mwirth-epo/epo-nmt-datasets huggingface dataset:
以上利用各种实施方式对本发明进行了说明，但是，当然本发明的技术范围并不限定于上述实施方式记载的范围。
The present invention was explained above using various embodiments, but it need not be mentioned that the technical scope of the present invention is not limited to the scope described in the above embodiments.
对于本领域技术人员而言，明确可知对于上述实施方式可以施加多种变更或改良。
It is clear to a person skilled in the art that it is possible to add various modifications or improvements to the above embodiments.
另外，根据权利要求书的记载明确可知，本发明的技术范围中可以包含这种施加了变更或改良的方式。
Further, it is clear from the recitations of the claims that aspects in which such modifications or improvements are added are included in the technical scope of the present invention.
1b：毛状体。
1 Hairlike bodies and underlayer 1a Underlayer 1b Hairlike bodies d Diameter of the hairlike bodies h Height of the hairlike bodies t Spacing of the hairlike bodies 2 Sealant resin layer 3 Substrate layer
将浓度为3％(重量)的光引发剂以及共引发剂Esacure EDB(IGM Resins B.V.)溶解在由Ebecryl 605和Ebecryl 350(Allnex)组成的99.5：0.5混合物中，制备可光聚合组合物。
The photopolymerizable compositions for the test were prepared dissolving the photoinitiators and the co-initiator, Esacure EDB (IGM Resins B.V.), at a concentration of 3% by weight (wt) each in a mixture 99.5:0.5 wt of Ebecryl 605 and Ebecryl 350 (Allnex).
将放置在FT-IR(FT-IR 430-Jasco)样品舱中的可光聚合组合物暴露于两种不同来源：
The photopolymerizable compositions placed in the sample lodgment of a FT-IR (FT-IR 430-Jasco), were exposed to two different sources: 1) a LED source (400 nm) located at a distance of 25 mm from the sample and at an angle of 30°.
1)LED光源(400nm)，该光源与样品的距离为25mm，角度为30°(表1)；
(Table 1) 2) A Mercury lamp (160 W) located at a distance of 65 mm from the sample and at an angle of 30°.
2)水银灯(160W)，该光源与样品的距离为65mm，角度为30°(表2)。
(Table 2)
在光聚合过程中每隔恒定的时间间隔获取IR光谱，使用IR软件确定丙烯酸双键的峰面积在1408cm-1和810cm-1处随时间而减少。
IR spectra were acquired at constant time intervals during the photopolymerization and the reduction over the time of the area of the peaks at 1408 and 810 cm−1assigned to the acrylic double bonds was determined using the IR software.
该数据量化了聚合度，从而量化了光引发剂的效率。
This allows quantifying the degree of polymerization and therefore the efficiency of the photoinitiator.
在400nm处的结果以相对于时间的聚合百分比表示，列于下表1中，采用水银灯的试验结果列于表2中。
The results at 400 nm, expressed as % of polymerization over the time, are reported in Table 1 and the results with the Mercury lamp are reported in Table 2.
将浓度各为5.0％(重量)的光引发剂以及共引发剂Esacure EDB溶解在用于喷墨打印的青色油墨中，制备用于本分析试验的可光聚合组合物。
The photopolymerizable compositions for the test were prepared by dissolving the photoinitiators and the co-initiator Esacure EDB at a concentration of 5.0% wt each in a cyan ink for ink-jet printing.
将放置在FT-IR(FT-IR 430-Jasco)样品舱中的可光聚合组合物暴露于两种不同光源：
The photopolymerizable compositions placed in the sample lodgment of a FT-IR (FT-IR 430-Jasco), were exposed to two different sources: 1) a LED source (400 nm) located at a distance of 25 mm from the sample and at an angle of 30°.
1)LED光源(400nm)，该光源与样品的距离为25mm，角度为30°(表3)；
(Table 3) 2) A Mercury lamp (160 W) located at a distance of 65 mm from the sample and at an angle of 30°.
2)水银灯(160W)，该光源与样品的距离为65mm，角度为30°(表4)。
(Table 4)
在光聚合过程中每隔恒定的时间间隔获取IR光谱，使用IR软件确定丙烯酸双键的峰面积在1408cm-1和810cm-1处随时间而减少。
IR spectra were acquired at constant time intervals during the photopolymerization and the reduction over the time of the area of the peaks at 1408 cm−1and 810 cm−1assigned to the acrylic double bonds was determined using the IR software.
