Query: Rayleigh Scattering wafer

Candidate papers:

abstract: Laser light scattering is a powerful tool for its noncontract nature and its convenience to nondestructive examination in the semiconductor industry. Taking the advantage of the scattering matrixes, the models of particulate contaminants on the wafer and subsurface defects are established, respectively. And the bidirectional reflectance distribution functions are derived. The results show that when the Rayleigh particle is on the wafer, the variation of BRDFpp is smooth without gulch for a definite incident angle. However, there is a gulch with the increment of scattering angle and the position of gulch is reduced with the increment of incident angle. When the Rayleigh particle is below the wafer, with an identical incident angle, there is a gulch with the variation of scattering azimuth angle. In addition, BRDFpp becomes larger and larger with the incident angle of p polarization light increment. The conclusions provide theoretical basis for quality evaluation and identify the information of contaminants detected in the semiconductor industry.
author_names: Lei Gong

Zhen S Wu

Ya Qing Li
title: The Three Dimensional Analysis of Light Scattering Characters for Rayleigh Particles On/Below the Wafer
year: 2012

abstract: In this paper, patterns of laser scattering and detection of micro defects have been investigated based on Rayleigh criterion for silicon wafer in solar cell. Also, a new laser scattering mechanism is designed using characteristics of light scattering against silicon wafer surfaces. Its parameters are to be optimally selected to obtain effective and featured patterns of laser scattering. The optimal parametric ranges of laser scattering are determined using the mean intensity of laser scattering. Scattering patterns of micro defects are investigated at the extracted parameter region. Among a lot of pattern features, both maximum connected area and number of connected component in patterns of laser scattering are regarded as the important information for detecting micro defects. Their usefulness is verified in the experiment.
author_names: J S Yean

Gyung-bum Kim
title: Investigation of Laser Scattering Pattern and Defect Detection Based on Rayleigh Criterion for Crystalline Silicon Wafer Used in Solar Cell
year: 2011

abstract: Abstract A fundamental study of laser drilling was performed with computational analysis. High power Q switched diode pumped laser drilling simulations were conducted on N type silicon wafers. In the numerical model, the volume of fluid method was adopted to trace the free surface of the drilled hole with the governing equations including continuity, momentum, and energy equation. The laser beam was considered as a surface heat flux with near Gaussian distribution. The simulation model took into account the physical phenomena, taking place during drilling of the silicon wafer, such as the effects of recoil pressure producing a narrow and deep profile, Fresnel absorption transferring the energy from laser beam to workpiece, multiple reflection raising the absorption of laser energy, and Rayleigh absorption emission scattering absorbing and distributing the entrance laser energy. In particular, a novel model for laser drilling was proposed from the view point of the transmitted, absorbed, emitted, and scattered light.
author_names: Kwangho Park

Suck-joo Na
title: Theoretical investigations on multiple reflection and Rayleigh absorption emission scattering effects in laser drilling
year: 2010

abstract: High refractive index contrast optical microdisk resonators fabricated from silicon on insulator wafers are studied using an external silica fiber taper waveguide as a wafer scale optical probe. Measurements performed in the 1500 nm wavelength band show that these silicon microdisks can support whispering gallery modes with quality factors as high as 5.2x10^5, limited by Rayleigh scattering from fabrication induced surface roughness. Microdisks with radii as small as 2.5 um are studied, with measured quality factors as high as 4.7x10^5 for an optical mode volume of 5.3 (lambda/n)^3.
author_names: Matthew G Borselli

