Stack-shaped high-blocking III-V semiconductor power diode, comprising - an at least regionally formed first metallic terminal contact layer, - a highly doped semi-conductor contact region (PPL, NPL) of a first conductivity type with a doping substance concentration greater than 1•10 18 N/cm 3 and with a first lattice constant, - a doped intermediate layer (PMI, NMI) of a first conductivity type with a doping substance concentration less than 5•10 15 N/cm 3, with the first lattice constant and with a thickness between 1 μm and 30 μm, - a drift layer (NMID, PMID) of a second conductivity type with the first lattice constant and with a layer thickness greater than 10 μm, - the doping substance concentration of the intermediate layer is greater than the doping substance concentration of the drift layer, - a highly doped metamorphic buffer layer sequence (NMP, PMP) of the second conductivity type with a layer thickness above 0.2 μm and less than 20 μm, wherein the metamorphic buffer layer sequence (NMP, PMP) has an upper side with the first lattice constant and a lower side with a second lattice constant and the upper side is arranged in the direction of the drift layer (NMID, PMID), and - the first lattice constant is greater than the second lattice constant, and - a second metallic terminal contact layer formed below the lower side of the metamorphic buffer layer sequence (NMP, PMP), and - the aforesaid regions and layers are arranged in the stated sequence, and - the second metallic terminal contact layer is connected by material bond with a semiconductor contact layer, and - at least the highly doped semiconductor contact region (PPL, NPL) and the drift layer (NMID, PMID) and the metamorphic buffer layer sequence (NMP, PMP) comprise a III-V compound or consist of a III-V compound, and a substrate layer of the same conductivity type as the metamorphic buffer layer sequence is provided below the metamorphic buffer layer sequence (NMP, PMP) and the substrate layer has the second lattice constant and comprises Ge or GaAs or InP or consists of Ge or GaAs or InP. - an at least regionally formed first metallic terminal contact layer, - a highly doped semi-conductor contact region (PPL, NPL) of a first conductivity type with a doping substance concentration greater than 1•10 18 N/cm 3 and with a first lattice constant, - a doped intermediate layer (PMI, NMI) of a first conductivity type with a doping substance concentration less than 5•10 15 N/cm 3, with the first lattice constant and with a thickness between 1 μm and 30 μm, - a drift layer (NMID, PMID) of a second conductivity type with the first lattice constant and with a layer thickness greater than 10 μm, - the doping substance concentration of the intermediate layer is greater than the doping substance concentration of the drift layer, - a highly doped metamorphic buffer layer sequence (NMP, PMP) of the second conductivity type with a layer thickness above 0.2 μm and less than 20 μm, wherein the metamorphic buffer layer sequence (NMP, PMP) has an upper side with the first lattice constant and a lower side with a second lattice constant and the upper side is arranged in the direction of the drift layer (NMID, PMID), and - the first lattice constant is greater than the second lattice constant, and - a second metallic terminal contact layer formed below the lower side of the metamorphic buffer layer sequence (NMP, PMP), and - the aforesaid regions and layers are arranged in the stated sequence, and - the second metallic terminal contact layer is connected by material bond with a semiconductor contact layer, and - at least the highly doped semiconductor contact region (PPL, NPL) and the drift layer (NMID, PMID) and the metamorphic buffer layer sequence (NMP, PMP) comprise a III-V compound or consist of a III-V compound, and