Method for producing an acoustic wave device comprising transferring a piezoelectric film obtained after a process for adjusting the stress on a final carrier, the process for adjusting the stress state of the piezoelectric film , which has a first stress state at room temperature, comprising: - a step of forming an assembly comprising i. a carrier having a coefficient of thermal expansion; ii. a creep layer arranged on the carrier , the creep layer having a glass transition temperature (Tg) higher than room temperature; iii. the piezoelectric film arranged on the creep layer , the piezoelectric film having a coefficient of thermal expansion which is different from that of the carrier by at least 5%; - a heat treatment step of the assembly , the heat treatment step comprising: i. a first stage of bringing the assembly to a process temperature higher than the glass transition temperature (Tg) of the creep layer so as to at least partially release the stress of the piezoelectric film produced by the difference in thermal expansion of the carrier and the piezoelectric film and so as to place the piezoelectric film in a second stress state; ii. a second stage, following the first phase, of bringing the assembly to room temperature so as to modify the second stress state of the piezoelectric film by the difference in thermal contraction between the carrier and the piezoelectric film and place it in a third stress state, which is different from the first stress state. - a step of forming an assembly comprising i. a carrier having a coefficient of thermal expansion; ii. a creep layer arranged on the carrier , the creep layer having a glass transition temperature (Tg) higher than room temperature; iii. the piezoelectric film arranged on the creep layer , the piezoelectric film having a coefficient of thermal expansion which is different from that of the carrier by at least 5%; i. a carrier having a coefficient of thermal expansion; ii. a creep layer arranged on the carrier , the creep layer having a glass transition temperature (Tg) higher than room temperature; iii. the piezoelectric film arranged on the creep layer , the piezoelectric film having a coefficient of thermal expansion which is different from that of the carrier by at least 5%; - a heat treatment step of the assembly , the heat treatment step comprising: i. a first stage of bringing the assembly to a process temperature higher than the glass transition temperature (Tg) of the creep layer so as to at least partially release the stress of the piezoelectric film produced by the difference in thermal expansion of the carrier and the piezoelectric film and so as to place the piezoelectric film in a second stress state; ii. a second stage, following the first phase, of bringing the assembly to room temperature so as to modify the second stress state of the piezoelectric film by the difference in thermal contraction between the carrier and the piezoelectric film and place it in a third stress state, which is different from the first stress state. i. a first stage of bringing the assembly to a process temperature higher than the glass transition temperature (Tg) of the creep layer so as to at least partially release the stress of the piezoelectric film produced by the difference in thermal expansion of the carrier and the piezoelectric film and so as to place the piezoelectric film in a second stress state; ii. a second stage, following the first phase, of bringing the assembly to room temperature so as to modify the second stress state of the piezoelectric film by the difference in thermal contraction between the carrier and the piezoelectric film and place it in a third stress state, which is different from the first stress state. <EOS>