mhurhangee/patent-ind-claim-en huggingface dataset:
A rotary drive unit comprising; a motor case , a rotating plate rotatably provided in said motor case ; a ring-shaped vibration generating unit made up of a piezoelectric ceramic secured to an upper surface of said rotating plate and a vibrator fixed on said piezoelectric ceramic, a fixing ring placed on said vibrator , in which a rotational force is transmitted through a second friction force (F2) from said vibration generating unit , a friction sheet fixed on an upper surface of said fixing ring, a further friction sheet fixed on a lower surface of a top plate of said motor case and a wave washer interposed between said two friction sheets for generating a first friction force (F1) between said fixing ring and said motor case by biasing said two friction sheets in opposite directions, and an output shaft rotatably penetrating through said motor case and connectable to a rotation unit , wherein the second friction force (F2) generated between said vibration generating unit and said fixing ring is set to be larger than the first friction force (F1) generated between said fixing ring and said motor case, and wherein by applying a voltage on said piezoelectric ceramic, said vibration generating unit is adapted to generate a flexural wave motion that moves in a circumferential direction by ultrasonic vibration, said flexural wave motion is set to rotate said fixing ring and rotate said rotation unit via said output shaft, and in a case where a rotational force larger than said first friction force is generated between said fixing ring and said motor case acts, said fixing ring is adapted to slip with respect to said motor case.
A method of observing blades within a gas turbine engine, comprising: housing a first optical fiber in a trailing edge of an airfoil ; housing a second optical fiber in a leading edge of an airfoil in view of the first optical fiber ; defining a beam across an airflow passage such that said blades pass through the beam ; wherein said first optical fiber is included within a first optical tip timing probe , and said second optical fiber is included within a second optical tip timing probe , wherein the first and second optical tip timing probes are thereby directed toward each other such that one of the first and second optical tip timing probes operates as an emitter and the other of the first and second optical tip timing probes operates as a receiver; the method further comprising angling the beam with respect to an engine axis of rotation (A). housing a first optical fiber in a trailing edge of an airfoil ; housing a second optical fiber in a leading edge of an airfoil in view of the first optical fiber ; defining a beam across an airflow passage such that said blades pass through the beam ; wherein said first optical fiber is included within a first optical tip timing probe , and said second optical fiber is included within a second optical tip timing probe , wherein the first and second optical tip timing probes are thereby directed toward each other such that one of the first and second optical tip timing probes operates as an emitter and the other of the first and second optical tip timing probes operates as a receiver; the method further comprising angling the beam with respect to an engine axis of rotation (A).
A solar power supply device for a light, comprising at least one tubular solar module that can be slid onto a mast , characterised by a crown which can be fitted to the top of the mast and from which the solar module is suspended, wherein the solar module contains in its interior at least one pair of spring elements that can be resiliently spread apart, between which the mast can be passed through.
A compound of Formula I wherein R1 is selected from the group consisting of C 1 -C 6 alkyl, CF 3 , CH 2 CF 3 , CF 2 CHF 2 , C 3 -C 8 cycloalkyl, wherein said C 3 -C 8 cycloalkyl may be substituted with 1 or 2 F, CHF 2 or CF 3 , and R2 is H, C 1 -C 6 alkyl or CF 3 ; or R1 and R2 combine to form C 3 -C 5 cycloalkyl optionally substituted with 1 or 2 F, CHF 2 or CF 3 ; R3 is C 1 -C 3 alkyl or CH 2 O-C 1-3 alkyl, said C 1 -C 3 alkyl or CH 2 O-C 1-3 alkyl may optionally be substituted with 1 or 2 F; R4 is selected from the group consisting of OCF 3 , OCH 2 CF 3 or OCHF 2 , or a pharmaceutically acceptable salt thereof for use in the treatment of Focal (partial) epilepsy with simple partial seizures, Focal (partial) epilepsy with complex partial seizures, Generalized idiopathic epilepsy, Status epilepticus, KCNQ epileptic encephalopathy (KCNQ2EE), severe myoclonic epilepsy in infancy, epilepsy with continuous spike waves during slow-wave sleep, Lennox-Gastaut syndrome, Dravet syndrome, Early myoclonic encephalopathy Ohtahara syndrome, epileptic symptoms as part of neurogenerative disorders, , treatment resistant or refractory epilepsy, or seizures. R1 is selected from the group consisting of C 1 -C 6 alkyl, CF 3 , CH 2 CF 3 , CF 2 CHF 2 , C 3 -C 8 cycloalkyl, wherein said C 3 -C 8 cycloalkyl may be substituted with 1 or 2 F, CHF 2 or CF 3 , and R2 is H, C 1 -C 6 alkyl or CF 3 ; or R1 and R2 combine to form C 3 -C 5 cycloalkyl optionally substituted with 1 or 2 F, CHF 2 or CF 3 ; R3 is C 1 -C 3 alkyl or CH 2 O-C 1-3 alkyl, said C 1 -C 3 alkyl or CH 2 O-C 1-3 alkyl may optionally be substituted with 1 or 2 F; R4 is selected from the group consisting of OCF 3 , OCH 2 CF 3 or OCHF 2 , or a pharmaceutically acceptable salt thereof for use in the treatment of Focal (partial) epilepsy with simple partial seizures, Focal (partial) epilepsy with complex partial seizures, Generalized idiopathic epilepsy, Status epilepticus, KCNQ epileptic encephalopathy (KCNQ2EE), severe myoclonic epilepsy in infancy, epilepsy with continuous spike waves during slow-wave sleep, Lennox-Gastaut syndrome, Dravet syndrome, Early myoclonic encephalopathy Ohtahara syndrome, epileptic symptoms as part of neurogenerative disorders, , treatment resistant or refractory epilepsy, or seizures.
