A light-receiving element , wherein the light-receiving element is a current assisted photonic demodulator (CAPD) sensor in a back-illuminated type, the light-receiving element comprising a pixel array unit , wherein the pixel array unit comprises a discharge region and an effective pixel region , wherein the discharge region is provided on an outer side of the effective pixel region to suppress electron accumulation in a region other than the effective pixel region and wherein the effective pixel region comprises a pixel comprising: an on-chip lens ; an interconnection layer comprising an interconnection (813-817) for driving a transistor in the pixel or reading out a signal from the pixel ; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer , wherein the semiconductor layer includes: a first voltage application unit (73-1) to which a first voltage is applied, a second voltage application unit (73-2) to which a second voltage different from the first voltage is applied, a first charge detection unit (71-1) that is disposed to surround the periphery of the first voltage application unit (73-1) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer , a second charge detection unit (71-2) that is disposed to surround the periphery of the second voltage application unit (73-2) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer . and wherein the effective pixel region comprises a pixel comprising: an on-chip lens ; an interconnection layer comprising an interconnection (813-817) for driving a transistor in the pixel or reading out a signal from the pixel ; and an on-chip lens ; an interconnection layer comprising an interconnection (813-817) for driving a transistor in the pixel or reading out a signal from the pixel ; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer , wherein the semiconductor layer includes: a first voltage application unit (73-1) to which a first voltage is applied, a second voltage application unit (73-2) to which a second voltage different from the first voltage is applied, a first charge detection unit (71-1) that is disposed to surround the periphery of the first voltage application unit (73-1) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer , a second charge detection unit (71-2) that is disposed to surround the periphery of the second voltage application unit (73-2) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer . a first voltage application unit (73-1) to which a first voltage is applied, a second voltage application unit (73-2) to which a second voltage different from the first voltage is applied, a first charge detection unit (71-1) that is disposed to surround the periphery of the first voltage application unit (73-1) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer , a second charge detection unit (71-2) that is disposed to surround the periphery of the second voltage application unit (73-2) and detects the amount of signal carriers generated due to photoelectric conversion by the semiconductor layer . <EOS>