Query: Wide band amplifier

Candidate papers:

abstract: This work clarifies the analysis of the theoretical study of noise and transmission gain characteristics of semiconductor optical amplifiers (SOAs) which are relevant in the novel local area optical communication systems. We investigated the effects of noise on AlGaAs/GaAs SOA transmission performance through the measurement of output power, optical gain, the optical signal to noise ratio, and noise figure. It was observed that noise has a dramatic effect on SOAs' operation transmission efficiency, and the performance of the amplifier structure may be limited. If the drive current and injection power at the SOA can be changed and its active region length modified, then the variation of gain, optical signal to noise ratio, and noise figure at the output of the structure can be obtained.
author_names: Hazem M M El-Hageen

Aadel Alatwi

Ahmed Nabih Zaki Rashed
title: High speed signal processing and wide band optical semiconductor amplifier in the optical communication systems
year: 2020

abstract: The energy resolution of a single photon counting Microwave Kinetic Inductance Detector (MKID) can be degraded by noise coming from the primary low temperature amplifier in the detector's readout system. Until recently, quantum limited amplifiers have been incompatible with these detectors due to dynamic range, power, and bandwidth constraints. However, we show that a kinetic inductance based traveling wave parametric amplifier can be used for this application and reaches the quantum limit. The total system noise for this readout scheme was equal to ~2.1 in units of quanta. For incident photons in the 800 to 1300 nm range, the amplifier increased the average resolving power of the detector from ~6.7 to 9.3 at which point the resolution becomes limited by noise on the pulse height of the signal. Noise measurements suggest that a resolving power of up to 25 is possible if redesigned detectors can remove this additional noise source.
author_names: Nicholas Zobrist

Byeong Ho Eom

Peter K Day

Benjamin A Mazin

S R Meeker

Bruce Bumble

Henry G Leduc

Gregoire Coiffard

Paul Szypryt

Neelay Fruitwala

Isabel Lipartito

Clint Bockstiegel
title: Wide band parametric amplifier readout and resolution of optical microwave kinetic inductance detectors
venue: Applied Physics Letters
year: 2019

abstract: The invention provides a wide band amplifier with frequency compensation, wherein the working frequency range of a circuit of the amplifier can be expanded by means of frequency compensation. The wide band amplifier has a structure of an input/output circuit, wherein the circuit structure comprises a first transconductance amplifying unit, a second transconductance unit equivalent to a load circuit, two frequency compensation resistors embedded to a feedback loop of the second transconductance unit, and two capacitors equivalent to the load introduced by a post stage circuit. The first transconductance amplifying unit has a structure of an input/output circuit, and is connected in series with the second transconductance unit of the feedback circuit structure. Two frequency compensation resistors are respectively matched with a parasitic input resistor at corresponding input end of the second transconductance unit to form a capacitance resistance low pass filter circuit by which a zero point is introduced in a transmission function of the wide band amplifier to expand the frequency working range of the wide band amplifier under the effect of the loop feedback. The wide band amplifier provided by the invention is used as the base amplifier unit applied to a radio frequency simulating front end of a receiver so as to achieve amplifying of an intermediate frequency signal. The wide band amplifier can also be applied to other systems to achieve amplification of a broadband.
title: Wide band amplifier with frequency compensation
year: 2010

abstract: RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non linearity behavior of power amplifiers that leads to inter modulation distortion. This paper presents the design of wide band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class A topology and ATF 511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide band power amplifier. The simulation results showed an input return loss (S11) which less than 10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1) Inter modulation distortion is 56.919dBc which is less than 50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
author_names: Mussa Mabrok

Zahriladha Zakaria

N Saifullah
title: Design of Wide band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion
year: 2018

abstract: Precision dc coupled amplifiers having risetimes of less than a nanosecond have recently been fabricated using the monolithic planar process. The design is based on a simple technique that has a broad range of applications and is characterized by a stage gain bandwidth product essentially equal to that of the transistors, and a very linear transfer characteristic, free from temperature dependence.
author_names: Barrie Gilbert
title: A new wide band amplifier technique
year: 1968

abstract: Abstract This paper presents an Ultra Wide Band (UWB) high linear low noise amplifier. The linearity of Common Gate (CG) structure is improved based on pre distortion technique. An auxiliary transistor is used at the input to sink the nonlinear terms of source current, resulting linearity improvement. Furthermore, an inductor is used in the gate of the main amplifying transistor, which efficiently improves gain, input matching and noise performance at higher frequencies. Detailed mathematical analysis show the effectiveness of both linearity improvement and bandwidth extension techniques. Post layout simulation results of the proposed LNA in TSMC 0.18 um RF CMOS process show a gain of 13.7 dB with 3 dB bandwidth of 0.8 10.4 GHz and minimum noise figure (NF) of 3 dB. Input Third Intercept Point (IIP3) of 10.3 13 dBm is achieved which shows 8 dB improvement compared to conventional common gate structure. The core circuit occupies an area of 0.19 mm 2 including bond pads, while consuming 4 mA from a 1.8 V supply.
author_names: Roya Jafarnejad

