A semiconductor device package, comprising: a package body (110, 210, 310, 410), the package body having an outer rectangular shape when viewed in a vertical direction from above, the package body comprising a support (111, 211, 311, 411), a first sidewall (112, 212, 312, 412) having the outer rectangular shape, the first sidewall (112, 213, 312, 412) protruding from an edge region of an upper surface of the support (111, 211, 311, 411) to a first thickness in the vertical direction and having a first upper surface of a first width in a horizontal direction, and a second sidewall (113, 213, 313, 413) having the outer rectangular shape, the second sidewall (113, 213, 313, 413) protruding from the first upper surface of the first sidewall (112, 212, 312, 412) to a second thickness in the vertical direction and having a second upper surface of a second width in a horizontal direction, and the support (111, 211, 311, 411), the first sidewall (112, 212, 312, 412), and the second sidewall (113, 213, 313, 413) being formed by one body of a metal; a diffusion unit (120, 220, 320, 420) disposed on the first upper surface of the first sidewall (112, 212, 312, 412) and surrounded by the second sidewall (113, 213, 313, 413); and a vertical cavity surface emitting laser, VCSEL, semiconductor device (130, 230, 330, 430) disposed on the support (111, 211, 311, 411) and disposed under the diffusion unit (120, 220, 320, 420), wherein the first upper surface of the first sidewall comprises a first corner region, a second corner region next to the first corner region, a third corner region next to the second corner region and facing the first corner region, and a fourth corner region next to the third corner region and facing the second corner region, the second sidewall comprises a first guide disposed between the first corner region and the fourth corner region, a second guide disposed between the first corner region and the second corner region, a third guide disposed between the second corner region and the third corner region, and a fourth guide disposed between the third corner region and the fourth corner region, the first, second, third, and fourth guides are not disposed on the first, second, third, and fourth corner regions, whereby the corner regions are formed at corners of the rectangular shape and the guides are formed by the one body of metal, and the diffusion unit is surrounded by the first, second, third, and fourth guides. a package body (110, 210, 310, 410), the package body having an outer rectangular shape when viewed in a vertical direction from above, the package body comprising a support (111, 211, 311, 411), a first sidewall (112, 212, 312, 412) having the outer rectangular shape, the first sidewall (112, 213, 312, 412) protruding from an edge region of an upper surface of the support (111, 211, 311, 411) to a first thickness in the vertical direction and having a first upper surface of a first width in a horizontal direction, and a second sidewall (113, 213, 313, 413) having the outer rectangular shape, the second sidewall (113, 213, 313, 413) protruding from the first upper surface of the first sidewall (112, 212, 312, 412) to a second thickness in the vertical direction and having a second upper surface of a second width in a horizontal direction, and the support (111, 211, 311, 411), the first sidewall (112, 212, 312, 412), and the second sidewall (113, 213, 313, 413) being formed by one body of a metal; a diffusion unit (120, 220, 320, 420) disposed on the first upper surface of the first sidewall (112, 212, 312, 412) and surrounded by the second sidewall (113, 213, 313, 413); and a vertical cavity surface emitting laser, VCSEL, semiconductor device (130, 230, 330, 430) disposed on the support (111, 211, 311, 411) and disposed under the diffusion unit (120, 220, 320, 420), wherein the first upper surface of the first sidewall comprises a first corner region, a second corner region next to the first corner region, a third corner region next to the second corner region and facing the first corner region, and a fourth corner region next to the third corner region and facing the second corner region, the second sidewall comprises a first guide disposed between the first corner region and the fourth corner region, a second guide disposed between the first corner region and the second corner region, a third guide disposed between the second corner region and the third corner region, and a fourth guide disposed between the third corner region and the fourth corner region, the first, second, third, and fourth guides are not disposed on the first, second, third, and fourth corner regions, whereby the corner regions are formed at corners of the rectangular shape and the guides are formed by the one body of metal, and the diffusion unit is surrounded by the first, second, third, and fourth guides.