A method for forming a via hole self-aligned with a metal block on a substrate, the substrate comprising an interlayer dielectric layer, the method comprising: forming a metal comprising layer on the interlayer dielectric layer, forming a dielectric layer on the metal comprising layer, forming a plurality of parallel spacer line structures on the dielectric layer, the parallel spacer line structures extending along an upper surface of the dielectric layer, forming a sidewall oxide layer on respective sidewalls of the plurality of parallel spacer line structures such that a portion of the dielectric layer is exposed between adjacent sidewall oxide layers of the parallel spacer line structures, forming a first sacrificial layer covering exposed portions of the dielectric layer and enclosing the parallel spacer line structures, forming an opening in the first sacrificial layer to expose a first portion of the dielectric layer between adjacent sidewall oxide layers of the parallel spacer line structures, etching, via the opening in the first sacrificial layer, through the first portion of the dielectric layer, thereby forming an opening (O') in the dielectric layer, exposing a first portion (P') of the metal comprising layer, removing the first sacrificial layer, forming a second sacrificial layer covering the dielectric layer, the first portion (P') of the metal comprising layer and enclosing the parallel spacer line structures, forming an opening (O") in the second sacrificial layer, the opening (O") partially overlapping the opening (O') of the dielectric layer and exposing a second portion (P") of the metal comprising layer, the second portion (P") of the metal comprising layer corresponding to a portion of the first portion (P') of the metal comprising layer, selectively depositing a metal block on the exposed second portion (P") of the metal comprising layer, removing the second sacrificial layer, thereby exposing a remaining portion of the first portion (P') of the metal comprising layer in the opening of the dielectric layer, and etching, via the opening of the dielectric layer, through the remaining portion of the first portion (P') of the metal comprising layer and the interlayer dielectric layer, thereby forming a via hole self-aligned with the metal block. forming a metal comprising layer on the interlayer dielectric layer, forming a dielectric layer on the metal comprising layer, forming a plurality of parallel spacer line structures on the dielectric layer, the parallel spacer line structures extending along an upper surface of the dielectric layer, forming a sidewall oxide layer on respective sidewalls of the plurality of parallel spacer line structures such that a portion of the dielectric layer is exposed between adjacent sidewall oxide layers of the parallel spacer line structures, forming a first sacrificial layer covering exposed portions of the dielectric layer and enclosing the parallel spacer line structures, forming an opening in the first sacrificial layer to expose a first portion of the dielectric layer between adjacent sidewall oxide layers of the parallel spacer line structures, etching, via the opening in the first sacrificial layer, through the first portion of the dielectric layer, thereby forming an opening (O') in the dielectric layer, exposing a first portion (P') of the metal comprising layer, removing the first sacrificial layer, forming a second sacrificial layer covering the dielectric layer, the first portion (P') of the metal comprising layer and enclosing the parallel spacer line structures, forming an opening (O") in the second sacrificial layer, the opening (O") partially overlapping the opening (O') of the dielectric layer and exposing a second portion (P") of the metal comprising layer, the second portion (P") of the metal comprising layer corresponding to a portion of the first portion (P') of the metal comprising layer, selectively depositing a metal block on the exposed second portion (P") of the metal comprising layer, removing the second sacrificial layer, thereby exposing a remaining portion of the first portion (P') of the metal comprising layer in the opening of the dielectric layer, and etching, via the opening of the dielectric layer, through the remaining portion of the first portion (P') of the metal comprising layer and the interlayer dielectric layer, thereby forming a via hole self-aligned with the metal block.