A display device, comprising: a substrate; a pixel on the substrate, the pixel including: a first thin film transistor on the substrate, the first TFT including: a first gate electrode on the substrate, at least a first part of a gate insulating film on the first gate electrode, a first active layer formed of polycrystalline silicon on the first part of the gate insulating film, wherein a bottom surface of the first active layer faces the first gate electrode; and a first source electrode and a first drain electrode contacting a top surface of the first active layer; a second TFT on the substrate, the second TFT including a second active layer formed of oxide semiconductor; a light-emitting device electrically connected to the first TFT; wherein the second TFT further includes: a second gate electrode on the second active layer, wherein a bottom surface of the second gate electrode faces the second active layer, and a second source electrode and a second drain electrode contacting a top surface of the second active layer, further comprising a light-shielding layer on the substrate overlapping with the second active layer, wherein the light-shielding layer is in a same layer as the first gate electrode of the first TFT. a substrate; a pixel on the substrate, the pixel including: a first thin film transistor on the substrate, the first TFT including: a first gate electrode on the substrate, at least a first part of a gate insulating film on the first gate electrode, a first active layer formed of polycrystalline silicon on the first part of the gate insulating film, wherein a bottom surface of the first active layer faces the first gate electrode; and a first source electrode and a first drain electrode contacting a top surface of the first active layer; a second TFT on the substrate, the second TFT including a second active layer formed of oxide semiconductor; a light-emitting device electrically connected to the first TFT; wherein the second TFT further includes: a second gate electrode on the second active layer, wherein a bottom surface of the second gate electrode faces the second active layer, and a second source electrode and a second drain electrode contacting a top surface of the second active layer, further comprising a light-shielding layer on the substrate overlapping with the second active layer, wherein the light-shielding layer is in a same layer as the first gate electrode of the first TFT. a first thin film transistor on the substrate, the first TFT including: a first gate electrode on the substrate, at least a first part of a gate insulating film on the first gate electrode, a first active layer formed of polycrystalline silicon on the first part of the gate insulating film, wherein a bottom surface of the first active layer faces the first gate electrode; and a first source electrode and a first drain electrode contacting a top surface of the first active layer; a first gate electrode on the substrate, at least a first part of a gate insulating film on the first gate electrode, a first active layer formed of polycrystalline silicon on the first part of the gate insulating film, wherein a bottom surface of the first active layer faces the first gate electrode; and a first source electrode and a first drain electrode contacting a top surface of the first active layer; a second TFT on the substrate, the second TFT including a second active layer formed of oxide semiconductor; a light-emitting device electrically connected to the first TFT; wherein the second TFT further includes: a second gate electrode on the second active layer, wherein a bottom surface of the second gate electrode faces the second active layer, and a second source electrode and a second drain electrode contacting a top surface of the second active layer, further comprising a light-shielding layer on the substrate overlapping with the second active layer, wherein the light-shielding layer is in a same layer as the first gate electrode of the first TFT. a second gate electrode on the second active layer, wherein a bottom surface of the second gate electrode faces the second active layer, and a second source electrode and a second drain electrode contacting a top surface of the second active layer, further comprising a light-shielding layer on the substrate overlapping with the second active layer, wherein the light-shielding layer is in a same layer as the first gate electrode of the first TFT.