An atomic layer deposition method for depositing a film into surface features of a substrate, the method comprising: a) placing the substrate having surface features into a reactor, the surface features having exposed hydroxyl groups; b) heating the reactor to one or more temperatures ranging from ambient temperature to about 700°C and optionally maintaining the reactor at a pressure of 100 torr or less; c) introducing into the reactor at least one organic passivation agent, selected from the group consisting of acetals, ketals, orthoesters and orthocarbonates, to react with a portion of the exposed hydroxyl groups of the surface features; d) purging unreacted organic passivation agent from the reactor using inert gas; e) introducing a precursor gas having at least one organoamino group to react with any unreacted hydroxyl groups of the surface features; f) purging unreacted precursor from the reactor using inert gas; g) introducing an oxygen source or a nitrogen source into the reactor; and h) purging unreacted oxygen source or nitrogen source and any byproducts with inert gas, wherein steps c through h are repeated until the surface features are filled from the bottom-up, wherein the organic passivation agent is selected from the group consisting of the following formulae: I. acetals or ketals having a formula of R 1 R 2 C(OR 3) 2 II. orthoesters having a formula of R 1 C(OR 3) 3 and III. orthocarbonates having a formula of C(OR 3) 4 wherein R 1 is selected from the group consisting of hydrogen, C 1 to C 10 linear or branched alkyl, C 3 to C 10 linear or branched cyclic alkyl, C 2 to C 10 alkenyl, C 2 to C 10 alkynyl, and C 3 to C 10 aromatic hydrocarbon R 2 and R 3 are independently selected from the group consisting of C 1 to C 10 linear or branched alkyl,, C 3 to C 10 linear or branched cyclic alkyl, C 2 to C 10 alkenyl, C 2 to C 10 alkynyl, and C 3 to C 10 aromatic hydrocarbon and wherein the precursor is selected from the group consisting of organoaminosilanes, organoaminodisilanes, organoaminotrisilylamines, organoaminosiloxanes, organoaminocyclosiloxanes, and organoaminotitanium, organoaminohafnium, organoaminozirconium, organoaminotantalum, organoaminotungsten, organoaminomolybdenum, organoaminoaluminum, alkylaluminum, and metal alkoxides. a) placing the substrate having surface features into a reactor, the surface features having exposed hydroxyl groups; b) heating the reactor to one or more temperatures ranging from ambient temperature to about 700°C and optionally maintaining the reactor at a pressure of 100 torr or less; c) introducing into the reactor at least one organic passivation agent, selected from the group consisting of acetals, ketals, orthoesters and orthocarbonates, to react with a portion of the exposed hydroxyl groups of the surface features; d) purging unreacted organic passivation agent from the reactor using inert gas; e) introducing a precursor gas having at least one organoamino group to react with any unreacted hydroxyl groups of the surface features; f) purging unreacted precursor from the reactor using inert gas; g) introducing an oxygen source or a nitrogen source into the reactor; and h) purging unreacted oxygen source or nitrogen source and any byproducts with inert gas, wherein steps c through h are repeated until the surface features are filled from the bottom-up, wherein the organic passivation agent is selected from the group consisting of the following formulae: I. acetals or ketals having a formula of R 1 R 2 C(OR 3) 2 II. orthoesters having a formula of R 1 C(OR 3) 3 and III. orthocarbonates having a formula of C(OR 3) 4 I. acetals or ketals having a formula of R 1 R 2 C(OR 3) 2 II. orthoesters having a formula of R 1 C(OR 3) 3 and III. orthocarbonates having a formula of C(OR 3) 4 wherein R 1 is selected from the group consisting of hydrogen, C 1 to C 10 linear or branched alkyl, C 3 to C 10 linear or branched cyclic alkyl, C 2 to C 10 alkenyl, C 2 to C 10 alkynyl, and C 3 to C 10 aromatic hydrocarbon R 2 and R 3 are independently selected from the group consisting of C 1 to C 10 linear or branched alkyl,, C 3 to C 10 linear or branched cyclic alkyl, C 2 to C 10 alkenyl, C 2 to C 10 alkynyl, and C 3 to C 10 aromatic hydrocarbon and wherein the precursor is selected from the group consisting of organoaminosilanes, organoaminodisilanes, organoaminotrisilylamines, organoaminosiloxanes, organoaminocyclosiloxanes, and organoaminotitanium, organoaminohafnium, organoaminozirconium, organoaminotantalum, organoaminotungsten, organoaminomolybdenum, organoaminoaluminum, alkylaluminum, and metal alkoxides.