A semiconductor structure, comprising: a substrate ; a first electrode disposed in the substrate ; a storage structure formed on the first electrode , wherein the storage structure comprises a magnetic stacked layer structure; a first shielding layer formed on the substrate , wherein the first electrode penetrates the first shielding layer ; a first dielectric layer formed on the first shielding layer , wherein the first electrode is disposed in the first dielectric layer , and a top surface of the first electrode is flush with a top surface of the first dielectric layer ; a second dielectric layer formed on the first dielectric layer and covering a top surface and sidewalls of the magnetic stacked layer structure, wherein the first dielectric layer and the second dielectric layer together constitute an isolation layer ; and a second electrode penetrating the shielding layer at the top surface of the magnetic stacked layer structure and electrically connects to the storage structure ; characterized in that the semiconductor structure further comprises: a second shielding layer formed on the first shielding layer and formed on an outer surface of the isolation layer , wherein the first shielding layer and the second shielding layer together constitute a shielding layer covering the top surface and the sidewalls of the magnetic stacked layer structure, and a bottom surface of the shielding layer is lower than a bottom surface of the storage structure , and wherein a material of the first shielding layer is different from a material of the second shielding layer and the material of the first shielding layer and the material of the second shielding layer each comprises a conductive material or a magnetically permeable material. a substrate ; a first electrode disposed in the substrate ; a storage structure formed on the first electrode , wherein the storage structure comprises a magnetic stacked layer structure; a first shielding layer formed on the substrate , wherein the first electrode penetrates the first shielding layer ; a first dielectric layer formed on the first shielding layer , wherein the first electrode is disposed in the first dielectric layer , and a top surface of the first electrode is flush with a top surface of the first dielectric layer ; a second dielectric layer formed on the first dielectric layer and covering a top surface and sidewalls of the magnetic stacked layer structure, wherein the first dielectric layer and the second dielectric layer together constitute an isolation layer ; and a second electrode penetrating the shielding layer at the top surface of the magnetic stacked layer structure and electrically connects to the storage structure ; characterized in that the semiconductor structure further comprises: a second shielding layer formed on the first shielding layer and formed on an outer surface of the isolation layer , wherein the first shielding layer and the second shielding layer together constitute a shielding layer covering the top surface and the sidewalls of the magnetic stacked layer structure, and a bottom surface of the shielding layer is lower than a bottom surface of the storage structure , and wherein a material of the first shielding layer is different from a material of the second shielding layer and the material of the first shielding layer and the material of the second shielding layer each comprises a conductive material or a magnetically permeable material. <EOS>