A semiconductor light emitting apparatus, comprising: a first semiconductor layer of n-type; a light emitting layer formed on the first semiconductor layer; a second semiconductor layer of p-type, formed on the light emitting layer and having an upper surface; a recess formed from the upper surface of the second semiconductor layer, penetrating through the second semiconductor layer and the light emitting layer and exposing the first semiconductor layer at the bottom; a first electrode (En) electrically connected to the first semiconductor layer at the bottom of the recess and extending upward to extend above the upper surface of the second semiconductor layer; a second electrode (Ep) electrically connected to the upper surface of the second semiconductor layer and having an opening, defined by an inner edge of the second electrode (Ep), which surrounds the recess in plan view and through which the first electrode (En) extends; and an insulating layer disposed between the first and second electrodes (En, Ep) above the upper surface of the second semiconductor layer; wherein the second electrode (Ep) constitutes a reflective electrode that reflects light incident from the light emitting layer side, wherein the first electrode (En) includes a reflective electrode layer formed above the second electrode (Ep) and covering the opening in plan view, the reflective electrode layer reflecting light incident from the light emitting layer side, wherein the reflective electrode layer has an outer peripheral portion overlapping an inner peripheral portion of the second electrode (Ep) defining the opening in plan view; wherein the first electrode (En) further includes an n-side cap layer formed on the reflective electrode layer and having a lower reflectance against incident light from the light emitting layer side than that of the reflective electrode layer, and wherein the n-side cap layer extends above an area further outside than the outer peripheral portion of the reflective electrode layer in plan view. a first semiconductor layer of n-type; a light emitting layer formed on the first semiconductor layer; a second semiconductor layer of p-type, formed on the light emitting layer and having an upper surface; a recess formed from the upper surface of the second semiconductor layer, penetrating through the second semiconductor layer and the light emitting layer and exposing the first semiconductor layer at the bottom; a first electrode (En) electrically connected to the first semiconductor layer at the bottom of the recess and extending upward to extend above the upper surface of the second semiconductor layer; a second electrode (Ep) electrically connected to the upper surface of the second semiconductor layer and having an opening, defined by an inner edge of the second electrode (Ep), which surrounds the recess in plan view and through which the first electrode (En) extends; and an insulating layer disposed between the first and second electrodes (En, Ep) above the upper surface of the second semiconductor layer; wherein the second electrode (Ep) constitutes a reflective electrode that reflects light incident from the light emitting layer side, wherein the first electrode (En) includes a reflective electrode layer formed above the second electrode (Ep) and covering the opening in plan view, the reflective electrode layer reflecting light incident from the light emitting layer side, wherein the reflective electrode layer has an outer peripheral portion overlapping an inner peripheral portion of the second electrode (Ep) defining the opening in plan view; wherein the first electrode (En) further includes an n-side cap layer formed on the reflective electrode layer and having a lower reflectance against incident light from the light emitting layer side than that of the reflective electrode layer, and wherein the n-side cap layer extends above an area further outside than the outer peripheral portion of the reflective electrode layer in plan view.