A magnetic random access memory-based ternary content addressable memory cell, comprising: a first and second magnetic tunnel junction (2, 2'), each magnetic tunnel junction (2, 2') being formed from a storage layer having a magnetization that can be switched from a first stable direction to a second stable direction, a sense layer having a variable magnetization direction, and an insulating layer between the storage layer and the sense layer; a first and second straps (14, 14'), respectively connected to the first and second magnetic tunnel junction (2, 2') and extending on each side of the first and second magnetic tunnel junctions (2, 2'), respectively; a first and second selection transistors (6, 6'), respectively connected to one extremity of the first and second straps (14, 14') and allowing passing a heating current selectively through the first and second straps (14, 14'), respectively; a first and second current lines (3, 3') for passing the heating current and/or a sense current; and a first field line for passing at least a first write field current; characterized in that the cell further comprises a conductive line electrically connecting in series the first and second magnetic tunnel junctions (2, 2') at their ends opposed to the ones connecting the first and second straps (14, 14'); and in that the first and second current lines (3, 3') are respectively connected to the other extremity of the first and second straps (14, 14') configured to pass the sense current through the first and second magnetic tunnel junctions (2, 2') and the conductive line when the two selection transistor (6, 6') are in a blocked mode. a first and second magnetic tunnel junction (2, 2'), each magnetic tunnel junction (2, 2') being formed from a storage layer having a magnetization that can be switched from a first stable direction to a second stable direction, a sense layer having a variable magnetization direction, and an insulating layer between the storage layer and the sense layer; a first and second straps (14, 14'), respectively connected to the first and second magnetic tunnel junction (2, 2') and extending on each side of the first and second magnetic tunnel junctions (2, 2'), respectively; a first and second selection transistors (6, 6'), respectively connected to one extremity of the first and second straps (14, 14') and allowing passing a heating current selectively through the first and second straps (14, 14'), respectively; a first and second current lines (3, 3') for passing the heating current and/or a sense current; and a first field line for passing at least a first write field current; characterized in that the cell further comprises a conductive line electrically connecting in series the first and second magnetic tunnel junctions (2, 2') at their ends opposed to the ones connecting the first and second straps (14, 14'); and in that the first and second current lines (3, 3') are respectively connected to the other extremity of the first and second straps (14, 14') configured to pass the sense current through the first and second magnetic tunnel junctions (2, 2') and the conductive line when the two selection transistor (6, 6') are in a blocked mode.