A memory device, comprising: an array of magnetic memory cells, the array comprising: elongate features each defining an elongate feature length (L 1) along a first direction (x) and an elongate feature width along a second direction (y), width, each elongate feature of the elongate features comprising: a magnetic material having the elongate feature length (L 1) on a base material, the magnetic material exhibiting a vertical magnetic orientation; and a non-magnetic material having the elongate feature length (L 1) on the magnetic material; discrete features each defining a discrete feature length (L u) along the first direction (x) which is less than the elongate feature length (L 1), each discrete feature of the discrete features comprising another magnetic material exhibiting another vertical magnetic orientation, more than one of the discrete features disposed on an elongate feature of the elongate features, neighboring discrete features of the discrete features spaced along the second direction (y) by a portion of a dielectric material between the neighboring discrete features of the discrete features; characterised by continuous planar spacers along the portions of the dielectric material, the continuous planar spacers defining the elongate feature length (L 1) and extending along the width of the elongate features, the continuous planar spacers configured for forming the elongate features. elongate features each defining an elongate feature length (L 1) along a first direction (x) and an elongate feature width along a second direction (y), width, each elongate feature of the elongate features comprising: a magnetic material having the elongate feature length (L 1) on a base material, the magnetic material exhibiting a vertical magnetic orientation; and a non-magnetic material having the elongate feature length (L 1) on the magnetic material; a magnetic material having the elongate feature length (L 1) on a base material, the magnetic material exhibiting a vertical magnetic orientation; and a non-magnetic material having the elongate feature length (L 1) on the magnetic material; discrete features each defining a discrete feature length (L u) along the first direction (x) which is less than the elongate feature length (L 1), each discrete feature of the discrete features comprising another magnetic material exhibiting another vertical magnetic orientation, more than one of the discrete features disposed on an elongate feature of the elongate features, neighboring discrete features of the discrete features spaced along the second direction (y) by a portion of a dielectric material between the neighboring discrete features of the discrete features; characterised by continuous planar spacers along the portions of the dielectric material, the continuous planar spacers defining the elongate feature length (L 1) and extending along the width of the elongate features, the continuous planar spacers configured for forming the elongate features. characterised by continuous planar spacers along the portions of the dielectric material, the continuous planar spacers defining the elongate feature length (L 1) and extending along the width of the elongate features, the continuous planar spacers configured for forming the elongate features.