Method for changing a switching state of a switching half-bridge , which has a first and a second field-effect transistor , from a first switching state, in which a gate-source voltage (U GS1 ) of the first field-effect transistor adopts a switch-on level (U on ) and a gate-source voltage (U Gs2 ) of the second field-effect transistor adopts a first switch-off level (U off1 ), to a second switching state, in which the gate-source voltage (U GS1 ) of the first field-effect transistor adopts the first switch-off level (U off1 ) and the gate-source voltage (U GS2 ) of the second field-effect transistor adopts the switch-on level (U on ), wherein - the gate-source voltage (U GS1 ) of the first field-effect transistor is firstly changed from the switch-on level (U on ) to a second switch-off level (U off2 ), the magnitude of which is greater than the magnitude of the first switch-off level (U off1 ) , - then the gate-source voltage (U GS2 ) of the second field-effect transistor is changed from the first switch-off level (U off1 ) to the switch-on level (U on ) - and thereafter the gate-source voltage (U GS1 ) of the first field-effect transistor is changed from the second switch-off level (U off2 ) to the first switch-off level (U off1 ) , characterised in that upstream of a gate terminal (G1) of the first field-effect transistor is arranged a supplementary circuit with a first and a second circuit branch connected parallel to one another, wherein the first circuit branch has a damping resistor and an inductor connected in series thereto and the second circuit branch has a series resistor and an auxiliary switch and, in the event of a change in a control voltage (U C1 ) of the first field-effect transistor from the switch-on level (U on ) to the first switch-off level (U off1 ) with the auxiliary switch open, the inductor and the damping resistor bring about a temporary change in the gate-source voltage (U GS1 ) of the first field-effect transistor to the second switch-off level (U off2 ), - and, in order to change the gate-source voltage (U GS1 ) of the first field-effect transistor from the switch-on level (U on ) to the second switch-off level (U off2 ) , the control voltage (U C1 ) of the first field-effect transistor with the auxiliary switch open is changed from the switch-on level (U on ) to the first switch-off level (U off1 ) . - the gate-source voltage (U GS1 ) of the first field-effect transistor is firstly changed from the switch-on level (U on ) to a second switch-off level (U off2 ), the magnitude of which is greater than the magnitude of the first switch-off level (U off1 ) , - then the gate-source voltage (U GS2 ) of the second field-effect transistor is changed from the first switch-off level (U off1 ) to the switch-on level (U on ) - and thereafter the gate-source voltage (U GS1 ) of the first field-effect transistor is changed from the second switch-off level (U off2 ) to the first switch-off level (U off1 ) , - and, in order to change the gate-source voltage (U GS1 ) of the first field-effect transistor from the switch-on level (U on ) to the second switch-off level (U off2 ) , the control voltage (U C1 ) of the first field-effect transistor with the auxiliary switch open is changed from the switch-on level (U on ) to the first switch-off level (U off1 ) . <EOS>