A capacitive fingerprint sensing device for sensing a fingerprint pattern of a finger, said fingerprint sensing device comprising a semiconductor substrate; and an array of sensing elements formed on said semiconductor substrate, wherein each of said sensing elements comprises: a protective dielectric top layer to be touched by said finger; an electrically conductive sensing structure arranged underneath said top layer; and a charge amplifier connected to said sensing structure for providing a sensing signal indicative of a change of a charge carried by said sensing structure resulting from a change in a potential difference between said finger and said sensing structure, said charge amplifier comprising: a negative input connected to said sensing structure; a positive input; an output providing said sensing signal; a feedback capacitor connected between said negative input and said output; and a sense transistor having a gate constituting said negative input, wherein said sense transistor is formed in a well in said semiconductor substrate, an interface between said well and said substrate being configured in such a way that current can be prevented from flowing between said well and said substrate; and wherein said charge amplifier is configured in such a way that a potential at said negative input substantially follows a potential at said positive input, wherein said fingerprint sensing device further comprises: excitation signal providing circuitry, said excitation signal providing circuitry being: connected to said positive input and configured to change a potential at said positive input from a first potential to a second potential, to thereby change a potential of said sensing structure, thereby providing said change in potential difference between said finger and said sensing structure; and connected to said well for changing a potential of said well from a third potential to a fourth potential, a difference between said third potential and said fourth potential being substantially equal to a difference between said first potential and said second potential, at least at points in time that are relevant to measuring a capacitive coupling between the sensing structure and the finger to thereby reduce an influence of a parasitic capacitance between said sensing structure and said well. a protective dielectric top layer to be touched by said finger; an electrically conductive sensing structure arranged underneath said top layer; and a charge amplifier connected to said sensing structure for providing a sensing signal indicative of a change of a charge carried by said sensing structure resulting from a change in a potential difference between said finger and said sensing structure, said charge amplifier comprising: a negative input connected to said sensing structure; a positive input; an output providing said sensing signal; a feedback capacitor connected between said negative input and said output; and a sense transistor having a gate constituting said negative input, a negative input connected to said sensing structure; a positive input; an output providing said sensing signal; a feedback capacitor connected between said negative input and said output; and a sense transistor having a gate constituting said negative input, wherein said sense transistor is formed in a well in said semiconductor substrate, an interface between said well and said substrate being configured in such a way that current can be prevented from flowing between said well and said substrate; and wherein said charge amplifier is configured in such a way that a potential at said negative input substantially follows a potential at said positive input, wherein said fingerprint sensing device further comprises: excitation signal providing circuitry, said excitation signal providing circuitry being: connected to said positive input and configured to change a potential at said positive input from a first potential to a second potential, to thereby change a potential of said sensing structure, thereby providing said change in potential difference between said finger and said sensing structure; and connected to said well for changing a potential of said well from a third potential to a fourth potential, a difference between said third potential and said fourth potential being substantially equal to a difference between said first potential and said second potential, at least at points in time that are relevant to measuring a capacitive coupling between the sensing structure and the finger to thereby reduce an influence of a parasitic capacitance between said sensing structure and said well. connected to said positive input and configured to change a potential at said positive input from a first potential to a second potential, to thereby change a potential of said sensing structure, thereby providing said change in potential difference between said finger and said sensing structure; and connected to said well for changing a potential of said well from a third potential to a fourth potential, a difference between said third potential and said fourth potential being substantially equal to a difference between said first potential and said second potential, at least at points in time that are relevant to measuring a capacitive coupling between the sensing structure and the finger to thereby reduce an influence of a parasitic capacitance between said sensing structure and said well.