An image sensor , comprising: a first substrate including a plurality of pixels and a plurality of vertical signal lines (VSL) and a plurality of first wiring layers at one side thereof; a second substrate including a plurality of second wiring layers at one side thereof, wherein the first and second substrates are secured together between the pluralities of first and second wiring layers facing each other; electrode pads provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers ; dummy pads provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers ; first vias connecting the one of the plurality of first wiring layers and the electrode pad provided on the first substrate ; second vias connecting the one of the plurality of second wiring layers and the electrode pad provided on the second substrate , wherein the electrode and dummy pads provided on the first substrate and the electrode and dummy pads provided on the second substrate are respectively connected to each other; third vias connecting the another of the plurality of first wiring layers ; and fourth vias connecting the another of the plurality of second wiring layers , wherein at least one of the third vias and the fourth vias connect the dummy pads and at least one of the another of the plurality of first and second wiring layers together, wherein the electrode pads provide for electrical connection between the one of the plurality of first wiring layers and the one of the plurality of second wiring layers and the electrode pads are electrically connected to one of the plurality of vertical signal lines (VSL), and wherein the dummy pads do not electrically connect to the plurality of vertical signal line (VSL); characterised in that the electrode and dummy pads are formed by breaking through a SiN film formed on the bonding surface of both substrates . a first substrate including a plurality of pixels and a plurality of vertical signal lines (VSL) and a plurality of first wiring layers at one side thereof; a second substrate including a plurality of second wiring layers at one side thereof, wherein the first and second substrates are secured together between the pluralities of first and second wiring layers facing each other; electrode pads provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers ; dummy pads provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers ; first vias connecting the one of the plurality of first wiring layers and the electrode pad provided on the first substrate ; second vias connecting the one of the plurality of second wiring layers and the electrode pad provided on the second substrate , wherein the electrode and dummy pads provided on the first substrate and the electrode and dummy pads provided on the second substrate are respectively connected to each other; third vias connecting the another of the plurality of first wiring layers ; and fourth vias connecting the another of the plurality of second wiring layers , wherein at least one of the third vias and the fourth vias connect the dummy pads and at least one of the another of the plurality of first and second wiring layers together, wherein the electrode pads provide for electrical connection between the one of the plurality of first wiring layers and the one of the plurality of second wiring layers and the electrode pads are electrically connected to one of the plurality of vertical signal lines (VSL), and wherein the dummy pads do not electrically connect to the plurality of vertical signal line (VSL); characterised in that the electrode and dummy pads are formed by breaking through a SiN film formed on the bonding surface of both substrates . <EOS>