A spin current magnetization rotational element comprising: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer , wherein · the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated; · a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer ; characterised in that - the spin conduction layer has a cubic structure and the space group has a symmetry of Pm-3m or Fm-3m, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of the space group Pm-3m - is one of NiAl, RuAl, RhAl, IrAl, or TiNi, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of space group Fm-3m - is one of AlN, TaN, YBi, TiC, or TiN. a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer , wherein · the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated; · a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer ; · the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated; · a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer ; characterised in that - the spin conduction layer has a cubic structure and the space group has a symmetry of Pm-3m or Fm-3m, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of the space group Pm-3m - is one of NiAl, RuAl, RhAl, IrAl, or TiNi, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of space group Fm-3m - is one of AlN, TaN, YBi, TiC, or TiN. - the spin conduction layer has a cubic structure and the space group has a symmetry of Pm-3m or Fm-3m, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of the space group Pm-3m - is one of NiAl, RuAl, RhAl, IrAl, or TiNi, and the spin conduction layer - when the spin conduction layer satisfies the symmetry of space group Fm-3m - is one of AlN, TaN, YBi, TiC, or TiN. <EOS>