A solid-state imaging device , comprising: a row drive circuit ; a column drive circuit ; and a plurality of pixels, each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip , the photodiode being arranged on a first chip , at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein in the pixel circuit, a plurality of N-type transistors that converts the photocurrent into the voltage signal and outputs the voltage signal is further arranged on the first chip , and a P-type transistor that feeds a constant current to any of the plurality of N-type transistors is further arranged on the second chip . a row drive circuit ; a column drive circuit ; and a plurality of pixels, each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip , the photodiode being arranged on a first chip , at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip , a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip , the photodiode being arranged on a first chip , at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein in the pixel circuit, a plurality of N-type transistors that converts the photocurrent into the voltage signal and outputs the voltage signal is further arranged on the first chip , and a P-type transistor that feeds a constant current to any of the plurality of N-type transistors is further arranged on the second chip . <EOS>