A method of manufacturing a solar cell, the method comprising: - forming a tunneling layer over one surface of a semiconductor substrate; - forming a semiconductor layer over the tunneling layer; - forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer; - forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, - wherein the forming of the conductive area includes: - forming a mask layer over the semiconductor layer; - forming a doping opening having a shape corresponding to a shape of at least one of the first conductive area and the second conductive area in the mask layer by a laser etching using a laser, wherein the first conductive area and the second conductive area have an elongated shape so as to form stripes; and - performing doping using the doping opening; and - forming a back surface passivation film having contact portions (402, 404), for penetration of the first electrode and the second electrode, above the first conductive area and the second conductive area, - wherein a laser mark formed by the laser etching is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and - wherein the laser mark includes an outer mark spaced apart from each contact portion (402, 404), - wherein the outer mark takes a form of a line formed along each of opposite longitudinally extending edges of at least one of the first conductive area and the second conductive area, - wherein the outer mark is formed at an outer portion adjacent to longitudinally extending edges of at least one of the first conductive area and the second conductive area, and - wherein the laser mark further includes an inner mark formed at an inside portion of at least one of the first conductive area and the second conductive area other than the outer portion, - wherein the laser mark is used as an alignment mark when the contact portions (402, 404) are formed or when the first and second electrodes (42, 44) are formed or patterned. - forming a tunneling layer over one surface of a semiconductor substrate; - forming a semiconductor layer over the tunneling layer; - forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer; - forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, - wherein the forming of the conductive area includes: - forming a mask layer over the semiconductor layer; - forming a doping opening having a shape corresponding to a shape of at least one of the first conductive area and the second conductive area in the mask layer by a laser etching using a laser, wherein the first conductive area and the second conductive area have an elongated shape so as to form stripes; and - performing doping using the doping opening; and - forming a mask layer over the semiconductor layer; - forming a doping opening having a shape corresponding to a shape of at least one of the first conductive area and the second conductive area in the mask layer by a laser etching using a laser, wherein the first conductive area and the second conductive area have an elongated shape so as to form stripes; and - performing doping using the doping opening; and - forming a back surface passivation film having contact portions (402, 404), for penetration of the first electrode and the second electrode, above the first conductive area and the second conductive area, - wherein a laser mark formed by the laser etching is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and - wherein the laser mark includes an outer mark spaced apart from each contact portion (402, 404), - wherein the outer mark takes a form of a line formed along each of opposite longitudinally extending edges of at least one of the first conductive area and the second conductive area, - wherein the outer mark is formed at an outer portion adjacent to longitudinally extending edges of at least one of the first conductive area and the second conductive area, and - wherein the laser mark further includes an inner mark formed at an inside portion of at least one of the first conductive area and the second conductive area other than the outer portion, - wherein the laser mark is used as an alignment mark when the contact portions (402, 404) are formed or when the first and second electrodes (42, 44) are formed or patterned.