Electronic fuse for a load (R L ) connectable to a low-voltage DC network, consisting of assemblies which are arranged between input terminals (0 V/24 V) and a load (R L ) and which comprise a voltage monitoring unit, a current monitoring unit, and semiconductor switching units and control systems assigned thereto, as well as a microcontroller (μC) and a thyristor connected to the input terminals, characterised in that a series connection of a TVS diode (TVS) and a resistor (R1) is connected to the input terminals (0 V/24 V), the resistor (R1) being connected to a first terminal of the microcontroller (pC), and the resulting voltage drop across the resistor (R1) supplying an overvoltage detection signal to the microcontroller (μC ) when the forward voltage is reached at the TVS diode (TVS) as a result of overvoltage, a second terminal of the microcontroller (μC) is connected to a first semiconductor switching unit (M1; MOSFET), the first semiconductor switching unit (M1; MOSFET) being in series with the load (R L ) as a longitudinal switch, the microcontroller (μC) blocking the first semiconductor switching unit (M1; MOSFET) when the overvoltage detection signal is present, a shunt (R shunt ) is formed in series with the load (R L ) as a current monitoring unit, the voltage drop across the shunt (R shunt ) being analysed by the mictrocontroller (μC) via a third terminal and the load (R L ) being switched off by means of the first semiconductor switching unit (M1; MOSFET) if an overcurrent exceeding a threshold is detected, the thyristor located between the input terminals (0 V/24 V) is further a MOS gate thyristor (MGT; IGBT), the control input of which is connected to a fourth terminal of the microcontroller (μC) in such a way that when the overvoltage detection signal is present the MOS gate thyristor (MGT; IGBT) can be shifted into the on state, a second semiconductor unit, formed as an IGBT, being connected in parallel with the MOS gate thyristor (MGT), the control input of the IGBT being connected to the fourth terminal of the microcontroller (μC). a series connection of a TVS diode (TVS) and a resistor (R1) is connected to the input terminals (0 V/24 V), the resistor (R1) being connected to a first terminal of the microcontroller (pC), and the resulting voltage drop across the resistor (R1) supplying an overvoltage detection signal to the microcontroller (μC ) when the forward voltage is reached at the TVS diode (TVS) as a result of overvoltage, a second terminal of the microcontroller (μC) is connected to a first semiconductor switching unit (M1; MOSFET), the first semiconductor switching unit (M1; MOSFET) being in series with the load (R L ) as a longitudinal switch, the microcontroller (μC) blocking the first semiconductor switching unit (M1; MOSFET) when the overvoltage detection signal is present, a shunt (R shunt ) is formed in series with the load (R L ) as a current monitoring unit, the voltage drop across the shunt (R shunt ) being analysed by the mictrocontroller (μC) via a third terminal and the load (R L ) being switched off by means of the first semiconductor switching unit (M1; MOSFET) if an overcurrent exceeding a threshold is detected, the thyristor located between the input terminals (0 V/24 V) is further a MOS gate thyristor (MGT; IGBT), the control input of which is connected to a fourth terminal of the microcontroller (μC) in such a way that when the overvoltage detection signal is present the MOS gate thyristor (MGT; IGBT) can be shifted into the on state, a second semiconductor unit, formed as an IGBT, being connected in parallel with the MOS gate thyristor (MGT), the control input of the IGBT being connected to the fourth terminal of the microcontroller (μC). <EOS>