mhurhangee/patent-ind-claim-en huggingface dataset:
A method for a User Equipment, UE, operating in a wireless communication system, the method comprising: transmitting, by a transmitting Packet Data Convergence Protocol, PDCP, entity of the UE to a receiving PDCP entity of a peer UE, first PDCP status variables via a direct interface between the UE and the peer UE; transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, a first PDCP data Protocol Data Unit, PDU, via the direct interface; transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, second PDCP status variables via the direct interface; and transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, a second PDCP data PDU via the direct interface, wherein the first PDCP status variables are used for deciphering the first PDCP data PDU by the peer UE, and the second PDCP status variables are used for deciphering the second PDCP data PDU by the peer UE. transmitting, by a transmitting Packet Data Convergence Protocol, PDCP, entity of the UE to a receiving PDCP entity of a peer UE, first PDCP status variables via a direct interface between the UE and the peer UE; transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, a first PDCP data Protocol Data Unit, PDU, via the direct interface; transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, second PDCP status variables via the direct interface; and transmitting, by the transmitting PDCP entity of the UE to the receiving PDCP entity of the peer UE, a second PDCP data PDU via the direct interface, wherein the first PDCP status variables are used for deciphering the first PDCP data PDU by the peer UE, and the second PDCP status variables are used for deciphering the second PDCP data PDU by the peer UE.
An electronic device, comprising: a drift region ; a Schottky contact on a surface of the drift region; an edge termination structure in the drift region adjacent the Schottky contact, wherein the edge termination structure comprises a recessed region that is recessed from the surface of the drift region by a distance d, the recessed region defining a mesa including the surface as a mesa surface that is vertically offset from a floor of the recessed region : a guard ring in an edge of the mesa surface ; a plurality of floating guard rings in the recessed region; and a sidewall in the drift region between the Schottky contact and the recessed region, and wherein a first floating guard ring of the plurality of floating guard rings is located at a base of the recessed region adjacent the sidewall; a lightly doped region that extends across the recessed region between adjacent ones of the plurality of floating guard rings, wherein the lightly doped region, the guard ring in the mesa surface, and the plurality of floating guard rings have a second conductivity that is opposite a first conductivity of the drift region, and wherein the lightly doped region has a depth less than a depth of the plurality of floating guard rings and a doping concentration lower than a doping concentration of the plurality of floating guard rings. a drift region ; a Schottky contact on a surface of the drift region; an edge termination structure in the drift region adjacent the Schottky contact, wherein the edge termination structure comprises a recessed region that is recessed from the surface of the drift region by a distance d, the recessed region defining a mesa including the surface as a mesa surface that is vertically offset from a floor of the recessed region : a guard ring in an edge of the mesa surface ; a plurality of floating guard rings in the recessed region; and a sidewall in the drift region between the Schottky contact and the recessed region, and wherein a first floating guard ring of the plurality of floating guard rings is located at a base of the recessed region adjacent the sidewall; a lightly doped region that extends across the recessed region between adjacent ones of the plurality of floating guard rings, wherein the lightly doped region, the guard ring in the mesa surface, and the plurality of floating guard rings have a second conductivity that is opposite a first conductivity of the drift region, and wherein the lightly doped region has a depth less than a depth of the plurality of floating guard rings and a doping concentration lower than a doping concentration of the plurality of floating guard rings.
A method for manufacturing an optical element or a master having a multi-level structure, the method comprising: providing a substrate that includes a first substrate portion and a second substrate portion , the first substrate portion being on the second substrate portion , and the first substrate portion having a composition that differs from a composition of the second substrate portion ; forming first trenches through a surface of the substrate , wherein the first trenches extend through the first substrate portion and partially into the second substrate portion , after forming the first trenches, depositing a mask on portions of the surface of the substrate; subsequently forming second trenches through the surface of the substrate , wherein the second trenches are disposed in portions of the substrate on which the mask is not present, wherein a depth (D1) of the first trenches differs from a depth (D2) of the second trenches , and wherein forming the second trenches includes etching through the first substrate portion , wherein the second substrate portion serves as an etch stop during formation of the second trenches . providing a substrate that includes a first substrate portion and a second substrate portion , the first substrate portion being on the second substrate portion , and the first substrate portion having a composition that differs from a composition of the second substrate portion ; forming first trenches through a surface of the substrate , wherein the first trenches extend through the first substrate portion and partially into the second substrate portion , after forming the first trenches, depositing a mask on portions of the surface of the substrate; subsequently forming second trenches through the surface of the substrate , wherein the second trenches are disposed in portions of the substrate on which the mask is not present, wherein a depth (D1) of the first trenches differs from a depth (D2) of the second trenches , and wherein forming the second trenches includes etching through the first substrate portion , wherein the second substrate portion serves as an etch stop during formation of the second trenches .
