mhurhangee/ep-ind-claims huggingface dataset:
A slope trimming attachment, comprising: a base, a first cutting device, a leveling mechanism, and a turning mechanism; wherein the first cutting device and the leveling mechanism are arranged on the turning mechanism; the turning mechanism is rotatably arranged on the base, and the turning mechanism is configured to be able to adjust an angle of a cutting surface of the first cutting device relative to the slope surface and an angle of a leveling surface of the leveling mechanism relative to the slope surface through rotation, the turning mechanism is arranged on at least one of two ends of the base in a first direction; the turning mechanism is rotatable relative to the base along an axis in a second direction; wherein the first direction is along a length direction of the base, and the second direction is along a width direction of the base; the turning mechanism comprises a turning plate assembly and a drive assembly; the turning plate assembly comprises a turning plate and a connecting plate; and one end of the connecting plate is rotatably connected to the base, and the other end of the connecting plate is rotatably connected to one end of the turning plate; the first cutting device and the leveling mechanism are installed on the turning plate; the drive assembly is connected between the base and the turning plate; wherein the drive assembly is configured to adjust an angular position of the connecting plate relative to the base and an angular position of the turning plate relative to the connecting plate. wherein the first cutting device and the leveling mechanism are arranged on the turning mechanism; the turning mechanism is rotatably arranged on the base, and the turning mechanism is configured to be able to adjust an angle of a cutting surface of the first cutting device relative to the slope surface and an angle of a leveling surface of the leveling mechanism relative to the slope surface through rotation, the turning mechanism is arranged on at least one of two ends of the base in a first direction; the turning mechanism is rotatable relative to the base along an axis in a second direction; wherein the first direction is along a length direction of the base, and the second direction is along a width direction of the base; the turning mechanism comprises a turning plate assembly and a drive assembly; the turning plate assembly comprises a turning plate and a connecting plate; and one end of the connecting plate is rotatably connected to the base, and the other end of the connecting plate is rotatably connected to one end of the turning plate; the first cutting device and the leveling mechanism are installed on the turning plate; the drive assembly is connected between the base and the turning plate; wherein the drive assembly is configured to adjust an angular position of the connecting plate relative to the base and an angular position of the turning plate relative to the connecting plate.
Memory selector, for use in a crossbar memory architecture, having a metal-semiconductor-metal, MSM, back-to-back Schottky diode, said diode consisting of: a metal bottom electrode, a metal top electrode and an intermediate layer stack arranged in-between and in contact with the electrodes (110, 120); a bottom Schottky barrier having a bottom Schottky barrier height Φ B formed at the interface between the metal bottom electrode and the intermediate layer stack; and a top Schottky barrier having a top Schottky barrier height Φ T formed at the interface between the metal top electrode and the intermediate layer stack, characterised in that the intermediate layer stack comprises atomic layers (210, 220, 230, 240) which comprise multiple layers of different two-dimensional, 2D, materials at the interface with at least one of the electrodes (110; 120), each atomic layer (210, 220, 230, 240) forming or modulating the respective Schottky barrier height. a metal bottom electrode, a metal top electrode and an intermediate layer stack arranged in-between and in contact with the electrodes (110, 120); a bottom Schottky barrier having a bottom Schottky barrier height Φ B formed at the interface between the metal bottom electrode and the intermediate layer stack; and a top Schottky barrier having a top Schottky barrier height Φ T formed at the interface between the metal top electrode and the intermediate layer stack, characterised in that the intermediate layer stack comprises atomic layers (210, 220, 230, 240) which comprise multiple layers of different two-dimensional, 2D, materials at the interface with at least one of the electrodes (110; 120), each atomic layer (210, 220, 230, 240) forming or modulating the respective Schottky barrier height.
