Method for manufacturing a piezoelectric nanogenerator (110, 110', 110", 110"', 110""), characterised in that it comprises the following steps: a) providing a membrane made of polarised β-PVDF or polarised PVDF-TrFe copolymer therefore having piezoelectric properties, said membrane moreover having two external main faces (11, 12) separated by a membrane thickness (e); b) irradiating said membrane via at least one of the two external main faces (11, 12) thereof through the entire thickness of said membrane with heavy ions having a fluence of between 10 3 ions/cm 2 and 10 10 ions/cm 2, as a result of which a membrane containing latent traces of the passage of the heavy ions through the entirety of the thickness of it is obtained; c) chemically revealing the latent traces over a predetermined duration to maintain a defect zone belonging to the latent trace, as a result of which a nanostructured membrane (102, 102', 102") with nanopores (13, 13' 13") is obtained comprising, around each nanopore (13, 13' 13"), a defect zone; d) depositing a layer of an electrically conductive material on one of the two main external faces (11, 12) of said membrane (102, 102', 102"); e) electrodepositing a semiconductor or electrically conductive material in the nanopores (13, 13', 13"), the electrodeposition being stopped before the nanopores (13, 13' 13") have been completely filled, as a result of which a nanostructured membrane (103, 103', 103") is obtained having nanowires (15, 15', 15") partially filling the nanopores (13, 13' 13"); and f) depositing a layer of an electrically conductive material on the other of the two main external faces (11, 12), which therefore is not in contact with the nanowires. a) providing a membrane made of polarised β-PVDF or polarised PVDF-TrFe copolymer therefore having piezoelectric properties, said membrane moreover having two external main faces (11, 12) separated by a membrane thickness (e); b) irradiating said membrane via at least one of the two external main faces (11, 12) thereof through the entire thickness of said membrane with heavy ions having a fluence of between 10 3 ions/cm 2 and 10 10 ions/cm 2, as a result of which a membrane containing latent traces of the passage of the heavy ions through the entirety of the thickness of it is obtained; c) chemically revealing the latent traces over a predetermined duration to maintain a defect zone belonging to the latent trace, as a result of which a nanostructured membrane (102, 102', 102") with nanopores (13, 13' 13") is obtained comprising, around each nanopore (13, 13' 13"), a defect zone; d) depositing a layer of an electrically conductive material on one of the two main external faces (11, 12) of said membrane (102, 102', 102"); e) electrodepositing a semiconductor or electrically conductive material in the nanopores (13, 13', 13"), the electrodeposition being stopped before the nanopores (13, 13' 13") have been completely filled, as a result of which a nanostructured membrane (103, 103', 103") is obtained having nanowires (15, 15', 15") partially filling the nanopores (13, 13' 13"); and f) depositing a layer of an electrically conductive material on the other of the two main external faces (11, 12), which therefore is not in contact with the nanowires.