Method for producing a photovoltaic solar cell comprising a front face designed for coupling-in light, said method comprising the following steps: A. producing a plurality of cut outs in a base-doping-type semiconductor substrate, B. producing one or more emitter-doping-type emitter regions at least on the front face of the semiconductor substrate, the emitter-doping type being the opposite of the base-doping type, C. applying an electrically insulating insulation layer and D. producing metal through-conducting structures in the cut outs, producing at least one metal base contact structure (8, 8') on the rear face of the solar cell, which structure is electrically conductively connected to the semiconductor substrate in a base-doping region, producing at least one metal front-face contact structure on the front face of the solar cell which is electrically conductively connected to the emitter region and the metal through-conducting structure on the front face of the semiconductor substrate, and producing at least one rear-face contact structure on the rear face of the solar cell, which is electrically conductively connected to the through-conducting structure, in method step B, an emitter-doping-type through-conducting emitter region, which extends from the front face to the rear face, being additionally formed in each case in the semiconductor substrate on the walls of the cut outs, in method step C, the insulation layer being applied so as to cover the rear face of the semiconductor substrate, optionally additional intermediate layers, in method step D - the base contact structure (8, 8') being applied to the insulation layer, optionally to additional intermediate layers, in such a way that the base contact structure (8, 8') penetrates the insulation layer at least in regions, and so an electrically conductive connection is produced between the base contact structure (8, 8') and the semiconductor substrate, an emitter region extending in parallel with the rear face not being formed on the rear face of the semiconductor substrate adjacent to the cut outs, except in the region in which the through-conducting emitter region meets the rear face of the semiconductor substrate, and in method step D the rear-face contact structure being applied to the insulation layer, optionally to additional intermediate layers, in such a way that the rear-face contact structure extends over regions of the semiconductor substrate having base doping, and in these regions electrical insulation being formed between the rear-face contact structure and the semiconductor substrate, at least on account of the insulation layer placed therebetween, characterised in that prior to method step B, optionally by inserting additional intermediate steps, in a method step A0, a diffusion barrier layer is applied so as to completely cover the rear face of the semiconductor substrate in order to prevent diffusion of emitter-doping material through the diffusion barrier layer, and in that method step A0 is carried out prior to method step A, optionally by inserting additional intermediate steps, and in that the diffusion barrier layer is additionally formed as an electrically insulating layer, and in that the diffusion barrier layer is not removed in the method steps following method step A0. A. producing a plurality of cut outs in a base-doping-type semiconductor substrate, B. producing one or more emitter-doping-type emitter regions at least on the front face of the semiconductor substrate, the emitter-doping type being the opposite of the base-doping type, C. applying an electrically insulating insulation layer and D. producing metal through-conducting structures in the cut outs, producing at least one metal base contact structure (8, 8') on the rear face of the solar cell, which structure is electrically conductively connected to the semiconductor substrate in a base-doping region, producing at least one metal front-face contact structure on the front face of the solar cell which is electrically conductively connected to the emitter region and the metal through-conducting structure on the front face of the semiconductor substrate, and producing at least one rear-face contact structure on the rear face of the solar cell, which is electrically conductively connected to the through-conducting structure, - the base contact structure (8, 8') being applied to the insulation layer, optionally to additional intermediate layers, in such a way that the base contact structure (8, 8') penetrates the insulation layer at least in regions, and so an electrically conductive connection is produced between the base contact structure (8, 8') and the semiconductor substrate,