Texas Instruments 2N337 Silicon Grown Junction Transistor
date: label: date made
content: ca 1958
name: label: maker
content: Texas Instruments
notes: label: Description (Brief)
content: Transistors, invented at Bell Labs in 1947, gave engineers a powerful new tool for controlling the flow of electrons in circuits. Previous electronic devices used vacuum tubes that were fragile and consumed a lot of electricity. Transistors like these 2N337 units from 1957 proved far more reliable and needed very little power to function. The clear plastic block holds two examples of this silicon transistor design, one of which has the cover removed to show construction details. The 2N337 served as a high-speed switch for use in circuits on satellites.
label: Location
content: Currently not on view
setName: label: See more items in
content: Work and Industry: Electricity
label: See more items in
content: Energy & Power
creditLine: label: Credit Line
content: from Texas Instruments
dataSource: label: Data Source
content: National Museum of American History
identifier: label: ID Number
content: 1987.0487.030
label: catalog number
content: 1987.0487.030
label: collector/donor number
content: G00270
label: accession number
content: 1987.0487
objectType: label: Object Name
content: Silicon Grown Junction Transistor
label: Object Name
content: transistor
label: Other Terms
content: Silicon Grown Junction Transistor; Solid State; Microelectronics
physicalDescription: label: Physical Description
content: plastic (overall material)
label: Measurements
content: overall: 2 3/4 in x 1 1/2 in x 7/8 in; 6.985 cm x 3.81 cm x 2.2225 cm