An imaging device comprising: unit pixel cells each including a first electrode , a second electrode facing the first electrode , a photoelectric conversion layer between the first electrode and the second electrode , a charge accumulation region electrically connected to the first electrode , and a signal detection circuit electrically connected to the charge accumulation region ; and a voltage supply circuit electrically connected to the second electrode , the voltage supply circuit supplying a first voltage to the second electrode in an exposure period that is a period for accumulating charges generated by photoelectric conversion in the charge accumulation region , the voltage supply circuit supplying a second voltage (Vc) that is different from the first voltage to the second electrode in a non-exposure period, wherein the unit pixel cells each include a reset transistor that is electrically connected to the charge accumulation region and a reset voltage supply circuit supplying a reset voltage (Vr), the reset transistor switching between supply and cutoff of the reset voltage (Vr) in the non-exposure period for initializing the charge accumulation region , and the start and end of the exposure period is common to the unit pixel cells , characterized in that in the non-exposure period, a potential difference (ΔV) between the first electrode and the second electrode when the reset voltage (Vr) is supplied is greater than the potential difference (ΔV) between the first electrode and the second electrode after the reset voltage (Vr) is cut off, wherein the reset transistor is an n-channel field-effect transistor, and the reset voltage (Vr) is greater than the second voltage (Vc), or the reset transistor is a p-channel field-effect transistor, and the reset voltage (Vr) is smaller than the second voltage (Vc). unit pixel cells each including a first electrode , a second electrode facing the first electrode , a photoelectric conversion layer between the first electrode and the second electrode , a charge accumulation region electrically connected to the first electrode , and a signal detection circuit electrically connected to the charge accumulation region ; and a voltage supply circuit electrically connected to the second electrode , the voltage supply circuit supplying a first voltage to the second electrode in an exposure period that is a period for accumulating charges generated by photoelectric conversion in the charge accumulation region , the voltage supply circuit supplying a second voltage (Vc) that is different from the first voltage to the second electrode in a non-exposure period, wherein the unit pixel cells each include a reset transistor that is electrically connected to the charge accumulation region and a reset voltage supply circuit supplying a reset voltage (Vr), the reset transistor switching between supply and cutoff of the reset voltage (Vr) in the non-exposure period for initializing the charge accumulation region , and the start and end of the exposure period is common to the unit pixel cells , characterized in that in the non-exposure period, a potential difference (ΔV) between the first electrode and the second electrode when the reset voltage (Vr) is supplied is greater than the potential difference (ΔV) between the first electrode and the second electrode after the reset voltage (Vr) is cut off, wherein the reset transistor is an n-channel field-effect transistor, and the reset voltage (Vr) is greater than the second voltage (Vc), or the reset transistor is a p-channel field-effect transistor, and the reset voltage (Vr) is smaller than the second voltage (Vc). the reset transistor is an n-channel field-effect transistor, and the reset voltage (Vr) is greater than the second voltage (Vc), or the reset transistor is a p-channel field-effect transistor, and the reset voltage (Vr) is smaller than the second voltage (Vc). <EOS>