Query: high side level shift circuit

title: High Voltage Level Shift Circuit
abstract: supply voltage system where low supply gates may feed into high supply gates energy savings for benchmark circuits in comparison when level converters are not allowed. of a level shifter circuit having a structure to reduce fall and rise. input voltage levels prohibit the use of direct gate drive circuits for high side signal are linked by a level shift circuit that must tolerate the high voltage differ. Level shifter is an interfacing circuit which can interface low core voltage to high inputoutput voltage. It can be either low voltage level or high voltage level.

title: Level shift circuit, miniature power supply and high side switch
abstract: To obtain a level shift circuit, in which integration is possible in control circuit and drive circuit and in switching element and the same power IC, by comprising two constant voltage means and constant current circuits, and RS flip flop.  In the case of a double forward type DC DC converter, a level shift circuit 5 is constituted from pulse generation circuit 14, constant current circuits 15a, 15b, constant voltage circuits 16a, 16b and NAND circuits 17a, 17b of a cross couple constituted RS flip flop. Then, a power MOSFET 7b, transformer 9 and power MOSFET 7a are connected with a main voltage source 1 so as to constitute a closed circuit; and diodes 8a and 8b are connected between the low voltage side of the main voltage source 1 and high voltage side of the transformer 9 and further between the low voltage side of the transformer 9 and high voltage side of the main voltage source 1, respectively. Therefore, the level shift circuit 5 can be made into a single chip IC together with control circuit 4 and drive circuits 6a, 6b.

title: A High Voltage Dynamic Level Shifter with Current Mirror and Augmented Cross Coupling Structure for High Side NMOS Gate Driver
abstract: A high voltage dynamic level shifter with current mirror and augmented cross coupling structure for high side NMOS power switch is presented. The proposed circuit includes isolated low voltage transistors, medium voltage transistors and high voltage transistors to shift the low voltage control signal from low voltage domain (VDD~4V) to high voltage power domain (VIN 80V) The circuit has characteristics of low power, high speed and reliability enhanced by adopting current mirror and augmented cross coupling structure. The circuit is designed and simulated with 0.35um high voltage BCD process. Simulation results demonstrate that the rising and falling delay time of proposed level shifter are 4.5ns and 5.5ns respectively, and the turn on and turn off propagation delay time of a high voltage NMOS gate driver with the proposed level shifter are 25ns and 30ns respectively. the circuit can be used to drive high side NMOS power switch with maximum voltage reaching 80V.

title: Reverse level shift circuit
abstract: The present invention relates to a reverse level shift circuit. Stable to changes in the high side reference voltage of the level shift reverse operation. Using the first and second high side driving signal reference potential as a reference potential generated by a transistor (HVPMOS1, HVPMOS2) is driven. The output signal voltage of the transistor (HVPMOS1, HVPMOS2) is converted to the low side, generating a first and second main signal and the first and second masking signal. Mask signal generating circuit (6) to change the high potential side reference signal to generate a third shielding mask than the first and second high signal sensitivity. Masking logic circuit (7) of the first mask signal and the second masking signal to generate a fourth AND operation of the mask signal, the fourth signal and the third shield mask signal for both the first and second main signal shielding. SR flip flop circuit (10) generates an output signal based on the first and second main signal to be blocked.

title: Gate Drive Circuit for H Bridge High Side Power MOSFETs with High Voltage Level Shifter
abstract: A gate drive circuit with level shifter was proposed for H bridge high side power MOSFETs.In the level shifter,pulse down mode was used to implement high voltage level shift,which,compared with conventional square wave down mode,effectively reduced power of the circuit.Structure of the circuit and its operational principle were analyzed,and a gate drive circuit for H bridge high side power MOSFETs was designed.The circuit was simulated with Spectres based on 5 mm BCD process,and layout was made with Virtuoso.Test results showed that the proposed circuit could increase gate voltage of the high side MOSFET,and properly turn on and off the high side power MOSFET.

