An electromagnetic shielding material comprising a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150 °C; wherein all of combinations of the metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): σ M × d M × d R ≥ 3 × 10 − 3 , in which: σ M represents a conductivity of metal foil at 20 °C (S/m); d M represents a thickness of metal foil (m); and d R represents a thickness of resin layer (m); wherein the electromagnetic shielding material satisfies the following equation (B): ∑ a = 1 i d R ⁢ a × f R ⁢ a ∑ b = 1 j d M ⁢ b × f M ⁢ b ≧ 0.8 in which: i represents the number of the at least one resin layer forming the electromagnetic shielding material; j represents the number of the metal foils forming the electromagnetic shielding material; d Ra represents a thickness of the a th resin layer (μm); f Ra represents a stress (MPa) of the a th resin layer at 150 °C and 4% tensile strain; d Mb represents a thickness of the b th metal foil (μm); and f Mb represents a stress (MPa) of the b th metal foil at 150 °C and 4% tensile strain; and wherein when the number of the metal foils forming the electromagnetic shielding material is defined as j, all the metal foils from the first foil to the j th foil satisfy the following equation (C): d Rb 1 × f Rb 1 + d Rb 2 × f Rb 2 / d Mb × f Mb ≥ 0.8 in which: b represents an integer from 1 to j; d Rb1 represents a thickness (μm) of a resin layer adjacent to one surface of the b th metal foil; f Rb1 represents a stress (MPa) of the resin layer adjacent to one surface of the b th metal foil, at 150 °C and 4% tensile strain; d Rb2 represents a thickness (μm) of a resin layer adjacent to another surface of the b th metal foil; f Rb2 represents a stress (MPa) of the resin layer adjacent to another surface of the b th metal foil, at 150 ° C and 4% tensile strain; d Mb represents a thickness (μm) of the b th metal foil; f Mb represents a stress (MPa) of the b th metal foil, at 150 °C and 4% tensile strain. σ M represents a conductivity of metal foil at 20 °C (S/m); d M represents a thickness of metal foil (m); and d R represents a thickness of resin layer (m); wherein the electromagnetic shielding material satisfies the following equation (B): i represents the number of the at least one resin layer forming the electromagnetic shielding material; j represents the number of the metal foils forming the electromagnetic shielding material; d Ra represents a thickness of the a th resin layer (μm); f Ra represents a stress (MPa) of the a th resin layer at 150 °C and 4% tensile strain; d Mb represents a thickness of the b th metal foil (μm); and f Mb represents a stress (MPa) of the b th metal foil at 150 °C and 4% tensile strain; and wherein when the number of the metal foils forming the electromagnetic shielding material is defined as j, all the metal foils from the first foil to the j th foil satisfy the following equation (C): b represents an integer from 1 to j; d Rb1 represents a thickness (μm) of a resin layer adjacent to one surface of the b th metal foil; f Rb1 represents a stress (MPa) of the resin layer adjacent to one surface of the b th metal foil, at 150 °C and 4% tensile strain; d Rb2 represents a thickness (μm) of a resin layer adjacent to another surface of the b th metal foil; f Rb2 represents a stress (MPa) of the resin layer adjacent to another surface of the b th metal foil, at 150 ° C and 4% tensile strain; d Mb represents a thickness (μm) of the b th metal foil; f Mb represents a stress (MPa) of the b th metal foil, at 150 °C and 4% tensile strain. <EOS>