mhurhangee/ep-ind-claims huggingface dataset:
An image processing apparatus, comprising: reading means configured to perform reading processing to read a document and to generate image data based on the document; and selection means configured to receive a user input to select an output process from a plurality of output processes for outputting the image data generated by the reading processing, automatic scanning setting to set whether to perform automatic scanning in which a document is automatically scanned without pressing of a job start button, wherein the selection means is configured to receive the user input to select the output process while the reading means performs the reading processing, wherein a first setting screen is displayed when the selection means selects an output process before the reading means performs the reading processing and a second setting screen, different from the first setting screen, is displayed when the selection means selects the output process while the reading means performs the reading processing, in case the automatic scanning processing has been triggered, and wherein the first or second setting screens (600, 700) is displayed on an operation panel upon selection by the user of a copy button on a home screen on the operation panel, and wherein the first and second setting screens (600, 700) include a job start button allowing the user to instruct execution of a copy function as the output process in which an image is printed on a sheet based on the image data generated by the reading processing. reading means configured to perform reading processing to read a document and to generate image data based on the document; and selection means configured to receive a user input to select an output process from a plurality of output processes for outputting the image data generated by the reading processing, automatic scanning setting to set whether to perform automatic scanning in which a document is automatically scanned without pressing of a job start button, wherein the selection means is configured to receive the user input to select the output process while the reading means performs the reading processing, wherein a first setting screen is displayed when the selection means selects an output process before the reading means performs the reading processing and a second setting screen, different from the first setting screen, is displayed when the selection means selects the output process while the reading means performs the reading processing, in case the automatic scanning processing has been triggered, and wherein the first or second setting screens (600, 700) is displayed on an operation panel upon selection by the user of a copy button on a home screen on the operation panel, and wherein the first and second setting screens (600, 700) include a job start button allowing the user to instruct execution of a copy function as the output process in which an image is printed on a sheet based on the image data generated by the reading processing.
A method for analyzing an analyte's diffusion rate, comprising: a. providing a sheet of material having a plurality of through holes that are of similar diameter, the through holes having openings on both faces of the sheet of material; b. restricting openings of the through holes on at least one face of the sheet of material; c. inserting an analyte into a sub-population of said through holes, wherein the restricting in step b. prevents passage of the analyte through the through holes; d. applying an electric field through said through holes containing the analyte; and e. measuring a change in electric current flow with time, wherein the change is indicative of the diffusion rates of said analyte diffusing out of the through holes, wherein said sheet of material comprises a material having a property selected from the group consisting of: being electrically insulating; being chemically inert; having a thickness in a range of 1 nm to 10 cm; and having through holes of diameters in a range of 1 nm to 1 cm. a. providing a sheet of material having a plurality of through holes that are of similar diameter, the through holes having openings on both faces of the sheet of material; b. restricting openings of the through holes on at least one face of the sheet of material; c. inserting an analyte into a sub-population of said through holes, wherein the restricting in step b. prevents passage of the analyte through the through holes; d. applying an electric field through said through holes containing the analyte; and e. measuring a change in electric current flow with time, wherein the change is indicative of the diffusion rates of said analyte diffusing out of the through holes, wherein said sheet of material comprises a material having a property selected from
A food product slicing apparatus comprising: a frame; an upper drive assembly mounted on said frame and including an upper belt; and a lower drive assembly mounted on said frame and including a lower belt; wherein the upper belt is configured to engage a top surface of a food product block to be sliced and the lower belt is configured to engage a bottom surface of the food product block; a pressure adjustment assembly configured to adjust the position of the front end of the upper drive assembly, said pressure adjustment assembly including: wheels around which said upper belt is mounted characterized by plates pivotally mounted on said frame, said wheels mounted between said plates, and a drive member engaged with said plates, and wherein when said drive member is engaged, said plates and wheels pivot about a pivot shaft. a frame; an upper drive assembly mounted on said frame and including an upper belt; and a lower drive assembly mounted on said frame and including a lower belt; wherein the upper belt is configured to engage a top surface of a food product block to be sliced and the lower belt is configured to engage a bottom surface of the food product block; a pressure adjustment assembly configured to adjust the position of the front end of the upper drive assembly, said pressure adjustment assembly including: wheels around which said upper belt is mounted characterized by plates pivotally mounted on said frame, said wheels mounted between said plates, and a drive member engaged with said plates, and wherein when said drive member is engaged, said plates and wheels pivot about a pivot shaft. wheels around which said upper belt is mounted characterized by plates pivotally mounted on said frame, said wheels mounted between said plates, and a drive member engaged with said plates, and wherein when said drive member is engaged, said plates and wheels pivot about a pivot shaft.
