Method for detaching a III-V semiconductor layer epitaxially grown on a semiconductor wafer, wherein the semiconductor wafer has at least a diameter of 100 mm, - the semiconductor layer is formed as a substrate and comprises a III-V material or a group IV material or consists of a III-V material or group IV material, - the semiconductor wafer has an upper side and a lower side, - a buffer layer is formed on the upper side, - a sacrificial layer is formed on the upper side of the buffer layer, - the semiconductor layer is arranged for a construction of components above the sacrificial layer, wherein the semiconductor layer has a thickness above 0.5 μm, - the aforesaid layers each comprise a III-V material or consist of a III-V material, - a carrier layer is formed above the semiconductor layer, wherein the carrier layer and the semiconductor layer comprise different materials and the carrier layer has a thickness above 10 μm, - the sacrificial layer has a wet-chemical etching rate higher by comparison with the semiconductor layer by at least a factor of 10, - the sacrificial layer and the buffer layer and the semiconductor layer and the carrier layer are each formed over the whole area or are each formed over the whole area in a central region of the semiconductor wafer, wherein the central region has at least a radius of 40 mm, characterised in that - in a process step the semiconductor wafer is introduced into a mounting device, - in a process step position data of points arranged on the upper side of the semiconductor wafer are read out of a memory device and the points are arranged along a line, - in a process step a laser moves to the points predetermined on the basis of the position data and holes with a base are produced at at least a part of the points by means of the laser through the carrier layer and the layers formed underneath the carrier layer, wherein the laser is controlled in such a way that the base of the respective hole is formed within the buffer layer, - with the carrier layer support an etching solution is introduced into the holes in a wet-chemical process step so as to at least partly remove the sacrificial layer and detach the semiconductor layer, - the listed process steps are performed in the indicated sequence. - the semiconductor layer is formed as a substrate and comprises a III-V material or a group IV material or consists of a III-V material or group IV material, - the semiconductor wafer has an upper side and a lower side, - a buffer layer is formed on the upper side, - a sacrificial layer is formed on the upper side of the buffer layer, - the semiconductor layer is arranged for a construction of components above the sacrificial layer, wherein the semiconductor layer has a thickness above 0.5 μm, - the aforesaid layers each comprise a III-V material or consist of a III-V material, - a carrier layer is formed above the semiconductor layer, wherein the carrier layer and the semiconductor layer comprise different materials and the carrier layer has a thickness above 10 μm, - the sacrificial layer has a wet-chemical etching rate higher by comparison with the semiconductor layer by at least a factor of 10, - the sacrificial layer and the buffer layer and the semiconductor layer and the carrier layer are each formed over the whole area or are each formed over the whole area in a central region of the semiconductor wafer, wherein the central region has at least a radius of 40 mm, - in a process step the semiconductor wafer is introduced into a mounting device, - in a process step position data of points arranged on the upper side of the semiconductor wafer are read out of a memory device and the points are arranged along a line, - in a process step a laser moves to the points predetermined on the basis of the position data and holes with a base are produced at at least a part of the points by means of the laser through the carrier layer and the layers formed underneath the carrier layer, wherein the laser is controlled in such a way that the base of the respective hole is formed within the buffer layer, - with the carrier layer support an etching solution is introduced into the holes in a wet-chemical process step so as to at least partly remove the sacrificial layer and detach the semiconductor layer, - the listed process steps are performed in the indicated sequence.