A plasma processing apparatus comprising: a process chamber configured to accommodate a target substrate (W) and to be vacuum-exhausted; a first electrode and a second electrode disposed opposite each other within the process chamber, the first electrode being an upper electrode, and the second electrode being a lower electrode and configured to support the target substrate; a first RF power application unit configured to apply a first RF power to the second electrode; a second RF power application unit configured to apply a second RF power to the second electrode, the second RF power having a frequency lower than that of the first RF power; a process gas supply unit configured to supply a process gas into the process chamber, wherein plasma of the process gas is generated inside the process container and used to perform a plasma process on the substrate, and a DC power supply configured to apply a DC voltage to the first electrode, characterized in that the DC power supply is configured such that any one of application voltage, application current, and application power to the first electrode is variable, and the apparatus further comprises: a control unit configured to control any one of application voltage, application current, and application power from the DC power supply to the first electrode and to control whether the DC voltage is to be applied or not, from the DC power supply to the first electrode; and a conductive member regularly grounded is disposed within the process chamber to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, wherein the conductive member is disposed around the second electrode or near the first electrode. a process chamber configured to accommodate a target substrate (W) and to be vacuum-exhausted; a first electrode and a second electrode disposed opposite each other within the process chamber, the first electrode being an upper electrode, and the second electrode being a lower electrode and configured to support the target substrate; a first RF power application unit configured to apply a first RF power to the second electrode; a second RF power application unit configured to apply a second RF power to the second electrode, the second RF power having a frequency lower than that of the first RF power; a process gas supply unit configured to supply a process gas into the process chamber, wherein plasma of the process gas is generated inside the process container and used to perform a plasma process on the substrate, and a DC power supply configured to apply a DC voltage to the first electrode, characterized in that the DC power supply is configured such that any one of application voltage, application current, and application power to the first electrode is variable, and the apparatus further comprises: a control unit configured to control any one of application voltage, application current, and application power from the DC power supply to the first electrode and to control whether the DC voltage is to be applied or not, from the DC power supply to the first electrode; and a conductive member regularly grounded is disposed within the process chamber to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, wherein the conductive member is disposed around the second electrode or near the first electrode. a control unit configured to control any one of application voltage, application current, and application power from the DC power supply to the first electrode and to control whether the DC voltage is to be applied or not, from the DC power supply to the first electrode; and a conductive member regularly grounded is disposed within the process chamber to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, wherein the conductive member is disposed around the second electrode or near the first electrode. <EOS>