Query: Semiconductor Devices: Physics and Technology

Candidate papers:

abstract: Preface. Introduction. PART I: SEMICONDUCTOR PHYSICS. Energy Bands and Carrier Concentration in Thermal Equilibrium. Carrier Transport Phenomena. PART II: SEMICONDUCTOR DEVICES. p n Junction. Bipolar Transistor and Related Devices. MOSFET and Related Devices. MESFET and Related Devices. Microwave Diodes, Quantum Effect, and Hot Electron Devices. Photonic Devices. PART III: SEMICONDUCTOR TECHNOLOGY. Crystal Growth and Epitaxy. Film Formation. Lithography and Etching. Impurity Doping. Integrated Devices. Appendix A: List of Symbols. Appendix B: International Systems of Units (SI Units) Appendix C: Unit Prefixes. Appendix D: Greek Alphabet. Appendix E: Physical Constants. Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K. Appendix G: Properties of Si and GaAs at 300 K. Appendix H: Derivation of the Density of States in Semiconductor. Appendix I: Derivation of Recombination Rate for Indirect Recombination. Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant Tunneling Diode. Appendix K: Basic Kinetic Theory of Gases. Appendix L: Answers to Selected Problems. Index.
author_names: S M Sze
title: Semiconductor Devices: Physics and Technology
year: 1985

abstract: The Planar Technology. Solid State Technology. Vapor Phase Growth. Thermal Oxidation. Solid State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non Equilibrium Conditions. p n Junction. Junction Transistor. Junction Field Effect Transistors. Surface Effects and Surface Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p n Junctions. Surface Field Effect Transistors. Properties of the Silicon Silicon Dioxide System.
author_names: Andrew S Grove
title: Physics and Technology of Semiconductor Devices
year: 1967

author_names: David C Northrop
title: Book Review: Semiconductor Devices Physics and Technology
year: 1986

title: Book Review: Semiconductor Devices: Physics and Technology
year: 1987

abstract: The physics and technology of metal/semiconductor interfaces are key points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n type and p type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.
author_names: Fabrizio Roccaforte

Marilena Vivona

Giuseppe Greco

Raffaella Lo Nigro

Filippo Giannazzo

Simone Rascuna

M Saggio
title: Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
year: 2018

author_names: Halyna M Khlyap
title: Physics and Technology of Semiconductor Thin Film Based Active Elements and Devices
year: 2012

abstract: Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off state current. C axis aligned crystalline (CAAC) IGZO enables aggressive down scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC IGZO in flatpanel displays and LSI devices.
author_names: Noboru Kimizuka

Shunpei Yamazaki
title: Physics and Technology of Crystalline Oxide Semiconductor CAAC IGZO: Fundamentals
year: 2016

abstract: SCD has developed a range of advanced infrared detectors based on III V semiconductor heterostructures, grown on GaSb. The XBn/XBp family of detectors enables diffusion limited behavior with dark currents comparable with MCT Rule 07 and with high quantum efficiencies. InAsSb/AlSbAs based XBn focal plane array detectors with a cut off wavelength of 4.1 mm and formats presently up to 1024x1280 15 mm, operate with background limited performance up to ~175 K at F/3. They have a sensitivity and image quality comparable with those of standard InSb detectors working at 77K. In an XBp configuration, the same concept has been applied to an InAs/GaSb type II superlattice (T2SL) detector with a cut off wavelength of 9.5 mm, which operates with background limited performance up to ~100 K at F/2. In order to design our detectors effectively, a suite of simulation algorithms was developed based on the k p and optical transfer matrix methods. In a given T2SL detector, the complete spectral response curve can be predicted essentially from a knowledge of the InAs and GaSb layer widths in a single period of the superlattice. Gallium free T2SL detectors in which the GaSb layer is replaced with InAs1 xSbx (x 0.15 0.5) have also been simulated and the predicted spectral response compared for the two detector types.
author_names: P C Klipstein
title: Physics and technology of antimonide heterostructure devices at SCD
venue: SPIE OPTO
year: 2015

abstract: Semiconductor physics is the basis for semiconductor science and technology and semiconductor devices just like the cornerstone of entire the electronics industry and the information society. Considering "Semiconductor devices physics" is an important required course of micro electronics and other similar specialties, it is necessary to improve the teaching methods and content. With the development of the computer, it is necessary to apply computer aided instruction in the semiconductor devices physics. It is useful for the qualitative analysis and quantitative computation with application of MATLAB software, which will help students deepen their understanding and grasp the knowledge. Utilizing the MATLAB software, students can analyze and solve many problems in semiconductor physics and devices. This article is discussed the application of MATLAB software in the course of "Semiconductor Devices Physics" in detail, including in the physics of semiconductor and the semiconductor devices. Teaching practice shows that the application of MATLAB can improve teaching effectiveness and methods effectively, can active classroom ambience and mobilize the enthusiasm of the students and the spirit of the research.
author_names: Ying Tang

Tieying Ma

Yiling Sun

Weiming Shen
title: Application of MATLAB in teaching of semiconductor devices physics
venue: 2010 International Conference on E Health Networking Digital Ecosystems and Technologies (EDT)
year: 2010

abstract: Power Semiconductor Devices Key Components for Efficient Electrical Energy Conversion Systems. Semiconductor Properties. pn Junctions. Short introduction to power device technology. pin Diodes. Schottky Diodes. Bipolar Transistors. Thyristors. MOS Transistors. IGBTs. Packaging and Reliability of Power Devices. Destructive Mechanisms in Power Devices. Power Device Induced Oscillations and Electromagnetic Disturbances. Power Electronic Systems. Appendix. Index.
author_names: Josef Lutz

Heinrich Dr Schlangenotto

Uwe Scheuermann

Rik W De Doncker
title: Semiconductor Power Devices: Physics, Characteristics, Reliability
year: 2011