A light emitting element comprising: a first n-type semiconductor layer ; a first active layer located above the first n-type semiconductor layer and comprising a first well layer containing indium; a first p-type semiconductor layer located above the first active layer ; a second n-type semiconductor layer located above and in contact with the first p-type semiconductor layer ; a second active layer located above the second n-type semiconductor layer , the second active layer comprising: a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a second p-type semiconductor located above the second active layer , wherein: each of the first n-type semiconductor layer , the first active layer , the first p-type semiconductor layer , the second n-type semiconductor layer , the second active layer , and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer , an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer , and a thickness of the first intermediate layer is less than a thickness of the second well layer . a first n-type semiconductor layer ; a first active layer located above the first n-type semiconductor layer and comprising a first well layer containing indium; a first p-type semiconductor layer located above the first active layer ; a second n-type semiconductor layer located above and in contact with the first p-type semiconductor layer ; a second active layer located above the second n-type semiconductor layer , the second active layer comprising: a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a second p-type semiconductor located above the second active layer , wherein: each of the first n-type semiconductor layer , the first active layer , the first p-type semiconductor layer , the second n-type semiconductor layer , the second active layer , and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer , an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer , and a thickness of the first intermediate layer is less than a thickness of the second well layer . each of the first n-type semiconductor layer , the first active layer , the first p-type semiconductor layer , the second n-type semiconductor layer , the second active layer , and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer , an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer , and a thickness of the first intermediate layer is less than a thickness of the second well layer . <EOS>