A light emitting diode module comprising: a circuit substrate; terminal electrodes including a first terminal and a second terminal; a first LED array constructed from a series of connected LED dies mounted directly in bare chip form on one surface of said circuit substrate, and arranged so as to form a series circuit, and connected to said first terminal; a second LED array constructed from a series of connected LED dies mounted directly in bare chip form on one surface of said circuit substrate, and arranged so as to form a series circuit, and connected in series to said first LED array; a bypass circuit connected to said first LED array, wherein said bypass circuit includes a first depletion-mode field effect transistor die (15, 341) mounted directly bare chip form on said one surface of the circuit substrate and a first current sensing resistor (14, 343, 742, 743); a dam (12, 20) formed on said circuit substrate so as to enclose an LED block region where said first and second LED arrays (33, 35) are mounted and a circuit block region where said first FET die (15, 341) and said first current sensing resistor (14, 343, 742, 743) are mounted, wherein said dam (12, 20) includes a first dam of circular shape enclosing said LED block region and a second dam of rectangular shape, where the circuit block region is enclosed by the second dam and a portion of the first dam; a same phosphor containing fluorescent resin (26, 27) for covering said LED block region and said circuit block region; and a constant current circuit which includes a second depletion-mode field effect transistor die (15, 361) mounted directly in bare chip form on said one surface of the circuit substrate and a second current sensing resistor (14, 363, 762, 763); wherein a drain of said first FET die (15, 341) is connected to said first LED array, a source of said first FET die is connected to one port of said first current sensing resistor (14, 343), and a gate of said first FET die (15, 341) is connected to another port of said first current sensing resistor (14, 343), wherein said first current sensing resistor (14, 343, 742, 743) is arranged so that both of the current outputted from said source of said first FET die (15, 341) and the current outputted from said second LED array follow into said first current sensing resistor (14, 343, 742, 743), and wherein a drain of said second FET die (15, 361) is connected to said second LED array, a source of said second FET die (15, 361) is connected to one port of said second current sensing resistor (14, 363, 762, 763), a gate of said second FET die (15, 361) is connected to another port of said second current sensing resistor (14, 363, 742, 743), and said second current sensing resistor (14, 363, 762, 763) connects to said first current sensing resistor (14, 343, 742, 743) of said bypass circuit. a circuit substrate; terminal electrodes including a first terminal and a second terminal; a first LED array constructed from a series of connected LED dies mounted directly in bare chip form on one surface of said circuit substrate, and arranged so as to form a series circuit, and connected to said first terminal; a second LED array constructed from a series of connected LED dies mounted directly in bare chip form on one surface of said circuit substrate, and arranged so as to form a series circuit, and connected in series to said first LED array; a bypass circuit connected to said first LED array, wherein said bypass circuit includes a first depletion-mode field effect transistor die (15, 341) mounted directly bare chip form on said one surface of the circuit substrate and a first current sensing resistor (14, 343, 742, 743); a dam (12, 20) formed on said circuit substrate so as to enclose an LED block region where said first and second LED arrays (33, 35) are mounted and a circuit block region where said first FET die (15, 341) and said first current sensing resistor (14, 343, 742, 743) are mounted, wherein said dam (12, 20) includes a first dam of circular shape enclosing said LED block region and a second dam of rectangular shape, where the circuit block region is enclosed by the second dam and a portion of the first dam; a same phosphor containing fluorescent resin (26, 27) for covering said LED block region and said circuit block region; and a constant current circuit which includes a second depletion-mode field effect transistor die (15, 361) mounted directly in bare chip form on said one surface of the circuit substrate and a second current sensing resistor (14, 363, 762, 763); wherein a drain of said first FET die (15, 341) is connected to said first LED array, a source of said first FET die is connected to one port of said first current sensing resistor (14, 343), and a gate of said first FET die (15, 341) is connected to another port of said first current sensing resistor (14, 343), wherein said first current sensing resistor (14, 343, 742, 743) is arranged so that both of the current outputted from said source of said first FET die (15, 341) and the current outputted from said second LED array follow into said first current sensing resistor (14, 343, 742, 743), and wherein a drain of said second FET die (15, 361) is connected to said second LED array, a source of said second FET die (15, 361) is connected to one port of said second current sensing resistor (14, 363, 762, 763), a gate of said second FET die (15, 361) is connected to another port of said second current sensing resistor (14, 363, 742, 743), and said second current sensing resistor (14, 363, 762, 763) connects to said first current sensing resistor (14, 343, 742, 743) of said bypass circuit.