Micro-Electromechanical or Nano-Electromechanical detection device made of thin layer, comprising: - a support including a face defining a plane , - at least one beam with first and second ends and that can move relative to the support , and - means of detecting beam displacement, adapted to output a signal that depends on the displacement, wherein the beam is anchored to the support through the first end and is perpendicular to said plane , and the second end of the beam comprises at least one reception zone , that can receive one or several particles that can provoke or modify displacement of the beam in order to determine at least one physical property of the particle(s) from the signal output by the displacement detection means , the detection device being characterized in that : - the detection means are located between the reception zone and the support , - the detection means are produced by thin layer deposition technique and are integrated to the detection device, and - the detection means are chosen from among piezoresistive strain gauge detection means, capacitive detection means and piezoelectric detection means. - a support including a face defining a plane , - at least one beam with first and second ends and that can move relative to the support , and - means of detecting beam displacement, adapted to output a signal that depends on the displacement, wherein the beam is anchored to the support through the first end and is perpendicular to said plane , and the second end of the beam comprises at least one reception zone , that can receive one or several particles that can provoke or modify displacement of the beam in order to determine at least one physical property of the particle(s) from the signal output by the displacement detection means , the detection device being characterized in that : - the detection means are located between the reception zone and the support , - the detection means are produced by thin layer deposition technique and are integrated to the detection device, and - the detection means are chosen from among piezoresistive strain gauge detection means, capacitive detection means and piezoelectric detection means. wherein the beam is anchored to the support through the first end and is perpendicular to said plane , and the second end of the beam comprises at least one reception zone , that can receive one or several particles that can provoke or modify displacement of the beam in order to determine at least one physical property of the particle(s) from the signal output by the displacement detection means , the detection device being characterized in that : - the detection means are located between the reception zone and the support , - the detection means are produced by thin layer deposition technique and are integrated to the detection device, and - the detection means are chosen from among piezoresistive strain gauge detection means, capacitive detection means and piezoelectric detection means. - the detection means are located between the reception zone and the support , - the detection means are produced by thin layer deposition technique and are integrated to the detection device, and - the detection means are chosen from among piezoresistive strain gauge detection means, capacitive detection means and piezoelectric detection means. <EOS>