# The Silver Ion and Nanocrystalline Pattern in the Glass Substrate, the Electric Field-Induced Thermal Transfer and Ink Absorption Layer Structure and Printing Performance

Authors: Cong Dong
Journal: Advances in Materials Science and Engineering
 (2022)

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## Abstract

People’s research on nanocrystals is getting more in-depth with the development of science and technology, and the patterned arrangement of nanocrystals can greatly improve the performance of our equipment in related fields, allowing people to control the patterning of nanocrystals. Research on thermal transfer is also increasing. Glass materials doped with patterned metal nanocrystals have great application potential, and the search for a simple and efficient patterned preparation method has attracted great attention of many researchers. Using the directional induced migration effect of the high temperature and high voltage DC electric field, combined with the subsequent heat treatment process, the distribution of silver nanocrystals corresponding to the surface silver film pattern can be formed in the silicate glass substrate, to realize the electric field-induced thermal transfer of the nanocrystal pattern print. This article aims to study the patterned thermal transfer of silver ions and nanocrystals on the glass substrate by applying an electric field to induce and analyze the ink absorption layer structure and printing performance. On this basis, an electron beam-induced thermal transfer method and Maxwell’s equation are proposed to investigate and calculate the structure of the ink absorption layer. The experimental structure shows that using this method increases the success rate of the preparation of silver ions and nanocrystal patterns on the glass substrate by 30%, which improves the ink absorption layer and printing performance to different degrees.


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## Body

## 1. Introduction

In recent years, with the development of science and technology, nanocrystalline materials have better physical and chemical properties than amorphous materials due to the orderly arrangement of their molecules or atoms in space. They are used to construct high-performance foundations, an important foundation for micronano integrated devices. The various unique quantum effects possessed by nanomaterials show fascinating application prospects for the development of quantum devices with excellent performance. The design and manufacture of nanodevices have become a research hotspot in the world. Among them, silver nanocrystals, as a typical crystal material, have been studied by many scientists and found that they can be used in many high-performance optoelectronic devices and gas and biochemical sensors. At the same time, there are also reports that the single wafer-like structure formed by small organic molecules has superior electron transport capabilities compared to thin-film structures. The carrier mobility of the organic field-effect transistor made of a single crystal structure is far greater than that of the thin-film material, and its device performance has been greatly improved. In addition, due to the regularity and periodicity of the material particles in the single crystal structure, it can more truly reflect the charge transport properties of the material itself, which will help to promote and improve the corresponding theoretical research.The electric field can be applied locally by using electrodes of different shapes or etching the metal film used for diffusion on the surface of the substrate into different patterns. It is possible to control the crystallization and growth of nanocrystals in the glass in different regions and realize the nanocrystals in the glass. The local patterned distribution in the matrix provides a new process approach for nanopattern fabrication technology. Due to the long-range order of the molecular or atomic arrangement of nanocrystalline materials, the optical and electrical properties of these crystalline materials are significantly improved compared to thin-film materials. This makes crystalline materials useful in optoelectronic devices, chemical sensors, and other fields. There are great potential application prospects. In addition, the large-area ordered self-assembly or its patterned structure plays an important role in the practical application of these crystalline materials in the abovementioned devices. Therefore, the development of patterning of crystalline materials plays an important role in both the theoretical research on charge transfer and the practical application research in high-performance integrated devices.The development of related technologies has not only brought about technological progress but also the application of nanomaterials. People are also urgently seeking breakthroughs. Therefore, there is also an increasing number of studies combining nanomaterials with different technologies. Among them, Berthelsen believed that optimizing the thermal spraying process based on the temperature or the residual stress state caused by temperature requires a numerical framework to simulate. A finite element framework was proposed for this work to simulate the mass deposition caused by thermal spray coating, combined with the nonlinear heat transfer simulation of rigid thermal conductors [1]. However, the description of the simulated experimental process is still relatively lacking, and the deficiencies of the entire experiment are not particularly clear. Yusupov studied the heat and transport processes involved in the transfer of gel droplets under laser cell microprinting conditions. The hydrodynamic process of the interaction between the laser radiation and the gold coating with a hydrogel layer is considered, and the temperature in the area of the laser pulse is estimated. The results show that the explosive boiling process of water (in the gel) and gold plays an important role in the laser-induced transfer mechanism [2]. This article is relatively new to the exploration of heat conduction, and it is also possible to learn relevant experience in subsequent experiments. Wang studied the flow interaction between cavities and its effect on heat transfer. The role of openings was examined, and three strategies were considered: one opening, two single-sided openings, and two double-sided openings. A numerical study of the two-dimensional laminar natural convection heat transfer in a multilayer open cavity is carried out. The results show that for a cavity with an opening, the flow in the cavity is interconnected [3]. The exploration of induced heat transfer can help us better understand the relevant knowledge in induced heat transfer. In many recent research projects of Momeni–Nasab, it is considered a challenge to manufacture microstrip transmission lines in a one-step and direct process. In this research, water-based reactive ink and inkjet printing technology were used to print MTL on RO4003C substrate for the first time. Experimental results show that the absorption rate of MTL in the frequency range of 1–5 GHz is close to 70%, which is in good agreement with the results of software simulation [4]. By investigating the frequency to ensure the absorption rate of printing, the actual printing effect can be effectively guaranteed. Mielonen studied the effect of a thin cationic polyelectrolyte coating on the diffusion, absorption, and adhesion of ink on paper substrates. A surprising effect on the printing density of dye inks has been observed on coatings containing certain cationic polymers. The behavior of printing spots and ink bleeding indicates that the cationic charge density of the polymer alone cannot explain the fixing efficiency of the colorant. The colorant capture mechanism is a complex mechanism in which the accessibility and activation of cationic sites must also be considered. This was confirmed in the analysis of coating weight dependence [5]. The study of ink bleeding behavior can be used in the experiments described in this article, and the improvement of printing performance can be well improved. Gosselin proposed a new large-scale 3D printing process for cement materials. Structures with complex geometries can be produced without temporary support. The tangential continuity method is used for slicing to provide mechanical stability. The 3D printed concrete structures produced are some of the largest structures today, and the geometric complexity makes versatility and multiscale architecture possible [6]. The improvement of printing methods can well promote the improvement of printing performance. Kim believed that the demand for high pixel density and wearable display formats increases to achieve high-performance transistors that exceed the current level of amorphous silicon and allow low-temperature solution processability of plastic substrates [7]. The improvement of printing resolution is also one way to improve printing performance. Najafi used a simple process to prepare Cu2ZnSnS4 nanocrystalline ink. Then, a coated CZTS heterojunction solar cell with zinc oxide nanorods as a buffer layer was prepared on an indium tin oxide substrate. The X-ray diffraction and scanning electron microscopy analysis showed that the ZnO nanorods have a wurtzite hexagonal structure in the [0001] direction and a CZTS nanocrystal size of <20 nm. The advantages of this method are suitable to open circuit voltage and it has a simple construction process without the use of a vacuum, which is convenient for commercial use [8]. This preparation method has strong practicability, and the preparation method is also relatively novel. For the entire reference material, most of the experimental process and the content of the experiment have a lot to learn from, but the technology involved in some references is not particularly new or even a little behind, and we still need to improve it ourselves.The innovation of this article is to constrain the thermal transfer by applying an electric field during the patterned preparation process of silver ions and nanocrystals on the glass substrate and analyzing the constrained electric field, starting from the generation of electron beams. At the same time, the electric field is used to control the preparation of silver ions and nanocrystals in the glass substrate, so that the prepared nanocrystals can be more concentrated and distributed where we want.


