An electron imaging apparatus that is configured for an electron transfer along an electron-optical axis (OA) from a sample emitting electrons to an energy analyzer apparatus and comprises a first lens group on a sample side and a second lens group on an analyzer side and a deflector device that is configured to deflect the electrons in an exit plane of the electron imaging apparatus in a deflection direction perpendicular to the electron-optical axis (OA), wherein: - the first lens group provides a first reciprocal plane (RP1) inside the first lens group and a first Gaussian plane (GP1) between the first and the second lens group and is configured to generate a first momentum distribution image of a momentum distribution of electrons from the sample in the first reciprocal plane (RP1) and to generate a first Gaussian image of the sample in the first Gaussian plane (GP1), - the second lens group provides a second reciprocal plane (RP2) on the analyzer side of the second lens group and is configured to generate a second momentum distribution image of the momentum distribution of the electrons from the sample in the second reciprocal plane (RP2), characterized in that - the first lens group is configured to generate the first Gaussian image in a front focal plane of the second lens group with an extent perpendicular to the electron-optical axis (OA) of less than 1 mm, so that the second momentum distribution image generated by the second lens group is a parallel image, the partial beams of which run parallel to the electron-optical axis (OA) on passing through the second reciprocal plane (RP2) or have a divergence smaller than 0.4°, and - the deflector device acts in the first Gaussian plane (GP1) or in another Gaussian plane (GP2), so that the deflection of the electrons effects a parallel displacement of the partial beams, which form the parallel image in the second reciprocal plane (RP2), without changing the angle between the partial beams perpendicular to the optical axis (OA). - the first lens group provides a first reciprocal plane (RP1) inside the first lens group and a first Gaussian plane (GP1) between the first and the second lens group and is configured to generate a first momentum distribution image of a momentum distribution of electrons from the sample in the first reciprocal plane (RP1) and to generate a first Gaussian image of the sample in the first Gaussian plane (GP1), - the second lens group provides a second reciprocal plane (RP2) on the analyzer side of the second lens group and is configured to generate a second momentum distribution image of the momentum distribution of the electrons from the sample in the second reciprocal plane (RP2), - the first lens group is configured to generate the first Gaussian image in a front focal plane of the second lens group with an extent perpendicular to the electron-optical axis (OA) of less than 1 mm, so that the second momentum distribution image generated by the second lens group is a parallel image, the partial beams of which run parallel to the electron-optical axis (OA) on passing through the second reciprocal plane (RP2) or have a divergence smaller than 0.4°, and - the deflector device acts in the first Gaussian plane (GP1) or in another Gaussian plane (GP2), so that the deflection of the electrons effects a parallel displacement of the partial beams, which form the parallel image in the second reciprocal plane (RP2), without changing the angle between the partial beams perpendicular to the optical axis (OA). <EOS>