mhurhangee/ep-ind-claims huggingface dataset:
Method for the recovery of constituents of spent lithium cells, with the steps: - prepare unprotected lithium cells; - deep discharge the unprotected lithium cells; - mechanically comminute the deep discharged lithium cells in a low-oxygen atmosphere, wherein a first portion of lithium compounds reacts; - incorporate the comminuted deep discharged lithium cells into a protic liquid, wherein the second, remaining portion of lithium compounds reacts and hydrogen is formed; - remove the reacted lithium compounds, characterised in that the low-oxygen atmosphere is produced by means of an oxygen pump, and the oxygen pump is operated at least in part by the energy obtained from the deep discharging. - prepare unprotected lithium cells; - deep discharge the unprotected lithium cells; - mechanically comminute the deep discharged lithium cells in a low-oxygen atmosphere, wherein a first portion of lithium compounds reacts; - incorporate the comminuted deep discharged lithium cells into a protic liquid, wherein the second, remaining portion of lithium compounds reacts and hydrogen is formed; - remove the reacted lithium compounds, characterised in that the low-oxygen atmosphere is produced by means of an oxygen pump, and the oxygen pump is operated at least in part by the energy obtained from the deep discharging.
An electronic device, comprising: a housing having an interior, wherein the housing includes a glass layer with a surface in the interior; electrical components in the interior; a layer of inorganic material having an outer surface facing away from the interior and an opposing inner surface facing the interior; and a buffer layer having first and second opposing surfaces, wherein the first surface of the buffer layer is in direct contact with the outer surface of the layer of inorganic material, wherein the second surface is in direct contact with the surface of the glass layer, wherein the buffer layer comprises a polymer with embedded particles, and wherein the electronic device further comprises a plurality of layers of ink on the inner surface of the layer of inorganic material. a housing having an interior, wherein the housing includes a glass layer with a surface in the interior; electrical components in the interior; a layer of inorganic material having an outer surface facing away from the interior and an opposing inner surface facing the interior; and a buffer layer having first and second opposing surfaces, wherein the first surface of the buffer layer is in direct contact with the outer surface of the layer of inorganic material, wherein the second surface is in direct contact with the surface of the glass layer, wherein the buffer layer comprises a polymer with embedded particles, and wherein the electronic device further comprises a plurality of layers of ink on the inner surface of the layer of inorganic material.
An electronic device comprising: a communication module; and a processor configured to: receive, through the communication module, key information of an external electronic device from the external electronic device collecting and processing at least one item of user data of the electronic device, generate temporary identification information based on the received key information of the external electronic device and key information of the electronic device, transmit the generated temporary identification information to the external electronic device through the communication module, wherein the generated temporary identification information is transmitted from the external electronic device to a server with the processed at least one item, and receive, in response to transmitting a request signal for transmitting the processed item of the user data to the server with the generated temporary identification information, the at least one item of the user data corresponding to the generated temporary identification information from the server. a communication module; and a processor configured to: receive, through the communication module, key information of an external electronic device from the external electronic device collecting and processing at least one item of user data of the electronic device, generate temporary identification information based on the received key information of the external electronic device and key information of the electronic device, transmit the generated temporary identification information to the external electronic device through the communication module, wherein the generated temporary identification information is transmitted from the external electronic device to a server with the processed at least one item, and receive, in response to transmitting a request signal for transmitting the processed item of the user data to the server with the generated temporary identification information, the at least one item of the user data corresponding to the generated temporary identification information from the server. receive, through the communication module, key information of an external electronic device from the external electronic device collecting and processing at least one item of user data of the electronic device, generate temporary identification information based on the received key information of the external electronic device and key information of the electronic device, transmit the generated temporary identification information to the external electronic device through the communication module, wherein the generated temporary identification information is transmitted from the external electronic device to a server with the processed at least one item, and receive, in response to transmitting a request signal for transmitting the processed item of the user data to the server with the generated temporary identification information, the at least one item of the user data corresponding to the generated temporary identification information from the server.
