mhurhangee/patent-ind-claim-en huggingface dataset:
A user equipment, UE, for wireless communication, comprising: a memory; and one or more processors, coupled to the memory, configured to: detect an occurrence of a triggering event associated with power headroom reporting, the triggering event corresponding to one or more uplink component carriers of the UE that are associated with one or more control resource set, CORESET, pool index values, wherein the one or more CORESET pool index values are each associated with a different transmit receive point, TRP; and transmit, from the UE to a base station, a power headroom report, PHR, medium access control, MAC, control element, CE, based at least in part on the occurrence of the triggering event, wherein the PHR MAC-CE is for one or more uplink component carriers of the UE, and wherein a maximum size of the PHR MAC-CE is based at least in part on a number of uplink component carriers that are configured with two CORESET pool index values. a memory; and one or more processors, coupled to the memory, configured to: detect an occurrence of a triggering event associated with power headroom reporting, the triggering event corresponding to one or more uplink component carriers of the UE that are associated with one or more control resource set, CORESET, pool index values, wherein the one or more CORESET pool index values are each associated with a different transmit receive point, TRP; and transmit, from the UE to a base station, a power headroom report, PHR, medium access control, MAC, control element, CE, based at least in part on the occurrence of the triggering event, wherein the PHR MAC-CE is for one or more uplink component carriers of the UE, and wherein a maximum size of the PHR MAC-CE is based at least in part on a number of uplink component carriers that are configured with two CORESET pool index values. detect an occurrence of a triggering event associated with power headroom reporting, the triggering event corresponding to one or more uplink component carriers of the UE that are associated with one or more control resource set, CORESET, pool index values, wherein the one or more CORESET pool index values are each associated with a different transmit receive point, TRP; and transmit, from the UE to a base station, a power headroom report, PHR, medium access control, MAC, control element, CE, based at least in part on the occurrence of the triggering event, wherein the PHR MAC-CE is for one or more uplink component carriers of the UE, and wherein a maximum size of the PHR MAC-CE is based at least in part on a number of uplink component carriers that are configured with two CORESET pool index values.
An image processing method, applied in an electronic device, wherein the electronic device comprises an imaging apparatus comprising an image sensor , the image sensor comprises an array of photosensitive pixel units and an array of filter units arranged on the array of photosensitive pixel units, each filter unit corresponds to one photosensitive pixel unit and covers four adjacent photosensitive elements , each photosensitive element is coupled to a transmission tube , two adjacent photosensitive elements collectively use one source follower and one analog-digital converter , the four adjacent photosensitive elements collectively use one adder , and each photosensitive pixel unit comprises a plurality of photosensitive pixels , the image processing method comprises: outputting a merged image by the image sensor, wherein, the merged image comprises an array of merged pixels, and the photosensitive pixels in a same photosensitive pixel unit are collectively output as one merged pixel; acquiring a brightness of the merged image; determining whether the brightness is less than or equal to a preset threshold; when the brightness is less than or equal to the preset threshold, converting the merged image into a merged true-color image; and when the brightness is greater than the preset threshold, outputting a color-block image by the image sensor, wherein, the color-block image comprises image pixel units arranged in a Bayer array, each image pixel unit comprises a plurality of original pixels with a same color, each photosensitive pixel unit corresponds to one image pixel unit, and each photosensitive pixel corresponds to one original pixel; converting the color-block image into a simulation image using a first interpolation algorithm, wherein, the simulation image comprises simulation pixels arranged in a Bayer array, and each photosensitive pixel corresponds to one simulation pixel; and converting the simulation image into a simulation true-color image. outputting a merged image by the image sensor, wherein, the merged image comprises an array of merged pixels, and the photosensitive pixels in a same photosensitive pixel unit are collectively output as one merged pixel; acquiring a brightness of the merged image; determining whether the brightness is less than or equal to a preset threshold; when the brightness is less than or equal to the preset threshold, converting the merged image into a merged true-color image; and when the brightness is greater than the preset threshold, outputting a color-block image by the image sensor, wherein, the color-block image comprises image pixel units arranged in a Bayer array, each image pixel unit comprises a plurality of original pixels with a same color, each photosensitive pixel unit corresponds to one image pixel unit, and each photosensitive pixel corresponds to one original pixel; converting the color-block image into a simulation image using a first interpolation algorithm, wherein, the simulation image comprises simulation pixels arranged in a Bayer array, and each photosensitive pixel corresponds to one simulation pixel; and converting the simulation image into a simulation true-color image.
