A storage element comprising a storage element, the storage element comprising: a layered construction including a storage layer with a thickness of 1.5 nm that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer, comprising three layers, the first layer connected to an insulating layer made of CoFeB with a thickness of 2 nm, the second layer between first and third layer made of Ru with a thickness of 0.8 nm and the third layer connected to a base layer made of CoPt with a thickness of 2 nm, that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and the insulating layer made of MgO with a thickness of 0.9 nm that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer, the base layer comprising two layers, the first layer connected to the pinned magnetization layer made of Ru with a thickness of 25 nm and the second layer connected to the first layer made of Ta with a thickness of 10.0 nm, a cap layer, comprising three layers, the first layer made of Ta with a thickness of 3 nm, the second layer between first and third layer made of Ru with a thickness of 3 nm and the third layer connected to the storage layer made of Ta with a thickness of 3 nm,wherein recording of information in the storage layer is carried out by changing the direction of magnetization of the storage layer by injecting spin-polarized electrons in a laminating direction of the layered construction, wherein the pinned magnetization layer has a laminated ferri-pinned construction composed of at least two ferromagnetic layers and a non-magnetic layer, wherein a magnetic material in the pinned magnetization layer that contacts the insulating layer is configured using a CoFeB magnetic layer, and wherein a magnetic material in the layer that does not contact the insulating layer is an alloy using at least one type of each of a Pt group metal element and a ferromagnetic 3d transition metal element that is a ferromagnetic element out of 3d transition metal elements, and an atomic concentration of the Pt group metal element is lower than an atomic concentration of the ferromagnetic 3d transition metal element. a layered construction including a storage layer with a thickness of 1.5 nm that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer, comprising three layers, the first layer connected to an insulating layer made of CoFeB with a thickness of 2 nm, the second layer between first and third layer made of Ru with a thickness of 0.8 nm and the third layer connected to a base layer made of CoPt with a thickness of 2 nm, that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and the insulating layer made of MgO with a thickness of 0.9 nm that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer, the base layer comprising two layers, the first layer connected to the pinned magnetization layer made of Ru with a thickness of 25 nm and the second layer connected to the first layer made of Ta with a thickness of 10.0 nm, a cap layer, comprising three layers, the first layer made of Ta with a thickness of 3 nm, the second layer between first and third layer made of Ru with a thickness of 3 nm and the third layer connected to the storage layer made of Ta with a thickness of 3 nm,wherein recording of information in the storage layer is carried out by changing the direction of magnetization of the storage layer by injecting spin-polarized electrons in a laminating direction of the layered construction, wherein the pinned magnetization layer has a laminated ferri-pinned construction composed of at least two ferromagnetic layers and a non-magnetic layer, wherein a magnetic material in the pinned magnetization layer that contacts the insulating layer is configured using a CoFeB magnetic layer, and wherein a magnetic material in the layer that does not contact the insulating layer is an alloy using at least one type of each of a Pt group metal element and a ferromagnetic 3d transition metal element that is a ferromagnetic element out of 3d transition metal elements, and an atomic concentration of the Pt group metal element is lower than an atomic concentration of the ferromagnetic 3d transition metal element.