Method for fabrication of a semiconducting structure intended to be connected by hybridisation to a second support , the method for fabrication including the following steps: - supply a first support that comprises a substrate and at least one active layer , said active layer comprising at least one nitrided semiconducting material, at least one active region of said semiconducting structure and at least one first and one second connection zone of said active region flush with a surface of the first support being arranged in said active layer , - formation of at least one first and one second insert body in electrical contact with the first and second connection zones respectively, said formation step comprising formation of a nickel layer covering a portion of the surface of the first support , said nickel layer being arranged on the support surface at the active region , at least partially covering the first and second connection zones, - localised physico-chemical etching of the active layer , the localisation of the etching being provided by protecting part of the active layer comprising the active region by the nickel layer , - physico-chemical etching of the nickel layer , the etching being stopped after the release of at least part of the surface of the first support of said nickel layer , the part of the surface of the first support including the surface of the first support outside the first and second connection zones, a remaining portion of the nickel layer and each of the first and second insert bodies being used for formation of a first and a second insert , - release of the active layer from the first substrate , said release enabling formation of the semiconducting structure . - supply a first support that comprises a substrate and at least one active layer , said active layer comprising at least one nitrided semiconducting material, at least one active region of said semiconducting structure and at least one first and one second connection zone of said active region flush with a surface of the first support being arranged in said active layer , - formation of at least one first and one second insert body in electrical contact with the first and second connection zones respectively, said formation step comprising formation of a nickel layer covering a portion of the surface of the first support , said nickel layer being arranged on the support surface at the active region , at least partially covering the first and second connection zones, - localised physico-chemical etching of the active layer , the localisation of the etching being provided by protecting part of the active layer comprising the active region by the nickel layer , - physico-chemical etching of the nickel layer , the etching being stopped after the release of at least part of the surface of the first support of said nickel layer , the part of the surface of the first support including the surface of the first support outside the first and second connection zones, a remaining portion of the nickel layer and each of the first and second insert bodies being used for formation of a first and a second insert , - release of the active layer from the first substrate , said release enabling formation of the semiconducting structure . <EOS>