mhurhangee/ep-ind-claims huggingface dataset:
A method for preparing a bundle-type carbon nanotube having a bulk density of 25 to 45 kg/m 3, and satisfying the following Equations 1 and 2: 1.0 ≤ x / y ≤ 3.0 1.3 ≤ z / x ≤ 2.0 wherein x is a number representing a bulk density (units: kg/m 3) of the bundle-type carbon nanotube, y is a number representing a production yield of the bundle-type carbon nanotube, ranging from 10 to 40, and z is a number representing a tap density (units: kg/m 3) of the bundle-type carbon nanotube, wherein the bulk density is measured according to ASTM B329, and the tap density is measured according to ASTM B527-06 said method comprising: preparing a mixture comprising an organic acid and a vanadium-based compound in a molar ratio of 1:(1 to 30); preparing a catalyst precursor comprising the mixture and a cobalt-based compound; performing first thermal treatment of aluminum hydroxide to prepare a support; supporting the catalyst precursor in the support and performing second thermal treatment under an internal pressure of 0.1 to 2 bar to prepare a supported catalyst; and reacting the supported catalyst with a carbon-based compound, the pressure being an internal pressure of the second thermal treatment container, additionally applied with atmospheric pressure. wherein x is a number representing a bulk density (units: kg/m 3) of the bundle-type carbon nanotube, y is a number representing a production yield of the bundle-type carbon nanotube, ranging from 10 to 40, and z is a number representing a tap density (units: kg/m 3) of the bundle-type carbon nanotube, wherein the bulk density is measured according to ASTM B329, and the tap density is measured according to ASTM B527-06 said method comprising: preparing a mixture comprising an organic acid and a vanadium-based compound in a molar ratio of 1:(1 to 30); preparing a catalyst precursor comprising the mixture and a cobalt-based compound; performing first thermal treatment of aluminum hydroxide to prepare a support; supporting the catalyst precursor in the support and performing second thermal treatment under an internal pressure of 0.1 to 2 bar to prepare a supported catalyst; and reacting the supported catalyst with a carbon-based compound, preparing a mixture comprising an organic acid and a vanadium-based compound in a molar ratio of 1:(1 to 30); preparing a catalyst precursor comprising the mixture and a cobalt-based compound; performing first thermal treatment of aluminum hydroxide to prepare a support; supporting the catalyst precursor in the support and performing second thermal treatment under an internal pressure of 0.1 to 2 bar to prepare a supported catalyst; and reacting the supported catalyst with a carbon-based compound, the pressure being an internal pressure of the second thermal treatment container, additionally applied with atmospheric pressure.
A process for obtaining a yeast strain suited to propagating effectively on a medium with low nutritional potential, suited to metabolize pentoses, and with resistance to fermentation inhibitors present ab initio in lignocellulosic hydrolysates or formed during alcoholic fermentation, comprising the steps of: a) crossing a recombinant yeast strain, suited to metabolize pentoses and to resist to fermentation inhibitors, with a wild yeast strain devoid of deficiencies, suited to grow on a minimum medium, wherein the recombinant yeast strain includes at least one copy of an exogenous xylose isomerase gene and at least one additional copy of a D-xylulokinase gene incorporated into the genome and linked to one of the mating traits of the strain and jointly segregating, b) at least two cycles of genome shuffling by random sporulation and/or hybridization, without selection between shuffling, c) selecting the population obtained in step b) according to a criterion of ability of the strains to metabolize xylose, d) selecting the population obtained in step c) according to a criterion of ability of the strains to grow on a medium of low nutritional value which is poor in nitrogenous bases and which comprises xylose as a sole source of carbon, a source of mineral nitrogen, a source of potassium, a source of phosphorous, a source of sulphur, a source of magnesium, a source of calcium, a source of iron, a source of trace elements and water, noting that the two steps of selection can be reversed. a) crossing a recombinant yeast strain, suited to metabolize pentoses and to resist to fermentation inhibitors, with a wild yeast strain devoid of deficiencies, suited to grow on a minimum medium, wherein the recombinant yeast strain includes at least one copy of an exogenous xylose isomerase gene and at least one additional copy of a D-xylulokinase gene incorporated into the genome and linked to one of the mating traits of the strain and jointly segregating, b) at least two cycles of genome shuffling by random sporulation and/or hybridization, without selection between shuffling, c) selecting the population obtained in step b) according to a criterion of ability of the strains to metabolize xylose, d) selecting the population obtained in step c) according to a criterion of ability of the strains to grow on a medium of low nutritional value which is poor in nitrogenous bases and which comprises xylose as a sole source of carbon, a source of mineral nitrogen, a source of potassium, a source of phosphorous, a source of sulphur, a source of magnesium, a source of calcium, a source of iron, a source of trace elements and water,
