A method for manufacturing a CMOS image sensor encapsulation structure, comprising: forming a blind hole in a combined layer formed by a first insulating layer and a wafer, wherein the blind hole passes through the first insulating layer with its hole bottom located on the wafer, a surface of the first insulating layer is provided with a micro convex lens, with the surface facing away from the wafer; areas where the micro convex lens and the blind hole are located are a first installation area and a second installation area, respectively, the first installation area and the second installation area do not overlap each other; forming a second insulating layer on a hole wall of the blind hole, filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer extend to the surface of the first insulating layer to be electrically connected to the electrically conductive material, with the conductor in signal connection with the micro convex lens and an IC; fixing a transparent substrate material on the surface of the first insulating layer, with the surface having the micro convex lens, and providing the transparent substrate material in the first installation area; forming a dummy wafer on a surface of the transparent substrate material, and thinning the wafer by grinding such that the electrically conductive material in the blind hole is exposed; and forming a third insulating layer on a surface of the wafer that is thinned by grinding and exposing the electrically conductive material, forming metal projections on the third insulating layer and electrically connecting the metal projections to the electrically conductive material, fixing solder balls on the metal projections, and after removing the dummy wafer, forming a protection glue layer on the first insulating layer, wherein the protection glue layer is located in the second installation area. forming a blind hole in a combined layer formed by a first insulating layer and a wafer, wherein the blind hole passes through the first insulating layer with its hole bottom located on the wafer, a surface of the first insulating layer is provided with a micro convex lens, with the surface facing away from the wafer; areas where the micro convex lens and the blind hole are located are a first installation area and a second installation area, respectively, the first installation area and the second installation area do not overlap each other; forming a second insulating layer on a hole wall of the blind hole, filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer extend to the surface of the first insulating layer to be electrically connected to the electrically conductive material, with the conductor in signal connection with the micro convex lens and an IC; fixing a transparent substrate material on the surface of the first insulating layer, with the surface having the micro convex lens, and providing the transparent substrate material in the first installation area; forming a dummy wafer on a surface of the transparent substrate material, and thinning the wafer by grinding such that the electrically conductive material in the blind hole is exposed; and forming a third insulating layer on a surface of the wafer that is thinned by grinding and exposing the electrically conductive material, forming metal projections on the third insulating layer and electrically connecting the metal projections to the electrically conductive material, fixing solder balls on the metal projections, and after removing the dummy wafer, forming a protection glue layer on the first insulating layer, wherein the protection glue layer is located in the second installation area.