An organic light-emitting diode (OLED) display, comprising: a substrate (SUB) configured to have an emission area (AA) and a non-emission area (NA) defined in the substrate (SUB); a thin film transistor (ST, DT) disposed in the non-emission area (NA); a first storage capacitor electrode (SG1) and a second storage capacitor electrode (SG2) configured to be overlapped in the emission area (AA) with a passivation layer (IN2) interposed between the first and second storage capacitor electrodes (SG1, SG2); a color filter (CF) on the second storage capacitor electrode (SG2); an overcoat layer (OC) configured to cover the color filter (CF), the thin film transistor (ST, DT) and the second storage capacitor electrode (SG2); a first pixel area configured to include a first anode electrode (ANO1) and one insulating layer (IN3) sequentially stacked on the overcoat layer (OC) in such a way as to overlap the second storage capacitor electrode (SG2) and a second anode electrode (ANO2) disposed on the insulating layer (IN3) and configured to come in contact with the thin film transistor (ST, DT) and the first anode electrode (ANO1), wherein the first storage capacitor electrode (SG1), the second storage capacitor electrode (SG2), the first anode electrode (ANO1), and the second anode electrode (ANO2) are made of a transparent conductive material, wherein at least two of the first anode electrode (ANO1), the insulating layer (IN3), and the second anode electrode (ANO2) have different refractive indices, and wherein the insulating layer (IN3) covers the entire top surface of the first anode electrode (ANO1) without exposing the top surface of the first anode electrode (ANO1). a substrate (SUB) configured to have an emission area (AA) and a non-emission area (NA) defined in the substrate (SUB); a thin film transistor (ST, DT) disposed in the non-emission area (NA); a first storage capacitor electrode (SG1) and a second storage capacitor electrode (SG2) configured to be overlapped in the emission area (AA) with a passivation layer (IN2) interposed between the first and second storage capacitor electrodes (SG1, SG2); a color filter (CF) on the second storage capacitor electrode (SG2); an overcoat layer (OC) configured to cover the color filter (CF), the thin film transistor (ST, DT) and the second storage capacitor electrode (SG2); a first pixel area configured to include a first anode electrode (ANO1) and one insulating layer (IN3) sequentially stacked on the overcoat layer (OC) in such a way as to overlap the second storage capacitor electrode (SG2) and a second anode electrode (ANO2) disposed on the insulating layer (IN3) and configured to come in contact with the thin film transistor (ST, DT) and the first anode electrode (ANO1), wherein the first storage capacitor electrode (SG1), the second storage capacitor electrode (SG2), the first anode electrode (ANO1), and the second anode electrode (ANO2) are made of a transparent conductive material, wherein at least two of the first anode electrode (ANO1), the insulating layer (IN3), and the second anode electrode (ANO2) have different refractive indices, and wherein the insulating layer (IN3) covers the entire top surface of the first anode electrode (ANO1) without exposing the top surface of the first anode electrode (ANO1). <EOS>