A method of manufacturing an electromechanical device having mechanical structures and an electrical contact , both overlying a substrate , wherein the mechanical structures reside in a sealed chamber , the method comprising: providing a substrate with a first sacrificial layer , an electrical contact and mechanical structures , wherein the electrical contact and the mechanical structures are both disposed on the first sacrificial layer ; depositing a second sacrificial layer over the mechanical structures and at least a portion of the electrical contact , directly covering the mechanical structures and the portion of the electrical contact ; forming an opening into the second sacrificial layer , wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact ; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via , wherein the first encapsulation layer consists of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer ; removing at least a portion of the first and second sacrificial layer to form the chamber , wherein a portion of the second sacrificial layer remains between the chamber and the contact via so that the contact via is disposed outside the chamber ; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer , wherein the second encapsulation layer consists of a semiconductor material and covers the vent and the contact via ; forming a trench in the first and the second encapsulation layer around the contact via ; and depositing an insulating material in the trench to electrically isolate the electrical contact . providing a substrate with a first sacrificial layer , an electrical contact and mechanical structures , wherein the electrical contact and the mechanical structures are both disposed on the first sacrificial layer ; depositing a second sacrificial layer over the mechanical structures and at least a portion of the electrical contact , directly covering the mechanical structures and the portion of the electrical contact ; forming an opening into the second sacrificial layer , wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact ; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via , wherein the first encapsulation layer consists of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer ; removing at least a portion of the first and second sacrificial layer to form the chamber , wherein a portion of the second sacrificial layer remains between the chamber and the contact via so that the contact via is disposed outside the chamber ; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer , wherein the second encapsulation layer consists of a semiconductor material and covers the vent and the contact via ; forming a trench in the first and the second encapsulation layer around the contact via ; and depositing an insulating material in the trench to electrically isolate the electrical contact . <EOS>