A laser processing device , comprising: an irradiation device ; and a control device , wherein the irradiation device is configured to sequentially process one or more target layers (L1, ..., L n ) in a workpiece by irradiating the target layers with a pulse laser beam at a predetermined low fluence (FL), and to remove a protrusion generated on a surface of the target layers by irradiating the protrusion with the pulse laser beam at a high fluence (FH) higher than the low fluence (FL), the control device includes a switching unit and a switching condition setting unit , the switching unit is configured to switch the fluence of the pulse laser beam from the irradiation device between the low fluence (FL) and the high fluence (FH) based on a switching condition, the switching condition setting unit is configured to set the switching condition based on a condition of the workpiece , characterized in that the pulse laser beam has pulse width of less than 10 picoseconds, the switching condition setting unit is configured to set the number (NL) of target layers to be processed at the low fluence (FL) and the number (NH) of target layers to be processed at the high fluence (FH) as the switching condition, and the switching unit is configured to switch the pulse laser beam from the low fluence (FL) to the high fluence (FH) based on the number (NL) of the target layers to be processed at the low fluence (FL), and to switch the pulse laser beam from the high fluence (FH) to the low fluence (FL) based on the number (NH) of the target layers to be processed at the high fluence (FH). an irradiation device ; and a control device , wherein the irradiation device is configured to sequentially process one or more target layers (L1, ..., L n ) in a workpiece by irradiating the target layers with a pulse laser beam at a predetermined low fluence (FL), and to remove a protrusion generated on a surface of the target layers by irradiating the protrusion with the pulse laser beam at a high fluence (FH) higher than the low fluence (FL), the control device includes a switching unit and a switching condition setting unit , the switching unit is configured to switch the fluence of the pulse laser beam from the irradiation device between the low fluence (FL) and the high fluence (FH) based on a switching condition, the switching condition setting unit is configured to set the switching condition based on a condition of the workpiece , characterized in that the irradiation device is configured to sequentially process one or more target layers (L1, ..., L n ) in a workpiece by irradiating the target layers with a pulse laser beam at a predetermined low fluence (FL), and to remove a protrusion generated on a surface of the target layers by irradiating the protrusion with the pulse laser beam at a high fluence (FH) higher than the low fluence (FL), the control device includes a switching unit and a switching condition setting unit , the switching unit is configured to switch the fluence of the pulse laser beam from the irradiation device between the low fluence (FL) and the high fluence (FH) based on a switching condition, the switching condition setting unit is configured to set the switching condition based on a condition of the workpiece , the pulse laser beam has pulse width of less than 10 picoseconds, the switching condition setting unit is configured to set the number (NL) of target layers to be processed at the low fluence (FL) and the number (NH) of target layers to be processed at the high fluence (FH) as the switching condition, and the switching unit is configured to switch the pulse laser beam from the low fluence (FL) to the high fluence (FH) based on the number (NL) of the target layers to be processed at the low fluence (FL), and to switch the pulse laser beam from the high fluence (FH) to the low fluence (FL) based on the number (NH) of the target layers to be processed at the high fluence (FH). <EOS>