# Topological Attributes of Silicon CarbideSiC4-IIi,j Based on Ve-Degree and Ev-Degree

Authors: Abid Mahboob; Dalal Alrowaili; Sajid Mahboob Alam; Rifaqat Ali; Muhammad Waheed Rasheed; Imran Siddique
Journal: Journal of Chemistry
 (2022)

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## Abstract

The study of graphs containing edges and nodes is of great importance in science and in real life. Topological indicesTIs are numerical parameters linked to chemical graphs used to estimate the biological, toxicological, and physical properties of chemical compounds. Recently, two terms, ev-degree- and ve-degree-based TIs, have been defined in chemical graph theory. In this paper, we have estimated degree-based TIs, namely, ev-degree Zagreb M type index, ev-degree Randic R index, ve-degree atom-bond connectivity ABC index, ve-degree geometric arithmetic index GA, ve-degree harmonic H index, and ve-degree sum-connectivity index for SiC4-IIi,j.


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## Body

## 1. Introduction

A graph is the combination of lines and points in a specific way. Vertices and edges refer to points and lines, respectively. The term “graph” was invented by the Swiss mathematician Euler in the 18th century when he solved the famous Konigsberg Bridge problem [1]. It was a great revolution for chemistry. The most important topic in chemistry is isomerism, in which chemical compounds have similar descriptions of molecular formulae but different structural formulae. The different isomers of a chemical compound have different biological and chemical properties. Graph theory has numerous applications in science as well as in real life (see [2–7] for a more detailed explanation). The chemical graph theory is extensively used for the development of chemistry, medicines, and drugs [8–10].The term “topological index” is derived from graph theory. Topological indices are mathematical cords of molecular structure. The topological index is a function between molecular structure and mathematical real numbers. The first molecular descriptor was introduced by Weiner in 1947 when he was estimating the boiling point of alkenes [11]. Randic, Zagreb, and Weiner are famous topological indices. Zhong introduced the harmonic index used to find the lower and upper bounds of chemical structures [12–15].Milan Randic introduced the concept of Randic index in 1975, used in chemoinformation for the investigation of organic compounds [16–18]. The concept of Zagreb indices is useful for biological activity and chemicals like drugs and toxicants [19–22]. This work has been done with a classical degree-based concept. There are four main types of topological indices: vertex degree based, edge degree based, distance based, eccentricity based, and metric based. Based on the results, topological indices under study are strongly correlated with the physicochemical characteristics of potential antiviral drugs. These indices have a correlation with many physical as well as chemical characteristics of organic and nonorganic compounds. Different indices are used to get better correlation coefficients, and specific indices are related to particular properties, such as the Randic index for pi-electron energy for branching networks and the wiener index for boiling points of alkanes. The indices can also be used to search deep inside any structural graph without wasting money or performing difficult experiments.The purpose of this paper is to discuss the ve-degree- and ev-degree-dependent TIs. The concept of ev-degree- and ev-degree-dependent TIs in graph theory was suggested by Horoldagva et al. [23]. After some time, Sahin and Ediz [24] proposed these degree-dependent indices in mathematics. The Zagreb (M) and Randic (R) indices based on ve-degree and ev-degree are more powerful than traditional vertex type indices.We discuss the ev-degree- and ve-degree-related T-indices for silicon carbideSiC4-II[i, j]. Silicon carbide is a promising candidate for industrial products. Due to its unique properties, it has lots of applications in mechanical seals, pump components, gas turbines, heat exchangers, ceramic fans, cutting tools, automobile parts, foundry crucibles, nuclear fuel particles, etc.In 2018, Ediz studied the properties of oxygen and silicate networks with the help of these advanced indices [25]. These indices are not only used in chemistry but also in computer sciences and for the network of security. To understand the structure of the Tickysim spiking neural network, see an article by Cancan [26]. Due to the need and importance of silicon, Kang et al. explored an isomer of silicon carbide by ev-degree and ve-degree [27]. Nanotube structures have become a very interesting topic for the production of drugs. In 2021, a paper was published on the ev-degree and ve-degree of single-walled titanium dioxide nanotube that gives very good correlation coefficients [28]. These new indices are also useful for a series of benzenoid graphs [29], hyaluronic acid-anticancer drugs [30], and hex-derived networks [31]. In 2021, Kirmani et al. proposed an article on an important isomer of silicon carbide based on ev-degree and ve-degree [32] (for more advanced information about graphs, silicon carbide, and topological indices, see [31, 33–40]).This manuscript contains some particular sections. First, we will propose some basic definitions from the literature. Then, we will deeply discuss the 2D structures of silicon carbide and get results. We will then graphically represent these indices.