A lock cylinder for a baggage lock, having a cylinder housing, furthermore having a cylinder core which is rotatable in the cylinder housing and which has a keyway with a key insertion opening and having a plurality of tumblers (15, 17) which are arranged in two rows which are oppositely disposed along the keyway, wherein the lock cylinder is actuable by means of an associated dimpled key which includes, on two mutually oppositely disposed flat sides, a respective coding section (41, 45) provided with dimples (29, 31) and a respective end section (43, 47) adjoining said coding section and extending up to the key tip, wherein the associated key is in particular of the type TSA006, wherein the tumbler of at least one of the rows furthest from the key insertion opening is arranged in a section of the keyway which receives the dimple-free end section (43, 47) of the associated key, characterized in that the cylinder core has, in a region which receives the key tip, a plurality of webs which extend in the key insertion direction, with the webs projecting into the keyway to engage into complementary made grooves of the associated key when the associated key has been inserted into the keyway, wherein the named furthest remote tumbler includes a core pin with a core pin axis which extends through a groove of the cylinder core formed between the webs of the cylinder core so that the core pin cooperates with a web of the associated key when the associated key has been inserted into the key passage.
An autonomous driving control method carried out by an autonomous driving control system using a controller that executes an autonomous driving control for causing a host vehicle to travel along a target travel route generated on a map, comprising: setting one or a plurality of target passage gates through which the host vehicle is scheduled to pass from among a plurality of gates of a toll plaza, during passage through the toll plaza while traveling along the target travel route; determining whether there is traffic congestion near the toll plaza, including in or before a toll plaza area; executing an autonomous driving control for causing the host vehicle to travel along the target travel route if there is no traffic congestion; determining (S4b) a presence or absence of at least one preceding vehicle traveling in front of the host vehicle that has a predicted passage gate that matches the target passage gate of the host vehicle if there is traffic congestion; carrying out (S6, S7b) following travel using the preceding vehicle as a follow target if there is traffic congestion and the preceding vehicle that has the predicted passage gate that matches the target passage gate is present; and executing the autonomous driving control for causing the host vehicle to travel along the target travel route if there is traffic congestion and the preceding vehicle that has the predicted passage gate that matches the target passage gate is not present. setting one or a plurality of target passage gates through which the host vehicle is scheduled to pass from among a plurality of gates of a toll plaza, during passage through the toll plaza while traveling along the target travel route; determining whether there is traffic congestion near the toll plaza, including in or before a toll plaza area; executing an autonomous driving control for causing the host vehicle to travel along the target travel route if there is no traffic congestion; determining (S4b) a presence or absence of at least one preceding vehicle traveling in front of the host vehicle that has a predicted passage gate that matches the target passage gate of the host vehicle if there is traffic congestion; carrying out (S6, S7b) following travel using the preceding vehicle as a follow target if there is traffic congestion and the preceding vehicle that has the predicted passage gate that matches the target passage gate is present; and executing the autonomous driving control for causing the host vehicle to travel along the target travel route if there is traffic congestion and the preceding vehicle that has the predicted passage gate that matches the target passage gate is not present.
A multilayer UV filter particle, comprising: an odd number of alternating layers of high and low refractive index materials, wherein each layer has a refractive index that differs from that of adjacent layers by at least 0.2, the total number of layers is at least 9, and the particle does not contain a substrate. an odd number of alternating layers of high and low refractive index materials, wherein each layer has a refractive index that differs from that of adjacent layers by at least 0.2, the total number of layers is at least 9, and the particle does not contain a substrate.
