mhurhangee/patent-ind-claim-en huggingface dataset:
A method of forming a component from an alloy sheet of aluminium alloy or magnesium alloy material having at least a Solvus temperature and a Solidus temperature of a precipitation hardening phase, the method comprising the steps of: a. heating the sheet to above its Solvus temperature; b. initiating forming the heated sheet between matched tools of a die press and forming by means of plastic deformation towards a final shape whilst allowing the average temperature of the sheet to reduce at a first predetermined rate A; wherein said sheet is formed to at least 50% of its final shape; c. interrupting the forming of the sheet for a pre-determined first interruption period P1 prior to achieving said final shape; and, during the interrupt holding the sheet of material with reduced or no deformation and allowing the average temperature of the sheet to reduce at a second pre-determined rate B lower than or equal to the first predetermined rate in order to allow for a reduction in dislocations; d. maintaining the interrupt step for a time such as to ensure the Dislocation Density is reduced whilst avoiding the precipitation of unwanted phases; e. completing the forming of the heated sheet into the final shape whilst allowing the sheet to cool at a third rate C greater than said second rate B. a. heating the sheet to above its Solvus temperature; b. initiating forming the heated sheet between matched tools of a die press and forming by means of plastic deformation towards a final shape whilst allowing the average temperature of the sheet to reduce at a first predetermined rate A; wherein said sheet is formed to at least 50% of its final shape; c. interrupting the forming of the sheet for a pre-determined first interruption period P1 prior to achieving said final shape; and, during the interrupt holding the sheet of material with reduced or no deformation and allowing the average temperature of the sheet to reduce at a second pre-determined rate B lower than or equal to the first predetermined rate in order to allow for a reduction in dislocations; d. maintaining the interrupt step for a time such as to ensure the Dislocation Density is reduced whilst avoiding the precipitation of unwanted phases; e. completing the forming of the heated sheet into the final shape whilst allowing the sheet to cool at a third rate C greater than said second rate B.
A layout structure , disposed on a circuit board, comprising a conductive layer used to form a power rail ; and a first connection area (CP1, 414) and a second connection area (CP2, 415) respectively disposed on two terminals (S1, S2) of the power rail ; characterized in that the layout structure further comprises: at least one external conductive wire (EL1, EL2, EL3, EL4) electrically connected between the first connection area (CP1, 414) and the second connection area (CP2, 415) and coupled with the power rail in parallel; and at least one relay connection area , the at least one relay connection area being disposed on the power rail and disposed between the first connection area (CP1, 414) and the second connection area (CP2, 415), the at least one external conductive wire (EL1, EL2, EL3, EL4) comprising a plurality of external sub conductive wires (EL11-EL15, EL21-EL25), wherein the external sub conductive wires (EL11-EL15, EL21-EL25) of a first portion are electrically connected between the at least one relay connection area and the first connection area (CP1, 414); the external sub conductive wires (EL11-EL15, EL21-EL25) of a second portion are electrically connected between the at least one relay connection area and the second connection area (CP2, 415), and wherein the at least one relay connection area comprises a plurality of relay solder joints (MP11-MP14, MP21-MP24, MP31-MP34, MP41-MP44), the relay solder joints (MP11-MP14, MP21-MP24, MP31-MP34, MP41-MP44) being in contact with each other and used to electrically connect the external sub conductive wires (EL11-EL15, EL21-EL25). a conductive layer used to form a power rail ; and a first connection area (CP1, 414) and a second connection area (CP2, 415) respectively disposed on two terminals (S1, S2) of the power rail ; at least one external conductive wire (EL1, EL2, EL3, EL4) electrically connected between the first connection area (CP1, 414) and the second connection area (CP2, 415) and coupled with the power rail in parallel; and at least one relay connection area , the at least one relay connection area being disposed on the power rail and disposed between the first connection area (CP1, 414) and the second connection area (CP2, 415), the at least one external conductive wire (EL1, EL2, EL3, EL4) comprising a plurality of external sub conductive wires (EL11-EL15, EL21-EL25), wherein the external sub conductive wires (EL11-EL15, EL21-EL25) of a first portion are electrically connected between the at least one relay connection area and the first connection area (CP1, 414); the external sub conductive wires (EL11-EL15, EL21-EL25) of a second portion are electrically connected between the at least one relay connection area and the second connection area (CP2, 415), and wherein the at least one relay connection area comprises a plurality of relay solder joints (MP11-MP14, MP21-MP24, MP31-MP34, MP41-MP44), the relay solder joints (MP11-MP14, MP21-MP24, MP31-MP34, MP41-MP44) being in contact with each other and used to electrically connect the external sub conductive wires (EL11-EL15, EL21-EL25).
