A light emitting diode comprising: a light emitting diode structure including a first conductive type semiconductor layer , a second conductive type semiconductor layer , and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a buffer layer on the light emitting diode structure; and a filter layer on the buffer layer, wherein the filter layer comprises: a first dielectric layer having a first refractive index; and a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index, wherein the first refractive index is smaller than the second refractive index, wherein the light emitting diode comprises a support layer between the filter layer and the light emitting diode structure, wherein the first dielectric layer and the second dielectric layer are stacked at a plurality of periods, and wherein the outer periphery of the light emitting diode structure comprises four corner portions, characterized in that the support layer is disposed as a non-continuous ring structure on three corner portions out of the four corner portions at the outer periphery of the light emitting diode structure, and wherein said three corner portions of the support layer are spaced from each other. a light emitting diode structure including a first conductive type semiconductor layer , a second conductive type semiconductor layer , and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a buffer layer on the light emitting diode structure; and a filter layer on the buffer layer, wherein the filter layer comprises: a first dielectric layer having a first refractive index; and a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index, wherein the first refractive index is smaller than the second refractive index, wherein the light emitting diode comprises a support layer between the filter layer and the light emitting diode structure, wherein the first dielectric layer and the second dielectric layer are stacked at a plurality of periods, and wherein the outer periphery of the light emitting diode structure comprises four corner portions, characterized in that the support layer is disposed as a non-continuous ring structure on three corner portions out of the four corner portions at the outer periphery of the light emitting diode structure, and wherein said three corner portions of the support layer are spaced from each other. a first dielectric layer having a first refractive index; and a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index, wherein the first refractive index is smaller than the second refractive index, wherein the light emitting diode comprises a support layer between the filter layer and the light emitting diode structure, wherein the first dielectric layer and the second dielectric layer are stacked at a plurality of periods, and wherein the outer periphery of the light emitting diode structure comprises four corner portions, characterized in that the support layer is disposed as a non-continuous ring structure on three corner portions out of the four corner portions at the outer periphery of the light emitting diode structure, and wherein said three corner portions of the support layer are spaced from each other. <EOS>