A composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereon, said composition comprising: 1 to 30 wt percent of an oxidizing agent; 45 to 98 wt percent of solvent; 50 ppm to 15 wt percent of an etchant agent; 10 ppm to 3 wt percent of an ammonium salt; 0.01 ppm to 3 wt percent of a metal corrosion inhibitor; 0.1 ppm to 2 wt percent of an oxidizing stabilizer/chelator; and optionally 0 to 1 wt percent of a fluoride source; wherein the composition has a pH ranging from 5.5 to 14; wherein the oxidizing agent comprises hydrogen peroxide; wherein the solvent is water; wherein the etchant agent is selected from tetraethylammonium hydroxide (TEAH), choline hydroxide, tetramethylammonium hydroxide (TMAH), trimethylphenylammonium hydroxide (TMPAH), tetrabutylammonium hydroxide (TBAH), ethyltrimethylammonium hydroxide, ammonium hydroxide, 1,8-diazabicyclo(5.4.0)undec-7-ene, 1-(2-aminoethyl)piperazine, and combinations thereof; wherein the ammonium salt is selected from ammonium citrate tribasic, ammonium acetate, tetraammonium EDTA, ethylenediaminetetraacetic acid diammonium salt, ammonium chloride, ammonium bromide, and combinations thereof; wherein the oxidizing stabilizer /chelator is selected from ethylenediaminetetraacetic acid (EDTA), N-2-bis(carboxymethyl)aminoethyl-N-(2-hydroxy ethyl)glycine (HEDTA), gluconic acid, and combinations thereof; and wherein the fluoride source is selected from H 2 ZrF 6 , H 2 TiF 6 , HPF 6 , HF, ammonium fluoride, tetrafluoroboric acid, hexafluorosilicic acid, tetrabutylammonium tetrafluoroborate (TBA-BF4), ammonium hexafluorosilicate, ammonium hexafluorotitanate, ammonium bifluoride (NH 4 HF 2 ), and tetramethylammonium fluoride (TMAF), and combinations thereof; characterized in that the metal corrosion inhibitor is selected from the group consisting of theophylline and sorbitol and combinations thereof. 1 to 30 wt percent of an oxidizing agent; 45 to 98 wt percent of solvent; 50 ppm to 15 wt percent of an etchant agent; 10 ppm to 3 wt percent of an ammonium salt; 0.01 ppm to 3 wt percent of a metal corrosion inhibitor; 0.1 ppm to 2 wt percent of an oxidizing stabilizer/chelator; and optionally 0 to 1 wt percent of a fluoride source; wherein the composition has a pH ranging from 5.5 to 14; wherein the oxidizing agent comprises hydrogen peroxide; wherein the solvent is water; wherein the etchant agent is selected from tetraethylammonium hydroxide (TEAH), choline hydroxide, tetramethylammonium hydroxide (TMAH), trimethylphenylammonium hydroxide (TMPAH), tetrabutylammonium hydroxide (TBAH), ethyltrimethylammonium hydroxide, ammonium hydroxide, 1,8-diazabicyclo(5.4.0)undec-7-ene, 1-(2-aminoethyl)piperazine, and combinations thereof; wherein the ammonium salt is selected from ammonium citrate tribasic, ammonium acetate, tetraammonium EDTA, ethylenediaminetetraacetic acid diammonium salt, ammonium chloride, ammonium bromide, and combinations thereof; wherein the oxidizing stabilizer /chelator is selected from ethylenediaminetetraacetic acid (EDTA), N-2-bis(carboxymethyl)aminoethyl-N-(2-hydroxy ethyl)glycine (HEDTA), gluconic acid, and combinations thereof; and wherein the fluoride source is selected from H 2 ZrF 6 , H 2 TiF 6 , HPF 6 , HF, ammonium fluoride, tetrafluoroboric acid, hexafluorosilicic acid, tetrabutylammonium tetrafluoroborate (TBA-BF4), ammonium hexafluorosilicate, ammonium hexafluorotitanate, ammonium bifluoride (NH 4 HF 2 ), and tetramethylammonium fluoride (TMAF), and combinations thereof; characterized in that the metal corrosion inhibitor is selected from the group consisting of theophylline and sorbitol and combinations thereof. <EOS>