Horological regulator mechanism comprising, arranged to be arranged on a plate, a resonator mechanism having a virtual pivot, about a main axis, and flexure bearing, with a quality factor Q greater than 1,000, and an escapement mechanism which is arranged to be subjected to a torque from drive means comprised in a movement, said resonator mechanism comprising an inertial element arranged to oscillate relative to said plate, said inertial element being subjected to the effect of elastic return means arranged to be directly or indirectly attached to said plate, and said inertial element being arranged to indirectly cooperate with an escape wheel set comprised in said escapement mechanism, said escapement mechanism being free and, during the operating cycle thereof the resonator mechanism having at least one phase of freedom in which it is not in contact with said escapement mechanism, said regulator mechanism comprising at least one pair of components comprising a first component and a second component respectively comprising a first rubbing surface and a second rubbing surface arranged to cooperate in contact with one another, characterised in that a said first component comprises, at said first rubbing surface thereof, silicon carbide which is either stoichiometric silicon carbide SiC, or non-stoichiometric silicon carbide Si x C y H z, where x is equal to 1, y lies in the range 0.8 to 5.0, and z lies in the range 0.00 to 0.70, or even a material comprising at least 90 wt% silicon carbide SiC and at least one other material selected from the following list, the proportions whereof are displayed per weight: alpha-SiC 6H, beta-SiC 3C, SiC 4H, fluorinated SiC, silicon carbonitride SiCN, aluminium at 400 to 2,000 ppm, iron at less than 3,000 ppm, boron and/or boron carbide B 4 C and/or polyphenylic boron and/or decaborane B 10 H 14 and/or carborane B 10 H 12 C 2, the total of the materials containing boron lying in the range 0.04% to 0.14%, carbon at less than 8,000 ppm, vanadium carbide, zirconium carbide, alpha silicon oxynitride: yttrium-doped alpha-SiAlON, graphene, other impurities at less than 500 ppm, and further characterised in that said second component comprises, at said second rubbing surface thereof, at least one silicon-based material selected from a group comprising silicon Si at less than 400 ppm by weight, deoxidised silicon, silicon dioxide SiO 2 at less than 8,000 ppm by weight, amorphous silicon a-Si, polycrystalline silicon p-Si, porous silicon, or a mixture of silicon and silicon oxide, stoichiometric silicon nitride Si 3 N 4, silicon nitride in a so-called non-stoichiometric composition Si x N y H z where x is equal to 1 and y lies in the range 0.8 to 5.0 and z lies in the range 0.00 to 0.70, oxynitrides Si x O y N z; - or the second rubbing surface is the surface of a component that comprises at least one silicon-based material taken, as for the first rubbing surface, from among silicon carbide which is, either stoichiometric silicon carbide SiC, or non-stoichiometric silicon carbide Si x C y H z, where x is equal to 1, y lies in the range 0.8 to 5.0, and z lies in the range 0.00 to 0.70, or even a material comprising at least 90 wt% silicon carbide SiC and at least one other material, selected from the following list, the proportions whereof are displayed per weight: alpha-SiC 6H, beta-SiC 3C, SiC 4H, fluorinated SiC, silicon carbonitride SiCN, aluminium at 400 to 2,000 ppm, iron at less than 3,000 ppm, boron and/or boron carbide B 4 C and/or polyphenylic boron and/or decaborane B 10 H 14 and/or carborane B 10 H 12 C 2, the total of the materials containing boron lying in the range 0.04% to 0.14%, carbon at less than 8,000 ppm, vanadium carbide, zirconium carbide, alpha silicon oxynitride: yttrium-doped alpha-SiAlON, graphene, other impurities at less than 500 ppm. - or the second rubbing surface is the surface of a component that comprises at least one silicon-based material taken, as for the first rubbing surface, from among silicon carbide which is, either stoichiometric silicon carbide SiC, or non-stoichiometric silicon carbide Si x C y H z, where x is equal to 1, y lies in the range 0.8 to 5.0, and z lies in the range 0.00 to 0.70, or even a material comprising at least 90 wt% silicon carbide SiC and at least one other material, selected from the following list, the proportions whereof are displayed per weight: alpha-SiC 6H, beta-SiC 3C, SiC 4H, fluorinated SiC, silicon carbonitride SiCN, aluminium at 400 to 2,000 ppm, iron at less than 3,000 ppm, boron and/or boron carbide B 4 C and/or polyphenylic boron and/or decaborane B 10 H 14 and/or carborane B 10 H 12 C 2, the total of the materials containing boron lying in the range 0.04% to 0.14%, carbon at less than 8,000 ppm, vanadium carbide, zirconium carbide, alpha silicon oxynitride: yttrium-doped alpha-SiAlON, graphene, other impurities at less than 500 ppm.