A thermoplastic resin composition comprising: a thermoplastic resin comprising a rubber-modified vinyl graft copolymer and an aromatic vinyl copolymer resin; a light stabilizer comprising a hindered amine light stabilizer (HALS) and a benzotriazole UV stabilizer; and zinc oxide, the zinc oxide having an average particle diameter of 0.5 μm to 3 μm and a BET specific surface area of 1 m 2 /g to 10 m 2 /g. a thermoplastic resin comprising a rubber-modified vinyl graft copolymer and an aromatic vinyl copolymer resin; a light stabilizer comprising a hindered amine light stabilizer (HALS) and a benzotriazole UV stabilizer; and zinc oxide, the zinc oxide having an average particle diameter of 0.5 μm to 3 μm and a BET specific surface area of 1 m 2 /g to 10 m 2 /g.
A compound having a following general formula (I) or a pharmaceutically acceptable salt thereof: wherein R 1 , R 2 , R 3 represent a halogen, an alkyl of C to C 6 , a trifluoromethyl, a cyano, an amino, C(O)OR a , CORa, or ORa; R a represents H, the alkyl of C 1 to C 6 , the amino or the trifluoromethyl; X is N or CH. R a represents H, the alkyl of C 1 to C 6 , the amino or the trifluoromethyl; X is N or CH.
A content supply apparatus that delivers streams of content through a plurality of different networks, respectively, according to an adaptive streaming technique, the content supply apparatus comprising: a generating unit adapted to generate metadata describing Quality of Service, QoS, parameters for the respective plurality of different networks through which the streams are delivered, and condition values of the QoS parameters; and a delivering unit adapted to deliver the generated metadata to a receiver, wherein the QoS parameters are delay, delay jitter, loss, throughput, radio field intensity, or bit error rate, and the condition values are an upper limit, a lower limit, or a specified value; wherein the generating unit is further adapted to generate an extended User Service Description, USD, as the metadata, and the delivering unit is further adapted to multicast the generated extended USD using File Delivery over Unidirectional Transport, FLUTE, wherein the generating unit is further adapted to introduce a RequiredQoS element in a DeliveryMethod element of the USD, and describes, in the RequiredQoS element, the QoS parameters for the respective plurality of different networks through which the streams are delivered, and the condition values of the QoS parameters, and wherein the QoS parameters in the RequiredQoS element indicate a required physical layer signal quality. a generating unit adapted to generate metadata describing Quality of Service, QoS, parameters for the respective plurality of different networks through which the streams are delivered, and condition values of the QoS parameters; and a delivering unit adapted to deliver the generated metadata to a receiver, wherein the QoS parameters are delay, delay jitter, loss, throughput, radio field intensity, or bit error rate, and the condition values are an upper limit, a lower limit, or a specified value; wherein the generating unit is further adapted to generate an extended User Service Description, USD, as the metadata, and the delivering unit is further adapted to multicast the generated extended USD using File Delivery over Unidirectional Transport, FLUTE, wherein the generating unit is further adapted to introduce a RequiredQoS element in a DeliveryMethod element of the USD, and describes, in the RequiredQoS element, the QoS parameters for the respective plurality of different networks through which the streams are delivered, and the condition values of the QoS parameters, and wherein the QoS parameters in the RequiredQoS element indicate a required physical layer signal quality.
