A semiconductor structure (100, 200, 300B, 400B, 500), comprising: a plurality of semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503), comprising a first semiconductor region and a second semiconductor region, wherein one of the semiconductor regions is an N-type region and the other of the semiconductor regions is a P-type region; a light emitting region (102, 202, 302, 402, 502) disposed between the semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503); a first surface from which a substantial fraction of the light extracted from the semiconductor structure is emitted; a second surface opposite to the first surface; a first contact (109, 209, 309, 409, 509) electrically connected to one of the semiconductor regions, the first contact comprising: a metallic region (107, 207, 309, 313B, 409, 413B, 509); a first porous region (103A, 203A, 301A, 401A, 501A) disposed between the first contact and the light emitting region; and a second contact (109, 316, 416, 516) electrically connected to one of the semiconductor regions; wherein the first contact (109, 209, 309, 409, 509) and the second contact (109, 316, 416, 516) are connected to different semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503), wherein the light emitting region (102, 202, 302, 402, 502) is disposed between the first surface and the first porous region (103A, 203A, 301A, 401A, 501A), characterized in that, the first contact (109, 209, 309, 409, 509) is further comprising a first ITO region disposed between the first porous region (103A, 203A, 301A, 401A, 501A) and the metallic region (107, 207, 309, 313B, 409, 413B, 509) of the first contact (109, 209, 309, 409, 509). a plurality of semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503), comprising a first semiconductor region and a second semiconductor region, wherein one of the semiconductor regions is an N-type region and the other of the semiconductor regions is a P-type region; a light emitting region (102, 202, 302, 402, 502) disposed between the semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503); a first surface from which a substantial fraction of the light extracted from the semiconductor structure is emitted; a second surface opposite to the first surface; a first contact (109, 209, 309, 409, 509) electrically connected to one of the semiconductor regions, the first contact comprising: a metallic region (107, 207, 309, 313B, 409, 413B, 509); a first porous region (103A, 203A, 301A, 401A, 501A) disposed between the first contact and the light emitting region; and a second contact (109, 316, 416, 516) electrically connected to one of the semiconductor regions; a metallic region (107, 207, 309, 313B, 409, 413B, 509); a first porous region (103A, 203A, 301A, 401A, 501A) disposed between the first contact and the light emitting region; and a second contact (109, 316, 416, 516) electrically connected to one of the semiconductor regions; wherein the first contact (109, 209, 309, 409, 509) and the second contact (109, 316, 416, 516) are connected to different semiconductor regions (101, 103, 201, 203, 301, 303, 401, 403, 501, 503), wherein the light emitting region (102, 202, 302, 402, 502) is disposed between the first surface and the first porous region (103A, 203A, 301A, 401A, 501A), characterized in that, the first contact (109, 209, 309, 409, 509) is further comprising a first ITO region disposed between the first porous region (103A, 203A, 301A, 401A, 501A) and the metallic region (107, 207, 309, 313B, 409, 413B, 509) of the first contact (109, 209, 309, 409, 509).