A light emitting device comprising: a flip-chip light emitting diode (LED) semiconductor die comprising an upper surface , a lower surface opposite to the upper surface , an edge surface , and a set of electrodes , wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die , and the set of electrodes is disposed on the lower surface of the LED semiconductor die ; a photoluminescent structure comprising an upper surface , a lower surface opposite to the upper surface of the photoluminescent structure , and an edge surface extending between the upper surface and the lower surface of the photoluminescent structure , wherein the lower surface of the photoluminescent structure covers at least the upper surface of the LED semiconductor die , and the photoluminescent structure comprises a photoluminescent layer and a supernatant light-transmitting layer disposed on the LED semiconductor die ; and a reflective structure at least partially and directly covering the edge surface of the LED semiconductor die and the edge surface of the photoluminescent structure ; wherein a first horizontal direction (D1) and a second horizontal direction (D2) perpendicular to the first horizontal direction are specified along a length and a width of the light emitting device, respectively; and the edge surface of the photoluminescent structure comprises two pairs of side edges , wherein one pair of the side edges of the photoluminescent structure perpendicular to the second horizontal direction is covered by the reflective structure , and another pair of the side edges of the photoluminescent structure perpendicular to the first horizontal direction is not covered by the reflective structure . a flip-chip light emitting diode (LED) semiconductor die comprising an upper surface , a lower surface opposite to the upper surface , an edge surface , and a set of electrodes , wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die , and the set of electrodes is disposed on the lower surface of the LED semiconductor die ; a photoluminescent structure comprising an upper surface , a lower surface opposite to the upper surface of the photoluminescent structure , and an edge surface extending between the upper surface and the lower surface of the photoluminescent structure , wherein the lower surface of the photoluminescent structure covers at least the upper surface of the LED semiconductor die , and the photoluminescent structure comprises a photoluminescent layer and a supernatant light-transmitting layer disposed on the LED semiconductor die ; and a reflective structure at least partially and directly covering the edge surface of the LED semiconductor die and the edge surface of the photoluminescent structure ; wherein a first horizontal direction (D1) and a second horizontal direction (D2) perpendicular to the first horizontal direction are specified along a length and a width of the light emitting device, respectively; and the edge surface of the photoluminescent structure comprises two pairs of side edges , wherein one pair of the side edges of the photoluminescent structure perpendicular to the second horizontal direction is covered by the reflective structure , and another pair of the side edges of the photoluminescent structure perpendicular to the first horizontal direction is not covered by the reflective structure . <EOS>