mhurhangee/patent-ind-claim-en huggingface dataset:
A high-strength hot-dip galvanized steel sheet having a tensile strength of 980 MPa or more and having a chemical composition comprising, in mass%: C: 0.050% to 0.130%; Si: 0.010% to 1.00%; Mn: 1.50% to 3.50%; P: 0.10% or less; S: 0.010% or less; N: 0.010% or less; O: 0.010% or less; sol. AI: 0.001% to 1.0%; Ti: 0.005% to 0.20%; B: 0.0005% to 0.010%; Cr + 2 × Mo: 0.10 to 1.50%; and a balance consisting of Fe and inevitable impurities, wherein the chemical composition optionally comprises, in place of a part of Fe, at least one of: V: 0.001% to 1.00%; Nb: 0.001% to 0.200%; Ni: 0.001% to 1.00%; Cu: 0.001% to 1.00%; Co: 0.001% to 1.00%; W: 0.001% to 1.00%; Sn: 0.001% to 1.00%; Sb: 0.001% to 0.50%; Ca: 0.0001% to 0.0100%; Mg: 0.0001% to 0.0100%; Ce: 0.0001% to 0.0100%; Zr: 0.0001% to 0.0100%; La: 0.0001% to 0.0100%; Hf: 0.0001% to 0.0100%; Bi: 0.0001% to 0.0100%; and misch metal: 0.0001% to 0.0100%; wherein a steel structure at a part in a thickness range from one eighth to three eighths around one fourth of a thickness of the steel sheet from a surface of the steel sheet comprises, in area%: ferrite: 1 to 50%; martensite: 20 to 70%; residual austenite: 0 to 5%; pearlite: 0 to 5%; MA and cementite having 0.2 μm or more grain size in total: 0 to 5%; and a balance in a form of bainite, a number density of the MA or cementite having 0.2 μm or more grain size and isolated in ferrite or bainite grains is 100 pcs/1000 μm 2 or less, and an average hardness of martensite is in a range from 330 Hv to 500 Hv, wherein the tensile strength, the area% of the steel structure, the number density of the MA or cementite, and the average hardness of martensite are measured in accordance with the description, respectively. C: 0.050% to 0.130%; Si: 0.010% to 1.00%; Mn: 1.50% to 3.50%; P: 0.10% or less; S: 0.010% or less; N: 0.010% or less; O: 0.010% or less; sol. AI: 0.001% to 1.0%; Ti: 0.005% to 0.20%; B: 0.0005% to 0.010%; Cr + 2 × Mo: 0.10 to 1.50%; and a balance consisting of Fe and inevitable impurities, V: 0.001% to 1.00%; Nb: 0.001% to 0.200%; Ni: 0.001% to 1.00%; Cu: 0.001% to 1.00%; Co: 0.001% to 1.00%; W: 0.001% to 1.00%; Sn: 0.001% to 1.00%; Sb: 0.001% to 0.50%; Ca: 0.0001% to 0.0100%; Mg: 0.0001% to 0.0100%; Ce: 0.0001% to 0.0100%; Zr: 0.0001% to 0.0100%; La: 0.0001% to 0.0100%; Hf: 0.0001% to 0.0100%; Bi: 0.0001% to 0.0100%; and misch metal: 0.0001% to 0.0100%; ferrite: 1 to 50%; martensite: 20 to 70%; residual austenite: 0 to 5%; pearlite: 0 to 5%; MA and cementite having 0.2 μm or more grain size in total: 0 to 5%; and a balance in a form of bainite, a number density of the MA or cementite having 0.2 μm or more grain size and isolated in ferrite or bainite grains is 100 pcs/1000 μm 2 or less, and an average hardness of martensite is in a range from 330 Hv to 500 Hv, wherein the tensile strength, the area% of the steel structure, the number density of the MA or cementite, and the average hardness of martensite are measured in accordance with the description, respectively.
