Query: A bright future for organic field-effect transistors

Candidate papers:

abstract: Field effect transistors are emerging as useful device structures for efficient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin films. In particular, organic light emitting field effect transistors are a new class of electro optical devices that could provide a novel architecture to address open questions concerning charge carrier recombination and light emission in organic materials. These devices have potential applications in optical communication systems, advanced display technology, solid state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light emitting field effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.
author_names: Michele Muccini
title: A bright future for organic field effect transistors
venue: Nature materials
year: 2006

abstract: Freestanding, substrate free organic field effect transistors and organic circuits with a nominal thickness of 320 nm are demonstrated by using a simple water floatation method. The devices work well in freestanding status, attached on banknotes, or bent over the blade of a knife. The ultralight devices with extreme bending stability indicate a bright future for organic electronics.
author_names: Libo Zhang

Hanlin Wang

Yan Zhao

Yunlong Guo

Wenping Hu

Gui Yu

Yunqi Liu
title: Substrate free ultra flexible organic field effect transistors and five stage ring oscillators.
venue: Advanced materials
year: 2013

abstract: Manufacturing organic circuits from solution provides an opportunity to realize low cost fabrication of large area flexible electronics, such as radio frequency identity tags, sensor arrays and flexible displays. Inspired by the potential applications, significant efforts have been devoted to develop organic field effect transistors with solution processed components in the past decade. Herein, we summarize recent progresses in solution processable functional materials including organic semiconductors, electrode materials, and dielectric materials. Various solution manufacturing techniques, patterning techniques and related device engineering methods are also reviewed. Finally, all solution processed logic circuits are discussed from the point of view of practical application. All these achievements represent a big step forward and promise the solution processed OFETs a bright future.
author_names: Lei Zhang

Chong-an Di

Gui Yu

Yunqi Liu
title: Solution processed organic field effect transistors and their application in printed logic circuits
year: 2010

abstract: Today,when the information technology has accessed to the rapid development,organic field effect transistor(OFET)with the bright prospect has got the rapid process. The structure and operating principle of OFET are introduced in this paper. The application and future developments of OFET are also described.
author_names: Huang Jin-zhao
title: Reseach on Organic Field Effect Transistors
year: 2007

abstract: Abstract Since the discovery of conductivity in organic molecules in the 1980s, the field of organic electronics has witnessed immense advancement. The main reason for such growth is the possibility of designing and developing innumerable functional organic materials. Today, almost all possible optoelectronic applications have been developed using various organic materials, and many of them have been commercialized for use in day to day lives of common people. This chapter summarizes a series of functional organic materials used in high efficiency solar cell devices, bright light emitting diodes (LEDs) high mobility and high ON/OFF ratio field effect transistors (FETs) and resistive random access memory (ReRAM) devices for switching applications. This chapter will be a guide to further improve the properties of functional organic materials for better performances in future.
author_names: Ritesh Kant Gupta

Rahul Narasimhan Arunagirinathan

Mohammad Adil Afroz

Rabindranath Garai

Anwesha Choudhury

Maimur Hossain

Ramesh Babu Yathirajula

Parameswar Krishnan Iyer
title: Functional materials for various organic electronic devices
year: 2021

abstract: We have fabricated ambipolar light emitting field effect transistors made of 1,4 bis(5 phenylthiophen 2 yl)benzene (AC5) single crystals, which have 35% fluorescent quantum efficiency. The obtained hole and electron mobilities were 2.9x10 1 cm2/V s and 6.7x10 3 cm2/V s, respectively. These are the highest values among AC5 transistors. Importantly, although the light emission from the crystal surface was less than the detection level of the camera, we observed bright and polarized light emission from the edge of the single crystals. This polarized edge emission is attributed to the strong self assembled light confining nature and perfectly aligned transition dipole moments, which are advantageous for future laser devices.
author_names: Yohei Yomogida

Taishi Takenobu

Hidekazu Shimotani

Kosuke Sawabe

Satria Zulkarnaen Bisri

Takeshi Yamao

Shu Hotta

Yoshihiro Iwasa
title: Green light emission from the edges of organic single crystal transistors
year: 2010

abstract: Abstract Green materials have great potential to become a primary research area for bioelectronic integration. Over the last three decades, bioelectronic applications have been getting great interest due to their low cost, flexible, nontoxic, large volume electronic components that are sustainable, biocompatible, biodegradable, and bioresorbable. Therefore the versatility of bioelectronics applications, such as organic field effect transistors and biosensors, promises a bright future. This chapter will highlight recent progress in the natural materials and some of their applications in bioelectronics devices. The key strategies and the forecast perspectives of this research field are also briefly summarized.
author_names: Tugbahan Yilmaz

