A semiconductor device comprising: a first region of semiconductor material having a first conductivity type and a first dopant concentration; a base well region of semiconductor material within the first region , the base well region having the first conductivity type and a second dopant concentration greater than the first dopant concentration of the first region ; a base contact region of semiconductor material within the base well region , the base contact region having the first conductivity type and a third dopant concentration greater than the second dopant concentration; an emitter region of semiconductor material within the base well region , the emitter region having a second conductivity type opposite the first conductivity type; and a collector region of semiconductor material having the second conductivity type; and an isolation region of dielectric material laterally between and contacting each of the emitter region and the collector region , wherein: the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region ; a depth of the collector region is greater than a depth of the emitter region ; the depth of the collector region is greater than a depth of the base well region ; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region . a first region of semiconductor material having a first conductivity type and a first dopant concentration; a base well region of semiconductor material within the first region , the base well region having the first conductivity type and a second dopant concentration greater than the first dopant concentration of the first region ; a base contact region of semiconductor material within the base well region , the base contact region having the first conductivity type and a third dopant concentration greater than the second dopant concentration; an emitter region of semiconductor material within the base well region , the emitter region having a second conductivity type opposite the first conductivity type; and a collector region of semiconductor material having the second conductivity type; and an isolation region of dielectric material laterally between and contacting each of the emitter region and the collector region , wherein: the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region ; a depth of the collector region is greater than a depth of the emitter region ; the depth of the collector region is greater than a depth of the base well region ; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region . the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region ; a depth of the collector region is greater than a depth of the emitter region ; the depth of the collector region is greater than a depth of the base well region ; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region . <EOS>