A temperature compensation circuit comprising: a bias reference circuit , wherein the bias reference circuit comprises a first transistor device and a second transistor device connected in series, each transistor device comprising a bipolar junction transistor, BJT (QA, QB), wherein for each of the serially connected transistor devices , a respective resistor (R1, R2) is connected between a base terminal of the BJT (QA, QB) and a collector terminal of the BJT (QA, QB), and wherein the bias reference circuit further comprises a controller configured to control the resistance value of one or more of the resistors based on an operating temperature of a temperature compensated amplifier circuit comprising the temperature compensation circuit and an amplifier ; and wherein the BITs (QA, QB) are serially connected between an output of a temperature biased current source and a terminal having a fixed voltage, wherein the collector terminal of the BJT (QA) of the first transistor device of the serially connected transistor devices is coupled to the output of the temperature biased current source , an emitter terminal of the BJT (QA) of the first transistor device is connected to the collector terminal of the BJT (QB) of the second transistor device of the two serially connected transistor devices, an emitter terminal of the BJT (QB) of the second transistor device is connected to the terminal having the fixed voltage, wherein the temperature compensation circuit further comprises a driver transistor device connected to the bias reference circuit and configured to generate a drive current for the amplifier based on the resistance value of the resistors, wherein the driver transistor device has a base terminal connected to the collector terminal of the BJT (QA) of the first transistor device , a collector terminal connected to a supply voltage terminal (VCC) and an emitter terminal coupled to a base terminal of a transistor (QD) included in the amplifier . a bias reference circuit , wherein the bias reference circuit comprises a first transistor device and a second transistor device connected in series, each transistor device comprising a bipolar junction transistor, BJT (QA, QB), wherein for each of the serially connected transistor devices , a respective resistor (R1, R2) is connected between a base terminal of the BJT (QA, QB) and a collector terminal of the BJT (QA, QB), and wherein the bias reference circuit further comprises a controller configured to control the resistance value of one or more of the resistors based on an operating temperature of a temperature compensated amplifier circuit comprising the temperature compensation circuit and an amplifier ; and wherein the BITs (QA, QB) are serially connected between an output of a temperature biased current source and a terminal having a fixed voltage, wherein the collector terminal of the BJT (QA) of the first transistor device of the serially connected transistor devices is coupled to the output of the temperature biased current source , an emitter terminal of the BJT (QA) of the first transistor device is connected to the collector terminal of the BJT (QB) of the second transistor device of the two serially connected transistor devices, an emitter terminal of the BJT (QB) of the second transistor device is connected to the terminal having the fixed voltage, wherein the temperature compensation circuit further comprises a driver transistor device connected to the bias reference circuit and configured to generate a drive current for the amplifier based on the resistance value of the resistors, wherein the driver transistor device has a base terminal connected to the collector terminal of the BJT (QA) of the first transistor device , a collector terminal connected to a supply voltage terminal (VCC) and an emitter terminal coupled to a base terminal of a transistor (QD) included in the amplifier . <EOS>