An optoelectronic device , comprising: a semiconductor substrate ; and a regular array of optoelectronic cells , which are formed on the semiconductor substrate and comprise: first epitaxial layers defining a lower distributed Bragg-reflector ,DBR, stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers , formed over the quantum well structure , defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells, wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells , interleaved with the first set , in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes , is configured so that the optoelectronic cells in the second set do not emit the laser radiation, characterized in that the first set of the optoelectronic cells are arranged in an uncorrelated pattern within the regular array, such that an auto-correlation of the positions of the optoelectronic cells in the first set as a function of transverse shift is insignificant for any shift larger than a size of the optoelectronic cells. a semiconductor substrate ; and a regular array of optoelectronic cells , which are formed on the semiconductor substrate and comprise: first epitaxial layers defining a lower distributed Bragg-reflector ,DBR, stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers , formed over the quantum well structure , defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells, first epitaxial layers defining a lower distributed Bragg-reflector ,DBR, stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers , formed over the quantum well structure , defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells, wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells , interleaved with the first set , in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes , is configured so that the optoelectronic cells in the second set do not emit the laser radiation, characterized in that the first set of the optoelectronic cells are arranged in an uncorrelated pattern within the regular array, such that an auto-correlation of the positions of the optoelectronic cells in the first set as a function of transverse shift is insignificant for any shift larger than a size of the optoelectronic cells. <EOS>