A surface light-emitting semiconductor laser element comprising: a lower reflector including a semiconductor multi-layer; a current confinement layer including a current injection region and an oxidized region; an active layer disposed between the lower reflector and the current confinement layer ; an upper reflector including a semiconductor multi-layer, the upper reflector disposed on the current confinement layer , the upper reflector including an uppermost layer; and a complex refractive index distribution structure having a complex refraction index, the complex refractive index distribution structure comprising a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector , the contact layer having a plurality of layers , each layer having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers and having an opening with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers ; and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer , wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening , wherein the contact layer and the electrode layer (36; 54) constitute the complex refractive index distribution structure, and wherein the complex refractive index changes in an outward direction from a center of the second opening. a lower reflector including a semiconductor multi-layer; a current confinement layer including a current injection region and an oxidized region; an active layer disposed between the lower reflector and the current confinement layer ; an upper reflector including a semiconductor multi-layer, the upper reflector disposed on the current confinement layer , the upper reflector including an uppermost layer; and a complex refractive index distribution structure having a complex refraction index, the complex refractive index distribution structure comprising a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector , the contact layer having a plurality of layers , each layer having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers and having an opening with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers ; and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer , wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening , a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector , the contact layer having a plurality of layers , each layer having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers and having an opening with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers ; and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer , wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening , wherein the contact layer and the electrode layer (36; 54) constitute the complex refractive index distribution structure, and wherein the complex refractive index changes in an outward direction from a center of the second opening. <EOS>