Query: High power laser direct modulation

Candidate papers:

abstract: The direct modulation of high power semiconductor laser driver that is composed of the current modulation circuit and the over current protection circuit is introduced, two direct modulation circuits with different modulation output current amplitude are designed and the direct modulation of characteristics is analyzed, providing the output current waveform of the direct modulation of high power semiconductor laser. In this paper, a new modulation output current with a peak current of 9.5A is designed with bias current of 0.8A and the modulation current bandwidth of 2.56MHz. The width of the modulation current pulse keeps stable after widening. When the input signal is voltage pulse with uniform pulse width, it can output current pulse with uniform pulse width. And the modulation output current with a peak current of 9.5A is designed with bias current of 0.8A and the modulation current bandwidth of 5MHz. We have a theoretical study on the dynamic characteristics of direct modulation of semiconductor laser. We also have done some experiments on the basis of the simulation, the experimental results show that the output pulse laser intensity and the pulse laser modulation signal width change with changing the width of the pulse, and the actual modulated output pulse laser has a certain time delay with respect to the modulated signal.
author_names: Weipeng Wang

Yingtian Xu

Xiaohui Ma

Yong-gang Zou

Linbao Hou

Li Han

Yulong Wu

Dan Wang

Lushuang Ding
title: Study on the direct modulation characteristics of high power semiconductor laser
venue: 2015 International Conference on Optoelectronics and Microelectronics (ICOM)
year: 2015

abstract: 95oC, 25 Gbps direct modulation of a high power (15mW) 1.3 um InGaAIAs DFB laser is developed for the first time. The device will be a key for 4 channel CWDM uncooled light sources used in the lower power consumption 100 GbE subsystems.
author_names: T Fukamachi

Takashi Shiota

Katsuji Haibara-gun Kitatani

Takuma Ban

Yasunobu Matsuoka

Reiko Mita

Toshiki Sugawara

S Tanaka

Kazunori Shinoda

Koichiro Adachi

Masahiro Aoki
title: 95 oC uncooled and high power 25 Gbps direct modulation of InGaAlAs ridge waveguide DFB laser
venue: 2009 35th European Conference on Optical Communication
year: 2009

abstract: Aiming to realize high speed optical transmitters for isolator free telecommunication systems, 1.3 mm p modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 mm long cavity have been reported. Compared with the un doped QD laser as a reference, the p doped QD laser emits at ground state, with an ultra low threshold current and a high maximum output power. The p doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large signal direct modulation rate and a 7.8 GHz 3dB bandwidth. In addition, the p doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond 9 dB.
author_names: Xia-Yida MaXueer

Yiming He

Zunren Lv

Zhongkai Zhang

Hongyu Chai

Dan Lu

Xiao-Guang Yang

Tao Yang
title: 1.3 mm p Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance
year: 2020

abstract: We report a high modulation efficiency two electrode tapered laser with a record 0.81 W output optical modulation amplitude for 70 mA applied current swing under 700 Mb/s direct modulation. In addition the device shows a record 40.5 W/A static modulation efficiency.
author_names: C H Kwok

Mo Xia

Richard Vincent Penty

Ian H White

Nicolas Michel

Mike Ruiz

Michel Krakowski

Michel Calligaro

Michel Lecomte

Olivier Parillaud

H Odriozola

J M Garcia-Tijero

Ignacio Esquivias
title: Two electrode high power tapered laser with up to 40.5 W/A static modulation efficiency and 700 Mb/s direct modulation capability
venue: 2009 Conference on Optical Fiber Communication incudes post deadline papers
year: 2009

abstract: An integrated laser source to a silicon photonics circuit is an important requirement for optical interconnects. We present direct modulation of a heterogeneously integrated distributed feedback laser on and coupled to a silicon waveguide. We demonstrate a 28 Gb/s pseudo random bit sequence non return to zero data transmission over 2 km non zero dispersion shifted fiber with a 1 dB power penalty. Additionally, we show 40 Gb/s duobinary modulation generated using the bandwidth limitation of the laser for both back to back and fiber transmission configurations. Furthermore, we investigate the device performance for the pulse amplitude modulation (PAM 4) at 20 GBd for high speed short reach applications.
author_names: Amin Abbasi

