# A SIW Antipodal Vivaldi Array Antenna Design

Authors: Ying Suo; Wei Li; Jianzhong Chen
Journal: International Journal of Antennas and Propagation
 (2016)

---

## Abstract

A kind of compact SIW (substrate integrated waveguide) Vivaldi array antenna is proposed and analyzed. The antenna consisted of 4 Vivaldi structure radiation elements fed by an equal power divider with SIW technology. The radiation element is composed of antipodal index gradient microstrip lines on both sides of the substrate. The measured reflection coefficient of the array antenna is less than −10 dB from 8.88 GHz to 10.02 GHz. The measured gain of the array antenna is 13.3 dB on 9.5 GHz.


---

## Body

## 1. Introduction

The Vivaldi antenna has been used in many microwave engineering applications for its simple structure, low cross polarization, and highly directive patterns characteristics, especially in ultra bandwidth applications such as vehicular wireless communication, radar imaging, and through-the-wall imaging [1–3]. Many kinds of Vivaldi antennas have been investigated for wideband application [4, 5], and some new antipodal Vivaldi antennas have been designed to improve radiation pattern and directivity [6, 7].An equal power divider is necessary for the antenna array feed network for equal amplitude design. The SIW multiway microwave power divider attracts a lot of attentions because of its advantages such as small structural dimension, high integration, and low cost [8–10]. A Vivaldi antenna array fed by a SIW printed on a thick substrate is proposed in [11]. A compact four-element printed Vivaldi array is designed and investigated in [12].The SIW is able to be fabricated by standard low cost PCB technique using low loss and low cost material substrates [13]. There is often a higher return loss in an array antenna system than a single antenna one as the feeding network for an array antenna, such as T-junction or Y-junction waveguide, will introduce a discontinuity where reflection increases sharply. To reduce the return loss, many approaches have been proposed. Reference [14] focused on the structure of its linear tapered array antennas, compared the reflection coefficients of three different structures of the array antenna, and found a maximum −10 dB bandwidth of 0.8 GHz in X-band, though the bandwidth is not wide.To broaden the bandwidth of the array antenna, a Vivaldi array antenna operating inX-band is designed and measured in this paper. Return loss is optimized in both antenna and feed network. Vivaldi antenna is used as the array antenna element for enlarging the bandwidth. To reduce the return loss, metal via-holes are added and adjusted in the SIW. The antenna consisted of 4 Vivaldi antenna elements fed by a SIW equal power divider. Each Vivaldi element is composed of antipodal index gradient microstrip lines on both sides of the substrate, and SIW-microstrip transition structure is designed for measurement and connection. Finally this paper achieved an antenna design operating in X-band.


