A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a reactor; maintaining the substrate at a temperature of from -20 °C to 100 °C; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group, wherein the at least one silicon-containing compound is selected from the group consisting of: I(a). Acyloxysilanes with a formula of (RCOO) m R 1 n SiH p wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; and m+n+p=4; I(b). Acyloxyalkoxysilanes with a formula of (RCOO) m (R 2 O) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; R 2 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and I(c). Acyloxyaminoxysilanes with a formula of (RCOO) m (R 3 R 4 NO) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; and R 3 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group; R 4 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and providing an in-situ plasma or remote plasma source to the reactor to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature. maintaining the substrate at a temperature of from -20 °C to 100 °C; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group, wherein the at least one silicon-containing compound is selected from the group consisting of: I(a). Acyloxysilanes with a formula of (RCOO) m R 1 n SiH p wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; and m+n+p=4; I(b). Acyloxyalkoxysilanes with a formula of (RCOO) m (R 2 O) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; R 2 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and I(c). Acyloxyaminoxysilanes with a formula of (RCOO) m (R 3 R 4 NO) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; and R 3 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group; R 4 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and I(a). Acyloxysilanes with a formula of (RCOO) m R 1 n SiH p wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; and m+n+p=4; I(b). Acyloxyalkoxysilanes with a formula of (RCOO) m (R 2 O) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; R 2 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and I(c). Acyloxyaminoxysilanes with a formula of (RCOO) m (R 3 R 4 NO) n SiH p R 1 q wherein R is selected from hydrogen, a linear or branched C 1 to C 6 alkyl group; R 1 is selected from a linear or branched C 1 to C 6 alkyl group, a linear or branched C 2 to C 6 alkenyl group, a linear or branched C 2 to C 6 alkynyl group; and R 3 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group; R 4 is selected from a linear or branched C 1 to C 6 alkyl group; m = 2 or 3; n = 1 or 2; p = 0 or 1; q = 0 or 1 and m+n+p+q = 4; and providing an in-situ plasma or remote plasma source to the reactor to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.