A single-package magnetoresistive rotation sensor, comprising: two pairs of MTJ or GMR magnetoresistive sensor chips (120, 121, 122, 123), wherein one of the MTJ or GMR magnetoresistive sensor chips in each pair is rotated 180 degrees with respect to the other one of the chips in the pair, and the MTJ or GMR magnetoresistive sensor chips are adhered to a semiconductor package lead frame to form single-axis push-pull full-bridge rotation sensors, wherein each pair of MTJ or GMR magnetoresistive sensor chips comprises a single axis of the push-pull full-bridge rotation sensor, and one of the pairs of MTJ or GMR magnetoresistive sensor chips is rotated 90 degrees with respect to the other pair, such that the rotation sensor has two orthogonal sensor axes and can thus detect two orthogonal magnetic field components; each of the MTJ or GMR magnetoresistive sensor chips (120, 121, 122, 123) is configured as a pair of magnetoresistive elements, where each of the magnetoresistive elements in the pair comprises a string of one or more MTJ or GMR magnetoresistive sensor elements; the MTJ or GMR magnetoresistive sensor elements are configured as a spin-valve comprised of a free layer and a pinned layer, where the direction of the magnetization of the free layer is free to rotate relative to the pinned layer magnetization direction of the MTJ or GMR magnetoresistive sensor element; bond pads of each MTJ or GMR magnetoresistive sensor chip (120, 121, 122, 123) are arranged to allow more than one wire bond to be attached to each side of each string of MTJ or GMR magnetoresistive sensor elements; each MTJ or GMR magnetoresistive sensor chip (120, 121, 122, 123) has a crossover conductor structure interconnecting the magnetoresistive elements; the input and output connections of the MTJ or GMR magnetoresistive sensor chips are wire bonded to the semiconductor package lead frame, and wherein the full bridge sensors for respective axes have a common geometric center (126, 136). two pairs of MTJ or GMR magnetoresistive sensor chips (120, 121, 122, 123), wherein one of the MTJ or GMR magnetoresistive sensor chips in each pair is rotated 180 degrees with respect to the other one of the chips in the pair, and the MTJ or GMR magnetoresistive sensor chips are adhered to a semiconductor package lead frame to form single-axis push-pull full-bridge rotation sensors, wherein each pair of MTJ or GMR magnetoresistive sensor chips comprises a single axis of the push-pull full-bridge rotation sensor, and one of the pairs of MTJ or GMR magnetoresistive sensor chips is rotated 90 degrees with respect to the other pair, such that the rotation sensor has two orthogonal sensor axes and can thus detect two orthogonal magnetic field components; each of the MTJ or GMR magnetoresistive sensor chips (120, 121, 122, 123) is configured as a pair of magnetoresistive elements, where each of the magnetoresistive elements in the pair comprises a string of one or more MTJ or GMR magnetoresistive sensor elements; the MTJ or GMR magnetoresistive sensor elements are configured as a spin-valve comprised of a free layer and a pinned layer, where the direction of the magnetization of the free layer is free to rotate relative to the pinned layer magnetization direction of the MTJ or GMR magnetoresistive sensor element; bond pads of each MTJ or GMR magnetoresistive sensor chip (120, 121, 122, 123) are arranged to allow more than one wire bond to be attached to each side of each string of MTJ or GMR magnetoresistive sensor elements; each MTJ or GMR magnetoresistive sensor chip (120, 121, 122, 123) has a crossover conductor structure interconnecting the magnetoresistive elements; the input and output connections of the MTJ or GMR magnetoresistive sensor chips are wire bonded to the semiconductor package lead frame, and wherein the full bridge sensors for respective axes have a common geometric center (126, 136).