mwirth-epo/epo-nmt-datasets huggingface dataset:
其中两个孔32、34相对于芯板18、20的基部28升高，并且形成在升高的凸台中，该凸台具有围绕孔32、34的平坦密封表面。
Two holes 32, 34 are raised with respect to the base portion 28 of the core plate 18, 20, and are formed in a raised boss which has a flat sealing surface surrounding the holes 32, 34.
另外两个孔36、38与板18、20的基部28共面或齐平。
The other two holes 36, 38 are co-planar or flush with the base portion 28 of the plate 18, 20.
两个升高的孔32、34布置在芯板18、20的相对两端处，并且两个齐平的孔36、38类似地布置在芯板18、20的相对两端。
The two raised holes 32, 34 are arranged at opposite ends of core plate 18, 20, and the two flush holes 36, 38 are similarly arranged at opposite ends of the core plate 18, 20.
一个芯板18或20中的升高的孔32、34与邻近的芯板18或20的平坦或共面的开口对齐，并且围绕升高的孔32、34的平坦密封表面密封抵靠围绕着邻近的芯板18或20的齐平的孔36、38的基部28的区域。
The raised holes 32, 34 in one core plate 18 or 20 align with the flat or co-planar openings of an adjacent core plate 18 or 20, with the flat sealing surface surrounding the raised holes 32, 34 sealing against the area of base portion 28 surrounding the flush holes 36, 38 of the adjacent core plate 18 or 20.
芯板18、20之间的这种接合使邻近的芯板18、20的基部28间隔开，由此限定交替的第一流体流动通路和第二流体流动通路24、26。
This engagement between the core plates 18, 20 spaces apart the base portions 28 of adjacent core plates 18, 20, thereby defining the alternating first and second fluid flow passages 24, 26.
每个流体流动通路24或26将具有由齐平的孔36、38限定的入口开口和出口开口，所述齐平的孔36、38与邻近芯板18、20的升高的孔32、34对齐。
Each fluid flow passage 24 or 26 will have inlet and outlet openings defined by the flush holes 36, 38, which are aligned with the raised holes 32, 34 of an adjacent core plate 18, 20.
如本领域中已知的，每个流体流动通路24、26可以设置有湍流器片40，以改善热传递。
Each fluid flow passages 24, 26 may be provided with a turbulizer sheet 40, to improve heat transfer, as is known in the art.
每个湍流器片40包括用于孔32、34、36、38的切口。
Each turbulizer sheet 40 includes cut-outs for the holes 32, 34, 36, 38.
每个湍流器片40的高度与其所在的流体流动通路24、26的高度大约相同，使得湍流器片40的顶表面和底表面与芯板18、20热接触，在芯板18、20之间限定了流体流动通路24、26。
The height of each turbulizer sheet 40 is about the same as the height of the fluid flow passage 24, 26 in which it is located, such that the top and bottom surfaces of the turbulizer sheet 40 are in thermal contact with the core plates 18, 20 between which the fluid flow passage 24, 26 is defined.
为了增强图6至9的截面图的清晰度，在这些附图中未示出湍流器片40。
To enhance clarity of the cross-sectional views of FIGS. 6-9, the turbulizer sheets 40 are not shown in these drawings.
替代地，作为在每个流体流动通路20、24中定位单独的湍流器片40的替代，如本领域中已知的，芯板18、20自身可以形成有热传递增强特征，诸如形成在芯板18、20的平面的基部28中的肋和/或凹坑等。
Alternatively, rather than having turbulizer sheets 40 positioned in each of the fluid flow passages 24, 26, the core plates 18, 20 may themselves may be formed with heat transfer augmentation features, such as ribs and/or dimples formed in the planar base portion 28 of the core plates 18, 20, as is known in the art.
芯板18、20中的孔32、34、36、38对齐以形成通过第一流体流动通路24联接在一起的第一歧管42和第二歧管44，以及通过第二流体流动通路26联接在一起第三歧管46和第四歧管48。
The holes 32, 34, 36, 38 in the core plates 18, 20 are aligned to form a first manifold 42 and a second manifold 44 coupled together by the first fluid flow passages 24, and a third manifold 46 and fourth manifold 48 coupled together by the second fluid flow passages 26.
