A method for coupling a semiconductor device to a target substrate , wherein the semiconductor device includes a first surface and a first contact disposed on the first surface, the target substrate includes a second surface and a second contact disposed on the second surface, and the method comprises: forming a first insulating layer on the first surface, wherein the first insulating layer covers a portion of the first surface and exposes a distal portion of the first contact; forming a second insulating layer on the second surface, wherein the second insulating layer covers a portion of the second surface and exposes a distal portion of the second contact; exposing the first insulating layer and the second insulating layer to a plasma that activates each of the first insulating layer and the second insulating layer; positioning the semiconductor device proximate to the target substrate to form a spatial alignment of the first contact with the second contact, wherein the activated first and second insulating layers are adjacent and opposed layers, and the exposed distal portion of the second contact is adjacent the exposed distal portion of the first contact; forming a mechanical coupling between the semiconductor device and the target substrate by chemically bonding the activated first insulating layer to the activated second insulating layer; and forming an electrical coupling between the semiconductor device and the target substrate by electrically bonding the exposed distal portion of the second contact to the adjacent distal portion of the first contact via inducing thermal energy with associated thermal effects that are localized to the first and second contacts, wherein the mechanical coupling between the semiconductor device and the target substrate mechanically stabilizes the electrical coupling. forming a first insulating layer on the first surface, wherein the first insulating layer covers a portion of the first surface and exposes a distal portion of the first contact; forming a second insulating layer on the second surface, wherein the second insulating layer covers a portion of the second surface and exposes a distal portion of the second contact; exposing the first insulating layer and the second insulating layer to a plasma that activates each of the first insulating layer and the second insulating layer; positioning the semiconductor device proximate to the target substrate to form a spatial alignment of the first contact with the second contact, wherein the activated first and second insulating layers are adjacent and opposed layers, and the exposed distal portion of the second contact is adjacent the exposed distal portion of the first contact; forming a mechanical coupling between the semiconductor device and the target substrate by chemically bonding the activated first insulating layer to the activated second insulating layer; and forming an electrical coupling between the semiconductor device and the target substrate by electrically bonding the exposed distal portion of the second contact to the adjacent distal portion of the first contact via inducing thermal energy with associated thermal effects that are localized to the first and second contacts, wherein the mechanical coupling between the semiconductor device and the target substrate mechanically stabilizes the electrical coupling. <EOS>