Material comprising a glass substrate which is coated on one face with a stack of thin layers having reflective properties in the infrared and/or in solar radiation, comprising a single metallic functional layer , in particular based on silver or a metal alloy containing silver and two anti-reflective coatings , said anti-reflective coatings each comprising at least one dielectric layer , said functional layer being arranged between the two anti-reflective coatings , characterized in that said anti-reflective coating located under said functional layer in the direction of said substrate comprises: - an underlayer of zinc-based oxide ZnO which is located under and in contact with said functional layer , with a physical thickness of said underlayer based on zinc oxide ZnO which is between 0.3 and 4.4 nm, or between 0.3 and 2.9 nm, or between 0.5 and 2.4 nm; - a dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O, with a physical thickness of said dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O which is between 3.0 and 50.0 nm, or between 4.0 and 40.0 nm, or between 5.0 and 35.0 nm; - a dielectric underlayer of silicon-based nitride Si 3 N 4 or a dielectric underlayer of silicon-zirconium-based nitride Si x N y Zr z , which is located under and in contact with said dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O, with a physical thickness of said underlayer of silicon-based nitride Si 3 N 4 or said underlayer of silicon-zirconium-based nitride Si x N y Zr z which is between 5.0 and 50.0 nm, or between 10.0 and 40.0 nm, or between 15.0 and 25.0 nm; and in that said anti-reflective coating located above said functional layer opposite to said substrate comprises: - an overlayer of zinc-based oxide ZnO which is located on and in contact with said functional layer , with a physical thickness of said overlayer of zinc-based oxide ZnO which is between 2.0 and 10.0 nm, or between 2.0 and 8.0 nm, or between 2.5 and 5.4 nm; and - a dielectric overlayer which is located on said overlayer of zinc-based oxide ZnO and preferably a dielectric overlayer of silicon-based nitride, Si 3 N 4 . - an underlayer of zinc-based oxide ZnO which is located under and in contact with said functional layer , with a physical thickness of said underlayer based on zinc oxide ZnO which is between 0.3 and 4.4 nm, or between 0.3 and 2.9 nm, or between 0.5 and 2.4 nm; - a dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O, with a physical thickness of said dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O which is between 3.0 and 50.0 nm, or between 4.0 and 40.0 nm, or between 5.0 and 35.0 nm; - a dielectric underlayer of silicon-based nitride Si 3 N 4 or a dielectric underlayer of silicon-zirconium-based nitride Si x N y Zr z , which is located under and in contact with said dielectric underlayer of zinc- and tin-based mixed oxide Sn i Zn j O, with a physical thickness of said underlayer of silicon-based nitride Si 3 N 4 or said underlayer of silicon-zirconium-based nitride Si x N y Zr z which is between 5.0 and 50.0 nm, or between 10.0 and 40.0 nm, or between 15.0 and 25.0 nm; - an overlayer of zinc-based oxide ZnO which is located on and in contact with said functional layer , with a physical thickness of said overlayer of zinc-based oxide ZnO which is between 2.0 and 10.0 nm, or between 2.0 and 8.0 nm, or between 2.5 and 5.4 nm; and - a dielectric overlayer which is located on said overlayer of zinc-based oxide ZnO and preferably a dielectric overlayer of silicon-based nitride, Si 3 N 4 . <EOS>