An optoelectronic component comprising: a silicon on insulator platform; an optically active region, OAR, including a waveguide ridge and a slab, the OAR being formed of a single piece of Ge or SiGe epitaxially grown material onto the SOI platform, the OAR having an upper surface and a lower surface; characterized in that the optoelectronic component further comprises: a lower doped region, created by ion implantation in the SOI platform, wherein the lower doped region is located at and/or adjacent to at least a portion of the lower surface of the OAR, and extends laterally outwards from the waveguide ridge in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of the upper surface of the waveguide ridge of the OAR, and extends laterally outwards from the waveguide ridge in a second direction; and an intrinsic region located between the lower doped region and the upper doped region; wherein the lower doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the lower doped region is higher than the dopant concentration in the first doped zone of the lower doped region; wherein the upper doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the upper doped region is higher than the dopant concentration in the first doped zone of the upper doped region; and wherein the second doped zone of the lower doped region is located in a region of the slab, the region of the slab having a reduced height as compared to adjacent portions of the slab. a silicon on insulator platform; an optically active region, OAR, including a waveguide ridge and a slab, the OAR being formed of a single piece of Ge or SiGe epitaxially grown material onto the SOI platform, the OAR having an upper surface and a lower surface; characterized in that the optoelectronic component further comprises: a lower doped region, created by ion implantation in the SOI platform, wherein the lower doped region is located at and/or adjacent to at least a portion of the lower surface of the OAR, and extends laterally outwards from the waveguide ridge in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of the upper surface of the waveguide ridge of the OAR, and extends laterally outwards from the waveguide ridge in a second direction; and an intrinsic region located between the lower doped region and the upper doped region; wherein the lower doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the lower doped region is higher than the dopant concentration in the first doped zone of the lower doped region; wherein the upper doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the upper doped region is higher than the dopant concentration in the first doped zone of the upper doped region; and wherein the second doped zone of the lower doped region is located in a region of the slab, the region of the slab having a reduced height as compared to adjacent portions of the slab. a lower doped region, created by ion implantation in the SOI platform, wherein the lower doped region is located at and/or adjacent to at least a portion of the lower surface of the OAR, and extends laterally outwards from the waveguide ridge in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of the upper surface of the waveguide ridge of the OAR, and extends laterally outwards from the waveguide ridge in a second direction; and an intrinsic region located between the lower doped region and the upper doped region; wherein the lower doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the lower doped region is higher than the dopant concentration in the first doped zone of the lower doped region; wherein the upper doped region comprises a first doped zone and a second doped zone; wherein the dopant concentration in the second doped zone of the upper doped region is higher than the dopant concentration in the first doped zone of the upper doped region; and wherein the second doped zone of the lower doped region is located in a region of the slab, the region of the slab having a reduced height as compared to adjacent portions of the slab.