A light-emitting device comprising: a flip-chip light-emitting semiconductor die comprising a chip-upper surface, a chip-lower surface opposite to the chip-upper surface, a chip-edge surface extending between the chip-upper surface and the chip-lower surface, and an set of electrodes disposed on the chip-lower surface; a layer comprising a layer-upper surface, a layer-lower surface opposite to the layer-upper surface, and a layer-edge surface extending between the layer-upper surface and the layer-lower surface, wherein the layer-lower surface is disposed on the chip-upper surface of the flip-chip light-emitting semiconductor die, and is larger than the chip-upper surface; an adhesive layer disposed between the chip-upper surface of the flip-chip light-emitting semiconductor die and the layer-lower surface of the layer; a chip-side-spacer structure disposed adjacent to both the chip-edge surface of the flip-chip light-emitting semiconductor die and the layer-lower surface of the layer, wherein the chip-side-spacer structure includes a beveled side-spacer-edge surface connecting to the chip-edge surface, and a reflective structure surrounding and covering the side-spacer-edge surface of the chip-side-spacer structure, wherein the reflective structure comprises a reflector-bottom surface that is substantially flush with the chip-lower surface, and the reflective structure includes a transparent resin material and light-scattering particles in an amount of at least 20% by weight dispersed inside the transparent resin material, characterised in that the chip-side-spacer structure is made of a transparent silicone resin material having a refractive index of 1.45 or less. a flip-chip light-emitting semiconductor die comprising a chip-upper surface, a chip-lower surface opposite to the chip-upper surface, a chip-edge surface extending between the chip-upper surface and the chip-lower surface, and an set of electrodes disposed on the chip-lower surface; a layer comprising a layer-upper surface, a layer-lower surface opposite to the layer-upper surface, and a layer-edge surface extending between the layer-upper surface and the layer-lower surface, wherein the layer-lower surface is disposed on the chip-upper surface of the flip-chip light-emitting semiconductor die, and is larger than the chip-upper surface; an adhesive layer disposed between the chip-upper surface of the flip-chip light-emitting semiconductor die and the layer-lower surface of the layer; a chip-side-spacer structure disposed adjacent to both the chip-edge surface of the flip-chip light-emitting semiconductor die and the layer-lower surface of the layer, wherein the chip-side-spacer structure includes a beveled side-spacer-edge surface connecting to the chip-edge surface, and a reflective structure surrounding and covering the side-spacer-edge surface of the chip-side-spacer structure, wherein the reflective structure comprises a reflector-bottom surface that is substantially flush with the chip-lower surface, and the reflective structure includes a transparent resin material and light-scattering particles in an amount of at least 20% by weight dispersed inside the transparent resin material,