A container for a compactable archive, said compactable archive comprising a plurality of said containers movable on guides extending in a given direction to define said compactable archive; said container being peripherally delimited by a plurality of substantially rectangular walls parallel to said direction, having given thickness and transversally connected end to end and in a fluid-tight manner to peripherally delimit a prismatic volume developed according to said direction and accessible according to said direction through at least one opening (A') transversal to said direction; each said opening (A') being delimited by a peripheral frame; wherein each said frame has at least one step for shape-defining a labyrinth clearance with an opposing frame, characterized in that each said wall has a multilayer structure provided with at least a first panel and a second panel overlapping to delimit an air gap having given thickness and developed parallel to said direction; said first panel and said second panel of each said wall having a substantially identical extension in said direction to impart a given stepped shape to each respective said frame.
A method of forming a ceramic coating on a substrate by electron-beam physical vapor deposition, the method comprising the steps of: - placing in a chamber a composite target in the form of a bar made up of ceramic powder and presenting a composition that is not uniform in the longitudinal direction; - introducing into the chamber at least one substrate on which a ceramic coating having a composition gradient is to be formed; and - sweeping a top face of the bar with an electron beam in order to melt the bar material at its top face and form a vapor cloud in the chamber at low pressure, characterized in that: - a bar is used that presents a plurality of superposed layers of different compositions, the composition within each layer being uniform over the entire cross-section of the bar, and each layer comprising zirconia and at least one oxide selected from the oxides of nickel, cobalt, iron, yttrium, hafnium, cerium, lanthanum, tantalum, niobium, scandium, samarium, gadolinium, dysprosium, ytterbium, and aluminum; - in such a manner that the ceramic coating formed on the substrate by progressively consuming the bar reflects the variation in the composition of the bar. - placing in a chamber a composite target in the form of a bar made up of ceramic powder and presenting a composition that is not uniform in the longitudinal direction; - introducing into the chamber at least one substrate on which a ceramic coating having a composition gradient is to be formed; and - sweeping a top face of the bar with an electron beam in order to melt the bar material at its top face and form a vapor cloud in the chamber at low pressure, - a bar is used that presents a plurality of superposed layers of different compositions, the composition within each layer being uniform over the entire cross-section of the bar, and each layer comprising zirconia and at least one oxide selected from the oxides of nickel, cobalt, iron, yttrium, hafnium, cerium, lanthanum, tantalum, niobium, scandium, samarium, gadolinium, dysprosium, ytterbium, and aluminum; - in such a manner that the ceramic coating formed on the substrate by progressively consuming the bar reflects the variation in the composition of the bar.
An evacuated and sealed tube comprising: i) hyaluronic acid, but not comprising whole blood; ii) hyaluronic acid and a thixotropic gel; or iii) hyaluronic acid and a thixotropic gel and an anticoagulant; or iv) hyaluronic acid and an anticoagulant, but not comprising whole blood. i) hyaluronic acid, but not comprising whole blood; ii) hyaluronic acid and a thixotropic gel; or iii) hyaluronic acid and a thixotropic gel and an anticoagulant; or iv) hyaluronic acid and an anticoagulant, but not comprising whole blood.
Hand-held circular saw having a housing and a drive unit at least partly arranged in the housing and which is assigned a tool holder for a replaceable saw blade, wherein the drive unit is designed to drive the replaceable saw blade rotationally about an associated axis of rotation, wherein the replaceable saw blade is assigned a blade guard, which is mounted in the housing so as to be rotatable about the associated axis of rotation and, at least during a sawing operation, encloses a cutting edge of the replaceable saw blade in such a way that touching the cutting edge can be at least substantially prevented, characterized in that a touch sensor is assigned to the blade guard and in that a safety device is provided, which is designed to permit safe operation of the hand-held circular saw.
