Query:  for 3-D Sensing

Candidate papers:

abstract: As VCSELs and edge emitting lasers empower new functionalities in handhelds, the automotive sector and elsewhere, it's increasingly important to understand the differences between these laser options.
title: Semiconductor Lasers for 3 D Sensing
venue: Optics and Photonics News
year: 2019

abstract: Abstract Distributed feedback lasers near 1050 nm have many applications such as high resolution imaging in medical, production inspection and 3 D sensing. In this paper, we demonstrate a purely gain coupled distributed feedback laser based on periodic electric injection. By using simple fabrication process steps, the same as those for Fabry Perot lasers except for periodic current injection windows, we realized lasing single longitude mode in F P structure due to surface periodic electric injection only. The device operates with a single mode CW output of 51.9 mW power at 250 mA. The slope efficiency is 0.24 W/A, and the side mode suppression radio is greater than 35 dB. The spectra maintain good single mode output characteristics over a tuning range greater than 3.48 nm within only 9 degC.
author_names: Dezheng Ma

Yongyi Chen

Yu-Xin Lei

Peng Jia

Feng Gao

Yugang Zeng

Lei Liang

Yu-E Song

Chunkao Ruan

Xia Liu

Li Qin

Yongqiang Ning

Lijun Wang
title: 1045 nm purely gain coupled semiconductor laser based on periodic electric injection
year: 2020

abstract: Laser triangulation based Surface Mapping has been used in a limited number of applications for many years, both for reverse engineering and manufacturing diagnostics. The first systems became available in the mid 1970's, but were film based and therefore useful only for the mapping of complex surfaces in situations where fast tu.rnaround was not required. During the 1980's, film based laser triangulation systems were replaced by equipment using semiconductor detectors (CCD array, diode array, or silicon position sensing device) for the camera's imaging function, which could provide 3 D surface data almost instantaneously. This, in turn, led to the development of software packages that could quickly digest the 3 D data for controlling or diagnosing manufacturing processes or to implement the reverse engineering function. The stand alone production oriented equipmen i available today includes solder joint inspection machines and semiconductor device lead measurement (coplanarity, etc. machines which are coming on line in the U.S. Europe, and the Pacific Rim. Also becoming available, albeit at a slower pace, are machines that can be used to accurately scan small to medium size parts
author_names: Howard K Stern
title: LASER BASED 3 D SURFACE MAPPING FOR MANUFCTURING DIAGNOSTICS AND REVERSE ENGINEERING
year: 1992

abstract: We have developed a new 3 D hybrid integration technology of complementary metal oxide semiconductors, microelectromechanical systems (MEMS) and photonics circuits for optoelectronic heterogeneous integrated systems. We have overcome the fabrication difficulties of optoelectromechanical and microfluidics hybrid integration. In order to verify the applied 3 D hybrid integration technology, we fabricated a 3 D optoelectronic multichip module composed of large scale integration (LSI) MEMS, and photonics devices. The electrical chips of amplitude shift keying (ASK) LSI, passive, and pressure sensing MEMS were mounted onto an electrical Si interposer with through silicon vias (TSVs) and microfluidic channels. Photonics chips of vertical cavity surface emitting lasers and photodiodes were embedded into an optical Si interposer with TSVs. The electrical and optical interposers were precisely bonded together to form a 3 D optoelectronic multichip module. The photonics and electrical devices could communicate via TSVs. The photonics devices could be connected via an optical waveguide formed onto the optical interposer. Microfluidic channels were formed into the interposer by a wafer direct bonding technique for heat sinking from high power LSIs. In this paper, we evaluated the basic functions of individual chips of LSI, MEMS, and photonics devices as they were integrated into the 3 D optoelectronic multichip module to verify the applied 3 D hybrid integration technology. LSI, passive, MEMS, and photonics devices were successfully implemented. The 3 D hybrid integration technology is capable of providing a powerful solution for realizing optoelectronic heterogeneous integrated systems.
author_names: Kang-Wook Lee

