A semiconductor device , comprising: a substrate (B); a semiconductor element (S) that is mounted on the substrate (B); a first lead terminal (L1) that is connected to a conductor layer (D1) on the substrate (B) via a conductive bonding material (H1); and a sealing portion that seals the substrate (B) and the semiconductor element (S), wherein the first lead terminal (L1) includes: a main body portion that arranged in the sealing portion , a first arch portion (L1b) that is connected to the main body portion and bent so as to project upward, and a first bent portion (L1a) that is connected to the first arch portion (L1b) and bent so as to project downward, characterized in that notches (L1k) recessed in a width direction of the first bent portion are formed on both side surfaces of the first bent portion in the width direction, and wherein the first lead terminal (L1) is connected to the conductor layer (D1) on the substrate (B), in a state where, a lower end of the first bent portion (L1a) comes into contact with the conductor layer (D1) on the substrate (B), and the conductive bonding material (H1) arranged on a surface of the conductor layer (D1) is bonded to a lower surface of the first bent portion (L1a) and flows into the notches (L1k). a substrate (B); a semiconductor element (S) that is mounted on the substrate (B); a first lead terminal (L1) that is connected to a conductor layer (D1) on the substrate (B) via a conductive bonding material (H1); and a sealing portion that seals the substrate (B) and the semiconductor element (S), wherein the first lead terminal (L1) includes: a main body portion that arranged in the sealing portion , a first arch portion (L1b) that is connected to the main body portion and bent so as to project upward, and a first bent portion (L1a) that is connected to the first arch portion (L1b) and bent so as to project downward, characterized in that notches (L1k) recessed in a width direction of the first bent portion are formed on both side surfaces of the first bent portion in the width direction, and wherein the first lead terminal (L1) is connected to the conductor layer (D1) on the substrate (B), in a state where, a lower end of the first bent portion (L1a) comes into contact with the conductor layer (D1) on the substrate (B), and the conductive bonding material (H1) arranged on a surface of the conductor layer (D1) is bonded to a lower surface of the first bent portion (L1a) and flows into the notches (L1k). a main body portion that arranged in the sealing portion , a first arch portion (L1b) that is connected to the main body portion and bent so as to project upward, and a first bent portion (L1a) that is connected to the first arch portion (L1b) and bent so as to project downward, characterized in that notches (L1k) recessed in a width direction of the first bent portion are formed on both side surfaces of the first bent portion in the width direction, and wherein the first lead terminal (L1) is connected to the conductor layer (D1) on the substrate (B), in a state where, a lower end of the first bent portion (L1a) comes into contact with the conductor layer (D1) on the substrate (B), and the conductive bonding material (H1) arranged on a surface of the conductor layer (D1) is bonded to a lower surface of the first bent portion (L1a) and flows into the notches (L1k). <EOS>