Method for producing an MOS transistor comprising a gate structure including a buried cavity, wherein, in said method, a) a first semiconductor substrate having a top side is provided, b) a recess is formed in the top side of the first semiconductor substrate, c) a second semiconductor substrate having crystal lattice planes and a top side is provided, said top side extending substantially parallel to the crystal lattice planes, d) one of the crystal lattice planes that is arranged at a desired distance from the top side of the second semiconductor substrate, is weakened by ion implantation for generating a predetermined weakening plane, e) the second semiconductor substrate is by its top side bonded under vacuum conditions to the top side of the first semiconductor substrate, wherein, for forming a buried cavity, the second semiconductor substrate is made to cover the recess in the top side of the first semiconductor substrate, and f) the second semiconductor substrate is split along the predetermined weakening plane for leaving a membrane layer on the top side of the first semiconductor substrate, wherein - the semiconductor structure from the first semiconductor substrate bonded to the membrane layer serves for generating the MOS transistor, - the buried cavity forms a gate dielectric, and - in the first semiconductor substrate below the buried cavity, a channel region is formed and, adjacent to the buried cavity at on least two sides thereof, a drain and a source region (14,16) of the MOS transistor are formed and, above the buried cavity, a gate electrode is formed in the membrane layer. a) a first semiconductor substrate having a top side is provided, b) a recess is formed in the top side of the first semiconductor substrate, c) a second semiconductor substrate having crystal lattice planes and a top side is provided, said top side extending substantially parallel to the crystal lattice planes, d) one of the crystal lattice planes that is arranged at a desired distance from the top side of the second semiconductor substrate, is weakened by ion implantation for generating a predetermined weakening plane, e) the second semiconductor substrate is by its top side bonded under vacuum conditions to the top side of the first semiconductor substrate, wherein, for forming a buried cavity, the second semiconductor substrate is made to cover the recess in the top side of the first semiconductor substrate, and f) the second semiconductor substrate is split along the predetermined weakening plane for leaving a membrane layer on the top side of the first semiconductor substrate, - the semiconductor structure from the first semiconductor substrate bonded to the membrane layer serves for generating the MOS transistor, - the buried cavity forms a gate dielectric, and - in the first semiconductor substrate below the buried cavity, a channel region is formed and, adjacent to the buried cavity at on least two sides thereof, a drain and a source region (14,16) of the MOS transistor are formed and, above the buried cavity, a gate electrode is formed in the membrane layer.
Disposable incontinence article in the form of underpants, the article comprising a longitudinal central axis and a transverse central axis for absorbing bodily excretions for preferred use by men, the article comprising a front abdominal portion and a rear back portion spaced apart from one another in a longitudinal direction, which portions are connected to one another by the manufacturer at side seam regions on both sides to form a continuous abdominal and back band in the transverse or hip circumferential direction, which band comprises a hip opening which is closed in the hip circumferential direction, and the article comprising a crotch portion which has an absorption body and extends in a longitudinal direction between the abdominal portion and the back portion and is non-detachably attached to the abdominal portion and the back portion in a relevant overlapping region (36, 38), wherein the crotch portion, the abdominal portion and the back portion jointly delimit leg openings of the incontinence article and wherein the crotch portion has cuff elements on both sides which form a lateral leakage barrier and run on both sides along a longitudinal extension of the absorption body, which cuff elements are fixed at least along a cuff base line on a side of the incontinence article facing the body and have an unfixed, free longitudinal edge which is elasticated at least partially in the longitudinal direction, with which edge the cuff elements can be raised from the side of the incontinence article facing the body and thus form the relevant lateral leakage barrier and wherein the absorption body is arranged such that a transverse central line of the absorption body is arranged between the transverse central axis of the incontinence article and a hip opening edge of the abdominal portion which delimits the hip opening, and wherein the cuff elements are guided at varying distances from one another between the cuff base lines, and wherein the absorption body extends in the direction of the back portion over the transverse central axis of the incontinence article in the direction of a hip opening edge of the back portion, characterized in that a ratio of a length S2 of the absorption body behind the transverse central axis of the incontinence article, in the direction of the back portion, to a length S1 of the absorption body in front of the transverse central axis of the incontinence article, in the direction of the abdominal portion, is at most 0.30.
