An RFID transponder comprising detection means of the exceeding of a threshold temperature, wherein said RFID transponder comprises a dielectric substrate, and an antenna arranged on said dielectric substrate, and wherein said detection means are arranged on said dielectric substrate and comprise an interdigitated capacitor, said antenna being electrically and physically interfaced with armatures of said interdigitated capacitor, said RFID transponder being characterised in that said detection means comprise a multilayer dielectric structure arranged on said dielectric substrate, and a protective layer which contacts said multilayer dielectric structure, covering and applying a pressure on said multilayer dielectric structure, in the direction of said dielectric substrate, wherein said multilayer dielectric structure comprises a first dielectric layer which contacts said dielectric substrate, and a second dielectric layer arranged on said first dielectric layer and separated from said dielectric substrate, wherein said first dielectric layer comprises a material which is conformable by pressure and has a melting temperature equal to said threshold temperature, and wherein said second dielectric layer comprises permeable means capable of absorbing by capillarity said material of said first dielectric layer, in the molten state, and in that said armatures of said interdigitated capacitor comprise two interdigitated electrodes (E1, E2) to form a capacitive transducer, arranged on said dielectric substrate, wherein said material of said first dielectric layer contacts said two electrodes (E1, E2) and said permeable means are separated from said material of said first dielectric layer and from said interdigitated electrodes (E1, E2), when said dielectric substrate is not heated to temperatures greater than said melting temperature of said material of said first dielectric layer, and wherein, when said dielectric substrate is heated to temperatures greater than said melting temperature of said material of said first dielectric layer, said material melts and permeates by capillarity said permeable means, varying the resulting average dielectric permittivity of said multilayer dielectric structure and consequently the electrical impedance of the interdigitated capacitor having as the armatures the electrodes (E1, E2). wherein said RFID transponder comprises a dielectric substrate, and an antenna arranged on said dielectric substrate, and wherein said detection means are arranged on said dielectric substrate and comprise an interdigitated capacitor, said antenna being electrically and physically interfaced with armatures of said interdigitated capacitor, said RFID transponder being characterised in that said detection means comprise a multilayer dielectric structure arranged on said dielectric substrate, and a protective layer which contacts said multilayer dielectric structure, covering and applying a pressure on said multilayer dielectric structure, in the direction of said dielectric substrate, wherein said multilayer dielectric structure comprises a first dielectric layer which contacts said dielectric substrate, and a second dielectric layer arranged on said first dielectric layer and separated from said dielectric substrate, wherein said first dielectric layer comprises a material which is conformable by pressure and has a melting temperature equal to said threshold temperature, and wherein said second dielectric layer comprises permeable means capable of absorbing by capillarity said material of said first dielectric layer, in the molten state, and said multilayer dielectric structure comprises a first dielectric layer which contacts said dielectric substrate, and a second dielectric layer arranged on said first dielectric layer and separated from said dielectric substrate, wherein said first dielectric layer comprises a material which is conformable by pressure and has a melting temperature equal to said threshold temperature, and wherein said second dielectric layer comprises permeable means capable of absorbing by capillarity said material of said first dielectric layer, in the molten state, and in that said armatures of said interdigitated capacitor comprise two interdigitated electrodes (E1, E2) to form a capacitive transducer, arranged on said dielectric substrate, wherein said material of said first dielectric layer contacts said two electrodes (E1, E2) and said permeable means are separated from said material of said first dielectric layer and from said interdigitated electrodes (E1, E2), when said dielectric substrate is not heated to temperatures greater than said melting temperature of said material of said first dielectric layer, and wherein, when said dielectric substrate is heated to temperatures greater than said melting temperature of said material of said first dielectric layer, said material melts and permeates by capillarity said permeable means, varying the resulting average dielectric permittivity of said multilayer dielectric structure and consequently the electrical impedance of the interdigitated capacitor having as the armatures the electrodes (E1, E2).