Bandpass transmission filter having a center wavelength λ 0 of transmission, comprising: A waveguide structure arranged on a substrate , a grating structure in the waveguide structure having a side face grating or a top face grating, the grating structure having changing grating pitch values Λ i for diffracting out a guided radiation in the waveguide structure having wavelengths λ 1 which are lower than the center wavelength λ 0 , and for reflecting back a guided radiation in the waveguide structure having a wavelength λ 2 which is higher than the center wavelength λ 0 , and a radiation absorbing structure , which is formed as a dielectric layer arranged adjacent to the waveguide structure , for absorbing a radiation guided by the waveguide structure having a wavelength λ 3 higher than the wavelength λ 2 , with λ 0 < λ 2 < λ 3 , wherein the radiation absorbing structure at least partially covers a bottom face of the waveguide structure with the grating structure , and wherein a further dielectric layer is formed between the waveguide structure and the substrate , wherein the dielectric layer and the further dielectric layer are arranged between the waveguide structure and the substrate , wherein the further dielectric layer is formed between the dielectric layer and the substrate , and wherein the further dielectric layer has a material thickness for suppressing a coupling of the waveguide mode from the waveguide structure into the substrate ; wherein the waveguide structure comprises a silicon, polysilicon, Si, Ge, AIN or As 2 Se 3 material, wherein the dielectric layer comprises a Si 3 N 4 material, and wherein the further dielectric layer comprises a SiO 2 material. A waveguide structure arranged on a substrate , a grating structure in the waveguide structure having a side face grating or a top face grating, the grating structure having changing grating pitch values Λ i for diffracting out a guided radiation in the waveguide structure having wavelengths λ 1 which are lower than the center wavelength λ 0 , and for reflecting back a guided radiation in the waveguide structure having a wavelength λ 2 which is higher than the center wavelength λ 0 , and a radiation absorbing structure , which is formed as a dielectric layer arranged adjacent to the waveguide structure , for absorbing a radiation guided by the waveguide structure having a wavelength λ 3 higher than the wavelength λ 2 , with λ 0 < λ 2 < λ 3 , wherein the radiation absorbing structure at least partially covers a bottom face of the waveguide structure with the grating structure , and wherein a further dielectric layer is formed between the waveguide structure and the substrate , wherein the dielectric layer and the further dielectric layer are arranged between the waveguide structure and the substrate , wherein the further dielectric layer is formed between the dielectric layer and the substrate , and wherein the further dielectric layer has a material thickness for suppressing a coupling of the waveguide mode from the waveguide structure into the substrate ; wherein the waveguide structure comprises a silicon, polysilicon, Si, Ge, AIN or As 2 Se 3 material, wherein the dielectric layer comprises a Si 3 N 4 material, and wherein the further dielectric layer comprises a SiO 2 material. <EOS>