A semiconductor package comprising: a magnetoresistive semiconductor device having a first axis corresponding to a hard axis and a second axis corresponding to an easy axis, a bottom magnetic shield, hereinafter called bottom shield (240, 340a, 340b, 640, 740) and a top magnetic shield, hereinafter called top shield (150a, 150b, 250a, 250b, 350); the bottom shield (240, 340a, 340b, 640, 740) extending in a first plane, the bottom shield (240, 340a, 340b, 640, 740) including a first side, a second side, and a first length therebetween extending in a direction of the hard axis in the first plane; the magnetoresistive semiconductor device further having a first surface and a second surface opposing the first surface, the first surface of the magnetoresistive semiconductor device arranged on at least a portion of the bottom shield (240, 340a, 340b, 640, 740) at a first interface, wherein the first interface is parallel to the first plane; and the top shield (150a, 150b, 250a, 250b, 350) arranged on the second surface of the magnetoresistive semiconductor device, the top shield (150a, 150b, 250a, 250b, 350) having a window for accessing the magnetoresistive semiconductor device, wherein the top shield (150a, 150b, 250a, 250b, 350) extends in a second plane parallel to the first plane, the top shield (150a, 150b, 250a, 250b, 350) including a first side, a second side, and a second length therebetween extending in the direction of the hard axis in the second plane, wherein the bottom shield (240, 340a, 340b, 640, 740) and the top shield (150a, 150b, 250a, 250b, 350) extend beyond the magnetoresistive semiconductor device in directions along the hard axis, and wherein the first length of the bottom shield (240, 340a, 340b, 640, 740) is greater than the second length of the top shield (150a, 150b, 250a, 250b, 350) such that the bottom shield (240, 340a, 340b, 640, 740) extends past the top shield (150a, 150b, 250a, 250b, 350) in the directions of the hard axis. a magnetoresistive semiconductor device having a first axis corresponding to a hard axis and a second axis corresponding to an easy axis, a bottom magnetic shield, hereinafter called bottom shield (240, 340a, 340b, 640, 740) and a top magnetic shield, hereinafter called top shield (150a, 150b, 250a, 250b, 350); the bottom shield (240, 340a, 340b, 640, 740) extending in a first plane, the bottom shield (240, 340a, 340b, 640, 740) including a first side, a second side, and a first length therebetween extending in a direction of the hard axis in the first plane; the magnetoresistive semiconductor device further having a first surface and a second surface opposing the first surface, the first surface of the magnetoresistive semiconductor device arranged on at least a portion of the bottom shield (240, 340a, 340b, 640, 740) at a first interface, wherein the first interface is parallel to the first plane; and the top shield (150a, 150b, 250a, 250b, 350) arranged on the second surface of the magnetoresistive semiconductor device, the top shield (150a, 150b, 250a, 250b, 350) having a window for accessing the magnetoresistive semiconductor device, wherein the top shield (150a, 150b, 250a, 250b, 350) extends in a second plane parallel to the first plane, the top shield (150a, 150b, 250a, 250b, 350) including a first side, a second side, and a second length therebetween extending in the direction of the hard axis in the second plane, wherein the bottom shield (240, 340a, 340b, 640, 740) and the top shield (150a, 150b, 250a, 250b, 350) extend beyond the magnetoresistive semiconductor device in directions along the hard axis, and wherein the first length of the bottom shield (240, 340a, 340b, 640, 740) is greater than the second length of the top shield (150a, 150b, 250a, 250b, 350) such that the bottom shield (240, 340a, 340b, 640, 740) extends past the top shield (150a, 150b, 250a, 250b, 350) in the directions of the hard axis.