A method for manufacturing a CMOS image sensor encapsulation structure , comprising: forming a blind hole in a combined layer formed by a first insulating layer and a wafer , wherein the blind hole passes through the first insulating layer with its hole bottom located on the wafer , a surface of the first insulating layer is provided with a micro convex lens , with the surface facing away from the wafer ; areas where the micro convex lens and the blind hole are located are a first installation area and a second installation area , respectively, the first installation area and the second installation area do not overlap each other; forming a second insulating layer on a hole wall of the blind hole , filling an electrically conductive material in the blind hole having the second insulating layer , and making a conductor in the combined layer extend to the surface of the first insulating layer to be electrically connected to the electrically conductive material , with the conductor in signal connection with the micro convex lens and an IC; fixing a transparent substrate material on the surface of the first insulating layer , with the surface having the micro convex lens , and providing the transparent substrate material in the first installation area ; forming a dummy wafer on a surface of the transparent substrate material , and thinning the wafer by grinding such that the electrically conductive material in the blind hole is exposed; and forming a third insulating layer on a surface of the wafer that is thinned by grinding and exposing the electrically conductive material , forming metal projections on the third insulating layer and electrically connecting the metal projections to the electrically conductive material , fixing solder balls on the metal projections , and after removing the dummy wafer , forming a protection glue layer on the first insulating layer , wherein the protection glue layer is located in the second installation area . forming a blind hole in a combined layer formed by a first insulating layer and a wafer , wherein the blind hole passes through the first insulating layer with its hole bottom located on the wafer , a surface of the first insulating layer is provided with a micro convex lens , with the surface facing away from the wafer ; areas where the micro convex lens and the blind hole are located are a first installation area and a second installation area , respectively, the first installation area and the second installation area do not overlap each other; forming a second insulating layer on a hole wall of the blind hole , filling an electrically conductive material in the blind hole having the second insulating layer , and making a conductor in the combined layer extend to the surface of the first insulating layer to be electrically connected to the electrically conductive material , with the conductor in signal connection with the micro convex lens and an IC; fixing a transparent substrate material on the surface of the first insulating layer , with the surface having the micro convex lens , and providing the transparent substrate material in the first installation area ; forming a dummy wafer on a surface of the transparent substrate material , and thinning the wafer by grinding such that the electrically conductive material in the blind hole is exposed; and forming a third insulating layer on a surface of the wafer that is thinned by grinding and exposing the electrically conductive material , forming metal projections on the third insulating layer and electrically connecting the metal projections to the electrically conductive material , fixing solder balls on the metal projections , and after removing the dummy wafer , forming a protection glue layer on the first insulating layer , wherein the protection glue layer is located in the second installation area . <EOS>