A solar cell (11, 12, 13, 14, 15, 16, 17, 18, 19, 20), comprising: a substrate of a first conductive type; a passivation layer positioned on a rear surface of the substrate on which light is not incident; an emitter region of a second conductive type opposite the first conductive type that is positioned on the passivation layer; a first field region of the first conductive type that is positioned on the passivation layer to be separated from the emitter region; a first electrode electrically connected to the emitter region and a first auxiliary electrode positioned between the emitter region and the first electrode; a second electrode electrically connected to the first field region and a second auxiliary electrode positioned between the first field region and the second electrode; an insulating region (161, 161a, 161b) directly positioned on the rear surface of the substrate which is exposed between the emitter region and the first field region and on an edge of the first field region, wherein the passivation layer: - has a thickness of 1 nm to 10 nm so that a carrier is moved through the passivation layer, - is formed of at least one of silicon oxide, SiOx, and silicon nitride, SiNx, - includes a first portion positioned between the substrate and the first field region, and - includes a second portion positioned between the substrate and the emitter region, the first portion and the second portion of the passivation layer being spatially separated from each other, wherein a portion of the insulating region on the edge of the first field region is positioned between the first field region and the second electrode, and wherein a second field region is positioned on the substrate to be opposite to the first field region, wherein the second field region is an impurity region that is more heavily doped with impurities of the same conductive type as the substrate than the substrate. a substrate of a first conductive type; a passivation layer positioned on a rear surface of the substrate on which light is not incident; an emitter region of a second conductive type opposite the first conductive type that is positioned on the passivation layer; a first field region of the first conductive type that is positioned on the passivation layer to be separated from the emitter region; a first electrode electrically connected to the emitter region and a first auxiliary electrode positioned between the emitter region and the first electrode; a second electrode electrically connected to the first field region and a second auxiliary electrode positioned between the first field region and the second electrode; an insulating region (161, 161a, 161b) directly positioned on the rear surface of the substrate which is exposed between the emitter region and the first field region and on an edge of the first field region, wherein the passivation layer: - has a thickness of 1 nm to 10 nm so that a carrier is moved through the passivation layer, - is formed of at least one of silicon oxide, SiOx, and silicon nitride, SiNx, - includes a first portion positioned between the substrate and the first field region, and - includes a second portion positioned between the substrate and the emitter region, the first portion and the second portion of the passivation layer being spatially separated from each other, - has a thickness of 1 nm to 10 nm so that a carrier is moved through the passivation layer, - is formed of at least one of silicon oxide, SiOx, and silicon nitride, SiNx, - includes a first portion positioned between the substrate and the first field region, and - includes a second portion positioned between the substrate and the emitter region, the first portion and the second portion of the passivation layer being spatially separated from each other, wherein a portion of the insulating region on the edge of the first field region is positioned between the first field region and the second electrode, and wherein a second field region is positioned on the substrate to be opposite to the first field region, wherein the second field region is an impurity region that is more heavily doped with impurities of the same conductive type as the substrate than the substrate.