A method for producing an alloy ribbon, comprising: a preparation step of preparing a stack of a plurality of amorphous alloy ribbons; a first heat treatment step of heating the stack to a first temperature range lower than a crystallization start temperature of the amorphous alloy ribbons; and a second heat treatment step of heating an end of the stack to a second temperature range equal to or higher than the crystallization start temperature after the first heat treatment step, wherein: after the first heat treatment step, an ambient temperature of the stack is held so that the stack is kept in a temperature range that allows the stack to be crystallized by heating the end of the stack to the second temperature range in the second heat treatment step; wherein after the first heat treatment step, the end of the stack is heated to the second temperature range with the part of the stack other than this end being kept in a temperature range lower than the crystallization start temperature, and the end of the stack is kept in the second temperature range for a time required for crystallization; and a following expression is satisfied, where Q1 represents an amount of heat required to heat the stack to the first temperature range in the first heat treatment step, Q2 represents an amount of heat that is applied to the stack when heating the end of the stack to the second temperature range in the second heat treatment step, Q3 represents an amount of heat that is released during crystallization of the stack, and Q4 represents an amount of heat required to heat the entire stack to the crystallization start temperature Q 1 + Q 2 + Q 3 ≥ Q 4 a preparation step of preparing a stack of a plurality of amorphous alloy ribbons; a first heat treatment step of heating the stack to a first temperature range lower than a crystallization start temperature of the amorphous alloy ribbons; and a second heat treatment step of heating an end of the stack to a second temperature range equal to or higher than the crystallization start temperature after the first heat treatment step, wherein: after the first heat treatment step, an ambient temperature of the stack is held so that the stack is kept in a temperature range that allows the stack to be crystallized by heating the end of the stack to the second temperature range in the second heat treatment step; wherein after the first heat treatment step, the end of the stack is heated to the second temperature range with the part of the stack other than this end being kept in a temperature range lower than the crystallization start temperature, and the end of the stack is kept in the second temperature range for a time required for crystallization; and a following expression is satisfied, where Q1 represents an amount of heat required to heat the stack to the first temperature range in the first heat treatment step, Q2 represents an amount of heat that is applied to the stack when heating the end of the stack to the second temperature range in the second heat treatment step, Q3 represents an amount of heat that is released during crystallization of the stack, and Q4 represents an amount of heat required to heat the entire stack to the crystallization start temperature Q 1 + Q 2 + Q 3 ≥ Q 4 after the first heat treatment step, an ambient temperature of the stack is held so that the stack is kept in a temperature range that allows the stack to be crystallized by heating the end of the stack to the second temperature range in the second heat treatment step; wherein after the first heat treatment step, the end of the stack is heated to the second temperature range with the part of the stack other than this end being kept in a temperature range lower than the crystallization start temperature, and the end of the stack is kept in the second temperature range for a time required for crystallization; and a following expression is satisfied, where Q1 represents an amount of heat required to heat the stack to the first temperature range in the first heat treatment step, Q2 represents an amount of heat that is applied to the stack when heating the end of the stack to the second temperature range in the second heat treatment step, Q3 represents an amount of heat that is released during crystallization of the stack, and Q4 represents an amount of heat required to heat the entire stack to the crystallization start temperature Q 1 + Q 2 + Q 3 ≥ Q 4