mwirth-epo/epo-nmt-datasets huggingface dataset:
其他实施例中，所述半导体结构为NMOS，所述第一掺杂区的掺杂离子包括：磷、砷和锑中的一种或多种；掺杂浓度均为1E20原子每立方厘米至3E20原子每立方厘米。
In other implementations, the semiconductor structure is an NMOS, and the doping ions of the first doped region include one or more of phosphorus, arsenic and antimony; and the doping concentration is 1E20 atoms per cubic centimeter to 3E20 atoms per cubic centimeter.
所述第一掺杂区109不宜过厚也不宜过薄。
The first doped region 109 should not be too thick or too thin.
若所述第一掺杂区109过薄，也就是说所述接触孔插塞113与所述源漏掺杂区103的接触面积较小，易导致接触孔插塞113与源漏掺杂区103的接触电阻较大。
If the first doped region 109 is too thin, that is to say, the contact area between the contact hole plug 113 and the source-drain doped region 103 is smaller, it easily results in large contact resistance between the contact hole plug 113 and the source-drain doped region 103.
所述第二掺杂区110与源漏掺杂区103的掺杂离子类型相同，第二掺杂区110的掺杂离子浓度大于所述源漏掺杂区103的掺杂离子浓度，且所述第二掺杂区110在基底上的投影覆盖所述第一掺杂区109在基底上的投影。
The doping ion type of the second doped region 110 is the same as the doping ion type of the source-drain doped region 103, the ion doping concentration of the second doped region 110 is higher than the ion doping concentration of the source-drain doped region 103, and the projection of the second doped region 110 on the base covers the projection of the first doped region 109 on the base.
在垂直于所述栅极结构106的延伸方向上，所述第二掺杂区110的宽度较大，从而接触孔插塞113顶部不易与源漏掺杂区103接触，有利于减小接触孔插塞与源漏掺杂区103的接触电阻。
In the extension direction perpendicular to the gate structure 106, the width of the second doped region 110 is larger, such that the top of the contact hole plug 113 is not easily in contact with the source-drain doped region 103, which is beneficial to reducing the contact resistance between the contact hole plug and the source-drain doped region 103.
本实施例中，所述半导体结构为PMOS，所述第二掺杂区110的掺杂离子包括：硼、镓和铟中的一种或多种。
In some implementations, the semiconductor structure is a PMOS, and the doping ions of the second doped region 110 include one or more of boron, gallium and indium.
需要说明的是，第二掺杂区110的离子掺杂浓度不宜过高也不宜过低。
It should be noted that the ion doping concentration of the second doped region 110 should not be too high or too low.
具体表述掺杂前述第一掺杂区109，在此不再赘述。
For the specific description, refer to the description related to the first doped region 109, which will not be repetitively described here.
本实施例中，第二掺杂区110的掺杂浓度均为1E20原子每立方厘米至3E20原子每立方厘米。
In some implementations, the doping concentration of the second doped region 110 is 1E20 atoms per cubic centimeter to 3E20 atoms per cubic centimeter.
其他实施例中，所述半导体结构为NMOS，所述第二掺杂区的掺杂离子包括：磷、砷和锑中的一种或多种；掺杂浓度均为1E20原子每立方厘米至3E20原子每立方厘米。
In other implementations, the semiconductor structure is an NMOS, and the doping ions of the second doped region include one or more of phosphorus, arsenic and antimony; and the doping concentration is 1E20 atoms per cubic centimeter to 3E20 atoms per cubic centimeter.
需要说明的是，所述第二掺杂区110不宜过厚也不宜过薄。
It should be noted that the second doped region 110 should not be too thick or too thin.
若所述第二掺杂区110过厚，也就是说所述第二掺杂区110的区域较大，且因为所述第二掺杂区110中的掺杂离子浓度高于所述源漏掺杂区103中的掺杂离子浓度，所述第二掺杂区110中的掺杂离子易扩散至所述鳍部101中的沟道区中，在半导体结构工作时，源漏掺杂区103源极和漏极的耗尽层扩展，导致短沟道效应较严重。
If the second doped region 110 is too thick, that is to say, the area of the second doped region 110 is larger, and because the ion doping concentration of the second doped region 110 is higher than the ion doping concentration of the source-drain doped region 103, the doping ions in the second doped region 110 are easy to diffuse into the channel region in the fin 101, and when the semiconductor structure works, the source and drain depletion layers of the source-drain doped region 103 are expanded, resulting in serious short-channel effects.
