mhurhangee/ep-ind-claims huggingface dataset:
A method of forming a power semiconductor device comprising: forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; the epitaxial layer being formed by a buried layer formed over the first semiconductor layer, and by a second semiconductor layer formed over the buried layer, the buried layer having a higher doping concentration than the second semiconductor layer by a factor of more than 5, forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer through the second semiconductor layer into the buried layer, wherein a PN junction in the buried layer between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region, wherein in operation of the semiconductor device the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device. forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; the epitaxial layer being formed by a buried layer formed over the first semiconductor layer, and by a second semiconductor layer formed over the buried layer, the buried layer having a higher doping concentration than the second semiconductor layer by a factor of more than 5, forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer through the second semiconductor layer into the buried layer, wherein a PN junction in the buried layer between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region, wherein in operation of the semiconductor device the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.
A substrate support structure for clamping a substrate on a surface by means of a capillary layer of a liquid, the surface having an outer edge and comprising one or more substrate supporting elements for receiving the substrate to be clamped, wherein the one or more substrate supporting elements are arranged to provide support for the substrate at a plurality of support locations, wherein the substrate support structure further comprises a sealing structure circumscribing the surface and having a top surface or edge (22, 24, 26) forming a sealing rim, said substrate support structure being characterized in that: a distance (c) between the outer edge of the surface and an outermost one of the support locations is greater than a distance (d) between the outer edge and the sealing rim, and a distance (c+d) between the sealing rim and the outermost support location is greater than a maximum distance between adjacent support locations. a distance (c) between the outer edge of the surface and an outermost one of the support locations is greater than a distance (d) between the outer edge and the sealing rim, and a distance (c+d) between the sealing rim and the outermost support location is greater than a maximum distance between adjacent support locations.
Corded tool, in particular vacuum cleaner, having an electrical connection part that can be switched between a locking position and a release position, wherein the tool forms an undercut for a plug connector that is connected to the connection part in the locking position, and the connection part is mounted such that it can rotate about an axis of rotation, and characterized in that the connection part executes a pivoting movement between the release position and the locking position.
An additive manufacturing apparatus comprising: a feed module configured to operably couple with a first end portion of a foil; a take-up module configured to operably couple with a second end portion of a foil; at least one stage configured to hold one or more cured layers of a resin that form a component; a radiant energy device positioned opposite to the at least one stage, the radiant energy device operable to generate and project radiant energy in a predetermined pattern; an actuator configured to change a relative position of the at least one stage and the foil; and an accumulator positioned between the feed module and the take-up module, the accumulator configured to retain an intermediate portion of the foil to allow a first portion of the foil upstream of the accumulator to move at a first speed and a second portion of the foil downstream of the accumulator to move at a second speed during a defined time period; characterized in that it further comprises: a material retention assembly within the accumulator; wherein the material retention assembly includes a pneumatic actuation zone that is configured to selectively interact with the foil by producing a force on a first side of the foil, the first side of the foil being opposite the resin. a feed module configured to operably couple with a first end portion of a foil; a take-up module configured to operably couple with a second end portion of a foil; at least one stage configured to hold one or more cured layers of a resin that form a component; a radiant energy device positioned opposite to the at least one stage, the radiant energy device operable to generate and project radiant energy in a predetermined pattern; an actuator configured to change a relative position of the at least one stage and the foil; and an accumulator positioned between the feed module and the take-up module, the accumulator configured to retain an intermediate portion of the foil to allow a first portion of the foil upstream of the accumulator to move at a first speed and a second portion of the foil downstream of the accumulator to move at a second speed during a defined time period; characterized in that it further comprises: a material retention assembly within the accumulator; wherein the material retention assembly includes a pneumatic actuation zone that is configured to selectively interact with the foil by producing a force on a first side of the foil, the first side of the foil being opposite the resin.
