A semiconductor light emitting device package comprising: a package body having a depressed portion forming a top-opened cavity and a raised portion around the open region of the cavity; a first electrode layer and a second electrode layer electrically isolated from the package body by an insulating layer interposed between the package body and the first and second electrode layers , the first and second electrode layers being electrically isolated from each other at the bottom surface of the cavity; a semiconductor light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity; a photo sensor placed on the raised portion of the package body and configured to measure output of the semiconductor light emitting device; and a thermo sensor placed on the raised portion of the package body with the insulating layer interposed between the thermo sensor and the package body , wherein the photo sensor is located opposite to the thermo sensor with the semiconductor light emitting device interposed between the photo sensor and the thermo sensor , wherein the bottom surface of the photo sensor includes a first area contacting the raised portion of the package body and a second area facing the bottom of the cavity, wherein the photo sensor includes an electrode layer with an active area which is placed in the second area to sense light emitted from the semiconductor light emitting device , and wherein the thermo sensor includes a heat sensing portion located on the insulating layer of the package body , an electrode pad , and a heat transfer portion interposed between the heat sensing portion and the electrode pad . a package body having a depressed portion forming a top-opened cavity and a raised portion around the open region of the cavity; a first electrode layer and a second electrode layer electrically isolated from the package body by an insulating layer interposed between the package body and the first and second electrode layers , the first and second electrode layers being electrically isolated from each other at the bottom surface of the cavity; a semiconductor light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity; a photo sensor placed on the raised portion of the package body and configured to measure output of the semiconductor light emitting device; and a thermo sensor placed on the raised portion of the package body with the insulating layer interposed between the thermo sensor and the package body , wherein the photo sensor is located opposite to the thermo sensor with the semiconductor light emitting device interposed between the photo sensor and the thermo sensor , wherein the bottom surface of the photo sensor includes a first area contacting the raised portion of the package body and a second area facing the bottom of the cavity, wherein the photo sensor includes an electrode layer with an active area which is placed in the second area to sense light emitted from the semiconductor light emitting device , and wherein the thermo sensor includes a heat sensing portion located on the insulating layer of the package body , an electrode pad , and a heat transfer portion interposed between the heat sensing portion and the electrode pad . <EOS>