An electronic apparatus, comprising: - an electronic device comprising: - a gate electrode structure (G, BE); - a dielectric structure arranged over said gate electrode structure (G, BE); and - a charge sensing structure comprising at least one 2-dimensional charge sensing layer configured to sense electrical charges induced by an external physical quantity, and that is configured and arranged over said dielectric structure to provide a gate capacitance (C g) between the charge sensing structure and the gate electrode structure (G, BE), characterized in that said charge sensing structure shows a quantum capacitance (C q) in series with said gate capacitance (C g) resulting in a total capacitance (C tot) between the charge sensing structure and the gate electrode structure (G, BE); - a voltage detector electrically connected to the charge sensing structure and the gate electrode structure (G, BE), to detect an output voltage (V o) stored in said total capacitance (C tot) and that is representative of said sensed electrical charges; wherein the electronic apparatus further comprises an input terminal (TV g) electrically connected to said gate electrode structure (G, BE) and that is accessible to apply thereto a gate voltage (V g) selected to, both: - make the electronic device operate around the charge neutrality point (cnp); and - tune the quantum capacitance (C q) to modify the sensitivity and dynamic range of the electronic device. - an electronic device comprising: - a gate electrode structure (G, BE); - a dielectric structure arranged over said gate electrode structure (G, BE); and - a charge sensing structure comprising at least one 2-dimensional charge sensing layer configured to sense electrical charges induced by an external physical quantity, and that is configured and arranged over said dielectric structure to provide a gate capacitance (C g) between the charge sensing structure and the gate electrode structure (G, BE), characterized in that said charge sensing structure shows a quantum capacitance (C q) in series with said gate capacitance (C g) resulting in a total capacitance (C tot) between the charge sensing structure and the gate electrode structure (G, BE); - a voltage detector electrically connected to the charge sensing structure and the gate electrode structure (G, BE), to detect an output voltage (V o) stored in said total capacitance (C tot) and that is representative of said sensed electrical charges; wherein the electronic apparatus further comprises an input terminal (TV g) electrically connected to said gate electrode structure (G, BE) and that is accessible to apply thereto a gate voltage (V g) selected to, both: - a gate electrode structure (G, BE); - a dielectric structure arranged over said gate electrode structure (G, BE); and - a charge sensing structure comprising at least one 2-dimensional charge sensing layer configured to sense electrical charges induced by an external physical quantity, and that is configured and arranged over said dielectric structure to provide a gate capacitance (C g) between the charge sensing structure and the gate electrode structure (G, BE), characterized in that said charge sensing structure shows a quantum capacitance (C q) in series with said gate capacitance (C g) resulting in a total capacitance (C tot) between the charge sensing structure and the gate electrode structure (G, BE); - a voltage detector electrically connected to the charge sensing structure and the gate electrode structure (G, BE), to detect an output voltage (V o) stored in said total capacitance (C tot) and that is representative of said sensed electrical charges; wherein the electronic apparatus further comprises an input terminal (TV g) electrically connected to said gate electrode structure (G, BE) and that is accessible to apply thereto a gate voltage (V g) selected to, both: - make the electronic device operate around the charge neutrality point (cnp); and - tune the quantum capacitance (C q) to modify the sensitivity and dynamic range of the electronic device.