A temperature-compensated oscillator comprising: a first capacitive charging circuit comprising a first field-effect transistor having a source connected to a common connection and a first capacitor connected between the first field-effect transistor gate and the common connection, the first field effect transistor arranged to switch states when the first capacitor is charged above a threshold voltage of the first transistor; a first current source connected between a supply voltage connection and the first field-effect transistor gate; a second capacitive charging circuit comprising a second field-effect transistor, a second capacitor connected between the second field effect transistor gate and the common connection and arranged to begin discharging when the first transistor switches states, the second transistor having a source connected to the supply voltage connection and a gate connected to the first field effect transistor drain and arranged to switch states when the second capacitor is discharged below a voltage equal to a supply voltage at the supply voltage connection minus a threshold voltage of the second transistor; a second current source connected between the supply voltage connection and the second field-effect transistor gate; a third capacitive charging circuit comprising a third field-effect transistor having a source connected to a common connection and a third capacitor connected between the third field effect transistor gate and the common connection and arranged to begin discharging when the second field effect transistor switches states, the third field effect transistor having a drain connected to the first field effect transistor gate, a gate connected to the second field effect transistor drain and arranged to switch states when the third capacitor discharges below a threshold voltage of the third field effect transistor; a third current source connected between the third field effect transistor gate and the common connection; wherein the first and third transistors are n-channel MOSFETs and the second transistor is a p-channel MOSFET. a first capacitive charging circuit comprising a first field-effect transistor having a source connected to a common connection and a first capacitor connected between the first field-effect transistor gate and the common connection, the first field effect transistor arranged to switch states when the first capacitor is charged above a threshold voltage of the first transistor; a first current source connected between a supply voltage connection and the first field-effect transistor gate; a second capacitive charging circuit comprising a second field-effect transistor, a second capacitor connected between the second field effect transistor gate and the common connection and arranged to begin discharging when the first transistor switches states, the second transistor having a source connected to the supply voltage connection and a gate connected to the first field effect transistor drain and arranged to switch states when the second capacitor is discharged below a voltage equal to a supply voltage at the supply voltage connection minus a threshold voltage of the second transistor; a second current source connected between the supply voltage connection and the second field-effect transistor gate; a third capacitive charging circuit comprising a third field-effect transistor having a source connected to a common connection and a third capacitor connected between the third field effect transistor gate and the common connection and arranged to begin discharging when the second field effect transistor switches states, the third field effect transistor having a drain connected to the first field effect transistor gate, a gate connected to the second field effect transistor drain and arranged to switch states when the third capacitor discharges below a threshold voltage of the third field effect transistor; a third current source connected between the third field effect transistor gate and the common connection; wherein the first and third transistors are n-channel MOSFETs and the second transistor is a p-channel MOSFET.