Method for transferring a layer comprising the following steps: - providing a first substrate having a front face and a rear face and comprising a support forming the rear face and a stack on the support , said stack comprising a first layer made of a first semiconductive material, forming the front face and a second layer made of a second dielectric material, - providing a second substate having a free face and comprising a layer made of a polymer material forming the free face , - gluing the first and second substrates to an interface between the front face of the first substrate and the free face of the second substrate , - removing the support then the second layer of the first substrate , so as to expose the first layer glued on the layer made of a polymer material , and wherein the first substrate is formed with at least one additional stack comprising a third layer made of a third material and a fourth layer made of a fourth material, said at least one additional stack being interleaved between the support and the stack of the first substate , such that the fourth layer is on the side of the support and that the third layer is on the side of the second layer of the stack , the method being characterised in that : - it further comprises at least one additional step configured to remove the fourth layer then the third layer , then the second layer ; - the fourth layer is removed by an etching having a selectivity regarding the third material greater than 5, then - the third layer is removed by an etching having a selectivity regarding the second material greater than 5, then - the second layer is removed by an etching having a selectivity regarding the first material greater than 5. - providing a first substrate having a front face and a rear face and comprising a support forming the rear face and a stack on the support , said stack comprising a first layer made of a first semiconductive material, forming the front face and a second layer made of a second dielectric material, - providing a second substate having a free face and comprising a layer made of a polymer material forming the free face , - gluing the first and second substrates to an interface between the front face of the first substrate and the free face of the second substrate , - removing the support then the second layer of the first substrate , so as to expose the first layer glued on the layer made of a polymer material , and wherein the first substrate is formed with at least one additional stack comprising a third layer made of a third material and a fourth layer made of a fourth material, said at least one additional stack being interleaved between the support and the stack of the first substate , such that the fourth layer is on the side of the support and that the third layer is on the side of the second layer of the stack , - it further comprises at least one additional step configured to remove the fourth layer then the third layer , then the second layer ; - the fourth layer is removed by an etching having a selectivity regarding the third material greater than 5, then - the third layer is removed by an etching having a selectivity regarding the second material greater than 5, then - the second layer is removed by an etching having a selectivity regarding the first material greater than 5. <EOS>