mhurhangee/patent-ind-claim-en huggingface dataset:
A method of checking a tunnel monitoring system, wherein the tunnel monitoring system comprises a plurality of sensor units (12a - 12c) which are configured to monitor at least one air quality parameter, wherein each sensor unit (12a - 12c) has at least one sensor (14a - 14c) and an evaluation unit (16a - 16c) which is connected to the sensor (14a - 14c) and which generates a measurement signal on the basis of a raw signal generated by the sensor (14a - 14c) and on the basis of at least one internal evaluation parameter, which measurement signal characterizes the air quality parameter; and wherein a first sensor unit is operated in a checking mode of operation such that a reference air quality detectable by the sensor of the first sensor unit is produced or simulated for a specific air quality parameter and such that the sensor of the first sensor unit generates a corresponding reference raw signal for the reference air quality, characterized in that , in the checking mode of operation, a checking measurement signal is generated for all the sensor units (12a - 12c) to be checked on the basis of the reference raw signal generated by the sensor of the first sensor unit and on the basis of the at least one internal evaluation parameter of that evaluation unit (14a - 14c) which is associated with the respective sensor unit (12a - 12c) to be checked; and in that the operability of the sensor unit (12a - 12c) is checked on the basis of a comparison between the checking measurement signal and a reference parameter which characterizes the reference air quality, with at least one of the sensor units (12a - 12c) to be checked being different from the first sensor unit .
A method for transferring ordered data of a data stream from a Request Node to a target device in a data processing network, the method comprising: sending, by the Request Node to one or more Home Nodes of the data processing network, a plurality of first write requests; for each first write request of the plurality of first write requests: sending, by a Home Node of the one or more Home Nodes to which the first write request was sent, a write data buffer credit message, identifying a data buffer for receiving data associated with the first write request, and a completion message indicating completion by the Home Node ; sending, by the Request Node to the Home Node responsive to the write data buffer credit message, data to be written; sending, by the Request Node to the Home Node responsive to the completion message, a first completion acknowledgement message; sending, by the Home Node to the target device responsive to the first completion acknowledgement message, the data to be written; and sending, by the target device to the Home Node responsive to receiving the data to be written, a second completion acknowledgement message, where the first completion acknowledgement message is not sent by the Request Node until completion messages for all older write requests of the data stream have been received by the Request Node . sending, by the Request Node to one or more Home Nodes of the data processing network, a plurality of first write requests; for each first write request of the plurality of first write requests: sending, by a Home Node of the one or more Home Nodes to which the first write request was sent, a write data buffer credit message, identifying a data buffer for receiving data associated with the first write request, and a completion message indicating completion by the Home Node ; sending, by the Request Node to the Home Node responsive to the write data buffer credit message, data to be written; sending, by the Request Node to the Home Node responsive to the completion message, a first completion acknowledgement message; sending, by the Home Node to the target device responsive to the first completion acknowledgement message, the data to be written; and sending, by the target device to the Home Node responsive to receiving the data to be written, a second completion acknowledgement message, sending, by a Home Node of the one or more Home Nodes to which the first write request was sent, a write data buffer credit message, identifying a data buffer for receiving data associated with the first write request, and a completion message indicating completion by the Home Node ; sending, by the Request Node to the Home Node responsive to the write data buffer credit message, data to be written; sending, by the Request Node to the Home Node responsive to the completion message, a first completion acknowledgement message; sending, by the Home Node to the target device responsive to the first completion acknowledgement message, the data to be written; and sending, by the target device to the Home Node responsive to receiving the data to be written, a second completion acknowledgement message,
Gauge spacing apparatus for positioning a plurality of pot sleepers with respect to existing sleepers of an existing railway track provided with a pair of turnout rails which are separated from one another by a desired gauge distance, the gauge spacing apparatus comprising a gauge spacing A-frame having a first guide member to be substantially aligned with and secured with respect to a portion of existing rail; and a second guide member which is angled with respect to the first guide member ; wherein at least one of the first and second guide members is provided with at least an adjustable sleeper engagement bracket adapted to selectively translate along at least a portion of the respective first or second guide members and to connect to a respective existing sleeper of the existing railway track or to a pot sleeper of the turnout rails . a first guide member to be substantially aligned with and secured with respect to a portion of existing rail; and a second guide member which is angled with respect to the first guide member ; wherein at least one of the first and second guide members is provided with at least an adjustable sleeper engagement bracket adapted to selectively translate along at least a portion of the respective first or second guide members and to connect to a respective existing sleeper of the existing railway track or to a pot sleeper of the turnout rails .
