A method of manufacturing a solar cell, the method comprising: preparing a monocrystalline silicon substrate having a first surface and a second surface different from the first surface, wherein the monocrystalline silicon substrate is divided into a plurality of cell portions including a first cell portion and a second cell portion, wherein a scribing portion is positioned between the first cell portion and the second cell portion; disposing a mask having a line portion corresponding to the scribing portion on the first surface of the monocrystalline silicon substrate; forming a first passivation layer on the first surface of the monocrystalline silicon substrate before disposing the mask or after disposing the mask on the first surface of the monocrystalline silicon substrate and on the mask; forming a first amorphous conductive silicon layer on the first passivation layer and the mask on the first surface of the monocrystalline silicon substrate; forming a second amorphous conductive silicon layer entirely on a second passivation layer on the second surface of the monocrystalline silicon substrate; forming a first transparent electrode layer on the first amorphous conductive silicon layer and a first metal electrode layer on the first transparent electrode layer without forming the first metal electrode layer on the scribing portion of the monocrystalline silicon substrate, and a second transparent electrode layer on the second amorphous conductive silicon layer and a second metal electrode layer on the second transparent electrode layer, entirely removing the mask from the first surface of the monocrystalline silicon substrate to remove a portion of the first amorphous conductive silicon layer, the first transparent electrode layer and optionally the first passivation layer that are disposed on the mask to form a portion where the first amorphous conductive silicon layer is not disposed; and irradiating a laser along the scribing portion where the first amorphous conductive silicon layer, the first transparent electrode layer and the first passivation layer on the mask are not disposed at the first surface to divide the monocrystalline silicon substrate to form solar cells corresponding to each of the plurality of cell portions, respectively, after the removing of the mask, wherein each solar cell of the solar cells has a first edge area, a second edge area, and a cell area between the first edge area and the second edge area, and wherein the first amorphous conductive silicon layer is not disposed on the first edge area at the first surface of the monocrystalline silicon substrate of the solar cell. preparing a monocrystalline silicon substrate having a first surface and a second surface different from the first surface, wherein the monocrystalline silicon substrate is divided into a plurality of cell portions including a first cell portion and a second cell portion, wherein a scribing portion is positioned between the first cell portion and the second cell portion; disposing a mask having a line portion corresponding to the scribing portion on the first surface of the monocrystalline silicon substrate; forming a first passivation layer on the first surface of the monocrystalline silicon substrate before disposing the mask or after disposing the mask on the first surface of the monocrystalline silicon substrate and on the mask; forming a first amorphous conductive silicon layer on the first passivation layer and the mask on the first surface of the monocrystalline silicon substrate; forming a second amorphous conductive silicon layer entirely on a second passivation layer on the second surface of the monocrystalline silicon substrate; forming a first transparent electrode layer on the first amorphous conductive silicon layer and a first metal electrode layer on the first transparent electrode layer without forming the first metal electrode layer on the scribing portion of the monocrystalline silicon substrate, and a second transparent electrode layer on the second amorphous conductive silicon layer and a second metal electrode layer on the second transparent electrode layer, entirely removing the mask from the first surface of the monocrystalline silicon substrate to remove a portion of the first amorphous conductive silicon layer, the first transparent electrode layer and optionally the first passivation layer that are disposed on the mask to form a portion where the first amorphous conductive silicon layer is not disposed; and irradiating a laser along the scribing portion where the first amorphous conductive silicon layer, the first transparent electrode layer and the first passivation layer on the mask are not disposed at the first surface to divide the monocrystalline silicon substrate to form solar cells corresponding to each of the plurality of cell portions, respectively, after the removing of the mask, wherein each solar cell of the solar cells has a first edge area, a second edge area, and a cell area between the first edge area and the second edge area, and wherein the first amorphous conductive silicon layer is not disposed on the first edge area at the first surface of the monocrystalline silicon substrate of the solar cell.