A method for manufacturing a photonic chip including at least one optoelectronic component disposed over a receiving substrate and optically coupled to a so-called integrated first waveguide, the method including the following steps: ∘ defining a central area Zc, over an upper face of the receiving substrate, having predefined dimensions Lc, Ic in the plane of the receiving substrate, said area being intended to be entirely covered by a label following a step of transferring the latter onto the receiving substrate while allowing for a predefined uncertainty d ip in the positioning of the label around the central area Zc; ∘ making the label, having initial dimensions Lv (i), lv (i) that are predetermined from the dimensions Lc, lc and of the positioning uncertainty d ip; ∘ making the receiving substrate, the upper face including the central area Zc, and a peripheral area Zp surrounding the central area Zc and intended to be partially covered by the label following the transfer step, together forming an actual transfer area Zr e in which the label is intended to be entirely located, the receiving substrate including: • the first waveguide, extending only in the central area Zc; and • a second waveguide, superimposed with and optically coupled to the first waveguide, extending at least in the peripheral area Zp, and having a spacing e gap, with respect to the upper face, larger than a predetermined threshold value P th; ∘ transferring the label into the actual transfer area Zr e of the receiving substrate, the central area Zc is then entirely covered by the label, and the peripheral area Zp then having a free surface not covered by the label; ∘ depositing an etch mask over a portion of the label, on the one hand, and around the actual transfer area Zr e, on the other hand; ∘ making the optoelectronic component from the label, by dry etching of a free portion of the label not coated by the etch mask, the free surface of the peripheral area Zp then being etched over a depth p sgv (a) smaller than or equal to the threshold value P th. ∘ defining a central area Zc, over an upper face of the receiving substrate, having predefined dimensions Lc, Ic in the plane of the receiving substrate, said area being intended to be entirely covered by a label following a step of transferring the latter onto the receiving substrate while allowing for a predefined uncertainty d ip in the positioning of the label around the central area Zc; ∘ making the label, having initial dimensions Lv (i), lv (i) that are predetermined from the dimensions Lc, lc and of the positioning uncertainty d ip; ∘ making the receiving substrate, the upper face including the central area Zc, and a peripheral area Zp surrounding the central area Zc and intended to be partially covered by the label following the transfer step, together forming an actual transfer area Zr e in which the label is intended to be entirely located, the receiving substrate including: • the first waveguide, extending only in the central area Zc; and • a second waveguide, superimposed with and optically coupled to the first waveguide, extending at least in the peripheral area Zp, and having a spacing e gap, with respect to the upper face, larger than a predetermined threshold value P th; • the first waveguide, extending only in the central area Zc; and • a second waveguide, superimposed with and optically coupled to the first waveguide, extending at least in the peripheral area Zp, and having a spacing e gap, with respect to the upper face, larger than a predetermined threshold value P th; ∘ transferring the label into the actual transfer area Zr e of the receiving substrate, the central area Zc is then entirely covered by the label, and the peripheral area Zp then having a free surface not covered by the label; ∘ depositing an etch mask over a portion of the label, on the one hand, and around the actual transfer area Zr e, on the other hand; ∘ making the optoelectronic component from the label, by dry etching of a free portion of the label not coated by the etch mask, the free surface of the peripheral area Zp then being etched over a depth p sgv (a) smaller than or equal to the threshold value P th.