A magnetic tunnel junction, MTJ, unit (100, 200, 300) comprising: a first MTJ (110, 210, 310) comprising, in a bottom-up direction, a first free layer (112, 212), a first tunnel barrier layer (114, 214) and a first reference layer (116, 216), wherein the first MTJ is switchable between a parallel state and an anti-parallel state through spin-torque transfer, STT, wherein the first MTJ has a first STT state switching current threshold, and the first MTJ has a first resistance when in the parallel state and a second resistance when in the anti-parallel state; a second MTJ (120, 220, 320) arranged above the first MTJ and comprising, in a bottom-up direction, a second reference layer (126, 226), a second tunnel barrier layer (124, 224) and a second free layer (122, 222), wherein the second MTJ is switchable between a parallel state and an anti-parallel state through STT, wherein the second MTJ has a second STT state switching current threshold different from the first STT state switching current threshold, and the second MTJ has a third resistance when in the parallel state and a fourth resistance when in the anti-parallel state, wherein the first resistance through fourth resistance are different; and a pinning layer (130, 230, 330) arranged between the first reference layer and the second reference layer and configured to fix a magnetization direction of the first reference layer and the second reference layer; the MTJ unit (100, 200, 300) characterized in that it further comprises: a first coupling layer (140, 340) arranged between the first reference layer (116, 216) and the pinning layer (130, 230, 330), wherein a magnetization of the first reference layer is coupled antiparallel to a magnetization of the pinning layer, through the first coupling layer; and a second coupling layer (150, 250, 350) arranged between the pinning layer and the second reference layer (126, 226), wherein a magnetization of the second reference layer is coupled antiparallel to the magnetization of the pinning layer, through the second coupling layer; wherein the first reference layer comprises a first ferromagnetic layer pair (116a, 116c) and a first texture breaking layer arranged between the ferromagnetic layers of the first ferromagnetic layer pair; the second reference layer comprises a second ferromagnetic layer pair (126a, 126c) and a second texture breaking layer arranged between the ferromagnetic layers of the second ferromagnetic layer pair; and the first and second texture breaking layers have different thicknesses. a first MTJ (110, 210, 310) comprising, in a bottom-up direction, a first free layer (112, 212), a first tunnel barrier layer (114, 214) and a first reference layer (116, 216), wherein the first MTJ is switchable between a parallel state and an anti-parallel state through spin-torque transfer, STT, wherein the first MTJ has a first STT state switching current threshold, and the first MTJ has a first resistance when in the parallel state and a second resistance when in the anti-parallel state; a second MTJ (120, 220, 320) arranged above the first MTJ and comprising, in a bottom-up direction, a second reference layer (126, 226), a second tunnel barrier layer (124, 224) and a second free layer (122, 222), wherein the second MTJ is switchable between a parallel state and an anti-parallel state through STT, wherein the second MTJ has a second STT state switching current threshold different from the first STT state switching current threshold, and the second MTJ has a third resistance when in the parallel state and a fourth resistance when in the anti-parallel state, wherein the first resistance through fourth resistance are different; and a pinning layer (130, 230, 330) arranged between the first reference layer and the second reference layer and configured to fix a magnetization direction of the first reference layer and the second reference layer; the MTJ unit (100, 200, 300) characterized in that it further comprises: a first coupling layer (140, 340) arranged between the first reference layer (116, 216) and the pinning layer (130, 230, 330), wherein a magnetization of the first reference layer is coupled antiparallel to a magnetization of the pinning layer, through the first coupling layer; and a second coupling layer (150, 250, 350) arranged between the pinning layer and the second reference layer (126, 226), wherein a magnetization of the second reference layer is coupled antiparallel to the magnetization of the pinning layer, through the second coupling layer; wherein the first reference layer comprises a first ferromagnetic layer pair (116a, 116c) and a first texture breaking layer arranged between the ferromagnetic layers of the first ferromagnetic layer pair; the second reference layer comprises a second ferromagnetic layer pair (126a, 126c) and a second texture breaking layer arranged between the ferromagnetic layers of the second ferromagnetic layer pair; and the first and second texture breaking layers have different thicknesses.