A method for determining spatial distribution of defects in a semiconductor material sample and electrically connected to at least two terminals, the method including: - applying a voltage between the two terminals, - acquiring by a camera an image of light emitted by electroluminescence by the sample, - repeating the image acquisition by varying the voltage between the two terminals, - measuring a light intensity emitted by electroluminescence in zones of the images acquired as a function of said voltage applied between the two terminals, the method being characterised in that it further includes: - determining a model of variation in light intensity emitted by electroluminescence as a function of said voltage applied, by assimilation to the variation in a current generated in the sample as a function of the voltage applied, said model using at least one parameter (Rs*) characterising a presence of defects in the material, - applying the model to the measurements of light intensity and identifying zones of the sample in which the parameter (Rs*) varies, and - deducing a mapping of defects in the sample from the variations in the parameter (Rs*), and characterised in that said model is given by an equation of the type: EL V x y = I 0 ∗ x y. exp V − R s ∗ x y. EL V x y n x y. kT where: EL ( V, x, y) is the light intensity emitted by electroluminescence measured at a point of coordinates x and y of an image acquired with application of voltage V between the two terminals, k is the Boltzmann's constant, T is an ambient temperature, q is the charge of one electron, I 0 * x y is a constant in relation to V, representative of a dark current of the sample at said coordinates x, y, n(x, y) is an ideality factor, and R s * x y is a quantity representative of a parasitic series resistance in the material of the sample, and corresponds to said parameter characterising a presence of defects in the material. - applying a voltage between the two terminals, - acquiring by a camera an image of light emitted by electroluminescence by the sample, - repeating the image acquisition by varying the voltage between the two terminals, - measuring a light intensity emitted by electroluminescence in zones of the images acquired as a function of said voltage applied between the two terminals, the method being characterised in that it further includes: - determining a model of variation in light intensity emitted by electroluminescence as a function of said voltage applied, by assimilation to the variation in a current generated in the sample as a function of the voltage applied, said model using at least one parameter (Rs*) characterising a presence of defects in the material, - applying the model to the measurements of light intensity and identifying zones of the sample in which the parameter (Rs*) varies, and - deducing a mapping of defects in the sample from the variations in the parameter (Rs*), - determining a model of variation in light intensity emitted by electroluminescence as a function of said voltage applied, by assimilation to the variation in a current generated in the sample as a function of the voltage applied, said model using at least one parameter (Rs*) characterising a presence of defects in the material, - applying the model to the measurements of light intensity and identifying zones of the sample in which the parameter (Rs*) varies, and - deducing a mapping of defects in the sample from the variations in the parameter (Rs*), and characterised in that said model is given by an equation of the type: EL V x y = I 0 ∗ x y. exp V − R s ∗ x y. EL V x y n x y. kT where: EL ( V, x, y) is the light intensity emitted by electroluminescence measured at a point of coordinates x and y of an image acquired with application of voltage V between the two terminals, k is the Boltzmann's constant, T is an ambient temperature, q is the charge of one electron, I 0 * x y is a constant in relation to V, representative of a dark current of the sample at said coordinates x, y, n(x, y) is an ideality factor, and R s * x y is a quantity representative of a parasitic series resistance in the material of the sample, and corresponds to said parameter characterising a presence of defects in the material. EL ( V, x, y) is the light intensity emitted by electroluminescence measured at a point of coordinates x and y of an image acquired with application of voltage V between the two terminals, k is the Boltzmann's constant, T is an ambient temperature, q is the charge of one electron, I 0 * x y is a constant in relation to V, representative of a dark current of the sample at said coordinates x, y, n(x, y) is an ideality factor, and R s * x y is a quantity representative of a parasitic series resistance in the material of the sample, and corresponds to said parameter characterising a presence of defects in the material.