A semiconductor device, comprising: a direct current power source; a reference potential; first and second arm circuits connected in series between the reference potential and the direct current power source; and a load inductor connected to a connection point between the first arm circuit and the second arm circuit, wherein the first arm circuit includes: a first switching device; and multiple first diodes (204D1-204D4) connected in parallel to the first switching device, wherein only the multiple first diodes (204D1-204D4) are connected in parallel to the first switching device as recovery diodes for the first switching device, the second arm circuit includes: a second switching device; and multiple second diodes (204D5-204D8) connected in parallel to a current path of the second switching device, wherein only the multiple second diodes (204D5-204D8) are connected in parallel to the second switching device as recovery diodes for the second switching device, a forward direction of the first and second diodes is a direction from the reference potential to the direct current power source, all of the first and second diodes are Si diodes or SiC diodes, and the semiconductor device is arranged such that each length of the paths in which ringing currents, which flow by resonance between the junction capacitance of each diode and a series inductance in the switching upper arm when the switching devices (202a,202b) are turned on or off, flow between the multiple first diodes (204D1-204D4) and an output terminal of the direct current power source is different for each of the first diodes. a direct current power source; a reference potential; first and second arm circuits connected in series between the reference potential and the direct current power source; and a load inductor connected to a connection point between the first arm circuit and the second arm circuit, wherein the first arm circuit includes: a first switching device; and multiple first diodes (204D1-204D4) connected in parallel to the first switching device, wherein only the multiple first diodes (204D1-204D4) are connected in parallel to the first switching device as recovery diodes for the first switching device, a first switching device; and multiple first diodes (204D1-204D4) connected in parallel to the first switching device, wherein only the multiple first diodes (204D1-204D4) are connected in parallel to the first switching device as recovery diodes for the first switching device, the second arm circuit includes: a second switching device; and multiple second diodes (204D5-204D8) connected in parallel to a current path of the second switching device, wherein only the multiple second diodes (204D5-204D8) are connected in parallel to the second switching device as recovery diodes for the second switching device, a forward direction of the first and second diodes is a direction from the reference potential to the direct current power source, all of the first and second diodes are Si diodes or SiC diodes, and the semiconductor device is arranged such that each length of the paths in which ringing currents, which flow by resonance between the junction capacitance of each diode and a series inductance in the switching upper arm when the switching devices (202a,202b) are turned on or off, flow between the multiple first diodes (204D1-204D4) and an output terminal of the direct current power source is different for each of the first diodes. a second switching device; and multiple second diodes (204D5-204D8) connected in parallel to a current path of the second switching device, wherein only the multiple second diodes (204D5-204D8) are connected in parallel to the second switching device as recovery diodes for the second switching device, a forward direction of the first and second diodes is a direction from the reference potential to the direct current power source, all of the first and second diodes are Si diodes or SiC diodes, and the semiconductor device is arranged such that each length of the paths in which ringing currents, which flow by resonance between the junction capacitance of each diode and a series inductance in the switching upper arm when the switching devices (202a,202b) are turned on or off, flow between the multiple first diodes (204D1-204D4) and an output terminal of the direct current power source is different for each of the first diodes.