A method for controlling a flow of direct current through an at least partially inductive load by way of driving at least a first semiconductor switch between a load terminal and a supply terminal, a second semiconductor switch between a load terminal and ground, a first semiconductor freewheeling component coupled between the load terminal and the supply terminal, and a second semiconductor freewheeling component coupled between said load terminal and ground, the method comprising - driving a control gate of the at least a first semiconductor switch with a control current (I G) for controlling a resistance of a path between said load terminal connected to said at least partially inductive load and a supply terminal connected to a supply voltage source, and - determining a predetermined time for adjusting the control current in a predictive manner, based on a measurement in one cycle for switching the first semiconductor switch, so as to anticipate a state change of the first semiconductor switch and/or the at least one semiconductor freewheeling component, and - in a later cycle for switching the first semiconductor switch, adjusting the control current (I G) in order to alter the flow of current to said load terminal after said predetermined time wherein after receiving a falling PWM input and for a positive current direction through the load, the method comprises - discharging the gate of the first semiconductor switch with a first discharge current strength and reducing the first discharge current strength to a second discharge current strength after a first predetermined time, - discharging the gate of the first semiconductor switch with the second discharge current strength and reducing after a second predetermined time the second discharge current strength to a third discharge current smaller than a second discharge current strength, - discharging the gate of the first semiconductor switch with a fourth discharge current strength and increasing after a third predetermined time the discharge current strength to a fifth discharge current for rapidly removing the remaining control gate charge, and - charging a control gate of the second semiconductor switch with a first charge current strength and increasing a charge current strength to a second charge current strength after a fourth predetermined time, wherein one or more of the first predetermined time, the second predetermined time, the third predetermined time or the fourth predetermined time are determined in a predictive manner. - driving a control gate of the at least a first semiconductor switch with a control current (I G) for controlling a resistance of a path between said load terminal connected to said at least partially inductive load and a supply terminal connected to a supply voltage source, and - determining a predetermined time for adjusting the control current in a predictive manner, based on a measurement in one cycle for switching the first semiconductor switch, so as to anticipate a state change of the first semiconductor switch and/or the at least one semiconductor freewheeling component, and - in a later cycle for switching the first semiconductor switch, adjusting the control current (I G) in order to alter the flow of current to said load terminal after said predetermined time - discharging the gate of the first semiconductor switch with a first discharge current strength and reducing the first discharge current strength to a second discharge current strength after a first predetermined time, - discharging the gate of the first semiconductor switch with the second discharge current strength and reducing after a second predetermined time the second discharge current strength to a third discharge current smaller than a second discharge current strength, - discharging the gate of the first semiconductor switch with a fourth discharge current strength and increasing after a third predetermined time the discharge current strength to a fifth discharge current for rapidly removing the remaining control gate charge, and - charging a control gate of the second semiconductor switch with a first charge current strength and increasing a charge current strength to a second charge current strength after a fourth predetermined time,