A silicon single crystal fabrication method using a silicon single crystal fabrication device, the silicon single crystal fabrication device comprising: a cylindrical-shaped chamber having a supply port for supplying an inert gas thereto; a crucible provided in the chamber, the crucible comprising a quartz-glass crucible at its inner side and a graphite crucible at its outer side; an ascend/descend portion configured to ascend/descend a height of the crucible; a control portion configured to control the ascend/descend portion; a carbon heater for melting a raw-material silicon charged in the crucible; an inner tube provided around an outer periphery of the carbon heater; an outer tube provided around an outer periphery of the inner tube; a first heat-reserving plate extending inward at an upper end portion of the inner tube; a second heat-reserving plate extending inward at an upper end portion of the outer tube; a radiant shield which is provided above and near the crucible and is provided, at its upper and lower portions, with an opening surrounding a periphery of a silicon single crystal; and an exhaust flow path formed by a first exhaust flow path formed by the radiant shield and an inner peripheral surface of the crucible, a second exhaust flow path formed by the first heat-reserving plate and the second heat-reserving plate, and a third exhaust flow path formed by the inner tube and the outer tube, wherein a position of an upper end of the graphite crucible is controlled to be equal to or more than 5 mm but equal to or less than 95 mm above an upper end of the heater, during melting of the raw material before start of pulling up of the silicon single crystal, and a position of the crucible is controlled, such that an exhaust cross-sectional area of a gap between a lower end of the radiant shield and a surface of the melt, in the first exhaust flow path, is smaller than an exhaust cross-sectional area of the third exhaust flow path formed by the inner tube and the outer tube, until completion of pulling up of the silicon single crystal since completion of the melting of the raw material. a cylindrical-shaped chamber having a supply port for supplying an inert gas thereto; a crucible provided in the chamber, the crucible comprising a quartz-glass crucible at its inner side and a graphite crucible at its outer side; an ascend/descend portion configured to ascend/descend a height of the crucible; a control portion configured to control the ascend/descend portion; a carbon heater for melting a raw-material silicon charged in the crucible; an inner tube provided around an outer periphery of the carbon heater; an outer tube provided around an outer periphery of the inner tube; a first heat-reserving plate extending inward at an upper end portion of the inner tube; a second heat-reserving plate extending inward at an upper end portion of the outer tube; a radiant shield which is provided above and near the crucible and is provided, at its upper and lower portions, with an opening surrounding a periphery of a silicon single crystal; and an exhaust flow path formed by a first exhaust flow path formed by the radiant shield and an inner peripheral surface of the crucible, a second exhaust flow path formed by the first heat-reserving plate and the second heat-reserving plate, and a third exhaust flow path formed by the inner tube and the outer tube, wherein a position of an upper end of the graphite crucible is controlled to be equal to or more than 5 mm but equal to or less than 95 mm above an upper end of the heater, during melting of the raw material before start of pulling up of the silicon single crystal, and a position of the crucible is controlled, such that an exhaust cross-sectional area of a gap between a lower end of the radiant shield and a surface of the melt, in the first exhaust flow path, is smaller than an exhaust cross-sectional area of the third exhaust flow path formed by the inner tube and the outer tube, until completion of pulling up of the silicon single crystal since completion of the melting of the raw material.