mhurhangee/patent-ind-claim-en huggingface dataset:
A method for fabricating an integrated semiconductor photonics device, the method comprising: - providing a first substrate having on top a planar mono crystalline semiconductor layer suitable for supporting an optical mode; - forming a homogenous and conformal first dielectric layer on a planar upper main surface of the mono crystalline semiconductor layer ; - providing a dielectric waveguide core on top of and in direct contact with the upper main surface of the first dielectric layer , such that for any point on the lower surface of the waveguide core the stack perpendicularly underneath it comprises the conformal first dielectric layer , the mono crystalline semiconductor layer , and the first substrate ; the dielectric waveguide core furthermore being optically coupled to a first region of the mono crystalline semiconductor layer through the first dielectric layer ; - depositing a second dielectric layer on the dielectric waveguide core thereby covering the dielectric waveguide core , - annealing the dielectric waveguide core thereby driving hydrogen out of the dielectric waveguide core . - providing a first substrate having on top a planar mono crystalline semiconductor layer suitable for supporting an optical mode; - forming a homogenous and conformal first dielectric layer on a planar upper main surface of the mono crystalline semiconductor layer ; - providing a dielectric waveguide core on top of and in direct contact with the upper main surface of the first dielectric layer , such that for any point on the lower surface of the waveguide core the stack perpendicularly underneath it comprises the conformal first dielectric layer , the mono crystalline semiconductor layer , and the first substrate ; the dielectric waveguide core furthermore being optically coupled to a first region of the mono crystalline semiconductor layer through the first dielectric layer ; - depositing a second dielectric layer on the dielectric waveguide core thereby covering the dielectric waveguide core , - annealing the dielectric waveguide core thereby driving hydrogen out of the dielectric waveguide core .
A molded plastic fiber optic adapter plate comprising: a molded plastic adapter back plate having a plurality of integrated fiber optic adapter subassemblies ; a molded plastic adapter front plate having a corresponding plurality of integrated fiber optic adapter subassemblies ; a first attachment mechanism adapted to align and attach the molded plastic adapter front plate to the molded plastic adapter back plate ; and a second attachment mechanism adapted to attach the molded plastic fiber optic adapter plate to an enclosure, wherein the first attachment mechanism comprises a recessed face of the molded plastic adapter back plate that accepts a raised mating surface of the molded plastic adapter front plate ; and characterized in that the first attachment mechanism further comprises structures consisting of a plurality of mating pins on the raised mating surface of the molded plastic adapter front plate and a plurality of corresponding holes in the recessed face of the molded plastic adapter back plate , wherein a hole of the plurality of corresponding holes accepts a mating pin of the plurality of mating pins . a molded plastic adapter back plate having a plurality of integrated fiber optic adapter subassemblies ; a molded plastic adapter front plate having a corresponding plurality of integrated fiber optic adapter subassemblies ; a first attachment mechanism adapted to align and attach the molded plastic adapter front plate to the molded plastic adapter back plate ; and a second attachment mechanism adapted to attach the molded plastic fiber optic adapter plate to an enclosure, wherein the first attachment mechanism comprises a recessed face of the molded plastic adapter back plate that accepts a raised mating surface of the molded plastic adapter front plate ; and characterized in that the first attachment mechanism further comprises structures consisting of a plurality of mating pins on the raised mating surface of the molded plastic adapter front plate and a plurality of corresponding holes in the recessed face of the molded plastic adapter back plate , wherein a hole of the plurality of corresponding holes accepts a mating pin of the plurality of mating pins .
An implant for treating a fistula, comprising: a shaft having a proximal end, a distal end, characterized in that , the shaft comprises: a plurality of coil loops; and a plurality of barbs positioned on the shaft, wherein each of the plurality of barbs is located distally of a proximal-most coil loop of the plurality of coil loops; and in that the coil loops form a helical coil having a tapered portion. a shaft having a proximal end, a distal end, characterized in that , the shaft comprises: a plurality of coil loops; and a plurality of barbs positioned on the shaft, wherein each of the plurality of barbs is located distally of a proximal-most coil loop of the plurality of coil loops; and in that the coil loops form a helical coil having a tapered portion. a plurality of coil loops; and a plurality of barbs positioned on the shaft, wherein each of the plurality of barbs is located distally of a proximal-most coil loop of the plurality of coil loops; and in that the coil loops form a helical coil having a tapered portion.
