A light emitting device comprising: an A1N template layer; a first superlattice layer disposed on the A1N template layer; a second superlattice layer disposed on the first superlattice layer, a first semiconductor layer disposed between the first and second superlattice layers (120a, 120b); a first conductivity type semiconductor layer disposed on the second superlattice layer; an active layer disposed on the first conductivity type semiconductor layer and having a quantum well layer and a quantum wall layer; an electron blocking layer disposed on the active layer; and a second conductive type semiconductor layer (116a, 116b) disposed on the electron blocking layer, wherein the first superlattice layer includes a first layer having an AlN semiconductor and a second layer having an AlGaN-based semiconductor, the first semiconductor layer includes an AlGaN-based semiconductor, the second superlattice layer includes a third layer having an AlGaN-based semiconductor and a fourth layer having an AlGaN-based semiconductor, the first layer and the second layer are disposed alternately in the first superlattice layer, the third layer and the fourth layer are disposed alternately in the second superlattice layer, a composition of aluminum (Al) of each of the first semiconductor layer, the second layer and the third layer is equal to or greater than a composition of gallium (Ga), wherein a difference between the composition of gallium and the composition of aluminum of each of the first semiconductor layer, the second layer and the third layer is 10% or less, the first semiconductor layer has a thickness greater than a thickness of a single pair having the first layer and the second layer of the first superlattice layer, and the active layer is adapted to emit a UVB wavelength of 295 to 315 nm, characterized in that: each of the third and fourth layers (123a,123b), and the first semiconductor layer has an A1 composition ratio Al x and a Ga composition ratio Ga y in a composition formula of an AlGaN-based semiconductor, wherein the composition ratio of the AlGaN-based semiconductor of each of the third and fourth layers (123a,123b), and the first semiconductor layer has a composition ratio relationship of Al x ≥ Ga y, and a difference in the composition ratio of the Al x and the Ga y is 10% or less. an A1N template layer; a first superlattice layer disposed on the A1N template layer; a second superlattice layer disposed on the first superlattice layer, a first semiconductor layer disposed between the first and second superlattice layers (120a, 120b); a first conductivity type semiconductor layer disposed on the second superlattice layer; an active layer disposed on the first conductivity type semiconductor layer and having a quantum well layer and a quantum wall layer; an electron blocking layer disposed on the active layer; and a second conductive type semiconductor layer (116a, 116b) disposed on the electron blocking layer, wherein the first superlattice layer includes a first layer having an AlN semiconductor and a second layer having an AlGaN-based semiconductor, the first semiconductor layer includes an AlGaN-based semiconductor, the second superlattice layer includes a third layer having an AlGaN-based semiconductor and a fourth layer having an AlGaN-based semiconductor, the first layer and the second layer are disposed alternately in the first superlattice layer, the third layer and the fourth layer are disposed alternately in the second superlattice layer, a composition of aluminum (Al) of each of the first semiconductor layer, the second layer and the third layer is equal to or greater than a composition of gallium (Ga), wherein a difference between the composition of gallium and the composition of aluminum of each of the first semiconductor layer, the second layer and the third layer is 10% or less, the first semiconductor layer has a thickness greater than a thickness of a single pair having the first layer and the second layer of the first superlattice layer, and the active layer is adapted to emit a UVB wavelength of 295 to 315 nm, characterized in that: each of the third and fourth layers (123a,123b), and the first semiconductor layer has an A1 composition ratio Al x and a Ga composition ratio Ga y in a composition formula of an AlGaN-based semiconductor, wherein the composition ratio of the AlGaN-based semiconductor of each of the third and fourth layers (123a,123b), and the first semiconductor layer has a composition ratio relationship of Al x ≥ Ga y, and a difference in the composition ratio of the Al x and the Ga y is 10% or less. each of the third and fourth layers (123a,123b), and the first semiconductor layer has an A1 composition ratio Al x and a Ga composition ratio Ga y in a composition formula of an AlGaN-based semiconductor, wherein the composition ratio of the AlGaN-based semiconductor of each of the third and fourth layers (123a,123b), and the first semiconductor layer has a composition ratio relationship of Al x ≥ Ga y, and a difference in the composition ratio of the Al x and the Ga y is 10% or less.