A light emitting device comprising: a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer (120, 220), a second conductivity-type semiconductor layer (140, 240) and an active layer (130, 230) disposed between the first conductivity-type semiconductor layer (120, 220) and the second conductivity-type semiconductor layer (140, 240); a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor; a transparent electrode layer formed on the second conductivity-type semiconductor layer of the first nitride semiconductor; and a current blocking layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor, wherein the first nitride semiconductor is bonded to the second nitride semiconductor through the connection layer formed on the second nitride semiconductor, and the light emitting device further comprises electrodes (270A, 270B, 270C) formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor, wherein the current blocking layer is formed within the connection layer, and wherein the current blocking layer is vertically overlapped with the electrode formed on the second conductivity-type semiconductor layer of the first nitride semiconductor, and the connection layer is vertically overlapped with the transparent electrode layer. a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer (120, 220), a second conductivity-type semiconductor layer (140, 240) and an active layer (130, 230) disposed between the first conductivity-type semiconductor layer (120, 220) and the second conductivity-type semiconductor layer (140, 240); a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor; a transparent electrode layer formed on the second conductivity-type semiconductor layer of the first nitride semiconductor; and a current blocking layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor, wherein the first nitride semiconductor is bonded to the second nitride semiconductor through the connection layer formed on the second nitride semiconductor, and the light emitting device further comprises electrodes (270A, 270B, 270C) formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor, wherein the current blocking layer is formed within the connection layer, and wherein the current blocking layer is vertically overlapped with the electrode formed on the second conductivity-type semiconductor layer of the first nitride semiconductor, and the connection layer is vertically overlapped with the transparent electrode layer.