## 2. The Patterned Arrangement Method of Thermal Transfer Nanocrystals Induced by an External Electric Field

### 2.1. Thermal Transfer Method

Thermal transfer technology has been used in the production of fabric thermal transfer printing for a long time. With the rapid development of high technology, thermal transfer technology has become more and more widely used. The so-called thermal transfer printing first prints graphics and text on the carrier to make the transfer material and then uses the pad paper printing rubber head, thermal transfer printer, transfer printing paper, or transfer printing film to transfer the graphics of the material, and the text is transferred to the transfer material. Before printing, the image and text are printed on the intermediate transfer carrier, and then they are transferred to the substrate by special technical means such as heating, wetting, and embossing to form a printed matter. According to the classification of transfer printing technology, it can be divided into three types: cold transfer printing, thermal transfer printing, and pressure transfer printing [9]. It is mainly used in plastic, EVA, and stainless steel, and is suitable for mass production. The main process of common thermal transfer is shown in Figure 1.Figure 1
Common thermal transfer process.Thermal transfer printing, to put it simply, is the process of transferring ink from a ribbon medium to paper or film using heat and pressure and is mainly used for label printing. When the label passes through the print head and pressure shaft of the printer, the ink is transferred to the label by heat and pressure [1]. Its working principle is shown in Figure 2.Figure 2
The working principle of thermal transfer.Thermal transfer uses the principle of thermal sublimation to transfer digital images to specially treated media. According to the dye transfer method, thermal transfer printers can be divided into melt type and sublimation type. The spray printer evenly spreads the heated and dissolved dye on one side of the negative film tape. The dye side of the formed ribbon is closely connected to the recording side of the printing medium. The print head is the dye-free side of the film tape. The printing medium is provided between the rubber roller and the print head. The length of the print head is the same as the width of the paper tape. There are 8 pure gold wires per millimeter from left to right as heating wires. The heating wires are arranged by square or rectangular heating points and are equipped with drive circuits. It is used to control the on and off of the heating point, and heat is generated when the heating point is energized [10]. The dye attached to the transfer film will automatically fall off when heated and be printed on the substrate, leaving a pattern on the printing medium. By controlling the on-off of the heating point and being equipped with a paper feeding mechanism, the required graphics can be printed.The most commonly used thermal transfer method is label printing. Due to the maturity and popularization of label printing technology, the price of thermal transfer printers and consumables has dropped significantly, and the cost of label thermal transfer printing is lower than the usual printing cost. The competitiveness of label thermal transfer is strengthened [11]. Figure 3 shows the label barcode printed by thermal transfer.Figure 3
Various labels and barcodes of thermal printing.


### 2.2. The Patterning Method of Applying an Electric Field to Induce Nanocrystals

Patterning refers to the use of some special methods or means to enable materials to selectively exist in certain specific locations on the substrate to achieve a selective distribution of materials on the substrate. By means of patterning, the area, position, geometric shape, and so on of the material or its assembled structure on the substrate can be effectively controlled, and the patterned structure of the material can be obtained [12].By applying an AC electric field between two pieces of conductive glass with photoresist patterns, the preparation of a large-area patterned structure of silicon nanowires is realized. By patterning the bottom electrode by photolithography, it is possible to obtain an array structure of various patterns, such as strips, rings, grids, and squares, with silicon nanowires as assembly units. After the photoresist on the substrate is washed away, the resulting pattern can still be fixed on the conductive glass. The schematic process diagram of the electric field-induced thermal transfer of the nanocrystalline pattern is shown in Figure4.Figure 4
Schematic process diagram of electric field-induced thermal transfer of nanocrystalline patterns.The large-area components and patterned configuration of randomly dispersed organic micronano polyhedral crystals are realized by applying alternating electric fields between two electrodes. By adjusting the shape of the photoresist on the surface of the substrate, from grid-like to various complex patterns, various shapes of micronano crystal patterns can be obtained [13]. Applying a direct current between the electrodes can effectively fix the pattern on the substrate. On this basis, these patterns can be successfully transferred to an insulating flexible substrate and used to build devices. The device has excellent stress sensing performance and has high stability and repeatability. Even after the device is bent and laid flat many times, its sensing performance is still outstanding. At the same time, this method is also suitable for the assembly of large-area ordered arrays of other organic crystals of different sizes, thereby providing new possibilities for the application of organic crystal materials in integrated electronic devices and sensors [14].


