# Application of Nanoflexible Photoelectric Devices in Welding Tooling Equipment Systems

Authors: Wenping Tan; Honghua Liu; Hongmei Li; Shen Cao
Journal: Advances in Materials Science and Engineering
 (2022)

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## Abstract

With the continuous breakthrough of science and technology, all aspects related to science and technology are constantly updated and changing. Photoelectric devices, also known as photosensitive devices, work on principles based on the photoelectric effect. The application of photoelectric devices in our lives is also diverse. This paper aims to study the flexibility of nanophotoelectric devices, which is a new generation of photoelectric device product technology, making photoelectric devices have more outstanding utility compared with the past. In the traditional sense, photoelectric devices will have their own hardware defects, and the update of nanoflexible photoelectric device technology will solve the above shortcomings. The above breakthroughs in key technologies have improved the hardware of welding tooling in the industrial field. The technique of welding tooling is widely used in the industrial field. The introduction of nanoflexible photoelectric devices into the welding tooling can overcome the defects of conventional processes. This paper proposes the application of nanotechnology in the industrial field. A parameter testing system and a model of dynamic matrix predictive control are established to predict and control the parameters of the experiment throughout the process. The experimental object of this paper is nanoflexible optoelectronic devices; meanwhile, the concentration of nanomaterials in the nanophotoelectric device plays a decisive role in the efficiency of the device, then the final experimental results show that when the concentration of nanomaterials is 8.5∗ 10, the efficiency of the optoelectric components is the best of the four groups of experiments.


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## Body

## 1. Introduction

The research and development of nanoflexible photoelectric devices appear to follow the trend of intelligence in contemporary society. The intelligent equipment in today’s society has already belonged to the increase of blowout potential, and the requirements of intelligent equipment for its hardware are extremely high, which makes the emergence of nanoflexible photoelectric devices inevitable. Among them, it includes China’s industrial field and China’s vigorous development of infrastructure construction projects in recent years. Traditional equipment in the industrial field also needs to be updated [1]. This paper introduces nanoflexible photoelectric devices into the welding tooling equipment system in the industrial field, because the nano-optical device itself has better optical and electrical properties, giving them the opportunity to develop in a more intelligent direction.Compared with traditional photoelectric devices, nanodevices have more new device structures as well as the physical size characteristics. At the same time, nanoflexible optoelectronic devices contain all the advantages of traditional optoelectronic devices. This makes the prospect of nanodevices very broad. At the same time, with the vigorous development of domestic industry, technological renewal in the industrial field also needs to usher in continuous breakthroughs. The combined application of nanoflexible devices and welding tooling technology makes the development in the industrial field move towards a brighter road. Welding tooling skills in the industrial field are also based on flexible welding fittings. The two are used in relation to each other and have their points of mutual connection. This paper is based on the application of nanoflexible photoelectric devices in welding tooling technology.The demand for smart devices has prompted the continuous improvement of research on optoelectronic devices, and a large number of different researchers have carried out different research studies from different perspectives, making it fruitful. At the same time, the universality of welding tooling technology is now, and different researchers are also introducing different updated solutions for it. MA Kang and his team intensively explored the optical properties of MoS2/graphene-based patterns based on various cross-stacked photodetectors. The methods that they have investigated have broadened the pathway for transparent and flexible nanoelectronic devices based on two-dimensional materials for practical applications [2]. However, in addition to the mentioned research perspectives, MYe also summarized and discussed the advances in the holistic research of TMDC in a relevant way [3]. This is also a relatively novel angle, and this kind of research has made breakthroughs in related fields of technology and related hardware. In addition, C Rameshkumar explained the structural properties of pristine PMMA and PVDF films by means of a study for XRD [4]. S Zhang proposed a 4-in-1 electrical method based on outlier spectral mapping, and it was used for the preparation of optoelectronic devices, which makes the study of the method more concrete and realistic [5]. In a biochemical study, P Arunkumar reported a moisture-stable, red-emitting fluoride phosphor with an organic hydrophobic surface layer, and its preparation process is also closely related to the related use of optoelectronic devices [6]. A facile method for fabricating high-quality chalcogenide thin films and optoelectronic devices on paper by direct pen writing was also reported by Thang, which has led to technological innovation in the use of paper as well [7]. DV Pekur considered optimizing passive air system design for cooling high-power LED lamps based on heat pipes and cooling rings, which is an application in lamp innovation [8]. S. Eslami proposed friction stir welding for welding tooling and showed that it has become one of the most fascinating engineering disciplines today [9]. The research studies mentioned above provide different development ideas for the development of optoelectronic devices and the updating of welding tooling technology. The following are the innovations of this article.The innovation points of this paper are as follows: (1) The research of nanoflexible photoelectric devices is compared with that of traditional photoelectric devices, so as to highlight its technical breakthrough point and the change of device characteristics. (2) One of the highlights of this paper is to apply the flexible photoelectric devices prepared by nanotechnology to the welding and tooling equipment of the industrial field. The development of industry can be accompanied by the increasing development of science and technology, and it becomes increasingly powerful. The introduction of this combination makes the modernization of the industrial field also evident. (3) The application of flexible photoelectric devices in the industrial field belongs to the integration of disciplines, which can provide multiple ideas for the development of science and technology.


## 2. Application Technology of Nanoflexible Photoelectric Devices in Welder Installation

### 2.1. Physical Parameter Test System Construction of Nano-Optoelectronic Devices and Parameter Testing of Specific Devices

#### 2.1.1. Parameter Test of Nano-Optoelectronic Devices

With the increasing development of today’s science and technology, their performance and efficacy are also constantly improved and improved. In view of the problem of signal aging of photoelectric devices, researchers from various countries have proposed different solutions. China also offers different methods for solving these problems. The comparisons between several test systems are listed in Table1:Table 1
Comparison of the signal aging test systems of photoelectric devices.
Test object typeTest object size (mm)Light intensity (pe/s)Performance parametersPlanar MCP-PMT21.06000000Gain, quantum efficiency, dark count, detection efficiencySpherical MCP-PMT210.120000000Bulk resistance, gain, vacuumSpherical MCP-PMT220.320000000Gain, frequency response, transit timeSpherical dynode-PMT276.512000000Gain, postpulse, transit timeThe test method for signal aging of optoelectronic devices is to establish a signal aging model by irradiating the device [10]. The introduction of the Table 1 method is a model built to make corresponding solutions to the signal aging problem of photoelectric devices. The above data will be revised for the scientificity of the model.In addition, there are different monitoring systems for the equilibrium performance of photoelectric devices, as shown in Table2.Table 2
Comparison of the equilibrium monitoring system of photoelectric devices.
Test object typeTest object size (mm)Means of realizationPerformance parametersPlanar PMT36.6Moving light sourceQuantum efficiencyPlanar PMT52Moving light sourceQuantum efficiencySpherical PMT209.8Rotate PMTQuantum efficiencyThe comparison of the detection systems of the equilibrium performance of photoelectric devices in Table2 is realized by moving light sources, and the process is carried out for the time poles of different sizes of photoelectric devices [11]. It can be seen from the table that the advantages of the spherical PMT system are more obvious; however, the parameters in the above table are only tests of relatively small devices, and new methods remain to be explored for tests of large-sized photoelectric devices.Because photoelectric devices have their own unique physical characteristics, they have some electromagnetic performance. For devices with electromagnetic characteristics, the strength of the external magnetic field for the influence of components will have a greater correlation [12]. In response to this problem, the method of changing the external magnetic field was also tested, as shown in Table 3, and the related parameters are as follows.Table 3
Comparison of the test parameters of the magnetic field influence of photoelectric devices.
Test object typeTest object size (mm)Shielding measuresPerformance parametersDynode-PMT210.2U IronAnode performance parameters, position responseDynode-PMT210.2Helmholtz coilUniformity of gain and collection efficiencyDynode-PMT261.1Helmholtz coilAnode performance parameters, position responseMCP-PMT25.3Strong magnetic fieldGain, time-of-flight dispersion, detection efficiencyMCP-PMT62Strong magnetic fieldPosition response: Gain, time-of-flight discreteTable3 is also tested for relatively small photoelectric devices, and the shielding means used are also based on the strength simulation system considered established. It can be seen that the performance of the dynode-PMT system is better. For large photoelectric devices, geomagnetism is generally selected as the corresponding test means.


