Transistor, comprising: at least a first and an adjacent second transistor cell, each of them comprising: a contact field (305, 306, 405, 406) comprising at least one bump (105, 208, 307, 407) which can be conductively connected to a printed circuit board, a control electrode (303, 403) which is the result of a network of metallizations concentric and radial with respect to the contact field; a plurality of source fields (301, 401); and a plurality of drain fields (302, 402), wherein the source fields (301, 401) and the drain fields (302, 402) are arranged concentrically around the contact field (305, 306, 405, 406) in an alternating sequence and separated from each other by the control electrode, wherein the control electrode (303, 403) completely encloses at least one of the source fields (201, 301, 401) and at least one of the drain fields (202, 302, 402), wherein the source fields (301, 401) of the first and the second transistor cell are conductively connected to the contact field (305, 405) of the first transistor cell, and the drain fields (302, 402) of the first and the second transistor cell are conductively connected to the contact field (306, 406) of the second transistor cell. at least a first and an adjacent second transistor cell, each of them comprising: a contact field (305, 306, 405, 406) comprising at least one bump (105, 208, 307, 407) which can be conductively connected to a printed circuit board, a control electrode (303, 403) which is the result of a network of metallizations concentric and radial with respect to the contact field; a plurality of source fields (301, 401); and a plurality of drain fields (302, 402), wherein the source fields (301, 401) and the drain fields (302, 402) are arranged concentrically around the contact field (305, 306, 405, 406) in an alternating sequence and separated from each other by the control electrode, wherein the control electrode (303, 403) completely encloses at least one of the source fields (201, 301, 401) and at least one of the drain fields (202, 302, 402), wherein the source fields (301, 401) of the first and the second transistor cell are conductively connected to the contact field (305, 405) of the first transistor cell, and the drain fields (302, 402) of the first and the second transistor cell are conductively connected to the contact field (306, 406) of the second transistor cell. a contact field (305, 306, 405, 406) comprising at least one bump (105, 208, 307, 407) which can be conductively connected to a printed circuit board, a control electrode (303, 403) which is the result of a network of metallizations concentric and radial with respect to the contact field; a plurality of source fields (301, 401); and a plurality of drain fields (302, 402), wherein the source fields (301, 401) and the drain fields (302, 402) are arranged concentrically around the contact field (305, 306, 405, 406) in an alternating sequence and separated from each other by the control electrode, wherein the control electrode (303, 403) completely encloses at least one of the source fields (201, 301, 401) and at least one of the drain fields (202, 302, 402), wherein the source fields (301, 401) of the first and the second transistor cell are conductively connected to the contact field (305, 405) of the first transistor cell, and the drain fields (302, 402) of the first and the second transistor cell are conductively connected to the contact field (306, 406) of the second transistor cell.