## 2. Preliminaries

ConsiderG be the graph with VG as collection of nodes and EG as kit of edges. Let è be an edge connecting the vertices c and d; then, it can be written as è=cd. In mathematics, a vertex’s degree degc is the number of adjacent vertices it shares.The ev-degree of an edgecd=è is denoted by degevè and defined as follows:“The total quantity of the vertices set of the union of the verticesc and d in closed neighborhoods.”The ve-degree of any vertexcεVG is denoted by degve(c) and defined as follows:“The total quantity of those edges that is incident to any vertex from the closed neighborhood ofc, i.e., the sum of all closed neighborhood vertex by degrees of c.”Some basic definitions related to the ev-degree- and ve-degree-dependent T-indices are given below:The ev-degree-dependent M-index is mathematically described as(1)MevG=∑èεEdegevè2.The first ve-degree Zagreb alpha index is defined as(2)M1αveG=∑cεVdegevc2.The first ve-degree Zagreb beta index is calculated as(3)M1βveG=∑cdεEdegvec+degved.The second ve-degree Zagreb index is determined as(4)M2veG=∑cdεEdegvec×degved.The ve-degree Randic index is computed as(5)RveG=∑cdεEdegvec×degved−1/2.The ev-degree Randic index computed as(6)RevG=∑èεEdegveè−1/2.The ve-degree atom-bond connectivity index is suggested as(7)ABCveG=∑cdεEdegvec+degved−2degvec×degved.The ve-degree geometric arithmetic index is mathematically explained as(8)GAveG=∑uvεE2degvec×degveddegvec+degved.The ve-degree harmonic index is determined as(9)HveG=∑cdεEG2degvec+degved.The ve-degree sum-connectivity index is described as(10)XveG=∑cdεEGdegvec+degved−1/2.


## 3. Methods

We employ many techniques like vertex segment strategy, edge separation technique, graph analytical device, degree checking technique, and combinatorial techniques to obtain our results. We use different softwares for this paper: MATLAB is used for the calculations and verification, MAPLE is used for the 2D and 3D graphs, and chemsketch is used for the structural graphs ofSiC4-II[i, j].


## 4. Description of Two Dimensional Silicon CarbideSiC4−IIi,j

The 2D molecular structure ofSiC4−IIi,j is explained in Figures 1 and 2, respectively. Any chemical structure starts with the unit cell, a building block that serves as the basis for the formation of other chemical compounds. The length of the row will be increased if we attach the basic cells in the i direction, while if we increase basic cell in j style, then it enhances number of row.Figure 1
(a) Unit cell ofSiC4–II[i, j] and (b) SiC4–II [3] where i=j=3.
(a)(b)Figure 2
(a) SiC4–II [1, 4] where i=4 and j=1 and (b) SiC4–II [2, 4] where i=4 and j=2.
(a)(b)The quantity of nodes and edges inSiC4−IIi,j is represented as
(11)VSiC4−IIi,j=10ij,ESiC4−IIi,j=15ij−4i−2j.


## 5. Techniques for Silicon CarbideSiC4-IIi,j Formulae

For the determination of formulae for silicon carbideSiC3-IIi,j we utilize the basic cell. Join these basic cells in horizontal way to increase i and connect vertically to rows as j increases.


