A semiconductor device comprising: a substrate; a gate electrode, a source electrode and a drain electrode which are placed on a first surface of the substrate, and have a plurality of fingers, respectively; a gate terminal electrode (G1-G4), a source terminal electrode (S1-S9), and a drain terminal electrode, which are placed on the first surface of the substrate, and each tie a plurality of fingers; a plurality of active areas (AA1-AA5) placed on the substrate under the gate electrode, the source electrode, and the drain electrode; a plurality of non-active areas placed on the substrate under the gate electrode, the source electrode and the drain electrode, where the active areas are not provided, and a via hole connected to the source terminal electrode, wherein, the plurality of active (AA1-AA5) and non-active areas comprise stripes extending in a first direction, and the plurality of the non-active areas and the plurality of active area are alternately provided in the first direction, wherein a plurality of gate bus lines to which each finger of the gate electrode is connected are provided, and each gate bus line is connected to the gate terminal electrode (G1-G4), thereby forming a fishbone placement, the respective gate bus lines of the fishbone placement being provided on the respective stripe-shaped non-active areas provided between the active areas extending in the first direction, the respective fingers of the gate electrodes being extracted from the respective gate bus lines in two opposite directions perpendicular to the gate bus line, wherein a plurality of drain bus lines to which each finger of the drain electrode is connected are provided, and each drain bus line is connected to the drain terminal electrode, thereby forming a fishbone placement, the respective drain bus lines of the fishbone placement being provided on the respective active areas extending in the first direction, the respective fingers of the drain electrode being extracted from the respective drain bus lines lines in two opposite directions perpendicular to the drain bus line, and wherein the parts of the source electrode crossing fingers of the gate and the drain electrodes have an air bridge structure. a substrate; a gate electrode, a source electrode and a drain electrode which are placed on a first surface of the substrate, and have a plurality of fingers, respectively; a gate terminal electrode (G1-G4), a source terminal electrode (S1-S9), and a drain terminal electrode, which are placed on the first surface of the substrate, and each tie a plurality of fingers; a plurality of active areas (AA1-AA5) placed on the substrate under the gate electrode, the source electrode, and the drain electrode; a plurality of non-active areas placed on the substrate under the gate electrode, the source electrode and the drain electrode, where the active areas are not provided, and a via hole connected to the source terminal electrode, wherein, the plurality of active (AA1-AA5) and non-active areas comprise stripes extending in a first direction, and the plurality of the non-active areas and the plurality of active area are alternately provided in the first direction, wherein a plurality of gate bus lines to which each finger of the gate electrode is connected are provided, and each gate bus line is connected to the gate terminal electrode (G1-G4), thereby forming a fishbone placement, the respective gate bus lines of the fishbone placement being provided on the respective stripe-shaped non-active areas provided between the active areas extending in the first direction, the respective fingers of the gate electrodes being extracted from the respective gate bus lines in two opposite directions perpendicular to the gate bus line, wherein a plurality of drain bus lines to which each finger of the drain electrode is connected are provided, and each drain bus line is connected to the drain terminal electrode, thereby forming a fishbone placement, the respective drain bus lines of the fishbone placement being provided on the respective active areas extending in the first direction, the respective fingers of the drain electrode being extracted from the respective drain bus lines lines in two opposite directions perpendicular to the drain bus line, and wherein the parts of the source electrode crossing fingers of the gate and the drain electrodes have an air bridge structure.