Process for fabricating at least one semiconductor structure separated from a support substrate , comprising the following steps: i) producing, starting from a support substrate , a nucleation layer formed of a two-dimensional material comprising at least three monolayers, including at least one interlayer monolayer, each monolayer being formed of a two-dimensional crystal lattice; ii) producing, by epitaxy starting from the nucleation layer , at least one semiconductor structure , ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface , ∘ an upper face of the support substrate , on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer , so that the free surface has an upper face and a lateral edge ; iii) obtaining a conductive surface of a first electrode , located in said lateral zone and different from said free surface ; iv) placing the structure thus obtained in an aqueous electrolytic bath , in which is placed a second electrode , the aqueous electrolyte then coming into contact, in the lateral zone , with the free surface of the nucleation layer and with the conductive surface of the first electrode ; v) applying a potential difference between said electrodes , suitable for causing the formation of hydroxyl radicals at the interface between the conductive surface and the aqueous electrolyte , which then react with the upper face and the lateral edge of the free surface of the nucleation layer , then degrading at least one interlayer monolayer of the nucleation layer until the separation of the semiconductor structure relative to the support substrate is brought about. i) producing, starting from a support substrate , a nucleation layer formed of a two-dimensional material comprising at least three monolayers, including at least one interlayer monolayer, each monolayer being formed of a two-dimensional crystal lattice; ii) producing, by epitaxy starting from the nucleation layer , at least one semiconductor structure , ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface , ∘ an upper face of the support substrate , on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer , so that the free surface has an upper face and a lateral edge ; ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface , ∘ an upper face of the support substrate , on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer , so that the free surface has an upper face and a lateral edge ; iii) obtaining a conductive surface of a first electrode , located in said lateral zone and different from said free surface ; iv) placing the structure thus obtained in an aqueous electrolytic bath , in which is placed a second electrode , the aqueous electrolyte then coming into contact, in the lateral zone , with the free surface of the nucleation layer and with the conductive surface of the first electrode ; v) applying a potential difference between said electrodes , suitable for causing the formation of hydroxyl radicals at the interface between the conductive surface and the aqueous electrolyte , which then react with the upper face and the lateral edge of the free surface of the nucleation layer , then degrading at least one interlayer monolayer of the nucleation layer until the separation of the semiconductor structure relative to the support substrate is brought about. <EOS>