Method for producing at least one through electrical connection and at least one through capacitor in a substrate, comprising: - forming in the substrate (SB) from a first face (F1) at least one first blind orifice (OR1) intended for forming the capacitor and at least one second blind orifice (OR2) intended for forming the through electrical connection, - forming a first electrode region of said capacitor at least on the side walls and on the bottom wall of the first blind orifice (OR1), said forming of the first electrode region including forming an initial electrically conductive layer in the first blind orifice (OR1) by electrolysis using an electrically conductive seed layer , - filling the first blind orifice (OR1) and the second blind orifice (OR2) by forming in the first orifice a stack including at least one dielectric layer and an additional electrically conductive layer on top of said dielectric layer, the additional layer forming a second electrode region of said capacitor and by forming in the second orifice a stack including at least the additional layer in order to form at least a part of said electrical connection, - thinning the substrate from a second face (F2) until the first and second blind orifices are exposed and the first electrode region in the first orifice is reached and said additional layer in the second orifice is reached to form the through electrical connection, said electrically conductive initial layer not being present in the bottom of the second orifice (OR2) after said thinning, and - producing a first electrically conductive zone (ZR1) in contact with said first electrode region and a second electrically conductive zone (ZR2) in contact with said through electrical connection, wherein the blind orifices (OR1, OR2) have the same depth and the height (h1) of the bottom portion of the first electrode region is greater than the distance (d2) separating the bottom wall of the second blind orifice from said additional layer contained in this second blind orifice. - forming in the substrate (SB) from a first face (F1) at least one first blind orifice (OR1) intended for forming the capacitor and at least one second blind orifice (OR2) intended for forming the through electrical connection, - forming a first electrode region of said capacitor at least on the side walls and on the bottom wall of the first blind orifice (OR1), said forming of the first electrode region including forming an initial electrically conductive layer in the first blind orifice (OR1) by electrolysis using an electrically conductive seed layer , - filling the first blind orifice (OR1) and the second blind orifice (OR2) by forming in the first orifice a stack including at least one dielectric layer and an additional electrically conductive layer on top of said dielectric layer, the additional layer forming a second electrode region of said capacitor and by forming in the second orifice a stack including at least the additional layer in order to form at least a part of said electrical connection, - thinning the substrate from a second face (F2) until the first and second blind orifices are exposed and the first electrode region in the first orifice is reached and said additional layer in the second orifice is reached to form the through electrical connection, said electrically conductive initial layer not being present in the bottom of the second orifice (OR2) after said thinning, and - producing a first electrically conductive zone (ZR1) in contact with said first electrode region and a second electrically conductive zone (ZR2) in contact with said through electrical connection, <EOS>