A semiconductor module comprising: a first and a second insulating substrates (41;61) that have a first plane (41A; 61A) and a second plane (41B;61B) both of which face mutually opposite directions; a first element bonding conductor layer formed on the first plane of the first insulating substrate; a second element bonding conductor layer formed on the first plane of the second insulating substrate; a second conductor layer (42;62) respectively formed on the second plane (41B; 61B) of the first and the second insulating substrates (41;61); a plurality of semiconductor devices (Tr1,Di1;Tr2,Di2) respectively bonded to the first element bonding conductor layer and the second element bonding conductor layer with a first solder layer (86;88) interposed there between, characterized by a third conductor layer formed apart from the first element bonding conductor layer on the first plane of the first insulating substrate; a first wire by which the semiconductor device bonded to the first element bonding conductor layer and the third conductor layer are connected together; and a second wire by which the second element bonding conductor layer and the third conductor layer are connected together, wherein the first element bonding conductor layer has a first part of the first element bonding conductor layer formed in a rectangular shape, wherein the second element bonding conductor layer has a first part of the second element bonding conductor layer formed in a rectangular shape, wherein the third conductor layer has a first element connecting area which is disposed along one long side of the first part of the first element bonding conductor layer and to which the first wire is connected, and a second element connecting area which is disposed along one short side of the first part of the second element bonding conductor layer and to which the second wire is connected. a first and a second insulating substrates (41;61) that have a first plane (41A; 61A) and a second plane (41B;61B) both of which face mutually opposite directions; a first element bonding conductor layer formed on the first plane of the first insulating substrate; a second element bonding conductor layer formed on the first plane of the second insulating substrate; a second conductor layer (42;62) respectively formed on the second plane (41B; 61B) of the first and the second insulating substrates (41;61); a plurality of semiconductor devices (Tr1,Di1;Tr2,Di2) respectively bonded to the first element bonding conductor layer and the second element bonding conductor layer with a first solder layer (86;88) interposed there between, characterized by a third conductor layer formed apart from the first element bonding conductor layer on the first plane of the first insulating substrate; a first wire by which the semiconductor device bonded to the first element bonding conductor layer and the third conductor layer are connected together; and a second wire by which the second element bonding conductor layer and the third conductor layer are connected together, wherein the first element bonding conductor layer has a first part of the first element bonding conductor layer formed in a rectangular shape, wherein the second element bonding conductor layer has a first part of the second element bonding conductor layer formed in a rectangular shape, wherein the third conductor layer has a first element connecting area which is disposed along one long side of the first part of the first element bonding conductor layer and to which the first wire is connected, and a second element connecting area which is disposed along one short side of the first part of the second element bonding conductor layer and to which the second wire is connected.