An emitting device comprising : - a first light emitter , the first light emitter being adapted to emit a first radiation, the first light emitter comprising at least one first semiconducting structure, the first semiconducting structure comprising a first semiconducting layer, the first semiconducting layer being adapted to emit the first radiation, - at least one second light emitter , each second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the second light emitter comprising at least one second semiconducting structure, the second semiconducting structure comprising a second semiconducting layer adapted to emit the second radiation, and wherein the first light emitter and the second light emitter are each deprived of radiation converter and the emitting device further comprises: - at least one third light emitter , each third light emitter being adapted to emit a third radiation, the third radiation being different from the second radiation and from the first radiation, the third light emitter comprising at least one third semiconducting structure, the third semiconducting structure comprising a third semiconducting layer adapted to emit a fourth radiation, the fourth radiation being different from the third radiation, the third light emitter further comprising a radiation converter configured to convert the fourth radiation into the third radiation, and each radiation converter comprising a set of particles (P) configured to convert the fourth radiation into the third radiation, the set of particles (P) comprising a set of quantum dots and a set of particles transparent to the third radiation, - at least one wall able to prevent a radiation emitted by one light emitter from reaching another light emitter by reflecting said radiation emitted by one light emitter . - a first light emitter , the first light emitter being adapted to emit a first radiation, the first light emitter comprising at least one first semiconducting structure, the first semiconducting structure comprising a first semiconducting layer, the first semiconducting layer being adapted to emit the first radiation, - at least one second light emitter , each second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the second light emitter comprising at least one second semiconducting structure, the second semiconducting structure comprising a second semiconducting layer adapted to emit the second radiation, and - at least one third light emitter , each third light emitter being adapted to emit a third radiation, the third radiation being different from the second radiation and from the first radiation, the third light emitter comprising at least one third semiconducting structure, the third semiconducting structure comprising a third semiconducting layer adapted to emit a fourth radiation, the fourth radiation being different from the third radiation, the third light emitter further comprising a radiation converter configured to convert the fourth radiation into the third radiation, and each radiation converter comprising a set of particles (P) configured to convert the fourth radiation into the third radiation, the set of particles (P) comprising a set of quantum dots and a set of particles transparent to the third radiation, - at least one wall able to prevent a radiation emitted by one light emitter from reaching another light emitter by reflecting said radiation emitted by one light emitter . <EOS>