A method for controlling a commutation process of a load current from a first switching module (SM1) to a second switching module (SM2), wherein both the first and second switching modules (SM1, SM2) each comprise a MOSFET (Q1, Q2) which is controllable by a gate-source voltage (U GS ), and an intrinsic inverse diode (D1, D2), the method comprising the consecutive steps of: applying a first control voltage to the first switching module (SM1) to switch it off for a first time period (t 1 ), wherein the level (U 1 , U 1 ') of the first control voltage is below a predetermined threshold voltage (U TH ), above which the MOSFET (Q1) of the first switching module (SM1) becomes minimally conductive, and wherein the first time period (t 1 ) is selected so that the inverse diode (D1) of the first switching module (SM1) takes over the load current; applying, upon expiry of the first time period (t 1 ), a second control voltage to the first switching module (SM1) for a second time period (t 2 ) to influence the switch-off behavior of the inverse diode (D1) of the first switching module (SM1), wherein the second control voltage has an intermediate level (U 2 , U 2 ') which is between the level (U 1 , U 1 ') of the first control voltage and that of the threshold voltage (U TH ), applying, within the second time period (t 2 ), a third control voltage to the second switching module (SM2) to switch it on, wherein the level (U 3 , U 3 ') of the third control voltage is above a predetermined threshold voltage (U TH ), above which the MOSFET (Q2) of the second switching module (SM2) becomes minimally conductive, in order to cause a commutation of the load current from the inverse diode (D1) of the first switching module (SM1) to the MOSFET (Q2) of the second switching module (SM2); and applying, upon expiry of the second time period (t 2 ), a fourth control voltage having a level (U 4 , U 4 ') that is below the intermediate level (U 2 , U 2 ') of the second control voltage to the MOSFET of the first switching module (SM1) to block it or hold it in a blocked state. applying a first control voltage to the first switching module (SM1) to switch it off for a first time period (t 1 ), wherein the level (U 1 , U 1 ') of the first control voltage is below a predetermined threshold voltage (U TH ), above which the MOSFET (Q1) of the first switching module (SM1) becomes minimally conductive, and wherein the first time period (t 1 ) is selected so that the inverse diode (D1) of the first switching module (SM1) takes over the load current; applying, upon expiry of the first time period (t 1 ), a second control voltage to the first switching module (SM1) for a second time period (t 2 ) to influence the switch-off behavior of the inverse diode (D1) of the first switching module (SM1), wherein the second control voltage has an intermediate level (U 2 , U 2 ') which is between the level (U 1 , U 1 ') of the first control voltage and that of the threshold voltage (U TH ), applying, within the second time period (t 2 ), a third control voltage to the second switching module (SM2) to switch it on, wherein the level (U 3 , U 3 ') of the third control voltage is above a predetermined threshold voltage (U TH ), above which the MOSFET (Q2) of the second switching module (SM2) becomes minimally conductive, in order to cause a commutation of the load current from the inverse diode (D1) of the first switching module (SM1) to the MOSFET (Q2) of the second switching module (SM2); and applying, upon expiry of the second time period (t 2 ), a fourth control voltage having a level (U 4 , U 4 ') that is below the intermediate level (U 2 , U 2 ') of the second control voltage to the MOSFET of the first switching module (SM1) to block it or hold it in a blocked state. <EOS>