A solid-state imaging device comprising: a photodetecting unit including M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns; a row control unit outputting a control signal for controlling an operation of N pixel units P(m,1) to P(m,N) in an m-th row of the photodetecting unit to each row; a column control unit outputting a control signal for controlling an operation of M pixel units P(1,n) to P(M,n) in an n-th column of the photodetecting unit to each column; and a signal readout unit reading out signals from the M×N pixel units P(1,1) to P(M,N) of the photodetecting unit, wherein each pixel unit P(m,n) of the photodetecting unit includes a photodiode that generates a charge of an amount according to an incident light amount, an amplifying transistor that outputs a signal having a value according to an amount of charge of a gate terminal, a transfer transistor that transfers the charge generated in the photodiode to the gate terminal of the amplifying transistor, a readout transistor that outputs the signal output from the amplifying transistor to the signal readout unit, a first initialization transistor that initializes charge accumulation of the photodiode, and a second initialization transistor that initializes charge accumulation of the gate terminal of the amplifying transistor, characterized in that one of the transfer transistor and the first initialization transistor performs an on/off operation based on the control signal output from the row control unit and the other performs an on/off operation based on the control signal output from the column control unit, where M and N are each an integer of 2 or more, m is an integer from 1 to M, and n is an integer from 1 to N; and wherein the M×N pixel units P(1,1) to P(M,N) of the photodetecting unit are divided into a plurality of blocks, each of the plurality of blocks includes pixel units arrayed in Q rows and R columns, and in a pixel unit of a q-th row and an r-th column in each of the plurality of blocks, the transfer transistor performs the on/off operation based on the same control signal and the first initialization transistor performs the on/off operation based on the same control signal, where at least one of Q and R is an integer of 2 or more, q is an integer from 1 to Q, and r is an integer from 1 to R. a photodetecting unit including M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns; a row control unit outputting a control signal for controlling an operation of N pixel units P(m,1) to P(m,N) in an m-th row of the photodetecting unit to each row; a column control unit outputting a control signal for controlling an operation of M pixel units P(1,n) to P(M,n) in an n-th column of the photodetecting unit to each column; and a signal readout unit reading out signals from the M×N pixel units P(1,1) to P(M,N) of the photodetecting unit, wherein each pixel unit P(m,n) of the photodetecting unit includes a photodiode that generates a charge of an amount according to an incident light amount, an amplifying transistor that outputs a signal having a value according to an amount of charge of a gate terminal, a transfer transistor that transfers the charge generated in the photodiode to the gate terminal of the amplifying transistor, a readout transistor that outputs the signal output from the amplifying transistor to the signal readout unit, a first initialization transistor that initializes charge accumulation of the photodiode, and a second initialization transistor that initializes charge accumulation of the gate terminal of the amplifying transistor, characterized in that one of the transfer transistor and the first initialization transistor performs an on/off operation based on the control signal output from the row control unit and the other performs an on/off operation based on the control signal output from the column control unit, where M and N are each an integer of 2 or more, m is an integer from 1 to M, and n is an integer from 1 to N; and wherein the M×N pixel units P(1,1) to P(M,N) of the photodetecting unit are divided into a plurality of blocks, each of the plurality of blocks includes pixel units arrayed in Q rows and R columns, and in a pixel unit of a q-th row and an r-th column in each of the plurality of blocks, the transfer transistor performs the on/off operation based on the same control signal and the first initialization transistor performs the on/off operation based on the same control signal, where at least one of Q and R is an integer of 2 or more, q is an integer from 1 to Q, and r is an integer from 1 to R.