A device for sensing a physical parameter, comprising: a sensor die (70, 80) comprising: a substrate made of a semiconductor material, the substrate having a first side, a second side substantially parallel to the first side opposite the first side, and a thickness defined by a distance from the first side to the second side; and a cavity formed on the second side of the sensor die (70, 80) creating an elastic element (72, 82) of the sensor die (70, 80) configured to bend in response to the physical parameter exerted on the sensor die (70, 80), the elastic element (72, 82) comprising: at least one rigid island (73, 83) formed within the cavity and having a thickness; a thin area (77, 87) surrounding the at least one rigid island (73, 83), having a thickness smaller than the rigid island thickness, that acts as a first stress concentrator; and a stress-sensitive circuit including at least one stress-sensitive component (76, 86, 88, 89) formed in the thin area (77, 87) of the elastic element (72, 82), the stress-sensitive circuit configured to output a signal proportional to the physical parameter, characterized in that the elastic element (72, 82) further comprises a second stress concentrator (75, 79, 85) at least partially formed in the thin area (77, 87) of the elastic element (72, 82) on the first side of the substrate,wherein the second stress concentrator (75, 79, 85) is configured to increase stress in the locations of the at least one stress-sensitive component (76, 86, 88, 89) resulting in an increase of the device sensitivity to the physical parameter. a sensor die (70, 80) comprising: a substrate made of a semiconductor material, the substrate having a first side, a second side substantially parallel to the first side opposite the first side, and a thickness defined by a distance from the first side to the second side; and a cavity formed on the second side of the sensor die (70, 80) creating an elastic element (72, 82) of the sensor die (70, 80) configured to bend in response to the physical parameter exerted on the sensor die (70, 80), the elastic element (72, 82) comprising: at least one rigid island (73, 83) formed within the cavity and having a thickness; a thin area (77, 87) surrounding the at least one rigid island (73, 83), having a thickness smaller than the rigid island thickness, that acts as a first stress concentrator; and a substrate made of a semiconductor material, the substrate having a first side, a second side substantially parallel to the first side opposite the first side, and a thickness defined by a distance from the first side to the second side; and a cavity formed on the second side of the sensor die (70, 80) creating an elastic element (72, 82) of the sensor die (70, 80) configured to bend in response to the physical parameter exerted on the sensor die (70, 80), the elastic element (72, 82) comprising: at least one rigid island (73, 83) formed within the cavity and having a thickness; a thin area (77, 87) surrounding the at least one rigid island (73, 83), having a thickness smaller than the rigid island thickness, that acts as a first stress concentrator; and at least one rigid island (73, 83) formed within the cavity and having a thickness; a thin area (77, 87) surrounding the at least one rigid island (73, 83), having a thickness smaller than the rigid island thickness, that acts as a first stress concentrator; and a stress-sensitive circuit including at least one stress-sensitive component (76, 86, 88, 89) formed in the thin area (77, 87) of the elastic element (72, 82), the stress-sensitive circuit configured to output a signal proportional to the physical parameter, characterized in that the elastic element (72, 82) further comprises a second stress concentrator (75, 79, 85) at least partially formed in the thin area (77, 87) of the elastic element (72, 82) on the first side of the substrate,wherein the second stress concentrator (75, 79, 85) is configured to increase stress in the locations of the at least one stress-sensitive component (76, 86, 88, 89) resulting in an increase of the device sensitivity to the physical parameter.