A radiation-emitting semiconductor chip, which has a carrier, a semiconductor body having a semiconductor layer sequence, a first contact and a second contact, wherein - the semiconductor layer sequence comprises an active region intended for generating radiation, the active region is arranged between a first semiconductor layer and a second semiconductor layer; - the carrier has a main surface facing the semiconductor body; - a growth substrate for the semiconductor layer sequence of the semiconductor body is removed and the carrier mechanically stabilizes the semiconductor body; - the first semiconductor layer is arranged on the side facing the main surface of the carrier and can be electrically contacted by means of the first contact; - the second semiconductor layer can be electrically contacted by means of the second contact; - a protective diode is formed in a current path which runs between the first contact and the second contact through the carrier; - the first contact is connected to the first semiconductor layer via a first connection layer in an electrically conductively manner, and the first connection layer is arranged between the semiconductor body and the carrier; - the semiconductor body has at least one recess which extends through the active region and which is provided for electrically contacting the second semiconductor layer, and - the second semiconductor layer is connected to a second connection layer in an electrically conductively manner, and the second connection layer extends through the recess, characterized in that - the first connection layer and the second connection layer are arranged in succession between the carrier and the semiconductor body, so that the second connection layer is closer to the carrier than the first connection layer, - the first contact and the second contact are arranged on different sides of the carrier, and - the semiconductor body is connected to the carrier in a substance-locking manner. - the semiconductor layer sequence comprises an active region intended for generating radiation, the active region is arranged between a first semiconductor layer and a second semiconductor layer; - the carrier has a main surface facing the semiconductor body; - a growth substrate for the semiconductor layer sequence of the semiconductor body is removed and the carrier mechanically stabilizes the semiconductor body; - the first semiconductor layer is arranged on the side facing the main surface of the carrier and can be electrically contacted by means of the first contact; - the second semiconductor layer can be electrically contacted by means of the second contact; - a protective diode is formed in a current path which runs between the first contact and the second contact through the carrier; - the first contact is connected to the first semiconductor layer via a first connection layer in an electrically conductively manner, and the first connection layer is arranged between the semiconductor body and the carrier; - the semiconductor body has at least one recess which extends through the active region and which is provided for electrically contacting the second semiconductor layer, and - the second semiconductor layer is connected to a second connection layer in an electrically conductively manner, and the second connection layer extends through the recess, characterized in that - the first connection layer and the second connection layer are arranged in succession between the carrier and the semiconductor body, so that the second connection layer is closer to the carrier than the first connection layer, - the first contact and the second contact are arranged on different sides of the carrier, and - the semiconductor body is connected to the carrier in a substance-locking manner.