An electronic circuit, comprising: a silicon carbide metal oxide semiconductor field effect transistor, MOSFET, including a gate contact, a drain contact and a source contact; and a silicon carbide based bidirectional transient voltage suppression device coupled between the gate and source contacts of the silicon carbide MOSFET, the silicon carbide based bidirectional transient voltage suppression device including: an n-type silicon carbide substrate having a first surface and a second surface opposite the first surface; and first and second silicon carbide Zener diodes, wherein each of the first and second silicon carbide Zener diodes comprises a respective mesa on the n-type silicon carbide substrate, the mesa defining a Zener junction (25A, 25B) of the corresponding silicon carbide Zener diode and comprising a heavily doped p-type silicon carbide layer (24A, 24B) on the n-type silicon carbide substrate, and an ohmic contact (26A, 26B) on said respective mesa and forming an ohmic contact with the heavily doped p-type silicon carbide layer, wherein the n-type silicon carbide substrate is conductively connected to the first and second silicon carbide Zener diodes; and a cathode ohmic contact layer on the n-type silicon carbide substrate, the cathode ohmic contact layer providing a common cathode contact to the first and second silicon carbide Zener diodes. a silicon carbide metal oxide semiconductor field effect transistor, MOSFET, including a gate contact, a drain contact and a source contact; and a silicon carbide based bidirectional transient voltage suppression device coupled between the gate and source contacts of the silicon carbide MOSFET, the silicon carbide based bidirectional transient voltage suppression device including: an n-type silicon carbide substrate having a first surface and a second surface opposite the first surface; and first and second silicon carbide Zener diodes, wherein each of the first and second silicon carbide Zener diodes comprises a respective mesa on the n-type silicon carbide substrate, the mesa defining a Zener junction (25A, 25B) of the corresponding silicon carbide Zener diode and comprising a heavily doped p-type silicon carbide layer (24A, 24B) on the n-type silicon carbide substrate, and an ohmic contact (26A, 26B) on said respective mesa and forming an ohmic contact with the heavily doped p-type silicon carbide layer, wherein the n-type silicon carbide substrate is conductively connected to the first and second silicon carbide Zener diodes; and a cathode ohmic contact layer on the n-type silicon carbide substrate, the cathode ohmic contact layer providing a common cathode contact to the first and second silicon carbide Zener diodes. an n-type silicon carbide substrate having a first surface and a second surface opposite the first surface; and first and second silicon carbide Zener diodes, wherein each of the first and second silicon carbide Zener diodes comprises a respective mesa on the n-type silicon carbide substrate, the mesa defining a Zener junction (25A, 25B) of the corresponding silicon carbide Zener diode and comprising a heavily doped p-type silicon carbide layer (24A, 24B) on the n-type silicon carbide substrate, and an ohmic contact (26A, 26B) on said respective mesa and forming an ohmic contact with the heavily doped p-type silicon carbide layer, wherein the n-type silicon carbide substrate is conductively connected to the first and second silicon carbide Zener diodes; and a cathode ohmic contact layer on the n-type silicon carbide substrate, the cathode ohmic contact layer providing a common cathode contact to the first and second silicon carbide Zener diodes.