A spin transistor comprising: A first insulating layer disposed on a substrate ; a first gate electrode and a source disposed on the first insulating layer , and a second insulating layer separating the first gate electrode from the source , the source comprising a magnetic material; a first gate insulating layer on the first gate electrode , and a first tunnel barrier on the source ; a channel formed of a magnetic material configured to selectively pass a spin-polarized electron having a specific spin direction, disposed on the first tunnel barrier , the first gate insulating layer and the second insulating layer ; a drain and a second gate electrode formed on the channel , and a third insulating layer separating the drain from the second gate electrode ; a second gate insulating layer disposed between the second gate electrode and the channel ; a second tunnel barrier disposed between the channel and the drain ; wherein the source corresponds to the drain with respect to the channel and the first gate electrode corresponds to the second gate electrode with respect to the channel, so that a gate voltage applied to at least one of the first and second gate electrodes causes the spin-polarized electrons to move from the source to the drain, wherein the first gate electrode and the second gate electrode are configured to control a magnetization state of the channel to selectively pass the spin-polarized electrons injected from the source into the channel; wherein the source comprises: a metal layer disposed on the insulating layer ; an anti-ferromagnetic layer on the metal layer ; and a ferromagnetic layer disposed on the anti-ferromagnetic layer . A first insulating layer disposed on a substrate ; a first gate electrode and a source disposed on the first insulating layer , and a second insulating layer separating the first gate electrode from the source , the source comprising a magnetic material; a first gate insulating layer on the first gate electrode , and a first tunnel barrier on the source ; a channel formed of a magnetic material configured to selectively pass a spin-polarized electron having a specific spin direction, disposed on the first tunnel barrier , the first gate insulating layer and the second insulating layer ; a drain and a second gate electrode formed on the channel , and a third insulating layer separating the drain from the second gate electrode ; a second gate insulating layer disposed between the second gate electrode and the channel ; a second tunnel barrier disposed between the channel and the drain ; wherein the source corresponds to the drain with respect to the channel and the first gate electrode corresponds to the second gate electrode with respect to the channel, so that a gate voltage applied to at least one of the first and second gate electrodes causes the spin-polarized electrons to move from the source to the drain, wherein the first gate electrode and the second gate electrode are configured to control a magnetization state of the channel to selectively pass the spin-polarized electrons injected from the source into the channel; wherein the source comprises: a metal layer disposed on the insulating layer ; an anti-ferromagnetic layer on the metal layer ; and a ferromagnetic layer disposed on the anti-ferromagnetic layer . a metal layer disposed on the insulating layer ; an anti-ferromagnetic layer on the metal layer ; and a ferromagnetic layer disposed on the anti-ferromagnetic layer . <EOS>