A light emitting device comprising: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base and configured to reflect the first light upwards; a phosphor member having a lower surface onto which the first light is irradiated and an upper surface serving as a light extraction surface; a light shielding member surrounding lateral surfaces of the phosphor member, wherein: the first light reflecting member comprises a first region onto which a first portion of the first light is irradiated, and a second region onto which another portion of the first light is irradiated, the second region being positioned farther from the first semiconductor laser element than the first region, characterised in that: said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element, and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member, to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member. a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base and configured to reflect the first light upwards; a phosphor member having a lower surface onto which the first light is irradiated and an upper surface serving as a light extraction surface; a light shielding member surrounding lateral surfaces of the phosphor member, wherein: the first light reflecting member comprises a first region onto which a first portion of the first light is irradiated, and a second region onto which another portion of the first light is irradiated, the second region being positioned farther from the first semiconductor laser element than the first region, characterised in that: said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element, and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member, to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member. said light emitting device further comprises a thermistor for enabling measurement of a temperature of the first semiconductor laser element, and the first region and the second region are formed such that a portion of the light reflected by the first region that is reflected on a side close to the second region and a portion of the light reflected by the second region that is reflected on a side close to the first region intersect before reaching the lower surface of the phosphor member, to thereby irradiate both end portions in a longitudinal direction of the irradiated region of the lower surface of the phosphor member.