A method for forming a conductive via of a semiconductor device component, comprising: forming a via hole extending through a portion of a bond pad carried by an active surface of a substrate, and extending partially into the substrate beneath the bond pad, wherein the substrate comprises a full or partial wafer of semiconductor material; forming a dielectric coating on the surfaces of the via hole and extending onto an edge of the bond pad such that the dielectric coating is continuous with the via hole; forming a base layer including a seed material coating comprising conductive material on surfaces of the substrate and over the dielectric coating on the surfaces of the via hole; removing material of the seed material coating from surfaces of the substrate, such that material of the seed material coating remains on the dielectric coating and on at least a portion of a surface of the bond pad; and selectively depositing conductive material onto the remaining portions of the seed material coating following the act of removing material; the method characterized by forming the dielectric coating by: forming an adhesion layer comprising an oxide on the at least one surface of the via hole; forming a dielectric layer on the adhesion layer, wherein the dielectric layer comprises a low-K dielectric material having a dielectric constant of K≈2; and forming a second adhesion layer comprising an oxide on the dielectric layer, wherein the adhesion layer, the dielectric layer and the second adhesion layer together form the dielectric coating. forming a via hole extending through a portion of a bond pad carried by an active surface of a substrate, and extending partially into the substrate beneath the bond pad, wherein the substrate comprises a full or partial wafer of semiconductor material; forming a dielectric coating on the surfaces of the via hole and extending onto an edge of the bond pad such that the dielectric coating is continuous with the via hole; forming a base layer including a seed material coating comprising conductive material on surfaces of the substrate and over the dielectric coating on the surfaces of the via hole; removing material of the seed material coating from surfaces of the substrate, such that material of the seed material coating remains on the dielectric coating and on at least a portion of a surface of the bond pad; and selectively depositing conductive material onto the remaining portions of the seed material coating following the act of removing material; the method characterized by forming the dielectric coating by: forming an adhesion layer comprising an oxide on the at least one surface of the via hole; forming a dielectric layer on the adhesion layer, wherein the dielectric layer comprises a low-K dielectric material having a dielectric constant of K≈2; and forming a second adhesion layer comprising an oxide on the dielectric layer, wherein the adhesion layer, the dielectric layer and the second adhesion layer together form the dielectric coating. forming an adhesion layer comprising an oxide on the at least one surface of the via hole; forming a dielectric layer on the adhesion layer, wherein the dielectric layer comprises a low-K dielectric material having a dielectric constant of K≈2; and forming a second adhesion layer comprising an oxide on the dielectric layer, wherein the adhesion layer, the dielectric layer and the second adhesion layer together form the dielectric coating.