A plasma processing apparatus comprising: a process container configured to accommodate a target substrate and to be vacuum-exhausted; a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being an upper electrode and the second electrode being a lower electrode configured to place the target substrate thereon, the first electrode comprising an outer electrode plate and an inner electrode plate both facing the second electrode; a first RF power supply configured to apply a first RF power for plasma generation to the outer electrode plate and the inner electrode plate of the first electrode; a DC power supply configured to apply a DC voltage to the first electrode, whereby an RF current from the first RF power supply substantially flows into the outer electrode plate and the inner electrode plate, while substantially no DC current from the DC power supply flows through the outer electrode plate but substantially flows into the inner electrode plate; a process gas supply unit configured to supply a process gas into the process container, plasma of the process gas being generated between the first electrode and the second electrode, characterized in that the outer electrode plate and an inner electrode plate of the first electrode both being supported by a conductive electrode support connected to the first RF power supply and the DC power supply, and the conductive electrode support supports the outer electrode plate and the inner electrode plate on the side thereof facing the inside of the process container, with an insulating film interposed between the electrode support and the outer electrode plate, such that the electrode support is decoupled for DC and coupled for RF relative to the outer electrode plate, and the electrode support is coupled for DC and for RF relative to the inner electrode plate. a process container configured to accommodate a target substrate and to be vacuum-exhausted; a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being an upper electrode and the second electrode being a lower electrode configured to place the target substrate thereon, the first electrode comprising an outer electrode plate and an inner electrode plate both facing the second electrode; a first RF power supply configured to apply a first RF power for plasma generation to the outer electrode plate and the inner electrode plate of the first electrode; a DC power supply configured to apply a DC voltage to the first electrode, whereby an RF current from the first RF power supply substantially flows into the outer electrode plate and the inner electrode plate, while substantially no DC current from the DC power supply flows through the outer electrode plate but substantially flows into the inner electrode plate; a process gas supply unit configured to supply a process gas into the process container, plasma of the process gas being generated between the first electrode and the second electrode, characterized in that the outer electrode plate and an inner electrode plate of the first electrode both being supported by a conductive electrode support connected to the first RF power supply and the DC power supply, and the conductive electrode support supports the outer electrode plate and the inner electrode plate on the side thereof facing the inside of the process container, with an insulating film interposed between the electrode support and the outer electrode plate, such that the electrode support is decoupled for DC and coupled for RF relative to the outer electrode plate, and the electrode support is coupled for DC and for RF relative to the inner electrode plate.