A device for detecting infrared radiation that comprises: ▪ a substrate; ▪ a matrix of at least one line of elements for detecting said radiation each comprising a resistive imaging bolometer, said matrix being formed above the substrate; ▪ a readout circuit configured to apply electrical stimuli to each of the bolometers of the matrix to form an analogue electrical signal constituting an image of infrared radiation detected by the matrix; ▪ one probe configured to measure the temperature in at least one point of the substrate; ▪ an analogic-digital converter configured to convert analogue electrical signals delivered by the readout circuit and the probe into digital values; ▪ and a data processing unit configured - to store digital values NC ( i,j) corresponding to exposition of the matrix by a uniform scene at the measured temperature of the substrate, - to correct the digital value N brut ( i,j) formed from each imaging bolometer according to the relation: N corr i j = N brut i j − NC i j + NC ̅ where N corr ( i,j) is the corrected output signal and NC is the mean value of the stored digital values N brut ( i,j); characterized in that the data processing unit is further configured: ▪ to store predetermined digital values of electrical reference resistance R abs ( i,j) of the imaging bolometers corresponding to exposition of the matrix by a uniform scene at one reference temperature T ref of the substrate; ▪ to store a predetermined physical model of the electrical signals formed by the readout circuit as a function of the electrical resistance of the imaging bolometers; ▪ to calculate the digital values NC ( i,j): - in calculating digital values R est ( i,j) of the resistance of the imaging bolometer on the measured temperature T mes of the substrate according to the relation: R est i j = R abs i j. C T mes where C(T mes) is a parameter dependent on the measured temperature T mes of the substrate; - in calculating the digital values NC ( i,j) as a function of the digital values R est (i,j) of the resistance of the imaging bolometers and of the physical model of the signals formed by the readout circuit. ▪ a substrate; ▪ a matrix of at least one line of elements for detecting said radiation each comprising a resistive imaging bolometer, said matrix being formed above the substrate; ▪ a readout circuit configured to apply electrical stimuli to each of the bolometers of the matrix to form an analogue electrical signal constituting an image of infrared radiation detected by the matrix; ▪ one probe configured to measure the temperature in at least one point of the substrate; ▪ an analogic-digital converter configured to convert analogue electrical signals delivered by the readout circuit and the probe into digital values; ▪ and a data processing unit configured - to store digital values NC ( i,j) corresponding to exposition of the matrix by a uniform scene at the measured temperature of the substrate, - to correct the digital value N brut ( i,j) formed from each imaging bolometer according to the relation: N corr i j = N brut i j − NC i j + NC ̅ where N corr ( i,j) is the corrected output signal and NC is the mean value of the stored digital values N brut ( i,j); - to store digital values NC ( i,j) corresponding to exposition of the matrix by a uniform scene at the measured temperature of the substrate, - to correct the digital value N brut ( i,j) formed from each imaging bolometer according to the relation: N corr i j = N brut i j − NC i j + NC ̅ where N corr ( i,j) is the corrected output signal and NC is the mean value of the stored digital values N brut ( i,j); ▪ to store predetermined digital values of electrical reference resistance R abs ( i,j) of the imaging bolometers corresponding to exposition of the matrix by a uniform scene at one reference temperature T ref of the substrate; ▪ to store a predetermined physical model of the electrical signals formed by the readout circuit as a function of the electrical resistance of the imaging bolometers; ▪ to calculate the digital values NC ( i,j): - in calculating digital values R est ( i,j) of the resistance of the imaging bolometer on the measured temperature T mes of the substrate according to the relation: R est i j = R abs i j. C T mes where C(T mes) is a parameter dependent on the measured temperature T mes of the substrate; - in calculating the digital values NC ( i,j) as a function of the digital values R est (i,j) of the resistance of the imaging bolometers and of the physical model of the signals formed by the readout circuit. - in calculating digital values R est ( i,j) of the resistance of the imaging bolometer on the measured temperature T mes of the substrate according to the relation: R est i j = R abs i j. C T mes where C(T mes) is a parameter dependent on the measured temperature T mes of the substrate; - in calculating the digital values NC ( i,j) as a function of the digital values R est (i,j) of the resistance of the imaging bolometers and of the physical model of the signals formed by the readout circuit.