A light-emitting diode chip comprising: - a semiconductor body having a plurality of active regions , wherein - at least one of the active regions has at least two subregions (21...28), - the active region has at least one barrier region arranged between two adjacent subregions (21...28) of said at least two subregions (21...28), - the at least two subregions (21...28) emit light of mutually different colour during operation of the light-emitting diode chip, - in at least one of the subregions (21...28) the emission of light is generated electrically, - the barrier region is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21...28), - the active regions have a direction of main extension (R), - at least some of the active regions are spaced apart from each other in a direction (L) which runs lateral with respect to the direction of main extension (R) or at least some of the active regions partly touch each other in the lateral direction, - the active regions are nanostructures and at least one of the active regions has a maximum diameter of 1000 nm and a length in the direction of main extension of at least three times the maximum diameter, - the subregions (21...28) are arranged along the direction of main extension (R) of their active region and at least one barrier region is arranged between each pair of adjacent subregions (21...28), - each subregion (21...28) is based on a nitride compound semiconductor material comprising indium, - each barrier region is based on at least one nitride compound semiconductor material having a greater band gap than the subregions (21...28) adjoining the barrier region , and each subregion (21...28) consists of one quantum well structure, characterized in that the barrier regions are thinner in the direction of main extension (R) than the subregions (21...28) adjoining them. - a semiconductor body having a plurality of active regions , wherein - at least one of the active regions has at least two subregions (21...28), - the active region has at least one barrier region arranged between two adjacent subregions (21...28) of said at least two subregions (21...28), - the at least two subregions (21...28) emit light of mutually different colour during operation of the light-emitting diode chip, - in at least one of the subregions (21...28) the emission of light is generated electrically, - the barrier region is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21...28), - the active regions have a direction of main extension (R), - at least some of the active regions are spaced apart from each other in a direction (L) which runs lateral with respect to the direction of main extension (R) or at least some of the active regions partly touch each other in the lateral direction, - the active regions are nanostructures and at least one of the active regions has a maximum diameter of 1000 nm and a length in the direction of main extension of at least three times the maximum diameter, - the subregions (21...28) are arranged along the direction of main extension (R) of their active region and at least one barrier region is arranged between each pair of adjacent subregions (21...28), - each subregion (21...28) is based on a nitride compound semiconductor material comprising indium, - each barrier region is based on at least one nitride compound semiconductor material having a greater band gap than the subregions (21...28) adjoining the barrier region , and <EOS>