mhurhangee/ep-ind-claims huggingface dataset:
An ion analysis device, comprising: an ion source, the ion source including a spark ion source (101; 210; 310; 401; 501) with a plurality of electrodes (211; 212; 311; 312), at least a first electrode (211; 311) and a second electrode (212; 312) in the plurality of electrodes (211; 212; 311; 312) being separated by a gap and configured to permit a spark discharge therebetween; and a controller (215; 315) that controls a switching frequency of voltage changes of electrodes (211; 212; 311; 312) of the ion source in order to push positive and negative ions generated by spark discharge from the ion source, wherein the controller (215; 315) includes a computer controlled high voltage fast switching circuit that is able to produce stable extraction voltages during analysis and rapidly switch polarity of the first electrode (211; 311) and the second electrode (212; 312) at any time after completion of a spectrum and wherein the positive ions are pushed in response to the controller (215; 315) providing a first polarity to the first electrode (211; 311) and the second electrode (212; 312) and the negative ions are pushed in response to the controller (215; 315) providing a second polarity to the first electrode (211; 311) and the second electrode (212; 312) that is opposite of the first polarity. an ion source, the ion source including a spark ion source (101; 210; 310; 401; 501) with a plurality of electrodes (211; 212; 311; 312), at least a first electrode (211; 311) and a second electrode (212; 312) in the plurality of electrodes (211; 212; 311; 312) being separated by a gap and configured to permit a spark discharge therebetween; and a controller (215; 315) that controls a switching frequency of voltage changes of electrodes (211; 212; 311; 312) of the ion source in order to push positive and negative ions generated by spark discharge from the ion source, wherein the controller (215; 315) includes a computer controlled high voltage fast switching circuit that is able to produce stable extraction voltages during analysis and rapidly switch polarity of the first electrode (211; 311) and the second electrode (212; 312) at any time after completion of a spectrum and wherein the positive ions are pushed in response to the controller (215; 315) providing a first polarity to the first electrode (211; 311) and the second electrode (212; 312) and the negative ions are pushed in response to the controller (215; 315) providing a second polarity to the first electrode (211; 311) and the second electrode (212; 312) that is opposite of the first polarity.
A production method of a Group III nitride semiconductor element having, on a substrate, in this order, an n-type layer, an active layer and a p-type layer which comprise a Group III nitride semiconductor, wherein the n-type layer is composed of an undercoat layer, n-type contact layer and n-type clad layer, the n-type clad layer containing In, during growth of the n-type contact layer and before growth of the n-type clad layer, the growth rate of the semiconductor is reduced, and the active layer is successively grown after growth of the n-type clad layer, wherein the substrate temperature during reducing the growth rate is not lower than the substrate temperature in the course of growth of the n-type layer immediately before the growth rate is reduced, and the substrate temperature during reducing the growth rate is 900 to 1400°C.
A device for the alignment of a first contact surface of a first substrate which can be mounted on a first platform with a second contact surface of a second substrate which can be mounted on a second platform with the following features: - first X-Y positions of first alignment keys (3.1 to 3.n) arranged along the first contact surface can be detected in a detection position by first detection means (7, 7') in a first X-Y plane in a first X-Y coordinate system independent of a movement of the first substrate, - second X-Y positions of second alignment keys (4.1 to 4.n) arranged along the second contact surface and corresponding to the first alignment means (3.1 to 3.n) can be detected in the detection position by second detection means (8, 8') in a second X-Y plane parallel to the first X-Y plane in a second X-Y coordinate system independent of a movement of the second substrate, - the positions of the substrates (1, 2) can be detected in the detection position by position detection means (30, 31, 31', 32, 33, 33', 34, 35, 35'), - the first contact surface can be aligned on the basis of the first X-Y positions in a first alignment position and the second contact surface can be aligned on the basis of the second X-Y positions in a second alignment position, characterised in that the first and second X-Y plane (5, 6) are identical during the detection of the first and second X-Y positions, wherein a divergence of the planes from one another of at most 20 μm is included. - first X-Y positions of first alignment keys (3.1 to 3.n) arranged along the first contact surface can be detected in a detection position by first detection means (7, 7') in a first X-Y plane in a first X-Y coordinate system independent of a movement of the first substrate, - second X-Y positions of second alignment keys (4.1 to 4.n) arranged along the second contact surface and corresponding to the first alignment means (3.1 to 3.n) can be detected in the detection position by second detection means (8, 8') in a second X-Y plane parallel to the first X-Y plane in a second X-Y coordinate system independent of a movement of the second substrate, - the positions of the substrates (1, 2) can be detected in the detection position by position detection means (30, 31, 31', 32, 33, 33', 34, 35, 35'), - the first contact surface can be aligned on the basis of the first X-Y positions in a first alignment position and the second contact surface can be aligned on the basis of the second X-Y positions in a second alignment position,
A curable silicone composition which is a hydrosilylation reaction curable silicone composition for sealing, coating, or adhering of an optical semiconductor element; the curable silicone composition comprising at least one type of compound selected from the group consisting of triazole-based compounds with the exception of non-substituted benzotriazole, wherein the triazole-based compound is at least one type selected from the group consisting of N,N-bis(2-ethylhexyl)-[(1,2,4-triazol-1-yl)methyl]amine, carboxybenzotriazole, and nitrobenzotriazole.
