A method of manufacturing an electromechanical device having mechanical structures , an electrical contact and field regions , all overlying a substrate , wherein the mechanical structures and the electrical contact are disposed between the field regions , wherein the field regions are comprised of silicon, germanium, silicon/germanium, silicon carbide or gallium arsenide, and wherein the mechanical structures reside in a sealed chamber , the method comprising: providing a substrate with a first sacrificial layer , an electrical contact and mechanical structures , wherein the electrical contact and the mechanical structures are disposed between field regions , wherein the electrical contact , the mechanical structures and the field regions are all disposed on the first sacrificial layer ; depositing a second sacrificial layer over the mechanical structures , the electrical contact and a portion of each of the field regions , directly covering the mechanical structures , the electrical contact and the portions of the field regions ; forming an opening into the second sacrificial layer , wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact ; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via , wherein the first encapsulation layer consitst of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer ; removing at least a portion of the first and second sacrificial layer to form the chamber ; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer , wherein the second encapsulation layer consists of a semiconductor material and covers the vent . providing a substrate with a first sacrificial layer , an electrical contact and mechanical structures , wherein the electrical contact and the mechanical structures are disposed between field regions , wherein the electrical contact , the mechanical structures and the field regions are all disposed on the first sacrificial layer ; depositing a second sacrificial layer over the mechanical structures , the electrical contact and a portion of each of the field regions , directly covering the mechanical structures , the electrical contact and the portions of the field regions ; forming an opening into the second sacrificial layer , wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact ; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via , wherein the first encapsulation layer consitst of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer ; removing at least a portion of the first and second sacrificial layer to form the chamber ; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer , wherein the second encapsulation layer consists of a semiconductor material and covers the vent . <EOS>