Akihiro Noriki

Kouji Kiyoyama

Takanori Fukushima

T Tanaka

Mitsumasa Koyanagi
title: Three Dimensional Hybrid Integration Technology of CMOS, MEMS, and Photonics Circuits for Optoelectronic Heterogeneous Integrated Systems
venue: IEEE Transactions on Electron Devices
year: 2011

abstract: lmost all of the information related applications of lasers to date have been based on a manipulation of the amplitude of the laser radiation. This is in sharp contrast to the field of radio frequency (RF) electronics where the phase of the radio wave plays a key role. Specifically, phase lock loop (PLL) systems are the main enablers of many applications wireless communication, CDMA, FM demodulation and clock recovery, to name a few. The semiconductor laser (SCL) is the transmission source in optical communication networks, and has a number of unique properties, such as its very large current frequency sensitivity, fast modulation response, small volume and compatibility with electronic circuits. Research in our group has focused on using these unique properties to import to optics and optical communication many of the important applications of RF electronics. This phase control, when combined with the wide band width of optical waves, can enable a new generation of photonic and RF systems. With support from the Lee center, we are studying many novel applications of op toelectronic phase and frequency control. These applications include: distributed low cost sensor networks; high power electronically steerable optical beams; arbitrary waveform synthesis; and wideband, precisely controlled swept frequency laser sources for 3 D imaging, chemical sensing and spectroscopy. Optical phase lock loops (OPLLs) are negative feedback control systems where a SCL acts as a " slave " os cillator whose phase and frequency are locked to the phase and frequency of a high quality " master " laser. The main differences between an OPLL and electronic PLLs are the wide linewidth and non uniform frequency tuning characteristics of typical SCLs as compared to electronic oscillators. We have developed novel phase locking architectures to overcome these effects and achieve stable phase locking. When the loop is in lock, the phase coherence of the high quality master laser is transferred to the slave laser. This " coherence cloning " is shown in Figure 1, where the frequency noise of the slave laser is reduced by about two orders of magnitude within the loop bandwidth 1. The improved coherence enables the replacement of expensive narrow linewidth lasers by inexpensive, compact and efficient coherence cloned SCLs in long range sensing networks. We have also pioneered the application of phase locked lasers to phase controlled coherent arrays for power combination and beam steering. Individual SCLs when locked to a common master laser are coherent relative to each other, and their outputs can therefore be coherently combined. The resulting combined output light from
author_names: Amnon Yariv
title: a Optoelectronic Phase lock Techniques for the Phase and Frequency Control of a Semiconductor Laser by

