An optoelectronic semiconductor chip comprising a carrier plate and an optoelectronic semiconductor body having - a front side intended for emitting and/or receiving electromagnetic radiation, - a rear side opposite the front side , and - the rear side of the optoelectronic semiconductor body faces the carrier plate , the optoelectronic semiconductor body being attached to the carrier plate by means of a metal , and - the metal fills at least a first portion of a recess ; - an active semiconductor layer sequence comprising, in the direction from the rear side to the front side , a layer of a first conductivity type , an active layer and a layer of a second conductivity type in this order, wherein - the semiconductor layer sequence comprises at least the recess extending into the semiconductor layer sequence from the rear side , wherein the recess is completely enclosed by a continuous path of the active layer in a lateral direction parallel to the main direction of extension of the semiconductor layer sequence ; - said recess comprises said first portion which extends through the layer of the first conductivity type and the active layer into the layer of the second conductivity type and has a bottom surface in the layer of the second conductivity type ; - the recess comprises a second portion with an opening , wherein in the lateral direction the opening does not completely enclose an area of the active layer and wherein the opening is completely enclosed by an outer contour of the bottom surface of the first portion in plan view of the rear side and the second portion extends from the opening in the direction towards the front side and runs at least in the layer of the second conductivity type , characterized in that the metal is a solder. - a front side intended for emitting and/or receiving electromagnetic radiation, - a rear side opposite the front side , and - the rear side of the optoelectronic semiconductor body faces the carrier plate , the optoelectronic semiconductor body being attached to the carrier plate by means of a metal , and - the metal fills at least a first portion of a recess ; - an active semiconductor layer sequence comprising, in the direction from the rear side to the front side , a layer of a first conductivity type , an active layer and a layer of a second conductivity type in this order, wherein - the semiconductor layer sequence comprises at least the recess extending into the semiconductor layer sequence from the rear side , wherein the recess is completely enclosed by a continuous path of the active layer in a lateral direction parallel to the main direction of extension of the semiconductor layer sequence ; - said recess comprises said first portion which extends through the layer of the first conductivity type and the active layer into the layer of the second conductivity type and has a bottom surface in the layer of the second conductivity type ; - the recess comprises a second portion with an opening , wherein in the lateral direction the opening does not completely enclose an area of the active layer and wherein the opening is completely enclosed by an outer contour of the bottom surface of the first portion in plan view of the rear side and the second portion extends from the opening in the direction towards the front side and runs at least in the layer of the second conductivity type , characterized in that the metal is a solder. <EOS>