A cleaning method of cleaning a film-forming device , which includes a processing container having a substrate holder provided in the processing container so as to hold a substrate to be processed, and which supplies a SiH 4 and a C 3 H 8 gas as a source gas to the processing container , an interior of which is depressurized, and heats the substrate to be processed so as to perform a film formation on the substrate to be processed, the cleaning method comprising: a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the substrate to be processed, by supplying a fluorine-based cleaning gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container ; characterized by an additional removal process of removing a substance, which remains after the reaction product removal process and is not removed by the residue removal process, by supplying hydrogen gas into the processing container ; and subsequently to the additional removal process, a protective film formation process of forming an SiC protective film on a surface of the substrate holder by supplying the source gas to the processing container , wherein in the reaction product removal process, the substrate holder is selectively heated by induction heating by a coil connected to a high-frequency power supply provided outside the processing container , wherein in the additional removal process, a temperature of the substrate holder is set to be 1,500 degrees C or higher, and wherein in the protective film formation process, a temperature of the substrate holder is set to be 1,600 degrees C to 1,700 degrees C. a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the substrate to be processed, by supplying a fluorine-based cleaning gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container ; characterized by an additional removal process of removing a substance, which remains after the reaction product removal process and is not removed by the residue removal process, by supplying hydrogen gas into the processing container ; and subsequently to the additional removal process, a protective film formation process of forming an SiC protective film on a surface of the substrate holder by supplying the source gas to the processing container , wherein in the reaction product removal process, the substrate holder is selectively heated by induction heating by a coil connected to a high-frequency power supply provided outside the processing container , wherein in the additional removal process, a temperature of the substrate holder is set to be 1,500 degrees C or higher, and wherein in the protective film formation process, a temperature of the substrate holder is set to be 1,600 degrees C to 1,700 degrees C. <EOS>