mhurhangee/patent-ind-claim-en huggingface dataset:
Method for predicting a range change as a result of switching a vehicle function (F1 - F5) of a vehicle on or off, in which a value of an amount of energy (E bat ) available in the vehicle is determined, a value is predicted of a first amount of energy (E 1 ) which, in a basic state, is expected to be consumed for a specific distance and/or travel duration, wherein a first range value (RW 1 ) is predicted from the predicted value of the first amount of energy (E 1 ) and the available amount of energy (E bat ), a value of a second amount of energy (E 2 ) is predicted which would be consumed or saved if the vehicle function (F1 - F5) were switched on or off, an ambient temperature (T) of the vehicle is detected, wherein the prediction of at least the value of the second amount of energy (E 2 ) is dependent on the ambient temperature (T) of the vehicle , a second range value (RW 2 ) is predicted from the values of the available amount of energy (E bat ), the first amount of energy (E 1 ), and the second amount of energy (E 2 ), by which second range value (RW 2 ) the first range value (RW 1 ) would be increased or decreased if the vehicle function (F1 - F5) were switched on or off, and the second range value (RW 2 ) is displayed, characterized in that the value of the second amount of energy (E 2 ) is predicted via the approximation function E 2 = a 3 T 2 + a 4 T + a 5 , wherein a 3 , a 4 , and as are parameters of the approximation function that are specific to the vehicle function (F1 - F5), and T is the ambient temperature (T) of the vehicle . a value of an amount of energy (E bat ) available in the vehicle is determined, a value is predicted of a first amount of energy (E 1 ) which, in a basic state, is expected to be consumed for a specific distance and/or travel duration, wherein a first range value (RW 1 ) is predicted from the predicted value of the first amount of energy (E 1 ) and the available amount of energy (E bat ), a value of a second amount of energy (E 2 ) is predicted which would be consumed or saved if the vehicle function (F1 - F5) were switched on or off, an ambient temperature (T) of the vehicle is detected, wherein the prediction of at least the value of the second amount of energy (E 2 ) is dependent on the ambient temperature (T) of the vehicle , a second range value (RW 2 ) is predicted from the values of the available amount of energy (E bat ), the first amount of energy (E 1 ), and the second amount of energy (E 2 ), by which second range value (RW 2 ) the first range value (RW 1 ) would be increased or decreased if the vehicle function (F1 - F5) were switched on or off, and the second range value (RW 2 ) is displayed,
Duplexer (D) comprising a transmit filter (TX) and a receive filter (RX), wherein - the transmit filter (TX) includes series-connected basic elements (GG) each having an electroacoustic resonator (R) and; - the transmit filter (TX) includes impedance transducers (IW) connected in series between the basic elements (GG), - the receive filter (RX) includes series-connected basic elements (GG) each having an electroacoustic resonator (R) and; - the receive filter (TX) includes impedance transducers (IW) connected in series between the basic elements (GG), - the impedance converters (IW) in the transmit filter (TX) are impedance inverters (K), - the resonators (R) of the basic elements (GG) in the transmit filter (TX) are only series resonators (S), - the impedance converters (IW) in the receive filter (RX) are admittance inverters (J), - the resonators (R) of the basic elements (GG) in the receive filter (RX) are only parallel resonators (P), and - at least one of the resonators (R) in the transmit filter (TX) and one of the resonators (R) in the receive filter (RX) are tunable. - the transmit filter (TX) includes series-connected basic elements (GG) each having an electroacoustic resonator (R) and; - the transmit filter (TX) includes impedance transducers (IW) connected in series between the basic elements (GG), - the receive filter (RX) includes series-connected basic elements (GG) each having an electroacoustic resonator (R) and; - the receive filter (TX) includes impedance transducers (IW) connected in series between the basic elements (GG), - the impedance converters (IW) in the transmit filter (TX) are impedance inverters (K), - the resonators (R) of the basic elements (GG) in the transmit filter (TX) are only series resonators (S), - the impedance converters (IW) in the receive filter (RX) are admittance inverters (J), - the resonators (R) of the basic elements (GG) in the receive filter (RX) are only parallel resonators (P), and - at least one of the resonators (R) in the transmit filter (TX) and one of the resonators (R) in the receive filter (RX) are tunable.