abstract: A heterogeneously integrated InP on silicon fast tunable filtered feedback laser is demonstrated. The laser device consists of a main Fabry Perot cavity connected to an integrated arrayed waveguide grating of which the outputs form external cavities in which semiconductor optical amplifiers can be switched to provide single mode operation and tunability. The laser can operate at four different wavelengths whereby switching between each wavelength channel is done within one nanosecond. For each wavelength channel 12.5 Gbit/s NRZ OOK direct modulation is demonstrated. The combination of fast wavelength switching with straightforward wavelength control and high speed direct modulation characteristics make the demonstrated laser structure very attractive for use in optical packet or burst switching systems. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: (140.3600) Lasers, tunable, (230.7408) Wavelength filtering devices, (250.5300) Photonic integrated circuits. References and links 1. M. A. Mestre, J. M. Estaran, P. Jenneve, H. Mardoyan, I. T. Monroy, D. Zibar, and S. Bigo, "Novel coherent optical OFDM based transponder for optical slot switched networks," J. Lightw. Technol. 34(8) 1851 1858 (2016) 2. D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, "Nonlinear optics for high speed digital information processing," Science 286(5444) 1523 1528 (1999) 3. D. J. Blumenthal, J. E. Bowers, L. Rau, H. F. Chou, S. Rangarajan, W. Wang, and K. N. Poulsen, "Optical signal processing for optical packet switching networks," IEEE Commun. Mag. 41(2) 23 29 (2003) 4. M. A. Ettabib, C. Lacava, Z. Liu, A. Bogris, A. Kapsalis, M. Brun, P. Labeye, S. Nicoletti, D. Syvridis, D. J. Richardson, and P. Petropoulos, "Wavelength conversion of complex modulation formats in a compact SiGe waveguide," Opt. Express 25(4) 3252 3258 (2017) 5. Q. Huang, Y. K. Yeo, and L. Zhou, "A single stage optical load balanced switch for data centers," Opt. Express 20(22) 25014 25021 (2012) 6. C. K. Chan, K. L. Sherman, and M. Zirngibl, "A fast 100 channel wavelength tunable transmitter for optical packet switching," IEEE Photon. Technol. Lett. 13(7) 729 731 (2001) 7. Y. When, H. Jin, M. Chen, and V. C. M. Leung, "Enabling technologies for future data center networking: a primer," IEEE Network. 27(4) 8 15 (2013) 8. S. Srinivasan, A. Y. Liu, D. Liang, and J. E. Bowers, "Silicon lasers and photonic integrated circuits," in Fibre Optic Communication (Springer, 2017) pp. 739 797. 9. G. Roelkens, A. Abbasi, P. Cardile, U. Dave, A. De Groote, Y. De Koninck, S. Dhoore, X. Fu, A. Gassenq, N. Hattasan, Q. Huang, S. Kumari, S. Keyvaninia, B. Kuyken, L. Li, P. Mechet, M. Muneeb, D. Sanchez, H. Shao, T. Spuesens, A. Z. Subramanian, S. Uvin, M. Tassaert, K. Van Gasse, J. Verbist, R. Wang, Z. Wang, J. Zhang, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Morthier, R. Baets, and D. Van Thourhout, "III V on silicon photonic devices for optical communication and sensing," Photonics 2(3) 969 1004 (2015) 10. S. Dhoore, G. Roelkens, and G. Morthier, "III V on silicon three section DBR laser with over 12 nm continuous tuning range," Opt. Lett. 42(6) 1121 1124 (2017) 11. S. Dhoore, L. Li, A. Abbasi, G. Roelkens, and G. Morthier, "Demonstration of a discretely tunable III V on silicon sampled grating DFB laser," IEEE Photon. Technol. Lett. 28(21) 2343 2346 (2016) 12. G. Kurczveil, J. M. Heck, J. D. Peters, J. M. Garcia, D. Spencer, and J. E. Bowers, "An integrated hybrid silicon multiwavelength AWG laser," IEEE J. Sel. Topics Quantum Electron. 17(6) 1521 1527 (2011) 13. S. Keyvaninia, S. Verstuyft, S. Pathak, F. Lelarge, G. H. Duan, D. Bordel, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Roelkens, and D. Van Thourhout, "III V on silicon multi frequency lasers," Vol. 26, No. 7 2 Apr 2018 OPTICS EXPRESS 8059 #322517 https:/doi.org/10.1364/OE.26.008059 Journal (c) 2018 Received 13 Feb 2018; revised 14 Mar 2018; accepted 14 Mar 2018; published 20 Mar 2018 Opt. Express 21(11) 13675 13683 (2013) 14. B. Docter, J. Pozo, S. Beri, I. V. Ermakov, J. Danckaert, M. K. Smit, and F. Karouta, "Discretely tunable laser based on filtered feedback for telecommunication applications," IEEE J. Sel. Topics Quantum Electron. 16(5) 1405 1412 (2010) 15. D. M. Kane, and K. A. Shore, Unlocking dynamical diversity: optical feedback effects on semiconductor lasers (Wiley, 2005) 16. H. Erzgraber, and B. Krauskopf, "Dynamics of a filtered feedback laser: influence of the filter width," Opt. Lett. 32(16) 2441 2443 (2007) 17. S. Keyvaninia, S. Verstuyft, L. Van Landschoot, F. Lelarge, G. H. Duan, S. Messaoudene, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Morthier, D. Van Thourhout, and G. Roelkens, "Heterogeneously integrated III V/silicon distributed feedback lasers," Opt. Lett. 38(24) 5434 5437 (2013) 18. W. Bogaerts, S.K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, "Siliconon insulator spectral filters fabricated with CMOS technology," IEEE J. Sel. Topics Quantum Electron. 16(1) 33 44 (2010) 19. L. A. Coldren, S. W. Corzine, and M. L. Masanovic, Diode Lasers and Photonic Integrated Circuits (Wiley, 2012) 20. D. Vermeulen, Y. De Koninck, Y. Li, E. Lambert, W. Bogaerts, R. Baets, and G. Roelkens, "Reflectionless grating couplers for Silicon on Insulator photonic integrated circuits," Opt. Express 20(20) 22278 22283 (2012) 21. B. Docter, J. Pozo, I. V. Ermakov, X. J. M. Leijtens, F. Karouta, S. Beri, J. Danckaert, and M. K. Smit, "Integrated filtered feedback tunable laser with enhanced control of feedback phase," in Proceedings of Symposium IEEE Photonics Benelux Chapter (IEEE, 2010) pp. 285 288. 22. J. Cho, C. Xie, and P. J. Winzer, "Analysis of soft decision FEC on non AWGN channels," Opt. Express 20(7) 7915 7928 (2012) 23. G. Morthier, R. Schatz, and O. Kjebon, "Extended modulation bandwidth of DBR and external cavity lasers by utilizing a cavity resonance for equalization," IEEE J. Quantum Electron. 36(12) 1468 1475 (2000) 24. A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G. H. Duan, G. Roelkens, and G. Morthier, "Direct and electroabsorption modulation of a III V on silicon DFB laser at 56 Gb/s," IEEE J. Sel. Topics Quantum Electron. 23(6) 1 7 (2017)
title: 12 5 Gbit s discretely tunable InP on silicon filtered feedback laser with sub nanosecond wavelength switching times
year: 2018

