An imaging device comprising: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region , a photoelectric converter configured to convert light into charges, a first transistor including a gate electrode, a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges, a first plug (cp1) connected to a first portion of the first diffusion region , and a second plug (cp2) connected to a second portion of the second diffusion region , wherein a distance between the first portion and the gate electrode is less than a distance between the second portion and the gate electrode in a plan view. a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region , a photoelectric converter configured to convert light into charges, a first transistor including a gate electrode, a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges, a first plug (cp1) connected to a first portion of the first diffusion region , and a second plug (cp2) connected to a second portion of the second diffusion region , a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region , a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region , a photoelectric converter configured to convert light into charges, a first transistor including a gate electrode, a first source and a first drain, the first diffusion region functioning as one of the first source and the first drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges, a first plug (cp1) connected to a first portion of the first diffusion region , and a second plug (cp2) connected to a second portion of the second diffusion region , wherein a distance between the first portion and the gate electrode is less than a distance between the second portion and the gate electrode in a plan view. <EOS>