A temporary adhesion method for temporarily bonding a support and a wafer having a front surface on which a circuit is formed and a back surface to be processed via a temporary adhesive material for a wafer processing, the method comprising the steps of: attaching the wafer to the support via the temporary adhesive material that consists of a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer exhibiting a storage modulus E' of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25°C and a second temporary adhesive layer composed of a thermosetting polymer layer exhibiting a storage modulus E' of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25°C after curing, to form a wafer processing laminate consisting of the wafer, the thermoplastic resin layer, the thermosetting polymer layer, and the support, wherein, the storage modulus E' and the tensile rupture strength are measured in accordance with JIS K 7244 and JIS K 7127, respectively, and wherein the attaching is performed by forming the thermoplastic resin layer on the front surface of the wafer from a liquid composition (A') containing a thermoplastic resin, forming the thermosetting polymer layer on the support by laminating a film resin (B') that has been formed from a composition containing a thermosetting polymer, and then heating the wafer and the support under reduced pressure, or forming the thermoplastic resin layer on the front surface of the wafer from the liquid composition (A'), forming the thermosetting polymer layer on the resin layer by laminating the film resin (B'), and then heating the wafer and the support under reduced pressure; and adhesively bonding the thermoplastic resin layer and the thermosetting polymer layer by heat curing the thermosetting polymer layer. attaching the wafer to the support via the temporary adhesive material that consists of a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer exhibiting a storage modulus E' of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25°C and a second temporary adhesive layer composed of a thermosetting polymer layer exhibiting a storage modulus E' of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25°C after curing, to form a wafer processing laminate consisting of the wafer, the thermoplastic resin layer, the thermosetting polymer layer, and the support, wherein, the storage modulus E' and the tensile rupture strength are measured in accordance with JIS K 7244 and JIS K 7127, respectively, and wherein the attaching is performed by forming the thermoplastic resin layer on the front surface of the wafer from a liquid composition (A') containing a thermoplastic resin, forming the thermosetting polymer layer on the support by laminating a film resin (B') that has been formed from a composition containing a thermosetting polymer, and then heating the wafer and the support under reduced pressure, or forming the thermoplastic resin layer on the front surface of the wafer from the liquid composition (A'), forming the thermosetting polymer layer on the resin layer by laminating the film resin (B'), and then heating the wafer and the support under reduced pressure; and adhesively bonding the thermoplastic resin layer and the thermosetting polymer layer by heat curing the thermosetting polymer layer.