A light emitting device comprising a flip chip light emitting diode, the flip chip light emitting diode comprising: a light-transmissive substrate comprising a patterned surface including at least one of (a) a plurality of recessed features or (b) a plurality of raised features; a plurality of semiconductor layers adjacent to the patterned surface , the plurality of semiconductor layers including a first semiconductor layer comprising doping of a first type and a second semiconductor layer comprising doping of a second type, wherein a light emitting active region is arranged between the first semiconductor layer and the second semiconductor layer ; a multi-layer reflector arranged proximate to the plurality of semiconductor layers, the multi-layer reflector comprising a metal reflector layer and a dielectric reflector layer , wherein the dielectric reflector layer is arranged between the metal reflector layer and the plurality of semiconductor layers; a passivation layer arranged between the metal reflector layer and (i) a first electrical contact and (ii) a second electrical contact , wherein the first electrical contact is arranged in conductive electrical communication with the first semiconductor layer , and the second electrical contact is arranged in conductive electrical communication with the second semiconductor layer ; and an adhesion layer between the metal reflector layer and the dielectric reflector layer ; wherein the plurality of semiconductor layers forms a mesa , a peripheral portion of the plurality of semiconductor layers forms at least one recess laterally bounding the mesa , the multi-layer reflector is arranged over at least 90% of a major surface of the mesa and is arranged between the mesa and the passivation layer , and the at least one recess comprises a peripheral portion of the dielectric reflector layer that bounds peripheral portions of the second semiconductor layer , the light emitting active region , and a segment of the first semiconductor layer . a light-transmissive substrate comprising a patterned surface including at least one of (a) a plurality of recessed features or (b) a plurality of raised features; a plurality of semiconductor layers adjacent to the patterned surface , the plurality of semiconductor layers including a first semiconductor layer comprising doping of a first type and a second semiconductor layer comprising doping of a second type, wherein a light emitting active region is arranged between the first semiconductor layer and the second semiconductor layer ; a multi-layer reflector arranged proximate to the plurality of semiconductor layers, the multi-layer reflector comprising a metal reflector layer and a dielectric reflector layer , wherein the dielectric reflector layer is arranged between the metal reflector layer and the plurality of semiconductor layers; a passivation layer arranged between the metal reflector layer and (i) a first electrical contact and (ii) a second electrical contact , wherein the first electrical contact is arranged in conductive electrical communication with the first semiconductor layer , and the second electrical contact is arranged in conductive electrical communication with the second semiconductor layer ; and an adhesion layer between the metal reflector layer and the dielectric reflector layer ; wherein the plurality of semiconductor layers forms a mesa , a peripheral portion of the plurality of semiconductor layers forms at least one recess laterally bounding the mesa , the multi-layer reflector is arranged over at least 90% of a major surface of the mesa and is arranged between the mesa and the passivation layer , and the at least one recess comprises a peripheral portion of the dielectric reflector layer that bounds peripheral portions of the second semiconductor layer , the light emitting active region , and a segment of the first semiconductor layer . <EOS>