(a)In a p-n junction diode, the expression for current is \\\\(I=I_0exp[\\dfrac{eV}{2k_BT}-1]\\\\)where \\\\(I_0\\\\) is the reverse saturation current = \\\\(5\ imes 10^{-12}A\\\\)\\\\(T=\\\\)Absolute temperature = \\\\(300\\ K\\\\)\\\\(V\\\\) is the voltage across diode.For forward voltage \\\\(V = 0.6\\ V\\\\) \\\\(I=5\ imes 10^{-12}\ imes exp[\\dfrac{1.6\ imes 10^{-19}\ imes 0.6}{1.376\ imes 10^{-23}\ imes 300}-1] = 0.0256\\ A\\\\) (b) In a p-n junction diode, the expression for current is \\\\(I=I_0exp[\\dfrac{eV}{2k_BT}-1]\\\\) where \\\\(I_0\\\\) is the reverse saturation current = \\\\(5\ imes 10^{-12}A\\\\) \\\\(T=\\\\)Absolute temperature=\\\\(300\\ K\\\\) \\\\(V\\\\) is the voltage across diode. For forward voltage, \\\\(V = 0.7\\ V\\\\) \\\\(I=5\ imes 10^{-12}\ imes exp[\\dfrac{1.6\ imes 10^{-19}\ imes 0.7}{1.376\ imes 10^{-23}\ imes 300}-1]=1.257\\ A\\\\) Hence, increase in current = \\\\(1.257\\ A-0.0256\\ A=1.23\\ A\\\\) (c) In a p-n junction diode, the expression for current is \\\\(I=I_0exp[\\dfrac{eV}{2k_BT}-1]\\\\) where \\\\(I_0\\\\) is the reverse saturation current = \\\\(5\ imes 10^{-12}A\\\\) \\\\(T=\\\\)Absolute temperature=\\\\(300\\ K\\\\) \\\\(V\\\\) is the voltage across diode. For forward voltage \\\\(V = 0.6\\ V\\\\) \\\\(I=5\ imes 10^{-12}\ imes exp[\\dfrac{1.6\ imes 10^{-19}\ imes 0.6}{1.376\ imes 10^{-23}\ imes 300}-1]=0.0256\\ A\\\\) For forward voltage \\\\(V = 0.7\\ V\\\\) \\\\(I=5\ imes 10^{-12}\ imes exp[\\dfrac{1.6\ imes 10^{-19}\ imes 0.7}{1.376\ imes 10^{-23}\ imes 300}-1]=1.257\\ A\\\\) Hence increase in current=\\\\(1.257\\ A-0.0256\\ A = 1.23\\ A\\\\) Dynamic resistance = Change in voltage /Change in current \\\\(=\\dfrac{0.7-0.6}{1.23}=0.081\\Omega\\\\) (d) If reverse bias voltage changes from \\\\(1\\ V\\\\) to \\\\(2\\ V\\\\), the current will be almost constant, because dynamic resistance in the reverse bias is infinite.