mwirth-epo/epo-nmt-datasets huggingface dataset:
在该图1中，驱动电路1具有驱动电压切换部2、低速控制部3、增速控制部4和增速切换部5。
Referring to FIG. 1, the driving circuit, 1, includes a driving voltage switching device 2, a low-speed control device 3, a speed-increase control device 4, and a speed-increase switching device 5.
驱动电压切换部2具有如下功能：根据从没有特别图示的外部的上级控制装置输入的控制信号的变化，将所输出的驱动电压切换为正极电位(图示的例子的+Vcc电位)和负极电位(图示的例子的0电位)中的任何一者。
The driving voltage switching device 2 has a function of, based on a change in a control signal input from an external upper-level controller (not illustrated), switching a driving voltage to be output between positive potential (+Vcc potential in the illustrated example) and negative potential (zero potential in the illustrated example).
控制信号是通过H电平(高电平)和L电平(低电平)这两个值来表示的信号，驱动电压切换部2在控制信号为H电平的情况下，以正极电位输出驱动电压，在控制信号为L电平的情况下，以负极电位输出驱动电压。
When the control signal is H level, the driving voltage switching device 2 outputs a positive-potential driving voltage.
低速控制部3具有以下功能：施加栅极电压以使得针对施加于主电路的MOSFET(以下，称为主电路MOSFET 100)的栅极端子Gm(控制端子)与源极端子Sm之间的上述栅极电压(控制电压)以低速进行增减变化。
The low-speed control device 3 has a function of applying the gate voltage (control voltage) to between the gate terminal, Gm (control terminal), and the source terminal, Sm, of the MOSFET (hereinafter referred to as main circuit MOSFET 100) in the main circuit such that the gate voltage is increase-decrease changeable at a low speed.
例如，低速控制部3如后述那样在通过上述驱动电压切换部2来切换驱动电压时，限制流入或流出到栅极端子Gm的电流，并以低速对栅极电压进行增减变化。
For example, upon switching of the driving voltage by the driving voltage switching device 2, as described later, the low-speed control device 3 makes an increase-decrease change in the gate voltage at a low speed by limiting the current flowing into or out of the gate terminal Gm.
增速控制部4具有以下功能：进行控制以使得将基于上述低速控制部3的主电路MOSFET 100的栅极电压的增减变化的变化速度增大。
The speed-increase control device 4 has a function of executing a speed-increase control of increasing the speed of the increase-decrease change that the low-speed control device 3 made in the gate voltage applied to the main circuit MOSFET 100.
在图示的例子中，增速控制部4通过流入比上述低速控制部3流入到主电路MOSFET 100的栅极端子Gm的电流更多的电流而充电、或者流出比所流出的电流更多的电流而放电，来进行上述的增速控制。
In the illustrated example, the speed-increase control device 4 performs this speed-increase control by causing the low-speed control device 3 to: increase the current flowing into the gate terminal Gm of the main circuit MOSFET 100, thereby charging the main circuit MOSFET 100; or increase the current flowing out of the gate terminal Gm, thereby discharging the main circuit MOSFET 100.
关于该增速控制的内容，后面将会详细叙述。
Content of the speed-increase control will be detailed later.
增速切换部5具有以下功能：切换有无基于上述增速控制部4的增速控制(动作/非动作、功能/非功能)和增速变化的大小。
The speed-increase switching device 5 has a function of: switching between an execution and a non-execution (operating/not operating; functioning/not functioning) of the speed-increase control executed by the speed-increase control device 4; and switching the level of the speed-increase change caused by the speed-increase control.
在该图1中，增速切换部5具有定时调整部6、通电检测部7和通电切换部8。
Referring to FIG. 1, the speed-increase switching device 5 includes a timing adjustment device 6, a conduction detection device 7, and a conduction switching device 8.
定时调整部6具有以下功能：在从通过上述驱动电压切换部2切换驱动电压后经过了预定时间的切换定时，对有无基于上述增速控制部4的增速控制进行切换。
The timing adjustment device 6 performs the switching at a switching timing at which a predetermined period of time has passed since the driving voltage switching device 2 made the switching between driving voltages.
