Query: Nitride semiconductor devices principles and simulation

Candidate papers:

abstract: Preface. List of Contributors. Part 1 Material Properties. 1 Introduction (Joachim Piprek) 1.1 A Brief History. 1.2 Unique Material Properties. 1.3 Thermal Parameters. References. 2 Electron Bandstructure Parameters (Igor Vurgaftman and Jerry R. Meyer) 2.1 Introduction. 2.2 Band Structure Models. 2.3 Band Parameters. 2.4 Conclusions. References. 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes (Fabio Bernardini) 3.1 Why Spontaneous Polarization in III V Nitrides? 3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN. 3.3 Piezoelectric and Pyroelectric Effects in III V Nitrides Nanostructures. 3.4 Polarization Properties in Ternary and Quaternary Alloys. 3.5 Orientational Dependence of Polarization. References. 4 Transport Parameters for Electrons and Holes (Enrico Bellotti and Francesco Bertazzi) 4.1 Introduction. 4.2 Numerical Simulation Model. 4.3 Analytical Models for the Transport Parameters. 4.4 GaN Transport Parameters. 4.5 AlN Transport Parameters. 4.6 InN Transport Parameters. 4.7 Conclusions. References. 5 Optical Constants of Bulk Nitrides (Rudiger Goldhahn, Carsten Buchheim, Pascal Schley, Andreas Theo Winzer, and Hans Wenzel) 5.1 Introduction. 5.2 Dielectric Function and Band Structure. 5.3 Experimental Results. 5.4 Modeling of the Dielectric Function. References. 6 Intersubband Absorption in AlGaN/GaN Quantum Wells (Sulakshana Gunna, Francesco Bertazzi, Roberto Paiella, and Enrico Bellotti) 6.1 Introduction. 6.2 Theoretical Model. 6.3 Numerical Implementation. 6.4 Absorption Energy in AlGaN GaN MQWs. 6.5 Conclusions. References. 7 Interband Transitions in InGaN Quantum Wells (Jorg Hader, Jerome V. Moloney, Angela Thranhardt, and Stephan W. Koch) 7.1 Introduction. 7.2 Theory. 7.3 Theory Experiment Gain Comparison. 7.4 Absorption/Gain. 7.5 Spontaneous Emission. 7.6 Auger Recombinations. 7.7 Internal Field Effects. 7.8 Summary. References. 8 Electronic and Optical Properties of GaN based Quantum Wells with (1010) Crystal Orientation (Seoung Hwan Park and Shun Lien Chuang) 8.1 Introduction. 8.2 Theory. 8.2.1 Non Markovian gain model with many body effects. 8.3 Results and Discussion. 8.4 Summary. References. 9 Carrier Scattering in Quantum Dot Systems (Frank Jahnke) 9.1 Introduction. 9.2 Scattering Due to Carrier Carrier Coulomb Interaction. 9.3 Scattering Due to Carrier Phonon Interaction. 9.4 Summary and Outlook. References. Part 2 Devices. 10 AlGaN/GaN High Electron Mobility Transistors (Tomas Palacios and Umesh K. Mishra) 10.1 Introduction. 10.2 Physics based Simulations. 10.3 Conclusions. References. 11 Intersubband Optical Switches for Optical Communications (Nobuo Suzuki) 11.1 Introduction. 11.2 Physics of ISBT in Nitride MQWs. 11.3 Calculation of Absorption Spectra. 11.4 FDTD Simulator for GaN/AlGaN ISBT Switches. References. 12 Intersubband Electroabsorption Modulator (Petter Holmstrom) 12.1 Introduction. 