Neutrino detector device , being configured for detecting neutrinos, comprising - at least one target detector including a target crystal , which is adapted for creating phonons in response to an interaction of neutrinos to be detected with the target crystal , and a target temperature sensor , which is arranged for sensing a temperature change in response to an absorption of phonons created in the target crystal , and - an inner veto detector comprising at least one inner veto component with an inner veto temperature sensor , wherein the at least one inner veto component is adapted for supporting the at least one target detector and for an anticoincidence based discrimination of background interaction events by creating phonons in response to the background interaction events and sensing a temperature change in response to an absorption of the phonons with the inner veto temperature sensor , wherein - the neutrino detector device is configured for an operation at cryogenic temperatures, - a crystal volume of the target crystal and a size of the target temperature sensor of the at least one target detector are selected such that an over-ground sensitivity threshold of the at least one target detector is below 180 eV, and - the at least one inner veto component surrounds the at least one target detector , so that the at least one target detector is arranged within the inner veto detector , characterized in that - an outer veto detector is provided for accommodating the inner veto detector , wherein the outer veto detector comprises at least one outer veto component being adapted for creating phonons in response to an interaction with background radiation and having an outer veto temperature sensor , which is arranged for sensing a temperature change in response to an absorption of phonons created in the at least one outer veto component . - at least one target detector including a target crystal , which is adapted for creating phonons in response to an interaction of neutrinos to be detected with the target crystal , and a target temperature sensor , which is arranged for sensing a temperature change in response to an absorption of phonons created in the target crystal , and - an inner veto detector comprising at least one inner veto component with an inner veto temperature sensor , wherein the at least one inner veto component is adapted for supporting the at least one target detector and for an anticoincidence based discrimination of background interaction events by creating phonons in response to the background interaction events and sensing a temperature change in response to an absorption of the phonons with the inner veto temperature sensor , wherein - the neutrino detector device is configured for an operation at cryogenic temperatures, - a crystal volume of the target crystal and a size of the target temperature sensor of the at least one target detector are selected such that an over-ground sensitivity threshold of the at least one target detector is below 180 eV, and - the at least one inner veto component surrounds the at least one target detector , so that the at least one target detector is arranged within the inner veto detector , characterized in that - an outer veto detector is provided for accommodating the inner veto detector , wherein the outer veto detector comprises at least one outer veto component being adapted for creating phonons in response to an interaction with background radiation and having an outer veto temperature sensor , which is arranged for sensing a temperature change in response to an absorption of phonons created in the at least one outer veto component . <EOS>