mhurhangee/patent-ind-claim-en huggingface dataset:
Transport trolley for a demountable bed , said bed comprising a frame , a bed base comprising two sections assembled to one another in a removable manner, and a system for adjusting the height position of the bed base with respect to the frame, the transport trolley comprising a base structure mounted to pivot with respect to the frame from a use position of the bed wherein the frame is positioned parallel to the base structure , into a storage position of the bed wherein the frame is positioned at right angles to the base structure , characterised in that said transport trolley comprises at least one pair of pins arranged transversely on the base structure , the pins of the at least one pair of pins being positioned at right angles on the base structure , at least one of the sections of the bed base comprising, at one of the ends thereof, means for receiving the two pins positioned at right angles on the base structure so as to keep said section of the bed base connected at right angles to the base structure , parallel to the frame in the storage position, the base structure comprises means for adjusting the spacing between the two pins of the at least one pair of pins , so as to move said two pins apart into at least two connecting positions connecting to one of the two sections of the bed base , said at least two connecting positions being adapted to at least two widths of bed bases .
A method for temporary workpiece bonding , comprising: performing a combining step , wherein an adhesive layer is formed on a surface of at least one substrate and/or at least one workpiece ; performing a bonding step , wherein the at least one substrate and the at least one workpiece are bonded by the adhesive layer , wherein one substrate may be bonded to one workpiece, or a plurality of substrates may be bonded to one workpiece, or one substrate may be bonded to a plurality of workpieces; performing a processing step , wherein the at least one workpiece is processed; and performing a debonding step , wherein the adhesive layer is irradiated with a laser so as to separate the at least one workpiece from the at least one substrate ; wherein the adhesive layer is formed by an adhesive , wherein the adhesive comprises a polymer and a light absorbing material, the content of the polymer in the solid content of the adhesive is in the range of 50 wt% to 98 wt%, the content of the light absorbing material in the solid content of the adhesive is in the range of 2 wt% to 50 wt%, the polymer is polyimide or a copolymer of amic acid/imide, the light absorbing material is carbon black, titanium black, iron oxide, titanium nitride, an organic pigment or a dye, the content of a hydroxyl-containing unit of the skeleton of the polymer is in the range of 5 wt% to 45 wt%, the content of an aliphatic ether-containing unit of the skeleton of the polymer is in the range of 5 wt% to 40 wt%, and the cyclization ratio of the polymer is greater than or equal to 90%. performing a combining step , wherein an adhesive layer is formed on a surface of at least one substrate and/or at least one workpiece ; performing a bonding step , wherein the at least one substrate and the at least one workpiece are bonded by the adhesive layer , wherein one substrate may be bonded to one workpiece, or a plurality of substrates may be bonded to one workpiece, or one substrate may be bonded to a plurality of workpieces; performing a processing step , wherein the at least one workpiece is processed; and performing a debonding step , wherein the adhesive layer is irradiated with a laser so as to separate the at least one workpiece from the at least one substrate ; wherein the adhesive layer is formed by an adhesive , wherein the adhesive comprises a polymer and a light absorbing material, the content of the polymer in the solid content of the adhesive is in the range of 50 wt% to 98 wt%, the content of the light absorbing material in the solid content of the adhesive is in the range of 2 wt% to 50 wt%, the polymer is polyimide or a copolymer of amic acid/imide, the light absorbing material is carbon black, titanium black, iron oxide, titanium nitride, an organic pigment or a dye, the content of a hydroxyl-containing unit of the skeleton of the polymer is in the range of 5 wt% to 45 wt%, the content of an aliphatic ether-containing unit of the skeleton of the polymer is in the range of 5 wt% to 40 wt%, and the cyclization ratio of the polymer is greater than or equal to 90%.
A method for producing a security element having light-scattering structures, characterized by the following method steps: a) producing a master having structures with randomized sub-structures, wherein the structures consist of lens-like structures made of a photoresist, which are smaller than 1 μm and are disposed in randomized form over an area, wherein the randomization is based on a regular lattice, wherein each point of the lattice is offset from its position in a regular lattice by a random amount and a random angle, wherein the lens-like structures are produced with the aid of laser-based lithography or electron beam lithography at the randomized positions by means of point exposures, wherein by means of random variation of an exposure dose also a size, in particular diameter and height, of the lens-like structures is randomized; b) producing an embossing tool with randomized structures; c) molding the randomized structures of the embossing tool in a surface of a thermoplastic or photosensitive layer; d) if appropriate, further method steps for applying further functional layers or tailoring. a) producing a master having structures with randomized sub-structures, wherein the structures consist of lens-like structures made of a photoresist, which are smaller than 1 μm and are disposed in randomized form over an area, wherein the randomization is based on a regular lattice, wherein each point of the lattice is offset from its position in a regular lattice by a random amount and a random angle, wherein the lens-like structures are produced with the aid of laser-based lithography or electron beam lithography at the randomized positions by means of point exposures, wherein by means of random variation of an exposure dose also a size, in particular diameter and height, of the lens-like structures is randomized; b) producing an embossing tool with randomized structures; c) molding the randomized structures of the embossing tool in a surface of a thermoplastic or photosensitive layer; d) if appropriate, further method steps for applying further functional layers or tailoring.
