Analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40) for a field effect transistor having a movable gate structure, comprising: a measuring circuit , which is coupled on a supply voltage terminal (V DD ) of the analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40), which can be coupled on a drain terminal of the field effect transistor , and which is designed to output a measurement signal (I out ; V out ) at a measurement terminal (S out ), said measurement signal being dependent on the current intensity of a current flowing through the field effect transistor , characterized by an impedance converter circuit having a reference voltage terminal (V ref ), said impedance converter circuit being coupled on the measuring circuit , which can be coupled on the drain terminal of the field effect transistor , and being designed to hold the drain terminal of the field effect transistor at the potential of a reference voltage applied to the reference voltage terminal (V ref ), wherein the impedance converter circuit has: a source follower transistor , which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor ; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor , an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor , and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref ). a measuring circuit , which is coupled on a supply voltage terminal (V DD ) of the analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40), which can be coupled on a drain terminal of the field effect transistor , and which is designed to output a measurement signal (I out ; V out ) at a measurement terminal (S out ), said measurement signal being dependent on the current intensity of a current flowing through the field effect transistor , characterized by an impedance converter circuit having a reference voltage terminal (V ref ), said impedance converter circuit being coupled on the measuring circuit , which can be coupled on the drain terminal of the field effect transistor , and being designed to hold the drain terminal of the field effect transistor at the potential of a reference voltage applied to the reference voltage terminal (V ref ), wherein the impedance converter circuit has: a source follower transistor , which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor ; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor , an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor , and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref ). a source follower transistor , which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor ; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor , an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor , and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref ). <EOS>