A method of forming an insulating spacer comprising: providing a base layer ; providing an intermediate layer above an upper surface of the base layer ; etching a first trench in the intermediate layer ; etching a second and third trench in the intermediate layer ; depositing a first insulating nitride material portion within the first trench ; depositing a second and third insulating nitride material portion within the second and third trenches, respectively, to form a first hook portion and a second hook portion , respectively, wherein the first and second hook portions are on opposite sides of the first insulating nitride material portion ; depositing a fourth insulating nitride material portion above an upper surface of the intermediate layer , the fourth insulating nitride material portion extending from the first insulating nitride material portion to the first hook portion and to the second hook portion ; forming an upper layer above an upper surface of the fourth insulating nitride material portion ; etching a fourth trench in the upper layer ; and depositing a fifth insulating nitride material portion within the fourth trench and on the upper surface of the fourth insulating nitride material portion , wherein a laterally extending portion of the second insulating nitride material portion above the first trench is grown upwardly from the intermediate layer . providing a base layer ; providing an intermediate layer above an upper surface of the base layer ; etching a first trench in the intermediate layer ; etching a second and third trench in the intermediate layer ; depositing a first insulating nitride material portion within the first trench ; depositing a second and third insulating nitride material portion within the second and third trenches, respectively, to form a first hook portion and a second hook portion , respectively, wherein the first and second hook portions are on opposite sides of the first insulating nitride material portion ; depositing a fourth insulating nitride material portion above an upper surface of the intermediate layer , the fourth insulating nitride material portion extending from the first insulating nitride material portion to the first hook portion and to the second hook portion ; forming an upper layer above an upper surface of the fourth insulating nitride material portion ; etching a fourth trench in the upper layer ; and depositing a fifth insulating nitride material portion within the fourth trench and on the upper surface of the fourth insulating nitride material portion , wherein a laterally extending portion of the second insulating nitride material portion above the first trench is grown upwardly from the intermediate layer .
An illumination device comprising: a coherent light source that emits a plurality of coherent light beams; an optical device that diffuses the plurality of coherent light beams and illuminates a predetermined illumination area; and a timing control unit that individually controls incident timing of the plurality of coherent light beams to the optical device or illumination timing of the illumination area, wherein the optical device has a plurality of diffusion regions on which respective coherent light beams are incident, the diffusion regions being provided so that each diffusion region corresponds to one of the coherent light beams, the plurality of diffusion regions illuminate the illumination area by diffusion of incident coherent light beams, the plurality of diffusion regions have a plurality of element diffusion regions, the plurality of element diffusion regions illuminate partial regions in the illumination area by diffusion of incident coherent light beams, and at least parts of the partial regions illuminated by the plurality of element diffusion regions are different from one another. a coherent light source that emits a plurality of coherent light beams; an optical device that diffuses the plurality of coherent light beams and illuminates a predetermined illumination area; and a timing control unit that individually controls incident timing of the plurality of coherent light beams to the optical device or illumination timing of the illumination area, wherein the optical device has a plurality of diffusion regions on which respective coherent light beams are incident, the diffusion regions being provided so that each diffusion region corresponds to one of the coherent light beams, the plurality of diffusion regions illuminate the illumination area by diffusion of incident coherent light beams, the plurality of diffusion regions have a plurality of element diffusion regions, the plurality of element diffusion regions illuminate partial regions in the illumination area by diffusion of incident coherent light beams, and at least parts of the partial regions illuminated by the plurality of element diffusion regions are different from one another.
