A semiconductor structure, comprising: a substrate; a first electrode disposed in the substrate; a storage structure formed on the first electrode, wherein the storage structure comprises a magnetic stacked layer structure; a first shielding layer formed on the substrate, wherein the first electrode penetrates the first shielding layer; a first dielectric layer formed on the first shielding layer, wherein the first electrode is disposed in the first dielectric layer, and a top surface of the first electrode is flush with a top surface of the first dielectric layer; a second dielectric layer formed on the first dielectric layer and covering a top surface and sidewalls of the magnetic stacked layer structure, wherein the first dielectric layer and the second dielectric layer together constitute an isolation layer; and a second electrode penetrating the shielding layer at the top surface of the magnetic stacked layer structure and electrically connects to the storage structure; characterized in that the semiconductor structure further comprises: a second shielding layer formed on the first shielding layer and formed on an outer surface of the isolation layer, wherein the first shielding layer and the second shielding layer together constitute a shielding layer covering the top surface and the sidewalls of the magnetic stacked layer structure, and a bottom surface of the shielding layer is lower than a bottom surface of the storage structure, and wherein a material of the first shielding layer is different from a material of the second shielding layer and the material of the first shielding layer and the material of the second shielding layer each comprises a conductive material or a magnetically permeable material. a substrate; a first electrode disposed in the substrate; a storage structure formed on the first electrode, wherein the storage structure comprises a magnetic stacked layer structure; a first shielding layer formed on the substrate, wherein the first electrode penetrates the first shielding layer; a first dielectric layer formed on the first shielding layer, wherein the first electrode is disposed in the first dielectric layer, and a top surface of the first electrode is flush with a top surface of the first dielectric layer; a second dielectric layer formed on the first dielectric layer and covering a top surface and sidewalls of the magnetic stacked layer structure, wherein the first dielectric layer and the second dielectric layer together constitute an isolation layer; and a second electrode penetrating the shielding layer at the top surface of the magnetic stacked layer structure and electrically connects to the storage structure; characterized in that the semiconductor structure further comprises: a second shielding layer formed on the first shielding layer and formed on an outer surface of the isolation layer, wherein the first shielding layer and the second shielding layer together constitute a shielding layer covering the top surface and the sidewalls of the magnetic stacked layer structure, and a bottom surface of the shielding layer is lower than a bottom surface of the storage structure, and wherein a material of the first shielding layer is different from a material of the second shielding layer and the material of the first shielding layer and the material of the second shielding layer each comprises a conductive material or a magnetically permeable material.