A method for manufacturing a photovoltaic cell, comprising: providing a substrate; forming a first passivation layer, a first anti-reflection layer and a first electrode sequentially on a front surface of the substrate in a direction away from the substrate; and forming a second passivation layer on a rear surface of the substrate in a direction away from the substrate; forming a silicon oxynitride layer on a surface of the second passivation layer away from the substrate; forming at least one silicon nitride layer on a surface of the silicon oxynitride layer away from the substrate, wherein a ratio of a number of silicon atoms to a number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4, and a refractive index of the at least one silicon nitride layer is in a range of 1.9 to 2.5; and, printing a conductive paste on the surface of the at least one silicon nitride layer and sintering the conductive paste to form a second electrode wherein the second electrode penetrates through the second passivation layer, the silicon oxynitride layer and the at least one silicon nitride layer and forms an ohmic contact with the substrate; and wherein the second passivation layer comprises at least one aluminum oxide layer, wherein a ratio of a number of oxygen atoms to a number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6, a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm, and a refractive index of the at least one aluminum oxide layer is in a range of 1.4 to 1.6; wherein a number of silicon atoms is greater than a number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than a number of nitrogen atoms in the at least one silicon oxynitride layer, a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm, and a refractive index of the at least one silicon oxynitride layer is in a range of 1.5 to 1.8; wherein a thickness of the at least one silicon nitride layer is in a range of 50 nm to 100 nm. providing a substrate; forming a first passivation layer, a first anti-reflection layer and a first electrode sequentially on a front surface of the substrate in a direction away from the substrate; and forming a second passivation layer on a rear surface of the substrate in a direction away from the substrate; forming a silicon oxynitride layer on a surface of the second passivation layer away from the substrate; forming at least one silicon nitride layer on a surface of the silicon oxynitride layer away from the substrate, wherein a ratio of a number of silicon atoms to a number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4, and a refractive index of the at least one silicon nitride layer is in a range of 1.9 to 2.5; and, printing a conductive paste on the surface of the at least one silicon nitride layer and sintering the conductive paste to form a second electrode wherein the second electrode penetrates through the second passivation layer, the silicon oxynitride layer and the at least one silicon nitride layer and forms an ohmic contact with the substrate; and wherein the second passivation layer comprises at least one aluminum oxide layer, wherein a ratio of a number of oxygen atoms to a number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6, a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm, and a refractive index of the at least one aluminum oxide layer is in a range of 1.4 to 1.6; wherein a number of silicon atoms is greater than a number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than a number of nitrogen atoms in the at least one silicon oxynitride layer, a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm, and a refractive index of the at least one silicon oxynitride layer is in a range of 1.5 to 1.8; wherein a thickness of the at least one silicon nitride layer is in a range of 50 nm to 100 nm.