Query: Overview of high voltage sic power semiconductor devices: development and application

Candidate papers:

abstract: Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits of HV SiC devices are presented. The technologies and challenges for HV SiC device application in converter design are discussed. The state of the art applications of HV SiC devices are also reviewed.
author_names: Shiqi Ji

Zheyu Zhang

Fred Wang
title: Overview of high voltage sic power semiconductor devices: development and application
year: 2017

abstract: In order to improve the efficiency, reliability and maintainability of the aircraft, the aerospace world has found in progressive electrification that reduces or removes the hydraulic, mechanical and pneumatic power systems. Power devices are widely applied in power system, while conventional Si power devices have reached the theoretical limitation. Admittedly, many advantages, such as high breakdown electric field strength, high saturated electron drift velocity and high thermal conductivity can be seen from SiC semiconductor material, and SiC power electronic devices made of which can have the ability to adapt to high voltage, high power, high frequency, high temperature and other harsh environment. This paper presents an overview of SiC power electronic devices used for the secondary power source in aerospace, through the comparison of power electronic devices between SiC and Si, the advantages of SiC devices and the development are analyzed, on the basis of which, emphatically discussed the application status of SiC devices in secondary power source, including aeronautical static inverter, transformer rectifier unit, DC DC converter, and motor drive. In the end, the existing problems in the application of SiC power electronic devices are discussed, as well as the impacts on aviation technology.
author_names: Qian Xun

Boyang Xun

Zuxin Li

Wang Peiliang

Zhiduan Cai
title: Application of SiC power electronic devices in secondary power source for aircraft
year: 2017

abstract: The current status of silicon carbide (SiC) device development in various voltage ranges is reviewed. Especially for next generation high to ultra high voltage devices, developments in SiC super junction Metal Oxide Semiconductor Field Effect Transistors (MOSFET, here denoted as SJ MOS) and SiC Insulated Gate Bipolar Transistors (IGBTs) are introduced. We expect that these next generation devices are going to trigger a paradigm shift in power electronics components, enabling very low conduction and switching losses.
author_names: Yoshiyuki Yonezawa
title: Recent Progress in High to Ultra High Voltage SiC Power Devices: Development and Application
venue: 2018 International Power Electronics Conference (IPEC Niigata 2018 ECCE Asia)
year: 2018

abstract: With the development of electric propulsion and payload technology, Silicon Carbide which is a typical semiconductor device with wide bandgap will play a greater role in spacecraft power system in the future. It has the advantages as high breakdown voltage, high electron drift velocity, high thermal conductivity, high voltage, high frequency and high anti radiation. This paper mainly introduces the new research progress of SiC based power diodes, JFETs and MOSFETs, as well as discusses the application prospects of SiC power semiconductor devices in spacecraft power systems.
author_names: Xing Jie

Kang Qing

Zhang Xuan

Li Feng
title: Application Prospect of SiC Power Semiconductor Devices in Spacecraft Power Systems
venue: 2017 13th IEEE International Conference on Electronic Measurement Instruments (ICEMI)
year: 2017

abstract: Extensive research in wide bandgap material technology such as silicon carbide (SiC) has led to the development of medium voltage (MV) power semiconductor devices with blocking voltages of 3.3 to 15 kV. When these devices are used in various applications, they are exposed to a high peak voltage stress and a very high $dv/dt$ (50 100 V/ns) These impose stringent requirements on the gate driving stage for these devices in terms of featuring a high isolation voltage capability along with a high $dv/dt$ ruggedness, which makes it necessary to have an ultralow coupling capacitance between primary and secondary sides of the gate drivers. One of the key issues in achieving this MV insulation pertains to the necessary clearance and creepage requirements, as defined in IEC 61800 5 1 standards. While the successful operation of these gate drivers is demonstrated in MV converter applications such as solid state transformers, and MV grid connected inverters, substantial research needs to be carried out to improve the gate drivers' performance and provide a plug and play solution. This article aims to comprehensively review these gate drivers and consolidate various required design features concerning their galvanic isolation stage, based on normal and short circuit operation of MV high power converter systems. Different device short circuit protection schemes for these gate drivers are explored in detail. Additional applications and functionalities of the gate drivers, including gate drivers used in the series connection of MV devices and intelligent gate drivers, are also provided in brief. Based on prior research, this review aims to provide design choices and guidelines for the gate drivers, accelerating the growth and deployment of MV SiC devices for field applications.
author_names: Anup Anurag

