A complementary metal oxide semiconductor, CMOS, image sensor, comprising: a first plurality of pixel units wherein pixel units are arranged in lattice manner, and the pixel unit is obtained by rotating a rectangular area including four sets of photodiodes and transfer gates, TXs, and one charge accumulation portion by 45 degrees, wherein the four sets of photodiodes shares the one charge accumulation portion, and comprises two photodiodes in a vertical direction and two photodiodes in a horizontal direction, and a second plurality of pixel units arranged at positions which are shifted in the horizontal direction by half of a distance between centers of adjacent pixel units in the horizontal direction and shifted in the vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units included in the first plurality of pixel units; wherein gates of the TXs at corresponding positions of the first pixel unit, the second pixel unit adjacent to the first pixel unit in an oblique direction, and a third pixel unit adjacent to the first pixel unit in the horizontal direction and adjacent to the second pixel unit in the oblique direction are connected in sequence with wires in the oblique directions; wherein gates of the TXs at corresponding positions of the third pixel unit and a fourth pixel unit adjacent to the third pixel unit in the horizontal direction at the other side of the first pixel unit are connected with a wire in the horizontal direction; wherein the wires in the oblique directions are repeated in a zigzag manner except for the case where the TXs of the pixel units are connected with the wire in the horizontal direction; wherein the pixel units in the CMOS image sensor are paired in the vertical direction, and the charge accumulation portions of each pair are connected to one output circuit that converts a voltage of the charge accumulation portion to a vertical signal line, Vsig, and one Vsig is provided for each column of the pixel units in the vertical direction; and wherein each pair of the pixel units verge corner to corner. a first plurality of pixel units wherein pixel units are arranged in lattice manner, and the pixel unit is obtained by rotating a rectangular area including four sets of photodiodes and transfer gates, TXs, and one charge accumulation portion by 45 degrees, wherein the four sets of photodiodes shares the one charge accumulation portion, and comprises two photodiodes in a vertical direction and two photodiodes in a horizontal direction, and a second plurality of pixel units arranged at positions which are shifted in the horizontal direction by half of a distance between centers of adjacent pixel units in the horizontal direction and shifted in the vertical direction by half of the distance between the centers of the adjacent pixel units in the vertical direction from the positions of the respective pixel units included in the first plurality of pixel units; wherein gates of the TXs at corresponding positions of the first pixel unit, the second pixel unit adjacent to the first pixel unit in an oblique direction, and a third pixel unit adjacent to the first pixel unit in the horizontal direction and adjacent to the second pixel unit in the oblique direction are connected in sequence with wires in the oblique directions; wherein gates of the TXs at corresponding positions of the third pixel unit and a fourth pixel unit adjacent to the third pixel unit in the horizontal direction at the other side of the first pixel unit are connected with a wire in the horizontal direction; wherein the wires in the oblique directions are repeated in a zigzag manner except for the case where the TXs of the pixel units are connected with the wire in the horizontal direction; wherein the pixel units in the CMOS image sensor are paired in the vertical direction, and the charge accumulation portions of each pair are connected to one output circuit that converts a voltage of the charge accumulation portion to a vertical signal line, Vsig, and one Vsig is provided for each column of the pixel units in the vertical direction; and wherein each pair of the pixel units verge corner to corner.