mhurhangee/ep-ind-claims huggingface dataset:
A method of manufacturing an oxide thin film consisting of a plurality of oxide layers, comprising: applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, heat-treating the oxide precursor solution to form an oxide layer (120b1, 120b2, 120c, 120d), and repeating the steps and to form said plurality of oxide layers including the same oxide; wherein the thickness of the oxide layer is from 10Å to 500Å. applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, heat-treating the oxide precursor solution to form an oxide layer (120b1, 120b2, 120c, 120d), and repeating the steps and to form said plurality of oxide layers including the same oxide; wherein the thickness of the oxide layer is from 10Å to 500Å.
Hydraulic section for actuating a vehicle clutch having a master cylinder, a slave cylinder and a hydraulic line which connects both cylinders and is divided by a bleeding device into two line sections, characterized in that said line sections of the hydraulic line which act as siphon and riser are guided together, spaced apart from one another, in a space which is formed from at least one of these ends to said bleeding device.
An electrical connector system comprising: - a distributor plug comprising a housing accommodating a first set of electrical connectors in a selector outlet, said electrical connectors comprising: i. a connector configured to connect to protective earth; ii. three connectors, each configured to connect to a neutral (N1, N2, or N3), and iii. three connectors, each configured to connect to a phase (L1, L2 or L3) of the three-phase power supply system; and - at least one selector part movably arranged in the selector outlet of the distributor plug, characterized in that the selector part allows for selecting a subset of the connectors of the distributor plug, said subset comprising a specific pair of phase and neutral (e.g. L1 and N1), wherein said selection may be performed by moving the selector part in the selector outlet. - a distributor plug comprising a housing accommodating a first set of electrical connectors in a selector outlet, said electrical connectors comprising: i. a connector configured to connect to protective earth; ii. three connectors, each configured to connect to a neutral (N1, N2, or N3), and iii. three connectors, each configured to connect to a phase (L1, L2 or L3) of the three-phase power supply system; and i. a connector configured to connect to protective earth; ii. three connectors, each configured to connect to a neutral (N1, N2, or N3), and iii. three connectors, each configured to connect to a phase (L1, L2 or L3) of the three-phase power supply system; and - at least one selector part movably arranged in the selector outlet of the distributor plug,
A method for manufacturing a kink-resistant tube having holes, comprising: coating a wire (14,18,22) with a plastic material; winding the coated wire (14,18,22) around a mandrel forming a plurality of windings; heating the wound coated wire (14,18,22) until the plastic material of the wire melts and bonds the windings forming a wire-reinforced sheath having wire-containing sections and non-wire containing sections; identifying at least one non-wire containing section; characterised by forming at least one hole in the non-wire containing section; and by using light transmission through the wire-reinforced sheath to identify the non-wire containing sections. coating a wire (14,18,22) with a plastic material; winding the coated wire (14,18,22) around a mandrel forming a plurality of windings; heating the wound coated wire (14,18,22) until the plastic material of the wire melts and bonds the windings forming a wire-reinforced sheath having wire-containing sections and non-wire containing sections; identifying at least one non-wire containing section; characterised by forming at least one hole in the non-wire containing section; and by using light transmission through the wire-reinforced sheath to identify the non-wire containing sections.
An overdenture bar that, in use, can be fitted on dental implants implanted in a patient's jawbone and supports a denture comprising a plurality of replacement teeth, said overdenture bar comprising: a U-shaped support beam, comprising an anterior region and a pair of posterior extensions, configured to being attached to a plurality of dental implants and extending generally above the mucus membrane, wherein the U-shaped support beam includes one or more protrusions extending from an upper surface of the U-shaped support beam, wherein said protrusions are configured to generally align with areas of the denture that correspond to tooth structures; retention elements extending in a substantially normal direction from the outer surface of the U-shaped support beam in a plurality of directions configured to retain a denture material on the overdenture bar; and wherein the cross-section of said U-shaped support beam comprises arced or curved bottom edges on both the buccal and lingual sides of the bar. a U-shaped support beam, comprising an anterior region and a pair of posterior extensions, configured to being attached to a plurality of dental implants and extending generally above the mucus membrane, wherein the U-shaped support beam includes one or more protrusions extending from an upper surface of the U-shaped support beam, wherein said protrusions are configured to generally align with areas of the denture that correspond to tooth structures; retention elements extending in a substantially normal direction from the outer surface of the U-shaped support beam in a plurality of directions configured to retain a denture material on the overdenture bar; and one or more protrusions extending from an upper surface of the U-shaped support beam, wherein said protrusions are configured to generally align with areas of the denture that correspond to tooth structures; retention elements extending in a substantially normal direction from the outer surface of the U-shaped support beam in a plurality of directions configured to retain a denture material on the overdenture bar; and wherein the cross-section of said U-shaped support beam comprises arced or curved bottom edges on both the buccal and lingual sides of the bar.
