A method for operating non-volatile storage, comprising: programming a group of non-volatile storage elements that are associated with a word line having a first end and a second end, the non-volatile storage elements are programmed during a programming process to at least four data states (Er, A, B,... G), including applying a first reference voltage (VvG) to the first end of the word line to verify whether non-volatile storage elements are programmed to a first data state of the at least four data states, wherein application of the first reference voltage has a first duration; maintaining information until after the programming process is complete that indicates which of the non-volatile storage elements were intended to be programmed to the first data state; applying a second reference voltage to the first end of the word line after the programming process is complete, the second reference voltage is associated with the first data state, application of the second reference voltage has a second duration that is longer than the first duration; determining results of applying the second reference voltage, including determining how many of the non-volatile storage elements that were intended to be programmed to the first data state conducted a current in response to the second reference voltage; and determining whether the word line has an abnormally high resistance portion based on whether the non-volatile storage elements that were both intended to be programmed to the first data state and that conducted a current in response to the second reference voltage is greater than a threshold number; wherein the first duration is not sufficient for the first reference voltage to cause non-volatile storage elements that were intended to be programmed to the first data state and that are between an abnormally high resistance portion of the word line and the second end to conduct a current; and the second duration is sufficient for the second reference voltage to cause non-volatile storage elements that were intended to be programmed to the first data state and that are between an abnormally high resistance portion of the word line and the second end to conduct a current. programming a group of non-volatile storage elements that are associated with a word line having a first end and a second end, the non-volatile storage elements are programmed during a programming process to at least four data states (Er, A, B,... G), including applying a first reference voltage (VvG) to the first end of the word line to verify whether non-volatile storage elements are programmed to a first data state of the at least four data states, wherein application of the first reference voltage has a first duration; maintaining information until after the programming process is complete that indicates which of the non-volatile storage elements were intended to be programmed to the first data state; applying a second reference voltage to the first end of the word line after the programming process is complete, the second reference voltage is associated with the first data state, application of the second reference voltage has a second duration that is longer than the first duration; determining results of applying the second reference voltage, including determining how many of the non-volatile storage elements that were intended to be programmed to the first data state conducted a current in response to the second reference voltage; and determining whether the word line has an abnormally high resistance portion based on whether the non-volatile storage elements that were both intended to be programmed to the first data state and that conducted a current in response to the second reference voltage is greater than a threshold number; wherein the first duration is not sufficient for the first reference voltage to cause non-volatile storage elements that were intended to be programmed to the first data state and that are between an abnormally high resistance portion of the word line and the second end to conduct a current; and the second duration is sufficient for the second reference voltage to cause non-volatile storage elements that were intended to be programmed to the first data state and that are between an abnormally high resistance portion of the word line and the second end to conduct a current.