A bidirectional thyristor device comprising - a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, and - a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, wherein - the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, - the first main electrode acts as a cathode for a first thyristor functional element of the bidirectional thyristor device and as an anode for a second antiparallel thyristor functional element of the bidirectional thyristor device, - the first main electrode adjoins at least one first emitter region of the second conductivity type and a plurality of first emitter short regions of the first conductivity type, - the second main electrode adjoins at least one second emitter region of the second conductivity type and a plurality of second emitter short regions of the first conductivity type, characterized in that - an arrangement of the plurality of first emitter short regions at the first main surface differs from an arrangement of the plurality of second emitter short regions at the second main surface when seen along the vertical direction, so that the bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element, and - the bidirectional thyristor device comprises at least one of: (i) a first gate electrode on the first main surface, wherein the first main electrode comprises a plurality of first segments that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode when seen along the vertical direction; and (ii) a second gate electrode on the second main surface, wherein the second main electrode comprises a plurality of second segments that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode when seen along the vertical direction. - a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, and - a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, wherein - the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer, - the first main electrode acts as a cathode for a first thyristor functional element of the bidirectional thyristor device and as an anode for a second antiparallel thyristor functional element of the bidirectional thyristor device, - the first main electrode adjoins at least one first emitter region of the second conductivity type and a plurality of first emitter short regions of the first conductivity type, - the second main electrode adjoins at least one second emitter region of the second conductivity type and a plurality of second emitter short regions of the first conductivity type, characterized in that - an arrangement of the plurality of first emitter short regions at the first main surface differs from an arrangement of the plurality of second emitter short regions at the second main surface when seen along the vertical direction, so that the bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element, and - the bidirectional thyristor device comprises at least one of: (i) a first gate electrode on the first main surface, wherein the first main electrode comprises a plurality of first segments that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode when seen along the vertical direction; and (ii) a second gate electrode on the second main surface, wherein the second main electrode comprises a plurality of second segments that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode when seen along the vertical direction. (i) a first gate electrode on the first main surface, wherein the first main electrode comprises a plurality of first segments that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode when seen along the vertical direction; and (ii) a second gate electrode on the second main surface, wherein the second main electrode comprises a plurality of second segments that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode when seen along the vertical direction.