A semiconductor light emitting device having a plurality of semiconductor layers (30, 40, 50), including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; and a non-conductive distributed bragg reflector (91a, 91d) provided on the plurality of semiconductor layers (30, 40, 50), reflecting the light from the active layer; characterized by comprising: a first light-transmitting film (91e, 91f) in contact with the non-conductive distributed bragg reflector (91a, 91d) from a side opposite to the plurality of semiconductor layers (30, 40, 50) with respect to the non-conductive distributed bragg reflector (91a, 91d) and having a thickness greater than λ/4n to be distinguished from the top layer of the non-conductive distributed bragg reflector (91a or 91d), in which λ is a wavelength of light generated in the active layer, and n is a refractive index of the first light-transmitting film (91e or 91f), wherein the first light-transmitting film (91e, 91f) has a refractive index lower than an effective refractive index of the non-conductive distributed bragg reflector (91a, 91d); first and second electrodes (80, 92), supplying electrons and holes to the plurality of semiconductor layers (30, 40, 50) and provided on and contacted with the first light-transmitting film (91e, 91f); and, a second light-transmitting film (91b or 91c) made of a dielectric material, interposed between the plurality of semiconductor layers (30, 40 and 50) and the non-conductive distributed bragg reflector (91a or 91d) and in contact with the non-conductive distributed bragg reflector (91a or 91d) opposite to the first light-transmitting film (91f or 91e) wherein the non-conductive distributed bragg reflector (91a, 91d) has an effective refractive index higher than the refractive index of the second light-transmitting film (91b, 91c), wherein the non-conductive distributed bragg reflector (91a or 91d) serves as a propagation part in which light trapped can be propagated to the lateral face of the non-conductive distributed bragg reflector (91a or 91d). a first light-transmitting film (91e, 91f) in contact with the non-conductive distributed bragg reflector (91a, 91d) from a side opposite to the plurality of semiconductor layers (30, 40, 50) with respect to the non-conductive distributed bragg reflector (91a, 91d) and having a thickness greater than λ/4n to be distinguished from the top layer of the non-conductive distributed bragg reflector (91a or 91d), in which λ is a wavelength of light generated in the active layer, and n is a refractive index of the first light-transmitting film (91e or 91f), wherein the first light-transmitting film (91e, 91f) has a refractive index lower than an effective refractive index of the non-conductive distributed bragg reflector (91a, 91d); first and second electrodes (80, 92), supplying electrons and holes to the plurality of semiconductor layers (30, 40, 50) and provided on and contacted with the first light-transmitting film (91e, 91f); and, a second light-transmitting film (91b or 91c) made of a dielectric material, interposed between the plurality of semiconductor layers (30, 40 and 50) and the non-conductive distributed bragg reflector (91a or 91d) and in contact with the non-conductive distributed bragg reflector (91a or 91d) opposite to the first light-transmitting film (91f or 91e) wherein the non-conductive distributed bragg reflector (91a, 91d) has an effective refractive index higher than the refractive index of the second light-transmitting film (91b, 91c), wherein the non-conductive distributed bragg reflector (91a or 91d) serves as a propagation part in which light trapped can be propagated to the lateral face of the non-conductive distributed bragg reflector (91a or 91d).