Method for controlling an electric battery charger connected to a single-phase AC electricity grid , said battery charger comprising a power factor correction stage having a Vienna rectifier formed of three bridge arms each extending between two output terminals (H, L), each bridge arm being associated with a controlled high-side switch (Sah, Sbh, Sch) and a controlled low-side switch (Sal, Sbl, Scl) that are connected in opposition to one another, said method comprising a step of achieving a voltage to be produced (V ac ), a step of determining duty cycles suitable for slaving the sinusoidal currents at the input of the charger and a step of applying said duty cycles; characterized in that said step of applying the duty cycles comprises: - a step of selecting a first arm for applying the duty cycles and a second arm for applying the duty cycles from among the three Vienna rectifier bridge arms; and - during one and the same electrical period of said electricity grid, applying the duty cycles: o using one application arm (A, C) from among the two application arms (A, C) when the current (i a , i c ) is lower, in terms of absolute value, than a threshold value; and o jointly using the two application arms (A, C) when the current (i a , i c ) is greater, in terms of absolute value, than said threshold value. - a step of selecting a first arm for applying the duty cycles and a second arm for applying the duty cycles from among the three Vienna rectifier bridge arms; and - during one and the same electrical period of said electricity grid, applying the duty cycles: o using one application arm (A, C) from among the two application arms (A, C) when the current (i a , i c ) is lower, in terms of absolute value, than a threshold value; and o jointly using the two application arms (A, C) when the current (i a , i c ) is greater, in terms of absolute value, than said threshold value. o using one application arm (A, C) from among the two application arms (A, C) when the current (i a , i c ) is lower, in terms of absolute value, than a threshold value; and o jointly using the two application arms (A, C) when the current (i a , i c ) is greater, in terms of absolute value, than said threshold value.
A method comprising: obtaining a substrate comprising at least one exposed flat metal surface; and depositing metal onto the at least one exposed flat metal surface of the substrate and around at least a portion of an optical fiber to secure the optical fiber to the substrate and encase at least the portion of the optical fiber, the optical fiber contacting the flat metal surface, the optical fiber being coiled on the flat metal surface; wherein the substrate and the deposited metal are configured to remove heat from the optical fiber. obtaining a substrate comprising at least one exposed flat metal surface; and depositing metal onto the at least one exposed flat metal surface of the substrate and around at least a portion of an optical fiber to secure the optical fiber to the substrate and encase at least the portion of the optical fiber, the optical fiber contacting the flat metal surface, the optical fiber being coiled on the flat metal surface; wherein the substrate and the deposited metal are configured to remove heat from the optical fiber.
A CO 2 saturation device for the application of carbon dioxide snow, comprising: an injector body with a straight internal tube that leads to injection holes that exit into the inside of an evacuation duct , a coupling joined to the distal end of the evacuation duct and to an application extension , in which the coupling incorporating a portion having a narrowed diameter in the central area thereof; an applicator connected to the distal end of the application extension , wherein the applicator has a deflector that passes diametrically through the distal end of the applicator to direct the discharge fluid; and being characterized in that it comprises an insulating chamber consisting of a container that surrounds the coupling and the evacuation duct , being a thermal insulator the interstitial air space generated between the insulating chamber and those coupling and evacuation duct . an injector body with a straight internal tube that leads to injection holes that exit into the inside of an evacuation duct , a coupling joined to the distal end of the evacuation duct and to an application extension , in which the coupling incorporating a portion having a narrowed diameter in the central area thereof; an applicator connected to the distal end of the application extension , wherein the applicator has a deflector that passes diametrically through the distal end of the applicator to direct the discharge fluid; and being characterized in that it comprises an insulating chamber consisting of a container that surrounds the coupling and the evacuation duct , being a thermal insulator the interstitial air space generated between the insulating chamber and those coupling and evacuation duct .
