A light-emitting element comprising: a first conductivity type semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a second conductivity type semiconductor layer disposed below the first conductivity type semiconductor layer; an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a plurality of holes (H) exposing parts of the first conductivity type semiconductor layer to the bottom surface of the second conductivity type semiconductor layer by penetrating the second conductivity type semiconductor layer and the active layer; first contact electrodes electrically connected to the first conductivity type semiconductor layer from the bottom surface of the second conductivity type semiconductor layer through the plurality of holes; an insulation layer disposed between the first contact electrodes and the plurality of holes; a first electrode layer electrically connected to the first contact electrodes; a second contact electrode electrically connected to the second conductivity type semiconductor layer; and a first current-spreading semiconductor layer disposed into the first conductivity type semiconductor layer above the first contact electrodes, a second current-spreading semiconductor layer between the active layer and the first conductivity type semiconductor layer, wherein the second current-spreading semiconductor layer is lower than the first contact electrodes, wherein the first current-spreading semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the second current-spreading semiconductor layer is disposed between the active layer and the first semiconductor layer wherein the first current-spreading semiconductor layer includes a first conductivity type AlGaN/GaN superlattice layer or a first conductivity type AlGaN/GaN/InGaN superlattice layer. a first conductivity type semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a second conductivity type semiconductor layer disposed below the first conductivity type semiconductor layer; an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a plurality of holes (H) exposing parts of the first conductivity type semiconductor layer to the bottom surface of the second conductivity type semiconductor layer by penetrating the second conductivity type semiconductor layer and the active layer; first contact electrodes electrically connected to the first conductivity type semiconductor layer from the bottom surface of the second conductivity type semiconductor layer through the plurality of holes; an insulation layer disposed between the first contact electrodes and the plurality of holes; a first electrode layer electrically connected to the first contact electrodes; a second contact electrode electrically connected to the second conductivity type semiconductor layer; and a first current-spreading semiconductor layer disposed into the first conductivity type semiconductor layer above the first contact electrodes, a second current-spreading semiconductor layer between the active layer and the first conductivity type semiconductor layer, wherein the second current-spreading semiconductor layer is lower than the first contact electrodes, wherein the first current-spreading semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the second current-spreading semiconductor layer is disposed between the active layer and the first semiconductor layer wherein the first current-spreading semiconductor layer includes a first conductivity type AlGaN/GaN superlattice layer or a first conductivity type AlGaN/GaN/InGaN superlattice layer. <EOS>