Method for fabricating a field effect device successively comprising: - providing a substrate covered by ∘ a semiconductor material pattern comprising a first layer made from first semiconductor material covering a second layer made from second semiconductor material, ∘ a gate pattern covering the semiconductor material pattern, - etching the first layer of first semiconductor material using the gate pattern as etch mask, - etching the second layer of second semiconductor material so as to form a cavity and to suspend the first layer of first semiconductor material, - depositing a filling material so as to fill the cavity, ∘ etching the filling material using the gate pattern as etch mask to form a dividing pattern, ∘ depositing a semiconductor material so that the dividing pattern comprises at least three consecutive faces covered by the semiconductor material pattern, the gate pattern covering the dividing pattern and defining a source region, a drain region and a conduction channel in the semiconductor material pattern, - depositing a cap layer (13a, 13b) so as to cover the substrate, the semiconductor material pattern and the gate pattern, - eliminating the substrate (1, 15, 16) so as to release a part of the source region, drain region and gate pattern, - forming two delineation patterns covering the source and drain regions and leaving the dividing pattern free, - depositing a second cap layer, the first and second cap layers (13a, 13b, 19) being separated by the semiconductor material pattern over at least a part thereof, - eliminating the two delineation patterns to form access vias to the source region and drain region. - providing a substrate covered by ∘ a semiconductor material pattern comprising a first layer made from first semiconductor material covering a second layer made from second semiconductor material, ∘ a gate pattern covering the semiconductor material pattern, ∘ a semiconductor material pattern comprising a first layer made from first semiconductor material covering a second layer made from second semiconductor material, ∘ a gate pattern covering the semiconductor material pattern, - etching the first layer of first semiconductor material using the gate pattern as etch mask, - etching the second layer of second semiconductor material so as to form a cavity and to suspend the first layer of first semiconductor material, - depositing a filling material so as to fill the cavity, ∘ etching the filling material using the gate pattern as etch mask to form a dividing pattern, ∘ depositing a semiconductor material so that the dividing pattern comprises at least three consecutive faces covered by the semiconductor material pattern, the gate pattern covering the dividing pattern and defining a source region, a drain region and a conduction channel in the semiconductor material pattern, ∘ etching the filling material using the gate pattern as etch mask to form a dividing pattern, ∘ depositing a semiconductor material so that the dividing pattern comprises at least three consecutive faces covered by the semiconductor material pattern, the gate pattern covering the dividing pattern and defining a source region, a drain region and a conduction channel in the semiconductor material pattern, - depositing a cap layer (13a, 13b) so as to cover the substrate, the semiconductor material pattern and the gate pattern, - eliminating the substrate (1, 15, 16) so as to release a part of the source region, drain region and gate pattern, - forming two delineation patterns covering the source and drain regions and leaving the dividing pattern free, - depositing a second cap layer, the first and second cap layers (13a, 13b, 19) being separated by the semiconductor material pattern over at least a part thereof, - eliminating the two delineation patterns to form access vias to the source region and drain region.