abstract: A Robot Assisted Crucible charging System (RACS) has been proposed in the automation of the crucible packing process in the CZ semiconductor wafer production procedure, involving the delicate manipulation and placement of polycrystalline silicon nuggets, into a stiff and fragile fused silica crucible. Two of the key elements in this design have been described in this thesis, a non intrusive nugget and crucible surface geometry acquisition module, and a nugget placement and packing algorithm. A non contact 3 D surface geometry measuring system has been developed based on the principal of optoelectronic active laser triangulation after a thorough investigation of a range of non intrusive range sensing methodologies. This system measures both the nugget geometry profile and the internal crucible geometry profile, with a resolution of 1mm. Additionally, a novel on line, multidimensional, flexible packing algorithm has been developed based on a principal of "Virtual Trial and Error" and extensively tested by simulation for cost function optimization. Four general cost function principals are tested in six critical combinations, in a two dimensional simulation of the packing algorithm using random non convex polygons. The final cost function choice of lowest fit is shown to have the best performance index. For general comparison, the algorithm with all six packing schemes, has been applied to random sized rectangular object packing. This final packing algorithm scheme has been applied to a simulation of the 3D case, that compares well with the expected performance of human packing. These key technology components and requirements have been successfully demonstrated in order to provide for a feasible solution for a Robot Assisted Crucible charging System. Thesis Supervisor: Dr. Steven Dubowsky Professor of Mechanical Engineering Acknowledgements I would like to thank my academic and research advisor, Prof. S. Dubowsky, for guiding me over the course of the past two years, for pushing me to reach farther, for teaching me what it takes, for believing in and trusting me, and for giving me my freedom to explore the fascinating world of machine vision. It is through his tutelage and his friendship that I have learnt how to be strong in the face of adversity and how to see the big picture. His drive and love for technology has helped us transform a concept into reality and see the fruits of our efforts come to life. Next, I would like to thank Shit Etsu Handotai, Co. Ltd. of Japan, for giving us the opportunity and resources necessary in order to carry out the research presented here, and help explore and refine a new window of technology application. I would also like to thank my project colleagues Joe Calzaretta, Tony Leier and Melissa Tata, for providing the support and friendship during both the tough and facile times over the past two years. Many thanks to Mike Mulqueen for being the big brother that I never quite had, who understood and cared through times of both sadness and joy, who was always there when I needed him and for whom I will always be there. It is Prof. B. Andereck and Prof. L.T. Dillman, of Ohio Wesleyan University, Prof. Erik K. Antonsson and Prof. J Burdick, of Caltech, that helped guide and set me on the track of academic research. It is through their direction, patience and support that I have learned to believe in myself and in realizing the dreams that otherwise would have been unachievable. With their friendship and brilliance that, over the course of the past several years, I have learnt how never to give up and to continue on to the next level in search for excellence. And yet none of this could have ever been done without my kind yet strong mother, and my firm but loving father. It is through their love and optimism for life that I have learnt how never to feel weak, how never to feel down, how never to be boastful, and how never to accept defeat. It is they who have taught me love, patience, courage, discipline and honor. It is they who have taught me that the challenges of life are what makes it all worthwhile. It is they who have taught me how to be a man and that there is always another round. Finally, I would like to thank the Almighty, for blessing me with the opportunities to explore this wonderful world of ours. This thesis is dedicated to the memories of my grandmother Sati H. Sujan.
author_names: Vivek A Sujan
title: The sensor based manipulation of irregularly shaped objects with special application to the semiconductor industry
year: 1998

