A method for manufacturing a superconducting device in a superconducting base layer which at least partly covers a substrate , wherein the substrate defines a device plane and the superconducting base layer comprises at least one trench which extends from a first point in the device plane to a second point in the device plane, wherein the superconducting base layer also comprises a cavity which lies between the first point and the second point, so that the trench crosses the cavity, and the trench and the cavity extend through the superconducting base layer, the method comprising the steps of: - placing a stencil mask which comprises an opening over the superconducting base layer so that the opening is aligned over the cavity , - performing a first angle evaporation through the stencil mask, where a first junction layer is deposited on a first sidewall of the cavity and on the cavity bottom , - performing an oxidation step where the first junction layer is oxidized to form a first insulating layer on the surface of the first junction layer, and - performing a second angle evaporation through the stencil mask, where a second junction layer is deposited on a second sidewall of the cavity and on the cavity bottom, wherein the second sidewall of the cavity is opposed to the first sidewall of the cavity, so that the second junction layer overlaps with the first insulating layer on the cavity bottom, wherein at least one of the first and second junction layers is made of a superconducting material. wherein the superconducting base layer also comprises a cavity which lies between the first point and the second point, so that the trench crosses the cavity, and the trench and the cavity extend through the superconducting base layer, the method comprising the steps of: - placing a stencil mask which comprises an opening over the superconducting base layer so that the opening is aligned over the cavity , - performing a first angle evaporation through the stencil mask, where a first junction layer is deposited on a first sidewall of the cavity and on the cavity bottom , - performing an oxidation step where the first junction layer is oxidized to form a first insulating layer on the surface of the first junction layer, and - performing a second angle evaporation through the stencil mask, where a second junction layer is deposited on a second sidewall of the cavity and on the cavity bottom, wherein the second sidewall of the cavity is opposed to the first sidewall of the cavity, so that the second junction layer overlaps with the first insulating layer on the cavity bottom, - placing a stencil mask which comprises an opening over the superconducting base layer so that the opening is aligned over the cavity , - performing a first angle evaporation through the stencil mask, where a first junction layer is deposited on a first sidewall of the cavity and on the cavity bottom , - performing an oxidation step where the first junction layer is oxidized to form a first insulating layer on the surface of the first junction layer, and - performing a second angle evaporation through the stencil mask, where a second junction layer is deposited on a second sidewall of the cavity and on the cavity bottom, wherein the second sidewall of the cavity is opposed to the first sidewall of the cavity, so that the second junction layer overlaps with the first insulating layer on the cavity bottom, wherein at least one of the first and second junction layers is made of a superconducting material. <EOS>