A light emitting device comprising: a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch on the light emitting structure to control the light emitting structure, wherein the control switch includes: a body made of a silicon material and including a first dopant; source and drain regions (122, 123) including a second dopant on the body; a gate insulating layer on the body between the source and drain regions (122, 123); and a gate electrode on the gate insulating layer, wherein the body of the control switch is disposed on the second semiconductor layer and the first electrode is disposed on the first semiconductor layer, wherein the second electrode is extended from the second semiconductor layer so as to be electrically connected to one of the source and drain regions (122, 123), wherein one end of the second electrode is electrically connected to the second semiconductor layer and the other end of the second electrode is electrically connected to one of the source and drain regions (122, 123), wherein the second semiconductor layer comprises a roughness pattern thereof, wherein a contact surface between the one end of the second electrode and the second semiconductor layer is less than a surface of the roughness pattern. a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch on the light emitting structure to control the light emitting structure, wherein the control switch includes: a body made of a silicon material and including a first dopant; source and drain regions (122, 123) including a second dopant on the body; a gate insulating layer on the body between the source and drain regions (122, 123); and a gate electrode on the gate insulating layer, wherein the body of the control switch is disposed on the second semiconductor layer and the first electrode is disposed on the first semiconductor layer, wherein the second electrode is extended from the second semiconductor layer so as to be electrically connected to one of the source and drain regions (122, 123), wherein one end of the second electrode is electrically connected to the second semiconductor layer and the other end of the second electrode is electrically connected to one of the source and drain regions (122, 123), wherein the second semiconductor layer comprises a roughness pattern thereof, wherein a contact surface between the one end of the second electrode and the second semiconductor layer is less than a surface of the roughness pattern. a body made of a silicon material and including a first dopant; source and drain regions (122, 123) including a second dopant on the body; a gate insulating layer on the body between the source and drain regions (122, 123); and a gate electrode on the gate insulating layer, wherein the body of the control switch is disposed on the second semiconductor layer and the first electrode is disposed on the first semiconductor layer, wherein the second electrode is extended from the second semiconductor layer so as to be electrically connected to one of the source and drain regions (122, 123), wherein one end of the second electrode is electrically connected to the second semiconductor layer and the other end of the second electrode is electrically connected to one of the source and drain regions (122, 123), wherein the second semiconductor layer comprises a roughness pattern thereof, wherein a contact surface between the one end of the second electrode and the second semiconductor layer is less than a surface of the roughness pattern.