A display device comprising: a display substrate; a light emitting element layer disposed on a surface of the display substrate and including display pixels (PXa); a light receiver having a surface attached to another surface of the display substrate, the light receiver comprising: sensing pixels (PXb) in one absorption area (SA_1); a semiconductor sensing substrate (601_1) in which light sensing elements (1550B, 1550R), a transfer transistor and a charge storage are integrated, wherein: the light sensing elements (1550B, 1550R), the transfer transistor and/or the charge storage are integrated in each sensing pixel (PXb); an insulation layer; and a photoelectric element formed on the insulation layer including a first electrode, an active layer and a second electrode, wherein: the first electrode and the second electrode are transparent electrodes; the active layer selectively absorbs and/or senses light in a green wavelength range such that light incident from a position of the second electrode is photoelectrically converted by absorbing light in the green wavelength range in the active layer, and light in another wavelength range may pass through the first electrode to be sensed by the light sensing elements (1550B, 1550R); and the charge storage is electrically connected to the photoelectric element, and the transfer transistor is configured to transfer information in the charge storage to the photoelectric element. a display substrate; a light emitting element layer disposed on a surface of the display substrate and including display pixels (PXa); a light receiver having a surface attached to another surface of the display substrate, the light receiver comprising: sensing pixels (PXb) in one absorption area (SA_1); a semiconductor sensing substrate (601_1) in which light sensing elements (1550B, 1550R), a transfer transistor and a charge storage are integrated, wherein: the light sensing elements (1550B, 1550R), the transfer transistor and/or the charge storage are integrated in each sensing pixel (PXb); an insulation layer; and a photoelectric element formed on the insulation layer including a first electrode, an active layer and a second electrode, wherein: the first electrode and the second electrode are transparent electrodes; the active layer selectively absorbs and/or senses light in a green wavelength range such that light incident from a position of the second electrode is photoelectrically converted by absorbing light in the green wavelength range in the active layer, and light in another wavelength range may pass through the first electrode to be sensed by the light sensing elements (1550B, 1550R); and the charge storage is electrically connected to the photoelectric element, and the transfer transistor is configured to transfer information in the charge storage to the photoelectric element. sensing pixels (PXb) in one absorption area (SA_1); a semiconductor sensing substrate (601_1) in which light sensing elements (1550B, 1550R), a transfer transistor and a charge storage are integrated, wherein: the light sensing elements (1550B, 1550R), the transfer transistor and/or the charge storage are integrated in each sensing pixel (PXb); an insulation layer; and a photoelectric element formed on the insulation layer including a first electrode, an active layer and a second electrode, wherein: the first electrode and the second electrode are transparent electrodes; the active layer selectively absorbs and/or senses light in a green wavelength range such that light incident from a position of the second electrode is photoelectrically converted by absorbing light in the green wavelength range in the active layer, and light in another wavelength range may pass through the first electrode to be sensed by the light sensing elements (1550B, 1550R); and the charge storage is electrically connected to the photoelectric element, and the transfer transistor is configured to transfer information in the charge storage to the photoelectric element. the first electrode and the second electrode are transparent electrodes; the active layer selectively absorbs and/or senses light in a green wavelength range such that light incident from a position of the second electrode is photoelectrically converted by absorbing light in the green wavelength range in the active layer, and light in another wavelength range may pass through the first electrode to be sensed by the light sensing elements (1550B, 1550R); and the charge storage is electrically connected to the photoelectric element, and the transfer transistor is configured to transfer information in the charge storage to the photoelectric element.