Method for setting parameters of a method for treating a stack obtained upon manufacturing a heterojunction photovoltaic cell, the stack comprising a crystalline silicon substrate and a hydrogenated amorphous silicon passivation layer disposed on the substrate, the treatment method aiming to improve efficiency of the heterojunction photovoltaic cell and comprising a step of exposing a face of the stack to electromagnetic radiation , the electromagnetic radiation being emitted by a radiation source and applied to the face of the stack along a line , the stack and the radiation source being relatively translationally moving such that the line sweeps at least part of the face of the stack , the method for setting parameters comprising determining a plurality of parameters of the treatment method so that the heat-up temperature (T) of the stack reached during the treatment method is less than or equal to a threshold temperature (T max ), the plurality of parameters comprising an irradiance (E) of the electromagnetic radiation , a width (L) of the line and a speed (V) of relative displacement between the stack and the radiation source and being determined using the following relationship: Vρc P ΔT C T L C 1 L = − k ΔT C T L C 2 L 2 + ∅ source E e + ∅ ext wherein: - V is the speed of relative displacement between the stack and the radiation source ; - ΔT c is a function of heat-up temperature (T) and represents a temperature variation characteristic of the heat-up in a direction perpendicular to the line ; - L c1 is a function of width (L) of the line and represents a first length characteristic of heat convection during the relative displacement between the stack and the radiation source ; - L c2 is a function of width (L) of the line and represents a second length characteristic of heat diffusion in a direction perpendicular to the line; - Ø source is a function of irradiance (E) of the electromagnetic radiation and thickness (e) of the stack and represents the quantity of heat per unit volume supplied by the radiation source ; - Ø ext represents the quantity of heat per unit volume exchanged with an external environment in which the stack is placed during the step of exposing to the electromagnetic radiation ; - ρ, C p and k are respectively the density, specific heat capacity and thermal conductivity of the stack . - V is the speed of relative displacement between the stack and the radiation source ; - ΔT c is a function of heat-up temperature (T) and represents a temperature variation characteristic of the heat-up in a direction perpendicular to the line ; - L c1 is a function of width (L) of the line and represents a first length characteristic of heat convection during the relative displacement between the stack and the radiation source ; - L c2 is a function of width (L) of the line and represents a second length characteristic of heat diffusion in a direction perpendicular to the line; - Ø source is a function of irradiance (E) of the electromagnetic radiation and thickness (e) of the stack and represents the quantity of heat per unit volume supplied by the radiation source ; - Ø ext represents the quantity of heat per unit volume exchanged with an external environment in which the stack is placed during the step of exposing to the electromagnetic radiation ; - ρ, C p and k are respectively the density, specific heat capacity and thermal conductivity of the stack . <EOS>