A method comprising: determining a position of one or more impact wires (118 , 118 ,..., 118(n)) disposed in a transfer head , one or more semiconductor device die on a first substrate , and one or more transfer locations on a second substrate; determining whether there are at least two positions on the second substrate where at least one impact wire, at least one semiconductor device die, and at least one transfer location are aligned within a threshold tolerance; adjusting the position of at least one of the one or more impact wires, the one or more semiconductor device die, or the one or more transfer locations, based at least in part on a determination that at least two impact wires, at least two semiconductor device die, and at least two transfer locations are aligned below the threshold tolerance; determining whether the adjusting includes adjusting the position of the at least one of the one or more impact wires, the one or more semiconductor device die, or the one or more transfer locations by an adjustment distance that is above or below a predetermined distance threshold; completing the adjustment on a first axis of movement, based at least in part on a determination that the adjustment distance is below the predetermined distance threshold; and transferring, by at least two impact wires, at least two semiconductor device die from the first substrate to at least two transfer locations on the second substrate, based at least in part on determining that there are at least two positions where at least one impact wire, at least one semiconductor device die, and at least one transfer location are aligned within the threshold tolerance. determining a position of one or more impact wires (118 , 118 ,..., 118(n)) disposed in a transfer head , one or more semiconductor device die on a first substrate , and one or more transfer locations on a second substrate; determining whether there are at least two positions on the second substrate where at least one impact wire, at least one semiconductor device die, and at least one transfer location are aligned within a threshold tolerance; adjusting the position of at least one of the one or more impact wires, the one or more semiconductor device die, or the one or more transfer locations, based at least in part on a determination that at least two impact wires, at least two semiconductor device die, and at least two transfer locations are aligned below the threshold tolerance; determining whether the adjusting includes adjusting the position of the at least one of the one or more impact wires, the one or more semiconductor device die, or the one or more transfer locations by an adjustment distance that is above or below a predetermined distance threshold; completing the adjustment on a first axis of movement, based at least in part on a determination that the adjustment distance is below the predetermined distance threshold; and transferring, by at least two impact wires, at least two semiconductor device die from the first substrate to at least two transfer locations on the second substrate, based at least in part on determining that there are at least two positions where at least one impact wire, at least one semiconductor device die, and at least one transfer location are aligned within the threshold tolerance. <EOS>