A photoelectric conversion element comprising: a substrate; a first electrode; a hole blocking layer; a photoelectric conversion layer; and a second electrode, wherein the photoelectric conversion layer includes an electron-transporting layer and a hole-transporting layer, wherein in an edge part of the photoelectric conversion element in a direction orthogonal to a stacking direction of the substrate, the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode, in the photoelectric conversion element, an outermost end of the electron-transporting layer is positioned further inside than an outermost end of the first electrode, in the photoelectric conversion element, an outermost end of the hole-transporting layer is positioned further outside than an outermost end of the second electrode, and in the photoelectric conversion element, the outermost end of the second electrode is positioned further inside than the outermost end of the electron-transporting layer, and wherein a height of an edge part including the outermost end of the first electrode in the stacking direction is smaller than a total (ha) of an average thickness of the first electrode, an average thickness of the hole blocking layer, and an average thickness of the electron-transporting layer, where the height is a distance between a surface of the substrate at a side of the first electrode in the edge part of the photoelectric conversion element and a portion of the first electrode closest to a side of the second electrode in the edge part of the photoelectric conversion element, characterised in that, in the photoelectric conversion element, a region including same material as a material of the hole-transporting layer exists in contact with the substrate and is positioned further outside than the outermost end of the electron-transporting layer, wherein the region is integrated with the hole-transporting layer, and a length of the region in the stacking direction is larger than the total of the average thickness of the first electrode, the average thickness of the hole blocking layer, and the average thickness of the electron-transporting layer. a substrate; a first electrode; a hole blocking layer; a photoelectric conversion layer; and a second electrode, wherein the photoelectric conversion layer includes an electron-transporting layer and a hole-transporting layer, wherein in an edge part of the photoelectric conversion element in a direction orthogonal to a stacking direction of the substrate, the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode, in the photoelectric conversion element, an outermost end of the electron-transporting layer is positioned further inside than an outermost end of the first electrode, in the photoelectric conversion element, an outermost end of the hole-transporting layer is positioned further outside than an outermost end of the second electrode, and in the photoelectric conversion element, the outermost end of the second electrode is positioned further inside than the outermost end of the electron-transporting layer, and in the photoelectric conversion element, an outermost end of the electron-transporting layer is positioned further inside than an outermost end of the first electrode, in the photoelectric conversion element, an outermost end of the hole-transporting layer is positioned further outside than an outermost end of the second electrode, and in the photoelectric conversion element, the outermost end of the second electrode is positioned further inside than the outermost end of the electron-transporting layer, and wherein a height of an edge part including the outermost end of the first electrode in the stacking direction is smaller than a total (ha) of an average thickness of the first electrode, an average thickness of the hole blocking layer, and an average thickness of the electron-transporting layer, where the height is a distance between a surface of the substrate at a side of the first electrode in the edge part of the photoelectric conversion element and a portion of the first electrode closest to a side of the second electrode in the edge part of the photoelectric conversion element, characterised in that, in the photoelectric conversion element, a region including same material as a material of the hole-transporting layer exists in contact with the substrate and is positioned further outside than the outermost end of the electron-transporting layer, wherein the region is integrated with the hole-transporting layer, and a length of the region in the stacking direction is larger than the total of the average thickness of the first electrode, the average thickness of the hole blocking layer, and the average thickness of the electron-transporting layer.