mhurhangee/ep-ind-claims huggingface dataset:
An implantable device adapted for assisting the flow of blood from left atrium to descending aorta of an in-vivo heart, the implantable device comprising: an inlet cannula adapted to be connected to the left atrium and an outlet cannula adapted to be connected to the descending aorta, wherein the inlet and outlet cannula is in fluid communication with a blood pressure pump; a first accelerometer mounted on the housing of the blood pressure pump, wherein the first accelerometer is adapted for measuring mitral valve motion; an implanted controller in electrical communication with at least one implanted ECG sensor adapted for detecting ECG signals, wherein the at least one implanted ECG sensor is positioned between the blood pressure pump and the implanted controller; the implanted controller comprises a processor adapted to analyse detected ECG signals, and the mitral valve motion; the processor dynamically adjusts the target blood pressure pump speed based on ECG signals and mitral valve motion such that the blood flows from left atrium to both left ventricle and descending aorta. an inlet cannula adapted to be connected to the left atrium and an outlet cannula adapted to be connected to the descending aorta, wherein the inlet and outlet cannula is in fluid communication with a blood pressure pump; a first accelerometer mounted on the housing of the blood pressure pump, wherein the first accelerometer is adapted for measuring mitral valve motion; an implanted controller in electrical communication with at least one implanted ECG sensor adapted for detecting ECG signals, wherein the at least one implanted ECG sensor is positioned between the blood pressure pump and the implanted controller; the implanted controller comprises a processor adapted to analyse detected ECG signals, and the mitral valve motion; the processor dynamically adjusts the target blood pressure pump speed based on ECG signals and mitral valve motion such that the blood flows from left atrium to both left ventricle and descending aorta.
A feeder for a machine for handling mailpieces, comprising a mailpiece-receiving deck, a longitudinal referencing wall, at least one row of drive rollers comprising at least first and second drive rollers standing proud through said mailpiece-receiving deck, and a suitable drive mechanism for controlling said at least one row of drive rollers, said first and second drive rollers being inclined at an angle α relative to a perpendicular to said longitudinal referencing wall for shifting said mailpieces towards said longitudinal referencing wall while also conveying them downstream, characterized in that said at least one row of drive rollers has means for driving said second drive roller in rotation with a first predetermined delay relative to said first drive roller which is the closer to said longitudinal referencing wall, so as to cause said mailpieces to pivot.
A method of preparing a graft copolymer, comprising: preparing a liquid maleimide-based monomer; preparing a reaction solution including a diene-based rubber polymer, an aromatic vinyl-based monomer, and a vinyl cyan-based monomer; and adding the liquid maleimide-based monomer and the reaction solution to a reactor and carrying out polymerization. preparing a liquid maleimide-based monomer; preparing a reaction solution including a diene-based rubber polymer, an aromatic vinyl-based monomer, and a vinyl cyan-based monomer; and adding the liquid maleimide-based monomer and the reaction solution to a reactor and carrying out polymerization.
A hydroprocessing catalyst composition, comprising: a support material which is alumina, silica, silica-alumina or a mixture thereof which support material is loaded with an active metal precursor, an amine component, and a non-amine containing polar additive to provide a metal loaded support material, wherein the metal element is selected from Group 6, 9 and 10 of the IUPAC Periodic Table of the elements, the Group 6 metal being selected from chromium, molybdenum, and tungsten, and the Group 9 and 10 metal being selected from cobalt and nickel, and wherein said amine component is selected from the group of compounds consisting of ether amine compounds, alkyl or alkenyl amine compounds, and amine oxide compounds, wherein further said non-amine containing polar additive is selected from DMF and n-formylmorpholine, wherein, when present, the Group 9 and 10 metal component is present in the support material in an amount in the range of 0.5 wt. % to 20 wt. %, based on the dry support material and the metal component as the element regardless of the actual form of the metal component; wherein, when present, the Group 6 metal component is present in the support material in an amount in the range of 5 wt. % to 50 wt. %, based on the dry support material and the metal component as the element regardless of the actual form of the metal component; wherein at least 75 % of the pore volume of the metal-loaded support material is filled with the amine component and the non-amine containing polar additive; and wherein the weight ratio of said non-amine containing polar additive to said amine component is in the range of from 0.25:1 to 6:1.
