mhurhangee/patent-ind-claim-en huggingface dataset:
A radio parameter control apparatus comprising: measurement report collection means for collecting a plurality of measurement reports generated by at least one mobile station , each of the measurement reports containing a measurement result of radio quality of a first cell managed by a base station ; and radio parameter determination means for determining, based on the plurality of measurement reports so as to reduce the number of cell-edge mobile stations deemed to be located at a cell edge between the first cell and a neighboring cell , an updated value of a radio parameter capable of changing coverage of the first cell , wherein each of the plurality of measurement reports further contains a measurement result of radio quality of the neighboring cell , and characterised in that the number of cell-edge mobile stations is determined using a difference between radio quality of the first cell and radio quality of the neighboring cell . measurement report collection means for collecting a plurality of measurement reports generated by at least one mobile station , each of the measurement reports containing a measurement result of radio quality of a first cell managed by a base station ; and radio parameter determination means for determining, based on the plurality of measurement reports so as to reduce the number of cell-edge mobile stations deemed to be located at a cell edge between the first cell and a neighboring cell , an updated value of a radio parameter capable of changing coverage of the first cell , wherein each of the plurality of measurement reports further contains a measurement result of radio quality of the neighboring cell , and characterised in that the number of cell-edge mobile stations is determined using a difference between radio quality of the first cell and radio quality of the neighboring cell .
A method for manufacturing a display substrate, comprising: forming a pixel definition layer on a lower surface of a base so as to define a pixel area; forming a spacer on a lower surface of the pixel definition layer ; arranging a mask plate under the spacer ; and moving an evaporation source along a first direction parallel to the lower surface of the base , so as to form an organic light emitting layer in the pixel area, wherein an acute angle between a side surface of the pixel definition layer in the first direction for defining the pixel area and the lower surface of the base is a first angle ( α ), wherein an acute angle between a border of an evaporation area of the evaporation source in the first direction and the lower surface of the base is a second angle (β), the second angle (β) being greater than or equal to the first angle ( α ), and when the evaporation source is moved in the first direction so as to start forming the organic light emitting layer in the pixel area, the spacer under the pixel definition layer and the mask plate under the spacer do not block a first border of the evaporation area , and when the evaporation source is moved in the first direction so as to stop forming the organic light emitting layer in the pixel area, the spacer under the pixel definition layer and the mask plate under the spacer do not block a second border (6") of the evaporation area . forming a pixel definition layer on a lower surface of a base so as to define a pixel area; forming a spacer on a lower surface of the pixel definition layer ; arranging a mask plate under the spacer ; and moving an evaporation source along a first direction parallel to the lower surface of the base , so as to form an organic light emitting layer in the pixel area, wherein an acute angle between a side surface of the pixel definition layer in the first direction for defining the pixel area and the lower surface of the base is a first angle ( α ), wherein an acute angle between a border of an evaporation area of the evaporation source in the first direction and the lower surface of the base is a second angle (β), the second angle (β) being greater than or equal to the first angle ( α ), and when the evaporation source is moved in the first direction so as to start forming the organic light emitting layer in the pixel area, the spacer under the pixel definition layer and the mask plate under the spacer do not block a first border of the evaporation area , and when the evaporation source is moved in the first direction so as to stop forming the organic light emitting layer in the pixel area, the spacer under the pixel definition layer and the mask plate under the spacer do not block a second border (6") of the evaporation area .
A polypeptide having an amino acid sequence ranging from the amino-acid residue at position 175 to the amino-acid residue at position 210 in SEQ ID NO:1 and which consists of 36; 37; 38; 39; 40; 41; 42; 43; 44; 45; 46; 47; 48; 49; 50; 51; 52; 53; 54; 55; 56; 57; 58; 59; 60; 61; 62; 63 ; 64; 65; 66; 67; 68; 69; 70; 71; 72; 73; 74; 75; 76; 77; 78; 79; 80; 81; 82; 83; 84; 85; 86; 87; 88; 89; 90; 91; 92; 93; 94; 95; 96; 97; 98; 99; or 100 amino acids.
