An integrated device package base comprising: an encapsulation portion comprising: an encapsulation layer; a bridge, at least partially embedded in the encapsulation layer, configured to provide a first electrical path for a first signal between a first die and a second die; and a first via, in the encapsulation layer, coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die; and a redistribution portion coupled to the encapsulation portion, the redistribution portion comprising: at least one dielectric layer; and at least one interconnect, in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate; a dielectric layer; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, (408, 410, 418, 420) traversing at least the substrate, the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. an encapsulation portion comprising: an encapsulation layer; a bridge, at least partially embedded in the encapsulation layer, configured to provide a first electrical path for a first signal between a first die and a second die; and a first via, in the encapsulation layer, coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die; and an encapsulation layer; a bridge, at least partially embedded in the encapsulation layer, configured to provide a first electrical path for a first signal between a first die and a second die; and a first via, in the encapsulation layer, coupled to the bridge, wherein the first via and the bridge are configured to provide a second electrical path for a second signal to the first die; and a redistribution portion coupled to the encapsulation portion, the redistribution portion comprising: at least one dielectric layer; and at least one interconnect, in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate; a dielectric layer; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, (408, 410, 418, 420) traversing at least the substrate, the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. at least one dielectric layer; and at least one interconnect, in the at least one dielectric layer, coupled to the first via wherein the bridge comprises: a substrate; a dielectric layer; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, (408, 410, 418, 420) traversing at least the substrate, the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die. a substrate; a dielectric layer; a first set of interconnects configured to provide the first electrical path for the first signal between the first die and the second die; and a through substrate via, TSV, (408, 410, 418, 420) traversing at least the substrate, the TSV coupled to the first via, the TSV configured to provide the second electrical path for the second signal to the first die.