A process for producing a wiring board using an insulating substrate having a through hole comprising: forming a seed layer on one surface of the insulating substrate , forming a resist layer on an area of the seed layer where an electrode on the through hole is not formed, and covering the whole surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed with a first masking film , forming a first metal layer in the through hole by carrying out electroplating on the surface of the insulating substrate on which the seed layer is formed, forming the first metal layer in the through hole so that the diameter of an opening of the through hole in which the first metal layer is formed is 10 to 50% of the diameter of the opening of the through hole before formation of the first metal layer , covering the whole surface of the insulating substrate on which the seed layer , the resist layer and the first metal layer are formed with a second masking film , and removing the first masking film which covers the whole surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed, carrying out electroplating from the surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed, to form a second metal layer in a space between the masking film and the seed layer and in the through hole , and thereby the electrode is formed, and removing the second masking film , the resist layer and the seed layer from the insulating substrate . forming a seed layer on one surface of the insulating substrate , forming a resist layer on an area of the seed layer where an electrode on the through hole is not formed, and covering the whole surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed with a first masking film , forming a first metal layer in the through hole by carrying out electroplating on the surface of the insulating substrate on which the seed layer is formed, forming the first metal layer in the through hole so that the diameter of an opening of the through hole in which the first metal layer is formed is 10 to 50% of the diameter of the opening of the through hole before formation of the first metal layer , covering the whole surface of the insulating substrate on which the seed layer , the resist layer and the first metal layer are formed with a second masking film , and removing the first masking film which covers the whole surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed, carrying out electroplating from the surface of the insulating substrate opposite to the surface of the insulating substrate on which the seed layer is formed, to form a second metal layer in a space between the masking film and the seed layer and in the through hole , and thereby the electrode is formed, and removing the second masking film , the resist layer and the seed layer from the insulating substrate .
A wearable harness having a plurality of straps comprising: a first shoulder strap and a second shoulder strap, wherein at least one of the first shoulder strap and the second shoulder strap comprises a tubular webbing; and an energy absorbing element integrated with at least one of the first shoulder strap and the second shoulder strap, wherein the energy absorbing element is at least partially encased within the tubular webbing and comprises a tearable webbing material with at least two bound webbing components configured to tear from one another when the first shoulder strap and the second shoulder strap are subjected to a force that exceeds a predetermined threshold during a fall event. a first shoulder strap and a second shoulder strap, wherein at least one of the first shoulder strap and the second shoulder strap comprises a tubular webbing; and an energy absorbing element integrated with at least one of the first shoulder strap and the second shoulder strap, wherein the energy absorbing element is at least partially encased within the tubular webbing and comprises a tearable webbing material with at least two bound webbing components configured to tear from one another when the first shoulder strap and the second shoulder strap are subjected to a force that exceeds a predetermined threshold during a fall event.
A sugar-depleted fruit or vegetable juice product, wherein said juice product is a fruit or vegetable juice or juice-retaining fruit or vegetable derived matter, wherein said juice product contains at least 5 g/l gluconic acid and said juice product contains any two or three, of (i) at least 0.5 g/l Ca 2+ , (ii) at least 1 g/l K + , and (iii) at least 0.1 g/l Mg 2+ . (i) at least 0.5 g/l Ca 2+ , (ii) at least 1 g/l K + , and (iii) at least 0.1 g/l Mg 2+ .
An auditory prosthesis, comprising: one or more input elements configured to receive sound and/or acoustic signals; and a sound processing path configured to convert the sound and/or acoustic signals into one or more output signals for use in delivering electrical stimulation to a recipient via one or more stimulation channels; the auditory prosthesis further comprising: a stimulus resolution adaption module configured to select, based on a environment of the sound and/or acoustic signals, an electrode configuration for use in delivering the electrical stimulation to the recipient via the one or more stimulation channels, wherein the electrode configuration controls, for a given stimulation channel, a degree of current spread associated with the electrical stimulation signals in response to stimulation signals delivered via the given stimulation channel. one or more input elements configured to receive sound and/or acoustic signals; and a sound processing path configured to convert the sound and/or acoustic signals into one or more output signals for use in delivering electrical stimulation to a recipient via one or more stimulation channels; the auditory prosthesis further comprising: a stimulus resolution adaption module configured to select, based on a environment of the sound and/or acoustic signals, an electrode configuration for use in delivering the electrical stimulation to the recipient via the one or more stimulation channels, wherein the electrode configuration controls, for a given stimulation channel, a degree of current spread associated with the electrical stimulation signals in response to stimulation signals delivered via the given stimulation channel.
