A wafer processing laminate consisting of a support , a temporary adhesive material layer laminated on the support, and a wafer stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, the temporary adhesive material layer consisting of a first temporary adhesive layer composed of a thermoplastic resin layer (A) laminated on the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting resin layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a separation layer (C) laminated between the support and the thermosetting resin layer (B), the thermoplastic resin layer (A) being soluble in a cleaning liquid (D) after processing the wafer, the thermosetting resin layer (B) being insoluble in the cleaning liquid (D) after heat curing and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (B), the separation layer (C) having the following characteristic (I) or (II); (I) the support can be separated from the wafer processing laminate along the separation layer (C) such that the separation layer (C) does not remain on the thermosetting resin layer (B), the layer (C) having a peeling force of 0.5 gf or more and 50 gf or less which is required for peeling the thermosetting polymer layer (B) along an interface between the thermosetting polymer layer (B) and the separation layer (C), when the polymer layer (B) laminated on the separation layer (C) on the support is thermally cured, as measured by 180° peeling using a test piece having a width of 25 mm, (II) the support can be separated from the wafer processing laminate along the separation layer (C) such that the separation layer (C) partially or completely remains on the thermosetting resin layer (B), and the separation layer (C) is soluble in the cleaning liquid (D), or insoluble in the cleaning liquid (D) and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (C), the layer (C) having a peeling force of 0.5 gf or more and 50 gf or less which is required for peeling the thermosetting polymer layer (B) with cohesion failure of the separation layer (C), when the polymer layer (B) laminated on the separation layer (C) on the support is thermally cured, as measured by 180° peeling using a test piece having a width of 25 mm. (I) the support can be separated from the wafer processing laminate along the separation layer (C) such that the separation layer (C) does not remain on the thermosetting resin layer (B), the layer (C) having a peeling force of 0.5 gf or more and 50 gf or less which is required for peeling the thermosetting polymer layer (B) along an interface between the thermosetting polymer layer (B) and the separation layer (C), when the polymer layer (B) laminated on the separation layer (C) on the support is thermally cured, as measured by 180° peeling using a test piece having a width of 25 mm, (II) the support can be separated from the wafer processing laminate along the separation layer (C) such that the separation layer (C) partially or completely remains on the thermosetting resin layer (B), and the separation layer (C) is soluble in the cleaning liquid (D), or insoluble in the cleaning liquid (D) and capable of absorbing the cleaning liquid (D) such that the cleaning liquid (D) permeates into the layer (C), the layer (C) having a peeling force of 0.5 gf or more and 50 gf or less which is required for peeling the thermosetting polymer layer (B) with cohesion failure of the separation layer (C), when the polymer layer (B) laminated on the separation layer (C) on the support is thermally cured, <EOS>