Mahmut Kus
title: Advanced applications of green materials in bioelectronics applications
year: 2021

abstract: To enhance electron injection in n type organic field effect transistors (OFETs) nonconjugated polyelectrolyte (NPE) layers are interposed between a [6,6] phenyl C61 butyric acid methyl ester (PCBM) layer and Au electrodes. A series of NPEs based on an ethoxylated polyethylenimine backbone with various counterions, including Cl Br and I improve electron mobilities up to 10 2 cm2 V 1 s 1 and yield on off ratios (Ion/Ioff) of 105 in PCBM OFETs. Ultraviolet photoelectron spectroscopy reveals that all of the NPEs lead to reduced electron injection barriers (phe) at the NPE/metal interface; this reduction in phe is consistent with dipole formation or n type doping at the electrode interface. Absorption measurements of PCBM films treated with NPEs are consistent with n doping of the PCBM. Regardless of the type of anion, thick NPE layers lead to high conductivity in the films independent of gate bias, whereas thin NPE layers lead to dramatically improved electron injection and performance. These results demonstrate that thin polyelectrolyte layers can be used to achieve controlled interfacial doping in organic semiconductors. Furthermore, this study provides valuable information about the function of NPEs, which may be exploited to improve device performance and to design new materials for future use in optoelectronic devices.
author_names: Yu Jung Park

Myoung Joo Cha

Yung Jin Yoon

Shinuk Cho

Jin Young Kim

Jung Hwa Seo

Bright Walker
title: Improved Performance in n Type Organic Field Effect Transistors via Polyelectrolyte Mediated Interfacial Doping
year: 2017

abstract: Abstract Flexible pressure sensors based on organic field effect transistors (OFETs) have emerged as promising candidates for electronic skin applications. However, it remains a challenge to achieve low operating voltages of hysteresis free flexible pressure sensors. Interface engineering of polymer dielectrics is a feasible strategy toward sensitive pressure sensors based on low voltage OFETs. Here, a novel type of solution processed bilayer dielectrics is developed by combining a thick polyelectrolyte layer of polyacrylic acid (PAA) with a thin poly(methyl methacrylate) (PMMA) layer. This bilayer dielectric can provide a vertical phase separation structure from hydrophilic interface to hydrophobic interface which adjoins well to organic semiconductors, leading to improved stability and remarkably reduced leakage currents. Consequently, OFETs using the PMMA/PAA dielectrics reveal greatly suppressed hysteresis and improved mobility compared to those with a pure PAA dielectric. Using the optimized PMMA/PAA dielectric, flexible OFET based pressure sensors that show a record high sensitivity of 56.15 kPa 1 at a low operating voltage of 5 V, a fast response time of less than 20 ms, and good flexibility are further demonstrated. The salient features of high capacitance, good dielectric performance, and excellent reliability of the bilayer dielectrics promise a bright future of flexible sensors based on low voltage OFETs for wearable electronic applications.
author_names: Zhigang Yin

Ming-Jie Yin

Ziyang Liu

Yangxi Zhang

A Ping Zhang

Qingdong Zheng
title: Solution Processed Bilayer Dielectrics for Flexible Low Voltage Organic Field Effect Transistors in Pressure Sensing Applications
venue: Advanced science
year: 2018

abstract: In this study, NiO/PVC nano hybrid composites have been synthesized through sol gel method. Nano crystallites phases, crystallinity and electrical properties have been characterized using X ray diffraction, Fourier transfer infrared radiation, scanning electron microscopy and atomic force microscopy techniques. The dielectric constant of the samples has been calculated through measuring the capacity of samples by application of GPS 132 A. Obtained results have indicated that an NiO/PVC sample with 5 g NiO and 0.02 g PVC, equivalent to 0.4 %wt PVC, in weight synthesis, at a temperature of 80 degC has a higher dielectric constant, better surface morphology, less rough surface, less leakage current, and thus has potential to be suggested as a possible gate dielectric material for future organic field effect transistor devices.
author_names: Amir Hayati

Ali Bahari
title: Electrical properties of NiO/PVC nano hybrid composites for organic field effect transistors
year: 2015