A magnetic device, comprising a first synthetic antiferromagnetic structure in a first plane, the synthetic antiferromagnetic structure including a magnetic reference layer, the magnetic reference layer having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction; a non-magnetic tunnel barrier layer in a second plane and disposed over the magnetic reference layer; a free magnetic layer in a third plane and disposed over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can precess from a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction; a non-magnetic spacer in a fourth plane and disposed over the free magnetic layer, the non-magnetic spacer comprising a film of MgO having a thickness ranging from 0.5 to 1.5 nanometers; a precessional spin current magnetic layer in a fifth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by the non-magnetic spacer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component in the fifth plane which can freely rotate in any magnetic direction, the precessional spin current magnetic layer comprising an Fe layer comprising a film of Fe having a thickness ranging from 0.5 to 2.0 nanometers, an Ru layer comprising a film of Ru having a thickness ranging from 0.4 to 5.0 nanometers, and a face centered cubic, fcc, crystal structure layer comprising a film of NiFe having a thickness ranging from 0.5 to 5.0 nanometers, the Fe layer being disposed over the non-magnetic spacer, the Ru layer being disposed over the Fe layer, and the face centered cubic crystal structure layer being disposed over the Ru layer; a capping layer in a sixth plane and disposed over the precessional spin current magnetic layer; wherein, when an electrical current is directed through the capping layer, the precessional spin current magnetic layer, the non-magnetic spacer, the free magnetic layer, the non-magnetic tunnel barrier layer, and the magnetic reference layer, spins of the electrons of the electrical current are aligned in the magnetic direction of the precessional spin current magnetic layer; and wherein the magnetization direction of the precessional spin current magnetic layer is free to follow precession of the magnetization direction of the free magnetic layer, thereby causing spin transfer torque to assist switching of the magnetization vector of the free magnetic layer. a first synthetic antiferromagnetic structure in a first plane, the synthetic antiferromagnetic structure including a magnetic reference layer, the magnetic reference layer having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction; a non-magnetic tunnel barrier layer in a second plane and disposed over the magnetic reference layer; a free magnetic layer in a third plane and disposed over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can precess from a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction; a non-magnetic spacer in a fourth plane and disposed over the free magnetic layer, the non-magnetic spacer comprising a film of MgO having a thickness ranging from 0.5 to 1.5 nanometers; a precessional spin current magnetic layer in a fifth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by the non-magnetic spacer, the precessional spin current magnetic layer having a magnetization vector with a magnetization component in the fifth plane which can freely rotate in any magnetic direction, the precessional spin current magnetic layer comprising an Fe layer comprising a film of Fe having a thickness ranging from 0.5 to 2.0 nanometers, an Ru layer comprising a film of Ru having a thickness ranging from 0.4 to 5.0 nanometers, and a face centered cubic, fcc, crystal structure layer comprising a film of NiFe having a thickness ranging from 0.5 to 5.0 nanometers, the Fe layer being disposed over the non-magnetic spacer, the Ru layer being disposed over the Fe layer, and the face centered cubic crystal structure layer being disposed over the Ru layer; a capping layer in a sixth plane and disposed over the precessional spin current magnetic layer; wherein, when an electrical current is directed through the capping layer, the precessional spin current magnetic layer, the non-magnetic spacer, the free magnetic layer, the non-magnetic tunnel barrier layer, and the magnetic reference layer, spins of the electrons of the electrical current are aligned in the magnetic direction of the precessional spin current magnetic layer; and wherein the magnetization direction of the precessional spin current magnetic layer is free to follow precession of the magnetization direction of the free magnetic layer, thereby causing spin transfer torque to assist switching of the magnetization vector of the free magnetic layer.