A method comprising: growing a III-nitride structure on a substrate, the III-nitride structure comprising: - a template comprising: a first layer grown directly on the substrate, the first layer being a non-single crystal GaN layer having a thickness less than 500 angstroms, grown at a temperature between 400°C and 750°C; a first substantially single crystal layer grown over the first layer, the first substantially single crystal layer being a GaN or AlInGaN layer having a thickness greater than 500 angstroms, grown at a temperature between 900°C and 1150°C; a second layer grown over the first substantially single crystal layer, wherein the second layer is a non-single crystal InGaN layer having a thickness less than 500 angstroms and an InN composition greater than 0 and less than 20%, grown at a temperature between 400°C and 750°C; a second substantially single crystal layer grown over the second layer, the second substantially single crystal layer being a InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition between 0.5% and 20%, grown at a temperature between 800°C and 1000°C; a third substantially single crystal layer disposed between the first substantially single crystal layer and the second layer, the third substantially single crystal layer being an InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition less than 5%, grown at a temperature between 900°C and 1000°C; and - device layers grown over the template, the device layers comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. - a template comprising: a first layer grown directly on the substrate, the first layer being a non-single crystal GaN layer having a thickness less than 500 angstroms, grown at a temperature between 400°C and 750°C; a first substantially single crystal layer grown over the first layer, the first substantially single crystal layer being a GaN or AlInGaN layer having a thickness greater than 500 angstroms, grown at a temperature between 900°C and 1150°C; a second layer grown over the first substantially single crystal layer, wherein the second layer is a non-single crystal InGaN layer having a thickness less than 500 angstroms and an InN composition greater than 0 and less than 20%, grown at a temperature between 400°C and 750°C; a second substantially single crystal layer grown over the second layer, the second substantially single crystal layer being a InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition between 0.5% and 20%, grown at a temperature between 800°C and 1000°C; a third substantially single crystal layer disposed between the first substantially single crystal layer and the second layer, the third substantially single crystal layer being an InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition less than 5%, grown at a temperature between 900°C and 1000°C; and a first layer grown directly on the substrate, the first layer being a non-single crystal GaN layer having a thickness less than 500 angstroms, grown at a temperature between 400°C and 750°C; a first substantially single crystal layer grown over the first layer, the first substantially single crystal layer being a GaN or AlInGaN layer having a thickness greater than 500 angstroms, grown at a temperature between 900°C and 1150°C; a second layer grown over the first substantially single crystal layer, wherein the second layer is a non-single crystal InGaN layer having a thickness less than 500 angstroms and an InN composition greater than 0 and less than 20%, grown at a temperature between 400°C and 750°C; a second substantially single crystal layer grown over the second layer, the second substantially single crystal layer being a InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition between 0.5% and 20%, grown at a temperature between 800°C and 1000°C; a third substantially single crystal layer disposed between the first substantially single crystal layer and the second layer, the third substantially single crystal layer being an InGaN layer having a thickness between 500 and 10,000 angstroms and an InN composition less than 5%, grown at a temperature between 900°C and 1000°C; and - device layers grown over the template, the device layers comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.