A non-volatile storage device, comprising: a block of non-volatile storage elements connected to a set of word lines; and managing circuitry in communication with the block of non-volatile storage elements, wherein the managing circuitry is configured to: receive a request to program non-volatile storage elements connected to a second subset of the word lines of the block after reading non-volatile storage elements connected to one or more word lines of a first subset of the word lines of the block, wherein the non-volatile storage elements connected to the second subset of word lines have not been programmed since a last erase operation of said block of non-volatile storage elements; in response to the received request to program the non-volatile storage elements connected to the second subset of word lines, verify the non-volatile storage elements connected to the second subset of word lines for an erased state prior to programming the non-volatile storage elements connected to the second subset; and erase the non-volatile storage elements connected to the second subset of word lines while inhibiting the non-volatile storage elements connected to the first subset of word lines from being erased in response to verifying that the non-volatile storage elements connected to the second subset of word lines are not in the erased state. a block of non-volatile storage elements connected to a set of word lines; and managing circuitry in communication with the block of non-volatile storage elements, wherein the managing circuitry is configured to: receive a request to program non-volatile storage elements connected to a second subset of the word lines of the block after reading non-volatile storage elements connected to one or more word lines of a first subset of the word lines of the block, wherein the non-volatile storage elements connected to the second subset of word lines have not been programmed since a last erase operation of said block of non-volatile storage elements; in response to the received request to program the non-volatile storage elements connected to the second subset of word lines, verify the non-volatile storage elements connected to the second subset of word lines for an erased state prior to programming the non-volatile storage elements connected to the second subset; and erase the non-volatile storage elements connected to the second subset of word lines while inhibiting the non-volatile storage elements connected to the first subset of word lines from being erased in response to verifying that the non-volatile storage elements connected to the second subset of word lines are not in the erased state. receive a request to program non-volatile storage elements connected to a second subset of the word lines of the block after reading non-volatile storage elements connected to one or more word lines of a first subset of the word lines of the block, wherein the non-volatile storage elements connected to the second subset of word lines have not been programmed since a last erase operation of said block of non-volatile storage elements; in response to the received request to program the non-volatile storage elements connected to the second subset of word lines, verify the non-volatile storage elements connected to the second subset of word lines for an erased state prior to programming the non-volatile storage elements connected to the second subset; and erase the non-volatile storage elements connected to the second subset of word lines while inhibiting the non-volatile storage elements connected to the first subset of word lines from being erased in response to verifying that the non-volatile storage elements connected to the second subset of word lines are not in the erased state. <EOS>