A method for generating a downlink frame in a orthogonal frequency division multiplexing, OFDM, based cellular system, the downlink frame including a synchronization channel symbol duration, comprising: generating a synchronization pattern by combination of a first code and a second code, wherein cell group information and frame synchronization information are determined based on the combination of the first code and the second code, wherein the cell group information is not determined based on only one of the first code and the second code, wherein the synchronization pattern that is generated for a cell group differs from another synchronization pattern that is generated for another cell group, and wherein a combination of the first code and the second code of the synchronization pattern is different from a combination of the first code and the second code of the another synchronization pattern; and allocating the synchronization pattern to a frequency domain of the synchronization channel symbol duration to generate a synchronization signal. generating a synchronization pattern by combination of a first code and a second code, wherein cell group information and frame synchronization information are determined based on the combination of the first code and the second code, wherein the cell group information is not determined based on only one of the first code and the second code, wherein the synchronization pattern that is generated for a cell group differs from another synchronization pattern that is generated for another cell group, and wherein a combination of the first code and the second code of the synchronization pattern is different from a combination of the first code and the second code of the another synchronization pattern; and allocating the synchronization pattern to a frequency domain of the synchronization channel symbol duration to generate a synchronization signal.
A hot press cushioning material, comprising: a cushioning material body in a form of a plate; and surface materials (3, 3A, 3B) provided on front and back sides of the cushioning material body, wherein the surface material (3, 3A, 3B) includes a core layer (31, 31a, 31b) composed of a heat resistant fiber material for a nonwoven structure, and a front-side resin layer (32, 32a, 32b) covering an entire front side of the core layer (31, 31a, 31b), characterized in that the core layer (31, 31a, 31b) has an air permeability of 5 cm 3 ·cm -2 ·s -1 or less and a bulk density of 0.8 g/cm 3 or more. a cushioning material body in a form of a plate; and surface materials (3, 3A, 3B) provided on front and back sides of the cushioning material body, wherein the surface material (3, 3A, 3B) includes a core layer (31, 31a, 31b) composed of a heat resistant fiber material for a nonwoven structure, and a front-side resin layer (32, 32a, 32b) covering an entire front side of the core layer (31, 31a, 31b), characterized in that the core layer (31, 31a, 31b) has an air permeability of 5 cm 3 ·cm -2 ·s -1 or less and a bulk density of 0.8 g/cm 3 or more.
A non-transitory computer-readable medium comprising instructions stored thereon, that if executed by one or more processors (302, 406), cause the one or more processors (302, 406) to: execute a polling group to: poll for received communications over multiple different transport layer protocols from a connection to identify a first received communication from a first transport layer protocol among the multiple different transport layer protocols and identify a second received communication from a second transport layer protocol among the multiple different transport layer protocols, wherein a change to the second transport layer protocol occurs in response to failure of the first transport layer protocol or slow transport rate using the first transport layer protocol. execute a polling group to: poll for received communications over multiple different transport layer protocols from a connection to identify a first received communication from a first transport layer protocol among the multiple different transport layer protocols and identify a second received communication from a second transport layer protocol among the multiple different transport layer protocols, wherein a change to the second transport layer protocol occurs in response to failure of the first transport layer protocol or slow transport rate using the first transport layer protocol.
