Query: Single crystal growth of semiconductor from metallic solutions

Candidate papers:

abstract: Preface PART I: Fundamentals Chapter 1: Introduction Chapter 2: Fundamentals and Phase Changes Chapter 3: Metallic Solution Growth Techniques Chapter 4: Crystal Growth Modeling PART II: Numerical Simulations Chapter 5: Liquid Phase Epitaxy Chapter 6: Liquid Phase Electroepitaxy Chapter 7: Travelling Heater Method Chapter 8: Liquid Phase Diffusion Bibliography
author_names: Sadik Dost

Brian Lent
title: Single Crystal Growth of Semiconductors from Metallic Solutions
year: 2006

abstract: In order to study the metallic ferromagnetism induced by electron doping in the narrow gab semiconductor FeSb$_2$ single crystals of FeSb$_2$ Fe$_{1 x}$Co$_x$Sb$_2$ $0 \le x \le 0.5$ and FeSb$_{2 y}$Te$_y$ $0 \le y \le 0.4$ were grown by a simplified self flux method. From powder x ray diffraction (XRD) patterns, wavelength dispersive x ray spectroscopy (WDX) and x ray Laue diffraction, pure and doped high quality single crystals, within the selected solubility range, show only the orthorhombic $Pnnm$ structure of FeSb$_2$ with a monotonic change in lattice parameters with increasing the doping level. In consistence with the model of nearly ferromagnetic small gap semiconductor, the energy gap of FeSb$_2$ Pauli paramagnet gradually collapses by electron doping before it closes at about $x$ or $y$ 0.15 and subsequent itinerant electron anisotropic ferromagnetic states are observed with higher doping levels. A magnetic phase diagram is established and discussed in view of proposed theoretical scenarios.
author_names: Mohamed A Kassem

Yoshikazu Tabata

Takeshi Waki

Hiroyuki Nakamura
title: Crystal growth and metallic ferromagnetism induced by electron doping in FeSb$_2$
year: 2020

abstract: Single crystal growth that invented by Jan Czochralski, was essentially used in AEG laboratory in 1916. Further development was about obtaining bulk crystals according to matching of the crystallization velocity and pulling rate. Gomperz improved the Czochralski process by changing die, crucible, and cooling system in 1922. One year later, Goens and Gruneisen applied different method to obtain crystal having certain orientation. Henry Walter from Bells Laboratory designed a new furnace and succeeded about crystal rotation, producing non metallic and enhancing dimensions. After the WWII with invention of contact transistors, importance of the Czochralski method significantly increased. Using microprocessors provided automatic control of crystal growing process. In the end of 1960s, the process of single crystal technique became similar to today's process. Research and development activities on single crystal processes have been continued due to necessity of improving semiconductor technology. In this study, manufacturing of single crystal, Czochralski method, its parameters, and historical developments have been discussed in detail.
author_names: Ayberk Yenice
title: Historical Development of Czochralski Process and Single Crystal Growth
year: 2019

abstract: The photochemical growth of metallic particles on relaxor ferroelectric tetragonal tungsten bronze strontium barium niobate (SBN) is reported in this work. Silver and gold particles were deposited on the unpoled (001) and the (100) surfaces of single crystal SBN:60 and SBN:61 via reduction of silver nitrate and gold chloride solutions, respectively, under UV illumination. Wavelength dependent experiments reveal that differences in particle deposition on the unpoled (001) and (100) surfaces are primarily due to the optical absorption of the UV light and not due to the surface termination or local ferroelectric domain structure. Particle deposition on electric field poled (001) surfaces is enhanced on positive domains and is suppressed on negative domains. Unusual particle deposition was observed on the perimeter of domains obtained from incomplete switching of the unpoled (001) surface. On the basis of our experimental observations, we propose a band diagram for the SBN interface and we discuss the underly.
author_names: Eftihia Barnes

