Query: sic mosfet high voltage

Candidate papers:

abstract: The performance of the gate drive power supply (GDPS) greatly impacts the safety and reliability of the gate drive for power semiconductor power devices. This paper focuses on the design of isolated gate driver power supply for 10 kV silicon carbide (SiC) MOSFET for medium voltage (MV) applications. Different insulation schemes are compared for the high voltage insulated transformer in GDPS. Impact factors for transformer interwinding capacitance are analyzed, with which, a low inter winding capacitance design approach is proposed for the high voltage insulated transformer. Furthermore, an upward voltage reference based voltage regulation scheme is proposed for achieving good load regulation without output voltage feedback. Finally, a 20 kV insulated GDPS is built and tested, and experimental results are presented to verify the effectiveness of the design approach.
author_names: Li Sha Zhang

Shiqi Ji

Shida Gu

Xingxuan Huang

James Palmer

William Giewont

Fred Wang

Leon M Tolbert
title: Design Considerations of High Voltage Insulated Gate Drive Power Supply for 10 kV SiC MOSFET in Medium Voltage Application
venue: 2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
year: 2019

abstract: SiC MOSFETs have demonstrated continued performance improvement and maturation in the areas of Gate oxide stability and reliability over the past years. While necessary, this alone is not sufficient to achieve reliable high voltage operation. In this paper, the design constraints impacting high voltage reliability and their impact on SiC MOSFET performance at useful operating conditions are discussed. Experimental results are demonstrated with industry benchmark, reliable operation of up to Tj=200degC with 1.2kV/25mOhm SiC MOSFETs and Tj=175degC, 1.7kV/450A all SiC MOSFET Dual Switch modules. Avalanche ruggedness of the high performance devices is also demonstrated with single pulse energy densities of 9 15J/cm2 recorded with Drain currents as high as ID= 90A for 0.2cm2 die.
author_names: Peter Almern Losee

Alexander Viktorovich Bolotnikov

L Yu

Greg Dunne

David Richard Esler

Jeffrey Erlbaum

Brian Lynn Rowden

Arun Virupaksha Gowda

Adam F Halverson

Reza Ghandi

Peter M Sandvik

Ljubisa Dragoljub Stevanovic

R Hristov
title: SiC MOSFET design considerations for reliable high voltage operation
venue: 2017 IEEE International Reliability Physics Symposium (IRPS)
year: 2017

abstract: The 10 kV to 15 kV SiC MOSFET and 15 kV SiC IGBT are state of the art high voltage (HV) devices designed by Cree Inc. These devices are expected to increase the power density of converters and are expected to replace 4.5 kV/6.5 kV Si IGBTs. However, these are not commercially available. On the other hand low voltage (LV) 1.7 kV SiC MOSFET is commercially available, and it is replacing existing 1.7 kV Si IGBT and it can meet immediate need of medium or high voltage (MV or HV) converter applications with series connection of these devices and can replace existing 4.5 kV/6.5 kV Silicon (Si) IGBT. Therefore, 10 kV 15 kV SiC modules and series connected 1.7 kV SiC MOSFET will be competing with each other for MV and HV converter applications. Hence, to explore the capability of low voltage SiC devices for MV or HV applications, a HV switch (10 kV 15 kV) using the series connection of 1.7 kV/300 A SiC MOSFET modules has been investigated. For making HV switch using series connected 1.7 kV SiC MOSFET, a simple RC snubber method has been used for dynamic voltage sharing to offset the turn off delays due to mismatch of device characteristics and gate signals. Experimental switching characterization with different values of RC snubbers has been carried out, and a methodology has been outlined to find the optimal RC snubber which gives minimum voltage sharing difference, snubber losses and total semiconductor losses. In addition, experimental switching characterization of 10 kV 15 kV SiC modules is presented. Furthermore, a performance comparison of HV 10 kV 15 kV SiC modules and HV switch using series connected 1.7 kV SiC MOSFETs is presented in this paper.
author_names: Kasunaidu Vechalapu

