Process for transferring a layer comprising the following steps: a) providing a donor substrate and a support substrate made of materials having a first and second thermal expansion coefficient, respectively; b) forming a embrittlement region in the donor substrate so as to delimit a first part and a second part in the donor substrate on either side of the embrittlement region, the first part being intended to form the layer to be transferred to the support substrate; d) assembling the donor substrate to the support substrate, the transfer process being characterized in that it comprises the following step: c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate, the bonding layer having a preset thickness; and e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the electromagnetic irradiations belonging to a spectral domain chosen so that the support substrate, the bonding layer and the donor substrate are transparent and absorbent, respectively, in said spectral domain, the exposure time being chosen depending on the thickness of the bonding layer so that the temperature of the support substrate remains below a threshold during the exposure time, above which threshold defects are liable to appear in the structure comprising the support substrate, the bonding layer and the donor substrate, the exposure time being also chosen depending on the power density in order to activate kinetics that weaken the embrittlement region, wherein the exposure time is further chosen depending on the thickness of the bonding layer so that the thermal diffusion length in the bonding layer is smaller than or equal to the thickness of the bonding layer. a) providing a donor substrate and a support substrate made of materials having a first and second thermal expansion coefficient, respectively; b) forming a embrittlement region in the donor substrate so as to delimit a first part and a second part in the donor substrate on either side of the embrittlement region, the first part being intended to form the layer to be transferred to the support substrate; d) assembling the donor substrate to the support substrate, the transfer process being characterized in that it comprises the following step: c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate, the bonding layer having a preset thickness; and e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the electromagnetic irradiations belonging to a spectral domain chosen so that the support substrate, the bonding layer and the donor substrate are transparent and absorbent, respectively, in said spectral domain, the exposure time being chosen depending on the thickness of the bonding layer so that the temperature of the support substrate remains below a threshold during the exposure time, above which threshold defects are liable to appear in the structure comprising the support substrate, the bonding layer and the donor substrate, the exposure time being also chosen depending on the power density in order to activate kinetics that weaken the embrittlement region, wherein the exposure time is further chosen depending on the thickness of the bonding layer so that the thermal diffusion length in the bonding layer is smaller than or equal to the thickness of the bonding layer. c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate, the bonding layer having a preset thickness; and e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the electromagnetic irradiations belonging to a spectral domain chosen so that the support substrate, the bonding layer and the donor substrate are transparent and absorbent, respectively, in said spectral domain, the exposure time being chosen depending on the thickness of the bonding layer so that the temperature of the support substrate remains below a threshold during the exposure time, above which threshold defects are liable to appear in the structure comprising the support substrate, the bonding layer and the donor substrate, the exposure time being also chosen depending on the power density in order to activate kinetics that weaken the embrittlement region, wherein the exposure time is further chosen depending on the thickness of the bonding layer so that the thermal diffusion length in the bonding layer is smaller than or equal to the thickness of the bonding layer.