An encapsulating method, comprising: forming an inorganic film covering a structure to be encapsulated, wherein the inorganic film layer comprises at least two sub-film layers (0311, 0312, 0313, 031n); and among the at least two sub-film layers, densification of a sub-film layer farther away from the structure to be encapsulated is greater than densification of a sub-film layer closer to the structure to be encapsulated; characterized in that the forming the inorganic film layer covering the structure to be encapsulated comprises: forming each of the at least two sub-film layers sequentially on the structure to be encapsulated using a plasma mixture, to make an amount of a gas in the plasma mixture forming the sub-film layer farther away from the structure to be encapsulated to be greater than an amount of the gas in the plasma mixture forming the sub-film layer closer to the structure to be encapsulated, to form the inorganic film layer; the amount of the gas in the plasma mixture forming each of the at least two sub-film layers increases at the gradient 5%*A in accordance with the sequence of formation of the at least two sub-film layers, wherein A is an amount of the gas in the plasma mixture forming a sub-film layer closest to the structure to be encapsulated among the at least two sub-film layers. forming an inorganic film covering a structure to be encapsulated, wherein the inorganic film layer comprises at least two sub-film layers (0311, 0312, 0313, 031n); and among the at least two sub-film layers, densification of a sub-film layer farther away from the structure to be encapsulated is greater than densification of a sub-film layer closer to the structure to be encapsulated; characterized in that the forming the inorganic film layer covering the structure to be encapsulated comprises: forming each of the at least two sub-film layers sequentially on the structure to be encapsulated using a plasma mixture, to make an amount of a gas in the plasma mixture forming the sub-film layer farther away from the structure to be encapsulated to be greater than an amount of the gas in the plasma mixture forming the sub-film layer closer to the structure to be encapsulated, to form the inorganic film layer; the amount of the gas in the plasma mixture forming each of the at least two sub-film layers increases at the gradient 5%*A in accordance with the sequence of formation of the at least two sub-film layers, wherein A is an amount of the gas in the plasma mixture forming a sub-film layer closest to the structure to be encapsulated among the at least two sub-film layers. forming each of the at least two sub-film layers sequentially on the structure to be encapsulated using a plasma mixture, to make an amount of a gas in the plasma mixture forming the sub-film layer farther away from the structure to be encapsulated to be greater than an amount of the gas in the plasma mixture forming the sub-film layer closer to the structure to be encapsulated, to form the inorganic film layer; the amount of the gas in the plasma mixture forming each of the at least two sub-film layers increases at the gradient 5%*A in accordance with the sequence of formation of the at least two sub-film layers, wherein A is an amount of the gas in the plasma mixture forming a sub-film layer closest to the structure to be encapsulated among the at least two sub-film layers.