A switching device comprising: a cascode switch comprising at least two transistors connected in series and receiving a switching control signal (U2); and a third switch (VT3) receiving the switching control signal (U2), wherein the at least two transistors comprise a first transistor (VT1) receiving the switching control signal (U2) through a control terminal and a second transistor (VT2) comprising a control terminal connected to a first voltage source (U1), and wherein a first terminal of the third switch (VT3) is connected to the control terminal of the second transistor (VT2) and a second terminal of the third switch (VT3) is connected to a first terminal of the second transistor (VT2), and the third switch (VT3) is turned off when the first transistor (VT1) is turned on, and is turned on when the first transistor (VT1) is turned off; wherein each of the first transistor (VT1) and the second transistor (VT2) is an N-type Metal Oxide Silicon Field Effect Transistor, MOSFET, and the third switch (VT3) is a P-type MOSFET; wherein the control terminal of the first transistor (VT1) is a gate, the control terminal of the second transistor (VT2) is a gate, and the control terminal of the third switch (VT3) is a gate; and wherein the first terminal of the second transistor (VT2) is a source; characterized in that : the first terminal of the third switch (VT3) is a drain and the second terminal of the third switch (VT3) is a source; and the switching device further comprises: a first diode (D1) comprising a cathode connected to the control terminal of the second transistor (VT2) and an anode connected to the first terminal of the second transistor (VT2), and being connected with the third switch (VT3) in parallel between the control terminal and the second terminal of the second transistor (VT2). a cascode switch comprising at least two transistors connected in series and receiving a switching control signal (U2); and a third switch (VT3) receiving the switching control signal (U2), wherein the at least two transistors comprise a first transistor (VT1) receiving the switching control signal (U2) through a control terminal and a second transistor (VT2) comprising a control terminal connected to a first voltage source (U1), and wherein a first terminal of the third switch (VT3) is connected to the control terminal of the second transistor (VT2) and a second terminal of the third switch (VT3) is connected to a first terminal of the second transistor (VT2), and the third switch (VT3) is turned off when the first transistor (VT1) is turned on, and is turned on when the first transistor (VT1) is turned off; wherein each of the first transistor (VT1) and the second transistor (VT2) is an N-type Metal Oxide Silicon Field Effect Transistor, MOSFET, and the third switch (VT3) is a P-type MOSFET; wherein the control terminal of the first transistor (VT1) is a gate, the control terminal of the second transistor (VT2) is a gate, and the control terminal of the third switch (VT3) is a gate; and wherein the first terminal of the second transistor (VT2) is a source; characterized in that : the first terminal of the third switch (VT3) is a drain and the second terminal of the third switch (VT3) is a source; and the switching device further comprises: the first terminal of the third switch (VT3) is a drain and the second terminal of the third switch (VT3) is a source; and the switching device further comprises: a first diode (D1) comprising a cathode connected to the control terminal of the second transistor (VT2) and an anode connected to the first terminal of the second transistor (VT2), and being connected with the third switch (VT3) in parallel between the control terminal and the second terminal of the second transistor (VT2). <EOS>