mhurhangee/patent-ind-claim-en huggingface dataset:
A resource manager for a telecommunication system , the resource manager comprising: a memory; and a processor programmed to execute instructions stored in the memory, such that the processor is configured to: determine a future location of a first mobile node, wherein the future location of the first mobile node is a location of the first mobile node at a future time, determine a future location of a second mobile node, wherein the second mobile node is a moving node on a ground surface, and wherein the future location of the second mobile is a location where the second mobile node will be in communication with the first mobile node at the future time; associate the future location of the first mobile node and the future location of the second mobile node to the future time; determine a routing path that includes communication between the first mobile node and the second mobile node at the future time, wherein the routing path associates a destination address tag with a beam defining a beam coverage area and an output port, and wherein the destination address tag includes a hierarchical beam address or a single beam address; update a routing table with the routing path; and transmit the routing table to the first mobile node and the second mobile node , or transmit the routing table for upload to the first mobile node and the second mobile node ; wherein, when transmitting a packet, by the first mobile node , using the destination address tag, the first mobile node routes on one part of a destination address in the packet based on a distance of the first mobile node to a particular beam. determine a future location of a first mobile node, wherein the future location of the first mobile node is a location of the first mobile node at a future time, determine a future location of a second mobile node, wherein the second mobile node is a moving node on a ground surface, and wherein the future location of the second mobile is a location where the second mobile node will be in communication with the first mobile node at the future time; associate the future location of the first mobile node and the future location of the second mobile node to the future time; determine a routing path that includes communication between the first mobile node and the second mobile node at the future time, wherein the routing path associates a destination address tag with a beam defining a beam coverage area and an output port, and wherein the destination address tag includes a hierarchical beam address or a single beam address; update a routing table with the routing path; and transmit the routing table to the first mobile node and the second mobile node , or transmit the routing table for upload to the first mobile node and the second mobile node ; wherein, when transmitting a packet, by the first mobile node , using the destination address tag, the first mobile node routes on one part of a destination address in the packet based on a distance of the first mobile node to a particular beam.
A cleaning pad comprising: a liquid pervious hydrophobic floor sheet having an inwardly facing surface and an outwardly facing surface opposed thereto, an absorbent core juxtaposed with said inwardly facing surface of said floor sheet and comprising absorbent gelling material AGM , and characterized by further comprising a smoothing strip joined to said outwardly facing surface of said floor sheet , said smoothing strip having a width of 13 mm to 100 mm, said smoothing strip comprising a cellulose fiber lamina and a synthetic fiber lamina joined in a laminate, said cellulose fiber lamina facing outwardly from said cleaning pad and said synthetic fiber lamina being in contacting relationship with said floor sheet . a liquid pervious hydrophobic floor sheet having an inwardly facing surface and an outwardly facing surface opposed thereto, an absorbent core juxtaposed with said inwardly facing surface of said floor sheet and comprising absorbent gelling material AGM , and characterized by further comprising a smoothing strip joined to said outwardly facing surface of said floor sheet , said smoothing strip having a width of 13 mm to 100 mm, said smoothing strip comprising a cellulose fiber lamina and a synthetic fiber lamina joined in a laminate, said cellulose fiber lamina facing outwardly from said cleaning pad and said synthetic fiber lamina being in contacting relationship with said floor sheet .
A system for the treatment of targets under the skin of a patient, comprising: a laser device for emitting a first series of laser pulses towards an area of the skin of a patient, where a target to be reached by said laser pulses is located under said skin; a cooling system of said area of the skin by means of a cooling fluid; a first temperature sensor configured to measure a first temperature of said area of skin; a second temperature sensor configured to measure the temperature of said cooling fluid; wherein the system is configured to receive the signals from said first and second temperature sensors; wherein the system is configured to control the laser device to emit a first series of laser pulses having predetermined power, duration and spacing; wherein said first temperature sensor is configured to measure the temperature of said area of skin, following said first series of laser pulses; and wherein the system is configured to calculate a the- predicted temperature reached in said area of the skin following subsequent the- emission of a second series of pulses having said predetermined power, duration and spacing. a laser device for emitting a first series of laser pulses towards an area of the skin of a patient, where a target to be reached by said laser pulses is located under said skin; a cooling system of said area of the skin by means of a cooling fluid; a first temperature sensor configured to measure a first temperature of said area of skin; a second temperature sensor configured to measure the temperature of said cooling fluid; wherein the system is configured to receive the signals from said first and second temperature sensors; wherein the system is configured to control the laser device to emit a first series of laser pulses having predetermined power, duration and spacing; wherein said first temperature sensor is configured to measure the temperature of said area of skin, following said first series of laser pulses; and wherein the system is configured to calculate a the- predicted temperature reached in said area of the skin following subsequent the- emission of a second series of pulses having said predetermined power, duration and spacing.
