An electroluminescence display comprising: a first pixel (P1) and a second pixel (P2) disposed on a substrate ; a first switching thin film transistor (ST) disposed in the first pixel, a first driving thin film transistor (DT) connected to the first switching thin film transistor and a first light emitting element connected to the first driving thin film transistor; a second switching thin film transistor disposed in the second pixel, a second driving thin film transistor connected to the second switching thin film transistor and a second light emitting element connected to the second driving thin film transistor; and a repair element (RP) overlapping the first light emitting element and the second light emitting element, wherein the repair element includes: a repair pattern (RA) overlapping a driving drain electrode (DD) of the second driving thin film transistor, the repair pattern formed of a first material on a first layer same as a switching semiconductor layer (SA) of the second switching thin film transistor; a repair electrode (RT) overlapping the repair pattern on a gate insulating layer covering the switching semiconductor layer and the repair pattern, the repair electrode formed of a second material on a second layer same as a gate electrode (SG) of the second switching thin film transistor; and a repair line (RL) disposed on an intermediate insulating layer (ILD) covering the repair electrode, the repair line connected to the repair electrode and to a drain electrode of the first driving thin film transistor. a first pixel (P1) and a second pixel (P2) disposed on a substrate ; a first switching thin film transistor (ST) disposed in the first pixel, a first driving thin film transistor (DT) connected to the first switching thin film transistor and a first light emitting element connected to the first driving thin film transistor; a second switching thin film transistor disposed in the second pixel, a second driving thin film transistor connected to the second switching thin film transistor and a second light emitting element connected to the second driving thin film transistor; and a repair element (RP) overlapping the first light emitting element and the second light emitting element, wherein the repair element includes: a repair pattern (RA) overlapping a driving drain electrode (DD) of the second driving thin film transistor, the repair pattern formed of a first material on a first layer same as a switching semiconductor layer (SA) of the second switching thin film transistor; a repair electrode (RT) overlapping the repair pattern on a gate insulating layer covering the switching semiconductor layer and the repair pattern, the repair electrode formed of a second material on a second layer same as a gate electrode (SG) of the second switching thin film transistor; and a repair line (RL) disposed on an intermediate insulating layer (ILD) covering the repair electrode, the repair line connected to the repair electrode and to a drain electrode of the first driving thin film transistor. a repair pattern (RA) overlapping a driving drain electrode (DD) of the second driving thin film transistor, the repair pattern formed of a first material on a first layer same as a switching semiconductor layer (SA) of the second switching thin film transistor; a repair electrode (RT) overlapping the repair pattern on a gate insulating layer covering the switching semiconductor layer and the repair pattern, the repair electrode formed of a second material on a second layer same as a gate electrode (SG) of the second switching thin film transistor; and a repair line (RL) disposed on an intermediate insulating layer (ILD) covering the repair electrode, the repair line connected to the repair electrode and to a drain electrode of the first driving thin film transistor. <EOS>