mhurhangee/patent-ind-claim-en huggingface dataset:
An image sensor , comprising: - a semiconductor substrate comprising a first continuous portion and a second continuous portion , the first and second continuous portions being non-overlapping; - a multitude of photodiodes (112a, 112b, 112h; 541, 542, 543) disposed in the first portion of the semiconductor substrate, the photodiodes each comprising the semiconductor substrate having a first conductivity type, a doped well region disposed in the semiconductor substrate having a second conductivity type opposite the first conductivity type and facing a surface of the semiconductor substrate, a doped surface region disposed in the semiconductor substrate having the first conductivity type and a doping concentration higher than the semiconductor substrate and surrounding the doped well region ; - analog-to-digital converters disposed in the second portion of the semiconductor substrate, each one of the analog-to-digital converters associated to one of the multitude of photodiodes in a one-to-one relation; and - electrical connections , each one of the electrical connections connected to one of the multitude of photodiodes and to an associated one of the analog-to-digital converters. - a semiconductor substrate comprising a first continuous portion and a second continuous portion , the first and second continuous portions being non-overlapping; - a multitude of photodiodes (112a, 112b, 112h; 541, 542, 543) disposed in the first portion of the semiconductor substrate, the photodiodes each comprising the semiconductor substrate having a first conductivity type, a doped well region disposed in the semiconductor substrate having a second conductivity type opposite the first conductivity type and facing a surface of the semiconductor substrate, a doped surface region disposed in the semiconductor substrate having the first conductivity type and a doping concentration higher than the semiconductor substrate and surrounding the doped well region ; - analog-to-digital converters disposed in the second portion of the semiconductor substrate, each one of the analog-to-digital converters associated to one of the multitude of photodiodes in a one-to-one relation; and - electrical connections , each one of the electrical connections connected to one of the multitude of photodiodes and to an associated one of the analog-to-digital converters.
Monolithically integrated MOS transistor , having: - a doped well region of a first conductivity type, - an active MOS transistor region formed in the well region, with doped source and drain regions of a second conductivity type and at least one MOS channel region extending between the source and drain regions under a respective gate stack , - a dielectric isolation layer of the STI or LOCOS type adjacent to the active MOS transistor region , wherein - well portions of the well region adjoin the MOS channel region in the two opposite lateral longitudinal directions (L1, L2) oriented perpendicular to a notional connecting line (V) extending from the source region through the MOS channel region to the drain region , and said well portions extend as far as a surface (O) of the active MOS transistor region , so that the respective well portion adjoining the MOS channel region is arranged between the MOS channel region and the dielectric isolation layer , characterised in that the dielectric isolation layer laterally surrounds the active MOS transistor region on all sides, and the depth of the well portions is always greater than a depth of the adjacent dielectric isolation layer . - a doped well region of a first conductivity type, - an active MOS transistor region formed in the well region, with doped source and drain regions of a second conductivity type and at least one MOS channel region extending between the source and drain regions under a respective gate stack , - a dielectric isolation layer of the STI or LOCOS type adjacent to the active MOS transistor region , wherein - well portions of the well region adjoin the MOS channel region in the two opposite lateral longitudinal directions (L1, L2) oriented perpendicular to a notional connecting line (V) extending from the source region through the MOS channel region to the drain region , and said well portions extend as far as a surface (O) of the active MOS transistor region , so that the respective well portion adjoining the MOS channel region is arranged between the MOS channel region and the dielectric isolation layer ,
A measuring device for recording a track geometry of a track immediately after a treatment of the track by means of track maintenance machine , wherein the measuring device comprises wheel axles for travelling on the track , connecting elements for mounting to the track maintenance machine and a data interface for exchanging data with the track maintenance machine , characterized in that the measuring device comprises an assembly frame on which an inertial measuring unit is arranged, and that a front wheel axle and a rear wheel axle are mounted on the assembly frame for rotation relative to one another about an axis of rotation extending orthogonally to the wheel axles .
Waveguide junction for a feeding structure of a slot antenna array , the waveguide junction comprising a first waveguide , a second waveguide above the first waveguide , and a slot waveguide arranged between the first waveguide and the second waveguide to couple the first and second waveguides , wherein the longitudinal axis of the slot waveguide is rotated by 40-50°, preferably by 45°, with respect to the longitudinal axis of the first waveguide and with respect to the longitudinal axis of the second waveguide , characterized in that the first waveguide has an end face which runs parallel to the longitudinal axis of the slot waveguide at one of its ends in a region overlapped with the second waveguide. a first waveguide , a second waveguide above the first waveguide , and a slot waveguide arranged between the first waveguide and the second waveguide to couple the first and second waveguides , wherein the longitudinal axis of the slot waveguide is rotated by 40-50°, preferably by 45°, with respect to the longitudinal axis of the first waveguide and with respect to the longitudinal axis of the second waveguide , characterized in that the first waveguide has an end face which runs parallel to the longitudinal axis of the slot waveguide at one of its ends in a region overlapped with the second waveguide.
