An emitting device comprising : - a first light emitter , the first light emitter being adapted to emit a first radiation, and - a second light emitter , the second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter , the second light emitter comprising a second semiconducting structure and a second radiation converter , each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles (P), each particle (P) being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter , the particles (P) of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter , such as a surface of the first semiconducting structure, and characterized in that the particles (P) of the second radiation converter are attached by grafting to a surface of the second light emitter , such as a surface of the second semiconducting structure. - a first light emitter , the first light emitter being adapted to emit a first radiation, and - a second light emitter , the second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter , the second light emitter comprising a second semiconducting structure and a second radiation converter , each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles (P), each particle (P) being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter , the particles (P) of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter , such as a surface of the first semiconducting structure, and characterized in that the particles (P) of the second radiation converter are attached by grafting to a surface of the second light emitter , such as a surface of the second semiconducting structure. the first light emitter comprising a first semiconducting structure and a first radiation converter , the second light emitter comprising a second semiconducting structure and a second radiation converter , each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles (P), each particle (P) being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter , the particles (P) of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter , such as a surface of the first semiconducting structure, and characterized in that the particles (P) of the second radiation converter are attached by grafting to a surface of the second light emitter , such as a surface of the second semiconducting structure. <EOS>