A non-volatile storage system, comprising: a non-volatile storage element; a control line in communication with the non-volatile storage element; a current comparison circuit in communication with the control line, the current comparison circuit configured to compare a current indicative of current in the control line with a reference (I REFDET) and to provide an output based on the comparing; a decision logic circuit in communication with the output of the current comparison circuit, the decision logic circuit configured to determine whether the output indicates that a write operation has completed; and a control line discharge circuit in communication with the decision logic circuit and the control line, the control line discharge circuit configured to discharge the control line and to thereby stop the write operation in response to the decision logic circuit determining that the write operation has completed; wherein the write operation can be a SET operation to change the resistance of the non-volatile storage element from a high resistance state to a low resistance state and can be a RESET operation to change the resistance of the non-volatile storage element from the low resistance state to the high resistance state; the current comparison circuit, the decision logic circuit and the control discharge circuit being configured to perform the comparing, the determining and the discharging respectively during the SET operation and during the RESET operation; the decision logic circuit comprises combinational logic for determining whether a successful SET operation has been completed and for determining whether a successful RESET operation has been completed; and the control line is a bit line, said non-volatile storage element being connected to said bit line and to a word line. a non-volatile storage element; a control line in communication with the non-volatile storage element; a current comparison circuit in communication with the control line, the current comparison circuit configured to compare a current indicative of current in the control line with a reference (I REFDET) and to provide an output based on the comparing; a decision logic circuit in communication with the output of the current comparison circuit, the decision logic circuit configured to determine whether the output indicates that a write operation has completed; and a control line discharge circuit in communication with the decision logic circuit and the control line, the control line discharge circuit configured to discharge the control line and to thereby stop the write operation in response to the decision logic circuit determining that the write operation has completed; wherein the write operation can be a SET operation to change the resistance of the non-volatile storage element from a high resistance state to a low resistance state and can be a RESET operation to change the resistance of the non-volatile storage element from the low resistance state to the high resistance state; the current comparison circuit, the decision logic circuit and the control discharge circuit being configured to perform the comparing, the determining and the discharging respectively during the SET operation and during the RESET operation; the decision logic circuit comprises combinational logic for determining whether a successful SET operation has been completed and for determining whether a successful RESET operation has been completed; and the control line is a bit line, said non-volatile storage element being connected to said bit line and to a word line.