A photoelectric conversion device comprising: an avalanche multiplying photodiode; a signal generation unit that includes a control unit and a cathode voltage control unit having a p-channel MOS transistor configured to control a voltage applied to a cathode terminal of the photodiode; wherein an anode terminal of the photodiode is connected to a first power supply voltage (Va), a cathode terminal of the photodiode is connected to a second power supply voltage (Vdd) via the transistor such that the photodiode is reverse biased by the first power supply voltage and the second power supply voltage; the photodiode is configured to generate an avalanche current by incidence of a photon to the photodiode if the control unit applies a fourth power supply voltage (Vqnc) to the gate of the transistor and to stop the generating the avalanche current if the control unit applies a third power supply voltage (Vdd) to the gate of the transistor; the control unit is configured to generate a photon detection pulse based on the avalanche current; and the photoelectric conversion device further comprises a counter configured to count the photon detection pulse generated by the control unit of the signal generation unit, characterized in that the counter is configured to output a setting value detection signal at a time when a count value of the photon detection pulse reaches a predetermined setting value, the control unit is connected to the third power supply voltage (Vdd) and the fourth power supply voltage (Vqnc) lower than the third power supply voltage, and the control unit is configured to output the third power supply voltage (Vdd) to the gate of the transistor if the control unit receives the setting value detection signal such that the cathode terminal of the photodiode is no longer recharged even when a photon enters the photodiode, and to output the fourth power supply voltage (Vqnc) to the gate of the transistor if the control unit does not receive the setting value detection signal. an avalanche multiplying photodiode; a signal generation unit that includes a control unit and a cathode voltage control unit having a p-channel MOS transistor configured to control a voltage applied to a cathode terminal of the photodiode; wherein an anode terminal of the photodiode is connected to a first power supply voltage (Va), a cathode terminal of the photodiode is connected to a second power supply voltage (Vdd) via the transistor such that the photodiode is reverse biased by the first power supply voltage and the second power supply voltage; the photodiode is configured to generate an avalanche current by incidence of a photon to the photodiode if the control unit applies a fourth power supply voltage (Vqnc) to the gate of the transistor and to stop the generating the avalanche current if the control unit applies a third power supply voltage (Vdd) to the gate of the transistor; the control unit is configured to generate a photon detection pulse based on the avalanche current; and the photoelectric conversion device further comprises a counter configured to count the photon detection pulse generated by the control unit of the signal generation unit, characterized in that the counter is configured to output a setting value detection signal at a time when a count value of the photon detection pulse reaches a predetermined setting value, the control unit is connected to the third power supply voltage (Vdd) and the fourth power supply voltage (Vqnc) lower than the third power supply voltage, and the control unit is configured to output the third power supply voltage (Vdd) to the gate of the transistor if the control unit receives the setting value detection signal such that the cathode terminal of the photodiode is no longer recharged even when a photon enters the photodiode, and to output the fourth power supply voltage (Vqnc) to the gate of the transistor if the control unit does not receive the setting value detection signal.