title: The level shift circuit
abstract: Provides a low noise based on the possibility of erroneous operation, and to the low power operation of the level shift circuit. Level shift circuit (1) includes: respectively with the input signal Sin and the inverted signal of the same phase as the first and second input gate 2 MOSFET (12a, 12b) end end of the shift level of the power connector, the other first and second resistive elements (13a, 13b) respectively, each end of the first and second drain of the MOSFET is connected to the shift high side electrical output signal level of the power supplied to the level shift ends after output voltage; a pair of differential input terminals are connected to each comparator of the first and second drain 2 MOSFET (14) and a rising signal level of the input signal and the fall are controlled via the synchronization first resistive element the current amount of current flowing through the first current of the first current of the MOSFET and a second current flowing through the MOSFET of the second resistive element via the second control circuit (16)

title: Level shift circuit
abstract: Provided is a level shift circuit, whereby it becomes possible to prevent the occurrence of the delay of an on operation caused by a circuit for suppressing a dv/dt noise in a high side switching element that constitutes a half bridge. The circuit comprises: a series circuit composed of a resistor (LSR1) that is connected to a position between a high voltage side power supply voltage of a secondary voltage system and a low voltage side power supply voltage of a primary voltage system and a switch element (HVN1) a series circuit composed of a resistor (LSR2) that is connected to a position between the high voltage side power supply voltage of the secondary voltage system and the low voltage side power supply voltage of the primary voltage system and a switch element (HVN2) a latch malfunctioning protection circuit (22) which operates in the secondary voltage system and inputs a voltage of a connection point (P1) located between the resistor (LSR1) and the switch element (HVN1) and the voltage of a connection point (P2) located between the resistor (LSR2)and the switch element (HVN2) a latch circuit (23) which operates in the secondary voltage system and to which the output from the latch malfunctioning protection circuit (22) is input; a switch element (PM1a) which is connected to the resistor (LSR1) in parallel; a switch element (PM2a) which is connected to the resistor (LSR2) in parallel; and an OR circuit (OR1) which operates in the secondary voltage system and to which the voltages of the connection points (P1) and (P2) are input to control the on/off operation of the switch elements (PM1a) and (PM2a)

title: High performance level shift circuit with low input voltage
abstract: A voltage potential conversion circuit is between the PMOS transistors and two NMOS transistors VN side or two side PMOS transistor is added to the VP NMOS transistor, and connected to the gate of these transistors are added to two output terminal. With this arrangement, the voltage level converting circuit may be small input voltage into an output voltage is larger than in the case where almost no DC current, and without the use of additional band voltage reference circuit.

title: High side gate driver circuit of an anti noise
abstract: An anti noise of the high side gate driver circuit comprising a high voltage level shift circuit, RS latch and a driver, two high voltage level shifting circuit pressure pulse signal converting an input signal to output two high voltage pulse, two high pressure pulse signal, respectively, after the process proceeds to the RS latch, the output of the RS latch to the drive, the drive control switch outputs a drive signal of the external power transistor. The present invention is of high voltage level shifting circuit is improved, the improved high voltage level shifting circuit comprises two separate identical portions, each comprises two separate portions LDMOS tube, a delay unit, a homogeneous satisfied regulator, a capacitor, a resistor and a medium voltage PMOS transistor. The present invention can eliminate the d V dt noise and differential mode noise interference, and can at the same time eliminating the noise does not affect the normal signal transmission, but also increased the negative voltage VS allowed.

title: Anti noise jamming high side drive circuit
abstract: The invention discloses an anti noise jamming high side drive circuit, which comprises a floating power supply, a double pulse generation circuit, a high voltage level shift circuit, an undervolatge detection circuit, an RS trigger circuit, a gate drive circuit and a noise cancellation circuit, wherein the noise cancellation circuit consists of a common mode voltage detection circuit, a common mode noise cancellation circuit and an offset noise cancellation circuit which are sequentially connected; the two input ends of the noise cancellation circuit are connected with the two output ends of the high voltage level shift circuit; the noise cancellation circuit receives high voltage equidirectional control signals from the high voltage level shift circuit, cancels floating noises in the high voltage equidirectional control signals and outputs setting signals and resetting signals; and the setting signal output end of the noise cancellation circuit is connected with the XS input end of the RS trigger circuit, while a resetting signal output end is connected with the XR input end of the RS trigger circuit. The anti noise jamming high side drive circuit cancels the floating noises generated by the floating of the high side power supply, has low power consumption and simple circuit structure, saves the area of a chip and is conveniently popularized and used.