A semiconductor light-emitting device comprising: a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer sandwiched between a p-type cladding layer and an n-type cladding layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; characterized in that: a protrusion is provided in a part of a second major surface side of the first semiconductor layer and includes an interface between the first semiconductor layer and the second semiconductor layer, an insulating film is provided on a side surface of the second semiconductor layer, and an edge of the interface between the first semiconductor layer and the second semiconductor layer; and a metal film is provided on the insulating film from the second electrode side toward the edge of the interface, the metal film being reflective to light emitted by the light-emitting layer, wherein the insulating film and the metal film continuously cover the periphery of the side surface of the second semiconductor layer and the side surface of the protrusion including the edge of the interface between the first semiconductor layer and the second semiconductor layer, and the metal film covers the side surface of the protrusion via the insulating film, a first interconnect is connected to the first electrode, a second interconnect is connected to the second electrode, a first metal pillar is provided on the first interconnect, a second metal pillar is provided on the second interconnect, a resin is provided on a periphery of the first metal pillar, a periphery of the second metal pillar, the first interconnect, and the second interconnect, a phosphor layer is provided on the first major surface side without a substrate between the first major surface and the phosphor layer, and an insulating layer provided on the second major surface of the first semiconductor layer so as to cover the insulating film, the first electrode, the second electrode and the metal film. a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer sandwiched between a p-type cladding layer and an n-type cladding layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; a protrusion is provided in a part of a second major surface side of the first semiconductor layer and includes an interface between the first semiconductor layer and the second semiconductor layer, an insulating film is provided on a side surface of the second semiconductor layer, and an edge of the interface between the first semiconductor layer and the second semiconductor layer; and a metal film is provided on the insulating film from the second electrode side toward the edge of the interface, the metal film being reflective to light emitted by the light-emitting layer, wherein the insulating film and the metal film continuously cover the periphery of the side surface of the second semiconductor layer and the side surface of the protrusion including the edge of the interface between the first semiconductor layer and the second semiconductor layer, and the metal film covers the side surface of the protrusion via the insulating film, a first interconnect is connected to the first electrode, a second interconnect is connected to the second electrode, a first metal pillar is provided on the first interconnect, a second metal pillar is provided on the second interconnect, a resin is provided on a periphery of the first metal pillar, a periphery of the second metal pillar, the first interconnect, and the second interconnect, a phosphor layer is provided on the first major surface side without a substrate between the first major surface and the phosphor layer, and an insulating layer provided on the second major surface of the first semiconductor layer so as to cover the insulating film, the first electrode, the second electrode and the metal film.