A fabricating method of a solar cell, the method comprising: forming a second conductive-type semiconductor layer by doping a first conductivity-type semiconductor substrate with a second conductivity-type impurity having a conductivity opposite to that of the first conductivity-type semiconductor substrate; forming an anti-reflection film on the second conductive-type semiconductor layer; forming at least one opening exposing a region of a front surface of the second conductive-type semiconductor layer by etching the anti-reflection film; forming at least one front electrode on the region of the surface of the second conductivity-type semiconductor layer exposed through the at least one opening; and forming at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate, wherein the forming of the at least one front electrode is achieved by applying an electrode paste in the at least one opening using a screen printing method or a direct printing method and performing heat treatment, and the electrode paste includes a metal containing silver (Ag) or a metal alloy containing silver (Ag), lead-free glass frit, and a resin binding agent dispersed in an organic medium, and wherein the front surface of the second conductivity-type semiconductor layer has an uneven structure including prominences and depressions, and the prominences and depressions in the region of the front surface in which the at least one front electrode is formed have a smaller size than the prominences and depressions in other regions of the front surface in which the at least one front electrode is not formed, wherein the at least one front electrode includes, with respect to a total wt% of metal components of the at least one front electrode, 50∼85wt% of silver (Ag) or an alloy containing silver (Ag), and 0.2∼5wt% of at least one element selected from the group consisting of zinc (Zn), silicon (Si), aluminum (Al), copper (Cu), manganese (Mn), bismuth (Bi), phosphorus, boron, barium (Ba), and palladium (Pd), and wherein the second conductivity-type semiconductor layer is an n + -type emitter doped with an n-type impurity; and the n + -type emitter has sheet resistance of 30∼100Ω/square. forming a second conductive-type semiconductor layer by doping a first conductivity-type semiconductor substrate with a second conductivity-type impurity having a conductivity opposite to that of the first conductivity-type semiconductor substrate; forming an anti-reflection film on the second conductive-type semiconductor layer; forming at least one opening exposing a region of a front surface of the second conductive-type semiconductor layer by etching the anti-reflection film; forming at least one front electrode on the region of the surface of the second conductivity-type semiconductor layer exposed through the at least one opening; and forming at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate, wherein the forming of the at least one front electrode is achieved by applying an electrode paste in the at least one opening using a screen printing method or a direct printing method and performing heat treatment, and the electrode paste includes a metal containing silver (Ag) or a metal alloy containing silver (Ag), lead-free glass frit, and a resin binding agent dispersed in an organic medium, and wherein the front surface of the second conductivity-type semiconductor layer has an uneven structure including prominences and depressions, and the prominences and depressions in the region of the front surface in which the at least one front electrode is formed have a smaller size than the prominences and depressions in other regions of the front surface in which the at least one front electrode is not formed, wherein the at least one front electrode includes, with respect to a total wt% of metal components of the at least one front electrode, 50∼85wt% of silver (Ag) or an alloy containing silver (Ag), and 0.2∼5wt% of at least one element selected from the group consisting of zinc (Zn), silicon (Si), aluminum (Al), copper (Cu), manganese (Mn), bismuth (Bi), phosphorus, boron, barium (Ba), and palladium (Pd), and wherein the second conductivity-type semiconductor layer is an n + -type emitter doped with an n-type impurity; and the n + -type emitter has sheet resistance of 30∼100Ω/square.