A semiconductor device comprising: a semiconductor substrate; an interlayer insulating film (INS1, INS2, INS3) formed on a main surface of the semiconductor substrate; a first wiring (M1W, M2W) and a second wiring formed in the interlayer insulating film (INS1, INS2, INS3), the first wiring and the second wiring being adjacent from each other; and an insulating barrier film (BR1, BR2) covering the first wiring the second wiring and the interlayer insulating film (INS1, INS2, INS3), the insulating barrier film (BR1, BR2) being in contact with the first wiring the second wiring and the interlayer insulating film (INS1, INS2, INS3), wherein the first wiring and the second wiring are mainly made of copper, wherein the interlayer insulating film (INS1, INS2, INS3) comprises: a first region containing nitrogen, the first region positioned on a surface of the interlayer insulating film (INS1, INS2, INS3); a second region containing nitrogen, the second region positioned at a position deeper than the first region; a third region containing nitrogen, the third region positioned at a position deeper than the second region; and a fourth region containing nitrogen, the fourth region positioned at a position deeper than the third region, wherein a nitrogen concentration of the second region gradually increases, wherein the third region has a peak of a nitrogen concentration and has a nitrogen concentration higher than a nitrogen concentration of the first region, and wherein a nitrogen concentration of the fourth region gradually decreases. a semiconductor substrate; an interlayer insulating film (INS1, INS2, INS3) formed on a main surface of the semiconductor substrate; a first wiring (M1W, M2W) and a second wiring formed in the interlayer insulating film (INS1, INS2, INS3), the first wiring and the second wiring being adjacent from each other; and an insulating barrier film (BR1, BR2) covering the first wiring the second wiring and the interlayer insulating film (INS1, INS2, INS3), the insulating barrier film (BR1, BR2) being in contact with the first wiring the second wiring and the interlayer insulating film (INS1, INS2, INS3), wherein the first wiring and the second wiring are mainly made of copper, wherein the interlayer insulating film (INS1, INS2, INS3) comprises: a first region containing nitrogen, the first region positioned on a surface of the interlayer insulating film (INS1, INS2, INS3); a second region containing nitrogen, the second region positioned at a position deeper than the first region; a third region containing nitrogen, the third region positioned at a position deeper than the second region; and a fourth region containing nitrogen, the fourth region positioned at a position deeper than the third region, a first region containing nitrogen, the first region positioned on a surface of the interlayer insulating film (INS1, INS2, INS3); a second region containing nitrogen, the second region positioned at a position deeper than the first region; a third region containing nitrogen, the third region positioned at a position deeper than the second region; and a fourth region containing nitrogen, the fourth region positioned at a position deeper than the third region, wherein a nitrogen concentration of the second region gradually increases, wherein the third region has a peak of a nitrogen concentration and has a nitrogen concentration higher than a nitrogen concentration of the first region, and wherein a nitrogen concentration of the fourth region gradually decreases.