A method for forming a semiconductor device , comprising: forming a first layer having a first conductivity type atop a substrate ; forming a second layer having the first conductivity type atop the first layer via a blanket fabrication process; doping the second layer such that an average dopant concentration of the second layer is greater than an average dopant concentration of the first layer ; forming a termination area doped region in the second layer , the termination area doped region having a second conductivity type opposite the first conductivity type; forming an active area doped region having the second conductivity type in the second layer after forming the termination area doped region ; doping the active area doped region such that the active area doped region comprises a dopant concentration that increases by at least five times from a surface of the active area doped region to a depth at which a peak concentration is disposed; further comprising doping the second layer such that a dopant concentration profile of an average dopant concentration within the second layer as measured from a surface of the second layer to a given depth of the second layer comprises a retrograde profile; doping the termination area doped region such that an average dopant concentration within the termination area doped region as measured from a top surface of the termination area to a given depth of the termination area doped region comprises a retrograde profile or a box-like profile, and wherein a peak concentration of the termination area doped region is greater than a peak concentration of the second layer ; wherein forming a termination area doped region in the second layer comprises forming a plurality of discrete doped regions, the plurality of discrete doped regions having an effective doping profile that decreases along a direction away from an edge of the termination area doped region that is adj acent the active area doped region . forming a first layer having a first conductivity type atop a substrate ; forming a second layer having the first conductivity type atop the first layer via a blanket fabrication process; doping the second layer such that an average dopant concentration of the second layer is greater than an average dopant concentration of the first layer ; forming a termination area doped region in the second layer , the termination area doped region having a second conductivity type opposite the first conductivity type; forming an active area doped region having the second conductivity type in the second layer after forming the termination area doped region ; doping the active area doped region such that the active area doped region comprises a dopant concentration that increases by at least five times from a surface of the active area doped region to a depth at which a peak concentration is disposed; further comprising doping the second layer such that a dopant concentration profile of an average dopant concentration within the second layer as measured from a surface of the second layer to a given depth of the second layer comprises a retrograde profile; doping the termination area doped region such that an average dopant concentration within the termination area doped region as measured from a top surface of the termination area to a given depth of the termination area doped region comprises a retrograde profile or a box-like profile, and wherein a peak concentration of the termination area doped region is greater than a peak concentration of the second layer ; wherein forming a termination area doped region in the second layer comprises forming a plurality of discrete doped regions, the plurality of discrete doped regions having an effective doping profile that decreases along a direction away from an edge of the termination area doped region that is adj acent the active area doped region . <EOS>