A method for manufacturing an electronic device comprising a vertical interconnect through a semiconductor substrate (400; 500; 600) having a first surface on a first side (402; 502; 602) and a second surface, the method comprising the successive steps of: - providing the substrate (400; 500; 600); - providing the substrate with a trench (406; 506; 606) by anisotropic removal of material from the first side (402; 502; 602) of the semiconductor substrate such that the trench (406; 506; 606) formed has a bottom with a bottom area located within the semiconductor substrate (400; 500; 600) in between the first and second surface, - providing a sacrificial buried layer (420; 520; 620) such that it is provided in between the first and the second surfaces of the semiconductor substrate by forming a cavity at the bottom of the trench (406; 506; 606), the cavity having a cross section parallel to the plane of the bottom of the trench, which cross section is larger than the area of the bottom of the trench, and filling at least part of the cavity with a sacrificial material, - providing the substrate (400; 500; 600) with a hole (418; 518; 618) extending from the second surface to the sacrificial buried layer (420; 520; 620), by removing material from the second side (404; 504; 604) of the substrate selectively with respect to the sacrificial buried layer (420; 520; 620), the sacrificial buried layer (420; 520; 620) therewith being exposed over a second area, the sacrificial buried layer (420; 520; 620) having a second cross section taken parallel to the plane of the second area which second cross section overlaps with and is equal to or larger than the second area, and said bottom area being smaller than the second area, - etching the sacrificial buried layer of the substrate (400; 500; 600) such that the hole (418; 518; 618) and the trench (406; 506; 606) are opened to create a vertical interconnect hole through the substrate (400; 500; 600) and filling the vertical interconnect hole with a conductive material. - providing the substrate (400; 500; 600); - providing the substrate with a trench (406; 506; 606) by anisotropic removal of material from the first side (402; 502; 602) of the semiconductor substrate such that the trench (406; 506; 606) formed has a bottom with a bottom area located within the semiconductor substrate (400; 500; 600) in between the first and second surface, - providing a sacrificial buried layer (420; 520; 620) such that it is provided in between the first and the second surfaces of the semiconductor substrate by forming a cavity at the bottom of the trench (406; 506; 606), the cavity having a cross section parallel to the plane of the bottom of the trench, which cross section is larger than the area of the bottom of the trench, and filling at least part of the cavity with a sacrificial material, - providing the substrate (400; 500; 600) with a hole (418; 518; 618) extending from the second surface to the sacrificial buried layer (420; 520; 620), by removing material from the second side (404; 504; 604) of the substrate selectively with respect to the sacrificial buried layer (420; 520; 620), the sacrificial buried layer (420; 520; 620) therewith being exposed over a second area, the sacrificial buried layer (420; 520; 620) having a second cross section taken parallel to the plane of the second area which second cross section overlaps with and is equal to or larger than the second area, and said bottom area being smaller than the second area, - etching the sacrificial buried layer of the substrate (400; 500; 600) such that the hole (418; 518; 618) and the trench (406; 506; 606) are opened to create a vertical interconnect hole through the substrate (400; 500; 600) and filling the vertical interconnect hole with a conductive material.