Lobe lance for a gas turbine combustor, comprising a plurality of N (N ≥ 4) lobe fingers (22a-d), whereby each of said lobe fingers (22a-d) is configured as a streamlined body which has a streamlined cross-sectional profile, whereby said body has two lateral surfaces essentially parallel to a direction of hot gas flow, whereby said lateral surfaces are joined at their upstream side by a leading edge and joined at their downstream side forming a trailing edge , whereby a plurality of nozzles for injecting a gaseous and/or liquid fuel mixed with air is distributed along said trailing edge , and whereby lobes running between said nozzles are provided at said trailing edge for improving the mixing quality and reducing pressure loss in said combustor, wherein the lobes of each lobe finger (22a-d) can have one of two opposite orientations (R, L) with respect to said flow direction and that- the lobes of all lobe fingers (22a-d) follow a predetermined pattern of orientation across the lobe fingers (22a-d), wherein at least one pair of neighboring lobe fingers (22a-d) has the same lobe orientation resulting in a grouped lobe arrangement (...LL...or...RR...) such that at least two of the vortices generated by the lobe shape downstream of said lobe fingers (22a-d) combine, and wherein N = N R + N L with N R being the number of lobe fingers having a first lobe orientation (R), and N L being the number of lobe fingers having a second lobe orientation (L) opposite to said first lobe orientation, characterized in that N R and N L are both at least 1.
A pharmaceutical product comprising fluticasone furoate for use in the treatment of COPD in a patient, wherein the patient has a blood eosinophil count of ≥150 cells/μL and wherein the pharmaceutical product reduces the rate of decline in lung function in the patient.
An ultrasonic diagnostic imaging system which produces attenuation coefficient maps of an image field comprising: an ultrasound probe having a transducer array adapted to acquire ultrasonic echo signals from an image field; a beamformer adapted to process the ultrasonic echo signals to produce coherent echo signals for an ultrasound image of the image field; and an attenuation coefficient processor , coupled to the beamformer, and adapted to estimate attenuation coefficient values for maps of attenuation coefficients; characterized in that the system further comprises an elevation blockage detector processor , coupled to the attenuation coefficient processor, and adapted to produce a metric developed from estimates of attenuation coefficients produced by two different estimation methods, wherein the elevation blockage detector processor is further adapted to identify the presence of elevation aperture blockage when one or more criteria based on the metric are satisfied; and wherein the system is further adapted to produce an alert in response to the identification of the presence of elevation aperture blockage. an ultrasound probe having a transducer array adapted to acquire ultrasonic echo signals from an image field; a beamformer adapted to process the ultrasonic echo signals to produce coherent echo signals for an ultrasound image of the image field; and an attenuation coefficient processor , coupled to the beamformer, and adapted to estimate attenuation coefficient values for maps of attenuation coefficients; characterized in that the system further comprises an elevation blockage detector processor , coupled to the attenuation coefficient processor, and adapted to produce a metric developed from estimates of attenuation coefficients produced by two different estimation methods, wherein the elevation blockage detector processor is further adapted to identify the presence of elevation aperture blockage when one or more criteria based on the metric are satisfied; and wherein the system is further adapted to produce an alert in response to the identification of the presence of elevation aperture blockage.
