A method for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell comprises a semiconductor substrate having a passivation layer thereon, the method comprising: providing a plurality of contact openings through the passivation layer to the semiconductor substrate; selectively plating a contact metal into the plurality of contact openings to deposit the contact metal; depositing at least one metal containing layer over the deposited contact metal to form metal gridlines; and firing the deposited contact metal and the deposited metal containing material, characterized in that the method further comprises one of: (a) light activating portions of the surface of the passivation layer surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal into the plurality of contact openings also deposits the contact metal onto the light activated portions of the passivation layer, (b) depositing a light sensitive seed layer on the passivation layer prior to forming the plurality of contact openings in the passivation layer, and light activating the seed layer in portions on and surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal deposits the contact metal at light activated portions of the seed layer and in the plurality of contact openings, or (c) depositing a self-assembled monolayer material on the passivation layer following forming the plurality of contact openings in the passivation layer at portions on and surrounding one or more of the plurality of contact openings, and wherein the selective plating of the contact metal deposits the contact metal on the self-assembled monolayer and in the plurality of contact openings. providing a plurality of contact openings through the passivation layer to the semiconductor substrate; selectively plating a contact metal into the plurality of contact openings to deposit the contact metal; depositing at least one metal containing layer over the deposited contact metal to form metal gridlines; and firing the deposited contact metal and the deposited metal containing material, characterized in that the method further comprises one of: (a) light activating portions of the surface of the passivation layer surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal into the plurality of contact openings also deposits the contact metal onto the light activated portions of the passivation layer, (b) depositing a light sensitive seed layer on the passivation layer prior to forming the plurality of contact openings in the passivation layer, and light activating the seed layer in portions on and surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal deposits the contact metal at light activated portions of the seed layer and in the plurality of contact openings, or (c) depositing a self-assembled monolayer material on the passivation layer following forming the plurality of contact openings in the passivation layer at portions on and surrounding one or more of the plurality of contact openings, and wherein the selective plating of the contact metal deposits the contact metal on the self-assembled monolayer and in the plurality of contact openings. (a) light activating portions of the surface of the passivation layer surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal into the plurality of contact openings also deposits the contact metal onto the light activated portions of the passivation layer, (b) depositing a light sensitive seed layer on the passivation layer prior to forming the plurality of contact openings in the passivation layer, and light activating the seed layer in portions on and surrounding one or more of the plurality of contact openings, wherein the selective plating of the contact metal deposits the contact metal at light activated portions of the seed layer and in the plurality of contact openings, or (c) depositing a self-assembled monolayer material on the passivation layer following forming the plurality of contact openings in the passivation layer at portions on and surrounding one or more of the plurality of contact openings, and wherein the selective plating of the contact metal deposits the contact metal on the self-assembled monolayer and in the plurality of contact openings.