A light emitting device comprising: a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a first reflection layer disposed on the second semiconductor layer, the first reflection layer being in contact with a side surface of the second electrode and a portion of an upper surface of the second electrode; and a second reflection layer disposed on the second semiconductor layer such that at least a portion of the second reflection layer is vertically overlapped with the second electrode, wherein the first reflection layer comprises at least a first layer having a first index of refraction, and a second layer disposed on the first layer and the second layer having a second index of refraction different from the first index of refraction, wherein the second index of refraction is higher than the first index of refraction, wherein the second electrode comprises a second electrode pad disposed on one side of the second semiconductor layer, and at least one second electrode wing connected to the second electrode pad while extending in a direction opposite the second electrode pad, wherein the first reflection layer extends from an upper surface of the second semiconductor layer to a portion of an upper surface of the second electrode pad along a side surface of the second electrode pad, wherein the side surface of the second electrode pad comprises an inclined surface, and wherein an impact buffering layer is additionally formed on an outer surface of the first reflection layer. a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a first reflection layer disposed on the second semiconductor layer, the first reflection layer being in contact with a side surface of the second electrode and a portion of an upper surface of the second electrode; and a second reflection layer disposed on the second semiconductor layer such that at least a portion of the second reflection layer is vertically overlapped with the second electrode, wherein the first reflection layer comprises at least a first layer having a first index of refraction, and a second layer disposed on the first layer and the second layer having a second index of refraction different from the first index of refraction, wherein the second index of refraction is higher than the first index of refraction, wherein the second electrode comprises a second electrode pad disposed on one side of the second semiconductor layer, and at least one second electrode wing connected to the second electrode pad while extending in a direction opposite the second electrode pad, wherein the first reflection layer extends from an upper surface of the second semiconductor layer to a portion of an upper surface of the second electrode pad along a side surface of the second electrode pad, wherein the side surface of the second electrode pad comprises an inclined surface, and wherein an impact buffering layer is additionally formed on an outer surface of the first reflection layer.