Transistor comprising: a substate of a first doping type; an epitaxial layer of the first doping type above the substrate ; a channel layer of a second doping type, different from the first doping type, above the epitaxial layer ; a multiplicity of trenches in the channel layer which extend into the epitaxial layer , each have a gate electrode situated within the trenches and are surrounded by a source terminal of the first doping type above the channel layer ; a multiplicity of screening regions of the second doping type, which are arranged below the gate electrodes ; wherein the screening regions below the trenches form with one another a group of screening regions and a plurality of screening regions are together routed to terminals for the screening regions for contact-connection; wherein a lattice is formed from first cells , wherein the first cells are formed from the channel terminal of the second doping type for contact-connecting the channel layer and a source terminal surrounding the channel terminal , wherein the first cells are surrounded by the trenches , wherein the lattice has gaps in which second cells are embedded, said second cells having the terminals for the screening regions for contact-connecting the group of screening regions; wherein the second cells have a diode terminal of the second doping type which is short-circuited to the source, as a result of which an integrated diode connected in parallel with the transistor is provided, wherein the diode is formed at the boundary between the channel layer and the epitaxial layer in the region of the second cells . a substate of a first doping type; an epitaxial layer of the first doping type above the substrate ; a channel layer of a second doping type, different from the first doping type, above the epitaxial layer ; a multiplicity of trenches in the channel layer which extend into the epitaxial layer , each have a gate electrode situated within the trenches and are surrounded by a source terminal of the first doping type above the channel layer ; a multiplicity of screening regions of the second doping type, which are arranged below the gate electrodes ; wherein the screening regions below the trenches form with one another a group of screening regions and a plurality of screening regions are together routed to terminals for the screening regions for contact-connection; wherein a lattice is formed from first cells , wherein the first cells are formed from the channel terminal of the second doping type for contact-connecting the channel layer and a source terminal surrounding the channel terminal , wherein the first cells are surrounded by the trenches , wherein the lattice has gaps in which second cells are embedded, said second cells having the terminals for the screening regions for contact-connecting the group of screening regions; wherein the second cells have a diode terminal of the second doping type which is short-circuited to the source, as a result of which an integrated diode connected in parallel with the transistor is provided, wherein the diode is formed at the boundary between the channel layer and the epitaxial layer in the region of the second cells . <EOS>