TI gallium arsenide microwave mixer diode
date: label: date made
content: 1964
name: label: maker
content: Texas Instruments
notes: label: Description (Brief)
content: This diode is a gallium arsenide microwave mixer diode designed and built at TI about 1964 for KU band operation. It is an example of the earliest available semiconductor microwave devices. With the improvements in silicon materials technology, this device type was changed to silicon in 1967 for cost reduction. Reference: Bernie Landress, Curtis Randolph.
label: Location
content: Currently not on view
setName: label: See more items in
content: Work and Industry: Electricity
creditLine: label: Credit Line
content: from Texas Instruments
dataSource: label: Data Source
content: National Museum of American History
identifier: label: ID Number
content: 1987.0487.093
label: collector/donor number
content: G00364
label: catalog number
content: 1987.0487.093
label: accession number
content: 1987.0487
objectType: label: Object Name
content: Diode, Microwave
label: Object Name
content: microwave diode
label: Other Terms
content: Diode, Microwave; Solid State; Microelectronics
physicalDescription: label: Measurements
content: diode: 4 mm x 2 mm; 5/32 in x 3/32 in
label: Measurements
content: box: 10 mm x 30 mm x 35 mm; 13/32 in x 1 3/16 in x 1 3/8 in