A material for forming a filling film for inhibiting semiconductor substrate pattern collapse, the material comprising: (A) a polymer having a structural unit shown by the following general formula ; (B) a residual-solvent removal promoter containing a compound shown by the following general formula ; and (C) an organic solvent, wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A), and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5. (A) a polymer having a structural unit shown by the following general formula ; (B) a residual-solvent removal promoter containing a compound shown by the following general formula ; and (C) an organic solvent, wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A), and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5. wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer (A) in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter (B) is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer (A), and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5. <EOS>