natgillin/translations-raw huggingface dataset:
Controlled motion of arcing erodes the cathode surface creating a highly ionized plasma.
Nadzorovano gibanje loka razjeda površino katode in ustvarja visokoionizirano plazmo.
The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber.
Anoda je lahko stožec ali konus, pritrjen na obrobju katode, z izolatorjem, ali pa komora.
Substrate biasing is used for non line-of-sight deposition.
Polarizacija podlage se uporablja za nanašanje zunaj vidne linije.
This definition does not include random cathodic arc deposition with non-biased substrates.
NAPOTILO: Ta opredelitev ne zajema nanašanja z naključnim katodnim lokom z nepolariziranimi podlagami.
Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionize the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma.
Ionsko nanašanje je posebna oblika splošnega postopka TE-PVD, v kateri se za ioniziranje nanosnega materiala izkorišča vir plazme ali vir ionov, in negativni polarizirani material se uporablja za podlage zaradi lažje ekstrakcije nanosnih materialov iz plazme.
The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.
Uporaba reaktivnih elementov, evaporizacije trdnih delcev v komori, v kateri poteka postopek, in uporaba monitorjev za meritve optičnih značilnosti in debeline prevlek med potekom postopka so običajne modifikacije postopka.
Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of:
Utrjevanje je površinska modifikacija ali površinska plast, kjer je substrat potopljen v mešanico prahov, ki sestoji iz:
The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);
nanosnih kovinskih prahov (navadno aluminij, krom, silicij ali njihova kombinacija);
An activator (normally a halide salt); and
aktivatorja (navadno soli halidov); in
An inert powder, most frequently alumina.
inertnega prahu, najpogosteje aluminijev boksit.
The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1,102 °C) for sufficient time to deposit the coating.
Substrat in mešanica prahov sta v retorti, ogreti na temperaturo med 1030 K (757 °C) in 1375 K (1102 °C), za čas, ki zadošča za nanos prevleke.
Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed.
Pršenje s plazmo je postopek nanašanja prevleke na površino, pri katerem razpršilka oblikuje in krmili plazmo, praškaste ali nitkaste nanosne materiale, jih tali in vrtinči proti podlagi, na kateri se oblikuje integralno povezan nanos.
Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying.
Pršenje s plazmo je možno prek plazme z nizkim ali visokim tlakom pršenja.
1 Low pressure means less than ambient atmospheric pressure.
NAPOTILO 1: Nizkotlačna plazma pomeni plazmo tlaka, nižjega od atmosferskega.
2 High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa.
NAPOTILO 2: Plazma velike hitrosti se nanaša na hitrosti plina iz dulca prek 750 m/s, računano pri 293 K (20 °C) in pri 0,1 MPa.
Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.
Redko nanašanje je postopek nanašanja prevleke zaradi spreminjanja površine ali postopek nanašanja prevleke na površino, pri katerem se kovinski ali keramični prah z organskim vezivom suspendira v tekočino in se nato nanese na podlago bodisi z razprševanjem, kopeljo ali barvanjem, čemur sledi sušenje v pečici in toplotna obdelava, potrebna za to, da se želeni nanos obdrži.
Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material).
Nanašanje z brizganjem je nanašanje prevleke na površino, ki temelji na principu visokega podtlaka in prehoda delcev, kjer so pozitivni ioni pospešeni z elektronskim poljem v smeri sustrata.
The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate.
Kinetična energija ionov, ki se zaletijo v substrat, je tako velika, da se atomi na površini nanosnega materiala sprostijo in nanesejo na primerno nameščeno podlago.
1 The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials.
NAPOTILO 1: Tabela se nanaša samo na triodno, magnetronsko ali reakcijsko nanašanje z brizganjem, ki se uporablja za zvišanje sprejemljivosti nanosa in nivoja, in na povečano nanašanje z brizganjem z uporabo radijskih frekvenc (RF), ki se uporablja za omogočanje uparjevanja nekovinskih nanosnih materialov.
2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition.
NAPOTILO 2: Za sprožitev nanašanja se lahko uporabljajo nizkoenergijski ionski žarki (manj kakor 5 keV).
Ion Implantation is a surface modification coating process in which the element to be alloyed is ionized, accelerated through a potential gradient and implanted into the surface region of the substrate.
