An electronic device comprising: a solid shaped volume of a polymeric binder ; suspended within the polymeric binder , a semiconductor die having a first face being a bottom face, a second face being a top face and being opposite the first face and at least one sidewall spanning the first and second faces, the semiconductor die being a bare-die light-emitting element comprising a plurality of active semiconductor layers that cooperatively emit light, wherein: (i) at least a portion of the polymeric binder is transparent to a wavelength of light emitted by the light-emitting element, and (ii) the polymeric binder , having a third face being a bottom face, contains therein a wavelength-conversion material for absorption of at least a portion of light emitted from the light-emitting element and emission of converted light having a different wavelength, converted light and unconverted light emitted by the light-emitting element combining to form mixed light; disposed on the first face of the semiconductor die , at least two spaced-apart contacts each having a terminal end, at least a portion of each terminal end not being covered by the polymeric binder , each of the contacts contacting a different active semiconductor layer of the semiconductor die ; and a reflecting layer adhered to the third face of the polymer binder wherein a gap in a plan view of the third face is formed between the reflective layer and the light-emitting element, characterised in that the reflecting layer surrounds the light emitting element and the width of the gap has a value in the range of 0 μm - 300 μm. a solid shaped volume of a polymeric binder ; suspended within the polymeric binder , a semiconductor die having a first face being a bottom face, a second face being a top face and being opposite the first face and at least one sidewall spanning the first and second faces, a first face being a bottom face, a second face being a top face and being opposite the first face and at least one sidewall spanning the first and second faces, the semiconductor die being a bare-die light-emitting element comprising a plurality of active semiconductor layers that cooperatively emit light, wherein: (i) at least a portion of the polymeric binder is transparent to a wavelength of light emitted by the light-emitting element, and (ii) the polymeric binder , having a third face being a bottom face, contains therein a wavelength-conversion material for absorption of at least a portion of light emitted from the light-emitting element and emission of converted light having a different wavelength, converted light and unconverted light emitted by the light-emitting element combining to form mixed light; (i) at least a portion of the polymeric binder is transparent to a wavelength of light emitted by the light-emitting element, and (ii) the polymeric binder , having a third face being a bottom face, contains therein a wavelength-conversion material for absorption of at least a portion of light emitted from the light-emitting element and emission of converted light having a different wavelength, converted light and unconverted light emitted by the light-emitting element combining to form mixed light; disposed on the first face of the semiconductor die , at least two spaced-apart contacts each having a terminal end, at least a portion of each terminal end not being covered by the polymeric binder , each of the contacts contacting a different active semiconductor layer of the semiconductor die ; and a reflecting layer adhered to the third face of the polymer binder wherein a gap in a plan view of the third face is formed between the reflective layer and the light-emitting element, characterised in that the reflecting layer surrounds the light emitting element and the width of the gap has a value in the range of 0 μm - 300 μm. <EOS>