A reactive sputtering apparatus comprising: a film formation chamber; a substrate holder provided in the film formation chamber and formed in a flat plate-like shape, the substrate holder holding a substrate to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a reactive gas introducer configured to introduce a reactive gas into the film formation chamber; a DC power source configured to supply electric power to the two or more sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage, each pulse-wave conversion switch being connected to each sputtering electrode one on one; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches independently in accordance with the programmed pulse generation control signal pattern; and a reactive gas introduction switch configured to control introduction of the reactive gas from the reactive gas introducer to the film formation chamber on a basis of the pulse generation control signal pattern from the programmable transmitter. a film formation chamber; a substrate holder provided in the film formation chamber and formed in a flat plate-like shape, the substrate holder holding a substrate to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a reactive gas introducer configured to introduce a reactive gas into the film formation chamber; a DC power source configured to supply electric power to the two or more sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage, each pulse-wave conversion switch being connected to each sputtering electrode one on one; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches independently in accordance with the programmed pulse generation control signal pattern; and a reactive gas introduction switch configured to control introduction of the reactive gas from the reactive gas introducer to the film formation chamber on a basis of the pulse generation control signal pattern from the programmable transmitter. <EOS>