A method of forming an insulated metal substrate for a power electronic device, comprising: partially etching a first surface of a copper layer to form a pattern comprising a first thickness and a second thickness greater than the first thickness, the first thickness and the second thickness both measured perpendicular to a second surface of the copper layer opposite the first surface of the copper layer, the partial etching being made using photoresist; after removing the photoresist, laminating the first surface of the copper layer with a second surface of a dielectric layer, the dielectric layer coupled to a metallic baseplate at a first surface of the dielectric layer opposite the second surface of the dielectric layer and at a second surface of the metallic baseplate; and forming traces in the copper layer by etching through the copper layer at the first thickness and etching through the copper layer at the second thickness, wherein the traces comprise two different trace thicknesses, where the trace thicknesses are measured perpendicularly to the first surface of the dielectric layer, wherein etching through the copper layer at the first thickness and etching through the copper layer at the second thickness comprises coupling a first layer of photoresist to the second surface of the copper layer, forming a pattern in the first layer of photoresist, etching through the copper layer at the first thickness at spaces in the pattern in the first layer of photoresist, removing the first layer of photoresist, coupling a second layer of photoresist to the second surface of the copper layer, forming a pattern in the second layer of photoresist, etching through the copper layer at the second thickness at the spaces in the pattern in the second layer of photoresist, and removing the second layer of photoresist. partially etching a first surface of a copper layer to form a pattern comprising a first thickness and a second thickness greater than the first thickness, the first thickness and the second thickness both measured perpendicular to a second surface of the copper layer opposite the first surface of the copper layer, the partial etching being made using photoresist; after removing the photoresist, laminating the first surface of the copper layer with a second surface of a dielectric layer, the dielectric layer coupled to a metallic baseplate at a first surface of the dielectric layer opposite the second surface of the dielectric layer and at a second surface of the metallic baseplate; and forming traces in the copper layer by etching through the copper layer at the first thickness and etching through the copper layer at the second thickness, wherein the traces comprise two different trace thicknesses, where the trace thicknesses are measured perpendicularly to the first surface of the dielectric layer, wherein etching through the copper layer at the first thickness and etching through the copper layer at the second thickness comprises coupling a first layer of photoresist to the second surface of the copper layer, forming a pattern in the first layer of photoresist, etching through the copper layer at the first thickness at spaces in the pattern in the first layer of photoresist, removing the first layer of photoresist, coupling a second layer of photoresist to the second surface of the copper layer, forming a pattern in the second layer of photoresist, etching through the copper layer at the second thickness at the spaces in the pattern in the second layer of photoresist, and removing the second layer of photoresist.