A pixel structure , comprising: a pixel electrode , a gate line and a data line ; a first thin film transistor comprising a gate electrode , a first electrode and a second electrode ; a second thin film transistor comprising a gate electrode , a first electrode and a second electrode ; wherein the gate electrode of the first thin film transistor is electrically connected with the gate line , the first electrode of the first thin film transistor is electrically connected with the data line ; the gate electrode of the second thin film transistor is electrically connected with the first electrode of the second thin film transistor , the first electrode of the second thin film transistor is electrically connected with the pixel electrode , and the second electrode of the second thin film transistor is electrically connected with the second electrode of the first thin film transistor ; the pixel structure is characterized in that : an amount of the first thin film transistor is 1, and an amount of the second thin film transistors is more than 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistor connected with a respective one of the first thin film transistors is 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistors connected with a respective one of the first thin film transistors is more than 1; and reverse breakdown voltages of at least two of the plurality of second thin film transistors are different from each other. a pixel electrode , a gate line and a data line ; a first thin film transistor comprising a gate electrode , a first electrode and a second electrode ; a second thin film transistor comprising a gate electrode , a first electrode and a second electrode ; wherein the gate electrode of the first thin film transistor is electrically connected with the gate line , the first electrode of the first thin film transistor is electrically connected with the data line ; the gate electrode of the second thin film transistor is electrically connected with the first electrode of the second thin film transistor , the first electrode of the second thin film transistor is electrically connected with the pixel electrode , and the second electrode of the second thin film transistor is electrically connected with the second electrode of the first thin film transistor ; the pixel structure is characterized in that : an amount of the first thin film transistor is 1, and an amount of the second thin film transistors is more than 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistor connected with a respective one of the first thin film transistors is 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistors connected with a respective one of the first thin film transistors is more than 1; and reverse breakdown voltages of at least two of the plurality of second thin film transistors are different from each other. an amount of the first thin film transistor is 1, and an amount of the second thin film transistors is more than 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistor connected with a respective one of the first thin film transistors is 1; or, the amount of the first thin film transistors is more than 1, and the amount of the second thin film transistors connected with a respective one of the first thin film transistors is more than 1; and reverse breakdown voltages of at least two of the plurality of second thin film transistors are different from each other. <EOS>