A semiconductor light emitting device comprising: a light emitting structure including a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer; a first insulating layer on an outer peripheral surface of both of the active layer and the second conductivity type semiconductor layer; a second electrode layer under the second conductivity type semiconductor layer, the second electrode layer in contact with the second conductive type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a conductive support member under the second electrode layer; and a conductive or second insulating layer between the first insulating layer and the second electrode layer, wherein the conductive or second insulating layer is formed on an outer peripheral surface of a top surface of the second electrode layer; wherein the conductive or second insulating layer is formed in the shape of a band or a ring along the outer peripheral surface between the second electrode layer and the first insulating layer; and wherein the conductive or second insulating layer contacts with an outer peripheral surface of a bottom surface of the second conductivity type semiconductor layer, characterized in that the first insulating layer has a thickness less than that of the light emitting structure, wherein the first insulating layer extends from an outer portion of the second conductivity type semiconductor layer to a part of an outer portion of the first conductivity type semiconductor layer, and an upper end of the first insulating layer is extended to a lower portion of the first conductivity type semiconductor layer, such that the first insulating layer is not formed over a whole area of the outer portion of the first conductivity type semiconductor layer; the light emitting structure has an etched area which extends from the outer portion of the second conductivity type semiconductor layer to the lower portion of the first conductivity type semiconductor layer, the conductive layer or second insulating layer contacts with a bottom surface of the first insulating layer under the etched area, and an upper portion of the first conductivity type semiconductor layer is extended on the upper end of the first insulating layer, such that an outer peripheral surface of the upper portion of the first conductive type semiconductor layer is exposed from the first insulating layer; and the conductive or second insulating layer is a transmissive conductive layer. a light emitting structure including a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer; a first insulating layer on an outer peripheral surface of both of the active layer and the second conductivity type semiconductor layer; a second electrode layer under the second conductivity type semiconductor layer, the second electrode layer in contact with the second conductive type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a conductive support member under the second electrode layer; and a conductive or second insulating layer between the first insulating layer and the second electrode layer, wherein the conductive or second insulating layer is formed on an outer peripheral surface of a top surface of the second electrode layer; wherein the conductive or second insulating layer is formed in the shape of a band or a ring along the outer peripheral surface between the second electrode layer and the first insulating layer; and wherein the conductive or second insulating layer contacts with an outer peripheral surface of a bottom surface of the second conductivity type semiconductor layer, characterized in that the first insulating layer has a thickness less than that of the light emitting structure, wherein the first insulating layer extends from an outer portion of the second conductivity type semiconductor layer to a part of an outer portion of the first conductivity type semiconductor layer, and an upper end of the first insulating layer is extended to a lower portion of the first conductivity type semiconductor layer, such that the first insulating layer is not formed over a whole area of the outer portion of the first conductivity type semiconductor layer; the light emitting structure has an etched area which extends from the outer portion of the second conductivity type semiconductor layer to the lower portion of the first conductivity type semiconductor layer, the conductive layer or second insulating layer contacts with a bottom surface of the first insulating layer under the etched area, and an upper portion of the first conductivity type semiconductor layer is extended on the upper end of the first insulating layer, such that an outer peripheral surface of the upper portion of the first conductive type semiconductor layer is exposed from the first insulating layer; and the conductive or second insulating layer is a transmissive conductive layer.