A display device, comprising: a substrate ; a plurality of cells provided with a partition wall protruding on the substrate, and sequentially arranged along one direction; a semiconductor light-emitting element accommodated in each of the plurality of cells , including: a first conductive electrode as a bottom layer of the semiconductor light-emitting element , a second conductive electrode as a top layer of the semiconductor light-emitting element , a first conductive semiconductor layer on which the first conductive electrode is disposed, a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, on which the second conductive electrode is disposed, and an active layer disposed between the first and second conductive semiconductor layers , wherein the first conductive electrode is disposed to face the first electrode ; and a first electrode provided with a plurality of electrode lines arranged at a bottom of each of the plurality of cells , and electrically connected to the semiconductor light-emitting element; a second electrode disposed on at least part of the second conductive electrode , and formed with an electrode line extending in a direction crossing the first electrode , wherein the bottom of each of the plurality of cells comprises a first region (1010a-1) covered by the plurality of electrode lines, and a second region (1010a-2) formed between the electrode lines, wherein the substrate comprises a dielectric layer and a third electrode , wherein the dielectric layer is configured to allow the first electrode to form electric field with the third electrode , and wherein each of the semiconductor light-emitting elements is configured for being accommodated in the plurality of cells by the electric field formed between the first electrode and the third electrode . a substrate ; a plurality of cells provided with a partition wall protruding on the substrate, and sequentially arranged along one direction; a semiconductor light-emitting element accommodated in each of the plurality of cells , including: a first conductive electrode as a bottom layer of the semiconductor light-emitting element , a second conductive electrode as a top layer of the semiconductor light-emitting element , a first conductive semiconductor layer on which the first conductive electrode is disposed, a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, on which the second conductive electrode is disposed, and an active layer disposed between the first and second conductive semiconductor layers , wherein the first conductive electrode is disposed to face the first electrode ; and a first electrode provided with a plurality of electrode lines arranged at a bottom of each of the plurality of cells , and electrically connected to the semiconductor light-emitting element; a second electrode disposed on at least part of the second conductive electrode , and formed with an electrode line extending in a direction crossing the first electrode , wherein the bottom of each of the plurality of cells comprises a first region (1010a-1) covered by the plurality of electrode lines, and a second region (1010a-2) formed between the electrode lines, wherein the substrate comprises a dielectric layer and a third electrode , wherein the dielectric layer is configured to allow the first electrode to form electric field with the third electrode , and wherein each of the semiconductor light-emitting elements is configured for being accommodated in the plurality of cells by the electric field formed between the first electrode and the third electrode . <EOS>