Query: Effect of temperature on semiconductor

Candidate papers:

abstract: A circuit modeling approach to study the effect of temperature on the modulation dynamics of DH and QW Lasers is attempted using a simple and less time consuming PSPICE circuit simulator.The circuit model is developed from the rate equations for which the temperature dependent parameters are choosen suitably.The DC sweep simulation shows increased threshold current for increase in temperature.At higher temperatures ,the pulse response reveals reduction in optical pulse amplitude and an increase in relaxation oscillations.A reduction in frequency chirp amplitude at increased temperature is also observed.
author_names: M Ganesh Madhan

N Gunasekaran

P R Vaya
title: Circuit modeling of the effect of temperature on semiconductor Lasers
year: 1998

abstract: We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal insulator transition) The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers) in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.
author_names: N V Agrinskaya

Veniamin I Kozub
title: Effect of temperature and magnetic field on disorder in semiconductor structures
year: 2017

abstract: The space time dynamics of electron domains in a semiconductor superlattice is studied in a tilted magnetic field with regard to the effect of temperature. It is shown that an increase in temperature substantially changes the space time dynamics of the system. This leads to a decrease in the frequency and amplitude of oscillations of a current flowing through the semiconductor superlattice. The quenching of oscillations is observed, which is attributed to the change in the drift velocity as a function of electric field strength under the variation of temperature.
author_names: Alexander G Balanov

M T Greenaway

Alexey A Koronovskii

Olga I Moskalenko

A O Sel'skii

T Mark Fromhold

A E Khramov
title: The effect of temperature on the nonlinear dynamics of charge in a semiconductor superlattice in the presence of a magnetic field
year: 2012

abstract: The effect of the temperature and angle of incidence on the photonic band gap (PBG) for semiconductor based photonic crystals has been investigated. The refractive index of semiconductor layers is taken as a function of temperature and wavelength. Three structures have been analyzed by choosing a semiconductor material for one of the two materials in a bilayer structure. The semiconductor material is taken to be ZnS, Si, and Ge with air in first, second, and third structures respectively. The shifting of band gaps with temperature is more pronounced in the third structure than in the first two structures because the change in the refractive index of Ge layers with temperature is more than the change of refractive index of both ZnS and Si layers with temperature. The propagation characteristics of the proposed structures are analyzed by transfer matrix method.
author_names: J V Malik

Kumud Jindal

Vinay Kumar

Vipin Kumar

Arun Kumar

Kh S Singh

Talvinder Singh
title: Effect of Temperature on Photonic Band Gaps in Semiconductor Based One Dimensional Photonic Crystal
year: 2013

abstract: Smart switch chips are widely used in electronic systems. Aiming at the electromagnetic sensitivity of smart switch chips at different temperatures, the influence of ambient temperature on their electromagnetic sensitivity is studied through theoretical analysis and experimental measurement. Combined with the structure and characteristics of smart switch chip, the interference mechanism of radio frequency signal to chip is analyzed, and the influence of ambient temperature on metal oxide semiconductor (MOS) under the action of interference signal is pointed out. Direct power injection (DPI) test is used to test the immunity of the chip. The results show that the changing ambient temperature will affect the MOS transistor's mobility and change its response under electromagnetic interference, resulting in significant drift of the switch chip's electromagnetic sensitivity with environmental temperature changes. The thermal failure of MOS tubes will also affect the test results.
author_names: Z H Gao

P Wu

Jianfei Wu

Hong Li

Hongli Zhang

B Li

X Cai

J Gao
title: Research of Temperature Effect on Electromagnetic Susceptibility of Smart Switch Chip
venue: 2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)
year: 2019

abstract: In this study, we fabricated a humidity sensor using top gate field effect transistor working in subthreshold regime with a dielectric deposited onto the pentacene semiconductor acting as encapsulation layer too. The device is characterized at room temperature with different humidity rate (RH) The results showed that the subthreshold current (Ioff) level depends on the humidity rate especially due to the concomitant change of dielectrique leakage current and semiconductor conductivity. From 10% 90% of humidity rate, we observe an increase of subthreshold current after 25% of RH, and this increase was found to be reversible by pumping down. However, the electrical parameters such as mobility and threshold voltage remain unchanged under humid environment. The results obtained in this work show for the first time, to our knowledge this kind of behavior in OFET top gate devices, pointing out the combination effects of both leakage current and conductivity increasing.
author_names: Mohsen Erouel

Abdou Karim Diallo

El Hadji Babacar Ly

Mane Seck
title: Humidity Sensor Using Subthreshold Regime of Flexible Organic Field Effect Transistor: Concomitant Effect of Gate Leakage Current and Semiconductor Conductivity
venue: 2019 IEEE International Conference on Design Test of Integrated Micro Nano Systems (DTS)
year: 2019

abstract: Abstract The operating behavior of a silicon surface barrier semiconductor detector of 5 mm thick depletion depth has been studied over the temperature range from 270 to 313 K by recording the spectrum of 24.8 MeV protons. The temperature of the detector was controlled and measured by a PC based temperature controller. The analysis of the recorded spectra shows that the centroid of the proton energy peak remains constant up to certain optimum temperature and falls down rapidly to the lower channels beyond the optimum temperature. The resolution of the detector was found to degrade from 0.5% to 4.9% The observed degradation is found to be related to the increase in leakage current due to rise in the detector temperature.
author_names: K Udaykumar

Basavaraj Rachappa Kerur

S M Hangodimath

M T Lagare

Suneel Kumar Srivastava

S V S Nageshwara Rao

A Mandal

D K Avasthi
title: The effect of temperature on the behavior of semiconductor silicon surface barrier detectors
year: 2003

abstract: In this work, the annealing effects of e beam deposited Ta<sub>2</sub>O<sub>5</sub> films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 degC showed the best stoichiometry (Ta<sub>1.96</sub>O<sub>5.04</sub> compared to the as deposited film and the films annealed till 600 degC. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 degC and became polycrystalline above 700 degC. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 degC, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 degC resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM) Therefore, the annealing temperature of 700 degC was found to be the optimum annealing temperature for the e beam deposited Ta<sub>2</sub>O<sub>5</sub> films.
author_names: Narendra Kumar

Abhay Tiwari

Jitendra Kumar

Siddhartha Panda
title: Effect of post deposition annealing temperature of e beam evaporated Ta2O5 films on sensitivities of electrolyte insulator semiconductor devices
venue: 2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)
year: 2015

abstract: Germanium metal insulator semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high k films may degrade the interface and result in higher leakage current.
author_names: E Wei

Bing-Yue Tsui

Pin-Jiun Wu
title: Effect of formation temperature on quality of gate dielectric on germanium substrate
venue: 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
year: 2016

abstract: We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon nanowire (Si NW) The planar TE generators are driven by the temperature gradient along the Si NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si NW length and metal wiring structure are also discussed.
author_names: Katsuki Abe

Kaito Oda

Motohiro Tomita

Takeo Matsuki

Takashi Matsukawa

Takanobu Watanabe
title: 4 4 Effect of Unit cell Arrangement on Performance of Multi stage planar Cavity free Unileg Thermoelectric Generator Using Silicon Nanowires
venue: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
year: 2020