A method for manufacturing a light emitting device, comprising: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate, the multilayer body having an upper layer and a lower layer; forming a p-side electrode on a surface of the upper layer and forming an n-side electrode on a surface of the lower layer; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having first and second openings (20a,20b) on the p-side electrode and the n-side electrode respectively, said second surface including said surface of the upper layer and said surface of the lower layer; forming a p-side and an n-side extraction electrode on the dielectric film and an exposed surface of the first and second openings (20a, 20b), the forming of the p-side extraction electrode and the forming of the n-side extraction electrode including forming a seed metal on the dielectric film and an exposed surface of the first and the second openings (20a, 20b) and forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; forming a resin in a space from which the seed metal is removed; and removing the translucent substrate from the multilayer body supported on the p-side extraction electrode, the n-side extraction electrode and the resin, the p-side extraction electrode and the n-side extraction electrode not being bonded to a mounting member. forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate, the multilayer body having an upper layer and a lower layer; forming a p-side electrode on a surface of the upper layer and forming an n-side electrode on a surface of the lower layer; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having first and second openings (20a,20b) on the p-side electrode and the n-side electrode respectively, said second surface including said surface of the upper layer and said surface of the lower layer; forming a p-side and an n-side extraction electrode on the dielectric film and an exposed surface of the first and second openings (20a, 20b), the forming of the p-side extraction electrode and the forming of the n-side extraction electrode including forming a seed metal on the dielectric film and an exposed surface of the first and the second openings (20a, 20b) and forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; forming a resin in a space from which the seed metal is removed; and removing the translucent substrate from the multilayer body supported on the p-side extraction electrode, the n-side extraction electrode and the resin, the p-side extraction electrode and the n-side extraction electrode not being bonded to a mounting member.