A semiconductor device, comprising: a semiconductor body comprising a first surface , a second surface opposite to the first surface in a vertical direction (y), an active region , and a sensor region arranged adjacent to the active region in a first horizontal direction (x); a plurality of transistor cells (30 1 , 30 2 ) at least partly integrated in the active region , each transistor cell (30 1 , 30 2 ) comprising a source region , a body region , a drift region separated from the source region by the body region , and a gate electrode dielectrically insulated from the body region ; at least one sensor cell (30 S ) at least partly integrated in the sensor region , each of the at least one sensor cell (30 S ) comprising a source region , a body region , a drift region separated from the source region by the body region , and a gate electrode dielectrically insulated from the body region ; a plurality of first contact plugs (42 1 ); an intermediate layer ; and a second contact plug , wherein the source regions of the plurality of transistor cells (30 1 , 30 2 ) are coupled to a first source electrode , and the source regions of the at least one sensor cell (30 S ) are coupled to a second source electrode separate and distant from the first source electrode , at least one of the plurality of transistor cells (30 1 , 30 2 ) directly adjoins one of the at least one sensor cells , each of the plurality of first contact plugs (42 1 ) extends between one of the source regions of the at least one sensor cell (30 S ) and the intermediate layer , and provides an electrical connection between the respective source region and the intermediate layer , and the second contact plug extends between the intermediate layer and the second source electrode , and provides an electrical connection between the intermediate layer and the second source electrode . a semiconductor body comprising a first surface , a second surface opposite to the first surface in a vertical direction (y), an active region , and a sensor region arranged adjacent to the active region in a first horizontal direction (x); a plurality of transistor cells (30 1 , 30 2 ) at least partly integrated in the active region , each transistor cell (30 1 , 30 2 ) comprising a source region , a body region , a drift region separated from the source region by the body region , and a gate electrode dielectrically insulated from the body region ; at least one sensor cell (30 S ) at least partly integrated in the sensor region , each of the at least one sensor cell (30 S ) comprising a source region , a body region , a drift region separated from the source region by the body region , and a gate electrode dielectrically insulated from the body region ; a plurality of first contact plugs (42 1 ); an intermediate layer ; and a second contact plug , wherein the source regions of the plurality of transistor cells (30 1 , 30 2 ) are coupled to a first source electrode , and the source regions of the at least one sensor cell (30 S ) are coupled to a second source electrode separate and distant from the first source electrode , at least one of the plurality of transistor cells (30 1 , 30 2 ) directly adjoins one of the at least one sensor cells , each of the plurality of first contact plugs (42 1 ) extends between one of the source regions of the at least one sensor cell (30 S ) and the intermediate layer , and provides an electrical connection between the respective source region and the intermediate layer , and the second contact plug extends between the intermediate layer and the second source electrode , and provides an electrical connection between the intermediate layer and the second source electrode . <EOS>