mhurhangee/ep-ind-claims huggingface dataset:
A method for operating an internal combustion engine that is located in an engine room, characterized in that concentration of an exhaust gas component in the intake air is monitored from the air of the engine room and when the concentration of the exhaust gas component exceeds a predetermined limit value, water injection into the intake duct or into the cylinders of the engine is terminated.
One or more computer-readable media comprising instructions to, upon execution of the instructions by one or more processors of a user equipment, UE, cause the UE to: decode, upon reception of a message from an access node, AN, an information element, IE, that authorizes the UE (104, 105) with an option to measure only one synchronization signal block, SSB, corresponding to one cell, if a plurality of SSBs corresponding to the one cell are transmitted to the UE (104, 105) in a plurality of bandwidth parts, BWPs; decode, upon reception, a plurality of BWP-downlink IEs that configure the respective BWPs, wherein the BWP-downlink IEs of those BWPs on which the plurality of SSBs are transmitted include a measurement object, MO, identifications, IDs; and determine that the plurality of SSBs transmitted to the UE (104, 105) in the respective BWPs correspond to the one cell based on the MO IDs included in the plurality of BWP-downlink IEs; measure one SSB of a BWP among the plurality of SSBs of respective BWPs for which the BWP-downlink IE includes a MO ID. decode, upon reception of a message from an access node, AN, an information element, IE, that authorizes the UE (104, 105) with an option to measure only one synchronization signal block, SSB, corresponding to one cell, if a plurality of SSBs corresponding to the one cell are transmitted to the UE (104, 105) in a plurality of bandwidth parts, BWPs; decode, upon reception, a plurality of BWP-downlink IEs that configure the respective BWPs, wherein the BWP-downlink IEs of those BWPs on which the plurality of SSBs are transmitted include a measurement object, MO, identifications, IDs; and determine that the plurality of SSBs transmitted to the UE (104, 105) in the respective BWPs correspond to the one cell based on the MO IDs included in the plurality of BWP-downlink IEs; measure one SSB of a BWP among the plurality of SSBs of respective BWPs for which the BWP-downlink IE includes a MO ID.
A method of isolating cells comprising: providing a microfluidic device having at least one microfluidic channel coupled to an inlet and an outlet, the at least one microfluidic channel comprising at least one expansion region disposed along the length thereof, the at least one expansion region comprising an abrupt increase in a cross-sectional dimension of the at least one microfluidic channel configured to generate a vortex within the at least one expansion region in response to fluid flow; pumping a solution comprising one of blood, urine, pleural fluid, and a peritoneal wash containing a population of cells into the inlet with a pump or pressure driven pumping system; trapping at least some of the cells within the vortex created within the at least one expansion region, the at least some of the cells having diameters ≥ 10 μm; and controlling the pump or pressure driven pumping system to reduce the flow rate of solution through the at least one microfluidic channel and release the trapped cells from the plurality of expansion regions. providing a microfluidic device having at least one microfluidic channel coupled to an inlet and an outlet, the at least one microfluidic channel comprising at least one expansion region disposed along the length thereof, the at least one expansion region comprising an abrupt increase in a cross-sectional dimension of the at least one microfluidic channel configured to generate a vortex within the at least one expansion region in response to fluid flow; pumping a solution comprising one of blood, urine, pleural fluid, and a peritoneal wash containing a population of cells into the inlet with a pump or pressure driven pumping system; trapping at least some of the cells within the vortex created within the at least one expansion region, the at least some of the cells having diameters ≥ 10 μm; and controlling the pump or pressure driven pumping system to reduce the flow rate of solution through the at least one microfluidic channel and release the trapped cells from the plurality of expansion regions.
Mobile radio device for being carried by a road user, having a position determination module and a transmission module which is configured to transmit the current position of the mobile radio device (4, 5, 6) to a server, wherein the mobile radio device (4, 5, 6) is configured to generate situation-based sensor data, to create said data to classify the road user according to the type of movement (1, 2, 3) thereof, and to include the classification when determining data to be transmitted to the server, characterized in that the mobile radio device (4, 5, 6) has an inertial navigation system which is configured to generate classification-based acceleration data, wherein the sensor data comprise acceleration data which are based on an axis arranged perpendicular to the road, are generated by means of the inertial navigation system and are used to classify the road user as a pedestrian when acceleration patterns, which are typical of a pedestrian and, in contrast to a vehicle, are periodically recurrent strong acceleration signal patterns, are present, wherein, in order to create the classification, an application is implemented in the mobile radio device (4, 5, 6), the program instructions of which application are configured to access the sensor data and other data stored in the mobile radio device (4, 5, 6), wherein the mobile radio device (4, 5, 6) is configured to transmit the classification to the server.
