A semiconductor device with a semiconductor body , the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface , wherein - the semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction ; - the first semiconductor layer is more heavily doped than the second semiconductor layer ; - a side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction; - the side surface of the semiconductor body comprises a first partial region and a second partial region ; - the first partial region and the second partial region delimit the first semiconductor layer in regions; - the first partial region delimits the first pn junction in the lateral direction; - the second partial region is spaced apart from the first pn junction in the vertical direction; and - the first partial region is arranged at a first angle (α) and the second partial region is arranged at a second angle (β) with respect to the first pn junction wherein the first angle (α) is larger than the second angle (β); - the side surface comprises a third partial region , the first partial region being arranged between the second partial region and the third partial region , the third partial region directly adjoining the first partial region ; - the semiconductor body further comprises a second pn junction , the third partial region delimiting the second pn junction in the lateral direction; and - the third partial region is arranged at a third angle (γ) with respect to the first pn junction , wherein the third angle (γ) is larger than the first angle (α); and - the third angle (γ) is between 20° and 60° inclusive; and the first angle (α) is constant within the first partial region , the second angle (β) is constant within the second partial region and the third angle (γ) is constant within the third partial region . - the semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction ; - the first semiconductor layer is more heavily doped than the second semiconductor layer ; - a side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction; - the side surface of the semiconductor body comprises a first partial region and a second partial region ; - the first partial region and the second partial region delimit the first semiconductor layer in regions; - the first partial region delimits the first pn junction in the lateral direction; - the second partial region is spaced apart from the first pn junction in the vertical direction; and - the first partial region is arranged at a first angle (α) and the second partial region is arranged at a second angle (β) with respect to the first pn junction wherein the first angle (α) is larger than the second angle (β); - the side surface comprises a third partial region , the first partial region being arranged between the second partial region and the third partial region , the third partial region directly adjoining the first partial region ; - the semiconductor body further comprises a second pn junction , the third partial region delimiting the second pn junction in the lateral direction; and - the third partial region is arranged at a third angle (γ) with respect to the first pn junction , wherein the third angle (γ) is larger than the first angle (α); and - the third angle (γ) is between 20° and 60° inclusive; and <EOS>