An RF switch circuit for switching RF signals, comprising: (a) a first input port receiving a first RF input signal (RF 1); (b) a second input port receiving a second RF input signal (RF 2); (c) an RF common port; (d) a first switch transistor grouping comprising a plurality of MOSFETs connected in a serial configuration, one end of the serial configuration being a first node coupled to the first input port, the opposite end of the serial configuration being a second node coupled to the RF common port, the first switch transistor grouping having an input node that is driven by a switch control signal and is coupled to a gate of each of the plurality of MOSFETs of the grouping via a corresponding gate resistor (R 33A, R 33B, R 33C); (e) a second switch transistor grouping comprising a plurality of MOSFETs connected in a serial configuration, one end of the serial configuration being a first node coupled to the second input port, the opposite end of the serial configuration being a second node coupled to the RF common port, the second switch transistor grouping having an input node that is driven by an inverse (SW_) of the switch control signal and is coupled to a gate of each of the plurality of MOSFETs of the grouping via a corresponding gate resistor (R 34A, R 34B, R 34C); (f) a first shunt transistor grouping comprising one or more MOSFETs connected together in a serial configuration, one end of the serial configuration being a first node coupled to the second input port, the opposite end of the serial configuration being a second node coupled to ground, the first shunt transistor grouping having an input node that is driven by the switch control signal and is coupled to a gate of each of the one or more MOSFETs of the grouping via a corresponding gate resistor (R 38A, R 38B, R 38C); and (g) a second shunt transistor grouping comprising one or more MOSFETs connected together in a serial configuration, one end of the serial configuration being a first node coupled to the first input port, the opposite end of the serial configuration being a second node coupled to ground, the second shunt transistor grouping having an input node that is driven by the inverse (SW_) of the switch control signal and is coupled to a gate of each of the one or more MOSFETs of the grouping via a corresponding gate resistor (R 37A, R 37B, R 37C); wherein, when the switch control signal is enabled, the first switch and shunt transistor groupings (33, 38) are enabled while the second switch and shunt transistor groupings (34, 37) are disabled, thereby passing the first RF input signal through to the RF common port and shunting the second RF input signal to ground; and wherein when the switch control signal is disabled, the second switch and shunt transistor groupings (34, 37) are enabled while the first switch and shunt transistor groupings (33, 38) are disabled, thereby passing the second RF input signal through to the RF common port and shunting the first RF input signal to ground; wherein each RF signal has a corresponding frequency, each MOSFET has a corresponding gate capacitance, which forms with the gate resistor of each MOSFET in the serial configuration an RC time constant, which is much longer compared to a period of the corresponding signal switched by the transistor groupings. (a) a first input port receiving a first RF input signal (RF 1); (b) a second input port receiving a second RF input signal (RF 2); (c) an RF common port; (d) a first switch transistor grouping comprising a plurality of MOSFETs connected in a serial configuration, one end of the serial configuration being a first node coupled to the first input port, the opposite end of the serial configuration being a second node coupled to the RF common port, the first switch transistor grouping having an input node that is driven by a switch control signal and is coupled to a gate of each of the plurality of MOSFETs of the grouping via a corresponding gate resistor (R 33A, R 33B, R 33C); (e) a second switch transistor grouping comprising a plurality of MOSFETs connected in a serial configuration, one end of the serial configuration being a first node coupled to the second input port, the opposite end of the serial configuration being a second node coupled to the RF common port, the second switch transistor grouping having an input node that is driven by an inverse (SW_) of the switch control signal and is coupled to a gate of each of the plurality of MOSFETs of the grouping via a corresponding gate resistor (R 34A, R 34B, R 34C); (f) a first shunt transistor grouping comprising one or more MOSFETs connected together in a serial configuration, one end of the serial configuration being a first node coupled to the second input port, the opposite end of the serial configuration being a second node coupled to ground, the first shunt transistor grouping having an input node that is driven by the switch control signal and is coupled to a gate of each of the one or more MOSFETs of the grouping via a corresponding gate resistor (R 38A, R 38B, R 38C); and (g) a second shunt transistor grouping comprising one or more MOSFETs connected together in a serial configuration, one end of the serial configuration being a first node coupled to the first input port, the opposite end of the serial configuration being a second node coupled to ground, the second shunt transistor grouping having an input node that is driven by the inverse (SW_) of the switch control signal and is coupled to a gate of each of the one or more MOSFETs of the grouping via a corresponding gate resistor (R 37A, R 37B, R 37C);