A method for dicing a semiconductor substrate on a composite die attach material, the method comprising: - providing a work piece having a support film, a frame and the semiconductor substrate, the semiconductor substrate having a top surface and a bottom surface, the top surface of the semiconductor substrate having at least one die region and at least one street region; - providing the composite die attach material interposed between the bottom surface of the semiconductor substrate and the support film, the composite die attach material consisting of a polymer matrix with embedded filler SiO 2 particles; - etching semiconductor substrate material from the at least one street region to expose a portion of the composite die attach material using a deep reactive ion etch process; - executing a composite film process which comprises, in that order, a first etching process and a second etching process- the first etching process comprises the etching of the SiO 2 filler particles from the exposed portion of the composite die attach material using a hydrogen fluoride vapor process; and - the second etching process comprises the - etching of the polymer matrix of the exposed portion of the composite die attach material using an oxygen containing plasma etch process; and wherein the method further comprises: applying a barrier film to the at least one die region prior to the execution of the composite film process, the barrier film being configured to protect the device from being degraded by at least one of the first etching process and the second etching process. - providing a work piece having a support film, a frame and the semiconductor substrate, the semiconductor substrate having a top surface and a bottom surface, the top surface of the semiconductor substrate having at least one die region and at least one street region; - providing the composite die attach material interposed between the bottom surface of the semiconductor substrate and the support film, the composite die attach material consisting of a polymer matrix with embedded filler SiO 2 particles; - etching semiconductor substrate material from the at least one street region to expose a portion of the composite die attach material using a deep reactive ion etch process; - executing a composite film process which comprises, in that order, a first etching process and a second etching process- the first etching process comprises the etching of the SiO 2 filler particles from the exposed portion of the composite die attach material using a hydrogen fluoride vapor process; and - the second etching process comprises the - etching of the polymer matrix of the exposed portion of the composite die attach material using an oxygen containing plasma etch process; and wherein the method further comprises: applying a barrier film to the at least one die region prior to the execution of the composite film process, the barrier film being configured to protect the device from being degraded by at least one of the first etching process and the second etching process. - executing a composite film process which comprises, in that order, a first etching process and a second etching process- the first etching process comprises the etching of the SiO 2 filler particles from the exposed portion of the composite die attach material using a hydrogen fluoride vapor process; and - the second etching process comprises the - etching of the polymer matrix of the exposed portion of the composite die attach material using an oxygen containing plasma etch process; and wherein the method further comprises: applying a barrier film to the at least one die region prior to the execution of the composite film process, the barrier film being configured to protect the device from being degraded by at least one of the first etching process and the second etching process.