A method of making a nozzle chip with a first nozzle group and a second nozzle group having a connection portion therebetween and forming a nozzle row pattern, the method comprising: forming the nozzle row pattern on the nozzle chip through fractionated exposure by steps of performing irradiation of the nozzle chip with light rays using a mask, wherein the mask comprises orifice portions (285, 286, 288, 289) configured to mask portions of the nozzle chip in which nozzles are to be formed with the irradiation, wherein the orifice portions form rows that are arranged in a first and a second orifice row pattern (271, 272) that corresponds to the first nozzle group and the second nozzle group, respectively, wherein each of the first and the second orifice row patterns has a specific portion (281, 282), respectively, and wherein in a first step of performing the irradiation using the mask, the nozzle chip is irradiated using the first orifice row pattern such that the specific portion of the first orifice row pattern is made to correspond to the connection portion of the nozzle chip, and in a second step of performing the irradiation using the mask, the nozzle chip is irradiated using the second orifice row pattern such that the specific portion of the second orifice row pattern is made to correspond to the connection portion of the nozzle chip; characterized in that the mask is configured such that the specific portions of the orifice row patterns are divided so that they are not connected to each other, and such that the rows formed by the orifice portions of the orifice row patterns are not aligned in a longitudinal direction along which the orifice portions (288, 289) of the orifice row patterns are arranged to form said rows; and the irradiation is performed for each of the orifice row patterns of the mask such that, with respect to the longitudinal direction, the absolute value of off-axis telecentricity (Tab, Tbb) of an orifice portion of the irradiated orifice row pattern that is at the smallest distance from the specific portion of that orifice row pattern is smaller than the absolute value of off-axis telecentricity (Tat, Tbt) of an orifice portion of that orifice row pattern that is at the largest distance from the specific portion of that orifice row pattern, wherein off-axis telecentricity of an orifice portion of the mask refers to an inclination (φ), with respect to a direction perpendicular to the mask, of a light ray with which the orifice portion is irradiated. forming the nozzle row pattern on the nozzle chip through fractionated exposure by steps of performing irradiation of the nozzle chip with light rays using a mask, wherein the mask comprises orifice portions (285, 286, 288, 289) configured to mask portions of the nozzle chip in which nozzles are to be formed with the irradiation, wherein the orifice portions form rows that are arranged in a first and a second orifice row pattern (271, 272) that corresponds to the first nozzle group and the second nozzle group, respectively, wherein each of the first and the second orifice row patterns has a specific portion (281, 282), respectively, and wherein in a first step of performing the irradiation using the mask, the nozzle chip is irradiated using the first orifice row pattern such that the specific portion of the first orifice row pattern is made to correspond to the connection portion of the nozzle chip, and in a second step of performing the irradiation using the mask, the nozzle chip is irradiated using the second orifice row pattern such that the specific portion of the second orifice row pattern is made to correspond to the connection portion of the nozzle chip; characterized in that the mask is configured such that the specific portions of the orifice row patterns are divided so that they are not connected to each other, and such that the rows formed by the orifice portions of the orifice row patterns are not aligned in a longitudinal direction along which the orifice portions (288, 289) of the orifice row patterns are arranged to form said rows; and the irradiation is performed for each of the orifice row patterns of the mask such that, with respect to the longitudinal direction, the absolute value of off-axis telecentricity (Tab, Tbb) of an orifice portion of the irradiated orifice row pattern that is at the smallest distance from the specific portion of that orifice row pattern is smaller than the absolute value of off-axis telecentricity (Tat, Tbt) of an orifice portion of that orifice row pattern that is at the largest distance from the specific portion of that orifice row pattern, wherein off-axis telecentricity of an orifice portion of the mask refers to an inclination (φ), with respect to a direction perpendicular to the mask, of a light ray with which the orifice portion is irradiated.