Sayan Acharya

Nithin Kolli

Subhashish Bhattacharya
title: Gate Drivers for Medium Voltage SiC Devices
venue: IEEE Journal of Emerging and Selected Topics in Industrial Electronics
year: 2021

abstract: Silicon based Power Semiconductor Devices are extensively used in power electronic applications for the last few decades. Recent developments in power electronics require devices with high power rating, switching frequency and operating temperature but silicon based devices do not facilitate these requirements. Wide band gap semiconductor devices like Silicon Carbide and Gallium Nitride are gaining popularity in overcoming the limitations of silicon based devices. The superior material properties of WBG semiconductor: band gap, electric field, thermal conductivity and electron mobility enables them to handle the requirements. This paper reviews the material properties of Silicon Carbide in comparison to Silicon. It also provides an overview of available SiC based power semiconductor devices and converter topologies.
author_names: Raksha Adappa

K Suryanarayana

H Swathi Hatwar

M Ravikiran Rao
title: Review of SiC based Power Semiconductor Devices and their Applications
venue: 2019 2nd International Conference on Intelligent Computing, Instrumentation and Control Technologies (ICICICT)
year: 2019

abstract: MV solid state transformers enabled by SiC semiconductor devices is a promising replacement to conventional low frequency transformers. However, when MV SiC devices are used in converter applications, they are exposed to a high peak stress (5 kV to 10 kV) and a very high dv dt (10 kV/uS to 100 kV/uS) Operating these semiconductor devices at these high peak stresses require careful designing from the packaging point of view, as well as designing the auxiliary systems such as the gate drivers and busbars, to handle the peak stress conditions. Recently, an extra high voltage (XHV) power module has been developed by Wolfspeed to package the 10 kV SiC MOSFETs for continuous and reliable operation. This paper aims at testing these modules in continuous operation for qualifying their operation in a MV solid state transformer. Reliable operation of these modules require the development of reliable auxiliary parts including gate drivers, bus bars and inductors. Design and development of the auxiliary system is also carried out. Successful tests demonstrating operation at MV levels are also shown. These tests serve as a qualification method for using these devices in a MV solid state transformer. It is envisaged that successful operation of these devices would accelerate the growth and deployment of MV SiC devices for field operation.
author_names: Anup Anurag

Sayan Acharya

Subhashish Bhattacharya
title: Evaluation of Extra High Voltage (XHV) Power Module for Gen3 10 kV SiC MOSFETs in a Mobile Utility Support Equipment based Solid State Transformer (MUSE SST)
venue: 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 ECCE Asia)
year: 2019

abstract: Power devices based on wide bandgap material such as silicon carbide (SiC) can operate at higher switching speeds, higher voltages, and higher temperatures compared to those based on silicon material. This article highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference, current overshoot, cross talk effect, and have a negative impact on loads such as motors. This article presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side effects. This article provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.
author_names: Xibo Yuan

Ian Laird

Sam Walder
title: Opportunities, Challenges, and Potential Solutions in the Application of Fast Switching SiC Power Devices and Converters
venue: IEEE Transactions on Power Electronics
year: 2021

abstract: Multiphase systems provides benefits compared to three phase systems, such as improved torque per ampere, high power density, better fault tolerance, lower current per phase (due to power splitting among a higher number of phases) and lower torque ripple, among others. Depending on the application, the system must meet determined requirements, such as the presence of harmonic content, power losses, and common mode voltage (CMV) generation. This paper presents a comparative analysis of space vector modulation (SVM) techniques applied to a five phase voltage source inverter with SiC switches to provide an overview of their performance. The performance of five phase 2L SVPWM (space vector pulse width modulation) 2L+2M SVPWM, 4L SVPWM techniques, and their discontinuous versions, are analyzed by focusing on harmonic content, power losses, and CMV generation using SiC semiconductor devices. Matlab/Simulink and PLECS simulations are performed to achieve the above mentioned goal. The use of different techniques allows (1) reducing the harmonic distortion when 2L+2M SVPWM and 4L SVPWM are applied, and (2) the switching sequence of the modulation techniques can influence the switching losses. Therefore, the use of SiC switches reduces the switching losses. (3) However, CMV dv/dt increases. Therefore, it is possible to minimize the effects of the CMV dv/dt and amplitude by choosing the adequate technique.
author_names: Fernando Acosta-Cambranis

Jordi Zaragoza

Luis Romeral

N Berbel
title: Comparative Analysis of SVM Techniques for a Five Phase VSI Based on SiC Devices
year: 2020

abstract: This paper deals with I V characteristics of SiC SBD and rectifying capabilities of four SiC SBD using a new package under the temperature up to 300degC. As regards of the I V characteristics, as the temperature increases, the threshold voltage decreases and the reverse current increases dramatically. This increase of the reverse current of the diodes under study leads to the limitation of the rectifying characteristics of the proposed packaging. This study demonstrates the ability of the later to be used in a harsh environment ones the components problems will have been solved.
author_names: Keisuke Koyanagi

Akinari Yamane

Masahiro Kozako

Ichiro Omura

Masayuki Hikita

Zarel Valdez-Nava

Sorin Dinculescu

Thierry Lebey
title: Development of a new package for next generation power semiconductor devices: Toward high temperature and high voltage applications
venue: 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS)
year: 2013