Optoelectronic module comprising at least one first semiconductor body having a radiation exit side, on which at least one electrical connection region (21, 22) is arranged, wherein - the first semiconductor body is arranged by a side situated opposite the radiation exit side on a carrier, - at least one second semiconductor body is arranged alongside the first semiconductor body on the carrier - an insulation material is arranged on the carrier laterally alongside the first semiconductor body and the second semiconductor body, said insulation material in each case forming a channel and adjoining outer side surfaces of the semiconductor body in a positively locking manner, - an insulation layer is arranged at least regionally on the first semiconductor body and the insulation material, - at least one planar conductive structure is arranged on the insulation layer for the planar contacting of the first semiconductor body and is electrically conductively connected to the electrical connection region (21, 22) of the first semiconductor body, - the insulation material in regions between the semiconductor bodies adjoins the semiconductor bodies in a positively locking manner, - the insulation material forms a ramp for the insulation layer, such that the insulation material prevents steep flanks of the insulation layer at the outer side surfaces of the first and second semiconductor bodies, - regions between the semiconductor bodies are planarized by means of the insulation material, such that a height of the insulation material in these regions between the semiconductor bodies corresponds to a height of the respective semiconductor bodies, - a maximum height of the insulation material formed as a channel at the outer side surfaces of the first and second semiconductor bodies corresponds to the height of said semiconductor bodies, and - the insulation material and the insulation layer contain a polymer material. - the first semiconductor body is arranged by a side situated opposite the radiation exit side on a carrier, - at least one second semiconductor body is arranged alongside the first semiconductor body on the carrier - an insulation material is arranged on the carrier laterally alongside the first semiconductor body and the second semiconductor body, said insulation material in each case forming a channel and adjoining outer side surfaces of the semiconductor body in a positively locking manner, - an insulation layer is arranged at least regionally on the first semiconductor body and the insulation material, - at least one planar conductive structure is arranged on the insulation layer for the planar contacting of the first semiconductor body and is electrically conductively connected to the electrical connection region (21, 22) of the first semiconductor body, - the insulation material in regions between the semiconductor bodies adjoins the semiconductor bodies in a positively locking manner, - the insulation material forms a ramp for the insulation layer, such that the insulation material prevents steep flanks of the insulation layer at the outer side surfaces of the first and second semiconductor bodies, - regions between the semiconductor bodies are planarized by means of the insulation material, such that a height of the insulation material in these regions between the semiconductor bodies corresponds to a height of the respective semiconductor bodies, - a maximum height of the insulation material formed as a channel at the outer side surfaces of the first and second semiconductor bodies corresponds to the height of said semiconductor bodies, and - the insulation material and the insulation layer contain a polymer material.