Method for manufacturing a microfluidic device , comprising the following steps: - providing a first substrate having a first surface and a second surface lying opposite the first surface ; - producing an etching mask on the first surface , wherein the etching mask has an opening ; - producing, by means of etching, a recess in the first surface in the region of the opening ; - depositing an electrically conductive material onto the etching mask and/or a layer covering the etching mask and onto a region of a bottom of the recess below the opening , characterized in that the method comprises the following steps before the depositing of the electrically conductive material : - applying a photoresist to the etching mask and to a region of a bottom of the recess below the opening ; - removing the photoresist from the recess , wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening ; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess , wherein the exposure takes place through the second surface ; o the first substrate is transparent to light (L) suitable for an exposure of the photoresist ; and o the etching mask is not transparent to light (L) that is suitable for the exposure of the photoresist . - providing a first substrate having a first surface and a second surface lying opposite the first surface ; - producing an etching mask on the first surface , wherein the etching mask has an opening ; - producing, by means of etching, a recess in the first surface in the region of the opening ; - depositing an electrically conductive material onto the etching mask and/or a layer covering the etching mask and onto a region of a bottom of the recess below the opening , characterized in that the method comprises the following steps before the depositing of the electrically conductive material : - applying a photoresist to the etching mask and to a region of a bottom of the recess below the opening ; - removing the photoresist from the recess , wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening ; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess , wherein the exposure takes place through the second surface ; o the first substrate is transparent to light (L) suitable for an exposure of the photoresist ; and o the etching mask is not transparent to light (L) that is suitable for the exposure of the photoresist . - applying a photoresist to the etching mask and to a region of a bottom of the recess below the opening ; - removing the photoresist from the recess , wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening ; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess , wherein the exposure takes place through the second surface ; o the first substrate is transparent to light (L) suitable for an exposure of the photoresist ; and o the etching mask is not transparent to light (L) that is suitable for the exposure of the photoresist . o the removal of the photoresist from the recess comprises exposing the photoresist in the recess , wherein the exposure takes place through the second surface ; o the first substrate is transparent to light (L) suitable for an exposure of the photoresist ; and o the etching mask is not transparent to light (L) that is suitable for the exposure of the photoresist . <EOS>