mhurhangee/ep-ind-claims huggingface dataset:
A memory cell of the SRAM type, including at least: - storage TFET and/or CMOS transistors (106, 108, 130, 132, 134, 136) forming a memory point at which a bit is intended to be stored; - a read port comprising at least one read MOS transistor, a read TFET transistor, a power supply terminal and a read bit line whereof an electric potential is intended to vary depending on the value of the bit stored during a reading of the stored bit, and such that: - the gate of the read MOS transistor is linked to the memory point, and the gate of the read TFET transistor is able to receive a read control signal of the stored bit; - a first electrode of the read MOS transistor, corresponding to a source or a drain of the read MOS transistor, is linked to the power supply terminal; - a second electrode of the read MOS transistor, respectively corresponding to the drain or the source of the read MOS transistor, is linked to a first electrode of the read TFET transistor corresponding to a source or a drain of the read TFET transistor; - a second electrode of the read TFET transistor, respectively corresponding to the drain or the source of the read TFET transistor, is linked to the read bit line. - storage TFET and/or CMOS transistors (106, 108, 130, 132, 134, 136) forming a memory point at which a bit is intended to be stored; - a read port comprising at least one read MOS transistor, a read TFET transistor, a power supply terminal and a read bit line whereof an electric potential is intended to vary depending on the value of the bit stored during a reading of the stored bit, and such that: - the gate of the read MOS transistor is linked to the memory point, and the gate of the read TFET transistor is able to receive a read control signal of the stored bit; - a first electrode of the read MOS transistor, corresponding to a source or a drain of the read MOS transistor, is linked to the power supply terminal; - a second electrode of the read MOS transistor, respectively corresponding to the drain or the source of the read MOS transistor, is linked to a first electrode of the read TFET transistor corresponding to a source or a drain of the read TFET transistor; - a second electrode of the read TFET transistor, respectively corresponding to the drain or the source of the read TFET transistor, is linked to the read bit line.
Electrically operated personal care device with a care element, a grip body, having an interior space, an electrical energy store, arranged in the interior space, and an electrical load, which is connected to the energy store via a control device, having a control element (41, 42), for continuously changing the energy flow between the load and the energy store, and the control element (41, 42) can be set from the outside by means of a setting element (70, 72), wherein the maximum voltage drop across the control element (41, 42) is limited in such a way that the functioning of the load as intended is ensured when there is an energy flow with any setting of the control element (41, 42) and wherein the control element (41, 42) and the setting element (70, 72) are rotatably formed, characterized in that the control element (41, 42) and the setting element (70, 72) are arranged in a removable end cap, by means of which the interior space is closed, and the end cap has two electrical contact elements (36, 38), which are separate from each other and electrically connected to the control element (41, 42), and, when the interior space is closed, one of the contact elements is electrically connected to a counter-contact on the grip body and the other of the contact elements is electrically connected to a contact of the energy store.
Method of driving an acousto-optic element comprising an acousto-optic crystal and a piezoelectric transducer for causing the acousto-optic crystal to vibrate mechanically, wherein the piezoelectric transducer is driven by a drive signal with at least one driving frequency, wherein the at least one driving frequency alternately assumes several different values (f 1, f 2) around a centre frequency during a passage of a mechanical oscillation wave through the acousto-optic crystal, so that a grating generated by density fluctuations in the acousto-optic crystal simultaneously has different grating spacings, wherein the at least one driving frequency is periodically changed so quickly that there are always several zones with the same grating spacing in the acousto-optic crystal, wherein the acousto-optic crystal is irradiated with a light beam, characterised in that the light beam which enters the acousto-optic crystal strikes a zone with the same grating spacing at least three times. wherein the piezoelectric transducer is driven by a drive signal with at least one driving frequency, wherein the at least one driving frequency alternately assumes several different values (f 1, f 2) around a centre frequency during a passage of a mechanical oscillation wave through the acousto-optic crystal, so that a grating generated by density fluctuations in the acousto-optic crystal simultaneously has different grating spacings, wherein the at least one driving frequency is periodically changed so quickly that there are always several zones with the same grating spacing in the acousto-optic crystal, wherein the acousto-optic crystal is irradiated with a light beam, characterised in that the light beam which enters the acousto-optic crystal strikes a zone with the same grating spacing at least three times.
