Study of noise and spectroscopic performance of DEPMOSFET matrix prototypes for XEUS
The current generation of DEPMOSFET-based Active Pixel Sensor (APS) matrix devices has been developed to cope with the challenging requirements of the XEUS Wide Field Imager. The devices turned out to be a promising new imager concept for a variety of X-ray imaging applications. The devices combine excellent energy resolution, high-speed readout and low power consumption with the attractive feature of random accessibility of pixels. Sensor prototypes, built for row-wise readout, with 64 × 64 pixels with a size of 75 × 75 μ m 2 each have been produced at the MPI semiconductor laboratory in Munich, and their performance has been studied in detail. A spectroscopic resolution of 128 eV has been measured, the readout noise is as low as 3.5 e - ENC. Here, measurements of the dependence of readout noise and spectroscopic resolution on the device temperature are presented.

title: DMAPS: a fully depleted monolithic active pixel sensor—analog performance characterization
abstract: Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10–15 μm) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal of these conventional MAPS is small (≈1000 e−) and the radiation tolerance is limited. In this paper, the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume is presented. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a prototype chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (≈50 μm) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes and pixel electronics have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels are presented.

title: Performance of a DEPFET prototype module for the ILC vertex detector
abstract: For the detection of secondary vertices of long lived bottom and charm quarks at the proposed International Linear Collider (ILC) a DEPFET pixel detector is one of the favored technology options. DEPFET pixel sensors, in which the amplifying transistor structure is contained in the pixel cell itself on a fully depleted bulk, are unique devices in terms of their large signal and low noise capability and their obtainable spatial resolution with very thin detectors. DEPFET pixel prototype modules with close to ILC specifications have been tested in the laboratory and, for the first time, in a 6 GeV electron test beam. The different noise sources have been calculated and compared with the measured value of ENC/spl ap/225 e/sup -/ for the entire readout chain.

title: A serial powering scheme for the ATLAS pixel detector at sLHC
abstract: Powering concepts, such as serial powering and DC-DC conversion, are in development for the silicon trackers at sLHC to achieve an efficient power distribution with a minimum volume of cables. This paper will describe the serial powering scheme developed for the upgraded ATLAS pixel detector, with focus on the scheme architecture and on the main components involved: the Shunt-LDO regulator and the protection scheme. Issues connected to system aspects will be discussed, and the advantages in terms of material reduction provided by the proposed serial powering scheme will be presented.

title: Test results of the Data Handling Processor for the DEPFET Pixel Vertex Detector
abstract: In the new Belle II detector, which is currently under construction at the SuperKEKB accelerator, a two layer pixel detector will be introduced to improve the vertex reconstruction in a ultra high luminosity environment. The pixel detector will be produced using the DEPFET technology. A new ASIC (Data Handling Processor or DHP) designed to steer the readout process, pre-process and compress the raw data has been developed. The DHP will be directly bump bonded to the balcony of the all-silicon DEPFET module. The current chip prototype has been produced in CMOS 90 nm. Its test results, including the data processing quality, the signal integrity of the gigabit transmission lines will be presented here. For the final chip, which will be produced using CMOS 65 nm, single event upset (SEU) cross sections were measured. An additional chip, containing memory blocks to be tested, was submitted and produced using this technology.

title: Search for nonpointing and delayed photons in the diphoton and missing transverse momentum final state in 8 TeV pp collisions at the LHC using the ATLAS detector
abstract: A search has been performed, using the full 20.3 fb(-1) data sample of 8 TeV proton-proton collisions collected in 2012 with the ATLAS detector at the LHC, for photons originating from a displaced vertex due to the decay of a neutral long-lived particle into a photon and an invisible particle. The analysis investigates the diphoton plus missing transverse momentum final state, and is therefore most sensitive to pair production of long-lived particles. The analysis technique exploits the capabilities of the ATLAS electromagnetic calorimeter to make precise measurements of the flight direction, as well as the time of flight, of photons. No excess is observed over the Standard Model predictions for background. Exclusion limits are set within the context of gauge mediated supersymmetry breaking models, with the lightest neutralino being the next-to-lightest supersymmetric particle and decaying into a photon and gravitino with a lifetime in the range from 250 ps to about 100 ns.

title: Production asymmetry of Ds from 600 GeV//c Sigma- and pi- beam

title: Polarization of Σ+ hyperons produced by 800 GeV/c protons on Cu and Be
abstract: We show that  hyperons produced by 800 GeV/c protons on targets of Be and Cu have significant polarizations (15-20%). These polarizations persist at values of p{sub t}{approx_equal}2 GeV/c and a wide range of x{sub F}. The polarizations from the Cu target are consistently less than from Be. The average ratio of the {sigma}{sup +} polarization from Cu to that from Be is 0.68{+-}0.08.

title: Multiplicity separation with the reciprocal effect counter in the SELEX experiment