Abumoslem Jannesari

Jafar Sobhi
title: A linear ultra wide band low noise amplifier using pre distortion technique
year: 2017

abstract: Abstract In this paper, a differential multi band CMOS low noise amplifier (LNA) operated in a range of 800 1700 MHz, is proposed. In this design, the LNA is integrated wide band interference rejection (input band selection technology) and capacitive cross coupling topologies, which can improve the interference rejection and noise figure preference. Moreover, the conventional notch filter technology only rejected the specified frequency. In this experiment, by using the proposed wide band interference rejection technology, the LNA can reject unwanted signals (out of band signals) and image signals from different frequency. Thus, the LNA has good linearity and interference rejection performance. With the increasing use of frequency spectrum, the proposed technology is even more important. The post simulation results of proposed LNA show that the voltage gain is 13 17.5 dB, the noise figure (NF) is less than 3.4 dB, and the third order intercept point (IIP3) is 7.36 dBm. The LNA consumes 8.96 mW under 1.8 V supply voltage in TSMC 0.18 mm RF CMOS process.
author_names: Jhen-Ji Wang

Duan-Yu Chen

San-Fu Wang

Rongshan Wei
title: A multi band low noise amplifier with wide band interference rejection improvement
year: 2016

abstract: We report a novel hybrid optical amplifier covering S+C+L bands with 105 nm total bandwidth using a silica fiber. The principle of amplification is based on the stimulated radiative transition of Er ions for C band and on the stimulated Raman scattering for S and L band, respectively. In this letter, we analyze the amplification characteristics for two types of active fiber mediums through numerical simulation. One is a silica fiber configured with Er doped cladding and Ge doped core and the other is a medium consisting of Er doped fiber and dispersion compensating fiber. By optimizing parameters such as fiber length and pump power, we newly achieve wide band amplification with 105 nm bandwidth showing a flat gain characteristic over the entire S+C+L bands.
author_names: Hong-seok Seo

Woon Jin Chung

J T Ahn
title: A novel hybrid silica wide band amplifier covering S+C+L bands with 105 nm bandwidth
venue: IEEE Photonics Technology Letters
year: 2005

abstract: Monolithic integration of a wide band amplifier with uniform gain from dc to 1 GHz is described. By choosing an essentially simple circuit both for construction and evaluation it is shown that the collective application of microwave transistor diffusions, double layer interconnections, beam leads, air isolation, and microstriplines on ceramic substrates extends the range of operation to beyond 1 GHZ. Gain values of 12 dB flat within 0.5 dB for a two stage amplifier and nearly 50 dB flat within 1 dB for cascaded amplifiers from low frequencies to 1 GHz are achieved. The direction for further technological improvements is indicated.
author_names: Justin Coughlin

R J H Gelsing

P J W Jochems

H J M van der Laak
title: A monolithic silicon wide band amplifier from DC to 1 GHz
year: 1973

abstract: A 3 mW 800 MHz amplifier with a voltage gain of 10 dB is discussed. The parasitic junction capacitance of a transistor is the major factor limiting the bandwidth particularly for low power amplifiers. In addition to the pole at the input node, the pole at the output node may become dominant in low power amplifiers, which use high speed bipolar transistors. A parasitic capacitance compensation technique to expand the bandwidth in this type of amplifier is discussed. This technique compensates for both capacitances at the input and output nodes and enhances the bandwidth and the gain bandwidth product. The measured data demonstrate that this technique expands the bandwidth to about twice that of a conventional differential amplifier. In addition, circuit simulation predicts that this technique expands the bandwidth by about 40% over a conventional peaking technique. A stable frequency response without any overpeaking or oscillation problem has been achieved by utilizing the parasitic junction capacitances of dummy transistors as the compensation capacitance.
author_names: Tsutomu Wakimoto

Yukio Akazawa
title: A low power wide band amplifier using a new parasitic capacitance compensation technique
year: 1990