A three-dimensional memory device comprising: a stack of alternating layers comprising insulator layers and electrically conductive layers and located over a top surface of a substrate; a semiconductor channel, wherein at least one end portion of the semiconductor channel extends substantially perpendicular to the top surface of the substrate; and a memory film located adjacent to the semiconductor channel; wherein each of the electrically conductive layers comprises a first conductive material portion including a tensile-stress-generating metallic material such that the first conductive material portion applies tensile stress to another element to which the first conductive material portion is attached and a second conductive material portion including a compressive-stress-generating metallic material such that the second conductive material portion applies compressive stress to another element to which the second conductive material portion is attached, wherein: the first conductive material portion comprises ruthenium, wherein the first conductive material portion comprises a vertical portion contacting the memory film and a pair of horizontal portions laterally extending from the vertical portion and vertically spaced apart from each other; and the second conductive material portion comprises tungsten and is located between the pair of horizontal portions of the first conductive material portion and contacting the vertical portion of the first conductive material portion. a stack of alternating layers comprising insulator layers and electrically conductive layers and located over a top surface of a substrate; a semiconductor channel, wherein at least one end portion of the semiconductor channel extends substantially perpendicular to the top surface of the substrate; and a memory film located adjacent to the semiconductor channel; wherein each of the electrically conductive layers comprises a first conductive material portion including a tensile-stress-generating metallic material such that the first conductive material portion applies tensile stress to another element to which the first conductive material portion is attached and a second conductive material portion including a compressive-stress-generating metallic material such that the second conductive material portion applies compressive stress to another element to which the second conductive material portion is attached, wherein: the first conductive material portion comprises ruthenium, wherein the first conductive material portion comprises a vertical portion contacting the memory film and a pair of horizontal portions laterally extending from the vertical portion and vertically spaced apart from each other; and the second conductive material portion comprises tungsten and is located between the pair of horizontal portions of the first conductive material portion and contacting the vertical portion of the first conductive material portion. the first conductive material portion comprises ruthenium, wherein the first conductive material portion comprises a vertical portion contacting the memory film and a pair of horizontal portions laterally extending from the vertical portion and vertically spaced apart from each other; and the second conductive material portion comprises tungsten and is located between the pair of horizontal portions of the first conductive material portion and contacting the vertical portion of the first conductive material portion.