A semiconductor device comprising: a first semiconductor component including a first semiconductor substrate and a first wiring structure including at least one wiring layer and at least one insulation layer stacked on the first semiconductor substrate, the first semiconductor component having a first surface located on a side of the first wiring structure that is opposite to the first semiconductor substrate; and a second semiconductor component including a second semiconductor substrate and a second wiring structure including at least one wiring layer and at least one insulation layer stacked on the second semiconductor substrate, the second semiconductor component having a second surface located on a side of the second wiring structure opposite to the second semiconductor substrate, the first surface of the first semiconductor component and the second surface of the second semiconductor component being bonded together, wherein in a case where a region having a circumference corresponding to a shape obtained by projecting the first surface on a virtual plane parallel to the first surface in a normal direction of the virtual plane is a first region, a region having a circumference corresponding to a shape obtained by projecting the second surface on the virtual plane in the normal direction of the virtual plane is a second region, a region having a circumference corresponding to a shape obtained by projecting the first wiring structure on the virtual plane in the normal direction of the virtual plane is a third region, and a region having a circumference corresponding to a shape obtained by projecting the second wiring structure on the virtual plane in the normal direction of the virtual plane is a fourth region, an area of the first region is smaller than an area of the second region, an entire circumference of the first region is included in the second region, characterized in that an area of the fourth region is smaller than an area of the third region, and an entire circumference of the fourth region is included in the third region. a first semiconductor component including a first semiconductor substrate and a first wiring structure including at least one wiring layer and at least one insulation layer stacked on the first semiconductor substrate, the first semiconductor component having a first surface located on a side of the first wiring structure that is opposite to the first semiconductor substrate; and a second semiconductor component including a second semiconductor substrate and a second wiring structure including at least one wiring layer and at least one insulation layer stacked on the second semiconductor substrate, the second semiconductor component having a second surface located on a side of the second wiring structure opposite to the second semiconductor substrate, the first surface of the first semiconductor component and the second surface of the second semiconductor component being bonded together, wherein in a case where a region having a circumference corresponding to a shape obtained by projecting the first surface on a virtual plane parallel to the first surface in a normal direction of the virtual plane is a first region, a region having a circumference corresponding to a shape obtained by projecting the second surface on the virtual plane in the normal direction of the virtual plane is a second region, a region having a circumference corresponding to a shape obtained by projecting the first wiring structure on the virtual plane in the normal direction of the virtual plane is a third region, and a region having a circumference corresponding to a shape obtained by projecting the second wiring structure on the virtual plane in the normal direction of the virtual plane is a fourth region, an area of the first region is smaller than an area of the second region, an entire circumference of the first region is included in the second region, characterized in that an area of the fourth region is smaller than an area of the third region, and an entire circumference of the fourth region is included in the third region.