A gas property sensor , comprising: a semiconductor measuring device having defined therein: a cavity that is filled with a gas and has an opening ; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume ; a pressure generator disposed in the cavity ; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, characterized in that the measuring device comprises: a substrate having first and second surfaces ; a first semiconductor chip portion mounted on the first surface of the substrate , the cavity being defined within the first semiconductor chip portion ; and a second semiconductor chip portion mounted on the first semiconductor chip portion , the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device , wherein the cavity is open to the channel via the opening , wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator , to cause gas to flow through the flow channel a semiconductor measuring device having defined therein: a cavity that is filled with a gas and has an opening ; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume ; a pressure generator disposed in the cavity ; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, a cavity that is filled with a gas and has an opening ; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume ; a pressure generator disposed in the cavity ; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, characterized in that the measuring device comprises: a substrate having first and second surfaces ; a first semiconductor chip portion mounted on the first surface of the substrate , the cavity being defined within the first semiconductor chip portion ; and a second semiconductor chip portion mounted on the first semiconductor chip portion , the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device , wherein the cavity is open to the channel via the opening , wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator , to cause gas to flow through the flow channel a substrate having first and second surfaces ; a first semiconductor chip portion mounted on the first surface of the substrate , the cavity being defined within the first semiconductor chip portion ; and a second semiconductor chip portion mounted on the first semiconductor chip portion , the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device , wherein the cavity is open to the channel via the opening , wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator , to cause gas to flow through the flow channel <EOS>