Submarine cable link comprising a submarine cable coupling sleeve for connecting two ends (11, 12) of two submarine cable sections (13, 14) of a submarine cable, wherein a or each partial discharge in the submarine cable coupling sleeve is measurable by two capacitive sensors (15, 16) upstream and downstream of the two sides of the submarine cable coupling sleeve, wherein a measuring device of the submarine cable link is configured to determine a position of the respective partial discharge in the submarine cable coupling sleeve on the basis of electrical signals of the sensors (15, 16), wherein the sensors (15, 16) upstream and downstream of the submarine cable coupling sleeve are secured to the two submarine cable sections (13, 14) and wherein the two capacitive sensors (15, 16) are separated from the submarine cable sections (13, 14) by a dielectric and are enclosed by a protective sheath, and the submarine cable link is assigned at least one signal transducer (20, 21) which enables the electrical signals of the capacitive sensors (15, 16) to be converted into optical signals.
A magnetoresistive stack comprising: an electrically conductive material of an electrode or a via; a seed region disposed above, and in direct contact with, the electrically conductive material, wherein the seed region has a thickness greater than or equal to 40 Angstroms, and includes an alloy comprising nickel and chromium, wherein the alloy comprises 25-60% chromium by atomic percent; a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes: a first ferromagnetic structure disposed above the seed region and in contact with the seed region, wherein the first ferromagnetic structure includes a first layer of nickel disposed on and in direct contact with the seed region; a coupling layer in contact with the first ferromagnetic structure; a second ferromagnetic structure in contact with the coupling layer; and a high-iron alloy interface region disposed above the second ferromagnetic structure, wherein the high-iron alloy interface region includes at least 50% iron by atomic percent; a dielectric layer disposed above, and in direct contact with, the high-iron alloy interface region; and a free magnetic region disposed above the dielectric layer. an electrically conductive material of an electrode or a via; a seed region disposed above, and in direct contact with, the electrically conductive material, wherein the seed region has a thickness greater than or equal to 40 Angstroms, and includes an alloy comprising nickel and chromium, wherein the alloy comprises 25-60% chromium by atomic percent; a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes: a first ferromagnetic structure disposed above the seed region and in contact with the seed region, wherein the first ferromagnetic structure includes a first layer of nickel disposed on and in direct contact with the seed region; a coupling layer in contact with the first ferromagnetic structure; a second ferromagnetic structure in contact with the coupling layer; and a high-iron alloy interface region disposed above the second ferromagnetic structure, wherein the high-iron alloy interface region includes at least 50% iron by atomic percent; a first ferromagnetic structure disposed above the seed region and in contact with the seed region, wherein the first ferromagnetic structure includes a first layer of nickel disposed on and in direct contact with the seed region; a coupling layer in contact with the first ferromagnetic structure; a second ferromagnetic structure in contact with the coupling layer; and a high-iron alloy interface region disposed above the second ferromagnetic structure, wherein the high-iron alloy interface region includes at least 50% iron by atomic percent; a dielectric layer disposed above, and in direct contact with, the high-iron alloy interface region; and a free magnetic region disposed above the dielectric layer.
A method for preparing a vinyl chloride-based polymer, the method comprising: a step for performing suspension polymerization of a monomer for preparing a vinyl chloride-based polymer in the presence of a polymerization initiator, a dispersant, and water soluble cellulose ether, wherein the dispersant includes a mixture of two or more kinds of polyvinyl alcohol having different degrees of saponification, and a mole average degree of saponification of the polyvinyl alcohol mixture is from 76 mol% to 80 mol%, and wherein the water soluble cellulose ether has a gel point of 60°C to 90°C, and is added before the initiation of the polymerization or at a time in which the polymerization conversion rate is 70% or less, wherein the water soluble cellulose ether has a hydrophobic group in an amount of 20 to 40 wt% based on the total weight of the water soluble cellulose ether, and wherein the dispersant includes a first polyvinyl alcohol having a degree of saponification of 60 mol% to 90 mol% and a second polyvinyl alcohol having a degree of saponification of 40 mol% to less than 60 mol% at a weight ratio of 10:1 to 20:1. a step for performing suspension polymerization of a monomer for preparing a vinyl chloride-based polymer in the presence of a polymerization initiator, a dispersant, and water soluble cellulose ether, wherein the dispersant includes a mixture of two or more kinds of polyvinyl alcohol having different degrees of saponification, and a mole average degree of saponification of the polyvinyl alcohol mixture is from 76 mol% to 80 mol%, and wherein the water soluble cellulose ether has a gel point of 60°C to 90°C, and is added before the initiation of the polymerization or at a time in which the polymerization conversion rate is 70% or less, wherein the water soluble cellulose ether has a hydrophobic group in an amount of 20 to 40 wt% based on the total weight of the water soluble cellulose ether, and wherein the dispersant includes a first polyvinyl alcohol having a degree of saponification of 60 mol% to 90 mol% and a second polyvinyl alcohol having a degree of saponification of 40 mol% to less than 60 mol% at a weight ratio of 10:1 to 20:1.
