mhurhangee/patent-ind-claim-en huggingface dataset:
A piezoelectric laminate comprising, on a substrate in the following order: a lower electrode layer ; and a piezoelectric film containing a perovskite-type oxide as a main component, wherein the piezoelectric film has an oxygen-deficient region in a region in contact with the lower electrode layer , in a case where an average value of oxygen amounts in a region centrally located among three regions obtained by dividing the piezoelectric film into three equal parts in a thickness direction is denoted as a first average oxygen amount, and an average value of oxygen amounts in the oxygen-deficient region is denoted as a second average oxygen amount, a ratio R of the second average oxygen amount to the first average oxygen amount is less than 0.97, characterised in that a thickness of the oxygen-deficient region is 120 nm or more and is 1/3 or less of a thickness of the entire piezoelectric film . a lower electrode layer ; and a piezoelectric film containing a perovskite-type oxide as a main component, wherein the piezoelectric film has an oxygen-deficient region in a region in contact with the lower electrode layer , in a case where an average value of oxygen amounts in a region centrally located among three regions obtained by dividing the piezoelectric film into three equal parts in a thickness direction is denoted as a first average oxygen amount, and an average value of oxygen amounts in the oxygen-deficient region is denoted as a second average oxygen amount, a ratio R of the second average oxygen amount to the first average oxygen amount is less than 0.97, characterised in that a thickness of the oxygen-deficient region is 120 nm or more and is 1/3 or less of a thickness of the entire piezoelectric film .
An apparatus comprising: a plurality of phase change memory cells , wherein individual memory cells of the plurality of memory cells are in a set state or a reset state, have a threshold voltage, and are configured to store one or more bits of data; a bias logic coupled with the individual memory cells , the bias logic to: apply a dummy-read voltage to the plurality of memory cells to return the plurality of memory cells that are in a set state to a voltage pre-drift state; apply , subsequent to the application of the dummy-read voltage, a read voltage to the plurality of memory cells in order to identify, based on a current detected in response to application of the read voltage, a state of a bit of data in a memory cell of the individual memory cells; and characterized in that the bias logic is further to: apply , subsequent to the application of the read voltage, a voltage bias pulse to a subset of the plurality of memory cells that are in the reset state to accelerate a voltage drift of the memory cells in the reset state, wherein application of the voltage bias pulse is different than application of a reset pulse to the plurality of memory cells. a plurality of phase change memory cells , wherein individual memory cells of the plurality of memory cells are in a set state or a reset state, have a threshold voltage, and are configured to store one or more bits of data; a bias logic coupled with the individual memory cells , the bias logic to: apply a dummy-read voltage to the plurality of memory cells to return the plurality of memory cells that are in a set state to a voltage pre-drift state; apply , subsequent to the application of the dummy-read voltage, a read voltage to the plurality of memory cells in order to identify, based on a current detected in response to application of the read voltage, a state of a bit of data in a memory cell of the individual memory cells; and characterized in that the bias logic is further to: apply , subsequent to the application of the read voltage, a voltage bias pulse to a subset of the plurality of memory cells that are in the reset state to accelerate a voltage drift of the memory cells in the reset state, wherein application of the voltage bias pulse is different than application of a reset pulse to the plurality of memory cells. apply a dummy-read voltage to the plurality of memory cells to return the plurality of memory cells that are in a set state to a voltage pre-drift state; apply , subsequent to the application of the dummy-read voltage, a read voltage to the plurality of memory cells in order to identify, based on a current detected in response to application of the read voltage, a state of a bit of data in a memory cell of the individual memory cells; and characterized in that the bias logic is further to: apply , subsequent to the application of the read voltage, a voltage bias pulse to a subset of the plurality of memory cells that are in the reset state to accelerate a voltage drift of the memory cells in the reset state, wherein application of the voltage bias pulse is different than application of a reset pulse to the plurality of memory cells.
A photocurable resin composition, comprising (A) an allylic polymer and (B) a gelling agent, the allylic polymer (A) being produced by polymerization of an allylic compound represented by the following formula (I): wherein R 1 and R 2 each represent H or CH 3 ; a represents 2; and X represents any of the following cyclic structures:
Method for generatively producing and coding a three-dimensional component, comprising the following steps Providing a metallic starting material, Feeding a process gas to the starting material, Melting the starting material with a heat source, Repeating the above steps, characterized in that in at least one predetermined time interval during melting, a gaseous coding component or a coding gas containing a coding component is added to the starting material, in such a way that the use of the coding component in the finished object can be detected; and that information about the coding component is recorded and the gaseous coding component comprises one or more isotopes of at least one gas and the proportion of the at least one isotope is modified in comparison with the naturally occurring proportion of this isotope in the gas and that the metallic starting material is provided by means of powder bed or powder feed or wire feed and the heat source is a laser beam or a plasma arc/arc.
