mhurhangee/patent-ind-claim-en huggingface dataset:
A deposition apparatus comprising: an outer reactor including an openable and closable door ; and an inner reactor configured to be detachably fitted into the outer reactor through the door , wherein a volume of the outer reactor and a volume of the inner reactor are spatially divided by the inner reactor , wherein connectors are provided on the opposite ends of the inner reactor to be connected to feed lines , along which a precursor serving as a reactant or a purge gas is loaded from outside the outer reactor into the inner reactor in a time division manner, wherein the connectors of the inner reactor have a greater cross-sectional area than the feed lines , wherein the apparatus comprises a heater able to heat an entirety or a portion of the inner reactor or the outer reactor to enable the atomic layer deposition or digital chemical vapor deposition reaction, a non-reacted portion of a reactant or the purge gas residing in the inner reactor is configured to be discharged from the deposition apparatus through the feed lines or an outlet of the outer reactor due to a space (C) present due to a difference in the cross-sectional area between the connectors and the feed lines , and the inner reactor being of a spiral structure. an outer reactor including an openable and closable door ; and an inner reactor configured to be detachably fitted into the outer reactor through the door , wherein a volume of the outer reactor and a volume of the inner reactor are spatially divided by the inner reactor , wherein connectors are provided on the opposite ends of the inner reactor to be connected to feed lines , along which a precursor serving as a reactant or a purge gas is loaded from outside the outer reactor into the inner reactor in a time division manner, wherein the connectors of the inner reactor have a greater cross-sectional area than the feed lines , wherein the apparatus comprises a heater able to heat an entirety or a portion of the inner reactor or the outer reactor to enable the atomic layer deposition or digital chemical vapor deposition reaction, a non-reacted portion of a reactant or the purge gas residing in the inner reactor is configured to be discharged from the deposition apparatus through the feed lines or an outlet of the outer reactor due to a space (C) present due to a difference in the cross-sectional area between the connectors and the feed lines , and the inner reactor being of a spiral structure.
Magnetic base for a power tool , in particular for a magnetic core drilling machine , having a base body in which at least one first magnetic coil forming an electromagnet is accommodated in a receiving space , the magnetic force of which coil is switchable between a maximum resulting holding force and a minimum resulting holding force, the base body comprising a first side , which can be coupled to the power tool , and an opposite second side , which can be placed on a workpiece to be machined, the receiving space is configured in such a way that insertion of the at least one magnetic coil into the receiving space is possible, which can be placed on a workpiece to be machined, the receiving space being configured in such a way that insertion of the at least one magnetic coil into the receiving space is only possible from the first side and the receiving space on the second side is delimited by a bottom , which is formed integrally with the base body , characterized in that the thickness of the bottom of the receiving space is 0.2 mm or more, and is less than 0.8 mm or is 0.8 mm.
A wheelset for rail vehicles, comprising at least one wheel and a wheelset shaft with at least one press fit , wherein the wheel is joined to a wheel hub bore by longitudinal pressing or shrinking on the press fit of the wheelset shaft , characterized in that a surface coating of a non-ferrous metal or a non-ferrous metal alloy which increases adhesion relative to a material of the wheel is applied to the wheel hub bore of the wheel , and the surface coating consists of high-purity copper or a copper alloy of high-purity copper, and the high-purity copper degrees of purity of 90% to 99.9%has , and the surface coating has a roughness (Ra) of up to 30 μm in a raw, mechanically non-reworked state.
A composition for the production of calcium sulfoalum inate (CSA) steel-reinforced concrete, comprising a calcium sulfoaluminate cement and a passivating salt selected from a nitrite of an alkali or alkaline-earth metal, a nitrate of an alkali or alkaline-earth metal and mixtures thereof, wherein the molar concentration of the anion of the passivating salt is in the range from 15 to 500 mol per 1 cubic meter (m 3 ) of concrete.
A tobacco packing , which comprises a cellulose substrate , characterized in that the cellulose substrate is coated with a water-repellent layer at least in certain areas, wherein the water-repellent layer includes a polymeric chromium (III) complex with at least one organic ligand (R), wherein the at least one organic ligand (R) is selected from a group including saturated fatty acids and mono- or polyunsaturated fatty acids, and wherein an application amount of the water-repellent layer on the cellulose substrate is between 0.01 g/m 2 and 5 g/m 2 .
