A memory device, comprising: a memory array arranged in a plurality of rows and columns including a plurality of memory cell groups , where each of the memory cell groups includes N non-volatile memory cells , where N is an integer greater than or equal to 2; and a control circuitry that is configured to, for each of the memory cell groups: program each of the non-volatile memory cells in the memory cell group to a particular program state, perform multiple read operations on each of the non-volatile memory cells in the memory cell group, identify one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply program all except the identified one of the non-volatile memory cells in the memory cell group with a high number of electrons well beyond a chosen operating range for storing user data, so that the non-volatile memory cells in the memory cell group do not contribute to any detected current during read operations, except the identified one non-volatile memory cell, and program the one identified non-volatile memory cell in the memory cell group with user data such that each memory cell group is configured to operate as a single memory cell for storing user data. a plurality of memory cell groups , where each of the memory cell groups includes N non-volatile memory cells , where N is an integer greater than or equal to 2; and a control circuitry that is configured to, for each of the memory cell groups: program each of the non-volatile memory cells in the memory cell group to a particular program state, perform multiple read operations on each of the non-volatile memory cells in the memory cell group, identify one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply program all except the identified one of the non-volatile memory cells in the memory cell group with a high number of electrons well beyond a chosen operating range for storing user data, so that the non-volatile memory cells in the memory cell group do not contribute to any detected current during read operations, except the identified one non-volatile memory cell, and program the one identified non-volatile memory cell in the memory cell group with user data such that each memory cell group is configured to operate as a single memory cell for storing user data. program each of the non-volatile memory cells in the memory cell group to a particular program state, perform multiple read operations on each of the non-volatile memory cells in the memory cell group, identify one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply program all except the identified one of the non-volatile memory cells in the memory cell group with a high number of electrons well beyond a chosen operating range for storing user data, so that the non-volatile memory cells in the memory cell group do not contribute to any detected current during read operations, except the identified one non-volatile memory cell, and program the one identified non-volatile memory cell in the memory cell group with user data such that each memory cell group is configured to operate as a single memory cell for storing user data. <EOS>