A storage device comprising: a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones; and processing circuitry configured to: receive a first write command and first data from a host, the first write command including a first logical address; receive a management command from the host for setting the plurality of zones and compression settings corresponding to each of the plurality of zones based on a number of predicted write accesses on the storage device, set the plurality of zones, and the corresponding compression settings associated with each of the plurality of zones, on the non-volatile memory to the based on the management command received from the host, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on the compression settings corresponding to the first zone; write the compressed first data to the first zone by the steps of identifying an initial write pointer representing a last storage location of the first zone, and writing the compressed first data sequentially to a next storage location from a storage location associated with the identified write pointer; update the initial write pointer to include information regarding the next storage location; and transfer, to the host, information about the write pointer including information regarding the initial write pointer and information regarding the updated write pointer. a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones; and processing circuitry configured to: receive a first write command and first data from a host, the first write command including a first logical address; receive a management command from the host for setting the plurality of zones and compression settings corresponding to each of the plurality of zones based on a number of predicted write accesses on the storage device, set the plurality of zones, and the corresponding compression settings associated with each of the plurality of zones, on the non-volatile memory to the based on the management command received from the host, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on the compression settings corresponding to the first zone; write the compressed first data to the first zone by the steps of receive a first write command and first data from a host, the first write command including a first logical address; receive a management command from the host for setting the plurality of zones and compression settings corresponding to each of the plurality of zones based on a number of predicted write accesses on the storage device, set the plurality of zones, and the corresponding compression settings associated with each of the plurality of zones, on the non-volatile memory to the based on the management command received from the host, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on the compression settings corresponding to the first zone; write the compressed first data to the first zone by the steps of identifying an initial write pointer representing a last storage location of the first zone, and writing the compressed first data sequentially to a next storage location from a storage location associated with the identified write pointer; update the initial write pointer to include information regarding the next storage location; and transfer, to the host, information about the write pointer including information regarding the initial write pointer and information regarding the updated write pointer. <EOS>