A distributed LC filter structure, comprising: a substrate having a trench etched in a top surface thereof; a first conductive layer disposed in the trench; a first insulator-metal structure disposed in the trench on top of the first conductive layer , the first insulator-metal structure comprising a first insulator layer disposed on top of the first conductive layer and a second conductive layer disposed on top of the first insulator layer ; a second insulator-metal structure disposed in the trench on top of the first insulator-metal structure, the second insulator-metal structure comprising a second insulator layer disposed on top of the second conductive layer and a third conductive layer disposed on top of the second insulator layer ; a first insulation layer deposited along the top surface of the substrate above the third conductive layer ; a first metal layer deposited on top of the first insulation layer ; a second insulation layer deposited on top of the first metal layer ; a second metal layer deposited on top of the second insulation layer ; a first contact array connecting the first conductive layer to the first metal layer ; a second contact array connecting the second conductive layer to the second metal layer ; and a third contact array connecting the third conductive layer to the first metal layer , wherein the first conductive layer , the second conductive layer , and the third conductive layer provide first, second, and third electrodes, respectively, the first, second, and third electrodes forming a first capacitive cell of the distributed LC filter; the second metal layer has a length and a width, the length being larger than the width by a factor of at least 100 and that the second metal layer provides an inductance of the distributed LC filter structure. a substrate having a trench etched in a top surface thereof; a first conductive layer disposed in the trench; a first insulator-metal structure disposed in the trench on top of the first conductive layer , the first insulator-metal structure comprising a first insulator layer disposed on top of the first conductive layer and a second conductive layer disposed on top of the first insulator layer ; a second insulator-metal structure disposed in the trench on top of the first insulator-metal structure, the second insulator-metal structure comprising a second insulator layer disposed on top of the second conductive layer and a third conductive layer disposed on top of the second insulator layer ; a first insulation layer deposited along the top surface of the substrate above the third conductive layer ; a first metal layer deposited on top of the first insulation layer ; a second insulation layer deposited on top of the first metal layer ; a second metal layer deposited on top of the second insulation layer ; a first contact array connecting the first conductive layer to the first metal layer ; a second contact array connecting the second conductive layer to the second metal layer ; and a third contact array connecting the third conductive layer to the first metal layer , wherein the first conductive layer , the second conductive layer , and the third conductive layer provide first, second, and third electrodes, respectively, the first, second, and third electrodes forming a first capacitive cell of the distributed LC filter; the second metal layer has a length and a width, the length being larger than the width by a factor of at least 100 and that the second metal layer provides an inductance of the distributed LC filter structure. <EOS>