Disconnecting apparatus for interrupting a DC current of a current path , in particular for an on-board electrical system of a motor vehicle , having - a hybrid switch with a current-carrying mechanical contact system and with a first semiconductor switch connected in parallel with the latter, which hybrid switch is connected in a first current path , and - a switchable resistor cascade with at least one ohmic resistor , which switchable resistor cascade is connected in parallel with the contact system of the hybrid switch , characterized - in that the resistor cascade has at least one second semiconductor switch which is connected in series with the at least one resistor , - wherein a third semiconductor switch is connected in series with the resistor cascade and the output side of which is routed to a second current path , and - wherein the contact system of the hybrid switch is able to be short-circuited by means of the series connection comprising the resistor cascade and the third semiconductor switch . - a hybrid switch with a current-carrying mechanical contact system and with a first semiconductor switch connected in parallel with the latter, which hybrid switch is connected in a first current path , and - a switchable resistor cascade with at least one ohmic resistor , which switchable resistor cascade is connected in parallel with the contact system of the hybrid switch , characterized - in that the resistor cascade has at least one second semiconductor switch which is connected in series with the at least one resistor , - wherein a third semiconductor switch is connected in series with the resistor cascade and the output side of which is routed to a second current path , and - wherein the contact system of the hybrid switch is able to be short-circuited by means of the series connection comprising the resistor cascade and the third semiconductor switch .
An insulated wire having at least one layer of coating of the wire, comprising a thermosetting resin layer, at the outer periphery of a conductor , wherein the thermosetting resin layer is comprised of thermosetting resin layers having a laminated structure formed by coating and baking a thermosetting resin varnish; and wherein, in said laminated structure, an innermost layer having contact with the conductor comprises a thermosetting resin having an imide bond and is a layer having an average thickness of more than 5μm and 10μm or less as determined by a 16-point measurement, and wherein a ratio of an average thickness of the innermost layer having contact with the conductor to a total thickness of the thermosetting resin layers is from 5 to 10%. wherein the thermosetting resin layer is comprised of thermosetting resin layers having a laminated structure formed by coating and baking a thermosetting resin varnish; and wherein, in said laminated structure, an innermost layer having contact with the conductor comprises a thermosetting resin having an imide bond and is a layer having an average thickness of more than 5μm and 10μm or less as determined by a 16-point measurement, and wherein a ratio of an average thickness of the innermost layer having contact with the conductor to a total thickness of the thermosetting resin layers is from 5 to 10%.
A memory device, comprising: a switching device, wherein the switching device comprises: a first electrode (11; 21; 123; 166); a second electrode (12; 22; 124; 167); and a switching layer (10; 20; 122; 165) between the first and second electrodes (11, 12; 21, 22; 123, 166; 124, 167), and a memory element in contact with the first electrode ; wherein: the first electrode is between the memory element and the switching layer , the switching layer is in series with the memory element , the switching layer (10; 20; 122; 165) comprises a composition of arsenic As in a range of 15 at% to 46 at%, selenium Se in a range of 27 at% to 60 at%, and germanium Ge in a range of 10 at% to 25 at%, wherein the composition of the switching layer (10; 20; 122; 165) is tellurium Te free, and wherein the switching layer (10; 20; 122; 165) is less than 50 nanometers, nm, thick. a switching device, wherein the switching device comprises: a first electrode (11; 21; 123; 166); a second electrode (12; 22; 124; 167); and a switching layer (10; 20; 122; 165) between the first and second electrodes (11, 12; 21, 22; 123, 166; 124, 167), and a first electrode (11; 21; 123; 166); a second electrode (12; 22; 124; 167); and a switching layer (10; 20; 122; 165) between the first and second electrodes (11, 12; 21, 22; 123, 166; 124, 167), and a memory element in contact with the first electrode ; wherein: the first electrode is between the memory element and the switching layer , the switching layer is in series with the memory element , the switching layer (10; 20; 122; 165) comprises a composition of arsenic As in a range of 15 at% to 46 at%, selenium Se in a range of 27 at% to 60 at%, and germanium Ge in a range of 10 at% to 25 at%, wherein the composition of the switching layer (10; 20; 122; 165) is tellurium Te free, and wherein the switching layer (10; 20; 122; 165) is less than 50 nanometers, nm, thick. the first electrode is between the memory element and the switching layer , the switching layer is in series with the memory element , the switching layer (10; 20; 122; 165) comprises a composition of arsenic As in a range of 15 at% to 46 at%, selenium Se in a range of 27 at% to 60 at%, and germanium Ge in a range of 10 at% to 25 at%, wherein the composition of the switching layer (10; 20; 122; 165) is tellurium Te free, and wherein the switching layer (10; 20; 122; 165) is less than 50 nanometers, nm, thick.
