A pressure sensor comprising: a housing comprising an input port configured to allow a media to enter the interior of the housing when the housing is placed in an environment containing the media; a support mounted within the housing, the support defining a first aperture having a uniform cross section extending through the support, and wherein the support is composed of an insulating material having a coefficient of thermal expansion similar to silicon; a stress isolation member mounted within the first aperture of the support, the stress isolation member having a rectangular cuboid shape and defining a second aperture extending longitudinally through the rectangular cuboid shape, wherein the stress isolation member is composed of silicon, and wherein the cross-section of the first aperture matches an outer cross section of the stress isolation member; and a sensor die bonded to the stress isolation member, the sensor die including: a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side; and wherein the second side of the silicon substrate is bonded to a first surface of the stress isolation member to form a silicon to silicon bond between the sensor die and the stress isolation member, wherein the stress isolation member extends away from the second side of the silicon substrate, the sensor die being mounted to a first end of the stress isolation member, wherein the support is mounted proximate a second end of the stress isolation member, wherein the second end is reverse of the first end. a housing comprising an input port configured to allow a media to enter the interior of the housing when the housing is placed in an environment containing the media; a support mounted within the housing, the support defining a first aperture having a uniform cross section extending through the support, and wherein the support is composed of an insulating material having a coefficient of thermal expansion similar to silicon; a stress isolation member mounted within the first aperture of the support, the stress isolation member having a rectangular cuboid shape and defining a second aperture extending longitudinally through the rectangular cuboid shape, wherein the stress isolation member is composed of silicon, and wherein the cross-section of the first aperture matches an outer cross section of the stress isolation member; and a sensor die bonded to the stress isolation member, the sensor die including: a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side; and wherein the second side of the silicon substrate is bonded to a first surface of the stress isolation member to form a silicon to silicon bond between the sensor die and the stress isolation member, wherein the stress isolation member extends away from the second side of the silicon substrate, the sensor die being mounted to a first end of the stress isolation member, wherein the support is mounted proximate a second end of the stress isolation member, wherein the second end is reverse of the first end. a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side; and wherein the second side of the silicon substrate is bonded to a first surface of the stress isolation member to form a silicon to silicon bond between the sensor die and the stress isolation member, wherein the stress isolation member extends away from the second side of the silicon substrate, the sensor die being mounted to a first end of the stress isolation member, wherein the support is mounted proximate a second end of the stress isolation member, wherein the second end is reverse of the first end.