A light emitting diode, LED, structure, comprising: a substrate; a bonding layer formed on the substrate; a first doping type semiconductor layer formed on the bonding layer; a multiple quantum well, MQW, layer formed on the first doping type semiconductor layer; and a second doping type semiconductor layer formed on the MQW layer, wherein the second doping type semiconductor layer comprises an isolation material made through implantation; a passivation layer formed on the second doping type semiconductor layer; and an electrode layer formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer, wherein the isolation material divides the second doping type semiconductor layer into a plurality of LED mesas (108-1, 108-2, 108-3, 108-4), and the plurality of LED mesas (108-1, 108-2, 108-3, 108-4) correspond to a plurality of LED units (118-1, 118-2, 118-3, 118-4), respectively, and the LED structure further comprises: a plurality of contacts of a driving circuit formed in the substrate, wherein each contact is located at an interspace of adjacent LED mesas (108-1, 108-2, 108-3, 108-4), the electrode layer electrically connects the second doping type semiconductor layer and the contact through the first opening and a second opening on each contact, and each LED unit (118-1, 118-2, 118-3, 118-4) is individually driven by a corresponding contact of the driving circuit, and the plurality of LED mesas (108-1, 108-2, 108-3, 108-4) comprise a first LED mesa and a second LED mesa adjacent to the first LED mesa, wherein the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the first LED mesa horizontally extend to the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the second LED mesa. a substrate; a bonding layer formed on the substrate; a first doping type semiconductor layer formed on the bonding layer; a multiple quantum well, MQW, layer formed on the first doping type semiconductor layer; and a second doping type semiconductor layer formed on the MQW layer, wherein the second doping type semiconductor layer comprises an isolation material made through implantation; a passivation layer formed on the second doping type semiconductor layer; and an electrode layer formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer, wherein the isolation material divides the second doping type semiconductor layer into a plurality of LED mesas (108-1, 108-2, 108-3, 108-4), and the plurality of LED mesas (108-1, 108-2, 108-3, 108-4) correspond to a plurality of LED units (118-1, 118-2, 118-3, 118-4), respectively, and the LED structure further comprises: a plurality of contacts of a driving circuit formed in the substrate, wherein each contact is located at an interspace of adjacent LED mesas (108-1, 108-2, 108-3, 108-4), the electrode layer electrically connects the second doping type semiconductor layer and the contact through the first opening and a second opening on each contact, and each LED unit (118-1, 118-2, 118-3, 118-4) is individually driven by a corresponding contact of the driving circuit, and the plurality of LED mesas (108-1, 108-2, 108-3, 108-4) comprise a first LED mesa and a second LED mesa adjacent to the first LED mesa, wherein the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the first LED mesa horizontally extend to the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the second LED mesa. a plurality of contacts of a driving circuit formed in the substrate, wherein each contact is located at an interspace of adjacent LED mesas (108-1, 108-2, 108-3, 108-4), the electrode layer electrically connects the second doping type semiconductor layer and the contact through the first opening and a second opening on each contact, and each LED unit (118-1, 118-2, 118-3, 118-4) is individually driven by a corresponding contact of the driving circuit, and the plurality of LED mesas (108-1, 108-2, 108-3, 108-4) comprise a first LED mesa and a second LED mesa adjacent to the first LED mesa, wherein the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the first LED mesa horizontally extend to the MQW layer, the first doping type semiconductor layer and the bonding layer beneath the second LED mesa.