A method comprising: forming a cavity in a support structure , the support structure operable to support a semiconductor device; disposing at least a portion of a circuit element in the cavity in the support structure; filling the cavity in the support structure with an electrically non-conductive filling material so as to at least partially surround the circuit element with the non-conductive filling material; electrically connecting the semiconductor device to the circuit element; forming at least one build-on layer upon at least one outer surface of the support structure ; and forming a via within the build-on layer that exposes at least a portion of a conductive terminal end of the circuit element ; wherein the electrically connecting of the semiconductor device to the circuit element comprises forming a first conductive material layer over a least a portion of the build-on layer that extends within the via to contact the conductive terminal end of the circuit element ; and further comprising: forming a second conductive material layer over portions of the at least one outer surface of the support structure prior to forming the at least one build-on layer upon at least one outer surface of the support structure , wherein each formed second conductive material layer provides an electrical path between circuit components of the semiconductor device, wherein the second conductive material layer formed over portions of the at least one outer surface of the support structure is further formed within side wall portions of the cavity in the support structure , and wherein the second conductive material layer provides an electrical path for circuit components that are not connected with the circuit element . forming a cavity in a support structure , the support structure operable to support a semiconductor device; disposing at least a portion of a circuit element in the cavity in the support structure; filling the cavity in the support structure with an electrically non-conductive filling material so as to at least partially surround the circuit element with the non-conductive filling material; electrically connecting the semiconductor device to the circuit element; forming at least one build-on layer upon at least one outer surface of the support structure ; and forming a via within the build-on layer that exposes at least a portion of a conductive terminal end of the circuit element ; wherein the electrically connecting of the semiconductor device to the circuit element comprises forming a first conductive material layer over a least a portion of the build-on layer that extends within the via to contact the conductive terminal end of the circuit element ; and further comprising: forming a second conductive material layer over portions of the at least one outer surface of the support structure prior to forming the at least one build-on layer upon at least one outer surface of the support structure , wherein each formed second conductive material layer provides an electrical path between circuit components of the semiconductor device, wherein the second conductive material layer formed over portions of the at least one outer surface of the support structure is further formed within side wall portions of the cavity in the support structure , and wherein the second conductive material layer provides an electrical path for circuit components that are not connected with the circuit element . <EOS>