mhurhangee/ep-ind-claims huggingface dataset:
A ceramic heater comprising: a heater body that is made of ceramic, has a tubular shape, and extends in an axial direction; and a flange that is made of a metal, has an annular shape, and is fitted onto the heater body, wherein a ground wire is connected to the flange, the flange has a recess-shaped portion which includes a side portion that has a cylindrical shape and extends in the axial direction, and a bottom portion that is continuous with the side portion and is curved so as to have a radius which reduces in a radial direction, the recess-shaped portion is filled with an insulating material, and is joined to the heater body via the insulating material, and is characterized in that the flange further has an extension portion that is continuous with the bottom portion, and extends toward an end side in the axial direction, wherein the extension portion may be directly exposed to water, wherein the extension portion protrudes beyond the insulating material toward the end side in the axial direction and a heater pattern is disposed on the end side of the ceramic heater. a heater body that is made of ceramic, has a tubular shape, and extends in an axial direction; and a flange that is made of a metal, has an annular shape, and is fitted onto the heater body, wherein a ground wire is connected to the flange, the flange has a recess-shaped portion which includes a side portion that has a cylindrical shape and extends in the axial direction, and a bottom portion that is continuous with the side portion and is curved so as to have a radius which reduces in a radial direction, the recess-shaped portion is filled with an insulating material, and is joined to the heater body via the insulating material, and is characterized in that the flange further has an extension portion that is continuous with the bottom portion, and extends toward an end side in the axial direction, wherein the extension portion may be directly exposed to water, wherein the extension portion protrudes beyond the insulating material toward the end side in the axial direction and a heater pattern is disposed on the end side of the ceramic heater.
A surgical system drape comprising: a first drape portion configured to receive a first manipulator of a surgical system; a second drape portion including a plurality of pockets, each pocket (1105a to 1105d) of the plurality of pockets being configured to receive a corresponding one of a plurality of second manipulators of the surgical system; and a rotatable seal coupling the second drape portion to the first drape portion. a first drape portion configured to receive a first manipulator of a surgical system; a second drape portion including a plurality of pockets, each pocket (1105a to 1105d) of the plurality of pockets being configured to receive a corresponding one of a plurality of second manipulators of the surgical system; and a rotatable seal coupling the second drape portion to the first drape portion.
A method for producing a battery, comprising the steps of: (a) preparing a first electrode by providing a substrate and depositing onto the substrate at least one silicon-based semiconductor layer (18, 18a,b,c) of a specific porosity, in particular a doped micro-crystalline silicon layer that may comprise additions of Ge, Sn and/or C; (b) micro-stabilizing of the semiconductor layer (18, 18a,b,c) by varying the porosity by volume or locally, the doping or the crystallization, for increasing the ion-absorption capacity and/or the mechanical stability; (c) arranging the first electrode together with a second electrode and an electrolyte within a housing; (d) contacting the two electrodes (24, 25) and connecting with external terminals (26, 28) accessible from outside the housing; wherein the semiconductor layer (18, 18a,b,c) is irridiated by means of a laser for increasing the porosity of active regions for absorbing ions, in particular lithiumions, by releasing gas from the semiconductor layer. (a) preparing a first electrode by providing a substrate and depositing onto the substrate at least one silicon-based semiconductor layer (18, 18a,b,c) of a specific porosity, in particular a doped micro-crystalline silicon layer that may comprise additions of Ge, Sn and/or C; (b) micro-stabilizing of the semiconductor layer (18, 18a,b,c) by varying the porosity by volume or locally, the doping or the crystallization, for increasing the ion-absorption capacity and/or the mechanical stability; (c) arranging the first electrode together with a second electrode and an electrolyte within a housing; (d) contacting the two electrodes (24, 25) and connecting with external terminals (26, 28) accessible from outside the housing;
A method of growing nitride based semiconductor nanowires utilising a CVD-based selective area growth technique, wherein a nitrogen source and a metal-organic source are present during a nanowire growth step, wherein the method comprises the steps of: - providing a growth mask on a substrate - forming openings in the growth mask; - growing nanowires by the CVD-based selective area growth technique such that the nanowires protrude above the growth mask; and - growing a volume element comprising a plurality of shell layers on the nanowires such that a pn-junction is provided in each volume element, wherein the nitrogen and the metal-organic precursor source flows are continuous during the nanowire growth step. - providing a growth mask on a substrate - forming openings in the growth mask; - growing nanowires by the CVD-based selective area growth technique such that the nanowires protrude above the growth mask; and - growing a volume element comprising a plurality of shell layers on the nanowires such that a pn-junction is provided in each volume element,
A self-supporting spatial structure, particularly for furniture construction, comprising connectors and walls characterised in that the structure is created by folding a cut-out sheet along the incisions of the sheet, the incisions creating at least two parallel rows of rectangles or squares, separated by symmetrical placed triangles, whose apexes coincide with the line of incision of the first row, and the angle between them is the condition for the angle between the blocks after folding by complementing the angle to obtain 180° and the parallel rows of rectangles are joined by trapeziums, which are equipped at their outer edges with foldable triangular, trapezoidal or rectangular overlaps wherein in the second row of the rectangles or squares the rectangles or squares are separated by symmetrical trapeziums touching each other along shorter bases, wherein the bases are located in the line of incisions of the first row of the rectangles or squares, and a rhombic pass-through cut-out is created between the symmetrical placed triangles and the symmetrical trapeziums.
