A method of forming a semiconductor package comprising: forming a plurality of electrical contacts (12, 22, 70, 88) on a first side (4, 28, 76) of a wafer (16, 44, 50, 72); applying a photoresist layer (24, 68, 94, 98, 110) to the first side of the wafer; patterning the photoresist layer; etching a plurality of notches (26, 36, 42, 48, 96) into the first side of the wafer using the photoresist layer, wherein each the plurality of notches has two parallel sidewalls extending straight into the first side and wherein the notches have a width of between 50 and 150 micrometers and a depth of between 25 and 200 micrometers; applying a first mold compound (14, 54) into the plurality of notches and over the first side of the wafer, wherein the first mold compound is anchored to each of the sidewalls of the plurality of notches through a plurality of ridges formed in the sidewalls of the plurality of notches; grinding a second side of the wafer opposite the first side of the wafer to the plurality of notches formed in the first side of the wafer; applying one of a second mold compound and a laminate resin to the second side of the wafer; and singulating the wafer, by cutting through the wafer where the notches were formed, into a plurality of semiconductor packages each including a die (2, 66, 46, 52) therein, wherein a top side and whole perimeter sides of the die in each semiconductor package are covered by the first mold compound and a bottom side of the die in each semiconductor package is covered by the second mold compound or the laminate resin; wherein each of the ridges extending from the sidewalls have a height of 0.2 micrometers and the ridges extending from each of the sidewalls have a pitch of one micrometer. forming a plurality of electrical contacts (12, 22, 70, 88) on a first side (4, 28, 76) of a wafer (16, 44, 50, 72); applying a photoresist layer (24, 68, 94, 98, 110) to the first side of the wafer; patterning the photoresist layer; etching a plurality of notches (26, 36, 42, 48, 96) into the first side of the wafer using the photoresist layer, wherein each the plurality of notches has two parallel sidewalls extending straight into the first side and wherein the notches have a width of between 50 and 150 micrometers and a depth of between 25 and 200 micrometers; applying a first mold compound (14, 54) into the plurality of notches and over the first side of the wafer, wherein the first mold compound is anchored to each of the sidewalls of the plurality of notches through a plurality of ridges formed in the sidewalls of the plurality of notches; grinding a second side of the wafer opposite the first side of the wafer to the plurality of notches formed in the first side of the wafer; applying one of a second mold compound and a laminate resin to the second side of the wafer; and singulating the wafer, by cutting through the wafer where the notches were formed, into a plurality of semiconductor packages each including a die (2, 66, 46, 52) therein, wherein a top side and whole perimeter sides of the die in each semiconductor package are covered by the first mold compound and a bottom side of the die in each semiconductor package is covered by the second mold compound or the laminate resin; wherein each of the ridges extending from the sidewalls have a height of 0.2 micrometers and the ridges extending from each of the sidewalls have a pitch of one micrometer.