A method for dicing a semiconductor substrate into a plurality of dies , wherein the semiconductor substrate having a front side provided with a plurality of device areas , a back side , and a plurality of through substrate vias , the method comprising the following order of steps: defining, from the front side of the semiconductor substrate , at least one trench to be formed between adjacent device areas , forming the at least one trench , from the front side of the semiconductor substrate , such that a major portion of a thickness of the semiconductor substrate is removed in the at least one trench , thereby leaving a minor portion of the thickness of the semiconductor substrate underneath the at least one trench , arranging, subsequent to forming the at least one trench , a protective layer on the front side of the semiconductor substrate , the protective layer covering at least a plurality of device areas , thinning, subsequent to arranging the protective layer , the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate , whereby at least one through substrate via is revealed while a portion of the minor portion of the thickness of the semiconductor substrate is remained underneath the at least one trench , processing the back side of the semiconductor substrate 100 to form at least one contact , the contact contacting at least one revealed through substrate via , etching, subsequent to processing the back side , from the back side of the semiconductor substrate , through the remaining portion of the minor portion of the thickness of the semiconductor substrate underneath the at least one trench , thereby separating the semiconductor substrate into a plurality of device areas arranged underneath the protective layer , and dicing the semiconductor substrate into the plurality of dies . defining, from the front side of the semiconductor substrate , at least one trench to be formed between adjacent device areas , forming the at least one trench , from the front side of the semiconductor substrate , such that a major portion of a thickness of the semiconductor substrate is removed in the at least one trench , thereby leaving a minor portion of the thickness of the semiconductor substrate underneath the at least one trench , arranging, subsequent to forming the at least one trench , a protective layer on the front side of the semiconductor substrate , the protective layer covering at least a plurality of device areas , thinning, subsequent to arranging the protective layer , the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate , whereby at least one through substrate via is revealed while a portion of the minor portion of the thickness of the semiconductor substrate is remained underneath the at least one trench , processing the back side of the semiconductor substrate 100 to form at least one contact , the contact contacting at least one revealed through substrate via , etching, subsequent to processing the back side , from the back side of the semiconductor substrate , through the remaining portion of the minor portion of the thickness of the semiconductor substrate underneath the at least one trench , thereby separating the semiconductor substrate into a plurality of device areas arranged underneath the protective layer , and dicing the semiconductor substrate into the plurality of dies . <EOS>