A detector (1;1a;1b;1c;1d) for a Compton camera, comprising: a plurality of first radiation scattering layers stacked in a first direction (Z); a plurality of second radiation scattering layers stacked in the first direction (Z); and a plurality of radiation absorption layers stacked in the first direction (Z) and disposed between the plurality of first radiation scattering layers and the plurality of second radiation scattering layer , such that the plurality of first radiation scattering layers , the plurality of radiation absorption layers and the plurality of second radiation scattering layers are arranged in parallel to each other in a stacked state, and at a predetermined pitch with respect to each other, wherein the plurality of first radiation scattering layers are disposed on one side with respect to the plurality of radiation absorption layers , and wherein the plurality of second radiation scattering layers are disposed on another side with respect to the plurality of radiation absorption layers ; wherein the plurality of the first radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a first detector, and wherein the plurality of the second radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a second detector; wherein the plurality of the first radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on one side with respect to the radiation absorption layer ; and wherein the plurality of the second radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on the other side with respect to the radiation absorption layer ; wherein silicon (Si) is used as a material for the first and second radiation scattering layers; and wherein cadmium telluride (CdTe) or cadmium zinc telluride (CdZnTe) is used as a material for the radiation absorption layer. a plurality of first radiation scattering layers stacked in a first direction (Z); a plurality of second radiation scattering layers stacked in the first direction (Z); and a plurality of radiation absorption layers stacked in the first direction (Z) and disposed between the plurality of first radiation scattering layers and the plurality of second radiation scattering layer , such that the plurality of first radiation scattering layers , the plurality of radiation absorption layers and the plurality of second radiation scattering layers are arranged in parallel to each other in a stacked state, and at a predetermined pitch with respect to each other, wherein the plurality of first radiation scattering layers are disposed on one side with respect to the plurality of radiation absorption layers , and wherein the plurality of second radiation scattering layers are disposed on another side with respect to the plurality of radiation absorption layers ; wherein the plurality of the first radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a first detector, and wherein the plurality of the second radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a second detector; wherein the plurality of the first radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on one side with respect to the radiation absorption layer ; and wherein the plurality of the second radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on the other side with respect to the radiation absorption layer ; wherein silicon (Si) is used as a material for the first and second radiation scattering layers; and wherein cadmium telluride (CdTe) or cadmium zinc telluride (CdZnTe) is used as a material for the radiation absorption layer. <EOS>