A capacitive sensor comprising a substrate; an electrode structure comprising at least a first electrode and a second electrode; and a sensing layer arranged between the first electrode and the second electrode; and a measurement circuit (40, 500, 600) configured to measure the capacitance of the electrode structure by applying, at a first measurement phase, a first pair of electrical potentials comprising a first electrical potential of the first electrode and a first electrical potential of the second electrode to the first electrode and the second electrode; and applying, at a second measurement phase, a second pair of electrical potentials comprising a second electrical potential of the first electrode and a second electrical potential of the second electrode to the first electrode and the second electrode; characterized in that the first electrical potential of the second electrode and the second electrical potential of the second electrode are different from each other; wherein the first pair of electrical potentials and the second pair of electrical potentials are applied such that 0 < V A 1 − V A 2 < = V B 2 − V B 1 * C BE / C AE; or V B 2 − V B 1 * C BE / C AE < = V A 1 − V A 2 < 0; wherein V A1 is the first electrical potential of the first electrode at the first measurement phase; V A2 is the second electrical potential of the first electrode at the second measurement phase; V B1 is the first electrical potential of the second electrode at the first measurement phase; V B2 is the second electrical potential of the second electrode at the second measurement phase; C AE is a capacitance between the first electrode and a virtual electrode arranged on the surface of the sensing layer; and C BE is a capacitance between the second electrode and the virtual electrode arranged on the surface of the sensing layer. a substrate; an electrode structure comprising at least a first electrode and a second electrode; and a sensing layer arranged between the first electrode and the second electrode; and a measurement circuit (40, 500, 600) configured to measure the capacitance of the electrode structure by applying, at a first measurement phase, a first pair of electrical potentials comprising a first electrical potential of the first electrode and a first electrical potential of the second electrode to the first electrode and the second electrode; and applying, at a second measurement phase, a second pair of electrical potentials comprising a second electrical potential of the first electrode and a second electrical potential of the second electrode to the first electrode and the second electrode; characterized in that measure the capacitance of the electrode structure by applying, at a first measurement phase, a first pair of electrical potentials comprising a first electrical potential of the first electrode and a first electrical potential of the second electrode to the first electrode and the second electrode; and applying, at a second measurement phase, a second pair of electrical potentials comprising a second electrical potential of the first electrode and a second electrical potential of the second electrode to the first electrode and the second electrode; characterized in that the first electrical potential of the second electrode and the second electrical potential of the second electrode are different from each other; wherein the first pair of electrical potentials and the second pair of electrical potentials are applied such that 0 < V A 1 − V A 2 < = V B 2 − V B 1 * C BE / C AE; or V B 2 − V B 1 * C BE / C AE < = V A 1 − V A 2 < 0; wherein V A1 is the first electrical potential of the first electrode at the first measurement phase; V A2 is the second electrical potential of the first electrode at the second measurement phase; V B1 is the first electrical potential of the second electrode at the first measurement phase; V B2 is the second electrical potential of the second electrode at the second measurement phase; C AE is a capacitance between the first electrode and a virtual electrode arranged on the surface of the sensing layer; and C BE is a capacitance between the second electrode and the virtual electrode arranged on the surface of the sensing layer.