A resonant pressure sensor (1A; 1B) of a pressure sensing unit , comprising: a housing ; a housing-fixed portion fixed to the housing ; a substrate (3; 3A; 3B; 3C) comprising: a substrate-fixed portion fixed to the housing-fixed portion ; and a substrate-separated portion (32; 32A; 32B; 32C) separated from the housing-fixed portion and extending from the substrate-fixed portion , wherein a gap (S) is defined between the housing-fixed portion and the substrate (3; 3A; 3B; 3C), the gap (S) being configured to receive a pressure-receiving fluid (F; K) enveloping the substrate (3; 3A; 3B; 3C); a first resonator disposed in the substrate-separated portion (32; 32A; 32B; 32C) and configured to detect a change of a first resonance frequency based on a strain in the substrate (3; 3A; 3B; 3C) caused by static pressure applied by the pressure-receiving fluid (F; K); the resonant pressure sensor characterized by a second resonator disposed in the substrate , wherein the second resonator is configured to detect a change of a second resonance frequency based on the strain in the substrate caused by the static pressure applied by the pressure-receiving fluid (F), and wherein the second resonator has a pressure sensitivity of the second resonance frequency that differs, according to an internal temperature of the pressure sensing unit , from a pressure sensitivity of the first resonance frequency of the first resonator ; and a processor configured to measure the static pressure based on the detected change of the first resonance frequency and to correct the static pressure according to the internal temperature of the pressure sensor based on the difference between the second resonance frequency and the first resonance frequency. a housing ; a housing-fixed portion fixed to the housing ; a substrate (3; 3A; 3B; 3C) comprising: a substrate-fixed portion fixed to the housing-fixed portion ; and a substrate-separated portion (32; 32A; 32B; 32C) separated from the housing-fixed portion and extending from the substrate-fixed portion , wherein a gap (S) is defined between the housing-fixed portion and the substrate (3; 3A; 3B; 3C), the gap (S) being configured to receive a pressure-receiving fluid (F; K) enveloping the substrate (3; 3A; 3B; 3C); a substrate-fixed portion fixed to the housing-fixed portion ; and a substrate-separated portion (32; 32A; 32B; 32C) separated from the housing-fixed portion and extending from the substrate-fixed portion , wherein a gap (S) is defined between the housing-fixed portion and the substrate (3; 3A; 3B; 3C), the gap (S) being configured to receive a pressure-receiving fluid (F; K) enveloping the substrate (3; 3A; 3B; 3C); a first resonator disposed in the substrate-separated portion (32; 32A; 32B; 32C) and configured to detect a change of a first resonance frequency based on a strain in the substrate (3; 3A; 3B; 3C) caused by static pressure applied by the pressure-receiving fluid (F; K); the resonant pressure sensor characterized by a second resonator disposed in the substrate , wherein the second resonator is configured to detect a change of a second resonance frequency based on the strain in the substrate caused by the static pressure applied by the pressure-receiving fluid (F), and wherein the second resonator has a pressure sensitivity of the second resonance frequency that differs, according to an internal temperature of the pressure sensing unit , from a pressure sensitivity of the first resonance frequency of the first resonator ; and a processor configured to measure the static pressure based on the detected change of the first resonance frequency and to correct the static pressure according to the internal temperature of the pressure sensor based on the difference between the second resonance frequency and the first resonance frequency. <EOS>