A method for manufacturing a device for ejecting a fluid, comprising the steps of: providing a first wafer of semiconductor material; processing a second wafer, including the steps of: forming a first mask layer; forming a first structural layer of semiconductor material on the first mask layer; forming a second mask layer having at least an aperture through which a respective region of the second mask layer is exposed; forming a second structural layer of semiconductor material on the second mask layer; and forming, on the second structural layer, a third mask layer having an aperture through which a respective region of the second structural layer is exposed; wherein the first, the second and the third mask layers (29a, 29b, 35) are of a respective material that can be selectively removed with respect to the semiconductor material of the first and the second structural layers (4a, 4b); forming, at a first side of the first wafer, a piezoelectric actuator and an outlet channel for said fluid laterally to the piezoelectric actuator; forming a recess in the second structural layer by etching the second wafer at the third mask layer to remove selective portions of the second structural layer exposed through the aperture of the third mask layer; forming an inlet channel in direct fluidic connection with said recess by continuing said etching of the second wafer to remove selective portions of the first structural layer exposed through said aperture of the second mask layer; coupling the first and the second wafers (2, 4) together so that the piezoelectric actuator and the outlet channel directly face, and are completely contained in, the recess, said recess forming a reservoir of said fluid within the fluid ejection device; coupling a dry-film at a second side, opposite to the first side, of the first wafer; and forming an ejection nozzle, at least partially aligned to the outlet channel, through said dry-film, so that the ejection nozzle is in fluidic connection with said reservoir through said outlet channel. providing a first wafer of semiconductor material; processing a second wafer, including the steps of: forming a first mask layer; forming a first structural layer of semiconductor material on the first mask layer; forming a second mask layer having at least an aperture through which a respective region of the second mask layer is exposed; forming a second structural layer of semiconductor material on the second mask layer; and forming, on the second structural layer, a third mask layer having an aperture through which a respective region of the second structural layer is exposed; wherein the first, the second and the third mask layers (29a, 29b, 35) are of a respective material that can be selectively removed with respect to the semiconductor material of the first and the second structural layers (4a, 4b); forming, at a first side of the first wafer, a piezoelectric actuator and an outlet channel for said fluid laterally to the piezoelectric actuator; forming a recess in the second structural layer by etching the second wafer at the third mask layer to remove selective portions of the second structural layer exposed through the aperture of the third mask layer; forming an inlet channel in direct fluidic connection with said recess by continuing said etching of the second wafer to remove selective portions of the first structural layer exposed through said aperture of the second mask layer; coupling the first and the second wafers (2, 4) together so that the piezoelectric actuator and the outlet channel directly face, and are completely contained in, the recess, said recess forming a reservoir of said fluid within the fluid ejection device; coupling a dry-film at a second side, opposite to the first side, of the first wafer; and forming an ejection nozzle, at least partially aligned to the outlet channel, through said dry-film, so that the ejection nozzle is in fluidic connection with said reservoir through said outlet channel.