A hard film coated on a surface of a base material , the hard film configured to include a layer A , a layer B , and a nanolayer-alternating layer alternately laminated by a physical vapor deposition method to a total film thickness of 0.5 to 20 μm, wherein the layer A is an AlTiCr nitride having a composition formula of (Al a Ti b Cr c α d )N, where α is one or more elements selected from a group consisting of C, B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios a, b, c, d respectively satisfy 0.10≤a≤0.85, 0.02≤b≤0.70, 0.03≤c≤0.65, 0≤d≤0.10, and a+b+c+d=1, and has a thickness of 0.5 to 1000 nm, wherein the layer B is an AlTiCr nitride or AlTiCr carbonitride having a composition formula of (Al e Ti f Cr g β h )C x N 1-X , where β is one or more elements selected from a group consisting of B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios e, f, g, h, and X respectively satisfy 0.10≤e≤0.85, 0.02≤f≤0.70, 0.03≤g≤0.65, 0≤h≤0.10, e+f+g+h=1, and 0≤X≤0.6, and has a thickness of 0.5 to 1000 nm, wherein the nanolayer-alternating layer is formed by alternately laminating a nanolayer A or a nanolayer B having the same composition as the layer A or the layer B and a layer C and has a thickness of 1 to 1000 nm, wherein the nanolayer A and the nanolayer B each have a thickness of 0.5 to 500 nm, and wherein the layer C is an AlCr(SiC) nitride or AlCr(SiC) carbonitride having a composition formula of [Al i Cr j (SiC) k γ l ]C Y N 1-Y , where γ is one or more elements selected from a group consisting of B, Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios i, j, k, I, and Y respectively satisfy 0.20≤i≤0.85, 0.05≤j≤0.50, 0.01≤k≤0.45, 0≤l≤0.10, i+j+k+l=1, and 0≤Y≤0.6, and has a thickness of 0.5 to 500 nm. the layer A is an AlTiCr nitride having a composition formula of (Al a Ti b Cr c α d )N, where α is one or more elements selected from a group consisting of C, B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios a, b, c, d respectively satisfy 0.10≤a≤0.85, 0.02≤b≤0.70, 0.03≤c≤0.65, 0≤d≤0.10, and a+b+c+d=1, and has a thickness of 0.5 to 1000 nm, wherein the layer B is an AlTiCr nitride or AlTiCr carbonitride having a composition formula of (Al e Ti f Cr g β h )C x N 1-X , where β is one or more elements selected from a group consisting of B, Si, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios e, f, g, h, and X respectively satisfy 0.10≤e≤0.85, 0.02≤f≤0.70, 0.03≤g≤0.65, 0≤h≤0.10, e+f+g+h=1, and 0≤X≤0.6, and has a thickness of 0.5 to 1000 nm, wherein the nanolayer-alternating layer is formed by alternately laminating a nanolayer A or a nanolayer B having the same composition as the layer A or the layer B and a layer C and has a thickness of 1 to 1000 nm, wherein the nanolayer A and the nanolayer B each have a thickness of 0.5 to 500 nm, and wherein the layer C is an AlCr(SiC) nitride or AlCr(SiC) carbonitride having a composition formula of [Al i Cr j (SiC) k γ l ]C Y N 1-Y , where γ is one or more elements selected from a group consisting of B, Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W and atomic ratios i, j, k, I, and Y respectively satisfy 0.20≤i≤0.85, 0.05≤j≤0.50, 0.01≤k≤0.45, 0≤l≤0.10, i+j+k+l=1, and 0≤Y≤0.6, and has a thickness of 0.5 to 500 nm. <EOS>