A light emitting device comprising: a light emitting structure comprising a first conductivity type semiconductor layer doped with a first conductivity type dopant, an active layer on the first conductivity type semiconductor layer and a second conductivity type semiconductor layer doped with a second conductivity type dopant on the active layer, wherein the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer are disposed adjacent to each other, and the active layer comprises a well layer and a barrier layer which are alternatively stacked at least one time, and an energy band gap of the well layer is smaller than an energy band gap of the barrier layer; a multi-contact layer directly disposed on at least a predetermined region of the second conductivity type semiconductor layer, and a first electrode and a second electrode to provide currents to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; wherein the first conductivity type dopant is n-type dopant and the second conductivity type dopant is p-type dopant and the second conductivity type semiconductor layer and the multi-contact layer are doped with an opposite conductivity type dopant and a p-n junction is formed between the second conductivity type semiconductor layer and the multi-contact layer and wherein the multi-contact layer comprises a first layer formed of InGaN having the first conductivity type dopant doped therein, a second layer formed of GaN, a third layer formed of InGaN having the first conductivity type dopant doped therein, and a fourth layer, characterized in that the second layer has the first conductivity type dopant doped therein, and in that the fourth layer is formed of InGaN having the first conductivity type dopant therein. a light emitting structure comprising a first conductivity type semiconductor layer doped with a first conductivity type dopant, an active layer on the first conductivity type semiconductor layer and a second conductivity type semiconductor layer doped with a second conductivity type dopant on the active layer, wherein the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer are disposed adjacent to each other, and the active layer comprises a well layer and a barrier layer which are alternatively stacked at least one time, and an energy band gap of the well layer is smaller than an energy band gap of the barrier layer; a multi-contact layer directly disposed on at least a predetermined region of the second conductivity type semiconductor layer, and a first electrode and a second electrode to provide currents to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; wherein the first conductivity type dopant is n-type dopant and the second conductivity type dopant is p-type dopant and the second conductivity type semiconductor layer and the multi-contact layer are doped with an opposite conductivity type dopant and a p-n junction is formed between the second conductivity type semiconductor layer and the multi-contact layer and wherein the multi-contact layer comprises a first layer formed of InGaN having the first conductivity type dopant doped therein, a second layer formed of GaN, a third layer formed of InGaN having the first conductivity type dopant doped therein, and a fourth layer, characterized in that the second layer has the first conductivity type dopant doped therein, and in that the fourth layer is formed of InGaN having the first conductivity type dopant therein.