A semiconductor processing apparatus, comprising: a process chamber 1; a gas intake device 2; a base 3; and a flow guide structure 8, wherein: the process chamber includes a process area 11 and a transfer area 12 arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area; the base is vertically movable and is disposed in the transfer area for carrying a wafer; characterized in that : the flow guide structure is connected to a gas supply source, and is fixedly attached to the base; when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area; and an exhaust structure 13 is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position. a process chamber 1; a gas intake device 2; a base 3; and a flow guide structure 8, wherein: the process chamber includes a process area 11 and a transfer area 12 arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area; the base is vertically movable and is disposed in the transfer area for carrying a wafer; characterized in that : the flow guide structure is connected to a gas supply source, and is fixedly attached to the base; when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area; and an exhaust structure 13 is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position. the process chamber includes a process area 11 and a transfer area 12 arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area; the base is vertically movable and is disposed in the transfer area for carrying a wafer; characterized in that : the flow guide structure is connected to a gas supply source, and is fixedly attached to the base; when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area; and an exhaust structure 13 is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position. the flow guide structure is connected to a gas supply source, and is fixedly attached to the base; when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface, such that a gas wall is formed between the outer peripheral surface of the base and an inner peripheral surface of a sidewall of the process chamber to prevent the process gas in the process area from entering the transfer area; and an exhaust structure 13 is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position. <EOS>