Stack-shaped III-V semiconductor diode , comprising - an n + layer with an upper side, a lower side, a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness (D1) of 50 - 675 μm, wherein the n + layer comprises a GaAs compound or consists of a GaAs compound, - an n - layer with an upper side and a lower side, a doping concentration of 10 12 - 10 16 N/cm 3 and a layer thickness (D2) of 10 - 300 μm, wherein the n - layer comprises a GaAs compound or consists of a GaAs compound, - a p + layer with an upper side, a lower side, a doping concentration of 5 • 10 18 -5 • 10 20 N/cm 3 and a layer thickness (D3) of 2 μm, wherein the p + layer comprises a GaAs compound or consists of a GaAs compound, wherein - the layers follow one another in the stated sequence and are of monolithic construction, - the n + layer is constructed as a substrate and - the lower side of the n - layer is connected by material couple with the upper side of the n + layer , arranged between the n - layer and the p + layer is a p-doped intermediate layer with a layer thickness (D5) of 1 - 50 μm and a doping substance concentration of 10 12 - 10 17 N/cm 3 , and with an upper side and a lower side, wherein the lower side of the p-doped intermediate layer is connected by material couple with the upper side of the n - layer and the upper side of the p-doped intermediate layer is connected by material couple with the lower side of the p + layer , - wherein the stack-shaped III-V semiconductor diode has a first defect layer with a layer thickness (D41) between 0.5 μm and 40 μm, - wherein the first defect layer is arranged within the p-doped intermediate layer and - the first defect layer has a defect concentration in the range between 1 • 10 13 N/cm 3 and 5 • 10 16 N/cm 3 , a first contact is connected by material couple with a lower side of the n + layer and a second contact is connected by material couple with an upper side of the p + layer . - an n + layer with an upper side, a lower side, a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness (D1) of 50 - 675 μm, wherein the n + layer comprises a GaAs compound or consists of a GaAs compound, - an n - layer with an upper side and a lower side, a doping concentration of 10 12 - 10 16 N/cm 3 and a layer thickness (D2) of 10 - 300 μm, wherein the n - layer comprises a GaAs compound or consists of a GaAs compound, - a p + layer with an upper side, a lower side, a doping concentration of 5 • 10 18 -5 • 10 20 N/cm 3 and a layer thickness (D3) of 2 μm, wherein the p + layer comprises a GaAs compound or consists of a GaAs compound, wherein - the layers follow one another in the stated sequence and are of monolithic construction, - the n + layer is constructed as a substrate and - the lower side of the n - layer is connected by material couple with the upper side of the n + layer , arranged between the n - layer and the p + layer is a p-doped intermediate layer with a layer thickness (D5) of 1 - 50 μm and a doping substance concentration of 10 12 - 10 17 N/cm 3 , and with an upper side and a lower side, wherein the lower side of the p-doped intermediate layer is connected by material couple with the upper side of the n - layer and the upper side of the p-doped intermediate layer is connected by material couple with the lower side of the p + layer , - wherein the stack-shaped III-V semiconductor diode has a first defect layer with a layer thickness (D41) between 0.5 μm and 40 μm, - wherein the first defect layer is arranged within the p-doped intermediate layer and - the first defect layer has a defect concentration in the range between 1 • 10 13 N/cm 3 and 5 • 10 16 N/cm 3 , a first contact is connected by material couple with a lower side of the n + layer and a second contact is connected by material couple with an upper side of the p + layer . <EOS>