mhurhangee/patent-ind-claim-en huggingface dataset:
An inkjet recording method for printing an inkjet recording medium with inkjet ink as aqueous pigment ink, the inkjet recording medium comprising an ink-receiving layer containing inorganic pigment, starch and copolymer latex and not containing a multivalent salt at least on one surface of a base, from 10 g/m 2 or more to 35 g/m 2 or less of the inorganic pigment being contained in the ink-receiving layer in terms of a solid content, a content of calcium carbonate in the inorganic pigment being from 80 % by weight or more to 100 % or less by weight, a content of silica in the inorganic pigment being from 0 % by weight or more to 10 % by weight or less, the starch being contained at 1.0 parts by weight or more to less than 3.0 parts by weight, and the copolymer latex being contained at from 5.0 parts by weight or more to 7.0 parts by weight or less with respect to 100 parts by weight of the inorganic pigment, the inkjet ink containing one or more types of pigment selected from self dispersed pigment and pigment containing water-insoluble polymer particles, from 10 % by weight or more to 48 % by weight or less of a water-soluble organic solvent A having a boiling point of 230 °C or less , from 0 % by weight or more to 10.0 % by weight or less of a water-soluble organic solvent having a boiling point of above 230 °C , from 0 % by weight or more to 5.0 % by weight or less of a water-soluble organic solvent B having a boiling point of 280 °C or more, from 42 % by weight or more to 70 % by weight or less of water wherein the printing is performed by one-pass printing at a frequency of 20 kHz or more. the inkjet recording medium comprising an ink-receiving layer containing inorganic pigment, starch and copolymer latex and not containing a multivalent salt at least on one surface of a base, from 10 g/m 2 or more to 35 g/m 2 or less of the inorganic pigment being contained in the ink-receiving layer in terms of a solid content, a content of calcium carbonate in the inorganic pigment being from 80 % by weight or more to 100 % or less by weight, a content of silica in the inorganic pigment being from 0 % by weight or more to 10 % by weight or less, the starch being contained at 1.0 parts by weight or more to less than 3.0 parts by weight, and the copolymer latex being contained at from 5.0 parts by weight or more to 7.0 parts by weight or less with respect to 100 parts by weight of the inorganic pigment, the inkjet ink containing one or more types of pigment selected from self dispersed pigment and pigment containing water-insoluble polymer particles, from 10 % by weight or more to 48 % by weight or less of a water-soluble organic solvent A having a boiling point of 230 °C or less , from 0 % by weight or more to 10.0 % by weight or less of a water-soluble organic solvent having a boiling point of above 230 °C , from 0 % by weight or more to 5.0 % by weight or less of a water-soluble organic solvent B having a boiling point of 280 °C or more, from 42 % by weight or more to 70 % by weight or less of water wherein the printing is performed by one-pass printing at a frequency of 20 kHz or more.
A fatty acid for use in the prophylaxis or treatment of a disease relating to metabolism, wherein the disease relating to metabolism is at least one kind selected from the group consisting of obesity, diabetes, lipid metabolism abnormality, hyperlipidemia, and fatty liver, wherein said fatty acid is an unsaturated fatty acid having at least one cis double bond at the 15-position, which has 18 carbon atoms and a hydroxyl group or carbonyl group at the 13-position selected from the group consisting of 13-hydroxy-cis-9,cis-15-octadecadienoic acid, 13-hydroxy-cis-6,cis-9,cis-15-octadecatrienoic acid, 10,13-dihydroxy-cis-15-octadecenoic acid, 10,13-dihydroxy-cis-6,cis-15-octadecadienoic acid, 10-oxo-13-hydroxy-cis-15-octadecenoic acid, 10-oxo-13-hydroxy-cis-6,cis-15-octadecadienoic acid, 13-oxo-cis-9,cis-15-octadecadienoic acid, 13-oxo-cis-6,cis-9,cis-15-octadecatrienoic acid, 10,13-dioxo-cis-15-octadecenoic acid and 10,13-dioxo-cis-6,cis-15-octadecadienoic acid.