Erik M Alberts

L Christopher Mimun

Jonathon Brame

Christopher M Warner

Ashley R Harmon

Aimee R Poda
title: Photoinduced Metallic Particle Growth on Single Crystal Relaxor Ferroelectric Strontium Barium Niobate
year: 2018

abstract: NH4I has been proven to be a promising cosolvent for cuprous iodide (CuI) single crystal growth from aqueous solutions by the temperature reduction method. In our work, as compared with NH4Cl and NH4Br, NH4I offers more advantages for single crystal growth, such as by remarkably increasing the solubility and growth rate of CuI crystals, effectively reducing the impurity concentration, and enhancing the crystal quality and crystallinity. A regular, centimeter sized, high optical quality single crystal was successfully obtained using NH4I as a cosolvent. The electronic and optical properties of the as grown crystal were characterized by Hall effect measurements and optical transmission and photoluminescence spectra, respectively. The results demonstrated that the CuI crystal is conductive (high p type mobility of 12.81 cm2 V 1 s 1) and transparent (great transmittance over 80%
author_names: Lv Yangyang

Zhihuang Xu

Liwang Ye

Zhaojun Zhang

Genbo Su

Xinxin Zhuang
title: Large g CuI semiconductor single crystal growth by a temperature reduction method from an NH4I aqueous solution
year: 2015

abstract: Single crystals of Bis (glycine) Strontium Chloride (BGSC) were grown by means of slow evaporation process by using analar grade Glycine and Strontium Chloride Hexahydrate as a parent compound from its aqueous solution at room temperature. The final chemical composition, formed were metallic light colorless block, about the size of 28 mm x 9 mm x 8 mm. A single crystal x ray diffraction study revealed an ordered superstructure with orthorhombic symmetry that could be assigned to the space group Pbcn. The structure in BGSC, revealed in the electron density distribution was analyzed by the direct methods (SHELXS 2014) and refined by least squares full matrix method (SHELXL 2014) The crystal structure, including anisotropic atomic displacement parameters for each atom and isotropic atomic displacement parameters for hydrogen atom, was refined to R1 0.0395, wR2 0.0776 using 1097 independent reflections. The FTIR spectrum of BGSC confirms the protonation of amino groups and the different molecular groups present in BGSC vibrate in different modes. Reverse Indentation Size Effect (RISE) was revealed in BGSC in the micro hardness analysis using Vicker's micro hardness analysis. DTA and DSC results ruled out the possibility of structural change independent of mass change. The AFM studies shows fine nano size fiber like structure of the grown crystals.
author_names: S R Balaji

T Balu

Thanjavur Renganathan Rajasekaran
title: Single crystal growth, structure refinement and the properties of Bis(glycine) Strontium Chloride
year: 2018

abstract: Abstract A single crystal of the non centrosymmetric low temperature modification of Tl2CdSnSe4 (space group I 4 2m) was grown, for the first time, and its electronic and optical properties were studied from both experimental and theoretical viewpoints. The Tl2CdSnSe4 crystal was grown from the solution melt by vertical Bridgman Stockbarger method. Centimeter dimensions of the crystal allow its application in practice. The bandgap energy, Eg 1.32 eV, estimated from the optical absorption coefficient agrees well with the value of Eg 1.29 eV calculated from the photosensitivity measurements. X ray photoelectron spectroscopy (XPS) was used to investigate the electronic structure and charge states of atoms composing the crystal under consideration. To detect the best agreement of the curve of total densities of states (DOS) with the experimental XPS spectrum of valence electrons of Tl2CdSnSe4, we performed theoretical calculations within a density functional theory (DFT) framework treating different models for exchange correlation (XC) potential. Our findings yield that the best agreement of the experimental and theoretical distributions of the valence electronic states is derived when using in the computation procedure for XC potential the modified Becke Johnson potential in the form of Tran Blaha (TB mBJ) which involves also the Hubbard parameter U for strongly correlated d electrons and spin orbit coupling (SOC) effect (TB mBJ U SOC model) Based on this approach, we calculated partial densities of states, energy band dispersion, and main optical constants of Tl2CdSnSe4. Importantly, the TB mBJ U SOC model reveals the Eg value which is close to those determined experimentally; therefore, scissors correction adjustment is not required when performing DFT calculations of the optical constants in such a case. The present experimental XPS measurements of the treated with middle energy Ar+ ions Tl2CdSnSe4 crystal surface and the theoretical DFT calculations data indicate, in spite of its rather hazardous chemical elements, thallium and cadmium, the crystal surface is rather stable and, coupled with suitable energy band gap, makes quaternary selenide under discussion a very promising material for using in thin film solar cells and optoelectronics as well as in highly efficient photocatalytic devices.
author_names: Tuan V Vu