A method of determining a nuclear magnetic resonance relaxation time of a probe and/or a nuclear magnetic resonance spectrum of a probe, wherein the probe comprises first nuclei with a first gyromagnetic ratio and second nuclei with a second gyromagnetic ratio, and the first gyromagnetic ratio is larger than the second gyromagnetic ratio, the method comprising the following steps: a first step of polarizing the first nuclei and the second nuclei by applying a longitudinal static magnetic field B 0 to the probe; a second step of exchanging the polarizations of the first nuclei and the second nuclei by irradiating at least one swap sequence (SWAP) of transverse magnetic field pulses, wherein the temporal length of the at least one swap sequence (SWAP) is substantially identical to the inverse of the longitudinal spin-spin interaction strength between the first nuclei and the second nuclei; a third step of transversely magnetizing the second nuclei by irradiating at least one excitation pulse and measuring the resulting magnetization signal; a fourth step of determining the nuclear magnetic resonance relaxation time and/or the nuclear magnetic resonance spectrum based on the measured magnetization signal. a first step of polarizing the first nuclei and the second nuclei by applying a longitudinal static magnetic field B 0 to the probe; a second step of exchanging the polarizations of the first nuclei and the second nuclei by irradiating at least one swap sequence (SWAP) of transverse magnetic field pulses, wherein the temporal length of the at least one swap sequence (SWAP) is substantially identical to the inverse of the longitudinal spin-spin interaction strength between the first nuclei and the second nuclei; a third step of transversely magnetizing the second nuclei by irradiating at least one excitation pulse and measuring the resulting magnetization signal; a fourth step of determining the nuclear magnetic resonance relaxation time and/or the nuclear magnetic resonance spectrum based on the measured magnetization signal.
A thermoplastic molding composition consisting of: A Mixture of at least one polyamide A1, at least one polyphenylene ether A2 and optionally a compatibilizer A3 and optionally an olefinic and/or vinylaromatic polymer A4; B 10 to 60% by weight of glass filler, the glass composition of which comprises at least 10% by weight of boron oxide and at most 15% by weight for the sum of magnesium oxide and calcium oxide; C 1 to 8% by weight of LDS additive; D 0 to 5% by weight of additives other than components A, B and C; wherein 80 to 100% by weight of mixture A consists of a mixture M of components A1, A2 and A3 and 0 to 20% by weight of component A4, each based on the sum of components M and A4, and wherein the sum of components M and A4 gives 100% by weight of mixture A; and where the mixture M consists of from 36 to 92% by weight of component A2, from 8 to 60% by weight of component A1 and from 0 to 4% by weight of component A3, in each case based on the sum of components A1 to A3, and where the sum of components A1 to A3 gives 100% by weight of the mixture M; and the sum of components A to D being 100% by weight of the molding composition. A Mixture of at least one polyamide A1, at least one polyphenylene ether A2 and optionally a compatibilizer A3 and optionally an olefinic and/or vinylaromatic polymer A4; B 10 to 60% by weight of glass filler, the glass composition of which comprises at least 10% by weight of boron oxide and at most 15% by weight for the sum of magnesium oxide and calcium oxide; C 1 to 8% by weight of LDS additive; D 0 to 5% by weight of additives other than components A, B and C; wherein 80 to 100% by weight of mixture A consists of a mixture M of components A1, A2 and A3 and 0 to 20% by weight of component A4, each based on the sum of components M and A4, and wherein the sum of components M and A4 gives 100% by weight of mixture A; and where the mixture M consists of from 36 to 92% by weight of component A2, from 8 to 60% by weight of component A1 and from 0 to 4% by weight of component A3, in each case based on the sum of components A1 to A3, and where the sum of components A1 to A3 gives 100% by weight of the mixture M; and the sum of components A to D being 100% by weight of the molding composition.
A SPAD-type photodiode (200; 300) comprising, in a semiconductor substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first conductivity type having a greater doping level than the substrate, extending from the lower surface of the first region, the second region having, in top view, a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region (201; 301) of the first conductivity type having a doping level greater than that of the substrate extending from the upper surface of the substrate, the third region (201; 301) laterally surrounding the first region; and a fourth buried region of the first conductivity type having a doping level greater than that of the substrate, forming a peripheral ring connecting the second region to the third region (201; 301) so that the lateral surfaces and the lower surface of the first region are totally surrounded by the assembly formed by the second, third, and fourth regions. a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first conductivity type having a greater doping level than the substrate, extending from the lower surface of the first region, the second region having, in top view, a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region (201; 301) of the first conductivity type having a doping level greater than that of the substrate extending from the upper surface of the substrate, the third region (201; 301) laterally surrounding the first region; and a fourth buried region of the first conductivity type having a doping level greater than that of the substrate, forming a peripheral ring connecting the second region to the third region (201; 301) so that the lateral surfaces and the lower surface of the first region are totally surrounded by the assembly formed by the second, third, and fourth regions.
