A method comprising: providing a substrate comprising a first resist layer patterned to expose an opening region , wherein the opening region comprises a central opening portion , a first elongated opening portion having a length that extends from a first side of the central opening portion along a first direction, and a second elongated portion having a length that extends from a second side of the central opening portion along a second direction different from the first direction, wherein a width of the first elongated portion is smaller than a length of the first side of the central opening, and a width of the second elongated portion is smaller than a length of the second side of the central opening; depositing a first superconductor material on the patterned resist layer at a first non-normal angle with respect to the substrate to form a first superconductor layer within the central opening portion and the first elongated opening portion of the opening region; forming an insulator layer on a portion of the first superconductor layer; depositing a second superconductor material on the insulator layer and the patterned resist layer at a second non-normal angle with respect to the substrate to form a second superconductor layer within the central opening portion and the second elongated portion of the opening region, wherein the first superconductor layer, the insulator layer, and the second superconductor layer within the central opening portion provide a superconductor tunnel junction ; and forming a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second separate contact to the superconductor tunnel junction, respectively. providing a substrate comprising a first resist layer patterned to expose an opening region , wherein the opening region comprises a central opening portion , a first elongated opening portion having a length that extends from a first side of the central opening portion along a first direction, and a second elongated portion having a length that extends from a second side of the central opening portion along a second direction different from the first direction, wherein a width of the first elongated portion is smaller than a length of the first side of the central opening, and a width of the second elongated portion is smaller than a length of the second side of the central opening; depositing a first superconductor material on the patterned resist layer at a first non-normal angle with respect to the substrate to form a first superconductor layer within the central opening portion and the first elongated opening portion of the opening region; forming an insulator layer on a portion of the first superconductor layer; depositing a second superconductor material on the insulator layer and the patterned resist layer at a second non-normal angle with respect to the substrate to form a second superconductor layer within the central opening portion and the second elongated portion of the opening region, wherein the first superconductor layer, the insulator layer, and the second superconductor layer within the central opening portion provide a superconductor tunnel junction ; and forming a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second separate contact to the superconductor tunnel junction, respectively. <EOS>