A method of fabricating a Josephson junction for a superconducting quantum processor, the method comprising: depositing an inner superconductive layer, the inner superconductive layer comprising a material that is superconductive in a range of critical temperatures; forming an oxide layer that overlies at least part of the inner superconductive layer; depositing an outer superconductive layer to overlie at least part of the oxide layer, the outer superconductive layer comprising a material that is superconductive in a range of critical temperatures; removing a portion of the outer superconductive layer to form at least one structure from the outer superconductive layer; depositing a first insulating layer to overlie a part of the outer superconductive layer; removing a portion of the first insulating layer to define a first hole through the first insulating layer; depositing a first superconducting wiring layer to overlie a portion of the first insulating layer and within a portion of the first hole, wherein the first superconducting wiring layer comprises a material that is superconductive in a range of critical temperatures; removing a portion of the first superconducting wiring layer; depositing a second insulating layer to overlie a part of the first superconducting wiring layer; depositing a top superconducting wiring layer to overlie a portion of the second insulating layer; removing a portion of the top superconducting wiring layer to form at least a portion of a coupler of the superconducting quantum processor in the top superconducting wiring layer, the coupler providing communicative coupling between qubits of the superconducting quantum processor; depositing a passivating layer to overlie a part of the top superconducting wiring layer; and wherein depositing the second insulating layer to overlie the part of the first superconducting wiring layer includes providing a hybrid dielectric system comprising a first dielectric and a second dielectric, the first dielectric being a higher-quality dielectric relative to the second dielectric and wherein the depositing of the second insulating layer comprises: depositing the first dielectric to overlie the part of the first superconducting wiring layer; and depositing the second dielectric to overlie at least part of the first dielectric. depositing an inner superconductive layer, the inner superconductive layer comprising a material that is superconductive in a range of critical temperatures; forming an oxide layer that overlies at least part of the inner superconductive layer; depositing an outer superconductive layer to overlie at least part of the oxide layer, the outer superconductive layer comprising a material that is superconductive in a range of critical temperatures; removing a portion of the outer superconductive layer to form at least one structure from the outer superconductive layer; depositing a first insulating layer to overlie a part of the outer superconductive layer; removing a portion of the first insulating layer to define a first hole through the first insulating layer; depositing a first superconducting wiring layer to overlie a portion of the first insulating layer and within a portion of the first hole, wherein the first superconducting wiring layer comprises a material that is superconductive in a range of critical temperatures; removing a portion of the first superconducting wiring layer; depositing a second insulating layer to overlie a part of the first superconducting wiring layer; depositing a top superconducting wiring layer to overlie a portion of the second insulating layer; removing a portion of the top superconducting wiring layer to form at least a portion of a coupler of the superconducting quantum processor in the top superconducting wiring layer, the coupler providing communicative coupling between qubits of the superconducting quantum processor; depositing a passivating layer to overlie a part of the top superconducting wiring layer; and wherein depositing the second insulating layer to overlie the part of the first superconducting wiring layer includes providing a hybrid dielectric system comprising a first dielectric and a second dielectric, the first dielectric being a higher-quality dielectric relative to the second dielectric and wherein the depositing of the second insulating layer comprises: depositing the first dielectric to overlie the part of the first superconducting wiring layer; and depositing the second dielectric to overlie at least part of the first dielectric.