mhurhangee/patent-ind-claim-en huggingface dataset:
A light emitting diode device (100-3; 200-2) comprising: a light emitting structure (120-1; 450) comprising a first semiconductor layer (122; 452), an active layer (124; 454) and a second semiconductor layer (126; 456); a pad portion (222; 102a) for wire bonding disposed on the second semiconductor layer (126; 456); a phosphor plate (150-1; 150-2) disposed on the second semiconductor layer (126; 456); and a bonding portion (230-m, 240-m; 320-n, where m, n are natural numbers) disposed between the light emitting structure (120-1; and the phosphor plate (150-1; the bonding portion (230-m, 240-m; 320-n) bonding the phosphor plate (150-1; 150-2) to the light emitting structure (120-1; 450), wherein an extension electrode portion (224, 226; 92a, 92c) extends from the pad portion (222; 102a) horizontally and is disposed on the second semiconductor layer (126; 456), wherein the phosphor plate (150-1; 150-2) has an opening (291; 153-3) exposing the pad portion (222; 102a), and wherein bonding portion (230-m, 240-m; 320-n) comprises bonding electrode layer (286-m; 287-n, where m, n are natural numbers) disposed on a surface of the phosphor plate (150-1; 150-2) and bonded to the extension electrode portion (224, 226; 92a, 92c). a light emitting structure (120-1; 450) comprising a first semiconductor layer (122; 452), an active layer (124; 454) and a second semiconductor layer (126; 456); a pad portion (222; 102a) for wire bonding disposed on the second semiconductor layer (126; 456); a phosphor plate (150-1; 150-2) disposed on the second semiconductor layer (126; 456); and a bonding portion (230-m, 240-m; 320-n, where m, n are natural numbers) disposed between the light emitting structure (120-1; and the phosphor plate (150-1; the bonding portion (230-m, 240-m; 320-n) bonding the phosphor plate (150-1; 150-2) to the light emitting structure (120-1; 450), wherein an extension electrode portion (224, 226; 92a, 92c) extends from the pad portion (222; 102a) horizontally and is disposed on the second semiconductor layer (126; 456), wherein the phosphor plate (150-1; 150-2) has an opening (291; 153-3) exposing the pad portion (222; 102a), and wherein bonding portion (230-m, 240-m; 320-n) comprises bonding electrode layer (286-m; 287-n, where m, n are natural numbers) disposed on a surface of the phosphor plate (150-1; 150-2) and bonded to the extension electrode portion (224, 226; 92a, 92c).
Toothed belt drive with a toothed belt and at least two toothed pulleys , wherein the toothed belt has at least one drive side provided with a toothed profile, the toothed belt wraps around the toothed pulleys over a partial area of their circumference and the teeth of the toothed belt meshingly engage in the tooth gaps of the toothed pulleys , characterized in that at least one of the toothings on the belt or pulley is formed as a series of tooth pitches varying along the circumference, wherein - the individual tooth pitches are designed to vary by up to a maximum of 5% relative to the mean tooth pitch on the belt or pulley, and - the absolute deviation of a varied tooth pitch from the mean tooth pitch on the belt or pulley is limited by the backlash of the toothing, wherein the backlash results from the difference of the width (es) of the tooth gaps of the respective toothed pulley and the width ( e R ) of the teeth of the toothed belt in the middle of the tooth height of the teeth of the toothed belt . - the individual tooth pitches are designed to vary by up to a maximum of 5% relative to the mean tooth pitch on the belt or pulley, and - the absolute deviation of a varied tooth pitch from the mean tooth pitch on the belt or pulley is limited by the backlash of the toothing,
A method, comprising: attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer, the partially processed CMOS wafer having been partially processed in a front end process of a CMOS process prior to the attaching of the partially processed CMOS wafer to the second wafer , wherein the partially processed CMOS wafer comprises a CMOS device region including transistors, wherein the second wafer comprises a silicon substrate and a first region comprising a material different from silicon disposed over the silicon substrate , wherein the attaching of the partially processed CMOS wafer to the second wafer is performed such that the combined wafer has the first region positioned between the CMOS device region of the partially-processed CMOS wafer and the silicon substrate ; forming devices in the first region or in a second region that is formed over the first region of the combined wafer comprising a material different from silicon; and after forming the devices and attaching the partially processed CMOS wafer to the second wafer , and in a back end process of a CMOS process, forming interconnects that interconnect the transistors of the CMOS device region and interconnects that interconnect the transistors of the CMOS device region and the devices of the first region . attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer, the partially processed CMOS wafer having been partially processed in a front end process of a CMOS process prior to the attaching of the partially processed CMOS wafer to the second wafer , wherein the partially processed CMOS wafer comprises a CMOS device region including transistors, wherein the second wafer comprises a silicon substrate and a first region comprising a material different from silicon disposed over the silicon substrate , wherein the attaching of the partially processed CMOS wafer to the second wafer is performed such that the combined wafer has the first region positioned between the CMOS device region of the partially-processed CMOS wafer and the silicon substrate ; forming devices in the first region or in a second region that is formed over the first region of the combined wafer comprising a material different from silicon; and after forming the devices and attaching the partially processed CMOS wafer to the second wafer , and in a back end process of a CMOS process, forming interconnects that interconnect the transistors of the CMOS device region and interconnects that interconnect the transistors of the CMOS device region and the devices of the first region .
