A solid-state imaging device, comprising: a row drive circuit; a column drive circuit; and a plurality of pixels, each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip, the photodiode being arranged on a first chip, at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein in the pixel circuit, a plurality of N-type transistors (311, 313) that converts the photocurrent into the voltage signal and outputs the voltage signal is further arranged on the first chip, and a P-type transistor that feeds a constant current to any of the plurality of N-type transistors (311, 313) is further arranged on the second chip. a row drive circuit; a column drive circuit; and a plurality of pixels, each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip, the photodiode being arranged on a first chip, at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein each of the plurality of pixels including a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip, a photodiode that photoelectrically converts incident light and generates a photocurrent, a pixel circuit that quantizes a voltage signal corresponding to the photocurrent and outputs a quantized voltage signal as a detection signal, and a connection section (211, 212, 213; 231, 232, 233), the row drive circuit and the column drive circuit being arranged on a second chip, the photodiode being arranged on a first chip, at least a part of the pixel circuit being arranged on the second chip and being electrically connected to the photodiode arranged on the first chip via the connection section (211, 212, 213; 231, 232, 233), wherein in the pixel circuit, a plurality of N-type transistors (311, 313) that converts the photocurrent into the voltage signal and outputs the voltage signal is further arranged on the first chip, and a P-type transistor that feeds a constant current to any of the plurality of N-type transistors (311, 313) is further arranged on the second chip.