A semiconductor die, comprising: a semiconductor device comprising a first layer (36, 38) of a first doping type, a second layer of a second doping type provided on the first layer, and an edge termination structure formed in the second layer around a periphery of a main junction of the semiconductor device in an edge termination region, the edge termination structure having a desired dose profile from an edge of the main junction of the semiconductor device to an edge of the edge termination region and comprising: one or more negative steps in the second layer that define at least two concentric starting zones (ZONE 1 - ZONE 7) within the edge termination region, wherein, when moving from the main junction towards the edge of the edge termination region, the one or more negative steps are steps downward towards the first layer; the semiconductor die being characterized in that each zone of the at least two concentric starting zones comprises at least two negative features in the zone that vary the dose within the zone according to the desired dose profile, wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two trenches forming concentric rings around the periphery of the main junction and having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region. a semiconductor device comprising a first layer (36, 38) of a first doping type, a second layer of a second doping type provided on the first layer, and an edge termination structure formed in the second layer around a periphery of a main junction of the semiconductor device in an edge termination region, the edge termination structure having a desired dose profile from an edge of the main junction of the semiconductor device to an edge of the edge termination region and comprising: one or more negative steps in the second layer that define at least two concentric starting zones (ZONE 1 - ZONE 7) within the edge termination region, wherein, when moving from the main junction towards the edge of the edge termination region, the one or more negative steps are steps downward towards the first layer; the semiconductor die being characterized in that each zone of the at least two concentric starting zones comprises at least two negative features in the zone that vary the dose within the zone according to the desired dose profile, wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two trenches forming concentric rings around the periphery of the main junction and having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region. one or more negative steps in the second layer that define at least two concentric starting zones (ZONE 1 - ZONE 7) within the edge termination region, wherein, when moving from the main junction towards the edge of the edge termination region, the one or more negative steps are steps downward towards the first layer; the semiconductor die being characterized in that each zone of the at least two concentric starting zones comprises at least two negative features in the zone that vary the dose within the zone according to the desired dose profile, wherein, for at least one zone of the at least two concentric starting zones, the at least two negative features in the at least one zone comprise at least two trenches forming concentric rings around the periphery of the main junction and having increasing widths to thereby provide a decreasing dose moving laterally away from the edge of the main junction of the semiconductor device toward the edge of the edge termination region.