A solid state imaging device comprising: a plurality of photoelectric conversion sections including photosensitive regions and distributed in a first direction (D1), the photosensitive regions being arranged to generate a charge in response to incident light; and a plurality of transfer sections distributed in a second direction intersecting the first direction (D1) with corresponding photoelectric conversion sections of the plurality of photoelectric conversion sections and arranged to transfer the charge generated in the corresponding photoelectric conversion sections , wherein the photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region , and includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction, the second impurity region is provided from the one end of the photosensitive region or a vicinity of the one end to the other end of the photosensitive region , and has a shape that is line-symmetric with respect to a center line (G1) of the photosensitive region along the second direction (D2) in plan view, a width (W) of the second impurity region in the first direction (D1) increases in a transfer direction (TD) from the one end to the other end, and characterised in that an increase rate of the width (W) of the second impurity region in each of sections obtained by dividing the photosensitive region into n sections in the second direction (D2) becomes gradually higher in the transfer direction (TD), and n is an integer of more than two. a plurality of photoelectric conversion sections including photosensitive regions and distributed in a first direction (D1), the photosensitive regions being arranged to generate a charge in response to incident light; and a plurality of transfer sections distributed in a second direction intersecting the first direction (D1) with corresponding photoelectric conversion sections of the plurality of photoelectric conversion sections and arranged to transfer the charge generated in the corresponding photoelectric conversion sections , wherein the photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region , and includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction, the second impurity region is provided from the one end of the photosensitive region or a vicinity of the one end to the other end of the photosensitive region , and has a shape that is line-symmetric with respect to a center line (G1) of the photosensitive region along the second direction (D2) in plan view, a width (W) of the second impurity region in the first direction (D1) increases in a transfer direction (TD) from the one end to the other end, and characterised in that an increase rate of the width (W) of the second impurity region in each of sections obtained by dividing the photosensitive region into n sections in the second direction (D2) becomes gradually higher in the transfer direction (TD), and n is an integer of more than two. <EOS>