通电检测部7具有以下功能：对主电路MOSFET 100在其漏极端子Dm与源极端子Sm(一对主端子)之间通电的主电流的增减变化状态(不是经时恒定状态而是增减变化的状态)进行检测。
The conduction detection device 7 has a function of detecting an increase-decrease change state of the main current conducted between the drain terminal Dm and the source terminal Sm (the pair of main terminals) of the main circuit MOSFET 100 (the increase-decrease change state is a state in which the main current is increasing or decreasing over time, instead of being constant).
通电切换部8具有以下功能：在上述通电检测部7检测到主电流的增减变化状态时增大基于上述增速控制部4的增速控制的增速变化。
The conduction switching device 8 has a function of, upon detection of the increase-decrease change state of the main current by the conduction detection device 7, making a switching to increase the speed-increase change in the speed-increase control executed by the speed-increase control device 4.
此外，针对以上的增速切换部5中增速控制的切换功能，也将在后面详细叙述。
It is to be noted that the above-described function of the speed-increase switching device 5 to switch the speed-increase control will be detailed later.
<驱动电路的具体电路构成例>
Specific Circuit Configuration Example of Driving Circuit
接着，图2中示出上述图1所示的本实施方式的驱动电路1的具体安装例、即电路图。
Next, FIG. 2 is a circuit diagram illustratim a specific mounting example of the driving circuit 1 according to this embodiment illustrated in FIG. 1.
在该图2中，上述驱动电压切换部2由所谓的推挽电路21构成，在控制信号为H电平的情况下，以+Vcc电位输出驱动电压，在控制信号为L电平的情况下，以0电位输出驱动电压。
Referring to FIG. 2, the driving voltage switching device 2 is implemented by a “push-pull circuit 21”.
上述低速控制部3由上述推挽电路21的输出与主电路MOSFET 100的栅极端子Gm之间连接的固定电阻值的栅极电阻31(控制电阻)构成，限制推挽电路21所输出的电流并输入到主电路MOSFET 100的栅极端子Gm。
When the control signal is H level, the driving voltage switching device 2 outputs a +Vcc-potential driving voltage.
上述定时调整部6例如由没有特别图示的CR时间常数定时器电路等构成，在本实施方式的例子中，具有打开定时调整电路61和关闭定时调整电路62这两个调整电路。
When the control signal is L level, the driving voltage switching device 2 outputs a zero-potential driving voltage.
打开定时调整电路61在上述推挽电路21所输出的驱动电压从0电位切换为+Vcc电位时，输出超过后述的打开增速控制用MOSFET 41的栅极阈值电压的电压。
The low-speed control device 3 is implemented by a gate resistor 31 (control resistor).
然后，设定CR时间常数，以使得输出电压随时间连续下降，并在从驱动电压的切换起经过了预定时间之后的切换定时成为上述栅极阈值电压以下。
The gate resistor 31 has a fixed resistance value and is provided between and connected to the output of the push-pull circuit 21 and the gate terminal Gm of the main circuit MOSFET 100.
关闭定时调整电路62在上述推挽电路21所输出的驱动电压从+Vcc电位切换为0电位时，输出比后述的关闭增速控制用MOSFET 42的栅极阈值电压低的电压。
The push-pull circuit 21 limits the current to be output, and inputs the current into the gate terminal Gm of the main circuit MOSFET 100.
然后，设定CR时间常数，以使得输出电压随时间连续上升，并在从驱动电压的切换起经过了预定时间之后的切换定时成为上述栅极阈值电压以上。
The timing adjustment device 6 is implemented by, for example, a CR time constant timer circuit, not illustrated.
上述通电检测部7由如下电路构成：在主电路MOSFET 100所连接的主电路(图示的例子中与源极端子Sm连接的电路部分)中主电流的通电量发生增减变化时，检测与通过其潜在电感分量或布线之间的磁耦合生成的变化量对应的电压。
In this embodiment, the timing adjustment device 6 includes two adjustment circuits, namely, a turn-ON timing adjustment circuit 61 and a turn-OFF timing adjustment circuit 62.
