A semiconductor light emitting device comprising: a semiconductor layer having a first major surface, a second major surface on a side opposite to the first major surface, and a first side surface being in contact with the first major surface and the second major surface, the semiconductor layer including a light emitting layer; a p-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; an n-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; a fluorescent substance layer provided on the first major surface side, and including a fluorescent substance radiating light different in a wavelength from light emitted from the light emitting layer; a first insulating film provided between the semiconductor layer and the fluorescent substance layer; a second insulating film covering the first side surface; and a reflecting member covering the first side surface via the second insulating film; characterized in that: the semiconductor light emitting device further comprises a transparent layer (70, 170, 270, 370), made of a transparent resin, provided between the first insulating film and the fluorescent substance layer, and having a third major surface (70a, 270a, 370a) on the semiconductor layer side, a fourth major surface (70b, 270b, 370b) on the fluorescent substance layer side, and a second side surface (70c, 170c, 270c, 370c) being in contact with the third major surface (70a, 270a, 370a), the transparent layer (70, 170, 270, 370) transmitting the light emitted from the light emitting layer; and a further insulating film between the transparent layer (70, 170, 270, 370) and the fluorescent substance layer, the further insulating film being made of inorganic material, wherein the first insulating film is provided between the semiconductor layer and the transparent layer (70, 170, 270, 370); the second insulating film further covers the second side surface (70c, 170c, 270c, 370c); and the reflecting member further covers at least a portion of the second side surface (70c, 170c, 270c, 370c) via the second insulating film. a semiconductor layer having a first major surface, a second major surface on a side opposite to the first major surface, and a first side surface being in contact with the first major surface and the second major surface, the semiconductor layer including a light emitting layer; a p-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; an n-side interconnect portion electrically connected to the semiconductor layer on the second major surface side; a fluorescent substance layer provided on the first major surface side, and including a fluorescent substance radiating light different in a wavelength from light emitted from the light emitting layer; a first insulating film provided between the semiconductor layer and the fluorescent substance layer; a second insulating film covering the first side surface; and a reflecting member covering the first side surface via the second insulating film; characterized in that: the semiconductor light emitting device further comprises a transparent layer (70, 170, 270, 370), made of a transparent resin, provided between the first insulating film and the fluorescent substance layer, and having a third major surface (70a, 270a, 370a) on the semiconductor layer side, a fourth major surface (70b, 270b, 370b) on the fluorescent substance layer side, and a second side surface (70c, 170c, 270c, 370c) being in contact with the third major surface (70a, 270a, 370a), the transparent layer (70, 170, 270, 370) transmitting the light emitted from the light emitting layer; and a further insulating film between the transparent layer (70, 170, 270, 370) and the fluorescent substance layer, the further insulating film being made of inorganic material, wherein the first insulating film is provided between the semiconductor layer and the transparent layer (70, 170, 270, 370); the second insulating film further covers the second side surface (70c, 170c, 270c, 370c); and the reflecting member further covers at least a portion of the second side surface (70c, 170c, 270c, 370c) via the second insulating film.