A module comprising - a first module connection and a second module connection, - an energy store, and - a first electrical switch and a second electrical switch, wherein a switchable bypass device is arranged between the first module connection and the second module connection, wherein - the switchable bypass device is configured to remain in a bidirectional current conducting state in response to a single trigger pulse, - the switchable bypass device in the bidirectional current conducting state forms an electrical bypass between the first module connection and the second module connection bypassing the energy store and the first and second switches (101, 102), - the switchable bypass device comprises a semiconductor body extending between a first main surface and a second main surface, - wherein the switchable bypass device comprises a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, - the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, - the first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the switchable bypass device, - the semiconductor body is configured with respect to a charge carrier recombination lifetime such that the switchable bypass device does not turn off in response to a change in a polarity of a voltage between the first main electrode and the second main electrode, and - a turn-off of the switchable bypass device occurs if the switchable bypass device is brought below its holding current. - a first module connection and a second module connection, - an energy store, and - a first electrical switch and a second electrical switch, wherein a switchable bypass device is arranged between the first module connection and the second module connection, wherein - the switchable bypass device is configured to remain in a bidirectional current conducting state in response to a single trigger pulse, - the switchable bypass device in the bidirectional current conducting state forms an electrical bypass between the first module connection and the second module connection bypassing the energy store and the first and second switches (101, 102), - the switchable bypass device comprises a semiconductor body extending between a first main surface and a second main surface, - wherein the switchable bypass device comprises a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, - the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, - the first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the switchable bypass device, - the semiconductor body is configured with respect to a charge carrier recombination lifetime such that the switchable bypass device does not turn off in response to a change in a polarity of a voltage between the first main electrode and the second main electrode, and - a turn-off of the switchable bypass device occurs if the switchable bypass device is brought below its holding current. - the switchable bypass device is configured to remain in a bidirectional current conducting state in response to a single trigger pulse, - the switchable bypass device in the bidirectional current conducting state forms an electrical bypass between the first module connection and the second module connection bypassing the energy store and the first and second switches (101, 102), - the switchable bypass device comprises a semiconductor body extending between a first main surface and a second main surface, - wherein the switchable bypass device comprises a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, - the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, - the first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the switchable bypass device, - the semiconductor body is configured with respect to a charge carrier recombination lifetime such that the switchable bypass device does not turn off in response to a change in a polarity of a voltage between the first main electrode and the second main electrode, and - a turn-off of the switchable bypass device occurs if the switchable bypass device is brought below its holding current.