Query: Mobility calculated with  effect

Candidate papers:

abstract: Carrier mobility in an amorphous metal oxide semiconductor (AOS) thin film transistor (TFT) was analyzed using the Hall effect. First, an amorphous Ga Sn O (a GTO) TFT and that with four electrodes arranged in a square shape are fabricated. Next, a transistor characteristic of the a GTO TFT is measured, and field effect mobility <inline formula> <tex math notation="LaTeX"\mu _{\text {FE} /tex math>/inline formula> is calculated. Moreover, the Hall effect of the a GTO TFT with the four electrodes is measured using a van der Pauw method, and Hall mobility <inline formula> <tex math notation="LaTeX"\mu _{\text {Hall} /tex math>/inline formula> is calculated. Finally, it is found that the dependence of <inline formula> <tex math notation="LaTeX"\mu _{\text {FE} /tex math>/inline formula> on the gate voltage <inline formula> <tex math notation="LaTeX"\text{V}_{\text {gs} /tex math>/inline formula> is similar to that of <inline formula> <tex math notation="LaTeX"\mu _{\text {Hall} /tex math>/inline formula> and the carrier mobility <inline formula> <tex math notation="LaTeX"\mu /tex math>/inline formula> increases as V<sub>gs</sub> increases. In conclusion, it is suggested that <inline formula> <tex math notation="LaTeX"\mu /tex math>/inline formula> in the AOS TFT is strongly subject to the percolation path in the channel layer.
author_names: Kota Imanishi

Tokiyoshi Matsuda

Mutsumi Kimura
title: Analysis of Carrier Mobility in Amorphous Metal Oxide Semiconductor Thin Film Transistor Using Hall Effect
venue: IEEE Electron Device Letters
year: 2020

abstract: Dirac like electrons in Bi Sb alloys are extremely effective in generating spin current and have large spin current mobility. We have studied the charge to spin conversion in Bi1 xSbx/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi1 xSbx. The SHC increases with increasing Bi1 xSbx thickness before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present, play little role. Unexpectedly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of thermally excited Dirac like electrons in the L valley of the narrow gap Bi1 xSbx alloy.
author_names: Zhendong Chi

Yong-Chang Lau

Xiandong Xu

Tadakatsu Ohkubo

Kazuhiro Hono

Masamitsu Hayashi
title: The spin Hall effect of Bi Sb alloys driven by thermally excited Dirac like electrons
venue: Science Advances
year: 2020

abstract: In the light of variable temperature (4.2 300 K) Hall effect measurements a physics based model for Hall mobility of indium oxide (In2O3) thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 1019cm 3, Hall mobility is chiefly confined to scattering by ionized impurities.
author_names: Lei Qiang

Yanli Pei

Ruohe Yao
title: Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition
venue: The European Physical Journal Applied Physics
year: 2019

abstract: The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1 xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy. The electrical conductivity (s) the activation energies (Ea1, Ea2) Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increase films thickness was fond to increase the electrical conductivity whereas the activation energy (Ea) would vary with films thickness. Hall Effect analysis results of CIGS films show all films were (p type) and both Hall mobility and the carrier concentration increase with the increase of films thickness
author_names: Bushra K Hassan Al-Maiyaly

Iman Hameed Khudayer

Ali H Abd Alrazak
title: Effect of Thickness on the Electrical Conductivity and Hall Effect Measurements of (CIGS) Films
year: 2017

abstract: Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p type conduction occurs in tail to tail charged domain walls. By calibration of the AFM signal, an upper estimate of ~1 x 1016 cm 3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of~50 cm2V 1s 1 is calculated, about an order of magnitude below equivalent carrier mobilities in p type silicon, but sufficiently high to preclude carrier lattice coupling associated with small polarons.
author_names: Michael Campbell

James P V McConville

Raymond G P McQuaid

D Prabhakaran

Anil R Kumar

J Marty Gregg
title: Hall effect in charged conducting ferroelectric domain walls
venue: Nature communications
year: 2016

abstract: Hall effect sensors are used in many applications because they are based on an ideal magnetic field sensing technology. The most important factor that determines their sensitivity is the material of which the sensor is made. Properties of the material such as carrier concentration, carrier mobility and energy band gap all vary with temperature. Thus, sensitivity is also influenced by temperature. In this study, current related sensitivity and voltage related sensitivity were calculated in the intrinsic region of temperature for two commonly used materials, i.e. Si and GaAs. The results showed that at the same temperature, GaAs can achieve higher sensitivity than Si and it has a larger band gap as well. Therefore, GaAs is more suitable to be used in applications that are exposed to different temperatures.
author_names: Awadia Ahmed Ali

