An electrostatic protection circuit for protecting an internal circuit, the electrostatic protection circuit comprising: a first circuit connected between a power pad and an input pad and configured to discharge a first electrostatic current, the first electrostatic current flowing from the input pad to the power pad; and a second circuit connected between the input pad and a ground pad and configured to discharge a second electrostatic current, the second electrostatic current flowing from the input pad to the ground pad; wherein the ground pad and the power pad are both located on a substrate, the substrate being a P-type substrate, the substrate being provided with a first N-type deep well , and the first N-type deep well being provided with a first P-type well , a first N-type well and a second P-type well , characterized in that the first P-type well is provided with a first P-type heavily doped region and a first N-type heavily doped region , the first N-type heavily doped region being electrically connected to the ground pad; the first N-type well is provided with a second P-type heavily doped region , a second N-type heavily doped region and a third P-type heavily doped region , the second N-type heavily doped region being electrically connected to the first P-type heavily doped region , and the second P-type heavily doped region and the third P-type heavily doped region being both electrically connected to the input pad; and the second P-type well is provided with a third N-type heavily doped region and a fourth P-type heavily doped region , the third N-type heavily doped region being electrically connected to the power pad, and the fourth P-type heavily doped region being electrically connected to the second N-type heavily doped region . a first circuit connected between a power pad and an input pad and configured to discharge a first electrostatic current, the first electrostatic current flowing from the input pad to the power pad; and a second circuit connected between the input pad and a ground pad and configured to discharge a second electrostatic current, the second electrostatic current flowing from the input pad to the ground pad; wherein the ground pad and the power pad are both located on a substrate, the substrate being a P-type substrate, the substrate being provided with a first N-type deep well , and the first N-type deep well being provided with a first P-type well , a first N-type well and a second P-type well , characterized in that the first P-type well is provided with a first P-type heavily doped region and a first N-type heavily doped region , the first N-type heavily doped region being electrically connected to the ground pad; the first N-type well is provided with a second P-type heavily doped region , a second N-type heavily doped region and a third P-type heavily doped region , the second N-type heavily doped region being electrically connected to the first P-type heavily doped region , and the second P-type heavily doped region and the third P-type heavily doped region being both electrically connected to the input pad; and the second P-type well is provided with a third N-type heavily doped region and a fourth P-type heavily doped region , the third N-type heavily doped region being electrically connected to the power pad, and the fourth P-type heavily doped region being electrically connected to the second N-type heavily doped region . <EOS>