A method of programming a memory, comprising: programming memory cells of the memory selected to be programmed to a particular target data state of a plurality of target data states of the memory; and using program disturb to program memory cells of the memory selected to be programmed to respective target data states of a subset of target data states of the plurality of target data states that are lower than the particular target data state while programming the memory cells of the memory selected to be programmed to the particular target data state; and boosting channel voltage levels for the memory cells of the memory selected to be programmed to the subset of target data states that are lower than the particular target data state; wherein boosting the channel voltage levels comprises: applying a multi-step pass signal to access lines of the memory prior to programming the memory cells of the memory selected to be programmed to the particular target data state; and for each memory cell of the memory cells of the memory selected to be programmed to the subset of target data states, increasing a voltage level of a data line selectively connected to that memory cell to an inhibit voltage prior to a respective step of the multi-step pass signal corresponding to its respective target data state, wherein the step corresponding to any target data state of the plurality of target data states is a different step of the multi-step pass signal than the step corresponding to each remaining target data state of the plurality of target data states. programming memory cells of the memory selected to be programmed to a particular target data state of a plurality of target data states of the memory; and using program disturb to program memory cells of the memory selected to be programmed to respective target data states of a subset of target data states of the plurality of target data states that are lower than the particular target data state while programming the memory cells of the memory selected to be programmed to the particular target data state; and boosting channel voltage levels for the memory cells of the memory selected to be programmed to the subset of target data states that are lower than the particular target data state; wherein boosting the channel voltage levels comprises: applying a multi-step pass signal to access lines of the memory prior to programming the memory cells of the memory selected to be programmed to the particular target data state; and for each memory cell of the memory cells of the memory selected to be programmed to the subset of target data states, increasing a voltage level of a data line selectively connected to that memory cell to an inhibit voltage prior to a respective step of the multi-step pass signal corresponding to its respective target data state, wherein the step corresponding to any target data state of the plurality of target data states is a different step of the multi-step pass signal than the step corresponding to each remaining target data state of the plurality of target data states. applying a multi-step pass signal to access lines of the memory prior to programming the memory cells of the memory selected to be programmed to the particular target data state; and for each memory cell of the memory cells of the memory selected to be programmed to the subset of target data states, increasing a voltage level of a data line selectively connected to that memory cell to an inhibit voltage prior to a respective step of the multi-step pass signal corresponding to its respective target data state, wherein the step corresponding to any target data state of the plurality of target data states is a different step of the multi-step pass signal than the step corresponding to each remaining target data state of the plurality of target data states. <EOS>