Ionska implantacija je postopek nanašanja prevleke zaradi spreminjanja površine, pri katerem se element, predviden za zlitino, ionizira, pospešuje skozi potencialni padec in vsadi v površino podlage.
This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.
Ta postopek vključuje postopek, pri katerem potekata istočasno ionska implantacija in fizično plinska metoda nanašanja s pomočjo elektronskega žarka ali visokega podtlaka.
CATEGORY 3
SKUPINA 3
Note 1: The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10. or 3A001.a.12., which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment.
Opomba 1: Nadzorni status opreme, naprav in komponent, opisanih v točkah 3A001 ali 3A002 (razen tistih iz točk od 3A001.a.3 do 3A001.a.10 ali iz točke 3A001.a.12), ki so posebej izdelane za drugo opremo in imajo iste funkcionalne značilnosti kakor druga oprema, je določen z nadzornim statusom druge opreme.
Note 2: The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9. or 3A001.a.12. which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment.
Opomba 2: Nadzorni status integriranih vezij iz točk od 3A001.a.3 do 3A001.a.9 ali iz točke 3A001.a.12, ki so nespremenljivo programirana ali izdelana za specifično funkcijo za drugo opremo, je določen z nadzornim statusom druge opreme.
N.B.: When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001.a.3. to 3A001.a.9. and 3A001.a.12.
NAPOTILO: Če proizvajalec ali uporabnik ne more določiti nadzornega statusa druge opreme, je nadzorni status integriranih vezij določen v točkah od 3A001.a.3 do 3A001.a.9 in v točki 3A001.a.12.
If the integrated circuit is a silicon-based "microcomputer microcircuit" or microcontroller microcircuit described in 3A001.a.3. having an operand (data) word length of 8 bit or less, the control status of the integrated circuit is determined in 3A001.a.3.
Če je integrirano vezje "mikroračunalniško mikrovezje" na podlagi silicija ali mikrokrmilniško mikrovezje, opisano v točki 3A001.a.3, in če je dolžina njegovega podatka za obdelavo 8 bitov ali manj, je nadzorni status integriranega vezja določen v točki 3A001.a.3.
Electronic components, as follows:
Elektronske komponente:
General purpose integrated circuits, as follows:
integrirana vezja za splošno rabo:
Note 1: The control status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a.
Opomba 1: Nadzorni status rezin (izdelanih ali neizdelanih) z določeno funkcijo se določa v skladu s parametri iz točke 3A001.a.
Note 2: Integrated circuits include the following types:
Opomba 2: Integrirana vezja vključujejo naslednje tipe:
"Monolithic integrated circuits";
"monolitna integrirana vezja";
"Hybrid integrated circuits";
"hibridna integrirana vezja";
"Multichip integrated circuits";
"veččipna integrirana vezja";
"Film type integrated circuits", including silicon-on-sapphire integrated circuits;
"plastna integrirana vezja", vključno z integriranimi vezji tipa silicij na safirju;
"Optical integrated circuits".
"optična integrirana vezja".
Integrated circuits, designed or rated as radiation hardened to withstand any of the following:
integrirana vezja, izdelana ali označena kot odporna proti sevanju, ki lahko prenesejo:
A total dose of 5 × 103 Gy (silicon) or higher;
skupno dozo 5 × 103 Gy (silicij) ali več;
A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or
določeno stalno dozo 5 × 106 Gy (silicij)/s ali več; ali
A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials;
tok (integrirani tok) nevtronov (ekvivalent 1 MeV) 5 × 1013 n/cm2 ali več za silicij ali ekvivalentne vrednosti za druge materiale;
Note: 3A001.a.1.c. does not apply to Metal Insulator Semiconductors (MIS).
