A light emitting device comprising: a light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; a photoluminescent structure disposed on the LED semiconductor die, comprising an upper surface, a lower surface opposite to the upper surface and an edge surface extending between the upper surface of the photoluminescent structure and the lower surface of the photoluminescent structure, wherein the upper surface of the photoluminescent structure is larger than the lower surface of the photoluminescent structure, such that the edge surface of the photoluminescent structure is a beveled edge surface, and the lower surface of the photoluminescent structure is adjacent to the upper surface of the LED semiconductor die, wherein the photoluminescent structure comprises a phosphor layer and at least one transparent layer, which is disposed on top of the phosphor layer; and a reflector, wherein: a lower inner edge surface of the reflector is directly adjoining the edge surface of the LED semiconductor die and an upper inner beveled edge surface of the reflector is directly adjoining the beveled edge surface of the photoluminescent structure; a lower surface of the reflector adjoins the lower surface of the LED semiconductor die; and a height, in a cross-sectional view, of an upper rim surface of the reflector is lower than that of the upper surface of the photoluminescent structure and is higher than that of an upper surface of the phosphor layer. a light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; a photoluminescent structure disposed on the LED semiconductor die, comprising an upper surface, a lower surface opposite to the upper surface and an edge surface extending between the upper surface of the photoluminescent structure and the lower surface of the photoluminescent structure, wherein the upper surface of the photoluminescent structure is larger than the lower surface of the photoluminescent structure, such that the edge surface of the photoluminescent structure is a beveled edge surface, and the lower surface of the photoluminescent structure is adjacent to the upper surface of the LED semiconductor die, wherein the photoluminescent structure comprises a phosphor layer and at least one transparent layer, which is disposed on top of the phosphor layer; and a reflector, wherein: a lower inner edge surface of the reflector is directly adjoining the edge surface of the LED semiconductor die and an upper inner beveled edge surface of the reflector is directly adjoining the beveled edge surface of the photoluminescent structure; a lower surface of the reflector adjoins the lower surface of the LED semiconductor die; and a height, in a cross-sectional view, of an upper rim surface of the reflector is lower than that of the upper surface of the photoluminescent structure and is higher than that of an upper surface of the phosphor layer. a lower inner edge surface of the reflector is directly adjoining the edge surface of the LED semiconductor die and an upper inner beveled edge surface of the reflector is directly adjoining the beveled edge surface of the photoluminescent structure; a lower surface of the reflector adjoins the lower surface of the LED semiconductor die; and a height, in a cross-sectional view, of an upper rim surface of the reflector is lower than that of the upper surface of the photoluminescent structure and is higher than that of an upper surface of the phosphor layer.