Method of deposition on a substrate, of at least one metal containing dielectric film comprising a compound of the formula: (M 1 1-a M 2 a) O b N c, wherein: 0 ≤ a < 1, 0 < b ≤ 3, preferably 1.5 ≤ b ≤ 2.5; 0 ≤ c ≤ 1, M 1 represents a metal selected from hafnium (Hf) and zirconium (Zr); and M 2 represents a metal atom selected from magnesium (Mg), calcium (Ca), zinc (Zn), bore, aluminum (Al), indium (In), silicon (Si), germanium (Ge), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), vanadium, niobium (Nb), tantalum (Ta); and the Lanthanides atoms, more particularly scandium (Sc), yttrium and lanthanum (La) and rare-earth metal atoms, which comprises the following steps: - A step a) of providing a substrate into a reaction chamber; - A step (b) of vaporizing at least one M 1 metal containing precursor of the formula (II 1): (R 2 t Cp)M 1 [N(R 39)(R 40)] 3 (II 1) wherein R 39 and R 40, identical or different, independently represent an hydrogen atom, a linear or branched alkyl group having from one to four carbon atoms, an alkylsilyl group, wherein the alkyl group is linear or branched and has from one to four carbon atoms, a dialkylsilyl group, wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms or a trialkylsilyl group wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms; R 2 is selected from the group consisting of the chloro group, the linear or branched, alkyl groups having from one to four carbon atoms, the N-alkyl amino groups, wherein the alkyl group is linear or branched and has from one to four carbon atoms, the N,N - dialkyl amino groups, wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms, the linear or branched alkoxy groups, having from one to four carbon atoms, the alkylsilylamides groups, the amidinates groups and the carbonyl group; 0 ≤ t ≤ 5, preferably t = 1; - Optionally a step b') of vaporizing at least one M 2 metal containing precursor, M 2 being as hereinabove defined; to form an optional second gas phase metal source; - A step c) of introducing said first gas phase metal source and said optional second gas phase metal source, in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula as hereinbefore defined, on said substrate. 0 ≤ a < 1, 0 < b ≤ 3, preferably 1.5 ≤ b ≤ 2.5; 0 ≤ c ≤ 1, M 1 represents a metal selected from hafnium (Hf) and zirconium (Zr); and M 2 represents a metal atom selected from magnesium (Mg), calcium (Ca), zinc (Zn), bore, aluminum (Al), indium (In), silicon (Si), germanium (Ge), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), vanadium, niobium (Nb), tantalum (Ta); and the Lanthanides atoms, more particularly scandium (Sc), yttrium and lanthanum (La) and rare-earth metal atoms, - A step a) of providing a substrate into a reaction chamber; - A step (b) of vaporizing at least one M 1 metal containing precursor of the formula (II 1): (R 2 t Cp)M 1 [N(R 39)(R 40)] 3 (II 1) wherein R 39 and R 40, identical or different, independently represent an hydrogen atom, a linear or branched alkyl group having from one to four carbon atoms, an alkylsilyl group, wherein the alkyl group is linear or branched and has from one to four carbon atoms, a dialkylsilyl group, wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms or a trialkylsilyl group wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms; R 2 is selected from the group consisting of the chloro group, the linear or branched, alkyl groups having from one to four carbon atoms, the N-alkyl amino groups, wherein the alkyl group is linear or branched and has from one to four carbon atoms, the N,N - dialkyl amino groups, wherein each alkyl group, identical or different from the other, is linear or branched and has from one to four carbon atoms, the linear or branched alkoxy groups, having from one to four carbon atoms, the alkylsilylamides groups, the amidinates groups and the carbonyl group; 0 ≤ t ≤ 5, preferably t = 1; - Optionally a step b') of vaporizing at least one M 2 metal containing precursor, M 2 being as hereinabove defined; to form an optional second gas phase metal source; - A step c) of introducing said first gas phase metal source and said optional second gas phase metal source, in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula as hereinbefore defined, on said substrate.