A light emitting diode comprising: a conductive support substrate; a reflective electrode layer having a convex center portion on the conductive support substrate; a protective layer on a peripheral portion of the reflective electrode layer; a second conductivity type semiconductor layer on the reflective electrode layer and the protective layer; an active layer on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; and a first electrode layer on the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer comprise a groove on peripheral portions thereof, wherein the second conductivity type semiconductor layer includes a peripheral portion defined by the groove and extending peripherally from a remainder of the second conductivity type semiconductor layer, the second conductivity type semiconductor layer having a center portion protruding outwardly relative to its peripheral portion, a bottom surface of the center portion of the second conductivity type semiconductor layer being flush with a bottom surface of the peripheral portion of the second conductivity type semiconductor layer, wherein the protective layer comprises a stacked structure including at least two of a n-type semiconductor layer, a p-type semiconductor layer and an undoped semiconductor layer, and wherein the protective layer is vertically overlapped at least by the peripheral portion of the second conductivity type semiconductor layer, a top surface of the protective layer being in direct contact with the bottom surface of the peripheral portion of the second conductivity type semiconductor layer. a conductive support substrate; a reflective electrode layer having a convex center portion on the conductive support substrate; a protective layer on a peripheral portion of the reflective electrode layer; a second conductivity type semiconductor layer on the reflective electrode layer and the protective layer; an active layer on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; and a first electrode layer on the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer comprise a groove on peripheral portions thereof, wherein the second conductivity type semiconductor layer includes a peripheral portion defined by the groove and extending peripherally from a remainder of the second conductivity type semiconductor layer, the second conductivity type semiconductor layer having a center portion protruding outwardly relative to its peripheral portion, a bottom surface of the center portion of the second conductivity type semiconductor layer being flush with a bottom surface of the peripheral portion of the second conductivity type semiconductor layer, wherein the protective layer comprises a stacked structure including at least two of a n-type semiconductor layer, a p-type semiconductor layer and an undoped semiconductor layer, and wherein the protective layer is vertically overlapped at least by the peripheral portion of the second conductivity type semiconductor layer, a top surface of the protective layer being in direct contact with the bottom surface of the peripheral portion of the second conductivity type semiconductor layer.