mhurhangee/patent-ind-claim-en huggingface dataset:
A process for manufacturing a timepiece component, in particular a multi-level timepiece component, comprising a step of manufacturing at least one metal layer of the timepiece component having an upper surface , characterized in that it comprises the following steps: - E3: forming at least one cavity in the upper surface of the metal layer of the timepiece component, the cavity comprising the production of at least one side wall not perpendicular to the upper surface of the metal layer , so that said cavity comprises a flat cross section greater, at at least one depth below the level of the upper surface , than the cross section of its opening level with the upper surface ; - E5: forming another metal layer at least partially superposed on said upper surface comprising a cavity , by a galvanic deposition of a metal or of an alloy, filling said at least one cavity . - E3: forming at least one cavity in the upper surface of the metal layer of the timepiece component, the cavity comprising the production of at least one side wall not perpendicular to the upper surface of the metal layer , so that said cavity comprises a flat cross section greater, at at least one depth below the level of the upper surface , than the cross section of its opening level with the upper surface ; - E5: forming another metal layer at least partially superposed on said upper surface comprising a cavity , by a galvanic deposition of a metal or of an alloy, filling said at least one cavity .
A method of recovering stored energy, the method comprising: pressurizing liquid air or liquid air components to a pressure greater than or equal to about 80 atmospheres (81,06 bar); regasifying the pressurized liquid air or liquid air components to produce pressurized gaseous air or gaseous air components at a pressure greater than or equal to about 80 atmospheres (81,06 bar) using heat produced by combusting an exhaust gas stream from a high pressure turbine with a gaseous fuel; expanding the pressurized gaseous air or gaseous air components through the high pressure turbine to form the exhaust gas stream; and producing electricity with a generator driven by the high pressure turbine; characterized by comprising at start-up of the method regasifying the pressurized liquid air or liquid air components to produce pressurized gaseous air or gaseous air components at a pressure greater than or equal to about 5 atmospheres (5,07 bar) using heat produced by combusting ambient air with the fuel. pressurizing liquid air or liquid air components to a pressure greater than or equal to about 80 atmospheres (81,06 bar); regasifying the pressurized liquid air or liquid air components to produce pressurized gaseous air or gaseous air components at a pressure greater than or equal to about 80 atmospheres (81,06 bar) using heat produced by combusting an exhaust gas stream from a high pressure turbine with a gaseous fuel; expanding the pressurized gaseous air or gaseous air components through the high pressure turbine to form the exhaust gas stream; and producing electricity with a generator driven by the high pressure turbine; characterized by comprising at start-up of the method regasifying the pressurized liquid air or liquid air components to produce pressurized gaseous air or gaseous air components at a pressure greater than or equal to about 5 atmospheres (5,07 bar) using heat produced by combusting ambient air with the fuel.
A dental cleaning system comprising a holder for dental floss , which includes two mutually spaced brackets and a dental floss held between the two brackets , and comprising an annular, base body to be slid onto a finger, which includes a recess situated in the longitudinal direction of the base body for accommodating a fingertip, wherein the brackets extend essentially transversely with respect to the longitudinal direction of the base body , wherein the longitudinal direction of the base body extends through the center of the recess from a first recess opening to a second recess opening through which the finger can be guided into the recess , wherein the recess is conical such that the dental cleaning system can be held on the finger in a rotationally fixed manner, wherein a first grip surface is situated on each of the two opposite sides of the base body , which is provided for controlling the movement of the dental floss in the mouth with the aid of the fingers adjacent to the base body and wherein the two first grip surfaces each form a wing-like surface, which projects beyond the base body . and comprising an annular, base body to be slid onto a finger, which includes a recess situated in the longitudinal direction of the base body for accommodating a fingertip, wherein the brackets extend essentially transversely with respect to the longitudinal direction of the base body , wherein the longitudinal direction of the base body extends through the center of the recess from a first recess opening to a second recess opening through which the finger can be guided into the recess , wherein the recess is conical such that the dental cleaning system can be held on the finger in a rotationally fixed manner, wherein a first grip surface is situated on each of the two opposite sides of the base body , which is provided for controlling the movement of the dental floss in the mouth with the aid of the fingers adjacent to the base body and wherein the two first grip surfaces each form a wing-like surface, which projects beyond the base body .
