A dual band infrared and ultraviolet radiation detector, comprising: an infrared radiation detector; an infrared radiation filter (204, 12), disposed over infrared radiation detector, the infrared radiation filter (204, 12) being transparent to infrared radiation band and absorptive to radiation adjacent to the infrared radiation band; and an ultraviolet radiation detector (206, 10) disposed over the infrared radiation filter (204, 12), the ultraviolet radiation detector (206, 10) comprising: a Schottky contact metal layer (208, 16) on an upper surface of the infrared radiation filter (204, 12); a layer (210, 18) of vapor deposited semiconductor, ultraviolet radiation detector material disposed directly on, and forming a Schottky contact with, the Schottky contact metal layer (208, 16); and an ohmic contact metal (212, 20) in ohmic contact with a portion of the layer (210, 18) of the semiconductor, ultraviolet radiation detector material; wherein radiation in both the infrared band and in the ultraviolet band passes to the ultraviolet radiation detector (206, 10); wherein the ultraviolet radiation is intercepted and detected by the ultraviolet radiation detector (206, 10) and infrared radiation passes through the ultraviolet radiation detector (206, 10) and is intercepted and detected by the infrared radiation detector. an infrared radiation detector; an infrared radiation filter (204, 12), disposed over infrared radiation detector, the infrared radiation filter (204, 12) being transparent to infrared radiation band and absorptive to radiation adjacent to the infrared radiation band; and an ultraviolet radiation detector (206, 10) disposed over the infrared radiation filter (204, 12), the ultraviolet radiation detector (206, 10) comprising: a Schottky contact metal layer (208, 16) on an upper surface of the infrared radiation filter (204, 12); a layer (210, 18) of vapor deposited semiconductor, ultraviolet radiation detector material disposed directly on, and forming a Schottky contact with, the Schottky contact metal layer (208, 16); and an ohmic contact metal (212, 20) in ohmic contact with a portion of the layer (210, 18) of the semiconductor, ultraviolet radiation detector material; wherein radiation in both the infrared band and in the ultraviolet band passes to the ultraviolet radiation detector (206, 10); wherein the ultraviolet radiation is intercepted and detected by the ultraviolet radiation detector (206, 10) and infrared radiation passes through the ultraviolet radiation detector (206, 10) and is intercepted and detected by the infrared radiation detector. a Schottky contact metal layer (208, 16) on an upper surface of the infrared radiation filter (204, 12); a layer (210, 18) of vapor deposited semiconductor, ultraviolet radiation detector material disposed directly on, and forming a Schottky contact with, the Schottky contact metal layer (208, 16); and an ohmic contact metal (212, 20) in ohmic contact with a portion of the layer (210, 18) of the semiconductor, ultraviolet radiation detector material; wherein radiation in both the infrared band and in the ultraviolet band passes to the ultraviolet radiation detector (206, 10); wherein the ultraviolet radiation is intercepted and detected by the ultraviolet radiation detector (206, 10) and infrared radiation passes through the ultraviolet radiation detector (206, 10) and is intercepted and detected by the infrared radiation detector.