mhurhangee/patent-ind-claim-en huggingface dataset:
A semiconductor laser comprising: a chip used as a gain medium of the semiconductor laser; and a platform, wherein: the chip is made of a semiconductor material; the semiconductor material has a direct bandgap; the chip comprises a first edge (139-1) defining an outer portion of a side of the chip ; the chip comprises a second edge (139-2) defining an outer portion of another side of the chip ; and the first edge (139-1) is opposite the second edge (139-2), and wherein: the platform comprises silicon; the platform comprises a waveguide ; and the chip is bonded to the platform, wherein the semiconductor laser is characterized by a wall in the chip , wherein the wall is between the first edge (139-1) and the second edge (139-2); a coating disposed on the wall , wherein the coating forms a mirror in the chip ; and a ridge formed in the chip , wherein: the ridge is configured to guide light in the chip ; the ridge comprises a first end and a second end; the first end is opposite the second end; the first end terminates at the mirror ; and the second end is optically coupled with the waveguide . a chip used as a gain medium of the semiconductor laser; and a platform, wherein: the chip is made of a semiconductor material; the semiconductor material has a direct bandgap; the chip comprises a first edge (139-1) defining an outer portion of a side of the chip ; the chip comprises a second edge (139-2) defining an outer portion of another side of the chip ; and the first edge (139-1) is opposite the second edge (139-2), and the chip is made of a semiconductor material; the semiconductor material has a direct bandgap; the chip comprises a first edge (139-1) defining an outer portion of a side of the chip ; the chip comprises a second edge (139-2) defining an outer portion of another side of the chip ; and the first edge (139-1) is opposite the second edge (139-2), and wherein: the platform comprises silicon; the platform comprises a waveguide ; and the chip is bonded to the platform, the platform comprises silicon; the platform comprises a waveguide ; and the chip is bonded to the platform, wherein the semiconductor laser is characterized by a wall in the chip , wherein the wall is between the first edge (139-1) and the second edge (139-2); a coating disposed on the wall , wherein the coating forms a mirror in the chip ; and a ridge formed in the chip , wherein: the ridge is configured to guide light in the chip ; the ridge comprises a first end and a second end; the first end is opposite the second end; the first end terminates at the mirror ; and the second end is optically coupled with the waveguide . the ridge is configured to guide light in the chip ; the ridge comprises a first end and a second end; the first end is opposite the second end; the first end terminates at the mirror ; and the second end is optically coupled with the waveguide .
A policy control method, comprising: obtaining (S610), by a policy and charging rule function, PCRF, entity, a message comprising description information of two or more sub-flows belonging to a same application and being formed via different interfaces of a user equipment, UE, wherein the message is transmitted by an application function, AF, entity, and wherein the description information of the two or more sub-flows comprises: an Internet protocol IP address associated with each sub-flow of the two or more sub-flows, and access type information and/or quality of service, QoS, requirement information of each sub-flow of the two or more sub-flows; obtaining, by the PCRF entity, an association between the two or more sub-flows of the same application from the message; generating (S360, S470, S620), by the PCRF entity, a policy and charging control, PCC, rule corresponding to each sub-flow of the two or more sub-flows according to the description information of each sub-flow of the two or more sub-flows and the association between the two or more sub-flows of the same application; and transmitting (S370, S480, S630), by the PCRF entity, at least one generated PCC rule to a policy and charging enforcement function, PCEF, entity or a bearing binding and event report function, BBERF, entity, so as to perform (S380, S490) policy control for the sub-flows by the PCEF entity or the BBERF entity. obtaining (S610), by a policy and charging rule function, PCRF, entity, a message comprising description information of two or more sub-flows belonging to a same application and being formed via different interfaces of a user equipment, UE, wherein the message is transmitted by an application function, AF, entity, and wherein the description information of the two or more sub-flows comprises: an Internet protocol IP address associated with each sub-flow of the two or more sub-flows, and access type information and/or quality of service, QoS, requirement information of each sub-flow of the two or more sub-flows; obtaining, by the PCRF entity, an association between the two or more sub-flows of the same application from the message; generating (S360, S470, S620), by the PCRF entity, a policy and charging control, PCC, rule corresponding to each sub-flow of the two or more sub-flows according to the description information of each sub-flow of the two or more sub-flows and the association between the two or more sub-flows of the same application; and transmitting (S370, S480, S630), by the PCRF entity, at least one generated PCC rule to a policy and charging enforcement function, PCEF, entity or a bearing binding and event report function, BBERF, entity, so as to perform (S380, S490) policy control for the sub-flows by the PCEF entity or the BBERF entity.
