A semiconductor device, comprising: a drift region (220, 320, 420, 520) having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact (236, 536) on the upper portion of the drift region; and a second contact (232, 532) on the lower portion of the drift region, wherein the drift region includes: a first pillar (224, 324, 424, 524, 724, 774) that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle that is within +/-1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes; and a second pillar (226, 326, 426, 526, 726, 776) that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar, wherein the second pillar has a first sidewall that is slanted at an angle that is +/- 1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes, wherein the first sidewall of the first pillar is slanted at the same angle as the first sidewall of the second pillar, wherein the first sidewalls of the first and second pillars are slanted with respect to the upper surface of the silicon carbide drift layer at an angle of between 6° and 35°, wherein the first sidewall of the first pillar faces and directly contacts the first sidewall of the second pillar, and wherein the first pillar comprises an implanted pillar of the first conductivity type and the second type pillar comprises an implanted pillar of the second conductivity type that directly contacts the first pillar, thereby forming a p-n junction in the drift layer that is part of a superjunction structure within the drift region. a drift region (220, 320, 420, 520) having an upper portion and a lower portion, the drift region comprising silicon carbide; a first contact (236, 536) on the upper portion of the drift region; and a second contact (232, 532) on the lower portion of the drift region, wherein the drift region includes: a first pillar (224, 324, 424, 524, 724, 774) that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle that is within +/-1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes; and a second pillar (226, 326, 426, 526, 726, 776) that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar, wherein the second pillar has a first sidewall that is slanted at an angle that is +/- 1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes, wherein the first sidewall of the first pillar is slanted at the same angle as the first sidewall of the second pillar, wherein the first sidewalls of the first and second pillars are slanted with respect to the upper surface of the silicon carbide drift layer at an angle of between 6° and 35°, wherein the first sidewall of the first pillar faces and directly contacts the first sidewall of the second pillar, and wherein the first pillar comprises an implanted pillar of the first conductivity type and the second type pillar comprises an implanted pillar of the second conductivity type that directly contacts the first pillar, thereby forming a p-n junction in the drift layer that is part of a superjunction structure within the drift region. a first pillar (224, 324, 424, 524, 724, 774) that is doped with first conductivity type impurities, the first pillar having a first sidewall that is slanted at an angle that is within +/-1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes; and a second pillar (226, 326, 426, 526, 726, 776) that is doped with second conductivity type impurities that are opposite the first conductivity type impurities adjacent the first pillar, wherein the second pillar has a first sidewall that is slanted at an angle that is +/- 1.5° of one of the <11-23>, <-1-123>, <1-213>, <-12-13>, <2-1-13> and <-2113> crystallographic axes, wherein the first sidewall of the first pillar is slanted at the same angle as the first sidewall of the second pillar, wherein the first sidewalls of the first and second pillars are slanted with respect to the upper surface of the silicon carbide drift layer at an angle of between 6° and 35°, wherein the first sidewall of the first pillar faces and directly contacts the first sidewall of the second pillar, and wherein the first pillar comprises an implanted pillar of the first conductivity type and the second type pillar comprises an implanted pillar of the second conductivity type that directly contacts the first pillar, thereby forming a p-n junction in the drift layer that is part of a superjunction structure within the drift region.