Method for manufacturing an opto-microelectronic micro-imaging device, comprising: - a step of forming a first functional portion based on a first substrate of the semiconductor-on-insulator type which comprises a surface layer of monocrystalline semiconductor and a base layer of electrically insulating material immediately beneath the surface layer, with the surface layer and at least one portion of the base layer being a part of the first functional portion, step of forming wherein is carried out a plurality of metal oxide semiconductor field effect transistors (MOSFET) from the surface layer, and at least one wiring layer, above the surface layer, wherein is formed at least one first electric connection pad configured to participate in an electric connection of an electrode of each transistor to a pixel electrode, with each transistor having a nominal position in the plane of the substrate; - a step of transferring the first functional portion by solidly attaching an upper face of the first functional portion located on one side of the first functional layer opposite the base layer and a second substrate, - a step of thinning the first substrate by the face of the first substrate opposite the second substrate to the base layer by preserving at least one portion of the thickness of the base layer; - a step of forming, on the base layer, a second functional portion, comprising the pixel electrode and provided with at least one second electric connection pad configured to participate in the electric connection of the electrode of each transistor to a pixel electrode, - before the step of transferring the first functional portion, a step of forming at least one via, connected to the first electric connection pad and passing through the first functional portion from the first electric connection pad to the base layer included; method wherein the step of forming the second functional portion comprises the connecting of the via to the second electric connection pad, characterised in that the width of the second electric connection pad is chosen to be at least equal to twice a maximum flat deformation supported by the first functional portion during the transfer, said flat deformation being determined as being the maximum displacement in the plane of the substrate undergone by the plurality of transistors with respect to the nominal position during the step of transferring. - a step of forming a first functional portion based on a first substrate of the semiconductor-on-insulator type which comprises a surface layer of monocrystalline semiconductor and a base layer of electrically insulating material immediately beneath the surface layer, with the surface layer and at least one portion of the base layer being a part of the first functional portion, step of forming wherein is carried out a plurality of metal oxide semiconductor field effect transistors (MOSFET) from the surface layer, and at least one wiring layer, above the surface layer, wherein is formed at least one first electric connection pad configured to participate in an electric connection of an electrode of each transistor to a pixel electrode, with each transistor having a nominal position in the plane of the substrate; - a step of transferring the first functional portion by solidly attaching an upper face of the first functional portion located on one side of the first functional layer opposite the base layer and a second substrate, - a step of thinning the first substrate by the face of the first substrate opposite the second substrate to the base layer by preserving at least one portion of the thickness of the base layer; - a step of forming, on the base layer, a second functional portion, comprising the pixel electrode and provided with at least one second electric connection pad configured to participate in the electric connection of the electrode of each transistor to a pixel electrode, - before the step of transferring the first functional portion, a step of forming at least one via, connected to the first electric connection pad and passing through the first functional portion from the first electric connection pad to the base layer included;