A light emitting device comprising: a light emitting structure divided into a plurality of light emitting cells (P1∼Pn) and a boundary region, the plurality of the light emitting cells (P1∼Pn) comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells (P1∼Pn); a first conductive layers (101-1∼ 101-n) disposed under the light emitting cells (P1∼Pn); and a plurality of second conductive layers(180-1 ∼ 180-j) corresponding to the first conductive layers(101-2 ∼ 101-n) and disposed under the first conductive layers(101-2 ∼ 101-n), characterized by further comprising: a first insulation layer disposed between each of the first conductive layers (101-1 ∼ 101-n), and between the first conductive layers (101-1 ∼ 101-n) and the plurality of second conductive layer (180-1 ∼ 180-j); a protection layer disposed on the boundary region, wherein the boundary region is a region located between each of the two neighboring light emitting cells or the boundary region is a region located around each of the light emitting cells; and a connecting electrode (122-1 ∼ 122-m) connecting the first electrode on one light emitting cell with one of the plurality of second conductive layers (180-1 ∼ 180-j) under another light emitting cell, wherein the plurality of second conductive layers (180-1 ∼ 180-j) are spaced away from the first conductive layers, and disposed under the first insulation layer, wherein each of the plurality of second conductive layers (180-1 ∼ 180-j) is connected with the corresponding one of the first conductive layers (101-1 ∼ 101-n) passing through the first insulation layer, and wherein the connecting electrode (122-1 ∼ 122-m) passes through the protection layer and the first insulation layer. a light emitting structure divided into a plurality of light emitting cells (P1∼Pn) and a boundary region, the plurality of the light emitting cells (P1∼Pn) comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells (P1∼Pn); a first conductive layers (101-1∼ 101-n) disposed under the light emitting cells (P1∼Pn); and a plurality of second conductive layers(180-1 ∼ 180-j) corresponding to the first conductive layers(101-2 ∼ 101-n) and disposed under the first conductive layers(101-2 ∼ 101-n), characterized by further comprising: a first insulation layer disposed between each of the first conductive layers (101-1 ∼ 101-n), and between the first conductive layers (101-1 ∼ 101-n) and the plurality of second conductive layer (180-1 ∼ 180-j); a protection layer disposed on the boundary region, wherein the boundary region is a region located between each of the two neighboring light emitting cells or the boundary region is a region located around each of the light emitting cells; and a connecting electrode (122-1 ∼ 122-m) connecting the first electrode on one light emitting cell with one of the plurality of second conductive layers (180-1 ∼ 180-j) under another light emitting cell, wherein the plurality of second conductive layers (180-1 ∼ 180-j) are spaced away from the first conductive layers, and disposed under the first insulation layer, wherein each of the plurality of second conductive layers (180-1 ∼ 180-j) is connected with the corresponding one of the first conductive layers (101-1 ∼ 101-n) passing through the first insulation layer, and wherein the connecting electrode (122-1 ∼ 122-m) passes through the protection layer and the first insulation layer.