A method of forming an insulated metal substrate (IMS) for a power electronic device, comprising: partially etching a first surface of a copper layer to form a pattern comprising a first thickness and a second thickness greater than the first thickness , the first thickness and the second thickness both measured perpendicular to a second surface of the copper layer opposite the first surface of the copper layer , the partial etching being made using photoresist ; after removing the photoresist , laminating the first surface of the copper layer with a second surface of a dielectric layer , the dielectric layer coupled to a metallic baseplate at a first surface of the dielectric layer opposite the second surface of the dielectric layer and at a second surface of the metallic baseplate ; and forming traces in the copper layer by etching through the copper layer at the first thickness and etching through the copper layer at the second thickness , wherein the traces comprise two different trace thicknesses, where the trace thicknesses are measured perpendicularly to the first surface of the dielectric layer , wherein etching through the copper layer at the first thickness and etching through the copper layer at the second thickness comprises coupling a first layer of photoresist to the second surface of the copper layer , forming a pattern in the first layer of photoresist , etching through the copper layer at the first thickness at spaces in the pattern in the first layer of photoresist , removing the first layer of photoresist , coupling a second layer of photoresist to the second surface of the copper layer , forming a pattern in the second layer of photoresist , etching through the copper layer at the second thickness at the spaces in the pattern in the second layer of photoresist , and removing the second layer of photoresist . partially etching a first surface of a copper layer to form a pattern comprising a first thickness and a second thickness greater than the first thickness , the first thickness and the second thickness both measured perpendicular to a second surface of the copper layer opposite the first surface of the copper layer , the partial etching being made using photoresist ; after removing the photoresist , laminating the first surface of the copper layer with a second surface of a dielectric layer , the dielectric layer coupled to a metallic baseplate at a first surface of the dielectric layer opposite the second surface of the dielectric layer and at a second surface of the metallic baseplate ; and forming traces in the copper layer by etching through the copper layer at the first thickness and etching through the copper layer at the second thickness , wherein the traces comprise two different trace thicknesses, where the trace thicknesses are measured perpendicularly to the first surface of the dielectric layer , wherein etching through the copper layer at the first thickness and etching through the copper layer at the second thickness comprises coupling a first layer of photoresist to the second surface of the copper layer , forming a pattern in the first layer of photoresist , etching through the copper layer at the first thickness at spaces in the pattern in the first layer of photoresist , removing the first layer of photoresist , coupling a second layer of photoresist to the second surface of the copper layer , forming a pattern in the second layer of photoresist , etching through the copper layer at the second thickness at the spaces in the pattern in the second layer of photoresist , and removing the second layer of photoresist . <EOS>