A solid-state image capturing element comprising: a semiconductor substrate; a first photoelectric conversion part provided above the semiconductor substrate and configured to convert light into electric charge; and a second photoelectric conversion part provided above the first photoelectric conversion part and configured to convert light into electric charge, wherein the first and the second photoelectric conversion parts (500, 600) each have a laminated structure including an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode (502, 602) and the lower electrode (508, 608), and an accumulation electrode (510, 610) facing the upper electrode (502, 602) through the photoelectric conversion film (504, 604) and an insulating film (506, 606), and the lower electrode (508, 608) of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts (500, 600) and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts (500, 600) in the semiconductor substrate, wherein the lower electrode of the second photoelectric conversion part is electrically connected with the lower electrode of the first photoelectric conversion part through a first penetration electrode penetrating through the first photoelectric conversion part, and wherein when the solid-state image capturing element is viewed from above, a first exposure region that is exposed through an opening provided at the insulating film of the first photoelectric conversion part and contacts the photoelectric conversion film of the first photoelectric conversion part is provided at part of the lower electrode of the first photoelectric conversion part, and a first contact region contacting the first penetration electrode is provided at a remaining part of the lower electrode of the first photoelectric conversion part. a semiconductor substrate; a first photoelectric conversion part provided above the semiconductor substrate and configured to convert light into electric charge; and a second photoelectric conversion part provided above the first photoelectric conversion part and configured to convert light into electric charge, wherein the first and the second photoelectric conversion parts (500, 600) each have a laminated structure including an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode (502, 602) and the lower electrode (508, 608), and an accumulation electrode (510, 610) facing the upper electrode (502, 602) through the photoelectric conversion film (504, 604) and an insulating film (506, 606), and an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode (502, 602) and the lower electrode (508, 608), and an accumulation electrode (510, 610) facing the upper electrode (502, 602) through the photoelectric conversion film (504, 604) and an insulating film (506, 606), and the lower electrode (508, 608) of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts (500, 600) and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts (500, 600) in the semiconductor substrate, wherein the lower electrode of the second photoelectric conversion part is electrically connected with the lower electrode of the first photoelectric conversion part through a first penetration electrode penetrating through the first photoelectric conversion part, and wherein when the solid-state image capturing element is viewed from above, a first exposure region that is exposed through an opening provided at the insulating film of the first photoelectric conversion part and contacts the photoelectric conversion film of the first photoelectric conversion part is provided at part of the lower electrode of the first photoelectric conversion part, and a first contact region contacting the first penetration electrode is provided at a remaining part of the lower electrode of the first photoelectric conversion part.