A matrix-array optoelectronic device comprising: - an electrically insulating substrate (S) bearing, on one of its surfaces, a matrix array (MEI) of so-called bottom electrodes (EI); - an active structure (STA) arranged above said matrix-array of bottom electrodes, and suitable for detecting light radiation; - and at least one so-called upper electrode (ES) extending continuously above said active structure, said upper electrode being transparent to the light radiation emitted or detected by the active structure; also comprising at least one conductive element (C2) that is borne by the substrate without interposition of said active structure and that is connected to said upper electrode by at least one vertical interconnection (IV), said conductive element having an electrical resistivity lower than that of said upper electrode; of which said or each said vertical interconnection is made of a material having a work function of value adapted so that the application, across the upper electrode and at least the bottom electrodes that are closest to said vertical interconnection, of a potential difference that allows said active structure to detect said light radiation, causes the appearance of a potential barrier that prevents the injection of parasitic electrical charge into said bottom electrodes through the active structure, characterised in that the height of the potential barrier between the vertical interconnection (IV) and the active structure (STA) is at least 0.3 eV; and in that : - said vertical interconnection passes through and is in direct contact with said active structure; and - said or at least one said conductive element is arranged on a substrate region that is located within said matrix-array of bottom electrodes. - an electrically insulating substrate (S) bearing, on one of its surfaces, a matrix array (MEI) of so-called bottom electrodes (EI); - an active structure (STA) arranged above said matrix-array of bottom electrodes, and suitable for detecting light radiation; - and at least one so-called upper electrode (ES) extending continuously above said active structure, said upper electrode being transparent to the light radiation emitted or detected by the active structure; also comprising at least one conductive element (C2) that is borne by the substrate without interposition of said active structure and that is connected to said upper electrode by at least one vertical interconnection (IV), said conductive element having an electrical resistivity lower than that of said upper electrode; of which said or each said vertical interconnection is made of a material having a work function of value adapted so that the application, across the upper electrode and at least the bottom electrodes that are closest to said vertical interconnection, of a potential difference that allows said active structure to detect said light radiation, causes the appearance of a potential barrier that prevents the injection of parasitic electrical charge into said bottom electrodes through the active structure, characterised in that the height of the potential barrier between the vertical interconnection (IV) and the active structure (STA) is at least 0.3 eV; and in that : - said vertical interconnection passes through and is in direct contact with said active structure; and - said or at least one said conductive element is arranged on a substrate region that is located within said matrix-array of bottom electrodes. - said vertical interconnection passes through and is in direct contact with said active structure; and - said or at least one said conductive element is arranged on a substrate region that is located within said matrix-array of bottom electrodes. <EOS>