An organic light emitting diode display comprising: a substrate ; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor (T2) coupled to the scan line and the data line ; a driving thin film transistor (T1) coupled to a switching drain electrode (D2) of the switching thin film transistor (T2); a first gate insulating layer covering the driving semiconductor layer ; and an organic light emitting diode (OLED) coupled to a driving drain electrode (D1) of the driving thin film transistor (T1), wherein a driving semiconductor layer of the driving thin film transistor (T1) is bent and in a plane substantially parallel to a surface of the substrate , characterized by further comprising a storage capacitor (Cst) comprising: a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer ; a second insulating layer covering the first storage capacitor plate ; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor (T1) comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer , wherein the driving gate electrode is the same plate as the first storage capacitor plate . a substrate ; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor (T2) coupled to the scan line and the data line ; a driving thin film transistor (T1) coupled to a switching drain electrode (D2) of the switching thin film transistor (T2); a first gate insulating layer covering the driving semiconductor layer ; and an organic light emitting diode (OLED) coupled to a driving drain electrode (D1) of the driving thin film transistor (T1), wherein a driving semiconductor layer of the driving thin film transistor (T1) is bent and in a plane substantially parallel to a surface of the substrate , characterized by further comprising a storage capacitor (Cst) comprising: a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer ; a second insulating layer covering the first storage capacitor plate ; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor (T1) comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer , wherein the driving gate electrode is the same plate as the first storage capacitor plate . a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer ; a second insulating layer covering the first storage capacitor plate ; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor (T1) comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer , wherein the driving gate electrode is the same plate as the first storage capacitor plate . <EOS>