A semiconductor device comprising: a semiconductor substrate ; a drift region of first conductivity type formed on one of main surfaces of the semiconductor substrate; a well region of second conductivity type formed in the drift region; a source region of first conductivity type formed in the well region; a trench with a depth penetrating the source region and the well region and reaching the drift region; a gate electrode formed on a side portion of the trench while interposing a gate insulating film therebetween; a source electrode connected to the well region and the source region; a drain electrode connected to other of the main surfaces of the semiconductor substrate; an interlayer insulating film that is formed on the gate electrode and coats the gate electrode; an anode region formed on a bottom portion of the trench; a contact hole formed at a depth reaching the anode region in the trench; and an inner wall insulating film formed on an inner wall side surface of the contact hole while being in contact with the gate electrode, wherein the source electrode is embedded in the contact hole while interposing the inner wall insulating film between the source electrode and the gate electrode , and is electrically connected to the anode region in a state of being insulated from the gate electrode by the inner wall insulating film , wherein the trench is formed into a mesh shape with respect to a main surface direction of the semiconductor substrate , and characterized in that the anode region is formed of a semiconductor different in band gap from the drift region , wherein the contact holes are formed continuously into a mesh shape along an inside of the trench . a semiconductor substrate ; a drift region of first conductivity type formed on one of main surfaces of the semiconductor substrate; a well region of second conductivity type formed in the drift region; a source region of first conductivity type formed in the well region; a trench with a depth penetrating the source region and the well region and reaching the drift region; a gate electrode formed on a side portion of the trench while interposing a gate insulating film therebetween; a source electrode connected to the well region and the source region; a drain electrode connected to other of the main surfaces of the semiconductor substrate; an interlayer insulating film that is formed on the gate electrode and coats the gate electrode; an anode region formed on a bottom portion of the trench; a contact hole formed at a depth reaching the anode region in the trench; and an inner wall insulating film formed on an inner wall side surface of the contact hole while being in contact with the gate electrode, wherein the source electrode is embedded in the contact hole while interposing the inner wall insulating film between the source electrode and the gate electrode , and is electrically connected to the anode region in a state of being insulated from the gate electrode by the inner wall insulating film , wherein the trench is formed into a mesh shape with respect to a main surface direction of the semiconductor substrate , and characterized in that the anode region is formed of a semiconductor different in band gap from the drift region , wherein the contact holes are formed continuously into a mesh shape along an inside of the trench . <EOS>