A semiconductor device comprising: a substrate having a first edge and a second edge opposing each other in a first direction and a third edge and a fourth edge opposing each other in a second direction which intersects with the first direction; a plurality of first semiconductor regions extending in the first direction and arranged in the second direction on the substrate , and having a first conductivity; a plurality of second semiconductor regions extending in the first direction and arranged at the edges of the first semiconductor regions in the second direction within the first semiconductor region , and having a second conductivity; a plurality of control electrodes arranged between adjacent second semiconductor regions , the control electrodes extending in the first direction and being arranged in rows spaced in the second direction; an interlayer insulation film including a plurality of extension parts , connection parts , and apertures , wherein the extension parts extend in the first direction and cover the control electrodes arranged under themselves; the connection parts connect adjacent extension parts ; and the apertures expose at least a part of a surface area of the first semiconductor regions and at least a part of a surface area of the second semiconductor regions , and have a shape defined by the extension parts and the connection parts , and are arranged in rows along the first direction; and an electrode arranged on the interlayer insulation film and electrically connecting the first semiconductor regions and the second semiconductor regions via the apertures of the interlayer insulation film , wherein the control electrodes are formed in a stripe shape in the first direction and the interlayer insulation film is formed in a mesh shape within a bonding area of the electrode . a substrate having a first edge and a second edge opposing each other in a first direction and a third edge and a fourth edge opposing each other in a second direction which intersects with the first direction; a plurality of first semiconductor regions extending in the first direction and arranged in the second direction on the substrate , and having a first conductivity; a plurality of second semiconductor regions extending in the first direction and arranged at the edges of the first semiconductor regions in the second direction within the first semiconductor region , and having a second conductivity; a plurality of control electrodes arranged between adjacent second semiconductor regions , the control electrodes extending in the first direction and being arranged in rows spaced in the second direction; an interlayer insulation film including a plurality of extension parts , connection parts , and apertures , wherein the extension parts extend in the first direction and cover the control electrodes arranged under themselves; the connection parts connect adjacent extension parts ; and the apertures expose at least a part of a surface area of the first semiconductor regions and at least a part of a surface area of the second semiconductor regions , and have a shape defined by the extension parts and the connection parts , and are arranged in rows along the first direction; and an electrode arranged on the interlayer insulation film and electrically connecting the first semiconductor regions and the second semiconductor regions via the apertures of the interlayer insulation film , wherein the control electrodes are formed in a stripe shape in the first direction and the interlayer insulation film is formed in a mesh shape within a bonding area of the electrode . <EOS>