A chip-scale packaging light emitting device comprising: a flip-chip light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; and a chip-scale packaging structure comprising: a soft buffer layer comprising a top portion and an edge portion, wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface, the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface, and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface; and an encapsulant structure disposed on the photoluminescent structure, wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer. a flip-chip light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; and a chip-scale packaging structure comprising: a soft buffer layer comprising a top portion and an edge portion, wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface, the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface, and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface; and an encapsulant structure disposed on the photoluminescent structure, wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer. a soft buffer layer comprising a top portion and an edge portion, wherein the top portion is disposed on the upper surface of the LED semiconductor die and comprises a convex surface, the edge portion is disposed covering the edge surface of the LED semiconductor die and comprises an extension surface, and the convex surface of the top portion of the soft buffer layer adjoins the extension surface of the edge portion of the soft buffer layer; a photoluminescent structure disposed on the soft buffer layer over the convex surface and the extension surface; and an encapsulant structure disposed on the photoluminescent structure, wherein the encapsulant structure is a planarization structure with a flat surface, and characterized in that a hardness of the encapsulant structure is higher than a hardness of the soft buffer layer.