An imaging apparatus comprising: a first structure and a second structure , wherein the first structure includes: a first substrate ; a plurality of temperature detection devices formed on the first substrate , arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices ; and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices , the second structure includes : a second substrate ; and a drive circuit provided on the second substrate and covered with a covering layer , the first substrate is bonded to the covering layer , a cavity is provided between each temperature detection device and the covering layer , and the drive lines and the signal lines are electrically connected to the drive circuit, wherein a partition wall is formed on a portion of the first substrate positioned between a temperature detection device and another temperature detection device , a bottom of the partition wall is bonded to the covering layer , characterized in that a sidewall of the partition wall includes at least one material layer selected from a group comprising an insulative material layer, a metal material layer, an alloy material layer, and a carbon material layer, for reflecting an incident infrared ray, and wherein the temperature detection devices include pn junction diodes or ceramic resistive devices. a first structure and a second structure , wherein the first structure includes: a first substrate ; a plurality of temperature detection devices formed on the first substrate , arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices ; and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices , a first substrate ; a plurality of temperature detection devices formed on the first substrate , arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices ; and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices , the second structure includes : a second substrate ; and a drive circuit provided on the second substrate and covered with a covering layer , the first substrate is bonded to the covering layer , a second substrate ; and a drive circuit provided on the second substrate and covered with a covering layer , the first substrate is bonded to the covering layer , a cavity is provided between each temperature detection device and the covering layer , and the drive lines and the signal lines are electrically connected to the drive circuit, wherein a partition wall is formed on a portion of the first substrate positioned between a temperature detection device and another temperature detection device , a bottom of the partition wall is bonded to the covering layer , characterized in that a sidewall of the partition wall includes at least one material layer selected from a group comprising an insulative material layer, a metal material layer, an alloy material layer, and a carbon material layer, for reflecting an incident infrared ray, and wherein the temperature detection devices include pn junction diodes or ceramic resistive devices. <EOS>