Process comprising the steps of a) transurethanizing a polyether polyurethane with at least one low-molecular-weight alcohol having at least 2 hydroxyl groups per molecule and a molecular weight of not more than 500 g/mol, forming polyether polyols and low-molecular-weight urethanes; and b) enzymatically cleaving the low-molecular-weight urethanes formed in process step a), with liberation of at least one amine and the at least one low-molecular-weight alcohol used in process step a). a) transurethanizing a polyether polyurethane with at least one low-molecular-weight alcohol having at least 2 hydroxyl groups per molecule and a molecular weight of not more than 500 g/mol, forming polyether polyols and low-molecular-weight urethanes; and b) enzymatically cleaving the low-molecular-weight urethanes formed in process step a), with liberation of at least one amine and the at least one low-molecular-weight alcohol used in process step a).
A thermal insulation assembly intended to form or cover, in particular from the outside, a wall of a building, comprising: - a plurality of insulating panels each having a plate shape with two opposite parallel slices, each of the panels comprising a porous material resistant to compression and a gas-tight barrier envelope , closed under vacuum, which encloses the porous material, the panels being distributed in at least one layer of panels which defines an outer face (F2) having a determined surface; - a thermal protection layer comprising at least one latent heat storage material distributed throughout the thermal protection layer; wherein the thermal protection layer has an inner face directly opposite to the layer of panels and an outer face , so that the temperature of said inner face can be lower than the temperature of the outer face of the thermal protection layer when the thermal insulation assembly is subjected to a rise in temperature on the outer side, characterised in that it includes positioning members (5', P1, P2; 5, 6) which are part of a rigid frame and allowing to distribute the insulating panels ; and in that the thermal protection layer covers said outer face (F2) of the layer of the panels and has a thickness (e2) less than or equal to the thickness (e1) of each of the insulating panels of said layer of panels, the covering of said outer face of the layer of panels with the thermal protection layer being continuous and/or such that the thermal protection layer extends over a surface at least equal to said determined surface. - a plurality of insulating panels each having a plate shape with two opposite parallel slices, each of the panels comprising a porous material resistant to compression and a gas-tight barrier envelope , closed under vacuum, which encloses the porous material, the panels being distributed in at least one layer of panels which defines an outer face (F2) having a determined surface; - a thermal protection layer comprising at least one latent heat storage material distributed throughout the thermal protection layer; wherein the thermal protection layer has an inner face directly opposite to the layer of panels and an outer face , so that the temperature of said inner face can be lower than the temperature of the outer face of the thermal protection layer when the thermal insulation assembly is subjected to a rise in temperature on the outer side, characterised in that it includes positioning members (5', P1, P2; 5, 6) which are part of a rigid frame and allowing to distribute the insulating panels ; and in that the thermal protection layer covers said outer face (F2) of the layer of the panels and has a thickness (e2) less than or equal to the thickness (e1) of each of the insulating panels of said layer of panels, the covering of said outer face of the layer of panels with the thermal protection layer being continuous and/or such that the thermal protection layer extends over a surface at least equal to said determined surface.
A process for producing ethanol by anaerobic fermentation of a synthesis gas, characterized in that : • said syngas is produced by the thermal conversion at high temperature, above 1000°C, of a feed comprising municipal solid waste (MSW), agricultural waste or derivatives thereof such as refused derived fuel (RDF) or even industrial waste such as non-recyclable plastic waste or a combination thereof, and • further hydrogen is added to said syngas, produced by electrolysis so as to balance the H 2 /CO ratio to a value equal to at least 2,0 ÷ 2,2 in volume, thus maximizing the conversion of the organic components in the fermentation step so as to avoid the emission of CO 2 into the atmosphere, and wherein said process comprises the following steps: • High temperature conversion of the waste with production of raw syngas ; • Production of H 2 and O 2 through