mhurhangee/patent-ind-claim-en huggingface dataset:
Timepiece regulating mechanism , comprising a plate and, arranged on said plate , a resonator mechanism with a quality factor Q, and an escapement mechanism which is arranged so as to be subjected to a torque of drive means comprised in a movement , said resonator mechanism comprising an inertia element arranged to oscillate with respect to said plate , said inertia element being subjected to the action of elastic return means directly or indirectly attached to said plate , and said inertia element being arranged to cooperate indirectly with an escape wheel set comprised in said escapement mechanism , characterized in that said resonator mechanism is a resonator with a virtual pivot rotating about a main axis (DP), with a flexure bearing including at least two flexible strips , and including an impulse pin integral with said inertia element , in that said escapement mechanism includes pallets pivoting about a secondary axis (DS) and including a lever fork arranged to cooperate with said impulse pin , and is a detached escapement mechanism, wherein, during the operating cycle, said resonator mechanism has at least one phase of freedom in which said impulse pin is at a distance from said lever fork , characterized in that said flexure bearing includes two flexible strips which are crossed in projection onto a plane perpendicular to said main axis (DP), at said virtual pivot defining said main axis (DP), and located in two parallel and distinct levels, and in that the lift angle (β) of the resonator, during which said impulse pin is in contact with said lever fork , is less than 10°.
A method of manufacturing an LED lighting device comprising a lead frame , comprising the steps of A) preparing a stamping arrangement to stamp a lead frame comprising - a plurality of electrode contact regions , wherein complementary contact regions comprise an anode contact region and a cathode contact region separated by an initial gap width (Gs); and - a number of connecting bars , wherein a connecting bar extends between regions of the lead frame ; B) using the stamping arrangement to stamp the lead frame ; and C) deforming at least one connecting bar of the stamped lead frame to reduce the gap width between complementary contact regions to a final gap width (G D ), and D) mounting at least one semiconductor device onto the complementary electrode contact regions of the lead frame , and wherein, the at least one semiconductor device is a light emitting diode (LED) die package , and the step of deforming a connecting bar comprises bending a portion of a connecting bar out of the plane (P) of the lead frame to shorten the length of the connecting bar . A) preparing a stamping arrangement to stamp a lead frame comprising - a plurality of electrode contact regions , wherein complementary contact regions comprise an anode contact region and a cathode contact region separated by an initial gap width (Gs); and - a number of connecting bars , wherein a connecting bar extends between regions of the lead frame ; - a plurality of electrode contact regions , wherein complementary contact regions comprise an anode contact region and a cathode contact region separated by an initial gap width (Gs); and - a number of connecting bars , wherein a connecting bar extends between regions of the lead frame ; B) using the stamping arrangement to stamp the lead frame ; and C) deforming at least one connecting bar of the stamped lead frame to reduce the gap width between complementary contact regions to a final gap width (G D ), and D) mounting at least one semiconductor device onto the complementary electrode contact regions of the lead frame ,
A method for reducing loads of a wind turbine , the method comprising: determining an angular pitch speed parameter of the rotor blade of the wind turbine , determining the angular pitch speed parameter comprising: monitoring sensor signals generated by at least one sensor associated with the rotor blade, wherein the at least one sensor includes an encoder and wherein the sensor signals are pulses; counting the monitored pulses generated by the encoder, and determining the angular pitch speed parameter of the rotor blade as a function of the counted pulses; determining an operational state of the wind turbine ; comparing the angular pitch speed parameter to a predetermined parameter threshold during turbine shutdown; and if the operational state corresponds to a predetermined operational state, yawing a nacelle of the wind turbine away from an incoming wind direction for as long as the angular pitch speed parameter is below the predetermined parameter threshold, wherein the predetermined operational state of the wind turbine comprises at least one of an idling state, a parked state, or a maintenance state. determining an angular pitch speed parameter of the rotor blade of the wind turbine , determining the angular pitch speed parameter comprising: monitoring sensor signals generated by at least one sensor associated with the rotor blade, wherein the at least one sensor includes an encoder and wherein the sensor signals are pulses; counting the monitored pulses generated by the encoder, and determining the angular pitch speed parameter of the rotor blade as a function of the counted pulses; monitoring sensor signals generated by at least one sensor associated with the rotor blade, wherein the at least one sensor includes an encoder and wherein the sensor signals are pulses; counting the monitored pulses generated by the encoder, and determining the angular pitch speed parameter of the rotor blade as a function of the counted pulses; determining an operational state of the wind turbine ; comparing the angular pitch speed parameter to a predetermined parameter threshold during turbine shutdown; and if the operational state corresponds to a predetermined operational state, yawing a nacelle of the wind turbine away from an incoming wind direction for as long as the angular pitch speed parameter is below the predetermined parameter threshold, wherein the predetermined operational state of the wind turbine comprises at least one of an idling state, a parked state, or a maintenance state.
