A method of reading out a CMOS image sensor, the CMOS image sensor comprising an array of pixels (Pxl) for sensing incident light, wherein each pixel (Pxl) comprises a largely-pinned photo-diode (Dde) arranged in reverse-bias, a first capacitance (C_low) arranged parallel to the largely-pinned photo-diode (Ddw), a switch (T_sw), a second capacitance (C_high) that can be switched in parallel with the first capacitance (C_low) by closing the switch (T_sw), and reset circuitry (T_res) for resetting a pixel potential (Vp) on the cathode of the photo diode (Dde) to a predefined voltage (V_ref), wherein each respective pixel (Pxl) can be set in a second mode by switching on the switch (T_sw) and thereby switching the second capacitance (C_high) parallel to the first capacitance (C_low), and wherein each respective pixel (Pxl) can be set in a first mode by switching off the switch (T_sw) disabling the second capacitance (C_high), the method comprising steps of: - resetting a respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low) and the second capacitance (C_high); - setting the respective pixel (Pxl) in the first mode; - collecting charge carriers generated by the incident light on the respective photo-diode (Dde), wherein the collected charge carriers reduce the pixel potential (Vp) on the respective photo-diode (Dde); - reading out the respective pixel (Pxl) while set in the first mode and -storing the pixel potential (Vp) that was read as a first potential value (V_sgl); - setting the respective pixel (Pxl) in the second mode; - reading out the respective pixel (Pxl) after the same integration while set in the second mode and storing the pixel potential (Vp) that was read as a second potential value (V_sgh); - resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high); - reading out the respective pixel (Pxl) while set in the second mode and storing the pixel potential (Vp) that was read as a third potential value (V_refh), - setting the respective pixel (Pxl) in the first mode; and - reading out the respective pixel (Pxl) while set in the first mode and storing the pixel potential (Vp) that was read as a fourth potential value (V_refl), and wherein a pinning potential of the largely-pinned photo-diode (Dde) is lower than a lower limit of the linear range of the pixel potential (Vp) such that within the linear range of the pixel (Pxl) the photo-diode (Dde) does not substantially store the charge carriers generated by the incident light. - resetting a respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low) and the second capacitance (C_high); - setting the respective pixel (Pxl) in the first mode; - collecting charge carriers generated by the incident light on the respective photo-diode (Dde), wherein the collected charge carriers reduce the pixel potential (Vp) on the respective photo-diode (Dde); - reading out the respective pixel (Pxl) while set in the first mode and -storing the pixel potential (Vp) that was read as a first potential value (V_sgl); - setting the respective pixel (Pxl) in the second mode; - reading out the respective pixel (Pxl) after the same integration while set in the second mode and storing the pixel potential (Vp) that was read as a second potential value (V_sgh); - resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high); - reading out the respective pixel (Pxl) while set in the second mode and storing the pixel potential (Vp) that was read as a third potential value (V_refh), - setting the respective pixel (Pxl) in the first mode; and - reading out the respective pixel (Pxl) while set in the first mode and storing the pixel potential (Vp) that was read as a fourth potential value (V_refl), and