A light emitting diode comprising: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer under the first conductivity type semiconductor layer; an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer surrounding the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer; a first light extracting structure layer having a concave-convex structure on the passivation layer; and a first electrode layer electrically connected to the first conductivity type semiconductor layer through the passivation layer and the first light extracting structure layer, wherein the passivation layer is formed on top and lateral surfaces of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, wherein the concave-convex structure is formed on an outer surface of the first light extracting structure layer, wherein the light emitting diode further comprises: a second electrode layer electrically connected to the second conductivity type semiconductor layer through the passivation layer and the first light extracting structure layer, a first current spreading layer electrically connected to the first electrode layer and disposed on the first conductivity type semiconductor layer, a second current spreading layer electrically connected to the second electrode layer and disposed on the second conductivity type semiconductor layer, a growth substrate under the first conductivity type semiconductor layer, a second light extracting structure layer below the growth substrate, wherein the passivation layer surrounds the first and second current spreading layers, wherein the first light extracting structure layer and the passivation layer are selectively removed, so that the first and second electrode layers are formed on the first and second current spreading layers, respectively, and wherein the passivation layer is formed of a transparent electrically insulating material, characterized by a reflective layer disposed on portions of the first electrode layer and the first light extracting structure layer, and on portions of the second electrode layer and the first light extracting structure layer, wherein the reflective layer includes an electrically conductive material to electrically connect the first and second electrode layers (70, 60) to the outside. a first conductivity type semiconductor layer; a second conductivity type semiconductor layer under the first conductivity type semiconductor layer; an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer surrounding the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer; a first light extracting structure layer having a concave-convex structure on the passivation layer; and a first electrode layer electrically connected to the first conductivity type semiconductor layer through the passivation layer and the first light extracting structure layer, wherein the passivation layer is formed on top and lateral surfaces of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, wherein the concave-convex structure is formed on an outer surface of the first light extracting structure layer, wherein the light emitting diode further comprises: a second electrode layer electrically connected to the second conductivity type semiconductor layer through the passivation layer and the first light extracting structure layer, a first current spreading layer electrically connected to the first electrode layer and disposed on the first conductivity type semiconductor layer, a second current spreading layer electrically connected to the second electrode layer and disposed on the second conductivity type semiconductor layer, a growth substrate under the first conductivity type semiconductor layer, a second light extracting structure layer below the growth substrate, a second electrode layer electrically connected to the second conductivity type semiconductor layer through the passivation layer and the first light extracting structure layer, a first current spreading layer electrically connected to the first electrode layer and disposed on the first conductivity type semiconductor layer, a second current spreading layer electrically connected to the second electrode layer and disposed on the second conductivity type semiconductor layer, a growth substrate under the first conductivity type semiconductor layer, a second light extracting structure layer below the growth substrate, wherein the passivation layer surrounds the first and second current spreading layers, wherein the first light extracting structure layer and the passivation layer are selectively removed, so that the first and second electrode layers are formed on the first and second current spreading layers, respectively, and wherein the passivation layer is formed of a transparent electrically insulating material, characterized by a reflective layer disposed on portions of the first electrode layer and the first light extracting structure layer, and on portions of the second electrode layer and the first light extracting structure layer, wherein the reflective layer includes an electrically conductive material to electrically connect the first and second electrode layers (70, 60) to the outside.