Method for producing a rear emitter solar cell structure having a heterojunction, wherein - to form an absorber of the rear emitter solar cell structure, a crystalline semiconductor substrate having a doping of a first conductivity type is provided; - on a front side of the semiconductor substrate at least one front intrinsic layer is produced from an intrinsic, amorphous semiconductor material; - on the at least one front intrinsic layer at least one front doping layer is produced from an amorphous semiconductor material having a doping of the first conductivity type, which is higher than the doping of the semiconductor substrate; - on a rear side of the semiconductor substrate at least one rear intrinsic layer is produced from an intrinsic, amorphous semiconductor material; - to form an emitter of the rear emitter solar cell structure having a heterojunction, on the at least one rear intrinsic layer, at least one rear doping layer is produced from an amorphous semiconductor material having a doping of a second conductivity type, which is opposite to the first conductivity type; - at least one electrically conductive, transparent front conduction layer is produced on the at least one front doping layer; - at least one electrically conductive, transparent rear conduction layer is produced on the at least one rear doping layer; - a front contact is produced on the at least one electrically conductive, transparent front conduction layer; and - a rear contact is produced on the at least one electrically conductive, transparent rear conduction layer, characterized in that the front and rear intrinsic layers (3, 4) and the front and rear doping layers (5, 6) are produced in the following order of steps: - producing the at least one rear intrinsic layer on the rear side of the semiconductor substrate; - then producing the at least one front intrinsic layer on the front side of the semiconductor substrate; - then producing the at least one front doping layer on the at least one front intrinsic layer; and - then producing the at least one rear doping layer on the at least one rear intrinsic layer. - to form an absorber of the rear emitter solar cell structure, a crystalline semiconductor substrate having a doping of a first conductivity type is provided; - on a front side of the semiconductor substrate at least one front intrinsic layer is produced from an intrinsic, amorphous semiconductor material; - on the at least one front intrinsic layer at least one front doping layer is produced from an amorphous semiconductor material having a doping of the first conductivity type, which is higher than the doping of the semiconductor substrate; - on a rear side of the semiconductor substrate at least one rear intrinsic layer is produced from an intrinsic, amorphous semiconductor material; - to form an emitter of the rear emitter solar cell structure having a heterojunction, on the at least one rear intrinsic layer, at least one rear doping layer is produced from an amorphous semiconductor material having a doping of a second conductivity type, which is opposite to the first conductivity type; - at least one electrically conductive, transparent front conduction layer is produced on the at least one front doping layer; - at least one electrically conductive, transparent rear conduction layer is produced on the at least one rear doping layer; - a front contact is produced on the at least one electrically conductive, transparent front conduction layer; and - a rear contact is produced on the at least one electrically conductive, transparent rear conduction layer, - producing the at least one rear intrinsic layer on the rear side of the semiconductor substrate; - then producing the at least one front intrinsic layer on the front side of the semiconductor substrate; - then producing the at least one front doping layer on the at least one front intrinsic layer; and - then producing the at least one rear doping layer on the at least one rear intrinsic layer.