abstract: This thesis explores the design, construction, and applications of the optoelectronic swept frequency laser (SFL) The optoelectronic SFL is a feedback loop designed around a swept frequency (chirped) semiconductor laser (SCL) to control its instantaneous optical frequency, such that the chirp characteristics are determined solely by a reference electronic oscillator. The resultant system generates precisely controlled optical frequency sweeps. In particular, we focus on linear chirps because of their numerous applications. We demonstrate optoelectronic SFLs based on vertical cavity surface emitting lasers (VCSELs) and distributed feedback lasers (DFBs) at wavelengths of 1550 nm and 1060 nm. We develop an iterative bias current predistortion procedure that enables SFL operation at very high chirp rates, up to 10^16 Hz/sec. We describe commercialization efforts and implementation of the predistortion algorithm in a stand alone embedded environment, undertaken as part of our collaboration with Telaris, Inc. We demonstrate frequency modulated continuous wave (FMCW) ranging and three dimensional (3 D) imaging using a 1550 nm optoelectronic SFL. We develop the technique of multiple source FMCW (MS FMCW) reflectometry, in which the frequency sweeps of multiple SFLs are "stitched" together in order to increase the optical bandwidth, and hence improve the axial resolution, of an FMCW ranging measurement. We demonstrate computer aided stitching of DFB and VCSEL sweeps at 1550 nm. We also develop and demonstrate hardware stitching, which enables MS FMCW ranging without additional signal processing. The culmination of this work is the hardware stitching of four VCSELs at 1550 nm for a total optical bandwidth of 2 THz, and a free space axial resolution of 75 microns. We describe our work on the tomographic imaging camera (TomICam) a 3 D imaging system based on FMCW ranging that features non mechanical acquisition of transverse pixels. Our approach uses a combination of electronically tuned optical sources and low cost full field detector arrays, completely eliminating the need for moving parts traditionally employed in 3 D imaging. We describe the basic TomICam principle, and demonstrate single pixel TomICam ranging in a proof of concept experiment. We also discuss the application of compressive sensing (CS) to the TomICam platform, and perform a series of numerical simulations. These simulations show that tenfold compression is feasible in CS TomICam, which effectively improves the volume acquisition speed by a factor ten. We develop chirped wave phase locking techniques, and apply them to coherent beam combining (CBC) of chirped seed amplifiers (CSAs) in a master oscillator power amplifier configuration. The precise chirp linearity of the optoelectronic SFL enables non mechanical compensation of optical delays using acousto optic frequency shifters, and its high chirp rate simultaneously increases the stimulated Brillouin scattering (SBS) threshold of the active fiber. We characterize a 1550 nm chirped seed amplifier coherent combining system. We use a chirp rate of 5*10^14 Hz/sec to increase the amplifier SBS threshold threefold, when compared to a single frequency seed. We demonstrate efficient phase locking and electronic beam steering of two 3 W erbium doped fiber amplifier channels, achieving temporal phase noise levels corresponding to interferometric fringe visibilities exceeding 98%
author_names: Arseny Vasilyev
title: The Optoelectronic Swept Frequency Laser and Its Applications in Ranging, Three Dimensional Imaging, and Coherent Beam Combining of Chirped Seed Amplifiers
year: 2013

