A sensor (100; 200; 300), comprising: a first electrode (110; 210), the first electrode (110; 210) including a reflective layer; a second electrode (120; 220), the second electrode (120; 220) facing the first electrode (110; 210); and a light absorbing layer (130; 230) between the first electrode (110; 210) and the second electrode (120; 220), wherein the light absorbing layer (130; 230) has a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption spectrum having a second absorption peak in a second infrared wavelength region, wherein the second absorption spectrum does not at least partially overlap with the first absorption spectrum, wherein the second infrared wavelength region is a region having a longer wavelength than that of the first infrared wavelength region, wherein the second absorption spectrum has a lower absorption intensity than the first absorption spectrum, and wherein an external quantum efficiency, EQE, spectrum in the second infrared wavelength region is amplified such that: a variance of a local maximum EQE value, EQE max , of the EQE spectrum from a remainder of EQE values of the EQE spectrum in the second infrared wavelength region is greater than a variance of the second absorption peak from a remainder of absorption intensities of the second absorption spectrum in the second infrared wavelength region, and/or a full width at half maximum, FWHM, of the EQE spectrum in the second infrared wavelength region is narrower than a full width at half maximum, FWHM, of the second absorption spectrum in the second infrared wavelength region. a first electrode (110; 210), the first electrode (110; 210) including a reflective layer; a second electrode (120; 220), the second electrode (120; 220) facing the first electrode (110; 210); and a light absorbing layer (130; 230) between the first electrode (110; 210) and the second electrode (120; 220), wherein the light absorbing layer (130; 230) has a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption spectrum having a second absorption peak in a second infrared wavelength region, wherein the second absorption spectrum does not at least partially overlap with the first absorption spectrum, wherein the second infrared wavelength region is a region having a longer wavelength than that of the first infrared wavelength region, wherein the second absorption spectrum has a lower absorption intensity than the first absorption spectrum, and wherein an external quantum efficiency, EQE, spectrum in the second infrared wavelength region is amplified such that: a variance of a local maximum EQE value, EQE max , of the EQE spectrum from a remainder of EQE values of the EQE spectrum in the second infrared wavelength region is greater than a variance of the second absorption peak from a remainder of absorption intensities of the second absorption spectrum in the second infrared wavelength region, and/or a full width at half maximum, FWHM, of the EQE spectrum in the second infrared wavelength region is narrower than a full width at half maximum, FWHM, of the second absorption spectrum in the second infrared wavelength region. <EOS>