mhurhangee/ep-ind-claims huggingface dataset:
A surface acoustic wave filter comprising: a surface acoustic wave filter section (201/202) comprising a piezoelectric substrate, at least three interdigital transducers (203-205/208-210) arranged in a direction of propagation of a surface acoustic wave on the piezoelectric substrate; and at least one surface acoustic wave resonator (221/222) connected in series between the surface acoustic wave filter section (201/202) and one of an input signal terminal (213/214,215) and an output signal terminal (214, 215/213) of the surface acoustic wave filter, wherein the surface acoustic wave filter section (201/202) is a threefold mode surface acoustic wave filter section of a longitudinally coupled resonator type, and the impedance of the surface acoustic wave filter section is capacitive in the highest-frequency resonance mode out of the three resonance modes, wherein the resonance frequency of the surface acoustic wave resonator (221/222) is positioned within the passband of the surface acoustic wave filter section (201/202), and the antiresonance frequency of the surface acoustic wave resonator is positioned outside of the passband of the surface acoustic wave filter section and in the vicinity of the high frequency region of the passband of the surface acoustic wave filter section, and wherein the surface acoustic wave resonator (221/222) is formed so that the frequency band between said resonance frequency and said antiresonance frequency substantially coincides with the frequency band of said highest-frequency resonance mode. a surface acoustic wave filter section (201/202) comprising a piezoelectric substrate, at least three interdigital transducers (203-205/208-210) arranged in a direction of propagation of a surface acoustic wave on the piezoelectric substrate; and at least one surface acoustic wave resonator (221/222) connected in series between the surface acoustic wave filter section (201/202) and one of an input signal terminal (213/214,215) and an output signal terminal (214, 215/213) of the surface acoustic wave filter, wherein the surface acoustic wave filter section (201/202) is a threefold mode surface acoustic wave filter section of a longitudinally coupled resonator type, and the impedance of the surface acoustic wave filter section is capacitive in the highest-frequency resonance mode out of the three resonance modes, wherein the resonance frequency of the surface acoustic wave resonator (221/222) is positioned within the passband of the surface acoustic wave filter section (201/202), and the antiresonance frequency of the surface acoustic wave resonator is positioned outside of the passband of the surface acoustic wave filter section and in the vicinity of the high frequency region of the passband of the surface acoustic wave filter section, and wherein the surface acoustic wave resonator (221/222) is formed so that the frequency band between said resonance frequency and said antiresonance frequency substantially coincides with the frequency band of said highest-frequency resonance mode.
Seal arrangement comprising a seal main body with at least one sealing lip, the sealing lip sealing with respect to the surroundings a sealed space which is at least partially filled with a lubricant, and the sealing lip running in a rubbing manner on a machine part, characterized in that the sealing lip has a closed space which is filled with lubricant and is arranged in the interior of the sealing lip, the said space being delimited by a wall region of the sealing lip, which wall region runs on the machine part, the thickness (d) of the wall region being between 0.1 mm and 2.0 mm, with the result that the lubricant which is situated in the space is released after wear of the wall region by way of the rubbing running of the sealing lip on the machine part.
An integrated circuit comprising: a switch comprising: a first gate; a first source/drain region at a top surface of a semiconductor substrate; and a second source/drain region (210 ") at the top surface of the semiconductor substrate, wherein the first source/drain region and the second source/drain region (210") are disposed on opposing sides of the first gate; wherein the first gate is coupled to a control circuit that is configured to select whether to pass an input signal to an output of the switch; wherein the first source/drain region is electrically coupled to the input signal by a first conductive line; wherein the second source/drain region (210") is electrically coupled to output signal by a second conductive line; wherein a third conductive line is disposed between the first conductive line and the second conductive line, characterized in that the third conductive line is electrically coupled to ground, and wherein the third conductive line is disconnected from the first gate. a first gate; a first source/drain region at a top surface of a semiconductor substrate; and a second source/drain region (210 ") at the top surface of the semiconductor substrate, wherein the first source/drain region and the second source/drain region (210") are disposed on opposing sides of the first gate; wherein the first gate is coupled to a control circuit that is configured to select whether to pass an input signal to an output of the switch; wherein the first source/drain region is electrically coupled to the input signal by a first conductive line; wherein the second source/drain region (210") is electrically coupled to output signal by a second conductive line; wherein a third conductive line is disposed between the first conductive line and the second conductive line, characterized in that the third conductive line is electrically coupled to ground, and wherein the third conductive line is disconnected from the first gate.
