mhurhangee/patent-ind-claim-en huggingface dataset:
A method for controlling a controlled device , wherein the method is used for a control device that is capable of establishing a first communication connection with at least one controlled device according to a first communication protocol and establishing a second communication connection with the at least one controlled device according to a second communication protocol, characterized in that the method comprises: sending, by the control device , a parameter for establishing the first communication connection to the at least one controlled device through the second communication connection established with the at least one controlled device in advance, the parameter comprising at least a connection identifier, a key, or a communications band; establishing , by the control device , the first communication connection with the at least one controlled device when a control device enters a control state according to the parameter; acquiring , by the control device , a preset communication index corresponding to the first communication connection and determining, by the control device , relative position information with respect to the at least one controlled device based on the preset communication index; determining , by the control device , one of the at least one controlled device as a target device based on the relative position information and controlling the target device; selecting, by the control device , the second communication protocol with low power consumption to establish the second communication connection, such that the power consumption of using the second communication connection for data transmission is less than that of using the first communication connection for data transmission. sending, by the control device , a parameter for establishing the first communication connection to the at least one controlled device through the second communication connection established with the at least one controlled device in advance, the parameter comprising at least a connection identifier, a key, or a communications band; establishing , by the control device , the first communication connection with the at least one controlled device when a control device enters a control state according to the parameter; acquiring , by the control device , a preset communication index corresponding to the first communication connection and determining, by the control device , relative position information with respect to the at least one controlled device based on the preset communication index; determining , by the control device , one of the at least one controlled device as a target device based on the relative position information and controlling the target device; selecting, by the control device , the second communication protocol with low power consumption to establish the second communication connection, such that the power consumption of using the second communication connection for data transmission is less than that of using the first communication connection for data transmission.
Device for removing a tool from a tool holder , comprising - a receiving element which has a receiving space for receiving at least part of the tool holder , - a tool space connected to the receiving space for receiving at least part of a tool held in the tool holder , and - a clamping element which is designed and arranged such that it releases a tool received in the tool space in a release position and clamps said tool in a clamping position, the receiving element having an effective region which can interact with the clamping element , characterized in that the receiving element and the clamping element are designed and arranged such that, starting from the release position of the clamping element , when the effective region of the receiving element is moved in an actuation direction toward the clamping element , the effective region of the receiving element interacts with the clamping element such that the clamping element reduces a cross section of the tool space transversely to the actuation direction and the clamping element is thus brought into the clamping position. - a receiving element which has a receiving space for receiving at least part of the tool holder , - a tool space connected to the receiving space for receiving at least part of a tool held in the tool holder , and - a clamping element which is designed and arranged such that it releases a tool received in the tool space in a release position and clamps said tool in a clamping position,
A processing method for a laminate, comprising: a cutting step of cutting the laminate obtained by integrally laminating a glass sheet on at least one of both surfaces of a resin sheet, wherein the thickness of the glass sheet alone is smaller than a thickness of the resin sheet; and a finishing step of finishing a cut surface of the laminate that is formed in the cutting step, the finishing step comprising: a first phase of processing a cut surface of the glass sheet by grinding, and leaving at least a part of a cut surface of the resin sheet in an unprocessed state; and a second phase of processing only the cut surface of the resin sheet that is left in the unprocessed state. a cutting step of cutting the laminate obtained by integrally laminating a glass sheet on at least one of both surfaces of a resin sheet, wherein the thickness of the glass sheet alone is smaller than a thickness of the resin sheet; and a finishing step of finishing a cut surface of the laminate that is formed in the cutting step, the finishing step comprising: a first phase of processing a cut surface of the glass sheet by grinding, and leaving at least a part of a cut surface of the resin sheet in an unprocessed state; and a second phase of processing only the cut surface of the resin sheet that is left in the unprocessed state. a first phase of processing a cut surface of the glass sheet by grinding, and leaving at least a part of a cut surface of the resin sheet in an unprocessed state; and a second phase of processing only the cut surface of the resin sheet that is left in the unprocessed state.
Reciprocating compressor with flow control, comprising a lifting gripper , which is arranged on at least one automatic suction valve and can be electromagnetically operated in the working cycle by means of an electromagnetic operating device comprising a magnetic actuator , for keeping the corresponding suction valve open over a defined crank angle range in a periodically controlled manner, the electromagnetic operating device comprising a separate actuating drive which is used to shift the working stroke range of the magnetic actuator used , relative to its engagement with the suction valve , into the optimal working range for an electromagnet used in the magnetic actuator , characterized in that the actuating drive acts on the magnetic actuator together with the lifting gripper operated thereby and adjusts their common position relative to the suction valve as required.
