A measurement device comprising: a suspended semiconductor wire ; a first control circuit designed to apply a first electrical signal between first (105c-1) and second (105c-2) ends of the suspended semiconductor wire; and a second control circuit designed to measure a second electrical signal (V) between first (105c INT-1 ) and second (105c INT-2 ) intermediate nodes of the suspended semiconductor wire, wherein the first electrical signal is a bias current (I1) between the first (105c-1) and second (105c-2) ends of the suspended semiconductor wire , and wherein the second control circuit is configured to measure the voltage (V) between the first (105c INT-1 ) and second (105c INT-2 ) intermediate nodes of the suspended semiconductor wire (105c-1), the device further comprising a first probe wire made of a semiconductor material, coupling the first intermediate node (105c INT-1 ) of the suspended semiconductor wire to a third conductive terminal , and a second probe wire made of a semiconductor material, coupling the second intermediate node (105c INT-2 ) of the suspended semiconductor wire to a fourth conductive terminal , the second control circuit being connected to the third and fourth conductive terminals, wherein the first probe wire has a thermal resistance (R TH5 ) higher than the thermal resistance (R TH3 ) of a first lateral section of the suspended semiconductor wire , extending from the first end (105c-1) of the suspended semiconductor wire to the first intermediate node (105c INT-1 ) of the suspended semiconductor wire, and wherein the second probe wire has a thermal resistance (R TH6 ) greater than the thermal resistance (R TH4 ) of a second lateral section of the suspended semiconductor wire , extending from the second end (105c-2) of the suspended semiconductor wire to the second intermediate node (105c INT-2 ) of the suspended semiconductor wire. a suspended semiconductor wire ; a first control circuit designed to apply a first electrical signal between first (105c-1) and second (105c-2) ends of the suspended semiconductor wire; and a second control circuit designed to measure a second electrical signal (V) between first (105c INT-1 ) and second (105c INT-2 ) intermediate nodes of the suspended semiconductor wire, wherein the first electrical signal is a bias current (I1) between the first (105c-1) and second (105c-2) ends of the suspended semiconductor wire , and wherein the second control circuit is configured to measure the voltage (V) between the first (105c INT-1 ) and second (105c INT-2 ) intermediate nodes of the suspended semiconductor wire (105c-1), the device further comprising a first probe wire made of a semiconductor material, coupling the first intermediate node (105c INT-1 ) of the suspended semiconductor wire to a third conductive terminal , and a second probe wire made of a semiconductor material, coupling the second intermediate node (105c INT-2 ) of the suspended semiconductor wire to a fourth conductive terminal , the second control circuit being connected to the third and fourth conductive terminals, wherein the first probe wire has a thermal resistance (R TH5 ) higher than the thermal resistance (R TH3 ) of a first lateral section of the suspended semiconductor wire , extending from the first end (105c-1) of the suspended semiconductor wire to the first intermediate node (105c INT-1 ) of the suspended semiconductor wire, and wherein the second probe wire has a thermal resistance (R TH6 ) greater than the thermal resistance (R TH4 ) of a second lateral section of the suspended semiconductor wire , extending from the second end (105c-2) of the suspended semiconductor wire to the second intermediate node (105c INT-2 ) of the suspended semiconductor wire. <EOS>