An infrared detector manufactured from a foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a diode group (142-148; 321, 341, 361; 621, 641) formed on an insulation layer , the insulation layer configured to also function as a heat absorption layer to allow a flip-chip arrangement and containing a titanium layer, and/or a layer having a material with similar physical and chemical properties; a plurality of walls (106-108; 311-314) forming a through well defining a first opening and a second opening opposing the first opening ; and an infrared sensor located within the plurality of walls (106-108) and configured to detect an infrared wave passing through at least one of the first opening or the second opening of the through well , the infrared sensor including: the diode group; a second heat absorption layer cooperating with the insulation layer for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening but without contacting the walls of the through well , and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well and adjacent to the first opening . a diode group (142-148; 321, 341, 361; 621, 641) formed on an insulation layer , the insulation layer configured to also function as a heat absorption layer to allow a flip-chip arrangement and containing a titanium layer, and/or a layer having a material with similar physical and chemical properties; a plurality of walls (106-108; 311-314) forming a through well defining a first opening and a second opening opposing the first opening ; and an infrared sensor located within the plurality of walls (106-108) and configured to detect an infrared wave passing through at least one of the first opening or the second opening of the through well , the infrared sensor including: the diode group; a second heat absorption layer cooperating with the insulation layer for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening but without contacting the walls of the through well , and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well and adjacent to the first opening . a second heat absorption layer cooperating with the insulation layer for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening but without contacting the walls of the through well , and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well and adjacent to the first opening . <EOS>