An epitaxial wafer manufacturing device (1A, 1B) that deposits and grows epitaxial layers on the surfaces of heated wafers while supplying a raw material gas to a chamber, provided with: a susceptor having a plurality of mounting portions on which the wafers are mounted, wherein the plurality of mounting portions are arranged in a row in the circumferential direction; a top plate arranged in opposition to the upper surface of the susceptor so as to form a reaction space between the top plate and the susceptor; a heating means arranged on the lower surface side of the susceptor and/or upper surface side of the top plate for heating the wafers mounted on the mounting portions; a gas supply means having a gas inlet for introducing the raw material gas from a central portion of the upper surface of the top plate to the reaction space, that supplies raw material gas released from the gas inlet from the inside to the outside of the reaction space; and, a shield (12, 12A, 12B, 12C) removably attached inside the chamber and arranged in close proximity to the lower surface of the top plate so as to prevent deposits from being deposited on the lower surface of the top plate; wherein, the shield has a substrate having an opening in the central portion thereof that forces the gas inlet to face the inside of the reaction space, and a thin film that covers the lower surface of this substrate, the surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate, the height of the fine surface irregularities is within the range of 2 μm to 50 μm, the thickness of the thin film is within the range of 30 μm to 200 μm, and the interval between mutually adjacent convex portions of the fine surface irregularities is within the range of 50 μm to 150 μm, and when the shield (12, 12A, 12B, 12C) has undergone thermal deformation as a result of being heated by the heating means, deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities. a susceptor having a plurality of mounting portions on which the wafers are mounted, wherein the plurality of mounting portions are arranged in a row in the circumferential direction; a top plate arranged in opposition to the upper surface of the susceptor so as to form a reaction space between the top plate and the susceptor; a heating means arranged on the lower surface side of the susceptor and/or upper surface side of the top plate for heating the wafers mounted on the mounting portions; a gas supply means having a gas inlet for introducing the raw material gas from a central portion of the upper surface of the top plate to the reaction space, that supplies raw material gas released from the gas inlet from the inside to the outside of the reaction space; and, a shield (12, 12A, 12B, 12C) removably attached inside the chamber and arranged in close proximity to the lower surface of the top plate so as to prevent deposits from being deposited on the lower surface of the top plate; wherein, the shield has a substrate having an opening in the central portion thereof that forces the gas inlet to face the inside of the reaction space, and a thin film that covers the lower surface of this substrate, the surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate, the height of the fine surface irregularities is within the range of 2 μm to 50 μm, the thickness of the thin film is within the range of 30 μm to 200 μm, and the interval between mutually adjacent convex portions of the fine surface irregularities is within the range of 50 μm to 150 μm, and when the shield (12, 12A, 12B, 12C) has undergone thermal deformation as a result of being heated by the heating means, deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.