Opomba: 3A001.a.1.c. se ne uporablja za strukture kovina-izolator-polprevodnik (MIS)
"Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following:
"mikroprocesorska mikrovezja", "mikroračunalniška mikrovezja", mikrokrmilniška mikrovezja, shranjevalna integrirana vezja, izdelana iz sestavljenih polprevodnikov, analogno-digitalni pretvorniki, digitalno-analogni pretvorniki, elektro-optična ali "optična integrirana vezja", izdelana za "obdelavo signalov", logična vezja s programirljivim poljem, nevronska mrežna integrirana vezja, integrirana vezja po meri, katerih funkcija je neznana ali če je neznan nadzorni status opreme, v kateri bodo ta vezja uporabljena, procesorji s hitro Fourierevo transformacijo (FFT), električni izbrisljivi in programirljivi bralni spomin (EPROM), bliskovni spomini ali statični pomnilnik za branje in pisanje (SRAM), ki imajo katero koli od naslednjih značilnosti:
Rated for operation at an ambient temperature above 398 K (125 °C);
so prirejeni za delovanje pri temperaturi okolja nad 398 K (125 oC);
Rated for operation at an ambient temperature below 218 K (– 55 °C); or
so prirejeni za delovanje pri temperaturi okolja pod 218 K (– 55 °C); ali
Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) et 398 K (125 °C);
so prirejeni za delovanje pri temperaturi okolja od 218 K (– 55 °C) do 398 K (125 °C).
Note: 3A001.a.2. does not apply to integrated circuits for civil automobiles or railway train applications.
Opomba: Točka 3A001.a.2. se ne uporablja za integrirana vezja za civilne avtomobile ali za naprave za železniške vlake.
"Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, having any of the following characteristics:
"mikroprocesorska mikrovezja", "mikroračunalniška mikrovezja" in mikrokrmilniška mikrovezja, ki imajo katero koli od naslednjih značilnosti:
Note: 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors.
Opomba: Točka 3A001.a.3 vključuje procesorje digitalnih signalov, procesorje digitalnih nizov in digitalne koprocesorje.
Not used;
se ne uporablja;
Manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; or
izdelani so iz sestavljenega polprevodnika in delujejo na urni frekvenci, večji od 40 MHz; ali
More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel "microprocessor microcircuits" with a transfer rate exceeding 150 Mbyte/s;
več kakor eno podatkovno ali ukazno vodilo ali zaporedna komunikacijska vrata za zunanjo medsebojno povezavo med paralelnimi "mikroprocesorskimi mikrovezji" s stopnjo prenosa več kakor 150 Mbajtov/s;
Storage integrated circuits manufactured from a compound semiconductor;
shranjevalna integrirana vezja, izdelana iz sestavljenega polprevodnika;
Analogue-to-digital and digital-to-analogue converter integrated circuits, as follows:
analogno-digitalna in digitalno-analogna pretvorniška integrirana vezja:
Analogue-to-digital converters having any of the following:
analogno-digitalni pretvorniki, ki imajo katero koli od naslednjih značilnosti:
SEE ALSO 3A101
NAPOTILO: GLEJ TUDI TOČKO 3A101.
A resolution of 8 bit or more, but less than 12 bit, with a 'total conversion time' of less than 5 ns;
8-bitno ločljivost ali več, vendar manj kakor 12 bitov, in "skupni čas pretvorbe" manj kakor 5 ns;
A resolution of 12 bit with a 'total conversion time' of less than 20 ns;
12-bitno ločljivost in "skupni čas pretvorbe" manj kakor 20 ns;
A resolution of more than 12 bit but equal to or less than 14 bit with a 'total conversion time' of less than 200 ns; or
več kakor 12-bitna ločljivost, vendar enaka ali pod 14 bitov in s "skupnim časom pretvorbe" manj kakor 200 ns; ali
A resolution of more than 14 bit with a 'total conversion time' of less than 1 μs;
več kakor 14-bitna ločljivost s "skupnim časom pretvorbe" manj kakor 1 μs;
Digital-to-analogue converters with a resolution of 12 bit or more, and a "settling time" of less than 10 ns;
digitalno-analogni pretvorniki z ločljivostjo 12 bitov ali več in s "časom pretvorbe" manj kakor 10 ns;
A resolution of n bit corresponds to a quantisation of 2n levels.
Ločljivost n bitov ustreza kvantizaciji 2n stopenj.
'Total conversion time' is the inverse of sample rate.
"Skupni čas pretvorbe" je inverzija stopnje vzorca.
