A semiconductor light emitting device comprising: a semiconductor laminate including first and second main surfaces opposed to each other, first and second conductivity type semiconductor layers (65a, 65c) respectively providing the first and second main surfaces, and an active layer formed therebetween, and divided into first and second regions (A, B) by a separation groove (g); at least one first contact hole formed to pass through the active layer from the second main surface of the first region so as to be connected to one region of the first conductivity type semiconductor layer; at least one second contact hole formed to pass through the active layer from the second main surface of the second region so as to be connected to one region of the first conductivity type semiconductor layer; a first electrode formed on the second main surface of the semiconductor laminate, connected to the first conductivity type semiconductor layer of the first region through the at least one first contact hole, and connected to the second conductivity type semiconductor layer of the second region therethrough, and having a region exposed to the separation groove; and a second electrode formed on the second main surface of the semiconductor laminate, connected to the first conductivity type semiconductor layer of the second region through the at least one second contact hole, and connected to the second conductivity type semiconductor layer of the first region therethrough; characterised in that said semiconductor light emitting device further comprises: an electrode pad formed on the first conductivity type semiconductor layer of the second region; and a passivation layer formed between the electrode pad and the first conductivity type semiconductor layer of the second region so as to prevent direct contact therebetween, wherein the electrode pad and the exposed region of the first electrode are electrically connected through an electrode connection unit formed along a side surface of the second region of the semiconductor laminate, the electrode connection unit being electrically isolated by the passivation layer. a semiconductor laminate including first and second main surfaces opposed to each other, first and second conductivity type semiconductor layers (65a, 65c) respectively providing the first and second main surfaces, and an active layer formed therebetween, and divided into first and second regions (A, B) by a separation groove (g); at least one first contact hole formed to pass through the active layer from the second main surface of the first region so as to be connected to one region of the first conductivity type semiconductor layer; at least one second contact hole formed to pass through the active layer from the second main surface of the second region so as to be connected to one region of the first conductivity type semiconductor layer; a first electrode formed on the second main surface of the semiconductor laminate, connected to the first conductivity type semiconductor layer of the first region through the at least one first contact hole, and connected to the second conductivity type semiconductor layer of the second region therethrough, and having a region exposed to the separation groove; and a second electrode formed on the second main surface of the semiconductor laminate, connected to the first conductivity type semiconductor layer of the second region through the at least one second contact hole, and connected to the second conductivity type semiconductor layer of the first region therethrough; characterised in that said semiconductor light emitting device further comprises: an electrode pad formed on the first conductivity type semiconductor layer of the second region; and a passivation layer formed between the electrode pad and the first conductivity type semiconductor layer of the second region so as to prevent direct contact therebetween, an electrode pad formed on the first conductivity type semiconductor layer of the second region; and a passivation layer formed between the electrode pad and the first conductivity type semiconductor layer of the second region so as to prevent direct contact therebetween,