A display device comprising: a first substrate ; first through third subpixel electrodes (SPE1, SPE2, SPE3) which are disposed on the first substrate to neighbor each other; a second substrate which is opposite the first substrate ; a liquid crystal layer which is between the first substrate and the second substrate; wavelength conversion patterns (WC) which are disposed on the second substrate and comprise a first wavelength conversion pattern (WC1) at least partially overlapping the first subpixel electrode (SPE1) and a second wavelength conversion pattern (WC2) at least partially overlapping the second subpixel electrode (SPE2); light transmission patterns (TC) which comprise a first light transmission pattern (TC1) at least partially overlapping the third subpixel electrode (SPE3) and a second light transmission pattern (TC2) disposed between the first wavelength conversion pattern (WC1) and the second wavelength conversion pattern (WC2); a planarization layer which is disposed on the wavelength conversion patterns (WC) and the light transmission patterns (TC); and low refractive layers which have a lower refractive index than the wavelength conversion patterns (WC), wherein the low refractive layers comprise at least one of a first low refractive layer disposed between the wavelength conversion patterns (WC) and the second substrate and a second low refractive layer disposed between the wavelength conversion patterns (WC) and the planarization layer , wherein at least one of the first low refractive layer and the second low refractive layer comprises one of zinc oxide (ZnO), titanium dioxide (TiO2), hollow silica, nano silicate, and porogen. a first substrate ; first through third subpixel electrodes (SPE1, SPE2, SPE3) which are disposed on the first substrate to neighbor each other; a second substrate which is opposite the first substrate ; a liquid crystal layer which is between the first substrate and the second substrate; wavelength conversion patterns (WC) which are disposed on the second substrate and comprise a first wavelength conversion pattern (WC1) at least partially overlapping the first subpixel electrode (SPE1) and a second wavelength conversion pattern (WC2) at least partially overlapping the second subpixel electrode (SPE2); light transmission patterns (TC) which comprise a first light transmission pattern (TC1) at least partially overlapping the third subpixel electrode (SPE3) and a second light transmission pattern (TC2) disposed between the first wavelength conversion pattern (WC1) and the second wavelength conversion pattern (WC2); a planarization layer which is disposed on the wavelength conversion patterns (WC) and the light transmission patterns (TC); and low refractive layers which have a lower refractive index than the wavelength conversion patterns (WC), wherein the low refractive layers comprise at least one of a first low refractive layer disposed between the wavelength conversion patterns (WC) and the second substrate and a second low refractive layer disposed between the wavelength conversion patterns (WC) and the planarization layer , wherein at least one of the first low refractive layer and the second low refractive layer comprises one of zinc oxide (ZnO), titanium dioxide (TiO2), hollow silica, nano silicate, and porogen. <EOS>