A briquetting roll , integrally having an inner layer material (4; 14) and an outer layer material (5; 15), which comprise mutually different materials and are in contact with each other at a respective exterior and interior thereof, and having pockets (6; 16) formed at an outer circumference of the outer layer material (5; 15), wherein the inner layer material (4; 14) is a steel material, and the outer layer material is a high-carbon high-speed steel material, characterized in that the inner layer material (4; 14) is an SCM 440 forged steel material, and the high-carbon high-speed steel material, which is the outer layer material (5; 15), comprises, as mass ratios, C: 1.5 to 2.5%, Si: 0.2 to 1.0%, Mn: 0.2 to 1.2%, Ni: 0 to 1.6%, Cr: 2.5 to 11%, Mo: 0.2 to 8.0%, V: 0.2 to 8.5%, W: 0 to 5.0%, Co: 0 to 5.0%, and a balance of Fe and inevitable impurities, having a secondary dendrite size of 20 to 150 μm, a total carbide area ratio of 15 to 30%, and a surface hardness of HS 87 to 93.
A method of laser ablation surface preparation of a three-dimensional surface, the method comprising: receiving a 3D virtual model of a surface to be ablated; generating a series of waypoints to form a preliminary ablation path through which a laser sheet would move across the surface , wherein each of the waypoints is associated with a waypoint location on the surface and includes a laser head position , a laser sheet orientation , and a scan width , wherein the scan width is the width of the laser sheet incident on the surface ; optimizing the coverage by the laser sheet of the surface of the preliminary ablation path by adjusting one or more of the laser head position , the laser sheet orientation , the scan width , the waypoint location, and the scan spacing of one or more waypoints to produce an adapted ablation path ; and ablating the surface by moving the laser sheet according to the adapted ablation path . receiving a 3D virtual model of a surface to be ablated; generating a series of waypoints to form a preliminary ablation path through which a laser sheet would move across the surface , wherein each of the waypoints is associated with a waypoint location on the surface and includes a laser head position , a laser sheet orientation , and a scan width , wherein the scan width is the width of the laser sheet incident on the surface ; optimizing the coverage by the laser sheet of the surface of the preliminary ablation path by adjusting one or more of the laser head position , the laser sheet orientation , the scan width , the waypoint location, and the scan spacing of one or more waypoints to produce an adapted ablation path ; and ablating the surface by moving the laser sheet according to the adapted ablation path .
An aqueous adhesive for a tennis ball, the aqueous adhesive comprising rubber latex and a sulfenamide-based vulcanization accelerator, wherein the rubber latex is natural rubber latex and/or synthetic rubber latex, the synthetic rubber in the synthetic rubber latex being styrene-butadiene rubber, acrylonitrile-butadiene rubber, chloroprene rubber, butadiene rubber, isoprene rubber, isobutylene-isoprene rubber, ethylene-propylene rubber, or modified products thereof, and wherein the aqueous adhesive further comprises an inorganic filler in an amount of not less than 10% by weight in terms of a solid content. the rubber latex is natural rubber latex and/or synthetic rubber latex, the synthetic rubber in the synthetic rubber latex being styrene-butadiene rubber, acrylonitrile-butadiene rubber, chloroprene rubber, butadiene rubber, isoprene rubber, isobutylene-isoprene rubber, ethylene-propylene rubber, or modified products thereof, and wherein the aqueous adhesive further comprises an inorganic filler in an amount of not less than 10% by weight in terms of a solid content.
