A flat panel imaging system comprising: a housing including a base portion and a lid that collectively form a closed environment to exclude external sources of light from entering the housing ; and a flat panel detector encased in the base portion , the flat panel detector comprising: an array of pixels each including a photodiode and transistor , the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels ; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels , the system being characterised in that : the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample ; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample , when placed on the protective layer , and the amorphous silicon panel . a housing including a base portion and a lid that collectively form a closed environment to exclude external sources of light from entering the housing ; and a flat panel detector encased in the base portion , the flat panel detector comprising: an array of pixels each including a photodiode and transistor , the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels ; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels , the system being characterised in that : the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample ; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample , when placed on the protective layer , and the amorphous silicon panel . an array of pixels each including a photodiode and transistor , the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels ; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels , the system being characterised in that : the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample ; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample , when placed on the protective layer , and the amorphous silicon panel . <EOS>