A method of preparing a multilayer structure, the method comprising: implanting hydrogen ions, helium ions, or a combination of hydrogen ions and helium ions through a front surface of a monocrystalline semiconductor donor substrate to an average depth D 1 as measured from the front surface toward a central plane, wherein the monocrystalline semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the monocrystalline semiconductor donor substrate and the other of which is a back surface of the monocrystalline semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the monocrystalline semiconductor donor substrate, and the central plane between the front and back surfaces of the monocrystalline semiconductor donor substrate; after the implanting, irradiating the front surface, the back surface, or both the front and the back surfaces of the monocrystalline semiconductor donor substrate with light at an intensity and duration between about 10 seconds and about 5 minutes, whereby the irradiation causes an increase of the temperature of the monocrystalline semiconductor donor substrate to a temperature between about 200°C and about 450°C, thereby forming a cleave plane in the monocrystalline semiconductor donor substrate, wherein the monocrystalline semiconductor donor substrate is rotated during irradiation at a rate between about 5 rotations per minute to about 100 rotations per minute; and after the irradiation, bonding the front surface of the monocrystalline semiconductor donor substrate having the cleave plane therein to a surface of a carrier substrate to thereby form a bonded structure comprising the carrier substrate and the monocrystalline semiconductor donor substrate having the cleave plane. implanting hydrogen ions, helium ions, or a combination of hydrogen ions and helium ions through a front surface of a monocrystalline semiconductor donor substrate to an average depth D 1 as measured from the front surface toward a central plane, wherein the monocrystalline semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the monocrystalline semiconductor donor substrate and the other of which is a back surface of the monocrystalline semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the monocrystalline semiconductor donor substrate, and the central plane between the front and back surfaces of the monocrystalline semiconductor donor substrate; after the implanting, irradiating the front surface, the back surface, or both the front and the back surfaces of the monocrystalline semiconductor donor substrate with light at an intensity and duration between about 10 seconds and about 5 minutes, whereby the irradiation causes an increase of the temperature of the monocrystalline semiconductor donor substrate to a temperature between about 200°C and about 450°C, thereby forming a cleave plane in the monocrystalline semiconductor donor substrate, wherein the monocrystalline semiconductor donor substrate is rotated during irradiation at a rate between about 5 rotations per minute to about 100 rotations per minute; and after the irradiation, bonding the front surface of the monocrystalline semiconductor donor substrate having the cleave plane therein to a surface of a carrier substrate to thereby form a bonded structure comprising the carrier substrate and the monocrystalline semiconductor donor substrate having the cleave plane. <EOS>