A light emitting device, comprising: at least one first light emitting diode (LED) chip (132; 1205A; 1505A) to emit a first light (L1) having a peak wavelength in a range of 410 nm to 430 nm; at least one second LED chip (134; 1205B; 1505B) to emit a second light (L2) having a peak wavelength in a range of 440 nm to 460 nm; a first quantum dot (154; QD1) on a path of light emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B), the first quantum dot (154; QD1) to convert a first portion of the first and second light (L1+L2) emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B) into light having a peak wavelength in a range of 510 nm to 550 nm; and a second quantum dot (156; QD2) on a path of light emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B), the second quantum dot (156; QD2) to convert a second portion of the first and second light (L1+L2) emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B) into light having a peak wavelength in a range of 610 nm to 660 nm, wherein, in an emission spectrum of final light (L3), an intensity (S1') of the final light at a peak wavelength of the at least one first LED chip (132; 1205A; 1505A), is equal to 15% or less of an intensity (S2') of the final light at a peak wavelength of the at least one second LED chip (134; 1205B; 1505B) setting a relative intensity condition of a short wavelength in the spectrum of the final light (L3), and wherein the light intensity of the first light (L1) and of the second light (L2) before transmission through a wavelength conversion film including the first quantum dot (154, QD1) and the second quantum dot (156, QD2) is adjusted to obtain the relative intensity condition of the short wavelength in the spectrum of the final light (L3) by lowering intensity (S1) of light from the first LED chip (132; 1205A; 1505A) relative to intensity (S2) of light from the second LED chip (134; 1205B; 1505B) after transmission through the wavelength conversion film . at least one first light emitting diode (LED) chip (132; 1205A; 1505A) to emit a first light (L1) having a peak wavelength in a range of 410 nm to 430 nm; at least one second LED chip (134; 1205B; 1505B) to emit a second light (L2) having a peak wavelength in a range of 440 nm to 460 nm; a first quantum dot (154; QD1) on a path of light emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B), the first quantum dot (154; QD1) to convert a first portion of the first and second light (L1+L2) emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B) into light having a peak wavelength in a range of 510 nm to 550 nm; and a second quantum dot (156; QD2) on a path of light emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B), the second quantum dot (156; QD2) to convert a second portion of the first and second light (L1+L2) emitted by the at least one first LED chip (132; 1205A; 1505A) and the at least one second LED chip (134; 1205B; 1505B) into light having a peak wavelength in a range of 610 nm to 660 nm, wherein, in an emission spectrum of final light (L3), an intensity (S1') of the final light at a peak wavelength of the at least one first LED chip (132; 1205A; 1505A), is equal to 15% or less of an intensity (S2') of the final light at a peak wavelength of the at least one second LED chip (134; 1205B; 1505B) setting a relative intensity condition of a short wavelength in the spectrum of the final light (L3), and <EOS>