A hydraulic system, comprising: a hydraulic circuit including a hydraulic component; a sensor for sensing a characteristic of the hydraulic component; an energy harvester configured to harvest energy from the hydraulic circuit; and a battery; characterised by an energy combiner receiving power outputs from the energy harvester and the battery, the energy combiner configured to selectively power the sensor: from the battery alone in response to the output of the energy harvester being below a first predetermined level; from the battery and the energy harvester together in response to the output of the energy harvester being below a second predetermined level that is higher than the first predetermined level; and from the energy harvester alone in response to the output of the energy harvester being at or above the second predetermined level; wherein the second predetermined level is a power-on voltage of the sensor. a hydraulic circuit including a hydraulic component; a sensor for sensing a characteristic of the hydraulic component; an energy harvester configured to harvest energy from the hydraulic circuit; and a battery; characterised by an energy combiner receiving power outputs from the energy harvester and the battery, the energy combiner configured to selectively power the sensor: from the battery alone in response to the output of the energy harvester being below a first predetermined level; from the battery and the energy harvester together in response to the output of the energy harvester being below a second predetermined level that is higher than the first predetermined level; and from the energy harvester alone in response to the output of the energy harvester being at or above the second predetermined level; wherein the second predetermined level is a power-on voltage of the sensor. from the battery alone in response to the output of the energy harvester being below a first predetermined level; from the battery and the energy harvester together in response to the output of the energy harvester being below a second predetermined level that is higher than the first predetermined level; and from the energy harvester alone in response to the output of the energy harvester being at or above the second predetermined level; wherein the second predetermined level is a power-on voltage of the sensor.
A method for manufacturing a light-emitting electrochemical cell comprising: a first electrode , a second electrode , and a first light-emitting active material in electrical contact with and separating the first and second electrodes, the first active material comprising mobile ions in an amount sufficient for doping the active material, wherein the method comprises a step of depositing the first active material by spray-coating at an ambient gas pressure of at least about 1 kPa, characterized in that the step of spray-coating is performed such that spray droplets , when arriving at a surface being coated, are sufficiently wet to adhere to the surface, and sufficiently dry to prevent fluid communication with adjacent droplets. a first electrode , a second electrode , and a first light-emitting active material in electrical contact with and separating the first and second electrodes, the first active material comprising mobile ions in an amount sufficient for doping the active material, wherein the method comprises a step of depositing the first active material by spray-coating at an ambient gas pressure of at least about 1 kPa, characterized in that the step of spray-coating is performed such that spray droplets , when arriving at a surface being coated, are sufficiently wet to adhere to the surface, and sufficiently dry to prevent fluid communication with adjacent droplets.
Electric machine, having a shaft as well as a cooling system , which comprises at least one cooling channel formed by at least one component of the electric machine , wherein the cooling system is filled with an electrically conductive coolant circulating through the cooling system , wherein the shaft is in electrical contact with the coolant and is grounded by the coolant, wherein the electric machine comprises a housing , wherein the housing has at least one connection communicating with the cooling system , by means of which connection the cooling system is connected or can be connected to a cooling circuit, wherein the coolant can be supplied through the cooling circuit to the cooling system via the at least one connection .
A basestation , for use in a cellular communications network, wherein said basestation is adapted to provide a cellular communications service in at least one active cellular communications network by transmitting signals on system downlink channels of the active network and by receiving signals on system uplink channels of the active network; said basestation is adapted to receive signals on system downlink channels of the active network; said basestation is adapted to receive signals on system downlink channels of at least one additional network wherein the basestation is unable to transmit signals on system downlink channels of the additional network, wherein the active network is UMTS network and the additional network is a GSM network; and said basestation is adapted to receive signals on system downlink channels of the GSM network, and to construct a list of neighbouring GSM cells based on the received signals, for use in a possible handover to the GSM network, wherein constructing a list of neighbouring GSM cells further comprises constructing a list of potential surrounding GSM macrocells based on neighbour cells lists from nearby macrocells . said basestation is adapted to provide a cellular communications service in at least one active cellular communications network by transmitting signals on system downlink channels of the active network and by receiving signals on system uplink channels of the active network; said basestation is adapted to receive signals on system downlink channels of the active network; said basestation is adapted to receive signals on system downlink channels of at least one additional network wherein the basestation is unable to transmit signals on system downlink channels of the additional network, wherein the active network is UMTS network and the additional network is a GSM network; and said basestation is adapted to receive signals on system downlink channels of the GSM network, and to construct a list of neighbouring GSM cells based on the received signals, for use in a possible handover to the GSM network, wherein constructing a list of neighbouring GSM cells further comprises constructing a list of potential surrounding GSM macrocells based on neighbour cells lists from nearby macrocells .
