Query: applications, prospects and challenges of silicon carbide

Candidate papers:

abstract: Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si) A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.
author_names: Frederick Ojiemhende Ehiagwina

Olufemi Oluseye Kehinde

Lateef Olashile Afolabi

Hassan Jimoh Onawola

Nurudeen Ajibola Iromini
title: Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)
year: 2016

abstract: Throughout the world there have been alarming concerns over the use of non renewable resources during manufacturing of goods and associated environmental legislations. Therefore, the use of natural materials and fabrication of composites there from, particularly, development of natural fibre reinforced polymer composites is gaining significant attention. Although natural fibre reinforced composites (NFRCs) show strong application prospects, various materials and processing related challenges needs to be addressed to achieve long term stability and performance. The volume and number of applications of composite materials have grown steadily, penetrating and conquering new markets relentlessly. So everybody is concentrating on new materials which will be strong enough, less weight, recyclable with reduced cost. Hence all the researchers are concentrated on the composite materials which have all the above properties. The present work is concentrated on corn cob and Rice husk reinforced polymer hybrid composites. The composites specimen was fabricated with various weight percentages of corn cob fibres (25%,20% 15% Rice husk (20% and Silicon carbide(15% combined with lapox 12 resin using hand lay up method. So to obtain new composite materials different proportions of corn cob is added and the mechanical properties such as Tensile strength, Flexural Strength and Impact test were carried out for the samples cut from the fabricated composites specimen to the dimensions as per ASTM standard. With the increasing percentage of the reinforcements the performance of the material is improving. The tensile strength increases with the increase in corncob reinforcement percentage and flexural strength increases with the increasing in percentage of the rice husk and the impact strength of the material gets boost with equal proportional percentage of corncob and rice husk reinforcement.
author_names: C K Yogish

S Pradeep

R Raghavendra Rao

G Sunil Kumar
title: Effect of silicon carbide on the mechanical properties of the rice husk, corn cob polymer matrix composites
year: 2020

abstract: Abstract One dimensional silicon carbide (1D SiC) nanomaterials have shown unusual properties such as extreme high strength, good flexibility, fracture toughness and inverse Hall petch effect leading to the wide range of applications. However, the fabrication of desired 1D SiC nanomaterials with tailored atomic structures and their assembly into functional devices are still major challenges. In the present review, the recent research and trends towards the formation of SiC nanowires via different routes, their characterization and growth mechanism are discussed. Various aspects of synthesis methods for the bulk production of one dimensional SiC nanomaterials have been discussed with respect to quantity and quality. It is observed that SiC 1D nanostructures grown by different strategies exhibit unusual growth phenomena and properties. The promising myriad applications of 1D SiC nanostructures are highlighted, particularly with reference to surface dependent electronic transduction (gas and biological sensors, potentially useful in biology and medicine as well, for example, in bio labeling) energy conversion devices (nanomechanical and photovoltaic) microelectronic, nanowire photonics and nanocomposites devices. The important aspects of SiC nanomaterials including various fabrication strategies, knowledge of microstructural evolution, applications and toxicity issues are also covered in the present review. It summarizes and projects the future prospects of 1D SiC nanostructures.
author_names: Jyoti Prakash

Ramani Venugopalan

B M Tripathi

Sunil Kumar Ghosh

J K Chakravartty

Avesh K Tyagi
title: Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects
year: 2015

abstract: Recently, high temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 degC) Future challenges and prospects related to high temperature die attach materials also are proposed at the end of this article.
author_names: Hui Shun Chin

Kuan Yew Cheong

Ahmad Badri Ismail
title: A Review on Die Attach Materials for SiC Based High Temperature Power Devices
year: 2010

abstract: Abstract: Ceramic matrix composites are key materials for advanced energy systems. Silicon carbide (SiC) continuous fibre reinforced SiC matrix composites have promise for fission energy and fusion energy due to their high temperature strength, chemical inertness, irradiation tolerance and the favourable nuclear properties of SiC, and the damage tolerance and predictable strength of the composite structure. SiC based composites can be used to enhance the accident tolerance of light water reactors. These applications require materials with high reliability in harsh conditions, imposing challenges for materials. This chapter reviews the effect of irradiation on SiC and carbon fibre composites, gives an overview of the potential applications of these materials in fusion energy systems and nuclear reactors, and concludes with future prospects and opportunities for research.
author_names: Yutai Katoh
title: Ceramic matrix composites in fission and fusion energy applications
year: 2014

abstract: Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well known theoretical study on the limit of silicon in high voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs)
author_names: Florin Udrea