A method of controlling an isolated high voltage circuit of a vehicle comprising the high voltage circuit and a low voltage circuit wherein the high voltage circuit is isolated from the low voltage circuit , the method comprising: detecting a change in the isolation resistance of the high voltage circuit from the low voltage circuit ; determining the speed of the vehicle or detecting a driver input indicative of a desired speed of the vehicle ; disabling the high voltage circuit in dependence on the change in the isolation resistance; after disabling the high voltage circuit , detecting a close opportunity, the close opportunity comprising at least one selected from the speed of the vehicle being above a threshold value, and the driver input indicating that the desired speed is above a threshold value, and re-enabling the high voltage circuit if the close opportunity persists for more than a predetermined period of time. detecting a change in the isolation resistance of the high voltage circuit from the low voltage circuit ; determining the speed of the vehicle or detecting a driver input indicative of a desired speed of the vehicle ; disabling the high voltage circuit in dependence on the change in the isolation resistance; after disabling the high voltage circuit , detecting a close opportunity, the close opportunity comprising at least one selected from the speed of the vehicle being above a threshold value, and the driver input indicating that the desired speed is above a threshold value, and re-enabling the high voltage circuit if the close opportunity persists for more than a predetermined period of time.
An oven comprising: a heater arranged in a cooking compartment ; a temperature sensor to sense a temperature of the cooking compartment at the beginning of each of a plurality of preset periods (T) of time; and a controller configured to reset on/off times (N, F) of the heater for each of the plurality of preset periods at the beginning of each of the preset period based on a preset target temperature and a current temperature and a previous temperature of the cooking compartment, sensed by the temperature sensor, wherein the on/off times comprise an on time of the heater during which the heater remains turned on and an off time of the heater during which the heater remains turned off, and wherein the controller is further configured to control a driving of the heater according to the reset on/off times, such that the duration of the each of the plurality of preset periods is adjustable according to the duration of the on/off times. a heater arranged in a cooking compartment ; a temperature sensor to sense a temperature of the cooking compartment at the beginning of each of a plurality of preset periods (T) of time; and a controller configured to reset on/off times (N, F) of the heater for each of the plurality of preset periods at the beginning of each of the preset period based on a preset target temperature and a current temperature and a previous temperature of the cooking compartment, sensed by the temperature sensor, wherein the on/off times comprise an on time of the heater during which the heater remains turned on and an off time of the heater during which the heater remains turned off, and wherein the controller is further configured to control a driving of the heater according to the reset on/off times, such that the duration of the each of the plurality of preset periods is adjustable according to the duration of the on/off times.
Process for purifying 2,3,3,3-tetrafluoro-1-propene using a first composition comprising 2,3,3,3-tetrafluoro-1-propene, 1,1,1,2,2-pentafluoropropane and trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E), said process comprising the steps of: a) placing said first composition in contact with at least one organic extracting agent to form a second composition; b) extractive distillation of said second composition to form: i) a third composition comprising said organic extracting agent and trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E); and ii) a stream comprising 2,3,3,3-tetrafluoro-1-propene and 1,1,1,2,2-pentafluoropropane ; c) recovery and separation of said third composition to form a stream comprising said organic extracting agent and a stream comprising trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E); preferably, the stream comprising said organic extracting agent is recycled into step a). a) placing said first composition in contact with at least one organic extracting agent to form a second composition; b) extractive distillation of said second composition to form: i) a third composition comprising said organic extracting agent and trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E); and ii) a stream comprising 2,3,3,3-tetrafluoro-1-propene and 1,1,1,2,2-pentafluoropropane ; i) a third composition comprising said organic extracting agent and trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E); and ii) a stream comprising 2,3,3,3-tetrafluoro-1-propene and 1,1,1,2,2-pentafluoropropane ; c) recovery and separation of said third composition to form a stream comprising said organic extracting agent and a stream comprising trans-1,3,3,3-tetrafluoro-1-propene (1234ze-E); preferably, the stream comprising said organic extracting agent is recycled into step a).