A process for the manufacture of solid thermoset foam, comprising the following successive stages: (a) providing an expandable and thermosetting composition containing: - a first reactant chosen from reducing sugars, - a second reactant chosen from primary amines, primary amine acid addition salts, secondary amines, secondary amine acid addition salts, and ammonium salts of formula R n- (NH 4 +) n where n is an integer at least equal to 1 and R n- represents the residue of an organic or inorganic acid, the expandable and thermosetting composition containing less than 50% by weight of water, (b) introducing the expandable and thermosetting composition into a mold or applying the expandable composition on a support so as to form a film having a thickness at least equal to 1 mm, (c) heating the expandable and thermosetting composition to a temperature at least equal to 140°C, so as to react the first reactant with the second reactant and to form, by polymerization and chemical foaming, a block of solid thermoset foam, the amount of expandable and thermosetting composition being such that the volume of the resulting block of solid thermoset foam is at least equal to 500 cm 3, and the expandable composition additionally containing one or more surface-active agents. (a) providing an expandable and thermosetting composition containing: - a first reactant chosen from reducing sugars, - a second reactant chosen from primary amines, primary amine acid addition salts, secondary amines, secondary amine acid addition salts, and ammonium salts of formula R n- (NH 4 +) n where n is an integer at least equal to 1 and R n- represents the residue of an organic or inorganic acid, the expandable and thermosetting composition containing less than 50% by weight of water, - a first reactant chosen from reducing sugars, - a second reactant chosen from primary amines, primary amine acid addition salts, secondary amines, secondary amine acid addition salts, and ammonium salts of formula R n- (NH 4 +) n where n is an integer at least equal to 1 and R n- represents the residue of an organic or inorganic acid, (b) introducing the expandable and thermosetting composition into a mold or applying the expandable composition on a support so as to form a film having a thickness at least equal to 1 mm, (c) heating the expandable and thermosetting composition to a temperature at least equal to 140°C, so as to react the first reactant with the second reactant and to form, by polymerization and chemical foaming, a block of solid thermoset foam,
Absorbent article, such as a sanitary towel, a panty liner, an incontinence pad or a diaper, said article having transverse (x) and longitudinal (y) directions, said article further having front, crotch and rear portions, said article comprising an absorbent core of unitary construction, said absorbent core being defined by a pair of opposing longitudinal edges (20;22) and a pair of opposing transverse edges (24;26), said absorbent core having at least a first and a second region, the average density of the absorbent core in these first and second regions (28, 30) being lower than the average density of the absorbent core surrounding said first and second regions (28;30), said first and second lower density regions (28;30) being arranged symmetrically about the longitudinal centre line of the article and extending to the respective longitudinal edges (20;22) of the absorbent core, the distance (a x) between said first and second lower density regions (28;30) in the transverse direction varying along the longitudinal direction of the article and thereby exhibiting maxima and minima along the longitudinal direction of the article, characterized in that a minimum distance (a 1) between said first and second lower density regions (28;30) in the transverse direction is located at least in the transition between the crotch portion and the front portion of the article.
