A current sensor device (200; 300; 400) for measuring an electrical current (I), the current sensor device comprising: - a substrate (210; 310; 410) mounted at a predefined position with respect to an electrical conductor (213, 313; 413) and comprising or connected to a first magnetic sensor (211; 311; 411) and a second magnetic sensor (212; 312; 412); - wherein the electrical conductor has a symmetry plane (Ω) along a major axis of the electrical conductor, the symmetry plane oriented substantially perpendicular to the substrate; - wherein the first magnetic sensor is located at a first location spaced (Δx) from the symmetry plane (Ω), and has a first axis of maximum sensitivity, and is configured for providing a first value (v1) indicative of a first magnetic field component induced by the current (I) to be measured at said first location; - wherein the second magnetic sensor has a second axis of maximum sensitivity parallel to the first axis and to said symmetry plane (Ω); and wherein the second magnetic sensor is located at a second location situated in the symmetry plane (Ω), and is configured for providing a second value (v2) indicative of an external disturbance field, if present. - a processing circuit (610; 710) connected to the first magnetic sensor (111; 211; 311; 431) for obtaining the first value (v1), and connected to the second magnetic sensor (112; 212; 312; 432) for obtaining the second value (v2), and adapted for determining the current (I) to be measured at least based on a difference between the first value (v1) and the second value (v2); characterised in that the substrate is a semiconductor substrate; the second magnetic sensor is located on a same side of the semiconductor substrate as the first magneticsensor. - a substrate (210; 310; 410) mounted at a predefined position with respect to an electrical conductor (213, 313; 413) and comprising or connected to a first magnetic sensor (211; 311; 411) and a second magnetic sensor (212; 312; 412); - wherein the electrical conductor has a symmetry plane (Ω) along a major axis of the electrical conductor, the symmetry plane oriented substantially perpendicular to the substrate; - wherein the first magnetic sensor is located at a first location spaced (Δx) from the symmetry plane (Ω), and has a first axis of maximum sensitivity, and is configured for providing a first value (v1) indicative of a first magnetic field component induced by the current (I) to be measured at said first location; - wherein the second magnetic sensor has a second axis of maximum sensitivity parallel to the first axis and to said symmetry plane (Ω); and wherein the second magnetic sensor is located at a second location situated in the symmetry plane (Ω), and is configured for providing a second value (v2) indicative of an external disturbance field, if present. - a processing circuit (610; 710) connected to the first magnetic sensor (111; 211; 311; 431) for obtaining the first value (v1), and connected to the second magnetic sensor (112; 212; 312; 432) for obtaining the second value (v2), and adapted for determining the current (I) to be measured at least based on a difference between the first value (v1) and the second value (v2); the substrate is a semiconductor substrate; the second magnetic sensor is located on a same side of the semiconductor substrate as the first magneticsensor. <EOS>