Three-phase switching module (2h; 2l) including three identical switching cells (3h-1, 3h-2, 3h-3; 3l-1, 3l-2, 3l-3), each including a first switch (M) and a second switch (D; M) electrically in series between a first terminal common to the three cells and a second terminal specific to each cell, the module including a substrate: a first level of which includes: three reception first conductive areas (71h-1, 71h-2, 71h-3; 71l-1, 711-2, 71l-3) of a back conduction terminal of the first switch (M) and of a back conduction terminal of the second switch (D, M) of each cell; and three second conductive areas (72h-1, 72h-2, 72h-3; 74l-1, 74l-2, 74l-3) for receiving wires of connection to a front conduction terminal of said first switch (M); and three third conductive areas (74h-1, 74h-2, 74-3) for receiving wires of connection to a front conduction terminal of said second switch (D, M); and at least one second level of which includes: three first conductive areas (81h-1, 81h-2, 81h-3; 811-1, 81l-2, 81l-3) respectively connected to the third conductive areas (72h-1, 72h-2, 72h-3) of the first level by vias (73h-1, 73h-2, 73h-3) said three first conductive areas (81h 1, 81h 2, 81h 3; 81l 1, 81l 2, 811 3) being intended to be coupled to respective second terminals of the cells of the module; and at least one second conductive area (82h; 82l) connected to the three third conductive areas (74h-1, 74h-2, 74h-3; 74-3) of the first level by vias (75h-1, 75h-2, 75h-3), said second area (82h; 82l) being intended to be coupled with the first terminal of the module, the conductive areas of the different levels respecting a symmetry of revolution of order 3. three reception first conductive areas (71h-1, 71h-2, 71h-3; 71l-1, 711-2, 71l-3) of a back conduction terminal of the first switch (M) and of a back conduction terminal of the second switch (D, M) of each cell; and three second conductive areas (72h-1, 72h-2, 72h-3; 74l-1, 74l-2, 74l-3) for receiving wires of connection to a front conduction terminal of said first switch (M); and three third conductive areas (74h-1, 74h-2, 74-3) for receiving wires of connection to a front conduction terminal of said second switch (D, M); and at least one second level of which includes: three first conductive areas (81h-1, 81h-2, 81h-3; 811-1, 81l-2, 81l-3) respectively connected to the third conductive areas (72h-1, 72h-2, 72h-3) of the first level by vias (73h-1, 73h-2, 73h-3) said three first conductive areas (81h 1, 81h 2, 81h 3; 81l 1, 81l 2, 811 3) being intended to be coupled to respective second terminals of the cells of the module; and at least one second conductive area (82h; 82l) connected to the three third conductive areas (74h-1, 74h-2, 74h-3; 74-3) of the first level by vias (75h-1, 75h-2, 75h-3), said second area (82h; 82l) being intended to be coupled with the first terminal of the module, the conductive areas of the different levels respecting a symmetry of revolution of order 3. three first conductive areas (81h-1, 81h-2, 81h-3; 811-1, 81l-2, 81l-3) respectively connected to the third conductive areas (72h-1, 72h-2, 72h-3) of the first level by vias (73h-1, 73h-2, 73h-3) said three first conductive areas (81h 1, 81h 2, 81h 3; 81l 1, 81l 2, 811 3) being intended to be coupled to respective second terminals of the cells of the module; and at least one second conductive area (82h; 82l) connected to the three third conductive areas (74h-1, 74h-2, 74h-3; 74-3) of the first level by vias (75h-1, 75h-2, 75h-3), said second area (82h; 82l) being intended to be coupled with the first terminal of the module, the conductive areas of the different levels respecting a symmetry of revolution of order 3. <EOS>