Light-emitting diode with a stack-shaped structure predominantly consisting of III-V semiconductor layers, comprising a first region and a second region and a third region, wherein all three regions (31, 32, 33) have the following semiconductor layers in the stated sequence - a carrier layer, - an n-doped lower casing layer, - an active layer generating electromagnetic radiation, - wherein the active layer has a quantum-well structure, - a p-doped upper casing layer, characterised in that the first region additionally comprises - a tunnel diode constructed on the upper casing layer and formed from a p + layer and an n + layer, wherein the p + layer of the tunnel diode consists of a III arsenide or comprises a III arsenide and the n + layer of the tunnel diode consists of a III phosphide or comprises a III phosphide, - an n-doped current distributor layer, wherein the current distributor layer consists of a III arsenide or comprises a III arsenide, - an n-doped contact layer, wherein the n-doped contact layer consists of a III arsenide or comprises a III arsenide, and - the n-doped contact layer is covered by a conductor track and the layers additionally stated for the first region are arranged in the aforesaid sequence, and wherein at least the lower casing layer, the active layer, the upper casing layer, the tunnel diode and the current distributor layer are of monolithic construction, - the second region and the third region do not have or partly have the additional layers of the first region, - the second region has a contact hole with a base region and in the base region of the contact hole the additional following layers are formed, - an injection barrier, which is formed areally in the upper casing layer or at the surface of the upper casing layer or above the upper casing layer, in order to suppress a current flow opposite to the stack direction, - a conductor track by which the injection barrier is covered, - the third region is formed to be textured, wherein the texture has depressions and the depressions reach completely through the current distributor layer and through the n + layer of the tunnel diode. - a carrier layer, - an n-doped lower casing layer, - an active layer generating electromagnetic radiation, - wherein the active layer has a quantum-well structure, - a p-doped upper casing layer, characterised in that the first region additionally comprises - a tunnel diode constructed on the upper casing layer and formed from a p + layer and an n + layer, wherein the p + layer of the tunnel diode consists of a III arsenide or comprises a III arsenide and the n + layer of the tunnel diode consists of a III phosphide or comprises a III phosphide, - an n-doped current distributor layer, wherein the current distributor layer consists of a III arsenide or comprises a III arsenide, - an n-doped contact layer, wherein the n-doped contact layer consists of a III arsenide or comprises a III arsenide, and - the n-doped contact layer is covered by a conductor track and the layers additionally stated for the first region are arranged in the aforesaid sequence, and wherein at least the lower casing layer, the active layer, the upper casing layer, the tunnel diode and the current distributor layer are of monolithic construction, - the second region and the third region do not have or partly have the additional layers of the first region, - the second region has a contact hole with a base region and in the base region of the contact hole the additional following layers are formed, - an injection barrier, which is formed areally in the upper casing layer or at the surface of the upper casing layer or above the upper casing layer, in order to suppress a current flow opposite to the stack direction, - a conductor track by which the injection barrier is covered, - the third region is formed to be textured, wherein the texture has depressions and the depressions reach completely through the current distributor layer and through the n + layer of the tunnel diode.