An electrostatic discharge protection structure, comprising: a substrate (110; 210) being of a first type of electrical conductivity; a well region (121; 221) in a first surface of the substrate (110; 210) and being of a second type of electrical conductivity; a substrate contact region (132; 232) in the first surface of the substrate (110; 210) and being of the first type of electrical conductivity; a well contact region (131; 231) in the well region (121; 221) and being of the second type of electrical conductivity; a substrate counter-doped region (134; 234) in the substrate facing the first surface of the substrate (110; 210), between the substrate contact region (132; 232) and the well contact region (131; 231), and being of the second type of electrical conductivity; a well counter-doped region (133; 233) in the well region (121; 221) facing the first surface of the substrate (110; 210), between the substrate contact region (132; 232) and the well contact region (131; 231), and being of the first type of electrical conductivity; a connecting region (135; 236) at a lateral junction between the substrate (110; 210) and the well region (121; 221) and between the substrate counter-doped region (134; 234) and the well counter-doped region (133; 233), the connecting region (135; 236) connecting and in contact with the substrate (110; 210) and the well region (121; 221); a first isolation region (141; 241) comprising an insulator in the substrate (110; 210) and between the substrate counter-doped region (134; 234) and the connecting region (135; 236); a second isolation region (142; 242) comprising a further insulator in the well region (121; 221) and between the well counter-doped region (133; 233) and the connecting region (135; 236); characterized in an oxide layer (151; 251) on the first surface of the substrate, the oxide layer (151, 251) being not in contact with the connecting region (135; 136), wherein a second end of the oxide layer (151; 251) is adjacent to the connecting region (135; 236), wherein a field plate structure (161; 261) is disposed on the oxide layer (151; 251); wherein when the connecting region is of the second type of electrical conductivity, the oxide layer is configured such that a first end of the oxide layer is disposed on the first isolation region, wherein a second end of the oxide layer is disposed on the substrate, wherein the second end of the oxide layer lies between the first isolation region and the connecting region, or wherein when the connecting region is of the first type of electrical conductivity, the oxide layer is configured such that the first end of the oxide layer is disposed on the second isolation region, wherein the second end of the oxide layer is disposed on the well region, wherein the second end of the oxide layer lies between the second isolation region and the connecting region. a substrate (110; 210) being of a first type of electrical conductivity; a well region (121; 221) in a first surface of the substrate (110; 210) and being of a second type of electrical conductivity; a substrate contact region (132; 232) in the first surface of the substrate (110; 210) and being of the first type of electrical conductivity; a well contact region (131; 231) in the well region (121; 221) and being of the second type of electrical conductivity; a substrate counter-doped region (134; 234) in the substrate facing the first surface of the substrate (110; 210), between the substrate contact region (132; 232) and the well contact region (131; 231), and being of the second type of electrical conductivity; a well counter-doped region (133; 233) in the well region (121; 221) facing the first surface of the substrate (110; 210), between the substrate contact region (132; 232) and the well contact region (131; 231), and being of the first type of electrical conductivity; a connecting region (135; 236) at a lateral junction between the substrate (110; 210) and the well region (121; 221) and between the substrate counter-doped region (134; 234) and the well counter-doped region (133; 233), the connecting region (135; 236) connecting and in contact with the substrate (110; 210) and the well region (121; 221); a first isolation region (141; 241) comprising an insulator in the substrate (110; 210) and between the substrate counter-doped region (134; 234) and the connecting region (135; 236); a second isolation region (142; 242) comprising a further insulator in the well region (121; 221) and between the well counter-doped region (133; 233) and the connecting region (135; 236); characterized in an oxide layer (151; 251) on the first surface of the substrate, the oxide layer (151, 251) being not in contact with the connecting region (135; 136), wherein a second end of the oxide layer (151; 251) is adjacent to the connecting region (135; 236), wherein a field plate structure (161; 261) is disposed on the oxide layer (151; 251); wherein when the connecting region is of the second type of electrical conductivity, the oxide layer is configured such that a first end of the oxide layer is disposed on the first isolation region, wherein a second end of the oxide layer is disposed on the substrate, wherein the second end of the oxide layer lies between the first isolation region and the connecting region, or wherein when the connecting region is of the first type of electrical conductivity, the oxide layer is configured such that the first end of the oxide layer is disposed on the second isolation region, wherein the second end of the oxide layer is disposed on the well region, wherein the second end of the oxide layer lies between the second isolation region and the connecting region.