A method of preparing a multilayer structure, the method comprising the following steps in order: (a) forming a front handle silicon dioxide layer on a front handle surface of a single crystal silicon handle wafer and a back handle silicon dioxide layer on a back handle surface of a single crystal silicon handle wafer by thermal oxidation of the single crystal silicon handle wafer, wherein the single crystal silicon handle wafer comprises two major, generally parallel surfaces, one of which is the front handle surface of the single crystal silicon handle wafer and the other of which is the back handle surface of the single crystal silicon handle wafer, a circumferential edge joining the front handle surface and the back handle surface of the single crystal silicon handle wafer, a central plane between the front handle surface and the back handle surface of the single crystal silicon handle wafer, and a bulk region between the front handle surface and back handle surfaces of the single crystal silicon handle wafer; (b) forming a front handle silicon nitride layer on the front handle silicon dioxide layer and a back handle silicon nitride layer on the back handle silicon dioxide layer by low pressure chemical vapor deposition; (c) removing the back handle silicon nitride layer by plasma etching; (d) removing the back handle silicon dioxide layer by etching; and (e) bonding the front handle silicon nitride layer to a donor silicon dioxide layer on a front donor surface of a single crystal silicon donor wafer to thereby form a bonded structure, wherein the single crystal silicon donor wafer comprises two major, generally parallel surfaces, one of which is the front donor surface of the single crystal silicon donor wafer and the other of which is the back donor surface of the single crystal silicon donor wafer, a circumferential edge joining the front donor surface and the back donor surface of the single crystal silicon donor wafer, a central plane between the front donor surface and the back donor surface of the single crystal silicon donor wafer, and a bulk region between the front and back donor surfaces of the single crystal silicon donor wafer, and further wherein the single crystal silicon donor wafer comprises a damage layer formed by ion implantation. (a) forming a front handle silicon dioxide layer on a front handle surface of a single crystal silicon handle wafer and a back handle silicon dioxide layer on a back handle surface of a single crystal silicon handle wafer by thermal oxidation of the single crystal silicon handle wafer, wherein the single crystal silicon handle wafer comprises two major, generally parallel surfaces, one of which is the front handle surface of the single crystal silicon handle wafer and the other of which is the back handle surface of the single crystal silicon handle wafer, a circumferential edge joining the front handle surface and the back handle surface of the single crystal silicon handle wafer, a central plane between the front handle surface and the back handle surface of the single crystal silicon handle wafer, and a bulk region between the front handle surface and back handle surfaces of the single crystal silicon handle wafer; (b) forming a front handle silicon nitride layer on the front handle silicon dioxide layer and a back handle silicon nitride layer on the back handle silicon dioxide layer by low pressure chemical vapor deposition; (c) removing the back handle silicon nitride layer by plasma etching; (d) removing the back handle silicon dioxide layer by etching; and (e) bonding the front handle silicon nitride layer to a donor silicon dioxide layer on a front donor surface of a single crystal silicon donor wafer to thereby form a bonded structure, wherein the single crystal silicon donor wafer comprises two major, generally parallel surfaces, one of which is the front donor surface of the single crystal silicon donor wafer and the other of which is the back donor surface of the single crystal silicon donor wafer, a circumferential edge joining the front donor surface and the back donor surface of the single crystal silicon donor wafer, a central plane between the front donor surface and the back donor surface of the single crystal silicon donor wafer, and a bulk region between the front and back donor surfaces of the single crystal silicon donor wafer, and further wherein the single crystal silicon donor wafer comprises a damage layer formed by ion implantation.