取决于通过热交换器12的期望流动方向，第一歧管或第二歧管42、44可以是油进口歧管或油出口歧管，并且第三歧管或第四歧管46、48可以是冷却剂入口歧管或冷却剂出口歧管。
Either the first or second manifold 42, 44 may be the oil inlet manifold or the oil outlet manifold, and either the third or fourth manifold 46, 48 may be the coolant inlet manifold or the coolant outlet manifold, depending on the desired direction of flow through the heat exchanger 12.
而且，第一热传递流体在第一流体流动通路24中的流动方向可以与第二热传递流体在第二流体流动通路26中的流动方向相同(“并流”)或相反(“逆流”)。
Also, the flow direction of the first heat transfer fluid in the first fluid flow passages 24 may be the same (“co-flow”) or opposite (“counter-flow”) to the flow direction of the second heat transfer fluid in the second fluid flow passages 26.
顶板和底板50、52(在本文中也称为“端板”)封围热交换器12的芯部22。
Top and bottom plates 50, 52 (also referred to herein as “end plates”) enclose the core 22 of heat exchanger 12.
在下面对压力旁通阀组件进行讨论的前提下，顶板和底板50、52一起封闭每个歧管42、44、46、48的一端，并在歧管42、44、46、48的另一端提供导管开口。
Subject to the discussion of the pressure bypass valve assembly below, the top and bottom plates 50, 52 together close one end of each manifold 42, 44, 46, 48 and provide a conduit opening at the other end of the manifold 42, 44, 46, 48.
端板50、52中的导管开口的位置将取决于每个特定应用的要求，使得每个端板50、52将具有从零个到四个的导管开口，并且导管开口的总数为四个，即每个歧管42、44、46、48一个。
The locations of the conduit openings in end plates 50, 52 will depend upon the requirements of each particular application, such that each end plate 50, 52 will have from zero to four conduit openings, with the total number of conduit openings being four, i.e. one for each manifold 42, 44, 46, 48.
在本实施例中，顶板50具有两个导管开口54、56，它们为第一热传递流体(油)限定了入口开口和出口开口，且底板52具有两个导管开口58、60，它们为第二热传递流体(冷却剂)限定了入口开口和出口开口。
In the present embodiment, top plate 50 has two conduit openings 54, 56, which define inlet and outlet openings for the first heat transfer fluid (oil), while the bottom plate 52 has two conduit openings 58, 60, which define inlet and outlet openings for the second heat transfer fluid (coolant).
术语“顶部”和“底部”在本文中仅是为了方便起见，并且与图1和图2所示的热交换器组件10的定向一致。
The terms “top” and “bottom” are used herein for convenience only, and are consistent with the orientations of the heat exchanger assembly 10 shown in FIGS. 1 and 2.
然而，从这些术语的使用中不应意味着热交换器组件10在使用时需要具有任何特定的定向。
However, it should not be implied from the use of these terms that the heat exchanger assembly 10 is required to have any specific orientation when in use.
如图5所示，顶板50总体上具有与芯板18、20相同的形状，具有大致平面的基部28和倾斜的边缘壁30，并且其两个导管开口54、56与平面的基部28齐平并且与邻接的芯板18或20的两个齐平孔36、38对齐。
As shown in FIG. 5, the top plate 50 generally has the same shape as core plates 18, 20, having a generally planar base portion 28 and a sloping edge wall 30, and with its two conduit openings 54, 56 being flush with the planar base portion 28 and aligned with the two flush holes 36, 38 of the immediately adjacent core plate 18 or 20.
从图6至图8可以看出，顶板50可以比芯板18、20稍厚以增强热交换器12的刚度。
As can be seen from FIGS. 6-8, the top plate 50 may be somewhat thicker than core plates 18, 20 to enhance rigidity of the heat exchanger 12.
而且，顶板50的平面基部28可以比芯板18、20的平面基部28略大，使得紧邻的芯板18或20嵌套在顶板50内，并且其平面基部28密封地接合顶板50的平面基部28。
Also, planar base portion 28 of top plate 50 may be slightly larger than the planar base portions 28 of core plates 18, 20, such that the immediately adjacent core plate 18 or 20 nests within the top plate 50 with its planar base portion 28 sealingly engaging the planar base portion 28 of top plate 50.
