A method of depositing of a film on a substrate, comprising in the following order: placing a substrate in a physical vapor deposition (PVD) chamber; depositing metal on the substrate using PVD at a controlled sputtering gas pressure in the chamber; and depositing a film on the metal; wherein: the metal comprises a plurality of layers each deposited at a different pressure comprising a first layer deposited directly on the substrate at the pressure in a range of 50-250 millitorr (mTorr) and a second layer deposited on the first layer at the pressure in a range of 2-50 mTorr; whereby the different pressures at which the first and second metal layers are deposited result in different adhesions allowing: processing of the film and metal into a device comprising a microelectromechanical device structure, an optoelectronic device structure, a circuit, a battery electrode, a fuel cell electrode, or an electrode having an electrochemically active surface while the film and metal is adhered to the substrate; and removing the device undamaged from the substrate by peeling. placing a substrate in a physical vapor deposition (PVD) chamber; depositing metal on the substrate using PVD at a controlled sputtering gas pressure in the chamber; and depositing a film on the metal; wherein: the metal comprises a plurality of layers each deposited at a different pressure comprising a first layer deposited directly on the substrate at the pressure in a range of 50-250 millitorr (mTorr) and a second layer deposited on the first layer at the pressure in a range of 2-50 mTorr; whereby the different pressures at which the first and second metal layers are deposited result in different adhesions allowing: processing of the film and metal into a device comprising a microelectromechanical device structure, an optoelectronic device structure, a circuit, a battery electrode, a fuel cell electrode, or an electrode having an electrochemically active surface while the film and metal is adhered to the substrate; and removing the device undamaged from the substrate by peeling. the metal comprises a plurality of layers each deposited at a different pressure comprising a first layer deposited directly on the substrate at the pressure in a range of 50-250 millitorr (mTorr) and a second layer deposited on the first layer at the pressure in a range of 2-50 mTorr; whereby the different pressures at which the first and second metal layers are deposited result in different adhesions allowing: processing of the film and metal into a device comprising a microelectromechanical device structure, an optoelectronic device structure, a circuit, a battery electrode, a fuel cell electrode, or an electrode having an electrochemically active surface while the film and metal is adhered to the substrate; and removing the device undamaged from the substrate by peeling. processing of the film and metal into a device comprising a microelectromechanical device structure, an optoelectronic device structure, a circuit, a battery electrode, a fuel cell electrode, or an electrode having an electrochemically active surface while the film and metal is adhered to the substrate; and removing the device undamaged from the substrate by peeling. <EOS>