A method comprising: a) providing a substrate comprising copper; b) selectively applying a composition to the copper of the substrate to increase exposed copper grains having crystal plane orientations, wherein the composition consists of water, a crystal plane orientation enrichment compound, wherein the crystal plane orientation enrichment compound is a quaternary amine, optionally a pH adjusting agent comprising acids chosen from inorganic acids, organic acids and bases comprising sodium hydroxide, ammonium hydroxide and mixtures thereof, optionally an oxidizing agent, wherein the oxidizing agent is selected from the group consisting of copper (II) ions, cerium (IV) ions, titanium (IV) ions, iron (III) ions, manganese (IV) ions, manganese (VI) ions, manganese (VII) ions, vanadium (III) ions, vanadium (V) ions, nickel (II) ions, nickel (IV) ions, cobalt (III) ions, silver (I) ions, molybdenum (IV) ions, gold (I) ions, palladium (II) ions, platinum (II) ions, iridium (I) ions, germanium (II) ions, bismuth (III) ions, hydrogen peroxide, monopersulfates, iodates, chlorates, peracetic acid, persulfate, bromates, perbromate, peracetic acid, periodate, halogens, hypochlorites, nitrates, nitric acid, benzoquinone, ferrocene and mixtures thereof; and c) electroplating copper on the copper of the substrate having increased exposed copper grains having crystal plane orientations and field copper of the substrate with a copper electroplating bath, wherein copper electroplated on the copper treated with the composition electroplates at a faster rate than copper electroplated on the field copper, wherein the copper electroplating bath comprises one or more sources of copper ions, a suppressor, and an accelerator, the suppressor having the formula: or wherein a molecular weight ranges from 1000-10000 g/mol and variables x, x', x", x′′′, y, y', y" and y′′′ are integers greater than or equal to 1 to provide the molecular weight range of 1000-10 000 g/mol. a) providing a substrate comprising copper; b) selectively applying a composition to the copper of the substrate to increase exposed copper grains having crystal plane orientations, wherein the composition consists of water, a crystal plane orientation enrichment compound, wherein the crystal plane orientation enrichment compound is a quaternary amine, optionally a pH adjusting agent comprising acids chosen from inorganic acids, organic acids and bases comprising sodium hydroxide, ammonium hydroxide and mixtures thereof, optionally an oxidizing agent, wherein the oxidizing agent is selected from the group consisting of copper (II) ions, cerium (IV) ions, titanium (IV) ions, iron (III) ions, manganese (IV) ions, manganese (VI) ions, manganese (VII) ions, vanadium (III) ions, vanadium (V) ions, nickel (II) ions, nickel (IV) ions, cobalt (III) ions, silver (I) ions, molybdenum (IV) ions, gold (I) ions, palladium (II) ions, platinum (II) ions, iridium (I) ions, germanium (II) ions, bismuth (III) ions, hydrogen peroxide, monopersulfates, iodates, chlorates, peracetic acid, persulfate, bromates, perbromate, peracetic acid, periodate, halogens, hypochlorites, nitrates, nitric acid, benzoquinone, ferrocene and mixtures thereof; and c) electroplating copper on the copper of the substrate having increased exposed copper grains having crystal plane orientations and field copper of the substrate with a copper electroplating bath, wherein copper electroplated on the copper treated with the composition electroplates at a faster rate than copper electroplated on the field copper, wherein the copper electroplating bath comprises one or more sources of copper ions, a suppressor, and an accelerator, the suppressor having the formula: or wherein a molecular weight ranges from 1000-10000 g/mol and variables x, x', x", x′′′, y, y', y" and y′′′ are integers greater than or equal to 1 to provide the molecular weight range of 1000-10 000 g/mol. <EOS>