A light emitting element (10, 30, 40, 40B, 50, 60, 70) comprising: a semiconductor layered body (13, 33, 43, 53, 63, 73) including a first semiconductor layer (13n, 33n), a light emitting layer, and a second semiconductor layer (13p, 33p), with the light emitting layer being positioned between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being exposed from the light emitting layer and the second semiconductor layer at a plurality of exposed parts (13b, 33b, 43b, 53b, 63b, 73b) when viewed from a second semiconductor layer side of the semiconductor layered body; an insulating film covering the semiconductor layered body, the insulating film defining a plurality of openings respectively arranged above the plurality of exposed parts of the first semiconductor layer; a first electrode connected to the first semiconductor layer at the exposed parts through the openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film; a second electrode electrically connected to the second semiconductor layer (13p, 33p); at least one second external connecting part (22, 32, 42, 52, 62) connected to the second electrode; characterized in that the light emitting element is further comprising a plurality of first external connecting parts (21, 31, 41, 51, 71) connected to the first electrode, the first external connecting parts being spaced apart from the exposed parts (13b, 33b, 43b, 53b, 63b,73b) in a plan view; wherein a group comprising at least one of the first external connecting parts and other group comprising at least one of the first external connecting parts respectively surround adjacent ones of the exposed parts while being spaced apart from each other in the plan view. a semiconductor layered body (13, 33, 43, 53, 63, 73) including a first semiconductor layer (13n, 33n), a light emitting layer, and a second semiconductor layer (13p, 33p), a first semiconductor layer (13n, 33n), a light emitting layer, and a second semiconductor layer (13p, 33p), with the light emitting layer being positioned between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being exposed from the light emitting layer and the second semiconductor layer at a plurality of exposed parts (13b, 33b, 43b, 53b, 63b, 73b) when viewed from a second semiconductor layer side of the semiconductor layered body; being positioned between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being exposed from the light emitting layer and the second semiconductor layer at a plurality of exposed parts (13b, 33b, 43b, 53b, 63b, 73b) when viewed from a second semiconductor layer side of the semiconductor layered body; an insulating film covering the semiconductor layered body, the insulating film defining a plurality of openings respectively arranged above the plurality of exposed parts of the first semiconductor layer; a first electrode connected to the first semiconductor layer at the exposed parts through the openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film; a second electrode electrically connected to the second semiconductor layer (13p, 33p); at least one second external connecting part (22, 32, 42, 52, 62) connected to the second electrode; characterized in that the light emitting element is further comprising a plurality of first external connecting parts (21, 31, 41, 51, 71) connected to the first electrode, the first external connecting parts being spaced apart from the exposed parts (13b, 33b, 43b, 53b, 63b,73b) in a plan view; wherein a group comprising at least one of the first external connecting parts and other group comprising at least one of the first external connecting parts respectively surround adjacent ones of the exposed parts while being spaced apart from each other in the plan view.