A self-cleaning needleless connector , comprising: a connector body defining a fluid passageway including an inlet and an outlet ; a cover disposed over at least the inlet of the connector body ; an access point disposed at an inlet end of the cover and adapted to move together with the cover between a first position and a second position and wherein in the first position the inlet is within the cover , and wherein in the second position the inlet is extended beyond the cover and is adapted to receive a male luer lock connector; a reservoir containing a cleaning agent; characterized in that the cover is rotatable about an axis of rotation that is generally aligned with the connector body and includes an abrasive surface disposed within the cover , the abrasive surface being in fluid communication with the cleaning agent and being adapted to contact an exterior surface of the inlet including a plurality of threads as the cover moves from the extended position to the retracted position. a connector body defining a fluid passageway including an inlet and an outlet ; a cover disposed over at least the inlet of the connector body ; an access point disposed at an inlet end of the cover and adapted to move together with the cover between a first position and a second position and wherein in the first position the inlet is within the cover , and wherein in the second position the inlet is extended beyond the cover and is adapted to receive a male luer lock connector; wherein in the first position the inlet is within the cover , and wherein in the second position the inlet is extended beyond the cover and is adapted to receive a male luer lock connector; a reservoir containing a cleaning agent;
An isolated antibody polypeptide that is a fusion polypeptide comprising a first variable domain and an Fc domain, wherein the first variable domain specifically binds human CD40L, wherein CD40L comprises the amino acid sequence of SEQ ID NO: 1, wherein the first variable domain comprises BMS2h-572-633 having the amino acid sequence of SEQ ID NO: 274, and wherein the Fc domain is an IgG1 Fc domain selected from a CT-Long domain consisting of amino acids 139 to 370 of SEQ ID NO: 1362, a CT-short domain consisting of amino acids 138 to 362 of SEQ ID NO: 1363, an N297Q Long Fc domain consisting of amino acids 139 to 370 of SEQ ID NO: 1364, or an N297Q Short Fc domain consisting of amino acids 138 to 362 of SEQ ID NO: 1365.
A method for manufacturing a microelectromechanical resonator, wherein the microelectromechanical resonator is a flexural mode resonator and comprises a deforming element with an elongate body that extends along a spring axis Z, the dimension of the elongate body along the spring axis being at least three times the dimensions of the elongate body in a direction traverse to the spring axis , and the method comprises: providing a semiconductor wafer of silicon crystal material that has a nominal n-type doping concentration, such that a surface of the semiconductor wafer is aligned with a plane of the silicon crystal; forming the deforming element out of the semiconductor wafer such that the spring axis of the elongate body of the deforming element is aligned with the plane of the silicon crystal and a crystal orientation angle is formed between the spring axis of the deforming element and a <100> crystal axis of the silicon crystal lattice ; characterized in that for the flexural mode vibrations in a selected design temperature range of -40...+85 degrees Celsius, the crystal orientation angle and the nominal n-type doping concentration of the semiconductor wafer in units of 1.10 19 cm -3 are in a range defined by equation: C > k 1 ∗ Θ 3 + k 2 ∗ Θ 2 + k 3 ∗ Θ + k 4 , and Θ≥13 deg where Θ is the crystal orientation angle C is the nominal n-type doping concentration k1= 0.0027 deg -3 cm -3 k2=-0.0886 deg -2 cm -3 k3= 1.1667 deg -1 cm -3 k4=-2.2624 cm -3 . providing a semiconductor wafer of silicon crystal material that has a nominal n-type doping concentration, such that a surface of the semiconductor wafer is aligned with a plane of the silicon crystal; forming the deforming element out of the semiconductor wafer such that the spring axis of the elongate body of the deforming element is aligned with the plane of the silicon crystal and a crystal orientation angle is formed between the spring axis of the deforming element and a <100> crystal axis of the silicon crystal lattice ; characterized in that for the flexural mode vibrations in a selected design temperature range of -40...+85 degrees Celsius, the crystal orientation angle and the nominal n-type doping concentration of the semiconductor wafer in units of 1.10 19 cm -3 are in a range defined by equation: C > k 1 ∗ Θ 3 + k 2 ∗ Θ 2 + k 3 ∗ Θ + k 4 , and Θ≥13 deg where Θ is the crystal orientation angle C is the nominal n-type doping concentration k1= 0.0027 deg -3 cm -3 k2=-0.0886 deg -2 cm -3 k3= 1.1667 deg -1 cm -3 k4=-2.2624 cm -3 . where Θ is the crystal orientation angle C is the nominal n-type doping concentration k1= 0.0027 deg -3 cm -3 k2=-0.0886 deg -2 cm -3 k3= 1.1667 deg -1 cm -3 k4=-2.2624 cm -3 .