An apparatus comprising: a first amplifier stage configured to be independently enabled or disabled, the first amplifier stage further configured to receive and amplify an input radio frequency, RF, signal and provide a first output RF signal to a first load circuit when the first amplifier stage is enabled, the input RF signal comprising transmissions sent on multiple carriers at different frequencies to a wireless device; and a second amplifier stage configured to be independently enabled or disabled, the second amplifier stage further configured to receive and amplify the input RF signal and provide a second output RF signal to a second load circuit when the second amplifier stage is enabled; and an input matching circuit coupled to the first and second amplifier stages and configured to receive a receiver input signal and provide the input RF signal; and the input matching circuit being tunable and comprising at least one adjustable circuit component. a first amplifier stage configured to be independently enabled or disabled, the first amplifier stage further configured to receive and amplify an input radio frequency, RF, signal and provide a first output RF signal to a first load circuit when the first amplifier stage is enabled, the input RF signal comprising transmissions sent on multiple carriers at different frequencies to a wireless device; and a second amplifier stage configured to be independently enabled or disabled, the second amplifier stage further configured to receive and amplify the input RF signal and provide a second output RF signal to a second load circuit when the second amplifier stage is enabled; and an input matching circuit coupled to the first and second amplifier stages and configured to receive a receiver input signal and provide the input RF signal; and the input matching circuit being tunable and comprising at least one adjustable circuit component.
A detergent box assembly, comprising: a housing mechanism, a material box mechanism, an ejection mechanism, and a locking mechanism, wherein the housing mechanism is provided with a first accommodation cavity which is configured to accommodate the material box mechanism; the ejection mechanism is separately coupled to the material box mechanism and the locking mechanism; and the locking mechanism is separately coupled to the housing mechanism and the material box mechanism, and the locking mechanism comprises a track, a track switch, and an actuating assembly, wherein the track comprises a locking end and a releasing end; the track switch comprises a direction changing portion and a guide portion, the guide portion configured to slide along the track, and the direction changing portion configured to adjust a deflection angle of the guide portion in response to a sliding position of the guide portion on the track; and the actuating assembly comprises a sliding member, which is coupled to the ejection mechanism, the track switch, and the material box mechanism separately, and is configured to be driven by the ejection mechanism to drive the material box mechanism to move relative to the housing mechanism; characterized in that the direction changing portion is connected to the sliding member and is rotatable about a first rotation axis relative to the sliding member, wherein the first rotation axis is approximately perpendicular to a plane in which the track is located. the housing mechanism is provided with a first accommodation cavity which is configured to accommodate the material box mechanism; the ejection mechanism is separately coupled to the material box mechanism and the locking mechanism; and the locking mechanism is separately coupled to the housing mechanism and the material box mechanism, and the locking mechanism comprises a track, a track switch, and an actuating assembly, wherein the track comprises a locking end and a releasing end; the track switch comprises a direction changing portion and a guide portion, the guide portion configured to slide along the track, and the direction changing portion configured to adjust a deflection angle of the guide portion in response to a sliding position of the guide portion on the track; and the actuating assembly comprises a sliding member, which is coupled to the ejection mechanism, the track switch, and the material box mechanism separately, and is configured to be driven by the ejection mechanism to drive the material box mechanism to move relative to the housing mechanism; characterized in that the direction changing portion is connected to the sliding member and is rotatable about a first rotation axis relative to the sliding member, wherein the first rotation axis is approximately perpendicular to a plane in which the track is located.
