mhurhangee/ep-ind-claims huggingface dataset:
A calibration apparatus for assembly of a medical instrument, comprising: a jig body; a camera; an elongated strip which is deflectable and resilient; a lower groove which is disposed in the jig body, and is configured to receive and grasp the camera therein; an upper groove, which is disposed in the jig body above the lower groove, and is configured to receive and grasp the elongated strip therein so as to position the elongated strip above, and in a fixed relation to, the camera, the upper groove being wider than the lower groove; and an alignment element, which is disposed in the jig body, and is configured to align an end of the camera with an end of the elongated strip. a jig body; a camera; an elongated strip which is deflectable and resilient; a lower groove which is disposed in the jig body, and is configured to receive and grasp the camera therein; an upper groove, which is disposed in the jig body above the lower groove, and is configured to receive and grasp the elongated strip therein so as to position the elongated strip above, and in a fixed relation to, the camera, the upper groove being wider than the lower groove; and an alignment element, which is disposed in the jig body, and is configured to align an end of the camera with an end of the elongated strip.
An electroless copper plating bath with a pH of 5 to 10 containing hydrazine or a hydrazine compound as a reducing agent and not containing formaldehyde, the electroless copper plating bath comprising at least: an amine-based complexing agent or an amine compound; and an aminocarboxylic acid-based complexing agent, wherein the amine-based complexing agent is at least one selected from the group consisting of a diamine compound, a triamine compound, or an aromatic amine compound; the amine compound is a monoamine compound; and the aminocarboxylic acid-based complexing agent is at least one selected from the group consisting of nitrilotriacetic acid, diethylene triamine pentaacetic acid, triethylenetetramine hexaacetic acid, 1,3-propanediamine tetraacetic acid, 1,3-diamino-2-hydroxypropane tetraacetic acid, hydroxyethylimino diacetic acid, dihydroxyethyl glycine, glycol ether diamino tetraacetic acid, dicarboxymethyl glutamic acid and ethylenediamine-N,N'-disuccinic acid, and wherein said bath further comprises a carboxylic acid-based complexing agent. an amine-based complexing agent or an amine compound; and an aminocarboxylic acid-based complexing agent, the amine-based complexing agent is at least one selected from the group consisting of a diamine compound, a triamine compound, or an aromatic amine compound; the amine compound is a monoamine compound; and the aminocarboxylic acid-based complexing agent is at least one selected from the group consisting of nitrilotriacetic acid, diethylene triamine pentaacetic acid, triethylenetetramine hexaacetic acid, 1,3-propanediamine tetraacetic acid, 1,3-diamino-2-hydroxypropane tetraacetic acid, hydroxyethylimino diacetic acid, dihydroxyethyl glycine, glycol ether diamino tetraacetic acid, dicarboxymethyl glutamic acid and ethylenediamine-N,N'-disuccinic acid,
A device for forming and/or maintaining a percutaneous access pathway into a body of a patient, comprising: an access pathway configured to connect an internal portion of a body of a patient to an external environment; the access pathway comprising an access pathway port and an access pathway catheter; the access pathway port having an open position and a closed position, the access pathway port being configured to maintain a non-pierceable barrier between the internal portion of the body and the external environment when in a closed position, the access pathway port including a lock to securely maintain access pathway port closure when the access pathway port is closed and a distal opening through which the access pathway catheter is configured to extend into the internal portion of the body; an attachment device connectable to the access pathway port and configured to open the access pathway port; and, an internally sterile attachment device sheath at least partially surrounding an internal equipment component (170; 602; 700) of the attachment device, the attachment device sheath configured to enable insertion of at least part of the internal equipment component into the internal portion of the body through the access pathway when the attachment device is connected to the access pathway port. an access pathway configured to connect an internal portion of a body of a patient to an external environment; the access pathway comprising an access pathway port and an access pathway catheter; the access pathway port having an open position and a closed position, the access pathway port being configured to maintain a non-pierceable barrier between the internal portion of the body and the external environment when in a closed position, the access pathway port including a lock to securely maintain access pathway port closure when the access pathway port is closed and a distal opening through which the access pathway catheter is configured to extend into the internal portion of the body; an attachment device connectable to the access pathway port and configured to open the access pathway port; and, an internally sterile attachment device sheath at least partially surrounding an internal equipment component (170; 602; 700) of the attachment device, the attachment device sheath configured to enable insertion of at least part of the internal equipment component into the internal portion of the body through the access pathway when the attachment device is connected to the access pathway port.
