mhurhangee/patent-ind-claim-en huggingface dataset:
A method of manufacturing a magnetoresistive device , comprising: forming a first ferromagnetic region ; forming an intermediate region on or above the first ferromagnetic region, wherein the intermediate region is formed of a dielectric material comprising at least two different metal oxides; and forming a second ferromagnetic region on or above the intermediate region wherein forming the intermediate region includes (a) depositing a first oxidizable metal on or above the first ferromagnetic region to form a first layer, (b) oxidizing the first layer to form an at least partially oxidized first layer, (c) depositing the first oxidizable metal on or above the at least partially oxidized first layer to form a second layer, (d) oxidizing the second layer to form an at least partially oxidized second layer, (e) depositing the first oxidizable metal on or above the at least partially oxidized second layer to form a third layer, (f) oxidizing the third layer to form an at least partially oxidized third layer, and (g) depositing a second oxidizable metal on at least one of: (i) the at least partially oxidized first layer prior to step (c); (ii) the at least partially oxidized second layer prior to step (e); and (iii) the at least partially oxidized third layer. forming a first ferromagnetic region ; forming an intermediate region on or above the first ferromagnetic region, wherein the intermediate region is formed of a dielectric material comprising at least two different metal oxides; and forming a second ferromagnetic region on or above the intermediate region wherein forming the intermediate region includes (a) depositing a first oxidizable metal on or above the first ferromagnetic region to form a first layer, (b) oxidizing the first layer to form an at least partially oxidized first layer, (c) depositing the first oxidizable metal on or above the at least partially oxidized first layer to form a second layer, (d) oxidizing the second layer to form an at least partially oxidized second layer, (e) depositing the first oxidizable metal on or above the at least partially oxidized second layer to form a third layer, (f) oxidizing the third layer to form an at least partially oxidized third layer, and (g) depositing a second oxidizable metal on at least one of: (i) the at least partially oxidized first layer prior to step (c); (ii) the at least partially oxidized second layer prior to step (e); and (iii) the at least partially oxidized third layer. (i) the at least partially oxidized first layer prior to step (c); (ii) the at least partially oxidized second layer prior to step (e); and (iii) the at least partially oxidized third layer.
Method for pulling a single crystal according to the FZ method, in which a polycrystal is melted by means of an electromagnetic melting device and subsequently recrystallized, wherein in a first phase (P 1 ) a lower end of the polycrystal is melted by means of the melting device , wherein, in a second phase (P 2 ), a single-crystal seed ring is attached to the lower end of the polycrystal , and wherein, in a third phase (P 3 ), a thin-neck portion is formed between a lower portion of the seedling and the polycrystal , the diameter (d D ) of which is smaller than that (d I ) of the seedling , characterized in that a power of the melting device before the third phase (P 3 ) is dynamically adjusted at least temporarily as a function of a position of a lower phase boundary (P U ) between liquid material and solid material on the side of the inoculation , and in that the power of the melting device is dynamically adapted during the third phase (P 3 ) at least temporarily as a function of a position of an upper phase boundary (P O ) between liquid material and solid material on the side of the polycrystal , and a change of the dependence from the position of the lower phase boundary (P U ) is made directly to the dependence from the position of the upper phase boundary (P O ).
A coating layer comprising a reaction product of a diisocyanate compound (a) selected from the group consisting of aromatic diisocyanates, aliphatic diisocyanates, and alicyclic diisocyanates, a polyol (b), and a copolymer (c) having a functional group selected from the group consisting of carboxylic acid groups, carboxylic acid ester groups, and carboxylic acid anhydride groups, wherein the components (a) to (c) are reacted at a temperature of 10 to 85°C, the component (c) is a copolymer containing a maleic anhydride unit having a maleic anhydride group, and in the component (c), at least a part of the carboxylic acid ester group and the carboxylic acid anhydride group is converted into the carboxylic acid group.
