An image sensor device comprising a pixel sensor associated with a single pixel of an image, wherein the pixel sensor comprises: - a substrate in which charge carriers are generatable in response to light incident on the substrate, - first (301, 616) and second substrate contact elements formed in the substrate for electrically contacting the pixel sensor, the first and second substrate contact elements being arranged adjacent to one another, and further comprising: - a first detection element (303, 304, 314, 315, 404, 504, 604) formed in the substrate and configured for detecting generated charge carriers in a first detection region between and including the substrate contact elements, - a second detection element (303, 304, 316, 317, 401, 500, 600) formed in the substrate and configured for detecting generated charge carriers in a second detection region, - a means for controlling the detectivity of the first detection element, the means being configured for modulating an injected majority carrier current in the first detection region through the substrate contact elements, wherein the first and second detection elements (303, 304, 314, 315, 316, 317,401, 404, 500, 504, 600, 604) are laterally placed alongside the first and second substrate contact elements (301, 302, 616), such that the first and second substrate contact elements (301, 302, 616) can control the detectivity of the first and second detection elements by modifying the majority carrier current between the first and second substrate contact elements, and are not placed in between the substrate contact elements; wherein the pixel sensor comprises a semiconductor based structure, wherein the substrate, the first and second substrate contact elements consist of semiconductor regions of a first conductivity type, wherein the first detection element and the second detection element consist of a semiconductor region of a second conductivity type; characterized in that the image sensor device is a color or multispectral image sensor device and in that the pixel sensor further comprises: - a first filter element (311, 409, 509, 609) configured for letting pass light of a first wavelength range, wherein the first filter element overlaps a portion of the substrate comprising the first and second substrate contact elements and also comprising the area sensitive to light between the first and second substrate contact elements; - a second filter element (309, 310, 408, 508, 608) configured for letting pass light of a second wavelength range, wherein the second filter element overlaps a portion of the substrate comprising the second detection element and does not overlap the first filter element, wherein the second wavelength range is different from the first wavelength range. - a substrate in which charge carriers are generatable in response to light incident on the substrate, - first (301, 616) and second substrate contact elements formed in the substrate for electrically contacting the pixel sensor, the first and second substrate contact elements being arranged adjacent to one another, - a first detection element (303, 304, 314, 315, 404, 504, 604) formed in the substrate and configured for detecting generated charge carriers in a first detection region between and including the substrate contact elements, - a second detection element (303, 304, 316, 317, 401, 500, 600) formed in the substrate and configured for detecting generated charge carriers in a second detection region, - a means for controlling the detectivity of the first detection element, the means being configured for modulating an injected majority carrier current in the first detection region through the substrate contact elements, - a first filter element (311, 409, 509, 609) configured for letting pass light of a first wavelength range, wherein the first filter element overlaps a portion of the substrate comprising the first and second substrate contact elements and also comprising the area sensitive to light between the first and second substrate contact elements; - a second filter element (309, 310, 408, 508, 608) configured for letting pass light of a second wavelength range, wherein the second filter element overlaps a portion of the substrate comprising the second detection element and does not overlap the first filter element, wherein the second wavelength range is different from the first wavelength range.