A semiconductor structure, comprising: a substrate; a capacitor formed on the substrate, the capacitor comprising: a metal structure disposed over a portion of the substrate; a dielectric layer disposed over the substrate and the metal structure such that the top and sides of the metal structure are in contact with the dielectric layer; the metal structure comprising: a laminated structure comprising: a first metal layer comprising a first metal in a group consisting of gold, silver, copper and aluminum; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer comprising a second metal of one of the refractory metals: titanium, tungsten, molybdenum, and chromium a third metal layer disposed on, and in contact with the second metal layer, the third metal layer comprising the first metal; further alternate metal layers of the second metal and first metal, wherein the layers of the second metal are thin compared to the layers of the first metal; wherein the first metal layer of the laminated structure is disposed on the lower layer; and an additional metal disposed on the dielectric layer. a substrate; a capacitor formed on the substrate, the capacitor comprising: a metal structure disposed over a portion of the substrate; a dielectric layer disposed over the substrate and the metal structure such that the top and sides of the metal structure are in contact with the dielectric layer; the metal structure comprising: a laminated structure comprising: a first metal layer comprising a first metal in a group consisting of gold, silver, copper and aluminum; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer comprising a second metal of one of the refractory metals: titanium, tungsten, molybdenum, and chromium a third metal layer disposed on, and in contact with the second metal layer, the third metal layer comprising the first metal; further alternate metal layers of the second metal and first metal, wherein the layers of the second metal are thin compared to the layers of the first metal; wherein the first metal layer of the laminated structure is disposed on the lower layer; and an additional metal disposed on the dielectric layer. a metal structure disposed over a portion of the substrate; a dielectric layer disposed over the substrate and the metal structure such that the top and sides of the metal structure are in contact with the dielectric layer; the metal structure comprising: a laminated structure comprising: a first metal layer comprising a first metal in a group consisting of gold, silver, copper and aluminum; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer comprising a second metal of one of the refractory metals: titanium, tungsten, molybdenum, and chromium a third metal layer disposed on, and in contact with the second metal layer, the third metal layer comprising the first metal; further alternate metal layers of the second metal and first metal, wherein the layers of the second metal are thin compared to the layers of the first metal; wherein the first metal layer of the laminated structure is disposed on the lower layer; and a first metal layer comprising a first metal in a group consisting of gold, silver, copper and aluminum; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer comprising a second metal of one of the refractory metals: titanium, tungsten, molybdenum, and chromium a third metal layer disposed on, and in contact with the second metal layer, the third metal layer comprising the first metal; further alternate metal layers of the second metal and first metal, wherein the layers of the second metal are thin compared to the layers of the first metal; wherein the first metal layer of the laminated structure is disposed on the lower layer; and an additional metal disposed on the dielectric layer.