A perpendicular magnetic tunneling junction, MTJ, comprising: a free magnetic layer having perpendicular magnetic anisotropy, wherein the free magnetic layer comprises iron-rich CoFeB having a thickness over 1.0nm; a fixed magnetic layer; a tunneling layer disposed between the free magnetic layer and the fixed magnetic layer; a magnetic anisotropy enhancing layer disposed on a side of the free magnetic layer opposite the tunneling layer; and a crystallization barrier layer disposed between the magnetic anisotropy enhancing layer and the free magnetic layer; wherein the crystallization barrier layer is in direct contact with the free magnetic layer and has a different microstructure than that of the magnetic anisotropy enhancing layer; wherein the free magnetic layer and the tunneling layer have a 001 crystal texture, wherein the magnetic anisotropy enhancing layer includes a material layer having 111 crystal texture, and wherein the crystallization barrier layer includes a material layer with amorphous microstructure, or 001 crystal texture, forming an interface with the free magnetic layer; wherein the magnetic anisotropy enhancing layer comprises a stack of magnetic and non-magnetic material layers, and wherein a magnetic layer of the stack is more proximate to the free magnetic layer than is any non-magnetic material layer of the stack; wherein the crystallization barrier layer further includes a second material layer with a composition other than that of the material layer forming the interface with the free magnetic layer, the second material layer being more susceptible to alloying with boron, B, than the material layer forming the interface with the free magnetic layer. a free magnetic layer having perpendicular magnetic anisotropy, wherein the free magnetic layer comprises iron-rich CoFeB having a thickness over 1.0nm; a fixed magnetic layer; a tunneling layer disposed between the free magnetic layer and the fixed magnetic layer; a magnetic anisotropy enhancing layer disposed on a side of the free magnetic layer opposite the tunneling layer; and a crystallization barrier layer disposed between the magnetic anisotropy enhancing layer and the free magnetic layer; wherein the crystallization barrier layer is in direct contact with the free magnetic layer and has a different microstructure than that of the magnetic anisotropy enhancing layer; wherein the free magnetic layer and the tunneling layer have a 001 crystal texture, wherein the magnetic anisotropy enhancing layer includes a material layer having 111 crystal texture, and wherein the crystallization barrier layer includes a material layer with amorphous microstructure, or 001 crystal texture, forming an interface with the free magnetic layer; wherein the magnetic anisotropy enhancing layer comprises a stack of magnetic and non-magnetic material layers, and wherein a magnetic layer of the stack is more proximate to the free magnetic layer than is any non-magnetic material layer of the stack; wherein the crystallization barrier layer further includes a second material layer with a composition other than that of the material layer forming the interface with the free magnetic layer, the second material layer being more susceptible to alloying with boron, B, than the material layer forming the interface with the free magnetic layer.