A display unit comprising: a substrate; a plurality of thin film transistors arranged on the substrate; and a plurality of organic light emitting devices (130B, 130G, 130R) arranged on the plurality of thin film transistors, wherein, the organic light emitting devices (130B, 130G, 130R) comprise: a first metal layer; a second metal layer (1162B, 1162G. 1162R); a first light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a first light emission region, and configured to emit red light reflected by the first metal layer and transmitted through the second metal layer; a second light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a second light emission region, and configured to emit green light reflected by the first metal layer and transmitted through the second metal layer; and a third light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a third light emission region, and configured to emit blue light reflected by the first metal layer and transmitted through the second metal layer, wherein the first, second, and third light emitting layers are made of an identical light emitting layer extending throughout the plurality of organic light emitting devices (130B, 130G, 130R), in the first light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a first distance from the first metal layer, in the second light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a second distance from the first metal layer, in the third light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a third distance from the first metal layer, the first distance is larger than the second distance, the second distance is larger than the third distance, the first, second and third distances are set to provide a resonator structure, and the second metal layer includes an alloy of ytterbium (Yb) and silver (Ag). a substrate; a plurality of thin film transistors arranged on the substrate; and a plurality of organic light emitting devices (130B, 130G, 130R) arranged on the plurality of thin film transistors, the organic light emitting devices (130B, 130G, 130R) comprise: a first metal layer; a second metal layer (1162B, 1162G. 1162R); a first light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a first light emission region, and configured to emit red light reflected by the first metal layer and transmitted through the second metal layer; a second light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a second light emission region, and configured to emit green light reflected by the first metal layer and transmitted through the second metal layer; and a third light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a third light emission region, and configured to emit blue light reflected by the first metal layer and transmitted through the second metal layer, a first metal layer; a second metal layer (1162B, 1162G. 1162R); a first light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a first light emission region, and configured to emit red light reflected by the first metal layer and transmitted through the second metal layer; a second light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a second light emission region, and configured to emit green light reflected by the first metal layer and transmitted through the second metal layer; and a third light emitting layer disposed between the first metal layer and the second metal layer (1162B, 1162G, 1162R) in a third light emission region, and configured to emit blue light reflected by the first metal layer and transmitted through the second metal layer, wherein the first, second, and third light emitting layers are made of an identical light emitting layer extending throughout the plurality of organic light emitting devices (130B, 130G, 130R), in the first light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a first distance from the first metal layer, in the second light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a second distance from the first metal layer, in the third light emission region, the second metal layer (1162B, 1162G, 1162R) is arranged at a third distance from the first metal layer, the first distance is larger than the second distance, the second distance is larger than the third distance, the first, second and third distances are set to provide a resonator structure, and the second metal layer includes an alloy of ytterbium (Yb) and silver (Ag).