Multispectral detection device comprising: - a first photodetector and a second photodetector each sensitive to a first wavelength range and to a second wavelength range different from the first wavelength range, the first photodetector delivering a first signal representative of the received radiation and the second photodetector delivering a second signal representative of the received radiation, - a first filter configured for to allow the first wavelength range to pass and to block the second wavelength range, the first filter covering the first photodetector and leaving the second photodetector uncovered, the first filter being arranged on the first photodetector so as to block the passage of the second wavelength range in the first photodetector and generate thermomechanical stresses in the first photodetector and in the second photodetector , - a second filter arranged at a distance from the first and second photodetectors and at a distance from the first filter , the second filter being configured to allow the first wavelength range and the second wavelength range to pass, the second filter being configured to block a higher wavelength than the longest of the wavelengths in the first and second wavelength ranges and/or to block a lower wavelength than the shortest of the wavelengths in the first and second wavelength ranges, the first filter and the second filter being arranged successively in the optical path of the first photodetector , the second filter being common to the first photodetector and the second photodetector , the multispectral detection device being characterized in that the first and second wavelength ranges are infrared radiation ranges and in that it comprises: - a continuous passivation layer which monolithically covers the first and second photodetectors and is arranged between the first photodetector and the first filter , the passivation layer having a thickness of between 10nm and 2000nm to smooth thermomechanical stresses on the first and second photodetectors . - a first photodetector and a second photodetector each sensitive to a first wavelength range and to a second wavelength range different from the first wavelength range, the first photodetector delivering a first signal representative of the received radiation and the second photodetector delivering a second signal representative of the received radiation, - a first filter configured for to allow the first wavelength range to pass and to block the second wavelength range, the first filter covering the first photodetector and leaving the second photodetector uncovered, the first filter being arranged on the first photodetector so as to block the passage of the second wavelength range in the first photodetector and generate thermomechanical stresses in the first photodetector and in the second photodetector , - a second filter arranged at a distance from the first and second photodetectors and at a distance from the first filter , the second filter being configured to allow the first wavelength range and the second wavelength range to pass, the second filter being configured to block a higher wavelength than the longest of the wavelengths in the first and second wavelength ranges and/or to block a lower wavelength than the shortest of the wavelengths in the first and second wavelength ranges, the first filter and the second filter being arranged successively in the optical path of the first photodetector , the second filter being common to the first photodetector and the second photodetector , - a continuous passivation layer which monolithically covers the first and second photodetectors and is arranged between the first photodetector and the first filter , the passivation layer having a thickness of between 10nm and 2000nm to smooth thermomechanical stresses on the first and second photodetectors . <EOS>