Query: Introduction to Spintronics

Candidate papers:

abstract: The Early History of Spin Spin The Bohr Planetary Model and Space Quantization The Birth of "Spin" The Stern Gerlach Experiment The Advent of Spintronics The Quantum Mechanics of Spin Pauli Spin Matrices The Pauli Equation and Spinors More on the Pauli Equation Extending the Pauli Equation the Dirac Equation The Time Independent Dirac Equation Appendix The Bloch Sphere The Spinor and the "Qubit" The Bloch Sphere Concept Evolution of a Spinor Spin 1/2 Particle in a Constant Magnetic Field: Larmor Precession Preparing to Derive the Rabi Formula The Rabi Formula The Density Matrix The Density Matrix Concept: Case of a Pure State Properties of the Density Matrix Pure Versus Mixed State Concept of the Bloch Ball Time Evolution of the Density Matrix: Case of Mixed State The Relaxation Times T1 and T2 and the Bloch Equations Spin Orbit Interaction Spin Orbit Interaction in a Solid Magneto Electric Sub Bands in Quantum Confined Structures in the Presence of Spin Orbit Interaction Dispersion Relations of Spin Resolved Magneto Electric Subbands and Eigenspinors in a Two Dimensional Electron Gas in the Presence of Spin Orbit Interaction Dispersion Relations of Spin Resolved Magneto Electric Subbands and Eigenspinors in a One Dimensional Electron Gas in the Presence of Spin Orbit Interaction Magnetic Field Perpendicular to Wire Axis and the Electric Field Causing Rashba Effect Eigenenergies of Spin Resolved Subbands and Eigenspinors in a Quantum Dot in the Presence of Spin Orbit Interaction Why Are the Dispersion Relations Important? The Three Types of Hall Effect Spin Relaxation Spin Relaxation Mechanisms Spin relaxation in a quantum dot Is the Effective Magnetic Field due to Spin Orbit Interaction Proportional to v or k? The Spin Galvanic Effect Exchange Interaction Identical Particles and the Pauli Exclusion Principle Hartree and Hartree Fock Approximations The Role of Exchange in Ferromagnetism The Heisenberg Hamiltonian Spin Transport in Solids The Drift Diffusion Model The Semiclassical Model Concluding Remarks Passive Spintronic Devices and Related Concepts Spin Valve Spin Injection Efficiency Hysteresis in Spin Valve Magnetoresistance Giant Magnetoresistance Spin Accumulation Spin Injection Across a Ferromagnet/Metal Interface Spin Injection in a Ferromagnet/Semiconductor/Ferromagnet Spin Valve Spin Extraction at a Ferromagnetic Contact/Semiconductor Interface Hybrid Spintronics Spin based transistors Spin Field Effect Transistors (SPINFET) Device Performance of SPINFETs Power Dissipation Estimates Other Types of SPINFETs The Importance of the Spin Injection Efficiency Transconductance, Gain, Bandwidth and Isolation Spin Bipolar Junction Transistors (SBJT) GMR based Transistors Concluding Remarks Monolithic Spintronics Monolithic Spintronics Reading and Writing Single Spin Single Spin Logic Energy Dissipation Issues Comparison Between Hybrid and Monolithic Spintronics Concluding Remarks Quantum Computing with Spins The Quantum Inverter Can the NAND Gate Be Switched Without Dissipating Energy? Universal Reversible Gate: The Toffoli Fredkin Gate A Matrix Quantum Gates Qubits Superposition States Quantum Parallelism Universal Quantum Gates A 2 Qubit "Spintronic" Universal Quantum Gate Conclusion A Quantum Mechanics Primer Blackbody Radiation and Quantization of Electromagnetic Energy The Concept of the Photon Wave Particle Duality and the De Broglie Wavelength Postulates of Quantum Mechanics Some Elements of Semiconductor Physics: Particular Applications in Nanostructures The Rayleigh Ritz Variational Procedure The Transfer Matrix Formalism
author_names: Supriyo Bandyopadhyay

Marc Cahay
title: Introduction to spintronics
year: 2008

abstract: Abstract Spin based technologies, in the form of magnetic compasses, have existed for thousands of years. However, it is only in the last century that the concept of spin, as a pure quantum phenomenon, was established, paving the way for new applications exploiting its quantum mechanical properties. This chapter introduces the underlying mechanisms behind spin ordering in magnetic materials, particularly in two dimensional (2D) limit, and reviews historical milestones in the development of "spintronics" and electronic devices utilizing spin. Initially studied for fundamental physical interest, spintronic applications quickly came to prominence following the discovery of giant magnetoresistance and the rediscovery of tunneling magnetoresistance in metallic architectures. The desire to integrate these phenomena with the existing semiconductor based technologies used in the computing industry has inspired intensive study of spintronics within semiconductor materials. Notable developments include the spin field effect transistor and nonlocal device geometries. Following the discovery of novel electronic properties of graphene, there has been a drive to harness similar properties with the addition of spin control in van der Waals or 2D materials, resulting in several families of 2D magnetic materials known today.
author_names: Wenqing Liu

