Photodiode , having a first surface and a second surface that are opposite one another and parallel to a main plane, comprising: o a detection portion , made of a semiconductor material, comprising: • a first region doped with a first conductivity type and flush with the first surface , and intended to be electrically biased; • a second region doped with a second conductivity type opposite the first type, and flush with the second surface ; • an intermediate region , located between the first region and the second region ; o a dielectric layer , covering the detection portion on the first surface while coming into contact with the first region ; o a semiconductor peripheral portion , made of a semiconductor material doped with the second conductivity type, intended to be electrically biased, and surrounding the detection portion in the main plane and coming into contact with the second region ; o characterized in that it comprises: o a ferroelectric peripheral portion (26.1), made of a ferroelectric material, • located between and in contact with the intermediate region and the dielectric layer , and • located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane. o a detection portion , made of a semiconductor material, comprising: • a first region doped with a first conductivity type and flush with the first surface , and intended to be electrically biased; • a second region doped with a second conductivity type opposite the first type, and flush with the second surface ; • an intermediate region , located between the first region and the second region ; • a first region doped with a first conductivity type and flush with the first surface , and intended to be electrically biased; • a second region doped with a second conductivity type opposite the first type, and flush with the second surface ; • an intermediate region , located between the first region and the second region ; o a dielectric layer , covering the detection portion on the first surface while coming into contact with the first region ; o a semiconductor peripheral portion , made of a semiconductor material doped with the second conductivity type, intended to be electrically biased, and surrounding the detection portion in the main plane and coming into contact with the second region ; o characterized in that it comprises: o a ferroelectric peripheral portion (26.1), made of a ferroelectric material, • located between and in contact with the intermediate region and the dielectric layer , and • located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane. o a ferroelectric peripheral portion (26.1), made of a ferroelectric material, • located between and in contact with the intermediate region and the dielectric layer , and • located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane. • located between and in contact with the intermediate region and the dielectric layer , and • located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane. <EOS>