A method for making subsequent patterns in an underlayer , the method comprising at least one step of making prior patterns in a printable layer topped with the underlayer , wherein making of the prior patterns comprises a nanometric printing of the printable layer and leaves residual thicknesses of printable layer in place in the bottom of the patterns, the printable layer then forming a continuous layer covering the underlayer , the method comprising the following step: at least one step of modifying the underlayer by ion implantation within the underlayer , the implantation being carried out throughout the printable layer comprising the prior patterns and said residual thicknesses , the implantation parameters comprise in particular a direction of implantation and wherein the direction of implantation is perpendicular to a main plane in which the underlayer extends, the implantation parameters being selected so as to form in the underlayer areas modified by the implantation and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that depends on the prior patterns; wherein the step of making prior patterns is carried out so that for each of the prior patterns the residual thickness of the printable layer is smaller than the minimum depth of implantation of the ions implanted during said implantation, the minimum depth being considered according to the direction of implantation and from the surface of the printable layer and wherein the ion implantation is carried out so that the underlayer has a continuous non-modified area located between the modified areas and a face of the underlayer through which the ions penetrate during the implantation , the non-modified area extending over the entire surface of the underlayer , so that all areas modified by the implantation are protected by the non-modified area , these areas modified by the implantation thereby forming areas buried or encapsulated in the material of the adjacent layer . at least one step of modifying the underlayer by ion implantation within the underlayer , the implantation being carried out throughout the printable layer comprising the prior patterns and said residual thicknesses , the implantation parameters comprise in particular a direction of implantation and wherein the direction of implantation is perpendicular to a main plane in which the underlayer extends, the implantation parameters being selected so as to form in the underlayer areas modified by the implantation and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that depends on the prior patterns; wherein the step of making prior patterns is carried out so that for each of the prior patterns the residual thickness of the printable layer is smaller than the minimum depth of implantation of the ions implanted during said implantation, the minimum depth being considered according to the direction of implantation and from the surface of the printable layer and wherein the ion implantation is carried out so that the underlayer has a continuous non-modified area located between the modified areas and a face of the underlayer through which the ions penetrate during the implantation , the non-modified area extending over the entire surface of the underlayer , so that all areas modified by the implantation are protected by the non-modified area , these areas modified by the implantation thereby forming areas buried or encapsulated in the material of the adjacent layer . <EOS>