A compound harmonic actuator , comprising: a housing ; a circular gear including a first number of first teeth , which is fixed relative to the housing ; a flex gear including permanent magnets , the flex gear including a second number of second teeth , the second number being different to the first number, the flex gear being rotatable relative to the housing ; and a coil assembly generating a magnetic field with which the permanent magnets interact deforming the flex gear such that the second teeth engage with the first teeth resulting in flex gear rotation; the flex gear comprises a polymeric material in which the permanent magnets are suspended and arranged along a circumferential length of the flex gear , characterized by that: the compound harmonic actuator further comprising an output arm coupled to the flex gear and a secondary circular gear comprising a third number of teeth , : the flex gear comprises a fourth number of fourth teeth , the third and fourth numbers being different, and the deformation of the flex gear is such that the third and fourth teeth engage to drive rotation of the secondary circular gear . a housing ; a circular gear including a first number of first teeth , which is fixed relative to the housing ; a flex gear including permanent magnets , the flex gear including a second number of second teeth , the second number being different to the first number, the flex gear being rotatable relative to the housing ; and a coil assembly generating a magnetic field with which the permanent magnets interact deforming the flex gear such that the second teeth engage with the first teeth resulting in flex gear rotation; the flex gear comprises a polymeric material in which the permanent magnets are suspended and arranged along a circumferential length of the flex gear , characterized by that: the compound harmonic actuator further comprising an output arm coupled to the flex gear and a secondary circular gear comprising a third number of teeth , : the flex gear comprises a fourth number of fourth teeth , the third and fourth numbers being different, and the deformation of the flex gear is such that the third and fourth teeth engage to drive rotation of the secondary circular gear . the flex gear comprises a fourth number of fourth teeth , the third and fourth numbers being different, and the deformation of the flex gear is such that the third and fourth teeth engage to drive rotation of the secondary circular gear .
A light emitting device comprising: a first conductivity type semiconductor layer providing a roughness on an upper surface thereof and comprising a photo electrochemical (PEC) etching control layer ; an active layer under the first conductivity type semiconductor layer ; a second conductivity type semiconductor layer under the active layer ; a reflective electrode electrically connected to the second conductivity type semiconductor layer ; and a first electrode electrically connected to the first conductivity type semiconductor layer , wherein the first conductivity type semiconductor layer comprises a first semiconductor layer and a second semiconductor layer , wherein said PEC etching control layer is disposed between the first semiconductor layer and the second semiconductor layer , said roughness being provided on a top surface of said first semiconductor layer ; characterized in that the PEC etching control layer comprises AlN layer and has an activated doping concentration of zero ; and in that an area of a portion of the PEC etching control layer is exposed by the roughness . a first conductivity type semiconductor layer providing a roughness on an upper surface thereof and comprising a photo electrochemical (PEC) etching control layer ; an active layer under the first conductivity type semiconductor layer ; a second conductivity type semiconductor layer under the active layer ; a reflective electrode electrically connected to the second conductivity type semiconductor layer ; and a first electrode electrically connected to the first conductivity type semiconductor layer , wherein the first conductivity type semiconductor layer comprises a first semiconductor layer and a second semiconductor layer , wherein said PEC etching control layer is disposed between the first semiconductor layer and the second semiconductor layer , said roughness being provided on a top surface of said first semiconductor layer ; characterized in that the PEC etching control layer comprises AlN layer and has an activated doping concentration of zero ; and in that an area of a portion of the PEC etching control layer is exposed by the roughness .
A stainless steel pipe exhibiting excellent corrosion resistance, wherein the stainless steel pipe has a polishing mark for antiglare property on a surface, an oxide film exhibiting color is not present on the surface, and an average number of surface defects including covering by a metal base of 5 μm or more on the surface is suppressed to 5 or fewer per 0.01 mm 2 . the stainless steel pipe has a polishing mark for antiglare property on a surface, an oxide film exhibiting color is not present on the surface, and an average number of surface defects including covering by a metal base of 5 μm or more on the surface is suppressed to 5 or fewer per 0.01 mm 2 .