A laser annealing device for laser annealing of a wafer on a wafer table , comprising: a laser light source system , comprising at least two lasers configured to output laser beams at a tunable power; a laser adjusting system in connection with the laser light source system , the laser adjusting system comprising at least two laser adjustors in one-to-one correspondence with the lasers , the laser adjusting system configured to monitor the powers of the laser beams and a position of a light spot formed by the laser beams on a surface of the wafer and to adjust a shape of the light spot and angles of incidence of the laser beams; a temperature monitoring system , configured to measure in real time a temperature at a location on the surface of the wafer at which the light spot is formed; and a central control system , in connection with each of the laser light source system , the laser adjusting system , the temperature monitoring system and the wafer table , the central control system configured to receive data from the laser light source system , the laser adjusting system , the temperature monitoring system and the wafer table and to control the laser light source system , the laser adjusting system and the wafer table , wherein each of the laser adjustors comprises a spot detection system , an energy attenuation system , a light homogenization system and a rotation and translation member which are disposed sequentially along an optical path, the spot detection system being in connection with a corresponding one of the lasers and the central control system , the rotation and translation member disposed above the wafer . a laser light source system , comprising at least two lasers configured to output laser beams at a tunable power; a laser adjusting system in connection with the laser light source system , the laser adjusting system comprising at least two laser adjustors in one-to-one correspondence with the lasers , the laser adjusting system configured to monitor the powers of the laser beams and a position of a light spot formed by the laser beams on a surface of the wafer and to adjust a shape of the light spot and angles of incidence of the laser beams; a temperature monitoring system , configured to measure in real time a temperature at a location on the surface of the wafer at which the light spot is formed; and a central control system , in connection with each of the laser light source system , the laser adjusting system , the temperature monitoring system and the wafer table , the central control system configured to receive data from the laser light source system , the laser adjusting system , the temperature monitoring system and the wafer table and to control the laser light source system , the laser adjusting system and the wafer table , wherein each of the laser adjustors comprises a spot detection system , an energy attenuation system , a light homogenization system and a rotation and translation member which are disposed sequentially along an optical path, the spot detection system being in connection with a corresponding one of the lasers and the central control system , the rotation and translation member disposed above the wafer . <EOS>