A micro or nano electromechanical transducer device formed on a semiconductor substrate comprising: a movable structure arranged to be movable in response to actuation of an actuating structure and comprising: a mechanical stack having at least one mechanical layer, the mechanical stack having a first thermal response characteristic; an actuating stack formed over the mechanical stack, the actuating stack consisting of a plurality of actuating layers of the actuating structure, the actuating layers having a second thermal response characteristic different to the first thermal response characteristic; and the movable structure further comprising a thermal compensation structure having at least one thermal compensation layer, wherein the thermal compensation structure comprises less layers than the actuating stack, and wherein the thermal compensation structure is arranged to reduce a thermal effect produced by the mechanical stack and the actuating layers which is a deflection variation of the movable structure relative to the semiconductor substrate due to a variation in operating temperature, wherein the thermal compensation structure is formed of compensation material selected according to the Coefficient of Thermal Expansion and Young's modulus of the compensation material, wherein the plurality of actuating layers occupies a first area in a plane substantially parallel to the mechanical stack and wherein the thermal compensation structure occupies a second area in a plane substantially parallel to the mechanical stack, wherein the second area is substantially the same as the first area, wherein the plurality of actuating layers includes a piezoelectric layer or a magnetic layer, the movable structure being movable in response to piezoelectric or magnetic actuation of the plurality of layers. a movable structure arranged to be movable in response to actuation of an actuating structure and comprising: a mechanical stack having at least one mechanical layer, the mechanical stack having a first thermal response characteristic; an actuating stack formed over the mechanical stack, the actuating stack consisting of a plurality of actuating layers of the actuating structure, the actuating layers having a second thermal response characteristic different to the first thermal response characteristic; and the movable structure further comprising a thermal compensation structure having at least one thermal compensation layer, wherein the thermal compensation structure comprises less layers than the actuating stack, and wherein the thermal compensation structure is arranged to reduce a thermal effect produced by the mechanical stack and the actuating layers which is a deflection variation of the movable structure relative to the semiconductor substrate due to a variation in operating temperature, wherein the thermal compensation structure is formed of compensation material selected according to the Coefficient of Thermal Expansion and Young's modulus of the compensation material, wherein the plurality of actuating layers occupies a first area in a plane substantially parallel to the mechanical stack and wherein the thermal compensation structure occupies a second area in a plane substantially parallel to the mechanical stack, wherein the second area is substantially the same as the first area, wherein the plurality of actuating layers includes a piezoelectric layer or a magnetic layer, the movable structure being movable in response to piezoelectric or magnetic actuation of the plurality of layers. a mechanical stack having at least one mechanical layer, the mechanical stack having a first thermal response characteristic; an actuating stack formed over the mechanical stack, the actuating stack consisting of a plurality of actuating layers of the actuating structure, the actuating layers having a second thermal response characteristic different to the first thermal response characteristic; and the movable structure further comprising a thermal compensation structure having at least one thermal compensation layer, wherein the thermal compensation structure comprises less layers than the actuating stack, and wherein the thermal compensation structure is arranged to reduce a thermal effect produced by the mechanical stack and the actuating layers which is a deflection variation of the movable structure relative to the semiconductor substrate due to a variation in operating temperature, wherein the thermal compensation structure is formed of compensation material selected according to the Coefficient of Thermal Expansion and Young's modulus of the compensation material, wherein the plurality of actuating layers occupies a first area in a plane substantially parallel to the mechanical stack and wherein the thermal compensation structure occupies a second area in a plane substantially parallel to the mechanical stack, wherein the second area is substantially the same as the first area, wherein the plurality of actuating layers includes a piezoelectric layer or a magnetic layer, the movable structure being movable in response to piezoelectric or magnetic actuation of the plurality of layers.