A method for producing a solid state solar cell, the method comprising the steps of: providing a hole collector layer; applying a conductive layer onto the hole collector layer; applying an electron blocking layer onto the conductive layer; applying a sensitizer layer in direct contact with and onto the electron blocking layer; coating a hole blocking layer onto the sensitizer layer; and providing a current collector and/or a metal layer or a conductor, which is in direct contact with the hole blocking layer, characterized in that the sensitizer layer having a thickness from 250 nm to 350 nm consists of an organic-inorganic perovskite being provided by one or more methods selected from physical vapor deposition methods group consisting of deposition by sublimation process, cathodic arc deposition, electron beam physical vapor deposition, thermal evaporation, evaporative deposition, pulse laser deposition, sputter deposition or from chemical vapor deposition; in that the electron blocking layer comprises an electron blocking material being selected from aromatic amine derivatives being selected from triphenylamine, carbazole, N,N,(diphenyl)-N',N'di-(alkylphenyl)-4,4'-biphenyldiamine, (pTPDs), diphenylhydrazone, poly [N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (polyTPD), polyTPD substituted by electron donor groups and/or acceptor groups, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine (TFB), 2,2',7,7'-tetrakis-N,N-di-p-methoxyphenylamine-9,9'-spirobifluorene) (spiro-OMeTAD), N,N,N',N'-tetraphenylbenzidine (TPD); and in that said hole blocking layer comprises one hole blocking material being selected from -phenyl-C 61 -butyric acid methyl ester (PCBM), 1,4,5,8,9,11-hexazatriphenylene-hexacarbonitrile (HAT-CN), (C 60 -I h ) fullerene (C60), (C70-D5h) fullerene (C70), -Phenyl C 71 butyric acid methyl ester (PC70BM), and metal oxides. providing a hole collector layer; applying a conductive layer onto the hole collector layer; applying an electron blocking layer onto the conductive layer; applying a sensitizer layer in direct contact with and onto the electron blocking layer; coating a hole blocking layer onto the sensitizer layer; and providing a current collector and/or a metal layer or a conductor, which is in direct contact with the hole blocking layer, characterized in that the sensitizer layer having a thickness from 250 nm to 350 nm consists of an organic-inorganic perovskite being provided by one or more methods selected from physical vapor deposition methods group consisting of deposition by sublimation process, cathodic arc deposition, electron beam physical vapor deposition, thermal evaporation, evaporative deposition, pulse laser deposition, sputter deposition or from chemical vapor deposition; in that the electron blocking layer comprises an electron blocking material being selected from aromatic amine derivatives being selected from triphenylamine, carbazole, N,N,(diphenyl)-N',N'di-(alkylphenyl)-4,4'-biphenyldiamine, (pTPDs), diphenylhydrazone, poly [N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (polyTPD), polyTPD substituted by electron donor groups and/or acceptor groups, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine (TFB), 2,2',7,7'-tetrakis-N,N-di-p-methoxyphenylamine-9,9'-spirobifluorene) (spiro-OMeTAD), N,N,N',N'-tetraphenylbenzidine (TPD); and in that said hole blocking layer comprises one hole blocking material being selected from -phenyl-C 61 -butyric acid methyl ester (PCBM), 1,4,5,8,9,11-hexazatriphenylene-hexacarbonitrile (HAT-CN), (C 60 -I h ) fullerene (C60), (C70-D5h) fullerene (C70), -Phenyl C 71 butyric acid methyl ester (PC70BM), and metal oxides. <EOS>