Wafer-level process for bending microelectronic components , comprising the following steps: o producing a microelectronic structure , comprising a microelectronic substrate , having an upper face and an opposite lower face , comprising a plurality of microelectronic components , which each comprise lower conductive pads located on the lower face and intended to allow the microelectronic component to be connected electrically; o providing a shaping carrier , having an upper face and an opposite lower face , the upper face comprising a plurality of curved surfaces ; o depositing an adhesive lower layer having a thickness larger than the thickness of the lower conductive pads , so as either to entirely cover the lower face of the microelectronic substrate and the lower conductive pads such that the adhesive lower layer has a free lower face that is continuous and therefore not passed right through by the lower conductive pads which would otherwise protrude from this adhesive lower layer , or to cover the curved surfaces ; o dicing at least the microelectronic substrate to singulate the microelectronic components ; then o transferring the microelectronic components to the shaping carrier ; then o bending the microelectronic components , the adhesive lower layer then making contact with the lower face of the microelectronic components and with the corresponding curved surface , thus preventing the lower conductive pads from making contact with the curved surface ; then o producing conductive vias that extend through the shaping carrier and the adhesive lower layer , from the lower face of the shaping carrier , in order to emerge onto the lower conductive pads . o producing a microelectronic structure , comprising a microelectronic substrate , having an upper face and an opposite lower face , comprising a plurality of microelectronic components , which each comprise lower conductive pads located on the lower face and intended to allow the microelectronic component to be connected electrically; o providing a shaping carrier , having an upper face and an opposite lower face , the upper face comprising a plurality of curved surfaces ; o depositing an adhesive lower layer having a thickness larger than the thickness of the lower conductive pads , so as either to entirely cover the lower face of the microelectronic substrate and the lower conductive pads such that the adhesive lower layer has a free lower face that is continuous and therefore not passed right through by the lower conductive pads which would otherwise protrude from this adhesive lower layer , or to cover the curved surfaces ; o dicing at least the microelectronic substrate to singulate the microelectronic components ; then o transferring the microelectronic components to the shaping carrier ; then o bending the microelectronic components , the adhesive lower layer then making contact with the lower face of the microelectronic components and with the corresponding curved surface , thus preventing the lower conductive pads from making contact with the curved surface ; then o producing conductive vias that extend through the shaping carrier and the adhesive lower layer , from the lower face of the shaping carrier , in order to emerge onto the lower conductive pads . <EOS>