An infrared sensor (1A, 1B, 1C) comprising: a base substrate; a bolometer infrared receiver; a first beam; a second beam; first wiring; second wiring; and an infrared reflection film, wherein each of the first beam and the second beam has a connection portion (16A, 16B) connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion, the infrared receiver is supported by the first beam and the second beam to be away from the base substrate, the infrared receiver includes a lower electrode, an upper electrode, and a resistance change film including a resistance change material an electrical resistance of which changes with temperature, the resistance change film is sandwiched by the lower electrode and the upper electrode in a thickness direction, each of the lower electrode and the upper electrode is electrically connected to the resistance change film, the lower electrode and the upper electrode are electrically connected to the first wiring and the second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and the infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver, characterized in that the lower electrode has a first line-and-space structure, the upper electrode has a second line-and-space structure, and an alignment direction of the first line-and-space structure and an alignment direction of the second line-and-space structure are different from each other in plan view. a base substrate; a bolometer infrared receiver; a first beam; a second beam; first wiring; second wiring; and an infrared reflection film, wherein each of the first beam and the second beam has a connection portion (16A, 16B) connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion, the infrared receiver is supported by the first beam and the second beam to be away from the base substrate, the infrared receiver includes a lower electrode, an upper electrode, and a resistance change film including a resistance change material an electrical resistance of which changes with temperature, the resistance change film is sandwiched by the lower electrode and the upper electrode in a thickness direction, each of the lower electrode and the upper electrode is electrically connected to the resistance change film, the lower electrode and the upper electrode are electrically connected to the first wiring and the second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and the infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver, characterized in that the lower electrode has a first line-and-space structure, the upper electrode has a second line-and-space structure, and an alignment direction of the first line-and-space structure and an alignment direction of the second line-and-space structure are different from each other in plan view.