An integrated radio frequency, RF, circuit structure, comprising: an active device on a first surface of an isolation layer, the active device having a source region, a drain region, and a body arranged intermediate the source and drain regions; a back-bias metallization on a second surface opposite the first surface of the isolation layer, in which the body of the active device is biased by the back-bias metallization; and a handle substrate on a front-side dielectric layer on the active device, wherein the integrated RF circuit structure further comprises: a first backside dielectric layer on the second surface of the isolation layer; a first portion of the back-bias metallization arranged in the first backside dielectric layer so as to be opposite the body of the active device and spaced a first distance therefrom, the first portion of the back-bias metallization having edge portions; a second backside dielectric layer on the first backside dielectric layer and the first portion of the back-bias metallization, the first portion of the back-bias metallization arranged intermediate the body of the active device and the second backside dielectric layer; and second portions of the back-bias metallization arranged in the second backside dielectric layer, the second portions configured to overlap with the respective edge portions of the first portion of the back-bias metallization, and further configured to be opposite the source and drain regions respectively and spaced a second distance therefrom, the second distance being greater than the first distance. an active device on a first surface of an isolation layer, the active device having a source region, a drain region, and a body arranged intermediate the source and drain regions; a back-bias metallization on a second surface opposite the first surface of the isolation layer, in which the body of the active device is biased by the back-bias metallization; and a handle substrate on a front-side dielectric layer on the active device, wherein the integrated RF circuit structure further comprises: a first backside dielectric layer on the second surface of the isolation layer; a first portion of the back-bias metallization arranged in the first backside dielectric layer so as to be opposite the body of the active device and spaced a first distance therefrom, the first portion of the back-bias metallization having edge portions; a second backside dielectric layer on the first backside dielectric layer and the first portion of the back-bias metallization, the first portion of the back-bias metallization arranged intermediate the body of the active device and the second backside dielectric layer; and second portions of the back-bias metallization arranged in the second backside dielectric layer, the second portions configured to overlap with the respective edge portions of the first portion of the back-bias metallization, and further configured to be opposite the source and drain regions respectively and spaced a second distance therefrom, the second distance being greater than the first distance. a first backside dielectric layer on the second surface of the isolation layer; a first portion of the back-bias metallization arranged in the first backside dielectric layer so as to be opposite the body of the active device and spaced a first distance therefrom, the first portion of the back-bias metallization having edge portions; a second backside dielectric layer on the first backside dielectric layer and the first portion of the back-bias metallization, the first portion of the back-bias metallization arranged intermediate the body of the active device and the second backside dielectric layer; and second portions of the back-bias metallization arranged in the second backside dielectric layer, the second portions configured to overlap with the respective edge portions of the first portion of the back-bias metallization, and further configured to be opposite the source and drain regions respectively and spaced a second distance therefrom, the second distance being greater than the first distance.