A drive train , having: an internal combustion engine affected by torsional vibrations with a crankshaft, a gearbox with a gear input shaft , a torsional vibration damping operatively connected to the crankshaft and containing at least one operating point of low vibration isolation of the torsional vibrations, with a primary centrifugal mass associated with the crankshaft, and a secondary centrifugal mass associated with a gear input shaft and being rotatable contrary to said primary centrifugal mass relative to and to a limited extent against the action of a spring device , and an electric motor with a rotating mass operatively connected to the gearbox input shaft and a control unit, wherein the electric motor can be regulated by means of the control unit to a compensation torque (T harm ), which compensates for a disturbance torque (T dyn ) occurring at an operating point and affected by torsional vibrations, characterised in that the spring device is formed by linear springs, and the secondary centrifugal mass of the torsional vibration damping is integrated in one or more parts into a rotor of the electric motor . an internal combustion engine affected by torsional vibrations with a crankshaft, a gearbox with a gear input shaft , a torsional vibration damping operatively connected to the crankshaft and containing at least one operating point of low vibration isolation of the torsional vibrations, with a primary centrifugal mass associated with the crankshaft, and a secondary centrifugal mass associated with a gear input shaft and being rotatable contrary to said primary centrifugal mass relative to and to a limited extent against the action of a spring device , and an electric motor with a rotating mass operatively connected to the gearbox input shaft and a control unit, wherein the electric motor can be regulated by means of the control unit to a compensation torque (T harm ), which compensates for a disturbance torque (T dyn ) occurring at an operating point and affected by torsional vibrations, characterised in that the spring device is formed by linear springs, and the secondary centrifugal mass of the torsional vibration damping is integrated in one or more parts into a rotor of the electric motor .
Computing unit designed for carrying out the multiplication of at least two multiplicands (c,d), wherein the multiplicands (c,d) have in each case a first exponent ( ĉ , d̂ ) and a first base ( B c , B d ) , wherein the first bases ( B c , B d ) have in each case a second base, a second and a third exponent ( z c , z d ), comprising: at least one bitshift unit, wherein the bitshift unit shifts a binary number by a predeterminable number of places, in particular to the left; an arithmetic logic unit and a memory; wherein the arithmetic logic unit performs a subtraction of the third exponents ( z c , z d ), wherein the bitshift unit performs a first shift of a binary number of one of the first exponents ( d̂ ) of the multiplicands (c,d) by a number of places of a value of the subtracted exponents ( z d - z c ) and, wherein the arithmetic logic unit performs an addition of the result of the first shift with the further first exponent ( ĉ ) of the multiplicands (c,d), wherein the result of the addition is divided into an integer part and a fractional part, depending on a smaller exponent ( z b ) of the third exponents ( z c , z d ), wherein a binary number of the fractional part is read out from the memory, and wherein the bitshift unit performs a second shift of the binary number of the fractional part by the number of places of the value of the integer part. wherein the multiplicands (c,d) have in each case a first exponent ( ĉ , d̂ ) and a first base ( B c , B d ) , wherein the first bases ( B c , B d ) have in each case a second base, a second and a third exponent ( z c , z d ), comprising: at least one bitshift unit, wherein the bitshift unit shifts a binary number by a predeterminable number of places, in particular to the left; an arithmetic logic unit and a memory; wherein the arithmetic logic unit performs a subtraction of the third exponents ( z c , z d ), wherein the bitshift unit performs a first shift of a binary number of one of the first exponents ( d̂ ) of the multiplicands (c,d) by a number of places of a value of the subtracted exponents ( z d - z c ) and, wherein the arithmetic logic unit performs an addition of the result of the first shift with the further first exponent ( ĉ ) of the multiplicands (c,d), wherein the result of the addition is divided into an integer part and a fractional part, depending on a smaller exponent ( z b ) of the third exponents ( z c , z d ), wherein a binary number of the fractional part is read out from the memory, and wherein the bitshift unit performs a second shift of the binary number of the fractional part by the number of places of the value of the integer part.