A method for isolating and amplifying a subject's mitochondrial deoxyribonucleic acid (mtDNA) comprising steps of: ∘ Identifying the subject's haplogroup from a tissue-biopsy sample that had been collected from the subject. ∘ obtaining a blood plasma sample that had been collected from the subject; ∘ isolating cell-free deoxyribonucleic acid (cfDNA) from the plasma sample; ∘ amplifying the mtDNA within the isolated cfDNA using a polymerase chain reaction with a first primer pair and a second primer pair, wherein the first primer pair consists of SEQ ID NO: 1 and SEQ ID NO: 2, and the second primer pair consists of SEQ ID NO: 3 and SEQ ID NO: 4; ∘ comparing the subject's amplified mtDNA with mtDNA of the subject's haplogroup; ∘ identifying differences between the amplified mtDNA and the subject's haplogroup; and ∘ reporting the identified differences. ∘ Identifying the subject's haplogroup from a tissue-biopsy sample that had been collected from the subject. ∘ obtaining a blood plasma sample that had been collected from the subject; ∘ isolating cell-free deoxyribonucleic acid (cfDNA) from the plasma sample; ∘ amplifying the mtDNA within the isolated cfDNA using a polymerase chain reaction with a first primer pair and a second primer pair, wherein the first primer pair consists of SEQ ID NO: 1 and SEQ ID NO: 2, and the second primer pair consists of SEQ ID NO: 3 and SEQ ID NO: 4; ∘ comparing the subject's amplified mtDNA with mtDNA of the subject's haplogroup; ∘ identifying differences between the amplified mtDNA and the subject's haplogroup; and ∘ reporting the identified differences.
A modified cross-section hollow fiber having a fiber center (M), comprising: a hollow part , a shape maintaining part , and volume control parts , wherein the volume control parts have shape protruding away from the fiber center (M) and have respective end part with a rounded shape, wherein when the top of the end part of the volume control part is defined as a peak and a space between adjacent volume control parts is defined as a valley , wherein a curvature radius of the peak is defined as R and a curvature radius of the valley is defined as r, and R and r values may be determined to be the same as or different from each other for each volume control part, and wherein a deviation of the curvature radius R of the peak and the curvature radius r of the valley is defined as Z, the following conditions are satisfied. − 3 ≤ Z ≤ 4 0.9 ≤ ∑ Z = 1 N Z ≤ 1.8 Herein, Z: R - r N: The number of volume control parts . a hollow part , a shape maintaining part , and volume control parts , wherein the volume control parts have shape protruding away from the fiber center (M) and have respective end part with a rounded shape, wherein when the top of the end part of the volume control part is defined as a peak and a space between adjacent volume control parts is defined as a valley , wherein a curvature radius of the peak is defined as R and a curvature radius of the valley is defined as r, and R and r values may be determined to be the same as or different from each other for each volume control part, and wherein a deviation of the curvature radius R of the peak and the curvature radius r of the valley is defined as Z, the following conditions are satisfied. − 3 ≤ Z ≤ 4 0.9 ≤ ∑ Z = 1 N Z ≤ 1.8 Herein, Z: R - r N: The number of volume control parts . Z: R - r N: The number of volume control parts .
