An OLED structure, comprising: a layer stack comprising a base electrode, an organic layer assembly, a cover electrode, an insulation layer and a contact layer, wherein the organic layer assembly is arranged between the base electrode and the cover electrode and the cover electrode is arranged between the organic layer assembly and the contact layer, and wherein the cover electrode and the base electrode are structured to form several laterally adjacent optically active areas and the base electrode, the organic layer assembly, the cover electrode and the contact layer are interconnected by vias (170, 171) such that at least two optically active areas (210a, 210b) are connected in series such that a current flow through the at least two optically active areas (210a, 210b) is directed into a direction between the base electrode and the cover electrode, wherein a first optically active area is formed by a first part of the base electrode and a first part of the cover electrode which contact the organic layer assembly on both sides and a second optically active area is formed by a second part of the base electrode and a second part of the cover electrode which contact the organic layer assembly on both sides, wherein a lateral distance exists between the first optically active area and the second optically active area, the contact layer contacts the base layer through one of the vias laterally in an interior of the second optically active area (210a, 210b), wherein the insulation layer is partially arranged between the contact layer and the cover electrode, so that within the second optically active area the respective contact layer is electrically insulated from the respective cover electrode, wherein the contact layer is structured such that a first part and a second part are formed, characterized in that the current flow between the at least two optically active areas (210a, 210b) passes through the contact layer, and in that the organic layer assembly comprises complementarily doped organic layers forming a pn junction. a layer stack comprising a base electrode, an organic layer assembly, a cover electrode, an insulation layer and a contact layer, wherein the organic layer assembly is arranged between the base electrode and the cover electrode and the cover electrode is arranged between the organic layer assembly and the contact layer, and wherein the cover electrode and the base electrode are structured to form several laterally adjacent optically active areas and the base electrode, the organic layer assembly, the cover electrode and the contact layer are interconnected by vias (170, 171) such that at least two optically active areas (210a, 210b) are connected in series such that a current flow through the at least two optically active areas (210a, 210b) is directed into a direction between the base electrode and the cover electrode, wherein a first optically active area is formed by a first part of the base electrode and a first part of the cover electrode which contact the organic layer assembly on both sides and a second optically active area is formed by a second part of the base electrode and a second part of the cover electrode which contact the organic layer assembly on both sides, wherein a lateral distance exists between the first optically active area and the second optically active area, the contact layer contacts the base layer through one of the vias laterally in an interior of the second optically active area (210a, 210b), wherein the insulation layer is partially arranged between the contact layer and the cover electrode, so that within the second optically active area the respective contact layer is electrically insulated from the respective cover electrode, wherein the contact layer is structured such that a first part and a second part are formed, characterized in that the current flow between the at least two optically active areas (210a, 210b) passes through the contact layer, and in that the organic layer assembly comprises complementarily doped organic layers forming a pn junction.