Query: High-power erbium-doped fiber laser mode locked by a semiconductor saturable absorber

Candidate papers:

abstract: Using an erbium doped fiber laser (EDFL) passively mode locked by a semiconductor saturable absorber, we generate 5.5 ps pulses of a 2.3 nJ/pulse, which are more than three times higher in energy than for other reported EDFL's. We show that, by introduction of a linear loss element within the cavity, multiple pulsing behavior at high pump powers can be suppressed. We also determine the saturable absorber characteristics absorbance versus wavelength near band gap that are necessary to produce short mode locked pulses.
author_names: Brandon C Barnett

L Rahman

M N Islam

Y C Chen

Pallab K Bhattacharya

Will Riha

Karthik Reddy

Arthur T Howe

K A Stair

Hidetoshi Iwamura

Stephen Richard Friberg

Toshiharu Mukai
title: High power erbium doped fiber laser mode locked by a semiconductor saturable absorber.
venue: Optics letters
year: 1995

abstract: We briefly review the recent progress in passively mode locked fiber lasers (PMLFLs) based on semiconductor saturable absorber mirrors (SESAMs) and discuss the detailed characterization of a SESAM based, passively mode locked erbium doped fiber (EDF) laser operating in the 1.5 mm spectral range for various configurations. A simple and compact design of the laser cavity enables the PMLFL to generate either femtosecond or wavelength tunable picosecond pulses with high stability as the intra cavity filtering method is altered. All the cavities investigated in our experiments present self starting, continuous wave mode locking with no Q switching instabilities. The excellent stability of the source eventually enables the wavelength tunable PMLFL to be used as a master oscillator for a power amplifier source based on a large core EDF, generating picosecond pulses of >10 kW peak power and >100 nJ pulse energy.
author_names: Luis A Vazquez-Zuniga

Yoonchan Jeong
title: Wavelength Tunable, Passively Mode Locked Erbium Doped Fiber Master Oscillator Incorporating a Semiconductor Saturable Absorber Mirror
year: 2013

abstract: Two dimensional materials with a sheet structure have excellent optical, electrical and mechanical properties, and have attracted much attention in recent years, especially In2Se3 (the N type semiconductor compound) which has a rapid development in the fields of materials science and optical communication. In this paper, the nonlinear saturation absorption characteristics of In2Se3 are studied. The In2Se3 nanosheet dispersion can be used in ultrafast photonics applications. The nonlinear absorption is measured by power correlation method, and the modulation depth and saturation intensity are 3.8 and 246.6 MW/cm2, respectively. More importantly, In2Se3 is used as a saturable absorber (SA) in a passively mode locked erbium doped fiber laser. The proposed mode locked fiber laser is demenstrated with a center wavelength of 1529.4 nm, a fundamental frequency of 5.9 MHz, a spectral width of 3.96 nm, a pulse width of 1.38 ps, and a signal to noise ratio of 55 dB. For the first time, harmonic mode locking with a high repetition rate of 431 MHz is achieved when the pump power is 360 mW corresponding to 73rd order harmonic mode locking. It can be seen that In2Se3 is indeed a new excellent photonic material, which can be used in fiber optic communication, SAs photonics, laser material processing and light modulators.
author_names: Xiaohui Li

Lirong Jing

Ya-min Wang

Chong Wang

Wenfeng Luo

Peiguang Yan

Mengjia Qu

Ziyan Wu
title: In2Se3 nanosheets for harmonic mode locked fiber laser.
venue: Nanotechnology
year: 2020

abstract: Two dimensional layered metal chalcogenides (LMCs) are widely used in battery anode materials, energy conversion, and semiconductor devices, because of their high energy storage characteristics, high thermoelectric characteristics, and large electron mobility. SnSe2 as a kind of LMC has strong nonlinear optical characteristics. However, its research on dissipative system dynamics as a saturable absorber has not been studied. In this work, we obtained SnSe2 nanosheets using lithium ion intercalation and we reported a passively mode locked fiber laser with SnSe2 as a saturable absorber to achieve the dissipative soliton in a dissipative system. Due to the high third order nonlinearity of SnSe2, the evolution of square wave pulses from 2 to 16 ns was obtained in a fiber ring cavity. Through adjusting the polarization state, the evolution phenomenon of soliton rain, the soliton rain phenomenon with a spectrum of dual wavelengths, and a bound state harmonic phenomenon with a frequency of 313 MHz were obtained. Therefore, the strong nonlinear fiber laser based on SnSe2 provides a good platform for study the pulsation, explosion, rainfall and other phenomena.
author_names: Wenfeng Luo

