A light emitting device comprising a flip chip light emitting diode, the flip chip light emitting diode comprising: a light-transmissive substrate comprising a patterned surface including at least one of (a) a plurality of recessed features or (b) a plurality of raised features; a plurality of semiconductor layers adjacent to the patterned surface, the plurality of semiconductor layers including a first semiconductor layer comprising doping of a first type and a second semiconductor layer comprising doping of a second type, wherein a light emitting active region is arranged between the first semiconductor layer and the second semiconductor layer; a multi-layer reflector arranged proximate to the plurality of semiconductor layers, the multi-layer reflector comprising a metal reflector layer and a dielectric reflector layer, wherein the dielectric reflector layer is arranged between the metal reflector layer and the plurality of semiconductor layers; a passivation layer arranged between the metal reflector layer and (i) a first electrical contact and (ii) a second electrical contact, wherein the first electrical contact is arranged in conductive electrical communication with the first semiconductor layer, and the second electrical contact is arranged in conductive electrical communication with the second semiconductor layer; and an adhesion layer between the metal reflector layer and the dielectric reflector layer; wherein the plurality of semiconductor layers forms a mesa, a peripheral portion of the plurality of semiconductor layers forms at least one recess laterally bounding the mesa, the multi-layer reflector is arranged over at least 90% of a major surface of the mesa and is arranged between the mesa and the passivation layer, and the at least one recess comprises a peripheral portion of the dielectric reflector layer that bounds peripheral portions of the second semiconductor layer, the light emitting active region, and a segment of the first semiconductor layer. a light-transmissive substrate comprising a patterned surface including at least one of (a) a plurality of recessed features or (b) a plurality of raised features; a plurality of semiconductor layers adjacent to the patterned surface, the plurality of semiconductor layers including a first semiconductor layer comprising doping of a first type and a second semiconductor layer comprising doping of a second type, wherein a light emitting active region is arranged between the first semiconductor layer and the second semiconductor layer; a multi-layer reflector arranged proximate to the plurality of semiconductor layers, the multi-layer reflector comprising a metal reflector layer and a dielectric reflector layer, wherein the dielectric reflector layer is arranged between the metal reflector layer and the plurality of semiconductor layers; a passivation layer arranged between the metal reflector layer and (i) a first electrical contact and (ii) a second electrical contact, wherein the first electrical contact is arranged in conductive electrical communication with the first semiconductor layer, and the second electrical contact is arranged in conductive electrical communication with the second semiconductor layer; and an adhesion layer between the metal reflector layer and the dielectric reflector layer; wherein the plurality of semiconductor layers forms a mesa, a peripheral portion of the plurality of semiconductor layers forms at least one recess laterally bounding the mesa, the multi-layer reflector is arranged over at least 90% of a major surface of the mesa and is arranged between the mesa and the passivation layer, and the at least one recess comprises a peripheral portion of the dielectric reflector layer that bounds peripheral portions of the second semiconductor layer, the light emitting active region, and a segment of the first semiconductor layer.