A method of passivating a cleaved semiconductor structure for utilization as an edge-emitting laser device, the method comprising: - providing an enclosure having a first chamber and a second chamber, a transfer arm to receive and transfer a given structure from the first chamber to the second chamber, and a fixture to mount the given structure thereon in the second chamber, and with each of the first chamber and the second chamber adapted to provide vacuum condition inside thereof; - loading the cleaved semiconductor structure defining a first facet, in the first chamber, onto the transfer arm therein; - transferring the cleaved semiconductor structure from the first chamber to the second chamber using the transfer arm, to have the cleaved semiconductor structure mounted onto the fixture in the second chamber; - exposing the first facet of the cleaved semiconductor structure in the second chamber to a cleaning beam from a cleaning source opposing the first facet by manipulating the fixture therein, to remove a possible native oxide layer formed on the first facet of the cleaved semiconductor structure; - exposing the first facet of the cleaved semiconductor structure in the second chamber to heat energy from a heating source opposing the first facet by manipulating the fixture therein, to heat the first facet of the cleaved semiconductor structure; and - exposing the first facet of the cleaved semiconductor structure in the second chamber to an oxidation agent from an oxidizing source opposing the first facet by manipulating the fixture therein, to form an ordered oxide layer on the first facet of the cleaved semiconductor structure. - providing an enclosure having a first chamber and a second chamber, a transfer arm to receive and transfer a given structure from the first chamber to the second chamber, and a fixture to mount the given structure thereon in the second chamber, and with each of the first chamber and the second chamber adapted to provide vacuum condition inside thereof; - loading the cleaved semiconductor structure defining a first facet, in the first chamber, onto the transfer arm therein; - transferring the cleaved semiconductor structure from the first chamber to the second chamber using the transfer arm, to have the cleaved semiconductor structure mounted onto the fixture in the second chamber; - exposing the first facet of the cleaved semiconductor structure in the second chamber to a cleaning beam from a cleaning source opposing the first facet by manipulating the fixture therein, to remove a possible native oxide layer formed on the first facet of the cleaved semiconductor structure; - exposing the first facet of the cleaved semiconductor structure in the second chamber to heat energy from a heating source opposing the first facet by manipulating the fixture therein, to heat the first facet of the cleaved semiconductor structure; and - exposing the first facet of the cleaved semiconductor structure in the second chamber to an oxidation agent from an oxidizing source opposing the first facet by manipulating the fixture therein, to form an ordered oxide layer on the first facet of the cleaved semiconductor structure. <EOS>