An imaging device , comprising: a substrate , on which a pixel array including a plurality of unit pixels is arranged, each of the unit pixels includes: a first opto-electronic converter having a first area formed in the substrate ; a second opto-electronic converter having a sensitivity lower than a sensitivity of the first opto-electronic converter and having a second area formed in the substrate , wherein the first area is larger than the second area; a trench extending from a first surface of the substrate , wherein at least a portion of the trench is between the first opto-electronic converter and the second opto-electronic converter , and wherein a light blocking wall is formed in the trench and includes an insulating film extending from the first surface of the substrate ; or includes at least one of a negative fixed charge film, an oxide film, and a metal; and a light-blocking film (203; 251), wherein the light-blocking film (203; 251) is formed over at least a portion of the second area of the second opto-electronic converter , wherein the light-blocking film (203; 251) absorbs a portion of light incident on the imaging device , and wherein the light-blocking film includes a slit, wherein the directions in which the slits in the plurality of the unit pixels are formed on the light-blocking films formed on the adjacent second opto-electronic converters of adjacent pixels are different. a substrate , on which a pixel array including a plurality of unit pixels is arranged, each of the unit pixels includes: a first opto-electronic converter having a first area formed in the substrate ; a second opto-electronic converter having a sensitivity lower than a sensitivity of the first opto-electronic converter and having a second area formed in the substrate , wherein the first area is larger than the second area; a trench extending from a first surface of the substrate , wherein at least a portion of the trench is between the first opto-electronic converter and the second opto-electronic converter , and wherein a light blocking wall is formed in the trench and includes an insulating film extending from the first surface of the substrate ; or includes at least one of a negative fixed charge film, an oxide film, and a metal; and a first opto-electronic converter having a first area formed in the substrate ; a second opto-electronic converter having a sensitivity lower than a sensitivity of the first opto-electronic converter and having a second area formed in the substrate , wherein the first area is larger than the second area; a trench extending from a first surface of the substrate , wherein at least a portion of the trench is between the first opto-electronic converter and the second opto-electronic converter , and wherein a light blocking wall is formed in the trench and includes an insulating film extending from the first surface of the substrate ; or includes at least one of a negative fixed charge film, an oxide film, and a metal; and a light-blocking film (203; 251), wherein the light-blocking film (203; 251) is formed over at least a portion of the second area of the second opto-electronic converter , wherein the light-blocking film (203; 251) absorbs a portion of light incident on the imaging device , and wherein the light-blocking film includes a slit, wherein the directions in which the slits in the plurality of the unit pixels are formed on the light-blocking films formed on the adjacent second opto-electronic converters of adjacent pixels are different. <EOS>