#### 2.1.2. Design Method of the Test System

The above method is only measured in some specific environments for the required parameters. Here, the required parameters will be integrated accordingly [13, 14]. For this purpose, corresponding systems will be constructed below based on the required performance parameters. Figure 1 shows the composition of the system.Figure 1
Overall structure diagram of the test system.The construction of the test system in Figure1 can realize the influence of magnetic fields on photoelectric devices, and the aging of the photoelectric device itself, the equilibrium of photoelectric devices and the performance parameters of related photoelectric devices. The advantage of this test system is that the collection of test data and their processing can be achieved. At the same time, the effective and timely processing of multiple types of data is realized so that the effectiveness of the data can be improved.


#### 2.1.3. Testing of the Performance Parameters of the Nano-LED

In addition, a hardware test structure system for detecting nano-LEDs is also constructed. Because LED equipment is widely used in the industrial field, the research on this basis is of great significance to this paper, and the required software is described below. Software that can run efficiently is based on the driver and the software itself [15]. The complete work flowchart is shown in Figure 2.Figure 2
LED software test system.The test data of the software system include the current size of the LED device when it is working, the intensity of the LED light emission, the range of the spectrum, and other device parameters [16]. In addition, the above system will also collect and analyze the data.


### 2.2. Signal Enhancement and Preparation Technology of Nanoflexible Optoelectronic Devices

#### 2.2.1. Design Principle of Nanoflexible Photoelectric Devices

Due to the large variety of performance parameters of flexible optoelectronic devices, it is necessary to convert the cathode and anode of optoelectronic devices in order to obtain the relevant parameters of the experiment. Therefore, it is necessary to detect optoelectronics escaping from the time pole and the anode to measure the relative detection efficiency [17]. The calculation formula (1) is as follows:(1)Q=∑a=a14096ftesta∑a=04096ftesta÷∑a=a24096frefa∑a=04096frefa.In the above formula, test represents the test parameter of the test sample, ref represents the test data of the reference sample, andQ represents the detection efficiency.Due to the particularity of the anode, it is the calculation of the gain of the optical electron beam escaping from the time pole of the photoelectric device next [18], whose formula is as follows:(2)Get=a4−a21.56e−19.The gain of photoelectric devices is related to the high pressure loaded by itself, and the appropriate degree of high pressure needs to be selected for specific testing.The energy resolution of photoelectric devices is also calculated as follows:(3)P=a7−a5/a6−a3.The following is the calculation of the ratio between the peak and the trough of the photovoltaic electron signal released by the photoelectric device:(4)LY=fa6fa4.The above formula is the calculation of different parameters of the photoelectric device, and the indicators involved are all related to the strength of the photoelectric signal, so as to pave the way for the following experimental part [19].The following is an introduction to the test methods for the quantum efficiency of optoelectronic devices. Because quantum efficiency is an important indicator of the uniformity of the time pole of photoelectric devices, this method can make the test of quantum efficiency more perfect. Its specific test method is shown in Figure3.Figure 3
Schematic diagram of the quantum efficiency test of photoelectric devices.From Figure3, it is known that the test of this method requires power supply, separation equipment, and ammeter, and the calculation formula for the sample to be tested is as follows:(5)QEa=ia/ib∗QEb.The above formulaQEa represents the quantum efficiency. Through the above schematic diagram and calculation formula, we can know the quantum efficiency of optoelectronic devices [20].Because the real working environment of photoelectric devices has Earth’s magnetic field, it is necessary to consider the influence of the magnetic field on the signal of photoelectric devices to design shielding equipment of the magnetic field, so as to weaken or even eliminate the impact of the magnetic field on photoelectric devices. The first is to set the magnetic field in the environment on a constant magnetic field [21], and the specific process involves the following formula calculation:(6)B=λM.In the above equation, B indicates the induction strength of the magnetic field,λ indicates the magnetic conductivity, and M represents the strength of the magnetic field.Regarding the cohesive force between the two magnetic media dividing interfaces, the calculation formula is as follows [22].(7)Ban=BbnMal=Mbl.In the above equation,n represents the normal component, t represents the tangent component, Ban represents the magnetic induction strength of sample a, Bbn represents the magnetic induction strength of sample b, Mal represents the magnetic field strength of sample a, and Mbl represents the magnetic field strength of b.The law of refraction of electromagnetic fields can be described in the following expression [23]:(8)tanθatanθb=λaλb.In the above formula,θais the angle between the magnetic field and the normal component of sample a, θb is the angle between the magnetic field and the normal component of sample b, λa is the permeability of sample a, and λb is the permeability of sample b.The above is a discussion of some parameters of optoelectronic devices that affect the geomagnetic field [24]. Figure 4 shows a schematic diagram of a hardware system shielding the geomagnetic field:Figure 4
Geomagnetic field analog shielding hardware system.The hardware system of Figure4 is designed to reduce the impact of the magnetic field on the photoelectric device, so as to improve the reliability of the test, and the system can make the signal of the optoelectronic device better guaranteed. In addition, the above hardware system also uses a chassis, signal generator, and other detection equipment [25]. This is the detection method for primary factors affecting photoelectric devices.


#### 2.2.2. Model Establishment and Application of Dynamic Matrix Prediction and Control

In addition, for the abovementioned hardware system, the dynamic matrix predictive control model is introduced here. The introduction of this model is conducive to connecting nanoflexible photoelectric devices with welding tooling in the industrial field. The model is a nonparametric model that can be achieved by the input for a specific increase to obtain the output of future moments. The corresponding calculation formula is as follows:(9)xn=η+Mη=x0η+Mη+QMΔλη.In the above equation,M is the time domain length of the model, QM represents the parameters, including the corresponding values of the actual measure and prediction, and Δληis the control increment added to the system. The above expression is based on the case where the control increment is constant, and if the time varies, then the formula is as follows:(10)Xnη+1=X0η+1+Δλη.The above formula is a prediction model. The following is the correlation optimization for this model. Due to the advantages in the nanoenvironment, the selection of optimization indicators needs to be valued by adding a certain factor. The additional factor selected here is the intensity of the current, and the value calculation formula of the optimization index is as follows:(11)minDη=∑i=1QYivη+i−Xmη+iη2+∑I=1PtIΔλ2η+I−1.The sumYi and tlof the above formula represents the weighting coefficient, the former represents the suppression of error, and the latter represents the suppression of change. To optimize the above process, we use the following calculation formula:(12)XQPη=XQ0η+AΔTPη.The expression of performance indicators can be expressed by the following formula:(13)minDη=Qvpη−xqpηQP2+QΔTPηQa.Integrating the above process yields the following optimization formula:(14)ΔTλ=LRΔTPλ=fRvqη−xq0η.The deduction process for the optimization of the prediction system model is such as described above. Next, the model is also corrected, and by applying a parameter variable at some moment, the value of the output predictor can be calculated by the following equation:(15)xλM1=xM0λ+cΔtλ.Formula (15) is the normal calculation process of the model and does not consider unknown interference factors. Because when some factors outside the control occur, such as parameter mismatch pairing, there will be a deviation between the output result and the actual value. If the formula is modified, it can be expressed as follows:(16)xcorλ+1=xcorλ+1λ,G,xcorλ+MλR.The above formula includes the error tolerance rate of the error, which can make the algorithm of the whole model more complete. For the introduction of the above model and algorithm, the signal problem of flexible photoelectric devices can be effectively handled in this study.


