A Doherty amplifier module comprising: a substrate with a mounting surface, wherein a plurality of non-overlapping zones are defined at the mounting surface, including an input signal zone, a first-die mounting zone, and a second-die mounting zone; an RF signal splitter (120, 200, 320, 520) in the input signal zone, wherein the RF signal splitter (120, 200, 320, 520) is configured to receive and divide an input RF signal into a first input RF signal and a second input RF signal, and to convey the first and second input RF signals to first and second splitter output terminals (124, 126, 203, 204, 524, 525); a carrier amplifier die (132, 332, 532) in the first-die mounting zone, wherein the carrier amplifier die (132, 332, 532) includes one or more first power transistors configured to amplify, along a carrier signal path (130, 330, 530), the first input RF signal to produce an amplified first RF signal; and a peaking amplifier die (152, 352, 552) in the second-die mounting zone, wherein the peaking amplifier die (152, 352, 552) includes one or more second power transistors configured to amplify, along a peaking signal path (150, 350, 550), the second input RF signal to produce an amplified second RF signal, wherein the Doherty amplifier module is characterized in that the carrier amplifier die (132, 332, 532) and the peaking amplifier die (152, 352, 552) are coupled to the substrate such that the carrier and peaking signal paths (130, 150, 530, 550, 551) through the carrier amplifier die (132, 332, 532) and the peaking amplifier die (152, 352, 552) extend in non-parallel directions at least +/- 45 degrees from each other. a substrate with a mounting surface, wherein a plurality of non-overlapping zones are defined at the mounting surface, including an input signal zone, a first-die mounting zone, and a second-die mounting zone; an RF signal splitter (120, 200, 320, 520) in the input signal zone, wherein the RF signal splitter (120, 200, 320, 520) is configured to receive and divide an input RF signal into a first input RF signal and a second input RF signal, and to convey the first and second input RF signals to first and second splitter output terminals (124, 126, 203, 204, 524, 525); a carrier amplifier die (132, 332, 532) in the first-die mounting zone, wherein the carrier amplifier die (132, 332, 532) includes one or more first power transistors configured to amplify, along a carrier signal path (130, 330, 530), the first input RF signal to produce an amplified first RF signal; and a peaking amplifier die (152, 352, 552) in the second-die mounting zone, wherein the peaking amplifier die (152, 352, 552) includes one or more second power transistors configured to amplify, along a peaking signal path (150, 350, 550), the second input RF signal to produce an amplified second RF signal, wherein the Doherty amplifier module is characterized in that the carrier amplifier die (132, 332, 532) and the peaking amplifier die (152, 352, 552) are coupled to the substrate such that the carrier and peaking signal paths (130, 150, 530, 550, 551) through the carrier amplifier die (132, 332, 532) and the peaking amplifier die (152, 352, 552) extend in non-parallel directions at least +/- 45 degrees from each other.