A light emitting device comprising: a first light emitting cell (LEC1) disposed in a first region (AR1) on a substrate and comprising a first conductivity type semiconductor layer , an active layer , and a second conductivity type semiconductor layer ; a second light emitting cell (LEC2) disposed in a second region (AR2) on the substrate to be spaced apart from the first light emitting cell (LEC1) and comprising a first conductivity type semiconductor layer , an active layer , and a second conductivity type semiconductor layer ; a first conductive pattern disposed in the first region (AR1) and comprising contact portions (CT2) electrically connected to the first conductivity type semiconductor layer of the first light emitting cell (LEC1); and a connection pattern comprising contact portions (CT4) electrically connected to the second conductivity type semiconductor layer of the first light emitting cell (LEC1) and contact portions (CT5) electrically connected to the first conductivity type semiconductor layer of the second light emitting cell (LEC2), wherein the first conductive pattern comprises concave portions in a plan view formed on the first region (AR1) to be indented from a first side surface (SD1) facing the second region (AR2) into the first conductive pattern , wherein the connection pattern comprises convex portions in the plan view electrically contacting the contact portions (CT4) of the connection pattern electrically connected to the second conductivity type semiconductor layer and extending from the second region (AR2) to the first region (AR1), and wherein the concave portions and the convex portions are facing each other while being spaced apart from each other. a first light emitting cell (LEC1) disposed in a first region (AR1) on a substrate and comprising a first conductivity type semiconductor layer , an active layer , and a second conductivity type semiconductor layer ; a second light emitting cell (LEC2) disposed in a second region (AR2) on the substrate to be spaced apart from the first light emitting cell (LEC1) and comprising a first conductivity type semiconductor layer , an active layer , and a second conductivity type semiconductor layer ; a first conductive pattern disposed in the first region (AR1) and comprising contact portions (CT2) electrically connected to the first conductivity type semiconductor layer of the first light emitting cell (LEC1); and a connection pattern comprising contact portions (CT4) electrically connected to the second conductivity type semiconductor layer of the first light emitting cell (LEC1) and contact portions (CT5) electrically connected to the first conductivity type semiconductor layer of the second light emitting cell (LEC2), wherein the first conductive pattern comprises concave portions in a plan view formed on the first region (AR1) to be indented from a first side surface (SD1) facing the second region (AR2) into the first conductive pattern , wherein the connection pattern comprises convex portions in the plan view electrically contacting the contact portions (CT4) of the connection pattern electrically connected to the second conductivity type semiconductor layer and extending from the second region (AR2) to the first region (AR1), and wherein the concave portions and the convex portions are facing each other while being spaced apart from each other. <EOS>