A method for transferring a coating of sapphire (Al 2 O 3) from a first substrate onto a second flexible substrate comprising; at least one first deposition process to deposit at least one first thin film onto at least one first substrate to form at least one first thin film coated substrate, wherein said at least one first thin film comprises chromium; at least one second deposition process to deposit at least one second thin film onto the at least one first thin film coated substrate to form at least one second thin film coated substrate, wherein said at least one second thin film comprises silver; at least one third deposition process to deposit at least one metal catalyst onto the at least one second thin film coated substrate to form at least one metal catalyst coated substrate; at least one fourth deposition process to deposit at least one sapphire (Al 2 O 3) thin film onto the at least one metal catalyst coated substrate to form at least one sapphire (Al 2 O 3) coated substrate; at least one annealing process, wherein said at least one sapphire (Al 2 O 3) coated substrate is annealed under an annealing temperature ranging from 300 °C to 1300 °C for 30 mins to no more than 2 hours; attaching at least one said second substrate to surface of the at least one sapphire (Al 2 O 3) thin film of the at least one sapphire (Al 2 O 3) thin film coated substrate; at least one mechanical detachment process detaching the second substrate, the at least one sapphire (Al 2 O 3) thin film together with the at least one second thin film from the at least one first thin film coated substrate to form at least one second thin film coated sapphire (Al 2 O 3) thin film on said at least one second substrate; and at least one etching process removing the at least one second thin film from the at least one second thin film coated sapphire (Al 2 O 3) thin film on said at least one second substrate to form at least one sapphire (Al 2 O 3) thin film coated second substrate, wherein said first substrate comprises quartz, fused silica, silicon, glass, or toughen glass, and the second substrate comprises PET, polymers, plastics, paper or fabric and wherein said second substrate is not etch-able by the at least one etching process, wherein the at least one first thin film is not etch-able by the at least one etching process and the at least one second thin film is etch-able by the at least one etching process. a coating of sapphire (Al 2 O 3) from a first substrate onto a second flexible substrate comprising; at least one first deposition process to deposit at least one first thin film onto at least one first substrate to form at least one first thin film coated substrate, wherein said at least one first thin film comprises chromium; at least one second deposition process to deposit at least one second thin film onto the at least one first thin film coated substrate to form at least one second thin film coated substrate, wherein said at least one second thin film comprises silver; at least one third deposition process to deposit at least one metal catalyst onto the at least one second thin film coated substrate to form at least one metal catalyst coated substrate; at least one fourth deposition process to deposit at least one sapphire (Al 2 O 3) thin film onto the at least one metal catalyst coated substrate to form at least one sapphire (Al 2 O 3) coated substrate; at least one annealing process, wherein said at least one sapphire (Al 2 O 3) coated substrate is annealed under an annealing temperature ranging from 300 °C to 1300 °C for 30 mins to no more than 2 hours; attaching at least one said second substrate to surface of the at least one sapphire (Al 2 O 3) thin film of the at least one sapphire (Al 2 O 3) thin film coated substrate; at least one mechanical detachment process detaching the second substrate, the at least one sapphire (Al 2 O 3) thin film together with the at least one second thin film from the at least one first thin film coated substrate to form at least one second thin film coated sapphire (Al 2 O 3) thin film on said at least one second substrate; and at least one etching process removing the at least one second thin film from the at least one second thin film coated sapphire (Al 2 O 3) thin film on said at least one second substrate to form at least one sapphire (Al 2 O 3) thin film coated second substrate, wherein said first substrate comprises quartz, fused silica, silicon, glass, or toughen glass, and the second substrate comprises PET, polymers, plastics, paper or fabric and wherein said second substrate is not etch-able by the at least one etching process, wherein the at least one first thin film is not etch-able by the at least one etching process and the at least one second thin film is etch-able by the at least one etching process.