A power semiconductor module for an inverter circuit, comprising: a first insulating board ; a first semiconductor switching element mounted on said first insulating board and including a first main electrode , a second main electrode and a first gate electrode ; a second semiconductor switching element including a third main electrode , a fourth main electrode and a second gate electrode ; a first main terminal electrically connected to said first main electrode via a plurality of wires ; a second main terminal electrically connected to said second main electrode; a third main terminal electrically connected to said third main electrode via a plurality of wires ; and a fourth main terminal electrically connected to said fourth main electrode, a first control terminal electrically connected to said first gate electrode via a wire ; a third control terminal electrically connected to said second gate electrode via a wire ; wherein said first main terminal and said third main terminal are electrically connected and said second main terminal and said fourth main terminal are electrically connected so that said first semiconductor switching element and said second semiconductor switching element are electrically connected in parallel and a main electric current flows between said first main terminal and said second main terminal and between said third main terminal and said fourth main terminal ; characterized in further comprising a second insulating board on which said second semiconductor switching element is mounted; a second control terminal electrically connected to said first main electrode via a wire ; a fourth control terminal electrically connected to said third main electrode via a wire ; and a single conductor member formed as a metallic wire electrically connecting said first main electrode and said third main electrode to each other along a substantially shortest route. a first insulating board ; a first semiconductor switching element mounted on said first insulating board and including a first main electrode , a second main electrode and a first gate electrode ; a second semiconductor switching element including a third main electrode , a fourth main electrode and a second gate electrode ; a first main terminal electrically connected to said first main electrode via a plurality of wires ; a second main terminal electrically connected to said second main electrode; a third main terminal electrically connected to said third main electrode via a plurality of wires ; and a fourth main terminal electrically connected to said fourth main electrode, a first control terminal electrically connected to said first gate electrode via a wire ; a third control terminal electrically connected to said second gate electrode via a wire ; wherein said first main terminal and said third main terminal are electrically connected and said second main terminal and said fourth main terminal are electrically connected so that said first semiconductor switching element and said second semiconductor switching element are electrically connected in parallel and a main electric current flows between said first main terminal and said second main terminal and between said third main terminal and said fourth main terminal ; characterized in further comprising a second insulating board on which said second semiconductor switching element is mounted; a second control terminal electrically connected to said first main electrode via a wire ; a fourth control terminal electrically connected to said third main electrode via a wire ; and a single conductor member formed as a metallic wire electrically connecting said first main electrode and said third main electrode to each other along a substantially shortest route. <EOS>