Query: dustrial applications of plasma-immersion ion implantation in industry

Candidate papers:

abstract: Recent advances in plasma immersion ion implantation PIII are progressing at a rapid pace. PIII was originally envisioned as a conformal ion implantation technology for the surface modification of materials. PIII also offers the advantages of high dose rates, even at low energy, and single wafer implants over large areas. Such advantages are becoming very important for semiconductor manufacturing, particularly for 300 mm wafers and flat panel displays. Applications of PIII in microelectronics introduce new considerations. Conformal implantation is not required, and is unwanted in most semiconductor processes, except for trench doping type applications. In various implant applications, there are often radically different requirements of plasma physics and chemistry. For example, the formation of shallow junctions requires extremely low energy implantation, and a precise implant range may not be necessary or ideal. In this application, PIII becomes the concept of plasma doping, where a wafer under either a DC or pulse bias is directly exposed to the plasma. On the other hand, hydrogen PIII for layer transfer requires extremely precise implant ranges, straggles and sample temperature, but the exact dose may not be critical. In this paper, two important application areas that have attracted much attention and research in the past 2 years, hydrogen PIII and the fabrication of low k materials, are reviewed. Q 2001 Elsevier Science B.V. All rights reserved.
author_names: Paul K Chu

Chung Chan
title: Applications of plasma immersion ion implantation in microelectronics a brief review
year: 2001

abstract: Abstract Plasma immersion ion implantation and deposition (PIII&D) has been used extensively in microelectronics and metallurgical engineering and its future in biomedical engineering and nanotechnology is even brighter with many novel and burgeoning applications. In this invited review, recent work conducted in the Plasma Laboratory at City University of Hong Kong is described. Advances in direct current plasma immersion ion implantation, especially non contact printing and implantation into 3 dimensional components, are discussed. Examples of new applications include fabrication and biological properties of plasma modified titanium based materials and control of the surface degradation rate and other properties of biodegradable polymeric and metallic materials.
author_names: Paul K Chu
title: Progress in direct current plasma immersion ion implantation and recent applications of plasma immersion ion implantation and deposition
year: 2013

abstract: Abstract In the paper, plasma immersion ion implantation (PIII) has been put forward to texture and dope the silicon for solar cells. The influence of PIII parameters on the surface structure has been investigated. The various surface structure of the silicon can be obtained by PIII texturing. Compared with acid texturing solar cells, the average conversion efficiency of PIII texturing solar cells has been improved by 0.7% absolute gain. The characteristics of PN junction formed by PIII doping have been investigated. The conversion efficiency of the solar cell can reach as high as 14.84% using PIII doping.
author_names: Bang-wu Liu
title: The Applications of Plasma Immersion Ion Implantation to Crystalline Silicon Solar Cells
year: 2013

title: The Applications of Plasma Immersion Ion Implantation to Crystalline Silicon Solar Cells
year: 2013

abstract: Plasma immersion ion implantation is a new ion implantation technique for surface modification of materials.The principle and advantages of PIII were analyzed and discussed systematically.Untreated materials were placed directly in a plasma source chamber.It kept in conventional beam ion implantation(CBII) specialty,circumvents the line of sight restriction of conventional beam ion implantation,overcomes the retained did problem and made implantation devices simple and inexpensive.Its applications in surface modification of metallic materials,semiconductor materials and polymer materials were reviewed,the direction of its applications and development were indicated.
author_names: Chen Hui-min
title: Application and Development of Plasma Immersion Ion Implantation in the Material Surface Modification
year: 2008

