Method for producing a thin-film laminated film, comprising: a step in which a plastic film is prepared; a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a carbon-based starting material gas which is a mixture of a diluent gas comprising an inert gas and a hydrocarbon gas whereby the carbon-based starting material gas forms a discharge plasma, and the carbon-based starting material gas formed into a discharge plasma is brought into contact with one surface of the plastic film to form a first amorphous carbon-based thin film; a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a metal-oxide starting material gas which is a mixture of a diluent gas comprising an inert gas, a vaporized silicon-containing organic metal compound and oxygen gas whereby the metal-oxide starting material gas forms a discharge plasma, and the metal-oxide starting material gas formed into a discharge plasma is brought into contact with one surface of the first amorphous carbon-based thin film to form a first silicon oxide-based thin film having pinholes with a diameter in the range of 10-200 nm; and a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a carbon-based starting material gas which is a mixture of a diluent gas comprising an inert gas and a hydrocarbon gas whereby the carbon-based starting material gas forms a discharge plasma, and the carbon-based starting material gas formed into a discharge plasma is brought into contact with one surface of the first silicon oxide-based thin film to form a second amorphous carbon-based thin film. a step in which a plastic film is prepared; a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a carbon-based starting material gas which is a mixture of a diluent gas comprising an inert gas and a hydrocarbon gas whereby the carbon-based starting material gas forms a discharge plasma, and the carbon-based starting material gas formed into a discharge plasma is brought into contact with one surface of the plastic film to form a first amorphous carbon-based thin film; a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a metal-oxide starting material gas which is a mixture of a diluent gas comprising an inert gas, a vaporized silicon-containing organic metal compound and oxygen gas whereby the metal-oxide starting material gas forms a discharge plasma, and the metal-oxide starting material gas formed into a discharge plasma is brought into contact with one surface of the first amorphous carbon-based thin film to form a first silicon oxide-based thin film having pinholes with a diameter in the range of 10-200 nm; and a step in which a high-frequency pulse voltage is applied under atmospheric pressure to a carbon-based starting material gas which is a mixture of a diluent gas comprising an inert gas and a hydrocarbon gas whereby the carbon-based starting material gas forms a discharge plasma, and the carbon-based starting material gas formed into a discharge plasma is brought into contact with one surface of the first silicon oxide-based thin film to form a second amorphous carbon-based thin film.