Laser light source for emitting coherent electromagnetic radiation with a vertical far-field beam profile, comprising - a semiconductor layer sequence for generating the coherent electromagnetic radiation with a substrate and an active region on the substrate, wherein the coherent electromagnetic radiation is emitted in operation at least from a main emission region of a radiation decoupling surface with an emission direction and the radiation decoupling surface is formed by a side surface of the semiconductor layer sequence, and - a filter element which suppresses coherent electromagnetic radiation generated during operation, which is emitted from a secondary emission region of the radiation decoupling surface which is vertically offset with respect to the main emission region and spatially separated, in the vertical far-field beam profile, the vertical direction being determined by a growth direction of layers of the semiconductor layer sequence, and a heat sink wherein the semiconductor layer sequence and the filter element are each arranged on the heat sink, and wherein the filter element has at least one of the following features: - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region, wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction. - a semiconductor layer sequence for generating the coherent electromagnetic radiation with a substrate and an active region on the substrate, wherein the coherent electromagnetic radiation is emitted in operation at least from a main emission region of a radiation decoupling surface with an emission direction and the radiation decoupling surface is formed by a side surface of the semiconductor layer sequence, and - a filter element which suppresses coherent electromagnetic radiation generated during operation, which is emitted from a secondary emission region of the radiation decoupling surface which is vertically offset with respect to the main emission region and spatially separated, in the vertical far-field beam profile, the vertical direction being determined by a growth direction of layers of the semiconductor layer sequence, and a heat sink wherein the semiconductor layer sequence and the filter element are each arranged on the heat sink, and wherein the filter element has at least one of the following features: - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region, wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction. - a diode and/or a photodiode which is/are arranged on a surface region of the heat sink onto which the coherent radiation emitted by the secondary emission region is irradiated, - at least one cut-out in an underside of the substrate opposite the active region, wherein the at least one cut-out is a blind hole or a straight or kinked channel along and/or transverse to the emission direction.