A microelectromechanical transducer (1; 11) comprising: - a semiconductor body ; - a first, a second, a third and a fourth cavity (4a-4d) buried within the semiconductor body ; - a first, second, third and fourth membrane (5a-5d) extending in respective portions of an upper surface of the semiconductor body , suspended over the first, second, third and fourth cavities (4a-4d) respectively, and capable of being deflected by the action of a pressure external to the microelectromechanical transducer (1; 11) and acting on the upper surface of the semiconductor body ; - a first, second, third and fourth transducer element (6a-6d; 16a-16d) housed, respectively, by the first, second, third and fourth membranes (5a-5d) and coupled to one another electrically in a Wheatstone bridge configuration to convert said external pressure into an electrical signal, characterized in that each of the first, second, third and fourth transducers (16a-16d) comprises a first portion (16a'-16d') facing towards a respective first edge (5a'-5d') of the membrane (5a-5d) that houses it, a second portion (16a"-16d") facing towards a respective second edge (5a"-5d"), opposite the first edge, of the membrane (5a-5d) that houses it, and a third portion (16a'''-16d''') extending at a central region of the respective membrane (5a-5d) and electrically coupling the first and second portion, and in that , for each of the first, second, third and fourth transducers (16a-16d), the first and second portions (16a'-16d', 16a"-16d") have the same value of electrical resistance, and the third portion (16a'''-16d''') has a value of electrical resistance which is lower by at least one order of magnitude than the value of electrical resistance of the first and second portions. - a semiconductor body ; - a first, a second, a third and a fourth cavity (4a-4d) buried within the semiconductor body ; - a first, second, third and fourth membrane (5a-5d) extending in respective portions of an upper surface of the semiconductor body , suspended over the first, second, third and fourth cavities (4a-4d) respectively, and capable of being deflected by the action of a pressure external to the microelectromechanical transducer (1; 11) and acting on the upper surface of the semiconductor body ; - a first, second, third and fourth transducer element (6a-6d; 16a-16d) housed, respectively, by the first, second, third and fourth membranes (5a-5d) and coupled to one another electrically in a Wheatstone bridge configuration to convert said external pressure into an electrical signal, characterized in that each of the first, second, third and fourth transducers (16a-16d) comprises a first portion (16a'-16d') facing towards a respective first edge (5a'-5d') of the membrane (5a-5d) that houses it, a second portion (16a"-16d") facing towards a respective second edge (5a"-5d"), opposite the first edge, of the membrane (5a-5d) that houses it, and a third portion (16a'''-16d''') extending at a central region of the respective membrane (5a-5d) and electrically coupling the first and second portion, and in that , for each of the first, second, third and fourth transducers (16a-16d), the first and second portions (16a'-16d', 16a"-16d") have the same value of electrical resistance, and the third portion (16a'''-16d''') has a value of electrical resistance which is lower by at least one order of magnitude than the value of electrical resistance of the first and second portions. <EOS>