A pattern structure inspection apparatus (100; 200) comprising: a wave source for irradiating a wave onto a sample comprising a pattern region in which a structure having a certain pattern is provided on a substrate; a data collector configured to collect speckle data generated due to multiple scattering of the irradiated wave by the sample; a data analyzer configured to receive and analyze the speckle data collected by the data collector, and configured to output an analysis result on a display; and a multiple scattering amplifier for amplifying a number of times that the wave is multiple-scattered in the sample, by reflecting at least some waves multiple-scattered and emitted from the sample, back to the sample, wherein the data collector collects the speckle data in an area between the sample and the data collector or in an internal area of the data collector, wherein the multiple scattering amplifier comprises: a first multiple scattering amplifier located on an extension line passing through a center of the sample, to reflect at least some waves multiple-scattered and emitted from the sample S, back to the sample; the pattern structure inspection apparatus being characterized by a second multiple scattering amplifier located at an opposite side of the first multiple scattering amplifier with respect to the sample, to reflect at least some waves multiple-scattered and emitted from the sample, back to the sample. a wave source for irradiating a wave onto a sample comprising a pattern region in which a structure having a certain pattern is provided on a substrate; a data collector configured to collect speckle data generated due to multiple scattering of the irradiated wave by the sample; a data analyzer configured to receive and analyze the speckle data collected by the data collector, and configured to output an analysis result on a display; and a multiple scattering amplifier for amplifying a number of times that the wave is multiple-scattered in the sample, by reflecting at least some waves multiple-scattered and emitted from the sample, back to the sample, wherein the data collector collects the speckle data in an area between the sample and the data collector or in an internal area of the data collector, wherein the multiple scattering amplifier comprises: a first multiple scattering amplifier located on an extension line passing through a center of the sample, to reflect at least some waves multiple-scattered and emitted from the sample S, back to the sample; the pattern structure inspection apparatus being characterized by a second multiple scattering amplifier located at an opposite side of the first multiple scattering amplifier with respect to the sample, to reflect at least some waves multiple-scattered and emitted from the sample, back to the sample. a first multiple scattering amplifier located on an extension line passing through a center of the sample, to reflect at least some waves multiple-scattered and emitted from the sample S, back to the sample; the pattern structure inspection apparatus being characterized by a second multiple scattering amplifier located at an opposite side of the first multiple scattering amplifier with respect to the sample, to reflect at least some waves multiple-scattered and emitted from the sample, back to the sample.