A scanning electron microscope, SEM, comprising: a plurality of detecting units configured to detect backscattered electrons scattered by a specimen (S) ; an intensity pattern information generating unit arranged to generate, based on intensities of a plurality of detection signals output from the plurality of detecting units , intensity pattern information that represents the intensities of the plurality of detection signals as a pattern; a scanning deflector for scanning the specimen with an electron beam; a pattern analyzing unit arranged to analyze the intensity pattern information associated with an incidence position of the electron beam with respect to the specimen (S); and an image generating unit arranged to generate a pattern analysis image which indicates a distribution of crystal orientations of the specimen (S) based on an analysis result by the pattern analyzing unit , wherein the plurality of detecting units are constituted by a segmented detector having a plurality of first to n-th detection regions which are arranged to be rotationally symmetric around an optical axis (OA), the segmented detector has a through-hole for allowing the electron beam to pass and travel along the optical axis (OA), first to n-th detection signals are output from the first to n-th detection regions, respectively, and the pattern of the intensity pattern information is formed by consolidating origins of intensity axes of the first to n-th detection signals to radially arrange the intensity axes, plotting normalized intensities of the first to n-th detection signals on intensity axes of the first to n-th detection signals, respectively, and connecting adjacent points with straight lines. a plurality of detecting units configured to detect backscattered electrons scattered by a specimen (S) ; an intensity pattern information generating unit arranged to generate, based on intensities of a plurality of detection signals output from the plurality of detecting units , intensity pattern information that represents the intensities of the plurality of detection signals as a pattern; a scanning deflector for scanning the specimen with an electron beam; a pattern analyzing unit arranged to analyze the intensity pattern information associated with an incidence position of the electron beam with respect to the specimen (S); and an image generating unit arranged to generate a pattern analysis image which indicates a distribution of crystal orientations of the specimen (S) based on an analysis result by the pattern analyzing unit , wherein the plurality of detecting units are constituted by a segmented detector having a plurality of first to n-th detection regions which are arranged to be rotationally symmetric around an optical axis (OA), the segmented detector has a through-hole for allowing the electron beam to pass and travel along the optical axis (OA), first to n-th detection signals are output from the first to n-th detection regions, respectively, and the pattern of the intensity pattern information is formed by consolidating origins of intensity axes of the first to n-th detection signals to radially arrange the intensity axes, plotting normalized intensities of the first to n-th detection signals on intensity axes of the first to n-th detection signals, respectively, and connecting adjacent points with straight lines. <EOS>