A vertical cavity surface emitting laser device , comprising: a first reflection mirror that reflects light of a specific wavelength; a second reflection mirror that reflects light of the wavelength; a first semiconductor layer that is disposed between the first reflection mirror and the second reflection mirror and is formed of a semiconductor material having a first conductivity type; a second semiconductor layer that is disposed between the first reflection mirror and the second reflection mirror and is formed of a semiconductor material having a second conductivity type; a tunnel junction layer that is disposed between the first reflection mirror and the second reflection mirror, a highly doped layer of the first conductivity type and a highly doped layer of the second conductivity type being joined together in the tunnel junction layer, the tunnel junction layer having an inner peripheral region on an inner peripheral side when viewed from a direction perpendicular to a layer surface and an outer peripheral region surrounding the inner peripheral region, the inner peripheral region being formed of a material containing Al, the outer peripheral region being formed of a material containing an Al oxide; and a light-emitting layer that is disposed between the first reflection mirror and the second reflection mirror and emits light by carrier recombination, the vertical cavity surface emitting laser device having a mesa structure that has a current injection region where a current passing through the inner peripheral region and flowing into the light-emitting layer concentrates; wherein the tunnel junction layer has an end surface (P) that is an outer peripheral surface along the direction of the outer peripheral region, the mesa structure has a side surface (S) that is an outer peripheral surface along the direction, and the end surface is spaced apart from the side surface and displaced towards the inner peripheral region. a first reflection mirror that reflects light of a specific wavelength; a second reflection mirror that reflects light of the wavelength; a first semiconductor layer that is disposed between the first reflection mirror and the second reflection mirror and is formed of a semiconductor material having a first conductivity type; a second semiconductor layer that is disposed between the first reflection mirror and the second reflection mirror and is formed of a semiconductor material having a second conductivity type; a tunnel junction layer that is disposed between the first reflection mirror and the second reflection mirror, a highly doped layer of the first conductivity type and a highly doped layer of the second conductivity type being joined together in the tunnel junction layer, the tunnel junction layer having an inner peripheral region on an inner peripheral side when viewed from a direction perpendicular to a layer surface and an outer peripheral region surrounding the inner peripheral region, the inner peripheral region being formed of a material containing Al, the outer peripheral region being formed of a material containing an Al oxide; and a light-emitting layer that is disposed between the first reflection mirror and the second reflection mirror and emits light by carrier recombination, the vertical cavity surface emitting laser device having a mesa structure that has a current injection region where a current passing through the inner peripheral region and flowing into the light-emitting layer concentrates; wherein the tunnel junction layer has an end surface (P) that is an outer peripheral surface along the direction of the outer peripheral region, the mesa structure has a side surface (S) that is an outer peripheral surface along the direction, and the end surface is spaced apart from the side surface and displaced towards the inner peripheral region. <EOS>