A light emitting device package, comprising: a light emitting device, LED, comprising: a light emission structure comprising a first nitride-based semiconductor layer with an uneven surface pattern on a light extraction surface thereof, an active laver and a second nitride-based semiconductor layer and having a mesa structure that exposes a part of the first nitride-based semiconductor layer: a first electrode pad disposed on the first nitride-based semiconductor layer being exposed; a second electrode pad disposed on the second nitride-based semiconductor layer; an insulating layer disposed on the light extraction surface of the first nitride-based semiconductor layer with the uneven surface pattern; a phosphor resin layer disposed on the insulating layer; a substrate comprising a plurality of via holes (H1, H2) bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the plurality of via holes (H1, H2) to extend to a part of the second surface; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad, disposed between the LED and the first surface of the substrate, and bonded to the LED and the first surface of the substrate; and a bonding metal pattern layer bonded to the wiring metal layer, exposed through the plurality of via holes (H1, H2) at the first surface of the substrate, and also bonded to the first electrode pad and the second electrode pad, wherein the phosphor resin layer is distinct from the bonding insulating pattern layer. a light emitting device, LED, comprising: a light emission structure comprising a first nitride-based semiconductor layer with an uneven surface pattern on a light extraction surface thereof, an active laver and a second nitride-based semiconductor layer and having a mesa structure that exposes a part of the first nitride-based semiconductor layer: a first electrode pad disposed on the first nitride-based semiconductor layer being exposed; a second electrode pad disposed on the second nitride-based semiconductor layer; an insulating layer disposed on the light extraction surface of the first nitride-based semiconductor layer with the uneven surface pattern; a phosphor resin layer disposed on the insulating layer; a substrate comprising a plurality of via holes (H1, H2) bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the plurality of via holes (H1, H2) to extend to a part of the second surface; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad, disposed between the LED and the first surface of the substrate, and bonded to the LED and the first surface of the substrate; and a bonding metal pattern layer bonded to the wiring metal layer, exposed through the plurality of via holes (H1, H2) at the first surface of the substrate, and also bonded to the first electrode pad and the second electrode pad, wherein the phosphor resin layer is distinct from the bonding insulating pattern layer. a light emission structure comprising a first nitride-based semiconductor layer with an uneven surface pattern on a light extraction surface thereof, an active laver and a second nitride-based semiconductor layer and having a mesa structure that exposes a part of the first nitride-based semiconductor layer: a first electrode pad disposed on the first nitride-based semiconductor layer being exposed; a second electrode pad disposed on the second nitride-based semiconductor layer; an insulating layer disposed on the light extraction surface of the first nitride-based semiconductor layer with the uneven surface pattern; a phosphor resin layer disposed on the insulating layer; a substrate comprising a plurality of via holes (H1, H2) bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the plurality of via holes (H1, H2) to extend to a part of the second surface; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad, disposed between the LED and the first surface of the substrate, and bonded to the LED and the first surface of the substrate; and a bonding metal pattern layer bonded to the wiring metal layer, exposed through the plurality of via holes (H1, H2) at the first surface of the substrate, and also bonded to the first electrode pad and the second electrode pad, a first electrode pad disposed on the first nitride-based semiconductor layer being exposed; a second electrode pad disposed on the second nitride-based semiconductor layer; an insulating layer disposed on the light extraction surface of the first nitride-based semiconductor layer with the uneven surface pattern; a phosphor resin layer disposed on the insulating layer; a substrate comprising a plurality of via holes (H1, H2) bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the plurality of via holes (H1, H2) to extend to a part of the second surface; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad, disposed between the LED and the first surface of the substrate, and bonded to the LED and the first surface of the substrate; and a bonding metal pattern layer bonded to the wiring metal layer, exposed through the plurality of via holes (H1, H2) at the first surface of the substrate, and also bonded to the first electrode pad and the second electrode pad, wherein the phosphor resin layer is distinct from the bonding insulating pattern layer.