Method of manufacturing a photodetecting device, comprising sequentially the following steps: (a) providing a first wafer comprising the following steps: - forming a photosensitive layer made of a material chosen from semiconductor materials, on a first substrate; - forming a first electrode layer made of a transparent electrical conductive material, such as ITO, on the photosensitive layer; - bonding the photosensitive layer having the first electrode layer thereon with a holding substrate made of a transparent material, such as quartz or glass from the photosensitve side of the photosensitive layer; - removing the first substrate; - forming a second electrode layer made of an electrical conductive material on the photosensitive layer; (b) providing a second wafer by forming a circuit layer including electronic components on a second substrate, (c) forming a field isolation layer covering the second electrode layer or the circuit layer; (d) bonding the first wafer and the second wafer so as to form a structure comprising successively the circuit layer, the field isolation layer, the second electrode layer, the photosensitive layer, the first electrode layer and the holding substrate; (e) removing the said second substrate; (f) forming electrically conductive via so as to electrically connect the photosensitive layer to inputs of some electronic components of the circuit layer. (a) providing a first wafer comprising the following steps: - forming a photosensitive layer made of a material chosen from semiconductor materials, on a first substrate; - forming a first electrode layer made of a transparent electrical conductive material, such as ITO, on the photosensitive layer; - bonding the photosensitive layer having the first electrode layer thereon with a holding substrate made of a transparent material, such as quartz or glass from the photosensitve side of the photosensitive layer; - removing the first substrate; - forming a second electrode layer made of an electrical conductive material on the photosensitive layer; - forming a photosensitive layer made of a material chosen from semiconductor materials, on a first substrate; - forming a first electrode layer made of a transparent electrical conductive material, such as ITO, on the photosensitive layer; - bonding the photosensitive layer having the first electrode layer thereon with a holding substrate made of a transparent material, such as quartz or glass from the photosensitve side of the photosensitive layer; - removing the first substrate; - forming a second electrode layer made of an electrical conductive material on the photosensitive layer; (b) providing a second wafer by forming a circuit layer including electronic components on a second substrate, (c) forming a field isolation layer covering the second electrode layer or the circuit layer; (d) bonding the first wafer and the second wafer so as to form a structure comprising successively the circuit layer, the field isolation layer, the second electrode layer, the photosensitive layer, the first electrode layer and the holding substrate; (e) removing the said second substrate; (f) forming electrically conductive via so as to electrically connect the photosensitive layer to inputs of some electronic components of the circuit layer.