A solid-state imaging element comprising: a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers (21, 22, 23) stacked one on top of the other, where M ≥ 2; a charge output region formed in the semiconductor layer; a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes (31, 32) are provided between the mth and (m+1)th light reception/ charge storage layers, where 1 ≤ m ≤ (M-1), to control the potentials of the light reception/charge storage layers (21, 22, 23); the potential control electrodes (31, 32) and conduction/non-conduction control region have a first conductivity type; intermediate layers (24, 25) are sandwiched between and in contact with the mth and (m+1)th light reception/charge storage layers; and wherein the charge output region 40) and the light reception/charge storage layers (21, 22, 23) have a second conductivity type, characterized in that the intermediate layers (24, 25) have a second conductivity type and are at least partially surrounded by the potential control electrodes (31, 32). a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers (21, 22, 23) stacked one on top of the other, where M ≥ 2; a charge output region formed in the semiconductor layer; a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes (31, 32) are provided between the mth and (m+1)th light reception/ charge storage layers, where 1 ≤ m ≤ (M-1), to control the potentials of the light reception/charge storage layers (21, 22, 23); the potential control electrodes (31, 32) and conduction/non-conduction control region have a first conductivity type; intermediate layers (24, 25) are sandwiched between and in contact with the mth and (m+1)th light reception/charge storage layers; and wherein the charge output region 40) and the light reception/charge storage layers (21, 22, 23) have a second conductivity type, characterized in that the intermediate layers (24, 25) have a second conductivity type and are at least partially surrounded by the potential control electrodes (31, 32). mth potential control electrodes (31, 32) are provided between the mth and (m+1)th light reception/ charge storage layers, where 1 ≤ m ≤ (M-1), to control the potentials of the light reception/charge storage layers (21, 22, 23); the potential control electrodes (31, 32) and conduction/non-conduction control region have a first conductivity type; intermediate layers (24, 25) are sandwiched between and in contact with the mth and (m+1)th light reception/charge storage layers; and wherein the charge output region 40) and the light reception/charge storage layers (21, 22, 23) have a second conductivity type, characterized in that the intermediate layers (24, 25) have a second conductivity type and are at least partially surrounded by the potential control electrodes (31, 32).