A high voltage power electronics module for subsea applications, wherein high voltage is voltages starting at 600 V, wherein the power electronics module comprises: a baseplate , a power semiconductor chip arranged on the baseplate , and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip , wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure , wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners , wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure , wherein in said cross-section of the encapsulation structure any rounded inner corner and rounded outer corner is connected by an inclined line forming an outer boundary of the encapsulation structure , and wherein the outer angle (α) between at least some of the inclined lines and said plane (P) is an obtuse angle. a baseplate , a power semiconductor chip arranged on the baseplate , and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip , wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure , wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners , wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure , wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure , wherein in any cross-section through the encapsulation structure , perpendicular to a plane (P) defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners , wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure , wherein in said cross-section of the encapsulation structure any rounded inner corner and rounded outer corner is connected by an inclined line forming an outer boundary of the encapsulation structure , and wherein the outer angle (α) between at least some of the inclined lines and said plane (P) is an obtuse angle. <EOS>