An imaging apparatus (10,10A) comprising: a first structure and a second structure, wherein the first structure includes: a first substrate (21, 121); a plurality of temperature detection devices (15, 115) formed on the first substrate (21, 121), arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices (15, 115); and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices (15, 115), the second structure includes: a second substrate; and a drive circuit provided on the second substrate and covered with a covering layer, the first substrate (21, 121) is bonded to the covering layer, a cavity is provided between each temperature detection device (15, 115) and the covering layer, and the drive lines and the signal lines are electrically connected to the drive circuit, wherein a partition wall (23, 123) is formed on a portion of the first substrate (21, 121) positioned between a temperature detection device (15, 115) and another temperature detection device (15, 115), a bottom of the partition wall is bonded to the covering layer, characterized in that a sidewall of the partition wall (23, 123) includes at least one material layer selected from a group comprising an insulative material layer, a metal material layer, an alloy material layer, and a carbon material layer, for reflecting an incident infrared ray, and wherein the temperature detection devices (15, 115) include pn junction diodes or ceramic resistive devices. a first structure and a second structure, wherein the first structure includes: a first substrate (21, 121); a plurality of temperature detection devices (15, 115) formed on the first substrate (21, 121), arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices (15, 115); and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices (15, 115), a first substrate (21, 121); a plurality of temperature detection devices (15, 115) formed on the first substrate (21, 121), arranged in a 2D matrix shape in a first direction and in a second direction different from the first direction, and configured to detect a temperature on the basis of an infrared ray; a plurality of drive lines arranged in the first direction and connected with the plurality of temperature detection devices (15, 115); and a plurality of signal lines arranged in the second direction and connected with the plurality of temperature detection devices (15, 115), the second structure includes: a second substrate; and a drive circuit provided on the second substrate and covered with a covering layer, the first substrate (21, 121) is bonded to the covering layer, a second substrate; and a drive circuit provided on the second substrate and covered with a covering layer, the first substrate (21, 121) is bonded to the covering layer, a cavity is provided between each temperature detection device (15, 115) and the covering layer, and the drive lines and the signal lines are electrically connected to the drive circuit, wherein a partition wall (23, 123) is formed on a portion of the first substrate (21, 121) positioned between a temperature detection device (15, 115) and another temperature detection device (15, 115), a bottom of the partition wall is bonded to the covering layer, characterized in that a sidewall of the partition wall (23, 123) includes at least one material layer selected from a group comprising an insulative material layer, a metal material layer, an alloy material layer, and a carbon material layer, for reflecting an incident infrared ray, and wherein the temperature detection devices (15, 115) include pn junction diodes or ceramic resistive devices.