A 3-way Doherty amplifier, comprising: a main stage comprising a main stage transistor; a first peak stage comprising a first peak stage transistor; a second peak stage comprising a second peak stage transistor; an input network having an input for receiving an RF signal to be amplified; and an output network having an output, and configured for combining amplified RF signals outputted by the main stage, the first peak stage, and the second peak stage, and for outputting the combined amplified RF signals at the output; said input network comprising a splitter that splits the received RF signal over three input branches, wherein a first input branch among said three input branches extends between the input and an input of the main stage, wherein a second input branch among said three input branches extends between the input and an input of the first peak stage, and wherein a third input branch among said three input branches extends between the input and an input of the second peak stage, said second input branch comprising a first impedance provided by a first pi-network formed by a parasitic gate-source capacitance of the main stage transistor, a parasitic gate-source capacitance of the first peak stage transistor, and a phase shifting capacitor connected between the splitter and the gate of the first peak stage transistor for providing a -90° phase shift and said third input branch comprising a second impedance provided by a second pi-network formed by the parasitic gate-source capacitance of the main stage transistor, a parasitic gate-source capacitance of the second peak stage transistor, a phase shifting inductor connected via a DC blocking capacitor between the splitter and the gate of the second peak stage transistor for providing a 90° phase shift; said output network comprises three output branches for receiving amplified RF signals from the main stage, the first peak stage, and the second peak stage, respectively, a first output branch among said three output branches extending between the output and an output of the main stage, a second output branch among said three output branches extending between the output and an output of the first peak stage, and a third output branch among said three output branches extending between the output and an output of the second peak stage; wherein said second output branch provides a 180° phase shift via a third impedance, and wherein said first output branch provides a 90° phase shift via a fourth impedance, and wherein the 3-way Doherty amplifier is integrated on a single semiconductor die wherein the main stage transistor is located between the first peak stage transistor and the second peak stage transistor. a main stage comprising a main stage transistor; a first peak stage comprising a first peak stage transistor; a second peak stage comprising a second peak stage transistor; an input network having an input for receiving an RF signal to be amplified; and an output network having an output, and configured for combining amplified RF signals outputted by the main stage, the first peak stage, and the second peak stage, and for outputting the combined amplified RF signals at the output; said input network comprising a splitter that splits the received RF signal over three input branches, wherein a first input branch among said three input branches extends between the input and an input of the main stage, wherein a second input branch among said three input branches extends between the input and an input of the first peak stage, and wherein a third input branch among said three input branches extends between the input and an input of the second peak stage, said second input branch comprising a first impedance provided by a first pi-network formed by a parasitic gate-source capacitance of the main stage transistor, a parasitic gate-source capacitance of the first peak stage transistor, and a phase shifting capacitor connected between the splitter and the gate of the first peak stage transistor for providing a -90° phase shift and said third input branch comprising a second impedance provided by a second pi-network formed by the parasitic gate-source capacitance of the main stage transistor, a parasitic gate-source capacitance of the second peak stage transistor, a phase shifting inductor connected via a DC blocking capacitor between the splitter and the gate of the second peak stage transistor for providing a 90° phase shift; said output network comprises three output branches for receiving amplified RF signals from the main stage, the first peak stage, and the second peak stage, respectively, a first output branch among said three output branches extending between the output and an output of the main stage, a second output branch among said three output branches extending between the output and an output of the first peak stage, and a third output branch among said three output branches extending between the output and an output of the second peak stage; wherein said second output branch provides a 180° phase shift via a third impedance, and wherein said first output branch provides a 90° phase shift via a fourth impedance, and wherein the 3-way Doherty amplifier is integrated on a single semiconductor die wherein the main stage transistor is located between the first peak stage transistor and the second peak stage transistor.