electrolysis ; • Purification of the raw syngas by a purification unit which acts on two pressure levels , the purpose of which is the removal of particulate, metals, chlorides, ammonia, COS, and H 2 S ; • Fermentation of the purified syngas for producing raw bioethanol, after the addition of all or part of the hydrogen produced by electrolysis for achieving the optimal H 2 /CO ratio required for the fermentation reactions ; • Partial or total conversion of the residual carbon dioxide present in the purge gas outcoming from the fermentation into methane ; • Separation of the methane produced by unconverted carbon dioxide, and recycling of all or part of the methane recovered and all the CO 2 separated to the thermal conversion step . • said syngas is produced by the thermal conversion at high temperature, above 1000°C, of a feed comprising municipal solid waste (MSW), agricultural waste or derivatives thereof such as refused derived fuel (RDF) or even industrial waste such as non-recyclable plastic waste or a combination thereof, and • further hydrogen is added to said syngas, produced by electrolysis so as to balance the H 2 /CO ratio to a value equal to at least 2,0 ÷ 2,2 in volume, thus maximizing the conversion of the organic components in the fermentation step so as to avoid the emission of CO 2 into the atmosphere, • High temperature conversion of the waste with production of raw syngas ; • Production of H 2 and O 2 through electrolysis ; • Purification of the raw syngas by a purification unit which acts on two pressure levels , the purpose of which is the removal of particulate, metals, chlorides, ammonia, COS, and H 2 S ; • Fermentation of the purified syngas for producing raw bioethanol, after the addition of all or part of the hydrogen produced by electrolysis for achieving the optimal H 2 /CO ratio required for the fermentation reactions ; • Partial or total conversion of the residual carbon dioxide present in the purge gas outcoming from the fermentation into methane ; • Separation of the methane produced by unconverted carbon dioxide, and recycling of all or part of the methane recovered and all the CO 2 separated to the thermal conversion step .
Use of cowpea mosaic virus capsid nanoparticles devoid of genetic material, as such or loaded with one or more agricultural drugs, for the treatment of a disease of the aerial part of a plant, such as the leaf, said disease being caused by a microorganism which attacks said aerial part.
An electrical isolator comprising: an elongate dielectric flexible member characterized in that the elongate dielectric flexible member is encased in a corresponding length of a dielectric flexible membrane so as to define voids there-between, and the membrane is filled with dielectric fluid so as to fill the voids, wherein the opposite ends of the membrane and member are sealed to provide a fluid seal.
A tip for a twist drill or an end mill, the tip comprising: a super-hard structure joined to a cemented carbide substrate by means of at least two intermediate layers disposed between the super-hard structure and the cemented carbide substrate , the intermediate layers comprising different compositions of diamond or cubic boron nitride grains, metal carbide grains and metal binder; the superhard structure comprising polycrystalline diamond, PCD, or polycrystalline cubic boron nitride, PCBN, material; and the tip comprising at least two flutes , a peripheral side of the superhard structure defining a cylindrical land connecting the flutes , wherein the intermediate layers comprise at least 10 volume percent diamond and at most 80 volume percent diamond grains, and/or at least 10 volume percent cBN grains and at most 50 volume percent cBN grains, wherein at least one intermediate layer has a thickness of at least 0.1 mm and wherein the superhard structure has a thickness of at least 1 mm. a super-hard structure joined to a cemented carbide substrate by means of at least two intermediate layers disposed between the super-hard structure and the cemented carbide substrate , the intermediate layers comprising different compositions of diamond or cubic boron nitride grains, metal carbide grains and metal binder; the superhard structure comprising polycrystalline diamond, PCD, or polycrystalline cubic boron nitride, PCBN, material; and the tip comprising at least two flutes , a peripheral side of the superhard structure defining a cylindrical land connecting the flutes , wherein the intermediate layers comprise at least 10 volume percent diamond and at most 80 volume percent diamond grains, and/or at least 10 volume percent cBN grains and at most 50 volume percent cBN grains, wherein at least one intermediate layer has a thickness of at least 0.1 mm and wherein the superhard structure has a thickness of at least 1 mm.
