A material comprising a glass substrate coated on one face with a stack of thin layers with reflective properties in the infrared and/or in solar radiation, comprising at least one metallic functional layer, in particular based on silver or a metallic alloy containing silver and at least two anti-reflective coatings (120, 160), said anti-reflective coatings each comprising at least one dielectric layer (125, 165), said functional layer being arranged between the two anti-reflective coatings (120, 160), characterized in that said underlying anti-reflective coating, located under said functional layer towards said substrate, comprises: - a zinc-based oxide underlayer, ZnO which is located under and in contact with said functional layer, with a physical thickness of said zinc-based oxide underlayer, ZnO which is between 0.3 and 4.4 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm; - a dielectric underlayer of zinc and tin-based mixed oxide, Sn i Zn j O, with a physical thickness of said dielectric underlayer of zinc and tin-based mixed oxide, Sn i Zn j O which is between 3.0 and 50.0 nm, or even between 4.0 and 40.0 nm, or even between 5.0 and 35.0 nm; - a nitride dielectric underlayer based on silicon, Si 3 N 4 or based on silicon-zirconium, Si x N y Zr z, which is located under and in contact with said dielectric underlayer of tin and zinc-based oxide, Sn i Zn j O, with a physical thickness of said nitride dielectric underlayer based on silicon, S I3 N 4, or based on silicon-zirconium, Si x N y Zr z which is between 5.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 25.0 nm; in that said overlying anti-reflective coating, located above said functional layer opposite said substrate comprises: - an overlayer of zinc-based oxide, ZnO, with a physical thickness of said overlayer of zinc-based oxide, ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; and - a dielectric overlayer which is located on said overlayer of zinc-based oxide, ZnO and, preferably a dielectric overlayer of silicon-based nitride, Si 3 N 4, and in that an overblocking layer of titanium-based oxide, TiO x is located over and in contact with said functional layer and under said overlying anti-reflective coating, with a physical thickness of said blocking layer of titanium-based oxide, TiO x which is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm. - a zinc-based oxide underlayer, ZnO which is located under and in contact with said functional layer, with a physical thickness of said zinc-based oxide underlayer, ZnO which is between 0.3 and 4.4 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm; - a dielectric underlayer of zinc and tin-based mixed oxide, Sn i Zn j O, with a physical thickness of said dielectric underlayer of zinc and tin-based mixed oxide, Sn i Zn j O which is between 3.0 and 50.0 nm, or even between 4.0 and 40.0 nm, or even between 5.0 and 35.0 nm; - a nitride dielectric underlayer based on silicon, Si 3 N 4 or based on silicon-zirconium, Si x N y Zr z, which is located under and in contact with said dielectric underlayer of tin and zinc-based oxide, Sn i Zn j O, with a physical thickness of said nitride dielectric underlayer based on silicon, S I3 N 4, or based on silicon-zirconium, Si x N y Zr z which is between 5.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 25.0 nm; in that said overlying anti-reflective coating, located above said functional layer opposite said substrate comprises: - an overlayer of zinc-based oxide, ZnO, with a physical thickness of said overlayer of zinc-based oxide, ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; and - a dielectric overlayer which is located on said overlayer of zinc-based oxide, ZnO and, preferably a dielectric overlayer of silicon-based nitride, Si 3 N 4, - an overlayer of zinc-based oxide, ZnO, with a physical thickness of said overlayer of zinc-based oxide, ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; and - a dielectric overlayer which is located on said overlayer of zinc-based oxide, ZnO and, preferably a dielectric overlayer of silicon-based nitride, Si 3 N 4, and in that an overblocking layer of titanium-based oxide, TiO x is located over and in contact with said functional layer and under said overlying anti-reflective coating, with a physical thickness of said blocking layer of titanium-based oxide, TiO x which is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm.