A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer , a second conductive semiconductor layer , and an active layer ; a first electrode electrically connected to the first conductive semiconductor layer ; a second electrode electrically connected to the second conductive semiconductor layer ; a first cover electrode disposed on the first electrode ; and an insulation layer disposed between the first electrode and the second electrode , wherein the insulation layer comprises a first insulation layer disposed between the first electrode and the second electrode , and a second insulation layer disposed on the first insulation layer , wherein the first insulation layer comprises a first insulation portion (170-1) disposed between the first conductive semiconductor layer and the first cover electrode , and wherein the second insulation layer comprises a second insulation portion (170-2) disposed on the first cover electrode , wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion (170-1) and a lower surface of the second insulation portion (170-2), wherein the first electrode comprises a first groove disposed on an upper surface thereof, wherein the first cover electrode comprises a first uneven portion extending from the upper surface of the first electrode into the first groove , wherein the first insulation portion (170-1) is spaced apart from the first electrode defining a first space region between the first insulation portion (170-1) and the first electrode , and wherein the first cover electrode comprises a second uneven portion extending from the upper surface of the first electrode into the first space region and contacting the first conductive semiconductor layer . a light emitting structure including a first conductive semiconductor layer , a second conductive semiconductor layer , and an active layer ; a first electrode electrically connected to the first conductive semiconductor layer ; a second electrode electrically connected to the second conductive semiconductor layer ; a first cover electrode disposed on the first electrode ; and an insulation layer disposed between the first electrode and the second electrode , wherein the insulation layer comprises a first insulation layer disposed between the first electrode and the second electrode , and a second insulation layer disposed on the first insulation layer , wherein the first insulation layer comprises a first insulation portion (170-1) disposed between the first conductive semiconductor layer and the first cover electrode , and wherein the second insulation layer comprises a second insulation portion (170-2) disposed on the first cover electrode , wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion (170-1) and a lower surface of the second insulation portion (170-2), wherein the first electrode comprises a first groove disposed on an upper surface thereof, wherein the first cover electrode comprises a first uneven portion extending from the upper surface of the first electrode into the first groove , wherein the first insulation portion (170-1) is spaced apart from the first electrode defining a first space region between the first insulation portion (170-1) and the first electrode , and wherein the first cover electrode comprises a second uneven portion extending from the upper surface of the first electrode into the first space region and contacting the first conductive semiconductor layer . <EOS>