An aqueous composition comprising at least 10 weight percent of a dispersed esterified cellulose ether, based on the total weight of the aqueous composition, wherein the esterified cellulose ether comprises (i) groups of the formula -C(O) - R - COOH or (ii) a combination of aliphatic monovalent acyl groups and groups of the formula -C(O) - R - COOH, R being a divalent aliphatic or aromatic hydrocarbon group, and at least a part of the groups -C(O) - R - COOH are neutralized with an ammonium salt of carbonic acid, formic acid or acetic acid, and wherein d90 of the dispersed esterified cellulose ether particles is up to 10 micrometers, d90 being the diameter where 90 mass percent of the particles have a smaller equivalent diameter and the other 10 mass percent have a larger equivalent diameter. (i) groups of the formula -C(O) - R - COOH or (ii) a combination of aliphatic monovalent acyl groups and groups of the formula -C(O) - R - COOH, R being a divalent aliphatic or aromatic hydrocarbon group, and at least a part of the groups -C(O) - R - COOH are neutralized with an ammonium salt of carbonic acid, formic acid or acetic acid, and wherein d90 of the dispersed esterified cellulose ether particles is up to 10 micrometers, d90 being the diameter where 90 mass percent of the particles have a smaller equivalent diameter and the other 10 mass percent have a larger equivalent diameter.
A method of synchronizing a line scan camera, comprising: obtaining (404; 432) line scan data of a region of interest (ROI) of a travelling surface from the line scan camera, the line scan camera being oriented perpendicular to a direction of travel of the travelling surface, the line scan data comprising a plurality of lines; identifying occurrences of a major frequency of a repeated texture on the travelling surface in the direction of travel of the travelling surface using characterized line scan data for each line in the plurality of lines of the line scan data, wherein the characterized line scan data for each line is a statistical measure of the pixel values of each line of line scan data, each of the pixel values being a digital number; determining a period of the major frequency ; and changing a line rate of the line scan camera when the determined period is different than a reference period. obtaining (404; 432) line scan data of a region of interest (ROI) of a travelling surface from the line scan camera, the line scan camera being oriented perpendicular to a direction of travel of the travelling surface, the line scan data comprising a plurality of lines; identifying occurrences of a major frequency of a repeated texture on the travelling surface in the direction of travel of the travelling surface using characterized line scan data for each line in the plurality of lines of the line scan data, wherein the characterized line scan data for each line is a statistical measure of the pixel values of each line of line scan data, each of the pixel values being a digital number; determining a period of the major frequency ; and changing a line rate of the line scan camera when the determined period is different than a reference period.
A method of pre-magnetizing a main transformer connectable to an AC grid and connectable to a Modular Multilevel power Converter, MMC, with a plurality of converter cells each including a cell capacitor and power semiconductor switches, comprising in order - disconnecting the main transformer from the MMC, - charging the cell capacitors of the MMC, - connecting the main transformer to the MMC, - pre-magnetizing the main transformer from energy stored in the cell capacitors of the MMC, and - connecting the main transformer to the AC grid. - disconnecting the main transformer from the MMC, - charging the cell capacitors of the MMC, - connecting the main transformer to the MMC, - pre-magnetizing the main transformer from energy stored in the cell capacitors of the MMC, and - connecting the main transformer to the AC grid.
A lightweight container having a planked support frame made of frame profiles, characterized in that the frame profiles of the support frame are connected to each other by nodes which are designed to be flexible and the planking consists of thin supporting structured or hybrid metal panels configured for buckling or of sandwich panels with thin cover layers which are each attached to the frame profiles .
A method for identifying an agent that modulates the activity of Mfn1 in a preparation containing an Mfn1 polypeptide or polynucleotide and a candidate agent, comprising detecting whether said candidate agent affects activity of the Mfn1 polypeptide or polynucleotide, wherein the activity of Mfn1 is measured by determining the GTPase activity of Mfn1, and wherein the method is for identifying an agent capable of reducing the activity of Mfn1 but which does not modulate the activity of mitofusin-2 (Mfn2).
