A refresh address counting circuit for a DRAM, comprising: a self-oscillating clock generation module , configured to generate a self-oscillating clock signal based on at least one bank activation signal in each of refresh cycles, upon acquiring a refresh signal; a self-oscillating mask module configured to generate a mask signal under a preset refresh command; and a refresh address counting module configured to count refresh addresses based on the self-oscillating clock signal and the mask signal and to output a self-oscillating refresh address; characterized in that the preset refresh command comprises a same-bank refresh command, an all-bank refresh command, or a self-refresh command, wherein the mask signal comprises: a mask sub-signal for masking the self-oscillating clock signal, and a non-mask sub-signal for not masking the self-oscillating clock signal, and wherein the self-oscillating mask module comprises an all-bank refresh mask submodule and a same-bank refresh mask submodule , and wherein the all-bank refresh mask submodule is configured to: in response to reception of the all-bank refresh command in a normal refresh mode, generate the mask sub-signal in a normal refresh mode when a lowest bit of a current refresh address is an odd number; and the same-bank refresh mask submodule is configured to: in response to reception of the same-bank refresh command, generate the mask sub-signal before all banks are refreshed. a self-oscillating clock generation module , configured to generate a self-oscillating clock signal based on at least one bank activation signal in each of refresh cycles, upon acquiring a refresh signal; a self-oscillating mask module configured to generate a mask signal under a preset refresh command; and a refresh address counting module configured to count refresh addresses based on the self-oscillating clock signal and the mask signal and to output a self-oscillating refresh address; characterized in that the preset refresh command comprises a same-bank refresh command, an all-bank refresh command, or a self-refresh command, wherein the mask signal comprises: a mask sub-signal for masking the self-oscillating clock signal, and a non-mask sub-signal for not masking the self-oscillating clock signal, and wherein the self-oscillating mask module comprises an all-bank refresh mask submodule and a same-bank refresh mask submodule , and wherein the all-bank refresh mask submodule is configured to: in response to reception of the all-bank refresh command in a normal refresh mode, generate the mask sub-signal in a normal refresh mode when a lowest bit of a current refresh address is an odd number; and the same-bank refresh mask submodule is configured to: in response to reception of the same-bank refresh command, generate the mask sub-signal before all banks are refreshed. the all-bank refresh mask submodule is configured to: in response to reception of the all-bank refresh command in a normal refresh mode, generate the mask sub-signal in a normal refresh mode when a lowest bit of a current refresh address is an odd number; and the same-bank refresh mask submodule is configured to: in response to reception of the same-bank refresh command, generate the mask sub-signal before all banks are refreshed. <EOS>