A method for fabricating a semiconductor structure, comprising: providing a base substrate, including a substrate and a plurality of discrete fins on the substrate , wherein the substrate includes a pull-up transistor region (I) and a pull-down transistor (II) region adjacent to the pull-up transistor region (I); forming a gate structure , across a length portion of each fin , covering top and sidewall surfaces of each fin , and on each fin ; forming pull-up doped epitaxial layers , in the fin on both sides of the gate structure in the pull-up transistor region (I); forming a first pull-down doped region , in the fin on one side of the gate structure in the pull-down transistor region (II), wherein the first pull-down doped region is connected to an adjacent pull-up doped epitaxial layer ; characterised by forming a second pull-down doped region (J), in the fin on another side of the gate structure in the pull-down transistor region (II), wherein an epitaxial layer is not formed when forming the second pull-down doped region (J), and an ion doping process is directly performed on the fin . providing a base substrate, including a substrate and a plurality of discrete fins on the substrate , wherein the substrate includes a pull-up transistor region (I) and a pull-down transistor (II) region adjacent to the pull-up transistor region (I); forming a gate structure , across a length portion of each fin , covering top and sidewall surfaces of each fin , and on each fin ; forming pull-up doped epitaxial layers , in the fin on both sides of the gate structure in the pull-up transistor region (I); forming a first pull-down doped region , in the fin on one side of the gate structure in the pull-down transistor region (II), wherein the first pull-down doped region is connected to an adjacent pull-up doped epitaxial layer ; characterised by forming a second pull-down doped region (J), in the fin on another side of the gate structure in the pull-down transistor region (II), wherein an epitaxial layer is not formed when forming the second pull-down doped region (J), and an ion doping process is directly performed on the fin .
A method of making a mobile originated, MO, call using a user equipment which is a dual SIM dual active, DSDA, terminal in an isolated E-UTRAN operations for public safety, IOPS, dual PLMN mode of operation, the method comprising: the user equipment registering on both a first PLMN using a first smartcard and a second PLMN using a second smartcard, wherein the first PLMN is connected to an EPC and the second PLMN is isolated from the macro EPC; and the user equipment making a first communication attempt by dialing an MO call via the first PLMN and making a second communication attempt by dialing the MO call via the second PLMN at a same time; after determining that the MO call can be conducted in one of the first communication attempt and the second communication attempt, the user equipment terminating an other one of the first communication attempt and the second communication attempt; and the user equipment displaying a connection failure message after determining that the MO call cannot be conducted via the primary PLMN and the secondary PLMN. the user equipment registering on both a first PLMN using a first smartcard and a second PLMN using a second smartcard, wherein the first PLMN is connected to an EPC and the second PLMN is isolated from the macro EPC; and the user equipment making a first communication attempt by dialing an MO call via the first PLMN and making a second communication attempt by dialing the MO call via the second PLMN at a same time; after determining that the MO call can be conducted in one of the first communication attempt and the second communication attempt, the user equipment terminating an other one of the first communication attempt and the second communication attempt; and the user equipment displaying a connection failure message after determining that the MO call cannot be conducted via the primary PLMN and the secondary PLMN.
A resistive random access memory comprising first and second resistive memory devices (108, 114; 536, 538) configured as a memory cell and a cross coupled read circuit coupled with the first and second resistive memory devices (108, 114; 536, 538) for reading conductive state values thereof, wherein a one bit value is stored when the first and second resistive memory devices (108, 114; 536, 538) are programmed for different conductive state values, wherein sources of first and second transistors are coupled with respective ones of the first and second resistive memory devices , wherein the sources are degenerated by the connected first and second resistive memory devices and wherein first and second parasitic capacitors are coupled between the drains of the first and second transistors and a reference potential; and a diode connected transistor coupled to the first and second transistors and configured for biasing said first and second transistors and sinking a reference current; wherein the resistive random access memory is configured to pre-charge the first and second parasitic capacitors and subsequently discharge the first and second parasitic capacitors through the first and second transistors wherein due to the different conductive states the capacitors are discharged with different slopes which is detected by the cross coupled read circuit.
