Query: The growth of two-dimensional boron nitride

Candidate papers:

abstract: Heteroepitaxy Writ Thin A common method for creating a thin single crystal layer of a semiconductor for use in an electronic device is heteroepitaxy growing the layer on the face of a single crystal of a different material that acts as a template for assembly. Liu et al. (p. 163) now describe a similar process in which the edge of a graphene layer that was grown on a copper surface directs the assembly of a monolayer of hexagonal boron nitride. The boron nitride grew from inside edge of holes created in the graphene layer. The interface and the relative orientation of the two layers were determined by a variety of scanning microscopy and surface diffraction techniques. The orientation of a growing boron nitride film is determined by its graphene template and not the underlying substrate. By adapting the concept of epitaxy to two dimensional space, we show the growth of a single atomic layer, in plane heterostructure of a prototypical material system graphene and hexagonal boron nitride (h BN) Monolayer crystalline h BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one dimensional interface, or boundary. More important, the h BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.
author_names: Lei Liu

Jewook Park

David A Siegel

K F Mccarty

Kendal W Clark

Wan Deng

Leonardo A Basile

Juan Carlos Idrobo

An-Ping Li

Gong Gu
title: Heteroepitaxial Growth of Two Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
venue: Science
year: 2014

abstract: Two dimensional (2D) hexagonal boron nitride (h BN) is a promising candidate as a supporting substrate, a gate dielectric and a protecting layer for 2D electronic and photonic devices. Transition metals were usually adopted as substrates for the synthesis of 2D h BN, however, catalyst free growth of high quality h BN on dielectric substrates is still very challenging. Herein, we report the catalyst free growth of 2D h BN few layers on sapphire substrates by ion beam sputtering deposition (IBSD) We find that the h BN grown under conventional conditions is nonstoichiometric with an excess of B element, resulting in a large number of N vacancy defects and poor crystalline quality. The wafer scale high quality 2D h BN layers were synthesized on sapphire by the combination of surface nitridation and N+ sputtering. Furthermore, the 2D h BN few layers on sapphire were used to fabricate deep ultraviolet photodetectors, which exhibit better performance in comparison with the devices fabricated by the transferred h BN.
author_names: Menglei Gao

Junhua Meng

Yanan Chen

S Ye

Ye Wang

Congyu Ding

Yubo Li

Zhigang Yin

Xiangbo Zeng

Jingbi You

Peng Jin

Xingwang Zhang
title: Catalyst free growth of two dimensional hexagonal boron nitride few layers on sapphire for deep ultraviolet photodetectors
year: 2019

abstract: With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h BN) can be an ideal substrate for two dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition metal dichalcogenides. Further, stacking of the as grown 2D materials relative to h BN, thermal expansion matching between the deposited materials and h BN, electrical property of 2D materials on h BN have been discussed in detail.
author_names: Xinsheng Wang

Mongur Hossain

Zhongming Wei

Liming Xie
title: Growth of two dimensional materials on hexagonal boron nitride (h BN)
venue: Nanotechnology
year: 2019

abstract: Recent years have witnessed many advances in two dimensional (2D) hexagonal boron nitride (h BN) materials in both fundamental research and practical applications. This has ultimately been inspired by the unique electrical and optical properties, as well as the excellent thermal and chemical stability of h BN. However, controllable and scalable preparation of 2D h BN materials has been challenging. Very recently, the chemical vapour deposition (CVD) technique has shown great promise for achieving high quality h BN samples with excellent layer number selectivity and large area uniformity, considerably contributing to the latest advancements of 2D material research. In this tutorial review, we provide a systematic summary of the state of the art in the tailored production of 2D h BN on various substrates by virtue of CVD routes.
author_names: Jingyu Sun

Chen Lu

Yingze Song

Qingqing Ji

Xiuju Song

Qiucheng Li

Yanfeng Zhang

Liuyan Zhang

Jing Kong

Zhongfan Liu
title: Recent progress in the tailored growth of two dimensional hexagonal boron nitride via chemical vapour deposition.
venue: Chemical Society reviews
year: 2018

abstract: Hexagonal boron nitride (h BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene based applications. The development of h BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small 0.5 mm(2) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h BN films are unknown. Here, we report the growth and characterization of novel large area h BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal shape h BN domain observed is 35 mm(2) which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects.
author_names: Roland Yingjie Tay