Signaling device for monitoring a technical installation, having a sensor comprising at least a first sensor cell and a second sensor cell, a first, second and third electrode (92, 94, 96) for contacting said first and second sensor cells, said first and second electrodes (92, 94) being disposed in a first plane and said third electrode being disposed in a second plane, a pressure sensitive material within said first and second sensor cells configured to change, under local loading, an electrical characteristic of said first and second sensor cells at the location of loading, said first and second planes (88, 90) being spaced apart by said pressure sensitive material, and an evaluation unit configured to provide an output signal in response to actuation of the first and second sensor cells, wherein the first electrode is connected to the first sensor cell, the second electrode is connected to the second sensor cell, and the third electrode is connected to both the first and second sensor cells, characterized by a first and a second sequentialization element (130, 132) and a terminal (128, 150) for supplying a defined first potential, wherein the first and second sequentialization elements are over-occupied in that the first and second electrodes (92, 94) of the first plane and the third electrode of the second plane are connected to the evaluation unit via the first sequentialization element and in that the first and second electrodes (92, 94) of the first plane and the third electrode (92, 94, 96) of the second plane are connected to the terminal (128, 150) of the defined first potential via the second sequentialization element.
Photodetector with internal gain (10; 40; 50; 60; 70; 80; 90) comprising: ▪ a semiconductor structure (12; 12, 62; 12, 72) in which impact ionization events are produced mostly by minority charge carriers; ▪ a means (24, 26; 52; 94, 96) of defining, in the semiconductor structure, a photon collection region; ▪ a P-N type junction (12, 20; 82) formed in the semiconductor structure, said junction being capable to collect the minority charge carriers of the semiconductor structure (12; 12, 62; 12, 72) and to produce avalanche amplification of the collected minority charge carriers when it is subjected to a high reverse bias; ▪ a collector contact which is located in the P-N junction and used to collect current in the P-N junction. ▪ a first and a second biasing contacts (16, 18) located in the semiconductor structure (12; 12, 62; 12, 72); respectively close to the collection region and to the P-N type junction (12, 20; 82), the collection region and the P-N type junction (12, 20; 82) being between the first and the second contacts, so that an electric field created in the semiconductor structure (12; 12, 62; 12, 72) due to a voltage applied between the first and the second contacts (16, 18) produces pre-amplification due to carrier impact ionization created in the collection region when said carriers migrate towards the P-N type junction (12, 20; 82) in view of their collection by the latter. ▪ a semiconductor structure (12; 12, 62; 12, 72) in which impact ionization events are produced mostly by minority charge carriers; ▪ a means (24, 26; 52; 94, 96) of defining, in the semiconductor structure, a photon collection region; ▪ a P-N type junction (12, 20; 82) formed in the semiconductor structure, said junction being capable to collect the minority charge carriers of the semiconductor structure (12; 12, 62; 12, 72) and to produce avalanche amplification of the collected minority charge carriers when it is subjected to a high reverse bias; ▪ a collector contact which is located in the P-N junction and used to collect current in the P-N junction. ▪ a first and a second biasing contacts (16, 18) located in the semiconductor structure (12; 12, 62; 12, 72); respectively close to the collection region and to the P-N type junction (12, 20; 82), the collection region and the P-N type junction (12, 20; 82) being between the first and the second contacts, so that an electric field created in the semiconductor structure (12; 12, 62; 12, 72) due to a voltage applied between the first and the second contacts (16, 18) produces pre-amplification due to carrier impact ionization created in the collection region when said carriers migrate towards the P-N type junction (12, 20; 82) in view of their collection by the latter.
