A tunnel magneto-resistive, TMR, sensor, comprising: a first TMR device (802) comprising: a first pinned layer (818), a first free layer (824), and a first tunnel barrier (822) disposed between the first pinned layer (818) and the first free layer (824); the first TMR device (802) having a first magnetic sensitivity and a first resistance as a function of the first magnetic sensitivity wherein, the first pinned layer (818) has a first pinned magnetization and; the first free layer (824) has a first free layer magnetization at a first magnetization angle to the first pinned magnetization of the first pinned layer (818), wherein the first resistance of the first TMR device (802) is a function of the first magnetization angle; a second TMR device (802) comprising: a second pinned layer (818), a second free layer (824), and a second tunnel barrier (822) disposed between the second pinned layer (818) and the second free layer (824) the second TMR device (802) having a second magnetic sensitivity different from the first magnetic sensitivity of the first TMR device (802), and having a second resistance as a function of the second magnetic sensitivity; wherein, the second pinned layer (818) has a second pinned magnetization; and the second free layer (824) has a second free layer magnetization at a second magnetization angle to the second pinned magnetization of the second pinned layer (818), the second magnetization angle different from the first magnetization angle, wherein the second resistance of the second TMR device (802) is a function of the second magnetization angle, the TMR sensor characterized in that: the first free layer magnetization is at least ninety degrees from the first pinned magnetization and substantially out-of-plane to the first pinned magnetization and; the second free layer magnetization is between sixty and eighty degrees from the second pinned magnetization and substantially out-of-plane to the second pinned magnetization a first TMR device (802) comprising: a first pinned layer (818), a first free layer (824), and a first tunnel barrier (822) disposed between the first pinned layer (818) and the first free layer (824); the first TMR device (802) having a first magnetic sensitivity and a first resistance as a function of the first magnetic sensitivity wherein, the first pinned layer (818) has a first pinned magnetization and; the first free layer (824) has a first free layer magnetization at a first magnetization angle to the first pinned magnetization of the first pinned layer (818), wherein the first resistance of the first TMR device (802) is a function of the first magnetization angle; a first pinned layer (818), a first free layer (824), and a first tunnel barrier (822) disposed between the first pinned layer (818) and the first free layer (824); the first TMR device (802) having a first magnetic sensitivity and a first resistance as a function of the first magnetic sensitivity wherein, the first pinned layer (818) has a first pinned magnetization and; the first free layer (824) has a first free layer magnetization at a first magnetization angle to the first pinned magnetization of the first pinned layer (818), wherein the first resistance of the first TMR device (802) is a function of the first magnetization angle; a second TMR device (802) comprising: a second pinned layer (818), a second free layer (824), and a second tunnel barrier (822) disposed between the second pinned layer (818) and the second free layer (824) the second TMR device (802) having a second magnetic sensitivity different from the first magnetic sensitivity of the first TMR device (802), and having a second resistance as a function of the second magnetic sensitivity; wherein, the second pinned layer (818) has a second pinned magnetization; and the second free layer (824) has a second free layer magnetization at a second magnetization angle to the second pinned magnetization of the second pinned layer (818), the second magnetization angle different from the first magnetization angle, wherein the second resistance of the second TMR device (802) is a function of the second magnetization angle, a second pinned layer (818), a second free layer (824), and a second tunnel barrier (822) disposed between the second pinned layer (818) and the second free layer (824) the second TMR device (802) having a second magnetic sensitivity different from the first magnetic sensitivity of the first TMR device (802), and having a second resistance as a function of the second magnetic sensitivity; wherein, the second pinned layer (818) has a second pinned magnetization; and the second free layer (824) has a second free layer magnetization at a second magnetization angle to the second pinned magnetization of the second pinned layer (818), the second magnetization angle different from the first magnetization angle, wherein the second resistance of the second TMR device (802) is a function of the second magnetization angle, the TMR sensor characterized in that: the first free layer magnetization is at least ninety degrees from the first pinned magnetization and substantially out-of-plane to the first pinned magnetization and; the second free layer magnetization is between sixty and eighty degrees from the second pinned magnetization and substantially out-of-plane to the second pinned magnetization the first free layer magnetization is at least ninety degrees from the first pinned magnetization and substantially out-of-plane to the first pinned magnetization and; the second free layer magnetization is between sixty and eighty degrees from the second pinned magnetization and substantially out-of-plane to the second pinned magnetization