A method of preparing a multilayer structure, the method comprising: depositing a handle dielectric layer comprising a reflowable insulating layer on a front surface of a single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal semiconductor handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal semiconductor handle substrate, a central plane between the front surface and the back surface of the single crystal semiconductor handle substrate, and a bulk region between the front and back surfaces (102, 104) of the single crystal semiconductor handle substrate, wherein the reflowable insulating layer is capable of flowing at a temperature of less than about 1000°C and further wherein the reflowable insulating layer comprises a silicate glass selected from the group consisting of phosphosilicate glass, borosilicate glass, borophosphosilicate glass, and any combination thereof; curing the reflowable insulating layer by (i) contacting the reflowable insulating layer with ozone; or (ii) irradiating the reflowable insulating layer with ultraviolet light; or (iii) annealing the reflowable insulating layer at a temperature between about 800°C and about 1000°C; and bonding a donor dielectric layer on a front surface of a single crystal semiconductor donor substrate to the handle dielectric layer comprising the cured reflowable insulating layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, a central plane between the front and back surfaces of the semiconductor donor substrate, and a bulk region between the front and back surfaces of the semiconductor donor substrate, and further wherein the single crystal semiconductor donor substrate comprises a cleave plane. depositing a handle dielectric layer comprising a reflowable insulating layer on a front surface of a single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal semiconductor handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal semiconductor handle substrate, a central plane between the front surface and the back surface of the single crystal semiconductor handle substrate, and a bulk region between the front and back surfaces (102, 104) of the single crystal semiconductor handle substrate, wherein the reflowable insulating layer is capable of flowing at a temperature of less than about 1000°C and further wherein the reflowable insulating layer comprises a silicate glass selected from the group consisting of phosphosilicate glass, borosilicate glass, borophosphosilicate glass, and any combination thereof; curing the reflowable insulating layer by (i) contacting the reflowable insulating layer with ozone; or (ii) irradiating the reflowable insulating layer with ultraviolet light; or (iii) annealing the reflowable insulating layer at a temperature between about 800°C and about 1000°C; and bonding a donor dielectric layer on a front surface of a single crystal semiconductor donor substrate to the handle dielectric layer comprising the cured reflowable insulating layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, a central plane between the front and back surfaces of the semiconductor donor substrate, and a bulk region between the front and back surfaces of the semiconductor donor substrate, and further wherein the single crystal semiconductor donor substrate comprises a cleave plane.