### 2.3. Calculation Method of Ink Absorption Layer Structure

The ink-absorbing layer is a special coating designed to absorb and fix ink, also known as the ink-receiving layer. The printing ink droplets contact the ink-absorbing layer, and the ink-absorbing layer absorbs the ink and fixes the dye or pigment to form an image. Before talking about the calculation method of the ink absorption layer structure, it is necessary to have a certain understanding of Maxwell’s electromagnetic field theory. This theory is to study the basic law of the propagation of a changing magnetic field in space. Some basic properties of the theory can be derived from the basic equation of the electromagnetic field. It is derived from Maxwell’s equation. The changing magnetic field can excite the vortex electric field, and the changing electric field can excite the vortex magnetic field. The electric field and the magnetic field are not isolated from each other, and they are connected and excited by each other to form a unified electromagnetic field. Therefore, Maxwell’s electromagnetic field theory connects the electrical and magnetic properties of dielectric materials [15]. The ratio of the propagation speed c of light in a vacuum to the propagation speed ν in the medium material is the refractive index n of the medium material, which can be written as shown in the following formula:(1)n=cv=ε∗⋅μ.In the formula, c and v reflect the concept of complex permittivity and the frequency of light waves in the dielectric material that is,μ≈1, so formula (1) can be changed to the following formula:(2)n=ε∗.Due to the introduction of the concept of complex permittivity, the refractive indexn in formula (2) can also be represented by a complex number N, which is the famous Maxwell relationship, as shown in the following formula:(3)N=ε∗.Through formula (4), the dielectric constant in the dielectric material and its optical constant can be connected in the complex form to calculate the optical absorption performance of the film; that is, formula (3) can be written as shown in the following formula:(4)N=n−ik.This paper directly gives the calculation formulas of optical path difference and phase thickness as shown in (5) and (6):(5)Δ=2ndcosθ=2dn2−n0sin2θ0.In the formula, Δ is the optical path difference and Δ/2 is the thickness of the single-layer film.(6)δ2=πλ⋅Δ=2πλndcosθ.In the formula,δ is the phase difference when the two waves meet. When the incident angle is less than 60 degrees, we can regard it as a normal incidence. Combining formulas (5) and (6), we can get the following formula:(7)Δ2=nd=k+14λ.Therefore, the path difference can be changed by changing the incident angle and the thickness of the absorption layer, and the ink absorption layer can be simulated and designed to obtain good selective absorption performance [16].For the convenience of description in this topic, the metal particles and dielectric materials in the metal-dielectric composite material are calledX and Y, respectively, and the dielectric constants are denoted as εY and εX; and the metal particles Y are filled into the matrix material X. The filling volume is recorded as fY, and the volume percentage of the matrix material is recorded as fX. Based on the knowledge of electrostatics, the following relational expressions can be derived:(8)ε−εhε+2εh=fXεY−εhεX+2εh+fNεX−εhεX+2εh.When the metal particles are filled in the matrix material, thenεh=εX, so formula (8) can become as follows:(9)ε−εhε+2εh=fYεY−εhεY+2εh,fYεY−εhεY+2εh+fXεX−εhεX+2εh=0.As shown in Figure5, it is assumed that the surface of the absorption layer is flat and smooth, according to Maxwell’s equation and matter equation [17]. Propagation vector K and electric vector E have an admittance formula as follows:(10)G=n0K0⟶×E⟶.Figure 5
E and H diagrams when perpendicularly incident on the ink absorption layer.The amplitude coefficientr and the amplitude coefficient t of the reflected wave formed by the electromagnetic wave at the interface of two media are as follows:(11)r=Er⟶Ei⟶,t=Et⟶Ei⟶.According to the optical admittance formula (10), there are(12)Gi⟶=n0K0⟶×Ei⟶,Gr⟶=n0−K0⟶×Er⟶,Gt⟶=n0K0⟶×Et⟶.Combining boundary conditions,(13)Hi+Hr=Ht,Ei+Er=Et,where r and t are the amplitude reflection coefficient and the amplitude transmission coefficient, respectively, N is the complex refractive index of the lower interface medium, and Y is the combined admittance of the lower interface medium [18].Then, there is the following relationship between the reflectivityR and the reflectivity r of the ink-absorbing layer:(14)R=r2.It can be derived from this that(15)r1=n0−nn0+n,r2=n−npn+np,t1=2n0n0+n,t2=2nn+np,and it is equivalent to the amplitude reflection coefficient of an interface:(16)r=r1+r2e−2qδ1+r1r2e−2qδ,which is(17)δ=2πndλ.According to the above assumptions and the calculation method of the single-layer absorbing layer, the reflection coefficient of the equivalent interface between the underlying dielectric film and the base material is R2, which can be obtained from (12):(18)R2=r2+r3e−2qδ21+r2r3e−2qδ2,δ2=2πd2n2λ.According to the recursive method, the reflection coefficient of the equivalent interface and the reflection coefficient of interface 1 are then equivalent to a new interface for calculation, and the Fresnel reflection coefficientR1 of the double absorption layer film can be obtained as follows:(19)R1r1+R2e−2qδ11+r1R2e−2qδ1,δ1=2πd1n1λ.By calculating the reflectivity of the multilayer absorbing layer structure, starting from the base material and the underlying film with a thickness ofd2, according to the calculation method of the single-layer film reflectivity, the adjacent interface is equivalent to an interface, and it is progressively recursed to the top level, the combined reflection coefficient of the entire film system is finally obtained, and then the absorption rate of the ink absorption layer structure is obtained [19].


## 2.1. Thermal Transfer Method

Thermal transfer technology has been used in the production of fabric thermal transfer printing for a long time. With the rapid development of high technology, thermal transfer technology has become more and more widely used. The so-called thermal transfer printing first prints graphics and text on the carrier to make the transfer material and then uses the pad paper printing rubber head, thermal transfer printer, transfer printing paper, or transfer printing film to transfer the graphics of the material, and the text is transferred to the transfer material. Before printing, the image and text are printed on the intermediate transfer carrier, and then they are transferred to the substrate by special technical means such as heating, wetting, and embossing to form a printed matter. According to the classification of transfer printing technology, it can be divided into three types: cold transfer printing, thermal transfer printing, and pressure transfer printing [9]. It is mainly used in plastic, EVA, and stainless steel, and is suitable for mass production. The main process of common thermal transfer is shown in Figure 1.Figure 1
Common thermal transfer process.Thermal transfer printing, to put it simply, is the process of transferring ink from a ribbon medium to paper or film using heat and pressure and is mainly used for label printing. When the label passes through the print head and pressure shaft of the printer, the ink is transferred to the label by heat and pressure [1]. Its working principle is shown in Figure 2.Figure 2
The working principle of thermal transfer.Thermal transfer uses the principle of thermal sublimation to transfer digital images to specially treated media. According to the dye transfer method, thermal transfer printers can be divided into melt type and sublimation type. The spray printer evenly spreads the heated and dissolved dye on one side of the negative film tape. The dye side of the formed ribbon is closely connected to the recording side of the printing medium. The print head is the dye-free side of the film tape. The printing medium is provided between the rubber roller and the print head. The length of the print head is the same as the width of the paper tape. There are 8 pure gold wires per millimeter from left to right as heating wires. The heating wires are arranged by square or rectangular heating points and are equipped with drive circuits. It is used to control the on and off of the heating point, and heat is generated when the heating point is energized [10]. The dye attached to the transfer film will automatically fall off when heated and be printed on the substrate, leaving a pattern on the printing medium. By controlling the on-off of the heating point and being equipped with a paper feeding mechanism, the required graphics can be printed.The most commonly used thermal transfer method is label printing. Due to the maturity and popularization of label printing technology, the price of thermal transfer printers and consumables has dropped significantly, and the cost of label thermal transfer printing is lower than the usual printing cost. The competitiveness of label thermal transfer is strengthened [11]. Figure 3 shows the label barcode printed by thermal transfer.Figure 3
Various labels and barcodes of thermal printing.


