An electroluminescent display device comprising: a substrate including a first subpixel (P1), a second subpixel (P2) and a third subpixel (P3); a circuit element layer provided on the substrate and including a plurality of driving thin film transistors (T1), each of the first to third subpixels (P1, P2, P3) including one of the driving thin film transistors (T1); a plurality of reflective layers provided above the circuit element layer , and including a first reflective layer provided in the first subpixel (P1), a second reflective layer provided in the second subpixel (P2) and a third reflective layer provided in the third subpixel (P3); a plurality of first electrodes provided above the reflective layers , each of the first to third subpixels (P1, P2, P3) including one of the first electrodes , the first electrode of each subpixel (P1, P2, P3) being electrically connected to the driving thin film transistor (T1) of the respective subpixel (P1, P2, P3) by a respective contact electrode ; a light emitting layer provided on the first electrodes ; and a second electrode provided on the light emitting layer , wherein in the first subpixel (P1), the first reflective layer is electrically insulated from the first electrode of the first subpixel (P1) and from the first contact electrode of the first subpixel (P1); characterized in that : the electroluminescent display device comprising: a first conductive layer provided below the second reflective layer in the second subpixel (P2), wherein the first conductive layer is on the same layer as the first reflective layer and is electrically insulated from the first electrode of the second subpixel (P2); and/or a second conductive layer provided below the third reflective layer in the third subpixel (P3), wherein the second conductive layer is on the same layer as the first reflective layer and is electrically insulated from the first electrode of the third subpixel (P3). a substrate including a first subpixel (P1), a second subpixel (P2) and a third subpixel (P3); a circuit element layer provided on the substrate and including a plurality of driving thin film transistors (T1), each of the first to third subpixels (P1, P2, P3) including one of the driving thin film transistors (T1); a plurality of reflective layers provided above the circuit element layer , and including a first reflective layer provided in the first subpixel (P1), a second reflective layer provided in the second subpixel (P2) and a third reflective layer provided in the third subpixel (P3); a plurality of first electrodes provided above the reflective layers , each of the first to third subpixels (P1, P2, P3) including one of the first electrodes , the first electrode of each subpixel (P1, P2, P3) being electrically connected to the driving thin film transistor (T1) of the respective subpixel (P1, P2, P3) by a respective contact electrode ; a light emitting layer provided on the first electrodes ; and a second electrode provided on the light emitting layer , wherein in the first subpixel (P1), the first reflective layer is electrically insulated from the first electrode of the first subpixel (P1) and from the first contact electrode of the first subpixel (P1); a first conductive layer provided below the second reflective layer in the second subpixel (P2), wherein the first conductive layer is on the same layer as the first reflective layer and is electrically insulated from the first electrode of the second subpixel (P2); and/or a second conductive layer provided below the third reflective layer in the third subpixel (P3), wherein the second conductive layer is on the same layer as the first reflective layer and is electrically insulated from the first electrode of the third subpixel (P3). <EOS>