Method of fabricating at least one radiation emitter comprising the steps of fabricating a layer stack that comprises a first reflector , an active region , an oxidizable layer , and a second reflector ; and locally removing the layer stack , and thereby forming at least one mesa (M), wherein the at least one mesa (M) comprises the first reflector , the active region , the oxidizable layer and the second reflector , wherein before or after locally removing the layer stack and forming the at least one mesa (M) the following steps are carried out: vertically etching at least three blind holes per radiation emitter inside the layer stack , wherein the blind holes vertically extend at least to the oxidizable layer and expose the oxidizable layer ; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction, wherein from each hole an oxidation front radially moves outwards and wherein the etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts , per radiation emitter , characterized in that the blind holes are filled with a conducting material or at least the sidewalls of the holes are covered with the conducting material , wherein the conducting material is thermally and electrically conductive, and an intermediate isolating layer is deposited on the bottom and a lower section of the blind holes . fabricating a layer stack that comprises a first reflector , an active region , an oxidizable layer , and a second reflector ; and locally removing the layer stack , and thereby forming at least one mesa (M), wherein the at least one mesa (M) comprises the first reflector , the active region , the oxidizable layer and the second reflector , wherein before or after locally removing the layer stack and forming the at least one mesa (M) the following steps are carried out: vertically etching at least three blind holes per radiation emitter inside the layer stack , wherein the blind holes vertically extend at least to the oxidizable layer and expose the oxidizable layer ; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction, wherein from each hole an oxidation front radially moves outwards and wherein the etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts , per radiation emitter , characterized in that the blind holes are filled with a conducting material or at least the sidewalls of the holes are covered with the conducting material , wherein the conducting material is thermally and electrically conductive, and an intermediate isolating layer is deposited on the bottom and a lower section of the blind holes . vertically etching at least three blind holes per radiation emitter inside the layer stack , wherein the blind holes vertically extend at least to the oxidizable layer and expose the oxidizable layer ; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction, wherein from each hole an oxidation front radially moves outwards and wherein the etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts , per radiation emitter , characterized in that the blind holes are filled with a conducting material or at least the sidewalls of the holes are covered with the conducting material , wherein the conducting material is thermally and electrically conductive, and an intermediate isolating layer is deposited on the bottom and a lower section of the blind holes . <EOS>