A solar cell, comprising: a substrate having a front surface and a rear surface opposite to each other and including a base region and an emitter ; a passivation stack disposed on the front surface , wherein the passivation stack includes an oxygen-containing dielectric layer , a first passivation layer , and a second passivation layer that are sequentially disposed in a direction away from the front surface , the oxygen-containing dielectric layer includes a metal oxide material, the first passivation layer includes a silicon nitride material, the second passivation layer includes a silicon oxynitride material, the first passivation layer and the second passivation layer both have hydrogen ions, and the hydrogen ions that are introduced in the first passivation layer pass through the oxygen-containing dielectric layer and effectively saturate suspension bonds on the front surface through migration; and a tunneling oxide layer and a doped conductive layer that are sequentially disposed on the rear surface in a direction away from the rear surface , wherein the doped conductive layer and the substrate have doping elements of a same conductivity type; wherein the first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer , the oxygen-containing dielectric layer covers the emitter , the second passivation layer includes a third interface opposite to the second interface , a nitrogen content at the second interface is higher than that at the first interface and the third interface , respectively, a silicon content at the second interface is higher than that at the first interface and the third interface , respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface , respectively. a substrate having a front surface and a rear surface opposite to each other and including a base region and an emitter ; a passivation stack disposed on the front surface , wherein the passivation stack includes an oxygen-containing dielectric layer , a first passivation layer , and a second passivation layer that are sequentially disposed in a direction away from the front surface , the oxygen-containing dielectric layer includes a metal oxide material, the first passivation layer includes a silicon nitride material, the second passivation layer includes a silicon oxynitride material, the first passivation layer and the second passivation layer both have hydrogen ions, and the hydrogen ions that are introduced in the first passivation layer pass through the oxygen-containing dielectric layer and effectively saturate suspension bonds on the front surface through migration; and a tunneling oxide layer and a doped conductive layer that are sequentially disposed on the rear surface in a direction away from the rear surface , wherein the doped conductive layer and the substrate have doping elements of a same conductivity type; wherein the first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer , the oxygen-containing dielectric layer covers the emitter , the second passivation layer includes a third interface opposite to the second interface , a nitrogen content at the second interface is higher than that at the first interface and the third interface , respectively, a silicon content at the second interface is higher than that at the first interface and the third interface , respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface , respectively. <EOS>