A method of forming an out-of-plane electrode (124, 290, 478) comprising: providing an oxide layer (108, 222, 308, 358) above an upper surface of a device layer (106, 206, 306, 356); providing a first cap layer portion (228, 310, 362) above an upper surface of the oxide layer (108, 222, 308, 358); etching a first electrode perimeter defining trench (232, 370, 372) extending through the first cap layer portion (228, 310, 362) and stopping at the oxide layer (108, 222, 308, 358); depositing a first insulating material portion (130, 262, 382, 384) within the first electrode perimeter defining trench (232, 370, 372), wherein the first insulating material portion (130, 262, 382, 384) consists of silicon nitride; depositing a second cap layer portion (270, 410) above the deposited first insulating material portion (130, 262, 382, 384); etching vent holes (122, 274, 330, 414) through the first cap layer portion (228, 310, 362) and the second cap layer portion (270, 410), vapor releasing a portion of the oxide layer (108, 222, 308, 358) through the vent holes (122, 274, 330, 414); depositing a third cap layer portion above the second cap layer portion (270, 410); etching a second electrode perimeter defining trench (280, 420) extending through the second cap layer portion (270, 410) and the third cap layer portion; and depositing a second insulating material portion within the second electrode perimeter defining trench (280, 420), such that a spacer (126, 128) including the first insulating material portion (130, 262, 382, 384) and the second insulating material portion define a perimeter of an out-of-plane electrode (124, 290, 478). providing an oxide layer (108, 222, 308, 358) above an upper surface of a device layer (106, 206, 306, 356); providing a first cap layer portion (228, 310, 362) above an upper surface of the oxide layer (108, 222, 308, 358); etching a first electrode perimeter defining trench (232, 370, 372) extending through the first cap layer portion (228, 310, 362) and stopping at the oxide layer (108, 222, 308, 358); depositing a first insulating material portion (130, 262, 382, 384) within the first electrode perimeter defining trench (232, 370, 372), wherein the first insulating material portion (130, 262, 382, 384) consists of silicon nitride; depositing a second cap layer portion (270, 410) above the deposited first insulating material portion (130, 262, 382, 384); etching vent holes (122, 274, 330, 414) through the first cap layer portion (228, 310, 362) and the second cap layer portion (270, 410), vapor releasing a portion of the oxide layer (108, 222, 308, 358) through the vent holes (122, 274, 330, 414); depositing a third cap layer portion above the second cap layer portion (270, 410); etching a second electrode perimeter defining trench (280, 420) extending through the second cap layer portion (270, 410) and the third cap layer portion; and depositing a second insulating material portion within the second electrode perimeter defining trench (280, 420), such that a spacer (126, 128) including the first insulating material portion (130, 262, 382, 384) and the second insulating material portion define a perimeter of an out-of-plane electrode (124, 290, 478).