A method of fabricating semiconductor light emitting device, comprising: forming a laminated film by laminating an n-type nitride semiconductor layer, an active layer comprising a multiple quantum well structure of nitride semiconductors and a p-type nitride semiconductor layer in order on an uneven main surface of a first substrate; forming a plurality of first electrodes corresponding to a plurality of light emitting devices, respectively, on an upper surface of the p-type nitride semiconductor layer; forming a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer; patterning the laminated film to separate structures corresponding to the plurality of light emitting devices wherein each separated structure has a tapered shape so that an area of the laminated film continuously decreases from the n-type nitride semiconductor layer to the p-type nitride semiconductor layer and forming a second metal layer on an upper surface of a second substrate, the second metal layer being made of a material comprising a melting point lower than the melting point of the first metal layer; joining the first and second metal layers by facing the first and second substrates; cutting the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, the light emitting element being disposed in a reverse-tapered shape from a direction of the second substrate; irradiating a laser toward areas of the light emitting elements from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate; and forming a second electrode on at least a portion of a surface exposed by peeling off the laminated film. forming a laminated film by laminating an n-type nitride semiconductor layer, an active layer comprising a multiple quantum well structure of nitride semiconductors and a p-type nitride semiconductor layer in order on an uneven main surface of a first substrate; forming a plurality of first electrodes corresponding to a plurality of light emitting devices, respectively, on an upper surface of the p-type nitride semiconductor layer; forming a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer; patterning the laminated film to separate structures corresponding to the plurality of light emitting devices wherein each separated structure has a tapered shape so that an area of the laminated film continuously decreases from the n-type nitride semiconductor layer to the p-type nitride semiconductor layer and forming a second metal layer on an upper surface of a second substrate, the second metal layer being made of a material comprising a melting point lower than the melting point of the first metal layer; joining the first and second metal layers by facing the first and second substrates; cutting the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, the light emitting element being disposed in a reverse-tapered shape from a direction of the second substrate; irradiating a laser toward areas of the light emitting elements from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate; and forming a second electrode on at least a portion of a surface exposed by peeling off the laminated film.