A pixel comprising a photoelectric conversion element, a switching element, a scan line, a data line, a bias line and a bias electrode, wherein: the scan line, the bias line and the bias electrode are formed at the same time proximate to a surface of a substrate during the same metal process step such that the bias electrode and the bias line are electrically connected and the bias line is substantially parallel to the scan line, the scan line including a gate electrode; the switching element is proximate to the surface of the substrate; a gate insulating layer is over the entire surface of the substrate including the scan line and the bias line; a passivation layer is disposed over the entire surface of the substrate on the gate insulating layer; the gate insulating layer and the passivation layer include a contact window over the bias electrode: a metal layer is over at least the bias line and covers the bias electrode, the metal layer includes a first terminal of the photoelectric conversion element and is electrically connected to the bias electrode through the contact window; the data line provides a path for charge carriers from the photoelectric conversion element; and the switching element comprises: a first terminal; a second terminal electrically connected to the data line; and the gate electrode; wherein the first terminal and the second terminal of the switching element are electrically coupled based on a scan signal over the scan line to the gate electrode; a second terminal of the photoelectric conversion element is electrically coupled to the first terminal of the switching element, wherein the photoelectric conversion element comprises a semiconductor layer between its first terminal and its second terminal. the scan line, the bias line and the bias electrode are formed at the same time proximate to a surface of a substrate during the same metal process step such that the bias electrode and the bias line are electrically connected and the bias line is substantially parallel to the scan line, the scan line including a gate electrode; the switching element is proximate to the surface of the substrate; a gate insulating layer is over the entire surface of the substrate including the scan line and the bias line; a passivation layer is disposed over the entire surface of the substrate on the gate insulating layer; the gate insulating layer and the passivation layer include a contact window over the bias electrode: a metal layer is over at least the bias line and covers the bias electrode, the metal layer includes a first terminal of the photoelectric conversion element and is electrically connected to the bias electrode through the contact window; the data line provides a path for charge carriers from the photoelectric conversion element; and the switching element comprises: a first terminal; a second terminal electrically connected to the data line; and the gate electrode; wherein the first terminal and the second terminal of the switching element are electrically coupled based on a scan signal over the scan line to the gate electrode; a second terminal of the photoelectric conversion element is electrically coupled to the first terminal of the switching element, wherein the photoelectric conversion element comprises a semiconductor layer between its first terminal and its second terminal. a metal layer is over at least the bias line and covers the bias electrode, the metal layer includes a first terminal of the photoelectric conversion element and is electrically connected to the bias electrode through the contact window; the data line provides a path for charge carriers from the photoelectric conversion element; and the switching element comprises: a first terminal; a second terminal electrically connected to the data line; and the gate electrode; a first terminal; a second terminal electrically connected to the data line; and the gate electrode; wherein the first terminal and the second terminal of the switching element are electrically coupled based on a scan signal over the scan line to the gate electrode; a second terminal of the photoelectric conversion element is electrically coupled to the first terminal of the switching element, a second terminal of the photoelectric conversion element is electrically coupled to the first terminal of the switching element, wherein the photoelectric conversion element comprises a semiconductor layer between its first terminal and its second terminal.