A radially expandable plunger head assembly for use in a sealant cartridge assembly including a sealant-containing cartridge and a plunger slidably mounted inside the sealant-containing cartridge , the plunger head assembly comprising: a ram head slidingly mounted on a front end of a plunger rod having a front face structured and arranged to contact a front plunger end , and a rear collet engagement surface ; and a radially expandable collet mounted on the front end of the plunger rod having at least one radially expandable finger structured and arranged to contact the collet engagement surface of the ram head and move radially outward toward a sidewall of the plunger when the plunger rod is advanced forward inside the sealant-containing cartridge ; characterized in that the plunger comprises a front wiper ring , and the at least one radially expandable finger of the collet contacts the plunger at an axial location adjacent to the front wiper ring , and in that the at least one radially expandable finger of the collet comprises a ram-engaging inner surface and an outer contact ring segment . a ram head slidingly mounted on a front end of a plunger rod having a front face structured and arranged to contact a front plunger end , and a rear collet engagement surface ; and a radially expandable collet mounted on the front end of the plunger rod having at least one radially expandable finger structured and arranged to contact the collet engagement surface of the ram head and move radially outward toward a sidewall of the plunger when the plunger rod is advanced forward inside the sealant-containing cartridge ;
3-Acylbenzamides of the formula (I) in which the symbols and indices are defined as follows: R x represents (C 1 -C 6 )-alkyl, X represents halogen, (C 1 -C 6 )-alkyl, halo-(C 1 -C 6 )-alkyl, (C 3 -C 6 )-cycloalkyl, R 1 O, R 2 S(O) n or R 1 O-(C 1 -C 6 )-alkyl, Y represents halogen, (C 1 -C 6 )-alkyl, halo-(C 1 -C 6 )-alkyl or R 1 O, R 2 S(O) n , Z represents (C 1 -C 6 ) -alkyl, (C 3 -C 6 )-cycloalkyl, (C 2 -C 6 )-alkenyl, (C 3 -C 6 )-alkynyl, halo-(C 1 -C 6 ) -alkyl, (C 1 -C 6 )-alkyl-O-(C 1 -C 6 )-alkyl, (C 1 -C 6 )-alkyl-C(O), (C 1 -C 6 )-alkyl-C(O)-(C 1 -C 6 )-alkyl, phenyl or heterocyclyl, where the radicals phenyl, heterocyclyl, (C 2 -C 6 )-alkenyl, (C 3 -C 6 )-alkynyl and (C 3 -C 6 )-cycloalkyl each carry m substituents R 3 , R 1 represents (C 1 -C 6 )-alkyl or halo-(C 1 -C 6 )-alkyl, R 2 represents (C 1 -C 6 )-alkyl, R 3 represents halogen, (C 1 -C 6 )-alkyl, (C 1 -C 3 )-alkyl-O-C(O), cyano or halo-(C 1 -C 6 )-alkyl, m represents 0, 1, 2, 3 or 4, n represents 0, 1 or 2. R x represents (C 1 -C 6 )-alkyl, X represents halogen, (C 1 -C 6 )-alkyl, halo-(C 1 -C 6 )-alkyl, (C 3 -C 6 )-cycloalkyl, R 1 O, R 2 S(O) n or R 1 O-(C 1 -C 6 )-alkyl, Y represents halogen, (C 1 -C 6 )-alkyl, halo-(C 1 -C 6 )-alkyl or R 1 O, R 2 S(O) n , Z represents (C 1 -C 6 ) -alkyl, (C 3 -C 6 )-cycloalkyl, (C 2 -C 6 )-alkenyl, (C 3 -C 6 )-alkynyl, halo-(C 1 -C 6 ) -alkyl, (C 1 -C 6 )-alkyl-O-(C 1 -C 6 )-alkyl, (C 1 -C 6 )-alkyl-C(O), (C 1 -C 6 )-alkyl-C(O)-(C 1 -C 6 )-alkyl, phenyl or heterocyclyl, where the radicals phenyl, heterocyclyl, (C 2 -C 6 )-alkenyl, (C 3 -C 6 )-alkynyl and (C 3 -C 6 )-cycloalkyl each carry m substituents R 3 , R 1 represents (C 1 -C 6 )-alkyl or halo-(C 1 -C 6 )-alkyl, R 2 represents (C 1 -C 6 )-alkyl, R 3 represents halogen, (C 1 -C 6 )-alkyl, (C 1 -C 3 )-alkyl-O-C(O), cyano or halo-(C 1 -C 6 )-alkyl, m represents 0, 1, 2, 3 or 4, n represents 0, 1 or 2.
