Laser light source for emitting coherent electromagnetic radiation with a vertical far-field beam profile , comprising - a semiconductor layer sequence for generating the coherent electromagnetic radiation with a substrate and an active region on the substrate , wherein the coherent electromagnetic radiation is emitted in operation at least from a main emission region of a radiation decoupling surface with an emission direction and the radiation decoupling surface is formed by a side surface of the semiconductor layer sequence , and - a filter element which suppresses coherent electromagnetic radiation generated during operation, which is emitted from a secondary emission region of the radiation decoupling surface which is vertically offset with respect to the main emission region and spatially separated, in the vertical far-field beam profile , the vertical direction being determined by a growth direction of layers of the semiconductor layer sequence, and a heat sink wherein the semiconductor layer sequence and the filter element are each arranged on the heat sink , and wherein the filter element has at least one of the following features: - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region , wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction. - a semiconductor layer sequence for generating the coherent electromagnetic radiation with a substrate and an active region on the substrate , wherein the coherent electromagnetic radiation is emitted in operation at least from a main emission region of a radiation decoupling surface with an emission direction and the radiation decoupling surface is formed by a side surface of the semiconductor layer sequence , and - a filter element which suppresses coherent electromagnetic radiation generated during operation, which is emitted from a secondary emission region of the radiation decoupling surface which is vertically offset with respect to the main emission region and spatially separated, in the vertical far-field beam profile , the vertical direction being determined by a growth direction of layers of the semiconductor layer sequence, and a heat sink wherein the semiconductor layer sequence and the filter element are each arranged on the heat sink , and wherein the filter element has at least one of the following features: - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region , wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction. - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region , wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction. <EOS>