Apparatus for generating a binary numerical sequence, the apparatus including: two or more memristors (111, 112), wherein the apparatus is configured to apply a first write voltage or a second write voltage, different from the first write voltage, as a write voltage to each of the two or more memristors (111, 112), and/or to apply a first read voltage or a second read voltage, different from the first read voltage, as a read voltage to each of the two or more memristors (111, 112), wherein each memristor of the two or more memristors (111, 112) is configured to output, in dependence on the write voltage applied to the memristor and/or in dependence on the read voltage applied to the memristor, an output voltage with a first random or pseudo-random voltage value from a first voltage value range or with a second random or pseudo-random voltage value from a second voltage value range; and one or more comparators, wherein each of the one or more comparators is assigned to precisely one of the two or more memristors (111, 112); wherein each comparator of the one or more comparators is configured to output a binary output value in dependence on a comparison between the output voltage of the one of the two or more memristors (111, 112) having assigned thereto the comparator, and a threshold voltage, and wherein the apparatus is configured to generate the binary numerical sequence in dependence on the binary output value of each of the one or more comparators, wherein each comparator of the one or more comparators is configured to perform the comparison between the output voltage of the one of the two or more memristors (111, 112) being assigned to the comparator, and the same threshold voltage, characterized in that each of the one or more comparators is configured to use as the threshold voltage the output voltage of one of the two or more memristors (111, 112). two or more memristors (111, 112), wherein the apparatus is configured to apply a first write voltage or a second write voltage, different from the first write voltage, as a write voltage to each of the two or more memristors (111, 112), and/or to apply a first read voltage or a second read voltage, different from the first read voltage, as a read voltage to each of the two or more memristors (111, 112), wherein each memristor of the two or more memristors (111, 112) is configured to output, in dependence on the write voltage applied to the memristor and/or in dependence on the read voltage applied to the memristor, an output voltage with a first random or pseudo-random voltage value from a first voltage value range or with a second random or pseudo-random voltage value from a second voltage value range; and one or more comparators, wherein each of the one or more comparators is assigned to precisely one of the two or more memristors (111, 112); wherein each comparator of the one or more comparators is configured to output a binary output value in dependence on a comparison between the output voltage of the one of the two or more memristors (111, 112) having assigned thereto the comparator, and a threshold voltage, and wherein the apparatus is configured to generate the binary numerical sequence in dependence on the binary output value of each of the one or more comparators, wherein each comparator of the one or more comparators is configured to perform the comparison between the output voltage of the one of the two or more memristors (111, 112) being assigned to the comparator, and the same threshold voltage, characterized in that each of the one or more comparators is configured to use as the threshold voltage the output voltage of one of the two or more memristors (111, 112).