A package structure for LED devices (31A, 31B), comprising: a monolithic silicon substrate (11, 71) having a first surface (111, 711) and a second surface (112, 712) opposite to said first surface (111, 711), and lateral surfaces connecting said first surface (111, 711) and second surface (112, 712), wherein the first surface (111, 711) has a reflective opening (16, 76), the second surface (112, 712) has a plurality of electrode via holes (17, 18, 77, 78) connected to the reflective opening (16, 76), and at least one recess (19, 79) in the second surface (112, 712); a first insulating layer (21A, 21B, 721) overlaid on the first surface (111, 711), the second surface (112, 712) and the at least one recess (19, 79); a reflective layer (22A, 22B, 722) disposed on the reflective opening (16, 76); a second insulating layer (23A, 23B, 723) disposed on the reflective layer (22A, 22B, 722); a first conductive layer (121, 122, 741, 742) disposed on the surface of the second insulating layer (23A, 23B, 723) and inside the electrode via holes (17, 18, 77, 78); a second conductive layer (131, 132, 751, 752) disposed on the second surface (112, 712) and inside the electrode via holes (17, 18, 77, 78), the second conductive layer (131, 132, 751, 752) being in contact with the first conductive layer (121, 122, 741, 742); and an LED die (31A, 31B) fixed inside the reflective opening (16, 76) and electrically connected to the first conductive layer (121, 122, 741, 742), wherein the electrode via holes penetrate through the silicon substrate to reach the reflective opening, the at least one recess (19, 79) is located at an external lateral side of the silicon substrate (11, 71) with respect to the electrode via holes (17, 18, 77, 78), and the second conductive layer (131, 132, 751, 752) is located outside the at least one recess (19, 79), at least one recess (19, 79) formed by removing a lateral portion of the second surface (112, 712) to form a stepped second surface extending to a lateral surface, the at least one recess (19, 79) being for containing solder and preventing the solder from flowing to lateral surfaces of the silicon substrate (11, 71). a monolithic silicon substrate (11, 71) having a first surface (111, 711) and a second surface (112, 712) opposite to said first surface (111, 711), and lateral surfaces connecting said first surface (111, 711) and second surface (112, 712), wherein the first surface (111, 711) has a reflective opening (16, 76), the second surface (112, 712) has a plurality of electrode via holes (17, 18, 77, 78) connected to the reflective opening (16, 76), and at least one recess (19, 79) in the second surface (112, 712); a first insulating layer (21A, 21B, 721) overlaid on the first surface (111, 711), the second surface (112, 712) and the at least one recess (19, 79); a reflective layer (22A, 22B, 722) disposed on the reflective opening (16, 76); a second insulating layer (23A, 23B, 723) disposed on the reflective layer (22A, 22B, 722); a first conductive layer (121, 122, 741, 742) disposed on the surface of the second insulating layer (23A, 23B, 723) and inside the electrode via holes (17, 18, 77, 78); a second conductive layer (131, 132, 751, 752) disposed on the second surface (112, 712) and inside the electrode via holes (17, 18, 77, 78), the second conductive layer (131, 132, 751, 752) being in contact with the first conductive layer (121, 122, 741, 742); and an LED die (31A, 31B) fixed inside the reflective opening (16, 76) and electrically connected to the first conductive layer (121, 122, 741, 742),