An integrated circuit, IC, package assembly (121, 308) comprising: a dielectric structure (123, 202, 309) coupled with a metal layer (316, 322), wherein the dielectric structure includes: a first dielectric layer (204, 312) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the first dielectric layer defines a first thickness, and wherein the first dielectric layer has a first dielectric loss tangent; and a second dielectric layer (206, 314) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the second dielectric layer defines a second thickness, wherein the second dielectric layer has a second dielectric loss tangent, and wherein the first dielectric layer is formed of a more polar material than the second dielectric layer, and a solder mask layer (310, 330) coupled with the dielectric structure, wherein the first side of the first dielectric layer is directly coupled with the second side of the second dielectric layer, the metal layer is coupled with the second side of the first dielectric layer, the first dielectric loss tangent is greater than the second dielectric loss tangent, and the first thickness is less than the second thickness. a dielectric structure (123, 202, 309) coupled with a metal layer (316, 322), wherein the dielectric structure includes: a first dielectric layer (204, 312) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the first dielectric layer defines a first thickness, and wherein the first dielectric layer has a first dielectric loss tangent; and a second dielectric layer (206, 314) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the second dielectric layer defines a second thickness, wherein the second dielectric layer has a second dielectric loss tangent, and wherein the first dielectric layer is formed of a more polar material than the second dielectric layer, and a solder mask layer (310, 330) coupled with the dielectric structure, a first dielectric layer (204, 312) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the first dielectric layer defines a first thickness, and wherein the first dielectric layer has a first dielectric loss tangent; and a second dielectric layer (206, 314) having a first side and a second side opposite to the first side, wherein a distance between the first and second sides of the second dielectric layer defines a second thickness, wherein the second dielectric layer has a second dielectric loss tangent, and wherein the first dielectric layer is formed of a more polar material than the second dielectric layer, and a solder mask layer (310, 330) coupled with the dielectric structure, wherein the first side of the first dielectric layer is directly coupled with the second side of the second dielectric layer, the metal layer is coupled with the second side of the first dielectric layer, the first dielectric loss tangent is greater than the second dielectric loss tangent, and the first thickness is less than the second thickness.