An organic photosensitive optoelectronic device comprising: two electrodes in superposed relation; a mixed organic acceptor layer and an organic donor layer located between the two electrodes, wherein the mixed organic acceptor layer comprises a mixture of an acceptor material and at least one acceptor sensitizer, wherein the acceptor material and the at least one acceptor sensitizer are chosen to satisfy the following conditions: - the at least one acceptor sensitizer has a lowest singlet excited state energy (E S-ASens ) greater than or equal to a lowest singlet excited state energy (E S-A ) of the acceptor material; - the at least one acceptor sensitizer has a lowest triplet excited state energy (E T-ASens ) greater than or equal to a lowest triplet excited state energy (E T-A ) of the acceptor material; - the at least one acceptor sensitizer has a reduction potential lower than or equal to a reduction potential of the acceptor material; and - if the at least one acceptor sensitizer and the acceptor material form a charge transfer (CT) state having a CT state energy, the CT state energy is greater than or equal to the lowest triplet excited state energy (E T-A ) of the acceptor material; the device further comprising an intermediate acceptor layer located between the mixed acceptor layer and the donor layer, wherein the intermediate acceptor layer consists of the acceptor material and forms a donor-acceptor heterojunction with the donor layer. two electrodes in superposed relation; a mixed organic acceptor layer and an organic donor layer located between the two electrodes, wherein the mixed organic acceptor layer comprises a mixture of an acceptor material and at least one acceptor sensitizer, wherein the acceptor material and the at least one acceptor sensitizer are chosen to satisfy the following conditions: - the at least one acceptor sensitizer has a lowest singlet excited state energy (E S-ASens ) greater than or equal to a lowest singlet excited state energy (E S-A ) of the acceptor material; - the at least one acceptor sensitizer has a lowest triplet excited state energy (E T-ASens ) greater than or equal to a lowest triplet excited state energy (E T-A ) of the acceptor material; - the at least one acceptor sensitizer has a reduction potential lower than or equal to a reduction potential of the acceptor material; and - if the at least one acceptor sensitizer and the acceptor material form a charge transfer (CT) state having a CT state energy, the CT state energy is greater than or equal to the lowest triplet excited state energy (E T-A ) of the acceptor material; - the at least one acceptor sensitizer has a lowest singlet excited state energy (E S-ASens ) greater than or equal to a lowest singlet excited state energy (E S-A ) of the acceptor material; - the at least one acceptor sensitizer has a lowest triplet excited state energy (E T-ASens ) greater than or equal to a lowest triplet excited state energy (E T-A ) of the acceptor material; - the at least one acceptor sensitizer has a reduction potential lower than or equal to a reduction potential of the acceptor material; and - if the at least one acceptor sensitizer and the acceptor material form a charge transfer (CT) state having a CT state energy, the CT state energy is greater than or equal to the lowest triplet excited state energy (E T-A ) of the acceptor material; the device further comprising an intermediate acceptor layer located between the mixed acceptor layer and the donor layer, wherein the intermediate acceptor layer consists of the acceptor material and forms a donor-acceptor heterojunction with the donor layer. <EOS>