A light emitting element comprising: a first n-type semiconductor layer; a first active layer located above the first n-type semiconductor layer and comprising a first well layer containing indium; a first p-type semiconductor layer located above the first active layer; a second n-type semiconductor layer located above and in contact with the first p-type semiconductor layer; a second active layer located above the second n-type semiconductor layer, the second active layer comprising: a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a second p-type semiconductor located above the second active layer, wherein: each of the first n-type semiconductor layer, the first active layer, the first p-type semiconductor layer, the second n-type semiconductor layer, the second active layer, and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer, an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer, and a thickness of the first intermediate layer is less than a thickness of the second well layer. a first n-type semiconductor layer; a first active layer located above the first n-type semiconductor layer and comprising a first well layer containing indium; a first p-type semiconductor layer located above the first active layer; a second n-type semiconductor layer located above and in contact with the first p-type semiconductor layer; a second active layer located above the second n-type semiconductor layer, the second active layer comprising: a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a first intermediate layer located above the second n-type semiconductor layer and containing indium, and a second well layer located above the first intermediate layer and containing indium; and a second p-type semiconductor located above the second active layer, wherein: each of the first n-type semiconductor layer, the first active layer, the first p-type semiconductor layer, the second n-type semiconductor layer, the second active layer, and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer, an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer, and a thickness of the first intermediate layer is less than a thickness of the second well layer. each of the first n-type semiconductor layer, the first active layer, the first p-type semiconductor layer, the second n-type semiconductor layer, the second active layer, and the second p-type semiconductor is formed of a nitride semiconductor, an indium composition ratio of the first well layer is less than an indium composition ratio of the second well layer, an indium composition ratio of the first intermediate layer is less than an indium composition ratio of the first well layer, and a thickness of the first intermediate layer is less than a thickness of the second well layer.