A computer-implemented method for detecting defects on a wafer, comprising: acquiring information for a target on a wafer, wherein the target comprises a pattern of interest formed on the wafer and a specific known defect of interest type occuring proximate to or in the pattern of interest, and wherein the information comprises an image of the target on the wafer acquired by imaging the target on the wafer, the location of the pattern of interest on the wafer, the location of the specific known defect of interest type relative to the pattern of interest, and one or more characteristics computed from the pattern of interest and the specific known defect of interest type; searching for target candidates on the wafer or on another wafer, wherein the target candidates comprise the pattern of interest; and detecting the specific known defect of interest type in the target candidates by identifying potential defect of interest locations in images of the target candidates and applying one or more detection parameters to images of the potential defect of interest locations, wherein said detecting is performed using a computer system to find all defects of the same type as the specific known defect of interest type; wherein the images of the potential defect of interest locations to which the one or more detection parameters are applied are images of care areas surrounding the potential defect of interest locations, and wherein the care areas are determined based on a size of the specific known defect of interest type that is known and unique to the location of the pattern of interest; wherein micro care areas are generated to cover one or more of the potential defect of interest locations, the micro care areas being located within and smaller than the care areas; wherein the one or more characteristics comprise one or more characteristics of the known defect of interest, and wherein applying the one or more detection parameters comprises applying a threshold to one or more values of the one or more characteristics determined from the micro care areas. acquiring information for a target on a wafer, wherein the target comprises a pattern of interest formed on the wafer and a specific known defect of interest type occuring proximate to or in the pattern of interest, and wherein the information comprises an image of the target on the wafer acquired by imaging the target on the wafer, the location of the pattern of interest on the wafer, the location of the specific known defect of interest type relative to the pattern of interest, and one or more characteristics computed from the pattern of interest and the specific known defect of interest type; searching for target candidates on the wafer or on another wafer, wherein the target candidates comprise the pattern of interest; and detecting the specific known defect of interest type in the target candidates by identifying potential defect of interest locations in images of the target candidates and applying one or more detection parameters to images of the potential defect of interest locations, wherein said detecting is performed using a computer system to find all defects of the same type as the specific known defect of interest type; wherein the images of the potential defect of interest locations to which the one or more detection parameters are applied are images of care areas surrounding the potential defect of interest locations, and wherein the care areas are determined based on a size of the specific known defect of interest type that is known and unique to the location of the pattern of interest; wherein micro care areas are generated to cover one or more of the potential defect of interest locations, the micro care areas being located within and smaller than the care areas; wherein the one or more characteristics comprise one or more characteristics of the known defect of interest, and wherein applying the one or more detection parameters comprises applying a threshold to one or more values of the one or more characteristics determined from the micro care areas.