Process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented In x Ga 1-x As material with 0 ≤ x ≤ 1, said contact comprising an Ni-InGaAs intermetallic compound, said intermetallic compound having a hexagonal crystallographic structure that may have: - a first texture, of which ( 10 1 0 ) planes of the intermetallic compound are parallel to the surface of said layer or of said substrate, and which is formed at a first nucleation temperature or - a second texture, of which the planes of the intermetallic compound are parallel to the planes of said layer or of said substrate, and which is formed at a second nucleation temperature above said first nucleation temperature; said process comprising the following steps: - the production of nomograms defining, for a thickness of Ni deposited on said In x Ga 1-x As material, the time required to completely consume the initial thickness of Ni deposited on said In x Ga 1-x As material as a function of the annealing temperature, said annealing temperature being below said nucleation temperature of said second texture; - the localized deposition of Ni on the surface of said In x Ga 1-x As material in order to form a layer of Ni having a contact thickness; - an annealing step applying the pair of parameters: time required/annealing temperature, deduced from said nomograms in correlation with said contact thickness so as to form, by solid-state reaction, a layer of intermetallic compound of first texture, said annealing step comprising: - a first temperature rise step with a first temperature rise rate that makes it possible to reach a final annealing temperature (T 1r ) and - a second temperature rise step with a second temperature rise rate that makes it possible to reach a final annealing temperature (T p ) from said first annealing temperature; - at least one hold of said final annealing temperature (T p ), for a hold time (Δt p ). - a first texture, of which ( 10 1 0 ) planes of the intermetallic compound are parallel to the surface of said layer or of said substrate, and which is formed at a first nucleation temperature or - a second texture, of which the planes of the intermetallic compound are parallel to the planes of said layer or of said substrate, and which is formed at a second nucleation temperature above said first nucleation temperature; - the production of nomograms defining, for a thickness of Ni deposited on said In x Ga 1-x As material, the time required to completely consume the initial thickness of Ni deposited on said In x Ga 1-x As material as a function of the annealing temperature, said annealing temperature being below said nucleation temperature of said second texture; - the localized deposition of Ni on the surface of said In x Ga 1-x As material in order to form a layer of Ni having a contact thickness; - an annealing step applying the pair of parameters: time required/annealing temperature, deduced from said nomograms in correlation with said contact thickness so as to form, by solid-state reaction, a layer of intermetallic compound of first texture, said annealing step comprising: - a first temperature rise step with a first temperature rise rate that makes it possible to reach a final annealing temperature (T 1r ) and - a second temperature rise step with a second temperature rise rate that makes it possible to reach a final annealing temperature (T p ) from said first annealing temperature; - at least one hold of said final annealing temperature (T p ), for a hold time (Δt p ). <EOS>