A light emitting device package comprising: a substrate comprising a first cavity having a first depth and a second cavity having a second depth recessed from the bottom surface of the first cavity; a first electrode layer and a second electrode layer on the substrate, the first and second electrode layers (11, 12) being electrically isolated from each other; a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers (11, 12), wherein the light emitting diode comprises a support layer having conductivity, a light emitting layer on the support layer, and an electrode layer on the light emitting layer, wherein the light emitting layer includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, wherein the support layer contacts the first electrode layer and is electrically connected to the first electrode layer, wherein the support layer is formed of a conductive material to electrically connect the first electrode layer to the light emitting layer, wherein the electrode layer on the light emitting layer is electrically connected to the second electrode layer through a wire, wherein the first cavity has a first area and the first depth and the second cavity has a second area less than the first area and a second depth recessed from the bottom surface of the first cavity by a depth less than the first depth, wherein the first electrode layer is disposed on a top surface of the substrate, the lateral surface of the first cavity, the bottom surface of the first cavity, the lateral surface of the second cavity, and the bottom surface of the second cavity, and wherein the second electrode layer is disposed an a top surface of the substrate, a lateral surface of the first cavity, and the bottom surface of the first cavity, characterised in that a reflective layer is disposed between the support layer 820) and the light emitting layer, the support layer of the light emitting diode has a thickness greater than the depth of the second cavity, a portion of the light emitting diode protrudes outwardly from the second cavity, a lower surface of the light emitting layer is disposed at a position higher than the bottom surface of the first cavity, and a distance between the support layer of the light emitting diode and a lateral surface of the second cavity is in a range of 2.5 μm to 50 μm. a substrate comprising a first cavity having a first depth and a second cavity having a second depth recessed from the bottom surface of the first cavity; a first electrode layer and a second electrode layer on the substrate, the first and second electrode layers (11, 12) being electrically isolated from each other; a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers (11, 12), wherein the light emitting diode comprises a support layer having conductivity, a light emitting layer on the support layer, and an electrode layer on the light emitting layer, wherein the light emitting layer includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, wherein the support layer contacts the first electrode layer and is electrically connected to the first electrode layer, wherein the support layer is formed of a conductive material to electrically connect the first electrode layer to the light emitting layer, wherein the electrode layer on the light emitting layer is electrically connected to the second electrode layer through a wire, wherein the first cavity has a first area and the first depth and the second cavity has a second area less than the first area and a second depth recessed from the bottom surface of the first cavity by a depth less than the first depth, wherein the first electrode layer is disposed on a top surface of the substrate, the lateral surface of the first cavity, the bottom surface of the first cavity, the lateral surface of the second cavity, and the bottom surface of the second cavity, and wherein the second electrode layer is disposed an a top surface of the substrate, a lateral surface of the first cavity, and the bottom surface of the first cavity,