Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: - an injector head comprising ∘ a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; ∘ a gas bearing comprising a bearing gas injector arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; - a support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that counters the injector head gas-bearing pressure in the conveying plane, so that the substrate is balanced supportless by said gas bearing pressure arrangement in between the injector head and the support part; and - a conveying system comprising a drive section; ∘ the drive section comprising transport elements arranged to provide relative movement of the substrate and the injector head along a plane of the substrate; ∘ said transport elements of said drive section comprising at least one gas inlet and at least one gas outlet for forming a drive pocket providing an oriented gas flow for providing said relative movement; said at least one gas inlet facing the surface of the substrate to be processed; ∘ said at least one gas inlet being arranged for providing a reactant, for providing, in the drive section, a reactant for reacting with the precursor supplied in the deposition space. - an injector head comprising ∘ a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; ∘ a gas bearing comprising a bearing gas injector arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; ∘ a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; ∘ a gas bearing comprising a bearing gas injector arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; - a support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that counters the injector head gas-bearing pressure in the conveying plane, so that the substrate is balanced supportless by said gas bearing pressure arrangement in between the injector head and the support part; and - a conveying system comprising a drive section; ∘ the drive section comprising transport elements arranged to provide relative movement of the substrate and the injector head along a plane of the substrate; ∘ said transport elements of said drive section comprising at least one gas inlet and at least one gas outlet for forming a drive pocket providing an oriented gas flow for providing said relative movement; said at least one gas inlet facing the surface of the substrate to be processed; ∘ said at least one gas inlet being arranged for providing a reactant, for providing, in the drive section, a reactant for reacting with the precursor supplied in the deposition space. ∘ the drive section comprising transport elements arranged to provide relative movement of the substrate and the injector head along a plane of the substrate; ∘ said transport elements of said drive section comprising at least one gas inlet and at least one gas outlet for forming a drive pocket providing an oriented gas flow for providing said relative movement; said at least one gas inlet facing the surface of the substrate to be processed; ∘ said at least one gas inlet being arranged for providing a reactant, for providing, in the drive section, a reactant for reacting with the precursor supplied in the deposition space.