A semiconductor module comprising: an insulating substrate; a first element bonding conductor layer and a second element bonding conductor layer formed on the surface of the insulating substrate and arranged side by side in a predetermined first direction; a plurality of first semiconductor devices respectively bonded to the first element bonding conductor layer; and a plurality of second semiconductor devices respectively bonded to the second element bonding conductor layer, and a plurality of first wires by which the first semiconductor devices bonded to the first element bonding conductor layer and the second element bonding conductor layer are connected together; and wherein the first element bonding conductor layer has a first part of the first element bonding conductor layer formed in a rectangular shape elongated in the first direction, and the second element bonding conductor layer has a first part (63 a) of the second element bonding conductor layer formed in a rectangular shape elongated in the first direction, and a second part (63e) of the second element bonding conductor layer disposed along one long side of the first part of the first element bonding conductor layer and to which the plurality of first wires are connected, characterized in that the semiconductor module further comprising: a terminal electrically connected to the first element bonding conductor layer; a second terminal electrically connected to the second semiconductor devices; an output terminal electrically connected to the second element bonding conductor layer; a first control terminal for controlling the first semiconductor device; and a second control terminal for controlling the second semiconductor device; wherein the first terminal and the second terminal are disposed on the opposite side of the second element bonding conductor layer with respect to the first element bonding conductor layer, the output terminal is disposed on the opposite side of the first element bonding conductor layer with respect to the second element bonding conductor layer, the first terminal and the second terminal are disposed at an interval in a second direction orthogonal to the first direction when viewed planarly, and the first control terminal and the second control terminal are disposed between the first terminal and the output terminal. an insulating substrate; a first element bonding conductor layer and a second element bonding conductor layer formed on the surface of the insulating substrate and arranged side by side in a predetermined first direction; a plurality of first semiconductor devices respectively bonded to the first element bonding conductor layer; and a plurality of second semiconductor devices respectively bonded to the second element bonding conductor layer, and a plurality of first wires by which the first semiconductor devices bonded to the first element bonding conductor layer and the second element bonding conductor layer are connected together; and wherein the first element bonding conductor layer has a first part of the first element bonding conductor layer formed in a rectangular shape elongated in the first direction, and the second element bonding conductor layer has a first part (63 a) of the second element bonding conductor layer formed in a rectangular shape elongated in the first direction, and a second part (63e) of the second element bonding conductor layer disposed along one long side of the first part of the first element bonding conductor layer and to which the plurality of first wires are connected, the semiconductor module further comprising: a terminal electrically connected to the first element bonding conductor layer; a second terminal electrically connected to the second semiconductor devices; an output terminal electrically connected to the second element bonding conductor layer; a first control terminal for controlling the first semiconductor device; and a second control terminal for controlling the second semiconductor device; wherein the first terminal and the second terminal are disposed on the opposite side of the second element bonding conductor layer with respect to the first element bonding conductor layer, the output terminal is disposed on the opposite side of the first element bonding conductor layer with respect to the second element bonding conductor layer, the first terminal and the second terminal are disposed at an interval in a second direction orthogonal to the first direction when viewed planarly, and a terminal electrically connected to the first element bonding conductor layer; a second terminal electrically connected to the second semiconductor devices; an output terminal electrically connected to the second element bonding conductor layer; a first control terminal for controlling the first semiconductor device; and a second control terminal for controlling the second semiconductor device; wherein the first terminal and the second terminal are disposed on the opposite side of the second element bonding conductor layer with respect to the first element bonding conductor layer, the output terminal is disposed on the opposite side of the first element bonding conductor layer with respect to the second element bonding conductor layer, the first terminal and the second terminal are disposed at an interval in a second direction orthogonal to the first direction when viewed planarly, and the first control terminal and the second control terminal are disposed between the first terminal and the output terminal.