A method for treating a fluid waste, comprising adding one or more process additives to the fluid waste in an amount sufficient to change the wasteform chemistry, said method comprising: one or more of the following addition steps: adding one or more dispersant or a deflocculant to the waste to change the rheology of the fluid; adding one or more additives to decrease the reactive metal components; adding one or more special additives to bind fission products and decrease volatilization of toxic or radioactive elements or species during thermal treatment; and adding one or more additives to target and react with the fine particle size component of the waste to decrease dusting and immobilize components in a durable phase, mixing the fluid waste to form a slurry; wherein the fluid waste comprises a spent fuel pond sludge, a radioactive sludge, or other toxic sludges or slurries. adding one or more dispersant or a deflocculant to the waste to change the rheology of the fluid; adding one or more additives to decrease the reactive metal components; adding one or more special additives to bind fission products and decrease volatilization of toxic or radioactive elements or species during thermal treatment; and adding one or more additives to target and react with the fine particle size component of the waste to decrease dusting and immobilize components in a durable phase, mixing the fluid waste to form a slurry; wherein the fluid waste comprises a spent fuel pond sludge, a radioactive sludge, or other toxic sludges or slurries.
A solar heat collecting device comprising: a heat transfer fluid flow path in which a heat transfer fluid that receives solar heat flows; a frame that supports the heat transfer fluid flow path ; and a cable that causes a current to flow in the heat transfer fluid flow path , characterized in that the frame has a closed loop including a first member made of a ferromagnetic material, the cable is routed to penetrate the closed loop , and a second member made of a non-magnetic material is provided in a middle of the closed loop . a heat transfer fluid flow path in which a heat transfer fluid that receives solar heat flows; a frame that supports the heat transfer fluid flow path ; and a cable that causes a current to flow in the heat transfer fluid flow path , characterized in that the frame has a closed loop including a first member made of a ferromagnetic material, the cable is routed to penetrate the closed loop , and a second member made of a non-magnetic material is provided in a middle of the closed loop .
A motorhome having a vehicle longitudinal axis and a superstructure that is arranged on a vehicle chassis and extends in the vehicle longitudinal axis , wherein the superstructure has at least one space expansion module that is displaceably attached to it transverse to the vehicle longitudinal axis and extends at least approximately along the entire length and height of a longitudinal side of the superstructure , wherein at least four drives for moving the at least one space expansion module transverse to the vehicle longitudinal axis are arranged on the superstructure and/or on a space expansion module and at least one drive is configured as a spindle drive, wherein the at least one space expansion module is displaceably connected to the superstructure via at least four guiding elements each and a guiding element each has a guide rail with at least one slide moveably attached thereto and a holding blade attached to the slide and the slide and the holding blade are connected by interposing an adjusting means.
A conducting shear thinning gel composition, comprising: a bulk mixture of eutectic gallium alloy and gallium oxide, wherein gallium oxide sheets are distributed as interlinked microstructures within the bulk of the gallium alloy, and wherein the bulk mixture of eutectic gallium alloy and gallium oxide has a weight percentage, wt%, of between 59.9% and 99.9% eutectic gallium alloy. a bulk mixture of eutectic gallium alloy and gallium oxide, wherein gallium oxide sheets are distributed as interlinked microstructures within the bulk of the gallium alloy, and wherein the bulk mixture of eutectic gallium alloy and gallium oxide has a weight percentage, wt%, of between 59.9% and 99.9% eutectic gallium alloy.
Closed conveyor belt having a belt part that receives conveyed goods, wherein on both ends of the belt part that receives conveyed goods one support profile for supporting the belt part that receives conveyed goods is in each case attached by means of mechanical connecting elements such as rivets and/or screws and/or hook connectors and/or similar, characterized in that the belt part that receives conveyed goods, on both peripheral regions which are in each case in direct contact with the respective support profile and on which the connection between the belt part that receives conveyed goods and the support profile takes place in each case, contains an additional strip-shaped reinforcement tier from a textile planar formation, and the belt part that receives conveyed goods is otherwise free of further reinforcement tiers.
