mhurhangee/patent-ind-claim-en huggingface dataset:
A module for detecting malicious activity in a storage device , whereby the module is provided within a controller of the storage device , the module being configured to: retrieve a first logical block address (LBAO) sent to the controller from a host device and retrieve content at the first LBAO, whereby the retrieved content is used to prime a trained neural network retrieved from a data module provided within the controller ; identify, using content at the first LBAO and the trained neural network, logical block addresses (LBAs) of the storage device that are to be monitored; record instructions received by the controller from the host device and directed to the identified LBAs, and record contents of the identified LBAs; determine, using the trained neural network, if malicious activity is occurring at the storage device based on the recorded instructions and contents, wherein the neural network is trained for different types of operating systems or secondary storage operations based on average read/write/overwrite access of contents at LBAs related to: master boot records, critical records, master file tables, boot sectors, BIOS parameter blocks or extended BIOS parameter blocks of file systems associated with the operating systems or the secondary storage operations. retrieve a first logical block address (LBAO) sent to the controller from a host device and retrieve content at the first LBAO, whereby the retrieved content is used to prime a trained neural network retrieved from a data module provided within the controller ; identify, using content at the first LBAO and the trained neural network, logical block addresses (LBAs) of the storage device that are to be monitored; record instructions received by the controller from the host device and directed to the identified LBAs, and record contents of the identified LBAs; determine, using the trained neural network, if malicious activity is occurring at the storage device based on the recorded instructions and contents, wherein the neural network is trained for different types of operating systems or secondary storage operations based on average read/write/overwrite access of contents at LBAs related to: master boot records, critical records, master file tables, boot sectors, BIOS parameter blocks or extended BIOS parameter blocks of file systems associated with the operating systems or the secondary storage operations.
A method for the electrochemical production of an aprotic ionic liquid of a cation and a halide anion X - , wherein a reaction mixture containing a solvent, a supporting electrolyte, an anion source and a reactant which responds to formula R 1 R 3 -N-(CR 2 ) n -N-R 4 R 5 wherein - R 1 , R 2 ,R 3 , R 4 , R 5 may be the same or different and may, independently of each other be H, a straight chain or a branched saturated alkyl group containing 1 to 20 carbon atoms, a cyclic alkyl group containing 1 to 20 carbon atoms or an aromatic hydrocarbon moiety containing 1 to 20 carbon atoms - At least one CR 2 next to an N is CH 2 - And n is at least 1, preferably at least 2, more preferably maximum 10, most preferably n is 1, 2 or 3 is subjected to an anodic electrochemical potential to cause oxidative electrolysis of the reactant, wherein the supporting electrolyte simultaneously functions as the anion source and comprises a salt of the halide ion X - , selected from the group of fluoride, chloride, bromide or iodide wherein the halide salt is a salt selected from the group of M 2+ X 2 , M 3+ X 3 or a halide salt of an organic protic cation, wherein M 2+ and M 3+ are respectively divalent and trivalent metal cations, wherein the halide X is preferably chloride; wherein a molar ratio of the concentration of the reactant with respect to the halide salt varies between 0.9 and 1.5, preferably between 0.9 and stoichiometric; wherein the reaction mixture further contains a proton scavenger or wherein proton scavenging is achieved by cathodic deprotonation. - R 1 , R 2 ,R 3 , R 4 , R 5 may be the same or different and may, independently of each other be H, a straight chain or a branched saturated alkyl group containing 1 to 20 carbon atoms, a cyclic alkyl group containing 1 to 20 carbon atoms or an aromatic hydrocarbon moiety containing 1 to 20 carbon atoms - At least one CR 2 next to an N is CH 2 - And n is at least 1, preferably at least 2, more preferably maximum 10, most preferably n is 1, 2 or 3 wherein the halide salt is a salt selected from the group of M 2+ X 2 , M 3+ X 3 or a halide salt of an organic protic cation, wherein M 2+ and M 3+ are respectively divalent and trivalent metal cations, wherein the halide X is preferably chloride; wherein a molar ratio of the concentration of the reactant with respect to the halide salt varies between 0.9 and 1.5, preferably between 0.9 and stoichiometric; wherein the reaction mixture further contains a proton scavenger or wherein proton scavenging is achieved by cathodic deprotonation.
