A solid state transducer system comprising: a support substrate; a solid state emitter carried by the support substrate, the solid state emitter comprising a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components; and a state device carried by the support substrate and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device comprising: a portion of an epitaxial growth substrate; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter, wherein the separate material has a composition different than that of the first semiconductor component, the second semiconductor component and the active region; and an insulator deposited on a lateral sidewall of the electrostatic discharge device, wherein the state device and the solid state emitter are stacked along a common axis; wherein the solid state transducer system further comprises: a contact electrically coupled to both the second semiconductor component and the epitaxial growth substrate, wherein the contact extends over and is in contact with the second semiconductor component, and is disposed on the epitaxial growth substrate of the electrostatic discharge device and on the insulator, and wherein the contact is formed from a transparent material. a support substrate; a solid state emitter carried by the support substrate, the solid state emitter comprising a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components; and a state device carried by the support substrate and positioned to detect a state of at least one of the solid state emitter and an electrical path of which the solid state emitter forms a part, wherein the state device includes an electrostatic discharge device comprising: a portion of an epitaxial growth substrate; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter, wherein the separate material has a composition different than that of the first semiconductor component, the second semiconductor component and the active region; and an insulator deposited on a lateral sidewall of the electrostatic discharge device, a portion of an epitaxial growth substrate; a separate material disposed between the portion of the epitaxial growth substrate and the solid state emitter, wherein the separate material has a composition different than that of the first semiconductor component, the second semiconductor component and the active region; and an insulator deposited on a lateral sidewall of the electrostatic discharge device, wherein the state device and the solid state emitter are stacked along a common axis; wherein the solid state transducer system further comprises: a contact electrically coupled to both the second semiconductor component and the epitaxial growth substrate, wherein the contact extends over and is in contact with the second semiconductor component, and is disposed on the epitaxial growth substrate of the electrostatic discharge device and on the insulator, and wherein the contact is formed from a transparent material.