Magnetic construction toy containing elements in the form of polyhedrons with magnets placed inside each face and characterized by elements made in the form of tetrahedron, octahedron or semi-tetrahedron formed by tetrahedron division into equal parts along the vertical axis; wherein, in the elements made in the form of tetrahedron, octahedron, as well as in semi-tetrahedrons joint into tetrahedron and formed by tetrahedron division into equal parts along the vertical axis,; heteropolar magnets are placed inside each face of octahedron or tetrahedron or semi-tetrahedron and located pairwise and symmetrical towards bisectors of face angles, as well as equally spaced from face edges that are the sides of these angles; the magnets are located with polarity alternation; the elements face edges that are the sides of regular triangles, squares, bottoms of irregular isosceles triangles and hypotenuses of right triangles are equal in length.
An apparatus for conveying articles towards corresponding points of use; the articles being defined by paper articles and being in the form of rolls, preferably rolls of toilet paper or of paper towels; the apparatus being located between an upstream machine for making the articles, in the form of a saw machine for cutting the articles, from a respective elongate element or log, and at least corresponding first and second means for conveying the articles towards corresponding downstream points of use, in particular in the form of packaging machines, such as packing machines by which the articles are packed in corresponding wrappers, preferably made of plastic film; the apparatus being adapted to receive the articles from the upstream machine, from respective end conveyor means thereof which are adapted to advance the articles while supporting or engaging them on a respective lateral flank; the apparatus comprising conveyor means which receive the articles from the upstream machine which makes the articles and a supporting frame for the conveyor means and for movable conveyor means which are adapted to pass the articles respectively at least to first means or second means for conveying them downstream; wherein the conveyor means for receiving the articles comprise transporting means, which are adapted to engage the articles at an off-centre lower zone which is laterally opposite the lateral engagement zone where the articles are engaged by the lateral supporting end conveyor means of the upstream machine, and wherein the conveyor means comprise transporting means, which are adapted to engage the articles at an off-centre lower zone corresponding to that where the articles are engaged by the lateral supporting end conveyor means of the upstream machine; said respective transporting means (141 and 143) which are adapted to engage the articles at a respective off-centre lower zone being in the form of a respective endless, elongate, or cable-like, element; and wherein said transporting means which are adapted to engage the articles at a corresponding off-centre lower zone corresponding to that where the articles are engaged by the lateral supporting end conveyor means of the upstream machine have a respective free end which extends at the point where the articles are released by the lateral supporting end conveyor means of the upstream machine; characterised in that said transporting means which are adapted to engage the articles at an off-centre lower zone, which is laterally opposite the lateral engagement zone where the articles are engaged by the lateral supporting conveyor means of the upstream machine, extend longitudinally beyond the free end of the transporting means which are adapted to engage the articles at a corresponding off-centre lower zone corresponding to that where the articles are engaged by the lateral supporting end conveyor means of the upstream machine.
