A driving circuit adapted to drive a subsequent stage circuit depending on a set signal and a reset signal that are inputted, comprising: a set side level shift circuit (10-S) which operates depending on the set signal, and generates a set potential (Vsetb), a reset side level shift circuit (10-R) which operates depending on the reset signal, and generates a reset potential (Vrstb), and a control circuit which is configured to generate a control signal depending on the set potential and the reset potential (Vrstb), and to drive the subsequent stage circuit, wherein each of the set side level shift circuit (10-S) and the reset side level shift circuit (10-R) has an input transistor (14-S) which is provided between a high potential (Vb) and a reference potential, and configured to operate depending on the set signal or the reset signal, and to output a drain potential as the set potential (Vsetb) or the reset potential (Vrstb), a serial transistor unit (20-S) which includes a first MOS transistor and a second MOS transistor which are connected in series between a drain terminal of the input transistor (14-S) and the high potential (Vb), and a resistance provided parallel to the serial transistor unit (20-S) between the high potential (Vb) and the set potential or the reset potential, the drain of the input transistor being connected to the high potential via the resistance, the first MOS transistors in the set side level shift circuit (10-S) and the reset side level shift circuit (10-R) being configured to complementarily operate to each other corresponding to a logical value of the control signal which the control circuit outputs, the set side level shift circuit (10-S) further has a set side buffer (18-S) which is configured to compare a level of the set potential (Vsetb) with a threshold value depending on the high potential (Vb), and to control the second MOS transistor of the reset side level shift circuit (10-R) based on a result of the comparison, the reset side level shift circuit (10-R) further has a reset side buffer (18-R) which is configured to compare a level of the reset potential (Vrstb) with a threshold value depending on the high potential (Vb), and to control the second MOS transistor of the set side level shift circuit (10-S) based on a result of the comparison. a set side level shift circuit (10-S) which operates depending on the set signal, and generates a set potential (Vsetb), a reset side level shift circuit (10-R) which operates depending on the reset signal, and generates a reset potential (Vrstb), and a control circuit which is configured to generate a control signal depending on the set potential and the reset potential (Vrstb), and to drive the subsequent stage circuit, wherein each of the set side level shift circuit (10-S) and the reset side level shift circuit (10-R) has an input transistor (14-S) which is provided between a high potential (Vb) and a reference potential, and configured to operate depending on the set signal or the reset signal, and to output a drain potential as the set potential (Vsetb) or the reset potential (Vrstb), a serial transistor unit (20-S) which includes a first MOS transistor and a second MOS transistor which are connected in series between a drain terminal of the input transistor (14-S) and the high potential (Vb), and a resistance provided parallel to the serial transistor unit (20-S) between the high potential (Vb) and the set potential or the reset potential, the drain of the input transistor being connected to the high potential via the resistance, the first MOS transistors in the set side level shift circuit (10-S) and the reset side level shift circuit (10-R) being configured to complementarily operate to each other corresponding to a logical value of the control signal which the control circuit outputs, the set side level shift circuit (10-S) further has a set side buffer (18-S) which is configured to compare a level of the set potential (Vsetb) with a threshold value depending on the high potential (Vb), and to control the second MOS transistor of the reset side level shift circuit (10-R) based on a result of the comparison, the reset side level shift circuit (10-R) further has a reset side buffer (18-R) which is configured to compare a level of the reset potential (Vrstb) with a threshold value depending on the high potential (Vb), and to control the second MOS transistor of the set side level shift circuit (10-S) based on a result of the comparison.