Optoelectronic device having at least one mesa structure including at least: - a first and a second semiconductor portions, one being p-doped and the other being n-doped, and forming together a p-n junction, - a first electrode electrically connected to the first semiconductor portion which is arranged between the second semiconductor portion and the first electrode , the optoelectronic device further comprising at least: - a second electrode electrically connected to the second semiconductor portion , - an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions, and wherein upper faces of at least the first electrode and of the second electrode form a substantially planar continuous surface , and wherein the element able to ionize dopants of the first and/or second semiconductor portion comprises: - at least one dielectric passivation layer overlaying said at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of the space charge zone, and at least one electrically conductive gate such that the dielectric passivation layer is arranged between the gate and said at least one part of the first and/or second semiconductor portion and between the gate and said at least one part of the space charge zone, or - at least one metallic portion overlaying said at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of the space charge zone and forming a Schottky contact with said at least one part of the first and/or second semiconductor portion and with at least one part of the space charge zone, and wherein the first semiconductor portion is p-doped and comprises at least one semiconductor an acceptor activation energy of which is higher than or equal to around 200 meV, or wherein the first semiconductor portion is n-doped and comprises at least one semiconductor a donor activation energy of which is higher than or equal to around 200 meV. - a first and a second semiconductor portions, one being p-doped and the other being n-doped, and forming together a p-n junction, - a first electrode electrically connected to the first semiconductor portion which is arranged between the second semiconductor portion and the first electrode , - a second electrode electrically connected to the second semiconductor portion , - an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions, - at least one dielectric passivation layer overlaying said at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of the space charge zone, and at least one electrically conductive gate such that the dielectric passivation layer is arranged between the gate and said at least one part of the first and/or second semiconductor portion and between the gate and said at least one part of the space charge zone, or - at least one metallic portion overlaying said at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of the space charge zone and forming a Schottky contact with said at least one part of the first and/or second semiconductor portion and with at least one part of the space charge zone, <EOS>