Query: Diluted ferromagnetic semiconductor ,Mn)P with decoupled charge and spin doping

Candidate papers:

abstract: We report the discovery of a diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off stoichiometry and the isovalent substitution of Mn2+ for Zn2+ respectively. Isostructural to (Ga,Mn)As, Li(Zn, Mn) P was found to be a p type ferromagnetic semiconductor with excess lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism with Curie temperature up to 34 K is achieved while the system still shows semiconducting transport behavior.
author_names: Zheng Deng

Kan Zhao

J L Zhu

Xiancheng Wang

Xiaodong Li

Q Q Liu

R C Yu

Tatsuo Goko

Benjamin A Frandsen

L Liu

Jinsong Zhang

Yayu Wang

Fanlong Ning

Sadamichi Maekawa

Yasutomo J Uemura
title: Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping
year: 2013

abstract: We report a new diluted ferromagnetic semiconductor Li1+y(Cd,Mn)P, wherein carrier is doped via excess Li while spin is doped by isovalence substitution of Mn2+ into Cd2+ The extended Cd 4d orbitals lead to more itinerant characters of Li1+y(Cd,Mn)P than that of analogous Li1+y(Zn,Mn)P. A higher Curie temperature of 45 K than that for Li1+y(Zn,Mn)P is obtained in Li1+y(Cd,Mn)P polycrystalline samples by Arrott plot technique. The p type carriers are determined by Hall effect measurements. The first principle calculations and X ray diffraction measurements indicate that occupation of excess Li is at Cd sites rather than the interstitial site. Consequently holes are doped by excess Li substitution. More interestingly Li1+y(Cd,Mn)P shows a very low coercive field <100 Oe) and giant negative magnetoresistance ~80% in ferromagnetic state that will benefit potential spintronics applications.
author_names: W Han

B J Chen

Bo Gu

G Q Zhao

S H Yu

Xue Cai Wang

Q Q Liu

Zheng Deng

Wei Min Li

J F Zhao

Lipeng Cao

Yan Peng

X Shen

X Zhu

R C Yu

Sadamichi Maekawa

Yasutomo J Uemura

Changqing Jin
title: Li(Cd,Mn)P: a new cadmium based diluted ferromagnetic semiconductor with independent spin charge doping
venue: Scientific Reports
year: 2019

abstract: Here, we report the successful synthesis of a spin and charge decoupled diluted magnetic semiconductor (DMS) (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np 1020 cm 3. The new DMS is a soft magnetic material with HC 400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.
author_names: Kun Zhao

Bijuan Chen

Zheng Deng

W Han

Guijuan Zhao

J L Zhu

Q Q Liu

Xiongjun Wang

Benjamin A Frandsen

Lan-xiao Liu

Sky Cheung

Fanlong Ning

Timothy J S Munsie

Teresa Medina

Graeme M Luke

Jeremy P Carlo

J Munevar

G M Zhang

Yasutomo J Uemura

Changqing Jin
title: (Ca,Na)(Zn,Mn)2As2: A new spin and charge doping decoupled diluted ferromagnetic semiconductor
year: 2014

abstract: Here we report the successful synthesis of a spin &charge decoupled diluted magnetic semiconductor (Ca,Na)(Zn,Mn)2As2, crystallizing into the hexagonal CaAl2Si2 structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of np~10^20 cm^ 3. The new DMS is a soft magnetic material with HC<400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.
author_names: Kan Zhao

