A method of producing a heat discharge structure for a light source device emitting a laser beam, said structure being for fixing said light source device and discharging a heat, said structure comprising: a film of a nitride of a group 13 element, said film comprising a first main face , a second main face and an outer side end face ; and a portion for containing said light source device, said portion comprising a through hole opening at said first main face and said second main face , wherein said through hole contains the light source device and has an inner wall face which is a fixing face for fixing said light source device , said fixing face facing said through hole and being for contacting said light source device , said method comprising: forming a seed crystal film on a film-forming face of a base body ; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films , so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening ; forming films of a nitride of a group 13 element on said seed crystal films , respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening ; and removing said base body . a film of a nitride of a group 13 element, said film comprising a first main face , a second main face and an outer side end face ; and a portion for containing said light source device, said portion comprising a through hole opening at said first main face and said second main face , wherein said through hole contains the light source device and has an inner wall face which is a fixing face for fixing said light source device , said fixing face facing said through hole and being for contacting said light source device , said method comprising: forming a seed crystal film on a film-forming face of a base body ; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films , so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening ; forming films of a nitride of a group 13 element on said seed crystal films , respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening ; and removing said base body . forming a seed crystal film on a film-forming face of a base body ; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films , so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening ; forming films of a nitride of a group 13 element on said seed crystal films , respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening ; and removing said base body . <EOS>