mhurhangee/ep-ind-claims huggingface dataset:
A method for dry-etching lithium niobate comprising: Step 1, putting patterned lithium niobate into an etching machine; Step 2, introducing a mixed etching gas of Cl 2, H 2 and an inert gas into an etching cavity of the etching machine, and starting the etching machine by radio frequency ignition to start to etch; and Step 3, completing the etching after etching time is reached, wherein the lithium niobate in Step 1 is a lithium niobate wafer serving as a material to be etched, or a wafer made from a lithium niobate thin film grown above a substrate, and the lithium niobate thin film serves as a material to be etched, and either wherein a SiO thin film or SiN thin film or Si thin film is adopted as a mask material during dry-etching in the lithium niobate wafer or the wafer containing a lithium niobate thin film, the mask material has been patterned; the SiO thin film or SiN thin film or Si thin film is a hard mask; or wherein a photoresist is adopted as a mask material during dry-etching in the lithium niobate wafer or the wafer containing a lithium niobate thin film, the mask material has been patterned. Step 1, putting patterned lithium niobate into an etching machine; Step 2, introducing a mixed etching gas of Cl 2, H 2 and an inert gas into an etching cavity of the etching machine, and starting the etching machine by radio frequency ignition to start to etch; and Step 3, completing the etching after etching time is reached, wherein the lithium niobate in Step 1 is a lithium niobate wafer serving as a material to be etched, or a wafer made from a lithium niobate thin film grown above a substrate, and the lithium niobate thin film serves as a material to be etched, and either wherein a SiO thin film or SiN thin film or Si thin film is adopted as a mask material during dry-etching in the lithium niobate wafer or the wafer containing a lithium niobate thin film, the mask material has been patterned; the SiO thin film or SiN thin film or Si thin film is a hard mask; or wherein a photoresist is adopted as a mask material during dry-etching in the lithium niobate wafer or the wafer containing a lithium niobate thin film, the mask material has been patterned.
An image forming apparatus having a replaceable element (30, 40, 50, 51, 60, 70), comprising: a microprocessor in the image forming apparatus, the microprocessor being to control operations of the image forming apparatus and the replaceable element; wherein the microprocessor comprises an integrated memory (110a, 120, 130) in which lifespan information of the replaceable element is recorded by the microprocessor, wherein the replaceable element does not include a memory in which lifespan information of the replaceable element is recorded; wherein the image forming apparatus further comprises an auxiliary memory separate from the microprocessor and replaceable element; wherein information of the replaceable element other than lifespan information is stored in the auxiliary memory; wherein the replaceable element (30, 40, 50, 51, 50, 70) is an initial developer cartridge; and wherein the microprocessor is further configured to, in response to determining that the lifespan information of the initial developer cartridge stored in the integrated memory has exceeded a preset threshold value, stop a printing operation of the image forming apparatus. a microprocessor in the image forming apparatus, the microprocessor being to control operations of the image forming apparatus and the replaceable element; wherein the microprocessor comprises an integrated memory (110a, 120, 130) in which lifespan information of the replaceable element is recorded by the microprocessor, wherein the replaceable element does not include a memory in which lifespan information of the replaceable element is recorded; wherein the image forming apparatus further comprises an auxiliary memory separate from the microprocessor and replaceable element; wherein information of the replaceable element other than lifespan information is stored in the auxiliary memory; wherein the replaceable element (30, 40, 50, 51, 50, 70) is an initial developer cartridge; and wherein the microprocessor is further configured to, in response to determining that the lifespan information of the initial developer cartridge stored in the integrated memory has exceeded a preset threshold value, stop a printing operation of the image forming apparatus.
A suspension for a high power micro speaker that includes an outer peripheral portion, a central portion and connection portions (220', 220"), the suspension being provided with a conductive pattern, and the outer peripheral portion and the central portion being formed in a rectangular shape, wherein the connection portions (220', 220") comprise a pair of long connection portions connecting long sides of the outer peripheral portion and the central portion and a pair of short connection portions (220") connecting short sides of the outer peripheral portion and the central portion, wherein land portions for use in soldering or welding lead-in wires (120, 140) of a voice coil are formed on the long connection portions, wherein the suspension further comprises a protective film (310, 320, 330) for protecting the conductive pattern, which protective film (310, 320, 330) is attached to the outer peripheral portion, at least a part of the central portion and at least a part of the connection portions (220', 220"), characterized in that the protective film (310, 320, 330) is not attached to parts of the long connection portions disposed on the long sides, or is not attached to the long connection portions.
