A method of forming a CCD image sensor including a lateral overflow drain and a channel stop associated with a pixel of an image sensor, the pixel comprising one or more shift elements for the accumulation of charge carriers in response to exposure to light, the method comprising the following steps in the following order: forming a first mask layer over an insulating layer disposed on a semiconductor layer of second conductivity type; removing a portion of the first mask layer and a first portion of the insulating layer disposed below said portion of the first mask layer such that a second portion of the insulating layer remains as protection layer for the surface of the semiconductor layer , thereby forming a first opening ; forming a second mask layer over the first mask layer and the first opening ; removing a portion of the second mask layer to form a second opening disposed within and sharing a boundary with the first opening such that a part of the first opening remains covered by said second mask layer ; introducing dopants having a first conductivity type opposite to the second conductivity type into the semiconductor layer through only the second opening , thereby forming the lateral overflow drain for draining excess charge carriers from the one or more shift elements; removing the second mask layer , and introducing dopants having said second conductivity type into the semiconductor layer through the first opening , thereby forming the channel stop for preventing movement of charge carriers from the one or more shift elements into a second pixel adjacent to the pixel, wherein (i) the lateral overflow drain is disposed within and shares a boundary with the channel stop and (ii) the lateral overflow drain is formed before the channel stop is formed. forming a first mask layer over an insulating layer disposed on a semiconductor layer of second conductivity type; removing a portion of the first mask layer and a first portion of the insulating layer disposed below said portion of the first mask layer such that a second portion of the insulating layer remains as protection layer for the surface of the semiconductor layer , thereby forming a first opening ; forming a second mask layer over the first mask layer and the first opening ; removing a portion of the second mask layer to form a second opening disposed within and sharing a boundary with the first opening such that a part of the first opening remains covered by said second mask layer ; introducing dopants having a first conductivity type opposite to the second conductivity type into the semiconductor layer through only the second opening , thereby forming the lateral overflow drain for draining excess charge carriers from the one or more shift elements; removing the second mask layer , and introducing dopants having said second conductivity type into the semiconductor layer through the first opening , thereby forming the channel stop for preventing movement of charge carriers from the one or more shift elements into a second pixel adjacent to the pixel, wherein (i) the lateral overflow drain is disposed within and shares a boundary with the channel stop and (ii) the lateral overflow drain is formed before the channel stop is formed. <EOS>