An electrically adjustable electrical memory effect resistor comprising: • a stack comprising: - a first layer of a first superconductive material having a first underdoped state with a first critical temperature and a second overdoped state with a second critical temperature, the second critical temperature being higher than the first critical temperature, the first layer of superconductive material extending along an axis x; - a second layer of a second ferroelectric material that is polarised or has a component of its polarisation in a direction parallel to the direction of the stack, the state of the first material depending on the polarisation direction of the second material; and - a third layer of a third conductive material; • a means for controlling the electric voltage between the first layer of superconductive material and the third layer of conductive material, generating an electric field allowing the polarisation direction of the second ferroelectric material to be modified when the electric control voltage is higher than a threshold voltage value (Us), the second ferroelectric material maintaining the polarisation direction that is defined by the application of the electric voltage after the application of the electric voltage has stopped, characterised in that the stack further comprises a fourth layer comprising at least one fourth electrically insulating material, the fourth layer being disposed between the second layer of ferroelectric material and the third layer of conductive material, the thickness of the fourth electrically insulating layer varying in a direction parallel to the axis x and/or the fourth layer comprises a succession of materials with a different dielectric constant in a direction parallel to the axis x, so as to vary the electric field applied between the first layer and the third layer, the adjustable resistor being configured to operate over a temperature interval, in which the difference in electric resistance between the overdoped state and the underdoped state of the first material is non-zero. • a stack comprising: - a first layer of a first superconductive material having a first underdoped state with a first critical temperature and a second overdoped state with a second critical temperature, the second critical temperature being higher than the first critical temperature, the first layer of superconductive material extending along an axis x; - a second layer of a second ferroelectric material that is polarised or has a component of its polarisation in a direction parallel to the direction of the stack, the state of the first material depending on the polarisation direction of the second material; and - a third layer of a third conductive material; - a first layer of a first superconductive material having a first underdoped state with a first critical temperature and a second overdoped state with a second critical temperature, the second critical temperature being higher than the first critical temperature, the first layer of superconductive material extending along an axis x; - a second layer of a second ferroelectric material that is polarised or has a component of its polarisation in a direction parallel to the direction of the stack, the state of the first material depending on the polarisation direction of the second material; and - a third layer of a third conductive material; • a means for controlling the electric voltage between the first layer of superconductive material and the third layer of conductive material, generating an electric field allowing the polarisation direction of the second ferroelectric material to be modified when the electric control voltage is higher than a threshold voltage value (Us),