Sensor device comprising a semiconductor substrate with a first type of electrical conductivity and a photodiode structure for detecting incident ultraviolet, UV, radiation, the photodiode structure comprising - a first well arranged within the semiconductor substrate and having a second type of electrical conductivity; - a second well arranged at least partially within the first well and having the first type of electrical conductivity, wherein a doping concentration of the first well within a surface region at a main surface of the semiconductor substrate is greater than a doping concentration of the second well within the surface region, thereby forming at the main surface a photon capturing layer having the second type of electrical conductivity, wherein the photon capturing layer is laterally separated into at least two capturing portions (CP1, CP2); - a p-n junction for detecting the incident UV radiation formed by a boundary between the second well and the photon capturing layer; - a filter arranged above the photon capturing layer, wherein a transmission characteristic of the filter emulates a specified erythema action spectrum; - an attenuation layer arranged on or above the main surface and configured to pass visible and infrared radiation at least partially and to block or attenuate UV radiation; - a first sense terminal connected to the at least one first capturing portion for measuring a first channel signal depending on a photocurrent generated by UV radiation incident on the at least one first capturing portion; - a second sense terminal connected to the at least one second capturing portion for measuring a second channel signal depending on a photocurrent generated by UV radiation incident on the at least one second capturing portion; and - a processing unit connected to the first sense terminal and the second sense terminal and configured to determine a characteristic of the incident light depending on a difference between a signal depending on the first channel signal and a signal depending on the second channel signal; wherein - at least one first capturing portion of the at least two capturing portions (CP1, CP2) is not covered by the attenuation layer; and - at least one second capturing portion of the at least two capturing portions (CP1, CP2) is covered by the attenuation layer. - a first well arranged within the semiconductor substrate and having a second type of electrical conductivity; - a second well arranged at least partially within the first well and having the first type of electrical conductivity, wherein a doping concentration of the first well within a surface region at a main surface of the semiconductor substrate is greater than a doping concentration of the second well within the surface region, thereby forming at the main surface a photon capturing layer having the second type of electrical conductivity, wherein the photon capturing layer is laterally separated into at least two capturing portions (CP1, CP2); - a p-n junction for detecting the incident UV radiation formed by a boundary between the second well and the photon capturing layer; - a filter arranged above the photon capturing layer, wherein a transmission characteristic of the filter emulates a specified erythema action spectrum; - an attenuation layer arranged on or above the main surface and configured to pass visible and infrared radiation at least partially and to block or attenuate UV radiation; - a first sense terminal connected to the at least one first capturing portion for measuring a first channel signal depending on a photocurrent generated by UV radiation incident on the at least one first capturing portion; - a second sense terminal connected to the at least one second capturing portion for measuring a second channel signal depending on a photocurrent generated by UV radiation incident on the at least one second capturing portion; and - a processing unit connected to the first sense terminal and the second sense terminal and configured to determine a characteristic of the incident light depending on a difference between a signal depending on the first channel signal and a signal depending on the second channel signal; wherein - at least one first capturing portion of the at least two capturing portions (CP1, CP2) is not covered by the attenuation layer; and - at least one second capturing portion of the at least two capturing portions (CP1, CP2) is covered by the attenuation layer.