A detector device for the detection of an electromagnetic radiation (43, 46) assisted by majority carrier current comprising: - a semiconductor layer on which an electromagnetic radiation (43, 46) can impinge for generating pairs of majority and minority carriers therein and which is doped with a dopant of a first conductivity type, the semiconductor layer including a pixel, wherein the pixel includes: - at least two control regions (MIX0, MIX1) formed as wells in the semiconductor layer, being doped with a dopant of the first conductivity type; - a source for generating a majority carrier current in the semiconductor layer between the at least two control regions (MIX0, MIX1), the majority current being associated with an electrical field; - at least two detection regions (DETO, DET1) formed as wells in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction with the semiconductor layer and collecting generated minority carriers, the minority carriers being directed towards one of the at least two detection regions (DETO, DET1) under the influence of the electrical field associated with the majority carrier current; wherein at least two taps are formed for generating the current of majority carriers and receiving the minority carriers, wherein each tap includes a detection region (DETO, DET1) of the at least two detection regions (DET0, DET1) and a control region (MIX0, MIX1) of the at least two control regions (MIX0, MIX1), wherein in each tap of the at least two taps the control region (MIX0, MIX1) is surrounded by the detection region; wherein the concentration of dopants of the first conductivity type in the semiconductor layer is adapted to provide an electrical insulation between the at least two detection regions (DETO, DET1) by avoiding leakage of minority carriers from the at least two detection regions (DETO, DET1), wherein the concentration of dopants of the first conductivity type is sufficiently high in order to avoid the leakage of minority carriers and is sufficiently low in order to provide a resistivity between the at least two detection regions (DETO, DET1) which provides a sufficient electrical isolation; wherein the thickness of a semiconductor substrate highly doped with a dopant of a first conductivity type on which the semiconductor layer is formed is configured for Back Side Illumination; and wherein the pixel further comprises a semiconductor region of the first conductivity type formed in the semiconductor layer and located between the at least two detection regions (DETO, DET1) for insulating the at least two detection regions (DETO, DET1), the semiconductor region being a well or a deep well and comprising pixel circuitry elements (21, 22). - a semiconductor layer on which an electromagnetic radiation (43, 46) can impinge for generating pairs of majority and minority carriers therein and which is doped with a dopant of a first conductivity type, the semiconductor layer including a pixel, wherein the pixel includes: - at least two control regions (MIX0, MIX1) formed as wells in the semiconductor layer, being doped with a dopant of the first conductivity type; - a source for generating a majority carrier current in the semiconductor layer between the at least two control regions (MIX0, MIX1), the majority current being associated with an electrical field; - at least two detection regions (DETO, DET1) formed as wells in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction with the semiconductor layer and collecting generated minority carriers, the minority carriers being directed towards one of the at least two detection regions (DETO, DET1) under the influence of the electrical field associated with the majority carrier current; - at least two control regions (MIX0, MIX1) formed as wells in the semiconductor layer, being doped with a dopant of the first conductivity type; - a source for generating a majority carrier current in the semiconductor layer between the at least two control regions (MIX0, MIX1), the majority current being associated with an electrical field; - at least two detection regions (DETO, DET1) formed as wells in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction with the semiconductor layer and collecting generated minority carriers, the minority carriers being directed towards one of the at least two detection regions (DETO, DET1) under the influence of the electrical field associated with the majority carrier current;