mhurhangee/patent-ind-claim-en huggingface dataset:
A winding-type stacked body for a condenser, comprising: a pair of two metal layers (A1, A2), wherein metals used for the metal layers (A1, A2) include aluminum, aluminum alloy, zinc, zinc alloy, copper or copper alloy, wherein a dielectric layer (B1, B2) is present on each metal layer (A1, A2), wherein a layer thickness of the dielectric layer (B1, B2) is higher than or equal to 5 nm and lower than or equal to 500 nm; and wherein materials for the dielectric layer include one of molybdenum oxide, zinc oxide, magnesium silicate, magnesium oxide and silicon oxide, metal hydroxide, metal nitride, talc, mica, calcium silicate, potassium silicate, calcinated clay, barium sulfate, aluminum oxide, magnesium carbonate, calcium carbonate and barium carbonate, and wherein the metal layer (A1, A2) is divided by patterning, and the metal layers (A1, A2) are stacked and wound, and a plastic film of polymer substance is absent. a pair of two metal layers (A1, A2), wherein metals used for the metal layers (A1, A2) include aluminum, aluminum alloy, zinc, zinc alloy, copper or copper alloy, wherein a dielectric layer (B1, B2) is present on each metal layer (A1, A2), wherein a layer thickness of the dielectric layer (B1, B2) is higher than or equal to 5 nm and lower than or equal to 500 nm; and wherein materials for the dielectric layer include one of molybdenum oxide, zinc oxide, magnesium silicate, magnesium oxide and silicon oxide, metal hydroxide, metal nitride, talc, mica, calcium silicate, potassium silicate, calcinated clay, barium sulfate, aluminum oxide, magnesium carbonate, calcium carbonate and barium carbonate, and wherein the metal layer (A1, A2) is divided by patterning, and the metal layers (A1, A2) are stacked and wound, and
A grinding device for grinding coffee beans, comprising a hopper for the coffee beans, grinders , an interface for the user for selecting the quantity of ground coffee in a range of values of selectable quantities of coffee powder, and an electric motor supplied by mains electricity voltage for driving said grinders , characterised in that it comprises measuring means for measuring the mains electricity voltage and an electronic controller configured to: - associate, for each value of a selectable quantity of ground coffee, a series of grinding time values with a series of corresponding values of the mains electricity voltage; - acquire a value of a quantity of ground coffee selected by the user via said interface ; - detect by said measuring means a mains electricity voltage value; - for the acquired value of a quantity of ground coffee selected by the user, set the grinding time value corresponding to the detected mains electricity voltage value; and - drive the grinders for the set grinding time value. - associate, for each value of a selectable quantity of ground coffee, a series of grinding time values with a series of corresponding values of the mains electricity voltage; - acquire a value of a quantity of ground coffee selected by the user via said interface ; - detect by said measuring means a mains electricity voltage value; - for the acquired value of a quantity of ground coffee selected by the user, set the grinding time value corresponding to the detected mains electricity voltage value; and - drive the grinders for the set grinding time value.
Method for rotary blind embossing of a substrate in a work station , comprising an embossing roller and a counterpressure roller , wherein the method comprises the following steps: a) preparation of the substrate ; b) blind embossing of the substrate by means of at least one die arranged on the embossing roller and at least one punch arranged on the counterpressure roller ; and wherein the method comprises the following steps; - preparation of a positioning aid comprising at least one window region ; - arrangement of the positioning aid on the embossing roller and/or the counterpressure roller ; - arrangement of the at least one die and/or punch in the at least one window region of the positioning aid , characterised in that , during the arrangement of the at least one die and/or punch in the at least one window region of the positioning aid , the at least one die and/or punch are adjusted by the means of an adjustment aid in the at least one window region , and the adjustment aid is arranged in such a way that the at least one die and/or punch is moveable at least in one direction. a) preparation of the substrate ; b) blind embossing of the substrate by means of at least one die arranged on the embossing roller and at least one punch arranged on the counterpressure roller ; - preparation of a positioning aid comprising at least one window region ; - arrangement of the positioning aid on the embossing roller and/or the counterpressure roller ; - arrangement of the at least one die and/or punch in the at least one window region of the positioning aid ,
A method of accurately tracking available charge stored in a transcutaneous energy transfer system, comprising: utilizing fuel gauge circuitry to record a plurality of battery cell metrics of a transcutaneous energy system associated with an implantable device , said plurality of metrics including battery temperature; utilizing a controller to determine the current charge remaining in a rechargeable battery pack based on said plurality of metrics; utilizing the fuel gauge circuitry to measure the current rate of power consumption for the implantable device ; utilizing the controller to compute the remaining time before the energy level of the battery pack is below a predetermined threshold level at the measured rate of power consumption; and utilizing the controller to communicate the remaining time before exhaustion of the battery pack to a user. utilizing fuel gauge circuitry to record a plurality of battery cell metrics of a transcutaneous energy system associated with an implantable device , said plurality of metrics including battery temperature; utilizing a controller to determine the current charge remaining in a rechargeable battery pack based on said plurality of metrics; utilizing the fuel gauge circuitry to measure the current rate of power consumption for the implantable device ; utilizing the controller to compute the remaining time before the energy level of the battery pack is below a predetermined threshold level at the measured rate of power consumption; and utilizing the controller to communicate the remaining time before exhaustion of the battery pack to a user.