A method for forming a nanopore device , comprising: providing a sapphire substrate wherein both the front side and the back side of the sapphire substrate are characterized by a c-plane orientation; forming a first oxide layer on a front side of the sapphire substrate and a second oxide layer on a back side of the sapphire substrate ; patterning the second oxide layer on a backside of the sapphire substrate to form an etch mask having a mask opening in the second oxide layer wherein the mask opening in the etch mask is triangular-shaped and each of three sides of the triangular-shaped mask opening being aligned with a hexagonal crystalline orientation of the sapphire substrate; performing a crystalline orientation dependent wet anisotropic etch on the backside of the sapphire substrate using the etch mask to form a cavity having sloped side walls through the sapphire substrate to expose a portion of the first oxide layer, each of the sloped side walls being a crystalline facet aligned with a respective crystalline plane; forming a silicon nitride membrane layer on the first oxide layer on the front side of the sapphire substrate ; removing the exposed portion of the first oxide layer in the cavity to expose a portion of the silicon nitride membrane layer such that the exposed portion of the silicon nitride membrane layer is suspended over the cavity in the sapphire substrate ; and forming an opening in the exposed portion of the silicon nitride membrane layer to form a nanopore . providing a sapphire substrate wherein both the front side and the back side of the sapphire substrate are characterized by a c-plane orientation; forming a first oxide layer on a front side of the sapphire substrate and a second oxide layer on a back side of the sapphire substrate ; patterning the second oxide layer on a backside of the sapphire substrate to form an etch mask having a mask opening in the second oxide layer wherein the mask opening in the etch mask is triangular-shaped and each of three sides of the triangular-shaped mask opening being aligned with a hexagonal crystalline orientation of the sapphire substrate; performing a crystalline orientation dependent wet anisotropic etch on the backside of the sapphire substrate using the etch mask to form a cavity having sloped side walls through the sapphire substrate to expose a portion of the first oxide layer, each of the sloped side walls being a crystalline facet aligned with a respective crystalline plane; forming a silicon nitride membrane layer on the first oxide layer on the front side of the sapphire substrate ; removing the exposed portion of the first oxide layer in the cavity to expose a portion of the silicon nitride membrane layer such that the exposed portion of the silicon nitride membrane layer is suspended over the cavity in the sapphire substrate ; and forming an opening in the exposed portion of the silicon nitride membrane layer to form a nanopore .
A wireless communication terminal that communicates wirelessly, the terminal comprising: a transceiver ; and a processor , wherein the processor is configured to receive a signaling field of a PLCP Protocol Data Unit, PPDU, through the transceiver , obtain a BSS color field from the signaling field, wherein the BSS color field indicates a BSS color which identifies BSS, and obtain an Address field of a MAC header included in the PPDU, wherein the Address field of the MAC header indicates a MAC address related to a MAC Protocol Data Unit, MPDU, characterized in that the processor is further configured to determine whether the PPDU includes an Inter-Basic Service Set, BSS, frame or an Intra-BSS frame based on at least one of a transmitting STA address, TA, field, a receiving STA address, RA, field, and a BSSID field of the Address field of the MAC header, further determine that the PPDU includes an Inter- BSS frame, when a BSS color indicated by the BSS color field is the same as a BSS color of a BSS including the wireless communication terminal and the Address field of the MAC header included in the PPDU indicates a BSS which is different from the BSS including the wireless communication terminal as a BSS from which the PPDU is transmitted, and access a channel based on the determination that the PPDU includes an Inter-BSS frame, wherein the maximum number of BSSs being able to be identified by the BSS color indicated by the BSS color field is smaller than the maximum number of BSSs being able to be identified by the MAC address. a transceiver ; and a processor , wherein the processor is configured to receive a signaling field of a PLCP Protocol Data Unit, PPDU, through the transceiver , obtain a BSS color field from the signaling field, wherein the BSS color field indicates a BSS color which identifies BSS, and obtain an Address field of a MAC header included in the PPDU, wherein the Address field of the MAC header indicates a MAC address related to a MAC Protocol Data Unit, MPDU, characterized in that the processor is further configured to determine whether the PPDU includes an Inter-Basic Service Set, BSS, frame or an Intra-BSS frame based on at least one of a transmitting STA address, TA, field, a receiving STA address, RA, field, and a BSSID field of the Address field of the MAC header, further determine that the PPDU includes an Inter- BSS frame, when a BSS color indicated by the BSS color field is the same as a BSS color of a BSS including the wireless communication terminal and the Address field of the MAC header included in the PPDU indicates a BSS which is different from the BSS including the wireless communication terminal as a BSS from which the PPDU is transmitted, and access a channel based on the determination that the PPDU includes an Inter-BSS frame, wherein the maximum number of BSSs being able to be identified by the BSS color indicated by the BSS color field is smaller than the maximum number of BSSs being able to be identified by the MAC address.
