A surface emitting laser device comprising: a substrate; a base part formed on the substrate and smaller than the substrate when viewed in a direction orthogonal to a surface of the substrate; a first semiconductor distributed Bragg reflector formed within the base part, the first semiconductor distributed Bragg reflector comprising alternating layers of high refractive index and low refractive index, the first semiconductor distributed Bragg reflector including aluminum; a second semiconductor distributed Bragg reflector comprising alternating layers of high refractive index and low refractive index; an active layer between the first and second semiconductor distributed Bragg reflectors; and a mesa structure formed on the first semiconductor distributed Bragg reflector of the base part, the mesa structure having an outer shape that is smaller than the one of the base part when viewed in a direction orthogonal to a surface of the substrate and including at least a part of the second semiconductor distributed Bragg reflector, wherein a side surface of the first semiconductor distributed Bragg reflector of the base part is coated with a passivation film including an oxide of aluminum and a protection film, characterized in that when viewed in a direction orthogonal to a surface of the substrate, an outer shape of the first semiconductor distributed Bragg reflector of the base part is configured such that any corner of the outer shape is greater than 90 degrees or has a curved shape where each of the tangent lines corresponding to all the points on the curved shape contacts only one point of the curved shape of the corner. a substrate; a base part formed on the substrate and smaller than the substrate when viewed in a direction orthogonal to a surface of the substrate; a first semiconductor distributed Bragg reflector formed within the base part, the first semiconductor distributed Bragg reflector comprising alternating layers of high refractive index and low refractive index, the first semiconductor distributed Bragg reflector including aluminum; a second semiconductor distributed Bragg reflector comprising alternating layers of high refractive index and low refractive index; an active layer between the first and second semiconductor distributed Bragg reflectors; and a mesa structure formed on the first semiconductor distributed Bragg reflector of the base part, the mesa structure having an outer shape that is smaller than the one of the base part when viewed in a direction orthogonal to a surface of the substrate and including at least a part of the second semiconductor distributed Bragg reflector, wherein a side surface of the first semiconductor distributed Bragg reflector of the base part is coated with a passivation film including an oxide of aluminum and a protection film, characterized in that when viewed in a direction orthogonal to a surface of the substrate, an outer shape of the first semiconductor distributed Bragg reflector of the base part is configured such that any corner of the outer shape is greater than 90 degrees or has a curved shape where each of the tangent lines corresponding to all the points on the curved shape contacts only one point of the curved shape of the corner.