Light-emitting semiconductor chip for a lighting device having a carrier body and a semiconductor layer sequence comprising an active zone provided for light generation, wherein - the semiconductor chip includes a plurality of individually controllable emission regions (2, 2A, 2B, 2B') which are operable independently from each other, - the individually controllable emission regions (2, 2A, 2B, 2B') are arranged on the carrier body of the semiconductor chip, and - the emission regions have active zones formed in the same manner, wherein the semiconductor chip has one of the following additional features, that: A) the semiconductor layer sequence contains the emission regions (2, 2A, 2B, 2B') and is structured such that the active zone of the semiconductor layer sequence is severed to form the individual emission regions (2, 2A, 2B, 2B') and trenches are formed in the semiconductor layer sequence between the emission regions (2, 2A, 2B, 2B'); or B) the emission regions (2, 2A, 2B, 2B') comprise a common active zone which extends laterally through all the emission regions (2, 2A, 2B, 2B') so that the active zones of the emission regions (2, 2A, 2B, 2B') are of the same structure, wherein the individually controllable emission regions (2, 2A, 2B, 2B') are generated by structuring an electrical contact of the light-emitting semiconductor chip. - the semiconductor chip includes a plurality of individually controllable emission regions (2, 2A, 2B, 2B') which are operable independently from each other, - the individually controllable emission regions (2, 2A, 2B, 2B') are arranged on the carrier body of the semiconductor chip, and - the emission regions have active zones formed in the same manner, wherein the semiconductor chip has one of the following additional features, that: A) the semiconductor layer sequence contains the emission regions (2, 2A, 2B, 2B') and is structured such that the active zone of the semiconductor layer sequence is severed to form the individual emission regions (2, 2A, 2B, 2B') and trenches are formed in the semiconductor layer sequence between the emission regions (2, 2A, 2B, 2B'); or B) the emission regions (2, 2A, 2B, 2B') comprise a common active zone which extends laterally through all the emission regions (2, 2A, 2B, 2B') so that the active zones of the emission regions (2, 2A, 2B, 2B') are of the same structure, wherein the individually controllable emission regions (2, 2A, 2B, 2B') are generated by structuring an electrical contact of the light-emitting semiconductor chip. A) the semiconductor layer sequence contains the emission regions (2, 2A, 2B, 2B') and is structured such that the active zone of the semiconductor layer sequence is severed to form the individual emission regions (2, 2A, 2B, 2B') and trenches are formed in the semiconductor layer sequence between the emission regions (2, 2A, 2B, 2B'); or B) the emission regions (2, 2A, 2B, 2B') comprise a common active zone which extends laterally through all the emission regions (2, 2A, 2B, 2B') so that the active zones of the emission regions (2, 2A, 2B, 2B') are of the same structure, wherein the individually controllable emission regions (2, 2A, 2B, 2B') are generated by structuring an electrical contact of the light-emitting semiconductor chip.