A method of manufacturing a semiconductor device comprising following manufacturing steps: (a) providing a wide bandgap substrate product having a lowly doped layer of a first conductivity type forming a drift layer in the semiconductor device, the substrate product having a first side and a second side opposite to the first side, wherein the lowly doped layer is arranged on the first side, (b) then creating on the first side a source region of the first conductivity type having higher doping concentration than the drift layer up to a source region depth, at least one channel layer (4, 4') of a second conductivity type, which is different from the first conductivity type, having a channel layer depth and surrounding the source region in a lateral direction, which direction is parallel to the first side, thereby separating the source region from the drift layer in the lateral direction, and a well layer of the second conductivity type having a well layer depth, which is at least as large as the channel layer depth, and having a higher doping concentration than the at least one channel layer (4, 4'), wherein the well layer separates the source region from the drift layer on a side of the well layer opposite to the first side, (c) after step (b) applying a continuous mask layer on the first side, then removing material through the continuous mask layer, thereby forming a plug mask having a plug mask opening in the central area of the well layer and source region to a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, thereby splitting the source region into two source regions (3, 3'), applying a dopant of the second conductivity type on the first side such that creating a plug of the second conductivity type in the plug mask opening, the plug extending to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layer (5, 5'), thereby by the creation of the plug splitting the well layer into two well layers (5, 5'), (d) after step (c) creating two gate electrodes on the first side, each of which are separated from any doped layer by an insulating layer, (e) after step (c) creating a first main electrode as an ohmic contact on the first side, which contacts the source regions (3, 3'), the well layers (5, 5') and the plug, characterized in that in step (b) first applying a first mask with an opening for the creation of a channel layer, then applying a first dopant of the second conductivity type for the creation of the channel layer up to the channel layer depth, then applying a further layer on the lateral sides of the first mask, by which further layer the openings are narrowed, thereby forming a second mask, then applying a second dopant of the first conductivity type for the creation of the source region up to the source region depth, then applying a third dopant of the second conductivity type for the creation of the at least one well layer (5, 5') up to the well layer depth. (a) providing a wide bandgap substrate product having a lowly doped layer of a first conductivity type forming a drift layer in the semiconductor device, the substrate product having a first side and a second side opposite to the first side, wherein the lowly doped layer is arranged on the first side, (b) then creating on the first side a source region of the first conductivity type having higher doping concentration than the drift layer up to a source region depth, at least one channel layer (4, 4') of a second conductivity type, which is different from the first conductivity type, having a channel layer depth and surrounding the source region in a lateral direction, which direction is parallel to the first side, thereby separating the source region from the drift layer in the lateral direction, and a well layer of the second conductivity type having a well layer depth, which is at least as large as the channel layer depth, and having a higher doping concentration than the at least one channel layer (4, 4'), wherein the well layer separates the source region from the drift layer on a side of the well layer opposite to the first side, (c) after step (b) applying a continuous mask layer on the first side, then removing material through the continuous mask layer, thereby forming a plug mask having a plug mask opening in the central area of the well layer and source region to a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, thereby splitting the source region into two source regions (3, 3'), applying a dopant of the second conductivity type on the first side such that creating a plug of the second conductivity type in the plug mask opening, the plug extending to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layer (5, 5'), thereby by the creation of the plug splitting the well layer into two well layers (5, 5'), (d) after step (c) creating two gate electrodes on the first side, each of which are separated from any doped layer by an insulating layer, (e) after step (c) creating a first main electrode as an ohmic contact on the first side, which contacts the source regions (3, 3'), the well layers (5, 5') and the plug,