A light emitting device comprising: a) a semiconductor laser element having first and second emission faces (40b 1, 40b 2) for emitting laser light, the first and second emission faces (40b 1, 40b 2) opposing each other; b) a supporting base having first and second concave portions (20a 1; 20a 2) on first and second opposite surfaces, and supporting the semiconductor laser element in such a manner that the first emission face (40b 1) of the semiconductor laser element is exposed to a bottom face of the first concave portion (20a 1), and the second emission face (40b 2) of the semiconductor laser element is exposed to a bottom face of the second concave portion (20a 2); c) a first light guiding body (40 1) buried in the first concave portion (20a 1) of the supporting base, guiding a first laser light emitted from the first emission face (40b 1) of the semiconductor laser element, and having a first incident face (40a 1) to which the first laser light enters, and a third emission face from which the first laser light travelling through the first light guiding body (40 1) is emitted, the first incident face (40a 1) of the first light guiding body (40 1) being such a curved face that an incident angle of the first laser light is within a first predetermined range including the Brewster angle in a plane formed by a travelling direction of the first laser light and a short axis of a light emitting spot of the first laser light; d) a second light guiding body (40 2) buried in the second concave portion (20a 2) of the supporting base, guiding a second laser light emitted from the second emission face (40b 2) of the semiconductor laser element, and having a second incident face (40a 2) to which the second laser light enters, and a fourth emission face from which the second laser light travelling through the second light guiding body (40 2) is emitted, the second incident face (40a 2) of the second light guiding body (40 2) being such a curved face that an incident angle of the second laser light is within a second predetermined range including the Brewster angle in a plane formed by a travelling direction of the second laser light and a short axis of a light emitting spot of the second laser light; e) a first fluorescent substance (42 1) scattered in the first light guiding body (40 1), absorbing the first laser light, and emitting the first light having a different wavelength from a wavelength of the first laser light;and f) a second fluorescent substance (42 2) scattered in the second light guiding body (40 2), absorbing the second laser light, and emitting the second light having a different wavelength from a wavelength of the second laser light. a) a semiconductor laser element having first and second emission faces (40b 1, 40b 2) for emitting laser light, the first and second emission faces (40b 1, 40b 2) opposing each other; b) a supporting base having first and second concave portions (20a 1; 20a 2) on first and second opposite surfaces, and supporting the semiconductor laser element in such a manner that the first emission face (40b 1) of the semiconductor laser element is exposed to a bottom face of the first concave portion (20a 1), and the second emission face (40b 2) of the semiconductor laser element is exposed to a bottom face of the second concave portion (20a 2); c) a first light guiding body (40 1) buried in the first concave portion (20a 1) of the supporting base, guiding a first laser light emitted from the first emission face (40b 1) of the semiconductor laser element, and having a first incident face (40a 1) to which the first laser light enters, and a third emission face from which the first laser light travelling through the first light guiding body (40 1) is emitted, the first incident face (40a 1) of the first light guiding body (40 1) being such a curved face that an incident angle of the first laser light is within a first predetermined range including the Brewster angle in a plane formed by a travelling direction of the first laser light and a short axis of a light emitting spot of the first laser light; d) a second light guiding body (40 2) buried in the second concave portion (20a 2) of the supporting base, guiding a second laser light emitted from the second emission face (40b 2) of the semiconductor laser element, and having a second incident face (40a 2) to which the second laser light enters, and a fourth emission face from which the second laser light travelling through the second light guiding body (40 2) is emitted, the second incident face (40a 2) of the second light guiding body (40 2) being such a curved face that an incident angle of the second laser light is within a second predetermined range including the Brewster angle in a plane formed by a travelling direction of the second laser light and a short axis of a light emitting spot of the second laser light; e) a first fluorescent substance (42 1) scattered in the first light guiding body (40 1), absorbing the first laser light, and emitting the first light having a different wavelength from a wavelength of the first laser light;and f) a second fluorescent substance (42 2) scattered in the second light guiding body (40 2), absorbing the second laser light, and emitting the second light having a different wavelength from a wavelength of the second laser light.