An organic light emitting diode, comprising: a light emitting layer ; a first electron transport layer comprising a first electron transport material on the light emitting layer ; a hole scavenger layer comprising a hole scavenger material on a side of the first electron transport layer distal to the light emitting layer ; and a second electron transport layer comprising a second electron transport material on a side of the hole scavenger layer distal to the first electron transport layer ; wherein the hole scavenger material comprises a first light emitting material capable of converting excitons generated by excess holes in the first electron transport layer or second electron transport layer to a ground state through radiative decay; wherein the hole scavenger material comprises a host material and a light emitting guest material; characterized in that the first electron transport material and the second electron transport material are two different electron transport materials having different lowest unoccupied molecular orbital, LUMO, energy levels, the LUMO energy level of the host material is between those of the first electron transport material and the second electron transport material; the organic light emitting diode further comprises an electron injection layer comprising an electron injection material on a side of the second electron transport layer distal to the hole scavenger layer ; wherein the light emitting layer comprises a second light emitting material; and the host material has a LUMO energy level between those of the second light emitting material and the electron injection material. a light emitting layer ; a first electron transport layer comprising a first electron transport material on the light emitting layer ; a hole scavenger layer comprising a hole scavenger material on a side of the first electron transport layer distal to the light emitting layer ; and a second electron transport layer comprising a second electron transport material on a side of the hole scavenger layer distal to the first electron transport layer ; wherein the hole scavenger material comprises a first light emitting material capable of converting excitons generated by excess holes in the first electron transport layer or second electron transport layer to a ground state through radiative decay; wherein the hole scavenger material comprises a host material and a light emitting guest material; characterized in that the first electron transport material and the second electron transport material are two different electron transport materials having different lowest unoccupied molecular orbital, LUMO, energy levels, the LUMO energy level of the host material is between those of the first electron transport material and the second electron transport material; the organic light emitting diode further comprises an electron injection layer comprising an electron injection material on a side of the second electron transport layer distal to the hole scavenger layer ; wherein the light emitting layer comprises a second light emitting material; and the host material has a LUMO energy level between those of the second light emitting material and the electron injection material. <EOS>