A microelectronic assembly , comprising: a substrate ; a first microelectronic component mounted on the substrate ; a second microelectronic component mounted on the substrate , wherein the first microelectronic component and the second microelectronic component are mounted on the substrate in a side-by-side manner; and a shielding case mounted on the substrate , wherein the shielding case comprises a plurality of sidewalls , one intermediate wall , and a lid , wherein the first microelectronic component and the second microelectronic component are disposed in two separated compartments respectively within the shielding case , and wherein the intermediate wall is interposed between the first microelectronic component and the second microelectronic component ; characterized by a noise suppressing structure disposed directly on the first microelectronic component ; and a thermal interface material, in the following also referred to as TIM, layer , or an air gap situated between the noise suppressing structure and the lid ; wherein the first microelectronic component comprises a noisy digital/analog IP block and a RF IP block , the noisy digital/analog IP block of the first microelectronic component is closer to the intermediate wall than the RF IP block , the intermediate wall is electrically connected to a ground plane of the substrate through soldering and a conductive pad disposed directly under the intermediate wall , and the noise suppressing structure comprises a connecting portion with its distal end adhered to the intermediate wall such that the noise suppressing structure is electrically coupled to the ground plane of the substrate through the connecting portion and the intermediate wall . a substrate ; a first microelectronic component mounted on the substrate ; a second microelectronic component mounted on the substrate , wherein the first microelectronic component and the second microelectronic component are mounted on the substrate in a side-by-side manner; and a shielding case mounted on the substrate , wherein the shielding case comprises a plurality of sidewalls , one intermediate wall , and a lid , wherein the first microelectronic component and the second microelectronic component are disposed in two separated compartments respectively within the shielding case , and wherein the intermediate wall is interposed between the first microelectronic component and the second microelectronic component ; characterized by a noise suppressing structure disposed directly on the first microelectronic component ; and a thermal interface material, in the following also referred to as TIM, layer , or an air gap situated between the noise suppressing structure and the lid ; wherein the first microelectronic component comprises a noisy digital/analog IP block and a RF IP block , the noisy digital/analog IP block of the first microelectronic component is closer to the intermediate wall than the RF IP block , the intermediate wall is electrically connected to a ground plane of the substrate through soldering and a conductive pad disposed directly under the intermediate wall , and the noise suppressing structure comprises a connecting portion with its distal end adhered to the intermediate wall such that the noise suppressing structure is electrically coupled to the ground plane of the substrate through the connecting portion and the intermediate wall . <EOS>