A Schottky barrier diode, comprising: a semiconductor body with a main surface , a doped region of the semiconductor body, the doped region extending to the main surface , a further doped region of the semiconductor body within the doped region , the further doped region extending to the main surface , the doped region and the further doped region having opposite types of electric conductivity, a subregion (DPWell) and a further subregion (SPWell) of the further doped region , the subregions (DPWell, SPWell) being contiguous with one another, the further subregion (SPWell) comprising a higher doping concentration than the subregion (DPWell) the subregion (DPWell) and the further subregion (SPWELL) having the same type of electric conductivity as the further doped region , a silicide layer on the main surface , the silicide layer forming a Schottky interface with the doped region , the further subregion (SPWELL) being located closer to the Schottky interface than the subregion (DPWELL), an electric contact on the doped region , the further doped region being located between the Schottky interface and the position at which the electric contact contacts the doped region , and a further electric contact applied on the further subregion (SPWELL) and electrically connecting the further doped region with the silicide layer , an insulating region at the main surface between the electric contact and the further electric contact , characterized in that a field plate is arranged on the insulating region , the insulating region separating the field plate from the further doped region , and the electric contact electrically connecting the doped region with the field plate . a semiconductor body with a main surface , a doped region of the semiconductor body, the doped region extending to the main surface , a further doped region of the semiconductor body within the doped region , the further doped region extending to the main surface , the doped region and the further doped region having opposite types of electric conductivity, a subregion (DPWell) and a further subregion (SPWell) of the further doped region , the subregions (DPWell, SPWell) being contiguous with one another, the further subregion (SPWell) comprising a higher doping concentration than the subregion (DPWell) the subregion (DPWell) and the further subregion (SPWELL) having the same type of electric conductivity as the further doped region , a silicide layer on the main surface , the silicide layer forming a Schottky interface with the doped region , the further subregion (SPWELL) being located closer to the Schottky interface than the subregion (DPWELL), an electric contact on the doped region , the further doped region being located between the Schottky interface and the position at which the electric contact contacts the doped region , and a further electric contact applied on the further subregion (SPWELL) and electrically connecting the further doped region with the silicide layer , an insulating region at the main surface between the electric contact and the further electric contact , characterized in that a field plate is arranged on the insulating region , the insulating region separating the field plate from the further doped region , and the electric contact electrically connecting the doped region with the field plate . <EOS>