Guiding device for a sliding door with two door wings (3a, 3b) which are slidable in parallel planes, comprising: - a carcass-sided lower guiding rail with a rear and a front guiding path (12a, 12b) which are each open towards the bottom and are separated from one another by a separating web, - a first guiding fitting which can be mounted to the front door wing and has a leg which protrudes to the rear and comprises a guiding end which is vertically angled in an upward direction and is slidably guided in the rear guiding path in the mounted state, and - a second guiding fitting which can be mounted to the rear door wing and has a vertical leg for mounting to the rear door wing, and a leg which protrudes to the rear and comprises a guiding end which is vertically angled in an upward direction and is slidably guided in the front guiding path in the mounted state, characterized in that the vertical leg of the second guiding fitting comprises a projection which protrudes to the rear and extends at least directly above the guiding end, and the horizontal separation between this projection and the front side of the guiding rail in the mounted state is smaller than the overall width of the separating web and of the guiding end of the second guiding fitting. - a carcass-sided lower guiding rail with a rear and a front guiding path (12a, 12b) which are each open towards the bottom and are separated from one another by a separating web, - a first guiding fitting which can be mounted to the front door wing and has a leg which protrudes to the rear and comprises a guiding end which is vertically angled in an upward direction and is slidably guided in the rear guiding path in the mounted state, and - a second guiding fitting which can be mounted to the rear door wing and has a vertical leg for mounting to the rear door wing, and a leg which protrudes to the rear and comprises a guiding end which is vertically angled in an upward direction and is slidably guided in the front guiding path in the mounted state,
Electrical and/or electronic component having at least one external electrical connection contact which is designed as a connection lug which is attached on one side and has the purpose of making electrical contact with a contact-making partner (20, 20') and the connection lug has a connecting side with a planar connecting area for making electrical contacts, in that the exposed end of the connection lug has a bending limb (15.2) which is bent out of the plane towards the connecting side through a compensation angle (α), wherein the bending limb (15.2) has the connecting area and the connection lug is designed in a resilient manner in such a way, characterized in that, with bearing contact, with force applied from the connecting side, of a planar contact-making partner (20, 20') on the free end of the bending limb (15.2), positional orientation of the connecting area can be adjusted counter to the compensation angle (α) until gap-free bearing of the connecting area on the planar contact-making partner (20, 20') is achieved.
An ultrasound diagnostic apparatus (1, 1a, 1b, 1c) comprising an ultrasound probe equipped with an ultrasound transducer (20, 60, 70,) including a pair of electrodes (21, 61, 71, 24, 62, 72) and an insulating portion (23, 63, 73) and a sacrificial layer (25, 64, 74) provided between the electrodes; DC-bias application means (6, 6b) adapted to apply a DC bias between the electrodes; transmission means (3, 3a) adapted to cause a portion of the insulating portion to vibrate through application of an ultrasound transmission pulse between the electrodes in addition to the DC bias, to thereby transmit an ultrasound wave toward a subject; reception means adapted to receive an ultrasound echo from the subject; and image-processing means adapted to produce an ultrasound image on the basis of a signal output from the reception means, the ultrasound diagnostic apparatus being characterized by further comprising discharge means (4, 4a, 80) adapted to discharge a charge accumulated in the insulating portion between the electrodes.
A user apparatus configured to perform communication with a base station in a mobile communication system that supports downlink spatial multiplexing, comprising: transmission means configured to transmit capability information of the user apparatus to the base station, the capability information including a user apparatus category and a number of supported downlink MIMO layers for TM3 or 4 up to rank 4; reception means configured to receive configuration information from the base station; bit width determination means configured, if a parameter indicating a transmission mode corresponding to the downlink spatial multiplexing, said transmission mode being TM3 or 4, and predetermined additional information are received as the configuration information, to determine a bit width of a rank indicator based on the predetermined additional information, wherein the predetermined additional information is an information element indicating the maximum number of MIMO layers transmitted from the base station as information to be used for determining a bit width of the rank indicator, and wherein the bit width determination means is configured to determine the rank indicator bit width by using, as the maximum number of layers, the minimum value of the number of antenna ports of PBCH and the maximum number of MIMO layers indicated by the received information element. transmission means configured to transmit capability information of the user apparatus to the base station, the capability information including a user apparatus category and a number of supported downlink MIMO layers for TM3 or 4 up to rank 4; reception means configured to receive configuration information from the base station; bit width determination means configured, if a parameter indicating a transmission mode corresponding to the downlink spatial multiplexing, said transmission mode being TM3 or 4, and predetermined additional information are received as the configuration information, to determine a bit width of a rank indicator based on the predetermined additional information, wherein the predetermined additional information is an information element indicating the maximum number of MIMO layers transmitted from the base station as information to be used for determining a bit width of the rank indicator, and wherein the bit width determination means is configured to determine the rank indicator bit width by using, as the maximum number of layers, the minimum value of the number of antenna ports of PBCH and the maximum number of MIMO layers indicated by the received information element.