## 2.2. The Patterning Method of Applying an Electric Field to Induce Nanocrystals

Patterning refers to the use of some special methods or means to enable materials to selectively exist in certain specific locations on the substrate to achieve a selective distribution of materials on the substrate. By means of patterning, the area, position, geometric shape, and so on of the material or its assembled structure on the substrate can be effectively controlled, and the patterned structure of the material can be obtained [12].By applying an AC electric field between two pieces of conductive glass with photoresist patterns, the preparation of a large-area patterned structure of silicon nanowires is realized. By patterning the bottom electrode by photolithography, it is possible to obtain an array structure of various patterns, such as strips, rings, grids, and squares, with silicon nanowires as assembly units. After the photoresist on the substrate is washed away, the resulting pattern can still be fixed on the conductive glass. The schematic process diagram of the electric field-induced thermal transfer of the nanocrystalline pattern is shown in Figure4.Figure 4
Schematic process diagram of electric field-induced thermal transfer of nanocrystalline patterns.The large-area components and patterned configuration of randomly dispersed organic micronano polyhedral crystals are realized by applying alternating electric fields between two electrodes. By adjusting the shape of the photoresist on the surface of the substrate, from grid-like to various complex patterns, various shapes of micronano crystal patterns can be obtained [13]. Applying a direct current between the electrodes can effectively fix the pattern on the substrate. On this basis, these patterns can be successfully transferred to an insulating flexible substrate and used to build devices. The device has excellent stress sensing performance and has high stability and repeatability. Even after the device is bent and laid flat many times, its sensing performance is still outstanding. At the same time, this method is also suitable for the assembly of large-area ordered arrays of other organic crystals of different sizes, thereby providing new possibilities for the application of organic crystal materials in integrated electronic devices and sensors [14].


## 2.3. Calculation Method of Ink Absorption Layer Structure

The ink-absorbing layer is a special coating designed to absorb and fix ink, also known as the ink-receiving layer. The printing ink droplets contact the ink-absorbing layer, and the ink-absorbing layer absorbs the ink and fixes the dye or pigment to form an image. Before talking about the calculation method of the ink absorption layer structure, it is necessary to have a certain understanding of Maxwell’s electromagnetic field theory. This theory is to study the basic law of the propagation of a changing magnetic field in space. Some basic properties of the theory can be derived from the basic equation of the electromagnetic field. It is derived from Maxwell’s equation. The changing magnetic field can excite the vortex electric field, and the changing electric field can excite the vortex magnetic field. The electric field and the magnetic field are not isolated from each other, and they are connected and excited by each other to form a unified electromagnetic field. Therefore, Maxwell’s electromagnetic field theory connects the electrical and magnetic properties of dielectric materials [15]. The ratio of the propagation speed c of light in a vacuum to the propagation speed ν in the medium material is the refractive index n of the medium material, which can be written as shown in the following formula:(1)n=cv=ε∗⋅μ.In the formula, c and v reflect the concept of complex permittivity and the frequency of light waves in the dielectric material that is,μ≈1, so formula (1) can be changed to the following formula:(2)n=ε∗.Due to the introduction of the concept of complex permittivity, the refractive indexn in formula (2) can also be represented by a complex number N, which is the famous Maxwell relationship, as shown in the following formula:(3)N=ε∗.Through formula (4), the dielectric constant in the dielectric material and its optical constant can be connected in the complex form to calculate the optical absorption performance of the film; that is, formula (3) can be written as shown in the following formula:(4)N=n−ik.This paper directly gives the calculation formulas of optical path difference and phase thickness as shown in (5) and (6):(5)Δ=2ndcosθ=2dn2−n0sin2θ0.In the formula, Δ is the optical path difference and Δ/2 is the thickness of the single-layer film.(6)δ2=πλ⋅Δ=2πλndcosθ.In the formula,δ is the phase difference when the two waves meet. When the incident angle is less than 60 degrees, we can regard it as a normal incidence. Combining formulas (5) and (6), we can get the following formula:(7)Δ2=nd=k+14λ.Therefore, the path difference can be changed by changing the incident angle and the thickness of the absorption layer, and the ink absorption layer can be simulated and designed to obtain good selective absorption performance [16].For the convenience of description in this topic, the metal particles and dielectric materials in the metal-dielectric composite material are calledX and Y, respectively, and the dielectric constants are denoted as εY and εX; and the metal particles Y are filled into the matrix material X. The filling volume is recorded as fY, and the volume percentage of the matrix material is recorded as fX. Based on the knowledge of electrostatics, the following relational expressions can be derived:(8)ε−εhε+2εh=fXεY−εhεX+2εh+fNεX−εhεX+2εh.When the metal particles are filled in the matrix material, thenεh=εX, so formula (8) can become as follows:(9)ε−εhε+2εh=fYεY−εhεY+2εh,fYεY−εhεY+2εh+fXεX−εhεX+2εh=0.As shown in Figure5, it is assumed that the surface of the absorption layer is flat and smooth, according to Maxwell’s equation and matter equation [17]. Propagation vector K and electric vector E have an admittance formula as follows:(10)G=n0K0⟶×E⟶.Figure 5
E and H diagrams when perpendicularly incident on the ink absorption layer.The amplitude coefficientr and the amplitude coefficient t of the reflected wave formed by the electromagnetic wave at the interface of two media are as follows:(11)r=Er⟶Ei⟶,t=Et⟶Ei⟶.According to the optical admittance formula (10), there are(12)Gi⟶=n0K0⟶×Ei⟶,Gr⟶=n0−K0⟶×Er⟶,Gt⟶=n0K0⟶×Et⟶.Combining boundary conditions,(13)Hi+Hr=Ht,Ei+Er=Et,where r and t are the amplitude reflection coefficient and the amplitude transmission coefficient, respectively, N is the complex refractive index of the lower interface medium, and Y is the combined admittance of the lower interface medium [18].Then, there is the following relationship between the reflectivityR and the reflectivity r of the ink-absorbing layer:(14)R=r2.It can be derived from this that(15)r1=n0−nn0+n,r2=n−npn+np,t1=2n0n0+n,t2=2nn+np,and it is equivalent to the amplitude reflection coefficient of an interface:(16)r=r1+r2e−2qδ1+r1r2e−2qδ,which is(17)δ=2πndλ.According to the above assumptions and the calculation method of the single-layer absorbing layer, the reflection coefficient of the equivalent interface between the underlying dielectric film and the base material is R2, which can be obtained from (12):(18)R2=r2+r3e−2qδ21+r2r3e−2qδ2,δ2=2πd2n2λ.According to the recursive method, the reflection coefficient of the equivalent interface and the reflection coefficient of interface 1 are then equivalent to a new interface for calculation, and the Fresnel reflection coefficientR1 of the double absorption layer film can be obtained as follows:(19)R1r1+R2e−2qδ11+r1R2e−2qδ1,δ1=2πd1n1λ.By calculating the reflectivity of the multilayer absorbing layer structure, starting from the base material and the underlying film with a thickness ofd2, according to the calculation method of the single-layer film reflectivity, the adjacent interface is equivalent to an interface, and it is progressively recursed to the top level, the combined reflection coefficient of the entire film system is finally obtained, and then the absorption rate of the ink absorption layer structure is obtained [19].


