mhurhangee/patent-ind-claim-en huggingface dataset:
A magnetic flowmeter for sensing process fluid flow, the flowmeter comprising: a tube configured to receive the process fluid flow therethrough; a plurality of electrodes disposed to contact process fluid; at least one electromagnetic coil disposed proximate the tube; flowmeter electronics configured to drive a current through the at least one electromagnetic coil and to sense a signal developed across the plurality of electrodes; and a flexible circuit module disposed proximate the tube , the flexible circuit module having at least one flexible circuit containing a plurality of electrical traces electrically coupled to the flowmeter electronics, wherein the at least one electromagnetic coil includes a first coil in the flexible circuit module that is coupled to the electrical traces, wherein the flowmeter further comprises a gasketed leading edge coupled to the tube , wherein the gasketed leading edge is configured to be mounted between a pair of pipe flanges , the gasketed leading edge having a first surface for contacting a first pipe flange and a second surface for contacting a second flange , wherein the tube is displaced downstream from the gasketed leading edge , wherein the flowmeter is a coaxial, insertion- type magnetic flowmeter, and wherein the gasketed leading edge includes a sealed portion that allows signal and power conductors , which are connected to the at least one electromagnetic coil and the plurality of electrodes, to pass therethrough, the conductors being configured to be coupled to the flowmeter electronics . a tube configured to receive the process fluid flow therethrough; a plurality of electrodes disposed to contact process fluid; at least one electromagnetic coil disposed proximate the tube; flowmeter electronics configured to drive a current through the at least one electromagnetic coil and to sense a signal developed across the plurality of electrodes; and a flexible circuit module disposed proximate the tube , the flexible circuit module having at least one flexible circuit containing a plurality of electrical traces electrically coupled to the flowmeter electronics, wherein the at least one electromagnetic coil includes a first coil in the flexible circuit module that is coupled to the electrical traces, wherein the flowmeter further comprises a gasketed leading edge coupled to the tube , wherein the gasketed leading edge is configured to be mounted between a pair of pipe flanges , the gasketed leading edge having a first surface for contacting a first pipe flange and a second surface for contacting a second flange , wherein the tube is displaced downstream from the gasketed leading edge , wherein the flowmeter is a coaxial, insertion- type magnetic flowmeter, and wherein the gasketed leading edge includes a sealed portion that allows signal and power conductors , which are connected to the at least one electromagnetic coil and the plurality of electrodes, to pass therethrough, the conductors being configured to be coupled to the flowmeter electronics .
A method of selecting a treatment for a subject with prostate cancer, comprising: (a) measuring the expression level of KDM5D in a sample from the subject, and (b) comparing the expression level of KDM5D in the sample from the subject to an expression level of KDM5D in a control sample, wherein the control sample is a normal prostate tissue or a primary prostate tumor, wherein, if the expression level of KDM5D in the sample from the subject is the same as or higher than the expression level of KDM5D in the control sample, then administration of a taxane and an androgen deprivation therapy (ADT) does not provide a higher likelihood of improvement in one or more symptoms of the subject's prostate cancer, does not provide a higher likelihood of improvement in the subject's cancer load, or both, than administration of a taxane without ADT or administration of ADT without a taxane, or wherein, if the expression level of KDM5D in the sample from the subject is lower than the expression level in the control sample, then administration of a taxane and an ADT provides a higher likelihood of improvement in one or more symptoms of the subject's prostate cancer, provides a higher likelihood of improvement in the subject's cancer load, or both, than administration of a taxane without ADT or administration of ADT without a taxane. (a) measuring the expression level of KDM5D in a sample from the subject, and (b) comparing the expression level of KDM5D in the sample from the subject to an expression level of KDM5D in a control sample, wherein the control sample is a normal prostate tissue or a primary prostate tumor,