### 5.1. Vertex Partition

According to the degree of vertices, there are three types of vertices. The vertices of one, two, and three degrees are represented asV1, V2 and V3, respectively. By utilizing Table 1 and MATLAB, we will calculate the generalization of the formulas of nodes in Table 2. The total vertices and total edges explained in Table 3.Table 1
Vertex partition ofSiC4-IIi,j.
[i,j][1][1, 2][1, 3][1, 2][2][2, 3][1, 3][2, 3][3]V1222222222V281624122028162432V302461830123456Table 2
Vertex degree with corresponding cardinality.
degcTotal vertexV12V28i+4j−4V310ij−8i−4j+2Table 3
Cardinality of nodes and edges forSiC4-IIi,j.
Total verticesTotal edges10ij15ij−4i−2j


### 5.2. Edge Partition

By using the above methodology, we divide the edges ofSiC4-IIi,j. There are four different edges divisions in the case of SiC4-IIi,j. The first edge pack has 2 edges cd, where degc=1 and degd=2. The second edge bundle consists of 2i+2 edges, where degc=2 and degd=2. The third edge parcel formed by 12i+8j−14 edges cd, where degc=2 and degd=3. The forth edge pack is formed by15ij−10j−18i+10 edges cd, where degc=3 and degd=3, respectively. These values are given in Table 4.Table 4
Division of edges forSiC4-IIi,j.
(degc, degd)Cardinality(1,2)2(2,2)2i+2(2,3)12i+8j−14(3,3)15ij−10j−18i+10


## 5.1. Vertex Partition

According to the degree of vertices, there are three types of vertices. The vertices of one, two, and three degrees are represented asV1, V2 and V3, respectively. By utilizing Table 1 and MATLAB, we will calculate the generalization of the formulas of nodes in Table 2. The total vertices and total edges explained in Table 3.Table 1
Vertex partition ofSiC4-IIi,j.
[i,j][1][1, 2][1, 3][1, 2][2][2, 3][1, 3][2, 3][3]V1222222222V281624122028162432V302461830123456Table 2
Vertex degree with corresponding cardinality.
degcTotal vertexV12V28i+4j−4V310ij−8i−4j+2Table 3
Cardinality of nodes and edges forSiC4-IIi,j.
Total verticesTotal edges10ij15ij−4i−2j


## 5.2. Edge Partition

By using the above methodology, we divide the edges ofSiC4-IIi,j. There are four different edges divisions in the case of SiC4-IIi,j. The first edge pack has 2 edges cd, where degc=1 and degd=2. The second edge bundle consists of 2i+2 edges, where degc=2 and degd=2. The third edge parcel formed by 12i+8j−14 edges cd, where degc=2 and degd=3. The forth edge pack is formed by15ij−10j−18i+10 edges cd, where degc=3 and degd=3, respectively. These values are given in Table 4.Table 4
Division of edges forSiC4-IIi,j.
(degc, degd)Cardinality(1,2)2(2,2)2i+2(2,3)12i+8j−14(3,3)15ij−10j−18i+10


## 6. Basic Outcomes for Silicon CarbideSiC4-IIi,j

In this segment, we will calculate ev-degree- and ve-degree-dependent T-indices such as the ev-degree M-index, first ve-degree beta M-index, the second ve-degree M-index, ev-degree Randic index, ve-degree ABC-index, ve-degree geometric index, and ve-degree sum connectivity index of silicon carbideSiC4-IIi,j.


### 6.1. The Ev-Deg-Based Zagreb Index

By the help of Table5, we can calculate the ev-deg M-index for SiC4-IIi,j as given below:
(12)MevSiC4−IIi,j=∑eεESiC4−IIi,jdegevè2=2×32+2i−2×42+12i+8j−14×52+15ij−10j−18i+10×62=540ij−316i−160j+60.Table 5
Ev-degree ofSiC4-IIi,j.
(degc, degd)Ev-degreeCardinality(1,2)32(2,2)42i+2(2,3)512i+8j−14(3,3)615ij−10j−18i+10


### 6.2. The First Ve-Deg-Based Zagreb Alpha Index

With the help of basic definition and Table6, we are able to estimate the ve-deg M-index of SiC4-IIi,j for i,j≥2:
(13)M1αveSiC4−IIi,j=∑vεVSiC4−IIi,jdegvev2=2×22+2×32+4i+2×52+4i+4j−8×62+2×62+4i+4j−8×72+4i−4×82+10ij−16i−8j+12×92=810ij−600i−308j+178.Table 6
Ve-degree ofSiC4-IIi,j for all i,j≥2.
degcVe-degreeCardinality122232240254i+2264i+4j−8362374i+4j−8384i−43910ij−16i−8j+12


