A method of manufacturing an electromechanical systems structure comprising: providing a stack, wherein the stack comprises a substrate ; a sacrificial layer positioned on the substrate ; a structural layer extending in a plane and positioned on the sacrificial layer ; an etch-stop layer positioned on the structural layer ; a mold positioned on the etch-stop layer , wherein the mold comprises a sidewall and a top surface; a sidewall layer comprising a first portion lying in a plane parallel to the structural layer plane, comprising a first region on the etch-stop layer and a second region on the top of the mold, wherein the sidewall layer further comprises a second portion lying in a plane transverse to the structural layer plane and positioned on the sidewall of the mold, wherein the etch-stop layer comprises an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer; etching the sidewall layer's first portion to expose the etch-stop layer and the top of the mold ; removing the mold ; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer ; removing the sidewall layer's second portion ; etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer ; and removing the sacrificial layer after etching the structural layer. providing a stack, wherein the stack comprises a substrate ; a sacrificial layer positioned on the substrate ; a structural layer extending in a plane and positioned on the sacrificial layer ; an etch-stop layer positioned on the structural layer ; a mold positioned on the etch-stop layer , wherein the mold comprises a sidewall and a top surface; a sidewall layer comprising a first portion lying in a plane parallel to the structural layer plane, comprising a first region on the etch-stop layer and a second region on the top of the mold, wherein the sidewall layer further comprises a second portion lying in a plane transverse to the structural layer plane and positioned on the sidewall of the mold, wherein the etch-stop layer comprises an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer; a substrate ; a sacrificial layer positioned on the substrate ; a structural layer extending in a plane and positioned on the sacrificial layer ; an etch-stop layer positioned on the structural layer ; a mold positioned on the etch-stop layer , wherein the mold comprises a sidewall and a top surface; a sidewall layer comprising a first portion lying in a plane parallel to the structural layer plane, comprising a first region on the etch-stop layer and a second region on the top of the mold, wherein the sidewall layer further comprises a second portion lying in a plane transverse to the structural layer plane and positioned on the sidewall of the mold, wherein the etch-stop layer comprises an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer; etching the sidewall layer's first portion to expose the etch-stop layer and the top of the mold ; removing the mold ; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer ; removing the sidewall layer's second portion ; etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer ; and removing the sacrificial layer after etching the structural layer. <EOS>