A vehicle light (300, 400, 500, 600, 700, 800), comprising: a semiconductor light emitting device (100, 200, 300) including a plurality of semiconductor light emitting elements (102, 220, 320) arranged in line and each having a light emitting surface and a wavelength conversion layer (103, 240, 340) configured to cover the light emitting surface of the semiconductor light emitting element (102, 220, 320), the wavelength conversion layer (103, 240, 340) having a thickness-decreased portion (244, 344) that is formed from or from around a center line of the light emitting surface to one end of the semiconductor light emitting element (102, 220, 320) so that the thickness thereof is reduced from or from around the center portion toward the one end of the semiconductor light emitting element (102, 220, 320), the thickness-decreased portions (244, 344) of the plurality of semiconductor light emitting elements (102, 220, 320) being arranged on a longer side of the semiconductor light emitting device (100, 200, 300); and a projection optical system (410, 510, 610, 710, 720, 730, 810, 820) configured to form a cutoff line including at least one of a horizontal cutoff line and an oblique cutoff line in a light distribution, by projecting a plurality of light source images each including an image portion (P1') corresponding to the thickness-decreased portion (244, 344) at its upper area, and arranging the image portions (P1') in at least one of a horizontal direction and an oblique direction; characterized in that the thickness-decreased portions are formed on the same side of the plurality of semiconductor light emitting elements, and the wavelength conversion layer has a thickness-uniform portion formed on the opposite side of the semiconductor light emitting element to the side where the thickness-decreased portion is formed, the thickness-uniform portion ranging from the center line or from near the center line to the other end of the semiconductor light emitting element opposite to the one end of the semiconductor light emitting element. a semiconductor light emitting device (100, 200, 300) including a plurality of semiconductor light emitting elements (102, 220, 320) arranged in line and each having a light emitting surface and a wavelength conversion layer (103, 240, 340) configured to cover the light emitting surface of the semiconductor light emitting element (102, 220, 320), the wavelength conversion layer (103, 240, 340) having a thickness-decreased portion (244, 344) that is formed from or from around a center line of the light emitting surface to one end of the semiconductor light emitting element (102, 220, 320) so that the thickness thereof is reduced from or from around the center portion toward the one end of the semiconductor light emitting element (102, 220, 320), the thickness-decreased portions (244, 344) of the plurality of semiconductor light emitting elements (102, 220, 320) being arranged on a longer side of the semiconductor light emitting device (100, 200, 300); and a projection optical system (410, 510, 610, 710, 720, 730, 810, 820) configured to form a cutoff line including at least one of a horizontal cutoff line and an oblique cutoff line in a light distribution, by projecting a plurality of light source images each including an image portion (P1') corresponding to the thickness-decreased portion (244, 344) at its upper area, and arranging the image portions (P1') in at least one of a horizontal direction and an oblique direction; characterized in that the thickness-decreased portions are formed on the same side of the plurality of semiconductor light emitting elements, and the wavelength conversion layer has a thickness-uniform portion formed on the opposite side of the semiconductor light emitting element to the side where the thickness-decreased portion is formed, the thickness-uniform portion ranging from the center line or from near the center line to the other end of the semiconductor light emitting element opposite to the one end of the semiconductor light emitting element.