A method of forming a silicon-containing film on a substrate, the method comprising subjecting a vapor of a silicon precursor comprising trichlorodisilane to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate, wherein the method comprises subjecting a first vapor of the silicon precursor and a second vapor of a nitrogen precursor comprising molecular nitrogen, ammonia, amine, hydrazine, or a combination of any two or three thereof to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate, wherein the silicon-containing film is a silicon nitrogen film, and further wherein the substrate is heated and disposed in a deposition reactor that is configured for (a) atomic layer deposition, the method comprising repeatedly feeding the first vapor of a silicon precursor, purging with an inert gas, feeding the second vapor into the deposition reactor, and purging with an inert gas so as to form the silicon-containing film on the heated substrate using atomic layer deposition, wherein the atomic layer deposition comprises plasma enhanced atomic layer deposition or thermal atomic layer deposition and wherein the feeds may be the same or different; or (b) chemical vapor deposition, the method comprising feeding the first vapor of a silicon precursor and feeding the second vapor into the deposition reactor so as to form the silicon-containing film on the heated substrate using chemical vapor deposition, wherein the feeds may be the same or different. wherein the method comprises subjecting a first vapor of the silicon precursor and a second vapor of a nitrogen precursor comprising molecular nitrogen, ammonia, amine, hydrazine, or a combination of any two or three thereof to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate, wherein the silicon-containing film is a silicon nitrogen film, and further wherein the substrate is heated and disposed in a deposition reactor that is configured for (a) atomic layer deposition, the method comprising repeatedly feeding the first vapor of a silicon precursor, purging with an inert gas, feeding the second vapor into the deposition reactor, and purging with an inert gas so as to form the silicon-containing film on the heated substrate using atomic layer deposition, wherein the atomic layer deposition comprises plasma enhanced atomic layer deposition or thermal atomic layer deposition and wherein the feeds may be the same or different; or (b) chemical vapor deposition, the method comprising feeding the first vapor of a silicon precursor and feeding the second vapor into the deposition reactor so as to form the silicon-containing film on the heated substrate using chemical vapor deposition, wherein the feeds may be the same or different. (a) atomic layer deposition, the method comprising repeatedly feeding the first vapor of a silicon precursor, purging with an inert gas, feeding the second vapor into the deposition reactor, and purging with an inert gas so as to form the silicon-containing film on the heated substrate using atomic layer deposition, wherein the atomic layer deposition comprises plasma enhanced atomic layer deposition or thermal atomic layer deposition and wherein the feeds may be the same or different; or (b) chemical vapor deposition, the method comprising feeding the first vapor of a silicon precursor and feeding the second vapor into the deposition reactor so as to form the silicon-containing film on the heated substrate using chemical vapor deposition, wherein the feeds may be the same or different. <EOS>