A display panel comprising: a base substrate ; a plurality of electroluminescent elements on the base substrate , each of the plurality of electroluminescent elements comprising a light emitting layer and a transparent electrode layer on a light exit side of the light emitting layer ; and a first optical coupling layer on the side of the transparent electrode layer away from the light emitting layer , and being coupled to at least a part of the transparent electrode layer , wherein the first optical coupling layer is conductive, characterized in that the display panel further comprising: a second optical coupling layer on a side of the first optical coupling layer away from the transparent electrode layer , and a refractive index of the second optical coupling layer is smaller than a refractive index of the first optical coupling layer , wherein, the second optical coupling layer is a semiconductor layer comprising a second n-type doping material or a second p-type doping material, and in a cross-sectional view an orthographic projection of the first optical coupling layer on the base substrate falls into an orthographic projection of the second optical coupling layer on the base substrate , and the second optical coupling layer is in contact with a part of the transparent electrode layer which is not covered by the first optical coupling layer . a base substrate ; a plurality of electroluminescent elements on the base substrate , each of the plurality of electroluminescent elements comprising a light emitting layer and a transparent electrode layer on a light exit side of the light emitting layer ; and a first optical coupling layer on the side of the transparent electrode layer away from the light emitting layer , and being coupled to at least a part of the transparent electrode layer , wherein the first optical coupling layer is conductive, characterized in that the display panel further comprising: a second optical coupling layer on a side of the first optical coupling layer away from the transparent electrode layer , and a refractive index of the second optical coupling layer is smaller than a refractive index of the first optical coupling layer , wherein, the second optical coupling layer is a semiconductor layer comprising a second n-type doping material or a second p-type doping material, and in a cross-sectional view an orthographic projection of the first optical coupling layer on the base substrate falls into an orthographic projection of the second optical coupling layer on the base substrate , and the second optical coupling layer is in contact with a part of the transparent electrode layer which is not covered by the first optical coupling layer . a second optical coupling layer on a side of the first optical coupling layer away from the transparent electrode layer , and a refractive index of the second optical coupling layer is smaller than a refractive index of the first optical coupling layer , wherein, the second optical coupling layer is a semiconductor layer comprising a second n-type doping material or a second p-type doping material, and in a cross-sectional view an orthographic projection of the first optical coupling layer on the base substrate falls into an orthographic projection of the second optical coupling layer on the base substrate , and the second optical coupling layer is in contact with a part of the transparent electrode layer which is not covered by the first optical coupling layer . <EOS>