A method for forming a semiconductor structure , characterized by comprising: providing a substrate, the substrate comprising a first isolation groove extending in a first direction and a plurality of active columns arranged in an array along the first direction (X) and a third direction (Z), the substrate being divided into a first area (A) and a second area (B) by the first isolation groove along a second direction (Y), the active columns being supported through support structures , the first direction, the second direction and the third direction being perpendicular to each other in pairs, the first direction and the second direction being parallel to an upper surface of the substrate; forming semi-capacitor structures located in the first area and gate-all-around structures located in the second area in gaps between the active columns ; processing the active columns and the semi-capacitor structures in the first area to form capacitor structures extending in the second direction; and forming first connecting structures connecting the gate-all-around structures and the capacitor structures in the first isolation groove . wherein the forming semi-capacitor structures and gate-all-around structures comprises: sequentially forming a medium layer and a first metal layer on surfaces of the active columns in the first area and the second area; the first metal layer located in the first area constituting the semi-capacitor structure , and the medium layer and the first metal layer located in the second area constituting the gate-all-around structure . providing a substrate, the substrate comprising a first isolation groove extending in a first direction and a plurality of active columns arranged in an array along the first direction (X) and a third direction (Z), the substrate being divided into a first area (A) and a second area (B) by the first isolation groove along a second direction (Y), the active columns being supported through support structures , the first direction, the second direction and the third direction being perpendicular to each other in pairs, the first direction and the second direction being parallel to an upper surface of the substrate; forming semi-capacitor structures located in the first area and gate-all-around structures located in the second area in gaps between the active columns ; processing the active columns and the semi-capacitor structures in the first area to form capacitor structures extending in the second direction; and forming first connecting structures connecting the gate-all-around structures and the capacitor structures in the first isolation groove . wherein the forming semi-capacitor structures and gate-all-around structures comprises: sequentially forming a medium layer and a first metal layer on surfaces of the active columns in the first area and the second area; the first metal layer located in the first area constituting the semi-capacitor structure , and the medium layer and the first metal layer located in the second area constituting the gate-all-around structure . sequentially forming a medium layer and a first metal layer on surfaces of the active columns in the first area and the second area; the first metal layer located in the first area constituting the semi-capacitor structure , and the medium layer and the first metal layer located in the second area constituting the gate-all-around structure . <EOS>