Light barrier with a semiconductor component , the semiconductor component having: - a carrier , - at least two semiconductor chips applied on a top side of the carrier and detecting electromagnetic radiation, - at least one semi-conductor chip emitting electromagnetic radiation, attached to the top side of the carrier , and - at least two directionally selective elements attached to the top side of the carrier , delimiting an angular portion of the radiation, which can be received by the detecting semiconductor chips , wherein main beam axes (V) of the receivable radiation are each tilted with respect to a main beam axis (U) of the radiation to be emitted, wherein - the directionally selective elements are each formed by a barrier of a material, which is impermeable to the electromagnetic radiation to be detected, emitted by the emitting semiconductor chip , - the barriers are each spaced apart from the associated detecting semi-conductor chip , - the barriers are shaped in such a way that with perpendicular parallel projection of the barriers and of the detecting semiconductor chips on the top side of the carrier , the projected area of the barriers and the projected area of the detecting semiconductor chips overlap at least partially, such that a radiation shadow forms with radiation hitting perpendicularly on the top side , covering the detecting semiconductor chips at least partially, - the barriers are each located between the emitting semiconductor chip and the associated detecting semiconductor chip , and - a dummy portion is located between sensitive regions (G), in which the semiconductor chips detecting electromagnetic radiation are sensitive, and from which none of the detecting semiconductor chips receive the electromagnetic radiation emitted by the emitting semiconductor chip , if an object to be detected is located directly above the emitting semiconductor chip . - a carrier , - at least two semiconductor chips applied on a top side of the carrier and detecting electromagnetic radiation, - at least one semi-conductor chip emitting electromagnetic radiation, attached to the top side of the carrier , and - at least two directionally selective elements attached to the top side of the carrier , delimiting an angular portion of the radiation, which can be received by the detecting semiconductor chips , wherein main beam axes (V) of the receivable radiation are each tilted with respect to a main beam axis (U) of the radiation to be emitted, wherein - the directionally selective elements are each formed by a barrier of a material, which is impermeable to the electromagnetic radiation to be detected, emitted by the emitting semiconductor chip , - the barriers are each spaced apart from the associated detecting semi-conductor chip , - the barriers are shaped in such a way that with perpendicular parallel projection of the barriers and of the detecting semiconductor chips on the top side of the carrier , the projected area of the barriers and the projected area of the detecting semiconductor chips overlap at least partially, such that a radiation shadow forms with radiation hitting perpendicularly on the top side , covering the detecting semiconductor chips at least partially, - the barriers are each located between the emitting semiconductor chip and the associated detecting semiconductor chip , and - a dummy portion is located between sensitive regions (G), in which the semiconductor chips detecting electromagnetic radiation are sensitive, and from which none of the detecting semiconductor chips receive the electromagnetic radiation emitted by the emitting semiconductor chip , if an object to be detected is located directly above the emitting semiconductor chip . <EOS>