A manufacturing method of a light emitting device structure which comprises a gallium-containing nitride substrate provided with an epitaxial growth face with a dislocation density of 10 5 /cm 2 or less, and an n-type gallium-containing nitride semiconductor layer or layers,, and, a gallium-containing nitride semiconductor active layer sand a p-type gallium-containing nitride semiconductor layer or layers,, and formed on said substrate by a vapour phase growth, wherein said substrate is obtained from a gallium-containing nitride bulk single crystal prepared by a supercritical ammonia method, comprising the steps of: setting a feedstock mainly composed of gallium-containing nitride or a precursor thereof in a lower-temperature zone in an autoclave for producing supercritical ammonia solvent which contains at least ammonia, and an ion or ions of at least one alkali metal, the molar ratio of the alkali metal ions to other components of the supercritical solution being controlled within a range from 1:200 to 1:2, for dissolving gallium-containing nitride, and setting at least one seed comprised with GaN or a seed selected from a body-centered cubic crystal system Mo or W, a hexagonal closest packing crystal system α-Hf or α-Zr, a tetragonal system diamond, a WC structure crystal system WC or W 2 C, a ZnO structure crystal system SiC, especially α-SiC, TaN, NbN or AlN, a hexagonal (P6/mmm) system AgB 2, AuB 2, HfB 2 or ZrB 2, and a hexagonal (P6 3 /mmc) system γ-MoC, ε-MbN or ZrB 2 in a higher temperature zone in the autoclave wherein the temperature difference between the higher temperature zone and the lower temperature zone is controlled within the temperature range of 100 to 800°C such that the gallium-containing nitride is dissolved in the lower temperature zone and a gallium-containing nitride is recrystallized in the higher temperature zone; dissolving the feedstock in the supercritical ammonia solvent in the lower temperature zone and generating a convection flow from the lower temperature zone to the higher temperature zone to transport the dissolved feed stock; and recrystallizing the dissolved feedstock on the seed in the higher temperature zone at a pressure of 1 to 5.5 kbar. setting a feedstock mainly composed of gallium-containing nitride or a precursor thereof in a lower-temperature zone in an autoclave for producing supercritical ammonia solvent which contains at least ammonia, and an ion or ions of at least one alkali metal, the molar ratio of the alkali metal ions to other components of the supercritical solution being controlled within a range from 1:200 to 1:2, for dissolving gallium-containing nitride, and setting at least one seed comprised with GaN or a seed selected from a body-centered cubic crystal system Mo or W, a hexagonal closest packing crystal system α-Hf or α-Zr, a tetragonal system diamond, a WC structure crystal system WC or W 2 C, a ZnO structure crystal system SiC, especially α-SiC, TaN, NbN or AlN, a hexagonal (P6/mmm) system AgB 2, AuB 2, HfB 2 or ZrB 2, and a hexagonal (P6 3 /mmc) system γ-MoC, ε-MbN or ZrB 2 in a higher temperature zone in the autoclave wherein the temperature difference between the higher temperature zone and the lower temperature zone is controlled within the temperature range of 100 to 800°C such that the gallium-containing nitride is dissolved in the lower temperature zone and a gallium-containing nitride is recrystallized in the higher temperature zone; dissolving the feedstock in the supercritical ammonia solvent in the lower temperature zone and generating a convection flow from the lower temperature zone to the higher temperature zone to transport the dissolved feed stock; and recrystallizing the dissolved feedstock on the seed in the higher temperature zone at a pressure of 1 to 5.5 kbar.