A method of device packaging of an RF semiconductor device comprising the steps of: - Providing a leadframe comprising a base with an upper surface and a connection lead; - Mounting at least one semiconductor device die on the upper surface of the base, either before or after the moulding process; - Placing a first film and a second film over the leads, base and the one or more semiconductor device dies, if any, wherein the first film is arranged for a top portion of a mould and the second film is arranged for a bottom portion of the mould; - Applying pressure and heat to the films (34, 36) so that they are sealed around the base, the leads and the one or more semiconductor dies, if any, such that a first cavity is created around the at least one semiconductor device die, if any, and a second set of cavities is created at top and bottom of the leads, where the leads overlap the base and between the leads and the base; - Providing said assembly of base, leads, one or more semiconductor dies if any, and films (34, 36) into a moulding machine, such that a top portion of the mould is arranged to the first film and a bottom portion of the mould is arranged to the second film; - Injecting moulding compound into the second cavities, thus electrically isolating the leads from the base, and curing the moulding compound, to obtain a device manufactured by film assisted moulding; - Releasing the device from the moulding machine; - Wirebonding the semiconductor device die to the lead, Wherein the connection lead comprising a connection portion for electrical connection to a semiconductor device die, wherein an edge of said connection portion comprises a recessed portion, wherein the recessed portion is arranged to seal against the first film during moulding of the RF semiconductor device. - Providing a leadframe comprising a base with an upper surface and a connection lead; - Mounting at least one semiconductor device die on the upper surface of the base, either before or after the moulding process; - Placing a first film and a second film over the leads, base and the one or more semiconductor device dies, if any, wherein the first film is arranged for a top portion of a mould and the second film is arranged for a bottom portion of the mould; - Applying pressure and heat to the films (34, 36) so that they are sealed around the base, the leads and the one or more semiconductor dies, if any, such that a first cavity is created around the at least one semiconductor device die, if any, and a second set of cavities is created at top and bottom of the leads, where the leads overlap the base and between the leads and the base; - Providing said assembly of base, leads, one or more semiconductor dies if any, and films (34, 36) into a moulding machine, such that a top portion of the mould is arranged to the first film and a bottom portion of the mould is arranged to the second film; - Injecting moulding compound into the second cavities, thus electrically isolating the leads from the base, and curing the moulding compound, to obtain a device manufactured by film assisted moulding; - Releasing the device from the moulding machine; - Wirebonding the semiconductor device die to the lead,