A light emitting diode (LED) array comprising: a first mesa comprising a top surface , at least a first LED including a first p-type layer , a first n-type layer and a first color active region and a first tunnel junction on the first LED, the top surface of the first mesa comprising a second n-type layer on the first tunnel junction ; an adjacent mesa comprising a top surface , the first LED, a second LED including the second n-type layer , a second p-type layer , and a second color active region ; a second tunnel junction on the second LED of the adjacent mesa , and a third n-type layer on the second tunnel junction of the adjacent mesa ; a first trench separating the first mesa and the adjacent mesa ; anode metallization contacts on the second n-type layer of the first mesa and on the top surface of the adjacent mesa ; a third color active region on the third n-type layer of the adjacent mesa and the top surface of the adjacent mesa including a third p-type layer ; a third mesa comprising the first LED, second LED, the second tunnel junction , and the third n-type layer on the second tunnel junction ; a second trench separating the adjacent mesa and the third mesa ; a cathode metallization in the first trench and in electrical contact with the first color active region of the first mesa ; a cathode metallization in the second trench and in electrical contact with the first color active region and the second color active region of the third mesa and the cathode metallization in the first trench in electrical contact with the first color active region , the second color active region and the third color active region of the adjacent mesa ; and an anode metallization contact on the third n-type layer of the third mesa characterized in that the second n-type layer comprises at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. a first mesa comprising a top surface , at least a first LED including a first p-type layer , a first n-type layer and a first color active region and a first tunnel junction on the first LED, the top surface of the first mesa comprising a second n-type layer on the first tunnel junction ; an adjacent mesa comprising a top surface , the first LED, a second LED including the second n-type layer , a second p-type layer , and a second color active region ; a second tunnel junction on the second LED of the adjacent mesa , and a third n-type layer on the second tunnel junction of the adjacent mesa ; a first trench separating the first mesa and the adjacent mesa ; anode metallization contacts on the second n-type layer of the first mesa and on the top surface of the adjacent mesa ; a third color active region on the third n-type layer of the adjacent mesa and the top surface of the adjacent mesa including a third p-type layer ; a third mesa comprising the first LED, second LED, the second tunnel junction , and the third n-type layer on the second tunnel junction ; a second trench separating the adjacent mesa and the third mesa ; a cathode metallization in the first trench and in electrical contact with the first color active region of the first mesa ; a cathode metallization in the second trench and in electrical contact with the first color active region and the second color active region of the third mesa and the cathode metallization in the first trench in electrical contact with the first color active region , the second color active region and the third color active region of the adjacent mesa ; and an anode metallization contact on the third n-type layer of the third mesa <EOS>