A method of forming an engineered substrate assembly , the method comprising: forming a first semiconductor material at a front surface of a donor substrate by heteroepitaxial growth; transferring at least a portion (P 0 ) of the first semiconductor material to a first handle substrate , wherein the first handle substrate includes a first substrate material and a first bonding material encapsulating the first substrate material, wherein transferring the portion of the first semiconductor material includes bonding the first semiconductor material and the first bonding material , and separating the portion of the first semiconductor material from the donor substrate, and wherein the portion of the first semiconductor material forms a first formation structure at the first handle substrate; forming a second formation structure that includes the first formation structure and a second semiconductor material homoepitaxially grown on the first formation structure; and transferring a second portion (P 2 ) of the second formation structure to a second handle substrate such that a first portion (P 1 ) of the second formation structure remains at the first handle substrate , wherein the second handle substrate includes a second substrate material and a second bonding material encapsulating the second substrate material , and wherein transferring the second portion (P 2 ) of the second formation structure includes bonding the second formation structure and the second bonding material , and separating the first portion (P 1 ) of the second formation structure from the second portion (P 2 ) of the second formation structure . forming a first semiconductor material at a front surface of a donor substrate by heteroepitaxial growth; transferring at least a portion (P 0 ) of the first semiconductor material to a first handle substrate , wherein the first handle substrate includes a first substrate material and a first bonding material encapsulating the first substrate material, wherein transferring the portion of the first semiconductor material includes bonding the first semiconductor material and the first bonding material , and separating the portion of the first semiconductor material from the donor substrate, and wherein the portion of the first semiconductor material forms a first formation structure at the first handle substrate; forming a second formation structure that includes the first formation structure and a second semiconductor material homoepitaxially grown on the first formation structure; and transferring a second portion (P 2 ) of the second formation structure to a second handle substrate such that a first portion (P 1 ) of the second formation structure remains at the first handle substrate , wherein the second handle substrate includes a second substrate material and a second bonding material encapsulating the second substrate material , and wherein transferring the second portion (P 2 ) of the second formation structure includes bonding the second formation structure and the second bonding material , and separating the first portion (P 1 ) of the second formation structure from the second portion (P 2 ) of the second formation structure . <EOS>