A multi-spectral imaging system comprising: a plurality of super pixel groups arranged in an array, each super pixel group in the plurality of super pixel groups comprising: a plurality of pixels, implemented in a complementary metal oxide, CMOS, imaging sensor, for capturing first image data in response to visual light, VL; and an infrared, IR, imaging pixel for capturing second image data in response to IR wavelength ranges between 850 nm and 14000000 nm; a carrier, the plurality of super pixel groups are disposed on the carrier; and a readout assembly operatively connected to the plurality of super pixel groups, the readout assembly having a first column readout circuit connected to the VL imaging pixels and a second column readout circuit connected to the IR imaging pixels; wherein the IR imaging pixels are configured to generate thermal signals and the VL imaging sensors are configured to be operated after a presence of a target is detected based on the thermal signals, wherein the multi-spectral imaging system further comprises a controller communicatively connected to the plurality of the super pixel groups, the controller being configured to operate at least one of the VL imaging pixels and the IR imaging pixels; and switching elements connected to the controller to switch the multi-spectral imaging system between an IR imaging mode and a VL imaging mode, wherein when the multi-spectral imaging system in the IR imaging mode, the VL imaging pixels are deactivated, and wherein when the multi-spectral imaging system in the VL imaging mode, the IR imaging pixels are deactivated. a plurality of super pixel groups arranged in an array, each super pixel group in the plurality of super pixel groups comprising: a plurality of pixels, implemented in a complementary metal oxide, CMOS, imaging sensor, for capturing first image data in response to visual light, VL; and an infrared, IR, imaging pixel for capturing second image data in response to IR wavelength ranges between 850 nm and 14000000 nm; a carrier, the plurality of super pixel groups are disposed on the carrier; and a plurality of pixels, implemented in a complementary metal oxide, CMOS, imaging sensor, for capturing first image data in response to visual light, VL; and an infrared, IR, imaging pixel for capturing second image data in response to IR wavelength ranges between 850 nm and 14000000 nm; a carrier, the plurality of super pixel groups are disposed on the carrier; and a readout assembly operatively connected to the plurality of super pixel groups, the readout assembly having a first column readout circuit connected to the VL imaging pixels and a second column readout circuit connected to the IR imaging pixels; wherein the IR imaging pixels are configured to generate thermal signals and the VL imaging sensors are configured to be operated after a presence of a target is detected based on the thermal signals, wherein the multi-spectral imaging system further comprises a controller communicatively connected to the plurality of the super pixel groups, the controller being configured to operate at least one of the VL imaging pixels and the IR imaging pixels; and switching elements connected to the controller to switch the multi-spectral imaging system between an IR imaging mode and a VL imaging mode, wherein when the multi-spectral imaging system in the IR imaging mode, the VL imaging pixels are deactivated, and wherein when the multi-spectral imaging system in the VL imaging mode, the IR imaging pixels are deactivated. <EOS>