An imaging device, comprising: a semiconductor substrate ; a first pixel including: a first photoelectric converter above the semiconductor substrate, including a first electrode , a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including: a second photoelectric converter above the semiconductor substrate, including a third electrode , a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein an area of the second electrode is greater than an area of the fourth electrode , both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in a plan view, and characterized in that neither the first charge accumulation region nor the second charge accumulation region overlap with the fourth electrode in the plan view. a semiconductor substrate ; a first pixel including: a first photoelectric converter above the semiconductor substrate, including a first electrode , a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a first photoelectric converter above the semiconductor substrate, including a first electrode , a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including: a second photoelectric converter above the semiconductor substrate, including a third electrode , a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein a second photoelectric converter above the semiconductor substrate, including a third electrode , a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein an area of the second electrode is greater than an area of the fourth electrode , both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in a plan view, and characterized in that neither the first charge accumulation region nor the second charge accumulation region overlap with the fourth electrode in the plan view. <EOS>