若所述第二掺杂区110过薄，沟槽112中接触孔插塞113顶部侧壁易直接与源漏掺杂区103接触，导致接触孔插塞113与源漏掺杂区103的接触电阻较大。
If the second doped region 110 is too thin, the top sidewall of the contact hole plug 113 in the groove 112 is easily in direct contact with the source-drain doped region 103, resulting in large contact resistance between the contact hole plug 113 and the source-drain doped region 103.
本实施例中，所述第二掺杂区110的厚度为2纳米至5纳米。
In some implementations, the thickness of the second doped region 110 is 2 nanometers to 5 nanometers.
本实施例中，半导体结构还包括：第三掺杂区114，第三掺杂区114位于第一掺杂区109与源漏掺杂区103之间，且与第一掺杂区109接触；第三掺杂区114的掺杂离子类型与源漏掺杂区103的掺杂离子类型相同，且第三掺杂区114的离子掺杂浓度高于源漏掺杂区103的离子掺杂浓度，且第三掺杂区114在基底上的投影覆盖第二掺杂区110在基底上的投影。
In some implementations, the semiconductor structure further includes a third doped region 114, wherein the third doped region 114 is located between the first doped region 109 and the source-drain doped region 103, and is in contact with the first doped region; and the doping ion type of the third doped region 114 is the same as the doping ion type of the source-drain doped region 103, the ion doping concentration of the third doped region 114 is higher than the ion doping concentration of the source-drain doped region 103, and the projection of the third doped region 114 on the base covers the projection of the second doped region 110 on the base.
所述第三掺杂区114进一步的加大了高浓度的掺杂区域，使得接触孔插塞113底部不易直接与源漏掺杂区103接触。
The third doped region 114 further enlarges the high-concentration doped region, making it difficult for the bottom of the formed contact hole plug 113 to be in direct contact with the source-drain doped region 103.
本实施例中，所述半导体结构为PMOS，所述第三掺杂区114的掺杂离子包括：硼、镓和铟中的一种或多种。
In some implementations, the semiconductor structure is a PMOS, and the doping ions of the third doped region 114 include one or more of boron, gallium and indium.
需要说明的是，所述第三掺杂区114的掺杂浓度不宜过大也不宜过小。
It should be noted that the doping concentration of the third doped region 114 should not be too high or too low.
若所述掺杂浓度过大，所述掺杂离子易扩散至所述鳍部101中的沟道区中，在半导体结构工作时，源漏掺杂区103源极和漏极的耗尽层扩展，导致短沟道效应较严重。
If the doping concentration is too high, the doping ions are easy to diffuse into the channel region in the fin 101, and when the semiconductor structure works, the source and drain depletion layers of the source-drain doped region 103 are expanded, resulting in serious short-channel effects.
若所述掺杂浓度较小，所述第三掺杂区114没有起到减小接触孔插塞113与源漏掺杂区103接触电阻的目的。
If the doping concentration is too low, the third doped region 114 cannot achieve the purpose of reducing the contact resistance between the contact hole plug 113 and the source-drain doped region 103.
本实施例中，掺杂浓度为5E19原子每立方厘米至15E19原子每立方厘米。
In this example, the doping concentration is 5E19 atoms per cubic centimeter to 15E19 atoms per cubic centimeter.
其他实施例中，所述半导体结构为NMOS，所述第三掺杂区的掺杂离子包括：磷、砷和锑中的一种或多种；掺杂浓度为5E19原子每立方厘米至15E19原子每立方厘米。
In other implementations, the semiconductor structure is an NMOS, and the doping ions of the third doped region include one or more of phosphorus, arsenic and antimony; and the doping concentration is 5E19 atoms per cubic centimeter to 15E19 atoms per cubic centimeter.
需要说明的是，所述第三掺杂区114不宜过厚也不宜过薄。
It should be noted that the third doped region 114 should not be too thick or too thin.
