mhurhangee/ep-ind-claims huggingface dataset:
Process for the stereoselective preparation of the compound of formula, optionally in the form of the tautomers thereof, wherein n denotes a number from 1.4 to 1.7, optionally in the form of the tautomers thereof. characterised in that the process comprises reaction steps to, wherein is the reaction of 1,4-cyclohexanedione-mono-ethyleneketal to form a compound of formula is the reaction of a compound of formula to form the compound of formula is the reaction of a compound of formula to form the compound of formula is the reaction of a compound of formula with a protective group reagent to form the compound of formula is the reduction of a compound of formula to form the compound of formula is the reaction of a compound of formula to form a compound of formula is the reaction of a compound of formula with a compound of formula to form a compound of formula is the reaction of a compound of formula to form a compound of formula or its tautomeric form, is the chlorination of the compound of formula or to form a compound of formula + is the reaction of the compound of formula with 3-chloro-2-fluoraniline and cleaving of a protective group to form a compound of formula or is the cleaving of another protective group to form the compound of formula is the reaction of the compound of formula with fumaric acid to form a compound of formula, optionally in the form of the tautomers thereof while process steps to take place successively in the sequence specified. is the reaction of 1,4-cyclohexanedione-mono-ethyleneketal to form a compound of formula is the reaction of a compound of formula to form the compound of formula is the reaction of a compound of formula to form the compound of formula is the reaction of a compound of formula with a protective group reagent to form the compound of formula is the reduction of a compound of formula to form the compound of formula is the reaction of a compound of formula to form a compound of formula is the reaction of a compound of formula with a compound of formula to form a compound of formula is the reaction of a compound of formula to form a compound of formula or its tautomeric form, is the chlorination of the compound of formula or to form a compound of formula + is the reaction of the compound of formula with 3-chloro-2-fluoraniline and cleaving of a protective group to form a compound of formula or is the cleaving of another protective group to form the compound of formula is the reaction of the compound of formula with fumaric acid to form a compound of formula, optionally in the form of the tautomers thereof while process steps to take place successively in the sequence specified.
A thermal protection device for an integrated power MOSFET transistor composed of interdigitated array of source regions and drain regions defined in a well region of the monocrystalline silicon substrate, and gate structures connected in common overhanging channel regions defined between adjacent source and drain regions, and comprising a temperature sensor and a comparator, integrated on said substrate outside said well region, comparing the voltage present on said sensor with a threshold voltage for generating an overtemperature flag signal usable for turning off the overheated power transistor, characterized in that it comprises means for forcing a fixed current through a first small number of source regions of said interdigitated array separately connected from the other source regions of the power transistor; a second small number of source regions equal or smaller than said first small number of source regions to form an interdigitated array of source regions and drain regions with overhanging gate structures, integrated outside said well region in a location near said comparator, having a gate electrode connected in common to the gate electrode of said overhanging gate structures of the power MOSFET; means for forcing a second fixed current (Is1*m/n) proportional to said first current through said second number of source regions; said comparator being connected to said source regions for comparing the voltage difference between said first small number of separately connected source regions inside said well region and said second small number of separately connected source regions outside said well region with a threshold voltage (Vcomp).
A method for performing a management of a multi-subscription SIM module, said multi-subscription SIM module comprising at least one memory adapted to store at least a first and a second profile associated with a respective first and a second mobile network operator, said memory comprising a volatile portion, said operation of storing including installing or updating profiles (P1, P2) by downloading one or more downloaded profiles (Pd) from a remote host, said management including selecting one or more enabled profiles (Ps) comprising an application to be executed and allocating a partition of the volatile portion of the memory to said one or more enabled profile (Ps), characterized in that said method further includes the operations of: dividing the area of the volatile memory in a partition for the operative system, a partition for the each of the one or more enabled profiles and a partition for a downloaded profile, said partition for the enabled profile and partition for a downloaded profile having the same size, allocating the partition for the enabled profile to the enabled profile (Ps), maintaining the partition for a downloaded profile not accessible, during a profile download operation, accessing only the partition for a downloaded profile allocating said partition for a downloaded profile to the downloaded profile (Pd), during a profile change operation swapping the downloading profile (Pd) from the partition for a downloaded profile to one of the partitions for the enabled profile. dividing the area of the volatile memory in a partition for the operative system, a partition for the each of the one or more enabled profiles and a partition for a downloaded profile, said partition for the enabled profile and partition for a downloaded profile having the same size, allocating the partition for the enabled profile to the enabled profile (Ps), maintaining the partition for a downloaded profile not accessible, during a profile download operation, accessing only the partition for a downloaded profile allocating said partition for a downloaded profile to the downloaded profile (Pd), during a profile change operation swapping the downloading profile (Pd) from the partition for a downloaded profile to one of the partitions for the enabled profile.
