An electrostatic chuck which is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and which comprises alumina; magnesium oxide (MgO) as a sintering aid; and a rare earth composite oxide comprising three to five different rare earth metals, and the content of the alumina is 90 wt.% to 99 wt.% based on the total weight of the sintered body, and the content of the rare earth composite oxide is more than 0 wt.% and 1 wt.% or less based on the total weight of the sintered body, and has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E + 16 Ω·cm to 1.0E + 17 Ω·cm, and the rare earth composite oxide is selected from the group consisting of a composite oxide comprising three different rare-earth metals selected from the group consisting of samarium-cerium-europium composite oxide (SmCeEuOx), gadolinium-cerium-lanthanum composite oxide (GdCeLaOx), and europium-gadolinium-samarium composite oxide (EuGdSmOx); a composite oxide comprising four different rare-earth metals, which is samarium-cerium-gadolinium-europium composite oxide (SmCeGdEuOx) or gadolinium-samarium-europium-lanthanum composite oxide (GdSmEuLaOx); and a composite oxide comprising five different rare-earth metals, which is samarium-cerium-europium-gadolinium-lanthanum composite oxide (SmCeEuGdLaOx), and the rare earth composite oxide comprises three rare-earth metal oxides in a weight ratio of 1 to 3.5:0.5 to 2.5:1, four rare-earth metal oxides in a weight ratio of 1.5 to 3.5:0.5 to 2.5:1 to 2.5:1, or five rare-earth metal oxides in a weight ratio of 1 to 3: 0.5 to 1.5:0.5 to 1.5:1 to 2:1. and which comprises alumina; magnesium oxide (MgO) as a sintering aid; and a rare earth composite oxide comprising three to five different rare earth metals, and the content of the alumina is 90 wt.% to 99 wt.% based on the total weight of the sintered body, and the content of the rare earth composite oxide is more than 0 wt.% and 1 wt.% or less based on the total weight of the sintered body, and has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E + 16 Ω·cm to 1.0E + 17 Ω·cm, and the rare earth composite oxide is selected from the group consisting of a composite oxide comprising three different rare-earth metals selected from the group consisting of samarium-cerium-europium composite oxide (SmCeEuOx), gadolinium-cerium-lanthanum composite oxide (GdCeLaOx), and europium-gadolinium-samarium composite oxide (EuGdSmOx); a composite oxide comprising four different rare-earth metals, which is samarium-cerium-gadolinium-europium composite oxide (SmCeGdEuOx) or gadolinium-samarium-europium-lanthanum composite oxide (GdSmEuLaOx); and a composite oxide comprising five different rare-earth metals, which is samarium-cerium-europium-gadolinium-lanthanum composite oxide (SmCeEuGdLaOx), and the rare earth composite oxide comprises three rare-earth metal oxides in a weight ratio of 1 to 3.5:0.5 to 2.5:1, four rare-earth metal oxides in a weight ratio of 1.5 to 3.5:0.5 to 2.5:1 to 2.5:1, or five rare-earth metal oxides in a weight ratio of 1 to 3: 0.5 to 1.5:0.5 to 1.5:1 to 2:1. <EOS>