A semiconductor device comprising: a plurality of power units placed in a second direction (Y) and parallel to each other, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate , the semiconductor elements of each of the power units having predetermined gaps (S1, S2) with each other, wherein two of the power units, before being sealed with resin, have a passage (S3) therebetween configured to let injected resin flowing through during manufacturing, wherein the semiconductor elements of each of the two power units include a near-sided semiconductor element and a far-sided semiconductor element , wherein the near-sided semiconductor element is in a first direction (X) closer to an inlet of the resin among the two semiconductor elements having the predetermined gaps (S1, S2) therebetween and wherein the near-sided semiconductor elements of the two power units contain end parts on a side opposite to another side which is closer to the inlet of the resin, characterized in that a structure is positioned in the passage (S3) downstream in a resin flow direction relative to the end parts of the near-sided semiconductor elements such that the structure prevents the resin from flowing downstream in a resin flow direction, and in that the far-sided semiconductor element of each of the two power units is a semiconductor element positioned on a far side which is further away from the inlet than the near-sided semiconductor element , and projecting from the end part of the near-sided semiconductor element in the second direction (Y). a plurality of power units placed in a second direction (Y) and parallel to each other, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate , the semiconductor elements of each of the power units having predetermined gaps (S1, S2) with each other, wherein two of the power units, before being sealed with resin, have a passage (S3) therebetween configured to let injected resin flowing through during manufacturing, wherein the semiconductor elements of each of the two power units include a near-sided semiconductor element and a far-sided semiconductor element , wherein the near-sided semiconductor element is in a first direction (X) closer to an inlet of the resin among the two semiconductor elements having the predetermined gaps (S1, S2) therebetween and wherein the near-sided semiconductor elements of the two power units contain end parts on a side opposite to another side which is closer to the inlet of the resin, characterized in that a structure is positioned in the passage (S3) downstream in a resin flow direction relative to the end parts of the near-sided semiconductor elements such that the structure prevents the resin from flowing downstream in a resin flow direction, and in that the far-sided semiconductor element of each of the two power units is a semiconductor element positioned on a far side which is further away from the inlet than the near-sided semiconductor element , and projecting from the end part of the near-sided semiconductor element in the second direction (Y). <EOS>