A photovoltaic cell, comprising: a substrate having a front surface and a rear surface opposite to each other, wherein the front surface of the substrate has a plurality of metal pattern regions; a plurality of first pyramid structures disposed in each of the plurality of metal pattern regions; a plurality of platform protrusion structures disposed on the rear surface of the substrate , wherein a height of each of the plurality of first pyramid structures is greater than a height of each of the plurality of platform protrusion structures , and a one-dimensional dimension of a bottom portion of each of the plurality of first pyramid structures is less than a one-dimensional dimension of a bottom portion of each of the plurality of the platform protrusion structures ; a respective first tunneling layer and a respective first doped conductive layer stacked on a portion of the front surface of the substrate in each respective metal pattern region of the plurality of metal pattern regions in a direction away from the substrate , wherein the respective first tunneling layer and the respective first doped conductive layer are formed only in the respective metal pattern region, wherein a doping element type of the respective first doped conductive layer is the same as a doping element type of the substrate ; and a second tunneling layer and a second doped conductive layer stacked on the rear surface of the substrate in a direction away from the substrate , wherein a doping element type of the second doped conductive layer is different from the doping element type of the first doped conductive layer . a substrate having a front surface and a rear surface opposite to each other, wherein the front surface of the substrate has a plurality of metal pattern regions; a plurality of first pyramid structures disposed in each of the plurality of metal pattern regions; a plurality of platform protrusion structures disposed on the rear surface of the substrate , wherein a height of each of the plurality of first pyramid structures is greater than a height of each of the plurality of platform protrusion structures , and a one-dimensional dimension of a bottom portion of each of the plurality of first pyramid structures is less than a one-dimensional dimension of a bottom portion of each of the plurality of the platform protrusion structures ; a respective first tunneling layer and a respective first doped conductive layer stacked on a portion of the front surface of the substrate in each respective metal pattern region of the plurality of metal pattern regions in a direction away from the substrate , wherein the respective first tunneling layer and the respective first doped conductive layer are formed only in the respective metal pattern region, wherein a doping element type of the respective first doped conductive layer is the same as a doping element type of the substrate ; and a second tunneling layer and a second doped conductive layer stacked on the rear surface of the substrate in a direction away from the substrate , wherein a doping element type of the second doped conductive layer is different from the doping element type of the first doped conductive layer . <EOS>