A vehicle occupant detection device , comprising: a sensor unit disposed in a vehicle to detect biometric information of a first occupant (P1) located in a front seat of the vehicle and a second occupant (P2) located in a rear seat of the vehicle; a control unit analyzing the biometric information measured by the sensor unit ; and an output unit outputting a warning message on the basis of the information analyzed by the control unit , wherein the control unit determines that the second occupant (P2) located in the rear seat is in a dangerous state when the biometric information is not detected in the front seat but detected in the rear seat by the sensor unit , characterized in that the sensor unit is an impulse-radio ultra-wideband (IR-UWB) communication sensor, and the sensor unit covers a range in a direction in which the vehicle occupant detection device is installed, and a range in a direction opposite to the installed direction. a sensor unit disposed in a vehicle to detect biometric information of a first occupant (P1) located in a front seat of the vehicle and a second occupant (P2) located in a rear seat of the vehicle; a control unit analyzing the biometric information measured by the sensor unit ; and an output unit outputting a warning message on the basis of the information analyzed by the control unit , wherein the control unit determines that the second occupant (P2) located in the rear seat is in a dangerous state when the biometric information is not detected in the front seat but detected in the rear seat by the sensor unit , characterized in that the sensor unit is an impulse-radio ultra-wideband (IR-UWB) communication sensor, and the sensor unit covers a range in a direction in which the vehicle occupant detection device is installed, and a range in a direction opposite to the installed direction.
A processor , characterized in comprising: an internal memory , storing an array of constants Kt required in a secure hash algorithm (SHA), where iterations in each loop of the secure hash algorithm are numbered by t, and t changes from 0 to a natural number (L-1) during each loop of the secure hash algorithm; and a set of execution units , including an execution unit group required in the secure hash algorithm, wherein: the execution unit group retrieves the constants Kt from the internal memory to update working variables used in the secure hash algorithm; the constants Kt are factory burned-in values in the internal memory to be retrieved by the execution unit group; the execution unit group receives a get-value W+K instruction; and a read address of at least one of the constants Kt is directly contained in the get-value W+K instruction for the execution unit group to retrieve at least one of the constants Kt from the internal memory. an internal memory , storing an array of constants Kt required in a secure hash algorithm (SHA), where iterations in each loop of the secure hash algorithm are numbered by t, and t changes from 0 to a natural number (L-1) during each loop of the secure hash algorithm; and a set of execution units , including an execution unit group required in the secure hash algorithm, wherein: the execution unit group retrieves the constants Kt from the internal memory to update working variables used in the secure hash algorithm; the constants Kt are factory burned-in values in the internal memory to be retrieved by the execution unit group; the execution unit group receives a get-value W+K instruction; and a read address of at least one of the constants Kt is directly contained in the get-value W+K instruction for the execution unit group to retrieve at least one of the constants Kt from the internal memory. the execution unit group retrieves the constants Kt from the internal memory to update working variables used in the secure hash algorithm; the constants Kt are factory burned-in values in the internal memory to be retrieved by the execution unit group; the execution unit group receives a get-value W+K instruction; and a read address of at least one of the constants Kt is directly contained in the get-value W+K instruction for the execution unit group to retrieve at least one of the constants Kt from the internal memory.
A system for controlling an electric vehicle, the electric vehicle comprising a main power supply for propulsion of the vehicle and at least one brake power supply for at least the one braking actuator , with: - a propulsion control unit for controlling at least one propulsion actuator ; - at least one brake control unit for controlling the at least one brake actuator , and a control line between the propulsion control unit and the at least one brake control unit for exchanging commands or information about a failure of one component and/or providing a backup control, wherein the propulsion control unit is further configured to control one or more propulsion actuators to perform a backup braking or a backup steering, characterized in that , if the at least one brake control unit has a failure, the propulsion control unit is configured to take over the control by accessing, via the brake control unit the at least one brake actuator . - a propulsion control unit for controlling at least one propulsion actuator ; - at least one brake control unit for controlling the at least one brake actuator , and a control line between the propulsion control unit and the at least one brake control unit for exchanging commands or information about a failure of one component and/or providing a backup control, wherein the propulsion control unit is further configured to control one or more propulsion actuators to perform a backup braking or a backup steering, characterized in that , if the at least one brake control unit has a failure, the propulsion control unit is configured to take over the control by accessing, via the brake control unit the at least one brake actuator .
