3D Flash Memories
Venue: Microelectron. Reliab.

3D FlashMemories byMicheloni, Rino presents good technical insights of main fundamentals and product reliability of latest 3D flash memories in storage semiconductor industry, suitable for both industry and academic practitioners. The author provides insights on the broad values and key technologies and evolutions included working principles, device architectures, fabrication techniques and practical implementations of 3D flash memories chips in this book. The overall trends of 3D flash memories from 3D stacked NAND technology, 3D floating gate technology till most recent 3D charge trapped technology are covered in this book. The author also highlights the reliability failure mechanisms and advanced architectures for 3D NAND Flash memories with vertical channel of 3D flashmemories.While the book is formatted as a technical reference book, complete with 3D stacked NAND product theories and end of chapter summary, it contains enough real world references to highlight the book's practicality and applications. The book's second section of the book presents a good introduction on 3D multi chip integration and packaging technology for 3D flashmemories and system level considerations on design of 3D NAND flashmemories. The author reviewed the overview of the NAND business and memory industry transformation in Chapter 1. The main overview of NAND technology transformations, NAND usagemodel in semiconductor storage industry, enterprise solid state drives, NAND endurance and its performance and cost of NAND flash are covered in this Chapter. The reliability of 3D NAND flash memories in terms endurance, data retention, erratic bits and over programming and architecture dependent reliability issues such as endurance degradation, threshold voltage (Vt) shift during sensing, vertical charge loss through top and bottom oxide and Vt shift induced by neighboring cells are explained in Chapter 2. Basic concepts of 3D stackedNANDflashmemories for example overview of floating gate cell, basic operation of NAND, 3D stacked architecture and biasing of 3D stacked layers in NAND covered in Chapter 3. Chapter 4 covers the introduction to 3D charge trap NAND flashmemories and its basic building blocks of various 3DNAND included BICS, P BICS, VRAT, Z VRAT, VSAT, A VSAT, TCAT and V NANDmemories. Basic operations and product architectures of 3D floating gate NAND flash memories are discussed in Chapter 5. This chapter provides us the different combinations and comparisons of conventional floating gate architecture with respect to extended sidewall control gate flash cell, dual control gate with surrounding floating gate flash cell, separated sidewall control gate flash cell and sidewall control pillar flash cell. It discusses the different building blocks and its application in 3D memories. It also reveals the future of 3D floating gate flashmemories and circuits floor planning in semiconductor memory. The remainder of this book builds on the advanced architecture of 3D NAND flash memories with vertical channel specifically focuses on 3D VG Type NAND flash memories, RRAM cross point arrays and 3D multi chip integration and