A lamp device including a reflecting unit that includes a first reflecting module and a second reflecting module, and a light emitting unit that is connected to the reflecting unit, wherein: said first reflecting module is configured to reflect light towards said second reflecting module and has a reflectivity that is substantially over 70% for light of wavelength ranging from 550 nm to 800 nm; said second reflecting module is configured to reflect light towards said first reflecting module and has a reflectivity that substantially ranges from 50% to 75% for light of wavelength ranging from 460 nm to 700 nm; said light emitting unit is configured to emit light toward the reflecting unit in such a way that at least a part of the light emitted by said light emitting unit is reflected from one of said first reflecting module and said second reflecting module; said second reflecting module includes a second support member that is light-transmissible and coupled to said first reflecting module, and a reflecting film that is deposited on said second support member and opposite to said first reflecting module, said reflecting film having a reflectivity substantially between 50% and 75% for light of wavelength ranging from 460 nm to 700 nm; said reflecting film includes a first deposited layer formed on said second support member, and second, third, fourth, fifth, sixth, seventh, eighth and nine deposited layers (372, 373, 374, 375, 376, 377, 378, 379) stacked in order on said first deposited layer in a direction away from said second support member, each of said first, third, fifth, seventh and ninth deposited layers (371, 373, 375, 377, 379) having a refractive index of 2.28, each of said second, fourth, sixth, and eighth deposited layers (272, 274, 276, 278) having a refractive index of 1.45; and said lamp device is characterized in that said first deposited layer has a thickness of 28.6 nm, said second deposited layer having a thickness of 19.5 nm, said third deposited layer having a thickness of 64.1 nm, said fourth deposited layer having a thickness of 165.0 nm, said fifth deposited layer having a thickness of 102.6 nm, said sixth deposited layer having a thickness of 94.4 nm, said seventh deposited layer having a thickness of 60.8 nm, said eighth deposited layer having a thickness of 96.7 nm, said ninth deposited layer having a thickness of 60.0 nm. said first reflecting module is configured to reflect light towards said second reflecting module and has a reflectivity that is substantially over 70% for light of wavelength ranging from 550 nm to 800 nm; said second reflecting module is configured to reflect light towards said first reflecting module and has a reflectivity that substantially ranges from 50% to 75% for light of wavelength ranging from 460 nm to 700 nm; said light emitting unit is configured to emit light toward the reflecting unit in such a way that at least a part of the light emitted by said light emitting unit is reflected from one of said first reflecting module and said second reflecting module; said second reflecting module includes a second support member that is light-transmissible and coupled to said first reflecting module, and a reflecting film that is deposited on said second support member and opposite to said first reflecting module, said reflecting film having a reflectivity substantially between 50% and 75% for light of wavelength ranging from 460 nm to 700 nm; said reflecting film includes a first deposited layer formed on said second support member, and second, third, fourth, fifth, sixth, seventh, eighth and nine deposited layers (372, 373, 374, 375, 376, 377, 378, 379) stacked in order on said first deposited layer in a direction away from said second support member, each of said first, third, fifth, seventh and ninth deposited layers (371, 373, 375, 377, 379) having a refractive index of 2.28, each of said second, fourth, sixth, and eighth deposited layers (272, 274, 276, 278) having a refractive index of 1.45; and said lamp device is characterized in that said first deposited layer has a thickness of 28.6 nm, said second deposited layer having a thickness of 19.5 nm, said third deposited layer having a thickness of 64.1 nm, said fourth deposited layer having a thickness of 165.0 nm, said fifth deposited layer having a thickness of 102.6 nm, said sixth deposited layer having a thickness of 94.4 nm, said seventh deposited layer having a thickness of 60.8 nm, said eighth deposited layer having a thickness of 96.7 nm, said ninth deposited layer having a thickness of 60.0 nm.