mhurhangee/patent-ind-claim-en huggingface dataset:
An anti-puckering apparatus for forming, on a work piece, a line of stitching substantially free from puckering; the apparatus comprising: (i) a base member for removable attachment to a sewing machine bed surface proximate a needle and a stitch formation zone ; (ii) a carrier member mounted on, and rotatable relative to, the base member; and (iii) an endless row of flexible filamentary elements carried by the carrier member; wherein the carrier member is designed to progressively move subsets of its filamentary elements into and out of a stitch formation zone during the formation of a line of stitching; characterized in that the filamentary elements are presented across a stitch formation zone in advance of an intended line of stitching at an oblique angle relative to a sewing machine bed surface . (i) a base member for removable attachment to a sewing machine bed surface proximate a needle and a stitch formation zone ; (ii) a carrier member mounted on, and rotatable relative to, the base member; and (iii) an endless row of flexible filamentary elements carried by the carrier member;
A process for the preparation of Raltegravir of formula (I), or pharmaceutically acceptable salts thereof, comprising the reaction of an unprotected compound of formula ( II ) in anhydrous form, or an anhydrous salt thereof, with a compound of formula (III), wherein X = Cl; or X = OAr wherein Ar is a phenyl group substituted with one or more groups, the same or different from each other, selected from halogen (F, Cl, Br or I), a cyano group or a nitro group; or X is a substituent of formula ( IV ): wherein Z=H (X = IVa) or Z= (X = IVb) wherein the compound of formula ( III ) is used in amounts from 1.1 to 1.3 molar equivalent compared with the compound of formula ( II ); in a reaction solvent and in the presence of one or more bases, wherein at least one base has a pKa value ≥ 7,4, in a total amount ranging from 1.5 to 2.9 molar equivalent compared with the compound of formula ( II ) or in total amount ranging from 2.5 to 3.9 molar equivalent compared with the anhydrous salt of the compound of formula ( II ) which is produced in situ; and at a reaction temperature ranging from 45 to 75°C. X = Cl; or X = OAr wherein Ar is a phenyl group substituted with one or more groups, the same or different from each other, selected from halogen (F, Cl, Br or I), a cyano group or a nitro group; or X is a substituent of formula ( IV ): wherein Z=H (X = IVa) or Z= (X = IVb) wherein the compound of formula ( III ) is used in amounts from 1.1 to 1.3 molar equivalent compared with the compound of formula ( II ); in a reaction solvent and in the presence of one or more bases, wherein at least one base has a pKa value ≥ 7,4, in a total amount ranging from 1.5 to 2.9 molar equivalent compared with the compound of formula ( II ) or in total amount ranging from 2.5 to 3.9 molar equivalent compared with the anhydrous salt of the compound of formula ( II ) which is produced in situ; and at a reaction temperature ranging from 45 to 75°C.
A wetting agent comprising a composition according to Formula (I): wherein R 1 is selected from a branched alkyl group or linear alkyl group or a cycloaliphatic group or an aromatic group, each having 6 to 15 carbon atoms; R 2 is selected from hydrogen, methyl, or ethyl; R 3 is selected from hydrogen, methyl, or ethyl; R 4 is selected from hydrogen, methyl, or ethyl; R 5 is selected from methyl or ethyl; x is 0; y ranges from 0 to 10; z ranges from 1 to 10; with the proviso that R 3 is different from R 4 , and a composition according to Formula (II): wherein R 6 is the same as R 1 , R 7 is the same as R 2 , R 8 is the same as R 3 and R 9 is the same as R 4 , a equals x, b equals y and c equals z. R 1 is selected from a branched alkyl group or linear alkyl group or a cycloaliphatic group or an aromatic group, each having 6 to 15 carbon atoms; R 2 is selected from hydrogen, methyl, or ethyl; R 3 is selected from hydrogen, methyl, or ethyl; R 4 is selected from hydrogen, methyl, or ethyl; R 5 is selected from methyl or ethyl; x is 0; y ranges from 0 to 10; z ranges from 1 to 10; with the proviso that R 3 is different from R 4 , and a composition according to Formula (II): wherein R 6 is the same as R 1 , R 7 is the same as R 2 , R 8 is the same as R 3 and R 9 is the same as R 4 , a equals x, b equals y and c equals z.