若所述第三掺杂区114过厚，也就是说所述第三掺杂区114的区域较大，且因为所述第三掺杂区114中的掺杂离子浓度高于所述源漏掺杂区103中的掺杂离子浓度，所述第三掺杂区114中的掺杂离子易扩散至所述鳍部101中的沟道区中，在半导体结构工作时，源漏掺杂区103源极和漏极的耗尽层扩展，导致短沟道效应较严重。
If the third doped region 114 is too thick, that is to say, the area of the third doped region 114 is larger, because the ion doping concentration of the third doped region 114 is higher than the ion doping concentration of the source-drain doped region 103, the doping ions in the third doped region 114 can easily diffuse into the channel region in the fin 101, and when the semiconductor structure works, the source and drain depletion layers of the source-drain doped region 103 are expanded, resulting in serious short-channel effects.
若所述第三掺杂区114过薄，不易起到加大高浓度掺杂区域的目的。
If the third doped region 114 is too thin, it is not easy to achieve the purpose of enlarging the high-concentration doped region.
需要说明的是，接触孔插塞113的底面与源漏掺杂区103顶面距离不宜太大也不宜太小。
It should be noted that the distance between a bottom surface of the contact hole plug 113 and the top surface of the source-drain doped region 103 should not be too great or too small.
若距离太大，也就是接触孔插塞113过深的位于源漏掺杂区103中，接触孔插塞113位于第一掺杂区109中，因此，第一掺杂区109和第三掺杂区114的总厚度过厚，第一掺杂区109和第三掺杂区114中的掺杂离子易扩散至鳍部101中的沟道区中，在半导体结构工作时，源漏掺杂区103源极和漏极的耗尽层扩展，导致短沟道效应较严重。
If the distance is too great, that is, the contact hole plug 113 is too deep in the source-drain doped region 103 and the contact hole plug 113 is located in the first doped region 109, the total thickness of the first doped region 109 and the third doped region 114 is too large, the doping ions in the first doped region 109 and the third doped region 114 are easy to diffuse into the channel region in the fin 101, and when the semiconductor structure works, the source and drain depletion layers of the source-drain doped region 103 are expanded, resulting in serious short-channel effects.
本实施例中，接触孔插塞113的底面与源漏掺杂区103顶面的距离为2纳米至15纳米。
In some implementations, the distance between the bottom surface of the contact hole plug 113 and the top surface of the source-drain doped region 103 is 2 nanometers to 15 nanometers.
此外，因为源漏掺杂区103的离子掺杂浓度小于第一掺杂区109、第二掺杂区110和第三掺杂区114的掺杂浓度，因此，从接触孔插塞113指向衬底100中沟道区的方向，离子掺杂浓度递减，从而第一掺杂区109、第二掺杂区110和第三掺杂区114中的掺杂离子不易穿过源漏掺杂区103进入沟道区，使得半导体工作时源漏掺杂区103源极和漏极的耗尽层不易扩展，减缓短沟道效应。
In addition, because the concentration of the source-drain doped region 103 is lower than the doping concentration of the first doped region 109, the second doped region 110 and the third doped region 114, the ion doping concentration gradually decreases in the direction from the contact hole plug 113 to the channel region in the substrate 100, such that the doping ions in the first doped region 109, the second doped region 110 and the third doped region 114 are not easy to pass through the source-drain doped region 103 and enter the channel region, the source and drain depletion layers of the source-drain doped region 103 are not easily expanded when the semiconductor works, and the short-channel effects are relieved.
所述半导体结构还包括：金属硅化物层(图中未示出)，位于所述第一掺杂区109和接触孔插塞113之间以及第二掺杂区110与接触孔插塞113之间。
The semiconductor structure further includes a metal silicide layer (not shown), which is located between the first doped region 109 and the contact hole plug 113, and between the second doped region 110 and the contact hole plug 113.
所述半导体结构可以采用前述实施例所述的形成方法所形成，也可以采用其他形成方法所形成。
The semiconductor structure may be formed by adopting the forming method described in the above embodiment or by adopting other forming methods.
对本实施例所述半导体结构的具体描述，可参考前述实施例中的相应描述，本实施例在此不再赘述。
For the specific description of the semiconductor structure described in the embodiment, refer to the corresponding description in the above embodiment, which will not be repetitively here.
虽然本发明实施例披露如上，但本发明实施例并非限定于此。
Although embodiments and implementations of the present disclosure are disclosed as above, the embodiments of the present disclosure are not limited thereto.
任何本领域技术人员，在不脱离本发明实施例的精神和范围内，均可作各种更动与修改，因此本发明实施例的保护范围应当以权利要求所限定的范围为准。
One skilled in the art may make various changes and modifications without departing from the spirit and scope of the embodiments of the present disclosure.
