A capacitive coupled Rf vacuum etching apparatus constructed for etch operating under predetermined conditions and comprising: • a vacuum recipient -also addressed as enclosure- • in said vacuum recipient a plasma space in operational contact solely with one electrode arrangement consisting of a first electrode arrangement and of a second electrode arrangement (45, 19c,9) facing said first electrode arrangement; • said first electrode arrangement defining a first electrode surface exposed to said plasma space; • said second electrode arrangement defining a second electrode surface (9i, 19i) exposed to said plasma space, and comprising the surface of a workpiece carrier; wherein • the first electrode surface is larger than the second electrode surface; • said first electrode arrangement is electrically connected to an output arrangement of a Rf generator arrangement, generating a plasma supply Rf signal and is capacitively coupled to the Rf generator arrangement; • said second electrode arrangement is, at least during etching operation, electrically connected to a system ground tab (23, 1023); characterised in that: • said Rf generator arrangement generates at least one first plasma supply signal at a very high frequency (vhf) at said output arrangement and at least one second plasma supply signal at a high frequency (hf) lower than said very high frequency at said output arrangement, • said first electrode arrangement (29,31,50) is electrically connected via a match box arrangement to said output arrangement and is electrically supplied, in operation, by said first and by said second plasma supply signals. • a vacuum recipient -also addressed as enclosure- • in said vacuum recipient a plasma space in operational contact solely with one electrode arrangement consisting of a first electrode arrangement and of a second electrode arrangement (45, 19c,9) facing said first electrode arrangement; • said first electrode arrangement defining a first electrode surface exposed to said plasma space; • said second electrode arrangement defining a second electrode surface (9i, 19i) exposed to said plasma space, and comprising the surface of a workpiece carrier; wherein • the first electrode surface is larger than the second electrode surface; • said first electrode arrangement is electrically connected to an output arrangement of a Rf generator arrangement, generating a plasma supply Rf signal and is capacitively coupled to the Rf generator arrangement; • said second electrode arrangement is, at least during etching operation, electrically connected to a system ground tab (23, 1023); • said second electrode arrangement is, at least during etching operation, electrically connected to a system ground tab (23, 1023); • said Rf generator arrangement generates at least one first plasma supply signal at a very high frequency (vhf) at said output arrangement and at least one second plasma supply signal at a high frequency (hf) lower than said very high frequency at said output arrangement, • said first electrode arrangement (29,31,50) is electrically connected via a match box arrangement to said output arrangement and is electrically supplied, in operation, by said first and by said second plasma supply signals.