A method for manufacturing an interdigitated back contact photovoltaic device 1 comprising a substrate defining a plane (X-Y) and, parallel to said plane (X-Y), a longitudinal (A-A) and a lateral (B-B) direction, orthogonal to said longitudinal direction (A-A) and comprising the steps (A-E) of: - Step A: providing a substrate of a first- or second type doping being an n-type or a p-type doping and having a front side and a back side and realizing on said back side a semiconducting structure defining a front surface to the side of said substrate and a back surface opposite to said front surface, the semiconducting structure comprising individual doped portions of said first type doping and a doped semiconducting structure (6") of a second-type, being of the other type than said first type, to provide alternating electrical charge-types of semiconducting contacts; - Step B: realizing a conductive layer on top of said doped semiconducting structures and (6"); - Step C: realizing a patterned isolation resist layer, having a back surface, onto said conductive layer, and so that the formed resist layer comprises resist parts and contact apertures and isolation apertures, and so that the patterns (14a, 14b, 14c) of the isolation resist layer are aligned relative to said semiconducting structures (6', 6"); - Step D: applying a plurality of conductive pads (16, 16') onto said isolation resist layer, and so that the conductive pads (16, 16') fill said contact apertures making electrical contact to said conductive layer, - Step E: etching of the conductive layer in areas specified by isolation apertures in the isolation resist layer and realize trenches, extending between said back surface to at most the back surface of said semiconducting structure, to form electrically separated first type charge collecting structures and second type charge collecting structures. - Step A: providing a substrate of a first- or second type doping being an n-type or a p-type doping and having a front side and a back side and realizing on said back side a semiconducting structure defining a front surface to the side of said substrate and a back surface opposite to said front surface, the semiconducting structure comprising individual doped portions of said first type doping and a doped semiconducting structure (6") of a second-type, being of the other type than said first type, to provide alternating electrical charge-types of semiconducting contacts; - Step B: realizing a conductive layer on top of said doped semiconducting structures and (6"); - Step C: realizing a patterned isolation resist layer, having a back surface, onto said conductive layer, and so that the formed resist layer comprises resist parts and contact apertures and isolation apertures, and so that the patterns (14a, 14b, 14c) of the isolation resist layer are aligned relative to said semiconducting structures (6', 6"); - Step D: applying a plurality of conductive pads (16, 16') onto said isolation resist layer, and so that the conductive pads (16, 16') fill said contact apertures making electrical contact to said conductive layer, - Step E: etching of the conductive layer in areas specified by isolation apertures in the isolation resist layer and realize trenches, extending between said back surface to at most the back surface of said semiconducting structure, to form electrically separated first type charge collecting structures and second type charge collecting structures.