Method for separating at least one solid-state component , in particular a wafer, from a solid-state body , at least comprising the steps of: modifying the crystal lattice of the solid-state body by means of a modification means , wherein a plurality of modifications are generated so as to form a non-planar, in particular curved, detachment region in the interior of the solid-state body , detaching the solid-state component from the solid-state body along the detachment region, and further treating the solid-state component in a defined manner, leading to a deformation of the solid-state component , wherein the positions of the modifications are generated in dependence on predefined parameters which describe a relationship between the deformation of the solid-state component in dependence on the defined further treatment of the solid-state component , wherein the modifications within the crystal lattice of the solid-state body are generated by means of radiation from at least one laser, in particular a picosecond or femtosecond laser, introduced via an outer surface of the solid-state component into the interior of the solid-state component , wherein further treatment of the solid-state component comprises the arrangement or generation of a defined coating on at least one surface of the solid-state component , and characterized in that the predefined parameters at least comprise data which include, at least indirectly, the thermal expansion coefficients of the material of the solid-state component and of the coating or which include or predefine a deformation of the solid-state component as a result of a defined temperature control of the solid-state component provided with the coating . modifying the crystal lattice of the solid-state body by means of a modification means , wherein a plurality of modifications are generated so as to form a non-planar, in particular curved, detachment region in the interior of the solid-state body , detaching the solid-state component from the solid-state body along the detachment region, and further treating the solid-state component in a defined manner, leading to a deformation of the solid-state component , wherein the positions of the modifications are generated in dependence on predefined parameters which describe a relationship between the deformation of the solid-state component in dependence on the defined further treatment of the solid-state component , wherein the modifications within the crystal lattice of the solid-state body are generated by means of radiation from at least one laser, in particular a picosecond or femtosecond laser, introduced via an outer surface of the solid-state component into the interior of the solid-state component , wherein further treatment of the solid-state component comprises the arrangement or generation of a defined coating on at least one surface of the solid-state component , and characterized in that the predefined parameters at least comprise data which include, at least indirectly, the thermal expansion coefficients of the material of the solid-state component and of the coating or which include or predefine a deformation of the solid-state component as a result of a defined temperature control of the solid-state component provided with the coating . <EOS>