An upper body of a garment comprising: a body including a rear region stretchy to act a horizontal tension on a wearer; a left sleeve sewed on the left of the rear region , including an upper area of a rear face generating a longitudinal tension of 45 cN or more when it is longitudinally stretched by 20 %; and a right sleeve sewed on the right of the rear region , including an upper area of a rear face generating a longitudinal tension of 45 cN or more when it is longitudinally stretched by 20 %, a left armhole located at the left of the rear region and sewed to the upper area of the rear face of the left sleeve ; and a right armhole located at the right of the rear region and sewed to the upper area of the rear face of the right sleeve , wherein (a) the upper area of the rear face of the left sleeve has a left sewed portion sewed to the left armhole in the rear region and (b) having a size too small to reach the deepest portion of the left armhole before the upper area of the rear face of the left sleeve is sewed to the left armhole ; and (c) the upper area of the rear face of the right sleeve has a right sewed portion sewed to the right armhole in the rear region and (d) having a size too small to reach the deepest portion of the right armhole before the upper area of the rear face of the right sleeve is sewed to the right armhole . a body including a rear region stretchy to act a horizontal tension on a wearer; a left sleeve sewed on the left of the rear region , including an upper area of a rear face generating a longitudinal tension of 45 cN or more when it is longitudinally stretched by 20 %; and a right sleeve sewed on the right of the rear region , including an upper area of a rear face generating a longitudinal tension of 45 cN or more when it is longitudinally stretched by 20 %, a left armhole located at the left of the rear region and sewed to the upper area of the rear face of the left sleeve ; and a right armhole located at the right of the rear region and sewed to the upper area of the rear face of the right sleeve , wherein (a) the upper area of the rear face of the left sleeve has a left sewed portion sewed to the left armhole in the rear region and (b) having a size too small to reach the deepest portion of the left armhole before the upper area of the rear face of the left sleeve is sewed to the left armhole ; and (c) the upper area of the rear face of the right sleeve has a right sewed portion sewed to the right armhole in the rear region and (d) having a size too small to reach the deepest portion of the right armhole before the upper area of the rear face of the right sleeve is sewed to the right armhole .
Belt as a continuous traction means for conveyor belts of bale presses or bale wrappers, comprising at least one fabric layer embedded at least in certain regions in a polymer layer , for creating a continuous belt reinforced by at least one fabric layer , characterised in that cross-stiffening elements are embedded in the polymer layer , for increasing a transverse rigidity (QS) of the belt , whereby the cross-stiffening elements are essentially oriented in a transverse direction (Q) of the belt , and the belt exhibits, at least in the region of the cross-stiffening elements , a ratio of rigidity (QS/LS) between the transverse rigidity (QS) and a longitudinal rigidity (LS) of at least 2:1.
A pants-type absorbent article , comprising: an abdominal-side part and a back-side part , and seal parts which join end parts of the abdominal-side part in a width direction (W) and end parts of the back-side part in the width direction (W), which are superimposed so that inner surfaces thereof face each other, to each other, wherein the seal parts comprise a plurality of fused parts which fuse the end parts of the abdominal-side part in the width direction (W) and the end parts of the back-side part in the width direction (W) to each other, the fused parts being aligned in a length direction (L) while being spaced apart from each other, all of the fused parts each include a thin part having a small relative thickness and a thick part having a large relative thickness, all of the thin parts being arranged on an inner side of the fused parts in the width direction (W), the fused parts each comprise a recessed groove , a peripheral wall and a bottom wall , the bottom wall comprises the thin part having a small relative thickness and the thick part having a large relative thickness, and the small relative thickness and the large relative thickness are dimensions in a thickness direction (T) of the absorbent article . an abdominal-side part and a back-side part , and seal parts which join end parts of the abdominal-side part in a width direction (W) and end parts of the back-side part in the width direction (W), which are superimposed so that inner surfaces thereof face each other, to each other, the seal parts comprise a plurality of fused parts which fuse the end parts of the abdominal-side part in the width direction (W) and the end parts of the back-side part in the width direction (W) to each other, the fused parts being aligned in a length direction (L) while being spaced apart from each other, all of the fused parts each include a thin part having a small relative thickness and a thick part having a large relative thickness, all of the thin parts being arranged on an inner side of the fused parts in the width direction (W), the fused parts each comprise a recessed groove , a peripheral wall and a bottom wall , the bottom wall comprises the thin part having a small relative thickness and the thick part having a large relative thickness, and the small relative thickness and the large relative thickness are dimensions in a thickness direction (T) of the absorbent article .
