A semiconductor light emitting device (1-10) comprising: a semiconductor layer having a first major surface , a second major surface on a side opposite to the first major surface , and a first side surface being in contact with the first major surface and the second major surface , the semiconductor layer including a light emitting layer ; a p-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; an n-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; a fluorescent substance layer provided on the first major surface side, and including a fluorescent substance radiating light different in a wavelength from light emitted from the light emitting layer ; a first insulating film provided between the semiconductor layer and the fluorescent substance layer ; a second insulating film covering the first side surface ; and a reflecting member covering the first side surface via the second insulating film ; characterized in that : the semiconductor light emitting device (1-10) further comprises a transparent layer , made of a transparent resin, provided between the first insulating film and the fluorescent substance layer , and having a third major surface on the semiconductor layer side, a fourth major surface on the fluorescent substance layer side, and a second side surface being in contact with the third major surface , the transparent layer transmitting the light emitted from the light emitting layer ; and a further insulating film between the transparent layer and the fluorescent substance layer , the further insulating film being made of inorganic material, wherein the first insulating film is provided between the semiconductor layer and the transparent layer ; the second insulating film further covers the second side surface ; and the reflecting member further covers at least a portion of the second side surface via the second insulating film . a semiconductor layer having a first major surface , a second major surface on a side opposite to the first major surface , and a first side surface being in contact with the first major surface and the second major surface , the semiconductor layer including a light emitting layer ; a p-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; an n-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; a fluorescent substance layer provided on the first major surface side, and including a fluorescent substance radiating light different in a wavelength from light emitted from the light emitting layer ; a first insulating film provided between the semiconductor layer and the fluorescent substance layer ; a second insulating film covering the first side surface ; and a reflecting member covering the first side surface via the second insulating film ; characterized in that : the semiconductor light emitting device (1-10) further comprises a transparent layer , made of a transparent resin, provided between the first insulating film and the fluorescent substance layer , and having a third major surface on the semiconductor layer side, a fourth major surface on the fluorescent substance layer side, and a second side surface being in contact with the third major surface , the transparent layer transmitting the light emitted from the light emitting layer ; and a further insulating film between the transparent layer and the fluorescent substance layer , the further insulating film being made of inorganic material, wherein the first insulating film is provided between the semiconductor layer and the transparent layer ; the second insulating film further covers the second side surface ; and the reflecting member further covers at least a portion of the second side surface via the second insulating film . <EOS>