An apparatus of manufacturing a silicon carbide single crystal, comprising: a crucible main body housing a sublimation material; a lid member including a seed crystal supporting member of a cylindrical shape configured to fix a seed crystal at a position facing the sublimation material, the seed crystal supporting member protruding from the center in a radial direction of an inner surface of the lid member to the inner side of the crucible main body; a guide member of a cylindrical shape extending from the vicinity of an outer periphery of the seed crystal supporting member toward the sublimation material, such that it expands in a circular truncated cone shape downwardly from the vicinity of an outer peripheral side of the seed crystal supporting member, the lower end portion of the guide member being locked with an inner wall surface of the crucible main body so that the guide member is held; and a heat insulating material (21, 23, 25) that has an inner peripheral surface being in contact with an outer peripheral surface of the seed crystal supporting member, the heat insulating material arranged at an outer peripheral side of the seed crystal supporting member, the heat insulating material attached to the inner surface of the lid member, and the heat insulating material having a disk shape and having a heat conductivity lower than a heat conductivity of the single crystal, wherein when the sublimation material and the seed crystal are heated to grow the single crystal, a flow of heat traveling from the sublimation material to the seed crystal is concentrated onto the seed crystal by the heat insulating material, wherein a thickness of the heat insulating material is thinner than or the same as a height of the seed crystal supporting member. a crucible main body housing a sublimation material; a lid member including a seed crystal supporting member of a cylindrical shape configured to fix a seed crystal at a position facing the sublimation material, the seed crystal supporting member protruding from the center in a radial direction of an inner surface of the lid member to the inner side of the crucible main body; a guide member of a cylindrical shape extending from the vicinity of an outer periphery of the seed crystal supporting member toward the sublimation material, such that it expands in a circular truncated cone shape downwardly from the vicinity of an outer peripheral side of the seed crystal supporting member, the lower end portion of the guide member being locked with an inner wall surface of the crucible main body so that the guide member is held; and a heat insulating material (21, 23, 25) that has an inner peripheral surface being in contact with an outer peripheral surface of the seed crystal supporting member, the heat insulating material arranged at an outer peripheral side of the seed crystal supporting member, the heat insulating material attached to the inner surface of the lid member, and the heat insulating material having a disk shape and having a heat conductivity lower than a heat conductivity of the single crystal, wherein when the sublimation material and the seed crystal are heated to grow the single crystal, a flow of heat traveling from the sublimation material to the seed crystal is concentrated onto the seed crystal by the heat insulating material, wherein a thickness of the heat insulating material is thinner than or the same as a height of the seed crystal supporting member.