A light emitting diode comprising: - a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer between the first and second conductivity-type semiconductor layers (112,116); - a first electrode on the first conductivity-type semiconductor layer; - a second electrode under the second conductivity-type semiconductor layer; - a texture over a first region of the first conductivity-type semiconductor layer; - wherein the first region extends over the entire first conductivity-type semiconductor layer except for a second region, the second region being positioned at a center portion of the first conductivity-type semiconductor layer; - wherein no texture is formed over the second region of the first conductivity-type semiconductor layer; - wherein the light emitting diode has a rectangular shape in plan view; - wherein the first electrode consists of an A-electrode over the first region disposed directly on the first conductivity-type semiconductor layer and a B-electrode over the second region disposed directly on the first conductivity-type semiconductor layer, and - wherein the B-electrode includes a pad electrode connected to a wire, characterised in that: - the second region has a rectangular shape in plan view; - the A-electrode consists of a frame having the same rectangular shape in plan view as the light emitting diode and being positioned at an outer portion of the first conductivity-type semiconductor layer; and - the B-electrode consists of a stripe having the same rectangular shape in plan view as the second region and extending between two opposite portions of the A-electrode. - a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer between the first and second conductivity-type semiconductor layers (112,116); - a first electrode on the first conductivity-type semiconductor layer; - a second electrode under the second conductivity-type semiconductor layer; - a texture over a first region of the first conductivity-type semiconductor layer; - wherein the first region extends over the entire first conductivity-type semiconductor layer except for a second region, the second region being positioned at a center portion of the first conductivity-type semiconductor layer; - wherein no texture is formed over the second region of the first conductivity-type semiconductor layer; - wherein the light emitting diode has a rectangular shape in plan view; - wherein the first electrode consists of an A-electrode over the first region disposed directly on the first conductivity-type semiconductor layer and a B-electrode over the second region disposed directly on the first conductivity-type semiconductor layer, and - wherein the B-electrode includes a pad electrode connected to a wire, - the second region has a rectangular shape in plan view; - the A-electrode consists of a frame having the same rectangular shape in plan view as the light emitting diode and being positioned at an outer portion of the first conductivity-type semiconductor layer; and - the B-electrode consists of a stripe having the same rectangular shape in plan view as the second region and extending between two opposite portions of the A-electrode.