A power semiconductor module, comprising: a first plate; a second plate configured to comprise first and second device receiving portions (251, 253) thereinside, and coupled to one side of the first plate; first and second power semiconductor devices (121, 123) arranged in the first and second device receiving portions (251, 253); first and second input bus bars (410, 420) coupled to an outside of the second plate; a third plate configured to comprise third and fourth device receiving portions (351, 353) thereinside, and coupled to the other side of the first plate; third and fourth power semiconductor devices (125, 127) arranged in the third and fourth device receiving portions (351, 353); and third and fourth input bus bars (430, 440) coupled to an outside of the third plate, wherein the first plate and the second plate are sealed to shield the first and second device receiving portions (251, 253) from outside, wherein the first plate and the third plate are sealed to shield the third and fourth device receiving portions (351, 353) from the outside, wherein the second plate includes a first partition wall placed between the first device receiving portion and the second device receiving portion, and a bottom surface of the first partition wall is in contact with the one side of the first plate, and wherein the third plate includes a second partition wall placed between the third device receiving portion and the fourth device receiving portion, and a bottom surface of the second partition wall is in contact with the other side of the first plate. a first plate; a second plate configured to comprise first and second device receiving portions (251, 253) thereinside, and coupled to one side of the first plate; first and second power semiconductor devices (121, 123) arranged in the first and second device receiving portions (251, 253); first and second input bus bars (410, 420) coupled to an outside of the second plate; a third plate configured to comprise third and fourth device receiving portions (351, 353) thereinside, and coupled to the other side of the first plate; third and fourth power semiconductor devices (125, 127) arranged in the third and fourth device receiving portions (351, 353); and third and fourth input bus bars (430, 440) coupled to an outside of the third plate, wherein the first plate and the second plate are sealed to shield the first and second device receiving portions (251, 253) from outside, wherein the first plate and the third plate are sealed to shield the third and fourth device receiving portions (351, 353) from the outside, wherein the second plate includes a first partition wall placed between the first device receiving portion and the second device receiving portion, and a bottom surface of the first partition wall is in contact with the one side of the first plate, and wherein the third plate includes a second partition wall placed between the third device receiving portion and the fourth device receiving portion, and a bottom surface of the second partition wall is in contact with the other side of the first plate.
Method for fabricating a semiconductor material wafer to be used for the integration of electronic and/or optical and/or optoelectronic devices, the method comprising: - providing a starting wafer of crystalline silicon; - on the starting wafer of crystalline silicon, epitaxially growing a buffer layer formed of an alloy of silicon and germanium; - epitaxially growing on the buffer layer a layer of a semiconductor material having an energy gap larger than that of the crystalline silicon making up the starting wafer, wherein the layer of a semiconductor material having an energy gap larger than that of the crystalline silicon is grown up to have a thickness suitable for forming a substrate for the integration therein of electronic and/or optical and/or optoelectronic devices, the method being characterized by comprising: - before epitaxially growing on the buffer layer a layer of a semiconductor material having an energy gap larger than that of the crystalline silicon, epitaxially growing on the buffer layer a cap layer of crystalline silicon. wherein the cap layer is a thin layer of strained silicon which adapts its own reticular pitch to that of the buffer layer below. - providing a starting wafer of crystalline silicon; - on the starting wafer of crystalline silicon, epitaxially growing a buffer layer formed of an alloy of silicon and germanium; - epitaxially growing on the buffer layer a layer of a semiconductor material having an energy gap larger than that of the crystalline silicon making up the starting wafer, wherein the layer of a semiconductor material having an energy gap larger than that of the crystalline silicon is grown up to have a thickness suitable for forming a substrate for the integration therein of electronic and/or optical and/or optoelectronic devices, - before epitaxially growing on the buffer layer a layer of a semiconductor material having an energy gap larger than that of the crystalline silicon, epitaxially growing on the buffer layer a cap layer of crystalline silicon.
A front fork comprising: a fork main body in which a vehicle body tube and an axle tube are slidably fitted; a suspension spring housed in the fork main body and interposed between the vehicle body tube and the axle tube; a cap configured to close an end portion of the vehicle body tube; a spring adjuster rotatably mounted on a position eccentric to the center of the cap as viewed in an axial direction, having a screw portion disposed in an outer periphery protruded into the fork main body; a plate in which the screw portion of the spring adjuster is screwed, configured to displace in the axial direction with respect to the cap by rotation of the spring adjuster so as to change support positions of the suspension spring; and a tubular member disposed in an outer periphery of the plate, characterised in that, the plate is brought into contact with an inner periphery of the tubular member at two points on both sides in a circumferential direction of the normal of the tubular member that passes through at least a mounting center of the spring adjuster in the Plate. a fork main body in which a vehicle body tube and an axle tube are slidably fitted; a suspension spring housed in the fork main body and interposed between the vehicle body tube and the axle tube; a cap configured to close an end portion of the vehicle body tube; a spring adjuster rotatably mounted on a position eccentric to the center of the cap as viewed in an axial direction, having a screw portion disposed in an outer periphery protruded into the fork main body; a plate in which the screw portion of the spring adjuster is screwed, configured to displace in the axial direction with respect to the cap by rotation of the spring adjuster so as to change support positions of the suspension spring; and a tubular member disposed in an outer periphery of the plate, characterised in that, the plate is brought into contact with an inner periphery of the tubular member at two points on both sides in a circumferential direction of the normal of the tubular member that passes through at least a mounting center of the spring adjuster in the Plate.
