An electronic circuit comprising: a switching device chiefly made of SiC, the switching device including a plurality of switching elements (Tr1) that are connected in parallel, and having a gate-source or gate-emitter reference voltage such that when a gate-source or gate-emitter voltage of the switching device is below the gate-source or gate-emitter reference voltage the temperature characteristics of the on-resistance of the switching device is negative, and when the gate-source or gate-emitter voltage of the switching device is above the gate-source or gate-emitter reference voltage the temperature characteristics of the on-resistance of the switching device is positive; and a gate driving circuit to control the switching device, wherein the gate driving circuit includes - a first current interrupting resistor , - a second current interrupting resistor whose resistance value is larger than the resistance value of the first current interrupting resistor, and - a circuit that is configured to ground the gate terminal of the switching device via the second current interrupting resistor at the start time of a current interruption, and is configured to ground the gate terminal of the switching device via the first current interrupting resistor when the gate-source voltage or gate-emitter voltage of the switching device becomes lower than the gate-source or gate-emitter reference voltage, and wherein the resistance value of the first current interrupting resistor is set so that a time interval from a point at which the gate-source voltage or gate-emitter voltage of the switching device becomes lower than the gate-source or gate-emitter reference voltage to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less. a switching device chiefly made of SiC, the switching device including a plurality of switching elements (Tr1) that are connected in parallel, and having a gate-source or gate-emitter reference voltage such that when a gate-source or gate-emitter voltage of the switching device is below the gate-source or gate-emitter reference voltage the temperature characteristics of the on-resistance of the switching device is negative, and when the gate-source or gate-emitter voltage of the switching device is above the gate-source or gate-emitter reference voltage the temperature characteristics of the on-resistance of the switching device is positive; and a gate driving circuit to control the switching device, wherein the gate driving circuit includes - a first current interrupting resistor , - a second current interrupting resistor whose resistance value is larger than the resistance value of the first current interrupting resistor, and - a circuit that is configured to ground the gate terminal of the switching device via the second current interrupting resistor at the start time of a current interruption, and - a first current interrupting resistor , - a second current interrupting resistor whose resistance value is larger than the resistance value of the first current interrupting resistor, and - a circuit that is configured to ground the gate terminal of the switching device via the second current interrupting resistor at the start time of a current interruption, and is configured to ground the gate terminal of the switching device via the first current interrupting resistor when the gate-source voltage or gate-emitter voltage of the switching device becomes lower than the gate-source or gate-emitter reference voltage, and wherein the resistance value of the first current interrupting resistor is set so that a time interval from a point at which the gate-source voltage or gate-emitter voltage of the switching device becomes lower than the gate-source or gate-emitter reference voltage to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less. <EOS>