Query: 100 GHz Plasmonic Photodetector

Candidate papers:

abstract: Photodetectors compatible with CMOS technology have shown great potential in implementing active silicon photonics circuits, yet current technologies are facing fundamental bandwidth limitations. Here, we propose and experimentally demonstrate for the first time a plasmonic photodetector achieving simultaneously record high bandwidth beyond 100 GHz, an internal quantum efficiency of 36% and low footprint. High speed data reception at 72 Gbit/s is demonstrated. Such superior performance is attributed to the subwavelength confinement of the optical energy in a photoconductive based plasmonic germanium waveguide detector that enables shortest drift paths for photogenerated carriers and a very small resistance capacitance product. In addition, the combination of plasmonic structures with absorbing semiconductors enables efficient and highest speed photodetection. The proposed scheme may pave the way for a cost efficient CMOS compatible and low temperature fabricated photodetector solution for photodetection b.
author_names: Yannick Salamin

Ping Ma

Benedikt Baeuerle

Alexandros Emboras

Yuriy Fedoryshyn

Wolfgang Heni

Bojun Cheng

Arne Josten

Juerg Leuthold
title: 100 GHz Plasmonic Photodetector
year: 2018

abstract: A compact and high speed integrated photoconductive plasmonic photodetector is demonstrated. The proposed photodetector features a bandwidth beyond 100 GHz with an internal quantum efficiency of 36 around 1310 nm.
author_names: Ping Ma

Yannick Salamin

Benedikt Baeuerle

Alexandros Emboras

Yuriy Fedoryshyn

Wolfgang Heni

Bojun Cheng

Arne Josten

Juerg Leuthold
title: 100 GHz Photoconductive Plasmonic Germanium Detector
venue: 2018 Conference on Lasers and Electro Optics (CLEO)
year: 2018

abstract: We demonstrate a novel, ultra compact, waveguide integrated, and plasmonically enhanced graphene photodetector featuring a responsivity of 0.5 A/W and a bandwidth exceeding 110 GHz. We show for the first time 100 GBd data reception with a graphene based device.
author_names: Ping Ma

Yannick Salamin

Benedikt Baeuerle

Arne Josten

Wolfgang Heni

Yuriy Fedoryshyn

Alexandros Emboras

Juerg Leuthold
title: 100 GBd Ultra Compact Plasmonic Graphene Photodetector
venue: 2018 European Conference on Optical Communication (ECOC)
year: 2018

abstract: We investigate a waveguide integrated plasmonic graphene photodetector operating based on the hot carrier photo bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of A/W and high speed on the scale of 100's of GHz that is limited only by the product of the electronic heat capacitance and thermal resistance. We develop a theory of the bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to the bolometric effect, which is shown to significantly surpass the responsivity of the coexisting photoconductive effect, thus convincingly demonstrating the dominance of the bolometric effect. Based on the theory, we propose a novel detector configuration based on a hybrid waveguide that allows for efficient absorption in graphene over a short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high speed communication systems.
author_names: Jacek Gosciniak

Jacob B Khurgin
title: On Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector
venue: ACS omega
year: 2020

abstract: Here we propose an original waveguide integrated plasmonic Schottky photodetector that takes full advantage of a thin metal stripe embedded entirely into a semiconductor. The photodetector is based on the long range dielectric loaded surface plasmon polariton waveguide with a metal stripe deposited on top of a semiconductor rib and covered by another semiconductor. As the metal stripe is entirely surrounded by semiconductor, all hot electrons with appropriate k vectors can participate in transitions that highly enhances the electron transfer, and consequently the internal quantum efficiency. In addition, a high coupling efficiency from the photonic waveguide to the photodetector is simulated exceeding 90 which enhances the external quantum efficiency. Calculations show that a responsivity exceeding 0.5 A/W can be achieved at telecom wavelength of 1550 nm and the bandwidth can exceed 100 GHz. Furthermore, it is shown that titanium nitride is a perfect material for the photodetector as it provides a low Fermi energy and long electron mean free path that enhance the hot electron transfer to the semiconductor. In addition, it shows reasonable metallic behavior and CMOS compatibility. Measurements showed that the Schottky barrier height between titanium nitride and p doped silicon reaches 0.69 0.70 eV that matches the optimum signal to noise ratio operation calculated at 0.697 eV.
author_names: Jacek Gosciniak

