A semiconductor device comprising: a first electrode; a second electrode apart from the first electrode; and a phase change layer between the first electrode and the second electrode, the phase change layer including a quasicrystalline material, the quasicrystalline material comprising: a polyhedral quasicrystalline element, the polyhedral quasicrystalline element having one or more of a 2-fold axis of symmetry, a 3-fold axis of symmetry, a 5-fold axis of symmetry, or a higher-fold axes of symmetry, the higher-fold axis of symmetry being greater than the 5-fold axis of symmetry, wherein the polyhedral quasicrystalline element having one of pentagonal, octagonal, decagonal, dodecagonal, icohsahedral, and triacontahedral polyhedron, the quasicrystalline material being capable of a phase change between a quasicrystalline phase and an approximant crystalline phase, the approximant crystalline phase having a further regular atom arrangement than an atom arrangement of the quasicrystalline phase, and the atom arrangement of the quasicrystalline phase being arranged quasiperiodically; characterised in that the phase of the phase change layer is configured to change between the quasicrystalline phase and the approximant crystalline phase in response to an electric signal applied to the phase change layer through the first electrode and second electrode. a first electrode; a second electrode apart from the first electrode; and a phase change layer between the first electrode and the second electrode, the phase change layer including a quasicrystalline material, the quasicrystalline material comprising: a polyhedral quasicrystalline element, the polyhedral quasicrystalline element having one or more of a 2-fold axis of symmetry, a 3-fold axis of symmetry, a 5-fold axis of symmetry, or a higher-fold axes of symmetry, the higher-fold axis of symmetry being greater than the 5-fold axis of symmetry, wherein the polyhedral quasicrystalline element having one of pentagonal, octagonal, decagonal, dodecagonal, icohsahedral, and triacontahedral polyhedron, the quasicrystalline material being capable of a phase change between a quasicrystalline phase and an approximant crystalline phase, the approximant crystalline phase having a further regular atom arrangement than an atom arrangement of the quasicrystalline phase, and the atom arrangement of the quasicrystalline phase being arranged quasiperiodically; characterised in that the phase of the phase change layer is configured to change between the quasicrystalline phase and the approximant crystalline phase in response to an electric signal applied to the phase change layer through the first electrode and second electrode. a polyhedral quasicrystalline element, the polyhedral quasicrystalline element having one or more of a 2-fold axis of symmetry, a 3-fold axis of symmetry, a 5-fold axis of symmetry, or a higher-fold axes of symmetry, the higher-fold axis of symmetry being greater than the 5-fold axis of symmetry, wherein the polyhedral quasicrystalline element having one of pentagonal, octagonal, decagonal, dodecagonal, icohsahedral, and triacontahedral polyhedron, the quasicrystalline material being capable of a phase change between a quasicrystalline phase and an approximant crystalline phase, the approximant crystalline phase having a further regular atom arrangement than an atom arrangement of the quasicrystalline phase, and the atom arrangement of the quasicrystalline phase being arranged quasiperiodically; characterised in that the phase of the phase change layer is configured to change between the quasicrystalline phase and the approximant crystalline phase in response to an electric signal applied to the phase change layer through the first electrode and second electrode. <EOS>