A soft error inspection method for a semiconductor device, comprising: setting (S102) an irradiation condition of a laser beam or an electron beam including a dosage rate or a dosage; irradiating (S104) a semiconductor device with the laser beam or the electron beam under the irradiation condition for a predetermined time; and measuring (S106), from a start of the irradiation with the laser beam or the electron beam until the predetermined time elapses, a temporal change of bit information corresponding to a position of the semiconductor device in which the laser beam or the electron beam is irradiated and storing the measured temporal change as time-series data of the bit information in a storage unit ; Z wherein the method is characterized by further comprising: Z creating (S112) a temporal change map of the bit information in three dimensions using the time-series data in the storage unit ; creating (S114), using the temporal change map, an endurance time map by calculating an endurance time at the position of the bit information by multiplying a time for inversion of the bit information from the start of the irradiation with the laser beam or the electron beam by a predetermined acceleration factor; and determining (S116) whether the semiconductor device satisfies a predetermined condition, using the endurance time map, to identify whether the semiconductor device is defective. setting (S102) an irradiation condition of a laser beam or an electron beam including a dosage rate or a dosage; irradiating (S104) a semiconductor device with the laser beam or the electron beam under the irradiation condition for a predetermined time; and measuring (S106), from a start of the irradiation with the laser beam or the electron beam until the predetermined time elapses, a temporal change of bit information corresponding to a position of the semiconductor device in which the laser beam or the electron beam is irradiated and storing the measured temporal change as time-series data of the bit information in a storage unit ; Z wherein the method is characterized by further comprising: Z creating (S112) a temporal change map of the bit information in three dimensions using the time-series data in the storage unit ; creating (S114), using the temporal change map, an endurance time map by calculating an endurance time at the position of the bit information by multiplying a time for inversion of the bit information from the start of the irradiation with the laser beam or the electron beam by a predetermined acceleration factor; and determining (S116) whether the semiconductor device satisfies a predetermined condition, using the endurance time map, to identify whether the semiconductor device is defective. creating (S112) a temporal change map of the bit information in three dimensions using the time-series data in the storage unit ; creating (S114), using the temporal change map, an endurance time map by calculating an endurance time at the position of the bit information by multiplying a time for inversion of the bit information from the start of the irradiation with the laser beam or the electron beam by a predetermined acceleration factor; and determining (S116) whether the semiconductor device satisfies a predetermined condition, using the endurance time map, to identify whether the semiconductor device is defective. <EOS>