Method of operating a photosensitive sensor for capturing images of a scene, the sensor comprising an array of interconnected photosensitive cells, arranged in a number of columns (A, B, C) and rows, each photosensitive cell comprising: - a CCD shift register comprising a plurality of register elements, the CCD shift register being configured to convert incoming light into charge, collecting the charge and transporting the collected charge towards a CMOS readout circuit or to the register elements of an adjacent photosensitive cell; - a CMOS readout circuit configured to read out the CCD shift register by receiving the charges transported by each of the register elements of the CCD register and to convert the charges into a voltage or current photosensitive cell signal; the method comprising operating the CCD shift registers and CMOS readout circuits for: - converting light and collecting charge in the shift registers of a first column of photosensitive cells during a first integration time interval; - reading out the CCD shift registers of the first column of photosensitive cells after the first integration time interval to provide a first photosensitive cell signal based on the charges collected in the first integration time interval; - converting light and collecting charge in the shift registers of a second column of photosensitive cells during a second integration time interval after the first integration time interval; - transferring the charge collected at the shift registers of the second column of photosensitive cells after the second integration time interval towards the shift registers of a further column of photosensitive cells; - converting light and collecting charge in the shift registers of the further column of photosensitive cells during a further integration time interval; - reading out the CCD shift registers of the further column of photosensitive cells after the further integration time interval to provide a further photosensitive cell signal based on the charges collected in the second and further integration time intervals. - a CCD shift register comprising a plurality of register elements, the CCD shift register being configured to convert incoming light into charge, collecting the charge and transporting the collected charge towards a CMOS readout circuit or to the register elements of an adjacent photosensitive cell; - a CMOS readout circuit configured to read out the CCD shift register by receiving the charges transported by each of the register elements of the CCD register and to convert the charges into a voltage or current photosensitive cell signal; - converting light and collecting charge in the shift registers of a first column of photosensitive cells during a first integration time interval; - reading out the CCD shift registers of the first column of photosensitive cells after the first integration time interval to provide a first photosensitive cell signal based on the charges collected in the first integration time interval; - converting light and collecting charge in the shift registers of a second column of photosensitive cells during a second integration time interval after the first integration time interval; - transferring the charge collected at the shift registers of the second column of photosensitive cells after the second integration time interval towards the shift registers of a further column of photosensitive cells; - converting light and collecting charge in the shift registers of the further column of photosensitive cells during a further integration time interval; - reading out the CCD shift registers of the further column of photosensitive cells after the further integration time interval to provide a further photosensitive cell signal based on the charges collected in the second and further integration time intervals.