A semiconductor light-emitting device comprising: first and second doped semiconductor layers that are arranged for emitting light at a nominal emission vacuum wavelength λ 0 resulting from carrier recombination at a junction or active layer between the first and second semiconductor layers, the first and second semiconductor layers and the junction or active layer being coextensive over a contiguous area of the device; a first set of one or more electrical contacts in electrical contact with the first semiconductor layer at a first surface thereof opposite the second semiconductor layer, each electrical contact of the first set being a composite electrical contact comprising (i) a corresponding electrically conductive layer extending over a corresponding areal region of the first surface of the first semiconductor layer within the contiguous area of the device, (ii) a corresponding transparent dielectric layer between the corresponding conductive layer and the first semiconductor layer, and (iii) one or more corresponding electrically conductive vias through the corresponding dielectric layer, each via providing a localized, circumscribed electrical connection between the corresponding conductive layer and the first semiconductor layer; a second set of one or more electrical contacts in electrical contact with the second semiconductor layer; and a set of multiple nanostructured optical elements being positioned at the first surface of the first semiconductor layer, with each nanostructured optical element being arranged as one or more volumes of dielectric material protruding into the corresponding dielectric layer of each composite electrical contact, wherein the set of multiple nanostructured optical elements is arranged so as to redirect at least a portion of light at the nominal emission vacuum wavelength λ 0 propagating laterally in one or more selected optical modes supported by the first and second semiconductor layers to exit the device through the second semiconductor layer. first and second doped semiconductor layers that are arranged for emitting light at a nominal emission vacuum wavelength λ 0 resulting from carrier recombination at a junction or active layer between the first and second semiconductor layers, the first and second semiconductor layers and the junction or active layer being coextensive over a contiguous area of the device; a first set of one or more electrical contacts in electrical contact with the first semiconductor layer at a first surface thereof opposite the second semiconductor layer, each electrical contact of the first set being a composite electrical contact comprising (i) a corresponding electrically conductive layer extending over a corresponding areal region of the first surface of the first semiconductor layer within the contiguous area of the device, (ii) a corresponding transparent dielectric layer between the corresponding conductive layer and the first semiconductor layer, and (iii) one or more corresponding electrically conductive vias through the corresponding dielectric layer, each via providing a localized, circumscribed electrical connection between the corresponding conductive layer and the first semiconductor layer; a second set of one or more electrical contacts in electrical contact with the second semiconductor layer; and a set of multiple nanostructured optical elements being positioned at the first surface of the first semiconductor layer, with each nanostructured optical element being arranged as one or more volumes of dielectric material protruding into the corresponding dielectric layer of each composite electrical contact, wherein the set of multiple nanostructured optical elements is arranged so as to redirect at least a portion of light at the nominal emission vacuum wavelength λ 0 propagating laterally in one or more selected optical modes supported by the first and second semiconductor layers to exit the device through the second semiconductor layer.