A Vertical Cavity Surface Emitting Laser device comprising a substrate , a first electrical contact , a second electrical contact and an optical resonator, wherein the optical resonator comprises a first distributed Bragg reflector , a second distributed Bragg reflector and an active layer for light emission, wherein the active layer is arranged between the first distributed Bragg reflector and the second distributed Bragg reflector and the first distributed Bragg reflector is arranged between the substrate and the active layer , wherein either the first distributed Bragg reflector or the second distributed Bragg reflector comprises a first part (115-1, 125-1) with at least one pair of layers with different refractive indices and a second part (115-2, 125-2) with at least one pair of layers with different refractive indices, wherein the first part (115-1, 125-1) and the second part (115-2, 125-2) comprise different conductivity types, wherein a tunnel junction is arranged between the first part (115-1, 125-1) and the second part (115-2, 125-2), and wherein the first electrical contact and the second electrical contact are arranged to electrically pump the optical resonator such that the tunnel junction is reversely biased during operation of the Vertical Cavity Surface Emitting Laser device wherein one of the following alternatives holds: a) the first distributed Bragg reflector comprises the first part (115-1) and the second part (115-2), the first part (115-1) being arranged on a side of the tunnel junction facing the active layer and the second part (115-2) being arranged on a side of the tunnel junction which is turned away from the active layer , wherein the relative thickness of the second part (115-2) with respect to the total thickness of the first part and the second part (115-1, 115-2) of the first distributed Bragg reflector is between 0.2 -0.6; b) the second distributed Bragg reflector comprises the first part (125-1) and the second part (125-2), the second part (125-2) being arranged on a side of the tunnel junction facing away from the active layer and the first part (125-1) being arranged on a side of the tunnel junction facing the active layer , wherein the relative thickness of the second part (125-2) with respect to the total thickness of the first part and the second part (125-1, 125-2) of the second distributed Bragg reflector is between 0.2-0.5. a) the first distributed Bragg reflector comprises the first part (115-1) and the second part (115-2), the first part (115-1) being arranged on a side of the tunnel junction facing the active layer and the second part (115-2) being arranged on a side of the tunnel junction which is turned away from the active layer , wherein the relative thickness of the second part (115-2) with respect to the total thickness of the first part and the second part (115-1, 115-2) of the first distributed Bragg reflector is between 0.2 -0.6; b) the second distributed Bragg reflector comprises the first part (125-1) and the second part (125-2), the second part (125-2) being arranged on a side of the tunnel junction facing away from the active layer and the first part (125-1) being arranged on a side of the tunnel junction facing the active layer , wherein the relative thickness of the second part (125-2) with respect to the total thickness of the first part and the second part (125-1, 125-2) of the second distributed Bragg reflector is between 0.2-0.5. <EOS>