A capacitor structure comprising: a first layer; a second layer above the first layer and insulated from the first layer; a third layer above the second layer and insulated from the second layer; the first layer comprising: first layer metal traces (506, 510) positioned according to a design parameter having a first value for the first layer; and wherein: the first layer metal traces (506, 510) are arranged such that they have alternating polarities; the second layer comprising: second layer metal traces (806, 810) positioned according to a second value for the design parameter for the second layer, the second value different than the first value; and wherein: the second layer metal traces (806, 810) run in a different direction than the first layer metal traces (506, 510); and the second layer metal traces (806, 810) are arranged such that they have alternating polarities; the third layer comprising: third layer metal traces (902, 904) also positioned according to the second value for the design parameter; and wherein: the third layer metal traces (902, 904) run in a same direction as the second layer metal traces (806, 810); the third layer metal traces (902, 904) are arranged such that they have alternating polarities and overlap with the second layer metal traces (806, 810) of different polarity; wherein the design parameter comprises pitch, metal width, or metal spacing. a first layer; a second layer above the first layer and insulated from the first layer; a third layer above the second layer and insulated from the second layer; the first layer comprising: first layer metal traces (506, 510) positioned according to a design parameter having a first value for the first layer; and wherein: the first layer metal traces (506, 510) are arranged such that they have alternating polarities; the second layer comprising: second layer metal traces (806, 810) positioned according to a second value for the design parameter for the second layer, the second value different than the first value; and wherein: the second layer metal traces (806, 810) run in a different direction than the first layer metal traces (506, 510); and the second layer metal traces (806, 810) are arranged such that they have alternating polarities; the second layer metal traces (806, 810) run in a different direction than the first layer metal traces (506, 510); and the second layer metal traces (806, 810) are arranged such that they have alternating polarities; the third layer comprising: third layer metal traces (902, 904) also positioned according to the second value for the design parameter; and wherein: the third layer metal traces (902, 904) run in a same direction as the second layer metal traces (806, 810); the third layer metal traces (902, 904) are arranged such that they have alternating polarities and overlap with the second layer metal traces (806, 810) of different polarity; the third layer metal traces (902, 904) run in a same direction as the second layer metal traces (806, 810); the third layer metal traces (902, 904) are arranged such that they have alternating polarities and overlap with the second layer metal traces (806, 810) of different polarity; wherein the design parameter comprises pitch, metal width, or metal spacing.