An optoelectronic semiconductor body, which contains a semiconductor material which is composed of a first component and a second component different from the first component, and which comprises a multiple quantum well structure arranged between an n-conducting layer and a p-conducting layer , the multiple quantum well structure consisting of - a layer stack , which consists of a plurality of quantum well layers and at least one barrier layer , one barrier layer being arranged between each pair of successive quantum wall layers , which barrier layer adjoins both quantum wall layers ; - an n-side terminating layer , which adjoins the layer stack and the n-conducting layer ; and - a p-side terminating layer , which is arranged between the layer stack and the p-conducting layer and adjoins the layer stack , wherein the first component of the semiconductor material is formed of In, and wherein the mole fraction (x) of the first component of the semiconductor material - is greater in each of the quantum wall layers than in the n-side terminating layer , in the at least one barrier layer and in the p-side terminating layer ; and - is greater in the n-side terminating layer than in the n-conducting layer and is greater in the p-side terminating layer than in the p-conducting layer , and wherein - the n-conducting layer comprises a p-side boundary zone , which adjoins an n-side boundary zone of the n-side terminating layer , - the p-side boundary zone of the n-conducting layer and the n-side boundary zone of the n-side terminating layer are doped with an n-dopant, - the n-side terminating layer comprises a p-side boundary zone , which directly adjoins the layer stack and which is nominally undoped, and - the n-dopant in the p-side boundary zone of the n-conducting layer and in the n-side boundary zone of the n-side terminating layer is present in a concentration of greater than or equal to 5 × 10 18 atoms/cm 3 . - a layer stack , which consists of a plurality of quantum well layers and at least one barrier layer , one barrier layer being arranged between each pair of successive quantum wall layers , which barrier layer adjoins both quantum wall layers ; - an n-side terminating layer , which adjoins the layer stack and the n-conducting layer ; and - a p-side terminating layer , which is arranged between the layer stack and the p-conducting layer and adjoins the layer stack , wherein the first component of the semiconductor material is formed of In, and wherein the mole fraction (x) of the first component of the semiconductor material - is greater in each of the quantum wall layers than in the n-side terminating layer , in the at least one barrier layer and in the p-side terminating layer ; and - is greater in the n-side terminating layer than in the n-conducting layer and is greater in the p-side terminating layer than in the p-conducting layer , and wherein - the n-conducting layer comprises a p-side boundary zone , which adjoins an n-side boundary zone of the n-side terminating layer , - the p-side boundary zone of the n-conducting layer and the n-side boundary zone of the n-side terminating layer are doped with an n-dopant, - the n-side terminating layer comprises a p-side boundary zone , which directly adjoins the layer stack and which is nominally undoped, and - the n-dopant in the p-side boundary zone of the n-conducting layer and in the n-side boundary zone of the n-side terminating layer is present in a concentration of greater than or equal to 5 × 10 18 atoms/cm 3 . <EOS>