A light-concentrating solar energy system, comprising: a first Fresnel lens provided with at least one tooth surface, wherein each tooth surface has at least one Fresnel unit; a reflective Fresnel lens comprising a second Fresnel lens and a first reflecting surface , wherein the first reflecting surface is acted by the bottom surface of the reflective Fresnel lens; a second reflecting surface ; wherein the first Fresnel lens, the second Fresnel lens, the first reflecting surface and the second reflective surface are configured such that incident sunlight converges via the first Fresnel lens onto the second Fresnel lens, and then onto the first reflecting surface ; reflected sunlight converges via the second Fresnel lens again, and at least part of the reflected sunlight is reflected again at the second reflecting surface ; and a first photovoltaic panel is arranged to receive at least part of the sunlight reflected by the second reflecting surface ; wherein at least one reflecting surface is made of a conductive material with coating film and is connected to a control circuit in the system so as to heat the reflecting surface when it is powered. a first Fresnel lens provided with at least one tooth surface, wherein each tooth surface has at least one Fresnel unit; a reflective Fresnel lens comprising a second Fresnel lens and a first reflecting surface , wherein the first reflecting surface is acted by the bottom surface of the reflective Fresnel lens; a second reflecting surface ; wherein the first Fresnel lens, the second Fresnel lens, the first reflecting surface and the second reflective surface are configured such that incident sunlight converges via the first Fresnel lens onto the second Fresnel lens, and then onto the first reflecting surface ; reflected sunlight converges via the second Fresnel lens again, and at least part of the reflected sunlight is reflected again at the second reflecting surface ; and a first photovoltaic panel is arranged to receive at least part of the sunlight reflected by the second reflecting surface ; wherein at least one reflecting surface is made of a conductive material with coating film and is connected to a control circuit in the system so as to heat the reflecting surface when it is powered.
A process for manufacturing a MEMS device according to claim 11 comprising: forming a first structural layer of semiconductor material on a substrate , the first structural layer having a first thickness; forming a plurality of first trenches extending through the first structural layer and defining first functional elements ; forming masking regions on the first structural layer, the masking regions being separated from each other by first openings ; forming a second structural layer of semiconductor material on the first structural layer and on the masking regions , the second structural layer having a second thickness, being in direct contact with the first structural layer at the first openings and forming here, together with the first structural layer, thick structural regions of the semiconductor material having a third thickness equal to the sum of the first and the second thicknesses; forming a plurality of second trenches extending through the second structural layer , over the masking regions , and delimiting second functional elements having the second thickness; and forming a plurality of third trenches extending through the first and the second structural layers by removing selective portions of the thick structural regions , the third trenches delimiting third functional elements having the third thickness. forming a first structural layer of semiconductor material on a substrate , the first structural layer having a first thickness; forming a plurality of first trenches extending through the first structural layer and defining first functional elements ; forming masking regions on the first structural layer, the masking regions being separated from each other by first openings ; forming a second structural layer of semiconductor material on the first structural layer and on the masking regions , the second structural layer having a second thickness, being in direct contact with the first structural layer at the first openings and forming here, together with the first structural layer, thick structural regions of the semiconductor material having a third thickness equal to the sum of the first and the second thicknesses; forming a plurality of second trenches extending through the second structural layer , over the masking regions , and delimiting second functional elements having the second thickness; and forming a plurality of third trenches extending through the first and the second structural layers by removing selective portions of the thick structural regions , the third trenches delimiting third functional elements having the third thickness.
An equalization time configuration method, comprising: obtaining a port number of a master chip and an identity of a slave chip, and determining, by searching a channel type table, a type of a channel located between a port of the master chip and the slave chip, wherein the determined channel type is long reach, LR or short reach, SR; obtaining a physical layer, PHY type supported by the master chip and a PHY type supported by the slave chip, and determining whether both the PHY type supported by the master chip and the PHY type supported by the slave chip comprise the determined channel type, wherein each of the PHY type supported by the master chip and the PHY type supported by the slave chip is one of the following three: LR and SR, LR, or SR; when both the PHY type supported by the master chip and the PHY type supported by the slave chip comprise the determined channel type, determining working PHY types of the master chip and the slave chip, wherein both the working PHY types of the master chip and the slave chip are the same as the determined channel type; and configuring an equalization time of the master chip in a third phase of equalization based on the working PHY type of the slave chip, and configuring an equalization time of the slave chip in a fourth phase of the equalization based on the working PHY type of the master chip. obtaining a port number of a master chip and an identity of a slave chip, and determining, by searching a channel type table, a type of a channel located between a port of the master chip and the slave chip, wherein the determined channel type is long reach, LR or short reach, SR; obtaining a physical layer, PHY type supported by the master chip and a PHY type supported by the slave chip, and determining whether both the PHY type supported by the master chip and the PHY type supported by the slave chip comprise the determined channel type, wherein each of the PHY type supported by the master chip and the PHY type supported by the slave chip is one of the following three: LR and SR, LR, or SR; when both the PHY type supported by the master chip and the PHY type supported by the slave chip comprise the determined channel type, determining working PHY types of the master chip and the slave chip, wherein both the working PHY types of the master chip and the slave chip are the same as the determined channel type; and configuring an equalization time of the master chip in a third phase of equalization based on the working PHY type of the slave chip, and configuring an equalization time of the slave chip in a fourth phase of the equalization based on the working PHY type of the master chip.
