Integrated mask-programmable device comprising: a plurality of metal levels including a top metal level , a bottom metal level and a first intermediate metal level formed between said top and bottom metal levels; a plurality of via levels arranged between the bottom and the first intermediate metal levels and between the first intermediate and the top metal levels and connecting each metal level to adjacent metal levels; said plurality of metal levels forming a first (X1), a second (X2) and at least a third (Y1) terminal, said top and bottom metal levels comprising at least two metal regions (38; 32), and said first intermediate metal level comprising at least three metal regions wherein an intermediate metal region of said first intermediate metal level forms the third terminal (Y1), wherein said metal regions (38; 36; 32) of said top , first intermediate and bottom metal levels form a first and second stack including a metal region of said top metal level, said first and second stack including a metal region of said first intermediate metal level and a metal region of said bottom metal level, the metal regions of said first and second stack being at least partially vertically aligned; in said first and second stack, the metal regions of the intermediate metal level being connected to the metal regions (38; 32) of the top metal level and the bottom metal level by at least one respective via connection (33; 3), and wherein said metal regions of said top metal level in said first and second stacks form the first (X1) and the second (X2) terminals respectively, and wherein said metal regions (38; 36; 32) of said intermediate and bottom metal levels form a third stack , said third stack including a metal region of said first intermediate metal level and a metal region of said bottom metal level, the metal regions of said third stack being at least partially vertically aligned; the metal regions in the third stack of the intermediate metal level being connected to the bottom metal level by at least one respective via connection , and wherein the via connections of said first stack are aligned along two parallel vertical axes , with each via connection being offset with respect to a preceding and/or a subsequent via connection of the first stack , and wherein the via connections of said second and said third stacks are aligned along respective vertical axes the third stack situated between the first stack and the second stack and comprising said third (Y1) terminal. a plurality of metal levels including a top metal level , a bottom metal level and a first intermediate metal level formed between said top and bottom metal levels; a plurality of via levels arranged between the bottom and the first intermediate metal levels and between the first intermediate and the top metal levels and connecting each metal level to adjacent metal levels; said plurality of metal levels forming a first (X1), a second (X2) and at least a third (Y1) terminal, said top and bottom metal levels comprising at least two metal regions (38; 32), and said first intermediate metal level comprising at least three metal regions wherein an intermediate metal region of said first intermediate metal level forms the third terminal (Y1), <EOS>