在400nm处的结果以相对于时间的聚合百分比表示，列于下表3中，采用水银灯的试验结果列于表4中。
The results at 400 nm, expressed as % of polymerization over the time, are reported in Table 3 and the results with the Mercury lamp are reported in Table 4.
这些试验证实，通式(I)的化合物相对于对比化合物(COMP-1和COMP-2)具有更高的反应性。
These tests confirm that compounds of Formula (I) are more reactive than the comparatives (COMP-1 and COMP-2).
反应性测试可聚合化合物与单分子
Reactivity Tests Polymerizable Compounds Versus Single Molecules
如实施例10.1.1和10.1.2所述那样制备可光聚合组合物。
The photopolymerizable compositions were prepared as reported in the examples 10.1.1. and 10.1.2.
然后将它们放置在FT-IR(FT-IR 430-Jasco)样品舱中的可光聚合组合物暴露于LED光源(400nm)，该光源与样品的距离为25mm，角度为30°(表5)。
Then they were placed in the sample lodgment of a FT-IR (FT-IR 430-Jasco), were exposed to a LED source (400 nm) located at a distance of 25 mm from the sample and at an angle of 30°.
这允许量化了聚合度，从而量化了光引发剂的效率。
This allows quantifying the degree of polymerization and therefore the efficiency of the photoinitiator.
在400nm处的结果以相对于时间的聚合百分比表示，列于下表5中。
The results at 400 nm, expressed as % of polymerization over the time, are reported in Table 5.
使用Omnipol 3TX(IGM Resins B.V.)(COMP-1)、Omnirad ITX(2-异丙基噻吨酮，IGM Resins BV)(COMP-3)和按照EP2909243的实施例10描述的方法制备现有技术的3-香豆素酮(COMP-4)作为参考化合物。
(COMP-1), Omnirad ITX (2-isopropyl thioxanthone, IGM Resins B.V.)
从以上结果清楚地看出，实施例6的新颖的可聚合香豆素酮与参考化合物(COMP-4)几乎具有相同的反应性，事实上，在透明系统中反应性仅降低了12％，而在着色系统中则降低了5％。
From the results above is clear that the new polymerizable ketocoumarin of Example 6 is almost reactive as the reference compound (COMP-4) in fact the reactivity is reduced only of 12% in clear system and of 5% in pigmented system.
这是完全出乎意料的，因为在文献中总是描述当光引发剂结构上存在丙烯酸酯化部分时反应性大大降低，作为例子，本发明人将Omnirad ITX(COMP-3)与Omnipol 3TX(COMP-1)(丙烯酸酯化的Omnirad ITX)进行了比较，从表5中可以估算出，在透明系统中反应活性降低了35％，在有色系统中反应活性降低了48％，即观察到实施例6的可聚合化合物的活性降低了三倍到差不多十倍。
This is completely unexpected because in literature are always described strong reduction of reactivity when acrylated moieties are present on photoinitiator structures, as example we compared Omnirad ITX (COMP-3) with Omnipol 3TX (COMP-1) (acrylated version of Omnirad ITX) and from Table 5 we can estimated a reduction of reactivity of the 35% in clear system and of the 48% in pigmented system, that is from tree times to almost ten times the reduction observed for the polymerizable compound of Example 6.
根据表6制备了可辐射固化组合物(INV-1、INV-2和INV-3)。
The radiation curable compositions (INV-1, INV-2 and INV-3) were prepared according to Table 6.
重量百分比(wt％)基于可辐射固化组合物的总重量。
The weight % (wt %) was based on the total weight of the radiation curable composition.
使用棒式涂料机和10μm线棒将可辐射固化组合物INV-1、INV-2和INV-3涂布在PE基材上。
The radiation curable composition INV-1, INV-2 and INV-3 were coated on a PE substrate using a bar coater and a 10 μm wired bar.
使用配备有水银灯(240W)的Fusion DRSE-120Q/QNL和配备有395nm(16W/cm2)LED灯的Phoseon固化每个涂层样品。
Each coated sample was cured using a Fusion DRSE-120 Q/QNL, equipped with an Hg lamp (240 W) and with a Phoseon equipped with an LED lamp 395 nm (16 W/cm2).
