Silicon Carbide (SiC) is evolving at a rapid space. SiC wafers are largely preferred by semiconductor device manufacturers and fabrication facilities as they offer several advantages over traditional silicon substrates. One of the major advantages of this substrate is its hardness. This substrate is increasingly used for thin wafers to minimize the impact of pressure or stress. Also, SiC has a low coefficient for thermal expansion, which means its shape does not gets altered when subjected to heating or cooling. It can operate on temperatures as high as 1600 �C, which makes it suitable for high-temperature applications. Moreover, this property also helps increase the life of the semiconductor device in which the SiC wafer is installed. Other advantages of SiC wafers include higher power density, reduced switching losses, better heat dissipation, and increased bandwidth capacity. These wafers are increasingly used in the automotive, industrial, and energy industries.
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