An electronic circuit (103, fig. 21) comprising: an input terminal ; an output terminal ; a first supply rail ; a second supply rail ; a first field effect transistor (Q1), FET, of a first type and having respective gate (G), source (S) and drain (D) terminals; a second FET (Q2) of said first type and having respective gate (G), source (S) and drain (D) terminals; a third FET (Q3) of said first type and having respective gate (G), source (S) and drain (D) terminals; and a fourth FET (Q4) of said first type and having respective gate (G), source (S) and drain (D) terminals, wherein the source (S) of the first FET (Q1) is connected to the first supply rail , the drain (D) of the first FET (Q1) and the source (S) of the second FET (Q2) are connected to the output terminal , the drain (D) of the second FET (Q2) is connected to the second supply rail , the gate (G) of the third FET (Q3) and the gate (G) of the fourth FET (Q4) are connected to the input terminal , and the drain (D) of the third FET (Q3) is connected to the second supply rail , characterised in that the electronic circuit further comprises a first load resistor (R1) and a second load resistor (R2), the first load resistor (R1) is connected between the first supply rail and the source (S) of the third FET (Q3), the second load resistor (R2) is connected between the drain (D) of the fourth FET (Q4) and the second supply rail , the gate (G) of the second FET (Q2) is connected to a node between the source (S) of the third FET (Q3) and the first load resistor (R1) such that a voltage at the source of the third FET is applied to the gate of the second FET, and the gate (G) of the first FET (Q1) is connected to a node between the drain (D) of the fourth FET (Q4) and the second load resistor (R2) such that a voltage at the drain of the fourth FET is applied to the gate of the first FET. an input terminal ; an output terminal ; a first supply rail ; a second supply rail ; a first field effect transistor (Q1), FET, of a first type and having respective gate (G), source (S) and drain (D) terminals; a second FET (Q2) of said first type and having respective gate (G), source (S) and drain (D) terminals; a third FET (Q3) of said first type and having respective gate (G), source (S) and drain (D) terminals; and a fourth FET (Q4) of said first type and having respective gate (G), source (S) and drain (D) terminals, wherein the source (S) of the first FET (Q1) is connected to the first supply rail , the drain (D) of the first FET (Q1) and the source (S) of the second FET (Q2) are connected to the output terminal , the drain (D) of the second FET (Q2) is connected to the second supply rail , the gate (G) of the third FET (Q3) and the gate (G) of the fourth FET (Q4) are connected to the input terminal , and the drain (D) of the third FET (Q3) is connected to the second supply rail , characterised in that the electronic circuit further comprises a first load resistor (R1) and a second load resistor (R2), the first load resistor (R1) is connected between the first supply rail and the source (S) of the third FET (Q3), the second load resistor (R2) is connected between the drain (D) of the fourth FET (Q4) and the second supply rail , the gate (G) of the second FET (Q2) is connected to a node between the source (S) of the third FET (Q3) and the first load resistor (R1) such that a voltage at the source of the third FET is applied to the gate of the second FET, and the gate (G) of the first FET (Q1) is connected to a node between the drain (D) of the fourth FET (Q4) and the second load resistor (R2) such that a voltage at the drain of the fourth FET is applied to the gate of the first FET. <EOS>