A system for simultaneously manufacturing a plurality of single crystals of a semiconductor material by physical vapor transport, the system comprising: a plurality of reactors, each reactor comprising: an inner chamber adapted to accommodate a PVT growth structure inside, wherein the PVT growth structure includes a source material compartment containing a source material and at least one crystal seed arranged in a respective growth compartment of the PVT growth structure for growing at least one single crystal from said source material inside the PVT growth structure; a heating system associated with the respective reactor and adapted to heat the PVT growth structure arranged inside the reactor inner chamber; and a gas feed, provided on a side of the reactor, adapted to supply doping and/or gaseous compounds, from a gas supply, to achieve a predetermined doping or inert gaseous atmosphere in the inner chamber for growing the at least one single crystal inside the accomodated PVT growth structure; and a common vacuum channel adapted to connect two or more reactors of said plurality of reactors to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of said connected two or more reactors, wherein the common vacuum channel comprises one or more vacuum tubes that connect the plurality of reactors in a serial manner so that one of the plurality of reactors is directly connectable to the vacuum pump system and the other reactors of the plurality of reactors is evacuated via the common vacuum channel, and wherein each reactor and respective inner chamber are connected to a vacuum tube on a side of the reactor opposite to the reactor side where the gas feed is provided for facilitating distribution of the gases in the inner chamber. a plurality of reactors, each reactor comprising: an inner chamber adapted to accommodate a PVT growth structure inside, wherein the PVT growth structure includes a source material compartment containing a source material and at least one crystal seed arranged in a respective growth compartment of the PVT growth structure for growing at least one single crystal from said source material inside the PVT growth structure; a heating system associated with the respective reactor and adapted to heat the PVT growth structure arranged inside the reactor inner chamber; and a gas feed, provided on a side of the reactor, adapted to supply doping and/or gaseous compounds, from a gas supply, to achieve a predetermined doping or inert gaseous atmosphere in the inner chamber for growing the at least one single crystal inside the accomodated PVT growth structure; and an inner chamber adapted to accommodate a PVT growth structure inside, wherein the PVT growth structure includes a source material compartment containing a source material and at least one crystal seed arranged in a respective growth compartment of the PVT growth structure for growing at least one single crystal from said source material inside the PVT growth structure; a heating system associated with the respective reactor and adapted to heat the PVT growth structure arranged inside the reactor inner chamber; and a gas feed, provided on a side of the reactor, adapted to supply doping and/or gaseous compounds, from a gas supply, to achieve a predetermined doping or inert gaseous atmosphere in the inner chamber for growing the at least one single crystal inside the accomodated PVT growth structure; and a common vacuum channel adapted to connect two or more reactors of said plurality of reactors to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of said connected two or more reactors, wherein the common vacuum channel comprises one or more vacuum tubes that connect the plurality of reactors in a serial manner so that one of the plurality of reactors is directly connectable to the vacuum pump system and the other reactors of the plurality of reactors is evacuated via the common vacuum channel, and wherein each reactor and respective inner chamber are connected to a vacuum tube on a side of the reactor opposite to the reactor side where the gas feed is provided for facilitating distribution of the gases in the inner chamber.