# Semiconductor Materials for Solar PV Technology and Challenges towards Electrical Engineering

Authors: M. Siva Ramkumar; R. Felshiya Rajakumari; Nithiyananthan Kannan; R. Premkumar; S. Mohanasundaram; S. Purushotham; D. Ramya; Kavitha Rajan
Journal: Advances in Materials Science and Engineering
 (2022)

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## Abstract

The contemporary concern in worldwide power scenario and consumption rate is frightening significantly at a marvelous amount of population, and it originates a very high augment in the electrical energy area. The all-embracing attraction and manufacture of fossil energy is the chief reason in the ecological issues. Due to these relic fuels, the ecological resources get exhausted, and it results in climatic change. Due to these negative aspects, every country puts effort to bring the energy efficiency high with the help of renewable energy. Presently, the solar energy donation worldwide decreases. Contrarily, solar energy contribution to the global energy is highly contrary to nonconventional energy resources. But there is a progress in power generation, and it plays a vital role in solar photovoltaic generation. Gallium nitride and silicon carbide power semiconductors will emerge to bring the efficiency high in the photovoltaic technology. In this work, we will converse about how to increase the efficiency by using gallium nitride.


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## Body

## 1. Introduction

Since elongated occasion, mankind is using dissimilar predictable power wealth such as fossil fuels, coal, and natural gas. By using relic fuels for many years, it causes compensation to the ecological hazards, and it affects the globle with more pollutant gases. Global warming and acid rain are the main negative aspects in conventional energy sources for many years. In order to overcome from the negative era, photovoltaic cells have been introduced in the market area. Most solar panels consist of crystalline silicon PV cells, which fabricate linear proficiency to adapt sunlight into electricity [1]. Multijunction astral cells fabricate efficiency above 40%, and they are ready with different part of the solar cells to confine sunlight. Photovoltaic cell is the recent generation, and it is made up of semiconductor materials which do not activate at high temperature. When the sunlight reaches the surface of the PV Cell, the electrical energy is being created with PV Cell process [1, 2]. Ga-N plans have been shaped to meet prospect insist of electricity. Using Ga-N campaign in solar semiconductor properties, the dimension is abridged, and it also picks up the efficiency in contrast with the silicon process. Ga-N devices offer good constancy area, and it also enhances a broad range of power levels. Using this semiconductor fabric, we may lessen the cost of equipment area of planetary power with string cargo space up to 70%. Section 1 adapts with the introduction of the work. Section 2 describes the materials in the photovoltaic technology. Section 2 states the new-fangled emerging technologies. Section 4 imitates the recent technologies in solar photovoltaics. Section 5 lists the leading PV countries. Section 6 mentions the PV electricity production in leading countries. Section 7 provides conclusion.


## 2. Materials in Photovoltaic Technology

### 2.1. Gallium Nitride

Gallium nitride is the extensive crowd space semiconductor material, and it is a broadly worn device subsequent to silicon in the industry area. New pioneering researchers have been urbanized in the technology, and it has some specific properties such as lofty electron mobility, thick pop group, elevated power application, and high warmth operation. It has heteroconfiguration which shows evidence of electron gas, and it escorts to the lofty electron mobility transistor. Ga-N devices has accomplished to develop the new-fangled incorporated circuits and reflexive devices such as filter circuits, and it also works for more efficient devices. It is a speedy mounting element in the photovoltaic generation [3, 4]. A lot of researchers and manufacturing activities are rising fast in gallium nitride electronics, and these devices are first enthused and verified in LED applications. This sets the field of Ga-N electronic devices, and today these devices are the best ever budding forecast various application purposes. It may endow with 5 times better than the silicon carbide products. Ga-N is imperative to desire for solar panel blueprint because it has enhanced a lot of routine modus operandi, and it also trims down energy and the substantial space in contrast with conventional silicon. In the middle of the most important considerations, when estimating Ga-N devices, the solar power applications are functionally built into the power transistor with supplementary devices. When coming to discrete Ga-N devices, it has high mobility transistors, it performs as a lone occupation, and it ought to be implementing with manifold components to attain the functional system. On the other side, the incorporated Ga-N power IC transistor unites several power electronics task onto the single chip Ga-N device [3]. In addition to this, to optimize planetary scheme efficiency and power capacity, the incorporated Ga-N power IC diminishes complication, has lesser cost, and also diminishes the size for system designs [4, 5]. The most recent Ga-N power IC clubbed with FET gate driver circuits manage and guard the Ga-N power toggle at soaring speeds.Figure1 is from the research paper: Convalescing Competence of Ga-N-Based Materials for Solar Cells and LEDs. In the midst of the limitations of Ga-N devices, it has poor efficiency of wavelength devices because it engenders 2D hole gas in the p-type section of Ga-N. To formulate the p-type section and to recover the competence of extended wavelength LEDs and astral cells, the InGaN solar cell with multiple layers is proposed.Figure 1
Wavelength of GaN devices with multiple layers.
(a)(b)