1.一种用于由两种不同尺寸的胶囊(2)来生产饮料的冲泡装置(1)；所述冲泡装置(1)包括两个部件(3、4)，所述两个部件是相对的并且能在打开或装载位置与关闭或冲泡位置之间相互移动，在所述打开或装载位置中，能将胶囊(2)装载在所述两个部件(3、4)之间，在所述关闭或冲泡位置中，所述两个部件(3、4)相联接并且在所述两个部件之间限定容纳所述胶囊(2)的冲泡室；所述冲泡装置(1)的所述两个部件中的一个部件(4)包括杯形本体(8)，所述杯形本体包括第一部分(13)和第二部分(16)，在所述第一部分与所述第二部分之间限定座部(AB)，所述座部设计成在所述杯形本体(8)朝向所述关闭位置移动期间接收所述胶囊(2)；所述第二部分(16)设计成相对于所述第一部分(13)在较小座部位置与较大座部位置之间滑动，在所述较小座部位置中，所述座部(AB)的尺寸设置成容纳较小胶囊(2A)，在所述较大座部位置中，所述座部(AB)的尺寸设置成容纳较大胶囊(2B)；致动装置(23)设置为使所述杯形本体(8)从所述打开位置移动到所述关闭位置，以及从所述关闭位置移动到所述打开位置；其特征在于，所述第二部分(16)安装成通常采用所述较小座部位置，并且在所述杯形本体(8)朝向所述关闭位置移动期间由于与所述较大胶囊(2B)相互作用，所述第二部分移动到所述较大座部位置；并且在于，所述致动装置(23)被构造成使所述第一部分(13)保持仍位于所述关闭位置中，并且包括阻挡装置(30)，所述阻挡装置被构造成在所述关闭位置中限定约束部，以当所述第二部分(16)位于通常的所述较小座部位置中时保持所述第二部分(16)不动。
A brewing device (1) for producing a beverage from two differently sized capsules (2); the brewing device (1) comprises two parts (3, 4) opposite and mutually movable between an open or loading position, in which a capsule (2) is loadable between the two parts (3, 4), and a closing or brewing position, in which the two parts (3, 4) are coupled and define therebetween a brewing chamber housing the capsule (2); one of the two parts (4) of the brewing device (1) comprises a cup-shaped body (8) comprising a first portion (13) and a second portion (16) defining therebetween a seat (AB) designed to receive the capsule (2) during the movement of the cup-shaped body (8) towards said closing position; the second portion (16) is designed to slide with respect to the first portion (13) between a smaller seat position, in which the seat (AB) is sized to house a smaller capsule (2A), and a larger seat position, in which the seat (AB) is sized to house a larger capsule (2B); actuating means (23) being provided to move the cup-shaped body (8) from the open position to the closing position, and vice versa; characterised in that the second portion (16) is mounted to normally take the smaller seat position and to move to the larger seat position during the movement of the cup-shaped body (8) towards the closing position as a result of the interaction with a larger capsule (2B); and in that the actuating means (23) are configured to keep the first portion (13) still in the closing position and comprise a blocking device (30) configured to define, in the closing position, a constraint to keep the second portion (16) still when the second portion (16) is in the normal smaller seat position.
2.根据权利要求1所述的冲泡装置(1)，其中，所述阻挡装置(30)通常布置在阻挡构造中，在所述阻挡构造中，所述阻挡装置能相对于所述第二部分(16)限定所述约束部，并且当所述杯形本体(8)朝向所述关闭位置移动期间，在所述第二部分(16)从所述较小座部位置移动到所述较大座部位置时，由于所述阻挡装置与所述第二部分(16)相互作用，所述阻挡装置能从所述阻挡构造移动到非阻挡构造。
The brewing device (1) according to claim 1, wherein the blocking device (30) is normally arranged in a blocking configuration, in which it is able to define said constraint with respect to the second portion (16) and is movable from the blocking configuration to an unblocking configuration as a result of the interaction with the second portion (16) when the second portion (16) moves from the smaller seat position to the larger seat position when the cup-shaped body (8) moves towards the closing position.