### 6.3. The First Ve-Deg-Based Zagreb Beta Index

Let we have 2D graph ofSiC4-IIi,j; then by utilizing the values given in Table 7 of the end vertices of the edges, we can calculate the M1βve-index as follows:
(14)M1βveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec+degved=2×5+2×8+2i×10+2×11+4×12+6i+8j−18×13+2i+2×12+2i−2×14+2i−2×13+2×14+2i−2×16+4i+4j−12×16+4i−4×17+15ij−28i−14j+26×12=270ij−164i−56j+36.Table 7
Ve-degree of end vertices of each edges ofSiC4-IIi,j.
(degc, degd)Ev-degreeCardinality(2,1)(3,2)2(2,2)(5,3)2(2,2)(5,5)2i(3,2)(6,5)2(3,2)(6,6)4(3,2)(7,6)6i+8j−18(3,2)(7,5)2i+2(3,2)(8,6)2i−2(3,2)(8,5)2i−2(3,3)(7,7)2(3,3)(8,8)2i−2(3,3)(9,7)4i+4j−12(3,3)(9,8)4i−4(3,3)(9,9)15ij−28i−14j+26


### 6.4. The Second Ve-Deg-Based Zagreb Index

Consider that we have a planner structure ofSiC4-IIi,j; then by definition and Table 7, we can easily suggest the general results of second ve-deg-dependent M-index:
(15)M2veSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec×degved=2×6+2×15+2i×25+2×30+4×36+6i+8j−18×42+2i+2×35+2i−2×48+2i−2×40+2×49+2i−2×64+4i+4j−12×63+4i−4×72+15ij−28i−14j+26×81=1215ij−1052i−546j+416.


### 6.5. The Ve-Deg-Based Randic Index

On the biases of Table7 of edge division for i,j≥2, we can estimate the ve-deg-related R-index as
(16)RveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec×degved−1/2=2×6−1/2+2×15−1/2+2i×25−1/2+2×30−1/2+4×36−1/2+6i+8j−18×42−1/2+2i+2×35−1/2+2i−2×48−1/2+2i−2×40−1/2+2×49−1/2+2i−2+4i+4j−12×63−1/2+4i−4×72−1/2+15ij−28i−14j+26×81−1/2=53ij+342+235+13+110+437−443180i+842+437−149j+26+215+230−1042+235−13−110−47−232+905252=1.667ij+0.2i+0.182j+1.207.


### 6.6. The Ev-Deg-Based Randic Index

To calculate the ev-deg-dependent R-index, we use the edge division given in Table5 for the structure of SiC4-IIi,j as given below:
(17)RevSiC4−IIi,j=∑èεESiC4−IIi,jdegveè−1/2=2×3−1/2+2i+2×4−1/2+12i+8j−14×5−1/2+15ij−10j−18i+10×6−1/2=156ij+125−186+1i+85−106j+23−106−45+1=6.12ij−0.981i−0.504j−3.71.


### 6.7. The Ve-Deg-Based Atom-Bond Connectivity Index

Suppose we are dealing with the 2D graph ofSiC4-IIi,j; then, the ve-deg-dependent ABC-index is determined by utilizing Table 7 for i,j≥2 as
(18)ABCveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec+degved−2degvec×degved=2×36+2×615+2i×825+2×930+4×1036+6i+8j−18×1142+2i+21035+2i−2×1248+2i−2×1140+2×1249+2i−2×1464+4i+4j−12×1663+4i−4×157215ij−28i−14j+26×1681=203ij+425+61142+225+1110+144+423+256−1039i+81142+423−569j+22+425+2310+2103−181142−141110+657−144−42−256+959=6.67ij−0.28i−2.242j+1.5.


