The precise control of the boron-nitrogen bond orientation and rhombohedral stacking during the bevel-edge epitaxy process is facilitated by the unique surface morphology and growth dynamics induced by the vicinal nickel substrate with bunched step edges. The bunched step edges on the nickel surface provide preferential sites for nucleation, guiding the initial growth of the rhombohedral boron nitride (rBN) layers. The interaction between the substrate and the rBN layers influences the orientation of the boron-nitrogen bonds, ensuring alignment with the substrate lattice. Additionally, the specific step configurations on the substrate surface promote the rhombohedral stacking of the rBN layers by controlling the sliding vector at each interface. This results in the formation of centimeter-sized single-crystal rBN layers with exact interlayer ABC stacking. Overall, the bevel-edge epitaxy process enables the precise control of bond orientation and stacking through the tailored growth conditions and substrate morphology, leading to the realization of high-quality, single-crystal rBN layers with desirable properties.