A method of manufacturing an annealed wafer, comprising the steps of: growing a silicon single crystal to which nitrogen, carbon, and hydrogen are added, by Czochralski method; cutting out a substrate from said silicon single crystal; and heat treating said cut-out substrate, wherein, with respect to growth conditions for manufacturing the silicon single crystal by the Czochralski method in said step of growing said silicon single crystal, if a ratio between a crystal pulling rate V (mm/min) and an average temperature gradient G (°C/mm) in a crystal growth axis direction is defined as V/G, and V/G in a case where nitrogen, hydrogen, and carbon are not added to said silicon single crystal is defined as (V/G) crit, crystal pulling conditions are controlled such that V/G is not less than 0.9×(V/G) crit and not more than 2.5×(V/G) crit (where V represents the pulling rate [mm/min], G represents the average temperature gradient [°C/mm] in the crystal growth axis direction from a melting point to 1350°C, and said (V/G) crit is a V/G value of a portion corresponding to a boundary between an I region and a V region in the silicon single crystal to which nitrogen, hydrogen, and carbon are not added, said V region being a region into which excessive vacancies are introduced from a solid-liquid interface during crystal growth, and said I region being a region into which excessive interstitials are introduced from the solid-liquid interface during the crystal growth), and a hydrogen partial pressure within a crystal pulling furnace is set to not less than 3 Pa and less than 40 Pa, said silicon single crystal grown in said step of growing said silicon single crystal is a silicon single crystal to which nitrogen, carbon, and hydrogen are added having a nitrogen concentration of more than 5×10 14 atoms/cm 3 and not more than 6×10 15 atoms/cm 3, and a carbon concentration of not less than 1×10 15 atoms/cm 3 and not more than 9×10 15 atoms/cm 3, and in said step of heat treating, heat treatment is performed in a noble gas atmosphere having an impurity concentration of not more than 5 ppma, or in a non-oxidizing atmosphere in which a film thickness of an oxide film to be formed on a surface of said substrate after the heat treatment is suppressed to not more than 2 nm, at a heating temperature of not less than 1150°C and not more than 1250°C, for a heating time period of not less than 10 minutes and not more than two hours. growing a silicon single crystal to which nitrogen, carbon, and hydrogen are added, by Czochralski method; cutting out a substrate from said silicon single crystal; and heat treating said cut-out substrate, wherein, with respect to growth conditions for manufacturing the silicon single crystal by the Czochralski method in said step of growing said silicon single crystal, if a ratio between a crystal pulling rate V (mm/min) and an average temperature gradient G (°C/mm) in a crystal growth axis direction is defined as V/G, and V/G in a case where nitrogen, hydrogen, and carbon are not added to said silicon single crystal is defined as (V/G) crit, crystal pulling conditions are controlled such that V/G is not less than 0.9×(V/G) crit and not more than 2.5×(V/G) crit (where V represents the pulling rate [mm/min], G represents the average temperature gradient [°C/mm] in the crystal growth axis direction from a melting point to 1350°C, and said (V/G) crit is a V/G value of a portion corresponding to a boundary between an I region and a V region in the silicon single crystal to which nitrogen, hydrogen, and carbon are not added, said V region being a region into which excessive vacancies are introduced from a solid-liquid interface during crystal growth, and said I region being a region into which excessive interstitials are introduced from the solid-liquid interface during the crystal growth), and a hydrogen partial pressure within a crystal pulling furnace is set to not less than 3 Pa and less than 40 Pa, said silicon single crystal grown in said step of growing said silicon single crystal is a silicon single crystal to which nitrogen, carbon, and hydrogen are added having a nitrogen concentration of more than 5×10 14 atoms/cm 3 and not more than 6×10 15 atoms/cm 3, and a carbon concentration of not less than 1×10 15 atoms/cm 3 and not more than 9×10 15 atoms/cm 3, and in said step of heat treating, heat treatment is performed in a noble gas atmosphere having an impurity concentration of not more than 5 ppma, or in a non-oxidizing atmosphere in which a film thickness of an oxide film to be formed on a surface of said substrate after the heat treatment is suppressed to not more than 2 nm, at a heating temperature of not less than 1150°C and not more than 1250°C, for a heating time period of not less than 10 minutes and not more than two hours.