A spin-transfer torque magnetic random access memory device, comprising a magnetic tunnel junction (330; 430) comprising a free magnetic layer (336; 436) in a first plane and a reference magnetic layer (332; 432) in a second plane, the free magnetic layer and the reference magnetic layer separated by a non-magnetic tunneling barrier layer (334; 434) in a third plane, the free magnetic layer having a magnetization vector that is perpendicular to the first plane and having a magnetization direction that is configured to process from a first magnetization direction to a second magnetization direction opposite to the first magnetization direction; a non-magnetic spacer layer (340; 440) in a fourth plane coupled to the free magnetic layer; a precessional spin current magnetic layer (350; 450) in a fifth plane magnetically and electronically coupled through the non-magnetic spacer layer to the free magnetic layer, the precessional spin current magnetic layer separated from the free magnetic layer by the non-magnetic spacer layer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component in the fifth plane which is configured to freely rotate in any magnetic direction in the fifth plane, and a magnetization component perpendicular to the fifth plane wherein the precessional spin current magnetic layer (350; 450) has a rotation frequency greater than zero, wherein the magnetic device is further configured whereby, upon application of current to the device, the magnetization direction of the precessional spin current magnetic layer (350; 450) follows precession of the magnetization direction of the free magnetic layer (336; 436), thereby causing spin transfer torque to assist switching of the magnetization vector of the free magnetic layer. a magnetic tunnel junction (330; 430) comprising a free magnetic layer (336; 436) in a first plane and a reference magnetic layer (332; 432) in a second plane, the free magnetic layer and the reference magnetic layer separated by a non-magnetic tunneling barrier layer (334; 434) in a third plane, the free magnetic layer having a magnetization vector that is perpendicular to the first plane and having a magnetization direction that is configured to process from a first magnetization direction to a second magnetization direction opposite to the first magnetization direction; a non-magnetic spacer layer (340; 440) in a fourth plane coupled to the free magnetic layer; a precessional spin current magnetic layer (350; 450) in a fifth plane magnetically and electronically coupled through the non-magnetic spacer layer to the free magnetic layer, the precessional spin current magnetic layer separated from the free magnetic layer by the non-magnetic spacer layer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component in the fifth plane which is configured to freely rotate in any magnetic direction in the fifth plane, and a magnetization component perpendicular to the fifth plane wherein the precessional spin current magnetic layer (350; 450) has a rotation frequency greater than zero, wherein the magnetic device is further configured whereby, upon application of current to the device, the magnetization direction of the precessional spin current magnetic layer (350; 450) follows precession of the magnetization direction of the free magnetic layer (336; 436), thereby causing spin transfer torque to assist switching of the magnetization vector of the free magnetic layer. <EOS>