An image sensor comprising: a first semiconductor substrate provided with a plurality of pixels, each pixel including a photoelectric conversion unit for photoelectrically converting incident light to generate an electric charge, an accumulation unit configured to accumulate the electric charge generated by the photoelectric conversion unit, and a transfer transistor (Tx) configured to transfer the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second semiconductor substrate provided with a supply unit for each pixel, the supply unit comprising at least one transistor (Tr1, Tr2, Tr3, Tr4, Tr5, Tr6) configured to supply a gate of the transfer transistor with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit, characterized in that: each pixel includes a first reset unit that is provided in the first semiconductor substrate and is configured to reset an electrical charge accumulated in the accumulation unit based on a reset signal; the supply unit being configured to supply the gate of the transfer transistor with each of i) a voltage lower than a ground voltage and ii) a voltage higher than a ground voltage, wherein the supply unit is configured to supply the voltage higher than the ground voltage to the gate of the transfer transistor such that an electric charge is transferred to the accumulation unit and to supply the voltage less than the ground voltage to the gate of the transfer transistor such that an electric charge is not transferred to the accumulation unit, and as between two pixels of the plurality of pixels, the supply unit of one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a first period to the respective accumulation unit and the supply unit of the other one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a second period to the respective accumulation unit, the second period having a length different from that of the first period. a first semiconductor substrate provided with a plurality of pixels, each pixel including a photoelectric conversion unit for photoelectrically converting incident light to generate an electric charge, an accumulation unit configured to accumulate the electric charge generated by the photoelectric conversion unit, and a transfer transistor (Tx) configured to transfer the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second semiconductor substrate provided with a supply unit for each pixel, the supply unit comprising at least one transistor (Tr1, Tr2, Tr3, Tr4, Tr5, Tr6) configured to supply a gate of the transfer transistor with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit, characterized in that: each pixel includes a first reset unit that is provided in the first semiconductor substrate and is configured to reset an electrical charge accumulated in the accumulation unit based on a reset signal; the supply unit being configured to supply the gate of the transfer transistor with each of i) a voltage lower than a ground voltage and ii) a voltage higher than a ground voltage, wherein the supply unit is configured to supply the voltage higher than the ground voltage to the gate of the transfer transistor such that an electric charge is transferred to the accumulation unit and to supply the voltage less than the ground voltage to the gate of the transfer transistor such that an electric charge is not transferred to the accumulation unit, and as between two pixels of the plurality of pixels, the supply unit of one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a first period to the respective accumulation unit and the supply unit of the other one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a second period to the respective accumulation unit, the second period having a length different from that of the first period. each pixel includes a first reset unit that is provided in the first semiconductor substrate and is configured to reset an electrical charge accumulated in the accumulation unit based on a reset signal; the supply unit being configured to supply the gate of the transfer transistor with each of i) a voltage lower than a ground voltage and ii) a voltage higher than a ground voltage, wherein the supply unit is configured to supply the voltage higher than the ground voltage to the gate of the transfer transistor such that an electric charge is transferred to the accumulation unit and to supply the voltage less than the ground voltage to the gate of the transfer transistor such that an electric charge is not transferred to the accumulation unit, and as between two pixels of the plurality of pixels, the supply unit of one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a first period to the respective accumulation unit and the supply unit of the other one of the two pixels is configured to transfer the electric charge generated by the respective photoelectric conversion unit during a second period to the respective accumulation unit, the second period having a length different from that of the first period.