An organic light emitting display device comprising: a substrate ; a transistor on the substrate and including an active layer , a gate electrode , a source electrode , and a drain electrode ; a light blocking layer disposed over the substrate and below the active layer of the transistor; an interlayer insulating layer formed on the substrate including a region on which the gate electrode of the transistor is formed, and including regions provided between the gate electrode and the source electrode and the drain electrode ; a color filter (CF) on the interlayer insulating layer ; a first electrode on the color filter (CF), wherein the first electrode at least partially laterally overlaps the color filter (CF) and extends toward the transistor so as to be electrically connected to the drain electrode , thereby forming an extended portion of the first electrode ; a barrier layer surrounding the edges of the first electrode to define a light emitting region; and an organic light emitting layer and a second electrode formed on the first electrode and on the barrier layer , wherein at least a portion of the extended portion of the first electrode is positioned between the drain electrode and the interlayer insulating layer , wherein the drain electrode comprises a first portion electrically connected to the active layer through a first contact hole formed in the interlayer insulating layer and exposing the active layer , and a second portion formed on the first electrode and connected to an upper surface of the first electrode , and wherein the second portion is electrically connected to the light blocking layer through a second contact hole formed in the interlayer insulating layer and exposing the light blocking layer . a substrate ; a transistor on the substrate and including an active layer , a gate electrode , a source electrode , and a drain electrode ; a light blocking layer disposed over the substrate and below the active layer of the transistor; an interlayer insulating layer formed on the substrate including a region on which the gate electrode of the transistor is formed, and including regions provided between the gate electrode and the source electrode and the drain electrode ; a color filter (CF) on the interlayer insulating layer ; a first electrode on the color filter (CF), wherein the first electrode at least partially laterally overlaps the color filter (CF) and extends toward the transistor so as to be electrically connected to the drain electrode , thereby forming an extended portion of the first electrode ; a barrier layer surrounding the edges of the first electrode to define a light emitting region; and an organic light emitting layer and a second electrode formed on the first electrode and on the barrier layer , wherein at least a portion of the extended portion of the first electrode is positioned between the drain electrode and the interlayer insulating layer , wherein the drain electrode comprises a first portion electrically connected to the active layer through a first contact hole formed in the interlayer insulating layer and exposing the active layer , and a second portion formed on the first electrode and connected to an upper surface of the first electrode , and wherein the second portion is electrically connected to the light blocking layer through a second contact hole formed in the interlayer insulating layer and exposing the light blocking layer . <EOS>