A light emitting device package, comprising: a substrate; a light emitting structure disposed on the substrate, the light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first bonding pad embedded in a through-hole and connected to the first conductivity type semiconductor layer, the through-hole passing through the active layer and the second conductivity type semiconductor layer to expose the first conductivity type semiconductor layer; a second bonding pad spaced apart from the first bonding pad and disposed on the second conductivity type semiconductor layer, the second bonding pad being connected to the second conductivity type semiconductor layer; a first insulation layer comprising: a first segment disposed on an inner side portion of the light emitting structure in the through-hole; and a second segment extending from the first segment in a first direction crossing a thickness direction of the light emitting structure and disposed on an inner lower edge of the light emitting structure; a first electrode connected to the first conductivity type semiconductor layer; a second electrode connected to the second conductivity type semiconductor layer extending from a first portion on the second conductivity type semiconductor layer to a second portion on the second segment; and a second insulation layer extending between the first insulation layer and the first bonding pad in the through-hole and on the second portion of the second electrode disposed on the second segment, characterised in that the second electrode comprises: a reflective layer disposed on the second conductivity type semiconductor layer; and a light-transmitting electrode layer disposed between the reflective layer and the second conductivity type semiconductor layer, wherein a width of the light-transmitting electrode layer is the same as a width of the reflecting layer, wherein the second segment of the first insulation layer is disposed between the light-transmitting electrode layer and the inner lower edge of the second conductivity type semiconductor layer so that at least a part of each of the light-transmitting electrode layer and the reflective layer is overlapped with the first insulation layer in the thickness direction. a substrate; a light emitting structure disposed on the substrate, the light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first bonding pad embedded in a through-hole and connected to the first conductivity type semiconductor layer, the through-hole passing through the active layer and the second conductivity type semiconductor layer to expose the first conductivity type semiconductor layer; a second bonding pad spaced apart from the first bonding pad and disposed on the second conductivity type semiconductor layer, the second bonding pad being connected to the second conductivity type semiconductor layer; a first insulation layer comprising: a first segment disposed on an inner side portion of the light emitting structure in the through-hole; and a second segment extending from the first segment in a first direction crossing a thickness direction of the light emitting structure and disposed on an inner lower edge of the light emitting structure; a first segment disposed on an inner side portion of the light emitting structure in the through-hole; and a second segment extending from the first segment in a first direction crossing a thickness direction of the light emitting structure and disposed on an inner lower edge of the light emitting structure; a first electrode connected to the first conductivity type semiconductor layer; a second electrode connected to the second conductivity type semiconductor layer extending from a first portion on the second conductivity type semiconductor layer to a second portion on the second segment; and a second insulation layer extending between the first insulation layer and the first bonding pad in the through-hole and on the second portion of the second electrode disposed on the second segment, characterised in that the second electrode comprises: a reflective layer disposed on the second conductivity type semiconductor layer; and a light-transmitting electrode layer disposed between the reflective layer and the second conductivity type semiconductor layer, a reflective layer disposed on the second conductivity type semiconductor layer; and a light-transmitting electrode layer disposed between the reflective layer and the second conductivity type semiconductor layer, wherein a width of the light-transmitting electrode layer is the same as a width of the reflecting layer, wherein the second segment of the first insulation layer is disposed between the light-transmitting electrode layer and the inner lower edge of the second conductivity type semiconductor layer so that at least a part of each of the light-transmitting electrode layer and the reflective layer is overlapped with the first insulation layer in the thickness direction.