A Schottky barrier diode comprising: a semiconductor substrate made of gallium oxide, the semiconductor substrate having a first surface extending in a first direction and a second direction perpendicular to the first direction, a second surface opposite to the first surface, a first side surface extending in the second direction and a third direction perpendicular to the first and second directions (X, Y), a second side surface extending in the first and third directions (X, Z), a third side surface opposite to the first side surface, a fourth side surface opposite to the second side surface; an epitaxial layer made of gallium oxide, the epitaxial layer being provided on the first surface of the semiconductor substrate; an anode electrode provided at a position overlapping the recessed part as viewed in the third direction, which is a lamination direction, and brought into Schottky contact with the epitaxial layer; and a cathode electrode provided in the recessed part of the semiconductor substrate and brought into ohmic contact with the semiconductor substrate;the Schottky barrier diode being characterised in that: it comprises a recessed part formed on the second surface of the semiconductor substrate, the recessed part being configured for a conductive member to be embedded therein at mounting on a circuit board, the conductive member being configured to connect the cathode electrode and an electrode pattern provided on the circuit board, wherein the semiconductor substrate further has a first communication hole extending in the first direction and connecting the recessed part to the first side surface, a second communication hole extending in the second direction and connecting the recessed part to the second side surface, a third communication hole extending in the first direction and connecting the recessed part to the third side surface, and a fourth communication hole extending in the second direction and connecting the recessed part to the fourth side surface, wherein each of the first and third communication holes is narrower in width in the second direction than the recessed part, and wherein each of the second and fourth communication holes is narrower in width in the first direction than the recessed part. a semiconductor substrate made of gallium oxide, the semiconductor substrate having a first surface extending in a first direction and a second direction perpendicular to the first direction, a second surface opposite to the first surface, a first side surface extending in the second direction and a third direction perpendicular to the first and second directions (X, Y), a second side surface extending in the first and third directions (X, Z), a third side surface opposite to the first side surface, a fourth side surface opposite to the second side surface; an epitaxial layer made of gallium oxide, the epitaxial layer being provided on the first surface of the semiconductor substrate; an anode electrode provided at a position overlapping the recessed part as viewed in the third direction, which is a lamination direction, and brought into Schottky contact with the epitaxial layer; and a cathode electrode provided in the recessed part of the semiconductor substrate and brought into ohmic contact with the semiconductor substrate;the Schottky barrier diode being characterised in that: it comprises a recessed part formed on the second surface of the semiconductor substrate, the recessed part being configured for a conductive member to be embedded therein at mounting on a circuit board, the conductive member being configured to connect the cathode electrode and an electrode pattern provided on the circuit board, wherein the semiconductor substrate further has a first communication hole extending in the first direction and connecting the recessed part to the first side surface, a second communication hole extending in the second direction and connecting the recessed part to the second side surface, a third communication hole extending in the first direction and connecting the recessed part to the third side surface, and a fourth communication hole extending in the second direction and connecting the recessed part to the fourth side surface, wherein each of the first and third communication holes is narrower in width in the second direction than the recessed part, and wherein each of the second and fourth communication holes is narrower in width in the first direction than the recessed part. it comprises a recessed part formed on the second surface of the semiconductor substrate, the recessed part being configured for a conductive member to be embedded therein at mounting on a circuit board, the conductive member being configured to connect the cathode electrode and an electrode pattern provided on the circuit board, wherein the semiconductor substrate further has a first communication hole extending in the first direction and connecting the recessed part to the first side surface, a second communication hole extending in the second direction and connecting the recessed part to the second side surface, a third communication hole extending in the first direction and connecting the recessed part to the third side surface, and a fourth communication hole extending in the second direction and connecting the recessed part to the fourth side surface, wherein each of the first and third communication holes is narrower in width in the second direction than the recessed part, and wherein each of the second and fourth communication holes is narrower in width in the first direction than the recessed part.