An optoelectronic semiconductor component, comprising: an active layer that is suitable for generating radiation, a first waveguide layer positioned on a first side of the active layer, a first cladding layer positioned on the first waveguide layer, a second waveguide layer positioned on a second side of the active layer, and a second cladding layer positioned on the second waveguide layer, wherein the first side and the second side are opposite with respect to the active layer, wherein a reflection facet for reflecting the radiation emitted by the active layer and an emission facet for reflection and feed-out of the radiation emitted by the active layer are provided, wherein the reflection facet and the emission facet are each positioned in the marginal area of the active layer and wherein the reflection facet and the emission facet are positioned opposite one another with respect to the active layer such that the condition is met: (i) the active layer, the first cladding layer, the first waveguide layer, the second waveguide layer and the second cladding layer are designed such that the conditions 0.01 μm ≤ d wL ≤ 1.0 μm and Δn ≥ 0.04; are met, wherein d wL is the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer, and Δn is a maximum of the refractive index difference between the first waveguide layer and the first cladding layer and the refractive index difference between the second waveguide layer and the second cladding layer, characterized in that the condition (ii) is met: (ii) the semiconductor component comprises a ridge waveguide with an effective index step Δn eff > 0.06. an active layer that is suitable for generating radiation, a first waveguide layer positioned on a first side of the active layer, a first cladding layer positioned on the first waveguide layer, a second waveguide layer positioned on a second side of the active layer, and a second cladding layer positioned on the second waveguide layer, wherein the first side and the second side are opposite with respect to the active layer, wherein a reflection facet for reflecting the radiation emitted by the active layer and an emission facet for reflection and feed-out of the radiation emitted by the active layer are provided, wherein the reflection facet and the emission facet are each positioned in the marginal area of the active layer and wherein the reflection facet and the emission facet are positioned opposite one another with respect to the active layer such that the condition is met: (i) the active layer, the first cladding layer, the first waveguide layer, the second waveguide layer and the second cladding layer are designed such that the conditions 0.01 μm ≤ d wL ≤ 1.0 μm and Δn ≥ 0.04; are met, wherein d wL is the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer, and Δn is a maximum of the refractive index difference between the first waveguide layer and the first cladding layer and the refractive index difference between the second waveguide layer and the second cladding layer, characterized in that the condition (ii) is met: (ii) the semiconductor component comprises a ridge waveguide with an effective index step Δn eff > 0.06. (i) the active layer, the first cladding layer, the first waveguide layer, the second waveguide layer and the second cladding layer are designed such that the conditions 0.01 μm ≤ d wL ≤ 1.0 μm and Δn ≥ 0.04; are met, wherein d wL is the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer, and Δn is a maximum of the refractive index difference between the first waveguide layer and the first cladding layer and the refractive index difference between the second waveguide layer and the second cladding layer, characterized in that the condition (ii) is met: (ii) the semiconductor component comprises a ridge waveguide with an effective index step Δn eff > 0.06. (ii) the semiconductor component comprises a ridge waveguide with an effective index step Δn eff > 0.06.