A nitride semiconductor light-emitting element comprising: an n-type nitride semiconductor layer ; a nitride semiconductor active layer provided on said n-type nitride semiconductor layer ; and a p-type nitride semiconductor layer provided on said nitride semiconductor active layer , wherein said p-type nitride semiconductor layer includes a first p-type nitride semiconductor layer , a second p-type nitride semiconductor layer and a third p-type nitride semiconductor layer in this order from the side of said nitride semiconductor active layer , said first p-type nitride semiconductor layer and said second p-type nitride semiconductor layer contain Al respectively, an absolute value of a difference between an average Al composition (x5) in a material which said first p-type nitride semiconductor layer is composed of, and an average Al composition (x6) in a material which said second p-type nitride semiconductor layer is composed of, is at most 0.02, said third p-type nitride semiconductor layer has a smaller band gap than said second p-type nitride semiconductor layer , and the p-type impurity concentration in said second p-type nitride semiconductor layer and the p-type impurity concentration in said third p-type nitride semiconductor layer are lower than the p-type impurity concentration in said first p-type nitride semiconductor layer respectively. an n-type nitride semiconductor layer ; a nitride semiconductor active layer provided on said n-type nitride semiconductor layer ; and a p-type nitride semiconductor layer provided on said nitride semiconductor active layer , wherein said p-type nitride semiconductor layer includes a first p-type nitride semiconductor layer , a second p-type nitride semiconductor layer and a third p-type nitride semiconductor layer in this order from the side of said nitride semiconductor active layer , said first p-type nitride semiconductor layer and said second p-type nitride semiconductor layer contain Al respectively, an absolute value of a difference between an average Al composition (x5) in a material which said first p-type nitride semiconductor layer is composed of, and an average Al composition (x6) in a material which said second p-type nitride semiconductor layer is composed of, is at most 0.02, said third p-type nitride semiconductor layer has a smaller band gap than said second p-type nitride semiconductor layer , and the p-type impurity concentration in said second p-type nitride semiconductor layer and the p-type impurity concentration in said third p-type nitride semiconductor layer are lower than the p-type impurity concentration in said first p-type nitride semiconductor layer respectively.
An optoelectronic device , comprising: a semiconductor substrate ; an array of optical emitters, arranged on the substrate in a two-dimensional pattern, wherein the two-dimensional pattern of the optical emitters is divided into two or more subsets that are individually addressable; a projection lens , which is mounted on the semiconductor substrate and is configured to collect and focus light emitted by the optical emitters so as to project optical beams containing a baseline pattern corresponding to the two-dimensional pattern of the optical emitters on the substrate; a diffractive optical element , DOE, which is mounted on the substrate and is configured to produce and project a composite pattern comprising multiple overlapping replicas of the baseline pattern; and control circuitry that is configured to address combinations of one or more of the subsets so as to control the overlapping replicas for creating multiple different pattern densities. a semiconductor substrate ; an array of optical emitters, arranged on the substrate in a two-dimensional pattern, wherein the two-dimensional pattern of the optical emitters is divided into two or more subsets that are individually addressable; a projection lens , which is mounted on the semiconductor substrate and is configured to collect and focus light emitted by the optical emitters so as to project optical beams containing a baseline pattern corresponding to the two-dimensional pattern of the optical emitters on the substrate; a diffractive optical element , DOE, which is mounted on the substrate and is configured to produce and project a composite pattern comprising multiple overlapping replicas of the baseline pattern; and control circuitry that is configured to address combinations of one or more of the subsets so as to control the overlapping replicas for creating multiple different pattern densities.
Elevator door comprising: at least two sliding door panels ; means for moving said door panels between a first configuration wherein the door is closed and a second configuration wherein the door is open and vice versa; a sill that can be horizontally aligned with a further sill , characterised in that said door comprises: a profile for each door panel , said profile being arranged below the corresponding door panel and having a first portion integrally constrained to said door panel and a second portion projecting towards said further sill , the profiles being partially counter-shaped so as to slide with respect to one another therefore when passing from the first to the second configuration said second projecting portions move towards one another in order to compose said sill which projects towards the further sill , and when passing from the second to the first configuration said second projecting portions move away from one another in order to disassemble said sill , each door panel dragging through its motion the corresponding profile integral to it. at least two sliding door panels ; means for moving said door panels between a first configuration wherein the door is closed and a second configuration wherein the door is open and vice versa; a sill that can be horizontally aligned with a further sill , characterised in that said door comprises: a profile for each door panel , said profile being arranged below the corresponding door panel and having a first portion integrally constrained to said door panel and a second portion projecting towards said further sill , the profiles being partially counter-shaped so as to slide with respect to one another therefore when passing from the first to the second configuration said second projecting portions move towards one another in order to compose said sill which projects towards the further sill , and when passing from the second to the first configuration said second projecting portions move away from one another in order to disassemble said sill , each door panel dragging through its motion the corresponding profile integral to it.
A method for airborne rooting and/or callusing of cuttings, comprising: placing at least one unrooted cutting having a basal portion and a top portion into at least one receptacle, wherein said basal portion is held in the receptacle; and humidifying the unrooted cutting to generate at least one callused or rooted cutting; without any direct application of a liquid to the basal portion of said unrooted cutting; characterised in that a basal portion of the at least one unrooted cutting is kept at or below 10.8 lux. placing at least one unrooted cutting having a basal portion and a top portion into at least one receptacle, wherein said basal portion is held in the receptacle; and humidifying the unrooted cutting to generate at least one callused or rooted cutting; without any direct application of a liquid to the basal portion of said unrooted cutting; characterised in that a basal portion of the at least one unrooted cutting is kept at or below 10.8 lux.
