A component carrier , wherein the component carrier comprises: at least one electrically conductive layer structure and at least one electrically insulating layer structure ; a through-hole extending through the at least one electrically insulating layer structure ; highly thermally conductive material filling only part of the through-hole so that a recess is formed which is not filled with the highly thermally conductive material and which extends at least from an outer face of the at least one electrically insulating layer structure into the through-hole ; wherein the highly thermally conductive material is copper, which has been filled into the through-hole by means of a plating procedure; wherein a diameter, B, of the recess at a level of the outer face of the at least one electrically insulating layer structure and a width, A, of a web of the highly thermally conductive material at the level of the outer face of the at least one electrically insulating layer structure fulfil the conditions B>A and A>B/20; and wherein a further recess is formed in the highly thermally conductive material opposing the recess , wherein the further recess is not filled with the highly thermally conductive material and extends at least from another outer face of the at least one electrically insulating layer structure into the through-hole , characterized in that a ratio between a vertical distance, G, between an innermost end of the recess and an innermost end of the further recess on the one hand and a height, D, of the through-hole on the other hand is in a range between 30% and 95%, in particular is in a range between 50% and 60%. at least one electrically conductive layer structure and at least one electrically insulating layer structure ; a through-hole extending through the at least one electrically insulating layer structure ; highly thermally conductive material filling only part of the through-hole so that a recess is formed which is not filled with the highly thermally conductive material and which extends at least from an outer face of the at least one electrically insulating layer structure into the through-hole ; wherein the highly thermally conductive material is copper, which has been filled into the through-hole by means of a plating procedure; wherein a diameter, B, of the recess at a level of the outer face of the at least one electrically insulating layer structure and a width, A, of a web of the highly thermally conductive material at the level of the outer face of the at least one electrically insulating layer structure fulfil the conditions B>A and A>B/20; and wherein a further recess is formed in the highly thermally conductive material opposing the recess , wherein the further recess is not filled with the highly thermally conductive material and extends at least from another outer face of the at least one electrically insulating layer structure into the through-hole , characterized in that a ratio between a vertical distance, G, between an innermost end of the recess and an innermost end of the further recess on the one hand and a height, D, of the through-hole on the other hand is in a range between 30% and 95%, in particular is in a range between 50% and 60%. <EOS>