A light emitting diode (LED) structure, comprising: a substrate ; and a plurality of LED units formed on the substrate , each LED unit comprising: a first doping semiconductor layer ; a multiple quantum well (MQW) layer formed on the first doping semiconductor layer ; and a second doping semiconductor layer formed on the MQW layer , wherein the plurality of LED units comprise a first LED unit and a second LED unit formed on the substrate and horizontally adjacent to each other, wherein the second doping semiconductor layer of the first LED unit is electrically isolated with the second doping semiconductor layer of the second LED unit by an ion-implanted material formed above the first doping semiconductor layer and the MQW layer , wherein the plurality of LED units further comprises a third LED unit formed above the ion-implanted material, the first LED unit and the second LED unit are configured to emit light of a first color, the third LED unit is configured to emit light of a second color different from the first color, and wherein a color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color. a substrate ; and a plurality of LED units formed on the substrate , each LED unit comprising: a first doping semiconductor layer ; a multiple quantum well (MQW) layer formed on the first doping semiconductor layer ; and a second doping semiconductor layer formed on the MQW layer , wherein the plurality of LED units comprise a first LED unit and a second LED unit formed on the substrate and horizontally adjacent to each other, wherein the second doping semiconductor layer of the first LED unit is electrically isolated with the second doping semiconductor layer of the second LED unit by an ion-implanted material formed above the first doping semiconductor layer and the MQW layer , wherein the plurality of LED units further comprises a third LED unit formed above the ion-implanted material, the first LED unit and the second LED unit are configured to emit light of a first color, the third LED unit is configured to emit light of a second color different from the first color, and wherein a color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color. a first doping semiconductor layer ; a multiple quantum well (MQW) layer formed on the first doping semiconductor layer ; and a second doping semiconductor layer formed on the MQW layer , wherein the plurality of LED units comprise a first LED unit and a second LED unit formed on the substrate and horizontally adjacent to each other, wherein the second doping semiconductor layer of the first LED unit is electrically isolated with the second doping semiconductor layer of the second LED unit by an ion-implanted material formed above the first doping semiconductor layer and the MQW layer , wherein the plurality of LED units further comprises a third LED unit formed above the ion-implanted material, the first LED unit and the second LED unit are configured to emit light of a first color, the third LED unit is configured to emit light of a second color different from the first color, and wherein a color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color. <EOS>