A detection device (D1) for detecting infrared radiation, comprising at least one pixel (Pxl) having an axis (Δ) in a direction Z, said pixel comprising a first absorbent planar structure (SPA) comprising at least one semiconductor layer (C mm , C1, C2); each layer (C mm , C1, C2) of the first absorbent planar structure (SPA) being arranged in a crystal lattice structure; the first absorbent planar structure (SPA) being N-doped and being produced epitaxially on a substrate (Sub), and the composition of the materials used to produce the at least one layer (C mm , C1, C2) of the first absorbent planar structure (SPA) being chosen such that: ▪ the first absorbent planar structure (SPA) has an effective valence band (BV eff ) formed by a plurality of energy levels (Ev hh , Ev lh ); each energy level (Ev hh , Ev lh ) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh ); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh ) strictly less than the first effective mass (m hh ); the maximum energy level of the effective valence band (BV eff ) being occupied by light holes (lh) along the axis (Δ) of the pixel; the crystal lattice structure of said layer does not exhibit any dislocations resulting from mechanical relaxation of said lattices; the effective mass of the positive charge carriers along the axis of the pixel (Δ) being less than half the effective mass of the positive charge carriers in directions defining a plane orthogonal to the axis of the pixel (Δ). each layer (C mm , C1, C2) of the first absorbent planar structure (SPA) being arranged in a crystal lattice structure; the first absorbent planar structure (SPA) being N-doped and being produced epitaxially on a substrate (Sub), and the composition of the materials used to produce the at least one layer (C mm , C1, C2) of the first absorbent planar structure (SPA) being chosen such that: ▪ the first absorbent planar structure (SPA) has an effective valence band (BV eff ) formed by a plurality of energy levels (Ev hh , Ev lh ); each energy level (Ev hh , Ev lh ) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh ); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh ) strictly less than the first effective mass (m hh ); ▪ the first absorbent planar structure (SPA) has an effective valence band (BV eff ) formed by a plurality of energy levels (Ev hh , Ev lh ); each energy level (Ev hh , Ev lh ) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh ); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh ) strictly less than the first effective mass (m hh ); ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh ); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh ) strictly less than the first effective mass (m hh ); the maximum energy level of the effective valence band (BV eff ) being occupied by light holes (lh) along the axis (Δ) of the pixel; the crystal lattice structure of said layer does not exhibit any dislocations resulting from mechanical relaxation of said lattices; the effective mass of the positive charge carriers along the axis of the pixel (Δ) being less than half the effective mass of the positive charge carriers in directions defining a plane orthogonal to the axis of the pixel (Δ). <EOS>