A method for producing a semiconductor apparatus, the method sequentially comprising: a process of fabricating a plurality of semiconductor chips by cutting a semiconductor chip substrate where a plurality of semiconductor circuit sections, that are light receiving sections, are formed on a first main face and electrode pads are formed around each of the semiconductor circuit sections; a process of fabricating a joined wafer by bonding the first main face of each of the semiconductor chips to a support substrate via an adhesive layer; a process of filling a gap between the plurality of semiconductor chips bonded to the joined wafer with a sealing member; a process of machining the joined wafer from a main face side of the plurality of chips opposite the first main side to reduce a thickness and to form a second main face; a process of forming an etching mask on the second main face; a process of forming through-hole vias in the semiconductor chips by using the etching mask; a process of stripping the etching mask; a process of forming an insulating layer that covers the second main face of the semiconductor chips, a surface of the sealing member, and a wall face of the through-hole vias; a process of forming through-hole interconnections, each of which is connected to a respective one of the electrode pads via each of the through-hole vias; a process of forming external connection electrodes, each of which is connected to a respective one of the through-hole interconnections on the second main face; and a process of cutting the joined wafer, wherein the sealing member is an insulator in which a light shielding and non-conductive pigment is mixed. a process of fabricating a plurality of semiconductor chips by cutting a semiconductor chip substrate where a plurality of semiconductor circuit sections, that are light receiving sections, are formed on a first main face and electrode pads are formed around each of the semiconductor circuit sections; a process of fabricating a joined wafer by bonding the first main face of each of the semiconductor chips to a support substrate via an adhesive layer; a process of filling a gap between the plurality of semiconductor chips bonded to the joined wafer with a sealing member; a process of machining the joined wafer from a main face side of the plurality of chips opposite the first main side to reduce a thickness and to form a second main face; a process of forming an etching mask on the second main face; a process of forming through-hole vias in the semiconductor chips by using the etching mask; a process of stripping the etching mask; a process of forming an insulating layer that covers the second main face of the semiconductor chips, a surface of the sealing member, and a wall face of the through-hole vias; a process of forming through-hole interconnections, each of which is connected to a respective one of the electrode pads via each of the through-hole vias; a process of forming external connection electrodes, each of which is connected to a respective one of the through-hole interconnections on the second main face; and a process of cutting the joined wafer, wherein the sealing member is an insulator in which a light shielding and non-conductive pigment is mixed.