12.2 Modulator Structure. 12.3 Model. 12.4 Results. 12.5 Summary. References. 13 Ultraviolet Light Emitting Diodes (Yen Kuang Kuo, Sheng Horng Yen, and Jun Rong Chen) 13.1 Introduction. 13.2 Device Structure. 13.3 Physical Models and Parameters. 13.4 Comparison Between Simulated and Experimental Results. 13.5 Performance Optimization. 13.6 Conclusion. References. 14 Visible Light Emitting Diodes (Sergey Yu. Karpov) 14.1 Introduction. 14.2 Simulation Approach and Materials Properties. 14.3 Device Analysis. 14.4 Novel LED Structures. 14.5 Conclusion. References. 15 Simulation of LEDs with Phosphorescent Media for the Generation of White Light (Norbert Linder, Dominik Eisert, Frank Jermann, and Dirk Berben) 15.1 Introduction. 15.2 Requirements for a Conversion LED Model. 15.3 Color Metrics for Conversion LEDs. 15.4 Phosphor Model. 15.5 Simulation Examples. 15.6 Conclusions. References. 16 Fundamental Characteristics of Edge Emitting Lasers (Gen ichi Hatakoshi) 16.1 Introduction. 16.2 Basic Equations for the Device Simulation. 16.3 Simulation for Electrical Characteristics and Carrier Overflow Analysis. 16.4 Perpendicular TransverseMode and Beam Quality Analysis. 16.5 Thermal Analysis. 16.6 Conclusions. References. 17 Resonant Internal Transverse Mode Coupling in InGaN/GaN/AlGaN Lasers (Gennady A. Smolyakov and Marek Osinski) 17.1 Introduction. 17.2 Internal Mode Coupling and the Concept of "Ghost Modes." 17.3 Device Structure and Material Parameters. 17.4 Calculation Technique. 17.5 Results of Calculations. 17.6 Discussion and Conclusions. References. 18 Optical Properties of Edge Emitting Lasers: Measurement and Simulation (Ulrich T. Schwarz and Bernd Witzigmann) 18.1 Introduction. 18.2 Waveguide Mode Stability. 18.3 Optical Waveguide Loss. 18.4 Mode Gain Analysis. 18.5 Conclusion. References. 19 Electronic Properties of InGaN/GaN Vertical Cavity Lasers (Joachim Piprek, Zhan Ming Li, Robert Farrell, Steven P. DenBaars, and Shuji Nakamura) 19.1 Introduction to Vertical Cavity Lasers. 19.2 GaN based VCSEL Structure. 19.3 Theoretical Models and Material Parameters. 19.4 Simulation Results and Device Analysis. 19.5 Summary. References. 20 Optical Design of Vertical Cavity Lasers (Wlodzimierz Nakwaski, Tomasz Czyszanowski, and Robert P. Sarzala) 20.1 Introduction. 20.2 The GaN VCSEL Structure. 20.3 The Scalar Optical Approach. 20.4 The Vectorial Optical Approach. 20.5 The Self consistent Calculation Algorithm. 20.6 Simulation Results. 20.7 Discussion and Conclusions. References. 21 GaN Nanowire Lasers (Alexey V. Maslov and Cun Zheng Ning) 21.1 Introduction. 21.2 Nanowire Growth and Characterization. 21.3 Nanowire Laser Principles. 21.4 Anisotropy of Material Gain. 21.5 Guided Modes. 21.6 Modal Gain and Threshold. 21.7 Conclusion. References. Index.
author_names: Joachim Piprek
title: Nitride semiconductor devices principles and simulation
year: 2007

