A sensing device including a load sensor package, the load sensor package comprising: a housing comprising a cap, a column, a peripheral structure, and a base, the cap and the column being formed as a single monolithic unit with the column positioned in a central region of the cap, wherein the base comprises a major surface configured to mount a stress sensor, the cap comprises a cap major surface configured to receive a load to be measured, the column is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor, and the peripheral structure is configured to transfer the remaining fraction of the load to be measured to the base, wherein the stress sensor comprises: a first semiconductor layer comprising a first major surface configured to receive the predetermined fraction of the load to be measured; a second semiconductor layer disposed under the first semiconductor layer, the second semiconductor layer comprising a vertical-stress independent resistor and a vertical-stress sensing resistor, the vertical-stress independent resistor oriented in a first direction and comprising a first type of doping, the vertical-stress sensing resistor oriented in the first direction and comprising the first type of doping, the first semiconductor layer comprising a second major surface configured to be attached to the second semiconductor layer; and an adhesive bonding layer disposed between the first semiconductor layer and the second semiconductor layer, the adhesive bonding layer comprising a first opening, wherein the first opening is disposed directly over and overlaps the vertical-stress independent resistor, wherein the vertical-stress sensing resistor contacts the adhesive bonding layer, and wherein a first die bonding layer is disposed between the stress sensor and the base and a second die bonding layer is disposed between the column of the housing and the stress sensor. a housing comprising a cap, a column, a peripheral structure, and a base, the cap and the column being formed as a single monolithic unit with the column positioned in a central region of the cap, wherein the base comprises a major surface configured to mount a stress sensor, the cap comprises a cap major surface configured to receive a load to be measured, the column is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor, and the peripheral structure is configured to transfer the remaining fraction of the load to be measured to the base, wherein the stress sensor comprises: a first semiconductor layer comprising a first major surface configured to receive the predetermined fraction of the load to be measured; a second semiconductor layer disposed under the first semiconductor layer, the second semiconductor layer comprising a vertical-stress independent resistor and a vertical-stress sensing resistor, the vertical-stress independent resistor oriented in a first direction and comprising a first type of doping, the vertical-stress sensing resistor oriented in the first direction and comprising the first type of doping, the first semiconductor layer comprising a second major surface configured to be attached to the second semiconductor layer; and an adhesive bonding layer disposed between the first semiconductor layer and the second semiconductor layer, the adhesive bonding layer comprising a first opening, wherein the first opening is disposed directly over and overlaps the vertical-stress independent resistor, wherein the vertical-stress sensing resistor contacts the adhesive bonding layer, and wherein a first die bonding layer is disposed between the stress sensor and the base and a second die bonding layer is disposed between the column of the housing and the stress sensor. a first semiconductor layer comprising a first major surface configured to receive the predetermined fraction of the load to be measured; a second semiconductor layer disposed under the first semiconductor layer, the second semiconductor layer comprising a vertical-stress independent resistor and a vertical-stress sensing resistor, the vertical-stress independent resistor oriented in a first direction and comprising a first type of doping, the vertical-stress sensing resistor oriented in the first direction and comprising the first type of doping, the first semiconductor layer comprising a second major surface configured to be attached to the second semiconductor layer; and an adhesive bonding layer disposed between the first semiconductor layer and the second semiconductor layer, the adhesive bonding layer comprising a first opening, wherein the first opening is disposed directly over and overlaps the vertical-stress independent resistor, wherein the vertical-stress sensing resistor contacts the adhesive bonding layer, and wherein a first die bonding layer is disposed between the stress sensor and the base and a second die bonding layer is disposed between the column of the housing and the stress sensor.