Subhashish Bhattacharya
title: Performance comparison of 10 kV#x2013;15 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices
venue: 2016 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2016

abstract: This paper addresses a study of output voltage of a switched capacitor step down converter for a high voltage application. The proposed design is 3:4 Series to parallel switched capacitor converter based on capacitors and switches only. The Slow Switching Limit Impedance was theoretically calculated and proven. The Slow Switching Limit Impedance has an inverse relation with switching frequency and the capacitor's size. A minimum value of the Slow Switching Limit Impedance is desired; however, that requires a high switching frequency. Increasing the switching frequency might produce losses from switching devices. To maintain the output voltage by keeping switching losses low, a wide bandgap silicon carbide SiC MOSFET was used in this work. The output voltage and its ripple were tested and compared when ideal switches or SiC MOSFET was used. The comparison between ideal switches and SiC MOSFET was applied under several values of the switching frequency. When the fsw increases, a SiC MOSFET successfully shows its ability to keep the switching losses suitable. The LTspice software have been used to simulate the proposed switched capacitor, and the results have been analyzed and discussed.
author_names: Ayoob Alateeq

Yasser Almalaq

Mohammad A Matin
title: Using SiC MOSFET in switched capacitor converter for high voltage applications
venue: 2016 North American Power Symposium (NAPS)
year: 2016

abstract: The paper aims at clarifying the carrier trapping influence on the electrical characteristics of silicon carbide (SiC) power MOSFETs and its inclusion in the simulation of SiC power mosfet based circuits. Special focus is given on the degradation of the switching characteristics due to carrier trapping at SiC/SiO2 interface defects. A compact SiC power mosfet model, considering the trap density in the framework of a complete surface potential description, has been developed by for accurate circuit simulation including power loss prediction. The carrier trapping is verified to cause a switching delay, which results in switching loss increase. To achieve low power loss, trap density reduction is shown to be vital. The maximum allowable trap density, which does not affect switching power loss, is discussed.
author_names: Yuta Tanimoto

Atsushi Saito

Kai Matsuura

Hideyuki Kikuchihara

Hans Jurgen Mattausch

Mitiko Miura-Mattausch

Noriaki Kawamoto
title: Power Loss Prediction of High Voltage SiC mosfet Circuits With Compact Model Including Carrier Trap Influences
venue: IEEE Transactions on Power Electronics
year: 2016

abstract: Newly developed 15 kV silicon carbide (SiC) power MOSFETs with fast switching capability enable the reduction of size, weight and complexity of medium voltage power converters. In medium voltage and high frequency applications, zero voltage switching (ZVS) is necessary since significant amount of energy is stored in MOSFETs' parasitic output capacitors. Recovering these energy is important for high conversion efficiency while ZVS also reduces the dV/dt significantly in these devices. To guarantee complete ZVS, it is crucial to accurately characterize the output charge of devices. In this paper, existing high voltage capacitance and output charge measurement techniques are reviewed. A dynamic half bridge test method for 15kV SiC MOSFETs' output charge measurement is thoroughly analyzed and experimentally verified up to 6 kV. Output capacitance model is then derived using the measured results. The test circuit not only reflects the realistic ZVS scenario, but also achieves high accuracy <1% error) without resorting to special equipment or complex configuration which are usually necessary in high voltage test. System level design consideration, error analysis and accuracy certification for this high voltage tester is also given in the paper.
author_names: Li Wang

