A method for bonding of a first contact area of a first optically transparent substrate to a second contact area of a second optically transparent substrate, on at least one of the contact areas (3, 4) an oxide being used for bonding, from which an optically transparent interconnection layer is formed with: - an electrical conductivity of at least 10e 1 S/cm 2 (measurement: four point method, relative to temperature of 300K) and - an optical transmittance greater than 0.8 (for the whole wavelength range from 400 nm to 1500 nm) on the first and second contact area (3, 4), with the following steps: - Application of a first oxid layer with the aforementioned electrical conductivity and the aforementioned optical txansmittance to the first substrate, - Application of a second oxid layer to the second substrate, - Application of a third oxid layer to the second oxid layer, the third oxide layer having an oxygen volume S 1 which is smaller than 70% of the maximum oxygen volume S max of the third oxide layer, which would be contained in the third layer if the entire volume were completely oxidized, - Application of a fourth oxid layer to the third oxid layer, - Plasma activating of the first substrate to produce a reservoir for holding a first educt in the first substrate, - Bonding of the substrates (1, 2) at room temperature, wherein during a subsequent annealing process the first educt intercalated in the reservoir diffuses through the fourth oxide layer and oxidizes the third oxide layer. - an electrical conductivity of at least 10e 1 S/cm 2 (measurement: four point method, relative to temperature of 300K) and - an optical transmittance greater than 0.8 (for the whole wavelength range from 400 nm to 1500 nm) on the first and second contact area (3, 4), with the following steps: - Application of a first oxid layer with the aforementioned electrical conductivity and the aforementioned optical txansmittance to the first substrate, - Application of a second oxid layer to the second substrate, - Application of a third oxid layer to the second oxid layer, the third oxide layer having an oxygen volume S 1 which is smaller than 70% of the maximum oxygen volume S max of the third oxide layer, which would be contained in the third layer if the entire volume were completely oxidized, - Application of a fourth oxid layer to the third oxid layer, - Plasma activating of the first substrate to produce a reservoir for holding a first educt in the first substrate, - Bonding of the substrates (1, 2) at room temperature, wherein during a subsequent annealing process the first educt intercalated in the reservoir diffuses through the fourth oxide layer and oxidizes the third oxide layer. - Application of a first oxid layer with the aforementioned electrical conductivity and the aforementioned optical txansmittance to the first substrate, - Application of a second oxid layer to the second substrate, - Application of a third oxid layer to the second oxid layer, the third oxide layer having an oxygen volume S 1 which is smaller than 70% of the maximum oxygen volume S max of the third oxide layer, which would be contained in the third layer if the entire volume were completely oxidized, - Application of a fourth oxid layer to the third oxid layer, - Plasma activating of the first substrate to produce a reservoir for holding a first educt in the first substrate, - Bonding of the substrates (1, 2) at room temperature, wherein during a subsequent annealing process the first educt intercalated in the reservoir diffuses through the fourth oxide layer and oxidizes the third oxide layer.