A method of forming a graphene nanopattern (200P, 200P', 200P", 201P, 2000P, 2001P), the method comprising: providing a graphene layer on an underlayer ; forming a block copolymer layer on the graphene layer, the block copolymer layer including a plurality of first regions and a plurality of second regions arranged in a direction parallel to the graphene layer, and one of the plurality of first regions being arranged along an edge portion of the graphene layer; forming a mask pattern by removing either the plurality of first regions or the plurality of second regions of the block copolymer layer; and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask; wherein the underlayer is a substrate , the graphene layer having a smaller width than the substrate; wherein the step of forming a block copolymer layer on the graphene layer comprises forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer; wherein the forming the block copolymer layer includes, forming a thin film by coating a surface of the graphene layer and a region of the underlayer with a solution including a block copolymer, and inducing a self-assembly of the block copolymer in the thin film by annealing the thin film; wherein the forming the block copolymer layer includes using a directed self-assembly (DSA) method assisted by the edge portion of the graphene layer; wherein the graphene layer and exposed regions of the substrate structure on both sides thereof have different surface characteristics; wherein the block copolymer includes a first polymer and a second polymer; wherein the first polymer and the second polymer are self-arranged in a regular pattern; and wherein the first region including the first polymer and the second region including the second polymer alternate with each other. providing a graphene layer on an underlayer ; forming a block copolymer layer on the graphene layer, the block copolymer layer including a plurality of first regions and a plurality of second regions arranged in a direction parallel to the graphene layer, and one of the plurality of first regions being arranged along an edge portion of the graphene layer; forming a mask pattern by removing either the plurality of first regions or the plurality of second regions of the block copolymer layer; and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask; wherein the underlayer is a substrate , the graphene layer having a smaller width than the substrate; wherein the step of forming a block copolymer layer on the graphene layer comprises forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer; wherein the forming the block copolymer layer includes, forming a thin film by coating a surface of the graphene layer and a region of the underlayer with a solution including a block copolymer, and inducing a self-assembly of the block copolymer in the thin film by annealing the thin film; forming a thin film by coating a surface of the graphene layer and a region of the underlayer with a solution including a block copolymer, and inducing a self-assembly of the block copolymer in the thin film by annealing the thin film; wherein the forming the block copolymer layer includes using a directed self-assembly (DSA) method assisted by the edge portion of the graphene layer; wherein the graphene layer and exposed regions of the substrate structure on both sides thereof have different surface characteristics; wherein the block copolymer includes a first polymer and a second polymer; wherein the first polymer and the second polymer are self-arranged in a regular pattern; and wherein the first region including the first polymer and the second region including the second polymer alternate with each other. <EOS>