A light emitting diode chip , comprising: a transparent substrate comprising a first surface and a second surface; a light emitting structure arranged on the first surface, the light emitting structure comprising an active layer arranged between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer; and a distributed Bragg reflector , wherein the second surface is arranged on the distributed Bragg reflector , the distributed Bragg reflector being configured to reflect light emitted from the light emitting structure , and wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, wherein the distributed Bragg reflector comprises: a plurality of pairs of first material layers having a first optical thickness and second material layers having a second optical thickness; and a plurality of pairs of third material layers having a third optical thickness and fourth material layers having a fourth optical thickness, wherein the refractive index of the first material layer is different from the refractive index of the second material layer , and the refractive index of the third material layer is different from the refractive index of the fourth material layer , and wherein the first optical thickness is thicker than the third optical thickness, and the second optical thickness is thicker than the fourth optical thickness, characterized in that the second surface has a surface roughness having a root-mean-square (RMS) value of 3 nm or less; in that a reflective metal layer is arranged under the distributed Bragg reflector ; and in that at least one pair of the third material layer and the fourth material layer is positioned between the plurality of pairs of the first material layer and the second material layer . a transparent substrate comprising a first surface and a second surface; a light emitting structure arranged on the first surface, the light emitting structure comprising an active layer arranged between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer; and a distributed Bragg reflector , wherein the second surface is arranged on the distributed Bragg reflector , the distributed Bragg reflector being configured to reflect light emitted from the light emitting structure , and wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, wherein the distributed Bragg reflector comprises: a plurality of pairs of first material layers having a first optical thickness and second material layers having a second optical thickness; and a plurality of pairs of third material layers having a third optical thickness and fourth material layers having a fourth optical thickness, wherein the refractive index of the first material layer is different from the refractive index of the second material layer , and the refractive index of the third material layer is different from the refractive index of the fourth material layer , and wherein the first optical thickness is thicker than the third optical thickness, and the second optical thickness is thicker than the fourth optical thickness, characterized in that the second surface has a surface roughness having a root-mean-square (RMS) value of 3 nm or less; in that a reflective metal layer is arranged under the distributed Bragg reflector ; and in that at least one pair of the third material layer and the fourth material layer is positioned between the plurality of pairs of the first material layer and the second material layer . <EOS>