A light emitting element comprising: a semiconductor stack comprising: a first conductivity type semiconductor layer , a second conductivity type semiconductor layer , and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, a first conductive member electrically connected to the first conductivity type semiconductor layer, and a second conductive member electrically connected to the second conductivity type semiconductor layer, wherein: the first conductivity type semiconductor layer is a nitride semiconductor layer containing Al and Ga, the first conductivity type semiconductor layer comprises a first layer and a second layer , and an Al percentage composition of the first layer is lower than an Al percentage composition of the second layer, the first conductivity type semiconductor layer comprises: a first region (a1) where the second conductivity type semiconductor layer and the active layer are stacked; and a second region (a2) exposed from the second conductivity type semiconductor layer and the active layer, the second region being connected to the first conductive member; and (i) a thickness of the first layer in the first region is smaller than a thickness of the first layer in the second region, or (ii) the second layer is exposed from the first layer in the first region. a semiconductor stack comprising: a first conductivity type semiconductor layer , a second conductivity type semiconductor layer , and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, a first conductivity type semiconductor layer , a second conductivity type semiconductor layer , and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, a first conductive member electrically connected to the first conductivity type semiconductor layer, and a second conductive member electrically connected to the second conductivity type semiconductor layer, wherein: the first conductivity type semiconductor layer is a nitride semiconductor layer containing Al and Ga, the first conductivity type semiconductor layer comprises a first layer and a second layer , and an Al percentage composition of the first layer is lower than an Al percentage composition of the second layer, the first conductivity type semiconductor layer comprises: a first region (a1) where the second conductivity type semiconductor layer and the active layer are stacked; and a second region (a2) exposed from the second conductivity type semiconductor layer and the active layer, the second region being connected to the first conductive member; and (i) a thickness of the first layer in the first region is smaller than a thickness of the first layer in the second region, or (ii) the second layer is exposed from the first layer in the first region. a first region (a1) where the second conductivity type semiconductor layer and the active layer are stacked; and a second region (a2) exposed from the second conductivity type semiconductor layer and the active layer, the second region being connected to the first conductive member; and (i) a thickness of the first layer in the first region is smaller than a thickness of the first layer in the second region, or (ii) the second layer is exposed from the first layer in the first region. (i) a thickness of the first layer in the first region is smaller than a thickness of the first layer in the second region, or (ii) the second layer is exposed from the first layer in the first region. <EOS>