A method for high-availability operation among a plurality of network controllers , the method comprising the steps of : receiving , by at least a first master network controller , state information from each of a plurality of network elements ; communicating regarding the state information from the first master network controller , to each of a plurality of follower network controllers ; communicating transformed state information from the first master network controller to the plurality of network elements ; and receiving, by the plurality of follower network controllers , transformed state information from the plurality of network elements ; and continuing the high-availability operation with a new master network controller selected from among the plurality of follower network controllers as a failover, using a coherent set of the transformed state information in the new master network controller and in the plurality of network elements , responsive to a failure of the first master network controller .
A set of bed mattresses that includes a bed mattress and a mattress topper in a mattress topper case , wherein the thickness of the mattress topper decreases towards the edges of the mattress , so that there is gap between the edges of the bed mattress and the mattress topper for placing the edges of a sheet under the edges of the mattress topper case , characterized in that the middle portion of the lower side of the mattress topper case is removably fastened by means of a substantially rectangularly sewn zipper to the middle portion of the upper side of the bed mattress .
Sheet-fed printing unit , the sheet-fed printing unit being configured as a screen printing unit and comprising at least one screen printing forme cylinder and at least one impression cylinder cooperating therewith, and a cylinder barrel of the impression cylinder including a supporting surface for sheets , which comprises at least one impression portion having a constant barrel radius (R1) that extends over an angle of at least 170° about the axis of rotation of the impression cylinder , and the screen printing forme cylinder having an effective screen radius (R2), and the effective screen radius (R2) being smaller than the barrel radius (R1), and the effective screen radius (R2) being larger than half the barrel radius (R1).
Rotor of an electric motor, comprising a plurality of armature sections which are designed as individual, separate armature blocks , a plurality of magnets , wherein the armature blocks and the magnets are individually and alternately put together to form a substantially annular arrangement and wherein a magnet is arranged between in each case two adjacent armature blocks , a rotor core and a plastic encapsulation, wherein the rotor core is formed by the plastic encapsulation from plastic, characterized in that the individual armature blocks , on their inner side which faces a rotor centre axis (Y-Y), have a plurality of eyelet-like anchoring means (2*) which are arranged in a manner distributed at equal distances in relation to one another over the length of an associated armature block , wherein, in the encapsulated state of the rotor 1, all of these anchoring arrangements (2*) are surrounded by the plastic compound of the rotor core , so that they form a solid interlocking connection with the rotor core . a plurality of magnets , wherein the armature blocks and the magnets are individually and alternately put together to form a substantially annular arrangement and wherein a magnet is arranged between in each case two adjacent armature blocks , a rotor core and a plastic encapsulation, wherein the rotor core is formed by the plastic encapsulation from plastic, characterized in that the individual armature blocks , on their inner side which faces a rotor centre axis (Y-Y), have a plurality of eyelet-like anchoring means (2*) which are arranged in a manner distributed at equal distances in relation to one another over the length of an associated armature block , wherein, in the encapsulated state of the rotor 1, all of these anchoring arrangements (2*) are surrounded by the plastic compound of the rotor core , so that they form a solid interlocking connection with the rotor core .
