A method for bonding a first contact surface of a first substrate with a second contact surface of a second with the following sequence: - arrangement of a substrate stack , formed from the first substrate and the second substrate and aligned at the contact surfaces , between a first heating surface of a first heating system and a second heating surface of a second heating system , wherein a) the first heating surface is arranged facing a first surface of the first substrate , said first surface facing away from the first contact surface , b) the second heating surface is arranged facing a second surface of the second substrate , said the second surface facing away from the second contact surface , c) between the first surface and the first heating surface , there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface , there is a separation distance B > 0 μm, - heating the heating surfaces , wherein the substrates are spaced apart from the heating surfaces and the substrates are heated by infrared radiation from the heating surfaces , and during the heating the substrate stack converges with the heating surfaces by reducing the separation distances A and B to 0 μm, wherein the substrate stack is heated symmetrically relative to the plane of the contact surface of the substrates of the substrate stack, - forming bond between the first contact surface and the second contact surface by pressurisation of the substrate stack on the surfaces . - arrangement of a substrate stack , formed from the first substrate and the second substrate and aligned at the contact surfaces , between a first heating surface of a first heating system and a second heating surface of a second heating system , wherein a) the first heating surface is arranged facing a first surface of the first substrate , said first surface facing away from the first contact surface , b) the second heating surface is arranged facing a second surface of the second substrate , said the second surface facing away from the second contact surface , c) between the first surface and the first heating surface , there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface , there is a separation distance B > 0 μm, a) the first heating surface is arranged facing a first surface of the first substrate , said first surface facing away from the first contact surface , b) the second heating surface is arranged facing a second surface of the second substrate , said the second surface facing away from the second contact surface , c) between the first surface and the first heating surface , there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface , there is a separation distance B > 0 μm, - heating the heating surfaces , wherein the substrates are spaced apart from the heating surfaces and the substrates are heated by infrared radiation from the heating surfaces , and during the heating the substrate stack converges with the heating surfaces by reducing the separation distances A and B to 0 μm, wherein the substrate stack is heated symmetrically relative to the plane of the contact surface of the substrates of the substrate stack, - forming bond between the first contact surface and the second contact surface by pressurisation of the substrate stack on the surfaces . <EOS>