Detecting sensor comprising: a substrate; a plurality of ionization sensitive field effect devices, arranged on said substrate, wherein each of said ionization sensitive field effect devices comprises a semiconductor channel, wherein said semiconductor channel is a layer and is made of an amorphous oxide, a source electrode connected to said semiconductor channel, a drain electrode connected to said semiconductor channel, such that said semiconductor channel is interposed between said source electrode and said drain electrode, a gate electrode having a gate capacity ( C G), wherein the gate capacity ( C G) is a function of the gate-source voltage ( V GS) at different frequencies, and a dielectric layer, interposed between said gate electrode and said semiconductor channel, wherein said dielectric layer is arranged in order to be exposable to an ionizing radiation, such as X-rays and the like, wherein said gate electrode comprises at least one main layer, made of at least one material having at least one cation element with atomic number selected so as to increase the absorption of said incident ionizing radiation to be sensed, and wherein said at least one material of said dielectric layer has a high atomic number Z, said atomic number Z being higher than 36 (Z>36); and at least one RFID transmitter having a pair of electrodes connected to the source electrode and the gate electrode of a related field effect device, configured for being connectable to a RFID receiver (RFID-R); wherein said RFID transmitter switches its state from a first logic state of high-impedance to a second logic state of low-impedance upon an ionization event and transmits the state change to said RFID receiver (RFID-R). a substrate; a plurality of ionization sensitive field effect devices, arranged on said substrate, wherein each of said ionization sensitive field effect devices comprises a semiconductor channel, wherein said semiconductor channel is a layer and is made of an amorphous oxide, a source electrode connected to said semiconductor channel, a drain electrode connected to said semiconductor channel, such that said semiconductor channel is interposed between said source electrode and said drain electrode, a gate electrode having a gate capacity ( C G), wherein the gate capacity ( C G) is a function of the gate-source voltage ( V GS) at different frequencies, and a dielectric layer, interposed between said gate electrode and said semiconductor channel, wherein said dielectric layer is arranged in order to be exposable to an ionizing radiation, such as X-rays and the like, wherein said gate electrode comprises at least one main layer, made of at least one material having at least one cation element with atomic number selected so as to increase the absorption of said incident ionizing radiation to be sensed, and wherein said at least one material of said dielectric layer has a high atomic number Z, said atomic number Z being higher than 36 (Z>36); and a semiconductor channel, wherein said semiconductor channel is a layer and is made of an amorphous oxide, a source electrode connected to said semiconductor channel, a drain electrode connected to said semiconductor channel, such that said semiconductor channel is interposed between said source electrode and said drain electrode, a gate electrode having a gate capacity ( C G), wherein the gate capacity ( C G) is a function of the gate-source voltage ( V GS) at different frequencies, and a dielectric layer, interposed between said gate electrode and said semiconductor channel, wherein said dielectric layer is arranged in order to be exposable to an ionizing radiation, such as X-rays and the like, wherein said gate electrode comprises at least one main layer, made of at least one material having at least one cation element with atomic number selected so as to increase the absorption of said incident ionizing radiation to be sensed, and wherein said at least one material of said dielectric layer has a high atomic number Z, said atomic number Z being higher than 36 (Z>36); and interposed between said gate electrode and said semiconductor channel, wherein said dielectric layer is arranged in order to be exposable to an ionizing radiation, such as X-rays and the like, wherein said gate electrode comprises at least one main layer, made of at least one material having at least one cation element with atomic number selected so as to increase the absorption of said incident ionizing radiation to be sensed, and wherein said at least one material of said dielectric layer has a high atomic number Z, said atomic number Z being higher than 36 (Z>36); and at least one RFID transmitter having a pair of electrodes connected to the source electrode and the gate electrode of a related field effect device, configured for being connectable to a RFID receiver (RFID-R); wherein said RFID transmitter switches its state from a first logic state of high-impedance to a second logic state of low-impedance upon an ionization event and transmits the state change to said RFID receiver (RFID-R).