A semiconductor device comprising: a SiC semiconductor layer (27, 28); a plurality of cells that are formed in the SiC semiconductor layer (27, 28) and that are subjected to ON/OFF control by means of a predetermined control voltage; a control electrode that faces a channel region of the cells in which a channel is formed when turned on; a control pad that is exposed at a topmost surface for electric connection with an outside, the control pad being physically separated from the control electrode and being electrically connected to the control electrode; built-in resistors that are disposed below the control pad and that are made of polysilicon, the built-in resistors electrically connecting the control pad and the control electrode together; and a finger disposed on a surface of the SiC semiconductor layer (27,28) in the same way as the control pad and that extends from the control pad so as to partition a predetermined region, wherein the plurality of cells are arranged in a region partitioned by the finger, each of the built-in resistors connects the control pad and the finger together, a wire region selectively formed on a surface of the control pad for connecting a wire, each of the built-in resistors is linear along a part of the peripheral edge of the control pad, wherein the part of the peripheral edge of the control pad is disposed at a corner portion of the control pad, wherein the corner portion of the control pad avoids the wire region when planarly viewed from a normal direction of the SiC semiconductor layer, each of the built-in resistors is formed so as to cross and straddle a gap region between the control pad and the finger, the built-in resistors are disposed selectively in a region below the control pad, and the built-in resistors are arranged to be symmetric by disposing the built-in resistors at positions mutually substantially equally distant from the planarly shaped gravity center position of the control pad. a SiC semiconductor layer (27, 28); a plurality of cells that are formed in the SiC semiconductor layer (27, 28) and that are subjected to ON/OFF control by means of a predetermined control voltage; a control electrode that faces a channel region of the cells in which a channel is formed when turned on; a control pad that is exposed at a topmost surface for electric connection with an outside, the control pad being physically separated from the control electrode and being electrically connected to the control electrode; built-in resistors that are disposed below the control pad and that are made of polysilicon, the built-in resistors electrically connecting the control pad and the control electrode together; and a finger disposed on a surface of the SiC semiconductor layer (27,28) in the same way as the control pad and that extends from the control pad so as to partition a predetermined region, wherein the plurality of cells are arranged in a region partitioned by the finger, each of the built-in resistors connects the control pad and the finger together, a wire region selectively formed on a surface of the control pad for connecting a wire, each of the built-in resistors is linear along a part of the peripheral edge of the control pad, wherein the part of the peripheral edge of the control pad is disposed at a corner portion of the control pad, wherein the corner portion of the control pad avoids the wire region when planarly viewed from a normal direction of the SiC semiconductor layer, each of the built-in resistors is formed so as to cross and straddle a gap region between the control pad and the finger, the built-in resistors are disposed selectively in a region below the control pad, and the built-in resistors are arranged to be symmetric by disposing the built-in resistors at positions mutually substantially equally distant from the planarly shaped gravity center position of the control pad.