A semiconductor light emitting device (110, 112, 113, 114) comprising: a stacked body including: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type spaced from the first semiconductor layer in a first direction; and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first side surface non-parallel to a plane perpendicular to the first direction; a wavelength conversion layer configured to convert wavelength of light emitted from the first light emitting layer, the first semiconductor layer being placed between the first light emitting layer and the wavelength conversion layer; a first metal layer including: a first side surface portion opposed to at least part of the wavelength conversion layer, and the first side surface; and a first bottom surface portion opposed to the second semiconductor layer, the first metal layer being electrically connected to the second semiconductor layer; a first insulating section provided between the first side surface and the first side surface portion and between the wavelength conversion layer and the first side surface portion, and electrically insulating the first semiconductor layer from the first metal layer; a first electrode provided between the first semiconductor layer and the first metal layer and electrically connected to the first semiconductor layer; a second insulating section, the second insulating section including: a wiring layer electrically connected to the first electrode; and an insulating layer provided between the wiring layer and the first metal layer, and electrically insulating the first electrode and the wiring layer from the first metal layer; and an other electrode, the second insulating section extending between the first metal layer and the other electrode, and the wiring layer being electrically connected to the other electrode. a stacked body including: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type spaced from the first semiconductor layer in a first direction; and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type spaced from the first semiconductor layer in a first direction; and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first side surface non-parallel to a plane perpendicular to the first direction; a wavelength conversion layer configured to convert wavelength of light emitted from the first light emitting layer, the first semiconductor layer being placed between the first light emitting layer and the wavelength conversion layer; a first metal layer including: a first side surface portion opposed to at least part of the wavelength conversion layer, and the first side surface; and a first bottom surface portion opposed to the second semiconductor layer, a first side surface portion opposed to at least part of the wavelength conversion layer, and the first side surface; and a first bottom surface portion opposed to the second semiconductor layer, the first metal layer being electrically connected to the second semiconductor layer; a first insulating section provided between the first side surface and the first side surface portion and between the wavelength conversion layer and the first side surface portion, and electrically insulating the first semiconductor layer from the first metal layer; a first electrode provided between the first semiconductor layer and the first metal layer and electrically connected to the first semiconductor layer; a second insulating section, the second insulating section including: a wiring layer electrically connected to the first electrode; and an insulating layer provided between the wiring layer and the first metal layer, and electrically insulating the first electrode and the wiring layer from the first metal layer; and a wiring layer electrically connected to the first electrode; and an insulating layer provided between the wiring layer and the first metal layer, and electrically insulating the first electrode and the wiring layer from the first metal layer; and an other electrode, the second insulating section extending between the first metal layer and the other electrode, and the wiring layer being electrically connected to the other electrode.