A light source unit comprising: a mounting substrate including interconnections ; a plurality of semiconductor light emitting devices mounted on the mounting substrate and connected to the interconnections , each of the plurality of semiconductor light emitting devices including: a semiconductor layer having a first face and a second face opposite to the first face , and including a light emitting layer ; a p-side electrode provided on the semiconductor layer ; an n-side electrode provided on the semiconductor layer ; a first insulating film covering the semiconductor layer , the p-side electrode , and the n-side electrode ; a p-side interconnection electrically connected to the p-side electrode ; an n-side interconnection electrically connected to the n-side electrode ; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection ; a first resin layer covering the plurality of semiconductor light emitting devices on the mounting substrate , the first resin layer transmitting light emitted from the light emitting layer ; and a second resin layer provided on the first resin layer , the second resin layer including a fluorescent substance arranged to emit light having a different wavelength from the light of the light emitting layer , wherein the first resin layer covers the first face and side face of the semiconductor devices and the surface of the mounting substrate between the adjacent semiconductor devices , the first resin layer having a flat surface on the second resin layer side. a mounting substrate including interconnections ; a plurality of semiconductor light emitting devices mounted on the mounting substrate and connected to the interconnections , each of the plurality of semiconductor light emitting devices including: a semiconductor layer having a first face and a second face opposite to the first face , and including a light emitting layer ; a p-side electrode provided on the semiconductor layer ; an n-side electrode provided on the semiconductor layer ; a first insulating film covering the semiconductor layer , the p-side electrode , and the n-side electrode ; a p-side interconnection electrically connected to the p-side electrode ; an n-side interconnection electrically connected to the n-side electrode ; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection ; a semiconductor layer having a first face and a second face opposite to the first face , and including a light emitting layer ; a p-side electrode provided on the semiconductor layer ; an n-side electrode provided on the semiconductor layer ; a first insulating film covering the semiconductor layer , the p-side electrode , and the n-side electrode ; a p-side interconnection electrically connected to the p-side electrode ; an n-side interconnection electrically connected to the n-side electrode ; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection ; a first resin layer covering the plurality of semiconductor light emitting devices on the mounting substrate , the first resin layer transmitting light emitted from the light emitting layer ; and a second resin layer provided on the first resin layer , the second resin layer including a fluorescent substance arranged to emit light having a different wavelength from the light of the light emitting layer , wherein the first resin layer covers the first face and side face of the semiconductor devices and the surface of the mounting substrate between the adjacent semiconductor devices , the first resin layer having a flat surface on the second resin layer side. <EOS>