mhurhangee/patent-ind-claim-en huggingface dataset:
An interferon alpha subtype, wherein the interferon alpha subtype is IFN-α14, HYBRID 1, HYBRID 2 or a combination of at least two of IFN-α14, HYBRID 1, and HYBRID 2 for use in the treatment and/or prophylaxis of pruritus, prurigo or neutrophilic dermatoses; wherein the IFN-α14 comprises or consists of an amino acid sequence SEQ ID NO:1; wherein the interferon alpha subtype HYBRID 1 comprises or consists of an amino acid sequence SEQ ID NO:2; and wherein the interferon alpha subtype HYBRID 2 comprises or consists of an amino acid sequence SEQ ID NO:3.
A synthetic organ comprising: one or more airways; and a first opening in communication with the one or more airways configured to introduce a vapor, aerosol, or other airborne material aerosol into the one or more airways; an organ-on-chip microfluidic device having lung tissue or cells ; and one or more mounting position(s) within the one or more airways configured to accept the organ-on-chip microfluidic device . one or more airways; and a first opening in communication with the one or more airways configured to introduce a vapor, aerosol, or other airborne material aerosol into the one or more airways; an organ-on-chip microfluidic device having lung tissue or cells ; and one or more mounting position(s) within the one or more airways configured to accept the organ-on-chip microfluidic device .
A pharmaceutical composition comprising a heat shock protein fused to a biotin-binding protein, wherein the biotin-binding protein is an anti-biotin antibody, avidin, streptavidin, neutravidin, or a protein that is at least 80% identical to avidin or streptavidin; and the biotin-binding protein is non-covalently bound to at least one, two, three, or four biotinylated antigens, antibodies, costimulatory molecules, cells or viruses.
An atomizer comprising: a fluid transport element in the form of a rigid, porous monolith, the fluid transport element having a first end and a second end; a conductive mesh heater circumferentially contacting at least a portion of an outer surface of the fluid transport element , the conductive mesh heater comprising a network of intercrossing, conductive filaments 335a that defines a first end with a first clasp and a second end with a second clasp , the first clasp and the second clasp being configured to secure the conductive mesh heater to the fluid transport element . a fluid transport element in the form of a rigid, porous monolith, the fluid transport element having a first end and a second end; a conductive mesh heater circumferentially contacting at least a portion of an outer surface of the fluid transport element , the conductive mesh heater comprising a network of intercrossing, conductive filaments 335a that defines a first end with a first clasp and a second end with a second clasp , the first clasp and the second clasp being configured to secure the conductive mesh heater to the fluid transport element .
A method comprising: Receiving , from user equipment, UE, a protocol data unit, PDU, session modification request message, the PDU session modification request message configured to indicate a request to modify a PDU session corresponding to a PDN connection established when in S1 mode, receiving the PDU session modification request message after a first inter-system change from S1 mode to N1 mode, and the PDU session modification request message may comprise g an information element, IE, set to a value indicative of a request for the PDU session to be an always-on protocol data unit, PDU, session; and based on local policies or configurations in a session management function, SMF, and, in an instance in which the always-on PDU session requested IE is comprised, further based on the always-on PDU session requested IE, determining whether to modify the requested PDU session to be an always-on PDU session and communicating the determination result to the UE. Receiving , from user equipment, UE, a protocol data unit, PDU, session modification request message, the PDU session modification request message configured to indicate a request to modify a PDU session corresponding to a PDN connection established when in S1 mode, receiving the PDU session modification request message after a first inter-system change from S1 mode to N1 mode, and the PDU session modification request message may comprise g an information element, IE, set to a value indicative of a request for the PDU session to be an always-on protocol data unit, PDU, session; and based on local policies or configurations in a session management function, SMF, and, in an instance in which the always-on PDU session requested IE is comprised, further based on the always-on PDU session requested IE, determining whether to modify the requested PDU session to be an always-on PDU session and communicating the determination result to the UE.
