A nanorod light emitting diode, LED, the nanorod LED comprising: a first semiconductor layer (103; 203; 213; 223; 302; 312; 322; 403; 503); a multi-quantum well structure layer (102; 202; 212; 222; 303; 313; 323; 402; 502); a second semiconductor layer (101; 201; 211; 221; 305; 315; 325; 401; 501); a first conductor layer (108; 206; 216; 226; 301; 311; 321) formed on the first semiconductor layer and a second conductor layer (112; 307; 317; 327) formed on the second semiconductor layer a passivation layer (106; 205; 215; 225; 304; 314; 324; 406) formed on opposite side surfaces of the first semiconductor layer, the multi-quantum well structure layer and the second semiconductor layer; wherein a length and shape at least one of the first conductor layer and the second conductor layer are controlled such that the multi-quantum well structure layer can be disposed between two electrodes (601, 602; 611, 612; 700, 701; 810, 820; 1010, 1020) of an electrode pattern on which the first and second conductor layers are to be aligned, characterised by a first ohmic contact layer (104; 204; 214; 224) formed between the first semiconductor layer and the first conductor layer; a second ohmic contact layer (110; 306; 316; 326) formed between the second semiconductor layer and the second conductor layer; and in that at least one of the first conductor layer and the second conductor layer is formed with a shape inclined to one side or with a zigzag shape on the at least one semiconductor layer. a first semiconductor layer (103; 203; 213; 223; 302; 312; 322; 403; 503); a multi-quantum well structure layer (102; 202; 212; 222; 303; 313; 323; 402; 502); a second semiconductor layer (101; 201; 211; 221; 305; 315; 325; 401; 501); a first conductor layer (108; 206; 216; 226; 301; 311; 321) formed on the first semiconductor layer and a second conductor layer (112; 307; 317; 327) formed on the second semiconductor layer a passivation layer (106; 205; 215; 225; 304; 314; 324; 406) formed on opposite side surfaces of the first semiconductor layer, the multi-quantum well structure layer and the second semiconductor layer; wherein a length and shape at least one of the first conductor layer and the second conductor layer are controlled such that the multi-quantum well structure layer can be disposed between two electrodes (601, 602; 611, 612; 700, 701; 810, 820; 1010, 1020) of an electrode pattern on which the first and second conductor layers are to be aligned, characterised by a first ohmic contact layer (104; 204; 214; 224) formed between the first semiconductor layer and the first conductor layer; a second ohmic contact layer (110; 306; 316; 326) formed between the second semiconductor layer and the second conductor layer; and in that characterised by a first ohmic contact layer (104; 204; 214; 224) formed between the first semiconductor layer and the first conductor layer; a second ohmic contact layer (110; 306; 316; 326) formed between the second semiconductor layer and the second conductor layer; and in that at least one of the first conductor layer and the second conductor layer is formed with a shape inclined to one side or with a zigzag shape on the at least one semiconductor layer. <EOS>