abstract: This paper outlines the challenges and benefits of applying silicon based photonic techniques in the 2 to 5 mm midinfrared (MIR) wavelength range for chem. bio physical sensing, medical diagnostics, industrial process control, environmental monitoring, secure communications, Ladar, active imaging, and high speed communications at 2 mm. Onchip passive and active components, mostly waveguided, will enable opto electronic CMOS or BiCMOS integrated "circuits" for system on a chip applications such as spectroscopy and lab on a chip. Volume manufacture in a silicon foundry is expected to yield low cost (or even disposable) chips with benefits in size weight power and ruggedness. This is "long wavelength optoelectronic integration on silicon" which we call LIOS. Room temperature operation appears feasible, albeit with performance compromises at 4 to 5 mm. In addition to the electronics layer (which may include RF wireless) a 3 D LIOS chip can include several inter communicating layers utilizing the photonic, plasmonic, photoniccrystal and opto electro mechanical technologies. The LIOS challenge can be met by (1) discovering new physics, (2) employing "new" IV and III V alloys, (3) scaling up and modifying telecom components, and (4) applying nonlinearoptical wavelength conversion in some cases. This paper presents proposals for MIR chip spectrometers employing frequency comb and Ge blackbody sources. Active heterostructures employing Si, Ge, SiGe, GeSn and SiGeSn are key for laser diodes, photodetectors, LEDs, switches, amplifiers, and modulators that provide totally monolithic foundry integration, while numerous III V semiconductor MIR devices within the InGaAsSb and InGaAsP families offer practical hybrid integration on Si PICs. Interband cascade and quantum cascade lasers on Ge waveguides are important in this context.
author_names: Richard A Soref
title: Group IV photonics for the mid infrared
venue: Photonics West Optoelectronic Materials and Devices
year: 2013