A computer-implemented method of collecting data in a wireless network to be analyzed for optimizing network performance, said wireless network including one or more wireless infrastructure devices providing a network service and one or more client devices consuming a network service, the method comprising the steps of: (a) capturing a stream of radio frequency, RF, signal data in the network for said one or more wireless infrastructure devices and said one or more client devices; (b) dividing each stream of RF signal data by time into periodic intervals per location; (c) converting the divided RF signal data into events of interest, each event of interest defined by attributes including at least the time when the event happened and a unique identifier of a wireless infrastructure device and/or a client device generating the event; (d) repeating (a), (b), and (c) a plurality of times; (e) detecting a change in an event of interest from a wireless infrastructure device and/or a client device; and (f) providing the change in the event of interest detected in (e) to an analyzer for identifying anomalies in the network for use in determining a corrective action to improve network performance, wherein the network performance is defined by one or more of the following attributes: connectivity, throughput, responsiveness, retry percentage, coverage, signal strength, and percentage utilization of the wireless spectrum across multiple wireless technologies. (a) capturing a stream of radio frequency, RF, signal data in the network for said one or more wireless infrastructure devices and said one or more client devices; (b) dividing each stream of RF signal data by time into periodic intervals per location; (c) converting the divided RF signal data into events of interest, each event of interest defined by attributes including at least the time when the event happened and a unique identifier of a wireless infrastructure device and/or a client device generating the event; (d) repeating (a), (b), and (c) a plurality of times; (e) detecting a change in an event of interest from a wireless infrastructure device and/or a client device; and (f) providing the change in the event of interest detected in (e) to an analyzer for identifying anomalies in the network for use in determining a corrective action to improve network performance, wherein the network performance is defined by one or more of the following attributes: connectivity, throughput, responsiveness, retry percentage, coverage, signal strength, and percentage utilization of the wireless spectrum across multiple wireless technologies.
Apparatus for producing haptic feedback, having a piezoelectric actuator and a mechanical structure , wherein the piezoelectric actuator is designed to modify its extension in a first direction (x), and wherein the mechanical structure is designed to deform as a result of a change in the extension of the piezoelectric actuator in such a way that an area of the mechanical structure is moved in relation to the piezoelectric actuator in a second direction (y) which is perpendicular to the first direction (x), characterized in that the mechanical structure has a substructure which is designed not to move in the second direction in relation to the piezoelectric actuator as a result of a change in the extension of the piezoelectric actuator , wherein the haptic feedback is produced by a movement of the area in relation to the substructure , wherein the substructure extends in the first direction (x) in the form of a bar, and wherein the substructure is arranged parallel to the piezoelectric actuator . wherein the piezoelectric actuator is designed to modify its extension in a first direction (x), and wherein the mechanical structure is designed to deform as a result of a change in the extension of the piezoelectric actuator in such a way that an area of the mechanical structure is moved in relation to the piezoelectric actuator in a second direction (y) which is perpendicular to the first direction (x), characterized in that the mechanical structure has a substructure which is designed not to move in the second direction in relation to the piezoelectric actuator as a result of a change in the extension of the piezoelectric actuator , wherein the haptic feedback is produced by a movement of the area in relation to the substructure , wherein the substructure extends in the first direction (x) in the form of a bar, and wherein the substructure is arranged parallel to the piezoelectric actuator .
Device for heating a fluid flowing in at least one pipe able to connect a source point of fluid to at least one point of use of said fluid, comprising, upstream from the point of use , at least one storage system comprising a phase-change material that has a supercooling property adapted to a service temperature of the fluid in such a way as to store a thermal energy captured during a use of the fluid and to restore to the fluid, during a following use, the previously stored thermal energy, said phase-change material being liquid below a melting temperature and solidifying during the following use, characterised in that it comprises an electrical or mechanical trigger controlled by a user, with the trigger generating a shockwave able to change the phase-change material from a supercooled liquid state to a solid state.
