Integrated circuit arrangement, having an electrically insulating insulating region, and having at least one sequence of regions which forms a capacitor and which contains, in the order specified: an electrode region near the insulating region, a dielectric region, and an electrode region remote from the insulating region, the insulating region being part of an insulating layer arranged in a plane, the capacitor and at least one active component of the integrated circuit arrangement being arranged on the same side of the insulating layer, and the electrode region near the insulating region and the active region of the component being arranged in a plane which lies parallel to the plane in which the insulating layer is arranged, the component comprising at least one field-effect transistor, the channel region of which is the active region, the field-effect transistor containing at least one web, a plurality of control electrodes being arranged at mutually opposite sides of the web and being insulated electrically from the channel region by control electrode insulation regions (42, 44), a connecting region electrically connecting the control electrodes, and the control electrodes containing the same material as the electrode region remote from the insulating region, characterized in that the connecting region is isolated from the channel region by a thick insulating region (18, 20), which has an insulating thickness which is greater than the thickness of the control electrode insulation regions (42, 44), and in that the dielectric region and the electrode region remote from the insulating region are arranged at four or at five side areas or at more than five side areas of the electrode region near the insulating region. an electrode region near the insulating region, a dielectric region, and an electrode region remote from the insulating region, the insulating region being part of an insulating layer arranged in a plane, the capacitor and at least one active component of the integrated circuit arrangement being arranged on the same side of the insulating layer, and the electrode region near the insulating region and the active region of the component being arranged in a plane which lies parallel to the plane in which the insulating layer is arranged, the component comprising at least one field-effect transistor, the channel region of which is the active region, the field-effect transistor containing at least one web, a plurality of control electrodes being arranged at mutually opposite sides of the web and being insulated electrically from the channel region by control electrode insulation regions (42, 44), a connecting region electrically connecting the control electrodes, and the control electrodes containing the same material as the electrode region remote from the insulating region, characterized in that the connecting region is isolated from the channel region by a thick insulating region (18, 20), which has an insulating thickness which is greater than the thickness of the control electrode insulation regions (42, 44), and in that the dielectric region and the electrode region remote from the insulating region are arranged at four or at five side areas or at more than five side areas of the electrode region near the insulating region.