A method for producing an optoelectronic semiconductor device comprising at least the following steps: - Providing a carrier arrangement comprising a carrier body , an electrically insulating intermediate layer arranged on an outer surface of the carrier body and a utility layer arranged on an outer surface of the intermediate layer facing away from the carrier body ; - Inserting of at least two openings arranged at a distance from one another in the lateral direction (L) into the utility layer via an outer surface of the utility layer facing away from the carrier body , wherein the openings extend completely through the utility layer in the vertical direction (V) and each opening comprises a bottom surface which is formed completely by the intermediate layer ; - Electrically insulating side surfaces of the openings and the outer surface of the utility layer facing away from the carrier body ; - Arranging electrically conductive material at least in places in the openings , characterized in that - after completion of the optoelectronic semiconductor component , the electrically conductive material comprises at least one interruption (U) in its course along the outer surface of the utility layer in the lateral direction (L) between adjacent openings , - Arranging at least one optoelectronic semiconductor body on the outer surface of the utility layer , the optoelectronic semiconductor body comprising at least one active zone suitable for generating or detecting electromagnetic radiation, and being electrically conductively connected to the electrically conductive material , and - Forming at least one protective diode structure in the utility layer , the protective diode structure being electrically connected to the semiconductor body . - Providing a carrier arrangement comprising a carrier body , an electrically insulating intermediate layer arranged on an outer surface of the carrier body and a utility layer arranged on an outer surface of the intermediate layer facing away from the carrier body ; - Inserting of at least two openings arranged at a distance from one another in the lateral direction (L) into the utility layer via an outer surface of the utility layer facing away from the carrier body , wherein the openings extend completely through the utility layer in the vertical direction (V) and each opening comprises a bottom surface which is formed completely by the intermediate layer ; - Electrically insulating side surfaces of the openings and the outer surface of the utility layer facing away from the carrier body ; - Arranging electrically conductive material at least in places in the openings , characterized in that - after completion of the optoelectronic semiconductor component , the electrically conductive material comprises at least one interruption (U) in its course along the outer surface of the utility layer in the lateral direction (L) between adjacent openings , - Arranging at least one optoelectronic semiconductor body on the outer surface of the utility layer , the optoelectronic semiconductor body comprising at least one active zone suitable for generating or detecting electromagnetic radiation, and being electrically conductively connected to the electrically conductive material , and - Forming at least one protective diode structure in the utility layer , the protective diode structure being electrically connected to the semiconductor body . <EOS>