Electric machine comprising a rotor and a stator, wherein the rotor has magnet pockets for accommodating permanent magnets (55, 56, 85, 86), wherein the magnet pockets comprise at least a first pair of magnet pockets (50, 51) and a second pair of magnet pockets (80, 11), wherein the second pair (80, 81) is arranged radially further towards the inside than the first pair (50, 51), as seen with respect to a rotor axis, wherein the magnet pockets of the respective pair of magnet pockets (50, 51, 80, 81) are arranged symmetrically in relation to one another, as seen with respect to an axis of symmetry, wherein the axis of symmetry runs in the radial direction and through the centre point of the rotor, wherein the magnet pockets of the respective pair of magnet pockets (50, 51, 80, 81) are arranged such that a distance between the respective magnet pocket and the axis of symmetry increases as the distance to the circumferential periphery of the rotor decreases, wherein the magnet pockets of the first pair (50, 51) are arranged at a first mechanical angle in relation to one another, and wherein the magnet pockets of the second pair (80, 81) are arranged at a second mechanical angle in relation to one another, wherein the second angle ranges from approximately 65° to approximately 112°, in particular ranges from approximately 88° to approximately 112°, characterized in that - the first angle ranges from approximately 120° to approximately 140°, in that - the magnet pockets of the first pair (50, 51) are arranged such that the electrical pole-pitch angle of the first pair of magnet pockets (50, 51) is approximately 59.5° to approximately 80.0°, in particular approximately 59.5° to approximately 72.0°, and in that - the magnet pockets of the second pair (80, 81) are arranged such that the electrical pole-pitch angle of the second pair (80, 81) of magnet pockets is approximately 110.0° to approximately 122,0°, in particular approximately 110.0° to approximately 116.7°, and more particularly approximately 110.0° to approximately 116.5°. - the first angle ranges from approximately 120° to approximately 140°, in that - the magnet pockets of the first pair (50, 51) are arranged such that the electrical pole-pitch angle of the first pair of magnet pockets (50, 51) is approximately 59.5° to approximately 80.0°, in particular approximately 59.5° to approximately 72.0°, and in that - the magnet pockets of the second pair (80, 81) are arranged such that the electrical pole-pitch angle of the second pair (80, 81) of magnet pockets is approximately 110.0° to approximately 122,0°, in particular approximately 110.0° to approximately 116.7°, and more particularly approximately 110.0° to approximately 116.5°.
A knitting method for forming weft knitted fabric having a thick portion, the knitting method comprising a thick portion knitting step of forming at least two complete thick portion textures in a direction parallel to a course of the weft knitted fabric in which one complete thick portion texture is obtained by repeating a thick portion knitting substep n times, where n is an integer equal to or larger than 5, while alternating yarn feeding directions to form n-partial courses, the thick portion knitting substep including feeding a knitting yarn once to at least n adjacent knitting needles of a needle row in one direction in which the needle row is arranged or in another direction, wherein: the thick portion knitting substep performs knit stitch formation and tuck stitch formation each on at least one of the n knitting needles and performs miss stitch formation on at least n - 3 or more of the n knitting needles; in forming one complete thick portion texture, by repeating the thick portion knitting substeps (S102, S103, S104, S105, S106), knit stitch formation and tuck stitch formation are performed at least once on each of the n knitting needles to form double loops and performs miss stitch formation n - 3 or more times on each of the n knitting needles; and the thick portion knitting step includes: (i) knitting a first of the at least two complete thick portion textures; (ii) after knitting the first of the at least two complete thick portion textures, knitting a plain-knitting portion by feeding the knitting yarn in one direction to other knitting needles than those used to knit the at least two complete thick portion textures; and (iii) after knitting the plain-knitting portion, knitting a second of the at least two complete thick portion textures. the thick portion knitting substep performs knit stitch formation and tuck stitch formation each on at least one of the n knitting needles and performs miss stitch formation on at least n - 3 or more of the n knitting needles; in forming one complete thick portion texture, by repeating the thick portion knitting substeps (S102, S103, S104, S105, S106), knit stitch formation and tuck stitch formation are performed at least once on each of the n knitting needles to form double loops and performs miss stitch formation n - 3 or more times on each of the n knitting needles; and the thick portion knitting step includes: (i) knitting a first of the at least two complete thick portion textures; (ii) after knitting the first of the at least two complete thick portion textures, knitting a plain-knitting portion by feeding the knitting yarn in one direction to other knitting needles than those used to knit the at least two complete thick portion textures; and (iii) after knitting the plain-knitting portion, knitting a second of the at least two complete thick portion textures.
