A memory device comprising: a fixed magnetic layer; a tunnel barrier layer over the fixed magnetic layer; and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure comprises: a first free magnetic layer having a first magnetic moment; a first interlayer, made of a non-magnetic material, in contact with the first free magnetic layer; and a second free magnetic layer having a second magnetic moment, wherein the second free magnetic layer is ferromagnetically coupled to the first free magnetic layer and is in contact with the first interlayer; and wherein: the memory device is capable of being programmed by impinging a spin-polarized electron current on the free magnetic structure, characterised in that the first free magnetic layer, the first interlayer and the second free magnetic layer form a ferromagnetic structure operable as a single free layer to be programmed by impinging a spin-polarized electron current on the free magnetic structure such that the first and second magnetic moments are sequentially switched due to being ferromagnetically coupled. a fixed magnetic layer; a tunnel barrier layer over the fixed magnetic layer; and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure comprises: a first free magnetic layer having a first magnetic moment; a first interlayer, made of a non-magnetic material, in contact with the first free magnetic layer; and a second free magnetic layer having a second magnetic moment, wherein the second free magnetic layer is ferromagnetically coupled to the first free magnetic layer and is in contact with the first interlayer; and wherein: the memory device is capable of being programmed by impinging a spin-polarized electron current on the free magnetic structure, characterised in that the first free magnetic layer, the first interlayer and the second free magnetic layer form a ferromagnetic structure operable as a single free layer to be programmed by impinging a spin-polarized electron current on the free magnetic structure such that the first and second magnetic moments are sequentially switched due to being ferromagnetically coupled. a first free magnetic layer having a first magnetic moment; a first interlayer, made of a non-magnetic material, in contact with the first free magnetic layer; and a second free magnetic layer having a second magnetic moment, wherein the second free magnetic layer is ferromagnetically coupled to the first free magnetic layer and is in contact with the first interlayer; and wherein: the memory device is capable of being programmed by impinging a spin-polarized electron current on the free magnetic structure, characterised in that the first free magnetic layer, the first interlayer and the second free magnetic layer form a ferromagnetic structure operable as a single free layer to be programmed by impinging a spin-polarized electron current on the free magnetic structure such that the first and second magnetic moments are sequentially switched due to being ferromagnetically coupled. the memory device is capable of being programmed by impinging a spin-polarized electron current on the free magnetic structure, characterised in that the first free magnetic layer, the first interlayer and the second free magnetic layer form a ferromagnetic structure operable as a single free layer to be programmed by impinging a spin-polarized electron current on the free magnetic structure such that the first and second magnetic moments are sequentially switched due to being ferromagnetically coupled.