A method of manufacturing a semiconductor die device , comprising: mounting a first semiconductor die on a second semiconductor die of a first semiconductor wafer , the mounting of the first semiconductor die on the second semiconductor die including forming a first insulating bonding layer having a first glass layer and a second glass layer between and bonding the first semiconductor die and the second semiconductor die and annealing to bond the first glass layer to the second glass layer and to metallurgically bond conductor structures of the first semiconductor die and conductor structures of the second semiconductor die; singulating the second semiconductor die from the first semiconductor wafer to yield a first die stack; mounting the second semiconductor die of the first die stack on a third semiconductor die of a second semiconductor wafer ; singulating the third semiconductor die from the second semiconductor wafer to yield a second die stack ; mounting the second die stack on a fourth semiconductor die of a third semiconductor wafer ; mounting a first dummy component on the third semiconductor wafer adjacent to a first side of the second die stack and a second dummy component on the third semiconductor wafer adjacent to a second side of the second die stack opposite to the first side, the first dummy component and the second dummy component being mounted at least partially on the fourth semiconductor die to facilitate heat transfer from the fourth semiconductor die ; and molding a material positioned between the second die stack and the first dummy component and between the second die stack and the second dummy component , wherein the molding material at least partially encases the second die stack . mounting a first semiconductor die on a second semiconductor die of a first semiconductor wafer , the mounting of the first semiconductor die on the second semiconductor die including forming a first insulating bonding layer having a first glass layer and a second glass layer between and bonding the first semiconductor die and the second semiconductor die and annealing to bond the first glass layer to the second glass layer and to metallurgically bond conductor structures of the first semiconductor die and conductor structures of the second semiconductor die; singulating the second semiconductor die from the first semiconductor wafer to yield a first die stack; mounting the second semiconductor die of the first die stack on a third semiconductor die of a second semiconductor wafer ; singulating the third semiconductor die from the second semiconductor wafer to yield a second die stack ; mounting the second die stack on a fourth semiconductor die of a third semiconductor wafer ; mounting a first dummy component on the third semiconductor wafer adjacent to a first side of the second die stack and a second dummy component on the third semiconductor wafer adjacent to a second side of the second die stack opposite to the first side, the first dummy component and the second dummy component being mounted at least partially on the fourth semiconductor die to facilitate heat transfer from the fourth semiconductor die ; and molding a material positioned between the second die stack and the first dummy component and between the second die stack and the second dummy component , wherein the molding material at least partially encases the second die stack . <EOS>