An imaging optical system that forms an image through an objective lens and an observation optical system and that is configured to be able to change the magnification of the image, wherein the observation optical system comprises a plurality of optical paths and ejects light from the objective lens from each of the plurality of optical paths, and each of the optical paths comprises a plurality of lens groups, characterised in that in at least one of the plurality of optical paths, each of at least two lens groups (CG1, CG2) among the plurality of lens groups moves in a direction including a component perpendicular to a reference optical axis of the observation optical system at at least part of a section where the magnification is changed from a high-power end state to a low-power end state, at least one of the lens groups (CG1, CG2) that move in the direction including the component perpendicular to the reference optical axis of the observation optical system is a first correction lens group adapted to move so that a position of light passing outermost from an optical axis of the objective lens moves toward the optical axis of the objective lens compared with a case of moving in a direction including only a component parallel to the reference optical axis, when the magnification is changed from the high-power end state to the low-power end state, and at least one of the remaining lens groups of the lens groups (CG1, CG2) that move in the direction including the component perpendicular to the reference optical axis of the observation optical system is a second correction lens group adapted to correct the optical paths changed by the first correction lens group.
A method for manufacturing a light emitting device, comprising: forming an n-type nitride semiconductor layer on a substrate; forming an active layer on the n-type nitride semiconductor layer; forming an AlN/GaN layer of a super lattice structure by alternately growing an AlN layer and a GaN layer on the active layer; and forming a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure, wherein the AlN layer is doped with a p-type dopant, wherein the forming of an AlN/GaN layer of a super lattice structure is performed in a reaction chamber, and comprises: (a) supplying source gases comprising a p-type dopant source gas, an N source gas, and an Al source gas into the reaction chamber to grow a p-type AlN layer doped with the p-type dopant on the active layer; (b) supplying NH 3 gas while stopping the growth of the p-type AlN layer by stopping the supply of the p-type dopant source gas and the Al source gas into the reaction chamber; (c) supplying NH 3 gas and a Ga source gas into the reaction chamber to grow a u-GaN layer on the p-type AlN layer; (d) supplying NH 3 gas while stopping the growth of the u-GaN layer by stopping the supply of the Ga source gas; and repeating (a) to (d) until the AlN/GaN layer of the super lattice structure is formed on the active layer. forming an n-type nitride semiconductor layer on a substrate; forming an active layer on the n-type nitride semiconductor layer; forming an AlN/GaN layer of a super lattice structure by alternately growing an AlN layer and a GaN layer on the active layer; and forming a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure, wherein the AlN layer is doped with a p-type dopant, (a) supplying source gases comprising a p-type dopant source gas, an N source gas, and an Al source gas into the reaction chamber to grow a p-type AlN layer doped with the p-type dopant on the active layer; (b) supplying NH 3 gas while stopping the growth of the p-type AlN layer by stopping the supply of the p-type dopant source gas and the Al source gas into the reaction chamber; (c) supplying NH 3 gas and a Ga source gas into the reaction chamber to grow a u-GaN layer on the p-type AlN layer; (d) supplying NH 3 gas while stopping the growth of the u-GaN layer by stopping the supply of the Ga source gas; and
A method performed by a terminal in a wireless communication system, the method comprising: identifying that the terminal is in a radio resource control, RRC, inactive state; transmitting, to a base station, a first message for switching the RRC inactive state to a RRC connected state over a signaling radio bearer, SRBO, wherein the first message comprises resume cause information indicating a resume cause for switching of the RRC inactive state to the RRC connected state; receiving, from the base station, a second message to switch the RRC inactive state to the RRC connected state over a SRB1 in case that a terminal context is retrieved, as a response to the first message; and receiving, from the base station, a third message over the SRB0 in case that the terminal context is not retrieved, as a response to the first message, the third message is for performing a RRC setup procedure. identifying that the terminal is in a radio resource control, RRC, inactive state; transmitting, to a base station, a first message for switching the RRC inactive state to a RRC connected state over a signaling radio bearer, SRBO, wherein the first message comprises resume cause information indicating a resume cause for switching of the RRC inactive state to the RRC connected state; receiving, from the base station, a second message to switch the RRC inactive state to the RRC connected state over a SRB1 in case that a terminal context is retrieved, as a response to the first message; and receiving, from the base station, a third message over the SRB0 in case that the terminal context is not retrieved, as a response to the first message, the third message is for performing a RRC setup procedure.
A method for preparation of a cell culture medium, comprising the steps of: preparation of an aqueous cell culture medium solution; and bottom spray granulation; and characterized in that the bottom spray granulation is performed with only the aqueous cell culture medium solution without adding separate seed or coagulant. preparation of an aqueous cell culture medium solution; and bottom spray granulation; and characterized in that the bottom spray granulation is performed with only the aqueous cell culture medium solution without adding separate seed or coagulant.
