An organic transistor array comprising a plurality of organic thin film transistors 10 wherein each organic thin film transistor 10 is formed from components including a substrate, a gate electrode, a ground electrode, a gate insulator layer, a source electrode, and a drain electrode, such that the organic transistor array comprises: a plurality of said gate electrodes and a plurality of said ground electrodes formed at the same layer provided on said substrate surface at a predetermined distance from each other; said gate insulator layer (14,34) formed to cover said plurality of gate electrodes and said plurality of ground electrodes; a plurality of said source electrodes and a plurality of said drain electrodes formed at the same layer provided above the plurality of gate electrodes via the gate insulator layer (14,34), wherein the source electrodes and the drain electrodes are formed on the gate insulator layer (14, 34) at a predetermined distance from each other; characterized in that the components forming each organic thin film transistor further include an organic semiconductor layer, such that the organic transistor array further comprises a plurality of said organic semiconductor layers opposing the plurality of gate electrodes via the gate insulator layer (14,34), each formed so as to provide a channel region between mutually adjacent source and drain electrodes, wherein in a plan view viewed in a direction perpendicular to the substrate surface the gate and ground electrodes are provided along a first direction and are arranged alternately, wherein the source electrodes are arranged along a second direction perpendicular to the first direction and wherein the plurality of drain electrodes have a hexagonal island structure in the plan view and are positioned between the source electrodes, wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections each forming a single pixel, and each of the sections has a hexagonal shape with a geometrically closest packed structure in the plan view. a plurality of said gate electrodes and a plurality of said ground electrodes formed at the same layer provided on said substrate surface at a predetermined distance from each other; said gate insulator layer (14,34) formed to cover said plurality of gate electrodes and said plurality of ground electrodes; a plurality of said source electrodes and a plurality of said drain electrodes formed at the same layer provided above the plurality of gate electrodes via the gate insulator layer (14,34), wherein the source electrodes and the drain electrodes are formed on the gate insulator layer (14, 34) at a predetermined distance from each other; characterized in that the components forming each organic thin film transistor further include an organic semiconductor layer, such that the organic transistor array further comprises a plurality of said organic semiconductor layers opposing the plurality of gate electrodes via the gate insulator layer (14,34), each formed so as to provide a channel region between mutually adjacent source and drain electrodes, wherein in a plan view viewed in a direction perpendicular to the substrate surface the gate and ground electrodes are provided along a first direction and are arranged alternately, wherein the source electrodes are arranged along a second direction perpendicular to the first direction and wherein the plurality of drain electrodes have a hexagonal island structure in the plan view and are positioned between the source electrodes, wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections each forming a single pixel, and each of the sections has a hexagonal shape with a geometrically closest packed structure in the plan view.