A method for producing a semiconductor device comprising: a step of setting a rated voltage, V rate ; a step of setting a rated current density, J F ; a step of performing proton implantation from one main surface of a semiconductor substrate ; a step of heating the entire semiconductor substrate at a high temperature to form a hydrogen-induced donor using the proton implantation , thereby forming an n-type field stop layer in the semiconductor substrate ; and a step of heating a portion of the semiconductor substrate corresponding to the range of the implanted protons from the one main surface to reduce a disorder generated in a proton passage region , thereby forming an n-type disorder reduction region , to form the plurality of n-type intermediate layers , wherein a minimum value of a carrier mobility in the plurality of the disorder reduction regions is equal to or more than 20% of the carrier mobility in a crystal state, wherein the depth of a position where carrier concentration is the maximum in the field stop layer which is adjacent to a p-type base layer , with an n-type drift layer interposed therebetween, from the one main surface is more than 15 μm, and wherein, when q is an elementary charge, N d is the average concentration of the drift layer , ε s is the permittivity of the semiconductor substrate , V rate is the rated voltage, J F is the rated current density, and V sat is a saturated velocity in which a carrier speed is saturated with predetermined electric field intensity, a distance index L is represented by the following Expression : and when the depth of the position where the carrier concentration is the maximum in the field stop layer which is adjacent to the base layer , with the drift layer interposed therebetween, from the one main surface is X and the thickness of the semiconductor substrate is W0, X = W0-γL is established and γ is in the range of 0.9 to 1.2. a step of setting a rated voltage, V rate ; a step of setting a rated current density, J F ; a step of performing proton implantation from one main surface of a semiconductor substrate ; a step of heating the entire semiconductor substrate at a high temperature to form a hydrogen-induced donor using the proton implantation , thereby forming an n-type field stop layer in the semiconductor substrate ; and a step of heating a portion of the semiconductor substrate corresponding to the range of the implanted protons from the one main surface to reduce a disorder generated in a proton passage region , thereby forming an n-type disorder reduction region , to form the plurality of n-type intermediate layers , wherein a minimum value of a carrier mobility in the plurality of the disorder reduction regions is equal to or more than 20% of the carrier mobility in a crystal state, wherein the depth of a position where carrier concentration is the maximum in the field stop layer which is adjacent to a p-type base layer , with an n-type drift layer interposed therebetween, from the one main surface is more than 15 μm, and wherein, when q is an elementary charge, N d is the average concentration of the drift layer , ε s is the permittivity of the semiconductor substrate , V rate is the rated voltage, J F is the rated current density, and V sat is a saturated velocity in which a carrier speed is saturated with predetermined electric field intensity, a distance index L is represented by the following Expression : and when the depth of the position where the carrier concentration is the maximum in the field stop layer which is adjacent to the base layer , with the drift layer interposed therebetween, from the one main surface is X and the thickness of the semiconductor substrate is W0, X = W0-γL is established and γ is in the range of 0.9 to 1.2. <EOS>