A method for forming an electrically conductive oxide film on a substrate by a plurality of deposition cycles, the method comprising the steps of, bringing the substrate into a reaction space, forming a preliminary deposit on a deposition surface of the substrate and treating the deposition surface with a chemical, characterized in that each deposition cycle comprises the steps of forming a preliminary deposit on a deposition surface of the substrate and treating the deposition surface with a chemical, and in that the step of forming the preliminary deposit on the deposition surface of the substrate comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space, and the step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical comprising first metal such that at least a portion of the organometallic chemical reacts with at least part of the preliminary deposit and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal; the formed preliminary deposit of the transition metal oxide being less than a full monolayer in one deposition cycle, the steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film of electrically conductive oxide is formed on the substrate, and in that forming the preliminary deposit of transition metal oxide comprises the steps of, a) exposing the deposition surface of the substrate to an oxygen-containing chemical such that at least a portion of the oxygen containing chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and b) exposing the deposition surface of the substrate to a transition metal chemical such that at least a portion of the transition metal chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and treating the deposition surface with an organometallic chemical comprises c) exposing the deposition surface of the substrate to an organometallic chemical such that at least a portion of the organometallic chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and in that the steps a), b), and c) are carried out in the order, first a), then b), then c), then b) again, and this sequence is repeated one or more times to increase the thickness of the film, or in that the steps a), b), and c) are carried out in the order, first a) and then b), this sequence is repeated one or more times, after which step c) is carried out, and in that the transition metal chemical is a transition metal chloride selected from the group of titanium trichloride, titanium tetrachloride, zirconium tetrachloride, hafnium tetrachloride, niobium pentachloride, tantalum pentachloride, molybdenum pentachloride, and tungsten hexachloride. a) exposing the deposition surface of the substrate to an oxygen-containing chemical such that at least a portion of the oxygen containing chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and b) exposing the deposition surface of the substrate to a transition metal chemical such that at least a portion of the transition metal chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and c) exposing the deposition surface of the substrate to an organometallic chemical such that at least a portion of the organometallic chemical gets adsorbed onto the deposition surface, and subsequently purging the reaction space, and