An optoelectronic device comprising at least: ▪ a first and a second light-emitting nanowires (60, 62) formed on a support and each comprising a semiconductor area of a first type (68, 70) for the injection of holes and a semiconductor area of a second type (72, 74) for the injection of electrons; ▪ a series electric connection of the first and second light-emitting nanowires (60, 62) comprising: ∘ a semiconductor connection nanowire formed on the support and comprising: • a first region capable of forming with the hole injection area of the first nanowire an electric path enabling an electric current to flow; • a second region capable of forming with the electron injection area of the second nanowire an electric path enabling an electric current to flow; and • a third region in contact with the first and second regions (84, 90) enabling an electric current to flow therebetween; o a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire; and o a second conductive area connecting the second region of the connection nanowire and the electron injection area of the second nanowire and electrically insulated from the first nanowire; each of the first and second light-emitting nanowires (60, 62) comprising a semiconductor core (64, 66) having its end (72, 74) formed on the support forming the hole injection area or the electron injection area, and a semiconductor shell (68, 70) surrounding the core (64, 66) at least over an upper portion thereof and forming the other area among the hole injection area and the electron injection area; ▪ the core of the first and second nanowires (60, 62) being formed of a semiconductor material or a first conductivity type; ▪ the shell of the first and second nanowires (60, 62) being formed of a semiconductor material of a second conductivity type, opposite to the first conductivity type; and ▪ the connection nanowire comprising at least one core made of the material of the first conductivity type. ▪ a first and a second light-emitting nanowires (60, 62) formed on a support and each comprising a semiconductor area of a first type (68, 70) for the injection of holes and a semiconductor area of a second type (72, 74) for the injection of electrons; ▪ a series electric connection of the first and second light-emitting nanowires (60, 62) comprising: ∘ a semiconductor connection nanowire formed on the support and comprising: • a first region capable of forming with the hole injection area of the first nanowire an electric path enabling an electric current to flow; • a second region capable of forming with the electron injection area of the second nanowire an electric path enabling an electric current to flow; and • a third region in contact with the first and second regions (84, 90) enabling an electric current to flow therebetween; o a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire; and o a second conductive area connecting the second region of the connection nanowire and the electron injection area of the second nanowire and electrically insulated from the first nanowire; ∘ a semiconductor connection nanowire formed on the support and comprising: • a first region capable of forming with the hole injection area of the first nanowire an electric path enabling an electric current to flow; • a second region capable of forming with the electron injection area of the second nanowire an electric path enabling an electric current to flow; and • a third region in contact with the first and second regions (84, 90) enabling an electric current to flow therebetween; • a first region capable of forming with the hole injection area of the first nanowire an electric path enabling an electric current to flow; • a second region capable of forming with the electron injection area of the second nanowire an electric path enabling an electric current to flow; and • a third region in contact with the first and second regions (84, 90) enabling an electric current to flow therebetween; o a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire; and o a second conductive area connecting the second region of the connection nanowire and the electron injection area of the second nanowire and electrically insulated from the first nanowire; ▪ the core of the first and second nanowires (60, 62) being formed of a semiconductor material or a first conductivity type; ▪ the shell of the first and second nanowires (60, 62) being formed of a semiconductor material of a second conductivity type, opposite to the first conductivity type; and ▪ the connection nanowire comprising at least one core made of the material of the first conductivity type.