abstract: Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2 D drift diffusion semi classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.
author_names: Gourab Sabui

Peter J Parbrook

Miryam Arredondo-Arechavala

Z John Shen
title: Modeling and simulation of bulk gallium nitride power semiconductor devices
year: 2016

abstract: 1. Introduction. 1.1 The Goal of Modeling. 1.2 The History of Numerical Device Modeling. 1.3 References. 2. Some Fundamental Properties. 2.1 Poisson's Equation. 2.2 Continuity Equations. 2.3 Carrier Transport Equations. 2.4 Carrier Concentrations. 2.5 Heat Flow Equation. 2.6 The Basic Semiconductor Equations. 2.7 References. 3. Proeess Modeling. 3.1 Ion Implantation. 3.2 Diffusion. 3.3 Oxidation. 3.4 References. 4. The Physical Parameters. 4.1 Carrier Mobility Modeling. 4.2 Carrier Generation Recombination Modeling. 4.3 Thermal Conductivity Modeling. 4.4 Thermal Generation Modeling. 4.5 References. 5. Analytical Investigations About the Basic Semiconductor Equations. 5.1 Domain and Boundary Conditions. 5.2 Dependent Variables. 5.3 The Existence of Solutions. 5.4 Uniqueness or Non Uniqueness of Solutions. 5.5 Sealing. 5.6 The Singular Perturbation Approach. 5.7 Referenees. 6. The Diseretization of the Basic Semiconductor Equations. 6.1 Finite Differences. 6.2 Finite Boxes. 6.3 Finite Elements. 6.4 The Transient Problem. 6.5 Designing a Mesh. 6.6 Referenees. 7. The Solution of Systems of Nonlinear Algebraic Equations. 7.1 Newton's Method and Extensions. 7.2 Iterative Methods. 7.3 Referenees. 8. The Solution of Sparse Systems of Linear Equations. 8.1 Direct Methods. 8.2 Ordering Methods. 8.3 Relaxation Methods. 8.4 Alternating Direction Methods. 8.5 Strongly Implicit Methods. 8.6 Convergence Acceleration of Iterative Methods. 8.7 Referenees. 9. A Glimpse on Results. 9.1 Breakdown Phenomena in MOSFET's. 9.2 The Rate Effect in Thyristors. 9.3 Referenees. Author Index. Table Index.
author_names: Siegfried Selberherr
title: Analysis and simulation of semiconductor devices
year: 1984

abstract: 3
author_names: Martin Lades
title: Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H SiC
year: 2000

abstract: This paper focuses on providing an improved and efficient alternative to electromechanical relays (EMRs) in view of the growing demand characteristics for an effective power multiplexing in induction heating applications. A major analytical approach to the design and implementation of bidirectional switches (BDSs) based on different power semiconductor technologies is presented, including thorough static and dynamic characterizations. Emerging gallium nitride high electron mobility transistors (GaN HEMTs) and silicon carbide (SiC) based devices are identified as potential candidates for the mentioned applications.
author_names: Manuel Fernandez

Xavier Perpina

Jose Rebollo

Miquel Vellvehi

David Sanchez

Tomas Cabeza

Sergio Llorente

Xavier Jorda
title: Solid State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices
venue: IEEE Transactions on Industrial Electronics
year: 2019

abstract: We propose a two dimensional (2D) tetragonal material: an yttrium nitride (t YN) monolayer, with a distinguished combination of mechanical and electronic properties based on first principles calculations. We find that the t YN monolayer is a low direct band gap semiconductor (0.55 eV) with strong anisotropic mechanical and electronic properties. We also identify that the t YN monolayer to be a 2D ferroelastic material with a reversible strain of about 14.4% indicating that the anisotropic properties of the t YN monolayer can be switched by applying external stress. Furthermore, the moderate switching barrier (33 meV/atom) of ferroelastic lattice rotation renders the switchable anisotropic properties accessible experimentally. These outstanding properties make the t YN monolayer a promising switchable anisotropic 2D material for electronic and mechanical applications.
author_names: Bo Xu

H Xiang

Jiang Yin

Yidong Xia

Zhiguo Liu
title: A two dimensional tetragonal yttrium nitride monolayer: a ferroelastic semiconductor with switchable anisotropic properties.
venue: Nanoscale
year: 2017

abstract: Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide. Technology CAD (TCAD) has proven a major impact on the optimization of silicon based device technologies. It is a logical follow up to provide accurate simulation tools, methods and models for GaN based device technologies that are benchmarked against hardware data. This work presents a systematic investigation of GaN HEMTs by TCAD, including process emulation, in plane and full stress simulation, and drift diffusion device simulation.
author_names: Stephan Strauss

