A method of making an electronic device, comprising: obtaining a glass article , the glass article comprising: a glass carrier having a carrier bonding surface ; a sheet having a sheet bonding surface , wherein the sheet has a thickness of ≤ 300 microns; a surface modification layer disposed on one of the carrier bonding surface and the sheet bonding surface , wherein the surface modification layer has a thickness of from 0.1 to 100 nm, and wherein the surface modification layer comprises one of: a) a plasma polymerized fluoropolymer; and b) an aromatic silane; the carrier bonding surface being bonded with the sheet bonding surface with the surface modification layer therebetween, wherein the surface energy bonding the sheet to the carrier is of such a character that after subjecting the article to a temperature cycle by heating in nitrogen in an chamber cycled from room temperature to 600°C at a rate of 9.2 °C per minute, held at a temperature of 600°C for 10 minutes, and then cooled at 1 °C per minute to 300 °C, and then removing the article from the chamber and allowing the article to cool to room temperature, , the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, there is no outgassing from the surface modification layer during the temperature cycle, and the sheet may be separated from the carrier without breaking the thinner one of the carrier and the sheet into two or more pieces; disposing an electronic-device component onto the sheet that is bonded to the carrier via the surface modification layer, wherein disposing the electronic device includes processing at a temperature ≥ 400°C. obtaining a glass article , the glass article comprising: a glass carrier having a carrier bonding surface ; a sheet having a sheet bonding surface , wherein the sheet has a thickness of ≤ 300 microns; a glass carrier having a carrier bonding surface ; a sheet having a sheet bonding surface , wherein the sheet has a thickness of ≤ 300 microns; a surface modification layer disposed on one of the carrier bonding surface and the sheet bonding surface , wherein the surface modification layer has a thickness of from 0.1 to 100 nm, and wherein the surface modification layer comprises one of: a) a plasma polymerized fluoropolymer; and b) an aromatic silane; the carrier bonding surface being bonded with the sheet bonding surface with the surface modification layer therebetween, wherein the surface energy bonding the sheet to the carrier is of such a character that after subjecting the article to a temperature cycle by heating in nitrogen in an chamber cycled from room temperature to 600°C at a rate of 9.2 °C per minute, held at a temperature of 600°C for 10 minutes, and then cooled at 1 °C per minute to 300 °C, and then removing the article from the chamber and allowing the article to cool to room temperature, , a) a plasma polymerized fluoropolymer; and b) an aromatic silane; the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, there is no outgassing from the surface modification layer during the temperature cycle, and the sheet may be separated from the carrier without breaking the thinner one of the carrier and the sheet into two or more pieces; disposing an electronic-device component onto the sheet that is bonded to the carrier via the surface modification layer, wherein disposing the electronic device includes processing at a temperature ≥ 400°C. <EOS>