A power semiconductor module, comprising a base plate with four substrates (11, 13, 15, 17) located on said base plate, wherein an electronic circuit is provided on said substrates (11, 13, 15, 17) with each substrate (11, 13, 15, 17) carrying a part of the electronic circuit, electrical connectors comprising a DC+ power terminal, a DC- power terminal, an AC power terminal and control terminals are located on the substrates (11, 13, 15, 17), whereby the substrates (11, 13, 15, 17) carry respective fixing positions (14', 16', 18', 20', 22') for fixing the respective power terminals (14, 16, 18) and for receiving a gate conductor and an emitter conductor, the power semiconductor module is designed as a half-bridge module comprising a first amount of switching power semiconductor devices (26, 28) being diodes and IGBTs and a second amount of switching power semiconductor devices (32, 34) being diodes and IGBTs, the base plate comprises a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being symmetrically arranged opposite to the first side, the DC+ power terminal, the DC-power terminal, the AC power terminal and the control terminals are positioned in the contact area, the first amount of switching power semiconductor devices (26, 28) is positioned in the first device area and the second amount of switching power semiconductor devices (32, 34) is positioned in the second device area, all the power semiconductor devices (26, 28) in the first device area are located in two parallel lines (42, 44) being aligned parallel to the width of the base plate and thus essentially perpendicular to the current flow between the switching power semiconductor devices (26, 28), all the power semiconductor devices (32, 34) in the second device area are located in two parallel lines (46, 48) being aligned parallel to the width of the base plate and thus essentially perpendicular to the current flow between the switching power semiconductor devices (32, 34), and the IGBTs and the diodes are arranged such, that all IGBTs are located in a first line (44, 46) of said two parallel lines in each device area (38, 40) being aligned parallel to the width of the base plate, and that all diodes are provided in a second line (42, 48) of said two parallel lines in each device area (38, 40) being aligned parallel to the width of the base plate. a base plate with four substrates (11, 13, 15, 17) located on said base plate, wherein an electronic circuit is provided on said substrates (11, 13, 15, 17) with each substrate (11, 13, 15, 17) carrying a part of the electronic circuit, electrical connectors comprising a DC+ power terminal, a DC- power terminal, an AC power terminal and control terminals are located on the substrates (11, 13, 15, 17), whereby the substrates (11, 13, 15, 17) carry respective fixing positions (14', 16', 18', 20', 22') for fixing the respective power terminals (14, 16, 18) and for receiving a gate conductor and an emitter conductor, the power semiconductor module is designed as a half-bridge module comprising a first amount of switching power semiconductor devices (26, 28) being diodes and IGBTs and a second amount of switching power semiconductor devices (32, 34) being diodes and IGBTs, the base plate comprises a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being symmetrically arranged opposite to the first side, the DC+ power terminal, the DC-power terminal, the AC power terminal and the control terminals are positioned in the contact area, the first amount of switching power semiconductor devices (26, 28) is positioned in the first device area and the second amount of switching power semiconductor devices (32, 34) is positioned in the second device area, all the power semiconductor devices (26, 28) in the first device area are located in two parallel lines (42, 44) being aligned parallel to the width of the base plate and thus essentially perpendicular to the current flow between the switching power semiconductor devices (26, 28), all the power semiconductor devices (32, 34) in the second device area are located in two parallel lines (46, 48) being aligned parallel to the width of the base plate and thus essentially perpendicular to the current flow between the switching power semiconductor devices (32, 34), and the IGBTs and the diodes are arranged such, that all IGBTs are located in a first line (44, 46) of said two parallel lines in each device area (38, 40) being aligned parallel to the width of the base plate, and that all diodes are provided in a second line (42, 48) of said two parallel lines in each device area (38, 40) being aligned parallel to the width of the base plate.