Electro-optical and "optical integrated circuits" designed for "signal processing" having all of the following:
elektrooptična ali "optična integrirana vezja" za "obdelavo signalov", ki imajo naslednje značilnosti:
One or more than one internal "laser" diode;
eno ali več notranjih "laserskih" diod;
One or more than one internal light detecting element; and
enega ali več notranjih elementov za zaznavanje svetlobe; in
Optical waveguides;
optični valovod;
Field programmable logic devices having any of the following:
logična vezja s programirljivim poljem, ki imajo katero koli od naslednjih značilnosti:
An equivalent usable gate count of more than 30000 (2 input gates);
ekvivalentno uporabno število vrat 30000 ali več (2 vhodnih vrat);
A typical "basic gate propagation delay time" of less than 0,1 ns; or
tipična "zakasnitev razširjenega signala " manj kakor 0,1 ns; ali
A toggle frequency exceeding 133 MHz;
delovno frekvenco več kakor 133 MHz;
Note: 3A001.a.7. includes:
Opomba: Točka 3A001.a.7 zajema:
Simple Programmable Logic Devices (SPLDs)
preprosta programirljiva logična vezja (SPLD),
Complex Programmable Logic Devices (CPLDs)
CPLD (kompleksne programirljiva logična vezja),
Field Programmable Gate Arrays (FPGAs)
FPGA (programirljiva mreža vrat),
Field Programmable Logic Arrays (FPLAs)
FPLA (programirljiva mreža logičnih nizov),
Field Programmable Interconnects (FPICs)
FPIC (programirljiv mreža medpovezav).
N.B.: Field programmable logic devices are also known as field programmable gate or field programmable logic arrays.
NAPOTILO: Programljiva logična vezja so znana tudi kot programirljive mreže vrat ali programirljive logične mreže.
Neural network integrated circuits;
nevronska mrežna integrirana vezja;
Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
naročniška integrirana vezja, katerih funkcija je neznana ali pa je proizvajalcu neznan nadzorni status opreme, v kateri se bodo uporabila ta integrirana vezja, ki imajo katero koli od naslednjih značilnosti:
More than 1000 terminals;
več kakor 1000 terminalov;
An operating frequency exceeding 3 GHz;
delovno frekvenco več kakor 3 Ghz;
Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:
digitalna integrirana vezja, razen opisanih v točkah od 3A001.a.3 do 3A001.a.10 in v točki 3A001.a.12, na podlagi katerega koli sestavljenega polprevodnika in ki imajo katero koli od naslednjih značilnosti:
An equivalent gate count of more than 3000 (2 input gates); or
ekvivalentno število vrat nad 3000 (dvoje vhodnih vrat); ali
A toggle frequency exceeding 1,2 GHz;
delovno frekvenco več kakor 1,2 GHz;
Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2N)/20480 ms, where N is the number of points;
procesorji s hitro Fourierevo transformacijo (FFT), katerih izvršni čas kompleksne FFT z N podatki je manjši od (N log2 N)/20.480 ms, pri čemer je N število podatkov;
When N is equal to 1024 points, the formula in 3A001.a.12. gives an execution time of 500 μs.
Če je N enako 1.024 točk, dobimo s formulo v točki 3A001.a.12 izvršni čas 500 μs.
Microwave or millimetre wave components, as follows:
mikrovalovne naprave ali naprave z milimetrskimi valovi:
Electronic vacuum tubes and cathodes, as follows:
elektronske vakuumske elektronke in katode:
Note 1: 3A001.b.1. does not control tubes designed or rated for operation in any frequency band which meets all of the following characteristics:
Opomba 1: Točka 3A001.b.1 se ne nanaša na elektronke, izdelane ali prirejene za frekvenčni pas, ki ima vse naslednje lastnosti:
Does not exceed 31,8 GHz; and
ne presega 31,8 GHz; in
Is "allocated by the ITU" for radio-communications services, but not for radio-determination.
je "dodeljen po ITU" za storitve radijske komunikacije, ne pa za radijsko določanje.