A Erlebach

Tommaso Cilento

Denis Marcon

Steve Stoffels

Benoit Bakeroot
title: TCAD methodology for simulation of GaN HEMT power devices
venue: 2014 IEEE 26th International Symposium on Power Semiconductor Devices IC's (ISPSD)
year: 2014

abstract: Design and training principles have been proposed and tested for an artificial neural network based on metal oxide thin film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of neural network is implemented as a double layer perceptron with a weight matrix composed of 32 memristive devices. The network training algorithm takes into account technological variations of the parameters of memristive devices. Despite the limited size of weight matrix the developed neural network model is scalable and capable of solving nonlinear classification problems. The learning and functionality of the network are demonstrated by using its computer model for the classification of activity propagation directions in simulated neuronal culture.
author_names: Alexey N Mikhaylov

Oleg A Morozov

Pavel E Ovchinnikov

Ivan N Antonov

Alexey I Belov

Dmitry S Korolev

Alexander N Sharapov

Evgeniy G Gryaznov

Oleg N Gorshkov

Yana Pigareva

Alexey S Pimashkin

Sergey A Lobov

Victor B Kazantsev
title: One Board Design and Simulation of Double Layer Perceptron Based on Metal Oxide Memristive Nanostructures
venue: IEEE Transactions on Emerging Topics in Computational Intelligence
year: 2018

abstract: Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state of the art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.
author_names: Hiroshi Amano

Y Baines

Matteo Borga

T Bouchet

Paul R Chalker

Matthew Charles

K J Chen

Nadim Chowdhury

Rongming Chu

Carlo De Santi

Maria Merlyne De Souza

Stefaan Decoutere

Lea Di Cioccio

Bernd Eckardt

Takashi Egawa

Patrick J Fay

Joseph J Freedsman

Louis Guido

Oliver Haberlen

Geoff Haynes

Thomas Heckel

Dilini Hemakumara

Peter A Houston

Jie Hu

Mengyuan Hua

Qingyun Huang

Alex Q Huang

Sheng Jiang

Hiroji Kawai

Daniel M Kinzer

Martin Kuball

Ashwani Kumar

Kean Boon Lee

Xu Li

Denis Marcon

Martin Marz

Robert McCarthy

Gaudenzio Meneghesso

Matteo Meneghini

Erwan Morvan

Akira Nakajima

E M Sankara Narayanan

Stephen Oliver

Tomas Palacios

Daniel Piedra

Marc Plissonnier

Rekha Reddy

Min-Chul Sun

Iain G Thayne

A Torres

Nicola Trivellin

Vineet Unni

Michael J Uren

Marleen Van Hove

David J Wallis

Jingshan Wang

Jinqiao Xie

Shuichi Yagi

Shu Yun Yang

C Youtsey

Ruiyang Yu

Enrico Zanoni

Stefan Zeltner

Yuhao Zhang
title: The 2018 GaN power electronics roadmap
year: 2018

abstract: Hexagonal boron nitride (h BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out of plane and in plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h BN, with a thickness ranging from monolayer and bilayer to bulk. Both the ionic and electronic contribution to the dielectric response are computed. Our calculations show that the out of plane dielectric response for the transition metal dichalcogenides is dominated by its electronic component and that the dielectric constant increases with increasing chalcogen atomic number. Overall, the out of plane dielectric constant of the TMDs and h BN increases by around 15% as the number of layers is increased from monolayer to bulk, while the in plane component remains unchanged. Our computations also reveal that for octahedrally coordinated TMDs the ionic (static) contribution to the dielectric response is very high (4.5 times the electronic contribution) in the in plane direction. This indicates that semiconducting TMDs in the tetragonal phase will suffer from excessive polar optical scattering thereby deteriorating their electronic transport properties.Optical properties: in plane and out of plane dielectric constants of 2D semiconductorsThe out of plane dielectric constant of transition metal dichalcogenides and h BN is thickness dependent, unlike their in plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in plane and out of plane directions. In h BN, the in plane contribution was found to be larger than its out of plane counterpart, and independent on the number of h BN layers. Conversely, the out of plane h BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.
author_names: Akash A Laturia

Maarten L Van de Put

William G Vandenberghe
title: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
venue: npj 2D Materials and Applications
year: 2018