An intergluteal spacing device for selectively applying and relieving pressure perianally, said device comprising: a. an elongated body comprising an anterior end and a posterior end , and further comprising a central portion between said anterior end and said posterior end; whereby said central portion is adapted to position over at least a part of a user perianal area; b. said central portion comprising at least one concave portion , oriented opposite at least a portion of the perianal area, providing at least one cavity for the adjustment of pressure in and/or around the anus and/or external hemorrhoidal plexus; c. characterized by said intergluteal spacing device comprising a generally trapezoidal cross-sectional shape, said trapezoidal cross-section comprising a wide bottom and a narrow top . a. an elongated body comprising an anterior end and a posterior end , and further comprising a central portion between said anterior end and said posterior end; whereby said central portion is adapted to position over at least a part of a user perianal area; b. said central portion comprising at least one concave portion , oriented opposite at least a portion of the perianal area, providing at least one cavity for the adjustment of pressure in and/or around the anus and/or external hemorrhoidal plexus; c. characterized by said intergluteal spacing device comprising a generally trapezoidal cross-sectional shape, said trapezoidal cross-section comprising a wide bottom and a narrow top .
A method of providing runtime debugging for containerized services in container environments, the method comprising: receiving a request for a service at a container environment, wherein: the container environment comprises a service mesh and a plurality of services encapsulated in a plurality of containers; and the service is encapsulated in first one or more containers; determining that the request should be routed to a debug instance of the service; instantiating the debug instance of the service, wherein the debug instance is encapsulated in second one or more containers and comprises: code implementing the service; and one or more debugging utilities; routing, by the service mesh, the request to the debug instance. receiving a request for a service at a container environment, wherein: the container environment comprises a service mesh and a plurality of services encapsulated in a plurality of containers; and the service is encapsulated in first one or more containers; the container environment comprises a service mesh and a plurality of services encapsulated in a plurality of containers; and the service is encapsulated in first one or more containers; determining that the request should be routed to a debug instance of the service; instantiating the debug instance of the service, wherein the debug instance is encapsulated in second one or more containers and comprises: code implementing the service; and one or more debugging utilities; code implementing the service; and one or more debugging utilities; routing, by the service mesh, the request to the debug instance.
A ballast water treatment apparatus , comprising: a ballast water transport line configured to transport ballast water between a first location (A) and a second location (B), the transported ballast water being passed through at least one injector ; and a plasma generation device configured to be fed with a feed gas, and configured to generate a feed gas plasma by a streamer type discharge in a discharge area to provide a treated gas at a treated-gas outlet ; wherein the injector comprises a liquid passage being configured for passing through the transported ballast water and having an area constructed such as to increase a velocity of the passed-through water in a region of increased velocity, thus reducing the static pressure, and an injector gas inlet provided in the region with increased velocity; wherein the treated-gas outlet is in gaseous connection with the injector gas inlet such that the treated gas is sucked into the passed-through ballast water for introducing and mixing the treated gas into the passed-through water in the liquid passage , wherein the at least one injector is a Venturi injector , wherein the feed gas comprises oxygen, wherein the plasma generation device comprises a discharge pipe configured to pass the feed gas through a feed gas passage , wherein the treated-gas outlet of the discharge pipe opens out into a constricted area , of the liquid passage of the injector . a ballast water transport line configured to transport ballast water between a first location (A) and a second location (B), the transported ballast water being passed through at least one injector ; and a plasma generation device configured to be fed with a feed gas, and configured to generate a feed gas plasma by a streamer type discharge in a discharge area to provide a treated gas at a treated-gas outlet ; wherein the injector comprises a liquid passage being configured for passing through the transported ballast water and having an area constructed such as to increase a velocity of the passed-through water in a region of increased velocity, thus reducing the static pressure, and an injector gas inlet provided in the region with increased velocity; wherein the treated-gas outlet is in gaseous connection with the injector gas inlet such that the treated gas is sucked into the passed-through ballast water for introducing and mixing the treated gas into the passed-through water in the liquid passage , wherein the at least one injector is a Venturi injector , wherein the feed gas comprises oxygen, wherein the plasma generation device comprises a discharge pipe configured to pass the feed gas through a feed gas passage , wherein the treated-gas outlet of the discharge pipe opens out into a constricted area , of the liquid passage of the injector .
