An integrated circuit comprising: a first global voltage node and a second global voltage node; two or more power domains (21, 22) each coupled to the first global voltage node, wherein each of the two or more power domains includes: a local voltage node; a functional unit coupled between the first global voltage node and its respective local voltage node; a first transistor coupled between the local voltage node and the second global voltage node; and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the first transistor responsive to detecting the ESD event, and further configured to provide power to the functional unit of its respective one of the of power domains by activating the first transistor responsive to receiving a first indication from a power control unit of the integrated circuit; wherein each of the plurality of power domains includes one or more decoupling capacitors coupled between the first global voltage node and its respective local voltage node; wherein, in absence of an ESD event, the first transistor is configured to be inactive responsive to the ESD circuit receiving a second indication from the power control unit, and wherein the power control unit is further configured to control powering on and off of the plurality of power domains independently of one another, wherein powering on a particular one of the plurality of power domains comprises providing the first indication to the ESD circuit of that one of the plurality of power domains, and wherein removing power from the particular one of the plurality of power domains comprises providing a second indication to the ESD circuit of that one of the plurality of power domain. a first global voltage node and a second global voltage node; two or more power domains (21, 22) each coupled to the first global voltage node, wherein each of the two or more power domains includes: a local voltage node; a functional unit coupled between the first global voltage node and its respective local voltage node; a first transistor coupled between the local voltage node and the second global voltage node; and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the first transistor responsive to detecting the ESD event, and further configured to provide power to the functional unit of its respective one of the of power domains by activating the first transistor responsive to receiving a first indication from a power control unit of the integrated circuit; wherein each of the plurality of power domains includes one or more decoupling capacitors coupled between the first global voltage node and its respective local voltage node; wherein, in absence of an ESD event, the first transistor is configured to be inactive responsive to the ESD circuit receiving a second indication from the power control unit, and wherein the power control unit is further configured to control powering on and off of the plurality of power domains independently of one another, wherein powering on a particular one of the plurality of power domains comprises providing the first indication to the ESD circuit of that one of the plurality of power domains, and wherein removing power from the particular one of the plurality of power domains comprises providing a second indication to the ESD circuit of that one of the plurality of power domain. a local voltage node; a functional unit coupled between the first global voltage node and its respective local voltage node; a first transistor coupled between the local voltage node and the second global voltage node; and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the first transistor responsive to detecting the ESD event, and further configured to provide power to the functional unit of its respective one of the of power domains by activating the first transistor responsive to receiving a first indication from a power control unit of the integrated circuit; wherein each of the plurality of power domains includes one or more decoupling capacitors coupled between the first global voltage node and its respective local voltage node; wherein, in absence of an ESD event, the first transistor is configured to be inactive responsive to the ESD circuit receiving a second indication from the power control unit, and wherein the power control unit is further configured to control powering on and off of the plurality of power domains independently of one another, wherein powering on a particular one of the plurality of power domains comprises providing the first indication to the ESD circuit of that one of the plurality of power domains, and wherein removing power from the particular one of the plurality of power domains comprises providing a second indication to the ESD circuit of that one of the plurality of power domain.