A photodiode device, comprising: - a substrate of semiconductor material having a surface , - a doped region of a first type of electrical conductivity in the substrate , - a contact region of the first type of electrical conductivity having a higher doping concentration than the doped region , the contact region being arranged at the surface on top of the doped region , the contact region being contiguous with the doped region and provided with one of an anode or cathode connection , - a further doped region , which is arranged in the substrate adjacent to the doped region and comprises an area of the surface , the further doped region being of the second type of electrical conductivity and forming a pn junction with the doped region , the doped region and the contact region surrounding the further doped region , and the contact region extending into the further doped region , - a further contact region of a second type of electrical conductivity that is opposite to the first type of electrical conductivity, the further contact region being arranged at the surface as a doped region within the further doped region and contiguous with the further doped region and provided with the other one of the anode or cathode connection , - the contact region surrounding an area of the surface that is entirely formed by the semiconductor material of the substrate , this area covering the further contact region , - a lateral pn junction formed at the surface by a boundary between the contact region and the further doped region , - a field electrode covering the lateral pn junction and a portion of the surface between the contact region and the further contact region , and being separated from the surface by a dielectric material , and - the field electrode being provided with a further electrical connection separate from the anode and cathode connections . - a substrate of semiconductor material having a surface , - a doped region of a first type of electrical conductivity in the substrate , - a contact region of the first type of electrical conductivity having a higher doping concentration than the doped region , the contact region being arranged at the surface on top of the doped region , the contact region being contiguous with the doped region and provided with one of an anode or cathode connection , - a further doped region , which is arranged in the substrate adjacent to the doped region and comprises an area of the surface , the further doped region being of the second type of electrical conductivity and forming a pn junction with the doped region , the doped region and the contact region surrounding the further doped region , and the contact region extending into the further doped region , - a further contact region of a second type of electrical conductivity that is opposite to the first type of electrical conductivity, the further contact region being arranged at the surface as a doped region within the further doped region and contiguous with the further doped region and provided with the other one of the anode or cathode connection , - the contact region surrounding an area of the surface that is entirely formed by the semiconductor material of the substrate , this area covering the further contact region , - a lateral pn junction formed at the surface by a boundary between the contact region and the further doped region , - a field electrode covering the lateral pn junction and a portion of the surface between the contact region and the further contact region , and being separated from the surface by a dielectric material , and - the field electrode being provided with a further electrical connection separate from the anode and cathode connections . <EOS>