A hybrid composite part, for example an aircraft part, the hybrid composite part comprising: a tool; and fiber reinforced material that surrounds the tool and is co-bonded with the tool, wherein the tool surrounds a void, and wherein the tool includes cut-outs that are distributed along its length and wherein the cut-outs increase an amount of flexibility of the tool. a tool; and fiber reinforced material that surrounds the tool and is co-bonded with the tool, wherein the tool surrounds a void, and wherein the tool includes cut-outs that are distributed along its length and wherein the cut-outs increase an amount of flexibility of the tool.
A security context obtaining system, wherein the system comprises a first access and mobility management function, AMF, and a second AMF; the first AMF is configured to: receive a first registration request message from user equipment UE after the UE is handed over from a 4G communications system to a 5G communications system; validate integrity of the first registration request message; and if successfully validating the integrity of the first registration request message, send a second request message to the second AMF; and the second AMF is configured to: receive the second request message; and if the second request message carries indication information and the indication information indicates that the UE is validated, send a native 5G security context of the UE to the first AMF. the first AMF is configured to: receive a first registration request message from user equipment UE after the UE is handed over from a 4G communications system to a 5G communications system; validate integrity of the first registration request message; and if successfully validating the integrity of the first registration request message, send a second request message to the second AMF; and the second AMF is configured to: receive the second request message; and if the second request message carries indication information and the indication information indicates that the UE is validated, send a native 5G security context of the UE to the first AMF.
Key with a first part and a second part, wherein both parts (4, 2) have a securing opening (6, 8) each and wherein in the assembled state of the key a securing pin is inserted in the securing openings (6, 8) which are aligned relative to one another and form a securing pair, so that both parts (4, 2) are connected in a form-locking manner by means of the securing pin, characterized in that the first part has a securing opening embodied as a through-hole (6.1) and the second part as has a securing opening embodied as a blind hole or both parts (4, 2) have a securing opening (6.2,8) embodied as an off-set groove, wherein in the assembled state of the key the two off-set grooves (6.2, 8) together form a blind hole.
A tool for the intracorporeal implantation of a medical device, the tool having a steerable catheter ncluding a flexible tubular unit comprising a mobile tube (42, 44) and an intermediate tube, wherein the intermediate tube is received inside the intermediate tube, wherein the mobile tube and the intermediate tube are coaxial to each other, extend from a proximal end to a distal end of the steerable catheter and are telescopically mounted into each other with a possibility of mutual rotation and mutual axial translation, wherein the mobile tube comprises at least one central lumen located radially in a central region near an axis of the steerable catheter and extending axially from the proximal end to the distal end, wherein the intermediate tube comprises along its whole length a longitudinal notch radially offset in a direction of offset with respect to the axis of the steerable catheter and extending axially from the proximal end to the distal end, the tool further comprises a cable, wherein the longitudinal notch contains the cable, the cable being adapted to undergo a traction exerted from the proximal end, the traction generating a bending of the steerable catheter directed towards the offset direction, and wherein the steerable catheter further comprises around the intermediate tube a sealed external sheath surrounding the intermediate tube over its periphery and covering the longitudinal notch over its length
A phase shift transformer assembly configured to supply three phase voltage to a plurality of unit power cells in a medium voltage inverter system, comprising: a first winding which is configured to surround the outside of a core and to which three phase high voltage is applied; a plurality of second windings which are configured to surround the outside of the core and convert high voltage applied thereto from the first winding to low voltage; a tank providing an internal space in which the core, the first winding and the plurality of second windings are arranged and containing insulating oil therein; a cover provided on the top of the tank to provide a sealed internal space along with the tank; a first bushing arranged by the side of the tank and connected to the first winding to apply high voltage; a plurality of second bushings arranged on the top of the cover and connected to each of the plurality of second windings to output low voltage; radiators (40, 45) arranged on the front and back surfaces of the tank to cool the insulating oil or the first winding and the second windings; an oil conservator on one side of the cover and disposed on the top of the tank and connected to the tank; and characterised in that the assembly further comprises a housing in which the plurality of second bushings are arranged, wherein a top cover of housing is capable of being opened and closed, and in that the plurality of second bushings are adapted to supply the three phase low voltage to the plurality of unit power cells, wherein three outputs of the plurality of second bushings are configured to connect to the unit power cells. a first winding which is configured to surround the outside of a core and to which three phase high voltage is applied; a plurality of second windings which are configured to surround the outside of the core and convert high voltage applied thereto from the first winding to low voltage; a tank providing an internal space in which the core, the first winding and the plurality of second windings are arranged and containing insulating oil therein; a cover provided on the top of the tank to provide a sealed internal space along with the tank; a first bushing arranged by the side of the tank and connected to the first winding to apply high voltage; a plurality of second bushings arranged on the top of the cover and connected to each of the plurality of second windings to output low voltage; radiators (40, 45) arranged on the front and back surfaces of the tank to cool the insulating oil or the first winding and the second windings; an oil conservator on one side of the cover and disposed on the top of the tank and connected to the tank; and characterised in that the assembly further comprises a housing in which the plurality of second bushings are arranged, wherein a top cover of housing is capable of being opened and closed, and in that the plurality of second bushings are adapted to supply the three phase low voltage to the plurality of unit power cells, wherein three outputs of the plurality of second bushings are configured to connect to the unit power cells.
