Query: Carrier density dependence of Auger recombination

Candidate papers:

abstract: Abstract Auger recombination (AR) is usually assumed to depend on the electron density n and the hole density p like n2p (or np2) But, there are deviations from these rules, mainly in degenerate semiconductors. Studying this case the following results were obtained: 1. Normal AR which is only possible in narrow gap semiconductors goes approximately as np. 2. Phonon assisted AR which predominates in "normal" gap semiconductors (Eg 1 eV) has the "usual" density dependence n2p. 3. Second order AR with two Auger electrons goes with n 7 3 p (instead of an expected dependence n3p) Moreover, the density dependence may be influenced by the screening of the Coulomb interaction and by the strength of the excitation.
author_names: Albert Haug
title: Carrier density dependence of Auger recombination
year: 1978

abstract: We report on the temperature and carrier density dependence of non radiative recombination processes in an InAs/GaSb/InAs type II W laser emitting at 3.4 mm. The measurements were performed with a sub picosecond photoluminescence upconversion set up in a temperature range between 10 K and 300 K and with initial excited carrier densities in the range between 2.96 x 1018 cm 3 and 4.44 x 1019 cm 3. The excellent growth quality of the device is indicated by a Shockley Read Hall coefficient of 2.2 x 108 s 1 at 10 K and 1.1 x 108 s 1 at 300 K. The cubic Auger recombination (AR) coefficient decreases in a characteristic manner with increasing initial excited carrier density. From a convergence equation, we obtained a cubic AR coefficient C03 of 1.2 x 10 28 cm6 s 1 for low carrier densities at 200 K. For low temperatures, due to degenerate carrier population of valence and conduction bands, a sublinear increase of the reciprocal lifetime versus carrier density is measured. With rising temperature the sublinear increase becomes linear and at 300 K a quadratic AR coefficient C02 of 1.73 x 10 11 cm3 s 1 was determined.
author_names: Jan Oliver Drumm

Birgit Vogelgesang

G Hoffmann

C Schwender

N Herhammer

Henning Fouckhardt
title: Temperature and carrier density dependence of Auger recombination in a 3.4 um InAs/GaSb/AlSb type II laser device
year: 2002

abstract: Nitride light emitting diodes are a promising solution for efficient solid state lighting, but their performance at high power is affected by the efficiency droop problem. Previous experimental and theoretical work has identified Auger recombination, a three particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination.
author_names: Emmanouil Kioupakis

Qimin Yan

Daniel Steiauf

Chris G van de Walle
title: Temperature and carrier density dependence of Auger and radiative recombination in nitride optoelectronic devices
year: 2013

abstract: The usual quadratic dependence of the reciprocal Auger lifetime on the carrier density holds only if either the doping density or the excitation density is strongly dominant. If neither quantity dominates, exponents smaller than 2 in the carrier density dependence are possible; there are observed in some experiments.
author_names: Albert Haug
title: Remarks on the carrier density dependence of Auger recombination
year: 1988

abstract: This study investigated the temperature dependence of the Auger recombination coefficient (C) in an InGaN/GaN blue multiple quantum well (MQW) light emitting diode structure at temperatures between 20 and 100degC. The temperature dependence of C was determined by fitting the measured external quantum efficiency (EQE) data using an analytical model or numerical simulation. In the analytical model, the carrier density in InGaN MQWs was assumed to be constant and independent of temperature. In contrast, the inhomogeneous carrier distribution in MQWs and its temperature dependent redistribution were included in the numerical simulation. When the analytical model was employed to fit the EQE curve, C decreased with increasing temperature. On the other hand, when the numerical simulation was employed, C increased steadily by ~31% as the temperature was increased from 20 to 100degC. We found that the temperature dependent carrier distribution is important to consider when determining the temperature dependence of the Auger recombination coefficient in InGaN MQW structures.
author_names: Han-Youl Ryu

Geun-Hwan Ryu

Chibuzo Onwukaeme

Byongjin Ma
title: Temperature dependence of the Auger recombination coefficient in InGaN/GaN multiple quantum well light emitting diodes.
venue: Optics express
year: 2020

abstract: SUMMARY AND CONCLUSIONS In summary, we have measured and calculated Augerrates for a 4 mm band gap type II superlattice designed forsuppression of Auger recombination and intersubband ab sorption at room temperature. The calculated Auger rates,which include superlattice Umklapp processes, were ob tained using Fermi's golden rule for the transition rates andthe full temperature dependent, nonparabolic band structure.Umklapp processes, which provide roughly half of the totalAuger rate, are found to be necessary to describe the experi mental results. The experimental Auger rates were deter mined from time resolved PL upconversion as a function ofoptically injected carrier density and lattice temperature. Wefind excellent agreement between measured and calculatedrates for direct Auger transitions at all temperatures and car rier densities, which suggests that phonon assisted Augerprocesses do not contribute significantly to the overall non radiative recombination rate.As discussed in more detail in Ref. 12, the 300 K Augercoefficient of 2.9310
author_names: D J Jang