Christos Spatharakis

Giannis Kanakis

Nuno Sequeira Andre

Hadrien Louchet

Andrew Katumba

Jochem Verbist

Hercules Avramopoulos

Peter Bienstman

Xin Yin

Johan Bauwelinck

Gunther Roelkens

Geert Morthier
title: High Speed Direct Modulation of a Heterogeneously Integrated InP/SOI DFB Laser
venue: Journal of Lightwave Technology
year: 2016

abstract: We demonstrate high speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high speed visible light communication setup. Record high 4 Gbps free space data transmission rate was achieved at room temperature.
author_names: Chang-Mi Lee

Chong Zhang

Michael Cantore

Robert Michael Farrell

Sang Ho Oh

Tal Margalith

James S Speck

Shuji Nakamura

John E Bowers

Steven P Denbaars
title: 4 Gbps direct modulation of 450 nm GaN laser for high speed visible light communication.
venue: Optics express
year: 2015

abstract: Multi band power allocation for NG PON downlink transmission is experimentally demonstrated when implementing AMOOFDM with direct modulation of a linear laser. Multi user power and bit allocation allows the users datarates to be balanced according to a target QoS.
author_names: Ahmed Gharba

Meryem Ouzzif

Jerome Le Masson

Philippe Chanclou

Naveena Genay

Benoit Charbonnier

Emmanuel Grard

V Rodrigues

T Duong

Maryline Helard
title: Multi band power allocation in AMOOFDM high data rate NG PON downlink transmission direct modulation of linear laser
venue: 2010 Conference on Optical Fiber Communication (OFC/NFOEC) collocated National Fiber Optic Engineers Conference
year: 2010

abstract: We demonstrate high speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high speed visible light communication setup. Record high 4 Gbps free space data transmission rate was achieved at room temperature. (c)2015 Optical Society of America OCIS codes: (060.2605) Free space optical communication; (060.4080) Modulation; (140.7300) Visible lasers; (250.5960) Semiconductor lasers. References and links 1. S. Nakamura, M. Senoh, and T. Mukai, "P GaN/N InGaN/N GaN double heterostructure blue light emitting diodes," Jpn. J. Appl. Phys. 32(2) L8 L11 (1993) 2. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting," Nat. Photonics 3(4) 180 182 (2009) 3. L. Grobe, A. Paraskevopoulos, J. Hilt, D. Schulz, F. Lassak, F. Hartlieb, C. Kottke, V. Jungnickel, and K. Langer, "High speed visible light communication systems," IEEE Commun. Mag. 51(12) 60 66 (2013) 4. J. D. McKendry, D. Massoubre, S. Zhang, B. R. Rae, R. P. Green, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, "Visible light communications using a CMOS controlled micro light emitting diode array," J. Lightwave Technol. 30(1) 61 67 (2012) 5. S. Zhang, S. Watson, J. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, "1.5 Gbit/s multi channel visible light communications using CMOS controlled GaN based LEDs," J. Lightwave Technol. 31(8) 1211 1216 (2013) 6. J. D. McKendry, R. P. Green, A. E. Kelly, Z. Gong, B. Guilhabert, D. Massoubre, E. Gu, and M. D. Dawson, "High speed visible light communications using individual pixels in a micro light emitting diode array," IEEE Photon. Technol. Lett. 22(18) 1346 1348 (2010) 7. S. Zhang, S. Watson, J. McKendry, D. Massoubre, A. Cogman, E. Gu, R. K. Henderson, A. E. Kelly, and M. D. Dawson, "1.5 Gbit/s multi channel visible light communications using CMOS controlled GaN based LEDs," J. Lightwave Technol. 31(8) 1211 1216 (2013) 8. D. Tsonev, H. Chun, S. Rajbhandari, J. McKendry, S. Videv, E. Gu, M. Haji, S. Watson, A. E. Kelly, G. Faulkner, M. D. Dawson, H. Haas, and D. O'Brian, "3 Gb/s single LED OFDM based wireless VLC link using a gallium nitride mLED," IEEE Photon. Technol. Lett. 26(7) 637 640 (2014) 9. H. Chun, P. Manousiadis, S. Rajbhandari, D. A. Vithanage, G. Faulkner, D. Tsonev, J. D. McKendry, S. Videv, E. Xie, E. Gu, M. D. Dawson, H. Haas, G. A. Turnbull, I. D. Samuel, and D. O'Brian, "Visible light communication using a blue GaN mLED and fluorescent polymer color converter," IEEE Photon. Technol. Lett. 26(20) 1041 1135 (2014) 10. D. Tsonev, S. Videv, and H. Haas, "Towards a 100 Gb/s visible light wireless access network," Opt. Express 23(2) 1627 1637 (2015) 11. S. Watson, M. Tan, S. P. Najda, P. Perlin, M. Leszczynski, G. Targowski, S. Grzanka, and A. E. Kelly, "Visible light communications using a directly modulated 422 nm GaN laser diode," Opt. Lett. 38(19) 3792 3794 (2013) 12. K. A. Denault, M. Cantore, S. Nakamura, S. P. DenBaars, and R. Seshadri, "Efficient and stable laser driven white lighting," AIP Adv. 3(7) 072107 (2013) 13. J. E. Bowers, "High speed semiconductor laser design and performance," Solid State Electron. 30(1) 1 11 (1987) 14. L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits, 2nd ed. (Wiley Interscience, 2012) #237857 $15.00 USD Received 13 Apr 2015; revised 23 May 2015; accepted 25 May 2015; published 10 Jun 2015 (C) 2015 OSA 15 Jun 2015 Vol. 23, No. 12 DOI:10.1364/OE.23.016232 OPTICS EXPRESS 16232
author_names: Chang-Mi Lee