A computer implemented method of determining a predicted response of a subject to a TNF inhibitor, comprising: calculating a predicted response value from a sample in a subject prior to administration of a TNF inhibitor to the subject, wherein the predicted response value is determined by: (a) an amount of an mRNA sequence corresponding to SEQ ID NO:1 (SPTYD1), present in the sample; and (b) an amount of an mRNA sequence comprising SEQ ID NO:2 (C1orf105), present in the sample; wherein a response value r below 0 indicates that the subject will not respond, and a response value r greater or equal to 0 indicates that a subject will respond, wherein when normalized, the predicted response value is substantially equivalent to the final r calculated in the sequence of operations below: r 02 = ADD r 05, r 02 r 00 = ADD r 06, r 01 r 00 = DIV r 02, r 00 r 01 = SIN r 06 r 00 = SUB r 00, r 01 r 02 = MOD r 01. r 00 r 03 = MOD r 04, r 00 r 00 = SIN r 00 r 00 = ADD r 02, r 00 r 03 = MUL r 03, r 03 r 02 = ADD r 06, r 03 r 03 = DIV r 03, r 02 r 00 = ADD r 03, r 00 r 00 = ADD r 03, r 00 wherein: r is a normalized value of (a); r is a normalized value of (b), r is equal to 5; r is equal to 2; and r is equal to 1. calculating a predicted response value from a sample in a subject prior to administration of a TNF inhibitor to the subject, wherein the predicted response value is determined by: (a) an amount of an mRNA sequence corresponding to SEQ ID NO:1 (SPTYD1), present in the sample; and (b) an amount of an mRNA sequence comprising SEQ ID NO:2 (C1orf105), present in the sample; wherein a response value r below 0 indicates that the subject will not respond, and a response value r greater or equal to 0 indicates that a subject will respond, wherein when normalized, the predicted response value is substantially equivalent to the final r calculated in the sequence of operations below: r 02 = ADD r 05, r 02 r 00 = ADD r 06, r 01 r 00 = DIV r 02, r 00 r 01 = SIN r 06 r 00 = SUB r 00, r 01 r 02 = MOD r 01. r 00 r 03 = MOD r 04, r 00 r 00 = SIN r 00 r 00 = ADD r 02, r 00 r 03 = MUL r 03, r 03 r 02 = ADD r 06, r 03 r 03 = DIV r 03, r 02 r 00 = ADD r 03, r 00 r 00 = ADD r 03, r 00 wherein: r is a normalized value of (a); r is a normalized value of (b), r is equal to 5; r is equal to 2; and r is equal to 1. r is a normalized value of (a); r is a normalized value of (b), r is equal to 5; r is equal to 2; and r is equal to 1.
Method for operating a rail vehicle which is suitable for battery operation and comprises an intermediate circuit and a battery, wherein it has means for providing an intermediate circuit voltage and means for lowering and raising the intermediate circuit voltage between a first and a second voltage level, wherein the second voltage level corresponds to the battery voltage and the rail vehicle is started up with battery operation, wherein the intermediate circuit voltage is kept at the second voltage level, characterized in that the second voltage level is lower than the first voltage level, and, as the speed of the rail vehicle increases, the intermediate circuit voltage is raised in a linear manner or in line with another function from the second voltage level to the first voltage level, which first voltage level it reaches at a prespecified speed of the rail vehicle.
A three-dimensional measuring device for use in a garment fitting room comprising at least one image capturing means, a projector, and a wavelength specific mirror characterized in that said image capturing means is positioned behind said wavelength specific mirror, and characterized in that said wavelength specific mirror is configured to transmit at least 70% of infrared light with wavelengths of at least 750 nm and to reflect at least 70% of visible light wavelengths from about 380 nm to about 740 nm.