A method for processing a semiconductor structure comprising: providing a semiconductor structure, the semiconductor structure comprising a substrate and a plurality of etched structures arranged on a surface area of the substrate; forming a transition layer, the transition layer at least covering inner walls of the plurality of etched structures, the transition layer being configured to reduce a capillary force exerted by a fluid on the etched structures and to serve as a sacrificial layer configured to repair a collapsed structure; wherein the forming a transition layer, the transition layer at least covering inner walls of the plurality of etched structures comprises: oxidizing the semiconductor structure to form an oxide layer, the oxide layer at least covering inner walls of the trenches, the oxide layer being the transition layer; drying the semiconductor structure; and removing the transition layer, after drying the semiconductor structure; wherein the removing the transition layer comprises: removing the transition layer by means of a mixed gas comprising hydrogen fluoride and ammonia gas as etching gas; wherein flow ratio of the hydrogen fluoride to the ammonia gas is (1~2):1; flow rate of the hydrogen fluoride and the ammonia gas is 10 sccm~300 sccm, temperature is 20°C~150°C, and duration is 1 s~60 s, pressure in a processing chamber is 1 mtorr~5,000 mtorr, and temperature of a support platform is 20°C~150°C. providing a semiconductor structure, the semiconductor structure comprising a substrate and a plurality of etched structures arranged on a surface area of the substrate; forming a transition layer, the transition layer at least covering inner walls of the plurality of etched structures, the transition layer being configured to reduce a capillary force exerted by a fluid on the etched structures and to serve as a sacrificial layer configured to repair a collapsed structure; wherein the forming a transition layer, the transition layer at least covering inner walls of the plurality of etched structures comprises: oxidizing the semiconductor structure to form an oxide layer, the oxide layer at least covering inner walls of the trenches, the oxide layer being the transition layer; drying the semiconductor structure; and removing the transition layer, after drying the semiconductor structure; wherein the removing the transition layer comprises: removing the transition layer by means of a mixed gas comprising hydrogen fluoride and ammonia gas as etching gas; wherein flow ratio of the hydrogen fluoride to the ammonia gas is (1~2):1; flow rate of the hydrogen fluoride and the ammonia gas is 10 sccm~300 sccm, temperature is 20°C~150°C, and duration is 1 s~60 s, pressure in a processing chamber is 1 mtorr~5,000 mtorr, and temperature of a support platform is 20°C~150°C. oxidizing the semiconductor structure to form an oxide layer, the oxide layer at least covering inner walls of the trenches, the oxide layer being the transition layer; drying the semiconductor structure; and removing the transition layer, after drying the semiconductor structure; wherein the removing the transition layer comprises: removing the transition layer by means of a mixed gas comprising hydrogen fluoride and ammonia gas as etching gas; wherein flow ratio of the hydrogen fluoride to the ammonia gas is (1~2):1; flow rate of the hydrogen fluoride and the ammonia gas is 10 sccm~300 sccm, temperature is 20°C~150°C, and duration is 1 s~60 s, pressure in a processing chamber is 1 mtorr~5,000 mtorr, and temperature of a support platform is 20°C~150°C. removing the transition layer by means of a mixed gas comprising hydrogen fluoride and ammonia gas as etching gas; wherein flow ratio of the hydrogen fluoride to the ammonia gas is (1~2):1; flow rate of the hydrogen fluoride and the ammonia gas is 10 sccm~300 sccm, temperature is 20°C~150°C, and duration is 1 s~60 s, pressure in a processing chamber is 1 mtorr~5,000 mtorr, and temperature of a support platform is 20°C~150°C.