Method for the manufacture of an optical article comprising the following steps: - providing a substrate having two main faces and bearing -OH functions on at least one of its faces, - successively exposing one face of the substrate bearing -OH functions to at least two distinct materials named M1 and M2, in the order M1 followed by M2, M1 having a weight average molecular weight higher than M2, in a vacuum chamber under conditions resulting in the deposit of those materials on the surface of the substrate, and wherein: - M1 is a substituted silane, comprising: ∘ at least one function X1 bonded to a silicon atom, wherein the Si-X1 group is capable of forming a covalent bond with a -OH group of the substrate, and/or a covalent bond with M2, and ∘ at least one fluorine containing group, - M2 is a substituted silane having a number average molecular weight inferior or equal to 900 g/mol, comprising: ∘ at least one function X2 bonded to a silicon atom, wherein the Si-X2 group is capable of forming a covalent bond with a -OH group of the substrate and/or a covalent bond with M1 , and ∘ at least one hydrophobic and/or oleophobic group, or at least one hydrophilic group, wherein the difference between the weight average molecular weight of M1 and the weight average molecular weight of M2 is higher than or equal to 600 g/mol, preferably higher than or equal to 900 g/mol, and M1 and/or M2 molecules are covalently grafted on the substrate's surface. - providing a substrate having two main faces and bearing -OH functions on at least one of its faces, - successively exposing one face of the substrate bearing -OH functions to at least two distinct materials named M1 and M2, in the order M1 followed by M2, M1 having a weight average molecular weight higher than M2, in a vacuum chamber under conditions resulting in the deposit of those materials on the surface of the substrate, and wherein: - M1 is a substituted silane, comprising: ∘ at least one function X1 bonded to a silicon atom, wherein the Si-X1 group is capable of forming a covalent bond with a -OH group of the substrate, and/or a covalent bond with M2, and ∘ at least one fluorine containing group, ∘ at least one function X1 bonded to a silicon atom, wherein the Si-X1 group is capable of forming a covalent bond with a -OH group of the substrate, and/or a covalent bond with M2, and ∘ at least one fluorine containing group, - M2 is a substituted silane having a number average molecular weight inferior or equal to 900 g/mol, comprising: ∘ at least one function X2 bonded to a silicon atom, wherein the Si-X2 group is capable of forming a covalent bond with a -OH group of the substrate and/or a covalent bond with M1 , and ∘ at least one hydrophobic and/or oleophobic group, or at least one hydrophilic group, ∘ at least one function X2 bonded to a silicon atom, wherein the Si-X2 group is capable of forming a covalent bond with a -OH group of the substrate and/or a covalent bond with M1 , and ∘ at least one hydrophobic and/or oleophobic group, or at least one hydrophilic group,
A photovoltaic device comprising a layered structure on a substrate comprising: an electrode arrangement comprising first and second patterned electrode elements and an optically active semiconductor layer in direct interaction with said electrode arrangement , said optically active semiconductor layer being configured to generate charge carriers in response to impinging electromagnetic radiation; the electrode arrangement being configured, in accordance with material properties of said optically active semiconductor layer , to allow selective collection of charge carriers of opposite polarities generated in said optically active semiconductor layer by the first and second electrodes respectively; wherein said optically active semiconductor layer is located between a radiation source and said electrode arrangement 100; characterized in that : the optically active semiconductor layer comprises optically active semiconducting structures that are selected from: Rb 2 Sn m I 6 , Cs 2 Sn m I 6 , Cs 2 Sn m Cl 6 , Rb 2 Sn m Cl 6 , CsSn m I 3 , Cs 2 Sn m Br 6 , Rb 2 Sn m Br 6 , and any combination of them; wherein each value of m, independently of the other, is between 0.2 and 6. an electrode arrangement comprising first and second patterned electrode elements and an optically active semiconductor layer in direct interaction with said electrode arrangement , said optically active semiconductor layer being configured to generate charge carriers in response to impinging electromagnetic radiation; the electrode arrangement being configured, in accordance with material properties of said optically active semiconductor layer , to allow selective collection of charge carriers of opposite polarities generated in said optically active semiconductor layer by the first and second electrodes respectively; wherein said optically active semiconductor layer is located between a radiation source and said electrode arrangement 100; characterized in that : the optically active semiconductor layer comprises optically active semiconducting structures that are selected from: Rb 2 Sn m I 6 , Cs 2 Sn m I 6 , Cs 2 Sn m Cl 6 , Rb 2 Sn m Cl 6 , CsSn m I 3 , Cs 2 Sn m Br 6 , Rb 2 Sn m Br 6 , and any combination of them; wherein each value of m, independently of the other, is between 0.2 and 6.