A mat racer, comprising: a mat configured to accommodate a rider, wherein the mat comprises a rider surface configured to support the rider and an opposing surface configured to contact a ride floor or slide surface; one or more handles coupled to the mat; and a functional module disposed on the mat, wherein the functional module comprises one or more light sources that are positioned on or in the functional module, wherein the functional module comprises: a light drive configured to drive the one or more light sources; a transceiver configured to communicate with a wearable device worn by the rider in use to receive information associated with the wearable device; a memory storing instructions to control the light drive; and a processor configured to execute the instructions, wherein the instructions comprise instructions to activate the one or more light sources based at least in part on the information associated with the wearable device. a mat configured to accommodate a rider, wherein the mat comprises a rider surface configured to support the rider and an opposing surface configured to contact a ride floor or slide surface; one or more handles coupled to the mat; and a functional module disposed on the mat, wherein the functional module comprises one or more light sources that are positioned on or in the functional module, wherein the functional module comprises: a light drive configured to drive the one or more light sources; a transceiver configured to communicate with a wearable device worn by the rider in use to receive information associated with the wearable device; a memory storing instructions to control the light drive; and a processor configured to execute the instructions, wherein the instructions comprise instructions to activate the one or more light sources based at least in part on the information associated with the wearable device. a light drive configured to drive the one or more light sources; a transceiver configured to communicate with a wearable device worn by the rider in use to receive information associated with the wearable device; a memory storing instructions to control the light drive; and a processor configured to execute the instructions, wherein the instructions comprise instructions to activate the one or more light sources based at least in part on the information associated with the wearable device.
A method for supporting a quality of service, QoS, the method performed by a session management function, SMF, node and comprising: receiving a request message related to a protocol data unit, PDU, session, wherein the PDU session relates to a multi-access, MA, PDU session over a 3rd generation partnership project, 3GPP, access and a non-3GPP access; and transmitting a QoS profile, wherein the QoS profile is transmitted to both of the 3GPP access and the non-3GPP access, based on (i) that a QoS flow is non-guaranteed bit rate, non-GBR, QoS flow, and wherein the QoS profile is transmitted to one access of the 3GPP access and the non-3GPP access, based on (ii) that the QoS flow is a GBR QoS flow. receiving a request message related to a protocol data unit, PDU, session, wherein the PDU session relates to a multi-access, MA, PDU session over a 3rd generation partnership project, 3GPP, access and a non-3GPP access; and transmitting a QoS profile, wherein the QoS profile is transmitted to both of the 3GPP access and the non-3GPP access, based on (i) that a QoS flow is non-guaranteed bit rate, non-GBR, QoS flow, and wherein the QoS profile is transmitted to one access of the 3GPP access and the non-3GPP access, based on (ii) that the QoS flow is a GBR QoS flow.
A method of forming a power semiconductor device comprising the steps of: A. providing a substrate of a first or second conductivity type; B. forming a voltage sustaining region on said substrate by: 1. depositing an epitaxial layer of single crystal silicon on the substrate, said epitaxial layer having a first conductivity type; 2. forming at least one trench in said epitaxial layer; 3. providing in said trench on its bottom and sidewalls a first layer of polysilicon, having a second dopant of the second conductivity type; 4. diffusing said second dopant to form a doped epitaxial region adjacent to said trench and in said epitaxial layer; C. forming over said voltage sustaining region at least one region of said second conductivity type to define a junction therebetween; characterised in that the step of forming a voltage sustaining region further comprises: 5. providing in said trench a second layer of polysilicon, having a first dopant of the first conductivity type; and 6. interdiffusing the first and second dopants respectively located in the second and first layers of polysilicon to achieve electrical compensation in the first and second layers of polysilicon. A. providing a substrate of a first or second conductivity type; B. forming a voltage sustaining region on said substrate by: 1. depositing an epitaxial layer of single crystal silicon on the substrate, said epitaxial layer having a first conductivity type; 2. forming at least one trench in said epitaxial layer; 3. providing in said trench on its bottom and sidewalls a first layer of polysilicon, having a second dopant of the second conductivity type; 4. diffusing said second dopant to form a doped epitaxial region adjacent to said trench and in said epitaxial layer; 1. depositing an epitaxial layer of single crystal silicon on the substrate, said epitaxial layer having a first conductivity type; 2. forming at least one trench in said epitaxial layer; 3. providing in said trench on its bottom and sidewalls a first layer of polysilicon, having a second dopant of the second conductivity type; 4. diffusing said second dopant to form a doped epitaxial region adjacent to said trench and in said epitaxial layer; C. forming over said voltage sustaining region at least one region of said second conductivity type to define a junction therebetween; characterised in that the step of forming a voltage sustaining region further comprises: 5. providing in said trench a second layer of polysilicon, having a first dopant of the first conductivity type; and 6. interdiffusing the first and second dopants respectively located in the second and first layers of polysilicon to achieve electrical compensation in the first and second layers of polysilicon. 5. providing in said trench a second layer of polysilicon, having a first dopant of the first conductivity type; and 6. interdiffusing the first and second dopants respectively located in the second and first layers of polysilicon to achieve electrical compensation in the first and second layers of polysilicon.
