A method for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area, the method comprising: - providing a substrate including a substrate surface comprising at least one deposition area and at least one non-deposition area; - providing an atomic layer deposition device including a process gas injection head and a conveying system; - providing relative movement between the substrate and the process gas injection head, wherein the substrate surface is separated at a distance from the process gas injection head and the movement is in a direction along the substrate surface to form a conveying plane along which the substrate surface passes a plurality of deposition and separator spaces defined between the process gas injection head and the substrate surface; the plurality of deposition and separator spaces including at least: o a first deposition space provided with a precursor supply and a precursor drain o a second deposition space provided with a co-reactant supply and a co-reactant drain and o at least two separator gas spaces wherein each of the at least two separator gas spaces is provided with at least a separator gas inlet and a separator gas drain, wherein a first separator gas space of the at least two separator gas spaces is positioned adjacent to the first deposition space and wherein a second separator gas space is positioned adjacent to the first deposition space opposite the first separator gas space and adjacent to the second deposition space and wherein the process gas injection head is arranged to provide the first separator gas space with a combined separator-inhibitor gas flow comprising a separator gas of inert gas species and inhibitor moieties selectively adhering to the non-deposition area; - providing a precursor gas flow to the precursor supply - providing a co-reactant gas flow to the co-reactant supply; - providing the combined separator-inhibitor gas flow to the separator gas inlet of first gas separator space of the at least two separator spaces; and - providing a separator gas flow of inert gas species to the separator gas inlet of the second separator gas space and further separator gas spaces, in any, of the at least two separator spaces. - providing a substrate including a substrate surface comprising at least one deposition area and at least one non-deposition area; - providing an atomic layer deposition device including a process gas injection head and a conveying system; - providing relative movement between the substrate and the process gas injection head, wherein the substrate surface is separated at a distance from the process gas injection head and the movement is in a direction along the substrate surface to form a conveying plane along which the substrate surface passes a plurality of deposition and separator spaces defined between the process gas injection head and the substrate surface; the plurality of deposition and separator spaces including at least: o a first deposition space provided with a precursor supply and a precursor drain o a second deposition space provided with a co-reactant supply and a co-reactant drain and o at least two separator gas spaces wherein each of the at least two separator gas spaces is provided with at least a separator gas inlet and a separator gas drain, wherein a first separator gas space of the at least two separator gas spaces is positioned adjacent to the first deposition space and wherein a second separator gas space is positioned adjacent to the first deposition space opposite the first separator gas space and adjacent to the second deposition space and wherein the process gas injection head is arranged to provide the first separator gas space with a combined separator-inhibitor gas flow comprising a separator gas of inert gas species and inhibitor moieties selectively adhering to the non-deposition area; o a first deposition space provided with a precursor supply and a precursor drain o a second deposition space provided with a co-reactant supply and a co-reactant drain and o at least two separator gas spaces wherein each of the at least two separator gas spaces is provided with at least a separator gas inlet and a separator gas drain, - providing a precursor gas flow to the precursor supply - providing a co-reactant gas flow to the co-reactant supply; - providing the combined separator-inhibitor gas flow to the separator gas inlet of first gas separator space of the at least two separator spaces; and - providing a separator gas flow of inert gas species to the separator gas inlet of the second separator gas space and further separator gas spaces, in any, of the at least two separator spaces.