Method for assisting the management of at least one command list managed by at least one pilot of an aircraft, comprising - an identification step (E2), implemented by an identification unit , consisting in identifying at least one actuation element to be actuated in order to implement a current command from a command list; characterized in that the method furthermore comprises - a signalling step (E3), implemented by a signalling unit , consisting in visually highlighting the identified actuation element through a visual signal close to, on or around said actuation element; - a detection step (E4A), implemented by a detection unit , consisting in detecting a position of at least one hand of a pilot; - a checking step (E4B), implemented by a checking unit , consisting in checking whether the detected position of the hand of the pilot matches the position of the identified and highlighted actuation element for the purpose of actuating it; and - a first warning step (E6), implemented by a warning unit , consisting in warning the pilot of a risk of incorrect actuation in the event of a lack of a match between the detected position of the hand of the pilot and the position of the actuation element . - an identification step (E2), implemented by an identification unit , consisting in identifying at least one actuation element to be actuated in order to implement a current command from a command list; characterized in that the method furthermore comprises - a signalling step (E3), implemented by a signalling unit , consisting in visually highlighting the identified actuation element through a visual signal close to, on or around said actuation element; - a detection step (E4A), implemented by a detection unit , consisting in detecting a position of at least one hand of a pilot; - a checking step (E4B), implemented by a checking unit , consisting in checking whether the detected position of the hand of the pilot matches the position of the identified and highlighted actuation element for the purpose of actuating it; and - a first warning step (E6), implemented by a warning unit , consisting in warning the pilot of a risk of incorrect actuation in the event of a lack of a match between the detected position of the hand of the pilot and the position of the actuation element .
A method of making a hollow fiber membrane, the method comprising: (a) forming at least one coating composition comprising a solvent, dissolvable silica nanoparticles, and a membrane-forming polymer; (b) coating the at least one coating composition onto a filament; (c) carrying out phase inversion of the coating composition or coating compositions coated onto the filament; (d) dissolving the dissolvable silica nanoparticles and removing the filament from the coated filament to obtain a hollow fiber membrane; and optionally (e) washing the hollow fiber membrane obtained in (d); wherein the silica nanoparticles have a diameter of 50 nm to 1000 nm and a particle density of 1.93 to 1.96 g/cm 3 and are prepared by a method comprising: reacting an orthosilicate and an alcohol or a mixture of alcohols in an aqueous medium in the presence of a salt of a metal of Group Ia or Group IIa, or in the presence of a metalloid compound, optionally in combination with ammonium hydroxide, isolating the resulting nanoparticles, and treating the nanoparticles from with an acid; wherein the hollow fiber membrane has a hexagonal packing of pores and a void volume fraction of 66 % to 73 %. (a) forming at least one coating composition comprising a solvent, dissolvable silica nanoparticles, and a membrane-forming polymer; (b) coating the at least one coating composition onto a filament; (c) carrying out phase inversion of the coating composition or coating compositions coated onto the filament; (d) dissolving the dissolvable silica nanoparticles and removing the filament from the coated filament to obtain a hollow fiber membrane; and optionally (e) washing the hollow fiber membrane obtained in (d); wherein the silica nanoparticles have a diameter of 50 nm to 1000 nm and a particle density of 1.93 to 1.96 g/cm 3 and are prepared by a method comprising: reacting an orthosilicate and an alcohol or a mixture of alcohols in an aqueous medium in the presence of a salt of a metal of Group Ia or Group IIa, or in the presence of a metalloid compound, optionally in combination with ammonium hydroxide, isolating the resulting nanoparticles, and treating the nanoparticles from with an acid; wherein the hollow fiber membrane has a hexagonal packing of pores and a void volume fraction of 66 % to 73 %.
A semiconductor structure, comprising: a substrate having a memory device region and a logic device region ; a first dielectric layer on the substrate ; a plurality of memory stack structures on the first dielectric layer on the memory device region ; a single insulating layer continuously and conformally covering the memory stack structures and the first dielectric layer , wherein the single insulating layer directly contacts top surfaces and sidewalls of the memory stack structures , and a thickness (T5) of the single insulating layer on top surfaces of the memory stack structures is smaller than a thickness (T6) of the single insulating layer on sidewalls of the memory stack structures ; a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures ; an interconnecting structure formed in the second dielectric layer on the logic device region , wherein a top surface of the second dielectric layer on the memory device region and the logic region are coplanar, wherein the top surface of the second dielectric layer is flush with a top surface of the interconnecting structure and a top surface of the insulating layer , and the top surface of the interconnecting structure is higher than top surfaces of the memory stack structures . a substrate having a memory device region and a logic device region ; a first dielectric layer on the substrate ; a plurality of memory stack structures on the first dielectric layer on the memory device region ; a single insulating layer continuously and conformally covering the memory stack structures and the first dielectric layer , wherein the single insulating layer directly contacts top surfaces and sidewalls of the memory stack structures , and a thickness (T5) of the single insulating layer on top surfaces of the memory stack structures is smaller than a thickness (T6) of the single insulating layer on sidewalls of the memory stack structures ; a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures ; an interconnecting structure formed in the second dielectric layer on the logic device region , wherein a top surface of the second dielectric layer on the memory device region and the logic region are coplanar, wherein the top surface of the second dielectric layer is flush with a top surface of the interconnecting structure and a top surface of the insulating layer , and the top surface of the interconnecting structure is higher than top surfaces of the memory stack structures . wherein a top surface of the second dielectric layer on the memory device region and the logic region are coplanar, wherein the top surface of the second dielectric layer is flush with a top surface of the interconnecting structure and a top surface of the insulating layer , and the top surface of the interconnecting structure is higher than top surfaces of the memory stack structures .
