Method of manufacturing a hetero-junction solar cell, the solar cell comprising a front side for an incidence of light into the solar cell and a back side opposite to the front side, the method including the steps of - providing an n-doped and textured semiconductor substrate, said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate; - forming at least one front layer on the front surface of the semiconductor substrate, said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one front layer is p-doped; - forming at least one back layer on the back surface of the semiconductor substrate, said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one back layer is n-doped; - forming an electrically conductive anti-reflection coating on the at least one front layer, said anti-reflection coating being at least partially transparent to the light irradiating into the solar cell; - forming an electrically conductive back coating on the at least one back layer; and - forming a front grid metallization on the anti-reflection coating; wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate, leaving a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating, wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating, characterized in that the at least one front layer is formed prior to forming of the at least one back layer, the at least one back layer overlaps the at least one front layer and the electrically conductive anti-reflection coating covers the whole surface of the at least one front layer. - providing an n-doped and textured semiconductor substrate, said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate; - forming at least one front layer on the front surface of the semiconductor substrate, said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one front layer is p-doped; - forming at least one back layer on the back surface of the semiconductor substrate, said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase, wherein said at least one back layer is n-doped; - forming an electrically conductive anti-reflection coating on the at least one front layer, said anti-reflection coating being at least partially transparent to the light irradiating into the solar cell; - forming an electrically conductive back coating on the at least one back layer; and - forming a front grid metallization on the anti-reflection coating; wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate, leaving a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating, wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating, characterized in that the at least one front layer is formed prior to forming of the at least one back layer,