hotel de Ville de Lyon) "Notre objectif dans ce colloque est de voir comment, au dela de l'aspect festif d'un festival de bande dessinee, sont liberees des energies creatrices au service du developpement culturel et economique de notre societe." Programme
author_names: Benedicte Tratnjek
title: Colloque "Les festivals de bande dessinee"
year: 2013