A method for making an electronic device, said method comprising in order the steps of: providing a first growth substrate having a first receiving surface; forming a first semiconductor epilayer on said first receiving surface via epitaxial growth, said first semiconductor epilayer having a first contact surface; bonding said first contact surface of said first semiconductor epilayer to a handle substrate having an adhesion layer provided thereon; releasing said first semiconductor epilayer from said first growth substrate wherein said first semiconductor epilayer remains bonded to said handle substrate , thereby exposing a second contact surface of said first semiconductor epilayer ; patterning said second contact surface of said first semiconductor epilayer with a mask , thereby generating exposed regions and one or more masked regions of said second contact surface; removing material from said exposed regions by etching said exposed regions, thereby generating one or more semiconductor structures supported by said handle substrate ; partially releasing said one or more semiconductor structures from said handle substrate by partially detaching the semiconductor structure from the handle substrate , thereby generating one or more partially undercut semiconductor structures each connected to said handle substrate by one or more anchors ; and transferring at least one of said one or more partially undercut semiconductor structures from said handle substrate to a device substrate via dry transfer contact printing, thereby assembling said semiconductor structures on said device substrate to make said electronic device. providing a first growth substrate having a first receiving surface; forming a first semiconductor epilayer on said first receiving surface via epitaxial growth, said first semiconductor epilayer having a first contact surface; bonding said first contact surface of said first semiconductor epilayer to a handle substrate having an adhesion layer provided thereon; releasing said first semiconductor epilayer from said first growth substrate wherein said first semiconductor epilayer remains bonded to said handle substrate , thereby exposing a second contact surface of said first semiconductor epilayer ; patterning said second contact surface of said first semiconductor epilayer with a mask , thereby generating exposed regions and one or more masked regions of said second contact surface; removing material from said exposed regions by etching said exposed regions, thereby generating one or more semiconductor structures supported by said handle substrate ; partially releasing said one or more semiconductor structures from said handle substrate by partially detaching the semiconductor structure from the handle substrate , thereby generating one or more partially undercut semiconductor structures each connected to said handle substrate by one or more anchors ; and transferring at least one of said one or more partially undercut semiconductor structures from said handle substrate to a device substrate via dry transfer contact printing, thereby assembling said semiconductor structures on said device substrate to make said electronic device. <EOS>