A bandgap reference circuit comprising: a first current generator comprising first and second circuit branches respectively comprising first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor, wherein the first current varies proportionally as a function of temperature. a second current generator comprising a third circuit branch comprising a first field effect transistor for generating a second current at a second resistor, wherein the second current varies inversely as a function of temperature; a trimming circuit comprising: a fourth circuit branch comprising a third bipolar transistor which is sized to match the first bipolar transistor; a third current generator comprising a second field effect transistor coupled to a collector and a base of the third bipolar transistor and configured to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current; and a third circuit configured to generate a bandgap reference current based on a summation of the first current and the modified second current; characterized in that the trim control circuit is configured to modify the second current by adding the third current to the second current or subtracting the third current from the second current based on a first trim control signal. a first current generator comprising first and second circuit branches respectively comprising first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor, wherein the first current varies proportionally as a function of temperature. a second current generator comprising a third circuit branch comprising a first field effect transistor for generating a second current at a second resistor, wherein the second current varies inversely as a function of temperature; a trimming circuit comprising: a fourth circuit branch comprising a third bipolar transistor which is sized to match the first bipolar transistor; a third current generator comprising a second field effect transistor coupled to a collector and a base of the third bipolar transistor and configured to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current; and a fourth circuit branch comprising a third bipolar transistor which is sized to match the first bipolar transistor; a third current generator comprising a second field effect transistor coupled to a collector and a base of the third bipolar transistor and configured to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current; and a third circuit configured to generate a bandgap reference current based on a summation of the first current and the modified second current; characterized in that the trim control circuit is configured to modify the second current by adding the third current to the second current or subtracting the third current from the second current based on a first trim control signal. <EOS>