A light emitting diode comprising: a semiconductor structure layer (120, 125) comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; and a plurality of lower refractive index layers (171, 173) disposed on an outer surface of the semiconductor structure layer (120, 125), wherein the lower refractive index layers (171, 173) comprise a first lower refractive index layer having a first refractive index lower than a refractive index of the semiconductor structure layer (120,125) on a surface of the semiconductor structure layer (120,125); wherein the lower refractive index layers (171, 173) further comprise a second lower refractive index layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive index layer, the second refractive index of the second lower refractive index layer is 1.5 or less, the second lower refractive index layer is disposed on an outer surface thereof, and wherein the first lower refractive index layer is formed of a transmissive and insulating material, wherein the light emitting diode further comprises a substrate comprising a transparent material under the semiconductor structure layer (120,125), characterized in that the second lower refractive index layer disposed on the outer surface comprises a plurality of protrusions and a metallic oxide powder, in that the second lower refractive index layer extends on a lateral side of the substrate, wherein the plurality of protrusions are further disposed along a lateral side of the semiconductor structure layer (120,125) and the lateral side of the substrate. a semiconductor structure layer (120, 125) comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; and a plurality of lower refractive index layers (171, 173) disposed on an outer surface of the semiconductor structure layer (120, 125), wherein the lower refractive index layers (171, 173) comprise a first lower refractive index layer having a first refractive index lower than a refractive index of the semiconductor structure layer (120,125) on a surface of the semiconductor structure layer (120,125); wherein the lower refractive index layers (171, 173) further comprise a second lower refractive index layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive index layer, the second refractive index of the second lower refractive index layer is 1.5 or less, the second lower refractive index layer is disposed on an outer surface thereof, and wherein the first lower refractive index layer is formed of a transmissive and insulating material, wherein the light emitting diode further comprises a substrate comprising a transparent material under the semiconductor structure layer (120,125), characterized in that the second lower refractive index layer disposed on the outer surface comprises a plurality of protrusions and a metallic oxide powder, in that the second lower refractive index layer extends on a lateral side of the substrate, wherein the plurality of protrusions are further disposed along a lateral side of the semiconductor structure layer (120,125) and the lateral side of the substrate.