A pixel comprising: a plurality of vertical pinned photodiodes (44, 45, 46), each vertical pinned photodiode having dimensions in x, y and z directions representing a width, a length and a depth, into a substrate respectively, wherein a pinning dimension of each of the vertical pinned photodiodes is a narrowest dimension of each of the vertical pinned photodiodes and is the dimension in the x direction or the dimension in the y direction, each vertical pinned photodiode being configured to receive incoming light via a back surface defined in the x and y directions; a single floating diffusion implant; a single transfer gate; characterized in that: the pixel comprises a single photo-gate above the vertical pinned photodiodes (44, 45, 46); in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes (44, 45, 46) to the floating diffusion implant, such that the charge from said plurality of vertical pinned photodiodes (44, 45, 46) is combined at said floating diffusion implant, and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage. a plurality of vertical pinned photodiodes (44, 45, 46), each vertical pinned photodiode having dimensions in x, y and z directions representing a width, a length and a depth, into a substrate respectively, wherein a pinning dimension of each of the vertical pinned photodiodes is a narrowest dimension of each of the vertical pinned photodiodes and is the dimension in the x direction or the dimension in the y direction, each vertical pinned photodiode being configured to receive incoming light via a back surface defined in the x and y directions; a single floating diffusion implant; a single transfer gate; characterized in that: the pixel comprises a single photo-gate above the vertical pinned photodiodes (44, 45, 46); in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes (44, 45, 46) to the floating diffusion implant, such that the charge from said plurality of vertical pinned photodiodes (44, 45, 46) is combined at said floating diffusion implant, and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage. the pixel comprises a single photo-gate above the vertical pinned photodiodes (44, 45, 46); in that the single transfer gate is adjacent the photo-gate and between the single photo-gate and the single floating diffusion implant; and in that the single photo-gate and the single transfer gate are configured such that, in use, the single photo-gate and the single transfer gate are at a high voltage to allow a charge to be transferred from each of said plurality of vertical pinned photodiodes (44, 45, 46) to the floating diffusion implant, such that the charge from said plurality of vertical pinned photodiodes (44, 45, 46) is combined at said floating diffusion implant, and during an integration period the single photo-gate is at a high voltage and the single transfer gate is at a low voltage.