A method of manufacturing a semiconductor chip having an electrode pad electrically coupled to a semiconductor element formed on a semiconductor substrate and a through via electrically coupled to the electrode pad, comprising: a first resist film forming step of forming a first resist film having a first opening portion on the electrode pad; a metal film forming step of forming a metal film so as to cover the first opening portion and the first resist film; a second resist film forming step of forming a second resist film on the metal film, and the second resist film having a second opening portion having a diameter smaller than the first opening portion so as to expose the metal film; a through hole forming step of forming a through hole which penetrates the metal film, the electrode pad and the semiconductor substrate corresponding to a position where the second opening portion is formed and has a diameter smaller than a diameter of the first opening portion; a step of removing said second resist film; and then an insulation film removing tape pasting step of pasting an insulation film removing tape on the metal film so as to cover the upper end portions of the opening portion; an insulation film forming step of forming an insulation film on the insulation film removing tape from the second major surface side of the semiconductor substrate to cover a side wall of the through hole and the first opening portion; and an insulation film removing tape removing step of removing the insulation film removing tape; a through via forming step of forming the through via at the through hole and the first opening portion, the through via having a protrusion portion protruding from the first opening portion and having a width larger than a width of the first opening portion; and a conductive member forming step of forming a conductive member which contacts to the protrusion portion and the electrode pad by removing the metal film not covered by the protrusion portion. a first resist film forming step of forming a first resist film having a first opening portion on the electrode pad; a metal film forming step of forming a metal film so as to cover the first opening portion and the first resist film; a second resist film forming step of forming a second resist film on the metal film, and the second resist film having a second opening portion having a diameter smaller than the first opening portion so as to expose the metal film; a through hole forming step of forming a through hole which penetrates the metal film, the electrode pad and the semiconductor substrate corresponding to a position where the second opening portion is formed and has a diameter smaller than a diameter of the first opening portion; a step of removing said second resist film; and then an insulation film removing tape pasting step of pasting an insulation film removing tape on the metal film so as to cover the upper end portions of the opening portion; an insulation film forming step of forming an insulation film on the insulation film removing tape from the second major surface side of the semiconductor substrate to cover a side wall of the through hole and the first opening portion; and an insulation film removing tape removing step of removing the insulation film removing tape;