A method of manufacturing a light emitting element , the method comprising: preparing a lower panel comprising a substrate and a first sub semiconductor layer on the substrate; forming a first mask layer comprising at least one mask pattern on at least a part of the lower panel , the at least one mask pattern having portions which are arranged so as to be spaced apart from each other, and an opening region between said portions of the mask pattern that are spaced apart from each other; forming an element laminate on the first mask layer comprising laminating a first conductive semiconductor layer , an active material layer , and a second conductive semiconductor layer on the first mask layer to form an element laminate ; forming a plurality of an element rod by etching the element laminate in a vertical direction to form an element rod on the lower panel and forming an insulating film on a side surface of the element rod ; and removing the mask pattern to separate the element rod from the lower panel , wherein the removing comprises dissolving the mask pattern , wherein: the plurality of an element rod includes a first element rod formed on the mask pattern and a second element rod formed on the opening region ; and at the removing the mask pattern , the first element rods are separated from the lower panel , wherein the forming a plurality of an element rod comprises: forming a second mask layer on the element laminate , the second mask layer including a hard mask layer and a pattern layer in which at least one pattern is spaced apart from each other on the hard mask layer; vertically etching a region in which the patterns are spaced apart from each other to form a hole; and removing the second mask layer . preparing a lower panel comprising a substrate and a first sub semiconductor layer on the substrate; forming a first mask layer comprising at least one mask pattern on at least a part of the lower panel , the at least one mask pattern having portions which are arranged so as to be spaced apart from each other, and an opening region between said portions of the mask pattern that are spaced apart from each other; forming an element laminate on the first mask layer comprising laminating a first conductive semiconductor layer , an active material layer , and a second conductive semiconductor layer on the first mask layer to form an element laminate ; forming a plurality of an element rod by etching the element laminate in a vertical direction to form an element rod on the lower panel and forming an insulating film on a side surface of the element rod ; and removing the mask pattern to separate the element rod from the lower panel , wherein the removing comprises dissolving the mask pattern , the plurality of an element rod includes a first element rod formed on the mask pattern and a second element rod formed on the opening region ; and at the removing the mask pattern , the first element rods are separated from the lower panel , forming a second mask layer on the element laminate , the second mask layer including a hard mask layer and a pattern layer in which at least one pattern is spaced apart from each other on the hard mask layer; vertically etching a region in which the patterns are spaced apart from each other to form a hole; and removing the second mask layer . <EOS>