A semiconductor structure processing method, wherein the method comprises: forming a mask layer on a substrate ; etching the substrate based on the mask layer to form a semiconductor substrate and discrete feature portions having the mask layer on their top surfaces; ashing a semiconductor structure comprising the semiconductor substrate , the feature portions and the mask layer by using an oxygen-free first mixed gas or by using a second mixed gas which contains oxygen; removing the mask layer ; cleaning the semiconductor structure after removing the mask layer and forming an oxide layer on surfaces of the feature portions during cleaning the semiconductor structure; drying the semiconductor structure, which comprises drying the surfaces of the feature portions by using isopropanol at a first temperature, and supplying deionized water at a second temperature to a back surface of the semiconductor substrate while drying the surfaces of the feature portions ; and removing the oxide layer after drying the semiconductor structure, wherein during drying, one feature portion of at least one group of adjacent feature portions inclines towards another feature portion adjacent thereto, and a distance between said one inclined feature portion and the other feature portion adjacent thereto after drying is smaller than a distance therebetween before drying, performing a compensation treatment of the oxide layer after drying the semiconductor structure and before removing the oxide layer , such that a width of the feature portions is reduced while a thickness of the oxide layer is increased in a horizontal direction. forming a mask layer on a substrate ; etching the substrate based on the mask layer to form a semiconductor substrate and discrete feature portions having the mask layer on their top surfaces; ashing a semiconductor structure comprising the semiconductor substrate , the feature portions and the mask layer by using an oxygen-free first mixed gas or by using a second mixed gas which contains oxygen; removing the mask layer ; cleaning the semiconductor structure after removing the mask layer and forming an oxide layer on surfaces of the feature portions during cleaning the semiconductor structure; drying the semiconductor structure, which comprises drying the surfaces of the feature portions by using isopropanol at a first temperature, and supplying deionized water at a second temperature to a back surface of the semiconductor substrate while drying the surfaces of the feature portions ; and removing the oxide layer after drying the semiconductor structure, wherein during drying, one feature portion of at least one group of adjacent feature portions inclines towards another feature portion adjacent thereto, and a distance between said one inclined feature portion and the other feature portion adjacent thereto after drying is smaller than a distance therebetween before drying, performing a compensation treatment of the oxide layer after drying the semiconductor structure and before removing the oxide layer , such that a width of the feature portions is reduced while a thickness of the oxide layer is increased in a horizontal direction.
A cosmetic composition for making up keratinous tissues, in particular the skin, the lips or the eyes and preferably the skin, comprising, in a physiologically acceptable medium, at least: a) one hydrolysate of Theobroma cacao L beans b) one prebiotic and one probiotic, and c) one or more colouring materials chosen from mineral and/or organic pigments, composite pigments, nacres or pearlescent pigments, and the mixtures thereof. a) one hydrolysate of Theobroma cacao L beans b) one prebiotic and one probiotic, and c) one or more colouring materials chosen from mineral and/or organic pigments, composite pigments, nacres or pearlescent pigments, and the mixtures thereof.
