Query: MUÑOZ P silicon nitride

Candidate papers:

abstract: Photonic integration technologies have spread in the past decade by means of foundry models that mirror the electronic integrated circuit industry developments of the past century. Several monolithic technologies exist, based on silicon and III V semiconductors. In this paper, we discuss the current state and forthcoming developments of open access photonic foundries whose technology platforms are based on silicon nitride material. The paper presents various silicon nitride technologies and foundries, alongside with access models supported by generic integration and process design kits. Technical features, enabled by different micro fabrication processes and tools are summarized. Application examples and developments of forthcoming incorporation into these platforms are outlined.
author_names: Pascual Munoz

Paulus W L van Dijk

Douwe H Geuzebroek

Michael Geiselmann

Carlos Dominguez

Andim Stassen

Jose David Domenech

Michael Zervas

Arne Leinse

Chris G H Roeloffzen

Bernardo Gargallo

Rocio Banos

Juan Fernandez

Gloria Mico Cabanes

Luis A Bru

Daniel Pastor
title: Foundry Developments Toward Silicon Nitride Photonics From Visible to the Mid Infrared
venue: IEEE Journal of Selected Topics in Quantum Electronics
year: 2019

abstract: Silicon nitride has received a lot of attention during the last ten years, for applications such as bio photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid infrared wavelengths will be introduced.
author_names: Gloria Mico

Luis A Bru

Daniel Pastor

David Domenech

Juan Fernandez

Ana M Sanchez

Josep M Cirera

Carlos Dominguez

Pascual Munoz
title: Silicon nitride photonics: from visible to mid infrared wavelengths
venue: OPTO
year: 2018

abstract: In this paper, a review of the current state of the art of Silicon Nitride photonics integration platforms is presented. These platforms are nowadays employed primarily for bio photonics and telecom applications, ranging from the visible to the long near infrared. Prospects for the extension to mid infrared wavelengths and applications are also presented and discussed.
author_names: Pascual Munoz

Jose David Domenech

Carlos Dominguez

Ana M Sanchez

Gloria Mico

Luis A Bru

Daniel Perez

Daniel Pastor
title: State of the art of Silicon Nitride photonics integration platforms
venue: 2017 19th International Conference on Transparent Optical Networks (ICTON)
year: 2017

abstract: We describe the design and performance of waveguide mixers at 1.4 THz and 1.9 THz based on NbTiN phonon cooled hot electron bolometers (HEBs) fabricated on a 2 mum thick Si3N4 membrane. The membrane is bonded to a silicon frame in the mixer block using a flip chip process. Simulated RF coupling is compared with experimental results, showing good agreement. Receiver noise temperature measurements show uncorrected values of 1600 K at 1.4 THz and 2100 K at 1.9 THz, both at 1.5GHz intermediate frequency. Device cooling on the membrane seems not to be problematic. The mixers are used in receivers for the Stratospheric Observatory for Infrared Astronomy (SOFIA) [German REceiver At THz frequencies (GREAT) and the Atacama path finder experiment (APEX) [CO, N+ deuterium observations receiver (CONDOR)
author_names: P Munoz

Sven Holger Bedorf

Michael Brandt

Thomas Tils

Netty Honingh

Karl Jacobs
title: THz Waveguide Mixers With NbTiN HEBs on Silicon Nitride Membranes
venue: IEEE Microwave and Wireless Components Letters
year: 2006

abstract: Superconducting phonon cooled hot electron bolometer (HEB) mixers are promising heterodyne detectors for THz frequencies. KOSMA is working to develop a heterodyne receiver for the GREAT receiver on SOFIA for observation at 1.7 1.9 THz using waveguide mixers. Waveguide mixers at these frequencies require very thin device substrates. We report on recent progress in fabricating and characterizing mixers on 2mm thick silicon nitride membranes which are suspended in a substrate channel. Heterodyne measurements with receiver noise temperatures of 1000K at 800GHz RF and 1GHz IF, at a 4.2K bath temperature show that fabrication of phonon cooled HEBs on membranes is possible with a good noise performance. The HEB device was fabricated at KOSMA and consists of a 3 5nm thin NbTiN film on an AlN buffer layer.
author_names: P Munoz

Sven Holger Bedorf

Michael Brandt

Thomas Tils

Netty Honingh

Karl Jacobs
title: Fabrication and characterization of phonon cooled hot electron bolometers on freestanding 2 mm silicon nitride membranes for THz applications
venue: SPIE Astronomical Telescopes Instrumentation
year: 2004

abstract: Because of the demand for advanced measurement systems in the field of modern photonic integrated circuits, optical frequency domain reflectometry (OFDR) is a robust technique for characterizing design to fabrication deviations. In this paper we report an OFDR device where the interferometric part is monolithically integrated along with the device under test. We discuss the advantages in terms of compactness and performance, and the importance of the incorporated dispersion de embedding mechanism. Experimental validation is carried out by interrogating an arrayed waveguide grating on a silicon nitride platform. The results establish the proposed device as a first step in the quest for a universal test structure for integrated devices.
author_names: Luis A Bru

