A manufacturing method for a semiconductor substrate , the method comprising: an amorphous layer formation process (S2) in which a first amorphous layer is formed by destroying a crystalline structures of a surface of a support substrate and a second amorphous layer is formed by destroying a crystalline structures of a surface of a single-crystalline layer of a semiconductor ; a contact process (S3) in which the first amorphous layer and second amorphous layer are brought into contact with each other; and a heat treatment process (S4) in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other wherein the amorphous layer formation process includes irradiating atomic-level particles in a vacuum such that an oxide layer and an adsorption layer which are present in the surface of the support substrate and the surface of the single-crystalline layer are removed, and the contact process is carried out in a vacuum subsequent to the amorphous layer formation process such that surfaces rendered clean by removal from the surfaces of the oxide layer and the adsorption layer are bonded, and by virtue of the heat treatment process, the first and second amorphous layers (11b and 13b) are recrystallized from a state in which the atomic arrangement has no regularity to a state in which the atomic arrangement has a regularity such that atoms of the first amorphous layer are arranged following the crystalline structure of the support substrate and atoms of the second amorphous layer are arranged following the crystalline structure of the single-crystalline layer , characterized in that an amount of the irradiated atomic-level particles is determined depending on a thickness of the first amorphous layer and a thickness of the second amorphous layer. an amorphous layer formation process (S2) in which a first amorphous layer is formed by destroying a crystalline structures of a surface of a support substrate and a second amorphous layer is formed by destroying a crystalline structures of a surface of a single-crystalline layer of a semiconductor ; a contact process (S3) in which the first amorphous layer and second amorphous layer are brought into contact with each other; and a heat treatment process (S4) in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other wherein the amorphous layer formation process includes irradiating atomic-level particles in a vacuum such that an oxide layer and an adsorption layer which are present in the surface of the support substrate and the surface of the single-crystalline layer are removed, and the contact process is carried out in a vacuum subsequent to the amorphous layer formation process such that surfaces rendered clean by removal from the surfaces of the oxide layer and the adsorption layer are bonded, and by virtue of the heat treatment process, the first and second amorphous layers (11b and 13b) are recrystallized from a state in which the atomic arrangement has no regularity to a state in which the atomic arrangement has a regularity such that atoms of the first amorphous layer are arranged following the crystalline structure of the support substrate and atoms of the second amorphous layer are arranged following the crystalline structure of the single-crystalline layer , characterized in that an amount of the irradiated atomic-level particles is determined depending on a thickness of the first amorphous layer and a thickness of the second amorphous layer. <EOS>