A time of flight sensor device , comprising: a semiconductor substrate comprising a conversion region to convert an electromagnetic signal (S) in photo-generated charge carriers , and comprising a substrate doping region having a n doping type, wherein the substrate doping region extends from a first main surface region (110-A) of the semiconductor substrate into the semiconductor substrate , wherein the semiconductor substrate has adjacent to the substrate doping region a p doped region (110-1), and wherein the substrate doping region at least partially forms the conversion region in the semiconductor substrate , a readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type, wherein the readout node is configured to readout the photo generated charge carriers ; a control electrode arranged in the substrate doping region and having the p-doping type; a trench structure which is arranged laterally with respect to the substrate doping region and extends vertically with respect to the first main surface region (110-a) of the semiconductor substrate in the semiconductor substrate ; and a substrate contact region having the p doping type in the semiconductor substrate and adjacent to the first main surface region (110-A) of the semiconductor substrate ; wherein the substrate contact region is arranged between the first main surface region (110-A) of the semiconductor substrate and a first main surface region (150-A) of the trench structure , and wherein the first main surface region (150-A) of the trench structure forms a top end of the trench structure and is offset from the first main surface region (110-A) in the depth direction of the semiconductor substrate . a semiconductor substrate comprising a conversion region to convert an electromagnetic signal (S) in photo-generated charge carriers , and comprising a substrate doping region having a n doping type, wherein the substrate doping region extends from a first main surface region (110-A) of the semiconductor substrate into the semiconductor substrate , wherein the semiconductor substrate has adjacent to the substrate doping region a p doped region (110-1), and wherein the substrate doping region at least partially forms the conversion region in the semiconductor substrate , wherein the substrate doping region extends from a first main surface region (110-A) of the semiconductor substrate into the semiconductor substrate , wherein the semiconductor substrate has adjacent to the substrate doping region a p doped region (110-1), and wherein the substrate doping region at least partially forms the conversion region in the semiconductor substrate , a readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type, wherein the readout node is configured to readout the photo generated charge carriers ; a control electrode arranged in the substrate doping region and having the p-doping type; a trench structure which is arranged laterally with respect to the substrate doping region and extends vertically with respect to the first main surface region (110-a) of the semiconductor substrate in the semiconductor substrate ; and a substrate contact region having the p doping type in the semiconductor substrate and adjacent to the first main surface region (110-A) of the semiconductor substrate ; wherein the substrate contact region is arranged between the first main surface region (110-A) of the semiconductor substrate and a first main surface region (150-A) of the trench structure , and wherein the first main surface region (150-A) of the trench structure forms a top end of the trench structure and is offset from the first main surface region (110-A) in the depth direction of the semiconductor substrate . <EOS>