A microchannel plate comprising: a channel having a central axis extending at a channel bias angle relative to an input face of the microchannel plate ; a first portion of the channel near the input face comprising: a circumferentially extending glass sidewall surface ; a contact metal layer coupled to a bias voltage, wherein the contact metal layer is configured adjacent to and radially inward from the glass sidewall surface; an electron backscatter layer configured adjacent to and radially inward from the contact metal layer , wherein the electron backscatter layer is configured to receive primary electrons emitted from a photocathode and backscatter the primary electrons from a surface of the electron backscatter layer , wherein the electron backscatter layer comprises an element having an atomic mass unit greater than 100 grams/mole; and a secondary electron booster layer configured adjacent to and radially inward from the electron backscatter layer , wherein the secondary electron booster layer is configured to receive the backscattered primary electrons from the surface of the electron backscatter layer and to multiply the received backscattered primary electrons, characterized by a spaced plurality of channel openings with the electron backscatter layer configured between a contact metal layer and secondary electron booster layer circumferentially around a sidewall surface of each of the channel openings. a channel having a central axis extending at a channel bias angle relative to an input face of the microchannel plate ; a first portion of the channel near the input face comprising: a circumferentially extending glass sidewall surface ; a contact metal layer coupled to a bias voltage, wherein the contact metal layer is configured adjacent to and radially inward from the glass sidewall surface; an electron backscatter layer configured adjacent to and radially inward from the contact metal layer , wherein the electron backscatter layer is configured to receive primary electrons emitted from a photocathode and backscatter the primary electrons from a surface of the electron backscatter layer , wherein the electron backscatter layer comprises an element having an atomic mass unit greater than 100 grams/mole; and a secondary electron booster layer configured adjacent to and radially inward from the electron backscatter layer , wherein the secondary electron booster layer is configured to receive the backscattered primary electrons from the surface of the electron backscatter layer and to multiply the received backscattered primary electrons, a circumferentially extending glass sidewall surface ; a contact metal layer coupled to a bias voltage, wherein the contact metal layer is configured adjacent to and radially inward from the glass sidewall surface; an electron backscatter layer configured adjacent to and radially inward from the contact metal layer , wherein the electron backscatter layer is configured to receive primary electrons emitted from a photocathode and backscatter the primary electrons from a surface of the electron backscatter layer , wherein the electron backscatter layer comprises an element having an atomic mass unit greater than 100 grams/mole; and a secondary electron booster layer configured adjacent to and radially inward from the electron backscatter layer , wherein the secondary electron booster layer is configured to receive the backscattered primary electrons from the surface of the electron backscatter layer and to multiply the received backscattered primary electrons, <EOS>