A surface emitting laser (100; 200) comprising: an oscillator structure (104, 105, 106; 204, 205, 206; 304, 305, 306) including an active layer (105; 205; 305); semiconductor distribution Bragg reflectors (103, 107; 203, 207; 303, 307) each including plural pairs of a low refractive index layer (107a; 207a; 307a), a high refractive index layer (107b; 307b) and optional composition gradient layers interposed between each of the refractive index layers (107a, 107b; 207a, 207b; 307a, 307b), the semiconductor distribution Bragg reflectors sandwiching the oscillator structure; and a confined structure formed of a selectively-oxidized layer (108; 208; 308) including aluminum, wherein one of the low refractive index layers of one of the semiconductor distribution Bragg reflectors consists of the sequence of a second layer (107c; 207c; 307c), a first layer (107m; 207m; 307m) adjoining the second layer, the selectively-oxidized layer having one side adjoining the first layer, another first layer (107m; 207m; 307m) adjoining an opposite side of the selectively-oxidized layer, and another second layer (107c; 207c; 307c) adjoining the another first layer, wherein an Al content rate in the first layers is lower than an Al content rate in the selectively-oxidized layer and is greater than an Al content rate in the second layers, the Al content rate of the first layers being equal to or more than and equal to or less than 20% different from the Al content rate of the selectively-oxidized layer, wherein a total thickness of the selectively-oxidized layer and the first layers is equal to or less than 110 nm, and wherein an optical thickness of the one of the low refractive index layers and, if provided, one half of each of the composition gradient layers adjoining the one of the low refractive layers is (2n + 1) λ/4, where "λ" denotes an oscillation wavelength and "n" denotes an integer equal to or greater than 1. an oscillator structure (104, 105, 106; 204, 205, 206; 304, 305, 306) including an active layer (105; 205; 305); semiconductor distribution Bragg reflectors (103, 107; 203, 207; 303, 307) each including plural pairs of a low refractive index layer (107a; 207a; 307a), a high refractive index layer (107b; 307b) and optional composition gradient layers interposed between each of the refractive index layers (107a, 107b; 207a, 207b; 307a, 307b), the semiconductor distribution Bragg reflectors sandwiching the oscillator structure; and a confined structure formed of a selectively-oxidized layer (108; 208; 308) including aluminum, wherein one of the low refractive index layers of one of the semiconductor distribution Bragg reflectors consists of the sequence of a second layer (107c; 207c; 307c), a first layer (107m; 207m; 307m) adjoining the second layer, the selectively-oxidized layer having one side adjoining the first layer, another first layer (107m; 207m; 307m) adjoining an opposite side of the selectively-oxidized layer, and another second layer (107c; 207c; 307c) adjoining the another first layer, wherein an Al content rate in the first layers is lower than an Al content rate in the selectively-oxidized layer and is greater than an Al content rate in the second layers, the Al content rate of the first layers being equal to or more than and equal to or less than 20% different from the Al content rate of the selectively-oxidized layer, wherein a total thickness of the selectively-oxidized layer and the first layers is equal to or less than 110 nm, and wherein an optical thickness of the one of the low refractive index layers and, if provided, one half of each of the composition gradient layers adjoining the one of the low refractive layers is (2n + 1) λ/4, where "λ" denotes an oscillation wavelength and "n" denotes an integer equal to or greater than 1. <EOS>