A stacked memory device, comprising: at least a first memory device die (206.0) and a second memory device die (206.1), the first memory device die being stacked onto the second memory device die in one assembly, each of the first and second memory device dice including at least a first memory bank (212.0, 212.1) and a second memory bank (214.0, 214.1); and at least a first data channel and a second data channel, each of the first and second data channels being selectively coupleable to the first memory bank and the second memory bank included in the first memory device die, and selectively coupleable to the first memory bank and the second memory bank included in the second memory device die, wherein the first and second memory banks included in the first memory device die are each operative to provide data to a first one of the first and second data channels, and the first and second memory banks included in the second memory device die are each operative to provide data to a second one of the first and second data channels, and wherein each of the first and second memory device dice further includes first multiplexing means (224.0, 224.1) and second multiplexing means (226.0, 226.1) for selectively providing data from the first and second memory banks of the respective memory device die to the first or second one of the first and second data channels, the first multiplexing means (224.0) included in the first memory device die being operative to selectively provide the data from the first and second memory banks of the first memory device die to the first one of the first and second data channels, the first multiplexing means (224.1) included in the second memory device die being operative to selectively provide the data from the first and second memory banks of the second memory device die to the second one of the first and second data channels, the second multiplexing means (226.0) included in the first memory device die being operative to selectively provide data from the first and second memory banks of the first memory device die to the second one of the first and second data channels, and the second multiplexing means (226.1) included in the second memory device die being operative to selectively provide data from the first and second memory banks of the second memory device die to the first one of the first and second data channels. at least a first memory device die (206.0) and a second memory device die (206.1), the first memory device die being stacked onto the second memory device die in one assembly, each of the first and second memory device dice including at least a first memory bank (212.0, 212.1) and a second memory bank (214.0, 214.1); and at least a first data channel and a second data channel, each of the first and second data channels being selectively coupleable to the first memory bank and the second memory bank included in the first memory device die, and selectively coupleable to the first memory bank and the second memory bank included in the second memory device die, wherein the first and second memory banks included in the first memory device die are each operative to provide data to a first one of the first and second data channels, and the first and second memory banks included in the second memory device die are each operative to provide data to a second one of the first and second data channels, and wherein each of the first and second memory device dice further includes first multiplexing means (224.0, 224.1) and second multiplexing means (226.0, 226.1) for selectively providing data from the first and second memory banks of the respective memory device die to the first or second one of the first and second data channels, the first multiplexing means (224.0) included in the first memory device die being operative to selectively provide the data from the first and second memory banks of the first memory device die to the first one of the first and second data channels, the first multiplexing means (224.1) included in the second memory device die being operative to selectively provide the data from the first and second memory banks of the second memory device die to the second one of the first and second data channels, the second multiplexing means (226.0) included in the first memory device die being operative to selectively provide data from the first and second memory banks of the first memory device die to the second one of the first and second data channels, and the second multiplexing means (226.1) included in the second memory device die being operative to selectively provide data from the first and second memory banks of the second memory device die to the first one of the first and second data channels.