mhurhangee/patent-ind-claim-en huggingface dataset:
A method of preparing recyclable packaging laminate film structure, comprising: (a) providing a first polymeric substrate and a second polymeric substrate, wherein the polymer of the first substrate has Hansen Solubility Parameters (HSP) of δD s1 (dispersion), δP s1 (polar), and δH s1 (hydrogen bonding); (b) applying and curing a separation layer coating composition onto the first polymeric substrate, wherein the separation layer coating composition comprises a polymer, wherein the polymer of the separation layer coating composition has HSP of δD c , δP c , and δH c , and Ro c (radius of the sphere of solubility); (c) wherein the distance between the polymer of the first polymeric substrate and the polymer of the separation coating composition Ra (s1,c) based on the HSP parameters of each polymer is 5 to 25, calculated according to the following equation : Ra s 1 , c 2 = 4 × δD s 1 − δD c 2 + δP s 1 − δP c 2 + δH s 1 − δH c 2 (d) applying a lamination adhesive layer either on the same side as the separation layer coating or on the side of the second polymeric substrate; and (e) forming a laminate structure wherein the separation layer coating and the adhesive are sandwiched between the first and second substrate; wherein the formed laminate is suitable for sealing to itself or to a pre-formed rigid or flexible shape to create a package or container; and wherein the laminate comprises one or more ink layers within the laminate structure, and the separation layer is acting as a primer for the one or more inks that are printed over it. (a) providing a first polymeric substrate and a second polymeric substrate, wherein the polymer of the first substrate has Hansen Solubility Parameters (HSP) of δD s1 (dispersion), δP s1 (polar), and δH s1 (hydrogen bonding); (b) applying and curing a separation layer coating composition onto the first polymeric substrate, wherein the separation layer coating composition comprises a polymer, wherein the polymer of the separation layer coating composition has HSP of δD c , δP c , and δH c , and Ro c (radius of the sphere of solubility); (c) wherein the distance between the polymer of the first polymeric substrate and the polymer of the separation coating composition Ra (s1,c) based on the HSP parameters of each polymer is 5 to 25, calculated according to the following equation : Ra s 1 , c 2 = 4 × δD s 1 − δD c 2 + δP s 1 − δP c 2 + δH s 1 − δH c 2 (d) applying a lamination adhesive layer either on the same side as the separation layer coating or on the side of the second polymeric substrate; and (e) forming a laminate structure wherein the separation layer coating and the adhesive are sandwiched between the first and second substrate;
Method for repairing at least one defect in a glass or glass-ceramic coating, wherein the glass or the glass-ceramic coating is arranged on a metallic or ceramic substrate, and for repairing defects on the metallic or ceramic substrate surface, wherein the method comprises the following method steps: ∘ applying enamel powder or enamel slip as a coating material to the at least one defect using a coating method, ∘ removing excess coating material that protrudes, ∘ drying the applied coating material, ∘ baking the applied coating material with the heat input, the method comprising the following steps: ▪ a first focused, high-energy heat input by laser irradiation with an associated melting of the radiation spot, ▪ a second defocused, low-energy heat input with controlled continuous cooling of the radiation spot, wherein the second defocused, low-energy heat input takes place by laser irradiation or inductively. ∘ applying enamel powder or enamel slip as a coating material to the at least one defect using a coating method, ∘ removing excess coating material that protrudes, ∘ drying the applied coating material, ∘ baking the applied coating material with the heat input, the method comprising the following steps: ▪ a first focused, high-energy heat input by laser irradiation with an associated melting of the radiation spot, ▪ a second defocused, low-energy heat input with controlled continuous cooling of the radiation spot, wherein the second defocused, low-energy heat input takes place by laser irradiation or inductively. ▪ a first focused, high-energy heat input by laser irradiation with an associated melting of the radiation spot, ▪ a second defocused, low-energy heat input with controlled continuous cooling of the radiation spot, wherein the second defocused, low-energy heat input takes place by laser irradiation or inductively.
