A thermal barrier-coated Ni alloy component comprising: a substrate made of a Ni alloy containing Al; an intermediate layer formed on a surface of the substrate; and a thermal barrier layer made of a ceramic and formed on a surface of the intermediate layer, wherein the intermediate layer includes a γ' layer which is provided on the surface on a thermal barrier layer side, is formed from a single phase of a γ'-Ni 3 Al phase without containing any γ-Ni solid solution phase, and contains Pt and Ir, and a γ containing layer located on the substrate side of the γ' layer, the γ containing layer being made of a γ+γ' layer, which is formed from a γ-Ni solid solution phase and the γ'-Ni 3 Al phase and contains Pt and Ir, and the γ' layer has a higher concentration of Pt than the γ containing layer has, the γ containing layer has a higher concentration of Ir than the γ' layer has, the intermediate layer includes a diffusion layer provided on the substrate side of the γ containing layer, the diffusion layer being formed by diffusing Pt and Ir into the substrate and including an Ir-concentrated portion formed by concentrating Ir, the γ' layer has a film thickness in a range from 2 μm 30 to 3 μm, the γ containing layer has a film thickness in a range from 5 μm to 7 μm, the diffusion layer has a film thickness in a range from 10 μm to 20 μm, and the substrate has a composition in terms of mass ratio: Co: 5.5% by mass, Cr: 5.4% by mass, Mo: 2.2% by mass, W: 2.9% by mass, Al: 5.6% by mass, Nb: 0.5% by mass, Ta: 5.5% by mass, Hf : 0.1% by mass, Re: 7.5% by mass, Ru: 5.0% by mass, and with the balance including Ni and unavoidable impurities. a substrate made of a Ni alloy containing Al; an intermediate layer formed on a surface of the substrate; and a thermal barrier layer made of a ceramic and formed on a surface of the intermediate layer, wherein the intermediate layer includes a γ' layer which is provided on the surface on a thermal barrier layer side, is formed from a single phase of a γ'-Ni 3 Al phase without containing any γ-Ni solid solution phase, and contains Pt and Ir, and a γ containing layer located on the substrate side of the γ' layer, the γ containing layer being made of a γ+γ' layer, which is formed from a γ-Ni solid solution phase and the γ'-Ni 3 Al phase and contains Pt and Ir, and a γ' layer which is provided on the surface on a thermal barrier layer side, is formed from a single phase of a γ'-Ni 3 Al phase without containing any γ-Ni solid solution phase, and contains Pt and Ir, and a γ containing layer located on the substrate side of the γ' layer, the γ containing layer being made of a γ+γ' layer, which is formed from a γ-Ni solid solution phase and the γ'-Ni 3 Al phase and contains Pt and Ir, and the γ' layer has a higher concentration of Pt than the γ containing layer has, the γ containing layer has a higher concentration of Ir than the γ' layer has, the intermediate layer includes a diffusion layer provided on the substrate side of the γ containing layer, the diffusion layer being formed by diffusing Pt and Ir into the substrate and including an Ir-concentrated portion formed by concentrating Ir, the γ' layer has a film thickness in a range from 2 μm 30 to 3 μm, the γ containing layer has a film thickness in a range from 5 μm to 7 μm, the diffusion layer has a film thickness in a range from 10 μm to 20 μm, and the substrate has a composition in terms of mass ratio: Co: 5.5% by mass, Cr: 5.4% by mass, Mo: 2.2% by mass, W: 2.9% by mass, Al: 5.6% by mass, Nb: 0.5% by mass, Ta: 5.5% by mass, Hf : 0.1% by mass, Re: 7.5% by mass, Ru: 5.0% by mass, and with the balance including Ni and unavoidable impurities. <EOS>