### 2.2. Monocrystalline Materials

This material is most dependable and the most competent way to produce electricity from solar energy. Each PV component is fictitious from the solitary silicon crystal [6]. The silicon is purified, soften, and then crystallized, which then incises into slender wafers to construct individual cells. Its competence is in the range of 15–24% as they are fictitious from the highest grade silicon making them cost effective in longterm. Monocrystalline lunar panels are usually exploited for bulky extent astral submission, such as saleable and inhabited planetary fitting [6–8]. They can also be engaged for slighter scale function, and the size of the board is based on the sort of claim. Minor monocrystalline planetary board can be used to charge laptops, digital cameras, and phones. While the superior board panel can be used for power appliances such as microwaves, outdoor lighting systems, or included into a astral compilation to supremacy houses located in distant areas.


### 2.3. Amorphous Silicon Solar Cell

It is most frequently urbanized and a noncrystalline allotropic form of silicon. It is the majority admired amongst slender film equipment but horizontal to squalor. Some of the varieties of Si are amorphous silicon, nebulous silicon germanium, and amorphous silicon nitride [6–9]. Due to arbitrary configuration, Si has elevated band gap in contrast to monocrystalline silicon, and it is 50 times superior than light absorptivity.These cells are contrived by vapour depositing silicon coating onto a glass frame, but its efficiency is very squat due to the dreadful conditions of material when it is exposed to sun rays.Figure2 indicates according to the paper—Relative Cram of Two Commercial Photovoltaic Panels under Expected Sunlight Conditions—that the solar panel is perpendicular at the angle position and measures the voltage-current uniqueness of monocrystalline and amorphous silicon sheet which is precise using the capacitor technique. The voltage and current is found out to be 0.1 mV and 0.08 mA, but the temperature is measured with the sensors.Figure 2
Voltage and current characteristics of mSi and aSi using the capacitor technique.While titling the solar panel, the utmost power can be spawn form the panel, from Figure3, and it states that the utmost authority spawn from the monocrystalline silicon board is two times higher than the amorphous silicon solar panel. However, the normalised power of the amorphous silicon solar panel is somewhat bigger than the monocrystalline lunar panel [8, 9]. The enhanced recital of the monocrystalline silicon lunar panel in assessment with the amorphous panel is due to its competence. Figure 3 represents the utmost power spawn from the PV panels [10, 11]. The high efficiency is obtained with the high quality of silicon, and it performs 99.9%. On account of the considerations, the dissimilarity in temperature between the amorphous and monocrystalline silicon lunar panels is elevated in frost days than in summer days. The monocrystalline silicon sheet is proficient by considering the utmost power in the panel. The monocrystalline lunar panel is majorly appropriate to claim restricted space such as planetary patch glow.Figure 3
Maximum power generated from the photovoltaic panels.


### 2.4. Polycrystalline Solar Panels

It uses planetary cells that are made from the multifaceted silicon cells. The facade of polycrystalline cells is not as consistent as the monocrystalline solar cells. They have a shell with an arbitrary model of crystal which limits rather than the solid colour of solitary crystal cells [6, 12]. Since a squat cost silicon is used to manufacture a polycrystalline cell, their efficiency is generally in the range of 20% and its charge is fewer than the monocrystalline cell. It is most broadly used in PV panels [8–10]. They access a thick range of power ratings about 250 W for its use in housing and commercial applications. Figure 4 states the V-I characteristics of polycrystalline and monocrystalline PV cells [6, 12].Figure 4
V-I characteristics for polycrystalline and monocrystalline lunar panels.From Figures5 and 6, the comparison figure for current versus voltage characteristics for polycrystalline and monocrystalline lunar panels is provided. The V-I characteristic is obtained with different temperatures (52°C) and irradiance levels (865 M/m2). The maximum output power and efficiency is found to be 8.5 W and 7.8% for monocrystalline lunar panel and 6.8 W and 6.7% for polycrystalline lunar cells. Hence, it states that monocrystalline solar panels offer good efficiency when compared with polycrystalline solar panels. This monocrystalline efficiency was proved in comparative analysis and performance of the polycrystalline and monocrystalline lunar module.Figure 5
V-I characteristics of polycrystalline lunar panels.Figure 6
V-I characteristics of monocrystalline lunar panels.


