A manufacturing method for an n-type bifacial cell, comprising: a step S1 of performing treatment on an upper surface and a lower surface of an n-type silicon wafer by using an alkaline solution; a step S2 of evenly coating a boron source on the upper surface of the n-type silicon wafer in a spin coating manner, and performing boron diffusion in a furnace tube; wherein in the step S2, the boron diffusion is performed in the furnace tube under atmosphere of mixed gases of oxygen and nitrogen, wherein a volume ratio of oxygen to nitrogen ranges from 1:5 to 1:20; and a condition for performing the boron diffusion in the furnace tube comprises: a diffusion temperature ranging from 850°C to 1100°C, diffusion time ranging from 45min to 2h, and a diffusion sheet resistance ranging from 40Ω to 100Ω; a step S3 of removing by-product borosilicate glass generated in the step S2 of boron diffusion, and manufacturing a mask on a surface of diffused boron; a step S4 of performing phosphorus diffusion on the lower surface of the n-type silicon wafer, and forming a high-low-junction structure on the lower surface; a step S5 of removing the mask manufactured in the step S3 and by-product phosphorosilicate glass generated in the step S4 of phosphorus diffusion; a step S6 of manufacturing a passivation anti-reflection film made of aluminum oxide and silicon nitride on the surface of the diffused boron, wherein the aluminum oxide is located under the silicon nitride in the passivation anti-reflection film, and manufacturing a silicon nitride passivation anti-reflection film on a surface of diffused phosphorus; and a step S7 of manufacturing an electrode on the passivation anti-reflection film made of aluminum oxide and silicon nitride and on the silicon nitride passivation anti-reflection film to obtain the n-type bifacial cell. a step S1 of performing treatment on an upper surface and a lower surface of an n-type silicon wafer by using an alkaline solution; a step S2 of evenly coating a boron source on the upper surface of the n-type silicon wafer in a spin coating manner, and performing boron diffusion in a furnace tube; wherein in the step S2, the boron diffusion is performed in the furnace tube under atmosphere of mixed gases of oxygen and nitrogen, wherein a volume ratio of oxygen to nitrogen ranges from 1:5 to 1:20; and a condition for performing the boron diffusion in the furnace tube comprises: a diffusion temperature ranging from 850°C to 1100°C, diffusion time ranging from 45min to 2h, and a diffusion sheet resistance ranging from 40Ω to 100Ω; a step S3 of removing by-product borosilicate glass generated in the step S2 of boron diffusion, and manufacturing a mask on a surface of diffused boron; a step S4 of performing phosphorus diffusion on the lower surface of the n-type silicon wafer, and forming a high-low-junction structure on the lower surface; a step S5 of removing the mask manufactured in the step S3 and by-product phosphorosilicate glass generated in the step S4 of phosphorus diffusion; a step S6 of manufacturing a passivation anti-reflection film made of aluminum oxide and silicon nitride on the surface of the diffused boron, wherein the aluminum oxide is located under the silicon nitride in the passivation anti-reflection film, and manufacturing a silicon nitride passivation anti-reflection film on a surface of diffused phosphorus; and a step S7 of manufacturing an electrode on the passivation anti-reflection film made of aluminum oxide and silicon nitride and on the silicon nitride passivation anti-reflection film to obtain the n-type bifacial cell.