A CMOS imaging sensor for detecting a time occurrence of a single light pulse having a given pulse durationτ, comprising: • pixels, each pixel having a pixel structure comprising at least: - a photodetector (PhD) operating as a current source, - a nonlinear resistor connected and operated continuously between a voltage supplying node (V DD-P) of the pixel and a sense node, - the sense node being a capacitive sense node having a capacitance, the nonlinear resistor and the capacitance of the sense node are configured to operate as a low pass filter and to perform current to voltage conversion in a low frequency range and integration in a high frequency range; • a control circuit for controlling a measurement phase in at least a selected pixel for measuring a time occurrence of a single light pulse reaching the photodetector in the selected pixel, the control circuit configured to - implement continuous current to voltage conversion inside the selected pixel through the nonlinear resistor, and - convert, by the nonlinear resistor and the capacitance, a signal received from the photodetector to produce a voltage signal (V SN) at the sense node that has a main signal component comprising at least a pulse location information in the high frequency range, and a noise component mainly concentrated in the low frequency range spaced apart from said high frequency range, and • a readout circuitry of a voltage signal from the sense node of the selected pixel, which comprises at least: - an analog to digital converter applying a high sampling time in respect of the pulse width duration,and - filtering means configured to apply continuously at least one of a band pass or high pass filter, before or after analog to digital conversion, having the effect of increasing the signal to noise ratio in at least a frequency band around the main signal component to recover at least the pulse location information. • pixels, each pixel having a pixel structure comprising at least: - a photodetector (PhD) operating as a current source, - a nonlinear resistor connected and operated continuously between a voltage supplying node (V DD-P) of the pixel and a sense node, - the sense node being a capacitive sense node having a capacitance, the nonlinear resistor and the capacitance of the sense node are configured to operate as a low pass filter and to perform current to voltage conversion in a low frequency range and integration in a high frequency range; - a photodetector (PhD) operating as a current source, - a nonlinear resistor connected and operated continuously between a voltage supplying node (V DD-P) of the pixel and a sense node, - the sense node being a capacitive sense node having a capacitance, the nonlinear resistor and the capacitance of the sense node are configured to operate as a low pass filter and to perform current to voltage conversion in a low frequency range and integration in a high frequency range; • a control circuit for controlling a measurement phase in at least a selected pixel for measuring a time occurrence of a single light pulse reaching the photodetector in the selected pixel, the control circuit configured to - implement continuous current to voltage conversion inside the selected pixel through the nonlinear resistor, and - convert, by the nonlinear resistor and the capacitance, a signal received from the photodetector to produce a voltage signal (V SN) at the sense node that has a main signal component comprising at least a pulse location information in the high frequency range, and a noise component mainly concentrated in the low frequency range spaced apart from said high frequency range, and - implement continuous current to voltage conversion inside the selected pixel through the nonlinear resistor, and - convert, by the nonlinear resistor and the capacitance, a signal received from the photodetector to produce a voltage signal (V SN) at the sense node that has a main signal component comprising at least a pulse location information in the high frequency range, and a noise component mainly concentrated in the low frequency range spaced apart from said high frequency range, and • a readout circuitry of a voltage signal from the sense node of the selected pixel, which comprises at least: - an analog to digital converter applying a high sampling time in respect of the pulse width duration,and - filtering means configured to apply continuously at least one of a band pass or high pass filter, before or after analog to digital conversion, having the effect of increasing the signal to noise ratio in at least a frequency band around the main signal component to recover at least the pulse location information. - an analog to digital converter applying a high sampling time in respect of the pulse width duration,and - filtering means configured to apply continuously at least one of a band pass or high pass filter, before or after analog to digital conversion, having the effect of increasing the signal to noise ratio in at least a frequency band around the main signal component to recover at least the pulse location information.