Safety valve adapted to a gas combustion appliance, comprising a body comprising an inlet conduit and an outlet conduit for the gas, a magnetic group housed at least partially in a housing of the body , opening or closing gas passage from the inlet conduit to the outlet conduit and comprising an electromagnet and a support of said electromagnet , a bushing inserted in the magnetic group and coupled to the support , and fixing means for fixing the bushing and the magnetic group to the body , the fixing means comprising a fixing element comprising a cylindrical central part the free end of said cylindrical central part being adapted to the geometry of the body retaining the fixing element against the body , and an annular flange extending radially towards the inside and retaining the bushing against the support , the fixing element being placed on the bushing such that the annular flange presses on a base of the bushing against the body and the magnetic group , characterized in that the free end of the central part is crimped to the body of the valve such that the fixing element remains fixed to the body .
A method of inferring a rate of rotational diffusion of a collection of fluorophores , the method comprising: applying a first pulse of light to the collection of fluorophores to excite a plurality of fluorophores in the collection of fluorophores to produce a plurality of excited fluorophores , the first pulse of light having a first polarization and the plurality of excited fluorophores having a component of their orientation aligned with the first polarization; applying a second pulse of light to the collection of fluorophores to induce saturated stimulated emission by the plurality of excited fluorophores , the second pulse of light having a second polarization orthogonal to the first polarization; applying a third pulse of light to the collection of fluorophores to induce further saturated stimulated emission by the plurality of excited fluorophores , the third pulse of light having the second polarization and being applied after a predetermined time delay following application of the second pulse of light; detecting polarized emissions from the plurality of excited fluorophores ; and inferring the rate of rotational diffusion of the collection of fluorophores based on the detected polarized emissions. applying a first pulse of light to the collection of fluorophores to excite a plurality of fluorophores in the collection of fluorophores to produce a plurality of excited fluorophores , the first pulse of light having a first polarization and the plurality of excited fluorophores having a component of their orientation aligned with the first polarization; applying a second pulse of light to the collection of fluorophores to induce saturated stimulated emission by the plurality of excited fluorophores , the second pulse of light having a second polarization orthogonal to the first polarization; applying a third pulse of light to the collection of fluorophores to induce further saturated stimulated emission by the plurality of excited fluorophores , the third pulse of light having the second polarization and being applied after a predetermined time delay following application of the second pulse of light; detecting polarized emissions from the plurality of excited fluorophores ; and inferring the rate of rotational diffusion of the collection of fluorophores based on the detected polarized emissions.
A drive module for displacing a closing element relative to a frame in a building opening by rotation about a connecting axis between the closing element and the frame , in particular for opening and closing the building opening , and for locking and unlocking the closing element in the frame , having a motor unit , a drive lever and a locking unit, the motor unit and the drive lever being connected to one another via a transmission, the transmission being set up to convert a force generated by the motor unit and/or a torque generated by the motor unit into a movement moment for displacing the drive lever wherein the movement moment causes a linear translational movement of the drive lever in a first gear position and a rotational movement of the drive lever in a second gear position, wherein the drive lever is set up to transmit the linear translational movement to the locking unit in the first gear position and the rotational movement to the closing element in the second gear position, wherein the transmission has a force transmission element connected to the motor unit and a force receiving section , wherein the force receiving section is part of the drive lever and has a guide section on its longitudinal extension, characterised in that the force receiving section has a terminal boundary along its longitudinal extension, wherein the force transmission element does not abut the terminal boundary in the first transmission position and abuts the terminal boundary in the second transmission position.
A nucleic acid molecule comprising a nucleic acid sequence set forth in SEQ ID NO: 1, or the nucleic acid sequence set forth in nucleotides 55 to 1584 of SEQ ID NO: 1.
A composition comprising a PD-1 antagonist or a TLR9 agonist for use in treating cancer in an individual comprising administering to the individual a combination therapy which comprises a PD-1 antagonist and a TLR9 agonist, wherein the TLR9 agonist is a CpG-C type oligonucleotide having a sequence consisting of 5'-TCGAACGTTCGAACGTTCGAACGTTCGAAT-3'(SEQ ID NO:45), and wherein the PD-1 antagonist is: (i) a monoclonal antibody, or antigen binding fragment thereof, which comprises light chain CDRs of SEQ ID NOs:7, 8 and 9 and heavy chain CDRs of SEQ ID NOs:10, 11 and 12, or (ii) an anti-PD-1 monoclonal antibody which comprises a heavy chain and a light chain, and wherein the heavy chain comprises SEQ ID NO:21 and the light chain comprises SEQ ID NO:22. (i) a monoclonal antibody, or antigen binding fragment thereof, which comprises light chain CDRs of SEQ ID NOs:7, 8 and 9 and heavy chain CDRs of SEQ ID NOs:10, 11 and 12, or (ii) an anti-PD-1 monoclonal antibody which comprises a heavy chain and a light chain, and wherein the heavy chain comprises SEQ ID NO:21 and the light chain comprises SEQ ID NO:22.
