Method for producing solid-state layers , in particular for use as wafers, having the following steps: providing at least one workpiece for detaching the solid-state layers , wherein the workpiece has at least one exposed surface, generating and/or providing a carrier unit for receiving at least one solid-state layer , wherein the carrier unit has at least one receiving layer for holding the solid-state layer , a detachment layer being superimposed at least in certain portions on said receiving layer, connecting the receiving layer at least in certain portions to the exposed surface of the workpiece , to form a composite structure, wherein the detachment layer surrounds the workpiece at least in certain portions in a peripheral direction and wherein the receiving layer and the detachment layer are in contact with one another, subjecting the composite structure to an internal and/or external stress field in such a way that the solid-state layer is detached from the workpiece along a plane extending within the workpiece , by crack propagation , wherein the crack initially propagates in the region of the detachment layer and is introduced into the workpiece by means of the detachment layer , characterized in that , when the composite structure is subjected to the stress field, the crack for detachment of the solid-state layer initially propagates within the detachment layer in such a way that a part of the detachment layer is separated off, wherein, in the peripheral direction of the workpiece , the detachment layer is configured in such a way, in particular at a distance of less than 10 mm, preferably of less than 5 mm, and particularly preferably of less than 2 mm, from the workpiece , that the crack profile in the detachment layer and in the workpiece lies in the same plane. providing at least one workpiece for detaching the solid-state layers , wherein the workpiece has at least one exposed surface, generating and/or providing a carrier unit for receiving at least one solid-state layer , wherein the carrier unit has at least one receiving layer for holding the solid-state layer , a detachment layer being superimposed at least in certain portions on said receiving layer, connecting the receiving layer at least in certain portions to the exposed surface of the workpiece , to form a composite structure, wherein the detachment layer surrounds the workpiece at least in certain portions in a peripheral direction and wherein the receiving layer and the detachment layer are in contact with one another, subjecting the composite structure to an internal and/or external stress field in such a way that the solid-state layer is detached from the workpiece along a plane extending within the workpiece , by crack propagation , wherein the crack initially propagates in the region of the detachment layer and is introduced into the workpiece by means of the detachment layer , characterized in that , when the composite structure is subjected to the stress field, the crack for detachment of the solid-state layer initially propagates within the detachment layer in such a way that a part of the detachment layer is separated off, wherein, in the peripheral direction of the workpiece , the detachment layer is configured in such a way, in particular at a distance of less than 10 mm, preferably of less than 5 mm, and particularly preferably of less than 2 mm, from the workpiece , that the crack profile in the detachment layer and in the workpiece lies in the same plane. <EOS>