A computer implemented method of analyzing a tumor sample genome for a mutation load, comprising: detecting variants in a plurality of nucleic acid sequence reads to produce a plurality of detected variants, wherein the nucleic acid sequence reads correspond to a plurality of targeted locations in the tumor sample genome, the plurality of targeted locations corresponding to target gene sequences of a targeted panel, wherein the detected variants include somatic variants and germ-line variants; annotating one or more detected variants of the plurality of detected variants with an annotation information from one or more population databases, wherein the population databases include information associated with variants in a population, wherein the annotation information includes a minor allele frequency associated with a given variant; filtering the plurality of detected variants, wherein the filtering applies a rule set to the detected variants to retain the somatic variants, the rule set including retaining the detected variants whose minor allele frequency (MAF) is within a MAF range and wherein the MAF range is from 0 to 10 -6 , wherein the filtering produces identified somatic variants; counting the identified somatic variants to give a number of somatic variants; determining a number of bases in covered regions of the targeted locations in the tumor sample genome; and calculating a number of somatic variants per megabase by dividing the number of identified somatic variants by the number of bases in the covered regions to produce the mutation load for the tumor sample genome. detecting variants in a plurality of nucleic acid sequence reads to produce a plurality of detected variants, wherein the nucleic acid sequence reads correspond to a plurality of targeted locations in the tumor sample genome, the plurality of targeted locations corresponding to target gene sequences of a targeted panel, wherein the detected variants include somatic variants and germ-line variants; annotating one or more detected variants of the plurality of detected variants with an annotation information from one or more population databases, wherein the population databases include information associated with variants in a population, wherein the annotation information includes a minor allele frequency associated with a given variant; filtering the plurality of detected variants, wherein the filtering applies a rule set to the detected variants to retain the somatic variants, the rule set including retaining the detected variants whose minor allele frequency (MAF) is within a MAF range and wherein the MAF range is from 0 to 10 -6 , wherein the filtering produces identified somatic variants; counting the identified somatic variants to give a number of somatic variants; determining a number of bases in covered regions of the targeted locations in the tumor sample genome; and calculating a number of somatic variants per megabase by dividing the number of identified somatic variants by the number of bases in the covered regions to produce the mutation load for the tumor sample genome.
A method of wireless communication at a wireless node (115; 115-a; 115-b; 115-c; 115-d; 115-e; 115-f; 155-g; 115-h; 105; 105-a; 105-b; 105-c; 105-d; 105-e; 105-f; 105-g; 105-h), comprising: identifying a set of resources for a user equipment, UE (115; 115-a; 115-b; 115-c; 115-d; 115-e; 115-f; 155-g; 115-h), in a narrowband control region based at least in part on a resource element indexing configuration associated with a cell-specific reference signal, CRS, based demodulation scheme; mapping a set of modulation symbols to the set of resources, wherein the mapping excludes a broadband control region from the set; transmitting a message indicating a size of the broadband control region to be excluded; transmitting a control channel to the UE (115; 115-a; 115-b; 115-c; 115-d; 115-e; 115-f; 155-g; 115-h) using the set of resources; and transmitting a CRS in a same resource block as the set of resources. identifying a set of resources for a user equipment, UE (115; 115-a; 115-b; 115-c; 115-d; 115-e; 115-f; 155-g; 115-h), in a narrowband control region based at least in part on a resource element indexing configuration associated with a cell-specific reference signal, CRS, based demodulation scheme; mapping a set of modulation symbols to the set of resources, wherein the mapping excludes a broadband control region from the set; transmitting a message indicating a size of the broadband control region to be excluded; transmitting a control channel to the UE (115; 115-a; 115-b; 115-c; 115-d; 115-e; 115-f; 155-g; 115-h) using the set of resources; and transmitting a CRS in a same resource block as the set of resources.
