A method of forming a semiconductor structure comprising: forming a first hard mask layer that touches and lies over an isolation layer, the isolation layer having a top surface, and touching and lying over a source structure and a drain structure; forming a second hard mask layer that touches and lies over the first hard mask layer, the second hard mask layer having a top surface and a bottom surface; forming a third hard mask layer that touches and lies over the second hard mask layer, the third hard mask layer having a top surface; forming a fourth hard mask layer that touches and lies over the third hard mask layer, the fourth hard mask layer having a top surface; forming a first patterned photoresist layer that touches and lies over the fourth hard mask layer; forming a second patterned photoresist layer that touches and lies over the fourth hard mask layer, the first patterned photoresist layer and the second patterned photoresist layer exposing a number of uncovered regions on the top surface of the fourth hard mask layer, the number of uncovered regions on the top surface of the fourth hard mask layer being etched to form a number of trenches and each trench exposing the top surface of the third hard mask layer, and further comprising selectively etching the third hard mask layer, the second hard mask layer, and the first hard mask layer to form a number of mask openings, each mask opening exposing an uncovered region on the top surface of the isolation layer; and etching each uncovered region on the top surface of the isolation layer to form a number of metal contact openings, a first metal contact opening exposing the source structure, a second metal contact opening exposing the drain structure; wherein the third and fourth hard mask layers are completely removed while the first hard mask layer is etched. forming a first hard mask layer that touches and lies over an isolation layer, the isolation layer having a top surface, and touching and lying over a source structure and a drain structure; forming a second hard mask layer that touches and lies over the first hard mask layer, the second hard mask layer having a top surface and a bottom surface; forming a third hard mask layer that touches and lies over the second hard mask layer, the third hard mask layer having a top surface; forming a fourth hard mask layer that touches and lies over the third hard mask layer, the fourth hard mask layer having a top surface; forming a first patterned photoresist layer that touches and lies over the fourth hard mask layer; forming a second patterned photoresist layer that touches and lies over the fourth hard mask layer, the first patterned photoresist layer and the second patterned photoresist layer exposing a number of uncovered regions on the top surface of the fourth hard mask layer, the number of uncovered regions on the top surface of the fourth hard mask layer being etched to form a number of trenches and each trench exposing the top surface of the third hard mask layer, and further comprising selectively etching the third hard mask layer, the second hard mask layer, and the first hard mask layer to form a number of mask openings, each mask opening exposing an uncovered region on the top surface of the isolation layer; and etching each uncovered region on the top surface of the isolation layer to form a number of metal contact openings, a first metal contact opening exposing the source structure, a second metal contact opening exposing the drain structure; wherein the third and fourth hard mask layers are completely removed while the first hard mask layer is etched. <EOS>