A gate drive circuit for applying a gate voltage to a gate of a transistor , the gate drive circuit comprising: a gate resistor ; an active gate control circuit , the active gate control circuit configured to apply a first voltage via the gate resistor to the gate of the transistor to turn on the transistor, the first voltage being greater than a threshold voltage for the transistor, the active gate control circuit further configured to apply a second voltage via the gate resistor to the gate of the transistor to turn off the transistor, the second voltage being less than the threshold voltage; wherein: during turn off of the transistor, before applying the second voltage, the active gate control circuit is further configured to apply a third voltage to the gate of the transistor for a first turn off period , the third voltage being less than the first voltage but greater than the second voltage, the active gate control circuit further configured to apply a fourth voltage to the gate of the transistor for a second turn off period , the fourth voltage being less than the third voltage but greater than the second voltage; characterised in that the second turn off period corresponds to a period of time of diode reverse recovery of a diode coupled in parallel with the transistor , and the active gate control circuit receives feedback of the collector current (Ic), collector-emitter voltage (V CE ) and gate-emitter voltage (V GE ) of the transistor . a gate resistor ; an active gate control circuit , the active gate control circuit configured to apply a first voltage via the gate resistor to the gate of the transistor to turn on the transistor, the first voltage being greater than a threshold voltage for the transistor, the active gate control circuit further configured to apply a second voltage via the gate resistor to the gate of the transistor to turn off the transistor, the second voltage being less than the threshold voltage; wherein: during turn off of the transistor, before applying the second voltage, the active gate control circuit is further configured to apply a third voltage to the gate of the transistor for a first turn off period , the third voltage being less than the first voltage but greater than the second voltage, the active gate control circuit further configured to apply a fourth voltage to the gate of the transistor for a second turn off period , the fourth voltage being less than the third voltage but greater than the second voltage; characterised in that the second turn off period corresponds to a period of time of diode reverse recovery of a diode coupled in parallel with the transistor , and the active gate control circuit receives feedback of the collector current (Ic), collector-emitter voltage (V CE ) and gate-emitter voltage (V GE ) of the transistor . during turn off of the transistor, before applying the second voltage, the active gate control circuit is further configured to apply a third voltage to the gate of the transistor for a first turn off period , the third voltage being less than the first voltage but greater than the second voltage, the active gate control circuit further configured to apply a fourth voltage to the gate of the transistor for a second turn off period , the fourth voltage being less than the third voltage but greater than the second voltage; characterised in that the second turn off period corresponds to a period of time of diode reverse recovery of a diode coupled in parallel with the transistor , and the active gate control circuit receives feedback of the collector current (Ic), collector-emitter voltage (V CE ) and gate-emitter voltage (V GE ) of the transistor . <EOS>