A bispecific antibody construct comprising a first binding domain which binds to human CD70 on the surface of a target cell and a second binding domain which binds to human CD3 on the surface of a T cell, wherein the first binding domain comprises a VH region comprising CDR-H1, CDR-H2 and CDR-H3 and a VL region comprising CDR-L1, CDR-L2 and CDR-L3, wherein said CDR-H1, CDR-H2, CDR-H3, CDR-L1, CDR-L2 and CDR-L3 are selected from the group consisting of those depicted in: 1) SEQ: ID NOs: 1044-1049; 2) SEQ: ID NOs: 1086-1091; 3) SEQ: ID NOs: 1142-1147; 4) SEQ: ID NOs: 1170-1175; 5) SEQ: ID NOs: 1184-1189; 6) SEQ: ID NOs: 1212-1217; 7) SEQ: ID NOs: 1226-1231; 8) SEQ: ID NOs: 1240-1245; 9) SEQ: ID NOs: 1254-1259; 10) SEQ: ID NOs: 1268-1273; 11) SEQ: ID NOs: 1338-1343; 12) SEQ: ID NOs: 1352-1357; 13) SEQ: ID NOs: 1366-1371; 14) SEQ: ID NOs: 1422-1427; and 15) SEQ: ID NOs: 1436-1441. 1) SEQ: ID NOs: 1044-1049; 2) SEQ: ID NOs: 1086-1091; 3) SEQ: ID NOs: 1142-1147; 4) SEQ: ID NOs: 1170-1175; 5) SEQ: ID NOs: 1184-1189; 6) SEQ: ID NOs: 1212-1217; 7) SEQ: ID NOs: 1226-1231; 8) SEQ: ID NOs: 1240-1245; 9) SEQ: ID NOs: 1254-1259; 10) SEQ: ID NOs: 1268-1273; 11) SEQ: ID NOs: 1338-1343; 12) SEQ: ID NOs: 1352-1357; 13) SEQ: ID NOs: 1366-1371; 14) SEQ: ID NOs: 1422-1427; and 15) SEQ: ID NOs: 1436-1441.
A method for manufacturing a solar cell, comprising: forming a semiconductor layer of a second conductive type in a first surface of a polycrystalline silicon wafer of a first conductive type by means of ion implantation to a predetermined ion implantation depth to form a pn junction in an interface thereof, wherein as a result the semiconductor layer consists in a first region extending from the surface of the polycrystalline silicon wafer to a first depth and having a first ion concentration and a second region extending from the first depth to a second depth exceeding the first depth and having a second ion concentration, the second ion concentration being higher than the first ion concentration; after the step of forming the semiconductor layer , texturing the first region of the semiconductor layer using an alkali solution so as to form a plurality of uniform protrusions on the second region, wherein the second region functions as an etch stop layer such that the texturing is conducted only to the first region; forming an antireflection film on the textured semiconductor layer ; forming a front electrode passing through a partial region of the antireflection film and connect to the second region of the semiconductor layer ; and forming a rear electrode on a second surface of the polycrystalline silicon wafer opposite the first surface such that the rear electrode is connected to the polycrystalline silicon wafer . forming a semiconductor layer of a second conductive type in a first surface of a polycrystalline silicon wafer of a first conductive type by means of ion implantation to a predetermined ion implantation depth to form a pn junction in an interface thereof, wherein as a result the semiconductor layer consists in a first region extending from the surface of the polycrystalline silicon wafer to a first depth and having a first ion concentration and a second region extending from the first depth to a second depth exceeding the first depth and having a second ion concentration, the second ion concentration being higher than the first ion concentration; after the step of forming the semiconductor layer , texturing the first region of the semiconductor layer using an alkali solution so as to form a plurality of uniform protrusions on the second region, wherein the second region functions as an etch stop layer such that the texturing is conducted only to the first region; forming an antireflection film on the textured semiconductor layer ; forming a front electrode passing through a partial region of the antireflection film and connect to the second region of the semiconductor layer ; and forming a rear electrode on a second surface of the polycrystalline silicon wafer opposite the first surface such that the rear electrode is connected to the polycrystalline silicon wafer .
