A light emitting diode device, comprising: a semiconductor nanowire core; and a first semiconductor shell comprising an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core, wherein: the active region quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the active region quantum well shell; the indium rich regions comprise integral portions of the active region quantum well shell rather than discrete nanoparticles embedded in the active region quantum well shell; and the device further comprises a second semiconductor shell located radially between the semiconductor nanowire core and the first semiconductor shell characterized in that: the first semiconductor shell has a non-uniform surface profile having at least 3 peaks which comprise the indium rich regions; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley which comprises the indium poor region; each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley; the second semiconductor shell has a non-uniform surface profile having at least 3 peaks; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley; and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley. a semiconductor nanowire core; and a first semiconductor shell comprising an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core, wherein: the active region quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the active region quantum well shell; the indium rich regions comprise integral portions of the active region quantum well shell rather than discrete nanoparticles embedded in the active region quantum well shell; and the device further comprises a second semiconductor shell located radially between the semiconductor nanowire core and the first semiconductor shell characterized in that: the first semiconductor shell has a non-uniform surface profile having at least 3 peaks which comprise the indium rich regions; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley which comprises the indium poor region; the active region quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the active region quantum well shell; the indium rich regions comprise integral portions of the active region quantum well shell rather than discrete nanoparticles embedded in the active region quantum well shell; and the first semiconductor shell has a non-uniform surface profile having at least 3 peaks which comprise the indium rich regions; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley which comprises the indium poor region; each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley; the second semiconductor shell has a non-uniform surface profile having at least 3 peaks; each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley; and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.