mhurhangee/patent-ind-claim-en huggingface dataset:
An implant catheter for heart valve repair which comprises: an outer jacket ; one or more layers positioned inside the outer jacket ; a reinforcement layer positioned inside the outer jacket ; and a first leakage shield located adjacent to the reinforcement layer and situated between the reinforcement layer and the outer jacket ; wherein at least one of the outer jacket and the one or more of the layers are reflowed to bond the jacket, the reinforcement layer, and the one or more layers together; wherein a portion of the reinforcement layer is free from all material of the outer jacket and the one or more layers that are reflowed; and wherein the first leakage shield prevents material of the outer jacket and the one or more layers that are reflowed from contacting the portion of the reinforcement layer . an outer jacket ; one or more layers positioned inside the outer jacket ; a reinforcement layer positioned inside the outer jacket ; and a first leakage shield located adjacent to the reinforcement layer and situated between the reinforcement layer and the outer jacket ; wherein at least one of the outer jacket and the one or more of the layers are reflowed to bond the jacket, the reinforcement layer, and the one or more layers together; wherein a portion of the reinforcement layer is free from all material of the outer jacket and the one or more layers that are reflowed; and wherein the first leakage shield prevents material of the outer jacket and the one or more layers that are reflowed from contacting the portion of the reinforcement layer .
A dispenser for applying a viscous material, in particular hot melt adhesive, to a substrate, comprising: a base body , and a plurality of dispensing modules arranged side by side in series along a lateral axis (Q) of the dispenser and attached to the base body , characterized in that the dispensing modules each have at least one recess which, together with a recess of an adjacent dispensing module , forms a fastening aperture , and that in each of the fastening apertures a bolt is seated, the bolt is fastened to the base body and is supported on a side of the dispensing modules facing away from the base body against both dispensing modules forming the respective fastening aperture . a base body , and a plurality of dispensing modules arranged side by side in series along a lateral axis (Q) of the dispenser and attached to the base body , characterized in that the dispensing modules each have at least one recess which, together with a recess of an adjacent dispensing module , forms a fastening aperture , and that in each of the fastening apertures a bolt is seated, the bolt is fastened to the base body and is supported on a side of the dispensing modules facing away from the base body against both dispensing modules forming the respective fastening aperture .
A device comprising an upwardly open hollow body and a removable lid , having fuel content arranged inside the upwardly open hollow body , wherein the lid is pluggable onto the hollow body , wherein in the attached state the shell of the lid projects upwards beyond the shell of the upwardly open hollow body , wherein the shell of the lid is provided with openings and the lid is upwardly closed, wherein the upper rim of the upwardly open hollow body is higher than the lower lid rim of the lid , wherein the lid has an inner wall in the area of each opening , wherein the upper inner edge of the inner wall is further inside and further up than the lower rim of the openings , and wherein the lid is plugged onto the upwardly open hollow body with its area adjoining below the openings , characterised in that multiple ducts are located in said area between the inner shell surface of the lid and the outer shell surface of the hollow body , wherein the first end of the ducts opens out into the inside of the hollow body and the lid below the upper inner edge of the inner wall of the lid , and wherein the second end of the ducts leads to the outer side of the device, and wherein the first end of the ducts is further up than the second end of the ducts . wherein the lid has an inner wall in the area of each opening , wherein the upper inner edge of the inner wall is further inside and further up than the lower rim of the openings , and wherein the lid is plugged onto the upwardly open hollow body with its area adjoining below the openings , characterised in that multiple ducts are located in said area between the inner shell surface of the lid and the outer shell surface of the hollow body , wherein the first end of the ducts opens out into the inside of the hollow body and the lid below the upper inner edge of the inner wall of the lid , and wherein the second end of the ducts leads to the outer side of the device, and wherein the first end of the ducts is further up than the second end of the ducts .
