Semiconductor wafer composed of monocrystalline silicon having an upper side surface and a lower side surface and a diameter of at least 200 mm, characterized by a warp of less than 1.2 μm, the warp being determined in accordance with the SEMI MF 1390-0218 standard; a nanotopography of the upper side surface, expressed as THA25 10%, of less than 5 nm; and a site-referenced nanotopography of the upper side surface of less than 6 nm, expressed as a maximum peak-to-valley distance on a site and referenced to sites with a surface area of in each case 25 mm x 25 mm; wherein in order to examine the nanotopography by means of an interferometer, a height map of the upper side surface of the semiconductor wafer is formed, which is filtered and over which an analysis window with a defined analysis area is moved; the analysis window has a circular circumference and a diameter of 25 mm and the unfiltered topography signal is filtered with a single Gaussian high-pass filter with a cut-off wavelength of 20 mm; the evaluation of the height differences in the analysis window is carried out in accordance with the method protocols defined in the SEMI M43-0418 and SEMI M78-0618 standards; a THA25 10% of less than 5 nm means that at most 10% of the analysed area of the upper side surface of the semiconductor wafer in the analysis window with a circular circumference and a diameter of 25 mm has a maximum height difference of 5 nm or greater; and in order to determine the site-referenced nanotopography, the upper side surface of the semiconductor wafer is subdivided into sites with a surface area of 25 mm x 25 mm, which are grouped around a site whose lower left corner is arranged in the centre of the upper side surface of the semiconductor wafer. a warp of less than 1.2 μm, the warp being determined in accordance with the SEMI MF 1390-0218 standard; a nanotopography of the upper side surface, expressed as THA25 10%, of less than 5 nm; and a site-referenced nanotopography of the upper side surface of less than 6 nm, expressed as a maximum peak-to-valley distance on a site and referenced to sites with a surface area of in each case 25 mm x 25 mm; wherein in order to examine the nanotopography by means of an interferometer, a height map of the upper side surface of the semiconductor wafer is formed, which is filtered and over which an analysis window with a defined analysis area is moved; the analysis window has a circular circumference and a diameter of 25 mm and the unfiltered topography signal is filtered with a single Gaussian high-pass filter with a cut-off wavelength of 20 mm; the evaluation of the height differences in the analysis window is carried out in accordance with the method protocols defined in the SEMI M43-0418 and SEMI M78-0618 standards; a THA25 10% of less than 5 nm means that at most 10% of the analysed area of the upper side surface of the semiconductor wafer in the analysis window with a circular circumference and a diameter of 25 mm has a maximum height difference of 5 nm or greater; and in order to determine the site-referenced nanotopography, the upper side surface of the semiconductor wafer is subdivided into sites with a surface area of 25 mm x 25 mm, which are grouped around a site whose lower left corner is arranged in the centre of the upper side surface of the semiconductor wafer. <EOS>