Chong Zhang

Michael Cantore

Robert Michael Farrell

Sang Ho Oh

Tal Margalith

James S Speck

Shuji Nakamura

John E Bowers

Steven P Denbaars
title: Gbps direct modulation of 450 nm GaN laser for high speed visible light communication
year: 2015

abstract: Terahertz communication technology can provide abundant frequency resources, strong confidentiality, antijamming capability, communication tracking capability and the ability to achieve highspeed data transmissions and can serve as an important technical method for high speed communications in the future. Among these terahertz communication technologies, terahertz direct modulation technology is a key means to achieve low system complexity and power consumption. In this paper, a review and outlook of terahertz direct modulation technology are proposed from the aspects of high electron mobility transistor based terahertz direct modulation, parallelswitch terahertz direct modulation, diode based terahertz direct modulation, quantum cascade laser based terahertz direct modulation and new material based terahertz direct modulation. We hope through this paper that more readers can gain knowledge about the development and challenges of terahertz direct modulation technology for high speed communication systems, thus promoting the development of high speed terahertz communication technology based on direct modulation.
author_names: Tianchi Zhou

Yaxin Zhang

Hongxin Zeng

Zhiyong Tan

Xilin Zhang

Lan Wang

Zhi Chen

Juncheng Cao

Kaijun Song

Ziqiang Yang
title: Terahertz direct modulation techniques for high speed communication systems
venue: China Communications
year: 2021

abstract: We investigated the limitations in output power generated by a high power narrow linewidth Raman fiber amplifier. The pump was produced by a kW level all fiber Yb doped amplifier emitting at 1060 nm, whose seed linewidth could be changed. The Raman seed was a narrow linewidth signal at 1110 nm co propagating with the laser at 1060 nm. The main Raman conversion occurred in the passive fiber at the amplifier output. We identified cross phase modulation (XPM) as a main reason for broadening of the Raman light by using different pump sources, which is a first limitation. An improved setup was limited at approximately 600 W of Stokes output power by a threshold like onset of a transverse mode instability. Since the instability was not observed without a Stokes seed and the temperatures of the active fiber with and without Stokes seed are equal, this constitutes the first direct observation of transverse mode instabilities (TMI) induced by SRS in a passive fiber.
author_names: Victor Distler

Friedrich Moller

Maximilian Strecker

Gonzalo Palma-Vega

Till Walbaum

Thomas Schreiber

Andreas Tunnermann
title: High power narrow linewidth Raman amplifier and its limitation
venue: LASE
year: 2020