A medicament carrier composition for use in forming a film, said composition comprising; a medicament; a polymer component comprising a polyvinylpyrrolidone having a weight average molecular weight from 700,000 to 1,000,000 g/mol; and an auxiliary polymer selected from the group of polyvinylacetates, polyvinylpyrrolidones, having weight average molecular weights of less than 700,000 g/mol, polyalkylacrylates, polyvinylalcohols, and combinations thereof, wherein said polymer component is present in an amount of from 10 to 50 parts by weight per 100 parts by weight of said medicament carrier composition, wherein said medicament carrier composition has a viscosity of from 500 to 5,000 cps at 25°C, wherein the film has a dissolution time of less than or equal to 300 seconds, as determined by a procedure wherein 2.15 cm by 3.3 cm sample of the film is placed into 100 cm 3 of deionized water and stirred at a rate of 100 rpm at room temperature; and wherein the composition is substantially free of cellulose. a medicament; a polymer component comprising a polyvinylpyrrolidone having a weight average molecular weight from 700,000 to 1,000,000 g/mol; and an auxiliary polymer selected from the group of polyvinylacetates, polyvinylpyrrolidones, having weight average molecular weights of less than 700,000 g/mol, polyalkylacrylates, polyvinylalcohols, and combinations thereof, wherein said polymer component is present in an amount of from 10 to 50 parts by weight per 100 parts by weight of said medicament carrier composition, wherein said medicament carrier composition has a viscosity of from 500 to 5,000 cps at 25°C, wherein the film has a dissolution time of less than or equal to 300 seconds, as determined by a procedure wherein 2.15 cm by 3.3 cm sample of the film is placed into 100 cm 3 of deionized water and stirred at a rate of 100 rpm at room temperature; and wherein the composition is substantially free of cellulose.
A method for setting up a circumferential register for a print job in a multi-color printing press having a first and at least one second printing cylinder , wherein the method comprises the following steps: a) insertion of the printing cylinders into printing units b) subsequent positioning of the printing cylinders in the circumferential direction relative to the printing unit frame on the basis of a positioning mark located on the printing cylinder c) subsequent printing of a print mark located on the first printing cylinder seen in the transport direction of a material web d) subsequent scanning of the print mark in at least a second printing unit, in which the at least one second printing cylinder is inserted, by means of the print mark sensor e) subsequent setting of the at least one second printing cylinder in the circumferential direction on the basis of geometric data of the printing unit, which data comprise the relative position of the print mark sensor to the printing unit frame, the circumference of the printing cylinder, the angular position of the printing cylinder and the position of the impression cylinder , and the point in time, at which the printing mark sensor scans the print mark , as well as the web speed of the material web, so that a register mark of the at least one second printing cylinder is in the capture range of the print mark sensor, wherein the at least one second printing unit is located in a non-printing arrangement. a) insertion of the printing cylinders into printing units b) subsequent positioning of the printing cylinders in the circumferential direction relative to the printing unit frame on the basis of a positioning mark located on the printing cylinder c) subsequent printing of a print mark located on the first printing cylinder seen in the transport direction of a material web d) subsequent scanning of the print mark in at least a second printing unit, in which the at least one second printing cylinder is inserted, by means of the print mark sensor e) subsequent setting of the at least one second printing cylinder in the circumferential direction on the basis of geometric data of the printing unit, which data comprise the relative position of the print mark sensor to the printing unit frame, the circumference of the printing cylinder, the angular position of the printing cylinder and the position of the impression cylinder , and the point in time, at which the printing mark sensor scans the print mark , as well as the web speed of the material web, so that a register mark of the at least one second printing cylinder is in the capture range of the print mark sensor, wherein the at least one second printing unit is located in a non-printing arrangement.
