A light emitting diode device comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer, the active layer including a plurality of quantum wells and a plurality of quantum walls stacked alternately, an undoped last barrier layer on the active layer; an Al x In y Ga (1-x-y) N (0≤x≤1, 0≤y≤1)-based layer on the undoped last barrier layer; and a second conductivity type semiconductor layer on the Al x In y Ga (1-x-y) N-based layer, wherein the undoped last barrier layer is disposed between the Al x In y Ga (1-x-y) N (0≤x≤1, 0≤y≤1)-based layer and a last quantum well which is closest to the second conductivity type semiconductor layer among the quantum wells, and characterized in that the undoped last barrier layer comprises: a first In p1 Ga 1-p1 N (0<p 1 <1) layer on the last quantum well; an Al q1 In q2 Ga 1-q1-q2 N (0<q1, q2<1) layer on the first In p1 Ga 1-p1 N layer; and a second In p2 Ga 1-p2 N (0<p 2 <1) layer on the Al q1 In q2 Ga 1-q1-q2 N layer, wherein the Al q1 In q2 Ga 1-q1-q2 N (0<ql, q2<1) layer is directly inter-disposed between the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p2<1) layer, and wherein lattice constants of the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p 2 <1) layer in a surface direction are greater than a lattice constant of the Al q1 In q2 Ga 1-q1-q2 N layer in a surface direction. a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer, the active layer including a plurality of quantum wells and a plurality of quantum walls stacked alternately, an undoped last barrier layer on the active layer; an Al x In y Ga (1-x-y) N (0≤x≤1, 0≤y≤1)-based layer on the undoped last barrier layer; and a second conductivity type semiconductor layer on the Al x In y Ga (1-x-y) N-based layer, wherein the undoped last barrier layer is disposed between the Al x In y Ga (1-x-y) N (0≤x≤1, 0≤y≤1)-based layer and a last quantum well which is closest to the second conductivity type semiconductor layer among the quantum wells, and characterized in that the undoped last barrier layer comprises: a first In p1 Ga 1-p1 N (0<p 1 <1) layer on the last quantum well; an Al q1 In q2 Ga 1-q1-q2 N (0<q1, q2<1) layer on the first In p1 Ga 1-p1 N layer; and a second In p2 Ga 1-p2 N (0<p 2 <1) layer on the Al q1 In q2 Ga 1-q1-q2 N layer, wherein the Al q1 In q2 Ga 1-q1-q2 N (0<ql, q2<1) layer is directly inter-disposed between the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p2<1) layer, and wherein lattice constants of the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p 2 <1) layer in a surface direction are greater than a lattice constant of the Al q1 In q2 Ga 1-q1-q2 N layer in a surface direction. a first In p1 Ga 1-p1 N (0<p 1 <1) layer on the last quantum well; an Al q1 In q2 Ga 1-q1-q2 N (0<q1, q2<1) layer on the first In p1 Ga 1-p1 N layer; and a second In p2 Ga 1-p2 N (0<p 2 <1) layer on the Al q1 In q2 Ga 1-q1-q2 N layer, wherein the Al q1 In q2 Ga 1-q1-q2 N (0<ql, q2<1) layer is directly inter-disposed between the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p2<1) layer, and wherein lattice constants of the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p 2 <1) layer in a surface direction are greater than a lattice constant of the Al q1 In q2 Ga 1-q1-q2 N layer in a surface direction. wherein the Al q1 In q2 Ga 1-q1-q2 N (0<ql, q2<1) layer is directly inter-disposed between the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p2<1) layer, and wherein lattice constants of the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p 2 <1) layer in a surface direction are greater than a lattice constant of the Al q1 In q2 Ga 1-q1-q2 N layer in a surface direction. wherein lattice constants of the first In p1 Ga 1-p1 N (0<p1<1) layer and the second In p2 Ga 1-p2 N (0<p 2 <1) layer in a surface direction are greater than a lattice constant of the Al q1 In q2 Ga 1-q1-q2 N layer in a surface direction.