Query: quantum light source waveguide

Candidate papers:

abstract: Ultrafast electro optical conversion at nanoscale is of fundamental interest for information transfer and optical interconnects. Light emission from a quantum tunnel junction provides an opportunity owing to its unique capability of ultrafast response and small footprint. However, the main challenge to the wide adoption of the tunnel junction is its low emission efficiency caused by the low inelastic electron tunneling proportion and radiation efficiency. In this Letter, an electrically driven silicon light source with its efficiency enhanced by using a nano antenna in a metal insulator semiconductor junction is proposed. Strong plasmon confinement in the nano antenna provides large local density of optical states and bridges the wave vector mismatch between nanoscale volume field confinement and far field radiation. Two orders of magnitude of emission enhancement are achieved over typical planar MIS junctions.
author_names: Bao-Hu Huang

Si-Ping Gao

Yan Liu

Jian Wang

Zhenguo Liu

Yong-xin Guo

Weibing Lu
title: Nano antenna enhanced waveguide integrated light source based on an MIS tunnel junction.
venue: Optics letters
year: 2019

abstract: Industrial and environmental sensing applications require compact, robust and cost effective mid IR light sources for multiline spectroscopy. An essential feature of such source is the ability to generate multiple emission lines on demand, i.e. in a programmable fashion. Building blocks for an integrated programmable light sources operating 2 to 3 mm wavelength band are presented. Our approach is based on mm scale Silicon on Insulator technology and GaSb based quantum well broadband emitter demonstrates. In particular, we focus on presenting state of the art developments of amplified spontaneous emission sources emitting within 2 mm to 2.65 mm quantum wells and present their application as semiconductor optical amplifiers. Progress towards emission at 3 mm using GaInAsSb/AlGa(In)AsSb quantum wells in single transvers mode superluminescent LEDs is also discussed. Moreover, performance merits for various circuit elements prepared using micron scale Silicon oninsulator technology are described; these include waveguides with low propagation and bend losses and echelle gratings for wavelength selection.
author_names: Jukka Viheriala

Matteo Cherchi

Heidi Tuorila

Nouman Zia

Eero S Koivusalo

Samu-Pekka Ojanen

P Karioja

Mircea D Guina
title: Building blocks for mid IR programmable light source based on GaSb based amplified spontaneous emission sources and mm scale Silicon on Insulator waveguide photonics
year: 2019

abstract: We herein propose and verify an ultra small near infrared (NIR) multi wavelength light source using a heterojunction photonic crystal waveguide (PC WG) and quantum dots (QDs) A heterojunction two dimensional PC WG, which consists of multiple PC WGs with sequentially shifted structural parameters, is fabricated on a GaAs slab including InAs QDs. Spontaneous emission (SE) from embedded InAs QDs was enhanced at multiple wavelengths resonating with slow light regions of the PC WG modes. The enhanced SE was propagated and detected through the heterojunction PC WG. These results indicate the feasibility of the proposed light source.
author_names: Sho Uchida

Nobuhiko Ozaki

Teruyuki Nakahama

Hisaya Oda

Naoki Ikeda

Yoshimasa Sugimoto
title: Ultra small near infrared multi wavelength light source using a heterojunction photonic crystal waveguide and self assembled InAs quantum dots
year: 2017

author_names: Ryota Katsumi

Yasutomo Ota

Satoshi Iwamoto

Hidefumi Akiyama

Yasuhiko Arakawa
title: Design of a quantum dot single photon source integrated on a Si waveguide for realizing unidirectional light output
year: 2019

author_names: Uchida Sho

Ozaki Nobuhiko

Oda Hisaya

Ikeda Naoki

Sugimoto Yoshimasa
title: Multi wavelength near infrared light source using heterojunction 2D GaAs photonic crystal waveguide with InAs quantum dots
year: 2017

abstract: We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for experimental characterization of the waveguide. A topological interface state formed at the interface between two topologically distinct VPhCs is used as the waveguide mode. We demonstrate robust propagation for near infrared light emitted from the QDs even under the presence of sharp bends as a consequence of the topological protection of the guided mode. Our work will be of importance for developing robust photonic integrated circuits with small footprints, as well as for exploring active semiconductor topological photonics.
author_names: Takuto Yamaguchi

Yasutomo Ota

Ryota Katsumi

Katsuyuki Watanabe

Satomi Ishida

Alto Osada

Yasuhiko Arakawa

Satoshi Iwamoto Institute of Industrial Science

The University of Tokyo

Institute of Quantum Electronics
title: GaAs valley photonic crystal waveguide with light emitting InAs quantum dots
venue: Applied Physics Express
year: 2019

abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non classical light can be measured with waveguide integrated detectors. However, reproducible single photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non classical light generated on chip is recorded under cryogenic conditions with waveguide integrated superconducting single photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single photon emitters for hybrid quantum photonic devices. Single photons are generated from electrically driven semiconducting single walled carbon nanotubes embedded in a photonic circuit. Pronounced antibunching is observed when photon correlation is measured at cryogenic temperatures.
author_names: Svetlana Khasminskaya

