A semiconductor device fabrication process, comprising: providing a transistor comprising a plurality of replacement metal gates on a semiconductor substrate with first gates having sources and drains and at least one second gate being isolated from the first gates, wherein the transistor comprises gate spacers of a first insulating material around each first gate and a first insulating layer of a second insulating material between the gate spacers, and wherein at least some of the second insulating material overlies sources and drains of the first gates; wherein the process further comprises: forming one or more insulating mandrels aligned over the first gates and the second gates, wherein the insulating mandrels comprise the first insulating material; forming mandrel spacers around each insulating mandrel, wherein the mandrel spacers comprise the first insulating material; forming a second insulating layer of the second insulating material over the transistor; forming one or more first trenches to the sources and drains of the first gates by removing the second insulating material from portions of the transistor between the insulating mandrels; forming a second trench to the second gate by removing portions of the first insulating material and the second insulating material above the second gate, wherein removing portions of the first insulating material comprises removing portions of the insulating mandrel aligned over the second gate; and filling the first trenches and the second trench with conductive material to form first contacts to the sources and drains of the first gates and a second contact to the second gate. providing a transistor comprising a plurality of replacement metal gates on a semiconductor substrate with first gates having sources and drains and at least one second gate being isolated from the first gates, wherein the transistor comprises gate spacers of a first insulating material around each first gate and a first insulating layer of a second insulating material between the gate spacers, and wherein at least some of the second insulating material overlies sources and drains of the first gates; wherein the process further comprises: forming one or more insulating mandrels aligned over the first gates and the second gates, wherein the insulating mandrels comprise the first insulating material; forming mandrel spacers around each insulating mandrel, wherein the mandrel spacers comprise the first insulating material; forming a second insulating layer of the second insulating material over the transistor; forming one or more first trenches to the sources and drains of the first gates by removing the second insulating material from portions of the transistor between the insulating mandrels; forming a second trench to the second gate by removing portions of the first insulating material and the second insulating material above the second gate, wherein removing portions of the first insulating material comprises removing portions of the insulating mandrel aligned over the second gate; and filling the first trenches and the second trench with conductive material to form first contacts to the sources and drains of the first gates and a second contact to the second gate. forming one or more insulating mandrels aligned over the first gates and the second gates, wherein the insulating mandrels comprise the first insulating material; forming mandrel spacers around each insulating mandrel, wherein the mandrel spacers comprise the first insulating material; forming a second insulating layer of the second insulating material over the transistor; forming one or more first trenches to the sources and drains of the first gates by removing the second insulating material from portions of the transistor between the insulating mandrels; forming a second trench to the second gate by removing portions of the first insulating material and the second insulating material above the second gate, wherein removing portions of the first insulating material comprises removing portions of the insulating mandrel aligned over the second gate; and filling the first trenches and the second trench with conductive material to form first contacts to the sources and drains of the first gates and a second contact to the second gate.