A A Lavrentyev

B V Gabrelian

Andrii Selezen

L V Piskach

G L Myronchuk

M Denysyuk

V A Tkach

Khang D Pham

Oleg Yu Khyzhun
title: Crystal growth, electronic and optical properties of Tl2CdSnSe4, a recently discovered prospective semiconductor for application in thin film solar cells and optoelectronics
year: 2021

abstract: Halide perovskites are promising semiconductor materials for optoelectronics. One of their unique features is the synthesis, that could be performed by the crystallization from the solution. This method is fast, but practically couldn't be optimized due to the strongly non equilibrium conditions of crystal growth. Another quality limitation is the typical incorporation of organic solvent molecules into crystals when perovskite crystallization is performed from solution with organic solvent. Here we report an alternative method of perovskite single crystal growth based on the counterdiffusion of reagents in the gel medium. This counterdiffusion in gel crystallization (CGC) method is based on the difference of solubility between perovskites and lead halide in the corresponding halide acid, HX. The difference of solubility between perovskites and lead halide leads to the formation of perovskite single crystals of sufficiently large size with an excellent optical quality at constant room temperature. Particularly, here we report the growth of MAPbI3 and MAPbBr3 halide perovskite single crystals (MA CH3NH3 by the counterdiffusion of the organicsolvent free reagents in the U tube filled with the silica gel. Their photoluminescence spectra recorded at 4 K demonstrate the excitonic resonances with the full width 2.5 meV, which proves their excellent optical quality. The proposed method can be used in fabrication of high quality halide perovskite single crystals for both fundamental research, and for applications where the absence of defects is a critical requirement.
author_names: Nikita I Selivanov

Aleksei O Murzin

Vsevolod I Yudin

Yury V Kapitonov

Alexei V Emeline
title: Counterdiffusion in gel growth of high optical and crystal quality MAPbX3 (MA CH3NH3+ X I Br lead halide perovskite single crystals
year: 2021

abstract: Growth of semiconductor single crystals under electric and magnetic fields is of interest to increase and better control of crystal growth rate, to suppress and control the adverse effect of natural convection and to obtain better mixing in the growth melt (liquid solution) for better crystal uniformity, which all are favorable conditions for a prolonged growth of high quality crystals. To this end, in parallel to well designed experiments, modeling is essential to shed light on various aspects of these growth processes and also to better understand the transport phenomena involved. In this article the models developed over the years, mostly based on Professor Gerard Maugin's well known contributions to "electromagnetic interactions" are briefly presented for "solution growth" conducted under electric and magnetic fields. Basic and constitutive equations of a binary electromagnetic continuum mixture are specialized for two important solution growth techniques Liquid Phase Electroepitaxy (LPEE) and Travelling Heater Method (THM) As an application, an LPEE growth of GaAs bulk crystals under a strong static magnetic field is considered. Experimental results, that have shown that the growth rate under an applied static magnetic field is also proportional to the applied magnetic field and increases with the field intensity level, are predicted from these models. The contribution of a third order material constant in LPEE is also predicted from these models. The prediction of increasing growth rate in THM growth under rotating magnetic fields from modeling was verified by experiments.
author_names: Sadik Dost
title: Modeling Semiconductor Crystal Growth Under Electromagnetic Fields
year: 2018

abstract: Organic single crystals are an established part of the emerging field of organic optoelectronics, because they provide an ideal platform for the studies of the intrinsic physical properties of organic semiconductors. As organic crystals have low melting temperatures and high vapor pressures and are soluble in numerous organic solvents, both solution and gas phase methods can be used for crystal growth. The nature of the individual molecules and the interactions between molecules determine which growth method is preferred for particular materials. Organic semiconductors with very low decomposition or melting temperatures can be grown from solutions, whereas semiconductors with high vapor pressures can be grown using physical vapor transport methods. High quality crystals can be obtained using both methods. Crystal growth and crystal engineering of multicomponent organic compounds are emerging fields that can provide a variety of new materials with different physical properties. The growth of large crystals from the melt by zone melting, the Bridgman, or the Czochralski methods has been used to produce stable materials used in wafer manufacturing or large scintillator detectors. In this article, single crystal growth methods for organic semiconductors are discussed with the aim of preparing high quality specimens for determination of the basic properties of organic semiconductors.
author_names: Hui Jiang

Christian Kloc
title: Single crystal growth of organic semiconductors
year: 2013