Power device comprising - at least two power semiconductor modules, - a carrier having a top side and an opposite bottom side, wherein - the power semiconductor modules are mounted on the carrier and are thermally connected to the carrier, - at least two power semiconductor modules are arranged in an overlapping configuration such that at least one power semiconductor module being mounted on the top side and at least one power semiconductor module being mounted on the bottom side at least partially overlap with each other when seen in plan view of the top side, wherein - the power semiconductor modules arranged in the overlapping configuration each comprise a functional region and an auxiliary region, - one or more power semiconductor chips are arranged in the functional region, wherein the auxiliary regions of the power semiconductor modules in the overlapping configuration overlap at least partially with each other in plan view of the top side and the functional regions are overlap-free with each other in this plan view, wherein - the power semiconductor modules each comprise a plurality of cooling elements at its respective backside, the cooling elements being arranged in the functional region, - the carrier comprises a least one top opening at the top side and at least one bottom opening at the bottom side, - the at least one top opening and the at least one bottom opening at most partially overlap with each other when seen in plan view of the top side, - the cooling elements of the power semiconductor modules project through the top opening and the bottom opening into the carrier, - the power semiconductor chips are arranged in a housing of the respective power semiconductor module, the housing being formed by an encapsulation, the one or more power semiconductor chips are embedded in the encapsulation, - the auxiliary region is free of power semiconductor chips, - in the auxiliary regions, a backside of the power semiconductor modules is formed by a substrate or a baseplate and a frontside of the power semiconductor modules is formed by the encapsulation - in the auxiliary regions, the power semiconductor modules are fixed to the carrier by fixing means, wherein screw holes are formed through the encapsulation. - at least two power semiconductor modules, - a carrier having a top side and an opposite bottom side, wherein - the power semiconductor modules are mounted on the carrier and are thermally connected to the carrier, - at least two power semiconductor modules are arranged in an overlapping configuration such that at least one power semiconductor module being mounted on the top side and at least one power semiconductor module being mounted on the bottom side at least partially overlap with each other when seen in plan view of the top side, wherein - the power semiconductor modules arranged in the overlapping configuration each comprise a functional region and an auxiliary region, - one or more power semiconductor chips are arranged in the functional region, wherein the auxiliary regions of the power semiconductor modules in the overlapping configuration overlap at least partially with each other in plan view of the top side and the functional regions are overlap-free with each other in this plan view, wherein - the power semiconductor modules each comprise a plurality of cooling elements at its respective backside, the cooling elements being arranged in the functional region, - the carrier comprises a least one top opening at the top side and at least one bottom opening at the bottom side, - the at least one top opening and the at least one bottom opening at most partially overlap with each other when seen in plan view of the top side, - the cooling elements of the power semiconductor modules project through the top opening and the bottom opening into the carrier, - the power semiconductor chips are arranged in a housing of the respective power semiconductor module, the housing being formed by an encapsulation, the one or more power semiconductor chips are embedded in the encapsulation, - the auxiliary region is free of power semiconductor chips, - in the auxiliary regions, a backside of the power semiconductor modules is formed by a substrate or a baseplate and a frontside of the power semiconductor modules is formed by the encapsulation - in the auxiliary regions, the power semiconductor modules are fixed to the carrier by fixing means, wherein screw holes are formed through the encapsulation.