An object cutting method comprising the steps of: bonding a first-side end face (10a, 10b, 10a, 10b, 10a, 10a) of a first sheet-like object (10A, 10B, 10C, 10D, 10E, 10F) to be processed comprising a silicon substrate having a main face (12a, 12b) in a plane and a second-side end face (1b, 1a, 1b, 1a, 1b, 1b) of a second sheet-like object (1A, 1B, 1C, 1D, 1E, 1F) to be processed such that the second-side end face (1b, 1a, 1b, 1a, 1b, 1b) opposes the main face (12a, 12b); irradiating the first object (10A, 10B, 10C, 10D, 10E, 10F) with laser light so as to form a molten processed region within the silicon substrate along a line to cut for the second object (1A, 1B, 1C, 1D, 1E, 1F) and cause a fracture generated from the molten processed region acting as a start point to reach a second-side end face (10b, 10a, 10b, 10a, 10b, 10b) of the first object (10A, 10B, 10C, 10D, 10E, 10F) along the line; and generating a stress in the first object (10A, 10B, 10C, 10D, 10E, 10F) so as to cause the fracture to reach a first-side end face (1a, 1b, 1a, 1b, 1a, 1a) of the second object (1A, 1B, 1C, 1D, 1E, 1F) along the line and cut the second object (1A, 1B, 1C, 1D, 1E, 1F) along the line, characterized in that the first-side end face (10a, 10b, 10a, 10b, 10a, 10a) of the first object (10A, 10B, 10C, 10D, 10E, 10F) and the second-side face end (1b, 1a, 1b, 1a, 1b, 1b) of the second object (1A, 1B, 1C, 1D, 1E, 1F) are bonded to each other and the size of the first object is larger than the size of the second object such that the outer edge of the first object is located on the outer side of the outer edge of the second object. bonding a first-side end face (10a, 10b, 10a, 10b, 10a, 10a) of a first sheet-like object (10A, 10B, 10C, 10D, 10E, 10F) to be processed comprising a silicon substrate having a main face (12a, 12b) in a plane and a second-side end face (1b, 1a, 1b, 1a, 1b, 1b) of a second sheet-like object (1A, 1B, 1C, 1D, 1E, 1F) to be processed such that the second-side end face (1b, 1a, 1b, 1a, 1b, 1b) opposes the main face (12a, 12b); irradiating the first object (10A, 10B, 10C, 10D, 10E, 10F) with laser light so as to form a molten processed region within the silicon substrate along a line to cut for the second object (1A, 1B, 1C, 1D, 1E, 1F) and cause a fracture generated from the molten processed region acting as a start point to reach a second-side end face (10b, 10a, 10b, 10a, 10b, 10b) of the first object (10A, 10B, 10C, 10D, 10E, 10F) along the line; and generating a stress in the first object (10A, 10B, 10C, 10D, 10E, 10F) so as to cause the fracture to reach a first-side end face (1a, 1b, 1a, 1b, 1a, 1a) of the second object (1A, 1B, 1C, 1D, 1E, 1F) along the line and cut the second object (1A, 1B, 1C, 1D, 1E, 1F) along the line, characterized in that the first-side end face (10a, 10b, 10a, 10b, 10a, 10a) of the first object (10A, 10B, 10C, 10D, 10E, 10F) and the second-side face end (1b, 1a, 1b, 1a, 1b, 1b) of the second object (1A, 1B, 1C, 1D, 1E, 1F) are bonded to each other and the size of the first object is larger than the size of the second object such that the outer edge of the first object is located on the outer side of the outer edge of the second object.