An integrated device package base comprising: an encapsulation portion comprising: an encapsulation layer ; a bridge , at least partially embedded in the encapsulation layer , configured to provide a first electrical path for a first signal between a first die and a second die ; and a first via , in the encapsulation layer , coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die ; and a redistribution portion coupled to the encapsulation portion , the redistribution portion comprising: at least one dielectric layer ; and at least one interconnect , in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate ; a dielectric layer ; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, traversing at least the substrate , the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. an encapsulation portion comprising: an encapsulation layer ; a bridge , at least partially embedded in the encapsulation layer , configured to provide a first electrical path for a first signal between a first die and a second die ; and a first via , in the encapsulation layer , coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die ; and an encapsulation layer ; a bridge , at least partially embedded in the encapsulation layer , configured to provide a first electrical path for a first signal between a first die and a second die ; and a first via , in the encapsulation layer , coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die ; and a redistribution portion coupled to the encapsulation portion , the redistribution portion comprising: at least one dielectric layer ; and at least one interconnect , in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate ; a dielectric layer ; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, traversing at least the substrate , the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. at least one dielectric layer ; and at least one interconnect , in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate ; a dielectric layer ; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, traversing at least the substrate , the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. a substrate ; a dielectric layer ; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, traversing at least the substrate , the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. <EOS>