此外，关于该通电检测部7的具体安装构成例，在后面详细叙述。
Upon switching of the driving voltage output from the push-pull circuit 21 from zero potential to +Vcc potential, the turn-ON timing adjustment circuit 61 outputs a voltage that exceeds a gate threshold voltage of a turn-ON speed-increase control MOSFET 41, described later.
上述通电切换部8例如由以没有特别图示的CR电路等安装的通电切换电路81构成，在上述通电检测部7检测到与上述变化量对应的电压时，将预定的电压输出为电流检测信号。
In this respect, a CR time constant is set such that the output voltage is caused to decrease continuously over time and becomes equal to or less than the above-described gate threshold voltage at the switching timing when a predetermined period of time has passed since a switching between driving voltages was made.
上述增速控制部4在图示的例子中由半导体开关元件的MOSFET构成，在本实施方式的例子中，具有打开增速控制用MOSFET 41和关闭增速控制用MOSFET 42这两个MOSFET。
Upon switching of the driving voltage output from the push-pull circuit 21 from +Vcc potential to zero potential, the turn-OFF timing adjustment circuit 62 outputs a voltage that is lower than a gate threshold voltage of a turn-OFF speed-increase control MOSFET 42, described later.
在打开增速控制用MOSFET 41中，其源极端子S1与+Vcc侧连接，其漏极端子D1与主电路MOSFET 100的栅极端子Gm连接，对其栅极端子G1施加将上述打开定时调整电路61的输出电压与上述通电切换电路81的输出电压相加而得的电压。
The turn-ON speed-increase control MOSFET 41 includes: a source terminal S 1, which is connected to the +Vcc side of the MOSFET; a drain terminal D 1, which is connected to the gate terminal Gm of the main circuit MOSFET 100; and a gate terminal GI, to which a voltage obtained by adding the output voltage of the turn-ON timing adjustment circuit 61 to the output voltage of the conduction switch circuit 81 is applied.
在关闭增速控制用MOSFET 42中，其源极端子S2与主电路MOSFET 100的源极端子Sm连接，其漏极端子D2与主电路MOSFET 100的栅极端子Gm连接，对其栅极端子G2施加将上述关闭定时调整电路62的输出电压与上述通电切换电路81的输出电压相加而得的电压。
The turn-OFF speed-increase control MOSFET 42 includes: a source terminal S 2, which is connected to the source terminal Sm of the main circuit MOSFET 100; a drain terminal D 2, which is connected to the gate terminal Gm of the main circuit MOSFET 100; and a gate terminal G 2, to which a voltage obtained by adding the output voltage of the turn-OFF timing adjustment circuit 62 to the output voltage of the conduction switch circuit 81 is applied.
此外，在以上描述中，将各调整电路61、62的输出电压与通电切换电路81的输出电压相加的加算器43、44例如只要以没有特别图示的CR电路等来安装即可。
It is to be noted that in the above description, adders 43 and 44 add the output voltages of the adjustment circuits 61 and 62 to the output voltage of the conduction switch circuit 81.
另外，为了防止自打开等错误的打开，可以将推挽电路21、关闭增速控制用MOSFET 42和主电路(即，主电路MOSFET 100的源极端子Sm侧)之间的电路结构设为当控制信号为L电平时将驱动电压设为小于0的负电压的反向偏置(没有特别图示)。
It is also to be noted that in order to prevent an erroneous turn-ON, such as a self-turn-ON, from occurring, the circuit configuration between the push-pull circuit 21, the turn-OFF speed-increase control MOSFET 42, and the main circuit (that is, the source terminal Sm side of the main circuit MOSFET 100) may be reverse-biased such that when the control signal is L level, the driving voltage is a negative voltage of less than 0 (this circuit configuration is not illustrated).
如上所述，MOSFET(此时主电路MOSFET 100)等半导体元件用于主电路中切换大电流的通电和切断的开关元件。
As described above, semiconductor elements such as MOSFETs (in the illustrated example, the main circuit MOSFET 100) are used as switching elements to switch between making and breaking conduction of a large amount of current in main circuits.
