A semiconductor device comprising: a substrate ; a plurality of light-emitting semiconductor structures disposed at a center portion(C1) of the substrate , each light-emitting semiconductor structure consisting of a semiconductor structure made of a first conductivity type semiconductor layer , a second conductivity type semiconductor layer , and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer ; a first pad and a second pad disposed on an edge part(P1) of the substrate ; a first wiring line electrically connecting the first pad to at least one of the plurality of light-emitting semiconductor structures ; a second wiring line electrically connecting the second pad to at least one of the plurality of light-emitting semiconductor structures ; and a wavelength conversion layer disposed on the plurality of light-emitting semiconductor structures , wherein the plurality of light-emitting semiconductor structures are disposed to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, a separation distance(d1) between the plurality of light-emitting semiconductor structures is in a range of 5 μm to 40 μm, and wherein a thickness (d4) of each of the plurality of light-emitting semiconductor structures is in a range of 1 μm to 30 μm, wherein a thickness(d2) of the wavelength conversion layer disposed on upper surfaces of the semiconductor structures is in a range of 10 μm to 30 μm, and the wavelength conversion layer includes fluorescent particles, wherein an average diameter (D50) of the fluorescent particles is in a range of 1 μm to 20 μm. a substrate ; a plurality of light-emitting semiconductor structures disposed at a center portion(C1) of the substrate , each light-emitting semiconductor structure consisting of a semiconductor structure made of a first conductivity type semiconductor layer , a second conductivity type semiconductor layer , and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer ; a first pad and a second pad disposed on an edge part(P1) of the substrate ; a first wiring line electrically connecting the first pad to at least one of the plurality of light-emitting semiconductor structures ; a second wiring line electrically connecting the second pad to at least one of the plurality of light-emitting semiconductor structures ; and a wavelength conversion layer disposed on the plurality of light-emitting semiconductor structures , wherein the plurality of light-emitting semiconductor structures are disposed to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, a separation distance(d1) between the plurality of light-emitting semiconductor structures is in a range of 5 μm to 40 μm, and wherein a thickness (d4) of each of the plurality of light-emitting semiconductor structures is in a range of 1 μm to 30 μm, wherein a thickness(d2) of the wavelength conversion layer disposed on upper surfaces of the semiconductor structures is in a range of 10 μm to 30 μm, and the wavelength conversion layer includes fluorescent particles, wherein an average diameter (D50) of the fluorescent particles is in a range of 1 μm to 20 μm. <EOS>