A thick film element having a coated substrate with high heat conductivity, comprising a carrier; a thick film coating deposited on the carrier; and a covering layer overlaid on the coating, the thick film coating is a heating material, and a mode of heating is electrical heating, characterized in that the carrier, the thick film coating and the covering layer are selected from a material that fulfills every of following equations: λ 3 A T 3 − T 0 d 3 = a × λ 1 A T 1 − T 0 d 1 , λ 2 A T 2 − T 0 d 2 = b × λ 1 A T 1 − T 0 d 1 , λ 2 A T 2 − T 0 d 2 = c × λ 3 A T 3 − T 0 d 3 ; wherein 10 < a ≤ 10 4 , 0 < b ≤ 10 6 , 0< c ≤ 10 3 ; T 2 < T Minimum melting point of the covering layer ; T 2 < T Minimum melting point of the carrier ; T 0 < 25°C; wherein a value λ 1 A T 1 − T 0 d 1 represents a heat transfer rate of the covering layer; a value of λ 2 A T 2 − T 0 d 2 represents a heat generating rate of the thick film coating; a value λ 3 A T 3 − T 0 d 3 represents a heat transfer rate of the carrier; λ 1 represents a heat conductivity coefficient of the covering layer at a temperature of T 1 ; λ 2 represents a heat conductivity coefficient of the thick film coating at a temperature of T 2 ; λ 3 represents a heat conductivity coefficient of the carrier at a temperature of T 3 ; A represents corresponding to the calculation case a contact area of the thick film coating either with the covering layer or with the carrier; d 1 represents a thickness of the covering layer; d 2 represents a thickness of the thick film coating; d 3 represents a thickness of the carrier; T 0 represents an initial temperature of the thick film heating element before starting to heat up; T 1 represents a surface temperature of the covering layer measured under a stable heating state; T 2 represents a heating temperature of the thick film coating measured under said stable heating state; T 3 represents a surface temperature of the carrier measured under said stable heating state; wherein d 2 ≤ 50μm; d 1 ≥ 10μm; 10μm ≤ d 3 ≤ 20cm; T Minimum melting point of the carrier > 25°C; and λ 3 ≥ λ 1 . wherein 10 < a ≤ 10 4 , 0 < b ≤ 10 6 , 0< c ≤ 10 3 ; T 2 < T Minimum melting point of the covering layer ; T 2 < T Minimum melting point of the carrier ; T 0 < 25°C; wherein a value λ 1 A T 1 − T 0 d 1 represents a heat transfer rate of the covering layer; a value of λ 2 A T 2 − T 0 d 2 represents a heat generating rate of the thick film coating; a value λ 3 A T 3 − T 0 d 3 represents a heat transfer rate of the carrier; λ 1 represents a heat conductivity coefficient of the covering layer at a temperature of T 1 ; λ 2 represents a heat conductivity coefficient of the thick film coating at a temperature of T 2 ; λ 3 represents a heat conductivity coefficient of the carrier at a temperature of T 3 ; A represents corresponding to the calculation case a contact area of the thick film coating either with the covering layer or with the carrier; d 1 represents a thickness of the covering layer; d 2 represents a thickness of the thick film coating; d 3 represents a thickness of the carrier; T 0 represents an initial temperature of the thick film heating element before starting to heat up; T 1 represents a surface temperature of the covering layer measured under a stable heating state; T 2 represents a heating temperature of the thick film coating measured under said stable heating state; T 3 represents a surface temperature of the carrier measured under said stable heating state; wherein d 2 ≤ 50μm; d 1 ≥ 10μm; 10μm ≤ d 3 ≤ 20cm; T Minimum melting point of the carrier > 25°C; and λ 3 ≥ λ 1 . <EOS>