An in-cell touch panel (200, 300, 400, 500), comprising: (a) a plurality of pixels spatially arranged in a matrix; (b) a plurality of scanning lines, each scanning line electrically coupled to a corresponding pixel row of the pixel matrix; (c) at least one touch sensing device (210, 310, 410, 510) electrically coupled between two neighboring scanning lines and associated with a pixel therebetween, wherein the at least one touch sensing device is configured for generating a first sensing signal and a second sensing signal; and (d) at least one reverse amplification circuit (220, 320, 420, 520) comprising: (i) a first thin-film transistor having a source, a gate electrically coupled to the at least one touch sensing device, and a drain configured to receive a first bias voltage, Vdh; (ii) a second TFT having a gate electrically coupled to the at least one touch sensing device, a source configured to receive a second bias voltage, Vdl, and a drain electrically coupled to the source of the first TFT; (iii) an amplification TFT (Mamp) having a source, a gate electrically coupled to both the source of the first TFT and the drain of the second TFT, and a drain configured to receive a power supply voltage, VDD; and (iv) a selection TFT (Msel) having a gate electrically coupled to one of the two neighboring scanning lines (G n+1), a source electrically coupled to a signal readout line and a drain electrically coupled to the source of the amplification TFT (Mamp), wherein the at least one touch sensing device is configured for outputting the first sensing signal and the second sensing signal to the gates of the first TFT and the second TFT, respectively, such that when a touch occurs, a gate voltage level of one of the first TFT and the second TFT is increased and a gate voltage level of the other is decreased according to the first sensing signal and the second sensing signal, respectively, and wherein Vdh > Vdl. (a) a plurality of pixels spatially arranged in a matrix; (b) a plurality of scanning lines, each scanning line electrically coupled to a corresponding pixel row of the pixel matrix; (c) at least one touch sensing device (210, 310, 410, 510) electrically coupled between two neighboring scanning lines and associated with a pixel therebetween, wherein the at least one touch sensing device is configured for generating a first sensing signal and a second sensing signal; and (d) at least one reverse amplification circuit (220, 320, 420, 520) comprising: (i) a first thin-film transistor having a source, a gate electrically coupled to the at least one touch sensing device, and a drain configured to receive a first bias voltage, Vdh; (ii) a second TFT having a gate electrically coupled to the at least one touch sensing device, a source configured to receive a second bias voltage, Vdl, and a drain electrically coupled to the source of the first TFT; (iii) an amplification TFT (Mamp) having a source, a gate electrically coupled to both the source of the first TFT and the drain of the second TFT, and a drain configured to receive a power supply voltage, VDD; and (iv) a selection TFT (Msel) having a gate electrically coupled to one of the two neighboring scanning lines (G n+1), a source electrically coupled to a signal readout line and a drain electrically coupled to the source of the amplification TFT (Mamp), wherein the at least one touch sensing device is configured for outputting the first sensing signal and the second sensing signal to the gates of the first TFT and the second TFT, respectively, such that when a touch occurs, a gate voltage level of one of the first TFT and the second TFT is increased and a gate voltage level of the other is decreased according to the first sensing signal and the second sensing signal, respectively, and wherein Vdh > Vdl. (i) a first thin-film transistor having a source, a gate electrically coupled to the at least one touch sensing device, and a drain configured to receive a first bias voltage, Vdh; (ii) a second TFT having a gate electrically coupled to the at least one touch sensing device, a source configured to receive a second bias voltage, Vdl, and a drain electrically coupled to the source of the first TFT; (iii) an amplification TFT (Mamp) having a source, a gate electrically coupled to both the source of the first TFT and the drain of the second TFT, and a drain configured to receive a power supply voltage, VDD; and (iv) a selection TFT (Msel) having a gate electrically coupled to one of the two neighboring scanning lines (G n+1), a source electrically coupled to a signal readout line and a drain electrically coupled to the source of the amplification TFT (Mamp),