mhurhangee/patent-ind-claim-en huggingface dataset:
A polymer electrolyte membrane comprising: a non-crosslinked ion conductor; and a porous support having a plurality of pores filled with the ion conductor, wherein the porous support comprises a polymer having at least one crosslinking functional group, the ion conductor is a fluorine-based ion conductor, a hydrocarbon-based ion conductor, or a mixture thereof and the crosslinking functional group is selected from the group consisting of a hydroxyl group (-OH), a carboxyl group (-COOH), and an amine group (-NH 2 ) such that the crosslinking functional group is capable of being bonded to the ion conductor upon occurrence of degradation of the ion conductor to thereby cause the degraded ion conductor to be crosslinked, and the polymer is a polyphenylene sulfide copolymer substituted with the crosslinking functional group, which includes a first repeating unit having the crosslinking functional group and a second repeating unit not having the crosslinking functional group and is represented by Formula 2 below: wherein (i) R 1 , R 2 , R 3 and R 4 are each independently a hydrogen atom, a hydroxyl group (-OH), a carboxyl group (-COOH), or an amine group (-NH 2 ), (ii) at least one of R 1 , R 2 , R 3 and R 4 is not a hydrogen atom, (iii) m is number of the first repeating unit, (iv) n is number of the second repeating unit, and (v) a ratio of the number of the first repeating unit to the number of the second repeating unit (m:n) is 1:99 to 50:50. a non-crosslinked ion conductor; and a porous support having a plurality of pores filled with the ion conductor, wherein the porous support comprises a polymer having at least one crosslinking functional group, the ion conductor is a fluorine-based ion conductor, a hydrocarbon-based ion conductor, or a mixture thereof and the crosslinking functional group is selected from the group consisting of a hydroxyl group (-OH), a carboxyl group (-COOH), and an amine group (-NH 2 ) such that the crosslinking functional group is capable of being bonded to the ion conductor upon occurrence of degradation of the ion conductor to thereby cause the degraded ion conductor to be crosslinked, and the polymer is a polyphenylene sulfide copolymer substituted with the crosslinking functional group, which includes a first repeating unit having the crosslinking functional group and a second repeating unit not having the crosslinking functional group and is represented by Formula 2 below:
A modulator for a digital amplifier , wherein the modulator comprises: a pulse shaper and a control unit for controlling the pulse shaper ; the pulse shaper comprising a clock input and a control input , wherein the pulse shaper is adapted to convert an input signal applied to an input of the control unit into a bit stream configured for a digital amplifier , which encodes per clock of a clock signal applied to the clock input an amplitude value of the input signal applied to the input of the control unit , wherein the pulse shaper can represent a respective amplitude value of the input signal with different bit patterns and the respective bit pattern used by the pulse shaper is determined by the control unit by means of a corresponding, associated control command applied to the control input of the pulse shaper , wherein an assignment of the control commands to associated amplitude values resulting from amplification of the associated bit patterns with the digital amplifier is stored and provided in the control unit , wherein the control unit selects a control command per clock by means of the assignment and the respective amplitude value of the input signal and controls the pulse shaper accordingly, wherein the modulator further comprises an amplitude modulator , wherein the amplitude modulator is adapted to encode the amplitude value of the input signal and to provide it to the control unit , wherein the control unit is further adapted to use the encoded signal to determine the bit patterns to be generated, wherein the amplitude modulator is adapted to encode the amplitude value of the input signal using the resulting amplitude value which is associated with a previously used bit pattern.
A computer implemented method of updating a MES database to include a MES entity corresponding to plant equipment modeled by a corresponding SCADA system object, wherein a SCADA system includes at least a utilization capability object , UCO, which has configurable attributes, wherein the attributes include a set of raw reason codes, wherein the raw reason codes describe the states of the attribute, wherein the UCO is used for synchronization of the SCADA system and a MES, wherein the SCADA system further includes the SCADA system object, which models the plant equipment, wherein the MES comprises the MES database , and wherein the SCADA system and MES define a SCADA/MES system, which comprises an entity model builder , wherein the method comprises the steps: - providing the UCO , wherein the UCO comprises an executable, - executing the executable of the UCO to apply collected status data for the SCADA system object to a set of logical expressions associated with a set of raw reason codes to render a current raw reason code for the UCO , and wherein at runtime the logical expression associated with each configured raw reason code in the UCO is evaluated to determine the current raw reason code for corresponding plant equipment; - providing a user the possibility of defining the contents of the raw reason codes via a user interface; - generating an entity element in the MES database by the entity model builder by reading the attributes contained in the UCO , - using the MES database for a MES application for tracking the status of the plant equipment. - providing the UCO , wherein the UCO comprises an executable, - executing the executable of the UCO to apply collected status data for the SCADA system object to a set of logical expressions associated with a set of raw reason codes to render a current raw reason code for the UCO , and wherein at runtime the logical expression associated with each configured raw reason code in the UCO is evaluated to determine the current raw reason code for corresponding plant equipment; - providing a user the possibility of defining the contents of the raw reason codes via a user interface; - generating an entity element in the MES database by the entity model builder by reading the attributes contained in the UCO , - using the MES database for a MES application for tracking the status of the plant equipment.
