A solid-state image pickup device , comprising: a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor of the chalcopyrite structure, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns, wherein the pixel array region has a voltage application pixel on an outermost circumference of the pixel array region or on an outer side with respect to an effective pixel region , in which ordinary pixels that output a pixel signal according to a received light amount are disposed, of the pixel array region , wherein the voltage application pixel is one of the pixels configured such that a fixed voltage (Va) is applied between an upper electrode of the photoelectric conversion unit and an electrode for extracting charge generated in the photoelectric conversion unit, wherein in the voltage application pixel , the electrode for extracting charge generated in the photoelectric conversion unit is directly connected to ground, without the intervention of a pixel transistor , such that the solid-state image pickup device is configured such that a voltage of the electrode for extracting charge generated in the photoelectric conversion unit is fixed to ground voltage and the fixed voltage (Va) is applied to the voltage application pixel , characterized in that : the solid-state image pickup device is configured such that the fixed voltage (Va) applied to the voltage application pixel is higher than a voltage applied between the upper electrode of the photoelectric conversion unit and the electrode for extracting charge generated in the photoelectric conversion unit of an ordinary pixel of the pixel array region . a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor of the chalcopyrite structure, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns, wherein the pixel array region has a voltage application pixel on an outermost circumference of the pixel array region or on an outer side with respect to an effective pixel region , in which ordinary pixels that output a pixel signal according to a received light amount are disposed, of the pixel array region , wherein the voltage application pixel is one of the pixels configured such that a fixed voltage (Va) is applied between an upper electrode of the photoelectric conversion unit and an electrode for extracting charge generated in the photoelectric conversion unit, wherein in the voltage application pixel , the electrode for extracting charge generated in the photoelectric conversion unit is directly connected to ground, without the intervention of a pixel transistor , such that the solid-state image pickup device is configured such that a voltage of the electrode for extracting charge generated in the photoelectric conversion unit is fixed to ground voltage and the fixed voltage (Va) is applied to the voltage application pixel , characterized in that : the solid-state image pickup device is configured such that the fixed voltage (Va) applied to the voltage application pixel is higher than a voltage applied between the upper electrode of the photoelectric conversion unit and the electrode for extracting charge generated in the photoelectric conversion unit of an ordinary pixel of the pixel array region . <EOS>