Process for manufacturing a thermoregulated multilayer material containing vanadium oxide V02, said material comprising at least: - a substrate: • having a transmission coefficient substantially equal to 0 for radiation of wavelength λ between 0.25 and 25 μm; • having a reflection coefficient ρ ≥ 0.9, for incident radiation of wavelength λ between 7.5 and 10 μm, - a selective VO 2 layer of thickness between 50 and 500 nm, said thermoregulated multilayer material having: • for radiation of wavelength λ between 0.25 and 2.5 μm: an absorption coefficient α ≥ 0.8; • and for incident radiation of wavelength λ between 7.5 and 10 μm: a reflection coefficient p: ∘ ≥ 0.85, when the temperature T of said multilayer material is ≤ the metal-insulator transition temperature denoted « T MI », ∘ between 0.2 and 0.5, when the temperature T of said multilayer material is ≥ the metal-insulator transition temperature denoted « T MI », characterized in that said manufacturing process of said thermoregulated multilayer material comprises, in this order, at least the following steps: - On said substrate, via vacuum cathodic co-sputtering in the presence of a reactive plasma composed of nitrogen and argon, a film of vanadium nitride VN is deposited of thickness between 25 and 250 nm, intended to form said selective layer; - Under air at atmospheric pressure, the previously obtained material is annealed ex situ at temperatures between 450 and 600 °C, for a time of between 10 seconds and 30 minutes, preferably between 60 and 180 seconds, until said VO 2 thermoregulated multilayer material is obtained. - a substrate: • having a transmission coefficient substantially equal to 0 for radiation of wavelength λ between 0.25 and 25 μm; • having a reflection coefficient ρ ≥ 0.9, for incident radiation of wavelength λ between 7.5 and 10 μm, • having a transmission coefficient substantially equal to 0 for radiation of wavelength λ between 0.25 and 25 μm; • having a reflection coefficient ρ ≥ 0.9, for incident radiation of wavelength λ between 7.5 and 10 μm, - a selective VO 2 layer of thickness between 50 and 500 nm, said thermoregulated multilayer material having: • for radiation of wavelength λ between 0.25 and 2.5 μm: an absorption coefficient α ≥ 0.8; • and for incident radiation of wavelength λ between 7.5 and 10 μm: a reflection coefficient p: ∘ ≥ 0.85, when the temperature T of said multilayer material is ≤ the metal-insulator transition temperature denoted « T MI », ∘ between 0.2 and 0.5, when the temperature T of said multilayer material is ≥ the metal-insulator transition temperature denoted « T MI », • for radiation of wavelength λ between 0.25 and 2.5 μm: an absorption coefficient α ≥ 0.8; • and for incident radiation of wavelength λ between 7.5 and 10 μm: a reflection coefficient p: ∘ ≥ 0.85, when the temperature T of said multilayer material is ≤ the metal-insulator transition temperature denoted « T MI », ∘ between 0.2 and 0.5, when the temperature T of said multilayer material is ≥ the metal-insulator transition temperature denoted « T MI », ∘ ≥ 0.85, when the temperature T of said multilayer material is ≤ the metal-insulator transition temperature denoted « T MI », ∘ between 0.2 and 0.5, when the temperature T of said multilayer material is ≥ the metal-insulator transition temperature denoted « T MI », - On said substrate, via vacuum cathodic co-sputtering in the presence of a reactive plasma composed of nitrogen and argon, a film of vanadium nitride VN is deposited of thickness between 25 and 250 nm, intended to form said selective layer; - Under air at atmospheric pressure, the previously obtained material is annealed ex situ at temperatures between 450 and 600 °C, for a time of between 10 seconds and 30 minutes, preferably between 60 and 180 seconds, until said VO 2 thermoregulated multilayer material is obtained. <EOS>