A method for dodging an obstacle, applied to a movable object, wherein the method comprises: obtaining acceleration information of the movable object; determining, according to the acceleration information of the movable object, that the movable object collides; determining, according to the acceleration information, a direction for dodging an obstacle; and controlling the movable object to move along the direction for dodging the obstacle, to avoid the obstacle characterized in that the acceleration information comprises an acceleration change rate of three directions, wherein the determining, according to the acceleration information, a direction for dodging an obstacle comprises: determining an acceleration change rate of the movable object according to a vector sum of the acceleration change rate of the three directions; and determining a direction of the acceleration change rate as the direction for dodging the obstacle. obtaining acceleration information of the movable object; determining, according to the acceleration information of the movable object, that the movable object collides; determining, according to the acceleration information, a direction for dodging an obstacle; and controlling the movable object to move along the direction for dodging the obstacle, to avoid the obstacle characterized in that the acceleration information comprises an acceleration change rate of three directions, wherein the determining, according to the acceleration information, a direction for dodging an obstacle comprises: determining an acceleration change rate of the movable object according to a vector sum of the acceleration change rate of the three directions; and determining a direction of the acceleration change rate as the direction for dodging the obstacle. determining an acceleration change rate of the movable object according to a vector sum of the acceleration change rate of the three directions; and determining a direction of the acceleration change rate as the direction for dodging the obstacle.
Method for extracting phosphorus from organic matter, the method comprising: (a) providing phosphorus-containing organic matter, wherein the organic matter further contains calcium and/or iron; (b) combining the organic matter provided in step (a) with acidic sulphate-containing aqueous solution to solubilize phosphorus, to allow calcium sulphate in the form of suspended gypsum particles and/or iron sulphate to form, thereby obtaining a slurry; (c) separating the slurry obtained in step (b) into a solid fraction having a water content of at most 80 wt.%, and a liquid fraction having a water content of at least 80 wt.%; (c') combining the solid fraction obtained in step (c) with acidic aqueous solution to solubilize phosphorus, thereby obtaining a slurry; (c") separating the slurry obtained in step (c') into a solid fraction having a water content of at most 80 wt.%, and a liquid fraction having a water content of at least 80 wt.%; (d) combining the liquid fraction as obtained in step (c) with magnesium-containing base to obtain struvite precipitate, wherein step (d) and/or step (c") obtains sulphate-containing liquid fraction which is reused in step (b) and/or step (c') as the aqueous solution, and wherein step (c) and/or step (c") is performed by means of a solid-liquid separator, preferably a screw press or a centrifuge. (a) providing phosphorus-containing organic matter, wherein the organic matter further contains calcium and/or iron; (b) combining the organic matter provided in step (a) with acidic sulphate-containing aqueous solution to solubilize phosphorus, to allow calcium sulphate in the form of suspended gypsum particles and/or iron sulphate to form, thereby obtaining a slurry; (c) separating the slurry obtained in step (b) into a solid fraction having a water content of at most 80 wt.%, and a liquid fraction having a water content of at least 80 wt.%; (c') combining the solid fraction obtained in step (c) with acidic aqueous solution to solubilize phosphorus, thereby obtaining a slurry; (c") separating the slurry obtained in step (c') into a solid fraction having a water content of at most 80 wt.%, and a liquid fraction having a water content of at least 80 wt.%; (d) combining the liquid fraction as obtained in step (c) with magnesium-containing base to obtain struvite precipitate, wherein step (d) and/or step (c") obtains sulphate-containing liquid fraction which is reused in step (b) and/or step (c') as the aqueous solution, and wherein step (c) and/or step (c") is performed by means of a solid-liquid separator, preferably a screw press or a centrifuge.
A method of conjugating an oligonucleotide to a polymer, the method comprising: treating a polymer comprising amine functionality with a bis-NHS ester to form a functionalized polymer; and treating the functionalized polymer with an amine terminated oligonucleotide to form a conjugated polymer including the oligonucleotide in a polar non-aqueous solvent. treating a polymer comprising amine functionality with a bis-NHS ester to form a functionalized polymer; and treating the functionalized polymer with an amine terminated oligonucleotide to form a conjugated polymer including the oligonucleotide in a polar non-aqueous solvent.
