A method for fabricating a microelectronic module, comprising: embedding a sinter-bonded heat dissipation structure (16, 52, 124) in a module substrate (12, 54, 112) by: applying a sinter precursor material containing metal particles into a cavity (20, 60, 118) provided in the module substrate (12, 54, 112); and sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body (66, 124) bonded to the module substrate (12, 54, 112); and attaching a microelectronic device (28, 100, 126) and a heatsink (18, 64, 132) to the module substrate (12, 54, 112) before, after, or concurrent with sintering, the heatsink (18, 64, 132) thermally coupled to the microelectronic device (28, 100, 126) through the sinter-bonded heat dissipation structure (16, 52, 124)), wherein embedding the sinter-bonded heat dissipation structure (16, 52, 124) in the module substrate (12, 54, 112) further comprises: positioning a thermal conduit in the cavity (20, 60, 118), the thermal conduit comprising one of a slug (14, 122) having a thermal conductivity exceeding the thermal conductivity of the module substrate (12, 54, 112) and an elongated heat pipe configured for transferring heat from a first end portion to a second end portion of the elongated heat pipe; and forming the sintered metal body (66, 124) to bond the thermal conduit to the module substrate (12, 54, 112). embedding a sinter-bonded heat dissipation structure (16, 52, 124) in a module substrate (12, 54, 112) by: applying a sinter precursor material containing metal particles into a cavity (20, 60, 118) provided in the module substrate (12, 54, 112); and sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body (66, 124) applying a sinter precursor material containing metal particles into a cavity (20, 60, 118) provided in the module substrate (12, 54, 112); and sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body (66, 124) bonded to the module substrate (12, 54, 112); and attaching a microelectronic device (28, 100, 126) and a heatsink (18, 64, 132) to the module substrate (12, 54, 112) before, after, or concurrent with sintering, the heatsink (18, 64, 132) thermally coupled to the microelectronic device (28, 100, 126) through the sinter-bonded heat dissipation structure (16, 52, 124)), wherein embedding the sinter-bonded heat dissipation structure (16, 52, 124) in the module substrate (12, 54, 112) further comprises: positioning a thermal conduit in the cavity (20, 60, 118), the thermal conduit comprising one of a slug (14, 122) having a thermal conductivity exceeding the thermal conductivity of the module substrate (12, 54, 112) and an elongated heat pipe configured for transferring heat from a first end portion to a second end portion of the elongated heat pipe; and attaching a microelectronic device (28, 100, 126) and a heatsink (18, 64, 132) to the module substrate (12, 54, 112) before, after, or concurrent with sintering, the heatsink (18, 64, 132) thermally coupled to the microelectronic device (28, 100, 126) through the sinter-bonded heat dissipation structure (16, 52, 124)), wherein embedding the sinter-bonded heat dissipation structure (16, 52, 124) in the module substrate (12, 54, 112) further comprises: positioning a thermal conduit in the cavity (20, 60, 118), the thermal conduit comprising one of a slug (14, 122) having a thermal conductivity exceeding the thermal conductivity of the module substrate (12, 54, 112) and an elongated heat pipe configured for transferring heat from a first end portion to a second end portion of the elongated heat pipe; and forming the sintered metal body (66, 124) to bond the thermal conduit to the module substrate (12, 54, 112).