A pixel formed in a semiconductor substrate with a two-dimensional plane surface for use in an image sensor, comprising: an active region for converting radiation (In) incident on said active region into charge carriers of a first and a second charge type, separating the charge carriers of the first charge type from the charge carriers of the second charge type and accumulating charge carriers of at least one charge type, and multiple detection regions for electronically detecting the accumulated charge carriers, the detection regions being geometrically and electrically separated from the active region, the active region having field-generating means (3, C1-C4) for generating a lateral electric drift field at the semiconductor surface in the active region, the field-generating means comprising a resistive electrode layer isolated from the semiconductor substrate and at least two contacts (C1-C4) for applying an electric potential difference along the electrode layer, wherein the field-generating means are configured for periodically changing said drift field synchronously with a modulation frequency of the incident radiation (In), wherein each period of the modulation frequency is divided into a predetermined number n of time intervals, and wherein a separate detection region (D1-Dn) is provided for each time interval, and wherein charge carriers are accumulated in the corresponding detection region (D1-Dn) during each time interval, characterized in that the electrode layer has a dendritic or arborescent shape and is connected to the at least two contacts so as to form at least one connection between the at least two contacts, whereas the electrode layer is formed by a resistive material and is adapted to let a current flow through the connection area in order to provide a two-dimensional position-dependent potential distribution in the electrode layer producing the two-dimensional lateral electric drift field. an active region for converting radiation (In) incident on said active region into charge carriers of a first and a second charge type, separating the charge carriers of the first charge type from the charge carriers of the second charge type and accumulating charge carriers of at least one charge type, and multiple detection regions for electronically detecting the accumulated charge carriers, the detection regions being geometrically and electrically separated from the active region, the active region having field-generating means (3, C1-C4) for generating a lateral electric drift field at the semiconductor surface in the active region, the field-generating means comprising a resistive electrode layer isolated from the semiconductor substrate and at least two contacts (C1-C4) for applying an electric potential difference along the electrode layer, wherein the field-generating means are configured for periodically changing said drift field synchronously with a modulation frequency of the incident radiation (In), wherein each period of the modulation frequency is divided into a predetermined number n of time intervals, and wherein a separate detection region (D1-Dn) is provided for each time interval, and wherein charge carriers are accumulated in the corresponding detection region (D1-Dn) during each time interval, characterized in that the electrode layer has a dendritic or arborescent shape and is connected to the at least two contacts so as to form at least one connection between the at least two contacts, whereas the electrode layer is formed by a resistive material and is adapted to let a current flow through the connection area in order to provide a two-dimensional position-dependent potential distribution in the electrode layer producing the two-dimensional lateral electric drift field.