A light emitting device comprising: a light emitting structure comprising a first section and a second section , wherein the first section comprises a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers (122/126), and wherein the second section comprises a third semiconductor layer disposed on the first section and doped with the first dopant, the third semiconductor layer having an exposed region, a fourth semiconductor layer disposed on the third semiconductor layer except for the exposed region and doped with the second dopant, and a second active layer between the third and fourth semiconductor layers ; an intermediate layer disposed between the first and second sections , a first electrode disposed on the first semiconductor layer ; a second electrode disposed on the fourth semiconductor layer ; and a third electrode inserted into a hole in the exposed region so as to be disposed on the exposed region and the second semiconductor layer , the third electrode being electrically connected to the second and third semiconductor layers . wherein the intermediate layer comprises a first intermediate layer adjacent to the first section , a second intermediate layer adjacent to the second section , and a third intermediate layer between the first and second intermediate layers (152 and 154), and parts of the first intermediate layer and the second intermediate layer are removed to allow the third electrode to come into contact with the second semiconductor layer , wherein the first and second intermediate layers are two-dimensional electron gas layers formed by an energy band gap difference between the second and third semiconductor layers 126 and 132 and the intermediate layer 156. a light emitting structure comprising a first section and a second section , wherein the first section comprises a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers (122/126), and wherein the second section comprises a third semiconductor layer disposed on the first section and doped with the first dopant, the third semiconductor layer having an exposed region, a fourth semiconductor layer disposed on the third semiconductor layer except for the exposed region and doped with the second dopant, and a second active layer between the third and fourth semiconductor layers ; an intermediate layer disposed between the first and second sections , a first electrode disposed on the first semiconductor layer ; a second electrode disposed on the fourth semiconductor layer ; and a third electrode inserted into a hole in the exposed region so as to be disposed on the exposed region and the second semiconductor layer , the third electrode being electrically connected to the second and third semiconductor layers . wherein the intermediate layer comprises a first intermediate layer adjacent to the first section , a second intermediate layer adjacent to the second section , and a third intermediate layer between the first and second intermediate layers (152 and 154), and parts of the first intermediate layer and the second intermediate layer are removed to allow the third electrode to come into contact with the second semiconductor layer , wherein the first and second intermediate layers are two-dimensional electron gas layers formed by an energy band gap difference between the second and third semiconductor layers 126 and 132 and the intermediate layer 156. <EOS>