Method for reading a demodulation pixel (1, 21) of a distance sensor for determining the distance from an object, for determining the difference between two charge quantities (11A, 11B) independently of the total magnitude of the charge quantities (11A, 11B), comprising the following method steps: • providing a demodulation pixel (1, 21) for receiving radiation, • converting the radiation received in a conversion region into photoinduced charge carriers, • partitioning the charge carriers according to a modulation frequency into at least two charge carrier quantities, • collecting the separated charge carrier quantities in each case in the potential well (3A, 3B) of one of at least two storage gates (2A, 2B), which are assigned in each case to the charge carrier quantities (11A, 11B), • closing off the at least two storage gates (2A, 2B) by way of in each case a potential hill (4A, 4B) of a transfer gate (5A, 5B) assigned to each of the storage gates (2A, 2B) as a lock for the charge carriers collected in the assigned storage gate (2A, 2B) from in each case an assigned floating diffusion (6A, 6B) for capturing the charge carriers that have been transferred by the respective transfer gate (5A, 5B) and for feeding the charge carriers as a voltage into an evaluation region, comprising: • applying a variable control voltage to the transfer gates (5A, 5B) for influencing the potential hill (4A, 4B) and • lowering the respective potential hills (4A, 4B) of the corresponding transfer gates (5A, 5B) before in each case charge carriers from the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B), wherein the well depth of the corresponding potential well (3A, 3B) of the assigned storage gate (2A, 2B) is reduced until in each case charge carriers from two of the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B), characterized in that the passage of the charge carriers to the respectively assigned floating diffusion (6A, 6B) is stopped as soon as in each case charge carriers from two of the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B) by the potential hill (4A, 4B) of the assigned transfer gates (5A, 5B) being increased again. • providing a demodulation pixel (1, 21) for receiving radiation, • converting the radiation received in a conversion region into photoinduced charge carriers, • partitioning the charge carriers according to a modulation frequency into at least two charge carrier quantities, • collecting the separated charge carrier quantities in each case in the potential well (3A, 3B) of one of at least two storage gates (2A, 2B), which are assigned in each case to the charge carrier quantities (11A, 11B), • closing off the at least two storage gates (2A, 2B) by way of in each case a potential hill (4A, 4B) of a transfer gate (5A, 5B) assigned to each of the storage gates (2A, 2B) as a lock for the charge carriers collected in the assigned storage gate (2A, 2B) from in each case an assigned floating diffusion (6A, 6B) for capturing the charge carriers that have been transferred by the respective transfer gate (5A, 5B) and for feeding the charge carriers as a voltage into an evaluation region, comprising: • applying a variable control voltage to the transfer gates (5A, 5B) for influencing the potential hill (4A, 4B) and • lowering the respective potential hills (4A, 4B) of the corresponding transfer gates (5A, 5B) before in each case charge carriers from the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B), wherein the well depth of the corresponding potential well (3A, 3B) of the assigned storage gate (2A, 2B) is reduced until in each case charge carriers from two of the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B), • applying a variable control voltage to the transfer gates (5A, 5B) for influencing the potential hill (4A, 4B) and • lowering the respective potential hills (4A, 4B) of the corresponding transfer gates (5A, 5B) before in each case charge carriers from the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B), wherein the well depth of the corresponding potential well (3A, 3B) of the assigned storage gate (2A, 2B) is reduced until in each case charge carriers from two of the storage gates (2A, 2B) can surmount the respective potential hill (4A, 4B) of the corresponding transfer gate (5A, 5B) and pass to the assigned floating diffusion (6A, 6B),