A semiconductor light emitting device, comprising: a semiconductor layer including a light emitting layer , the semiconductor layer having a first surface and a second surface opposite to the first surface ; a p-side electrode provided on the semiconductor layer ; an n-side electrode provided on the semiconductor layer , the n-side electrode having a corner and a plurality of straight portions , the plurality of straight portions extending in different directions, the corner connecting the plurality of straight portions and not being in contact with the semiconductor layer , the straight portions of the n-side electrode being in contact with the semiconductor layer ; a p-side interconnect unit provided on the second surface side to be connected to the p-side electrode ; an n-side interconnect unit provided on the second surface side to be connected to the n-side electrode ; and a first insulating film being provided between the semiconductor layer and the corner of the n-side electrode , wherein the n-side de electrode has a contact portion provided in one of the straight portions to protrude in a width direction of the straight portion to be connected to the n-side interconnect unit ; characterized in that : the semiconductor light emitting device further comprises: a resin layer provided between the p-side interconnect unit and the n-side interconnect unit , the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer , and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed. a semiconductor layer including a light emitting layer , the semiconductor layer having a first surface and a second surface opposite to the first surface ; a p-side electrode provided on the semiconductor layer ; an n-side electrode provided on the semiconductor layer , the n-side electrode having a corner and a plurality of straight portions , the plurality of straight portions extending in different directions, the corner connecting the plurality of straight portions and not being in contact with the semiconductor layer , the straight portions of the n-side electrode being in contact with the semiconductor layer ; a p-side interconnect unit provided on the second surface side to be connected to the p-side electrode ; an n-side interconnect unit provided on the second surface side to be connected to the n-side electrode ; and a first insulating film being provided between the semiconductor layer and the corner of the n-side electrode , wherein the n-side de electrode has a contact portion provided in one of the straight portions to protrude in a width direction of the straight portion to be connected to the n-side interconnect unit ; characterized in that : the semiconductor light emitting device further comprises: a resin layer provided between the p-side interconnect unit and the n-side interconnect unit , the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer , and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed. a resin layer provided between the p-side interconnect unit and the n-side interconnect unit , the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer , and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed. <EOS>