A method of forming a transistor device, comprising: providing a drift layer comprising silicon carbide having a first conductivity type; doping an upper portion of the drift layer with dopants of the first conductivity type more heavily than a lower portion of the drift layer to form a current spreading region in the upper portion of the drift layer; forming a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type, wherein the depth to which the first region extends into the drift layer is less than a thickness of the upper portion of the drift layer; forming a body layer comprising silicon carbide having the second conductivity type on the drift layer including the first region; forming a source layer comprising silicon carbide on the body layer, the source layer having the first conductivity type; forming a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region; forming a trench in the source layer and the body layer, the trench extending into the drift layer adjacent the first region, the trench having an inner sidewall facing away from the first region; forming a gate insulator on the inner sidewall of the trench; forming a gate contact on the gate insulator; and forming a source ohmic contact on the source layer and on the body contact region, wherein the body contact region conductively connects the first region to the source ohmic contact, wherein forming the first region comprises selectively implanting dopants into the drift layer at an implant energy of less than 1000keV at a doping concentration of between 1×10 18 cm -3 and 1×10 21 cm -3. providing a drift layer comprising silicon carbide having a first conductivity type; doping an upper portion of the drift layer with dopants of the first conductivity type more heavily than a lower portion of the drift layer to form a current spreading region in the upper portion of the drift layer; forming a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type, wherein the depth to which the first region extends into the drift layer is less than a thickness of the upper portion of the drift layer; forming a body layer comprising silicon carbide having the second conductivity type on the drift layer including the first region; forming a source layer comprising silicon carbide on the body layer, the source layer having the first conductivity type; forming a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region; forming a trench in the source layer and the body layer, the trench extending into the drift layer adjacent the first region, the trench having an inner sidewall facing away from the first region; forming a gate insulator on the inner sidewall of the trench; forming a gate contact on the gate insulator; and forming a source ohmic contact on the source layer and on the body contact region, wherein the body contact region conductively connects the first region to the source ohmic contact, wherein forming the first region comprises selectively implanting dopants into the drift layer at an implant energy of less than 1000keV at a doping concentration of between 1×10 18 cm -3 and 1×10 21 cm -3.