A method for forming a semiconductor structure, comprising: forming a plurality of fuses over a semiconductor substrate; forming a plurality of interconnect layers over the semiconductor substrate, wherein the plurality of interconnect layers comprise alternating metal interconnects layers (402, 406) and dielectric layers (404, 408) having vias formed therethrough; forming a seal ring, which contiguously extends through the plurality of metal interconnect layers and dielectric layers wherein the seal ring surrounds active circuitry in an active region formed in and on the semiconductor substrate, wherein a first end portion of each fuse of the plurality of fuses is positioned in the active region and a second end portion of each fuse of the plurality of fuses is positioned in a seal ring region below the seal ring between the active region and a scribe street, forming a plurality of interconnect pads in the active region over plating bus portions at a top surface of the plurality of interconnect layers, wherein each interconnect pad of the plurality of interconnect pads couples via respective vias (416,417,308) and metal interconnects (410, 414) to the first end portion of a respective one of the plurality of fuses; forming a plating contact over the seal ring; wherein the plating contact couples via the seal ring to the second end portion of each one of the plurality of fuses, and wherein when each fuse of the plurality of fuses is in a conductive state, the fuse electrically connects the respective one of the plurality of interconnect pads to the plating contact; and electroplating a conductive layer on each one of the plurality of interconnect pads by applying a direct potential to the plating contact; and after the step of electroplating the conductive layer on the plurality of interconnect pads, providing a current through at least a subset of the plurality of interconnect pads to change a state of the fuses electrically connected to the subset of the plurality of interconnect pads to a non-conductive state. forming a plurality of fuses over a semiconductor substrate; forming a plurality of interconnect layers over the semiconductor substrate, wherein the plurality of interconnect layers comprise alternating metal interconnects layers (402, 406) and dielectric layers (404, 408) having vias formed therethrough; forming a seal ring, which contiguously extends through the plurality of metal interconnect layers and dielectric layers wherein the seal ring surrounds active circuitry in an active region formed in and on the semiconductor substrate, wherein a first end portion of each fuse of the plurality of fuses is positioned in the active region and a second end portion of each fuse of the plurality of fuses is positioned in a seal ring region below the seal ring between the active region and a scribe street, forming a plurality of interconnect pads in the active region over plating bus portions at a top surface of the plurality of interconnect layers, wherein each interconnect pad of the plurality of interconnect pads couples via respective vias (416,417,308) and metal interconnects (410, 414) to the first end portion of a respective one of the plurality of fuses; forming a plating contact over the seal ring; wherein the plating contact couples via the seal ring to the second end portion of each one of the plurality of fuses, and wherein when each fuse of the plurality of fuses is in a conductive state, the fuse electrically connects the respective one of the plurality of interconnect pads to the plating contact; and electroplating a conductive layer on each one of the plurality of interconnect pads by applying a direct potential to the plating contact; and after the step of electroplating the conductive layer on the plurality of interconnect pads, providing a current through at least a subset of the plurality of interconnect pads to change a state of the fuses electrically connected to the subset of the plurality of interconnect pads to a non-conductive state.