A manufacturing method of a thin film transistor array substrate, comprising a plurality of pixel units, the method comprising: depositing an oxide thin film on a substrate, and conducting surface treatment to the oxide thin film, forming a conductive layer thin film on a surface of the oxide thin film; and the oxide thin film that has not been treated under the conductive layer thin film being an active layer thin film, so as to form the active layer thin film and the conductive layer thin film on the substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, patterning the conductive layer thin film and the source/drain electrode layer thin film using a gray tone or halftone masking process, to form data lines, to form, for each pixel unit, a pixel electrode with the patterned conductive layer, and to form, for each pixel unit, source/drain electrodes (331, 332) of a thin film transistor with the patterned source/drain electrode layer thin film, wherein the source electrode of the thin film transistor being connected with one of the data lines; after depositing an insulating layer thin film covering the active layer thin film, the source/drain electrodes (331, 332), the data lines and the pixel electrodes, forming, in each pixel unit, a through hole in the insulating layer thin film and a gate insulating layer by patterning the insulating layer thin film and the active layer thin film, to form an active layer of the thin film transistor with the patterned active layer thin film, wherein the through hole being provided at a selected position in the area corresponding to the one of the data lines; and forming for each pixel unit a gate electrode of the corresponding thin film transistor and gate scanning lines crossing with the data lines on the insulating layer, and the gate electrode of the thin film transistor being connected with one of the gate scanning lines, wherein forming for each pixel unit the through hole in the insulating layer thin film and the gate insulating layer of the thin film transistor to form the active layer of the thin film transistor comprises: coating photoresist on the deposited insulating layer thin film, after exposing and developing the photoresist, etching the insulating layer thin film and the active layer thin film, to obtain, in each pixel unit, the through hole and the gate insulating layer and the active layer of the thin film transistor; wherein, in each pixel unit whose boundaries are defined by corresponding two of the gate scanning lines and corresponding two of the data lines, the active layer of the thin film transistor is located within the pixel unit and is distributed within the whole area of the pixel unit. depositing an oxide thin film on a substrate, and conducting surface treatment to the oxide thin film, forming a conductive layer thin film on a surface of the oxide thin film; and the oxide thin film that has not been treated under the conductive layer thin film being an active layer thin film, so as to form the active layer thin film and the conductive layer thin film on the substrate; depositing a source/drain electrode layer thin film on the conductive layer thin film, patterning the conductive layer thin film and the source/drain electrode layer thin film using a gray tone or halftone masking process, to form data lines, to form, for each pixel unit, a pixel electrode with the patterned conductive layer, and to form, for each pixel unit, source/drain electrodes (331, 332) of a thin film transistor with the patterned source/drain electrode layer thin film, wherein the source electrode of the thin film transistor being connected with one of the data lines; after depositing an insulating layer thin film covering the active layer thin film, the source/drain electrodes (331, 332), the data lines and the pixel electrodes, forming, in each pixel unit, a through hole in the insulating layer thin film and a gate insulating layer by patterning the insulating layer thin film and the active layer thin film, to form an active layer of the thin film transistor with the patterned active layer thin film, wherein the through hole being provided at a selected position in the area corresponding to the one of the data lines; and forming for each pixel unit a gate electrode of the corresponding thin film transistor and gate scanning lines crossing with the data lines on the insulating layer, and the gate electrode of the thin film transistor being connected with one of the gate scanning lines, wherein forming for each pixel unit the through hole in the insulating layer thin film and the gate insulating layer of the thin film transistor to form the active layer of the thin film transistor comprises: coating photoresist on the deposited insulating layer thin film, after exposing and developing the photoresist, etching the insulating layer thin film and the active layer thin film, to obtain, in each pixel unit, the through hole and the gate insulating layer and the active layer of the thin film transistor; wherein, in each pixel unit whose boundaries are defined by corresponding two of the gate scanning lines and corresponding two of the data lines, the active layer of the thin film transistor is located within the pixel unit and is distributed within the whole area of the pixel unit.