A switch mode switching method, comprising: Receiving , by a switch, a mode switch request message sent by a controller, wherein the mode switch request message is used to instruct the switch to switch from a conventional switching mode to an OpenFlow switching mode; wherein in response to the mode switch request message, freezing , by the switch, all routing and switching information tables of the switch in the conventional switching mode, and converting, according to routing and switching information in each routing and switching information table, the routing and switching information table into an OpenFlow flow table corresponding to the routing and switching information table, wherein the OpenFlow flow table comprises at least one OpenFlow flow entry; and switching , by the switch, to the OpenFlow switching mode, and sending a mode switch response message to the controller. Receiving , by a switch, a mode switch request message sent by a controller, wherein the mode switch request message is used to instruct the switch to switch from a conventional switching mode to an OpenFlow switching mode; wherein in response to the mode switch request message, freezing , by the switch, all routing and switching information tables of the switch in the conventional switching mode, and converting, according to routing and switching information in each routing and switching information table, the routing and switching information table into an OpenFlow flow table corresponding to the routing and switching information table, wherein the OpenFlow flow table comprises at least one OpenFlow flow entry; and switching , by the switch, to the OpenFlow switching mode, and sending a mode switch response message to the controller.
A turbine for a turbocharger, comprising: a turbine impeller coupled to a compressor impeller via a rotational shaft; a turbine casing disposed so as to cover the turbine impeller, the turbine casing including a scroll flow passage and a scroll outlet portion disposed on an inner side, in a radial direction, of the scroll flow passage, for guiding exhaust gas from the scroll flow passage to the turbine impeller; and a back-surface side member disposed so as to face a back surface of the turbine impeller, wherein the back-surface side member includes a protruding portion disposed on an impeller facing surface which faces the back surface of the turbine impeller, the protruding portion protruding toward said back surface and extending in a circumferential direction, and wherein the protruding portion is configured to contract a flow of the exhaust gas flowing into a gap between the back surface of the turbine impeller and the impeller facing surface from the scroll outlet portion such as to increase the static pressure applied to said back surface of the turbine impeller and thus increasing the thrust force (FT) that acts on said back surface of the turbine impeller. a turbine impeller coupled to a compressor impeller via a rotational shaft; a turbine casing disposed so as to cover the turbine impeller, the turbine casing including a scroll flow passage and a scroll outlet portion disposed on an inner side, in a radial direction, of the scroll flow passage, for guiding exhaust gas from the scroll flow passage to the turbine impeller; and a back-surface side member disposed so as to face a back surface of the turbine impeller, wherein the back-surface side member includes a protruding portion disposed on an impeller facing surface which faces the back surface of the turbine impeller, the protruding portion protruding toward said back surface and extending in a circumferential direction, and wherein the protruding portion is configured to contract a flow of the exhaust gas flowing into a gap between the back surface of the turbine impeller and the impeller facing surface from the scroll outlet portion such as to increase the static pressure applied to said back surface of the turbine impeller and thus increasing the thrust force (FT) that acts on said back surface of the turbine impeller.
A solid polymer electrolysis method comprising supplying carbon dioxide to one of electrodes of a reactor having a membrane electrode assembly provided with a catalyst layer and supplying water vapor, or liquid water as a supply source of hydrogen to the other electrode to produce a hydrocarbon, optionally, humidifying the supplied carbon dioxide with water, controlling an electrolysis voltage applied from the outside and controlling a temperature of the reactor; and, by controlling the voltage, temperature and humidification conditions, changing amounts of hydrocarbons produced per unit time and a ratio sorted by kind of the hydrocarbons.