A polyethylene resin composition comprising: 60 wt% to 90 wt% of an ethylene homopolymer (A) having a melt index of 700 g/10 minutes to 1500 g/10 minutes, as measured at 190°C under a load of 2.16 kg; and 10 wt% to 40 wt% of ethylene or an α-olefin copolymer (B) having 3 to 20 carbon atoms, the polyethylene resin composition having a melt index in the range of 0.6 g to 2.0 g/10 minutes, as measured at 190°C under a load of 2.16 kg, environmental stress crack resistance (ESCR) of 1,000 hours or more, a spiral flow length of 70 cm or greater, and a flexural modulus of 9,000 kgf/cm2 or greater, wherein a ratio (C/D) of a melt index (C) of the polyethylene resin composition, as measured at 190°C under a load of 21.6 kg, to a melt index (D) of the polyethylene resin composition, as measured at 190°C under a load of 2.16 kg, is in the range of 120 to 200. 60 wt% to 90 wt% of an ethylene homopolymer (A) having a melt index of 700 g/10 minutes to 1500 g/10 minutes, as measured at 190°C under a load of 2.16 kg; and 10 wt% to 40 wt% of ethylene or an α-olefin copolymer (B) having 3 to 20 carbon atoms, the polyethylene resin composition having a melt index in the range of 0.6 g to 2.0 g/10 minutes, as measured at 190°C under a load of 2.16 kg, environmental stress crack resistance (ESCR) of 1,000 hours or more, a spiral flow length of 70 cm or greater, and a flexural modulus of 9,000 kgf/cm2 or greater, wherein a ratio (C/D) of a melt index (C) of the polyethylene resin composition, as measured at 190°C under a load of 21.6 kg, to a melt index (D) of the polyethylene resin composition, as measured at 190°C under a load of 2.16 kg, is in the range of 120 to 200.
A non-transitory machine-readable storage medium encoded with instructions executable by a hardware processor of a computing device for predicting wireless access point availability for mobile data offloading from a cellular network, characterised in that the machine-readable storage medium comprises instructions to cause the hardware processor to: generate, for a wireless access point , a mapping for predicting availability of the wireless access point , the mapping specifying: one or more in-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network to which at least one client device has been connected while the at least one client device was also connected to the wireless access point ; one or more border cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, wherein a border cellular tower is a tower to which at least one client device has been connected to i) subsequent to being connected to one of the one or more in-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, and ii) while not being able to connect to the wireless access point ; and one or more out-of-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, wherein an out-of-range cellular tower is a tower to which at least one client device has been connected to i) subsequent to being connected to one of the one or more border cellular towers (210, 220, 230, 240, 422; 504, 604), and ii) while not being able to connect to the wireless access point . one or more in-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network to which at least one client device has been connected while the at least one client device was also connected to the wireless access point ; one or more border cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, wherein a border cellular tower is a tower to which at least one client device has been connected to i) subsequent to being connected to one of the one or more in-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, and ii) while not being able to connect to the wireless access point ; and one or more out-of-range cellular towers (210, 220, 230, 240, 422; 504, 604) of the cellular network, wherein an out-of-range cellular tower is a tower to which at least one client device has been connected to i) subsequent to being connected to one of the one or more border cellular towers (210, 220, 230, 240, 422; 504, 604), and ii) while not being able to connect to the wireless access point .
An integrated circuit, comprising at least: a memory array that stores data; a rectifying circuit that rectifies an alternating current and generates a direct-current voltage; and a logic circuit that reads data stored in the memory array , wherein the memory array includes a first semiconductor element having a first semiconductor layer, the rectifying circuit includes a second semiconductor element having a second semiconductor layer, the logic circuit includes a third semiconductor element having a third semiconductor layer, the first semiconductor element is a memory element (110, 111, 112, 113; 120, 121, 130, 131), the second semiconductor element is a rectifying element , the third semiconductor element is a logic element, the second semiconductor layer is a functional layer exhibiting a rectifying action, the third semiconductor layer is a channel layer of a logic element, characterized in that the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are all formed of the same material including a carbon nanotube, , wherein a total length of the carbon nanotubes present per 1 μm 2 of the third semiconductor layer is 0.7 time or less a total length of the carbon nanotubes present per 1 μm 2 of the second semiconductor layer. a memory array that stores data; a rectifying circuit that rectifies an alternating current and generates a direct-current voltage; and a logic circuit that reads data stored in the memory array , wherein the memory array includes a first semiconductor element having a first semiconductor layer, the rectifying circuit includes a second semiconductor element having a second semiconductor layer, the logic circuit includes a third semiconductor element having a third semiconductor layer, the first semiconductor element is a memory element (110, 111, 112, 113; 120, 121, 130, 131), the second semiconductor element is a rectifying element , the third semiconductor element is a logic element, the second semiconductor layer is a functional layer exhibiting a rectifying action, the third semiconductor layer is a channel layer of a logic element, characterized in that the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are all formed of the same material including a carbon nanotube, , wherein a total length of the carbon nanotubes present per 1 μm 2 of the third semiconductor layer is 0.7 time or less a total length of the carbon nanotubes present per 1 μm 2 of the second semiconductor layer.
