A method for producing a ferroelectric thin film made of PZT, comprising: coating a first composition for forming a crystal diameter controlling layer which contains a Pb compound and a Ti compound on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the direction; performing preliminary firing the coated first composition to form a crystal diameter controlling layer which is made of lead titanate and of which the thickness is 1nm to 10nm; coating a second composition for forming a ferroelectric thin film containing a Pb compound, a Zr compound, and a Ti compound on the crystal diameter controlling layer ; performing calcination of the coated second composition, and subsequently performing firing of the coated second composition to crystallize the coated second composition to form an orientation controlling layer made of PZT, and thereby forming a ferroelectric thin film made of PZT on the base electrode ; and after forming the orientation controlling layer on the crystal diameter controlling layer , forming a thickness adjusting layer having preferential crystal orientation that is same as the preferential crystal orientation of the orientation controlling layer by coating the second composition for forming a ferroelectric thin film on the orientation controlling layer , performing calcination of the coated second composition, and performing firing of the coated second composition, where an amount of the second composition for forming a ferroelectric thin film coated on the crystal diameter controlling layer is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 45 nm to 150 nm, and thereby controlling the preferred orientation of crystals of the orientation controlling layer in the plane. coating a first composition for forming a crystal diameter controlling layer which contains a Pb compound and a Ti compound on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the direction; performing preliminary firing the coated first composition to form a crystal diameter controlling layer which is made of lead titanate and of which the thickness is 1nm to 10nm; coating a second composition for forming a ferroelectric thin film containing a Pb compound, a Zr compound, and a Ti compound on the crystal diameter controlling layer ; performing calcination of the coated second composition, and subsequently performing firing of the coated second composition to crystallize the coated second composition to form an orientation controlling layer made of PZT, and thereby forming a ferroelectric thin film made of PZT on the base electrode ; and after forming the orientation controlling layer on the crystal diameter controlling layer , forming a thickness adjusting layer having preferential crystal orientation that is same as the preferential crystal orientation of the orientation controlling layer by coating the second composition for forming a ferroelectric thin film on the orientation controlling layer , performing calcination of the coated second composition, and performing firing of the coated second composition, where an amount of the second composition for forming a ferroelectric thin film coated on the crystal diameter controlling layer is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 45 nm to 150 nm, and thereby controlling the preferred orientation of crystals of the orientation controlling layer in the plane. <EOS>