A solar cell comprising: a semiconductor substrate of a first conductivity type having a first conductivity type diffusion layer and a second conductivity type diffusion layer which are formed on a backside of a light-receiving surface of the semiconductor substrate , a first electrode portion joined to the first conductivity type diffusion layer , and a second electrode portion joined to the second conductivity type diffusion layer , a first electrode line portion formed on the first electrode portion , a second electrode line portion formed on the second electrode portion , a first electrode bus bar portion connected with the first electrode line portion , and a second electrode bus bar portion connected with the second electrode line portion ; a first insulator film which is formed so as to cover a side portion and a top of the second electrode portion at least in an intersection region of the second electrode portion and the first electrode bus bar portion , a second insulator film which is formed so as to cover a side portion and a top of the first electrode portion at least in an intersection region of the first electrode portion and the second electrode bus bar portion , wherein the second electrode portion is at least formed continuously in a line shape under the first insulator film , the first electrode portion is at least formed continuously in a line shape under the second insulator film , the first electrode line portion is provided as a continuous line shape on the first electrode portion , except for the region where the second insulator film is located, so as to connect at least with the continuously formed line-shaped first electrode portion, the second electrode line portion is provided as a continuous line shape on the second electrode portion , except for the region where the first insulator film is located, so as to connect at least with the continuously formed line-shaped second electrode portion. a semiconductor substrate of a first conductivity type having a first conductivity type diffusion layer and a second conductivity type diffusion layer which are formed on a backside of a light-receiving surface of the semiconductor substrate , a first electrode portion joined to the first conductivity type diffusion layer , and a second electrode portion joined to the second conductivity type diffusion layer , a first electrode line portion formed on the first electrode portion , a second electrode line portion formed on the second electrode portion , a first electrode bus bar portion connected with the first electrode line portion , and a second electrode bus bar portion connected with the second electrode line portion ; a first insulator film which is formed so as to cover a side portion and a top of the second electrode portion at least in an intersection region of the second electrode portion and the first electrode bus bar portion , a second insulator film which is formed so as to cover a side portion and a top of the first electrode portion at least in an intersection region of the first electrode portion and the second electrode bus bar portion , wherein the second electrode portion is at least formed continuously in a line shape under the first insulator film , the first electrode portion is at least formed continuously in a line shape under the second insulator film , the first electrode line portion is provided as a continuous line shape on the first electrode portion , except for the region where the second insulator film is located, so as to connect at least with the continuously formed line-shaped first electrode portion, the second electrode line portion is provided as a continuous line shape on the second electrode portion , except for the region where the first insulator film is located, so as to connect at least with the continuously formed line-shaped second electrode portion. <EOS>