A manufacturing method for an optical deflector including a mirror part, a movable support part, a fixed support part, first piezoelectric actuators (13a, 13b) interposed between the mirror part and the movable support part to turn the mirror part reciprocally about a first rotation axis (ax) at a resonance frequency, and second piezoelectric actuators (15a, 15b) interposed between the movable support part and the fixed support part to turn the mirror part reciprocally about a second rotation axis (ay) intersecting the first rotation axis at a non-resonant frequency lower than the resonance frequency, the manufacturing method comprising: a first process in which etching regions and non-etching regions are set on a surface of a first Si wafer on a second SiO 2 side, where the first Si wafer has a laminated structure in which a first SiO 2 layer, first active Si layer and second SiO 2 layer are arranged in order in a thickness direction, at least forming regions of the second piezoelectric actuators (15a, 15b) are included in the etching regions, at least forming regions of the movable support part are included in the non-etching regions, and etching is carried out only on the etching regions of the first Si wafer from the second SiO 2 side to form cavities in the first active Si layer to open to the second SiO 2 side; a second process of covering an exposed surface of the cavities with a third SiO 2 layer; a third process in which a surface of a second Si wafer on a second Si layer side, where the second Si wafer has a laminated structure of a fourth SiO 2 layer and a second Si layer in the thickness direction, is joined to the surface of the first Si wafer on the second SiO 2 layer side to form a third Si wafer with the cavities enclosed therein; a fourth process of laminating a lower electrode layer, a piezoelectric film layer, and an upper electrode layer in order over an entire surface of the third Si wafer on the first SiO 2 layer side as a laminated structure layer of piezoelectric actuators; a fifth process in which anisotropic dry etching is carried out from a surface side of the third Si wafer to a depth of reaching the surface side of the second SiO 2 layer to form the first piezoelectric actuators c and the second piezoelectric actuators (15a, 15b); a sixth process in which etching is carried out from a back side of the third Si wafer to a depth of reaching a back side of the second SiO 2 layer to form, on the back side of the third Si wafer, a recess surrounded by an inner wall of the fixed support part; and a seventh process in which anisotropic dry etching is carried out from the back side of the third Si wafer in a depth direction of the recess to remove the second SiO 2 layer and the third SiO 2 layer. a first process in which etching regions and non-etching regions are set on a surface of a first Si wafer on a second SiO 2 side, where the first Si wafer has a laminated structure in which a first SiO 2 layer, first active Si layer and second SiO 2 layer are arranged in order in a thickness direction, at least forming regions of the second piezoelectric actuators (15a, 15b) are included in the etching regions, at least forming regions of the movable support part are included in the non-etching regions, and etching is carried out only on the etching regions of the first Si wafer from the second SiO 2 side to form cavities in the first active Si layer to open to the second SiO 2 side; a second process of covering an exposed surface of the cavities with a third SiO 2 layer; a third process in which a surface of a second Si wafer on a second Si layer side, where the second Si wafer has a laminated structure of a fourth SiO 2 layer and a second Si layer in the thickness direction, is joined to the surface of the first Si wafer on the second SiO 2 layer side to form a third Si wafer with the cavities enclosed therein; a fourth process of laminating a lower electrode layer, a piezoelectric film layer, and an upper electrode layer in order over an entire surface of the third Si wafer on the first SiO 2 layer side as a laminated structure layer of piezoelectric actuators; a fifth process in which anisotropic dry etching is carried out from a surface side of the third Si wafer to a depth of reaching the surface side of the second SiO 2 layer to form the first piezoelectric actuators c and the second piezoelectric actuators (15a, 15b); a sixth process in which etching is carried out from a back side of the third Si wafer to a depth of reaching a back side of the second SiO 2 layer to form, on the back side of the third Si wafer, a recess surrounded by an inner wall of the fixed support part; and a seventh process in which anisotropic dry etching is carried out from the back side of the third Si wafer in a depth direction of the recess to remove the second SiO 2 layer and the third SiO 2 layer.