An ultrasound treatment appliance comprising at least a surgical handpiece, an ultrasound insert, and an ultrasound generator, the handpiece including a piezoelectric transducer constituted by a distal portion having the ultrasound insert fastened thereto and a piezoelectric motor connected to the ultrasound generator and mechanically coupled to the distal portion, said piezoelectric motor transmitting ultrasound waves to the insert, which waves are defined as a function of current and voltage setpoint signals (S CIU) delivered by the ultrasound generator to the piezoelectric motor, said ultrasound treatment appliance further comprising a module for controlling the amplitudes of the setpoint signals and configured to: - calculate a variation in the frequency (Δ F) and the impedance (Δz) of the control signal in the piezoelectric transducer; - compare the impedance variation of the ultrasound signal with a predetermined impedance variation value (Δ Zdet); - compare the variation in the frequency of the ultrasound signal with a predetermined frequency variation value (Δ Fdet); - increase the amplitudes of the current and voltage setpoint signals (S CIU) delivered by the ultrasound generator when the calculated variation in the impedance (Δz) of the ultrasound signal is greater than the predetermined impedance variation value (Δ Zdet) and when the calculated variation in the frequency (Δ F) of the ultrasound signal is greater than the predetermined frequency variation value (Δ Fdet); and - decrease the amplitudes of the current and voltage setpoint signals (S CIU) delivered by the ultrasound generator when the calculated variation in the impedance (Δz) of the ultrasound signal is greater than the predetermined impedance variation value (Δ Zdet) and when the calculated variation in the frequency (Δ F) of the ultrasound signal is less than the predetermined frequency variation value (Δ Fdet). - calculate a variation in the frequency (Δ F) and the impedance (Δz) of the control signal in the piezoelectric transducer; - compare the impedance variation of the ultrasound signal with a predetermined impedance variation value (Δ Zdet); - compare the variation in the frequency of the ultrasound signal with a predetermined frequency variation value (Δ Fdet); - increase the amplitudes of the current and voltage setpoint signals (S CIU) delivered by the ultrasound generator when the calculated variation in the impedance (Δz) of the ultrasound signal is greater than the predetermined impedance variation value (Δ Zdet) and when the calculated variation in the frequency (Δ F) of the ultrasound signal is greater than the predetermined frequency variation value (Δ Fdet); and - decrease the amplitudes of the current and voltage setpoint signals (S CIU) delivered by the ultrasound generator when the calculated variation in the impedance (Δz) of the ultrasound signal is greater than the predetermined impedance variation value (Δ Zdet) and when the calculated variation in the frequency (Δ F) of the ultrasound signal is less than the predetermined frequency variation value (Δ Fdet).