A method for classifying left turns of a vehicle, comprising: receiving , by a processor of a mobile device, a sensor signal from a sensor residing in the mobile device while the vehicle is moving, where the signal is indicative of angular speed of the vehicle; identifying, by the processor, one or more bumps in the sensor signal; classifying , by the processor, a left turn made by the vehicle as being a protected left turn based on number of bumps identified in the sensor signal, wherein the left turn is classified as protected left turn in response to identifying one bump in the sensor signal and as unprotected left turn in response to identifying two bumps in the sensor signal; and storing the resulting classifications in a database. receiving , by a processor of a mobile device, a sensor signal from a sensor residing in the mobile device while the vehicle is moving, where the signal is indicative of angular speed of the vehicle; identifying, by the processor, one or more bumps in the sensor signal; classifying , by the processor, a left turn made by the vehicle as being a protected left turn based on number of bumps identified in the sensor signal, wherein the left turn is classified as protected left turn in response to identifying one bump in the sensor signal and as unprotected left turn in response to identifying two bumps in the sensor signal; and storing the resulting classifications in a database.
A compound of Formula (I) or an enantiomer, salt, and/or solvate thereof: wherein L is -C=C- or -C=C-; R 1 is C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, (CH 2 ) 0-2 C 3-10 cycloalkyl, (CH 2 ) 0-2 aryl, (CH 2 ) 0-2 heterocycloalkyl, or (CH 2 ) 0-2 heteroaryl, each being optionally substituted with one or more of halo, CN, OH, NH 2 , C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, NH(C 1-6 alkyl), N(C 1-6 alkyl)(C 1-6 alkyl), OC 1-6 alkyl, OC 2-6 alkenyl, OC 2-6 alkynyl, (CH 2 ) 0-2 C 3-10 cycloalkyl, (CH 2 ) 0-2 aryl, (CH 2 ) 0-2 heterocycloalkyl, (CH 2 ) 0-2 heteroaryl, O(CH 2 ) 0-2 C 3-10 cycloalkyl, O(CH 2 ) 0-2 aryl, O(CH 2 ) 0-2 heterocycloalkyl, or O(CH 2 ) 0-2 heteroaryl, the latter 16 groups being optionally substituted with one or more of halo, OH, NH 2 , C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl, OC 1-16 alkyl, OC 2-6 alkenyl, or OC 2-6 alkynyl; and R 2 is H, C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, cycloalkyl, aryl, heterocycloalkyl or heteroaryl, the latter 7 groups being optionally substituted with one or more of halo, OH, NH 2 , C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl, OC 1-16 alkyl, OC 2-6 alkenyl, or OC 2-6 alkynyl, wherein each alkyl, alkenyl, and alkynyl are optionally fluorosubstituted. L is -C=C- or -C=C-; R 1 is C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, (CH 2 ) 0-2 C 3-10 cycloalkyl, (CH 2 ) 0-2 aryl, (CH 2 ) 0-2 heterocycloalkyl, or (CH 2 ) 0-2 heteroaryl, each being optionally substituted with one or more of halo, CN, OH, NH 2 , C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, NH(C 1-6 alkyl), N(C 1-6 alkyl)(C 1-6 alkyl), OC 1-6 alkyl, OC 2-6 alkenyl, OC 2-6 alkynyl, (CH 2 ) 0-2 C 3-10 cycloalkyl, (CH 2 ) 0-2 aryl, (CH 2 ) 0-2 heterocycloalkyl, (CH 2 ) 0-2 heteroaryl, O(CH 2 ) 0-2 C 3-10 cycloalkyl, O(CH 2 ) 0-2 aryl, O(CH 2 ) 0-2 heterocycloalkyl, or O(CH 2 ) 0-2 heteroaryl, the latter 16 groups being optionally substituted with one or more of halo, OH, NH 2 , C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl, OC 1-16 alkyl, OC 2-6 alkenyl, or OC 2-6 alkynyl; and R 2 is H, C 1-10 alkyl, C 2-10 alkenyl, C 2-10 alkynyl, cycloalkyl, aryl, heterocycloalkyl or heteroaryl, the latter 7 groups being optionally substituted with one or more of halo, OH, NH 2 , C 1-6 alkyl, C 2-6 alkenyl, C 2-6 alkynyl, OC 1-16 alkyl, OC 2-6 alkenyl, or OC 2-6 alkynyl, wherein each alkyl, alkenyl, and alkynyl are optionally fluorosubstituted.