Capping head for the application of caps on containers or bottles, comprising a hollow housing internally defining at least a first chamber in which a shaft rotating about a longitudinal axis (A) is housed, the rotating shaft being coupled with the hollow housing through the interposition of a magnetic or electromagnetic decoupling assembly configured to generate thermal dissipation power and comprising at least a rotor and a stator , the magnetic or electromagnetic decoupling assembly being suitable to allow a relative rotation between the hollow housing and the rotating shaft when the rotating shaft is subjected to a braking torque exceeding a threshold torque, characterised in that inside the hollow housing there are means for enhancing the thermal dissipation power, said means comprising elements which are different from the rotor and the stator and on which eddy currents flow.
A linear fader , comprising: a slider that is configured to slide along a rail , wherein the slider comprises a magnet ; a plurality of coils spaced along a length of the rail; one or more sensors configured to detect a position of the slider along the rail; and control circuitry operatively coupled to the plurality of coils and the one or more sensors, wherein the control circuitry is configured to: receive a first location of the slider from at least one of the one or more sensors; receive a signal corresponding to a desired location of the slider; cause a first electrical current to pass through the plurality of coils, thereby generating a force on the slider in a direction toward the desired location; and characterized in that the control circuitry is further configured to control a second electrical current that passes through the plurality of coils, wherein a magnetic field of the second electrical current through the plurality of coils resists movement of the slider along the rail. a slider that is configured to slide along a rail , wherein the slider comprises a magnet ; a plurality of coils spaced along a length of the rail; one or more sensors configured to detect a position of the slider along the rail; and control circuitry operatively coupled to the plurality of coils and the one or more sensors, wherein the control circuitry is configured to: receive a first location of the slider from at least one of the one or more sensors; receive a signal corresponding to a desired location of the slider; cause a first electrical current to pass through the plurality of coils, thereby generating a force on the slider in a direction toward the desired location; and characterized in that the control circuitry is further configured to control a second electrical current that passes through the plurality of coils, wherein a magnetic field of the second electrical current through the plurality of coils resists movement of the slider along the rail. receive a first location of the slider from at least one of the one or more sensors; receive a signal corresponding to a desired location of the slider; cause a first electrical current to pass through the plurality of coils, thereby generating a force on the slider in a direction toward the desired location; and characterized in that the control circuitry is further configured to control a second electrical current that passes through the plurality of coils, wherein a magnetic field of the second electrical current through the plurality of coils resists movement of the slider along the rail.
A battery module comprising: at least two cell assemblies including a plurality of secondary batteries electrically connected to each other and stacked in a front-rear direction (Y); a module housing having an internal space in which the cell assembly is received, and a gas passage on at least one of left side or right side of the cell assembly for circulation of gas generated from the cell assembly ; and a flame retardant plate including a body formed in a plate shape, wherein said flame retardant plate is interposed between the at least two cell assemblies , wherein the flame retardant plate has a multilayer structure including at least one of a flame retardant layer that is hard to burn, a heat insulating layer configured to prevent heat transfer, an expandable layer that expands its volume at a predetermined temperature, and a flame barrier extending in a left-right direction (X) from at least one of left end or right end of the body and disposed in a part of the gas passage , the flame barrier having a plurality of gas vent holes that are open in the front-rear direction (Y) to allow gas generated from the cell assembly to flow. at least two cell assemblies including a plurality of secondary batteries electrically connected to each other and stacked in a front-rear direction (Y); a module housing having an internal space in which the cell assembly is received, and a gas passage on at least one of left side or right side of the cell assembly for circulation of gas generated from the cell assembly ; and a flame retardant plate including a body formed in a plate shape, wherein said flame retardant plate is interposed between the at least two cell assemblies , wherein the flame retardant plate has a multilayer structure including at least one of a flame retardant layer that is hard to burn, a heat insulating layer configured to prevent heat transfer, an expandable layer that expands its volume at a predetermined temperature, and a flame barrier extending in a left-right direction (X) from at least one of left end or right end of the body and disposed in a part of the gas passage , the flame barrier having a plurality of gas vent holes that are open in the front-rear direction (Y) to allow gas generated from the cell assembly to flow.
