A Metal-Insulator-Metal type capacitor structure comprising: - a substrate , - a first electrically insulating layer disposed on the substrate , - a lower electrode disposed on the first electrically insulating layer , - a metal layer disposed on the lower electrode and structured in that it includes a plurality of pores, said pores being electrically insulated from the rest of the structured metal layer in which they are made by an electrically insulating peripheral oxide layer , said electrically insulating peripheral oxide layer constituting an insulating matrix of pores obtained by anodic etching or by anodization, - a Metal-Insulator-Metal type capacitor (4; 41) comprising a first conductive layer disposed on the structured metal layer and inside the pores of said structured metal layer , a dielectric layer covering the first conductive layer , a second conductive layer covering the dielectric layer , each concerned pore including the first conductive layer and the second conductive layer separated by the dielectric layer , - an upper electrode disposed on the Metal-Insulator-Metal type capacitor , - a second insulating layer electrically disposed on the upper electrode , in which: - the first conductive layer located inside the pores of the structured metal layer is in contact with the lower electrode , - the second conductive layer located inside the pores of the structured metal layer is in contact with the upper electrode , and - the lower electrode comprises a metal layer and an etching barrier layer , said etching barrier layer being resistant to etching by anodization and being located between the metal layer of the lower electrode and the insulating pore matrix . - a substrate , - a first electrically insulating layer disposed on the substrate , - a lower electrode disposed on the first electrically insulating layer , - a metal layer disposed on the lower electrode and structured in that it includes a plurality of pores, said pores being electrically insulated from the rest of the structured metal layer in which they are made by an electrically insulating peripheral oxide layer , said electrically insulating peripheral oxide layer constituting an insulating matrix of pores obtained by anodic etching or by anodization, - a Metal-Insulator-Metal type capacitor (4; 41) comprising a first conductive layer disposed on the structured metal layer and inside the pores of said structured metal layer , a dielectric layer covering the first conductive layer , a second conductive layer covering the dielectric layer , each concerned pore including the first conductive layer and the second conductive layer separated by the dielectric layer , - an upper electrode disposed on the Metal-Insulator-Metal type capacitor , - a second insulating layer electrically disposed on the upper electrode , - the first conductive layer located inside the pores of the structured metal layer is in contact with the lower electrode , - the second conductive layer located inside the pores of the structured metal layer is in contact with the upper electrode , and - the lower electrode comprises a metal layer and an etching barrier layer , said etching barrier layer being resistant to etching by anodization and being located between the metal layer of the lower electrode and the insulating pore matrix . <EOS>