A system comprising: A multilayer overlay target, comprising: a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements (802a, 802b, 802c, 802d), wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, wherein each target structure is invariant to N degree rotation about the common center of symmetry, wherein N is equal to 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is not invariant to 90 degree rotation about the individual center of symmetry; wherein at least one of the two or more pattern elements of at least one of the target structures comprises: a pattern element having three sub-elements, wherein the three sub-elements are arranged in a periodic pattern; and wherein the set of two or more pattern elements of each target structure are printed above or below a layer of dummy fill consisting of a periodic grating structure; wherein the sub-elements of each pattern element are aligned orthogonally with the grating structure, wherein the sub-elements comprise three parallel rectangular shaped sub-elements, wherein each of the two or more pattern elements of each target structure is invariant by design to M degree rotation about the individual center of symmetry, wherein M is equal to 180 degrees; An apparatus configured to measure overlay from the multilayer overlay, comprising: an illumination source configured to illuminate a plurality of target structures of the multilayer overlay target disposed on one or more process layers of a semiconductor device; a main objective lens configured to direct light from the illumination source to the surface of the multilayer overlay target and direct light reflected from the plurality of the target structures to a detector; Wherein the detector is configured to collect the light reflected from the plurality of target structures; and wherein the periodicity of the dummy fill structure or the dummy fill structure and the sub-elements is of a resolution such that the positive and negative first diffraction orders fall outside the aperture of the objective lens. A multilayer overlay target, comprising: a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements (802a, 802b, 802c, 802d), wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, wherein each target structure is invariant to N degree rotation about the common center of symmetry, wherein N is equal to 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is not invariant to 90 degree rotation about the individual center of symmetry; wherein at least one of the two or more pattern elements of at least one of the target structures comprises: a pattern element having three sub-elements, wherein the three sub-elements are arranged in a periodic pattern; and wherein the set of two or more pattern elements of each target structure are printed above or below a layer of dummy fill consisting of a periodic grating structure; wherein the sub-elements of each pattern element are aligned orthogonally with the grating structure, wherein the sub-elements comprise three parallel rectangular shaped sub-elements, wherein each of the two or more pattern elements of each target structure is invariant by design to M degree rotation about the individual center of symmetry, wherein M is equal to 180 degrees; An apparatus configured to measure overlay from the multilayer overlay, comprising: an illumination source configured to illuminate a plurality of target structures of the multilayer overlay target disposed on one or more process layers of a semiconductor device; a main objective lens configured to direct light from the illumination source to the surface of the multilayer overlay target and direct light reflected from the plurality of the target structures to a detector; Wherein the detector is configured to collect the light reflected from the plurality of target structures; and an illumination source configured to illuminate a plurality of target structures of the multilayer overlay target disposed on one or more process layers of a semiconductor device; a main objective lens configured to direct light from the illumination source to the surface of the multilayer overlay target and direct light reflected from the plurality of the target structures to a detector; Wherein the detector is configured to collect the light reflected from the plurality of target structures; and wherein the periodicity of the dummy fill structure or the dummy fill structure and the sub-elements is of a resolution such that the positive and negative first diffraction orders fall outside the aperture of the objective lens.