mhurhangee/patent-ind-claim-en huggingface dataset:
A method for forming a thin film between a pair of annular seal rings (3, 4; or 23, 24) and a rotatable runner (15, 35, or 67) within a circumferential seal assembly (1 or 21) comprising the steps of: (a) communicating a source flow into a feed groove communicable with at least two grooves , said feed groove and said grooves are disposed along an outer annular surface of said rotatable runner (15, 35 or 67), each said groove has an upstream end at an intersection between said groove and said feed groove and a downstream end ; (b) separating said source flow at said upstream ends into each said groove to form a longitudinal flow therein; (c) redirecting said longitudinal flow via interaction with a base shoulder interposed between a pair of base walls to form an outward radial flow adjacent to said base shoulder , said base walls disposed between a pair of side walls , said base walls arranged along said groove to decrease depthwise in the direction opposite to rotation of said rotatable runner (15, 35 or 67); and (d) redirecting said longitudinal flow via interaction with a side shoulder along at least one said side wall to form a lateral flow in the direction of another said side wall , said lateral flow and said outward radial flow perpendicular to one another and to said longitudinal flow . (a) communicating a source flow into a feed groove communicable with at least two grooves , said feed groove and said grooves are disposed along an outer annular surface of said rotatable runner (15, 35 or 67), each said groove has an upstream end at an intersection between said groove and said feed groove and a downstream end ; (b) separating said source flow at said upstream ends into each said groove to form a longitudinal flow therein; (c) redirecting said longitudinal flow via interaction with a base shoulder interposed between a pair of base walls to form an outward radial flow adjacent to said base shoulder , said base walls disposed between a pair of side walls , said base walls arranged along said groove to decrease depthwise in the direction opposite to rotation of said rotatable runner (15, 35 or 67); and (d) redirecting said longitudinal flow via interaction with a side shoulder along at least one said side wall to form a lateral flow in the direction of another said side wall , said lateral flow and said outward radial flow perpendicular to one another and to said longitudinal flow .
A structure comprising: a die embedded in a coreless substrate ; a dielectric material adjacent the die ; die pad interconnect structures disposed in a die pad area of the die ; and at least one functionalized carrier structure disposed within the coreless substrate ; vias in the coreless substrate disposed in a non-die area that are connected to the functionalized carrier structure ; and metallization layers disposed within the coreless substrate , wherein a first metallization layer is formed on the dielectric material adjacent the die ; wherein at least a portion of the metallization layers contact at least one via forming conductive path through the coreless substrate ; and wherein a top surface of the at least one functionalized carrier structure is coplanar with a top surface of the coreless substrate including the die ; wherein the functionalized carrier structure further comprises at least an inductor having a top surface coplanar with a top surface of the die; and wherein the vias connect the inductor electrically into the structure . a die embedded in a coreless substrate ; a dielectric material adjacent the die ; die pad interconnect structures disposed in a die pad area of the die ; and at least one functionalized carrier structure disposed within the coreless substrate ; vias in the coreless substrate disposed in a non-die area that are connected to the functionalized carrier structure ; and metallization layers disposed within the coreless substrate , wherein a first metallization layer is formed on the dielectric material adjacent the die ; wherein at least a portion of the metallization layers contact at least one via forming conductive path through the coreless substrate ; and wherein a top surface of the at least one functionalized carrier structure is coplanar with a top surface of the coreless substrate including the die ; wherein the functionalized carrier structure further comprises at least an inductor having a top surface coplanar with a top surface of the die; and wherein the vias connect the inductor electrically into the structure .
