A photovoltaic cell comprising: a base substrate comprising silicon and including an upper doped region ; a coating layer disposed on said upper doped region of said base substrate and having an outer surface ; a plurality of fingers spaced from each other and disposed in said coating layer and each of said fingers having a lower portion in electrical contact with said upper doped region of said base substrate , and an upper portion opposite said lower portion extending outwardly through said outer surface of said coating layer , with each of said fingers comprising a first metal present in each of said fingers in a majority amount; a busbar spaced from said upper doped region of said base substrate such that said upper doped region of said base substrate is free of physical contact with said busbar , with said busbar in electrical contact with said upper portions of said fingers and comprising a second metal present in said busbar in a majority amount, wherein said upper doped region of said base substrate is in electrical communication with said busbar via said fingers , and characterized in that it further comprises: i) a plurality of supplemental fingers disposed over and in electrical contact with said plurality of fingers , with each of said supplemental fingers comprising silver or copper present in each of said supplemental fingers in a majority amount, and wherein said supplemental fingers are different from said plurality of fingers ; ii) a supplemental busbar disposed over and in electrical contract with said busbar , and wherein said supplemental busbar is different from said busbar ; or iii) both i) and ii). a base substrate comprising silicon and including an upper doped region ; a coating layer disposed on said upper doped region of said base substrate and having an outer surface ; a plurality of fingers spaced from each other and disposed in said coating layer and each of said fingers having a lower portion in electrical contact with said upper doped region of said base substrate , and an upper portion opposite said lower portion extending outwardly through said outer surface of said coating layer , with each of said fingers comprising a first metal present in each of said fingers in a majority amount; a busbar spaced from said upper doped region of said base substrate such that said upper doped region of said base substrate is free of physical contact with said busbar , with said busbar in electrical contact with said upper portions of said fingers and comprising a second metal present in said busbar in a majority amount, wherein said upper doped region of said base substrate is in electrical communication with said busbar via said fingers , and characterized in that it further comprises: i) a plurality of supplemental fingers disposed over and in electrical contact with said plurality of fingers , with each of said supplemental fingers comprising silver or copper present in each of said supplemental fingers in a majority amount, and wherein said supplemental fingers are different from said plurality of fingers ; ii) a supplemental busbar disposed over and in electrical contract with said busbar , and wherein said supplemental busbar is different from said busbar ; or iii) both i) and ii). i) a plurality of supplemental fingers disposed over and in electrical contact with said plurality of fingers , with each of said supplemental fingers comprising silver or copper present in each of said supplemental fingers in a majority amount, and wherein said supplemental fingers are different from said plurality of fingers ; ii) a supplemental busbar disposed over and in electrical contract with said busbar , and wherein said supplemental busbar is different from said busbar ; or iii) both i) and ii). <EOS>