A firearm support device comprising: a base structure; a carriage movably coupled to the base structure, wherein movement of the carriage is restricted with respect to the base structure to a single axis of direction; and characterized by an attachment feature (200, 402, 502) coupled to the carriage, the attachment feature (200, 402, 502) configured to mount a barrel of a firearm to the carriage and to position the barrel of the firearm in an initial position, wherein the carriage is slidably coupled to the base structure; a striker assembly for trigging a projectile loaded into the barrel of the firearm, the striker assembly comprising a firing pin and a triggering element, the triggering element located proximate to the firing pin and configured to displace the firing pin into contact with a projectile loaded in the barrel of the firearm; and a shock absorber coupled to the carriage and configured to reset the firearm support device by returning the barrel of the firearm to substantially the same initial position after firing the projectile. a base structure; a carriage movably coupled to the base structure, wherein movement of the carriage is restricted with respect to the base structure to a single axis of direction; and characterized by an attachment feature (200, 402, 502) coupled to the carriage, the attachment feature (200, 402, 502) configured to mount a barrel of a firearm to the carriage and to position the barrel of the firearm in an initial position, wherein the carriage is slidably coupled to the base structure; a striker assembly for trigging a projectile loaded into the barrel of the firearm, the striker assembly comprising a firing pin and a triggering element, the triggering element located proximate to the firing pin and configured to displace the firing pin into contact with a projectile loaded in the barrel of the firearm; and a shock absorber coupled to the carriage and configured to reset the firearm support device by returning the barrel of the firearm to substantially the same initial position after firing the projectile.
A corneal epithelium forming cell sheet which is characterized by being in contact with an annular carrier that keeps the cell sheet from shrinking, which annular carrier is selected from a polymer membrane, a structure molded from a polymer membrane or a metallic fixture, wherein, when a polymer is used, it is selected from the group consisting of polyvinylidene difluoride, polypropylene, polyethylene, celluloses, cellulose derivatives, papers, chitin, chitosan, collagen, or urethane;, which cell sheet in contact with an annular carrier is obtainable by detaching from a culture support surface after contacting the cell sheet on the culture support surface with said annular carrier.
A flux, wherein the flux comprises: at least one selected from 0.3 to 2.0 mass% of an organochlorine compound, and more than 0.04 mass% and 1.00 mass% or less of an amine hydrochloride; and characterized in that the flux further comprises 0.2 to 1.5 mass% of an organophosphorus compound that is at least one selected from a phosphonic acid ester and a phenyl-substituted phosphinic acid, each based on the whole flux. at least one selected from 0.3 to 2.0 mass% of an organochlorine compound, and more than 0.04 mass% and 1.00 mass% or less of an amine hydrochloride; and characterized in that the flux further comprises 0.2 to 1.5 mass% of an organophosphorus compound that is at least one selected from a phosphonic acid ester and a phenyl-substituted phosphinic acid, each based on the whole flux.
A particulate material for powder bed fusion, wherein the particulate material comprises, based on the total weight of the particulate material, 98 to 100 weight percent of a semicrystalline thermoplastic selected from the group consisting of semicrystalline polycarbonates and semicrystalline polyetherimides; wherein the particulate material comprises particles characterized by a volume-based distribution of equivalent spherical diameters determined by laser diffraction according to ISO 13320:2009, and the distribution exhibits a Dv50 value in a range of 35 to 85 micrometers, wherein Dv50 is defined as the median equivalent spherical diameter, a Dv01 value greater than 2 micrometers, wherein Dv01 is defined as the equivalent spherical diameter corresponding to 1 percent of the cumulative undersize distribution, a Dv99 value less than 115 micrometers, wherein Dv99 is defined as the equivalent spherical diameter corresponding to 99 percent of the cumulative undersize distribution. wherein the particulate material comprises, based on the total weight of the particulate material, 98 to 100 weight percent of a semicrystalline thermoplastic selected from the group consisting of semicrystalline polycarbonates and semicrystalline polyetherimides; wherein the particulate material comprises particles characterized by a volume-based distribution of equivalent spherical diameters determined by laser diffraction according to ISO 13320:2009, and the distribution exhibits a Dv50 value in a range of 35 to 85 micrometers, wherein Dv50 is defined as the median equivalent spherical diameter, a Dv01 value greater than 2 micrometers, wherein Dv01 is defined as the equivalent spherical diameter corresponding to 1 percent of the cumulative undersize distribution, a Dv99 value less than 115 micrometers, wherein Dv99 is defined as the equivalent spherical diameter corresponding to 99 percent of the cumulative undersize distribution. a Dv50 value in a range of 35 to 85 micrometers, wherein Dv50 is defined as the median equivalent spherical diameter, a Dv01 value greater than 2 micrometers, wherein Dv01 is defined as the equivalent spherical diameter corresponding to 1 percent of the cumulative undersize distribution, a Dv99 value less than 115 micrometers, wherein Dv99 is defined as the equivalent spherical diameter corresponding to 99 percent of the cumulative undersize distribution.