#### 2.2.3. Preparation of Nanoflexible Optoelectronic Devices

The preparation of nanoflexible photoelectric devices requires the compound of a nanopolymer, and this step is performed to replace traditional silicon compounds with flexible nanomaterials. Its advantage is that it enables photoelectric devices to achieve stretching in the three-dimensional direction. It has a more powerful support role than the traditional two-dimensional direction. For material selection, polyimide and cyclohexasiloxane were used. Table4 shows the physicochemical parameters of polyimide.Table 4
Physicochemical parameters of polyimide.
ProjectHomobenzene polyimidePolybismaleimidePolyimideSpecific heat capacity1.121.221.13Thermal conductivity1.12.11.1Coefficient of linear expansion62.55.7Molding shrinkage0.11>0.150.2Oxygen index424545Flow temperature>360>250>335Thermal deformation temperature365310220Dielectric constant3.2∼3.54.1∼4.73.1∼3.5Volume resistivity10^1610^1510^15Polyimide is chosen here because this polymer material can provide a better guarantee for the use of flexible electrons, so as to extend the use time of flexible photoelectric devices. The preparation of flexible photoelectric periods is based on nanostructures where the composite material of nanosilver and nanocarbon is used. The specific preparation process is shown in Figure5.Figure 5
Preparation process of nanoscale flexible composites.In the preparation of the photoelectric device in Figure5, attention should be paid to the thickness of different colloids, and the amount of the modified solution should be increased or decreased according to the amount of the nanocomposite. The advantage of the above process is that the materials needed for the experiment can be obtained quickly. For the preparation of nanoflexible photoelectric devices, the nanoflexible composite from the above process is used and the sol-gel method is used. The whole process of the sol-gel method is shown in Figure 6.Figure 6
Flowchart of the sol-gel method.The sol gel method in Figure6 has the ability to prepare nanoscale materials in a short period of time, and the operation process does not require high treatment temperature, which can be made as desired. At the same time, it requires a high purity of raw materials, and the reaction legacy will produce some organic products that are not friendly to humans and nature. In sol-gel preparation, different application methods are used, and some specific reagents are required. Their functions and types are shown in Table 5.Table 5
Required reagents and their utility.
Reagent nameGradeFunctionZinc acetate dihydrateAnalytical purityMetal precursorEthylene glycol methyl etherAnalytical puritySolventMonoethanolamineAnalytical purityStabilizerAcetoneAnalytical purityCleaning substrateTrichloroethyleneAnalytical purityCleaning substrateAbsolute ethanolAnalytical purityCleaning substrateThe reagents in Table5 are required for the entire optoelectronic device preparation process and will be used for the entire preparation process.


### 2.3. Application of Nanoflexible Optoelectronic Devices in Mechanical Welding Tooling

#### 2.3.1. Detection Method for the Performance of Nanoflexible Photoelectric Devices

Welded tooling is a flexible mechanical fixture, which can be divided into the general type and special type, and the latter is widely used in mechanical equipment manufacturing and modular combinations. With the growing strength of China, it has more advantages than traditional cutting tooling. The preparation of nano-optoelectronic devices described above needs to be tested for their use in welder assembly. The first is the use of scanning electron microscopy, and the schematic diagram is shown in Figure7.Figure 7
Schematic diagram of the scanning electron microscope.As can be seen from Figure7, the main structure of the device enables the device to detect a variety of signals, can also receive a variety of signals, and has the ability of imaging, so that the onlookers form information about the nanophotoelectric device. In addition, the light absorption process of spot welding tooling should be detected. The light absorption process of spot welding tooling can be expressed by the following formula:(17)klky=−μl.In the above formula,μ is the proportion coefficient, and the above light absorption process is closely related to the refractive index, light absorption coefficient, and extinction technology of the device.


#### 2.3.2. Detection Method for Nano flexible Photoelectric Devices Installed by Welders

The application of this method is based on the properties of photoelectric devices, so the Hall effect principle introduced is derived from the influence of magnetic field on charged particles. First, the detection of external quantum efficiency, which is one of the necessary detections of photoelectric devices, can be expressed in the following formula:(18)μ=QK/eKoPT/HV.In the above formula,Qkis the size of the photocurrent, e is the amount of the unit electron, and HV is the size of the energy of the light particle. Then, the calculation of the detection rate of photoelectric devices is expressed as follows:(19)P=B2QIc.In the above formula, B indicates the echo degree of the photodetector,Q indicates how much is charged by the electron, and Ic indicates the density of the dark current. Finally, the response line is expressed as follows:(20)I=Zaexp−mλ1+Zbexp−mλ2+I1.The above methods are the specific detection methods and algorithm introduction of nanoflexible photoelectric devices installed in welding. Relevant experiments are performed below for the above methods.


## 2.1. Physical Parameter Test System Construction of Nano-Optoelectronic Devices and Parameter Testing of Specific Devices

### 2.1.1. Parameter Test of Nano-Optoelectronic Devices

With the increasing development of today’s science and technology, their performance and efficacy are also constantly improved and improved. In view of the problem of signal aging of photoelectric devices, researchers from various countries have proposed different solutions. China also offers different methods for solving these problems. The comparisons between several test systems are listed in Table1:Table 1
Comparison of the signal aging test systems of photoelectric devices.
Test object typeTest object size (mm)Light intensity (pe/s)Performance parametersPlanar MCP-PMT21.06000000Gain, quantum efficiency, dark count, detection efficiencySpherical MCP-PMT210.120000000Bulk resistance, gain, vacuumSpherical MCP-PMT220.320000000Gain, frequency response, transit timeSpherical dynode-PMT276.512000000Gain, postpulse, transit timeThe test method for signal aging of optoelectronic devices is to establish a signal aging model by irradiating the device [10]. The introduction of the Table 1 method is a model built to make corresponding solutions to the signal aging problem of photoelectric devices. The above data will be revised for the scientificity of the model.In addition, there are different monitoring systems for the equilibrium performance of photoelectric devices, as shown in Table2.Table 2
Comparison of the equilibrium monitoring system of photoelectric devices.
Test object typeTest object size (mm)Means of realizationPerformance parametersPlanar PMT36.6Moving light sourceQuantum efficiencyPlanar PMT52Moving light sourceQuantum efficiencySpherical PMT209.8Rotate PMTQuantum efficiencyThe comparison of the detection systems of the equilibrium performance of photoelectric devices in Table2 is realized by moving light sources, and the process is carried out for the time poles of different sizes of photoelectric devices [11]. It can be seen from the table that the advantages of the spherical PMT system are more obvious; however, the parameters in the above table are only tests of relatively small devices, and new methods remain to be explored for tests of large-sized photoelectric devices.Because photoelectric devices have their own unique physical characteristics, they have some electromagnetic performance. For devices with electromagnetic characteristics, the strength of the external magnetic field for the influence of components will have a greater correlation [12]. In response to this problem, the method of changing the external magnetic field was also tested, as shown in Table 3, and the related parameters are as follows.Table 3
Comparison of the test parameters of the magnetic field influence of photoelectric devices.
Test object typeTest object size (mm)Shielding measuresPerformance parametersDynode-PMT210.2U IronAnode performance parameters, position responseDynode-PMT210.2Helmholtz coilUniformity of gain and collection efficiencyDynode-PMT261.1Helmholtz coilAnode performance parameters, position responseMCP-PMT25.3Strong magnetic fieldGain, time-of-flight dispersion, detection efficiencyMCP-PMT62Strong magnetic fieldPosition response: Gain, time-of-flight discreteTable3 is also tested for relatively small photoelectric devices, and the shielding means used are also based on the strength simulation system considered established. It can be seen that the performance of the dynode-PMT system is better. For large photoelectric devices, geomagnetism is generally selected as the corresponding test means.


