Method for producing a power semiconductor module, - in which a power semiconductor circuit is formed with at least one first contact region for making electrical contact with said circuit, - in which a contact element with at least one first contact end (33, 34) is furthermore formed for making electrical contact with the power semiconductor circuit, - in which at least the first contact end (33, 34) is mechanically and electrically connected to the first contact region to form a first contact by means of ultrasonic welding, - by virtue of a sonotrode that is used for the ultrasonic welding operation also being used for joining the contact ends (33, 34) with the contact regions and consequently for joining the contacts (40, 42), wherein solid copper or primarily copper-containing current taps are used as contact elements, having a material thickness within the range of approximately 0.1 mm to approximately 3.0 mm and having a current-carrying capacity within the range of approximately 50 A to approximately 2000 A, - wherein at least some of the contact regions are formed by a DCB substrate with a copper or primarily copper-containing layer having a material thickness within the range of approximately 0.1 mm to approximately 1.0 mm, - wherein an ultrasonic welding power within the range of approximately 300 W to approximately 10 kW is used, and - wherein a normal force to or for the sonotrode within the range of approximately 500 N to approximately 3500 N is used as joining force; - in which, prior to the actual ultrasonic welding operation, the sonotrode is lowered onto the contact region, such that the respective contact end (33, 34) is thereby pressed under force or pressure onto the surface of the respective contact region, and the sonotrode is activated only after the respective contact end (33, 34) has been pressed onto the contact region; and - in which, in the vicinity of edge regions of the contact regions, during ultrasonic welding, a welding direction and/or vibration direction is used which runs essentially parallel to the direction of the respective edge region in order to avoid detachment of the contact region at the DCB substrate. - in which a power semiconductor circuit is formed with at least one first contact region for making electrical contact with said circuit, - in which a contact element with at least one first contact end (33, 34) is furthermore formed for making electrical contact with the power semiconductor circuit, - in which at least the first contact end (33, 34) is mechanically and electrically connected to the first contact region to form a first contact by means of ultrasonic welding, - by virtue of a sonotrode that is used for the ultrasonic welding operation also being used for joining the contact ends (33, 34) with the contact regions and consequently for joining the contacts (40, 42), wherein solid copper or primarily copper-containing current taps are used as contact elements, having a material thickness within the range of approximately 0.1 mm to approximately 3.0 mm and having a current-carrying capacity within the range of approximately 50 A to approximately 2000 A, - wherein at least some of the contact regions are formed by a DCB substrate with a copper or primarily copper-containing layer having a material thickness within the range of approximately 0.1 mm to approximately 1.0 mm, - wherein an ultrasonic welding power within the range of approximately 300 W to approximately 10 kW is used, and - wherein a normal force to or for the sonotrode within the range of approximately 500 N to approximately 3500 N is used as joining force; - in which, prior to the actual ultrasonic welding operation, the sonotrode is lowered onto the contact region, such that the respective contact end (33, 34) is thereby pressed under force or pressure onto the surface of the respective contact region, and the sonotrode is activated only after the respective contact end (33, 34) has been pressed onto the contact region; and - in which, in the vicinity of edge regions of the contact regions, during ultrasonic welding, a welding direction and/or vibration direction is used which runs essentially parallel to the direction of the respective edge region in order to avoid detachment of the contact region at the DCB substrate.