A method for conducting a read-verification operation on a target memory cell in a three-dimensional memory device, comprising: - removing fast charges of the target memory cell at a read-prepare step, comprising: - applying a top select gate voltage (V tsg) on a selected top select gate (Sel_TSG) of a selected memory string containing the target memory cell, wherein applying the top select gate voltage (V tsg) comprises electrically connecting the selected memory string to a bit line; - applying a lower select gate voltage (V lsg) on a lower select gate of the selected memory string containing the target memory cell, wherein applying the lower select gate voltage (V lsg) comprises electrically connecting the selected memory string to an array common source; - applying a prepare voltage (V prepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string; - applying a first off voltage (V off) on a selected word line (Sel_WL) associated with the target memory cell; and - applying a pass voltage (V pass) on an unselected word line (Unsel_WL), wherein applying the pass voltage (V pass) comprises applying the pass voltage with a delay period after the selected top select gate (Sel_TSG) and the lower select gate are at the top select gate voltage (V tsg) and the lower select gate voltage (V lsg), respectively; and - measuring a threshold voltage of the target memory cell at a sensing step after the read-prepare step; wherein measuring the threshold voltage comprises applying a read voltage (V read) on the selected word line (Sel_WL). - removing fast charges of the target memory cell at a read-prepare step, comprising: - applying a top select gate voltage (V tsg) on a selected top select gate (Sel_TSG) of a selected memory string containing the target memory cell, wherein applying the top select gate voltage (V tsg) comprises electrically connecting the selected memory string to a bit line; - applying a lower select gate voltage (V lsg) on a lower select gate of the selected memory string containing the target memory cell, wherein applying the lower select gate voltage (V lsg) comprises electrically connecting the selected memory string to an array common source; - applying a prepare voltage (V prepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string; - applying a first off voltage (V off) on a selected word line (Sel_WL) associated with the target memory cell; and - applying a pass voltage (V pass) on an unselected word line (Unsel_WL), wherein applying the pass voltage (V pass) comprises applying the pass voltage with a delay period after the selected top select gate (Sel_TSG) and the lower select gate are at the top select gate voltage (V tsg) and the lower select gate voltage (V lsg), respectively; and - applying a top select gate voltage (V tsg) on a selected top select gate (Sel_TSG) of a selected memory string containing the target memory cell, wherein applying the top select gate voltage (V tsg) comprises electrically connecting the selected memory string to a bit line; - applying a lower select gate voltage (V lsg) on a lower select gate of the selected memory string containing the target memory cell, wherein applying the lower select gate voltage (V lsg) comprises electrically connecting the selected memory string to an array common source; - applying a prepare voltage (V prepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string; - applying a first off voltage (V off) on a selected word line (Sel_WL) associated with the target memory cell; and - applying a pass voltage (V pass) on an unselected word line (Unsel_WL), wherein applying the pass voltage (V pass) comprises applying the pass voltage with a delay period after the selected top select gate (Sel_TSG) and the lower select gate are at the top select gate voltage (V tsg) and the lower select gate voltage (V lsg), respectively; - measuring a threshold voltage of the target memory cell at a sensing step after the read-prepare step; wherein measuring the threshold voltage comprises applying a read voltage (V read) on the selected word line (Sel_WL).