Kartik Srinivasan

Paul E Barclay

Oskar J Painter
title: Rayleigh scattering, mode coupling, and optical loss in silicon microdisks
year: 2004

abstract: In general, the Casimir effects manifest themselves when there are some sort of restrictions for the fluctuation spectrum, i.e. the boundary conditions imposed by a cavity. We will show that the oxide layer of a Si SiO, structure playing the role of such a cavity for virtual photons can be responsible for nonlocal effects in Si SiO, interface nonlinear optical response that stem from the Casimir retarded interaction. In this paper we :show that so called optical Casimir nonlocality of surface quadratic susceptibility stemming from electron electron interaction via virtual photons of the quantized electromagnetic field can give rise to a substantial thickness dependence of the optical second harmonic generation (SHG) intensity from Si SiO, interfaces, for oxide thicknesses in the range of 2 500 nm. The samples used were p type Si(001) wafers on which a high quality thermal oxide with a thickness of 500 nm was grown. The wafer oxidized was etched1 with a buffered NH, solution with in checkerboard configurations to produce samples with identical interface and the oxide thickness ranging in a step like manner from 2 to 500 nm. For the SHG experiments the output of Ti: sapphire laser was used, with wavelength ranging from 700 to 800 nm. To exclude multiple reflections interference the SHG measurements were performed for the p in, p out combination of polarizations, at an angle of incidence on the SO, air interface of 55.5, which is very close to the Brewster angles for the fundamental and !SHG radiation. To distinguish nonlocal Casi.mir contribution from microscopic thicknes:s dependent contributions the SHG oxide thickness dependence was also measured in near index matching fluid (water) Single waveleng,th ellipsometry with a HeNe laser (632.8 nm) was used to measure the oxide layer thicknesses before and after etching and to check the thickness uniformity for each particular .square on the checkerboard samples. Figure 1 shows ,SHG thickness dependence in air and in water. The ratio of these curves presented in Fig. 2 demonstrates selected thickness dependence stemming from Casimir nonlocality. Figure 3 shows spectral dependence of the SHG signal measured at two oxide thicknesses. Summarizing, the SHG intensity from 00
author_names: Andrey A Fedyanin

Oleg A Aktsipetrov

N V Didenko

Eugeni P Lukashev
title: Optical Second harmonic Generation And Hyper rayleigh Scattering In Thin Films Of Bacteriorhodopsin
venue: QELS '97. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference
year: 1997

abstract: Bidirectional ellipsometry has been developed as a technique for distinguishing among various scattering features near surfaces. The polarized angular dependence of out of plane light scattering by the nanoparticles on wafer is calculated and measured according to Rayleigh limit. These calculations and measurements yield angular dependence of bidirectional ellipsometric parameters for out of plane scattering. The experimental data show good agreement with theoretical predictions for different diameter of nanoparticles. The results suggest that improvements for accuracy are possible to perform measurements of scattering features from nanoparticles. The angular dependence and the polarization of light scattered by nanoparticles can be used to determine the size of nanoparticulate contaminants on silicon wafers.
author_names: Cheng-Yang Liu

Wei-en Fu
title: Polarized angular dependence of out of plane light scattering measurements for nanoparticles on wafer
year: 2009

abstract: A laser induced Rayleigh light scattering (RLS) system was used to measure transient gas temperatures in a simulated rapid chemical vapor deposition (RCVD) reactor. The test section geometry was an axisymmetric jet of carrier gas directed down, impinging on a heated water surface. RLS was used to measure instantaneous gas temperature at several locations above the wafer as it was heated from room temperature to 475 K. Gas flow rate and wafer temperature correspond to jet Reynolds number Re{sub i} 60, wafer maximum Grashof number Gr{sub H} 4.4 x 10{sup 6} and a maximum mixed convection parameter Gr{sub H}/Re{sub i}{sup 2} 1200; all conditions typical of impinging jet reactors common in the numerical literature. Uncertainty of RLS transient temperature from a propagated error analysis was }2 4 K. Peak gas temperature fluctuations were large (in the order of 25 to 75 C) Both flow visualization and RLS measurements showed that the flow field was momentum dominated prior to heating initiation, but became unstable by Gr{sub H}/Re{sub i}{sup 2} 5. It then consisted of buoyancy induced plumes and recirculations. Up to the peak wafer temperature, the flow field continued to be highly three dimensional, unsteady, and dominated by buoyancy. RLS measurementsmore are shown to provide information on carrier gas instantaneous temperature and flow field stability, both critical issues in RCVD processing. less
author_names: J F Horton

