A layered substrate comprising a silicon single crystal substrate and a wurtzite group-III nitride single crystal layer, wherein when: an axis orthogonal to a normal line on a surface of the silicon single crystal substrate and overlapping a <11-2> axis of the silicon single crystal when observed from the direction of the normal line is a y-axis; an axis orthogonal to the normal line and the y-axis and configuring three orthogonal axes is an x-axis; a plane including the normal line and the y-axis is an ny-plane; a plane including the normal line and the x-axis is an nx-plane; an axis wherein a <111> axis of the silicon single crystal is projected onto the ny-plane is a <111> ny axis; an axis wherein the <111> axis is projected onto the nx-plane is a <111>nx axis; an axis wherein a <0001> axis of the group-III nitride single crystal is projected onto the ny-plane is a <0001>ny axis; an axis wherein the <0001> axis is projected onto the nx-plane is a <0001>nx axis; a rotation angle measured in the ny-plane from the normal line to the <111>ny axis is θx0; a rotation angle measured in the nx-plane from the normal line to the <111>nx axis is θy0; a rotation angle measured in the ny-plane from the normal line to the <0001>ny axis is θx1; and a rotation angle measured in the nx-plane from the normal line to the <0001>nx axis is θy1, an absolute value of θx0 > an absolute value of θy0, and an absolute value of θx1 > an absolute value of θy1, when the ny-plane is viewed in cross-section, the <111> axis of the silicon single crystal and the <0001> axis of the group-III nitride single crystal are inclined in the same direction with respect to the normal line, characterized in that a SiOx layer, a layer of crystalline oxide other than SiOx, and the group-III nitride single crystal layer are stacked in sequence on the silicon single crystal substrate, and x<2. an axis orthogonal to a normal line on a surface of the silicon single crystal substrate and overlapping a <11-2> axis of the silicon single crystal when observed from the direction of the normal line is a y-axis; an axis orthogonal to the normal line and the y-axis and configuring three orthogonal axes is an x-axis; a plane including the normal line and the y-axis is an ny-plane; a plane including the normal line and the x-axis is an nx-plane; an axis wherein a <111> axis of the silicon single crystal is projected onto the ny-plane is a <111> ny axis; an axis wherein the <111> axis is projected onto the nx-plane is a <111>nx axis; an axis wherein a <0001> axis of the group-III nitride single crystal is projected onto the ny-plane is a <0001>ny axis; an axis wherein the <0001> axis is projected onto the nx-plane is a <0001>nx axis; a rotation angle measured in the ny-plane from the normal line to the <111>ny axis is θx0; a rotation angle measured in the nx-plane from the normal line to the <111>nx axis is θy0; a rotation angle measured in the ny-plane from the normal line to the <0001>ny axis is θx1; and a rotation angle measured in the nx-plane from the normal line to the <0001>nx axis is θy1, an absolute value of θx0 > an absolute value of θy0, and an absolute value of θx1 > an absolute value of θy1, when the ny-plane is viewed in cross-section, the <111> axis of the silicon single crystal and the <0001> axis of the group-III nitride single crystal are inclined in the same direction with respect to the normal line, characterized in that a SiOx layer, a layer of crystalline oxide other than SiOx, and the group-III nitride single crystal layer are stacked in sequence on the silicon single crystal substrate, and x<2. <EOS>