### 2.1.2. Design Method of the Test System

The above method is only measured in some specific environments for the required parameters. Here, the required parameters will be integrated accordingly [13, 14]. For this purpose, corresponding systems will be constructed below based on the required performance parameters. Figure 1 shows the composition of the system.Figure 1
Overall structure diagram of the test system.The construction of the test system in Figure1 can realize the influence of magnetic fields on photoelectric devices, and the aging of the photoelectric device itself, the equilibrium of photoelectric devices and the performance parameters of related photoelectric devices. The advantage of this test system is that the collection of test data and their processing can be achieved. At the same time, the effective and timely processing of multiple types of data is realized so that the effectiveness of the data can be improved.


### 2.1.3. Testing of the Performance Parameters of the Nano-LED

In addition, a hardware test structure system for detecting nano-LEDs is also constructed. Because LED equipment is widely used in the industrial field, the research on this basis is of great significance to this paper, and the required software is described below. Software that can run efficiently is based on the driver and the software itself [15]. The complete work flowchart is shown in Figure 2.Figure 2
LED software test system.The test data of the software system include the current size of the LED device when it is working, the intensity of the LED light emission, the range of the spectrum, and other device parameters [16]. In addition, the above system will also collect and analyze the data.


## 2.1.1. Parameter Test of Nano-Optoelectronic Devices

With the increasing development of today’s science and technology, their performance and efficacy are also constantly improved and improved. In view of the problem of signal aging of photoelectric devices, researchers from various countries have proposed different solutions. China also offers different methods for solving these problems. The comparisons between several test systems are listed in Table1:Table 1
Comparison of the signal aging test systems of photoelectric devices.
Test object typeTest object size (mm)Light intensity (pe/s)Performance parametersPlanar MCP-PMT21.06000000Gain, quantum efficiency, dark count, detection efficiencySpherical MCP-PMT210.120000000Bulk resistance, gain, vacuumSpherical MCP-PMT220.320000000Gain, frequency response, transit timeSpherical dynode-PMT276.512000000Gain, postpulse, transit timeThe test method for signal aging of optoelectronic devices is to establish a signal aging model by irradiating the device [10]. The introduction of the Table 1 method is a model built to make corresponding solutions to the signal aging problem of photoelectric devices. The above data will be revised for the scientificity of the model.In addition, there are different monitoring systems for the equilibrium performance of photoelectric devices, as shown in Table2.Table 2
Comparison of the equilibrium monitoring system of photoelectric devices.
Test object typeTest object size (mm)Means of realizationPerformance parametersPlanar PMT36.6Moving light sourceQuantum efficiencyPlanar PMT52Moving light sourceQuantum efficiencySpherical PMT209.8Rotate PMTQuantum efficiencyThe comparison of the detection systems of the equilibrium performance of photoelectric devices in Table2 is realized by moving light sources, and the process is carried out for the time poles of different sizes of photoelectric devices [11]. It can be seen from the table that the advantages of the spherical PMT system are more obvious; however, the parameters in the above table are only tests of relatively small devices, and new methods remain to be explored for tests of large-sized photoelectric devices.Because photoelectric devices have their own unique physical characteristics, they have some electromagnetic performance. For devices with electromagnetic characteristics, the strength of the external magnetic field for the influence of components will have a greater correlation [12]. In response to this problem, the method of changing the external magnetic field was also tested, as shown in Table 3, and the related parameters are as follows.Table 3
Comparison of the test parameters of the magnetic field influence of photoelectric devices.
Test object typeTest object size (mm)Shielding measuresPerformance parametersDynode-PMT210.2U IronAnode performance parameters, position responseDynode-PMT210.2Helmholtz coilUniformity of gain and collection efficiencyDynode-PMT261.1Helmholtz coilAnode performance parameters, position responseMCP-PMT25.3Strong magnetic fieldGain, time-of-flight dispersion, detection efficiencyMCP-PMT62Strong magnetic fieldPosition response: Gain, time-of-flight discreteTable3 is also tested for relatively small photoelectric devices, and the shielding means used are also based on the strength simulation system considered established. It can be seen that the performance of the dynode-PMT system is better. For large photoelectric devices, geomagnetism is generally selected as the corresponding test means.


## 2.1.2. Design Method of the Test System

The above method is only measured in some specific environments for the required parameters. Here, the required parameters will be integrated accordingly [13, 14]. For this purpose, corresponding systems will be constructed below based on the required performance parameters. Figure 1 shows the composition of the system.Figure 1
Overall structure diagram of the test system.The construction of the test system in Figure1 can realize the influence of magnetic fields on photoelectric devices, and the aging of the photoelectric device itself, the equilibrium of photoelectric devices and the performance parameters of related photoelectric devices. The advantage of this test system is that the collection of test data and their processing can be achieved. At the same time, the effective and timely processing of multiple types of data is realized so that the effectiveness of the data can be improved.


## 2.1.3. Testing of the Performance Parameters of the Nano-LED

In addition, a hardware test structure system for detecting nano-LEDs is also constructed. Because LED equipment is widely used in the industrial field, the research on this basis is of great significance to this paper, and the required software is described below. Software that can run efficiently is based on the driver and the software itself [15]. The complete work flowchart is shown in Figure 2.Figure 2
LED software test system.The test data of the software system include the current size of the LED device when it is working, the intensity of the LED light emission, the range of the spectrum, and other device parameters [16]. In addition, the above system will also collect and analyze the data.


