A method for producing a ceramic circuit board including a ceramic substrate and a metal circuit (2a, 2b) formed on the ceramic substrate, the metal circuit having a first metal layer (21a, 21b) containing at least either of aluminum or an aluminum alloy as a main component and a second metal layer (22a, 22b) containing at least either of copper or a copper alloy as a main component, the method comprising: a step of forming the first metal layer: (21a, 21b) in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of the ceramic substrate from a nozzle, the first metal powder being heated to from 10°C to 270°C and then ejected from the nozzle, and a gauge pressure of the inert gas at an inlet of the nozzle being from 1.5 to 5.0 MPa; a step of subjecting the first metal layer (21a, 21b) formed on the ceramic substrate to a heat treatment in an inert gas atmosphere; a step of forming the second metal layer: (22a, 22b) in contact with the first metal layer (21a, 21b) by spraying a second metal powder containing at least either of copper particles or copper alloy particles together with an inert gas onto a surface of the first metal layer from a nozzle, the second metal powder being heated to from 10°C to 650°C and then ejected from the nozzle, a gauge pressure of the inert gas at an inlet of the nozzle being from 1.5 to 5.0 MPa, and the second metal layer (22a, 22b) being formed so that an end face of the first metal layer (21a, 21b) and an end face of the second metal layer (22a, 22b) are flush with each other or an end face of the first metal layer (21a, 21b) protrudes to an outer side than an end face of the second metal layer (22a, 22b), wherein the content of the metal elements other than copper in the second metal powder is 6.0% by mass or less with respect to the mass of the second metal powder; and a step of subjecting the second metal layer (22a, 22b) formed on the first metal layer (21a, 21b) to a heat treatment in an inert gas atmosphere, wherein the second metal layer Z (22a, 22b) is heated to from 250°C to 350°C. a step of forming the first metal layer: (21a, 21b) in contact with the ceramic substrate by spraying a first metal powder containing at least either of aluminum particles or aluminum alloy particles together with an inert gas onto a surface of the ceramic substrate from a nozzle, the first metal powder being heated to from 10°C to 270°C and then ejected from the nozzle, and a gauge pressure of the inert gas at an inlet of the nozzle being from 1.5 to 5.0 MPa; a step of subjecting the first metal layer (21a, 21b) formed on the ceramic substrate to a heat treatment in an inert gas atmosphere; a step of forming the second metal layer: (22a, 22b) in contact with the first metal layer (21a, 21b) by spraying a second metal powder containing at least either of copper particles or copper alloy particles together with an inert gas onto a surface of the first metal layer from a nozzle, the second metal powder being heated to from 10°C to 650°C and then ejected from the nozzle, a gauge pressure of the inert gas at an inlet of the nozzle being from 1.5 to 5.0 MPa, and the second metal layer (22a, 22b) being formed so that an end face of the first metal layer (21a, 21b) and an end face of the second metal layer (22a, 22b) are flush with each other or an end face of the first metal layer (21a, 21b) protrudes to an outer side than an end face of the second metal layer (22a, 22b), wherein the content of the metal elements other than copper in the second metal powder is 6.0% by mass or less with respect to the mass of the second metal powder; and a step of subjecting the second metal layer (22a, 22b) formed on the first metal layer (21a, 21b) to a heat treatment in an inert gas atmosphere, wherein the second metal layer Z (22a, 22b) is heated to from 250°C to 350°C.