A device comprising a light projector configured to provide flood illumination and active depth sensing, the light projector comprising: a light source configured to emit a light along a first direction; and a diffractive element positioned in a path of the emitted light along the first direction, the diffractive element comprising: a diffractive optical element having a first refractive index, the diffractive optical element configured to project a distribution of focused light from the emitted light during a first mode of the light projector; and a diffusion element having a second refractive index, the diffusion element configured to diffuse the emitted light during a second mode of the light projector; the device further comprising: a refractive material located between the diffractive optical element and the diffusion element, wherein a third refractive index of the refractive material is adjustable between: for the first mode, the second refractive index; and for the second mode, a refractive index different from the second refractive index; a receiver configured to receive reflections of light projected by the light projector; and one or more processors configured to determine one or more depths from the received reflections when the light projector is operating in the first mode, wherein, in the first mode, a light projection from the diffractive element is the distribution of focused light from the diffractive optical element. a light source configured to emit a light along a first direction; and a diffractive element positioned in a path of the emitted light along the first direction, the diffractive element comprising: a diffractive optical element having a first refractive index, the diffractive optical element configured to project a distribution of focused light from the emitted light during a first mode of the light projector; and a diffusion element having a second refractive index, the diffusion element configured to diffuse the emitted light during a second mode of the light projector; a refractive material located between the diffractive optical element and the diffusion element, wherein a third refractive index of the refractive material is adjustable between: for the first mode, the second refractive index; and for the second mode, a refractive index different from the second refractive index; for the first mode, the second refractive index; and for the second mode, a refractive index different from the second refractive index; a receiver configured to receive reflections of light projected by the light projector; and one or more processors configured to determine one or more depths from the received reflections when the light projector is operating in the first mode, wherein, in the first mode, a light projection from the diffractive element is the distribution of focused light from the diffractive optical element.
A mobile mineral material processing station comprising: a mobile platform ; a frame supported by or formed by the mobile platform ; supported by the frame in line: a screen ; and an exit conveyor ; and at least one actuator configured to tilt the screen in a first rotational direction; characterized in that the mobile mineral material processing station further comprises: a tilting mechanism configured to tilt the exit conveyor , synchronized with the screen , in a second rotational direction opposite to the first rotational direction when the actuator tilts the screen in the first rotational direction. a mobile platform ; a frame supported by or formed by the mobile platform ; supported by the frame in line: a screen ; and an exit conveyor ; and at least one actuator configured to tilt the screen in a first rotational direction; characterized in that the mobile mineral material processing station further comprises: a tilting mechanism configured to tilt the exit conveyor , synchronized with the screen , in a second rotational direction opposite to the first rotational direction when the actuator tilts the screen in the first rotational direction.
Copolymer of ethylene and an C3 to C10 alpha-olefin, wherein the copolymer has a density of 850 to 920 kg/m 3 measured according to ISO 1183, characterized by a Full Width at Half maximum (FWHM) of the crystallization peak measured according to ISO 11357-3 following the equation (I): FWHM ° C < − 0.002104167 ⋅ d 2 + 3.749833 ⋅ d − 1666.36 wherein d is the density of the copolymer in kg/m 3 , characterized in that the copolymer has a MFR2 of 0.1 to 45 g/10min, measured according to ISO 1133. wherein d is the density of the copolymer in kg/m 3 , characterized in that the copolymer has a MFR2 of 0.1 to 45 g/10min, measured according to ISO 1133.
An electrodialysis unit comprising at least two electrodialysis stacks ED1 and ED2 connected in series, wherein: (a) stacks ED1 and ED2 comprise anion exchange membranes and cation exchange membranes; (b) the anion exchange membranes in stack ED1 have a lower electrical resistance than the anion exchange membranes in stack ED2 and the cation exchange membranes in stack ED1 have a lower electrical resistance than the cation exchange membranes in stack ED2; (c) the water-permeability of the cation exchange membranes in stack ED2 is 2 to 20 times lower than the water-permeability of the cation exchange membranes in stack ED1; (d) the water-permeability of the anion exchange membranes in stack ED2 is 2 to 20 times lower than the water-permeability of the anion exchange membranes in stack ED1; and (e) stack ED2 is located downstream of stack ED1; wherein the electrodialysis unit is configured such that diluate exiting stack ED1 is fed into stack ED2 in order to further lower the concentration of ions dissolved therein. (a) stacks ED1 and ED2 comprise anion exchange membranes and cation exchange membranes; (b) the anion exchange membranes in stack ED1 have a lower electrical resistance than the anion exchange membranes in stack ED2 and the cation exchange membranes in stack ED1 have a lower electrical resistance than the cation exchange membranes in stack ED2; (c) the water-permeability of the cation exchange membranes in stack ED2 is 2 to 20 times lower than the water-permeability of the cation exchange membranes in stack ED1; (d) the water-permeability of the anion exchange membranes in stack ED2 is 2 to 20 times lower than the water-permeability of the anion exchange membranes in stack ED1; and (e) stack ED2 is located downstream of stack ED1; wherein the electrodialysis unit is configured such that diluate exiting stack ED1 is fed into stack ED2 in order to further lower the concentration of ions dissolved therein.
