A light emitting device comprises a first substrate , a pixel isolation structure , a plurality of electroluminescent structures , and a second substrate , said first substrate and said second substrate are oppositely disposed, and said second substrate is disposed on one side of said pixel isolation structure facing away from said first substrate, said pixel isolation structure is disposed on the surface of one side of said first substrate, said pixel isolation structure forms a plurality of mutually isolated sub-pixel regions on the surface of said first substrate, said electroluminescent structures are disposed on a portion of said first substrate corresponding to each said sub-pixel region, wherein said sub-pixel regions further comprise: a quantum dot layer disposed in at least one said sub-pixel region, wherein alternative i) said quantum dot layer in each said sub-pixel region is located on one side of said electroluminescent structures facing away from said first substrate, or alternative ii) said quantum dot layer is located between said electroluminescent structure and said first substrate, said light emitting device further comprises first transparent insulating padding portions separated by the pixel isolation structure, referring to alternative i), said quantum dot layer in each said sub-pixel region is located on one side of said electroluminescent structures, that emit blue light, structure facing away from said first substrate, said first transparent insulating padding portions and said quantum dot layer are disposed in different sub-pixel regions respectively, and said first insulating padding portions are located between said first substrate and said electroluminescent structure, or referring to alternative ii), said quantum dot layer in each said sub-pixel region is located between said electroluminescent structures that emit blue light and said first substrate, said first transparent insulating padding portions are disposed in the sub-pixel region having said quantum dot layer, and said first transparent insulating padding portions are located between said quantum dot layer and said first substrate. a quantum dot layer disposed in at least one said sub-pixel region, wherein alternative i) said quantum dot layer in each said sub-pixel region is located on one side of said electroluminescent structures facing away from said first substrate, or alternative ii) said quantum dot layer is located between said electroluminescent structure and said first substrate, said light emitting device further comprises first transparent insulating padding portions separated by the pixel isolation structure, referring to alternative i), said quantum dot layer in each said sub-pixel region is located on one side of said electroluminescent structures, that emit blue light, structure facing away from said first substrate, said first transparent insulating padding portions and said quantum dot layer are disposed in different sub-pixel regions respectively, and said first insulating padding portions are located between said first substrate and said electroluminescent structure, or referring to alternative ii), said quantum dot layer in each said sub-pixel region is located between said electroluminescent structures that emit blue light and said first substrate, said first transparent insulating padding portions are disposed in the sub-pixel region having said quantum dot layer, and said first transparent insulating padding portions are located between said quantum dot layer and said first substrate. <EOS>