A solar cell , comprising: a crystal substrate which is a semiconductor having hew n-type conductivity; a first semiconductor layer (12; 50) which is continuously laminated on one main surface of the crystal substrate and a side surface of the crystal substrate and has the n-type conductivity; a second semiconductor layer (13; 53) which is continuously laminated on the other main surface of the crystal substrate and the side surface of the crystal substrate , and has p-type conductivity, at least a part of the second semiconductor layer (13; 53) overlapping the first semiconductor layer (12; 50) at the side surface of the crystal substrate ; a first transparent conductive film (14; 56) which is laminated on the first semiconductor layer (12; 50) and first non-film formation areas (30; 31; 32; 33) of the crystal substrate in which the first semiconductor layer (12; 50) is not formed over one main surface of the crystal substrate , wherein the first non-film formation areas (30; 31; 32; 33) are at an outer edge part on the one main surface of the crystal substrate , and has an area smaller than a planar shape of the crystal substrate ; and a second transparent conductive film (15; 57) which is laminated on the second semiconductor layer (13; 53) and second non-film formation areas (39; 40; 41; 43) of the crystal substrate in which the second semiconductor layer (13; 53) is not formed, wherein the second non-film formation areas (39; 40; 41; 43) are at an outer edge part on the other main surface of the crystal substrate , and wherein the first non-film formation areas (30; 31; 32; 33) and the second non-film formation areas (39; 40; 41; 43) respectively have up-and-down inverse relationships and dimensions in a normal direction with respect to an extension plane of the crystal substrate . a crystal substrate which is a semiconductor having hew n-type conductivity; a first semiconductor layer (12; 50) which is continuously laminated on one main surface of the crystal substrate and a side surface of the crystal substrate and has the n-type conductivity; a second semiconductor layer (13; 53) which is continuously laminated on the other main surface of the crystal substrate and the side surface of the crystal substrate , and has p-type conductivity, at least a part of the second semiconductor layer (13; 53) overlapping the first semiconductor layer (12; 50) at the side surface of the crystal substrate ; a first transparent conductive film (14; 56) which is laminated on the first semiconductor layer (12; 50) and first non-film formation areas (30; 31; 32; 33) of the crystal substrate in which the first semiconductor layer (12; 50) is not formed over one main surface of the crystal substrate , wherein the first non-film formation areas (30; 31; 32; 33) are at an outer edge part on the one main surface of the crystal substrate , and has an area smaller than a planar shape of the crystal substrate ; and a second transparent conductive film (15; 57) which is laminated on the second semiconductor layer (13; 53) and second non-film formation areas (39; 40; 41; 43) of the crystal substrate in which the second semiconductor layer (13; 53) is not formed, wherein the second non-film formation areas (39; 40; 41; 43) are at an outer edge part on the other main surface of the crystal substrate , and wherein the first non-film formation areas (30; 31; 32; 33) and the second non-film formation areas (39; 40; 41; 43) respectively have up-and-down inverse relationships and dimensions in a normal direction with respect to an extension plane of the crystal substrate . <EOS>