A light-sensing apparatus comprising: an array of light-sensing pixels, each of the light-sensing pixels including a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor and a conductive light-shielding film on a light-incident surface of the switch transistor; wherein the switch transistor comprises a gate electrode on a substrate, a gate insulating film on the gate electrode, a channel film on the gate insulating film, a source electrode on a first side surface of the channel film and a drain electrode on a second side surface of the channel film and an insulating layer that covers the source electrode, the drain electrode and the channel film; the light-shielding film is at least partially on the insulating layer to cover the channel film of the switch transistor, and the light-sensing apparatus further comprises a first gate driver configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels, wherein the first gate driver includes a plurality of gate lines (Vgate) that are arranged in a row direction wherein each of the gate lines (Vgate) is connected to the gate electrode of the switch transistors in the light-sensing pixels arranged along the same row to provide the gate voltage to the light-sensing pixels that are arranged along the same row; and a signal output unit configured to receive the light-sensing signal from each of the light-sensing pixels, the signal output unit being configured to output a data signal; characterised in that the light sensor transistor and switch transistor each have a channel film containing an oxide semiconductor material, and the light sensing apparatus further comprises a plurality of bias lines that are arranged in the row direction wherein each of the bias lines (Vbias) is connected to the conductive light-shielding film of the light-sensing pixels arranged along the same row to provide a negative bias voltage to the conductive light shielding film and thereby form a negative potential over the gate electrode of the switch transistor of the light sensing pixels, wherein the first gate driver is configured to apply the negative bias voltage to the plurality of bias lines (Vbias) in order to reduce and/or prevent a threshold voltage of the switch transistors of the light sensing pixels from being shifted. an array of light-sensing pixels, each of the light-sensing pixels including a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor and a conductive light-shielding film on a light-incident surface of the switch transistor; wherein the switch transistor comprises a gate electrode on a substrate, a gate insulating film on the gate electrode, a channel film on the gate insulating film, a source electrode on a first side surface of the channel film and a drain electrode on a second side surface of the channel film and an insulating layer that covers the source electrode, the drain electrode and the channel film; the light-shielding film is at least partially on the insulating layer to cover the channel film of the switch transistor, and the light-sensing apparatus further comprises a first gate driver configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels, wherein the first gate driver includes a plurality of gate lines (Vgate) that are arranged in a row direction wherein each of the gate lines (Vgate) is connected to the gate electrode of the switch transistors in the light-sensing pixels arranged along the same row to provide the gate voltage to the light-sensing pixels that are arranged along the same row; and a signal output unit configured to receive the light-sensing signal from each of the light-sensing pixels, the signal output unit being configured to output a data signal; characterised in that the light sensor transistor and switch transistor each have a channel film containing an oxide semiconductor material, and the light sensing apparatus further comprises a plurality of bias lines that are arranged in the row direction wherein each of the bias lines (Vbias) is connected to the conductive light-shielding film of the light-sensing pixels arranged along the same row to provide a negative bias voltage to the conductive light shielding film and thereby form a negative potential over the gate electrode of the switch transistor of the light sensing pixels, wherein the first gate driver is configured to apply the negative bias voltage to the plurality of bias lines (Vbias) in order to reduce and/or prevent a threshold voltage of the switch transistors of the light sensing pixels from being shifted