Query: Recent advances in memory technology

Candidate papers:

abstract: In the last five years we have seen remarkable advances in the density of commodity memory devices, both NAND flash and DRAM. NAND flash has now migrated to the 1x nm era, and DRAM is has reached the 2x nm node. To achieve this level of integration the manufacturers have had to adopt both new materials and processes, and also were the first users of advanced lithographic techniques such as immersion lithography and double patterning. Chipworks, as a supplier of competitive intelligence to the semiconductor and electronics industries, monitors the evolution of chip processes as they come into commercial production. Chipworks has obtained parts from the leading edge manufacturers, and performed structural analyses to examine the features and manufacturing processes of the devices. The paper reviews some of the different flash and DRAM memory structures produced recently, and looks at the details of the memory cells.
author_names: Dick James
title: Recent advances in memory technology
venue: ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference
year: 2013

abstract: Computing in memory (CiM) is a popular design alternative to overcome the von Neumann bottleneck and improve the performance of artificial intelligence computing applications. Monolithic three dimensional (M3D) technology is a promising solution to extend Moore's law through the development of CiM for data intensive applications. In this article, we first discuss the motivation and challenges associated with two dimensional CiM designs, and then examine the possibilities presented by emerging M3D technologies. Finally, we review recent advances and trends in the implementation of CiM using M3D technology.
author_names: Zhixiao Zhang

Xin Si

Srivatsa Rangachar Srinivasa

Akshay Krishna Ramanathan

Meng-Fan Chang
title: Recent Advances in Compute in Memory Support for SRAM Using Monolithic 3 D Integration
venue: IEEE Micro
year: 2019

abstract: Emerging Non Volatile Memories (NVM) have shown enormous potential for wide applications within the memory hierarchy to replace and/or assist conventional CMOS technology. In addition to key advantages of having low leakage power and low footprint, these technologies possess unique characteristics that can be leveraged to develop secure hardware and compute capable memories. We review these unique properties of NVMs in implementing security primitives. We also present potential attacks against NVMs and their countermeasures.
author_names: Karthikeyan Nagarajan

Asmit De

Sina Sayyah Ensan

Abdullah Ash-Saki

Mohammad Nasim Imtiaz Khan

Swaroop Ghosh
title: Recent Advances in Emerging Technology based Security Primitives, Attacks and Mitigation
venue: 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS)
year: 2020

abstract: Summary Organic fluorescent molecules have broad applications in modern technology, such as in security systems, chemosensors, bioprobes, field effect transistors, memory devices, organic light emitting diodes, etc. The transition metal catalyzed C H bond functionalization approach represents a distinct, facile, and atom efficient tactic for the construction of organic fluorescent molecules, which are often difficult to prepare using typical synthetic methods. In this review, four types of C H bond functionalization reactions for the preparation of fluorescent materials are discussed: (1) transition metal catalyzed C H/C X cross coupling reactions; (2) transition metal catalyzed C H/C H cross coupling reactions; (3) transition metal catalyzed C H addition and/or annulation reactions; and (4) transition metal catalyzed C H/C M or C H/Het H bond functionalization. The objective of this review is to characterize the current state of the art in using transition metal catalyzed C H functionalization to build fluorescent molecules as well as their application in electroluminescent materials, mechanofluorochromic materials, labels, sensors for bioimaging, etc.
author_names: Bijin Li

Ahmed Ali

Haibo Ge
title: Recent Advances in Using Transition Metal Catalyzed C H Functionalization to Build Fluorescent Materials
year: 2020

abstract: Molecular imprinting technology (MIT) concerns formation of selective sites in a polymer matrix with the memory of a template. Recently, molecularly imprinted polymers (MIPs) have aroused extensive attention and been widely applied in many fields, such as solid phase extraction, chemical sensors and artificial antibodies owing to their desired selectivity, physical robustness, thermal stability, as well as low cost and easy preparation. With the rapid development of MIT as a research hotspot, it faces a number of challenges, involving biological macromolecule imprinting, heterogeneous binding sites, template leakage, incompatibility with aqueous media, low binding capacity and slow mass transfer, which restricts its applications in various aspects. This critical review briefly reviews the current status of MIT, particular emphasis on significant progresses of novel imprinting methods, some challenges and effective strategies for MIT, and highlighted applications of MIPs. Finally, some significant attempts in further developing MIT are also proposed (236 references)
author_names: Lingxin Chen