An infrared multispectral imaging sensor comprising: - a photosensitive back-side-illumination detector (DET) which is produced on a first substrate made of InP and having a back side and a front side , and which is formed of a matrix of pixels (105, P1, P2, P3) themselves produced in an InGaAs-based structure deposited by epitaxy on the front side of the first substrate made of InP, and - a filtering module (MF) which is formed of a matrix of elementary filters (λ1, λ2, λ3) replicating said matrix of pixels, and which is made up of a stack of a first mirror (MIR1) and a second mirror (MIR2) separated by a spacer membrane (SP), said filtering module defining a plurality of filtering cells (IF11, IF12, ..., IF44) each comprising at least two filters (FP1, FP2, FP3), characterized in that - said filtering module (MF) is formed on a second substrate (SUB) on which the first mirror (MIR1), the spacer membrane (SP), and the second mirror (MIR2) have been deposited in that order; - the second mirror (MIR2) is placed in contact with said first substrate , thus forming a hybrid multispectral imaging sensor which functions for wavelengths greater than 1000 nm and ranging up to 2200 nm; and - said first substrate made of InP having a thickness of less than 50 μm, preferably less than 30 μm. - a photosensitive back-side-illumination detector (DET) which is produced on a first substrate made of InP and having a back side and a front side , and which is formed of a matrix of pixels (105, P1, P2, P3) themselves produced in an InGaAs-based structure deposited by epitaxy on the front side of the first substrate made of InP, and - a filtering module (MF) which is formed of a matrix of elementary filters (λ1, λ2, λ3) replicating said matrix of pixels, and which is made up of a stack of a first mirror (MIR1) and a second mirror (MIR2) separated by a spacer membrane (SP), said filtering module defining a plurality of filtering cells (IF11, IF12, ..., IF44) each comprising at least two filters (FP1, FP2, FP3), characterized in that - said filtering module (MF) is formed on a second substrate (SUB) on which the first mirror (MIR1), the spacer membrane (SP), and the second mirror (MIR2) have been deposited in that order; - the second mirror (MIR2) is placed in contact with said first substrate , thus forming a hybrid multispectral imaging sensor which functions for wavelengths greater than 1000 nm and ranging up to 2200 nm; and - said first substrate made of InP having a thickness of less than 50 μm, preferably less than 30 μm.
An end effector for a picking robot, the end effector comprising: a shaft extending along a longitudinal axis between a proximal end and a distal end; a carriage configured to rotate about and to translate along an intermediate portion of the shaft between a proximal position and a distal position; a suction device coupled to the distal end of the shaft; and a plurality of fingers spaced radially about the carriage, each finger coupled to the carriage by a hinge and extending distally from the carriage, the plurality of fingers configured to envelop the intermediate portion of the shaft when the carriage is in the proximal position, the plurality of fingers further configured to envelop a target object space comprising the distal end of the shaft and the suction device when the carriage is in the distal position. a shaft extending along a longitudinal axis between a proximal end and a distal end; a carriage configured to rotate about and to translate along an intermediate portion of the shaft between a proximal position and a distal position; a suction device coupled to the distal end of the shaft; and a plurality of fingers spaced radially about the carriage, each finger coupled to the carriage by a hinge and extending distally from the carriage, the plurality of fingers configured to envelop the intermediate portion of the shaft when the carriage is in the proximal position, the plurality of fingers further configured to envelop a target object space comprising the distal end of the shaft and the suction device when the carriage is in the distal position.
An ink-jet-printer liquid composition comprising an organic solvent; a polymerizable compound having a weight-average molecular weight of from 1000 to 30000; a (meth)acrylic-modified polyorganosiloxane that has no polymerizable groups, that is a copolymer of a (meth)acrylate and a reactive polysiloxane having at least one of a polymerizable group or a mercapto group, and that has a weight-average molecular weight of from 20000 to 400000; and a photopolymerization initiator, wherein a content of the organic solvent relative to a total amount of the liquid composition is from 40 mass% to 80 mass%, and a content of the (meth)acrylic-modified polyorganosiloxane relative to the total amount of the liquid composition is from 0.1 mass% to 5.0 mass%.
Display device for a vehicle comprising a first and a second distinct display surface, the first display surface being semi-transparent and designed to create a virtual image obtained by reflection of an image produced by a display source , the second display surface being visible through the first display surface , said display device comprising a first display mode in which at least one first information item is displayed on the first display surface and at least one second information item is displayed on the second display surface , characterized in that it further comprises a second display mode in which the at least one first information item and the at least one second information item are displayed on the second display surface and in which the display source is switched off.
A power transfer assembly comprising an electrical machine capable of providing torque output, and a powered axle assembly , the powered axle assembly including a clutch assembly having a first one-way clutch configured to receive torque input from the electrical machine and a second one-way clutch configured to receive torque input from the electrical machine , wherein the first one-way clutch is further configured to transmit at least a first portion of the received torque input to a first half-axle , and wherein the second one-way clutch is further configured to transmit at least a second portion of the received torque input to a second half-axle , characterized in that a planetary gear reduction is interposed between the electrical machine and the clutch assembly having a hollow sun shaft rotationally fixed to an output of the electrical machine through which the first half-axle runs.
