A liquid crystal display device comprising: a first metal layer on a substrate; a first insulating layer on the first metal layer, the first insulating layer including a first opening exposing a part of a top side of the first metal layer; a second metal layer overlapping the first metal layer; a passivation layer disposed on the second metal layer; a second insulating layer disposed on the passivation layer, the second insulating layer including a second opening exposing a part of a top side of the second metal layer; a contact hole including the first opening and the second opening and exposing the part of the top side of the first metal layer and the part of the top side of the second metal layer; and a conductive layer in contact with the part of the top side of the first metal layer and the part of the top side of the second metal layer within the contact hole, wherein the liquid crystal display device further comprises a thin film transistor in a bezel area, the bezel area surrounding an active area and the thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode, wherein the first insulating layer is a gate insulating layer on the gate electrode, and the second insulating layer is a planarization layer configured to flatten an upper part of the thin film transistor, wherein the liquid crystal display device further comprises a driving thin film transistor in the active area, the driving thin film transistor configured to drive a pixel, and the driving thin film transistor including an active layer containing a semiconductor, wherein the first metal layer is on the same layer as the gate electrode, and the second metal layer is on the same layer as the source electrode and the drain electrode, characterised in that the passivation layer is disposed directly on the second metal layer, wherein a channel length of the active layer in the thin film transistor in the bezel area is longer than a channel length of the active layer in the driving thin film transistor, wherein the active layers of the thin film transistor in the bezel area and of the driving thin film transistor in the active area contain an oxide semiconductor, and wherein the first metal layer is extended from the gate electrode, and the second metal layer is extended from one of the source electrode and the drain electrode. a first metal layer on a substrate; a first insulating layer on the first metal layer, the first insulating layer including a first opening exposing a part of a top side of the first metal layer; a second metal layer overlapping the first metal layer; a passivation layer disposed on the second metal layer; a second insulating layer disposed on the passivation layer, the second insulating layer including a second opening exposing a part of a top side of the second metal layer; a contact hole including the first opening and the second opening and exposing the part of the top side of the first metal layer and the part of the top side of the second metal layer; and a conductive layer in contact with the part of the top side of the first metal layer and the part of the top side of the second metal layer within the contact hole, wherein the liquid crystal display device further comprises a thin film transistor in a bezel area, the bezel area surrounding an active area and the thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode, wherein the first insulating layer is a gate insulating layer on the gate electrode, and the second insulating layer is a planarization layer configured to flatten an upper part of the thin film transistor, wherein the liquid crystal display device further comprises a driving thin film transistor in the active area, the driving thin film transistor configured to drive a pixel, and the driving thin film transistor including an active layer containing a semiconductor, wherein the first metal layer is on the same layer as the gate electrode, and the second metal layer is on the same layer as the source electrode and the drain electrode, characterised in that the passivation layer is disposed directly on the second metal layer, wherein a channel length of the active layer in the thin film transistor in the bezel area is longer than a channel length of the active layer in the driving thin film transistor, wherein the active layers of the thin film transistor in the bezel area and of the driving thin film transistor in the active area contain an oxide semiconductor, and wherein the first metal layer is extended from the gate electrode, and the second metal layer is extended from one of the source electrode and the drain electrode.