A method of manufacturing a leadless integrated circuit package having two rows of bonding areas (716, 718), comprising: providing a metal leadframe having a thickness; patterning and partially etching a top surface of the metal leadframe to form a first pattern of recesses therein, the first pattern of recesses defining upper portions of a plurality of metal traces, each metal trace of the plurality of metal traces having a bonding area disposed on an upper surface thereof; plating with a wire bondable material the bonding areas of the metal traces; mounting an IC chip to a die-attach area on the top surface of the metal leadframe using a non-conductive adhesive coating disposed between the IC chip and the die-attach area; electrically coupling the IC chip to the bonding areas (716, 718) to inner and outer rows via wire bonds; applying an encapsulation compound to cover the IC chip, the wire bonds, and the plurality of metal traces and filling the recesses in the metal leadframe; selectively etching a bottom surface of the metal leadframe to form a second pattern of recesses therein to isolate each of the plurality of metal traces and to remove at least some of the leadframe disposed below one or more of the bonding areas and to define contact areas on lower surfaces of the plurality of metal traces; wherein the selectively etching the bottom surface includes etching portions of the leadframe corresponding to at least a portion of the first patterns of recesses to thereby completely etch through the leadframe; wherein at least one metal trace comprises a first contact area laterally disposed from a first bonding area of the inner row such that no line perpendicular to the metal leadframe intersects both the first contact area and the first bonding area; the second pattern of recesses defining a second contact area having a first width and being disposed directly below a second bonding area of the inner row having a second width, the first width being greater than the second width; and the second pattern of recesses defining a fourth contact area disposed directly below a fourth bonding area, a width of the fourth contact area being greater than a width of the fourth bonding area; and wherein the first bonding area is interposed between the second bonding area and the fourth bonding area; and characterized by the second pattern of recesses defining a third contact area disposed directly below a third bonding area of the outer row, a diameter of the third contact area being substantially the same as a diameter of the third bonding area at least a portion of the lower surface of the metal traces are etched back inside the encapsulation layer thereby isolating the metal traces from the contact areas. providing a metal leadframe having a thickness; patterning and partially etching a top surface of the metal leadframe to form a first pattern of recesses therein, the first pattern of recesses defining upper portions of a plurality of metal traces, each metal trace of the plurality of metal traces having a bonding area disposed on an upper surface thereof; plating with a wire bondable material the bonding areas of the metal traces; mounting an IC chip to a die-attach area on the top surface of the metal leadframe using a non-conductive adhesive coating disposed between the IC chip and the die-attach area; electrically coupling the IC chip to the bonding areas (716, 718) to inner and outer rows via wire bonds; applying an encapsulation compound to cover the IC chip, the wire bonds, and the plurality of metal traces and filling the recesses in the metal leadframe; selectively etching a bottom surface of the metal leadframe to form a second pattern of recesses therein to isolate each of the plurality of metal traces and to remove at least some of the leadframe disposed below one or more of the bonding areas and to define contact areas on lower surfaces of the plurality of metal traces; wherein the selectively etching the bottom surface includes etching portions of the leadframe corresponding to at least a portion of the first patterns of recesses to thereby completely etch through the leadframe; wherein at least one metal trace comprises a first contact area laterally disposed from a first bonding area of the inner row such that no line perpendicular to the metal leadframe intersects both the first contact area and the first bonding area; the second pattern of recesses defining a second contact area having a first width and being disposed directly below a second bonding area of the inner row having a second width, the first width being greater than the second width; and the second pattern of recesses defining a fourth contact area disposed directly below a fourth bonding area, a width of the fourth contact area being greater than a width of the fourth bonding area; and wherein the first bonding area is interposed between the second bonding area and the fourth bonding area; and characterized by the second pattern of recesses defining a third contact area disposed directly below a third bonding area of the outer row, a diameter of the third contact area being substantially the same as a diameter of the third bonding area at least a portion of the lower surface of the metal traces are etched back inside the encapsulation layer thereby isolating the metal traces from the contact areas.