A dialysis system, comprising: a dialysate flow path , the dialysate flow path comprising a dialyzer , dialysate pump , and a bicarbonate source ; and a sorbent cartridge receiving spent dialysate from the dialysate flow path for regeneration and return to the dialysate flow path; a processor programmed to obtain one or more patient parameters and one or more system parameters wherein the system parameters include sorbent cartridge mass, sorbent cartridge layer order, and sorbent cartridge pH and/or profile and to set a flow rate of bicarbonate from the bicarbonate source to the dialysate flow path for achieving a target patient bicarbonate concentration, wherein the processor sets the flow rate of bicarbonate from the bicarbonate source to the dialysate flow path based on a user specified patient post-dialysis bicarbonate level, which user specified patient post-dialysis bicarbonate level corresponds to the target patient bicarbonate concentration and whereby the system is instructed by the user to use this target for setting the bicarbonate flow rate. a dialysate flow path , the dialysate flow path comprising a dialyzer , dialysate pump , and a bicarbonate source ; and a sorbent cartridge receiving spent dialysate from the dialysate flow path for regeneration and return to the dialysate flow path; a processor programmed to obtain one or more patient parameters and one or more system parameters wherein the system parameters include sorbent cartridge mass, sorbent cartridge layer order, and sorbent cartridge pH and/or profile and to set a flow rate of bicarbonate from the bicarbonate source to the dialysate flow path for achieving a target patient bicarbonate concentration, wherein the processor sets the flow rate of bicarbonate from the bicarbonate source to the dialysate flow path based on a user specified patient post-dialysis bicarbonate level, which user specified patient post-dialysis bicarbonate level corresponds to the target patient bicarbonate concentration and whereby the system is instructed by the user to use this target for setting the bicarbonate flow rate.
A multiple nozzle attachment for a hair dryer comprising: a conical body having a rear portion and a distal portion, the rear portion having a circular diameter that is greater than a circular diameter of the distal portion to form a taper , the circular diameter of the rear portion forms a rear circular opening connectable to a barrel of the hair dryer; at least two nozzles extending distally from the conical body, each of the at least two nozzles having a distal end and a proximal end, wherein each distal end has a distal end opening ; and wherein each distal end opening has a length and a width , and each length is greater than each width , wherein the distal end opening of each nozzle lays in an imaginary nozzle plane , and each of the imaginary nozzle planes are positioned at an acute angle relative to an imaginary plane in which the rear circular opening lays and wherein each distal end opening of each nozzle lays in the same imaginary plane . a conical body having a rear portion and a distal portion, the rear portion having a circular diameter that is greater than a circular diameter of the distal portion to form a taper , the circular diameter of the rear portion forms a rear circular opening connectable to a barrel of the hair dryer; at least two nozzles extending distally from the conical body, each of the at least two nozzles having a distal end and a proximal end, wherein each distal end has a distal end opening ; and wherein each distal end opening has a length and a width , and each length is greater than each width , wherein the distal end opening of each nozzle lays in an imaginary nozzle plane , and each of the imaginary nozzle planes are positioned at an acute angle relative to an imaginary plane in which the rear circular opening lays and wherein each distal end opening of each nozzle lays in the same imaginary plane .
A vehicle , said vehicle including driver protection apparatus which is located at a position of the driver's head when operating the vehicle, said driver protection apparatus including a plurality of frame members selectively located or formed integrally with the body of the vehicle , a visual display system including one or a plurality of light sources located on at least one of said frame members which are selectively operated to provide an indication of the condition of the vehicle with respect to the mode of the vehicle, such as fuel and/or power levels or boost mode, and characterised in that the said visual display system and vehicle interact to allow signals of information relating to the mode of the vehicle to be sent from the vehicle to the visual display system to operate the one or more light sources to indicate the vehicle condition at a particular instant of time and to automatically send a signal of information indicating a change in said mode of the vehicle to change the light sources.
An amplifier with a first amplifier circuit , a second amplifier circuit , a hybrid-coupler circuit and a termination , wherein the hybrid-coupler circuit comprises an output port and an isolation port , wherein the termination is connected to the isolation port of the hybrid-coupler circuit , wherein the termination comprises a first ohmic resistor and a first capacitor and/or a first inductance , and wherein the first ohmic resistor and the first capacitor respectively the first inductance are connected in series, characterised in that the termination is a filter of a higher order than 1, and that the termination contains a switch.