这样的半导体元件根据施加于栅极端子Gm与源极端子Sm之间的栅极电压(控制电压)的高低及其施加时间而改变其他的源极端子Sm与漏极端子Dm之间的主电流(即，主电路MOSFET 100的漏极电流)的流通状态(通电、切断)和通电量、以及主端子间电压(即，主电路MOSFET 100的漏极电压)。
The level of the gate voltage applied and the period of time decide: a circulation state (in which a conduction is made or broken) of the main current between another source terminal Sm and the drain terminal Dm (that is, the main current is the chain current of the main circuit MOSFET 100); the conduction amount of the main current; and an inter-main-terminal voltage (which is the drain voltage of the main circuit MOSFET 100).
并且，例如在设想针对逆变器等电力转换装置的应用的情况下，以避免马达端子中产生的电涌等为理由，限定有将主端子间电压的增减变化期间确保在预定时间以上的规格。
When such semiconductor element is intended to be applied to a power converter such as an inverter, there is a standard to comply with; it is required to keep the increase-decrease change period of the inter-main-terminal voltage to equal to or longer than a predetermined period of time, which is specified for reasons such as avoidance of a surge occurring at a motor terminal.
但是，在切换通电和切断的期间，会产生作为瞬间的主端子间电压与主电流的乘积的开关损耗，越长获取通电与切断的切换时间，乘以开关损耗的消耗电力的总量越增大。
As the period of time for switching between making and breaking of conduction becomes longer, the total amount of power consumed increases, which is equivalent to an accumulation of switching losses.
与此相对，在本实施方式中，在对主电路MOSFET 100的栅极电压进行控制的驱动电路1中包括：驱动电压切换部2，根据控制信号的变化来切换所输出的驱动电压；低速控制部3，使栅极电压以低速进行增减变化；增速控制部4，使基于低速控制部3的栅极电压的变化速度增大；以及增速切换部5，对有无基于增速控制部4的增速控制和增速变化的大小进行切换。
Under the circumstances, the driving circuit 1 according to this embodiment, which controls the gate voltage of the main circuit MOSFET 100, includes: the driving voltage switching device 2, which based on a change in the control signal, makes a switching between driving voltages and outputs a driving voltage, among the driving voltages, that has been selected in the switching; the low-speed control device 3, which makes an increase-decrease change in the gate voltage at a low speed; the speed-increase control device 4, which increases the speed of the increase-decrease change in the gate voltage made by the low-speed control device 3; and the speed-increase switching device 5, which switches between the execution and the non-execution of the speed-increase control executed by the speed-increase control device 4, and switches the level of the speed-increase change caused by the speed-increase control.
由此，能够通过低速模式和增速模式(后述的第一增速区间、第二增速区间)的组合来设定在控制信号变化后的主电流与主端子间电压的增减变化序列。
This configuration ensures that increase-decrease change sequences of the main current and the inter-main-terminal voltage after a change in the control signal can be set in the form of a combination of a low-speed mode and a speed-increase mode (which are a first speed-increase section and a second speed-increase section, respectively, as described later).
即，能够以各种组合设计主电流与主端子间电压各自的时序增减变化曲线中的倾斜。
In other words, a time-series increase-decrease change curve of each of the main current and the inter-main-terminal voltage can be designed to have various inclination combinations.
因此，即使以具有任何的时序控制特性的半导体元件作为驱动对象，也能够设计主电流与主端子间电压的增减变化序列，以使得开关损耗的总量根据其控制特性曲线与主端子间电压的最低增减变化期间而减少。
This ensures that no matter which time-series control characteristics a driving-target semiconductor element has, the increase-decrease change sequences of the main current and the inter-main-terminal voltage can be designed to decrease the total amount of switching loss based on the control characteristic curve of the semiconductor element and the minimum increase-decrease change period of the inter-main-terminal voltage.
以下，依次说明这样的本实施方式的功能的细节。
The functions described in this embodiment will be detailed below in order.
<关于主电路MOSFET的时序控制特性和开关损耗>
Time-Series Control Characteristics of Main Circuit MOSFET and Switching Loss
首先，为了详细说明主电路MOSFET 100的时序控制特性和开关损耗，针对应用了图3所示那样的比较例的驱动电路91的情况进行说明。
For detailed description of time-series control characteristics of the main circuit MOSFET 100 and switching loss, a case where a driving circuit 91 according to the comparative example illustrated in FIG. 3 is applied will be described first.