F Pyatkov

Karolina Slowik

Simone Ferrari

Oliver Kahl

Vadim Kovalyuk

Patrik Rath

Andreas Vetter

Frank Dr Hennrich

Manfred M Kappes

Gregory N Goltsman

Alexander Korneev

Carsten Rockstuhl

Ralph Krupke

Wolfram H P Pernice
title: Fully integrated quantum photonic circuit with an electrically driven light source
year: 2016

author_names: Hisaya Oda

Akio Yamanaka

Sho Uchida

Nobuhiko Ozaki

Naoki Ikeda

Yoshimasa Sugimoto
title: Photoluminescence characteristics of multi wavelength near infrared light source using a heterojunction photonic crystal waveguide including quantum dots
year: 2016

abstract: Chip scale frequency combs such as those based on quantum cascade lasers (QCLs) or microresonators are attracting tremendous attention because of their potential to solve key challenges in sensing and metrology. Though nonlinearity and proper dispersion engineering can create a comb light whose lines are perfectly evenly spaced these devices can enter into different states depending on their history, a critical problem that can necessitate slow and manual intervention. Moreover, their large repetition rates are problematic for applications such as dual comb molecular spectroscopy, requiring gapless tuning of the offset. Here, we show that by blending midinfrared QCL combs with microelectromechanical comb drives, one can directly manipulate the dynamics of the comb and identify new physical effects. Not only do the resulting devices remain on a chip scale and are able to stably tune over large frequency ranges, but they can also switch between different comb states at extremely high speeds. We use these devices to probe hysteresis in comb formation and develop a protocol for achieving a particular comb state regardless of its initial state. Published under license by AIP Publishing. https:/doi.org/10.1063/1.5098086 Chip scale frequency combs are expected to have an enormous impact in the area of sensing, as their properties give them unique abilities in spectroscopy and ranging. In particular, quantum cascade laser (QCL) combs operating in the midinfrared and terahertz regions offer the ability to perform sensing in the highly relevant "molecular fingerprint" ranges, where many molecules relative to chemical and biological sensing have fundamental rovibrational transitions. Nonetheless, one challenge associated with these devices is that even with proper dispersion engineering, the spatial hole burning (SHB) mechanism that enables comb formation sometimes allows for multiple types of comb states to form. Although the combs are extremely "reproducible" turning the comb on the same way always leads it to a definite state under usage conditions, they are frequently "multistable," entering into different states based on their history. For example, one may access a particular state if the laser is simply turned on, but a different one by ramping the current up and back down. One could also destroy the comb state with optical feedback. A variety of states arise from the fact that the internal dynamics of QCLs attempt to maximize the average round trip gain of the laser by making use of SHB, which allows more than one mode to lase. However, even in the absence of dispersion, the energy landscape of SHB is highly nonmonotonic, possessing a small number of local maxima with similar round trip gains. These are locally stable, allowing them to be used in applications like dual comb spectroscopy, but perturbations can still cause them to jump between regimes. Unfortunately, accessing and controlling these states are difficult using conventional tuning schemes, such as changing the gain medium's bias and temperature. One way to modify the properties of a QCL comb without contact is to put an object near the facet, changing the intracavity dispersion. In principle, it also changes the mode profile and the SHB pattern of the cavity allowing different states to be accessed although it does so relatively slowly and at the cost of making the device no longer on a chip scale. In order to access these states, here we quasi integrate a microelectromechanical (MEMS) comb drive alongside a QCL frequency comb. The resulting device is still on the chip scale, but by blending it with a mirror whose position can be quickly modulated electrically, we can repeatably probe and access different comb states. In addition, Appl. Phys. Lett. 115, 021105 (2019) doi: 10.1063/1.5098086 115, 021105 1 Published under license by AIP Publishing Applied Physics Letters ARTICLE scitation.org/journal/apl
author_names: David Patrick Burghoff

Ningren Han

Filippos Kapsalidis

Nathan Henry

Mattias Beck

Jacob B Khurgin

Jerome Faist

Q Y Hu
title: Efficient demultiplexed single photon source with a quantum dot coupled to a nanophotonic waveguide
year: 2019

abstract: We report a broadband gain superluminescent diode (SLD) based on self assembled InAsquantum dots(QDs) for application in a high resolution optical coherence tomography(OCT) light source. Four InAsQD layers, with sequentially shifted emission wavelengths achieved by varying the thickness of the In0.2Ga0.8As strain reducing capping layers, were embedded in a conventional p n heterojunction comprising GaAs and AlGaAs layers. A ridge type waveguide with segmented contacts was formed on the grown wafer, and an as cleaved 4 mm long chip (QD SLD) was prepared. The segmented contacts were effective in applying a high injection current density to the QDs and obtaining emission from excited states of the QDs, resulting in an extension of the bandwidth of the electroluminescence spectrum. In addition, gain spectra deduced with the segmented contacts indicated a broadband smooth positive gain region spanning 160 nm. Furthermore, OCTimaging with the fabricated QD SLD was performed, and OCTimages with an axial resolution of ~4 mm in air were obtained. These results demonstrate the effectiveness of the QD SLD with segmented contacts as a high resolution OCT light source.
author_names: Nobuhiko Ozaki

D T D Childs

Jayanta Sarma

Timothy S Roberts

Takuma Yasuda

Hiroshi Shibata

Hirotaka Ohsato

Eiichiro Watanabe

Naoki Ikeda

Yoshimasa Sugimoto

Richard A Hogg
title: Superluminescent diode with a broadband gain based on self assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source
year: 2016