因此，顶板50构造成允许第一热传递流体(油)通过其在热交换器12顶部处的两个导管开口54、56进入和离开热交换器12的第一歧管42和第二歧管44，同时顶板50的平面基部28密封第三歧管和第四歧管46、48的顶端。
Thus, the top plate 50 is configured to permit the first heat transfer fluid (oil) to enter and exit the first and second manifolds 42, 44 of heat exchanger 12 through its two conduit openings 54, 56 at the top of the heat exchanger 12, while the planar base portion 28 of top plate 50 seals the top ends of the third and fourth manifolds 46, 48.
如下面将进一步讨论的，热阀集成单元14安装在顶板50的顶(外)表面所提供的表面上。
As will be further discussed below, the top (outer) surface of top plate 50 provides a surface on which the thermal valve integration unit 14 is mounted.
在一些实施例中，顶板50的顶表面可以设置有被插入到热阀集成单元14的一对油端口中的配件，然而，在本实施例中，顶板50没有设置这种配件。
In some embodiments, the top surface of top plate 50 may be provided with fittings which are inserted into a pair of oil ports of the thermal valve integration unit 14, however, in the present embodiment, the top plate 50 is not provided with such fittings.
底板52具有与芯板18、20总体上相同的形状，具有总体上平面的基部28和倾斜的边缘壁30，并且具有与平面的基部28齐平的两个导管开口58、60。
The bottom plate 52 has generally the same shape as core plates 18, 20, having a generally planar base portion 28 and a sloping edge wall 30, and with two conduit openings 58, 60 being flush with the planar base portion 28.
当底板52的倾斜边缘壁30与紧邻的芯板18或20的倾斜边缘壁30嵌套时，导管开口与紧邻的芯板18或20的两个齐平孔36、38成对齐的间隔关系，并且底板52的平面的基部28密封地接合到围绕紧邻的芯板18或20的升高的孔32、34的密封表面。
When the sloping edge wall 30 of bottom plate 52 is nested with the sloping edge wall 30 of the immediately adjacent core plate 18 or 20, the conduit openings are in aligned spaced relation with the two flush holes 36, 38 of the immediately adjacent core plate 18 or 20, and the planar base portion 28 of the bottom plate 52 is sealingly engaged to the sealing surfaces surrounding the raised holes 32, 34 of immediately adjacent core plate 18 or 20.
这样就在底板52的平面基部28和紧邻的芯板18或20之间产生了空间(间隔)。
This creates a space between the planar base portion 28 of the bottom plate 52 and the immediately adjacent core plate 18 or 20.
该空间(间隔)限定了第二流体流动通路26，并且可以设置有湍流器片40，如图4中所示。
This space defines a second fluid flow passage 26, and may be provided with a turbulizer sheet 40, as shown in FIG. 4.
因此，底板52构造成允许第二热传递流体(冷却剂)通过在热交换器12底部处的两个导管开口58、60进入和离开热交换器12的第三歧管和第四歧管46、48。
Thus, the bottom plate 52 is configured to permit the second heat transfer fluid (coolant) to enter and exit the third and fourth manifolds 46, 48 of heat exchanger 12 through two conduit openings 58, 60 at the bottom of the heat exchanger 12.
在本实施例中，底板52的平面基部28没有完全阻塞或密封第一歧管和第二歧管42、44的底端。
In the present embodiment, the planar base portion 28 of bottom plate 52 does not completely block or seal the bottom ends of the first and second manifolds 42, 44.
相反，底板52的平面底部28包括一对齐平的旁通孔62、64，它们与紧邻的芯板18或20的升高的孔32、34对齐，从而提供与第一歧管和第二歧管42、44的流体连通。
Rather, the planar base portion 28 of bottom plate 52 includes a pair of flush bypass holes 62, 64 which are aligned with the raised holes 32, 34 of the immediately adjacent core plate 18 or 20, so as to provide fluid communication with the first and second manifolds 42, 44.
旁通孔62、64可以可选地小于邻近芯板18、20的升高的孔32、34，但不是必须如此。
The bypass holes 62, 64 may optionally be smaller than the raised holes 32, 34 of adjacent core plate 18, 20, but not necessarily so.
热交换器组件10还包括在旁通孔62、64之间提供流体连通的旁通流动通路66，该旁通流动通路66在热交换器芯22外部。
The heat exchanger assembly 10 further comprises a bypass flow passage 66 which provides fluid communication between the bypass holes 62, 64, external to the heat exchanger core 22.