A wearable device including conductive elements which form at least part of an antenna, an RF-to-DC converter connected to said conductive elements for harvesting RF energy and induced static electricity variation at the input in the form of an AC voltage (V in ), said RF-to-DC converter providing a DC voltage (V out ) at the output, and a control unit connected to the output of said RF-to-DC converter to determine the induced voltage exposure of a device wearer's body, characterized in that said conductive elements are configured to be in electrical contact to the wearer's body.
An air conditioning equipment , comprising: a housing comprising a heat exchanger therein; a water container mounted to, and dismounted from a receiving portion of the housing and to collect a condensate generated by the heat exchanger; a valve configured to selectively open and close a discharge port by being interfered with a portion of the water container according to the mounting and the dismounting of the water container to or from the receiving portion of the housing, characterised in that the valve comprises: a sealing member arranged along an edge of the discharge port ; a lid member selectively seated on the sealing member ; a cover covering the lid member ; and a first elastic member arranged between the lid member and the cover , the first elastic member pressing the lid member downwards, wherein the cover is provided with an opening formed on a portion of the cover at which the cover meets a discharge path guiding the condensate to the discharge port , and when the water container is mounted to the receiving portion of the housing , the lid member is interfered with the portion of the water container and ascends, and the first elastic member is compressed by the lid member . a housing comprising a heat exchanger therein; a water container mounted to, and dismounted from a receiving portion of the housing and to collect a condensate generated by the heat exchanger; a valve configured to selectively open and close a discharge port by being interfered with a portion of the water container according to the mounting and the dismounting of the water container to or from the receiving portion of the housing, characterised in that the valve comprises: a sealing member arranged along an edge of the discharge port ; a lid member selectively seated on the sealing member ; a cover covering the lid member ; and a first elastic member arranged between the lid member and the cover , the first elastic member pressing the lid member downwards, wherein the cover is provided with an opening formed on a portion of the cover at which the cover meets a discharge path guiding the condensate to the discharge port , and when the water container is mounted to the receiving portion of the housing , the lid member is interfered with the portion of the water container and ascends, and the first elastic member is compressed by the lid member . a sealing member arranged along an edge of the discharge port ; a lid member selectively seated on the sealing member ; a cover covering the lid member ; and a first elastic member arranged between the lid member and the cover , the first elastic member pressing the lid member downwards, wherein the cover is provided with an opening formed on a portion of the cover at which the cover meets a discharge path guiding the condensate to the discharge port , and when the water container is mounted to the receiving portion of the housing , the lid member is interfered with the portion of the water container and ascends, and the first elastic member is compressed by the lid member .
A quantum dot population comprising a plurality of cadmium free quantum dots, wherein the plurality of cadmium free quantum dots comprises a semiconductor nanocrystal core comprising indium, In, and phosphorous, P; a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium; and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to 5.5 nanometers, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to 0.85, wherein in the plurality of cadmium free quantum dots, a mole ratio of selenium with respect to indium is greater than or equal to 6.5, and wherein the plurality of cadmium free quantum dots comprises an organic ligand on surfaces thereof, and the organic ligand comprises a carboxylic acid compound and a primary amine compound. a semiconductor nanocrystal core comprising indium, In, and phosphorous, P; a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium; and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur,
Procedure for the obtention of a liquid fertilizer that comprise the following steps: a) shredding the starting material, wherein the starting material comprises: - tomato plants residues, which refers to vegetative parts of the plant left on the ground after harvest - tomato cull and - corn stover, b) mixing the shredded materials tomato plant residues, tomato cull and corn stover in a weight ratio of 0.2:0.5:0.3, respectively, and adding water to the mixture to reach 55-60% moisture level, c) composting the mixture obtained in the previous step b) by maintaining it at a temperature between 55 and 65 °C for a time between 45 days and 3 months, wherein turning operations are performed when the temperature decreases and water is also added during each turning operation to maintain a 55-60% moisture level, d) thermal-alkaline hydrolysis of the compost obtained in the previous step c) by contacting the compost with an alkaline solution at pH 11-13, heated at 121-124 °C and then cooled down to a temperature between 20 and 30 °C, e) separation of the liquid phase from the solids obtained in previous step d), f) concentration of the liquid separated in the previous step e) by evaporation. a) shredding the starting material, wherein the starting material comprises: - tomato plants residues, which refers to vegetative parts of the plant left on the ground after harvest - tomato cull and - corn stover, - tomato plants residues, which refers to vegetative parts of the plant left on the ground after harvest - tomato cull and - corn stover, b) mixing the shredded materials tomato plant residues, tomato cull and corn stover in a weight ratio of 0.2:0.5:0.3, respectively, and adding water to the mixture to reach 55-60% moisture level, c) composting the mixture obtained in the previous step b) by maintaining it at a temperature between 55 and 65 °C for a time between 45 days and 3 months, wherein turning operations are performed when the temperature decreases and water is also added during each turning operation to maintain a 55-60% moisture level, d) thermal-alkaline hydrolysis of the compost obtained in the previous step c) by contacting the compost with an alkaline solution at pH 11-13, heated at 121-124 °C and then cooled down to a temperature between 20 and 30 °C, e) separation of the liquid phase from the solids obtained in previous step d), f) concentration of the liquid separated in the previous step e) by evaporation.
