A method for defect detection in a singulated semiconductor device , the method comprising: Illuminating, using at least one light source , a first side face (3 2 ) of the singulated semiconductor device with an illumination light , wherein the illumination light is directed to the first side face (3 2 ) of the singulated semiconductor device such that the illumination light travels through the singulated semiconductor device and exits the singulated semiconductor device at a second side face (3 4 ) of the singulated semiconductor device which is opposite the first side face (3 2 ), wherein the light exits from the second side face (3 4 ) of the singulated semiconductor device as a diffuse ray of light, wherein the illumination light is directed to the first side face (3 2 ) of the semiconductor device along an axis which is perpendicular to the first side face (3 2 ); imaging the light which exits from second side face (3 4 ) of the singulated semiconductor device on a detector of a camera with a lens , wherein the camera looks with its lens directly at the second side face (3 4 ) of the singulated semiconductor device ; wherein each of the side faces (3 1 , 3 2 , 3 3 , 3 4 ) of the singulated semiconductor device are diced edges; and wherein when reaching an interior defect or a side crack of the singulated semiconductor device a part of the diffuse ray is blocked by the interior defect or the side crack leading to a defective part in the camera image; carrying out a relative movement of a stage , which holds the singulated semiconductor device and the camera , such that the second side face (3 2 ) of the singulated semiconductor device is imaged completely by the camera ; and wherein the step of carrying out a relative movement of the stage further comprises: rotating the stage and in parallel carrying out a movement of the stage in the X/Y -plane, such that a focus point of the camera is kept during the rotational movement of the stage on a respective side face . Illuminating, using at least one light source , a first side face (3 2 ) of the singulated semiconductor device with an illumination light , wherein the illumination light is directed to the first side face (3 2 ) of the singulated semiconductor device such that the illumination light travels through the singulated semiconductor device and exits the singulated semiconductor device at a second side face (3 4 ) of the singulated semiconductor device which is opposite the first side face (3 2 ), wherein the light exits from the second side face (3 4 ) of the singulated semiconductor device as a diffuse ray of light, wherein the illumination light is directed to the first side face (3 2 ) of the semiconductor device along an axis which is perpendicular to the first side face (3 2 ); imaging the light which exits from second side face (3 4 ) of the singulated semiconductor device on a detector of a camera with a lens , wherein the camera looks with its lens directly at the second side face (3 4 ) of the singulated semiconductor device ; wherein each of the side faces (3 1 , 3 2 , 3 3 , 3 4 ) of the singulated semiconductor device are diced edges; and wherein when reaching an interior defect or a side crack of the singulated semiconductor device a part of the diffuse ray is blocked by the interior defect or the side crack leading to a defective part in the camera image; carrying out a relative movement of a stage , which holds the singulated semiconductor device and the camera , such that the second side face (3 2 ) of the singulated semiconductor device is imaged completely by the camera ; and wherein the step of carrying out a relative movement of the stage further comprises: rotating the stage and in parallel carrying out a movement of the stage in the X/Y -plane, such that a focus point of the camera is kept during the rotational movement of the stage on a respective side face . <EOS>