A semiconductor device comprising: a substrate (B); a semiconductor element (S) that is mounted on the substrate (B); a control lead terminal (L2) that is connected to a control electrode (TG) of the semiconductor element (S) via a conductive bonding material (HG) and a sealing portion that seals the substrate (B) and the semiconductor element (S); wherein the control lead terminal (L2) includes: a base portion that extends outward from the sealing portion , an intermediate portion (LGb) that is connected to the base portion and arranged in the sealing portion , and an inclined portion (LGa) that extends, from an end portion of the intermediate portion (LGb), diagonally with respect to the intermediate portion (LGb), wherein a portion, on a side of the inclined portion (LGa), of the intermediate portion (LGb) and the inclined portion (LGa) are thinner than the base portion, and wherein the control lead terminal (L2) is connected to the control electrode (TG), in a state where, a tip of the inclined portion (LGa) contacts with a position on an end side on the surface of the control electrode (TG), and the conductive bonding material (HG) arranged on the surface of the control electrode (TG) is joined only to the surface of the inclined portion facing the control electrode (TG). a substrate (B); a semiconductor element (S) that is mounted on the substrate (B); a control lead terminal (L2) that is connected to a control electrode (TG) of the semiconductor element (S) via a conductive bonding material (HG) and a sealing portion that seals the substrate (B) and the semiconductor element (S); wherein the control lead terminal (L2) includes: a base portion that extends outward from the sealing portion , an intermediate portion (LGb) that is connected to the base portion and arranged in the sealing portion , and an inclined portion (LGa) that extends, from an end portion of the intermediate portion (LGb), diagonally with respect to the intermediate portion (LGb), wherein a portion, on a side of the inclined portion (LGa), of the intermediate portion (LGb) and the inclined portion (LGa) are thinner than the base portion, and wherein the control lead terminal (L2) is connected to the control electrode (TG), in a state where, a tip of the inclined portion (LGa) contacts with a position on an end side on the surface of the control electrode (TG), and the conductive bonding material (HG) arranged on the surface of the control electrode (TG) is joined only to the surface of the inclined portion facing the control electrode (TG). a base portion that extends outward from the sealing portion , an intermediate portion (LGb) that is connected to the base portion and arranged in the sealing portion , and an inclined portion (LGa) that extends, from an end portion of the intermediate portion (LGb), diagonally with respect to the intermediate portion (LGb), wherein a portion, on a side of the inclined portion (LGa), of the intermediate portion (LGb) and the inclined portion (LGa) are thinner than the base portion, and wherein the control lead terminal (L2) is connected to the control electrode (TG), in a state where, a tip of the inclined portion (LGa) contacts with a position on an end side on the surface of the control electrode (TG), and the conductive bonding material (HG) arranged on the surface of the control electrode (TG) is joined only to the surface of the inclined portion facing the control electrode (TG). <EOS>