### 6.8. The Ve-Deg-Based Geometric Arithmetic Index

By using ve-deg of the end vertices of the edges ofSiC4-IIi,j for i,j≥2 given in Table 7, the ve-deg-based geometric arithmetic index is computed as
(19)GAveSiC4−IIi,j=∑cdεESiC4−IIi,j2degvec×degveddegvec+degved=2×65+4158+2i×22510+2×23011+4×3612+6i+8j−18×24213+2i+2×23512+2i−2×24814+2i−2×26416+4i+4j−12×25616+4i−4×27217+15ij−28i−14j+26×28118=15ij+124213+353+837+44013+372+48717−24i+164213+372−14j+465+152+43011−364213+353−837−44013−972−48217+30=15ij−4.158i−2.05j+0.088.


### 6.9. The Ve-Deg-Based Harmonic Index

By using ve-deg of the end vertices of the edges ofSiC4-IIi,j for i,j≥2, given in Table 7,
(20)HveSiC4−IIi,j=∑cdεESiC4−IIi,j2degvec+degved=45+48+4i10+411+812+2×6i+8j−1813+2×2i+212+2×2i−214+2×2i−213+414+2×2i−216+2×4i+4j−1216+2×4i−417+2×15ij−28i−14j+2618=53ij+100049278460i+101234j+111589437580=1.667ij+0.1359i+0.431j+0.026.


### 6.10. The Ve-Deg-Based Sum Connectivity Index

By utilizing Table7 of end vertices of the edges of SiC4-IIi,j for i,j≥2, we can estimate the ve-deg-related sum connectivity index as
(21)XveSiC4−IIi,j=∑uvεESiC4−IIi,jdegveu+degvev−1/2=25+28+2i10+211+412+6i+8j−1813+2i+212+2i−214+2i−213+211+2i−216+4i+4j−1216+4i−417+15ij−28i−14j+2618=52ij+210−1613+214+417−2832+32i+813−1432+1j+25−2932+211−153−213−417−72=3.53ij−6.82i−0.08j−5.35.


## 6.1. The Ev-Deg-Based Zagreb Index

By the help of Table5, we can calculate the ev-deg M-index for SiC4-IIi,j as given below:
(12)MevSiC4−IIi,j=∑eεESiC4−IIi,jdegevè2=2×32+2i−2×42+12i+8j−14×52+15ij−10j−18i+10×62=540ij−316i−160j+60.Table 5
Ev-degree ofSiC4-IIi,j.
(degc, degd)Ev-degreeCardinality(1,2)32(2,2)42i+2(2,3)512i+8j−14(3,3)615ij−10j−18i+10


## 6.2. The First Ve-Deg-Based Zagreb Alpha Index

With the help of basic definition and Table6, we are able to estimate the ve-deg M-index of SiC4-IIi,j for i,j≥2:
(13)M1αveSiC4−IIi,j=∑vεVSiC4−IIi,jdegvev2=2×22+2×32+4i+2×52+4i+4j−8×62+2×62+4i+4j−8×72+4i−4×82+10ij−16i−8j+12×92=810ij−600i−308j+178.Table 6
Ve-degree ofSiC4-IIi,j for all i,j≥2.
degcVe-degreeCardinality122232240254i+2264i+4j−8362374i+4j−8384i−43910ij−16i−8j+12


## 6.3. The First Ve-Deg-Based Zagreb Beta Index

Let we have 2D graph ofSiC4-IIi,j; then by utilizing the values given in Table 7 of the end vertices of the edges, we can calculate the M1βve-index as follows:
(14)M1βveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec+degved=2×5+2×8+2i×10+2×11+4×12+6i+8j−18×13+2i+2×12+2i−2×14+2i−2×13+2×14+2i−2×16+4i+4j−12×16+4i−4×17+15ij−28i−14j+26×12=270ij−164i−56j+36.Table 7
Ve-degree of end vertices of each edges ofSiC4-IIi,j.
(degc, degd)Ev-degreeCardinality(2,1)(3,2)2(2,2)(5,3)2(2,2)(5,5)2i(3,2)(6,5)2(3,2)(6,6)4(3,2)(7,6)6i+8j−18(3,2)(7,5)2i+2(3,2)(8,6)2i−2(3,2)(8,5)2i−2(3,3)(7,7)2(3,3)(8,8)2i−2(3,3)(9,7)4i+4j−12(3,3)(9,8)4i−4(3,3)(9,9)15ij−28i−14j+26


