A semiconductor power device (100, 200, 400) comprising: - a first substrate (140, 240, 340) comprising a switching semiconductor element (144, 244, 344), the first substrate (140, 240, 340) having a first surface (141, 241, 341), comprising a first receiving element (150, 250, 350) and locally comprising first electrically conductive layers (142, 146, 246, 242, 342, 345), the switching semiconductor element (144, 244, 344) being provided on the first surface (141, 241, 341), - a second substrate (110, 210, 310) comprising a second surface (111, 211, 311) facing the first surface (141, 241, 341), the second substrate (110, 210, 310) comprising a second receiving element (120, 220, 320) and locally comprising second electrically conductive layers (112, 116, 212, 216, 312...318); and - an interconnect structure for providing at least one electrical connection between at least one of the first electrically conductive layers (142, 146, 246, 242, 342, 345) at one side and at least one of the second electrically conductive layers (112, 116, 212, 216, 312...318) at the other side, the interconnect structure comprising a plurality of interconnect elements (130, 132, 230, 232, 332, 332', 430) of an electrically conductive material, at least one of the plurality of interconnect elements being an alignment interconnect element (130, 230, 430), the alignment interconnect element (130, 230, 430) being partially received by the first receiving element (150, 250, 350) and being partially received by the second receiving element (120, 220, 320) for aligning a relative position of the first substrate (140, 240, 340) with respect to the second substrate (110, 210, 310), wherein said receiving elements (120, 150, 220, 250, 320, 350) having a recess shaped for at least partially receiving the alignment interconnect element (130, 230, 430) and a shape of the alignment interconnect element (130, 230, 430) is selected to affect a positioning of the alignment interconnect element (130, 230, 430) to a unique fixed position with respect to each one of the receiving elements (120, 150, 220, 250, 320, 350), when a respective one of said receiving elements (120, 150, 220, 250, 320, 350) and the alignment interconnect element (130, 230, 430) are applied to each other and when the respective one of the alignment interconnect element (130, 230, 430) or said receiving element (120, 150, 220, 250, 320, 350) receives a force, wherein at least one of the first receiving element (150, 250, 350) and the second receiving element (120, 220, 320) is a hole or a recess in one of said first electrically conductive layers (142, 146, 242, 246, 342, 345) and one of said second electrically conductive layers (112, 116, 212, 216, 316, 312, 314, 318), respectively. - a first substrate (140, 240, 340) comprising a switching semiconductor element (144, 244, 344), the first substrate (140, 240, 340) having a first surface (141, 241, 341), comprising a first receiving element (150, 250, 350) and locally comprising first electrically conductive layers (142, 146, 246, 242, 342, 345), the switching semiconductor element (144, 244, 344) being provided on the first surface (141, 241, 341), - a second substrate (110, 210, 310) comprising a second surface (111, 211, 311) facing the first surface (141, 241, 341), the second substrate (110, 210, 310) comprising a second receiving element (120, 220, 320) and locally comprising second electrically conductive layers (112, 116, 212, 216, 312...318); and - an interconnect structure for providing at least one electrical connection between at least one of the first electrically conductive layers (142, 146, 246, 242, 342, 345) at one side and at least one of the second electrically conductive layers (112, 116, 212, 216, 312...318) at the other side, the interconnect structure comprising a plurality of interconnect elements (130, 132, 230, 232, 332, 332', 430) of an electrically conductive material,