A method for manufacturing a field effect transistor, the method comprising the steps of: - providing a dummy gate structure on a substrate , said dummy gate structure comprising a gate dielectric layer and dummy gate electrode layer, said dummy gate structure being laterally defined by a gate trench defined by inner sidewalls of a set of spacers ; - laterally embedding said dummy gate structure by means of one or more embedding layers , said one or more embedding layers defining a front surface ; - removing said dummy gate electrode layer in between said inner sidewalls of said set of spacers ; - providing a final gate electrode layer replacing said dummy gate electrode layer in between said inner sidewalls of said set of spacers ; wherein the horizontal distance between the inner sidewalls of said spacers is smaller than 20 nm wherein providing a final gate electrode layer comprises - providing a continuous diffusion layer , said diffusion layer extending at least on top of said gate dielectric layer , on inner sidewalls of said set of spacers , and at least on a portion of said front surface ; - providing a metal layer comprising a metal on top of said diffusion layer , on said front surface and whereby said metal does not enter said gate trench; - applying an anneal step, said anneal step being adapted for driving diffusion of said metal of said metal layer into said diffusion layer , and for further diffusing said metal in said diffusion layer towards the portion of said diffusion layer in the area corresponding to the area of the gate dielectric ; - filling the area in between said inner sidewalls of said set of spacers with a final gate metal filling layer. - providing a dummy gate structure on a substrate , said dummy gate structure comprising a gate dielectric layer and dummy gate electrode layer, said dummy gate structure being laterally defined by a gate trench defined by inner sidewalls of a set of spacers ; - laterally embedding said dummy gate structure by means of one or more embedding layers , said one or more embedding layers defining a front surface ; - removing said dummy gate electrode layer in between said inner sidewalls of said set of spacers ; - providing a final gate electrode layer replacing said dummy gate electrode layer in between said inner sidewalls of said set of spacers ; - providing a continuous diffusion layer , said diffusion layer extending at least on top of said gate dielectric layer , on inner sidewalls of said set of spacers , and at least on a portion of said front surface ; - providing a metal layer comprising a metal on top of said diffusion layer , on said front surface and whereby said metal does not enter said gate trench; - applying an anneal step, said anneal step being adapted for driving diffusion of said metal of said metal layer into said diffusion layer , and for further diffusing said metal in said diffusion layer towards the portion of said diffusion layer in the area corresponding to the area of the gate dielectric ; - filling the area in between said inner sidewalls of said set of spacers with a final gate metal filling layer.
A whipstock assembly , comprising: a whipstock providing a ramped surface and a longitudinal groove defined in the ramped surface; a lead mill coupled to the whipstock with a shear bolt and having a slot defined therein; and a torque key movable between an extended position, where the torque key is partially positioned within both the slot and the longitudinal groove, and a retracted position, where the torque key retracts into the slot, wherein, when in the extended position, the torque key prevents the lead mill from rotating with respect to the whipstock. a whipstock providing a ramped surface and a longitudinal groove defined in the ramped surface; a lead mill coupled to the whipstock with a shear bolt and having a slot defined therein; and a torque key movable between an extended position, where the torque key is partially positioned within both the slot and the longitudinal groove, and a retracted position, where the torque key retracts into the slot, wherein, when in the extended position, the torque key prevents the lead mill from rotating with respect to the whipstock.
A method for receiving ultra-reliable and low latency communication URLLC data from time-frequency resources, applied to a receiving device, wherein the time-frequency resources comprise enhanced mobile broadband eMBB data and the URLLC data, the time-frequency resources further comprise an orthogonal frequency division multiplexing OFDM symbol, the OFDM symbol comprises an indication resource element RE, the indication RE indicates whether URLLC control information exists in the OFDM symbol, and the method comprises: when the indication RE indicates that the URLLC control information exists in the OFDM symbol, detecting the URLLC control information in the OFDM symbol; and receiving the URLLC data based on the detected URLLC control information, wherein that the indication RE indicates whether URLLC control information exists in the OFDM symbol comprises: when the indication RE comprises a first data symbol, the URLLC control information exists in the OFDM symbol; or when the indication RE comprises a second data symbol, the URLLC control information does not exist in the OFDM symbol; or wherein that the indication RE indicates whether URLLC control information exists in the OFDM symbol comprises: when a value of energy on the indication RE is greater than or equal to a preset threshold, the URLLC control information exists in the OFDM symbol; or when a value of energy on the indication RE is less than a preset threshold, the URLLC control information does not exist in the OFDM symbol. when the indication RE indicates that the URLLC control information exists in the OFDM symbol, detecting the URLLC control information in the OFDM symbol; and receiving the URLLC data based on the detected URLLC control information, wherein that the indication RE indicates whether URLLC control information exists in the OFDM symbol comprises: when the indication RE comprises a first data symbol, the URLLC control information exists in the OFDM symbol; or when the indication RE comprises a second data symbol, the URLLC control information does not exist in the OFDM symbol; or wherein that the indication RE indicates whether URLLC control information exists in the OFDM symbol comprises: when a value of energy on the indication RE is greater than or equal to a preset threshold, the URLLC control information exists in the OFDM symbol; or when a value of energy on the indication RE is less than a preset threshold, the URLLC control information does not exist in the OFDM symbol. when the indication RE comprises a first data symbol, the URLLC control information exists in the OFDM symbol; or when the indication RE comprises a second data symbol, the URLLC control information does not exist in the OFDM symbol; or wherein that the indication RE indicates whether URLLC control information exists in the OFDM symbol comprises: when a value of energy on the indication RE is greater than or equal to a preset threshold, the URLLC control information exists in the OFDM symbol; or when a value of energy on the indication RE is less than a preset threshold, the URLLC control information does not exist in the OFDM symbol.
