A field effect device , comprising: a semiconductor body having a first surface and a second surface ; a source contact coupled to the semiconductor body proximate the second surface ; a drain contact coupled to the semiconductor body at the first surface and separated from the source; a body contact coupled to the semiconductor body proximate the second surface ; an insulated control gate extending through the semiconductor body from the second surface toward the first surface , not reaching the drain contact and configured to control a conductive channel extending between the source and drain contacts ; a body region of a first conductivity type and having an extension region extending to the body contact ; a first doped region of a second conductivity type and adjacent to the drain contact ; a first drift region of the second conductivity type and which forms a N-P junction with the body region within the semiconductor body , the first drift region having a doping concentration below that of the first doped region ; a second drift region of the second conductivity type, the second drift region separating the body region from the source contact ; a second doped region of the first conductivity type adjacent and connected to the source contact ; a third doped region of the second conductivity type different to the first conductivity type, the second doped region being adjacent and connected to the second doped region and adjacent to the source contact ; and wherein the second drift region isolates the second doped region and the third doped region from a remainder of the semiconductor body . a semiconductor body having a first surface and a second surface ; a source contact coupled to the semiconductor body proximate the second surface ; a drain contact coupled to the semiconductor body at the first surface and separated from the source; a body contact coupled to the semiconductor body proximate the second surface ; an insulated control gate extending through the semiconductor body from the second surface toward the first surface , not reaching the drain contact and configured to control a conductive channel extending between the source and drain contacts ; a body region of a first conductivity type and having an extension region extending to the body contact ; a first doped region of a second conductivity type and adjacent to the drain contact ; a first drift region of the second conductivity type and which forms a N-P junction with the body region within the semiconductor body , the first drift region having a doping concentration below that of the first doped region ; a second drift region of the second conductivity type, the second drift region separating the body region from the source contact ; a second doped region of the first conductivity type adjacent and connected to the source contact ; a third doped region of the second conductivity type different to the first conductivity type, the second doped region being adjacent and connected to the second doped region and adjacent to the source contact ; and wherein the second drift region isolates the second doped region and the third doped region from a remainder of the semiconductor body . <EOS>