An air pulse generating element , comprising a membrane , a chamber , in which the membrane is disposed, a first faceplate , a second faceplate , a plurality of valves (201-204, 601-604), disposed by the membrane, configured to seal a plurality of openings (211-214, 611-614) of the chamber , in response to a plurality of valve control signals, wherein the membrane and the plurality of valves (201-204, 601-604) are all disposed at a first layer, the air pulse generating element being characterized in that the plurality of valves (201-204, 601-604) comprises: a first valve , configured to seal a first opening of the chamber in response to a first valve control signal (G), wherein the first opening is formed on the first faceplate , and the first faceplate is disposed at a second layer (Layer 1); a second valve , configured to seal a second opening of the chamber in response to a second valve control signal (H), wherein the second opening is formed on the second faceplate , and the second faceplate is disposed at a third layer (Layer 5); a third valve , configured to seal a third opening of the chamber in response to a third valve control signal (H), wherein the third opening is formed on the first faceplate ; and a fourth valve , configured to seal a fourth opening of the chamber in response to a fourth valve control signal (G), wherein the fourth opening is formed on the second faceplate , wherein the first valve , the second valve , the third valve and the fourth valve are coplanar with the membrane . a first faceplate , a second faceplate , a plurality of valves (201-204, 601-604), disposed by the membrane, configured to seal a plurality of openings (211-214, 611-614) of the chamber , in response to a plurality of valve control signals, wherein the membrane and the plurality of valves (201-204, 601-604) are all disposed at a first layer, the air pulse generating element being characterized in that the plurality of valves (201-204, 601-604) comprises: a first valve , configured to seal a first opening of the chamber in response to a first valve control signal (G), wherein the first opening is formed on the first faceplate , and the first faceplate is disposed at a second layer (Layer 1); a second valve , configured to seal a second opening of the chamber in response to a second valve control signal (H), wherein the second opening is formed on the second faceplate , and the second faceplate is disposed at a third layer (Layer 5); a third valve , configured to seal a third opening of the chamber in response to a third valve control signal (H), wherein the third opening is formed on the first faceplate ; and a fourth valve , configured to seal a fourth opening of the chamber in response to a fourth valve control signal (G), wherein the fourth opening is formed on the second faceplate , a first valve , configured to seal a first opening of the chamber in response to a first valve control signal (G), wherein the first opening is formed on the first faceplate , and the first faceplate is disposed at a second layer (Layer 1); a second valve , configured to seal a second opening of the chamber in response to a second valve control signal (H), wherein the second opening is formed on the second faceplate , and the second faceplate is disposed at a third layer (Layer 5); a third valve , configured to seal a third opening of the chamber in response to a third valve control signal (H), wherein the third opening is formed on the first faceplate ; and a fourth valve , configured to seal a fourth opening of the chamber in response to a fourth valve control signal (G), wherein the fourth opening is formed on the second faceplate , wherein the first valve , the second valve , the third valve and the fourth valve are coplanar with the membrane . <EOS>