A semiconductor laser diode comprising: a semiconductor body having a n-region and a p-region spaced apart within the semiconductor body; an active region between the n-region and the p-region having a front end and a back end , wherein the active region comprises a flared portion near the front end ; a first metallisation layer adjacent the n-region and having a first injector disposed thereon for injecting current into the active region; a second metallisation layer opposite to the first metallisation layer and adjacent the p-region and having a second injector disposed thereon for injecting current into the active region, wherein the width of the second metallisation layer is larger than the width of the active region, wherein the second metallisation layer comprises a first layer and a second layer covering the first layer near the back end of the active region , the second layer being thicker than the first layer , so that the flared portion of the active region near the front end is covered by the second metallisation layer having a reduced thickness corresponding to the thickness of the first layer , compared to the thickness of the second metallisation layer in other parts of the active region, wherein the first layer has reduced width over the flared portion of the active region near the front end compared to other parts of the active region, and wherein said reduced thickness and width of the second metallisation layer reduce the current injection in the flared part of the active region near the front end of the active region compared to the current injection in the other parts of the active region. a semiconductor body having a n-region and a p-region spaced apart within the semiconductor body; an active region between the n-region and the p-region having a front end and a back end , wherein the active region comprises a flared portion near the front end ; a first metallisation layer adjacent the n-region and having a first injector disposed thereon for injecting current into the active region; a second metallisation layer opposite to the first metallisation layer and adjacent the p-region and having a second injector disposed thereon for injecting current into the active region, wherein the width of the second metallisation layer is larger than the width of the active region, wherein the second metallisation layer comprises a first layer and a second layer covering the first layer near the back end of the active region , the second layer being thicker than the first layer , so that the flared portion of the active region near the front end is covered by the second metallisation layer having a reduced thickness corresponding to the thickness of the first layer , compared to the thickness of the second metallisation layer in other parts of the active region, wherein the first layer has reduced width over the flared portion of the active region near the front end compared to other parts of the active region, and wherein said reduced thickness and width of the second metallisation layer reduce the current injection in the flared part of the active region near the front end of the active region compared to the current injection in the other parts of the active region. <EOS>