A method for in situ measuring the minority carrier lifetime in a semiconductor material (Ec) comprising at least a first junction by measuring a first photoluminescence signal, said method comprising: A. illuminating at least the first junction of the semiconductor material (Ec) with a first light radiation (L1 in) emitted at a plurality of average intensities I1 i, i∈[1,m] and at a first wavelength adapted to generate a first photoluminescence signal in said first junction of the semiconductor material; for each i∈[1,m] we perform the sub-steps consisting of: A1- calculating the photogeneration rate G i of charge carriers; A2-modulating said first light radiation successively at a plurality n>1 of distinct modulation frequencies ω j j∈[1,n] and for each j∈[1,n]: A21-detecting the first photoluminescence signal and measuring the phase shift Φ ij between an amplitude of the first incident light radiation (L1 in) and an amplitude of the first photoluminescence signal A3-calculating the minority carrier lifetime T i from measurements of said phase shift Φ ij, with j∈[1,n]; A4-calculating the minority carrier density Δn i from the minority carrier lifetime T i and the photogeneration rate G i, B. determining a continuous function, called the first function, representative of the evolution of the minority carrier lifetime as a function of the minority carrier density from the values determined in step A4, C. calculating a corrected minority carrier lifetime value for said plurality of average intensities, said calculation being performed from the derivative of the first function, the calculation of the minority carrier lifetime and the photogeneration rate, D. determining a continuous function, the so-called second function, calculating the corrected minority carrier lifetime as a function of the minority carrier density, from the corrected minority carrier lifetime values determined in step C. A. illuminating at least the first junction of the semiconductor material (Ec) with a first light radiation (L1 in) emitted at a plurality of average intensities I1 i, i∈[1,m] and at a first wavelength adapted to generate a first photoluminescence signal in said first junction of the semiconductor material; for each i∈[1,m] we perform the sub-steps consisting of: A1- calculating the photogeneration rate G i of charge carriers; A2-modulating said first light radiation successively at a plurality n>1 of distinct modulation frequencies ω j j∈[1,n] and for each j∈[1,n]: A21-detecting the first photoluminescence signal and measuring the phase shift Φ ij between an amplitude of the first incident light radiation (L1 in) and an amplitude of the first photoluminescence signal A3-calculating the minority carrier lifetime T i from measurements of said phase shift Φ ij, with j∈[1,n]; A4-calculating the minority carrier density Δn i from the minority carrier lifetime T i and the photogeneration rate G i, A1- calculating the photogeneration rate G i of charge carriers; A2-modulating said first light radiation successively at a plurality n>1 of distinct modulation frequencies ω j j∈[1,n] and for each j∈[1,n]: A21-detecting the first photoluminescence signal and measuring the phase shift Φ ij between an amplitude of the first incident light radiation (L1 in) and an amplitude of the first photoluminescence signal A3-calculating the minority carrier lifetime T i from measurements of said phase shift Φ ij, with j∈[1,n]; A4-calculating the minority carrier density Δn i from the minority carrier lifetime T i and the photogeneration rate G i, A21-detecting the first photoluminescence signal and measuring the phase shift Φ ij between an amplitude of the first incident light radiation (L1 in) and an amplitude of the first photoluminescence signal A3-calculating the minority carrier lifetime T i from measurements of said phase shift Φ ij, with j∈[1,n]; A4-calculating the minority carrier density Δn i from the minority carrier lifetime T i and the photogeneration rate G i, B. determining a continuous function, called the first function, representative of the evolution of the minority carrier lifetime as a function of the minority carrier density from the values determined in step A4, C. calculating a corrected minority carrier lifetime value for said plurality of average intensities, said calculation being performed from the derivative of the first function, the calculation of the minority carrier lifetime and the photogeneration rate, D. determining a continuous function, the so-called second function, calculating the corrected minority carrier lifetime as a function of the minority carrier density, from the corrected minority carrier lifetime values determined in step C.