A power module semiconductor device, comprising: an insulating substrate having a main surface; a first pattern of a copper plate layer disposed on the main surface of the insulating substrate; a first MOSFET disposed on the first pattern; a second MOSFET disposed on the first pattern; a first upper surface plate electrode electrically connected to the first MOSFET and the second MOSFET; a gate signal electrode pattern disposed on the insulating substrate; a first wire connected between a control electrode of the first MOSFET and the gate signal electrode pattern; a second wire connected between a control electrode of the second MOSFET and the gate signal electrode pattern; a first pillar electrode electrically connecting between the first MOSFET and the first upper surface plate electrode; a second pillar electrode electrically connecting between the second MOSFET and the first upper surface plate electrode, whereby the first and second MOSFETs are electrically connected in parallel; a first power terminal, a second power terminal, and a signal terminal electrically connected to the first MOSFET and the second MOSFET; a resin layer covering the first MOSFET and the second MOSFET and the insulating substrate, wherein: the resin layer has mutually opposing main surfaces and side surfaces and a long-side direction parallel to the main surface of the resin layer and a vertical direction of the module is the same with respect to the main surface of the insulating substrate and the main surfaces of the resin layer; the signal terminal extends in the vertical direction; the first and second power terminals are disposed in a parallel direction with the main surfaces of the resin layer surface; wherein the first and second power terminals are disposed so as to extend from mutually opposite side surfaces of the resin layer in mutually opposite directions, along the long-side direction of the resin layer, thereby forming a straight wiring structure; and the first and second power terminals are disposed in the vertical direction of the resin layer so as to form a predetermined step height between the first and second power terminals in the vertical direction. an insulating substrate having a main surface; a first pattern of a copper plate layer disposed on the main surface of the insulating substrate; a first MOSFET disposed on the first pattern; a second MOSFET disposed on the first pattern; a first upper surface plate electrode electrically connected to the first MOSFET and the second MOSFET; a gate signal electrode pattern disposed on the insulating substrate; a first wire connected between a control electrode of the first MOSFET and the gate signal electrode pattern; a second wire connected between a control electrode of the second MOSFET and the gate signal electrode pattern; a first pillar electrode electrically connecting between the first MOSFET and the first upper surface plate electrode; a second pillar electrode electrically connecting between the second MOSFET and the first upper surface plate electrode, whereby the first and second MOSFETs are electrically connected in parallel; a first power terminal, a second power terminal, and a signal terminal electrically connected to the first MOSFET and the second MOSFET; a resin layer covering the first MOSFET and the second MOSFET and the insulating substrate, wherein: the resin layer has mutually opposing main surfaces and side surfaces and a long-side direction parallel to the main surface of the resin layer and a vertical direction of the module is the same with respect to the main surface of the insulating substrate and the main surfaces of the resin layer; the signal terminal extends in the vertical direction; the first and second power terminals are disposed in a parallel direction with the main surfaces of the resin layer surface; wherein the first and second power terminals are disposed so as to extend from mutually opposite side surfaces of the resin layer in mutually opposite directions, along the long-side direction of the resin layer, thereby forming a straight wiring structure; and the first and second power terminals are disposed in the vertical direction of the resin layer so as to form a predetermined step height between the first and second power terminals in the vertical direction. the resin layer has mutually opposing main surfaces and side surfaces and a long-side direction parallel to the main surface of the resin layer and a vertical direction of the module is the same with respect to the main surface of the insulating substrate and the main surfaces of the resin layer; the signal terminal extends in the vertical direction; the first and second power terminals are disposed in a parallel direction with the main surfaces of the resin layer surface; wherein the first and second power terminals are disposed so as to extend from mutually opposite side surfaces of the resin layer in mutually opposite directions, along the long-side direction of the resin layer, thereby forming a straight wiring structure; and the first and second power terminals are disposed in the vertical direction of the resin layer so as to form a predetermined step height between the first and second power terminals in the vertical direction.