A pressure sensor comprising: - a first silicon layer comprising: - a top portion of a frame; - a boss; and - trenches defining both a plurality of beams and the boss, wherein the plurality of beams connects the boss to the top portion of the frame; and - a second silicon layer comprising a bottom portion of the frame, wherein the bottom portion of the frame is defined by an opening defined by a sidewall, characterized by - the sidewall being substantially orthogonal to the boss, - a third silicon layer arranged between the first and second silicon layers (12, 1), - a first etch-stop layer comprising silicon dioxide and arranged between the third and second silicon layers (13, 1), - wherein the sidewall of the opening in the bottom portion of the frame extends through both the second silicon layer and the first etch-stop layer up to the third silicon layer, and - a second etch-stop layer comprising silicone dioxide and arranged between the first and third silicon layers (12, 13), - wherein each trench extends through both the first silicon layer and the second etch-stop layer up to the third silicon layer. - a first silicon layer comprising: - a top portion of a frame; - a boss; and - trenches defining both a plurality of beams and the boss, wherein the plurality of beams connects the boss to the top portion of the frame; and - a second silicon layer comprising a bottom portion of the frame, wherein the bottom portion of the frame is defined by an opening defined by a sidewall, characterized by - the sidewall being substantially orthogonal to the boss, - a third silicon layer arranged between the first and second silicon layers (12, 1), - a first etch-stop layer comprising silicon dioxide and arranged between the third and second silicon layers (13, 1), - wherein the sidewall of the opening in the bottom portion of the frame extends through both the second silicon layer and the first etch-stop layer up to the third silicon layer, and - a second etch-stop layer comprising silicone dioxide and arranged between the first and third silicon layers (12, 13), - wherein each trench extends through both the first silicon layer and the second etch-stop layer up to the third silicon layer. - a top portion of a frame; - a boss; and - trenches defining both a plurality of beams and the boss, wherein the plurality of beams connects the boss to the top portion of the frame; and - a second silicon layer comprising a bottom portion of the frame, wherein the bottom portion of the frame is defined by an opening defined by a sidewall, - the sidewall being substantially orthogonal to the boss, - a third silicon layer arranged between the first and second silicon layers (12, 1), - a first etch-stop layer comprising silicon dioxide and arranged between the third and second silicon layers (13, 1), - wherein the sidewall of the opening in the bottom portion of the frame extends through both the second silicon layer and the first etch-stop layer up to the third silicon layer, and - a second etch-stop layer comprising silicone dioxide and arranged between the first and third silicon layers (12, 13), - wherein each trench extends through both the first silicon layer and the second etch-stop layer up to the third silicon layer.