就这点而言，旁通流动通路66包括细长的通道或肋68，该细长通道68设置在底板52的平面的基部28的外(底部)表面上。
In this regard, the bypass flow passage 66 comprises an elongate channel or rib 68 which is provided on the outer (bottom) surface of the planar base portion 28 of the bottom plate 52.
细长通道68被平面密封凸缘70围绕，该凸缘70围绕并封闭两个旁通孔62、64，从而形成密封的流动通路，以在芯22的外部、在两个旁通孔62、64之间承载第一热传递流体(油)。
The elongate channel 68 is surrounded by a planar sealing flange 70 which surrounds and encloses the two bypass holes 62, 64, so as to form a sealed flow passage to carry the first heat transfer fluid (oil) between the two bypass holes 62, 64 outside the core 22.
在本实施例中，平面密封凸缘70为具有平面的基部72的板结构的形式，基部72的尺寸和形状设计成能装配在底板52的倾斜边缘壁30内，以及平放抵靠且密封至底板52的平坦底部28。
In the present embodiment, the planar sealing flange 70 is in the form of a plate structure having a planar base portion 72 which is sized and shaped to fit within the sloping edge walls 30 of the bottom plate 52, and to lie flat against and seal to the planar base portion 28 of bottom plate 52.
细长通道68呈设置在密封凸缘70的平面基部72中的浮突的形式。
The elongate channel 68 is in the form of an embossment provided in the planar base portion 72 of sealing flange 70.
因为密封凸缘70的平面基部72具有与底板52的平面基部28基本上相同的尺寸和形状，所以密封凸缘70的平面基部72还设有一对与底板52的导管开口58、60对齐的导管开口74、76，从而提供与第三歧管和第四歧管46、48的流体连通。
Because the planar base portion 72 of sealing flange 70 has substantially the same size and shape as the planar base portion 28 of bottom plate 52, the planar base portion 72 of sealing flange 70 is also provided with a pair of conduit openings 74, 76 which are aligned with the conduit openings 58, 60 of the bottom plate 52, so as to provide fluid communication with the third and fourth manifolds 46, 48.
如图所示，导管开口74、76可以分别被直立的环形密封圈78围绕。
As shown, the conduit openings 74, 76 may each be surrounded by an upstanding, annular sealing collar 78.
密封圈78适于装配在管状配件80、82的基部以内并与该基部形成密封连接，第二流体(冷却剂)通过该密封圈78件进入并离开热交换器12。
The sealing collars 78 are adapted to fit within and form sealed connections with the base portions of tubular fittings 80, 82, through which the second fluid (coolant) enters and leaves the heat exchanger 12.
管状配件80、82构造成用于连接至车辆冷却液循环系统中的软管或管(未显示)。
The tubular fittings 80, 82 are configured for connection to hoses or tubes (not shown) in the vehicle's coolant circulation system.
应理解的是，不是必需在所有实施例中都必须在密封凸缘70上设置密封圈78。
It will be appreciated that the provision of sealing collars 78 on sealing flange 70 is not essential in all embodiments.
例如，导管开口74、76可以是简单的齐平孔，并且配件80、82可以各自设置有平的密封凸缘以便密封抵靠在密封凸缘70的外表面上。
For example, the conduit openings 74, 76 may be simple flush holes, and the fittings 80, 82 may each be provided with flat sealing flanges to seal against the outer surface of the sealing flange 70.
同样，在一些实施例中，密封凸缘70可以不延伸超过底板52的导管开口58、60，在这种情况下，配件80、82将直接密封地结合到底板52的外表面。
Also, in some embodiments, the sealing flange 70 may not be extended over the conduit openings 58, 60 of bottom plate 52, in which case the fittings 80, 82 will be sealingly joined directly to the outer surface of the bottom plate 52.
本发明实施例涉及半导体制造领域，尤其涉及一种半导体结构及其形成方法。
Embodiments and implementations of the present disclosure relate to the field of semiconductor manufacturing, and in particular to a semiconductor structure and a method for forming the same.
在半导体制造中，随着超大规模集成电路的发展趋势，集成电路特征尺寸持续减小，为了适应更小的特征尺寸，金属-氧化物-半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET)的沟道长度也相应不断缩短。
In order to adapt to a smaller characteristic size, a channel length of a metal-oxide-semiconductor field-effect transistor (MOSFET) is also reduced.
