A tunnel magnetoresistance, TMR, element , comprising: a cap layer ; a bias layer in direct contact with the cap layer, the bias layer comprising: a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a free layer in direct contact with the bias layer , the free layer comprising: a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a magnesium oxide, MgO, layer in direct contact with the first CoFeB layer; a reference layer in direct contact with the MgO layer, the reference layer comprising: a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a seed layer in direct contact with the second PtMn layer, wherein the first PtMn layer pins the bias layer , and wherein the second PtMn layer pins the fourth CoFe layer , and wherein a thickness of each of the first and second Ta layers is between 0.05 nanometers and 0.3 nanometers. a cap layer ; a bias layer in direct contact with the cap layer, the bias layer comprising: a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a free layer in direct contact with the bias layer , the free layer comprising: a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a magnesium oxide, MgO, layer in direct contact with the first CoFeB layer; a reference layer in direct contact with the MgO layer, the reference layer comprising: a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a seed layer in direct contact with the second PtMn layer, wherein the first PtMn layer pins the bias layer , and wherein the second PtMn layer pins the fourth CoFe layer , <EOS>