A method for executing a vector alignment instruction, the method comprising: accessing a span bit (337, 387) and a byte location from a value (Rt) generated on a first processor (306, 356), wherein the value is stored in a register in a scalar register file (307, 357) that is shared between the first processor and a second processor (304, 354); and aligning on the second processor a set of data values that begins at the byte location within a source register of a vector register file, VRF, (310, 360), the set of data values to be stored as a set of aligned data values at a target register in the VRF, wherein the binary value of the span bit is used to select a first register of a first group of registers in the VRF or a second register of a second group of registers in the VRF as the source register of the VRF. accessing a span bit (337, 387) and a byte location from a value (Rt) generated on a first processor (306, 356), wherein the value is stored in a register in a scalar register file (307, 357) that is shared between the first processor and a second processor (304, 354); and aligning on the second processor a set of data values that begins at the byte location within a source register of a vector register file, VRF, (310, 360), the set of data values to be stored as a set of aligned data values at a target register in the VRF, wherein the binary value of the span bit is used to select a first register of a first group of registers in the VRF or a second register of a second group of registers in the VRF as the source register of the VRF.
Cooling system having at least one cooling element, through which coolant flows, for cooling a battery, in particular for cooling a battery which is configured as an energy source for the drive of hybrid, plug-in hybrid or electric vehicles, and having further components (4, 5, 12), through which coolant flows, comprising at least one line for feeding coolant to the at least one cooling element and at least one line for discharging coolant from the at least one cooling element, at least one part of the further components (4, 5, 12), through which coolant flows, being surrounded at least partially by at least one encasing element in such a way that a closed volumetric space is formed between the at least one encasing element and the at least one part of the further components (4, 5, 12), through which coolant flows, characterized in that the encasing element is configured as a plastic film.
Method for producing an optical or optoelectronic assembly (1, 2), comprising a) providing a composite plate, wherein the composite plate comprises at least one first nonmetallic layer and a first metallic layer and a second metallic layer, b) subdividing the second metallic layer into a plurality of second regions, c) providing a start surface on the first metallic layer, d) producing a cooler structure on the start surface by selectively melting and/or by selectively sintering at least one first material, e) providing an optical or optoelectronic component, wherein the component comprises at least one optically pumped laser disc or at least one diode laser bar or at least one light emitting diode, f) securing the component on a mounting surface arranged on the second metallic layer, wherein securing the component is carried out after producing the cooler structure and the component covers a plurality of second regions of the second metallic layer. a) providing a composite plate, wherein the composite plate comprises at least one first nonmetallic layer and a first metallic layer and a second metallic layer, b) subdividing the second metallic layer into a plurality of second regions, c) providing a start surface on the first metallic layer, d) producing a cooler structure on the start surface by selectively melting and/or by selectively sintering at least one first material, e) providing an optical or optoelectronic component, wherein the component comprises at least one optically pumped laser disc or at least one diode laser bar or at least one light emitting diode, f) securing the component on a mounting surface arranged on the second metallic layer, wherein securing the component is carried out after producing the cooler structure and the component covers a plurality of second regions of the second metallic layer.
A method executed by a user equipment, UE, comprising: receiving a paging message from a base station; initiating a Radio Resource Control, RRC, connection establishment procedure or an RRC connection resume procedure based on the paging message; and when initiating the RRC connection establishment procedure or the RRC connection resume procedure, determining whether to perform a downlink early data transmission, EDT, preparation operation based on downlink EDT indication information included in the paging message and based on an establishment cause for initiating the RRC connection establishment procedure or the RRC connection resume procedure, wherein the downlink EDT indication information comprises a downlink EDT UE identity list included in the paging message; and when a UE identity of the UE is included in the downlink EDT UE identity list, the UE performs the downlink EDT preparation operation. receiving a paging message from a base station; initiating a Radio Resource Control, RRC, connection establishment procedure or an RRC connection resume procedure based on the paging message; and when initiating the RRC connection establishment procedure or the RRC connection resume procedure, determining whether to perform a downlink early data transmission, EDT, preparation operation based on downlink EDT indication information included in the paging message and based on an establishment cause for initiating the RRC connection establishment procedure or the RRC connection resume procedure, wherein the downlink EDT indication information comprises a downlink EDT UE identity list included in the paging message; and when a UE identity of the UE is included in the downlink EDT UE identity list, the UE performs the downlink EDT preparation operation.