An electronic device comprising: a housing ; a display module that includes a first panel including a first surface , a second surface opposite to the first surface , and a plurality of pixels disposed between the first surface and the second surface , a cover layer disposed on the first surface of the first panel and configured to form one surface of the housing , and a second panel disposed on the second surface of the first panel ; and a sensor coupled to the display module and configured to form a sensing area on the one surface of the housing , wherein the display module includes an opening that is formed through the second panel and in which the sensor is disposed, wherein the sensor includes an active area and an inactive area formed around the active area , wherein a first adhesive material is formed between the active area and the first panel , and characterised in that a second adhesive material different from the first adhesive material is formed between at least a portion of the inactive area and the first panel . a housing ; a display module that includes a first panel including a first surface , a second surface opposite to the first surface , and a plurality of pixels disposed between the first surface and the second surface , a cover layer disposed on the first surface of the first panel and configured to form one surface of the housing , and a second panel disposed on the second surface of the first panel ; and a sensor coupled to the display module and configured to form a sensing area on the one surface of the housing , wherein the display module includes an opening that is formed through the second panel and in which the sensor is disposed, wherein the sensor includes an active area and an inactive area formed around the active area , wherein a first adhesive material is formed between the active area and the first panel , and characterised in that a second adhesive material different from the first adhesive material is formed between at least a portion of the inactive area and the first panel .
A method for testing and/or calibrating a thermopile based device , the method comprising: applying an electrical bias of a first polarity to the thermopile based device and measuring a first value of an electrical parameter; and applying an electrical bias of a second polarity to the thermopile based device and measuring a second value of an electrical parameter wherein said electrical bias of the first polarity and said electrical bias of the second polarity are applied to at least one thermopile , and wherein the first polarity and the second polarity are opposite polarities, and wherein the electrical bias of the first polarity and the electrical bias of the second polarity have a substantially equal magnitude; determining the magnitudes of the first value and the second value; calculating a value of the absolute difference between the magnitude of the first value and the magnitude of the second value, wherein the absolute difference between the magnitude of the first value and the magnitude of the second value is based on the voltage generated in the thermopile due to heating after the voltage generated from the resistance of the material of the thermopile is cancelled out. applying an electrical bias of a first polarity to the thermopile based device and measuring a first value of an electrical parameter; and applying an electrical bias of a second polarity to the thermopile based device and measuring a second value of an electrical parameter wherein said electrical bias of the first polarity and said electrical bias of the second polarity are applied to at least one thermopile , and wherein the first polarity and the second polarity are opposite polarities, and wherein the electrical bias of the first polarity and the electrical bias of the second polarity have a substantially equal magnitude; determining the magnitudes of the first value and the second value; calculating a value of the absolute difference between the magnitude of the first value and the magnitude of the second value, wherein the absolute difference between the magnitude of the first value and the magnitude of the second value is based on the voltage generated in the thermopile due to heating after the voltage generated from the resistance of the material of the thermopile is cancelled out.
