A light emitting device , comprising: a semiconductor light emitting element to emit a first light (L1); a mounting member ; a first wavelength conversion layer provided between the semiconductor light emitting element and the mounting member and being in contact with the mounting member , the first wavelength conversion layer absorbing the first light (L1) and emitting a second light (L2) having a wavelength longer than a wavelength of the first light (L1); a second wavelength conversion layer provided above the semiconductor light emitting element , the second wavelength conversion layer absorbing the first light (L1) and emitting a third light (L3) having a wavelength longer than the wavelength of the first light (L1); a first transparent layer provided between the semiconductor light emitted element and the second wavelength conversion layer , the first transparent layer being transparent to the first light (L1), the second light (L2), and the third light (L3); and a second transparent layer provided between the semiconductor light emitted element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer , the second transparent layer being transparent to the first light (L1) and the second light (L2), the semiconductor light emitting element being placed on the mounting member in an orientation where a p-side electrode and an n-side electrode of the semiconductor light emitting element are faced toward the mounting member , the second light (L2) emitted from the first wavelength conversion layer propagating in the second transparent layer along an interface of the first wavelength conversion layer and second transparent layer , the second light (L2) being extracted through the first transparent layer . a semiconductor light emitting element to emit a first light (L1); a mounting member ; a first wavelength conversion layer provided between the semiconductor light emitting element and the mounting member and being in contact with the mounting member , the first wavelength conversion layer absorbing the first light (L1) and emitting a second light (L2) having a wavelength longer than a wavelength of the first light (L1); a second wavelength conversion layer provided above the semiconductor light emitting element , the second wavelength conversion layer absorbing the first light (L1) and emitting a third light (L3) having a wavelength longer than the wavelength of the first light (L1); a first transparent layer provided between the semiconductor light emitted element and the second wavelength conversion layer , the first transparent layer being transparent to the first light (L1), the second light (L2), and the third light (L3); and a second transparent layer provided between the semiconductor light emitted element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer , the second transparent layer being transparent to the first light (L1) and the second light (L2), the semiconductor light emitting element being placed on the mounting member in an orientation where a p-side electrode and an n-side electrode of the semiconductor light emitting element are faced toward the mounting member , the second light (L2) emitted from the first wavelength conversion layer propagating in the second transparent layer along an interface of the first wavelength conversion layer and second transparent layer , the second light (L2) being extracted through the first transparent layer . <EOS>