A light emitting diode comprising: a substrate; a light emitting structure below said substrate, wherein the light emitting structure includes at least a first conductive semiconductor layer disposed below the substrate, an active layer disposed below the first conductive semiconductor layer and a second conductive semiconductor layer disposed below the active layer, and in which at least one first contact area and at least one second contact area adjacent to the first contact area are defined; a reflective structure below the light emitting structure, the reflective structure including a plurality of layers having mutually different refractive indexes; a first electrode disposed in the first contact area; and a second electrode disposed in the second contact area, wherein each of the first electrode and the second electrode includes at least one electrode layer, and wherein the reflective structure is formed on a lower surface of the second conductive semiconductor layer between the first electrode and the second electrode, and the reflective structure has reflection and insulating properties, wherein the first electrode includes a circular first electrode layer disposed on a lower surface of the first conductive semiconductor layer and a second electrode layer disposed on a lower surface of the first electrode layer and the reflective structure, the second electrode includes a first electrode layer disposed on the lower surface of the second semiconductor layer and a second electrode layer on a lower surface of the first electrode layer, characterised in that the first electrode layer of the second electrode is circular, and in that a width of the second electrode layers (17, 25) is greater than a diameter of the respective first electrode layers (15, 23), wherein the second electrode layer of the second electrode covers the reflective structure. a substrate; a light emitting structure below said substrate, wherein the light emitting structure includes at least a first conductive semiconductor layer disposed below the substrate, an active layer disposed below the first conductive semiconductor layer and a second conductive semiconductor layer disposed below the active layer, and in which at least one first contact area and at least one second contact area adjacent to the first contact area are defined; a reflective structure below the light emitting structure, the reflective structure including a plurality of layers having mutually different refractive indexes; a first electrode disposed in the first contact area; and a second electrode disposed in the second contact area, wherein each of the first electrode and the second electrode includes at least one electrode layer, and wherein the reflective structure is formed on a lower surface of the second conductive semiconductor layer between the first electrode and the second electrode, and the reflective structure has reflection and insulating properties, wherein the first electrode includes a circular first electrode layer disposed on a lower surface of the first conductive semiconductor layer and a second electrode layer disposed on a lower surface of the first electrode layer and the reflective structure, the second electrode includes a first electrode layer disposed on the lower surface of the second semiconductor layer and a second electrode layer on a lower surface of the first electrode layer, characterised in that the first electrode layer of the second electrode is circular, and in that a width of the second electrode layers (17, 25) is greater than a diameter of the respective first electrode layers (15, 23), wherein the second electrode layer of the second electrode covers the reflective structure.