Emerging semiconductor materials, such as wide bandgap Silicon Carbide (SiC) and Gallium Nitride (GaN), are revolutionizing power semiconductor technology. SiC and GaN offer superior properties, including higher breakdown voltage, faster switching speeds, lower conduction losses, and better thermal conductivity. These materials enable the development of more efficient and compact power devices, contributing to advancements in renewable energy, electric vehicles, and other high-power applications.