A method of operating a ferroelectric memory array , comprising: selecting, by a memory controller , a first set of memory cells and a second set of memory cells for a read operation using a word line that is in electronic communication with the first set of memory cells and the second set of memory cells , wherein each memory cell of the first set of memory cells and each memory cell of the second set of memory cells is in electronic communication with a plate line and a respective digit line and comprises a respective ferroelectric capacitor , wherein the digit line for each memory cell of the first set of memory cells and the second set of memory cells is in electronic communication with the plate line via a switching component , and wherein the digit line for each memory cell of the first set of memory cells and the second set of memory cells is configured to be in electronic communication with a virtual ground ; activating a first set of sensing components corresponding to the first set of memory cells for the read operation based at least in part on generating, at the memory controller , a first signal on a first set of control lines , wherein each sensing component of the first set of sensing components is in electronic communication with a respective memory cell of the first set of memory cells via a respective digit line and with the memory controller via a respective control line of the first set of control lines ; and maintaining a second set of sensing components corresponding to the second set of memory cells in a deactivated state during the read operation based at least in part on generating, at the memory controller , a second signal on a second set of control lines , wherein each sensing component of the second set of sensing components is in electronic communication with a respective memory cell of the second set of memory cells via a respective digit line and with the memory controller via a respective control line of the second set of control lines . selecting, by a memory controller , a first set of memory cells and a second set of memory cells for a read operation using a word line that is in electronic communication with the first set of memory cells and the second set of memory cells , wherein each memory cell of the first set of memory cells and each memory cell of the second set of memory cells is in electronic communication with a plate line and a respective digit line and comprises a respective ferroelectric capacitor , wherein the digit line for each memory cell of the first set of memory cells and the second set of memory cells is in electronic communication with the plate line via a switching component , and wherein the digit line for each memory cell of the first set of memory cells and the second set of memory cells is configured to be in electronic communication with a virtual ground ; activating a first set of sensing components corresponding to the first set of memory cells for the read operation based at least in part on generating, at the memory controller , a first signal on a first set of control lines , wherein each sensing component of the first set of sensing components is in electronic communication with a respective memory cell of the first set of memory cells via a respective digit line and with the memory controller via a respective control line of the first set of control lines ; and maintaining a second set of sensing components corresponding to the second set of memory cells in a deactivated state during the read operation based at least in part on generating, at the memory controller , a second signal on a second set of control lines , wherein each sensing component of the second set of sensing components is in electronic communication with a respective memory cell of the second set of memory cells via a respective digit line and with the memory controller via a respective control line of the second set of control lines . <EOS>