A light emitting device comprising: a transparent growth substrate ; light emitting diode (LED) layers disposed on the substrate, the LED layers including a p-type layer and an n-type layer , the n-type layer being between the p-type layer and the growth substrate ; wherein the LED layers are etched to expose the n-type layer for electrically connecting to an n-metal contact , wherein the etch also creates a trench surrounding the device; one or more metal contact layers electrically contacting the p-type layer and the n-type layer to form the p-metal contact and the n-metal contact ; a first dielectric layer formed between the p-type layer and the p-metal contact, between the p-type layer and the n-metal contact and also formed in the trench, wherein the first dielectric layer is patterned to expose the n-type layer and to expose the p-type layer ; a dielectric polymer stress-buffer layer disposed over the p-metal contact and the n-metal contact , the stress-buffer layer forming a planar surface over the p-metal contact and the n-metal contact , the stress-buffer layer having two or more openings exposing a portion of the p-metal contact and a portion of the n-metal contact , wherein the stress-buffer layer at least partially fills the trench ; and metal solder pads disposed over the stress-buffer layer , wherein the metal solder pads are electrically connected to the p-metal contact and the n-metal contact through the openings in the stress-buffer layer , characterized in that , the n-metal contact is deposited into the trench over the patterned first dielectric layer and contacts the n-type layer in the trench. a transparent growth substrate ; light emitting diode (LED) layers disposed on the substrate, the LED layers including a p-type layer and an n-type layer , the n-type layer being between the p-type layer and the growth substrate ; wherein the LED layers are etched to expose the n-type layer for electrically connecting to an n-metal contact , wherein the etch also creates a trench surrounding the device; one or more metal contact layers electrically contacting the p-type layer and the n-type layer to form the p-metal contact and the n-metal contact ; a first dielectric layer formed between the p-type layer and the p-metal contact, between the p-type layer and the n-metal contact and also formed in the trench, wherein the first dielectric layer is patterned to expose the n-type layer and to expose the p-type layer ; a dielectric polymer stress-buffer layer disposed over the p-metal contact and the n-metal contact , the stress-buffer layer forming a planar surface over the p-metal contact and the n-metal contact , the stress-buffer layer having two or more openings exposing a portion of the p-metal contact and a portion of the n-metal contact , wherein the stress-buffer layer at least partially fills the trench ; and metal solder pads disposed over the stress-buffer layer , wherein the metal solder pads are electrically connected to the p-metal contact and the n-metal contact through the openings in the stress-buffer layer , characterized in that , the n-metal contact is deposited into the trench over the patterned first dielectric layer and contacts the n-type layer in the trench. <EOS>