A three-in-one RGB mini-LED production method, wherein the production method includes: sequentially disposing a second electrical semiconductor layer, a multiple-quantum well layer, and a first electrical semiconductor layer on a substrate; depositing a plurality of mirrors on the first electrical semiconductor layer such that each of the mirrors being in electrical contact with the first electrical semiconductor layer; etching the first electrical semiconductor layer and the multiple-quantum well layer, exposing the second electrical semiconductor layer and forming a plurality of the first electrical semiconductor layers, and an area of each of the first electrical semiconductor layers being substantially greater than an area of each of the mirrors; depositing a protecting layer, exposing a first contact area above each of the mirrors, and exposing a second contact area above the second electrical semiconductor layer; disposing a first metal electrode above the first contact areas the area of each first metal electrode being greater than each first contact area; and disposing a second metal electrode above the second contact area, the area of the second metal electrode being greater than the second contact area; etching edges of the second electrical semiconductor layer, and exposing the substrate to be taken as a spacing region; covering, by a covering layer, and exposing only a partial area of the first metal electrode and a partial area of the second metal electrode, without covering the spacing region; preparing an RGB quantum dot filter, and adhering the RGB quantum dot filter to a backside of the substrate; and cutting according to the spacing region, thereby cutting out a strip shape or a rectangle shape, and forming a three-in-one RGB mini-LED structure; wherein a portion of the second electrical semiconductor layer is not covered by the multiple-quantum well layer; wherein an area of the portion of the second electrical semiconductor layer not covered by the multiple-quantum well layer is larger than an area of the second metal electrode. sequentially disposing a second electrical semiconductor layer, a multiple-quantum well layer, and a first electrical semiconductor layer on a substrate; depositing a plurality of mirrors on the first electrical semiconductor layer such that each of the mirrors being in electrical contact with the first electrical semiconductor layer; etching the first electrical semiconductor layer and the multiple-quantum well layer, exposing the second electrical semiconductor layer and forming a plurality of the first electrical semiconductor layers, and an area of each of the first electrical semiconductor layers being substantially greater than an area of each of the mirrors; depositing a protecting layer, exposing a first contact area above each of the mirrors, and exposing a second contact area above the second electrical semiconductor layer; disposing a first metal electrode above the first contact areas the area of each first metal electrode being greater than each first contact area; and disposing a second metal electrode above the second contact area, the area of the second metal electrode being greater than the second contact area; etching edges of the second electrical semiconductor layer, and exposing the substrate to be taken as a spacing region; covering, by a covering layer, and exposing only a partial area of the first metal electrode and a partial area of the second metal electrode, without covering the spacing region; preparing an RGB quantum dot filter, and adhering the RGB quantum dot filter to a backside of the substrate; and cutting according to the spacing region, thereby cutting out a strip shape or a rectangle shape, and forming a three-in-one RGB mini-LED structure; wherein a portion of the second electrical semiconductor layer is not covered by the multiple-quantum well layer; wherein an area of the portion of the second electrical semiconductor layer not covered by the multiple-quantum well layer is larger than an area of the second metal electrode.