Ring for a wheel rim of a wheel, particularly for a wheel rim of an alloy wheel for motor vehicles, wherein the wheel rim has an inner rim well and an outer rim well , which in each case merge into an inner rim flange arranged facing a motor vehicle in a mounted state or, respectively, into an outer rim flange , so that the wheel rim has a circumferential contour on the axially inner side, wherein - the ring has a well lip which extends up to the inner rim well or is designed to partially overlap the inner rim well , and wherein - the ring has, facing away from the lip , a flange lip which is adapted to the shape of the radially inner radial surface of the inner rim flange , and wherein - the ring is designed to be at least partially double-walled in a hollow chamber region between the well lip and the flange lip and/or is designed to be radially spaced apart from the wheel rim , characterised in that in the hollow chamber region an inner wall on the radially inner side and an outer wall on the radially outer side extend substantially parallel, and radial walls aligned in the radial direction are arranged between the outer wall and the inner wall , so that a hollow chamber having a substantially rectangular cross-section is formed. - the ring has a well lip which extends up to the inner rim well or is designed to partially overlap the inner rim well , and wherein - the ring has, facing away from the lip , a flange lip which is adapted to the shape of the radially inner radial surface of the inner rim flange , and wherein - the ring is designed to be at least partially double-walled in a hollow chamber region between the well lip and the flange lip and/or is designed to be radially spaced apart from the wheel rim ,
An integrated circuit comprising: a silicon, Si, or insulator substrate ; a pseudo-substrate formed on the substrate and comprising one of: i) germanium, Ge, and/or silicon germanium, SiGe; or ii) at least one III-V material; a first transistor including a channel region , the first transistor channel region formed from a portion of the pseudo-substrate and comprising the pseudo-substrate material; and a second transistor including a channel region , the second transistor channel region formed on the pseudo-substrate and comprising the other of: i) Ge and/or SiGe; or ii) at least one III-V material; wherein the first and second transistors individually have a nanowire configuration or a finned configuration, and wherein the second transistor includes source/drain regions formed from a portion of the pseudo-substrate and comprising the pseudo-substrate material. a silicon, Si, or insulator substrate ; a pseudo-substrate formed on the substrate and comprising one of: i) germanium, Ge, and/or silicon germanium, SiGe; or ii) at least one III-V material; i) germanium, Ge, and/or silicon germanium, SiGe; or ii) at least one III-V material; a first transistor including a channel region , the first transistor channel region formed from a portion of the pseudo-substrate and comprising the pseudo-substrate material; and a second transistor including a channel region , the second transistor channel region formed on the pseudo-substrate and comprising the other of: i) Ge and/or SiGe; or ii) at least one III-V material; i) Ge and/or SiGe; or ii) at least one III-V material; wherein the first and second transistors individually have a nanowire configuration or a finned configuration, and wherein the second transistor includes source/drain regions formed from a portion of the pseudo-substrate and comprising the pseudo-substrate material.
A method of generating an image of a sample exhibiting non-Poissonian emission statistics, the method comprising: • providing a plurality of photon detectors ; • scanning the sample with an excitation beam over a pre-determined time period; • receiving, by said detectors , photons emitted by the sample due to the excitation during said time period; • generating a plurality of intensity images associated with each of said detectors , each of said intensity images being proportional to the mean number of photons detected per unit time; • generating a plurality of correlation images associated with each combination of two of said detectors , each of said correlation images being proportional to the variance of the distribution of detected photons per unit time; characterized in that the method further comprises: • generating the image of said sample using joint sparse recovery from said plurality of intensity and correlation images, wherein said intensity and correlation images have common support. • providing a plurality of photon detectors ; • scanning the sample with an excitation beam over a pre-determined time period; • receiving, by said detectors , photons emitted by the sample due to the excitation during said time period; • generating a plurality of intensity images associated with each of said detectors , each of said intensity images being proportional to the mean number of photons detected per unit time; • generating a plurality of correlation images associated with each combination of two of said detectors , each of said correlation images being proportional to the variance of the distribution of detected photons per unit time; characterized in that the method further comprises: • generating the image of said sample using joint sparse recovery from said plurality of intensity and correlation images, wherein said intensity and correlation images have common support. • generating the image of said sample using joint sparse recovery from said plurality of intensity and correlation images, wherein said intensity and correlation images have common support.
