Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0.48In0.52As (AlInAs) resulting in quantum dot like energetic traps for charge carriers, which are confirmed via cross sectional scanning tunnelling microscopy (XSTM) measurements and 6 band k*p simulations. We observe quantum dot (QD) like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2) values as low as g cw (0) 0.05+0.17 0.05 for continuous wave (cw) excitation and g pulsed, corr. 0.24 0.02 for pulsed excitation.  1984, (1984)  Kimble, "Deterministic generation of single photons from one atom trapped in a cavity,"  1992 1994 (2004) 3. F. Diedrich and H. Walther, "Nonclassical radiation of a single stored ion,"  (1987) 4. R. Brouri, A. Beveratos, J. P. Poizat, and P. Grangier, "Photon antibunching in the fluorescence of individual color centers in diamond," Opt. Lett. 25, 1294 1296 (2000) 5. C. Kurtsiefer, S. Mayer, P. Zarda, and H. Weinfurter, "Stable solid state source of single photons,"  (2000) 6. T. Basche, W. E. Moerner, M. Orrit, and H. Talon, "Photon antibunching in the fluorescence of a single dye molecule trapped in a solid,"  1516 1519 (1992) 7. M. Ikezawa, Y. Sakuma, and Y. Masumoto, "Single photon emission from individual nitrogen pairs in GaP,"  (2007) 8. S. Castelletto, B. Johnson, V. Ivady, N. Stavrias, T. Umeda, A. Gali, and T. Ohshima, "A silicon carbide roomtemperature single photon source,"  Mater. 13, 151 156 (2014) 9. Y. M. He, G. Clark, J. R. Schaibley, Y. He, C. Ming Cheng, Y. J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C. Y. Lu, and J. W. Pan, "Single quantum emitters in monolayer semiconductors,"  (2015) 10. P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos Gomez, H. S. J. van der Zant, S. M. de Vasconcellos, and R. Bratschitsch, "Single photon emission from localized excitons in an atomically thin semiconductor," Optica 2, 347 352 (2015) Vol. 24, No. 20 3 Oct 2016 OPTICS EXPRESS 23198  2016; revised 24 Aug 2016; accepted 27 Aug 2016; Optically active quantum dots in monolayer WSe2,"  (2015) 12. C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, "Voltage controlled quantum light from an atomically thin semiconductor,"  (2015) 13. M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J. Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, "Single photon emitters in exfoliated WSe2 structures,"  (2015) 14. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. Zhang, E. Hu, and A. Imamoglu, "A quantum dot single photon turnstile device,"  2282 2285 (2000) 15. C. Santori, M. Pelton, G. Solomon, Y. Dale, and Y. Yamamoto, "Triggered single photons from a quantum dot,"  (2001) 16. J. M. Gerard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry Mieg, "Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,"  (1998) 17. S. Reitzenstein and A. Forchel, "Quantum dot micropillars,"  (2010) 18. S. Unsleber, Y. M. He, S. Gerhardt, S. Maier, C. Y. Lu, J. W. Pan, N. Gregersen, M. Kamp, C. Schneider, and S. Hofling, "Highly indistinguishable on demand resonance fluorescence photons from a deterministic quantum dot micropillar device with 74% extraction efficiency," Opt. Express 24, 8539 8546 (2016) 19. J. Claudon, J. Bleuse, N. S. Malik, M. Bazin, P. Jaffrennou, N. Gregersen, C. Sauvan, P. Lalanne, and J. M. Gerard, "A highly efficient single photon source based on a quantum dot in a photonic nanowire,"  (2010) 20. M. E. Reimer, G. Bulgarini, N. Akopian, M. Hocevar, M. B. Bavinck, M. A. Verheijen, E. P. Bakkers, L. P. Kouwenhoven, and V. Zwiller, "Bright single photon sources in bottom up tailored nanowires,"  (2012) 21. M. Arcari, I. Sollner, A. Javadi, S. Lindskov Hansen, S. Mahmoodian,  Stobbe, and P. Lodahl, "Near unity coupling efficiency of a quantum emitter to a photonic crystal waveguide,"  (2014) 22. E. Waks, K. Inoue, C. Santori, D. Fattal, J. Vuckovic, G. S. Solomon, and Y. Yamamoto, "Quantum cryptography with a photon turnstile,"  (2002) 23. T. Heindel, C. A. Kessler, M. Rau, C. Schneider, M. Furst, F. Hargart, W. M. Schulz, M. Eichfelder, R. Rossbach, S. Nauerth, M. Lermer, H. Weier, M. Jetter, M. Kamp, S. Reitzenstein, S. Hofling, P. Michler, H. Weinfurter, and A. Forchel, "Quantum key distribution using quantum dot single photon emitting diodes in the red and near infrared spectral range,"  (2012) 24. M. Rau, T. Heindel, S. Unsleber, T. Braun, J. Fischer, S. Frick, S. Nauerth, C. Schneider, G. Vest, S. Reitzenstein, M. Kamp, A. Forchel, S. Hofling, and H. Weinfurter, "Free space quantum key distribution over 500 meters using electrically driven quantum dot single photon sources a proof of principle experiment,"  (2014) 25. S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, and P. Vogl, "Nextnano: general purpose 3 D simulations,"  2137 2142 (2007) 26. C. D. Yerino, P. J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D. L. Huffaker, S. Hofling, M. Kamp, and M. L. Lee, "Strain driven growth of GaAs (111) quantum dots with low fine structure splitting,"  251901 (2014) 27. Q. Wu, G. D. Feke, R. D. Grober, and L. P. Ghislain, "Realization of numerical aperture 2.0 using a gallium phosphide solid immersion lens,"  (1999) 28. D. Bimberg, M. Sondergeld, and E. Grobe, "Thermal dissociation of excitons bounds to neutral acceptors in high purity GaAs,"  (1971) 29. P. Offermans, P. M. Koenraad,  Roy, and P. A. Maksym, "Atomic scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs,"  (2005) 30. A. Lenz, R. Timm, H. Eisele, C. Hennig, S. Becker, R. Sellin, U. Pohl, D. Bimberg, and M. Dahne, "Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix,"  (2002) 31. A. Giddings, J. Keizer, M. Hara, G. Hamhuis, H. Yuasa, H. Fukuzawa, and P. Koenraad, "Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross sectional scanning tunneling microscopy,"  (2011) 32. A. Wijnheijmer, J. Garleff, K. Teichmann, M. Wenderoth, S. Loth, and P. Koenraad, "Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy,"  (2011) 33. S. Ates, S. M. Ulrich, S. Reitzenstein, A. Loffler, A. Forchel, and P. Michler, "Post selected indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity,"  (2009) 34. D. Richter, R. Hafenbrak, K. D. Jons, W. M. Schulz, M. Eichfelder, M. Heldmaier, R. Rossbach, M. Jetter, and P. Michler, "Low density movpe grown InGaAs QDs exhibiting ultra narrow single exciton linewidths," Nanotechnology 21, 125606 (2010) 35. M. Bayer and A. Forchel, "Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self assembled quantum dots,"  (2002) 36. A. V. Uskov, I. Magnusdottir, B. Tromborg, J. Mo/rk, and R. Lang, "Line broadening caused by coulomb carriercarrier correlations and dynamics of carrier capture and emission in quantum dots,"