Solar cell device with a multiple solar cell and a protective diode structure, wherein the multiple solar cell and the protective diode structure have a common rear side surface and front sides separated by a mesa trench, and the common rear side surface comprises an electrically conductive layer and the light enters through the front side into the multiple solar cell, and wherein the multiple solar cell comprises a stack of three or more solar cells (SC1, SC2, SC3) and has an upper solar cell arranged closest to the front side, a lower solar cell arranged closest to the rear side and a middle solar cell and each solar cell (SC1, SC2, SC3) has an n-p transition and a tunnel diode is arranged between adjacent solar cells, and the number of semiconductor layers of the protective diode structure is less than the number of semiconductor layers of the multiple solar cell, but the sequence of the remaining semiconductor layers in the protective diode structure is identical with the sequence of the semiconductor layers of the multiple solar cell, wherein in the case of the protective diode structure at least one upper protective diode and lower protective diode, which is arranged closest to the rear side, are formed and a tunnel diode is arranged between adjacent protective diodes (D1, D2), and the number of n-p transitions in the protective diode structure is less at least by one than the number of n-p transitions of the multiple solar cell, and formed on the front side of the multiple solar cell and the protective diode structure is a respective connecting contact structure containing one or more metal layers and an electrically conductive contact layer (C, C1), which is arranged below the connecting contact structure and above the front side of the multiple solar cell and above the front side of the protective diode structure and consists of several semiconductor layers, and the several semiconductor layers of the contact layer arranged above the front side of the protective diode structure comprise a further tunnel diode, characterised in that the several semiconductor layers of the contact layer arranged above the front side of the multiple solar cell comprise a further tunnel diode. the multiple solar cell and the protective diode structure have a common rear side surface and front sides separated by a mesa trench, and the common rear side surface comprises an electrically conductive layer and the light enters through the front side into the multiple solar cell, and wherein the multiple solar cell comprises a stack of three or more solar cells (SC1, SC2, SC3) and has an upper solar cell arranged closest to the front side, a lower solar cell arranged closest to the rear side and a middle solar cell and each solar cell (SC1, SC2, SC3) has an n-p transition and a tunnel diode is arranged between adjacent solar cells, and the number of semiconductor layers of the protective diode structure is less than the number of semiconductor layers of the multiple solar cell, but the sequence of the remaining semiconductor layers in the protective diode structure is identical with the sequence of the semiconductor layers of the multiple solar cell, wherein in the case of the protective diode structure at least one upper protective diode and lower protective diode, which is arranged closest to the rear side, are formed and a tunnel diode is arranged between adjacent protective diodes (D1, D2), and the number of n-p transitions in the protective diode structure is less at least by one than the number of n-p transitions of the multiple solar cell, and formed on the front side of the multiple solar cell and the protective diode structure is a respective connecting contact structure containing one or more metal layers and an electrically conductive contact layer (C, C1), which is arranged below the connecting contact structure and above the front side of the multiple solar cell and above the front side of the protective diode structure and consists of several semiconductor layers, and the several semiconductor layers of the contact layer arranged above the front side of the protective diode structure comprise a further tunnel diode, characterised in that the several semiconductor layers of the contact layer arranged above the front side of the multiple solar cell comprise a further tunnel diode.