A sensor chip comprising: a substrate; first supporting portions (111a, 111b, 111c, 111d); a second supporting portion around which the first supporting portions are disposed, the second supporting portion being disposed at a center of the substrate; first detecting beams (113a, 113d, 113g, 113j) each connecting the first supporting portions, which are mutually adjacent; second detecting beams (113b, 113e, 113h, 113k) disposed in parallel with the first detecting beams between the first detecting beams and the second supporting portion; third detecting beams (113c, 113f, 113i, 1131) connecting the first detecting beams (113a, 113d, 113g, 113j) and the second detecting beams (113b, 113e, 113h, 113k) in each set, in which one of the first detecting beams and the corresponding second detecting beam are arranged in parallel, force points (114a, 114b, 114c, 114d) disposed in the first detecting beams so as to be applied with force; and a plurality of strain detecting elements disposed a predetermined positions of the first detecting beams and the second detecting beams, wherein the plurality of strain detecting elements includes a first detecting portion having a first pair of strain detecting elements (FzR1, FzR4) disposed in a first one of the second detecting beams (113b, 113e, 113h, 113k) and a second pair of strain detecting elements (FzR2, FzR3) disposed in a second one of the second detecting beams (113b, 113e, 113h, 113k) different from the first one of the second detecting beams (113b, 113e, 113h, 113k), the first one and the second one of the second detecting beams (113b, 113e, 113h, 113k) being disposed in parallel to each other, the first pair of strain detecting elements (FzR1, FzR4) and the second pair of strain detecting elements (FzR2, FzR3) being respectively configured to detect force in a first direction and respectively disposed at positions symmetric relative to a line that bisects the second detecting beam (113e, 113k), the sensor chip further comprising a second detecting portion having a third pair of strain detecting elements (FzR1', RzR4') disposed on the second one of the second detecting beams (113b, 113e, 113h, 113k) and a fourth pair of strain detecting elements (FzR2', FzR3') disposed on the first one of the second detecting beams (113b, 113e, 113h, 113k) respectively configured to detect force in the first direction and respectively disposed at positions symmetric relative to the first and second pairs of strain detecting elements of the first detecting portion, wherein the substrate is a silicon on insulator, SOI, substrate; the first and second supporting portions are formed of an active layer, a BOX layer and a supporting layer of the SOI substrate; and the force points are formed from the BOX layer and the supporting layer of the SOI substrate. a substrate; first supporting portions (111a, 111b, 111c, 111d); a second supporting portion around which the first supporting portions are disposed, the second supporting portion being disposed at a center of the substrate; first detecting beams (113a, 113d, 113g, 113j) each connecting the first supporting portions, which are mutually adjacent; second detecting beams (113b, 113e, 113h, 113k) disposed in parallel with the first detecting beams between the first detecting beams and the second supporting portion; third detecting beams (113c, 113f, 113i, 1131) connecting the first detecting beams (113a, 113d, 113g, 113j) and the second detecting beams (113b, 113e, 113h, 113k) in each set, in which one of the first detecting beams and the corresponding second detecting beam are arranged in parallel, force points (114a, 114b, 114c, 114d) disposed in the first detecting beams so as to be applied with force; and a plurality of strain detecting elements disposed a predetermined positions of the first detecting beams and the second detecting beams, wherein the plurality of strain detecting elements includes a first detecting portion having a first pair of strain detecting elements (FzR1, FzR4) disposed in a first one of the second detecting beams (113b, 113e, 113h, 113k) and a second pair of strain detecting elements (FzR2, FzR3) disposed in a second one of the second detecting beams (113b, 113e, 113h, 113k) different from the first one of the second detecting beams (113b, 113e, 113h, 113k), the first one and the second one of the second detecting beams (113b, 113e, 113h, 113k) being disposed in parallel to each other, the first pair of strain detecting elements (FzR1, FzR4) and the second pair of strain detecting elements (FzR2, FzR3) being respectively configured to detect force in a first direction and respectively disposed at positions symmetric relative to a line that bisects the second detecting beam (113e, 113k), the sensor chip further comprising a second detecting portion having a third pair of strain detecting elements (FzR1', RzR4') disposed on the second one of the second detecting beams (113b, 113e, 113h, 113k) and a fourth pair of strain detecting elements (FzR2', FzR3') disposed on the first one of the second detecting beams (113b, 113e, 113h, 113k) respectively configured to detect force in the first direction and respectively disposed at positions symmetric relative to the first and second pairs of strain detecting elements of the first detecting portion, wherein the substrate is a silicon on insulator, SOI, substrate; the first and second supporting portions are formed of an active layer, a BOX layer and a supporting layer of the SOI substrate; and the force points are formed from the BOX layer and the supporting layer of the SOI substrate.