A method of manufacturing a magnetic device over a substrate, comprising: forming (408, 416, 418) a synthetic antiferromagnetic structure in a first plane, the synthetic antiferromagnetic structure comprising a magnetic reference layer, the magnetic reference layer having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction; forming a non-magnetic tunnel barrier layer in a second plane and over the magnetic reference layer; forming a free magnetic layer in a third plane and over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can precess from a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction; forming a non-magnetic spacer in a fourth plane and over the free magnetic layer, the non-magnetic spacer comprising MgO having a thickness in the range of 0.2 to 2.0 nm; forming a precessional spin current magnetic layer in a fifth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by the nonmagnetic spacer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component that is located within the fifth plane and can freely rotate in any magnetic direction in the fifth plane, the precessional spin current magnetic layer comprising an Fe layer, a Ru layer, and a face centered cubic, fcc, crystal structure layer comprising a material having a fcc crystal structure, the Fe layer being disposed over the non-magnetic spacer, the Ru layer being disposed over the Fe layer, and the fcc crystal structure layer being disposed over the Ru layer; and forming a capping layer in a sixth plane and over the precessional spin current magnetic layer. forming (408, 416, 418) a synthetic antiferromagnetic structure in a first plane, the synthetic antiferromagnetic structure comprising a magnetic reference layer, the magnetic reference layer having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction; forming a non-magnetic tunnel barrier layer in a second plane and over the magnetic reference layer; forming a free magnetic layer in a third plane and over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can precess from a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction; forming a non-magnetic spacer in a fourth plane and over the free magnetic layer, the non-magnetic spacer comprising MgO having a thickness in the range of 0.2 to 2.0 nm; forming a precessional spin current magnetic layer in a fifth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by the nonmagnetic spacer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component that is located within the fifth plane and can freely rotate in any magnetic direction in the fifth plane, the precessional spin current magnetic layer comprising an Fe layer, a Ru layer, and a face centered cubic, fcc, crystal structure layer comprising a material having a fcc crystal structure, the Fe layer being disposed over the non-magnetic spacer, the Ru layer being disposed over the Fe layer, and the fcc crystal structure layer being disposed over the Ru layer; and forming a capping layer in a sixth plane and over the precessional spin current magnetic layer.