## 6.4. The Second Ve-Deg-Based Zagreb Index

Consider that we have a planner structure ofSiC4-IIi,j; then by definition and Table 7, we can easily suggest the general results of second ve-deg-dependent M-index:
(15)M2veSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec×degved=2×6+2×15+2i×25+2×30+4×36+6i+8j−18×42+2i+2×35+2i−2×48+2i−2×40+2×49+2i−2×64+4i+4j−12×63+4i−4×72+15ij−28i−14j+26×81=1215ij−1052i−546j+416.


## 6.5. The Ve-Deg-Based Randic Index

On the biases of Table7 of edge division for i,j≥2, we can estimate the ve-deg-related R-index as
(16)RveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec×degved−1/2=2×6−1/2+2×15−1/2+2i×25−1/2+2×30−1/2+4×36−1/2+6i+8j−18×42−1/2+2i+2×35−1/2+2i−2×48−1/2+2i−2×40−1/2+2×49−1/2+2i−2+4i+4j−12×63−1/2+4i−4×72−1/2+15ij−28i−14j+26×81−1/2=53ij+342+235+13+110+437−443180i+842+437−149j+26+215+230−1042+235−13−110−47−232+905252=1.667ij+0.2i+0.182j+1.207.


## 6.6. The Ev-Deg-Based Randic Index

To calculate the ev-deg-dependent R-index, we use the edge division given in Table5 for the structure of SiC4-IIi,j as given below:
(17)RevSiC4−IIi,j=∑èεESiC4−IIi,jdegveè−1/2=2×3−1/2+2i+2×4−1/2+12i+8j−14×5−1/2+15ij−10j−18i+10×6−1/2=156ij+125−186+1i+85−106j+23−106−45+1=6.12ij−0.981i−0.504j−3.71.


## 6.7. The Ve-Deg-Based Atom-Bond Connectivity Index

Suppose we are dealing with the 2D graph ofSiC4-IIi,j; then, the ve-deg-dependent ABC-index is determined by utilizing Table 7 for i,j≥2 as
(18)ABCveSiC4−IIi,j=∑cdεESiC4−IIi,jdegvec+degved−2degvec×degved=2×36+2×615+2i×825+2×930+4×1036+6i+8j−18×1142+2i+21035+2i−2×1248+2i−2×1140+2×1249+2i−2×1464+4i+4j−12×1663+4i−4×157215ij−28i−14j+26×1681=203ij+425+61142+225+1110+144+423+256−1039i+81142+423−569j+22+425+2310+2103−181142−141110+657−144−42−256+959=6.67ij−0.28i−2.242j+1.5.


## 6.8. The Ve-Deg-Based Geometric Arithmetic Index

By using ve-deg of the end vertices of the edges ofSiC4-IIi,j for i,j≥2 given in Table 7, the ve-deg-based geometric arithmetic index is computed as
(19)GAveSiC4−IIi,j=∑cdεESiC4−IIi,j2degvec×degveddegvec+degved=2×65+4158+2i×22510+2×23011+4×3612+6i+8j−18×24213+2i+2×23512+2i−2×24814+2i−2×26416+4i+4j−12×25616+4i−4×27217+15ij−28i−14j+26×28118=15ij+124213+353+837+44013+372+48717−24i+164213+372−14j+465+152+43011−364213+353−837−44013−972−48217+30=15ij−4.158i−2.05j+0.088.


## 6.9. The Ve-Deg-Based Harmonic Index

By using ve-deg of the end vertices of the edges ofSiC4-IIi,j for i,j≥2, given in Table 7,
(20)HveSiC4−IIi,j=∑cdεESiC4−IIi,j2degvec+degved=45+48+4i10+411+812+2×6i+8j−1813+2×2i+212+2×2i−214+2×2i−213+414+2×2i−216+2×4i+4j−1216+2×4i−417+2×15ij−28i−14j+2618=53ij+100049278460i+101234j+111589437580=1.667ij+0.1359i+0.431j+0.026.


