A semiconductor package (100-107), comprising: a substrate (30; 10); a first semiconductor structure (50; 150) mounted on the substrate (30; 10), the first semiconductor structure (50; 150) including a first sidewall and a second sidewall opposite to the first sidewall ; a second semiconductor structure (60; 160) mounted on the substrate (30; 10) and spaced apart from the first semiconductor structure (50; 150), the second semiconductor structure (60; 160) having a third sidewall which is adjacent to the first sidewall of the first semiconductor structure (50; 150), and a fourth sidewall which is opposite to the third sidewall ; a heat sink covering at least portions of the first semiconductor structure (50; 150), the second semiconductor structure (60; 160), and the substrate (30; 10); and a thermal interface material layer between the first semiconductor structure (50; 150) and the heat sink and between the second semiconductor structure (60; 160) and the heat sink , the thermal interface material layer including first to sixth thermal interface material segments (70a-70f), wherein the fifth thermal interface material segment protrudes beyond the second sidewall of the first semiconductor structure (50; 150), characterized in that the third thermal interface material segment is interposed between the first sidewall of the first semiconductor structure (50; 150) and the third sidewall of the second semiconductor structure (60; 160), and a distance (D3) from a top surface of the substrate (30; 10) to a lowest point of a bottom surface of the third thermal interface material segment is less than a distance (D4) from the top surface of the substrate (30; 10) to a lowest point of a bottom surface of the fifth thermal interface material segment . a substrate (30; 10); a first semiconductor structure (50; 150) mounted on the substrate (30; 10), the first semiconductor structure (50; 150) including a first sidewall and a second sidewall opposite to the first sidewall ; a second semiconductor structure (60; 160) mounted on the substrate (30; 10) and spaced apart from the first semiconductor structure (50; 150), the second semiconductor structure (60; 160) having a third sidewall which is adjacent to the first sidewall of the first semiconductor structure (50; 150), and a fourth sidewall which is opposite to the third sidewall ; a heat sink covering at least portions of the first semiconductor structure (50; 150), the second semiconductor structure (60; 160), and the substrate (30; 10); and a thermal interface material layer between the first semiconductor structure (50; 150) and the heat sink and between the second semiconductor structure (60; 160) and the heat sink , the thermal interface material layer including first to sixth thermal interface material segments (70a-70f), wherein the fifth thermal interface material segment protrudes beyond the second sidewall of the first semiconductor structure (50; 150), characterized in that the third thermal interface material segment is interposed between the first sidewall of the first semiconductor structure (50; 150) and the third sidewall of the second semiconductor structure (60; 160), and a distance (D3) from a top surface of the substrate (30; 10) to a lowest point of a bottom surface of the third thermal interface material segment is less than a distance (D4) from the top surface of the substrate (30; 10) to a lowest point of a bottom surface of the fifth thermal interface material segment . <EOS>