A semiconductor device (SEM) comprising: a plurality of semiconductor chips (CHIP1; CHIP2) comprising a plurality of terminals (TMF; TMS); and a connecting portion (BP) configured to connect a terminal (TMF) of the plurality of terminals formed on one semiconductor chip (CHIP1), with a terminal (TMS) of the plurality of terminals formed on another semiconductor chip (CHIP2), wherein the plurality of terminals (TMF; TMS) of the plurality of semiconductor chips belong to one of a first redundant group (A) or a second redundant group (B); wherein the terminals (TMF; TMS) of a given semiconductor chip (CHIP1; CHIP2) are arranged on the semiconductor chip in a lattice form with each of first redundant terminals belonging to the first redundant group (A) and each of second redundant terminals belonging to the second redundant group (B) being alternately arranged such that there is a predetermined interval (β) between adjacent first and second redundant terminals; wherein the first redundant terminals (A) are arranged on the semiconductor chip such that an interval between one said first redundant terminal and an adjacent first redundant terminal is larger than the predetermined interval (β); each of the plurality of semiconductor chips including a selecting portion (RDD1; RDD2) configured to select a signal transmitting terminal from among the plurality of terminals (TMF, TMS), per each of the redundant groups (A, B), and wherein an interval between a centre of each terminal of the terminals (TMF; TMS) and a centre of another terminal which is adjacent to the each terminal and included in the terminals (TMF; TMS) is equal to the predetermined interval (β). a plurality of semiconductor chips (CHIP1; CHIP2) comprising a plurality of terminals (TMF; TMS); and a connecting portion (BP) configured to connect a terminal (TMF) of the plurality of terminals formed on one semiconductor chip (CHIP1), with a terminal (TMS) of the plurality of terminals formed on another semiconductor chip (CHIP2), wherein the plurality of terminals (TMF; TMS) of the plurality of semiconductor chips belong to one of a first redundant group (A) or a second redundant group (B); wherein the terminals (TMF; TMS) of a given semiconductor chip (CHIP1; CHIP2) are arranged on the semiconductor chip in a lattice form with each of first redundant terminals belonging to the first redundant group (A) and each of second redundant terminals belonging to the second redundant group (B) being alternately arranged such that there is a predetermined interval (β) between adjacent first and second redundant terminals; wherein the first redundant terminals (A) are arranged on the semiconductor chip such that an interval between one said first redundant terminal and an adjacent first redundant terminal is larger than the predetermined interval (β); each of the plurality of semiconductor chips including a selecting portion (RDD1; RDD2) configured to select a signal transmitting terminal from among the plurality of terminals (TMF, TMS), per each of the redundant groups (A, B), and wherein an interval between a centre of each terminal of the terminals (TMF; TMS) and a centre of another terminal which is adjacent to the each terminal and included in the terminals (TMF; TMS) is equal to the predetermined interval (β). <EOS>