An infrared detection device (100, 200), including at least: - an electronic readout circuit made over and/or in a first semiconductor substrate, and over which several electrical interconnection levels are arranged such that a first electrical interconnection level is arranged between the electronic readout circuit and a last electrical interconnection level; - an etching stop layer arranged between the last and a penultimate electrical interconnection level and able to withstand etching of a first inter-metal dielectric layer arranged between the etching stop layer and the last electrical interconnection level; - an infrared thermal detector (57, 67) electrically connected to the electronic readout circuit by at least one first electrically-conductive via of the last electrical interconnection level which crosses the etching stop layer; - a connection pad formed by the last electrical interconnection level, electrically connected to the electronic readout circuit by at least one second electrically-conductive via of the last electrical interconnection level which crosses the etching stop layer, and able to be electrically contacted from outside the infrared detection device (100, 200); wherein each of the infrared thermal detector (57, 67) and the connection pad is spaced apart from the etching stop layer by a non-zero distance substantially equal to each other, wherein the first and second electrically-conductive vias (30, 31) are respectively electrically connected to first and second portions (21a, 21b) of a metal line of a penultimate electrical interconnection level, and wherein an empty space formed in the first inter-metal dielectric layer surrounds the first electrically-conductive via and extends under the infrared thermal detector (57, 67), and wherein, amongst the infrared thermal detector (57, 67) and the connection pad, only the infrared thermal detector (57, 67) includes at least one absorbent element (55, 65) able to absorb an infrared radiation intended to be detected by the infrared thermal detector (57, 67) and at least one thermometric element (56, 66) coupled to the absorbent element (55, 65), and wherein the infrared thermal detector (57, 67) includes a suspended membrane located at said non-zero distance from the etching stop layer, the suspended membrane including the absorbent element (55, 65) and the thermometric element (56, 66). - an electronic readout circuit made over and/or in a first semiconductor substrate, and over which several electrical interconnection levels are arranged such that a first electrical interconnection level is arranged between the electronic readout circuit and a last electrical interconnection level; - an etching stop layer arranged between the last and a penultimate electrical interconnection level and able to withstand etching of a first inter-metal dielectric layer arranged between the etching stop layer and the last electrical interconnection level; - an infrared thermal detector (57, 67) electrically connected to the electronic readout circuit by at least one first electrically-conductive via of the last electrical interconnection level which crosses the etching stop layer; - a connection pad formed by the last electrical interconnection level, electrically connected to the electronic readout circuit by at least one second electrically-conductive via of the last electrical interconnection level which crosses the etching stop layer, and able to be electrically contacted from outside the infrared detection device (100, 200); wherein each of the infrared thermal detector (57, 67) and the connection pad is spaced apart from the etching stop layer by a non-zero distance substantially equal to each other, wherein the first and second electrically-conductive vias (30, 31) are respectively electrically connected to first and second portions (21a, 21b) of a metal line of a penultimate electrical interconnection level, and wherein an empty space formed in the first inter-metal dielectric layer surrounds the first electrically-conductive via and extends under the infrared thermal detector (57, 67), and wherein, amongst the infrared thermal detector (57, 67) and the connection pad, only the infrared thermal detector (57, 67) includes at least one absorbent element (55, 65) able to absorb an infrared radiation intended to be detected by the infrared thermal detector (57, 67) and at least one thermometric element (56, 66) coupled to the absorbent element (55, 65), and wherein the infrared thermal detector (57, 67) includes a suspended membrane located at said non-zero distance from the etching stop layer, the suspended membrane including the absorbent element (55, 65) and the thermometric element (56, 66).