An apparatus comprising: a substrate having a first end portion and a second end portion, the first end portion being laterally separated from the second end portion; at least two regions of a first semiconductor material and at least two regions of a second semiconductor material being alternatively interleaved above the substrate and extending laterally between the first end portion and the second end portion, the first semiconductor material having a first doping type and the second semiconductor material having a second doping type that is different than the first doping type; a first electrode on the substrate at the first end portion and a second electrode on the substrate at the second end portion, each of the first electrode and the second electrode being configured and arranged to operate both as a source and drain; and a first gate electrode having multiple portions on each of the first semiconductor material and the second semiconductor material and a second gate electrode having multiple portions on each of the first semiconductor material and the second semiconductor material, the first gate electrode and the second gate electrode being configured and arranged to bidirectionally control current flow between the first electrode and the second electrode in the first semiconductor material and the second semiconductor material by applying voltages to the first gate electrode and the second gate electrode; wherein the substrate, the first semiconductor material, and the second semiconductor material each have mirror symmetry in a plane that is perpendicular to both the top surface of the semiconductor material and the plane that forms the boundary between the at least two adjacent regions of the first semiconductor material and the second semiconductor material; and wherein the first electrode has mirror symmetry with the second electrode in that mirror symmetry plane, and the first gate electrode has mirror symmetry with the second gate electrode in that mirror symmetry plane. a substrate having a first end portion and a second end portion, the first end portion being laterally separated from the second end portion; at least two regions of a first semiconductor material and at least two regions of a second semiconductor material being alternatively interleaved above the substrate and extending laterally between the first end portion and the second end portion, the first semiconductor material having a first doping type and the second semiconductor material having a second doping type that is different than the first doping type; a first electrode on the substrate at the first end portion and a second electrode on the substrate at the second end portion, each of the first electrode and the second electrode being configured and arranged to operate both as a source and drain; and a first gate electrode having multiple portions on each of the first semiconductor material and the second semiconductor material and a second gate electrode having multiple portions on each of the first semiconductor material and the second semiconductor material, the first gate electrode and the second gate electrode being configured and arranged to bidirectionally control current flow between the first electrode and the second electrode in the first semiconductor material and the second semiconductor material by applying voltages to the first gate electrode and the second gate electrode; wherein the substrate, the first semiconductor material, and the second semiconductor material each have mirror symmetry in a plane that is perpendicular to both the top surface of the semiconductor material and the plane that forms the boundary between the at least two adjacent regions of the first semiconductor material and the second semiconductor material; and wherein the first electrode has mirror symmetry with the second electrode in that mirror symmetry plane, and the first gate electrode has mirror symmetry with the second gate electrode in that mirror symmetry plane.