A thermoelectric device comprising: a first substrate ; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately disposed on the first substrate ; a second substrate disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs ; a plurality of first electrodes disposed between the first substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and respectively having a pair of P-type thermoelectric leg and N-type thermoelectric leg disposed therein; and a plurality of second electrodes disposed between the second substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and respectively having a pair of P-type thermoelectric leg and N-type thermoelectric leg disposed therein, wherein a pair of P-type solder layer and N-type solder layer and a barrier layer disposed between the pair of P-type solder layer and N-type solder layer are disposed on each of the plurality of first electrodes , a pair of P-type solder layer and N-type solder layer and a barrier layer disposed between the pair of P-type solder layer and N-type solder layer are disposed on each of the plurality of second electrodes , each of the P-type thermoelectric legs directly comes into contact with each of the P-type solder layers , and each of the N-type thermoelectric legs directly comes into contact with each of the N-type solder layers , characterized in that a melting point of the barrier layer is greater than a melting point of each of the pair of P-type solder layer and N-type solder layer , that each of the barrier layers has an insulation property, and that an adhesive resin layer is further provided between the first substrate and the plurality of first electrodes . a first substrate ; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately disposed on the first substrate ; a second substrate disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs ; a plurality of first electrodes disposed between the first substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and respectively having a pair of P-type thermoelectric leg and N-type thermoelectric leg disposed therein; and a plurality of second electrodes disposed between the second substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and respectively having a pair of P-type thermoelectric leg and N-type thermoelectric leg disposed therein, wherein a pair of P-type solder layer and N-type solder layer and a barrier layer disposed between the pair of P-type solder layer and N-type solder layer are disposed on each of the plurality of first electrodes , a pair of P-type solder layer and N-type solder layer and a barrier layer disposed between the pair of P-type solder layer and N-type solder layer are disposed on each of the plurality of second electrodes , each of the P-type thermoelectric legs directly comes into contact with each of the P-type solder layers , and each of the N-type thermoelectric legs directly comes into contact with each of the N-type solder layers , characterized in that a melting point of the barrier layer is greater than a melting point of each of the pair of P-type solder layer and N-type solder layer , that each of the barrier layers has an insulation property, and that an adhesive resin layer is further provided between the first substrate and the plurality of first electrodes . <EOS>