A high-order damping circuit (104, HODC1), configured to compensate for in-band gain degradation of an amplifier circuit that comprises an input-stage amplifier (102_1), at least one intermediate-stage amplifier (102_2), and an output-stage amplifier (102_3) cascaded between an input port and an output port of the amplifier circuit, the high-order damping circuit comprising: a first-stage high-pass filter (C d , R B ), having an input port coupled to an output port of the input-stage amplifier (102_1) or an output port of one of the at least one intermediate-stage amplifiers (102_2); a second-stage high-pass filter , having an input port coupled to an output port of the first-stage high-pass filter; and an auxiliary amplifier , having an input port coupled to an output port of the second-stage high-pass filter , and an output port coupled to the input port of the first-stage high-pass filter (C d , R B ), wherein the high-order damping circuit is arranged to cause the amplifier circuit to have a dominant pole at a frequency that is above the audio band. a first-stage high-pass filter (C d , R B ), having an input port coupled to an output port of the input-stage amplifier (102_1) or an output port of one of the at least one intermediate-stage amplifiers (102_2); a second-stage high-pass filter , having an input port coupled to an output port of the first-stage high-pass filter; and an auxiliary amplifier , having an input port coupled to an output port of the second-stage high-pass filter , and an output port coupled to the input port of the first-stage high-pass filter (C d , R B ), wherein the high-order damping circuit is arranged to cause the amplifier circuit to have a dominant pole at a frequency that is above the audio band.
An anti-fogging coated transparent article, comprising a transparent article and an anti-fog film formed on the transparent article, wherein the anti-fog film is a single-layer film containing a water-absorbent resin, a hydrophobic group, and a metal oxide component, the water-absorbent resin is polyvinyl acetal, the content of the water-absorbent resin in the anti-fog film is 50 mass% or more and 95 mass% or less, the hydrophobic group is a chain or cyclic alkyl group having 3 to 30 carbon atoms, and the hydrophobic group is bonded directly to a metal atom of the metal oxide component. the anti-fog film is a single-layer film containing a water-absorbent resin, a hydrophobic group, and a metal oxide component, the water-absorbent resin is polyvinyl acetal, the content of the water-absorbent resin in the anti-fog film is 50 mass% or more and 95 mass% or less, the hydrophobic group is a chain or cyclic alkyl group having 3 to 30 carbon atoms, and the hydrophobic group is bonded directly to a metal atom of the metal oxide component.
A method for producing a tubular semi-finished product for a scaffold of an implant, wherein the semi-finished product consists of a magnesium alloy, said method having the following steps: a) extruding the tubular semi-finished product by means of a heated die , b) introducing into the material of the semi-finished product exiting from the die a tensile stress by means of a tube drawing device , which has a clamping device , wherein the clamping device is fixed on a predefined portion of the tubular semi-finished product and the tensile force generated by the tube drawing device transfers to the semi-finished product , characterised in that the temperature applied to the material of the semi-finished product heated in the die is between 240 °C and 290 °C. a) extruding the tubular semi-finished product by means of a heated die , b) introducing into the material of the semi-finished product exiting from the die a tensile stress by means of a tube drawing device , which has a clamping device , wherein the clamping device is fixed on a predefined portion of the tubular semi-finished product and the tensile force generated by the tube drawing device transfers to the semi-finished product , characterised in that the temperature applied to the material of the semi-finished product heated in the die is between 240 °C and 290 °C.
