A memory circuit comprising: a memory array comprising a plurality of contiguous rows (M) and a plurality of contiguous columns (N) of memory cells , the plurality of contiguous rows (M) of the memory array being organized as a write-bypass portion that comprises a first portion of the plurality of contiguous rows (M) and a main memory portion that includes a remaining portion of the plurality of contiguous rows (M), wherein the memory circuit being configured to store a given data word in each of a row in the write-bypass portion and another row in the main memory portion during a data write operation in response to a plurality of word-write signals (WLW) and a plurality of bit-write signals (BLW) associated with each of the respective plurality of contiguous columns (N); and a control logic configured to store data associated with storage locations of the given data word in each of the row in the write-bypass portion and the other row in the main memory portion to facilitate access of the given data word during a data read operation, characterized in, that the control logic is configured to, during a data read operation, dictate that the given data word is to be read from the row in the write-bypass portion in response to a start of the data read operation occurring i) after the end of a worst-case propagation time (T R1 + T C1 ) of the bit-write signals and the word-write signal through the write-bypass memory portion subsequent to a start of the data write operation and ii) until the end of a worst-case propagation time (T R2 + T C1 ) of the bit-write signals and the word-write signal through the memory array subsequent to a start of_the data write operation; the given data word is to be read from the other row in the main memory portion in response to the start of the data read operation occurring after the end of the worst-case propagation time (T R2 + Tci) of the bit-write signals and the word-write signal through the memory array subsequent to the start of the data write operation. a memory array comprising a plurality of contiguous rows (M) and a plurality of contiguous columns (N) of memory cells , the plurality of contiguous rows (M) of the memory array being organized as a write-bypass portion that comprises a first portion of the plurality of contiguous rows (M) and a main memory portion that includes a remaining portion of the plurality of contiguous rows (M), wherein the memory circuit being configured to store a given data word in each of a row in the write-bypass portion and another row in the main memory portion during a data write operation in response to a plurality of word-write signals (WLW) and a plurality of bit-write signals (BLW) associated with each of the respective plurality of contiguous columns (N); and a control logic configured to store data associated with storage locations of the given data word in each of the row in the write-bypass portion and the other row in the main memory portion to facilitate access of the given data word during a data read operation, i) after the end of a worst-case propagation time (T R1 + T C1 ) of the bit-write signals and the word-write signal through the write-bypass memory portion subsequent to a start of the data write operation and ii) until the end of a worst-case propagation time (T R2 + T C1 ) of the bit-write signals and the word-write signal through the memory array subsequent to a start of_the data write operation; <EOS>