A light emitting die, comprising: a first semiconductor material having a first surface ; a second semiconductor material having a second surface facing away from the first surface of the first semiconductor material; an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have a stack thickness equal to a distance between the first and second surfaces; a first electrode in contact with the first surface of the first semiconductor material; a second electrode in contact with the second surface of the second semiconductor material, the second electrode being spaced apart from the first electrode by at least the stack thickness, wherein the second electrode includes: a first portion covered by the first semiconductor material, the active region, and the second semiconductor material; a second portion extending laterally from one side of the first portion, the second portion of the second electrode including a plurality of individual sections spaced apart from one another; and the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material; characterized in that the individual sections of the second electrode are exposed through notches in the first semiconductor material, the active region, and the second semiconductor material. a first semiconductor material having a first surface ; a second semiconductor material having a second surface facing away from the first surface of the first semiconductor material; an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have a stack thickness equal to a distance between the first and second surfaces; a first electrode in contact with the first surface of the first semiconductor material; a second electrode in contact with the second surface of the second semiconductor material, the second electrode being spaced apart from the first electrode by at least the stack thickness, wherein the second electrode includes: a first portion covered by the first semiconductor material, the active region, and the second semiconductor material; a second portion extending laterally from one side of the first portion, the second portion of the second electrode including a plurality of individual sections spaced apart from one another; and the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material; characterized in that a first portion covered by the first semiconductor material, the active region, and the second semiconductor material; a second portion extending laterally from one side of the first portion, the second portion of the second electrode including a plurality of individual sections spaced apart from one another; and the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material; characterized in that the individual sections of the second electrode are exposed through notches in the first semiconductor material, the active region, and the second semiconductor material. <EOS>