A vertical cavity surface emitting laser device that emits light orthogonally in relation to a substrate, the vertical cavity surface emitting laser device comprising: a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich therebetween the resonator structure and including a plurality of pairs of a first layer and a second layer , the first layer and the second layer having different refractive indexes, wherein the second layer has higher thermal conductivity than the first layer , the semiconductor multilayer reflectors include a first partial reflector (103 2 ) and a second partial reflector (103 3 ), the first partial reflector (103 2 ) including at least one of the pairs, in which the second layer is greater in optical thickness than the first layer , the second partial reflector (103 3 ) being disposed between the first partial reflector (103 2 ) and the resonator structure, and including at least one of the pairs, in which each of the first layer and the second layer is less in the optical thickness than the second layer of the first partial reflector (103 2 ), the optical thickness of each of the first layer and the second layer of the second partial reflector (103 3 ) is 1/4 of an oscillation wavelength, and in the first partial reflector (103 2 ), the optical thickness of the first layer is 1/4 of the oscillation wavelength, and the optical thickness of the second layer is (2n·+ 1)λ/4 where λ is the oscillation wavelength and n is an integer equal to or greater than 1, characterized in that : the first partial reflector (103 2 ) and the second partial reflector (103 3 ) each consist of layers consisting of AlGaAs material or AlAs. a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich therebetween the resonator structure and including a plurality of pairs of a first layer and a second layer , the first layer and the second layer having different refractive indexes, wherein the second layer has higher thermal conductivity than the first layer , the semiconductor multilayer reflectors include a first partial reflector (103 2 ) and a second partial reflector (103 3 ), the first partial reflector (103 2 ) including at least one of the pairs, in which the second layer is greater in optical thickness than the first layer , the second partial reflector (103 3 ) being disposed between the first partial reflector (103 2 ) and the resonator structure, and including at least one of the pairs, in which each of the first layer and the second layer is less in the optical thickness than the second layer of the first partial reflector (103 2 ), the optical thickness of each of the first layer and the second layer of the second partial reflector (103 3 ) is 1/4 of an oscillation wavelength, and in the first partial reflector (103 2 ), the optical thickness of the first layer is 1/4 of the oscillation wavelength, and the optical thickness of the second layer is (2n·+ 1)λ/4 where λ is the oscillation wavelength and n is an integer equal to or greater than 1, characterized in that : the first partial reflector (103 2 ) and the second partial reflector (103 3 ) each consist of layers consisting of AlGaAs material or AlAs. <EOS>