A computer-implemented method for processing seismic data characterized by comprising: jointly inverting primary wave (P) seismic data (PP data) and shear wave (S) seismic data (PS data) as part of a nonlinear tomography process which adheres to one or more co-depthing constraints, said jointly inverting step comprising: kinematically re-migrating the seismic data using PP and PS residual moveout (RMO) invariants and at least one of P or S horizon invariants; evaluating a cost function which includes at least one term associated with the one or more co-depthing constraints; performing a linear update of multi-layer velocity attributes using an output of the evaluating step which is constrained by co-depthing; and repositioning the at least one of the P or S horizons, wherein the one or more co-depthing constraints includes a reflector constraint which minimizes discrepancies between kinematically re-migrated seismic reflectors in PP and PS domains by adding an additional weighted term to the cost function. kinematically re-migrating the seismic data using PP and PS residual moveout (RMO) invariants and at least one of P or S horizon invariants; evaluating a cost function which includes at least one term associated with the one or more co-depthing constraints; performing a linear update of multi-layer velocity attributes using an output of the evaluating step which is constrained by co-depthing; and repositioning the at least one of the P or S horizons,
A three-dimensionally formed structural member , comprising: a first cover layer made of a metallic material; a second cover layer made of a metallic material; a core layer made of a foam material and being arranged between the first cover layer and the second cover layer , wherein the core layer has a density in a range between 35 kg/m 3 and 750 kg/m 3 ; wherein the structural member is temperature-resistant at a temperature of 180°C, characterized in that the structural member further comprises an adhesive material adhering the foam material to the first cover layer and/or adhering the foam material to the second cover layer ; wherein the adhesive material has a melting point above 180°C. a first cover layer made of a metallic material; a second cover layer made of a metallic material; a core layer made of a foam material and being arranged between the first cover layer and the second cover layer , wherein the core layer has a density in a range between 35 kg/m 3 and 750 kg/m 3 ; wherein the structural member is temperature-resistant at a temperature of 180°C, an adhesive material adhering the foam material to the first cover layer and/or adhering the foam material to the second cover layer ; wherein the adhesive material has a melting point above 180°C.
An electrochemical cell comprising: a first cell including a first electrolyte layer containing an oxide ion conductor; a second cell including a second electrolyte layer containing a proton conductor; a gas path provided between the first cell and the second cell , wherein the first cell and the second cell face each other across the gas path , the first cell further includes a first electrode and a second electrode , in the first cell , the first electrolyte layer is disposed between the first electrode and the second electrode , the second cell further includes a third electrode and a fourth electrode , in the second cell , the second electrolyte layer is disposed between the third electrode and the fourth electrode , the first electrode and the third electrode face each other, hydrogen is generated at the first electrode , oxygen is generated at the second electrode , hydrogen is converted to protons at the third electrode , and hydrogen is generated at the fourth electrode , wherein the first cell and the second cell are electrically insulated in the gas path . a first cell including a first electrolyte layer containing an oxide ion conductor; a second cell including a second electrolyte layer containing a proton conductor; a gas path provided between the first cell and the second cell , wherein the first cell and the second cell face each other across the gas path , the first cell further includes a first electrode and a second electrode , in the first cell , the first electrolyte layer is disposed between the first electrode and the second electrode , the second cell further includes a third electrode and a fourth electrode , in the second cell , the second electrolyte layer is disposed between the third electrode and the fourth electrode , the first electrode and the third electrode face each other, hydrogen is generated at the first electrode , oxygen is generated at the second electrode , hydrogen is converted to protons at the third electrode , and hydrogen is generated at the fourth electrode , wherein the first cell and the second cell are electrically insulated in the gas path .
A dosage form comprising: bromocriptine mesylate and one or more excipients; wherein the dosage form provides for absorption of a substantial amount of bromocriptine through the gastric and/or intestinal mucosa when administered to a subject; wherein the bromocriptine has a Dv90 of about 15 μm or lower; wherein the bromocriptine has a particle size distribution with a span of about 2 or lower; and wherein the dosage form provides a dissolution profile, when tested in USP Apparatus Type 2 Paddle Method at 50 rpm in 500 mL of 0.1 N hydrochloric acid at about 37° C, wherein at least about 80% of the bromocriptine has been released at about 30 minutes; wherein the dosage form is in the form of a solid dosage form.