A manufacturing method of an array substrate, comprising: forming a source-drain metal pattern on a substrate, wherein the substrate comprises a display region and a peripheral region located around the display region, the source-drain metal pattern located on the peripheral region comprises a plurality of metal wires; and forming a protective structure on a lateral side of each of the metal wires, wherein the protective structure contacts and covers the lateral side of each of the metal wires, wherein forming the source-drain metal pattern on the substrate comprises: forming a source-drain metal layer on the substrate; forming a first photoresist on a side of the source-drain metal layer away from the substrate; forming a first photoresist pattern by exposing and developing the first photoresist using a first mask plate; and forming the source-drain metal pattern by taking the first photoresist pattern as a mask to etch the source-drain metal layer; wherein forming the protective structure on the lateral side of each of the metal wires comprises: forming a protective layer covering the source-drain metal pattern on a side of the source-drain metal pattern away from the substrate; and patterning the protective layer by using a second mask plate to remove the protective layer on a side of the metal wires away from the substrate and leave the protective layer on the lateral side of the metal wires to form the protective structure; and wherein the protective layer comprises a second photoresist; and wherein the first photoresist is a negative photoresist, the second photoresist is a positive photoresist, and the second mask plate and the first mask plate are a same mask plate. forming a source-drain metal pattern on a substrate, wherein the substrate comprises a display region and a peripheral region located around the display region, the source-drain metal pattern located on the peripheral region comprises a plurality of metal wires; and forming a protective structure on a lateral side of each of the metal wires, wherein the protective structure contacts and covers the lateral side of each of the metal wires, wherein forming the source-drain metal pattern on the substrate comprises: forming a source-drain metal layer on the substrate; forming a first photoresist on a side of the source-drain metal layer away from the substrate; forming a first photoresist pattern by exposing and developing the first photoresist using a first mask plate; and forming the source-drain metal pattern by taking the first photoresist pattern as a mask to etch the source-drain metal layer; wherein forming the protective structure on the lateral side of each of the metal wires comprises: forming a protective layer covering the source-drain metal pattern on a side of the source-drain metal pattern away from the substrate; and patterning the protective layer by using a second mask plate to remove the protective layer on a side of the metal wires away from the substrate and leave the protective layer on the lateral side of the metal wires to form the protective structure; and wherein the protective layer comprises a second photoresist; and wherein the first photoresist is a negative photoresist, the second photoresist is a positive photoresist, and the second mask plate and the first mask plate are a same mask plate.