A TOF distance sensor - for detecting a distance to an object - by reception of radiation reflected from the object - from a radiation source modulated with a modulation frequency - comprising a pixel matrix for capturing a pixel image - of demodulation pixels - for rear-side reception of the radiation with in each case - a conversion region - for generating charge carriers from the received radiation, - a separation device - for separating the charge carriers by modulation frequency, - a stop - for partitioning the conversion region from the separation device in respect of the charge carriers and - comprising a stop aperture - for passage of the charge carriers from the conversion region into the separation device, - at least two demodulation pixels in each case forming a common stop aperture, characterised in that - the separation device comprises a drift gate for attracting the charge carriers from the conversion region into the separation region and - in that the demodulation pixels which form a common stop aperture - in each case form at least one common and one individually assigned drift gate, wherein the individually assigned drift gate 71 overlaps the common drift gate in electrically isolated manner, and the individually assigned and common drift gates act as a single drift gate, wherein a higher potential is applied to the individually assigned drift gate than to the common drift gate, such that photoelectrons are guided onward from the common to the individually assigned drift gate. - for detecting a distance to an object - by reception of radiation reflected from the object - from a radiation source modulated with a modulation frequency - by reception of radiation reflected from the object - from a radiation source modulated with a modulation frequency - comprising a pixel matrix for capturing a pixel image - of demodulation pixels - for rear-side reception of the radiation with in each case - a conversion region - for generating charge carriers from the received radiation, - a separation device - for separating the charge carriers by modulation frequency, - a stop - for partitioning the conversion region from the separation device in respect of the charge carriers and - comprising a stop aperture - for passage of the charge carriers from the conversion region into the separation device, - of demodulation pixels - for rear-side reception of the radiation with in each case - a conversion region - for generating charge carriers from the received radiation, - a separation device - for separating the charge carriers by modulation frequency, - a stop - for partitioning the conversion region from the separation device in respect of the charge carriers and - comprising a stop aperture - for passage of the charge carriers from the conversion region into the separation device, - for rear-side reception of the radiation with in each case - a conversion region - for generating charge carriers from the received radiation, - for generating charge carriers from the received radiation, - a separation device - for separating the charge carriers by modulation frequency, - for separating the charge carriers by modulation frequency, - a stop - for partitioning the conversion region from the separation device in respect of the charge carriers and - for partitioning the conversion region from the separation device in respect of the charge carriers and - comprising a stop aperture - for passage of the charge carriers from the conversion region into the separation device, - for passage of the charge carriers from the conversion region into the separation device, - at least two demodulation pixels in each case forming a common stop aperture, characterised in that - the separation device comprises a drift gate for attracting the charge carriers from the conversion region into the separation region and - in that the demodulation pixels which form a common stop aperture - in each case form at least one common and one individually assigned drift gate, wherein the individually assigned drift gate 71 overlaps the common drift gate in electrically isolated manner, and the individually assigned and common drift gates act as a single drift gate, wherein a higher potential is applied to the individually assigned drift gate than to the common drift gate, such that photoelectrons are guided onward from the common to the individually assigned drift gate. - the separation device comprises a drift gate for attracting the charge carriers from the conversion region into the separation region and - in that the demodulation pixels which form a common stop aperture - in each case form at least one common and one individually assigned drift gate, wherein the individually assigned drift gate 71 overlaps the common drift gate in electrically isolated manner, and the individually assigned and common drift gates act as a single drift gate, wherein a higher potential is applied to the individually assigned drift gate than to the common drift gate, such that photoelectrons are guided onward from the common to the individually assigned drift gate. - in each case form at least one common and one individually assigned drift gate, wherein the individually assigned drift gate 71 overlaps the common drift gate in electrically isolated manner, and the individually assigned and common drift gates act as a single drift gate, wherein a higher potential is applied to the individually assigned drift gate than to the common drift gate, such that photoelectrons are guided onward from the common to the individually assigned drift gate.