An electronic power device , comprising: a substrate of silicon carbide (SiC), having a front surface and a rear surface , which lie in respective planes parallel to a horizontal plane (xy) and are opposite to one another along a vertical axis (z) transverse to said horizontal plane (xy), the substrate including an active area (A'), arranged in which are, at said front surface , a number of doped regions , and an edge area (A"), being not active, distinct from and surrounding said active area (A'); a dielectric region , arranged above said front surface , at least in said edge area (A"); a passivation layer arranged above the front surface of said substrate , in contact with said dielectric region in said edge area (A"), wherein said passivation layer comprises at least one anchorage region that extends above the front surface of said substrate , throughout the thickness of said dielectric region at said edge area (A") and up to said front surface , and is configured to define a mechanical anchorage for said passivation layer , said anchorage region comprises: a first portion , arranged within said dielectric region and having a first width (W 1 ) along an axis of said horizontal plane (xy); and a second portion , overlying said first portion , centrally thereto, and having a second width (W 2 ); said first portion being arranged in direct contact, at the top, with a first and a second abutment element , which are arranged laterally and on opposite side of said second portion characterized in that said second width (w 2 ) is smaller than said first width (w 1 ) along said axis of the horizontal plane (xy). a substrate of silicon carbide (SiC), having a front surface and a rear surface , which lie in respective planes parallel to a horizontal plane (xy) and are opposite to one another along a vertical axis (z) transverse to said horizontal plane (xy), the substrate including an active area (A'), arranged in which are, at said front surface , a number of doped regions , and an edge area (A"), being not active, distinct from and surrounding said active area (A'); a dielectric region , arranged above said front surface , at least in said edge area (A"); a passivation layer arranged above the front surface of said substrate , in contact with said dielectric region in said edge area (A"), wherein said passivation layer comprises at least one anchorage region that extends above the front surface of said substrate , throughout the thickness of said dielectric region at said edge area (A") and up to said front surface , and is configured to define a mechanical anchorage for said passivation layer , said anchorage region comprises: a first portion , arranged within said dielectric region and having a first width (W 1 ) along an axis of said horizontal plane (xy); and a second portion , overlying said first portion , centrally thereto, and having a second width (W 2 ); said first portion being arranged in direct contact, at the top, with a first and a second abutment element , which are arranged laterally and on opposite side of said second portion characterized in that said second width (w 2 ) is smaller than said first width (w 1 ) along said axis of the horizontal plane (xy). <EOS>