A power switching circuit, comprising: a first terminal ; a second terminal ; a third terminal ; and a plurality of switching devices , each switching device having: a first GaN transistor having a first gate, a first source , and a first drain; a second transistor having a second gate, a second source, a second drain coupled to the first source, and a bipolar body diode coupled between the second drain and the second source; and a unipolar diode having an anode coupled to the first gate of the first GaN transistor and having a cathode coupled to the first source to regulate a transition voltage applied across the first gate and the first source during a transition period such that the transition voltage remains below a degradation threshold of the first GaN transistor during the transition period, wherein a first switching device of the plurality of switching devices is coupled to the first terminal via the first drain and the third terminal via the second source, and a second switching device of the plurality of switching devices is coupled to the second terminal via the second source and the third terminal via the first drain. a first terminal ; a second terminal ; a third terminal ; and a plurality of switching devices , each switching device having: a first GaN transistor having a first gate, a first source , and a first drain; a second transistor having a second gate, a second source, a second drain coupled to the first source, and a bipolar body diode coupled between the second drain and the second source; and a unipolar diode having an anode coupled to the first gate of the first GaN transistor and having a cathode coupled to the first source to regulate a transition voltage applied across the first gate and the first source during a transition period such that the transition voltage remains below a degradation threshold of the first GaN transistor during the transition period, wherein a first switching device of the plurality of switching devices is coupled to the first terminal via the first drain and the third terminal via the second source, and a second switching device of the plurality of switching devices is coupled to the second terminal via the second source and the third terminal via the first drain. a first GaN transistor having a first gate, a first source , and a first drain; a second transistor having a second gate, a second source, a second drain coupled to the first source, and a bipolar body diode coupled between the second drain and the second source; and a unipolar diode having an anode coupled to the first gate of the first GaN transistor and having a cathode coupled to the first source to regulate a transition voltage applied across the first gate and the first source during a transition period such that the transition voltage remains below a degradation threshold of the first GaN transistor during the transition period, wherein a first switching device of the plurality of switching devices is coupled to the first terminal via the first drain and the third terminal via the second source, and a second switching device of the plurality of switching devices is coupled to the second terminal via the second source and the third terminal via the first drain. <EOS>