A radiation detector, comprising: - a scintillator that converts radiation of a first energy to radiation of a second energy; - a semiconductor substrate incorporating dopants of a first conductivity type; - a sensing region formed in the substrate and incorporating dopants of a second conductivity type, wherein a sensing junction located at an interface between the sensing region and the substrate and positioned at a first depth below a surface of the substrate collects charge carriers generated in the substrate by the radiation of the second energy; - wherein the radiation of the first energy is x-ray radiation, and wherein the radiation of the second energy is visible light radiation; - wherein the radiation of the first energy penetrates into the substrate to a penetration depth greater than a penetration depth of the radiation of the second energy; the radiation detector being characterized in that it further comprises a shielding region (23a, 23b) formed in the substrate and incorporating dopants of the second conductivity type, wherein a shielding junction (27a, 27b) located at an interface between the shielding region (23a, 23b) and the substrate and positioned at a deeper depth below the surface of the substrate than the first depth collects charge carriers generated in the substrate by radiation of the first energy; - wherein the depth of the sensing junction correlates substantially with the penetration depth of the radiation of the second energy, and wherein the depth of the shielding junction (27a, 27b) correlates substantially with the penetration depth of the radiation of the first energy. - a scintillator that converts radiation of a first energy to radiation of a second energy; - a semiconductor substrate incorporating dopants of a first conductivity type; - a sensing region formed in the substrate and incorporating dopants of a second conductivity type, wherein a sensing junction located at an interface between the sensing region and the substrate and positioned at a first depth below a surface of the substrate collects charge carriers generated in the substrate by the radiation of the second energy; - wherein the radiation of the first energy is x-ray radiation, and wherein the radiation of the second energy is visible light radiation; - wherein the radiation of the first energy penetrates into the substrate to a penetration depth greater than a penetration depth of the radiation of the second energy; the radiation detector being characterized in that it further comprises a shielding region (23a, 23b) formed in the substrate and incorporating dopants of the second conductivity type, wherein a shielding junction (27a, 27b) located at an interface between the shielding region (23a, 23b) and the substrate and positioned at a deeper depth below the surface of the substrate than the first depth collects charge carriers generated in the substrate by radiation of the first energy; - wherein the depth of the sensing junction correlates substantially with the penetration depth of the radiation of the second energy, and wherein the depth of the shielding junction (27a, 27b) correlates substantially with the penetration depth of the radiation of the first energy.