An avalanche photodiode comprising: a semi-insulating substrate ; a first mesa comprising a first laminate constitution in which a p-type electrode layer , a p-type light absorbing layer , a light absorbing layer with a low impurity concentration, a band gap inclined layer , a p-type electric field control layer , an avalanche multiplier layer , an n-type electric field control layer , and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate ; a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa ; and a depletion control region that is provided in layers on the second mesa side of the p-type electric field control layer of the first mesa , formed in an encircling portion provided inside the first mesa , the encircling portion extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, and prevents an encircling portion of the p-type electric field control layer from being depleted when bias is applied, the encircling portion of the p-type electric field control layer extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, wherein the depletion control region is formed by inactivating a donor in an encircling portion of the n-type electric field control layer , the encircling portion of the n-type electric field control layer extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction. a semi-insulating substrate ; a first mesa comprising a first laminate constitution in which a p-type electrode layer , a p-type light absorbing layer , a light absorbing layer with a low impurity concentration, a band gap inclined layer , a p-type electric field control layer , an avalanche multiplier layer , an n-type electric field control layer , and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate ; a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa ; and a depletion control region that is provided in layers on the second mesa side of the p-type electric field control layer of the first mesa , formed in an encircling portion provided inside the first mesa , the encircling portion extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, and prevents an encircling portion of the p-type electric field control layer from being depleted when bias is applied, the encircling portion of the p-type electric field control layer extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, wherein the depletion control region is formed by inactivating a donor in an encircling portion of the n-type electric field control layer , the encircling portion of the n-type electric field control layer extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction. <EOS>