A method for forming a semiconductor structure, the method comprising: forming a set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312) on a silicon carbide substrate (100, 900), wherein the silicon carbide substrate (100, 900) includes a doped layer (106, 904, 1302) and a silicon carbide device layer (800, 906) and wherein the doped layer (106, 904, 1302) has a doping level such that the doped layer (106, 904, 1302) is etched using a photo-electrochemical etching process while the silicon carbide substrate (100, 900) remains unetched; forming a first oxide layer (402, 912) on the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312), wherein the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312) is located between the first oxide layer (402, 912) and the silicon carbide substrate (100, 900); bonding the first oxide layer (402, 912) to a second oxide layer (502, 1002) on a carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) to form an oxide layer (600, 1100, 1312, 1604, 1804, 2004, 2104, 2204, 2304) located between the carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312); grinding the silicon carbide substrate (100, 900); stopping the grinding when a part of the doped layer (106, 904, 1302) in the silicon carbide substrate (100, 900) is reached; etching the silicon carbide substrate (100, 900) using the photo-electrochemical etching process such that the doped layer (106, 904, 1302) is removed and the silicon carbide device layer (800, 906) in the silicon carbide substrate (100, 900) remains when the part of the doped layer (106, 904, 1302) in the silicon carbide substrate (100, 900) is exposed; and forming the semiconductor structure using the silicon carbide device layer (800, 906) and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312). forming a set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312) on a silicon carbide substrate (100, 900), wherein the silicon carbide substrate (100, 900) includes a doped layer (106, 904, 1302) and a silicon carbide device layer (800, 906) and wherein the doped layer (106, 904, 1302) has a doping level such that the doped layer (106, 904, 1302) is etched using a photo-electrochemical etching process while the silicon carbide substrate (100, 900) remains unetched; forming a first oxide layer (402, 912) on the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312), wherein the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312) is located between the first oxide layer (402, 912) and the silicon carbide substrate (100, 900); bonding the first oxide layer (402, 912) to a second oxide layer (502, 1002) on a carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) to form an oxide layer (600, 1100, 1312, 1604, 1804, 2004, 2104, 2204, 2304) located between the carrier substrate (500, 1000, 1314, 1602, 1802, 2002, 2102, 2202, 2302, 2402) and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312); grinding the silicon carbide substrate (100, 900); stopping the grinding when a part of the doped layer (106, 904, 1302) in the silicon carbide substrate (100, 900) is reached; etching the silicon carbide substrate (100, 900) using the photo-electrochemical etching process such that the doped layer (106, 904, 1302) is removed and the silicon carbide device layer (800, 906) in the silicon carbide substrate (100, 900) remains when the part of the doped layer (106, 904, 1302) in the silicon carbide substrate (100, 900) is exposed; and forming the semiconductor structure using the silicon carbide device layer (800, 906) and the set of group III nitride layers (200, 908, 910, 1308, 1310, 1606, 1806, 2006, 2106, 2210, 2212, 2310, 2312).