A method for manufacturing a photoresist structure, performed by a processing device, and comprising: forming (S101, S201) a first photoresist layer on a substrate , and performing (S101, S201) first baking; forming (S102, S202) a second photoresist layer on the first photoresist layer after the first baking, and performing (S102, S202) second baking; performing (S103, S203) under exposure to the second photoresist layer after the second baking, whereby an exposure time for the photoresist layer is less than a time required for the photoresist layer to fully react, and performing (S103, S203) third baking; developing and fixing (S 104, S204) the second photoresist layer after the third baking to determine a partially patterned second photoresist layer , the partially patterned second photoresist layer comprising a first opening, the first opening corresponding to an exposure area or a light-shielding area of the under exposure, the first opening comprising a first part and a second part located on a side of the first part close to the substrate , an aperture of the first part being smaller than an aperture of the second part , and an orthographic projection of the first part on the substrate is within an orthographic projection of the second part on the substrate ; flood exposing (S105, S205) the partially patterned second photoresist layer , whereby the partially patterned second photoresist layer is fully exposed to fully react; and performing (S105, S205) fourth baking to determine a patterned second photoresist layer ; and etching (S106, S206) the first photoresist layer using the patterned second photoresist layer as a mask to determine a patterned first photoresist layer . forming (S101, S201) a first photoresist layer on a substrate , and performing (S101, S201) first baking; forming (S102, S202) a second photoresist layer on the first photoresist layer after the first baking, and performing (S102, S202) second baking; performing (S103, S203) under exposure to the second photoresist layer after the second baking, whereby an exposure time for the photoresist layer is less than a time required for the photoresist layer to fully react, and performing (S103, S203) third baking; developing and fixing (S 104, S204) the second photoresist layer after the third baking to determine a partially patterned second photoresist layer , the partially patterned second photoresist layer comprising a first opening, the first opening corresponding to an exposure area or a light-shielding area of the under exposure, the first opening comprising a first part and a second part located on a side of the first part close to the substrate , an aperture of the first part being smaller than an aperture of the second part , and an orthographic projection of the first part on the substrate is within an orthographic projection of the second part on the substrate ; flood exposing (S105, S205) the partially patterned second photoresist layer , whereby the partially patterned second photoresist layer is fully exposed to fully react; and performing (S105, S205) fourth baking to determine a patterned second photoresist layer ; and etching (S106, S206) the first photoresist layer using the patterned second photoresist layer as a mask to determine a patterned first photoresist layer . <EOS>