A method comprising: ionizing a sample using an ion source and analyze the sample using a mass analyzer ; raising the pressure in the ion source to a sputtering pressure by supplying a flow of a sputtering gas and isolating the ion source from the high vacuum pump , wherein either: i) isolating the ion source from the high vacuum pump includes at least partially closing an opening from the ion source to a vacuum manifold using a probe having an insulative cone shaped distal end for at least partially blocking the opening, and a conductive shaft material for sputtering; or ii) isolating the ion source from the high vacuum pump includes at least partially closing either an opening from the ion source to a vacuum manifold or an entrance to the high vacuum pump , including moving a plate to block at least a portion of the opening or the entrance, wherein the plate comprises or is coated in a conductive material; sputtering the conductive material on a surface of the ion source; reducing the pressure in the ion source to an operating pressure by reducing the flow of the sputtering gas and restoring connectivity between the ion source and the high vacuum pump; and ionizing a second sample using the ion source and analyze the second sample using the mass analyzer. ionizing a sample using an ion source and analyze the sample using a mass analyzer ; raising the pressure in the ion source to a sputtering pressure by supplying a flow of a sputtering gas and isolating the ion source from the high vacuum pump , wherein either: i) isolating the ion source from the high vacuum pump includes at least partially closing an opening from the ion source to a vacuum manifold using a probe having an insulative cone shaped distal end for at least partially blocking the opening, and a conductive shaft material for sputtering; or ii) isolating the ion source from the high vacuum pump includes at least partially closing either an opening from the ion source to a vacuum manifold or an entrance to the high vacuum pump , including moving a plate to block at least a portion of the opening or the entrance, wherein the plate comprises or is coated in a conductive material; sputtering the conductive material on a surface of the ion source; i) isolating the ion source from the high vacuum pump includes at least partially closing an opening from the ion source to a vacuum manifold using a probe having an insulative cone shaped distal end for at least partially blocking the opening, and a conductive shaft material for sputtering; or ii) isolating the ion source from the high vacuum pump includes at least partially closing either an opening from the ion source to a vacuum manifold or an entrance to the high vacuum pump , including moving a plate to block at least a portion of the opening or the entrance, wherein the plate comprises or is coated in a conductive material; sputtering the conductive material on a surface of the ion source; reducing the pressure in the ion source to an operating pressure by reducing the flow of the sputtering gas and restoring connectivity between the ion source and the high vacuum pump; and ionizing a second sample using the ion source and analyze the second sample using the mass analyzer. <EOS>