A method for manufacturing a micro-electromechanical device in a material substrate suitable for manufacturing integrated electronic components, in particular a semiconductor substrate, wherein, in the method: - a material substrate is provided, on which at least one surface structure is formed during manufacture of the device, - at least one electronic component , comprising a plurality of component elements, is formed in the material substrate using process steps of a conventional method for manufacturing integrated electronic components, - a component element , selectively defining the position of the electronic component on the material substrate , is formed by a first etching stop material acting as an etching stop for etching the material substrate or a material layer disposed on the material substrate , wherein, in a self-adjusting CMOS process, this component element serves for manufacturing further component elements of the electronic component , - from this etching stop material, together with the formation of the component element of the electronic component on the material substrate , a bounding region , additionally comprising a partial section, is formed along at least a partial section of an edge of the surface structure and comprises a distance, defined in the manufacturing process of the first etching stop material, to the component element of the electronic component comprising the first etching stop material, and - the material substrate thus formed is selectively etched for forming the surface structure , in that an edge the bounding region defines, on the material substrate , the position of the surface structure to be formed and thus the surface structure and the electronic component are arranged spaced apart from each other at a distance corresponding to the distance between the component element comprising the first etching stop material and the bounding region comprising the first etching stop material. - a material substrate is provided, on which at least one surface structure is formed during manufacture of the device, - at least one electronic component , comprising a plurality of component elements, is formed in the material substrate using process steps of a conventional method for manufacturing integrated electronic components, - a component element , selectively defining the position of the electronic component on the material substrate , is formed by a first etching stop material acting as an etching stop for etching the material substrate or a material layer disposed on the material substrate , wherein, in a self-adjusting CMOS process, this component element serves for manufacturing further component elements of the electronic component , - from this etching stop material, together with the formation of the component element of the electronic component on the material substrate , a bounding region , additionally comprising a partial section, is formed along at least a partial section of an edge of the surface structure and comprises a distance, defined in the manufacturing process of the first etching stop material, to the component element of the electronic component comprising the first etching stop material, and - the material substrate thus formed is selectively etched for forming the surface structure , in that an edge the bounding region defines, on the material substrate , the position of the surface structure to be formed and thus the surface structure and the electronic component are arranged spaced apart from each other at a distance corresponding to the distance between the component element comprising the first etching stop material and the bounding region comprising the first etching stop material. <EOS>