Method for singulating a semiconductor component (1a, 1b, 1c, 1d, 1e) having a pn junction (4a, 4b, 4c), comprising the following method steps A. providing a semiconductor component (1a, 1b, 1c, 1d, 1e) which has at least one emitter (2a, 2b, 2c) and at least one base (3a, 3b, 3c, 3d, 3e), with a pn junction (4a, 4b, 4c) formed between the emitter (2a, 2b, 2c) and the base (3a, 3b, 3c, 3d, 3e), and has a non-metallic transverse-conduction layer for transverse-conductance of majority charge carriers of the emitter (2a, 2b, 2c), the emitter (2a, 2b, 2c) comprising the transverse-conduction layer and/or the transverse-conduction layer being formed in parallel with the emitter (2a, 2b, 2c) and being electrically conductively connected thereto, B. singulating the semiconductor component (1a, 1b, 1c, 1d, 1e) by separating it into at least two sub-components on at least one separating surface, in that between method steps A and B, in a method step B0, a transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is formed in the transverse-conduction layer in order to reduce the transverse-conduction capability by at least a factor of 10 and in that in method step B, the separating surface adjoins and/or penetrates the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e), characterised in that the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is designed as a separating trench, the separating trench completely penetrating the transverse-conduction layer, in that the separation trench is formed so as to penetrate the pn junction (4a, 4b, 4c), in that between method steps B0 and B, in a method step B1, a passivation layer is applied in the separation trench, which covers at least the pn junction (4a, 4b, 4c) adjoining the separation trench, in that in method step B the singulation is carried out by means of thermal laser separation (TLS, LIC or LDC) and in that method step B0 is carried out before applying one or a plurality of metal contact structures. A. providing a semiconductor component (1a, 1b, 1c, 1d, 1e) which has at least one emitter (2a, 2b, 2c) and at least one base (3a, 3b, 3c, 3d, 3e), with a pn junction (4a, 4b, 4c) formed between the emitter (2a, 2b, 2c) and the base (3a, 3b, 3c, 3d, 3e), and has a non-metallic transverse-conduction layer for transverse-conductance of majority charge carriers of the emitter (2a, 2b, 2c), the emitter (2a, 2b, 2c) comprising the transverse-conduction layer and/or the transverse-conduction layer being formed in parallel with the emitter (2a, 2b, 2c) and being electrically conductively connected thereto, B. singulating the semiconductor component (1a, 1b, 1c, 1d, 1e) by separating it into at least two sub-components on at least one separating surface, in that between method steps A and B, in a method step B0, a transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is formed in the transverse-conduction layer in order to reduce the transverse-conduction capability by at least a factor of 10 and in that in method step B, the separating surface adjoins and/or penetrates the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e), characterised in that the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is designed as a separating trench, the separating trench completely penetrating the transverse-conduction layer, in that the separation trench is formed so as to penetrate the pn junction (4a, 4b, 4c), in that between method steps B0 and B, in a method step B1, a passivation layer is applied in the separation trench, which covers at least the pn junction (4a, 4b, 4c) adjoining the separation trench, in that in method step B the singulation is carried out by means of thermal laser separation (TLS, LIC or LDC) and in that method step B0 is carried out before applying one or a plurality of metal contact structures. in that between method steps A and B, in a method step B0, a transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is formed in the transverse-conduction layer in order to reduce the transverse-conduction capability by at least a factor of 10 and in that in method step B, the separating surface adjoins and/or penetrates the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e), characterised in that the transverse-conduction avoidance region (5a, 5b, 5c, 5d, 5e) is designed as a separating trench, the separating trench completely penetrating the transverse-conduction layer, in that the separation trench is formed so as to penetrate the pn junction (4a, 4b, 4c), in that between method steps B0 and B, in a method step B1, a passivation layer is applied in the separation trench, which covers at least the pn junction (4a, 4b, 4c) adjoining the separation trench, in that in method step B the singulation is carried out by means of thermal laser separation (TLS, LIC or LDC) and in that method step B0 is carried out before applying one or a plurality of metal contact structures.