Acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate supported by posts formed below the substrate and configured to bend when the pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer (T) formed over the substrate; a first Bragg mirror (M1) formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror (M2) formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity (R1) formed between the interdigitated transducer and the first Bragg mirror; and a second resonance cavity (R2) formed between the interdigitated transducer and the second Bragg mirror; wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain; and wherein the acoustic wave pressure sensor device is hermetically sealed at some predetermined pressure above the substrate and exposed to pressure to be measured below the substrate; and wherein the substrate comprises a bulk substrate ; a dielectric layer formed on the bulk substrate and a piezoelectric layer formed on the dielectric layer; and wherein the interdigitated transducer (T) and the first and second Bragg mirrors (M1, M2) are formed on the piezoelectric layer and the first and second resonance cavities (R1, R2) comprise portions of the piezoelectric layer; and the piezoelectric layer is configured to bend when the pressure is applied to the substrate such that an area of the first kind of strain is formed in the piezoelectric layer and an area of the second kind of strain is formed in the piezoelectric layer; and wherein, in particular, the bulk substrate consists of or comprises Si, the dielectric layer consists of or comprises SiO 2 , and the piezoelectric layer consists of or comprises LiNbO 3 or LiTaO 3 . a substrate supported by posts formed below the substrate and configured to bend when the pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer (T) formed over the substrate; a first Bragg mirror (M1) formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror (M2) formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity (R1) formed between the interdigitated transducer and the first Bragg mirror; and a second resonance cavity (R2) formed between the interdigitated transducer and the second Bragg mirror; wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain; and wherein the acoustic wave pressure sensor device is hermetically sealed at some predetermined pressure above the substrate and exposed to pressure to be measured below the substrate; and wherein the substrate comprises a bulk substrate ; a dielectric layer formed on the bulk substrate and a piezoelectric layer formed on the dielectric layer; and wherein the interdigitated transducer (T) and the first and second Bragg mirrors (M1, M2) are formed on the piezoelectric layer and the first and second resonance cavities (R1, R2) comprise portions of the piezoelectric layer; and the piezoelectric layer is configured to bend when the pressure is applied to the substrate such that an area of the first kind of strain is formed in the piezoelectric layer and an area of the second kind of strain is formed in the piezoelectric layer; and wherein, in particular, the bulk substrate consists of or comprises Si, the dielectric layer consists of or comprises SiO 2 , and the piezoelectric layer consists of or comprises LiNbO 3 or LiTaO 3 . <EOS>