A touch screen-integrated display device comprising: a plurality of gate lines (GL) disposed in a first direction on a substrate ; a plurality of data lines (DL) disposed in a second direction on the substrate , the second direction different from the first direction; a touch sensing line (SL) disposed in the second direction, the touch sensing line (SL) disposed between the plurality of data lines (DL) on the substrate ; a plurality of subpixel areas (SP) defined by the plurality of gate lines (GL), the plurality of data lines (DL), and the touch sensing line (SL); a gate electrode of a transistor (TFT) provided in a subpixel area (SP) from the plurality of subpixel areas (SP), the gate electrode connected to one of the plurality of gate lines (GL); an active layer on the gate electrode ; a source electrode and a drain electrode of the transistor (TFT) on the active layer ; a gate insulator between the gate electrode and the active layer ; a pixel electrode including a first portion and a second portion, the first portion of the pixel electrode directly on the drain electrode and the second portion of the pixel electrode directly on the gate insulator ; and a sensing contact part provided on the gate insulator and connected to the touch sensing line (SL), the sensing contact part including a first sensing contact pattern and a second sensing contact pattern , and wherein the second sensing contact pattern comprises a same material as the pixel electrode ; the touch screen-integrated display device further comprising: a protective layer on the gate insulator, the protective layer including a contact hole (C) that exposes a portion of the sensing contact part ; and a common electrode on the protective layer , the common electrode in contact with the portion of the sensing contact part that is exposed via the contact hole (C). a plurality of gate lines (GL) disposed in a first direction on a substrate ; a plurality of data lines (DL) disposed in a second direction on the substrate , the second direction different from the first direction; a touch sensing line (SL) disposed in the second direction, the touch sensing line (SL) disposed between the plurality of data lines (DL) on the substrate ; a plurality of subpixel areas (SP) defined by the plurality of gate lines (GL), the plurality of data lines (DL), and the touch sensing line (SL); a gate electrode of a transistor (TFT) provided in a subpixel area (SP) from the plurality of subpixel areas (SP), the gate electrode connected to one of the plurality of gate lines (GL); an active layer on the gate electrode ; a source electrode and a drain electrode of the transistor (TFT) on the active layer ; a gate insulator between the gate electrode and the active layer ; a pixel electrode including a first portion and a second portion, the first portion of the pixel electrode directly on the drain electrode and the second portion of the pixel electrode directly on the gate insulator ; and a sensing contact part provided on the gate insulator and connected to the touch sensing line (SL), the sensing contact part including a first sensing contact pattern and a second sensing contact pattern , and wherein the second sensing contact pattern comprises a same material as the pixel electrode ; the touch screen-integrated display device further comprising: a protective layer on the gate insulator, the protective layer including a contact hole (C) that exposes a portion of the sensing contact part ; and a common electrode on the protective layer , the common electrode in contact with the portion of the sensing contact part that is exposed via the contact hole (C). a protective layer on the gate insulator, the protective layer including a contact hole (C) that exposes a portion of the sensing contact part ; and a common electrode on the protective layer , the common electrode in contact with the portion of the sensing contact part that is exposed via the contact hole (C). <EOS>