A storage device , comprising: a plurality of nonvolatile memory devices provided on a printed circuit board, hereinafter referred to as PCB; a connector provided in the PCB, the connector comprising a plurality of connection terminals ; a storage controller provided on the PCB, the storage controller being configured to communicate with an external host through the plurality of connection terminals and control the plurality of nonvolatile memory devices; at least one first passive filter provided in the PCB and connected between the connector and the storage controller, the at least one first passive filter being configured to perform an equalization on any one or any combination of a signal provided to the storage controller and a signal provided from the storage controller; the at least one first passive filter comprises a filter resistor (Rf) and a filter capacitor (Cf) connected in parallel between a first node (N21) and a second node (N22); the filter resistor and the filter capacitor are provided in the PCB; the first node is connected to the storage controller and the second node is connected to the connector; wherein the filter capacitor comprises a first pad and a second pad , the first pad being connected to the connector in the PCB, and the second pad being spaced apart from the first pad in a vertical direction (D3) from an upper surface (UF) of the PCB to a lower surface (BF) of the PCB; and the filter resistor comprises a vertical conductive pattern that connects the first pad and the second pad in the vertical direction; and the second pad is connected to the storage controller through a conductive pattern . a plurality of nonvolatile memory devices provided on a printed circuit board, hereinafter referred to as PCB; a connector provided in the PCB, the connector comprising a plurality of connection terminals ; a storage controller provided on the PCB, the storage controller being configured to communicate with an external host through the plurality of connection terminals and control the plurality of nonvolatile memory devices; at least one first passive filter provided in the PCB and connected between the connector and the storage controller, the at least one first passive filter being configured to perform an equalization on any one or any combination of a signal provided to the storage controller and a signal provided from the storage controller; the at least one first passive filter comprises a filter resistor (Rf) and a filter capacitor (Cf) connected in parallel between a first node (N21) and a second node (N22); the filter resistor and the filter capacitor are provided in the PCB; the first node is connected to the storage controller and the second node is connected to the connector; wherein the filter capacitor comprises a first pad and a second pad , the first pad being connected to the connector in the PCB, and the second pad being spaced apart from the first pad in a vertical direction (D3) from an upper surface (UF) of the PCB to a lower surface (BF) of the PCB; and the filter resistor comprises a vertical conductive pattern that connects the first pad and the second pad in the vertical direction; and the second pad is connected to the storage controller through a conductive pattern . <EOS>