A method for manufacturing a super-junction, comprising: providing (S11) a substrate_doped with a first doping density; forming (S12) a p-type region doped with a second doping density within the substrate doped with the first doping density through a transmutation doping process by taking a first mask with a pattern of the p-type region doped with the second doping density, wherein the second doping density is higher than the first doping density; forming (S13) an n-type region doped with a third doping density within the substrate doped with the first doping density through a transmutation doping process by taking a second mask with a pattern of the n-type region doped with the third doping density, wherein the third doping density is higher than the first doping density; and performing (S14) annealing treatment; wherein the forming the p-type region doped with the second doping density within the substrate doped with the first doping density through the transmutation doping process comprises: forming (S221) a high-energy photon beam by using a photon source; and forming (S222) the p-type region doped with the second doping density within the substrate doped with the first doping density by a nuclear reaction started by particle radiation on the substrate doped with the first doping density by using the high-energy photon beam; wherein the energy of the high-energy photon beam is between 17.5 MeV and 22.5 MeV. providing (S11) a substrate_doped with a first doping density; forming (S12) a p-type region doped with a second doping density within the substrate doped with the first doping density through a transmutation doping process by taking a first mask with a pattern of the p-type region doped with the second doping density, wherein the second doping density is higher than the first doping density; forming (S13) an n-type region doped with a third doping density within the substrate doped with the first doping density through a transmutation doping process by taking a second mask with a pattern of the n-type region doped with the third doping density, wherein the third doping density is higher than the first doping density; and performing (S14) annealing treatment; wherein the forming the p-type region doped with the second doping density within the substrate doped with the first doping density through the transmutation doping process comprises: forming (S221) a high-energy photon beam by using a photon source; and forming (S222) the p-type region doped with the second doping density within the substrate doped with the first doping density by a nuclear reaction started by particle radiation on the substrate doped with the first doping density by using the high-energy photon beam; wherein the energy of the high-energy photon beam is between 17.5 MeV and 22.5 MeV. forming (S221) a high-energy photon beam by using a photon source; and forming (S222) the p-type region doped with the second doping density within the substrate doped with the first doping density by a nuclear reaction started by particle radiation on the substrate doped with the first doping density by using the high-energy photon beam; wherein the energy of the high-energy photon beam is between 17.5 MeV and 22.5 MeV. <EOS>