A press-fit terminal comprising: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate, wherein at least the substrate connection part has the surface structure described below; the surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu; characterized in that: the B layer is constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; the A layer has a thickness of 0.002 to 0.2 μm; the B layer has a thickness of 0.001 to 0.3 μm; the C layer has a thickness of 0.05 μm or larger; when a depth analysis by XPS (X-ray photoelectron spectroscopy) is carried out, a position (D 1) where an atomic concentration (at%) of Sn or In of the A layer is a maximum value, a position (D 2) where an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of the B layer is a maximum value, and a position (D 3) where an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of the C layer is a maximum value are present in the order of D 1, D 2, and D 3 from the outermost surface; and when a depth analysis by XPS is carried out the A layer has a maximum value of an atomic concentration (at%) of Sn or In of 10 at% or higher, and the B layer has a maximum value of an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of 10 at% or higher; and a depth where the C layer has an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of 25% or higher is 50 nm or more. a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate, wherein at least the substrate connection part has the surface structure described below; the surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu; an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu; characterized in that: the B layer is constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; the A layer has a thickness of 0.002 to 0.2 μm; the B layer has a thickness of 0.001 to 0.3 μm; the C layer has a thickness of 0.05 μm or larger; when a depth analysis by XPS (X-ray photoelectron spectroscopy) is carried out, a position (D 1) where an atomic concentration (at%) of Sn or In of the A layer is a maximum value, a position (D 2) where an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of the B layer is a maximum value, and a position (D 3) where an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of the C layer is a maximum value are present in the order of D 1, D 2, and D 3 from the outermost surface; and when a depth analysis by XPS is carried out the A layer has a maximum value of an atomic concentration (at%) of Sn or In of 10 at% or higher, and the B layer has a maximum value of an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of 10 at% or higher; and a depth where the C layer has an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of 25% or higher is 50 nm or more. the B layer is constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; the A layer has a thickness of 0.002 to 0.2 μm; the B layer has a thickness of 0.001 to 0.3 μm; the C layer has a thickness of 0.05 μm or larger; when a depth analysis by XPS (X-ray photoelectron spectroscopy) is carried out, a position (D 1) where an atomic concentration (at%) of Sn or In of the A layer is a maximum value, a position (D 2) where an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of the B layer is a maximum value, and a position (D 3) where an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of the C layer is a maximum value are present in the order of D 1, D 2, and D 3 from the outermost surface; and when a depth analysis by XPS is carried out the A layer has a maximum value of an atomic concentration (at%) of Sn or In of 10 at% or higher, and the B layer has a maximum value of an atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os, or Ir of 10 at% or higher; and a depth where the C layer has an atomic concentration (at%) of Ni, Cr, Mn, Fe, Co, or Cu of 25% or higher is 50 nm or more.