A power semiconductor device, comprising: a substrate of a first conductivity type; a drain metal disposed on a first surface of the substrate ; a drift region of the first conductivity type and disposed on a second surface of the substrate , the second surface being opposite to the first surface; a base region of a second conductivity type and disposed in the drift region ; the first conductivity type and the second conductivity type being opposite conductivity types; a gate structure comprising a gate dielectric layer on the drift region and a gate on the gate dielectric layer , the gate structure extending above the base region ; a first-conductivity-type doping region in contact with the base region on one side of the base region away from the gate structure ; a source region of the first conductivity type and disposed in the base region and between the first-conductivity-type doping region and the gate structure ; a contact metal disposed on the first-conductivity-type doping region and forming a contact barrier having rectification characteristics with the first-conductivity-type doping region below, wherein a dimension of the contact metal in a first direction is greater than a dimension of the first-conductivity-type doping region in the first direction, such that the contact metal extends to a position above the base region next to the first-conductivity-type doping region and not reaching the source region , the first direction being a wiring direction between the gate and the contact metal ; and a source metal wrapping the contact metal and in contact with the source region ; characterized by a second-conductivity-type doping region disposed in the drift region , the second-conductivity-type doping region being disposed below the base region and the first-conductivity-type doping region and being in contact with the base region and the first-conductivity-type doping region . a substrate of a first conductivity type; a drain metal disposed on a first surface of the substrate ; a drift region of the first conductivity type and disposed on a second surface of the substrate , the second surface being opposite to the first surface; a base region of a second conductivity type and disposed in the drift region ; the first conductivity type and the second conductivity type being opposite conductivity types; a gate structure comprising a gate dielectric layer on the drift region and a gate on the gate dielectric layer , the gate structure extending above the base region ; a first-conductivity-type doping region in contact with the base region on one side of the base region away from the gate structure ; a source region of the first conductivity type and disposed in the base region and between the first-conductivity-type doping region and the gate structure ; a contact metal disposed on the first-conductivity-type doping region and forming a contact barrier having rectification characteristics with the first-conductivity-type doping region below, wherein a dimension of the contact metal in a first direction is greater than a dimension of the first-conductivity-type doping region in the first direction, such that the contact metal extends to a position above the base region next to the first-conductivity-type doping region and not reaching the source region , the first direction being a wiring direction between the gate and the contact metal ; and a source metal wrapping the contact metal and in contact with the source region ; characterized by a second-conductivity-type doping region disposed in the drift region , the second-conductivity-type doping region being disposed below the base region and the first-conductivity-type doping region and being in contact with the base region and the first-conductivity-type doping region . <EOS>