A solid-state imaging device comprising: a light receiving section having a plurality of pixels including photodiodes, respectively, the pixels being two-dimensionally arrayed in M rows and N columns, wherein a contour between one side of the light receiving section extending along a row direction and a pair of sides of the light receiving section extending along a column direction has a stepped shape; and a dummy photodiode region formed along the stepped contour of the light receiving section, the dummy photodiode region being a region configured to eliminate carriers generated in the periphery of the stepped light receiving section, characterized in that the solid-state imaging device further comprises N readout lines disposed for the respective columns, and connected with the photodiodes included in the pixels of the respective columns via readout switches (SWa); and a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch (SWa) for each of the rows; and wherein the light receiving section is configured such that L row groups (A 1 -A L) each of which includes a plurality of rows having the same quantity of columns and arranged in the column direction, where L≥2, quantities of columns N L-LA+1 to N L of consecutive LA row groups including a row group that has a quantity of columns N L and is located at one end in the column direction out of the L row groups satisfies N L <N L-1 <...<N L-LA+1, form the contour of the light receiving section having the stepped shape, where 2≤LA<L, the vertical shift register is formed of a plurality of shift register parts, wherein each of the respective shift register parts is arranged along an end column of the corresponding row group and each of the L row groups is associated with a respective shift register part being disposed along the respective end column of this row group, and at least a part of the dummy photodiode region is formed between the respective shift register parts of the vertical shift register corresponding to respective row groups of the light receiving section and the row groups. a light receiving section having a plurality of pixels including photodiodes, respectively, the pixels being two-dimensionally arrayed in M rows and N columns, wherein a contour between one side of the light receiving section extending along a row direction and a pair of sides of the light receiving section extending along a column direction has a stepped shape; and a dummy photodiode region formed along the stepped contour of the light receiving section, the dummy photodiode region being a region configured to eliminate carriers generated in the periphery of the stepped light receiving section, characterized in that the solid-state imaging device further comprises N readout lines disposed for the respective columns, and connected with the photodiodes included in the pixels of the respective columns via readout switches (SWa); and a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch (SWa) for each of the rows; and wherein the light receiving section is configured such that L row groups (A 1 -A L) each of which includes a plurality of rows having the same quantity of columns and arranged in the column direction, where L≥2, quantities of columns N L-LA+1 to N L of consecutive LA row groups including a row group that has a quantity of columns N L and is located at one end in the column direction out of the L row groups satisfies N L <N L-1 <...<N L-LA+1, form the contour of the light receiving section having the stepped shape, where 2≤LA<L, the vertical shift register is formed of a plurality of shift register parts, wherein each of the respective shift register parts is arranged along an end column of the corresponding row group and each of the L row groups is associated with a respective shift register part being disposed along the respective end column of this row group, and at least a part of the dummy photodiode region is formed between the respective shift register parts of the vertical shift register corresponding to respective row groups of the light receiving section and the row groups.