A method of forming a solid state transducer device, comprising: forming a solid state emitter on a semiconductor material formed on an epitaxial substrate, the solid state emitter having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the semiconductor material includes buffer layers; carrying the solid state emitter with a first substrate, the first substrate having a conductive structure contacting the solid state emitter; selectively etching away a portion of the epitaxial substrate and the semiconductor material; and forming an electrostatic discharge device from a remaining portion of the epitaxial substrate and the semiconductor material, characterised in that forming the electrostatic discharge device comprises: forming a via through the electrostatic discharge device and at least a portion of the solid state emitter and coupling the electrostatic discharge device to the solid state emitter using the via; depositing a first conductive material in the via, wherein the first conductive material contacts the conductive structure; and depositing a second conductive material on the solid state emitter and the electrostatic discharge device, wherein the buffer layers include undoped, large-bandgap semiconductor layers and the electrostatic discharge device is electrically isolated from the solid state emitter by the buffer layers. forming a solid state emitter on a semiconductor material formed on an epitaxial substrate, the solid state emitter having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, wherein the semiconductor material includes buffer layers; carrying the solid state emitter with a first substrate, the first substrate having a conductive structure contacting the solid state emitter; selectively etching away a portion of the epitaxial substrate and the semiconductor material; and forming an electrostatic discharge device from a remaining portion of the epitaxial substrate and the semiconductor material, characterised in that forming the electrostatic discharge device comprises: forming a via through the electrostatic discharge device and at least a portion of the solid state emitter and coupling the electrostatic discharge device to the solid state emitter using the via; depositing a first conductive material in the via, wherein the first conductive material contacts the conductive structure; and depositing a second conductive material on the solid state emitter and the electrostatic discharge device, wherein the buffer layers include undoped, large-bandgap semiconductor layers and the electrostatic discharge device is electrically isolated from the solid state emitter by the buffer layers. forming a via through the electrostatic discharge device and at least a portion of the solid state emitter and coupling the electrostatic discharge device to the solid state emitter using the via; depositing a first conductive material in the via, wherein the first conductive material contacts the conductive structure; and depositing a second conductive material on the solid state emitter and the electrostatic discharge device, wherein the buffer layers include undoped, large-bandgap semiconductor layers and the electrostatic discharge device is electrically isolated from the solid state emitter by the buffer layers.