A sensor device for detecting an incident energy beam (ESB), the sensor device comprising layers stacked in a z-direction of a three-dimensional coordinate system, which are aligned parallel to an xy plane of the three-dimensional coordinate system, the layers comprising: a first photodiode layer , said first photodiode layer comprising one or more organic photoactive layers interposed between two electrode layers (4.1, 4.2) of the first photodiode layer , wherein at least four measuring contacts (5.1, 5.2, 5.3, 5.4) are arranged on the electrode layers (4.1, 4.2) of the first photodiode layer , at each of which measuring contacts a partial current (T5.1, T5.2, T5.3, T5.4) of a photocurrent of the first photodiode layer dependent on the incident energy beam (ESB) can be tapped, so that an x coordinate and a y coordinate in the three-dimensional coordinate system of the incident energy beam (ESB) in the photoactive layers of the first photodiode layer can be determined from measurements of the at least four partial currents (T5.1, T5.2, T5.3, T5.4) of the first photodiode layer ; and a second photodiode layer fixed to the first photodiode layer , the second photodiode layer comprising one or more organic photoactive layers interposed between two electrode layers (8.1, 8.2) of the second photodiode layer , wherein at least four measuring contacts (9.1, 9.2, 9.3, 9.4) are arranged on the electrode layers (8.1, 8.2) of the second photodiode layer , at each of which measuring contacts a partial current (S9.1, S9.2, S9.3, S9.4) of a photocurrent of the second photodiode layer dependent on the incident energy beam can be tapped, so that an x coordinate and a y coordinate in the three-dimensional coordinate system of the incident energy beam (ESB) in the photoactive layers of the second photodiode layer can be determined from measurements of the at least four partial currents (S9.1, S9.2, S9.3, S9.4) of the second photodiode layer ; wherein at least one of the photodiode layers is transparent. a first photodiode layer , said first photodiode layer comprising one or more organic photoactive layers interposed between two electrode layers (4.1, 4.2) of the first photodiode layer , wherein at least four measuring contacts (5.1, 5.2, 5.3, 5.4) are arranged on the electrode layers (4.1, 4.2) of the first photodiode layer , at each of which measuring contacts a partial current (T5.1, T5.2, T5.3, T5.4) of a photocurrent of the first photodiode layer dependent on the incident energy beam (ESB) can be tapped, so that an x coordinate and a y coordinate in the three-dimensional coordinate system of the incident energy beam (ESB) in the photoactive layers of the first photodiode layer can be determined from measurements of the at least four partial currents (T5.1, T5.2, T5.3, T5.4) of the first photodiode layer ; and a second photodiode layer fixed to the first photodiode layer , the second photodiode layer comprising one or more organic photoactive layers interposed between two electrode layers (8.1, 8.2) of the second photodiode layer , wherein at least four measuring contacts (9.1, 9.2, 9.3, 9.4) are arranged on the electrode layers (8.1, 8.2) of the second photodiode layer , at each of which measuring contacts a partial current (S9.1, S9.2, S9.3, S9.4) of a photocurrent of the second photodiode layer dependent on the incident energy beam can be tapped, so that an x coordinate and a y coordinate in the three-dimensional coordinate system of the incident energy beam (ESB) in the photoactive layers of the second photodiode layer can be determined from measurements of the at least four partial currents (S9.1, S9.2, S9.3, S9.4) of the second photodiode layer ; wherein at least one of the photodiode layers is transparent. <EOS>