A capacitive touch sensor system comprising: (a) a touch sensor array, TSA, ; (b) an array column driver, ACD, ; (c) a column switching register, CSR, ; (d) a column driving source, CDS, ; (e) an array row sensor, ARS, ; (f) a row switching register, RSR, ; (g) an analog to digital converter, ADC, ; and (h) a computing control device, CCD, ; wherein: said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows ; said VIA comprises capacitance elements interlinking said VIA columns and said VIA rows ; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA ; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said VIA columns ; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said VIA rows ; said ACD is configured to select said IIC within said TSA based on said CSR ; said ACD is configured to electrically drive said selected IIC using said CDS ; said ARS is configured to select said IIR within said TSA based on said RSR ; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of variable impedance elements within said VIA , where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA , a current divider formed between the rows of said VIA , and the state of the impedance element , to produce a sensed current for a given row-column intersection with said VIA ; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure. (a) a touch sensor array, TSA, ; (b) an array column driver, ACD, ; (c) a column switching register, CSR, ; (d) a column driving source, CDS, ; (e) an array row sensor, ARS, ; (f) a row switching register, RSR, ; (g) an analog to digital converter, ADC, ; and (h) a computing control device, CCD, ; said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows ; said VIA comprises capacitance elements interlinking said VIA columns and said VIA rows ; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA ; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said VIA columns ; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said VIA rows ; said ACD is configured to select said IIC within said TSA based on said CSR ; said ACD is configured to electrically drive said selected IIC using said CDS ; said ARS is configured to select said IIR within said TSA based on said RSR ; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of variable impedance elements within said VIA , where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA , a current divider formed between the rows of said VIA , and the state of the impedance element , to produce a sensed current for a given row-column intersection with said VIA ; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure. <EOS>