A semiconductor device for measuring voltage of each of a plurality of unit cells (BC 1 -BC 12) series-coupled in multi-stage and configuring an assembled battery, the semiconductor device comprising: a first terminal (C n) to be coupled to a first node, wherein the first node is one electrode of a first unit cell (BC n) in the plurality of unit cells (BC 1 -BC 12) and is coupled to a second unit cell (BC n+1) in the plurality of unit cells (BC 1 -BC 12); a second terminal (C n-1) to be coupled to a second node, wherein the second node is the other electrode of the first unit cell (BC n) and is coupled to a third unit cell (BC n-1) in the plurality of unit cells (BC 1 -BC 12); a voltage measurement circuit operable to measure an inter-terminal voltage between the first terminal (C n) and the second terminal (C n-1); a first level shifter circuit operable to convert the inter-terminal voltage into a low-potential-side inter-terminal voltage; a comparator circuit operable to compare the low-potential-side inter-terminal voltage with a predetermined reference voltage (V ref); a second level shifter circuit operable to convert a low-potential-side shunt control signal (EN_L TAP) into a high-potential-side shunt control signal (EN_H TAP); and a first switch operable to short-circuit the first terminal (C n) and the second terminal (C n-1) via a first resistor (R TAP, 21), on the basis of the high-potential-side shunt control signal (EN_H TAP); wherein the voltage measurement circuit is configured to output a voltage value corresponding to the inter-terminal voltage measured between the first terminal (C n) and the second terminal (C n-1); characterised in that the comparator circuit is operable to perform detection of overcharge/discharge of the first unit cell (BC n) by comparing the low-potential-side inter-terminal voltage with the predetermined reference voltage (V ref) while the switch is open; wherein the comparator circuit is operable to perform detection of disconnection between the first node and the first terminal (C n) or the second node and the second terminal (C n-1) by comparing the low-potential-side inter-terminal voltage with the predetermined reference voltage (V ref) while the switch is closed so as to short-circuit the first terminal (C n) and the second terminal (C n-1) via the first resistor (R TAP, 21); and wherein the second level shifter circuit is configured such that high-potential-side shunt control signals (EN_H TAP) assigned to each of the plurality of unit cells (BC 1 -BC 12) respectively have different potentials. a first terminal (C n) to be coupled to a first node, wherein the first node is one electrode of a first unit cell (BC n) in the plurality of unit cells (BC 1 -BC 12) and is coupled to a second unit cell (BC n+1) in the plurality of unit cells (BC 1 -BC 12); a second terminal (C n-1) to be coupled to a second node, wherein the second node is the other electrode of the first unit cell (BC n) and is coupled to a third unit cell (BC n-1) in the plurality of unit cells (BC 1 -BC 12); a voltage measurement circuit operable to measure an inter-terminal voltage between the first terminal (C n) and the second terminal (C n-1); a first level shifter circuit operable to convert the inter-terminal voltage into a low-potential-side inter-terminal voltage; a comparator circuit operable to compare the low-potential-side inter-terminal voltage with a predetermined reference voltage (V ref); a second level shifter circuit operable to convert a low-potential-side shunt control signal (EN_L TAP) into a high-potential-side shunt control signal (EN_H TAP); and a first switch operable to short-circuit the first terminal (C n) and the second terminal (C n-1) via a first resistor (R TAP, 21), on the basis of the high-potential-side shunt control signal (EN_H TAP); wherein the voltage measurement circuit is configured to output a voltage value corresponding to the inter-terminal voltage measured between the first terminal (C n) and the second terminal (C n-1); characterised in that the comparator circuit is operable to perform detection of overcharge/discharge of the first unit cell (BC n) by comparing the low-potential-side inter-terminal voltage with the predetermined reference voltage (V ref) while the switch is open; wherein the comparator circuit is operable to perform detection of disconnection between the first node and the first terminal (C n) or the second node and the second terminal (C n-1) by comparing the low-potential-side inter-terminal voltage with the predetermined reference voltage (V ref) while the switch is closed so as to short-circuit the first terminal (C n) and the second terminal (C n-1) via the first resistor (R TAP, 21); and wherein the second level shifter circuit is configured such that high-potential-side shunt control signals (EN_H TAP) assigned to each of the plurality of unit cells (BC 1 -BC 12) respectively have different potentials.