A semiconductor light emitting device, comprising: a semiconductor layer including a light emitting layer, the semiconductor layer having a first major surface, and a second major surface opposite to the first major surface; a first electrode provided on the second major surface of the semiconductor layer; a second electrode provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface; a first insulating layer provided on a side of the second major surface of the semiconductor layer, the first insulating layer having a first opening reaching the first electrode; a first interconnect layer provided in the first opening and on the first insulating layer on a side of the first insulating layer opposite to the second major surface to connect to the first electrode; and a second interconnect layer; characterized in that the first insulating layer has a second opening provided on the side face reaching the second electrode; the second interconnect layer is provided in the second opening and on the first insulating layer on the side of the first insulating layer opposite to the second major surface to connect to the second electrode provided on the side face, the second interconnect layer provided on the side face of the portion of the semiconductor layer with interposing the second electrode; and further comprising a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode; a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode; and a second insulating layer covering a periphery of the first metal pillar and a periphery of the second metal pillar. a semiconductor layer including a light emitting layer, the semiconductor layer having a first major surface, and a second major surface opposite to the first major surface; a first electrode provided on the second major surface of the semiconductor layer; a second electrode provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface; a first insulating layer provided on a side of the second major surface of the semiconductor layer, the first insulating layer having a first opening reaching the first electrode; a first interconnect layer provided in the first opening and on the first insulating layer on a side of the first insulating layer opposite to the second major surface to connect to the first electrode; and a second interconnect layer; characterized in that the first insulating layer has a second opening provided on the side face reaching the second electrode; the second interconnect layer is provided in the second opening and on the first insulating layer on the side of the first insulating layer opposite to the second major surface to connect to the second electrode provided on the side face, the second interconnect layer provided on the side face of the portion of the semiconductor layer with interposing the second electrode; and further comprising a first metal pillar provided on a face of the first interconnect layer on a side opposite to the first electrode; a second metal pillar provided on a face of the second interconnect layer on a side opposite to the second electrode; and a second insulating layer covering a periphery of the first metal pillar and a periphery of the second metal pillar.