B J Chen

Zheng Deng

W Han

J L Zhu

Q Q Liu

Xiao Chen Wang

Benjamin A Frandsen

L Liu

Sky Cheung

Fanlong Ning

Timothy J S Munsie

Teresa Medina

Graeme M Luke

Jeremy P Carlo

J Munevar

G M Zhang

Yasutomo J Uemura

Changqing Jin
title: (Ca,Na)(Zn,Mn)2As2: a new spin&charge doping decoupled diluted ferromagnetic semiconductor with hexagonal CaAl2Si2 structure
year: 2014

abstract: We report the successful synthesis and characterization of a new type I II V bulk form diluted magnetic semiconductor (DMS) Li(Zn,Mn,Cu)As, in which charge and spin doping are decoupled via (Cu,Zn) and (Mn,Zn) substitution at the same Zn sites. Ferromagnetic transition temperature up to ~33 K has been observed with a coercive field ~40 Oe for the 12.5% doping level. mSR measurements confirmed that the magnetic volume fraction reaches nearly 100% at 2 K, and the mechanism responsible for the ferromagnetic interaction in this system is the same as other bulk form DMSs.
author_names: S L Guo

Y Zhao

Huiyuan Man

Cui Ding

Xin Gong

Guoxiang Zhi

Licheng Fu

Y Gu

Benjamin A Frandsen

L Liu

Sky Cheung

Timothy J S Munsie

M N Wilson

Y P Cai

Graeme M Luke

Yasutomo J Uemura

Fanlong Ning
title: mSR investigation of a new diluted magnetic semiconductor Li(Zn,Mn,Cu)As with Mn and Cu codoping at the same Zn sites.
venue: Journal of physics. Condensed matter an Institute of Physics journal
year: 2016

abstract: We report the discovery of a new fluoride arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs type structure which is identical to that of the "1111" iron based superconductors. The joint hole doping via (Ba,K) substitution spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.
author_names: Bijuan Chen

Zheng Deng

Wenmin Li

Moran Gao

Qing-qing Liu

Changzhi Gu

Fengxia Hu

Baogen Shen

Benjamin A Frandsen

Sky Cheung

Liu Lian

Yasutomo J Uemura

Cui Ding

Shengli Guo

Fanlong Ning

Timothy J S Munsie

Murray N Wilson

Yipeng Cai

Graeme Luke

Zurab Guguchia

Shingo Yonezawa

Zhi Li

Changqing Jin
title: New Fluoride arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping
venue: Scientific reports
year: 2016

abstract: The electronic structure and the magnetic properties of a new diluted magnetic semiconductor have been investigated, using first principles calculations within the Perdew Burke Ernzerhof generalized gradient approximation. Compound is a type structure semiconductor with a direct bandgap of 0.57 eV at the point. With spins doped via isovalent (Zn, Mn) substitutions, the system prefers the antiferromagnetic ground state, resulting from the Mn Mn superexchange interactions. Via off stoichiometry (Sr, Na) substitutions, holes are introduced into the system, resulting in the ferromagnetic spin responses for Mn Mn pairs, except for the nearest neighboring Mn Mn pair. Based on our calculations, the ferromagnetism in the II II V based diluted magnetic semiconductor originates from Zener's p d exchange interactions between localized Mn spins and itinerant holes mediated by As atoms.
author_names: Jun-tao Yang

S J Luo

Yong-Chen Xiong
title: Magnetic mechanism investigations on the ferromagnetism of (Sr,Na)(Zn,Mn)2As2 with decoupled charge and spin doping
year: 2016

abstract: The electronic structure and magnetism of a series of 111 type diluted magnetic semiconductors Li(Zn,TM)P (TM V, Cr, Mn, Fe, Co, and Ni) are investigated on the basis of density functional theory. Our results indicate that V Cr Mn and Fe doped LiZnP are magnetic while Co and Ni doped LiZnP systems show no magnetisms. But all TM doped LiZnP systems prefer antiferromagnetic behavior by magnetic coupling calculations. In contrast, V/Li and Cr/Li codoped LiZnP prefer ferromagnetic ordering, and Mn/Li Fe/Li and Co/Li codoped LiZnP display antiferromagnetic spin ordering. Hence, Li dopant is very vital for the ferromagnetic formation of Li(Zn,TM)P materials. It is revealed that the magnetic moments come mainly from the TM 3d orbitals. The ferromagnetic coupling between the TM atoms is explained by through bond spin polarization. Our work demonstrates that the magnetic properties of Li(Zn,TM)P can be mediated by doping different TM atoms. These results may provide theoretical guidance for further experimental research on DMS.
author_names: Hualong Tao