An imaging device comprising: a processing unit formed on a first semiconductor substrate and configured to perform predetermined image processing on the basis of image data obtained by an imaging unit ; a first temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal (SIGT) according to a temperature; a conversion unit configured to generate a first digital code (CODE) by performing analog-to-digital conversion on the basis of the detection signal; a first pad electrode (PAD2) formed on the first semiconductor substrate and electrically insulated from a circuit (9; 10; 20; 201; 202; 203) formed on the first semiconductor substrate , the circuit being configured to generate the image data, the first pad electrode (PAD2) being configured to contact a thermocouple to measure a temperature; a storage unit configured to store information (PCAL) about the temperature measured using the thermocouple , and a calculation unit formed on the first semiconductor substrate configured to generate a temperature code (TC, TC1) on the basis of the first digital code (CODE), and to perform correction processing of correcting the temperature code (TC) using the information (PCAL) about the temperature measured using the thermocouple a processing unit formed on a first semiconductor substrate and configured to perform predetermined image processing on the basis of image data obtained by an imaging unit ; a first temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal (SIGT) according to a temperature; a conversion unit configured to generate a first digital code (CODE) by performing analog-to-digital conversion on the basis of the detection signal; a first pad electrode (PAD2) formed on the first semiconductor substrate and electrically insulated from a circuit (9; 10; 20; 201; 202; 203) formed on the first semiconductor substrate , the circuit being configured to generate the image data, the first pad electrode (PAD2) being configured to contact a thermocouple to measure a temperature; a storage unit configured to store information (PCAL) about the temperature measured using the thermocouple , and a calculation unit formed on the first semiconductor substrate configured to generate a temperature code (TC, TC1) on the basis of the first digital code (CODE), and to perform correction processing of correcting the temperature code (TC) using the information (PCAL) about the temperature measured using the thermocouple to generate a temperature code (TC, TC1) on the basis of the first digital code (CODE), and to perform correction processing of correcting the temperature code (TC) using the information (PCAL) about the temperature measured using the thermocouple
A stent graft comprising: a wall defining a generally tubular lumen, the wall defining an opening, the opening having a circumferential periphery; a resilient reinforcing wire curved to follow the periphery of the opening; and a marker winding wound helically around the reinforcing wire , whereby the marker winding is viewable on an image display system employing electromagnetic radiation so as to indicate the location of the periphery of the opening; wherein the marker winding defines a curved passageway around the resilient wire, the curved passageway having an internal diameter D, wherein the marker winding is helically wound with a pitch providing at least one winding per length D along the reinforcing wire; and wherein the marker winding is helically wound with a pitch of greater than 60 degrees. a wall defining a generally tubular lumen, the wall defining an opening, the opening having a circumferential periphery; a resilient reinforcing wire curved to follow the periphery of the opening; and a marker winding wound helically around the reinforcing wire , whereby the marker winding is viewable on an image display system employing electromagnetic radiation so as to indicate the location of the periphery of the opening; wherein the marker winding defines a curved passageway around the resilient wire, the curved passageway having an internal diameter D, wherein the marker winding is helically wound with a pitch providing at least one winding per length D along the reinforcing wire; and wherein the marker winding is helically wound with a pitch of greater than 60 degrees.
A terminal device that communicates with a base station device , wherein a plurality of transmission time interval modes, TTI modes, related to a size of a transmission time interval, TTI, are specified, including at least a first TTI mode in which the TTI is based on a length of a subframe and a second TTI mode in which the TTI is based on a length of a symbol, the symbol length being smaller than the subframe length, the terminal device comprising: a higher layer processing unit configured to set the second TTI mode through signaling of a higher layer from the base station device; and a receiving unit configured to receive a channel in the first TTI mode in a case in which the second TTI mode is not set and receive a channel in the second TTI mode in a case in which the second TTI mode is set, wherein a number of symbols of a resource corresponding to the channel in the second TTI mode is smaller than a number of symbols of a resource corresponding to the channel in the first TTI mode, characterized in that the channel in the second TTI mode is mapped to one or more periodic resources that are set or notified through the signaling of the higher layer, the resources being defined by successive sub carriers of symbol length in the time domain and consecutive sub carriers in the frequency domain. a higher layer processing unit configured to set the second TTI mode through signaling of a higher layer from the base station device; and a receiving unit configured to receive a channel in the first TTI mode in a case in which the second TTI mode is not set and receive a channel in the second TTI mode in a case in which the second TTI mode is set, wherein a number of symbols of a resource corresponding to the channel in the second TTI mode is smaller than a number of symbols of a resource corresponding to the channel in the first TTI mode, characterized in that the channel in the second TTI mode is mapped to one or more periodic resources that are set or notified through the signaling of the higher layer, the resources being defined by successive sub carriers of symbol length in the time domain and consecutive sub carriers in the frequency domain.