A light emitting device comprising: a semiconductor light emitting element comprising: a semiconductor stacked layer body including a p-type semiconductor layer and an n-type semiconductor layer, a p-side electrode electrically connected to the p-type semiconductor layer and an n-side electrode electrically connected to the n-type semiconductor layer which are disposed at one surface side of a surface side of the semiconductor stacked layer body with the p-type semiconductor layer or a surface side of the semiconductor stacked layer body with the n-type semiconductor layer; a resin layer disposed on the one surface side of the semiconductor stacked layer body; an electrode for p-side external connection disposed exposed on a surface of the resin layer; an electrode for n-side external connection disposed exposed on a surface of the resin layer; a p-side inner conductive member disposed in the resin layer and electrically connecting the p-side electrode and the electrode for p-side external connection, the p-side inner conductive member including a first metal plated layer; and an n-side inner conductive member disposed in the resin layer and electrically connecting the n-side electrode and the electrode for n-side external connection, the n-side inner conductive member including a first metal plated layer; and characterized in that the p-side inner conductive member further includes a first metal wire; the n-side inner conductive member further includes a first metal wire; and at least one of the first metal wire of the p-side inner conductive member and the first metal wire of the n-side inner conductive member is arranged in a curved state. a semiconductor stacked layer body including a p-type semiconductor layer and an n-type semiconductor layer, a p-side electrode electrically connected to the p-type semiconductor layer and an n-side electrode electrically connected to the n-type semiconductor layer which are disposed at one surface side of a surface side of the semiconductor stacked layer body with the p-type semiconductor layer or a surface side of the semiconductor stacked layer body with the n-type semiconductor layer; a resin layer disposed on the one surface side of the semiconductor stacked layer body; an electrode for p-side external connection disposed exposed on a surface of the resin layer; an electrode for n-side external connection disposed exposed on a surface of the resin layer; a p-side inner conductive member disposed in the resin layer and electrically connecting the p-side electrode and the electrode for p-side external connection, the p-side inner conductive member including a first metal plated layer; and an n-side inner conductive member disposed in the resin layer and electrically connecting the n-side electrode and the electrode for n-side external connection, the n-side inner conductive member including a first metal plated layer; and characterized in that the p-side inner conductive member further includes a first metal wire; the n-side inner conductive member further includes a first metal wire; and at least one of the first metal wire of the p-side inner conductive member and the first metal wire of the n-side inner conductive member is arranged in a curved state.