A method for storing data, comprising: writing a frag, corresponding to a finite amount of user's data, to a first data page in vaulted memory, wherein the first data page comprises a first table of contents bit and a first physical address, wherein a designation of the first data page is an open data page, wherein the first physical address corresponds to a first location in a solid state memory module, wherein the TOC bit indicates that a page holds TOC information on data frags, depending on the value of the bit, and the open pages are a portion of memory that is used to store, either data frags or TOC entries prior to being written to the appropriate solid state memory module; writing a first table of contents entry for the frag to an open TOC page in the vaulted memory, wherein the open TOC page comprises a second TOC bit, a second physical address, and a second TE, wherein the second physical address corresponds to a second location in the solid state memory module; receiving an event notification of a power failure for a storage module in which the vaulted memory is located; in response to the event notification: writing the frag to a page in the solid state memory module in the storage module, wherein the page is not associated with the first physical address; and writing the first TE and the second TE to a second page in the solid state memory module, wherein the second page is not associated with the second physical address; and after powering on the solid state memory module following a power failure: loading contents of the page and the second page from the solid state memory module into a memory of a control module; identifying the first TE in the memory; determining a third physical address based on the second physical address and at least a portion of the first TE; making a determination, using the third physical address, that the frag is located in the memory; and initiating, based on the determination, a writing of the frag to a fourth physical address in one selected from a group consisting of the solid state memory module and another solid state memory module. writing a frag, corresponding to a finite amount of user's data, to a first data page in vaulted memory, wherein the first data page comprises a first table of contents bit and a first physical address, wherein a designation of the first data page is an open data page, wherein the first physical address corresponds to a first location in a solid state memory module, wherein the TOC bit indicates that a page holds TOC information on data frags, depending on the value of the bit, and the open pages are a portion of memory that is used to store, either data frags or TOC entries prior to being written to the appropriate solid state memory module; writing a first table of contents entry for the frag to an open TOC page in the vaulted memory, wherein the open TOC page comprises a second TOC bit, a second physical address, and a second TE, wherein the second physical address corresponds to a second location in the solid state memory module; receiving an event notification of a power failure for a storage module in which the vaulted memory is located; in response to the event notification: writing the frag to a page in the solid state memory module in the storage module, wherein the page is not associated with the first physical address; and writing the first TE and the second TE to a second page in the solid state memory module, wherein the second page is not associated with the second physical address; and writing the frag to a page in the solid state memory module in the storage module, wherein the page is not associated with the first physical address; and writing the first TE and the second TE to a second page in the solid state memory module, wherein the second page is not associated with the second physical address; and after powering on the solid state memory module following a power failure: loading contents of the page and the second page from the solid state memory module into a memory of a control module; identifying the first TE in the memory; determining a third physical address based on the second physical address and at least a portion of the first TE; making a determination, using the third physical address, that the frag is located in the memory; and initiating, based on the determination, a writing of the frag to a fourth physical address in one selected from a group consisting of the solid state memory module and another solid state memory module. loading contents of the page and the second page from the solid state memory module into a memory of a control module; identifying the first TE in the memory; determining a third physical address based on the second physical address and at least a portion of the first TE; making a determination, using the third physical address, that the frag is located in the memory; and initiating, based on the determination, a writing of the frag to a fourth physical address in one selected from a group consisting of the solid state memory module and another solid state memory module.