A temperature measuring apparatus for measuring a temperature of a battery pack, comprising: a first resistor connected between a first power supply (Vref) and a first node; a second resistor connected between a second node and a second power supply; a temperature-variable resistive element connected to between the first node and the second node, a resistance of the temperature-variable resistive element being varied depending on a temperature; a processor that measures a temperature of the battery pack based on at least one of a first temperature measured based on a voltage of the first node and a second temperature measured based on a voltage of the second node; and the apparatus is characterized in that: the processor is configured to determine that temperature measurement is invalid when the first temperature is different from the second temperature. a first resistor connected between a first power supply (Vref) and a first node; a second resistor connected between a second node and a second power supply; a temperature-variable resistive element connected to between the first node and the second node, a resistance of the temperature-variable resistive element being varied depending on a temperature; a processor that measures a temperature of the battery pack based on at least one of a first temperature measured based on a voltage of the first node and a second temperature measured based on a voltage of the second node; and the apparatus is characterized in that: the processor is configured to determine that temperature measurement is invalid when the first temperature is different from the second temperature.
A process for designing a rugged pattern on a golf ball surface, the process comprising the steps of: arranging a large number of generating points (20,36,68) on a surface of a phantom sphere; assuming a large number of Voronoi regions (22,38,52,66) on the surface of the phantom sphere by a Voronoi tessellation based on the large number of generating points (20,36,68); characterized in that the process further comprises the steps of: calculating a center of gravity of each of the Voronoi regions (22,38,52,66) and setting the centers of gravity as new generating points (28,38,68); assuming a large number of new Voronoi regions on the surface of the phantom sphere by a Voronoi tessellation based on a large number of the new generating points (28,38,68); and assigning dimples (8,34,60)and a land to the surface of the phantom sphere based on contours of the large number of new Voronoi regions. arranging a large number of generating points (20,36,68) on a surface of a phantom sphere; assuming a large number of Voronoi regions (22,38,52,66) on the surface of the phantom sphere by a Voronoi tessellation based on the large number of generating points (20,36,68); calculating a center of gravity of each of the Voronoi regions (22,38,52,66) and setting the centers of gravity as new generating points (28,38,68); assuming a large number of new Voronoi regions on the surface of the phantom sphere by a Voronoi tessellation based on a large number of the new generating points (28,38,68); and assigning dimples (8,34,60)and a land to the surface of the phantom sphere based on contours of the large number of new Voronoi regions.
Electro-optical travelling wave modulator comprising at least one optical waveguide (112, 122) and an electrical line arrangement forming a travelling wave electrode arrangement for applying a voltage across the optical waveguide (112, 122), the electrical line arrangement comprising - a first and a second electrical line (11, 12) forming a coplanar strip line; - at least one terminating resistor (21, 22, 24) terminating the first and the second electrical line (11, 12), - wherein in a first region of the electrical line arrangement the first and the second electrical line (11, 12) extend in a first distance (d 1) from one another and wherein in a second region of the electrical line arrangement the first and the second electrical line (11, 12) extend in a second distance (d 2) from one another that is larger than the first distance (d 1), characterized in that at least one electrically conductive structure (3, 31) is arranged between the first and the second electrical line (11, 12) at least partially in the second region of the electrical line arrangement for adapting the impedance of the coplanar strip line, wherein the terminating resistor (21, 22, 24) is physically arranged at a position between the first and the second electrical line (11, 12) in the second region of the electrical line arrangement. - a first and a second electrical line (11, 12) forming a coplanar strip line; - at least one terminating resistor (21, 22, 24) terminating the first and the second electrical line (11, 12), - wherein in a first region of the electrical line arrangement the first and the second electrical line (11, 12) extend in a first distance (d 1) from one another and wherein in a second region of the electrical line arrangement the first and the second electrical line (11, 12) extend in a second distance (d 2) from one another that is larger than the first distance (d 1),
A device and a system pipe, said system pipe having a hole formed therein, said device comprising: (a) a pipe fitting attached to the system pipe, said pipe fitting positioned over said hole of said system pipe and in fluid communication with said system pipe; (b) a collection chamber for collecting gas from the system pipe; (c) a standpipe inside said collection chamber and in fluid communication with said collection chamber, said pipe fitting and said system pipe; (d) a magnetic float carried within said standpipe, said magnetic float being freely movable in said standpipe so that, when fluid or gas flows from said system pipe through said hole into said pipe fitting and into said standpipe, said magnetic float floats vertically with the level of said fluid in said standpipe; (e) a vent valve in fluid communication with said standpipe for venting gas entering said standpipe; and (f) an indicator exterior to said standpipe and responsive to movement of said magnetic float vertically within said standpipe to thereby indicate the level of said fluid in said standpipe. (a) a pipe fitting attached to the system pipe, said pipe fitting positioned over said hole of said system pipe and in fluid communication with said system pipe; (b) a collection chamber for collecting gas from the system pipe; (c) a standpipe inside said collection chamber and in fluid communication with said collection chamber, said pipe fitting and said system pipe; (d) a magnetic float carried within said standpipe, said magnetic float being freely movable in said standpipe so that, when fluid or gas flows from said system pipe through said hole into said pipe fitting and into said standpipe, said magnetic float floats vertically with the level of said fluid in said standpipe; (e) a vent valve in fluid communication with said standpipe for venting gas entering said standpipe; and (f) an indicator exterior to said standpipe and responsive to movement of said magnetic float vertically within said standpipe to thereby indicate the level of said fluid in said standpipe.