A method performed by core network equipment configured for use in a core network of a wireless communication system , wherein the wireless communication system comprises the core network and a radio access network , the method comprising: switching to using a new non-access stratum, NAS, security context between a user equipment and the core network equipment ; and during or in association with a handover procedure for handover of the user equipment , signaling from the core network equipment that the new NAS security context between the user equipment and the core network equipment is to be used as a basis for an access stratum (AS) security context between the user equipment and radio access network equipment ; characterised in that the said signaling is responsive to determining that the new NAS security context has been activated, that the new NAS security context is different from a NAS security context on which a currently active AS security context is based, and that the core network equipment has not yet performed an explicit security context modification procedure that prompts the radio access network equipment included in the radio access network and the user equipment to switch to using a new AS security context based on the new NAS security context. switching to using a new non-access stratum, NAS, security context between a user equipment and the core network equipment ; and during or in association with a handover procedure for handover of the user equipment , signaling from the core network equipment that the new NAS security context between the user equipment and the core network equipment is to be used as a basis for an access stratum (AS) security context between the user equipment and radio access network equipment ; characterised in that the said signaling is responsive to determining that the new NAS security context has been activated, that the new NAS security context is different from a NAS security context on which a currently active AS security context is based, and that the core network equipment has not yet performed an explicit security context modification procedure that prompts the radio access network equipment included in the radio access network and the user equipment to switch to using a new AS security context based on the new NAS security context.
A multijunction photovoltaic cell comprising: a germanium growth substrate; an upper group-IV subcell; a lower group-IV subcell, wherein the base of the lower group-IV subcell is formed in the germanium substrate; and a tunnel junction formed between the upper group-IV subcell and the lower group-IV subcell formed from the germanium growth substrate, the tunnel junction comprising: a tunnel junction first layer comprising a group-IV material having a p-type or n-type doping; and a tunnel junction second layer comprising a group-IV material different from the first layer group-IV material, and having a doping type opposite from the doping type of the first layer, wherein at least one of the tunnel junction first layer and the tunnel junction second layer have a different semiconductor composition than the upper group-IV subcell and the lower group-IV subcell; and wherein a tunnel junction is formed at a heterojunction between the first and second tunnel junction layers. a germanium growth substrate; an upper group-IV subcell; a lower group-IV subcell, wherein the base of the lower group-IV subcell is formed in the germanium substrate; and a tunnel junction formed between the upper group-IV subcell and the lower group-IV subcell formed from the germanium growth substrate, the tunnel junction comprising: a tunnel junction first layer comprising a group-IV material having a p-type or n-type doping; and a tunnel junction second layer comprising a group-IV material different from the first layer group-IV material, and having a doping type opposite from the doping type of the first layer, wherein at least one of the tunnel junction first layer and the tunnel junction second layer have a different semiconductor composition than the upper group-IV subcell and the lower group-IV subcell; and wherein a tunnel junction is formed at a heterojunction between the first and second tunnel junction layers. a tunnel junction first layer comprising a group-IV material having a p-type or n-type doping; and a tunnel junction second layer comprising a group-IV material different from the first layer group-IV material, and having a doping type opposite from the doping type of the first layer, wherein at least one of the tunnel junction first layer and the tunnel junction second layer have a different semiconductor composition than the upper group-IV subcell and the lower group-IV subcell; and wherein a tunnel junction is formed at a heterojunction between the first and second tunnel junction layers.
An apparatus for executing an application , the apparatus being configured to provide a standard zone and to provide a test zone , said standard zone comprising a standard execution environment providing access to genuine resources of the apparatus , said test zone comprising a test execution environment providing access to mock resources, a mock resource modeling a genuine resource of the apparatus , wherein the application has access to said genuine resources when the application is executed in said standard zone , and wherein the application has access to said mock resources when the application is executed in said test zone and wherein the application does not have access to said genuine resources when the application is executed in said test zone ; wherein the apparatus is further configured to provide a user with a choice which genuine resources corresponding to accessed mock resources the application will be allowed to be access by the application when the application is executed in the standard zone .. said standard zone comprising a standard execution environment providing access to genuine resources of the apparatus , said test zone comprising a test execution environment providing access to mock resources, a mock resource modeling a genuine resource of the apparatus , wherein the application has access to said genuine resources when the application is executed in said standard zone , and wherein the application has access to said mock resources when the application is executed in said test zone and wherein the application does not have access to said genuine resources when the application is executed in said test zone ; wherein the apparatus is further configured to provide a user with a choice which genuine resources corresponding to accessed mock resources the application will be allowed to be access by the application when the application is executed in the standard zone ..
