A method for polishing a silicon wafer, the method comprising: an intermediate polishing step of polishing a silicon wafer with a polishing slurry Sp containing abrasive grains and a water-soluble polymer; and a final polishing step of polishing the silicon wafer with a polishing slurry Sf containing abrasive grains and a water-soluble polymer, the final polishing step being performed after the intermediate polishing step, characterized in that the polishing slurry Sp contains the water-soluble polymer having a weight-average molecular weight of 60 × 10 4 or less, the polishing slurry Sf contains the water-soluble polymer having a weight-average molecular weight of 60 × 10 4 or less and further contains a surfactant, and the polishing slurry Sp has a relative haze Hp greater than a relative haze Hf of the polishing slurry Sf and less than 6.8 times as high as the relative haze Hf of the polishing slurry Sf, wherein the relative haze Hp is a value calculated in accordance with an equation: Hp = (hp/h 0 ) × 100 from a haze value h 0 obtained in the case of polishing the silicon wafer with a standard slurry II described later and a haze value hp obtained in the case of polishing the silicon wafer with the standard slurry II and then further polishing the silicon wafer with the polishing slurry Sp and the relative haze Hf is a value calculated in accordance with an equation: Hp = (hp/h 0 ) × 100 from a haze value h 0 obtained in the case of polishing the silicon wafer with a standard slurry II described later and a haze_ value hp obtained in the case of polishing the silicon wafer with the standard slurry II and then further polishing the silicon wafer with the polishing slurry Sf. an intermediate polishing step of polishing a silicon wafer with a polishing slurry Sp containing abrasive grains and a water-soluble polymer; and a final polishing step of polishing the silicon wafer with a polishing slurry Sf containing abrasive grains and a water-soluble polymer, the final polishing step being performed after the intermediate polishing step, characterized in that the polishing slurry Sp contains the water-soluble polymer having a weight-average molecular weight of 60 × 10 4 or less, the polishing slurry Sf contains the water-soluble polymer having a weight-average molecular weight of 60 × 10 4 or less and further contains a surfactant, and the polishing slurry Sp has a relative haze Hp greater than a relative haze Hf of the polishing slurry Sf and less than 6.8 times as high as the relative haze Hf of the polishing slurry Sf, wherein the relative haze Hp is a value calculated in accordance with an equation: Hp = (hp/h 0 ) × 100 from a haze value h 0 obtained in the case of polishing the silicon wafer with a standard slurry II described later and a haze value hp obtained in the case of polishing the silicon wafer with the standard slurry II and then further polishing the silicon wafer with the polishing slurry Sp and the relative haze Hf is a value calculated in accordance with an equation: Hp = (hp/h 0 ) × 100 from a haze value h 0 obtained in the case of polishing the silicon wafer with a standard slurry II described later and a haze_ value hp obtained in the case of polishing the silicon wafer with the standard slurry II and then further polishing the silicon wafer with the polishing slurry Sf. <EOS>