Method for the manufacture of PERT solar cells with the steps - providing a n-doped or a p-doped silicon substrate , - carrying out a first doping process, by which at least one side of the n- or p-doped silicon substrate is doped or at least one doped layer is applied to one side of the n- or p-doped silicon substrate in order to produce a firstly doped side, - depositing, at least on the firstly doped side of the PERT solar cell , a substance which passivates the surface or which masks the surface, - carrying out a second doping process, by which at least the other side of the n- or p-doped substrate, lying opposite the firstly doped side, is doped, or by which a doped layer is applied onto this layer, wherein, after carrying out these steps, the edges of the PERT solar cell are wet-chemically etched, characterized in that during the wet-chemical etching, the other, firstly doped side of the PERT solar cell that lies opposite is protected by a water cap , in that the substance which passivates the surface or that masks the surface can be sintered, and in that , after depositing a surface-passivating or a surface-masking substance on at least the firstly doped side of the PERT solar cell and before the wet-chemical etching of the edges , the surface-passivating or a surface-masking substance deposited on the firstly doped side of the PERT solar cell is sintered by means of a high-temperature treatment such that it is not corroded by the etching fluid by means of which the wet-chemical etching of the edges is carried out, or is corroded to a lesser degree than the edges of the PERT solar cell , even if the latter parasitically exhibits the surface-passivating or surface-masking substance upon depositing onto at least the firstly doped side of the PERT solar cell the substance which passivates or masks the surface. - providing a n-doped or a p-doped silicon substrate , - carrying out a first doping process, by which at least one side of the n- or p-doped silicon substrate is doped or at least one doped layer is applied to one side of the n- or p-doped silicon substrate in order to produce a firstly doped side, - depositing, at least on the firstly doped side of the PERT solar cell , a substance which passivates the surface or which masks the surface, - carrying out a second doping process, by which at least the other side of the n- or p-doped substrate, lying opposite the firstly doped side, is doped, or by which a doped layer is applied onto this layer, wherein, after carrying out these steps, the edges of the PERT solar cell are wet-chemically etched, characterized in that during the wet-chemical etching, the other, firstly doped side of the PERT solar cell that lies opposite is protected by a water cap , in that the substance which passivates the surface or that masks the surface can be sintered, and in that , after depositing a surface-passivating or a surface-masking substance on at least the firstly doped side of the PERT solar cell and before the wet-chemical etching of the edges , the surface-passivating or a surface-masking substance deposited on the firstly doped side of the PERT solar cell is sintered by means of a high-temperature treatment such that it is not corroded by the etching fluid by means of which the wet-chemical etching of the edges is carried out, or is corroded to a lesser degree than the edges of the PERT solar cell , even if the latter parasitically exhibits the surface-passivating or surface-masking substance upon depositing onto at least the firstly doped side of the PERT solar cell the substance which passivates or masks the surface. <EOS>