A circuit for protecting against over-voltage, Electrostatic Discharge, ESD, comprising: a switching shunt sub-circuit coupled between a first and second node , wherein the switching shunt sub-circuit is configured to short the first and second nodes together by a conductive path through the switching shunt sub-circuit between the first and second node when a potential at a third node coupled to a control input of the switching shunt sub-circuit raises above a predetermined level; a first clamping sub-circuit coupled between the first node and the third node ; a first switching sub-circuit and a first resistive sub-circuit coupled in series between the third node and the second node , wherein the first resistive sub-circuit is coupled between the first switching sub-circuit and the second node , wherein the first switching sub-circuit is configured to couple the first resistive sub-circuit to the first clamping sub-circuit when a potential at the first node is above a potential of the second node , and wherein the third node is biased at a first given potential drop below the potential on the first node by the first clamping sub-circuit when the potential at the first node is above the potential at the second node ; a second clamping sub-circuit coupled between the third node and the second node ; and a second switching sub-circuit and a second resistive sub-circuit coupled in series between the first node and the third node , wherein the second resistive subcircuit is coupled between the first node and the second switching sub-circuit , wherein the second switching sub-circuit is configured to couple the second resistive sub-circuit to the second clamping sub-circuit when the potential at the second node is above the potential of the first node , and wherein the third node is biased at a second given potential drop below the potential on the second node by the second clamping sub-circuit when the potential at the second node is above the potential of the first node . a switching shunt sub-circuit coupled between a first and second node , wherein the switching shunt sub-circuit is configured to short the first and second nodes together by a conductive path through the switching shunt sub-circuit between the first and second node when a potential at a third node coupled to a control input of the switching shunt sub-circuit raises above a predetermined level; a first clamping sub-circuit coupled between the first node and the third node ; a first switching sub-circuit and a first resistive sub-circuit coupled in series between the third node and the second node , wherein the first resistive sub-circuit is coupled between the first switching sub-circuit and the second node , wherein the first switching sub-circuit is configured to couple the first resistive sub-circuit to the first clamping sub-circuit when a potential at the first node is above a potential of the second node , and wherein the third node is biased at a first given potential drop below the potential on the first node by the first clamping sub-circuit when the potential at the first node is above the potential at the second node ; a second clamping sub-circuit coupled between the third node and the second node ; and a second switching sub-circuit and a second resistive sub-circuit coupled in series between the first node and the third node , wherein the second resistive subcircuit is coupled between the first node and the second switching sub-circuit , wherein the second switching sub-circuit is configured to couple the second resistive sub-circuit to the second clamping sub-circuit when the potential at the second node is above the potential of the first node , and wherein the third node is biased at a second given potential drop below the potential on the second node by the second clamping sub-circuit when the potential at the second node is above the potential of the first node . <EOS>