A method for forming fence conductors in a semiconductor integrated circuit die, said method comprising the steps of: depositing a first dielectric on a face of a semiconductor substrate ; creating at least one elongated trench in the first dielectric , each elongated trench having a depth and a length extending perpendicular to the depth; depositing a sacrificial film on the first dielectric including walls and a bottom of the at least one elongated trench ; removing portions of the sacrificial film from a face of the first dielectric and the bottom of the at least one elongated trench , wherein only sacrificial films remain on the walls of the at least one elongated trench , wherein the sacrificial films remaining on the walls of each elongated trench define an elongated rectangular loop extending perpendicular to the depth of the trench ; depositing a second dielectric between the sacrificial films on the walls of the at least one trench ; removing the first and second dielectrics until top portions of the sacrificial film are exposed between the first and second dielectrics ; removing the sacrificial films between the first and second dielectrics leaving at least one narrow channel extending in an elongated rectangular loop; depositing conductive material into the at least one elongated rectangular loop-shaped narrow channel; and removing portions of the conductive material until only tops of the conductive material are exposed in the at least one elongated rectangular loop-shaped narrow channel, thereby defining at least one elongated rectangular loop-shaped fence conductor ; and for each elongated rectangular loop-shaped fence conductor , etching portions of the loop-shaped fence conductor to separate the elongated rectangular loop-shaped fence conductor into independent, spaced-apart fence conductors . depositing a first dielectric on a face of a semiconductor substrate ; creating at least one elongated trench in the first dielectric , each elongated trench having a depth and a length extending perpendicular to the depth; depositing a sacrificial film on the first dielectric including walls and a bottom of the at least one elongated trench ; removing portions of the sacrificial film from a face of the first dielectric and the bottom of the at least one elongated trench , wherein only sacrificial films remain on the walls of the at least one elongated trench , wherein the sacrificial films remaining on the walls of each elongated trench define an elongated rectangular loop extending perpendicular to the depth of the trench ; depositing a second dielectric between the sacrificial films on the walls of the at least one trench ; removing the first and second dielectrics until top portions of the sacrificial film are exposed between the first and second dielectrics ; removing the sacrificial films between the first and second dielectrics leaving at least one narrow channel extending in an elongated rectangular loop; depositing conductive material into the at least one elongated rectangular loop-shaped narrow channel; and removing portions of the conductive material until only tops of the conductive material are exposed in the at least one elongated rectangular loop-shaped narrow channel, thereby defining at least one elongated rectangular loop-shaped fence conductor ; and for each elongated rectangular loop-shaped fence conductor , etching portions of the loop-shaped fence conductor to separate the elongated rectangular loop-shaped fence conductor into independent, spaced-apart fence conductors . <EOS>