A manufacturing method of a transistor on color filter type organic light emitting diode display, comprising the steps of: Step S1, providing a substrate, and performing clean and pre-cure to the substrate; Step S2, depositing a black light shielding thin film and patterning the black light shielding thin film to form a black matrix; Step S3, sequentially depositing color filters of various colors in the black matrix to form a color filter layer; Step S4, depositing a planarization layer on the color filter layer; Step S5, depositing a first metal layer on the planarization layer and patterning the first metal layer to form a gate; Step S6, depositing a gate insulation layer covering the gate and the planarization layer; Step S7, preparing a zinc oxide solution mixed with lithium and coating the zinc oxide solution mixed with lithium on the gate insulation layer by spin coating to form a zinc oxide coating layer mixed with lithium, then annealing the zinc oxide coating layer mixed with lithium at a temperature of at least 200 °C and patterning the zinc oxide coating layer mixed with lithium to form a channel layer; Step S8, depositing an etching stopper layer and patterning the etching stopper layer to form a first through hole and a second through hole which respectively expose two sides of the channel layer; Step S9, depositing a second metal layer on the etching stopper layer and patterning the second metal layer to form a source and a drain; wherein the source and the drain respectively contact the two sides of the channel layer via the first through hole and the second through hole; Step S10, sequentially preparing a protective layer, an anode, a pixel definition layer, an organic light emitting diode layer and a cathode on the etching stopper layer, the source, and the drain; wherein for Steps S5 to S9 the temperature is less than 230 °C. Step S1, providing a substrate, and performing clean and pre-cure to the substrate; Step S2, depositing a black light shielding thin film and patterning the black light shielding thin film to form a black matrix; Step S3, sequentially depositing color filters of various colors in the black matrix to form a color filter layer; Step S4, depositing a planarization layer on the color filter layer; Step S5, depositing a first metal layer on the planarization layer and patterning the first metal layer to form a gate; Step S6, depositing a gate insulation layer covering the gate and the planarization layer; Step S7, preparing a zinc oxide solution mixed with lithium and coating the zinc oxide solution mixed with lithium on the gate insulation layer by spin coating to form a zinc oxide coating layer mixed with lithium, then annealing the zinc oxide coating layer mixed with lithium at a temperature of at least 200 °C and patterning the zinc oxide coating layer mixed with lithium to form a channel layer; Step S8, depositing an etching stopper layer and patterning the etching stopper layer to form a first through hole and a second through hole which respectively expose two sides of the channel layer; Step S9, depositing a second metal layer on the etching stopper layer and patterning the second metal layer to form a source and a drain; wherein the source and the drain respectively contact the two sides of the channel layer via the first through hole and the second through hole; Step S10, sequentially preparing a protective layer, an anode, a pixel definition layer, an organic light emitting diode layer and a cathode on the etching stopper layer, the source, and the drain; wherein for Steps S5 to S9 the temperature is less than 230 °C.