abstract: VOLUME 1: PRINCIPLES. Foreword. A Principles. A/1 Basic laser principles. A/2/1 Laser resonators. A/2/2 Waveguide resonators. A/3 Laser beam control. A/4 Nonlinear optics. A/5 Interferometry and Polarisation. A/6 Waveguide theory. A/7 Optical detection and noise. A/8 Numerical Modeling. VOLUME 2: LASER DESIGN AND LASER SYSTEMS. B Laser Design, Fabrication and Properties. B/1 Solid State Lasers. B/1/1 Transition Metal Ion Lasers Cr3+ B/1/2 Transition Metal Ion Lasers Other Than Cr3+ B/1/3 Rare Earth Ion Lasers Nd3+ B/1/4 Rare Earth Ion Lasers Near Infrared. B/1/5 Rare Earth Ions Lasers Miscellaneous: Ce3+ U3+ divalent, etc. B/1/6 Lasers Based on Nonlinear Effects. B/1/7 Solid State Raman Lasers. B/1/8 Color Center Lasers. B/2 Semiconductor/diode lasers. B/2/1 Basic principles of laser diodes. B/2/2 Spectral control in laser diodes. B/2/3 High speed laser diodes. B/2/4 High power laser diodes and laser diode arrays. B/2/5/1 Visible laser diodes: Properties of III V red emitting laser diodes. B/2/5/2 Visible laser diodes: Properties of Blue Laser Diodes. B/2/6 Vertical cavity surface emitting lasers. B/2/7 Long wavelength laser diodes. B/2/8 Diode lasers for switching and signal processing. B/3 Gas lasers. B/3/1 CW CO2, CO and N2O and TEA CO2 lasers. B/3/2 Excimer, F2, H2 and N2 lasers. B/3/3 Copper and gold vapor lasers. B/3/4/1 Chemical lasers: COIL. B/3/4/2 Chemical lasers: HF/DF. B/3/5 Ar+ laser. B/3/6 He Ne laser. B/3/7 He Cd laser. B/3/8 Optically pumped mid IR lasers: NH3, C2H2. B/3/9 Far IR lasers: HCN, H2O. B/4 Fiber and waveguide lasers. B/4/1 Fiber Lasers. B/4/2 High Power Fiber Lasers. B/4/3 DFBG Fiber Raman Lasers. B/4/4 Soliton lasers. B/4/5 Erbium and other doped fiber amplifiers. B/4/6 High power waveguide lasers. B/5 Other lasers. B/5/1 Free electron lasers. B/5/2 X ray lasers. B/5/3 Liquid organic dye lasers. B/5/4 Solid organic dye lasers. C Laser System Design. C/1 Components. C/1/1 Optical components. C/1/2 Optical control elements. C/1/3 Adaptive optics and phase conjugate reflectors. C/1/4 Opto mechanical parts. C/1/5/1 Power conditioning: Supplies for driving diodes (semiconductor lasers) C/1/5/2 Power conditioning: Supplies for driving gas discharges (gas and solid state lasers) C/1/5/3 Power conditioning: Supplies for driving flash tubes and arc lamps for solid state lasers. C/2 Optical pulse generation. C/2/1 Quasi CW and modulated beams. C/2/2 Short pulses. C/2/3 Ultrashort pulses. C/3 Frequency conversion and filtering. C/3/1 Harmonic generation materials and methods. C/3/2 Optical parametric oscillators and amplifiers. C/3/3 Laser stabilisation for precision measurements. C/4 Beam delivery systems. C/4/1 Basic principles. C/4/2 Free space optics. C/4/3 Fiber optic beam delivery. C/4/4 Positioning and scanning systems. C/5 Laser beam characterisation and measurement. C/5/1 Beam propagation parameters. C/5/2 Detectors. C/5/3 Power and energy measurement. C/5/4 Irradiance and phase distribution measurement. C/6 Laser safety: Introduction. C/6 Laser safety. VOLUME 3: Applications. D Applications: Case Studies. D/1 Materials Processing. D/1 Introduction. D/1/1 Welding. D/1/2 Cutting. D/1/3 Marking. D/1/4 Drilling. D/1/5 Photolithography. D/1/6 Micromachining. D/1/7 Rapid Manufacturing. D/1/8 Deposition of thin films. D/2 Optical Measurement Techniques. D/2 Introduction. D/2/1 Fundamental length metrology. D/2/2 Laser velocimetry. D/2/3 Laser vibrometers. D/2/4 Electronic speckle pattern interferometry (ESPI) D/2/5 Optical fibre hydrophones. D/2/6 Optical fibre Bragg grating sensors for strain measurement. D/2/7 High speed imaging. D/2/8 Particle sizing. D/3 Medical. D/3 Introduction. D/3/1 Light Tissue Interactions. D/3/2 Therapeutic Applications: Introduction. D/3/2/1 Therapeutic Applications: Opthalmology. D/3/2/2 Therapeutic Applications: Refractive Surgery. D/3/2/3 Therapeutic Applications: Photodynamic Therapy. D/3/2/4 Therapeutic Applications: Tumour Therapy. D/3/2/5 Therapeutic Applications: Dermatology. D/3/2/6 Therapeutic Applications: Lasers in Vascular Surgery. D/3/2/7 Therapeutic Applications: Hardtissue/Dentistry. D/3/2/8 Therapeutic Applications: Free Electron Laser. D/3/3 Diagnostic Applications. D/3/4 Applications in Biology and Biotechnology. D/3/5 Laser Safety. D/4 Communications. D/4 Introduction. D/4/1 Basic point to point communications system. D/4/2 Long haul systems. D/4/3 Local area networks. D/4/4 Fibre to board/chip. D/4/5 Optical satellite communications. D/4/6 Smart Pixel Technologies and Optical Interconnects. D/5 Information storage. D/5 Introduction. D/5/1 Optical data storage. D/5/2 Lasers in printing. D/6 Spectroscopy. D/6 Introduction. D/6/1 Laser cooling and trapping. D/6/2 Ion trapping and laser applications to length and time metrology. D/6/3 Time resolved spectroscopy. D/7 Earth and environmental sciences. D/7 Introduction. D/7/1 Satellite laser ranging. D/7/2 Lidar for atmospheric remote sensing. D/8 Introduction. D/8/1 Lasers in Astronomy. D/9 Introduction. D/9/1 Holographic optical elements and computer generated holography. D/10 Plasmas. D/10/1 High Power Lasers for Plasma Physics. D/10/2 High power lasers and the extreme conditions that they can produce.
author_names: Colin E Webb

Julian David Clayton Jones
title: Handbook of laser technology and applications
year: 2004