A chip-scale packaging light emitting device comprising: a flip-chip light emitting diode (LED) semiconductor die comprising an upper surface , a lower surface opposite to the upper surface , an edge surface , and a set of electrodes , wherein the edge surface extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die , and the set of electrodes is disposed on the lower surface of the LED semiconductor die ; and a chip-scale packaging structure comprising: a soft buffer layer comprising a top portion and an edge portion , wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface , the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface , and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer ; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface ; and an encapsulant structure disposed on the photoluminescent structure , wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer . a flip-chip light emitting diode (LED) semiconductor die comprising an upper surface , a lower surface opposite to the upper surface , an edge surface , and a set of electrodes , wherein the edge surface extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die , and the set of electrodes is disposed on the lower surface of the LED semiconductor die ; and a chip-scale packaging structure comprising: a soft buffer layer comprising a top portion and an edge portion , wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface , the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface , and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer ; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface ; and an encapsulant structure disposed on the photoluminescent structure , wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer . a soft buffer layer comprising a top portion and an edge portion , wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface , the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface , and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer ; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface ; and an encapsulant structure disposed on the photoluminescent structure , wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer . <EOS>