A system for treating a surface of a foreign metallic implant, said system comprising: - one or more external transmitter devices comprising an alternating magnetic field, AMF, transmitter configured to apply one or more AMF pulses to the foreign metallic implant; - one or more sensors, wherein the sensors are at least one of temperature sensors, optical sensors, wireless sensors and external acoustic sensor devices, wherein if the sensors comprise external acoustic sensor devices, the external acoustic sensor devices are configured to receive one or more acoustic emission signatures from tissue located in a vicinity of the foreign metallic implant; and - a control system comprising at least one processor, the control system configured to: enable the one or more external transmitter devices to apply one or more AMF pulses to the foreign metallic implant for one or more of for a predetermined time period, for a predetermined pulse duration, for a predetermined pulse repetition frequency, and at a predetermined power level; ∘ receive one or more signals from the one or more sensors; ∘ if the one or more sensors are external acoustic sensor devices, determine that the one or more signals correspond to one or more acoustic emission signatures greater than a predetermined threshold associated with a temperature of tissue adjacent the implant. - one or more external transmitter devices comprising an alternating magnetic field, AMF, transmitter configured to apply one or more AMF pulses to the foreign metallic implant; - one or more sensors, wherein the sensors are at least one of temperature sensors, optical sensors, wireless sensors and external acoustic sensor devices, wherein if the sensors comprise external acoustic sensor devices, the external acoustic sensor devices are configured to receive one or more acoustic emission signatures from tissue located in a vicinity of the foreign metallic implant; and - a control system comprising at least one processor, the control system configured to: enable the one or more external transmitter devices to apply one or more AMF pulses to the foreign metallic implant for one or more of for a predetermined time period, for a predetermined pulse duration, for a predetermined pulse repetition frequency, and at a predetermined power level; ∘ receive one or more signals from the one or more sensors; ∘ if the one or more sensors are external acoustic sensor devices, determine that the one or more signals correspond to one or more acoustic emission signatures greater than a predetermined threshold associated with a temperature of tissue adjacent the implant. enable the one or more external transmitter devices to apply one or more AMF pulses to the foreign metallic implant for one or more of for a predetermined time period, for a predetermined pulse duration, for a predetermined pulse repetition frequency, and at a predetermined power level; ∘ receive one or more signals from the one or more sensors; ∘ if the one or more sensors are external acoustic sensor devices, determine that the one or more signals correspond to one or more acoustic emission signatures greater than a predetermined threshold associated with a temperature of tissue adjacent the implant. <EOS>