A perturbation and observation, P&O, maximum power point tracking, MPPT, method, performing the following steps: (S100) measuring a current voltage (Vc(k)) and a current power (P(k)) at a current time point (k), (S200) temporarily determining a next voltage command (Vr(k+1)) using voltage and power measured at the current time point (k) and a previous time point (k-1); characterized in that : (S300) identifying, by means of a voltage command counter, a number of times that the voltage command (Vr), including the next voltage command (Vr(k+1)), has been continuously increased or continuously decreased ; (S400) deciding to decrease the next voltage command (Vr(k+1)) temporarily determined to be increased or to increase the next voltage command (Vr(k+1)) temporarily determined to be decreased, when the voltage command counter is greater than a number of predetermined reference times, and regulating an output voltage of a solar cell based on the decided next voltage command (Vr(k+1)). (S100) measuring a current voltage (Vc(k)) and a current power (P(k)) at a current time point (k), (S200) temporarily determining a next voltage command (Vr(k+1)) using voltage and power measured at the current time point (k) and a previous time point (k-1); characterized in that : (S300) identifying, by means of a voltage command counter, a number of times that the voltage command (Vr), including the next voltage command (Vr(k+1)), has been continuously increased or continuously decreased ; (S400) deciding to decrease the next voltage command (Vr(k+1)) temporarily determined to be increased or to increase the next voltage command (Vr(k+1)) temporarily determined to be decreased, when the voltage command counter is greater than a number of predetermined reference times, and regulating an output voltage of a solar cell based on the decided next voltage command (Vr(k+1)). (S300) identifying, by means of a voltage command counter, a number of times that the voltage command (Vr), including the next voltage command (Vr(k+1)), has been continuously increased or continuously decreased ; (S400) deciding to decrease the next voltage command (Vr(k+1)) temporarily determined to be increased or to increase the next voltage command (Vr(k+1)) temporarily determined to be decreased, when the voltage command counter is greater than a number of predetermined reference times, and regulating an output voltage of a solar cell based on the decided next voltage command (Vr(k+1)).
A surgical instrument with an elongated shaft tube , which is adjoined by a main body , and with a connection body , wherein the connection body is coupled to a proximal end region of the main body and wherein at least one working channel tube is arranged in an interior of the shaft tube , which working channel tube extends in a longitudinal direction (L) of the shaft tube , wherein a proximal end region of the working channel tube is accommodated inside the connection body and is sealed with respect thereto, characterized in that the working channel tube is connected to the main body by means of a shaft-shaped seal shoulder and the shaft-shaped seal shoulder comprises a jacket section and a connecting section , wherein the connecting section has a greater material thickness in a radial direction (R) than the jacket section , and the jacket section is connected to the working channel tube by means of at least one linear through-weld connection that extends at least approximately in the longitudinal direction (L).
A forming system for deforming a layered charge of material from an initial conformation to a final conformation to define a desired surface contour of the layered charge , the system comprising: a forming die having a forming surface that is shaped to at least partially define the desired surface contour of the layered charge ; a fluidly actuated support having a support surface that is adjacent to the forming surface and located to at least temporarily support a portion of the layered charge ; a vacuum bag that at least partially defines an enclosed volume that contains the forming surface and the support surface ; and a vacuum source that is configured to selectively apply a vacuum to the enclosed volume ; wherein the fluidly actuated support includes and/or is a foam body configured to transition among an extended conformation , an intermediate conformation and/or a retracted conformation responsive to a fluid flow and/or responsive to a pressure differential. a forming die having a forming surface that is shaped to at least partially define the desired surface contour of the layered charge ; a fluidly actuated support having a support surface that is adjacent to the forming surface and located to at least temporarily support a portion of the layered charge ; a vacuum bag that at least partially defines an enclosed volume that contains the forming surface and the support surface ; and a vacuum source that is configured to selectively apply a vacuum to the enclosed volume ; wherein the fluidly actuated support includes and/or is a foam body configured to transition among an extended conformation , an intermediate conformation and/or a retracted conformation responsive to a fluid flow and/or responsive to a pressure differential.
