A bridged solar cell characterized by comprising: a substrate having a front surface (300a1) and a back surface (300a2) and comprising an N-type semiconductor layer and a P-type semiconductor layer; a first set of bus bar electrodes disposed on the front surface (300a1) along a first direction and electrically connected to the N-type semiconductor layer; a second set of bus bar electrodes disposed on the back surface (300a2) along a second direction different from the first direction and electrically connected to the P-type semiconductor layer and thus to the first set of bus bar electrodes via the substrate ; a first insulation film disposed on the back surface (300a2), wherein a portion of the second set of bus bar electrodes is extended onto the first insulation film ; a first welding member disposed on the first insulation film and disposed on the portion of the second set of bus bar electrodes along the first direction to electrically connect the second set of bus bar electrodes ; a third set of bus bar electrodes disposed on the first insulation film along the second direction and spaced apart from the second set of bus bar electrodes so as to be insulated from the substrate ; a second welding member disposed over the first insulation film and disposed on a portion of the third set of bus bar electrodes along the first direction to electrically connect the third set of bus bar electrodes ; and a second insulation film disposed on the first insulation film and covering a portion of the second welding member , wherein a portion of the first welding member is further extended in the second direction onto the second insulation film , and the second insulation film is located between the portion of the first welding member and the portion of the second welding member , so that the first welding member is insulated from the second welding member by the second insulation film . a substrate having a front surface (300a1) and a back surface (300a2) and comprising an N-type semiconductor layer and a P-type semiconductor layer; a first set of bus bar electrodes disposed on the front surface (300a1) along a first direction and electrically connected to the N-type semiconductor layer; a second set of bus bar electrodes disposed on the back surface (300a2) along a second direction different from the first direction and electrically connected to the P-type semiconductor layer and thus to the first set of bus bar electrodes via the substrate ; a first insulation film disposed on the back surface (300a2), wherein a portion of the second set of bus bar electrodes is extended onto the first insulation film ; a first welding member disposed on the first insulation film and disposed on the portion of the second set of bus bar electrodes along the first direction to electrically connect the second set of bus bar electrodes ; a third set of bus bar electrodes disposed on the first insulation film along the second direction and spaced apart from the second set of bus bar electrodes so as to be insulated from the substrate ; a second welding member disposed over the first insulation film and disposed on a portion of the third set of bus bar electrodes along the first direction to electrically connect the third set of bus bar electrodes ; and a second insulation film disposed on the first insulation film and covering a portion of the second welding member , wherein a portion of the first welding member is further extended in the second direction onto the second insulation film , and the second insulation film is located between the portion of the first welding member and the portion of the second welding member , so that the first welding member is insulated from the second welding member by the second insulation film . <EOS>