A communication method, wherein the method comprises: receiving, by a terminal device, first information from an access device, wherein the first information indicates a relative amount between a first bandwidth part, BWP, of an access beam of the terminal device and a second BWP of the access beam; and the second BWP is a dedicated BWP configured for the access beam; determining, by the terminal device, the first BWP based on the first information and based on the second BWP; and communicating, by the terminal device, with the access device in the first BWP by using the access beam; characterized in that the relative amount that is indicated by the first information comprises a scaling factor and/or a frequency offset, wherein the scaling factor is a ratio of a bandwidth of the first BWP to a bandwidth of the second BWP; the frequency offset is an offset of a base frequency of the first BWP relative to a reference frequency in frequency domain of the second BWP, the base frequency is any frequency in frequency domain of the first BWP, and the reference frequency is any frequency in the frequency domain of the second BWP. receiving, by a terminal device, first information from an access device, wherein the first information indicates a relative amount between a first bandwidth part, BWP, of an access beam of the terminal device and a second BWP of the access beam; and the second BWP is a dedicated BWP configured for the access beam; determining, by the terminal device, the first BWP based on the first information and based on the second BWP; and communicating, by the terminal device, with the access device in the first BWP by using the access beam; characterized in that the relative amount that is indicated by the first information comprises a scaling factor and/or a frequency offset, wherein the scaling factor is a ratio of a bandwidth of the first BWP to a bandwidth of the second BWP; the frequency offset is an offset of a base frequency of the first BWP relative to a reference frequency in frequency domain of the second BWP, the base frequency is any frequency in frequency domain of the first BWP, and the reference frequency is any frequency in the frequency domain of the second BWP.
A network element for a communications network, the communications network having a control plane and a data plane which are decoupled, the network element comprising a processor configured for implementing data plane and control plane functionality, wherein the network element is configured to be in one of: a first state in which the network element operates as normal and in which a configuration of the data plane changes in response to the data plane receiving a control message from the control plane, and a second state in which the network element is configured to suppress a control message from the control plane for the data plane such that the configuration of the data plane is preserved. a first state in which the network element operates as normal and in which a configuration of the data plane changes in response to the data plane receiving a control message from the control plane, and a second state in which the network element is configured to suppress a control message from the control plane for the data plane such that the configuration of the data plane is preserved.
An integrated circuit module, wherein the integrated circuit module is implemented through a hard macro, comprising: a first plurality of tiles, a second plurality of tiles, wherein the hard macro occupies an overall footprint on a semiconductor die, and wherein the footprint includes the first plurality of tiles and the second plurality of tiles; a first power-grid tier for each tile in the first plurality of tiles; and a second power-grid tier for each tile in the second plurality of tiles, wherein the first power-grid tier has a greater via density than the second power-grid tier for vias extending between metal layers defining power rails and ground rails for the integrated circuit module. a first plurality of tiles, a second plurality of tiles, wherein the hard macro occupies an overall footprint on a semiconductor die, and wherein the footprint includes the first plurality of tiles and the second plurality of tiles; a first power-grid tier for each tile in the first plurality of tiles; and a second power-grid tier for each tile in the second plurality of tiles, wherein the first power-grid tier has a greater via density than the second power-grid tier for vias extending between metal layers defining power rails and ground rails for the integrated circuit module.
A spray chamber for cooling a computer processor on a circuit board, the spray chamber comprising: - a wall assembly for sealable mounting on an exposed cooling surface of the computer processor defining an enclosure having a top opening and a bottom opening which opens on the exposed cooling surface of the computer processor; and - a lid for covering the top opening of the wall assembly in a sealable manner, the lid having a spray nozzle adapted to perform spray cooling which sprays coolant that impinges on the exposed cooling surface of the computer processor, wherein the wall assembly and the lid are distinct and separate parts which together form the spray chamber, characterized in that the spray chamber comprises a board fastening system adapted to fasten to the circuit board and to form a hermetic seal between the spray chamber and the exposed cooling surface of the computer processor, wherein the board fastening system comprises mounting arms that are compatible with a standard heatsink mounting mechanism of the circuit board. - a wall assembly for sealable mounting on an exposed cooling surface of the computer processor defining an enclosure having a top opening and a bottom opening which opens on the exposed cooling surface of the computer processor; and - a lid for covering the top opening of the wall assembly in a sealable manner, the lid having a spray nozzle adapted to perform spray cooling which sprays coolant that impinges on the exposed cooling surface of the computer processor, wherein the wall assembly and the lid are distinct and separate parts which together form the spray chamber, characterized in that the spray chamber comprises a board fastening system adapted to fasten to the circuit board and to form a hermetic seal between the spray chamber and the exposed cooling surface of the computer processor, wherein the board fastening system comprises mounting arms that are compatible with a standard heatsink mounting mechanism of the circuit board.
Method of operating at least two lifting devices, and in particular at least two cranes (1 a, 1 b), in a grouped mode and in a normal mode, each lifting device having an electric lifting unit motor (6a, 6b) which has an associated control system (3a, 3b) connected to a control switch (9a, 9b), the at least two lifting devices having their functions controlled via a common bus and, in the grouped mode, the at least two lifting devices having their functions controlled together via the bus by one of the control switches (9a, 9b), characterised in that, in the grouped mode, one of the control switches (9a, 9b) is in an active state and the remaining control switch or control switches (9a, 9b) is in a passive state, in that, to prepare for the grouped mode, the normal mode is de-selected by all except one of the control switches (9a, 9b) which are in the normal mode, the grouped mode is then logged onto by the remaining control switch (9a, 9b) and this remaining control switch (9a, 9b) is then in the active state in the grouped mode, and in that, to prepare for the normal mode, the grouped mode is de-selected by the control switch (9a, 9b) which is in the active state in the grouped mode and then the other control switch (9a, 9b) or the other control switches (9a, 9b) are logged onto the normal mode in the passive grouped mode.
