An ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: - at least one p-type dopant comprising electron withdrawing groups; - at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has ≥ 1 to ≤ 3 nitrile groups and a melting point of < 100° C, wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile; wherein the ink composition comprises in addition at least one second auxiliary compound, which is liquid at 23° C, and wherein the at least one second auxiliary compound has a chemical structure that is different from the first auxiliary compound and is different from the p-type dopant; and wherein - the at least one p-type dopant, has ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one p-type dopant is ≥ 17 atomic percent to ≤ 90 atomic percent; - at least one organic charge transport material, having ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one organic charge transport material is ≥ 0 to < 17 atomic percent and having a melting point of ≥ 100° C; wherein the electron withdrawing groups of the at least one organic charge transport material of the ink composition are selected from fluorine, chlorine, bromine and/or nitrile; excluding an ink composition comprising 180 mg of spiro-OMe TAD hole transport material dissolved in 1 mL benzonitrile and further comprising 170 mg lithium-bis(trifluoromethanesulfonyl)imide dissolved in 1 mL acetonitrile and 17.5 μL t-butylpyridine. - at least one p-type dopant comprising electron withdrawing groups; - at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has ≥ 1 to ≤ 3 nitrile groups and a melting point of < 100° C, wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile; wherein the ink composition comprises in addition at least one second auxiliary compound, which is liquid at 23° C, and wherein the at least one second auxiliary compound has a chemical structure that is different from the first auxiliary compound and is different from the p-type dopant; and wherein - the at least one p-type dopant, has ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one p-type dopant is ≥ 17 atomic percent to ≤ 90 atomic percent; - at least one organic charge transport material, having ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one organic charge transport material is ≥ 0 to < 17 atomic percent and having a melting point of ≥ 100° C; - the at least one p-type dopant, has ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one p-type dopant is ≥ 17 atomic percent to ≤ 90 atomic percent; - at least one organic charge transport material, having ≥ 4 atoms and wherein the amount of electron withdrawing groups in the sum formula of the at least one organic charge transport material is ≥ 0 to < 17 atomic percent and having a melting point of ≥ 100° C; wherein the electron withdrawing groups of the at least one organic charge transport material of the ink composition are selected from fluorine, chlorine, bromine and/or nitrile; excluding an ink composition comprising 180 mg of spiro-OMe TAD hole transport material dissolved in 1 mL benzonitrile and further comprising 170 mg lithium-bis(trifluoromethanesulfonyl)imide dissolved in 1 mL acetonitrile and 17.5 μL t-butylpyridine. <EOS>