Optoelectronic component comprising - a carrier, having a first main area, - at least two presorted, substrateless optoelectronic semiconductor chips of identical type which are fixed to the first main area of the carrier, wherein optoelectronic semiconductor chips of identical type emit electromagnetic radiation having the same intensity and the same wavelength with a tolerance of at most 10 % with the same energization, - at least one conversion element which covers the optoelectronic semiconductor chips of identical type at their side remote from the first main area, and - a contact metallization (3a, 3b), wherein - the carrier is electrically insulated, - the carrier has at least one opening extending from the first main area through the carrier to an opposite second main area, wherein - the opening is filled with an electrically conductive material at least in places, - the electrically conductive material is electrically conductively connected to the contact metallization (3a, 3b), and - the electrically conductive material of at least one opening is free of the carrier in a lateral direction, - the optoelectronic semiconductor chips are fixed to the first main area of the carrier by means of a connecting material, in particular a solder material, - the contact metallization (3a, 3b) covers at least one region of the first main area which is free of the optoelectronic semiconductor chip, - the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chips, and - the at least two optoelectronic semiconductor chips are surface-mountable semiconductor chips which comprise plated-through holes, wherein the plated-through holes penetrate through p-doped layers and an active zone and the semiconductor chips are contact-connected on the n-side by the plated-through holes or the plated-through holes penetrate through n-doped layers and the active zone and the semiconductor chips are contact-connected on the p-side by the plated-through holes. - a carrier, having a first main area, - at least two presorted, substrateless optoelectronic semiconductor chips of identical type which are fixed to the first main area of the carrier, wherein optoelectronic semiconductor chips of identical type emit electromagnetic radiation having the same intensity and the same wavelength with a tolerance of at most 10 % with the same energization, - at least one conversion element which covers the optoelectronic semiconductor chips of identical type at their side remote from the first main area, and - a contact metallization (3a, 3b), wherein - the carrier is electrically insulated, - the carrier has at least one opening extending from the first main area through the carrier to an opposite second main area, wherein - the opening is filled with an electrically conductive material at least in places, - the electrically conductive material is electrically conductively connected to the contact metallization (3a, 3b), and - the electrically conductive material of at least one opening is free of the carrier in a lateral direction, - the optoelectronic semiconductor chips are fixed to the first main area of the carrier by means of a connecting material, in particular a solder material, - the contact metallization (3a, 3b) covers at least one region of the first main area which is free of the optoelectronic semiconductor chip, - the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chips, and - the at least two optoelectronic semiconductor chips are surface-mountable semiconductor chips which comprise plated-through holes, wherein the plated-through holes penetrate through p-doped layers and an active zone and the semiconductor chips are contact-connected on the n-side by the plated-through holes or the plated-through holes penetrate through n-doped layers and the active zone and the semiconductor chips are contact-connected on the p-side by the plated-through holes.