A method of implanting an implant species into a substrate at different depths, the method comprising: forming an implant mask over the substrate, the implant mask including a first implant zone (310_1) designed as an opening having a first lateral dimension, and a second implant zone (310_2) designed as a block array; and implanting the implant species through the implant mask under an implant angle tilted against a block plane which is perpendicular to the first lateral dimension, whereby the implant species is located by the implant process at a first implant area formed by the implant species at a first depth (D1) in the substrate beneath the first implant zone, the implant species is located by the implant process at a second implant area formed by the implant species at a second depth (D2) in the substrate beneath the second implant zone, wherein the first depth is greater than the second depth and the implant angle is chosen such that the implant species has in the second implant zone to pass through less implant mask material than in non-structured regions of the implant mask, wherein a bulk thickness of the block array and a thickness of the implant mask in non-structured regions is the same. forming an implant mask over the substrate, the implant mask including a first implant zone (310_1) designed as an opening having a first lateral dimension, and a second implant zone (310_2) designed as a block array; and a first implant zone (310_1) designed as an opening having a first lateral dimension, and a second implant zone (310_2) designed as a block array; implanting the implant species through the implant mask under an implant angle tilted against a block plane which is perpendicular to the first lateral dimension, whereby the implant species is located by the implant process at a first implant area formed by the implant species at a first depth (D1) in the substrate beneath the first implant zone, the implant species is located by the implant process at a second implant area formed by the implant species at a second depth (D2) in the substrate beneath the second implant zone, wherein the first depth is greater than the second depth and the implant angle is chosen such that the implant species has in the second implant zone to pass through less implant mask material than in non-structured regions of the implant mask, wherein a bulk thickness of the block array and a thickness of the implant mask in non-structured regions is the same. the implant species is located by the implant process at a first implant area formed by the implant species at a first depth (D1) in the substrate beneath the first implant zone, the implant species is located by the implant process at a second implant area formed by the implant species at a second depth (D2) in the substrate beneath the second implant zone, wherein the first depth is greater than the second depth and the implant angle is chosen such that the implant species has in the second implant zone to pass through less implant mask material than in non-structured regions of the implant mask, wherein a bulk thickness of the block array and a thickness of the implant mask in non-structured regions is the same. <EOS>