A method of making a plurality of packaged semiconductor devices, the method comprising: providing a carrier blank having a die receiving surface and an underside; mounting a plurality of semiconductor dies on the die receiving surface of the carrier blank, wherein the dies extend to a first height above the die receiving surface; depositing an encapsulant on the die receiving surface, wherein an upper surface of the encapsulant is located above said first height, whereby the encapsulant covers the plurality of semiconductor dies; and singulating the carrier blank and encapsulant to form the plurality of packaged semiconductor devices by: sawing into the underside of the carrier to saw through the carrier blank and saw partially through the encapsulant to a saw depth intermediate the first height and the upper surface of the encapsulant, wherein said sawing separates the carrier blank into a plurality of carriers, each carrier having an underside corresponding to the underside of the carrier blank and a die receiving surface corresponding to the die receiving surface of the carrier blank, wherein the die receiving surface of each carrier has at least one of said semiconductor dies mounted thereon; and removing encapsulant from upper surface of the encapsulant at least until said saw depth is reached; wherein said sawing comprises blade sawing, plasma sawing, ablation sawing, or laser sawing. providing a carrier blank having a die receiving surface and an underside; mounting a plurality of semiconductor dies on the die receiving surface of the carrier blank, wherein the dies extend to a first height above the die receiving surface; depositing an encapsulant on the die receiving surface, wherein an upper surface of the encapsulant is located above said first height, whereby the encapsulant covers the plurality of semiconductor dies; and singulating the carrier blank and encapsulant to form the plurality of packaged semiconductor devices by: sawing into the underside of the carrier to saw through the carrier blank and saw partially through the encapsulant to a saw depth intermediate the first height and the upper surface of the encapsulant, wherein said sawing separates the carrier blank into a plurality of carriers, each carrier having an underside corresponding to the underside of the carrier blank and a die receiving surface corresponding to the die receiving surface of the carrier blank, wherein the die receiving surface of each carrier has at least one of said semiconductor dies mounted thereon; and removing encapsulant from upper surface of the encapsulant at least until said saw depth is reached; wherein said sawing comprises blade sawing, plasma sawing, ablation sawing, or laser sawing. sawing into the underside of the carrier to saw through the carrier blank and saw partially through the encapsulant to a saw depth intermediate the first height and the upper surface of the encapsulant, wherein said sawing separates the carrier blank into a plurality of carriers, each carrier having an underside corresponding to the underside of the carrier blank and a die receiving surface corresponding to the die receiving surface of the carrier blank, wherein the die receiving surface of each carrier has at least one of said semiconductor dies mounted thereon; and removing encapsulant from upper surface of the encapsulant at least until said saw depth is reached; wherein said sawing comprises blade sawing, plasma sawing, ablation sawing, or laser sawing.