A high-frequency module, comprising: - A semiconductor component which is configured to generate and/or process electrical high-frequency signals (s HF , r HF ), a waveguide , - a coupling element which is electrically contacted with the semiconductor component and galvanically contacted with the waveguide in order to couple the high-frequency signals (s HF ) into the waveguide as radar signals (s HF ) and/or to couple radar signals (r HF ) from the waveguide into the semiconductor component as electrical signals (r HF ), with ∘ a first metalization layer , ∘ a second metalization layer , ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer , and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer , - wherein the electrical plated through-holes are configured as metalized vias, wherein the first plated through-holes are arranged along an internal, almost closed contour in such a way that the radar signals (s HF , r HF ) in the coupling element are mainly conducted in TE10 mode, and wherein the second plated through-holes are arranged relative to the internal contour along an external, almost closed contour in such a way that the high-frequency signals (s HF , r HF ) are conducted laterally in the coupling element and are diverted by 90° in the direction of the axis of the waveguide and from this direction by 90° into the plane of the metalization layers . - A semiconductor component which is configured to generate and/or process electrical high-frequency signals (s HF , r HF ), a waveguide , - a coupling element which is electrically contacted with the semiconductor component and galvanically contacted with the waveguide in order to couple the high-frequency signals (s HF ) into the waveguide as radar signals (s HF ) and/or to couple radar signals (r HF ) from the waveguide into the semiconductor component as electrical signals (r HF ), with ∘ a first metalization layer , ∘ a second metalization layer , ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer , and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer , ∘ a first metalization layer , ∘ a second metalization layer , ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer , and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer , - wherein the electrical plated through-holes are configured as metalized vias, wherein the first plated through-holes are arranged along an internal, almost closed contour in such a way that the radar signals (s HF , r HF ) in the coupling element are mainly conducted in TE10 mode, and wherein the second plated through-holes are arranged relative to the internal contour along an external, almost closed contour in such a way that the high-frequency signals (s HF , r HF ) are conducted laterally in the coupling element and are diverted by 90° in the direction of the axis of the waveguide and from this direction by 90° into the plane of the metalization layers . <EOS>