A qubit coupling device for coupling a superconducting qubit to an adjustable coupler network, comprising: a dielectric substrate ; a first superconductor layer (102-1) formed directly on a surface of the dielectric substrate, wherein the first superconducting layer is formed from a superconductor material that exhibits superconducting behavior at or below a critical temperature and; and a second superconductor layer (102-2) formed directly on the surface of the dielectric substrate, wherein at least a portion of the second superconductor layer is in contact with the surface of the dielectric substrate wherein the second superconducting layer is formed from a superconductor material that exhibits superconducting behavior at or below a critical temperature and wherein the second superconducting layer is inductively coupled to the first superconducting layer to provide coupling between the superconducting qubit and the adjustable coupler network, and wherein the second superconducting layer is separated from the first superconducting layer by a first distance (108-1); wherein the dielectric substrate comprises a trench (106-1), wherein: the trench electric permittivity less than an electric permittivity of the dielectric substrate; and the trench is formed in a region between and adjacent to the first and second superconducting layers; wherein an edge of the first superconductor layer extends along a length of the trench and over a first edge of the trench such that a portion of a width of the trench partially extends under the first superconducting layer; and wherein an edge of the second superconductor layer is adjacent to a second edge of the trench and extends along the length of the trench. a dielectric substrate ; a first superconductor layer (102-1) formed directly on a surface of the dielectric substrate, wherein the first superconducting layer is formed from a superconductor material that exhibits superconducting behavior at or below a critical temperature and; and a second superconductor layer (102-2) formed directly on the surface of the dielectric substrate, wherein at least a portion of the second superconductor layer is in contact with the surface of the dielectric substrate wherein the second superconducting layer is formed from a superconductor material that exhibits superconducting behavior at or below a critical temperature and wherein the second superconducting layer is inductively coupled to the first superconducting layer to provide coupling between the superconducting qubit and the adjustable coupler network, and wherein the second superconducting layer is separated from the first superconducting layer by a first distance (108-1); wherein the dielectric substrate comprises a trench (106-1), wherein: the trench electric permittivity less than an electric permittivity of the dielectric substrate; and the trench is formed in a region between and adjacent to the first and second superconducting layers; the trench electric permittivity less than an electric permittivity of the dielectric substrate; and the trench is formed in a region between and adjacent to the first and second superconducting layers; wherein an edge of the first superconductor layer extends along a length of the trench and over a first edge of the trench such that a portion of a width of the trench partially extends under the first superconducting layer; and wherein an edge of the second superconductor layer is adjacent to a second edge of the trench and extends along the length of the trench. <EOS>