A method for manufacturing a laminated iron core product, the method comprising: laminating a plurality of iron core members (W) which are punched from a first metal plate (M2) to form a laminate ; removing oil adhering to the laminate ; laminating a plurality of end surface plates which are punched from a second metal plate (M1) to form a temporary laminate , removing oil adhering to an end surface plate , wherein removing the oil adhering to the end surface plate includes delaminating one end surface plate of the plurality of end surface plates from the temporary laminate one by one and removing oil adhering to the one end surface plate by injecting gas between the uppermost end surface plate of the temporary laminate and the end surface plate adjacent thereto; and disposing the end surface plate on an end surface of the laminate and welding the end surface plate and the laminate . laminating a plurality of iron core members (W) which are punched from a first metal plate (M2) to form a laminate ; removing oil adhering to the laminate ; laminating a plurality of end surface plates which are punched from a second metal plate (M1) to form a temporary laminate , removing oil adhering to an end surface plate , wherein removing the oil adhering to the end surface plate includes delaminating one end surface plate of the plurality of end surface plates from the temporary laminate one by one and removing oil adhering to the one end surface plate by injecting gas between the uppermost end surface plate of the temporary laminate and the end surface plate adjacent thereto; and disposing the end surface plate on an end surface of the laminate and welding the end surface plate and the laminate .
A method comprising: accessing a first quantum register comprising at least one ancilla qubit and a second quantum register comprising one or more qubits, wherein the second quantum register is prepared in an arbitrary quantum state; performing a plurality of phase estimation experiments on the first quantum register, wherein each experiment comprises: preparing the ancilla qubit in a known quantum state; operating one or more times on the first quantum register and the second quantum register with a unitary operator ; and subsequent to the operation of the unitary operator, measuring a state of the ancilla qubit, wherein the outcome of the measurement of the state of the ancilla qubit is represented as a binary random variable; determining, by a phase learning subsystem , an expectation value of the state of the ancilla qubit using the results of the measurements of the state of the ancilla qubit; based on the binary random variable and the determined expectation value, defining the model that represents the probabilities of the values of the binary random variable; and based on the determined expectation value of the state of the ancilla qubit, learning, by the phase learning subsystem, phases of the eigenvalues of the unitary operator by optimizing the model representing probabilities of the value of the binary random variable, wherein the model comprises a mixture model. accessing a first quantum register comprising at least one ancilla qubit and a second quantum register comprising one or more qubits, wherein the second quantum register is prepared in an arbitrary quantum state; performing a plurality of phase estimation experiments on the first quantum register, wherein each experiment comprises: preparing the ancilla qubit in a known quantum state; operating one or more times on the first quantum register and the second quantum register with a unitary operator ; and subsequent to the operation of the unitary operator, measuring a state of the ancilla qubit, wherein the outcome of the measurement of the state of the ancilla qubit is represented as a binary random variable; preparing the ancilla qubit in a known quantum state; operating one or more times on the first quantum register and the second quantum register with a unitary operator ; and subsequent to the operation of the unitary operator, measuring a state of the ancilla qubit, wherein the outcome of the measurement of the state of the ancilla qubit is represented as a binary random variable; determining, by a phase learning subsystem , an expectation value of the state of the ancilla qubit using the results of the measurements of the state of the ancilla qubit; based on the binary random variable and the determined expectation value, defining the model that represents the probabilities of the values of the binary random variable; and based on the determined expectation value of the state of the ancilla qubit, learning, by the phase learning subsystem, phases of the eigenvalues of the unitary operator by optimizing the model representing probabilities of the value of the binary random variable, wherein the model comprises a mixture model.
A refrigerator assembly, comprising a soft freeze assembly disposed within a freezer compartment of the refrigerator assembly, the refrigerator assembly including a fresh food compartment maintained at a first temperature arranged adjacent the freezer compartment maintained at a second temperature, characterized in that the soft freeze assembly including: a support structure comprising a heat transfer opening and being attached to a wall within the freezer compartment ; and a storage bin supported by the support structure and movable with respect to the support structure , the support structure and storage bin being structured to allow air exterior from the freezer compartment to enter the storage bin via the heat transfer opening so as to maintain the storage bin at a third temperature that is colder than the first temperature and warmer than the second temperature when the freezer compartment is in a closed orientation. a support structure comprising a heat transfer opening and being attached to a wall within the freezer compartment ; and a storage bin supported by the support structure and movable with respect to the support structure , the support structure and storage bin being structured to allow air exterior from the freezer compartment to enter the storage bin via the heat transfer opening so as to maintain the storage bin at a third temperature that is colder than the first temperature and warmer than the second temperature when the freezer compartment is in a closed orientation.
A plug connector having a housing and at least one first plug according to a first standard comprising at least a first contact pin (30; 34) and a second contact pin (32; 36), wherein the first contact pin (30; 34) is disposed on a first support member (52; 54) and the second contact pin (32; 36) is disposed on a second support member (58; 60) and wherein the first plug can be moved between a standby position, in which the plug is inside the housing, and a working position, in which the plug is usably located outside the housing, characterized in that a coupling element is provided to which the first support element (52;54) and the second support element (58;60) can be coupled and together can be displaced into the working position.