A system for semiconductor processing, the system comprising: an optoelectronic hybrid module comprising a first complementary metal-oxide semiconductor, CMOS, SOI die with a first silicon layer thickness and comprising one or more photonic devices , and a second CMOS SOI die with a second silicon layer thickness different than the first layer thickness and comprising one or more electronic devices wherein said first and second CMOS SOI die are bonded together by metal cap layers , and said one or more electronic and said one or more photonic devices are fabricated on SOI wafers, said SOI wafers being diced to form said first and second CMOS SOI die. an optoelectronic hybrid module comprising a first complementary metal-oxide semiconductor, CMOS, SOI die with a first silicon layer thickness and comprising one or more photonic devices , and a second CMOS SOI die with a second silicon layer thickness different than the first layer thickness and comprising one or more electronic devices wherein said first and second CMOS SOI die are bonded together by metal cap layers , and said one or more electronic and said one or more photonic devices are fabricated on SOI wafers, said SOI wafers being diced to form said first and second CMOS SOI die.
Catalyst comprising a platinum group metal M, at least one promoter X1 selected from the group consisting of tin, germanium and lead, a halogenated compound and a porous support, in which the X1/M atomic ratio is between 0.3 and 8, the H ir /M ratio measured by irreversible hydrogen chemisorption is greater than 0.40 and the bimetallicity index BMI measured by hydrogen/oxygen titration is greater than 108, said catalyst containing 0.1% to 15% by weight of halogenated compound and being prepared according to the following steps: a) introduction of the promoter X1 into the support or onto the support, c) calcination of the product obtained in step a at a temperature preferably between 350°C and 650°C, d) deposition of at least one platinum group metal M, e) optional drying under an atmosphere that is neutral or contains oxygen, at a moderate temperature that preferably does not exceed 150°C, f) deposition of a complementary fraction of the promoter X1 on the product obtained in step d or e, said complementary fraction of said promoter X1 being deposited by contacting of a tin tetrachloride or germanium tetrachloride solution, h) calcination of the product obtained in step f), this calcination is preferably carried out in the presence of air and this air may also be enriched in oxygen or in nitrogen, and in the case where the precursors of the promoter X1 or of the metal M that are used in the preparation of the catalyst do not contain halogen or contain an insufficient amount of halogen, addition of a halogenated compound during the preparation or, when the halogen is chlorine, an oxychlorination treatment or impregnation with an aqueous hydrochloric acid solution. a) introduction of the promoter X1 into the support or onto the support, c) calcination of the product obtained in step a at a temperature preferably between 350°C and 650°C, d) deposition of at least one platinum group metal M, e) optional drying under an atmosphere that is neutral or contains oxygen, at a moderate temperature that preferably does not exceed 150°C, f) deposition of a complementary fraction of the promoter X1 on the product obtained in step d or e, said complementary fraction of said promoter X1 being deposited by contacting of a tin tetrachloride or germanium tetrachloride solution, h) calcination of the product obtained in step f), this calcination is preferably carried out in the presence of air and this air may also be enriched in oxygen or in nitrogen, and in the case where the precursors of the promoter X1 or of the metal M that are used in the preparation of the catalyst do not contain halogen or contain an insufficient amount of halogen, addition of a halogenated compound during the preparation or, when the halogen is chlorine, an oxychlorination treatment or impregnation with an aqueous hydrochloric acid solution.
Method for marking a coated textile , wherein the marking is produced by applying an ink that absorbs and/or reflects at least one wavelength in the visible range when it is applied to said textile (1, 5,) at a temperature within a predetermined range of use, said ink neither absorbing nor reflecting a wavelength in the visible range if said textile is subjected, at least at the level of said marking , at a temperature greater than or equal to a disappearance temperature , the method being characterized in that said ink absorbing and/or reflecting again at least one wavelength in the visible range if the textile is subsequently subj ected, at least at the level of marking , at a temperature below a reappearance temperature , said reappearance temperature being below the minimum temperature of the predetermined range of use.
