A system of examination of a semiconductor specimen, the system comprising a processor and memory circuitry (PMC) configured to: - obtain an image of one or more first areas of a semiconductor specimen acquired by an examination tool ; - determine data D att informative of defectivity in the one or more first areas, - determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected, wherein the determining comprises: ∘ generating for each of a plurality of subsets of pixels present in an image of the semiconductor specimen, a probability that a defect is present at each subset, wherein the probability is based on at least one of (i) and (ii): (i) data D att informative of defectivity in the one or more first areas; (ii) data representative of a thickness of the semiconductor specimen and data D correl representative of a correlation between data D att informative of defectivity in the one or more first areas and data representative of a thickness of the semiconductor specimen in the one or more first areas; thereby obtaining probabilities for the plurality of subsets of pixels, and - select the one or more second areas for inspection by the examination tool. - obtain an image of one or more first areas of a semiconductor specimen acquired by an examination tool ; - determine data D att informative of defectivity in the one or more first areas, - determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected, wherein the determining comprises: ∘ generating for each of a plurality of subsets of pixels present in an image of the semiconductor specimen, a probability that a defect is present at each subset, wherein the probability is based on at least one of (i) and (ii): (i) data D att informative of defectivity in the one or more first areas; (ii) data representative of a thickness of the semiconductor specimen and data D correl representative of a correlation between data D att informative of defectivity in the one or more first areas and data representative of a thickness of the semiconductor specimen in the one or more first areas; thereby obtaining probabilities for the plurality of subsets of pixels, and ∘ generating for each of a plurality of subsets of pixels present in an image of the semiconductor specimen, a probability that a defect is present at each subset, wherein the probability is based on at least one of (i) and (ii): (i) data D att informative of defectivity in the one or more first areas; (ii) data representative of a thickness of the semiconductor specimen and data D correl representative of a correlation between data D att informative of defectivity in the one or more first areas and data representative of a thickness of the semiconductor specimen in the one or more first areas; thereby obtaining probabilities for the plurality of subsets of pixels, and (i) data D att informative of defectivity in the one or more first areas; (ii) data representative of a thickness of the semiconductor specimen and data D correl representative of a correlation between data D att informative of defectivity in the one or more first areas and data representative of a thickness of the semiconductor specimen in the one or more first areas; - select the one or more second areas for inspection by the examination tool. <EOS>