然而，随着器件沟道长度的缩短，器件源区与漏区间的距离也随之缩短，因此栅极结构对沟道的控制能力随之变差，栅极电压夹断(pinch off)沟道的难度也越来越大，使得亚阈值漏电(subthreshold leakage)现象，即所谓的短沟道效应(short-channel effects，SCE)更容易发生。
As a result, the ability of a gate structure to control a channel becomes poor, and the difficulty for gate voltage to pinch off the channel becomes increasingly great, which makes subthreshold leakage, i.e., the so-called short-channel effects (SCE), more likely to occur.
因此，为了减小短沟道效应的影响，半导体工艺逐渐开始从平面MOSFET向具有更高功效的三维立体式的晶体管过渡，如鳍式场效应晶体管(FinFET)。
Therefore, to reduce the influence of short-channel effects, semiconductor technology has gradually begun to transit from planar MOSFETs to three-dimensional transistors with higher effects, such as fin field effect transistors (FinFETs).
FinFET中，栅极结构至少可以从两侧对超薄体(鳍部)进行控制，与平面MOSFET相比，栅极结构对沟道的控制能力更强，能够很好的抑制短沟道效应；且FinFET相对于其他器件，与现有集成电路制造具有更好的兼容性。
Compared with the planar MOSFET, the gate structure has a stronger ability to control the channel and can suppress the short-channel effects very well.
本发明实施例解决的问题是提供一种半导体结构及其形成方法，来优化半导体结构的性能。
To address the problem, embodiments and implementations of the present disclosure provide a semiconductor structure and a method for forming the same to optimize the performance of the semiconductor structure.
为解决上述问题，本发明实施例提供一种半导体结构的形成方法，包括：提供基底，所述基底包括衬底、位于所述衬底上的栅极结构、位于所述栅极结构两侧所述衬底中的源漏掺杂区以及位于所述源漏掺杂区上的层间介质层；刻蚀所述层间介质层，形成露出所述源漏掺杂区的开口；在所述开口露出的所述源漏掺杂区顶部形成第一掺杂区和位于所述第一掺杂区上的第二掺杂区，所述第二掺杂区在基底上的投影覆盖所述第一掺杂区在所述基底上的投影，且所述第一掺杂区、第二掺杂区以及源漏掺杂区的掺杂离子类型相同，所述第一掺杂区和第二掺杂区的掺杂离子浓度均大于所述源漏掺杂区的掺杂离子浓度；形成所述第二掺杂区后，刻蚀所述开口底部的第一掺杂区和第二掺杂区，形成由第一掺杂区和第二掺杂区围成的沟槽；在所述开口和沟槽中形成接触孔插塞。
In one form, the present disclosure provides a method for forming a semiconductor structure, including: providing a base, the base including a substrate, a gate structure over the substrate, a source-drain doped region in the substrate on two sides of the gate structure, and an interlayer dielectric layer over the source-drain doped region; etching the interlayer dielectric layer to form an opening that exposes the source-drain doped region; forming a first doped region at a top of the source-drain doped region exposed by the opening and a second doped region over the first doped region, where a projection of the second doped region on the base covers a projection of the first doped region on the base, doping ion types of the first doped region, the second doped region and the source-drain doped region are the same, and an ion doping concentrations of the first doped region and the second doped region are higher than an ion doping concentration of the source-drain doped region; after forming the second doped region, etching the first doped region and the second doped region at a bottom of the opening to form a groove surrounded by the first doped region and the second doped region; and forming a contact hole plug in the opening and the groove.
