A resistive touch sensor system comprising: (a) a touch sensor array, TSA,; (b) an array column driver, ACD,; (c) a column switching register, CSR,; (d) a column driving source, CDS, (0521, 0523, 0525); (e) an array row sensor, ARS,; (f) a row switching register, RSR,; (g) an analog to digital converter, ADC,; and (h) a computing control device, CCD,; wherein: said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows; said VIA comprises a first layer having a top side and a bottom side; said VIA comprises a second layer having a top side and a bottom side; said second layer comprises exposed coplanar drive electrodes; said second layer further comprises coplanar sense electrodes, whereby the drive and sense electrodes form row/column intersections; said first layer comprises a force sensing material whereby between each row/column electrode intersection is a force sensing element comprising a variable impedance element which creates a variable resistance; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said drive electrodes; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said sense electrodes; said ACD is configured to select said IIC within said TSA based on said CSR; said ACD is configured to electrically drive said selected IIC using said CDS (0521, 0523, 0525); said CDS (0521, 0523, 0525) is configured to power one or more of said drive electrodes while driving one or more of said drive electrodes to ground potential; said ARS is configured to select said IIR within said TSA based on said RSR while simultaneously driving one or more of said sense electrodes to ground potential; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of the variable impedance elements within said VIA, where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA, a current divider formed between the rows of said VIA, and the state of the impedance element, to produce a sensed current for a given row-column intersection with said VIA; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure. (a) a touch sensor array, TSA,; (b) an array column driver, ACD,; (c) a column switching register, CSR,; (d) a column driving source, CDS, (0521, 0523, 0525); (e) an array row sensor, ARS,; (f) a row switching register, RSR,; (g) an analog to digital converter, ADC,; and (h) a computing control device, CCD,; said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows; said VIA comprises a first layer having a top side and a bottom side; said VIA comprises a second layer having a top side and a bottom side; said second layer comprises exposed coplanar drive electrodes; said second layer further comprises coplanar sense electrodes, whereby the drive and sense electrodes form row/column intersections; said first layer comprises a force sensing material whereby between each row/column electrode intersection is a force sensing element comprising a variable impedance element which creates a variable resistance; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said drive electrodes; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said sense electrodes; said ACD is configured to select said IIC within said TSA based on said CSR; said ACD is configured to electrically drive said selected IIC using said CDS (0521, 0523, 0525); said CDS (0521, 0523, 0525) is configured to power one or more of said drive electrodes while driving one or more of said drive electrodes to ground potential; said ARS is configured to select said IIR within said TSA based on said RSR while simultaneously driving one or more of said sense electrodes to ground potential; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of the variable impedance elements within said VIA, where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA, a current divider formed between the rows of said VIA, and the state of the impedance element, to produce a sensed current for a given row-column intersection with said VIA; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure.