An organic light-emitting diode display, comprising: a substrate (SUB) on which an emission area (AA) and a non-emission area (NA) are defined; a driving thin film transistor (DT) disposed in the non-emission area (NA); a passivation layer (IN2) disposed on the driving thin film transistor (DT); a storage capacitor (STG) having a first storage capacitor electrode (SG1) and a second storage capacitor electrode (SG2) in the emission area (AA), wherein the second storage capacitor electrode (SG2) is superposed on the first storage capacitor electrode (SG1), and wherein the first and second storage capacitor electrodes (SG1; SG2) are formed of a transparent conductive material and have the passivation layer (IN2) interposed therebetween; an overcoat layer (OC) disposed on the storage capacitor (STG); and an organic light-emitting diode (OLED) including an anode (ANO), a cathode (CAT) superposed on the anode (ANO) and an organic light-emission layer (OLE) interposed between the anode(ANO) and the cathode (CAT), the organic light-emitting diode (OLED) being disposed in the emission area (AA), wherein the anode (ANO) is disposed on the overcoat layer (OC); wherein the anode (ANO) and the second storage capacitor electrode (SG2) are electrically connected to each other and to the driving thin film transistor (DT), characterized in that the anode (ANO) is in direct contact with the second storage capacitor electrode (SG2) through an overcoat layer contact hole (OCH) penetrating the overcoat layer (OC) and in direct contact with the driving thin film transistor (DT) through a passivation layer contact hole (INH) penetrating the passivation layer (IN2), the passivation layer contact hole (INH) being disposed in the overcoat layer contact hole (OCH). a substrate (SUB) on which an emission area (AA) and a non-emission area (NA) are defined; a driving thin film transistor (DT) disposed in the non-emission area (NA); a passivation layer (IN2) disposed on the driving thin film transistor (DT); a storage capacitor (STG) having a first storage capacitor electrode (SG1) and a second storage capacitor electrode (SG2) in the emission area (AA), wherein the second storage capacitor electrode (SG2) is superposed on the first storage capacitor electrode (SG1), and wherein the first and second storage capacitor electrodes (SG1; SG2) are formed of a transparent conductive material and have the passivation layer (IN2) interposed therebetween; an overcoat layer (OC) disposed on the storage capacitor (STG); and an organic light-emitting diode (OLED) including an anode (ANO), a cathode (CAT) superposed on the anode (ANO) and an organic light-emission layer (OLE) interposed between the anode(ANO) and the cathode (CAT), the organic light-emitting diode (OLED) being disposed in the emission area (AA), wherein the anode (ANO) is disposed on the overcoat layer (OC); wherein the anode (ANO) and the second storage capacitor electrode (SG2) are electrically connected to each other and to the driving thin film transistor (DT), characterized in that the anode (ANO) is in direct contact with the second storage capacitor electrode (SG2) through an overcoat layer contact hole (OCH) penetrating the overcoat layer (OC) and in direct contact with the driving thin film transistor (DT) through a passivation layer contact hole (INH) penetrating the passivation layer (IN2), the passivation layer contact hole (INH) being disposed in the overcoat layer contact hole (OCH). <EOS>