Military wheeled vehicle having a signal generator for VHF signals in the military VHF band from 30 to 80 MHz and an antenna which is connected to the signal generator , characterized in that the signal generator and the antenna are connected, by means of a rotary coupling for contact-free transmission of a VHF signal in the military VHF band from 30 to 80 MHz, to a stator electrode and a rotor electrode which is capacitively coupled to the stator electrode and can rotate with respect to the stator electrode , wherein the stator electrode and/or the rotor electrode are/is segmented, wherein the segments (22.1, 22.2) of the stator electrode and/or the segments (12.1, 12.2) of the rotor electrode are embodied as circular ring segments, and wherein the length of the segments (22.1, 22.2) of the stator electrode and/or of the segments (12.1, 12.2) of the rotor electrode is less than 0.5 m.
A protective cover for slideways of a machine tool , comprising: - a driving cover member associable with a movable part of a machine tool movable translationally along the slideways ; - a plurality of first cover members located on a first side of the driving cover member and operatively associated therewith and configured to overlap and slide relative to each other along a direction of motion (G) of the slideway when the driving cover member moves; - a plurality of second cover members located on a second side of the driving cover member and operatively associated therewith and configured to overlap and slide relative to each other along a direction of motion (G) of the slideway when the driving cover member moves; - driving means configured to allow translational movement in a predetermined succession at least of the first cover members and the second cover members when a driving cover member moves; wherein the protective cover comprises a plurality of locking means operatively associated between the first cover members and the second cover members , each locking means of the plurality of locking means having at least two distinct locking parts to allow reversible coupling between each first cover member in the plurality of first cover members and a corresponding second cover member in the plurality of second cover members . - a driving cover member associable with a movable part of a machine tool movable translationally along the slideways ; - a plurality of first cover members located on a first side of the driving cover member and operatively associated therewith and configured to overlap and slide relative to each other along a direction of motion (G) of the slideway when the driving cover member moves; - a plurality of second cover members located on a second side of the driving cover member and operatively associated therewith and configured to overlap and slide relative to each other along a direction of motion (G) of the slideway when the driving cover member moves; - driving means configured to allow translational movement in a predetermined succession at least of the first cover members and the second cover members when a driving cover member moves;
A method in a wireless local area network, LAN, system, the method comprising: receiving, by a receiving apparatus, a short training field, STF, signal for a 80+80MHz band from a transmitting apparatus, wherein the STF signal for the 80+80MHz band is included in a physical protocol data unit, PPDU, wherein the STF signal for the 80+80MHz band is generated based on a first sequence, wherein the first sequence is defined as [HES HES1], wherein HES is a STF sequence for lower 80MHz band and defined as {M, 1, -M, 0, - M, 1, -M} ∗ (1+j)/sqrt , wherein HES1 is a STF sequence for upper 80MHz band and defined as {-M, -1, M, 0, -M, 1, -M} ∗ (1+j) ∗ sqrt(1/2), wherein the sqrt() represents square root, and wherein M is a preset sequence having 15 elements and is defined as {-1, -1, -1, 1, 1, 1, -1, 1, 1, 1, -1, 1, 1, -1, 1}. receiving, by a receiving apparatus, a short training field, STF, signal for a 80+80MHz band from a transmitting apparatus, wherein the STF signal for the 80+80MHz band is included in a physical protocol data unit, PPDU, wherein the STF signal for the 80+80MHz band is generated based on a first sequence, wherein the first sequence is defined as [HES HES1], wherein HES is a STF sequence for lower 80MHz band and defined as {M, 1, -M, 0, - M, 1, -M} ∗ (1+j)/sqrt , wherein HES1 is a STF sequence for upper 80MHz band and defined as {-M, -1, M, 0, -M, 1, -M} ∗ (1+j) ∗ sqrt(1/2), wherein the sqrt() represents square root, and wherein M is a preset sequence having 15 elements and is defined as {-1, -1, -1, 1, 1, 1, -1, 1, 1, 1, -1, 1, 1, -1, 1}.