Apparatus for forming bags comprising: - a supply device for supplying a first tape material (M) to said apparatus along an advancing path (P) which is defined in said apparatus , - said supply device being configured to supply said first tape material (M) at a first supply speed (VA); - an additional supply device for supplying a second tape material (N) to the apparatus along the advance path (P), - said additional supply device being configured to supply said second tape material (N) at a supply speed (VB) less than or equal to said first supply speed (VA); - a step cutting device for stepwise cutting said second tape material (N) so as to obtain sheets having a desired longitudinal extent (D1); - a forming station for folding said first tape material (M) in order to form a tubular body of said first tape material (M) having at the inner side one or more sheets of said second tape material (N), a coupling device which is interposed between said cutting device and said forming station in order to couple said sheets at predetermined intervals to said first tape material (M); - characterized in that said coupling device comprises a guide device for guiding said sheets of said second tape material (N) on said first tape material (M) towards said forming station in order to prevent said sheets from moving with respect to said first tape material (M). - a supply device for supplying a first tape material (M) to said apparatus along an advancing path (P) which is defined in said apparatus , - said supply device being configured to supply said first tape material (M) at a first supply speed (VA); - an additional supply device for supplying a second tape material (N) to the apparatus along the advance path (P), - said additional supply device being configured to supply said second tape material (N) at a supply speed (VB) less than or equal to said first supply speed (VA); - a step cutting device for stepwise cutting said second tape material (N) so as to obtain sheets having a desired longitudinal extent (D1); - a forming station for folding said first tape material (M) in order to form a tubular body of said first tape material (M) having at the inner side one or more sheets of said second tape material (N), a coupling device which is interposed between said cutting device and said forming station in order to couple said sheets at predetermined intervals to said first tape material (M); - characterized in that said coupling device comprises a guide device for guiding said sheets of said second tape material (N) on said first tape material (M) towards said forming station in order to prevent said sheets from moving with respect to said first tape material (M).
A coolant supply device for a grinding tool for use on a machine tool including a tool-carrying work spindle, said coolant supply device comprising - a base body (A2b) comprising at least two engaging portions (A2a), - a line unit (A1) which is arranged on said base body (A2b) and has at least one discharge opening (A1a) for discharging coolant to a predeterminable machining area on the grinding tool, and - a clamping device (A2c) for releasably attaching said coolant supply device (A2) to the grinding tool, wherein said coolant supply device (A2) can be stationarily fixed via said engagement portions (A2a) to a connecting ring of the work spindle of the machine tool via clamping elements in said engagement portions (A2a) in such a way that a gap between the coolant supply device and the grinding tool is set when the grinding tool is received on the work spindle of the machine tool. - a base body (A2b) comprising at least two engaging portions (A2a), - a line unit (A1) which is arranged on said base body (A2b) and has at least one discharge opening (A1a) for discharging coolant to a predeterminable machining area on the grinding tool, and - a clamping device (A2c) for releasably attaching said coolant supply device (A2) to the grinding tool,
Composite body which comprises a first part which is formed by a first alloy and a second part which is formed by an iron-based, cobalt-based or nickel-based alloy, wherein the parts have been joined to one another by diffusion of alloy elements of the first part and/or the second part into the other part and the first alloy comprises the following constituents in the following proportions in % by weight: C = 0.02 - 0.3; Si = 0.01 - 1.1; Mn = 0.01 - 2.0; P < 0.06; S < 0.5; Cr = 11.0 - 20.0; Mo = 0.3 - 1.0; Ni < 1.1; Nb or/and Ta < 1.1; N < 0.03; Co < 1.1; balance Fe and production-related impurities. C = 0.02 - 0.3; Si = 0.01 - 1.1; Mn = 0.01 - 2.0; P < 0.06; S < 0.5; Cr = 11.0 - 20.0; Mo = 0.3 - 1.0; Ni < 1.1; Nb or/and Ta < 1.1; N < 0.03; Co < 1.1; balance Fe and production-related impurities.
A transgenic swine comprising: (a) a mutation of an endogenous p53 gene, wherein the p53 mutation is a missense mutation and results in an amino acid substitution corresponding to an R167H amino acid substitution, or a substitution corresponding to amino acid position Y220, G245, R248, or R273 in human p53; wherein said amino acid substitution results in an altered expression of a p53 translation product and/or in expression of a non-functional p53 protein that corresponds to an alteration in a human p53 gene associated with a lymphoma, a renal tumor, a mesenteric tumor or an osteogenic tumor; and (b) a mutation of an endogenous KRAS gene, wherein the KRAS mutation is an activating mutation. (a) a mutation of an endogenous p53 gene, wherein the p53 mutation is a missense mutation and results in an amino acid substitution corresponding to an R167H amino acid substitution, or a substitution corresponding to amino acid position Y220, G245, R248, or R273 in human p53; wherein said amino acid substitution results in an altered expression of a p53 translation product and/or in expression of a non-functional p53 protein that corresponds to an alteration in a human p53 gene associated with a lymphoma, a renal tumor, a mesenteric tumor or an osteogenic tumor; and (b) a mutation of an endogenous KRAS gene, wherein the KRAS mutation is an activating mutation.