A solid state transducer system comprising: a support substrate ; a solid state emitter carried by the support substrate , the solid state emitter comprising a first semiconductor component , a second semiconductor component , and an active region between the first and second semiconductor components; and a state device carried by the support substrate and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device comprising: a portion of an epitaxial growth substrate ; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter , wherein the separate material has a composition different than that of the first semiconductor component , the second semiconductor component and the active region ; and an insulator deposited on a lateral sidewall of the electrostatic discharge device , wherein the state device and the solid state emitter are stacked along a common axis; wherein the solid state transducer system further comprises: a contact electrically coupled to both the second semiconductor component and the epitaxial growth substrate , wherein the contact extends over and is in contact with the second semiconductor component , and is disposed on the epitaxial growth substrate of the electrostatic discharge device and on the insulator , and wherein the contact is formed from a transparent material. a support substrate ; a solid state emitter carried by the support substrate , the solid state emitter comprising a first semiconductor component , a second semiconductor component , and an active region between the first and second semiconductor components; and a state device carried by the support substrate and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device comprising: a portion of an epitaxial growth substrate ; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter , wherein the separate material has a composition different than that of the first semiconductor component , the second semiconductor component and the active region ; and an insulator deposited on a lateral sidewall of the electrostatic discharge device , a portion of an epitaxial growth substrate ; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter , wherein the separate material has a composition different than that of the first semiconductor component , the second semiconductor component and the active region ; and an insulator deposited on a lateral sidewall of the electrostatic discharge device , wherein the state device and the solid state emitter are stacked along a common axis; wherein the solid state transducer system further comprises: a contact electrically coupled to both the second semiconductor component and the epitaxial growth substrate , wherein the contact extends over and is in contact with the second semiconductor component , and is disposed on the epitaxial growth substrate of the electrostatic discharge device and on the insulator , and wherein the contact is formed from a transparent material. <EOS>