An organic light emitting pixel (PX), comprising: a first organic light emitting diode (OLED-R) configured to emit light with an n th order resonance mode of a first wavelength, n being a natural number of at least 1; a second organic light emitting diode (OLED-G) configured to emit light with the n th order resonance mode of a second wavelength, the second wavelength being shorter than the first wavelength; and a third organic light emitting diode (OLED-B) to emit light with an m th order resonance mode of a third wavelength, the third wavelength being shorter than the first and second wavelengths, and m being a natural number that is larger than n, wherein the first organic light emitting diode includes a first hole control layer, a first resonance control layer (SL-R) on the first hole control layer, a first light emitting layer (EML-R) on the first resonance control layer, the second organic light emitting diode includes a second hole control layer, a second resonance control layer (SL-G) on the second hole control layer, a second light emitting layer (EML-G) on the second resonance control layer, the third organic light emitting diode includes a third hole control layer, a third resonance control layer (SL-B) on the third hole layer, a third light emitting layer (EML-B) on the third resonance control layer, wherein a thickness of the third resonance control layer (SL-B) and the third light emitting layer (EML-B) is higher than a thickness of the first resonance control layer (SL-R) and the first light emitting layer (EML-R), and is higher than a thickness of the second resonance control layer (SL-G) and the second light emitting layer (EML-G), and characterized in that the third light emitting layer (EML-B) includes a first portion (EML-Bi) that overlaps with the first light emitting layer, a second portion (EML-B2) that overlaps with the second light emitting layer, and a third portion (EML-B3) that overlaps with the third resonance control layer. a first organic light emitting diode (OLED-R) configured to emit light with an n th order resonance mode of a first wavelength, n being a natural number of at least 1; a second organic light emitting diode (OLED-G) configured to emit light with the n th order resonance mode of a second wavelength, the second wavelength being shorter than the first wavelength; and a third organic light emitting diode (OLED-B) to emit light with an m th order resonance mode of a third wavelength, the third wavelength being shorter than the first and second wavelengths, and m being a natural number that is larger than n, wherein the first organic light emitting diode includes a first hole control layer, a first resonance control layer (SL-R) on the first hole control layer, a first light emitting layer (EML-R) on the first resonance control layer, the second organic light emitting diode includes a second hole control layer, a second resonance control layer (SL-G) on the second hole control layer, a second light emitting layer (EML-G) on the second resonance control layer, the third organic light emitting diode includes a third hole control layer, a third resonance control layer (SL-B) on the third hole layer, a third light emitting layer (EML-B) on the third resonance control layer, wherein a thickness of the third resonance control layer (SL-B) and the third light emitting layer (EML-B) is higher than a thickness of the first resonance control layer (SL-R) and the first light emitting layer (EML-R), and is higher than a thickness of the second resonance control layer (SL-G) and the second light emitting layer (EML-G), and characterized in that the third light emitting layer (EML-B) includes a first portion (EML-Bi) that overlaps with the first light emitting layer, a second portion (EML-B2) that overlaps with the second light emitting layer, and a third portion (EML-B3) that overlaps with the third resonance control layer. <EOS>