A rate control method, comprising: receiving, by a control device , a connection establishment request from a terminal, wherein the connection establishment request is used to establish a connection for the terminal to transmit data; and sending, by the control device, rate control time management information to a data sending device , wherein the time management information is used by the data sending device to perform rate control over the data sent through the connection, the time management information comprises start time indication information of a rate control time unit used for rate control, and the start time indication information is used to indicate a start time of the rate control time unit, wherein the start time indication information is any one of the following information: a time point at which the connection is successfully established, a time point at which the first data unit is transmitted through the connection, or a start time of a next charging period. receiving, by a control device , a connection establishment request from a terminal, wherein the connection establishment request is used to establish a connection for the terminal to transmit data; and sending, by the control device, rate control time management information to a data sending device , wherein the time management information is used by the data sending device to perform rate control over the data sent through the connection, the time management information comprises start time indication information of a rate control time unit used for rate control, and the start time indication information is used to indicate a start time of the rate control time unit, wherein the start time indication information is any one of the following information: a time point at which the connection is successfully established, a time point at which the first data unit is transmitted through the connection, or a start time of a next charging period. a time point at which the connection is successfully established, a time point at which the first data unit is transmitted through the connection, or a start time of a next charging period.
An exhaust gas purification system for an internal combustion engine in which liquid fuel and compressed natural gas can be mixed and combusted; said system comprising an exhaust gas purification device that is arranged in an exhaust passage of the internal combustion engine and has an oxidation function; said system being characterized by further comprising: an HC supply device configured to supply HC to said exhaust gas purification device, causing a temperature thereof to rise so as to regenerate said exhaust gas purification device; and an HC supply amount control device that, when the liquid fuel and the compressed natural gas are caused to mix and combust in the internal combustion engine at the time of regenerating said exhaust gas purification device, decreases an amount of HC to be supplied to said exhaust gas purification device from said HC supply device in comparison to the amount of HC supplied to said exhaust gas purification device from said HC supply device at the time of regeneration of said exhaust purification device when only the liquid fuel is caused to combust in the internal combustion engine with an operating state thereof being kept the same. an HC supply device configured to supply HC to said exhaust gas purification device, causing a temperature thereof to rise so as to regenerate said exhaust gas purification device; and an HC supply amount control device that, when the liquid fuel and the compressed natural gas are caused to mix and combust in the internal combustion engine at the time of regenerating said exhaust gas purification device, decreases an amount of HC to be supplied to said exhaust gas purification device from said HC supply device in comparison to the amount of HC supplied to said exhaust gas purification device from said HC supply device at the time of regeneration of said exhaust purification device when only the liquid fuel is caused to combust in the internal combustion engine with an operating state thereof being kept the same.
A compound of the general formula (Id): wherein L 2 is a linking group selected from the group consisting of an C 4-6 -alkylamidylene and a pyrrolidinylene, said linking group optionally substituted with one or two of alkyl, hydroxy, oxo or thioxo group Z is a C 1-2 -perfluoroalkoxy and Y is halogen; an enantiomer, diastereomer, mixture or salt thereof. L 2 is a linking group selected from the group consisting of an C 4-6 -alkylamidylene and a pyrrolidinylene, said linking group optionally substituted with one or two of alkyl, hydroxy, oxo or thioxo group Z is a C 1-2 -perfluoroalkoxy and Y is halogen;