A method of manufacturing at least one electronic device, comprising the following steps: providing a carrier; and forming an IC integrated substrate on the carrier, the IC integrated substrate being a double-sided substrate and having a multilayer interconnection structure, with a first dielectric layer attached to the carrier and with metal layers (22, 24, 26) and further dielectric layers (16, 18, 20) alternately, sequentially formed on the first dielectric layer while the first metal layer is formed on the first dielectric layer before the first of the further dielectric layers; wherein the dielectric layers (14, 16, 18, 20) are formed by spin coating; wherein the first dielectric layer is spin coated on the carrier without any adhesive treatment performed to the interface between the carrier and the first dielectric layer or after performing an adhesion-diminishing treatment to the interface between the carrier and the first dielectric layer; wherein the forming the IC integrated substrate on the carrier comprises forming residual dielectric layer material attached to outer periphery of the carrier and the IC integrated substrate, the residual dielectric layer material being the excess on the edge of the carrier from materials that are used to form, by the spin-coating, the plurality of dielectric layers (14, 16, 18, 20) in the IC integrated substrate, left on the outer periphery of the carrier and of the IC integrated substrate when no edge-washing is performed, wherein the residual dielectric layer material acts to fix and bond the carrier and the IC integrated substrate; wherein the material of the carrier is glass, ceramic, silicon wafer, sapphire substrate, gallium arsenide, polyimide or metal and the dielectric layer material is an organic material; the method further comprising: cutting at least one piece from the IC integrated substrate, so that each piece cut from the IC integrated substrate naturally separates from the carrier to form an electronic device, wherein each electronic device is separated, in the process of said cutting, from the residual dielectric layer material attached to the outer periphery of the IC integrated substrate, said natural separation occurring with no or little external force applied and without damaging the structures of the IC integrated substrate and the carrier, wherein the little external force is sticking by tape, clamping by fixtures or vacuum suction. providing a carrier; and forming an IC integrated substrate on the carrier, the IC integrated substrate being a double-sided substrate and having a multilayer interconnection structure, with a first dielectric layer attached to the carrier and with metal layers (22, 24, 26) and further dielectric layers (16, 18, 20) alternately, sequentially formed on the first dielectric layer while the first metal layer is formed on the first dielectric layer before the first of the further dielectric layers; wherein the dielectric layers (14, 16, 18, 20) are formed by spin coating; wherein the first dielectric layer is spin coated on the carrier without any adhesive treatment performed to the interface between the carrier and the first dielectric layer or after performing an adhesion-diminishing treatment to the interface between the carrier and the first dielectric layer; wherein the forming the IC integrated substrate on the carrier comprises forming residual dielectric layer material attached to outer periphery of the carrier and the IC integrated substrate, the residual dielectric layer material being the excess on the edge of the carrier from materials that are used to form, by the spin-coating, the plurality of dielectric layers (14, 16, 18, 20) in the IC integrated substrate, left on the outer periphery of the carrier and of the IC integrated substrate when no edge-washing is performed, wherein the residual dielectric layer material acts to fix and bond the carrier and the IC integrated substrate; wherein the material of the carrier is glass, ceramic, silicon wafer, sapphire substrate, gallium arsenide, polyimide or metal and the dielectric layer material is an organic material; the method further comprising: cutting at least one piece from the IC integrated substrate, so that each piece cut from the IC integrated substrate naturally separates from the carrier to form an electronic device, wherein each electronic device is separated, in the process of said cutting, from the residual dielectric layer material attached to the outer periphery of the IC integrated substrate, said natural separation occurring with no or little external force applied and without damaging the structures of the IC integrated substrate and the carrier, wherein the little external force is sticking by tape, clamping by fixtures or vacuum suction.