A standard cell circuit , comprising: a first high aspect ratio voltage rail extending along a first longitudinal axis perpendicular to the vertical axis in a first direction, the first high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height (H2) and a respective width (W2) of the first high aspect ratio voltage rail greater than 1.0 and configured to receive a first supply voltage; a second high aspect ratio voltage rail extending along a second longitudinal axis perpendicular to the vertical axis in the first direction substantially parallel to the first high aspect ratio voltage rail , the second high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height (H2) and a respective width (W2) of the second high aspect ratio voltage rail greater than 1.0; and a circuit device electrically coupled to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail , wherein a voltage differential between the first high aspect ratio voltage rail and the second high aspect ratio voltage rail provides power to the circuit device , wherein: the respective widths (W2) of the first high aspect ratio voltage rail and the second high aspect ratio voltage rail are of any value in a range between a critical dimension of a process technology of the standard cell circuit and three times the critical dimension, the critical dimension of the process technology being a smallest width in which a metal line is fabricated in the process technology; and the first high aspect ratio voltage rail and the second high aspect ratio voltage rail both consist of a metal with a higher resistivity than copper; characterized in that : the respective heights (H2) of the first high aspect ratio voltage rail and the second high aspect ratio voltage rail are such that the first high aspect ratio voltage rail and the second high aspect ratio voltage rail extend from a lower level of a first via layer (V-1) up through a first metal layer (M0) and a second via level (V0) to an upper level of a second metal layer (M1). a first high aspect ratio voltage rail extending along a first longitudinal axis perpendicular to the vertical axis in a first direction, the first high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height (H2) and a respective width (W2) of the first high aspect ratio voltage rail greater than 1.0 and configured to receive a first supply voltage; a second high aspect ratio voltage rail extending along a second longitudinal axis perpendicular to the vertical axis in the first direction substantially parallel to the first high aspect ratio voltage rail , the second high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height (H2) and a respective width (W2) of the second high aspect ratio voltage rail greater than 1.0; and a circuit device electrically coupled to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail , wherein a voltage differential between the first high aspect ratio voltage rail and the second high aspect ratio voltage rail provides power to the circuit device , wherein: the respective widths (W2) of the first high aspect ratio voltage rail and the second high aspect ratio voltage rail are of any value in a range between a critical dimension of a process technology of the standard cell circuit and three times the critical dimension, the critical dimension of the process technology being a smallest width in which a metal line is fabricated in the process technology; and the first high aspect ratio voltage rail and the second high aspect ratio voltage rail both consist of a metal with a higher resistivity than copper; <EOS>