An electronic circuit (600; 700; 800; 900; 1000; 1100), comprising: a substrate having a major surface, the substrate having a crystalline structure having a plurality of crystal unit cells , the plurality of crystal unit cells having a crystal axis parallel to an edge of one of the plurality of crystal unit cells and parallel to the major surface of the substrate; a first plurality of vertical Hall elements coupled in a first parallel arrangement, each one of the first plurality of vertical Hall elements having a respective longest dimension and a respective shortest dimension parallel to a first axis , the first axis is parallel to the major surface of the substrate, wherein the first axis is disposed in a direction of between plus five and minus five degrees relative to the crystal axis , wherein the first plurality of vertical Hall elements taken together has a first geometric centroid on the major surface of the substrate; a second plurality of vertical Hall elements coupled in a second parallel arrangement, each one of the second plurality of vertical Hall elements having a respective longest dimension and a respective shortest dimension parallel to a second axis , the second axis is parallel to the major surface of the substrate, wherein an angle between the first and second axes is between eighty-five and ninety-five degrees, wherein the second plurality of vertical Hall elements taken together has a second geometric centroid on the major surface of the substrate, wherein the first and second centroids have a separation on the major surface of the substrate less than half of the longest dimension plus two times the shortest dimension of any one of the first plurality or the second plurality of vertical Hall elements. a substrate having a major surface, the substrate having a crystalline structure having a plurality of crystal unit cells , the plurality of crystal unit cells having a crystal axis parallel to an edge of one of the plurality of crystal unit cells and parallel to the major surface of the substrate; a first plurality of vertical Hall elements coupled in a first parallel arrangement, each one of the first plurality of vertical Hall elements having a respective longest dimension and a respective shortest dimension parallel to a first axis , the first axis is parallel to the major surface of the substrate, wherein the first axis is disposed in a direction of between plus five and minus five degrees relative to the crystal axis , wherein the first plurality of vertical Hall elements taken together has a first geometric centroid on the major surface of the substrate; a second plurality of vertical Hall elements coupled in a second parallel arrangement, each one of the second plurality of vertical Hall elements having a respective longest dimension and a respective shortest dimension parallel to a second axis , the second axis is parallel to the major surface of the substrate, wherein an angle between the first and second axes is between eighty-five and ninety-five degrees, wherein the second plurality of vertical Hall elements taken together has a second geometric centroid on the major surface of the substrate, wherein the first and second centroids have a separation on the major surface of the substrate less than half of the longest dimension plus two times the shortest dimension of any one of the first plurality or the second plurality of vertical Hall elements. <EOS>