A heating system for heating a heating surface of an object (150, 950) to a processing temperature of at least 100°C, wherein the heating system comprises semiconductor light sources, wherein the heating system is adapted to heat an area element of the heating surface with at least 50 semiconductor light sources at the same time, wherein the light emitted by means of the semiconductor light sources overlaps at the heating surface, wherein the heating system is adapted to heat the heating surface such that a first local temperature of a first part of a processing surface of a wafer deviates less than 0.5% from a second local temperature of a second part of the processing surface of the wafer being different from the first part of the processing surface, wherein the semiconductor light sources are arranged in sub modules, the heating system comprising an electrical driver, and wherein the sub modules and/or the electrical driver are arranged such that the processing surface of the wafer is homogeneously heated to a defined temperature; characterized in that the semiconductor light sources are Vertical Cavity Surface Emitting Lasers, wherein the electrical driver is adapted to drive all semiconductor light sources of one sub module simultaneously; wherein the heating system comprises at least a first group of sub modules with at least one sub module and at least a second group of sub modules with at least one sub module, the first group of sub modules being adapted to heat the whole heating surface and the at least one sub module of the second group of sub modules being adapted to heat a part of the heating surface, and the electrical driver being adapted to drive the at least one sub module of the second group of sub modules independently from the sub module of the first group of sub modules; wherein the second group of sub modules comprises two, three, four or more sub modules, each sub module of the second group of sub modules being adapted to heat the complete heating surface, wherein the sub modules of the second group of sub modules are adapted to provide a different intensity distribution on the heating surface, and wherein the electrical driver is adapted to drive each sub module of the second group of sub modules independently from the other sub modules of the second group of sub modules. wherein the heating system is adapted to heat an area element of the heating surface with at least 50 semiconductor light sources at the same time, wherein the light emitted by means of the semiconductor light sources overlaps at the heating surface, wherein the heating system is adapted to heat the heating surface such that a first local temperature of a first part of a processing surface of a wafer deviates less than 0.5% from a second local temperature of a second part of the processing surface of the wafer being different from the first part of the processing surface, wherein the semiconductor light sources are arranged in sub modules, the heating system comprising an electrical driver, and wherein the sub modules and/or the electrical driver are arranged such that the processing surface of the wafer is homogeneously heated to a defined temperature; characterized in that the semiconductor light sources are Vertical Cavity Surface Emitting Lasers, wherein the electrical driver is adapted to drive all semiconductor light sources of one sub module simultaneously; wherein the heating system comprises at least a first group of sub modules with at least one sub module and at least a second group of sub modules with at least one sub module, the first group of sub modules being adapted to heat the whole heating surface and the at least one sub module of the second group of sub modules being adapted to heat a part of the heating surface, and the electrical driver being adapted to drive the at least one sub module of the second group of sub modules independently from the sub module of the first group of sub modules; wherein the second group of sub modules comprises two, three, four or more sub modules, each sub module of the second group of sub modules being adapted to heat the complete heating surface, wherein the sub modules of the second group of sub modules are adapted to provide a different intensity distribution on the heating surface, and wherein the electrical driver is adapted to drive each sub module of the second group of sub modules independently from the other sub modules of the second group of sub modules.