A device comprising: an n-type region ; a p-type region ; a light emitting layer , wherein the light emitting layer is disposed between the n-type region and the p-type region , wherein the light emitting layer is a III-V material comprising nitrogen and phosphorus, wherein the light emitting layer is InGaNP; and a graded region disposed between the light emitting layer and one of the p-type region and the n-type region, wherein a composition in the graded region is graded; wherein the graded region is a first graded region disposed between the light emitting layer and the p-type region , wherein the device further comprises a second graded region disposed between the light emitting layer and the n-type region , wherein a composition in the second graded region is graded; wherein the n-type region and the p-type region are GaP; wherein the composition in the light emitting layer is graded from GaP in a portion of the first graded region closest to the p-type region to AlGaP in a portion of the graded region closest to the light emitting layer ; wherein the composition in the light emitting layer is graded from a composition of GaP in a portion of the second graded region closest to the n-type region to a composition of AlGaP in a portion of the graded region closest to the light emitting layer . an n-type region ; a p-type region ; a light emitting layer , wherein the light emitting layer is disposed between the n-type region and the p-type region , wherein the light emitting layer is a III-V material comprising nitrogen and phosphorus, wherein the light emitting layer is InGaNP; and a graded region disposed between the light emitting layer and one of the p-type region and the n-type region, wherein a composition in the graded region is graded; wherein the graded region is a first graded region disposed between the light emitting layer and the p-type region , wherein the device further comprises a second graded region disposed between the light emitting layer and the n-type region , wherein a composition in the second graded region is graded; wherein the n-type region and the p-type region are GaP; wherein the composition in the light emitting layer is graded from GaP in a portion of the first graded region closest to the p-type region to AlGaP in a portion of the graded region closest to the light emitting layer ; wherein the composition in the light emitting layer is graded from a composition of GaP in a portion of the second graded region closest to the n-type region to a composition of AlGaP in a portion of the graded region closest to the light emitting layer . wherein the graded region is a first graded region disposed between the light emitting layer and the p-type region , wherein the device further comprises a second graded region disposed between the light emitting layer and the n-type region , wherein a composition in the second graded region is graded; wherein the n-type region and the p-type region are GaP; wherein the composition in the light emitting layer is graded from GaP in a portion of the first graded region closest to the p-type region to AlGaP in a portion of the graded region closest to the light emitting layer ; wherein the composition in the light emitting layer is graded from a composition of GaP in a portion of the second graded region closest to the n-type region to a composition of AlGaP in a portion of the graded region closest to the light emitting layer . <EOS>