An integrated circuit, comprising: a substrate including semiconductor material extending to a top surface of the substrate; field oxide disposed in the substrate; a first metal oxide semiconductor transistor of a first polarity, including: a gate dielectric layer at the top surface of the semiconductor material; a gate over the gate dielectric layer of the first MOS transistor; a first epitaxial source/drain region in the substrate between the gate of the first MOS transistor and the field oxide, abutting the field oxide, having an angled facet facing the field oxide such that the first epitaxial source/drain region is laterally separated from the field oxide at the top surface of the field oxide by a gap which extends at least 20 nanometers down from the top surface of the field oxide; a second epitaxial source/drain region in the substrate adjacent to the gate of the first MOS transistor, opposite from the first epitaxial source/drain region; and source/drain spacers laterally adjacent to the gate of the first MOS transistor; a gate structure over the field oxide, including: a gate over the field oxide, such that the gate of the gate structure does not overlap an edge of the field oxide; and source/drain spacers laterally adjacent to the gate of the gate structure; a gap filler of silicon dioxide-based dielectric material partially filling the gap, abutting the field oxide and extending down to and contacting the first epitaxial source/drain region at a bottom of the gap; metal silicide extends into the gap on the angled facet of the first epitaxial source/drain region and covers at least one half of the first epitaxial source/drain region; and a contact on the metal silicide on the angled facet of the first epitaxial source/drain region. a substrate including semiconductor material extending to a top surface of the substrate; field oxide disposed in the substrate; a first metal oxide semiconductor transistor of a first polarity, including: a gate dielectric layer at the top surface of the semiconductor material; a gate over the gate dielectric layer of the first MOS transistor; a first epitaxial source/drain region in the substrate between the gate of the first MOS transistor and the field oxide, abutting the field oxide, having an angled facet facing the field oxide such that the first epitaxial source/drain region is laterally separated from the field oxide at the top surface of the field oxide by a gap which extends at least 20 nanometers down from the top surface of the field oxide; a second epitaxial source/drain region in the substrate adjacent to the gate of the first MOS transistor, opposite from the first epitaxial source/drain region; and source/drain spacers laterally adjacent to the gate of the first MOS transistor; a gate dielectric layer at the top surface of the semiconductor material; a gate over the gate dielectric layer of the first MOS transistor; a first epitaxial source/drain region in the substrate between the gate of the first MOS transistor and the field oxide, abutting the field oxide, having an angled facet facing the field oxide such that the first epitaxial source/drain region is laterally separated from the field oxide at the top surface of the field oxide by a gap which extends at least 20 nanometers down from the top surface of the field oxide; a second epitaxial source/drain region in the substrate adjacent to the gate of the first MOS transistor, opposite from the first epitaxial source/drain region; and source/drain spacers laterally adjacent to the gate of the first MOS transistor; a gate structure over the field oxide, including: a gate over the field oxide, such that the gate of the gate structure does not overlap an edge of the field oxide; and source/drain spacers laterally adjacent to the gate of the gate structure; a gate over the field oxide, such that the gate of the gate structure does not overlap an edge of the field oxide; and source/drain spacers laterally adjacent to the gate of the gate structure; a gap filler of silicon dioxide-based dielectric material partially filling the gap, abutting the field oxide and extending down to and contacting the first epitaxial source/drain region at a bottom of the gap; metal silicide extends into the gap on the angled facet of the first epitaxial source/drain region and covers at least one half of the first epitaxial source/drain region; and a contact on the metal silicide on the angled facet of the first epitaxial source/drain region.