A method for manufacturing a semiconductor device, comprising: forming a separation layer over a substrate ; forming an element-forming layer by the steps comprising: forming an inorganic compound layer over the separation layer; forming a semiconductor element over the separation layer; forming a first electrode layer over and connected to the semiconductor element; forming an inorganic insulating layer over the semiconductor element and the first electrode layer ; forming a layer containing an organic compound over the first electrode layer and the inorganic insulating layer ; and forming a second electrode layer over and in contact with the layer containing an organic compound and with the inorganic insulating layer ; and attaching a first flexible substrate over the second electrode layer, after the steps of forming the separation layer and the element forming layer, and attaching the first flexible substrate, separating the substrate and the element-forming layer from each other at the separation layer so that the element-forming layer is supported by the first flexible substrate, wherein the organic compound has a hole-transporting property or an electron-transporting property, and wherein the first electrode layer, the layer containing an organic compound, and the second electrode layer constitute parts of a storage element or of a light emitting element. forming a separation layer over a substrate ; forming an element-forming layer by the steps comprising: forming an inorganic compound layer over the separation layer; forming a semiconductor element over the separation layer; forming a first electrode layer over and connected to the semiconductor element; forming an inorganic insulating layer over the semiconductor element and the first electrode layer ; forming a layer containing an organic compound over the first electrode layer and the inorganic insulating layer ; and forming a second electrode layer over and in contact with the layer containing an organic compound and with the inorganic insulating layer ; and forming an inorganic compound layer over the separation layer; forming a semiconductor element over the separation layer; forming a first electrode layer over and connected to the semiconductor element; forming an inorganic insulating layer over the semiconductor element and the first electrode layer ; forming a layer containing an organic compound over the first electrode layer and the inorganic insulating layer ; and forming a second electrode layer over and in contact with the layer containing an organic compound and with the inorganic insulating layer ; and attaching a first flexible substrate over the second electrode layer, after the steps of forming the separation layer and the element forming layer, and attaching the first flexible substrate, separating the substrate and the element-forming layer from each other at the separation layer so that the element-forming layer is supported by the first flexible substrate, wherein the organic compound has a hole-transporting property or an electron-transporting property, and wherein the first electrode layer, the layer containing an organic compound, and the second electrode layer constitute parts of a storage element or of a light emitting element. <EOS>