A power conversion apparatus comprising: • a housing ; • a DC-DC conversion circuit configured to convert a first DC signal (Vs) to a second DC signal (V B ) and comprising first primary switching circuitry comprising: • at least two silicon carbide transistors (T1...T8) that are hard switched during a conversion process; • a diode (D3, D6, D9, D12) coupled in anti-parallel across drains and sources of the at least two silicon carbide transistors; and • at least one main signal path that comprises: a pair of silicon carbide diodes (D1,D2; D4,D5; D7,D8; D10,D11) connected in parallel that are placed in series in the at least one main signal path; and an energy storage device (L1, L2), wherein the at least two silicon carbide transistors, the diode, the pair of silicon carbide diodes connected in parallel, and the energy storage device convert the first DC signal (V s ) to the second DC signal (V B ); and • an inverter configured to convert the second DC signal (V B ) to a sinusoidal AC signal (V3φ) and comprising second primary switching circuitry comprising at least two silicon carbide transistors (T11...T26) and a series inductor (L5, L6, L7) associated with the at least two silicon carbide transistors (T11... T26) where the at least two silicon carbide transistors (T11...T26) are hard switched during the conversion process. • a housing ; • a DC-DC conversion circuit configured to convert a first DC signal (Vs) to a second DC signal (V B ) and comprising first primary switching circuitry comprising: • at least two silicon carbide transistors (T1...T8) that are hard switched during a conversion process; • a diode (D3, D6, D9, D12) coupled in anti-parallel across drains and sources of the at least two silicon carbide transistors; and • at least one main signal path that comprises: a pair of silicon carbide diodes (D1,D2; D4,D5; D7,D8; D10,D11) connected in parallel that are placed in series in the at least one main signal path; and an energy storage device (L1, L2), wherein the at least two silicon carbide transistors, the diode, the pair of silicon carbide diodes connected in parallel, and the energy storage device convert the first DC signal (V s ) to the second DC signal (V B ); and • at least two silicon carbide transistors (T1...T8) that are hard switched during a conversion process; • a diode (D3, D6, D9, D12) coupled in anti-parallel across drains and sources of the at least two silicon carbide transistors; and • at least one main signal path that comprises: a pair of silicon carbide diodes (D1,D2; D4,D5; D7,D8; D10,D11) connected in parallel that are placed in series in the at least one main signal path; and an energy storage device (L1, L2), wherein the at least two silicon carbide transistors, the diode, the pair of silicon carbide diodes connected in parallel, and the energy storage device convert the first DC signal (V s ) to the second DC signal (V B ); and a pair of silicon carbide diodes (D1,D2; D4,D5; D7,D8; D10,D11) connected in parallel that are placed in series in the at least one main signal path; and an energy storage device (L1, L2), wherein the at least two silicon carbide transistors, the diode, the pair of silicon carbide diodes connected in parallel, and the energy storage device convert the first DC signal (V s ) to the second DC signal (V B ); and • an inverter configured to convert the second DC signal (V B ) to a sinusoidal AC signal (V3φ) and comprising second primary switching circuitry comprising at least two silicon carbide transistors (T11...T26) and a series inductor (L5, L6, L7) associated with the at least two silicon carbide transistors (T11... T26) where the at least two silicon carbide transistors (T11...T26) are hard switched during the conversion process. <EOS>