Query: Physics of Semiconductor Devices

Candidate papers:

author_names: H L Grubin
title: The physics of semiconductor devices
venue: IEEE Journal of Quantum Electronics
year: 1979

abstract: Density of States function, g(E) Fermi Dirac Distribution function, f(E) Distribution Function and Fermi Energy Equilibrium Distribution of Electrons and Holes n0 and p0 Equation Intrinsic carrier concentration Fermi level for Intrinsic Semiconductor Extrinsic Semiconductor Position of the Fermi Level of the Extrinsic Semiconductor Non Degenerated Semiconductor Variation of EF with Doping Concentration and with Temperature Compensated Semiconductor Statistics of donors and acceptors Formula to remember Question Bank Solved problems Assignment
author_names: S M Sze
title: PHYSICS OF SEMICONDUCTOR DEVICES
year: 2007

author_names: S M Sze
title: Physics of semiconductor devices
year: 1969

author_names: Simon M Sze

Kwok K Ng
title: Physics of Semiconductor Devices: Sze/Physics
year: 2006

author_names: S M Sze
title: Physics of semiconductor devices /2nd edition/
year: 1981

abstract: S M Sze 1981 Chichester: John Wiley xii 868 pp price PS28 The first edition of this book has become a 'standard' indeed it is often treated as the 'Bible' on the subject. The second edition is timely because the earlier volume has been overtaken by events in the fast growing world of microelectronic and optoelectronic devices.
author_names: Peter James Dobson
title: Physics of Semiconductor Devices (2nd edn)
year: 1982

author_names: Massimo Rudan
title: Physics of Semiconductor Devices, Second Edition
year: 2018

author_names: R K Sharma

D S Rawal
title: The Physics of Semiconductor Devices
year: 2019

abstract: Preface. Introduction. PART I: SEMICONDUCTOR PHYSICS. Energy Bands and Carrier Concentration in Thermal Equilibrium. Carrier Transport Phenomena. PART II: SEMICONDUCTOR DEVICES. p n Junction. Bipolar Transistor and Related Devices. MOSFET and Related Devices. MESFET and Related Devices. Microwave Diodes, Quantum Effect, and Hot Electron Devices. Photonic Devices. PART III: SEMICONDUCTOR TECHNOLOGY. Crystal Growth and Epitaxy. Film Formation. Lithography and Etching. Impurity Doping. Integrated Devices. Appendix A: List of Symbols. Appendix B: International Systems of Units (SI Units) Appendix C: Unit Prefixes. Appendix D: Greek Alphabet. Appendix E: Physical Constants. Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K. Appendix G: Properties of Si and GaAs at 300 K. Appendix H: Derivation of the Density of States in Semiconductor. Appendix I: Derivation of Recombination Rate for Indirect Recombination. Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant Tunneling Diode. Appendix K: Basic Kinetic Theory of Gases. Appendix L: Answers to Selected Problems. Index.
author_names: S M Sze
title: Semiconductor Devices: Physics and Technology
year: 1985

abstract: We present here and in the companion paper (Part II) a general framework for the modeling of semiconductor device variability through the physics based analysis of the small change sensitivity. We consider a very general class of dynamic device operation, i.e. the periodic or quasi periodic large signal (LS) time varying regime, and we evaluate the sensitivity of both dc and harmonic components of the device dynamic working point with respect to process or physical device parameters. The proposed technique is based on the linearization of the physics based device model around a nominal parameter, and extends to the dynamic case the already established Green's function approach to the numerically efficient dc sensitivity analysis. As an example of application, we consider a class A GaAs MESFET microwave power amplifier; the sensitivity of the LS working point with respect to doping and gate work function variations is evaluated through the proposed approach and compared with the result of repeated LS amplifier analyses, showing that the numerically efficient small change sensitivity approach provides reliable predictions for parameter variations up to 10% of the nominal value.
author_names: Simona Donati Guerrieri

Fabrizio Bonani

Francesco Bertazzi

Giovanni Ghione
title: A Unified Approach to the Sensitivity and Variability Physics Based Modeling of Semiconductor Devices Operated in Dynamic Conditions Part I: Large Signal Sensitivity
venue: IEEE Transactions on Electron Devices
year: 2016