A laminated glazing comprising two transparent substrates which are separated by a lamination interlayer, each substrate comprising two main faces, the first transparent substrate being coated on one of its main faces with a functional coating capable of acting on the solar radiation and/or infrared radiation, said coating comprising at least one metallic functional layer based on silver, each deposited between two dielectric coatings, at least one face of the second substrate comprises a low emissive coating, said low emissive coating comprising: - a first dielectric coating, - a low emissivity layer, chosen from transparent conductive oxides, - a second dielectric coating, wherein one of the two coatings comprises an absorbing layer having a thickness comprised between 2 and 100 nm, chosen from: - layers based on one or more metals and/or metalloids, - nitride layers of one or more metals and/or metalloids, - oxynitride layers of one or more metals and/or metalloids, elements chosen from among palladium, niobium, tungsten, iron particularly in the form of stainless steel, titanium, chromium, molybdenum, zirconium, nickel, tantalum, zinc, tin, silicon and hafnium, the laminated glaing has a light transmission of between 25 and 44%. at least one face of the second substrate comprises a low emissive coating, said low emissive coating comprising: - a first dielectric coating, - a low emissivity layer, chosen from transparent conductive oxides, - a second dielectric coating, - a first dielectric coating, - a low emissivity layer, chosen from transparent conductive oxides, - a second dielectric coating, wherein one of the two coatings comprises an absorbing layer having a thickness comprised between 2 and 100 nm, chosen from: - layers based on one or more metals and/or metalloids, - nitride layers of one or more metals and/or metalloids, - oxynitride layers of one or more metals and/or metalloids, - layers based on one or more metals and/or metalloids, - nitride layers of one or more metals and/or metalloids, - oxynitride layers of one or more metals and/or metalloids, elements chosen from among palladium, niobium, tungsten, iron particularly in the form of stainless steel, titanium, chromium, molybdenum, zirconium, nickel, tantalum, zinc, tin, silicon and hafnium, the laminated glaing has a light transmission of between 25 and 44%.
2-mercaptobenzothiazole manganese zinc, characterized in that the chemical structure thereof is: wherein m, n and n' are positive integers, and m = 2 (n + n'), n≥n', n: n' = 1: 1 ∼ 9: 1.
Composition comprising, in a physiologically acceptable aqueous medium: 4-(3-ethoxy-4-hydroxyphenyl)-2-butanone and an organic solvent with solubility parameters in the Hansen solubility space such that 14,5 < δ a < 30 and 15 < δ d < 22, chosen from ethanol, 1,2-propylene glycol, 1,3-propanediol, PEG-8 and propylene carbonate.
A gas turbine engine nozzle (26,28,30) comprising: an inner sidewall (32,70); an outer sidewall, (34,72); at least one nozzle vane (54,56,58,60) extending between the inner and outer sidewalls, the at least one nozzle vane (54,56,58,60) comprising a root and a tip, said root being coupled to an inner sidewall (32,70) and said tip coupled to an outer sidewall (34,72); the nozzle being characterised in that a first stress relief pocket defined within said outer sidewall proximate to a trailing edge of said at least one nozzle vane, said first stress relief pocket being defined radially outward from the tip of the nozzle vane; and a second stress relief pocket defined within said inner sidewall proximate to a trailing edge of said at least one nozzle vane, said second stress relief pocket being defined radially inward from the root of the at least one nozzle vane. an inner sidewall (32,70); an outer sidewall, (34,72); at least one nozzle vane (54,56,58,60) extending between the inner and outer sidewalls, the at least one nozzle vane (54,56,58,60) comprising a root and a tip, said root being coupled to an inner sidewall (32,70) and said tip coupled to an outer sidewall (34,72); the nozzle being characterised in that a first stress relief pocket defined within said outer sidewall proximate to a trailing edge of said at least one nozzle vane, said first stress relief pocket being defined radially outward from the tip of the nozzle vane; and a second stress relief pocket defined within said inner sidewall proximate to a trailing edge of said at least one nozzle vane, said second stress relief pocket being defined radially inward from the root of the at least one nozzle vane.
