A capacitive pressure sensor comprising: a silicon backing wafer ; a silicon sensing wafer comprising: a support portion bonded to the backing wafer, and a sensing portion , the sensing portion configured to detect pressure; characterized by an electrode assembly comprising: a first silicon layer comprising: an attachment portion bonded to the sensing wafer; and a sensing node , the sensing node centered over the sensing portion of the sensing wafer, wherein the sensing node is isolated from the sensing portion of the sensing wafer by a gap , and wherein the sensing node is isolated from the attachment portion of the first silicon layer by a separation area ; an insulating layer bonded to the first silicon layer opposite the sensing wafer; and a second silicon layer bonded to the insulating layer opposite the first silicon layer, the second silicon layer comprising: a first electrical contact electrically connected with the sensing wafer; and a second electrical contact electrically connected with the sensing node; and wherein the first electrical contact passes through the insulating layer and connects to the first silicon layer, and wherein the second electrical contact passes through the insulating layer and connects to the sensing node of the first silicon layer. a silicon backing wafer ; a silicon sensing wafer comprising: a support portion bonded to the backing wafer, and a sensing portion , the sensing portion configured to detect pressure; characterized by a support portion bonded to the backing wafer, and a sensing portion , the sensing portion configured to detect pressure; characterized by an electrode assembly comprising: a first silicon layer comprising: an attachment portion bonded to the sensing wafer; and a sensing node , the sensing node centered over the sensing portion of the sensing wafer, wherein the sensing node is isolated from the sensing portion of the sensing wafer by a gap , and wherein the sensing node is isolated from the attachment portion of the first silicon layer by a separation area ; an insulating layer bonded to the first silicon layer opposite the sensing wafer; and a second silicon layer bonded to the insulating layer opposite the first silicon layer, the second silicon layer comprising: a first electrical contact electrically connected with the sensing wafer; and a second electrical contact electrically connected with the sensing node; and a first silicon layer comprising: an attachment portion bonded to the sensing wafer; and a sensing node , the sensing node centered over the sensing portion of the sensing wafer, wherein the sensing node is isolated from the sensing portion of the sensing wafer by a gap , and wherein the sensing node is isolated from the attachment portion of the first silicon layer by a separation area ; an attachment portion bonded to the sensing wafer; and a sensing node , the sensing node centered over the sensing portion of the sensing wafer, wherein the sensing node is isolated from the sensing portion of the sensing wafer by a gap , and wherein the sensing node is isolated from the attachment portion of the first silicon layer by a separation area ; an insulating layer bonded to the first silicon layer opposite the sensing wafer; and a second silicon layer bonded to the insulating layer opposite the first silicon layer, the second silicon layer comprising: a first electrical contact electrically connected with the sensing wafer; and a second electrical contact electrically connected with the sensing node; and a first electrical contact electrically connected with the sensing wafer; and a second electrical contact electrically connected with the sensing node; and wherein the first electrical contact passes through the insulating layer and connects to the first silicon layer, and wherein the second electrical contact passes through the insulating layer and connects to the sensing node of the first silicon layer. <EOS>