A sliding door assembly comprising a door frame , a door leaf , a pelmet , at least partly inside of which is provided a door suspension arrangement arranged to guide said door leaf in sliding between an open position and a closed position, wherein said sliding door assembly comprises a support arrangement , wherein said support arrangement comprises a pair of horizontally elongated metal profiles configured to mate with one another, one of which is provided along an upper side of said door leaf , and one of which is provided between said door leaf and said pelmet , characterized in that said horizontally elongated metal profile that is provided between said door leaf and said pelmet is U-shaped and is oriented such that the bottom part of the U is facing upwards, towards the pelmet, and is arranged to cover a gap between said door leaf and said door frame , wherein said horizontally elongated metal profile that is provided between said door leaf and said pelmet has a frame connecting side and a supporting side , wherein the supporting side and the door frame connecting side are the two side walls of the U-shaped metal profile , and wherein said horizontally elongated metal profile provided along an upper side of said door leaf protrudes between said door frame connecting side and said supporting side . a door frame , a door leaf , a pelmet , at least partly inside of which is provided a door suspension arrangement arranged to guide said door leaf in sliding between an open position and a closed position, wherein said sliding door assembly comprises a support arrangement , wherein said support arrangement comprises a pair of horizontally elongated metal profiles configured to mate with one another, one of which is provided along an upper side of said door leaf , and one of which is provided between said door leaf and said pelmet , characterized in that said horizontally elongated metal profile that is provided between said door leaf and said pelmet is U-shaped and is oriented such that the bottom part of the U is facing upwards, towards the pelmet, and is arranged to cover a gap between said door leaf and said door frame , wherein said horizontally elongated metal profile that is provided between said door leaf and said pelmet has a frame connecting side and a supporting side , wherein the supporting side and the door frame connecting side are the two side walls of the U-shaped metal profile , and wherein said horizontally elongated metal profile provided along an upper side of said door leaf protrudes between said door frame connecting side and said supporting side .
Set of instruments for surgical shoulder articulation replacement comprising a humeral implant the humeral implant comprising a hollow stem , said hollow stem being provided with a sharp distal edge , and the humeral implant being adapted to be impacted in a cancellous bone of a humeral head of a patient, with the sharp distal edge cutting the cancellous bone in the process, wherein said set of instruments comprises a reference punch (12; 16) matching the shape of the sharp distal edge of the hollow stem and adapted to create a groove in the bone for making a reference mark on the bone corresponding to the desired location of impaction of the sharp distal edge of the hollow stem .
Arrangement comprising a power tool having a working device and a handling device for supporting and moving the power tool on a plane, comprising - an apparatus for holding the power tool on the handling device , which has at least one guide groove on the power tool or on the handling device , at least one projection on the handling device or on the power tool suitable for engaging in the guide groove and a locking element for locking the power tool to the handling device ; wherein - the handling device is designed as a sliding carriage comprising a guide rod for manual guidance and has two wheels arranged on both sides of a housing of the handling device on a wheel axle , in particular a virtual wheel axle, wherein - a mounting point of the power tool on the handling device is arranged in the immediate vicinity of the working device and in the vicinity of the wheel axle in such a way that - a longitudinal axis of the guide rod can be arranged at an angle of between 60° and 90° to the plane on which the power tool is supported and, at least in one angle of the angle range, intersects the wheel axis perpendicularly. - an apparatus for holding the power tool on the handling device , which has at least one guide groove on the power tool or on the handling device , at least one projection on the handling device or on the power tool suitable for engaging in the guide groove and a locking element for locking the power tool to the handling device ; wherein - the handling device is designed as a sliding carriage comprising a guide rod for manual guidance and has two wheels arranged on both sides of a housing of the handling device on a wheel axle , in particular a virtual wheel axle, wherein - a mounting point of the power tool on the handling device is arranged in the immediate vicinity of the working device and in the vicinity of the wheel axle in such a way that - a longitudinal axis of the guide rod can be arranged at an angle of between 60° and 90° to the plane on which the power tool is supported and, at least in one angle of the angle range, intersects the wheel axis perpendicularly.
A thin film transistor substrate comprising: a substrate (SUB); a first thin film transistor (T1) disposed in a first area of the substrate (SUB) and comprising a polycrystalline semiconductor layer (A1), a first gate electrode (G1) on the polycrystalline semiconductor layer (A1), a first source electrode (S1) and a first drain electrode (Dl); a gate insulating layer (GI) covering the polycrystalline semiconductor layer (A1); a second thin film transistor (T2) disposed at a second area of the substrate (SUB) and comprising a second gate electrode (G2), an oxide semiconductor layer (A2) on the second gate electrode (G2), a second source electrode (S2) and a second drain electrode (D2), wherein the first gate electrode (G1) and the second gate electrode (G2) are formed as a same layer on the gate insulating layer (GI); a nitride layer (SIN) disposed on an area of the substrate excepting the second area and covering the first gate electrode (G1); and a first oxide layer (SIO) disposed over the first gate electrode (G1) and the second gate electrode (G2), on the nitride layer (SIN) and under the oxide semiconductor layer (A2), wherein the first oxide layer (SIO) is thicker than the nitride layer (SIN); and a second oxide layer (SIO2) disposed between the nitride layer (SIN) and the first gate electrode (G1) in the first area but not in the second area. a substrate (SUB); a first thin film transistor (T1) disposed in a first area of the substrate (SUB) and comprising a polycrystalline semiconductor layer (A1), a first gate electrode (G1) on the polycrystalline semiconductor layer (A1), a first source electrode (S1) and a first drain electrode (Dl); a gate insulating layer (GI) covering the polycrystalline semiconductor layer (A1); a second thin film transistor (T2) disposed at a second area of the substrate (SUB) and comprising a second gate electrode (G2), an oxide semiconductor layer (A2) on the second gate electrode (G2), a second source electrode (S2) and a second drain electrode (D2), wherein the first gate electrode (G1) and the second gate electrode (G2) are formed as a same layer on the gate insulating layer (GI); a nitride layer (SIN) disposed on an area of the substrate excepting the second area and covering the first gate electrode (G1); and a first oxide layer (SIO) disposed over the first gate electrode (G1) and the second gate electrode (G2), on the nitride layer (SIN) and under the oxide semiconductor layer (A2), wherein the first oxide layer (SIO) is thicker than the nitride layer (SIN); and a second oxide layer (SIO2) disposed between the nitride layer (SIN) and the first gate electrode (G1) in the first area but not in the second area.