An overvoltage protection device comprising a bipolar transistor structure connected between a node to be protected and a discharge path, wherein the bipolar transistor structure comprises: a semiconductor layer being doped with a first impurity of a first conductivity type; a base region in the semiconductor layer, the base region being more heavily doped with the first impurity than the semiconductor layer and having a base contact (B, 222), a collector region in the semiconductor layer, the collector region being doped with a second impurity of a second conductivity type opposite the first type and having a collector contact and a very highly doped region doped with the second impurity and interposed between the collector region and the collector contact; and an emitter region (210, 210a) in the semiconductor layer, the emitter region (210, 210a) being formed by a very highly doped region doped with the second impurity and having an emitter contact, characterized in that the base region and base contact are not between the collector region and its contact and the emitter region and its contact, and the overvoltage protection device further comprises: a field plate (212, 202a) above a portion of the semiconductor layer between the collector region and the emitter region, wherein the field plate is electronically connected to the collector region, the emitter region, or the node to be protected. a semiconductor layer being doped with a first impurity of a first conductivity type; a base region in the semiconductor layer, the base region being more heavily doped with the first impurity than the semiconductor layer and having a base contact (B, 222), a collector region in the semiconductor layer, the collector region being doped with a second impurity of a second conductivity type opposite the first type and having a collector contact and a very highly doped region doped with the second impurity and interposed between the collector region and the collector contact; and an emitter region (210, 210a) in the semiconductor layer, the emitter region (210, 210a) being formed by a very highly doped region doped with the second impurity and having an emitter contact, characterized in that the base region and base contact are not between the collector region and its contact and the emitter region and its contact, and the overvoltage protection device further comprises: a field plate (212, 202a) above a portion of the semiconductor layer between the collector region and the emitter region, wherein the field plate is electronically connected to the collector region, the emitter region, or the node to be protected.
Safety switching device for safely switching off and/or switching on at least one electrical machine, comprising at least one printed circuit board having at least one control unit (μC) for controlling the electrical machine, the printed circuit board having electrical contacts (3a, 3b) and the control unit (μC) receiving and processing input signals from at least one signal transmitter via the electrical contacts and controlling the electrical machine, and a plug connector which can be plugged onto the printed circuit board for electrical connection to the contacts (3a, 3b), characterized in that the electrical contacts (3a, 3b) of the printed circuit board are partly assigned to a low voltage circuit of 12-volt or 24-volt and partly to a mains voltage circuit of 110-volt or 230-volt, the plug connector is provided with first connection sockets for connecting the at least one signal transmitter to the contacts of the low-voltage circuit of the printed circuit board and second connection sockets for connecting the electrical machine to the contacts of the mains voltage circuit of the printed circuit board, wherein an electrical connection between the electrical contacts (3a, 3b) of the printed circuit board and the first and second terminal sockets (E, A) is formed in such a manner that a minimum distance is provided between two oppositely arranged first and second connecting sockets (E and A), the minimum distance being many times greater than a first distance between respectively adjacent first connection sockets or between respectively adjacent second connection sockets.
An aryl-substituted anthracene compound having Formula I: wherein: R 1 through R 8 are the same or different at each occurrence and are selected from the group consisting of H, D, alkyl, alkoxy, aryl, aryloxy, diarylamino, siloxane, and silyl; Ar 1 and Ar 2 are the same or different and are selected from the group consisting of aryl groups; and Ar 3 and Ar 4 are the same or different and are selected from the group consisting of H, D, and aryl groups; characterised in that at least one of R 1 through R 8 is D. R 1 through R 8 are the same or different at each occurrence and are selected from the group consisting of H, D, alkyl, alkoxy, aryl, aryloxy, diarylamino, siloxane, and silyl; Ar 1 and Ar 2 are the same or different and are selected from the group consisting of aryl groups; and Ar 3 and Ar 4 are the same or different and are selected from the group consisting of H, D, and aryl groups; characterised in that at least one of R 1 through R 8 is D.