A solar cell comprising: a semiconductor substrate including a base area and a doping area , the base area and the doping area having a first conductivity type dopant, wherein the doping area has a higher dopant concentration as the base a rea; a doping layer provided on the semiconductor substrate , the doping layer having a second conductive type opposite to the first conductivity type, wherein the doping layer and the doping area are provided at one side of the substrate; a tunneling layer interposed between the doping layer and the semiconductor substrate ; an insulating layer provided entirely along the one side of the substrate, on the doping area and on the doping layer; a first electrode provided on the insulating layer and being connected to the doping area ; and a second electrode provided on the insulating layer and connected to the doping layer , wherein the doping area comprises a plurality of doped areas having an island shape and being separated from each other; wherein each of the plurality of doped areas are spaced from the doped layer by a part of the base area ; wherein the first electrode includes a plurality of first portions and a second portion , the plurality of first portions are connected to the plurality of doped areas , and the second portion is configured to connect the first portions to one another; and characterized in that a width of the second portion of the first electrode is smaller than a width of each of the first portions of the first electrode, the insulating layer covers each part of the base area provided between each of the plurality of doped areas and the doped layer. a semiconductor substrate including a base area and a doping area , the base area and the doping area having a first conductivity type dopant, wherein the doping area has a higher dopant concentration as the base a rea; a doping layer provided on the semiconductor substrate , the doping layer having a second conductive type opposite to the first conductivity type, wherein the doping layer and the doping area are provided at one side of the substrate; a tunneling layer interposed between the doping layer and the semiconductor substrate ; an insulating layer provided entirely along the one side of the substrate, on the doping area and on the doping layer; a first electrode provided on the insulating layer and being connected to the doping area ; and a second electrode provided on the insulating layer and connected to the doping layer , wherein the doping area comprises a plurality of doped areas having an island shape and being separated from each other; wherein each of the plurality of doped areas are spaced from the doped layer by a part of the base area ; wherein the first electrode includes a plurality of first portions and a second portion , the plurality of first portions are connected to the plurality of doped areas , and the second portion is configured to connect the first portions to one another; and characterized in that a width of the second portion of the first electrode is smaller than a width of each of the first portions of the first electrode, the insulating layer covers each part of the base area provided between each of the plurality of doped areas and the doped layer. <EOS>