A semiconductor light emitting device comprising: - a second electrode layer; - a light emitting unit comprising a plurality of compound semiconductor layers (110, 130) under one portion of the second electrode layer, wherein the light emitting unit comprises a second conductivity type semiconductor layer under the second electrode layer; a first active layer under the second conductivity type semiconductor layer; and a first conductivity type semiconductor layer under the first active layer; - a first insulating layer under the other portion of the second electrode layer; - an electrostatic protection unit comprising a plurality of compound semiconductor layers (132, 112) under the first insulating layer, wherein the electrostatic protection unit comprises a fourth semiconductor layer under the first insulating layer; a second active layer under the fourth semiconductor layer; and a third semiconductor layer under the second active layer, wherein the light emitting unit and the electrostatic protection unit have the same semiconductor layer structure and the first conductivity type semiconductor layer is formed of the same semiconductor material as the third semiconductor layer, the first active layer is formed of the same semiconductor material as the second active layer, and the second conductivity type semiconductor layer is formed of the same semiconductor material as the fourth semiconductor layer; - a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit, wherein the first electrode layer is electrically connected between a first conductivity type semiconductor layer of the light emitting unit and the fourth semiconductor layer of the electrostatic protection unit; - a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer, wherein the wiring layer is electrically connected between a third semiconductor layer of the electrostatic protection unit and the second electrode layer; - a second insulating layer between the first electrode layer and semiconductor layers of the light emitting unit; and - a third insulating layer between the wiring layer and semiconductor layers of the electrostatic protection unit; wherein the second electrode layer is electrically connected to the second conductivity type semiconductor layer; characterised in that the first insulating layer is also formed on the outer periphery of the upper surface of the second conductivity type semiconductor layer between the second electrode layer and the light emitting unit. - a second electrode layer; - a light emitting unit comprising a plurality of compound semiconductor layers (110, 130) under one portion of the second electrode layer, wherein the light emitting unit comprises a second conductivity type semiconductor layer under the second electrode layer; a first active layer under the second conductivity type semiconductor layer; and a first conductivity type semiconductor layer under the first active layer; - a first insulating layer under the other portion of the second electrode layer; - an electrostatic protection unit comprising a plurality of compound semiconductor layers (132, 112) under the first insulating layer, wherein the electrostatic protection unit comprises a fourth semiconductor layer under the first insulating layer; a second active layer under the fourth semiconductor layer; and a third semiconductor layer under the second active layer, wherein the light emitting unit and the electrostatic protection unit have the same semiconductor layer structure and the first conductivity type semiconductor layer is formed of the same semiconductor material as the third semiconductor layer, the first active layer is formed of the same semiconductor material as the second active layer, and the second conductivity type semiconductor layer is formed of the same semiconductor material as the fourth semiconductor layer; - a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit, wherein the first electrode layer is electrically connected between a first conductivity type semiconductor layer of the light emitting unit and the fourth semiconductor layer of the electrostatic protection unit; - a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer, wherein the wiring layer is electrically connected between a third semiconductor layer of the electrostatic protection unit and the second electrode layer; - a second insulating layer between the first electrode layer and semiconductor layers of the light emitting unit; and - a third insulating layer between the wiring layer and semiconductor layers of the electrostatic protection unit;