A Media Access Control, MAC, chip, characterized by comprising: a silicon substrate layer, a silicon dioxide base layer formed on a surface of the silicon substrate layer and a silicon base layer formed on a surface, away from the silicon substrate layer, of the silicon dioxide base layer; and an element layer formed on a surface, away from the silicon dioxide base layer, of the silicon base layer, wherein the element layer comprises a laser, a passive device, a detector, a drive circuit and an MAC chip body; wherein the drive circuit is respectively connected with the laser, the detector and the MAC chip body, and the laser is connected with the detector through the passive device, the MAC chip body is connectable with an external service interface module to perform service interaction with the external service interface module; the drive circuit comprises: a laser drive circuit respectively connected with the MAC chip body and the laser; and the drive circuit further comprises: an amplification circuit connected with the detector; and a filter circuit respectively connected with the MAC chip body and the amplification circuit, so that a signal detected by the detector is amplified and filtered through the amplification circuit and the filter circuit to make the signal be restored when the detected signal has interference information; wherein the passive device, the detector, the drive circuit and the MAC chip body are respectively formed on the silicon base layer by adopting a silicon material growth mode. a silicon substrate layer, a silicon dioxide base layer formed on a surface of the silicon substrate layer and a silicon base layer formed on a surface, away from the silicon substrate layer, of the silicon dioxide base layer; and an element layer formed on a surface, away from the silicon dioxide base layer, of the silicon base layer, wherein the element layer comprises a laser, a passive device, a detector, a drive circuit and an MAC chip body; wherein the drive circuit is respectively connected with the laser, the detector and the MAC chip body, and the laser is connected with the detector through the passive device, the MAC chip body is connectable with an external service interface module to perform service interaction with the external service interface module; the drive circuit comprises: a laser drive circuit respectively connected with the MAC chip body and the laser; and the drive circuit further comprises: an amplification circuit connected with the detector; and a filter circuit respectively connected with the MAC chip body and the amplification circuit, so that a signal detected by the detector is amplified and filtered through the amplification circuit and the filter circuit to make the signal be restored when the detected signal has interference information; wherein the passive device, the detector, the drive circuit and the MAC chip body are respectively formed on the silicon base layer by adopting a silicon material growth mode. a laser drive circuit respectively connected with the MAC chip body and the laser; and the drive circuit further comprises: an amplification circuit connected with the detector; and a filter circuit respectively connected with the MAC chip body and the amplification circuit, so that a signal detected by the detector is amplified and filtered through the amplification circuit and the filter circuit to make the signal be restored when the detected signal has interference information; wherein the passive device, the detector, the drive circuit and the MAC chip body are respectively formed on the silicon base layer by adopting a silicon material growth mode. an amplification circuit connected with the detector; and a filter circuit respectively connected with the MAC chip body and the amplification circuit, so that a signal detected by the detector is amplified and filtered through the amplification circuit and the filter circuit to make the signal be restored when the detected signal has interference information; wherein the passive device, the detector, the drive circuit and the MAC chip body are respectively formed on the silicon base layer by adopting a silicon material growth mode.