Membrane structure comprising: - a substrate having a main surface and a rear surface , - a plurality of pillars , the pillars being arranged on the main surface of the substrate and having a support area facing away from the main surface of the substrate , and - a thin-film structure arranged above the main surface of the substrate and the pillars , the thin-film structure forming a membrane, wherein - the thin film structure comprises a plurality of raised portions that are spaced further from the substrate than at least one lower portion of the thin film structure, - the raised portions each comprise at least one protruding portion , the protruding portions being hollow and having a bottom part and a sidewall and the protruding portions extending towards the substrate , - the bottom part of each protruding portion is mechanically connected to the support area of one of the pillars , respectively, and - a back-volume is formed by the volume between the main surface of the substrate and the thin-film structure , characterized in that the pillars and the protruding portions of the thin-film structure are arranged at a predetermined distance to an outer edge of the thin-film structure , and in that each pair of pillars and protruding portions forms a mechanical phase shifter during membrane deflection, wherein the mechanical phase shifter provides a phase shift of 180 degrees between an outer part and a center part of the membrane. - a substrate having a main surface and a rear surface , - a plurality of pillars , the pillars being arranged on the main surface of the substrate and having a support area facing away from the main surface of the substrate , and - a thin-film structure arranged above the main surface of the substrate and the pillars , the thin-film structure forming a membrane, wherein - the thin film structure comprises a plurality of raised portions that are spaced further from the substrate than at least one lower portion of the thin film structure, - the raised portions each comprise at least one protruding portion , the protruding portions being hollow and having a bottom part and a sidewall and the protruding portions extending towards the substrate , - the bottom part of each protruding portion is mechanically connected to the support area of one of the pillars , respectively, and - a back-volume is formed by the volume between the main surface of the substrate and the thin-film structure , the pillars and the protruding portions of the thin-film structure are arranged at a predetermined distance to an outer edge of the thin-film structure , and in that each pair of pillars and protruding portions forms a mechanical phase shifter during membrane deflection, wherein the mechanical phase shifter provides a phase shift of 180 degrees between an outer part and a center part of the membrane.
A system for tethering a subsea blowout preventer (BOP) , the system comprising: an anchor disposed about the subsea BOP; a flexible tension member , wherein the flexible tension member has a first end including a releasable connector engaged to the anchor, wherein the flexible tension member extends horizontally and vertically from the first end to a second end to impart a lateral preload and a vertical preload to the subsea BOP; characterized in that the system comprises: a gripping system mounted on the subsea BOP, wherein the gripping system is configured to selectively engage the flexible tension member to prevent pay out of the flexible tension member; and further comprises a spool coupled to the second end of the flexible tension member; and a hydraulic cylinder coupled to the gripping system, wherein actuation of the hydraulic cylinder causes paying in or out the flexible tension member. an anchor disposed about the subsea BOP; a flexible tension member , wherein the flexible tension member has a first end including a releasable connector engaged to the anchor, wherein the flexible tension member extends horizontally and vertically from the first end to a second end to impart a lateral preload and a vertical preload to the subsea BOP; characterized in that the system comprises: a gripping system mounted on the subsea BOP, wherein the gripping system is configured to selectively engage the flexible tension member to prevent pay out of the flexible tension member; and further comprises a spool coupled to the second end of the flexible tension member; and a hydraulic cylinder coupled to the gripping system, wherein actuation of the hydraulic cylinder causes paying in or out the flexible tension member. a gripping system mounted on the subsea BOP, wherein the gripping system is configured to selectively engage the flexible tension member to prevent pay out of the flexible tension member; and further comprises a spool coupled to the second end of the flexible tension member; and a hydraulic cylinder coupled to the gripping system, wherein actuation of the hydraulic cylinder causes paying in or out the flexible tension member.