A method for forming piezoelectric transducers for inkjet printheads, comprising: forming at least one piezoelectric layer on a first transfer carrier substrate wherein the piezoelectric layer is optionally bonded to the substrate via an adhesive; forming a plurality of patterned top electrodes by jetting droplets of conductive material on an exposed surface of the at least one piezoelectric layer ; dicing the at least one piezoelectric layer to form a plurality of individual piezoelectric elements , after forming the plurality of patterned top electrodes , wherein a hold-back zone is formed by surface portions of the piezoelectric elements on which conductive material is not deposited; attaching a second substrate to the plurality of patterned top electrodes via a second adhesive layer and removing the first transfer carrier substrate thereby exposing a released surface of the individual piezoelectric elements ; forming a plurality of patterned bottom electrodes by jetting droplets of conductive material onto the released surface of each of the individual piezoelectric elements . forming at least one piezoelectric layer on a first transfer carrier substrate wherein the piezoelectric layer is optionally bonded to the substrate via an adhesive; forming a plurality of patterned top electrodes by jetting droplets of conductive material on an exposed surface of the at least one piezoelectric layer ; dicing the at least one piezoelectric layer to form a plurality of individual piezoelectric elements , after forming the plurality of patterned top electrodes , wherein a hold-back zone is formed by surface portions of the piezoelectric elements on which conductive material is not deposited; attaching a second substrate to the plurality of patterned top electrodes via a second adhesive layer and removing the first transfer carrier substrate thereby exposing a released surface of the individual piezoelectric elements ; forming a plurality of patterned bottom electrodes by jetting droplets of conductive material onto the released surface of each of the individual piezoelectric elements .
An Fe-based, nanocrystalline alloy powder, characterized in that said Fe-based, nanocrystalline alloy powder has an alloy composition represented by Fe 100-a-b-c-d-e-f Cu a Si b B c Cr d Sn e C f , wherein a, b, c, d, e and f are atomic % meeting 0.80 ≤ a ≤ 1.80, 2.00 ≤ b ≤ 10.00, 11.00 ≤ c ≤ 17.00, 0.10 ≤ d ≤ 2.00, 0.30 ≤ e ≤ 1.50, and 0.10 ≤ f ≤ 0.40; and has a nanocrystalline structure comprising nanocrystalline phases and an amorphous phase, containing 20% or more by volume of the nanocrystalline phases having an average crystal grain size, D, of 10-50 nm, in that the formation of Fe 2 B crystals in the Fe-based, nanocrystalline alloy powder is suppressed, in that the Fe-based, nanocrystalline alloy powder is obtained by heat-treating a quenched alloy powder, the quenched alloy powder having a trace amount of the fine Fe2B crystal, having an average crystal grain size of less than 10 nm and exhibiting in an X-ray diffraction measurement a diffraction peak intensity of a plane or a synthesized diffraction peak intensity of and planes of Fe 2 B are both 15% or less per 100% of the diffraction peak intensity of a plane of the nanocrystalline phases, in that the average crystal grain size, D, of the nanocrystalline phases is obtained by determining a half width in radian of (Fe-Si) bcc peak in the X-ray diffraction pattern of the Fe-based, nanocrystalline alloy powder, and calculating Scherrer's equation of D = 0.9 × λ/(half width) × cosΘ, wherein λ is the wavelength of the X-ray source, and in that the volume fraction of the nanocrystalline phases is determined by observing the alloy structure by a transmission electron microscope, summing the areas of the nanocrystalline phases, and calculating its ratio to the area of the observed field. the formation of Fe 2 B crystals in the Fe-based, nanocrystalline alloy powder is suppressed, in that the Fe-based, nanocrystalline alloy powder is obtained by heat-treating a quenched alloy powder, the quenched alloy powder having a trace amount of the fine Fe2B crystal, having an average crystal grain size of less than 10 nm and exhibiting in an X-ray diffraction measurement a diffraction peak intensity of a plane or a synthesized diffraction peak intensity of and planes of Fe 2 B are both 15% or less per 100% of the diffraction peak intensity of a plane of the nanocrystalline phases, in that the average crystal grain size, D, of the nanocrystalline phases is obtained by determining a half width in radian of (Fe-Si) bcc peak in the X-ray diffraction pattern of the Fe-based, nanocrystalline alloy powder, and calculating Scherrer's equation of D = 0.9 × λ/(half width) × cosΘ, wherein λ is the wavelength of the X-ray source, and in that the volume fraction of the nanocrystalline phases is determined by observing the alloy structure by a transmission electron microscope, summing the areas of the nanocrystalline phases, and calculating its ratio to the area of the observed field.