A semiconductor device, comprising: a circuit node ; a ground node ; a first transistor comprising a source terminal connected to the circuit node , wherein the first transistor is a p-channel field-effect transistor, FET; a second transistor comprising a collector terminal connected to a drain terminal of the first transistor, wherein the second transistor is an NPN bipolar junction transistor, BJT; a first trigger diode comprising a cathode connected to a base terminal of the second transistor and an anode of the first trigger diode connected to the ground node; a third transistor comprising a drain terminal coupled to the circuit node , a source terminal of the third transistor coupled to the ground node , and a gate terminal of the third transistor connected to an emitter terminal of the second transistor , wherein the third transistor is an n-channel FET; and a triggering circuit comprising an input connected to the circuit node and an output of the triggering circuit connected to a gate terminal of the first transistor , wherein the triggering circuit further comprises: a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node , wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor . a circuit node ; a ground node ; a first transistor comprising a source terminal connected to the circuit node , wherein the first transistor is a p-channel field-effect transistor, FET; a second transistor comprising a collector terminal connected to a drain terminal of the first transistor, wherein the second transistor is an NPN bipolar junction transistor, BJT; a first trigger diode comprising a cathode connected to a base terminal of the second transistor and an anode of the first trigger diode connected to the ground node; a third transistor comprising a drain terminal coupled to the circuit node , a source terminal of the third transistor coupled to the ground node , and a gate terminal of the third transistor connected to an emitter terminal of the second transistor , wherein the third transistor is an n-channel FET; and a triggering circuit comprising an input connected to the circuit node and an output of the triggering circuit connected to a gate terminal of the first transistor , wherein the triggering circuit further comprises: a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node , wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor . a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node , wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor . <EOS>