A light emitting device comprising: a first metal layer; a second metal layer; a third metal layer between the first metal layer and the second metal layer; a first insulation film disposed on a top surfaces of the first and third metal layers (111 and 115) and having a width wider than a distance between the first and third metal layers (111 and 115); a second insulation film disposed on a top surfaces of the second and third metal layers (113 and 115) and having a width wider than a distance between the second and third metal layers (113 and 115); a light emitting chip disposed on the third metal layer and connected to the first and second metal layers (111,113) by wires (151, 152); a resin layer on the light emitting chip and is in contact with the first and second metal layers (111,113); a first separation part disposed between the first and third metal layers (111 and 115); a second separation part disposed between the second and third metal layers (113 and 115); and wherein the first metal layer includes a base part and a side part bent from the base part, and wherein the second metal layer includes a base part and a side part bent from the base part, wherein the first metal layer includes an outer part (111C,111D,111E) bent outward from the side part, and wherein the second metal layer includes an outer part (113C,113D,113E) bent outward from the side part, wherein the first and second insulation films extend up to the outer parts (111D,111E, 113D,113E) of the first and second metal layers (111,113), wherein the light emitting device has a cavity formed by the first, second and third metal layers (111,113,115), and wherein the light emitting chip is disposed inside the cavity, wherein the second insulation film is connected to the first insulation film. a first metal layer; a second metal layer; a third metal layer between the first metal layer and the second metal layer; a first insulation film disposed on a top surfaces of the first and third metal layers (111 and 115) and having a width wider than a distance between the first and third metal layers (111 and 115); a second insulation film disposed on a top surfaces of the second and third metal layers (113 and 115) and having a width wider than a distance between the second and third metal layers (113 and 115); a light emitting chip disposed on the third metal layer and connected to the first and second metal layers (111,113) by wires (151, 152); a resin layer on the light emitting chip and is in contact with the first and second metal layers (111,113); a first separation part disposed between the first and third metal layers (111 and 115); a second separation part disposed between the second and third metal layers (113 and 115); and wherein the first metal layer includes a base part and a side part bent from the base part, and wherein the second metal layer includes a base part and a side part bent from the base part, wherein the first metal layer includes an outer part (111C,111D,111E) bent outward from the side part, and wherein the second metal layer includes an outer part (113C,113D,113E) bent outward from the side part, wherein the first and second insulation films extend up to the outer parts (111D,111E, 113D,113E) of the first and second metal layers (111,113), wherein the light emitting device has a cavity formed by the first, second and third metal layers (111,113,115), and wherein the light emitting chip is disposed inside the cavity, wherein the second insulation film is connected to the first insulation film.