A semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode provided on a first surface of the first conductive semiconductor layer; a second electrode provided on a first surface of the second conductive semiconductor layer, the active layer being provided between the first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer that is opposite to the first surface of the second conductive semiconductor layer; a first insulation layer provided on the first surface of the first conductive semiconductor layer, the first surface of the second conductive semiconductor layer, and a side surface of the active layer, the first insulation layer and the first electrode being separated on the first surface of the first conductive semiconductor layer; and a first cover electrode provided on the first electrode and the first surface of the first conductive semiconductor layer, a second cover electrode provided on the second electrode; and a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, and wherein the first cover electrode overlaps the first insulation layer in a first direction perpendicular to the first surface of the first conductive semiconductor layer, wherein the second insulation layer includes a first opening exposing the first cover electrode and a second opening exposing the second cover electrode, wherein the first electrode includes a plurality of first grooves (151a-1, 151a-2 151a-3, 151a-4) provided on an upper surface of the first electrode and a protrusion portion surrounding the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4), and wherein the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4) are spaced from each other a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode provided on a first surface of the first conductive semiconductor layer; a second electrode provided on a first surface of the second conductive semiconductor layer, the active layer being provided between the first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer that is opposite to the first surface of the second conductive semiconductor layer; a first insulation layer provided on the first surface of the first conductive semiconductor layer, the first surface of the second conductive semiconductor layer, and a side surface of the active layer, the first insulation layer and the first electrode being separated on the first surface of the first conductive semiconductor layer; and a first cover electrode provided on the first electrode and the first surface of the first conductive semiconductor layer, a second cover electrode provided on the second electrode; and a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, and wherein the first cover electrode overlaps the first insulation layer in a first direction perpendicular to the first surface of the first conductive semiconductor layer, wherein the second insulation layer includes a first opening exposing the first cover electrode and a second opening exposing the second cover electrode, wherein the first electrode includes a plurality of first grooves (151a-1, 151a-2 151a-3, 151a-4) provided on an upper surface of the first electrode and a protrusion portion surrounding the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4), and wherein the plurality of first grooves (151a-1, 151a-2, 151a-3, 151a-4) are spaced from each other