A solar cell, comprising: a substrate ; a tunneling dielectric layer disposed over a first surface of the substrate and a doped conductive layer disposed on a surface of the tunneling dielectric layer away from the first surface of the substrate, wherein the doped conductive layer comprises a plurality of main body portions arranged at intervals; a plurality of first electrodes arranged at intervals, each of the plurality of first electrodes extending in a first direction (X), wherein each first electrode is disposed on a side of a corresponding main body portion facing away from the substrate and is electrically connected to the corresponding main body portion; at least one transmission layer , wherein each transmission layer of the at least one transmission layer is disposed between a corresponding pair of adjacent main body portions of the plurality of main body portions and is in contact with a side surface of each of the corresponding pair of the adjacent main body portions, wherein the at least one transmission layer and the doped conductive layer include a same material; and at least one diffusion region , wherein the at least one diffusion region and the at least one transmission layer are doped with doping ions of a same type, wherein each diffusion region of the at least one diffusion region is partially located in a corresponding transmission layer and extends into the tunneling dielectric layer and the substrate, wherein a doping ion concentration of the each diffusion region is greater than a doping ion concentration of the substrate and greater than a doping ion concentration of the corresponding transmission layer; wherein the at least one transmission layer is configured to provide a lateral transmission channel between two adjacent main body portions for majority carriers and to improve transmission efficiency of the carriers transported between the substrate and the doped conductive layer. a substrate ; a tunneling dielectric layer disposed over a first surface of the substrate and a doped conductive layer disposed on a surface of the tunneling dielectric layer away from the first surface of the substrate, wherein the doped conductive layer comprises a plurality of main body portions arranged at intervals; a plurality of first electrodes arranged at intervals, each of the plurality of first electrodes extending in a first direction (X), wherein each first electrode is disposed on a side of a corresponding main body portion facing away from the substrate and is electrically connected to the corresponding main body portion; at least one transmission layer , wherein each transmission layer of the at least one transmission layer is disposed between a corresponding pair of adjacent main body portions of the plurality of main body portions and is in contact with a side surface of each of the corresponding pair of the adjacent main body portions, wherein the at least one transmission layer and the doped conductive layer include a same material; and at least one diffusion region , wherein the at least one diffusion region and the at least one transmission layer are doped with doping ions of a same type, wherein each diffusion region of the at least one diffusion region is partially located in a corresponding transmission layer and extends into the tunneling dielectric layer and the substrate, wherein a doping ion concentration of the each diffusion region is greater than a doping ion concentration of the substrate and greater than a doping ion concentration of the corresponding transmission layer; wherein the at least one transmission layer is configured to provide a lateral transmission channel between two adjacent main body portions for majority carriers and to improve transmission efficiency of the carriers transported between the substrate and the doped conductive layer. <EOS>