A method for manufacturing a super-junction MOSFET comprising: forming a first trench in a semiconductor layer of a substrate ; forming a first oxide layer over the semiconductor layer and in the first trench, wherein the first oxide layer is along a first bottom and first sidewalls of the first trench; depositing an electrically conductive material in the first trench to form a first shield electrode ; removing a first portion of the electrically conductive material from the first trench, wherein a first part of the first oxide layer on the first sidewalls of the first trench is exposed from the electrically conductive material when the first portion of the electrically conductive material is removed; removing the first part of the first oxide layer from the first sidewalls of the first trench, the removing the first part of the first oxide layer additionally removing another part of the first oxide layer adjacent to first shield sidewalls of the first shield electrode to produce first openings along a first top part of the first shield sidewalls; forming a second oxide layer over and in contact with the first shield electrode, the second oxide layer filling the first openings, wherein the forming the second oxide layer comprises applying the second oxide layer to a depth great enough to entirely fill the first openings; removing a second part of the second oxide layer to expose a first top surface of the first shield electrode; forming a gate dielectric over the first top surface of the first shield electrode; and depositing additional electrically conductive material over the gate dielectric in the first trench to form a gate electrode of the MOSFET. forming a first trench in a semiconductor layer of a substrate ; forming a first oxide layer over the semiconductor layer and in the first trench, wherein the first oxide layer is along a first bottom and first sidewalls of the first trench; depositing an electrically conductive material in the first trench to form a first shield electrode ; removing a first portion of the electrically conductive material from the first trench, wherein a first part of the first oxide layer on the first sidewalls of the first trench is exposed from the electrically conductive material when the first portion of the electrically conductive material is removed; removing the first part of the first oxide layer from the first sidewalls of the first trench, the removing the first part of the first oxide layer additionally removing another part of the first oxide layer adjacent to first shield sidewalls of the first shield electrode to produce first openings along a first top part of the first shield sidewalls; forming a second oxide layer over and in contact with the first shield electrode, the second oxide layer filling the first openings, wherein the forming the second oxide layer comprises applying the second oxide layer to a depth great enough to entirely fill the first openings; removing a second part of the second oxide layer to expose a first top surface of the first shield electrode; forming a gate dielectric over the first top surface of the first shield electrode; and depositing additional electrically conductive material over the gate dielectric in the first trench to form a gate electrode of the MOSFET. <EOS>