A laser light source for providing ultraviolet light, the light source comprising: a semiconductor laser device configured to emit visible light having a wavelength between 400 nm and 560 nm; and a frequency doubling waveguide, the waveguide optically coupled to the semiconductor laser device to receive the visible light emitted therefrom, the frequency doubling waveguide configured to convert at least a portion of the received light into ultraviolet light having a wavelength between 200 nm and 280 nm, wherein the waveguide comprises: a frequency doubling region including a thin-film single crystal non-linear optical material; a first cladding region disposed on a first surface of the non-linear optical material, the first cladding region comprising material substantially transparent to visible light and to ultraviolet light having a wavelength between 200 nm and 280 nm; an adhesive layer; and a supporting substrate; wherein the first cladding region is disposed between the supporting substrate and the frequency doubling region, and the adhesive layer is disposed between the supporting substrate and the first cladding region; and wherein the first cladding region has an extinction coefficient (k) less than 0.05 at the wavelength of both the visible and ultraviolet light. a semiconductor laser device configured to emit visible light having a wavelength between 400 nm and 560 nm; and a frequency doubling waveguide, the waveguide optically coupled to the semiconductor laser device to receive the visible light emitted therefrom, the frequency doubling waveguide configured to convert at least a portion of the received light into ultraviolet light having a wavelength between 200 nm and 280 nm, wherein the waveguide comprises: a frequency doubling region including a thin-film single crystal non-linear optical material; a first cladding region disposed on a first surface of the non-linear optical material, the first cladding region comprising material substantially transparent to visible light and to ultraviolet light having a wavelength between 200 nm and 280 nm; an adhesive layer; and a supporting substrate; wherein the first cladding region is disposed between the supporting substrate and the frequency doubling region, and the adhesive layer is disposed between the supporting substrate and the first cladding region; and wherein the first cladding region has an extinction coefficient (k) less than 0.05 at the wavelength of both the visible and ultraviolet light. a frequency doubling region including a thin-film single crystal non-linear optical material; a first cladding region disposed on a first surface of the non-linear optical material, the first cladding region comprising material substantially transparent to visible light and to ultraviolet light having a wavelength between 200 nm and 280 nm; an adhesive layer; and a supporting substrate; wherein the first cladding region is disposed between the supporting substrate and the frequency doubling region, and the adhesive layer is disposed between the supporting substrate and the first cladding region; and wherein the first cladding region has an extinction coefficient (k) less than 0.05 at the wavelength of both the visible and ultraviolet light.