A method for manufacturing of a device (300, 410-412) comprising a first substrate comprising a plurality of sets of nanostructures arranged on said first substrate, wherein each of said sets of nanostructures is individually electrically addressable, said method comprising the steps of: providing a first substrate having a first face, said first substrate having an insulating layer comprising an insulating material; providing a plurality of stacks on said insulating layer, said stacks being spaced apart from each other, wherein each stack comprises a first conductive layer comprising a first conductive material and a second conductive layer comprising a second conductive material different from said first conductive material, said second conductive layer being arranged on said first conductive layer for catalyzing nanostructure growth; heating said first substrate having said plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on said second conductive material; heating said first substrate having said plurality of stacks arranged thereon in an atmosphere such that nanostructures are formed on said second layer; characterized in that: said insulating material and said first conductive material are selected such that during said heating steps, said first conductive material interacts with said insulating material to form an electrically conductive portion within said insulating layer below each of said stacks, wherein said electrically conductive portion comprises a mixture of said first conductive material and said insulating material and/or reaction adducts thereof. providing a first substrate having a first face, said first substrate having an insulating layer comprising an insulating material; providing a plurality of stacks on said insulating layer, said stacks being spaced apart from each other, wherein each stack comprises a first conductive layer comprising a first conductive material and a second conductive layer comprising a second conductive material different from said first conductive material, said second conductive layer being arranged on said first conductive layer for catalyzing nanostructure growth; heating said first substrate having said plurality of stacks arranged thereon in a reducing atmosphere to enable formation of nanostructures on said second conductive material; heating said first substrate having said plurality of stacks arranged thereon in an atmosphere such that nanostructures are formed on said second layer; characterized in that: said insulating material and said first conductive material are selected such that during said heating steps, said first conductive material interacts with said insulating material to form an electrically conductive portion within said insulating layer below each of said stacks, wherein said electrically conductive portion comprises a mixture of said first conductive material and said insulating material and/or reaction adducts thereof. said insulating material and said first conductive material are selected such that during said heating steps, said first conductive material interacts with said insulating material to form an electrically conductive portion within said insulating layer below each of said stacks, wherein said electrically conductive portion comprises a mixture of said first conductive material and said insulating material and/or reaction adducts thereof.