A method of manufacturing an array substrate comprising, on a base substrate, a reflective region a transmissive region of a pixel, the method comprising: a first mask process of forming an inorganic material protrusion in the reflective region on the base substrate, the inorganic material protrusion having an uneven upper surface; a second mask process of forming a reflective region pattern, a gate line, and a gate electrode branched from the gate line, respectively from a first transparent conductive layer and a first metal layer which are stacked in sequence on the base substrate obtained from the first mask process, the reflective region pattern being formed on the inorganic material protrusion and constituting a part of a common electrode in the reflective region, the common electrode further comprising a part disposed in the transmissive region being formed of the first transparent conductive layer; a third mask process of forming an active island formed of a semiconductor layer and a data line formed of a second metal layer on the base substrate obtained from the second mask process and forming a source electrode connected to the data line, a drain electrode, and a channel from the semiconductor layer, the source electrode and the drain electrode being on the active island, the channel being between the source electrode and the drain electrode; a fourth mask process of forming an insulation material layer on the base substrate obtained from the third mask process, treating the insulation material layer to form a planarization layer, and forming a through hole in the insulation material layer above the drain electrode in the reflective region; and a fifth mask process of forming a pixel electrode in the reflective and in the transmissive region from a second transparent conductive layer on the planarization layer and connected to the drain electrode via the through hole wherein the pixel electrode is formed to be coplanar with the base sustrate. a first mask process of forming an inorganic material protrusion in the reflective region on the base substrate, the inorganic material protrusion having an uneven upper surface; a second mask process of forming a reflective region pattern, a gate line, and a gate electrode branched from the gate line, respectively from a first transparent conductive layer and a first metal layer which are stacked in sequence on the base substrate obtained from the first mask process, the reflective region pattern being formed on the inorganic material protrusion and constituting a part of a common electrode in the reflective region, the common electrode further comprising a part disposed in the transmissive region being formed of the first transparent conductive layer; a third mask process of forming an active island formed of a semiconductor layer and a data line formed of a second metal layer on the base substrate obtained from the second mask process and forming a source electrode connected to the data line, a drain electrode, and a channel from the semiconductor layer, the source electrode and the drain electrode being on the active island, the channel being between the source electrode and the drain electrode; a fourth mask process of forming an insulation material layer on the base substrate obtained from the third mask process, treating the insulation material layer to form a planarization layer, and forming a through hole in the insulation material layer above the drain electrode in the reflective region; and a fifth mask process of forming a pixel electrode in the reflective and in the transmissive region from a second transparent conductive layer on the planarization layer and connected to the drain electrode via the through hole wherein the pixel electrode is formed to be coplanar with the base sustrate.