A superconducting logic element , comprising: - a superconducting tunnel junction comprising a first superconductor layer and a second superconductor layer ; - a first insulating ferromagnet layer in direct contact with said first superconductor layer , configured to generate by magnetic proximity effect a predetermined density of spin-split states in said first superconductor layer ; - a second insulating ferromagnet layer in direct contact with said second superconductor layer , configured to generate by magnetic proximity effect a predetermined density of spin-split states in said second superconductor layer ; - a writing current supply , configured to apply a writing current to a superconductor layer in direct contact with one of said first or second insulating ferromagnet layer , so that said first insulating ferromagnet layer in direct contact with said first superconductor layer and said second insulating ferromagnet layer in direct contact with said second superconductor layer commute between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other by the magnetic field generated by the applied writing current ; - a reading element configured to provide a reading voltage bias between said first and said second superconductor layers and to provide a measurement signal of a dissipative high- or low-conductance state through said superconducting tunnel junction, respectively, responsive to said parallel or antiparallel magnetization, by absolute spin valve effect, wherein - said superconducting tunnel junction consists of said first superconductor layer , said second superconductor layer and a further insulating layer , said further insulating layer being arranged with tunnel barrier function between said first superconductor layer and said second superconductor layer and being selected from the group consisting of: AlOx, AlN. - a superconducting tunnel junction comprising a first superconductor layer and a second superconductor layer ; - a first insulating ferromagnet layer in direct contact with said first superconductor layer , configured to generate by magnetic proximity effect a predetermined density of spin-split states in said first superconductor layer ; - a second insulating ferromagnet layer in direct contact with said second superconductor layer , configured to generate by magnetic proximity effect a predetermined density of spin-split states in said second superconductor layer ; - a writing current supply , configured to apply a writing current to a superconductor layer in direct contact with one of said first or second insulating ferromagnet layer , so that said first insulating ferromagnet layer in direct contact with said first superconductor layer and said second insulating ferromagnet layer in direct contact with said second superconductor layer commute between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other by the magnetic field generated by the applied writing current ; - a reading element configured to provide a reading voltage bias between said first and said second superconductor layers and to provide a measurement signal of a dissipative high- or low-conductance state through said superconducting tunnel junction, respectively, responsive to said parallel or antiparallel magnetization, by absolute spin valve effect, wherein - said superconducting tunnel junction consists of said first superconductor layer , said second superconductor layer and a further insulating layer , said further insulating layer being arranged with tunnel barrier function between said first superconductor layer and said second superconductor layer and being selected from the group consisting of: AlOx, AlN. <EOS>