A light emitting diode comprising: a light emitting structure including a first conductivity type semiconductor layer , an active layer disposed on the first conductivity type semiconductor layer , and a second conductivity type semiconductor layer disposed on the active layer ; a transmissive conductivity layer disposed on the second conductivity type semiconductor layer ; a first electrode disposed on a portion of the first conductivity type semiconductor layer ; a second electrode disposed on the second conductivity type semiconductor layer , and an insulating layer disposed on the first electrode , the first conductivity type semiconductor layer , the active layer and a portion of the second conductivity type semiconductor layer between the first electrode and the second electrode , the insulating layer having a DBR structure, wherein the light emitting structure includes a first mesa region, and the first conductivity type semiconductor layer includes a second mesa region, wherein the first electrode is disposed on a portion of the upper surface and the side surface of the first conductivity type semiconductor layer that forms the second mesa region, and extends outward from a side surface of the first conductivity type semiconductor layer , an extended portion of the first conductivity type semiconductor layer includes a first surface and a second surface, the first surface of the first conductivity type semiconductor layer being in contact with the insulating layer disposed thereon and the second surface of the first conductivity type semiconductor layer being opposite the first surface and being exposed, wherein the first electrode and the insulation layer contact different portions of the upper surface of the first conductivity type semiconductor layer , and wherein the second electrode directly contacts an upper surface of the transmissive conductivity layer and an upper surface of the insulation layer at the first mesa region. a light emitting structure including a first conductivity type semiconductor layer , an active layer disposed on the first conductivity type semiconductor layer , and a second conductivity type semiconductor layer disposed on the active layer ; a transmissive conductivity layer disposed on the second conductivity type semiconductor layer ; a first electrode disposed on a portion of the first conductivity type semiconductor layer ; a second electrode disposed on the second conductivity type semiconductor layer , and an insulating layer disposed on the first electrode , the first conductivity type semiconductor layer , the active layer and a portion of the second conductivity type semiconductor layer between the first electrode and the second electrode , the insulating layer having a DBR structure, wherein the light emitting structure includes a first mesa region, and the first conductivity type semiconductor layer includes a second mesa region, wherein the first electrode is disposed on a portion of the upper surface and the side surface of the first conductivity type semiconductor layer that forms the second mesa region, and extends outward from a side surface of the first conductivity type semiconductor layer , an extended portion of the first conductivity type semiconductor layer includes a first surface and a second surface, the first surface of the first conductivity type semiconductor layer being in contact with the insulating layer disposed thereon and the second surface of the first conductivity type semiconductor layer being opposite the first surface and being exposed, wherein the first electrode and the insulation layer contact different portions of the upper surface of the first conductivity type semiconductor layer , and wherein the second electrode directly contacts an upper surface of the transmissive conductivity layer and an upper surface of the insulation layer at the first mesa region. <EOS>