Method for producing a multi-layer for a probe card for a testing apparatus for electronic devices, comprising the steps of: - providing a plurality of dielectric layers (30a-30n) starting from a first dielectric layer to a last dielectric layer ; - realizing, by laser ablation, in each dielectric layer of said plurality of dielectric layer (30a-30n) a plurality of pass-through structures occurring in matching number in each dielectric layer in , said matching number of pass-through structures being adapted to put into contact opposite faces of each dielectric layer ; - filling said plurality of pass-through structures through a conductive material to realize in each dielectric layer a plurality of conductive structures ; and - superimposing said plurality of dielectric layers (30a-30n) in a way that each conductive structure of said plurality of conductive structures of each dielectric layer is in contact with a corresponding conductive structure of said plurality of conductive structures of a subsequent and contiguous dielectric layer in said multi-layer and forms a plurality of conductive paths ; said conductive paths establishing an electrical connection between a first plurality of contact pads realized on a first face (F1) of said multi-layer in correspondence of an exposed face of said first dielectric layer and a second plurality of contact pads realized on a second and opposite face (F2) of said multi-layer , in correspondence of an exposed face of said last dielectric layer , said second plurality of contact pads having a greater pitch than said first plurality of contact pads , said multi-layer thus performing a spatial transformation between said plurality of contact pads connected through said connective paths , characterized in that said step of realizing in each dielectric layer said plurality of pass-through structures comprises a step of realizing at least one pass-through hole , said pass-through hole transversally extending and connecting opposite faces of a corresponding dielectric layer , and wherein said step of realizing in each dielectric layer said plurality of pass-through structures further comprises a step of realizing at least one recess , said recess longitudinally extending starting from said pass-through hole at the surface of said dielectric layer . - providing a plurality of dielectric layers (30a-30n) starting from a first dielectric layer to a last dielectric layer ; - realizing, by laser ablation, in each dielectric layer of said plurality of dielectric layer (30a-30n) a plurality of pass-through structures occurring in matching number in each dielectric layer in , said matching number of pass-through structures being adapted to put into contact opposite faces of each dielectric layer ; - filling said plurality of pass-through structures through a conductive material to realize in each dielectric layer a plurality of conductive structures ; and - superimposing said plurality of dielectric layers (30a-30n) in a way that each conductive structure of said plurality of conductive structures of each dielectric layer is in contact with a corresponding conductive structure of said plurality of conductive structures of a subsequent and contiguous dielectric layer in said multi-layer and forms a plurality of conductive paths ; <EOS>