A method of fabricating a pixilated imager comprising the steps of: providing a substrate and forming a bottom electrode layer on the substrate; depositing or growing at least a lower semiconductor layer and an overlying upper semiconductor layer on the bottom electrode to form a p-n junction blanket layer overlying the bottom electrode layer; using a first masking step separating the upper semiconductor layer of the p-n junction blanket layer into an array of photodiodes with trenches isolating adjacent photodiodes in the array; planarizing the array of photodiodes with a dielectric material; using a second masking step forming a gate electrode (30a, 30b) defining a TFT adjacent each photodiode of the array of photodiodes, each of the gate electrodes (30a, 30b) overlying an isolating trench; depositing or growing a layer of gate dielectric on the photo diode array, and using a third masking step removing portions of the layer of gate dielectric to expose an upper surface of the upper semiconductor layer of each photodiode in the array of photodiodes; using a fourth masking step depositing or growing a layer of metal oxide semiconductor material that is transparent to sensing wavelengths of the sensing elements on the gate dielectric layer overlying the gate electrode (30a, 30b) of each TFT and the exposed upper surface of the upper semiconductor layer of each photodiode in the array of photodiodes; using a fifth masking step depositing a layer of etch stop material overlying the gate electrode (30a, 30b) of each TFT and the layer of metal oxide semiconductor material overlying the exposed upper surface of the upper semiconductor layer of each photodiode; and using a sixth masking step depositing a layer of source/drain metal on the layer of metal oxide semiconductor material of each TFT over an area surrounding the gate electrode and separating the layer of source/drain metal into electrodes (52/54) on opposite sides of the gate electrode (30a, 30b), the metal forming one of the source/drain electrodes (52/54) being in electrical contact with the metal oxide semiconductor material overlying the exposed upper surface of the upper semiconductor layer of the adjacent photodiode. providing a substrate and forming a bottom electrode layer on the substrate; depositing or growing at least a lower semiconductor layer and an overlying upper semiconductor layer on the bottom electrode to form a p-n junction blanket layer overlying the bottom electrode layer; using a first masking step separating the upper semiconductor layer of the p-n junction blanket layer into an array of photodiodes with trenches isolating adjacent photodiodes in the array; planarizing the array of photodiodes with a dielectric material; using a second masking step forming a gate electrode (30a, 30b) defining a TFT adjacent each photodiode of the array of photodiodes, each of the gate electrodes (30a, 30b) overlying an isolating trench; depositing or growing a layer of gate dielectric on the photo diode array, and using a third masking step removing portions of the layer of gate dielectric to expose an upper surface of the upper semiconductor layer of each photodiode in the array of photodiodes; using a fourth masking step depositing or growing a layer of metal oxide semiconductor material that is transparent to sensing wavelengths of the sensing elements on the gate dielectric layer overlying the gate electrode (30a, 30b) of each TFT and the exposed upper surface of the upper semiconductor layer of each photodiode in the array of photodiodes; using a fifth masking step depositing a layer of etch stop material overlying the gate electrode (30a, 30b) of each TFT and the layer of metal oxide semiconductor material overlying the exposed upper surface of the upper semiconductor layer of each photodiode; and using a sixth masking step depositing a layer of source/drain metal on the layer of metal oxide semiconductor material of each TFT over an area surrounding the gate electrode and separating the layer of source/drain metal into electrodes (52/54) on opposite sides of the gate electrode (30a, 30b), the metal forming one of the source/drain electrodes (52/54) being in electrical contact with the metal oxide semiconductor material overlying the exposed upper surface of the upper semiconductor layer of the adjacent photodiode.