Method for providing a service linked to the condition and/or behaviour of a vehicle and/or of a tyre, the method comprising the following steps: - when a vehicle passes a road infrastructure equipped with a system for assessing the condition of a vehicle, determining an identifier of the vehicle and/or of a tyre of the vehicle, - at the same time, determining at least one parameter representative of the condition of the vehicle and/or of a component of the vehicle, - transmitting the determined data to a remote data server, - from the identification data, retrieving external data concerning the vehicle and/or the tyre and/or the running conditions, - combining the determined information with the external data such as to determine a relevant indicator concerning the condition and/or the behaviour of a vehicle, - transmitting the relevant indicator to a provider of a service linked to the condition and/or to the behaviour of a vehicle and/or of a tyre. characterized in that the method comprises a step of geolocation of the vehicle during which it passes over the assessment system and the geolocation data are transmitted to the remote data server. - when a vehicle passes a road infrastructure equipped with a system for assessing the condition of a vehicle, determining an identifier of the vehicle and/or of a tyre of the vehicle, - at the same time, determining at least one parameter representative of the condition of the vehicle and/or of a component of the vehicle, - transmitting the determined data to a remote data server, - from the identification data, retrieving external data concerning the vehicle and/or the tyre and/or the running conditions, - combining the determined information with the external data such as to determine a relevant indicator concerning the condition and/or the behaviour of a vehicle, - transmitting the relevant indicator to a provider of a service linked to the condition and/or to the behaviour of a vehicle and/or of a tyre.
A computerized method, comprising: receiving information regarding a lockout-tagout procedure for a location or device; recalling the lockout-tagout procedure in response to receiving the information; presenting feedback instructions to a user regarding the lockout-tagout procedure; reading identifying information from one or more of a plurality of lockout-tagout devices that are placed or removed as a part of the lockout-tagout procedure in accordance with the feedback instructions presented to the user; and causing the one or more of the plurality of lockout-tagout devices that are placed or removed to be associated with the location or device in a memory when the one or more of the plurality of lockout-tagout devices are determined to comply with the lockout-tagout procedure, wherein the association is made in accordance with the lockout-tagout procedure. receiving information regarding a lockout-tagout procedure for a location or device; recalling the lockout-tagout procedure in response to receiving the information; presenting feedback instructions to a user regarding the lockout-tagout procedure; reading identifying information from one or more of a plurality of lockout-tagout devices that are placed or removed as a part of the lockout-tagout procedure in accordance with the feedback instructions presented to the user; and causing the one or more of the plurality of lockout-tagout devices that are placed or removed to be associated with the location or device in a memory
A heat-shrinkable polyester film which has a main shrinkage direction in a width direction of the film and satisfies following requirements to : the film has a thickness of 6 μm or more and 27 μm or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, and a molecular orientation angle of the film is determined for each of the samples, a maximum value of the molecular orientation angle is 5 degrees or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, a hot-water shrinkage at 90°C in the width direction of the film determined for each of the samples is 40% or more and 85% or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, a hot-water shrinkage at 90°C in the width direction of the film is determined for each of the samples, a difference between a maximum value and a minimum value of the hot-water shrinkage at 90°C in the width direction of the film is 2% or less; and when a width of 800 mm in the film of 800 mm or more in width is divided into four to obtain samples, and a maximum shrinkage stress at 90°C in the width direction of the film is determined for each of the samples, a difference between a maximum value and a minimum value of the maximum shrinkage stress at 90°C in the width direction of the film is less than 0.3 MPa. the film has a thickness of 6 μm or more and 27 μm or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, and a molecular orientation angle of the film is determined for each of the samples, a maximum value of the molecular orientation angle is 5 degrees or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, a hot-water shrinkage at 90°C in the width direction of the film determined for each of the samples is 40% or more and 85% or less; when a width of 800 mm in the film of 800 mm or more in width is divided into eight to obtain samples, a hot-water shrinkage at 90°C in the width direction of the film is determined for each of the samples, a difference between a maximum value and a minimum value of the hot-water shrinkage at 90°C in the width direction of the film is 2% or less; and when a width of 800 mm in the film of 800 mm or more in width is divided into four to obtain samples, and a maximum shrinkage stress at 90°C in the width direction of the film is determined for each of the samples, a difference between a maximum value and a minimum value of the maximum shrinkage stress at 90°C in the width direction of the film is less than 0.3 MPa.
