A non-volatile memory arrangement comprising a plurality of cells arranged in array structure wherein each cell comprises a memory element and a read selector in series, - the memory element being a nano-electro-mechanical switch comprising an anchor , a beam fixed to the anchor , a first control gate , and a second control gate , for controlling the position of the beam , a first output node against which the beam can be positioned, - a read selector , the read selector comprising a first selector terminal , a second selector terminal , the first selector terminal connected to the first output node , wherein, - first control gates of nano-electro-mechanical switches belonging to a same word are connected together by a first write word line serving as control gate, - second control gates of nano-electro-mechanical switches belonging to a same word are connected together by a second write word line serving as control gate, wherein for a plurality of cells, the read selector comprises a first selector control gate and wherein the memory arrangement further comprises: - a read word line interconnecting the first selector control gates of the read selectors belonging to the same word, whereby the read selectors of a word can be enabled or disabled through the read word line belonging to that word, - a data line for sensing a signal, the data line interconnecting the anchors of the nano-electro-mechanical switches belonging to the same bit position within a word, - a read source line interconnecting the second selector terminals of the read selectors belonging to either the same word or to two neighbouring words, and wherein the read source line is parallel with the first write word line , - an interconnect line , wherein the read source lines are at a fixed potential and wherein the read source lines of the different words are interconnected with each other through the interconnect line . - the memory element being a nano-electro-mechanical switch comprising an anchor , a beam fixed to the anchor , a first control gate , and a second control gate , for controlling the position of the beam , a first output node against which the beam can be positioned, - a read selector , the read selector comprising a first selector terminal , a second selector terminal , the first selector terminal connected to the first output node , - first control gates of nano-electro-mechanical switches belonging to a same word are connected together by a first write word line serving as control gate, - second control gates of nano-electro-mechanical switches belonging to a same word are connected together by a second write word line serving as control gate, - a read word line interconnecting the first selector control gates of the read selectors belonging to the same word, whereby the read selectors of a word can be enabled or disabled through the read word line belonging to that word, - a data line for sensing a signal, the data line interconnecting the anchors of the nano-electro-mechanical switches belonging to the same bit position within a word, - a read source line interconnecting the second selector terminals of the read selectors belonging to either the same word or to two neighbouring words, and wherein the read source line is parallel with the first write word line , - an interconnect line , wherein the read source lines are at a fixed potential and wherein the read source lines of the different words are interconnected with each other through the interconnect line . <EOS>