A silicon nitride powder having an amount of internal oxygen of 0.6 mass% or less, the amount being measured by the following method, wherein a peak 1 derived from surface oxygen, a peak 2 derived from internal oxygen and a peak 3 derived from nitrogen are detected when 0.01g of the silicon nitride powder is set in an oxygen and nitrogen analyzing device, and the temperature is raised from 20°C to 2,000°C at a heating rate of 8°C/second in a helium gas atmosphere, wherein the peak 1 and the peak 2 are divided by the temperature T 1 at which peak 3 rises, and wherein the amount of internal oxygen and an amount of surface oxygen are determined from an integrated value of the peak 1 and the peak 2. wherein a peak 1 derived from surface oxygen, a peak 2 derived from internal oxygen and a peak 3 derived from nitrogen are detected when 0.01g of the silicon nitride powder is set in an oxygen and nitrogen analyzing device, and the temperature is raised from 20°C to 2,000°C at a heating rate of 8°C/second in a helium gas atmosphere, wherein the peak 1 and the peak 2 are divided by the temperature T 1 at which peak 3 rises, and wherein the amount of internal oxygen and an amount of surface oxygen are determined from an integrated value of the peak 1 and the peak 2.
Lock for locking a movably mounted flap, door, drawer or the like, on a body , a door frame, a wall or the like, having a locking element and a movably mounted latch , wherein the latch locks in a closed position on the locking element when the lock is closed and is disengaged from the locking element when the lock is open, and wherein the lock has an adjusting element with an actuating element (51.1) for displacing the latch from its closed position into its unlocked position against the force of a restoring element acting directly or indirectly on the latch , wherein the adjusting element can be displaced from a neutral position into at least two different actuating directions via the actuating element (51.1), and in that the adjusting element is designed to displace the latch from its closed position into its unlocked position irrespective of the selected actuating direction. characterised in that the actuating element (51.1) is connected to a rotatably mounted lever arm (51.4) of a lever element , the lever end of which facing away from its axis of rotation can be adjusted in two adjustment directions by actuating the actuating element (51.1), in that the lever arm (51.4) acts in one of the directions of adjustment starting from the neutral position on a rotatably mounted deflection lever element in such a way that an end of a deflection lever (53.1) of the deflection lever element facing away from its axis of rotation moves in the opposite direction of adjustment and that in each case the lever end or deflection lever end moved from the closed position into the unlocked position of the latch is in engagement with the latch .
A memory device comprising: a memory cell array ; and a transmitter , wherein the transmitter comprises: a pulse amplitude modulation, hereinafter referred to as PAM, encoder configured to generate a first input signal (ENCa) based on PAM-n, where n is an integer greater than or equal to 4, from data (DATA) read from the memory cell array ; a pre-driver configured to generate a second input signal (ENCb) based on the first input signal (ENCa) and based on a calibration code signal (CALI_CODE), and output the second input signal using a first power voltage (VDD2H); and a driver configured to output a data signal, hereinafter referred to as DQ signal, based on the PAM-n using a second power voltage (VDDQ) lower than the first power voltage (VDD2H) in response to the second input signal (ENCb), wherein a swing period of the DQ signal is based on a type of a termination element of a memory controller receiving the DQ signal through a channel. a memory cell array ; and a transmitter , wherein the transmitter comprises: a pulse amplitude modulation, hereinafter referred to as PAM, encoder configured to generate a first input signal (ENCa) based on PAM-n, where n is an integer greater than or equal to 4, from data (DATA) read from the memory cell array ; a pre-driver configured to generate a second input signal (ENCb) based on the first input signal (ENCa) and based on a calibration code signal (CALI_CODE), and output the second input signal using a first power voltage (VDD2H); and a driver configured to output a data signal, hereinafter referred to as DQ signal, based on the PAM-n using a second power voltage (VDDQ) lower than the first power voltage (VDD2H) in response to the second input signal (ENCb), a pulse amplitude modulation, hereinafter referred to as PAM, encoder configured to generate a first input signal (ENCa) based on PAM-n, where n is an integer greater than or equal to 4, from data (DATA) read from the memory cell array ; a pre-driver configured to generate a second input signal (ENCb) based on the first input signal (ENCa) and based on a calibration code signal (CALI_CODE), and output the second input signal using a first power voltage (VDD2H); and a driver configured to output a data signal, hereinafter referred to as DQ signal, based on the PAM-n using a second power voltage (VDDQ) lower than the first power voltage (VDD2H) in response to the second input signal (ENCb), wherein a swing period of the DQ signal is based on a type of a termination element of a memory controller receiving the DQ signal through a channel.