An organic light emitting display comprising: a substrate ; and a plurality of sub-pixels (SP), each sub-pixel having: a first area for light emission; a second area comprising a gate electrode , a source electrode , and a drain electrode of a transistor , the second area being different than the first area; and a first reflection reduction layer , a second reflection reduction layer, and a third reflection reduction layer ; wherein the first reflection reduction layer , the second reflection reduction layer, and the third reflection reduction layer (157a; 157b) are in the second area but not the first area ; wherein the first reflection reduction layer is located between the gate electrode and the substrate , the second reflection reduction layer is located between the source electrode and the substrate , and the third reflection reduction layer (157a; 157b) is located between the drain electrode and the substrate ; wherein the first reflection reduction layer , the second reflection reduction layer, and the third reflection reduction layer have lower light reflectability than a material of the transistor electrodes (152; 156; 157); wherein the first reflection reduction layer and the gate electrode have a same patterned shape, the second reflection reduction layer and the source electrode have a same patterned shape, and the third reflection reduction layer (157a; 157b) and the drain electrode have a same patterned shape; wherein the first reflection reduction layer is included in the material of the gate electrode , the second reflection reduction layer is included in the material of the source electrode , and the third reflection reduction layer (157a; 157b) is included in the material of the drain electrode . a substrate ; and a plurality of sub-pixels (SP), each sub-pixel having: a first area for light emission; a second area comprising a gate electrode , a source electrode , and a drain electrode of a transistor , the second area being different than the first area; and a first reflection reduction layer , a second reflection reduction layer, and a third reflection reduction layer ; a first area for light emission; a second area comprising a gate electrode , a source electrode , and a drain electrode of a transistor , the second area being different than the first area; and a first reflection reduction layer , a second reflection reduction layer, and a third reflection reduction layer ; wherein the first reflection reduction layer , the second reflection reduction layer, and the third reflection reduction layer (157a; 157b) are in the second area but not the first area ; wherein the first reflection reduction layer is located between the gate electrode and the substrate , the second reflection reduction layer is located between the source electrode and the substrate , and the third reflection reduction layer (157a; 157b) is located between the drain electrode and the substrate ; wherein the first reflection reduction layer , the second reflection reduction layer, and the third reflection reduction layer have lower light reflectability than a material of the transistor electrodes (152; 156; 157); wherein the first reflection reduction layer and the gate electrode have a same patterned shape, the second reflection reduction layer and the source electrode have a same patterned shape, and the third reflection reduction layer (157a; 157b) and the drain electrode have a same patterned shape; wherein the first reflection reduction layer is included in the material of the gate electrode , the second reflection reduction layer is included in the material of the source electrode , and the third reflection reduction layer (157a; 157b) is included in the material of the drain electrode . <EOS>