Method for resetting an array of Resistive Random-Access Memory cells by applying a sequence of N reset operations, N being an integer number greater than 2, to put at least one of the cells of the array into a high resistance state, each reset operation being performed by applying a reset technique chosen among different available reset techniques, a correction yield being measured, prior to the first reset operation, for each of these reset techniques and for each reset operation of a preliminary sequence of N reset operations, the correction yield being a cumulative correction yield or a relative correction yield, the cumulative correction yield being a fraction of the cells in the array that are corrected by applying the reset technique considered at the j-th reset operation of said preliminary sequence, the relative correction yield being a fraction of the cells in the array that, being in the wrong resistive state at the (j-1)-th rest operation of said preliminary sequence, are corrected by applying said reset technique at the j-th reset operation, said method comprising the following steps: - at the first reset operation, defining a first reset technique, chosen among said reset techniques, and performing the first reset operation by applying said first reset technique; - at a j-th reset operation (Oj) of the N-1 subsequent reset operations, j being an integer number comprised between 2 and N, if the correction yield of the reset technique used at the (j-1)-th reset operation fulfils a predefined condition (Cn), applying said reset technique used at the (j-1)-th reset operation to perform the j-th reset operation (Rj), if the correction yield of the reset technique used at the (j-1)-th reset operation does not fulfil the predefined condition, defining a new reset technique (Dj), chosen among said reset techniques, and applying the new reset technique to perform the j-th reset operation (Rj). applying a sequence of N reset operations, N being an integer number greater than 2, to put at least one of the cells of the array into a high resistance state, each reset operation being performed by applying a reset technique chosen among different available reset techniques, a correction yield being measured, prior to the first reset operation, for each of these reset techniques and for each reset operation of a preliminary sequence of N reset operations, the correction yield being a cumulative correction yield or a relative correction yield, the cumulative correction yield being a fraction of the cells in the array that are corrected by applying the reset technique considered at the j-th reset operation of said preliminary sequence, the relative correction yield being a fraction of the cells in the array that, being in the wrong resistive state at the (j-1)-th rest operation of said preliminary sequence, are corrected by applying said reset technique at the j-th reset operation, said method comprising the following steps: - at the first reset operation, defining a first reset technique, chosen among said reset techniques, and performing the first reset operation by applying said first reset technique; - at a j-th reset operation (Oj) of the N-1 subsequent reset operations, j being an integer number comprised between 2 and N, if the correction yield of the reset technique used at the (j-1)-th reset operation fulfils a predefined condition (Cn), applying said reset technique used at the (j-1)-th reset operation to perform the j-th reset operation (Rj), if the correction yield of the reset technique used at the (j-1)-th reset operation does not fulfil the predefined condition, defining a new reset technique (Dj), chosen among said reset techniques, and applying the new reset technique to perform the j-th reset operation (Rj). - at the first reset operation, defining a first reset technique, chosen among said reset techniques, and performing the first reset operation by applying said first reset technique; - at a j-th reset operation (Oj) of the N-1 subsequent reset operations, j being an integer number comprised between 2 and N, if the correction yield of the reset technique used at the (j-1)-th reset operation fulfils a predefined condition (Cn), applying said reset technique used at the (j-1)-th reset operation to perform the j-th reset operation (Rj), if the correction yield of the reset technique used at the (j-1)-th reset operation does not fulfil the predefined condition, defining a new reset technique (Dj), chosen among said reset techniques, and applying the new reset technique to perform the j-th reset operation (Rj).