A pixel circuit comprising: a positive power supply terminal (VDDEL); a ground power supply terminal (VSSEL); a light-emitting diode that is connected between the positive power supply terminal (VDDEL) and the ground power supply terminal (VSSEL); a silicon drive transistor that is connected in series with the light-emitting diode; a first silicon emission transistor that is connected in series with the drive transistor and the light-emitting diode, wherein the first silicon emission transistor is interposed between the light-emitting diode and the silicon drive transistor; a second silicon emission transistor that is interposed between the silicon drive transistor and the positive power supply terminal (VDDEL); a semiconducting-oxide switching transistor that is coupled between a gate (Node2) of the silicon drive transistor and a reference voltage line (Vref), wherein the semiconducting-oxide switching transistor has a gate that receives a first control signal (Scant), and wherein the semiconducting-oxide switching transistor is an n-channel transistor; a silicon switching transistor that is coupled between a source (Node1) of the silicon drive transistor and a data line; a capacitor with a first terminal coupled to the gate (Node2) of the silicon drive transistor and a second terminal coupled to the source (Node1) of the silicon drive transistor; an additional silicon switching transistor that is coupled between an anode (Node4) of the light-emitting diode and the reference voltage line (Vref), wherein the silicon switching transistor has a gate that receives a second control signal (Scan2), wherein the additional silicon switching transistor has a gate that receives the second control signal (Scan2), and wherein the first silicon emission transistor has a gate that receives a third control signal and the second silicon emission transistor has a gate that receives a fourth control signal; and wherein the silicon drive transistor, the first silicon emission transistor, the second silicon emission transistor, the silicon switching transistor, and the additional silicon switching transistor are p-channel transistors. a positive power supply terminal (VDDEL); a ground power supply terminal (VSSEL); a light-emitting diode that is connected between the positive power supply terminal (VDDEL) and the ground power supply terminal (VSSEL); a silicon drive transistor that is connected in series with the light-emitting diode; a first silicon emission transistor that is connected in series with the drive transistor and the light-emitting diode, wherein the first silicon emission transistor is interposed between the light-emitting diode and the silicon drive transistor; a second silicon emission transistor that is interposed between the silicon drive transistor and the positive power supply terminal (VDDEL); a semiconducting-oxide switching transistor that is coupled between a gate (Node2) of the silicon drive transistor and a reference voltage line (Vref), wherein the semiconducting-oxide switching transistor has a gate that receives a first control signal (Scant), and wherein the semiconducting-oxide switching transistor is an n-channel transistor; a silicon switching transistor that is coupled between a source (Node1) of the silicon drive transistor and a data line; a capacitor with a first terminal coupled to the gate (Node2) of the silicon drive transistor and a second terminal coupled to the source (Node1) of the silicon drive transistor; an additional silicon switching transistor that is coupled between an anode (Node4) of the light-emitting diode and the reference voltage line (Vref), wherein the silicon switching transistor has a gate that receives a second control signal (Scan2), wherein the additional silicon switching transistor has a gate that receives the second control signal (Scan2), and wherein the first silicon emission transistor has a gate that receives a third control signal and the second silicon emission transistor has a gate that receives a fourth control signal; and wherein the silicon drive transistor, the first silicon emission transistor, the second silicon emission transistor, the silicon switching transistor, and the additional silicon switching transistor are p-channel transistors.