A monolithic LED chip , comprising: a plurality of sub-LEDs (62a-c) flip-chip mounted on a submount and electrically insulated from said submount , wherein said sub-LEDs (62a-c) are formed from a single junction LED grown on a growth substrate, and each sub-LED (62a-c) comprises a portion of the growth substrate; an insulator layer between said sub-LEDs (62a-c) and said submount ; electrically conductive and electrically insulating features serially interconnecting at least some of said sub-LEDs (62a-c), wherein said electrically conductive features comprise bottom contacts (72a-c) that contact bottom surfaces of said sub-LEDs (62a-c); and mirror contacts between respective ones of the bottom contacts (72a-c) and said sub-LEDs (62a-c), wherein the mirror contacts are aligned with the light emitting openings on top surfaces of the sub-LEDs (62a-c) that are not covered by wire bond pads, traces, or insulating materials, wherein the growth substrate is discontinuous to provide physical separation between each sub-LED (62a-c) of the plurality of sub-LEDs (62a-c), characterised in that the monolithic LED chip further comprises a metal bonding layer between said insulator layer and said submount . a plurality of sub-LEDs (62a-c) flip-chip mounted on a submount and electrically insulated from said submount , wherein said sub-LEDs (62a-c) are formed from a single junction LED grown on a growth substrate, and each sub-LED (62a-c) comprises a portion of the growth substrate; an insulator layer between said sub-LEDs (62a-c) and said submount ; electrically conductive and electrically insulating features serially interconnecting at least some of said sub-LEDs (62a-c), wherein said electrically conductive features comprise bottom contacts (72a-c) that contact bottom surfaces of said sub-LEDs (62a-c); and mirror contacts between respective ones of the bottom contacts (72a-c) and said sub-LEDs (62a-c), wherein the mirror contacts are aligned with the light emitting openings on top surfaces of the sub-LEDs (62a-c) that are not covered by wire bond pads, traces, or insulating materials, wherein the growth substrate is discontinuous to provide physical separation between each sub-LED (62a-c) of the plurality of sub-LEDs (62a-c), characterised in that the monolithic LED chip further comprises a metal bonding layer between said insulator layer and said submount . electrically conductive and electrically insulating features serially interconnecting at least some of said sub-LEDs (62a-c), wherein said electrically conductive features comprise bottom contacts (72a-c) that contact bottom surfaces of said sub-LEDs (62a-c); and mirror contacts between respective ones of the bottom contacts (72a-c) and said sub-LEDs (62a-c), wherein the mirror contacts are aligned with the light emitting openings on top surfaces of the sub-LEDs (62a-c) that are not covered by wire bond pads, traces, or insulating materials, wherein the growth substrate is discontinuous to provide physical separation between each sub-LED (62a-c) of the plurality of sub-LEDs (62a-c), characterised in that the monolithic LED chip further comprises a metal bonding layer between said insulator layer and said submount . <EOS>