A Vertical Cavity Surface Emitting Laser comprising - a first electrical contact, - a second electrical contact and - an optical resonator, the optical resonator comprising a first distributed Bragg reflector, an active layer, a distributed heterojunction bipolar phototransistor, a second distributed Bragg reflector and an optical guiding structure, the distributed heterojunction bipolar phototransistor comprises a collector layer, a light sensitive layer, a base layer and an emitter layer, wherein the distributed heterojunction bipolar phototransistor is arranged such that there is an optical coupling between the active layer and the distributed heterojunction bipolar phototransistor for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor, wherein the optical guiding structure is arranged to guide an optical mode within the optical resonator of the Vertical Cavity Surface Emitting Laser during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a current flow which can be provided by means of the first electrical contact and the second electrical contact during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a layer sequence between the first electrical contact and the second electrical contact in the vertical direction of the Vertical Cavity Surface Emitting Laser, characterised in that the optical guiding structure comprises an oxide aperture which is arranged in the second distributed Bragg reflector. - a first electrical contact, - a second electrical contact and - an optical resonator, the optical resonator comprising a first distributed Bragg reflector, an active layer, a distributed heterojunction bipolar phototransistor, a second distributed Bragg reflector and an optical guiding structure, the distributed heterojunction bipolar phototransistor comprises a collector layer, a light sensitive layer, a base layer and an emitter layer, wherein the distributed heterojunction bipolar phototransistor is arranged such that there is an optical coupling between the active layer and the distributed heterojunction bipolar phototransistor for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor, wherein the optical guiding structure is arranged to guide an optical mode within the optical resonator of the Vertical Cavity Surface Emitting Laser during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a current flow which can be provided by means of the first electrical contact and the second electrical contact during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a layer sequence between the first electrical contact and the second electrical contact in the vertical direction of the Vertical Cavity Surface Emitting Laser, characterised in that the optical guiding structure comprises an oxide aperture which is arranged in the second distributed Bragg reflector. wherein the distributed heterojunction bipolar phototransistor is arranged such that there is an optical coupling between the active layer and the distributed heterojunction bipolar phototransistor for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor, wherein the optical guiding structure is arranged to guide an optical mode within the optical resonator of the Vertical Cavity Surface Emitting Laser during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a current flow which can be provided by means of the first electrical contact and the second electrical contact during operation of the Vertical Cavity Surface Emitting Laser, wherein the optical guiding structure is arranged outside a layer sequence between the first electrical contact and the second electrical contact in the vertical direction of the Vertical Cavity Surface Emitting Laser, characterised in that the optical guiding structure comprises an oxide aperture which is arranged in the second distributed Bragg reflector.