A method of forming a transistor device, comprising: providing a drift layer comprising silicon carbide having a first conductivity type; doping an upper portion of the drift layer with dopants of the first conductivity type more heavily than a lower portion of the drift layer to form a current spreading region in the upper portion of the drift layer ; forming a first region in the drift layer , the first region having a second conductivity type that is opposite the first conductivity type, wherein the depth to which the first region extends into the drift layer is less than a thickness of the upper portion of the drift layer ; forming a body layer comprising silicon carbide having the second conductivity type on the drift layer including the first region ; forming a source layer comprising silicon carbide on the body layer , the source layer having the first conductivity type; forming a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region ; forming a trench in the source layer and the body layer , the trench extending into the drift layer adjacent the first region , the trench having an inner sidewall facing away from the first region ; forming a gate insulator on the inner sidewall of the trench ; forming a gate contact on the gate insulator ; and forming a source ohmic contact on the source layer and on the body contact region , wherein the body contact region conductively connects the first region to the source ohmic contact , wherein forming the first region comprises selectively implanting dopants into the drift layer at an implant energy of less than 1000keV at a doping concentration of between 1×10 18 cm -3 and 1×10 21 cm -3 . providing a drift layer comprising silicon carbide having a first conductivity type; doping an upper portion of the drift layer with dopants of the first conductivity type more heavily than a lower portion of the drift layer to form a current spreading region in the upper portion of the drift layer ; forming a first region in the drift layer , the first region having a second conductivity type that is opposite the first conductivity type, wherein the depth to which the first region extends into the drift layer is less than a thickness of the upper portion of the drift layer ; forming a body layer comprising silicon carbide having the second conductivity type on the drift layer including the first region ; forming a source layer comprising silicon carbide on the body layer , the source layer having the first conductivity type; forming a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region ; forming a trench in the source layer and the body layer , the trench extending into the drift layer adjacent the first region , the trench having an inner sidewall facing away from the first region ; forming a gate insulator on the inner sidewall of the trench ; forming a gate contact on the gate insulator ; and forming a source ohmic contact on the source layer and on the body contact region , wherein the body contact region conductively connects the first region to the source ohmic contact , wherein forming the first region comprises selectively implanting dopants into the drift layer at an implant energy of less than 1000keV at a doping concentration of between 1×10 18 cm -3 and 1×10 21 cm -3 . <EOS>