## 6.10. The Ve-Deg-Based Sum Connectivity Index

By utilizing Table7 of end vertices of the edges of SiC4-IIi,j for i,j≥2, we can estimate the ve-deg-related sum connectivity index as
(21)XveSiC4−IIi,j=∑uvεESiC4−IIi,jdegveu+degvev−1/2=25+28+2i10+211+412+6i+8j−1813+2i+212+2i−214+2i−213+211+2i−216+4i+4j−1216+4i−417+15ij−28i−14j+2618=52ij+210−1613+214+417−2832+32i+813−1432+1j+25−2932+211−153−213−417−72=3.53ij−6.82i−0.08j−5.35.


## 7. Numerical Outcomes

In this segment, we discuss numerical outcomes relevant to ev-degree- and ve-degree-based T-indices for silicon carbideSiC4-IIi,j. We will use different values of i,j to check the variation at different points. The values of all the above mentioned topological indices increase, when we increase the input values (i or j). It is clear from Table 8 that second ve-degree-based Randic index has highest variation in outcomes when the values of input parameters increased. The numerical values of all the ten topological indices are given in Tables 8 and 9.Table 8
Numerical calculations of TIs forSiC4-IIi,j.
[i,j]MevM1aveM1βveM2veRve[1]1248086333.254[2]12686150267620808.635[3]349247441806655117.35[4]6796950634761346429.39[5]111801588856862293644.60[6]166442389084363456863.49[7]2318833512117264876585.55Table 9
Numerical calculations for silicon carbideSiC4-IIi,j.
[i, j]RevABCveGAveHveXve[1]0.9257.658.882.485-8.96[2]17.827.1447.678.284-5.03[3]46.9159.97116.4617.3353.72[4]88.27106.14215.2530.0123.53[5]139.36165.65344.08845.6443.9[6]207.72239.5502.8464.8880.33[7]285.77324.69691.63288.84119.32


## 8. Graphical Representation

An important method of visually illustrating relationships in the data is graphing. The graphs are used when the amount or complexity of data presented in the text cannot be properly described in less space or with less text. The graph is an easy method to check the behaviour of topological index. Numerical method is bit longer than graphical representation. Use the numerical results given in Tables7 and 8 for graphing the topological indices. The graphs of all ten indices are shown in Figures 3–7. These graphs show comparison between different ev-degree- and ve-degree-based topological indices. In this article, the graphs are constructed on the small values of input parameters i and j.Figure 3
(a) Ev-deg M-index and (b) first ve-deg Zagreb alpha index.
(a)(b)Figure 4
(a) First ve-deg M-beta index and (b) second ve-deg M-index.
(a)(b)Figure 5
(a)Ve-deg-based R-index and (b) ev-deg-based R-index.
(a)(b)Figure 6
(a) Ve-deg-based ABC-index and (b) ve-degree-based GA-index.
(a)(b)Figure 7
(a) Ve-deg-based harmonic index and (b) ve-deg-based sum connectivity index.
(a)(b)


## 9. Conclusion

In this article, we investigated the ev-deg and ve-deg topological qualities of the silicon carbide SIC4-II[i; j], for instance, ve-deg M-index, ev-deg R-index, ve-deg ABC-index, ve-deg GA-index, ve-deg H-index, and ve-deg. SC-index. As a rough, silicon carbide is widely used for the production of polishes, granulating wheels, abrasive apparatuses, hard earthenware production, car parts, resistant linings, high temperature blocks, warming components, wear-safe parts for syphons, and even diamonds. It is also a popular material in the hardware industry, where it is used to make LEDs and semiconductor electronic gadgets. Furthermore, the principal risks of this material were identified to be silicon carbides residue and filaments provided during the handling. The SiC residue can irritate the eyes, coatings, and the upper respiratory system, as well as cause lung cancer and fibrosis. Due to high applications of silicon carbide in almost every electronics devices, we studied the specific structure of SiC with the help of advanced type of topological indices. The future of ev-deg- and ve-deg-related T-indices is very bright and rich to investigate the further characterizes of many structures and graphs.



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*Source: 3188993-2022-04-07.xml*