A semiconductor device comprising: a substrate; a plurality of light-emitting semiconductor structures disposed at a center portion of the substrate, each light-emitting semiconductor structure consisting of a semiconductor structure made of a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first pad and a second pad disposed on an edge part of the substrate; a first wiring line electrically connecting the first pad to at least one of the plurality of light-emitting semiconductor structures; a second wiring line electrically connecting the second pad to at least one of the plurality of light-emitting semiconductor structures; and a wavelength conversion layer disposed on the plurality of light-emitting semiconductor structures, wherein the plurality of light-emitting semiconductor structures are disposed to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, a separation distance between the plurality of light-emitting semiconductor structures is in a range of 5 μm to 40 μm, and wherein a thickness of each of the plurality of light-emitting semiconductor structures is in a range of 1 μm to 30 μm, wherein a thickness of the wavelength conversion layer disposed on upper surfaces of the semiconductor structures is in a range of 10 μm to 30 μm, and the wavelength conversion layer includes fluorescent particles, wherein an average diameter of the fluorescent particles is in a range of 1 μm to 20 μm. a substrate; a plurality of light-emitting semiconductor structures disposed at a center portion of the substrate, each light-emitting semiconductor structure consisting of a semiconductor structure made of a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first pad and a second pad disposed on an edge part of the substrate; a first wiring line electrically connecting the first pad to at least one of the plurality of light-emitting semiconductor structures; a second wiring line electrically connecting the second pad to at least one of the plurality of light-emitting semiconductor structures; and a wavelength conversion layer disposed on the plurality of light-emitting semiconductor structures, wherein the plurality of light-emitting semiconductor structures are disposed to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, a separation distance between the plurality of light-emitting semiconductor structures is in a range of 5 μm to 40 μm, and wherein a thickness of each of the plurality of light-emitting semiconductor structures is in a range of 1 μm to 30 μm, wherein a thickness of the wavelength conversion layer disposed on upper surfaces of the semiconductor structures is in a range of 10 μm to 30 μm, and the wavelength conversion layer includes fluorescent particles, wherein an average diameter of the fluorescent particles is in a range of 1 μm to 20 μm.