A light emitting device comprising: a semiconductor structure including an active region, wherein the active region comprises a light emitting heterostructure including: a plurality of barriers (32; 432C) alternating with a plurality of quantum wells (30; 430C), wherein at least one of: a barrier in the plurality of barriers (32; 432C) or a quantum well in the plurality of quantum wells (30; 430C), includes a plurality of regions including: a fine structure region located only on an outer portion of the at least one of: the barrier or the quantum well adjacent to a barrier-quantum well heterojunction, wherein the fine structure region includes a plurality of subscale features arranged in a growth direction, wherein the plurality of subscale features includes a plurality of subscale barriers alternating with a plurality of subscale quantum wells, characterized by that the plurality of subscale barriers include subscale barriers of a plurality of differing heights that decrease toward a quantum well side of the heterojunction; and a second fine structure region located only in a second outer portion of the at least one of: the barrier or the quantum well. a semiconductor structure including an active region, wherein the active region comprises a light emitting heterostructure including: a plurality of barriers (32; 432C) alternating with a plurality of quantum wells (30; 430C), wherein at least one of: a barrier in the plurality of barriers (32; 432C) or a quantum well in the plurality of quantum wells (30; 430C), includes a plurality of regions including: a fine structure region located only on an outer portion of the at least one of: the barrier or the quantum well adjacent to a barrier-quantum well heterojunction, wherein the fine structure region includes a plurality of subscale features arranged in a growth direction, wherein the plurality of subscale features includes a plurality of subscale barriers alternating with a plurality of subscale quantum wells, characterized by that the plurality of subscale barriers include subscale barriers of a plurality of differing heights that decrease toward a quantum well side of the heterojunction; and a second fine structure region located only in a second outer portion of the at least one of: the barrier or the quantum well. a plurality of barriers (32; 432C) alternating with a plurality of quantum wells (30; 430C), wherein at least one of: a barrier in the plurality of barriers (32; 432C) or a quantum well in the plurality of quantum wells (30; 430C), includes a plurality of regions including: a fine structure region located only on an outer portion of the at least one of: the barrier or the quantum well adjacent to a barrier-quantum well heterojunction, wherein the fine structure region includes a plurality of subscale features arranged in a growth direction, wherein the plurality of subscale features includes a plurality of subscale barriers alternating with a plurality of subscale quantum wells, characterized by that the plurality of subscale barriers include subscale barriers of a plurality of differing heights that decrease toward a quantum well side of the heterojunction; and a second fine structure region located only in a second outer portion of the at least one of: the barrier or the quantum well. a fine structure region located only on an outer portion of the at least one of: the barrier or the quantum well adjacent to a barrier-quantum well heterojunction, wherein the fine structure region includes a plurality of subscale features arranged in a growth direction, wherein the plurality of subscale features includes a plurality of subscale barriers alternating with a plurality of subscale quantum wells, characterized by that the plurality of subscale barriers include subscale barriers of a plurality of differing heights that decrease toward a quantum well side of the heterojunction; and a second fine structure region located only in a second outer portion of the at least one of: the barrier or the quantum well.