Method for transferring at least one thin film of solid material defined within an initial substrate, wherein the method comprises the following steps: - the production of the initial substrate consisting of a solid part supporting a film or multifilm structure within which said thin film of solid material must be defined and, during this production, the formation of a layer of inclusions (3, 7, 32) in the initial substrate so that once the production of the initial substrate is completed, the layer of inclusions is found at a depth corresponding to the desired thickness for the thin film, the layer of inclusions being formed at least by a film deposition technique or a technique of etching a layer of the substrate, said film deposition technique producing stacks of one or more films, in which stacks the composition of the films, their state of stress, their structure or their morphology are varied so as to generate inclusions forming said layer of inclusions, the deposition of films denoting the fact of adding and/or producing this or these films, said technique of etching a layer of the substrate comprising dry etching and/or wet chemical etching and/or electrochemical etching of cavities of chosen sizes in said layer of the substrate, which are open over a very small surface area, these cavities forming said inclusions, these inclusions being capable of constituting a confinement zone for the gaseous species that will then be implanted, in a disturbed layer of thinner thickness than that which would be obtained in the absence of this layer of inclusions, an inclusion being a volume of material having properties different from those of the material of the substrate from which it is desired to transfer said at least one thin film, and - a subsequent step of implanting said gaseous species, so as to bring the gaseous species into the layer of inclusions (3, 7, 32), the dose of gaseous species implanted being sufficient to cause the formation of microcavities capable of constituting a fracture plane allowing the thin film to be separated from the remainder of the substrate. - the production of the initial substrate consisting of a solid part supporting a film or multifilm structure within which said thin film of solid material must be defined and, during this production, the formation of a layer of inclusions (3, 7, 32) in the initial substrate so that once the production of the initial substrate is completed, the layer of inclusions is found at a depth corresponding to the desired thickness for the thin film, the layer of inclusions being formed at least by a film deposition technique or a technique of etching a layer of the substrate, said film deposition technique producing stacks of one or more films, in which stacks the composition of the films, their state of stress, their structure or their morphology are varied so as to generate inclusions forming said layer of inclusions, the deposition of films denoting the fact of adding and/or producing this or these films, said technique of etching a layer of the substrate comprising dry etching and/or wet chemical etching and/or electrochemical etching of cavities of chosen sizes in said layer of the substrate, which are open over a very small surface area, these cavities forming said inclusions, these inclusions being capable of constituting a confinement zone for the gaseous species that will then be implanted, in a disturbed layer of thinner thickness than that which would be obtained in the absence of this layer of inclusions, an inclusion being a volume of material having properties different from those of the material of the substrate from which it is desired to transfer said at least one thin film, and - a subsequent step of implanting said gaseous species, so as to bring the gaseous species into the layer of inclusions (3, 7, 32), the dose of gaseous species implanted being sufficient to cause the formation of microcavities capable of constituting a fracture plane allowing the thin film to be separated from the remainder of the substrate.