A lasing device (1000, 2000, 3000) for use in an optical interconnect, the lasing device comprising: a first reflector (1300, 2300, 3300) and a second reflector (1100, 2100, 3100); a confinement layer (1020, 2020, 3020), said confinement layer (1020, 2020, 3020) being adapted to confine current within a current-confining aperture (1021, 2021, 3021); an active layer (1220, 2220, 3220) between the first and second reflectors, said active layer comprising a main active region aligned with the current confining aperture (1021, 2021, 3021); wherein the second reflector (1100, 2100, 3100) includes a first reflector region (1140, 2140, 3140) arranged on the current-confining aperture (1021, 2021, 3021) and a second reflector region (1130, 2130, 3130) surrounding the first reflector region (1140, 2140, 3140), the first reflector region (1140, 2140, 3140), the main active region and the first reflector (1300, 2300, 3300) defining a main laser (1400, 2400, 3400), wherein the lasing device (1000, 2000, 3000) further includes an auxiliary active region surrounding the main active region and overlapping the periphery of the main active region, the auxiliary active region being a zone of the active layer including carriers that leaked from the main active region, wherein the second reflector region, the auxiliary active region and the first reflector define an auxiliary laser, wherein the second reflector region (1130, 2130, 3130) and the first reflector (1300, 2300, 3300), are configured to induce stimulated recombination in the auxiliary active region so that a carrier density is clamped within the auxiliary active region and additional stimulated recombination is induced at the periphery of the main active region. a first reflector (1300, 2300, 3300) and a second reflector (1100, 2100, 3100); a confinement layer (1020, 2020, 3020), said confinement layer (1020, 2020, 3020) being adapted to confine current within a current-confining aperture (1021, 2021, 3021); an active layer (1220, 2220, 3220) between the first and second reflectors, said active layer comprising a main active region aligned with the current confining aperture (1021, 2021, 3021); wherein the second reflector (1100, 2100, 3100) includes a first reflector region (1140, 2140, 3140) arranged on the current-confining aperture (1021, 2021, 3021) and a second reflector region (1130, 2130, 3130) surrounding the first reflector region (1140, 2140, 3140), the first reflector region (1140, 2140, 3140), the main active region and the first reflector (1300, 2300, 3300) defining a main laser (1400, 2400, 3400), wherein the lasing device (1000, 2000, 3000) further includes an auxiliary active region surrounding the main active region and overlapping the periphery of the main active region, the auxiliary active region being a zone of the active layer including carriers that leaked from the main active region, wherein the second reflector region, the auxiliary active region and the first reflector define an auxiliary laser, wherein the second reflector region (1130, 2130, 3130) and the first reflector (1300, 2300, 3300), are configured to induce stimulated recombination in the auxiliary active region so that a carrier density is clamped within the auxiliary active region and additional stimulated recombination is induced at the periphery of the main active region.