An electrolytic copper foil having a first surface and a second surface (1 10b) opposite to the first surface, the electrolytic copper foil comprising: a first protective layer forming the first surface (1 10a); a second protective layer forming the second surface; and a copper film between the first and second protective layers (112, 113), wherein the copper film is formed such that a shiny surface and a matte surface is provided, wherein the shiny surface is in contact with the first protective layer and the matte surface is in contact with the second protective layer, wherein each of the first and second protective layers (112, 113) comprises a chromate, a difference between a thickness of a first oxygen-containing part at the first surface and a thickness of a second oxygen-containing part at the second surface is not more than 5.8 nm, characterized in that the thickness of the second oxygen-containing part is not less than 1.5 nm and less than 8.0 nm, the first oxygen-containing part is a portion of the first protective layer, which shows a concentration of oxygen component of not less than 10 atom%, the second oxygen-containing part is a portion of the second protective layer, which shows a concentration of oxygen component of not less than 10 atom%, the thickness of the first oxygen-containing part at the first surface is a SiO 2 conversion thickness of the portion of the first protective layer, the thickness of the second oxygen-containing part at the second surface is a SiO 2 conversion thickness of the portion of the second protective layer, and the SiO 2 conversion thicknesses of the portions of the first and second protective layers (112, 113) are obtained when the concentrations of oxygen component are measured from the first and second surfaces (110a, 11 0b), respectively, by means of PHI 700 model, an AES analysis apparatus provided by ULVAC-PHI Inc., as follows: - electron energy analyzer: CMA (Cylindrical Mirror Analyzer) - electron beam energy: 5 keV - target current: 10 nA - ion energy, Sputtering speed: 2 kV Ar, 60 Å/min (SiO 2 conversion) - ion beam spot size: 2×2 mm 2 - thickness of oxygen-containing part: depth at which oxygen concentration is measured by AES is obtained from sputtering etching time in accordance with the following formula (SiO 2 conversion method) SiO 2 conversion depth = sputtering etching time min × sputtering speed 60 Å / min wherein SiOz conversion depth of a point at which the measured oxygen concentration is 10 atom% is considered as the thickness of the oxygen-containing part. a first protective layer forming the first surface (1 10a); a second protective layer forming the second surface; and a copper film between the first and second protective layers (112, 113), wherein the copper film is formed such that a shiny surface and a matte surface is provided, wherein the shiny surface is in contact with the first protective layer and the matte surface is in contact with the second protective layer, wherein each of the first and second protective layers (112, 113) comprises a chromate, a difference between a thickness of a first oxygen-containing part at the first surface and a thickness of a second oxygen-containing part at the second surface is not more than 5.8 nm, characterized in that the thickness of the second oxygen-containing part is not less than 1.5 nm and less than 8.0 nm, the first oxygen-containing part is a portion of the first protective layer, which shows a concentration of oxygen component of not less than 10 atom%, the second oxygen-containing part is a portion of the second protective layer, which shows a concentration of oxygen component of not less than 10 atom%, the thickness of the first oxygen-containing part at the first surface is a SiO 2 conversion thickness of the portion of the first protective layer, the thickness of the second oxygen-containing part at the second surface is a SiO 2 conversion thickness of the portion of the second protective layer, and the SiO 2 conversion thicknesses of the portions of the first and second protective layers (112, 113) are obtained when the concentrations of oxygen component are measured from the first and second surfaces (110a, 11 0b), respectively, by means of PHI 700 model, an AES analysis apparatus provided by ULVAC-PHI Inc., as follows: - electron energy analyzer: CMA (Cylindrical Mirror Analyzer) - electron beam energy: 5 keV - target current: 10 nA - ion energy, Sputtering speed: 2 kV Ar, 60 Å/min (SiO 2 conversion) - ion beam spot size: 2×2 mm 2 - thickness of oxygen-containing part: depth at which oxygen concentration is measured by AES is obtained from sputtering etching time in accordance with the following formula (SiO 2 conversion method) SiO 2 conversion depth = sputtering etching time min × sputtering speed 60 Å / min - electron energy analyzer: CMA (Cylindrical Mirror Analyzer) - electron beam energy: 5 keV - target current: 10 nA - ion energy, Sputtering speed: 2 kV Ar, 60 Å/min (SiO 2 conversion) - ion beam spot size: 2×2 mm 2 - thickness of oxygen-containing part: depth at which oxygen concentration is measured by AES is obtained from sputtering etching time in accordance with the following formula (SiO 2 conversion method) SiO 2 conversion depth = sputtering etching time min × sputtering speed 60 Å / min wherein SiOz conversion depth of a point at which the measured oxygen concentration is 10 atom% is considered as the thickness of the oxygen-containing part.