A method of forming a silicon carbide MOS transistor device, comprising: providing a drift layer having a first conductivity type, the drift layer having an upper surface; forming first regions in the drift layer and adjacent the upper surface thereof, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another; forming a body layer on the drift layer including the first regions , the body layer having the second conductivity type; forming spaced apart source regions of the first conductivity type in the body layer above respective ones of the first regions ; forming a vertical conduction region in the body layer between the source regions , the vertical conduction region having the first conductivity type and defining body regions having the second conductivity type in the body layer between the vertical conduction region and respective ones of the source regions ; and forming respective well contact regions through the body layer to the first regions , the well contact regions having the second conductivity type and being more heavily doped than the body layer, wherein the body regions having the second conductivity type have a doping concentration of from about 5x10 16 cm -3 to about 5x10 17 cm -3 and the vertical conduction region having the first conductivity type has a doping concentration of from about 1x10 16 cm -3 to about 1x10 17 cm -3 , wherein the first regions having the second conductivity type are more heavily doped than the body layer, and wherein the first regions are laterally spaced apart by a first distance d1 and the body regions are laterally spaced apart by a second distance d2, wherein d2 is larger than d1. providing a drift layer having a first conductivity type, the drift layer having an upper surface; forming first regions in the drift layer and adjacent the upper surface thereof, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another; forming a body layer on the drift layer including the first regions , the body layer having the second conductivity type; forming spaced apart source regions of the first conductivity type in the body layer above respective ones of the first regions ; forming a vertical conduction region in the body layer between the source regions , the vertical conduction region having the first conductivity type and defining body regions having the second conductivity type in the body layer between the vertical conduction region and respective ones of the source regions ; and forming respective well contact regions through the body layer to the first regions , the well contact regions having the second conductivity type and being more heavily doped than the body layer, wherein the body regions having the second conductivity type have a doping concentration of from about 5x10 16 cm -3 to about 5x10 17 cm -3 and the vertical conduction region having the first conductivity type has a doping concentration of from about 1x10 16 cm -3 to about 1x10 17 cm -3 , wherein the first regions having the second conductivity type are more heavily doped than the body layer, and wherein the first regions are laterally spaced apart by a first distance d1 and the body regions are laterally spaced apart by a second distance d2, wherein d2 is larger than d1. <EOS>