A shell-and-plate heat exchanger comprising: a shell forming an internal space ; and a plate stack housed in the internal space of the shell and including a plurality of heat transfer plates stacked and joined together, wherein the plurality of heat transfer plates include first plates and second plates having different shapes, wherein the first plates and the second plates are alternately stacked to form the plate stack , the shell-and-plate heat exchanger allowing a refrigerant that has flowed into the internal space of the shell to be condensed, wherein a refrigerant channel that communicates with the internal space of the shell and allows the refrigerant to flow through and a heating medium channel that is blocked from the internal space of the shell and allows a heating medium to flow through are alternately arranged between adjacent plates of the plurality of heat transfer plates , characterized in that a meandering portion configured to meander the refrigerant condensed on a surface of each of the plurality of heat transfer plates is provided in at least a lower portion of the plate stack . a shell forming an internal space ; and a plate stack housed in the internal space of the shell and including a plurality of heat transfer plates stacked and joined together, wherein the plurality of heat transfer plates include first plates and second plates having different shapes, wherein the first plates and the second plates are alternately stacked to form the plate stack , the shell-and-plate heat exchanger allowing a refrigerant that has flowed into the internal space of the shell to be condensed, wherein a refrigerant channel that communicates with the internal space of the shell and allows the refrigerant to flow through and a heating medium channel that is blocked from the internal space of the shell and allows a heating medium to flow through are alternately arranged between adjacent plates of the plurality of heat transfer plates , characterized in that a meandering portion configured to meander the refrigerant condensed on a surface of each of the plurality of heat transfer plates is provided in at least a lower portion of the plate stack .
A method for operating a local computing device that has network connectivity to a service operated by a remote service provider , comprising: configuring the computing device to operate in a trusted execution environment, TEE ; counting (420; 1130; 1210) operations that are associated with the service; encrypting (425; 830; 1135; 1215) the operation count using asymmetric cryptography to create a secure count (405; 815; 1035; 1120); reporting (430; 835; 1140; 1220) the secure count to the service provider over a network whereby the secure count is operable to provide proof of work to the service provider, wherein the proof of work indicates that the computing device connection to the service is authorized, and wherein the count reporting is hardware-enforced by cryptographic processes in the context of the TEE; enabling (445; 1225) performance of operations (225, 230; 310; 550, 560; 704, 706; 804, 806; 904, 906; 1025, 1040; 1122, 1124) associated with the service on the computing device when the reported secure count is within a predetermined limit; and disabling (450; 1230) performance of operations associated with the service on the computing device when the reported secure count is outside the predetermined limit, wherein the operations are disabled by operations of a watchdog (505; 740, 745) on the computing device. configuring the computing device to operate in a trusted execution environment, TEE ; counting (420; 1130; 1210) operations that are associated with the service; encrypting (425; 830; 1135; 1215) the operation count using asymmetric cryptography to create a secure count (405; 815; 1035; 1120); reporting (430; 835; 1140; 1220) the secure count to the service provider over a network whereby the secure count is operable to provide proof of work to the service provider, wherein the proof of work indicates that the computing device connection to the service is authorized, and wherein the count reporting is hardware-enforced by cryptographic processes in the context of the TEE; enabling (445; 1225) performance of operations (225, 230; 310; 550, 560; 704, 706; 804, 806; 904, 906; 1025, 1040; 1122, 1124) associated with the service on the computing device when the reported secure count is within a predetermined limit; and disabling (450; 1230) performance of operations associated with the service on the computing device when the reported secure count is outside the predetermined limit, wherein the operations are disabled by operations of a watchdog (505; 740, 745) on the computing device.
A method of preserving a system firmware image on a computer , comprising: identifying that system firmware on the computer is to be updated with a new image; identifying an original image of the system firmware using a baseboard management controller, BMC, of the computer ; establishing a network connection to a remote storage system through a network interface of the computer using the BMC ; and sending by the BMC the original image through the network connection to the remote storage system using a distributed file system protocol. identifying that system firmware on the computer is to be updated with a new image; identifying an original image of the system firmware using a baseboard management controller, BMC, of the computer ; establishing a network connection to a remote storage system through a network interface of the computer using the BMC ; and sending by the BMC the original image through the network connection to the remote storage system using a distributed file system protocol.
An emulsion polymerization process comprising (a) adding a reactive mixture to a reaction vessel, said reactive mixture comprising water, one or more emulsifiers, butyl acrylate, and an allyl methacrylate crosslinker having a free radical reactivity ratio of less than 1, (b) providing conditions in which said reactive mixture undergoes emulsion polymerization to form a crosslinked core comprising from 98 to 99.9 wt% units derived from butyl acrylate and from 0.1 to 2 wt% units derived from allyl methacrylate crosslinker having a glass transition temperature, Tg, of less than or equal to 10 °C and wherein the allyl methacrylate crosslinker is in an amount sufficient such that the crosslinked core has a swell ratio between 8 and 15 in THF and forming a polymer having an original ratio of units derived from the allyl methacrylate crosslinker to units derived from the butyl acrylate; and (c) feeding additional allyl methacrylate crosslinker during polymerization in an amount sufficient to maintain the original ratio of allyl methacrylate crosslinker to butyl acrylate.