A current collector , characterized in comprising: an insulation layer ; at least one conductive layer located above at least one surface of the insulation layer , the insulation layer is used to support the at least one conductive layer , the at least one conductive layer is used to support an electrode active material layer located on a surface of the current collector , and the at least one conductive layer each has a thickness of D2, wherein 300nm≤D2≤2μm; a first protective layer provided on a surface of each of the at least one conductive layer facing towards the insulation layer , wherein the first protective layer is made of a material selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of chromium, nickel-based alloy, or copper-based alloy, and the metal oxide is at least one of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and a second protective layer provided on a surface of the at least one conductive layer facing away from the insulation layer , wherein the second protective layer is made of a metallic material, which is selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of nickel, chromium, nickel-based alloy, copper-based alloy, or combinations thereof, and the metal oxide is aluminum oxide or nickel oxide, wherein the first protective layer has a thickness of D3, and D3≤1/10D2 and 1nm≤D3≤200nm, the second protective layer has a thickness of D3', and D3'≤1/10D2 and 1nm≤D3'≤200nm, the thickness D3' of the second protective layer is larger than the thickness D3 of the first protective layer ; and 1/2 D3'≤D3≤4/5 D3'. an insulation layer ; at least one conductive layer located above at least one surface of the insulation layer , the insulation layer is used to support the at least one conductive layer , the at least one conductive layer is used to support an electrode active material layer located on a surface of the current collector , and the at least one conductive layer each has a thickness of D2, wherein 300nm≤D2≤2μm; a first protective layer provided on a surface of each of the at least one conductive layer facing towards the insulation layer , wherein the first protective layer is made of a material selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of chromium, nickel-based alloy, or copper-based alloy, and the metal oxide is at least one of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and a second protective layer provided on a surface of the at least one conductive layer facing away from the insulation layer , wherein the second protective layer is made of a metallic material, which is selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of nickel, chromium, nickel-based alloy, copper-based alloy, or combinations thereof, and the metal oxide is aluminum oxide or nickel oxide, wherein the first protective layer has a thickness of D3, and D3≤1/10D2 and 1nm≤D3≤200nm, the second protective layer has a thickness of D3', and D3'≤1/10D2 and 1nm≤D3'≤200nm, the thickness D3' of the second protective layer is larger than the thickness D3 of the first protective layer ; and 1/2 D3'≤D3≤4/5 D3'. <EOS>