High-side gate driver, comprising: first and second current mirrors (Ip1, In1), a first N-channel transistor (Mn1), first and second switch circuits, first and second first-type diodes (d1, d2), and a first second-type diode (d3), and wherein the first switch circuit is arranged between an output end of the first current mirror (Ip1) and a source of the first N-channel transistor (Mn1) such that when the first switch circuit is conducting, the first current mirror (Ip1) charges a gate pin connected to the source of the first N-channel transistor (Mn1), the second switch circuit is arranged between a drain of the first N-channel transistor (Mn1) and an input end of the second current mirror (In1) such that when the second switch circuit is conducting, the second current mirror (In1) discharges the gate pin, an anode and a cathode of the first first-type diode (d1) are arranged to be connected to the source of the first N-channel transistor (Mn1) and a cathode of the second first-type diode (d2) respectively, an anode of the second first-type diode (d2) is arranged to be connected to an output end of the second current mirror (In1), an anode and a cathode of the first second-type diode (d3) are arranged to be connected to ground and the cathode of the second first-type diode (d2) respectively, an input end of the first current mirror (Ip1), the source of the first N-channel transistor (Mn1) and the output end of the second current mirror (In1) are connected to a voltage pin, the gate pin and a source pin of the high-side gate driver respectively, and the first N-channel transistor (Mn1), the second switch circuit and the second current mirror (In1) have a structure electrically isolated from a substrate, characterized in that the driver further comprises: a voltage-limiting circuit arranged between the output end of the second current mirror (In1) and ground. the first switch circuit is arranged between an output end of the first current mirror (Ip1) and a source of the first N-channel transistor (Mn1) such that when the first switch circuit is conducting, the first current mirror (Ip1) charges a gate pin connected to the source of the first N-channel transistor (Mn1), the second switch circuit is arranged between a drain of the first N-channel transistor (Mn1) and an input end of the second current mirror (In1) such that when the second switch circuit is conducting, the second current mirror (In1) discharges the gate pin, an anode and a cathode of the first first-type diode (d1) are arranged to be connected to the source of the first N-channel transistor (Mn1) and a cathode of the second first-type diode (d2) respectively, an anode of the second first-type diode (d2) is arranged to be connected to an output end of the second current mirror (In1), an anode and a cathode of the first second-type diode (d3) are arranged to be connected to ground and the cathode of the second first-type diode (d2) respectively, an input end of the first current mirror (Ip1), the source of the first N-channel transistor (Mn1) and the output end of the second current mirror (In1) are connected to a voltage pin, the gate pin and a source pin of the high-side gate driver respectively, and the first N-channel transistor (Mn1), the second switch circuit and the second current mirror (In1) have a structure electrically isolated from a substrate, characterized in that the driver further comprises: a voltage-limiting circuit arranged between the output end of the second current mirror (In1) and ground. <EOS>