Integrated gate commutated thyristor with a cathode side and an anode side, which is arranged opposite to the cathode side, the device comprising a four-layer structure with layers of different conductivity types, said four-layer structure defining an inner structure of a thyristor, which can be turned-off via a gate electrode, and the layers being arranged between a cathode electrode on the cathode side and an anode electrode on the anode side in the following order: a cathode layer of a first conductivity type with a central area, which is surrounded by a lateral edge, which cathode layer is in direct electrical contact to the cathode electrode, a base layer of a second conductivity type, a drift layer of the first conductivity type, wherein the drift layer has a lower doping concentration than the cathode layer, an anode layer of the second conductivity type, which is in electrical contact to the anode electrode, wherein the gate electrode is arranged on the cathode side lateral to the cathode electrode and the gate electrode is in electrical contact to the base layer, wherein the base layer comprises at least one first layer with a first maximum doping concentration in a first depth as a continuous layer, which is contacting the central area of the cathode layer, wherein a resistance reduction layer (10, 10', 10"), in which the resistance at the junction between the lateral edge of the cathode layer and the base layer is reduced, is of the second conductivity type, wherein the resistance reduction layer (10, 10', 10") has a higher doping concentration than the first layer, and wherein the resistance reduction layer (10, 10', 10") is arranged between the first layer and the cathode layer and is in direct contact with the lateral edge of the cathode layer towards the first layer, characterized in that the resistance reduction layer is separated from the gate electrode by the first layer. a cathode layer of a first conductivity type with a central area, which is surrounded by a lateral edge, which cathode layer is in direct electrical contact to the cathode electrode, a base layer of a second conductivity type, a drift layer of the first conductivity type, wherein the drift layer has a lower doping concentration than the cathode layer, an anode layer of the second conductivity type, which is in electrical contact to the anode electrode, wherein the gate electrode is arranged on the cathode side lateral to the cathode electrode and the gate electrode is in electrical contact to the base layer, wherein the base layer comprises at least one first layer with a first maximum doping concentration in a first depth as a continuous layer, which is contacting the central area of the cathode layer, wherein a resistance reduction layer (10, 10', 10"), in which the resistance at the junction between the lateral edge of the cathode layer and the base layer is reduced, is of the second conductivity type, wherein the resistance reduction layer (10, 10', 10") has a higher doping concentration than the first layer, and wherein the resistance reduction layer (10, 10', 10") is arranged between the first layer and the cathode layer and is in direct contact with the lateral edge of the cathode layer towards the first layer, characterized in that the resistance reduction layer is separated from the gate electrode by the first layer.