A thick film element having a covering Layer with high heat conductivity, comprising: a carrier; a thick film coating deposited on the carrier; and a covering Layer overlaid on the coating, wherein the thick film coating is a heating material, and a mode of heating is electrical heating, characterized in that the carrier, the thick film coating and the covering layer are selected from a material that fulfills every of following equations: λ 1 A T 1 − T 0 d 1 = a × λ 3 A T 3 − T 0 d 3 , , λ 2 A T 2 − T 0 d 2 = b × λ 1 A T 1 − T 0 d 1 , λ 2 A T 2 − T 0 d 2 = c × λ 3 A T 3 − T 0 d 3 ; wherein 200≤a≤10 4 , 10≤b≤1000, 10 4 ≤c≤5×10 5 ; T 2 < T Minimum melting point of the covering layer ; T 2 < T Minimum melting point of the carrier ; T 0 ≤ 30°C; wherein a value of λ 1 A T 1 − T 0 d 1 represents a heat transfer rate of the covering layer; a value of λ 2 A T 2 − T 0 d 2 represents a heat generating rate of the thick film coating; a value of λ 3 A T 3 − T 0 d 3 represents a heat transfer rate of the carrier; λ 1 represents a heat conductivity coefficient of the covering layer at a temperature of T 1 ; λ 2 represents a heat conductivity coefficient of the thick film coating at a temperature of T 2 ; λ 3 represents a heat conductivity coefficient of the carrier at a temperature of T 3 ; A represents a contact area of the thick film coating with the covering layer or the carrier; d 1 represents a thickness of the covering layer; d 2 represents a thickness of the thick film coating; d 3 represents a thickness of the carrier; T 0 represents an initial temperature of the thick film heating element; T 1 represents a surface temperature of the covering layer; T 2 represents a heating temperature of the thick film coating; T 3 represents a surface temperature of the carrier; d 2 ≤ 50μm;10μm≤d 1 ≤ 10 mm, d 3 ≥10μm; T Minimum melting point of the carrier > 25°C; and λ 1 ≥λ 3 , the heat conductivity coefficient λ 3 of the carrier is smaller than or equal to 3W/m.k, the heat conductivity coefficient λ 1 of the covering layer is larger than or equal to 3W/m.k. wherein 200≤a≤10 4 , 10≤b≤1000, 10 4 ≤c≤5×10 5 ; T 2 < T Minimum melting point of the covering layer ; T 2 < T Minimum melting point of the carrier ; T 0 ≤ 30°C; wherein a value of λ 1 A T 1 − T 0 d 1 represents a heat transfer rate of the covering layer; a value of λ 2 A T 2 − T 0 d 2 represents a heat generating rate of the thick film coating; a value of λ 3 A T 3 − T 0 d 3 represents a heat transfer rate of the carrier; λ 1 represents a heat conductivity coefficient of the covering layer at a temperature of T 1 ; λ 2 represents a heat conductivity coefficient of the thick film coating at a temperature of T 2 ; λ 3 represents a heat conductivity coefficient of the carrier at a temperature of T 3 ; A represents a contact area of the thick film coating with the covering layer or the carrier; d 1 represents a thickness of the covering layer; d 2 represents a thickness of the thick film coating; d 3 represents a thickness of the carrier; T 0 represents an initial temperature of the thick film heating element; T 1 represents a surface temperature of the covering layer; T 2 represents a heating temperature of the thick film coating; T 3 represents a surface temperature of the carrier; d 2 ≤ 50μm;10μm≤d 1 ≤ 10 mm, d 3 ≥10μm; T Minimum melting point of the carrier > 25°C; and λ 1 ≥λ 3 , the heat conductivity coefficient λ 3 of the carrier is smaller than or equal to 3W/m.k, the heat conductivity coefficient λ 1 of the covering layer is larger than or equal to 3W/m.k. <EOS>