A light emitting diode, comprising: a substrate ; a first conductivity type semiconductor layer arranged on the substrate ;a second conductive type semiconductor layer arranged on the first conductivity type semiconductor layer ; an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer ; a first electrode pad arranged directly on the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer ; a second electrode pad arranged on a region exposed by mesa-etching the second conductivity type semiconductor layer and the active layer of the first conductivity type semiconductor layer ; a transparent electrode layer arranged on the second conductivity type semiconductor layer and forming an ohmic contact with the second conductivity type semiconductor layer ; an insulation layer disposed between the first conductivity type semiconductor layer and the second electrode pad , wherein the insulation layer extends to an upper surface of the transparent electrode layer such that an edge of the insulation layer overlaps the transparent electrode layer ; at least one upper extension electrically connected to the second electrode pad , the at least one upper extension being located on the transparent electrode layer and the second conductivity type semiconductor layer and being electrically connected to the second conductivity type semiconductor layer via the transparent electrode layer ; and an upper connector connecting the at least one upper extension to the second electrode pad , wherein the insulation layer is disposed between the second conductivity type semiconductor layer and the upper connector . a substrate ; a first conductivity type semiconductor layer arranged on the substrate ;a second conductive type semiconductor layer arranged on the first conductivity type semiconductor layer ; an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer ; a first electrode pad arranged directly on the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer ; a second electrode pad arranged on a region exposed by mesa-etching the second conductivity type semiconductor layer and the active layer of the first conductivity type semiconductor layer ; a transparent electrode layer arranged on the second conductivity type semiconductor layer and forming an ohmic contact with the second conductivity type semiconductor layer ; an insulation layer disposed between the first conductivity type semiconductor layer and the second electrode pad , wherein the insulation layer extends to an upper surface of the transparent electrode layer such that an edge of the insulation layer overlaps the transparent electrode layer ; at least one upper extension electrically connected to the second electrode pad , the at least one upper extension being located on the transparent electrode layer and the second conductivity type semiconductor layer and being electrically connected to the second conductivity type semiconductor layer via the transparent electrode layer ; and an upper connector connecting the at least one upper extension to the second electrode pad , wherein the insulation layer is disposed between the second conductivity type semiconductor layer and the upper connector . <EOS>