A flat panel display, comprising: an insulating substrate; a thin film transistor formed on the insulating substrate, the thin film transistor including a semiconductor layer having source and drain regions (411, 415), a first insulating layer having contact holes (431, 435) for exposing a portion of the source and drain regions (411, 415) and source and drain electrodes (441, 445) connected to the source and drain regions (411, 415) through the contact holes (431, 435); a second insulating layer formed on the insulating substrate and having a via hole for exposing one of the source and drain electrodes (441, 445); an electroluminesence element formed on the second insulating layer and connected to one electrode of the thin film transistor through the via hole, and having a lower electrode, an organic film layer comprising at least an organic emission layer, and an upper electrode; and a taper reducing layer formed on the lower electrode, on the second insulating layer and on the source and drain electrodes (441, 445), wherein the taper reducing layer is a conductive organic layer having a charge transporting capability, and wherein the edge of the lower electrode is covered by the taper reducing layer, characterized in that the taper reducing layer is formed between the lower electrode and the organic emission layer, and a taper angle of the taper reducing layer in a position corresponding to the contact hole in which the other one of the source and drain electrodes (441, 445) which is not connected with the electroluminesence element is formed has a first taper angle (θ43) smaller than a taper angle of the corresponding contact hole, a taper angle of the taper reducing layer in a position corresponding to the via hole (θ44) has a second taper angle smaller than a taper angle of the via hole, and a taper angle of the taper reducing layer at an edge of the lower electrode has a third taper angle (θ45) smaller than a taper angle of the edge of the lower electrode, wherein the taper angle of the contact hole in which the other one of the source and drain electrodes (441, 445) which is not connected with the electroluminesence element is formed, the taper angle of the via hole and the taper angle at an edge of the lower electrode are planarized by the taper reducing layer, and wherein the first, second, and third taper angles (θ43, θ44, θ45) are greater than zero degrees. an insulating substrate; a thin film transistor formed on the insulating substrate, the thin film transistor including a semiconductor layer having source and drain regions (411, 415), a first insulating layer having contact holes (431, 435) for exposing a portion of the source and drain regions (411, 415) and source and drain electrodes (441, 445) connected to the source and drain regions (411, 415) through the contact holes (431, 435); a second insulating layer formed on the insulating substrate and having a via hole for exposing one of the source and drain electrodes (441, 445); an electroluminesence element formed on the second insulating layer and connected to one electrode of the thin film transistor through the via hole, and having a lower electrode, an organic film layer comprising at least an organic emission layer, and an upper electrode; and a taper reducing layer formed on the lower electrode, on the second insulating layer and on the source and drain electrodes (441, 445), wherein the taper reducing layer is a conductive organic layer having a charge transporting capability, and wherein the edge of the lower electrode is covered by the taper reducing layer, characterized in that the taper reducing layer is formed between the lower electrode and the organic emission layer, and a taper angle of the taper reducing layer in a position corresponding to the contact hole in which the other one of the source and drain electrodes (441, 445) which is not connected with the electroluminesence element is formed has a first taper angle (θ43) smaller than a taper angle of the corresponding contact hole, a taper angle of the taper reducing layer in a position corresponding to the via hole (θ44) has a second taper angle smaller than a taper angle of the via hole, and a taper angle of the taper reducing layer at an edge of the lower electrode has a third taper angle (θ45) smaller than a taper angle of the edge of the lower electrode, wherein the taper angle of the contact hole in which the other one of the source and drain electrodes (441, 445) which is not connected with the electroluminesence element is formed, the taper angle of the via hole and the taper angle at an edge of the lower electrode are planarized by the taper reducing layer, and wherein the first, second, and third taper angles (θ43, θ44, θ45) are greater than zero degrees.