A semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer , a second conductive semiconductor layer , and an active layer ; a first electrode provided on a first surface of the first conductive semiconductor layer ; a second electrode provided on a first surface of the second conductive semiconductor layer , the active layer being provided between the first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer that is opposite to the first surface of the second conductive semiconductor layer ; a first insulation layer provided on the first surface of the first conductive semiconductor layer , the first surface of the second conductive semiconductor layer , and a side surface of the active layer , the first insulation layer and the first electrode being separated on the first surface of the first conductive semiconductor layer ; and a first cover electrode provided on the first electrode and the first surface of the first conductive semiconductor layer , a second cover electrode provided on the second electrode ; and a second insulation layer provided on the first cover electrode , the second cover electrode , and the first insulation layer , and wherein the first cover electrode overlaps the first insulation layer in a first direction perpendicular to the first surface of the first conductive semiconductor layer , wherein the second insulation layer includes a first opening exposing the first cover electrode and a second opening exposing the second cover electrode , wherein the first electrode includes a plurality of first grooves (151a-1, 151a-2 151a-3, 151a-4) provided on an upper surface of the first electrode and a protrusion portion surrounding the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4), and wherein the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4) are spaced from each other a semiconductor structure including a first conductive semiconductor layer , a second conductive semiconductor layer , and an active layer ; a first electrode provided on a first surface of the first conductive semiconductor layer ; a second electrode provided on a first surface of the second conductive semiconductor layer , the active layer being provided between the first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer that is opposite to the first surface of the second conductive semiconductor layer ; a first insulation layer provided on the first surface of the first conductive semiconductor layer , the first surface of the second conductive semiconductor layer , and a side surface of the active layer , the first insulation layer and the first electrode being separated on the first surface of the first conductive semiconductor layer ; and a first cover electrode provided on the first electrode and the first surface of the first conductive semiconductor layer , a second cover electrode provided on the second electrode ; and a second insulation layer provided on the first cover electrode , the second cover electrode , and the first insulation layer , and wherein the first cover electrode overlaps the first insulation layer in a first direction perpendicular to the first surface of the first conductive semiconductor layer , wherein the second insulation layer includes a first opening exposing the first cover electrode and a second opening exposing the second cover electrode , wherein the first electrode includes a plurality of first grooves (151a-1, 151a-2 151a-3, 151a-4) provided on an upper surface of the first electrode and a protrusion portion surrounding the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4), and wherein the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4) are spaced from each other <EOS>