A light emitting device comprising: a growth substrate; a first conductivity type semiconductor layer on the growth substrate; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; a second current spreading layer on the second conductivity type semiconductor layer, a first passivation layer surrounding the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer; a second connection layer electrically connected to the second current spreading layer through the first passivation layer; a first electrode layer electrically connected to the first conductivity type semiconductor layer; wherein: a first connection layer electrically connected to the first conductivity type semiconductor layer through the first passivation layer; a first light extracting structure layer including an electric conductive transparent material on the first passivation layer and the second connection layer, wherein the first light extracting structure layer is directly in contact with the second connection layer; a second electrode layer on the first light extracting structure layer, a second passivation layer on the first light extracting structure layer, and a third light extracting structure layer on the second passivation layer, a second light extracting structure layer having a second concave-convex structure under the growth substrate, a reflective layer under the second light extracting structure layer, wherein the second electrode layer is spaced apart from the first passivation layer, wherein the second electrode layer vertically overlaps with the first passivation layer, wherein the third light extracting structure layer comprises a third concave-convex structure, wherein the second passivation layer is interdisposed between the first light extracting structure layer and the third light extracting structure layer, and wherein the second electrode layer is disposed on a region where the second passivation layer and the third light extracting structure layer are selectively removed. a growth substrate; a first conductivity type semiconductor layer on the growth substrate; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; a second current spreading layer on the second conductivity type semiconductor layer, a first passivation layer surrounding the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer; a second connection layer electrically connected to the second current spreading layer through the first passivation layer; a first electrode layer electrically connected to the first conductivity type semiconductor layer; wherein: a first connection layer electrically connected to the first conductivity type semiconductor layer through the first passivation layer; a first light extracting structure layer including an electric conductive transparent material on the first passivation layer and the second connection layer, wherein the first light extracting structure layer is directly in contact with the second connection layer; a second electrode layer on the first light extracting structure layer, a second passivation layer on the first light extracting structure layer, and a third light extracting structure layer on the second passivation layer, a first connection layer electrically connected to the first conductivity type semiconductor layer through the first passivation layer; a first light extracting structure layer including an electric conductive transparent material on the first passivation layer and the second connection layer, wherein the first light extracting structure layer is directly in contact with the second connection layer; a second electrode layer on the first light extracting structure layer, a second passivation layer on the first light extracting structure layer, and a third light extracting structure layer on the second passivation layer, a second light extracting structure layer having a second concave-convex structure under the growth substrate, a reflective layer under the second light extracting structure layer, wherein the second electrode layer is spaced apart from the first passivation layer, wherein the second electrode layer vertically overlaps with the first passivation layer, wherein the third light extracting structure layer comprises a third concave-convex structure, wherein the second passivation layer is interdisposed between the first light extracting structure layer and the third light extracting structure layer, and wherein the second electrode layer is disposed on a region where the second passivation layer and the third light extracting structure layer are selectively removed.