A gate driver for providing a gate drive signal for a thin film transistor array substrate, the gate driver comprising: a driving capability detection module configured to receive at least a feedback signal collected from the gate drive signal and to detect a driving capability of the gate drive signal based at least on the feedback signal , the driving capability being represented by a rising time for the gate drive signal in the form of a voltage pulse signal to rise from a low level to a high level, the driving capability detection module further configured to output a detection signal indicative of the driving capability to a controller ; a push-pull output circuit comprising a first MOS transistor and a second MOS transistor that are connected in series; and a driving capability adjustment module configured to adjust the driving capability of the gate drive signal based on an adjustment instruction in the form of a digital signal from the controller , wherein the driving capability adjustment module comprises: a register configured to receive and configurably store the adjustment instruction ; characterized in that the driving capability adjustment module further comprises a driving capability adjustment component connected in series with the first MOS transistor and the second MOS transistor and between the first MOS transistor and the second MOS transistor , the driving capability adjustment component being adjusted and controlled by the adjustment instruction in the register , wherein the feedback signal is collected at a node between the second MOS transistor and the driving capability adjusting component . a driving capability detection module configured to receive at least a feedback signal collected from the gate drive signal and to detect a driving capability of the gate drive signal based at least on the feedback signal , the driving capability being represented by a rising time for the gate drive signal in the form of a voltage pulse signal to rise from a low level to a high level, the driving capability detection module further configured to output a detection signal indicative of the driving capability to a controller ; a push-pull output circuit comprising a first MOS transistor and a second MOS transistor that are connected in series; and a driving capability adjustment module configured to adjust the driving capability of the gate drive signal based on an adjustment instruction in the form of a digital signal from the controller , wherein the driving capability adjustment module comprises: a register configured to receive and configurably store the adjustment instruction ; characterized in that the driving capability adjustment module further comprises a driving capability adjustment component connected in series with the first MOS transistor and the second MOS transistor and between the first MOS transistor and the second MOS transistor , the driving capability adjustment component being adjusted and controlled by the adjustment instruction in the register , wherein the feedback signal is collected at a node between the second MOS transistor and the driving capability adjusting component . a register configured to receive and configurably store the adjustment instruction ; characterized in that the driving capability adjustment module further comprises a driving capability adjustment component connected in series with the first MOS transistor and the second MOS transistor and between the first MOS transistor and the second MOS transistor , the driving capability adjustment component being adjusted and controlled by the adjustment instruction in the register , wherein the feedback signal is collected at a node between the second MOS transistor and the driving capability adjusting component . <EOS>