在该图3所示的比较例的驱动电路91中，与上述图2所示的本实施方式的驱动电路1相比，其区别在于，不具备各定时调整电路61、62、各增速控制用MOSFET 41、42、各加算器43、44、通电检测部7和通电切换电路81。
A comparison between the driving circuit 91 according to the comparative example illustrated in FIG. 3 and the driving circuit 1 according to the embodiment illustrated in FIG. 2 shows that the driving circuit 91 is different from the driving circuit 1 in that the driving circuit 91 does not include the timing adjustment circuits 61 and 62, the speed-increase control MOSFETs 41 and 42, the adders 43 and 44. the conduction detection device 7. and the conduction switch circuit 81.
即，比较例的驱动电路91成为如下构成：仅将驱动电压切换部2的推挽电路21根据控制信号而切换输出的+Vcc电位和0电位的各驱动电压分别输入到主电路MOSFET 100的栅极端子Gm，以使得栅极电压通过作为低速控制部3的栅极电阻31的电流限制而以低速进行增减变化。
That is, the driving circuit 91 according to the comparative example has such a simple configuration that the +Vcc-potential driving voltage and the zero-potential driving voltage, which are switchably output from the push-pull circuit 21 of the driving voltage switching device 2 based on the control signal, are input into the gate terminal Gm of the main circuit MOSFET 100 so that the gate voltage is increase-decrease changed at a low speed by a current limitation performed at the gate resistor 31, which is the low-speed control device 3.
图4示出用这样的比较例的驱动电路91打开控制了主电路MOSFET 100时的序列时序图，图5示出关闭控制时的序列时序图。
FIG. 4 illustrates a sequence time chart of a turn-ON control of the main circuit MOSFET 100 using the driving circuit 91 according to the comparative example, and FIG. 5 illustrates a sequence time chart of a turn-OFF control of the main circuit MOSFET 100 using the driving circuit 91.
首先，在图4的打开序列中，作为该序列开始前的初始状态，主电路MOSFET 100的漏极电流(即，相当于主电路的主电流)为0，并且主电路MOSFET 100的漏极电压(相当于此时的源极端子Sm与漏极端子Dm之间的端子间电压)基本成为直流母线204(参照后述的图13)之间的电压(断开电压)。
In the turn-ON sequence illustrated in FIG. 4, an initial state before the start of this sequence is such that the drain current of the main circuit MOSFET 100 (equivalent to the main current of the main circuit) is 0, and that the drain voltage of the main circuit MOSFET 100 (equivalent to the inter-terminal voltage between the source terminal Sm and the drain terminal Dm in this case) is approximately the voltage (OFF voltage) between DC bus lines 204 (see FIG. 13, described later).
然后，在控制信号从L电平切换为H电平时(参照图中的t1的定时)，开始该打开序列，在此之前为0电位的主电路MOSFET 100的栅极电压会增加(参照图中的工序I)。
Upon switching of the control signal from L level to H level (see t 1 timing in the relevant drawing), the turn-ON sequence starts, increasing the gate voltage of the main circuit MOSFET 100, which was hitherto at zero potential (see step I in the relevant drawing).
并且，当栅极电压超过主电路MOSFET 100的栅极阈值电压时(参照图中的t2的定时)，随着栅极电压的上升，主电路MOSFET 100的漏极电流从0增加到负荷电流(参照图中的工序II)。
When the gate voltage has exceeded the gate threshold voltage of the main circuit MOSFET 100 (see t 2 timing in the relevant drawing), the drain current of the main circuit MOSFET 100 increases from 0 to load current, in accordance with the increase in the gate voltage (see step II in the relevant drawing).
此处，在本比较例中，将这样的漏极电流增加的工序II中所需的时间设为漏极电流的增减变化期间Ti。
In this comparative example, the period of time spent in increasing the drain current at step II will be referred to as increase-decrease change period Ti of the drain current.
并且，在上述工序II的结束时间点(参照图中的t3的定时)之后，漏极电压从断开电压减少到MOSFET 100的接通电压(参照图中的工序III)。
At and after the point of time at which step II ends (see t 3 timing in the relevant drawing), the drain voltage decreases from OFF voltage to ON voltage of the MOSFET 100 (see step III in the relevant drawing).
