A semiconductor pressure sensor in a substrate, the semiconductor pressure sensor comprising a membrane, delineated by an edge, and a group of neighboring piezo resistors, the group comprising: - a first pair of piezo resistors, comprising a first piezo resistor (R Tmemb) and a second piezo resistor (R Lmemb) near the edge of the membrane, and positioned such that center points of the first pair of piezo resistors are located on the membrane, - a second pair of piezo resistors, comprising a third piezo resistor (R Tref) and a fourth piezo resistor (R Lref) at a position where applied pressure causes reduced surface stress compared to surface stress at the position of the first and the second piezo resistor - wherein the first and the third piezo resistor (R Tmemb and R Tref) are substantially orthogonal to the second and the fourth piezo resistor (R Lmemb and R Lref), - wherein the piezo resistors of the semiconductor pressure sensor form the group of neighboring piezo resistors, wherein the neighboring piezo resistors are present in a section between two lines going through the center of the membrane and having an angle of 90° between them, - characterized in that the semiconductor pressure sensor is configured such that a signal from the first piezo resistor (R Tmemb) and a signal from the second piezo resistor (R Lmemb), corrected with a signal from the third piezo resistor (R Tref) and a signal from the fourth piezo resistor (R Lref), are used as a measure of a pressure on the membrane, wherein the piezo resistors form a Wheatstone bridge wherein: - a first supply node is formed by a connection between the first piezo resistor (R Tmemb) and the second piezo resistor (R Lmemb), - a second supply node is formed by a connection between the third piezo resistor (R Tref) and the fourth piezo resistor (R Lref), - a first output node is formed by a connection between the first piezo resistor (R Tmemb) and the third piezo resistor (R Tref), - a second output node is formed by a connection between the second piezo resistor (R Lmemb) and the fourth piezo resistor (R Lref), and wherein the semiconductor pressure sensor is configured for obtaining said measure of the pressure on the membrane by measuring the voltage difference between the first output node and the second output node. - a first pair of piezo resistors, comprising a first piezo resistor (R Tmemb) and a second piezo resistor (R Lmemb) near the edge of the membrane, and positioned such that center points of the first pair of piezo resistors are located on the membrane, - a second pair of piezo resistors, comprising a third piezo resistor (R Tref) and a fourth piezo resistor (R Lref) at a position where applied pressure causes reduced surface stress compared to surface stress at the position of the first and the second piezo resistor - wherein the first and the third piezo resistor (R Tmemb and R Tref) are substantially orthogonal to the second and the fourth piezo resistor (R Lmemb and R Lref), - wherein the piezo resistors of the semiconductor pressure sensor form the group of neighboring piezo resistors, wherein the neighboring piezo resistors are present in a section between two lines going through the center of the membrane and having an angle of 90° between them, - characterized in that the semiconductor pressure sensor is configured such that a signal from the first piezo resistor (R Tmemb) and a signal from the second piezo resistor (R Lmemb), corrected with a signal from the third piezo resistor (R Tref) and a signal from the fourth piezo resistor (R Lref), are used as a measure of a pressure on the membrane, wherein the piezo resistors form a Wheatstone bridge wherein: - a first supply node is formed by a connection between the first piezo resistor (R Tmemb) and the second piezo resistor (R Lmemb), - a second supply node is formed by a connection between the third piezo resistor (R Tref) and the fourth piezo resistor (R Lref), - a first output node is formed by a connection between the first piezo resistor (R Tmemb) and the third piezo resistor (R Tref), - a second output node is formed by a connection between the second piezo resistor (R Lmemb) and the fourth piezo resistor (R Lref), and wherein the semiconductor pressure sensor is configured for obtaining said measure of the pressure on the membrane by measuring the voltage difference between the first output node and the second output node.