A back-illuminated solid-state imaging device, comprising: a semiconductor substrate including a light incident surface and a light-detective surface opposite to the light incident surface; a light receiving portion generating a charge in accordance with light incidence, the light receiving portion being disposed on a side of said light-detective surface; a charge transfer unit disposed on the side of the light-detective surface opposite to the light incident surface of the semiconductor substrate; a light-shielding film disposed on the side of the light-detective surface of the semiconductor substrate, wherein the light-shielding film includes an uneven surface opposing the light-detective surface; an insulating film between the semiconductor substrate and the light-shielding film, the light-shielding film being disposed on the insulating film, wherein the insulating film is formed to cover the entire area of the light-detecting surface of the semiconductor substrate and wherein the light-shielding film is disposed on the insulating film to cover the entire area of the insulating film; a plurality of conductors (45, 46, 47, 48, 53, 55) disposed in the insulating film and along the light-detective surface, wherein the plurality of conductors (45, 46, 47, 48, 53, 55) is disposed on the light receiving portion and in the charge transfer unit and includes a plurality of first conductors (45, 47, 53) and a plurality of second conductors (46, 48, 55), the first conductors and the second conductors being disposed alternately with their ends overlapping each other so that there exist alternately arranged overlapping areas and other areas where only one first conductor or only one second conductor is present, the overlapping areas and other areas forming differences in level along a direction parallel to the light-detective surface; wherein the insulating film includes asperities formed in a manner corresponding to said differences in level formed by the first conductors and the second conductors; wherein the uneven surface of the light-shielding film is formed to conform to the asperities of the insulating film; wherein the asperities of the insulating film include projections corresponding to said overlapping areas of the first conductors (45, 47, 53) and second conductors (46, 48, 55), and depressions corresponding to said other areas including only one first conductor (45, 47, 53) or second conductor (46, 48, 55). a semiconductor substrate including a light incident surface and a light-detective surface opposite to the light incident surface; a light receiving portion generating a charge in accordance with light incidence, the light receiving portion being disposed on a side of said light-detective surface; a charge transfer unit disposed on the side of the light-detective surface opposite to the light incident surface of the semiconductor substrate; a light-shielding film disposed on the side of the light-detective surface of the semiconductor substrate, wherein the light-shielding film includes an uneven surface opposing the light-detective surface; an insulating film between the semiconductor substrate and the light-shielding film, the light-shielding film being disposed on the insulating film, wherein the insulating film is formed to cover the entire area of the light-detecting surface of the semiconductor substrate and wherein the light-shielding film is disposed on the insulating film to cover the entire area of the insulating film; a plurality of conductors (45, 46, 47, 48, 53, 55) disposed in the insulating film and along the light-detective surface, wherein the plurality of conductors (45, 46, 47, 48, 53, 55) is disposed on the light receiving portion and in the charge transfer unit and includes a plurality of first conductors (45, 47, 53) and a plurality of second conductors (46, 48, 55), the first conductors and the second conductors being disposed alternately with their ends overlapping each other so that there exist alternately arranged overlapping areas and other areas where only one first conductor or only one second conductor is present, the overlapping areas and other areas forming differences in level along a direction parallel to the light-detective surface; wherein the insulating film includes asperities formed in a manner corresponding to said differences in level formed by the first conductors and the second conductors; wherein the uneven surface of the light-shielding film is formed to conform to the asperities of the insulating film; wherein the asperities of the insulating film include projections corresponding to said overlapping areas of the first conductors (45, 47, 53) and second conductors (46, 48, 55), and depressions corresponding to said other areas including only one first conductor (45, 47, 53) or second conductor (46, 48, 55).