Semiconductor sensor structure comprising a first semiconductor wafer, wherein - the first semiconductor wafer comprises a semiconductor layer of a second conductivity type with a front side and a rear side, - a three-dimensional Hall sensor structure (HSENS) with a sensor zone is formed in the first semiconductor layer of the first semiconductor wafer. wherein - the sensor zone consists of a monolithic semiconductor body extending from the rear side to the front side of the semiconductor layer, - at least three mutually spaced first metallic terminal contacts (K1.1, K.1.2, K1.3) are formed on the front side and at least three mutually spaced second metallic terminal contacts (K2.1, K2.2, K2.3) are formed on the rear side, - the first terminal contacts (K1.1, K1.2, K1.3) are arranged in a projection perpendicular to the front side to be offset relative to the second terminal contacts (K2.1, K2.2, K2.3), - each first terminal contact (K1.1, K1.2, K1.3) and each second terminal contact (K2.1, K2.2, K2.3) is formed on a respective highly doped semiconductor contact zone of a second conductivity type, - the first terminal contacts (K1.1, K1.2, K1.3) and the second terminal contacts (K2.1, K2.2, K2.3) are respectively arranged with a multiple rotational symmetry with respect to an axis of symmetry perpendicular to the front side and to the rear side of the semiconductor body, characterised in that - the semiconductor body is electrically isolated by means of an encircling trench structure from the rest of the semiconductor layer of the first semiconductor wafer, - the semiconductor body has a thickness of 2 microns up to 50 microns or 100 microns in the sensor zone, - the semiconductor sensor structure comprises a second semiconductor wafer, wherein - the second semiconductor wafer comprises a substrate layer formed at a rear side and an integrated circuit, which is formed at a front side, with at least one metallic terminal contact formed on the front side and comprising a contacting mound, - the rear side of the first semiconductor wafer is arranged above the front side of the second semiconductor wafer, - at least one second terminal contact (K2.1, K2.2, K2.3) of the Hall sensor structure (HSENS) is arranged at least partly above a metallic terminal contact of the integrated circuit and - the metallic terminal contact of the integrated circuit is connected by material couple and by means of the contact mound with the second terminal contact (K2.1, K2.2, K2.3) arranged above, so that an electrical operative connection is formed between the Hall sensor structure (HSENS) and the integrated circuit and - the contact mound has a suitable height so that an air gap forms between the rear side of the second semiconductor wafer and the front side of the second semiconductor wafer around the contact mound. - the first semiconductor wafer comprises a semiconductor layer of a second conductivity type with a front side and a rear side, - a three-dimensional Hall sensor structure (HSENS) with a sensor zone is formed in the first semiconductor layer of the first semiconductor wafer. wherein - the sensor zone consists of a monolithic semiconductor body extending from the rear side to the front side of the semiconductor layer, - at least three mutually spaced first metallic terminal contacts (K1.1, K.1.2, K1.3) are formed on the front side and at least three mutually spaced second metallic terminal contacts (K2.1, K2.2, K2.3) are formed on the rear side, - the first terminal contacts (K1.1, K1.2, K1.3) are arranged in a projection perpendicular to the front side to be offset relative to the second terminal contacts (K2.1, K2.2, K2.3), - each first terminal contact (K1.1, K1.2, K1.3) and each second terminal contact (K2.1, K2.2, K2.3) is formed on a respective highly doped semiconductor contact zone of a second conductivity type, - the first terminal contacts (K1.1, K1.2, K1.3) and the second terminal contacts (K2.1, K2.2, K2.3) are respectively arranged with a multiple rotational symmetry with respect to an axis of symmetry perpendicular to the front side and to the rear side of the semiconductor body, characterised in that - the semiconductor body is electrically isolated by means of an encircling trench structure from the rest of the semiconductor layer of the first semiconductor wafer, - the semiconductor body has a thickness of 2 microns up to 50 microns or 100 microns in the sensor zone, - the semiconductor sensor structure comprises a second semiconductor wafer, wherein - the second semiconductor wafer comprises a substrate layer formed at a rear side and an integrated circuit, which is formed at a front side, with at least one metallic terminal contact formed on the front side and comprising a contacting mound, - the rear side of the first semiconductor wafer is arranged above the front side of the second semiconductor wafer, - at least one second terminal contact (K2.1, K2.2, K2.3) of the Hall sensor structure (HSENS) is arranged at least partly above a metallic terminal contact of the integrated circuit and - the metallic terminal contact of the integrated circuit is connected by material couple and by means of the contact mound with the second terminal contact (K2.1, K2.2, K2.3) arranged above, so that an electrical operative connection is formed between the Hall sensor structure (HSENS) and the integrated circuit and - the contact mound has a suitable height so that an air gap forms between the rear side of the second semiconductor wafer and the front side of the second semiconductor wafer around the contact mound.