A piezo-resistor based sensor comprising at least one sensing element provided on a flexible structure, the sensing element comprising: - at least one piezo-diffusion region of a first conductivity type in a well of a second conductivity type different from the first conductivity type, - two or more contacts in electrical contact with islands in the piezo-diffusion region, the piezo-diffusion region extending between the two or more contacts, wherein the islands have a higher doping of the first conductivity type than the doping of the piezo-diffusion region - a conductive interconnect structure per contact for electrically biasing the piezo-diffusion region through the contacts, - wherein a conductive shield (108, 208, 308) is covering the piezo-diffusion region between the contacts and extends over side walls of the piezo-diffusion region between the contacts and wherein each conductive interconnect structure is covering the piezo-diffusion region at the corresponding contact and extends over edges of the piezo-diffusion region at the corresponding contact and wherein each island is at one side covered by its corresponding conductive interconnect structure, - wherein the piezo-diffusion region is between the well on one side and the conductive shield (108, 208, 308) and the interconnect structures on an opposite side, and - wherein the conductive shield and the interconnect structure are metallic and formed with a same layer, and a gap is present between the conductive shield and the interconnect structure, wherein the sensing element comprises a guard ring of the second conductivity type around the piezo diffusion region with a distance between the guard ring and the piezo diffusion region, wherein the conductive shield is covering the well between the piezo diffusion region and the guard ring, and an edge of the guard ring facing the piezo diffusion region and wherein the guard ring runs from under an edge of the interconnect structure to under an edge of the conductive shield, - or wherein the edges of the piezo-diffusion region are completely covered by the combination of the conductive shield (108, 308) and the interconnect structures. - at least one piezo-diffusion region of a first conductivity type in a well of a second conductivity type different from the first conductivity type, - two or more contacts in electrical contact with islands in the piezo-diffusion region, the piezo-diffusion region extending between the two or more contacts, wherein the islands have a higher doping of the first conductivity type than the doping of the piezo-diffusion region - a conductive interconnect structure per contact for electrically biasing the piezo-diffusion region through the contacts, - wherein a conductive shield (108, 208, 308) is covering the piezo-diffusion region between the contacts and extends over side walls of the piezo-diffusion region between the contacts and wherein each conductive interconnect structure is covering the piezo-diffusion region at the corresponding contact and extends over edges of the piezo-diffusion region at the corresponding contact and wherein each island is at one side covered by its corresponding conductive interconnect structure, - wherein the piezo-diffusion region is between the well on one side and the conductive shield (108, 208, 308) and the interconnect structures on an opposite side, and - wherein the conductive shield and the interconnect structure are metallic and formed with a same layer, and a gap is present between the conductive shield and the interconnect structure, wherein the sensing element comprises a guard ring of the second conductivity type around the piezo diffusion region with a distance between the guard ring and the piezo diffusion region, wherein the conductive shield is covering the well between the piezo diffusion region and the guard ring, and an edge of the guard ring facing the piezo diffusion region and wherein the guard ring runs from under an edge of the interconnect structure to under an edge of the conductive shield, - or wherein the edges of the piezo-diffusion region are completely covered by the combination of the conductive shield (108, 308) and the interconnect structures.