Device for metering powder , which comprises a vessel containing powder and a sealing head with a septum for the vessel , and the vessel points downwards with its opening , so that the powder can flow out of the vessel , and the device further has a vessel holder , which serves to hold the sealing head of the vessel , wherein the vessel holder has a cannula for piercing the septum and a gas for fluidizing the downward-flowing powder is fed to the canula , and further a metering system is provided, which is based on the filling of a volume in a connecting hose separable by valves , wherein the bulk density of the powder in the connecting hose is kept essentially constant by a gas flow varying with time during the fluidization.
Bidirectional trolley comprising a movable drawbar , a push handle , a loading and unloading plan , two front wheels and two rear wheels connected to the loading and unloading plan , a handling system comprising in turn a first toothed means connected by meshing to a second front wheel , and a second toothed means connected, again by meshing, to a second rear wheel , in which the first toothed means and the second toothed means are connected to each other by a connecting bar which allows the joint movement of the two toothed means as a result of the movement of the drawbar by means of the push handle by the user, said bidirectional trolley being characterized in that the drawbar comprises a folding metal ring which, once released, enters the working position and disengages a brake .
A powered aerosol generating device comprising a source of electrical power , at least one electrical resistance heating unit for forming a thermally generated aerosol that incorporates components of tobacco, a controller mechanism including a sensor that is capable of selectively powering the electrical resistance heating element at least during periods of draw, wherein the device comprises an outer housing and a cigarette positioned within the outer housing , wherein the cigarette comprises at least one form of tobacco and an aerosol-forming material employed in addition to the tobacco , the tobacco being wrapped in a paper wrapper , wherein the tobacco is present in the form of a reconstituted tobacco sheet, wherein at least a portion of the electrical resistance heating element is elongated, and at least a portion thereof extends downstream within the outer housing such that at least a portion of the resistance heating element can extend into the tobacco of the cigarette . wherein the device comprises an outer housing and a cigarette positioned within the outer housing , wherein the cigarette comprises at least one form of tobacco and an aerosol-forming material employed in addition to the tobacco , the tobacco being wrapped in a paper wrapper , wherein the tobacco is present in the form of a reconstituted tobacco sheet, wherein at least a portion of the electrical resistance heating element is elongated, and at least a portion thereof extends downstream within the outer housing such that at least a portion of the resistance heating element can extend into the tobacco of the cigarette .
A silicon carbide semiconductor device comprising a JFET, the JFET including: a semiconductor substrate including a first conductivity-type substrate made of silicon carbide, a drift layer of a first conductivity-type formed on the first conductivity-type substrate by epitaxial growth, a first gate region of a second conductivity-type formed on the drift layer by epitaxial growth, and a source region of the first conductivity-type formed on the first gate region by epitaxial growth or ion implantation; a trench penetrating the source region and the first gate region and reaching the drift layer , the trench having a strip shape whose longitudinal direction is set in one direction; a channel layer of the first conductivity-type formed on an inner wall of the trench by epitaxial growth; a second gate region of the second conductivity-type formed on the channel layer ; a first depressed portion formed at an outer edge portion of the substrate including a periphery of the end portion of the trench along said one direction, the first depressed portion being formed to a position deeper than a thickness of the source region and being formed by removing the source region and a portion of the channel layer , of the second gate region and of the first gate region from the outer edge portion of the substrate ; the silicon carbide semiconductor device being characterised in that it comprises a second conductivity-type layer only covering a corner portion at a boundary between a bottom surface and a side surface of the first depressed portion . a semiconductor substrate including a first conductivity-type substrate made of silicon carbide, a drift layer of a first conductivity-type formed on the first conductivity-type substrate by epitaxial growth, a first gate region of a second conductivity-type formed on the drift layer by epitaxial growth, and a source region of the first conductivity-type formed on the first gate region by epitaxial growth or ion implantation; a trench penetrating the source region and the first gate region and reaching the drift layer , the trench having a strip shape whose longitudinal direction is set in one direction; a channel layer of the first conductivity-type formed on an inner wall of the trench by epitaxial growth; a second gate region of the second conductivity-type formed on the channel layer ; a first depressed portion formed at an outer edge portion of the substrate including a periphery of the end portion of the trench along said one direction, the first depressed portion being formed to a position deeper than a thickness of the source region and being formed by removing the source region and a portion of the channel layer , of the second gate region and of the first gate region from the outer edge portion of the substrate ; the silicon carbide semiconductor device being characterised in that it comprises a second conductivity-type layer only covering a corner portion at a boundary between a bottom surface and a side surface of the first depressed portion .