A method of forming a metal coated strip, such as a steel strip, that comprises: (a) passing the strip through a hot dip coating bath that contains Al, Zn, Si, and Mg and optionally other elements and forming a molten Al-Zn-Si-Mg alloy coating of 3-30 μm in thickness on the strip, with the coating bath composition comprising 20-95% Al, up to 5% Si, up to 10% Mg and the balance Zn with other elements in small amounts, typically less than 0.5% for each other element, (b) cooling the coated strip to solidify the molten Al-Zn-Si-Mg alloy on the strip and form a solidified coating having a microstructure that comprises alpha-Al phase dendrites, Zn-rich phases in interdendritic regions, and Mg 2 Si phase particles in interdendritic regions; and (c) heat treating the coated strip; and (d) cooling the heat treated strip, characterised in that the heat treatment step (c) is at a temperature of at least 300°C and less than 600°C for less than 30 minutes and forms (i) an Al-Zn phase solid solution from the as-cooled microstructure of alpha-Al phase dendrites and the Zn-rich interdendritic phases and (ii) globular-shaped Mg 2 Si phase particles dispersed in the Al-Zn phase solid solution, and further characterised in that the globular-shaped Mg 2 Si phase particles have a particle size of ≤ 2μm, and further characterized in that the cooling step (d) is water-cooled at a rate of at least 150°C/sec to maintain the size and the shape of the globular-shaped Mg 2 Si phase particles. (a) passing the strip through a hot dip coating bath that contains Al, Zn, Si, and Mg and optionally other elements and forming a molten Al-Zn-Si-Mg alloy coating of 3-30 μm in thickness on the strip, with the coating bath composition comprising 20-95% Al, up to 5% Si, up to 10% Mg and the balance Zn with other elements in small amounts, typically less than 0.5% for each other element, (b) cooling the coated strip to solidify the molten Al-Zn-Si-Mg alloy on the strip and form a solidified coating having a microstructure that comprises alpha-Al phase dendrites, Zn-rich phases in interdendritic regions, and Mg 2 Si phase particles in interdendritic regions; and (c) heat treating the coated strip; and (d) cooling the heat treated strip,
A method for minimizing corrosion in a flue gas wet scrubber process, the method comprising the following steps: burning fuel, thereby producing the flue gas, and passing the flue gas into the flue gas wet scrubber process, wherein the flue gas is treated with a scrubber liquor comprising: (i) a polymer derived from at least two monomers: acrylic-x and an alkylamine, and wherein said acrylic-x has the following formula: wherein X = OH and salts thereof or NHR 2 and wherein R 1 and R 2 is H or an alkyl or aryl group, wherein the weight average molecular weight of said polymer is between 500 to 200,000 measured by size exclusion chromatography and polysaccharide standards, and wherein said polymer is modified to contain a functional group capable of scavenging at least one metal-comprising composition, wherein the functional group is a dithiocarbamate salt group and wherein the polymer has between 55 to 80 mole % of said dithiocarbamate salt group relative to the total amines contained in the unmodified polymer. burning fuel, thereby producing the flue gas, and passing the flue gas into the flue gas wet scrubber process, wherein the flue gas is treated with a scrubber liquor comprising: (i) a polymer derived from at least two monomers: acrylic-x and an alkylamine, and wherein said acrylic-x has the following formula: wherein X = OH and salts thereof or NHR 2 and wherein R 1 and R 2 is H or an alkyl or aryl group, wherein the weight average molecular weight of said polymer is between 500 to 200,000 measured by size exclusion chromatography and polysaccharide standards, and wherein said polymer is modified to contain a functional group capable of scavenging at least one metal-comprising composition, wherein the functional group is a dithiocarbamate salt group and wherein the polymer has between 55 to 80 mole % of said dithiocarbamate salt group relative to the total amines contained in the unmodified polymer. (i) a polymer derived from at least two monomers: acrylic-x and an alkylamine, and wherein said acrylic-x has the following formula: wherein X = OH and salts thereof or NHR 2 and wherein R 1 and R 2 is H or an alkyl or aryl group, wherein the weight average molecular weight of said polymer is between 500 to 200,000 measured by size exclusion chromatography and polysaccharide standards, and wherein said polymer is modified to contain a functional group capable of scavenging at least one metal-comprising composition, wherein the functional group is a dithiocarbamate salt group and wherein the polymer has between 55 to 80 mole % of said dithiocarbamate salt group relative to the total amines contained in the unmodified polymer.
