A method comprising: providing a dielectric substrate (208, 308, 408); forming a first resist layer (210, 310, 410) on the dielectric substrate; forming a second resist layer (212, 312, 412) on the first resist layer; and forming a third resist layer (214, 314, 414) on the second resist layer, wherein the first resist layer comprises a first opening (216, 316, 416) extending through a thickness of the first resist layer, the second resist layer comprises a second opening (218, 318, 418) aligned over the first opening and extending through a thickness of the second resist layer, and the third resist layer comprises a third opening (220, 320, 420) aligned over the second opening and extending through a thickness of the third resist layer; the method further comprising: depositing a first layer of material (248, 448) through the first opening, the second opening, and the third opening at a first deposition angle (250, 350) with respect to the substrate (208, 308, 408); and depositing a second layer of material (258, 358, 458) through the first opening, the second opening, and the third opening at a second deposition angle with respect to the substrate (208, 308, 408), wherein an orientation between the substrate and a material deposition source is altered from a first position for the first layer deposition to a second position for the second layer deposition, wherein a thickness (211, 311, 411; 213, 313, 413; 215, 315, 415) of each of the first opening, the second opening and the third opening extend along a first direction normal to a surface of the dielectric substrate, each of the first opening, the second opening, and the third opening has a corresponding width (222, 224, 226; 322, 324, 326; 422, 424, 426) that extends along a second direction that is orthogonal to the first direction, and the width (224, 324, 424) of the second opening is less than the width (222, 322, 422) of the first opening and less than the width (226, 326, 426) of the third opening. providing a dielectric substrate (208, 308, 408); forming a first resist layer (210, 310, 410) on the dielectric substrate; forming a second resist layer (212, 312, 412) on the first resist layer; and forming a third resist layer (214, 314, 414) on the second resist layer, wherein the first resist layer comprises a first opening (216, 316, 416) extending through a thickness of the first resist layer, the second resist layer comprises a second opening (218, 318, 418) aligned over the first opening and extending through a thickness of the second resist layer, and the third resist layer comprises a third opening (220, 320, 420) aligned over the second opening and extending through a thickness of the third resist layer; the method further comprising: depositing a first layer of material (248, 448) through the first opening, the second opening, and the third opening at a first deposition angle (250, 350) with respect to the substrate (208, 308, 408); and depositing a second layer of material (258, 358, 458) through the first opening, the second opening, and the third opening at a second deposition angle with respect to the substrate (208, 308, 408), wherein an orientation between the substrate and a material deposition source is altered from a first position for the first layer deposition to a second position for the second layer deposition, wherein a thickness (211, 311, 411; 213, 313, 413; 215, 315, 415) of each of the first opening, the second opening and the third opening extend along a first direction normal to a surface of the dielectric substrate, each of the first opening, the second opening, and the third opening has a corresponding width (222, 224, 226; 322, 324, 326; 422, 424, 426) that extends along a second direction that is orthogonal to the first direction, and the width (224, 324, 424) of the second opening is less than the width (222, 322, 422) of the first opening and less than the width (226, 326, 426) of the third opening. depositing a first layer of material (248, 448) through the first opening, the second opening, and the third opening at a first deposition angle (250, 350) with respect to the substrate (208, 308, 408); and depositing a second layer of material (258, 358, 458) through the first opening, the second opening, and the third opening at a second deposition angle with respect to the substrate (208, 308, 408), wherein an orientation between the substrate and a material deposition source is altered from a first position for the first layer deposition to a second position for the second layer deposition, wherein a thickness (211, 311, 411; 213, 313, 413; 215, 315, 415) of each of the first opening, the second opening and the third opening extend along a first direction normal to a surface of the dielectric substrate, each of the first opening, the second opening, and the third opening has a corresponding width (222, 224, 226; 322, 324, 326; 422, 424, 426) that extends along a second direction that is orthogonal to the first direction, and the width (224, 324, 424) of the second opening is less than the width (222, 322, 422) of the first opening and less than the width (226, 326, 426) of the third opening.