A method of manufacturing a heat shield panel assembly, the method comprising: injecting melted metal into a negative cavity of a heat shield panel in a strong back core containing at least Y 2 0 3, wherein the metal comprises yttrium, and wherein the heat shield panel comprising one or more orifices; allowing the metal to solidify to form the heat shield panel; and removing the heat shield panel from the strong back core. injecting melted metal into a negative cavity of a heat shield panel in a strong back core containing at least Y 2 0 3, wherein the metal comprises yttrium, and wherein the heat shield panel comprising one or more orifices; wherein the metal comprises yttrium, and wherein the heat shield panel comprising one or more orifices; allowing the metal to solidify to form the heat shield panel; and removing the heat shield panel from the strong back core.
A process for the manufacture of shaped cured silicone articles, comprising the following steps: a) a shaping step, comprising the continuous shaping of a mixture comprising: (i) at least one linear polyorganosiloxane having at least three alkenyl groups and an average number of diorganosiloxy units determined by GPC with polystyrene as standard of at least 3000, (ii) optionally one or more polyorganosiloxanes having alkenyl groups, other than the polyorganosiloxane according to the component (i), (iii) at least one polyorganosiloxane having at least two SiH groups, (iv) at least one photoactivatable transition metal catalyst, (v) optionally one or more filler, (vi) optionally one or more conventional additives, in a shaping apparatus, thereby obtaining a shaped silicone article, b) at least one irradiation step to photoactivate the photoactivatable transition metal catalyst, c) optionally one or more heat treatment steps, d) optionally one or more mixing steps, e) optionally one or more cutting and/or winding and/or packaging steps of the continuously shaped cured silicone article. a) a shaping step, comprising the continuous shaping of a mixture comprising: (i) at least one linear polyorganosiloxane having at least three alkenyl groups and an average number of diorganosiloxy units determined by GPC with polystyrene as standard of at least 3000, (ii) optionally one or more polyorganosiloxanes having alkenyl groups, other than the polyorganosiloxane according to the component (i), (iii) at least one polyorganosiloxane having at least two SiH groups, (iv) at least one photoactivatable transition metal catalyst, (v) optionally one or more filler, (vi) optionally one or more conventional additives, in a shaping apparatus, thereby obtaining a shaped silicone article, (i) at least one linear polyorganosiloxane having at least three alkenyl groups and an average number of diorganosiloxy units determined by GPC with polystyrene as standard of at least 3000, (ii) optionally one or more polyorganosiloxanes having alkenyl groups, other than the polyorganosiloxane according to the component (i), (iii) at least one polyorganosiloxane having at least two SiH groups, (iv) at least one photoactivatable transition metal catalyst, (v) optionally one or more filler, (vi) optionally one or more conventional additives, in a shaping apparatus, thereby obtaining a shaped silicone article, b) at least one irradiation step to photoactivate the photoactivatable transition metal catalyst, c) optionally one or more heat treatment steps, d) optionally one or more mixing steps, e) optionally one or more cutting and/or winding and/or packaging steps of the continuously shaped cured silicone article.