A spark plug comprising: a cylindrical metal shell; a cylindrical insulator which is fitted in the metal shell and includes a front end portion exposed from a front end portion of the metal shell; a center electrode which is disposed inside the insulator so that a front end portion of the center electrode is exposed from the front end portion of the insulator; a ground electrode which is connected to the metal shell at one end portion of the ground electrode and is disposed so as to face the front end portion of the center electrode at the other end portion of the ground electrode, so as to form a spark discharge gap (g) between the other end portion of the ground electrode and the front end portion of the center electrode; and a packing which is mounted between the metal shell and the insulator for establishing a gastight seal between the metal shell and the insulator, wherein the metal shell is formed with a ledge portion having inside diameter reduced gradually towards the front end portion so as to form a packing engagement plane, the insulator is formed with a step portion having outside diameter reduced gradually towards the front end portion so as to form a packing engagement plane which faces the ledge portion, and the packing is disposed between the ledge portion and the step portion, characterized in that a distance between the ledge portion and the step portion decreases as the ledge portion and the step portion extend radially inwards, and in that an angle (θ) formed by the ledge portion and the step portion is one degree or larger and ten degrees or smaller. a cylindrical metal shell; a cylindrical insulator which is fitted in the metal shell and includes a front end portion exposed from a front end portion of the metal shell; a center electrode which is disposed inside the insulator so that a front end portion of the center electrode is exposed from the front end portion of the insulator; a ground electrode which is connected to the metal shell at one end portion of the ground electrode and is disposed so as to face the front end portion of the center electrode at the other end portion of the ground electrode, so as to form a spark discharge gap (g) between the other end portion of the ground electrode and the front end portion of the center electrode; and a packing which is mounted between the metal shell and the insulator for establishing a gastight seal between the metal shell and the insulator, wherein the metal shell is formed with a ledge portion having inside diameter reduced gradually towards the front end portion so as to form a packing engagement plane, the insulator is formed with a step portion having outside diameter reduced gradually towards the front end portion so as to form a packing engagement plane which faces the ledge portion, and the packing is disposed between the ledge portion and the step portion, characterized in that a distance between the ledge portion and the step portion decreases as the ledge portion and the step portion extend radially inwards, and in that an angle (θ) formed by the ledge portion and the step portion is one degree or larger and ten degrees or smaller.
An optoelectronic sensor for monitoring a monitored area, comprising a scanning unit, a camera module arranged in the scanning unit and having a receiving optics and an image sensor with at least two receiving lines (44a-c) of light-receiving elements, and a control and evaluation unit for reading out image data of the image sensor, the image sensor being optically inclined in the direction of the optical axis of the camera module so that the optical path lengths from the receiving optics to the respective receiving lines (44a-c) differ, characterized in that the scanning unit is movable about an axis of rotation for periodically scanning the monitoring area, and in that the control and evaluation unit is configured to use distance data of a light time-of-flight module to select a receiving line (44a-c) whose image data are read out and/or to determine a line of sharpest image data by image processing.
A space for cultivating biological organisms, such as plants, insects, marine life or the like, the space having an air conditioning device for conditioning ambient air and at least one shelf disposed in an interior of the space, a vertical supply-air current being realized in the interior by means of the air conditioning device, the shelf being made of a frame made of vertically disposed racks and a plurality of superjacent shelf boards disposed horizontally on the racks at intervals and intended for receiving organisms, the shelf having an open design so that the ambient air flows through a receiving space intended for the organisms and limited by the shelf boards, the shelf having a flow guide element by means of which the vertical supply-air current is deflected at least partially to a horizontal air current in the receiving space, the flow guide element being made of a fin which is fastened to the shelf, characterized in that the fin protrudes into the interior over a lateral end of the shelf board and/or lateral dimensions of the frame.
An integrated circuit, comprising: a substrate; a buried-oxide, "BOX", layer disposed on the substrate; a semiconductor layer disposed on the BOX layer, wherein the semiconductor layer includes an optical coupler and an optical waveguide, and wherein, during operation, the optical coupler is configured to couple an optical signal into the optical waveguide; an isolator disposed on the semiconductor layer; and an optical source, disposed on the isolator, the source including a lens, wherein, during operation, the optical source is configured to generate the optical signal that propagates toward the isolator, and the lens is arranged to focus the optical signal; wherein, during operation, the isolator is configured to reduce back reflection of the optical signal toward the optical source; and wherein the optical coupler includes a grating coupler. a substrate; a buried-oxide, "BOX", layer disposed on the substrate; a semiconductor layer disposed on the BOX layer, wherein the semiconductor layer includes an optical coupler and an optical waveguide, and wherein, during operation, the optical coupler is configured to couple an optical signal into the optical waveguide; an isolator disposed on the semiconductor layer; and an optical source, disposed on the isolator, the source including a lens, wherein, during operation, the optical source is configured to generate the optical signal that propagates toward the isolator, and the lens is arranged to focus the optical signal; wherein, during operation, the isolator is configured to reduce back reflection of the optical signal toward the optical source; and wherein the optical coupler includes a grating coupler.