Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon

Oxygen precipitation in silicon has been associated with a weak room temperature sub-bandgap luminescence emission at around 1600 nm. We show that the additional presence of iron impurities enhances this emission by an order of magnitude and results in a red shift of the peak luminescence by approximately 45 nm. We not only observe an increase in the luminescence emission with iron contamination level but also with the density and size of the oxide precipitates. Moreover, we provide evidence that the sub-bandgap luminescence emission increases proportionally with the concentration of iron segregated to oxide precipitates after high temperature (>700 °C) annealing and thus allows evaluation of the gettering efficiency of oxygen-containing precipitates. Annealing of iron-contaminated samples at low temperatures (550 °C) results in a considerable reduction in the interstitial iron concentration without changing the sub-bandgap luminescence, indicating that the sink to which iron diffuses depends upon temperature.

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