固化速度如表7所示。
The curing speed is shown in Table 7.
将7.068cm2INV-1、INV-2和INV-3样品放入50ml烧杯中，并用4.5ml乙腈超声提取30分钟。
The samples of 7.068 cm2of INV-1, INV-2 and INV-3 were put into a 50 ml beaker and extracted with 4.5 ml acetonitrile, using ultrasound for 30 minutes.
将提取物转移到5ml容量瓶中。
The extract was transferred into a 5 ml volumetric flask.
将样品用少量乙腈冲洗两次，然后将冲洗溶剂转移到5ml容量瓶中，直到将体积调节至5ml。
The samples were rinsed twice with a small amount of acetonitrile and the rinsing solvent was transferred into the 5 ml volumetric flask until the volume was adjusted to 5 ml.
将溶液充分混合，并通过0.45μm过滤器过滤。
The solution was thoroughly mixed and filtered over a 0.45 μm filter.
每个样品取10μl注入HPLC。
10 μl of each sample was injected on the HPLC.
洗脱条件与提取条件相同，与已知浓度的引发剂的参考样品比较，以确定浓度。
The concentration was determined in comparison with a reference sample of a known concentration of the initiator, eluted under the same conditions as the extracted samples.
假定每个样品的总涂布重量为10g/m2。
A total coating weight of 10 g/m2was assumed for each sample.
在HPLC痕量分析中，没有检测到实施例3和实施例9有残留量。
In the HPLC trace no residue of Example 3 and Example 9 was detectable.
这说明根据本发明的优选实施例的可聚合光引发剂完全内置于网络中。
This illustrates that polymerizable photoinitiators according to a preferred embodiment of the present invention are completely built in to the network.
上述实验表明，迄今为止的文献公开的内容是可聚合光引发剂与相应的未聚合的香豆素酮相比，其活性显着地降低(例如，参见噻吨酮Omnipol 3TX(IGM Resins BV)(MW946.07g/mol)的活性比Omnirad ITX(IGM Resins BV)(MW 254.3g/mol)降低，其中在LED灯(400nm)的着色系统中降低48％)，与此相反的是，上述实施例6的可聚合香豆素酮(MW＞1000Da)在相同条件下活性仅降低5％(参见上述实施例10.1.3)。
The above experiments show that contrary to what it is disclosed hitherto in the literature, wherein polymerizable photoinitiators provided a significant reduction of the activity compared to the correspondent non-polymerized ketocoumarins, (see for instance the reduction of the activity for the thioxanthone Omnipol 3TX (IGM Resins BV) (MW 946.07 g/mol) compared to Omnirad ITX (IGM Resins BV) (MW 254.3 g/mol) which amounts to 48% in pigmented system under an LED lamp (400 nm)) the polymerizable ketocoumarins of Example 6 above (MW>1000 Da) show a reduction of only 5% in the same conditions (see Example 10.1.3 above).
本发明的光引发剂的多功能本质使每克官能度保持相对较高，并且相对较小的核分子量使得材料高度可溶于可光固化组合物，尤其是可光固化涂料组合物中。
The multifunctional nature of the photoinitiators of the invention keeps the functionality per gram relatively high and the relatively small core molecular weight renders the material highly soluble in photocurable compositions, especially in photocurable coating compositions.
此外，至少一个烯键式不饱和基团的存在保证了新颖化合物与可光固化组合物的其它单体共聚，从而阻止它们迁移和/或被提取。
Moreover, the presence of at least one ethylenically unsaturated group guarantees that the new compounds are copolymerized with the other monomer(s) of the photocurable composition, preventing them from migrating and/or being extracted.
其中，在工序III’中，成为与上述工序I同样进行较低速度的增速控制的第一增速区间，进行与上述比较例相比使主电路MOSFET 100的漏极电压的减少率增大的增速控制(但是，栅极电压基本恒定)。
Step III′ is a first speed-increase section, in which a comparatively low-speed speed-increase control is performed, similarly to step I. In the speed-increase control performed at step III′, the decrease rate of the drain voltage of the main circuit MOSFET 100 is larger than the rate in the comparative example (it is to be noted, however, that the gate voltage is approximately constant).
