A memory device for use in a computer system, the memory device including: a memory array, a first memory cell (201-1; 301-1) of the memory array coupled to a first sense line thereof and a second memory cell (201-2; 301-0) of the memory array coupled to a second sense line (205-2; 305-0) thereof; sensing circuitry including first sensing circuitry (206-1, 231-1; 306-1; 331-1) and second sensing circuitry (206-2, 231-2; 306-0, 331-0) corresponding to the first and second memory cells, respectively, the first sensing circuitry (206-1, 231-1; 306-1; 331-1) having a first sense amplifier (206-1; 306-1) and a first accumulator (231-1; 331-1) and the second sensing circuitry (206-2, 231-2; 306-0, 331-0) having a second sense amplifier (206-2; 306-0) and a second accumulator (231-2; 331-0); a first isolation device (251-1; 351-1) located between the first memory cell (201-1; 301-0) and the first sensing circuitry (206-1, 231-1; 306-1, 331-1); and a second isolation device (253-1; 355-1) coupled to the first sense line (205-1; 305-1) and to the second sense line (205-2; 305-0); a memory controller including a shift controller cooperative with the memory array to control operation of the first and the second isolation devices (251-1 & 251-2; 351-1 & 355-1) to shift data in the memory array without transferring the data via an input/output line of the memory array by: enabling the first isolation device (251-1; 351-1); sensing a data value stored in the first memory cell (201-1; 301-1), upon activation of a selected access line that is coupled to the first memory cell (201-1; 301-1), while the first isolation device (251-1; 351-1) is enabled and storing the sensed data value in the first accumulator (231-1; 331-1); enabling the second isolation device (253-1; 355-1); and transferring the sensed data value from the first accumulator (231-1; 331-1) to the second memory cell (201-2; 301-0) upon activation of a selected access line that is coupled to the second memory cell (201-2; 301-0), while the second isolation device (253-1; 355-1) is enabled. a memory array, a first memory cell (201-1; 301-1) of the memory array coupled to a first sense line thereof and a second memory cell (201-2; 301-0) of the memory array coupled to a second sense line (205-2; 305-0) thereof; sensing circuitry including first sensing circuitry (206-1, 231-1; 306-1; 331-1) and second sensing circuitry (206-2, 231-2; 306-0, 331-0) corresponding to the first and second memory cells, respectively, the first sensing circuitry (206-1, 231-1; 306-1; 331-1) having a first sense amplifier (206-1; 306-1) and a first accumulator (231-1; 331-1) and the second sensing circuitry (206-2, 231-2; 306-0, 331-0) having a second sense amplifier (206-2; 306-0) and a second accumulator (231-2; 331-0); a first isolation device (251-1; 351-1) located between the first memory cell (201-1; 301-0) and the first sensing circuitry (206-1, 231-1; 306-1, 331-1); and a second isolation device (253-1; 355-1) coupled to the first sense line (205-1; 305-1) and to the second sense line (205-2; 305-0); a memory controller including a shift controller cooperative with the memory array to control operation of the first and the second isolation devices (251-1 & 251-2; 351-1 & 355-1) to shift data in the memory array without transferring the data via an input/output line of the memory array by: enabling the first isolation device (251-1; 351-1); sensing a data value stored in the first memory cell (201-1; 301-1), upon activation of a selected access line that is coupled to the first memory cell (201-1; 301-1), while the first isolation device (251-1; 351-1) is enabled and storing the sensed data value in the first accumulator (231-1; 331-1); enabling the second isolation device (253-1; 355-1); and transferring the sensed data value from the first accumulator (231-1; 331-1) to the second memory cell (201-2; 301-0) upon activation of a selected access line that is coupled to the second memory cell (201-2; 301-0), while the second isolation device (253-1; 355-1) is enabled. enabling the first isolation device (251-1; 351-1); sensing a data value stored in the first memory cell (201-1; 301-1), upon activation of a selected access line that is coupled to the first memory cell (201-1; 301-1), while the first isolation device (251-1; 351-1) is enabled and storing the sensed data value in the first accumulator (231-1; 331-1); enabling the second isolation device (253-1; 355-1); and transferring the sensed data value from the first accumulator (231-1; 331-1) to the second memory cell (201-2; 301-0) upon activation of a selected access line that is coupled to the second memory cell (201-2; 301-0), while the second isolation device (253-1; 355-1) is enabled.