A method for manufacturing an interdigitated back contact (IBC) photovoltaic device 1 comprising a substrate defining a plane (X-Y) and, parallel to said plane (X-Y), a longitudinal (A-A) and a lateral (B-B) direction, orthogonal to said longitudinal direction (A-A) and comprising the steps (A-E) of: - Step A: providing a substrate of a first- or second type doping being an n-type or a p-type doping and having a front side and a back side and realizing on said back side a semiconducting structure defining a front surface to the side of said substrate and a back surface opposite to said front surface , the semiconducting structure comprising individual doped portions of said first type doping and a doped semiconducting structure (6") of a second-type, being of the other type than said first type, to provide alternating electrical charge-types of semiconducting contacts; - Step B: realizing a conductive layer on top of said doped semiconducting structures and (6"); - Step C: realizing a patterned isolation resist layer , having a back surface , onto said conductive layer , and so that the formed resist layer comprises resist parts and contact apertures and isolation apertures , and so that the patterns of the isolation resist layer are aligned relative to said semiconducting structures (6', 6"); - Step D: applying a plurality of conductive pads onto said isolation resist layer , and so that the conductive pads fill said contact apertures making electrical contact to said conductive layer , - Step E: etching of the conductive layer in areas specified by isolation apertures in the isolation resist layer and realize trenches , extending between said back surface to at most the back surface of said semiconducting structure , to form electrically separated first type charge collecting structures (F1) and second type charge collecting structures (F2). - Step A: providing a substrate of a first- or second type doping being an n-type or a p-type doping and having a front side and a back side and realizing on said back side a semiconducting structure defining a front surface to the side of said substrate and a back surface opposite to said front surface , the semiconducting structure comprising individual doped portions of said first type doping and a doped semiconducting structure (6") of a second-type, being of the other type than said first type, to provide alternating electrical charge-types of semiconducting contacts; - Step B: realizing a conductive layer on top of said doped semiconducting structures and (6"); - Step C: realizing a patterned isolation resist layer , having a back surface , onto said conductive layer , and so that the formed resist layer comprises resist parts and contact apertures and isolation apertures , and so that the patterns of the isolation resist layer are aligned relative to said semiconducting structures (6', 6"); - Step D: applying a plurality of conductive pads onto said isolation resist layer , and so that the conductive pads fill said contact apertures making electrical contact to said conductive layer , - Step E: etching of the conductive layer in areas specified by isolation apertures in the isolation resist layer and realize trenches , extending between said back surface to at most the back surface of said semiconducting structure , to form electrically separated first type charge collecting structures (F1) and second type charge collecting structures (F2). <EOS>