A power module, comprising: a first power semiconductor element (328, 156) constituting an upper arm of an inverter circuit; a second power semiconductor element (330, 166) constituting a lower arm of the inverter circuit; a first conductor plate and a second conductor plate between which the first power semiconductor element (328, 156) is arranged, a first electrode of the first power semiconductor element (328, 156) being fixed to the first conductor plate, a second electrode of the first power semiconductor element (328, 156) being fixed to the second conductor plate; a third conductor plate and a fourth conductor plate between which the second power semiconductor element (330, 166) is arranged, a first electrode of the second power semiconductor element (330, 166) being fixed to the third conductor plate, a second electrode of the second power semiconductor element (330, 166) being fixed to the conductor plate; a sealing resin member sealing the first power semiconductor element (328, 156), the second semiconductor element (330, 166), the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate; and a DC positive terminal and a DC negative terminal protruding from the sealing resin member, characterized in that the DC negative terminal is arranged in the same plane and formed integrally with the DC positive terminal through a tie bar that is cut after having formed the resin member, the DC negative terminal is formed separately from the fourth conductor plate and connected with the fourth conductor plate via a metal bonding material, and the DC positive terminal and the DC negative terminal are aligned along one surface of the sealing resin member. a first power semiconductor element (328, 156) constituting an upper arm of an inverter circuit; a second power semiconductor element (330, 166) constituting a lower arm of the inverter circuit; a first conductor plate and a second conductor plate between which the first power semiconductor element (328, 156) is arranged, a first electrode of the first power semiconductor element (328, 156) being fixed to the first conductor plate, a second electrode of the first power semiconductor element (328, 156) being fixed to the second conductor plate; a third conductor plate and a fourth conductor plate between which the second power semiconductor element (330, 166) is arranged, a first electrode of the second power semiconductor element (330, 166) being fixed to the third conductor plate, a second electrode of the second power semiconductor element (330, 166) being fixed to the conductor plate; a sealing resin member sealing the first power semiconductor element (328, 156), the second semiconductor element (330, 166), the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate; and a DC positive terminal and a DC negative terminal protruding from the sealing resin member, characterized in that the DC negative terminal is arranged in the same plane and formed integrally with the DC positive terminal through a tie bar that is cut after having formed the resin member, the DC negative terminal is formed separately from the fourth conductor plate and connected with the fourth conductor plate via a metal bonding material, and the DC positive terminal and the DC negative terminal are aligned along one surface of the sealing resin member.