A manufacturing method of a transistor on color filter type organic light emitting diode display, comprising the steps of: Step S1, providing a substrate , and performing clean and pre-cure to the substrate ; Step S2, depositing a black light shielding thin film and patterning the black light shielding thin film to form a black matrix ; Step S3, sequentially depositing color filters of various colors in the black matrix to form a color filter layer ; Step S4, depositing a planarization layer on the color filter layer ; Step S5, depositing a first metal layer on the planarization layer and patterning the first metal layer to form a gate ; Step S6, depositing a gate insulation layer covering the gate and the planarization layer ; Step S7, preparing a zinc oxide solution mixed with lithium and coating the zinc oxide solution mixed with lithium on the gate insulation layer by spin coating to form a zinc oxide coating layer mixed with lithium, then annealing the zinc oxide coating layer mixed with lithium at a temperature of at least 200 °C and patterning the zinc oxide coating layer mixed with lithium to form a channel layer ; Step S8, depositing an etching stopper layer and patterning the etching stopper layer to form a first through hole and a second through hole which respectively expose two sides of the channel layer ; Step S9, depositing a second metal layer on the etching stopper layer and patterning the second metal layer to form a source and a drain ; wherein the source and the drain respectively contact the two sides of the channel layer via the first through hole and the second through hole ; Step S10, sequentially preparing a protective layer , an anode , a pixel definition layer , an organic light emitting diode layer and a cathode on the etching stopper layer , the source , and the drain ; wherein for Steps S5 to S9 the temperature is less than 230 °C. Step S1, providing a substrate , and performing clean and pre-cure to the substrate ; Step S2, depositing a black light shielding thin film and patterning the black light shielding thin film to form a black matrix ; Step S3, sequentially depositing color filters of various colors in the black matrix to form a color filter layer ; Step S4, depositing a planarization layer on the color filter layer ; Step S5, depositing a first metal layer on the planarization layer and patterning the first metal layer to form a gate ; Step S6, depositing a gate insulation layer covering the gate and the planarization layer ; Step S7, preparing a zinc oxide solution mixed with lithium and coating the zinc oxide solution mixed with lithium on the gate insulation layer by spin coating to form a zinc oxide coating layer mixed with lithium, then annealing the zinc oxide coating layer mixed with lithium at a temperature of at least 200 °C and patterning the zinc oxide coating layer mixed with lithium to form a channel layer ; Step S8, depositing an etching stopper layer and patterning the etching stopper layer to form a first through hole and a second through hole which respectively expose two sides of the channel layer ; Step S9, depositing a second metal layer on the etching stopper layer and patterning the second metal layer to form a source and a drain ; wherein the source and the drain respectively contact the two sides of the channel layer via the first through hole and the second through hole ; Step S10, sequentially preparing a protective layer , an anode , a pixel definition layer , an organic light emitting diode layer and a cathode on the etching stopper layer , the source , and the drain ; wherein for Steps S5 to S9 the temperature is less than 230 °C. <EOS>