A trenched semiconductor structure, comprising: a semiconductor substrate doped with impurities of a first conductive type having a first impurity concentration; an epitaxial layer doped with impurities of the first conductive type of a second impurity concentration, formed on the semiconductor substrate ; a plurality of active region trenches , formed in the epitaxial layer ; at least a termination region trench , formed in the epitaxial layer and away from the active region trenches ; an ion implantation layer , formed in a bottom of the active region trenches by doping impurities of a second conductive type ; a termination region dielectric layer , lining the termination region trench and partly formed on the epitaxial layer ; an active region dielectric layer , covering the ion implantation region in the active region trenches ; and a first polysilicon layer , covering the active region dielectric layer and filling the active region trenches ; a Schottky barrier layer formed on the epitaxial layer , on the active region trenches and on the termination region dielectric layer ; a second polysilicon layer , formed in the termination region trench between the Schottky barrier layer and the termination region dielectric layer ; wherein, the first impurity concentration is greater than the second impurity concentration, and a depth (d2) of the termination region trench is greater than that of the active region trenches and close to a depth of a depletion region under reverse breakdown, and wherein a width (w1) of the active region trenches is ranged between 0.6μm and 1.5μm, and a depth (d1) thereof is ranged between 1.5μm and 3μm, and wherein a width (w2) of the termination region trench is ranged between 5μm and 25μm, and the depth (d2) thereof is ranged between 5μm and 12μm. a semiconductor substrate doped with impurities of a first conductive type having a first impurity concentration; an epitaxial layer doped with impurities of the first conductive type of a second impurity concentration, formed on the semiconductor substrate ; a plurality of active region trenches , formed in the epitaxial layer ; at least a termination region trench , formed in the epitaxial layer and away from the active region trenches ; an ion implantation layer , formed in a bottom of the active region trenches by doping impurities of a second conductive type ; a termination region dielectric layer , lining the termination region trench and partly formed on the epitaxial layer ; an active region dielectric layer , covering the ion implantation region in the active region trenches ; and a first polysilicon layer , covering the active region dielectric layer and filling the active region trenches ; a Schottky barrier layer formed on the epitaxial layer , on the active region trenches and on the termination region dielectric layer ; a second polysilicon layer , formed in the termination region trench between the Schottky barrier layer and the termination region dielectric layer ; wherein, the first impurity concentration is greater than the second impurity concentration, and a depth (d2) of the termination region trench is greater than that of the active region trenches and close to a depth of a depletion region under reverse breakdown, and wherein a width (w1) of the active region trenches is ranged between 0.6μm and 1.5μm, and a depth (d1) thereof is ranged between 1.5μm and 3μm, and wherein a width (w2) of the termination region trench is ranged between 5μm and 25μm, and the depth (d2) thereof is ranged between 5μm and 12μm. <EOS>