Query: High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

Candidate papers:

abstract: Direct printing of functional electronic materials may provide a new route to low cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via hole interconnections based on solution processed polymer conductors, insulators, and self organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water based conducting polymer inkjet droplets enables high resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on off current switching ratios of 10(5) were achieved.
author_names: Henning Sirringhaus

Takeo Kawase

Richard H Friend

Tatsuya Shimoda

Muthiah N Inbasekaran

W Wu

Edmund P Woo
title: High resolution inkjet printing of all polymer transistor circuits.
venue: Science
year: 2000

abstract: www.sciencemag.org (this information is current as of April 13, 2009 The following resources related to this article are available online at http:/www.sciencemag.org/cgi/content/full/290/5499/2123 version of this article at: including high resolution figures, can be found in the online Updated information and services, http:/www.sciencemag.org/cgi/content/full/290/5499/2123#otherarticles 4 of which can be accessed for free: cites 19 articles This article 689 article(s) on the ISI Web of Science. cited by This article has been http:/www.sciencemag.org/cgi/content/full/290/5499/2123#otherarticles 13 articles hosted by HighWire Press; see: cited by This article has been http:/www.sciencemag.org/cgi/collection/mat_sci Materials Science subject collections This article appears in the following http:/www.sciencemag.org/about/permissions.dtl in whole or in part can be found at: this article permission to reproduce of this article or about obtaining reprints Information about obtaining
author_names: Jorg Schotter

G A Kastle

N C Emley

Takasada Shibauchi

Lia Krusin-Elbaum

Kathryn W Guarini

C T Black

Mark T Tuominen
title: High Resolution Inkjet Printing of All Polymer Transistor Circuits
year: 2009

abstract: All polymer TFTs are developed using an inkjet printing process. Conductive polymer is deposited onto a substrate having a wettability contrast to realize a channel length of 10/spl mu/m and 500/spl mu/m width. Polymer integrated circuits and active matrix backplanes are also developed and their operation demonstrated.
author_names: Tatsuya Shimoda

Takeo Kawase
title: All polymer thin film transistor fabricated by high resolution ink jet printing
venue: 2004 IEEE International Solid State Circuits Conference (IEEE Cat. No.04CH37519)
year: 2004

abstract: Impressive advances in vapor phase deposition and photolithographic patterning techniques have been fueling the silicon microelectronics revolution over the last 40 years. However, for many interesting classes of materials, including biological materials or functional synthetic polymers, vacuum deposition and photolithography are not the techniques of choice for producing ordered structures and devices. Many of these materials selfassemble into well ordered microstructures when deposited from solution, and patterning may be more readily achieved by solution based selective deposition and direct printing techniques. It is appealing to consider novel ways of manufacturing functional circuits and devices based on techniques that are similar to printing visual information onto paper.
author_names: Henning Sirringhaus

Takeo Kawase

Richard H Friend
title: High Resolution Ink Jet Printing of All Polymer Transistor Circuits
year: 2001

abstract: Inkjet printing on pre fabricated high resolution substrate is developed to improve the operational speed of printed organic transistors. The high resolution features are designed to define transistor critical dimensions, while maintaining the flexibility to incorporate different circuit constructions. Logic gate and ring oscillator circuits fabricated by inkjet printing on the high resolution substrate are demonstrated, to show that the same high resolution pattern can be adapted for constructing different electronic circuits.
author_names: Ping Mei

Tse Nga Ng

Rene A Lujan

David E Schwartz

Sivkheng Kor

Brent Krusor

Janos Veres
title: Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits
year: 2014

abstract: As demands for high pixel densities and wearable forms of displays increase, high resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 mm) and superb performance, including high mobility ~230 cm2 V 1 s 1) Logic operations of the amplifier circuits composed of these e jet printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e jet printing assisted high resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate bias stabilities significantly. Moreover, low process temperatures <250 degC) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next generation printed electronics.
author_names: S Y Kim

