A semiconductor light-emitting element comprising a lower clad layer that is provided on a substrate ; an active layer that is provided on the lower clad layer ; and an upper clad layer that is provided on the active layer , wherein the active layer includes: a first quantum well layer provided on a first barrier layer , a second barrier layer provided on the first quantum well layer , a plurality of quantum dots provided on the second barrier layer , , a third barrier layer provided on the plurality of quantum dots a second quantum well layer provided on the third barrier layer , and a fourth barrier layer provided on the second quantum well layer , characterised in that : thicknesses of the first and second quantum well layers are different from each other, a distance between each quantum well layer and the plurality of quantum dots is 1/2 of an average of distances between centers of the plurality of quantum dots , and thicknesses of the barrier layers between the quantum well layers and the plurality of quantum dots are thicknesses in which a tunnel current does not flow between the quantum well layers and the plurality of quantum dots . a lower clad layer that is provided on a substrate ; an active layer that is provided on the lower clad layer ; and an upper clad layer that is provided on the active layer , wherein the active layer includes: a first quantum well layer provided on a first barrier layer , a second barrier layer provided on the first quantum well layer , a plurality of quantum dots provided on the second barrier layer , , a third barrier layer provided on the plurality of quantum dots a second quantum well layer provided on the third barrier layer , and a fourth barrier layer provided on the second quantum well layer , characterised in that : thicknesses of the first and second quantum well layers are different from each other, a distance between each quantum well layer and the plurality of quantum dots is 1/2 of an average of distances between centers of the plurality of quantum dots , and thicknesses of the barrier layers between the quantum well layers and the plurality of quantum dots are thicknesses in which a tunnel current does not flow between the quantum well layers and the plurality of quantum dots . a first quantum well layer provided on a first barrier layer , a second barrier layer provided on the first quantum well layer , a plurality of quantum dots provided on the second barrier layer , , a third barrier layer provided on the plurality of quantum dots a second quantum well layer provided on the third barrier layer , and a fourth barrier layer provided on the second quantum well layer , characterised in that : thicknesses of the first and second quantum well layers are different from each other, a distance between each quantum well layer and the plurality of quantum dots is 1/2 of an average of distances between centers of the plurality of quantum dots , and thicknesses of the barrier layers between the quantum well layers and the plurality of quantum dots are thicknesses in which a tunnel current does not flow between the quantum well layers and the plurality of quantum dots . thicknesses of the first and second quantum well layers are different from each other, a distance between each quantum well layer and the plurality of quantum dots is 1/2 of an average of distances between centers of the plurality of quantum dots , and thicknesses of the barrier layers between the quantum well layers and the plurality of quantum dots are thicknesses in which a tunnel current does not flow between the quantum well layers and the plurality of quantum dots . <EOS>