A semiconductor device, comprising: a semiconductor body having a first side, a second side and an edge, an inner zone having a base doping of a first conductivity type, a first semiconductor zone - arranged between the first side and the inner zone - of the first conductivity type having a doping concentration that is higher than that of the inner zone, a second semiconductor zone - arranged between the second side and the inner zone - of a second conductivity type, which is complementary to the first conductivity type and has a doping concentration that is higher than that of the inner zone, at least one first edge bevel, which extends at a first acute angle with respect to the extension plane of the transition from the second semiconductor zone to inner zone at least along the edge of the second semiconductor zone and the inner zone, and a second edge bevel having a second acute angle with respect to the transition from the first semiconductor zone to the inner zone, wherein the magnitude of the second acute angle is smaller than the magnitude of the first acute angle, wherein the first acute angle is a positive angle and the second acute angle is a negative angle; characterized in that at least one buried semiconductor zone of the second conductivity type with a doping concentration higher than that of the inner zone is provided between the first semiconductor zone and the inner zone and extends essentially parallel to the first semiconductor zone and is provided only in an edge region of the semiconductor body, and that the second edge bevel extends at least along the edge of the first semiconductor zone and the buried semiconductor zone. a semiconductor body having a first side, a second side and an edge, an inner zone having a base doping of a first conductivity type, a first semiconductor zone - arranged between the first side and the inner zone - of the first conductivity type having a doping concentration that is higher than that of the inner zone, a second semiconductor zone - arranged between the second side and the inner zone - of a second conductivity type, which is complementary to the first conductivity type and has a doping concentration that is higher than that of the inner zone, at least one first edge bevel, which extends at a first acute angle with respect to the extension plane of the transition from the second semiconductor zone to inner zone at least along the edge of the second semiconductor zone and the inner zone, and a second edge bevel having a second acute angle with respect to the transition from the first semiconductor zone to the inner zone, wherein the magnitude of the second acute angle is smaller than the magnitude of the first acute angle, wherein the first acute angle is a positive angle and the second acute angle is a negative angle; characterized in that at least one buried semiconductor zone of the second conductivity type with a doping concentration higher than that of the inner zone is provided between the first semiconductor zone and the inner zone and extends essentially parallel to the first semiconductor zone and is provided only in an edge region of the semiconductor body, and that the second edge bevel extends at least along the edge of the first semiconductor zone and the buried semiconductor zone.