A pixel comprising: a plurality of vertical pinned photodiodes , each vertical pinned photodiode having dimensions in x, y and z directions representing a width, a length and a depth, into a substrate respectively, wherein a pinning dimension of each of the vertical pinned photodiodes is a narrowest dimension of each of the vertical pinned photodiodes and is the dimension in the x direction or the dimension in the y direction , each vertical pinned photodiode being configured to receive incoming light via a back surface defined in the x and y directions; a single floating diffusion implant ; a single transfer gate ; characterized in that : the pixel comprises a single photo-gate above the vertical pinned photodiodes ; in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant ; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes to the floating diffusion implant , such that the charge from said plurality of vertical pinned photodiodes is combined at said floating diffusion implant , and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage. a plurality of vertical pinned photodiodes , each vertical pinned photodiode having dimensions in x, y and z directions representing a width, a length and a depth, into a substrate respectively, wherein a pinning dimension of each of the vertical pinned photodiodes is a narrowest dimension of each of the vertical pinned photodiodes and is the dimension in the x direction or the dimension in the y direction , each vertical pinned photodiode being configured to receive incoming light via a back surface defined in the x and y directions; a single floating diffusion implant ; a single transfer gate ; characterized in that : the pixel comprises a single photo-gate above the vertical pinned photodiodes ; in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant ; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes to the floating diffusion implant , such that the charge from said plurality of vertical pinned photodiodes is combined at said floating diffusion implant , and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage. the pixel comprises a single photo-gate above the vertical pinned photodiodes ; in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant ; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes to the floating diffusion implant , such that the charge from said plurality of vertical pinned photodiodes is combined at said floating diffusion implant , and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage. <EOS>