A power semiconductor module comprising: a module housing ; a substrate ; a semiconductor chip attached to the substrate and disposed in the module housing ; a dielectric first encapsulation disposed in the module housing , in physical contact with both the semiconductor chip and the substrate and having a first modulus of elasticity; a dielectric second encapsulation disposed in the module housing and having a second modulus of elasticity; wherein the first encapsulation is a silicone rubber and disposed between the substrate and the second encapsulation; the semiconductor chip is disposed between the first encapsulation and the substrate ; the first modulus of elasticity is greater than the second modulus of elasticity; and the power semiconductor module further comprising a bond wire , wherein: the semiconductor chip comprises a first chip metallization ; the bond wire is, at a first bonding location , directly bonded to the first chip metallization ; the bond wire is, at least at the first bonding location , embedded in the first encapsulation ; the substrate comprises a dielectric insulation carrier , and a first substrate metallization layer attached to the insulation carrier ; the semiconductor chip is disposed on the first substrate metallization layer ; the bond wire is, at a second bonding location , directly bonded to the first substrate metallization layer ; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation ; characterized in that the second encapsulation consists of or comprises a silicone foam. a module housing ; a substrate ; a semiconductor chip attached to the substrate and disposed in the module housing ; a dielectric first encapsulation disposed in the module housing , in physical contact with both the semiconductor chip and the substrate and having a first modulus of elasticity; a dielectric second encapsulation disposed in the module housing and having a second modulus of elasticity; wherein the first encapsulation is a silicone rubber and disposed between the substrate and the second encapsulation; the semiconductor chip is disposed between the first encapsulation and the substrate ; the first modulus of elasticity is greater than the second modulus of elasticity; and the power semiconductor module further comprising a bond wire , wherein: the semiconductor chip comprises a first chip metallization ; the bond wire is, at a first bonding location , directly bonded to the first chip metallization ; the bond wire is, at least at the first bonding location , embedded in the first encapsulation ; the substrate comprises a dielectric insulation carrier , and a first substrate metallization layer attached to the insulation carrier ; the semiconductor chip is disposed on the first substrate metallization layer ; the bond wire is, at a second bonding location , directly bonded to the first substrate metallization layer ; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation ; characterized in that the second encapsulation consists of or comprises a silicone foam. the semiconductor chip comprises a first chip metallization ; the bond wire is, at a first bonding location , directly bonded to the first chip metallization ; the bond wire is, at least at the first bonding location , embedded in the first encapsulation ; the substrate comprises a dielectric insulation carrier , and a first substrate metallization layer attached to the insulation carrier ; the semiconductor chip is disposed on the first substrate metallization layer ; the bond wire is, at a second bonding location , directly bonded to the first substrate metallization layer ; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation ; characterized in that the second encapsulation consists of or comprises a silicone foam. <EOS>