Method for actuating a MOSFET, in particular a MOSFET based on a semiconductor with a wide bandgap, a converter having a number of MOSFETs, wherein after the occurrence of a fault, which has resulted in all MOSFETs of the converter switching off, - it is monitored whether the body diode of the MOSFET is electrically conducting, - the MOSFET is switched on if the body diode is electrically conducting, and - the MOSFET is actuated as a function of an actuation signal if the body diode is electrically conducting, - wherein a drain-source voltage is detected between the drain terminal and the source terminal of the MOSFET, characterised in that - a first voltage threshold value is predetermined for the drain-source voltage and it is concluded therefrom that the body diode is electrically conducting when the drain-source voltage fails to reach the first voltage threshold value, - a second voltage threshold value is predetermined for the drain-source voltage and it is concluded therefrom that the body diode is electrically blocking when the drain-source voltage exceeds the second voltage threshold value, - the direction of a drain-source current flowing between the drain terminal and the source terminal of the MOSFET is detected and it is concluded therefrom that the body diode is electrically conducting when the drain-source current flows in a forward direction of the body diode, - it is concluded therefrom that the body diode is electrically blocking when the drain-source current flows opposite to the forward direction of the body diode, - in a first method step the voltage threshold values (U1, U2) are predetermined for the drain-source voltage, wherein in a second method step a monitoring unit detects the drain-source voltage and forms an additional actuation signal as a function of the drain-source voltage and outputs the same to a control unit and wherein in a third method step, the MOSFET is switched on by the control unit after the occurrence of a fault, which has resulted in all MOSFETs of the converter switching off, and - a switch-on voltage is applied between the gate terminal and the source terminal of the MOSFET when the additional actuation signal assumes the value 1, wherein the value 1 of the additional actuation signal signals that the body diode is electrically conducting and wherein the value 1 of the additional actuation signal signals that the body diode is electrically conducting, and otherwise, the MOSFET is actuated by the control unit as a function of the actuation signal, wherein the switch-on voltage is applied between the gate terminal and the source terminal of the MOSFET when the actuation signal assumes the value 1, or a switch-off voltage is applied between the gate terminal and the source terminal of the MOSFET when the actuation signal assumes the value 0, wherein after the third method step, the method is continued with the second method step. - it is monitored whether the body diode of the MOSFET is electrically conducting, - the MOSFET is switched on if the body diode is electrically conducting, and - the MOSFET is actuated as a function of an actuation signal if the body diode is electrically conducting, - wherein a drain-source voltage is detected between the drain terminal and the source terminal of the MOSFET, characterised in that - a first voltage threshold value is predetermined for the drain-source voltage and it is concluded therefrom that the body diode is electrically conducting when the drain-source voltage fails to reach the first voltage threshold value, - a second voltage threshold value is predetermined for the drain-source voltage and it is concluded therefrom that the body diode is electrically blocking when the drain-source voltage exceeds the second voltage threshold value, - the direction of a drain-source current flowing between the drain terminal and the source terminal of the MOSFET is detected and it is concluded therefrom that the body diode is electrically conducting when the drain-source current flows in a forward direction of the body diode, - it is concluded therefrom that the body diode is electrically blocking when the drain-source current flows opposite to the forward direction of the body diode, - in a first method step the voltage threshold values (U1, U2) are predetermined for the drain-source voltage, wherein in a second method step a monitoring unit detects the drain-source voltage and forms an additional actuation signal as a function of the drain-source voltage and outputs the same to a control unit and wherein in a third method step, the MOSFET is switched on by the control unit after the occurrence of a fault, which has resulted in all MOSFETs of the converter switching off, and - a switch-on voltage is applied between the gate terminal and the source terminal of the MOSFET when the additional actuation signal assumes the value 1, wherein the value 1 of the additional actuation signal signals that the body diode is electrically conducting and wherein the value 1 of the additional actuation signal signals that the body diode is electrically conducting, and otherwise, the MOSFET is actuated by the control unit as a function of the actuation signal, wherein the switch-on voltage is applied between the gate terminal and the source terminal of the MOSFET when the actuation signal assumes the value 1, or a switch-off voltage is applied between the gate terminal and the source terminal of the MOSFET when the actuation signal assumes the value 0, wherein after the third method step, the method is continued with the second method step.