A photovoltaic module comprising a carrier substrate, said carrier substrate carrying a purely printed structure comprising: - a printed positive module terminal, - a printed negative module terminal, and - a plurality of printed photovoltaic cell units each comprising one or more printed photovoltaic cells , wherein the plurality of printed photovoltaic cell units are electrically connected in series between the positive and the negative module terminals such that any two neighbouring photovoltaic cell units are electrically connected by a printed interconnecting electrical conductor , characterised in that the carrier substrate comprises a foil, and wherein the total thickness of the photovoltaic module is below 500 μm and wherein the nominal voltage level between the positive and the negative terminals is at least 5 kV DC, and wherein the foil is of a bendable material having a bend radius below 50 mm. - a printed positive module terminal, - a printed negative module terminal, and - a plurality of printed photovoltaic cell units each comprising one or more printed photovoltaic cells , wherein the plurality of printed photovoltaic cell units are electrically connected in series between the positive and the negative module terminals such that any two neighbouring photovoltaic cell units are electrically connected by a printed interconnecting electrical conductor ,
A femoral sizing jig for use in total arthroplasty of left and right knees, the jig comprising a femoral body , an external-rotation-angle arm which is configured to move relative to the femoral body for setting an external angular rotation of a left or right femur, a cutting-jig location guide which is movable relative to the femoral body , and which is connected to, and is movable in unison with movement of, the external-rotation-angle arm , and a medial posterior-condylar locator which is integrally formed as one piece with the external-rotation-angle arm , characterised in that the medial posterior-condylar locator is configured to move in unison with movement of the external-rotation-angle arm and configured to pivot relative to the femoral body , so as to maintain a fixed relative distance between the medial posterior condylar locator and a medial side of the cutting-jig location guide .
A method for preparing a ferrite-based coating catalyst, the method comprising: mixing a support, a ferrite-based catalyst, a cellulose-based additive, and water, wherein a the content of the cellulose-based additive is 0.5 wt% or less based on a the total weight of the ferrite-based catalyst, wherein the weight ratio of water based on the weight of the support is 0.1 or less, and wherein the ferrite-based catalyst is represented by the following Formula 1: [Formula 1] AFe 2 O 4 in Formula 1, Ais Cu, Ra, Ba, Sr, Ca, Be, Zn, Mg, Mn, Co, or Ni. mixing a support, a ferrite-based catalyst, a cellulose-based additive, and water, wherein a the content of the cellulose-based additive is 0.5 wt% or less based on a the total weight of the ferrite-based catalyst, wherein the weight ratio of water based on the weight of the support is 0.1 or less, and wherein the ferrite-based catalyst is represented by the following Formula 1: [Formula 1] AFe 2 O 4 in Formula 1, Ais Cu, Ra, Ba, Sr, Ca, Be, Zn, Mg, Mn, Co, or Ni.
A thermal latent curing agent comprising one or more polyoxazoline based polymers and one or more curing agents, wherein the curing agents are: (i) physically entrapped in a matrix of the polyoxazoline based polymer, and/or (ii) covalently bonded to the polyoxazoline based polymer irreversibly as a side and/or terminal group, and/or (iii)covalently bonded to the polyoxazoline based polymer reversibly. (i) physically entrapped in a matrix of the polyoxazoline based polymer, and/or (ii) covalently bonded to the polyoxazoline based polymer irreversibly as a side and/or terminal group, and/or (iii)covalently bonded to the polyoxazoline based polymer reversibly.
A charge pump comprising: a first counter having a first control input for receiving a control signal, and an output for providing a first count value, wherein the first count value is incremented in response to the control signal being a first logic state and the first count value is decremented in response to the control signal being a second logic state; a pump stage having a variable capacitor, the variable capacitor having a second control input coupled to the output of the first counter for receiving the first count value, wherein a capacitance value of the variable capacitor is changed in response to the first count value changing, and wherein the capacitance value is for determining a ramp-up rate of an output voltage at an output of the charge pump ; a second counter having an output for providing a second count value; a digital-to-analog converter having an input coupled to the output of the second counter , and an output for providing an analog representation of the second count value; a comparator having a first input coupled to the output of the digital-to-analog converter , a second input coupled to the output of the charge pump , and an output for providing the control signal to the first control input of the first counter ; and a switch coupled between the output of the second counter and the input of the digital-to-analog converter , the switch having a third control input for receiving a first clock signal (C4). a first counter having a first control input for receiving a control signal, and an output for providing a first count value, wherein the first count value is incremented in response to the control signal being a first logic state and the first count value is decremented in response to the control signal being a second logic state; a pump stage having a variable capacitor, the variable capacitor having a second control input coupled to the output of the first counter for receiving the first count value, wherein a capacitance value of the variable capacitor is changed in response to the first count value changing, and wherein the capacitance value is for determining a ramp-up rate of an output voltage at an output of the charge pump ; a second counter having an output for providing a second count value; a digital-to-analog converter having an input coupled to the output of the second counter , and an output for providing an analog representation of the second count value; a comparator having a first input coupled to the output of the digital-to-analog converter , a second input coupled to the output of the charge pump , and an output for providing the control signal to the first control input of the first counter ; and a switch coupled between the output of the second counter and the input of the digital-to-analog converter , the switch having a third control input for receiving a first clock signal (C4).