abstract: Abstract Surface processing of tools and other industrial components was carried out by Plasma Immersion Ion Implantation (PIII) for the improvement of their tribological properties and consequently to reach their prolonged lifetime. Tools made of different types of steels, mainly for the production of rivets, had their lifetime extended for up to 70 times, reducing cost and improving productivity in a mass producing line. Metallic samples used in components for prosthesis (CrNiMo) showed improvements in hardness of up to 250% after nitrogen PIII while non conducting polymer used also for prosthesis component (UHMWPE) was hardened significantly due to the formation of a DLC layer in the treated surface. Tungsten carbide tools were also nitrogen PIII processed which resulted in some improvement in their lifetime but more importantly in excellent surface finishing of the produced Ti parts for dental implants. Steel samples made from H13 alloy showed successful PIII implantation profile (up to depths of 18 mm) and improved hardness of a factor of two was obtained. These results for H13 steel point toward successful applications in molds and other industrial components.
author_names: Mario Ueda

Luiz Angelo Berni

Rito Mijarez Castro
title: Application of plasma immersion ion implantation for improved performance of tools and industrial components
year: 2005

abstract: Thin film was synthesized on GB/T 1438 high speed steel substrates by Plasma Immersion Ion Implantation and Deposition(PIIID).After PIIID treatments,the as deposited samples were evaluated by SEM analysis,the microhardness and lifetime tests.The results show that the microhardness of deposited sample is over 2 000HV and the lifetime of drills prolong nearly 5 times.
author_names: Huang Rui-fen
title: Application of plasma immersion ion implantation and deposition in cutting tool
year: 2010

abstract: By means of X ray photoelectron spectroscopy (XPS) and differential scanning calorimetry (DSC) this study set out to investigate the application of plasma immersion ion implantation (PIII) for the surface modification of ProTaper NiTi rotary instruments. This study was undertaken because the PIII method was perceived to have the potential of developing into a standard surface modification technique that improves clinical quality and outcome. Specimens received nitrogen ion or nitrogen plus argon ion implantation. XPS analyses with and without argon ion etching were obtained for all specimens. In addition, DSC analysis was performed to investigate the phase transformation behavior of the bulk material. Results indicated that the surfaces of NiTi instruments were successfully modified by nitrogen PIII, whereby a light golden TiN layer was yielded. Moreover, the PIII technique did not alter the superelastic character of NiTi instruments because it was carried out at near room temperature. We thus concluded that nitrogen PIII is a promising surface modification technique to improve the surface characteristics of NiTi rotary instruments.
author_names: Uei-Ming Li

Masahiro Iijima

Kazuhiko Endo

William A Brantley

Satish B Alapati

Chun-Pin Lin
title: Application of plasma immersion ion implantation for surface modification of nickel titanium rotary instruments.
venue: Dental materials journal
year: 2007

abstract: Abstract In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd) was proposed to achieve defect free gap filling for copper electroplating (Cu ECP) It was found that a threshold dosage ~5.2x10 18 m 2 of PIII Pd was required to drive Cu ECP and the dependence of Pd dosage on the implantation time was quasi linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity >10 mO cm) while too low a Pd dosage resulted in an insufficient nucleation site for Cu ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap filling capability of Cu ECP and the Cu(111) formation of electroplated copper films.
author_names: S Y Chiu

Ying-Lang Wang

Shih-Chieh Chang

Ming Shiann Feng
title: Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
year: 2005

abstract: Due to its mechanical properties and low density, the Ti 6Al 4V titanium al loy is used in hip prostheses. But the tribological behavior of Ti 6Al 4V sliding against ultra high molecular weight polyethylene involves wear degradations. The wear behavior of (Ti 6Al 4V/UHMWPE) couple can be improved by ion implantation of nitrogen. After a characterization study to find the optimal parameters for classic ion implantation, this study presents an analysis of wear behavior in comparison with chemical composition, microhardness and adhesion work for a new implantation technique, plasma immersion ion implantation.
author_names: Agnes Fabre

Laurent Barrallier

F Torregrosa

Laurent Roux
title: Ion Beam Implantation and Plasma Immersion Ion Implantation. Application on Nitrided Ti 6Al 4V Titanium Alloy
year: 1997