An image sensor , comprising: unit pixel groups repeatedly arranged along a column and a row, wherein each unit pixel group includes: at least one first pixel configured to sense light in a visible light wavelength spectrum; and a second pixel spaced apart from the first pixel in a horizontal direction and configured to sense light in an infrared light wavelength spectrum, the second pixel including a first photoelectric device defined in the second pixel, the first photoelectric device including, a first electrode , a second electrode , and an infrared light absorption layer between the first electrode and the second electrode , the infrared light absorption layer being provided on an entirety of a surface of the unit pixel group and being configured to selectively absorb light in the infrared wavelength spectrum; and wherein the first pixel includes a third pixel, a fourth pixel, and a fifth pixel, wherein the third pixel includes a first photo-sensing device configured to selectively sense first visible light, the first visible light having a maximum absorption wavelength of 500 nm to 580 nm, wherein the fourth pixel includes a second photo-sensing device configured to selectively sense second visible light, the second visible light having a maximum absorption wavelength of greater than or equal to 400 nm and less than 500 nm, and wherein the fifth pixel includes a third photo-sensing device configured to selectively sense third visible light, the third visible light having a maximum absorption wavelength of greater than 580 nm and less than or equal to 700 nm; and characterised in that the second electrode is separated in the horizontal direction from the first pixel and the infrared light absorption layer includes a photoelectric conversion region and a non-photoelectric conversion region , the non-photoelectric conversion region being in the first pixel, and the photoelectric conversion region being between the first electrode and the second electrode in the second pixel. at least one first pixel configured to sense light in a visible light wavelength spectrum; and a second pixel spaced apart from the first pixel in a horizontal direction and configured to sense light in an infrared light wavelength spectrum, the second pixel including a first photoelectric device defined in the second pixel, the first photoelectric device including, a first electrode , a second electrode , and an infrared light absorption layer between the first electrode and the second electrode , the infrared light absorption layer being provided on an entirety of a surface of the unit pixel group and being configured to selectively absorb light in the infrared wavelength spectrum; and wherein the first pixel includes a third pixel, a fourth pixel, and a fifth pixel, wherein the third pixel includes a first photo-sensing device configured to selectively sense first visible light, the first visible light having a maximum absorption wavelength of 500 nm to 580 nm, wherein the fourth pixel includes a second photo-sensing device configured to selectively sense second visible light, the second visible light having a maximum absorption wavelength of greater than or equal to 400 nm and less than 500 nm, and wherein the fifth pixel includes a third photo-sensing device configured to selectively sense third visible light, the third visible light having a maximum absorption wavelength of greater than 580 nm and less than or equal to 700 nm; and characterised in that the second electrode is separated in the horizontal direction from the first pixel and the infrared light absorption layer includes a photoelectric conversion region and a non-photoelectric conversion region , the non-photoelectric conversion region being in the first pixel, and the photoelectric conversion region being between the first electrode and the second electrode in the second pixel. <EOS>