Apparatus for forming plastic preforms into plastic containers , having a transport device which transports the plastic preforms along a predetermined transport path (P), wherein the transport device having a rotatable transport carrier on which a plurality of forming stations for forming the plastic preforms into the plastic containers is arranged, wherein the forming stations each have application devices , in order to pressurize the plastic preforms with a flowable and in particular gaseous medium, and wherein the apparatus has at least one rotatable annular channel coupled to the rotational movement of the transport carrier for storing the flowable and in particular gaseous medium, and this annular channel is in flow connection with the individual forming stations via connecting lines , characterized in that the annular channel extends in a predetermined plane and in particular a horizontal plane and a plurality of connections are provided on the annular channel for arranging the connecting lines and at least one of these connections extends from the annular channel in a direction which extends at an angle a of at least 20° relative to the plane of the annular channel.
A ferment extract from a strain of Eupenicillium crustaceum species, wherein the ferment extract comprises 31 to 79 % by weight of peptides, 1 to 8 % by weight of free amino acids, 10 to 27 % by weight of carbohydrates and 15 to 40 % by weight of lipids.
A data trustee environment comprising: one or more hardware processors and memory configured to provide computer program instructions to the one or more hardware processors; a user interface component configured to use the one or more hardware processors to be provided with a tenant agreement among a plurality of tenants of the data trustee environment, the tenant agreement specifying at least one computation for a data privacy pipeline to derive collaborative data in the data trustee environment from ingested data provided by one or more of the tenants; and a constraint manager configured to use the one or more hardware processors to enable the data privacy pipeline to derive the collaborative data in the data trustee environment based on enforcing at least one constraint associated with the collaborative data, the at least one constraint being specified by the tenant agreement, wherein the collaborative data comprises an exposable portion derived from the plurality of input datasets that is allowed to be shared and a restricted portion derived from the plurality of input datasets that is not allowed to be shared, wherein the data trustee environment is configured to prevent exposure of the ingested data or the restricted portion to the plurality of tenants. one or more hardware processors and memory configured to provide computer program instructions to the one or more hardware processors; a user interface component configured to use the one or more hardware processors to be provided with a tenant agreement among a plurality of tenants of the data trustee environment, the tenant agreement specifying at least one computation for a data privacy pipeline to derive collaborative data in the data trustee environment from ingested data provided by one or more of the tenants; and a constraint manager configured to use the one or more hardware processors to enable the data privacy pipeline to derive the collaborative data in the data trustee environment based on enforcing at least one constraint associated with the collaborative data, the at least one constraint being specified by the tenant agreement, wherein the collaborative data comprises an exposable portion derived from the plurality of input datasets that is allowed to be shared and a restricted portion derived from the plurality of input datasets that is not allowed to be shared, wherein the data trustee environment is configured to prevent exposure of the ingested data or the restricted portion to the plurality of tenants.
A method for positioning weldments in an ultrasonic welding device comprising a sonotrode , to which ultrasonic vibrations are applied and which emits longitudinal vibrations, and an anvil , a weldment accommodation being formed between a work surface of the sonotrode and an opposing surface of the anvil , a change in position Δx of a positioning device defining weld position P of the weldment being captured in the longitudinal direction of the sonotrode by means of a position sensor, characterized in that the application of vibrations to the sonotrode is changed such depending on the change in position Δx that a change in amplitude Δy is performed according to an amplitude characteristic curve of the sonotrode .