A light emitting device comprising: - a substrate ; - a laminated structure provided to the substrate, and including a plurality of columnar parts , wherein each columnar part includes a first semiconductor layer , a second semiconductor layer having different conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and has same conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part , an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, a diametrical size (B) in a bottom of the recessed part is smaller than a diametrical size (T) in the opening of the recessed part, - an electrode disposed at an opposite side to the substrate side of the laminated structure, wherein a through hole penetrating the electrode is disposed at a position of the electrode overlapping the recessed part when viewed from a stacking direction of the laminated structure. - a substrate ; - a laminated structure provided to the substrate, and including a plurality of columnar parts , wherein each columnar part includes a first semiconductor layer , a second semiconductor layer having different conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and has same conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part , an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, a diametrical size (B) in a bottom of the recessed part is smaller than a diametrical size (T) in the opening of the recessed part, each columnar part includes a first semiconductor layer , a second semiconductor layer having different conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, a first semiconductor layer , a second semiconductor layer having different conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and has same conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part , an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, a diametrical size (B) in a bottom of the recessed part is smaller than a diametrical size (T) in the opening of the recessed part, - an electrode disposed at an opposite side to the substrate side of the laminated structure, wherein a through hole penetrating the electrode is disposed at a position of the electrode overlapping the recessed part when viewed from a stacking direction of the laminated structure. <EOS>