Method for producing a device with superimposed levels (N1, N2) of components including, in this order, the following steps: a) providing on a given level (N 1) provided with one or more components (T 11, T 12) produced at least partially in a first semiconductor layer: a stack including a second semiconductor layer capable of receiving at least one transistor channel (T 21) of level (N 2) above said given level (N 1), said stack including a so-called ground plane layer made of conductor or semiconductor material or doped semiconductor material situated between the first semiconductor layer and the second semiconductor layer as well as an insulator layer separating the ground plane layer from the second semiconductor layer, one or more islands being defined in the second semiconductor layer, b) forming a gate of a transistor (T 21) on at least one island among said one or more islands, c) defining by etching one or more distinct portions (34a, 34b) in the ground plane layer so as to free a space around at least one first etched portion of the ground plane layer arranged under and facing said island, d) forming an isolation zone around said island and said first portion by deposition of at least one layer made of insulator material covering the gate and said island, the layer of insulator material filling said space around said first portion of the ground plane layer, e) formation of conductive pads (66a, 66b, 66c, 86) traversing said layer made of insulator material, one or more of said conductive pads (66a, 66b) being connected with said island, at least one other conductive pad being connected with said first portion of the ground plane layer. a) providing on a given level (N 1) provided with one or more components (T 11, T 12) produced at least partially in a first semiconductor layer: a stack including a second semiconductor layer capable of receiving at least one transistor channel (T 21) of level (N 2) above said given level (N 1), said stack including a so-called ground plane layer made of conductor or semiconductor material or doped semiconductor material situated between the first semiconductor layer and the second semiconductor layer as well as an insulator layer separating the ground plane layer from the second semiconductor layer, one or more islands being defined in the second semiconductor layer, b) forming a gate of a transistor (T 21) on at least one island among said one or more islands, c) defining by etching one or more distinct portions (34a, 34b) in the ground plane layer so as to free a space around at least one first etched portion of the ground plane layer arranged under and facing said island, d) forming an isolation zone around said island and said first portion by deposition of at least one layer made of insulator material covering the gate and said island, the layer of insulator material filling said space around said first portion of the ground plane layer, e) formation of conductive pads (66a, 66b, 66c, 86) traversing said layer made of insulator material, one or more of said conductive pads (66a, 66b) being connected with said island, at least one other conductive pad being connected with said first portion of the ground plane layer.