A single chip referenced bridge type magnetic field sensor for a high-intensity magnetic field comprising: a substrate ; at least one reference arm deposited on the substrate, the reference arm comprising at least one row/column of reference element strings which comprise one or at least two identical electrically interconnected magnetoresistive sense elements; at least one sense arm deposited on the substrate, the sense arm comprising at least one row/column of sense element strings which comprise one or at least two identical electrically interconnected magnetoresistive sense elements; wherein, the reference arm and the sense arm are connected to form a bridge; the reference element strings and the sense element strings are the same in number of rows/columns and are mutually interleaved in a spaced manner along a longitudinal or transverse direction; a gain coefficient of a magnetic field at the position of the sense element strings is greater than a gain coefficient of a magnetic field at the position of the reference element strings; characterized by the sensor comprising at least one attenuator and at least two shielding structures , the attenuator and the shielding structures being mutually interleaved in a spaced manner, the shapes of the shielding structures and the attenuators are arrays of long bars which extend along a transverse/longitudinal direction, and width and area of the shielding structures being respectively greater than width and area of the attenuator; and each reference element string is located below or above a shielding structure, and each sense element string is located below or above an attenuator. a substrate ; at least one reference arm deposited on the substrate, the reference arm comprising at least one row/column of reference element strings which comprise one or at least two identical electrically interconnected magnetoresistive sense elements; at least one sense arm deposited on the substrate, the sense arm comprising at least one row/column of sense element strings which comprise one or at least two identical electrically interconnected magnetoresistive sense elements; wherein, the reference arm and the sense arm are connected to form a bridge; the reference element strings and the sense element strings are the same in number of rows/columns and are mutually interleaved in a spaced manner along a longitudinal or transverse direction; a gain coefficient of a magnetic field at the position of the sense element strings is greater than a gain coefficient of a magnetic field at the position of the reference element strings; characterized by the sensor comprising at least one attenuator and at least two shielding structures , the attenuator and the shielding structures being mutually interleaved in a spaced manner, the shapes of the shielding structures and the attenuators are arrays of long bars which extend along a transverse/longitudinal direction, and width and area of the shielding structures being respectively greater than width and area of the attenuator; and each reference element string is located below or above a shielding structure, and each sense element string is located below or above an attenuator. <EOS>