A circuit for temperature compensation of a signal, the circuit including: - an input port configured for receiving a sensing signal ( V H) from a Hall sensor, - an output port (202a, 202b) configured for providing a compensated Hall sensing signal ( V out), - a compensation stage between the input port and the output port (202a, 202b), the compensation stage having a gain inversely proportional to Hall sensor drift mobility, μ n, wherein the compensated sensing signal ( V out) is temperature-compensated, and wherein the compensation stage includes at least one gain-setting resistive element (H1, R1) having a resistance value inversely proportional to Hall sensor drift mobility, μn; the circuit being characterized in that: - the compensation stage includes a gain control input configured for receiving a control signal (V pwell), the gain of the compensation stage controllable as a function of the control signal (V pwell) at the gain control input with said gain inversely proportional to the ratio, r n, of the Hall sensor mobility, μ' n, to the Hall sensor drift mobility μ n, - the control signal (V pwell) received at the gain control input is a temperature-dependent control signal (V pwell), - the resistive element (H1, R1) includes a resistance control input configured for receiving said temperature-dependent control signal (V pwell), the resistance value of the resistive element (H1, R1) controllable as a function of the control signal (V pwell) at the resistance control input, - the resistive element (H1, R1) includes a depletion region in a first semiconductor well formed in a semiconductor well of opposed polarity, and - the control signal (V pwell) at the resistance control input controls the thickness of said depletion region in said first well. - an input port configured for receiving a sensing signal ( V H) from a Hall sensor, - an output port (202a, 202b) configured for providing a compensated Hall sensing signal ( V out), - a compensation stage between the input port and the output port (202a, 202b), the compensation stage having a gain inversely proportional to Hall sensor drift mobility, μ n, wherein the compensated sensing signal ( V out) is temperature-compensated, and wherein the compensation stage includes at least one gain-setting resistive element (H1, R1) having a resistance value inversely proportional to Hall sensor drift mobility, μn; the circuit being characterized in that: - the compensation stage includes a gain control input configured for receiving a control signal (V pwell), the gain of the compensation stage controllable as a function of the control signal (V pwell) at the gain control input with said gain inversely proportional to the ratio, r n, of the Hall sensor mobility, μ' n, to the Hall sensor drift mobility μ n, - the control signal (V pwell) received at the gain control input is a temperature-dependent control signal (V pwell), - the resistive element (H1, R1) includes a resistance control input configured for receiving said temperature-dependent control signal (V pwell), the resistance value of the resistive element (H1, R1) controllable as a function of the control signal (V pwell) at the resistance control input, - the resistive element (H1, R1) includes a depletion region in a first semiconductor well formed in a semiconductor well of opposed polarity, and - the control signal (V pwell) at the resistance control input controls the thickness of said depletion region in said first well. - the compensation stage includes a gain control input configured for receiving a control signal (V pwell), the gain of the compensation stage controllable as a function of the control signal (V pwell) at the gain control input with said gain inversely proportional to the ratio, r n, of the Hall sensor mobility, μ' n, to the Hall sensor drift mobility μ n, - the control signal (V pwell) received at the gain control input is a temperature-dependent control signal (V pwell), - the resistive element (H1, R1) includes a resistance control input configured for receiving said temperature-dependent control signal (V pwell), the resistance value of the resistive element (H1, R1) controllable as a function of the control signal (V pwell) at the resistance control input, - the resistive element (H1, R1) includes a depletion region in a first semiconductor well formed in a semiconductor well of opposed polarity, and - the control signal (V pwell) at the resistance control input controls the thickness of said depletion region in said first well.