A light emitting device, comprising: a second conductivity type semiconductor layer; an active layer on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; a first electrode layer on the first conductivity type semiconductor layer; a non-conductive semiconductor layer on the first conductivity type semiconductor layer; and a photonic crystal structure comprising a first light extraction pattern on the non-conductive semiconductor layer having a first period, and a second light extraction pattern on the non-conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the non-conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer, wherein the first light extraction pattern comprises plurality of holes formed in the non-conductive semiconductor layer, wherein the second light extraction pattern comprises plurality of protrusions disposed on the first light extraction pattern and on the non-conductive semiconductor layer, wherein a light emitting semiconductor layer includes the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, wherein the first electrode layer is formed on a region of the first conductivity type semiconductor layer from which the non-conductive semiconductor layer and a portion of the first conductivity type semiconductor layer are selectively removed, wherein the second light extraction pattern is formed on the portion of the first conductivity type semiconductor layer on which the first electrode layer is disposed. a second conductivity type semiconductor layer; an active layer on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; a first electrode layer on the first conductivity type semiconductor layer; a non-conductive semiconductor layer on the first conductivity type semiconductor layer; and a photonic crystal structure comprising a first light extraction pattern on the non-conductive semiconductor layer having a first period, and a second light extraction pattern on the non-conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the non-conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer, wherein the first light extraction pattern comprises plurality of holes formed in the non-conductive semiconductor layer, wherein the second light extraction pattern comprises plurality of protrusions disposed on the first light extraction pattern and on the non-conductive semiconductor layer, wherein a light emitting semiconductor layer includes the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, wherein the first electrode layer is formed on a region of the first conductivity type semiconductor layer from which the non-conductive semiconductor layer and a portion of the first conductivity type semiconductor layer are selectively removed, wherein the second light extraction pattern is formed on the portion of the first conductivity type semiconductor layer on which the first electrode layer is disposed.