A detector (1;1a;1b;1c;1d) for a Compton camera, comprising: a plurality of first radiation scattering layers stacked in a first direction; a plurality of second radiation scattering layers stacked in the first direction; and a plurality of radiation absorption layers stacked in the first direction and disposed between the plurality of first radiation scattering layers and the plurality of second radiation scattering layer, such that the plurality of first radiation scattering layers, the plurality of radiation absorption layers and the plurality of second radiation scattering layers are arranged in parallel to each other in a stacked state, and at a predetermined pitch with respect to each other, wherein the plurality of first radiation scattering layers are disposed on one side with respect to the plurality of radiation absorption layers, and wherein the plurality of second radiation scattering layers are disposed on another side with respect to the plurality of radiation absorption layers; wherein the plurality of the first radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a first detector, and wherein the plurality of the second radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a second detector; wherein the plurality of the first radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on one side with respect to the radiation absorption layer; and wherein the plurality of the second radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on the other side with respect to the radiation absorption layer; wherein silicon (Si) is used as a material for the first and second radiation scattering layers; and wherein cadmium telluride (CdTe) or cadmium zinc telluride (CdZnTe) is used as a material for the radiation absorption layer. a plurality of first radiation scattering layers stacked in a first direction; a plurality of second radiation scattering layers stacked in the first direction; and a plurality of radiation absorption layers stacked in the first direction and disposed between the plurality of first radiation scattering layers and the plurality of second radiation scattering layer, such that the plurality of first radiation scattering layers, the plurality of radiation absorption layers and the plurality of second radiation scattering layers are arranged in parallel to each other in a stacked state, and at a predetermined pitch with respect to each other, wherein the plurality of first radiation scattering layers are disposed on one side with respect to the plurality of radiation absorption layers, and wherein the plurality of second radiation scattering layers are disposed on another side with respect to the plurality of radiation absorption layers; wherein the plurality of the first radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a first detector, and wherein the plurality of the second radiation scattering layers and the plurality of the radiation absorption layers configure at least a part of a second detector; wherein the plurality of the first radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on one side with respect to the radiation absorption layer; and wherein the plurality of the second radiation scattering layers is configured to Compton-scatter a radiation from a radiation source in a hemisphere on the other side with respect to the radiation absorption layer; wherein silicon (Si) is used as a material for the first and second radiation scattering layers; and wherein cadmium telluride (CdTe) or cadmium zinc telluride (CdZnTe) is used as a material for the radiation absorption layer.