Method for producing a microelectronic device with the following stacked on one side of a substrate : - a first current collector, - a first electrode , - an active layer , - a second electrode , - a second current collector , wherein the first current collector comprises a first collector element including an upper portion in contact with the first electrode and a second collector element in electrical continuity with, and extending laterally from, the first collector element beyond the first electrode , with the device further comprising a dielectric element configured to electrically insulate the second collector element and at least one among the second electrode and the second current collector , characterised in that the second collector element comprises at least one layer of material and in that it includes the forming of an upper portion of the second collector element made of a material different from the material of the upper portion of the first collector element and transforming the material of only part of the thickness of the upper portion of the second collector element into a modified material so as to form a surface layer made of modified dielectric material forming at least part of the dielectric element. - a first current collector, - a first electrode , - an active layer , - a second electrode , - a second current collector , wherein the first current collector comprises a first collector element including an upper portion in contact with the first electrode and a second collector element in electrical continuity with, and extending laterally from, the first collector element beyond the first electrode , with the device further comprising a dielectric element configured to electrically insulate the second collector element and at least one among the second electrode and the second current collector , characterised in that the second collector element comprises at least one layer of material and in that it includes the forming of an upper portion of the second collector element made of a material different from the material of the upper portion of the first collector element and transforming the material of only part of the thickness of the upper portion of the second collector element into a modified material so as to form a surface layer made of modified dielectric material forming at least part of the dielectric element. wherein the first current collector comprises a first collector element including an upper portion in contact with the first electrode and a second collector element in electrical continuity with, and extending laterally from, the first collector element beyond the first electrode , with the device further comprising a dielectric element configured to electrically insulate the second collector element and at least one among the second electrode and the second current collector , characterised in that the second collector element comprises at least one layer of material and in that it includes the forming of an upper portion of the second collector element made of a material different from the material of the upper portion of the first collector element and transforming the material of only part of the thickness of the upper portion of the second collector element into a modified material so as to form a surface layer made of modified dielectric material forming at least part of the dielectric element. <EOS>