A method comprising a display of an authentication code, implemented by an electronic device, and a management of this electronic device, implemented by a server, the method comprising, by the electronic device: - obtaining (A1) said authentication code, - detecting (A2) a predefined state of the electronic device, - selecting (A3) among several display modes, a display mode for the authentication code associated with the detected predefined state, and - displaying (A4) the authentication code according to the selected display mode by means of a display module of the electronic device, the method further comprising, by the server: - requesting (C7) for information relating to the display mode for the authentication code displayed on the electronic device, - receiving (C8) the information relating to a display mode for an authentication code of the electronic device, - determining (C9) the predefined state of the electronic device from said information relating to the received display mode, characterized in that the authentication code comprises a string of characters and each display mode is defined by at least one parameter chosen from the list of parameters comprising: underlined, strikethrough, oriented according to a chosen orientation, colored with a chosen color, on a chosen background color, with a chosen font, in italics, in bold. - obtaining (A1) said authentication code, - detecting (A2) a predefined state of the electronic device, - selecting (A3) among several display modes, a display mode for the authentication code associated with the detected predefined state, and - displaying (A4) the authentication code according to the selected display mode by means of a display module of the electronic device, - requesting (C7) for information relating to the display mode for the authentication code displayed on the electronic device, - receiving (C8) the information relating to a display mode for an authentication code of the electronic device, - determining (C9) the predefined state of the electronic device from said information relating to the received display mode,
A device , comprising: a first portion and a second portion ; a hinge assembly between the first portion and the second portion , the hinge assembly being slideably secured to the first portion and the second portion, the hinge assembly defining a pathway and a bridge cam ; a flexible display secured to the first portion and the second portion; a bridge structure positioned relative to the hinge assembly and the flexible display; a cord that extends along the pathway between the hinge assembly and the first portion and that is configured to control a gap between the first portion and the hinge assembly depending upon an orientation of the first and second portions; and, the bridge cam is configured to control a position of the bridge structure depending upon the orientation of the first and second portions and the bridge cam controls the bridge structure independently of the cord controlling the gap. a first portion and a second portion ; a hinge assembly between the first portion and the second portion , the hinge assembly being slideably secured to the first portion and the second portion, the hinge assembly defining a pathway and a bridge cam ; a flexible display secured to the first portion and the second portion; a bridge structure positioned relative to the hinge assembly and the flexible display; a cord that extends along the pathway between the hinge assembly and the first portion and that is configured to control a gap between the first portion and the hinge assembly depending upon an orientation of the first and second portions; and, the bridge cam is configured to control a position of the bridge structure depending upon the orientation of the first and second portions and the bridge cam controls the bridge structure independently of the cord controlling the gap.
A spunbond nonwoven fabric formed of an olefin-based resin composition (I) comprising an olefin-based polymer (i) satisfying the following requirements: (a) the melt flow rate (MFR) of the olefin-based polymer (i), as measured under the condition of a temperature of 230°C and a load of 21.18 N, is 1,000 g/10 min or more; and (b) the melting endothermic amount ΔH - D, as measured from the melting endothermic curve drawn by keeping the olefin-based polymer (i) at -10°C in a nitrogen atmosphere for 5 minutes and then heating it at 10°C/min in a nitrogen atmosphere using a differential scanning calorimeter (DSC), is less than 80 J/g, the melt flow rate (MFR)of the olefin-based resin composition (I), as measured under the condition of a temperature of 230°C and a load of 21.18 N, is 40 g/10 min or