A method for producing a plasmonic component with a metal-semiconductor-metal contact, in which a first metal layer is separated from a second metal layer different from the first metal layer by a semiconductor layer having a thickness of 100 nm or less, comprising the following steps: - providing a semiconductor layer on a substrate ; - providing an oxide layer at least partially on one of the surfaces of the semiconductor layer ; - applying a structured resist layer at least partially to the surface of the oxide layer opposite the semiconductor layer in such a way that areas with the resist layer and areas without a resist layer are formed and areas with the resist layer correspond to a raw form of the metal-semiconductor-metal contact; - removing the oxide and semiconductor layers in areas without a resist layer, thus forming at least two lateral surfaces of the semiconductor layer ; - subsequently laterally undercutting the oxide layer by isotropic etching, whereby the contour of the metal-semiconductor-metal contact is generated in cross section; and subsequently - applying at least two layers of different metals by angled vapor deposition to the lateral surfaces of the semiconductor layer , thus forming the metal-semiconductor-metal contact, wherein the first metal layer is not in direct contact with the second metal layer , wherein the first metal layer consists of a metal selected from the group consisting of gold, silver and aluminum and their alloys, and the second metal layer consists of a metal selected from the group consisting of titanium, chromium, copper, zirconium, nickel, palladium, platinum, tin, lead and bismuth and their alloys, and wherein the metal layers are selected such that electromagnetic waves are predominantly absorbed in the second metal layer and the metal of the second, highly absorbent metal layer has a lower potential barrier to the semiconductor layer than the metal of the first metal layer . - providing a semiconductor layer on a substrate ; - providing an oxide layer at least partially on one of the surfaces of the semiconductor layer ; - applying a structured resist layer at least partially to the surface of the oxide layer opposite the semiconductor layer in such a way that areas with the resist layer and areas without a resist layer are formed and areas with the resist layer correspond to a raw form of the metal-semiconductor-metal contact; - removing the oxide and semiconductor layers in areas without a resist layer, thus forming at least two lateral surfaces of the semiconductor layer ; - subsequently laterally undercutting the oxide layer by isotropic etching, whereby the contour of the metal-semiconductor-metal contact is generated in cross section; and subsequently - applying at least two layers of different metals by angled vapor deposition to the lateral surfaces of the semiconductor layer , thus forming the metal-semiconductor-metal contact, wherein the first metal layer is not in direct contact with the second metal layer , wherein the first metal layer consists of a metal selected from the group consisting of gold, silver and aluminum and their alloys, and the second metal layer consists of a metal selected from the group consisting of titanium, chromium, copper, zirconium, nickel, palladium, platinum, tin, lead and bismuth and their alloys, and wherein the metal layers are selected such that electromagnetic waves are predominantly absorbed in the second metal layer and the metal of the second, highly absorbent metal layer has a lower potential barrier to the semiconductor layer than the metal of the first metal layer . <EOS>