A solid-state imaging device comprising: An array of pixel units each comprising a photodiode; wherein for each pixel unit, a first charge accumulation region is electronically connected to the photodiode, the first charge accumulation region having a smaller saturation charge amount than the photodiode, a second charge accumulation region is electronically connected to the photodiode, the second charge accumulation region having a higher capacitance value per unit area than the first charge accumulation region; and wherein, each pixel unit is arranged to distribute a charge generated in its photodiode into the first charge accumulation region and the second charge accumulation region responsive to the generated amount of charge and the saturation charge of the first charge accumulation region; wherein during an exposure period (t 1 -t 5) common to the pixel units in the array, during a first part of the exposure period (t 1 -t 2), when the generated charge exceeds the saturation charge amount of the photodiode and overflows from the photodiode, pixel units are arranged to accumulate charge in both of the first charge accumulation region and the second charge accumulation region via an overflow path; and during a second, subsequent part of the exposure period (t 2 -t 3), generated charge in the photodiode exceeding a predetermined charge amount equal to the saturation charge amount of the first charge accumulation region is accumulated from the photodiode into both the first charge accumulation region and the second charge accumulation region; and during a third, later part of the exposure period (t 4 -t 5), pixel units are arranged to transfer generated charge from the photodiode only to the first charge accumulation region. An array of pixel units each comprising a photodiode; wherein for each pixel unit, a first charge accumulation region is electronically connected to the photodiode, the first charge accumulation region having a smaller saturation charge amount than the photodiode, a second charge accumulation region is electronically connected to the photodiode, the second charge accumulation region having a higher capacitance value per unit area than the first charge accumulation region; and wherein, each pixel unit is arranged to distribute a charge generated in its photodiode into the first charge accumulation region and the second charge accumulation region responsive to the generated amount of charge and the saturation charge of the first charge accumulation region; wherein during an exposure period (t 1 -t 5) common to the pixel units in the array, during a first part of the exposure period (t 1 -t 2), when the generated charge exceeds the saturation charge amount of the photodiode and overflows from the photodiode, pixel units are arranged to accumulate charge in both of the first charge accumulation region and the second charge accumulation region via an overflow path; and during a second, subsequent part of the exposure period (t 2 -t 3), generated charge in the photodiode exceeding a predetermined charge amount equal to the saturation charge amount of the first charge accumulation region is accumulated from the photodiode into both the first charge accumulation region and the second charge accumulation region; and during a third, later part of the exposure period (t 4 -t 5), pixel units are arranged to transfer generated charge from the photodiode only to the first charge accumulation region.