Xiaoyu Liu

Xiaohui Li

Shuyuan Lv

Wenxiong Xu

Lianzhou Wang

Zhaojiang Shi

Chenxi Zhang
title: SnSe2 realizes soliton rain and harmonic soliton molecules in erbium doped fiber lasers
venue: Nanotechnology
year: 2020

abstract: Ultrafast passively mode locked lasers with spectral tuning capability and high output power have widespread applications in biomedical research, spectroscopy and telecommunications. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs) However, these typically have a narrow tuning range, and require complex fabrication and packaging. A simple, cost effective alternative is to use Single Wall Carbon Nanotubes (SWNTs) and Graphene. Wide band operation is possible using SWNTs with a wide diameter distribution. However, SWNTs not in resonance are not used and may contribute to unwanted insertion losses. The linear dispersion of the Dirac electrons in graphene offers an ideal solution for wideband ultrafast pulse generation. Here, we report graphene saturable absorbers (GSA) for wideband tunable and high power ultrafast pulse generation. Tunable ultrafast pulses are generated with an Erbium doped fiber laser mode locked by GSA.
author_names: Z Sun

X C Lin

Daniel Popa

H J Yu

Tawfique Hasan

Felice Torrisi

Edmund J R Kelleher

Liuping Zhang

L Sun

L Guo

Wei Hou

Jin Li

J R Taylor

Andrea C Ferrari
title: Wideband tunable, high power, graphene mode locked ultrafast lasers
venue: 2011 Conference on Lasers and Electro Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)
year: 2011

abstract: Abstract.Stretched pulse mode locked erbium doped fiber lasers based on monolithically grown InGaAsP/InP semiconductor saturable absorber mirrors are described. The saturable absorbers are used to initiate the mode locking, to stabilize the pulse train and to control the cavity dispersion. We obtained reliable operation at the fundamental repetition rate with 1.3 nJ of pulse energy, limited by the maximum available pump power of 175 mW. The amplitude fluctuation was estimated to be less than 1.6x10 3. 135 fs transform limited pulses were obtained after compression in standard telecommunication fiber. The performance of the stretched pulse mode locked fiber laser with near resonant semiconductor saturable absorber has been studied. A semiconductor dispersive saturable absorber mirror was used for intracavity chirp compensation in the stretched pulse fiber laser. With the semiconductor mirror combining both negative group velocity dispersion and saturable absorption, we have demonstrated the production of high power chirp free pulses directly from stretched pulse laser.
author_names: Mircea D Guina

N Xiang

Oleg G Okhotnikov
title: Stretched pulse fiber lasers based on semiconductor saturable absorbers
year: 2002

abstract: We report on a passively mode locked erbium doped fiber laser, using a high nonlinear modulation depth saturable absorber mirror, in a Fabry Perot cavity. A segment of dispersion compensation fiber is added inside the cavity in order to build a high positive dispersion regime. The setup produced highly chirped pulses with an energy of 1.8 nJ at a repetition rate of 33.5 MHz. Numerical simulations accurately reflect our experimental results and show that pulse shaping in this laser could be interpreted as producing 'dissipative solitons'
author_names: Amelie Cabasse

