A manufacturing method for an air bridge structure , characterized by comprising: providing (S1) a substrate and forming a first photoresist structure on the substrate , the first photoresist structure comprising a first photoresist layer and a second photoresist layer , the first photoresist structure being provided with at least one first opening (T1) running through the first photoresist layer and the second photoresist layer , and the first opening (T1) comprising a first sub-opening (T11) that runs through the second photoresist layer and that comprises an undercut structure and a second sub-opening (T12) that runs through the first photoresist layer ; depositing (S2) an inorganic bridge supporting material layer on the substrate on which the first photoresist structure is formed, and stripping the first photoresist structure to form a bridge supporting structure located at the first opening (T1); forming (S3) a second photoresist structure on a side of the substrate on which the bridge supporting structure is formed, the second photoresist structure comprising a third photoresist layer , the second photoresist structure being provided with at least one second opening (T2) running through the third photoresist layer , the bridge supporting structure being located in the second opening (T2), and the second opening (T2) being used for forming the air bridge structure ; and depositing (S4) an air bridge material layer on the substrate on which the second photoresist structure is formed, stripping the second photoresist structure , and releasing the bridge supporting structure to obtain the air bridge structure . providing (S1) a substrate and forming a first photoresist structure on the substrate , the first photoresist structure comprising a first photoresist layer and a second photoresist layer , the first photoresist structure being provided with at least one first opening (T1) running through the first photoresist layer and the second photoresist layer , and the first opening (T1) comprising a first sub-opening (T11) that runs through the second photoresist layer and that comprises an undercut structure and a second sub-opening (T12) that runs through the first photoresist layer ; depositing (S2) an inorganic bridge supporting material layer on the substrate on which the first photoresist structure is formed, and stripping the first photoresist structure to form a bridge supporting structure located at the first opening (T1); forming (S3) a second photoresist structure on a side of the substrate on which the bridge supporting structure is formed, the second photoresist structure comprising a third photoresist layer , the second photoresist structure being provided with at least one second opening (T2) running through the third photoresist layer , the bridge supporting structure being located in the second opening (T2), and the second opening (T2) being used for forming the air bridge structure ; and depositing (S4) an air bridge material layer on the substrate on which the second photoresist structure is formed, stripping the second photoresist structure , and releasing the bridge supporting structure to obtain the air bridge structure . <EOS>