A method for manufacturing a semiconductor structure, comprising: providing a base ; forming a Through Silicon Via, TSV , in the base , with a depth of the TSV being less than a thickness of the base ; and forming a liner layer on a sidewall and a bottom of the TSV , and forming a conductive layer in the TSV , wherein the liner layer comprises a polish-stop layer, wherein the forming a liner layer on the sidewall and the bottom of the TSV , and forming the conductive layer in the TSV comprises: forming a first polish-stop layer on an upper surface of the base and the sidewall and the bottom of the TSV ; forming a first dielectric filler layer on a surface of the first polish-stop layer ; forming a second polish-stop layer on a surface of the first dielectric filler layer ; forming a second dielectric filler layer on a surface of the second polish-stop layer ; forming the conductive layer on a surface of the second dielectric filler layer , with the conductive layer covering an upper surface of the second dielectric filler layer and entirely filling the TSV ; and removing the conductive layer located above the base , the second dielectric filler layer located above the base , the second polish-stop layer located above the base , and the first dielectric filler layer located above the base , wherein each of the first polish-stop layer and the second polish-stop layer comprises a silicon nitride layer or a silicon carbon nitride layer. providing a base ; forming a Through Silicon Via, TSV , in the base , with a depth of the TSV being less than a thickness of the base ; and forming a liner layer on a sidewall and a bottom of the TSV , and forming a conductive layer in the TSV , wherein the liner layer comprises a polish-stop layer, wherein the forming a liner layer on the sidewall and the bottom of the TSV , and forming the conductive layer in the TSV comprises: forming a first polish-stop layer on an upper surface of the base and the sidewall and the bottom of the TSV ; forming a first dielectric filler layer on a surface of the first polish-stop layer ; forming a second polish-stop layer on a surface of the first dielectric filler layer ; forming a second dielectric filler layer on a surface of the second polish-stop layer ; forming the conductive layer on a surface of the second dielectric filler layer , with the conductive layer covering an upper surface of the second dielectric filler layer and entirely filling the TSV ; and removing the conductive layer located above the base , the second dielectric filler layer located above the base , the second polish-stop layer located above the base , and the first dielectric filler layer located above the base , wherein each of the first polish-stop layer and the second polish-stop layer comprises a silicon nitride layer or a silicon carbon nitride layer. forming a first polish-stop layer on an upper surface of the base and the sidewall and the bottom of the TSV ; forming a first dielectric filler layer on a surface of the first polish-stop layer ; forming a second polish-stop layer on a surface of the first dielectric filler layer ; forming a second dielectric filler layer on a surface of the second polish-stop layer ; forming the conductive layer on a surface of the second dielectric filler layer , with the conductive layer covering an upper surface of the second dielectric filler layer and entirely filling the TSV ; and removing the conductive layer located above the base , the second dielectric filler layer located above the base , the second polish-stop layer located above the base , and the first dielectric filler layer located above the base , wherein each of the first polish-stop layer and the second polish-stop layer comprises a silicon nitride layer or a silicon carbon nitride layer. <EOS>