A radiofrequency 'RF' power amplifier package, comprising: a semiconductor die comprising; an RF power transistor, such as an RF field-effect transistor, having: output bond pads, such as drain bond pads; input bond pads, such as gate bond pads; a plurality of input fingers, such as gate fingers, that are connected to the input bond pads; a plurality of output fingers, such as drain fingers, that are connected to the output bond pads; an input lead arranged on an input side of the package and an output lead arranged on an output side of the package; first bondwire connections extending from the input bond pads towards the input side of the package and connecting, either directly or indirectly, the input bond pads to the input lead; second bondwire connections extending from the output bond pads towards the output side of the package and connecting, either directly or indirectly, the output bond pads to the output lead; characterized in that the RF power amplifier package further comprises a plurality of shields, each shield of the plurality of shields being arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger, wherein each shield of the plurality of shields is connected to a ground terminal of the RF power transistor, and wherein each input finger of the plurality of input fingers, each output finger of the plurality of output fingers, and each shield of the plurality of shields are formed using a metal layer stack of multiple metal layers of which upper metal layers have a greater thickness than lower metal layers; wherein each input finger of the plurality of input fingers physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package, wherein each input finger of the plurality of input fingers physically extends for more than 70% in the region in between the input side of the package and the input bond pads, preferably more than 90%, and/or wherein each output finger of the plurality of output fingers physically extends for a larger part in a region in between the output bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads, wherein each output finger of the plurality of output fingers physically extends for more than 70% in the region in between the output bond pads and the output side of the package, preferably more than 90%. a semiconductor die comprising; an RF power transistor, such as an RF field-effect transistor, having: output bond pads, such as drain bond pads; input bond pads, such as gate bond pads; a plurality of input fingers, such as gate fingers, that are connected to the input bond pads; a plurality of output fingers, such as drain fingers, that are connected to the output bond pads; output bond pads, such as drain bond pads; input bond pads, such as gate bond pads; a plurality of input fingers, such as gate fingers, that are connected to the input bond pads; a plurality of output fingers, such as drain fingers, that are connected to the output bond pads; an input lead arranged on an input side of the package and an output lead arranged on an output side of the package; first bondwire connections extending from the input bond pads towards the input side of the package and connecting, either directly or indirectly, the input bond pads to the input lead; second bondwire connections extending from the output bond pads towards the output side of the package and connecting, either directly or indirectly, the output bond pads to the output lead; characterized in that the RF power amplifier package further comprises a plurality of shields, each shield of the plurality of shields being arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger, wherein each shield of the plurality of shields is connected to a ground terminal of the RF power transistor, and wherein each input finger of the plurality of input fingers, each output finger of the plurality of output fingers, and each shield of the plurality of shields are formed using a metal layer stack of multiple metal layers of which upper metal layers have a greater thickness than lower metal layers; wherein each input finger of the plurality of input fingers physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package, wherein each input finger of the plurality of input fingers physically extends for more than 70% in the region in between the input side of the package and the input bond pads, preferably more than 90%, and/or wherein each output finger of the plurality of output fingers physically extends for a larger part in a region in between the output bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads, wherein each output finger of the plurality of output fingers physically extends for more than 70% in the region in between the output bond pads and the output side of the package, preferably more than 90%.