A light-emitting device comprising: a substrate; a light-emitting structure on the substrate, the light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer deposited in that order on the substrate; a light-transmitting electrode layer on a top surface of the second semiconductor layer; a first reflective layer on the light-transmitting electrode layer, a first electrode pad on the partially exposed top of the first semiconductor layer; and a second electrode pad on the second semiconductor layer; wherein the first reflective layer comprises a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction, wherein the first reflective layer is on the top of the light-transmitting electrode layer and the exposed top of the first semiconductor layer, wherein the first reflective layer extends from the top of the light-transmitting electrode layer to the top of the first semiconductor layer along the side of the active layer and the second semiconductor layer, characterized in that: - the light-emitting device further comprises a second reflective layer formed in the light-transmitting electrode layer such that said second reflective layer does not contact either of the second semiconductor layer and the second electrode pad; - the second reflective layer at least partially vertically overlaps the second electrode pad and includes a third layer having a third index of refraction and a fourth layer having a fourth index of refraction different from the third index of refraction, and - the second reflective layer has a width greater than that of the second electrode pad. a substrate; a light-emitting structure on the substrate, the light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer deposited in that order on the substrate; a light-transmitting electrode layer on a top surface of the second semiconductor layer; a first reflective layer on the light-transmitting electrode layer, a first electrode pad on the partially exposed top of the first semiconductor layer; and a second electrode pad on the second semiconductor layer; wherein the first reflective layer comprises a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction, wherein the first reflective layer is on the top of the light-transmitting electrode layer and the exposed top of the first semiconductor layer, wherein the first reflective layer extends from the top of the light-transmitting electrode layer to the top of the first semiconductor layer along the side of the active layer and the second semiconductor layer, characterized in that: - the light-emitting device further comprises a second reflective layer formed in the light-transmitting electrode layer such that said second reflective layer does not contact either of the second semiconductor layer and the second electrode pad; - the second reflective layer at least partially vertically overlaps the second electrode pad and includes a third layer having a third index of refraction and a fourth layer having a fourth index of refraction different from the third index of refraction, and - the second reflective layer has a width greater than that of the second electrode pad. - the light-emitting device further comprises a second reflective layer formed in the light-transmitting electrode layer such that said second reflective layer does not contact either of the second semiconductor layer and the second electrode pad; - the second reflective layer at least partially vertically overlaps the second electrode pad and includes a third layer having a third index of refraction and a fourth layer having a fourth index of refraction different from the third index of refraction, and - the second reflective layer has a width greater than that of the second electrode pad.