A transistor comprising: a substrate ; an electrically conductive material layer defining a gate; characterized by a first electrically insulating material layer in contact with the electrically conductive material layer , the electrically conductive material layer being positioned between the substrate and the first electrically insulating material layer , wherein the first electrically insulating material layer includes an overhanging position that extends beyond the electrically conductive material layer such that the first electrically insulating material layer and the electrically conductive material layer define a reentrant profile ; a second electrically insulating material layer that conforms to the reentrant profile , the second electrically insulating material layer being in contact with the gate and having a consistent thickness at least in a region where the reentrant profile and the gate are located; a semiconductor material layer that conforms to the reentrant profile , the semiconductor material layer being in contact with the second electrically insulating material layer and having a consistent thickness at least in a region where the reentrant profile and the gate are located, wherein a portion of the semiconductor material layer extends over the first electrically insulating material layer ; a first electrode in contact with the semiconductor material layer over a region of the substrate beyond the overhanging portion of the first electrically insulating material layer ; and a second electrode in contact with the portion of the semiconductor material layer extending over the first electrically insulating material layer ; wherein one of the first electrode and the second electrode defines a source and the other of the first electrode and the second electrode defines a drain. a substrate ; an electrically conductive material layer defining a gate; characterized by a first electrically insulating material layer in contact with the electrically conductive material layer , the electrically conductive material layer being positioned between the substrate and the first electrically insulating material layer , wherein the first electrically insulating material layer includes an overhanging position that extends beyond the electrically conductive material layer such that the first electrically insulating material layer and the electrically conductive material layer define a reentrant profile ; a second electrically insulating material layer that conforms to the reentrant profile , the second electrically insulating material layer being in contact with the gate and having a consistent thickness at least in a region where the reentrant profile and the gate are located; a semiconductor material layer that conforms to the reentrant profile , the semiconductor material layer being in contact with the second electrically insulating material layer and having a consistent thickness at least in a region where the reentrant profile and the gate are located, wherein a portion of the semiconductor material layer extends over the first electrically insulating material layer ; a first electrode in contact with the semiconductor material layer over a region of the substrate beyond the overhanging portion of the first electrically insulating material layer ; and a second electrode in contact with the portion of the semiconductor material layer extending over the first electrically insulating material layer ; wherein one of the first electrode and the second electrode defines a source and the other of the first electrode and the second electrode defines a drain. <EOS>