A photoresist removal method, performed by a production line device, wherein the method comprising: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer, the metal overhead layer comprising a three-dimensional hollowed-out structure; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with the first organic solvent newly applied to the target wafer after the first duration; performing , in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer after the removal of the solvent, to obtain the target wafer where the photoresist is removed through simultaneous gas purging and centrifugal drying; wherein the performing , in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for the second duration based on a target ultrasonic power comprises: placing the rinsed target wafer in the first organic solvent at a second temperature; suspending a container containing the first organic solvent at the second temperature which is different from the first temperature on an ultrasonic cleaning water surface, a bottom of the container being in contact with the ultrasonic cleaning water surface; and performing the ultrasonic cleaning on the target wafer in the container for the second duration based on the target ultrasonic power. acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer, the metal overhead layer comprising a three-dimensional hollowed-out structure; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with the first organic solvent newly applied to the target wafer after the first duration; performing , in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer after the second duration; and drying the target wafer after the removal of the solvent, to obtain the target wafer where the photoresist is removed through simultaneous gas purging and centrifugal drying; wherein the performing , in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for the second duration based on a target ultrasonic power comprises: placing the rinsed target wafer in the first organic solvent at a second temperature; suspending a container containing the first organic solvent at the second temperature which is different from the first temperature on an ultrasonic cleaning water surface, a bottom of the container being in contact with the ultrasonic cleaning water surface; and performing the ultrasonic cleaning on the target wafer in the container for the second duration based on the target ultrasonic power. placing the rinsed target wafer in the first organic solvent at a second temperature; suspending a container containing the first organic solvent at the second temperature which is different from the first temperature on an ultrasonic cleaning water surface, a bottom of the container being in contact with the ultrasonic cleaning water surface; and performing the ultrasonic cleaning on the target wafer in the container for the second duration based on the target ultrasonic power. <EOS>