### 2.5. Silicon Carbide

The solar technology ropes for project management that uses semiconductor materials like silicon carbide. SiC is used in power electronics devices like inverters which transport force from photovoltaic array to the power grid. When PV component produces electricity, energy flows from a power electronics mechanism that enclose semiconductor devices [1, 2, 13]. Silicon was the first chosen semiconductor used to make this campaign, but researchers verified that SiC can be slighter, faster, tougher, more efficient, and more cost effective. SiC withstands elevated temperature and voltage than silicon, making it more steadfast and flexible. The inverter converts the DC produced by the PV panel to grid tied AC system. SiC inverters can maneuver at about 99% over wide assortment power loss and can fabricate optimal frequency [2]. SiC support power electronics devices can supposedly tolerate temperature up to 300°C, while silicon devices are usually imperfect upto 150°C. Contrast with silicon devices, SiC devices can abide almost 10 times the voltage and take extra current and supplementary heat from the energy system [13]. SiC can knob on and off rapidly although some energy is lost during switching, Faster toggle limits increase the losses and efficiency of the recovery devices. Solar technology applies funding project at the Utah University using SiC to intend and widen a stable receiver to sop up sunlight.


### 2.6. Gallium Arsenide

This material is rising reputation in planetary panels semiconductor in topical years. It is a complex mixture of gallium and arsenide. It is exceedingly successful in semiconductor material and fabricate lofty energy, and it has a spacious bandgap enhanced than silicon. However, there are two drawbacks: first, GaAs dissolves readily into gold and gold-based alloys and second arsenic is poisonous and generate protection issues when manufacturing the solar cells [2]. GaA is a substrate material for epitaxial growth of semiconductor materials including aluminum gallium arsenide, indium gallium arsenide, and other materials. This object has soaring electron mobility and elevated typical velocity which permits the gallium arsenide transistor to task at frequencies in surplus choice of 250 GHz. It has high-quality warmth resistant properties as GaAs devices and are relatively insensate to overheating temperature due to wider vigor band gap because it creates fewer noise [2, 14]. A major benefit of GaAs is having a direct band gap, and this means it can be used to soak up and produce light which is grave in solar cell applications which is shown in Figure 7.Figure 7
Schematic structure of GaA-based PV cells.


## 2.1. Gallium Nitride

Gallium nitride is the extensive crowd space semiconductor material, and it is a broadly worn device subsequent to silicon in the industry area. New pioneering researchers have been urbanized in the technology, and it has some specific properties such as lofty electron mobility, thick pop group, elevated power application, and high warmth operation. It has heteroconfiguration which shows evidence of electron gas, and it escorts to the lofty electron mobility transistor. Ga-N devices has accomplished to develop the new-fangled incorporated circuits and reflexive devices such as filter circuits, and it also works for more efficient devices. It is a speedy mounting element in the photovoltaic generation [3, 4]. A lot of researchers and manufacturing activities are rising fast in gallium nitride electronics, and these devices are first enthused and verified in LED applications. This sets the field of Ga-N electronic devices, and today these devices are the best ever budding forecast various application purposes. It may endow with 5 times better than the silicon carbide products. Ga-N is imperative to desire for solar panel blueprint because it has enhanced a lot of routine modus operandi, and it also trims down energy and the substantial space in contrast with conventional silicon. In the middle of the most important considerations, when estimating Ga-N devices, the solar power applications are functionally built into the power transistor with supplementary devices. When coming to discrete Ga-N devices, it has high mobility transistors, it performs as a lone occupation, and it ought to be implementing with manifold components to attain the functional system. On the other side, the incorporated Ga-N power IC transistor unites several power electronics task onto the single chip Ga-N device [3]. In addition to this, to optimize planetary scheme efficiency and power capacity, the incorporated Ga-N power IC diminishes complication, has lesser cost, and also diminishes the size for system designs [4, 5]. The most recent Ga-N power IC clubbed with FET gate driver circuits manage and guard the Ga-N power toggle at soaring speeds.Figure1 is from the research paper: Convalescing Competence of Ga-N-Based Materials for Solar Cells and LEDs. In the midst of the limitations of Ga-N devices, it has poor efficiency of wavelength devices because it engenders 2D hole gas in the p-type section of Ga-N. To formulate the p-type section and to recover the competence of extended wavelength LEDs and astral cells, the InGaN solar cell with multiple layers is proposed.Figure 1
Wavelength of GaN devices with multiple layers.
(a)(b)