A ripple generation device for a constant on-time voltage regulator, the ripple generation device comprising: a ripple generator configured to generate a ripple signal; a detector operably connected to the ripple generator and configured to detect a difference between a voltage of the ripple signal and a first reference voltage and a second reference voltage; and a feedback controller operably connected to the ripple generator and the detector and configured to generate a control signal for controlling the voltage of the ripple signal based on: (i) the detected difference, and (ii) a bias voltage receivable from an output of the constant on-time voltage regulator; wherein: if the voltage of the ripple signal is larger than the first reference voltage, then the feedback controller is configured to generate the control signal for reducing the voltage of the ripple signal; and if the voltage of the ripple signal is smaller than the second reference voltage, then the feedback controller is configured to generate the control signal for increasing the voltage of the ripple signal. a ripple generator configured to generate a ripple signal; a detector operably connected to the ripple generator and configured to detect a difference between a voltage of the ripple signal and a first reference voltage and a second reference voltage; and a feedback controller operably connected to the ripple generator and the detector and configured to generate a control signal for controlling the voltage of the ripple signal based on: (i) the detected difference, and (ii) a bias voltage receivable from an output of the constant on-time voltage regulator; wherein: if the voltage of the ripple signal is larger than the first reference voltage, then the feedback controller is configured to generate the control signal for reducing the voltage of the ripple signal; and if the voltage of the ripple signal is smaller than the second reference voltage, then the feedback controller is configured to generate the control signal for increasing the voltage of the ripple signal. if the voltage of the ripple signal is larger than the first reference voltage, then the feedback controller is configured to generate the control signal for reducing the voltage of the ripple signal; and if the voltage of the ripple signal is smaller than the second reference voltage, then the feedback controller is configured to generate the control signal for increasing the voltage of the ripple signal.
Support substrate made of monocrystalline silicon, having a front face and a rear face and comprising: - a surface region extending from the front face to a depth of between 800 nm and 2 microns, having fewer than ten crystal originated particles (COP) detected by a surface inspection based on dark-field reflection microscopy, - an upper region extending from the front face to a depth of between a few microns and 40 microns, which has an interstitial oxygen (Oi) content of less than or equal to 7.5E17 Oi/cm 3 and a resistivity greater than 500 ohm-cm, and - a lower region extending between the upper region and the rear face , which has a micro-defect (BMD) concentration of greater than or equal to 1E8/cm 3 . - a surface region extending from the front face to a depth of between 800 nm and 2 microns, having fewer than ten crystal originated particles (COP) detected by a surface inspection based on dark-field reflection microscopy, - an upper region extending from the front face to a depth of between a few microns and 40 microns, which has an interstitial oxygen (Oi) content of less than or equal to 7.5E17 Oi/cm 3 and a resistivity greater than 500 ohm-cm, and - a lower region extending between the upper region and the rear face , which has a micro-defect (BMD) concentration of greater than or equal to 1E8/cm 3 .
An image detector pixel circuit comprising: - a first voltage terminal, a second voltage terminal, a first control terminal (S1), a third control terminal (RD), a reset terminal (RST) and an output terminal (OUT); - a first node (n1), a second node (n2), a third node (n3); and - a photoelectric converter unit , an amplifier unit , a reset unit , a charging unit and a readout unit , wherein the photoelectric converter unit is connected to the first voltage terminal and to the first node (n1), and is configured to convert an optical signal into an electric signal at the first node (n1), wherein the amplifier unit is connected to the first node (n1), the second node (n2) and to the third node (n3), and is configured to amplify the electric signal at the first node (n1), wherein the reset unit is connected to a reset terminal (RST), the first voltage terminal and to the first node (n1), and is configured to reset the amplifier unit via the first node (n1) according to an input signal from the reset terminal (RST) and an input signal from the first voltage terminal, wherein the charging unit is connected to the first control terminal (S1), the second voltage terminal and to the second node (n2), and is configured to control a voltage at the second node (n2) according to an input signal from the first control terminal and an input signal from the second voltage terminal, and wherein the readout unit is connected to a third control terminal (RD) and to the third node (n3), and is configured to control an output signal at the output terminal (OUT) according to an input signal from the third control terminal (RD), characterized in that it further comprises a second control terminal (S2) and a compensation unit connected to said second control terminal (S2), the first node (n1) and to the third node (n3), and is configured to control a voltage at the third node (n3) to be equal to a voltage at the first node during a compensation phase according to an input signal from the second control terminal (S2). - a first voltage terminal, a second voltage terminal, a first control terminal (S1), a third control terminal (RD), a reset terminal (RST) and an output terminal (OUT); - a first node (n1), a second node (n2), a third node (n3); and - a photoelectric converter unit , an amplifier unit , a reset unit , a charging unit and a readout unit ,
A method, comprising: receiving, from a host device , a first signal modulated using a first modulation scheme that includes two levels; generating, at a memory controller and based at least in part on receiving the first signal, a second signal modulated using a second modulation scheme that includes three or more levels; and characterized in further comprising the steps of transmitting the second signal to a first memory die and a second memory die of a first plurality of memory dies that are coupled with the memory controller over a first through-silicon via (TSV) and to a second plurality of memory dies over a second TSV and a third TSV , wherein the first TSV is coupled with the first memory die and the second memory die, the second TSV is coupled with each memory die of the second plurality of memory dies , and the third TSV bypasses the first plurality of memory dies ; and accessing the first memory die, the second memory die, and the second plurality of memory dies concurrently based at least in part on the third TSV . receiving, from a host device , a first signal modulated using a first modulation scheme that includes two levels; generating, at a memory controller and based at least in part on receiving the first signal, a second signal modulated using a second modulation scheme that includes three or more levels; and characterized in further comprising the steps of transmitting the second signal to a first memory die and a second memory die of a first plurality of memory dies that are coupled with the memory controller over a first through-silicon via (TSV) and to a second plurality of memory dies over a second TSV and a third TSV , wherein the first TSV is coupled with the first memory die and the second memory die, the second TSV is coupled with each memory die of the second plurality of memory dies , and the third TSV bypasses the first plurality of memory dies ; and accessing the first memory die, the second memory die, and the second plurality of memory dies concurrently based at least in part on the third TSV .