A method for policy based tiered allocation for a hybrid storage device (102; 702), the method comprising: receiving, at a filesystem allocator, a request to allocate an amount of storage on the hybrid storage device, the request including a policy (608 - 612; 724 - 728) that enumerates cluster allocation bitmaps; receiving, from the policy, a cluster allocation bitmap, wherein the hybrid storage device comprises a plurality of zones (114 - 120) including a metadata zone, a spillover zone, a fast data zone, and a slow data zone, wherein the policy orders the plurality of zones based on a data type associated with the allocation request, wherein the policy prioritizes the plurality of zones based on the data type, and wherein the policy enumerates one or more cluster allocation bitmaps from one or more of the ordered plurality of zones, wherein the policy enumerates the one or more cluster allocation bitmaps based on the zones priorities searching the cluster allocation bitmap for an unallocated block of space that satisfies the amount of storage; and allocating the amount of storage from the unallocated block of space. receiving, at a filesystem allocator, a request to allocate an amount of storage on the hybrid storage device, the request including a policy (608 - 612; 724 - 728) that enumerates cluster allocation bitmaps; receiving, from the policy, a cluster allocation bitmap, wherein the hybrid storage device comprises a plurality of zones (114 - 120) including a metadata zone, a spillover zone, a fast data zone, and a slow data zone, wherein the policy orders the plurality of zones based on a data type associated with the allocation request, wherein the policy prioritizes the plurality of zones based on the data type, and wherein the policy enumerates one or more cluster allocation bitmaps from one or more of the ordered plurality of zones, wherein the policy enumerates the one or more cluster allocation bitmaps based on the zones priorities searching the cluster allocation bitmap for an unallocated block of space that satisfies the amount of storage; and allocating the amount of storage from the unallocated block of space.
An organosilicon compound having the general formula: wherein R 1 is a C 1 -C 6 alkyl group, R 2 is hydrogen or methyl, and Y 1 and Y 2 are each independently a C 1 -C 10 linear alkylene group.
A method for predicting the severity of the disease Multiple Sclerosis in an individual comprising the steps of: a. using a nucleic acid isolated from a sample of an individual; b. determining the type of nucleotide in SNP rs2059283 and/or rs12927173, in one or both alleles of the diallelic marker; and c. correlating the result of the genotyping steps with the severity of the disease Multiple Sclerosis. a. using a nucleic acid isolated from a sample of an individual; b. determining the type of nucleotide in SNP rs2059283 and/or rs12927173, in one or both alleles of the diallelic marker; and c. correlating the result of the genotyping steps with the severity of the disease Multiple Sclerosis.
A use of a nitrogen monoxide cracking unit (100-103, 202, 207, 209) installed in a feed water system or a waste water system of a plant for decomposing nitrogen monoxide in a fluid by reacting nitrogen monoxide with ammonia in a gaseous phase and forming nitrogen and water, characterized in that a catalyst (201, 203, 208, 210) to accelerate decomposition of nitrogen monoxide is installed in the interior of the nitrogen monoxide cracking unit (200, 202, 207, 209), and the nitrogen monoxide cracking unit (200, 202, 207, 209) is used to carry out the decomposition reaction of the nitrogen monoxide where the fluid pressure comes to be the lowest, i.e., before the sites where steam condenses as it enters a low-pressure turbine and feed water heaters (2, 4) of the plant.
A method for improving link layer protocol synchronization between a transmitter and receiver in a wireless communication system, the method comprising: transmitting a plurality of successive protocol data units from the transmitter to the receiver, each protocol data unit having a corresponding new data indicator to distinguish each succeeding protocol data unit from a preceding protocol data unit; receiving a reset request from the receiver indicating that a protocol synchronization error has occurred; and responsive to said reset request, aborting transmission of a current protocol data unit and transmitting a succeeding protocol data unit to said receiver with a corresponding new data indicator to distinguish the succeeding protocol data unit from the aborted protocol data unit. transmitting a plurality of successive protocol data units from the transmitter to the receiver, each protocol data unit having a corresponding new data indicator to distinguish each succeeding protocol data unit from a preceding protocol data unit; receiving a reset request from the receiver indicating that a protocol synchronization error has occurred; and responsive to said reset request, aborting transmission of a current protocol data unit and transmitting a succeeding protocol data unit to said receiver with a corresponding new data indicator to distinguish the succeeding protocol data unit from the aborted protocol data unit.