An insulated gate bipolar transistor comprising at least following layers from a source electrode on an emitter side to a collector electrode on a collector side opposite to the emitter side : - a source layer of a first conductivity type; - a base layer of a second conductivity type, which is different from the first conductivity type, wherein the source layer and the base layer electrically contact the source electrode ; - a drift layer of the first conductivity type; and - a collector layer of the second conductivity type, which is arranged between the drift layer and the collector electrode and which electrically contacts the collector electrode ; the insulated gate bipolar transistor further comprising: - at least two trench gate electrodes extending through the base layer into the drift layer , each of the at least two trench gate electrodes comprises an electrically conductive gate layer , which is arranged lateral to the base layer and a gate insulating layer , which separates the gate layer from any doped layer; wherein a channel is formable between the source layer , the base layer and the drift layer and wherein the source layer is arranged at least on one side of each of a trench gate electrode ; characterized by - at least one trench Schottky electrode adjacent to one of the at least two trench gate electrodes and comprising an electrically conductive Schottky layer , which is arranged lateral to the base layer and extends through the base layer into the drift layer , wherein the Schottky layer is electrically connected to the source electrode , and a Schottky insulating layer , which separates the Schottky layer from the base layer ; and - collection areas of the second conductivity type arranged at a trench gate electrode bottom of the at least two trench gate electrodes and at a trench Schottky electrode bottom of the at least one trench Schottky electrode , wherein the collection areas are located in the drift layer and are laterally separated from each other by the drift layer ; wherein the Schottky layer forms a Schottky contact to the collection area at a contact area. - a source layer of a first conductivity type; - a base layer of a second conductivity type, which is different from the first conductivity type, wherein the source layer and the base layer electrically contact the source electrode ; - a drift layer of the first conductivity type; and - a collector layer of the second conductivity type, which is arranged between the drift layer and the collector electrode and which electrically contacts the collector electrode ; - at least two trench gate electrodes extending through the base layer into the drift layer , each of the at least two trench gate electrodes comprises an electrically conductive gate layer , which is arranged lateral to the base layer and a gate insulating layer , which separates the gate layer from any doped layer; wherein a channel is formable between the source layer , the base layer and the drift layer and wherein the source layer is arranged at least on one side of each of a trench gate electrode ; - at least one trench Schottky electrode adjacent to one of the at least two trench gate electrodes and comprising an electrically conductive Schottky layer , which is arranged lateral to the base layer and extends through the base layer into the drift layer , wherein the Schottky layer is electrically connected to the source electrode , and a Schottky insulating layer , which separates the Schottky layer from the base layer ; and - collection areas of the second conductivity type arranged at a trench gate electrode bottom of the at least two trench gate electrodes and at a trench Schottky electrode bottom of the at least one trench Schottky electrode , wherein the collection areas are located in the drift layer and are laterally separated from each other by the drift layer ; wherein the Schottky layer forms a Schottky contact to the collection area at a contact area. <EOS>