A semiconductor package structure , comprising: a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises: an inter-metal dielectric (IMD) layer ; a first conductive layer disposed at a first layer-level of the IMD layer , wherein the first conductive layer has an antenna pattern ; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer , wherein the second conductive layer has a ground shielding pattern ; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer ; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure , wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer ; a molding compound covering the first surface of the RDL structure ; a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure ; and a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure . a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises: an inter-metal dielectric (IMD) layer ; a first conductive layer disposed at a first layer-level of the IMD layer , wherein the first conductive layer has an antenna pattern ; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer , wherein the second conductive layer has a ground shielding pattern ; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer ; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure , wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer ; an inter-metal dielectric (IMD) layer ; a first conductive layer disposed at a first layer-level of the IMD layer , wherein the first conductive layer has an antenna pattern ; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer , wherein the second conductive layer has a ground shielding pattern ; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer ; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure , wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer ; a molding compound covering the first surface of the RDL structure ; a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure ; and a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure . <EOS>