A semiconductor pressure sensor (100, 200, 300, 400) for determining an external pressure exerted on the sensor, comprising: - a membrane as part of a semiconductor substrate for being deformed due to the external pressure, having a membrane edge and a membrane thickness; - a first resistor pair located on or adjacent to a first side portion of the membrane, the first resistor pair comprising a first resistor connected between a first bias node and a first output node, and a second resistor connected between said first bias node and a second output node different from the first output node, the resistance of the second resistor being equal to that of the first resistor; - a first current source connected or connectable to the first output node and adapted for causing a first predefined current to flow through the first resistor so that the first output node assumes a first output voltage (Vout-); - a second current source connected or connectable to the second output node and adapted for causing a second predefined current to flow through the second resistor so that the second output node assumes a second output voltage (Vout+), wherein the second predefined current is substantially equal to the first predefined current; - the first resistor comprising one or more first elongated piezo-resistive strips arranged in a first direction for measuring deformation of the membrane due to the external pressure to be measured, the second resistor comprising one or more second elongated piezo-resistive strips arranged in a second direction for measuring deformation of the membrane due to the external pressure to be measured, wherein the second direction is substantially perpendicular to the first direction; - the first and second output voltage (Vout-, Vout+) forming a first differential voltage signal (ΔVout) indicative of the external pressure to be measured. - a membrane as part of a semiconductor substrate for being deformed due to the external pressure, having a membrane edge and a membrane thickness; - a first resistor pair located on or adjacent to a first side portion of the membrane, the first resistor pair comprising a first resistor connected between a first bias node and a first output node, and a second resistor connected between said first bias node and a second output node different from the first output node, the resistance of the second resistor being equal to that of the first resistor; - a first current source connected or connectable to the first output node and adapted for causing a first predefined current to flow through the first resistor so that the first output node assumes a first output voltage (Vout-); - a second current source connected or connectable to the second output node and adapted for causing a second predefined current to flow through the second resistor so that the second output node assumes a second output voltage (Vout+), wherein the second predefined current is substantially equal to the first predefined current; - the first resistor comprising one or more first elongated piezo-resistive strips arranged in a first direction for measuring deformation of the membrane due to the external pressure to be measured, the second resistor comprising one or more second elongated piezo-resistive strips arranged in a second direction for measuring deformation of the membrane due to the external pressure to be measured, wherein the second direction is substantially perpendicular to the first direction; - the first and second output voltage (Vout-, Vout+) forming a first differential voltage signal (ΔVout) indicative of the external pressure to be measured.