A photoarray, comprising: - a plurality of cells , wherein - each of said cells comprises a means that is configured to generate a photocurrent (I) being proportional to the intensity (L) of the light impinging on the respective cell , and wherein - each of said cells comprises a change detection circuit connected to the respective means for generating the photocurrent (I), which change detection circuit is configured to generate an output signal merely in case a change event occurs at which said intensity (L) changes by a threshold amount (T, T') since the preceding change event from the respective cell , wherein the photoarray is additionally also configured to determine the brightness (B') at the respective cell by means of said means for generating said photocurrent (I), wherein each cell comprises a brightness readout circuit that is configured so as to allow for reading a signal (V out ) representing the brightness (B) at the respective cell , characterized in that the brightness readout circuit is connected to the drain (D) of a transistor (M fb ), wherein the source (S) of the transistor (M fb ) is connected to said means for generating the photocurrent (I), and wherein each cell of the photoarray is configured to drive the brightness readout circuit directly by means of the photocurrent (I), and wherein the transistor (M fb ) is in turn connected with its gate to a drain (D) of a further transistor (M') and to a drain of yet another transistor (M"), wherein the gate of the further transistor (M') is connected to the source of the transistor (Mfb), wherein the source of the further transistor (M') is connected to the ground and wherein a voltage (Vpr) is applied to the gate of the yet another transistor (M") and is proportional to the logarithm of the sum of all photocurrents though all cells of the photoarray. - a plurality of cells , wherein - each of said cells comprises a means that is configured to generate a photocurrent (I) being proportional to the intensity (L) of the light impinging on the respective cell , and wherein - each of said cells comprises a change detection circuit connected to the respective means for generating the photocurrent (I), which change detection circuit is configured to generate an output signal merely in case a change event occurs at which said intensity (L) changes by a threshold amount (T, T') since the preceding change event from the respective cell , wherein the photoarray is additionally also configured to determine the brightness (B') at the respective cell by means of said means for generating said photocurrent (I), wherein each cell comprises a brightness readout circuit that is configured so as to allow for reading a signal (V out ) representing the brightness (B) at the respective cell , characterized in that the brightness readout circuit is connected to the drain (D) of a transistor (M fb ), wherein the source (S) of the transistor (M fb ) is connected to said means for generating the photocurrent (I), and wherein each cell of the photoarray is configured to drive the brightness readout circuit directly by means of the photocurrent (I), and wherein the transistor (M fb ) is in turn connected with its gate to a drain (D) of a further transistor (M') and to a drain of yet another transistor (M"), wherein the gate of the further transistor (M') is connected to the source of the transistor (Mfb), wherein the source of the further transistor (M') is connected to the ground and wherein a voltage (Vpr) is applied to the gate of the yet another transistor (M") and is proportional to the logarithm of the sum of all photocurrents though all cells of the photoarray. <EOS>