A solid-state imaging device adapted to encrypt data, the solid-state imaging device comprising: a sensor die comprising an array of imaging pixels formed on a first side of the sensor die and first wiring layers formed on a second side of the sensor die , wherein at least one of the imaging pixels is configured to generate specific signals; a logic die comprising second wiring layers formed on a first side of the logic die ; and an encryption processor on the logic die configured to generate encrypted data using the specific signals, wherein the first side of the logic die is mounted adjacent to the second side of the sensor die and the first wiring layers electrically connect to the second wiring layers , wherein the at least one of the imaging pixels, the encryption processor, and a connecting conductor in which the specific signals pass through from the at least one of the imaging pixels to the encryption processor are located interior to the solid-state imaging device ; further comprising a specific value calculator on the logic die and arranged to calculate a specific value from the specific signals and provide the specific value to the encryption processor, wherein the encryption processor is configured to generate the encrypted data using the specific value, and wherein the specific signals are: dark current signals that include dark current from at least one photodiode located in an optically black region of the array of imaging pixels, wherein the optically black region of the array of imaging pixels is light-shielded. a sensor die comprising an array of imaging pixels formed on a first side of the sensor die and first wiring layers formed on a second side of the sensor die , wherein at least one of the imaging pixels is configured to generate specific signals; a logic die comprising second wiring layers formed on a first side of the logic die ; and an encryption processor on the logic die configured to generate encrypted data using the specific signals, wherein the first side of the logic die is mounted adjacent to the second side of the sensor die and the first wiring layers electrically connect to the second wiring layers , wherein the at least one of the imaging pixels, the encryption processor, and a connecting conductor in which the specific signals pass through from the at least one of the imaging pixels to the encryption processor are located interior to the solid-state imaging device ; further comprising a specific value calculator on the logic die and arranged to calculate a specific value from the specific signals and provide the specific value to the encryption processor, wherein the encryption processor is configured to generate the encrypted data using the specific value, and wherein the specific signals are: dark current signals that include dark current from at least one photodiode located in an optically black region of the array of imaging pixels, wherein the optically black region of the array of imaging pixels is light-shielded. dark current signals that include dark current from at least one photodiode located in an optically black region of the array of imaging pixels, wherein the optically black region of the array of imaging pixels is light-shielded. <EOS>