另外，在该工序III的期间，栅极电压基本持续保持恒定。
During step III, the gate voltage is kept approximately constant.
如此，将漏极电压减少的工序III中所需的时间设为漏极电压的增减变化期间Tv。
The period of time spent in decreasing the drain voltage at step III will be referred to as increase-decrease change period Tv of the drain voltage.
并且，在上述工序III的结束时间点(参照图中的t4的定时)之后，栅极电压增加到驱动电压的+Vcc(参照图中的工序IV)。
At and after the point of time at which step III ends (see t 4 timing in the relevant drawing), the gate voltage increases to +Vcc of the driving voltage (see step IV in the relevant drawing).
然后，当结束该工序IV时(参照图中的t5的定时)，结束该主电路MOSFET 100从主电流的切断状态进入到通电状态的打开序列。
Upon ending of step IV (see t 5 timing in the relevant drawing), the turn-ON sequence ends, which is a sequence in which the main circuit MOSFET 100 shifts from the main-current non-conduction state to the main-current conduction state.
如上所述，在主电路MOSFET 100的半导体元件中，具有如下时序控制特性：在打开序列的整个工序I～IV中，随着栅极电压的上升，首先漏极电流从0增加到负荷电流之后，漏极电压从断开电压向接通电压减少。
Thus, the semiconductor element of the main circuit MOSFET 100 has such a time-series control characteristic that in accordance with the increase in the gate voltage at all steps I to IV of the turn-ON sequence, the drain current increases from 0 to the load current, and then the drain voltage decreases from the OFF voltage to the ON voltage.
这样的主电路MOSFET 100的时序控制特性在图5所示的关闭序列中也以相反的时序顺序出现。
This time-series control characteristic of the main circuit MOSFET 100 appears in a backward time-series order in the turn-OFF sequence illustrated in FIG. 5.
即，在将上述工序I设为栅极阈值电压以下的栅极电压的增减变化工序、将上述工序II设为漏极电流的增减变化工序、将上述工序III设为漏极电压的增减变化工序、以及将上述工序IV设为最大值附近的栅极电压的增减变化工序的情况下，成为控制信号从H电平切换为L电平并从开始该关闭序列起经过工序IV→工序III→工序II→工序I的相反顺序的时序控制特性。
Specifically, step I will be assumed as a step of increase-decrease changing the gate voltage at equal to or less than the gate threshold voltage, step II will be assumed as a step of increase-decrease changing the chain current, step III will be assumed as a step of increase-decrease changing the drain voltage, and step IV will be assumed as a step of increase-decrease changing the gate voltage at or near its maximum value.
即，在主电路MOSFET 100的半导体元件中，具有如下时序控制特性：在关闭序列的整个工序IV～I中，随着栅极电压的减少，首先漏极电压从接通电压增加到断开电压之后，漏极电流从负荷电流向0减少。
That is, the semiconductor element of the main circuit MOSFET 100 has such a time-series control characteristic that in accordance with the decrease in the gate voltage at all steps IV to I of the turn-OFF sequence, the drain voltage increases from the ON voltage to the OFF voltage first, and then the drain current decreases from the load current to 0.
起因于如上所述的MOSFET的时序控制特性，在漏极电流和漏极电压中的任何一者增减变化并切换通电和切断的期间，逐次生成开关损耗，该开关损耗通过瞬间主端子间电压(漏极电压)与主电流(漏极电流)的乘积来计算出。
Because of this time-series control characteristic of the MOSFET, there occurs one switching loss after another during a switching between making and breaking of conduction by increase-decrease changing either the drain current or the drain voltage.
并且，在打开序列和关闭序列的任一者中，从各自的序列整体观察，以在漏极电流的增减变化期间Ti和漏极电压的增减变化期间Tv的各期间中通过累计计算出的总量产生开关损耗(参照各图中的影线部分)。
As a result, in each of the turn-ON sequence and the turn-OFF sequence as a whole, the switching loss appears as the total of switching losses accumulating in the increase-decrease change period Ti of the drain current and the increase-decrease change period Tv of the drain voltage (see the hatched part in the relevant drawings).