A system for treating surfaces of bodies, in particular vacuum dressing, comprising - at least one connection device for the fluidic connection of a negative pressure generating device for generating a negative pressure in a volume which can be positioned on the surface of a body, and - at least one device for generating plasma (8, 8a, 15), with which the volume in which the negative pressure can be generated can be at least partially filled with plasma or a plasma-activated medium. wherein the system comprises a first device for generating plasma (8, 8a) which is arranged in the volume in which the negative pressure can be generated, so that the plasma and/or plasma-activated medium can be generated in the volume, characterized in that the first device for plasma generation (8, 8a) is set up as a sensor system for detecting at least one physical parameter on the surface of the body, wherein the plasma source of the first device for plasma generation can additionally be used as a sensor system for wound monitoring. - at least one connection device for the fluidic connection of a negative pressure generating device for generating a negative pressure in a volume which can be positioned on the surface of a body, and - at least one device for generating plasma (8, 8a, 15), with which the volume in which the negative pressure can be generated can be at least partially filled with plasma or a plasma-activated medium. wherein the system comprises a first device for generating plasma (8, 8a) which is arranged in the volume in which the negative pressure can be generated, so that the plasma and/or plasma-activated medium can be generated in the volume, characterized in that the first device for plasma generation (8, 8a) is set up as a sensor system for detecting at least one physical parameter on the surface of the body, wherein the plasma source of the first device for plasma generation can additionally be used as a sensor system for wound monitoring.
Laboratory sample distribution system, comprising - a number of sample container carriers being adapted to carry one or more sample containers, - a cleaning device, - a transport plane being adapted to support the sample container carriers and the cleaning device, - drive means being adapted to move the sample container carriers and the cleaning device on top of the transport plane, and - a control device being configured to control the movement of the sample container carriers and to control the movement of the cleaning device on top of the transport plane by driving the drive means such that the sample container carriers move along corresponding transport paths and that the cleaning device moves along a cleaning path, - wherein the cleaning device comprises cleaning means adapted for cleaning the transport plane, and - wherein the control device is configured to control the movement of the sample container carriers and to control the movement of the cleaning device such that the sample container carriers have priority over the cleaning device. - a number of sample container carriers being adapted to carry one or more sample containers, - a cleaning device, - a transport plane being adapted to support the sample container carriers and the cleaning device, - drive means being adapted to move the sample container carriers and the cleaning device on top of the transport plane, and - a control device being configured to control the movement of the sample container carriers and to control the movement of the cleaning device on top of the transport plane by driving the drive means such that the sample container carriers move along corresponding transport paths and that the cleaning device moves along a cleaning path, - wherein the cleaning device comprises cleaning means adapted for cleaning the transport plane, and - wherein the control device is configured to control the movement of the sample container carriers and to control the movement of the cleaning device such that the sample container carriers have priority over the cleaning device.
Polymeric nanocarriers comprising an immunostimulatory agent and a surface comprising T cell antigens and/or B cell antigens, wherein the surface targets the nanocarriers to antigen presenting cells (APCs), the surface binds to APC surfaces, the nanocarriers have a mean geometric diameter that is greater than 50 nm but less than 500 nm, and the nanocarriers are obtainable by self-assembly of a mixture of amphiphilic polymers and amphiphilic polymers covalently bound to the T cell antigens and/or the B cell antigens, wherein the said polymers covalently bound to the T cell antigen and/or the B cell antigen constitute 5-50% of said mixture, and wherein the amphiphilic polymers comprise a polymer selected from the group consisting of: polylactic acid, poly(glycolic acid), and poly(lactic acid/glycolic acid) (PLGA).
A heteroleptic iridium compound having the formula Ir(L 1) n (L 2) 3-n; wherein the ligand L 1 is a first ligand having Formula I, wherein the ligand L 2 is a second ligand having Formula II, wherein L 1 is different from L 2; wherein R 1 is a partially or fully deuterated group selected from the group consisting of alkyl and cycloalkyl; wherein R 2 represents mono, di, tri substitutions or no substitution; wherein R 3, R 4 and R 5 each represent mono, di, tri, tetra substitutions or no substitution; wherein R 2 and R 3 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, and combinations thereof; wherein R 4 and R 5 are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and wherein n is 1 or 2. wherein the ligand L 2 is a second ligand having Formula II, wherein L 1 is different from L 2; wherein R 1 is a partially or fully deuterated group selected from the group consisting of alkyl and cycloalkyl; wherein R 2 represents mono, di, tri substitutions or no substitution; wherein R 3, R 4 and R 5 each represent mono, di, tri, tetra substitutions or no substitution; wherein R 2 and R 3 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, and combinations thereof; wherein R 4 and R 5 are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and wherein n is 1 or 2.