Nuclear dependence of charm production
Using data taken by SELEX during the 1996–1997 fixed target run at Fermilab, we study the production of charmed hadrons on copper and carbon targets with Σ−, p, π−, and π+ beams. Parametrizing the dependence of the inclusive production cross section on the atomic number A as Aα, we determine α for D+, D0, Ds+, D+(2010), Λc+, and their respective anti-particles, as a function of their transverse momentum pt and scaled longitudinal momentum xF. Within our statistics there is no dependence of α on xF for any charm species for the interval 0.1<xF<1.0. The average value of α for charm production by pion beams is αmeson=0.850±0.028. This is somewhat larger than the corresponding average αbaryon=0.755±0.016 for charm production by baryon beams (Σ−, p).

title: First observation of the doubly charmed baryon Xi(+)(cc).
abstract: We observe a signal for the doubly charmed baryon Xi(+)(cc) in the charged decay mode Xi(+)(cc)-->Lambda(+)(c)K-pi(+) in data from SELEX, the charm hadroproduction experiment at Fermilab. We observe an excess of 15.9 events over an expected background of 6.1+/-0.5 events, a statistical significance of 6.3sigma. The observed mass of this state is 3519+/-1 MeV/c(2). The Gaussian mass width of this state is 3 MeV/c(2), consistent with resolution; its lifetime is less than 33 fs at 90% confidence.

title: First test beam results on DEPFET pixels for the ILC
abstract: By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET sensor combines radiation detection and amplification in each pixel, resulting in very low noise and high spatial resolution. This makes DEPFET sensors a favorable technology for the vertex detector at the planned International Linear Collider (ILC). A prototype system with fast steering chips, a current-based readout chip and a 64 × 128 pixels DEPFET matrix has been built and was operated successfully in the DESY test beam. First results of the studies on two different DEPFET design options are presented in this paper.

title: Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology
abstract: Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

title: A serial powering scheme for the ATLAS pixel detector at sLHC
abstract: Powering concepts, such as serial powering and DC-DC conversion, are in development for the silicon trackers at sLHC to achieve an efficient power distribution with a minimum volume of cables. This paper will describe the serial powering scheme developed for the upgraded ATLAS pixel detector, with focus on the scheme architecture and on the main components involved: the Shunt-LDO regulator and the protection scheme. Issues connected to system aspects will be discussed, and the advantages in terms of material reduction provided by the proposed serial powering scheme will be presented.