An apparatus, comprising: a substrate, having a pixel sensor region and a pixel display region disposed beside the pixel sensor region; and at least one pixel structure (100, 200), disposed on the substrate and comprising: a pixel defining layer, disposed on the substrate, wherein the pixel defining layer has a device accommodation portion, and the device accommodation portion is located in the pixel display region; a micro light-emitting diode, disposed on the device accommodation portion, wherein an area of the light-emitting diode is smaller than an area of the device accommodation portion; a pixel driving circuit, disposed on the substrate and electrically connected to the light-emitting diode, wherein the pixel driving circuit comprises a pixel electrode (132, 232), the pixel electrode (132, 232) covers the device accommodation portion and the light-emitting diode is bonded onto the pixel electrode (132, 232); a sensor device adapted to sense light, disposed between the pixel defining layer and the substrate, and the sensor device located in the pixel sensor region; a protective layer, covering the pixel electrode (132, 232) and the device accommodation portion and surrounding the light-emitting diode; and a counter electrode, electrically connected to the light-emitting diode, wherein the counter electrode is connected to the top of the light-emitting diode and the pixel electrode (132, 232) is connected to the bottom side of the light-emitting diode, the counter electrode and the pixel electrode (132, 232) being isolated from each other by the protective layer, characterized in that: the sensor device comprises a first conductive layer, a silicon-rich material layer and a second conductive layer that are stacked in sequence from bottom to top, wherein the pixel electrode (132, 232) and the second conductive layer of the sensor device are a same film layer. a substrate, having a pixel sensor region and a pixel display region disposed beside the pixel sensor region; and at least one pixel structure (100, 200), disposed on the substrate and comprising: a pixel defining layer, disposed on the substrate, wherein the pixel defining layer has a device accommodation portion, and the device accommodation portion is located in the pixel display region; a micro light-emitting diode, disposed on the device accommodation portion, wherein an area of the light-emitting diode is smaller than an area of the device accommodation portion; a pixel driving circuit, disposed on the substrate and electrically connected to the light-emitting diode, wherein the pixel driving circuit comprises a pixel electrode (132, 232), the pixel electrode (132, 232) covers the device accommodation portion and the light-emitting diode is bonded onto the pixel electrode (132, 232); a sensor device adapted to sense light, disposed between the pixel defining layer and the substrate, and the sensor device located in the pixel sensor region; a protective layer, covering the pixel electrode (132, 232) and the device accommodation portion and surrounding the light-emitting diode; and a counter electrode, electrically connected to the light-emitting diode, wherein the counter electrode is connected to the top of the light-emitting diode and the pixel electrode (132, 232) is connected to the bottom side of the light-emitting diode, a pixel defining layer, disposed on the substrate, wherein the pixel defining layer has a device accommodation portion, and the device accommodation portion is located in the pixel display region; a micro light-emitting diode, disposed on the device accommodation portion, wherein an area of the light-emitting diode is smaller than an area of the device accommodation portion; a pixel driving circuit, disposed on the substrate and electrically connected to the light-emitting diode, wherein the pixel driving circuit comprises a pixel electrode (132, 232), the pixel electrode (132, 232) covers the device accommodation portion and the light-emitting diode is bonded onto the pixel electrode (132, 232); a sensor device adapted to sense light, disposed between the pixel defining layer and the substrate, and the sensor device located in the pixel sensor region; a protective layer, covering the pixel electrode (132, 232) and the device accommodation portion and surrounding the light-emitting diode; and a counter electrode, electrically connected to the light-emitting diode, wherein the counter electrode is connected to the top of the light-emitting diode and the pixel electrode (132, 232) is connected to the bottom side of the light-emitting diode, the counter electrode and the pixel electrode (132, 232) being isolated from each other by the protective layer, characterized in that: the sensor device comprises a first conductive layer, a silicon-rich material layer and a second conductive layer that are stacked in sequence from bottom to top, wherein the pixel electrode (132, 232) and the second conductive layer of the sensor device are a same film layer.