A method for manufacturing a stacked semiconductor package (104, 204, 304), the method comprising: providing an integrated circuit ("IC") package substrate (230, 330, 430) comprising an array of conductive contacts formed on a bottom surface of the IC package substrates; physically coupling a stack of memory dies (212a-212h, 312a-312h) to a top surface (238, 338) of the IC package substrate in an arrow-shaped stack pointing in a direction perpendicular to the normal of the top surface of the IC package substrate; electrically coupling bond pads provided on exposed surfaces of the memory dies in a first half of the arrow-shaped stack to contacts of the IC package substrate associated with a first communications channel (channel 0); and electrically coupling bond pads provided on exposed surfaces of the memory dies in a second half of the arrow-shaped stack to contacts of the IC package substrate associated with a second communications channel (channel 1) forming a plurality of electrically conductive vias through the IC package substrate that extend from the top surface of the IC package substrate to a bottom surface of the IC package substrate, a first subset of the conductive contacts is formed on a first side of the bottom surface of the IC package substrate, a portion of the first subset being dedicated to the first communications channel, and wherein a second subset of the conductive contacts is formed on a second side of the bottom surface of the IC package substrate, a portion of the second subset being dedicated to the second communications channel; wherein the portion of the first subset forms a first loop-shaped layout arranged on a first side of the bottom surface surrounding a single first ground ("GND") contact and includes all data I/O contacts, all data queue stroke ("DQS") contacts, and all read enable ("RE") contacts dedicated to the first communications channel; wherein the portion of the second subset forms a second loop-shaped layout arranged on a second side of the bottom surface surrounding a single second GND contact and includes all data I/O contacts, all DQS contacts, and all RE contacts dedicated to the second communications channel; and the first side and the second side are opposite a central axis, and the first loop-shaped layout around the single first GND contact and the second loop-shaped layout around the single second GND contact are reflected about a central point of rotational symmetry on the central axis and rotated 180° from one another. providing an integrated circuit ("IC") package substrate (230, 330, 430) comprising an array of conductive contacts formed on a bottom surface of the IC package substrates; physically coupling a stack of memory dies (212a-212h, 312a-312h) to a top surface (238, 338) of the IC package substrate in an arrow-shaped stack pointing in a direction perpendicular to the normal of the top surface of the IC package substrate; electrically coupling bond pads provided on exposed surfaces of the memory dies in a first half of the arrow-shaped stack to contacts of the IC package substrate associated with a first communications channel (channel 0); and electrically coupling bond pads provided on exposed surfaces of the memory dies in a second half of the arrow-shaped stack to contacts of the IC package substrate associated with a second communications channel (channel 1) forming a plurality of electrically conductive vias through the IC package substrate that extend from the top surface of the IC package substrate to a bottom surface of the IC package substrate, a first subset of the conductive contacts is formed on a first side of the bottom surface of the IC package substrate, a portion of the first subset being dedicated to the first communications channel, and wherein a second subset of the conductive contacts is formed on a second side of the bottom surface of the IC package substrate, a portion of the second subset being dedicated to the second communications channel; wherein the portion of the first subset forms a first loop-shaped layout arranged on a first side of the bottom surface surrounding a single first ground ("GND") contact and includes all data I/O contacts, all data queue stroke ("DQS") contacts, and all read enable ("RE") contacts dedicated to the first communications channel; wherein the portion of the second subset forms a second loop-shaped layout arranged on a second side of the bottom surface surrounding a single second GND contact and includes all data I/O contacts, all DQS contacts, and all RE contacts dedicated to the second communications channel; and the first side and the second side are opposite a central axis, and the first loop-shaped layout around the single first GND contact and the second loop-shaped layout around the single second GND contact are reflected about a central point of rotational symmetry on the central axis and rotated 180° from one another.