A semiconductor device with a semiconductor body, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, wherein - the semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction; - the first semiconductor layer is more heavily doped than the second semiconductor layer; - a side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction; - the side surface of the semiconductor body comprises a first partial region and a second partial region; - the first partial region and the second partial region delimit the first semiconductor layer in regions; - the first partial region delimits the first pn junction in the lateral direction; - the second partial region is spaced apart from the first pn junction in the vertical direction; and - the first partial region is arranged at a first angle (α) and the second partial region is arranged at a second angle (β) with respect to the first pn junction wherein the first angle (α) is larger than the second angle (β); - the side surface comprises a third partial region, the first partial region being arranged between the second partial region and the third partial region, the third partial region directly adjoining the first partial region; - the semiconductor body further comprises a second pn junction, the third partial region delimiting the second pn junction in the lateral direction; and - the third partial region is arranged at a third angle (γ) with respect to the first pn junction, wherein the third angle (γ) is larger than the first angle (α); and - the third angle (γ) is between 20° and 60° inclusive; and the first angle (α) is constant within the first partial region, the second angle (β) is constant within the second partial region and the third angle (γ) is constant within the third partial region. - the semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction; - the first semiconductor layer is more heavily doped than the second semiconductor layer; - a side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction; - the side surface of the semiconductor body comprises a first partial region and a second partial region; - the first partial region and the second partial region delimit the first semiconductor layer in regions; - the first partial region delimits the first pn junction in the lateral direction; - the second partial region is spaced apart from the first pn junction in the vertical direction; and - the first partial region is arranged at a first angle (α) and the second partial region is arranged at a second angle (β) with respect to the first pn junction wherein the first angle (α) is larger than the second angle (β); - the side surface comprises a third partial region, the first partial region being arranged between the second partial region and the third partial region, the third partial region directly adjoining the first partial region; - the semiconductor body further comprises a second pn junction, the third partial region delimiting the second pn junction in the lateral direction; and - the third partial region is arranged at a third angle (γ) with respect to the first pn junction, wherein the third angle (γ) is larger than the first angle (α); and - the third angle (γ) is between 20° and 60° inclusive; and