A device for monitoring the connections of semiconductors (S1, S2, SN) of a power module (PM), the semiconductors being connected in parallel and providing voltage and current to a load according to a pulse width modulation, the device comprising, for each semiconductor, a driver 5D1, D2, DN) for driving the gate of the semiconductor in order to set the semiconductor in a conducting state or non-conducting state at each cycle of the pulse width modulation, characterized in that the semiconductors are grouped in plural groups comprising at least one semiconductor and in that the device comprises: - means (300, S701) for determining if the duration of the conducting state of the semiconductors in a first cycle of the pulse width modulation is upper than a predetermined duration, - means (300, S702) for measuring, during the conducting state of the semiconductors at a second cycle of the pulse width modulation, the voltage provided to the load by the semiconductors if the duration of the conducting state of the semiconductors in the first cycle of the pulse width modulation is upper than the predetermined value, - means (300, S708) for sequentially disabling the conduction of each group of at least one semiconductor during a part of the duration of the conducting state of the semiconductors in a third cycle of the pulse width modulation and for measuring the voltage provided to the load each time the conduction of one group of at least one semiconductor is disabled, - means (300, S710) for determining the differences between the voltage measured during the second cycle and each voltage measured during the third cycle, - means (300, S714) for ordering the differences according to the values of the differences, - means (300, S715) for checking if the determined order is identical to an order stored in a memory of the device, - means (300, S717) for determining that the connection of one semiconductor of one group of at least one semiconductor is deteriorated if the determined order is different from the order stored in the memory of the device. - means (300, S701) for determining if the duration of the conducting state of the semiconductors in a first cycle of the pulse width modulation is upper than a predetermined duration, - means (300, S702) for measuring, during the conducting state of the semiconductors at a second cycle of the pulse width modulation, the voltage provided to the load by the semiconductors if the duration of the conducting state of the semiconductors in the first cycle of the pulse width modulation is upper than the predetermined value, - means (300, S708) for sequentially disabling the conduction of each group of at least one semiconductor during a part of the duration of the conducting state of the semiconductors in a third cycle of the pulse width modulation and for measuring the voltage provided to the load each time the conduction of one group of at least one semiconductor is disabled, - means (300, S710) for determining the differences between the voltage measured during the second cycle and each voltage measured during the third cycle, - means (300, S714) for ordering the differences according to the values of the differences, - means (300, S715) for checking if the determined order is identical to an order stored in a memory of the device, - means (300, S717) for determining that the connection of one semiconductor of one group of at least one semiconductor is deteriorated if the determined order is different from the order stored in the memory of the device. <EOS>