A device (100; 200; 300; 400; 500; 600) for multi-spectral photo-detection in the infrared, which includes a photo-detection stage (140; 540) and a filtering stage (110; 210; 510), superimposed on top of one another along an axis called the optical axis, wherein: - the photo-detection stage (140; 540) includes a read circuit , an active layer (141; 241) made of a semiconductor material, incorporating a matrix of photodiodes (1410; 6410), and a support substrate , superimposed in that order along the optical axis, and with the read circuit electrically connected to the photodiodes (1410; 6410) of the photodiode matrix; - the filtering stage (110; 210; 510) comprises a matrix of filtering areas which consists of filtering areas of at least two types, among which filtering areas of a first type (1102; 3102; 4102; 5102; 6102), each formed of an interference filter and each capable of transmitting the wavelengths of a first spectral band and of blocking the wavelengths of a second spectral band, and filtering areas of a second type (1103; 3103; 4103; 5103; 6103), each capable of transmitting at least part of the wavelengths of the second spectral band; characterised in that it further includes: - an adhesive layer (120; 220), which extends between the photo-detection stage (140; 540) and the filtering stage (110; 210; 510), with, in the photo-detection stage, the support substrate located on the adhesive layer side; and - an anti-reflective coating (130; 230), which extends between the adhesive layer (120; 220) and the support substrate , and which is configured to reduce inner reflections in the infrared. - the photo-detection stage (140; 540) includes a read circuit , an active layer (141; 241) made of a semiconductor material, incorporating a matrix of photodiodes (1410; 6410), and a support substrate , superimposed in that order along the optical axis, and with the read circuit electrically connected to the photodiodes (1410; 6410) of the photodiode matrix; - the filtering stage (110; 210; 510) comprises a matrix of filtering areas which consists of filtering areas of at least two types, among which filtering areas of a first type (1102; 3102; 4102; 5102; 6102), each formed of an interference filter and each capable of transmitting the wavelengths of a first spectral band and of blocking the wavelengths of a second spectral band, and filtering areas of a second type (1103; 3103; 4103; 5103; 6103), each capable of transmitting at least part of the wavelengths of the second spectral band; characterised in that it further includes: - an adhesive layer (120; 220), which extends between the photo-detection stage (140; 540) and the filtering stage (110; 210; 510), with, in the photo-detection stage, the support substrate located on the adhesive layer side; and - an anti-reflective coating (130; 230), which extends between the adhesive layer (120; 220) and the support substrate , and which is configured to reduce inner reflections in the infrared. - an adhesive layer (120; 220), which extends between the photo-detection stage (140; 540) and the filtering stage (110; 210; 510), with, in the photo-detection stage, the support substrate located on the adhesive layer side; and - an anti-reflective coating (130; 230), which extends between the adhesive layer (120; 220) and the support substrate , and which is configured to reduce inner reflections in the infrared. <EOS>