A semiconductor device, comprising: a substrate; a first well region of a first conductivity type formed in the substrate, having a first depth; a drift region of a second conductivity type formed in the substrate adjacent to the first well region, wherein the drift region has a second depth of about 100 % of the first depth; a first source contact region of the second conductivity type formed in the first well region; a drain contact region of the second conductivity type formed in the drift region; a first gate electrode formed on the substrate between the first source contact region and the drain contact region, wherein the drain contact region is spaced apart from the first gate electrode, and the first source contact region is adjacent to the first gate electrode; a second well region of the first conductivity type formed in the substrate having the first depth and spaced apart from the first well region; a second source contact region of the second conductivity type formed in the second well region; a second gate electrode between the second source contact region and the drain contact region, wherein the second source contact region is adjacent to the second gate electrode, wherein the drift region is disposed between and adjacent to the first well region and the second well region, and the drain contact region is spaced apart from the second gate electrode; and wherein the drift region has a uniform doping concentration; and further comprising a first lightly doped region of the first conductivity type formed in the first well region, and a second lightly doped region of the first conductivity type formed in the second well region, wherein the first and second lightly doped regions are more heavily doped than the first and second well region, the first source contact region is formed in the first lightly doped region, and the second source contact region is formed in the second lightly doped region; and a first heavily doped region of the first conductivity type formed in the first lightly doped region, wherein the first heavily doped region is connected to the first source contact region, and a second heavily doped region of the first conductivity type formed in the second lightly doped region, wherein the second heavily doped region is connected to the second source contact region, wherein the first and second heavily doped regions (114A, 114B) are more heavily doped than the first and second lightly doped regions (108A, 108B). a substrate; a first well region of a first conductivity type formed in the substrate, having a first depth; a drift region of a second conductivity type formed in the substrate adjacent to the first well region, wherein the drift region has a second depth of about 100 % of the first depth; a first source contact region of the second conductivity type formed in the first well region; a drain contact region of the second conductivity type formed in the drift region; a first gate electrode formed on the substrate between the first source contact region and the drain contact region, wherein the drain contact region is spaced apart from the first gate electrode, and the first source contact region is adjacent to the first gate electrode; a second well region of the first conductivity type formed in the substrate having the first depth and spaced apart from the first well region; a second source contact region of the second conductivity type formed in the second well region; a second gate electrode between the second source contact region and the drain contact region, wherein the second source contact region is adjacent to the second gate electrode, wherein the drift region is disposed between and adjacent to the first well region and the second well region, and the drain contact region is spaced apart from the second gate electrode; and wherein the drift region has a uniform doping concentration; and further comprising a first lightly doped region of the first conductivity type formed in the first well region, and a second lightly doped region of the first conductivity type formed in the second well region, wherein the first and second lightly doped regions are more heavily doped than the first and second well region, the first source contact region is formed in the first lightly doped region, and the second source contact region is formed in the second lightly doped region; and a first heavily doped region of the first conductivity type formed in the first lightly doped region, wherein the first heavily doped region is connected to the first source contact region, and a second heavily doped region of the first conductivity type formed in the second lightly doped region, wherein the second heavily doped region is connected to the second source contact region, wherein the first and second heavily doped regions (114A, 114B) are more heavily doped than the first and second lightly doped regions (108A, 108B).