# Structural and Optical Characteristics ofγ-In2Se3 Nanorods Grown on Si Substrates

Authors: M. D. Yang; C. H. Hu; S. C. Tong; J. L. Shen; S. M. Lan; C. H. Wu; T. Y. Lin
Journal: Journal of Nanomaterials
 (2011)

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## Abstract

This study attempted to grow single-phaseγ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase. The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption.


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*Source: 976262-2011-10-05.xml*