TIXP40 Radiation Tolerant Silicon Power Transistor
date: label: date made
content: 1969
name: label: maker
content: Texas Instruments
notes: label: Description (Brief)
content: Donor information provided in 1987: "The TIXP40 was an experimental radiation tolerant silicon power transistor developed in the mid 1960's. The "TIXP" designates it as an experimental design for a specific customer application. The specifications were registered with JEDEC in 1970 and designated 2N5940. This transistor has a 6916 date code and apparently was soldered into a circuit for evaluation. The 2N5940 is still being produced by TI [in 1987]." Stamped: "[TI logo] TIXP40 / 6916". Packed in a TI cardboard box.
label: Location
content: Currently not on view
setName: label: See more items in
content: Work and Industry: Electricity
creditLine: label: Credit Line
content: from Texas Instruments
dataSource: label: Data Source
content: National Museum of American History
identifier: label: ID Number
content: 1987.0487.159
label: collector/donor number
content: G00415
label: accession number
content: 1987.0487
label: catalog number
content: 1987.0487.159
objectType: label: Object Name
content: Transistor
label: Object Name
content: silicon power
label: Object Name
content: silicon power transistor
label: Object Name
content: transistor
physicalDescription: label: Measurements
content: transistor: 1 1/8 in x 1/2 in; 2.8575 cm x 1.27 cm
label: Measurements
content: box: 5/8 in x 3 1/4 in x 5/8 in; 1.5875 cm x 8.255 cm x 1.5875 cm