A range sensor comprising: a pixel layer made of a semiconductor of a first conductivity type; a shielding plate having an aperture and provided above the pixel layer , wherein an inner edge of the aperture defines a light-receiving area in the pixel layer ; a surface-buried region of a second conductivity type selectively buried in an upper portion of the pixel layer , configured to implement a photodiode in the light-receiving area by forming a junction with the pixel layer , wherein the surface-buried region extends from the light-receiving area toward plural portions shielded by the shielding plate along the upper portion of the pixel layer , delineating a configuration with three or more branches; a plurality of charge-accumulation regions of the second conductivity type having a higher impurity concentration than the surface-buried region connected to tips of the respective branches; a plurality of transfer-control mechanisms provided at the respective branches adjacent to the charge-accumulation regions to control a transfer of signal charges to the charge-accumulation regions ; and a guide region of the second conductivity type having a higher impurity concentration than the surface-buried region , and a lower impurity concentration than the charge-accumulation regions , wherein the guide region is buried in a part of an upper portion of the surface-buried region such that one end of a planar pattern is provided in a part of the light-receiving area defined by the inner edge of the aperture and other ends of the planar pattern are branched under the optical shielding plate , extending to at least a part of the respective transfer-control mechanisms , the planar pattern having a gradually increasing width along the direction towards the transfer control mechanisms measured in a direction perpendicular to a transfer direction of the signal charges. a pixel layer made of a semiconductor of a first conductivity type; a shielding plate having an aperture and provided above the pixel layer , wherein an inner edge of the aperture defines a light-receiving area in the pixel layer ; a surface-buried region of a second conductivity type selectively buried in an upper portion of the pixel layer , configured to implement a photodiode in the light-receiving area by forming a junction with the pixel layer , wherein the surface-buried region extends from the light-receiving area toward plural portions shielded by the shielding plate along the upper portion of the pixel layer , delineating a configuration with three or more branches; a plurality of charge-accumulation regions of the second conductivity type having a higher impurity concentration than the surface-buried region connected to tips of the respective branches; a plurality of transfer-control mechanisms provided at the respective branches adjacent to the charge-accumulation regions to control a transfer of signal charges to the charge-accumulation regions ; and a guide region of the second conductivity type having a higher impurity concentration than the surface-buried region , and a lower impurity concentration than the charge-accumulation regions , wherein the guide region is buried in a part of an upper portion of the surface-buried region such that one end of a planar pattern is provided in a part of the light-receiving area defined by the inner edge of the aperture and other ends of the planar pattern are branched under the optical shielding plate , extending to at least a part of the respective transfer-control mechanisms , the planar pattern having a gradually increasing width along the direction towards the transfer control mechanisms measured in a direction perpendicular to a transfer direction of the signal charges. <EOS>