An x-ray emitting device comprising: an x-ray emitting construct , an electron emitting construct and at least one spacer situated such the x-ray emitting construct and the electron emitting construct face each other, and that an evacuated inner gap is present between said x-ray emitting construct and said electron emitting construct ; said x-ray emitting construct comprising an anode ; and said electron emitting construct further comprising at least one active zone , each active zone comprising at least one active area being of an area between 100 square microns and 4 square millimeters, the at least one active area comprising: • a cathode ; • a gated cone electron source , comprising a plurality of emitter tips arranged in an array and configured to emit an electron beam towards the x-ray emitting construct ; • a gate electrode comprising a plurality of gate holes , the position of at least one of said gate holes corresponding to the position of at least one of said emitter tips ; characterized by a resistive layer situated between the gated cone electron source and the cathode , wherein said resistive layer comprises Si(x)C(y)N(z), and further comprises a barrier sublayer situated at an interface with the gated cone electron source, and wherein said barrier sublayer comprises carbon-rich or nitrogen-rich Si(x)C(y)N(z) that has a higher y-value or a higher z-value than the Si(x)C(y)N(z) utilized in the resistive layer . an x-ray emitting construct , an electron emitting construct and at least one spacer situated such the x-ray emitting construct and the electron emitting construct face each other, and that an evacuated inner gap is present between said x-ray emitting construct and said electron emitting construct ; said x-ray emitting construct comprising an anode ; and said electron emitting construct further comprising at least one active zone , each active zone comprising at least one active area being of an area between 100 square microns and 4 square millimeters, the at least one active area comprising: • a cathode ; • a gated cone electron source , comprising a plurality of emitter tips arranged in an array and configured to emit an electron beam towards the x-ray emitting construct ; • a gate electrode comprising a plurality of gate holes , the position of at least one of said gate holes corresponding to the position of at least one of said emitter tips ; • a cathode ; • a gated cone electron source , comprising a plurality of emitter tips arranged in an array and configured to emit an electron beam towards the x-ray emitting construct ; • a gate electrode comprising a plurality of gate holes , the position of at least one of said gate holes corresponding to the position of at least one of said emitter tips ; characterized by a resistive layer situated between the gated cone electron source and the cathode , wherein said resistive layer comprises Si(x)C(y)N(z), and further comprises a barrier sublayer situated at an interface with the gated cone electron source, and wherein said barrier sublayer comprises carbon-rich or nitrogen-rich Si(x)C(y)N(z) that has a higher y-value or a higher z-value than the Si(x)C(y)N(z) utilized in the resistive layer . <EOS>