An integrated circuit (IC) including a lateral junction diode device , comprising: a substrate having at least a semiconductor surface layer doped a first type; the lateral junction diode device including: a depletion-mode laterally diffused MOSFET (LDMOS device) in the semiconductor surface layer including a source doped a second type, a drain doped the second type and a gate above a gate dielectric on the semiconductor surface layer, a channel region doped the second type under the gate on the gate dielectric and a drift region (138/136) doped the second type between the channel region and the drain, wherein the drain also provides a high voltage (HV) cathode for the lateral junction diode device; and an embedded diode including a second cathode and an anode shared with the lateral junction diode device in the semiconductor surface layer, wherein the embedded diode is junction isolated by an isolation region (123/124 to 105) located between the anode and the source; wherein the anode and the isolation region are directly connected to the gate, and wherein the second cathode is directly connected to the source; and wherein the isolation region is directly connected to the gate and the second cathode is directly connected to the source both by a metal layer (M2). a substrate having at least a semiconductor surface layer doped a first type; the lateral junction diode device including: a depletion-mode laterally diffused MOSFET (LDMOS device) in the semiconductor surface layer including a source doped a second type, a drain doped the second type and a gate above a gate dielectric on the semiconductor surface layer, a channel region doped the second type under the gate on the gate dielectric and a drift region (138/136) doped the second type between the channel region and the drain, wherein the drain also provides a high voltage (HV) cathode for the lateral junction diode device; and an embedded diode including a second cathode and an anode shared with the lateral junction diode device in the semiconductor surface layer, wherein the embedded diode is junction isolated by an isolation region (123/124 to 105) located between the anode and the source; wherein the anode and the isolation region are directly connected to the gate, and wherein the second cathode is directly connected to the source; and wherein the isolation region is directly connected to the gate and the second cathode is directly connected to the source both by a metal layer (M2). a depletion-mode laterally diffused MOSFET (LDMOS device) in the semiconductor surface layer including a source doped a second type, a drain doped the second type and a gate above a gate dielectric on the semiconductor surface layer, a channel region doped the second type under the gate on the gate dielectric and a drift region (138/136) doped the second type between the channel region and the drain, wherein the drain also provides a high voltage (HV) cathode for the lateral junction diode device; and an embedded diode including a second cathode and an anode shared with the lateral junction diode device in the semiconductor surface layer, wherein the embedded diode is junction isolated by an isolation region (123/124 to 105) located between the anode and the source; wherein the anode and the isolation region are directly connected to the gate, and wherein the second cathode is directly connected to the source; and wherein the isolation region is directly connected to the gate and the second cathode is directly connected to the source both by a metal layer (M2). <EOS>