Query: flexible resistive memory

title: Effect of Aluminum Doping on Performance of HfOx Based Flexible Resistive Memory Devices
abstract: The Al doped HfO<sub><italic>x</italic>/sub> based resistive memory devices have been fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) flexible substrate at room temperature. X ray photoelectron spectroscopy is used to extract the different doping percentage of Al which allows optimizing the switching performance. It improves the cycle to cycle and cell to cell uniformity of switching parameters by tuning the oxygen vacancies in HfO<sub><italic>x</italic>/sub> layers. The 7.5% Al doped HfO<sub><italic>x</italic>/sub> based flexible resistive memory device shows excellent switching characteristics such as resistance ratio <inline formula> <tex math notation="LaTeX" 10^{3} /tex math>/inline formula> and retention <inline formula> <tex math notation="LaTeX"\sim 10^{4} /tex math>/inline formula> s) There is no degradation of memory window under the mechanical strain with bending radius ranging from 25 to 5 mm. The temperature dependent resistive switching characteristics have also been studied. There is sufficient memory window <inline formula> <tex math notation="LaTeX" 10^{2} /tex math>/inline formula> till <inline formula> <tex math notation="LaTeX"\sim 10^{4} /tex math>/inline formula> s at elevated temperature. The <inline formula> <tex math notation="LaTeX"{I} /tex math>/inline formula> <inline formula> <tex math notation="LaTeX"{V} /tex math>/inline formula> curve fitting shows the ohmic (hopping) conduction in low resistance state (LRS) and the trap controlled space charge limited conduction (SCLC) in high resistance state (HRS) supported by Arrhenius plot.

title: Homogeneous 3D Vertical Integration of Parylene C Based Organic Flexible Resistive Memory on Standard CMOS Platform

title: Biodegradable and Flexible Resistive Memory for Transient Electronics
abstract: Physically transient electronics have attracted increasing attention recently due to their potential as the basis for building "green" electronics and biomedical devices. In the development of transient devices for biomedical applications, however, the dilemma between the strictly required biodegradability and device performance has brought great difficulties to the material selection. In this paper, we introduced silk fibroin as dielectric layer to fabricate biodegradable resistive memory devices. Comprising a W/silk fibroin/Mg sandwich structure, stable bipolar resistive switching behavior with good repeatability and device variability was obtained, surpassing most organic resistive memory and comparable to inorganic resistive memory. The carrier transport evolution process was carefully examined to reveal the mechanism behind resistive switching. A switching model regarding the formation of metallic conductive filament was proposed by considering both the nature of silk fibroin dielectric layer and the.

title: Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications
abstract: Hexagonal boron nitride (hBN) which is a 2D layered dielectric material, sometimes referred as "white graphene" due to its structural similarity with graphene, has attracted much attention due to its fascinating physical properties. Here, for the first time the use of chemical vapor deposition grown hBN films to fabricate ultrathin (3 nm) flexible hBN based resistive switching memory device is reported, and the switching mechanism through conductive atomic force microscopy and ex situ transmission electron microscopy is studied. The hBN based resistive memory exhibits reproducible switching endurance, long retention time, and the capability to operate under extreme bending conditions. Contrary to the conventional electrochemical metallization theory, the conductive filament is found to commence its growth from the anode to cathode. This work provides an important step for broadening and deepening the understanding on the switching mechanism in filament based resistive memories and propels the 2D material application in the resistive memory in future computing systems.

title: Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate
abstract: Recently, resistive memory devices based on flexible plastic substrates have attracted increasing attention due to their potential deployment in wearable or implantable circuits and systems. Most resistive memories on plastic substrates cannot grow well or function properly at high temperatures. In this study, in order to mitigate the challenges of high temperature and flexibility, mica is selected as the substrate for resistive memories. Specifically, resistive memories with a tunneling junction structure of Pd/BTO/LSMO are fabricated on a 10 mm thick mica substrate. This innovation not only achieves a bending radius of 15 mm, but also exhibits excellent electrical characteristics even after bending 104 times. In addition to stable switching characteristics and multi value storage demonstration at room temperature, excellent retention characteristics and robust state conversions between HRS and LRS are observed at high temperatures up to 200 degC. These measurement results indicate that the excellent flexibility and thermal stability of mica based transparent resistive memories make the proposed device very promising in wearable or implantable electronic systems.Recently, resistive memory devices based on flexible plastic substrates have attracted increasing attention due to their potential deployment in wearable or implantable circuits and systems. Most resistive memories on plastic substrates cannot grow well or function properly at high temperatures. In this study, in order to mitigate the challenges of high temperature and flexibility, mica is selected as the substrate for resistive memories. Specifically, resistive memories with a tunneling junction structure of Pd/BTO/LSMO are fabricated on a 10 mm thick mica substrate. This innovation not only achieves a bending radius of 15 mm, but also exhibits excellent electrical characteristics even after bending 104 times. In addition to stable switching characteristics and multi value storage demonstration at room temperature, excellent retention characteristics and robust state conversions between HRS and LRS are observed at high temperatures up to 200 degC. These measurement results indicate that the excellent flexi.

title: High performance flexible resistive memory devices based on Al2O3:GeOx composite
abstract: In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio ~104) and endurance >500 cycles) GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next generation electronics device.

title: Fully inkjet printed flexible resistive memory
abstract: Resistively switching memory cells (ReRAM) are strong contenders for next generation non volatile random access memories. In this paper, we present ReRAM cells on flexible substrates consisting of Ag/spin on glass/PEDOT:PSS (poly(3,4 ethylenedioxythiophene) polystyrene sulfonate) The complete cell is fabricated using a standard inkjet printer without additional process steps. Investigations on the spin on glass insulating layer showed that low sintering temperatures are sufficient for good switching behavior, providing compatibility with various foils. The cells feature low switching voltages, low write currents, and a high ratio between high and low resistance state of 104. Combined with excellent switching characteristics under bending conditions, these results pave the way for low power and low cost memory devices for future applications in flexible electronics.

title: Flexible Resistive Memory: Na Cation Assisted Exfoliation of MX2 (M Mo, W; X S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer Nanocomposite Memory Applications (Small 2/2018)

title: Flexible NiO nanocrystal based resistive memory device fabricated by low temperature solution process
abstract: In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 degC by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low temperature solution process shows potential for next generation flexible electronics.

title: ZrN Based Flexible Resistive Switching Memory
abstract: In this letter, ZrN based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room temperature fabrication process, the device is suitable for low temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (107) a rapid speed (45 ns) and stable retention (104 s) at 100degC without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.