A solid-state imaging device comprising: a pixel array including a plurality of pixels (pix), each pixel including a photoelectric conversion unit (101, 801); a transfer unit (102, 802) configured to transfer signal electric charges of the photoelectric conversion unit to a floating node; a reset unit (104, 804) configured to set an electric potential of the floating node to a reference electric potential; an amplifying unit (105, 805) configured to amplify a signal generated based on the signal electric charges transferred to the floating node; and a pixel additional circuit (110, 810, 1001, 1100) configured to process the signal electric charges transferred to the floating node or the signal amplified by the amplifying unit, characterized in that the photoelectric conversion unit, the transfer unit, and the floating node are disposed on a first substrate (pixA), and the pixel additional circuit is disposed on a second substrate (pixB), a first light shielding member is disposed on the first substrate, the first light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit, and a second light shielding member is disposed on the second substrate, the second light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit, wherein a part of the pixel additional circuit is located outside the projection region defined by vertically projecting the first light shielding member onto the second substrate side, the first light shielding member is configured to reduce light to enter a portion of the pixel additional circuit located within the projection region, and the second light shielding member is configured to reduce light to enter the part of the pixel additional circuit located outside the projection region. a pixel array including a plurality of pixels (pix), each pixel including a photoelectric conversion unit (101, 801); a transfer unit (102, 802) configured to transfer signal electric charges of the photoelectric conversion unit to a floating node; a reset unit (104, 804) configured to set an electric potential of the floating node to a reference electric potential; an amplifying unit (105, 805) configured to amplify a signal generated based on the signal electric charges transferred to the floating node; and a pixel additional circuit (110, 810, 1001, 1100) configured to process the signal electric charges transferred to the floating node or the signal amplified by the amplifying unit, characterized in that the photoelectric conversion unit, the transfer unit, and the floating node are disposed on a first substrate (pixA), and the pixel additional circuit is disposed on a second substrate (pixB), a first light shielding member is disposed on the first substrate, the first light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit, and a second light shielding member is disposed on the second substrate, the second light shielding member being configured to reduce light transmitted through the photoelectric conversion unit to enter the pixel additional circuit, wherein a part of the pixel additional circuit is located outside the projection region defined by vertically projecting the first light shielding member onto the second substrate side, the first light shielding member is configured to reduce light to enter a portion of the pixel additional circuit located within the projection region, and the second light shielding member is configured to reduce light to enter the part of the pixel additional circuit located outside the projection region.