A semiconductor power device (100, 300) comprising: - a first substrate (110, 400) comprising a first patterned electrically conductive layer (112, 113, 412), the first substrate (110, 400) having a first surface on which the first patterned electrically conductive layer (112, 113, 412) is provided, - a second substrate (120, 450) comprising a second patterned electrically conductive layer (122, 422) and a second surface facing the first surface, the second patterned electrically conductive layer (122, 422) being provided on the second surface, - a switching semiconductor element arranged between the first patterned electrically conductive layer (112, 113, 412) and the second patterned electrically conductive layer (122, 422), the switching semiconductor element being provided on the first patterned electrically conductive layer, - a stack (130, 430) of an electrically conductive track (132, 432) and a layer (131, 431) of a dielectric material, the layer (131, 431) of the dielectric material being at least partly provided on the first patterned electrically conductive layer (112, 113, 412), or on the second patterned electrically conductive layer (122, 422) isolating the electrically conductive track (132, 432) from said patterned electrically conductive layer (112, 122, 113, 412, 422) on which the stack (130, 430) is provided, the electrically conductive track (132, 432) being electrically coupled to a gate or a base of the switching semiconductor element (115, 415, 465, 465', 465") for controlling the switching semiconductor element (115, 415, 465, 465', 465"),and - an interconnect structure (140, 141, 440, 440', 441, 441') for providing at least - a first electrical connection (141, 441) between a surface of the switching semiconductor element, and the second patterned electrically conductive layer (122, 422), and - a second electrical connection (140, 440) between the surface of the switching semiconductor element or the first patterned electrically conductive layer, and the electrically conductive track (132, 432) at the other side. - a first substrate (110, 400) comprising a first patterned electrically conductive layer (112, 113, 412), the first substrate (110, 400) having a first surface on which the first patterned electrically conductive layer (112, 113, 412) is provided, - a second substrate (120, 450) comprising a second patterned electrically conductive layer (122, 422) and a second surface facing the first surface, the second patterned electrically conductive layer (122, 422) being provided on the second surface, - a switching semiconductor element arranged between the first patterned electrically conductive layer (112, 113, 412) and the second patterned electrically conductive layer (122, 422), the switching semiconductor element being provided on the first patterned electrically conductive layer, - a stack (130, 430) of an electrically conductive track (132, 432) and a layer (131, 431) of a dielectric material, the layer (131, 431) of the dielectric material being at least partly provided on the first patterned electrically conductive layer (112, 113, 412), or on the second patterned electrically conductive layer (122, 422) isolating the electrically conductive track (132, 432) from said patterned electrically conductive layer (112, 122, 113, 412, 422) on which the stack (130, 430) is provided, the electrically conductive track (132, 432) being electrically coupled to a gate or a base of the switching semiconductor element (115, 415, 465, 465', 465") for controlling the switching semiconductor element (115, 415, 465, 465', 465"),and - an interconnect structure (140, 141, 440, 440', 441, 441') for providing at least - a first electrical connection (141, 441) between a surface of the switching semiconductor element, and the second patterned electrically conductive layer (122, 422), and - a second electrical connection (140, 440) between the surface of the switching semiconductor element or the first patterned electrically conductive layer, and the electrically conductive track (132, 432) at the other side.