A solar cell , comprising: a semiconductor substrate having first and second surfaces; a conductive region comprising a first conductivity type region and a second conductivity type region formed on the first surface of the semiconductor substrate ; a tunneling layer formed on a surface of the conductive region between the first surface of the semiconductor substrate and the conductive region; an electrode comprising a first electrode and a second electrode , wherein the first electrode is connected to the first conductivity type region and the second electrode is connected to the second conductivity type region ; and a passivation layer formed on a surface of the conductive region opposite to the surface on which the tunneling layer is formed, wherein the passivation layer comprises: a first layer formed on the conductive region and comprising silicon nitride; and a second layer formed on the first layer and comprising silicon carbide, wherein the electrode comprises: an electrically conductive adhesive layer in contact with the conductive region, wherein the electrically conductive adhesive layer is formed of a metal layer; an electrode layer formed on the adhesive layer ; and a ribbon-connected layer formed on the electrode layer , wherein at least a part of the electrode layer has a width smaller than a width of the adhesive layer and the ribbon-connected layer . a semiconductor substrate having first and second surfaces; a conductive region comprising a first conductivity type region and a second conductivity type region formed on the first surface of the semiconductor substrate ; a tunneling layer formed on a surface of the conductive region between the first surface of the semiconductor substrate and the conductive region; an electrode comprising a first electrode and a second electrode , wherein the first electrode is connected to the first conductivity type region and the second electrode is connected to the second conductivity type region ; and a passivation layer formed on a surface of the conductive region opposite to the surface on which the tunneling layer is formed, wherein the passivation layer comprises: a first layer formed on the conductive region and comprising silicon nitride; and a second layer formed on the first layer and comprising silicon carbide, wherein the electrode comprises: an electrically conductive adhesive layer in contact with the conductive region, wherein the electrically conductive adhesive layer is formed of a metal layer; an electrode layer formed on the adhesive layer ; and a ribbon-connected layer formed on the electrode layer , wherein at least a part of the electrode layer has a width smaller than a width of the adhesive layer and the ribbon-connected layer . a first layer formed on the conductive region and comprising silicon nitride; and a second layer formed on the first layer and comprising silicon carbide, wherein the electrode comprises: an electrically conductive adhesive layer in contact with the conductive region, wherein the electrically conductive adhesive layer is formed of a metal layer; an electrode layer formed on the adhesive layer ; and a ribbon-connected layer formed on the electrode layer , wherein at least a part of the electrode layer has a width smaller than a width of the adhesive layer and the ribbon-connected layer . an electrically conductive adhesive layer in contact with the conductive region, wherein the electrically conductive adhesive layer is formed of a metal layer; an electrode layer formed on the adhesive layer ; and a ribbon-connected layer formed on the electrode layer , wherein at least a part of the electrode layer has a width smaller than a width of the adhesive layer and the ribbon-connected layer . <EOS>