A light emitting device comprising: a first light emitting structure comprising a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first metal layer under the first light emitting structure; a second light emitting structure comprising a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second metal layer under the second light emitting structure; and a contact part electrically connected to the second metal layer; an insulating layer disposed between the contact part and the second conductive type second semiconductor layer of the light emitting region of the first light emitting structure, and between the contact part and the first active layer of the light emitting region of the first light emitting structure, wherein the insulating layer electrically insulates the contact part from the first active layer of the light emitting region of the first light emitting structure and from the second conductive type second semiconductor layer of the light emitting region of the first light emitting structure, and wherein the contact part makes direct contact with a top surface of the first conductive type first semiconductor layer, characterized in that the insulating layer is disposed in contact with the inner part of the first conductive type first semiconductor layer, and the contact part makes direct contact with a lateral side of the first conductive type first semiconductor layer and a top surface of the second metal layer. a first light emitting structure comprising a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first metal layer under the first light emitting structure; a second light emitting structure comprising a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer; a second metal layer under the second light emitting structure; and a contact part electrically connected to the second metal layer; an insulating layer disposed between the contact part and the second conductive type second semiconductor layer of the light emitting region of the first light emitting structure, and between the contact part and the first active layer of the light emitting region of the first light emitting structure, wherein the insulating layer electrically insulates the contact part from the first active layer of the light emitting region of the first light emitting structure and from the second conductive type second semiconductor layer of the light emitting region of the first light emitting structure, and wherein the contact part makes direct contact with a top surface of the first conductive type first semiconductor layer, characterized in that the insulating layer is disposed in contact with the inner part of the first conductive type first semiconductor layer, and the contact part makes direct contact with a lateral side of the first conductive type first semiconductor layer and a top surface of the second metal layer.