Daniel Pastor

Pascual Munoz
title: Integrated optical frequency domain reflectometry device for characterization of complex integrated devices.
venue: Optics express
year: 2018

abstract: Abstract Automated, controlled fluid delivery is an important operation in micro total analysis systems (mTAS) Actuated micro valves have been proposed to separate a pressurized fluid from the channel to be filled. This scheme greatly reduced the energy required to move the fluid. The design, micro fabrication and performance of arrays of single use valve, which constitute an integral part of this actuation mechanism, is presented. The addressable constituent of the valve is a thin metallic ohmic resistor, whose design dictates the actuation voltage. The resistor is patterned on a silicon nitride membrane that constitutes the flow barrier, which stands on a silicon wafer. Rapid heating via an electric pulse induces thermal stresses in the membrane/resistor, which in turn breaks the membrane opening the valves. The chosen processing steps allow for wafer level device fabrication using standard MEMS processing tools. Different size membranes with various thicknesses (1, 2 and 3 mm) are tested. Valves that withstand a pressure differential of up to 5 bar (3 mm x 3 mm, 3 mm thick silicon nitride membranes) were chosen for the study. Investigated valves were activated with a potentials ranging between 14 and 140 V and required activation energies from tens to hundreds of milliJoules.
author_names: Andres M Cardenas-Valencia

Jay Dlutowski

John Bumgarner

Christel M Munoz

Weidong Wang

Raghuram Popuri

Larry Langebrake
title: Development of various designs of low power, MEMS valves for fluidic applications
year: 2007

abstract: Despite their steady improvement over the last decades, the present UV detectors exhibit some limitations inherent to their silicon technology. Yet, the utmost spatial resolution, temporal cadence, sensitivity and photometric accuracy will be decisive for the forthcoming space solar missions. The advent of novel diamond or nitride imagers would surmount many current weaknesses, thus opening up new prospects and making the instruments cheaper. As for projects like the Solar Probe of NASA, or the Solar Orbiter of ESA, the aspiration for diamond UV detectors is still more sensible since these spacecrafts will approach very near to the Sun where the heat and the radiation fluxes are tremendously high. This triggered the initiative of an original R and T programme entitled BOLD described in this paper. We depict motivations and intentions and report on dedicated experiments with several devices under EUV synchrotron light, NUV laser and micro Raman spectroscopy.
author_names: Jean-Francois Hochedez

Philippe Bergonzo

M C Castex

Pierre Dhez

Olivier R Hainaut

M Sacchi

Jose L Alvarez

Howard Boyer

Alain Deneuville

Pierre J L Gibart

Benoit Guizard

J-P Kleider

Philippe C Lemaire

Christine Mer

Eva Monroy

E Munoz

Pierre Muret

Franck Omnes

Jose Luis Pau

Victor G Ralchenko

Dominique Tromson

Erwin Verwichte

Jean Claude Vial
title: Diamond UV detectors for future solar physics missions
year: 2001

abstract: The current development status of NiobiumTitanium Nitride (NbTiN) HEB mixers, for example for the GREAT receiver on SOFIA, is presented for both waveguide and quasi optical mixers for 0.8, 1.9 and 2.7 THz LO frequency. For the waveguide mixers at 0.8 and 1.9 THz the HEBs are made on 2mm thick silicon nitride membranes which are suspended in a substrate channel perpendicular to the waveguide. For the quasi optical mixer at 2.7 THz the devices are fabricated on Si substrates and are integrated into spiraland doubleslot antennas and used with an extended hemispherical silicon lens. Our measurements show that the waveguide/membrane mixers work well at both 800 GHz and 1.9 THz. To increase the required IF bandwidth we are developing thin NbN films. The first results of the NbN thin film development are presented in the paper.
author_names: Sven Holger Bedorf

P Munoz

Thomas Tils

Cornelia E Honingh

Karl Jacobs
title: Development of Phonon Cooled NbTiN HEB Heterodyne Mixers for GREAT
year: 2005

abstract: We report and characterize low temperature, plasma deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300degC, it is back end compatible with complementary metal oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6x106 at 1552 nm and >1.2x106 throughout l=1510 1600 nm, without annealing or stress management (film thickness of 920 nm) We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900 nm bandwidth modulation instability microresonator Kerr comb and octave spanning, supercontinuum broadened spectra.
author_names: Jeff Chiles

Nima Nader

Daniel D Hickstein

Su-Peng Yu

Travis C Briles

David R Carlson

Hojoong Jung

Jeffrey M Shainline

Scott A Diddams

Scott B Papp

Sae Woo Nam

Richard P Mirin
title: Deuterated silicon nitride photonic devices for broadband optical frequency comb generation.
venue: Optics letters
year: 2018