Query: Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides

Candidate papers:

abstract: With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
author_names: Deep Jariwala

Vinod K Sangwan

Lincoln J Lauhon

Tobin J Marks

Mark C Hersam
title: Emerging device applications for semiconducting two dimensional transition metal dichalcogenides.
venue: ACS nano
year: 2014

abstract: The emerging system of atomically thin materials with only a few atomic layer thickness opens the new research fields of optical science and device applications. The optically generated bound electron hole pairs (excitons and charged excitons) contribute to the novel optical properties in semiconducting atomically thin materials of monolayer transition metal dichalcogenides called as "beyond graphene" We describe our recent studies on novel optical science and application in atomically thin semiconducting transition metal dichalcogenides.
author_names: Kazunaii Matsuda
title: Optical properties and application of atomically thin two dimensional materials
venue: 2017 24th International Workshop on Active Matrix Flatpanel Displays and Devices (AM FPD)
year: 2017

abstract: Recent experimental efforts in investigating low dimensional nanomaterials have spanned significantly beyond carbon nanotube (CNT) and graphene, which are often considered hallmarks of one and two dimensional (1&2D) nanostructures. Emerging layered nanomaterials, such as transition metal dichalcogenides (TMDC) and black phosphorus (P) have enabled new device functions and potential applications thanks to their intriguing material properties unavailable in CNT and graphene. In particular, nanoelectromechanical systems (NEMS) based on these new nanostructures exhibit new and interesting device properties. This paper describes the recent progresses in exploring and engineering atomically thin semiconducting crystals into a new class of two dimensional nanoelectromechanical systems, which hold promises for building novel nanoscale transducers. Exploration of resonant NEMS based on molybdenum disulfide (MoS2) reveals in these new nanoscale systems very broad dynamic range, rich nonlinear dynamics, and outstanding electrical tunability. Further, recent investigations show that black P NEMS offer the unique opportunity for harnessing the strong mechanical anisotropy in this nanocrystal composed of corrugated atomic sheets, demonstrating potential towards new device functions and applications that are unavailable to CNT and graphene based devices and systems.
author_names: Max Zenghui Wang
title: Nanoelectromechanical systems based on low dimensional nanomaterials: Beyond carbon nanotube and graphene nanomechanical resonators a brief review
venue: 2016 IEEE 16th International Conference on Nanotechnology (IEEE NANO)
year: 2016

abstract: Two dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal semiconductor and dielectric semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
author_names: Christopher R Ryder

Joshua D Wood

Spencer A Wells

Mark C Hersam
title: Chemically Tailoring Semiconducting Two Dimensional Transition Metal Dichalcogenides and Black Phosphorus.
venue: ACS nano
year: 2016

abstract: Over the past decade, two dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next generation electronics and offering our insights into future directions of this field.
author_names: Wugang Liao

Siwen Zhao

Fujin Li

Cong Wang

Yanqi Ge

Huide Wang

Shibo Wang

Han Zhang
title: Interface engineering of two dimensional transition metal dichalcogenides towards next generation electronic devices: recent advances and challenges.
venue: Nanoscale horizons
year: 2020

abstract: Abstract Transition metal dichalcogenides (TMDCs) have attracted significant attention for their great potential in nano energy. TMDC layered materials represent a diverse and largely untapped source of 2D systems. High quality TMDC layers with an appropriate size, variable thickness, superior electronic and optical properties can be produced by the exfoliation or vapor phase deposition method. Semiconducting TMDC monolayers have been demonstrated feasible for various energy related applications, where their electronic properties and uniquely high surface areas offer opportunities for various applications such as nano generators, green electronics, electrocatalytic hydrogen generation and energy storage. In this review, we start from the structure, properties and preparation, followed by detailed discussions on the development of TMDC based nano energy applications.
author_names: Henan Li

Yumeng Shi

Ming-Hui Chiu

Lain-Jong Li
title: Emerging energy applications of two dimensional layered transition metal dichalcogenides
year: 2015

abstract: The fast growing earth population and the industrial growth of developing economies in Latin America and Asia have generated increasing air, water, and agricultural pollution in urban regions with consequences to human health. Most industrial sites are in urban regions, thus creating a challenge to ensure air quality and environment monitoring. Despite a growing diagnostic toolkit and a plethora of therapeutic interventions, a key challenge remains in the control of widespread diseases like cancer and diabetes. In the last decades, several semiconducting oxides have been used to detect dangerous or toxic gases. The excellent gas sensing performance of these gas sensor devices has been observed at high temperatures, which forbids their use for the detection of flammable and explosive gases. To overcome the problems such as selectivity, high sensitivity, and operation temperature, atomically thin transition metal dichalcogenides, which are two dimensional (2D) layered materials with large surface areas and tunable bandgaps, have emerged as a candidate for gas sensors. In the present book chapter, the recent advancement in the gas sensors, based on two dimensional (2D) transition metal dichalcogenides, has been comprehensively discussed. In the first section, the recent advances on synthesis process and the properties of these materials have been discussed. The next section depicts the layered transition metal dichalcogenides (TMDs) and their recent advances for application in the field of gas sensors. The challenges and opportunities in gas sensing are discussed, with emphasis on the sensing mechanisms. The third and fourth sections highlight the functionalization of TMDs with noble metals and other metal oxides to investigate the gas sensing properties. Finally, as summary, the prospects of these two dimensional transition metal dichalcogenides have been outlined for the development of highly efficient future generation gas sensors for accelerating the commercialization of the same.
author_names: Nirav Joshi

Maria Luisa Braunger

Flavio Makoto Shimizu

Antonio Riul

Osvaldo N Oliveira
title: Two Dimensional Transition Metal Dichalcogenides for Gas Sensing Applications
year: 2020

abstract: Abstract It is known that only in plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs) In this study, we demonstrate the creation of strong out of plane piezoelectricity in semiconducting 2H MoTe2 flakes by an artificial atomic scale symmetry breaking. The atomic scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out of plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic scale symmetry modulation for out of plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out of plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials.
author_names: Sera Kim

Daehee Seol
title: Atomic scale symmetry breaking for out of plane piezoelectricity in two dimensional transition metal dichalcogenides
venue: Nano Energy
year: 2019

abstract: Raman spectroscopy is one of the most important optical techniques for the study of two dimensional systems, providing fundamental information for the development of applications using these materials in optoelectronics and valleytronics. The emerging area of two dimensional layered materials demands the characterization and understanding of the basic physical properties of the material under study and is indispensable to pave the way for the engineering of devices. In this review we cover the recent development of resonance Raman spectroscopy on transition metal dichalcogenides, discussing the exciton phonon coupling and intervalley double resonance Raman scattering process. A brief discussion of the effect of defects and disorder on the Raman spectra of these materials is also presented. The results of Raman spectroscopy in TMDs are compared to those observed in graphene, showing that this technique also provides physical information about TMDs that were previously reported in graphene systems. We also discuss the possible future perspectives and directions that the field may go to.
author_names: Bruno R Carvalho

Marcos A Pimenta
title: Resonance Raman spectroscopy in semiconducting transition metal dichalcogenides: basic properties and perspectives
year: 2020

abstract: Two dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs) offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well established doping techniques (e.g. ion implantation and diffusion) which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non covalent interactions. Such research endeavours enabled not only the tuning of the charge carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically thin TMDs in the form of substrate supported or solution dispersed nanosheets and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.
author_names: Simone Bertolazzi

Marco Gobbi

Yuda Zhao

Claudia Backes

Paolo Samori
title: Molecular chemistry approaches for tuning the properties of two dimensional transition metal dichalcogenides.
venue: Chemical Society reviews
year: 2018