3.根据权利要求1或2所述的冲泡装置(1)，其中，所述致动装置(23)包括联动装置(23)，所述联动装置包括曲轴-连杆机构以使所述杯形本体(8)从所述关闭位置移开和移动到所述关闭位置；所述阻挡装置(30)安装在所述曲轴-连杆机构的连杆(26)上并且构造为在所述杯形本体(8)位于所述关闭位置中时形成轴向肩部，该轴向肩部被所述第二部分(16)接合，以防止所述第二部分(16)相对于所述第一部分(13)朝向所述第一部分(13)的底部轴向地移动。
The brewing device (1) according to claim 1 or 2, wherein the actuating means (23) comprise a linkage (23) comprising a crank-connecting rod mechanism to move the cup-shaped body (8) from and to the closing position; the blocking device (30) is mounted on a connecting rod (26) of the crank-connecting rod mechanism and is configured to form an axial shoulder engaged by the second portion (16) when the cup- shaped body (8) is in the closing position to prevent the second portion (16) from axially moving with respect to the first portion (13) towards the bottom of the first portion (13).
4.根据权利要求2或3所述的冲泡装置(1)，其中，所述第二部分(16)具有附件(20)，所述附件布置成：在所述杯形本体(8)朝向所述关闭位置移动期间，在所述第二部分(16)从所述较小座部位置移动到所述较大座部位置时，所述附件与所述阻挡装置(30)相互作用，因此，克服弹性装置(33)的作用而将所述阻挡装置(30)从通常的所述阻挡构造移动到所述非阻挡构造。
(16) has an appendix (20) arranged to interact with the blocking device (30) when the second portion (16) moves from the smaller seat position to the larger seat position during the movement of the cup-shaped body (8) towards the closing position, thus moving the blocking device (30) from the normal blocking configuration to the unblocking configuration against the action of the elastic means (33).
5.根据前述权利要求中任一项所述的冲泡装置(1)，其中，所述杯形本体(8)的所述第一部分(13)被定义为外杯(13)，所述外杯具有轴向对称轴线(5)并且设置有自由边缘(8E)；并且所述第二部分(16)被定义为与所述外杯(13)同轴的内杯(16)，所述内杯具有底壁(18)，并且能在所述外杯(13)内部在所述较小座部位置与所述较大座部位置之间轴向地滑动；所述座部(AB)所具有的深度能基于所述内杯(16)相对于所述外杯(13)的位置而变化并且等于所述外杯(13)的所述自由边缘(8E)与所述内杯(16)的所述底壁(18)之间的轴向距离。
The brewing device (1) according to any one of the preceding claims, wherein the first portion (13) of the cup-shaped body (8) is defined by an outer cup (13) having an axially symmetrical axis (5) and being provided with a free edge (8E); and the second portion (16) is defined by an inner cup (16), which is coaxial to the outer cup (13), has a bottom wall (18) and is axially slidable inside the outer cup (13) between said smaller seat position and said larger seat position; the seat (AB) having a depth that is variable based on the position of the inner cup (16) with respect to the outer cup (13) and is equal to an axial distance between the free edge (8E) of the outer cup (13) and the bottom wall (18) of the inner cup (16).
6.根据权利要求5所述的冲泡装置(1)，其中，所述第二部分(16)通过布置在所述外杯(13)与所述内杯(16)之间的弹性构件(19)来保持在通常的所述较小座部位置中。
The brewing device (1) according to claim 5, wherein the second portion (16) is kept in the normal smaller seat position by means of an elastic member (19) arranged between the outer cup (13) and the inner cup (16).
在各种实施例中，支架50可以由多于一个的零件制造。
In various embodiments, the bracket 50 may be fabricated of more than one part.
在各种实施例中，支架50可以由聚合物或其他材料制造。
In various embodiments, the bracket 50 may be fabricated of a polymer or other material.
参考图5，支架50被示出为安装到座椅靠背14的面板42。
With reference to FIG. 5, the bracket 50 is shown mounted to the panel 42 of the seatback 14.
横向构件46被示出为布置在支架50的通道126中。
The cross member 46 is shown disposed in the channel 126 of the bracket 50.
如之前所解释的，第一凸缘174可包括用于接纳紧固件以将支架50固定到面板42的第一孔口182。
As previously explained, the first flange 174 may include a first aperture 182 for receiving a fastener for securing the bracket 50 to the panel 42.
第一凸缘174可包括用于将面板42的突出部接纳在支架50中的第一狭槽200。
The first flange 174 may include first slots 200 for receiving protrusions of the panel 42 in the bracket 50.