A foam stabilizing composition, comprising: (A) a siloxane cationic surfactant having general formula (I): [Z 1 -D 1 -N(Y) a (R) 2-a ] +y [X -x ] n (I), wherein Z 1 is a siloxane moiety; D 1 is a divalent linking group; R is H or an unsubstituted hydrocarbyl group having from 1 to 4 carbon atoms; each Y has formula -D-NR 1 3 + , where D is a divalent linking group and each R 1 is independently an unsubstituted hydrocarbyl group having from 1 to 4 carbon atoms; subscript a is 1 or 2; 1≤y≤3; X is an anion; subscript n is 1, 2, or 3; and 1≤x≤3, with the proviso that (x*n)=y; and (B) an organic cationic surfactant having general formula (II): [Z 2 -D 2 -N(Y) b (R) 2-b ] +y [X -x ] n (II), wherein Z 2 is an unsubstituted hydrocarbyl group; D 2 is a covalent bond or a divalent linking group; subscript b is 1 or 2; and each R, Y, superscript y, X, subscript n, and superscript x is independently selected and as defined above. (A) a siloxane cationic surfactant having general formula (I): [Z 1 -D 1 -N(Y) a (R) 2-a ] +y [X -x ] n (I), wherein Z 1 is a siloxane moiety; D 1 is a divalent linking group; R is H or an unsubstituted hydrocarbyl group having from 1 to 4 carbon atoms; each Y has formula -D-NR 1 3 + , where D is a divalent linking group and each R 1 is independently an unsubstituted hydrocarbyl group having from 1 to 4 carbon atoms; subscript a is 1 or 2; 1≤y≤3; X is an anion; subscript n is 1, 2, or 3; and 1≤x≤3, with the proviso that (x*n)=y; and (B) an organic cationic surfactant having general formula (II): [Z 2 -D 2 -N(Y) b (R) 2-b ] +y [X -x ] n (II), wherein Z 2 is an unsubstituted hydrocarbyl group; D 2 is a covalent bond or a divalent linking group; subscript b is 1 or 2; and each R, Y, superscript y, X, subscript n, and superscript x is independently selected and as defined above.
Freely ejecting starting device comprising a drive shaft and a hollow shaft which is at least movable on the drive shaft and which comprises a front opening , wherein a pinion is arranged axially movable on the hollow shaft ; and wherein a ring engages over a projection arranged on the hollow shaft from the side of the pinion , characterised in that , a closure closes the front opening ; and in that the closure engages over the projection from the front opening of the hollow shaft ; wherein the ring comprises an engagement contour that includes at least a portion of an engagement contour of the closure .
Single-lip drill, comprising a drill head , wherein the drill head has a rotational axis , a drilling diameter (D) as well as a cutting edge , wherein a cutting face is assigned to the cutting edge , wherein two longitudinal grooves (33.1, 33.2) extending parallel to one another, namely an inner (33.1) and an outer (33.2) longitudinal groove, are present in the cutting face and a land is present between the inner longitudinal groove (33.1) and the outer longitudinal groove (33.2), characterized in that the land ends in the tip of the cutting edge.
A method for triggering, by a network node , a transfer of at least one presence information message between the network node and a client terminal , wherein the network node , the client terminal and a network element maintaining network status information and managing traffic are configured to communicate with each other over a communication network , the method comprising: - receiving information, in the network node , on a communication environment, the information on the communication environment represents a status of the communication network ; - analyzing the received information at least by comparing information on the communication environment representing the status of the communication network at least partially with at least one predetermined value; - determining as a result of the analyzing step, that a condition of the communication environment is suitable for the transfer of the presence information message when the comparison of the received network condition information is satisfied in the analyzing step in view of the at least one predetermined value; and - upon a determination, in the determining step, that the communication environment is suitable for the transfer of the at least one presence information message, characterized in that further in the method requesting, by the network node , a permission from the network element managing traffic in the communication network to trigger the transfer of the presence information message, and in response to a receipt of a permission triggering the transfer of the at least one presence information message to the client terminal in response to the determination that the condition of the communication environment is suitable for the transfer of the at least one presence information message. - receiving information, in the network node , on a communication environment, the information on the communication environment represents a status of the communication network ; - analyzing the received information at least by comparing information on the communication environment representing the status of the communication network at least partially with at least one predetermined value; - determining as a result of the analyzing step, that a condition of the communication environment is suitable for the transfer of the presence information message when the comparison of the received network condition information is satisfied in the analyzing step in view of the at least one predetermined value; and - upon a determination, in the determining step, that the communication environment is suitable for the transfer of the at least one presence information message,
Construction element of brick, breeze block or stone block type, having, in cross-section, a generally rectangular quadrilateral form and comprising two transverse lateral faces (2, 3a-3c) and two longitudinal lateral faces (4a-4c, 5a-5c), the construction element forming a wall-tying element which comprises at least one through orifice intended to receive a vertical wall tie of metal reinforcement type, the four lateral faces (2, 3a-3c, 4a, 4b, 4ba, 4bb, 4c, 5a-5c) of the wall-tying element each extending in a plane parallel to the axis (X) of the through orifice , the construction element having a first clearance formed in a wall of the element on one of its longitudinal lateral faces (4b, 4ba, 4bb-4c), characterized in that said first clearance extends to an edge of said construction element.