A power module comprising: a first power supply node and a second power supply node to supply mutually different reference potentials; a first coupling node to couple to an inductive load; a first field effect transistor coupled between the first power supply node and the first coupling node; a second field effect transistor coupled between the second power supply node and the first coupling node; a second coupling node different from the first coupling node to couple to the load; a third field effect transistor coupled between the first power supply node and the second coupling node; and a fourth field effect transistor coupled between the second power supply node and the second coupling node, wherein each of the field effect transistors includes a body diode, a controller to control ON/OFF each of the field effect transistors by pulse width control; and a differential amplifier to detect potential difference between the second coupling node and the first power supply node, wherein, in a first period, the controller is adapted to set the first field effect transistor and the fourth field effect transistor to an ON state and set the second field effect transistor and the third field effect transistor to an OFF state, wherein, in a second period following the first period, the controller is adapted to set the first field effect transistor to an ON state and set the second field effect transistor, the third field effect transistor, and the fourth field effect transistor to an OFF state, wherein, within the second period, the controller is adapted to detect potential difference between the second coupling node and the first power supply node by means of the differential amplifier, and wherein the second period is a dead time, and during the second period, a circulating current flows from the first power supply node through the first field effect transistor, the load and the body diode of the third field effect transistor and reaches the first power supply node again, and the detected potential difference depends on a junction temperature of the third field effect transistor. a first power supply node and a second power supply node to supply mutually different reference potentials; a first coupling node to couple to an inductive load; a first field effect transistor coupled between the first power supply node and the first coupling node; a second field effect transistor coupled between the second power supply node and the first coupling node; a second coupling node different from the first coupling node to couple to the load; a third field effect transistor coupled between the first power supply node and the second coupling node; and a fourth field effect transistor coupled between the second power supply node and the second coupling node, wherein each of the field effect transistors includes a body diode, a controller to control ON/OFF each of the field effect transistors by pulse width control; and a differential amplifier to detect potential difference between the second coupling node and the first power supply node, wherein, in a first period, the controller is adapted to set the first field effect transistor and the fourth field effect transistor to an ON state and set the second field effect transistor and the third field effect transistor to an OFF state, wherein, in a second period following the first period, the controller is adapted to set the first field effect transistor to an ON state and set the second field effect transistor, the third field effect transistor, and the fourth field effect transistor to an OFF state, wherein, within the second period, the controller is adapted to detect potential difference between the second coupling node and the first power supply node by means of the differential amplifier, and wherein the second period is a dead time, and during the second period, a circulating current flows from the first power supply node through the first field effect transistor, the load and the body diode of the third field effect transistor and reaches the first power supply node again, and the detected potential difference depends on a junction temperature of the third field effect transistor.