突出部和第一狭槽200可用于将第一凸缘174定位在面板42上。
The protrusions and the first slots 200 may be used to position the first flange 174 on the panel 42.
如之前所解释的，第二凸缘178可包括用于接纳紧固件以将支架50固定到面板42的第二孔口186。
As previously explained, the second flange 178 may include a second aperture 186 for receiving a fastener for securing the bracket 50 to the panel 42.
第二凸缘178可包括用于将面板42的突出部接纳在支架50中的第二狭槽204。
The second flange 178 may include second slots 204 for receiving protrusions of the panel 42 in the bracket 50.
突出部和第二狭槽204可用于将第二凸缘178定位在面板42上。
The protrusions and the second slots 204 may be used to position the second flange 178 on the panel 42.
参考图6，示出了横向构件46和支架50的横截面视图。
With reference to FIG. 6, a cross-sectional view of the cross member 46 and the bracket 50 is shown.
所述横截面视图可以是沿着图5的线VI-VI截取的。
The cross-sectional view may be taken along line VI-VI of FIG. 5.
如前所述，横向构件46可以是中空管。
As previously discussed, the cross member 46 may be a hollow tube.
在一些示例中，支架50可以具有均匀的厚度t。
In some examples, the bracket 50 may have a uniform thickness t.
参考图7，示出了支架50和横向构件46的附加横截面视图。
With reference to FIG. 7, an additional cross-sectional view of the bracket 50 and the cross member 46 is shown.
所述横截面视图可以是沿着图7的线XII-XII截取的。
The cross-sectional view may be taken along line XII-XII of FIG. 7.
螺旋弹簧212可以布置成靠近第二附接点30。
A coiled spring 212 may be disposed proximate the second attachment point 30.
螺旋弹簧212可以向第二旋转锁定机构110提供弹簧偏置。
The coiled spring 212 may provide a spring bias to the second rotary locking mechanism 110.
支架50被示出为布置在面板42上。
The bracket 50 is shown disposed on the panel 42.
支架50的弯曲部分172可限定用于接纳横向构件46的凹槽(通道126)。
The curved portion 172 of the bracket 50 may define a recess (channel 126) for receiving the cross member 46.
参考图8，示出了座椅总成10的横截面示意图。
Referring to FIG. 8, a cross-sectional schematic view of the seating assembly 10 is shown.
如之前所解释的，支架50的弯曲部分172可限定用于接纳横向构件46的凹槽(通道126)。
As previously explained, the curved portion 172 of the bracket 50 may define a recess (channel 126) for receiving the cross member 46.
凹槽可以进一步由与第一屏蔽部分166和第二屏蔽部分170相切的线220和与弯曲部分172相切的线224来限定。
The recess may be further defined by a line 220 tangential to the first and second shielding portions 166, 170 and a line 224 tangential to the curved portion 172.
线224可以与U形横截面173的底部点相切。
The line 224 may be tangential to a bottom point of the U-shaped cross section 173.
在各种实施例中，横向构件46可在由乘员52使用座椅总成10期间避免与支架50接触。
In various embodiments, the cross member 46 may avoid contact with the bracket 50 during use of the seating assembly 10 by an occupant 52.
当座椅靠背14在至少直立位置A、倾斜位置B和在至少在直立位置A和倾斜位置B之间的间歇位置C之间移动时，则横向构件46可避免与支架50接触。
When the seatback 14 moves between at least an upright position A, a reclined position B, and intermittent positions C between at least an upright position A and a reclined position B, then the cross member 46 may avoid contact with the bracket 50.
通过使用本公开可以得到各种优点。
A variety of advantages may be derived from use of the present disclosure.
紧凑支架可利用座椅靠背中大致最小量的空间。
A compact bracket may utilize a generally minimal amount of space in a seatback.
支架的屏蔽部分可实现将横向构件与垫和其他座椅靠背零件屏蔽的目的。
The shielding portions of the bracket may achieve the goal of shielding the cross member from cushions and other seatback parts.
支架的屏蔽部分可以屏蔽横向构件并且部分地包围横向构件。
The shielding portions of the bracket may shield the cross member and partially surround the cross member.
支架可在提供乘员舒适度的同时保持乘员H点。
The bracket may maintain an occupant H-point while providing an occupant comfort.
支架的尺寸可以设计成在支架和乘员之间提供用于接纳垫的空间，所述垫可以最小化乘员感受到支架的可能性。
The bracket may be sized to provide a space between the bracket and the occupant for receipt of a cushion that may minimize the likelihood that the occupant may feel the bracket.
