A method for forming an electrical structure comprising: providing a semiconductor first device wafer containing first electrical components, the first device wafer having first electrodes on a first side of the first device wafer; depositing a first metal layer on the first side of the first device wafer and on the first electrodes, thereby providing metal bonds between the first metal layer and the first device wafer; depositing a second metal layer on a carrier wafer, thereby providing metal bonds between the second metal layer and the carrier wafer; and bonding the first metal layer to the second metal layer using heat and pressure, thereby bonding the carrier wafer to the first side of the first device wafer using a first bonding material, wherein the first bonding material comprises the first metal layer and the second metal layer bonded together, wherein a metal-metal bond is formed between the first metal layer and the second metal layer; processing a second side of the first device wafer while the carrier wafer is bonded to the first device wafer; passing light from a laser through the carrier wafer to impinge on the first bonding material, wherein a laser beam is scanned over the carrier wafer, the first bonding material absorbing energy from the laser beam, the carrier wafer being transparent to the light from the laser, wherein the first bonding material releases the carrier wafer from the first device wafer due to energy in the light from the laser breaking the metal bonds between the second metal layer and the carrier wafer; removing the carrier wafer from the first device wafer; and removing any residual first bonding material from the first device wafer. providing a semiconductor first device wafer containing first electrical components, the first device wafer having first electrodes on a first side of the first device wafer; depositing a first metal layer on the first side of the first device wafer and on the first electrodes, thereby providing metal bonds between the first metal layer and the first device wafer; depositing a second metal layer on a carrier wafer, thereby providing metal bonds between the second metal layer and the carrier wafer; and bonding the first metal layer to the second metal layer using heat and pressure, thereby bonding the carrier wafer to the first side of the first device wafer using a first bonding material, wherein the first bonding material comprises the first metal layer and the second metal layer bonded together, wherein a metal-metal bond is formed between the first metal layer and the second metal layer; processing a second side of the first device wafer while the carrier wafer is bonded to the first device wafer; passing light from a laser through the carrier wafer to impinge on the first bonding material, wherein a laser beam is scanned over the carrier wafer, the first bonding material absorbing energy from the laser beam, the carrier wafer being transparent to the light from the laser, wherein the first bonding material releases the carrier wafer from the first device wafer due to energy in the light from the laser breaking the metal bonds between the second metal layer and the carrier wafer; removing the carrier wafer from the first device wafer; and removing any residual first bonding material from the first device wafer.