## 2.
4-Way SIW Power Divider Design

A SIW is composed of two columns of cylinder metal via-holes in the side faces of a dielectric substrate and metal layers on the upper and lower faces. The transmission characteristics of a SIW are almost the same as those of its equivalent metal waveguide. As SIWs are often integrated with coplanar waveguides or microstrip lines, transition structures should be designed for the connection. The transition structure must have a low insertion loss, a wide working band, and a simple geometry to be fabricated. The SIW connected with the microstrip transition is shown in Figure1.Figure 1
SIW with the microstrip transition.In Figure1, a is the distance between the two columns of cylinder metal via-holes in the SIW, p is the distance between via-holes in the via-holes array. Since the field of the microstrip line is similar to the TE10 mode of the substrate integrated waveguide, the SIW-microstrip transition is generally a tapered microstrip line. The tapered line shown in Figure 2 is able to realize impedance transformation between the 50 Ω microstrip line and the substrate integrated waveguide.Figure 2
Tapered microstrip line.As the tapered line is designed to realize impedance transformation, the left width of the tapered lineW should equal the width of the 50 Ω microstrip line. The right width of the tapered line D should ensure that the impedance of the microstrip line equals that of the SIW.For the microstrip line, as is shown in Figure3, its width is W; thickness is t; when the thickness of the dielectric is h, the relative permittivity is εr.Figure 3
Microstrip line profile.The impedance of the microstrip line will be(1)Z0=60εreln⁡8hW+W4hΩW≤h,Z0=120πεreW/h+1.393+0.667ln⁡W/h+1.444ΩW≥h,where (2)εre=εr+12+εr-122+12hW-1/2+0.0411-Wh2W≤h,εre=εr+12+εr-121+12hW-1/2W≥h.The equivalent impedance of the SIW in its TE mode is(3)ZTE10=η1-λ/2a.Ordinary Y-shaped structure can achieve the power division, but its discontinuous geometry will result in high return loss in pass band. Figure4 shows that a 4-way SIW equal power divider is designed. The parameters of the four-way SIW power splitter are shown in Table 1. As is shown in Figure 4, adding a metal via-hole in the 90-degree bend of the SIW can reduce the power reflection when the electric field distribution of the Y-junction is changed by surface current distribution of the metal via-hole inductance. By adjusting the diameter and position of the via-hole, the least reflection can be obtained after simulation.Table 1
Parameters of the 4-way SIW power divider.
Parameters (mm)
a
p
D
0
h
1
h
2
h
3
Z
1
Z
2
D
1
D
2
D
3
D
4
t
1
w
2
t
2
t
3
w
4
t
4
W
D
H
12
1
0.6
4
17
17
1.6
0.2
0.5
0.5
0.6
0.3
4.9
5.5
5
5
5
7
2
3.2
4.5Figure 4
4-way SIW power divider.For parameters in Figure4, D0 is the diameter of the via-holes, h1 is the width of the connection structure, h2 is the width of the first section of Y-junction structure, h3 is the width of the second Y-junction structure, Z1 is the thickness of the dielectric slab, and Z2 is the thickness of PEC in the simulation setting. It can be seen that D1, D2, D3, and D4 are the diameters of the inductive via-hole while t1,t2,t3,t4,w2, and w4 determine the position of the via-holes. One via-hole is on the perpendicular bisector of the entire structure and the other two via-holes are on the perpendicular bisectors of the two upper Y-junctions, so there are no parameters w1 and w3.To be tested by coaxial cable, five SIW microstrip transitions are connected with the SIW power splitter. The parameters of the microstrip transitions mentioned above areW, D, and H. W equals 2 and D equals 3.2, which ensures the impedance transformation of the 50 Ω microstrip line and the SIW. L is optimized to 4.5 for the least reflection loss.After all the via-holes get their optimized diameter and position that are shown in Table1, the 4-way SIW power divider is simulated. The permittivity of the substrate is 4.3, and the loss tangent is 0.0015 as used in this design. The simulated S-parameters of different ports are shown in Figure 5. It can be seen that the S11 parameter is less than −10 dB from 8.5 GHz to 10.5 GHz. In Figure 5, the transmission coefficient of S21, S31, S41, and S51 is the same for the equal power division. As shown in Figure 5, the transmission coefficient of the power divider is −6.3 dB~−6.6 dB from 8.9 GHz to 10.07 GHz, so it is suitable for the 4-element antenna array design, and the insertion loss is about 0.3~0.6 dB from 8.9 GHz to 10.07 GHz.Figure 5
S parameters of the 4-way SIW power divider.The simulated surface current of the SIW divider on 9.5 GHz is shown in Figure6. And the simulated electric field of the SIW divider on 9.5 GHz is shown in Figure 7.Figure 6
Surface current of the 4-way SIW power divider.
(a)
Phase is 0 deg
(b)
Phase is 90 degFigure 7
Electric field of the 4-way SIW power divider.
(a)
Phase is 0 deg
(b)
Phase is 90 deg


