A driver circuit for controlling a semiconductor power switch (Q7) driving an electric load in the form of a motor, the driver circuit comprising: a first power driver transistor (Q6) and a second power driver transistor (Q5), complementary to the first power driver transistor (Q6); the first and second power driver transistors (Q6, Q5) each having a respective output terminal, drain, connected to a node connected to an input terminal, base, of the semiconductor power switch (Q7) in the form of a bipolar transistor, wherein an output terminal, collector, of the semiconductor power switch (Q7) is connected to the motor and another terminal, emitter, of the semiconductor power switch (Q7) is connected to a DC power source, an input terminal, gate, of the second power driver transistor (Q5) is connected to a half bridge circuit comprising a first pre-driver transistor (Q3) and a second pre-driver transistor (Q4), complementary to the first pre-driver transistor (Q3); the first and second pre-driver transistors (Q3, Q4) each having a respective output terminal, drain, connected to a node connected to the input terminal, gate, of the second power driver transistor (Q5), wherein the first pre-driver transistor (Q3) is a P-channel metal-oxide-semiconductor field-effect transistor and the second pre-driver transistor (Q4) is an N-channel metal-oxide-semiconductor field-effect transistor, further comprising a voltage limiter (D2) connected between the output terminal (drain) of the second pre-driver transistor (Q4) and the node connected to the output terminal (drain) of the first pre-driver transistor (Q3) and the input terminal, gate, of the second power driver transistor (Q5), and by a pull-up resistor (R3) connected between a source terminal of the first pre-driver transistor (Q3) and a supply voltage , the pull-up resistor (R3) sized based on the switching speed requirement for the second power driver transistor (Q5). a first power driver transistor (Q6) and a second power driver transistor (Q5), complementary to the first power driver transistor (Q6); the first and second power driver transistors (Q6, Q5) each having a respective output terminal, drain, connected to a node connected to an input terminal, base, of the semiconductor power switch (Q7) in the form of a bipolar transistor, wherein an output terminal, collector, of the semiconductor power switch (Q7) is connected to the motor and another terminal, emitter, of the semiconductor power switch (Q7) is connected to a DC power source, an input terminal, gate, of the second power driver transistor (Q5) is connected to a half bridge circuit comprising a first pre-driver transistor (Q3) and a second pre-driver transistor (Q4), complementary to the first pre-driver transistor (Q3); the first and second pre-driver transistors (Q3, Q4) each having a respective output terminal, drain, connected to a node connected to the input terminal, gate, of the second power driver transistor (Q5), wherein the first pre-driver transistor (Q3) is a P-channel metal-oxide-semiconductor field-effect transistor and the second pre-driver transistor (Q4) is an N-channel metal-oxide-semiconductor field-effect transistor, further comprising a voltage limiter (D2) connected between the output terminal (drain) of the second pre-driver transistor (Q4) and the node connected to the output terminal (drain) of the first pre-driver transistor (Q3) and the input terminal, gate, of the second power driver transistor (Q5), and by a pull-up resistor (R3) connected between a source terminal of the first pre-driver transistor (Q3) and a supply voltage , the pull-up resistor (R3) sized based on the switching speed requirement for the second power driver transistor (Q5). <EOS>