A wet-type solar battery , comprising: a support composed of a light transmissive material; and a stack in which a conductive layer , a photoelectric conversion layer composed of a porous semiconductor, a porous insulating layer , and a counter electrode conductive layer are stacked in this order on said support , said conductive layer having a first region on which said photoelectric conversion layer is stacked and a second region on which said photoelectric conversion layer is not stacked, with a scribe line lying therebetween, and said photoelectric conversion layer being stacked on a part of a surface of said first region and a distance D from a peripheral portion of said first region facing said scribe line to a peripheral portion of said photoelectric conversion layer being not smaller than 50 μm and being not greater than 500 μm, a distance A from an outer periphery of said counter electrode conductive layer projected on a light receiving surface on a side not facing said scribe line to an outer periphery of said photoelectric conversion layer being not greater than 500 μm, wherein a film thickness Y of said porous insulating layer satisfies Y ≥ 0.02 ⁢ D + 6.5 , where Y represents said film thickness (μm) of said porous insulating layer and D represents said distance D (μm), and when the outer periphery of said photoelectric conversion layer is located inside the outer periphery of said counter electrode conductive layer , said distance A and said film thickness Y of said porous insulating layer satisfy Y ≥ 0.02 ⁢ A + 6.5 , where Y represents said film thickness (μm) of said porous insulating layer and A represents said distance A (μm). a support composed of a light transmissive material; and a stack in which a conductive layer , a photoelectric conversion layer composed of a porous semiconductor, a porous insulating layer , and a counter electrode conductive layer are stacked in this order on said support , said conductive layer having a first region on which said photoelectric conversion layer is stacked and a second region on which said photoelectric conversion layer is not stacked, with a scribe line lying therebetween, and said photoelectric conversion layer being stacked on a part of a surface of said first region and a distance D from a peripheral portion of said first region facing said scribe line to a peripheral portion of said photoelectric conversion layer being not smaller than 50 μm and being not greater than 500 μm, a distance A from an outer periphery of said counter electrode conductive layer projected on a light receiving surface on a side not facing said scribe line to an outer periphery of said photoelectric conversion layer being not greater than 500 μm, wherein a film thickness Y of said porous insulating layer satisfies Y ≥ 0.02 ⁢ D + 6.5 , where Y represents said film thickness (μm) of said porous insulating layer and D represents said distance D (μm), and when the outer periphery of said photoelectric conversion layer is located inside the outer periphery of said counter electrode conductive layer , said distance A and said film thickness Y of said porous insulating layer satisfy Y ≥ 0.02 ⁢ A + 6.5 , where Y represents said film thickness (μm) of said porous insulating layer and A represents said distance A (μm). <EOS>