A photovoltaic cell, comprising: a silicon substrate ; a first passivation layer and a first anti-reflection layer sequentially disposed on a front surface of the silicon substrate in a direction away from the substrate; and a second passivation layer , at least one silicon oxynitride layer , and at least one silicon nitride layer that are sequentially disposed on a rear surface of the silicon substrate in a direction away from the silicon substrate , wherein a ratio of a number of silicon atoms to a number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4, and a refractive index of the at least one silicon nitride layer is in a range of 1.9 to 2.5; wherein the second passivation layer comprises at least one aluminum oxide layer , wherein a ratio of a number of oxygen atoms to a number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6, a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm, and a refractive index of the at least one aluminum oxide layer is in a range of 1.4 to 1.6; wherein a number of silicon atoms is greater than a number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than a number of nitrogen atoms in the at least one silicon oxynitride layer , a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm, and a refractive index of the at least one silicon oxynitride layer is in a range of 1.5 to 1.8; wherein a thickness of the at least one silicon nitride layer is in a range of 50 nm to 100 nm; wherein the second passivation layer further comprises a silicon oxide layer , and the silicon oxide layer is disposed between the silicon substrate and the at least one aluminum oxide layer , and a thickness of the silicon oxide layer is in a range of 0.1 nm to 5 nm. a silicon substrate ; a first passivation layer and a first anti-reflection layer sequentially disposed on a front surface of the silicon substrate in a direction away from the substrate; and a second passivation layer , at least one silicon oxynitride layer , and at least one silicon nitride layer that are sequentially disposed on a rear surface of the silicon substrate in a direction away from the silicon substrate , wherein a ratio of a number of silicon atoms to a number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4, and a refractive index of the at least one silicon nitride layer is in a range of 1.9 to 2.5; wherein the second passivation layer comprises at least one aluminum oxide layer , wherein a ratio of a number of oxygen atoms to a number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6, a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm, and a refractive index of the at least one aluminum oxide layer is in a range of 1.4 to 1.6; wherein a number of silicon atoms is greater than a number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than a number of nitrogen atoms in the at least one silicon oxynitride layer , a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm, and a refractive index of the at least one silicon oxynitride layer is in a range of 1.5 to 1.8; wherein a thickness of the at least one silicon nitride layer is in a range of 50 nm to 100 nm; wherein the second passivation layer further comprises a silicon oxide layer , and the silicon oxide layer is disposed between the silicon substrate and the at least one aluminum oxide layer , and a thickness of the silicon oxide layer is in a range of 0.1 nm to 5 nm. <EOS>