## 2.2. Signal Enhancement and Preparation Technology of Nanoflexible Optoelectronic Devices

### 2.2.1. Design Principle of Nanoflexible Photoelectric Devices

Due to the large variety of performance parameters of flexible optoelectronic devices, it is necessary to convert the cathode and anode of optoelectronic devices in order to obtain the relevant parameters of the experiment. Therefore, it is necessary to detect optoelectronics escaping from the time pole and the anode to measure the relative detection efficiency [17]. The calculation formula (1) is as follows:(1)Q=∑a=a14096ftesta∑a=04096ftesta÷∑a=a24096frefa∑a=04096frefa.In the above formula, test represents the test parameter of the test sample, ref represents the test data of the reference sample, andQ represents the detection efficiency.Due to the particularity of the anode, it is the calculation of the gain of the optical electron beam escaping from the time pole of the photoelectric device next [18], whose formula is as follows:(2)Get=a4−a21.56e−19.The gain of photoelectric devices is related to the high pressure loaded by itself, and the appropriate degree of high pressure needs to be selected for specific testing.The energy resolution of photoelectric devices is also calculated as follows:(3)P=a7−a5/a6−a3.The following is the calculation of the ratio between the peak and the trough of the photovoltaic electron signal released by the photoelectric device:(4)LY=fa6fa4.The above formula is the calculation of different parameters of the photoelectric device, and the indicators involved are all related to the strength of the photoelectric signal, so as to pave the way for the following experimental part [19].The following is an introduction to the test methods for the quantum efficiency of optoelectronic devices. Because quantum efficiency is an important indicator of the uniformity of the time pole of photoelectric devices, this method can make the test of quantum efficiency more perfect. Its specific test method is shown in Figure3.Figure 3
Schematic diagram of the quantum efficiency test of photoelectric devices.From Figure3, it is known that the test of this method requires power supply, separation equipment, and ammeter, and the calculation formula for the sample to be tested is as follows:(5)QEa=ia/ib∗QEb.The above formulaQEa represents the quantum efficiency. Through the above schematic diagram and calculation formula, we can know the quantum efficiency of optoelectronic devices [20].Because the real working environment of photoelectric devices has Earth’s magnetic field, it is necessary to consider the influence of the magnetic field on the signal of photoelectric devices to design shielding equipment of the magnetic field, so as to weaken or even eliminate the impact of the magnetic field on photoelectric devices. The first is to set the magnetic field in the environment on a constant magnetic field [21], and the specific process involves the following formula calculation:(6)B=λM.In the above equation, B indicates the induction strength of the magnetic field,λ indicates the magnetic conductivity, and M represents the strength of the magnetic field.Regarding the cohesive force between the two magnetic media dividing interfaces, the calculation formula is as follows [22].(7)Ban=BbnMal=Mbl.In the above equation,n represents the normal component, t represents the tangent component, Ban represents the magnetic induction strength of sample a, Bbn represents the magnetic induction strength of sample b, Mal represents the magnetic field strength of sample a, and Mbl represents the magnetic field strength of b.The law of refraction of electromagnetic fields can be described in the following expression [23]:(8)tanθatanθb=λaλb.In the above formula,θais the angle between the magnetic field and the normal component of sample a, θb is the angle between the magnetic field and the normal component of sample b, λa is the permeability of sample a, and λb is the permeability of sample b.The above is a discussion of some parameters of optoelectronic devices that affect the geomagnetic field [24]. Figure 4 shows a schematic diagram of a hardware system shielding the geomagnetic field:Figure 4
Geomagnetic field analog shielding hardware system.The hardware system of Figure4 is designed to reduce the impact of the magnetic field on the photoelectric device, so as to improve the reliability of the test, and the system can make the signal of the optoelectronic device better guaranteed. In addition, the above hardware system also uses a chassis, signal generator, and other detection equipment [25]. This is the detection method for primary factors affecting photoelectric devices.


### 2.2.2. Model Establishment and Application of Dynamic Matrix Prediction and Control

In addition, for the abovementioned hardware system, the dynamic matrix predictive control model is introduced here. The introduction of this model is conducive to connecting nanoflexible photoelectric devices with welding tooling in the industrial field. The model is a nonparametric model that can be achieved by the input for a specific increase to obtain the output of future moments. The corresponding calculation formula is as follows:(9)xn=η+Mη=x0η+Mη+QMΔλη.In the above equation,M is the time domain length of the model, QM represents the parameters, including the corresponding values of the actual measure and prediction, and Δληis the control increment added to the system. The above expression is based on the case where the control increment is constant, and if the time varies, then the formula is as follows:(10)Xnη+1=X0η+1+Δλη.The above formula is a prediction model. The following is the correlation optimization for this model. Due to the advantages in the nanoenvironment, the selection of optimization indicators needs to be valued by adding a certain factor. The additional factor selected here is the intensity of the current, and the value calculation formula of the optimization index is as follows:(11)minDη=∑i=1QYivη+i−Xmη+iη2+∑I=1PtIΔλ2η+I−1.The sumYi and tlof the above formula represents the weighting coefficient, the former represents the suppression of error, and the latter represents the suppression of change. To optimize the above process, we use the following calculation formula:(12)XQPη=XQ0η+AΔTPη.The expression of performance indicators can be expressed by the following formula:(13)minDη=Qvpη−xqpηQP2+QΔTPηQa.Integrating the above process yields the following optimization formula:(14)ΔTλ=LRΔTPλ=fRvqη−xq0η.The deduction process for the optimization of the prediction system model is such as described above. Next, the model is also corrected, and by applying a parameter variable at some moment, the value of the output predictor can be calculated by the following equation:(15)xλM1=xM0λ+cΔtλ.Formula (15) is the normal calculation process of the model and does not consider unknown interference factors. Because when some factors outside the control occur, such as parameter mismatch pairing, there will be a deviation between the output result and the actual value. If the formula is modified, it can be expressed as follows:(16)xcorλ+1=xcorλ+1λ,G,xcorλ+MλR.The above formula includes the error tolerance rate of the error, which can make the algorithm of the whole model more complete. For the introduction of the above model and algorithm, the signal problem of flexible photoelectric devices can be effectively handled in this study.


### 2.2.3. Preparation of Nanoflexible Optoelectronic Devices

The preparation of nanoflexible photoelectric devices requires the compound of a nanopolymer, and this step is performed to replace traditional silicon compounds with flexible nanomaterials. Its advantage is that it enables photoelectric devices to achieve stretching in the three-dimensional direction. It has a more powerful support role than the traditional two-dimensional direction. For material selection, polyimide and cyclohexasiloxane were used. Table4 shows the physicochemical parameters of polyimide.Table 4
Physicochemical parameters of polyimide.
ProjectHomobenzene polyimidePolybismaleimidePolyimideSpecific heat capacity1.121.221.13Thermal conductivity1.12.11.1Coefficient of linear expansion62.55.7Molding shrinkage0.11>0.150.2Oxygen index424545Flow temperature>360>250>335Thermal deformation temperature365310220Dielectric constant3.2∼3.54.1∼4.73.1∼3.5Volume resistivity10^1610^1510^15Polyimide is chosen here because this polymer material can provide a better guarantee for the use of flexible electrons, so as to extend the use time of flexible photoelectric devices. The preparation of flexible photoelectric periods is based on nanostructures where the composite material of nanosilver and nanocarbon is used. The specific preparation process is shown in Figure5.Figure 5
Preparation process of nanoscale flexible composites.In the preparation of the photoelectric device in Figure5, attention should be paid to the thickness of different colloids, and the amount of the modified solution should be increased or decreased according to the amount of the nanocomposite. The advantage of the above process is that the materials needed for the experiment can be obtained quickly. For the preparation of nanoflexible photoelectric devices, the nanoflexible composite from the above process is used and the sol-gel method is used. The whole process of the sol-gel method is shown in Figure 6.Figure 6
Flowchart of the sol-gel method.The sol gel method in Figure6 has the ability to prepare nanoscale materials in a short period of time, and the operation process does not require high treatment temperature, which can be made as desired. At the same time, it requires a high purity of raw materials, and the reaction legacy will produce some organic products that are not friendly to humans and nature. In sol-gel preparation, different application methods are used, and some specific reagents are required. Their functions and types are shown in Table 5.Table 5
Required reagents and their utility.
Reagent nameGradeFunctionZinc acetate dihydrateAnalytical purityMetal precursorEthylene glycol methyl etherAnalytical puritySolventMonoethanolamineAnalytical purityStabilizerAcetoneAnalytical purityCleaning substrateTrichloroethyleneAnalytical purityCleaning substrateAbsolute ethanolAnalytical purityCleaning substrateThe reagents in Table5 are required for the entire optoelectronic device preparation process and will be used for the entire preparation process.


