A magnetic field sensor (40, 50, 100, 200), comprising: a semiconductor substrate (22, 50, 208) having first and second parallel major surfaces; a plurality of vertical Hall elements (204a, 204b, 204c) arranged as a circular vertical Hall structure, wherein each one of the plurality of vertical Hall elements is arranged upon a common circular implant region in the first major surface of the semiconductor substrate (50, 208), wherein the plurality of vertical Hall elements is configured to generate a respective plurality of x-y output signals (104a, 104b) responsive to a magnetic field having a direction component in an x-y plane parallel to the first major surface of the semiconductor substrate, the x-y plane having an x-direction and a y-direction orthogonal to the x-direction; a processing circuit, coupled to receive a signal representative of the plurality of the plurality of x-y output signals (104a, 104b); characterized in that the sensor further comprises: a plurality of planar Hall elements (18, 34, 47) disposed upon the semiconductor substrate, wherein the plurality of planar Hall elements is arranged in a circular planar Hall structure, wherein each one of the plurality of planar Hall elements is arranged upon the common circular implant region (32, 42, 202) of the CVH structure or upon a separate common implant region of the CPH structure, wherein the plurality of planar Hall elements is configured to generate a plurality of z output signals (106a, 106b) responsive to a magnetic field having a direction component in a z direction orthogonal to the x-y plane; and wherein the processing circuit being disposed upon the semiconductor substrate, being coupled to receive a signal representative of the plurality of z output signals, being configured to generate one or more of an x-y angle signal representative of an angle of the direction component in the x-y-plane, or an x-y magnitude signal representative of a magnitude of the direction component in the x-y plane, and being configured to generate a z magnitude signal representative of a magnitude of the direction component in the z direction. a semiconductor substrate (22, 50, 208) having first and second parallel major surfaces; a plurality of vertical Hall elements (204a, 204b, 204c) arranged as a circular vertical Hall structure, wherein each one of the plurality of vertical Hall elements is arranged upon a common circular implant region in the first major surface of the semiconductor substrate (50, 208), wherein the plurality of vertical Hall elements is configured to generate a respective plurality of x-y output signals (104a, 104b) responsive to a magnetic field having a direction component in an x-y plane parallel to the first major surface of the semiconductor substrate, the x-y plane having an x-direction and a y-direction orthogonal to the x-direction; a processing circuit, coupled to receive a signal representative of the plurality of the plurality of x-y output signals (104a, 104b); characterized in that the sensor further comprises: a plurality of planar Hall elements (18, 34, 47) disposed upon the semiconductor substrate, wherein the plurality of planar Hall elements is arranged in a circular planar Hall structure, wherein each one of the plurality of planar Hall elements is arranged upon the common circular implant region (32, 42, 202) of the CVH structure or upon a separate common implant region of the CPH structure, wherein the plurality of planar Hall elements is configured to generate a plurality of z output signals (106a, 106b) responsive to a magnetic field having a direction component in a z direction orthogonal to the x-y plane; and wherein the processing circuit being disposed upon the semiconductor substrate, being coupled to receive a signal representative of the plurality of z output signals, being configured to generate one or more of an x-y angle signal representative of an angle of the direction component in the x-y-plane, or an x-y magnitude signal representative of a magnitude of the direction component in the x-y plane, and being configured to generate a z magnitude signal representative of a magnitude of the direction component in the z direction. a plurality of planar Hall elements (18, 34, 47) disposed upon the semiconductor substrate, wherein the plurality of planar Hall elements is arranged in a circular planar Hall structure, wherein each one of the plurality of planar Hall elements is arranged upon the common circular implant region (32, 42, 202) of the CVH structure or upon a separate common implant region of the CPH structure, wherein the plurality of planar Hall elements is configured to generate a plurality of z output signals (106a, 106b) responsive to a magnetic field having a direction component in a z direction orthogonal to the x-y plane; and wherein the processing circuit being disposed upon the semiconductor substrate, being coupled to receive a signal representative of the plurality of z output signals, being configured to generate one or more of an x-y angle signal representative of an angle of the direction component in the x-y-plane, or an x-y magnitude signal representative of a magnitude of the direction component in the x-y plane, and being configured to generate a z magnitude signal representative of a magnitude of the direction component in the z direction.