A Schottky diode comprising: a drift layer having a first surface with an active region and a plurality of junction barrier element recesses , the drift layer being doped with a doping material of a first conductivity type and associated with an edge termination region that is laterally adjacent the active region, wherein the edge termination region comprises a plurality of guard rings ; a Schottky layer over the active region of the first surface to form a Schottky junction; a plurality of first doped regions that extend into the drift layer around corresponding ones of the plurality of junction barrier element recesses wherein the plurality of first doped regions are doped with a doping material of a second conductivity type, which is opposite the first conductivity type, and form an array of junction barrier elements in the drift layer below the Schottky junction; and a well formed in the drift layer and completely in the edge termination region, the well having a plurality of guard ring recesses such that said guard rings are formed completely in portions of the well that are around the plurality of guard ring recesses , the well being doped with the doping material of the second conductivity type, and wherein the guard ring recesses are coplanar with the plurality of junction barrier element recesses , wherein the drift layer is doped with the doping material of the first conductivity type in a graded fashion wherein the drift layer has a lower doping concentration near the first surface and an intentionally higher doping concentration near a second surface of the drift layer, the second surface being opposite the first surface. a drift layer having a first surface with an active region and a plurality of junction barrier element recesses , the drift layer being doped with a doping material of a first conductivity type and associated with an edge termination region that is laterally adjacent the active region, wherein the edge termination region comprises a plurality of guard rings ; a Schottky layer over the active region of the first surface to form a Schottky junction; a plurality of first doped regions that extend into the drift layer around corresponding ones of the plurality of junction barrier element recesses wherein the plurality of first doped regions are doped with a doping material of a second conductivity type, which is opposite the first conductivity type, and form an array of junction barrier elements in the drift layer below the Schottky junction; and a well formed in the drift layer and completely in the edge termination region, the well having a plurality of guard ring recesses such that said guard rings are formed completely in portions of the well that are around the plurality of guard ring recesses , the well being doped with the doping material of the second conductivity type, and wherein the guard ring recesses are coplanar with the plurality of junction barrier element recesses , wherein the drift layer is doped with the doping material of the first conductivity type in a graded fashion wherein the drift layer has a lower doping concentration near the first surface and an intentionally higher doping concentration near a second surface of the drift layer, the second surface being opposite the first surface. <EOS>