An organic transistor-based system for electrophysiological monitoring of cells including: - a transistor area including a plurality of organic transistors, each organic transistor of the plurality comprising: ∘ a floating gate electrode; ∘ a source electrode and a drain electrode; ∘ an organic semiconductor; ∘ an insulating layer (3, 4) realized between said source and drain electrodes (5, 6), and said floating gate electrode, said insulating layer (3, 4) having either a thickness comprised between about 1 nm and about 100 nm or a capacitance per unit area comprised between about 10 nF/cm 2 and about 150 nF/cm 2; - a sensing area, said sensing area including a biocompatible layer (4, 4a) realized in an insulating biocompatible material, said layer for being in contact with said cells to be monitored and covering a first portion of floating gate electrodes of the plurality of organic transistors, said biocompatible layer including a plurality of through apertures, each aperture exposing a portion of the floating gate electrode of an organic transistor of the plurality, so that the floating gates of at least some of the organic transistors are exposed in said sensing area in order to be in contact with said cells to be monitored; - a barrier mechanically separating said sensing area and the transistor area; each of said organic transistors of said plurality further including - a control gate electrode coupled to a second portion of said floating gate electrode external to said sensing area by means of a capacitor, said control gate electrode being separated from said floating gate electrode by said insulating layer (3, 4), said control gate electrode for setting a working point of the organic transistor to which the control gate electrode belongs to by a control voltage (V GS) applied to it; - wherein, in each organic transistor, an overlapping area defined by said control gate electrode formed above said floating gate is comprised between 9 * 10 -4 cm 2 and 2*10 -3 cm 2. - a transistor area including a plurality of organic transistors, each organic transistor of the plurality comprising: ∘ a floating gate electrode; ∘ a source electrode and a drain electrode; ∘ an organic semiconductor; ∘ an insulating layer (3, 4) realized between said source and drain electrodes (5, 6), and said floating gate electrode, said insulating layer (3, 4) having either a thickness comprised between about 1 nm and about 100 nm or a capacitance per unit area comprised between about 10 nF/cm 2 and about 150 nF/cm 2; ∘ a floating gate electrode; ∘ a source electrode and a drain electrode; ∘ an organic semiconductor; ∘ an insulating layer (3, 4) realized between said source and drain electrodes (5, 6), and said floating gate electrode, said insulating layer (3, 4) having either a thickness comprised between about 1 nm and about 100 nm or a capacitance per unit area comprised between about 10 nF/cm 2 and about 150 nF/cm 2; - a sensing area, said sensing area including a biocompatible layer (4, 4a) realized in an insulating biocompatible material, said layer for being in contact with said cells to be monitored and covering a first portion of floating gate electrodes of the plurality of organic transistors, said biocompatible layer including a plurality of through apertures, each aperture exposing a portion of the floating gate electrode of an organic transistor of the plurality, so that the floating gates of at least some of the organic transistors are exposed in said sensing area in order to be in contact with said cells to be monitored; - a barrier mechanically separating said sensing area and the transistor area; - a control gate electrode coupled to a second portion of said floating gate electrode external to said sensing area by means of a capacitor, said control gate electrode being separated from said floating gate electrode by said insulating layer (3, 4), said control gate electrode for setting a working point of the organic transistor to which the control gate electrode belongs to by a control voltage (V GS) applied to it; - wherein, in each organic transistor, an overlapping area defined by said control gate electrode formed above said floating gate is comprised between 9 * 10 -4 cm 2 and 2*10 -3 cm 2.