Acoustic structure comprising at least one acoustic resonator (Rs 1 , Rs 2 ) having a so-called transduction zone and at least one resonant frequency in a band of so-called operating frequencies and an integrated capacitor (Cc 1 , Cc 2 ), characterized in that said acoustic structure comprises: - a stack of layers, comprising at least a first and a second active layer of piezoelectric material or of ferroelectric material; - wherein the stack of layers is situated on the surface of a substrate; - said resonator being frequency tunable and being produced by a first subset of layers of the said stack; - the resonator formed by the first subset of layers comprising: o a first transduction zone having said first active layer of piezoelectric material and at least two electrodes and o a second so-called frequency-tuning zone having said second active layer of piezoelectric material or ferroelectric material and at least two electrodes; o said first zone being formed above said second zone and separated from it by an insulation layer; - said integrated capacitor being produced by a second subset of layers comprising said active layer and at least two electrodes (E Ccinf , E Ccsup ); - said first and second subsets of layers being distinguished by a modification of layers so as to have different resonant frequencies; - said structure comprising means of frequency-driving of the resonator which are linked to the electrodes of the resonator tuning zone and to the electrodes of the integrated capacitor; - the value of the integrated capacitor being equal or proportional to the value of the capacitor presented by the resonator tuning zone. - a stack of layers, comprising at least a first and a second active layer of piezoelectric material or of ferroelectric material; - wherein the stack of layers is situated on the surface of a substrate; - said resonator being frequency tunable and being produced by a first subset of layers of the said stack; - the resonator formed by the first subset of layers comprising: o a first transduction zone having said first active layer of piezoelectric material and at least two electrodes and o a second so-called frequency-tuning zone having said second active layer of piezoelectric material or ferroelectric material and at least two electrodes; o said first zone being formed above said second zone and separated from it by an insulation layer; o a first transduction zone having said first active layer of piezoelectric material and at least two electrodes and o a second so-called frequency-tuning zone having said second active layer of piezoelectric material or ferroelectric material and at least two electrodes; o said first zone being formed above said second zone and separated from it by an insulation layer; - said integrated capacitor being produced by a second subset of layers comprising said active layer and at least two electrodes (E Ccinf , E Ccsup ); - said first and second subsets of layers being distinguished by a modification of layers so as to have different resonant frequencies; - said structure comprising means of frequency-driving of the resonator which are linked to the electrodes of the resonator tuning zone and to the electrodes of the integrated capacitor; - the value of the integrated capacitor being equal or proportional to the value of the capacitor presented by the resonator tuning zone. <EOS>