Electronic device comprising a first organic transistor having a threshold voltage V 1 and at least one second organic transistor having a threshold voltage V 2 , V 1 and V 2 differing from one another by a value of at least 0.2V, each of the first and second transistors comprising a layer made of a semi-conductive material, above a layer made of a dielectric material, and comprising in addition: - a first self-assembled layer of molecules having a first dipole moment M 1 , between the layer made of a dielectric material and the layer made of a semi-conductive material of the first organic transistor, and - a second self-assembled layer of molecules having a second dipole moment M 2 , between the layer made of a dielectric material and the layer made of a semi-conductive material of the second organic transistor, the molecules from which the self-assembled layers of the first and of the at least one second organic transistor having the following formula I: A-D-Z Formula I wherein: - A is a group for grafting the molecule of formula I on the dielectric material, preferably a trihalogenosilane, trialcoxysilane, carboxylic acid, phosphoric acid group, an unsaturated group, preferably comprising a vinyl or acetylenic group, a diazonium salt, an azide, a radical-initiating compound, an isocyanate, a organolithium, organomagnesium, or organozinc, or sulphonic acid group, - Z is a terminal group comprising 3 to 8 carbon atoms, linear or ramified or aromatic, optionally comprising at least one fluorine atom, - D is a linear or ramified carbon chain, saturated or unsaturated, possibly comprising a cyclic, possibly aromatic group and/or several heteroatoms, and the difference between the value of the angle of the waterdrop of the self-assembled layer of the first organic transistor and the value of the angle of the waterdrop of the self-assembled layer of the at least one second organic transistor being less than 5%, preferably less than 3%, and the absolute value of the difference between the dipole moment M 1 and the dipole moment M 2 , |M 1 -M 2 | is of between 0.2 and 10 Debye. - a first self-assembled layer of molecules having a first dipole moment M 1 , between the layer made of a dielectric material and the layer made of a semi-conductive material of the first organic transistor, and - a second self-assembled layer of molecules having a second dipole moment M 2 , between the layer made of a dielectric material and the layer made of a semi-conductive material of the second organic transistor, - A is a group for grafting the molecule of formula I on the dielectric material, preferably a trihalogenosilane, trialcoxysilane, carboxylic acid, phosphoric acid group, an unsaturated group, preferably comprising a vinyl or acetylenic group, a diazonium salt, an azide, a radical-initiating compound, an isocyanate, a organolithium, organomagnesium, or organozinc, or sulphonic acid group, - Z is a terminal group comprising 3 to 8 carbon atoms, linear or ramified or aromatic, optionally comprising at least one fluorine atom, - D is a linear or ramified carbon chain, saturated or unsaturated, possibly comprising a cyclic, possibly aromatic group and/or several heteroatoms, and the difference between the value of the angle of the waterdrop of the self-assembled layer of the first organic transistor and the value of the angle of the waterdrop of the self-assembled layer of the at least one second organic transistor being less than 5%, preferably less than 3%, and the absolute value of the difference between the dipole moment M 1 and the dipole moment M 2 , |M 1 -M 2 | is of between 0.2 and 10 Debye. <EOS>