A process for producing glass fibers from raw glass batch, in a refractory lined glass melter, the process comprising the steps of: charging raw glass batch to the melting zone of the glass melter, the glass batch comprising: 61 to 68 weight percent SiO 2; 15 to 19 weight percent Al 2 O 3; 15 to 20 weight percent RO, where RO equals the sum of MgO, CaO, SrO and BaO in the batch composition; and 0 to 3 weight percent alkali metal oxides; wherein the glass batch includes CaO and MgO; heating the glass batch to a forming temperature in excess of the liquidus temperature of a resulting glass to form a fiberizable molten glass; and fiberizing said molten glass at a forming temperature of less than 1454.44 °C (2650° F). charging raw glass batch to the melting zone of the glass melter, the glass batch comprising: 61 to 68 weight percent SiO 2; 15 to 19 weight percent Al 2 O 3; 15 to 20 weight percent RO, where RO equals the sum of MgO, CaO, SrO and BaO in the batch composition; and 0 to 3 weight percent alkali metal oxides; wherein the glass batch includes CaO and MgO; 61 to 68 weight percent SiO 2; 15 to 19 weight percent Al 2 O 3; 15 to 20 weight percent RO, where RO equals the sum of MgO, CaO, SrO and BaO in the batch composition; and 0 to 3 weight percent alkali metal oxides; heating the glass batch to a forming temperature in excess of the liquidus temperature of a resulting glass to form a fiberizable molten glass; and fiberizing said molten glass at a forming temperature of less than 1454.44 °C (2650° F).
A method for testing blood and/or a blood product, or a vaccine and/or an intermediate in vaccine manufacture for the presence or absence of a first virus comprising the steps of: (a) taking a sample of the blood and/or blood product, or vaccine and/or an intermediate in vaccine manufacture; (b) adding an exogenous second virus to the sample; and (c) analysing the nucleic acids from the sample to detect the presence or absence of the first and second viruses; wherein the first and second virus are the same type of virus, wherein the first and second viruses are: (i) both enveloped viruses or non-enveloped viruses; and (ii) both filamentous viruses, icosahedral viruses, or complex viruses; and the first virus is an animal virus and the second virus is a plant virus. (a) taking a sample of the blood and/or blood product, or vaccine and/or an intermediate in vaccine manufacture; (b) adding an exogenous second virus to the sample; and (c) analysing the nucleic acids from the sample to detect the presence or absence of the first and second viruses; (i) both enveloped viruses or non-enveloped viruses; and (ii) both filamentous viruses, icosahedral viruses, or complex viruses;
An antenna-integrated module comprising: one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters. one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters.
A method of providing a near-surface cooling microchannel having a width and depth, parallel and normal to the first surface 36, respectively, of up to 2.5mm in a component, the component comprising an internal cooling passage within a base article having an opening at an outer surface, the method comprising: forming a near-surface cooling microchannel in a first surface of a pre-sintered preform, wherein the pre-sintered preform comprises a mixture comprising a base alloy and a second alloy, the base alloy having a composition similar to the base article and having a melting point of within 25°C of the melting temperature of the base article, the second alloy having a composition similar to the base article but further comprising a melting point depressant comprising one of boron, silicon or a combination thereof, wherein the base alloy comprises 30 weight percent to 90 weight percent of the mixture and the second alloy comprising a sufficient amount of the melting point depressant to have a lower melting temperature than the base alloy and to enable bonding of the pre-sintered preform to the base article at temperatures below the melting point of the base article; disposing the first surface of the pre-sintered preform onto the outer surface of the base article such that the opening of the outer surface of the base article is aligned with the near-surface cooling microchannel in the first surface of the pre-sintered preform; and, heating the pre-sintered preform to bond it to the base article, wherein the opening of the outer surface of the base article remains aligned with the near-surface cooling microchannel in the first surface of the pre-sintered preform. forming a near-surface cooling microchannel in a first surface of a pre-sintered preform, wherein the pre-sintered preform comprises a mixture comprising a base alloy and a second alloy, the base alloy having a composition similar to the base article and having a melting point of within 25°C of the melting temperature of the base article, the second alloy having a composition similar to the base article but further comprising a melting point depressant comprising one of boron, silicon or a combination thereof, wherein the base alloy comprises 30 weight percent to 90 weight percent of the mixture and the second alloy comprising a sufficient amount of the melting point depressant to have a lower melting temperature than the base alloy and to enable bonding of the pre-sintered preform to the base article at temperatures below the melting point of the base article; disposing the first surface of the pre-sintered preform onto the outer surface of the base article such that the opening of the outer surface of the base article is aligned with the near-surface cooling microchannel in the first surface of the pre-sintered preform; and, heating the pre-sintered preform to bond it to the base article, wherein the opening of the outer surface of the base article remains aligned with the near-surface cooling microchannel in the first surface of the pre-sintered preform.
