Integrated circuit comprising a semiconductive active layer that is separated from a semiconductive substrate layer by a buried layer of insulating material, comprising PMOS and NMOS transistors, characterized in that it comprises: - first and second transistors of one and the same type, PMOS or NMOS; - first and second ground planes that are positioned plumb with the first and second transistors, respectively, between the buried layer of insulating material and the silicon substrate layer; and in that: - the first transistor has a type of doping of its ground plane that is the opposite of that of its source, and has a first threshold voltage (Vth); - the second transistor has a type of doping of its ground plane that is identical to that of its source, and has a second threshold voltage (Vtl); - the first threshold voltage is a function of the potential difference applied between the source and the ground plane of the first transistor; - the second threshold voltage is a function of the potential difference applied between the source and the ground plane of the second transistor; - the first and second threshold voltages are able to vary within a first and a second range of voltages, respectively, in the case in which the potential difference between the ground plane and the source of the first or second transistor varies between a zero value and a value that is equal to the supply voltage of the circuit; - the thickness of the layer of insulating material is sufficiently fine for the maximum value of the first range to be higher than the minimum value of the first range by at least 10%, and the minimum value of the second range to be lower than the maximum value of the second range by at least 10%. - first and second transistors of one and the same type, PMOS or NMOS; - first and second ground planes that are positioned plumb with the first and second transistors, respectively, between the buried layer of insulating material and the silicon substrate layer; - the first transistor has a type of doping of its ground plane that is the opposite of that of its source, and has a first threshold voltage (Vth); - the second transistor has a type of doping of its ground plane that is identical to that of its source, and has a second threshold voltage (Vtl); - the first threshold voltage is a function of the potential difference applied between the source and the ground plane of the first transistor; - the second threshold voltage is a function of the potential difference applied between the source and the ground plane of the second transistor; - the first and second threshold voltages are able to vary within a first and a second range of voltages, respectively, in the case in which the potential difference between the ground plane and the source of the first or second transistor varies between a zero value and a value that is equal to the supply voltage of the circuit; - the thickness of the layer of insulating material is sufficiently fine for the maximum value of the first range to be higher than the minimum value of the first range by at least 10%, and the minimum value of the second range to be lower than the maximum value of the second range by at least 10%.