A method for manufacturing a first support for forming, in particular with a second support, an optoelectronic component, the first support having a first and a second face (100A, 100B) and comprising a plurality of diode type structures (130A, 130B, 130C) at least one metal contact of which flushes with the first surface, and an alignment mark on the second face able to allow alignment with the second support upon assembling the first support through its second face to the second support for forming the optoelectronic component, the method comprising the following steps of: - providing a substrate, the substrate comprising a support layer made of a first material comprising cadmium, and a semiconductor layer having a first and a second surface (110A, 110B) and being in contact with the support layer through the second surface of said semiconductor layer, the semiconductor layer being made of a second material comprising a cadmium atomic proportion x 2 lower than a cadmium atomic proportion x 1 of the first material, - forming an aperture in the semiconductor layer from the first surface towards the second surface, - implanting in a localised manner arsenic of the semiconductor layer through the first surface on a plurality of first locations (131A, 131B, 131C) of the semiconductor layer and at a second location located in the aperture for forming respectively the structures (130A, 130B, 130C) and an alignment mark, the localised implantation reaching the second surface in the second location, - heat treating able to activate the implanted arsenic on the plurality of first locations (131A, 131B, 131C) to form doped zones of a second conductivity type in which the majority carriers are holes, said doped zones participating in forming the structures (130A, 130B, 130C) corresponding to said doped zones, the heat treatment being also adapted to allow cadmium diffusion from the support layer to the second location, said diffusion being promoted by the arsenic implanted in said second location and allowing providing the alignment mark flushing with the second surface and which has a cadmium atomic proportion x 3 higher than the cadmium atomic proportion x 2 of the rest of the semiconductor layer at the same distance from the second surface, - removing the support layer and a part of the thickness of the semiconductor layer by means of an etching sensitive to the cadmium atomic proportion such that the second surface of the semiconductor layer has a height difference between the alignment mark, which flushes with the second surface and which corresponds to the second location, and the rest of the second surface, the semiconductor layer thus released from the support layer forming the first support, the first and the second surface (110A, 110B) of the semiconductor layer forming the first and second faces (100A, 100B) of said first support. - providing a substrate, the substrate comprising a support layer made of a first material comprising cadmium, and a semiconductor layer having a first and a second surface (110A, 110B) and being in contact with the support layer through the second surface of said semiconductor layer, the semiconductor layer being made of a second material comprising a cadmium atomic proportion x 2 lower than a cadmium atomic proportion x 1 of the first material, - forming an aperture in the semiconductor layer from the first surface towards the second surface, - implanting in a localised manner arsenic of the semiconductor layer through the first surface on a plurality of first locations (131A, 131B, 131C) of the semiconductor layer and at a second location located in the aperture for forming respectively the structures (130A, 130B, 130C) and an alignment mark, the localised implantation reaching the second surface in the second location, - heat treating able to activate the implanted arsenic on the plurality of first locations (131A, 131B, 131C) to form doped zones of a second conductivity type in which the majority carriers are holes, said doped zones participating in forming the structures (130A, 130B, 130C) corresponding to said doped zones, the heat treatment being also adapted to allow cadmium diffusion from the support layer to the second location, said diffusion being promoted by the arsenic implanted in said second location and allowing providing the alignment mark flushing with the second surface and which has a cadmium atomic proportion x 3 higher than the cadmium atomic proportion x 2 of the rest of the semiconductor layer at the same distance from the second surface, - removing the support layer and a part of the thickness of the semiconductor layer by means of an etching sensitive to the cadmium atomic proportion such that the second surface of the semiconductor layer has a height difference between the alignment mark, which flushes with the second surface and which corresponds to the second location, and the rest of the second surface, the semiconductor layer thus released from the support layer forming the first support, the first and the second surface (110A, 110B) of the semiconductor layer forming the first and second faces (100A, 100B) of said first support.