Query: Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Candidate papers:

abstract: We observed a 32 fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron hole pair recombination in the QW to electron vibrations of SPs at the metal coated surface of the semiconductor heterostructure. This QW SP coupling is expected to lead to a new class of super bright and high speed light emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.
author_names: Koichi Okamoto

Isamu Niki

Axel Scherer

Yukio Narukawa

Takashi Mukai

Yoichi Kawakami
title: Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time resolved photoluminescence spectroscopy
year: 2005

abstract: Since 1993, InGaN light emitting diodes (LEDs) have been improved and commercialized1,2, but these devices have not fulfilled their original promise as solid state replacements for light bulbs as their light emission efficiencies have been limited2. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs) SPs can increase the density of states and the spontaneous emission rate in the semiconductor3,4,5,6,7,8,9, and lead to the enhancement of light emission by SP QW coupling10,11. Large enhancements of the internal quantum efficiencies (eint) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light emitting layer, whereas no such enhancements were obtained from gold coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid state light sources.
author_names: Koichi Okamoto

Isamu Niki

Alexander Shvartser

Yukio Narukawa

Takashi Mukai

Axel Scherer
title: Surface plasmon enhanced light emitters based on InGaN quantum wells
venue: Nature materials
year: 2004

abstract: Optical properties of InGaN/GaN multi quantum well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440 460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.
author_names: Lee Woon Jang

Dae-Woo Jeon

Trilochan Sahoo

Dong-Seob Jo

Jin-Woo Ju

Seungjai Lee

Jong Hyeob Baek

Jin-Kyu Yang

Jung-Hoon Song

A Y Polyakov

Inhwan Dennis Lee
title: Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles.
venue: Optics express
year: 2012

abstract: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This shift could be due to the electric field created by the MNPs through electrostatic image charge. We have studied the ultrafast carrier dynamics of carriers in hybrid InGaN/GaN QWs. The change in quantum confinement stark effect due to MNPs plays an important role for slow and fast carrier dynamics. We have also observed the image charge effect on the ultrafast differential transmission measurement due to the MNPs. We have studied the non linear absorption spectroscopy of these materials. The QWs behave as a discharging of a nanocapacitor for the screening of the piezoelectric field due to the photo excited carriers. We have separated out screening and excitonic bleaching components from the main differential absorption spectra of InGaN/GaN QWs.
author_names: Meg Mahat
title: Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells
year: 2012

abstract: The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon rich silicon nitride (SiNx) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average position of the excitons is located at approximately 40 nm beneath the top surface of the SiNx films. The approaches for further improving the optoelectrical properties of the luminescence matrix are anticipated based on the model we adopted. The optimization of the thickness of the luminescence matrix as well as the size and shape of metal nanostructures may be the alternative approaches. Besides, the application of multilayers with the luminescence matrix inserted between barrier layers (we defined it as confined structures here) may be also an available choice. Our work may provide a deep comprehension on the coupling between LSPs and excitons, which is not limited to a certain luminescence material but with unconfined structures.
author_names: Feng Wang

Dongsheng Li

Deren Yang

Duan-lin Que
title: The coupling between localized surface plasmons and excitons via Purcell effect
venue: Nanoscale Research Letters
year: 2012

abstract: Surface plasmonics from metal nanoparticles have been demonstrated as an effective way of improving the performance of low efficiency light emitters. However, reducing the inherent losses of the metal nanoparticles remains a challenge. Here we study the enhancement properties by Ag nanoparticles for InGaN/GaN quantum well structures. By using a thin SiN dielectric layer between Ag and GaN we manage to modify and improve surface plasmon coupling effects, and we attribute this to the improved scattering of the nanoparticles at the quantum well emission wavelength. The results are interpreted using numerical simulations, where absorption and scattering cross sections are studied for different sized particles on GaN and GaN/SiN substrates.
author_names: Ahmed Fadil

Daisuke Iida

Yuntian Chen

Jun Ma

Yiyu Ou

Paul Michael Petersen

Haiyan Ou
title: Surface plasmon coupling dynamics in InGaN/GaN quantum well structures and radiative efficiency improvement
venue: Scientific reports
year: 2014

abstract: We obtained very bright light emission from CdSe quantum dots (QDs) by using surface plasmon coupling. Both the photoluminescence intensities and decay rates are dramatically increased when QDs are located on evaporated gold films.
author_names: Koichi Okamoto

S Vyawahare

Axel Scherer
title: Surface plasmon enhanced light emission from CdSe quantum dot nanocrystals
venue: 2006 Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference
year: 2006

abstract: Insulating spacer layers of MgO were used to identify the enhancement mechanisms of the ZnO band edge and visible luminescence in ZnO MgO Ag and ZnO MgO Au multilayers. Purcell enhancement of the ZnO band edge emission by both Ag and Au surface plasmon polaritons is confirmed by demonstrating that the exponential decay of this emission as a function of increasing MgO thickness is consistent with the Ag and Au SPP evanescent decay lengths. Local surface plasmons excited in Ag and Au nanoparticles and rough films are also shown to enhance the ZnO visible donor acceptor pair photoluminescence by dipole dipole scattering, again with an appropriate dependence on the thickness of the MgO spacer layer. We also confirm that both Ag and Au nanoparticles enhance the ZnO band edge emission by charge transfer when the MgO spacer layer is absent.
author_names: Benjamin J Lawrie

Richard F Haglund

Richard Mu
title: Enhancement of ZnO photoluminescence by localized and propagating surface plasmons.
venue: Optics express
year: 2009

abstract: The authors demonstrate the metallic structure dependent surface plasmon (SP) coupling behaviors with a blue emitting InGaN/GaN quantum well (QW) which is 10nm away from the metallic structures. The SP QW coupling behaviors in the areas of semiconductor surface coated with silver thin film and silver nanoparticles are compared. It is found that both the suppression of photoluminescence (PL) intensity and the reduction of time resolved PL (TRPL) decay time strongly depend on the metallic morphology. A phenomenological model of carrier relaxation in the SP QW coupling process is built to fit the TRPL decay profiles for calibrating the reasonable decay time constants of carrier and SP.
author_names: Cheng-Yen Chen

Dong-Ming Yeh

Yen-Cheng Lu

Chih-Chung Yang
title: Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure
year: 2006

abstract: By measuring external quantum efficiency and differential carrier lifetimes of blue and green GaN based light emitting diodes depending on injection current, efficiency droop effect is proposed to be related to both carrier leakage and Auger recombination.
author_names: Xiao Meng

Lai Wang

Jiadong Yu

Zhi-biao Hao

Yi Luo
title: A Differential Carrier Lifetime Analysis on GaN Based LED's Quantum Efficiency
venue: 2014 Asia Communications and Photonics Conference (ACP)
year: 2014