An antenna assembly comprising: a dielectric substrate; a first patch (1110, 1110a, 1110c) having a first slot (S1, S1b, S1c) formed at an inner region of a first conductive pattern disposed on the dielectric substrate and configured to radiate a signal in a first frequency band through the first conductive pattern; a second patch (1120, 1120b, 1120c) having a second slot formed at an inner region of a second conductive pattern disposed at an inner region of the first slot (S1, S1b, S1c) and configured to radiate a signal in a second frequency band through the second conductive pattern; a first feeding line disposed at a first region of the first slot (S1, S1b, S1c) between an inside of the first patch (1110, 1110a, 1110c) and an outside of the second patch (1120, 1120b, 1120c); a second feeding line disposed at a second region of the first slot (S1, S1b, S1c) between the inside of the first patch (1110, 1110a, 1110c) and the outside of the second patch (1120, 1120b, 1120c), the second region corresponding to a position where the second feeding line is orthogonal to the first feeding line; and a connection line configured to connect the first path and the second patch (1120, 1120b, 1120c) between the first feeding line and the second feeding line; characterized in that the first slot (S1, S1b, S1c) between an inside of the first patch (1110, 1110a, 1110c) and an outside of the second patch (1120, 1120b, 1120c) is configured to radiate a signal in a third frequency band, and wherein the second frequency band is a band higher than the first frequency band and the third frequency band is a band higher than the second frequency band. a dielectric substrate; a first patch (1110, 1110a, 1110c) having a first slot (S1, S1b, S1c) formed at an inner region of a first conductive pattern disposed on the dielectric substrate and configured to radiate a signal in a first frequency band through the first conductive pattern; a second patch (1120, 1120b, 1120c) having a second slot formed at an inner region of a second conductive pattern disposed at an inner region of the first slot (S1, S1b, S1c) and configured to radiate a signal in a second frequency band through the second conductive pattern; a first feeding line disposed at a first region of the first slot (S1, S1b, S1c) between an inside of the first patch (1110, 1110a, 1110c) and an outside of the second patch (1120, 1120b, 1120c); a second feeding line disposed at a second region of the first slot (S1, S1b, S1c) between the inside of the first patch (1110, 1110a, 1110c) and the outside of the second patch (1120, 1120b, 1120c), the second region corresponding to a position where the second feeding line is orthogonal to the first feeding line; and a connection line configured to connect the first path and the second patch (1120, 1120b, 1120c) between the first feeding line and the second feeding line; characterized in that the first slot (S1, S1b, S1c) between an inside of the first patch (1110, 1110a, 1110c) and an outside of the second patch (1120, 1120b, 1120c) is configured to radiate a signal in a third frequency band, and wherein the second frequency band is a band higher than the first frequency band and the third frequency band is a band higher than the second frequency band.