A transistor, characterized by comprising: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device comprises a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heat conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer; and wherein the thermocouple heat conducting device further contains power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device; wherein the thermocouple heat conducting device comprises groups of N type thermocouples and P type thermocouples, multiple channels arranged in sequence are set on the metal layer, the openings of the channels are located on the opposite side of the bonding surface of the metal layer and the semiconductor compound layer, the heat conducting layer is grown at the bottom of each channel, multiple groups of N type thermocouples and P type thermocouples are grown on the heat conducting layer along the channels, the N type thermocouples and the P type thermocouples in each group are electrically connected with each other, the N type thermocouple and the P type thermocouple in adjacent groups are electrically connected with each other to form a path of N type thermocouple to P type thermocouple to N type thermocouple, and the power supply arms are electrically connected with the N type thermocouple at one end of each channel and the P type thermocouple at the other end of that channel. a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device comprises a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heat conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer; and wherein the thermocouple heat conducting device further contains power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device; wherein the thermocouple heat conducting device comprises groups of N type thermocouples and P type thermocouples, multiple channels arranged in sequence are set on the metal layer, the openings of the channels are located on the opposite side of the bonding surface of the metal layer and the semiconductor compound layer, the heat conducting layer is grown at the bottom of each channel, multiple groups of N type thermocouples and P type thermocouples are grown on the heat conducting layer along the channels, the N type thermocouples and the P type thermocouples in each group are electrically connected with each other, the N type thermocouple and the P type thermocouple in adjacent groups are electrically connected with each other to form a path of N type thermocouple to P type thermocouple to N type thermocouple, and the power supply arms are electrically connected with the N type thermocouple at one end of each channel and the P type thermocouple at the other end of that channel.