A semiconductor device , comprising: a first region of semiconductor material having a first conductivity type; a second region of semiconductor material partially overlapping the first region , the second region having a first conductivity type; a third region of semiconductor material within the first region , the third region having a second conductivity type opposite the first conductivity type; a fourth region of semiconductor material having the second conductivity type; a fifth region of semiconductor material having the first conductivity type; a sixth region of semiconductor material within the first region , the sixth region having the second conductivity type; and a seventh region of semiconductor material within the first region , the seventh region having the first conductivity type; wherein: a portion of the first region is disposed between the third region and the second region ; the second region is disposed between the first region and the fourth region ; the first region has a dopant concentration that is greater than the second region ; the fifth region and the third region are electrically connected; the sixth region and the seventh region are abutting and electrically connected, and disposed between the third region and the second region ; and the sixth region and the seventh region are floating, wherein the first region comprises a first base well region; the second region comprises a triggering base well region; the third region comprises an emitter region; the fourth region comprises a collector region; and the fifth region comprises a base contact region. a first region of semiconductor material having a first conductivity type; a second region of semiconductor material partially overlapping the first region , the second region having a first conductivity type; a third region of semiconductor material within the first region , the third region having a second conductivity type opposite the first conductivity type; a fourth region of semiconductor material having the second conductivity type; a fifth region of semiconductor material having the first conductivity type; a sixth region of semiconductor material within the first region , the sixth region having the second conductivity type; and a seventh region of semiconductor material within the first region , the seventh region having the first conductivity type; wherein: a portion of the first region is disposed between the third region and the second region ; the second region is disposed between the first region and the fourth region ; the first region has a dopant concentration that is greater than the second region ; the fifth region and the third region are electrically connected; the sixth region and the seventh region are abutting and electrically connected, and disposed between the third region and the second region ; and the sixth region and the seventh region are floating, wherein the first region comprises a first base well region; the second region comprises a triggering base well region; the third region comprises an emitter region; the fourth region comprises a collector region; and the fifth region comprises a base contact region. a portion of the first region is disposed between the third region and the second region ; the second region is disposed between the first region and the fourth region ; the first region has a dopant concentration that is greater than the second region ; the fifth region and the third region are electrically connected; the sixth region and the seventh region are abutting and electrically connected, and disposed between the third region and the second region ; and the sixth region and the seventh region are floating, wherein the first region comprises a first base well region; the second region comprises a triggering base well region; the third region comprises an emitter region; the fourth region comprises a collector region; and the fifth region comprises a base contact region. <EOS>