A method for selectively forming a metallic container , the method comprising: introducing a blank of material to tooling ; and forming the blank of material into a cup having a sidewall and a flat bottom portion closing the sidewall ; characterised in that the method comprises: crimping and locking a peripheral portion of the flat bottom portion so that the peripheral portion is secured in substantially fixed position to prevent movement of the peripheral portion into the flat bottom portion ; and in a subsequent forming step, stretching the flat bottom portion to form a thinned preselected profile . introducing a blank of material to tooling ; and forming the blank of material into a cup having a sidewall and a flat bottom portion closing the sidewall ; crimping and locking a peripheral portion of the flat bottom portion so that the peripheral portion is secured in substantially fixed position to prevent movement of the peripheral portion into the flat bottom portion ; and in a subsequent forming step, stretching the flat bottom portion to form a thinned preselected profile .
A grate block for a combustion grate, wherein the grate block comprises a block body that has an upper wall and defines a longitudinal axis L, wherein the upper wall forms a bearing face along which the incinerator charge is to be conveyed and the foremost end of which, when viewed in a thrust direction S, aligned substantially parallel to the longitudinal axis L, forms an edge by way of which the bearing face descends into a thrust surface formed by a front wall , the front wall has a lower bearing edge which is disposed in a plane E running substantially orthogonally to the longitudinal axis L and specified for coming into contact with the bearing face of a grate block adjacent in the thrust direction S, wherein the upper wall has an air supply opening formed by an air supply duct running through the upper wall , characterized in that the air supply opening is at least partially surrounded by a thickening which projects from the bearing face and forms a protection duct , which extends the length of the air supply duct , and is specified to prevent liquid flowing into the air supply opening , wherein the protection duct is enclosed by an inner flank of the thickening and the thickening has an outer flank that adjoins the inner flank and runs in a descending manner on the side that faces away from the protection duct .
Abase station comprising: • a processor configured to determine a quantity of preambles in a group of preambles that is allowable for a user terminal to use in a single contention-based random access procedure by calculating: k = argmax N M ! M − N ! × N ! wherein M indicates a quantity of available preambles available at the base station, the M available preambles are divided in k groups of allowable preambles, and N indicates a quantity of allowable preambles in each group of the k groups of allowable preambles; • a transmitter configured to transmit a notification to the user terminal, wherein the notification indicates the quantity N of preambles allowable for the user terminal to use; • a receiver configured to receive N preambles from the user terminal attempting to access the base station, wherein the N preambles are different to each other; • the processor configured to determine at least one random access response, RAR, to be transmitted based on the received N preambles; and • the transmitter configured to transmit the at least one determined RAR to the user terminal in response to the received N preambles. • a processor configured to determine a quantity of preambles in a group of preambles that is allowable for a user terminal to use in a single contention-based random access procedure by calculating: k = argmax N M ! M − N ! × N ! wherein M indicates a quantity of available preambles available at the base station, the M available preambles are divided in k groups of allowable preambles, and N indicates a quantity of allowable preambles in each group of the k groups of allowable preambles; • a transmitter configured to transmit a notification to the user terminal, wherein the notification indicates the quantity N of preambles allowable for the user terminal to use; • a receiver configured to receive N preambles from the user terminal attempting to access the base station, wherein the N preambles are different to each other; • the processor configured to determine at least one random access response, RAR, to be transmitted based on the received N preambles; and • the transmitter configured to transmit the at least one determined RAR to the user terminal in response to the received N preambles.
An electronic paper display screen, comprising a transparent electrode substrate , an upper transparent electrode , an electrophoretic display layer , and a pixel electrode , wherein the transparent electrode substrate , the upper transparent electrode , the electrophoretic display layer , and the pixel electrode are sequentially arranged from top to bottom and are sealed by a waterproof adhesive on edges; a conductive silver paste is provided between the upper transparent electrode and the pixel electrode , the electrophoretic display layer is a single layer microcapsule electrophoretic display layer or a single layer micro-cup electrophoretic display layer, characterized in that both the single layer microcapsule electrophoretic display layer or the single layer micro-cup electrophoretic display layer have adhesion by its own; this adhesion is achieved by a reversible heat curing method, so that the electrophoretic display layer is bonded to the pixel electrode by the reversible heat curing method based on their own adhesion, wherein the reversible heat curing is a reversible process of bonding and de-bonding by heating, temperature range of bonding and de-bonding in the reversible heat curing is 60-150°C and heating time range is 0-30 minutes.