Fatih Bilge Atar

Brian Corbett

Mahmoud S Rasras
title: Plasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS compatible titanium nitride
venue: Scientific Reports
year: 2019

abstract: We investigate a waveguide integrated plasmonic graphene photodetector operating based on the hot carrier either photo thermoelectric or photo bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of A/W and high speed on the scale of 100's of GHz. The proposed detector configuration is based on a hybrid waveguide that allows for efficient absorption in graphene over a short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high speed communication systems.
author_names: Jacek Gosciniak

Jacob B Khurgin
title: On chip ultrafast plasmonic graphene photodetectors
year: 2020

abstract: A fast silicon graphene hybrid plasmonic waveguide photodetectors beyond 1.55 \mu}m is proposed and realized by introducing an ultra thin wide silicon on insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal graphene metal sandwiched electrodes are introduced to reduce the metal graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 \mu}m, the measured 3dB bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 \mu}m with a 3dB bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 \mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of 0.3 V for an optical power of 0.16 mW, while the measured 3dB bandwidth is over 40 GHz (limited by the test setup) and the 3 dB bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon graphene photodetectors at 1.55 \mu}m.
author_names: Jingshu Guo

Jiang Li

Chaoyue Liu

Yanlong Yin

Wenhui Wang

Zhenhua Ni

Zhilei Fu

Hui Yu

Yang Xu

Yaocheng Shi

Yungui Ma

Shiming Gao

Limin Tong

Daoxin Dai
title: High performance silicon graphene hybrid plasmonic waveguide photodetectors beyond 1.55 \mu}m
year: 2019

abstract: Abstract In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by optoelectronics. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Graphene material is a new candidate using in optoelectronics' devices such as photodetector. The responsivity of Graphene photodetectors depends critically on the elevated temperature of the electronic subsystem upon photoexcitation. We performed in this study a multi layer Graphene/InGaAs /InAlAs/InAs Photodetector PIN simulation with Atlas under Silvaco tcad Tools using Graphene and high electronmobility III V materials. Our devices exhibit 100 GHz bandwidth with 40 ps transient reponse, 5.8 mA of photocurrent, high responsivity with value of (2.7 x 10 7 A/w) and a suitable efficiency e of 95% with reasonable rejection ration of Iilumination/Idark of 2 order of magnitude.
author_names: M Khaouani

Hichem Bencherif

Zakarya Kourdi

Lakhdar Dehimi

A Hamdoune

Mohamed Amir Abdi
title: An ultrafast multi layer Graphene/InGaAs/InAlAs/InAs P I N photodetector with 100 GHz bandwidth
year: 2020

abstract: We designed and fabricated a zero bias operational uni travelling carrier photodetector for high outputs, and achieved a photocurrent saturation of 7 mA and an output saturation of 1 dBm at 110 GHz at 0 V. Furthermore, we observed that the output performance at 0 V could be improved by reducing the thickness of the InP layer to 70% of that in the original design. The results of the simulation showed that the photocurrent and RF output power were nearly doubled in the 100 GHz range. The device design and the experimental results have been discussed herein.
author_names: Toshimasa Umezawa

Atsushi Matsumoto

Atsushi Kanno

Naokatsu Yamamoto

Tetsuya Kawanishi
title: Investigation of 100 GHz Output Power Performance in Uni travelling Carrier Photodetector under Zero bias Condition
venue: 2019 PhotonIcs Electromagnetics Research Symposium Spring (PIERS Spring)
year: 2019

abstract: As bit rates of optical interconnects increase, a large amount of complicated signal conditioning is needed to compensate for the insufficient bandwidth of current modulators. In this paper, we evaluate the reduced equalization requirements of high bandwidth plasmonic modulators in short reach transmission experiments. It is shown that transmission of 100 Gbit/s non return to zero (NRZ) and 112 Gbit/s pulse amplitude modulation 4 over 1 km and 2 km distance is possible without any receiver equalization. At higher bit rates, such as 120 Gbit/s NRZ, data transmission is demonstrated over 500 m with reduced receiver equalization requirements. Transmission up to 200 Gbit/s over 1 km is also shown with more complex receiver equalization. The reduced complexity of the receiver digital signal processing is attributed to a flat frequency response of at least 108 GHz of the plasmonic modulators. All single wavelength transmissions have been performed at 1540 nm in standard single mode fiber.
author_names: Benedikt Baeuerle

Wolfgang Heni

Claudia Hoessbacher

Yuriy Fedoryshyn

Arne Josten

Christian Haffner

Tatsuhiko Watanabe

Christopher Uhl

Horst Hettrich

Delwin L Elder

Larry R Dalton

Michael Moller

Juerg Leuthold
title: Reduced Equalization Needs of 100 GHz Bandwidth Plasmonic Modulators
venue: Journal of Lightwave Technology
year: 2019