相应的，本发明实施例还提供一种半导体结构，包括：基底，所述基底包括衬底、位于所述衬底上的栅极结构、位于所述栅极结构两侧所述衬底中的源漏掺杂区以及位于所述源漏掺杂区上的层间介质层；接触孔插塞，位于所述源漏掺杂区中，且所述源漏掺杂区覆盖所述接触孔插塞的部分侧壁；第一掺杂区，位于所述源漏掺杂区中，且位于所述接触孔插塞的底部与源漏掺杂区之间，所述第一掺杂区的掺杂离子类型与源漏掺杂区的掺杂离子类型相同，且第一掺杂区的离子掺杂浓度高于所述源漏掺杂区的离子掺杂浓度；第二掺杂区，位于所述源漏掺杂区中，且位于所述第一掺杂区上，所述第二掺杂区的掺杂离子类型与源漏掺杂区的掺杂离子类型相同，第二掺杂区的离子掺杂浓度高于所述源漏掺杂区的离子掺杂浓度，所述第二掺杂区覆盖所述接触孔插塞的部分侧壁，且所述第二掺杂区在基底上的投影覆盖所述第一掺杂区在所述基底上的投影。
In another form, the present disclosure further provides a semiconductor structure, including: a base, the base including a substrate, a gate structure over the substrate, a source-drain doped region in the substrate on two sides of the gate structure, and an interlayer dielectric layer over the source-drain doped region; a contact hole plug in the source-drain doped region, where the source-drain doped region covers part of a sidewall of the contact hole plug; a first doped region in the source-drain doped region and between the bottom of the contact hole plug and the source-drain doped region, a doping ion type of the first doped region is the same as a doping ion type of the source-drain doped region, and an ion doping concentration of the first doped region is higher than an ion doping concentration of the source-drain doped region; and a second doped region in the source-drain doped region and over the first doped region, where a doping ion type of the second doped region is the same as the doping ion type of the source-drain doped region, an ion doping concentration of the second doped region is higher than the ion doping concentration of the source-drain doped region, the second doped region covers part of the sidewall of the source-drain doped region, and a projection of the second doped region on the base covering a projection of the first doped region on the base.
与现有技术相比，本发明实施例的技术方案具有以下优点：
Compared with the prior art, forms of the technical solution of embodiments and implementations of the present disclosure have the following advantages:
本发明实施例第二掺杂区位于所述第一掺杂区上，且所述第二掺杂区在基底上的投影覆盖所述第一掺杂区在所述基底上的投影，所述第一掺杂区和第二掺杂区的掺杂离子类型均与源漏掺杂区的掺杂离子类型相同，且所述第一掺杂区和第二掺杂区的掺杂浓度均比源漏掺杂区的掺杂浓度高，形成所述第一掺杂区和第二掺杂区后，刻蚀所述开口底部的第一掺杂区和第二掺杂区，形成由第一掺杂区和第二掺杂区围成的沟槽；在所述开口和沟槽中形成接触孔插塞。
In embodiments and implementations of the present disclosure, the second doped region is located over the first doped region, the projection of the second doped region on the base covers the projection of the first doped region on the base, the doping ion types of the first doped region and the second doped region are the same as the doping ion type of the source-drain doped region, the doping concentrations of the first doped region and the second doped region are higher than the doping concentration of the source-drain doped region, and after the first doped region and the second doped region are formed, the first doped region and the second doped region at the bottom of the opening are etched to form the groove surrounded by the first doped region and the second doped region; and the contact hole plug is formed in the opening and the groove.
所述第一掺杂区与所述接触孔插塞的底部和侧壁接触，所述第二掺杂区与接触孔插塞的侧壁接触，所述第一掺杂区和第二掺杂区包围位于所述源漏掺杂区中的所述接触孔插塞，使得接触孔插塞不易直接与源漏掺杂区接触，降低了接触孔插塞与源漏掺杂区的接触电阻，改善了半导体结构的电学性能。
The first doped region is in contact with the bottom and the sidewall of the contact hole plug, the second doped region is in contact with the sidewall of the contact hole plug, and the first doped region and the second doped region surround the contact hole plug in the source-drain doped region, such that the contact hole plug is not easily in direct contact with the source-drain doped region, contact resistance between the contact hole plug and the source-drain doped region is reduced, and the electrical performance of the semiconductor structure is improved.
图1和图2是一种半导体结构的形成方法对应的结构示意图；
FIG. 1 and FIG. 2 are structural schematic views corresponding to one form of a method for forming a semiconductor structure.
图3至图11是本发明实施例半导体结构的形成方法第一实施例中各步骤对应的结构示意图。
FIG. 3 to FIG. 11 are structural schematic views corresponding to each step in one form of a method for forming a semiconductor structure according to the present disclosure.
由背景技术可知，目前所形成的器件仍有性能不佳的问题。
From the related art, it can be seen that current devices have a problem of poor performance.
