A transistor having interdigitated drain and source finger electrodes (220, 320, 420, 520, 210, 310), said transistor comprising: a gate region (109, 209, 309, 409, 509) between said interdigitated drain and source finger electrodes (220, 320, 420, 520, 210, 310); each of said interdigitated drain finger electrodes (220, 320, 420, 520) being a drain finger electrode with a curved drain finger electrode end (226, 326, 426, 526), said curved drain finger electrode end (226, 326, 426, 526) being surrounded by said gate region (109, 209, 309, 409, 509) and having an increased radius of curvature: wherein said increased radius of curvature of said curved drain finger electrode end (226, 326, 426, 526) is greater than a radius of curvature of a circle having a diameter equal to a width of said drain finger electrode (220, 320, 420, 520) just before the transition to said curved drain finger electrode end (226, 326, 426, 526) characterized in that each of said interdigitated source finger electrodes (210, 310) comprises a source finger electrode beginning coupled to a source pad (104, 204), and a source finger electrode end; wherein said curved drain finger electrode end (226, 326, 426, 526) is extended beyond said source finger electrode beginning so as to terminate between said source finger electrode beginning and said source pad (104, 204). a gate region (109, 209, 309, 409, 509) between said interdigitated drain and source finger electrodes (220, 320, 420, 520, 210, 310); each of said interdigitated drain finger electrodes (220, 320, 420, 520) being a drain finger electrode with a curved drain finger electrode end (226, 326, 426, 526), said curved drain finger electrode end (226, 326, 426, 526) being surrounded by said gate region (109, 209, 309, 409, 509) and having an increased radius of curvature: wherein said increased radius of curvature of said curved drain finger electrode end (226, 326, 426, 526) is greater than a radius of curvature of a circle having a diameter equal to a width of said drain finger electrode (220, 320, 420, 520) just before the transition to said curved drain finger electrode end (226, 326, 426, 526) characterized in that each of said interdigitated source finger electrodes (210, 310) comprises a source finger electrode beginning coupled to a source pad (104, 204), and a source finger electrode end; wherein said curved drain finger electrode end (226, 326, 426, 526) is extended beyond said source finger electrode beginning so as to terminate between said source finger electrode beginning and said source pad (104, 204). wherein said increased radius of curvature of said curved drain finger electrode end (226, 326, 426, 526) is greater than a radius of curvature of a circle having a diameter equal to a width of said drain finger electrode (220, 320, 420, 520) just before the transition to said curved drain finger electrode end (226, 326, 426, 526) characterized in that each of said interdigitated source finger electrodes (210, 310) comprises a source finger electrode beginning coupled to a source pad (104, 204), and a source finger electrode end; wherein said curved drain finger electrode end (226, 326, 426, 526) is extended beyond said source finger electrode beginning so as to terminate between said source finger electrode beginning and said source pad (104, 204).