An article of manufacture comprising: a semiconductor comprising: a substrate; an n-doped buried layer adjacent to the substrate; an n-doped region (212, 220, 222) adjacent to the n-doped buried layer and the substrate, the n-doped region (212, 220, 222) comprising a first n-doped region adjacent to the n-doped buried layer and having a first doping concentration, and a last n-doped region having a last doping concentration less than the first doping concentration; and a p-doped region adjacent to the last n-doped region and to the substrate; wherein the article of manufacture is characterized in that: the last n-doped region is not adjacent to the n-doped buried layer; the semiconductor further comprises at least two isolated p-doped regions (214, 218) adjacent to the first n-doped region and the n-doped buried layer, wherein the first n-doped region surrounds the isolated p-doped regions (214, 218) and the isolated p-doped regions (214, 218) are electrically isolated from each other by at least one n-well region; and the article of manufacture further comprises a resistor electrically coupled to the first n-doped region and to the p-doped region. a semiconductor comprising: a substrate; an n-doped buried layer adjacent to the substrate; an n-doped region (212, 220, 222) adjacent to the n-doped buried layer and the substrate, the n-doped region (212, 220, 222) comprising a first n-doped region adjacent to the n-doped buried layer and having a first doping concentration, and a last n-doped region having a last doping concentration less than the first doping concentration; and a p-doped region adjacent to the last n-doped region and to the substrate; a substrate; an n-doped buried layer adjacent to the substrate; an n-doped region (212, 220, 222) adjacent to the n-doped buried layer and the substrate, the n-doped region (212, 220, 222) comprising a first n-doped region adjacent to the n-doped buried layer and having a first doping concentration, and a last n-doped region having a last doping concentration less than the first doping concentration; and a p-doped region adjacent to the last n-doped region and to the substrate; wherein the article of manufacture is characterized in that: the last n-doped region is not adjacent to the n-doped buried layer; the semiconductor further comprises at least two isolated p-doped regions (214, 218) adjacent to the first n-doped region and the n-doped buried layer, wherein the first n-doped region surrounds the isolated p-doped regions (214, 218) and the isolated p-doped regions (214, 218) are electrically isolated from each other by at least one n-well region; and the article of manufacture further comprises a resistor electrically coupled to the first n-doped region and to the p-doped region. the last n-doped region is not adjacent to the n-doped buried layer; the semiconductor further comprises at least two isolated p-doped regions (214, 218) adjacent to the first n-doped region and the n-doped buried layer, wherein the first n-doped region surrounds the isolated p-doped regions (214, 218) and the isolated p-doped regions (214, 218) are electrically isolated from each other by at least one n-well region; and the article of manufacture further comprises a resistor electrically coupled to the first n-doped region and to the p-doped region.