A light emission device comprising: a substrate ; and a layer arrangement applied onto the substrate , comprising a first electrode layer made of a conductive material, arranged on the substrate , a second electrode layer made of a conductive material, at least one light-emitting layer made of an organic material, arranged between the first electrode layer and the second electrode layer and formed as an organic layer stack , and at least one intermediate layer comprising an optical lattice structure, arranged between the organic layer stack and the first electrode layer , wherein a first main surface of the intermediate layer faces the organic layer stack and the first main surface of the intermediate layer is formed to be planar within a manufacturing-induced tolerance range at least in the region of the optical lattice structure, wherein, in the light-emitting region of the intermediate layer , the tolerance range in the region of unevenness of the first main surface is in a range of less than +/- 20 nm and preferably +/- 10 nm; and wherein the intermediate layer is conductive at least in regions between the first main surface and a second main surface thereof, wherein the intermediate layer includes first and second lattice sub-regions , the first and second lattice sub-regions being arranged next to each other, and the first and second lattice sub-regions comprising an equal layer thickness so as to form a constant layer thickness (h 18 ) of the intermediate layer , and wherein the first lattice sub-region comprises doped amorphous silicon and the second lattice sub-region comprises silicon oxide; wherein the organic layer stack comprises a hole transport layer , an electron blocking layer , a light-emitting layer , a hole blocking layer and an electron transport layer ; and wherein the first main surface of the intermediate layer and the organic layer stack are directly adjacent to each other. a substrate ; and a layer arrangement applied onto the substrate , comprising a first electrode layer made of a conductive material, arranged on the substrate , a second electrode layer made of a conductive material, at least one light-emitting layer made of an organic material, arranged between the first electrode layer and the second electrode layer and formed as an organic layer stack , and at least one intermediate layer comprising an optical lattice structure, arranged between the organic layer stack and the first electrode layer , wherein a first main surface of the intermediate layer faces the organic layer stack and the first main surface of the intermediate layer is formed to be planar within a manufacturing-induced tolerance range at least in the region of the optical lattice structure, wherein, in the light-emitting region of the intermediate layer , the tolerance range in the region of unevenness of the first main surface is in a range of less than +/- 20 nm and preferably +/- 10 nm; and wherein the intermediate layer is conductive at least in regions between the first main surface and a second main surface thereof, wherein the intermediate layer includes first and second lattice sub-regions , the first and second lattice sub-regions being arranged next to each other, and the first and second lattice sub-regions comprising an equal layer thickness so as to form a constant layer thickness (h 18 ) of the intermediate layer , and wherein the first lattice sub-region comprises doped amorphous silicon and the second lattice sub-region comprises silicon oxide; wherein the organic layer stack comprises a hole transport layer , an electron blocking layer , a light-emitting layer , a hole blocking layer and an electron transport layer ; and wherein the first main surface of the intermediate layer and the organic layer stack are directly adjacent to each other. <EOS>