A fluid regulating device comprising: a valve having an inlet , an outlet , and a valve seat disposed between the inlet and the outlet for allowing fluid to flow through the valve; an actuator coupled to the valve and having a control assembly , the control assembly comprising a control element and a diaphragm operably connected to the control element , the control element disposed within the valve and adapted to be displaced relative to the valve seat for controlling the flow of a fluid between the inlet and the outlet ; a noise attenuation assembly coupled to the outlet , the noise attenuation assembly including a body and at least one plate having an outer edge and disposed within the body ; and characterised by an apparatus for retaining the at least one plate of the noise attenuation assembly , the apparatus including a plurality of rods coupled to the at least one plate , the plurality of rods including at least one rod disposed through the outer edge of each plate . a valve having an inlet , an outlet , and a valve seat disposed between the inlet and the outlet for allowing fluid to flow through the valve; an actuator coupled to the valve and having a control assembly , the control assembly comprising a control element and a diaphragm operably connected to the control element , the control element disposed within the valve and adapted to be displaced relative to the valve seat for controlling the flow of a fluid between the inlet and the outlet ; a noise attenuation assembly coupled to the outlet , the noise attenuation assembly including a body and at least one plate having an outer edge and disposed within the body ; and characterised by an apparatus for retaining the at least one plate of the noise attenuation assembly , the apparatus including a plurality of rods coupled to the at least one plate , the plurality of rods including at least one rod disposed through the outer edge of each plate .
Motor vehicle latch, comprising a locking mechanism consisting substantially of a catch and pawl , and comprising a sensor arrangement which is associated with the locking mechanism and has a fixed sensor and a sensing element which influences the signals of the sensor and follows the locking mechanism , or vice versa, the sensor generating at least two different signals (S 1 , S 2 ) associated with the presence and absence of the sensing element in the region of influence of the sensor , and further the single sensing element additionally bringing about at least one further, third signal (S 3 ) of the single sensor in accordance with the position thereof relative to the sensor , and the sensing element being arcuate, characterized in that - the arcuate shape of the sensing element is adapted to a pivoting movement of the catch to be sensed such that - the sensing element generates a largely linear signal of the sensor in accordance with an angle of rotation (Φ) of the catch in accordance with the position of the catch in the measuring region (A). the sensor generating at least two different signals (S 1 , S 2 ) associated with the presence and absence of the sensing element in the region of influence of the sensor , and further the single sensing element additionally bringing about at least one further, third signal (S 3 ) of the single sensor in accordance with the position thereof relative to the sensor , and the sensing element being arcuate, characterized in that - the arcuate shape of the sensing element is adapted to a pivoting movement of the catch to be sensed such that - the sensing element generates a largely linear signal of the sensor in accordance with an angle of rotation (Φ) of the catch in accordance with the position of the catch in the measuring region (A). - the arcuate shape of the sensing element is adapted to a pivoting movement of the catch to be sensed such that - the sensing element generates a largely linear signal of the sensor in accordance with an angle of rotation (Φ) of the catch in accordance with the position of the catch in the measuring region (A).
