A thermal bonding sheet, comprising a precursor layer that is to become a sintered layer by heating, the precursor layer having an average thickness of 5 μm to 200 μm, wherein the average thickness is determined using the following method: a sheet of 1 cm × 10 cm was attached on the backside of a backside metal (Ti/Ag) silicon wafer (10 cm × 10 cm); using a confocal microscope, noncontact measurement under the following condition was conducted for the back surface of the silicon wafer on which the sheet is attached, and height was determined: <Noncontact measurement condition> Objective lens: 10-fold Scan time: 60 seconds Resolving power: 0.03 μm; by subtracting the silicon wafer height h2 from sheet height h1, sheet thickness Ts (= h1 - h2) was determined; an area of 1 cm × 10 cm was equally divided in 10 areas, and measurement was conducted at a center point of each area of 1 cm × 1 cm, totally at 10 points; an average of the 10 points was determined as an average thickness; wherein the precursor layer contains a thermally decomposable binder that is solid at 23°C, wherein the thermally decomposable binder is an acryl resin or a polycarbonate; wherein the precursor layer contains a low-boiling-point binder which is liquid at 23°C, wherein the low-boiling-point binder is selected from the group consisting of monohydric alcohols, polyhydric alcohols, ethers, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate, and combinations thereof; and wherein the precursor layer contains from 60 to 98% by weight of metallic fine particles selected from the group consisting of silver, copper, silver oxide and copper oxide, wherein the metallic fine particles have an average particle size of from 0.0005 to 30 μm, determined by observing using a scanning electron microscope; the precursor layer having a maximum thickness and a minimum thickness falling within a range of ±20% of the average thickness. a sheet of 1 cm × 10 cm was attached on the backside of a backside metal (Ti/Ag) silicon wafer (10 cm × 10 cm); using a confocal microscope, noncontact measurement under the following condition was conducted for the back surface of the silicon wafer on which the sheet is attached, and height was determined: <Noncontact measurement condition> Objective lens: 10-fold Scan time: 60 seconds Resolving power: 0.03 μm; by subtracting the silicon wafer height h2 from sheet height h1, sheet thickness Ts (= h1 - h2) was determined; an area of 1 cm × 10 cm was equally divided in 10 areas, and measurement was conducted at a center point of each area of 1 cm × 1 cm, totally at 10 points; an average of the 10 points was determined as an average thickness; wherein the precursor layer contains a thermally decomposable binder that is solid at 23°C, wherein the thermally decomposable binder is an acryl resin or a polycarbonate; wherein the precursor layer contains a low-boiling-point binder which is liquid at 23°C, wherein the low-boiling-point binder is selected from the group consisting of monohydric alcohols, polyhydric alcohols, ethers, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate, and combinations thereof; and wherein the precursor layer contains from 60 to 98% by weight of metallic fine particles selected from the group consisting of silver, copper, silver oxide and copper oxide, wherein the metallic fine particles have an average particle size of from 0.0005 to 30 μm, determined by observing using a scanning electron microscope; the precursor layer having a maximum thickness and a minimum thickness falling within a range of ±20% of the average thickness. <EOS>