A semiconductor light-emitting diode, comprising: an electrode layer; an ohmic layer on the electrode layer; a light-emitting structure disposed on the ohmic layer, the light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; and an insulating layer disposed around the light-emitting structure; and an electrode disposed on the light-emitting structure, wherein the electrode comprises: an ohmic contact layer that contacts a top surface of the second conductivity type semiconductor layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer comprising copper disposed on the first barrier layer; a second barrier layer disposed on the conductive layer; and a bonding layer disposed on the second barrier layer, characterized in that a side surface of the light-emitting structure is inclined, wherein it further comprises a channel layer disposed along outer edges of the first conductivity type semiconductor layer, wherein outmost edges of the ohmic layer are spaced apart from outside edges of the channel layer, wherein an end portion of the ohmic layer contacts an inner bottom of the channel layer and is disposed under an inner end portion of the channel layer, and wherein the electrode layer is disposed under the ohmic layer such that an end portion of the electrode layer does not contact the channel layer. an electrode layer; an ohmic layer on the electrode layer; a light-emitting structure disposed on the ohmic layer, the light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; and an insulating layer disposed around the light-emitting structure; and an electrode disposed on the light-emitting structure, wherein the electrode comprises: an ohmic contact layer that contacts a top surface of the second conductivity type semiconductor layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer comprising copper disposed on the first barrier layer; a second barrier layer disposed on the conductive layer; and a bonding layer disposed on the second barrier layer, an ohmic contact layer that contacts a top surface of the second conductivity type semiconductor layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer comprising copper disposed on the first barrier layer; a second barrier layer disposed on the conductive layer; and a bonding layer disposed on the second barrier layer, characterized in that a side surface of the light-emitting structure is inclined, wherein it further comprises a channel layer disposed along outer edges of the first conductivity type semiconductor layer, wherein outmost edges of the ohmic layer are spaced apart from outside edges of the channel layer, wherein an end portion of the ohmic layer contacts an inner bottom of the channel layer and is disposed under an inner end portion of the channel layer, and wherein the electrode layer is disposed under the ohmic layer such that an end portion of the electrode layer does not contact the channel layer.