A light emitting device comprising: a first electrode including patterns; a first semiconductor layer disposed on the first electrode and including an n-dopant; a second semiconductor layer disposed on the first semiconductor layer and including the n-dopant having a doping concentration lower than a doping concentration of the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer to adjust stress; a first conductive semiconductor layer on the third semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode 160 on the second conductive semiconductor layer, wherein the first semiconductor layer includes patterns overlapped with the patterns of the first electrode, and wherein the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer characterised in that the first semiconductor layer comprises a superlattice layer including at least two pairs of a GaN layer and an Al x Ga (1-x) N layer (0≤x≤1), wherein the second semiconductor layer comprises Al y G 3(1-y) N (0 < y≤1), wherein the third semiconductor layer comprises Al z G 3(1-z) N (0 < z≤1), wherein the Al composition ratio of the third semiconductor layer is a value between the Al composition ratio of the second semiconductor layer and the Al composition ration of the first conductive semiconductor layer, wherein the composition ratio (x) of aluminum (Al) in the Al x G 3(1-x) N layer (0≤x≤1) comprises in a range of 2% to 15%, and wherein the first electrode is in contact with the GaN layer and Al x G 3(1-x) N layer (0≤x≤1). a first electrode including patterns; a first semiconductor layer disposed on the first electrode and including an n-dopant; a second semiconductor layer disposed on the first semiconductor layer and including the n-dopant having a doping concentration lower than a doping concentration of the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer to adjust stress; a first conductive semiconductor layer on the third semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode 160 on the second conductive semiconductor layer, wherein the first semiconductor layer includes patterns overlapped with the patterns of the first electrode, and wherein the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer characterised in that the first semiconductor layer comprises a superlattice layer including at least two pairs of a GaN layer and an Al x Ga (1-x) N layer (0≤x≤1), wherein the second semiconductor layer comprises Al y G 3(1-y) N (0 < y≤1), wherein the third semiconductor layer comprises Al z G 3(1-z) N (0 < z≤1), wherein the Al composition ratio of the third semiconductor layer is a value between the Al composition ratio of the second semiconductor layer and the Al composition ration of the first conductive semiconductor layer, wherein the composition ratio (x) of aluminum (Al) in the Al x G 3(1-x) N layer (0≤x≤1) comprises in a range of 2% to 15%, and wherein the first electrode is in contact with the GaN layer and Al x G 3(1-x) N layer (0≤x≤1).