A semiconductor capacitor comprising: a semiconductor substrate, an electrode group formed on the semiconductor substrate, and an insulator; wherein the electrode group comprises a plurality of first unit electrodes embedded in first trenches, a plurality of second unit electrodes embedded in second trenches, and a third unit electrode being the semiconductor substrate, each of the first and the second unit electrodes having an outer shape that is rectangular in a plan view and a structure of trench electrodes, the first unit electrodes and the second unit electrodes being arranged in an alternately adjacent staggered pattern with respect to an XY direction, the X direction being a width direction of the semiconductor capacitor in the plan view, the Y direction being orthogonal to the X direction in the plan view; wherein the insulator comprises first regions and second regions, the first regions being sandwiched between the first trenches and the second trenches, the first regions being the dielectrics of a plurality of first capacitors, the second regions being surrounded by the first trenches and the second trenches; wherein the first unit electrodes and the second unit electrodes are arranged in a lattice pattern in the XY direction with a constant thickness, which is the thickness of the first region of the insulator; wherein a plurality of second capacitors are formed between the plurality of the first unit electrodes and the semiconductor substrate, a plurality of third capacitors are formed between the plurality of the second unit electrodes and the semiconductor substrate; wherein the plurality of the first capacitors function as a capacitor that is connected to power supply lines, and the plurality of the second capacitors and the plurality of the third capacitors function as a capacitor that is connected to a power supply line and a chassis ground; wherein the first capacitors, in relation to the second capacitors and the third capacitors, are set to be different in at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors; wherein contact regions for obtaining electrical conduction with the semiconductor substrate are formed on the same surface of the semiconductor substrate as the surface on which the first and the second unit electrodes are formed, the contact regions being formed in the second regions where the first unit electrodes and the second unit electrodes are not opposing. wherein the electrode group comprises a plurality of first unit electrodes embedded in first trenches, a plurality of second unit electrodes embedded in second trenches, and a third unit electrode being the semiconductor substrate, each of the first and the second unit electrodes having an outer shape that is rectangular in a plan view and a structure of trench electrodes, the first unit electrodes and the second unit electrodes being arranged in an alternately adjacent staggered pattern with respect to an XY direction, the X direction being a width direction of the semiconductor capacitor in the plan view, the Y direction being orthogonal to the X direction in the plan view; wherein the insulator comprises first regions and second regions, the first regions being sandwiched between the first trenches and the second trenches, the first regions being the dielectrics of a plurality of first capacitors, the second regions being surrounded by the first trenches and the second trenches; wherein the first unit electrodes and the second unit electrodes are arranged in a lattice pattern in the XY direction with a constant thickness, which is the thickness of the first region of the insulator; wherein a plurality of second capacitors are formed between the plurality of the first unit electrodes and the semiconductor substrate, a plurality of third capacitors are formed between the plurality of the second unit electrodes and the semiconductor substrate; wherein the plurality of the first capacitors function as a capacitor that is connected to power supply lines, and the plurality of the second capacitors and the plurality of the third capacitors function as a capacitor that is connected to a power supply line and a chassis ground; wherein the first capacitors, in relation to the second capacitors and the third capacitors, are set to be different in at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors; wherein contact regions for obtaining electrical conduction with the semiconductor substrate are formed on the same surface of the semiconductor substrate as the surface on which the first and the second unit electrodes are formed, the contact regions being formed in the second regions where the first unit electrodes and the second unit electrodes are not opposing.