Query: Surface emitting semiconductor lasers

Candidate papers:

abstract: A description is given of the research progress in developing a vertical cavity surface emitting (SE) injection laser based on GaAlAs/GaAs and GaInAsP/InP systems. Ultimate laser characteristics, device design, state of the art performances, possible device improvement, and future prospects will also be discussed. The authors propose a vertical cavity surface emitting semiconductor laser. To reduce the threshold current, they improved the laser reflector and introduced a circular buried heterostructure. The microcavity structure, which is 7 mu m long and 6 mu m in diameter, was realized with a threshold of 6 mA. Thus, possibilities of an extremely low threshold current SE laser device and a densely packed two dimensional array are suggested.
author_names: Kenichi Iga

Fumio Koyama

Susumu Kinoshita
title: Surface emitting semiconductor lasers
year: 1988

author_names: Fumio Koyama

Satoshi Shinada

Kenya Goto

Kenichi Iga
title: Surface emitting semiconductor lasers for high capacity optical data storage
year: 1998

abstract: We review the wavelength engineering of micromachined vertical cavity surface emitting lasers (VCSELs) including the wavelength athermalization, wavelength tuning, and multiple wavelength integration. The integration of a thermally actuated cantilever enables us to tailor the temperature dependence of lasing wavelengths. The thermal drift of lasing wavelengths in conventional single mode semiconductor lasers, which is typically 0.07 nm/K, can be compensated by using the thermal actuation of a cantilever mirror. We are able to realize "athermal operation" of VCSELs under uncooled operations. This novel function could be useful for WDM optical interconnects, local area networks, and access networks with narrow channel spacing under uncooled operations. In addition, continuous wavelength tuning can be realized by using either electrothermal or electrostatic force actuation of the cantilever structure, which provides the athermal and tunable operation at the same time. Also, the lithography defined multiwavelength integration of an athermal VCSEL array is addressed.
author_names: Fumio Koyama

Masanori Nakahama
title: Micromachined Vertical Cavity Surface Emitting Lasers Athermalization, Tuning, and Multiwavelength Integration
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2015

abstract: In this paper we review the research progress of surface emitting lasers. A two dimensional arrayed configuration of surface emitting lasers will open up a new era of the semiconductor laser, since it provides high power capability, parallel optical processing, and vertical optical interconnection of circuit boards. We present experimental results on vertical cavity surface emitting semiconductor lasers. In order to reduce the threshold current, some improvements have been made on the laser reflector and a circular buried heterostructure has been introduced to confine injection current more effectively. The microcavity structure, which is 7 mm long and 6 mm in diameter, yields a threshold of 6 mA. A possibility of realizing an extremely low threshold current surface emitting laser device and a densely packed two dimensional array are suggested.
author_names: Kenichi Iga

Fumio Koyama

Susumu Kinoshita
title: Surface emitting semiconductor laser array: Its advantage and future
year: 1989

abstract: We propose a micromachined vertical cavity resonator enabling temperature insensitive operation for surface emitting lasers or optical add/drop filters. The strain induced displacement from differential thermal expansion is used to compensate the wavelength shift caused by temperature variation. Also, a wavelength trimming technology using the same principle with precise strain control is suggested. The possibility of a drastic reduction in the temperature sensitivity of wavelengths, as well as precise wavelength adjustment, is presented. We fabricated a micromachined vertical cavity filter with a GaAlAs/GaAs multilayer reflector, which is mechanically tuned by differential thermal expansion. We observed a large negative temperature coefficient of the resonant wavelength. It is demonstrated that its temperature dependence can be widely controlled by the proposed concept. The possibility of temperature insensitive operation is discussed.
author_names: Fumio Koyama

Takeru Amano

N Furukawa

Nobuhiko Nishiyama

Masakazu Arai

Kenichi Iga
title: Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
year: 2000

abstract: We have numerically analyzed some thermal characteristics of cw long wavelength surface emitting lasers with epitaxially grown semiconductor distributed Bragg reflectors (DBRs) It was shown that the device thermal resistance for GaAs/AlAs DBRs epitaxially fused to GalnAsP/InP emitting layers is 1/3 of that for GalnAsP/InP DBRs and almost comparable to that for the optimum dielectric cavity. The threshold current lower than 10 mA and the electrical resistance lower than 100 O are necessary to obtain the cw operation beyond room temperature
author_names: Toshihiko Baba

Tomonobu Kondoh

Fumio Koyama

Kenichi Iga
title: Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II) Semiconductor Distributed Bragg Reflectors
year: 1995

abstract: We propose a polarization controlled vertical cavity surface emitting laser (VCSEL) using a birefringent metal/semiconductor polarizer on a distributed Bragg reflector. Theoretically, we found that the proposed concept can provide an extremely large polarization selectivity at the resonant cavity wavelength by adjusting the phase condition between two polarization states. Experimentally, we have demonstrated a 0.98 /spl mu/m InGaAs/GaAs VCSEL with an Au/GaAs polarizer exhibiting a fairly good polarization control and maintaining low thresholds.
author_names: Toshikazu Mukaihara

N Ohnoki

Yusuke Hayashi

Fumio Koyama

Kenichi Iga
title: Polarization control of vertical cavity surface emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector
venue: Proceedings of IEEE 14th International Semiconductor Laser Conference
year: 1994

abstract: Abstract A microcavity surface emitting (SE) laser is very attractive for future optoelectronic applications such as optical parallel processing and optical interconnections. In order to realize such a low threshold SE laser, micro fabrication providing a low damage etch is one of important issues. We have introduced a reactive ion etch (RIE) and reactive ion beam etch (RIBE) technique to fabricate a tiny dielectric multilayer reflector and micro resonator for surface emitting lasers. In most of SE laser structures, a SiO2/TiO2 dielectric multilayer reflector or semiconductor multilayer mirror is used as high reflective mirrors. However, it has been difficult to fabricate the microcavity with steep side walls by wet chemical etching since each material has different etching rates. Dry etch techniques for multilayer structures, especially for GaInAsP/InP semiconductors, have not been fully studied.
author_names: Akihiro Matsutani

Fumio Koyama

Kenichi Iga
title: Micro dry etching process for vertical cavity surface emitting lasers
year: 2008

abstract: The surface emitting laser is one of the leading candidates for a light source supporting next generation ultrahigh speed optical linking techniques. However, in surface emitting lasers, especially for the single mode elements, the challenges include increasing the single mode output and stabilizing the polarization direction, and thus the technique for controlling the polarization and transverse modes is important. In this study, we propose a surface emitting laser with a metal nanoscale aperture array whose permeability shows a strong polarization dependence, formed on a p type semiconductor multilayered film reflector, as a new method for controlling the polarization and transverse modes, and in addition, we explain the potential of its polarization and transverse mode control. (c) 2007 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(3) 49 56, 2007; Published online in Wiley InterScience (www.interscience.wiley. com) DOI 10.1002/ecjb.20261
author_names: Jiro Hashizume

Fumio Koyama
title: Polarization and transverse mode control of vertical cavity surface emitting lasers with metal nano structure
year: 2007

abstract: We present the modeling and the experimental result of a micro machined vertical cavity surface emitting laser with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional vertical cavity surface emitting lasers (VCSELs)
author_names: Masanori Nakahama

Hayato Sano

Norihiko Nakata

Akihiro Matsutani

Fumio Koyama
title: Giant Wavelength Temperature Dependence of a Micro Machined Vertical Cavity Surface Emitting Laser with a Thermally Actuated Cantilever Structure
year: 2012