A bio-absorbable scaffold strut structure for implantation into the body, said strut structure being formed from a crystallizable bio-absorbable polymer composition, comprising a base polymer of poly (L-lactide) moiety and/or poly (D-lactide) moiety, or copolymers thereof, characterized in that said composition comprises a further base polymer, comprising poly (L-lactide) moiety and/or a poly (D-lactide) moiety that is admixed and/or linked with a modifying copolymer thereof, selected from a group of poly (L-lactide)-co-Tri-Methylene-Carbonate, poly (D-lactide)-co-Tri-Methylene-Carbonate, poly (L-lactide)-co-ε-caprolactone and/or poly (D-lactide)-co-ε-caprolactone.
Electrical switching arrangement comprising: - an electrical switching section with electrical arc of an elongated conductor, a portion of the main axis of said longitudinal conductor being surrounded by at least one enclosure coupled to at least one outlet valve of a cooling channel outside the enclosure, said valve opening under a pressure equilibrium between the enclosure and said cooling channel, - a hot gas pressure outlet from the switching section to an internal volume of the enclosure, - at least one internal wall is made available in the enclosure, said internal wall forms a limited space (VC, VD) for storing hot gas in the internal volume of the enclosure, said storage space forming a permanent means of pressure shielding arranged at least opposite the valve, characterised in that - the internal wall mainly separates the enclosure into two lower and upper cavities (CI, CS) coaxial to the axis of the electrical switching section, the lower cavity is coaxially the nearest to the main axis of the electrical switching section and the upper cavity is in the inner periphery of the enclosure. - an electrical switching section with electrical arc of an elongated conductor, a portion of the main axis of said longitudinal conductor being surrounded by at least one enclosure coupled to at least one outlet valve of a cooling channel outside the enclosure, said valve opening under a pressure equilibrium between the enclosure and said cooling channel, - a hot gas pressure outlet from the switching section to an internal volume of the enclosure, - at least one internal wall is made available in the enclosure, - the internal wall mainly separates the enclosure into two lower and upper cavities (CI, CS) coaxial to the axis of the electrical switching section,
Anti-corrosion tape comprising at least four plies, wherein at least two plies of the anti-corrosion tape comprise as carrier plies a carrier that has at least one layer, wherein at least one layer of the carrier is configured as a carrying layer, wherein at least one further ply of the anti-corrosion tape is configured as a connecting ply and comprises at least one connecting layer, wherein the connecting layer comprises a material that comprises at least one butyl rubber and/or at least one polyisobutylene, wherein the at least one connecting ply is disposed between the two carrier plies, and wherein at least one further ply of the anti-corrosion tape is configured as an anti-corrosion ply and is disposed on at least one exposed surface of at least one carrier ply, wherein an adhesion-promoting layer is disposed on at least one surface of the carrying layer of at least one of the carrier plies, wherein the carrying layers of the at least two carrier plies are formed from a carrier material that comprises at least one polyethylene, one polypropylene, one polyvinyl chloride, one thermoplastic elastomer and/or one metal.