另外，在工序III”中，由于打开定时调整电路61的输出电压低于栅极阈值电压，并且也没有来自通电切换电路81的电流检测信号的加法运算，因此成为没有基于打开增速控制用MOSFET 41的增速控制的状态。
At step III″, the output voltage of the turn-ON timing adjustment circuit 61 is less than the gate threshold voltage, and no current detection signal from the conduction switch circuit 81 is added.
由此，在该工序III”中，与上述比较例同样地仅将基于栅极电阻31的电流施加给主电路MOSFET 100的栅极端子Gm，该工序III”以比作为第一增速区间的上述工序III’长的所需时间执行。
Under the circumstances, at step III″, the current applied to the gate terminal Gm of the main circuit MOSFET 100 is the current through the gate resistor 31 alone, similarly to the comparative example.
此处，工序III’的所需时间比上述比较例缩短，但另一方面，通过延长工序III”的所需时间，结果上在合并了工序III’和工序III”的漏极电压的减少变化期间Tv能够确保规定的最短时间，能够抑制在漏极电压的减少变化期间Tv整体中平均减少变化率dV/dt增大。
This eliminates or minimizes an increase in an average decrease change ratio of dV/dt in the decrease change period Tv of the chain voltage as a whole.
并且，为了设定从工序III’到工序III”的切换定时以使得以这种方式漏极电压的减少变化期间Tv能够确保在规定的最短时间以上，只要适当调整打开定时调整电路61的CR时间常数和栅极电阻31的电阻值的组合即可。
In order to set the switching timing at which to switch step III′ to step III″ while ensuring that the decrease change period Tv of the drain voltage is equal to or longer than the shortest period of time standard, it is possible to adjust the combination of the CR time constant of the turn-ON timing adjustment circuit 61 and the resistance value of the gate resistor 31 in any manner deemed convenient.
并且在工序IV中，与上述工序III”同样，成为没有基于打开增速控制用MOSFET 41的增速控制的状态，以与上述比较例中工序IV同等的所需时间和增加率增加主电路MOSFET100的栅极电压。
Step IV is in a state in which no speed-increase control is performed by the turn-ON speed-increase control MOSFET 41, similarly to step III″.
在如上所述的本实施方式的驱动电路1的打开序列中，与上述比较例相比，能够减少开关损耗的总量。
In the turn-ON sequence performed by the driving circuit 1 according to this embodiment with the above-described configuration, the total amount of switching loss decreases as compared with the comparative example.
具体而言，以工序II中漏极电流的增加变化期间Ti’(<Ti)被缩短的量减少其间开关损耗总量。
Specifically, the total amount of switching loss decreased is attributed to the shortening of the increase change period Ti′ (<Ti)of the drain current at step II.
另外，以工序III’和工序III”中漏极电压的增减变化曲线在减少方向以凹状弯曲的量减少其期间的开关损耗总量。
Also, the total amount of switching loss decreased is attributed to a depression found in the decrease portion of the increase-decrease change curve of the drain voltage at step III′ and step III″.
因此，与上述比较例的情况(参照图7中的虚线区域)相比，能够充分地削减合并了这些的整体的开关损耗总量(图7中的影线面积)。
The total amount of switching loss (the hatched area in FIG. 7 ) decreased by a combination of these factors is advantageously smaller than the total amount of switching loss in the comparative example (see the dotted line region in FIG. 7 ).
基于这样的本实施方式的增速控制的漏极电压增减变化期间Tv的维持和序列整体中开关损耗总量的削减效果也能够同样在关闭序列中得到。
Thus, in the speed-increase control according to this embodiment, the increase-decrease change period Tv of the drain voltage is maintained, and the total amount of switching loss is decreased in a sequence as a whole.
图8示出仅仅提取了上述图2所示的本实施方式的驱动电路1之中与关闭控制对应地发挥功能的部分的部分电路图，图9示出其关闭序列的时序图。
FIG. 8 is a partial circuit diagram illustrating those parts, among the driving circuit 1 according to this embodiment illustrated in FIG. 2, that function in the turn-OFF control.
