An infrared sensor comprising: a base substrate ; a bolometer infrared receiver ; a first beam ; a second beam ; first wiring ; second wiring ; and an infrared reflection film , wherein each of the first beam and the second beam has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate , and is physically joined to the infrared receiver at the separated portion , the infrared receiver is supported by the first beam and the second beam to be away from the base substrate , the infrared receiver includes a lower electrode , an upper electrode , and a resistance change film including a resistance change material an electrical resistance of which changes with temperature, the resistance change film is sandwiched by the lower electrode and the upper electrode in a thickness direction, each of the lower electrode and the upper electrode is electrically connected to the resistance change film , the lower electrode and the upper electrode are electrically connected to the first wiring and the second wiring , respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and the infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver , characterized in that the lower electrode has a first line-and-space structure, the upper electrode has a second line-and-space structure, and an alignment direction (AD) of the first line-and-space structure and an alignment direction (AD) of the second line-and-space structure are different from each other in plan view. a base substrate ; a bolometer infrared receiver ; a first beam ; a second beam ; first wiring ; second wiring ; and an infrared reflection film , wherein each of the first beam and the second beam has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate , and is physically joined to the infrared receiver at the separated portion , the infrared receiver is supported by the first beam and the second beam to be away from the base substrate , the infrared receiver includes a lower electrode , an upper electrode , and a resistance change film including a resistance change material an electrical resistance of which changes with temperature, the resistance change film is sandwiched by the lower electrode and the upper electrode in a thickness direction, each of the lower electrode and the upper electrode is electrically connected to the resistance change film , the lower electrode and the upper electrode are electrically connected to the first wiring and the second wiring , respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and the infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver , characterized in that the lower electrode has a first line-and-space structure, the upper electrode has a second line-and-space structure, and an alignment direction (AD) of the first line-and-space structure and an alignment direction (AD) of the second line-and-space structure are different from each other in plan view. <EOS>