Query: Gain spectrum and saturation characteristics of two-segment semiconductor optical amplifier

Candidate papers:

abstract: Two segment semiconductor optical amplifier (SOA) is proposed and studied to manipulate the gain and saturation characteristics of SOA; this kind of SOA is separated into two segments that are electrically insulated from each other by two split electrodes; the two segments share the same active region and other internal structure. By changing the injection current density of the front segment or back segment, the saturation output power, bandwidth and gain compression can be easily controlled. Therefore it is convenient for SOA to meet various application requirements in optics communication.
author_names: Lirong Huang

Shenghui Yu

Dexiu Huang
title: Gain spectrum and saturation characteristics of two segment semiconductor optical amplifier
venue: SPIE/OSA/IEEE Asia Communications and Photonics
year: 2008

abstract: Characteristics of small signal gain spectrum and static gain saturation of integrated twin guide semiconductor optical amplifier (ITG SOA) are theoretically investigated and compared with those of SOA. A comprehensive ITG SOA model is proposed to effectively extend the application range of previous models. The model considers the interaction between carrier density and photon density as well as the longitudinal variation of phase match degree induced by input power. Two kinds of ITG SOAs are expected to have different small signal amplification characteristics. The unique gain saturation characteristics of ITG SOA, which have been well explained, show great promise in wavelength conversion: enhanced extinction ratio, reduced input pump power level, and quasi digital response.
author_names: Qingyuan Miao

Dexiu Huang
title: Theoretical study of gain spectrum and static gain saturation characteristics of integrated twin guide semiconductor optical amplifier.
venue: Optics express
year: 2006

abstract: Abstract This paper presents the pulse propagation and gain saturation characteristics for different input optical pulse shapes with different energy levels in semiconductor optical amplifiers (SOAs) A finite difference beam propagation method (FD BPM) is used to solve the modified nonlinear Schrodinger equation (MNLSE) for the simulation of nonlinear optical pulse propagation and gain saturation characteristics in the SOAs. In this MNLSE, the gain spectrum dynamics, gain saturation are taken into account those are depend on the carrier depletion, carrier heating, spectral hole burning, group velocity dispersion, self phase modulation and two photon absorption. From this simulation, we obtained the output waveforms and spectra for different input pulse shapes considering different input energy levels. It has shown that the output pulse shape has changed due to the variation of input parameters, such as input pulse shape, input pulse width, and input pulse energy levels. It also shown clearly that the peak position of the output waveforms are shifted toward the leading edge which is due to the gain saturation of the SOA. We also compared the gain saturation characteristics in the SOA for different input pulse shapes.
author_names: Suchi Barua

Narottam Kumar Das

Sven Erik Nordholm

Mohammad Razaghi
title: Comparison of pulse propagation and gain saturation characteristics among different input pulse shapes in semiconductor optical amplifiers
year: 2016

abstract: This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite difference beam propagation method is used to solve the nonlinear Schrodinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral hole burning, group velocity dispersion, self phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full width at half maximum for different input pulse shapes in the SOA.
author_names: Suchi Barua

Narottam Kumar Das

Sven Erik Nordholm

Mohammad Razaghi
title: Analysis of nonlinear pulse propagation characteristics in semiconductor optical amplifier for different input pulse shapes
year: 2015

abstract: High power Semiconductor Optical Amplifiers (SOA) are often integrated in optical systems such as mode locked lasers, hybrid, or monolithically integrated Master Oscillator Power Amplifiers (MOPA) for applications such as LIDAR systems or free space optical communications. Both these applications require high power and signal modulation, either for data transmission or specific LIDAR adapted signals, which can be provided by either modulating the amplitude of the seed laser or using an external modulator. It is also possible to directly modulate the gain of the SOA by modulating the input current. However, as the input power of the SOA is often high in these configurations (around 1 mW) it operates under the saturation regime. In this article, we present an experimental study of the dynamic characteristics of a two section high power SOA. DC characteristics for different pump current pairs are measured. The S21 parameter is measured, and a model is proposed to understand and predict the dynamic response of the SOA. The impact of the gain saturation with regards to input power on the behavior of the SOA is investigated by pumping the two sections with different current values. Extinction ratio and eye diagrams are measured in three different configurations with the modulation applied on a seed DFB laser, on the input section, then on the output section of the SOA at 1 Gbps, 2.5 Gbps, and 5 Gbps.
author_names: Cecil Pham

