A Time-of-Flight, ToF, sensor , comprising: a plurality of photo-sensitive sensor pixels (110-1, 110-2) each comprising at least two charge storages (111-1, 111-2, 112-1, 112-2) and a drain terminal (113-1, 113-2); and a common charge storage coupled to the respective drain terminal (113-1, 113-2) of at least a first subset of the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein the first subset comprises two or more of the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein the common charge storage comprises one or more capacitor or potential well formed in a semiconductor material of the common charge storage , wherein the common charge storage is an element separate from the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein, for at least one of a plurality of first ToF measurements, the photo-sensitive sensor pixels of at least the first subset are configured to: via the respective drain terminal (113-1, 113-2), drain part of charge carriers generated in the respective photo-sensitive sensor pixel during the at least one of the plurality of first ToF measurements by incident light caused by one or more object outside a target measurement range of the ToF sensor; and selectively store another part of the charge carriers in the at least two charge storages (111-1, 111-2, 112-1, 112-2) of the respective photo-sensitive sensor pixel, wherein the common charge storage is configured to accumulate electrical energy conveyed by currents (114-1, 114-2) output by the coupled drain terminals (113-1, 113-2) and output first data indicative of the accumulated electrical energy. a plurality of photo-sensitive sensor pixels (110-1, 110-2) each comprising at least two charge storages (111-1, 111-2, 112-1, 112-2) and a drain terminal (113-1, 113-2); and a common charge storage coupled to the respective drain terminal (113-1, 113-2) of at least a first subset of the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein the first subset comprises two or more of the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein the common charge storage comprises one or more capacitor or potential well formed in a semiconductor material of the common charge storage , wherein the common charge storage is an element separate from the plurality of photo-sensitive sensor pixels (110-1, 110-2), wherein, for at least one of a plurality of first ToF measurements, the photo-sensitive sensor pixels of at least the first subset are configured to: via the respective drain terminal (113-1, 113-2), drain part of charge carriers generated in the respective photo-sensitive sensor pixel during the at least one of the plurality of first ToF measurements by incident light caused by one or more object outside a target measurement range of the ToF sensor; and selectively store another part of the charge carriers in the at least two charge storages (111-1, 111-2, 112-1, 112-2) of the respective photo-sensitive sensor pixel, via the respective drain terminal (113-1, 113-2), drain part of charge carriers generated in the respective photo-sensitive sensor pixel during the at least one of the plurality of first ToF measurements by incident light caused by one or more object outside a target measurement range of the ToF sensor; and selectively store another part of the charge carriers in the at least two charge storages (111-1, 111-2, 112-1, 112-2) of the respective photo-sensitive sensor pixel, wherein the common charge storage is configured to accumulate electrical energy conveyed by currents (114-1, 114-2) output by the coupled drain terminals (113-1, 113-2) and output first data indicative of the accumulated electrical energy. <EOS>