An integrated circuit, comprising: a serializer; a pre-driver coupled to receive a differential input comprising a first and a second input from the serializer, wherein the pre-driver comprises: an all-p-type metal-oxide-silicon, PMOS, cross-coupled level converter comprising four PMOS transistors (410A-D); and a first and a second de-emphasis PMOS transistors (415A, 415B) forming a de-emphasis tap coupled to a first and a second output of the cross-coupled level converter, respectively; and a driver coupled to the pre-driver output and configured to receive a differential input from the pre-driver; wherein the cross-coupled level converter comprising a first, a second, a third and a fourth PMOS transistor, each having a gate, a drain and a source, wherein the drain of the first PMOS transistor is coupled to the source of the third PMOS transistor forming the first output, the drain of the second PMOS transistor is coupled to the source of the fourth PMOS transistor forming the second output, the gate of first and the fourth PMOS transistors are coupled together forming the first input, the gate of second and the third PMOS transistors are coupled together forming the second input; wherein the first and the second de-emphasis PMOS transistors (415A, 415B) having each a drain, a gate and a source; and wherein the drain of the first de-emphasis PMOS transistor is coupled to the first output, the drain of the second de-emphasis PMOS transistor is coupled to the second output; the gate of the first de-emphasis PMOS transistor is coupled to a signal having a one-bit delay to the second input, and the gate of the second de-emphasis PMOS transistor is coupled to a signal having a one-bit delay to the first input. a serializer; a pre-driver coupled to receive a differential input comprising a first and a second input from the serializer, wherein the pre-driver comprises: an all-p-type metal-oxide-silicon, PMOS, cross-coupled level converter comprising four PMOS transistors (410A-D); and a first and a second de-emphasis PMOS transistors (415A, 415B) forming a de-emphasis tap coupled to a first and a second output of the cross-coupled level converter, respectively; and an all-p-type metal-oxide-silicon, PMOS, cross-coupled level converter comprising four PMOS transistors (410A-D); and a first and a second de-emphasis PMOS transistors (415A, 415B) forming a de-emphasis tap coupled to a first and a second output of the cross-coupled level converter, respectively; and a driver coupled to the pre-driver output and configured to receive a differential input from the pre-driver; wherein the cross-coupled level converter comprising a first, a second, a third and a fourth PMOS transistor, each having a gate, a drain and a source, wherein the drain of the first PMOS transistor is coupled to the source of the third PMOS transistor forming the first output, the drain of the second PMOS transistor is coupled to the source of the fourth PMOS transistor forming the second output, the gate of first and the fourth PMOS transistors are coupled together forming the first input, the gate of second and the third PMOS transistors are coupled together forming the second input; wherein the first and the second de-emphasis PMOS transistors (415A, 415B) having each a drain, a gate and a source; and wherein the drain of the first de-emphasis PMOS transistor is coupled to the first output, the drain of the second de-emphasis PMOS transistor is coupled to the second output; the gate of the first de-emphasis PMOS transistor is coupled to a signal having a one-bit delay to the second input, and the gate of the second de-emphasis PMOS transistor is coupled to a signal having a one-bit delay to the first input.