Francois Duport

Romain Brenot

J F Paret

Alexandre Garreau

Carmen Gomez

Catherine Fortin

Karim Mekhazni

Frederic van Dijk
title: Modulation of a High Power Semiconductor Optical Amplifier for Free Space Communications
venue: Journal of Lightwave Technology
year: 2020

abstract: The "spectrum slicing" technique, employing incoherent light, has been shown to be a highly practical, cheap and hence very attractive proposal for future all optical networks. In this study, the use of semiconductor optical amplifier gain saturation for intensity noise reduction on incoherent light is further studied in terms of the Relative Intensity Noise (RIN) with a view to obtaining the optimum SOA injection current and input power conditions to achieve the best possible intensity noise reducti on, in conjunction with OSNR, BER and Q factor results. The results reported herein give designers knowledge of the best SOA operating conditions to enhance overall system performance, whilst still obtaining signal gain from the SOA.
author_names: supKanar R Tariq

supDavid I Forsyth

supRiyam A Johni
title: Further Investigation of Intensity Noise Reduction on an Incoherent Light Source using a Gain Saturated Semiconductor Optical Amplifier in a Spectrum sliced Channel at 2.5 Gb\s
year: 2016

abstract: We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 degC. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion less amplification of a single 28 Gbit/s signal and cross talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.
author_names: Ori Eyal

Amnon Willinger

Saddam Banyoudeh

F Schanbel

Vitalii Sichkovskyi

Vissarion Mikhelashvili

Johann Peter Reithmaier

Gadi Eisenstein
title: Static and dynamic characteristics of an InAs/InP quantum dot optical amplifier operating at high temperatures.
venue: Optics express
year: 2017

abstract: We provide the numerical analysis result of the gain saturation characteristics of a semiconductor optical amplifier (SOA) using the tunnel injection structure that we proposed. The tunnel injection SOA has the features of the carrier reservoir and the control of the carrier relaxation speed. The analysis suggested that the tunnel injection SOA improves the output power by 4.9 dB at 100 Gbps PRBS without signal distortion. Such an advantage is based on the mechanism of the filling of carriers during the light amplification that reduces the carriers.
author_names: Mikio Sorimachi

Yasutaka Higa

Takuya Nishinome

Hajime Iwasaki

Tomoyuki Miyamoto
title: Numerical analysis of gain saturation characteristics of semiconductor optical amplifier using tunnel injection structure
venue: 17th Microopics Conference (MOC)
year: 2011

abstract: Recirculating frequency shifter (RFS) loops can be used for electronically programmable, variable spacing multiline spectrum generation, which can benefit the development of fully flexible optical communications and other frequency comb applications. Here, we report on and explain the observation of significant performance variations between chip based gain in semiconductor optical amplifiers (SOA) and fiber based gain in erbium doped fiber amplifiers (EDFA) when used as the gain element in the RFS. Previously, SOAs and EDFAs have been demonstrated in different RFS experiments and studied separately from each other; thus, discussion mainly focused on the noise from amplified spontaneous emission. We show that SOA effects, including four wave mixing, can be measured, which impose limits to the wavelength spacing of the combs, and that this effect is mitigated by increasing the RF drive frequency of the RFS and operating SOA in deeper saturation.
author_names: Xiaoxi Wang

Shayan Mookherjea
title: Performance comparisons between semiconductor and fiber amplifier gain assistance in a recirculating frequency shifter.
venue: Optics letters
year: 2018

abstract: Recently, there is an increasing interest on quantum well (QW) semiconductor optical amplifier in optical communications and optical signal processing applications. This paper addresses the dependence of saturation power on QW structure parameters. Expressions are given to assess this dependency and the results indicate that the saturation power is a decreasing function of number of wells, well thickness, and amplifier length and it is almost independent of barrier thickness.
author_names: Alhuda A Al-mfrji
title: Saturation Gain Characteristics of Quantum Well Semiconductor Optical Amplifier
year: 2012