A transistor, comprising: a substrate ; a pair of spacers on a portion of the substrate; a gate dielectric layer above a portion of the substrate between the pair of spacers, the gate dielectric layer comprising hafnium oxide, wherein the gate dielectric layer is along the portion of the substrate between the pair of spacers and along sidewalls of the pair of spacers; a gate electrode on the gate dielectric layer, wherein the gate electrode comprises a first metal layer and a second metal layer , wherein the second metal layer forms a middle portion of the gate electrode having a larger height than side portions of the gate electrode formed by the first metal layer , thereby providing a stepped profile; an insulating cap layer on the top surface of the gate electrode, in contact with a portion of the gate dielectric layer, and between the pair of spacers and substantially coplanar with top surfaces of the pair of spacers, the insulating cap layer having a bottom surface on the middle and side portions of the gate electrode, wherein the insulating cap layer comprises silicon nitride; and a pair of diffusion regions disposed in the substrate, adjacent to the pair of spacers. a substrate ; a pair of spacers on a portion of the substrate; a gate dielectric layer above a portion of the substrate between the pair of spacers, the gate dielectric layer comprising hafnium oxide, wherein the gate dielectric layer is along the portion of the substrate between the pair of spacers and along sidewalls of the pair of spacers; a gate electrode on the gate dielectric layer, wherein the gate electrode comprises a first metal layer and a second metal layer , wherein the second metal layer forms a middle portion of the gate electrode having a larger height than side portions of the gate electrode formed by the first metal layer , thereby providing a stepped profile; an insulating cap layer on the top surface of the gate electrode, in contact with a portion of the gate dielectric layer, and between the pair of spacers and substantially coplanar with top surfaces of the pair of spacers, the insulating cap layer having a bottom surface on the middle and side portions of the gate electrode, wherein the insulating cap layer comprises silicon nitride; and a pair of diffusion regions disposed in the substrate, adjacent to the pair of spacers.
A method of forming a charge balance region in an active semiconductor device, the method comprising: forming an epitaxial region comprising material of a first conductivity type on an upper surface of a substrate of the semiconductor device, the epitaxial region including free charge carriers of a first charge type; forming a plurality of recessed features at least partially through the epitaxial region; forming an insulating layer on the bottom and sidewalls of each of at least a subset of the plurality of the recessed features ; depositing a film on at least a portion of the insulating layer on the bottom and sidewalls of the recessed features using atomic layer deposition, the film having a net static charge of a second charge type associated therewith, the second charge type being opposite in polarity to the first charge type; and performing thermal processing in such a manner that at least a portion of the free charge carriers in the epitaxial region migrate towards the deposited film to thereby form the charge balance region in the epitaxial region proximate the recessed features, the charge balance region following a contour of the recessed features . forming an epitaxial region comprising material of a first conductivity type on an upper surface of a substrate of the semiconductor device, the epitaxial region including free charge carriers of a first charge type; forming a plurality of recessed features at least partially through the epitaxial region; forming an insulating layer on the bottom and sidewalls of each of at least a subset of the plurality of the recessed features ; depositing a film on at least a portion of the insulating layer on the bottom and sidewalls of the recessed features using atomic layer deposition, the film having a net static charge of a second charge type associated therewith, the second charge type being opposite in polarity to the first charge type; and performing thermal processing in such a manner that at least a portion of the free charge carriers in the epitaxial region migrate towards the deposited film to thereby form the charge balance region in the epitaxial region proximate the recessed features, the charge balance region following a contour of the recessed features .
A conductive piezoelectric multi-layer film , comprising: a first coating layer ; a second coating layer ; a conductive layer ; and a piezoelectric film , wherein the first coating layer , the second coating layer , and the conductive layer are stacked in this order on at least one surface of the piezoelectric film , the piezoelectric film has a refractive index of 1.30 or greater and 1.50 or less, the first coating layer has a refractive index of 1.45 or greater and less than 1.60, the second coating layer has a refractive index of 1.60 or greater and less than 1.80, the conductive layer has a refractive index of 1.80 or greater and 2.20 or less, and the refractive index of the first coating layer is higher than the refractive index of the piezoelectric film . a first coating layer ; a second coating layer ; a conductive layer ; and a piezoelectric film , wherein the first coating layer , the second coating layer , and the conductive layer are stacked in this order on at least one surface of the piezoelectric film , the piezoelectric film has a refractive index of 1.30 or greater and 1.50 or less, the first coating layer has a refractive index of 1.45 or greater and less than 1.60, the second coating layer has a refractive index of 1.60 or greater and less than 1.80, the conductive layer has a refractive index of 1.80 or greater and 2.20 or less, and the refractive index of the first coating layer is higher than the refractive index of the piezoelectric film .
Sandal pentanol for use in the topical treatment of a skin, scalp or mucosal disease by promoting an immune-stimulating activity which is mediated by dermcidin wherein the disease is selected from the group consisting of psoriasis, rosacea, folliculitis, skin rashes.