An article having an environmental barrier coating, said article comprising a substrate comprising a ceramic matrix composite and an environmental barrier coating deposited on the surface of the substrate, the environmental barrier coating comprising: a bond coat layer comprising silicon; and at least one rare earth silicate-based hermetic layer deposited on the bond coat layer by thermal spraying, wherein said rare earth silicate-based hermetic layer comprises a thermal sprayed coating comprising a rare earth silicate having a hermetic microstructure having a density of 85% or more of its theoretical density and wherein the hermetic microstructure comprises a closed porosity, said closed porosity comprising a porosity by volume of less than 15 percent. a bond coat layer comprising silicon; and at least one rare earth silicate-based hermetic layer deposited on the bond coat layer by thermal spraying, wherein said rare earth silicate-based hermetic layer comprises a thermal sprayed coating comprising a rare earth silicate having a hermetic microstructure having a density of 85% or more of its theoretical density and wherein the hermetic microstructure comprises a closed porosity, said closed porosity comprising a porosity by volume of less than 15 percent.
A method of making an adhesive article, the method comprising: providing a backing having first and second opposed major surfaces, wherein a first silicone release layer is disposed on the first major surface, wherein a second silicone release layer is disposed on the second major surface, and wherein the second silicone release layer further comprises a compound represented by the formula: wherein R 1 represents a hydrocarbyl group having from 2 to 40 carbon atoms; R f represents a perfluorinated group having from 3 to 5 carbon atoms; X 1 represents -NH- or a covalent bond; and an amount of organic solvent sufficient to dissolve at least a portion of the compound in the second silicone release layer; disposing an adhesive layer onto the first silicone release layer; and exposing at least the adhesive layer to electron beam radiation within a process chamber thereby providing a crosslinked adhesive layer, wherein the process chamber contains oxygen, wherein the second silicone release layer is exposed to the oxygen during crosslinking of the adhesive layer. providing a backing having first and second opposed major surfaces, wherein a first silicone release layer is disposed on the first major surface, wherein a second silicone release layer is disposed on the second major surface, and wherein the second silicone release layer further comprises a compound represented by the formula: wherein R 1 represents a hydrocarbyl group having from 2 to 40 carbon atoms; R f represents a perfluorinated group having from 3 to 5 carbon atoms; X 1 represents -NH- or a covalent bond; and an amount of organic solvent sufficient to dissolve at least a portion of the compound in the second silicone release layer; R 1 represents a hydrocarbyl group having from 2 to 40 carbon atoms; R f represents a perfluorinated group having from 3 to 5 carbon atoms; X 1 represents -NH- or a covalent bond; and an amount of organic solvent sufficient to dissolve at least a portion of the compound in the second silicone release layer; disposing an adhesive layer onto the first silicone release layer; and exposing at least the adhesive layer to electron beam radiation within a process chamber thereby providing a crosslinked adhesive layer, wherein the process chamber contains oxygen, wherein the second silicone release layer is exposed to the oxygen during crosslinking of the adhesive layer.
A method comprising, in a single trip in a well bore , the steps: (a) running a tool string downhole in the well bore , the tool string including a casing cutter and a stinger ; (b) passing a fluidised plugging material through the casing cutter and the stinger to deposit a quantity of the fluidised plugging material into the well bore to form a plug ; (c) drawing the stinger out of at least a portion of the deposited fluidised plugging material; and (d) using the casing cutter to part an upper length of casing from a lower length of casing. (a) running a tool string downhole in the well bore , the tool string including a casing cutter and a stinger ; (b) passing a fluidised plugging material through the casing cutter and the stinger to deposit a quantity of the fluidised plugging material into the well bore to form a plug ; (c) drawing the stinger out of at least a portion of the deposited fluidised plugging material; and (d) using the casing cutter to part an upper length of casing from a lower length of casing.