A vehicle headlamp (1L, 1R) comprising: a semiconductor-type light source (2L, 2R) including a rectangular light emission surface; and a lens (3L, 3R; 5L, 5R) adapted to forwardly radiate light from the semiconductor-type light source (2L, 2R) as a light distribution pattern having a cutoff line, wherein the lens (3L, 3R; 5L, 5R) is made of an incident surface (30L, 30R; 50L, 50R) into which the light from the semiconductor-type light source (2L, 2R) is incident and an emission surface (31L, 31R; 51L, 51R) from which the light that is incident into the lens is emitted, the incident surface (30L, 30R; 50L, 50R) of the lens (3L, 3R; 5L, 5R) is made of a composite quadrature curved surface, and the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) is formed in a convex shape that gently protrudes to an opposite side to a side of the semiconductor-type light source (2L, 2R), the emission surface (31L, 31R; 51L, 51R) being made of a free curved surface, characterized in that the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) has a peak portion (32L, 32R; 52L, 52R) on a cruising lane side with respect to the reference optical axis (ZL, ZR) of the lens (3L, 3R; 5L, 5R) corresponding to the normal line which passes through the center of the rectangular light emission surface of the semiconductor-type light source (2L, 2R), to which reference optical axis (ZL, ZR) the incident surface (30L, 30R; 50L, 50R) is transversely symmetrical, the peak portion (32L, 32R; 52L, 52R) having a peak-portion shape in a horizontal view (X, Z) of the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) and forming a spot portion of the light distribution pattern. a semiconductor-type light source (2L, 2R) including a rectangular light emission surface; and a lens (3L, 3R; 5L, 5R) adapted to forwardly radiate light from the semiconductor-type light source (2L, 2R) as a light distribution pattern having a cutoff line, wherein the lens (3L, 3R; 5L, 5R) is made of an incident surface (30L, 30R; 50L, 50R) into which the light from the semiconductor-type light source (2L, 2R) is incident and an emission surface (31L, 31R; 51L, 51R) from which the light that is incident into the lens is emitted, the incident surface (30L, 30R; 50L, 50R) of the lens (3L, 3R; 5L, 5R) is made of a composite quadrature curved surface, and the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) is formed in a convex shape that gently protrudes to an opposite side to a side of the semiconductor-type light source (2L, 2R), the emission surface (31L, 31R; 51L, 51R) being made of a free curved surface, characterized in that the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) has a peak portion (32L, 32R; 52L, 52R) on a cruising lane side with respect to the reference optical axis (ZL, ZR) of the lens (3L, 3R; 5L, 5R) corresponding to the normal line which passes through the center of the rectangular light emission surface of the semiconductor-type light source (2L, 2R), to which reference optical axis (ZL, ZR) the incident surface (30L, 30R; 50L, 50R) is transversely symmetrical, the peak portion (32L, 32R; 52L, 52R) having a peak-portion shape in a horizontal view (X, Z) of the emission surface (31L, 31R; 51L, 51R) of the lens (3L, 3R; 5L, 5R) and forming a spot portion of the light distribution pattern.