mhurhangee/patent-ind-claim-en huggingface dataset:
A position-based service information prompting method for a shared vehicle , comprising: acquiring a user's travel event information when assuming that a user needs nearby service information, the user's travel event information comprising information of successful unlocking and/or successful locking of the shared vehicle or information that a travel speed is lower than a preset speed threshold, or information that the travel speed is lower than the preset speed threshold and the state sustains for a preset first time threshold, or information that a radius of a travel area is smaller than a preset radius threshold and the state sustains for a preset second time threshold, or information that the travel speed is lower than a preset ratio of a maximum travel speed and the state sustains for a preset third time threshold; acquiring a user's geographic position information corresponding to occurrence of the user's travel event information; if there is available position-based service information around a user's position, sending the information to an APP device for the shared vehicle ; and prompting the service information around the user's position on a map interface of the APP device for the shared vehicle . acquiring a user's travel event information when assuming that a user needs nearby service information, the user's travel event information comprising information of successful unlocking and/or successful locking of the shared vehicle or information that a travel speed is lower than a preset speed threshold, or information that the travel speed is lower than the preset speed threshold and the state sustains for a preset first time threshold, or information that a radius of a travel area is smaller than a preset radius threshold and the state sustains for a preset second time threshold, or information that the travel speed is lower than a preset ratio of a maximum travel speed and the state sustains for a preset third time threshold; acquiring a user's geographic position information corresponding to occurrence of the user's travel event information; if there is available position-based service information around a user's position, sending the information to an APP device for the shared vehicle ; and prompting the service information around the user's position on a map interface of the APP device for the shared vehicle .
An etching method for etching a SiC substrate that is stored in a storing container, by heating the SiC substrate under Si vapor pressure, wherein the storing container is formed of a tantalum metal, and a tantalum carbide layer is provided on an internal space side of the tantalum metal, and a tantalum silicide layer is provided on the side further toward the internal space side than the tantalum carbide layer, the rate of etching of the SiC substrate is controlled in accordance with the ratio of the amount of tantalum substance that is contained in the compound for forming the tantalum silicide layer, at least two storing containers in which compositions of the tantalum silicide layer are different from each other are used depending on performed processes, and a high rate etching and low rate etching can be performed, in the high rate etching, the storing container having a higher ratio of tantalum occupied in one molecule of a compound for forming the tantalum silicide layer is used, in the low rate etching, the storing container having a lower ratio of tantalum occupied in one molecule of the compound for forming the tantalum silicide layer is used. the storing container is formed of a tantalum metal, and a tantalum carbide layer is provided on an internal space side of the tantalum metal, and a tantalum silicide layer is provided on the side further toward the internal space side than the tantalum carbide layer, the rate of etching of the SiC substrate is controlled in accordance with the ratio of the amount of tantalum substance that is contained in the compound for forming the tantalum silicide layer, at least two storing containers in which compositions of the tantalum silicide layer are different from each other are used depending on performed processes, and a high rate etching and low rate etching can be performed, in the high rate etching, the storing container having a higher ratio of tantalum occupied in one molecule of a compound for forming the tantalum silicide layer is used, in the low rate etching, the storing container having a lower ratio of tantalum occupied in one molecule of the compound for forming the tantalum silicide layer is used.