## 2.2.1. Design Principle of Nanoflexible Photoelectric Devices

Due to the large variety of performance parameters of flexible optoelectronic devices, it is necessary to convert the cathode and anode of optoelectronic devices in order to obtain the relevant parameters of the experiment. Therefore, it is necessary to detect optoelectronics escaping from the time pole and the anode to measure the relative detection efficiency [17]. The calculation formula (1) is as follows:(1)Q=∑a=a14096ftesta∑a=04096ftesta÷∑a=a24096frefa∑a=04096frefa.In the above formula, test represents the test parameter of the test sample, ref represents the test data of the reference sample, andQ represents the detection efficiency.Due to the particularity of the anode, it is the calculation of the gain of the optical electron beam escaping from the time pole of the photoelectric device next [18], whose formula is as follows:(2)Get=a4−a21.56e−19.The gain of photoelectric devices is related to the high pressure loaded by itself, and the appropriate degree of high pressure needs to be selected for specific testing.The energy resolution of photoelectric devices is also calculated as follows:(3)P=a7−a5/a6−a3.The following is the calculation of the ratio between the peak and the trough of the photovoltaic electron signal released by the photoelectric device:(4)LY=fa6fa4.The above formula is the calculation of different parameters of the photoelectric device, and the indicators involved are all related to the strength of the photoelectric signal, so as to pave the way for the following experimental part [19].The following is an introduction to the test methods for the quantum efficiency of optoelectronic devices. Because quantum efficiency is an important indicator of the uniformity of the time pole of photoelectric devices, this method can make the test of quantum efficiency more perfect. Its specific test method is shown in Figure3.Figure 3
Schematic diagram of the quantum efficiency test of photoelectric devices.From Figure3, it is known that the test of this method requires power supply, separation equipment, and ammeter, and the calculation formula for the sample to be tested is as follows:(5)QEa=ia/ib∗QEb.The above formulaQEa represents the quantum efficiency. Through the above schematic diagram and calculation formula, we can know the quantum efficiency of optoelectronic devices [20].Because the real working environment of photoelectric devices has Earth’s magnetic field, it is necessary to consider the influence of the magnetic field on the signal of photoelectric devices to design shielding equipment of the magnetic field, so as to weaken or even eliminate the impact of the magnetic field on photoelectric devices. The first is to set the magnetic field in the environment on a constant magnetic field [21], and the specific process involves the following formula calculation:(6)B=λM.In the above equation, B indicates the induction strength of the magnetic field,λ indicates the magnetic conductivity, and M represents the strength of the magnetic field.Regarding the cohesive force between the two magnetic media dividing interfaces, the calculation formula is as follows [22].(7)Ban=BbnMal=Mbl.In the above equation,n represents the normal component, t represents the tangent component, Ban represents the magnetic induction strength of sample a, Bbn represents the magnetic induction strength of sample b, Mal represents the magnetic field strength of sample a, and Mbl represents the magnetic field strength of b.The law of refraction of electromagnetic fields can be described in the following expression [23]:(8)tanθatanθb=λaλb.In the above formula,θais the angle between the magnetic field and the normal component of sample a, θb is the angle between the magnetic field and the normal component of sample b, λa is the permeability of sample a, and λb is the permeability of sample b.The above is a discussion of some parameters of optoelectronic devices that affect the geomagnetic field [24]. Figure 4 shows a schematic diagram of a hardware system shielding the geomagnetic field:Figure 4
Geomagnetic field analog shielding hardware system.The hardware system of Figure4 is designed to reduce the impact of the magnetic field on the photoelectric device, so as to improve the reliability of the test, and the system can make the signal of the optoelectronic device better guaranteed. In addition, the above hardware system also uses a chassis, signal generator, and other detection equipment [25]. This is the detection method for primary factors affecting photoelectric devices.


## 2.2.2. Model Establishment and Application of Dynamic Matrix Prediction and Control

In addition, for the abovementioned hardware system, the dynamic matrix predictive control model is introduced here. The introduction of this model is conducive to connecting nanoflexible photoelectric devices with welding tooling in the industrial field. The model is a nonparametric model that can be achieved by the input for a specific increase to obtain the output of future moments. The corresponding calculation formula is as follows:(9)xn=η+Mη=x0η+Mη+QMΔλη.In the above equation,M is the time domain length of the model, QM represents the parameters, including the corresponding values of the actual measure and prediction, and Δληis the control increment added to the system. The above expression is based on the case where the control increment is constant, and if the time varies, then the formula is as follows:(10)Xnη+1=X0η+1+Δλη.The above formula is a prediction model. The following is the correlation optimization for this model. Due to the advantages in the nanoenvironment, the selection of optimization indicators needs to be valued by adding a certain factor. The additional factor selected here is the intensity of the current, and the value calculation formula of the optimization index is as follows:(11)minDη=∑i=1QYivη+i−Xmη+iη2+∑I=1PtIΔλ2η+I−1.The sumYi and tlof the above formula represents the weighting coefficient, the former represents the suppression of error, and the latter represents the suppression of change. To optimize the above process, we use the following calculation formula:(12)XQPη=XQ0η+AΔTPη.The expression of performance indicators can be expressed by the following formula:(13)minDη=Qvpη−xqpηQP2+QΔTPηQa.Integrating the above process yields the following optimization formula:(14)ΔTλ=LRΔTPλ=fRvqη−xq0η.The deduction process for the optimization of the prediction system model is such as described above. Next, the model is also corrected, and by applying a parameter variable at some moment, the value of the output predictor can be calculated by the following equation:(15)xλM1=xM0λ+cΔtλ.Formula (15) is the normal calculation process of the model and does not consider unknown interference factors. Because when some factors outside the control occur, such as parameter mismatch pairing, there will be a deviation between the output result and the actual value. If the formula is modified, it can be expressed as follows:(16)xcorλ+1=xcorλ+1λ,G,xcorλ+MλR.The above formula includes the error tolerance rate of the error, which can make the algorithm of the whole model more complete. For the introduction of the above model and algorithm, the signal problem of flexible photoelectric devices can be effectively handled in this study.


