A computer implemented method for calculating die layout of a wafer, comprising selecting, based on a distribution array of a plurality of dies in the wafer, one die as a reference die, making, based on a first step and the distribution array of the plurality of dies, a plurality of first movements of a wafer center in a preset region of the reference die to determine a first coverage region of the wafer after each first movement, and determining a feasible region of the reference die based on a number of complete dies in each first coverage region, where the method further comprises: making, based on a second step, a plurality of second movements of the wafer center in the feasible region to determine a second coverage region of the wafer for each second movement, and determining a maximum number of complete dies in the second coverage regions; after the maximum number of complete dies is determined, determining a minimum number of shots to cover all the dies on the wafer by placing, in sequence, the reference die at different die locations in a single-shot region of a lithography device according to a die location distribution pattern for the single-shot region; and determining a location of each die in the wafer based on the maximum number of complete dies and the minimum number of shots to cover all the dies so as to generate the die layout of the wafer (S 140), wherein selecting, based on a distribution array of a plurality of dies in the wafer, one die as a reference die, making, based on a first step and the distribution array of the plurality of dies, a plurality of first movements of a wafer center in a preset region of the reference die to determine a first coverage region of the wafer after each first movement, and determining a feasible region of the reference die based on a number of complete dies in each first coverage region comprises: making, based on the first step, the plurality of first movements of the wafer center in the preset region of the reference die by using one die in the distribution array of the plurality of dies as the reference die; determining, after each first movement, the first coverage region of the wafer according to a current location of the wafer center, and calculating the number of complete dies in the first coverage region; and determining locations of the wafer centers when the number of complete dies reaches a maximum value, and determining a wafer region formed by the wafer centers as the feasible region. selecting, based on a distribution array of a plurality of dies in the wafer, one die as a reference die, making, based on a first step and the distribution array of the plurality of dies, a plurality of first movements of a wafer center in a preset region of the reference die to determine a first coverage region of the wafer after each first movement, and determining a feasible region of the reference die based on a number of complete dies in each first coverage region, where the method further comprises: making, based on a second step, a plurality of second movements of the wafer center in the feasible region to determine a second coverage region of the wafer for each second movement, and determining a maximum number of complete dies in the second coverage regions; after the maximum number of complete dies is determined, determining a minimum number of shots to cover all the dies on the wafer by placing, in sequence, the reference die at different die locations in a single-shot region of a lithography device according to a die location distribution pattern for the single-shot region; and determining a location of each die in the wafer based on the maximum number of complete dies and the minimum number of shots to cover all the dies so as to generate the die layout of the wafer (S 140), wherein selecting, based on a distribution array of a plurality of dies in the wafer, one die as a reference die, making, based on a first step and the distribution array of the plurality of dies, a plurality of first movements of a wafer center in a preset region of the reference die to determine a first coverage region of the wafer after each first movement, and determining a feasible region of the reference die based on a number of complete dies in each first coverage region comprises: making, based on the first step, the plurality of first movements of the wafer center in the preset region of the reference die by using one die in the distribution array of the plurality of dies as the reference die; determining, after each first movement, the first coverage region of the wafer according to a current location of the wafer center, and calculating the number of complete dies in the first coverage region; and determining locations of the wafer centers when the number of complete dies reaches a maximum value, and determining a wafer region formed by the wafer centers as the feasible region.