more, the olefin-based resin composition (I) further satisfies the following requirement : the melting endothermic amount ΔH - D, as measured from the melting endothermic curve drawn by keeping the olefin-based resin composition (I) at -10°C in a nitrogen atmosphere for 5 minutes and then heating it at 10°C/min in a nitrogen atmosphere using a differential scanning calorimeter (DSC), is less than 90 J/g, the content of the olefin-based polymer (i) in the olefin-based resin composition (I) is 1 to 50% by mass relative to the total amount, 100% by mass of the olefin-based resin composition (I), the olefin-based polymer (i) is a propylene-based polymer (ip) and satisfies the following requirements (c) and (d): (c) the mesopentad fraction [mmmm] thereof is 20 to 60 mol%; and (d) [rrrr]/(1-[mmmm]) ≤ 0.1, and the olefin-based resin composition (I) is a propylene-based resin composition. (a) the melt flow rate (MFR) of the olefin-based polymer (i), as measured under the condition of a temperature of 230°C and a load of 21.18 N, is 1,000 g/10 min or more; and (b) the melting endothermic amount ΔH - D, as measured from the melting endothermic curve drawn by keeping the olefin-based polymer (i) at -10°C in a nitrogen atmosphere for 5 minutes and then heating it at 10°C/min in a nitrogen atmosphere using a differential scanning calorimeter (DSC), is less than 80 J/g, the melt flow rate (MFR)of the olefin-based resin composition (I), as measured under the condition of a temperature of 230°C and a load of 21.18 N, is 40 g/10 min or more, the olefin-based resin composition (I) further satisfies the following requirement : the melting endothermic amount ΔH - D, as measured from the melting endothermic curve drawn by keeping the olefin-based resin composition (I) at -10°C in a nitrogen atmosphere for 5 minutes and then heating it at 10°C/min in a nitrogen atmosphere using a differential scanning calorimeter (DSC), is less than 90 J/g, the melt flow rate (MFR)of the olefin-based resin composition (I), as measured under the condition of a temperature of 230°C and a load of 21.18 N, is 40 g/10 min or more, (c) the mesopentad fraction [mmmm] thereof is 20 to 60 mol%; and (d) [rrrr]/(1-[mmmm]) ≤ 0.1, and
An absorbent article comprising a topsheet, backsheet and absorbent core disposed between the topsheet and backsheet and a composite; the composite comprising a first substrate and a second substrate joined in a bonding region, wherein: the first substrate comprises a first Average Peak Force Tensile Strength and the second substrate has a second Average Peak Force Tensile Strength, wherein the first Average Peak Force Tensile Strength is greater than or equal to the second Average Peak Force Tensile Strength; and the bonding region comprises: a plurality of discrete bonds; a Bond Density of from 10% to 22%; wherein a majority of the discrete bonds comprise a major dimension of less than 3.5 mm and wherein the plurality of discrete bonds comprises one or more bond having a major dimension of 3.5 mm or greater and the bonding region comprises a Ratio of Larger to Smaller Bonds of 2 or less; and an Average Composite Tensile Strength that is within 15% of the second Average Peak Force Tensile Strength, all parameters of the claim being as defined and measured in the description. the first substrate comprises a first Average Peak Force Tensile Strength and the second substrate has a second Average Peak Force Tensile Strength, wherein the first Average Peak Force Tensile Strength is greater than or equal to the second Average Peak Force Tensile Strength; and the bonding region comprises: a plurality of discrete bonds; a Bond Density of from 10% to 22%; wherein a majority of the discrete bonds comprise a major dimension of less than 3.5 mm and wherein the plurality of discrete bonds comprises one or more bond having a major dimension of 3.5 mm or greater and the bonding region comprises a Ratio of Larger to Smaller Bonds of 2 or less; and an Average Composite Tensile Strength that is within 15% of the second Average Peak Force Tensile Strength, all parameters of the claim being as defined and measured in the description. a plurality of discrete bonds; a Bond Density of from 10% to 22%; wherein a majority of the discrete bonds comprise a major dimension of less than 3.5 mm and wherein the plurality of discrete bonds comprises one or more bond having a major dimension of 3.5 mm or greater and the bonding region comprises a Ratio of Larger to Smaller Bonds of 2 or less; and an Average Composite Tensile Strength that is within 15% of the second Average Peak Force Tensile Strength, all parameters of the claim being as defined and measured in the description.