A process for the manufacture of gamma,delta-unsaturated ketones of the general formula (III) by reacting a tertiary vinyl carbinol of the general formula (I) with an isopropenyl alkyl ether of the general formula (II) in the presence of a catalyst of the general formula (IV), wherein R 1 and R 6 are independently from each other either methyl or ethyl, R 3 is methyl, R 2 is a saturated or unsaturated linear, branched or cyclic hydrocarbyl group with 1 to 46 C atoms, and R 4 and R 5 are independently from each other selected from the group consisting of aralkyl or R 4 and R 5 form together 1,1'-biphenyl-2,2'-diyl. wherein R 1 and R 6 are independently from each other either methyl or ethyl, R 3 is methyl, R 2 is a saturated or unsaturated linear, branched or cyclic hydrocarbyl group with 1 to 46 C atoms, and R 4 and R 5 are independently from each other selected from the group consisting of aralkyl or R 4 and R 5 form together 1,1'-biphenyl-2,2'-diyl.
A thyristor circuit , comprising: at least one branch comprising at least one thyristor ; a thyristor control circuit for selectively triggering the thyristor; a current detector configured to detect a current value representative of an electrical current flowing through the thyristor and to input the detected current value into the thyristor control circuit; wherein the thyristor control circuit is configured to determine a fault condition in which the detected current value exceeds a predetermined current threshold based on a deteriorated blocking ability of the thyristor, and, dependent on the determination result, to trigger the thyristor into a conductive state. at least one branch comprising at least one thyristor ; a thyristor control circuit for selectively triggering the thyristor; a current detector configured to detect a current value representative of an electrical current flowing through the thyristor and to input the detected current value into the thyristor control circuit; wherein the thyristor control circuit is configured to determine a fault condition in which the detected current value exceeds a predetermined current threshold based on a deteriorated blocking ability of the thyristor, and, dependent on the determination result, to trigger the thyristor into a conductive state.
A temperature-compensated measuring probe (MTS) for acquiring measuring values at a workpiece (WS) and for outputting signals which are representative for the measuring values, wherein the measuring probe (MTS) is a measuring probe (MTS) for measurements with or without contact to be accommodated in a workpiece processing machine (WBM) and comprises • a probing means (TE) for the one or multi-dimensional contacting of a workpiece (WS), • at least one contact sensor (ASE) for converting such contacts into signals, • at least one temperature sensor (TS) which is associated with the measuring probe (MTS) and accommodated in the measuring probe (MTS) in order to generate a signal which is representative for the temperature of the measuring probe (MTS), characterised in that • the measuring probe comprises a linkage device (VE) which is adapted to link the signals of the least one contact sensor (ASE) with the signals of the at least one temperature sensor (TS) to a temperature-compensated contact signal (TKAS) and to output the temperature-compensated contact signal (TKAS) of the measuring probe to a numerical control (NC) of the workpiece processing machine (WBM), wherein at least one temperature sensor (TS) is not part of the linkage device (VE). • a probing means (TE) for the one or multi-dimensional contacting of a workpiece (WS), • at least one contact sensor (ASE) for converting such contacts into signals, • at least one temperature sensor (TS) which is associated with the measuring probe (MTS) and accommodated in the measuring probe (MTS) in order to generate a signal which is representative for the temperature of the measuring probe (MTS), • the measuring probe comprises a linkage device (VE) which is adapted to link the signals of the least one contact sensor (ASE) with the signals of the at least one temperature sensor (TS) to a temperature-compensated contact signal (TKAS) and to output the temperature-compensated contact signal (TKAS) of the measuring probe to a numerical control (NC) of the workpiece processing machine (WBM), wherein at least one temperature sensor (TS) is not part of the linkage device (VE).
