An imaging device, comprising: a first section including: a first semiconductor substrate; at least one first photoelectric conversion region disposed in the first semiconductor substrate; a first floating diffusion coupled to the at least one first photoelectric conversion region; a first bonding portion; a first wiring electrically connected between the first floating diffusion and the first bonding portion; at least one second photoelectric conversion region disposed in the first semiconductor substrate; a second floating diffusion coupled to the at least one second photoelectric conversion region; a second bonding portion; a second wiring electrically connected between the second floating diffusion and the second bonding portion; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage; and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring; and a second section, including a second semiconductor substrate, bonded to the first section via the first and second bonding portions and including readout circuitry coupled to the first bonding portion and the second bonding portion. a first section including: a first semiconductor substrate; at least one first photoelectric conversion region disposed in the first semiconductor substrate; a first floating diffusion coupled to the at least one first photoelectric conversion region; a first bonding portion; a first wiring electrically connected between the first floating diffusion and the first bonding portion; at least one second photoelectric conversion region disposed in the first semiconductor substrate; a second floating diffusion coupled to the at least one second photoelectric conversion region; a second bonding portion; a second wiring electrically connected between the second floating diffusion and the second bonding portion; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage; and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring; and a first semiconductor substrate; at least one first photoelectric conversion region disposed in the first semiconductor substrate; a first floating diffusion coupled to the at least one first photoelectric conversion region; a first bonding portion; a first wiring electrically connected between the first floating diffusion and the first bonding portion; at least one second photoelectric conversion region disposed in the first semiconductor substrate; a second floating diffusion coupled to the at least one second photoelectric conversion region; a second bonding portion; a second wiring electrically connected between the second floating diffusion and the second bonding portion; a well region of the first semiconductor substrate coupled to a node that receives a reference voltage; and a third wiring coupled to the well region and that extends in a same direction as the first and second wirings at a location that is between the first wiring and the second wiring; and a second section, including a second semiconductor substrate, bonded to the first section via the first and second bonding portions and including readout circuitry coupled to the first bonding portion and the second bonding portion.