Bevel planetary gear for a bevel planetary gearing for an adjustment device for adjusting two, adjustable to each other, components, wherein the bevel planetary gear - defines a planetary gear axis and - comprises a planetary gear toothing with a first planetary gear toothing end and a second planetary gear toothing end , wherein the first planetary gear toothing and the second planetary gear toothing are arranged, in relation to the planetary gear axis, at a distance to each other, characterized in that the planetary gear toothing has a diameter (DP1, DP2) that increases or decreases from the first planetary gear toothing end to the second planetary gear toothing end . - defines a planetary gear axis and - comprises a planetary gear toothing with a first planetary gear toothing end and a second planetary gear toothing end , wherein the first planetary gear toothing and the second planetary gear toothing are arranged, in relation to the planetary gear axis, at a distance to each other,
A device for maintaining the shape and/or position of an opening formed by a capsulorhexis in the anterior capsule, the device having a main body portion in the form of a ring with an opening therethrough, wherein the main body portion comprises a peripheral portion to engage with the inside peripheral edge of the opening in the anterior capsule, wherein the peripheral portion of the device is circular in shape, and includes a groove for retaining the inside peripheral edge of the opening in the anterior capsule, wherein the device is adapted such that when in position the ring protrudes anteriorly for 1-2 mm from the peripheral edge of the opening to minimize any gap that may exist between the anterior capsule and the posterior iris to block peripheral light and minimise dysphotopsia and wherein the device comprises a retaining flange above and below the groove , wherein when the device is in position, the flange provides a 1-3mm overlap with the peripheral edge of the opening .
A system for protecting a reflective optic from debris , comprising: a vacuum chamber configured to contain a target material , wherein a plasma is generated in response to an excitation of the target material , and wherein a reflective optic is configured to receive illumination emitted by the plasma; one or more outlets formed in the reflective optic configured to receive gas flowing from a fluidically coupled gas source , the one or more outlets being further configured to actively flow the gas towards a source of debris and away from the reflective optic at a controlled flow rate; and Characterised in that the system further comprises, a tubular structure , the outer surface of the tubular structure having a flange which is arranged to contact the inner surface of the vacuum chamber around its periphery, the tubular structure is a tubus having an axis which is the same as the optical axis defined by the excitation of the target material, the inner surface of the tubular structure bounding an outer edge of the reflective optic , the tubular structure extending away from the reflective optic towards the target material in a direction which is parallel to the optical axis such that the tubular structure is configured to prevent the gas from expanding outwards beyond the outer edge of the reflective optic , wherein the tubular structure is cooled and is configured to trap diffused vapor, thereby preventing the diffused vapor from reaching the reflective optic . a vacuum chamber configured to contain a target material , wherein a plasma is generated in response to an excitation of the target material , and wherein a reflective optic is configured to receive illumination emitted by the plasma; one or more outlets formed in the reflective optic configured to receive gas flowing from a fluidically coupled gas source , the one or more outlets being further configured to actively flow the gas towards a source of debris and away from the reflective optic at a controlled flow rate; and Characterised in that the system further comprises, a tubular structure , the outer surface of the tubular structure having a flange which is arranged to contact the inner surface of the vacuum chamber around its periphery, the tubular structure is a tubus having an axis which is the same as the optical axis defined by the excitation of the target material, the inner surface of the tubular structure bounding an outer edge of the reflective optic , the tubular structure extending away from the reflective optic towards the target material in a direction which is parallel to the optical axis such that the tubular structure is configured to prevent the gas from expanding outwards beyond the outer edge of the reflective optic , wherein the tubular structure is cooled and is configured to trap diffused vapor, thereby preventing the diffused vapor from reaching the reflective optic .