Gerald Deboy

T Fujihira
title: Superjunction Power Devices, History, Development, and Future Prospects
venue: IEEE Transactions on Electron Devices
year: 2017

abstract: The third generation of wide bandgap semiconductor as silicon carbide(SiC) breakthroughs the performance caps of silicon(Si) based power semiconductor devices in voltage, temperature, switching loss and switching speed, thus, the weight, size and cost of power electronic converters may be decreased, and the performance of power electronic system may be improved significantly. Power driver of electric vehicles with high power density is always the main development challenge of high power electric vehicles. The usage of wide bandgap semiconductors may has significant impacts on new generation electric vehicles, especially hybrid electric vehicles. In this paper, the development of SiC power devices is introduced first; then, research statues and application prospects of SiC devices in electric vehicle are presented; last, the main problems of EV driving system using SiC power devices are discussed.
author_names: Wang Xueme
title: Researches and Applications of Wide Bandgap SiC Power Devices in Electric Vehicles
year: 2014

abstract: The automotive industry is developing a range of electrically powered environmentally friendly vehicles such as hybrid vehicles (HVs) plug in hybrid vehicles, full electric vehicles, and fuel cell vehicles to help reduce tailpipe CO2 emissions and achieve energy diversification. HVs are regarded as one of the most practical types of environmentally friendly vehicle and have already been widely accepted in the market. Toyota Motor Corporation has positioned HV systems as a core technology that can be applied to all next generation electrically powered environmentally friendly vehicles and is currently working to enhance the performance of HV system components. Because of its low loss and high temperature operation properties, silicon carbide (SiC) is regarded as a highly promising material for power semiconductor devices to help reduce the size and weight of the power control unit, one of the key components of a HV system. Wide ranging activities are under way to meet the challenges of adopting SiC in an automotive environment, such as the development of crystal growth technologies, device structures, process technologies, defect analysis, and application to on board systems. This paper describes the current situation and future prospects for on board SiC power devices and the development of SiC based technologies.
author_names: Kimimori Hamada

Masaru Nagao

Masaki Ajioka

Fumiaki Kawai
title: SiC Emerging Power Device Technology for Next Generation Electrically Powered Environmentally Friendly Vehicles
venue: IEEE Transactions on Electron Devices
year: 2015

abstract: This paper reviews the state of current electronics and states the drive toward high temperature electronics. The problems specific to high temperature effects on conventional electronics and prospects of alternative technologies like silicon on insulator, silicon carbide, and diamond are discussed. Improving petroleum recovery from oil wells with hightemperature coverage of downhole electronics, making combustion processes more efficient utilizing embedded electronics, programs for More Electric Aircraft and Vehicles necessitating distributed control systems, and environmental protection issues stress the need to use and develop high temperature electronics. This makes high temperature electronics a key enabling technology in the 21st century. Actual applications using high temperature electronics are discussed in some details. Also information and guidelines are included about supporting electronics needed to make a complete high temperature system. The technology has been making major advancements and is expected to account for 20% of the electronics market by 2010. However, many technical challenges have to be solved.
author_names: Farid Touati

Faical Mnif

Aqeela Al Lawati
title: High Temperature Electronics: Status and Future Prospects in the 21st Century
year: 2006

abstract: 1. Introduction Types of carbon nanotubes (CNTs) Synthesis of carbon nanotubes Importance of CNT metal nanocomposites Importance of CNT ceramic nanocomposites Current challenges in developing CNT reinforced metal and ceramic matrix nanocomposites 2. Carbon nanotube metal nanocomposites Processing of CNT metal nanocomposites Dispersion of CNTs in metals Interfaces in CNT metal nanocomposites Aluminum, magnesium and titanium based composites Microstructural characterization 3. Physical Properties of CNT metal nanocomposites Electrical behavior Percolation concentration 4. Mechanical characteristics of CNT metal nanocomposites Tensile deformation behavior Strengthening and toughening mechanism Structure property relationship Comparison with nanoparticle reinforced metals 5. Carbon nanotube ceramic nanocomposites Preparation of CNT ceramic nanocomposites Oxide based nanocomposites Alumina, magnesia, silica, titania and zirconia matrices Carbide based nanocomposites: Silicon carbide, boron carbide Nitride based nanocomposites: Silicon nitride Microstructural characterization 6. Physical Properties of CNT ceramic nanocomposites Electrical behavior Percolation concentration Thermal behavior 7. Mechanical characteristics of CNT ceramic nanocomposites Strengthening and toughening Microdeformation mechanism Fracture toughness 8. Conclusions Future prospects Potential applications of CNT metal nanocomposites Potential applications of CNT ceramic nanocomposites
author_names: Sie Chin Tjong
title: Carbon Nanotube Reinforced Composites: Metal and Ceramic Matrices
year: 2009