A semiconductor device comprising: a plurality of semiconductor structures which include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first recess passing through the second conductive semiconductor layer and the active layer and extending to a partial region of the first conductive semiconductor layer, and a second recess disposed between the plurality of semiconductor structures and passing through the second conductive semiconductor layer, the active layer and the first conductive semiconductor layer; a first insulating layer disposed on a lower surface the second conductive semiconductor layer and extending into the first recess and the second recess; a first electrode disposed in the first recess and electrically coupled to the first conductive semiconductor layer; a reflective layer disposed on a lower surface of the first insulating layer and extending into the first recess and the second recess; a second electrode disposed between the second conductive semiconductor layer and the reflective layer, and electrically coupled to the second conductive semiconductor layer and the reflective layer; and a protrusion part disposed on the second recess above the semiconductor structure, wherein the protrusion part comprises the first insulating layer and the reflective layer, wherein a distance from a surface, on which the first electrode is in contact with the first conductive semiconductor layer in the first recess, to the upper surface of the semiconductor structure is in a range of 300 nm to 500 nm, and wherein the second recess includes a step portion, and a distance between an upper surface of the second electrode and the step portion is equal to a distance between the upper surface of the second electrode and the surface on which the first electrode is in contact with the first conductive semiconductor layer. a plurality of semiconductor structures which include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first recess passing through the second conductive semiconductor layer and the active layer and extending to a partial region of the first conductive semiconductor layer, and a second recess disposed between the plurality of semiconductor structures and passing through the second conductive semiconductor layer, the active layer and the first conductive semiconductor layer; a first insulating layer disposed on a lower surface the second conductive semiconductor layer and extending into the first recess and the second recess; a first electrode disposed in the first recess and electrically coupled to the first conductive semiconductor layer; a reflective layer disposed on a lower surface of the first insulating layer and extending into the first recess and the second recess; a second electrode disposed between the second conductive semiconductor layer and the reflective layer, and electrically coupled to the second conductive semiconductor layer and the reflective layer; and a protrusion part disposed on the second recess above the semiconductor structure, wherein the protrusion part comprises the first insulating layer and the reflective layer, wherein a distance from a surface, on which the first electrode is in contact with the first conductive semiconductor layer in the first recess, to the upper surface of the semiconductor structure is in a range of 300 nm to 500 nm, and wherein the second recess includes a step portion, and a distance between an upper surface of the second electrode and the step portion is equal to a distance between the upper surface of the second electrode and the surface on which the first electrode is in contact with the first conductive semiconductor layer.