A photodetector receiver for converting an optical signal to an electrical signal, comprising: a pair of photodiodes (PD1, PD 2) each having an optical-signal-receiving area on a surface thereof; and a mirror (Mirrors) positioned on said surface between the pair of photodiodes, with said mirror configured to redirect at least some of the light emitted from a remote light source (LED 1, LED 2) toward the optical-signal-receiving area of one of the pair of photodiodes (PD 1, PD 2) and configured to block at least some of the light emitted from the remote light source (LED 1, LED 2) from the optical-signal-receiving area of the other photodiode. a pair of photodiodes (PD1, PD 2) each having an optical-signal-receiving area on a surface thereof; and a mirror (Mirrors) positioned on said surface between the pair of photodiodes, with said mirror configured to redirect at least some of the light emitted from a remote light source (LED 1, LED 2) toward the optical-signal-receiving area of one of the pair of photodiodes (PD 1, PD 2) and configured to block at least some of the light emitted from the remote light source (LED 1, LED 2) from the optical-signal-receiving area of the other photodiode.
A gas barrier film, comprising a gas barrier layer formed on a base material, wherein the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen in the gas barrier layer measured by an XPS analysis, when the surface of the gas barrier layer that is in contact with the base material is designated as a base material side, and the opposite surface is designated as a surface side, the gas barrier layer includes: a first region in the relationship of the amount of oxygen > the amount of silicon > the amount of nitrogen; a second region in the relationship of the amount of silicon > the amount of oxygen > the amount of nitrogen; and a third region in the relationship of the amount of oxygen > the amount of silicon > the amount of nitrogen, from the surface side toward the base material side, wherein in the first region, the amount of nitrogen measured by a XPS analysis relative to the total amount (100 mol%) of the amount of nitrogen, the amount of silicon and the amount of oxygen, has a value in the range of 0.1 mol% to 10 mol%; the amount of silicon has a value in the range of 25 mol% to 49.9 mol%; and the amount of oxygen has a value in the range of 50 mol% to 74 mol%, wherein in the second region, the amount of nitrogen measured by an XPS analysis relative to the total amount (100 mol%) of the amount of nitrogen, the amount of silicon and the amount of oxygen, has a value in the range of 0.3 mol% to 30 mol%; the amount of silicon has a value in the range of 25 mol% to 50 mol%; and the amount of oxygen has a value in the range of 20 mol% to 70 mol%, and without having a region in which the amount of nitrogen is larger than the amount of oxygen. a first region in the relationship of the amount of oxygen > the amount of silicon > the amount of nitrogen; a second region in the relationship of the amount of silicon > the amount of oxygen > the amount of nitrogen; and a third region in the relationship of the amount of oxygen > the amount of silicon > the amount of nitrogen, from the surface side toward the base material side, wherein in the first region, the amount of nitrogen measured by a XPS analysis relative to the total amount (100 mol%) of the amount of nitrogen, the amount of silicon and the amount of oxygen, has a value in the range of 0.1 mol% to 10 mol%; the amount of silicon has a value in the range of 25 mol% to 49.9 mol%; and the amount of oxygen has a value in the range of 50 mol% to 74 mol%, wherein in the second region, the amount of nitrogen measured by an XPS analysis relative to the total amount (100 mol%) of the amount of nitrogen, the amount of silicon and the amount of oxygen, has a value in the range of 0.3 mol% to 30 mol%; the amount of silicon has a value in the range of 25 mol% to 50 mol%; and the amount of oxygen has a value in the range of 20 mol% to 70 mol%, and without having a region in which the amount of nitrogen is larger than the amount of oxygen.