A method of forming a semiconductor construction, comprising: providing a semiconductor substrate, the substrate comprising a plurality of trenched isolation regions (12, 14, 16) extending within a monocrystalline semiconductor material, each of the isolation regions comprising a trench filled with dielectric material (23, 24), the isolation regions being spaced from one another by first regions (20, 22) comprising the monocrystalline semiconductor material; and patterning the monocrystalline semiconductor material into a plurality of pillars (70, 72, 74, 76, 78, 80, 82, 84, 86, 88, 90) within the first regions and spaced apart from the trenched isolation regions (12, 14, 16); wherein the patterning comprises: forming a patterned hard mask over the monocrystalline semiconductor material; and transferring a pattern from the patterned hard mask into the monocrystalline semiconductor material; wherein the trenched isolation regions (12, 14, 16) have an uppermost surface at a first elevational level, wherein the monocrystalline semiconductor material has an uppermost surface at a second elevational level, and wherein the first elevational level is below the second elevational level at initiation of the patterning of the semiconductor material; and wherein the monocrystalline semiconductor material is a first semiconductor material, the method further comprising forming a second semiconductor material over the first semiconductor material, and wherein the patterning patterns the second semiconductor material, the method further comprising patterning the dielectric material (23, 24) such that the elevational height of the dielectric material is below the elevational height of the first semiconductor material before forming the second semiconductor material; and wherein the patterning forms individual of the pillars to comprise a segment of the second semiconductor material over a segment of the first semiconductor material. providing a semiconductor substrate, the substrate comprising a plurality of trenched isolation regions (12, 14, 16) extending within a monocrystalline semiconductor material, each of the isolation regions comprising a trench filled with dielectric material (23, 24), the isolation regions being spaced from one another by first regions (20, 22) comprising the monocrystalline semiconductor material; and patterning the monocrystalline semiconductor material into a plurality of pillars (70, 72, 74, 76, 78, 80, 82, 84, 86, 88, 90) within the first regions and spaced apart from the trenched isolation regions (12, 14, 16); wherein the patterning comprises: forming a patterned hard mask over the monocrystalline semiconductor material; and transferring a pattern from the patterned hard mask into the monocrystalline semiconductor material; forming a patterned hard mask over the monocrystalline semiconductor material; and transferring a pattern from the patterned hard mask into the monocrystalline semiconductor material; wherein the trenched isolation regions (12, 14, 16) have an uppermost surface at a first elevational level, wherein the monocrystalline semiconductor material has an uppermost surface at a second elevational level, and wherein the first elevational level is below the second elevational level at initiation of the patterning of the semiconductor material; and wherein the monocrystalline semiconductor material is a first semiconductor material, the method further comprising forming a second semiconductor material over the first semiconductor material, and wherein the patterning patterns the second semiconductor material, the method further comprising patterning the dielectric material (23, 24) such that the elevational height of the dielectric material is below the elevational height of the first semiconductor material before forming the second semiconductor material; and wherein the patterning forms individual of the pillars to comprise a segment of the second semiconductor material over a segment of the first semiconductor material.