Qianlai Zhu

Wensong Yu

Alex Q Huang
title: A study of dynamic high voltage output charge measurement for 15 kV SiC MOSFET
venue: 2016 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2016

abstract: Silicon Carbide (SiC) MOSFETs are being increasingly utilized in medium and high power electronics converters >1 kW) because of the significantly lower switching and conduction losses when compared with conventional power switches such as the Si IGBT. SiC MOSFET based converters operating at high frequency can achieve high efficiency and high power density at the same time. Minimum switching loss can be achieved in the SiC MOSFET with carefully designed gate driving condition and DC link layout, such as the integrated SiC MOSFET module discussed in this paper. Multi megahertz switching frequency could be realized by the proposed SiC MOSFET module with proper soft switching topology. This paper analyzes three isolated DC/DC converters, namely the asymmetrical half bridge converter, phase shift full bridge converter, and LLC resonant converter. The loss model of the SiC MOSFET is developed and utilized in the analysis. Comparisons are carried out from the device loss and soft switching requirement point of view. The LLC resonant converter is deemed more suitable for multi megahertz application. A 4.5 kW 1.2 MHz LLC resonant converter prototype is developed and it demonstrates a peak efficiency of 97% at 4 kW.
author_names: Suxuan Guo

Pengkun Liu

Ruiyang Yu

Liqi Zhang

Alex Q Huang
title: Analysis and loss comparison of megahertz high voltage isolated DC/DC converters utilizing integrated SiC MOSFET module
venue: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
year: 2016

abstract: Recent studies have pointed out the benefits of using Silicon Carbide (SiC) devices in photo voltaic power conversion. In Particular, SiC Power MOSFET technology has greatly advanced over the last years and has presently reached sufficient maturity to stimulate a concrete interest in the development of power conversion circuits based entirely on this technology, in view of the clear potential advantages it offers over alternative SiC device technologies (e.g. JFET, BJT) This paper presents a thorough characterization of an all SiC MOSFET based single phase bi directional switched neutral point clamped (BSNPC) three level inverter, in which, for the first time, SiC Power MOSFETs of different voltage ratings (1200 and 600V) are used. A parametric experimental characterization of the power cell performance is carried out, separating the effects of output power, heat sink temperature and switching frequency and load variations by means of bespoke heat sink design. The effect of relying exclusively on the MOSFET body diode for inductive load current freewheeling is critically assessed against usage of an external SiC Schottky diode. The experimental results are compared with a mixed approach design, where Silicon (Si) devices are used for the lower voltage switches and SiC MOSFETs are kept for the higher voltage ones, deriving a clear indication of the superior possibilities offered by SiC Power MOSFETs for improved efficiency, power density and reliability, key aspects of power electronics technology evolution.
author_names: Dipankar De

Alberto Castellazzi

Adane Kassa Solomon

Andrew Trentin

Masataka Minami

Takashi Hikihara
title: An all SiC MOSFET high performance PV converter cell
venue: 2013 15th European Conference on Power Electronics and Applications (EPE)
year: 2013

author_names: Vechalapu Kasunaidu

Bhattacharya Subhashish
title: Performance comparison of 10 kV#x2013;15 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices
year: 2016

abstract: The medium voltage (MV) high speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies 5 kHz) to generate higher fundamental frequency AC input voltages for the motor 500 Hz) and thereby achieving high speed at the motor output 15000 rpm) This paper presents the series connection of 1.7 kV SiC MOSFET devices to enable simple two level MV converter for high speed drive and grid connected applications. Experimental switching characterization of a phase leg (one pole of a three phase converter) with the series connection of four devices per arm (or eight per leg) has been presented. It also presents the experimental results of a DC AC half bridge inverter with four devices in series per arm at 3kV dc bus, at different fundamental frequencies. It also includes the experimental endurance test results of phase leg (pole) in a DC DC converter at 100 kW, 3kV dc bus. Furthermore, it also presents the performance evaluation of a 3 phase voltage source inverter (VSI) efficiency using four series connected devices for 3.6 kV dc bus, 2.1 kV AC(L L) 720 kW output power and its comparison with single 6.5 kV Si IGBT.
author_names: Kasunaidu Vechalapu

Samir Hazra

Utkarsh Raheja

Abhay Negi

Subhashish Bhattacharya
title: High speed medium voltage (MV) drive applications enabled by series connection of 1.7 kV SiC MOSFET devices
venue: 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
year: 2017