An imaging device, comprising: an array of pixels and at least one charge overflow detection circuit, characterized in that the charge overflow circuit is configured to dynamically determine an integration period for at least one pixel, wherein the pixel is reset and a new and shorter integration period is initiated for said pixel in response to detection of charge overflow for said pixel of charge stored in the pixel, and wherein an integration period in progress for a pixel is continued in response to non-detection of charge overflow for said pixel, and the pixel is committed to said integration period in progress and further detection of charge overflow for the pixel are suspended until the integration in progress to which the pixel is committed is completed and the pixel value is read, the imaging device further comprising correlated double sampling for at least one of final readout of a pixel value and for a charge overflow detection reading from said charge overflow detection circuit, said at least one charge overflow detection circuit further comprising a 4 transistor based pixel design comprising a pinned photodiode, and a transfer gate between a photodiode charge collection accumulation area and a floating diffusion, said transfer gate comprising a control input, wherein said control input is set to establish a threshold potential (105, 112, 122, 202, 212, 222, 402, 412, 422, 432) at which said charge overflow occurs by momentarily lowering a blocking state potential to an intermediate state potential corresponding to said threshold potential a predetermined time after said integration period in progress is initiated. an array of pixels and at least one charge overflow detection circuit, characterized in that the charge overflow circuit is configured to dynamically determine an integration period for at least one pixel, wherein the pixel is reset and a new and shorter integration period is initiated for said pixel in response to detection of charge overflow for said pixel of charge stored in the pixel, and wherein an integration period in progress for a pixel is continued in response to non-detection of charge overflow for said pixel, and the pixel is committed to said integration period in progress and further detection of charge overflow for the pixel are suspended until the integration in progress to which the pixel is committed is completed and the pixel value is read, the imaging device further comprising correlated double sampling for at least one of final readout of a pixel value and for a charge overflow detection reading from said charge overflow detection circuit, said at least one charge overflow detection circuit further comprising a 4 transistor based pixel design comprising a pinned photodiode, and a transfer gate between a photodiode charge collection accumulation area and a floating diffusion, said transfer gate comprising a control input, wherein said control input is set to establish a threshold potential (105, 112, 122, 202, 212, 222, 402, 412, 422, 432) at which said charge overflow occurs by momentarily lowering a blocking state potential to an intermediate state potential corresponding to said threshold potential a predetermined time after said integration period in progress is initiated.