An inductor assembly, wherein the inductor assembly comprises: an inductor and a current regulating device ; wherein the inductor comprises: a first coil and a second coil ; wherein the second coil is configured to generate an induced current when an alternating current is flowing through the first coil ; and two ends of the second coil are connected in series to the current regulating device by a conducting wire, and the current regulating device comprises an insulated gate bipolar transistor; characterized in that the current regulating device further comprises a first diode, D1, a second diode, D2, a third diode, D3, a fourth diode, D4, a capacitor, C, an inductor, L1, and a fifth diode, D5, wherein: one end of the second coil is connected to a cathode of the first diode, D1, and an anode of the third diode, D3, another end of the second coil is connected to a cathode of the second diode, D2, and an anode of the fourth diode, D4, an anode of the first diode, D1, is connected to an anode of the second diode, D2, one plate of the capacitor, C, a source of the insulated gate bipolar transistor, IGBT, and an anode of the fifth diode, D5, respectively, a cathode of the third diode, D3, is connected to a cathode of the fourth diode, D4, another plate of the capacitor, C, and one end of the inductor, L1, respectively, another end of the inductor, L1, is connected to a drain of insulated gate bipolar transistor, IGBT, and a cathode of the fifth diode, D5, respectively. the inductor comprises: a first coil and a second coil ; wherein the second coil is configured to generate an induced current when an alternating current is flowing through the first coil ; and two ends of the second coil are connected in series to the current regulating device by a conducting wire, and the current regulating device comprises an insulated gate bipolar transistor; characterized in that the current regulating device further comprises a first diode, D1, a second diode, D2, a third diode, D3, a fourth diode, D4, a capacitor, C, an inductor, L1, and a fifth diode, D5, wherein: one end of the second coil is connected to a cathode of the first diode, D1, and an anode of the third diode, D3, another end of the second coil is connected to a cathode of the second diode, D2, and an anode of the fourth diode, D4, an anode of the first diode, D1, is connected to an anode of the second diode, D2, one plate of the capacitor, C, a source of the insulated gate bipolar transistor, IGBT, and an anode of the fifth diode, D5, respectively, a cathode of the third diode, D3, is connected to a cathode of the fourth diode, D4, another plate of the capacitor, C, and one end of the inductor, L1, respectively, another end of the inductor, L1, is connected to a drain of insulated gate bipolar transistor, IGBT, and a cathode of the fifth diode, D5, respectively. one end of the second coil is connected to a cathode of the first diode, D1, and an anode of the third diode, D3, another end of the second coil is connected to a cathode of the second diode, D2, and an anode of the fourth diode, D4, an anode of the first diode, D1, is connected to an anode of the second diode, D2, one plate of the capacitor, C, a source of the insulated gate bipolar transistor, IGBT, and an anode of the fifth diode, D5, respectively, a cathode of the third diode, D3, is connected to a cathode of the fourth diode, D4, another plate of the capacitor, C, and one end of the inductor, L1, respectively, another end of the inductor, L1, is connected to a drain of insulated gate bipolar transistor, IGBT, and a cathode of the fifth diode, D5, respectively. <EOS>