A light emitting diode comprising: a conductive support substrate; a protection layer at a periphery portion on the conductive support substrate; a light emitting structure layer on the conductive support substrate and the protection layer, wherein the light emitting structure layer includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an electrode at least partially overlapping the protection layer, on the light emitting structure layer, wherein the electrode includes an outer electrode, an inner electrode, and a pad unit, a bonding layer on the conductive support substrate, a reflective layer on the bonding layer, an ohmic contact layer on the reflective layer, characterized in that the electrode is disposed on the first conductivity type semiconductor layer, the outer electrode includes a first outer electrode (115a1), a second outer electrode (115a2), a third outer electrode (115a3), and a fourth outer electrode (115a4), the outer electrode is disposed in a rectangular shape with four sides and four corners, the first outer electrode (115a1) and the second outer electrode (115a2) extend in a first direction, the third outer electrode (115a3) and the fourth outer electrode (115a4) extend in a second direction, which is perpendicular to the first direction the inner electrode includes a first inner electrode (115b1) and a second inner electrode (115b2) which extend in the second direction and connect the first outer electrode (115a1) and the second outer electrode (115a2), wherein an outer side of the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer and within 50μm from the outermost side of the top of the first conductivity type semiconductor layer, wherein the reflective layer is disposed on a top of the bonding layer and the protection layer is partially disposed on the reflective layer, wherein the light emitting diode comprises a current blocking layer, a top of the current blocking layer being in contact with the second conductivity type semiconductor layer and a bottom and sides of the current blocking layer being in contact with the ohmic contact layer, and wherein the protection layer is a conductive layer. a conductive support substrate; a protection layer at a periphery portion on the conductive support substrate; a light emitting structure layer on the conductive support substrate and the protection layer, wherein the light emitting structure layer includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an electrode at least partially overlapping the protection layer, on the light emitting structure layer, wherein the electrode includes an outer electrode, an inner electrode, and a pad unit, a bonding layer on the conductive support substrate, a reflective layer on the bonding layer, an ohmic contact layer on the reflective layer, characterized in that the electrode is disposed on the first conductivity type semiconductor layer, the outer electrode includes a first outer electrode (115a1), a second outer electrode (115a2), a third outer electrode (115a3), and a fourth outer electrode (115a4), the outer electrode is disposed in a rectangular shape with four sides and four corners, the first outer electrode (115a1) and the second outer electrode (115a2) extend in a first direction, the third outer electrode (115a3) and the fourth outer electrode (115a4) extend in a second direction, which is perpendicular to the first direction the inner electrode includes a first inner electrode (115b1) and a second inner electrode (115b2) which extend in the second direction and connect the first outer electrode (115a1) and the second outer electrode (115a2), wherein an outer side of the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer and within 50μm from the outermost side of the top of the first conductivity type semiconductor layer, wherein the reflective layer is disposed on a top of the bonding layer and the protection layer is partially disposed on the reflective layer, wherein the light emitting diode comprises a current blocking layer, a top of the current blocking layer being in contact with the second conductivity type semiconductor layer and a bottom and sides of the current blocking layer being in contact with the ohmic contact layer, and wherein the protection layer is a conductive layer.