A method for operating a memory cell, the method comprising: applying a read pulse having a first polarity to the memory cell, wherein a first or a second logic state is written to the memory cell, wherein the first logic state is written responsive to a write pulse having the first polarity and the second logic state is written responsive to the write pulse having a second polarity, and wherein the memory cell consists of a single layer of material between electrodes (110, 120), the memory cell having threshold voltage properties that allow the memory cell to act as a memory element and act as a selector device; sensing a current through the memory cell responsive to the read pulse; and determining the memory cell is in the first or second logic state, based on the current through the memory cell, wherein a magnitude of the read pulse is between a first threshold voltage associated with the first logic state and a second threshold voltage associated with the second logic state, so that when the read pulse is applied to the memory cell in the first logic state, the memory cell conducts current due to the read pulse exceeding the first threshold voltage and when the read pulse is applied to a memory cell in the second logic state, the memory cell does not conduct current due to the read pulse not exceeding the second threshold voltage; and wherein the memory cell is determined to be in the second logic state if the current through the memory cell is below a threshold current (I TH) and the memory cell is determined to be in the first logic state if the current through the memory cell is equal to or above the threshold current (I TH). applying a read pulse having a first polarity to the memory cell, wherein a first or a second logic state is written to the memory cell, wherein the first logic state is written responsive to a write pulse having the first polarity and the second logic state is written responsive to the write pulse having a second polarity, and wherein the memory cell consists of a single layer of material between electrodes (110, 120), the memory cell having threshold voltage properties that allow the memory cell to act as a memory element and act as a selector device; sensing a current through the memory cell responsive to the read pulse; and determining the memory cell is in the first or second logic state, based on the current through the memory cell, wherein a magnitude of the read pulse is between a first threshold voltage associated with the first logic state and a second threshold voltage associated with the second logic state, so that when the read pulse is applied to the memory cell in the first logic state, the memory cell conducts current due to the read pulse exceeding the first threshold voltage and when the read pulse is applied to a memory cell in the second logic state, the memory cell does not conduct current due to the read pulse not exceeding the second threshold voltage; and wherein the memory cell is determined to be in the second logic state if the current through the memory cell is below a threshold current (I TH) and the memory cell is determined to be in the first logic state if the current through the memory cell is equal to or above the threshold current (I TH).