An imaging device comprising: a semiconductor substrate (60, 101) having a first surface (60a, 101a), the semiconductor substrate including: a first layer (61, 109) containing an impurity of a first conductivity type; a second layer (62, 108) containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer than the first layer to the first surface; and a pixel (10, 10A) including: a photoelectric converter (12, 112) configured to convert light into charge; a first diffusion region (67n, 103) containing an impurity of the first conductivity type, the first diffusion region facing the first layer (61, 109) via the second layer (62, 108), configured to store at least a part of the charge; and a second diffusion region (68an, 104) being a diffusion region closest to the first diffusion region (67n, 103) among diffusion regions containing an impurity of the first conductivity type, the diffusion regions facing the first layer (61, 109) via the second layer (62, 108), characterized in that the distance between the second diffusion region (68an, 104) and the first layer (61, 109) is equal to or less than 1.5 times the distance between the second diffusion region (68an, 104) and the first diffusion region (67n, 103). a semiconductor substrate (60, 101) having a first surface (60a, 101a), the semiconductor substrate including: a first layer (61, 109) containing an impurity of a first conductivity type; a second layer (62, 108) containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer than the first layer to the first surface; and a first layer (61, 109) containing an impurity of a first conductivity type; a second layer (62, 108) containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer than the first layer to the first surface; and a pixel (10, 10A) including: a photoelectric converter (12, 112) configured to convert light into charge; a first diffusion region (67n, 103) containing an impurity of the first conductivity type, the first diffusion region facing the first layer (61, 109) via the second layer (62, 108), configured to store at least a part of the charge; and a second diffusion region (68an, 104) being a diffusion region closest to the first diffusion region (67n, 103) among diffusion regions containing an impurity of the first conductivity type, the diffusion regions facing the first layer (61, 109) via the second layer (62, 108), characterized in that a photoelectric converter (12, 112) configured to convert light into charge; a first diffusion region (67n, 103) containing an impurity of the first conductivity type, the first diffusion region facing the first layer (61, 109) via the second layer (62, 108), configured to store at least a part of the charge; and a second diffusion region (68an, 104) being a diffusion region closest to the first diffusion region (67n, 103) among diffusion regions containing an impurity of the first conductivity type, the diffusion regions facing the first layer (61, 109) via the second layer (62, 108), characterized in that the distance between the second diffusion region (68an, 104) and the first layer (61, 109) is equal to or less than 1.5 times the distance between the second diffusion region (68an, 104) and the first diffusion region (67n, 103).