A method for dicing a semiconductor substrate into a plurality of dies, wherein the semiconductor substrate having a front side provided with a plurality of device areas, a back side, and a plurality of through substrate vias, the method comprising the following order of steps: defining, from the front side of the semiconductor substrate, at least one trench to be formed between adjacent device areas (110a, 110b), forming the at least one trench, from the front side of the semiconductor substrate, such that a major portion of a thickness of the semiconductor substrate is removed in the at least one trench, thereby leaving a minor portion of the thickness of the semiconductor substrate underneath the at least one trench, arranging, subsequent to forming the at least one trench, a protective layer on the front side of the semiconductor substrate, the protective layer covering at least a plurality of device areas, thinning, subsequent to arranging the protective layer, the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, whereby at least one through substrate via is revealed while a portion of the minor portion of the thickness of the semiconductor substrate is remained underneath the at least one trench, processing the back side of the semiconductor substrate 100 to form at least one contact, the contact contacting at least one revealed through substrate via, etching, subsequent to processing the back side, from the back side of the semiconductor substrate, through the remaining portion of the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, thereby separating the semiconductor substrate into a plurality of device areas arranged underneath the protective layer, and dicing the semiconductor substrate into the plurality of dies. defining, from the front side of the semiconductor substrate, at least one trench to be formed between adjacent device areas (110a, 110b), forming the at least one trench, from the front side of the semiconductor substrate, such that a major portion of a thickness of the semiconductor substrate is removed in the at least one trench, thereby leaving a minor portion of the thickness of the semiconductor substrate underneath the at least one trench, arranging, subsequent to forming the at least one trench, a protective layer on the front side of the semiconductor substrate, the protective layer covering at least a plurality of device areas, thinning, subsequent to arranging the protective layer, the semiconductor substrate from the back side to reduce the thickness of the semiconductor substrate, whereby at least one through substrate via is revealed while a portion of the minor portion of the thickness of the semiconductor substrate is remained underneath the at least one trench, processing the back side of the semiconductor substrate 100 to form at least one contact, the contact contacting at least one revealed through substrate via, etching, subsequent to processing the back side, from the back side of the semiconductor substrate, through the remaining portion of the minor portion of the thickness of the semiconductor substrate underneath the at least one trench, thereby separating the semiconductor substrate into a plurality of device areas arranged underneath the protective layer, and dicing the semiconductor substrate into the plurality of dies.