A radiation-emitting semiconductor chip comprising a semiconductor body, which has an n-conducting region and a p-conducting region, wherein - between the n-conducting region and the p-conducting region an active region suitable for generating radiation is arranged, in which electrons passed into the active region via the n-conducting region and holes passed into the active region via the p-conducting region recombine with generation of radiation, - on a side of the active region opposite to the p-conducting region a hole barrier layer is arranged which contains a material from the III-V semiconductor material system In y Ga 1-x-y Al x N with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1, and is configured in such a way for reducing or completely blocking a penetration of holes into the n-conducting region, - the hole barrier layer has a thickness between 11 nm and 30 nm inclusive or greater than 30 nm, characterized in that i. the hole barrier layer is formed as a pure hole barrier layer, in which the energy of the conduction band edge of the hole barrier layer is less than or equal to the energy of the conduction band edge of a layer arranged on the side of the n-conducting region adjacent to the hole barrier layer, so that electrons from the n-conducting region can pass in a manner free of a potential barrier through the pure hole barrier layer into the active region, wherein in order to form the pure hole barrier layer the hole barrier layer is n-doped stronger than the layer adjacent to the hole barrier layer arranged on the side of the n-conducting region, or ii. the hole barrier layer contains the material from the III-V semiconductor material system In y Ga 1-x-y Al x N with 0,2 ≤ x ≤ 1, 0 < y < x and x + y ≤ 1, wherein the band gap of the indium-containing and aluminum-containing hole barrier layer and thus a resulting potential barrier for the holes are set by variation of the aluminum content, and lattice constant of the hole barrier layer is set by variation of the indium content y in such a way that the hole barrier layer is formed simultaneously as a buffer layer for layers of the active region in order to reduce tensil stresses in the semiconductor body. - between the n-conducting region and the p-conducting region an active region suitable for generating radiation is arranged, in which electrons passed into the active region via the n-conducting region and holes passed into the active region via the p-conducting region recombine with generation of radiation, - on a side of the active region opposite to the p-conducting region a hole barrier layer is arranged which contains a material from the III-V semiconductor material system In y Ga 1-x-y Al x N with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1, and is configured in such a way for reducing or completely blocking a penetration of holes into the n-conducting region, - the hole barrier layer has a thickness between 11 nm and 30 nm inclusive or greater than 30 nm, i. the hole barrier layer is formed as a pure hole barrier layer, in which the energy of the conduction band edge of the hole barrier layer is less than or equal to the energy of the conduction band edge of a layer arranged on the side of the n-conducting region adjacent to the hole barrier layer, so that electrons from the n-conducting region can pass in a manner free of a potential barrier through the pure hole barrier layer into the active region, wherein in order to form the pure hole barrier layer the hole barrier layer is n-doped stronger than the layer adjacent to the hole barrier layer arranged on the side of the n-conducting region, or ii. the hole barrier layer contains the material from the III-V semiconductor material system In y Ga 1-x-y Al x N with 0,2 ≤ x ≤ 1, 0 < y < x and x + y ≤ 1, wherein the band gap of the indium-containing and aluminum-containing hole barrier layer and thus a resulting potential barrier for the holes are set by variation of the aluminum content, and lattice constant of the hole barrier layer is set by variation of the indium content y in such a way that the hole barrier layer is formed simultaneously as a buffer layer for layers of the active region in order to reduce tensil stresses in the semiconductor body.