A method of managing a system information block, SIB, by a device , in a wireless communication network, the method comprising: obtaining a primary synchronization signal, PSS, and a secondary synchronization signal, SSS, from a base station ; obtaining information from the PSS and the SSS; obtaining a time resource and a frequency resource based on the information obtained from the PSS and the SSS; and obtaining the SIB through the time resource and the frequency resource, wherein the information obtained from the PSS and the SSS includes a cell identity, ID, of the base station , and the time resource is a subframe with a subframe number obtained based on a function that applies modulo operation to the cell ID. obtaining a primary synchronization signal, PSS, and a secondary synchronization signal, SSS, from a base station ; obtaining information from the PSS and the SSS; obtaining a time resource and a frequency resource based on the information obtained from the PSS and the SSS; and obtaining the SIB through the time resource and the frequency resource, wherein the information obtained from the PSS and the SSS includes a cell identity, ID, of the base station , and the time resource is a subframe with a subframe number obtained based on a function that applies modulo operation to the cell ID.
Chemical-mechanical polishing (CMP) composition for polishing of substrates comprising a surface region or layer consisting of copper or a copper-based alloy, said chemical-mechanical composition comprising (A) an amount of abrasive particles consisting of (A1) an amount of composite particles wherein each composite particle comprises (i) a continuous matrix phase comprising an addition polymer of one or more ethylenically unsaturated monomers and dispersed in said continuous matrix phase (ii) a dispersed phase consisting of a plurality of divided phase domains consisting of silicon dioxide (A2) optionally an amount of further abrasive particles which are not composite particles (A1) (B) one or more complexing agents selected from the group consisting of organic acids and inorganic acids; (C) one or more corrosion inhibitors selected from the group consisting of azoles; (D) one or more oxidizing agents selected from the group consisting of peroxides, persulfates, perchlorates, perbromates, periodates and permanganates; and (E) water, wherein each of the said discrete domains is completely enveloped by said matrix phase. (A) an amount of abrasive particles consisting of (A1) an amount of composite particles wherein each composite particle comprises (i) a continuous matrix phase comprising an addition polymer of one or more ethylenically unsaturated monomers and dispersed in said continuous matrix phase (ii) a dispersed phase consisting of a plurality of divided phase domains consisting of silicon dioxide (A2) optionally an amount of further abrasive particles which are not composite particles (A1) (A1) an amount of composite particles wherein each composite particle comprises (i) a continuous matrix phase comprising an addition polymer of one or more ethylenically unsaturated monomers and dispersed in said continuous matrix phase (ii) a dispersed phase consisting of a plurality of divided phase domains consisting of silicon dioxide (i) a continuous matrix phase comprising an addition polymer of one or more ethylenically unsaturated monomers and dispersed in said continuous matrix phase (ii) a dispersed phase consisting of a plurality of divided phase domains consisting of silicon dioxide (A2) optionally an amount of further abrasive particles which are not composite particles (A1) (B) one or more complexing agents selected from the group consisting of organic acids and inorganic acids; (C) one or more corrosion inhibitors selected from the group consisting of azoles; (D) one or more oxidizing agents selected from the group consisting of peroxides, persulfates, perchlorates, perbromates, periodates and permanganates; and (E) water,
A semiconductor device comprising: a substrate ; a first contact layer on the substrate ; a channel layer on the first contact layer , the channel layer including a two-dimensional electron gas layer on side-walls of the channel in a direction perpendicular to the substrate; a second contact layer on the channel layer ; a barrier layer on the first contact layer , on the second contact layer, and on the side walls of the channel layer ; a gate electrode on at least one side surface of the barrier layer ; a first electrode on the first contact layer ; a second electrode on the second contact layer , a semiconductor layer between the gate electrode and the barrier layer , wherein the first contact layer and the second contact layer are of a first conductivity type and the semiconductor layer is of a second conductivity type, wherein the semiconductor layer forms a second conductivity type gate. a substrate ; a first contact layer on the substrate ; a channel layer on the first contact layer , the channel layer including a two-dimensional electron gas layer on side-walls of the channel in a direction perpendicular to the substrate; a second contact layer on the channel layer ; a barrier layer on the first contact layer , on the second contact layer, and on the side walls of the channel layer ; a gate electrode on at least one side surface of the barrier layer ; a first electrode on the first contact layer ; a second electrode on the second contact layer , a semiconductor layer between the gate electrode and the barrier layer , wherein the first contact layer and the second contact layer are of a first conductivity type and the semiconductor layer is of a second conductivity type, wherein the semiconductor layer forms a second conductivity type gate.