A method for manufacturing a thin-film transistor, comprising: forming an active layer using low temperature poly-silicon (LTPS), wherein the active layer comprises a first doping region and a second doping region ;; forming a first etch stopper and a second etch stopper respectively over the first doping region and the second doping region , thicknesses of the first etch stopper and the second etch stopper each being between 200 Å and 400 Å ; forming a second layer over the active layer and the at least one etch stopper ; forming at least one contact via in the second layer, such that a bottom opening of each contact via contacts with a top surface of one etch stopper ; and forming at least one electrode in the at least one contact via , such that each electrode extends in one contact via respectively, and is in contact with, and electrically coupled with, the one etch stopper ; wherein: the at least one etch stopper comprises a composition capable of blocking etching to the active layer during formation of the at least one contact via in the second layer; and whose oxidization product is removable by a solution, the composition comprising molybdenum; wherein, each electrode is formed into an N-layer structure, where N is an integer greater than 1; neighboring layers of each electrode are made of different compositions ; a contact layer of each electrode, in contact with and electrically coupled to, one etch stopper , is made of a same composition as the one etch stopper , and where forming the active layer using low temperature poly-silicon (LTPS) further comprises: performing injective excitation on the active layer to improve the lattice state of the low temperature poly-silicon in the active layer to thereby improve the conductivity of the active layer . forming an active layer using low temperature poly-silicon (LTPS), wherein the active layer comprises a first doping region and a second doping region ;; forming a first etch stopper and a second etch stopper respectively over the first doping region and the second doping region , thicknesses of the first etch stopper and the second etch stopper each being between 200 Å and 400 Å ; forming a second layer over the active layer and the at least one etch stopper ; forming at least one contact via in the second layer, such that a bottom opening of each contact via contacts with a top surface of one etch stopper ; and forming at least one electrode in the at least one contact via , such that each electrode extends in one contact via respectively, and is in contact with, and electrically coupled with, the one etch stopper ; wherein: the at least one etch stopper comprises a composition capable of blocking etching to the active layer during formation of the at least one contact via in the second layer; and whose oxidization product is removable by a solution, the composition comprising molybdenum; wherein, each electrode is formed into an N-layer structure, where N is an integer greater than 1; neighboring layers of each electrode are made of different compositions ; a contact layer of each electrode, in contact with and electrically coupled to, one etch stopper , is made of a same composition as the one etch stopper , and where forming the active layer using low temperature poly-silicon (LTPS) further comprises: performing injective excitation on the active layer to improve the lattice state of the low temperature poly-silicon in the active layer to thereby improve the conductivity of the active layer . <EOS>