A method for manufacturing a solar cell, comprising: holding a first conductivity-type silicon powder in a first holding section and holding a second conductivity-type silicon powder in a second holding section; sending a transparent insulation foil and a transparent electrode foil adhered thereto below the holding sections (21, 22) at fixed velocity on a plate by a belt, openings (21 a, 22a) being provided at bottom of the holding sections (21, 22), and disposing the first conductivity-type silicon powder in form of a layer on the transparent electrode foil adhered to the transparent insulation foil from the opening; melting the first conductivity-type powder layer (11 a) by heating to melting point of silicon or higher and cooling the melted layer (11 a) to form a first conductivity-type silicon layer (11 b), or firing the first conductivity-type powder layer (11 a) while compressing by applying heat and pressure to form a first conductivity-type silicon layer (11 b); disposing the second conductivity-type silicon powder on the first conductivity-type silicon layer (11 b) when the first conductivity-type silicon layer (11 b) moves below the second holding section, and forming second conductivity-type silicon powder layer in form of a layer on the first conductivity-type silicon layer (11 b) when the opening is passed; melting the second conductivity-type powder layer by heating to melting point of silicon or higher and cooling the melted layer to form a second conductivity-type silicon layer, or firing the second conductivity-type powder layer while compressing by applying heat and pressure to form a second conductivity-type silicon layer, and forming a PN junction at the interface of both layers (11 b, 12b); and disposing an electrode foil on upper surface of the second conductivity-type silicon layer, adhering the foil on upper surface of the second conductivity-type silicon layer by applying heat with a heater, and continuously forming a solar cell fixed on the transparent insulation foil. holding a first conductivity-type silicon powder in a first holding section and holding a second conductivity-type silicon powder in a second holding section; sending a transparent insulation foil and a transparent electrode foil adhered thereto below the holding sections (21, 22) at fixed velocity on a plate by a belt, openings (21 a, 22a) being provided at bottom of the holding sections (21, 22), and disposing the first conductivity-type silicon powder in form of a layer on the transparent electrode foil adhered to the transparent insulation foil from the opening; melting the first conductivity-type powder layer (11 a) by heating to melting point of silicon or higher and cooling the melted layer (11 a) to form a first conductivity-type silicon layer (11 b), or firing the first conductivity-type powder layer (11 a) while compressing by applying heat and pressure to form a first conductivity-type silicon layer (11 b); disposing the second conductivity-type silicon powder on the first conductivity-type silicon layer (11 b) when the first conductivity-type silicon layer (11 b) moves below the second holding section, and forming second conductivity-type silicon powder layer in form of a layer on the first conductivity-type silicon layer (11 b) when the opening is passed; melting the second conductivity-type powder layer by heating to melting point of silicon or higher and cooling the melted layer to form a second conductivity-type silicon layer, or firing the second conductivity-type powder layer while compressing by applying heat and pressure to form a second conductivity-type silicon layer, and forming a PN junction at the interface of both layers (11 b, 12b); and disposing an electrode foil on upper surface of the second conductivity-type silicon layer, adhering the foil on upper surface of the second conductivity-type silicon layer by applying heat with a heater, and continuously forming a solar cell fixed on the transparent insulation foil.