A plasma display device comprising: a plasma display panel (PDP); and an electromagnetic interference (EMI) filter provided at a front portion of the plasma display panel, the EMI filter including an EMI coating supported by a glass substrate , the EMI coating including layers moving away from the glass substrate including: a first high index layer having a refractive index (n) of at least about 2.2; a first silicon-inclusive layer ; a first layer comprising zinc oxide ; a first EMI shielding layer comprising silver contacting the first layer comprising zinc oxide ; a first layer comprising an oxide of Ni and/or Cr contacting the first EMI shielding layer comprising silver; a first metal oxide layer ; a second silicon-inclusive layer ; a second layer comprising zinc oxide ; a second EMI shielding layer comprising silver contacting the second layer comprising zinc oxide ; a second layer comprising an oxide of Ni and/or Cr contacting the second EMI shielding layer comprising silver; a second metal oxide layer ; a third silicon-inclusive layer ; a third layer comprising zinc oxide ; a third EMI shielding layer comprising silver contacting the third layer comprising zinc oxide ; a third layer comprising an oxide of Ni and/or Cr contacting the third EMI shielding layer comprising silver; and a third metal oxide layer ; a fourth silicon-inclusive layer ; a fourth layer comprising zinc oxide ; a fourth EMI shielding layer comprising silver contacting the third layer comprising zinc oxide ; a fourth layer comprising an oxide of Ni and/or Cr contacting the fourth EMI shielding layer comprising silver, wherein the EMI filter has a sheet resistance of greater than about 1.2 ohms, and wherein thicknesses of both the first and fourth EMI shielding layers are less than thicknesses of the second and third EMI shielding layers. a first high index layer having a refractive index (n) of at least about 2.2; a first silicon-inclusive layer ; a first layer comprising zinc oxide ; a first EMI shielding layer comprising silver contacting the first layer comprising zinc oxide ; a first layer comprising an oxide of Ni and/or Cr contacting the first EMI shielding layer comprising silver; a first metal oxide layer ; a second silicon-inclusive layer ; a second layer comprising zinc oxide ; a second EMI shielding layer comprising silver contacting the second layer comprising zinc oxide ; a second layer comprising an oxide of Ni and/or Cr contacting the second EMI shielding layer comprising silver; a second metal oxide layer ; a third silicon-inclusive layer ; a third layer comprising zinc oxide ; a third EMI shielding layer comprising silver contacting the third layer comprising zinc oxide ; a third layer comprising an oxide of Ni and/or Cr contacting the third EMI shielding layer comprising silver; and a third metal oxide layer ; a fourth silicon-inclusive layer ; a fourth layer comprising zinc oxide ; a fourth EMI shielding layer comprising silver contacting the third layer comprising zinc oxide ; a fourth layer comprising an oxide of Ni and/or Cr contacting the fourth EMI shielding layer comprising silver, wherein the EMI filter has a sheet resistance of greater than about 1.2 ohms, and wherein thicknesses of both the first and fourth EMI shielding layers are less than thicknesses of the second and third EMI shielding layers. <EOS>