An organic semiconductor composition comprising: an organic semiconductor material; and an anti-migration agent containing at least either a compound X, which contains at least two or more groups selected from a group represented by Formula (A) and a group represented by Formula (B), or a compound Y which is represented by Formula (C); wherein: in Formula (A), each of R 1 to R 3 independently represents a hydrogen atom or a substituent; * represents a binding position; and R 1 and R 2 do not represent a hydrogen atom at the same time; in Formula (B), R 4 represents a substituent; each of R 5 to R 7 independently represents a hydrogen atom or a substituent; X represents a divalent linking group; and * represents a binding position; and in Formula (C), each of Rg and R 12 independently represents a substituent; each of R 9 to R 11 and R 13 to R 15 independently represents a hydrogen atom or a substituent; Z represents -O-, -S-, -SO-, -SO 2 -, -NR-, -PR-, -POR-, -COCO-, -NH-NH-, or -S-S-; and R represents a hydrogen atom or a substituent; characterized in that : the amount of the anti-migration agent is equal to or greater than 50 parts by mass with respect to 100 parts by mass of the organic semiconductor material. an organic semiconductor material; and an anti-migration agent containing at least either a compound X, which contains at least two or more groups selected from a group represented by Formula (A) and a group represented by Formula (B), or a compound Y which is represented by Formula (C); wherein: in Formula (A), each of R 1 to R 3 independently represents a hydrogen atom or a substituent; * represents a binding position; and R 1 and R 2 do not represent a hydrogen atom at the same time; in Formula (B), R 4 represents a substituent; each of R 5 to R 7 independently represents a hydrogen atom or a substituent; X represents a divalent linking group; and * represents a binding position; and in Formula (C), each of Rg and R 12 independently represents a substituent; each of R 9 to R 11 and R 13 to R 15 independently represents a hydrogen atom or a substituent; Z represents -O-, -S-, -SO-, -SO 2 -, -NR-, -PR-, -POR-, -COCO-, -NH-NH-, or -S-S-; and R represents a hydrogen atom or a substituent; characterized in that : the amount of the anti-migration agent is equal to or greater than 50 parts by mass with respect to 100 parts by mass of the organic semiconductor material. in Formula (A), each of R 1 to R 3 independently represents a hydrogen atom or a substituent; * represents a binding position; and R 1 and R 2 do not represent a hydrogen atom at the same time; in Formula (B), R 4 represents a substituent; each of R 5 to R 7 independently represents a hydrogen atom or a substituent; X represents a divalent linking group; and * represents a binding position; and in Formula (C), each of Rg and R 12 independently represents a substituent; each of R 9 to R 11 and R 13 to R 15 independently represents a hydrogen atom or a substituent; Z represents -O-, -S-, -SO-, -SO 2 -, -NR-, -PR-, -POR-, -COCO-, -NH-NH-, or -S-S-; and R represents a hydrogen atom or a substituent; characterized in that : the amount of the anti-migration agent is equal to or greater than 50 parts by mass with respect to 100 parts by mass of the organic semiconductor material. <EOS>