Method of manufacturing a hetero-junction solar cell , the solar cell comprising a front side for an incidence of light into the solar cell and a back side opposite to the front side, the method including the steps of - providing an n-doped and textured semiconductor substrate , said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate ; - forming at least one front layer on the front surface of the semiconductor substrate , said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one front layer is p-doped; - forming at least one back layer on the back surface of the semiconductor substrate , said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one back layer is n-doped; - forming an electrically conductive anti-reflection coating on the at least one front layer , said anti-reflection coating being at least partially transparent to the light irradiating into the solar cell ; - forming an electrically conductive back coating on the at least one back layer ; and - forming a front grid metallization on the anti-reflection coating ; wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate , leaving a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating , wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating , characterized in that the at least one front layer is formed prior to forming of the at least one back layer , the at least one back layer overlaps the at least one front layer and the electrically conductive anti-reflection coating covers the whole surface of the at least one front layer . - providing an n-doped and textured semiconductor substrate , said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate ; - forming at least one front layer on the front surface of the semiconductor substrate , said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one front layer is p-doped; - forming at least one back layer on the back surface of the semiconductor substrate , said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one back layer is n-doped; - forming an electrically conductive anti-reflection coating on the at least one front layer , said anti-reflection coating being at least partially transparent to the light irradiating into the solar cell ; - forming an electrically conductive back coating on the at least one back layer ; and - forming a front grid metallization on the anti-reflection coating ; wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate , leaving a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating , wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating , characterized in that the at least one front layer is formed prior to forming of the at least one back layer , <EOS>