Process for the production of a photovoltaic solar cell, comprising the following process steps: A texturing of a front side of a silicon semiconductor substrate which has been doped with a base doping type, B creation of at least one selective doping structure on the front side of the semiconductor substrate by creating on the front side at least one planar low-doping region having a first doping profile in the semiconductor substrate and creating within the first low-doping region at least one local high-doping region of a second doping profile, the low-doping region and the high-doping region each being formed with an emitter doping type which is opposite to the base doping type, and the high-doping region being formed with a lower cross-conduction resistance than the low-doping region, and C application of at least one metallic emitter contact structure indirectly or directly to the front side of the semiconductor substrate, at least partly in the regions of local high doping, the emitter contact structure being electrically conductively connected to the high-doping region and application of at least one metallic base contact structure indirectly or directly to the rear side of the semiconductor substrate, the base contact structure being electrically conductively connected to a region of the semiconductor substrate of the base doping type, wherein between process steps B and C, optionally with interposition of further intermediate steps, in a process step B1 a silicon oxide layer (5a, 5b) is created simultaneously on the front and rear sides of the semiconductor substrate by means of thermal oxidation, with at least the front-side silicon oxide layer being created in a thickness of less than 150 nm, wherein the silicon oxide layers (5a, 5b) on the front and rear sides are created after the creation of the least one selective doping structure and wherein the silicon oxide layers (5a, 5b) on the front and rear sides are not removed again in the process steps following process step B1, characterised in that between process step B and process step B1 a layer that is close to the surface is removed at least on the front side of the substrate. A texturing of a front side of a silicon semiconductor substrate which has been doped with a base doping type, B creation of at least one selective doping structure on the front side of the semiconductor substrate by creating on the front side at least one planar low-doping region having a first doping profile in the semiconductor substrate and creating within the first low-doping region at least one local high-doping region of a second doping profile, the low-doping region and the high-doping region each being formed with an emitter doping type which is opposite to the base doping type, and the high-doping region being formed with a lower cross-conduction resistance than the low-doping region, and C application of at least one metallic emitter contact structure indirectly or directly to the front side of the semiconductor substrate, at least partly in the regions of local high doping, the emitter contact structure being electrically conductively connected to the high-doping region and application of at least one metallic base contact structure indirectly or directly to the rear side of the semiconductor substrate, the base contact structure being electrically conductively connected to a region of the semiconductor substrate of the base doping type,