A method for making recessed or projecting subsequent patterns in an underlayer , the method comprising at least: - a step of making prior patterns in a carbon printable layer on top of the underlayer , wherein making of the prior patterns comprises a nanometric printing of the printable layer , - at least one step of modifying the underlayer by ion implantation within the underlayer , the implantation being carried out throughout the printable layer , the implantation parameters comprise in particular a direction of implantation and wherein the direction of implantation is perpendicular to a main plane in which the underlayer extends, the implantation parameters being selected so as to form in the underlayer areas modified by the implantation and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that depends on the prior patterns, the ions being selected from among the ions: hydrogen (H 2 ), helium (He), argon (Ar) or nitrogen (N 2 ); - after the modification step, at least one step of removing by etching the modified areas by implantation, selectively with regards to the non-implanted areas, so as to leave the non-modified areas defining the subsequent patterns in place, characterised in that: the step of making the prior patterns in the carbon printable layer leaves residual thicknesses of printable layer in place in the bottom of the patterns, the printable layer then forming a continuous layer covering the underlayer , the implantation being carried out throughout the printable layer comprising the prior patterns and said residual thicknesses , and in that the residual thickness in the bottom of the patterns is larger than or equal to 20 nanometres (10 -9 metres) and preferably larger than or equal to 30 nm and is enough to form a barrier which traps carbon atoms pulled off the carbon printable layer during said implantation so as to prevent these atoms from penetrating inside the underlayer . - a step of making prior patterns in a carbon printable layer on top of the underlayer , wherein making of the prior patterns comprises a nanometric printing of the printable layer , - at least one step of modifying the underlayer by ion implantation within the underlayer , the implantation being carried out throughout the printable layer , the implantation parameters comprise in particular a direction of implantation and wherein the direction of implantation is perpendicular to a main plane in which the underlayer extends, the implantation parameters being selected so as to form in the underlayer areas modified by the implantation and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that depends on the prior patterns, the ions being selected from among the ions: hydrogen (H 2 ), helium (He), argon (Ar) or nitrogen (N 2 ); - after the modification step, at least one step of removing by etching the modified areas by implantation, selectively with regards to the non-implanted areas, so as to leave the non-modified areas defining the subsequent patterns in place, the step of making the prior patterns in the carbon printable layer leaves residual thicknesses of printable layer in place in the bottom of the patterns, the printable layer then forming a continuous layer covering the underlayer , the implantation being carried out throughout the printable layer comprising the prior patterns and said residual thicknesses , and in that the residual thickness in the bottom of the patterns is larger than or equal to 20 nanometres (10 -9 metres) and preferably larger than or equal to 30 nm and is enough to form a barrier which traps carbon atoms pulled off the carbon printable layer during said implantation so as to prevent these atoms from penetrating inside the underlayer . <EOS>