## 3. Nanocrystal Patterning Experiment

### 3.1. Preparation Experiment of Nanocrystal Pattern Control

This experiment mainly explores the patterned preparation of nanocrystal masks. At present, there are many preparation methods for nanoparticles. According to different classification standards, there can be a variety of classification methods. According to the reaction environment, it can be divided into liquid phase methods, gas phase methods, and solid phase methods; according to the nature of the reaction, it can be divided into chemical preparation methods, chemical-physical preparation methods, and physical preparation methods. Different preparation methods can result in different nanoparticle properties and particle sizes. At present, the most common patterned preparation methods of concentrated nanocrystals are as follows:Direct writing: direct writing pattern preparation methods include ion implantation, femtosecond laser method, and so onCopy type: Copy type graphics preparation methods mainly include mask ion exchange method, surface noncontact printing method, and so onThis article explores the patterned experimental preparation of nanocrystals and silver ions in glass substrates induced by electric field electron beams in an electric field. The main equipment used in the electron beam induction experimental platform for nanocrystals and silver ions in glass substrates are scanning surface electron microscopes and atomic force microscopes [20]. The scanning electron microscope is mainly used for real-time observation and direct writing of silver ions in nanocrystals and glass substrates; the experimental equipment for dispersing nanocrystals and silver ions in glass substrates is mainly to disperse nanocrystals and silver ions on the substrate. Raw materials are provided for direct writing experiments. The process of inducing nanocrystals through electron beams is shown in Figure 6.Figure 6
The process of electron beam induction of nanocrystals.


#### 3.1.1. Scanning Electron Microscope

The scanning electron microscope is one of the most commonly used tools for microstructure morphology detection and chemical composition characterization analysis. Because it has the advantages of real-time observation, high cleanliness, and high vacuum in the nano-scale and can provide sufficient vacuum chamber space, it can integrate a variety of detection devices and positioning devices, so the nanodirect writing technology based on SEM is the field of nanotechnology’s ideal development direction in the future [21]. The selection of electronic scanning mirrors is screened according to their related parameters. The related parameters of electronic scanning mirrors of different brands are shown in Table 1.Table 1
Related parameters of different brands of microelectronic scanning mirrors.
ModelMinimum resolution (nm)Accelerating voltageProbe currentStorage resolutionGainMERLIN compact1.50.02–30 KV3 pA–40 nA32 K∗24 K12–20000001000/110 type830–62 KV0.8 pA–32 pA60 K∗54 K50–4000000CUBE-II type0.01812–50 KV21 pA–68 pA14 K∗48 K32–3200000Taking into account the actual use of the experimental process, in this experiment, we choose the MERLIN Compact field emission scanning electron microscope for real-time observation. The working principle is that electrons are emitted from the cathode of the electron gun, and after passing through the accelerating voltage, they are focused to make it an incident electron beam. The schematic diagram of the incident electron beam bombarding the sample is shown in Figure7.Figure 7
Schematic diagram of incident electron beam bombarding the sample.The incident electron beam scans the surface of the sample to be tested under the action of the magnetic field of the scanning coil, and the secondary electrons are excited from the sample to be tested, and the amount of secondary electron emission changes with the surface topography of the sample to be tested. The collector collects the secondary electrons emitted in all directions.


#### 3.1.2. Experimental Equipment for Dispersing Nanocrystals

In the experiment, we used an ultrasonic cleaner to disperse the nanocrystals. Through the high-frequency oscillation signal from the ultrasonic generator, the transducer converts the high-frequency oscillation signal into a high-frequency mechanical oscillation and propagates it into the solution, making the solution dense. The alternate ultrasonic waves radiate forward [22]. The main parameters of the related ultrasonic cleaner are shown in Table 2.Table 2
The main parameters of ultrasonic cleaning machine.
ModelCapacity (L)Ultrasonic power (W)FrequencyPower regulationJTA-100030150028/40 KHz35% ∼ 100%JTA-10362560028/40 KHz20% ∼ 100%XC-300C1540040 KHz40% ∼ 100%Through the analysis and comparison of the relevant parameters of the various ultrasonic cleaning machines in Table2, and combining the requirements of the experiment, the XC-300C was finally selected as the ultrasonic cleaning machine used in our experiment.


