A method of manufacturing a multi-die semiconductor device, the method comprising: providing a metallic leadframe including a die pad and a set of electrically-conductive leads arranged around the die pad, arranging a set of semiconductor dice (12, 14) onto said die pad, said set of semiconductor dice including at least a first semiconductor die and a second semiconductor die, wherein the first semiconductor die and the second semiconductor die comprise respective sets of bonding pads at their front surfaces opposed to the die pad, forming a layer of laser-activatable material onto said first semiconductor die, said second semiconductor die and said set of electrically-conductive leads, directing laser radiation onto said layer of laser-activatable material to pattern a set of laser-activated lines, wherein said set of laser-activated lines includes: i) a first subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die and/or said second semiconductor die to selected electrically-conductive leads in said set of electrically-conductive leads, ii) a second subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die to selected bonding pads of said second semiconductor die, and iii) a third subset of laser-activated lines configured to couple each of said laser-activated lines in said second subset of laser-activated lines to at least one laser-activated line in said first subset of laser-activated lines, and/or to at least one electrically-conductive lead in said set of electrically-conductive leads, depositing a first metallic layer onto said first, second and third subsets of laser-activated lines to provide respective first, second and third subsets of electrically-conductive lines, selectively depositing a second metallic layer onto said first and second subsets of electrically-conductive lines by means of electroplating to provide respective first (16C', 16C) and second (16B', 16B) subsets of electrically-conductive tracks, and selectively removing said electrically-conductive lines in said third subset of electrically-conductive lines. providing a metallic leadframe including a die pad and a set of electrically-conductive leads arranged around the die pad, arranging a set of semiconductor dice (12, 14) onto said die pad, said set of semiconductor dice including at least a first semiconductor die and a second semiconductor die, wherein the first semiconductor die and the second semiconductor die comprise respective sets of bonding pads at their front surfaces opposed to the die pad, forming a layer of laser-activatable material onto said first semiconductor die, said second semiconductor die and said set of electrically-conductive leads, directing laser radiation onto said layer of laser-activatable material to pattern a set of laser-activated lines, wherein said set of laser-activated lines includes: i) a first subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die and/or said second semiconductor die to selected electrically-conductive leads in said set of electrically-conductive leads, ii) a second subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die to selected bonding pads of said second semiconductor die, and iii) a third subset of laser-activated lines configured to couple each of said laser-activated lines in said second subset of laser-activated lines to at least one laser-activated line in said first subset of laser-activated lines, and/or to at least one electrically-conductive lead in said set of electrically-conductive leads, i) a first subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die and/or said second semiconductor die to selected electrically-conductive leads in said set of electrically-conductive leads, ii) a second subset of laser-activated lines configured to couple selected bonding pads of said first semiconductor die to selected bonding pads of said second semiconductor die, and iii) a third subset of laser-activated lines configured to couple each of said laser-activated lines in said second subset of laser-activated lines to at least one laser-activated line in said first subset of laser-activated lines, and/or to at least one electrically-conductive lead in said set of electrically-conductive leads, depositing a first metallic layer onto said first, second and third subsets of laser-activated lines to provide respective first, second and third subsets of electrically-conductive lines, selectively depositing a second metallic layer onto said first and second subsets of electrically-conductive lines by means of electroplating to provide respective first (16C', 16C) and second (16B', 16B) subsets of electrically-conductive tracks, and selectively removing said electrically-conductive lines in said third subset of electrically-conductive lines.