Query: UV-vis perovskite

Candidate papers:

abstract: The CH3NH3PbI3 based photodetectors were fabricated with a coplanar metal semiconductor metal (MSM) IDT patterned Au electrode configuration. The MSM structured perovskite based photodetectors exhibited a higher Ion/Ioff of about 3.77 x 102, and a response of 6.66 mA/W. Additionally, the photodetectors worked best under red illumination, and the rise and decay times were estimated to shorter than 0.04 s and 0.05 s. Especially, the durability and stability of these photodetectors were excellent, which can be exposed to the red light illumination over 1000 s. There were still stable photocurrent signal after 90 days. It indicated that the device possessed a longer durability and had a lifetime of exceeding 90 days. These outstanding performances could be potentially applicable for practical applications.
author_names: Fuqiang Guo

Xiaohang Li

Baohua Zhang

Lili Zhang

Haineng Bai

Zheng Guo Zhang

Qian Yang

Yang Tan

Xuebo Liu

Yihua Song

Yineng Huang
title: Durable and stable UV Vis perovskite photodetectors based on CH3NH3PbI3 crystals synthesized via a solvothermal method
venue: Journal of Materials Science: Materials in Electronics
year: 2019

abstract: Low dimensional lead free organic inorganic hybrid perovskites have gained increasing attention as having low toxicity, ease of processing, and good optoelectronic properties. Seeking for lead free and narrow band gap organic inorganic hybrid perovskites are of great importance for the development and application of photoelectric materials. Here, we reported a Sb based organic inorganic hybrid perovskite (MV)[SbI3Cl2] which has one dimensional inorganic frameworks of the I sharing double octahedra. (MV)[SbI3Cl2] shows a narrow direct band gap of 1.5 eV, and displays obvious photoresponse for the 532 nm light with rapid response speed of trise 0.69 s, tdecay 0.28 s. With an illumination power of 5 mW and a 50 V bias, the responsivities (R) and external quantum efficiency (EQE) for (MV)[SbI3Cl2] photodetector under 532 nm laser are 29.75 mA/W and 6.69% respectively. This Sb based halide double perovskite material will provide an alternative material for photodetector devices.
author_names: Yun Lei

Shouyu Wang

Jie Xing

Hanqi Xu

Jing Han

Weifang Liu
title: High Performance UV Vis Photodetectors Based on a Lead Free Hybrid Perovskite Crystal (MV)[SbI3Cl2]
venue: Inorganic chemistry
year: 2020

abstract: Organolead halide perovskite has recently emerged as a star material for various photoelectronic devices owing to its excellent optical and electronic properties. However, it is challenging to deve.
author_names: Fobao Huang

Ying-quan Peng

Guohan Liu
title: Toward Ultrahigh Sensitivity and UV Vis NIR Broadband Response of Organolead Halide Perovskite/Tin Phthalocyanine Heterostructured Photodetectors
venue: The Journal of Physical Chemistry C
year: 2019

abstract: A lateral photodetector based on the bilayer composite film of a perovskite and a conjugated polymer is reported. It exhibits significantly enhanced responsivity in the UV vis region and sensitive photoresponse in the near IR (NIR) region at a low applied voltage. This broadband photodetector also shows excellent mechanical flexibility and improved environmental stability.
author_names: Shan Chen

Changjiu Teng

Miao Zhang

Yingru Li

Dan Xie

Gaoquan Shi
title: A Flexible UV Vis NIR Photodetector based on a Perovskite/Conjugated Polymer Composite.
venue: Advanced materials
year: 2016

abstract: Methylammonium lead halide perovskites have been reported to be promising candidates for high performance photodetectors. However, self powered broadband ultraviolet visible near infrared (UV Vis NIR) photodetection with high responsivity is difficult to achieve in these materials. Here, we demonstrate, for the first time, a novel trilayer hybrid photodetector made by combining an n type Si wafer, TiO2 interlayer and perovskite film. By precisely controlling the thickness of the TiO2 layer, enhanced separation and reduced recombination of carriers at the Si perovskite interface are obtained. As a result, perovskite film, when combined with a low bandgap Si, extends the wavelength range of photo response to 1,150 nm, along with improved on/off ratio, responsivity, and specific detectivity, when compared to pristine perovskite. Results obtained in this work are comparable or even better than those reported for perovskite based UV Vis NIR photodetectors. In particular, the hybrid photodetectors can operate in a self powered mode. The mechanism of enhancement has been explored and it is found that the increased separation and reduced recombination of photogenerated carriers at the junction interface leads to the improved performance.
author_names: Fengren Cao

Qingliang Liao

Kaimo Deng

Liang Chen

Liang Li

Yue Kan Zhang
title: Novel perovskite/TiO2/Si trilayer heterojunctions for high performance self powered ultraviolet visible near infrared (UV Vis NIR) photodetectors
venue: Nano Research
year: 2018

