A semiconductor device comprising: at least one vertical-cavity surface-emitting laser, VCSEL, device formed from a layer structure that includes at least one bottom n-type layer (105, 411, 413), at least one intermediate p-type layer (107, 415) formed above the at least one bottom n-type layer (105, 411, 413), an n-type modulation doped quantum well structure formed above the at least one intermediate p-type layer (107, 415), at least one spacer layer (109, 417) formed between the at least one intermediate p-type layer (107, 415) and the n-type modulation doped quantum well structure, and at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) formed above the n-type modulation doped quantum well structure; an annealed oxygen implant region disposed vertically in the layer structure within the at least one spacer layer (109, 417) and configured to surround the VCSEL device; and an annealed n-type ion implant region disposed vertically in the layer structure within the at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) and configured to overlie the annealed oxygen implant region and surround the VCSEL device; an anode that contacts the at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) of the at least one VCSEL device; and a cathode that contacts the at least one bottom n-type layer (105, 411, 413) of the at least one VCSEL device; wherein the anode and the cathode are electrically coupled to the at least one VCSEL device; wherein the anode overlies both the annealed n-type ion implant region and the annealed oxygen implant region; and wherein the at least one intermediate p-type layer (107, 415) has a built-in hole charge Q p, the at least one bottom n-type layer (107, 415) has a built-in electron charge Q n, and the built-in hole charge Q p relative to the built-in electron charge Q n is configured for diode current-voltage characteristics of the VCSEL device based on voltages applied to the anode and the cathode. at least one vertical-cavity surface-emitting laser, VCSEL, device formed from a layer structure that includes at least one bottom n-type layer (105, 411, 413), at least one intermediate p-type layer (107, 415) formed above the at least one bottom n-type layer (105, 411, 413), an n-type modulation doped quantum well structure formed above the at least one intermediate p-type layer (107, 415), at least one spacer layer (109, 417) formed between the at least one intermediate p-type layer (107, 415) and the n-type modulation doped quantum well structure, and at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) formed above the n-type modulation doped quantum well structure; an annealed oxygen implant region disposed vertically in the layer structure within the at least one spacer layer (109, 417) and configured to surround the VCSEL device; and an annealed n-type ion implant region disposed vertically in the layer structure within the at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) and configured to overlie the annealed oxygen implant region and surround the VCSEL device; an anode that contacts the at least one top p-type layer (115, 117, 429, 431, 433, 435, 437, 439, 441) of the at least one VCSEL device; and a cathode that contacts the at least one bottom n-type layer (105, 411, 413) of the at least one VCSEL device; wherein the anode and the cathode are electrically coupled to the at least one VCSEL device; wherein the anode overlies both the annealed n-type ion implant region and the annealed oxygen implant region; and wherein the at least one intermediate p-type layer (107, 415) has a built-in hole charge Q p, the at least one bottom n-type layer (107, 415) has a built-in electron charge Q n, and the built-in hole charge Q p relative to the built-in electron charge Q n is configured for diode current-voltage characteristics of the VCSEL device based on voltages applied to the anode and the cathode.