A thermoelectric module, comprising: a first substrate and a second substrate disposed to face each other; a unit thermoelectric element disposed in an internal area between the first substrate and the second substrate disposed to face each other and including a pair of semiconductor elements (122; 124) electrically connected to each other; and at least two kinds of sealing parts (132; 134) having different thermal conductivities and disposed in the internal area, and wherein the two kinds of sealing parts (132; 134) are composed of an insulator, characterised in that the first substrate has a first Cu layer and a second Cu layer in which a first ceramic substrate layer is interposed between the first Cu layer and the second Cu layer, wherein the second substrate has a third Cu layer and a fourth Cu layer in which a second ceramic substrate layer is interposed between the third Cu layer and the fourth Cu layers, wherein each thickness of the first and second ceramic substrate layers (112a, 112b) ranges from 0.1 to 1 mm, wherein each of the first and fourth Cu layers (114a, 114b) are bounded to external sides of the thermoelectric module and are formed on surfaces of the first and second ceramic substrate layers (112a, 112b) and each thickness of the first and fourth Cu layers (114a, 114b) ranges from 50 to 500 μm, wherein each of the second and third Cu layers (116a, 116b) are bounded to internal sides of the thermoelectric module and electrically connected to the thermoelectric element and formed on surfaces of the first and second ceramic substrate layers (112a, 112b) and each thickness of the second and third layers (116a, 116b) ranges from 0.01 to 0.3 mm. a first substrate and a second substrate disposed to face each other; a unit thermoelectric element disposed in an internal area between the first substrate and the second substrate disposed to face each other and including a pair of semiconductor elements (122; 124) electrically connected to each other; and at least two kinds of sealing parts (132; 134) having different thermal conductivities and disposed in the internal area, and wherein the two kinds of sealing parts (132; 134) are composed of an insulator, characterised in that the first substrate has a first Cu layer and a second Cu layer in which a first ceramic substrate layer is interposed between the first Cu layer and the second Cu layer, wherein the second substrate has a third Cu layer and a fourth Cu layer in which a second ceramic substrate layer is interposed between the third Cu layer and the fourth Cu layers, wherein each thickness of the first and second ceramic substrate layers (112a, 112b) ranges from 0.1 to 1 mm, wherein each of the first and fourth Cu layers (114a, 114b) are bounded to external sides of the thermoelectric module and are formed on surfaces of the first and second ceramic substrate layers (112a, 112b) and each thickness of the first and fourth Cu layers (114a, 114b) ranges from 50 to 500 μm, wherein each of the second and third Cu layers (116a, 116b) are bounded to internal sides of the thermoelectric module and electrically connected to the thermoelectric element and formed on surfaces of the first and second ceramic substrate layers (112a, 112b) and each thickness of the second and third layers (116a, 116b) ranges from 0.01 to 0.3 mm.