A communication apparatus, comprising: circuitry which, in operation, generates a random access control signal including a plurality of per station, STA information, each of the plurality of per STA information including an identifier, ID, field, the ID field indicating at least one resource unit available for a corresponding terminal station; and a transmitter, which, in operation, transmits the random access control signal, wherein one of a plurality of Association IDs, AIDs, for scheduled access or one of a plurality of IDs for random access is assigned to the ID field, and wherein values for the plurality of IDs for random access are different from any of values of the plurality of AIDs for scheduled access, characterized in that each of the values of the plurality of IDs for random access is uniquely associated with a state of communication between the communication apparatus and the corresponding terminal station. circuitry which, in operation, generates a random access control signal including a plurality of per station, STA information, each of the plurality of per STA information including an identifier, ID, field, the ID field indicating at least one resource unit available for a corresponding terminal station; and a transmitter, which, in operation, transmits the random access control signal, wherein one of a plurality of Association IDs, AIDs, for scheduled access or one of a plurality of IDs for random access is assigned to the ID field, and wherein values for the plurality of IDs for random access are different from any of values of the plurality of AIDs for scheduled access,
A sensor package, comprising: - a carrier including electric conductors, - an ASIC device, and - a sensor element, characterized in that - the sensor element is integrated in the ASIC device, - a dummy die or interposer is arranged between the carrier and the ASIC device and is fastened to the carrier, and - the ASIC device is fastened to the dummy die or interposer and laterally overhangs the dummy die or interposer by at least 100 μm. - a carrier including electric conductors, - an ASIC device, and - a sensor element, - the sensor element is integrated in the ASIC device, - a dummy die or interposer is arranged between the carrier and the ASIC device and is fastened to the carrier, and - the ASIC device is fastened to the dummy die or interposer and laterally overhangs the dummy die or interposer by at least 100 μm.
Method for arranging an armoring (8, 9) on a TiAl component of a turbomachine, the armoring being formed by an armor molded part which is applied to the TiAl component by brazing, characterized in that the brazing used is a nickel-based alloy which has the chemical composition 7.5 to 22.5 wt.% Cr, 0.5 to 7 wt.% B and the remainder Ni and unavoidable impurities.
An access point for use in a point to multipoint wireless network comprising the access point and a plurality of subscriber modules, the access point comprising: a sector antenna arranged to receive signals from a sector of an area of coverage of the access point at a first polarisation and at a second polarisation, different from the first polarisation; an antenna array of antenna elements, the antenna elements not including the sector antenna, and the antenna elements being arranged to receive signals from the same sector as the sector antenna at a third polarisation and at a fourth polarisation, different from the third polarisation; a first beamformer configurable to form a first beam from signals received at the antenna array at the third polarisation; a second beamformer configurable to form a second beam from signals received at the antenna array at the fourth polarisation; a selector switch switchable to at least a first state and a second state, wherein the selector switch is configured such that in the first state of the selector switch, signals received at the sector antenna at the first polarization are connected to a first receiver and signals from the second beamformer are connected to the second receiver, and in the second state of the selector switch, signals received from the first beamformer are connected to the first receiver and signals received at the sector antenna at the second polarization are connected to the second receiver; and a scheduler configured to set the selector switch to the first state for at least a first receive timeslot and to set the selector switch to the second state for at least a second receive timeslot. a sector antenna arranged to receive signals from a sector of an area of coverage of the access point at a first polarisation and at a second polarisation, different from the first polarisation; an antenna array of antenna elements, the antenna elements not including the sector antenna, and the antenna elements being arranged to receive signals from the same sector as the sector antenna at a third polarisation and at a fourth polarisation, different from the third polarisation; a first beamformer configurable to form a first beam from signals received at the antenna array at the third polarisation; a second beamformer configurable to form a second beam from signals received at the antenna array at the fourth polarisation; a selector switch switchable to at least a first state and a second state, wherein the selector switch is configured such that in the first state of the selector switch, signals received at the sector antenna at the first polarization are connected to a first receiver and signals from the second beamformer are connected to the second receiver, and in the second state of the selector switch, signals received from the first beamformer are connected to the first receiver and signals received at the sector antenna at the second polarization are connected to the second receiver; and a scheduler configured to set the selector switch to the first state for at least a first receive timeslot and to set the selector switch to the second state for at least a second receive timeslot.
