A III-nitride semiconductor light emitting device comprising: first and second spacer layers; a light emitting layer sandwiched between the first and second spacer layers; an n-type region adjacent to a surface of the first spacer layer opposite the light emitting layer; a p-type region adjacent to a surface of the second spacer layer opposite the light emitting layer, wherein a difference between a net polarization in at least one of the spacer layers (22, 24) and a net polarization in the light emitting layer is less than a difference between a net polarization in GaN and the net polarization in the light emitting layer, and a difference between the net polarization in at least one of the spacer layers (22, 24) and the net polarization in the light emitting layer is less than 0.02 C/m 2; characterized in that said light emitting device further comprises: a highly doped region of n-type material adjacent to an interface between the first spacer layer and the n-type region, a thickness and dopant concentration of the highly doped region of n-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the first spacer layer and the n-type region; and/or a highly doped region of p-type material adjacent to an interface between the second spacer layer and the p-type region, a thickness and dopant concentration of the highly doped region of p-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the second spacer layer and the p-type region. first and second spacer layers; a light emitting layer sandwiched between the first and second spacer layers; an n-type region adjacent to a surface of the first spacer layer opposite the light emitting layer; a p-type region adjacent to a surface of the second spacer layer opposite the light emitting layer, wherein a difference between a net polarization in at least one of the spacer layers (22, 24) and a net polarization in the light emitting layer is less than a difference between a net polarization in GaN and the net polarization in the light emitting layer, and a difference between the net polarization in at least one of the spacer layers (22, 24) and the net polarization in the light emitting layer is less than 0.02 C/m 2; characterized in that said light emitting device further comprises: a highly doped region of n-type material adjacent to an interface between the first spacer layer and the n-type region, a thickness and dopant concentration of the highly doped region of n-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the first spacer layer and the n-type region; and/or a highly doped region of p-type material adjacent to an interface between the second spacer layer and the p-type region, a thickness and dopant concentration of the highly doped region of p-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the second spacer layer and the p-type region. a highly doped region of n-type material adjacent to an interface between the first spacer layer and the n-type region, a thickness and dopant concentration of the highly doped region of n-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the first spacer layer and the n-type region; and/or a highly doped region of p-type material adjacent to an interface between the second spacer layer and the p-type region, a thickness and dopant concentration of the highly doped region of p-type material being selected such that the dopant concentration in the highly doped region times the thickness of the highly doped region is about equal to the sheet charge at the interface between the second spacer layer and the p-type region.