A cover device for a cutting and dust or slurry collecting assembly, the cover device having a front end , a rear end , a top surface , a bottom surface , elongated sidewalls and possible inner sidewalls, and a longitudinal passage for receiving a saw blade with blade radius R, said passage extending through the cover device from its top surface to its bottom surface in a region between the front and rear ends of the cover device, wherein the cover device is arranged to be pivotally connected or connectable to a blade guard of the saw blade via a hinge , the cover device comprising a discharge member provided at the rear of said hinge and has an outlet which can be connected to a vacuum source, the cover device comprising a connection member arranged to connect the discharge member with at least one of the longitudinal passage and the cut created rear of the longitudinal passage, wherein a rear arm distance (Lr) between the hinge and the rear end is bigger than 0,2 times the blade radius R, and preferably bigger than 0,25R, thereby enabling a turning of the cover device by pressing the rear end towards a structure to be cut, characterised in that the hinge is arranged with a spring force urging the front end up towards the blade guard.
A method for gain calibration of an imaging system comprising an array of photodetectors and detector electronic circuitry for reading out image data from the array of photodetectors, wherein the detector electronic circuitry includes an integrator with an integrator capacitor having a nominal capacitance and a voltage dependent actual capacitance, and a gain of the detector electronic circuitry is depending on the integrator capacitance, the method comprising: varying a signal voltage across the integrator capacitor by varying at least one input parameter to the integrator over a plurality of known values; determining the actual capacitance of the integrator capacitor from the known relationship between the signal voltage across the integrator capacitor and the capacitance for multiple signal voltages across the integrator capacitor generated by the variation of the at least one input parameter to the integrator; determining a mathematical relationship between the signal voltage across the integrator capacitor and the actual measured capacitance, which is used to calculate an actual gain; and modifying, for individual photodetectors, a gain value used by the imaging system using the determined mathematical relationship, wherein the gain value is an output of the mathematical relationship and the signal voltage across the integrator capacitor is an input to the mathematical relationship. varying a signal voltage across the integrator capacitor by varying at least one input parameter to the integrator over a plurality of known values; determining the actual capacitance of the integrator capacitor from the known relationship between the signal voltage across the integrator capacitor and the capacitance for multiple signal voltages across the integrator capacitor generated by the variation of the at least one input parameter to the integrator; determining a mathematical relationship between the signal voltage across the integrator capacitor and the actual measured capacitance, which is used to calculate an actual gain; and modifying, for individual photodetectors, a gain value used by the imaging system using the determined mathematical relationship, wherein the gain value is an output of the mathematical relationship and the signal voltage across the integrator capacitor is an input to the mathematical relationship.
An unworn sterile hydrogel contact lens immersed in a packaging solution and sealed in a package, said contact lens comprising: a) a polymeric lens body; b) about 0.25 μg to 10.0 μg of a cooling agent releasably adhered to the polymeric lens body; and c) an amount of a TRPV1 inhibitor either releasably adhered to the polymeric lens body or present in the packaging solution or both, with the proviso that when the TRPV1 inhibitor is hyaluronic acid, the hyaluronic acid is either releasably adhered to the polymeric lens body or both releasably adhered to the polymeric lens body and present in the packaging solution. a) a polymeric lens body; b) about 0.25 μg to 10.0 μg of a cooling agent releasably adhered to the polymeric lens body; and c) an amount of a TRPV1 inhibitor either releasably adhered to the polymeric lens body or present in the packaging solution or both, with the proviso that when the TRPV1 inhibitor is hyaluronic acid, the hyaluronic acid is either releasably adhered to the polymeric lens body or both releasably adhered to the polymeric lens body and present in the packaging solution.
A thermoelectric power generation system comprising: a first flow path along which a first fluid flows; a second flow path along which a second fluid having a lower temperature than the first fluid flows; a thermoelectric module arranged between the first flow path and the second flow path ; and a controller that switches between a power generation mode, in which the thermoelectric module is caused to generate electric power based on a difference between a temperature of the first fluid and a temperature of the second fluid, and a heating mode, in which a first surface of the thermoelectric module is heated using the Peltier effect caused by supplying electric power to the thermoelectric module , wherein a distance between the first surface and the first flow path is shorter than a distance between the first surface and the second flow path . a first flow path along which a first fluid flows; a second flow path along which a second fluid having a lower temperature than the first fluid flows; a thermoelectric module arranged between the first flow path and the second flow path ; and a controller that switches between a power generation mode, in which the thermoelectric module is caused to generate electric power based on a difference between a temperature of the first fluid and a temperature of the second fluid, and a heating mode, in which a first surface of the thermoelectric module is heated using the Peltier effect caused by supplying electric power to the thermoelectric module , wherein a distance between the first surface and the first flow path is shorter than a distance between the first surface and the second flow path .
