A solar cell including: a silicon substrate of an n-type conductivity includes a back surface, which is a light-receiving surface, and a front surface opposite the back surface, each of the back and front surfaces (15, 11) has a texture structure including mountain portions and valley portions; a first amorphous silicon layer of an n-type conductivity provided on the back surface of the silicon substrate; a second amorphous silicon layer of a p-type conductivity provided on the front surface of the silicon substrate, wherein the first amorphous silicon layer includes a substantially intrinsic first amorphous silicon film provided on the back surface of the silicon substrate, and a second amorphous silicon film provided on the first amorphous silicon film, the second amorphous silicon film being of n-type conductivity, the second amorphous silicon layer provided on the front surface includes a substantially intrinsic first amorphous silicon film provided on the front surface of the silicon substrate, and a second amorphous silicon film provided on the first amorphous silicon film, the second amorphous silicon film being of p-type conductivity, the texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other, the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller, each of the amorphous silicon layers (20, 40) on the back and front surfaces (15, 11) of the silicon substrate includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion being thicker than that on a region other than the valley portion, and the thickness of the epitaxial growth area in the amorphous silicon layer on the side of the front surface is smaller than the thickness of the epitaxial growth area in the amorphous silicon layer on the side of the back surface. a silicon substrate of an n-type conductivity includes a back surface, which is a light-receiving surface, and a front surface opposite the back surface, each of the back and front surfaces (15, 11) has a texture structure including mountain portions and valley portions; a first amorphous silicon layer of an n-type conductivity provided on the back surface of the silicon substrate; a second amorphous silicon layer of a p-type conductivity provided on the front surface of the silicon substrate, wherein the first amorphous silicon layer includes a substantially intrinsic first amorphous silicon film provided on the back surface of the silicon substrate, and a second amorphous silicon film provided on the first amorphous silicon film, the second amorphous silicon film being of n-type conductivity, the second amorphous silicon layer provided on the front surface includes a substantially intrinsic first amorphous silicon film provided on the front surface of the silicon substrate, and a second amorphous silicon film provided on the first amorphous silicon film, the second amorphous silicon film being of p-type conductivity, the texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other, the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller, each of the amorphous silicon layers (20, 40) on the back and front surfaces (15, 11) of the silicon substrate includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion being thicker than that on a region other than the valley portion, and the thickness of the epitaxial growth area in the amorphous silicon layer on the side of the front surface is smaller than the thickness of the epitaxial growth area in the amorphous silicon layer on the side of the back surface.