Method for packaging at least one semiconductor component comprising the following steps: covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; at least partially surrounding the at least one semiconductor component with an optically removable packaging material, wherein at least the sacrificial material on the at least one partial surface of the at least one semiconductor component is also surrounded with the packaging material; uncovering the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partly by forming at least one trench at least through the packaging material by means of a light beam, wherein at least the packaging material is optically removed regionally; and uncovering the at least one partial surface of the at least one semiconductor component at least partly by at least partly removing the previously uncovered sacrificial material by means of the chemical or physical removal method to which the packaging material has a higher resistance in comparison with the sacrificial material; wherein for covering the at least one partial surface with at least the chemically or physically dissoluble sacrificial material, a sacrificial material layer composed of the sacrificial material is deposited and a photopatternable layer composed of a photopatternable material is deposited on the sacrificial material layer and patterned, wherein the sacrificial material layer covered by the photopatternable layer is concomitantly patterned and the sacrificial material layer and the photopatternable layer are patterned such that there remain only residual regions (16b and 18b) composed of the sacrificial material and the photopatternable material which covers the at least one partial surface, wherein the patterned sacrificial material layer and the photopatterned layer on the at least one partial surface of the at least one semiconductor component are surrounded with the packaging material; and during the process of forming the at least one trench by means of the light beam, the at least one residual region composed of the photopatternable material is at least partly removed as well. covering at least one partial surface of the at least one semiconductor component with at least one chemically or physically dissoluble sacrificial material; at least partially surrounding the at least one semiconductor component with an optically removable packaging material, wherein at least the sacrificial material on the at least one partial surface of the at least one semiconductor component is also surrounded with the packaging material; uncovering the sacrificial material on the at least one partial surface of the at least one semiconductor component at least partly by forming at least one trench at least through the packaging material by means of a light beam, wherein at least the packaging material is optically removed regionally; and uncovering the at least one partial surface of the at least one semiconductor component at least partly by at least partly removing the previously uncovered sacrificial material by means of the chemical or physical removal method to which the packaging material has a higher resistance in comparison with the sacrificial material; wherein for covering the at least one partial surface with at least the chemically or physically dissoluble sacrificial material, a sacrificial material layer composed of the sacrificial material is deposited and a photopatternable layer composed of a photopatternable material is deposited on the sacrificial material layer and patterned, wherein the sacrificial material layer covered by the photopatternable layer is concomitantly patterned and the sacrificial material layer and the photopatternable layer are patterned such that there remain only residual regions (16b and 18b) composed of the sacrificial material and the photopatternable material which covers the at least one partial surface, wherein the patterned sacrificial material layer and the photopatterned layer on the at least one partial surface of the at least one semiconductor component are surrounded with the packaging material; and during the process of forming the at least one trench by means of the light beam, the at least one residual region composed of the photopatternable material is at least partly removed as well.