An image sensor circuit comprising: a pixel cell array having a plurality of pixel cells arranged along a plurality of column lines (4o, 4e), an odd readout circuit (3o, 6o, 7) connected to odd column lines and an even readout circuit (3e, 6e, 7) connected to even column lines, wherein the odd readout circuit (3o, 6o, 7) is located at a first side of said pixel cell array and the even readout circuit (3e, 6e, 7) is located at a second side of said pixel cell array opposite to said first side, wherein the odd readout circuit (3o, 6o, 7) comprises a plurality of bus bars (11 1, 11 2,..., 11 n), each bus bar having a plurality of odd column lines associated to it by switches (13b, 13d), and the even readout circuit comprises a plurality of bus bars, each bus bar having a plurality of even column lines associated to it by switches, wherein no two adjacent odd column lines and no two adjacent even column lines, respectively, are connected to the same bus bar, wherein, in each of said readout circuits, the plurality of switches for selectively opening and closing an electrical connection between one of said column lines and one of said bus bars forms a bus bar multiplexer, wherein each of said readout circuits comprises an ADC multiplexer for selectively applying an output signal of one of said bus bars to a respective analog-to-digital converter provided with each readout circuit, characterized in that the bus bars and the column lines are arranged at two different layers in the image sensor circuit, and each switch is placed at an intersection between a column line and a bus bar connected by said switch. a pixel cell array having a plurality of pixel cells arranged along a plurality of column lines (4o, 4e), an odd readout circuit (3o, 6o, 7) connected to odd column lines and an even readout circuit (3e, 6e, 7) connected to even column lines, wherein the odd readout circuit (3o, 6o, 7) is located at a first side of said pixel cell array and the even readout circuit (3e, 6e, 7) is located at a second side of said pixel cell array opposite to said first side, wherein the odd readout circuit (3o, 6o, 7) comprises a plurality of bus bars (11 1, 11 2,..., 11 n), each bus bar having a plurality of odd column lines associated to it by switches (13b, 13d), and the even readout circuit comprises a plurality of bus bars, each bus bar having a plurality of even column lines associated to it by switches, wherein no two adjacent odd column lines and no two adjacent even column lines, respectively, are connected to the same bus bar, wherein, in each of said readout circuits, the plurality of switches for selectively opening and closing an electrical connection between one of said column lines and one of said bus bars forms a bus bar multiplexer, wherein each of said readout circuits comprises an ADC multiplexer for selectively applying an output signal of one of said bus bars to a respective analog-to-digital converter provided with each readout circuit, characterized in that the bus bars and the column lines are arranged at two different layers in the image sensor circuit, and each switch is placed at an intersection between a column line and a bus bar connected by said switch.