A semiconductor light-emitting device, comprising: a package having a cavity, a semiconductor light-emitting chip located at the bottom of said cavity and that emits light of a first peak wavelength in the blue wavelength range, and at least two layers (13, 14) filling said cavity and comprising a transparent silicone matrix material, wherein at least one of said at least two layers (13, 14) contains one or more wavelength-converting substances dispersed in the silicone matrix material and converting the light of the first peak wavelength from said semiconductor light-emitting chip at least partially into light of a second wavelength, such that a mix of light of the first peak wavelength and second wavelength is emitted from the device, wherein the concentration of said one or more wavelength converting substances continuously increases in a vertical direction towards the base surface of said semiconductor light-emitting chip, wherein said at least two layers (13, 14) comprise a first layer filling the lower portion of said cavity and has a curved top surface and optionally contains said one or more wavelength-converting substances, wherein said at least two layers (13, 14) comprise a second layer disposed on said curved top surface of said first layer and contains said one or more wavelength-converting substances and scattering particles, and wherein said at least two layers (13, 14) comprise two adjacent layers (13, 14), which differ in at least one of the following parameters: concentration of said one or more wavelength-converting substances, composition of said one or more wavelength-converting substances, and scattering particle concentration. a package having a cavity, a semiconductor light-emitting chip located at the bottom of said cavity and that emits light of a first peak wavelength in the blue wavelength range, and at least two layers (13, 14) filling said cavity and comprising a transparent silicone matrix material, wherein at least one of said at least two layers (13, 14) contains one or more wavelength-converting substances dispersed in the silicone matrix material and converting the light of the first peak wavelength from said semiconductor light-emitting chip at least partially into light of a second wavelength, such that a mix of light of the first peak wavelength and second wavelength is emitted from the device, wherein the concentration of said one or more wavelength converting substances continuously increases in a vertical direction towards the base surface of said semiconductor light-emitting chip, wherein said at least two layers (13, 14) comprise a first layer filling the lower portion of said cavity and has a curved top surface and optionally contains said one or more wavelength-converting substances, wherein said at least two layers (13, 14) comprise a second layer disposed on said curved top surface of said first layer and contains said one or more wavelength-converting substances and scattering particles, and wherein said at least two layers (13, 14) comprise two adjacent layers (13, 14), which differ in at least one of the following parameters: concentration of said one or more wavelength-converting substances, composition of said one or more wavelength-converting substances, and scattering particle concentration.