A light emitting device comprising: a light emitting structure including a first conductivity type semiconductor layer , an active layer and a second conductivity type semiconductor layer ; a passivation layer surrounding a side of the light emitting structure; a first electrode disposed on the first conductivity type semiconductor layer ; a current blocking layer (CBL, 130) disposed under the second conductivity type semiconductor layer ; an ohmic layer forming transparent electrode disposed under the second conductivity type semiconductor layer , the transparent electrode directly contacting the second conductivity type semiconductor layer and surrounding side surfaces and under surface of the CBL ; a reflective electrode disposed under the second conductivity type semiconductor layer , the reflective electrode directly contacting the second conductivity type semiconductor layer , and surrounding side surfaces and under surface of the transparent electrode; a channel layer made of a metal disposed under the light emitting structure and surrounding side surfaces and under surface of the reflective electrode ; and a support substrate connected to the channel layer through an adhesive layer , wherein the current blocking layer faces the first electrode , an upper surface of the current blocking layer is disposed on the same line as a lower surface of the second conductivity type semiconductor layer , the channel layer separates the passivation layer from the reflective electrode , the passivation layer directly contacts the channel ayer at the outer surface of the light emitting structure , and the channel layer directly contacts the reflective electrode . a light emitting structure including a first conductivity type semiconductor layer , an active layer and a second conductivity type semiconductor layer ; a passivation layer surrounding a side of the light emitting structure; a first electrode disposed on the first conductivity type semiconductor layer ; a current blocking layer (CBL, 130) disposed under the second conductivity type semiconductor layer ; an ohmic layer forming transparent electrode disposed under the second conductivity type semiconductor layer , the transparent electrode directly contacting the second conductivity type semiconductor layer and surrounding side surfaces and under surface of the CBL ; a reflective electrode disposed under the second conductivity type semiconductor layer , the reflective electrode directly contacting the second conductivity type semiconductor layer , and surrounding side surfaces and under surface of the transparent electrode; a channel layer made of a metal disposed under the light emitting structure and surrounding side surfaces and under surface of the reflective electrode ; and a support substrate connected to the channel layer through an adhesive layer , wherein the current blocking layer faces the first electrode , an upper surface of the current blocking layer is disposed on the same line as a lower surface of the second conductivity type semiconductor layer , the channel layer separates the passivation layer from the reflective electrode , the passivation layer directly contacts the channel ayer at the outer surface of the light emitting structure , and the channel layer directly contacts the reflective electrode . <EOS>