Field effect-controllable vertical semiconductor component consisting of a semiconductor body having an edge region, I. comprising an inner zone of the first conduction type, which adjoins a surface of the semiconductor body, II. comprising a drain zone, which on one side adjoins the inner zone and which on the other side adjoins the opposite surface of the semiconductor body, III. comprising at least one base zone of the second conduction type, which is embedded into the semiconductor body at the surface, IV. comprising at least one source zone of the first conduction type, which is embedded in each case into the base zone at the surface, and V. comprising at least one source electrode, which in each case makes contact with at least one base zone and the source zone embedded therein, and VI. comprising at least one gate electrode which is insulated from the entire semiconductor body and from the source electrode, VII. comprising at least one depletion zone of the second conduction type in the inner zone, VIII. comprising at least one complementary depletion zone of the first conduction type in the inner zone, wherein the total amount of the doping of the depletion zones approximately corresponds to the total amount of the doping of the complementary depletion zones, IX. characterized in that there is arranged in the edge region of the semiconductor body at least one depletion zone (96*) which is more weakly doped than the at least one depletion zone in the inner zone, and there is arranged in the edge region at least one complementary depletion zone (95*) which is more weakly doped than the at least one complementary depletion zone in the inner zone. I. comprising an inner zone of the first conduction type, which adjoins a surface of the semiconductor body, II. comprising a drain zone, which on one side adjoins the inner zone and which on the other side adjoins the opposite surface of the semiconductor body, III. comprising at least one base zone of the second conduction type, which is embedded into the semiconductor body at the surface, IV. comprising at least one source zone of the first conduction type, which is embedded in each case into the base zone at the surface, and V. comprising at least one source electrode, which in each case makes contact with at least one base zone and the source zone embedded therein, and VI. comprising at least one gate electrode which is insulated from the entire semiconductor body and from the source electrode, VII. comprising at least one depletion zone of the second conduction type in the inner zone, VIII. comprising at least one complementary depletion zone of the first conduction type in the inner zone, wherein the total amount of the doping of the depletion zones approximately corresponds to the total amount of the doping of the complementary depletion zones, IX. characterized in that there is arranged in the edge region of the semiconductor body at least one depletion zone (96*) which is more weakly doped than the at least one depletion zone in the inner zone, and there is arranged in the edge region at least one complementary depletion zone (95*) which is more weakly doped than the at least one complementary depletion zone in the inner zone.