#### 3.1.3. Experimental Materials

The focus of this paper is to use electron beams to induce nanocrystals, and then through the interaction between the electron beams and the microscopic forces of the nanocrystals, the direct writing of nanocrystals can be realized. So, nanomaterials are used as raw materials for the direct writing of nanocrystals. The main parameters of the nanoparticles used in this article are shown in Table3.Table 3
The main parameters of nanomaterials.
TypeParticle sizePuritySurface areaBulk densityAg21>99.8941.20.51Cu1899.9718.60.37Au14>99.9419.170.43Al5299.9621.20.22Pt11>99.9845.20.24Pd13>99.99512.31For the selection of the base material, the main consideration is the thermal conductivity and electrical conductivity of the base material. In the process of direct writing of the metal nanowires induced by the electron beam, the heat of the electron beam is mainly dissipated through the substrate. Therefore, in order to reduce the heat dissipation of the electron beam, materials with low thermal conductivity should be selected. Because of the charging effect during the imaging process of the scanning electron beam microscope, the base material must also have a certain electrical conductivity. Based on the above two points, the substrate material used in this article is ITO conductive glass. ITO conductive glass is based on soda-lime-based or silicon-boron-based substrate glass, which is processed into a layer of ITO film by sputtering, evaporation, and other methods [23].


## 3.1. Preparation Experiment of Nanocrystal Pattern Control

This experiment mainly explores the patterned preparation of nanocrystal masks. At present, there are many preparation methods for nanoparticles. According to different classification standards, there can be a variety of classification methods. According to the reaction environment, it can be divided into liquid phase methods, gas phase methods, and solid phase methods; according to the nature of the reaction, it can be divided into chemical preparation methods, chemical-physical preparation methods, and physical preparation methods. Different preparation methods can result in different nanoparticle properties and particle sizes. At present, the most common patterned preparation methods of concentrated nanocrystals are as follows:Direct writing: direct writing pattern preparation methods include ion implantation, femtosecond laser method, and so onCopy type: Copy type graphics preparation methods mainly include mask ion exchange method, surface noncontact printing method, and so onThis article explores the patterned experimental preparation of nanocrystals and silver ions in glass substrates induced by electric field electron beams in an electric field. The main equipment used in the electron beam induction experimental platform for nanocrystals and silver ions in glass substrates are scanning surface electron microscopes and atomic force microscopes [20]. The scanning electron microscope is mainly used for real-time observation and direct writing of silver ions in nanocrystals and glass substrates; the experimental equipment for dispersing nanocrystals and silver ions in glass substrates is mainly to disperse nanocrystals and silver ions on the substrate. Raw materials are provided for direct writing experiments. The process of inducing nanocrystals through electron beams is shown in Figure 6.Figure 6
The process of electron beam induction of nanocrystals.


### 3.1.1. Scanning Electron Microscope

The scanning electron microscope is one of the most commonly used tools for microstructure morphology detection and chemical composition characterization analysis. Because it has the advantages of real-time observation, high cleanliness, and high vacuum in the nano-scale and can provide sufficient vacuum chamber space, it can integrate a variety of detection devices and positioning devices, so the nanodirect writing technology based on SEM is the field of nanotechnology’s ideal development direction in the future [21]. The selection of electronic scanning mirrors is screened according to their related parameters. The related parameters of electronic scanning mirrors of different brands are shown in Table 1.Table 1
Related parameters of different brands of microelectronic scanning mirrors.
ModelMinimum resolution (nm)Accelerating voltageProbe currentStorage resolutionGainMERLIN compact1.50.02–30 KV3 pA–40 nA32 K∗24 K12–20000001000/110 type830–62 KV0.8 pA–32 pA60 K∗54 K50–4000000CUBE-II type0.01812–50 KV21 pA–68 pA14 K∗48 K32–3200000Taking into account the actual use of the experimental process, in this experiment, we choose the MERLIN Compact field emission scanning electron microscope for real-time observation. The working principle is that electrons are emitted from the cathode of the electron gun, and after passing through the accelerating voltage, they are focused to make it an incident electron beam. The schematic diagram of the incident electron beam bombarding the sample is shown in Figure7.Figure 7
Schematic diagram of incident electron beam bombarding the sample.The incident electron beam scans the surface of the sample to be tested under the action of the magnetic field of the scanning coil, and the secondary electrons are excited from the sample to be tested, and the amount of secondary electron emission changes with the surface topography of the sample to be tested. The collector collects the secondary electrons emitted in all directions.


### 3.1.2. Experimental Equipment for Dispersing Nanocrystals

In the experiment, we used an ultrasonic cleaner to disperse the nanocrystals. Through the high-frequency oscillation signal from the ultrasonic generator, the transducer converts the high-frequency oscillation signal into a high-frequency mechanical oscillation and propagates it into the solution, making the solution dense. The alternate ultrasonic waves radiate forward [22]. The main parameters of the related ultrasonic cleaner are shown in Table 2.Table 2
The main parameters of ultrasonic cleaning machine.
ModelCapacity (L)Ultrasonic power (W)FrequencyPower regulationJTA-100030150028/40 KHz35% ∼ 100%JTA-10362560028/40 KHz20% ∼ 100%XC-300C1540040 KHz40% ∼ 100%Through the analysis and comparison of the relevant parameters of the various ultrasonic cleaning machines in Table2, and combining the requirements of the experiment, the XC-300C was finally selected as the ultrasonic cleaning machine used in our experiment.


### 3.1.3. Experimental Materials

The focus of this paper is to use electron beams to induce nanocrystals, and then through the interaction between the electron beams and the microscopic forces of the nanocrystals, the direct writing of nanocrystals can be realized. So, nanomaterials are used as raw materials for the direct writing of nanocrystals. The main parameters of the nanoparticles used in this article are shown in Table3.Table 3
The main parameters of nanomaterials.
TypeParticle sizePuritySurface areaBulk densityAg21>99.8941.20.51Cu1899.9718.60.37Au14>99.9419.170.43Al5299.9621.20.22Pt11>99.9845.20.24Pd13>99.99512.31For the selection of the base material, the main consideration is the thermal conductivity and electrical conductivity of the base material. In the process of direct writing of the metal nanowires induced by the electron beam, the heat of the electron beam is mainly dissipated through the substrate. Therefore, in order to reduce the heat dissipation of the electron beam, materials with low thermal conductivity should be selected. Because of the charging effect during the imaging process of the scanning electron beam microscope, the base material must also have a certain electrical conductivity. Based on the above two points, the substrate material used in this article is ITO conductive glass. ITO conductive glass is based on soda-lime-based or silicon-boron-based substrate glass, which is processed into a layer of ITO film by sputtering, evaporation, and other methods [23].


