A gas property sensor, comprising: a semiconductor measuring device having defined therein: a cavity that is filled with a gas and has an opening; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume; a pressure generator disposed in the cavity; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, characterized in that the measuring device comprises: a substrate having first and second surfaces (212, 214); a first semiconductor chip portion mounted on the first surface of the substrate, the cavity being defined within the first semiconductor chip portion; and a second semiconductor chip portion mounted on the first semiconductor chip portion, the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device, wherein the cavity is open to the channel via the opening, wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator, to cause gas to flow through the flow channel a semiconductor measuring device having defined therein: a cavity that is filled with a gas and has an opening; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume; a pressure generator disposed in the cavity; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, a cavity that is filled with a gas and has an opening; and a channel has a first end in fluid communication with the cavity via the opening of the cavity and the channel has a second, opposite end in fluid communication with a first gas volume; a pressure generator disposed in the cavity; and one or more flow-sensitive elements located in the channel for determining a gas flow parameter of the gas, characterized in that the measuring device comprises: a substrate having first and second surfaces (212, 214); a first semiconductor chip portion mounted on the first surface of the substrate, the cavity being defined within the first semiconductor chip portion; and a second semiconductor chip portion mounted on the first semiconductor chip portion, the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device, wherein the cavity is open to the channel via the opening, wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator, to cause gas to flow through the flow channel a substrate having first and second surfaces (212, 214); a first semiconductor chip portion mounted on the first surface of the substrate, the cavity being defined within the first semiconductor chip portion; and a second semiconductor chip portion mounted on the first semiconductor chip portion, the channel being defined within at least one of the first and the second semiconductor chip portions wherein the cavity defines a partially enclosed space in the semiconductor measuring device, wherein the cavity is open to the channel via the opening, wherein the cavity encloses a volume configured for generating a predetermined overpressure therein; via actuation of said pressure generator, to cause gas to flow through the flow channel