应当理解，可以在不脱离本公开的概念的情况下对前述结构做出变动和修改，并且还应当理解，除非随附权利要求用其语言明确表明另外的情况，否则这些概念意图由这些权利要求涵盖。
It is to be understood that variations and modifications can be made on the afore-mentioned structure without departing from the concepts of the present disclosure, and further it is to be understood that such concepts are intended to be covered by the following claims unless these claims by their language expressly state otherwise.
玻璃纤维3在经过树脂硬化装置65后，通过引导辊75进行方向转换，最终卷绕于卷绕线轴4。
After the glass fiber 3 passes through the resin curing device 65, the glass fiber 3 is redirected by the guide roller 75, and is finally wound by the winding bobbin 4.
此外，玻璃纤维3在从玻璃母材2拉丝出后，直至通过引导辊75进行方向转换为止，向铅垂方向下方行进。
Note that, after the glass fiber 3 is drawn from the glass preform 2, the glass fiber 3 travels downward in the vertical direction until the glass fiber 3 is redirected by the guide roller 75.
另外，玻璃纤维3在拉丝炉10和冷却装置20之间，暴露于外部气体。
The glass fiber 3 is exposed to outside air between the drawing furnace 10 and the cooling device 20.
如果不暴露于外部气体而从拉丝炉10至冷却装置20为止将玻璃纤维3的通路与外部气体遮断，则热风从拉丝炉10流入冷却装置20，通过冷却装置20冷却玻璃纤维3的能力显著地降低。
If a path of the glass fiber 3 from the drawing furnace 10 to the cooling device 20 is shut off from outside air, and the glass fiber 3 is not exposed to outside air, hot air would flow from the drawing furnace 10 into the cooling device 20.
在将玻璃纤维3引入冷却装置20的壳体23的内部时，有时外部气体与玻璃纤维3一起被吸入壳体23的内部。
When the glass fiber 3 is led into the casing 23 of the cooling device 20, outside air may be carried along with the glass fiber 3 into the casing 23.
玻璃纤维3的行进速度越快，外部气体越容易被吸入壳体23的内部。
As the drawing speed of the glass fiber 3 increases, outside air is more readily carried into the casing 23.
特别是如果玻璃纤维3的行进速度1000m/分钟以上，则外部气体容易被吸入壳体23的内部。
In particular, when the drawing speed of the glass fiber 3 is 1000 m/min or more, outside air is readily carried into the casing 23.
此外，玻璃纤维3的行进速度例如为600m/分钟～2500m/分钟。
The drawing speed of the glass fiber 3 is 600 m/min to 2500 m/min, for example.
外部气体是包含水蒸气的空气，外部气体的露点高于冷却筒21的温度。
The dew point of outside air is higher than the temperature of the cooling tube 21.
因此，如果外部气体与玻璃纤维3一起被吸入冷却筒21的光纤通路22，则水蒸气被吸入光纤通路22。
Therefore, when outside air is carried along with the glass fiber 3 into the fiber path 22 of the cooling tube 21, water vapor is carried into the fiber path 22.
本发明人对玻璃纤维3断线的原因进行了研究，查明其原因是，以往对壳体23内的露点进行测定的位置不适当，超过根据露点的测定值设想的量的水蒸气被吸入光纤通路22。
The inventors of the present invention investigated the cause of the breakage of a glass fiber, and found that the breakage of the glass fiber occurs because a dew point measurement position within a casing is not appropriate, and thus, the amount of water vapor, exceeding an amount expected from the measured dew point, is carried into a fiber path.
以往，对壳体23内的露点进行测定的地点(在图1中由白圈表示的地点101P)处于冷却筒21的旁边且远离玻璃纤维3。
In the related-art, a dew point measurement position (such as a point 101P indicated by a white circle in FIG. 1 ) in a casing is located beside a cooling tube and is far away from a glass fiber.
因此，以往超过根据露点的测定值设想的量的水蒸气被吸入光纤通路22。
Therefore, in the related-art, the amount of water vapor, exceeding an amount expected from the measured dew point, may be carried into a fiber path.
其原因在于外部气体被吸入玻璃纤维3的现象在玻璃纤维3的附近发生。
This is because outside air in the vicinity of the glass fiber is carried along with the glass fiber into the fiber path.