IGBT semiconductor structure with an upper side and a lower side comprising - a p + substrate , which is formed at the lower side of the IGBT semiconductor structure , with a doping substance concentration of 5 ∗ 10 18 - 5 ∗ 10 20 cm -3 , a layer thickness (D1) of 50 - 500 μm and comprising a GaAs compound or consisting of a GaAs compound, - an n - layer with a doping substance concentration of 10 12 - 10 17 cm -3 , a layer thickness (D2) of 10 - 300 μm and comprising a GaAs compound or consisting of a GaAs compound, - at least one p region , which adjoins the n - layer , with a doping substance concentration of 10 14 n - 10 18 cm -3 and comprising a GaAs compound or consisting of a GaAs compound, - at least one n + region , which adjoins the p region , with a doping substance concentration of at least 10 19 cm -3 and comprising a GaAs compound or consisting of a GaAs compound, - a dielectric layer , - a first connecting contact which is electrically conductively connected with the lower side of the IGBT semiconductor structure and which comprises a metal or a metal compound or consists of a metal or a metal compound, - a second connecting contact and a third connecting contact each comprising a metal or a metal compound or consisting of a metal or a metal compound, wherein - the at least one p region forms, together with the n - layer , a first pn transition , - the at least one n + region forms, together with the at least one p region , a second pn transition , - the dielectric layer covers at least the first pn transition and the second pn transition and is connected with the n - layer , the p region and the n + region by material couple, - the second connecting contact is constructed as a field plate on the dielectric layer and - the third connecting contact is electrically conductively connected with the at least one p region and the at least n + region , wherein a doped intermediate layer with a layer thickness (D3) of 1 μm - 50 μm and a doping substance concentration of 10 12 - 10 17 cm -3 is arranged between the p + substrate and the n - layer , wherein the intermediate layer is connected at least with the p + substrate by material couple. - a p + substrate , which is formed at the lower side of the IGBT semiconductor structure , with a doping substance concentration of 5 ∗ 10 18 - 5 ∗ 10 20 cm -3 , a layer thickness (D1) of 50 - 500 μm and comprising a GaAs compound or consisting of a GaAs compound, - an n - layer with a doping substance concentration of 10 12 - 10 17 cm -3 , a layer thickness (D2) of 10 - 300 μm and comprising a GaAs compound or consisting of a GaAs compound, - at least one p region , which adjoins the n - layer , with a doping substance concentration of 10 14 n - 10 18 cm -3 and comprising a GaAs compound or consisting of a GaAs compound, - at least one n + region , which adjoins the p region , with a doping substance concentration of at least 10 19 cm -3 and comprising a GaAs compound or consisting of a GaAs compound, - a dielectric layer , - a first connecting contact which is electrically conductively connected with the lower side of the IGBT semiconductor structure and which comprises a metal or a metal compound or consists of a metal or a metal compound, - a second connecting contact and a third connecting contact each comprising a metal or a metal compound or consisting of a metal or a metal compound, - the at least one p region forms, together with the n - layer , a first pn transition , - the at least one n + region forms, together with the at least one p region , a second pn transition , - the dielectric layer covers at least the first pn transition and the second pn transition and is connected with the n - layer , the p region and the n + region by material couple, - the second connecting contact is constructed as a field plate on the dielectric layer and - the third connecting contact is electrically conductively connected with the at least one p region and the at least n + region , <EOS>