A pixel device (200, 300, 400, 500, 600, 700) operable to demodulate incident modulated light, the pixel device comprising: a pinned photodiode structure (201, 301, 401, 501, 601, 701) including a substrate (203, 303, 403, 503, 603, 703) of a first conductivity type, an implant layer of a second conductivity type (205, 305, 405, 505, 605), an implant layer of the first conductivity type (207, 307, 407, 507, 607, 707) disposed within the implant layer of the second conductivity type an insulator (213, 313, 413, 513, 613, 713) disposed on a surface of the substrate and a photo-detection region (219, 319, 419, 519, 619, 719) comprising the pinned photodiode structure, wherein the photo-detection region is configured such that modulated light and background light incident on the photo-detection region generate charge-carriers which have modulation characteristics of the incident modulated light; a plurality of first transfer gates (215, 315, 415, 515, 615, 715) and a plurality of second transfer gates (217, 317, 417, 517, 617, 717) disposed on a surface of the insulator wherein the plurality of first transfer gates and the plurality of second transfer gates are configured to generate a field within the substrate of the first conductivity type; and a plurality of first floating diffusion implant layers of the second conductivity type (209, 309, 409, 509, 609, 709) and a plurality of second floating diffusion implant layers of the second conductivity type (211, 311, 411, 511, 611, 711) disposed within the substrate of the first conductivity type; wherein the plurality of first transfer gates the plurality of second transfer gates. the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are circumferentially disposed around the photo-detection region such that the charge-carrier transport paths to the floating diffusion implant layers are minimized; and wherein each first transfer gate within the plurality of first transfer gates is disposed at opposing sides of the photo-detection region, and each second transfer gate within the plurality of second transfer gates is disposed at opposing sides of the photo-detection region, characterized in that the plurality of first transfer gates and the plurality of second transfer gates are configured to conduct the charge-carriers to the plurality of first floating diffusion implant layers at a first instance in time, and the plurality of first transfer gates and the plurality of second transfer gates are configured to conduct the charge-carriers to the plurality of second floating diffusion implant layers at a second instance in time, wherein the first instance in time and the second instance in time are alternated, a pinned photodiode structure (201, 301, 401, 501, 601, 701) including a substrate (203, 303, 403, 503, 603, 703) of a first conductivity type, an implant layer of a second conductivity type (205, 305, 405, 505, 605), an implant layer of the first conductivity type (207, 307, 407, 507, 607, 707) disposed within the implant layer of the second conductivity type an insulator (213, 313, 413, 513, 613, 713) disposed on a surface of the substrate and a photo-detection region (219, 319, 419, 519, 619, 719) comprising the pinned photodiode structure, wherein the photo-detection region is configured such that modulated light and background light incident on the photo-detection region generate charge-carriers which have modulation characteristics of the incident modulated light; a plurality of first transfer gates (215, 315, 415, 515, 615, 715) and a plurality of second transfer gates (217, 317, 417, 517, 617, 717) disposed on a surface of the insulator wherein the plurality of first transfer gates and the plurality of second transfer gates are configured to generate a field within the substrate of the first conductivity type; and a plurality of first floating diffusion implant layers of the second conductivity type (209, 309, 409, 509, 609, 709) and a plurality of second floating diffusion implant layers of the second conductivity type (211, 311, 411, 511, 611, 711) disposed within the substrate of the first conductivity type; wherein the plurality of first transfer gates the plurality of second transfer gates. the plurality of first floating diffusion implant layers, and the plurality of second floating diffusion implant layers are circumferentially disposed around the photo-detection region such that the charge-carrier transport paths to the floating diffusion implant layers are minimized; and wherein each first transfer gate within the plurality of first transfer gates is disposed at opposing sides of the photo-detection region, and each second transfer gate within the plurality of second transfer gates is disposed at opposing sides of the photo-detection region,