A range sensor comprising: a pixel layer made of a semiconductor of a first conductivity type; a shielding plate having an aperture and provided above the pixel layer, wherein an inner edge of the aperture defines a light-receiving area in the pixel layer; a surface-buried region (25, 62) of a second conductivity type selectively buried in an upper portion of the pixel layer, configured to implement a photodiode in the light-receiving area by forming a junction with the pixel layer, wherein the surface-buried region (25, 62) extends from the light-receiving area toward plural portions shielded by the shielding plate along the upper portion of the pixel layer, delineating a configuration with three or more branches; a plurality of charge-accumulation regions of the second conductivity type having a higher impurity concentration than the surface-buried region (25, 62) connected to tips of the respective branches; a plurality of transfer-control mechanisms (31, 42, 43, 44) provided at the respective branches adjacent to the charge-accumulation regions to control a transfer of signal charges to the charge-accumulation regions; and a guide region (26a, 26b, 26f, 64) of the second conductivity type having a higher impurity concentration than the surface-buried region (25, 62), and a lower impurity concentration than the charge-accumulation regions, wherein the guide region (26a, 26b, 26f, 64) is buried in a part of an upper portion of the surface-buried region (25, 62) such that one end of a planar pattern is provided in a part of the light-receiving area defined by the inner edge of the aperture and other ends of the planar pattern are branched under the optical shielding plate, extending to at least a part of the respective transfer-control mechanisms (31, 42, 43, 44), the planar pattern having a gradually increasing width along the direction towards the transfer control mechanisms (31, 42, 43, 44) measured in a direction perpendicular to a transfer direction of the signal charges. a pixel layer made of a semiconductor of a first conductivity type; a shielding plate having an aperture and provided above the pixel layer, wherein an inner edge of the aperture defines a light-receiving area in the pixel layer; a surface-buried region (25, 62) of a second conductivity type selectively buried in an upper portion of the pixel layer, configured to implement a photodiode in the light-receiving area by forming a junction with the pixel layer, wherein the surface-buried region (25, 62) extends from the light-receiving area toward plural portions shielded by the shielding plate along the upper portion of the pixel layer, delineating a configuration with three or more branches; a plurality of charge-accumulation regions of the second conductivity type having a higher impurity concentration than the surface-buried region (25, 62) connected to tips of the respective branches; a plurality of transfer-control mechanisms (31, 42, 43, 44) provided at the respective branches adjacent to the charge-accumulation regions to control a transfer of signal charges to the charge-accumulation regions; and a guide region (26a, 26b, 26f, 64) of the second conductivity type having a higher impurity concentration than the surface-buried region (25, 62), and a lower impurity concentration than the charge-accumulation regions, wherein the guide region (26a, 26b, 26f, 64) is buried in a part of an upper portion of the surface-buried region (25, 62) such that one end of a planar pattern is provided in a part of the light-receiving area defined by the inner edge of the aperture and other ends of the planar pattern are branched under the optical shielding plate, extending to at least a part of the respective transfer-control mechanisms (31, 42, 43, 44), the planar pattern having a gradually increasing width along the direction towards the transfer control mechanisms (31, 42, 43, 44) measured in a direction perpendicular to a transfer direction of the signal charges.