A high voltage thin-film transistor comprising: - a gate electrode (G11, G21) in a gate electrode layer , - a semiconductive channel (C11,C12) in a channel layer parallel to said gate electrode layer and being electrically insulated from said gate electrode by a gate dielectric layer , the channel layer having a first surface facing the gate electrode layer and a second surface opposite the first surface, - a dominant main electrode and a sub-ordinate main electrode (M12, M11), each having an external portion (M12e, M11e) in a main electrode layer and an internal portion (M12i, M11i) that protrudes through a further dielectric layer between the main electrode layer and the channel layer to electrically contact the semiconductive channel in a dominant main electrode contact area (M12c) and a subordinate main electrode contact area (M11c) respectively, wherein a first distance (D1) is defined between a side of the dominant main electrode contact area (M12c) facing the subordinate main electrode contact area (M11c) and a side of the external portion (M12e) of the dominant main electrode (M12) facing the external portion (M11e) of the subordinate main electrode (M11), and a second distance (D2) is defined between a side of the subordinate main electrode contact area (M11c) facing the dominant main electrode contact area (M12c) and a side of the external portion (M11e) of the subordinate main electrode (M11) facing the external portion (M12e) of the dominant main electrode (M12), wherein the first distance (D1) is at least twice as large as the second distance (D2), wherein the second surface of the semiconductive channel layer faces the main electrode layer - a gate electrode (G11, G21) in a gate electrode layer , - a semiconductive channel (C11,C12) in a channel layer parallel to said gate electrode layer and being electrically insulated from said gate electrode by a gate dielectric layer , the channel layer having a first surface facing the gate electrode layer and a second surface opposite the first surface, - a dominant main electrode and a sub-ordinate main electrode (M12, M11), each having an external portion (M12e, M11e) in a main electrode layer and an internal portion (M12i, M11i) that protrudes through a further dielectric layer between the main electrode layer and the channel layer to electrically contact the semiconductive channel in a dominant main electrode contact area (M12c) and a subordinate main electrode contact area (M11c) respectively, wherein a first distance (D1) is defined between a side of the dominant main electrode contact area (M12c) facing the subordinate main electrode contact area (M11c) and a side of the external portion (M12e) of the dominant main electrode (M12) facing the external portion (M11e) of the subordinate main electrode (M11), and a second distance (D2) is defined between a side of the subordinate main electrode contact area (M11c) facing the dominant main electrode contact area (M12c) and a side of the external portion (M11e) of the subordinate main electrode (M11) facing the external portion (M12e) of the dominant main electrode (M12), wherein the first distance (D1) is at least twice as large as the second distance (D2), wherein the second surface of the semiconductive channel layer faces the main electrode layer <EOS>