A superconducting coupling device comprising: a resonator structure, the resonator structure having a first end that is capacitively coupled to a first qubit (312A, 412A) and a second end that is capacitively coupled to a second qubit (312B, 412B); a gate voltage-tunable electron system (206, 414) coupled to the resonator structure; and a gate (204, 310, 402) with gate material (610, 712, 812, 908, 1010) deposited on an insulator layer (608, 710, 810, 906, 1008) positioned proximal to a portion of the gate voltage-tunable electron system (206, 414), the gate voltage-tunable electron system (206, 414) and the gate (204, 310, 402) configured to interrupt the resonator structure at one or more predetermined locations forming a switch, the gate (204, 310, 402) configured to receive a gate voltage and vary an inductance of the gate voltage-tunable electron system (206, 414) based upon the gate voltage, the varying of the inductance inducing the resonator structure to vary a strength of coupling between the first qubit (312A, 412A) and the second qubit (312B, 412B), wherein the resonator structure, the gate, voltage-tunable electron system (206, 414) and the gate (204, 310, 402) with the gate material (610, 712, 812, 908, 1010) deposited on the insulator layer (608, 710, 810, 906, 1008) form a Josephson junction switch (208, 314, 404, 508, 1112). a resonator structure, the resonator structure having a first end that is capacitively coupled to a first qubit (312A, 412A) and a second end that is capacitively coupled to a second qubit (312B, 412B); a gate voltage-tunable electron system (206, 414) coupled to the resonator structure; and a gate (204, 310, 402) with gate material (610, 712, 812, 908, 1010) deposited on an insulator layer (608, 710, 810, 906, 1008) positioned proximal to a portion of the gate voltage-tunable electron system (206, 414), the gate voltage-tunable electron system (206, 414) and the gate (204, 310, 402) configured to interrupt the resonator structure at one or more predetermined locations forming a switch, the gate (204, 310, 402) configured to receive a gate voltage and vary an inductance of the gate voltage-tunable electron system (206, 414) based upon the gate voltage, the varying of the inductance inducing the resonator structure to vary a strength of coupling between the first qubit (312A, 412A) and the second qubit (312B, 412B), wherein the resonator structure, the gate, voltage-tunable electron system (206, 414) and the gate (204, 310, 402) with the gate material (610, 712, 812, 908, 1010) deposited on the insulator layer (608, 710, 810, 906, 1008) form a Josephson junction switch (208, 314, 404, 508, 1112).
A system to control spatial, spectral, polarization and/or temporal distribution of light, the system comprising: a light source configured to generate a light; a spatial light modulator having a variable mask to modify one or more properties of the light generated by the light source; a medium having a proximal end to receive a modified light from the spatial light modulator and guide the modified light to a distal end; a detection system (135, 140, 145, 175) to evaluate the one or more properties produced by the modified light at the distal end of the medium; and a control system communicably coupled to the spatial light modulator and the detection system, configured to: evaluate the one or more properties produced by the modified light at the distal end of the medium; generate an updated mask that enhances the one or more properties of the modified light at the distal end of the medium; and transmit a signal to the spatial light modulator to implement the updated mask, characterized in that the control system controls at least one of the following properties: a polarization of an output light and a pulse shape and duration of the output light. a light source configured to generate a light; a spatial light modulator having a variable mask to modify one or more properties of the light generated by the light source; a medium having a proximal end to receive a modified light from the spatial light modulator and guide the modified light to a distal end; a detection system (135, 140, 145, 175) to evaluate the one or more properties produced by the modified light at the distal end of the medium; and a control system communicably coupled to the spatial light modulator and the detection system, configured to: evaluate the one or more properties produced by the modified light at the distal end of the medium; generate an updated mask that enhances the one or more properties of the modified light at the distal end of the medium; and transmit a signal to the spatial light modulator to implement the updated mask, evaluate the one or more properties produced by the modified light at the distal end of the medium; generate an updated mask that enhances the one or more properties of the modified light at the distal end of the medium; and transmit a signal to the spatial light modulator to implement the updated mask, characterized in that the control system controls at least one of the following properties: a polarization of an output light and a pulse shape and duration of the output light.
A cooler for cooling particulate material which has been subjected to heat treatment in an industrial kiln, such as a rotary kiln for manufacturing cement clinker, which cooler comprises an inlet, an outlet, end walls, side walls, a bottom and a ceiling, at least three reciprocating supporting lanes for receiving, supporting and transporting the material to be cooled, the lanes are moving following the walking floor principles, cooling gas is injected upwards between the bottom and the lanes, the cooling gas is going through grate plates in the lanes, the cooling gas is then passing through the material and where at a distance from the inlet a heat recuperation boarder is established such that air on the inlet side of the heat recuperation boarder will return to the kiln CHARACTERIZED IN THAT elements extend upwards from an upper surface of the supporting lanes, where the elements on a supporting lane are spaced creating a grate plate zone G, which element has an upper part L which is tilted towards the outlet end of the cooler, which upper part has a length L which is more than 1/40 of G and where the upper part L has an angle alfa which is more than 5 deg. and less than 80 deg. between the upper part L and horizontal.
