An apparatus, comprising: a substrate defined with a first area and a second area; a low-temperature-poly-silicon layer provided in the first area; a first insulation layer provided on the low-temperature-poly-silicon layer in the first area; a metal oxide layer provided in the first area and the second area, the metal oxide layer in the first area being provided on the first insulation layer ; a second insulation layer provided in the first area and the second area, at least some portion of the second insulation layer on the metal oxide layer in the second area is thinner than other portions of the second insulation layer on the metal oxide layer in the second area; a plurality of contact holes exposing source/drain regions of the low-temperature-poly-silicon layer in the first area and source/drain regions of the metal oxide layer in the second area; a first metal layer providing a plurality of electrodes in the first area and the second area, the first metal layer in the first area including source/drain electrodes in contact with the exposed source/drain regions of the low-temperature-poly-silicon layer, and the first metal layer in the second area including source/drain electrodes in contact with the exposed source/drain regions of the metal oxide layer and a gate electrode insulated from the metal oxide layer by the thinner portion of the second insulation layer ; a third insulation layer covering the first metal layer in the first area and the second area; and a second metal layer being in contact with at least one of the source/drain electrodes in the first area and the second area via a contact hole through the third insulation layer between the first metal layer and the second metal layer . a substrate defined with a first area and a second area; a low-temperature-poly-silicon layer provided in the first area; a first insulation layer provided on the low-temperature-poly-silicon layer in the first area; a metal oxide layer provided in the first area and the second area, the metal oxide layer in the first area being provided on the first insulation layer ; a second insulation layer provided in the first area and the second area, at least some portion of the second insulation layer on the metal oxide layer in the second area is thinner than other portions of the second insulation layer on the metal oxide layer in the second area; a plurality of contact holes exposing source/drain regions of the low-temperature-poly-silicon layer in the first area and source/drain regions of the metal oxide layer in the second area; a first metal layer providing a plurality of electrodes in the first area and the second area, the first metal layer in the first area including source/drain electrodes in contact with the exposed source/drain regions of the low-temperature-poly-silicon layer, and the first metal layer in the second area including source/drain electrodes in contact with the exposed source/drain regions of the metal oxide layer and a gate electrode insulated from the metal oxide layer by the thinner portion of the second insulation layer ; a third insulation layer covering the first metal layer in the first area and the second area; and a second metal layer being in contact with at least one of the source/drain electrodes in the first area and the second area via a contact hole through the third insulation layer between the first metal layer and the second metal layer . <EOS>