A film deposition device, comprising: a film deposition chamber that accommodates a substrate at a specific position; a first cathode and a second cathode each having a target, the first cathode and the second cathode being disposed next to each other in such an attitude that respective surfaces of the targets face the substrate disposed at the specific position; a magnetic-field formation unit that forms a magnetic field for magnetron sputtering in the vicinity of the surfaces of the respective targets of the first and second cathodes (20A, 20B); a film-deposition power source that is connected to the first and second cathodes (20A, 20B) to apply voltage to the first and second cathodes (20A, 20B); and a shutter capable of making an opening-closing action between a close portion at which the shutter is interposed between the substrate and the surfaces of the respective targets of the first and second cathodes (20A, 20B) to block the surfaces of the respective targets of the first cathode and the second cathode, collectively, from the substrate and an open position at which the shutter opens the space between the substrate and the surfaces of the respective targets of the first and second cathodes (20A, 20B) to allow film deposition on a surface of the substrate to be performed by the targets, wherein the shutter includes a pair of opening-closing members (51, 52) juxtaposed in the same direction as a juxtaposition direction in which the targets of the first and second cathodes (20A, 20B) are juxtaposed, each of the opening-closing members (51, 52) being supported by the film deposition chamber so as to be able to make a rotational movement about a rotational axis perpendicular to the juxtaposition direction to move between the open position and the close portion through the rotational movement, characterized in that the rotational axes are set at respective positions on the side opposite to the opening-closing members (51, 52) across the first and second cathodes (20A, 20B). a film deposition chamber that accommodates a substrate at a specific position; a first cathode and a second cathode each having a target, the first cathode and the second cathode being disposed next to each other in such an attitude that respective surfaces of the targets face the substrate disposed at the specific position; a magnetic-field formation unit that forms a magnetic field for magnetron sputtering in the vicinity of the surfaces of the respective targets of the first and second cathodes (20A, 20B); a film-deposition power source that is connected to the first and second cathodes (20A, 20B) to apply voltage to the first and second cathodes (20A, 20B); and a shutter capable of making an opening-closing action between a close portion at which the shutter is interposed between the substrate and the surfaces of the respective targets of the first and second cathodes (20A, 20B) to block the surfaces of the respective targets of the first cathode and the second cathode, collectively, from the substrate and an open position at which the shutter opens the space between the substrate and the surfaces of the respective targets of the first and second cathodes (20A, 20B) to allow film deposition on a surface of the substrate to be performed by the targets, wherein the shutter includes a pair of opening-closing members (51, 52) juxtaposed in the same direction as a juxtaposition direction in which the targets of the first and second cathodes (20A, 20B) are juxtaposed, each of the opening-closing members (51, 52) being supported by the film deposition chamber so as to be able to make a rotational movement about a rotational axis perpendicular to the juxtaposition direction to move between the open position and the close portion through the rotational movement, characterized in that the rotational axes are set at respective positions on the side opposite to the opening-closing members (51, 52) across the first and second cathodes (20A, 20B).