An optoelectronic foil comprising a substrate and a conductive layer comprising at least one metal layer, wherein: between the conductive layer and the substrate, the foil comprises a barrier layer comprising at least one material selected from the group consisting of silicon oxides (SiO x), aluminium oxides (Al 2 O 3, AlO x N y), titanium oxides (TiO x), silicon oxynitrides SiON, silicon nitrides (Si 3 N 4, SiN x), organic silicon compounds (SiC x H y), zirconium oxide, hafnium oxide (HfO 2), chromium oxides (CrO, Cr 2 O 3, CrO 2, CrO 3, CrO 5) and parylene, characterized in that the conductive layer further comprises n oxide layers (131, 133) and n-1 metal layers, wherein the layers (131, 133, 132) are stacked one on the other, so that each metal layer separates two adjacent oxide layers (132, 133) forming a sandwich structure, wherein n is a natural number not less than 2, wherein each oxide layer (131, 133) is made of at least one oxide selected from the group consisting of: ZnO, AZO (aluminium zinc oxide), SnO 2, IZO (indium zinc oxide), FTO (fluorine tin oxide), ZTO (tin zinc oxide), ITO (tin indium oxide), GZO (zinc gallium oxide), GIO (indium gallium oxide), In 2 O 3, Sb:SnO 2, IO:H (hydrogen indium oxide), CdO, Zn 2 SnO 4, ZnSnO 3, Zn 2 In2O 5, NiO x, NiO x:Li, TiOx, ZnS, ZnSe, Te 2 O 3, MoO x, V 2 O 5 and WO 3, and wherein at least one of the oxide layers (131, 133) is: - either a monolayer structure - or a multi-layer structure consisting of at least two sublayers stacked one on the other within the oxide layer (131, 133) and wherein one of the sublayers is made of a different material than another sublayer. between the conductive layer and the substrate, the foil comprises a barrier layer comprising at least one material selected from the group consisting of silicon oxides (SiO x), aluminium oxides (Al 2 O 3, AlO x N y), titanium oxides (TiO x), silicon oxynitrides SiON, silicon nitrides (Si 3 N 4, SiN x), organic silicon compounds (SiC x H y), zirconium oxide, hafnium oxide (HfO 2), chromium oxides (CrO, Cr 2 O 3, CrO 2, CrO 3, CrO 5) and parylene, characterized in that the conductive layer further comprises n oxide layers (131, 133) and n-1 metal layers, wherein the layers (131, 133, 132) are stacked one on the other, so that each metal layer separates two adjacent oxide layers (132, 133) forming a sandwich structure, wherein n is a natural number not less than 2, wherein each oxide layer (131, 133) is made of at least one oxide selected from the group consisting of: ZnO, AZO (aluminium zinc oxide), SnO 2, IZO (indium zinc oxide), FTO (fluorine tin oxide), ZTO (tin zinc oxide), ITO (tin indium oxide), GZO (zinc gallium oxide), GIO (indium gallium oxide), In 2 O 3, Sb:SnO 2, IO:H (hydrogen indium oxide), CdO, Zn 2 SnO 4, ZnSnO 3, Zn 2 In2O 5, NiO x, NiO x:Li, TiOx, ZnS, ZnSe, Te 2 O 3, MoO x, V 2 O 5 and WO 3, and wherein at least one of the oxide layers (131, 133) is: - either a monolayer structure - or a multi-layer structure consisting of at least two sublayers stacked one on the other within the oxide layer (131, 133) and wherein one of the sublayers is made of a different material than another sublayer. wherein each oxide layer (131, 133) is made of at least one oxide selected from the group consisting of: ZnO, AZO (aluminium zinc oxide), SnO 2, IZO (indium zinc oxide), FTO (fluorine tin oxide), ZTO (tin zinc oxide), ITO (tin indium oxide), GZO (zinc gallium oxide), GIO (indium gallium oxide), In 2 O 3, Sb:SnO 2, IO:H (hydrogen indium oxide), CdO, Zn 2 SnO 4, ZnSnO 3, Zn 2 In2O 5, NiO x, NiO x:Li, TiOx, ZnS, ZnSe, Te 2 O 3, MoO x, V 2 O 5 and WO 3, and wherein at least one of the oxide layers (131, 133) is: - either a monolayer structure - or a multi-layer structure consisting of at least two sublayers stacked one on the other within the oxide layer (131, 133) and wherein one of the sublayers is made of a different material than another sublayer. - either a monolayer structure - or a multi-layer structure consisting of at least two sublayers stacked one on the other within the oxide layer (131, 133) and wherein one of the sublayers is made of a different material than another sublayer.