Michael E Flatte

C H Grein

Jonathon T Olesberg

Thomas C Hasenberg

Thomas F Boggess
title: TEMPERATURE DEPENDENCE OF AUGER RECOMBINATION IN A MULTILAYER NARROW BAND GAP SUPERLATTICE
year: 1998

abstract: This work reports on measurements of the Auger recombination coefficients in silicon wafers with pump probe thermoreflectance techniques operating at two different excitation rates: 250 kHz (low repetition rate) and 80 MHz (high repetition rate) The different excitation frequencies give rise to different thermoreflectance signals in the Si samples, which is ascribed to the excited number density in the conduction band. In the low repetition rate case, the excited carriers recombine via Auger processes before the next pump excitation is absorbed. However, in the high repetition rate case, the rate in which the pump excitations are absorbed at the sample surface is higher than the Auger recombination rate, indicating that the excited carrier densities in the high repetition rate experiments are much higher than in the low repetition rate measurements even though the pump fluences are comparable. This is ascribed to pulse accumulation in the high repetition rate measurements, and is quantified with rate equ.
author_names: Patrick E Hopkins

Edward V Barnat

Jose Luis Cruz-Campa

Robert K Grubbs

Murat Okandan

Gregory Nolan Nielson
title: Excitation rate dependence of Auger recombination in silicon
year: 2010

abstract: From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7 3.2 \mu$m wavelength range. From hydrostatic pressure measurements, the non radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 \mu$m. A strong increase with decreasing mid infrared wavelength 2 \mu$m) indicates the prominent role of inter valence Auger transitions to the split off hole band (CHSH process) Above 2 \mu$m, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of \leq$ 1x10$ {16}$cm${4}$s$ 1} at 2.1 \mu$m to ~8x10${16}$cm${4}$s$ 1} at 3.2 \mu$m.
author_names: Timothy D Eales

Igor P Marko

Alfred Rodney Adams

Jerry R Meyer

Igor Vurgaftman

Stephen J Sweeney
title: Quantifying Auger recombination coefficients in type I mid infrared InGaAsSb quantum well lasers
year: 2020

abstract: Superatom solids are promising for optoelectronic applications, owing to their tunable structural and electronic properties; yet, the electronic transport properties of these materials have been largely unexplored. Here, we report the Auger recombination dynamics of free carriers in two representative two dimensional superatomic semiconductors, Re6Se8Cl2 and Mo6S3Br6, studied using ultrafast terahertz photoconductivity measurements. The fast Auger recombination dynamics are characterized by a cubic dependence of the Auger rate on carrier density in Re6Se8Cl2 and a quadratic dependence in Mo6S3Br6. The effective lifetimes of Mo6S3Br6 0.5 ps) are over an order of magnitude shorter than those 20 ps) of Re6Se8Cl2. These results highlight the variability of the optoelectronic properties of different superatom solids.
author_names: Heejae Kim

Kihong Lee

Avalon H Dismukes

Bonnie Choi

Xavier Roy

Xiaoyang Zhu

Mischa Bonn
title: Charge carrier scattering and ultrafast Auger dynamics in two dimensional superatomic semiconductors
year: 2020

abstract: Carrier lifetime has been measured by the luminescence decay of a 1.3 mm InGaAsP layer excited by a mode locked YAG laser at 1.06 mm. The measurements have been done as a function of excitation intensity for nearly three orders of magnitude of carrier concentration (4x1016 2x1019 cm 3) and for different temperatures (between 32 and 346 K) At low and moderate carrier density, the lifetime t follows the variation with excitation of the theoretical radiative lifetime. At high carrier density (above 1018 cm 3) the carrier decay rate increases more rapidly than the radiative one and around room temperature this can be accounted for by an additional recombination mechanism whose variation with excitation is typical of an Auger process. The Auger coefficient (Ca=2.6x10 29 cm6 s 1) does not vary with temperature within experimental uncertainty. This suggests that though Auger recombination is for a large part responsible for the low T0 value of 1.3 mm InGaAsP lasers, the temperature dependence of the Auger coeff.
author_names: Bernard Sermage

Niloy K Dutta
title: Temperature dependence of carrier lifetime and Auger recombination in 1.3 mm InGaAsP
year: 1985