A solar cell module comprising: a plurality of solar cells (C1, C2), each solar cell (C1, C2) including a semiconductor substrate ; a plurality of emitter regions formed on a rear surface of the semiconductor substrate ; a plurality of back surface field regions formed on the rear surface of the semiconductor substrate ; a plurality of first electrodes (C141) each connected to a emitter region of the plurality of emitter regions and each extending in a first direction; a plurality of second electrodes (C142) each connected to a back surface field region of the plurality of back surface field regions and each extending in the first direction; a plurality of first conductive lines (CW1) each connected to the plurality of first electrodes (C141) and each extending in a second direction crossing to the first direction; a plurality of second conductive lines (CW2) each connected to the plurality of second electrodes (C142) and each extending in the second direction; a plurality of conductive adhesives (CA) each formed at a crossing area between the plurality of first conductive lines (CW1) and the plurality of first electrodes (C141), and between the plurality of second conductive lines (CW2) and the plurality of second electrodes (C142); and a plurality of insulating layers (IL) formed at a crossing area between the plurality of first conductive lines (CW1) and the plurality of second electrodes (C142), and between the plurality of second conductive lines (CW2) and the plurality of first electrodes (C141), characterized in that a separation space is positioned between the plurality of first conductive lines (CW1) and the plurality of insulating layers (IL) or between the plurality of second conductive lines (CW2) and the plurality of insulating layers (IL). a plurality of solar cells (C1, C2), each solar cell (C1, C2) including a semiconductor substrate ; a plurality of emitter regions formed on a rear surface of the semiconductor substrate ; a plurality of back surface field regions formed on the rear surface of the semiconductor substrate ; a plurality of first electrodes (C141) each connected to a emitter region of the plurality of emitter regions and each extending in a first direction; a plurality of second electrodes (C142) each connected to a back surface field region of the plurality of back surface field regions and each extending in the first direction; a plurality of first conductive lines (CW1) each connected to the plurality of first electrodes (C141) and each extending in a second direction crossing to the first direction; a plurality of second conductive lines (CW2) each connected to the plurality of second electrodes (C142) and each extending in the second direction; a plurality of conductive adhesives (CA) each formed at a crossing area between the plurality of first conductive lines (CW1) and the plurality of first electrodes (C141), and between the plurality of second conductive lines (CW2) and the plurality of second electrodes (C142); and a plurality of insulating layers (IL) formed at a crossing area between the plurality of first conductive lines (CW1) and the plurality of second electrodes (C142), and between the plurality of second conductive lines (CW2) and the plurality of first electrodes (C141), characterized in that a separation space is positioned between the plurality of first conductive lines (CW1) and the plurality of insulating layers (IL) or between the plurality of second conductive lines (CW2) and the plurality of insulating layers (IL). <EOS>