A semiconductor light emitting element comprising: a first semiconductor layer of a first conductivity type; a pit formation layer formed on said first semiconductor layer and having a pyramidal pit caused by a threading dislocation generated in said first semiconductor layer; an active layer formed on said pit formation layer and made of InGaN-based semiconductor materials, said active layer having a multi-quantum well structure having well layers (W(n)) and barrier layers (B(n)) that are laminated alternately in which each well layer and each barrier layer lie one upon another, and said active layer having a flat portion and an embedded portion which is formed so as to embed said pit; and a second semiconductor layer formed on said active layer and having a second conductivity type which is opposite to the first conductivity type, characterized in that said flat portion has flat well portions (FW(n)) corresponding to said well layers (W(n)), said embedded portion has embedded well portions (IW(n)) corresponding to said well layers (W(n)), each of said embedded well portions (IW(n)) has ring portions (RW(n)) each of which is formed in an interface with each of said flat well portions (FW(n)) so as to surround said threading dislocation, each of said ring portions (RW(n)) has a band gap smaller than that of each of said flat well portions (FW(n)), each of said ring portions (RW(n)) has a thickness larger than a thickness of each of said flat well portions (FW(n)) corresponding to each of said ring portions (RW(n)), said embedded portion has embedded barrier portions (IB(n)) corresponding to said barrier layers (B(n)), said embedded well portions (IW(n)) and said embedded barrier portions (IB(n)) are configured such that a facet upper end of one of said embedded well portions (IW(n)) is formed at a position closer to a center of said pit than a facet upper end of an adjacent one of said embedded barrier portions (IB(n)), wherein the one embedded well portion (IW(n)) is subsequently formed on the adjacent embedded barrier portion (IB(n)). a first semiconductor layer of a first conductivity type; a pit formation layer formed on said first semiconductor layer and having a pyramidal pit caused by a threading dislocation generated in said first semiconductor layer; an active layer formed on said pit formation layer and made of InGaN-based semiconductor materials, said active layer having a multi-quantum well structure having well layers (W(n)) and barrier layers (B(n)) that are laminated alternately in which each well layer and each barrier layer lie one upon another, and said active layer having a flat portion and an embedded portion which is formed so as to embed said pit; and said active layer having a multi-quantum well structure having well layers (W(n)) and barrier layers (B(n)) that are laminated alternately in which each well layer and each barrier layer lie one upon another, and said active layer having a flat portion and an embedded portion which is formed so as to embed said pit; and a second semiconductor layer formed on said active layer and having a second conductivity type which is opposite to the first conductivity type, characterized in that said flat portion has flat well portions (FW(n)) corresponding to said well layers (W(n)), said embedded portion has embedded well portions (IW(n)) corresponding to said well layers (W(n)), each of said embedded well portions (IW(n)) has ring portions (RW(n)) each of which is formed in an interface with each of said flat well portions (FW(n)) so as to surround said threading dislocation, each of said ring portions (RW(n)) has a band gap smaller than that of each of said flat well portions (FW(n)), each of said ring portions (RW(n)) has a thickness larger than a thickness of each of said flat well portions (FW(n)) corresponding to each of said ring portions (RW(n)), said embedded portion has embedded barrier portions (IB(n)) corresponding to said barrier layers (B(n)), said embedded well portions (IW(n)) and said embedded barrier portions (IB(n)) are configured such that a facet upper end of one of said embedded well portions (IW(n)) is formed at a position closer to a center of said pit than a facet upper end of an adjacent one of said embedded barrier portions (IB(n)), wherein the one embedded well portion (IW(n)) is subsequently formed on the adjacent embedded barrier portion (IB(n)).