A method of forming at least one thin-film CIGS device (100, 200), comprising: forming at least one line segment via hole (163, 165, 165', 167) in a region of said thin-film CIGS device, said device comprising at least: - one front-contact layer (150, 152, 154, 156, 158); - one CIGS semiconductive optoelectronically active layer; - one back-contact layer (120, 124, 126, 128, 129); - one substrate; and wherein at least one line segment via hole: - is formed by drilling by at least one laser; - passes through at least one portion of the at least one front-contact layer and the at least one semiconductive optoelectronically active layer; and wherein drilling by at least one laser causes: - forming at least one CIGS-type wall (134, 134', 132, 136, 138) of electrically conductive permanently metalized, copper-rich CIGS-type alloy at the level of the active layer lining the inner surface of said at least one line segment via hole, said CIGS-type alloy resulting from a permanent change in the chemical composition of the CIGS semiconductive optoelectronically active layer where the hole is drilled, so that the metalized CIGS-type wall provides an electrically conductive path between at least one portion of the at least one front-contact layer and at least one portion of the at least one back-contact layer; - forming of a front-contact bump-shaped raised portion at the surface of the front-contact layer along the edge of the inner surface of said line segment via hole; - forming a raised portion (125, 127, 127') of the back-contact layer raised towards the front-contact layer, characterized in that drilling of at least one via hole is with at least one continuous wave laser and wherein forming of the at least one via hole by the continuous wave laser causes removal of a portion of the back-contact layer within the via hole, thereby exposing a portion of substrate, and wherein raising of a portion of the back-contact layer causes forming of at least one gutter-shaped curl-up (127, 127') of at least a portion of the back-contact layer at the periphery of the exposed portion of substrate. forming at least one line segment via hole (163, 165, 165', 167) in a region of said thin-film CIGS device, said device comprising at least: - one front-contact layer (150, 152, 154, 156, 158); - one CIGS semiconductive optoelectronically active layer; - one back-contact layer (120, 124, 126, 128, 129); - one substrate; - one front-contact layer (150, 152, 154, 156, 158); - one CIGS semiconductive optoelectronically active layer; - one back-contact layer (120, 124, 126, 128, 129); - one substrate; and wherein at least one line segment via hole: - is formed by drilling by at least one laser; - passes through at least one portion of the at least one front-contact layer and the at least one semiconductive optoelectronically active layer; - is formed by drilling by at least one laser; - passes through at least one portion of the at least one front-contact layer and the at least one semiconductive optoelectronically active layer; and wherein drilling by at least one laser causes: - forming at least one CIGS-type wall (134, 134', 132, 136, 138) of electrically conductive permanently metalized, copper-rich CIGS-type alloy at the level of the active layer lining the inner surface of said at least one line segment via hole, said CIGS-type alloy resulting from a permanent change in the chemical composition of the CIGS semiconductive optoelectronically active layer where the hole is drilled, so that the metalized CIGS-type wall provides an electrically conductive path between at least one portion of the at least one front-contact layer and at least one portion of the at least one back-contact layer; - forming of a front-contact bump-shaped raised portion at the surface of the front-contact layer along the edge of the inner surface of said line segment via hole; - forming a raised portion (125, 127, 127') of the back-contact layer raised towards the front-contact layer, - forming at least one CIGS-type wall (134, 134', 132, 136, 138) of electrically conductive permanently metalized, copper-rich CIGS-type alloy at the level of the active layer lining the inner surface of said at least one line segment via hole, said CIGS-type alloy resulting from a permanent change in the chemical composition of the CIGS semiconductive optoelectronically active layer where the hole is drilled, so that the metalized CIGS-type wall provides an electrically conductive path between at least one portion of the at least one front-contact layer and at least one portion of the at least one back-contact layer; - forming of a front-contact bump-shaped raised portion at the surface of the front-contact layer along the edge of the inner surface of said line segment via hole; - forming a raised portion (125, 127, 127') of the back-contact layer raised towards the front-contact layer,