A method for manufacturing a light emitting device , the method comprising: providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure , and a growth substrate for the semiconductor layer; bonding the wafer to a support substrate ; exposing the semiconductor layer by removing the growth substrate from the wafer that has been bonded to the support substrate ; separating the semiconductor layer into a plurality of light emitting elements , which comprises forming grooves on a semiconductor layer side surface of the wafer ; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers the surfaces of the light emitting elements , which comprises: forming a coating film on the surfaces of the light emitting elements by applying a slurry comprising phosphor particles (a) contained in a solvent (c), and after forming the coating film, vaporizing the solvent (c) in the coating film to form the phosphor layer , wherein a thickness of the phosphor layer at a protrusion among the protrusions and the recesses is at least twice a thickness of the phosphor layer at a recess among the protrusions and the recesses in at least one given region of the light emitting element . providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure , and a growth substrate for the semiconductor layer; bonding the wafer to a support substrate ; exposing the semiconductor layer by removing the growth substrate from the wafer that has been bonded to the support substrate ; separating the semiconductor layer into a plurality of light emitting elements , which comprises forming grooves on a semiconductor layer side surface of the wafer ; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers the surfaces of the light emitting elements , which comprises: forming a coating film on the surfaces of the light emitting elements by applying a slurry comprising phosphor particles (a) contained in a solvent (c), and after forming the coating film, vaporizing the solvent (c) in the coating film to form the phosphor layer , wherein a thickness of the phosphor layer at a protrusion among the protrusions and the recesses is at least twice a thickness of the phosphor layer at a recess among the protrusions and the recesses in at least one given region of the light emitting element . forming a coating film on the surfaces of the light emitting elements by applying a slurry comprising phosphor particles (a) contained in a solvent (c), and after forming the coating film, vaporizing the solvent (c) in the coating film to form the phosphor layer , wherein a thickness of the phosphor layer at a protrusion among the protrusions and the recesses is at least twice a thickness of the phosphor layer at a recess among the protrusions and the recesses in at least one given region of the light emitting element . <EOS>