Note 2: 3A001.b.1. does not control non- "space-qualified" tubes which meet all of the following characteristics:
Opomba 2: 3A001.b.1. se ne nanaša na "za vesoljsko uporabo neprimerne" elektronke, ki imajo vse naslednje lastnosti:
An average output power equal to or less than 50 W; and
Povprečna izhodna moč 50 W ali manj; in
Designed or rated for operation in any frequency band which meets all of the following characteristics:
izdelane ali prirejene za frekvenčni pas, ki ima vse naslednje lastnosti:
Exceeds 31,8 GHz but does not exceed 43,5 GHz; and
presega 31,8 GHz, vendar ne 43,5 GHz; in
Travelling wave tubes, pulsed or continuous wave, as follows:
elektronke na potujoče valove, impulzne ali zvezno delujoče:
Operating at frequencies exceeding 31,8 GHz;
ki delujejo na frekvencah, višjih od 31,8 Ghz;
Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;
ki imajo katodni grelni element z vklopnim časom do nazivne moči RF manj kakor tri sekunde;
Coupled cavity tubes, or derivatives thereof, with a "fractional bandwidth" of more than 7 % or a peak power exceeding 2,5 kW;
elektronke s sklopljeno votlino ali njihovi derivati z "delno pasovno širino", večjo od 7 %, ali z maksimalno močjo, večjo od 2,5 kW;
Helix tubes, or derivatives thereof, with any of the following characteristics:
vijačne elektronke ali njihovi derivati, ki imajo katero koli od naslednjih značilnosti:
An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;
njihova "trenutna pasovna širina" je več kakor oktava, povprečna moč (izražena v kW), pomnožena s frekvenco (izraženo v Ghz), pa več kakor 0,5;
An "instantaneous bandwidth"of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or
njihova "trenutna pasovna širina" je ena oktava ali manj, povprečna moč (izražena v kW), pomnožena s frekvenco (izraženo v Ghz), pa več kakor 1; ali
Being "space qualified";
so "primerni za vesolje".
Crossed-field amplifier tubes with a gain of more than 17 dB;
ojačevalne elektronke z navzkrižnim poljem in z ojačenjem, večjim od 17 dB;
Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm2;
impregnirane katode, izdelane za elektronke, ki proizvajajo neprekinjeno gostoto toka več kakor 5 A/cm2 v nazivnih pogojih delovanja;
Microwave monolithic integrated circuits (MMIC) power amplifiers having any of the following:
ojačevalniki z mikrovalovnimi monolitnimi integriranimi vezji (MMIC), ki imajo katero koli od naslednjih značilnosti:
Rated for operation at frequencies exceeding 3,2 GHz up to and including 6 GHz and with an average output power greater than 4W (36 dBm) with a "fractional bandwidth" greater than 15 %;
so primerni za delovanje na frekvencah več kot 3,2 GHz do vključno 6 GHz in s povprečno izhodno močjo večjo od 4W (36 dBm) z "delno pasovno širino" večjo kot 15 %;
Rated for operation at frequencies exceeding 6 GHz up to and including 16 GHz and with an average output power greater than 1W (30 dBm) with a "fractional bandwidth" greater than 10 %;
so primerni za delovanje na frekvencah več kot 6 GHz do vključno 16 GHz in s povprečno izhodno močjo večjo od 1 W (30 dBm) z "delno pasovno širino" večjo kot 10 %;
Rated for operation at frequencies exceeding 16 GHz up to and including 31,8 GHz and with an average output power greater than 0,8W (29 dBm) with a "fractional bandwidth" greater than 10 %;
so primerni za delovanje na frekvencah več kot 16 GHz do vključno 31,8 GHz in s povprečno izhodno močjo večjo od 0,8 W (29 dBm) z "delno pasovno širino" večjo kot 10 %;
Rated for operation at frequencies exceeding 31,8 GHz up to and including 37,5 GHz;
so primerni za delovanje na frekvencah več kot 31,8 GHz do vključno 37,5 GHz;
Rated for operation at frequencies exceeding 37,5 GHz up to and including 43,5 GHz and with an average output power greater than 0,25W (24 dBm) with a "fractional bandwidth" greater than 10 %; or
so primerni za delovanje na frekvencah več kot 37,5 GHz do vključno 43,5 GHz in s povprečno izhodno močjo večjo od 0,25 W (24 dBm) z "delno pasovno širino" večjo kot 10 %; ali
Rated for operation at frequencies exceeding 43,5 GHz.
delujejo na frekvencah, višjih od 43,5 GHz.
Note 1: 3A001.b.2. does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40,5 GHz to 42,5 GHz.
Opomba 1: Točka 3A001.b.2 ne ureja opreme za radiodifuzijske satelite, izdelane ali prirejene za delovanje v frekvenčnem pasu od 40,5 GHz do 42,5 GHz.