G Martel

Jean-Louis Oudar
title: High power dissipative soliton in an Erbium doped fiber laser mode locked with a high modulation depth saturable absorber mirror.
venue: Optics express
year: 2009

abstract: A self starting simple structured dual wavelength passively mode locked (ML) erbium doped fiber (EDF) laser is proposed in this Letter. An all fiber ring cavity is adopted and a transmission type semiconductor saturable absorber is used as modelocker. In this laser, there are two gain humps located at the 1530 nm region and the 1550 nm region, respectively. Along with the length of EDF increasing, the intensity of the hump at 1530 nm region is gradually suppressed because of the re absorption of emission by the ground state. With the proper length of EDF, the gain intensities of two regions are very close. When the pump power is above the ML threshold, the self starting dual wavelength ML operation is achieved easily without manual adjustment. The two spectral peaks with close intensities are located at 1532 and 1552 nm, respectively. The effect of intracavity dispersion on the output spectrum is also experimentally demonstrated.
author_names: Shi Junkai

Weihu Zhou
title: Self starting simple structured dual wavelength mode locked erbium doped fiber laser using a transmission type semiconductor saturable absorber
year: 2018

abstract: In this study, a double end pumped high power passively mode locked erbium doped fiber laser (EDFL) was realized by employing a few layered In2Se3 flakes as a saturable absorber (SA) Herein, the uniform large scale In2Se3 flakes were synthesized by the physical vapor deposition (PVD) method. The PVD In2Se3 SA exhibited a remarkable damage threshold of higher than 24 mJ/cm2. Meanwhile, the PVD In2Se3 SA had a modulation depth and saturable intensity of 18.75% and 6.8 MW/cm2, respectively. Based on the In2Se3 SA, the stable bright pulses emitting at 1559.4 nm with an average output power/pulse energy/pulse duration of 122.4 mW/5.8 nJ/14.4 ns were obtained successfully. To our knowledge, 122.4 mW was the new major breakthrough of mode locked Er doped fiber lasers. In addition, this is the first demonstration of the dark bright pulse pair generation based on In2Se3 SA. The maximum average output power of the dark bright pulse reached 121.2 mW, which also showed significant enhancement in comparison with previous works. Our excellent experiment results fully prove the superiority of our experimental design scheme and indicate that the PVD In2Se3 could operate as a promising highly nonlinear photonic material for a high power fiber laser.
author_names: Xile Han

Huanian Zhang

Shouzhen Jiang

Chao Zhang

Dengwang Li

Quanxin Guo

Jinjuan Gao

Baoyuan Man
title: Improved Laser Damage Threshold of In2Se3 Saturable Absorber by PVD for High Power Mode Locked Er Doped Fiber Laser
venue: Nanomaterials
year: 2019

abstract: Q switched and mode locked Erbium doped fiber lasers (EDFLs) were demonstrated using poly(3 hexylthiophene 2,5 diyl) regioregular (P3HT) organic semiconductor in the form of thin film as a saturable absorber (SA) The P3HT thin film is cut into small pieces and sandwiched between two ferrules in EDFL cavity to generate a stable Q switching and mode locking pulse train. By increasing the 980 nm pump power from 63mW to 125mW, the repetition rate of the EDFL increases from 62.97 kHz to 78.63 kHz while the pulse width decreases from 5.52 ms to 3.79 ms. The maximum pulse energy of 15.05 nJ is generated with repetition rate and pulse width of 78.63 kHz and 3.79 ms, respectively. Meanwhile, self starting mode locked EDFL arises as the pump power raises from 125mW to 187mW. As the pump power increases to the maximum, the repetition rate is almost constant of 1.838MHz and pulse width of 2.62 ps are observed. The mode locked EDFL operated at 1563 nm wavelength. This experiment shows that P3HT SA can be used to generate stable Q switched and mode locked pulsed lasers.
author_names: F S M Samsamnuna

N F Zulkiplia

M A M Sarjidanb

S W Haruna

W H A Majidb

M I M A Khudusb

A Shuhaimib

A H A Rosola

M F M Rusdia

A A A Jafryc

M Yasind
title: Poly(3 hexylthiophene 2,5 diyl) regioregular (P3HT) thin film as saturable absorber for passively Q switched and mode locked Erbium doped fiber laser
year: 2019