A semiconductor device comprising a termination structure, the device comprising: a semiconductor substrate (100B; 200B) having an active region comprising a trench MOS device and a termination region; a plurality of trench cells (111; 211) located in the termination region and spaced apart from one another in a direction from a boundary of the active region toward an edge of the semiconductor substrate; a termination trench (120; 220) formed in the termination region on a side of the plurality of trench cells remote from the active region; a first oxide layer (126; 226) lining the sidewalls and a bottom surface of the trench cells and the termination trench; a conductive spacer (122; 222) located adjacent a sidewall of the termination trench nearest the plurality of trench cells, the conductive spacer being in contact with the first oxide layer on said sidewall and bottom surface of the termination trench; conductive material (141; 242) filling the plurality of trench cells; a second oxide layer formed in the termination trench and contacting a sidewall of the conductive spacer; a first conductive layer (170; 270) formed on a backside surface of the semiconductor substrate; and a second conductive layer (165; 265) formed atop the active region and the termination region, a portion of the second conductive layer located in the termination trench defining a field plate; wherein the second conductive layer extends from the active layer as a continuous layer into the trench cells and at least a portion of the termination trench such that the second conductive layer, the conductive spacer and the field plate are electrically connected to one another. a semiconductor substrate (100B; 200B) having an active region comprising a trench MOS device and a termination region; a plurality of trench cells (111; 211) located in the termination region and spaced apart from one another in a direction from a boundary of the active region toward an edge of the semiconductor substrate; a termination trench (120; 220) formed in the termination region on a side of the plurality of trench cells remote from the active region; a first oxide layer (126; 226) lining the sidewalls and a bottom surface of the trench cells and the termination trench; a conductive spacer (122; 222) located adjacent a sidewall of the termination trench nearest the plurality of trench cells, the conductive spacer being in contact with the first oxide layer on said sidewall and bottom surface of the termination trench; conductive material (141; 242) filling the plurality of trench cells; a second oxide layer formed in the termination trench and contacting a sidewall of the conductive spacer; a first conductive layer (170; 270) formed on a backside surface of the semiconductor substrate; and a second conductive layer (165; 265) formed atop the active region and the termination region, a portion of the second conductive layer located in the termination trench defining a field plate; wherein the second conductive layer extends from the active layer as a continuous layer into the trench cells and at least a portion of the termination trench such that the second conductive layer, the conductive spacer and the field plate are electrically connected to one another. <EOS>