## 2.2.3. Preparation of Nanoflexible Optoelectronic Devices

The preparation of nanoflexible photoelectric devices requires the compound of a nanopolymer, and this step is performed to replace traditional silicon compounds with flexible nanomaterials. Its advantage is that it enables photoelectric devices to achieve stretching in the three-dimensional direction. It has a more powerful support role than the traditional two-dimensional direction. For material selection, polyimide and cyclohexasiloxane were used. Table4 shows the physicochemical parameters of polyimide.Table 4
Physicochemical parameters of polyimide.
ProjectHomobenzene polyimidePolybismaleimidePolyimideSpecific heat capacity1.121.221.13Thermal conductivity1.12.11.1Coefficient of linear expansion62.55.7Molding shrinkage0.11>0.150.2Oxygen index424545Flow temperature>360>250>335Thermal deformation temperature365310220Dielectric constant3.2∼3.54.1∼4.73.1∼3.5Volume resistivity10^1610^1510^15Polyimide is chosen here because this polymer material can provide a better guarantee for the use of flexible electrons, so as to extend the use time of flexible photoelectric devices. The preparation of flexible photoelectric periods is based on nanostructures where the composite material of nanosilver and nanocarbon is used. The specific preparation process is shown in Figure5.Figure 5
Preparation process of nanoscale flexible composites.In the preparation of the photoelectric device in Figure5, attention should be paid to the thickness of different colloids, and the amount of the modified solution should be increased or decreased according to the amount of the nanocomposite. The advantage of the above process is that the materials needed for the experiment can be obtained quickly. For the preparation of nanoflexible photoelectric devices, the nanoflexible composite from the above process is used and the sol-gel method is used. The whole process of the sol-gel method is shown in Figure 6.Figure 6
Flowchart of the sol-gel method.The sol gel method in Figure6 has the ability to prepare nanoscale materials in a short period of time, and the operation process does not require high treatment temperature, which can be made as desired. At the same time, it requires a high purity of raw materials, and the reaction legacy will produce some organic products that are not friendly to humans and nature. In sol-gel preparation, different application methods are used, and some specific reagents are required. Their functions and types are shown in Table 5.Table 5
Required reagents and their utility.
Reagent nameGradeFunctionZinc acetate dihydrateAnalytical purityMetal precursorEthylene glycol methyl etherAnalytical puritySolventMonoethanolamineAnalytical purityStabilizerAcetoneAnalytical purityCleaning substrateTrichloroethyleneAnalytical purityCleaning substrateAbsolute ethanolAnalytical purityCleaning substrateThe reagents in Table5 are required for the entire optoelectronic device preparation process and will be used for the entire preparation process.


## 2.3. Application of Nanoflexible Optoelectronic Devices in Mechanical Welding Tooling

### 2.3.1. Detection Method for the Performance of Nanoflexible Photoelectric Devices

Welded tooling is a flexible mechanical fixture, which can be divided into the general type and special type, and the latter is widely used in mechanical equipment manufacturing and modular combinations. With the growing strength of China, it has more advantages than traditional cutting tooling. The preparation of nano-optoelectronic devices described above needs to be tested for their use in welder assembly. The first is the use of scanning electron microscopy, and the schematic diagram is shown in Figure7.Figure 7
Schematic diagram of the scanning electron microscope.As can be seen from Figure7, the main structure of the device enables the device to detect a variety of signals, can also receive a variety of signals, and has the ability of imaging, so that the onlookers form information about the nanophotoelectric device. In addition, the light absorption process of spot welding tooling should be detected. The light absorption process of spot welding tooling can be expressed by the following formula:(17)klky=−μl.In the above formula,μ is the proportion coefficient, and the above light absorption process is closely related to the refractive index, light absorption coefficient, and extinction technology of the device.


### 2.3.2. Detection Method for Nano flexible Photoelectric Devices Installed by Welders

The application of this method is based on the properties of photoelectric devices, so the Hall effect principle introduced is derived from the influence of magnetic field on charged particles. First, the detection of external quantum efficiency, which is one of the necessary detections of photoelectric devices, can be expressed in the following formula:(18)μ=QK/eKoPT/HV.In the above formula,Qkis the size of the photocurrent, e is the amount of the unit electron, and HV is the size of the energy of the light particle. Then, the calculation of the detection rate of photoelectric devices is expressed as follows:(19)P=B2QIc.In the above formula, B indicates the echo degree of the photodetector,Q indicates how much is charged by the electron, and Ic indicates the density of the dark current. Finally, the response line is expressed as follows:(20)I=Zaexp−mλ1+Zbexp−mλ2+I1.The above methods are the specific detection methods and algorithm introduction of nanoflexible photoelectric devices installed in welding. Relevant experiments are performed below for the above methods.


## 2.3.1. Detection Method for the Performance of Nanoflexible Photoelectric Devices

Welded tooling is a flexible mechanical fixture, which can be divided into the general type and special type, and the latter is widely used in mechanical equipment manufacturing and modular combinations. With the growing strength of China, it has more advantages than traditional cutting tooling. The preparation of nano-optoelectronic devices described above needs to be tested for their use in welder assembly. The first is the use of scanning electron microscopy, and the schematic diagram is shown in Figure7.Figure 7
Schematic diagram of the scanning electron microscope.As can be seen from Figure7, the main structure of the device enables the device to detect a variety of signals, can also receive a variety of signals, and has the ability of imaging, so that the onlookers form information about the nanophotoelectric device. In addition, the light absorption process of spot welding tooling should be detected. The light absorption process of spot welding tooling can be expressed by the following formula:(17)klky=−μl.In the above formula,μ is the proportion coefficient, and the above light absorption process is closely related to the refractive index, light absorption coefficient, and extinction technology of the device.


## 2.3.2. Detection Method for Nano flexible Photoelectric Devices Installed by Welders

The application of this method is based on the properties of photoelectric devices, so the Hall effect principle introduced is derived from the influence of magnetic field on charged particles. First, the detection of external quantum efficiency, which is one of the necessary detections of photoelectric devices, can be expressed in the following formula:(18)μ=QK/eKoPT/HV.In the above formula,Qkis the size of the photocurrent, e is the amount of the unit electron, and HV is the size of the energy of the light particle. Then, the calculation of the detection rate of photoelectric devices is expressed as follows:(19)P=B2QIc.In the above formula, B indicates the echo degree of the photodetector,Q indicates how much is charged by the electron, and Ic indicates the density of the dark current. Finally, the response line is expressed as follows:(20)I=Zaexp−mλ1+Zbexp−mλ2+I1.The above methods are the specific detection methods and algorithm introduction of nanoflexible photoelectric devices installed in welding. Relevant experiments are performed below for the above methods.


## 3. Parameters of Nanoscale Optoelectronic Devices and Related System Test Experiments

### 3.1. Equilibrium Test Experiment and Result of Nano-Optoelectronic Devices

This experiment is first carried out for testing the stability of the strength of the light of the test system, because this detection index is one of the important indicators to test the balance of the system. The operation method is as follows: first, a multichannel multiplex light source is designed to make the nanophotoelectric device emit light at a specific voltage as shown in Figure8.Figure 8
Current change diagram of the multichannel power supply.The test results in Figure8 show that the stability of the test light source is within 15%. For the experimental time, multiple repeated tests are not required, indicating that the stability of the system is reliable. The experiment targets the testing of small-sized optoelectronic devices.


### 3.2. Influence of Signal Geomagnetic Field and Result of Nanoflexible Photoelectric Devices

First, the test sample tube is designated as a specific nanophotoelectric device, and the intensity of the geomagnetic field is controlled as an experimental variable. For the test of the gain size of the nanooptical device, the collection efficiency of the device, the energy resolution of the device, and the process time dispersion parameters are calculated, and the test results are shown in Figure9.Figure 9
Testing of different parameters in different magnetic field intensities.It can be seen from Figure9 that under the same shielding effect, the gain of the nanophotoelectric device, the collection efficiency of the device, the energy resolution, and the process time of the device are all different, among which the detection efficiency is the most affected. The voltage and light intensity were always kept constant during the test. The previously designed magnetic field shielding device can achieve almost no other magnetic field interference for this experiment.


