Light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a thickness of between 0 and 100 μm inclusive, a first and a second electrical connection side and an epitaxially fabricated semiconductor layer sequence, the second electrical connection side being contact-connectable via a main area of the thin-film light emitting diode chip facing away from the chip carrier and the semiconductor layer sequence - having an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers, - being arranged on the chip carrier, - having a reflective layer at a main area facing toward the chip carrier, which reflective layer reflects at least a part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter, - having at least one semiconductor layer with at least one micropatterned, rough area and - having a coupling-out area defined by a main area remote from the reflective layer, - the coupling-out area adjoining a region which is filled with a gas or provided with a vacuum, - the semiconductor layer sequence generating electromagnetic radiation with a wavelength in the UV range, - the semiconductor component having a housing frame, which is arranged either on the chip carrier or on a housing bottom which is different therefrom and has electrical connecting conductors (9, 10), the chip carrier being applied on the housing bottom and the chip carrier being electrically connected to the connecting conductors (9, 10) of the housing bottom, and the housing frame defining with the housing bottom a housing cavity in which the thin-film light emitting diode chip is arranged, - the semiconductor component having a radiation transmissive covering plate fitted in such a way that it covers and/or closes an opening of the housing cavity, - a luminescence conversion material being arranged downstream of the thin-film light emitting diode chip in the emission direction, which material wavelength-converts at least a part of an electromagnetic radiation emitted by the thin-film light emitting diode chip, - the luminescence conversion material being applied in the form of a converter layer to a main area of the covering plate that faces the interior of the housing cavity, and - the converter layer having a surface with a rough structure, the rough structure of the converter layer having a structure size which is of the order of magnitude of the wavelength of the electromagnetic radiation emitted by the semiconductor component. - having an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers, - being arranged on the chip carrier, - having a reflective layer at a main area facing toward the chip carrier, which reflective layer reflects at least a part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter, - having at least one semiconductor layer with at least one micropatterned, rough area and - having a coupling-out area defined by a main area remote from the reflective layer, - the coupling-out area adjoining a region which is filled with a gas or provided with a vacuum, - the semiconductor layer sequence generating electromagnetic radiation with a wavelength in the UV range, - the semiconductor component having a housing frame, which is arranged either on the chip carrier or on a housing bottom which is different therefrom and has electrical connecting conductors (9, 10), the chip carrier being applied on the housing bottom and the chip carrier being electrically connected to the connecting conductors (9, 10) of the housing bottom, and the housing frame defining with the housing bottom a housing cavity in which the thin-film light emitting diode chip is arranged, - the semiconductor component having a radiation transmissive covering plate fitted in such a way that it covers and/or closes an opening of the housing cavity, - a luminescence conversion material being arranged downstream of the thin-film light emitting diode chip in the emission direction, which material wavelength-converts at least a part of an electromagnetic radiation emitted by the thin-film light emitting diode chip, - the luminescence conversion material being applied in the form of a converter layer to a main area of the covering plate that faces the interior of the housing cavity, and - the converter layer having a surface with a rough structure, the rough structure of the converter layer having a structure size which is of the order of magnitude of the wavelength of the electromagnetic radiation emitted by the semiconductor component.