An image sensor for time delay and integration, TDI, imaging, said image sensor comprising: an array of photo-sensitive elements comprising a plurality of photo-sensitive elements arranged in rows and columns of the array , wherein each photo-sensitive element comprises: an active layer configured to generate charges in response to incident light on the active layer ; a charge transport layer formed of a semiconductor, wherein the charge transport layer comprises a first portion and a second portion , wherein the second portion is laterally displaced in a direction along a column of the array in relation to the first portion ; and at least a first and a second gate (114a; 114c), each separated by a dielectric material from the charge transport layer , wherein the charge transport layer is arranged between the active layer and the first and the second gate (114a; 114c), wherein the first gate is configured to control a potential of the first portion of the charge transport layer and the second gate is configured to control a potential of the second portion of the charge transport layer and wherein the first and the second gates (114a; 114c) are configured for controlling movement of charges from the first portion of the charge transport layer to the second portion of the charge transport layer ; wherein the array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element adjacent to the first photo-sensitive element (11 0a) in a direction along a column of the array are configured to control transfer of charges from the second portion of the charge transport layer of the first photo-sensitive element to the first portion of the charge transport layer of the second photo-sensitive element . an active layer configured to generate charges in response to incident light on the active layer ; a charge transport layer formed of a semiconductor, wherein the charge transport layer comprises a first portion and a second portion , wherein the second portion is laterally displaced in a direction along a column of the array in relation to the first portion ; and at least a first and a second gate (114a; 114c), each separated by a dielectric material from the charge transport layer , wherein the charge transport layer is arranged between the active layer and the first and the second gate (114a; 114c), wherein the first gate is configured to control a potential of the first portion of the charge transport layer and the second gate is configured to control a potential of the second portion of the charge transport layer and wherein the first and the second gates (114a; 114c) are configured for controlling movement of charges from the first portion of the charge transport layer to the second portion of the charge transport layer ; wherein the array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element adjacent to the first photo-sensitive element (11 0a) in a direction along a column of the array are configured to control transfer of charges from the second portion of the charge transport layer of the first photo-sensitive element to the first portion of the charge transport layer of the second photo-sensitive element . <EOS>