An imaging device , comprising: a first section including: a first semiconductor substrate ; at least one first photoelectric conversion region disposed in the first semiconductor substrate ; a first floating diffusion (FD) coupled to the at least one first photoelectric conversion region ; a first bonding portion ; a first wiring electrically connected between the first floating diffusion (FD) and the first bonding portion ; at least one second photoelectric conversion region disposed in the first semiconductor substrate ; a second floating diffusion (FD) coupled to the at least one second photoelectric conversion region ; a second bonding portion ; a second wiring electrically connected between the second floating diffusion (FD) and the second bonding portion ; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage (VSS); and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring ; and a second section , including a second semiconductor substrate , bonded to the first section via the first and second bonding portions and including readout circuitry coupled to the first bonding portion and the second bonding portion . a first section including: a first semiconductor substrate ; at least one first photoelectric conversion region disposed in the first semiconductor substrate ; a first floating diffusion (FD) coupled to the at least one first photoelectric conversion region ; a first bonding portion ; a first wiring electrically connected between the first floating diffusion (FD) and the first bonding portion ; at least one second photoelectric conversion region disposed in the first semiconductor substrate ; a second floating diffusion (FD) coupled to the at least one second photoelectric conversion region ; a second bonding portion ; a second wiring electrically connected between the second floating diffusion (FD) and the second bonding portion ; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage (VSS); and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring ; and a first semiconductor substrate ; at least one first photoelectric conversion region disposed in the first semiconductor substrate ; a first floating diffusion (FD) coupled to the at least one first photoelectric conversion region ; a first bonding portion ; a first wiring electrically connected between the first floating diffusion (FD) and the first bonding portion ; at least one second photoelectric conversion region disposed in the first semiconductor substrate ; a second floating diffusion (FD) coupled to the at least one second photoelectric conversion region ; a second bonding portion ; a second wiring electrically connected between the second floating diffusion (FD) and the second bonding portion ; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage (VSS); and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring ; and a second section , including a second semiconductor substrate , bonded to the first section via the first and second bonding portions and including readout circuitry coupled to the first bonding portion and the second bonding portion . <EOS>