Method for writing to a random access memory (MRAM) cell using a thermally assisted write operation, the MRAM cell comprising: a magnetic tunnel junction comprising a storage layer having a storage magnetization that can be adjusted when the magnetic tunnel junction is heated to a high temperature threshold and fixed when the magnetic tunnel junction is cooled to a low temperature threshold; a reference layer having a fixed reference magnetization; and a tunnel barrier layer included between the reference and storage layers (21, 23); and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction via the current line for heating the magnetic tunnel junction; once magnetic tunnel junction has reached the high temperature threshold, passing a field current which generates a write magnetic field which switches the storage magnetization in a written direction substantially parallel or antiparallel relative to the reference magnetization, in accordance with the polarity of the field current; characterized in that the magnitude of the heating current is such that it acts as a spin polarized current and exerts an adjusting spin transfer on the storage magnetization; and in that the polarity of the heating current is such as to exert an adjusting spin transfer on the storage magnetization substantially towards said written direction. a magnetic tunnel junction comprising a storage layer having a storage magnetization that can be adjusted when the magnetic tunnel junction is heated to a high temperature threshold and fixed when the magnetic tunnel junction is cooled to a low temperature threshold; a reference layer having a fixed reference magnetization; and a tunnel barrier layer included between the reference and storage layers (21, 23); and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction via the current line for heating the magnetic tunnel junction; once magnetic tunnel junction has reached the high temperature threshold, passing a field current which generates a write magnetic field which switches the storage magnetization in a written direction substantially parallel or antiparallel relative to the reference magnetization, in accordance with the polarity of the field current; characterized in that the magnitude of the heating current is such that it acts as a spin polarized current and exerts an adjusting spin transfer on the storage magnetization; and in that the polarity of the heating current is such as to exert an adjusting spin transfer on the storage magnetization substantially towards said written direction. passing a heating current in the magnetic tunnel junction via the current line for heating the magnetic tunnel junction; once magnetic tunnel junction has reached the high temperature threshold, passing a field current which generates a write magnetic field which switches the storage magnetization in a written direction substantially parallel or antiparallel relative to the reference magnetization, in accordance with the polarity of the field current; characterized in that the magnitude of the heating current is such that it acts as a spin polarized current and exerts an adjusting spin transfer on the storage magnetization; and in that the polarity of the heating current is such as to exert an adjusting spin transfer on the storage magnetization substantially towards said written direction.