An infrared detector manufactured from a foundry-defined silicon-on-insulator complementary metal oxide semiconductor (CMOS) wafer, the infrared detector comprising a diode group (142-148; 321, 341, 361; 621, 641) formed on an insulation layer (302, 602), the insulation layer (302, 602) configured to also function as a heat absorption layer to allow a flip-chip arrangement and containing a titanium layer, and/or a layer having a material with similar physical and chemical properties; a plurality of walls (106-108; 311-314) forming a through well (327, 347, 367) defining a first opening (328, 348, 368) and a second opening (329, 349, 369) opposing the first opening (328, 348, 368); and an infrared sensor located within the plurality of walls and configured to detect an infrared wave passing through at least one of the first opening (328, 348, 368) or the second opening (328, 349, 369) of the through well (327, 347, 367), the infrared sensor including: the diode group; a second heat absorption layer cooperating with the insulation layer (302, 602) for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening (328, 348, 368) but without contacting the walls of the through well (327, 347, 367), and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well (327, 347, 367) and adjacent to the first opening (328, 348, 368). a diode group (142-148; 321, 341, 361; 621, 641) formed on an insulation layer (302, 602), the insulation layer (302, 602) configured to also function as a heat absorption layer to allow a flip-chip arrangement and containing a titanium layer, and/or a layer having a material with similar physical and chemical properties; a plurality of walls (106-108; 311-314) forming a through well (327, 347, 367) defining a first opening (328, 348, 368) and a second opening (329, 349, 369) opposing the first opening (328, 348, 368); and an infrared sensor located within the plurality of walls and configured to detect an infrared wave passing through at least one of the first opening (328, 348, 368) or the second opening (328, 349, 369) of the through well (327, 347, 367), the infrared sensor including: the diode group; a second heat absorption layer cooperating with the insulation layer (302, 602) for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening (328, 348, 368) but without contacting the walls of the through well (327, 347, 367), and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well (327, 347, 367) and adjacent to the first opening (328, 348, 368). a second heat absorption layer cooperating with the insulation layer (302, 602) for substantially encapsulating the diode group; an umbrella layer (510; 627, 647) made from a heat absorbing material, covering the diode group (140; 142-148; 321, 341, 361; 621, 641), extending laterally outward beyond a cross-section of the infrared sensor to substantially cover the first opening (328, 348, 368) but without contacting the walls of the through well (327, 347, 367), and being configured to receive the infrared waves and convert the infrared wave into heat; and a support arm (132, 134; 323, 324, 343, 344, 363, 364) connecting the infrared sensor to at least one of the plurality of walls (106-108; 311-314); so as to suspend the infrared sensor within the through well (327, 347, 367) and adjacent to the first opening (328, 348, 368).