A system comprising: an apparatus configured to cause a phase-shift in reflected signals (R, R') that are a reflection of surface-traveling wave signals (S) of a select signal frequency, comprising: a conductive strip , having a plurality of slots therein alternatingly arranged orthogonal to each other, each slot having a length (L) that is a fraction of between 9/16 and 7/8 of the wavelength λ 0 associated with the select signal frequency; a plurality of conductive enclosures respectively disposed under each of the plurality of slots , each conductive enclosure having a width and length sufficient to enclose a respective corresponding slot , wherein the conductive enclosures have a material therein and have a depth that is a fraction of between 1/8 and 3/8 of the wavelength λ d associated with the select signal frequency when transmitted in the material ; wherein the plurality of slots and plurality of conductive enclosures cause a phase-shift in the range of 150 to 210 degrees in reflected signals (R') that are a reflection of surface-traveling wave signals (S) at the select signal frequency which impinge the apparatus ; wherein the system further comprises: a surface structure of a vehicle comprising a surface irregularity , wherein the apparatus is disposed on the surface structure proximate to the surface irregularity . a conductive strip , having a plurality of slots therein alternatingly arranged orthogonal to each other, each slot having a length (L) that is a fraction of between 9/16 and 7/8 of the wavelength λ 0 associated with the select signal frequency; a plurality of conductive enclosures respectively disposed under each of the plurality of slots , each conductive enclosure having a width and length sufficient to enclose a respective corresponding slot , wherein the conductive enclosures have a material therein and have a depth that is a fraction of between 1/8 and 3/8 of the wavelength λ d associated with the select signal frequency when transmitted in the material ; wherein the plurality of slots and plurality of conductive enclosures cause a phase-shift in the range of 150 to 210 degrees in reflected signals (R') that are a reflection of surface-traveling wave signals (S) at the select signal frequency which impinge the apparatus ; wherein the system further comprises: a surface structure of a vehicle comprising a surface irregularity , wherein the apparatus is disposed on the surface structure proximate to the surface irregularity .
A metal-resin joining device for joining a thermoplastic resin material to a metal material by melting at least a portion of the thermoplastic resin material in contact with the metal material through heating the metal material , the device comprising: a center electrode that is brought in contact with the metal material ; and one or at least three peripheral electrodes (24b; 24b1, 24b2, 24b3; 24b11, ..., b1n; 24e; 24f) that is or are brought in contact with the metal material so as to annularly surround the center electrode and to which a current (i1) flows from the center electrode via the metal material , characterized in that the one or at least three peripheral electrodes (24b; 24b1, 24b2, 24b3; 24b11, ..., b1n; 24e; 24f) is or are made of a metal material having a higher electrical resistance and/or a lower thermal conductivity than the center electrode . a center electrode that is brought in contact with the metal material ; and one or at least three peripheral electrodes (24b; 24b1, 24b2, 24b3; 24b11, ..., b1n; 24e; 24f) that is or are brought in contact with the metal material so as to annularly surround the center electrode and to which a current (i1) flows from the center electrode via the metal material , characterized in that the one or at least three peripheral electrodes (24b; 24b1, 24b2, 24b3; 24b11, ..., b1n; 24e; 24f) is or are made of a metal material having a higher electrical resistance and/or a lower thermal conductivity than the center electrode .
A hydrochloride of a compound of formula (I), having the structure shown in formula (I'), wherein, n is 1.6 - 2.4, and the carbon atoms with "*" are chiral carbon atoms, which exist in a ( R ) or ( S ) single enantiomer form or a ( R ) or ( S ) single enantiomer-rich form.
Method for operating a medical imaging system having at least two independently executable application programs , which method comprises the method steps: a) a computing device of the imaging system detecting at least one display device by its properties relevant to visual display; b) the computing device retrieving at least one respective application-specific requirement of the at least two independently executable application programs on a display device for visual display of respective application program information on a display device , wherein the retrieved requirement comprises one or more of the following parameters of the respective display device : a required or recommended image resolution; a required or recommended frame rate; a required or recommended colour space; calibration information; a recommended or required size of a display surface , a recommended or required orientation; arrangement information; type information, which indicates whether a conventional screen or a touchscreen or a 3D screen or a projector or a pair of smartglasses is recommended or required in each case; c) comparing the properties detected in each case for the at least one display device and the retrieved requirement; d) according to a result of the comparison, the computing device either assigning the independently executable application programs respectively to the at least one display device or activating an assignment facility for a user . a) a computing device of the imaging system detecting at least one display device by its properties relevant to visual display; b) the computing device retrieving at least one respective application-specific requirement of the at least two independently executable application programs on a display device for visual display of respective application program information on a display device , wherein the retrieved requirement comprises one or more of the following parameters of the respective display device : a required or recommended image resolution; a required or recommended frame rate; a required or recommended colour space; calibration information; a recommended or required size of a display surface , a recommended or required orientation; arrangement information; type information, which indicates whether a conventional screen or a touchscreen or a 3D screen or a projector or a pair of smartglasses is recommended or required in each case; c) comparing the properties detected in each case for the at least one display device and the retrieved requirement; d) according to a result of the comparison, the computing device either assigning the independently executable application programs respectively to the at least one display device or activating an assignment facility for a user .