James E Peterson
title: Rayleigh Light Scattering Measurements of Transient Gas Temperature in a Rapid Chemical Vapor Deposition Reactor
year: 2000

abstract: A theory of light scattering is described for particles and geometric defects on a flat surface which are very small compared with the wavelength. The differential scattering cross section for small objects with an arbitrary shape is calculated to the electric dipole approximation. The image of scatterer through a magnifying lens is also obtained by combining a conventional optical theory. This calculation method is applied to particle, projection, pit and scratch on the silicon wafer, the shape of which is assumed to be rectangular in order to simplify an algebraic expression. The characteristics of light scattering are the followings: (1) The intensity of light scattered by particle is proportional to the 6th power of scatterer size and the scattering of p polarized light is larger than s polarized one. (2) The orientation dependence of light intensity scattered by particle, projection and pit takes a shape of doughnut like a Rayleigh scattering, but the light scattering due to scratch is strong only in the direction perpendicular to the scratch line. (3) The image of scatterers shows a diffraction pattern caused by the aperture of lens.
author_names: Toshihiko Kataoka

Haruyuki Inoue

Katsuyoshi Endo

Yasushi Oshikane

Yuzo Mori

Motohiro Nakano

Katsuo Wada

Hiroshi An
title: Light Scattering by Small particles and Small Defects on the Silicon Wafer Surface. Calculations of Scattering Light Intensity and Optical Image through a Lens.
year: 2000

abstract: This paper describes a system used for detecting the impurity particles on a bare Si wafer surface in a short time, at a wide area, and with a high reliability. The particles are less than 100 nm in diameter. The wafer is illuminated with CW Ar ion laser beam (diameter 100mm, power 600 mW) at an oblique incident angle. The laser beam scattered by the particles is collected and focused at the direction perpendicular to the wafer surface. In order to achieve a uniform illumination in the whole observation area, the laser beam is scanned over the area. The time integrated image of the surface is taken by a long time exposure CCD camera. As a result, 37 nm particles are observed in the image with the signal to noise ratio of 2.4. According to the Rayleigh equation, the noise signal is corresponding to 32 nm particles.
author_names: Haruyuki Inoue

Toshihiko Kataoka

Yasushi Oshikane

Katsuyoshi Endo

Yuzo Mori

Motohiro Nakano

Hiroshi An

S Satomi

Katuo Wada
title: Measurement of Ultra Fine Particles on the Si Wafer Surface Using a Laser Light Scattering Method.
year: 1997

abstract: Surface plasmons supported by metal nanoparticles are perturbed by coupling to a surface that is polarizable. Coupling results in enhancement of near fields and may increase the scattering efficiency of radiative modes. In this study, we investigate the Rayleigh and Raman scattering properties of gold nanoparticles functionalized with cyanine deposited on silicon and quartz wafers and on gold thin films. Dark field scattering images display red shifting of the gold nanoparticle plasmon resonance and doughnut shaped scattering patterns when particles are deposited on silicon or on a gold film. The imaged radiation patterns and individual particle spectra reveal that the polarizable substrates control both the orientation and brightness of the radiative modes. Comparison with simulation indicates that, in a particle surface system with a fixed junction width, plasmon band shifts are controlled quantitatively by the permittivity of the wafer or the film. Surface enhanced resonance Raman scattering (SERRS) spectra and images are collected from cyanine on particles on gold films. SERRS images of the particles on gold films are doughnut shaped as are their Rayleigh images, indicating that the SERRS is controlled by the polarization of plasmons in the antenna nanostructures. Near field enhancement and radiative efficiency of the antenna are sufficient to enable Raman scattering cyanines to function as gap field probes. Through collective interpretation of individual particle Rayleigh spectra and spectral simulations, the geometric basis for small observed variations in the wavelength and intensity of plasmon resonant scattering from individual antenna on the three surfaces is explained.
author_names: Shiuan-Yeh Chen

Jack J Mock

Ryan T Hill

Ashutosh Chilkoti

David R Smith

Anne A Lazarides
title: Gold nanoparticles on polarizable surfaces as Raman scattering antennas.
venue: ACS nano
year: 2010