A production method for silicon wafers, comprising: a step for slicing a silicon wafer from an ingot composed of perfect area where no agglomerate of interstitial type point defects and no agglomerate of vacancy type point defects exist; a step for thinning or stripping an oxide film on a surface of the silicon wafer in case where the thickness of the oxide film is 2 nm or more, wherein the oxide film is thinned so as to be less than 2 nm thick; a first thermal annealing step for thermal-annealing the silicon wafer in an atmosphere to nitride the surfaces of the silicon wafer; thereby, forming vacancies therein; and, after the first thermal annealing step, a second thermal annealing step, wherein a non-defect layer is formed in a surface layer of the silicon wafer at lower temperature than that in the first thermal annealing step and at the same time oxygen atoms are precipitated by utilizing the vacancies in the silicon wafer, wherein the step for thinning or stripping an oxide film is performed before the first thermal annealing step, the atmosphere used in the first thermal annealing step comprises a nitride gas comprising NH 3 having a lower decomposition temperature than a decomposable temperature of N 2, the NH 3 in the nitride gas is 0.5% or more in concentration, or 10 sccm or more in flow rate, the temperature in the first thermal annealing step is 900°C to 1200°C and the time in the first thermal annealing step is 60 seconds or less, and the first thermal annealing step comprises: providing the silicon wafer in a reaction chamber for the thermal annealing; carrying out a purging treatment for removing oxygen contained in an atmosphere in the reaction chamber; and supplying the atmosphere containing the nitride gas into the reaction chamber. a step for slicing a silicon wafer from an ingot composed of perfect area where no agglomerate of interstitial type point defects and no agglomerate of vacancy type point defects exist; a step for thinning or stripping an oxide film on a surface of the silicon wafer in case where the thickness of the oxide film is 2 nm or more, wherein the oxide film is thinned so as to be less than 2 nm thick; a first thermal annealing step for thermal-annealing the silicon wafer in an atmosphere to nitride the surfaces of the silicon wafer; thereby, forming vacancies therein; and, after the first thermal annealing step, a second thermal annealing step, wherein a non-defect layer is formed in a surface layer of the silicon wafer at lower temperature than that in the first thermal annealing step and at the same time oxygen atoms are precipitated by utilizing the vacancies in the silicon wafer, wherein the step for thinning or stripping an oxide film is performed before the first thermal annealing step, the atmosphere used in the first thermal annealing step comprises a nitride gas comprising NH 3 having a lower decomposition temperature than a decomposable temperature of N 2, the NH 3 in the nitride gas is 0.5% or more in concentration, or 10 sccm or more in flow rate, the temperature in the first thermal annealing step is 900°C to 1200°C and the time in the first thermal annealing step is 60 seconds or less, and the first thermal annealing step comprises: providing the silicon wafer in a reaction chamber for the thermal annealing; carrying out a purging treatment for removing oxygen contained in an atmosphere in the reaction chamber; and supplying the atmosphere containing the nitride gas into the reaction chamber. providing the silicon wafer in a reaction chamber for the thermal annealing; carrying out a purging treatment for removing oxygen contained in an atmosphere in the reaction chamber; and supplying the atmosphere containing the nitride gas into the reaction chamber.