Method for preparing an organic electronic device comprising the steps: a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer ; and bb) an organic semiconductor layer having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor layer and the light absorption layer is selected from 0 to 500 nm ; b) providing a light source ; c) reducing the conductivity of the organic semiconductor layer by an irradiation treatment of the light absorption layer by exposing it to light from the light source ; wherein the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer and wherein the conductivity of the organic semiconductor is essentially unchanged compared to the conductivity prior to the irradiation treatment in areas which are not arranged in the distance of 0 to 500 nm measured from the surface of the light absorption layer facing the organic semiconductor layer in the direction of the beam of the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 ; and the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer . a) providing a layer stack applicable for preparing the organic electronic device, the layer stack comprising: aa) a light absorption layer ; and bb) an organic semiconductor layer having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor layer and the light absorption layer is selected from 0 to 500 nm ; aa) a light absorption layer ; and bb) an organic semiconductor layer having a conductivity of at least 10 -7 S/cm and a thickness of 0.1 to 100 nm; wherein the distance between the organic semiconductor layer and the light absorption layer is selected from 0 to 500 nm ; b) providing a light source ; c) reducing the conductivity of the organic semiconductor layer by an irradiation treatment of the light absorption layer by exposing it to light from the light source ; wherein the absorption of the light absorption layer with respect to the light irradiated from the light source is higher than the respective absorption of the organic semiconductor layer and wherein the conductivity of the organic semiconductor is essentially unchanged compared to the conductivity prior to the irradiation treatment in areas which are not arranged in the distance of 0 to 500 nm measured from the surface of the light absorption layer facing the organic semiconductor layer in the direction of the beam of the light source; wherein the irradiation treatment is uniform with respect to a surface area of the layer stack of at least 1 cm 2 ; and the duration of the irradiation treatment is 10 ms or less and the energy density of the irradiation treatment is from 0.1 to 20 J/cm 2 at the position of the light absorption layer . <EOS>