A method of fabricating a passivated emitter and rear solar cell (PERC) via a room temperature wet chemical growth (RTWCG) process using a junction isolation and phosphosilicate glass (PSG)/borosilicate glass (BSG) etch solar cell processing tool, the method comprising: (A) placing a first RTWCG solution in a first reservoir coupled to a junction isolation process tank through a first chemical dosing unit of the processing tool; (B) placing at least a portion of a semiconductor substrate for the PERC , the semiconductor substrate being a silicon substrate, in the junction isolation process tank and allowing contact, in the junction isolation process tank, between the portion of the semiconductor substrate and the first RTWCG solution so as to grow a back side oxide passivation layer on a back side of the semiconductor substrate and thereby provide a back side passivated substrate, wherein the first RTWCG solution in the junction isolation process tank is delivered from the first reservoir by the first chemical dosing unit; (C) rinsing the back side passivated substrate in a first rinse tank of the processing tool using de-ionized (DI) water so as to provide a rinsed back side passivated substrate; (D) placing a second RTWCG solution in a second reservoir coupled to a PSG/BSG etch tank through a second chemical dosing unit of the processing tool; (E) placing the rinsed back side passivated substrate in the PSG/BSG etch tank and allowing contact, in the PSG/BSG etch tank, between the rinsed back side passivated substrate and the second RTWCG solution so as to grow a front side oxide passivation layer having a thickness of less than 50 nm on a front side of the substrate and thereby provide a front and back side passivated substrate, wherein the second RTWCG solution in the PSG/BSG etch tank is delivered from the second reservoir by the second chemical dosing unit; and (F) rinsing and drying the front and back side passivated substrate using a rinse and dry station coupled to the PSG/BSG etch tank. (A) placing a first RTWCG solution in a first reservoir coupled to a junction isolation process tank through a first chemical dosing unit of the processing tool; (B) placing at least a portion of a semiconductor substrate for the PERC , the semiconductor substrate being a silicon substrate, in the junction isolation process tank and allowing contact, in the junction isolation process tank, between the portion of the semiconductor substrate and the first RTWCG solution so as to grow a back side oxide passivation layer on a back side of the semiconductor substrate and thereby provide a back side passivated substrate, wherein the first RTWCG solution in the junction isolation process tank is delivered from the first reservoir by the first chemical dosing unit; (C) rinsing the back side passivated substrate in a first rinse tank of the processing tool using de-ionized (DI) water so as to provide a rinsed back side passivated substrate; (D) placing a second RTWCG solution in a second reservoir coupled to a PSG/BSG etch tank through a second chemical dosing unit of the processing tool; (E) placing the rinsed back side passivated substrate in the PSG/BSG etch tank and allowing contact, in the PSG/BSG etch tank, between the rinsed back side passivated substrate and the second RTWCG solution so as to grow a front side oxide passivation layer having a thickness of less than 50 nm on a front side of the substrate and thereby provide a front and back side passivated substrate, wherein the second RTWCG solution in the PSG/BSG etch tank is delivered from the second reservoir by the second chemical dosing unit; and (F) rinsing and drying the front and back side passivated substrate using a rinse and dry station coupled to the PSG/BSG etch tank. <EOS>