A method for treating a SOI substrate , in single-wafer cleaning equipment, said equipment comprising: • A system for gripping the substrate able to perform a rotational movement, • A first nozzle for dispensing a first solution in the form of a jet of droplets onto a front face of the substrate , • A second nozzle for dispensing a second solution onto a rear face of the substrate , • Optionally, a screen plate able to be positioned parallel to the front face of the SOI substrate at a distance of 1 to 2 mm, and to expel a flow of nitrogen under pressure to form a nitrogen cushion between the front face and said screen plate, The dispensing of the second solution onto the rear face of the substrate being carried out only when the front face is protected by the dispensing of a solution onto the front face or by the nitrogen cushion, the method being characterized in that : - it is applied to an SOI substrate having thin layers of silicon and oxide of a thicknesses less than 50 nm, - the surface kinetic energy of the droplets is less than or equal to 30 Joules/m 2 , - the single-wafer cleaning equipment comprises a plurality of cups of frustoconical shape and arranged in a space peripheral to the substrate , each cup being able to change altitude relative to the substrate in order to recover at least one of the solutions after dispensing when it is ejected at the edge of said substrate , the change of altitude of each cup being carried out only when the rotational movement of the gripping system of the substrate has a speed of less than or equal to 600 revolutions per minute. • A system for gripping the substrate able to perform a rotational movement, • A first nozzle for dispensing a first solution in the form of a jet of droplets onto a front face of the substrate , • A second nozzle for dispensing a second solution onto a rear face of the substrate , • Optionally, a screen plate able to be positioned parallel to the front face of the SOI substrate at a distance of 1 to 2 mm, and to expel a flow of nitrogen under pressure to form a nitrogen cushion between the front face and said screen plate, The dispensing of the second solution onto the rear face of the substrate being carried out only when the front face is protected by the dispensing of a solution onto the front face or by the nitrogen cushion, the method being characterized in that : - it is applied to an SOI substrate having thin layers of silicon and oxide of a thicknesses less than 50 nm, - the surface kinetic energy of the droplets is less than or equal to 30 Joules/m 2 , - the single-wafer cleaning equipment comprises a plurality of cups of frustoconical shape and arranged in a space peripheral to the substrate , each cup being able to change altitude relative to the substrate in order to recover at least one of the solutions after dispensing when it is ejected at the edge of said substrate , the change of altitude of each cup being carried out only when the rotational movement of the gripping system of the substrate has a speed of less than or equal to 600 revolutions per minute. - it is applied to an SOI substrate having thin layers of silicon and oxide of a thicknesses less than 50 nm, - the surface kinetic energy of the droplets is less than or equal to 30 Joules/m 2 , - the single-wafer cleaning equipment comprises a plurality of cups of frustoconical shape and arranged in a space peripheral to the substrate , each cup being able to change altitude relative to the substrate in order to recover at least one of the solutions after dispensing when it is ejected at the edge of said substrate , the change of altitude of each cup being carried out only when the rotational movement of the gripping system of the substrate has a speed of less than or equal to 600 revolutions per minute. <EOS>