An apparatus for delivering a shunt to an atrial septum of a patient, the apparatus comprising: a sheath comprising a distal region, a proximal region, and a sheath lumen extending therethrough, the sheath lumen being configured to receive the shunt in a contracted delivery state, the distal region of the sheath being configured for percutaneous advancement to the atrial septum; a first catheter moveably disposed within the sheath lumen, the first catheter comprising a first catheter lumen extending therethrough; a hub moveably disposed within the sheath lumen distal to the first catheter , the hub comprising a hub lumen extending therethrough and one or more engagers configured to releasably engage the shunt in the contracted delivery state within the sheath lumen; a second catheter moveably disposed within the first catheter lumen and the hub lumen, wherein the first catheter and the hub are movable while the second catheter remains in place; and a handle disposed at the proximal region of the sheath , wherein the first catheter , the hub , and the second catheter are independently movable relative to the sheath responsive to actuation at the handle to facilitate transition of the shunt from the contracted delivery state to an expanded deployed state at the atrial septum, wherein the handle further comprises a knob that when actuated is configured to facilitate deployment of and/or halfway retrieval of the shunt at the atrial septum by adjusting a length of the delivery apparatus relative to the sheath . a sheath comprising a distal region, a proximal region, and a sheath lumen extending therethrough, the sheath lumen being configured to receive the shunt in a contracted delivery state, the distal region of the sheath being configured for percutaneous advancement to the atrial septum; a first catheter moveably disposed within the sheath lumen, the first catheter comprising a first catheter lumen extending therethrough; a hub moveably disposed within the sheath lumen distal to the first catheter , the hub comprising a hub lumen extending therethrough and one or more engagers configured to releasably engage the shunt in the contracted delivery state within the sheath lumen; a second catheter moveably disposed within the first catheter lumen and the hub lumen, wherein the first catheter and the hub are movable while the second catheter remains in place; and a handle disposed at the proximal region of the sheath , wherein the first catheter , the hub , and the second catheter are independently movable relative to the sheath responsive to actuation at the handle to facilitate transition of the shunt from the contracted delivery state to an expanded deployed state at the atrial septum, wherein the handle further comprises a knob that when actuated is configured to facilitate deployment of and/or halfway retrieval of the shunt at the atrial septum by adjusting a length of the delivery apparatus relative to the sheath .
Process for producing a diesel fuel for combustion engines, comprising the steps of: I) reacting carbon monoxide and hydrogen in the presence of a first catalyst to form a first product mixture containing hydrocarbons and olefins, which has a fraction of olefins having 5 to 10 carbon atoms of ≥ 10 weight% to ≤ 45 weight%; II) reacting at least one portion of the first product mixture, containing olefins having 5 to 10 carbon atoms, with hydrogen and also carbon monoxide and/or carbon dioxide in the presence of a second catalyst, which is different from the first catalyst, to form a diesel fuel for combustion engines, containing alkanols having 6 to 11 carbon atoms. I) reacting carbon monoxide and hydrogen in the presence of a first catalyst to form a first product mixture containing hydrocarbons and olefins, which has a fraction of olefins having 5 to 10 carbon atoms of ≥ 10 weight% to ≤ 45 weight%; II) reacting at least one portion of the first product mixture, containing olefins having 5 to 10 carbon atoms, with hydrogen and also carbon monoxide and/or carbon dioxide in the presence of a second catalyst, which is different from the first catalyst, to form a diesel fuel for combustion engines, containing alkanols having 6 to 11 carbon atoms.
A semiconductor device comprising: - a semiconductor chip configured for voltages of at least 0.6 kV comprising top contact areas at a chip top side , - a first electric wiring layer in electric contact with the top contact areas having first contact areas electrically assigned to the top contact areas , - a second electric wiring layer on a side of the first electric wiring layer remote from the top contact areas and having second contact areas electrically assigned to the top contact areas , the second contact areas are configured as external contact areas, and - at least one third electric wiring layer located between and electrically connected with the first electric wiring layer and the second electric wiring layer and having third contact areas , wherein - the semiconductor device is a chip-sized package, - the semiconductor chip is a power metal-insulator field-effect transistor, MISFET, or a power insulated-gate bipolar transistor, IGBT, - the first, second and third wiring layers are separated from one another in each case by an insulation layer made of a dielectric material through which electric through-contacts are formed, - a first one of the second contact areas shaped differently from an electrically assigned one of the top contact areas completely runs around a second one of the second contact areas shaped differently from the electrically assigned one of the top contact areas in a coaxial manner, seen in top view of the chip top side , so that the first one and the second one of the second contact areas are arranged rotational symmetrically and/or point symmetrically. - a semiconductor chip configured for voltages of at least 0.6 kV comprising top contact areas at a chip top side , - a first electric wiring layer in electric contact with the top contact areas having first contact areas electrically assigned to the top contact areas , - a second electric wiring layer on a side of the first electric wiring layer remote from the top contact areas and having second contact areas electrically assigned to the top contact areas , the second contact areas are configured as external contact areas, and - at least one third electric wiring layer located between and electrically connected with the first electric wiring layer and the second electric wiring layer and having third contact areas , - the semiconductor device is a chip-sized package, - the semiconductor chip is a power metal-insulator field-effect transistor, MISFET, or a power insulated-gate bipolar transistor, IGBT, - the first, second and third wiring layers are separated from one another in each case by an insulation layer made of a dielectric material through which electric through-contacts are formed, - a first one of the second contact areas shaped differently from an electrically assigned one of the top contact areas completely runs around a second one of the second contact areas shaped differently from the electrically assigned one of the top contact areas in a coaxial manner, seen in top view of the chip top side , so that the first one and the second one of the second contact areas are arranged rotational symmetrically and/or point symmetrically.