## 3.1.1. Scanning Electron Microscope

The scanning electron microscope is one of the most commonly used tools for microstructure morphology detection and chemical composition characterization analysis. Because it has the advantages of real-time observation, high cleanliness, and high vacuum in the nano-scale and can provide sufficient vacuum chamber space, it can integrate a variety of detection devices and positioning devices, so the nanodirect writing technology based on SEM is the field of nanotechnology’s ideal development direction in the future [21]. The selection of electronic scanning mirrors is screened according to their related parameters. The related parameters of electronic scanning mirrors of different brands are shown in Table 1.Table 1
Related parameters of different brands of microelectronic scanning mirrors.
ModelMinimum resolution (nm)Accelerating voltageProbe currentStorage resolutionGainMERLIN compact1.50.02–30 KV3 pA–40 nA32 K∗24 K12–20000001000/110 type830–62 KV0.8 pA–32 pA60 K∗54 K50–4000000CUBE-II type0.01812–50 KV21 pA–68 pA14 K∗48 K32–3200000Taking into account the actual use of the experimental process, in this experiment, we choose the MERLIN Compact field emission scanning electron microscope for real-time observation. The working principle is that electrons are emitted from the cathode of the electron gun, and after passing through the accelerating voltage, they are focused to make it an incident electron beam. The schematic diagram of the incident electron beam bombarding the sample is shown in Figure7.Figure 7
Schematic diagram of incident electron beam bombarding the sample.The incident electron beam scans the surface of the sample to be tested under the action of the magnetic field of the scanning coil, and the secondary electrons are excited from the sample to be tested, and the amount of secondary electron emission changes with the surface topography of the sample to be tested. The collector collects the secondary electrons emitted in all directions.


## 3.1.2. Experimental Equipment for Dispersing Nanocrystals

In the experiment, we used an ultrasonic cleaner to disperse the nanocrystals. Through the high-frequency oscillation signal from the ultrasonic generator, the transducer converts the high-frequency oscillation signal into a high-frequency mechanical oscillation and propagates it into the solution, making the solution dense. The alternate ultrasonic waves radiate forward [22]. The main parameters of the related ultrasonic cleaner are shown in Table 2.Table 2
The main parameters of ultrasonic cleaning machine.
ModelCapacity (L)Ultrasonic power (W)FrequencyPower regulationJTA-100030150028/40 KHz35% ∼ 100%JTA-10362560028/40 KHz20% ∼ 100%XC-300C1540040 KHz40% ∼ 100%Through the analysis and comparison of the relevant parameters of the various ultrasonic cleaning machines in Table2, and combining the requirements of the experiment, the XC-300C was finally selected as the ultrasonic cleaning machine used in our experiment.


## 3.1.3. Experimental Materials

The focus of this paper is to use electron beams to induce nanocrystals, and then through the interaction between the electron beams and the microscopic forces of the nanocrystals, the direct writing of nanocrystals can be realized. So, nanomaterials are used as raw materials for the direct writing of nanocrystals. The main parameters of the nanoparticles used in this article are shown in Table3.Table 3
The main parameters of nanomaterials.
TypeParticle sizePuritySurface areaBulk densityAg21>99.8941.20.51Cu1899.9718.60.37Au14>99.9419.170.43Al5299.9621.20.22Pt11>99.9845.20.24Pd13>99.99512.31For the selection of the base material, the main consideration is the thermal conductivity and electrical conductivity of the base material. In the process of direct writing of the metal nanowires induced by the electron beam, the heat of the electron beam is mainly dissipated through the substrate. Therefore, in order to reduce the heat dissipation of the electron beam, materials with low thermal conductivity should be selected. Because of the charging effect during the imaging process of the scanning electron beam microscope, the base material must also have a certain electrical conductivity. Based on the above two points, the substrate material used in this article is ITO conductive glass. ITO conductive glass is based on soda-lime-based or silicon-boron-based substrate glass, which is processed into a layer of ITO film by sputtering, evaporation, and other methods [23].


## 4. Mechanism and Performance Analysis of Nanocrystals

### 4.1. Nanocrystal Analysis

The vertically oriented nanocrystal array has excellent light trapping ability and other special properties, so it has great application potential in the field of electronic devices [24]. The nanowire array has a light absorption capacity of more than 90% in the range of visible light. This high light absorption capacity is not only due to the higher specific surface area of the nanocrystal itself but also the microstructure of the nanocrystal through the transmission electron microscopes. According to the analysis, this is also largely due to the rough surface of a single SiNW obtained by wet etching [25]. Through the analysis of the microstructure of the nanocrystal array and the characterization of its performance, this chapter further explores the more microscopic factors that affect its performance, which is of great significance for the research of micro-nanofunctional electronic devices [26].


#### 4.1.1. Fluorescence Spectrum Analysis

We used a fluorescence spectrometer to perform a fluorescence (PL) test on the prepared silver nanocrystals and the original polished silicon wafers. Fluorescence spectroscopy refers to the study of the conformational changes of protein molecules or the study of tryptophan and tyrosine residues by measuring the self-fluorescence of protein molecules or introducing fluorescent probes into specific parts of protein molecules and then measuring their fluorescence. The test results are shown in Figure8.Figure 8
PL characteristics and energy spectra of nanocrystalline and polished silicon wafers.The silver nanocrystal arrays obtained by using the PS microsphere masking method and wet etching have a wide ultraviolet light emission band in the range of 40–120 nm wavelength, and the peak value is at 50 nm wavelength. At the same time, a wider weak red light emission band with a wavelength range of 120–200 nm was observed, with a peak at 170 nm. The nanocrystal is etched on the polished silicon wafer. The diameter of the nanocrystal is between 0 and 40 nm. As shown in the figure, these two peaks are added based on the original polishing, which causes this phenomenon. The reason is largely related to oxygen defects in nanocrystals [27]. Through analysis, the ultraviolet light emission band is due to oxygen-related defects in the amorphous oxide of the nanocrystalline shell layer, such as oxygen vacancy defects [28]. On the other hand, the weak red light emission zone is caused by defects in the vicinity of the interface between the core of the nanocrystal and the amorphous oxide shell, such as a double bond state. All in all, the radiative recombination of electrons and holes between the luminescence center of these oxygen vacancy defects or double bond states and the valence band eventually leads to the photoluminescence (PL) of the nanocrystals [29, 30].After the above comparison, we can see that the patterning of silver ions and nanocrystals on the glass substrate induced by electric field-induced thermal transfer has a good effect. Compared to the previous common methods, the success rate of patterning has increased by 30%, and the concentration and automation of the entire graph have been improved to varying degrees [31]. At the same time, through the investigation of the structure of the ink absorption layer in this article, it can be known that it has a better promotion effect on the improvement of the overall printing performance [32].


