A method for crystal pulling of monocrystalline silicon rods, comprising: performing an equal-diameter process, wherein the equal-diameter process is divided into a first equal-diameter stage, a second equal-diameter stage, and a third equal-diameter stage in turn according to a growth length of crystal, wherein the crystal has a growth length in a range of 0mm to 600mm in the first equal-diameter stage, a growth length in a range of 600mm to 1500mm in the second equal-diameter stage, and a growth length in a range of 1500mm to 5000mm in the third equal-diameter stage, and wherein performing the equal-diameter process comprises sequentially adjusting a crystal rotation rate, a crucible rotation rate, a furnace pressure, and an inert gas flow rate, including: from the first equal-diameter stage to the third equal-diameter stage, gradually increasing the crystal rotation rate after starting at a first initial crystal rotation rate, and keeping the crystal rotation rate at a constant rotation rate after gradually increasing the crystal rotation rate; gradually increasing the crucible rotation rate from a first initial crucible rotation rate to a maximum crucible rotation rate after starting at the first initial crucible rotation rate in the first equal-diameter stage, keeping the crucible rotation rate at the maximum crucible rotation rate in the second equal-diameter stage, and gradually decreasing the crucible rotation rate after the second equal-diameter stage; and gradually decreasing the furnace pressure after starting at a first initial furnace pressure, and starting at a first initial inert gas flow rate in the first equal-diameter stage and gradually increasing the inert gas flow rate after the first equal-diameter stage; and performing a cooling process in which a furnace pressure and an inert gas flow rate are sequentially adjusted. performing an equal-diameter process, wherein the equal-diameter process is divided into a first equal-diameter stage, a second equal-diameter stage, and a third equal-diameter stage in turn according to a growth length of crystal, wherein the crystal has a growth length in a range of 0mm to 600mm in the first equal-diameter stage, a growth length in a range of 600mm to 1500mm in the second equal-diameter stage, and a growth length in a range of 1500mm to 5000mm in the third equal-diameter stage, and wherein performing the equal-diameter process comprises sequentially adjusting a crystal rotation rate, a crucible rotation rate, a furnace pressure, and an inert gas flow rate, including: from the first equal-diameter stage to the third equal-diameter stage, gradually increasing the crystal rotation rate after starting at a first initial crystal rotation rate, and keeping the crystal rotation rate at a constant rotation rate after gradually increasing the crystal rotation rate; gradually increasing the crucible rotation rate from a first initial crucible rotation rate to a maximum crucible rotation rate after starting at the first initial crucible rotation rate in the first equal-diameter stage, keeping the crucible rotation rate at the maximum crucible rotation rate in the second equal-diameter stage, and gradually decreasing the crucible rotation rate after the second equal-diameter stage; and gradually decreasing the furnace pressure after starting at a first initial furnace pressure, and starting at a first initial inert gas flow rate in the first equal-diameter stage and gradually increasing the inert gas flow rate after the first equal-diameter stage; and from the first equal-diameter stage to the third equal-diameter stage, gradually increasing the crystal rotation rate after starting at a first initial crystal rotation rate, and keeping the crystal rotation rate at a constant rotation rate after gradually increasing the crystal rotation rate; gradually increasing the crucible rotation rate from a first initial crucible rotation rate to a maximum crucible rotation rate after starting at the first initial crucible rotation rate in the first equal-diameter stage, keeping the crucible rotation rate at the maximum crucible rotation rate in the second equal-diameter stage, and gradually decreasing the crucible rotation rate after the second equal-diameter stage; and gradually decreasing the furnace pressure after starting at a first initial furnace pressure, and starting at a first initial inert gas flow rate in the first equal-diameter stage and gradually increasing the inert gas flow rate after the first equal-diameter stage; and performing a cooling process in which a furnace pressure and an inert gas flow rate are sequentially adjusted.