An imaging device comprising: a photoelectric conversion unit ; an electric-charge holding unit configured to hold an electric charge generated by the photoelectric conversion unit ; a semiconductor substrate in which the photoelectric conversion unit and the electric-charge holding unit are formed; a wiring layer ; an insulation film layer ; a first light-shielding film ; and a second light-shielding film , wherein the insulation film layer , the first light-shielding film , and the wiring layer are stacked on a second surface of the semiconductor substrate in order from closest to the second surface, the second surface being opposite to a first surface of the semiconductor substrate , the first surface being at a light receiving side of the semiconductor substrate , and the second light-shielding film includes a first light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate , a second light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and penetrating the semiconductor substrate , wherein the second light-shielding portion penetrates the insulation film layer and is coupled to the first light-shielding film , and a third light-shielding portion covering a part of the first surface of the semiconductor substrate . a photoelectric conversion unit ; an electric-charge holding unit configured to hold an electric charge generated by the photoelectric conversion unit ; a semiconductor substrate in which the photoelectric conversion unit and the electric-charge holding unit are formed; a wiring layer ; an insulation film layer ; a first light-shielding film ; and a second light-shielding film , wherein the insulation film layer , the first light-shielding film , and the wiring layer are stacked on a second surface of the semiconductor substrate in order from closest to the second surface, the second surface being opposite to a first surface of the semiconductor substrate , the first surface being at a light receiving side of the semiconductor substrate , and the second light-shielding film includes a first light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate , a second light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and penetrating the semiconductor substrate , wherein the second light-shielding portion penetrates the insulation film layer and is coupled to the first light-shielding film , and a third light-shielding portion covering a part of the first surface of the semiconductor substrate . a first light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate , a second light-shielding portion arranged between the photoelectric conversion unit and the electric-charge holding unit and penetrating the semiconductor substrate , wherein the second light-shielding portion penetrates the insulation film layer and is coupled to the first light-shielding film , and a third light-shielding portion covering a part of the first surface of the semiconductor substrate . <EOS>