A method for extruding molten resin in a charging space from a head by converting a rotational motion of an electric motor into a linear motion of a piston disposed in the charging space through a ball screw and thus causing the piston to move vertically, the charging space being a space into which the molten resin can be charged and formed in an accumulator, the head having an extrusion port at a lower end thereof, the method comprising: a step of separating an upper plate from a lower plate and retracting the upper plate upward by a rotational motion of the electric motor and then charging the molten resin into the charging space with a sufficient charging pressure to push up the piston against weights of the lower plate and the piston in the charging space, the lower plate being disposed over the accumulator and coupled to the piston from above, the upper plate being engaged with the electric motor and disposed over the lower plate so as to be able to surface-contact the lower plate; and a step of extruding the molten resin from the extrusion port by moving the upper plate downward with the upper plate and the lower plate surface-contacting each other by a rotational motion of the electric motor and thus moving the piston downward in the charging space. a step of separating an upper plate from a lower plate and retracting the upper plate upward by a rotational motion of the electric motor and then charging the molten resin into the charging space with a sufficient charging pressure to push up the piston against weights of the lower plate and the piston in the charging space, the lower plate being disposed over the accumulator and coupled to the piston from above, the upper plate being engaged with the electric motor and disposed over the lower plate so as to be able to surface-contact the lower plate; and a step of extruding the molten resin from the extrusion port by moving the upper plate downward with the upper plate and the lower plate surface-contacting each other by a rotational motion of the electric motor and thus moving the piston downward in the charging space.
A compound semiconductor device comprising: a first electrode formed on a back surface of a substrate; a compound semiconductor layer (2, 3, 4, 5, 6) which is formed above a front surface of the substrate and includes an opening; a second electrode formed above the compound semiconductor layer (2, 3, 4, 5, 6); and a gate electrode embedded in the opening lined with an insulating film; wherein the compound semiconductor layer (2, 3, 4, 5, 6) comprises: a first GaN layer; a second compound semiconductor layer formed on the first GaN layer; a third GaN layer formed on the second compound semiconductor layer; and a fourth AlGaN layer in contact with a side surface of the insulating film, a side surface of the first GaN layer, a side surface of the second compound semiconductor layer, and a side surface of the third GaN layer; wherein the lattice constant of the second compound semiconductor layer is smaller than the lattice constants of the first GaN layer and the third GaN layer; the lattice constant of the fourth AlGaN layer is smaller than the lattice constants of the first GaN layer and the third GaN layer; a two-dimensional electron gas is produced at an interface of the first GaN layer with the fourth AlGaN layer and at an interface of the third GaN layer with the fourth AlGaN layer; and said second compound semiconductor layer having a multilayer structure and including an AlGaN layer, an AlN layer, and another AlGaN layer, layered in this order. a first electrode formed on a back surface of a substrate; a compound semiconductor layer (2, 3, 4, 5, 6) which is formed above a front surface of the substrate and includes an opening; a second electrode formed above the compound semiconductor layer (2, 3, 4, 5, 6); and a gate electrode embedded in the opening lined with an insulating film; a first GaN layer; a second compound semiconductor layer formed on the first GaN layer; a third GaN layer formed on the second compound semiconductor layer; and a fourth AlGaN layer in contact with a side surface of the insulating film, a side surface of the first GaN layer, a side surface of the second compound semiconductor layer, and a side surface of the third GaN layer; wherein the lattice constant of the second compound semiconductor layer is smaller than the lattice constants of the first GaN layer and the third GaN layer; the lattice constant of the fourth AlGaN layer is smaller than the lattice constants of the first GaN layer and the third GaN layer; a two-dimensional electron gas is produced at an interface of the first GaN layer with the fourth AlGaN layer and at an interface of the third GaN layer with the fourth AlGaN layer; and said second compound semiconductor layer having a multilayer structure and including an AlGaN layer, an AlN layer, and another AlGaN layer, layered in this order.