A power semiconductor module arrangement comprising: at least one semiconductor substrate comprising a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer ; at least one semiconductor body arranged on the first metallization layer ; at least one end stop element , wherein each end stop element is arranged either on the semiconductor substrate or on one of the at least one semiconductor body and extends from the semiconductor substrate or the respective semiconductor body in a vertical direction (y) that is perpendicular to a top surface of the semiconductor substrate ; a housing at least partly enclosing the semiconductor substrate , the housing comprising sidewalls and a cover ; and a casting compound covering the semiconductor substrate and partly filling the housing, wherein the housing further comprises at least one press-on pin , each of the at least one press-on pin extending from the cover of the housing towards one of the at least one end stop element , and exerting a pressure on the respective end stop element in the vertical direction (y) towards the semiconductor substrate or the respective semiconductor body the casting compound has a thickness (h5) in the vertical direction (y), the end stop element has a height (h48) in the vertical direction (y) that is greater than the thickness (h5) of the casting compound such that a top surface of the end stop element that faces away from the semiconductor substrate or the semiconductor body is not covered by the casting compound , and the at least one end stop element comprises a frame that encloses a hollow space or cavity, wherein the casting compound surrounds the frame and at least partly fills the hollow space or cavity. at least one semiconductor substrate comprising a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer ; at least one semiconductor body arranged on the first metallization layer ; at least one end stop element , wherein each end stop element is arranged either on the semiconductor substrate or on one of the at least one semiconductor body and extends from the semiconductor substrate or the respective semiconductor body in a vertical direction (y) that is perpendicular to a top surface of the semiconductor substrate ; a housing at least partly enclosing the semiconductor substrate , the housing comprising sidewalls and a cover ; and a casting compound covering the semiconductor substrate and partly filling the housing, wherein the housing further comprises at least one press-on pin , each of the at least one press-on pin extending from the cover of the housing towards one of the at least one end stop element , and exerting a pressure on the respective end stop element in the vertical direction (y) towards the semiconductor substrate or the respective semiconductor body the casting compound has a thickness (h5) in the vertical direction (y), the end stop element has a height (h48) in the vertical direction (y) that is greater than the thickness (h5) of the casting compound such that a top surface of the end stop element that faces away from the semiconductor substrate or the semiconductor body is not covered by the casting compound , and the at least one end stop element comprises a frame that encloses a hollow space or cavity, wherein the casting compound surrounds the frame and at least partly fills the hollow space or cavity. <EOS>