A light emitting device package (100,200) comprising: a plurality of light emitting diode chips (130,131,230); a lead frame (110,210) comprising: a plurality of connection portions (111,112,113) each having a mounting portion (115,215) on which one of the plurality of light emitting diode chips is mounted, for circuit connecting the plurality of light emitting diode chips; and a terminal portion (111b,112d,111d,112b,211a,212a,211b,212b) extended from at least one of the plurality of connection portions; electrical connections (141, 142) between each light emitting diode chip and the connection portion on which it is mounted and an adjacent one of the connection portions; and a plurality of reflective cavities (150,250) that reflect light emitted from the plurality of light emitting diode chips, surround the plurality of light emitting diode chips and are spaced from each other; characterised in that the reflective cavities of the respective light emitting device chips are independent elements, fixed and bonded onto the connection portions and separate from each other, the connection portions being exposed around each of the cavities; and in that the connection portions adjacent to each other are fixed and bonded to each other by the plurality of reflective cavities, and in that the gaps through which the first connection portion, the intermediate connection portions, and the second connection portion are spaced apart from each other are filled with the same material as the reflective cavities. a plurality of light emitting diode chips (130,131,230); a lead frame (110,210) comprising: a plurality of connection portions (111,112,113) each having a mounting portion (115,215) on which one of the plurality of light emitting diode chips is mounted, for circuit connecting the plurality of light emitting diode chips; and a terminal portion (111b,112d,111d,112b,211a,212a,211b,212b) extended from at least one of the plurality of connection portions; electrical connections (141, 142) between each light emitting diode chip and the connection portion on which it is mounted and an adjacent one of the connection portions; and a plurality of reflective cavities (150,250) that reflect light emitted from the plurality of light emitting diode chips, surround the plurality of light emitting diode chips and are spaced from each other; characterised in that the reflective cavities of the respective light emitting device chips are independent elements, fixed and bonded onto the connection portions and separate from each other, the connection portions being exposed around each of the cavities; and in that the connection portions adjacent to each other are fixed and bonded to each other by the plurality of reflective cavities, and in that the gaps through which the first connection portion, the intermediate connection portions, and the second connection portion are spaced apart from each other are filled with the same material as the reflective cavities.
Single-phase or polyphase electromechanical actuator intended for insertion into a winding tube of a home automation screen and comprising: • a so-called "dumbbell" motor having a stator and a rotor, wherein the rotor comprises a shaft with two discs (14A, 14B) arranged thereon, which are fitted with magnets and rotationally fixed to the shaft around an axis of rotation (X-X), and • a shell made of magnetic material, in particular of ferromagnetic steel, characterised in that it additionally comprises a casing made of non-magnetic material arranged radially between the motor and the shell of the actuator. • a so-called "dumbbell" motor having a stator and a rotor, wherein the rotor comprises a shaft with two discs (14A, 14B) arranged thereon, which are fitted with magnets and rotationally fixed to the shaft around an axis of rotation (X-X), and • a shell made of magnetic material, in particular of ferromagnetic steel,
Submarine having at least one first lighting device, the submarine having a pressure hull, the pressure hull having ribs, the at least one first lighting device being designed to generate different color temperatures, the at least one first lighting device being arranged between the ribs of the pressure hull of the submarine, the at least one first lighting device being adapted to the curvature of the pressure hull, characterized in that the at least one first lighting device is designed to reproduce the colour temperature of the sky in a time-of-day-specific manner.
A compound for use in a method of treating, preventing, or inhibiting a gram negative infection in a patient, comprising administering to the patient an effective amount of the compound having the formula according to: wherein: R 1 is a moiety-(CH 2)n-COOH; n is 1 to 3; R 2 is selected from moieties of the group or -2-[(2,4-difluorobenzoyl)amino]-3-(1H-indol-3-yl)propanoate; or any combination thereof, or a pharmaceutically acceptable salt, solvate, poly-morph, tautomer thereof. R 1 is a moiety-(CH 2)n-COOH; n is 1 to 3; R 2 is selected from moieties of the group or -2-[(2,4-difluorobenzoyl)amino]-3-(1H-indol-3-yl)propanoate; or any combination thereof, or a pharmaceutically acceptable salt, solvate, poly-morph, tautomer thereof.
