Quantum device with spin qubits, comprising a least: - a first semiconducting layer comprising a first matrix of data qubits and measurement qubits connected to each other through tunnel barriers; - means of addressing data qubits and measurement qubits configured for controlling conduction of each tunnel barrier by the field effect and comprising at least: • first and second electrically conducting portions (116, 124) arranged in first and second superposed metallisation levels (112, 114) respectively; • first and second electrically conducting vias (118, 126) each comprising a first end (120, 128) connected to one of the first and second electrically conducting portions (118, 126) respectively, and a second end (122, 130) located facing one of the tunnel barriers; - a first dielectric layer interposed between the tunnel barriers and the second ends (122, 130) of the first and second electrically conducting vias (118, 126); and further comprising: - in a first configuration, a second semiconducting layer comprising a second charge detectors matrix, each of the measurement qubits being electrically connected to one of the charge detectors through a first semiconducting portion extending between the first and second semiconducting layers (102, 132), each of the first semiconducting portions being coupled to at least one gate (142a, 142b) configured for controlling tunnel coupling between the charge detector and the measurement qubit connected through said first semiconducting portion, or - in a second configuration, a second semiconducting layer and a second charge detectors matrix formed from second semiconducting portions extending between the first and second semiconducting layers (102, 132), each of said second semiconducting portions being connected by at least one third tunnel barrier to at least one of the measurement qubits, located in the plane of the first semiconducting layer, around said second semiconducting portion. - a first semiconducting layer comprising a first matrix of data qubits and measurement qubits connected to each other through tunnel barriers; - means of addressing data qubits and measurement qubits configured for controlling conduction of each tunnel barrier by the field effect and comprising at least: • first and second electrically conducting portions (116, 124) arranged in first and second superposed metallisation levels (112, 114) respectively; • first and second electrically conducting vias (118, 126) each comprising a first end (120, 128) connected to one of the first and second electrically conducting portions (118, 126) respectively, and a second end (122, 130) located facing one of the tunnel barriers; • first and second electrically conducting portions (116, 124) arranged in first and second superposed metallisation levels (112, 114) respectively; • first and second electrically conducting vias (118, 126) each comprising a first end (120, 128) connected to one of the first and second electrically conducting portions (118, 126) respectively, and a second end (122, 130) located facing one of the tunnel barriers; - a first dielectric layer interposed between the tunnel barriers and the second ends (122, 130) of the first and second electrically conducting vias (118, 126); and further comprising: - in a first configuration, a second semiconducting layer comprising a second charge detectors matrix, each of the measurement qubits being electrically connected to one of the charge detectors through a first semiconducting portion extending between the first and second semiconducting layers (102, 132), each of the first semiconducting portions being coupled to at least one gate (142a, 142b) configured for controlling tunnel coupling between the charge detector and the measurement qubit connected through said first semiconducting portion, or - in a second configuration, a second semiconducting layer and a second charge detectors matrix formed from second semiconducting portions extending between the first and second semiconducting layers (102, 132), each of said second semiconducting portions being connected by at least one third tunnel barrier to at least one of the measurement qubits, located in the plane of the first semiconducting layer, around said second semiconducting portion.