Apparatus having a battery module consisting of at least one individual galvanic cell, having a tap of a module voltage (U MOD) between a highest potential of the battery module and a reference potential of the battery module, characterized in that the apparatus has a circuit arrangement, which is connected to the tap of the module voltage (U MOD) and is configured to emit a signal if the module voltage (U MOD) drops to zero, wherein the circuit arrangement has a capacitor, a series resistor, a normally conducting MOSFET, a fuse as well as a first circuit node, a second circuit node, a third circuit node and a fourth circuit node, - wherein the highest potential of the battery module is applied at the first circuit node, and - wherein the reference potential of the battery module is applied at the second circuit node, and - wherein the capacitor is arranged between the second circuit node and the third circuit node, and - wherein the series resistor is arranged between the first circuit node and the third circuit node, and - wherein the fuse is arranged between the third circuit node and the fourth circuit node, and - wherein the fourth circuit node is connected to the drain terminal of the MOSFET, and - wherein the source terminal of the MOSFET is connected to the second circuit node, and - wherein the gate terminal of the MOSFET is connected to the first circuit node. - wherein the highest potential of the battery module is applied at the first circuit node, and - wherein the reference potential of the battery module is applied at the second circuit node, and - wherein the capacitor is arranged between the second circuit node and the third circuit node, and - wherein the series resistor is arranged between the first circuit node and the third circuit node, and - wherein the fuse is arranged between the third circuit node and the fourth circuit node, and - wherein the fourth circuit node is connected to the drain terminal of the MOSFET, and - wherein the source terminal of the MOSFET is connected to the second circuit node, and - wherein the gate terminal of the MOSFET is connected to the first circuit node.
An apparatus with a homomorphic encryption operation, the apparatus comprising: one or more processors configured to: generate a modified vector by preprocessing vector components of an operand ciphertext of a blind rotation operation based on an order of a polynomial of an output ciphertext of the blind rotation operation and a modulus of the operand ciphertext; and generate a homomorphic encryption operation result by performing the blind rotation operation based on a public key for performing the blind rotation operation and the modified vector. generate a modified vector by preprocessing vector components of an operand ciphertext of a blind rotation operation based on an order of a polynomial of an output ciphertext of the blind rotation operation and a modulus of the operand ciphertext; and generate a homomorphic encryption operation result by performing the blind rotation operation based on a public key for performing the blind rotation operation and the modified vector.
A compound of formula wherein, Q is S or O; R 1 represents a side chain of an amino acid residue selected from Ser and Thr, optionally substituted with alkyl or acyl; R 2 is hydrogen or -CO-Aaa; Aaa is an amino acid residue selected from Thr and Ser; wherein a C-terminus thereof is a free terminus, is amidated, or is esterified; R 3 represents a side chain of an amino acid residue selected from Asn, Asp, Gln, and Glu; ----- is an optional bond; R 4 and R 5 independently are hydrogen or absent; R 6 is hydrogen, alkyl, or acyl; or a pharmaceutically acceptable salt thereof. Q is S or O; R 1 represents a side chain of an amino acid residue selected from Ser and Thr, optionally substituted with alkyl or acyl; R 2 is hydrogen or -CO-Aaa; Aaa is an amino acid residue selected from Thr and Ser; wherein a C-terminus thereof is a free terminus, is amidated, or is esterified; R 3 represents a side chain of an amino acid residue selected from Asn, Asp, Gln, and Glu; ----- is an optional bond; R 4 and R 5 independently are hydrogen or absent; R 6 is hydrogen, alkyl, or acyl; or a pharmaceutically acceptable salt thereof.
Laundry care appliance for laundry care, comprising a heat-generating device for generating heat, comprising a liquor-generating device for generating wash liquor and an outer tub for receiving the wash liquor, characterised in that the liquor-generating device is designed to generate a first wash liquor having a first concentration of a detergent in a first segment of a first time period, to generate a second wash liquor having a second concentration of the detergent in a second segment of the first time period, wherein the first concentration is greater than the second concentration, to generate a third wash liquor having a third concentration of the detergent in a first segment of a second time period, wherein the third concentration is lower than the second concentration and the heat-generating device is designed to generate a first temperature of wash liquor in the first time period and a second temperature of wash liquor in the second time period, wherein the first temperature is higher than the second temperature.