An electronic device, comprising: a power supply configured to supply a first power and a second power; a first solid state drive backplane (140; 200; 300) and a second solid state drive backplane (150; 200; 300) configured to receive the first power from the power supply, each of the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300) including two or more solid state drives; and a baseboard configured to receive the second power from the power supply, to independently power on and power off the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300), and to access the solid state drives of a solid state drive backplane that is in a power-on state from among the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300), wherein each of the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300) includes: a bi-metal (221, 222, 223, 224; 321, 322) disposed adjacent to the solid state drives and configured to activate a signal in response to an increase in temperature; and a regulator (231, 232, 233, 234; 331, 332) configured to receive the first power from the power supply, and to power on (S140; S240) or power off (S120; S220) the solid state drives under control of the baseboard, wherein the regulator (231, 232, 233, 234; 331, 332) is configured to change (S140; S240; S340) a power-off state of at least one solid state drive adjacent to the bi-metal (221, 222, 223, 224; 321, 322) to a power-on state in response to the bi-metal (221, 222, 223, 224; 321, 322) activating the signal, and wherein the at least one solid state drive that is powered on is configured to perform (S160; S250; S370) a retention recovery operation. a power supply configured to supply a first power and a second power; a first solid state drive backplane (140; 200; 300) and a second solid state drive backplane (150; 200; 300) configured to receive the first power from the power supply, each of the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300) including two or more solid state drives; and a baseboard configured to receive the second power from the power supply, to independently power on and power off the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300), and to access the solid state drives of a solid state drive backplane that is in a power-on state from among the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300), wherein each of the first solid state drive backplane (140; 200; 300) and the second solid state drive backplane (150; 200; 300) includes: a bi-metal (221, 222, 223, 224; 321, 322) disposed adjacent to the solid state drives and configured to activate a signal in response to an increase in temperature; and a regulator (231, 232, 233, 234; 331, 332) configured to receive the first power from the power supply, and to power on (S140; S240) or power off (S120; S220) the solid state drives under control of the baseboard, wherein the regulator (231, 232, 233, 234; 331, 332) is configured to change (S140; S240; S340) a power-off state of at least one solid state drive adjacent to the bi-metal (221, 222, 223, 224; 321, 322) to a power-on state in response to the bi-metal (221, 222, 223, 224; 321, 322) activating the signal, and wherein the at least one solid state drive that is powered on is configured to perform (S160; S250; S370) a retention recovery operation. a bi-metal (221, 222, 223, 224; 321, 322) disposed adjacent to the solid state drives and configured to activate a signal in response to an increase in temperature; and a regulator (231, 232, 233, 234; 331, 332) configured to receive the first power from the power supply, and to power on (S140; S240) or power off (S120; S220) the solid state drives under control of the baseboard, wherein the regulator (231, 232, 233, 234; 331, 332) is configured to change (S140; S240; S340) a power-off state of at least one solid state drive adjacent to the bi-metal (221, 222, 223, 224; 321, 322) to a power-on state in response to the bi-metal (221, 222, 223, 224; 321, 322) activating the signal, and wherein the at least one solid state drive that is powered on is configured to perform (S160; S250; S370) a retention recovery operation.