此外，该关闭控制时的增速控制是指，进行关闭增速控制用MOSFET 42针对主电路MOSFET 100的栅极端子Gm放电什么程度的操作。
In the speed-increase control in the case of the turn-OFF control, the turn-OFF speed-increase control MOSFET 42 operates to determine the extent to which the gate terminal Gm of the main circuit MOSFET 100 is to be discharged.
在图9所示的时序图中，在控制信号从H电平切换为L电平并开始该关闭序列后，经过工序IV→工序III”→工序III’→工序II→工序I的相反顺序而执行。
In the time chart illustrated in FIG. 9, the steps proceed in inverse order of step IV→step III″→step III′→step II→step I, after the control signal is switched from H level to L level and the turn-OFF sequence starts.
并且，在工序IV和工序III”中不进行增速控制，在工序III’中成为进行较低速度的增速控制的第一增速区间，在工序II中成为进行较高速度的增速控制的第二增速区间，在工序I成为进行较低速度的增速控制的第一增速区间。
At step IV and step III″, no speed-increase control is performed; step III′ is a first speed-increase section, in which a comparatively low-speed speed-increase control is performed; step II is a second speed-increase section, in which a comparatively high-speed speed-increase control is performed; and step I is a first speed-increase section, in which a comparatively low-speed speed-increase control is performed.
由此，能够通过合并了工序III”和工序III’的漏极电压的增加变化期间Tv来确保规定的最短时间的同时，与上述比较例相比，能够充分地削减合并了工序III”、工序III’以及工序II的整体的开关损耗的总力。
This ensures that the increase change period, Tv, of the drain voltage at step III″ and step III′ combined meets the shortest period of time standard, and that the total amount of switching loss at step III″, step III′, and step II combined is advantageously decreased as compared with the comparative example.
图10示出基于本实施方式的驱动电路1的控制流程。
FIG. 10 illustrates a flow of control executed by the driving circuit 1 according to this embodiment.
该图10所示的流程图是示出在视为通过该驱动电路1中的各部的功能逐次处理基于上述图1所示的驱动电路1的主电路MOSFET 100的驱动方法时的处理顺序的图。
The flowchart illustrated in FIG. 10 shows a processing procedure for the method for driving the main circuit MOSFET 100 performed by the driving circuit 1 illustrated in FIG. 1 under the assumption that the elements of the driving circuit 1 perform their functions successively.
首先，在步骤ST10中，驱动电压切换部2根据控制信号的变化而进行切换并输出驱动电压。
First, at step ST 10, the driving voltage switching device 2 switches the driving voltage based on a change in the control signal, and outputs the switched driving voltage.
接着，进入步骤ST20，对栅极端子Gm施加栅极电压，以使得低速控制部3使主电路MOSFET 100的栅极电压以低速进行增减变化。
Next, the procedure proceeds to step ST 20, where the low-speed control device 3 applies the gate voltage to the gate terminal Gm to make an increase-decrease change in the gate voltage of the main circuit MOSFET 100 at a low speed.
接着，进入步骤ST30，增速切换部5对有无基于增速控制部4的增速控制和增速变化的大小进行切换，上述增速控制部4对基于上述低速控制部3的栅极电压的变化速度进行控制。
Next, the procedure proceeds to step ST 30, where the speed-increase switching device 5 switches between an execution and a non-execution of speed-increase control executed by the speed-increase control device 4, and switches the level of a speed-increase change caused by the speed-increase control.
然后，返回到上述步骤ST10，重复同样的顺序。
Then, the procedure returns to step ST 10 and starts from the beginning
如以上说明那样，本实施方式的半导体元件的驱动电路1包括：驱动电压切换部2，根据控制信号的变化，对所输出的驱动电压进行切换；低速控制部3，对其栅极端子Gm施加栅极电压，使得使主电路MOSFET 100的栅极电压以低速进行增减变化；增速控制部4，使基于低速控制部3的栅极电压的变化速度增大；以及增速切换部5，对有无基于增速控制部4的增速控制和增速变化的大小进行切换。
As has been described hereinbefore, the driving circuit 1 according to this embodiment for a semiconductor element includes: the driving voltage switching device 2, which based on a change in the control signal, makes a switching between driving voltages and outputs a driving voltage, among the driving voltages, that has been selected in the switching; the low-speed control device 3, which makes an increase-decrease change in the gate voltage of the main circuit MOSFET 100 at a low speed, and applies the gate voltage to the gate terminal Gm; the speed-increase control device 4, which executes a speed-increase control of increasing the speed of the increase-decrease change in the gate voltage made by the low-speed control device 3; and the speed-increase switching device 5, which switches between an execution and a non-execution of the speed-increase control executed by the speed-increase control device 4, and switches the level of a speed-increase change caused by the speed-increase control.
