A high density film for IC package, comprising: a bottom redistribution layer with (i) a plurality of, in cross-section, essentially rectangular bottom pads formed on bottom and, except for the bottom surface, embedded in a dielectric layer , and with (ii) a plurality of, in cross-section, essentially T-shaped first top pads formed on top and having a head portion and a VIA portion, the VIA portion being formed integrally with the head portion and vertically extending from the head portion in direction of the plurality of bottom pads , wherein the density of the plurality of bottom pads is higher than the density of the plurality of first top pads ; and a top redistribution layer with (i) a plurality of essentially T-shaped second top pads formed on top, wherein the density of the plurality of first top pads is higher than the density of the plurality of second top pads , and (ii) a redistribution circuitry with a plurality of essentially T-shaped metal pads, the metal pads having a head portion and a VIA portion, the VIA portion being formed integrally with the head portion and vertically extending from the head portion in direction of the bottom redistribution layer and electrically coupling the top redistribution layer with the bottom redistribution layer, wherein the VIA portion of each of the plurality of metal pads of the redistribution circuitry and the head portion of each of the plurality of first top pads are embedded in the same dielectric layer , the dielectric layer being arranged between the bottom redistribution layer and the top redistribution layer, and laterally encapsulating the bottom redistribution layer. a bottom redistribution layer with (i) a plurality of, in cross-section, essentially rectangular bottom pads formed on bottom and, except for the bottom surface, embedded in a dielectric layer , and with (ii) a plurality of, in cross-section, essentially T-shaped first top pads formed on top and having a head portion and a VIA portion, the VIA portion being formed integrally with the head portion and vertically extending from the head portion in direction of the plurality of bottom pads , wherein the density of the plurality of bottom pads is higher than the density of the plurality of first top pads ; and a top redistribution layer with (i) a plurality of essentially T-shaped second top pads formed on top, wherein the density of the plurality of first top pads is higher than the density of the plurality of second top pads , and (ii) a redistribution circuitry with a plurality of essentially T-shaped metal pads, the metal pads having a head portion and a VIA portion, the VIA portion being formed integrally with the head portion and vertically extending from the head portion in direction of the bottom redistribution layer and electrically coupling the top redistribution layer with the bottom redistribution layer, wherein the VIA portion of each of the plurality of metal pads of the redistribution circuitry and the head portion of each of the plurality of first top pads are embedded in the same dielectric layer , the dielectric layer being arranged between the bottom redistribution layer and the top redistribution layer, and laterally encapsulating the bottom redistribution layer. <EOS>