An improved method for chemical looping combustion of at least one liquid hydrocarbon feed, comprising: - atomizing the liquid feed with an atomization gas so as to feed it into a metal oxide transport zone, upstream from combustion zone, through atomization means allowing to form finely dispersed liquid droplets in the atomization gas; - spraying the liquid feed in form of droplets into contact with at least part of the metal oxides in transport zone, the operating conditions in transport zone being so selected that the superficial gas velocity after spraying the liquid feed is higher than the transport velocity of the metal oxide particles; - sending all of the effluents from transport zone to a combustion zone allowing reduction of the metal oxides, said combustion zone comprising at least one dense-phase fluidized bed. - atomizing the liquid feed with an atomization gas so as to feed it into a metal oxide transport zone, upstream from combustion zone, through atomization means allowing to form finely dispersed liquid droplets in the atomization gas; - spraying the liquid feed in form of droplets into contact with at least part of the metal oxides in transport zone, the operating conditions in transport zone being so selected that the superficial gas velocity after spraying the liquid feed is higher than the transport velocity of the metal oxide particles; - sending all of the effluents from transport zone to a combustion zone allowing reduction of the metal oxides, said combustion zone comprising at least one dense-phase fluidized bed.
An apparatus comprising: a number of sensors configured to detect a number of parameters in a pneumatic system; an energy harvesting unit configured to generate electrical energy from a compressed gas in the pneumatic system; a battery system configured to store the electrical energy; and a controller connected to the number of sensors and the energy harvesting unit, wherein the controller is configured to process measurements for the number of parameters detected by the number of sensors and control operation of the energy harvesting unit; and wherein: the number of sensors and the controller are powered by the electrical energy generated by the energy harvesting unit; and the controller is configured to control charging of the battery system using a policy configured to cause the controller to charge and discharge the battery system using a number of charge and discharge curves for the battery system in the policy to charge and discharge, respectively, the battery system in a manner to improve performance and/or longevity of the battery system. a number of sensors configured to detect a number of parameters in a pneumatic system; an energy harvesting unit configured to generate electrical energy from a compressed gas in the pneumatic system; a battery system configured to store the electrical energy; and a controller connected to the number of sensors and the energy harvesting unit, wherein the controller is configured to process measurements for the number of parameters detected by the number of sensors and control operation of the energy harvesting unit; the number of sensors and the controller are powered by the electrical energy generated by the energy harvesting unit; and the controller is configured to control charging of the battery system using a policy configured to cause the controller to charge and discharge the battery system using a number of charge and discharge curves for the battery system in the policy to charge and discharge, respectively, the battery system in a manner to improve performance and/or longevity of the battery system.
A three-dimensional memory device, comprising: a substrate; a first memory deck comprising a first plurality of interleaved conductor layers and dielectric layers above the substrate; a first channel structure extending vertically through the first memory deck and comprising: a first memory film and a first semiconductor channel along a sidewall of the first channel structure; and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel, wherein a lateral surface of the inter-deck plug is without protrusions thereon; a second memory deck comprising a second plurality of interleaved conductor layers and dielectric layers above the first memory deck; and a second channel structure extending vertically through the second memory deck and comprising a second memory film and a second semiconductor channel along a sidewall of the second channel structure, wherein the second semiconductor channel is in contact with the inter-deck plug (118, 212); characterised in that a top surface of the inter-deck plug is flush with an upper end of the first semiconductor channel, and wherein the top surface of the inter-deck plug is below an upper end of the first memory film. a substrate; a first memory deck comprising a first plurality of interleaved conductor layers and dielectric layers above the substrate; a first channel structure extending vertically through the first memory deck and comprising: a first memory film and a first semiconductor channel along a sidewall of the first channel structure; and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel, wherein a lateral surface of the inter-deck plug is without protrusions thereon; a first memory film and a first semiconductor channel along a sidewall of the first channel structure; and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel, wherein a lateral surface of the inter-deck plug is without protrusions thereon; a second memory deck comprising a second plurality of interleaved conductor layers and dielectric layers above the first memory deck; and a second channel structure extending vertically through the second memory deck and comprising a second memory film and a second semiconductor channel along a sidewall of the second channel structure, wherein the second semiconductor channel is in contact with the inter-deck plug (118, 212); characterised in that a top surface of the inter-deck plug is flush with an upper end of the first semiconductor channel, and wherein the top surface of the inter-deck plug is below an upper end of the first memory film.