A light emitting diode (LED) chip (80; 130), comprising: an active LED structure (82; 132) comprising an active layer (88; 138) between two oppositely doped layers (84, 86; 134, 136), said active layer (88; 138) configured to emit light in response to an electrical signal applied to said oppositely doped layers (84, 86; 134, 136); a first reflective layer (92; 142) adjacent one of said oppositely doped layers (84, 86; 134, 136), and having an index of refraction different than said active LED structure (82; 132), said first reflective layer (92; 142) configured to reflect at least some active layer light; a second reflective layer (94; 144) on said first reflective layer (92; 142), said second reflective layer (94; 144) configured to reflect light not reflected by said first reflective layer (92; 142); a barrier layer (102; 152) on said second reflective layer (94; 144); vias (100; 150) through said first reflective layer (92; 142), wherein said second reflective layer (94;144) forms said vias (100; 150), and wherein said second reflective layer (94; 144) is a metal layer; a passivation layer (106; 156) on said barrier layer (102 152), where said passivation layer (106; 156) is electrically insulating; an adhesion layer (96; 146) between said first reflective layer (92; 142) and said second reflective layer (94; 144); and a current spreading layer (90; 140) between said first reflective layer (92; 142) and said active LED structure (82; 132); wherein the first reflective layer (94;144) comprises a dielectric material and has a thickness in a range from 0.3 μm to 0.7 μm; and wherein said second reflective layer (94; 144) that forms said vias is arranged through said first reflective layer (92; 142), characterised in that said second reflective layer that forms said vias is arranged through said adhesion layer (96; 146) to directly contact said current spreading layer. an active LED structure (82; 132) comprising an active layer (88; 138) between two oppositely doped layers (84, 86; 134, 136), said active layer (88; 138) configured to emit light in response to an electrical signal applied to said oppositely doped layers (84, 86; 134, 136); a first reflective layer (92; 142) adjacent one of said oppositely doped layers (84, 86; 134, 136), and having an index of refraction different than said active LED structure (82; 132), said first reflective layer (92; 142) configured to reflect at least some active layer light; a second reflective layer (94; 144) on said first reflective layer (92; 142), said second reflective layer (94; 144) configured to reflect light not reflected by said first reflective layer (92; 142); a barrier layer (102; 152) on said second reflective layer (94; 144); vias (100; 150) through said first reflective layer (92; 142), wherein said second reflective layer (94;144) forms said vias (100; 150), and wherein said second reflective layer (94; 144) is a metal layer; a passivation layer (106; 156) on said barrier layer (102 152), where said passivation layer (106; 156) is electrically insulating; an adhesion layer (96; 146) between said first reflective layer (92; 142) and said second reflective layer (94; 144); and a current spreading layer (90; 140) between said first reflective layer (92; 142) and said active LED structure (82; 132); wherein the first reflective layer (94;144) comprises a dielectric material and has a thickness in a range from 0.3 μm to 0.7 μm; and wherein said second reflective layer (94; 144) that forms said vias is arranged through said first reflective layer (92; 142), <EOS>