A method for making a removable interconnect structure, comprising: applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact on a first surface of the electronic device and the first metal layer is located on a surface of the I/O contact; applying a removable layer to the first surface of the electronic device, wherein the removable layer is located adjacent to the first metal layer on regions not covered by the first metal layer and the removable layer has a thickness equal to the thickness of the first metal layer; applying an adhesive layer to the electronic device or to a first surface of a base insulative layer; securing the electronic device to the first surface of the base insulative layer using the adhesive layer, with the adhesive layer being positioned between the removable layer and the base insulative layer so as to bond the removable layer to the first surface of the base insulative layer; wherein the first metal layer and removable layer are disposed between the electronic device and the base insulative layer, the removable layer having a softening point and the first metal layer having a melting point each being lower than a maximum damage threshold temperature of the electronic device and/or a maximum damage threshold temperature of the base insulative layer; providing an electrical connection connecting the I/O contact on the electronic device to an electrical conductor located on the second surface of the base insulative layer opposite the first surface of the insulative layer; exposing the removable layer and first metal layer to a temperature higher than said softening or melting point but lower than the maximum damage threshold temperature of the electronic device and/or a maximum damage threshold temperature of the base insulative layer and, at said temperature, removing the electronic device from the base insulative layer. applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact on a first surface of the electronic device and the first metal layer is located on a surface of the I/O contact; applying a removable layer to the first surface of the electronic device, wherein the removable layer is located adjacent to the first metal layer on regions not covered by the first metal layer and the removable layer has a thickness equal to the thickness of the first metal layer; applying an adhesive layer to the electronic device or to a first surface of a base insulative layer; securing the electronic device to the first surface of the base insulative layer using the adhesive layer, with the adhesive layer being positioned between the removable layer and the base insulative layer so as to bond the removable layer to the first surface of the base insulative layer; wherein the first metal layer and removable layer are disposed between the electronic device and the base insulative layer, the removable layer having a softening point and the first metal layer having a melting point each being lower than a maximum damage threshold temperature of the electronic device and/or a maximum damage threshold temperature of the base insulative layer; providing an electrical connection connecting the I/O contact on the electronic device to an electrical conductor located on the second surface of the base insulative layer opposite the first surface of the insulative layer; exposing the removable layer and first metal layer to a temperature higher than said softening or melting point but lower than the maximum damage threshold temperature of the electronic device and/or a maximum damage threshold temperature of the base insulative layer and, at said temperature, removing the electronic device from the base insulative layer.