A chip-scale gyrometric apparatus, comprising: a dielectric substrate ; at least one antenna element attached to the substrate and configured to receive an inbound signal associated with an initial phase; a splitter coupled to the antenna element and configured to split the inbound signal into a first signal and a second signal; a first coil and a second coil coupled to the splitter, the first coil configured to carry the first signal in a counterclockwise path relative to a rotational axis and the second coil configured to carry the second signal in a clockwise path relative to the rotational axis, wherein the first coil is structurally distinct from the second coil; and at least one integrated circuit, IC, attached to the substrate and coupled to the first coil and the second coil, the IC configured to: measure 1) a first phase associated with the first signal after travelling through the first coil, and 2) a second phase associated with the second signal after travelling through the second coil; determine a relative phase change based on a difference in phase between the first phase and the second phase; and determine, based on the relative phase change, a degree of rotation relative to the rotational axis, wherein the first coil and the second coil each are multilayer loops incorporating hundreds of loops of submicron thickness above the at least one IC. a dielectric substrate ; at least one antenna element attached to the substrate and configured to receive an inbound signal associated with an initial phase; a splitter coupled to the antenna element and configured to split the inbound signal into a first signal and a second signal; a first coil and a second coil coupled to the splitter, the first coil configured to carry the first signal in a counterclockwise path relative to a rotational axis and the second coil configured to carry the second signal in a clockwise path relative to the rotational axis, wherein the first coil is structurally distinct from the second coil; and at least one integrated circuit, IC, attached to the substrate and coupled to the first coil and the second coil, the IC configured to: measure 1) a first phase associated with the first signal after travelling through the first coil, and 2) a second phase associated with the second signal after travelling through the second coil; determine a relative phase change based on a difference in phase between the first phase and the second phase; and determine, based on the relative phase change, a degree of rotation relative to the rotational axis, wherein the first coil and the second coil each are multilayer loops incorporating hundreds of loops of submicron thickness above the at least one IC. measure 1) a first phase associated with the first signal after travelling through the first coil, and 2) a second phase associated with the second signal after travelling through the second coil; determine a relative phase change based on a difference in phase between the first phase and the second phase; and determine, based on the relative phase change, a degree of rotation relative to the rotational axis, wherein the first coil and the second coil each are multilayer loops incorporating hundreds of loops of submicron thickness above the at least one IC. <EOS>