A method for forming a semiconductor structure comprising the steps of: a. Epitaxially growing a III-V or II-VI buffer layer on a monocrystalline substrate and within a space confined by non-crystalline sidewalls , said space having a width smaller than 10 microns, wherein the material forming the surface of the III-V or II-VI buffer layer facing away from the monocrystalline substrate has a first intrinsic lattice constant in absence of stress and at room temperature, c. Epitaxially growing on said buffer layer an interlayer, and d. Epitaxially growing on said interlayer, at least one strained group IV monocrystalline structure made of a material having a second intrinsic lattice constant in absence of stress and at room temperature, different from said first intrinsic lattice constant in absence of stress and at room temperature, the method further comprises a step h of removing said interlayer from said at least one group IV monocrystalline structure by selectively etching away at least part of the interlayer present on said group IV monocrystalline structure ; wherein the at least one group IV monocrystalline structure has two extremities along its length and wherein the at least one group IV monocrystalline structure is secured to the substrate by having these two extremities attached to the substrate by a material not being etched during step h, wherein the length is a first dimension of the group IV monocrystalline structure which is larger or equal to the width thereof, wherein the width is a second dimension of the group IV monocrystalline structure , and wherein the length and the width are both measured parallel to the substrate, wherein the interlayer is made of a material having a third intrinsic lattice constant in absence of stress and at room temperature, and the interlayer is thinner than a critical thickness at which a strain induced by the difference between the first and the third intrinsic lattice constant in absence of stress and at room temperature is relaxed, characterized in that the interlayer is a III-V or II-VI monocrystalline interlayer, wherein the interlayer is for reducing inter-diffusion between the buffer layer and the at least one group IV monocrystalline structure , and the third intrinsic lattice constant in absence of stress and at room temperature is equal to the second intrinsic lattice constant in absence of stress and at room temperature. a. Epitaxially growing a III-V or II-VI buffer layer on a monocrystalline substrate and within a space confined by non-crystalline sidewalls , said space having a width smaller than 10 microns, wherein the material forming the surface of the III-V or II-VI buffer layer facing away from the monocrystalline substrate has a first intrinsic lattice constant in absence of stress and at room temperature, c. Epitaxially growing on said buffer layer an interlayer, and d. Epitaxially growing on said interlayer, at least one strained group IV monocrystalline structure made of a material having a second intrinsic lattice constant in absence of stress and at room temperature, different from said first intrinsic lattice constant in absence of stress and at room temperature, <EOS>