A brushing device comprising: a motor including an eccentric drive shaft ; an output shaft operably connected to the motor ; and a power train assembly coupled between the eccentric drive shaft and the output shaft , wherein the power train assembly converts rotation of the eccentric drive shaft into an oscillation movement of the output shaft ; wherein the power train assembly further comprises a rocker arm coupled between the eccentric drive shaft and the output shaft , wherein movement of the rocker arm is constrained to convert rotation of the eccentric drive shaft to oscillating movement of the output shaft ; and wherein the power train assembly further comprises an eccentric coupled between the eccentric drive shaft and the rocker arm . a motor including an eccentric drive shaft ; an output shaft operably connected to the motor ; and a power train assembly coupled between the eccentric drive shaft and the output shaft , wherein the power train assembly converts rotation of the eccentric drive shaft into an oscillation movement of the output shaft ; wherein the power train assembly further comprises a rocker arm coupled between the eccentric drive shaft and the output shaft , wherein movement of the rocker arm is constrained to convert rotation of the eccentric drive shaft to oscillating movement of the output shaft ; and wherein the power train assembly further comprises an eccentric coupled between the eccentric drive shaft and the rocker arm .
An extruded thermoplastic composition comprising: a) from 20 wt % to 75 wt % of a ceramic fiber component; b) from 15 wt % to 70 wt % of a polybutylene terephthalate (PBT) component comprising a high molecular weight PBT and a low molecular weight PBT; c) from 5 wt % to 23 wt % of a polycarbonate component; and d) from 1 wt % to 10 wt % of a compatibilizer component, wherein the extruded thermoplastic composition is extruded under conditions that apply a specific energy of less than 90 W-Hr/kg to the extruded thermoplastic composition, the high molecular weight PBT has a Mw of greater than 100,000 grams per mole (g/mol) and the low molecular weight PBT has a Mw of less than 70,000 g/mol, molecular weight is determined by gel permeation chromatography (GPC), the combined weight percent value of all components does not exceed 100 wt %, and all weight percent values are based on the total weight of the extruded thermoplastic composition. a) from 20 wt % to 75 wt % of a ceramic fiber component; b) from 15 wt % to 70 wt % of a polybutylene terephthalate (PBT) component comprising a high molecular weight PBT and a low molecular weight PBT; c) from 5 wt % to 23 wt % of a polycarbonate component; and d) from 1 wt % to 10 wt % of a compatibilizer component, the extruded thermoplastic composition is extruded under conditions that apply a specific energy of less than 90 W-Hr/kg to the extruded thermoplastic composition, the high molecular weight PBT has a Mw of greater than 100,000 grams per mole (g/mol) and the low molecular weight PBT has a Mw of less than 70,000 g/mol, molecular weight is determined by gel permeation chromatography (GPC), the combined weight percent value of all components does not exceed 100 wt %, and all weight percent values are based on the total weight of the extruded thermoplastic composition.
A force measuring device for the single-axis or multi-axis acquisition of acting forces and moments, comprising a first flange-like part , via which the forces to be measured are introduced, a second flange-like part , via which the introduced forces are absorbed and dissipated, and a deformation zone with a tube-like configuration connecting these two parts, via which all tensile, compressive, torsional and shear forces acting on the first flange-like part are transferred to the second flange-like part , wherein the deformation zone is provided with deformation transducers , wherein a cavity, which is filled with a liquid and disposed behind the deformation zone , is formed in a measuring body formed by the first and second flange-like parts and the deformation zone , wherein the deformation zone is at least partially in planar contact with the liquid , and the liquid is in thermal contact with the two flange-like parts , and wherein the force measuring device is configured for dissipating heat away at least from the deformation zone via the liquid , characterized in that the force measuring device has an annular configuration, and that the cavity is formed by a groove-like recess from the inside of the deformation zone , wherein a cylindrical inner wall seals the cavity towards the inside.
