A light emitting device comprising: a base ; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base and configured to reflect the first light upwards; a phosphor member having a lower surface onto which the first light is irradiated and an upper surface serving as a light extraction surface; a light shielding member surrounding lateral surfaces of the phosphor member , wherein: the first light reflecting member comprises a first region onto which a first portion of the first light is irradiated, and a second region onto which another portion of the first light is irradiated, the second region being positioned farther from the first semiconductor laser element than the first region , characterised in that : said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element , and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member , to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member . a base ; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base and configured to reflect the first light upwards; a phosphor member having a lower surface onto which the first light is irradiated and an upper surface serving as a light extraction surface; a light shielding member surrounding lateral surfaces of the phosphor member , wherein: the first light reflecting member comprises a first region onto which a first portion of the first light is irradiated, and a second region onto which another portion of the first light is irradiated, the second region being positioned farther from the first semiconductor laser element than the first region , characterised in that : said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element , and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member , to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member . said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element , and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member , to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member . <EOS>