An organic light-emitting display system, comprising: a substrate; a display unit that defines an active area on the substrate and comprises a plurality of thin film transistors (TFTs); and an encapsulation layer that seals the display unit and comprises a second inorganic film; wherein the TFTs comprise an active layer, a gate electrode, a source electrode and a drain electrode, wherein the active layer, the gate electrode, and the source and drain electrodes (206, 207) are sequentially stacked, and an interlayer insulating film disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, the interlayer insulating film being formed to correspond to the entire surface of the substrate, wherein the second inorganic film directly contacts the interlayer insulating film of the TFTs outside the active area, and characterized in that the encapsulation layer has a stacked structure in which at least a first inorganic film, a first organic film, and the second inorganic film are sequentially stacked, wherein the first inorganic film is the innermost film of the encapsulation layer which is closest to the display unit, the first organic film being formed on a surface of the first inorganic film facing away from the display unit and the second inorganic film being formed on a surface of the first organic film opposed to the surface facing the first inorganic film, wherein the second inorganic film covers a larger area than the first inorganic film and the first organic film, the first inorganic film is formed of aluminum oxide (AlOx), the second inorganic film is formed of silicon nitride (SiNx), and the interlayer insulating film is also formed of silicon nitride (SiNx) or, when the interlayer insulating film has a two-layer structure, an upper layer of the interlayer insulating film is formed of silicon nitride (SiNx), wherein the upper layer is the layer contacting the second inorganic film. a substrate; a display unit that defines an active area on the substrate and comprises a plurality of thin film transistors (TFTs); and an encapsulation layer that seals the display unit and comprises a second inorganic film; wherein the TFTs comprise an active layer, a gate electrode, a source electrode and a drain electrode, wherein the active layer, the gate electrode, and the source and drain electrodes (206, 207) are sequentially stacked, and an interlayer insulating film disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, the interlayer insulating film being formed to correspond to the entire surface of the substrate, an active layer, a gate electrode, a source electrode and a drain electrode, wherein the active layer, the gate electrode, and the source and drain electrodes (206, 207) are sequentially stacked, and an interlayer insulating film disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, the interlayer insulating film being formed to correspond to the entire surface of the substrate, wherein the second inorganic film directly contacts the interlayer insulating film of the TFTs outside the active area, and characterized in that the encapsulation layer has a stacked structure in which at least a first inorganic film, a first organic film, and the second inorganic film are sequentially stacked, wherein the first inorganic film is the innermost film of the encapsulation layer which is closest to the display unit, the first organic film being formed on a surface of the first inorganic film facing away from the display unit and the second inorganic film being formed on a surface of the first organic film opposed to the surface facing the first inorganic film, wherein the second inorganic film covers a larger area than the first inorganic film and the first organic film, the first inorganic film is formed of aluminum oxide (AlOx), the second inorganic film is formed of silicon nitride (SiNx), and the interlayer insulating film is also formed of silicon nitride (SiNx) or, when the interlayer insulating film has a two-layer structure, an upper layer of the interlayer insulating film is formed of silicon nitride (SiNx), wherein the upper layer is the layer contacting the second inorganic film.