A method of forming a metal wiring by using a transfer substrate for transferring a metal wiring material to a transfer-receiving object, comprising: forming the transfer substrate consisting of: a substrate formed of glass, resin-reinforced glass, silicon, or Kovar; at least one metal wiring material formed on the substrate, the metal wiring material being porous; and an underlying metal film formed between the substrate and the metal wiring material and having a thickness of 1 nm or more, wherein the underlying metal film is composed of any metal of gold, silver, platinum, palladium, ruthenium, rhodium, iridium, chromium, titanium, tungsten, tantalum, nickel, copper and zirconium, or an alloy thereof, the forming the transfer substrate including forming the underlying metal film on the substrate by a sputtering method, a plating method or a CVD method and preparing the metal wiring material as a molded article through applying a metal paste composed of gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm, an organic solvent and optionally at least one resin selected from an acrylic resin, a cellulose resin and an alkyd resin on the underlying metal film, the at least one resin being used to prevent the metal powder in the metal paste from coagulating and to make the metal paste more homogeneous, and subsequently drying and sintering the metal paste at a sintering temperature of 80 to 300°C without applying pressure so as to create a close point contact state between the metal particles and between the surface of the underlying metal film and the metal particles, thus settling the shape of the metal wiring, forming an electrode film on a semiconductor wafer being the transfer-receiving object, wherein the electrode film is a single layer or a multilayer and the outermost surface of the electrode film is composed of gold, and superimposing the transfer substrate on the transfer-receiving object, with the transfer substrate opposed to the transfer-receiving object, and while heating the transfer substrate at 80 to 200 °C and the transfer-receiving object at 80 to 300 °C, pressing the transfer substrate with pressure of 0.1 to 1.5 times the yield strength of the metal wiring material, thereby bonding and transferring the metal wiring material to the electrode film of the transfer-receiving object in a state of point contact with the electrode film surface during the transfer, and subsequently simultaneously removing the substrate and the underlying metal film of the transfer substrate. forming the transfer substrate consisting of: a substrate formed of glass, resin-reinforced glass, silicon, or Kovar; at least one metal wiring material formed on the substrate, the metal wiring material being porous; and an underlying metal film formed between the substrate and the metal wiring material and having a thickness of 1 nm or more, wherein the underlying metal film is composed of any metal of gold, silver, platinum, palladium, ruthenium, rhodium, iridium, chromium, titanium, tungsten, tantalum, nickel, copper and zirconium, or an alloy thereof, the forming the transfer substrate including forming the underlying metal film on the substrate by a sputtering method, a plating method or a CVD method and preparing the metal wiring material as a molded article through applying a metal paste composed of gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm, an organic solvent and optionally at least one resin selected from an acrylic resin, a cellulose resin and an alkyd resin on the underlying metal film, the at least one resin being used to prevent the metal powder in the metal paste from coagulating and to make the metal paste more homogeneous, and subsequently drying and sintering the metal paste at a sintering temperature of 80 to 300°C without applying pressure so as to create a close point contact state between the metal particles and between the surface of the underlying metal film and the metal particles, thus settling the shape of the metal wiring, forming an electrode film on a semiconductor wafer being the transfer-receiving object, wherein the electrode film is a single layer or a multilayer and the outermost surface of the electrode film is composed of gold, and superimposing the transfer substrate on the transfer-receiving object, with the transfer substrate opposed to the transfer-receiving object, and while heating the transfer substrate at 80 to 200 °C and the transfer-receiving object at 80 to 300 °C, pressing the transfer substrate with pressure of 0.1 to 1.5 times the yield strength of the metal wiring material, thereby bonding and transferring the metal wiring material to the electrode film of the transfer-receiving object in a state of point contact with the electrode film surface during the transfer, and subsequently simultaneously removing the substrate and the underlying metal film of the transfer substrate.