A light emitting device comprising: a first conductivity type semiconductor layer ; a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the active layer comprising quantum well layers (QW1 ∼ QW3) and quantum barrier layers (QB1∼QB2), wherein each of the quantum barrier layers comprises first barrier layers (TB1 and TB2, TB3 and TB4) and a second barrier layer (MB1,MB2) disposed between the first barrier layers, and energy bandgaps of the second barrier layers (MB1,MB2) are larger than energy bandgaps of the quantum well layers (QW1 ∼ QW3) and smaller than energy bandgaps of the first barrier layers (TB1 and TB2, TB3 and TB4), wherein the first conductivity type semiconductor layer is formed of a semiconductor material having the empirical formula In x Al y Ga (1-x-y) N (0<x≤1, 0≤y≤1, 0≤x+y≤1), and the second conductivity type semiconductor layer is formed of a semiconductor material having the empirical formula: In x Al y Ga (1-x-y) N (0<x≤1, 0≤y≤1, 0≤x+y≤1), wherein the first barrier layers are InGaN, and the second barriers are InGaN, wherein the quantum well layers are InGaN, wherein the thickness of the first barrier layers is 1nm or less and the thickness of the second barrier layers is 5nm or less, wherein the energy bandgaps of the first barrier layers are larger than an energy bandgap of the first conductivity type semiconductor layer and an energy bandgap of the second conductivity type semiconductor layer, and wherein an indium content of the quantum well layers is between 14 % and 15 %, an indium content of the first barrier layers is less than 5%, and an indium content of the second barrier layers is between 5 % and 10 %. a first conductivity type semiconductor layer ; a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the active layer comprising quantum well layers (QW1 ∼ QW3) and quantum barrier layers (QB1∼QB2), wherein each of the quantum barrier layers comprises first barrier layers (TB1 and TB2, TB3 and TB4) and a second barrier layer (MB1,MB2) disposed between the first barrier layers, and energy bandgaps of the second barrier layers (MB1,MB2) are larger than energy bandgaps of the quantum well layers (QW1 ∼ QW3) and smaller than energy bandgaps of the first barrier layers (TB1 and TB2, TB3 and TB4), wherein the first conductivity type semiconductor layer is formed of a semiconductor material having the empirical formula In x Al y Ga (1-x-y) N (0<x≤1, 0≤y≤1, 0≤x+y≤1), and the second conductivity type semiconductor layer is formed of a semiconductor material having the empirical formula: In x Al y Ga (1-x-y) N (0<x≤1, 0≤y≤1, 0≤x+y≤1), wherein the first barrier layers are InGaN, and the second barriers are InGaN, wherein the quantum well layers are InGaN, wherein the thickness of the first barrier layers is 1nm or less and the thickness of the second barrier layers is 5nm or less, wherein the energy bandgaps of the first barrier layers are larger than an energy bandgap of the first conductivity type semiconductor layer and an energy bandgap of the second conductivity type semiconductor layer, and wherein an indium content of the quantum well layers is between 14 % and 15 %, an indium content of the first barrier layers is less than 5%, and an indium content of the second barrier layers is between 5 % and 10 %. <EOS>