Semiconductor module, - wherein the semiconductor module comprises a substrate made from an electrically insulating material, - wherein a structured metal layer , via which at least one electrical component is contacted, is applied to a top side of the substrate , - wherein the structured metal layer is applied to the substrate only in a central region of the substrate such that an edge region surrounding the central region and in which the structured metal layer is not applied to the substrate is left on the top side of the substrate , - wherein a contact layer for contacting a cooling body and which is situated opposite the structured metal layer is applied to the bottom side of the substrate in the central region , - wherein a structured supporting structure , the thickness (d2) of which corresponds to the thickness (d1) of the contact layer , is applied to the bottom side of the substrate in the edge region , characterized - in that the supporting structure has a plurality of structure elements , - in that either only a bridging structure with a significantly reduced thickness (d3) compared with the structure elements is situated between the structure elements or the structure elements are completely separate from one another, and - in that , with respect to any part region of the supporting structure , the supporting structure has an initial cross-section at its end facing the bottom side and a remaining cross-section at its end facing away from the bottom side , and in that the cross-section decreases at first monotonously, in particular strictly monotonously, the greater the distance from the bottom side until the cross-section has a minimum cross-section. - wherein the semiconductor module comprises a substrate made from an electrically insulating material, - wherein a structured metal layer , via which at least one electrical component is contacted, is applied to a top side of the substrate , - wherein the structured metal layer is applied to the substrate only in a central region of the substrate such that an edge region surrounding the central region and in which the structured metal layer is not applied to the substrate is left on the top side of the substrate , - wherein a contact layer for contacting a cooling body and which is situated opposite the structured metal layer is applied to the bottom side of the substrate in the central region , - wherein a structured supporting structure , the thickness (d2) of which corresponds to the thickness (d1) of the contact layer , is applied to the bottom side of the substrate in the edge region , characterized - in that the supporting structure has a plurality of structure elements , - in that either only a bridging structure with a significantly reduced thickness (d3) compared with the structure elements is situated between the structure elements or the structure elements are completely separate from one another, and - in that , with respect to any part region of the supporting structure , the supporting structure has an initial cross-section at its end facing the bottom side and a remaining cross-section at its end facing away from the bottom side , and in that the cross-section decreases at first monotonously, in particular strictly monotonously, the greater the distance from the bottom side until the cross-section has a minimum cross-section. <EOS>