An exhaust-gas flap, in particular for the exhaust-gas flow of an internal combustion engine, comprising a flap pipe, a flap plate that is supported, in the interior of the flap pipe, on a pivot shaft that is rotatable about a pivot axis, and a pivoting drive for the pivot shaft with a drive element, furthermore comprising a coupling arrangement which couples the drive element to the pivot shaft for conjoint rotation about the pivot axis, wherein the coupling arrangement comprises a coupling element with a first coupling region, which is coupled or provided for coupling to the drive element, with a second coupling region, which is coupled or provided for coupling to the pivot shaft, and with at least one connecting region (48, 50), which connects the first coupling region to the second coupling region, wherein vibration-damping material (64; 64'; 64") is arranged in the region of the coupling arrangement, characterized in that, the two coupling regions (38, 42) and the at least one connecting region (48, 50) surround a coupling element interior space, and that at least a part of the vibration-damping material (64") is arranged in the coupling element interior space, and/or in that a second heat shield element is provided on a side of the second coupling region facing toward the pivot shaft, and that at least a part of the vibration-damping material (64; 64') is provided in the region of the second heat shield element. the two coupling regions (38, 42) and the at least one connecting region (48, 50) surround a coupling element interior space, and that at least a part of the vibration-damping material (64") is arranged in the coupling element interior space, and/or in that a second heat shield element is provided on a side of the second coupling region facing toward the pivot shaft, and that at least a part of the vibration-damping material (64; 64') is provided in the region of the second heat shield element.
A semiconductor structure, comprising: a first plurality of semiconductor fins and a second plurality of semiconductor fins (11 1) above a substrate; an isolation layer on the substrate surrounding respective lower portions of each of the semiconductor fins (110. 111) of the first and second plurality of semiconductor fins; a non-planar resistor structure formed on the isolation layer and over the second plurality of semiconductor fins but not over the first plurality of semiconductor fins, a non- planar transistor structure including a gate stack comprising a metal gate and a high- k gate dielectric, the gate stack formed on the isolation layer and over the first plurality of semiconductor fins but not over the second plurality of semiconductor fins; and wherein the non-planar resistor structure comprises a non-planar resistive semiconductor material layer formed conformal with the second plurality of semiconductor fins; an electrically insulating layer between the non-planar resistive semiconductor material layer and the second plurality of semiconductor fins; wherein the metal gate over the top surfaces of the first plurality of semiconductor fins is thicker than the non-planar resistive semiconductor material layer over the top surfaces of the second plurality of semiconductor fins. a first plurality of semiconductor fins and a second plurality of semiconductor fins (11 1) above a substrate; an isolation layer on the substrate surrounding respective lower portions of each of the semiconductor fins (110. 111) of the first and second plurality of semiconductor fins; a non-planar resistor structure formed on the isolation layer and over the second plurality of semiconductor fins but not over the first plurality of semiconductor fins, a non- planar transistor structure including a gate stack comprising a metal gate and a high- k gate dielectric, the gate stack formed on the isolation layer and over the first plurality of semiconductor fins but not over the second plurality of semiconductor fins; and wherein the non-planar resistor structure comprises a non-planar resistive semiconductor material layer formed conformal with the second plurality of semiconductor fins; an electrically insulating layer between the non-planar resistive semiconductor material layer and the second plurality of semiconductor fins; wherein the metal gate over the top surfaces of the first plurality of semiconductor fins is thicker than the non-planar resistive semiconductor material layer over the top surfaces of the second plurality of semiconductor fins.