Circuit arrangement, comprising: a power semiconductor switch having a power terminal serving for feeding current, and having a control terminal; a driving circuit for driving the power semiconductor switch, comprising a signal processing unit (CONTROL) for generating a control terminal signal for the control terminal of the power semiconductor switch, wherein the driving circuit (20; 21; 22; 23) comprises a resistor series circuit (RVCE1, RVCE2, RVCE3) which is connected to the power terminal of the power semiconductor switch serving for feeding current and the output of which is connected to a first input of the signal processing unit (CONTROL), and wherein the signal processing unit (CONTROL) has a second input for a reference voltage (VC-REF) for the collector-emitter voltage of the power semiconductor switch, wherein at least one semiconductor component (DZCE1, DZCE2, DZCE3) is provided, wherein an output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is connected via a conductive connection to a terminal between the resistors (RVCE1, RVCE2, RVCE3) of the resistor series circuit or to the output of the resistor series circuit, said output being connected to the signal processing unit (CONTROL), wherein the output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is furthermore connected to the power terminal of the power semiconductor switch, characterized in that a second output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is connected to the control terminal of the power semiconductor switch, wherein the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is configured in such a way that it is operated at breakdown upon a specific collector-emitter voltage of the power semiconductor switch being exceeded, such that a potential at the terminal or output of the resistor series circuit is kept constant at least at times, and wherein the breakdown voltage of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is chosen in such a way that the potential at the output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is greater than the potential at the control terminal of the power semiconductor switch in the switched-on state of the power semiconductor switch. a power semiconductor switch having a power terminal serving for feeding current, and having a control terminal; a driving circuit for driving the power semiconductor switch, comprising a signal processing unit (CONTROL) for generating a control terminal signal for the control terminal of the power semiconductor switch, wherein the driving circuit (20; 21; 22; 23) comprises a resistor series circuit (RVCE1, RVCE2, RVCE3) which is connected to the power terminal of the power semiconductor switch serving for feeding current and the output of which is connected to a first input of the signal processing unit (CONTROL), and wherein the signal processing unit (CONTROL) has a second input for a reference voltage (VC-REF) for the collector-emitter voltage of the power semiconductor switch, wherein at least one semiconductor component (DZCE1, DZCE2, DZCE3) is provided, wherein an output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is connected via a conductive connection to a terminal between the resistors (RVCE1, RVCE2, RVCE3) of the resistor series circuit or to the output of the resistor series circuit, said output being connected to the signal processing unit (CONTROL), wherein the output of the at least one semiconductor component (DZCE1, DZCE2, DZCE3) is furthermore connected to the power terminal of the power semiconductor switch,