Stack-shaped III-V semiconductor diode , comprising - an n - layer with a first surface (14.1), a second surface (14.2) opposite the first surface, a doping substance concentration (K2) of 10 12 - 10 17 N/cm 3 and a layer thickness (D2) of 50 - 1,000 μm, - a p + layer , which has a doping substance concentration (K1) of 5.10 18 - 5.10 20 N/cm 3 , wherein either the p + layer is connected by material couple with the first surface (14.1) of the n - layer or a p - intermediate layer is arranged between the n - layer and the p + layer, - an n + layer , which is connected with the second surface (14.2) of the n - layer by material couple, with a doping substance concentration (K3) of at least 10 19 N/cm 3 , wherein - the p + layer , the n - layer and the n + layer are each of monolithic construction and each comprise a GaAs compound or consist of a GaAs compound and - the n + layer or the p + layer is constructed as a substrate layer, - the doping substance concentration (K2) of the n - layer at the first surface (14.1), which is formed in the direction of the p + layer , has a first value (W1) and at the second surface (14.2), which adjoins the n + layer , has a second value (W2), wherein - the second value (W2) of the doping substance concentration (K2) is larger than the first value (W1) by at least a factor of 1.5 or by at least a factor of 2 or by at least a factor of 2.5, - the doping substance concentration (K2) of the n' layer has a constant course from the first layer (W1) to the second layer (W2) parallel to the layer thickness (D2) of the n - layer , wherein the constant course has a constant gradient. - an n - layer with a first surface (14.1), a second surface (14.2) opposite the first surface, a doping substance concentration (K2) of 10 12 - 10 17 N/cm 3 and a layer thickness (D2) of 50 - 1,000 μm, - a p + layer , which has a doping substance concentration (K1) of 5.10 18 - 5.10 20 N/cm 3 , wherein either the p + layer is connected by material couple with the first surface (14.1) of the n - layer or a p - intermediate layer is arranged between the n - layer and the p + layer, - an n + layer , which is connected with the second surface (14.2) of the n - layer by material couple, with a doping substance concentration (K3) of at least 10 19 N/cm 3 , wherein - the p + layer , the n - layer and the n + layer are each of monolithic construction and each comprise a GaAs compound or consist of a GaAs compound and - the n + layer or the p + layer is constructed as a substrate layer, - the doping substance concentration (K2) of the n - layer at the first surface (14.1), which is formed in the direction of the p + layer , has a first value (W1) and at the second surface (14.2), which adjoins the n + layer , has a second value (W2), wherein - the second value (W2) of the doping substance concentration (K2) is larger than the first value (W1) by at least a factor of 1.5 or by at least a factor of 2 or by at least a factor of 2.5, - the doping substance concentration (K2) of the n' layer has a constant course from the first layer (W1) to the second layer (W2) parallel to the layer thickness (D2) of the n - layer , wherein the constant course has a constant gradient. <EOS>