Method for producing an electronic structural element as a stack, which is formed from a plurality of material layers reacting to the application of an electrical field and a plurality of first and second electrode layers (3, 4), each material layer being arranged alternately between a first and a second electrode layer (3, 4), in which - at least one first and one second contacting structure (13, 14) are applied to at least one stack circumferential region (5, 6), so that every first electrode layer is contacted electrically by the first contacting structure and every second electrode layer is contacted electrically by the second contacting structure; wherein a) a stack is generated, in which the first electrode layers project above the at least one stack circumferential region (5, 6), and the second electrode layers come to lie within the material layers at a distance from the at least one stack circumferential region (5, 6); b) the first contacting structure is applied directly to the at least one stack circumferential region (5, 6), the first electrode layers which project from the at least one stack circumferential region (5, 6) being embedded in an electrically conductive manner into the first contacting structure; c) the second contacting structure is generated in that - the first and second electrode layers (3, 4) are exposed on the at least one stack circumferential region (5, 6); - a solvent-free insulating structure is generated by means of an additive method and insulates the first electrode layers electrically from the at least one stack circumferential region (5, 6), and - electrically conductive material is applied to the prepared stack circumferential region (5, 6) in order to form the second contacting structure, characterized in that the materials of the first and second electrode layers and the material layers are selected in such a way that, during the sintering of the stack, the second electrode layers shrink to a greater extent than the material layers and the material layers shrink to a greater extent than the first electrode layers. - at least one first and one second contacting structure (13, 14) are applied to at least one stack circumferential region (5, 6), so that every first electrode layer is contacted electrically by the first contacting structure and every second electrode layer is contacted electrically by the second contacting structure; a) a stack is generated, in which the first electrode layers project above the at least one stack circumferential region (5, 6), and the second electrode layers come to lie within the material layers at a distance from the at least one stack circumferential region (5, 6); b) the first contacting structure is applied directly to the at least one stack circumferential region (5, 6), the first electrode layers which project from the at least one stack circumferential region (5, 6) being embedded in an electrically conductive manner into the first contacting structure; c) the second contacting structure is generated in that - the first and second electrode layers (3, 4) are exposed on the at least one stack circumferential region (5, 6); - a solvent-free insulating structure is generated by means of an additive method and insulates the first electrode layers electrically from the at least one stack circumferential region (5, 6), and - electrically conductive material is applied to the prepared stack circumferential region (5, 6) in order to form the second contacting structure, - the first and second electrode layers (3, 4) are exposed on the at least one stack circumferential region (5, 6); - a solvent-free insulating structure is generated by means of an additive method and insulates the first electrode layers electrically from the at least one stack circumferential region (5, 6), and - electrically conductive material is applied to the prepared stack circumferential region (5, 6) in order to form the second contacting structure,