A method for reporting channel state information, CSI, by a user equipment, UE,, in a multi-cell wireless communication system, the method comprising: receiving a configuration information for reporting CSI including information of interference measurement resources, IMRs, associated with a CSI process and information of two subframe sets for the CSI process, via high layer signaling from a serving cell, the two subframe sets with different interference characteristics; and when CSI reference resource of the two subframe sets is valid, performing interference measurement for the CSI of the CSI process configured by the higher layer and reporting the CSI related with one of the two subframe sets based on the information of IMRs, wherein the interference measurement for the CSI is configured to be derived using an IMR associated with one of the two subframe sets for the CSI process; and when the CSI reference resource of the two subframe sets is invalid, omitting reporting of the CSI corresponding to the CSI process, wherein the CSI reference resource of the two subframe sets is invalid, if usage of the CSI reference resource is changed from downlink to uplink, and wherein the two subframe sets are defined to change uplink-downlink, UL-DL, according to a system load state. receiving a configuration information for reporting CSI including information of interference measurement resources, IMRs, associated with a CSI process and information of two subframe sets for the CSI process, via high layer signaling from a serving cell, the two subframe sets with different interference characteristics; and when CSI reference resource of the two subframe sets is valid, performing interference measurement for the CSI of the CSI process configured by the higher layer and reporting the CSI related with one of the two subframe sets based on the information of IMRs, wherein the interference measurement for the CSI is configured to be derived using an IMR associated with one of the two subframe sets for the CSI process; and when the CSI reference resource of the two subframe sets is invalid, omitting reporting of the CSI corresponding to the CSI process, wherein the CSI reference resource of the two subframe sets is invalid, if usage of the CSI reference resource is changed from downlink to uplink, and wherein the two subframe sets are defined to change uplink-downlink, UL-DL, according to a system load state.
A glass sheet processing method comprising the steps of irradiating a laser beam on a glass sheet such that the laser beam is transmitted through the glass sheet from a surface to a back face of the glass sheet, moving an irradiating position of the laser beam with respect to the glass sheet, and forming a cleavage diagonally connected to a surface of the glass sheet with thermal stress that is generated by irradiating the laser beam, the glass sheet processing method being characterized in that: each of an irradiation area of the laser beam on the surface of the glass sheet that is irradiated with the laser beam emitted from a light source, and an irradiation area of the laser beam on the back face that is irradiated with the laser beam that has been transmitted through the surface is arranged to have an asymmetrical power density distribution in a case where each irradiation area includes a peak position of a power density of the laser beam, the asymmetrical power density distribution of each irradiation area being asymmetrical with respect to a reference line that passes through the peak position of the irradiation area and is parallel to a moving direction of the peak position; and an asymmetrical shape in a case where each irradiation area does not include a peak position of a power density of the laser beam, the asymmetrical shape of each irradiation area being asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position. each of an irradiation area of the laser beam on the surface of the glass sheet that is irradiated with the laser beam emitted from a light source, and an irradiation area of the laser beam on the back face that is irradiated with the laser beam that has been transmitted through the surface is arranged to have an asymmetrical power density distribution in a case where each irradiation area includes a peak position of a power density of the laser beam, the asymmetrical power density distribution of each irradiation area being asymmetrical with respect to a reference line that passes through the peak position of the irradiation area and is parallel to a moving direction of the peak position; and an asymmetrical shape in a case where each irradiation area does not include a peak position of a power density of the laser beam, the asymmetrical shape of each irradiation area being asymmetrical with respect to a reference line that passes through a centroid position of the irradiation area and is parallel to a moving direction of the centroid position.