Mark H Griep

Govind Mallick

Siu Hon Tsang

Ram Sevak Singh

Travis M Tumlin

E H T Teo

Shashi P Karna
title: Growth of large single crystalline two dimensional boron nitride hexagons on electropolished copper.
venue: Nano letters
year: 2014

abstract: Using variable temperature scanning tunneling microscopy (300 673 K) during chemical vapor deposition of two dimensional hexagonal boron nitride (hBN) on Pd(111) from borazine precursor at pressures up to 10 6 mbar, we identify the mechanisms leading to carpet like uphill or downhill growth across the Pd steps. Deposition at a higher rate and lower temperature promotes uphill growth via preferential attachment at the ascending and descending step edges, while lower deposition rate and higher temperature lead to downhill growth via nucleation and growth of islands on Pd terraces. We attribute this unusual growth behavior to differences in temperature dependent rates of hBN deposition at the steps vs. on the Pd terraces. Our results illustrate how growth mechanisms can be activated by a pair of parameters (substrate temperature and partial pressure of borazine) and provide new insights into the mechanisms underlying carpet like growth of hBN and other layered materials.
author_names: Pedro J Arias

Abbas Ebnonnasir

Cristian V Ciobanu

Suneel Kodambaka
title: Growth kinetics of two dimensional hexagonal boron nitride layers on Pd(111)
venue: Nano letters
year: 2020

abstract: Abstract Layered boron nitride materials are used as superb protective coatings and reinforcing materials due to their high mechanical strength and chemical inertness. Herein, we report on the synthesis of two dimensional boron nitride (2D BN) hierarchical nanostructures by a facile and efficient approach using boric acid (H3BO3) and hexamethylenetetramine (C6H12N4) as a reaction precursors. Our findings indicate that 2D hierarchical nanostructure was an assembling of BN quantum dots and exhibit varied wetting properties. The shape, size, and thickness of the BN quantum dots were well controlled by properly adjusting the growth parameters. With changing the temperature and other reaction conditions as well as ratios of reactants, the average size of BN quantum dots varies from 35 nm to 5 nm. Strong superhydrophobic properties with the contact angle of 155deg are obtained for 2D BN. These 2D BN nanostructure possesses the properties conflicting to carbon nanomaterials such as high temperature stability, high chemical inertness and intrinsically semiconducting and may find application in nanoelectronics, catalyst support, as a composite materials and self cleaning coatings etc. especially those working in harsh environment and at high temperature.
author_names: Saleem Abbas

Aumber Abbas

Zhenya Liu

Chengchun Tang
title: The two dimensional boron nitride hierarchical nanostructures: Controllable synthesis and superhydrophobicity
year: 2020

abstract: Hexagonal boron nitride, often entitled the 'white graphene' because of its large band gap, is one of the most important two dimensional (2D) materials and frequently investigated in context with stacked arrays of single 2D layers, so called van der Waals heterostructures. Here, we concentrate on the growth of hBN on the coinage metal surface Cu(1 1 1) Using low energy electron microscopy and diffraction, we investigate the self terminated growth of the first layer in situ and in real time. Most prominently, we find dendritic structures with three strongly preferred growth branches that are mostly well aligned with the Cu(1 1 1) substrate and exhibit a three fold symmetric shape. The observation of dendritic structures is very surprising since hBN was found to grow in compact, triangular shaped islands on many other metal substrates, in particular, on transition metal surfaces where it shows a much stronger interaction to the surface. We explain the unexpected dendritic growth by an asymmetry of the bonding energy for the two possible ways a borazine molecule can attach to an existing hBN island, namely either with one of its boron or one of its nitrogen atoms. We suggest that this asymmetry originates from different dehydrogenation states of the adsorbed borazine molecules and the hBN islands. We call this mechanism 'Dehydrogenation Limited Aggregation' since it is generic in the sense that it is merely based on different dehydrogenation energies for the involved building blocks forming the 2D layer.
author_names: Janina Felter

M Raths

Markus Franke

C Kumpf
title: In situ study of two dimensional dendritic growth of hexagonal boron nitride
venue: 2D Materials
year: 2019

author_names: Xingwang Zhang

Menglei Gao

Junhua Meng
title: Research Progress of Direct Growth of Two dimensional Hexagonal Boron Nitride on Dielectric Substrates
year: 2019

abstract: Abstract Two dimensional (2D) hexagonal boron nitride (h BN) is a fascinating material for variety of applications such as graphene based devices, transparent/bendable electronics, and deep ultraviolet emitters. However, its technological applications are contingent upon tunable and scalable growth. Here, we demonstrate reproducible and tunable growth of high quality h BN crystals on Cu via chemical vapor deposition (CVD) through a precise control of the BN precursor's flow during growth. We present synthesis of both epitaxially grown triangular flakes and large area continuous films with tunable thickness ranging from monolayer to 11 layer thick. Using a combination of electron microscopy imaging, spectroscopy, and diffraction analysis, we thoroughly study morphology, thickness, chemistry, grain size, and atomic structure of the grown h BN crystals. This study could pave the way for developing controlled and reproducible growth of high quality h BN crystals with tunable thickness and morphology.
author_names: Amin Azizi

Mohammed Abu AlSaud

Nasim Alem
title: Controlled growth and Atomic scale Characterization of Two dimensional hexagonal boron nitride crystals
year: 2018