A switching device comprising: a cascode switch comprising at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors comprise a first transistor receiving the switching control signal through a control terminal and a second transistor comprising a control terminal connected to a first voltage source, and wherein a first terminal of the third switch is connected to the control terminal of the second transistor and a second terminal of the third switch is connected to a first terminal of the second transistor, and the third switch is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off; wherein each of the first transistor and the second transistor is an N-type Metal Oxide Silicon Field Effect Transistor, MOSFET, and the third switch is a P-type MOSFET; wherein the control terminal of the first transistor is a gate, the control terminal of the second transistor is a gate, and the control terminal of the third switch is a gate; and wherein the first terminal of the second transistor is a source; characterized in that: the first terminal of the third switch is a drain and the second terminal of the third switch is a source; and the switching device further comprises: a first diode comprising a cathode connected to the control terminal of the second transistor and an anode connected to the first terminal of the second transistor, and being connected with the third switch in parallel between the control terminal and the second terminal of the second transistor. a cascode switch comprising at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors comprise a first transistor receiving the switching control signal through a control terminal and a second transistor comprising a control terminal connected to a first voltage source, and wherein a first terminal of the third switch is connected to the control terminal of the second transistor and a second terminal of the third switch is connected to a first terminal of the second transistor, and the third switch is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off; wherein each of the first transistor and the second transistor is an N-type Metal Oxide Silicon Field Effect Transistor, MOSFET, and the third switch is a P-type MOSFET; wherein the control terminal of the first transistor is a gate, the control terminal of the second transistor is a gate, and the control terminal of the third switch is a gate; and wherein the first terminal of the second transistor is a source; characterized in that: the first terminal of the third switch is a drain and the second terminal of the third switch is a source; and the switching device further comprises: the first terminal of the third switch is a drain and the second terminal of the third switch is a source; and the switching device further comprises: a first diode comprising a cathode connected to the control terminal of the second transistor and an anode connected to the first terminal of the second transistor, and being connected with the third switch in parallel between the control terminal and the second terminal of the second transistor.