A light-emitting diode comprising: a compound semiconductor structure including a first N-type compound semiconductor layer , an active layer , and a P-type compound semiconductor layer ; a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer ; at least one insulation wall disposed on the compound semiconductor structure and the P-type electrode layer ; at least one N-type electrode layer penetrating the at least one insulation wall ; a conductive substrate in which at least one N-type electrode connecting layer respectively corresponding to the N-type electrode layer is separated from a P-type electrode connecting layer corresponding to the P-type electrode layer ; a second N-type compound semiconductor layer overlying the first N-type compound semiconductor layer and the at least one insulation wall and connecting the N-type electrode layer to the first N-type compound semiconductor layer ; and a conductive adhesive layer provided on the conductive substrate so that the N-type electrode connecting layer is respectively electrically connected to the N-type electrode layer and the P-type electrode connecting layer is electrically connected to the P-type electrode layer ; the light-emitting diode characterized in that the conductive substrate and the conductive adhesive layer include a plurality of partition walls , wherein the partition walls are provided as penetrating the conductive substrate and the conductive adhesive layer thereby forming a plurality of holes , wherein each of the plurality of holes is filled with an insulating material to form the partition walls separating the N-type electrode connecting layer from the P-type electrode connecting layer in order to prevent electrical conduction therebetween, and wherein the partition walls contact with the at least one insulation wall . a compound semiconductor structure including a first N-type compound semiconductor layer , an active layer , and a P-type compound semiconductor layer ; a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer ; at least one insulation wall disposed on the compound semiconductor structure and the P-type electrode layer ; at least one N-type electrode layer penetrating the at least one insulation wall ; a conductive substrate in which at least one N-type electrode connecting layer respectively corresponding to the N-type electrode layer is separated from a P-type electrode connecting layer corresponding to the P-type electrode layer ; a second N-type compound semiconductor layer overlying the first N-type compound semiconductor layer and the at least one insulation wall and connecting the N-type electrode layer to the first N-type compound semiconductor layer ; and a conductive adhesive layer provided on the conductive substrate so that the N-type electrode connecting layer is respectively electrically connected to the N-type electrode layer and the P-type electrode connecting layer is electrically connected to the P-type electrode layer ; the light-emitting diode characterized in that the conductive substrate and the conductive adhesive layer include a plurality of partition walls , wherein the partition walls are provided as penetrating the conductive substrate and the conductive adhesive layer thereby forming a plurality of holes , wherein each of the plurality of holes is filled with an insulating material to form the partition walls separating the N-type electrode connecting layer from the P-type electrode connecting layer in order to prevent electrical conduction therebetween, and wherein the partition walls contact with the at least one insulation wall . <EOS>