A method of manufacturing a semiconductor chip for measuring a magnetic field, the method comprising: - manufacturing at least one target device comprising an electronic circuit using a first technology and a first material on a first wafer, - manufacturing at least one source device comprising a magnetic sensing element using a second technology and a second material on a second wafer, the second technology being different from the first technology, and the second material being different from the first material, whereby the second material is chosen such that the carrier mobility is higher in the second material than in the first material at room temperature, and whereby the at least one source device is provided with pads smaller than 10 μm for applying a conductive distribution layer ; - transferring the at least one source device to the at least one target device, by executing the following steps at least once: - covering at least one landing area of the target device with an adhesive layer, on which landing area the source device is to be mounted; - lifting-off the at least one source device from the second wafer by a conformable transfer element; - positioning the at least one source device onto the at least one landing area of the target device; - lifting-off the conformable transfer element from the positioned at least one source device; - connecting the at least one source device electrically to the target device by applying the conductive distribution layer . - manufacturing at least one target device comprising an electronic circuit using a first technology and a first material on a first wafer, - manufacturing at least one source device comprising a magnetic sensing element using a second technology and a second material on a second wafer, the second technology being different from the first technology, and the second material being different from the first material, whereby the second material is chosen such that the carrier mobility is higher in the second material than in the first material at room temperature, and whereby the at least one source device is provided with pads smaller than 10 μm for applying a conductive distribution layer ; - transferring the at least one source device to the at least one target device, by executing the following steps at least once: - covering at least one landing area of the target device with an adhesive layer, on which landing area the source device is to be mounted; - lifting-off the at least one source device from the second wafer by a conformable transfer element; - positioning the at least one source device onto the at least one landing area of the target device; - lifting-off the conformable transfer element from the positioned at least one source device; - covering at least one landing area of the target device with an adhesive layer, on which landing area the source device is to be mounted; - lifting-off the at least one source device from the second wafer by a conformable transfer element; - positioning the at least one source device onto the at least one landing area of the target device; - lifting-off the conformable transfer element from the positioned at least one source device; - connecting the at least one source device electrically to the target device by applying the conductive distribution layer . <EOS>