Method for separating solid-state layers, in particular solid-state wafers , from a donor substrate , at least comprising the following steps: providing a donor substrate , producing at least one modifications in the interior of the donor substrate by means of at least one LASER beam , wherein the LASER beam penetrates into the donor substrate via a planer surface of the donor substrate , wherein the surface is completely part of the solid-state wafer to be separated, characterized in that the LASER beam is inclined relative to the planer surface of the donor substrate in such a way that it penetrates into the donor substrate at an angle of not equal to 0° or 180° relative to a longitudinal axis of the donor substrate, wherein the LASER beam is focused for the purpose of producing the modification in the donor substrate , wherein a first portion of the LASER beam penetrates into the donor substrate at a first angle with respect to the planer surface of the donor substrate and at least one further portion of the LASER beam penetrates into the donor substrate at a second angle with respect to the planer surface of the donor substrate , wherein the absolute value of the first angle differs from the absolute value of the second angle , wherein the first portion of the LASER beam and the further portion of the LASER beam are focused for the purpose of producing the modification in the donor substrate , wherein the solid-state wafer detaches from the donor substrate as a result of the modifications produced, or a stress-inducing layer is produced or arranged at the planer surface of the donor substrate and mechanical stresses are induced in the donor substrate by means of thermal exposure of the stress-inducing layer , wherein the mechanical stresses give rise to a crack for separating a solid-state layer , which crack propagates along the modifications . providing a donor substrate , producing at least one modifications in the interior of the donor substrate by means of at least one LASER beam , wherein the LASER beam penetrates into the donor substrate via a planer surface of the donor substrate , wherein the surface is completely part of the solid-state wafer to be separated, characterized in that the LASER beam is inclined relative to the planer surface of the donor substrate in such a way that it penetrates into the donor substrate at an angle of not equal to 0° or 180° relative to a longitudinal axis of the donor substrate, wherein the LASER beam is focused for the purpose of producing the modification in the donor substrate , wherein a first portion of the LASER beam penetrates into the donor substrate at a first angle with respect to the planer surface of the donor substrate and at least one further portion of the LASER beam penetrates into the donor substrate at a second angle with respect to the planer surface of the donor substrate , wherein the absolute value of the first angle differs from the absolute value of the second angle , wherein the first portion of the LASER beam and the further portion of the LASER beam are focused for the purpose of producing the modification in the donor substrate , wherein the solid-state wafer detaches from the donor substrate as a result of the modifications produced, or a stress-inducing layer is produced or arranged at the planer surface of the donor substrate and mechanical stresses are induced in the donor substrate by means of thermal exposure of the stress-inducing layer , wherein the mechanical stresses give rise to a crack for separating a solid-state layer , which crack propagates along the modifications . <EOS>