A single phase, non-insulated, miniaturized DC/AC power inverter having an output power density higher than 3000 W/dm 3 and comprising : - a DC input; - an AC output; - at least a H full-bridge topology switching circuit having an input connected to the DC input and an output connected to the AC output, and comprising switches made of wide-band semiconductors and preferably of gallium nitride or GaN semiconductors ; - at least one common mode noise EMI filter connected between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said common mode noise filters being referenced to an earth shielding or directly to earth , said common noise filters comprising filtering inductors and so-called Y capacitors ; - at least one differential mode noise EMI filter connected, in series with a corresponding common mode noise filter , between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said differential mode noise filters comprising so-called X filtering capacitors and optionally inductors ; - a ripple-compensating active filter comprising a switching half-bridge topology provided in parallel with the H full-bridge switching circuit and connected to a LC filter, made of at least one inductor (L6) and a plurality of storage capacitors (C5) ; wherein said power inverter is packaged in a casing made of an external electrically conductive enclosure containing a fan blowing in an axial direction to a side face of the casing and, in a stacked elevation arrangement, successively from a bottom side to a top side, a layer of active filter capacitors , a heatsink , a layer of wideband semiconductors switches connected to a PCB with thermal vias and a layer of active filtering inductors , the fan and the component stacked arrangement being designed so as, in operation, the external temperature of the casing does not overcome 60°C in any point, for an ambient temperature of maximum 30°C under a maximum load of 2 kVA. - a DC input; - an AC output; - at least a H full-bridge topology switching circuit having an input connected to the DC input and an output connected to the AC output, and comprising switches made of wide-band semiconductors and preferably of gallium nitride or GaN semiconductors ; - at least one common mode noise EMI filter connected between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said common mode noise filters being referenced to an earth shielding or directly to earth , said common noise filters comprising filtering inductors and so-called Y capacitors ; - at least one differential mode noise EMI filter connected, in series with a corresponding common mode noise filter , between the DC input and the input of the H full-bridge switching circuit, between the output of the H full-bridge switching circuit and the AC output respectively, said differential mode noise filters comprising so-called X filtering capacitors and optionally inductors ; - a ripple-compensating active filter comprising a switching half-bridge topology provided in parallel with the H full-bridge switching circuit and connected to a LC filter, made of at least one inductor (L6) and a plurality of storage capacitors (C5) ; <EOS>