A method, comprising: performing an atomic layer deposition sequence comprising at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle comprising introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously, and wherein the deposition cycle comprises an activation period and a regeneration period, and in the method: during the activation period, the first precursor species adsorbed to the substrate surface in a preceding regeneration period is excited by photon energy, whereby the adsorbed first precursor species reacts on the surface with the second precursor species which is in gas phase; and during a subsequent regeneration period, the first precursor species which is in gas phase reacts with the second precursor species adsorbed to the surface in the activation period. during the activation period, the first precursor species adsorbed to the substrate surface in a preceding regeneration period is excited by photon energy, whereby the adsorbed first precursor species reacts on the surface with the second precursor species which is in gas phase; and during a subsequent regeneration period, the first precursor species which is in gas phase reacts with the second precursor species adsorbed to the surface in the activation period.
A user equipment , comprising: a selector configured to select, in a random access procedure, whether to transmit a first uplink message or a second uplink message to a base station device, the first uplink message being an uplink message of a two-step random access procedure, the second uplink message being an uplink message of a four-step random access procedure; a transmitter/receiver configured to: transmit the selected first uplink message or the selected second uplink message to the base station device; and receive a random access response for the transmitted first uplink message or the transmitted second uplink message, characterized in that the random access response is scheduled by a Physical Downlink Control Channel, PDCCH, whose Cyclic Redundancy Check, CRC, is scrambled by a Random Access Radio Network Temporary Identifier, RA-RNTI, wherein the RA-RNTI is a first RA-RNTI used in the two-step random access procedure or a second RA-RNTI used in the four-step random access procedure, and wherein the first RA-RNTI used in the two-step random access procedure is calculated to include a predetermined offset value for the second RA-RNTI used in the four-step random access procedure. a selector configured to select, in a random access procedure, whether to transmit a first uplink message or a second uplink message to a base station device, the first uplink message being an uplink message of a two-step random access procedure, the second uplink message being an uplink message of a four-step random access procedure; a transmitter/receiver configured to: transmit the selected first uplink message or the selected second uplink message to the base station device; and receive a random access response for the transmitted first uplink message or the transmitted second uplink message, transmit the selected first uplink message or the selected second uplink message to the base station device; and receive a random access response for the transmitted first uplink message or the transmitted second uplink message, characterized in that the random access response is scheduled by a Physical Downlink Control Channel, PDCCH, whose Cyclic Redundancy Check, CRC, is scrambled by a Random Access Radio Network Temporary Identifier, RA-RNTI, wherein the RA-RNTI is a first RA-RNTI used in the two-step random access procedure or a second RA-RNTI used in the four-step random access procedure, and wherein the first RA-RNTI used in the two-step random access procedure is calculated to include a predetermined offset value for the second RA-RNTI used in the four-step random access procedure.
A substrate for an organic electronic device (OED), comprising: a flexible base film having a haze of 3 to 30% and a refractive index with respect to light having a wavelength of 550 nm of 1.7 or more; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23°C of 20 to 400 GPa, wherein the inorganic material layer has a thickness of 10 to 100 nm, wherein the inorganic material layer includes first and second sub layers, each having a thickness of 7 nm or less, wherein the inorganic material layer does not include a layer having a thickness of more than 7 nm, wherein the first sub layer and the second sub layer are stacked, are in contact with each other, and include different oxide layers, nitride layers, or oxynitride layers, respectively, wherein the first sub layer has a refractive index of 1.4 to 1.9, and the second sub layer has a refractive index of 2.0 to 2.6. a flexible base film having a haze of 3 to 30% and a refractive index with respect to light having a wavelength of 550 nm of 1.7 or more; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23°C of 20 to 400 GPa, wherein the inorganic material layer has a thickness of 10 to 100 nm, wherein the inorganic material layer includes first and second sub layers, each having a thickness of 7 nm or less, wherein the inorganic material layer does not include a layer having a thickness of more than 7 nm, wherein the first sub layer and the second sub layer are stacked, are in contact with each other, and include different oxide layers, nitride layers, or oxynitride layers, respectively, wherein the first sub layer has a refractive index of 1.4 to 1.9, and the second sub layer has a refractive index of 2.0 to 2.6.