现结合一种半导体结构的形成方法分析器件性能不佳的原因。
The reason that the performance of the devices is poor will be analyzed in combination with a method for forming a semiconductor structure.
图1和图2示出了一种半导体结构的形成方法中各步骤对应的结构示意图。
FIG. 1 and FIG. 2 illustrate structural schematic views corresponding to each step in one form of a method for forming a semiconductor structure.
参考图1，提供基底，所述基底包括衬底1、位于所述衬底1上的栅极结构2、位于所述栅极结构2两侧所述衬底1中的源漏掺杂区3以及位于所述源漏掺杂区3上的层间介质层4。
Referring to FIG. 1, a base is provided that includes a substrate 1, a gate structure 2 over the substrate 1, a source-drain doped region 3 in the substrate 1 on two sides of the gate structure 2, and an interlayer dielectric layer 4 over the source-drain doped region 3.
参考图2，刻蚀所述层间介质层4，形成露出所述源漏掺杂区3的开口(图中未示出)，在所述开口中形成接触孔插塞5。
Referring to FIG. 2, the interlayer dielectric layer 4 is etched to form an opening (not shown) that exposes the source-drain doped region 3, and a contact hole plug 5 is formed in the opening.
所述接触孔插塞5与所述源漏掺杂区3连接，用于实现半导体结构内器件的电连接，还用于实现半导体结构与半导体结构之间的电连接，但所述源漏掺杂区3的掺杂浓度较低，所述接触孔插塞5与源漏掺杂区3的接触电阻比较大的，导致半导体结构的电学性能不佳。
The contact hole plug 5 is connected with the source-drain doped region 3 to realize the electrical connection of devices in the semiconductor structure and realize the electrical connection between semiconductor structures, but the doping concentration of the source-drain doped region 3 is lower, and the contact resistance between the contact hole plug 5 and the source-drain doped region 3 is relatively large, resulting that the electrical performance of the semiconductor structure is not good.
为了解决所述技术问题，本发明实施例提供一种半导体结构的形成方法，包括：第二掺杂区位于所述第一掺杂区上，且所述第二掺杂区在基底上的投影覆盖所述第一掺杂区在所述基底上的投影，所述第一掺杂区和第二掺杂区的掺杂离子类型均与源漏掺杂区的掺杂离子类型相同，且所述第一掺杂区和第二掺杂区的掺杂浓度均比源漏掺杂区的掺杂浓度高，形成所述第一掺杂区和第二掺杂区后，刻蚀所述开口底部的第一掺杂区和第二掺杂区，形成由第一掺杂区和第二掺杂区围成的沟槽；在所述开口和沟槽中形成接触孔插塞。
To address the above technical problem, embodiments and implementations of the present disclosure provide a method for forming a semiconductor structure in which the second doped region is located over the first doped region, the projection of the second doped region on the base covers the projection of the first doped region on the base, the doping ion types of the first doped region and the second doped region are the same as the doping ion type of the source-drain doped region, the doping concentrations of the first doped region and the second doped region are higher than the doping concentration of the source-drain doped region, and after forming the first doped region and the second doped region, the first doped region and the second doped region at the bottom of the opening are etched to form a groove surrounded by the first doped region and the second doped region; and a contact hole plug is formed in the opening and the groove.
所述第一掺杂区与所述接触孔插塞的底部和侧壁接触，所述第二掺杂区与接触孔插塞的侧壁接触，所述第一掺杂区和第二掺杂区包围位于所述源漏掺杂区中的所述接触孔插塞，使得接触孔插塞不易直接与源漏掺杂区接触，降低了接触孔插塞与源漏掺杂区的接触电阻，改善了半导体结构的电学性能。
The first doped region is in contact with the bottom and the sidewall of the contact hole plug, the second doped region is in contact with the sidewall of the contact hole plug, and the first doped region and the second doped region surround the contact hole plug in the source-drain doped region, such that the contact hole plug is not easily in direct contact with the source-drain doped region, the contact resistance between the contact hole plug and the source-drain doped region is reduced and the electrical performance of the semiconductor structure is improved.
为使本发明实施例的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明实施例的具体实施例做详细的说明。
In order to make the above purposes, features and advantages of the embodiments of the present disclosure more understandable, specific embodiments and implementations of the present disclosure will be described below in detail with reference to the drawings.