A hinge, comprising: a hinge frame ; a pivot member pivotably engaged with the hinge frame , the pivot member being attached to a support component movably attached to a device ; an elongated member attached to the to hinge frame , the elongated member having a ramped surface on at least a first portion of the elongated member ; an engagement member slidably engaged with the elongated member , the engagement member configured to slide along the elongated member during pivoting of the pivot member relative to the hinge frame , the sliding of the engagement member along the taped ramped surface of the elongated member causing variations in a sliding friction based on an amount of change in surface height over longitudinal distance of the ramped surface and contributing to a torque profile of the hinge , and being characterized by further comprising one or more linkage members having a first end and second end, the first end rotatably connected with the engagement member and the second end rotatably connected with the pivot member, the one or more linkage members configured to connect the engagement member to the pivot member and the engagement member causing linear movement of the engagement member to slide along the elongated member during pivoting of the pivot member relative to the hinge frame, and wherein the first end of the one or more linkage members is rotatably connected between an interior of a mounting flange of the engagement member and the elongated member. a hinge frame ; a pivot member pivotably engaged with the hinge frame , the pivot member being attached to a support component movably attached to a device ; an elongated member attached to the to hinge frame , the elongated member having a ramped surface on at least a first portion of the elongated member ; an engagement member slidably engaged with the elongated member , the engagement member configured to slide along the elongated member during pivoting of the pivot member relative to the hinge frame , the sliding of the engagement member along the taped ramped surface of the elongated member causing variations in a sliding friction based on an amount of change in surface height over longitudinal distance of the ramped surface and contributing to a torque profile of the hinge , and being characterized by further comprising one or more linkage members having a first end and second end, the first end rotatably connected with the engagement member and the second end rotatably connected with the pivot member, the one or more linkage members configured to connect the engagement member to the pivot member and the engagement member causing linear movement of the engagement member to slide along the elongated member during pivoting of the pivot member relative to the hinge frame, and wherein the first end of the one or more linkage members is rotatably connected between an interior of a mounting flange of the engagement member and the elongated member.
A power amplifier system , comprising: - a differential power amplifier , configured to receive a differential input pair to generate an output signal; and - a bias circuit , configured to generate a bias voltage (VB) to bias the differential power amplifier , wherein: - the bias circuit comprises a source follower , configured to receive a reference voltage to generate the bias voltage and having an input node (Nin) and an output node (Nout), - the differential power amplifier is configured to receive the differential input pair from a transformer , and the source follower is configured to receive the reference voltage at the input node (Nin) to generate the bias voltage (VB) to a center tap of the transformer to bias the differential power amplifier , - the bias circuit further comprises a harmonic rejection circuit , (i) coupled between the output node (Nout) of the source follower and the center tap of the transformer , configured to reject power amplifier kick-back harmonic(s), and (ii) connected between the output node (Nout) of the source follower and a ground voltage node, - the output node (Nout) of the source follower is directly connected to the center tap of the transformer thereby yielding a low output impedance of the source follower , and - the harmonic rejection circuit is implemented by at least an inductor and at least a capacitor. - a differential power amplifier , configured to receive a differential input pair to generate an output signal; and - a bias circuit , configured to generate a bias voltage (VB) to bias the differential power amplifier , - the bias circuit comprises a source follower , configured to receive a reference voltage to generate the bias voltage and having an input node (Nin) and an output node (Nout), - the differential power amplifier is configured to receive the differential input pair from a transformer , and the source follower is configured to receive the reference voltage at the input node (Nin) to generate the bias voltage (VB) to a center tap of the transformer to bias the differential power amplifier , - the bias circuit further comprises a harmonic rejection circuit , (i) coupled between the output node (Nout) of the source follower and the center tap of the transformer , configured to reject power amplifier kick-back harmonic(s), and (ii) connected between the output node (Nout) of the source follower and a ground voltage node, - the output node (Nout) of the source follower is directly connected to the center tap of the transformer thereby yielding a low output impedance of the source follower , and - the harmonic rejection circuit is implemented by at least an inductor and at least a capacitor.
An antenna device including: a ground plane including a first surface; an array of spaced apart conductive antenna patches arranged substantially along a second surface that is parallel to and offset from said first surface; wherein the array of spaced apart conductive antenna patches form a self complementary or a checkerboard array of spaced apart conductive antenna patches; a plurality of driving circuits ;a plurality of conductive feed interconnections each including a pair of feed conductors , wherein each conductive feed interconnection including the pair of feed conductors is associated with a particular polarization state, connected to an associated driving circuit , and capacitively coupled to two neighbouring conductive antenna patches between pairs of nearest corners, thereby to provide a capacitive coupling between the conductive antenna patches and the driving circuits to electrically drive the conductive antenna patches at the particular polarization state; and wherein each feed conductor of a conductive feed interconnection projects through an aperture in said ground plane and includes a thickness configured to provide a complementary series inductance to said capacitive coupling to improve the impedance matching between the conductive feed interconnections and the conductive antenna patches . a ground plane including a first surface; an array of spaced apart conductive antenna patches arranged substantially along a second surface that is parallel to and offset from said first surface; wherein the array of spaced apart conductive antenna patches form a self complementary or a checkerboard array of spaced apart conductive antenna patches; a plurality of driving circuits ;a plurality of conductive feed interconnections each including a pair of feed conductors , wherein each conductive feed interconnection including the pair of feed conductors is associated with a particular polarization state, connected to an associated driving circuit , and capacitively coupled to two neighbouring conductive antenna patches between pairs of nearest corners, thereby to provide a capacitive coupling between the conductive antenna patches and the driving circuits to electrically drive the conductive antenna patches at the particular polarization state; and wherein each feed conductor of a conductive feed interconnection projects through an aperture in said ground plane and includes a thickness configured to provide a complementary series inductance to said capacitive coupling to improve the impedance matching between the conductive feed interconnections and the conductive antenna patches .