A pack of products having a bottom side and an opposite top side , comprising a handle formed over the top side and adapted to be grasped by hand, and formed by at least one turn of a plastic film wrapped around the products over a rotation axis (y) to bind them together, the plastic film covering at least most of the bottom side and being gathered to a reduced width over the top side to form the handle , characterized in that the handle is formed by at least a subsequent turn of the same plastic film wrapped around the products over the same rotation axis (y).
A compact wide-band, low aerodynamic drag antenna, of the so-called "monopole" type, comprising a support base , wherein said antenna comprises a combination of: a plurality of linear ground elements , each having a proximal end and a distal end with respect to said support base, are mounted on said support base at their proximal ends , and having their distal ends free, said linear ground elements extending radially from said base and being designed to provide an electrical ground plane for said antenna ; and a radiating element , mounted to said support base on an upper face thereof and extending in a direction substantially perpendicular to that of said linear ground elements , said radiating element comprising a plurality of rods , each having a proximal end and a distal end with respect to said support base , each of which is secured to the upper face said support base at its proximal end , said rods being arranged parallel one to another and with their proximal ends lying along a closed line.
A lamp comprising: an elongate support , a plurality of light directing members , and a light generating unit; the light directing members being supported by the elongate support at respective different positions along the length of the elongate support , each light directing member being rotatable at least partially around the elongate support to select a rotational position of the light directing member from a respective range of rotational positions of the light directing member ; the light generating unit comprises a plurality of light sources , the light sources being supported by the elongate support at respective different positions along the length of the elongate support , and wherein each light directing member cooperates with a respective one of the light sources so that at any rotational position within said respective range of rotational positions of the light directing member the light directing member receives light from the cooperating light source and directs the light away from the lamp in a direction dependent on the selected rotational position of the light directing member ; characterised in that each light directing member comprises a respective tube which defines a respective interior passage, the light from the light generating unit being directed along the interior passage of the light directing member away from the lamp; and each light directing member is open at both ends of the respective tube, the light from the light generating unit being directed along the interior passage of the light directing member away from the lamp in two respective opposite directions.
A method for resource indication, comprising: sending (S301), by a network device, first signaling to a terminal device, wherein the first signaling comprises N pieces of indication information for indicating symbol-level configuration information, the first signaling is for configuring N slots among more than N slots according to N pieces of symbol-level configuration information, and the symbol-level configuration information is information for configuring a symbol for data transmission in each of the slots; and performing (S302), by the network device, data transmission with the terminal device according to the symbol-level configuration information corresponding to the indication information in the first signaling, wherein when the number of the slots is M, M being larger than N, the N pieces of indication information of the first signaling are for indicating symbol-level configuration information of N third slots in the M slots; and symbol-level configuration information of M-N fourth slots other than the third slots in the M slots is default symbol-level configuration information, wherein the symbol-level configuration information indicates time-domain positions of an uplink data channel and a downlink data channel. sending (S301), by a network device, first signaling to a terminal device, wherein the first signaling comprises N pieces of indication information for indicating symbol-level configuration information, the first signaling is for configuring N slots among more than N slots according to N pieces of symbol-level configuration information, and the symbol-level configuration information is information for configuring a symbol for data transmission in each of the slots; and performing (S302), by the network device, data transmission with the terminal device according to the symbol-level configuration information corresponding to the indication information in the first signaling, wherein when the number of the slots is M, M being larger than N, the N pieces of indication information of the first signaling are for indicating symbol-level configuration information of N third slots in the M slots; and symbol-level configuration information of M-N fourth slots other than the third slots in the M slots is default symbol-level configuration information, wherein the symbol-level configuration information indicates time-domain positions of an uplink data channel and a downlink data channel.
