An image sensor, in particular a CMOS image sensor, for electronic cameras, the image sensor comprising a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: - a light-sensitive element to generate electrical charge from incident light; - a readout node ; - a transfer gate to selectively couple the light-sensitive element to the readout node ; - a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output ; and - a selection switch which is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor, wherein the respective pixel has an electrically conductive shielding structure which at least partly surrounds the readout node and which is set or can be set to an electrical potential which depends on the voltage signal at the signal output of the converter transistor , wherein the readout node comprises a bridge section which connects an output of the transfer gate to a gate terminal of the converter transistor , wherein the transfer gate and the converter transistor are disposed in a first plane of the pixel and the bridge section is disposed in a second plane of the pixel which is offset in parallel relative to the first plane, and wherein the shielding structure comprises a shielding section which is disposed in the second plane of the pixel and which at least partly surrounds the bridge section , characterized in that - the shielding section at least partly covers the output of the transfer gate and at least partly covers the signal output of the converter transistor ; and/or - in that the shielding structure comprises a further shielding section which is disposed in the first plane of the pixel and which is arranged adjacent to the transfer gate and/or to the converter transistor . - a light-sensitive element to generate electrical charge from incident light; - a readout node ; - a transfer gate to selectively couple the light-sensitive element to the readout node ; - a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output ; and - a selection switch which is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor, wherein the respective pixel has an electrically conductive shielding structure which at least partly surrounds the readout node and which is set or can be set to an electrical potential which depends on the voltage signal at the signal output of the converter transistor , wherein the readout node comprises a bridge section which connects an output of the transfer gate to a gate terminal of the converter transistor , wherein the transfer gate and the converter transistor are disposed in a first plane of the pixel and the bridge section is disposed in a second plane of the pixel which is offset in parallel relative to the first plane, and wherein the shielding structure comprises a shielding section which is disposed in the second plane of the pixel and which at least partly surrounds the bridge section , characterized in that - the shielding section at least partly covers the output of the transfer gate and at least partly covers the signal output of the converter transistor ; and/or - in that the shielding structure comprises a further shielding section which is disposed in the first plane of the pixel and which is arranged adjacent to the transfer gate and/or to the converter transistor . <EOS>