A single-chip magnetic field sensor bridge, comprising: a substrate ; deposited on said substrate a Wheatstone half-bridge or a Wheatstone quasi-bridge, said Wheatstone half-bridge or quasi-bridge including: a reference arm (53, R1), which includes at least two row/column reference element strings , each reference element string includes one or more identical sensing elements electrically interconnected; further including a sensing arm (52, S1), which includes at least two row/column sense element strings , each sense element string includes one or more identical sensing elements electrically interconnected; the reference and the sensing arms have the same number of rows/columns, wherein the sensor bridge comprises interleaved reference element strings and sensing element strings, and along the horizontal/vertical spacing directions, the string spacing (L) between the adjacent reference element strings and the adjacent sensing element strings is the same; at least three shielding structures , with a gap between adjacent shielding structures, each reference element string is provided beneath a corresponding shielding structure, each sensing element string is located in a gap between adjacent shielding structures, and further including multiple input and output wire bond pads . a substrate ; deposited on said substrate a Wheatstone half-bridge or a Wheatstone quasi-bridge, said Wheatstone half-bridge or quasi-bridge including: a reference arm (53, R1), which includes at least two row/column reference element strings , each reference element string includes one or more identical sensing elements electrically interconnected; further including a sensing arm (52, S1), which includes at least two row/column sense element strings , each sense element string includes one or more identical sensing elements electrically interconnected; the reference and the sensing arms have the same number of rows/columns, wherein the sensor bridge comprises interleaved reference element strings and sensing element strings, and along the horizontal/vertical spacing directions, the string spacing (L) between the adjacent reference element strings and the adjacent sensing element strings is the same; at least three shielding structures , with a gap between adjacent shielding structures, each reference element string is provided beneath a corresponding shielding structure, each sensing element string is located in a gap between adjacent shielding structures, and further including multiple input and output wire bond pads . a reference arm (53, R1), which includes at least two row/column reference element strings , each reference element string includes one or more identical sensing elements electrically interconnected; further including a sensing arm (52, S1), which includes at least two row/column sense element strings , each sense element string includes one or more identical sensing elements electrically interconnected; the reference and the sensing arms have the same number of rows/columns, wherein the sensor bridge comprises interleaved reference element strings and sensing element strings, and along the horizontal/vertical spacing directions, the string spacing (L) between the adjacent reference element strings and the adjacent sensing element strings is the same; at least three shielding structures , with a gap between adjacent shielding structures, each reference element string is provided beneath a corresponding shielding structure, each sensing element string is located in a gap between adjacent shielding structures, and further including multiple input and output wire bond pads . <EOS>