## 2.2. Monocrystalline Materials

This material is most dependable and the most competent way to produce electricity from solar energy. Each PV component is fictitious from the solitary silicon crystal [6]. The silicon is purified, soften, and then crystallized, which then incises into slender wafers to construct individual cells. Its competence is in the range of 15–24% as they are fictitious from the highest grade silicon making them cost effective in longterm. Monocrystalline lunar panels are usually exploited for bulky extent astral submission, such as saleable and inhabited planetary fitting [6–8]. They can also be engaged for slighter scale function, and the size of the board is based on the sort of claim. Minor monocrystalline planetary board can be used to charge laptops, digital cameras, and phones. While the superior board panel can be used for power appliances such as microwaves, outdoor lighting systems, or included into a astral compilation to supremacy houses located in distant areas.


## 2.3. Amorphous Silicon Solar Cell

It is most frequently urbanized and a noncrystalline allotropic form of silicon. It is the majority admired amongst slender film equipment but horizontal to squalor. Some of the varieties of Si are amorphous silicon, nebulous silicon germanium, and amorphous silicon nitride [6–9]. Due to arbitrary configuration, Si has elevated band gap in contrast to monocrystalline silicon, and it is 50 times superior than light absorptivity.These cells are contrived by vapour depositing silicon coating onto a glass frame, but its efficiency is very squat due to the dreadful conditions of material when it is exposed to sun rays.Figure2 indicates according to the paper—Relative Cram of Two Commercial Photovoltaic Panels under Expected Sunlight Conditions—that the solar panel is perpendicular at the angle position and measures the voltage-current uniqueness of monocrystalline and amorphous silicon sheet which is precise using the capacitor technique. The voltage and current is found out to be 0.1 mV and 0.08 mA, but the temperature is measured with the sensors.Figure 2
Voltage and current characteristics of mSi and aSi using the capacitor technique.While titling the solar panel, the utmost power can be spawn form the panel, from Figure3, and it states that the utmost authority spawn from the monocrystalline silicon board is two times higher than the amorphous silicon solar panel. However, the normalised power of the amorphous silicon solar panel is somewhat bigger than the monocrystalline lunar panel [8, 9]. The enhanced recital of the monocrystalline silicon lunar panel in assessment with the amorphous panel is due to its competence. Figure 3 represents the utmost power spawn from the PV panels [10, 11]. The high efficiency is obtained with the high quality of silicon, and it performs 99.9%. On account of the considerations, the dissimilarity in temperature between the amorphous and monocrystalline silicon lunar panels is elevated in frost days than in summer days. The monocrystalline silicon sheet is proficient by considering the utmost power in the panel. The monocrystalline lunar panel is majorly appropriate to claim restricted space such as planetary patch glow.Figure 3
Maximum power generated from the photovoltaic panels.


## 2.4. Polycrystalline Solar Panels

It uses planetary cells that are made from the multifaceted silicon cells. The facade of polycrystalline cells is not as consistent as the monocrystalline solar cells. They have a shell with an arbitrary model of crystal which limits rather than the solid colour of solitary crystal cells [6, 12]. Since a squat cost silicon is used to manufacture a polycrystalline cell, their efficiency is generally in the range of 20% and its charge is fewer than the monocrystalline cell. It is most broadly used in PV panels [8–10]. They access a thick range of power ratings about 250 W for its use in housing and commercial applications. Figure 4 states the V-I characteristics of polycrystalline and monocrystalline PV cells [6, 12].Figure 4
V-I characteristics for polycrystalline and monocrystalline lunar panels.From Figures5 and 6, the comparison figure for current versus voltage characteristics for polycrystalline and monocrystalline lunar panels is provided. The V-I characteristic is obtained with different temperatures (52°C) and irradiance levels (865 M/m2). The maximum output power and efficiency is found to be 8.5 W and 7.8% for monocrystalline lunar panel and 6.8 W and 6.7% for polycrystalline lunar cells. Hence, it states that monocrystalline solar panels offer good efficiency when compared with polycrystalline solar panels. This monocrystalline efficiency was proved in comparative analysis and performance of the polycrystalline and monocrystalline lunar module.Figure 5
V-I characteristics of polycrystalline lunar panels.Figure 6
V-I characteristics of monocrystalline lunar panels.


