An RF circuit assembly , the assembly comprising: an RF device comprising: a ceramic layer including a ceramic surface area having a first ceramic major surface and a second ceramic major surface, the ceramic layer being characterized by a ceramic layer dielectric constant, a ceramic layer thickness, and a ceramic modulus of elasticity, the ceramic layer also including an RF circuit arrangement (120-1, 120-2, 120) having a predetermined geometry and predetermined electrical characteristics, the ceramic layer being configured to dissipate thermal energy generated by the RF circuit arrangement (120-1, 120-2, 120) via the ceramic surface area; and a first dielectric layer (14-2, 14) including a first outer major surface and a first inner major surface coupled to the second ceramic major surface, the first dielectric layer (14-2, 14) having a predetermined first thickness, a first dielectric constant and a predetermined first modulus of elasticity, the predetermined electrical characteristics of the RF circuit arrangement (120-1, 120-2, 120) being a function of the ceramic layer dielectric constant, the ceramic layer thickness, the first dielectric constant, the predetermined first thickness and the predetermined geometry; and an RF circuit assembly interface comprising a metallic flange , having a modulus of elasticity, the first outer major surface of the first dielectric layer coupled to the RF circuit assembly interface , the predetermined first modulus of elasticity being substantially lower than the modulus of elasticity and the ceramic modulus of elasticity such that the first dielectric layer conforms to the ceramic layer and the RF circuit assembly interface when the RF device operating temperature cycles between a maximum and minimum value. a ceramic layer including a ceramic surface area having a first ceramic major surface and a second ceramic major surface, the ceramic layer being characterized by a ceramic layer dielectric constant, a ceramic layer thickness, and a ceramic modulus of elasticity, the ceramic layer also including an RF circuit arrangement (120-1, 120-2, 120) having a predetermined geometry and predetermined electrical characteristics, the ceramic layer being configured to dissipate thermal energy generated by the RF circuit arrangement (120-1, 120-2, 120) via the ceramic surface area; and a first dielectric layer (14-2, 14) including a first outer major surface and a first inner major surface coupled to the second ceramic major surface, the first dielectric layer (14-2, 14) having a predetermined first thickness, a first dielectric constant and a predetermined first modulus of elasticity, the predetermined electrical characteristics of the RF circuit arrangement (120-1, 120-2, 120) being a function of the ceramic layer dielectric constant, the ceramic layer thickness, the first dielectric constant, the predetermined first thickness and the predetermined geometry; and an RF circuit assembly interface comprising a metallic flange , having a modulus of elasticity, the first outer major surface of the first dielectric layer coupled to the RF circuit assembly interface , the predetermined first modulus of elasticity being substantially lower than the modulus of elasticity and the ceramic modulus of elasticity such that the first dielectric layer conforms to the ceramic layer and the RF circuit assembly interface when the RF device operating temperature cycles between a maximum and minimum value. <EOS>