A solid-state imaging device comprising: a first semiconductor substrate stacked on a second semiconductor substrate , the first semiconductor substrate comprising a light incident face side and a wiring layer formed on the opposite side of the first semiconductor substrate , the wiring layer of the first semiconductor substrate being joined to a back surface side of the second semiconductor substrate , wherein the second semiconductor substrate comprises a wiring layer on the opposite side of said back surface, the first semiconductor substrate including: a photoelectric conversion portion (PD) that photoelectrically converts incident light; and a transfer transistor (Tr1) that transfers an electric charge of the photoelectric conversion portion (PD), and a light blocking film (M4) formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion (PD), the second semiconductor substrate including a charge/voltage retention portion (MEM) that retains the electric charge transferred by the transfer transistor (Tr1) or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate , and transmits the electric charge transferred from the transfer transistor (Tr1) or the voltage to the charge/voltage retention portion (MEM), wherein the light blocking film (M4) is formed above the charge/voltage retention portion (MEM). a first semiconductor substrate stacked on a second semiconductor substrate , the first semiconductor substrate comprising a light incident face side and a wiring layer formed on the opposite side of the first semiconductor substrate , the wiring layer of the first semiconductor substrate being joined to a back surface side of the second semiconductor substrate , wherein the second semiconductor substrate comprises a wiring layer on the opposite side of said back surface, the first semiconductor substrate including: a photoelectric conversion portion (PD) that photoelectrically converts incident light; and a transfer transistor (Tr1) that transfers an electric charge of the photoelectric conversion portion (PD), and a light blocking film (M4) formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion (PD), the second semiconductor substrate including a charge/voltage retention portion (MEM) that retains the electric charge transferred by the transfer transistor (Tr1) or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate , and transmits the electric charge transferred from the transfer transistor (Tr1) or the voltage to the charge/voltage retention portion (MEM), wherein the light blocking film (M4) is formed above the charge/voltage retention portion (MEM). a photoelectric conversion portion (PD) that photoelectrically converts incident light; and a transfer transistor (Tr1) that transfers an electric charge of the photoelectric conversion portion (PD), and a light blocking film (M4) formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion (PD), the second semiconductor substrate including a charge/voltage retention portion (MEM) that retains the electric charge transferred by the transfer transistor (Tr1) or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate , and transmits the electric charge transferred from the transfer transistor (Tr1) or the voltage to the charge/voltage retention portion (MEM), wherein the light blocking film (M4) is formed above the charge/voltage retention portion (MEM). <EOS>