## 2.5. Silicon Carbide

The solar technology ropes for project management that uses semiconductor materials like silicon carbide. SiC is used in power electronics devices like inverters which transport force from photovoltaic array to the power grid. When PV component produces electricity, energy flows from a power electronics mechanism that enclose semiconductor devices [1, 2, 13]. Silicon was the first chosen semiconductor used to make this campaign, but researchers verified that SiC can be slighter, faster, tougher, more efficient, and more cost effective. SiC withstands elevated temperature and voltage than silicon, making it more steadfast and flexible. The inverter converts the DC produced by the PV panel to grid tied AC system. SiC inverters can maneuver at about 99% over wide assortment power loss and can fabricate optimal frequency [2]. SiC support power electronics devices can supposedly tolerate temperature up to 300°C, while silicon devices are usually imperfect upto 150°C. Contrast with silicon devices, SiC devices can abide almost 10 times the voltage and take extra current and supplementary heat from the energy system [13]. SiC can knob on and off rapidly although some energy is lost during switching, Faster toggle limits increase the losses and efficiency of the recovery devices. Solar technology applies funding project at the Utah University using SiC to intend and widen a stable receiver to sop up sunlight.


## 2.6. Gallium Arsenide

This material is rising reputation in planetary panels semiconductor in topical years. It is a complex mixture of gallium and arsenide. It is exceedingly successful in semiconductor material and fabricate lofty energy, and it has a spacious bandgap enhanced than silicon. However, there are two drawbacks: first, GaAs dissolves readily into gold and gold-based alloys and second arsenic is poisonous and generate protection issues when manufacturing the solar cells [2]. GaA is a substrate material for epitaxial growth of semiconductor materials including aluminum gallium arsenide, indium gallium arsenide, and other materials. This object has soaring electron mobility and elevated typical velocity which permits the gallium arsenide transistor to task at frequencies in surplus choice of 250 GHz. It has high-quality warmth resistant properties as GaAs devices and are relatively insensate to overheating temperature due to wider vigor band gap because it creates fewer noise [2, 14]. A major benefit of GaAs is having a direct band gap, and this means it can be used to soak up and produce light which is grave in solar cell applications which is shown in Figure 7.Figure 7
Schematic structure of GaA-based PV cells.


## 3. New-Fangled Emerging Technologies

### 3.1. Amalgam Cell

Both polycrystalline silicon (poly-Si, made up of many tiny crystals) and monocrystalline silicon (c-Si) are types of crystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the most widely utilised semiconducting material in solar cell manufacturing because to advancements in photovoltaic technology. These cells are a key component of the solar panels used in a photovoltaic system to convert sunlight into usable electricity [13, 15]. It has been contrived with a cell efficiency of 17.8. Amalgam cell merges a thin crystalline wafer caked with amorphous silicon benevolent concert in short luminosity and an intermediate temperature with an evidence contravention uppermost alteration efficiency of 25.6%. When imminent to carbon nanotube cell, it is a transfer performer material and it affords an excellent current. It is bent from a hexagonal lattice carbon, and it outcomes with a efficiency of 15%. Due to deficiency in competence, creation cost, and environmental features with some astral cell materials, researchers approach up with the novel scheme of dye-sensitised solar cell [13, 15]. Wide bandgap of the semiconductor equipments like zonic oxide by organice dyes delay the PV Process. Tandem cells are one of the new-fangled immerging technologies to amplify the competence of planetary modules. More PV Cells with Wide bandgap makes the PV spectrum with less efficiency.


## 3.1. Amalgam Cell

Both polycrystalline silicon (poly-Si, made up of many tiny crystals) and monocrystalline silicon (c-Si) are types of crystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the most widely utilised semiconducting material in solar cell manufacturing because to advancements in photovoltaic technology. These cells are a key component of the solar panels used in a photovoltaic system to convert sunlight into usable electricity [13, 15]. It has been contrived with a cell efficiency of 17.8. Amalgam cell merges a thin crystalline wafer caked with amorphous silicon benevolent concert in short luminosity and an intermediate temperature with an evidence contravention uppermost alteration efficiency of 25.6%. When imminent to carbon nanotube cell, it is a transfer performer material and it affords an excellent current. It is bent from a hexagonal lattice carbon, and it outcomes with a efficiency of 15%. Due to deficiency in competence, creation cost, and environmental features with some astral cell materials, researchers approach up with the novel scheme of dye-sensitised solar cell [13, 15]. Wide bandgap of the semiconductor equipments like zonic oxide by organice dyes delay the PV Process. Tandem cells are one of the new-fangled immerging technologies to amplify the competence of planetary modules. More PV Cells with Wide bandgap makes the PV spectrum with less efficiency.