A method including the steps of: receiving data from an analyzing device (106; 108) representative of a compressed natural gas sample analysis (S204); determining a set of established processes for a Methane number generation compatible with the particular analyzing device; selecting a first established process from the process set corresponding to a first selected Methane number generation protocol (S202); applying, via at least one processor, the first established process to the obtained data from the analyzing device (106; 108) to calculate the first Methane number as a function of the selected Methane number generation protocol (S206); coincidentally calculating a second Methane number for the compressed natural gas according to a second established process by applying a second selected protocol and the data received from the analyzing device; comparing the first Methane number to a predetermined threshold (S410); and refining the compressed natural gas fuel as a function of the comparison (S412). receiving data from an analyzing device (106; 108) representative of a compressed natural gas sample analysis (S204); determining a set of established processes for a Methane number generation compatible with the particular analyzing device; selecting a first established process from the process set corresponding to a first selected Methane number generation protocol (S202); applying, via at least one processor, the first established process to the obtained data from the analyzing device (106; 108) to calculate the first Methane number as a function of the selected Methane number generation protocol (S206); coincidentally calculating a second Methane number for the compressed natural gas according to a second established process by applying a second selected protocol and the data received from the analyzing device; comparing the first Methane number to a predetermined threshold (S410); and refining the compressed natural gas fuel as a function of the comparison (S412).
Method for controlling a DC-DC voltage converter having a primary-side full bridge , a secondary-side full bridge and a transformer which is arranged between the primary-side full bridge and the secondary-side full bridge , wherein the method comprises the following steps, wherein the steps are repeated periodically for energy transmission from the primary side to the secondary side of the DC-DC voltage converter: controlling (S1) a first diagonal branch in the secondary-side full bridge while the primary side of the transformer is short-circuited by means of the primary-side full bridge , subsequently, closing (S2) a first diagonal branch of the primary-side full bridge ; subsequently, short-circuiting (S3) the primary side of the transformer by means of the primary-side full bridge ; subsequently, opening (S4) all of the switching elements in the secondary-side full bridge ; subsequently, controlling (S5) a second diagonal branch in the secondary-side full bridge while the primary side of the transformer is short-circuited by means of the primary-side full bridge , wherein the second diagonal branch of the secondary-side full bridge is complementary to the first diagonal branch of the secondary-side full bridge ; subsequently, closing (S6) a second diagonal branch of the primary-side full bridge , wherein the second diagonal branch of the primary-side full bridge is complementary to the first diagonal branch of the primary-side full bridge ; subsequently, short-circuiting (S7) the primary side of the transformer by means of the primary-side full bridge ; and subsequently, opening (S8) all of the switching elements in the secondary-side full bridge . controlling (S1) a first diagonal branch in the secondary-side full bridge while the primary side of the transformer is short-circuited by means of the primary-side full bridge , subsequently, closing (S2) a first diagonal branch of the primary-side full bridge ; subsequently, short-circuiting (S3) the primary side of the transformer by means of the primary-side full bridge ; subsequently, opening (S4) all of the switching elements in the secondary-side full bridge ; subsequently, controlling (S5) a second diagonal branch in the secondary-side full bridge while the primary side of the transformer is short-circuited by means of the primary-side full bridge , wherein the second diagonal branch of the secondary-side full bridge is complementary to the first diagonal branch of the secondary-side full bridge ; subsequently, closing (S6) a second diagonal branch of the primary-side full bridge , wherein the second diagonal branch of the primary-side full bridge is complementary to the first diagonal branch of the primary-side full bridge ; subsequently, short-circuiting (S7) the primary side of the transformer by means of the primary-side full bridge ; and subsequently, opening (S8) all of the switching elements in the secondary-side full bridge .
A polymer dispersion comprising a hyperbranched polymer, wherein the hyperbranched polymer comprises the reaction product of: a partially neutralized, acid-functional resin; and an epoxy; wherein: the partially neutralized, acid functional resin is the reaction product of an acid-functional resin and at least a functionalized amine; the hyperbranched polymer comprises a carboxyl group, a hydroxyl group, an amino group, a uredo group, an acetoacetoxy group, a diacetone group, or a combination of any two or more thereof; and the polymer dispersion is an aqueous, cross-linkable, polymer dispersion. a partially neutralized, acid-functional resin; and an epoxy; the partially neutralized, acid functional resin is the reaction product of an acid-functional resin and at least a functionalized amine; the hyperbranched polymer comprises a carboxyl group, a hydroxyl group, an amino group, a uredo group, an acetoacetoxy group, a diacetone group, or a combination of any two or more thereof; and the polymer dispersion is an aqueous, cross-linkable, polymer dispersion.