An acoustic wave device, comprising a substrate, as well as a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially arranged on the substrate, the device further comprising a protective layer, wherein the protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer; and the first position is a position, corresponding to a first overlapping region, above the second electrode layer, and the first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped, further comprising a conductive layer arranged on a surface, far away from the substrate, of the first electrode layer and a surface, far away from the substrate, of the second electrode layer, wherein the protective layer is arranged at a position such that the protective layer does not cover the conductive layer, wherein the protective layer comprises a first protective sublayer and a second protective sublayer; the first protective sublayer is arranged at a position on a surface of the second electrode layer and a surface of the piezoelectric layer surrounding the first overlapping region far away from the substrate of the acoustic wave device, such that the first protective sublayer does not cover the conductive layer; the second protective sublayer is arranged at the first position above the surface, far away from the substrate, of the second electrode layer; the second protective sublayer is also arranged on a surface, far away from the substrate, of the first protective sublayer; and the first protective sublayer and the second protective sublayer are connected together, wherein a position of the first protective sublayer is at a preset distance from a position of the first overlapping region in a direction parallel to the substrate, and the preset distance is longer than 0.001 um, wherein the device further comprises a first through hole passing through the second electrode layer, the piezoelectric layer and the first electrode layer and a second through hole passing through the second protective sublayer, wherein the second through hole is communicated with the first through hole. wherein the protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer; and the first position is a position, corresponding to a first overlapping region, above the second electrode layer, and the first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped, further comprising a conductive layer arranged on a surface, far away from the substrate, of the first electrode layer and a surface, far away from the substrate, of the second electrode layer, wherein the protective layer is arranged at a position such that the protective layer does not cover the conductive layer, wherein the protective layer comprises a first protective sublayer and a second protective sublayer; the first protective sublayer is arranged at a position on a surface of the second electrode layer and a surface of the piezoelectric layer surrounding the first overlapping region far away from the substrate of the acoustic wave device, such that the first protective sublayer does not cover the conductive layer; the second protective sublayer is arranged at the first position above the surface, far away from the substrate, of the second electrode layer; the second protective sublayer is also arranged on a surface, far away from the substrate, of the first protective sublayer; and the first protective sublayer and the second protective sublayer are connected together, wherein a position of the first protective sublayer is at a preset distance from a position of the first overlapping region in a direction parallel to the substrate, and the preset distance is longer than 0.001 um, wherein the device further comprises a first through hole passing through the second electrode layer, the piezoelectric layer and the first electrode layer and a second through hole passing through the second protective sublayer, wherein the second through hole is communicated with the first through hole.