A light emitting diode comprising: a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; an ohmic layer formed under the second conductivity type semiconductor layer of the light emitting structure; a current blocking layer formed between the ohmic layer and the light emitting structure; a reflective layer formed under the light emitting structure; a transparent supporting layer formed between the light emitting structure and the reflective layer, a protective layer formed under the light emitting structure, wherein the reflective layer comprises at least one projection part projecting toward the light emitting structure and contacting the ohmic layer and wherein side surfaces of the projection part of the reflective layer are in contact with the transparent supporting layer, wherein the transparent supporting layer is formed under the ohmic layer and the protective layer, not under the current blocking layer, and contacts the ohmic layer, and a light extraction structure is formed in a side surface of the transparent supporting layer and, wherein the projection part of the reflective layer is vertically overlapped with the current blocking layer, wherein the ohmic layer includes a concave part and a convex part; and the projection part of the reflective layer vertically overlaps with the convex part of the ohmic layer and a top surface of the projection part of the reflective layer contacts a bottom surface of the convex part of the ohmic layer; and the transparent supporting layer includes a protrusion part vertically overlapping with the concave part of the ohmic layer and contacts the concave part of the ohmic layer. a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; an ohmic layer formed under the second conductivity type semiconductor layer of the light emitting structure; a current blocking layer formed between the ohmic layer and the light emitting structure; a reflective layer formed under the light emitting structure; a transparent supporting layer formed between the light emitting structure and the reflective layer, a protective layer formed under the light emitting structure, wherein the reflective layer comprises at least one projection part projecting toward the light emitting structure and contacting the ohmic layer and wherein side surfaces of the projection part of the reflective layer are in contact with the transparent supporting layer, wherein the transparent supporting layer is formed under the ohmic layer and the protective layer, not under the current blocking layer, and contacts the ohmic layer, and a light extraction structure is formed in a side surface of the transparent supporting layer and, wherein the projection part of the reflective layer is vertically overlapped with the current blocking layer, wherein the ohmic layer includes a concave part and a convex part; and the projection part of the reflective layer vertically overlaps with the convex part of the ohmic layer and a top surface of the projection part of the reflective layer contacts a bottom surface of the convex part of the ohmic layer; and the transparent supporting layer includes a protrusion part vertically overlapping with the concave part of the ohmic layer and contacts the concave part of the ohmic layer.