A process for preparing a C 3-6 (hydro)fluoroalkene comprising dehydrohalogenating a C 3-6 hydro(halo)fluoroalkane in the presence of a zinc/chromia catalyst, wherein the catalyst is amorphous, or from 0.1 to 50 % by weight of the catalyst is in the form of one or more crystalline compounds of chromium and/or one or more crystalline compounds of zinc, wherein the process is carried out at a temperature of greater than 300°C.
A display screen, comprising a polarizer and a display panel, the polarizer comprising: a base layer; and a polarizing layer, attached to the base layer, wherein the polarizing layer comprises, in a same plane, a first region, a second region and a third region located between the first region and the second region, wherein the first region has a transmittance lower than a transmittance of the second region, and the third region has a transmittance between the transmittance of the first region and the transmittance of the second region; wherein the display panel comprises a substrate and a display layer, disposed above the substrate and comprising: a first display region corresponding to the first region; a second display region corresponding to the second region and having a light transmittance higher than that of the first display region; and a third display region corresponding to the third region and located between the first display region and the second display region, wherein sizes of sub-pixels in the third display region are larger than that of the sub-pixels in the first display region but smaller than that of the sub-pixels in the second display region. a base layer; and a polarizing layer, attached to the base layer, wherein the polarizing layer comprises, in a same plane, a first region, a second region and a third region located between the first region and the second region, wherein the first region has a transmittance lower than a transmittance of the second region, and the third region has a transmittance between the transmittance of the first region and the transmittance of the second region; wherein the display panel comprises a substrate and a display layer, disposed above the substrate and comprising: a first display region corresponding to the first region; a second display region corresponding to the second region and having a light transmittance higher than that of the first display region; and a third display region corresponding to the third region and located between the first display region and the second display region, wherein sizes of sub-pixels in the third display region are larger than that of the sub-pixels in the first display region but smaller than that of the sub-pixels in the second display region. a first display region corresponding to the first region; a second display region corresponding to the second region and having a light transmittance higher than that of the first display region; and a third display region corresponding to the third region and located between the first display region and the second display region, wherein sizes of sub-pixels in the third display region are larger than that of the sub-pixels in the first display region but smaller than that of the sub-pixels in the second display region.
A boron nitride agglomerated powder comprising: an agglomerate fracture strength to tap density ratio not less than 11 MPa·cc/g and/or a fracture strength to envelope density ratio not less than 6.5 MPa·cc/g. an agglomerate fracture strength to tap density ratio not less than 11 MPa·cc/g and/or a fracture strength to envelope density ratio not less than 6.5 MPa·cc/g.
Method for transferring a decorative portion of an embossing film onto a substrate by means of an embossing die, wherein the embossing film comprises a carrier film and a transfer layer arranged on the carrier film, characterised in that the method comprises the following steps: a) providing the embossing film; b) embossing or pressing at least one compression portion, which is spaced apart from the edge of the decorative portion, into the transfer layer, wherein, by forming the compression portion in the transfer layer, a defined break line is formed, whereby an intended breaking point is formed at a defined position, which breaks easily in the event of bending stress; c) embossing the decorative portion onto the substrate; d) removing the remaining embossing film from the substrate embossed with the decorative portion, wherein the transfer layer breaks at the intended breaking point formed by the compression portion due to bending stress, which is applied by removing the carrier film at a removal angle in relation to the substrate; wherein a pressing pressure p k is applied in method step b), which is greater than the pressing pressure p p formed in method step c). a) providing the embossing film; b) embossing or pressing at least one compression portion, which is spaced apart from the edge of the decorative portion, into the transfer layer, wherein, by forming the compression portion in the transfer layer, a defined break line is formed, whereby an intended breaking point is formed at a defined position, which breaks easily in the event of bending stress; c) embossing the decorative portion onto the substrate; d) removing the remaining embossing film from the substrate embossed with the decorative portion, wherein the transfer layer breaks at the intended breaking point formed by the compression portion due to bending stress, which is applied by removing the carrier film at a removal angle in relation to the substrate;