A semiconductor device, comprising: a circuit node; a ground node; a first transistor comprising a source terminal connected to the circuit node, wherein the first transistor is a p-channel field-effect transistor, FET; a second transistor comprising a collector terminal connected to a drain terminal of the first transistor, wherein the second transistor is an NPN bipolar junction transistor, BJT; a first trigger diode comprising a cathode connected to a base terminal of the second transistor and an anode of the first trigger diode connected to the ground node; a third transistor comprising a drain terminal coupled to the circuit node, a source terminal of the third transistor coupled to the ground node, and a gate terminal of the third transistor connected to an emitter terminal of the second transistor, wherein the third transistor is an n-channel FET; and a triggering circuit comprising an input connected to the circuit node and an output of the triggering circuit connected to a gate terminal of the first transistor, wherein the triggering circuit further comprises: a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node, wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor. a circuit node; a ground node; a first transistor comprising a source terminal connected to the circuit node, wherein the first transistor is a p-channel field-effect transistor, FET; a second transistor comprising a collector terminal connected to a drain terminal of the first transistor, wherein the second transistor is an NPN bipolar junction transistor, BJT; a first trigger diode comprising a cathode connected to a base terminal of the second transistor and an anode of the first trigger diode connected to the ground node; a third transistor comprising a drain terminal coupled to the circuit node, a source terminal of the third transistor coupled to the ground node, and a gate terminal of the third transistor connected to an emitter terminal of the second transistor, wherein the third transistor is an n-channel FET; and a triggering circuit comprising an input connected to the circuit node and an output of the triggering circuit connected to a gate terminal of the first transistor, wherein the triggering circuit further comprises: a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node, wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor. a resistor having one terminal connected to the circuit node and a second terminal connected to the gate of the first transistor, a fourth transistor comprising a collector terminal connected to the gate terminal of the first transistor and an emitter terminal of the fourth transistor connected to the ground node, wherein the fourth transistor is an NPN BJT, and a second trigger diode comprising a cathode of the second trigger diode connected to the gate terminal of the first transistor and an anode of the second trigger diode connected to a base terminal of fourth transistor.