A trenched semiconductor structure, comprising: a semiconductor substrate doped with impurities of a first conductive type having a first impurity concentration; an epitaxial layer doped with impurities of the first conductive type of a second impurity concentration, formed on the semiconductor substrate; a plurality of active region trenches, formed in the epitaxial layer; at least a termination region trench, formed in the epitaxial layer and away from the active region trenches; an ion implantation layer, formed in a bottom of the active region trenches by doping impurities of a second conductive type; a termination region dielectric layer, lining the termination region trench and partly formed on the epitaxial layer; an active region dielectric layer, covering the ion implantation region in the active region trenches; and a first polysilicon layer, covering the active region dielectric layer and filling the active region trenches; a Schottky barrier layer formed on the epitaxial layer, on the active region trenches and on the termination region dielectric layer; a second polysilicon layer, formed in the termination region trench between the Schottky barrier layer and the termination region dielectric layer; wherein, the first impurity concentration is greater than the second impurity concentration, and a depth of the termination region trench is greater than that of the active region trenches and close to a depth of a depletion region under reverse breakdown, and wherein a width of the active region trenches is ranged between 0.6μm and 1.5μm, and a depth thereof is ranged between 1.5μm and 3μm, and wherein a width of the termination region trench is ranged between 5μm and 25μm, and the depth thereof is ranged between 5μm and 12μm. a semiconductor substrate doped with impurities of a first conductive type having a first impurity concentration; an epitaxial layer doped with impurities of the first conductive type of a second impurity concentration, formed on the semiconductor substrate; a plurality of active region trenches, formed in the epitaxial layer; at least a termination region trench, formed in the epitaxial layer and away from the active region trenches; an ion implantation layer, formed in a bottom of the active region trenches by doping impurities of a second conductive type; a termination region dielectric layer, lining the termination region trench and partly formed on the epitaxial layer; an active region dielectric layer, covering the ion implantation region in the active region trenches; and a first polysilicon layer, covering the active region dielectric layer and filling the active region trenches; a Schottky barrier layer formed on the epitaxial layer, on the active region trenches and on the termination region dielectric layer; a second polysilicon layer, formed in the termination region trench between the Schottky barrier layer and the termination region dielectric layer; wherein, the first impurity concentration is greater than the second impurity concentration, and a depth of the termination region trench is greater than that of the active region trenches and close to a depth of a depletion region under reverse breakdown, and wherein a width of the active region trenches is ranged between 0.6μm and 1.5μm, and a depth thereof is ranged between 1.5μm and 3μm, and wherein a width of the termination region trench is ranged between 5μm and 25μm, and the depth thereof is ranged between 5μm and 12μm.