A method for crystallization of silicon comprising: - arranging silicon in a crucible; - melting the silicon contained in the crucible; and - subsequently solidifying the molten silicon while stirring the molten silicon in the crucible by means of an electromagnetic stirring device, characterized by the steps of: - solidifying the molten silicon at a specified solidification rate; and - controlling the stirring by the electromagnetic stirring device in response to the step of solidifying such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value, wherein the speed of the molten silicon is any of the highest speed of the molten silicon, the average speed of the molten silicon, the highest speed of a portion of the molten silicon, and the average speed of a portion of the molten silicon, the portion being a portion located at, or close above, the solidification front of the crystallized silicon, wherein stirring of the molten silicon in the crucible by the electromagnetic stirring device is performed in two stages such that a first speed of the molten silicon is obtained in a first one of the stages and a second speed of the molten silicon is obtained in a second one of the stages, the first speed of the molten silicon being higher than the second speed of the molten silicon. - arranging silicon in a crucible; - melting the silicon contained in the crucible; and - subsequently solidifying the molten silicon while stirring the molten silicon in the crucible by means of an electromagnetic stirring device, characterized by the steps of: - solidifying the molten silicon at a specified solidification rate; and - controlling the stirring by the electromagnetic stirring device in response to the step of solidifying such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value, wherein the speed of the molten silicon is any of the highest speed of the molten silicon, the average speed of the molten silicon, the highest speed of a portion of the molten silicon, and the average speed of a portion of the molten silicon, the portion being a portion located at, or close above, the solidification front of the crystallized silicon, wherein stirring of the molten silicon in the crucible by the electromagnetic stirring device is performed in two stages such that a first speed of the molten silicon is obtained in a first one of the stages and a second speed of the molten silicon is obtained in a second one of the stages, the first speed of the molten silicon being higher than the second speed of the molten silicon. - solidifying the molten silicon at a specified solidification rate; and - controlling the stirring by the electromagnetic stirring device in response to the step of solidifying such that the ratio of a speed of the molten silicon and the specified solidification rate is above a first threshold value, wherein the speed of the molten silicon is any of the highest speed of the molten silicon, the average speed of the molten silicon, the highest speed of a portion of the molten silicon, and the average speed of a portion of the molten silicon, the portion being a portion located at, or close above, the solidification front of the crystallized silicon, wherein stirring of the molten silicon in the crucible by the electromagnetic stirring device is performed in two stages such that a first speed of the molten silicon is obtained in a first one of the stages and a second speed of the molten silicon is obtained in a second one of the stages, the first speed of the molten silicon being higher than the second speed of the molten silicon.