A handheld surgical instrument , comprising: a handpiece comprising a first material having a first thermal conductivity; a motor disposed within the handpiece and including a motor housing ; a heat sink disposed within the handpiece and enclosing the motor, the heat sink being thermally coupled to the motor housing, the heat sink comprising a second material having a second thermal conductivity that is greater in value than the first thermal conductivity; a first coupling ; and a second coupling ; wherein the heat sink includes a first end having external threads and a second end , opposite the first end, having internal threads; the external threads configured to engage with the first coupling and the internal threads configured to engage with the second coupling; and wherein the second coupling holds the motor within the heat sink. a handpiece comprising a first material having a first thermal conductivity; a motor disposed within the handpiece and including a motor housing ; a heat sink disposed within the handpiece and enclosing the motor, the heat sink being thermally coupled to the motor housing, the heat sink comprising a second material having a second thermal conductivity that is greater in value than the first thermal conductivity; a first coupling ; and a second coupling ; wherein the heat sink includes a first end having external threads and a second end , opposite the first end, having internal threads; the external threads configured to engage with the first coupling and the internal threads configured to engage with the second coupling; and wherein the second coupling holds the motor within the heat sink.
A method for preparing spherical silica aerogel granules, comprising: a) mixing a water glass solution and a non-polar organic solvent to prepare a mixed solution; b) adding a surfactant to the mixed solution to form droplets of the water glass solution prior to preparation of a silica sol; c) adding a neutralizing agent to the mixed solution to form a silica sol; d) adding a gelling agent to the silica sol to form a silica gel; e) subjecting the silica gel to solvent substitution and adding a surface modifying agent to the silica gel to hydrophobicize the silica gel; and f) drying the hydrophobicized silica gel, wherein the surfactant in step b) comprises one or more selected from the group consisting of sorbitan monooleate, sorbitan monostearate, sorbitan monopalmitate, and sorbitan monolaurate, and wherein the surfactant in step b) is included at a volume ratio of 3.0 to 9.0% with respect to the mixed solution. a) mixing a water glass solution and a non-polar organic solvent to prepare a mixed solution; b) adding a surfactant to the mixed solution to form droplets of the water glass solution prior to preparation of a silica sol; c) adding a neutralizing agent to the mixed solution to form a silica sol; d) adding a gelling agent to the silica sol to form a silica gel; e) subjecting the silica gel to solvent substitution and adding a surface modifying agent to the silica gel to hydrophobicize the silica gel; and f) drying the hydrophobicized silica gel,
Coolant pump for an engine cooling circuit of a motor vehicle, - with a housing , in which an impeller is arranged to be rotatable about an axis of rotation , which impeller is arranged in the housing between a suction chamber and a pressure chamber , - with a motor connector formed on the housing which motor connector is fluidically connected to the pressure chamber , - with a bypass connector formed on the housing , which bypass connector is fluidically connected to the suction chamber , - with a cooler connector formed on the housing , which cooler connector is fluidically connected to the suction chamber , - with a thermostat valve arranged in the housing in the suction chamber for controlling the bypass connector as a function of the temperature, - wherein the thermostat valve has a temperature-dependent operating actuator and a valve element which is adjustable by the actuator between an open position (OS) for releasing the bypass connector and a closed position (SS) for blocking the bypass connector , - wherein the actuator is designed as a bidirectional, linear actuator , - wherein the thermostat valve is adjusted at low temperatures into its open position (OS) whereas at high temperatures it is adjusted into its closed position (SS) characterised in that - the actuator is arranged to be coaxial to the impeller so that a longitudinal centre axis of the actuator coincides with the axis of rotation of the impeller , and in that the valve element is a flap which can be pivoted about a swivel axis . - with a housing , in which an impeller is arranged to be rotatable about an axis of rotation , which impeller is arranged in the housing between a suction chamber and a pressure chamber , - with a motor connector formed on the housing which motor connector is fluidically connected to the pressure chamber , - with a bypass connector formed on the housing , which bypass connector is fluidically connected to the suction chamber , - with a cooler connector formed on the housing , which cooler connector is fluidically connected to the suction chamber , - with a thermostat valve arranged in the housing in the suction chamber for controlling the bypass connector as a function of the temperature, - wherein the thermostat valve has a temperature-dependent operating actuator and a valve element which is adjustable by the actuator between an open position (OS) for releasing the bypass connector and a closed position (SS) for blocking the bypass connector , - wherein the actuator is designed as a bidirectional, linear actuator , - wherein the thermostat valve is adjusted at low temperatures into its open position (OS) whereas at high temperatures it is adjusted into its closed position (SS) characterised in that - the actuator is arranged to be coaxial to the impeller so that a longitudinal centre axis of the actuator coincides with the axis of rotation of the impeller , and in that the valve element is a flap which can be pivoted about a swivel axis .