A method comprising: in a data storage device including a non-volatile memory and a controller , wherein the non-volatile memory includes a word line (120, 226, or 238) coupled to a plurality of storage elements (106, 220, or 230), performing by the controller : detecting a condition associated with a defect (122, 240, or 242) in the word line (120, 226, or 238); and the method comprising further performing by the controller : determining an estimated location within the word line (120, 226, or 238) of the defect ; and determining a first subset (108, 222, 232, or 234) of the plurality of storage elements (106, 220, or 230) coupled to the word line and a second subset (118, 224, 234, or 236) of the plurality of storage elements (106, 220, or 230) coupled to the word line based on the estimated location within the word line (120, 226, or 238) of the defect (122, 240, or 242); determining a first read threshold for the first subset (108, 222, 232, or 234) and a second read threshold for the second subset (118, 224, 234, or 236); reading first data from the first subset (108, 222, 232, or 234) using the first read threshold; reading second data from the second subset (118, 224, 234, or 236) using the second read threshold; the method being characterised by decoding the first data using a first log-likelihood ratio (LLR) associated with the first subset (108, 222, 232, or 234); and decoding the second data using a second LLR associated with the second subset (118, 224, 234, or 236). detecting a condition associated with a defect (122, 240, or 242) in the word line (120, 226, or 238); and the method comprising further performing by the controller : determining an estimated location within the word line (120, 226, or 238) of the defect ; and determining a first subset (108, 222, 232, or 234) of the plurality of storage elements (106, 220, or 230) coupled to the word line and a second subset (118, 224, 234, or 236) of the plurality of storage elements (106, 220, or 230) coupled to the word line based on the estimated location within the word line (120, 226, or 238) of the defect (122, 240, or 242); determining a first read threshold for the first subset (108, 222, 232, or 234) and a second read threshold for the second subset (118, 224, 234, or 236); reading first data from the first subset (108, 222, 232, or 234) using the first read threshold; reading second data from the second subset (118, 224, 234, or 236) using the second read threshold; the method being characterised by decoding the first data using a first log-likelihood ratio (LLR) associated with the first subset (108, 222, 232, or 234); and decoding the second data using a second LLR associated with the second subset (118, 224, 234, or 236). determining an estimated location within the word line (120, 226, or 238) of the defect ; and determining a first subset (108, 222, 232, or 234) of the plurality of storage elements (106, 220, or 230) coupled to the word line and a second subset (118, 224, 234, or 236) of the plurality of storage elements (106, 220, or 230) coupled to the word line based on the estimated location within the word line (120, 226, or 238) of the defect (122, 240, or 242); determining a first read threshold for the first subset (108, 222, 232, or 234) and a second read threshold for the second subset (118, 224, 234, or 236); reading first data from the first subset (108, 222, 232, or 234) using the first read threshold; reading second data from the second subset (118, 224, 234, or 236) using the second read threshold; the method being characterised by decoding the first data using a first log-likelihood ratio (LLR) associated with the first subset (108, 222, 232, or 234); and decoding the second data using a second LLR associated with the second subset (118, 224, 234, or 236). <EOS>