A method, comprising: providing a first structure having: (A) a first silicon layer ; a first silicon dioxide insulating layer over the first silicon layer ; and an Al 2 O 3 etch stop layer disposed between the first silicon dioxide insulating layer and the first silicon layer; providing a second structure having: (B) a second silicon layer ; and a second silicon dioxide insulating layer over the second silicon layer ; bonding the first silicon dioxide insulating layer to the second insulating layer ; polishing an upper surface of the first silicon layer to reduce its thickness; growing a III-V layer on the upper surface of the thinned first silicon layer ; forming a III-V device in the III-V layer , a strip conductor connected to the formed device , and conductive vias through both the III-V layer and the first silicon layer , wherein the conductive vias stop at the interface of the first silicon layer and the Al 2 O 3 etch stop layer ; successively removing the second silicon layer , the second silicon dioxide insulating layer , and the first silicon dioxide insulating layer and the Al 2 O 3 etch stop layer to expose a bottom surface of the first silicon layer ; and forming a ground plane conductor on the exposed bottom surface of the first silicon layer , the strip conductor and the ground plane conductor providing a microstrip transmission line. providing a first structure having: (A) a first silicon layer ; a first silicon dioxide insulating layer over the first silicon layer ; and an Al 2 O 3 etch stop layer disposed between the first silicon dioxide insulating layer and the first silicon layer; providing a second structure having: (B) a second silicon layer ; and a second silicon dioxide insulating layer over the second silicon layer ; (A) a first silicon layer ; a first silicon dioxide insulating layer over the first silicon layer ; and an Al 2 O 3 etch stop layer disposed between the first silicon dioxide insulating layer and the first silicon layer; providing a second structure having: (B) a second silicon layer ; and a second silicon dioxide insulating layer over the second silicon layer ; bonding the first silicon dioxide insulating layer to the second insulating layer ; polishing an upper surface of the first silicon layer to reduce its thickness; growing a III-V layer on the upper surface of the thinned first silicon layer ; forming a III-V device in the III-V layer , a strip conductor connected to the formed device , and conductive vias through both the III-V layer and the first silicon layer , wherein the conductive vias stop at the interface of the first silicon layer and the Al 2 O 3 etch stop layer ; successively removing the second silicon layer , the second silicon dioxide insulating layer , and the first silicon dioxide insulating layer and the Al 2 O 3 etch stop layer to expose a bottom surface of the first silicon layer ; and forming a ground plane conductor on the exposed bottom surface of the first silicon layer , the strip conductor and the ground plane conductor providing a microstrip transmission line.
A process for purifying boron nitride nanotube (BNNT) material to remove impurities, the process comprising: heating the BNNT material at a first temperature for a first duration to remove boron impurities; heating the BNNT material at a second temperature greater than the first temperature for a second duration to remove boron nitride impurities; and heating the BNNT material at a third temperature less than the second temperature for a third duration to remove boron oxide impurities. heating the BNNT material at a first temperature for a first duration to remove boron impurities; heating the BNNT material at a second temperature greater than the first temperature for a second duration to remove boron nitride impurities; and heating the BNNT material at a third temperature less than the second temperature for a third duration to remove boron oxide impurities.
A system for decoding an audio signal, the system comprising: a core decoder for decoding a low frequency component of the audio signal; an analysis filter bank for providing a plurality of analysis subband signals of the low frequency component of the audio signal; a subband selection reception unit for receiving information associated with a fundamental frequency Ω of the audio signal, and for selecting, in response to the information, a first and a second analysis subband signal from the plurality of analysis subband signals, from which a synthesis subband signal is generated; a non-linear processing unit to generate the synthesis subband signal with a synthesis frequency, a magnitude and a phase by: determining the magnitude of the synthesis subband signal from a geometric mean value of the magnitudes of the first and the second analysis subband signals modified by a gain parameter, and determining the phase of the synthesis subband signal from a weighted sum of the phases of the first and the second analysis subband signals; and a synthesis filter bank for generating a high frequency component of the audio signal from the synthesis subband signal; wherein the information associated with a fundamental frequency Ω of the audio signal is received in an encoded bit stream. a core decoder for decoding a low frequency component of the audio signal; an analysis filter bank for providing a plurality of analysis subband signals of the low frequency component of the audio signal; a subband selection reception unit for receiving information associated with a fundamental frequency Ω of the audio signal, and for selecting, in response to the information, a first and a second analysis subband signal from the plurality of analysis subband signals, from which a synthesis subband signal is generated; a non-linear processing unit to generate the synthesis subband signal with a synthesis frequency, a magnitude and a phase by: determining the magnitude of the synthesis subband signal from a geometric mean value of the magnitudes of the first and the second analysis subband signals modified by a gain parameter, and determining the phase of the synthesis subband signal from a weighted sum of the phases of the first and the second analysis subband signals; and determining the magnitude of the synthesis subband signal from a geometric mean value of the magnitudes of the first and the second analysis subband signals modified by a gain parameter, and determining the phase of the synthesis subband signal from a weighted sum of the phases of the first and the second analysis subband signals; and a synthesis filter bank for generating a high frequency component of the audio signal from the synthesis subband signal; wherein the information associated with a fundamental frequency Ω of the audio signal is received in an encoded bit stream.
