A light-emitting diode (100, 200) comprising: a compound semiconductor structure (120, 220) including a first N-type compound semiconductor layer (123, 223), an active layer (122, 222), and a P-type compound semiconductor layer (121, 221); a P-type electrode layer (150, 250) that is disposed on the P-type compound semiconductor layer (121, 221) and electrically connects with the P-type compound semiconductor layer (121, 221); at least one insulation wall (131, 132, 231) disposed on the compound semiconductor structure (120, 220) and the P-type electrode layer (150, 250); at least one N-type electrode layer (141, 142, 241) penetrating the at least one insulation wall (131, 132, 231); a conductive substrate (170, 270) in which at least one N-type electrode connecting layer (171, 172, 271) respectively corresponding to the N-type electrode layer (141, 142, 241) is separated from a P-type electrode connecting layer (173, 272, 273) corresponding to the P-type electrode layer (150, 250); a second N-type compound semiconductor layer (110, 210) overlying the first N-type compound semiconductor layer (123, 223) and the at least one insulation wall (131, 132, 231) and connecting the N-type electrode layer (141, 142, 241) to the first N-type compound semiconductor layer (123, 223); and a conductive adhesive layer (160, 260) provided on the conductive substrate (170, 270) so that the N-type electrode connecting layer (171, 172, 271) is respectively electrically connected to the N-type electrode layer (141, 142, 241) and the P-type electrode connecting layer (173, 272, 273) is electrically connected to the P-type electrode layer (150, 250); the light-emitting diode (100, 200) characterized in that the conductive substrate (170, 270) and the conductive adhesive layer (160, 260) include a plurality of partition walls (181, 182, 281, 282), wherein the partition walls (181, 182, 281, 282) are provided as penetrating the conductive substrate (170, 270) and the conductive adhesive layer (160, 260) thereby forming a plurality of holes (174, 175), wherein each of the plurality of holes (174, 175) is filled with an insulating material to form the partition walls (181, 182, 281, 282) separating the N-type electrode connecting layer (171, 172, 271) from the P-type electrode connecting layer (173, 272, 273) in order to prevent electrical conduction therebetween, and wherein the partition walls (181, 182, 281, 282) contact with the at least one insulation wall (131, 132, 231). a compound semiconductor structure (120, 220) including a first N-type compound semiconductor layer (123, 223), an active layer (122, 222), and a P-type compound semiconductor layer (121, 221); a P-type electrode layer (150, 250) that is disposed on the P-type compound semiconductor layer (121, 221) and electrically connects with the P-type compound semiconductor layer (121, 221); at least one insulation wall (131, 132, 231) disposed on the compound semiconductor structure (120, 220) and the P-type electrode layer (150, 250); at least one N-type electrode layer (141, 142, 241) penetrating the at least one insulation wall (131, 132, 231); a conductive substrate (170, 270) in which at least one N-type electrode connecting layer (171, 172, 271) respectively corresponding to the N-type electrode layer (141, 142, 241) is separated from a P-type electrode connecting layer (173, 272, 273) corresponding to the P-type electrode layer (150, 250); a second N-type compound semiconductor layer (110, 210) overlying the first N-type compound semiconductor layer (123, 223) and the at least one insulation wall (131, 132, 231) and connecting the N-type electrode layer (141, 142, 241) to the first N-type compound semiconductor layer (123, 223); and a conductive adhesive layer (160, 260) provided on the conductive substrate (170, 270) so that the N-type electrode connecting layer (171, 172, 271) is respectively electrically connected to the N-type electrode layer (141, 142, 241) and the P-type electrode connecting layer (173, 272, 273) is electrically connected to the P-type electrode layer (150, 250); the light-emitting diode (100, 200) characterized in that the conductive substrate (170, 270) and the conductive adhesive layer (160, 260) include a plurality of partition walls (181, 182, 281, 282), wherein the partition walls (181, 182, 281, 282) are provided as penetrating the conductive substrate (170, 270) and the conductive adhesive layer (160, 260) thereby forming a plurality of holes (174, 175), wherein each of the plurality of holes (174, 175) is filled with an insulating material to form the partition walls (181, 182, 281, 282) separating the N-type electrode connecting layer (171, 172, 271) from the P-type electrode connecting layer (173, 272, 273) in order to prevent electrical conduction therebetween, and wherein the partition walls (181, 182, 281, 282) contact with the at least one insulation wall (131, 132, 231).