A communication method, comprising: receiving (S110), by customer premises equipment, CPE, configuration information of a first link and configuration information of a second link that are sent by a home access gateway, wherein the first link is a link between the CPE and the home access gateway, the second link is a link between the CPE and user equipment, UE, the configuration information of the first link is used to indicate quality of service, QoS information of the first link, and the configuration information of the second link is used to indicate QoS information of the second link; sending (S111), by the CPE, the configuration information of the second link to the UE; determining, by the CPE, a QoS parameter of a data packet of the UE based on the configuration information of the first link and the configuration information of the second link; and sending (S115), by the CPE, the data packet based on the QoS parameter of the data packet; wherein the first link is a 3GPP link and the second link is a non-3GPP link; characterized in that the data packet carries second indication information that is used to indicate that content in the data packet is control plane signaling or user plane data. receiving (S110), by customer premises equipment, CPE, configuration information of a first link and configuration information of a second link that are sent by a home access gateway, wherein the first link is a link between the CPE and the home access gateway, the second link is a link between the CPE and user equipment, UE, the configuration information of the first link is used to indicate quality of service, QoS information of the first link, and the configuration information of the second link is used to indicate QoS information of the second link; sending (S111), by the CPE, the configuration information of the second link to the UE; determining, by the CPE, a QoS parameter of a data packet of the UE based on the configuration information of the first link and the configuration information of the second link; and sending (S115), by the CPE, the data packet based on the QoS parameter of the data packet; wherein the first link is a 3GPP link and the second link is a non-3GPP link; characterized in that the data packet carries second indication information that is used to indicate that content in the data packet is control plane signaling or user plane data.
A method comprising: drying an eye-mountable device , wherein the eye-mountable device comprises electronics and a hydrogel material having a water content, and wherein drying the eye-mountable device comprises drying the hydrogel material to remove a portion of the water content; placing the eye-mountable device within a gas-permeable enclosure comprising a porous membrane that allows ethylene oxide gas to permeate through the porous membrane while preventing liquids from permeating through the porous membrane; sterilizing the dried eye-mountable device in the gas-permeable enclosure, wherein sterilizing the dried eye-mountable device comprises exposing the dried eye-mountable device to ethylene oxide gas, characterized in that the method comprises adding a vapor barrier to the gas-permeable enclosure after sterilizing the dried eye-mountable device in the gas-permeable enclosure, in order to prevent water vapor or other gases from entering the enclosure and interacting with the eye-mountable device. drying an eye-mountable device , wherein the eye-mountable device comprises electronics and a hydrogel material having a water content, and wherein drying the eye-mountable device comprises drying the hydrogel material to remove a portion of the water content; placing the eye-mountable device within a gas-permeable enclosure comprising a porous membrane that allows ethylene oxide gas to permeate through the porous membrane while preventing liquids from permeating through the porous membrane; sterilizing the dried eye-mountable device in the gas-permeable enclosure, wherein sterilizing the dried eye-mountable device comprises exposing the dried eye-mountable device to ethylene oxide gas, characterized in that the method comprises adding a vapor barrier to the gas-permeable enclosure after sterilizing the dried eye-mountable device in the gas-permeable enclosure, in order to prevent water vapor or other gases from entering the enclosure and interacting with the eye-mountable device.
A process for providing a cross-linked composition, the process comprising the steps of (a) providing an ethylene-α-olefin plastomer being a copolymer of ethylene and 1-octene, the ethylene-α-olefin plastomer having - a density of from 850 kg/m 3 to 900 kg/m 3 ; and - an melt flow rate (ISO 1133, 2.16kg, 190°C) of 0.3 to 50 g/10min; (b) grafting the ethylene-α-olefin plastomer with silane crosslinker such that the content of silane crosslinker is in the range of 0.1 to 10.0 wt.-% with respect to the grafted ethylene-α-olefin plastomer; (c) contacting said grafted ethylene-α-olefin plastomer with 2 to 8 wt.-% of a tin-free silane crosslinking catalyst with respect to the resulting mixture of grafted ethylene-α-olefin plastomer and tin-free silane crosslinking catalyst, thus forming the cross-linked composition having a gel content of at least 60% when subjected to 23°C and 50% humidity for 15 minutes, and wherein said tin-free catalyst comprises a sulfonic acid wherein step c) takes place: - in an extruder; and/or - at a temperature 120 to 210°C. (a) providing an ethylene-α-olefin plastomer being a copolymer of ethylene and 1-octene, the ethylene-α-olefin plastomer having - a density of from 850 kg/m 3 to 900 kg/m 3 ; and - an melt flow rate (ISO 1133, 2.16kg, 190°C) of 0.3 to 50 g/10min; - a density of from 850 kg/m 3 to 900 kg/m 3 ; and - an melt flow rate (ISO 1133, 2.16kg, 190°C) of 0.3 to 50 g/10min; (b) grafting the ethylene-α-olefin plastomer with silane crosslinker such that the content of silane crosslinker is in the range of 0.1 to 10.0 wt.-% with respect to the grafted ethylene-α-olefin plastomer; (c) contacting said grafted ethylene-α-olefin plastomer with 2 to 8 wt.-% of a tin-free silane crosslinking catalyst with respect to the resulting mixture of grafted ethylene-α-olefin plastomer and tin-free silane crosslinking catalyst, thus forming the cross-linked composition having a gel content of at least 60% when subjected to 23°C and 50% humidity for 15 minutes, and wherein said tin-free catalyst comprises a sulfonic acid - in an extruder; and/or - at a temperature 120 to 210°C.
