A semiconductor die package comprising: • a substrate formed of a mold material, wherein embedded side by side in said mold material are a first semiconductor die and a Through Substrate Via insert, the substrate, the TSV insert and the first die having a front side and a back side, and wherein • the TSV insert comprises N contacts on the front side of the insert, N contacts on the backside of the insert and N metal-filled vias individually interconnecting said contacts (12,11) on the front and back sides of the insert, N being an integer higher than or equal to 1, • the first die comprises N contacts on the front side of the first die, • the first die further comprises one or more contact terminals (6,35) on the front side of the first die, • a second semiconductor die mounted on the back side of the substrate, the second semiconductor die comprising N contacts which are individually connected to the N contacts of the TSV insert on the back side of the insert, • a lateral connecting device provided with a first and second group (19,20) of N contacts each, the groups being placed side by side on the same surface of the lateral connecting device, wherein the first and second group (19,20) of N contacts are individually interconnected inside the lateral connecting device, and wherein the first and second groups (19,20) of N contacts on the lateral connecting device are individually connected respectively to the N contacts on the first die and to the N contacts of the TSV insert on the front side of the insert, so that the N contacts on the first die are individually connected to the N contacts on the second die, through the lateral connecting device and the TSV insert, • a plurality of package level contact bumps electrically connected to at least some of the contact terminals on the first die. wherein the package further comprises a redistribution layer on the front side of the substrate, and wherein the package level contact bumps are mounted on the outer surface of said RDL and connected to the contact terminals of the first die through conductors within the RDL, and wherein the lateral connecting device is equally mounted on the outer surface of the RDL. • a substrate formed of a mold material, wherein embedded side by side in said mold material are a first semiconductor die and a Through Substrate Via insert, the substrate, the TSV insert and the first die having a front side and a back side, and wherein • the TSV insert comprises N contacts on the front side of the insert, N contacts on the backside of the insert and N metal-filled vias individually interconnecting said contacts (12,11) on the front and back sides of the insert, N being an integer higher than or equal to 1, • the first die comprises N contacts on the front side of the first die, • the first die further comprises one or more contact terminals (6,35) on the front side of the first die, • the TSV insert comprises N contacts on the front side of the insert, N contacts on the backside of the insert and N metal-filled vias individually interconnecting said contacts (12,11) on the front and back sides of the insert, N being an integer higher than or equal to 1, • the first die comprises N contacts on the front side of the first die, • the first die further comprises one or more contact terminals (6,35) on the front side of the first die, • a second semiconductor die mounted on the back side of the substrate, the second semiconductor die comprising N contacts which are individually connected to the N contacts of the TSV insert on the back side of the insert, • a lateral connecting device provided with a first and second group (19,20) of N contacts each, the groups being placed side by side on the same surface of the lateral connecting device, wherein the first and second group (19,20) of N contacts are individually interconnected inside the lateral connecting device, and wherein the first and second groups (19,20) of N contacts on the lateral connecting device are individually connected respectively to the N contacts on the first die and to the N contacts of the TSV insert on the front side of the insert, so that the N contacts on the first die are individually connected to the N contacts on the second die, through the lateral connecting device and the TSV insert, • a plurality of package level contact bumps electrically connected to at least some of the contact terminals on the first die.