### 3.3. Performance Test Experiment and Result of Nanophotoelectric Devices

It can be known by the preparation process and parameters of nanophotoelectric devices that different concentrations of nanocomposites will have different effects on the efficiency of photoelectric devices. Therefore, the relationship between the concentration of nanomaterials and the performance of photoelectric devices is changed accordingly, as shown in Figure10.Figure 10
Efficiency of optoelectronic devices with different concentrations of nanomaterials.Figure10 shows the efficiency of nanomaterials with different concentrations in the nano-optoelectronic devices. As can be seen from the figure, when the concentration of nanomaterials reaches 8.5 ∗ 10^4 units, the efficiency of the photoelectric devices is the best among the four groups of experimental subjects. It can be seen that the photoelectric devices can at this time achieve good load capacity. In addition, in order to test the electrical performance of the device, the resistance of the photoelectric device changes with its efficiency, and the results are shown in Figure 11.Figure 11
Diagram of the efficiency test of photoelectric devices.Figure11 shows that the efficiency of the photoelectric device is positively correlated with the rate of change of its resistance. Meanwhile, the resistance changes of the device and the initial concentration of the composite nanoflexible material are also related, as shown in Figure 10.


### 3.4. Connecting Technology Experiment of Nano-Optoelectronic Devices and Mechanical Welding Tooling

The experiments in this paper are designed to enable the final application of nano-optoelectronic devices to welding tooling devices. Here, the welding tooling equipment that has been connected with nanophotoelectric devices is taken as the experimental object to test the performance of the equipment using the chopper. The following is the comparison of the characteristics of the devices at different voltages when the frequency of the chopper is specific, as shown in Figure12.Figure 12
Comparison diagram of the device performance at different voltages.As can be seen in Figure12, the different device performance and voltage at the same frequency have little impact on the performance of devices, and the difference between them is relatively small. From the above experiments, it can be considered that the application of nano-optoelectronic devices in welder installation has good efficiency.


## 3.1. Equilibrium Test Experiment and Result of Nano-Optoelectronic Devices

This experiment is first carried out for testing the stability of the strength of the light of the test system, because this detection index is one of the important indicators to test the balance of the system. The operation method is as follows: first, a multichannel multiplex light source is designed to make the nanophotoelectric device emit light at a specific voltage as shown in Figure8.Figure 8
Current change diagram of the multichannel power supply.The test results in Figure8 show that the stability of the test light source is within 15%. For the experimental time, multiple repeated tests are not required, indicating that the stability of the system is reliable. The experiment targets the testing of small-sized optoelectronic devices.


## 3.2. Influence of Signal Geomagnetic Field and Result of Nanoflexible Photoelectric Devices

First, the test sample tube is designated as a specific nanophotoelectric device, and the intensity of the geomagnetic field is controlled as an experimental variable. For the test of the gain size of the nanooptical device, the collection efficiency of the device, the energy resolution of the device, and the process time dispersion parameters are calculated, and the test results are shown in Figure9.Figure 9
Testing of different parameters in different magnetic field intensities.It can be seen from Figure9 that under the same shielding effect, the gain of the nanophotoelectric device, the collection efficiency of the device, the energy resolution, and the process time of the device are all different, among which the detection efficiency is the most affected. The voltage and light intensity were always kept constant during the test. The previously designed magnetic field shielding device can achieve almost no other magnetic field interference for this experiment.


## 3.3. Performance Test Experiment and Result of Nanophotoelectric Devices

It can be known by the preparation process and parameters of nanophotoelectric devices that different concentrations of nanocomposites will have different effects on the efficiency of photoelectric devices. Therefore, the relationship between the concentration of nanomaterials and the performance of photoelectric devices is changed accordingly, as shown in Figure10.Figure 10
Efficiency of optoelectronic devices with different concentrations of nanomaterials.Figure10 shows the efficiency of nanomaterials with different concentrations in the nano-optoelectronic devices. As can be seen from the figure, when the concentration of nanomaterials reaches 8.5 ∗ 10^4 units, the efficiency of the photoelectric devices is the best among the four groups of experimental subjects. It can be seen that the photoelectric devices can at this time achieve good load capacity. In addition, in order to test the electrical performance of the device, the resistance of the photoelectric device changes with its efficiency, and the results are shown in Figure 11.Figure 11
Diagram of the efficiency test of photoelectric devices.Figure11 shows that the efficiency of the photoelectric device is positively correlated with the rate of change of its resistance. Meanwhile, the resistance changes of the device and the initial concentration of the composite nanoflexible material are also related, as shown in Figure 10.


## 3.4. Connecting Technology Experiment of Nano-Optoelectronic Devices and Mechanical Welding Tooling

The experiments in this paper are designed to enable the final application of nano-optoelectronic devices to welding tooling devices. Here, the welding tooling equipment that has been connected with nanophotoelectric devices is taken as the experimental object to test the performance of the equipment using the chopper. The following is the comparison of the characteristics of the devices at different voltages when the frequency of the chopper is specific, as shown in Figure12.Figure 12
Comparison diagram of the device performance at different voltages.As can be seen in Figure12, the different device performance and voltage at the same frequency have little impact on the performance of devices, and the difference between them is relatively small. From the above experiments, it can be considered that the application of nano-optoelectronic devices in welder installation has good efficiency.


## 4. Discussion

This paper aims to study the application of nanoflexible optoelectronic devices in welding tooling. This move comes with the development of the times because the equipment of welding tooling is now widely used in the industrial field, and the research in this paper can help the development of the industrial field to some extent. Due to the particularity of nanomaterials, their physical properties were studied before their preparation and related experiments [26]. Later, experiments in this paper can be based on valid data. At the same time, nano-LED is also taken as the reference object of the research, and the test of parameter data is completed in the established test system so that the research before and after the article can be verified and improved.Next, the signal problem of nano-optoelectronic devices is studied due to their special physical properties. In their practical application, they face a problem, that is, the interference of the geomagnetic field, which establishes a shielding device for simulating the change of the magnetic field, so as to simulate the signal impact of a specific magnetic field on the photoelectric device, as well as the effectiveness of the shielding device. For its stability, a model of dynamic matrix predictive control is introduced in the experiment. In this paper, the common sol-gel method is used. Because the use of this preparation method has great advantages in nanocomposites, the purity of the obtained products is relatively high. After the products are obtained, the relevant characteristics of the made products are also tested, which paves the effective connection for the following products with the tooling equipment.Since the welding machine is a mechanical fixture, there are inherent conditions for the connection, use, and welding installation of nanophotoelectric devices. However, in addition to the use of nanophotoelectric devices in welding, the most important thing is to test the performance of nanoflexible devices in welding so that the application technology can operate effectively. The special physical characteristics of nano-optoelectronic devices require the detection and adjustment of their stability so that the installation of nano-flexible optoelectronic devices can be realized in welding.


## 5. Conclusions

With the increasing maturity of nanotechnology, various fields have also ushered in earth-shaking technological innovation. For the application of nanomaterials in the industrial field, this paper not only improves the update and iteration of electric welding installation technology and equipment but also provides new ideas for the interdisciplinary application of nanotechnology. This paper focuses on the characteristic detection of nanoflexible materials to provide effective experimental data in order to achieve better practical applications. Second, the simulated geomagnetic field and the signal problems of the device make the device more efficient in practical work. The experiment in this paper can contribute to the common development of nanotechnology and industrial technology and is very promising.



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*Source: 7010891-2022-09-29.xml*