A complex for correcting a mutation in the genome of a cell comprising a. a guide RNA (gRNA) comprising a first nucleotide sequence that is capable of hybridizing to a target DNA in the genome of a cell, wherein the target DNA comprises a mutation, and a second nucleotide sequence that is capable of interacting with a site-directed nuclease; b. a recombinant site-directed nuclease linked to a superpositively charged protein, wherein the site-directed nuclease comprises an RNA-binding portion that is capable of interacting with the second nucleotide sequence of the guide RNA and wherein the site-directed nuclease is capable of specifically binding and cleaving the target DNA to create a double stranded break; and c. a single-stranded donor oligonucleotide (ssODN) that is capable of hybridizing to a genomic sequence flanking the double stranded break in the target DNA and is capable of integrating into the target DNA to correct a mutation in the target DNA. a. a guide RNA (gRNA) comprising a first nucleotide sequence that is capable of hybridizing to a target DNA in the genome of a cell, wherein the target DNA comprises a mutation, and a second nucleotide sequence that is capable of interacting with a site-directed nuclease; b. a recombinant site-directed nuclease linked to a superpositively charged protein, wherein the site-directed nuclease comprises an RNA-binding portion that is capable of interacting with the second nucleotide sequence of the guide RNA and wherein the site-directed nuclease is capable of specifically binding and cleaving the target DNA to create a double stranded break; and c. a single-stranded donor oligonucleotide (ssODN) that is capable of hybridizing to a genomic sequence flanking the double stranded break in the target DNA and is capable of integrating into the target DNA to correct a mutation in the target DNA.
A low profile mobile asymmetric-aperture antenna configured to communicate with a target geosynchronous satellite comprising: a radiating surface comprising a planar array of radiating elements (930a-933b, 1030-1035, 1130-1133), the radiating surface being configured to radiate a beam pattern , wherein the beam pattern has a narrow-beamwidth axis and a wide-beamwidth axis , wherein the antenna is configured to radiate the beam pattern from the radiating surface as an offset radiated beam at an offset from a perpendicular of the radiating surface in a narrow-beamwidth axis direction; and a mechanical gimbal coupled to the radiating surface, the mechanical gimbal comprising a mechanical azimuth adjustment and a mechanical elevation adjustment configured to adjust a position of the radiating surface, wherein the planar array of radiating elements and the mechanical gimbal are configured to direct the offset radiated beam to the target satellite from a first global location, the offset radiated beam thereby forming a greater skew angle relative to a geosynchronous arc compared to a skew angle that would be formed relative to the geosynchronous arc if the antenna were to direct a non-offset radiated beam to the target satellite from the first global location. a radiating surface comprising a planar array of radiating elements (930a-933b, 1030-1035, 1130-1133), the radiating surface being configured to radiate a beam pattern , wherein the beam pattern has a narrow-beamwidth axis and a wide-beamwidth axis , wherein the antenna is configured to radiate the beam pattern from the radiating surface as an offset radiated beam at an offset from a perpendicular of the radiating surface in a narrow-beamwidth axis direction; and a mechanical gimbal coupled to the radiating surface, the mechanical gimbal comprising a mechanical azimuth adjustment and a mechanical elevation adjustment configured to adjust a position of the radiating surface, wherein the planar array of radiating elements and the mechanical gimbal are configured to direct the offset radiated beam to the target satellite from a first global location, the offset radiated beam thereby forming a greater skew angle relative to a geosynchronous arc compared to a skew angle that would be formed relative to the geosynchronous arc if the antenna were to direct a non-offset radiated beam to the target satellite from the first global location.