A method of manufacturing a light emission device based on light emitting diodes, comprising: ▪ the formation of a support (10, 12) forming a heat exchanger; ▪ the formation of a first electrode on the support (10, 12); ▪ the growth of semiconducting light-emitting nanowires on the first electrode; ▪ the encapsulation of the nanowires in a planarising material; ▪ the formation, on the planarising material, of a second electrode able to at least partially transmit the light emitted by the nanowires; ▪ the formation of areas for taking up electrical contact on the second electrode; characterised: ▪ in that the support (10, 12) has an electrically insulating face on which the first electrode is formed; ▪ and in that it comprises: ∘ the formation of the light emitting diodes by: ▪ releasing a band of the first electrode around each contact take-up area, comprising: - the formation of a mask defining said bands on the surface of the second electrode; - a first chemical etching of the planarising material, the chemical etching being stopped so as to preserve planarising material on the first electrode; - a second chemical etching of the portion of nanowires released from the planarising material during the first chemical etching; and - a third chemical etching of planarising material remaining at the end of the first chemical etching, ▪ and the formation of a trench along each of the said bands as far as the electrically insulating face of the support (10, 12); ∘ and placing the light emitting diodes in series by electrically connecting the electrical contact take-up areas and the bands of the first electrode. ▪ the formation of a support (10, 12) forming a heat exchanger; ▪ the formation of a first electrode on the support (10, 12); ▪ the growth of semiconducting light-emitting nanowires on the first electrode; ▪ the encapsulation of the nanowires in a planarising material; ▪ the formation, on the planarising material, of a second electrode able to at least partially transmit the light emitted by the nanowires; ▪ the formation of areas for taking up electrical contact on the second electrode; ▪ in that the support (10, 12) has an electrically insulating face on which the first electrode is formed; ▪ and in that it comprises: ∘ the formation of the light emitting diodes by: ▪ releasing a band of the first electrode around each contact take-up area, comprising: - the formation of a mask defining said bands on the surface of the second electrode; - a first chemical etching of the planarising material, the chemical etching being stopped so as to preserve planarising material on the first electrode; - a second chemical etching of the portion of nanowires released from the planarising material during the first chemical etching; and - a third chemical etching of planarising material remaining at the end of the first chemical etching, ▪ and the formation of a trench along each of the said bands as far as the electrically insulating face of the support (10, 12); ∘ and placing the light emitting diodes in series by electrically connecting the electrical contact take-up areas and the bands of the first electrode. ∘ the formation of the light emitting diodes by: ▪ releasing a band of the first electrode around each contact take-up area, comprising: - the formation of a mask defining said bands on the surface of the second electrode; - a first chemical etching of the planarising material, the chemical etching being stopped so as to preserve planarising material on the first electrode; - a second chemical etching of the portion of nanowires released from the planarising material during the first chemical etching; and - a third chemical etching of planarising material remaining at the end of the first chemical etching, ▪ and the formation of a trench along each of the said bands as far as the electrically insulating face of the support (10, 12); ▪ releasing a band of the first electrode around each contact take-up area, comprising: - the formation of a mask defining said bands on the surface of the second electrode; - a first chemical etching of the planarising material, the chemical etching being stopped so as to preserve planarising material on the first electrode; - a second chemical etching of the portion of nanowires released from the planarising material during the first chemical etching; and - a third chemical etching of planarising material remaining at the end of the first chemical etching, - the formation of a mask defining said bands on the surface of the second electrode; - a first chemical etching of the planarising material, the chemical etching being stopped so as to preserve planarising material on the first electrode; - a second chemical etching of the portion of nanowires released from the planarising material during the first chemical etching; and - a third chemical etching of planarising material remaining at the end of the first chemical etching, ▪ and the formation of a trench along each of the said bands as far as the electrically insulating face of the support (10, 12); ∘ and placing the light emitting diodes in series by electrically connecting the electrical contact take-up areas and the bands of the first electrode.