由此，能够通过低速模式和增速模式(第一增速区间、第二增速区间)的组合来设定控制信号的变化后的主电路MOSFET 100的漏极电流(主电流)和漏极电压(主端子间电压)的增减变化序列。
This configuration ensures that increase-decrease change sequences of the drain current (main current) and the drain voltage (inter-main-terminal voltage) of the main circuit MOSFET 100 after a change in the control signal can be set in the form of a combination of a low-speed mode and a speed-increase mode (the first speed-increase section and the second speed-increase section).
即，能够通过多种组合来设计漏极电流和漏极电压各自的时序增减变化曲线中的倾斜。
In other words, a time-series increase-decrease change curve of each of the drain current and the drain voltage can be designed to have various inclination combinations.
因此，即使将具有任意时序控制特性的主电路的半导体元件作为驱动对象，也能够设计漏极电流和漏极电压的增减变化序列，以使得根据其控制特性曲线和漏极电压的最低增减变化期间Tv来减少开关损耗的总量。
This configuration ensures that no matter which time-series control characteristics a driving-target semiconductor element of the main circuit has, the increase-decrease change sequences of the drain current and the drain voltage can be designed to decrease the total amount of switching loss based on the control characteristic curve of the semiconductor element and the minimum increase-decrease change period Tv of the drain voltage.
其结果为，能够确保切换时间的同时，可削减电力损耗。
This configuration, as a result, realizes a reduction in power loss while securing a sufficient period of switching time.
此外，关于驱动电路1作为驱动对象的主电路的半导体元件，不限于上述MOSFET，也可以将绝缘栅极双极晶体管(IGBT)和反相并联二极管的组合设为驱动对象。
It is to be noted that while the driving target of the driving circuit 1 is a semiconductor element of a main circuit, the driving target will not be limited to a MOSFET but may be a combination of an insulation gate bipolar transistor (IGBT) and an anti-parallel diode.
另外，在本实施方式中，特别地，增速切换部5具有定时调整部6，定时调整部6在从通过驱动电压切换部2切换驱动电压后经过了预定时间的切换定时，对有无基于增速控制部4的增速控制进行切换。
At a switching timing at which a predetermined period of time has passed since the driving voltage switching device 2 made the switching between driving voltages, the timing adjustment device 6 switches between the execution and the non-execution of the speed-increase control executed by the speed-increase control device 4.
由此，在主电路MOSFET 100中打开和关闭的任何切换序列中，也能够任意设计增减变化序列，以使得能够在以驱动电压的切换定时为基准的预定时间经过后的希望的定时，改变漏极电流和漏极电压的增减变化曲线的倾斜。
This configuration ensures that no matter which switching sequence the increase-decrease change sequence is (a turn-ON sequence or a turn-OFF sequence in the main circuit MOSFET 100), the increase-decrease change sequence can be designed in any manner deemed desirable such that the inclination of the increase-decrease change curves of the drain current and the drain voltage can be changed at an intended timing after a predetermined period of time has passed since a switching between driving voltages was made.
另外，在本实施方式中，特别地，切换定时被设定在主电路MOSFET 100中的漏极电压的增减变化期间Tv中。
In particular, in this embodiment, the switching timing is set as a timing during the increase-decrease change period Tv of the drain voltage in the main circuit MOSFET 100.
由此，在主电路MOSFET 100中打开和关闭的任何一者的切换序列中，也能够改变漏极电压的增减变化期间Tv中的增减变化曲线的倾斜，并能够任意设计漏极电压的增减变化序列，以使得确保切换时间的同时减少开关损耗总量。
This configuration ensures that no matter which switching sequence the increase-decrease change sequence is (a turn-ON sequence or a turn-OFF sequence in the main circuit MOSFET 100), the inclination of the increase-decrease change curve can be changed during the increase-decrease change period Tv of the drain voltage, and the increase-decrease change sequence of the drain voltage can be designed in any manner deemed desirable such that the total amount of switching loss is decreased while a sufficient period of switching time is secured.
