A bolometer type detection structure for detecting an electromagnetic radiation, the detection structure including: - at least one absorbent element (121, 125) configured to absorb the electromagnetic radiation, said absorbent element (121, 125) defining an absorption plane, - a transistor of the MOS-FET type associated with the absorbent element to detect the temperature rise of said absorbent element during the absorption of the electromagnetic radiation by the latter, the transistor including: • at least one first and at least one second zone (111, 112) of a first type of conductivity, • at least one third zone separating the first and second zones (111, 112) from each other, the third zone being of a second type of conductivity which is opposite to the first type of conductivity and having a majority carrier concentration which is lower than that of the first and second zones (111, 112), • a gate electrode arranged to bias the third zone, the detection structure being characterised in that the first zone, the third zone and the second zone are formed respectively by first, third and second layers, each of the first layer, the second layer, and the third layer extending parallel to the absorption plane, the first, third and second layers following each other in a direction perpendicular to said absorption plane, each of said first, second and third zones having, according to the thickness of the corresponding layer, at least one lateral wall, and in that the gate electrode covers the third zone along at least one lateral wall of said third zone. - at least one absorbent element (121, 125) configured to absorb the electromagnetic radiation, said absorbent element (121, 125) defining an absorption plane, - a transistor of the MOS-FET type associated with the absorbent element to detect the temperature rise of said absorbent element during the absorption of the electromagnetic radiation by the latter, the transistor including: • at least one first and at least one second zone (111, 112) of a first type of conductivity, • at least one third zone separating the first and second zones (111, 112) from each other, the third zone being of a second type of conductivity which is opposite to the first type of conductivity and having a majority carrier concentration which is lower than that of the first and second zones (111, 112), • a gate electrode arranged to bias the third zone, • at least one first and at least one second zone (111, 112) of a first type of conductivity, • at least one third zone separating the first and second zones (111, 112) from each other, the third zone being of a second type of conductivity which is opposite to the first type of conductivity and having a majority carrier concentration which is lower than that of the first and second zones (111, 112), • a gate electrode arranged to bias the third zone, the detection structure being characterised in that the first zone, the third zone and the second zone are formed respectively by first, third and second layers, each of the first layer, the second layer, and the third layer extending parallel to the absorption plane, the first, third and second layers following each other in a direction perpendicular to said absorption plane, each of said first, second and third zones having, according to the thickness of the corresponding layer, at least one lateral wall, and in that the gate electrode covers the third zone along at least one lateral wall of said third zone.