A superconducting integrated circuit structure, comprising: a first wiring layer that comprises an electrically conductive material and which resides in a first plane, the first wiring layer comprising a first mark , the first mark having a first set of nominal dimensions and a first resistance specified at least in part by the first set of nominal dimensions; a second wiring layer that comprises an electrically conductive material and which resides in a second plane which at least partially overlies the first plane, the second wiring layer comprising a second mark , the second mark having second set of nominal dimensions and a second resistance specified at least in part by the second set of nominal dimensions, the second mark having a nominal position along at least one coordinate axis with respect to the first mark ; a first stud via that comprises an electrically conductive material and which resides in between the first and the second planes, the first stud via having a third set of nominal dimensions and a third resistance specified at least in part by the third set of nominal dimensions, the first stud via which provides a signal path between the first mark and the second mark , the second mark which overlaps the stud via in a first resistive overlap region defined by an orthogonal projection of the second mark on the stud via , the first resistance overlap region having a resistance that is larger than a cumulative resistance of the first mark , the second mark and the stud via at least at temperatures above a critical temperature; and characterized in that the first mark , the second mark and the stud via form a first vernier for measuring interlayer misalignment. a first wiring layer that comprises an electrically conductive material and which resides in a first plane, the first wiring layer comprising a first mark , the first mark having a first set of nominal dimensions and a first resistance specified at least in part by the first set of nominal dimensions; a second wiring layer that comprises an electrically conductive material and which resides in a second plane which at least partially overlies the first plane, the second wiring layer comprising a second mark , the second mark having second set of nominal dimensions and a second resistance specified at least in part by the second set of nominal dimensions, the second mark having a nominal position along at least one coordinate axis with respect to the first mark ; a first stud via that comprises an electrically conductive material and which resides in between the first and the second planes, the first stud via having a third set of nominal dimensions and a third resistance specified at least in part by the third set of nominal dimensions, the first stud via which provides a signal path between the first mark and the second mark , the second mark which overlaps the stud via in a first resistive overlap region defined by an orthogonal projection of the second mark on the stud via , the first resistance overlap region having a resistance that is larger than a cumulative resistance of the first mark , the second mark and the stud via at least at temperatures above a critical temperature; and characterized in that the first mark , the second mark and the stud via form a first vernier for measuring interlayer misalignment. <EOS>