Method of producing at least one singulated semiconductor element (10', 10", 10"') with a substrate adapter (35', 35", 35"') comprising the steps: - structuring of an electrically conductive metal element , - application of a first contacting material on a first side of a semiconductor element , wherein the semiconductor element is arranged with a second side on a transport element , - positioning of the structured metal element and the semiconductor element in such a way that a first side of the structured metal element and the first side of the semiconductor element provided with the first contacting material are arranged opposite each other, and - joining of the structured metal element with the semiconductor element provided with the first contacting material , - singulation of the semiconductor element and the structured metal element joined together with the semiconductor element and the contacting material for further processing in such a way that the transport element fixes the substrate adapter (35', 35", 35"') formed by the singulated metal elements (12', 12", 12"') and the first contacting material at a distance from one another, - wherein at least one singulated semiconductor element (10', 10", 10"'), with the substrate adapter (35', 35", 35"') located on it, is removed from the transport element and mounted on a support provided with a second contacting material , wherein the second side of the singulated semiconductor element (10', 10", 10"') is brought into contact with the support provided with the second contacting material , wherein the singulated semiconductor element (10', 10", 10"') is then detached from the support and the second contacting material remains adhered to the singulated semiconductor element (10', 10", 10"'), wherein the transport element and the carrier is a foil, wherein the adhesion between the transport element and the singulated semiconductor element (10', 10", 10"') is less than the adhesion of a connection between the singulated semiconductor element (10', 10", 10"') and the first contacting material and between the first contacting material and the singulated metal element (12', 12", 12"'), wherein further, the adhesion between the support and the second contacting material is less that the adhesion of a connection between the singulated semiconductor element (10', 10", 10"') and the second contacting material and a connection between the first contacting material and the singulated metal element (12', 12", 12"'). - structuring of an electrically conductive metal element , - application of a first contacting material on a first side of a semiconductor element , wherein the semiconductor element is arranged with a second side on a transport element , - positioning of the structured metal element and the semiconductor element in such a way that a first side of the structured metal element and the first side of the semiconductor element provided with the first contacting material are arranged opposite each other, and - joining of the structured metal element with the semiconductor element provided with the first contacting material , - singulation of the semiconductor element and the structured metal element joined together with the semiconductor element and the contacting material for further processing in such a way that the transport element fixes the substrate adapter (35', 35", 35"') formed by the singulated metal elements (12', 12", 12"') and the first contacting material at a distance from one another, - wherein at least one singulated semiconductor element (10', 10", 10"'), with the substrate adapter (35', 35", 35"') located on it, is removed from the transport element and mounted on a support provided with a second contacting material , wherein the second side of the singulated semiconductor element (10', 10", 10"') is brought into contact with the support provided with the second contacting material , <EOS>