A quantum information processing circuit comprising: a dielectric substrate ; and a lumped-element device on the dielectric substrate , the lumped-element device comprising: a first capacitor pad on the dielectric substrate , the first capacitor pad being capacitively coupled to a second capacitor pad , the first capacitor pad having an outer boundary and an inner boundary , the inner boundary defining an interior clearance area in the first capacitor pad , the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad , the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad ; and an inductive transmission line on the dielectric substrate , residing in the interior clearance area in, and being surrounded by, the first capacitor pad , wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad ; wherein the first capacitor pad is a closed conductive surface surrounding the meander inductor except for an opening through which a second end of the inductive transmission line extends to connect to the second capacitor pad. a dielectric substrate ; and a lumped-element device on the dielectric substrate , the lumped-element device comprising: a first capacitor pad on the dielectric substrate , the first capacitor pad being capacitively coupled to a second capacitor pad , the first capacitor pad having an outer boundary and an inner boundary , the inner boundary defining an interior clearance area in the first capacitor pad , the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad , the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad ; and an inductive transmission line on the dielectric substrate , residing in the interior clearance area in, and being surrounded by, the first capacitor pad , wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad ; a first capacitor pad on the dielectric substrate , the first capacitor pad being capacitively coupled to a second capacitor pad , the first capacitor pad having an outer boundary and an inner boundary , the inner boundary defining an interior clearance area in the first capacitor pad , the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad , the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad ; and an inductive transmission line on the dielectric substrate , residing in the interior clearance area in, and being surrounded by, the first capacitor pad , wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad ; wherein the first capacitor pad is a closed conductive surface surrounding the meander inductor except for an opening through which a second end of the inductive transmission line extends to connect to the second capacitor pad. <EOS>