A method for interconnecting a buried wiring line and a source/drain body, the method comprising: forming a fin structure on a substrate, the fin structure comprising at least one channel layer; forming a buried wiring line in a trench extending alongside the fin structure, wherein the buried wiring line is capped by a first insulating layer structure; forming a source/drain body on the at least one channel layer by epitaxy; forming a via hole in the first insulating layer structure to expose an upper surface of the buried wiring line; forming a metal via in the via hole: forming a second insulating layer structure over the first insulating layer structure, wherein a contact opening is defined in the second insulating layer structure to expose the source/drain body and an upper via portion of the metal via; forming a source/drain contact in the contact opening, on the upper via portion and the source/drain body, thereby interconnecting the buried wiring line and the source/drain body; the method characterized by forming a first temporary process layer over the first insulating layer structure and the source/drain body; forming a via opening in the first temporary process layer by etching wherein the via hole in the first insulating layer structure subsequently is formed by transferring the via opening into the first insulating layer structure by etching, and wherein the first temporary process layer is removed prior to forming the second insulating layer structure; and wherein forming the metal comprises depositing metal in the via hole and in the via opening, and wherein the method further comprises removing the first temporary process layer subsequent to forming the metal via; and wherein the metal via is formed such that the upper portion protrudes above a level of the source/drain body. forming a fin structure on a substrate, the fin structure comprising at least one channel layer; forming a buried wiring line in a trench extending alongside the fin structure, wherein the buried wiring line is capped by a first insulating layer structure; forming a source/drain body on the at least one channel layer by epitaxy; forming a via hole in the first insulating layer structure to expose an upper surface of the buried wiring line; forming a metal via in the via hole: forming a second insulating layer structure over the first insulating layer structure, wherein a contact opening is defined in the second insulating layer structure to expose the source/drain body and an upper via portion of the metal via; forming a source/drain contact in the contact opening, on the upper via portion and the source/drain body, thereby interconnecting the buried wiring line and the source/drain body; the method characterized by forming a first temporary process layer over the first insulating layer structure and the source/drain body; forming a via opening in the first temporary process layer by etching wherein the via hole in the first insulating layer structure subsequently is formed by transferring the via opening into the first insulating layer structure by etching, and wherein the first temporary process layer is removed prior to forming the second insulating layer structure; and wherein forming the metal comprises depositing metal in the via hole and in the via opening, and wherein the method further comprises removing the first temporary process layer subsequent to forming the metal via; and wherein the metal via is formed such that the upper portion protrudes above a level of the source/drain body. forming a second insulating layer structure over the first insulating layer structure, wherein a contact opening is defined in the second insulating layer structure to expose the source/drain body and an upper via portion of the metal via; forming a source/drain contact in the contact opening, on the upper via portion and the source/drain body, thereby interconnecting the buried wiring line and the source/drain body; the method characterized by forming a first temporary process layer over the first insulating layer structure and the source/drain body; forming a via opening in the first temporary process layer by etching wherein the via hole in the first insulating layer structure subsequently is formed by transferring the via opening into the first insulating layer structure by etching, and wherein the first temporary process layer is removed prior to forming the second insulating layer structure; and wherein forming the metal comprises depositing metal in the via hole and in the via opening, and wherein the method further comprises removing the first temporary process layer subsequent to forming the metal via; and wherein the metal via is formed such that the upper portion protrudes above a level of the source/drain body.