A SiC single crystal producing method using a crystal producing apparatus, the apparatus comprising: a liquid tub which accommodates a raw material solution containing silicon (Si) and carbon, a radial cross-section of an inner surface of the liquid tub being circular; a crystal holding element including a dipping shaft portion which holds a SiC seed crystal in the liquid tub on the outside in a radial direction from a z-axis that extends in a depth direction of the liquid tub and is positioned at a center of the radial cross-section; and a solution flowing element (3; 25) which allows the raw material solution in the liquid tub to flow in an arc direction along the inner surface of the liquid tub, the method comprising: a crystal growth process of growing a SiC single crystal by developing steps made of SiC on a crystal growth surface of the SiC seed crystal by a liquid phase growth method in the raw material solution, characterized in that the crystal holding element is movable in at least a partial region on an xy plane perpendicular to the z-axis, the crystal holding element is configured to allow the dipping shaft portion to revolve around the z-axis and rotate on its own axis so that an orientation of the crystal growth surface of the SiC seed crystal with respect to a flowing direction of the raw material solution can be set to two directions that are 180° different from each other, and the crystal growth process includes a smoothening process of removing at least a portion of step bunchings on the crystal growth surface by causing the raw material solution to flow along a direction opposite to a developing direction of the steps by adding an external force to the raw material solution using the solution flowing element (3; 25). a liquid tub which accommodates a raw material solution containing silicon (Si) and carbon, a radial cross-section of an inner surface of the liquid tub being circular; a crystal holding element including a dipping shaft portion which holds a SiC seed crystal in the liquid tub on the outside in a radial direction from a z-axis that extends in a depth direction of the liquid tub and is positioned at a center of the radial cross-section; and a solution flowing element (3; 25) which allows the raw material solution in the liquid tub to flow in an arc direction along the inner surface of the liquid tub, the method comprising: a crystal growth process of growing a SiC single crystal by developing steps made of SiC on a crystal growth surface of the SiC seed crystal by a liquid phase growth method in the raw material solution, characterized in that the crystal holding element is movable in at least a partial region on an xy plane perpendicular to the z-axis, the crystal holding element is configured to allow the dipping shaft portion to revolve around the z-axis and rotate on its own axis so that an orientation of the crystal growth surface of the SiC seed crystal with respect to a flowing direction of the raw material solution can be set to two directions that are 180° different from each other, and the crystal growth process includes a smoothening process of removing at least a portion of step bunchings on the crystal growth surface by causing the raw material solution to flow along a direction opposite to a developing direction of the steps by adding an external force to the raw material solution using the solution flowing element (3; 25). a crystal growth process of growing a SiC single crystal by developing steps made of SiC on a crystal growth surface of the SiC seed crystal by a liquid phase growth method in the raw material solution, characterized in that the crystal holding element is movable in at least a partial region on an xy plane perpendicular to the z-axis, the crystal holding element is configured to allow the dipping shaft portion to revolve around the z-axis and rotate on its own axis so that an orientation of the crystal growth surface of the SiC seed crystal with respect to a flowing direction of the raw material solution can be set to two directions that are 180° different from each other, and the crystal growth process includes a smoothening process of removing at least a portion of step bunchings on the crystal growth surface by causing the raw material solution to flow along a direction opposite to a developing direction of the steps by adding an external force to the raw material solution using the solution flowing element (3; 25).