An optical waveguide detector comprising: • a waveguide layer, an upper cladding layer, and an electrode layer that are stacked in a first direction, wherein the upper cladding layer is located between the waveguide layer and the electrode layer; • the waveguide layer comprises a silicon waveguide layer and a germanium waveguide layer, and the germanium waveguide layer is located between the silicon waveguide layer and the upper cladding layer; • the silicon waveguide layer comprises a P-type heavily silicon-doped area, a P-type lightly silicon-doped area, an N-type lightly silicon-doped area, and an N-type heavily silicon-doped area that are arranged next to each other in a second direction, the P-type lightly silicon-doped area is located between the P-type heavily silicon-doped area and the N-type lightly silicon-doped area, the N-type lightly silicon-doped area is located between the P-type lightly silicon-doped area and the N-type heavily silicon-doped area, and the second direction is perpendicular to the first direction, wherein the germanium waveguide layer partially covers and contacts the P-type lightly silicon-doped area and the N-type lightly silicon-doped area at a silicon/germanium interface formed between the silicon waveguide layer and the germanium waveguide layer; • the germanium waveguide layer comprises a first heavily germanium-doped area and a germanium-undoped area, first surface of the germanium waveguide layer comprises a surface of the first heavily germanium-doped area, the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction, a width of the first heavily germanium-doped area is greater than o and less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm; and • the upper cladding layer comprises a first metal filled through-hole, and the first metal filled through-hole connects the first heavily germanium-doped area to the electrode layer. • a waveguide layer, an upper cladding layer, and an electrode layer that are stacked in a first direction, wherein the upper cladding layer is located between the waveguide layer and the electrode layer; • the waveguide layer comprises a silicon waveguide layer and a germanium waveguide layer, and the germanium waveguide layer is located between the silicon waveguide layer and the upper cladding layer; • the silicon waveguide layer comprises a P-type heavily silicon-doped area, a P-type lightly silicon-doped area, an N-type lightly silicon-doped area, and an N-type heavily silicon-doped area that are arranged next to each other in a second direction, the P-type lightly silicon-doped area is located between the P-type heavily silicon-doped area and the N-type lightly silicon-doped area, the N-type lightly silicon-doped area is located between the P-type lightly silicon-doped area and the N-type heavily silicon-doped area, and the second direction is perpendicular to the first direction, wherein the germanium waveguide layer partially covers and contacts the P-type lightly silicon-doped area and the N-type lightly silicon-doped area at a silicon/germanium interface formed between the silicon waveguide layer and the germanium waveguide layer; • the germanium waveguide layer comprises a first heavily germanium-doped area and a germanium-undoped area, first surface of the germanium waveguide layer comprises a surface of the first heavily germanium-doped area, the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction, a width of the first heavily germanium-doped area is greater than o and less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm; and • the upper cladding layer comprises a first metal filled through-hole, and the first metal filled through-hole connects the first heavily germanium-doped area to the electrode layer.