A preparation process for a localized rear contact solar cell, comprising the following steps: - removing the damaged layer on the surface of a silicon wafer and polishing both the front and back surfaces thereof, - texturing the surfaces of the silicon wafer, - forming PN junction, - etching, - removing the glass impurity, - depositing a passivation film on the back surface thereof, - depositing a passivating antireflective layer on the front surface thereof, - making local openings on the back surface, - screen printing of metal paste on both the front surface and the back surface and sintering; and in that: - the step of texturing employs a catalytic metal corrosion approach, and the textured structure is a nanometer-level textured structure; - the step of removing the damaged layer on the surface of a silicon wafer and the step of polishing both the front and back surfaces thereof are performed in one single step; - the step of removing the damaged layer on the surface of a silicon wafer and polishing both the front and back surfaces thereof is carried out in an alkali liquid selected from a NaOH solution, a KOH solution or a tetramethylammonium hydroxide solution, and the operating time thereof is from 2 to 20 minutes, the operating temperature is within a range of from 5 to 95° C, and the volumetric concentration of the alkali liquid is higher than 1%. - removing the damaged layer on the surface of a silicon wafer and polishing both the front and back surfaces thereof, - texturing the surfaces of the silicon wafer, - forming PN junction, - etching, - removing the glass impurity, - depositing a passivation film on the back surface thereof, - depositing a passivating antireflective layer on the front surface thereof, - making local openings on the back surface, - screen printing of metal paste on both the front surface and the back surface and sintering; and in that: - the step of texturing employs a catalytic metal corrosion approach, and the textured structure is a nanometer-level textured structure; - the step of removing the damaged layer on the surface of a silicon wafer and the step of polishing both the front and back surfaces thereof are performed in one single step; - the step of removing the damaged layer on the surface of a silicon wafer and polishing both the front and back surfaces thereof is carried out in an alkali liquid selected from a NaOH solution, a KOH solution or a tetramethylammonium hydroxide solution, and the operating time thereof is from 2 to 20 minutes, the operating temperature is within a range of from 5 to 95° C, and the volumetric concentration of the alkali liquid is higher than 1%. - the step of texturing employs a catalytic metal corrosion approach, and the textured structure is a nanometer-level textured structure; - the step of removing the damaged layer on the surface of a silicon wafer and the step of polishing both the front and back surfaces thereof are performed in one single step; - the step of removing the damaged layer on the surface of a silicon wafer and polishing both the front and back surfaces thereof is carried out in an alkali liquid selected from a NaOH solution, a KOH solution or a tetramethylammonium hydroxide solution, and the operating time thereof is from 2 to 20 minutes, the operating temperature is within a range of from 5 to 95° C, and the volumetric concentration of the alkali liquid is higher than 1%. <EOS>