A method of forming a metal containing film on a substrate, comprising: a) providing a reactor and at least one substrate disposed therein; b) introducing a metal containing precursor into the reactor, wherein the metal containing precursor comprises a precursor of the general formula: M(R 1 -N-C(R 2)=N-R 3) n (R 4 R 5 R 6 R 7 R 8 Cp) m L k wherein: - M is at least one member selected from the group consisting of: Ni; Co and Ru; - (R 1 -N-C(R 2)=N-R 3) is an amidine ligand; - (R 4 R 5 R 6 R 7 R 8 Cp) is a, substituted or unsubstituted, cyclopentadienyl ligand; - R 1, R 3, R 4, R 5, R 6, R 7, and R 8 are independently selected from H; a C1-C5 alkyl group; and Si(R') 3, where R' is independently selected from H, and a C1-C5 alkyl group; - R 2 is independently selected from H and a C1-C5 alkyl group; - L is a neutral ligand; - 1 ≤ m ≤ 4; - 1 ≤ n ≤ 4; and - 0 ≤ k ≤ 5; c) maintaining the reactor at a temperature of at least 100°C; and d) contacting the precursor with the substrate to form a metal containing film; and further comprising introducing at least one reducing gas into the reactor, wherein the reducing gas comprises at least one member selected from the group consisting of H 2; NH 3; SiH 4; Si 2 H 6; Si 3 H 8; SiH 2 Me 2, SiH 2 Et 2, N(SiH 3) 3, hydrogen radicals; and mixtures thereof; and wherein the metal containing precursor and the reducing gas are introduced into the chamber substantially simultaneously, and the chamber is configured for chemical vapor deposition or for plasma enhanced chemical vapor deposition. a) providing a reactor and at least one substrate disposed therein; b) introducing a metal containing precursor into the reactor, wherein the metal containing precursor comprises a precursor of the general formula: M(R 1 -N-C(R 2)=N-R 3) n (R 4 R 5 R 6 R 7 R 8 Cp) m L k wherein: - M is at least one member selected from the group consisting of: Ni; Co and Ru; - (R 1 -N-C(R 2)=N-R 3) is an amidine ligand; - (R 4 R 5 R 6 R 7 R 8 Cp) is a, substituted or unsubstituted, cyclopentadienyl ligand; - R 1, R 3, R 4, R 5, R 6, R 7, and R 8 are independently selected from H; a C1-C5 alkyl group; and Si(R') 3, where R' is independently selected from H, and a C1-C5 alkyl group; - R 2 is independently selected from H and a C1-C5 alkyl group; - L is a neutral ligand; - 1 ≤ m ≤ 4; - 1 ≤ n ≤ 4; and - 0 ≤ k ≤ 5; - M is at least one member selected from the group consisting of: Ni; Co and Ru; - (R 1 -N-C(R 2)=N-R 3) is an amidine ligand; - (R 4 R 5 R 6 R 7 R 8 Cp) is a, substituted or unsubstituted, cyclopentadienyl ligand; - R 1, R 3, R 4, R 5, R 6, R 7, and R 8 are independently selected from H; a C1-C5 alkyl group; and Si(R') 3, where R' is independently selected from H, and a C1-C5 alkyl group; - R 2 is independently selected from H and a C1-C5 alkyl group; - L is a neutral ligand; - 1 ≤ m ≤ 4; - 1 ≤ n ≤ 4; and - 0 ≤ k ≤ 5; c) maintaining the reactor at a temperature of at least 100°C; and d) contacting the precursor with the substrate to form a metal containing film; and further comprising introducing at least one reducing gas into the reactor, wherein the reducing gas comprises at least one member selected from the group consisting of H 2; NH 3; SiH 4; Si 2 H 6; Si 3 H 8; SiH 2 Me 2, SiH 2 Et 2, N(SiH 3) 3, hydrogen radicals; and mixtures thereof; and wherein the metal containing precursor and the reducing gas are introduced into the chamber substantially simultaneously, and the chamber is configured for chemical vapor deposition or for plasma enhanced chemical vapor deposition.