A capacitor structure comprising: - a silicon substrate with a first side and an opposite second side , - a Metal Insulator Metal trench capacitor including: ∘ a basis electrode , forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side , the basis electrode coupled to the substrate , ∘ a first insulator layer stacked on the basis electrode in the trench , ∘ an second conductive layer stacked on the first insulator layer in the trench , wherein a second pad and a fourth pad are coupled to the basis electrode , wherein the second pad is located on the first side of the silicon substrate and the fourth pad is located on the opposite second side of the silicon substrate , and wherein a first pad and a third pad are coupled together and insulated on one hand from the silicon substrate and on the other hand from the second pad and the fourth pad , the first pad being located on the first side of the silicon substrate , the third pad being located on the opposite second side of the silicon substrate , the third pad being coupled to the second conductive layer , characterized in that , the trench capacitor is a double Metal Insulator Metal trench capacitor including: o a second insulator layer stacked on the second conductive layer in the trench , and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode , wherein said second conductive layer protrudes from said opposite second side of the silicon substrate . - a silicon substrate with a first side and an opposite second side , - a Metal Insulator Metal trench capacitor including: ∘ a basis electrode , forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side , the basis electrode coupled to the substrate , ∘ a first insulator layer stacked on the basis electrode in the trench , ∘ an second conductive layer stacked on the first insulator layer in the trench , ∘ a basis electrode , forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side , the basis electrode coupled to the substrate , ∘ a first insulator layer stacked on the basis electrode in the trench , ∘ an second conductive layer stacked on the first insulator layer in the trench , wherein a second pad and a fourth pad are coupled to the basis electrode , wherein the second pad is located on the first side of the silicon substrate and the fourth pad is located on the opposite second side of the silicon substrate , and wherein a first pad and a third pad are coupled together and insulated on one hand from the silicon substrate and on the other hand from the second pad and the fourth pad , the first pad being located on the first side of the silicon substrate , the third pad being located on the opposite second side of the silicon substrate , the third pad being coupled to the second conductive layer , characterized in that , the trench capacitor is a double Metal Insulator Metal trench capacitor including: o a second insulator layer stacked on the second conductive layer in the trench , and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode , wherein said second conductive layer protrudes from said opposite second side of the silicon substrate . o a second insulator layer stacked on the second conductive layer in the trench , and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode , wherein <EOS>