A semiconductor package comprising: a first semiconductor die having an upper surface and a lower surface, the first semiconductor die including input/output circuitry ; a first electrical mesh disposed on the upper surface of the first semiconductor die and conductively coupled to the circuitry included in the first semiconductor die, the first electrical mesh including: a first plurality of conductors wherein; each of the first plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining first plurality of conductors; and a second plurality of conductors , wherein: each of the second plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining second plurality of conductors; and each of the second plurality of conductors intersects and conductively couples to at least one of the first plurality of conductors; a plurality of second semiconductor dies , each of the plurality of second semiconductor dies including processor core circuitry, each of the second semiconductor dies conductively coupled to a node formed by an intersection of one of the first plurality of conductors with one of the second plurality of conductors. a first semiconductor die having an upper surface and a lower surface, the first semiconductor die including input/output circuitry ; a first electrical mesh disposed on the upper surface of the first semiconductor die and conductively coupled to the circuitry included in the first semiconductor die, the first electrical mesh including: a first plurality of conductors wherein; each of the first plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining first plurality of conductors; and a second plurality of conductors , wherein: each of the second plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining second plurality of conductors; and each of the second plurality of conductors intersects and conductively couples to at least one of the first plurality of conductors; a first plurality of conductors wherein; each of the first plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining first plurality of conductors; and a second plurality of conductors , wherein: each of the second plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining second plurality of conductors; and each of the second plurality of conductors intersects and conductively couples to at least one of the first plurality of conductors; each of the second plurality of conductors is disposed on the upper surface of the first semiconductor die and spaced apart from the remaining second plurality of conductors; and each of the second plurality of conductors intersects and conductively couples to at least one of the first plurality of conductors; a plurality of second semiconductor dies , each of the plurality of second semiconductor dies including processor core circuitry, each of the second semiconductor dies conductively coupled to a node formed by an intersection of one of the first plurality of conductors with one of the second plurality of conductors. <EOS>