A method for manufacturing an integrated electronic circuit which includes at least one component based on metal ion migration and reduction, which method comprises the following steps: /1/ selecting a metal and a first material which is different from the metal and capable of containing ions or atoms of the metal, and also selecting at least one second material so that each second material is electrically insulating and has a capacity of containing the metal ions or metal atoms which is less than that of the first material; /2/ on a substrate of the integrated circuit, forming at least one portion of the first material, called container, and at least one portion of the at least one second material, called boundary portion, so that the container and the boundary portion are next to each other; /3/ depositing a layer on the substrate provided with the container and the boundary portion, said layer containing ions or atoms of the metal and being called supply layer, so that a path from the supply layer to the container is available for some of said ions or atoms of the metal; /4/ activating a moving of some of the ions or atoms of the metal that are contained in the supply layer, said moving occurring from said supply layer into at least part of the container selectively with respect to each boundary portion; and /5/ removing the supply layer from the integrated circuit, while leaving the ions or atoms of the metal that have moved in step /4/ into the container, wherein the method further comprises depositing an electrode portion, called inert electrode, on the integrated circuit, so that the component based on metal ion migration and reduction comprises at least the container and the inert electrode, the component based on metal ion migration and reduction being arranged so that metal ions produce metal filaments from the inert electrode within an electrolyte portion (11; 12) when a negative voltage is applied to said inert electrode with respect to the container if said container acts as an active electrode capable of transferring electrons outwards in addition to supplying the metal ions or atoms for forming the metal filaments, or with respect to a reference electrode which is in contact with the electrolyte portion separately from the inert electrode if said container forms at least part of the electrolyte portion, during an operation of the component, and wherein the inert electrode when the container acts as an active electrode, or each of the inert electrode and the reference electrode when the container forms at least part of the electrolyte portion, is either not yet formed on the substrate of the integrated circuit before /5/ has been completed, or isolated from the supply layer by the container or by the at least one boundary portion during step /4/, characterized in that the at least one container is the only part of the component based on metal ion migration and reduction, which is in contact with the supply layer during step /4/, in addition to the boundary portion. /1/ selecting a metal and a first material which is different from the metal and capable of containing ions or atoms of the metal, and also selecting at least one second material so that each second material is electrically insulating and has a capacity of containing the metal ions or metal atoms which is less than that of the first material; /2/ on a substrate of the integrated circuit, forming at least one portion of the first material, called container, and at least one portion of the at least one second material, called boundary portion, so that the container and the boundary portion are next to each other; /3/ depositing a layer on the substrate provided with the container and the boundary portion, said layer containing ions or atoms of the metal and being called supply layer, so that a path from the supply layer to the container is available for some of said ions or atoms of the metal; /4/ activating a moving of some of the ions or atoms of the metal that are contained in the supply layer, said moving occurring from said supply layer into at least part of the container selectively with respect to each boundary portion; and /5/ removing the supply layer from the integrated circuit, while leaving the ions or atoms of the metal that have moved in step /4/ into the container,