A floor structure for a vehicle , comprising a composite panel , said panel including: - a lower metal plate ; - an upper metal plate ; and - a layer of thermal insulating material arranged between the lower and upper metal plates; the layer of thermal insulating material comprising a panel of wood or bark; characterized in that the upper metal plate is aluminum, and the lower metal plate is steel. - a lower metal plate ; - an upper metal plate ; and - a layer of thermal insulating material arranged between the lower and upper metal plates; the layer of thermal insulating material comprising a panel of wood or bark; characterized in that the upper metal plate is aluminum, and the lower metal plate is steel.
A semiconductor light-emitting element comprising: a semiconductor laminate containing a first conductivity type first semiconductor layer , a light-emitting layer disposed on the first semiconductor layer , and a second semiconductor layer which is disposed on the light-emitting layer and which has a second conductivity type reverse to the first conductivity type; a plurality of via holes (VH) formed in the semiconductor laminate from the second semiconductor layer side, penetrating the light-emitting layer and exposing the first semiconductor layer ; a second semiconductor layer side electrode extending on the second semiconductor layer and having light reflectivity, which is separated from each of the boundary edges of the second semiconductor layer and the plurality of via holes (VH); an insulating layer which covers side surfaces of the via holes (VH) of at least the light-emitting layer and the second semiconductor layer , which extends on the boundary edge portion of the second semiconductor layer side electrode , and which exposes at least part of the bottom of each of the plurality of via holes (VH); and a plurality of first semiconductor layer side electrodes which are electrically connected to the first semiconductor layer at the bottom of each of the plurality of via holes (VH), which are led to above the second semiconductor layer and the second semiconductor layer side electrode with the insulating layer intervening therebetween, which are disposed overlapping the second semiconductor layer side electrode without gaps, in a plan view, and which have light reflectivity. a semiconductor laminate containing a first conductivity type first semiconductor layer , a light-emitting layer disposed on the first semiconductor layer , and a second semiconductor layer which is disposed on the light-emitting layer and which has a second conductivity type reverse to the first conductivity type; a plurality of via holes (VH) formed in the semiconductor laminate from the second semiconductor layer side, penetrating the light-emitting layer and exposing the first semiconductor layer ; a second semiconductor layer side electrode extending on the second semiconductor layer and having light reflectivity, which is separated from each of the boundary edges of the second semiconductor layer and the plurality of via holes (VH); an insulating layer which covers side surfaces of the via holes (VH) of at least the light-emitting layer and the second semiconductor layer , which extends on the boundary edge portion of the second semiconductor layer side electrode , and which exposes at least part of the bottom of each of the plurality of via holes (VH); and a plurality of first semiconductor layer side electrodes which are electrically connected to the first semiconductor layer at the bottom of each of the plurality of via holes (VH), which are led to above the second semiconductor layer and the second semiconductor layer side electrode with the insulating layer intervening therebetween, which are disposed overlapping the second semiconductor layer side electrode without gaps, in a plan view, and which have light reflectivity.
A current collector , characterized in comprising: an insulation layer , a conductive layer , a first protective layer and a second protective layer , wherein the insulation layer is used to support the conductive layer , wherein the conductive layer is used to support an electrode active material layer located on a surface of the current collector and the conductive layer is located above at least one surface of the insulation layer , and the conductive layer has a thickness of D2 satisfying 300 nm ≤ D2 ≤ 2 μm, and wherein the first protective layer is arranged on a surface of the conductive layer facing towards the insulation layer , and the first protective layer is made of a material selected from a group consisting of metal, metal oxide, or conductive carbon, the metal is preferably selected from a group consisting of nickel, chromium, nickel-based alloy, or copper-based alloy; the metal oxide is preferably selected from a group consisting of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and the conductive carbon is preferably selected from a group consisting of carbon black, carbon nanotube, acetylene black, or graphene, the second protective layer is arranged on a surface of the conductive layer facing away from the insulation layer , the second protective layer is made of a material selected from a group consisting of metal, metal oxide, or conductive carbon, the metal is preferably selected from a group consisting of nickel, chromium, nickel-based alloy, or copper-based alloy; the metal oxide is preferably selected from a group consisting of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and the conductive carbon is preferably selected from a group consisting of carbon black, carbon nanotube, acetylene black, or graphene, wherein the first protective layer has a thickness of D3', the second protective layer has a thickness of D3, the thickness D3 of the second protective layer is larger than the thickness D3' of the first protective layer , and 1/2 D3≤D3'≤4/5 D3.