Guo Yanling
title: Study of Hall Effect Sensor and Variety of Temperature Related Sensitivity
year: 2017

abstract: Two methods of measuring the electronic transport properties of a material are transistor DC voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can be done by electrostatic doping to lower resistance in the channel. We show that by measuring both, we can compare any value (raw measured as well as calculated data) directly to any other value along an index of FET gate and drain voltage across the entire safe operating area of the device. Our gated Hall technique intrinsic calculations of Hall mobility, typically possible only for bulk or doped materials, for thin film transistor materials stack up with thickness scaled to practical values.
author_names: J Anders

Marian K Kazimierczuk

Kevin D Leedy

Nicholas C Miller

T A Cooper

M Streby

Michael L Schuette
title: Gated Hall and field effect transport characterization of e mode ZnO TFTs
year: 2020

abstract: Conductivity, Hall effect, and transverse magnetoresistance were measured on evaporated polycrystalline CdSe films between 80 and 700 K. The mobility calculated from magnetoresistance is different in magnitude and temperature dependence from that calculated from conductivity and Hall effect, since the latter one is not only determined by the scattering mechanisms but also by the numbers and properties of potential barriers at crystallite boundaries. The analysis of magnetoresistance shows that at low temperatures the electron mobility is controlled by impurity scattering and at high temperatures by optical phonon scattering. Scattering by ionized impurities considerably influences the mobility at room temperature.
author_names: G Janiche

H Berger
title: Magnetoresistance, Hall Effect, Conductivity, and Mobility in Polycrystalline CdSe Films
year: 1969

abstract: Abstract The local electron temperature distribution is calculated considering a two dimensional electron system in the integer quantum Hall regime in presence of disorder and uniform perpendicular magnetic fields. We solve thermo hydrodynamic equations to obtain the spatial distribution of the local electron temperature in the linear response regime. It is observed that, the variations of electron temperature exhibit an antisymmetry regarding the center of the sample in accordance with the location of incompressible strips. To understand the effect of sample mobility on the local electron temperature we impose a disorder potential calculated within the screening theory. Here, long range potential fluctuations are assumed to simulate cumulative disorder potential depending on the impurity atoms. We observe that the local electron temperature strongly depends on the number of impurities in narrow samples. Graphic abstract The electron temperature $T_e$ T e versus position calculated for different values of the modulation potential $V_0$ V 0 The calculations are done at $T_\mathrm{L} 0.04 ,E_F^0/k_B$ T L 0.04 E F 0 k B lattice temperature considering impurity $N_l 6600$ N l 6600 and repeated for three different values of magnetic field \hbar \omega _c/E_F^0 0.80$ h o c E F 0 0.80 0.85 and 0.90. The insets show the enlarged region for the left side.
author_names: N Boz Yurdasan

Sinem Erden Gulebaglan

Afif Siddiki
title: The effect of disorder on local electron temperature in quantum Hall systems
year: 2019

abstract: The principle of the Hall effect and its application to the characterization of semiconductors are described. The physical origin of the Hall effect, discovered by Edwin H. Hall in 1879, is the Lorentz force acting on the charge carriers in a solid. The Hall voltage, which is generated perpendicular to the current flow in the sample, is proportional to the carrier mobility in the sample. Its sign depends on the type of the (majority) charge carrier (electrons or holes) and can be used to determine if a semiconductor is n or p type. From the measured Hall voltage, the carrier concentration n of the Hall sample can be determined. In combination with a conductivity (s) measurement, the Hall mobility mH of the sample can be calculated according to m s/(qn) Though in principle simple, the preparation of the Hall measurement samples and the interpretation of the measurements needs some care and the appropriate theory for the charge carrier transport in semiconductors. The normal Hall effect can be explained by a semiclassical theory, while the quantum Hall effect, discovered by von Klitzing in 1980, is a true quantum effect, which occurs only at very high fields at low temperatures in two dimensional electron gases. The so called von Klitzing constant RK h/e2 25812.807557(18) O, which is extracted from a quantum Hall measurement, can be used for the definition of the international standard for resistance. Today, the (normal) Hall effect finds applications for the characterization of semiconductors and mainly for Hall sensors (produced in numbers of billions/year) for the measurement of magnetic fields, for noncontact (proximity) switches, speed detectors, position, and current sensors. Keywords: Hall effect; electrons and holes; n and p type; charge carrier concentration; Hall mobility; charge carrier scattering; semiconductor properties
author_names: Klaus Ellmer
title: Hall Effect and Conductivity Measurements in Semiconductor Crystals and Thin Films
year: 2012