A solid-state image sensor including a pixel array in which a plurality of pixels are arrayed in a matrix having a plurality of rows and a plurality of columns, said pixel array comprising: a plurality of first pixels, each first pixel comprising a first photoelectric conversion portion and a second photoelectric conversion portion in said first pixel (3BL-B/3BL-A) among the plurality of pixels; a plurality of second pixels, each second pixel comprising a third photoelectric conversion portion and a fourth photoelectric conversion portion in said second pixel (3GR-B/3GR-A), said plurality of first and second pixels being alternately arranged in the same column of the pixel array; a first wiring layer (M1) including first column signal lines which correspond to said column of the pixel array; a second wiring layer (M2), arranged above the first wiring layer, including second column signal lines which correspond to said column of the pixel array; and a plurality of microlenses , each microlens respectively corresponding to both the first photoelectric conversion portion and the second photoelectric conversion portion of a respective first pixel and to both the third photoelectric conversion portion and the fourth photoelectric conversion portion of a respective second pixel, said microlenses being configured to guide incident light to the first and second photoelectric conversion portions and to the third and fourth photoelectric conversion portions, respectively, wherein the first column signal lines include at least two column signal lines for outputting each of signals from the first photoelectric conversion portion and the second photoelectric conversion portion of each of the plurality of first pixels (3BL-B, 3BL-A), and the second column signal lines include at least two column signal lines for outputting each of signals from the third photoelectric conversion portion and the fourth photoelectric conversion portion of each of the plurality of second pixels (3GR-B, 3GR-A). a plurality of first pixels, each first pixel comprising a first photoelectric conversion portion and a second photoelectric conversion portion in said first pixel (3BL-B/3BL-A) among the plurality of pixels; a plurality of second pixels, each second pixel comprising a third photoelectric conversion portion and a fourth photoelectric conversion portion in said second pixel (3GR-B/3GR-A), said plurality of first and second pixels being alternately arranged in the same column of the pixel array; a first wiring layer (M1) including first column signal lines which correspond to said column of the pixel array; a second wiring layer (M2), arranged above the first wiring layer, including second column signal lines which correspond to said column of the pixel array; and a plurality of microlenses , each microlens respectively corresponding to both the first photoelectric conversion portion and the second photoelectric conversion portion of a respective first pixel and to both the third photoelectric conversion portion and the fourth photoelectric conversion portion of a respective second pixel, said microlenses being configured to guide incident light to the first and second photoelectric conversion portions and to the third and fourth photoelectric conversion portions, respectively, wherein the first column signal lines include at least two column signal lines for outputting each of signals from the first photoelectric conversion portion and the second photoelectric conversion portion of each of the plurality of first pixels (3BL-B, 3BL-A), and the second column signal lines include at least two column signal lines for outputting each of signals from the third photoelectric conversion portion and the fourth photoelectric conversion portion of each of the plurality of second pixels (3GR-B, 3GR-A). <EOS>