An electronic device comprising a stack of layers stacked along a direction of stacking, the stack of layers comprising: - a first electrode, comprising at least one electrical contact, - one ferroelectric subassembly, the ferroelectric subassembly being in contact with the first electrode and having a ferroelectric polarization which can take a plurality of states, - a spin-polarization subassembly, the spin-polarization subassembly being adapted to spin-polarize a current flowing through the spin-polarization subassembly, at least one layer of the spin-polarization subassembly being made of ferromagnetic or ferrimagnetic material, - an interfacing subassembly arranged between the ferroelectric subassembly and the spin-polarization subassembly, the interfacing subassembly being adapted to inter-convert the spin-polarized current into the charge current depending on the ferroelectric polarization state of the ferroelectric subassembly, the ferroelectric subassembly and the interfacing subassembly, respectively, having a part (30, 34) superimposed along the direction of stacking, on the spin-polarization subassembly and a part (32, 36) not superimposed on the spin-polarization subassembly, at least one of the interfacing subassembly and the ferroelectric subassembly including a conductive layer suitable for forming an intermediate electrode, said intermediate electrode comprising an electrical contact for reading the state of polarization of the ferroelectric subassembly, and - a second electrode comprising at least two electrical contacts (C2, C3, C4) for reading the state of polarization of the ferroelectric subassembly, the contacts (C2, C3, C4) each extending along a respective main direction, at least two main directions being non-parallel to each other, the second electrode delimiting the spin-polarization subassembly, the contact of the first electrode making it possible to change the ferroelectric polarization state of the ferroelectric subassembly by application of a difference of potential between the contact and at least one of the contacts (C2, C3, C4) of the second electrode or of a difference of potential between the contact and the contact of the intermediate electrode. - a first electrode, comprising at least one electrical contact, - one ferroelectric subassembly, the ferroelectric subassembly being in contact with the first electrode and having a ferroelectric polarization which can take a plurality of states, - a spin-polarization subassembly, the spin-polarization subassembly being adapted to spin-polarize a current flowing through the spin-polarization subassembly, at least one layer of the spin-polarization subassembly being made of ferromagnetic or ferrimagnetic material, - an interfacing subassembly arranged between the ferroelectric subassembly and the spin-polarization subassembly, the interfacing subassembly being adapted to inter-convert the spin-polarized current into the charge current depending on the ferroelectric polarization state of the ferroelectric subassembly, the ferroelectric subassembly and the interfacing subassembly, respectively, having a part (30, 34) superimposed along the direction of stacking, on the spin-polarization subassembly and a part (32, 36) not superimposed on the spin-polarization subassembly, at least one of the interfacing subassembly and the ferroelectric subassembly including a conductive layer suitable for forming an intermediate electrode, said intermediate electrode comprising an electrical contact for reading the state of polarization of the ferroelectric subassembly, and - a second electrode comprising at least two electrical contacts (C2, C3, C4) for reading the state of polarization of the ferroelectric subassembly, the contacts (C2, C3, C4) each extending along a respective main direction, at least two main directions being non-parallel to each other, the second electrode delimiting the spin-polarization subassembly,