Matthew T Bryan

Yongbing Xu
title: Introduction to spintronics and 2D materials
year: 2020

abstract: Spintronics was born in 1988 with the discovery of GMR provided simultaneously by A. Fert and P. Grunberg and rewarded in 2007 with the Nobel Prize in Physics. This field has since been largely exploited on the market, for example it has been at the base of every hard disk read head. Spintronics field is extremely active and interesting from both a fundamental point of view and for technological applications. Currently, with the aim at new functionalities, there is an increased activity from materials research perspective to understand and develop spintronics devices using materials with new properties like carbon nanotubes, graphene, topological insulators and molecules. This chapter will start with the description of the electronic structure of ferromagnetic metals. The principle of a basic spintronic device will be then presented and finally, it will focus on magnetic tunnel junctions (MTJs) with a more detailed description of the tunneling magnetoresistance (TMR) effect proper to these systems.
author_names: Marta Galbiati
title: Introduction to Spintronics
year: 2016

author_names: Katsuaki Sato
title: Introduction to Spintronics
venue: The Journal of The Institute of Electrical Engineers of Japan
year: 2019

abstract: This textbook is intended for students of engineering, material science, and/or applied physics to study the field of spintronics, otherwise known as electrogmagnetics. Provides the fundamental concepts in quantum mechanics and their applications to spintronic devices. It contains much algebra but it is not heavily theoretical. Students can follow the equations step by step. Each chapter contains problems and references to gain a deeper understanding of the subject matter.
author_names: Junsaku Nitta
title: Introduction to Spintronics (Bandyopadhyay, S. and Cahay, M. [Book Review]
venue: IEEE Nanotechnology Magazine
year: 2008

abstract: Spintronics refers to the study of the role played by electron spin in solid state physics.It is a new emerging field of basic and applied research in physics and engineering where neglected magnetic degree of freedom of an electron,which concerns spin polarization,spin relaxation,and corresponding applications of the electrons.Spintronics device by either adding the spin degree of freedom to conventional charge based electronic devices or using the spin alone has the potential advantages of increased data processing speed and integration densities compared with the conventional semiconductor devices,nonvolatility,and decreased electric power consumption.In this paper,spintronics in combination with spin valve sandwich,magnetic tunneling junction,and semiconductor spin electronics are briefly introduced;furthermore,its current development and applications are reviewed.
author_names: Jia Hong-xuan
title: Brief introduction to spintronics and its development of study
year: 2006

abstract: The past decade has witnessed a significant growth of new types of memory for nonvolatile data storage, as well as experimental devices for more efficient information processing [1] Quite a few of these are based on an intangible property of electrons peculiar to quantum mechanics [2] and, for this reason, such devices are identified as quantum devices[3] Many of these devices confine electrons to quantum scale dimensions, creating what are known as quantum dots. The quantum mechanical property known as electron spin not only is key to the functionality of quantum devices but also underlies permanent magnetism [4] Aligned spins suggest magnetism, whereas non aligned ones indicate that the material is not magnetic. An applied current generating a magnetic field can align or randomize spins, allowing spin based control.Spin can be traced back to the magnetic moment of atoms, since atomic magnetic moments are determined by electronic angular momenta. Accordingly, each individual electron within an atom has an angular momentum associated with its orbital motion, and an intrinsic, or spin angular momentum. The latter plays a major role in today's emerging information processing technologies [5] If, so far, electronic transistors have relied on the presence or absence of current to encode the ones and zeros of digital logic, a new type of transistors, dependent on spin, may do this more efficiently. Magnetic semiconductor quantum dots exploiting spin properties may lead to a new type of circuit based on magnetism instead of current flow.The existence of spin or, more importantly, the statistics associated with it has permitted inventive designs of spin based devices, particularly due to the Pauli exclusion principle that does not allow two electrons in an atom to occupy the same quantum state simultaneously [6] This connection between spin degrees of freedom and electron charge imposed by the Pauli exclusion principle has added a different level of practicality to quantum devices, creating a new branch of electronics termed spintronics (i.e.,spin electronics) As an emerging field, spintronics has already had various degrees of experimental success in proving that information can indeed be encoded, transported, and stored using both electron charge and spin. It is hoped that a successful spintronic transistor will be capable of retaining its logic state in the absence of current while requiring less power to switch a bit. As such, it would reduce the electrical power required by a computer chip by what many believe to be as much as 99%.Most practical challenges faced by spintronics, in particular those transistor type applications, fall broadly into three categories: injection of spin in an "encoder" control of spin transport through a unity usually termed a "spacer" and selective detection of spin in the final element or "decoder" Another issue is temperature dependence and reliability. A practical device is expected to function at room temperature or above. However, many materials are ferromagnetic below certain temperatures. That means they retain their magnetic state in the absence of an applied field but lose that characteristic when they warm up. Therefore, many of these spintronic technologies are still in a research stage, and have yet to be commercialized. These topics will be addressed in this chapter, while particularly emphasizing developments where a significant amount of research seems to be concentrated nowadays.
author_names: Carmen-Gabriela Stefanita
title: Introduction to Spintronics
year: 2012

author_names: Supriyo Datta
title: Nanoelectronic Devices, With an Introduction to Spintronics (Lecture Notes)
year: 2010

author_names: Supriyo Datta

Mark S Lundstrom
title: Nanoelectronic Devices, With an Introduction to Spintronics
year: 2010

abstract: We review the progress and future possibilities in the emerging area of molecular spintronics. We first provide an overview of the different transport regimes in which electronic nanodevices can operate, then briefly overview the important characteristics of molecular magnetic materials that can be useful for application in spintronics and we eventually present several schemes to include such systems into spintronic nanodevices. We hightlight the importance of a chemical approach to the area, and in the last section we showcase some approaches to the creation of hybrids made of carbon nanostructures and molecular magnets, which are gaining increasing attention.
author_names: Shan Jiang

Karin Goss

Christian Cervetti

Lapo Bogani
title: An introduction to molecular spintronics
venue: Science China Chemistry
year: 2012