A manufacturing method of a semiconductor device, the method comprising: forming an insulating layer on a surface of a silicon carbide (SiC) semiconductor substrate; forming a resist layer having an opening on a surface of the insulating layer; removing the insulating layer in an area exposed through the opening of the resist layer; forming an electrode metal layer by depositing metal as an electrode material on the surface of the SiC semiconductor substrate and a surface of the resist layer in a state where the resist layer is formed on the insulating layer after the insulating layer is removed; removing the resist layer on which the electrode metal layer is deposited after the electrode metal layer is formed; widening a gap between an inner wall surface of an opening formed in the insulating layer and the electrode metal layer by etching the insulating layer after the resist layer is removed; and forming an ohmic contact between the electrode metal layer and the SiC semiconductor substrate by heating the SiC semiconductor substrate and the electrode metal layer after the etching is performed wherein the forming of the electrode metal layer includes: forming an ohmic electrode layer by depositing a metal material which forms an ohmic contact with the SiC semiconductor substrate on the surface of the SiC semiconductor substrate and the surface of the resist layer; and forming a protective metal layer by depositing a metal material which protects the ohmic electrode layer on a face side of the ohmic electrode layer after the ohmic electrode layer is formed, and wherein in the etching of the insulating layer, the side walls of the ohmic electrode layer are further etched, the protective metal layer is not etched, and the heating is performed at a temperature not lower than a melting point of the protective metal layer. forming an insulating layer on a surface of a silicon carbide (SiC) semiconductor substrate; forming a resist layer having an opening on a surface of the insulating layer; removing the insulating layer in an area exposed through the opening of the resist layer; forming an electrode metal layer by depositing metal as an electrode material on the surface of the SiC semiconductor substrate and a surface of the resist layer in a state where the resist layer is formed on the insulating layer after the insulating layer is removed; removing the resist layer on which the electrode metal layer is deposited after the electrode metal layer is formed; widening a gap between an inner wall surface of an opening formed in the insulating layer and the electrode metal layer by etching the insulating layer after the resist layer is removed; and forming an ohmic contact between the electrode metal layer and the SiC semiconductor substrate by heating the SiC semiconductor substrate and the electrode metal layer after the etching is performed wherein the forming of the electrode metal layer includes: forming an ohmic electrode layer by depositing a metal material which forms an ohmic contact with the SiC semiconductor substrate on the surface of the SiC semiconductor substrate and the surface of the resist layer; and forming a protective metal layer by depositing a metal material which protects the ohmic electrode layer on a face side of the ohmic electrode layer after the ohmic electrode layer is formed, and wherein in the etching of the insulating layer, the side walls of the ohmic electrode layer are further etched, the protective metal layer is not etched, and the heating is performed at a temperature not lower than a melting point of the protective metal layer. forming an ohmic electrode layer by depositing a metal material which forms an ohmic contact with the SiC semiconductor substrate on the surface of the SiC semiconductor substrate and the surface of the resist layer; and forming a protective metal layer by depositing a metal material which protects the ohmic electrode layer on a face side of the ohmic electrode layer after the ohmic electrode layer is formed, and wherein in the etching of the insulating layer, the side walls of the ohmic electrode layer are further etched, the protective metal layer is not etched, and the heating is performed at a temperature not lower than a melting point of the protective metal layer.