Optoelectronic semiconductor body with a semiconductor layer sequence, which comprises an active layer suitable for generating electromagnetic radiation, and with a first electrical connection layer, wherein - the semiconductor body is provided for emitting electromagnetic radiation from a front side, - the semiconductor layer sequence comprises an opening, which completely penetrates the semiconductor layer sequence in the direction from the front side to a rear side located opposite the front side, - the first electrical connection layer is arranged on the rear side of the semiconductor body, - a section of the first electrical connection layer extends from the rear side through the opening to the front side and covers a first partial region of a front-side main face of the semiconductor layer sequence, - the first electrical connection layer is formed so as to be permeable to light at least in places, and - a second partial region of the front-side main face is not covered by the first electrical connection layer, and the section (40, 40A) of the first electrical connection layer comprises a transparent conductive oxide or consists thereof, characterized in that - the semiconductor body comprises a depression, which laterally overlaps the opening and extends into the semiconductor layer sequence from the front side in the direction towards the rear side, - the first electrical connection layer delimits the depression laterally and/or in the direction towards the rear side, - the first partial region of the front-side main face of the semiconductor layer sequence, which is covered by the first electrical connection layer (4, 40), surrounds the opening in the manner of a ring, and alternatively or additionally a quotient of the surface area of a front-side contact surface and the total surface area of the front-side main face has a value of greater than or equal to 0.05 and less than or equal to 0.15, wherein the surface area of the front-side contact surface is equal to the difference between the total surface area and the surface area of the second partial region. - the semiconductor body is provided for emitting electromagnetic radiation from a front side, - the semiconductor layer sequence comprises an opening, which completely penetrates the semiconductor layer sequence in the direction from the front side to a rear side located opposite the front side, - the first electrical connection layer is arranged on the rear side of the semiconductor body, - a section of the first electrical connection layer extends from the rear side through the opening to the front side and covers a first partial region of a front-side main face of the semiconductor layer sequence, - the first electrical connection layer is formed so as to be permeable to light at least in places, and - a second partial region of the front-side main face is not covered by the first electrical connection layer, and the section (40, 40A) of the first electrical connection layer comprises a transparent conductive oxide or consists thereof, - the semiconductor body comprises a depression, which laterally overlaps the opening and extends into the semiconductor layer sequence from the front side in the direction towards the rear side, - the first electrical connection layer delimits the depression laterally and/or in the direction towards the rear side, - the first partial region of the front-side main face of the semiconductor layer sequence, which is covered by the first electrical connection layer (4, 40), surrounds the opening in the manner of a ring, and alternatively or additionally a quotient of the surface area of a front-side contact surface and the total surface area of the front-side main face has a value of greater than or equal to 0.05 and less than or equal to 0.15, wherein the surface area of the front-side contact surface is equal to the difference between the total surface area and the surface area of the second partial region.