An electronic device (1, 1A, 1B) having a peripheral region, comprising: a substrate; a first metal layer disposed on the substrate; a second metal layer disposed on the substrate; a third metal layer disposed on the substrate; a protrusion structure disposed on the substrate and located entirely in the peripheral region, the protrusion structure comprising a first organic insulating layer, a second organic insulating layer and a third organic insulating layer; a first inorganic insulating layer disposed on the substrate and located between the first organic insulating layer and the substrate; and a second inorganic insulating layer disposed on the second organic insulating layer and the first inorganic insulating layer, wherein the protrusion structure is located between the second inorganic insulating layer and the first inorganic insulating layer; wherein the first metal layer extends into and ends in the protrusion structure, the first organic insulating layer is located between the second organic insulating layer and the substrate, the first metal layer is located between the second organic insulating layer and the third organic insulating layer, the second metal layer is located between the first organic insulating layer and the first inorganic insulating layer, and the first organic insulating layer is overlapped with the second organic insulating layer in a normal direction of the substrate, the third metal layer is located between the first metal layer and the second metal layer, the first organic insulating layer is located between the third metal layer and the second metal layer, the third organic insulating layer is located between the third metal layer and the first metal layer, and the second organic insulating layer is located between the first metal layer and the second inorganic insulating layer, and a width of the protrusion structure is W1, a distance between the first metal layer and an outer edge (S12P) of the protrusion structure is G1, and 0.1 ≦ G1 /W1 ≦ 0.9. a substrate; a first metal layer disposed on the substrate; a second metal layer disposed on the substrate; a third metal layer disposed on the substrate; a protrusion structure disposed on the substrate and located entirely in the peripheral region, the protrusion structure comprising a first organic insulating layer, a second organic insulating layer and a third organic insulating layer; a first inorganic insulating layer disposed on the substrate and located between the first organic insulating layer and the substrate; and a second inorganic insulating layer disposed on the second organic insulating layer and the first inorganic insulating layer, wherein the protrusion structure is located between the second inorganic insulating layer and the first inorganic insulating layer; wherein the first metal layer extends into and ends in the protrusion structure, the first organic insulating layer is located between the second organic insulating layer and the substrate, the first metal layer is located between the second organic insulating layer and the third organic insulating layer, the second metal layer is located between the first organic insulating layer and the first inorganic insulating layer, and the first organic insulating layer is overlapped with the second organic insulating layer in a normal direction of the substrate, the third metal layer is located between the first metal layer and the second metal layer, the first organic insulating layer is located between the third metal layer and the second metal layer, the third organic insulating layer is located between the third metal layer and the first metal layer, and the second organic insulating layer is located between the first metal layer and the second inorganic insulating layer, and a width of the protrusion structure is W1, a distance between the first metal layer and an outer edge (S12P) of the protrusion structure is G1, and 0.1 ≦ G1 /W1 ≦ 0.9.