另外，在本实施方式中，特别地，增速切换部5在打开主电路MOSFET 100的情况下，在切换定时将增速控制部4的增速控制从有切换为无。
In particular, in this embodiment, when the main circuit MOSFET 100 is turned ON, the speed-increase switching device 5 switches, at the switching timing, the speed-increase control executed by the speed-increase control device 4 from the execution to the non-execution.
由此，在打开的切换序列中，能够使漏极电压的减少变化期间Tv中的减少变化曲线的倾斜从急倾斜(低的增速模式：第二增速区间)改变为缓倾斜(低速模式)，并能够设计漏极电压的增减变化序列，以使得确保切换时间的同时减少开关损耗总量。
This configuration ensures that in the turn-ON switching sequence, the inclination of the decrease change curve in the decrease change period Tv of the drain voltage can be changed from steep inclination (low speed-increase mode: the second speed-increase section) to moderate inclination (low-speed mode), and the increase-decrease change sequence of the drain voltage can be designed such that the total amount of switching loss is decreased while a sufficient period of switching time is secured.
另外，在本实施方式中，特别地，增速切换部5在关闭主电路MOSFET 100的情况下，在切换定时将增速控制部4的增速控制从无切换为有。
In particular, in this embodiment, when the main circuit MOSFET 100 is turned OFF, the speed-increase switching device 5 switches, at the switching timing, the speed-increase control executed by the speed-increase control device 4 from the non-execution to the execution.
由此，在关闭的切换序列中，能够使漏极电压的增加变化期间Tv中的增加变化曲线的倾斜从缓倾斜(低速模式)改变为急倾斜(低的增速模式：第二增速区间)，并能够设计漏极电压的增减变化序列，以使得确保切换时间的同时减少开关损耗总量。
This configuration ensures that in the turn-OFF switching sequence, the inclination of the increase change curve in the increase change period Tv of the drain voltage can be changed from moderate inclination (low-speed mode) to steep inclination (low speed-increase mode: the second speed-increase section), and the increase-decrease change sequence of the drain voltage can be designed such that the total amount of switching loss is decreased while a sufficient period of switching time is secured.
另外，在本实施方式中，特别地，增速切换部5包括：通电检测部7，对漏极电流的增减变化状态(不是恒定状态而是增减变化的状态)进行检测；以及通电切换部8，当通电检测部7检测到漏极电流的增减变化状态时，进行切换以使得增大由增速控制部4进行的增速控制的增速变化(第二增速区间)。
In particular, in this embodiment, the speed-increase switching device 5 includes: the conduction detection device 7, which detects an increase-decrease change state of the drain current (an increasing or decreasing state, instead of a constant state); and the conduction switching device 8, which makes a switching, when the conduction detection device 7 has detected the increase-decrease change state of the drain current, to increase the speed-increase change (the second speed-increase section) in the speed-increase control executed by the speed-increase control device 4.
由此，能够在漏极电流的增减变化期间Ti’中进一步以增速变化大的增速模式(第二增速区间)使栅极电压进行增减变化，并能够设计漏极电流的增减变化序列以使得开关损耗总量变少。
This configuration ensures that the gate voltage can be increase-decrease changed in a speed-increase mode (second accelerated section) in which a still larger speed-increase change is made in the increase-decrease change period Ti′ of the drain current, and the increase-decrease change sequence of the drain current can be designed such that the total amount of switching loss is decreased.
另外，在本实施方式中，特别地，低速控制部3以栅极电阻31来安装，栅极电阻31限制对主电路MOSFET 100的栅极端子Gm的电流，以使得增速变化比由增速控制部4进行的增速控制时小。
The gate resistor 31 limits the current through the gate terminal Gm of the main circuit MOSFET 100 to make a speed-increase change smaller than the speed-increase change smaller in the speed-increase control executed by the speed-increase control device 4.
由此，能够廉价且功能性地安装低速控制部3。
This configuration ensures that the low-speed control device 3 is implemented cheaply and functionally.