K Kim

Young Hwan Hwang

J Park

J Jang

Yonghyun Nam

Y Kang

M Kim

H Park

Zonghoon Lee

J Choi

Yumee Kim

S Jeong

Byeong-Soo Bae

J-U Park
title: High resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance.
venue: Nanoscale
year: 2016

abstract: Abstract It is a big challenge to construct large scale, high resolution and high performance inkjet printed metal oxide thin film transistor (TFT) arrays with independent gates for the new printed displays. Here, a self confined inkjet printing technology has been developed to construct large area (64 x 64 array) high resolution and high performance metal oxide bilayer (In2O3/IGZO) heterojunction TFTs with independent bottom gates on transparent glass substrates. Inkjet printing In2O3 dot arrays with the diameters from 55 to 70 mm and the thickness of ~10 nm were firstly deposited on UV/ozone treated AlOx dielectric layers, and then IGZO dots were selectively printed on the top of In2O3 dots by self confined technology to form In2O3/IGZO heterojunction channels. When the inkjet printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films, the mobility of the resulting printed In2O3/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm2 V 1 s 1 with excellent on/off ratios >108) and negligible hysteresis. Furthermore, the printed N Metal Oxide Semiconductor (NMOS) inverter consisted of an In2O3/IGZO TFT and an IGZO TFT has been demonstrated, which show excellent performance with the voltage gain up to 112. The strategy demonstrated here can be considered as general approaches to realize a new generation of high performance printed logic gates, circuits and display driving circuits.
author_names: Shuangshuang Shao

Kun Liang

Xinxin Li

Jinfeng Zhang

Chuan Liu

Zheng Cui

Jianwen Zhao
title: Large area (64 x 64 array) inkjet printed high performance metal oxide bilayer heterojunction thin film transistors and n metal oxide semiconductor (NMOS) inverters
year: 2021

abstract: Conjugated polymer semiconductors deposited from solution are best known for their electroluminescent properties and use in light emitting diode devices. However, they have recently also become of interest for applications in thin film transistors. By making use of self organisation mechanisms such as phase separation or liquid crystallinity ordered thin films can be deposited from solution in which high charge carrier mobilties on the order l0 2 10 1 cmtlvs can be achieved. In conffast to inorganic semiconductor transistors which are fabricated by complex vacuum deposition and photolithography, polymer semiconductors may enable low cost fabrication of functional transistor circuits by a combination of solution processing and direct printing.
author_names: Henning Sirringhaus

Takeo Kawasel

Tatsuya Shimodal

Richard H Friend
title: F 6 1 Invited All Polymer Thin Film Transistors Fabricated by High Resolution Ink jet Printing
year: 2008

abstract: All polymer thin film transistors (TFTs) are fabricated by ink jet printing for the first time. Source/drain electrodes are printed using a conducting polymer (PEDOT) solution on substrates with patterned wetting and dewetting regions. A channel length down to 5 /spl mu/m has been achieved without short circuits. The TFTs show a high mobility of 0.02 cm/sup 2//V/spl middot/s and on/off ratio of more than 10/sup 5/ These characteristics are equal or better than reference devices with gold electrodes. The fabrication of printed inverters is also demonstated, in which components such as gate electrodes, interconnections, via holes or resistors, are patterned with the ink jet technique.
author_names: Takeo Kawase

Henning Sirringhaus

Richard H Friend

Tatsuya Shimoda
title: All polymer thin film transistors fabricated by high resolution ink jet printing
venue: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
year: 2000

abstract: All polymer thin film transistors and circuits have been fabricated by inkjet printing. Source, drain and gate electrodes were printed with a solution of conducting conjugated polymer, poly ethylenedioxythiophene (PEDOT) and semiconductor and gate dielectric were spin coated from solutions of conjugated polymer and insulator polymer, respectively. The transistors printed in air show comparable performances to the reference samples with gold electrodes. In order to overcome the resolution limit of inkjet printing, water based PEDOT solution has been deposited onto a pre patterned substrate which defines a channel by wettability contrast between hydrophilic and hydrophobic surface regions. Polymer transistors with a channel length of 5 microns have been achieved by this approach. In order to improve carrier mobility, main chains of the polymer semiconductor were self aligned along the channel direction, and a mobility of 0.02 cm2/V+s has been achieved in the printed transistor. We demonstrate simple printed circuits (inverters) with via holes and load resistors formed by inkjet technology.
author_names: Takeo Kawase

Henning Sirringhaus

Richard H Friend

Tatsuya Shimoda
title: All polymer thin film transistors fabricated by inkjet printing
venue: SPIE Optics Photonics
year: 2001