A bidirectional power switch comprising first (100 1 ), second (100 2 ), and third (100 3 ) components, each comprising: a stack of first , second , and third semiconductor regions of alternated conductivity types, the first , the second and the third regions being respectively an upper region, an intermediate region and a lower region of the stack, the intermediate region extending from the upper surface of the lower region to the lower surface of the upper region; and a semiconductor control region having a conductivity type opposite to that of the first region , arranged in the first region and having a surface and a depth lower, respectively, than the surface and the depth of the first region, wherein: the first regions of the first (100 1 ) and second (100 2 ) components have the same conductivity type and the first regions of the first (100 1 ) and third (100 3 ) components have opposite conductivity types; the first region of the first component (100 1 ) is connected to the control regions of the second (100 2 ) and third (100 3 ) components; the first regions of the second (100 2 ) and third (100 3 ) components are connected to a first conduction terminal (A1) of the switch; the third regions of the first (100 1 ), second (100 2 ), and third (100 3 ) components are connected to a second conduction terminal (A2) of the switch; and the control region of the first component (100 1 ) is connected to a control terminal (G) of the switch. a stack of first , second , and third semiconductor regions of alternated conductivity types, the first , the second and the third regions being respectively an upper region, an intermediate region and a lower region of the stack, the intermediate region extending from the upper surface of the lower region to the lower surface of the upper region; and a semiconductor control region having a conductivity type opposite to that of the first region , arranged in the first region and having a surface and a depth lower, respectively, than the surface and the depth of the first region, wherein: the first regions of the first (100 1 ) and second (100 2 ) components have the same conductivity type and the first regions of the first (100 1 ) and third (100 3 ) components have opposite conductivity types; the first region of the first component (100 1 ) is connected to the control regions of the second (100 2 ) and third (100 3 ) components; the first regions of the second (100 2 ) and third (100 3 ) components are connected to a first conduction terminal (A1) of the switch; the third regions of the first (100 1 ), second (100 2 ), and third (100 3 ) components are connected to a second conduction terminal (A2) of the switch; and the control region of the first component (100 1 ) is connected to a control terminal (G) of the switch. the first regions of the first (100 1 ) and second (100 2 ) components have the same conductivity type and the first regions of the first (100 1 ) and third (100 3 ) components have opposite conductivity types; the first region of the first component (100 1 ) is connected to the control regions of the second (100 2 ) and third (100 3 ) components; the first regions of the second (100 2 ) and third (100 3 ) components are connected to a first conduction terminal (A1) of the switch; the third regions of the first (100 1 ), second (100 2 ), and third (100 3 ) components are connected to a second conduction terminal (A2) of the switch; and the control region of the first component (100 1 ) is connected to a control terminal (G) of the switch. <EOS>