A light source unit (100, 110) comprising: a mounting substrate including interconnections; a plurality of semiconductor light emitting devices mounted on the mounting substrate and connected to the interconnections, each of the plurality of semiconductor light emitting devices including: a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode; a p-side interconnection electrically connected to the p-side electrode; an n-side interconnection electrically connected to the n-side electrode; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection; a first resin layer (160, 180) covering the plurality of semiconductor light emitting devices on the mounting substrate, the first resin layer (160, 180) transmitting light emitted from the light emitting layer; and a second resin layer provided on the first resin layer (160, 180), the second resin layer including a fluorescent substance arranged to emit light having a different wavelength from the light of the light emitting layer, wherein the first resin layer (160, 180) covers the first face and side face of the semiconductor devices and the surface of the mounting substrate between the adjacent semiconductor devices, the first resin layer (160, 180) having a flat surface on the second resin layer side. a mounting substrate including interconnections; a plurality of semiconductor light emitting devices mounted on the mounting substrate and connected to the interconnections, each of the plurality of semiconductor light emitting devices including: a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode; a p-side interconnection electrically connected to the p-side electrode; an n-side interconnection electrically connected to the n-side electrode; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection; a semiconductor layer having a first face and a second face opposite to the first face, and including a light emitting layer; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a first insulating film covering the semiconductor layer, the p-side electrode, and the n-side electrode; a p-side interconnection electrically connected to the p-side electrode; an n-side interconnection electrically connected to the n-side electrode; and a second insulating film provided on the first insulating film between the p-side interconnection and the n-side interconnection; a first resin layer (160, 180) covering the plurality of semiconductor light emitting devices on the mounting substrate, the first resin layer (160, 180) transmitting light emitted from the light emitting layer; and a second resin layer provided on the first resin layer (160, 180), the second resin layer including a fluorescent substance arranged to emit light having a different wavelength from the light of the light emitting layer, wherein the first resin layer (160, 180) covers the first face and side face of the semiconductor devices and the surface of the mounting substrate between the adjacent semiconductor devices, the first resin layer (160, 180) having a flat surface on the second resin layer side.