A device comprising: a temperature sensing circuit; a first fin field-effect transistor, finFET, comprising: a first source contact ; a first drain contact ; a first gate contact ; and a first body contact electrically coupled to the temperature sensing circuit, wherein the first body contact responsive to a first current provides a first voltage proportional to a first temperature to the temperature sensing circuit, characterized in that the first source contact, the first drain contact, and the first body contact are formed in a first well of the first finFET, wherein a first current source with a first fin dimension, a first channel dimension or both provides the first current; and a second fin field effect transistor, finFET, comprising: a second source contact ; a second drain contact ; a second gate contact ; and a second body contact electrically coupled to the temperature sensing circuit, wherein the first source, drain and gate contacts of the first finFET are connected to the second source, drain and gate contacts of the second finFET, wherein the second body contact responsive to a second current provides a second voltage proportional to a second temperature to the temperature sensing circuit, wherein a second current source with a second fin dimension, a second channel dimension or both distinct from the first fin dimension and/or first channel dimension respectively provides the second current, wherein the second source contact, the second drain contact and the second body contact are formed in a second well of the second finFET, and wherein the temperature sensing circuit generates an output voltage based on a difference between the first voltage and the second voltage. a first source contact ; a first drain contact ; a first gate contact ; and a first body contact electrically coupled to the temperature sensing circuit, wherein the first body contact responsive to a first current provides a first voltage proportional to a first temperature to the temperature sensing circuit, characterized in that the first source contact, the first drain contact, and the first body contact are formed in a first well of the first finFET, wherein a first current source with a first fin dimension, a first channel dimension or both provides the first current; and a second source contact ; a second drain contact ; a second gate contact ; and a second body contact electrically coupled to the temperature sensing circuit, wherein the first source, drain and gate contacts of the first finFET are connected to the second source, drain and gate contacts of the second finFET, wherein the second body contact responsive to a second current provides a second voltage proportional to a second temperature to the temperature sensing circuit, wherein a second current source with a second fin dimension, a second channel dimension or both distinct from the first fin dimension and/or first channel dimension respectively provides the second current, wherein the second source contact, the second drain contact and the second body contact are formed in a second well of the second finFET, and wherein the temperature sensing circuit generates an output voltage based on a difference between the first voltage and the second voltage. <EOS>