Method for producing a half-shell for a high-pressure vessel, in which the half-shell comprises an insert and in which a mould is used having a first mould part which forms a female mould, comprising the following steps: - a pre-heated first plastics sheet is laid on the first mould part, - the first plastics sheet is sucked by means of a partial vacuum or pressed by a pressure onto the first mould part, - the plastic of the first plastics sheet is thereby disposed in areas behind a back-taper of the insert at a lateral distance from the insert, or the insert after sucking or pressing of the first plastics sheet onto the first mould part is so positioned that plastic of the first plastics sheet is disposed in areas behind a back-taper of the insert at a lateral distance from the insert. - then by means of a slide or a partial vacuum or a pressure, the plastic of the first plastics sheet behind the back-taper and laterally distanced from the insert is pressed or sucked onto the insert, so that a space behind the back-taper of the insert is filled with the plastic, characterized in that after sucking or pressing the first plastics sheet onto the first mould part, the insert is raised in relation to the first mould part, in order to position the insert so that plastic of the first plastics sheet is disposed behind the back-taper at a lateral distance from the insert, wherein after filling the back-taper of the insert with the plastic the insert is lowered again in relation to the first mould part. - a pre-heated first plastics sheet is laid on the first mould part, - the first plastics sheet is sucked by means of a partial vacuum or pressed by a pressure onto the first mould part, - the plastic of the first plastics sheet is thereby disposed in areas behind a back-taper of the insert at a lateral distance from the insert, or the insert after sucking or pressing of the first plastics sheet onto the first mould part is so positioned that plastic of the first plastics sheet is disposed in areas behind a back-taper of the insert at a lateral distance from the insert. - then by means of a slide or a partial vacuum or a pressure, the plastic of the first plastics sheet behind the back-taper and laterally distanced from the insert is pressed or sucked onto the insert, so that a space behind the back-taper of the insert is filled with the plastic, characterized in that after sucking or pressing the first plastics sheet onto the first mould part, the insert is raised in relation to the first mould part, in order to position the insert so that plastic of the first plastics sheet is disposed behind the back-taper at a lateral distance from the insert, wherein after filling the back-taper of the insert with the plastic the insert is lowered again in relation to the first mould part.
A magnetically driven trip mechanism for an overload relay, comprising: a tripping actuator having a first permanent magnet; a moveable contact carrier having a second permanent magnet mounted in an opposed orientation to the first permanent magnet; a moveable electrical contact on or actuated by the moveable contact carrier, the moveable electrical contact configured to be urged, by repulsion between the first and second permanent magnets, to make a normally closed electrical connection with a stationary electrical contact, when the tripping actuator is in an ON position and the moveable contact carrier in a first stable position; the first permanent magnet passing the second permanent magnet in a first direction through an over-center tripping position when the tripping actuator is moved to an OFF position in response to an overcurrent condition being sensed by an overcurrent sensing mechanism; and the first and second permanent magnets being configured to repel each other after the first permanent magnet passes through the over-center tripping position, to thereby urge the moveable contact carrier and its moveable contact toward a second stabile position the moveable contact thereby moving in a second direction opposite to the first direction, to break the normally closed electrical connection with the stationary electrical contact. a tripping actuator having a first permanent magnet; a moveable contact carrier having a second permanent magnet mounted in an opposed orientation to the first permanent magnet; a moveable electrical contact on or actuated by the moveable contact carrier, the moveable electrical contact configured to be urged, by repulsion between the first and second permanent magnets, to make a normally closed electrical connection with a stationary electrical contact, when the tripping actuator is in an ON position and the moveable contact carrier in a first stable position; the first permanent magnet passing the second permanent magnet in a first direction through an over-center tripping position when the tripping actuator is moved to an OFF position in response to an overcurrent condition being sensed by an overcurrent sensing mechanism; and the first and second permanent magnets being configured to repel each other after the first permanent magnet passes through the over-center tripping position, to thereby urge the moveable contact carrier and its moveable contact toward a second stabile position the moveable contact thereby moving in a second direction opposite to the first direction, to break the normally closed electrical connection with the stationary electrical contact.