A circular memory device, comprising: a plurality of bottom electrodes comprising a plurality of bottom electrode contact pads and a plurality of bottom electrode extended members , wherein: each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members ; each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the memory device; and a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline; a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members , wherein: each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members ; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members . each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members ; each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the memory device; and a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline; a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members , wherein: each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members ; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members . each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members ; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members . <EOS>