A high-frequency module, comprising: - A semiconductor component which is configured to generate and/or process electrical high-frequency signals (s HF, r HF), a waveguide, - a coupling element which is electrically contacted with the semiconductor component and galvanically contacted with the waveguide in order to couple the high-frequency signals (s HF) into the waveguide as radar signals (s HF) and/or to couple radar signals (r HF) from the waveguide into the semiconductor component as electrical signals (r HF), with ∘ a first metalization layer, ∘ a second metalization layer, ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer, and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer, - wherein the electrical plated through-holes (112, 113) are configured as metalized vias, wherein the first plated through-holes are arranged along an internal, almost closed contour in such a way that the radar signals (s HF, r HF) in the coupling element are mainly conducted in TE10 mode, and wherein the second plated through-holes are arranged relative to the internal contour along an external, almost closed contour in such a way that the high-frequency signals (s HF, r HF) are conducted laterally in the coupling element and are diverted by 90° in the direction of the axis of the waveguide and from this direction by 90° into the plane of the metalization layers (110, 111). - A semiconductor component which is configured to generate and/or process electrical high-frequency signals (s HF, r HF), a waveguide, - a coupling element which is electrically contacted with the semiconductor component and galvanically contacted with the waveguide in order to couple the high-frequency signals (s HF) into the waveguide as radar signals (s HF) and/or to couple radar signals (r HF) from the waveguide into the semiconductor component as electrical signals (r HF), with ∘ a first metalization layer, ∘ a second metalization layer, ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer, and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer, ∘ a first metalization layer, ∘ a second metalization layer, ∘ first electrical plated through-holes which contact the semiconductor component with the first metalization layer, and ∘ second electrical plated through-holes between the first metalization layer and the second metalization layer, - wherein the electrical plated through-holes (112, 113) are configured as metalized vias, wherein the first plated through-holes are arranged along an internal, almost closed contour in such a way that the radar signals (s HF, r HF) in the coupling element are mainly conducted in TE10 mode, and wherein the second plated through-holes are arranged relative to the internal contour along an external, almost closed contour in such a way that the high-frequency signals (s HF, r HF) are conducted laterally in the coupling element and are diverted by 90° in the direction of the axis of the waveguide and from this direction by 90° into the plane of the metalization layers (110, 111).