A display apparatus comprising a pixel including a driving thin film transistor and a storage capacitor (Cst), wherein the pixel comprises: a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer at least partially overlapping the driving channel region in a plane view; a second electrode layer on the first electrode layer and overlapping the first electrode layer in the plane view; a pixel electrode on the second electrode layer with an insulating layer (150, 160, 180) therebetween; a pixel-defining layer on the pixel electrode and having an opening exposing at least a portion of an upper surface of the pixel electrode and defining a light-emitting region; and a conductive layer between the first electrode layer and the pixel electrode and including an extending portion at least partially overlapping the light-emitting region to pass over a central portion of the light-emitting region, wherein the conductive layer is electrically connected to a driving voltage line, wherein the first electrode layer corresponds to a gate electrode; the second electrode layer overlapping the first electrode layer with a second gate insulating layer between the second electrode layer and the first electrode layer, the second electrode layer corresponds to a second storage capacitor plate of the storage capacitor (Cst), and the conductive layer is provided between the pixel electrode and the second electrode layer and having an insulating layer therebetween, characterized in that in the plane view, the light-emitting region has an overlapping region with a first region and a second region, wherein the overlapping region overlaps the extending portion, the first region located at one side of the overlapping region, and the second region located at another side of the overlapping region, wherein an area of the first region is equal to an area of the second region, wherein the extending portion is arranged to divide the light-emitting region symmetrically in a plane view. a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer at least partially overlapping the driving channel region in a plane view; a second electrode layer on the first electrode layer and overlapping the first electrode layer in the plane view; a pixel electrode on the second electrode layer with an insulating layer (150, 160, 180) therebetween; a pixel-defining layer on the pixel electrode and having an opening exposing at least a portion of an upper surface of the pixel electrode and defining a light-emitting region; and a conductive layer between the first electrode layer and the pixel electrode and including an extending portion at least partially overlapping the light-emitting region to pass over a central portion of the light-emitting region, wherein the conductive layer is electrically connected to a driving voltage line, wherein the first electrode layer corresponds to a gate electrode; the second electrode layer overlapping the first electrode layer with a second gate insulating layer between the second electrode layer and the first electrode layer, the second electrode layer corresponds to a second storage capacitor plate of the storage capacitor (Cst), and the conductive layer is provided between the pixel electrode and the second electrode layer and having an insulating layer therebetween, characterized in that in the plane view, the light-emitting region has an overlapping region with a first region and a second region, wherein the overlapping region overlaps the extending portion, the first region located at one side of the overlapping region, and the second region located at another side of the overlapping region, wherein an area of the first region is equal to an area of the second region, wherein the extending portion is arranged to divide the light-emitting region symmetrically in a plane view.