An injectable formulation of paracetamol comprising: 250 mg/ml paracetamol in a solvent system comprising (a) less than or equal to 40% w/v glycofurol, (b) less than or equal to 30% w/v lower chain alcohol selected from the group comprising ethyl alcohol, iso-propyl alcohol, or mixture thereof, (c) 2% to 4% w/v stabilizer selected from Plasdone C 17, Plasdone C 30 or its combination thereof, (d) optionally another solvent selected from N-methyl pyrrolidone, cyclodextrin, dimethylacetamide, transcutol, or mixtures thereof; and (e) water to make up the volume of the formulation. (a) less than or equal to 40% w/v glycofurol, (b) less than or equal to 30% w/v lower chain alcohol selected from the group comprising ethyl alcohol, iso-propyl alcohol, or mixture thereof, (c) 2% to 4% w/v stabilizer selected from Plasdone C 17, Plasdone C 30 or its combination thereof, (d) optionally another solvent selected from N-methyl pyrrolidone, cyclodextrin, dimethylacetamide, transcutol, or mixtures thereof; and (e) water to make up the volume of the formulation.
An encoding device comprising: an encoding circuit configured to encode video data according to a coding standard such as High Efficiency Video Coding, HEVC, standard and a second opto-electrical transfer function, OETF, an intensity of light within a second range being input into the second OETF; and a storage to store: video usability information, VUI, including a first value indicating a first OETF; and supplemental enhancement information, SEI, including a second value indicating the second OETF, wherein VIII and SEI are included in the video data; wherein the first OETF supports a first range of an input intensity of light and the second range is wider than the first range; the first value is to be referred to by a decoding device that does not support the second OETF, when the decoding device decodes the video data; and the second OETF has compatibility with the first OETF; wherein the first OETF is an OETF defined in one of BT. 709 and BT. 2020; and the SEI is in an IRAP NAL unit or an I-picture. an encoding circuit configured to encode video data according to a coding standard such as High Efficiency Video Coding, HEVC, standard and a second opto-electrical transfer function, OETF, an intensity of light within a second range being input into the second OETF; and a storage to store: video usability information, VUI, including a first value indicating a first OETF; and supplemental enhancement information, SEI, including a second value indicating the second OETF, wherein VIII and SEI are included in the video data; wherein the first OETF supports a first range of an input intensity of light and the second range is wider than the first range; the first value is to be referred to by a decoding device that does not support the second OETF, when the decoding device decodes the video data; and the second OETF has compatibility with the first OETF; wherein the first OETF is an OETF defined in one of BT. 709 and BT. 2020; and the SEI is in an IRAP NAL unit or an I-picture. video usability information, VUI, including a first value indicating a first OETF; and supplemental enhancement information, SEI, including a second value indicating the second OETF, wherein VIII and SEI are included in the video data; wherein the first OETF supports a first range of an input intensity of light and the second range is wider than the first range; the first value is to be referred to by a decoding device that does not support the second OETF, when the decoding device decodes the video data; and the second OETF has compatibility with the first OETF; wherein the first OETF is an OETF defined in one of BT. 709 and BT. 2020; and the SEI is in an IRAP NAL unit or an I-picture.