A semiconductor device comprising: a stress detection circuit ; and a wireless communication circuit , wherein the stress detection circuit comprises: a first ring oscillator (RO) whose oscillation frequency has a temperature dependency; a cumulative deterioration stress amount holding circuit (ST); and a control circuit (CN) having an operation determination threshold value, wherein the cumulative deterioration stress amount holding circuit (ST) includes: a first synchronization buffer (SB) configured to detect the oscillation frequency of the first ring oscillator (RO) and store that as heat stress information every unit counting period; and a first cumulative stress counter (SC) configured to accumulate the heat stress information and hold the accumulated value as a first cumulative stress count value, wherein the control circuit (CN) is configured to: determine a state of heat stress selected from a first state when the heat stress information exceeds the operation determination threshold value or a second state when the heat stress information falls below the operation determination threshold value, and start transmission of a cumulative heat stress information calculated from the first cumulative stress count value when the state of heat stress transits from the first state to the second state. a stress detection circuit ; and a wireless communication circuit , wherein the stress detection circuit comprises: a first ring oscillator (RO) whose oscillation frequency has a temperature dependency; a cumulative deterioration stress amount holding circuit (ST); and a control circuit (CN) having an operation determination threshold value, a first ring oscillator (RO) whose oscillation frequency has a temperature dependency; a cumulative deterioration stress amount holding circuit (ST); and a control circuit (CN) having an operation determination threshold value, wherein the cumulative deterioration stress amount holding circuit (ST) includes: a first synchronization buffer (SB) configured to detect the oscillation frequency of the first ring oscillator (RO) and store that as heat stress information every unit counting period; and a first cumulative stress counter (SC) configured to accumulate the heat stress information and hold the accumulated value as a first cumulative stress count value, a first synchronization buffer (SB) configured to detect the oscillation frequency of the first ring oscillator (RO) and store that as heat stress information every unit counting period; and a first cumulative stress counter (SC) configured to accumulate the heat stress information and hold the accumulated value as a first cumulative stress count value, wherein the control circuit (CN) is configured to: determine a state of heat stress selected from a first state when the heat stress information exceeds the operation determination threshold value or a second state when the heat stress information falls below the operation determination threshold value, and start transmission of a cumulative heat stress information calculated from the first cumulative stress count value when the state of heat stress transits from the first state to the second state. determine a state of heat stress selected from a first state when the heat stress information exceeds the operation determination threshold value or a second state when the heat stress information falls below the operation determination threshold value, and start transmission of a cumulative heat stress information calculated from the first cumulative stress count value when the state of heat stress transits from the first state to the second state. <EOS>