Shoufang Xu

Jinhua Li
title: Recent advances in molecular imprinting technology: current status, challenges and highlighted applications.
venue: Chemical Society reviews
year: 2011

abstract: Recent advances in emerging technologies such as monolithic 3D Integration (M3D IC) and emerging non volatile memory (eNVM) have enabled to embed logic operations in memory. This alleviates the "memory wall" challenges stemming from the time and power expended on migrating data in conventional Von Neumann computing paradigms. We propose a M3D SRAM dot product engine for compute in SRAM support used in applications such as matrix multiplication and artificial neural networks. In addition, we propose a novel computing in RRAM based memory architecture to efficiently solve the computation intensity of sparse dot products. Specifically, the index assessment of sparse matrix vector multiplication used in support vector machines (SVM) At maximum throughput, our proposed RRAM architecture achieves 11.3x speed up when compared against a near memory accelerator.
author_names: Nicholas Jao

Srivatsa Srivinasa

Akshay Krishna Ramanathan

Minhwan Kim

Jack Sampson

Narayanan Vijaykrishnan
title: Technology Assisted Computing In Memory Design for Matrix Multiplication Workloads
venue: 2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
year: 2019

abstract: Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in memory computing systems with greatly enhanced computation capability. This review focuses on the recent advances in resistive materials and devices. We first describe the electric field induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field engineering strategy that is used to optimize the device structure and the memory performance. The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated. By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal organic framework and organic inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated. Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.
author_names: Gang Liu

Yu Chen

Shuang Gao

Bin Zhang

Run-Wei Li

Xiaodong Zhuang
title: Recent Advances in Resistive Switching Materials and Devices: From Memories to Memristors
year: 2018

abstract: Assistive technology for cognition (ATC) is technology to extend mental capacity. The majority of people reading this article will use technology to support their everyday cognitive function; by setting appointment reminders on their phone to support prospective memory, using a SatNav to support navigational skills or an search engine as an alternative to storing information in long term memory. If technology can support the cognition of ordinary individuals, potentially it can have an even greater role in assisting the cognition of people who through illness, injury or developmental disorders live with cognitive impairment. In these cases technology can act as a cognitive prosthetic or orthotic supporting or replacing lost or impaired cognitive function (Cole, Dehdashti, Petti, Angert, 1994)
author_names: Catherine Best

Brian O'Neill

Alex Gillespie
title: Recent Advances in Microprompting Technology
year: 2016

abstract: Stretchable field effect transistors (s FETs) an indispensable component in stretchable electronics, have emerged as a noteworthy technology in academia and industry due to their broad application prospects, especially in wearable electronics, implantable electronics and skin like electronics. Currently, significant efforts have been devoted to fabricating high performance s FETs, and remarkable advances in their material, structural, and processing techniques and applications have been achieved. Here, we summarize the recent progress in the fabrication of high performance s FETs achieved by developing advanced stretchable channel materials, structural designs and processing techniques. Moreover, the applications of s FETs in stretchable electronics, such as stretchable sensors, stretchable memory transistors and stretchable artificial neurologically devices, are discussed. Beyond discussing recent key work in this field, the current challenges and prospective directions of s FETs in stretchable electronics are also discussed. This review presents a detailed overview of the recent progress in s FET fabrication and applications, which provides a guideline for the further development of s FETs with high stretchability and electrical performance in the near future.
author_names: Yaqian Liu

Qizhen Chen

Zhichao Rao
title: Recent advances in stretchable field effect transistors
year: 2021

abstract: Abstract Water evaporation induced electricity generation technology has become an extremely interesting issue recently for supplying both freshwater and electricity. This review concentrates on advances in the recent development of water evaporation induced electricity generation systems for possible application in the Internet of Things, resistive switching memory, devices collecting big data. Additionally, its application in powering some small electronic devices, energy storage, electrochemical deposition and electrochemical cells are also specifically clarified in this work. We divided water evaporation induced electricity generation systems into three classifications, including tandem devices, hybrid devices, and self powered generators. The mechanism and application of each electricity generation system are also carefully discussed. Lastly, future opportunities and difficulties to develop water evaporation induced electricity generation systems are also mentioned.
author_names: Van-Duong Dao

Ngoc Hung Vu

Hai-Linh Thi Dang

Sining Yun
title: Recent advances and challenges for water evaporation induced electricity toward applications
venue: Nano Energy
year: 2021