Method for fixing active plant ingredients on a surface region of a non-metallic substrate, characterized in that a plant extract is applied to the surface region of the substrate and subsequently the surface region of the substrate is treated with low-energy electrons.
Valve assembly having a first and a second consumer port (A; B) for the connection of a hydraulic consumer, a pump port for the connection of a pump, a tank port for the connection of a tank, and an LS port for the connection to a delivery pressure regulator of the pump, wherein a continuously adjustable dosing throttle is provided, a pressure balance being connected in series therewith on the pump side and being connected to the pump port such that a first pressure results between the dosing throttle and the pressure balance, wherein a damping throttle is connected in series with the dosing throttle on the tank side such that a second pressure results between the dosing throttle and the damping throttle, said second pressure being connected to one of the consumer ports (A; B), wherein a first pressure-limiting valve with an adjustable activation pressure is connected in series with the damping throttle on the tank side such that a third pressure results between the damping throttle and the first pressure-limiting valve, said third pressure being connected at least indirectly to the LS port, wherein the first and third pressures (41; 43) are connected to the pressure balance such that the pressure balance performs an adjustment to a first predefined pressure difference between the first and third pressures (41; 43), wherein the second pressure is connected to a second pressure-limiting valve, the activation pressure of which is adjustable, characterized in that the activation pressure of the second pressure-limiting valve is able to be adjusted hydraulically by means of the third pressure such that it is higher than the third pressure by a predefined second pressure difference.
Device for detecting a conveying rate at which a liquid material in the form of pig iron is filled from a pivotable starting vessel into a metallurgical target vessel, comprising means for determining an amount of liquid material which is filled into the starting vessel and means for detecting an amount of liquid material which is let out by pivotation of the starting vessel in the direction of the target vessel, characterised in that provided between the starting vessel and the target vessel is a feed channel made of refractory material and the means for detecting an amount of liquid material which is let out by pivotation of the starting vessel in the direction of the target vessel comprise at least one measurement loop for determination of the filling height by induced electrical fields, the loop being integrated in a wall material of the feed channel.
A friction clutch cover having a body portion in circular form comprising an outer wall and an inner wall facing an inner gap provided at the center thereof, in order to be used in frictional clutches positioned between the engine output and the transmission shaft in tractors, characterized by comprising at least one channel extending from the inner wall towards the outer wall inside the body portion, wherein pluralities of channels are provided inside the body portion such that there is a specific distance in between, and wherein each channel comprises one each symmetry channels which pass through the center of the body portion and provided in a symmetric manner with respect to the symmetry axes (a) which separate the body portion into four regions.
Method for monitoring the performance of a vectoring group of telecommunication lines, characterized in that the method comprises - detecting (55, 59) depending on at least one first parameter (G ij, L) that characterizes crosstalk caused by a disturbing line of the vectoring group to a victim line of the vectoring group that an irregular event related to vectoring has occurred at an instant of time (t 1, t 2, t 3, t 4); - deciding on whether or not a transmission performance of the victim line decreases within a time interval (ΔT), the time interval (ΔT) including the instant of time (t); and - determining (63, 67) depending on the deciding on whether or not the performance decrease of the victim line is caused by the irregular event. - detecting (55, 59) depending on at least one first parameter (G ij, L) that characterizes crosstalk caused by a disturbing line of the vectoring group to a victim line of the vectoring group that an irregular event related to vectoring has occurred at an instant of time (t 1, t 2, t 3, t 4); - deciding on whether or not a transmission performance of the victim line decreases within a time interval (ΔT), the time interval (ΔT) including the instant of time (t); and - determining (63, 67) depending on the deciding on whether or not the performance decrease of the victim line is caused by the irregular event.
Surgical swab that comprises in its constitution, a) Two or more outer layers of non-woven fabric; b) an inner layer of textile polymer net comprising a polymer selected from: i. elastane; ii. polyamide; and iii. polyamide and polyester; iv. polyamide and cotton. a) Two or more outer layers of non-woven fabric; b) an inner layer of textile polymer net comprising a polymer selected from: i. elastane; ii. polyamide; and iii. polyamide and polyester; iv. polyamide and cotton. i. elastane; ii. polyamide; and iii. polyamide and polyester; iv. polyamide and cotton.