A side by side semiconductor package for use in a package on package structure, the semiconductor package comprising: a first die (310, 510) having an active side and a backside; a second die (320, 520) having an active side and a backside, the second die being horizontally adjacent the first die and spaced therefrom; a bridge interposer (330, 530) having an active side (331, 531) and a backside (332, 532), the bridge interposer active side facing the active sides of the first die and the second die and partially horizontally overlapping the first die and the second die, the bridge interposer providing an interconnection between the first die and the second die; a first substrate (340, 540) having a cavity (341, 541) therein and attached to the backside (332, 532) of the bridge interposer such that the bridge interposer is positioned within the first substrate cavity (341, 541); a second substrate (350, 550) having a cavity therein (351, 551) and attached to the backside (312, 512) of the first die and the backside (322, 522) of the second die such that the first die and the second die are positioned within the second substrate cavity; and a thermal element (360, 560) embedded in the cavity of the second substrate and attached to the backside of the first die and the backside of the second die, the thermal element providing a heat path and heat storage for the first die and the second die wherein the first substrate (340, 540) is connected to the second substrate (350, 550) through a plurality of solder balls on an edge of the first substrate (340, 540) and on an edge of the second substrate (350, 550) wherein each solder ball provides a spacing between the first substrate (340, 540) and the second substrate (350, 550) and wherein each solder ball connects an electrical via formed in the first substrate to an electrical via formed in the second substrate for forming electrical pathways through the side by side semiconductor package. a first die (310, 510) having an active side and a backside; a second die (320, 520) having an active side and a backside, the second die being horizontally adjacent the first die and spaced therefrom; a bridge interposer (330, 530) having an active side (331, 531) and a backside (332, 532), the bridge interposer active side facing the active sides of the first die and the second die and partially horizontally overlapping the first die and the second die, the bridge interposer providing an interconnection between the first die and the second die; a first substrate (340, 540) having a cavity (341, 541) therein and attached to the backside (332, 532) of the bridge interposer such that the bridge interposer is positioned within the first substrate cavity (341, 541); a second substrate (350, 550) having a cavity therein (351, 551) and attached to the backside (312, 512) of the first die and the backside (322, 522) of the second die such that the first die and the second die are positioned within the second substrate cavity; and a thermal element (360, 560) embedded in the cavity of the second substrate and attached to the backside of the first die and the backside of the second die, the thermal element providing a heat path and heat storage for the first die and the second die wherein the first substrate (340, 540) is connected to the second substrate (350, 550) through a plurality of solder balls on an edge of the first substrate (340, 540) and on an edge of the second substrate (350, 550) wherein each solder ball provides a spacing between the first substrate (340, 540) and the second substrate (350, 550) and wherein each solder ball connects an electrical via formed in the first substrate to an electrical via formed in the second substrate for forming electrical pathways through the side by side semiconductor package.