A server device connected to a communication terminal in a bidirectionally communicable manner and configured to receive a departure point, a destination, and a route retrieval request from the departure point to the destination from the communication terminal and to deliver a route retrieved in response to the received route retrieval request to the communication terminal , the server device comprising: route information acquiring means for acquiring, when the route retrieval request is acquired from the communication terminal , route information related to a target route that is a route corresponding to a predetermined distance from the departure point in a terminal-recommended route that is a route from the departure point to the destination and is retrieved by using terminal-side map information provided in the communication terminal ; route retrieving means for retrieving a route to the destination that includes at least a part of the target route by using device-side map information provided in the server device and the route information; and route delivering means for delivering the route retrieved by the route retrieving means to the communication terminal . route information acquiring means for acquiring, when the route retrieval request is acquired from the communication terminal , route information related to a target route that is a route corresponding to a predetermined distance from the departure point in a terminal-recommended route that is a route from the departure point to the destination and is retrieved by using terminal-side map information provided in the communication terminal ; route retrieving means for retrieving a route to the destination that includes at least a part of the target route by using device-side map information provided in the server device and the route information; and route delivering means for delivering the route retrieved by the route retrieving means to the communication terminal .
A semiconductor substrate comprising: a substrate ; a seed layer disposed on the substrate ; a buffer layer disposed on the seed layer ; and a plurality of first nitride semiconductor layers disposed on the buffer layer , wherein at least one stress control layer is included between the plurality of first nitride semiconductor layers , the buffer layer comprises a plurality of step regions and at least one heterogeneous region disposed between two step regions that are adjacent to the first nitride semiconductor layer , the step regions comprise Al x Ga (1-x) N, and x in the each step region is different from each other, the heterogeneous region comprises a nitride semiconductor material different from the step regions , an amount of Al in the heterogeneous region is 0, and the heterogeneous region is one of InN, InGaN and GaN, the plurality of step regions comprises a first step region in contact with the seed layer , a second step region adjacent to the first step region , and other step regions excluding the first and second step regions , the seed layer and the plurality of step regions comprise Al, and a difference in amounts of Al between the seed layer and the first step region is in a range of 30% to 60%, characterised in that the an amount of Al in the heterogeneous region is 0, and the heterogeneous region is one of InN, InGaN and GaN, and amount of Al in the second step region is smaller than the amount of Al in the first step region by 20% to 40%. a substrate ; a seed layer disposed on the substrate ; a buffer layer disposed on the seed layer ; and a plurality of first nitride semiconductor layers disposed on the buffer layer , wherein at least one stress control layer is included between the plurality of first nitride semiconductor layers , the buffer layer comprises a plurality of step regions and at least one heterogeneous region disposed between two step regions that are adjacent to the first nitride semiconductor layer , the step regions comprise Al x Ga (1-x) N, and x in the each step region is different from each other, the heterogeneous region comprises a nitride semiconductor material different from the step regions , an amount of Al in the heterogeneous region is 0, and the heterogeneous region is one of InN, InGaN and GaN, the plurality of step regions comprises a first step region in contact with the seed layer , a second step region adjacent to the first step region , and other step regions excluding the first and second step regions , the seed layer and the plurality of step regions comprise Al, and a difference in amounts of Al between the seed layer and the first step region is in a range of 30% to 60%, characterised in that the an amount of Al in the heterogeneous region is 0, and the heterogeneous region is one of InN, InGaN and GaN, and amount of Al in the second step region is smaller than the amount of Al in the first step region by 20% to 40%.
An interferometer grating support of an imaging system configured for grating-based x-ray imaging, comprising: at least two elongate supports separated from each other by a non-zero distance, wherein the at least two elongate supports have a first end and a second end ; a first arc shaped grating affixed to the first end of the at least two elongate supports; a second arc shaped grating affixed to the second end of the at least two elongate supports, and wherein the first arc shaped grating includes a source grating of an interferometer and the second arc shaped grating includes a phase grating of the interferometer. at least two elongate supports separated from each other by a non-zero distance, wherein the at least two elongate supports have a first end and a second end ; a first arc shaped grating affixed to the first end of the at least two elongate supports; a second arc shaped grating affixed to the second end of the at least two elongate supports, and wherein the first arc shaped grating includes a source grating of an interferometer and the second arc shaped grating includes a phase grating of the interferometer.