Radio-frequency assembly, RF assembly,, having: a signal source having a semiconductor amplifier output; an impedance matching filter with a first interface and a second interface; and a radio-frequency waveguide, RF waveguide,; wherein the first interface is communicatively coupled to the signal source by means of one or more lines (23, 24) and a transmission path of the RF assembly in order to be able to transmit a radio-frequency signal, RF signal, from the signal source to the impedance matching filter; wherein the second interface is communicatively coupled to the RF waveguide in order to be able to transmit an RF signal from the impedance matching filter to the RF waveguide; wherein a first impedance value at the first interface corresponds to an impedance value at the semiconductor amplifier output; wherein a second impedance value at the second interface corresponds to an impedance value at the RF waveguide; wherein the first impedance value and the second impedance value have different values; wherein the RF assembly furthermore has a baseplate; wherein the semiconductor amplifier output is arranged on the baseplate; and characterized in that the semiconductor amplifier output, for the purpose of direct-current energy supply, is galvanically coupled via said one or more lines (23, 24) to the transmission path on the baseplate; wherein the transmission path has a capacitive coupling element situated opposite the first interface and arranged for capacitively coupling radio-frequency signals into the first interface; wherein the capacitive coupling element is galvanically isolated from the first interface and spaced apart therefrom by a gap. a signal source having a semiconductor amplifier output; an impedance matching filter with a first interface and a second interface; and a radio-frequency waveguide, RF waveguide,; wherein the first interface is communicatively coupled to the signal source by means of one or more lines (23, 24) and a transmission path of the RF assembly in order to be able to transmit a radio-frequency signal, RF signal, from the signal source to the impedance matching filter; wherein the second interface is communicatively coupled to the RF waveguide in order to be able to transmit an RF signal from the impedance matching filter to the RF waveguide; wherein a first impedance value at the first interface corresponds to an impedance value at the semiconductor amplifier output; wherein a second impedance value at the second interface corresponds to an impedance value at the RF waveguide; wherein the first impedance value and the second impedance value have different values; wherein the RF assembly furthermore has a baseplate; wherein the semiconductor amplifier output is arranged on the baseplate; and characterized in that the semiconductor amplifier output, for the purpose of direct-current energy supply, is galvanically coupled via said one or more lines (23, 24) to the transmission path on the baseplate; wherein the transmission path has a capacitive coupling element situated opposite the first interface and arranged for capacitively coupling radio-frequency signals into the first interface; wherein the capacitive coupling element is galvanically isolated from the first interface and spaced apart therefrom by a gap.