Intraocular lens supply system (100; 400; 500) for inserting an intraocular lens into an eye, having: - a housing , - a cartridge that is insertable into the housing , for receiving an intraocular lens , - a heating element , characterized in that the heating element has a latent heat store and a nucleation agent , and the intraocular lens supply system (100; 400; 500) has a pressure element (8; 40; 52) that is coupled to the cartridge or the housing and displaceable in such a way that the pressure element (8; 40; 52) exerts a compressive force on the nucleation agent when the cartridge is inserted into the housing such that thermal energy is supplied to the cartridge from the heating element . - a housing , - a cartridge that is insertable into the housing , for receiving an intraocular lens , - a heating element ,
Method of low loss routing for quantum communication, comprising an entangled photon pair source , a router , three or more receivers , and a quantum network connecting each receiver via a quantum channel with the source , and the source is connected with the router via a multi-wavelength quantum channel , whereby the method comprises the steps i) generation of a quantum state in the source and transmission of the quantum state to the router , whereby the quantum state is an entangled photon pair with a signal photon and an idler photon; ii) allocation of the quantum state based on the wavelengths of the signal photon to a first quantum channel and the idler photon to a second quantum channel by the router ; iii) transmission of the quantum state via the quantum channels to the two receivers , preferably a first and a second receiver ; iv) detection of the quantum state at the two receivers in order to establish a quantum communication between the two receivers ; characterized in that the source comprises a modification means , and the modification means set the wavelength of the generated quantum state, preferably of the signal and/or idler photon, in step i) in order to enable a specific allocation of the signal and idler photon in step ii) to two specific quantum channels to two specific receivers , in order to enable a quantum communication between the specific first and second receivers . i) generation of a quantum state in the source and transmission of the quantum state to the router , whereby the quantum state is an entangled photon pair with a signal photon and an idler photon; ii) allocation of the quantum state based on the wavelengths of the signal photon to a first quantum channel and the idler photon to a second quantum channel by the router ; iii) transmission of the quantum state via the quantum channels to the two receivers , preferably a first and a second receiver ; iv) detection of the quantum state at the two receivers in order to establish a quantum communication between the two receivers ; the source comprises a modification means , and the modification means set the wavelength of the generated quantum state, preferably of the signal and/or idler photon, in step i) in order to enable a specific allocation of the signal and idler photon in step ii) to two specific quantum channels to two specific receivers , in order to enable a quantum communication between the specific first and second receivers .
A bolt comprising: a shaft ; and a head , wherein a first thread is provided on a head side of the shaft , and a second thread provided larger in diameter than the first thread for shaving off a deposit on an inner surface of a female screw and a third thread provided wider than both the first thread and the second thread for shaving off the deposit on the inner surface of the female screw is provided on a tip end side of the shaft . a shaft ; and a head , wherein a first thread is provided on a head side of the shaft , and a second thread provided larger in diameter than the first thread for shaving off a deposit on an inner surface of a female screw and a third thread provided wider than both the first thread and the second thread for shaving off the deposit on the inner surface of the female screw is provided on a tip end side of the shaft .