A method for producing a device provided with one or several FinFET transistor(s) comprising the following steps: a) making amorphous and doping a first portion of at least one semiconductor structure comprising a fin made from a crystalline semiconductor material and extending over a substrate in the direction of its length in a first direction (Y), the fin having a height measured in a second direction (Z) orthogonal to the first direction, the first direction (Y) and the second direction (Z) being parallel to a longitudinal plane (P1) normal to the primary plane of the substrate, the first portion being made amorphous and doped using at least a first tilted implantation via a beam oriented toward a first lateral face of the fin and along a direction (F1) forming a non-nil angle (-θ1) with the second direction (Z), the direction of the beam being located in a transverse plane (P2), the transverse plane being normal to the primary plane of the support and secant, or advantageously orthogonal, to the longitudinal plane (P1), the first portion made amorphous and doped being arranged against the first lateral face and extending up to a given zone of the fin located between the first lateral face and a second lateral face opposite the first lateral face, a first crystalline semiconductor block being kept against the second lateral face of the fin , then b) carrying out at least one recrystallization annealing of said first portion, then c) making amorphous and doping a second portion of the fin using a beam oriented toward the second lateral face of the fin and along a direction (F2) forming a non-nil angle (+θ2) with the second direction (Z), the second portion made amorphous and doped being arranged against the second lateral face and extending up to a given part of the fin located between the first lateral face and the second lateral face, a second crystalline semiconductor block being kept against the first lateral face of the fin, then d) carrying out at least one recrystallization annealing of the second portion . a) making amorphous and doping a first portion of at least one semiconductor structure comprising a fin made from a crystalline semiconductor material and extending over a substrate in the direction of its length in a first direction (Y), the fin having a height measured in a second direction (Z) orthogonal to the first direction, the first direction (Y) and the second direction (Z) being parallel to a longitudinal plane (P1) normal to the primary plane of the substrate, the first portion being made amorphous and doped using at least a first tilted implantation via a beam oriented toward a first lateral face of the fin and along a direction (F1) forming a non-nil angle (-θ1) with the second direction (Z), the direction of the beam being located in a transverse plane (P2), the transverse plane being normal to the primary plane of the support and secant, or advantageously orthogonal, to the longitudinal plane (P1), the first portion made amorphous and doped being arranged against the first lateral face and extending up to a given zone of the fin located between the first lateral face and a second lateral face opposite the first lateral face, a first crystalline semiconductor block being kept against the second lateral face of the fin , then b) carrying out at least one recrystallization annealing of said first portion, then c) making amorphous and doping a second portion of the fin using a beam oriented toward the second lateral face of the fin and along a direction (F2) forming a non-nil angle (+θ2) with the second direction (Z), the second portion made amorphous and doped being arranged against the second lateral face and extending up to a given part of the fin located between the first lateral face and the second lateral face, a second crystalline semiconductor block being kept against the first lateral face of the fin, then d) carrying out at least one recrystallization annealing of the second portion . <EOS>