To further minimize the influence of charge trapping and enhance the stability and performance of ferroelectric-enhanced Schottky barrier transistors, several strategies can be implemented:
Optimization of Interface Engineering: By carefully designing the interface between the high-k dielectric (HZO) and the semiconductor material, the density of trap states can be reduced. This can involve precise control over the deposition process, interface roughness, and interfacial layer thickness to minimize trap-assisted charge trapping.
Material Selection: Exploring alternative high-k dielectric materials with lower trap densities and improved compatibility with the semiconductor can help mitigate charge trapping effects. Additionally, investigating novel materials for the semiconductor channel that exhibit reduced trap states can enhance device stability.
Innovative Device Structures: Implementing innovative device structures, such as engineered heterostructures or novel gate configurations, can provide better control over charge injection and reduce the impact of charge trapping on device performance. This may involve introducing additional layers or interfaces to suppress trap-assisted tunneling.
Dynamic Biasing Techniques: Utilizing dynamic biasing techniques, such as pulse-width modulation or adaptive voltage control, can help mitigate the effects of charge trapping by periodically refreshing the device state. This can prevent long-term charge accumulation and maintain stable operation over extended periods.
By combining these approaches and continuously refining the fabrication processes, it is possible to minimize the influence of charge trapping and enhance the stability and performance of ferroelectric-enhanced Schottky barrier transistors for logic-in-memory applications.