## 4. Recent Technologies in Solar Photovoltaic Cells

Solar panels are usually hardened at about 77°F and are tempo to act upon at peak efficiency amid 59°F and 95°F. However, solar panels may get as hot as 149°F at some point in the summer. When the facade hotness of solar panels gets this lofty, solar panel efficiency gets declined. Moreover, the exact warmth of solar panels will depend on factors such as air hotness, geographic spot, level of direct sunlight, and roofing material. At Boston Solar, Massachusetts based uptown solar installer, with greater than 3,800 solar installations and including in spaces like the north coast, the south coast, and beyond. While designing and installing solar PV systems that maximize energy production, even when factors like warmth and shading threaten to challenge solar panel efficiency. Solar panels are made up of solar photovoltaic (PV) cells. The working of a solar energy system is reliant on the efficiency of the photovoltaic cells. These photovoltaic cells are made using silicon. Silicon is a semiconductor. Semiconductors have properties that descend between conductors and insulators. Since much of the sunlight faultless on cells becomes heat, accurate thermal management improves both efficiency and lifetime. A cell’s efficiency can be increased by diminishing the amount of light reflected away from the cell’s surface. For example, untreated silicon reproduces more than 30% of incident light. It has an electrical property that makes it conductive in one direction and insulating in the other. Today, most silicon-based solar cells can alter about 20 percent of the sunlight that smack them into serviceable solar energy, which has led to panels greater than 400 watts of power. Higher efficiency = more energy, so high-efficiency solar panels generally will produce more electricity. Solar cell researchers at NREL are also pursuing many new photovoltaic technologies such as solar cells made from organic materials, quantum dots, and hybrid organic-inorganic materials (it is also known as perovskites). These next-generation technologies may offer lower costs, greater ease of manufacture, or other benefits.


## 5. Leading PV Countries

Table1 indicates the comparison of semiconductor materials in worldwide countries’ efficiency. According to the International Energy Agency, the chief countries in conditions of fitting PV in the year 2014 were China, Japan, USA, Germany, and UK. Figure 8 represents the PV Installations in the year 2014 for different leading countries [13, 15, 16]. In addition to the Renewable energy and European PV Manufacturing Association, the highest countries for the year 2013 were China, Japan, Germany, and UK. These countries jointly accounted almost 70% of the world installation in the year 2014. However, USA is above China’s installation for PV semiconductor materials. It is worthwhile that Germany clutches the first position in the cumulative part of the materials, whereas the significant installationof PV Stations in the Year 2021 in Japan & China were being a remarkable comparing to German as shown in Figure 8.Table 1
Comparison of semiconductor materials in worldwide countries’ efficiency.
S. no.CountriesEfficiency (%)1China10.982Japan9.653U.K.2.54USA6.55Germany1.5Figure 8
PV installations in the year 2014 for different leading countries.


## 6. PV Electricity Fabrication in Foremost Countries

PV expertise is quickly increasing its donation to electricity and is radically mounting demand. Approximately 170 GW of PV is inaugurated by March 2015. It is fairly simple to measure the electricity manufacture of an entity PV plant, but a great deal that, they are the dominating country in the world [13, 17, 18]. It is difficult to compare the OV system installed in the different countries which involves many issues depending on the weather conditions. There may also be other issues such as building-integrated PV systems which can also collide the PV output systems [13, 19]. It can be finalized that Germany holds the first rank position in the electricity demand by solar PV in the year 2020 across 10% and 30% in the upcoming year 2030.


## 7. Conclusion

In every year, the worldwide energy utilization is mounting, and numerous special technologies are used to convene the energy command. Among one of the rising technologies, solar PV is rapidly growing and is becoming main stream in the world. The progressive enlargement of PV was put it into the expansion of renewable power sources. The leading countries UK, USA, Germany, China, and Japan are driving into policies of the semiconductor material and bring R&D to the market area. Though it can be said that PV has reached wide spread expansion to the whole countries, it has gained significant technology to numerous countries and plan for PV progress all over the world.



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