A semiconductor device fabrication process comprising: forming a first nitride layer on top of a first polysilicon layer which is on top of a first oxide layer; depositing a second polysilicon layer on top of the first nitride layer; depositing a photoresist layer on top of the second polysilicon layer; etching photoresist trenches in the photoresist layer until the second polysilicon layer is reached, wherein at least one photoresist trench has a width used for a group of metal patterns to be formed; etching each of the second polysilicon layer and the first nitride layer in the photoresist trenches until the first polysilicon layer is reached which creates a first plurality of mandrels comprising remaining photoresist, remaining second polysilicon and remaining first nitride; removing the remaining photoresist from the first plurality of mandrels; depositing a conformal spacer oxide layer over the first plurality of mandrels and exposed areas of the first polysilicon layer; etching the conformal spacer oxide layer leaving sidewalls on each of the first plurality of mandrels; depositing a conformal spacer nitride layer over the first plurality of mandrels and exposed areas of the first polysilicon layer; etching the conformal spacer nitride layer leaving sidewalls on the first plurality of mandrels to form a double spacer comprising remaining spacer nitride and remaining spacer oxide; depositing a second oxide layer over the double spacers and exposed areas of the first polysilicon layer; removing portions of the second oxide layer and the double spacer until the remaining first nitride in the first plurality of mandrels are reached, wherein the second polysilicon in the first plurality of mandrels is completely removed, wherein on top of the first polysilicon layer are alternating regions comprising the remaining spacer nitride, the remaining spacer oxide, the remaining first nitride, and remaining second oxide; removing each of the remaining spacer oxide and the remaining second oxide from the alternating regions on top of the first polysilicon layer; and etching the first polysilicon layer in areas unprotected by the remaining spacer nitride and the remaining first nitride of the alternating regions until the first oxide layer is reached, which creates a second plurality of mandrels comprising the remaining spacer nitride with remaining first polysilicon underneath or the remaining first nitride with remaining first polysilicon underneath, each of the second plurality of mandrels including one of the first plurality of mandrels. forming a first nitride layer on top of a first polysilicon layer which is on top of a first oxide layer; depositing a second polysilicon layer on top of the first nitride layer; depositing a photoresist layer on top of the second polysilicon layer; etching photoresist trenches in the photoresist layer until the second polysilicon layer is reached, wherein at least one photoresist trench has a width used for a group of metal patterns to be formed; etching each of the second polysilicon layer and the first nitride layer in the photoresist trenches until the first polysilicon layer is reached which creates a first plurality of mandrels comprising remaining photoresist, remaining second polysilicon and remaining first nitride; removing the remaining photoresist from the first plurality of mandrels; depositing a conformal spacer oxide layer over the first plurality of mandrels and exposed areas of the first polysilicon layer; etching the conformal spacer oxide layer leaving sidewalls on each of the first plurality of mandrels; depositing a conformal spacer nitride layer over the first plurality of mandrels and exposed areas of the first polysilicon layer; etching the conformal spacer nitride layer leaving sidewalls on the first plurality of mandrels to form a double spacer comprising remaining spacer nitride and remaining spacer oxide; depositing a second oxide layer over the double spacers and exposed areas of the first polysilicon layer; removing portions of the second oxide layer and the double spacer until the remaining first nitride in the first plurality of mandrels are reached, wherein the second polysilicon in the first plurality of mandrels is completely removed, wherein on top of the first polysilicon layer are alternating regions comprising the remaining spacer nitride, the remaining spacer oxide, the remaining first nitride, and remaining second oxide; removing each of the remaining spacer oxide and the remaining second oxide from the alternating regions on top of the first polysilicon layer; and etching the first polysilicon layer in areas unprotected by the remaining spacer nitride and the remaining first nitride of the alternating regions until the first oxide layer is reached, which creates a second plurality of mandrels comprising the remaining spacer nitride with remaining first polysilicon underneath or the remaining first nitride with remaining first polysilicon underneath, each of the second plurality of mandrels including one of the first plurality of mandrels.