Method for casting electronic components or component groups, in which - the component or the component group is embedded in a casting compound , which is cured via at least one crosslinking process, wherein - a casting compound is used, which contains at least one crosslinking component A, which is homogeneously distributed in the casting compound and can crosslink to form at least two different networks, of which a first network is formed by the at least one crosslinking component A alone, wherein an at least partial crosslinking to form the first network can be triggered by a first event in at least a first region of the casting compound , - contains at least one second component B, which is homogeneously distributed in the casting compound and with which the at least one crosslinking component A can form a second of the at least two different networks, which has a lower crosslink density than the first network , wherein the crosslinking to form the second network can be triggered by a second event in at least one second region of the casting compound , in which the first network has not been formed, has only been partially formed, and - contains at least one third component C, which is homogeneously distributed in the casting compound and, after the at least partial crosslinking to form the first network , reacts with not yet crosslinked components of the at least one second component B in the first and second region to form a further network, wherein the reaction of the third component C with the second component B is triggered by the second event, and - the at least one crosslinking component A of the casting compound is at least partially cured to form the first network in at least one region kept at a distance from the first electronic component , as a first region , or the electronic component group and is cured to form the second network at least in a region enclosing and directly surrounding the electronic component or the electronic component group, as a second region . - the component or the component group is embedded in a casting compound , which is cured via at least one crosslinking process, - a casting compound is used, which contains at least one crosslinking component A, which is homogeneously distributed in the casting compound and can crosslink to form at least two different networks, of which a first network is formed by the at least one crosslinking component A alone, wherein an at least partial crosslinking to form the first network can be triggered by a first event in at least a first region of the casting compound , - contains at least one second component B, which is homogeneously distributed in the casting compound and with which the at least one crosslinking component A can form a second of the at least two different networks, which has a lower crosslink density than the first network , wherein the crosslinking to form the second network can be triggered by a second event in at least one second region of the casting compound , in which the first network has not been formed, has only been partially formed, and - contains at least one third component C, which is homogeneously distributed in the casting compound and, after the at least partial crosslinking to form the first network , reacts with not yet crosslinked components of the at least one second component B in the first and second region to form a further network, wherein the reaction of the third component C with the second component B is triggered by the second event, and - the at least one crosslinking component A of the casting compound is at least partially cured to form the first network in at least one region kept at a distance from the first electronic component , as a first region , or the electronic component group and is cured to form the second network at least in a region enclosing and directly surrounding the electronic component or the electronic component group, as a second region . <EOS>