A circularly polarizing plate comprising a base film , a phase difference layer on the base film , and a polarizer on the phase difference layer , wherein the base film comprises an acrylic resin and a styrene-based resin, the base film has an in-plane phase difference value (Rin) of 5 nm or less in Equation 1 below and a thickness direction phase difference value (Rth) of more than 0 nm in Equation 2 below, and the phase difference layer has ultraviolet absorptivity such that transmittance for light having a wavelength of 385 nm is 3% or less and transmittance for light having a wavelength of 390 nm is 2% or more: Rin = d × nx − ny Rth = d × nz − ny wherein, Rin is the in-plane phase difference, Rth is the thickness direction phase difference, nx, ny and nz are the refractive indexes of the base film in the slow axis direction, in the fast axis direction and in the thickness direction, respectively, and d is the thickness of the base film , wherein the phase difference layer has an absolute value of a phase difference change ratio according to Equation A below of 17% or less: Phase difference change ratio = 100 × Ra − Ri / Ri , wherein Ri is the initial in-plane phase difference of the phase difference layer for a wavelength of 550 nm, and Ra is the in-plane phase difference of the phase difference layer for a wavelength of 550 nm after an endurance condition, where the endurance condition is a condition that the phase difference layer is allowed to stand at a temperature of 85°C for 50 hours or more. wherein the base film comprises an acrylic resin and a styrene-based resin, the base film has an in-plane phase difference value (Rin) of 5 nm or less in Equation 1 below and a thickness direction phase difference value (Rth) of more than 0 nm in Equation 2 below, and the phase difference layer has ultraviolet absorptivity such that transmittance for light having a wavelength of 385 nm is 3% or less and transmittance for light having a wavelength of 390 nm is 2% or more: Rin = d × nx − ny Rth = d × nz − ny wherein, Rin is the in-plane phase difference, Rth is the thickness direction phase difference, nx, ny and nz are the refractive indexes of the base film in the slow axis direction, in the fast axis direction and in the thickness direction, respectively, and d is the thickness of the base film , wherein the phase difference layer has an absolute value of a phase difference change ratio according to Equation A below of 17% or less: Phase difference change ratio = 100 × Ra − Ri / Ri , wherein Ri is the initial in-plane phase difference of the phase difference layer for a wavelength of 550 nm, and Ra is the in-plane phase difference of the phase difference layer for a wavelength of 550 nm after an endurance condition, where the endurance condition is a condition that the phase difference layer is allowed to stand at a temperature of 85°C for 50 hours or more.
Method for operating an electronic module comprising at least three semiconductor elements (S1 to S6), wherein, in the event of a defect in one of the semiconductor elements (S1 to S6), a current is passed via the defective semiconductor element (S1 to S6) by selectively activating at least two of the remaining semiconductor elements (S1 to S6) in order to destroy or open-circuit the defective semiconductor element (S1 to S6) or a weak point associated therewith, wherein this current is distributed between the selectively activated semiconductor elements (S1 to S6), wherein said electronic module comprises at least six semiconductor elements (S1 to S6) disposed in three half-bridges (HB1 to HB3), each having an upper branch and a lower branch characterised in that in the event of a defect in one of the semiconductor elements (S1, S3, S5) in the upper branch in one of the half-bridges (HB1 to HB3), the two semiconductor elements (S1, S3, S5) in the upper branch of the other two half-bridges (HB1 to HB3) are selectively activated in order to destroy or open-circuit the defective semiconductor element (S1, S3, S5) or the weak point associated therewith, wherein, if one of the semiconductor elements (S2, S4, S6) in the lower branch in one of the half-bridges (HB1 to HB3) is defective, the two semiconductor elements (S2, S4, S6) in the lower branch of the other two half-bridges (HB1 to HB3) are selectively activated in order to destroy or open-circuit the defective semiconductor element (S2, S4, S6) or the weak point associated therewith. in the event of a defect in one of the semiconductor elements (S1, S3, S5) in the upper branch in one of the half-bridges (HB1 to HB3), the two semiconductor elements (S1, S3, S5) in the upper branch of the other two half-bridges (HB1 to HB3) are selectively activated in order to destroy or open-circuit the defective semiconductor element (S1, S3, S5) or the weak point associated therewith, wherein, if one of the semiconductor elements (S2, S4, S6) in the lower branch in one of the half-bridges (HB1 to HB3) is defective, the two semiconductor elements (S2, S4, S6) in the lower branch of the other two half-bridges (HB1 to HB3) are selectively activated in order to destroy or open-circuit the defective semiconductor element (S2, S4, S6) or the weak point associated therewith.
Method for producing spunbonded fabric using a woven-fabric belt , comprising the application of spunbonded threads onto the web-material contacting side of the woven-fabric belt , moving in a belt-movement direction, in at least one, preferably in a plurality of, spunbonded-thread application regions which are sequential in the belt-movement direction, characterized in that the woven-fabric belt comprises a plurality of longitudinal threads , running substantially in a longitudinal belt direction (L), and a plurality of transverse threads , running substantially in a transverse belt direction (Q), wherein the longitudinal threads bind with the transverse threads at binder points , and crown regions of the longitudinal threads are formed on a web-material contacting side , wherein on the web-material contacting side a multiplicity of deposits are provided at least on the longitudinal threads , wherein deposits (22 1 ) which do not extend into the crown regions are provided, and/or wherein deposits (22 3 ) which do extend into crown regions in the longitudinal belt direction (L) are asymmetrical in relation to a respective crown region .