A nitride semiconductor light emitting device comprising: a substrate, an n-side nitride semiconductor layer formed on said substrate, a p-side nitride semiconductor layer formed on said n-side nitride semiconductor layer, a light transmitting electrode formed on said p-side nitride semiconductor layer, a p-side pad electrode formed on said p-side nitride semiconductor layer for the connection with an outside circuit, and an n-side pad electrode formed on the n-side nitride semiconductor layer for the connection with the outside circuit, wherein said light emitting device has a chip shape of a parallelogram having corners with obtuse angles on one diagonal and corners with acute angles on the other diagonal, said p-side pad electrode and said n-side pad electrode being arranged relatively nearer the corners with obtuse angles, and wherein said light transmitting electrode and said p-side nitride semiconductor layer have tapering-off-shaped end portions in plan view in: each region relatively nearer each respective corner with an acute angle than the corners with obtuse angles; and either one or two extended portions extending along respectively one or both sides of the n-side pad electrode on an opposite side to the p-side pad electrode with respect to a tangent line of the n-side pad electrode crossing a centerline at right angles, the centerline connecting the center of the n-side pad electrode and the center of the p-side pad electrode, wherein said tapering-off-shaped end portions have sides forming an angle of less than 90 degrees, in plan view, and wherein the taper angle in a plane perpendicular to the substrate of said end portions is smaller than the taper angle in a plane perpendicular to the substrate in a region of highest intensity of light emission. a substrate, an n-side nitride semiconductor layer formed on said substrate, a p-side nitride semiconductor layer formed on said n-side nitride semiconductor layer, a light transmitting electrode formed on said p-side nitride semiconductor layer, a p-side pad electrode formed on said p-side nitride semiconductor layer for the connection with an outside circuit, and an n-side pad electrode formed on the n-side nitride semiconductor layer for the connection with the outside circuit, wherein said light emitting device has a chip shape of a parallelogram having corners with obtuse angles on one diagonal and corners with acute angles on the other diagonal, said p-side pad electrode and said n-side pad electrode being arranged relatively nearer the corners with obtuse angles, and wherein said light transmitting electrode and said p-side nitride semiconductor layer have tapering-off-shaped end portions in plan view in: each region relatively nearer each respective corner with an acute angle than the corners with obtuse angles; and either one or two extended portions extending along respectively one or both sides of the n-side pad electrode on an opposite side to the p-side pad electrode with respect to a tangent line of the n-side pad electrode crossing a centerline at right angles, the centerline connecting the center of the n-side pad electrode and the center of the p-side pad electrode, each region relatively nearer each respective corner with an acute angle than the corners with obtuse angles; and either one or two extended portions extending along respectively one or both sides of the n-side pad electrode on an opposite side to the p-side pad electrode with respect to a tangent line of the n-side pad electrode crossing a centerline at right angles, the centerline connecting the center of the n-side pad electrode and the center of the p-side pad electrode, wherein said tapering-off-shaped end portions have sides forming an angle of less than 90 degrees, in plan view, and wherein the taper angle in a plane perpendicular to the substrate of said end portions is smaller than the taper angle in a plane perpendicular to the substrate in a region of highest intensity of light emission. wherein the taper angle in a plane perpendicular to the substrate of said end portions is smaller than the taper angle in a plane perpendicular to the substrate in a region of highest intensity of light emission.