Photo-emitting and/or photo-receiving diode array device , comprising at least: - a stack of at least one first and one second semiconductor layers doped according to different types of conductivity, each one of the diodes comprising a portion of the first layer superimposed on a portion of the second layer ; - first trenches passing through the entire thickness of the second layer and at least one part of the thickness of the first layer and surrounding at least one region of the stack wherein several diodes are formed; - dielectric portions arranged in the first trenches and covering the lateral flanks of said region of the stack over the entire thickness of the second layer and a first part of the thickness of the first layer ; - first electrically conductive portions arranged in the first trenches , covering the lateral flanks of said region of the stack over a second part of the thickness of the first layer not covered by the dielectric portions and/or covering bottom walls of the first trenches , and forming at least one part of the first electrodes of the diodes formed in said region of the stack; - at least one second trench partially passing through the thickness of the first layer from a first face of the first layer opposite a second face of the first layer facing the second layer , and separating the portions of the first layer from the diodes formed in said region of the stack without passing through the interface between the first and second layers; - several second electrodes electrically insulated from one another and each one electrically connected to one of the portions of the second layer of the diodes formed in said region of the stack; and wherein the portions of the second layer of the diodes formed in said region of the stack form a continuous semiconductor portion which is not crossed by the first and second trenches . - a stack of at least one first and one second semiconductor layers doped according to different types of conductivity, each one of the diodes comprising a portion of the first layer superimposed on a portion of the second layer ; - first trenches passing through the entire thickness of the second layer and at least one part of the thickness of the first layer and surrounding at least one region of the stack wherein several diodes are formed; - dielectric portions arranged in the first trenches and covering the lateral flanks of said region of the stack over the entire thickness of the second layer and a first part of the thickness of the first layer ; - first electrically conductive portions arranged in the first trenches , covering the lateral flanks of said region of the stack over a second part of the thickness of the first layer not covered by the dielectric portions and/or covering bottom walls of the first trenches , and forming at least one part of the first electrodes of the diodes formed in said region of the stack; - at least one second trench partially passing through the thickness of the first layer from a first face of the first layer opposite a second face of the first layer facing the second layer , and separating the portions of the first layer from the diodes formed in said region of the stack without passing through the interface between the first and second layers; - several second electrodes electrically insulated from one another and each one electrically connected to one of the portions of the second layer of the diodes formed in said region of the stack; <EOS>