A light emitting diode device comprising: a first semiconductor layer of a first type; a second semiconductor layer of a second type different from the first type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light based on a difference between a voltage applied to the first semiconductor layer and a voltage applied to the second semiconductor layer; and a filter formed on the second semiconductor layer and configured to transmit light in a second wavelength band within a first wavelength band, wherein the filter includes a defect layer, first refractive layers (121, 121'), and second refractive layers (123, 123') having a refractive index greater than a refractive index of each of the first refractive layers, respectively, wherein the first refractive layers and the second refractive layers are formed alternately with each other on one side and other side of the defect layer, and wherein the defect layer is formed in a thickness based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer, wherein the center wavelength of the first wavelength band is a wavelength that is an average of a minimum wavelength and a maximum wavelength of the first wavelength band, wherein the peak wavelength of the second wavelength band is a wavelength of light having the greatest amount of transmission in the second wavelength band, wherein the first refractive layers and the second refractive layers are formed alternately with each other between the second semiconductor layer and the defect layer in an order of one of the first refractive layers formed on the second semiconductor layer followed by one of the second refractive layers, wherein the first refractive layers and the second refractive layers are formed alternately with each other on the defect layer in an order of one of the second refractive layers formed on the defect layer followed by one of the first refractive layers, wherein a number of the first refractive layers and the second refractive layers formed on one side of the defect layer is the same as a number of the first refractive layers and the second refractive layers formed on the other side of the defect layer, wherein the thickness of the defect layer (d defect) is determined as follows: and wherein n L is the refractive index of the first refractive layers and the defect layer, λ 0 is the center wavelength of the first wavelength band, and λ p is the peak wavelength of the second wavelength band. a first semiconductor layer of a first type; a second semiconductor layer of a second type different from the first type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light based on a difference between a voltage applied to the first semiconductor layer and a voltage applied to the second semiconductor layer; and a filter formed on the second semiconductor layer and configured to transmit light in a second wavelength band within a first wavelength band, wherein the filter includes a defect layer, first refractive layers (121, 121'), and second refractive layers (123, 123') having a refractive index greater than a refractive index of each of the first refractive layers, respectively, wherein the first refractive layers and the second refractive layers are formed alternately with each other on one side and other side of the defect layer, and wherein the defect layer is formed in a thickness based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer, wherein the center wavelength of the first wavelength band is a wavelength that is an average of a minimum wavelength and a maximum wavelength of the first wavelength band, wherein the peak wavelength of the second wavelength band is a wavelength of light having the greatest amount of transmission in the second wavelength band, wherein the first refractive layers and the second refractive layers are formed alternately with each other between the second semiconductor layer and the defect layer in an order of one of the first refractive layers formed on the second semiconductor layer followed by one of the second refractive layers, wherein the first refractive layers and the second refractive layers are formed alternately with each other on the defect layer in an order of one of the second refractive layers formed on the defect layer followed by one of the first refractive layers, wherein a number of the first refractive layers and the second refractive layers formed on one side of the defect layer is the same as a number of the first refractive layers and the second refractive layers formed on the other side of the defect layer, wherein the thickness of the defect layer (d defect) is determined as follows: and wherein n L is the refractive index of the first refractive layers and the defect layer, λ 0 is the center wavelength of the first wavelength band, and λ p is the peak wavelength of the second wavelength band.