An EUV-lithographic projection exposure system, comprising: an EUV light source adapted to generate EUV light having a wavelength in a wavelength range of less than 50 nm and having an exposure power of more than 8W, and a projection lens, the projection lens comprising at least two reflective optical elements (M i ), each • comprising a body (MB i ) and a reflective surface (MS i ) for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with the exposure power of the EUV light, being reflected from the reticle when illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein • the bodies (MB m , MB n ) of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures T 0m , T 0n , wherein • the absolute value of the difference between the zero cross temperatures T 0m , T 0n is more than 6K, expresses as abs(T 0m - T 0n )> 6K, and wherein • the projection lens is to be exposed with the EUV light generated by the EUV light source having a wavelength in a wavelength range of less than 50 nm and an exposure power of more than 8W. an EUV light source adapted to generate EUV light having a wavelength in a wavelength range of less than 50 nm and having an exposure power of more than 8W, and a projection lens, the projection lens comprising at least two reflective optical elements (M i ), each • comprising a body (MB i ) and a reflective surface (MS i ) for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with the exposure power of the EUV light, being reflected from the reticle when illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein • the bodies (MB m , MB n ) of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures T 0m , T 0n , wherein • the absolute value of the difference between the zero cross temperatures T 0m , T 0n is more than 6K, expresses as abs(T 0m - T 0n )> 6K, and wherein • the projection lens is to be exposed with the EUV light generated by the EUV light source having a wavelength in a wavelength range of less than 50 nm and an exposure power of more than 8W. • comprising a body (MB i ) and a reflective surface (MS i ) for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with the exposure power of the EUV light, being reflected from the reticle when illuminated by an illumination system of the EUV-lithographic projection exposure system, wherein • the bodies (MB m , MB n ) of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures T 0m , T 0n , wherein • the absolute value of the difference between the zero cross temperatures T 0m , T 0n is more than 6K, expresses as abs(T 0m - T 0n )> 6K, and wherein • the projection lens is to be exposed with the EUV light generated by the EUV light source having a wavelength in a wavelength range of less than 50 nm and an exposure power of more than 8W. <EOS>