Process for producing at least a first (205, 300) and a second micromirror device, wherein the process comprises the following process steps: - providing (10, 11) a silicon wafer (100, 101), in particular plate-shaped, having a front and a rear, and - applying a silicon oxide layer to at least the front of the silicon wafer (100, 101), in particular with a layer thickness of the silicon oxide layer in a range from 1 μm to 3 μm, and - removing the silicon oxide layer, in particular up to an outer surface of the silicon wafer (100, 101), such that at least one first separation region and at least a second separation region of the silicon oxide layer are produced, wherein the first and the second separation region of the silicon oxide layer are arranged separately from each other spatially, along a separation plane, and - applying a silicon layer (150, 350), in particular a polysilicon layer having a layer thickness in a range from 5 μm to 50 μm, to the front of the silicon wafer (100, 101) and to the silicon oxide layer, in particular to the first and second separation regions of the silicon oxide layer, and - applying an etching mask to the rear of the silicon wafer, wherein the etching mask has a first opening along the separation plane of the first and second separation regions of the silicon oxide layer, and - removing the silicon layer (150, 350) and the silicon wafer (100, 101) by means of an etching process in one process step depending on the etching mask on the rear of the silicon wafer (100, 101) and depending on the silicon oxide layer of the silicon wafer (100, 101), in particular the first and second separation regions of the silicon oxide layer, so that at least a first (205, 300) and a second micromirror device are produced. - providing (10, 11) a silicon wafer (100, 101), in particular plate-shaped, having a front and a rear, and - applying a silicon oxide layer to at least the front of the silicon wafer (100, 101), in particular with a layer thickness of the silicon oxide layer in a range from 1 μm to 3 μm, and - removing the silicon oxide layer, in particular up to an outer surface of the silicon wafer (100, 101), such that at least one first separation region and at least a second separation region of the silicon oxide layer are produced, wherein the first and the second separation region of the silicon oxide layer are arranged separately from each other spatially, along a separation plane, and - applying a silicon layer (150, 350), in particular a polysilicon layer having a layer thickness in a range from 5 μm to 50 μm, to the front of the silicon wafer (100, 101) and to the silicon oxide layer, in particular to the first and second separation regions of the silicon oxide layer, and - applying an etching mask to the rear of the silicon wafer, wherein the etching mask has a first opening along the separation plane of the first and second separation regions of the silicon oxide layer, and - removing the silicon layer (150, 350) and the silicon wafer (100, 101) by means of an etching process in one process step depending on the etching mask on the rear of the silicon wafer (100, 101) and depending on the silicon oxide layer of the silicon wafer (100, 101), in particular the first and second separation regions of the silicon oxide layer, so that at least a first (205, 300) and a second micromirror device are produced.