A semiconductor light emitting module comprising: a plurality of semiconductor light emitting elements; a plurality of metal plates, wherein a respective semiconductor light emitting element of the plurality of semiconductor light emitting elements is disposed in contact with a respective surface of each of the plurality of metal plates; and a single printed board covering a certain portion of the respective surface of each of the plurality of metal plates excluding portions of the disposed respective semiconductor light emitting elements and neighborhoods of the disposed respective semiconductor light emitting elements, wherein the single printed board is electrically connected to each of the respective semiconductor light emitting elements for supplying electric power, and the single printed board connects the plurality of metal plates to each other, characterized in that the respective certain portion of the respective surface of each of the plurality of metal plates excluding portions of the disposed respective semiconductor light emitting elements and neighborhoods of the disposed respective semiconductor light emitting elements covered by the single printed board has an area smaller than the respective surface of each of the plurality of metal plates, so as to expose another portion of the respective surface of each of the plurality of metal plates on which the respective semiconductor light emitting elements are disposed. a plurality of semiconductor light emitting elements; a plurality of metal plates, wherein a respective semiconductor light emitting element of the plurality of semiconductor light emitting elements is disposed in contact with a respective surface of each of the plurality of metal plates; and a single printed board covering a certain portion of the respective surface of each of the plurality of metal plates excluding portions of the disposed respective semiconductor light emitting elements and neighborhoods of the disposed respective semiconductor light emitting elements, wherein the single printed board is electrically connected to each of the respective semiconductor light emitting elements for supplying electric power, and the single printed board connects the plurality of metal plates to each other, characterized in that the respective certain portion of the respective surface of each of the plurality of metal plates excluding portions of the disposed respective semiconductor light emitting elements and neighborhoods of the disposed respective semiconductor light emitting elements covered by the single printed board has an area smaller than the respective surface of each of the plurality of metal plates, so as to expose another portion of the respective surface of each of the plurality of metal plates on which the respective semiconductor light emitting elements are disposed.
An energy activatable material for use in the treatment of a sebaceous gland disorder, wherein a) said energy activatable material is a chromophore, is suitable for delivery to the opening to the infundibulum or to a pilosebaceous unit, and is activated by a species of energy which penetrates outer layers of epidermis, and wherein b) said energy activatable material is compounded such that upon topical application to a section of skin, a sufficient amount of said material infiltrates into spaces about the infundibulum and selectively concentrates about said infundibulum or infiltrates the pilosebaceous unit, and wherein c) said treatment is topically applying said energy activatable material to a section of skin afflicted with a sebaceous gland disorder and exposing the section of skin to pulsed energy characterized by an energy density no greater than 100 J/cm 2 causing said material to become photothermally activated to effectively treat a sebaceous gland disorder while there is minimal to no destruction of normal adjacent epidermal and dermal structures. a) said energy activatable material is a chromophore, is suitable for delivery to the opening to the infundibulum or to a pilosebaceous unit, and is activated by a species of energy which penetrates outer layers of epidermis, and wherein b) said energy activatable material is compounded such that upon topical application to a section of skin, a sufficient amount of said material infiltrates into spaces about the infundibulum and selectively concentrates about said infundibulum or infiltrates the pilosebaceous unit, and wherein c) said treatment is topically applying said energy activatable material to a section of skin afflicted with a sebaceous gland disorder and exposing the section of skin to pulsed energy characterized by an energy density no greater than 100 J/cm 2 causing said material to become photothermally activated to effectively treat a sebaceous gland disorder while there is minimal to no destruction of normal adjacent epidermal and dermal structures.
A cleaning liquid for a water-based ink that comprises a pigment and a water-insoluble polymer, said cleaning liquid comprising an acetylene glycol having an average molar number of addition of ethyleneoxide of not less than 0 mol and not more than 2 mol, at least one compound selected from the group consisting of (b-1) an acetylene glycol having an average molar number of addition of ethyleneoxide of not less than 4 mol and (b-2) a polyethylene glycol alkyl ether comprising an alkyl group having not less than 8 carbon atoms, a water-soluble organic solvent and water, in which the organic solvent has a solubility in water of not less than 10 ml measured by dissolving the organic solvent in 100 ml of water at 25°C, the water-soluble organic solvent comprises at least one water-soluble organic solvent having a boiling point of not lower than 90°C; a boiling point of the water-soluble organic solvent is not higher than 220°C in terms of a weighted mean value of boiling points of respective water-soluble organic solvents therein which are weighted by contents (% by mass) of the respective water-soluble organic solvents; and a content of the water-soluble organic solvent in the cleaning liquid is not less than 1% by mass and not more than 20% by mass. the organic solvent has a solubility in water of not less than 10 ml measured by dissolving the organic solvent in 100 ml of water at 25°C, the water-soluble organic solvent comprises at least one water-soluble organic solvent having a boiling point of not lower than 90°C; a boiling point of the water-soluble organic solvent is not higher than 220°C in terms of a weighted mean value of boiling points of respective water-soluble organic solvents therein which are weighted by contents (% by mass) of the respective water-soluble organic solvents; and a content of the water-soluble organic solvent in the cleaning liquid is not less than 1% by mass and not more than 20% by mass.