## 4.1. Nanocrystal Analysis

The vertically oriented nanocrystal array has excellent light trapping ability and other special properties, so it has great application potential in the field of electronic devices [24]. The nanowire array has a light absorption capacity of more than 90% in the range of visible light. This high light absorption capacity is not only due to the higher specific surface area of the nanocrystal itself but also the microstructure of the nanocrystal through the transmission electron microscopes. According to the analysis, this is also largely due to the rough surface of a single SiNW obtained by wet etching [25]. Through the analysis of the microstructure of the nanocrystal array and the characterization of its performance, this chapter further explores the more microscopic factors that affect its performance, which is of great significance for the research of micro-nanofunctional electronic devices [26].


### 4.1.1. Fluorescence Spectrum Analysis

We used a fluorescence spectrometer to perform a fluorescence (PL) test on the prepared silver nanocrystals and the original polished silicon wafers. Fluorescence spectroscopy refers to the study of the conformational changes of protein molecules or the study of tryptophan and tyrosine residues by measuring the self-fluorescence of protein molecules or introducing fluorescent probes into specific parts of protein molecules and then measuring their fluorescence. The test results are shown in Figure8.Figure 8
PL characteristics and energy spectra of nanocrystalline and polished silicon wafers.The silver nanocrystal arrays obtained by using the PS microsphere masking method and wet etching have a wide ultraviolet light emission band in the range of 40–120 nm wavelength, and the peak value is at 50 nm wavelength. At the same time, a wider weak red light emission band with a wavelength range of 120–200 nm was observed, with a peak at 170 nm. The nanocrystal is etched on the polished silicon wafer. The diameter of the nanocrystal is between 0 and 40 nm. As shown in the figure, these two peaks are added based on the original polishing, which causes this phenomenon. The reason is largely related to oxygen defects in nanocrystals [27]. Through analysis, the ultraviolet light emission band is due to oxygen-related defects in the amorphous oxide of the nanocrystalline shell layer, such as oxygen vacancy defects [28]. On the other hand, the weak red light emission zone is caused by defects in the vicinity of the interface between the core of the nanocrystal and the amorphous oxide shell, such as a double bond state. All in all, the radiative recombination of electrons and holes between the luminescence center of these oxygen vacancy defects or double bond states and the valence band eventually leads to the photoluminescence (PL) of the nanocrystals [29, 30].After the above comparison, we can see that the patterning of silver ions and nanocrystals on the glass substrate induced by electric field-induced thermal transfer has a good effect. Compared to the previous common methods, the success rate of patterning has increased by 30%, and the concentration and automation of the entire graph have been improved to varying degrees [31]. At the same time, through the investigation of the structure of the ink absorption layer in this article, it can be known that it has a better promotion effect on the improvement of the overall printing performance [32].


## 4.1.1. Fluorescence Spectrum Analysis

We used a fluorescence spectrometer to perform a fluorescence (PL) test on the prepared silver nanocrystals and the original polished silicon wafers. Fluorescence spectroscopy refers to the study of the conformational changes of protein molecules or the study of tryptophan and tyrosine residues by measuring the self-fluorescence of protein molecules or introducing fluorescent probes into specific parts of protein molecules and then measuring their fluorescence. The test results are shown in Figure8.Figure 8
PL characteristics and energy spectra of nanocrystalline and polished silicon wafers.The silver nanocrystal arrays obtained by using the PS microsphere masking method and wet etching have a wide ultraviolet light emission band in the range of 40–120 nm wavelength, and the peak value is at 50 nm wavelength. At the same time, a wider weak red light emission band with a wavelength range of 120–200 nm was observed, with a peak at 170 nm. The nanocrystal is etched on the polished silicon wafer. The diameter of the nanocrystal is between 0 and 40 nm. As shown in the figure, these two peaks are added based on the original polishing, which causes this phenomenon. The reason is largely related to oxygen defects in nanocrystals [27]. Through analysis, the ultraviolet light emission band is due to oxygen-related defects in the amorphous oxide of the nanocrystalline shell layer, such as oxygen vacancy defects [28]. On the other hand, the weak red light emission zone is caused by defects in the vicinity of the interface between the core of the nanocrystal and the amorphous oxide shell, such as a double bond state. All in all, the radiative recombination of electrons and holes between the luminescence center of these oxygen vacancy defects or double bond states and the valence band eventually leads to the photoluminescence (PL) of the nanocrystals [29, 30].After the above comparison, we can see that the patterning of silver ions and nanocrystals on the glass substrate induced by electric field-induced thermal transfer has a good effect. Compared to the previous common methods, the success rate of patterning has increased by 30%, and the concentration and automation of the entire graph have been improved to varying degrees [31]. At the same time, through the investigation of the structure of the ink absorption layer in this article, it can be known that it has a better promotion effect on the improvement of the overall printing performance [32].


## 5. Conclusions

An electric field-induced thermal transfer technology is a new method for preparing silver nanocrystal patterns in glass substrates. This article mainly explores the patterning of silver ions and nanocrystals on the glass substrate. For the improvement of the ink absorption layer and printing performance, the electric field is used to constrain the silver ions and nanocrystals on the glass substrate by applying an electric field. The ions are arranged in the desired way to obtain the desired pattern. Due to the effect of high temperature, a certain degree of concentration gradient diffusion of silver will occur during the electric field-induced thermal transfer to form a transition area between the silver-covered area and the silver-free area. During the subsequent heat treatment, due to the concentration gradient diffusion again and the Ag aggregation effect when the nanocrystals grow, the silver content of the matrix in the transition area is sharply reduced, which makes the boundary blurry, and finally affects the dimensional accuracy of the transfer pattern.



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*Source: 4272294-2022-08-11.xml*