Method for creating a selective doping structure in a semiconductor substrate for the production of a photovoltaic solar cell, the selective doping structure being formed at least on a doping side of the semiconductor substrate, wherein on the doping side at least one planar low-doping region of a first doping profile is created in the semiconductor substrate and at least one local high-doping region of a second doping profile is created within the first low-doping region, the low-doping region and the high-doping region being formed with the same doping type, and the high-doping region having a lower cross-conduction resistance than the low-doping region, wherein the method comprises the following method steps: A application of a dopant-containing doping layer to the doping side of the semiconductor substrate, B local heating of a melt region of the doping layer and of a melt region of the semiconductor substrate, which melt region is located below the doping layer, in such a way that in a local region there is briefly formed a molten mixture of at least the melt region of the doping layer and the melt region of the semi-conductor substrate, wherein dopant diffuses from the doping layer into the molten semiconductor substrate by means of liquid-liquid diffusion so that after the molten mixture has solidified the high-doping region is created, C creation of the planar low-doping region by global heating of the semiconductor substrate in such a way that dopant diffuses from the doping layer into the semiconductor substrate, D removal of the doping layer, characterised in that the method further comprises the following method step: E removal of a layer of the semiconductor substrate on the doping side in such a way that, in a method step E1, a portion of the low-doping region and of the high-doping region that is close to the surface is removed, the method steps being carried out in the sequence A, B, C, D, E or A, C, B, D, E, with or without interposition of further intermediate steps, the method steps A to E are carried out without interposition of masking steps and in method step E a layer having a thickness in the range of from 50 nm to 200 nm is removed. A application of a dopant-containing doping layer to the doping side of the semiconductor substrate, B local heating of a melt region of the doping layer and of a melt region of the semiconductor substrate, which melt region is located below the doping layer, in such a way that in a local region there is briefly formed a molten mixture of at least the melt region of the doping layer and the melt region of the semi-conductor substrate, wherein dopant diffuses from the doping layer into the molten semiconductor substrate by means of liquid-liquid diffusion so that after the molten mixture has solidified the high-doping region is created, C creation of the planar low-doping region by global heating of the semiconductor substrate in such a way that dopant diffuses from the doping layer into the semiconductor substrate, D removal of the doping layer, E removal of a layer of the semiconductor substrate on the doping side in such a way that, in a method step E1, a portion of the low-doping region and of the high-doping region that is close to the surface is removed,