An imaging element comprising: a photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a reset voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit, wherein the charge accumulation unit includes a plurality of regions (53-2-4, 53-1-3), wherein the plurality of regions (53-2-4, 53-1-3) included in the charge accumulation unit are provided in a substrate in which the photoelectric conversion unit is provided, wherein first wirings (431, 432) connecting the plurality of regions (53-2-4, 53-1-3) are provided in a first wiring layer stacked on the substrate, wherein second wirings forming some of the charge accumulation units are provided in a second layer different from the first layer in which the first wirings (431, 432) connecting the plurality of regions (53-2-4, 53-1-3) are provided, and wherein, in the first wiring layer and the second wiring layer, third wirings (433, 434, 442) are provided, a first one of the third wirings (433, 434, 442) being formed in the first wiring layer and connected to a first via and a contact formed between the reset unit and the reset voltage control unit, a second one of the third wirings (433, 434, 442) being formed in the first wiring layer and connected to a second via, and a third one of the third wirings (433, 434, 442) being formed in the second wiring layer and connected to the first via and the second via, and wherein the first one of the third wirings (433, 43, 442), the first via, the third one of the third wirings (433, 434, 442), the second via, and the second one of the third wirings (433, 434, 442) are forming a parasitic capacitance (C_ST) with grounding at the contact formed between the reset unit and the reset voltage control unit. a photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a reset voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit, wherein the charge accumulation unit includes a plurality of regions (53-2-4, 53-1-3), wherein the plurality of regions (53-2-4, 53-1-3) included in the charge accumulation unit are provided in a substrate in which the photoelectric conversion unit is provided, wherein first wirings (431, 432) connecting the plurality of regions (53-2-4, 53-1-3) are provided in a first wiring layer stacked on the substrate, wherein second wirings forming some of the charge accumulation units are provided in a second layer different from the first layer in which the first wirings (431, 432) connecting the plurality of regions (53-2-4, 53-1-3) are provided, and wherein, in the first wiring layer and the second wiring layer, third wirings (433, 434, 442) are provided, a first one of the third wirings (433, 434, 442) being formed in the first wiring layer and connected to a first via and a contact formed between the reset unit and the reset voltage control unit, a second one of the third wirings (433, 434, 442) being formed in the first wiring layer and connected to a second via, and a third one of the third wirings (433, 434, 442) being formed in the second wiring layer and connected to the first via and the second via, and wherein the first one of the third wirings (433, 43, 442), the first via, the third one of the third wirings (433, 434, 442), the second via, and the second one of the third wirings (433, 434, 442) are forming a parasitic capacitance (C_ST) with grounding at the contact formed between the reset unit and the reset voltage control unit.