另外，在另一方面，在主电路MOSFET 100的半导体元件中，例如降低栅极电阻31的电阻值，越增加打开序列中流入到栅极端子Gm的电流、或者越增加关闭序列中从栅极端子Gm流出的电流时，越能够增大各工序I～IV中栅极电压的增减变化的变化率，即，能够增大该增减变化曲线的倾斜度(但是，工序III中栅极电压为基本恒定)。
Also in the semiconductor element of the main circuit MOSFET 100, for example, as the current flowing into the gate terminal Gm in the turn-ON sequence increases or as the current flowing out of the gate terminal Gm in the turn-OFF sequence increases by decreasing the resistance value of the gate resistor 31, the rate of the increase-decrease change of the gate voltage at steps I to IV increases; that is, the inclination of the increase-decrease change curve increases (it is to be noted, however, that the gate voltage at step III is approximately constant).
这相当于增大各工序I～IV各自的经时进行速度，并增大漏极电流、漏极电压以及栅极电压的增减变化。
This is equivalent to increasing the speed of the over-time proceeding of each of steps I to IV, thereby increasing the speed of the increase-decrease change in each of the drain current, the drain voltage, and the gate voltage.
由此，在较低地设定栅极电阻31的固定电阻值而增加从栅极端子Gm流入或流出的电流的情况下，可以缩短各工序I～IV的每一个所需的时间，即可以削减由于开关时间整体(即，打开序列或关闭序列的整体所需时间)的缩短引起的开关损耗总量。
Under the circumstances, if the current flowing into or out of the gate terminal Gm is increased by setting the fixed resistance value of the gate resistor 31 at a low value, the period of time spent at each of steps I to IV is shortened; specifically, by shortening the period of switching time as a whole (that is, the period of time required for the turn-ON sequence or the turn-OFF sequence as a whole), the total amount of switching loss is decreased.
但是，当利用主电路MOSFET 100的半导体元件时，以避免马达端子中产生的电涌电压等为理由，制定有将主端子间电压的增减变化期间Tv确保在预定时间以上的规格。
In the use of the semiconductor element of the main circuit MOSFET 100, however, there is a standard to comply with; it is required to keep the increase-decrease change period Tv of the inter-main-terminal voltage to equal to or longer than a predetermined period of time, which is specified for reasons such as avoidance of a surge occurring at a motor terminal.
即，在由于开关时间的缩短引起的开关损耗总量的削减与主电路的健全性之间存在权衡的关系。
That is, there is a trade-off relationship between: reducing the total amount of switching loss by shortening the period of switching time; and keeping the main circuit sound.
对于如上所述的主电路MOSFET 100的控制特性，本实施方式的驱动电路1具有局部执行针对栅极电压的增速控制以使得可以确保开关时间的同时削减电力损耗的功能。
In light of the above-described control characteristics of the main circuit MOSFET 100, the driving circuit 1 according to this embodiment has a function of performing a local speed-increase control of the gate voltage so as to realize a reduction in power loss while securing a sufficient period of switching time.
<关于实施方式的驱动电路的增速控制>
Speed-Increase Control Executed by Driving Circuit According to the Embodiment
以下，对本实施方式的驱动电路1所具备的增速控制的功能进行说明。
The speed-increase control function of the driving circuit 1 according to this embodiment will be described below.
首先，图6示出仅提取了上述图2所示的本实施方式的驱动电路1之中与打开控制对应地发挥功能的部分的部分电路图，图7示出其打开序列的时序图。
FIG. 6 is a partial circuit diagram illustrating those parts, among the driving circuit 1 according to this embodiment illustrated in FIG. 2, that function in the turn-ON control.
在这些图6、图7中，如上所述，打开定时调整电路61基于当控制信号上升至H电平时已切换到+Vcc电位的驱动电压，输出超过打开增速控制用MOSFET 41的栅极阈值电压的电压。
Referring to FIGS. 6 and 7, based on the driving voltage switched to +Vcc potential upon rising of the control signal to H level, the turn-ON timing adjustment circuit 61 outputs a voltage that exceeds the gate threshold voltage of the turn-ON speed-increase control MOSFET 41, as described above.