An image sensor device, comprising: a plurality of pixel cells (1150; 1600) arranged in a pixel array; a control circuit for controlling an exposure phase and a sampling phase of the image sensor device; and a switching circuit (S1) for coupling a pixel power supply line to a first voltage (V1) in an exposure phase and to a second voltage (V2) in a sampling phase, the first voltage (V1) being higher than the second voltage (V2); wherein each of the plurality of pixel cells (1150; 1600) comprises: a photodiode (1114, PPD) in a semiconductor substrate , a first end of the photodiode (1114, PPD) coupled to a bias voltage (VAAS) through a shutter gate (1111, SGT) controlled by a global shutter signal (GS); a ground contact (G1) for coupling a second end of the photodiode (1114, PPD) to an electrical ground (VSS) through an electrical ground conductive line; a storage diode (1118, SD) in the semiconductor substrate and coupled to a second end of the photodiode (1114, PPD) through a first transfer gate (1112, TG1) controlled by a first transfer signal (TX1); and a floating diffusion region (1119, FD) in the semiconductor substrate and coupled to the storage diode (1118, PPD) through a second transfer gate (1113, TG2) controlled by a second transfer signal (TX2). a plurality of pixel cells (1150; 1600) arranged in a pixel array; a control circuit for controlling an exposure phase and a sampling phase of the image sensor device; and a switching circuit (S1) for coupling a pixel power supply line to a first voltage (V1) in an exposure phase and to a second voltage (V2) in a sampling phase, the first voltage (V1) being higher than the second voltage (V2); wherein each of the plurality of pixel cells (1150; 1600) comprises: a photodiode (1114, PPD) in a semiconductor substrate , a first end of the photodiode (1114, PPD) coupled to a bias voltage (VAAS) through a shutter gate (1111, SGT) controlled by a global shutter signal (GS); a ground contact (G1) for coupling a second end of the photodiode (1114, PPD) to an electrical ground (VSS) through an electrical ground conductive line; a storage diode (1118, SD) in the semiconductor substrate and coupled to a second end of the photodiode (1114, PPD) through a first transfer gate (1112, TG1) controlled by a first transfer signal (TX1); and a floating diffusion region (1119, FD) in the semiconductor substrate and coupled to the storage diode (1118, PPD) through a second transfer gate (1113, TG2) controlled by a second transfer signal (TX2). a photodiode (1114, PPD) in a semiconductor substrate , a first end of the photodiode (1114, PPD) coupled to a bias voltage (VAAS) through a shutter gate (1111, SGT) controlled by a global shutter signal (GS); a ground contact (G1) for coupling a second end of the photodiode (1114, PPD) to an electrical ground (VSS) through an electrical ground conductive line; a storage diode (1118, SD) in the semiconductor substrate and coupled to a second end of the photodiode (1114, PPD) through a first transfer gate (1112, TG1) controlled by a first transfer signal (TX1); and a floating diffusion region (1119, FD) in the semiconductor substrate and coupled to the storage diode (1118, PPD) through a second transfer gate (1113, TG2) controlled by a second transfer signal (TX2). <EOS>