A cell comprising: a metal plate comprising a pair of surfaces, which are a first surface and a second surface located on opposite side of the metal plate; an element portion disposed on the first surface and comprising a first electrode layer , a solid electrolyte layer located on the first electrode layer , and a second electrode layer located on the solid electrolyte layer ; and an intermediate layer located between the first surface and the first electrode layer , the intermediate layer having a plurality of first through holes penetrating through the intermediate layer in a thickness direction, wherein the intermediate layer has pores in addition to the plurality of first through holes, and wherein a porosity of the intermediate layer is smaller than a porosity of the first electrode layer . a metal plate comprising a pair of surfaces, which are a first surface and a second surface located on opposite side of the metal plate; an element portion disposed on the first surface and comprising a first electrode layer , a solid electrolyte layer located on the first electrode layer , and a second electrode layer located on the solid electrolyte layer ; and an intermediate layer located between the first surface and the first electrode layer , the intermediate layer having a plurality of first through holes penetrating through the intermediate layer in a thickness direction, wherein the intermediate layer has pores in addition to the plurality of first through holes, and wherein a porosity of the intermediate layer is smaller than a porosity of the first electrode layer .
A semiconductor device structure , comprising: a substrate having a substrate base comprising a first dopant type and having a substrate base surface; a semiconductor layer disposed on the substrate base surface, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer , the semiconductor plug extending from the upper surface of the semiconductor layer , the semiconductor plug having a first boundary and a second boundary disposed opposite the first boundary , the first boundary and the second boundary being formed within the semiconductor layer , wherein the first boundary and second boundary extend perpendicularly to the substrate base surface, a trench filled with a material and having a first trench sidewall and a second trench sidewall, the first trench sidewall and second trench sidewall defining a first interface and a second interface, respectively, with the semiconductor layer , wherein the first trench sidewall and the second trench sidewall extend perpendicularly to the substrate base surface; a diffused region extending within the semiconductor layer from the first trench sidewall and the second trench sidewall , characterised in that the first boundary and the second boundary define a boundary between the semiconductor plug and the semiconductor layer . a substrate having a substrate base comprising a first dopant type and having a substrate base surface; a semiconductor layer disposed on the substrate base surface, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer , the semiconductor plug extending from the upper surface of the semiconductor layer , the semiconductor plug having a first boundary and a second boundary disposed opposite the first boundary , the first boundary and the second boundary being formed within the semiconductor layer , wherein the first boundary and second boundary extend perpendicularly to the substrate base surface, a trench filled with a material and having a first trench sidewall and a second trench sidewall, the first trench sidewall and second trench sidewall defining a first interface and a second interface, respectively, with the semiconductor layer , wherein the first trench sidewall and the second trench sidewall extend perpendicularly to the substrate base surface; a diffused region extending within the semiconductor layer from the first trench sidewall and the second trench sidewall , characterised in that
A memory array (320; 430; 544), comprising: a stack comprising a plurality of first conductive lines (822; 1022) at a plurality of levels, wherein the plurality of first conductive lines are separated from one another by an insulation material and a storage element material ; and a conductive extension formed in a via formed through the stack; wherein, at each one of the plurality of levels: the storage element material corresponding to the level extends to a sidewall of the via; and a conductive material of the conductive line corresponding to the level is recessed with respect to the sidewall of the via such that the storage element material forms a protrusion with respect to the conductive line (822; 1022) corresponding to the level; characterised in that the memory array further comprises a cell select device material formed in the via between the conductive extension and the storage element material . a stack comprising a plurality of first conductive lines (822; 1022) at a plurality of levels, wherein the plurality of first conductive lines are separated from one another by an insulation material and a storage element material ; and a conductive extension formed in a via formed through the stack; wherein, at each one of the plurality of levels: the storage element material corresponding to the level extends to a sidewall of the via; and a conductive material of the conductive line corresponding to the level is recessed with respect to the sidewall of the via such that the storage element material forms a protrusion with respect to the conductive line (822; 1022) corresponding to the level; characterised in that the memory array further comprises a cell select device material formed in the via between the conductive extension and the storage element material . the storage element material corresponding to the level extends to a sidewall of the via; and a conductive material of the conductive line corresponding to the level is recessed with respect to the sidewall of the via such that the storage element material forms a protrusion with respect to the conductive line (822; 1022) corresponding to the level; characterised in that the memory array further comprises a cell select device material formed in the via between the conductive extension and the storage element material .