An integrated circuit structure, comprising: a support structure, having a first face and an opposing second face; an elongated channel structure of a channel material, the elongated structure provided over the second face of the support structure and having a long axis substantially parallel to the support structure; a transistor arrangement, having: a channel portion that includes a portion of the channel material, and a gate stack, at least partially wrapping around the channel portion; a power rail of an electrically conductive material, the power rail extending between the first face and the second face of the support structure and having a long axis substantially parallel to the long axis of the elongated channel structure; a first source or drain (S/D) region and a second S/D region in the channel material on either side of the channel portion; a trench contact, coupled to the first S/D region; and an electrically conductive via, coupled between the power rail and the trench contact, wherein, in a cross-section of the IC structure taken along a plane substantially perpendicular to each of the support structure and the long axis of the power rail and including the gate stack, a top of the power rail is closer to the first face of the support structure than a top of the gate stack by at least half of a dimension of the gate stack in the cross-section as measured in a direction substantially perpendicular to the support structure and the power rail is coupled to the first S/D region and wherein sidewalls of the electrically conductive via in planes substantially perpendicular to the long axis of the power rail are aligned with corresponding sidewalls of the trench contact. a support structure, having a first face and an opposing second face; an elongated channel structure of a channel material, the elongated structure provided over the second face of the support structure and having a long axis substantially parallel to the support structure; a transistor arrangement, having: a channel portion that includes a portion of the channel material, and a gate stack, at least partially wrapping around the channel portion; a power rail of an electrically conductive material, the power rail extending between the first face and the second face of the support structure and having a long axis substantially parallel to the long axis of the elongated channel structure; a first source or drain (S/D) region and a second S/D region in the channel material on either side of the channel portion; a trench contact, coupled to the first S/D region; and an electrically conductive via, coupled between the power rail and the trench contact, a channel portion that includes a portion of the channel material, and a gate stack, at least partially wrapping around the channel portion; a power rail of an electrically conductive material, the power rail extending between the first face and the second face of the support structure and having a long axis substantially parallel to the long axis of the elongated channel structure; a first source or drain (S/D) region and a second S/D region in the channel material on either side of the channel portion; a trench contact, coupled to the first S/D region; and an electrically conductive via, coupled between the power rail and the trench contact, wherein, in a cross-section of the IC structure taken along a plane substantially perpendicular to each of the support structure and the long axis of the power rail and including the gate stack, a top of the power rail is closer to the first face of the support structure than a top of the gate stack by at least half of a dimension of the gate stack in the cross-section as measured in a direction substantially perpendicular to the support structure and the power rail is coupled to the first S/D region and wherein sidewalls of the electrically conductive via in planes substantially perpendicular to the long axis of the power rail are aligned with corresponding sidewalls of the trench contact.