A light emitting device comprising: a light emitting structure comprising a plurality of light emitting regions (P1 to P12) comprising a first semiconductor layer, an active layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the active layer; a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions (P1 to P12), the first electrode unit corresponding to a common negative terminal; a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions (P1 to P12), the second electrode unit corresponding to one of the positive terminals; at least one intermediate pad (182, 184, 186) disposed on the second semiconductor layer in at least still another (P3, P6, P9) of the light emitting regions, the intermediate pad corresponding to others of the positive terminals; and at least one connection electrode (160-1 to 160-11) to sequentially connect the light emitting regions (P1 to P12) in series from a first light emitting region to a last light emitting region, wherein the light emitting regions (P1 to P12) connected in series are divided into 1 st to i th light emitting region groups, where 1<i≤j, each of i and j is a natural number, and j is a last light emitting region group, characterised in that areas of light emitting regions that belong to different groups are different, areas of light emitting regions (P1 to P12) that belong to respective groups decrease from the 1 st group to the j th group in order, and areas of light emitting regions that belong to a group closer to the common negative terminal are larger than areas of light emitting regions that belong to a group farther from the common negative terminal. a light emitting structure comprising a plurality of light emitting regions (P1 to P12) comprising a first semiconductor layer, an active layer disposed on the first semiconductor layer and a second semiconductor layer disposed on the active layer; a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions (P1 to P12), the first electrode unit corresponding to a common negative terminal; a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions (P1 to P12), the second electrode unit corresponding to one of the positive terminals; at least one intermediate pad (182, 184, 186) disposed on the second semiconductor layer in at least still another (P3, P6, P9) of the light emitting regions, the intermediate pad corresponding to others of the positive terminals; and at least one connection electrode (160-1 to 160-11) to sequentially connect the light emitting regions (P1 to P12) in series from a first light emitting region to a last light emitting region, wherein the light emitting regions (P1 to P12) connected in series are divided into 1 st to i th light emitting region groups, where 1<i≤j, each of i and j is a natural number, and j is a last light emitting region group, characterised in that areas of light emitting regions that belong to different groups are different, areas of light emitting regions (P1 to P12) that belong to respective groups decrease from the 1 st group to the j th group in order, and areas of light emitting regions that belong to a group closer to the common negative terminal are larger than areas of light emitting regions that belong to a group farther from the common negative terminal.