Rectifier for a sensor of electromagnetic signal, said electromagnetic signal having a frequency between 300Ghz and 10THz, said rectifier comprising: - a semiconductor substrate doped p/n comprising a electrons/holes gathering well for gathering electrons/holes; said electrons/holes gathering well being arranged inside said semiconductor substrate and comprising at least a first zone doped n/p; said first zone doped n/p having an end surface; - a metal end surface of an antenna, said antenna being capable of receiving and concentrating said electromagnetic signal; - a layer doped p/n having a first surface and a second surface, opposite to said first surface; wherein: a first portion of said first surface of said layer doped p/n is in contact with said end surface of said first zone doped n/p of the electrons/holes gathering well, so as to form a first metallurgical junction, and a first portion of said second surface of said layer doped p/n is in contact with said metal end surface, so as to form a second metallurgical junction; where the concentration of the doping of said layer doped p/n and the concentration of the doping of said first zone doped n/p of said electrons/holes gathering well are such that said first metallurgical junction has a first potential barrier (V Z1) inside and the work function of the metal of said metal end surface is selected such that it is equal to that of a semiconductor doped n/p and such that said second metallurgical junction has a second potential barrier (V Z2) inside; in that said first metallurgical junction and said second metallurgical junction form a double metallurgical junction n-p-n/p-n-p with a double potential barrier composed of said first potential barrier (V Z1) and said second potential barrier (V Z2), where said double metallurgical junction n-p-n/p-n-p comprises a first depletion zone, and a second depletion zone, in contact with said first depletion zone along a line of contact, disposed within said layer doped p/n, said first depletion zone having a thickness greater than the thickness of the second depletion zone; said first potential barrier (V Z1) being associated with said first depletion zone, and said second potential barrier (V Z2) being associated with said second depletion zone; in that said layer doped p/n is dimensioned in such a way that said double potential barrier has a value such as to allow said layer doped p/n being completely deprived of holes/electrons, so that, when a variable electric field is induced by said electromagnetic signal received by said antenna, said double metallurgical junction n-p-n/p-n-p is subjected to said variable electric field, and a first potential difference (ΔV Z1) and a second potential difference (ΔV Z2) are generated, through the first depletion zone and through the second depletion zone respectively, where each potential difference (ΔV Z1, ΔV Z2) is proportional to the thickness of the respective depletion zone (Z1, Z2) and is added algebraically to the respective potential barrier (V Z1, V Z2) so that when said first potential difference (ΔV Z1) is negative/positive, the first potential barrier (V Z1) is reduced in absolute value of a value equal to the first potential difference (ΔV Z1) and a first amount of electrons/holes moves in a first direction, from the first zone doped n/p of the electrons/holes gathering well to the meta! end surface, and when said second potential difference (ΔV Z2) is positive/negative, the second potential barrier (V Z2) is reduced in absolute value by a value equal to the second potential difference (ΔV Z2) and a second amount of electrons/holes moves in a second direction, opposite the first direction, from the metal end surface to the first zone doped n/p of the electrons/holes gathering well; the work function of the metal of said metal end surface and the concentrations of the doping of said layer doped p/n and of said first zone doped n/p being such that said depletion zones (Z1, Z2) are deformed asymmetrically and that said first amount of electrons/holes is different from said second amount of electrons/holes, so as to generate a continuous electric current induced by said electromagnetic signal received by said antenna. - a semiconductor substrate doped p/n comprising a electrons/holes gathering well for gathering electrons/holes; said electrons/holes gathering well being arranged inside said semiconductor substrate and comprising at least a first zone doped n/p; said first zone doped n/p having an end surface; - a metal end surface of an antenna, said antenna being capable of receiving and concentrating said electromagnetic signal; - a layer doped p/n having a first surface and a second surface, opposite to said first surface; wherein: a first portion of said first surface of said layer doped p/n is in contact with said end surface of said first zone doped n/p of the electrons/holes gathering well, so as to form a first metallurgical junction, and a first portion of said second surface of said layer doped p/n is in contact with said metal end surface, so as to form a second metallurgical junction; a first portion of said first surface of said layer doped p/n is in contact with said end surface of said first zone doped n/p of the electrons/holes gathering well, so as to form a first metallurgical junction, and a first portion of said second surface of said layer doped p/n is in contact with said metal end surface, so as to form a second metallurgical junction;