Organic light-emitting device incorporating a substrate having an optical index n0, bearing a lower electrode, an organic light-emitting system on top of the lower electrode and that emits a polychromatic radiation defined at 0° by coordinates (x1, y1) in the CIE XYZ 1931 chromaticity diagram, and an upper electrode on top of the organic light-emitting system, the lower electrode comprising a stack successively composed of: - an anti-reflection sublayer having a given optical thickness L1 and having an optical index n1 such that the ratio of n1 to n0 is greater than or equal to 6/5, the anti-reflection sublayer comprising a layer, known as a first contact layer, based on a metal oxide, subjacent to the first metallic layer, the first contact layer being based on optionally substoichiometric and/or optionally doped zinc oxide, - a first metallic layer having a given thickness e1, positioned on the anti-reflection sublayer; - a first separating layer, having a given optical thickness L2, positioned on the first metallic layer, the first separating layer comprises a layer, known as a second contact layer, based on a metal oxide, subjacent to the second metallic layer, the second contact layer being based on optionally substoichiometric and/or optionally doped zinc oxide, - a second metallic layer, having an intrinsic electrical conductivity property, and having a given thickness e2, this second layer being positioned between the first separating layer and the overlayer; - an overlayer for adapting the work function, having a given thickness e3, positioned on the second metallic layer, the overlayer having a work function greater than 4.5 eV, the overlayer being the upper layer of the stack, the sum of the thicknesses e1+e2 of the first and second metallic layers being less than or equal to 40 nm; L1 being between 20 nm and 120 nm, L2 being between 75 nm and 200 nm, microcavities are formed that resonate, respectively between the first thin metallic layer and the upper electrode, and between the second thin metallic layer and the upper electrode, at two different wavelengths in the visible region that are sufficiently spaced apart, in particular by at least 100 nm, and the values of L1 and L2 are adjusted so as to broaden the two resonance peaks and form a single broadband spectrum in the visible region. - an anti-reflection sublayer having a given optical thickness L1 and having an optical index n1 such that the ratio of n1 to n0 is greater than or equal to 6/5, the anti-reflection sublayer comprising a layer, known as a first contact layer, based on a metal oxide, subjacent to the first metallic layer, the first contact layer being based on optionally substoichiometric and/or optionally doped zinc oxide, - a first metallic layer having a given thickness e1, positioned on the anti-reflection sublayer; - a first separating layer, having a given optical thickness L2, positioned on the first metallic layer, the first separating layer comprises a layer, known as a second contact layer, based on a metal oxide, subjacent to the second metallic layer, the second contact layer being based on optionally substoichiometric and/or optionally doped zinc oxide, - a second metallic layer, having an intrinsic electrical conductivity property, and having a given thickness e2, this second layer being positioned between the first separating layer and the overlayer; - an overlayer for adapting the work function, having a given thickness e3, positioned on the second metallic layer, the overlayer having a work function greater than 4.5 eV, the overlayer being the upper layer of the stack,