A solid state imaging device comprising: a silicon substrate and a plurality of pixels (P), wherein each pixel comprises: a first charge accumulation region and a second charge accumulation region formed in the silicon substrate; a MOS gate configured to transfer accumulated charges from the first charge accumulation region into the second charge accumulation region; and a set comprising an upper and a lower electrode and a contact between the two electrodes, the set being formed on the upper surface of the first charge accumulation region and the two electrodes being formed of metal materials; wherein the solid state imaging device further comprises: an insulating film disposed on the silicon substrate at the light-incident side around the pixels to isolate the pixels from each other; a photoelectric conversion film disposed on the insulating film at the light-incident side, wherein the photoelectric conversion film is configured to generate signal charges by converting incident light, and wherein both the photoelectric conversion film and the upper and lower electrodes are configured to block light from entering the first and second charge accumulation regions; and a transparent electrode disposed on the photoelectric conversion film at the light-incident side; wherein, for each pixel, the set of electrodes and contact makes an electric connection between the photoelectric conversion film and the first charge accumulation region . a first charge accumulation region and a second charge accumulation region formed in the silicon substrate; a MOS gate configured to transfer accumulated charges from the first charge accumulation region into the second charge accumulation region; and a set comprising an upper and a lower electrode and a contact between the two electrodes, the set being formed on the upper surface of the first charge accumulation region and the two electrodes being formed of metal materials; wherein the solid state imaging device further comprises: an insulating film disposed on the silicon substrate at the light-incident side around the pixels to isolate the pixels from each other; a photoelectric conversion film disposed on the insulating film at the light-incident side, wherein the photoelectric conversion film is configured to generate signal charges by converting incident light, and wherein both the photoelectric conversion film and the upper and lower electrodes are configured to block light from entering the first and second charge accumulation regions; and a transparent electrode disposed on the photoelectric conversion film at the light-incident side; wherein, for each pixel, the set of electrodes and contact makes an electric connection between the photoelectric conversion film and the first charge accumulation region . an insulating film disposed on the silicon substrate at the light-incident side around the pixels to isolate the pixels from each other; a photoelectric conversion film disposed on the insulating film at the light-incident side, wherein the photoelectric conversion film is configured to generate signal charges by converting incident light, and wherein both the photoelectric conversion film and the upper and lower electrodes are configured to block light from entering the first and second charge accumulation regions; and a transparent electrode disposed on the photoelectric conversion film at the light-incident side; wherein, for each pixel, the set of electrodes and contact makes an electric connection between the photoelectric conversion film and the first charge accumulation region . <EOS>