A method of forming a nanoscale pattern on a substrate, said method comprising: forming a first template layer encompassing a predefined area on a substrate; patterning first openings, each having a shape of a regular hexagon, in said first template layer, wherein said first openings are arranged in a first hexagonal array; forming first nanoscale self-assembled self-aligned structures (40A, 50A) in said first openings; then removing the remainder of the first template layer; forming a second template layer encompassing said area on said first nanoscale self-assembled self-aligned structures (40A, 50A); patterning second openings, each having a shape of said regular hexagon, in said second template layer, wherein said second openings are arranged in a second hexagonal array; forming second nanoscale self-assembled self-aligned structures in said second openings; then removing the remainder of the second template layer; forming a third template layer encompassing said area on said first and second nanoscale self-assembled self-aligned structures (40A, 50A and 40B); patterning third openings, each having a shape of said regular hexagon, in said third template layer, wherein said third openings are arranged in a third hexagonal array; and forming third nanoscale self-assembled self-aligned structures (40C, 50C) in said third openings; then removing the remainder of the first template layer; wherein each of said first openings, said second openings, and said third openings does not overlap any other of said first openings, said second openings, and said third openings; wherein said predefined area is the same as a union of combined areas of said first openings, combined areas of said second openings, and combined areas of said third openings; and wherein the method further comprises: applying a non-photosensitive polymeric resist comprising a first polymeric block component and a second polymeric block component within each of said first openings prior to said forming of first nanoscale self-assembled self-aligned structures; applying said non-photosensitive polymeric resist within each of said second openings prior to said forming of second nanoscale self-assembled self-aligned structures; and applying said non-photosensitive polymeric resist within each of said third openings prior to said forming of third nanoscale self-assembled self-aligned structures. forming a first template layer encompassing a predefined area on a substrate; patterning first openings, each having a shape of a regular hexagon, in said first template layer, wherein said first openings are arranged in a first hexagonal array; forming first nanoscale self-assembled self-aligned structures (40A, 50A) in said first openings; then removing the remainder of the first template layer; forming a second template layer encompassing said area on said first nanoscale self-assembled self-aligned structures (40A, 50A); patterning second openings, each having a shape of said regular hexagon, in said second template layer, wherein said second openings are arranged in a second hexagonal array; forming second nanoscale self-assembled self-aligned structures in said second openings; then removing the remainder of the second template layer; forming a third template layer encompassing said area on said first and second nanoscale self-assembled self-aligned structures (40A, 50A and 40B); patterning third openings, each having a shape of said regular hexagon, in said third template layer, wherein said third openings are arranged in a third hexagonal array; and forming third nanoscale self-assembled self-aligned structures (40C, 50C) in said third openings; then removing the remainder of the first template layer; wherein each of said first openings, said second openings, and said third openings does not overlap any other of said first openings, said second openings, and said third openings; wherein said predefined area is the same as a union of combined areas of said first openings, combined areas of said second openings, and combined areas of said third openings; and wherein the method further comprises: applying a non-photosensitive polymeric resist comprising a first polymeric block component and a second polymeric block component within each of said first openings prior to said forming of first nanoscale self-assembled self-aligned structures; applying said non-photosensitive polymeric resist within each of said second openings prior to said forming of second nanoscale self-assembled self-aligned structures; and applying said non-photosensitive polymeric resist within each of said third openings prior to said forming of third nanoscale self-assembled self-aligned structures. applying a non-photosensitive polymeric resist comprising a first polymeric block component and a second polymeric block component within each of said first openings prior to said forming of first nanoscale self-assembled self-aligned structures; applying said non-photosensitive polymeric resist within each of said second openings prior to said forming of second nanoscale self-assembled self-aligned structures; and applying said non-photosensitive polymeric resist within each of said third openings prior to said forming of third nanoscale self-assembled self-aligned structures.