A measurement method for estimating temperatures of a power semi-conductor module comprising a single Metal-Oxide-Semiconductor, a single Metal-insulator-Semiconductor or a set of Metal-Oxide-Semiconductors or Metal-insulator-Semiconductor paralleled connected, said method comprising: - at least one first series of operations, during which the module is in a reference state, including a. injecting a positive current I g,ref from the emitter/source to the gate of said module, an initial voltage V 0,ref of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, b. measuring the voltage V ig,ref (t) across the current source, c. stop the current injection I g,ref when the voltage of the module V ge becomes inferior to the flatband voltage V fb, - at least one second series of operations, during which the module is in a operational state, including d. injecting a positive current I g,op from the emitter/source to the gate of said module, an initial voltage V 0,op of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, e. measuring the voltage V ig,op (t) across the current source, f. stop the current injection I g,op when the voltage of the module V ge becomes inferior to the flatband voltage V fb, then, - at least one third series of operations including g. comparing the voltages V ig,ref (t) and V ig,op (t) measured respectively during one said first series and one said second series, h. deducing, from the comparison, a temperature dispersion T j,dev across the module. - at least one first series of operations, during which the module is in a reference state, including a. injecting a positive current I g,ref from the emitter/source to the gate of said module, an initial voltage V 0,ref of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, b. measuring the voltage V ig,ref (t) across the current source, c. stop the current injection I g,ref when the voltage of the module V ge becomes inferior to the flatband voltage V fb, a. injecting a positive current I g,ref from the emitter/source to the gate of said module, an initial voltage V 0,ref of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, b. measuring the voltage V ig,ref (t) across the current source, c. stop the current injection I g,ref when the voltage of the module V ge becomes inferior to the flatband voltage V fb, - at least one second series of operations, during which the module is in a operational state, including d. injecting a positive current I g,op from the emitter/source to the gate of said module, an initial voltage V 0,op of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, e. measuring the voltage V ig,op (t) across the current source, f. stop the current injection I g,op when the voltage of the module V ge becomes inferior to the flatband voltage V fb, then, d. injecting a positive current I g,op from the emitter/source to the gate of said module, an initial voltage V 0,op of the module, i.e. a gate-emitter/source voltage (V ge), being superior to a flatband voltage V fb, e. measuring the voltage V ig,op (t) across the current source, f. stop the current injection I g,op when the voltage of the module V ge becomes inferior to the flatband voltage V fb, then, - at least one third series of operations including g. comparing the voltages V ig,ref (t) and V ig,op (t) measured respectively during one said first series and one said second series, h. deducing, from the comparison, a temperature dispersion T j,dev across the module. g. comparing the voltages V ig,ref (t) and V ig,op (t) measured respectively during one said first series and one said second series, h. deducing, from the comparison, a temperature dispersion T j,dev across the module.