A packaged radiofrequency, RF, power amplifier, comprising: a package having an output lead; an active die arranged inside the package and on which a RF power transistor is arranged, said RF power transistor having an output and an associated output capacitance (Cds); a passive semiconductor die (100; 200; 300) arranged in between the output lead and the active die; an output network arranged inside the package and comprising: a first capacitor having a first capacitance and being provided with a first terminal and a grounded second terminal, said first capacitor being integrated on the passive semiconductor die; a second capacitor having a second capacitance and being provided with a third terminal and a grounded fourth terminal, wherein the second capacitance is substantially larger than the first capacitance; a first inductor comprising one or more first bondwires extending in a first direction from the output of the RF power transistor to the output lead; and a second inductor comprising one or more second bondwires extending from the output of the RF power transistor to the first terminal, wherein the second capacitor is integrated on the passive semiconductor die, characterized in that the output network further comprises an even number of third bondwires connected in between the first terminal and the third terminal and forming a third inductor, wherein one half of the even number of third bondwires forms a first part (L3_1) of the third inductor and wherein an other half of the even number of third bondwires forms a second part (L3_2) of the third inductor that is connected in series with the first part, wherein the first part extends at least partially along the first direction, wherein the second part extends at least partially in a direction opposite to the first direction such that the mutual inductance between the first and the third inductor is minimized; and in that a network formed by the second inductor, the third inductor, the first capacitor, and the second capacitor is configured to resonate with the associated output capacitance at or close to an operational frequency of the RF power amplifier at which frequency the network will act as a shunt inductor that displays a parallel resonance with the associated output capacitance, said shunt inductor being largely determined by the second inductor. a package having an output lead; an active die arranged inside the package and on which a RF power transistor is arranged, said RF power transistor having an output and an associated output capacitance (Cds); a passive semiconductor die (100; 200; 300) arranged in between the output lead and the active die; an output network arranged inside the package and comprising: a first capacitor having a first capacitance and being provided with a first terminal and a grounded second terminal, said first capacitor being integrated on the passive semiconductor die; a second capacitor having a second capacitance and being provided with a third terminal and a grounded fourth terminal, wherein the second capacitance is substantially larger than the first capacitance; a first inductor comprising one or more first bondwires extending in a first direction from the output of the RF power transistor to the output lead; and a second inductor comprising one or more second bondwires extending from the output of the RF power transistor to the first terminal, a first capacitor having a first capacitance and being provided with a first terminal and a grounded second terminal, said first capacitor being integrated on the passive semiconductor die; a second capacitor having a second capacitance and being provided with a third terminal and a grounded fourth terminal, wherein the second capacitance is substantially larger than the first capacitance; a first inductor comprising one or more first bondwires extending in a first direction from the output of the RF power transistor to the output lead; and a second inductor comprising one or more second bondwires extending from the output of the RF power transistor to the first terminal, wherein the second capacitor is integrated on the passive semiconductor die, characterized in that the output network further comprises an even number of third bondwires connected in between the first terminal and the third terminal and forming a third inductor, wherein one half of the even number of third bondwires forms a first part (L3_1) of the third inductor and wherein an other half of the even number of third bondwires forms a second part (L3_2) of the third inductor that is connected in series with the first part, wherein the first part extends at least partially along the first direction, wherein the second part extends at least partially in a direction opposite to the first direction such that the mutual inductance between the first and the third inductor is minimized; and in that a network formed by the second inductor, the third inductor, the first capacitor, and the second capacitor is configured to resonate with the associated output capacitance at or close to an operational frequency of the RF power amplifier at which frequency the network will act as a shunt inductor that displays a parallel resonance with the associated output capacitance, said shunt inductor being largely determined by the second inductor.