An integrated capacitor comprising a layer of so-called functional dielectric material (DF cris) based on crystallised material of perovskite type, comprised between at least one first so-called bottom electrode (Ei) at the surface of a substrate and at least one second so-called top electrode (Es) comprising a first edge and a second edge opposite said first edge, said electrodes being electrically insulated by a layer of electrically insulating material (Di am) in order to allow at least one re-contact on the top electrode, characterised in that it comprises the following stack of layers on the surface of the functional material (DF cris): - the layer of electrically insulating material (Di am); - a locally etched contact recovery layer (Rc); - an insulating protective layer; - the contact recovery layer (Rc) is: ∘ locally in contact with and above the surface of the top electrode; ∘ locally in contact with and above the surface of the bottom electrode; o locally in contact with and above the surface of the layer of electrically insulating material (Di am); - the layer of electrically insulating material (D iam) is etched in order to expose portions of the top surfaces of the lower and top electrodes, said surfaces defining a first contact between the etched contact layer (Rc) and the surface of the top electrode and a second contact between the etched contact layer and the surface of the bottom electrode; - the layer of functional material (DF cris) is etched in order to expose part of the top surface of the bottom electrode and in order to allow access for said third contact; - the insulating protective layer is etched above the etched contact layer, to define a third contact of the etched contact layer (Rc) extending horizontally over the first edge of the top electrode and a fourth contact of the etched contact layer extending horizontally over the second opposite edge of the top electrode; - the electrically insulating material is made of an amorphous dielectric material of perovskite type (DI am) having a dielectric constant lower than that of the crystallised material of perovskite type and the amorphous electrically insulating dielectric material is an oxide of the following oxides PZT, SrTiO 3, (Ba,Sr)TiO 3, (Pb,La)(Zr,Ti)O 3, Pb(Mg,Nb,Ti)O 3, Pb(Zn,Nb,Ti)O 3, BiFeO 3, BaTiO 3; the substrate (S 0) being covered with a top layer of oxide (S 1); - said capacitor having a bonding layer between the substrate and the bottom electrode layer (C ac). - the layer of electrically insulating material (Di am); - a locally etched contact recovery layer (Rc); - an insulating protective layer; - the contact recovery layer (Rc) is: ∘ locally in contact with and above the surface of the top electrode; ∘ locally in contact with and above the surface of the bottom electrode; o locally in contact with and above the surface of the layer of electrically insulating material (Di am); ∘ locally in contact with and above the surface of the top electrode; ∘ locally in contact with and above the surface of the bottom electrode; o locally in contact with and above the surface of the layer of electrically insulating material (Di am); - the layer of electrically insulating material (D iam) is etched in order to expose portions of the top surfaces of the lower and top electrodes, said surfaces defining a first contact between the etched contact layer (Rc) and the surface of the top electrode and a second contact between the etched contact layer and the surface of the bottom electrode; - the layer of functional material (DF cris) is etched in order to expose part of the top surface of the bottom electrode and in order to allow access for said third contact; - the insulating protective layer is etched above the etched contact layer, to define a third contact of the etched contact layer (Rc) extending horizontally over the first edge of the top electrode and a fourth contact of the etched contact layer extending horizontally over the second opposite edge of the top electrode; - the electrically insulating material is made of an amorphous dielectric material of perovskite type (DI am) having a dielectric constant lower than that of the crystallised material of perovskite type and the amorphous electrically insulating dielectric material is an oxide of the following oxides PZT, SrTiO 3, (Ba,Sr)TiO 3, (Pb,La)(Zr,Ti)O 3, Pb(Mg,Nb,Ti)O 3, Pb(Zn,Nb,Ti)O 3, BiFeO 3, BaTiO 3; the substrate (S 0) being covered with a top layer of oxide (S 1); the amorphous electrically insulating dielectric material is an oxide of the following oxides PZT, SrTiO 3, (Ba,Sr)TiO 3, (Pb,La)(Zr,Ti)O 3, Pb(Mg,Nb,Ti)O 3, Pb(Zn,Nb,Ti)O 3, BiFeO 3, BaTiO 3; the substrate (S 0) being covered with a top layer of oxide (S 1); - said capacitor having a bonding layer between the substrate and the bottom electrode layer (C ac).