A semiconductor package, comprising: a package substrate having a first side and a second side opposite the first side, the package substrate comprising: a first layer of dielectric material adjacent the first side of the package substrate; a second layer of dielectric material on the first layer of dielectric material, the first layer of dielectric material being between the second layer of dielectric material and the first side of the package substrate; a ground solder ball pad adjacent the first side of the package substrate; a first via above and electrically coupled to the ground solder ball pad, the first via being in the first layer of dielectric material of the package substrate; a second via above and electrically coupled to the ground solder ball pad, the second via being in the first layer of dielectric material of the package substrate, the second via laterally spaced apart from the first via; a third via above and electrically coupled to the first via and being in the second layer of dielectric material of the package substrate; a fourth via above and electrically coupled to the second via and being in the second layer of dielectric material of the package substrate, the fourth via laterally spaced apart from the third via; wherein a first line perpendicular to the first side of the package substrate intersects the ground solder ball pad, the first via, and the third via; and wherein a second line perpendicular to the first side of the package substrate intersects the ground solder ball pad, the second via, and the fourth via; a die coupled to the second side of the package substrate; and a solder ball disposed on the ground solder ball pad. a package substrate having a first side and a second side opposite the first side, the package substrate comprising: a first layer of dielectric material adjacent the first side of the package substrate; a second layer of dielectric material on the first layer of dielectric material, the first layer of dielectric material being between the second layer of dielectric material and the first side of the package substrate; a first layer of dielectric material adjacent the first side of the package substrate; a second layer of dielectric material on the first layer of dielectric material, the first layer of dielectric material being between the second layer of dielectric material and the first side of the package substrate; a ground solder ball pad adjacent the first side of the package substrate; a first via above and electrically coupled to the ground solder ball pad, the first via being in the first layer of dielectric material of the package substrate; a second via above and electrically coupled to the ground solder ball pad, the second via being in the first layer of dielectric material of the package substrate, the second via laterally spaced apart from the first via; a third via above and electrically coupled to the first via and being in the second layer of dielectric material of the package substrate; a fourth via above and electrically coupled to the second via and being in the second layer of dielectric material of the package substrate, the fourth via laterally spaced apart from the third via; wherein a first line perpendicular to the first side of the package substrate intersects the ground solder ball pad, the first via, and the third via; and wherein a second line perpendicular to the first side of the package substrate intersects the ground solder ball pad, the second via, and the fourth via; a die coupled to the second side of the package substrate; and a solder ball disposed on the ground solder ball pad.