Method for manufacturing a reverse-conducting semiconductor device, which comprises a freewheeling diode and an insulated gate bipolar transistor on a common wafer of a first conductivity type, wherein the insulated gate bipolar transistor comprises an emitter side and a collector side, wherein the wafer with a first side and a second side opposite the first side is provided, the first side forming the emitter side and the second side forming the collector side of the insulated gate bipolar transistor, and for the manufacturing of the reverse-conducting semiconductor device on the collector side the following steps are performed: - at least one third layer of a first or second conductivity type or a first layer, which is of the same conductivity type as the third layer and which is a continuous layer, is created on the second side before at least one second layer of a different conductivity type than the third layer is created on the second side, the at least one second and third layers (2, 3) being arranged alternately in the finalized reverse-conducting semiconductor device, whereby a shadow mask with at least one opening, which shadow mask is not attached to the wafer, is applied on the second side and afterwards the at least one third layer is created through the at least one opening of the shadow mask afterwards, the same shadow mask is used for depositing metal through the openings of the shadow mask on the third layer, thereby creating at least one conductive island, which is part of the second electrical contact of the finalized device, afterwards, the shadow mask is removed and the at least one electrical conductive island is used as a mask for the creation of the at least one second layer, or the first layer is created on the second side, afterwards a shadow mask with at least one opening is applied on the first layer and at least one electrically conductive island, which is part of a second electrical contact in the finalized reverse-conducting semiconductor device, is created through the at least one opening of the shadow mask, afterwards, the shadow mask is removed and the at least one electrical conductive island is used as a mask for the creation of the at least one second layer and those parts of the first layer, which are covered by an electrical conductive island form the at least one third layer, and - afterwards a second electrical contact, which is in direct electrical contact to the at least one second and third layer (2, 3), is created on the second side. - at least one third layer of a first or second conductivity type or a first layer, which is of the same conductivity type as the third layer and which is a continuous layer, is created on the second side before at least one second layer of a different conductivity type than the third layer is created on the second side, the at least one second and third layers (2, 3) being arranged alternately in the finalized reverse-conducting semiconductor device, whereby a shadow mask with at least one opening, which shadow mask is not attached to the wafer, is applied on the second side and afterwards the at least one third layer is created through the at least one opening of the shadow mask afterwards, the same shadow mask is used for depositing metal through the openings of the shadow mask on the third layer, thereby creating at least one conductive island, which is part of the second electrical contact of the finalized device, afterwards, the shadow mask is removed and the at least one electrical conductive island is used as a mask for the creation of the at least one second layer, or the first layer is created on the second side, afterwards a shadow mask with at least one opening is applied on the first layer and at least one electrically conductive island, which is part of a second electrical contact in the finalized reverse-conducting semiconductor device, is created through the at least one opening of the shadow mask, afterwards, the shadow mask is removed and the at least one electrical conductive island is used as a mask for the creation of the at least one second layer and those parts of the first layer, which are covered by an electrical conductive island form the at least one third layer, and - afterwards a second electrical contact, which is in direct electrical contact to the at least one second and third layer (2, 3), is created on the second side.