Mengxia Wang

Zhihua Zhang

M He

Bo Song
title: Effects of Transition Metal (TM V, Cr, Mn, Fe, Co, and Ni) Elements on Magnetic Mechanism of LiZnP with Decoupled Charge and Spin Doping
year: 2017

abstract: We use muon spin relaxation (mu SR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li 1.15(Zn0.9Mn0.1)P with T C similar to 22 K. mu SR results confirm the gradual development of ferromagnetic ordering below T C with a nearly 100% magnetic ordered volume. Despite its low carrier density, the relation between static internal field and Curie temperature observed for Li(Zn,Mn) P is consistent with the trend found in (Ga,Mn)As and other bulk DFSs, indicating these systems share a common mechanism for the ferromagnetic exchange interaction. Li1+y(Zn1 xMnx)P has the advantage of decoupled carrier and spin doping, where Mn2+ substitution for Zn2+ introduces spins and Li+ off stoichiometry provides carriers. This advantage enables us to investigate the influence of overdoped Li on the ferromagnetic ordered state. Overdoping Li suppresses both T C and saturation moments for a certain amount of spins, which indicates that more carriers are detrimental to the ferromagnetic exchange interaction, and that a delicate balance between charge and spin densities is required to achieve highest T C.
author_names: Fanlong Ning

Huiyuan Man

Xin Gong

Guoxiang Zhi

Shengli Guo

Cui Ding

Quan Wang

Tatsuo Goko

L Liu

Benjamin A Frandsen

Yasutomo J Uemura

Hubertus Luetkens

Elvezio Morenzoni

Changqing Jin

Timothy J S Munsie

Graeme M Luke

Hangdong Wang

Bin Chen
title: Suppression of T C by overdoped Li in the diluted ferromagnetic semiconductor Li1+y(Zn1 xMnx)P: A mu SR investigation
year: 2014

abstract: Diluted magnetic semiconductor (DMS) exhibits unique magnetic and transport properties. The well known DMS is (Ga,Mn)As that is in thin film form so far only. However Mn dopant brings both localized spins and carriers in Ga1 xMnxAs, result in the lack of independent control of local moment and carrier densities. It is therefore difficult to study or control charge and spin variable quantitatively. Here we report that an individual control of carrier and spin can be realized in a new type of DMS for Mn doped I II V type semiconductor Li1+yZn1 xMnxAs in bulk. The Li(Zn,Mn)As polycrystalline samples showed ferromagnetic transition temperature (TC) up to 50K and spontaneous magnetization up to 2.9 mB per Mn. The other advantage of new DMS over III V DMSs is the availability of bulk specimens so far for these type of DMS Moreover the new DMS shows a soft magnetic behavior with the coercive force 100Oe which would be promising for prospective application. Muon spin relaxtion (mSR) probed static magnetic order of full volume in the ferromagnetic region. Electrical transport properties showed Li1+y(Zn,Mn)As (y 0.05 0.1) compounds have p type carriers since excess Li substitutes Zn sites presumably[1]
author_names: Zheng Deng

Qiu-Ning Liu

X Wang

J L Zhu

Shaomin Feng

Longxian Chen

Richeng Yu

Carlos J Arguello

Tatsuo Goko

Fanlong Ning

J S Zhang

Yong Yan Wang

Adam A Aczel

Timothy J S Munsie

Travis J Williams

Graeme M Luke

Teruhisa Kakeshita

Satoshi Uchida

Wataru Higemoto

Takayoshi Ito

Bo Gu

Sadamichi Maekawa

Gerald D Morris

Yasutomo J Uemura

Chiming Jin
title: A New Type Diluted Magnetic Semiconductor Li(Zn,Mn)As
year: 2012