Method for producing a semiconductor structure comprising the following steps: a) providing a working layer made of a semiconductor material having a free face to be joined, b) providing a carrier substrate made of a semiconductor material having a free face to be joined, c) depositing a film composed of a semiconductor material different from that or those of the working layer and of the carrier substrate , having a thickness of less than 50 nm, on the free face to be joined of the working layer and/or on the free face to be joined of the carrier substrate , d) forming an intermediate structure , comprising directly joining, along a bonding interface extending along a main plane (x,y), the free faces to be joined of the working layer and of the carrier substrate , respectively, the intermediate structure comprising an encapsulated film originating from the one or more film(s) deposited during step c), e) annealing the intermediate structure at a temperature higher than or equal to a critical temperature, so as to bring about segmentation of the encapsulated film and form the semiconductor structure comprising an interface region between the working layer and the carrier substrate , said interface region comprising: - areas of direct contact between the working layer and the carrier substrate , and - agglomerates comprising the semiconductor material of the film , and having a thickness, along an axis (z) normal to the main plane (x,y), of less than or equal to 250 nm; the areas of direct contact and the agglomerates being adjacent in the main plane (x,y). a) providing a working layer made of a semiconductor material having a free face to be joined, b) providing a carrier substrate made of a semiconductor material having a free face to be joined, c) depositing a film composed of a semiconductor material different from that or those of the working layer and of the carrier substrate , having a thickness of less than 50 nm, on the free face to be joined of the working layer and/or on the free face to be joined of the carrier substrate , d) forming an intermediate structure , comprising directly joining, along a bonding interface extending along a main plane (x,y), the free faces to be joined of the working layer and of the carrier substrate , respectively, the intermediate structure comprising an encapsulated film originating from the one or more film(s) deposited during step c), e) annealing the intermediate structure at a temperature higher than or equal to a critical temperature, so as to bring about segmentation of the encapsulated film and form the semiconductor structure comprising an interface region between the working layer and the carrier substrate , said interface region comprising: - areas of direct contact between the working layer and the carrier substrate , and - agglomerates comprising the semiconductor material of the film , and having a thickness, along an axis (z) normal to the main plane (x,y), of less than or equal to 250 nm; the areas of direct contact and the agglomerates being adjacent in the main plane (x,y). - areas of direct contact between the working layer and the carrier substrate , and - agglomerates comprising the semiconductor material of the film , and having a thickness, along an axis (z) normal to the main plane (x,y), of less than or equal to 250 nm; the areas of direct contact and the agglomerates being adjacent in the main plane (x,y). <EOS>