Laser emission device with integrated light modulator comprising: a multilayer waveguide, the waveguide extending along a longitudinal direction of the device, the waveguide comprising, on a support layer made of silicon dioxide , a first guiding layer of silicon , a negatively doped first doped layer , a second guiding layer of light amplifying material, and a biasing second doped layer opposite the first doped layer, the waveguide comprising, along the longitudinal direction a laser amplification section , a light modulation section comprising an extraction zone for radiating the light of a resonant optical mode towards the exterior of the device, and a transition section inserted in the longitudinal direction, between the laser amplification section and the light modulation section, the device also comprising: a positive first electrode coupled the second doped layer in the laser amplification section to inject a pumping current into the laser amplification section, a positive second electrode coupled to the second doped layer in the light modulation section to inject a modulation signal into the modulation section, a negative third electrode coupled to the first doped layer in the modulation section to apply a biasing electrical potential to the first doped layer, and a reference fourth electrode coupled to the first doped layer in the laser amplification section, wherein the second doped layer comprises an electrical insulation situated in the transition section of the waveguide, characterized in that the first doped layer forms a resistive channel in the transition section between the first doped layer of the amplification section and the first doped layer of the modulation section . a multilayer waveguide, the waveguide extending along a longitudinal direction of the device, the waveguide comprising, on a support layer made of silicon dioxide , a first guiding layer of silicon , a negatively doped first doped layer , a second guiding layer of light amplifying material, and a biasing second doped layer opposite the first doped layer, the waveguide comprising, along the longitudinal direction a laser amplification section , a light modulation section comprising an extraction zone for radiating the light of a resonant optical mode towards the exterior of the device, and a transition section inserted in the longitudinal direction, between the laser amplification section and the light modulation section, the device also comprising: a positive first electrode coupled the second doped layer in the laser amplification section to inject a pumping current into the laser amplification section, a positive second electrode coupled to the second doped layer in the light modulation section to inject a modulation signal into the modulation section, a negative third electrode coupled to the first doped layer in the modulation section to apply a biasing electrical potential to the first doped layer, and a reference fourth electrode coupled to the first doped layer in the laser amplification section, a positive first electrode coupled the second doped layer in the laser amplification section to inject a pumping current into the laser amplification section, a positive second electrode coupled to the second doped layer in the light modulation section to inject a modulation signal into the modulation section, a negative third electrode coupled to the first doped layer in the modulation section to apply a biasing electrical potential to the first doped layer, and a reference fourth electrode coupled to the first doped layer in the laser amplification section, wherein the second doped layer comprises an electrical insulation situated in the transition section of the waveguide, characterized in that the first doped layer forms a resistive channel in the transition section between the first doped layer of the amplification section and the first doped layer of the modulation section . <EOS>