A gamma-ray detector (300; 400), comprising: a plurality of detector wafers arranged in a stacked configuration such that when an incident gamma-ray passes through a first detector wafer (302-308; 402-408) of said plurality of detector wafers said gamma-ray encounters a second detector wafer (302-308; 402-408) of said plurality of detector wafers, wherein each of said plurality of detector wafers includes at least one anode separated from a cathode via a detector wafer material; at least one processing device configured to detect the presence of electron-hole pairs generated by the interaction of said incident gamma-ray with at least a portion of said plurality of detector wafers, and to generate an electrical pulse based on the electron-hole pairs detected in at least the first detector wafer and in the second detector wafer, wherein each of said plurality of detector wafers includes a wafer interface comprising at least one unit cell electrically connected to said at least one anode, said at least one unit cell being further electrically connected with said at least one processing device, wherein said plurality of detector wafers include a first detector wafer having a first cathode and a first wafer interface, a second detector wafer having a second cathode and a second wafer interface, a third detector wafer having a third cathode and a third wafer interface and a fourth detector wafer having a fourth cathode and a fourth wafer interface, characterized in that said plurality of detector wafers are arranged in said stacked configuration such that said first cathode is adjacent said second cathode, said third cathode is adjacent said fourth cathode and said second wafer interface is adjacent said third wafer interface. a plurality of detector wafers arranged in a stacked configuration such that when an incident gamma-ray passes through a first detector wafer (302-308; 402-408) of said plurality of detector wafers said gamma-ray encounters a second detector wafer (302-308; 402-408) of said plurality of detector wafers, wherein each of said plurality of detector wafers includes at least one anode separated from a cathode via a detector wafer material; at least one processing device configured to detect the presence of electron-hole pairs generated by the interaction of said incident gamma-ray with at least a portion of said plurality of detector wafers, and to generate an electrical pulse based on the electron-hole pairs detected in at least the first detector wafer and in the second detector wafer, wherein each of said plurality of detector wafers includes a wafer interface comprising at least one unit cell electrically connected to said at least one anode, said at least one unit cell being further electrically connected with said at least one processing device, wherein said plurality of detector wafers include a first detector wafer having a first cathode and a first wafer interface, a second detector wafer having a second cathode and a second wafer interface, a third detector wafer having a third cathode and a third wafer interface and a fourth detector wafer having a fourth cathode and a fourth wafer interface, characterized in that said plurality of detector wafers are arranged in said stacked configuration such that said first cathode is adjacent said second cathode, said third cathode is adjacent said fourth cathode and said second wafer interface is adjacent said third wafer interface.