A method for producing a silicon carbide ceramic comprising: a forming raw material preparing step of mixing plural kinds of silicon carbide ceramic powders containing 4H-SiC silicon carbide crystals at respectively different content ratios to prepare a forming raw material, said content ratio of 4H-SiC silicon carbide crystals of each kind of said powders being the content ratio of 4H-SiC silicon carbide crystals with respect to the entire content of silicon carbide crystals in the respective kind of powders; a forming step of forming the forming raw material to form a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic containing 4H-SiC silicon carbide crystals; wherein: the plural kinds of silicon carbide ceramic powders are composed of first 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a smaller said content ratio of 4H-SiC silicon carbide crystal compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced and second 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a larger said content ratio of 4H-SiC silicon carbide crystal content compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced; said content ratio of the 4H-SiC silicon carbide crystals in the first 4H-SiC silicon carbide ceramic powders is 0.01 to 15 mass%, and said content ratio of the 4H-SiC silicon carbide crystals in the second 4H-SiC silicon carbide ceramic powders is 0.5 to 40 mass%; the silicon carbide ceramic to be produced contains 0.1 to 25 mass% of 4H-SiC silicon carbide crystals and 50 to 99.9 mass% of 6H-SiC silicon carbide crystals with respect to the entire content of silicon carbide crystals; and metal silicon powders are contained in the forming raw material, and the silicon carbide ceramic to be produced contains a plurality of silicon carbide particles and silicon for binding the silicon carbide particles to each other. a forming raw material preparing step of mixing plural kinds of silicon carbide ceramic powders containing 4H-SiC silicon carbide crystals at respectively different content ratios to prepare a forming raw material, said content ratio of 4H-SiC silicon carbide crystals of each kind of said powders being the content ratio of 4H-SiC silicon carbide crystals with respect to the entire content of silicon carbide crystals in the respective kind of powders; a forming step of forming the forming raw material to form a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic containing 4H-SiC silicon carbide crystals; wherein: the plural kinds of silicon carbide ceramic powders are composed of first 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a smaller said content ratio of 4H-SiC silicon carbide crystal compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced and second 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a larger said content ratio of 4H-SiC silicon carbide crystal content compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced; said content ratio of the 4H-SiC silicon carbide crystals in the first 4H-SiC silicon carbide ceramic powders is 0.01 to 15 mass%, and said content ratio of the 4H-SiC silicon carbide crystals in the second 4H-SiC silicon carbide ceramic powders is 0.5 to 40 mass%; the plural kinds of silicon carbide ceramic powders are composed of first 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a smaller said content ratio of 4H-SiC silicon carbide crystal compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced and second 4H-SiC silicon carbide ceramic powders being silicon carbide ceramic powders having a larger said content ratio of 4H-SiC silicon carbide crystal content compared with said content ratio of 4H-SiC silicon carbide crystals in the silicon carbide ceramic to be produced; said content ratio of the 4H-SiC silicon carbide crystals in the first 4H-SiC silicon carbide ceramic powders is 0.01 to 15 mass%, and said content ratio of the 4H-SiC silicon carbide crystals in the second 4H-SiC silicon carbide ceramic powders is 0.5 to 40 mass%; the silicon carbide ceramic to be produced contains 0.1 to 25 mass% of 4H-SiC silicon carbide crystals and 50 to 99.9 mass% of 6H-SiC silicon carbide crystals with respect to the entire content of silicon carbide crystals; and metal silicon powders are contained in the forming raw material, and the silicon carbide ceramic to be produced contains a plurality of silicon carbide particles and silicon for binding the silicon carbide particles to each other.