A current detection device comprising: a first drive transistor having a drain supplied with a first power supply voltage and a source connected to an output terminal to which an outside load is connected; a first sense transistor having a drain supplied with the first power supply potential, configured to cause a first sense current proportional to a current flowing through the first drive transistor to flow therethrough; a first voltage control circuit configured to control the first sense current flowing from the first sense transistor based on a potential difference between a source voltage of the first drive transistor and a source voltage of the first sense transistor; and a first switch configured to connect between the source of the first drive transistor and a source of the first sense transistor, wherein the first power supply voltage is a high potential side power supply voltage (Vbat), the outside load is connected between the output terminal and a low potential side power supply voltage, wherein the first sense current is outputted as a detection current (lin), wherein the first voltage control circuit comprises: a first amplifier configured to output an amplified potential difference between the source voltage of the first drive transistor and the source voltage of the first sense transistor, and a first voltage control transistor having a gate supplied with the output of the first amplifier and one of a source and a drain connected to the source of the first sense transistor, and wherein the first switch is configured, when the first drive transistor is turned off, to turn on to short-circuit the source of the first drive transistor and the source of the first sense transistor, thereby causing the source-drain voltage of each of the first drive transistor and the first sense transistor having the same value, and wherein the first switch is configured to turn off, when the first drive transistor is turned on. a first drive transistor having a drain supplied with a first power supply voltage and a source connected to an output terminal to which an outside load is connected; a first sense transistor having a drain supplied with the first power supply potential, configured to cause a first sense current proportional to a current flowing through the first drive transistor to flow therethrough; a first voltage control circuit configured to control the first sense current flowing from the first sense transistor based on a potential difference between a source voltage of the first drive transistor and a source voltage of the first sense transistor; and a first switch configured to connect between the source of the first drive transistor and a source of the first sense transistor, wherein the first power supply voltage is a high potential side power supply voltage (Vbat), the outside load is connected between the output terminal and a low potential side power supply voltage, wherein the first sense current is outputted as a detection current (lin), wherein the first voltage control circuit comprises: a first amplifier configured to output an amplified potential difference between the source voltage of the first drive transistor and the source voltage of the first sense transistor, and a first voltage control transistor having a gate supplied with the output of the first amplifier and one of a source and a drain connected to the source of the first sense transistor, and a first amplifier configured to output an amplified potential difference between the source voltage of the first drive transistor and the source voltage of the first sense transistor, and a first voltage control transistor having a gate supplied with the output of the first amplifier and one of a source and a drain connected to the source of the first sense transistor, and wherein the first switch is configured, when the first drive transistor is turned off, to turn on to short-circuit the source of the first drive transistor and the source of the first sense transistor, thereby causing the source-drain voltage of each of the first drive transistor and the first sense transistor having the same value, and wherein the first switch is configured to turn off, when the first drive transistor is turned on.