Method for producing a laser chip comprising the following steps: - providing a semiconductor wafer comprising a top side and an underside , wherein the semiconductor wafer , on the top side, comprises a plurality of integrated laser diode structures which are arranged one behind another along a defined breaking direction that runs perpendicular to the growth direction of the semiconductor wafer; - creating a plurality of depressions arranged one behind another along the breaking direction on the top side of the semiconductor wafer , wherein each depression comprises a front boundary face and a rear boundary face successively in the breaking direction , wherein the depression , on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer , wherein, in the case of at least one depression , the rear boundary face encloses an angle of between 95° and 170° with the bottom face , wherein the at least one depression comprises a shoulder adjacent to the rear boundary face , wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face ; - creating a trench running in the breaking direction and arranged in a breaking plane on the underside of the semiconductor wafer , wherein the breaking plane is oriented perpendicular to the top side of the semiconductor wafer and runs through the depressions ; - breaking the semiconductor wafer in the breaking direction at the breaking plane . - providing a semiconductor wafer comprising a top side and an underside , wherein the semiconductor wafer , on the top side, comprises a plurality of integrated laser diode structures which are arranged one behind another along a defined breaking direction that runs perpendicular to the growth direction of the semiconductor wafer; - creating a plurality of depressions arranged one behind another along the breaking direction on the top side of the semiconductor wafer , wherein each depression comprises a front boundary face and a rear boundary face successively in the breaking direction , wherein the depression , on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer , wherein, in the case of at least one depression , the rear boundary face encloses an angle of between 95° and 170° with the bottom face , wherein the at least one depression comprises a shoulder adjacent to the rear boundary face , wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face ; wherein the depression , on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer , wherein, in the case of at least one depression , the rear boundary face encloses an angle of between 95° and 170° with the bottom face , wherein the at least one depression comprises a shoulder adjacent to the rear boundary face , wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face ; - creating a trench running in the breaking direction and arranged in a breaking plane on the underside of the semiconductor wafer , wherein the breaking plane is oriented perpendicular to the top side of the semiconductor wafer and runs through the depressions ; - breaking the semiconductor wafer in the breaking direction at the breaking plane . <EOS>