A solid-state imaging apparatus comprising: a laminate of a first structure in which a pixel array unit in which pixels that perform photoelectric conversion are two-dimensionally arranged is formed, and a second structure in which an input circuit unit configured to allow a predetermined signal to be input from an outside of the solid-state imaging apparatus , an output circuit unit configured to output pixel signals output from the pixels to the outside of the solid-state imaging apparatus , and a signal processing circuit are formed, the second structure being located below the first structure , and wherein an output unit and an input unit are disposed below the pixel array unit of the first structure , the output unit including the output circuit unit , a first through hole via which is connected to the output circuit unit and which penetrates through a semiconductor substrate constituting part of the second structure , and an external terminal for signal output which connects the output circuit unit to the outside of the apparatus via the first through hole via , the input unit including the input circuit unit , a second through hole via which is connected to the input circuit unit and which penetrates through the semiconductor substrate, and an external terminal for signal input which connects the input circuit unit to the outside of the apparatus via the second through hole via , characterized in that the solid-state imaging apparatus is a cavity less structure, the laminate further comprises a glass substrate located above the first structure , and in that the solid-state imaging apparatus further comprises an on-chip lens above a photodiode of each pixel, wherein the on-chip lens is formed between the first structure and the glass substrate , and a cavity less glass seal resin disposed between the on-chip lens and the glass substrate , wherein the hardness of the glass seal resin is lower than the hardness of the glass substrate . a laminate of a first structure in which a pixel array unit in which pixels that perform photoelectric conversion are two-dimensionally arranged is formed, and a second structure in which an input circuit unit configured to allow a predetermined signal to be input from an outside of the solid-state imaging apparatus , an output circuit unit configured to output pixel signals output from the pixels to the outside of the solid-state imaging apparatus , and a signal processing circuit are formed, the second structure being located below the first structure , and wherein an output unit and an input unit are disposed below the pixel array unit of the first structure , the output unit including the output circuit unit , a first through hole via which is connected to the output circuit unit and which penetrates through a semiconductor substrate constituting part of the second structure , and an external terminal for signal output which connects the output circuit unit to the outside of the apparatus via the first through hole via , the input unit including the input circuit unit , a second through hole via which is connected to the input circuit unit and which penetrates through the semiconductor substrate, and an external terminal for signal input which connects the input circuit unit to the outside of the apparatus via the second through hole via , characterized in that the solid-state imaging apparatus is a cavity less structure, the laminate further comprises a glass substrate located above the first structure , and in that the solid-state imaging apparatus further comprises an on-chip lens above a photodiode of each pixel, wherein the on-chip lens is formed between the first structure and the glass substrate , and a cavity less glass seal resin disposed between the on-chip lens and the glass substrate , wherein the hardness of the glass seal resin is lower than the hardness of the glass substrate . <EOS>