abstract: DOI: 10.1002/adom.201800324 yields with narrow emission bandwidth, size tunable optical properties, strong optical absorption, and more impor tantly, good environmental stabilities.[1 3] They have also been applied to develop high performance solar cells, light emit ting diodes (LEDs) and lasers.[4 7] Several recent works[8 11] have pioneered the appli cation of IPQDs in photodetectors with vertical (photodiode) and lateral (photo conductor and photo transistor) device structures. However, most of them show low responsivity up to 0.64 A W 1. The reported responsivities of IPQD devices are limited by poor carrier mobility due to the choice of interparticle ligand mate rials and high density of defect states.[12] To develop highresponsivity photodetec tors, it is vital to increase carrier diffu sion length. One approach is to decrease the density of defects and increase car rier mobility, which has been a prevalent research topic.[13] However, an alternative method to increase responsivity is to separate electrons and holes into different paths and suppress radiative recombination with the aid of layered heterojunction (LHJ)[14] This strategy should facili tate the extractions of generated carriers and thus increase the photocurrent. There are some recent works adopting this strategy and thus improving the responsivity. Zhou et al.[15] fab ricated CsPbBr3 QD/TiO2 compositebased photodetectors and obtained a 44fold responsivity enhancement compared to pris tine CsPbBr3 QD photodetectors over the detection range from 350 to 550 nm. Chen et al.[16] reported hybrid phototransistors based on CsPbBr3 QD/DTT heterojunctions and achieved the responsivity up to 1.7 x 104 A W 1, however, the detection range only reached up to green wavelength on the long side. Kwak et al.[17] fabricated CsPbBr3 xIx QD/graphene bilayer photode tectors, exhibiting a very high responsivity (108 A W 1) but a decent onoff ratio, the detection wavelength range is limited up to 650 nm. These findings encourage us to use a LHJ film in the photodetector to enhance the performance. Although such IPQDbased hybrid photodetectors exhibit high respon sivity, the detection wavelength regions are still restricted to ultravioletvisible (UV vis) range and cannot reach near infrared (NIR) region. Furthermore, among all reported IPQD detectors, few of them are based on CsPbI3 QDs and targeted All inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high performance phototransistor based on a layered heterojunction composed of CsPbI3 QDs and a narrow bandgap conjugated polymer DPP DTT is reported, which shows a high responsivity of 110 A W 1, a specific detectivity of 2.9 x 1013 Jones and a light to dark current ratio up to 6 x 103. The heterojunction phototransistor exhibits unipolar p type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range from ultraviolet to near infrared. The high sensitivity of the device is attributed to the layered heterojunction and the gate bias modulation property. The work overcomes the existing limitations in sensitivity of IPQD photodetectors due to the poor charge transport between QDs. The convenient solution processed fabrication and excellent device performance especially suggest the IPQD/narrow bandgap conjugate polymer heterojunction as a promising structure for potential applications of ultrasensitive broadband photodetectors compatible with a wide variety of substrates.
author_names: Chen Zou

Yuyin Xi

Chun-Ying Huang

Ethan G Keeler

Tianyu Feng

Shihao Zhu

Lilo D Pozzo

Lih Y Lin
title: A Highly Sensitive UV vis NIR All Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction
year: 2018

abstract: Hybrid organic inorganic perovskites have been demonstrated as promising candidates for broadband responsive photodetectors. It is critical to develop perovskite based photodetectors with excellent photodetection capability and facile fabrication processes for practical application. Herein, we designed and fabricated, for the first time, a hybrid photodetector consisting of electrospun ZnO nanofibers and perovskites. Compared to pristine ZnO or perovskite, the hybrid photodetector showed increased on off ratio, faster response speed, and higher responsivity and detectivity. The performance of the hybrid devices was significantly enhanced by using quasi aligned ZnO nanofiber arrays instead of disordered nanofibers, which provide efficient charge transfer between the perovskite and ZnO, shorter transmission paths, and reduced carrier loss at cross junctions of nanofibers. Our results provide a new and promising route to integrate inorganic functional materials with perovskite for high performance and low cost photodetectors.
author_names: Fengren Cao

Wei Tian

Bangkai Gu

Yulong Ma

Hao Lu

Liang Li
title: High performance UV vis photodetectors based on electrospun ZnO nanofiber solution processed perovskite hybrid structures
venue: Nano Research
year: 2017

author_names: Feng-xia Liang

Lin Liang

Xing-yuan Zhao

Lin-Bao Luo

Yu-Hung Liu

Xiao-Wei Tong

Zhi-Xiang Zhang

J C Huang
title: A Sensitive Broadband (UV vis NIR) Perovskite Photodetector Using Topological Insulator as Electrodes
year: 2018

abstract: We report a high performance phototransistor based on a layered heterojunction composed of all inorganic perovskite quantum dots (IPQDs) and a narrow bandgap conjugated polymer DPP DTT. The device exhibits stable and excellent optoelectronic properties with broadband photodetection range.
author_names: Chen Zou

Yuyin Xi

Lilo D Pozzo

Lih Y Lin
title: Highly Sensitive UV Vis NIR Inorganic Perovskite Quantum Dot Phototransistors Based on Layered Heterojunctions
venue: 2018 Conference on Lasers and Electro Optics (CLEO)
year: 2018

abstract: We present an investigation of the ultrafast charge carrier dynamics for the one third metal deficient lead free perovskite (CH3NH3)3Bi2I9 on mesoporous TiO2. Excitation of the perovskite at 400 or 505 nm leads to characteristic second derivative type spectral features in the transient absorption spectra, suggesting substantial contributions of bound excitons, in contrast to the widely used lead based perovskites. The immediate appearance of broad NIR absorption is assigned to TiO2 conduction band electrons formed by instantaneous dissociation of a subpopulation of excitons at the perovskite/TiO2 interface. Excitation with excess energy above the perovskite's band gap opens up an additional fast (70 fs) exciton dissociation channel with about 26% amplitude. Antisolvent assisted synthesis of (CH3NH3)3Bi2I9 reduces the crystallite size to about 500 nm but has only a minor effect on the carrier dynamics. The results suggest that photovoltaic applications of this material will likely require bulk heterojuncti.
author_names: Mirko Scholz

Oliver Flender

Kawon Oum

Thomas Lenzer
title: Pronounced Exciton Dynamics in the Vacancy Ordered Bismuth Halide Perovskite (CH3NH3)3Bi2I9 Observed by Ultrafast UV vis NIR Transient Absorption Spectroscopy
year: 2017