Apparatus (10; 10a) for the generative manufacturing of workpieces , comprising a carrier device (12; 12a), comprising at least one building-up container (21 to 24; 72) for powdered material , wherein a workpiece can be produced within the at least one building-up container (21 to 24; 72) by means of at least one processing beam by selective melting and subsequent hardening of a respectively uppermost powder layer , and comprising at least one powder spreader (28; 28a) for the at least one building-up container (21 to 24; 72), wherein the at least one building-up container (21 to 24; 72) and the at least one powder spreader (28; 28a) are arranged adjustably in height in relation to one another for introducing the uppermost powder layer , and in that a device (44; 44a) for producing at least two processing beams is provided, wherein the at least two processing beams are assigned to a single building-up container (21 to 24; 72) during the production of the workpiece , characterized in that the device for producing at least two processing beams is assigned a shielding gas device , the shielding-gas feeding region and shielding-gas discharging region of which are arranged upstream and downstream of processing regions of the at least two processing beams with respect to the direction of movement of the building-up container (21 to 24).
A terminal identification method, the method comprising: receiving , by a first mobility management entity, a first request, wherein the first request comprises area information of a first area and information used to indicate a first type, wherein the area information is used to indicate the first area and the first type is an unmanned aerial vehicle, and the first request is used to request to identify a first-type terminal in the first area; and sending , by the first mobility management entity, a response to the first request to a network exposure function based on the first request, wherein the response to the first request is used to indicate that the first-type terminal is identified in the first area, wherein the identified first-type terminal comprises a first terminal, wherein the first terminal is located in the first area and a type of the first terminal is the first type, and the response to the first request comprises an identifier of the first terminal. receiving , by a first mobility management entity, a first request, wherein the first request comprises area information of a first area and information used to indicate a first type, wherein the area information is used to indicate the first area and the first type is an unmanned aerial vehicle, and the first request is used to request to identify a first-type terminal in the first area; and sending , by the first mobility management entity, a response to the first request to a network exposure function based on the first request, wherein the response to the first request is used to indicate that the first-type terminal is identified in the first area, wherein the identified first-type terminal comprises a first terminal, wherein the first terminal is located in the first area and a type of the first terminal is the first type, and the response to the first request comprises an identifier of the first terminal.
A light emitting device comprising: a light emitting structure including a first conductivity type semiconductor layer , an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer; a first electrode layer including: a first contact layer disposed under the light emitting structure; a reflective layer disposed under the first contact layer; and a capping layer disposed under the reflective layer; a second electrode layer electrically connected to the first conductivity type semiconductor layer; a protective layer disposed at an outer peripheral portion of a region between the capping layer and the light emitting structure; a barrier layer disposed at an outer peripheral portion of the reflective layer; and a support member disposed under the capping layer, wherein the barrier layer is formed of metal, and wherein the barrier layer is disposed between a bottom surface of the light emitting structure and the capping layer , wherein the barrier layer contacts a bottom surface of the light emitting structure and a top surface of the capping layer . a light emitting structure including a first conductivity type semiconductor layer , an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer; a first electrode layer including: a first contact layer disposed under the light emitting structure; a reflective layer disposed under the first contact layer; and a capping layer disposed under the reflective layer; a second electrode layer electrically connected to the first conductivity type semiconductor layer; a protective layer disposed at an outer peripheral portion of a region between the capping layer and the light emitting structure; a barrier layer disposed at an outer peripheral portion of the reflective layer; and a support member disposed under the capping layer, wherein the barrier layer is formed of metal, and wherein the barrier layer is disposed between a bottom surface of the light emitting structure and the capping layer , wherein the barrier layer contacts a bottom surface of the light emitting structure and a top surface of the capping layer .