Current-assisted photonic demodulator adapted to detect light radiation of interest, comprising: ∘ a detection portion , extending vertically between a first face (F1) and a second face (F2) both parallel to a main plane, and comprising: • at least two p-doped regions , intended to generate and modulate a drift current in the detection portion , lying flush with the first face (F1) and located on either side of a central zone (Zc) of the first face F1; • at least two n-doped regions , adapted to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest in the detection portion , lying flush with the first face (F1) and located adjacent to the p-doped regions ; ∘ a dielectric passivation layer , made of an electrically insulating material, and covering the first face (F1); ∘ modulation electrodes (M1, M2), passing through the dielectric passivation layer and in contact with the p-doped regions ; and collection electrodes (C1, C2), passing through the dielectric passivation layer and in contact with the n-doped regions ; ∘ characterised in that it comprises intermediate electrodes (I1, I2), intended to be negatively biased, partly passing through the dielectric passivation layer and spaced apart from the first face (F1) by a non-zero distance, each being located, in projection onto the main plane, between one of the p-doped regions and the adjacent n-doped region . ∘ a detection portion , extending vertically between a first face (F1) and a second face (F2) both parallel to a main plane, and comprising: • at least two p-doped regions , intended to generate and modulate a drift current in the detection portion , lying flush with the first face (F1) and located on either side of a central zone (Zc) of the first face F1; • at least two n-doped regions , adapted to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest in the detection portion , lying flush with the first face (F1) and located adjacent to the p-doped regions ; • at least two p-doped regions , intended to generate and modulate a drift current in the detection portion , lying flush with the first face (F1) and located on either side of a central zone (Zc) of the first face F1; • at least two n-doped regions , adapted to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest in the detection portion , lying flush with the first face (F1) and located adjacent to the p-doped regions ; ∘ a dielectric passivation layer , made of an electrically insulating material, and covering the first face (F1); ∘ modulation electrodes (M1, M2), passing through the dielectric passivation layer and in contact with the p-doped regions ; and collection electrodes (C1, C2), passing through the dielectric passivation layer and in contact with the n-doped regions ; ∘ characterised in that it comprises intermediate electrodes (I1, I2), intended to be negatively biased, partly passing through the dielectric passivation layer and spaced apart from the first face (F1) by a non-zero distance, each being located, in projection onto the main plane, between one of the p-doped regions and the adjacent n-doped region . <EOS>