An assembly comprising: an insulated gate bipolar transistor (IGBT), coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT; and a failure mode detection unit for determining whether the IGBT is faulted and differentiating fault types including a gate driver fault, failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault, based on a timing sequence of the gating signal and the feedback signal; characterised in that the failure mode detection unit is programmed to: compare: (a) an interval t 1 between a rising edge of the gating signal and a rising edge of a first feedback signal pulse that immediately follows the rising edge of the gating signal, with a maximum turn-on ack-wait time T 1; (b) a duration t 2 of the first feedback signal pulse, with a maximum turn-on ack time T 2; (c) an interval t 3 between a falling edge of the first feedback signal pulse and a rising edge of a second feedback signal pulse that immediately follows the first feedback signal pulse, with a short-circuit blanking time T 3-1 and an over-voltage blanking time T 3-2; (d) a duration t 4 of the second feedback signal pulse, with a maximum over-voltage time T 4; (e) an interval t 5 between a falling edge of the gating signal and a rising edge of a third feedback signal pulse that immediately follows the falling edge of the gating signal pulse, with a maximum turn-off ack-wait time T 5; and (f) a duration t 6 of the third feedback signal pulse, with a maximum turn-off ack time T 6; and diagnose that: a gate driver fault occurs if t 1 >T 1; a failed turn-on fault occurs to the IGBT if t 1 ≤T 1 and t 2 >T 2; a short-circuit fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2 and T 3-2 ≤t 3 ≤T 3-1; a turn-on over-voltage fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2, t 3 ≤T 3-2 and t 4 ≥T 4; a turn-off over-voltage fault occurs to the IGBT if t 5 >T 5 and t 6 >T 6. an insulated gate bipolar transistor (IGBT), coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT; and a failure mode detection unit for determining whether the IGBT is faulted and differentiating fault types including a gate driver fault, failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault, based on a timing sequence of the gating signal and the feedback signal; compare: (a) an interval t 1 between a rising edge of the gating signal and a rising edge of a first feedback signal pulse that immediately follows the rising edge of the gating signal, with a maximum turn-on ack-wait time T 1; (b) a duration t 2 of the first feedback signal pulse, with a maximum turn-on ack time T 2; (c) an interval t 3 between a falling edge of the first feedback signal pulse and a rising edge of a second feedback signal pulse that immediately follows the first feedback signal pulse, with a short-circuit blanking time T 3-1 and an over-voltage blanking time T 3-2; (d) a duration t 4 of the second feedback signal pulse, with a maximum over-voltage time T 4; (e) an interval t 5 between a falling edge of the gating signal and a rising edge of a third feedback signal pulse that immediately follows the falling edge of the gating signal pulse, with a maximum turn-off ack-wait time T 5; and (f) a duration t 6 of the third feedback signal pulse, with a maximum turn-off ack time T 6; and (a) an interval t 1 between a rising edge of the gating signal and a rising edge of a first feedback signal pulse that immediately follows the rising edge of the gating signal, with a maximum turn-on ack-wait time T 1; (b) a duration t 2 of the first feedback signal pulse, with a maximum turn-on ack time T 2; (c) an interval t 3 between a falling edge of the first feedback signal pulse and a rising edge of a second feedback signal pulse that immediately follows the first feedback signal pulse, with a short-circuit blanking time T 3-1 and an over-voltage blanking time T 3-2; (d) a duration t 4 of the second feedback signal pulse, with a maximum over-voltage time T 4; (e) an interval t 5 between a falling edge of the gating signal and a rising edge of a third feedback signal pulse that immediately follows the falling edge of the gating signal pulse, with a maximum turn-off ack-wait time T 5; and (f) a duration t 6 of the third feedback signal pulse, with a maximum turn-off ack time T 6; and diagnose that: a gate driver fault occurs if t 1 >T 1; a failed turn-on fault occurs to the IGBT if t 1 ≤T 1 and t 2 >T 2; a short-circuit fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2 and T 3-2 ≤t 3 ≤T 3-1; a turn-on over-voltage fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2, t 3 ≤T 3-2 and t 4 ≥T 4; a turn-off over-voltage fault occurs to the IGBT if t 5 >T 5 and t 6 >T 6. a gate driver fault occurs if t 1 >T 1; a failed turn-on fault occurs to the IGBT if t 1 ≤T 1 and t 2 >T 2; a short-circuit fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2 and T 3-2 ≤t 3 ≤T 3-1; a turn-on over-voltage fault occurs to the IGBT if t 1 ≤T 1, t 2 ≤T 2, t 3 ≤T 3-2 and t 4 ≥T 4; a turn-off over-voltage fault occurs to the IGBT if t 5 >T 5 and t 6 >T 6.