A method comprising: placing a substrate on a first curved surface of a first bending tool , wherein the substrate comprises a dielectric insulation layer , a first metallization layer and a second metallization layer , wherein the dielectric insulation layer is disposed between the first and second metallization layers , and wherein the substrate is placed on the first curved surface such that the second metallization layer faces the first curved surface ; arranging at least one semiconductor body on the first metallization layer of the substrate , with a contact layer arranged between each of the at least one semiconductor body and the first metallization layer ; using a second bending tool with a second surface to apply a first pressure to the substrate and to the at least one semiconductor body arranged thereon, thereby pressing the at least one semiconductor body onto the substrate and the substrate onto the first curved surface , thereby sintering the at least one semiconductor body to the first metallization layer of the substrate and pre-bending the substrate with the at least one semiconductor body mounted thereon; removing the pre-bended substrate from the first bending tool ; and after removing the pre-bended substrate from the first bending tool ; mounting the pre-bended substrate to a bended base plate or heat sink, wherein mounting the pre-bended substrate to a bended base plate or heat sink comprises: forming a first connection layer on the bended base plate or heat sink; and arranging the pre-bended substrate with the at least one semiconductor body mounted thereon on the first connection layer and joining the substrate to the base plate or heat sink using a soldering process. placing a substrate on a first curved surface of a first bending tool , wherein the substrate comprises a dielectric insulation layer , a first metallization layer and a second metallization layer , wherein the dielectric insulation layer is disposed between the first and second metallization layers , and wherein the substrate is placed on the first curved surface such that the second metallization layer faces the first curved surface ; arranging at least one semiconductor body on the first metallization layer of the substrate , with a contact layer arranged between each of the at least one semiconductor body and the first metallization layer ; using a second bending tool with a second surface to apply a first pressure to the substrate and to the at least one semiconductor body arranged thereon, thereby pressing the at least one semiconductor body onto the substrate and the substrate onto the first curved surface , thereby sintering the at least one semiconductor body to the first metallization layer of the substrate and pre-bending the substrate with the at least one semiconductor body mounted thereon; removing the pre-bended substrate from the first bending tool ; and after removing the pre-bended substrate from the first bending tool ; mounting the pre-bended substrate to a bended base plate or heat sink, wherein mounting the pre-bended substrate to a bended base plate or heat sink comprises: forming a first connection layer on the bended base plate or heat sink; and arranging the pre-bended substrate with the at least one semiconductor body mounted thereon on the first connection layer and joining the substrate to the base plate or heat sink using a soldering process. <EOS>