A semiconductor light emitting device, comprising: a semiconductor layer including a light emitting layer, the semiconductor layer having a first surface and a second surface opposite to the first surface; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer, the n-side electrode having a corner and a plurality of straight portions, the plurality of straight portions extending in different directions, the corner connecting the plurality of straight portions and not being in contact with the semiconductor layer, the straight portions of the n-side electrode being in contact with the semiconductor layer; a p-side interconnect unit provided on the second surface side to be connected to the p-side electrode; an n-side interconnect unit provided on the second surface side to be connected to the n-side electrode; and a first insulating film being provided between the semiconductor layer and the corner of the n-side electrode, wherein the n-side de electrode has a contact portion provided in one of the straight portions to protrude in a width direction of the straight portion to be connected to the n-side interconnect unit; characterized in that: the semiconductor light emitting device further comprises: a resin layer provided between the p-side interconnect unit and the n-side interconnect unit, the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer, and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed. a semiconductor layer including a light emitting layer, the semiconductor layer having a first surface and a second surface opposite to the first surface; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer, the n-side electrode having a corner and a plurality of straight portions, the plurality of straight portions extending in different directions, the corner connecting the plurality of straight portions and not being in contact with the semiconductor layer, the straight portions of the n-side electrode being in contact with the semiconductor layer; a p-side interconnect unit provided on the second surface side to be connected to the p-side electrode; an n-side interconnect unit provided on the second surface side to be connected to the n-side electrode; and a first insulating film being provided between the semiconductor layer and the corner of the n-side electrode, wherein the n-side de electrode has a contact portion provided in one of the straight portions to protrude in a width direction of the straight portion to be connected to the n-side interconnect unit; characterized in that: the semiconductor light emitting device further comprises: a resin layer provided between the p-side interconnect unit and the n-side interconnect unit, the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer, and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed. a resin layer provided between the p-side interconnect unit and the n-side interconnect unit, the contact portion does not contact the semiconductor layer by a second insulating film being provided between the contact portion and the semiconductor layer, and the contact portion of the n-side electrode overlaps the p-side electrode with a third insulating film interposed.