A solar cell comprising: a semiconductor substrate ; a tunneling layer formed on one surface of the semiconductor substrate; a conductive area including an emitter area and a back field area formed on the tunneling layer ; a passivation film formed on the conductive area , the passivation film having a plurality of contact holes ; a protective oxide film for preventing a deterioration of passivation property on the conductive area inside the plurality of contact holes , the protective oxide film being formed over at least one of at least a portion of an inner side surface of each of the plurality of contact holes and the passivation film ; and a plurality of electrodes having a plurality of first electrodes and a plurality of second electrodes , and electrically connected to the conductive area through the plurality of contact holes with the protective oxide film interposed therebetween; wherein the plurality of contact holes has a plurality of first contact holes located in the emitter area for connecting the emitter area and the first electrode with each other, and a plurality of second contact holes located in the back field area for connecting the back field area and the second electrode with each other; wherein the passivation film includes a multi-layer including a first layer disposed on the conductive area and a second layer disposed on the first layer and including a material different from that of the first layer ; wherein each of the plurality of contact holes includes a first contact hole region formed in the first layer and a second contact hole region formed in the second layer , the second contact hole region communicating with the first contact hole region , and wherein the first contact hole region includes a region having a larger size than the second contact hole region . a semiconductor substrate ; a tunneling layer formed on one surface of the semiconductor substrate; a conductive area including an emitter area and a back field area formed on the tunneling layer ; a passivation film formed on the conductive area , the passivation film having a plurality of contact holes ; a protective oxide film for preventing a deterioration of passivation property on the conductive area inside the plurality of contact holes , the protective oxide film being formed over at least one of at least a portion of an inner side surface of each of the plurality of contact holes and the passivation film ; and a plurality of electrodes having a plurality of first electrodes and a plurality of second electrodes , and electrically connected to the conductive area through the plurality of contact holes with the protective oxide film interposed therebetween; wherein the plurality of contact holes has a plurality of first contact holes located in the emitter area for connecting the emitter area and the first electrode with each other, and a plurality of second contact holes located in the back field area for connecting the back field area and the second electrode with each other; wherein the passivation film includes a multi-layer including a first layer disposed on the conductive area and a second layer disposed on the first layer and including a material different from that of the first layer ; wherein each of the plurality of contact holes includes a first contact hole region formed in the first layer and a second contact hole region formed in the second layer , the second contact hole region communicating with the first contact hole region , and wherein the first contact hole region includes a region having a larger size than the second contact hole region . <EOS>