An open through-substrate via , TSV, the through-substrate via comprising - a substantially planar substrate body including a semiconducting portion and an interlayer dielectric portion disposed in contact with the semiconducting portion , the semiconducting portion having a surface facing away from the interlayer dielectric portion ; - a trench extending from the surface at least through the semiconducting portion , the trench having side walls and a bottom wall ; - an insulation layer disposed onto at least a portion of the side walls and the surface ; - a metallization layer disposed onto at least a portion of the insulation layer that is disposed in contact with the side walls and onto at least a portion of the bottom wall ; - a redistribution layer disposed onto at least a portion of the metallization layer and onto a portion of the insulation layer that is disposed in contact with the surface ; and - a capping layer disposed onto at least a portion of the metallization layer and onto at least a portion of the redistribution layer ; wherein - the insulation layer and/or the capping layer comprise a first sublayer and a second sublayer , wherein the first sublayer is arranged between the surface and the second sublayer ; - the first sublayer extends into the trench; - the second sublayer is disposed in contact with the first sublayer without extending into the trench ; - the first sublayer has a tensile type or a compressive type of intrinsic stress; and - the second sublayer has an intrinsic stress of the respective other type or of the same type but different magnitude than that of the first sublayer . - a substantially planar substrate body including a semiconducting portion and an interlayer dielectric portion disposed in contact with the semiconducting portion , the semiconducting portion having a surface facing away from the interlayer dielectric portion ; - a trench extending from the surface at least through the semiconducting portion , the trench having side walls and a bottom wall ; - an insulation layer disposed onto at least a portion of the side walls and the surface ; - a metallization layer disposed onto at least a portion of the insulation layer that is disposed in contact with the side walls and onto at least a portion of the bottom wall ; - a redistribution layer disposed onto at least a portion of the metallization layer and onto a portion of the insulation layer that is disposed in contact with the surface ; and - a capping layer disposed onto at least a portion of the metallization layer and onto at least a portion of the redistribution layer ; wherein - the insulation layer and/or the capping layer comprise a first sublayer and a second sublayer , wherein the first sublayer is arranged between the surface and the second sublayer ; - the first sublayer extends into the trench; - the second sublayer is disposed in contact with the first sublayer without extending into the trench ; - the first sublayer has a tensile type or a compressive type of intrinsic stress; and - the second sublayer has an intrinsic stress of the respective other type or of the same type but different magnitude than that of the first sublayer . <EOS>