## 3. Antipodal Vivaldi Antenna Array Design

The antipodal Vivaldi radiation element is composed of complementary structures on both sides of the substrate. The antenna element is shown in Figure8. The upper part is the antenna radiator, the middle part is the connection structure, and the lower part is the microstrip transition. For the upper radiation part of the antenna shown in Figure 8(a), the radiator is bordered by part of an ellipse curve on the right and an index gradient curve on the left. The index gradient curve whose exponential rate r equals 1 satisfies the following formula:(4)y=c1×erz+c2.Figure 8
Antipodal Vivaldi antenna element.
(a)
Upper part
(b)
Lower partThe Vivaldi antenna is directly fed by a microstrip line. Impedance of the microstrip is equal to that of each export of the equal power divider. A SIW-microstrip transition structure is designed for measurement and connection. The transition section is a tapered microstrip line.As is shown in Figure8, ws is the antenna width, L is the antenna length, L2 is set for the length of straight part in SIW-microstrip transition, L1 is the length of the connection part, and L3 is the length of the radiator. R is length of the truncated elliptic curve. The parameters of the Vivaldi radiation element are shown in Table 2.Table 2
Parameters of the Vivaldi antenna element.
Parameters (mm)
w
1
R
L
L
1
L
2
L
3
w
s
8.35
6.2
30.37
8.2
17
12.67
11.4Parameters on Table2 are also optimized to get the best radiation characteristics of the antenna. The simulation model of antipodal Vivaldi antenna based on 4-way SIW power divider is shown in Figure 9. The dielectric substrate has a relative permittivity of 4.5 and a thickness of 1.6 mm. Parameters of the antenna and the SIW equal power divider equal those in Tables 1 and 2.Figure 9
Simulation model of the SIW Vivaldi antenna array.
(a)
Upper part
(b)
Lower partTo get the optimized parameters of the diameter and position of a via-hole,S11 of the 4-way SIW power divider is simulated when one of the parameters of the via-hole varies. Because of the symmetry of the SIW, 4 of the 9 via-holes need to be analyzed.Figure10 shows the simulated S11 when the diameter of via-hole 1 D1 varies from 0.3 to 0.6. It can be seen that the S11 curve moves up when D1 increase, but not very much. Then 0.5 is picked as the optimized value of D1 based on the S11 curves.Figure 10
S
11 when D1 varies.S
11 when t1 varies from 3 to 6 is shown in Figure 11. In Figure 11, the S11 curve firstly moves down and then moves up as t1 increases. Therefore the optimized t1 lies between 4 and 5. Obviously S11 is vastly dependent on t1, so repeated simulations were carried out for the least reflection, which have ultimately shown that 4.9 is the best t1 value.Figure 11
S
11 when t1 varies.Figure12 has shown the simulated S11 curves when the diameter of via-hole 2 D2 varies from 0.2 to 0.6. The S11 is also not very dependent on D2. For both low reflection loss and wide bandwidth, 0.5 is picked as D2.Figure 12
S
11 when D2 varies.S
11 when t2 varies from 3 to 6 is shown in Figure 13. When t2 increases, the S11 curve firstly moves down and then moves up, but the two resonate frequencies of the S11 curve moves right continuously. In consideration of both bandwidth and center frequency, t2=5 is chosen.Figure 13
S
11 when t2 varies.SimulatedS11 is shown in Figure 14 when w2 varies from 3 to 6. As w2 increases, the two center frequencies are moving left. The optimized w2 lies between 4 and 6. After repeated simulation, 5.5 is found to be the optimized w2.Figure 14
S
11 when w2 varies.S
11 when D3 varies from 0.3 to 0.6 is shown in Figure 15. The S11 curve is much more dependent on D3 than D1 and D2, which moves down as D3 increases. 0.5 is picked as the optimized D3.Figure 15
S
11 when D3 varies.S
11 when t3 varies from 3 to 6 is shown in Figure 16. The S11 curve firstly moves down and then moves up, but the two center frequencies keep moving right, as t3 increases. 4 is picked as the value of t3.Figure 16
S
11 when t3 varies.Figure17 shows the S11 curves of the SIW when the diameter of via-hole 4 varies from 0.3 to 0.6. The high frequency part of the S11 curve moves up while the low frequency part moves down as D4 increases. So 0.3 is picked as the optimized D4 for wider bandwidth.Figure 17
S
11 when D4 varies.S
11 when t4 varies is shown in Figure 18. The S11 curve firstly moves down and then moves up as t4 increases. The optimized t4 lies between 7 and 8. Later simulations have found that 7 is the optimized t4.Figure 18
S
11 when t4 varies.S
11 when w4 varies from 3 to 6 is simulated and shown in Figure 19. The bandwidth of the curves changes a little while the center frequencies change more when w4 increases. So 4 is picked as the value of w4 in consideration of the two center frequencies.Figure 19
S
11 when w4 varies.As is shown in Figure20, a 4-element antipodal SIW Vivaldi antenna array is fabricated and measured. The total dimension of the antenna array is 85 mm × 7 mm with the feeding cable head. The parameters of the antenna array are D1=0.5 mm, t1=4.9 mm, D2=0.5 mm, t2=5 mm, w2=5.5 mm, D3=0.5 mm, t3=4 mm, D4=0.3 mm, and t4=4 mm.Figure 20
Fabricated antipodal SIW Vivaldi antenna array.Figure21 shows the simulated and measured reflection coefficient. Simulated results show that the reflection coefficient is less than −10 dB from 8.9 GHz to 10.07 GHz. And the measured reflection coefficient is less than −10 dB from 8.88 GHz to 10.02 GHz. The measurement shows agreement with the simulation.Figure 21
Reflection coefficient of the SIW Vivaldi antenna array.The simulated surface current of the SIW Vivaldi antenna array on 9.5 GHz is shown in Figure22. And the simulated electric field of the SIW Vivaldi antenna array on 9.5 GHz is shown in Figure 23.Figure 22
Surface current of the SIW Vivaldi antenna array.
(a)
Phase is 0 deg
(b)
Phase is 90 degFigure 23
Electric field of the SIW Vivaldi antenna array.
(a)
Phase is 0 deg
(b)
Phase is 90 degThe simulated and measured radiation patterns on 9.5 GHz of the SIW Vivaldi antenna array are shown in Figure24. The array gain can reach 14 dB on 9.5 GHz in simulation, and the main lobe width is about 17.3°. The measured gain is about 13.3 dB, and the main lobe width is about 16.9°.Figure 24
Pattern of the SIW Vivaldi antenna array on 9.5 GHz.
(a)
E-plane
(b)
H-planeFigure25 is the simulated gain in operating band. It is shown that the gain is increased with frequency increasing.Figure 25
Simulated gain of the SIW Vivaldi antenna array.


## 4. Conclusion

A 4-way SIW equal power divider is designed, and the impedance characteristics and transmission characteristics satisfy the array design. The Vivaldi radiation element consisted of the antipodal structure. The operating bandwidth of the SIW Vivaldi array antenna is more than 1.1 GHz inX-band. And the gain of the array antenna is 13.3 dB on 9.5 GHz.



---

*Source: 9280234-2016-01-21.xml*