An organic transistor array comprising a plurality of organic thin film transistors 10 wherein each organic thin film transistor 10 is formed from components including a substrate , a gate electrode , a ground electrode , a gate insulator layer , a source electrode , and a drain electrode , such that the organic transistor array comprises: a plurality of said gate electrodes and a plurality of said ground electrodes formed at the same layer provided on said substrate surface at a predetermined distance from each other; said gate insulator layer formed to cover said plurality of gate electrodes and said plurality of ground electrodes ; a plurality of said source electrodes and a plurality of said drain electrodes formed at the same layer provided above the plurality of gate electrodes via the gate insulator layer , wherein the source electrodes and the drain electrodes are formed on the gate insulator layer at a predetermined distance from each other; characterized in that the components forming each organic thin film transistor further include an organic semiconductor layer , such that the organic transistor array further comprises a plurality of said organic semiconductor layers opposing the plurality of gate electrodes via the gate insulator layer , each formed so as to provide a channel region between mutually adjacent source and drain electrodes , wherein in a plan view viewed in a direction perpendicular to the substrate surface the gate and ground electrodes are provided along a first direction and are arranged alternately, wherein the source electrodes are arranged along a second direction perpendicular to the first direction and wherein the plurality of drain electrodes have a hexagonal island structure in the plan view and are positioned between the source electrodes , wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections each forming a single pixel, and each of the sections has a hexagonal shape with a geometrically closest packed structure in the plan view. a plurality of said gate electrodes and a plurality of said ground electrodes formed at the same layer provided on said substrate surface at a predetermined distance from each other; said gate insulator layer formed to cover said plurality of gate electrodes and said plurality of ground electrodes ; a plurality of said source electrodes and a plurality of said drain electrodes formed at the same layer provided above the plurality of gate electrodes via the gate insulator layer , wherein the source electrodes and the drain electrodes are formed on the gate insulator layer at a predetermined distance from each other; characterized in that the components forming each organic thin film transistor further include an organic semiconductor layer , such that the organic transistor array further comprises a plurality of said organic semiconductor layers opposing the plurality of gate electrodes via the gate insulator layer , each formed so as to provide a channel region between mutually adjacent source and drain electrodes , wherein in a plan view viewed in a direction perpendicular to the substrate surface the gate and ground electrodes are provided along a first direction and are arranged alternately, wherein the source electrodes are arranged along a second direction perpendicular to the first direction and wherein the plurality of drain electrodes have a hexagonal island structure in the plan view and are positioned between the source electrodes , wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections each forming a single pixel, and each of the sections has a hexagonal shape with a geometrically closest packed structure in the plan view. <EOS>