Method for producing microcracks in the interior of a composite structure, at least comprising the steps of: providing or producing the composite structure, wherein the composite structure has a solid body and at least one metallic coating and/or electrical components arranged or formed on one side of the solid body and on the other side forms a planar surface, wherein the solid body comprises or consists of silicon carbide (SiC), generating modifications in the interior of the solid body, wherein laser radiation is introduced into the solid body via the planar surface, wherein the laser radiation brings about multiphoton excitation, characterized in that the multiphoton excitation brings about plasma generation, wherein the modification is brought about by the plasma in the form of a material transformation, wherein the material transformations generate compressive stresses in the solid body, wherein the solid body develops subcritical cracks in a surrounding area of the respective modification, wherein the modifications are generated at a distance of less than 150 μm from the metallic coating and/or the electrical components, wherein the laser radiation is introduced into the solid body in pulses, wherein the pulse intensity of the pulses reaches the maximum pulse intensity within 10 ns after the beginning of the respective pulse. providing or producing the composite structure, wherein the composite structure has a solid body and at least one metallic coating and/or electrical components arranged or formed on one side of the solid body and on the other side forms a planar surface, wherein the solid body comprises or consists of silicon carbide (SiC), generating modifications in the interior of the solid body, wherein laser radiation is introduced into the solid body via the planar surface, wherein the laser radiation brings about multiphoton excitation, characterized in that the multiphoton excitation brings about plasma generation, wherein the modification is brought about by the plasma in the form of a material transformation, wherein the material transformations generate compressive stresses in the solid body, wherein the solid body develops subcritical cracks in a surrounding area of the respective modification, wherein the modifications are generated at a distance of less than 150 μm from the metallic coating and/or the electrical components, wherein the laser radiation is introduced into the solid body in pulses, wherein the pulse intensity of the pulses reaches the maximum pulse intensity within 10 ns after the beginning of the respective pulse.
A mask defect test apparatus, comprising: a tension jig unit including a supporter on which a metal mask to be tested is located, a clamp part disposed at both sides of the supporter to fix opposite edges of the metal mask, and a tension part to pull the clamp part to apply a tension force to the metal mask; and a test unit to test the metal mask fixed by the tension jig unit, characterised in that, the shortest perpendicular distance between the metal mask located on the supporter and the test unit is less than or equal to the shortest perpendicular distance between the clamp part and the tension part, and the test unit, wherein a fixing surface of the clamp part fixing the edge of the metal mask has an inclined angle of 10° to 30° with respect to the surface of the supporter on which the metal mask is located. a tension jig unit including a supporter on which a metal mask to be tested is located, a clamp part disposed at both sides of the supporter to fix opposite edges of the metal mask, and a tension part to pull the clamp part to apply a tension force to the metal mask; and a test unit to test the metal mask fixed by the tension jig unit, characterised in that, the shortest perpendicular distance between the metal mask located on the supporter and the test unit is less than or equal to the shortest perpendicular distance between the clamp part and the tension part, and the test unit, wherein a fixing surface of the clamp part fixing the edge of the metal mask has an inclined angle of 10° to 30° with respect to the surface of the supporter on which the metal mask is located.
A method of application container access, the method comprising: performing a foreground unlock on an application container; creating a copy of a container key of the application container; locking the application container; the method being characterised in that it comprises: receiving a background unlock trigger; determining whether a background unlock is authorized; performing the background unlock on at least a portion of the application container using the copy of the container key in response to determining the background unlock is authorized; and storing data in the at least a portion of the application container while the application container is in the background unlock. performing a foreground unlock on an application container; creating a copy of a container key of the application container; locking the application container; receiving a background unlock trigger; determining whether a background unlock is authorized; performing the background unlock on at least a portion of the application container using the copy of the container key in response to determining the background unlock is authorized; and storing data in the at least a portion of the application container while the application container is in the background unlock.
A polycyclic compound represented by Formula 1: wherein in Formula 1, L l is a substituted or unsubstituted divalent phenyl group, or a substituted or unsubstituted divalent biphenyl group, Ar 1 is a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted perylene group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted fluoranthene group, a substituted or unsubstituted benzo fluorene group, or a substituted or unsubstituted pyrene group, wherein the term "substituted or unsubstituted" means that a group is substituted or unsubstituted with at least one substituent selected from the group consisting of a deuterium atom, a halogen atom, a cyano group, a nitro group, an amine group, a silyl group, an oxy group, a thio group, a sulfinyl group, a sulfonyl group, a carbonyl group, a boron group, a phosphine oxide group, a phosphine sulfide group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a hydrocarbon ring group, and an aryl group, and wherein the aryl group is an aromatic hydrocarbon ring. L l is a substituted or unsubstituted divalent phenyl group, or a substituted or unsubstituted divalent biphenyl group, Ar 1 is a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted perylene group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted fluoranthene group, a substituted or unsubstituted benzo fluorene group, or a substituted or unsubstituted pyrene group, wherein the term "substituted or unsubstituted" means that a group is substituted or unsubstituted with at least one substituent selected from the group consisting of a deuterium atom, a halogen atom, a cyano group, a nitro group, an amine group, a silyl group, an oxy group, a thio group, a sulfinyl group, a sulfonyl group, a carbonyl group, a boron group, a phosphine oxide group, a phosphine sulfide group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a hydrocarbon ring group, and an aryl group, and wherein the aryl group is an aromatic hydrocarbon ring.
A method for an apparatus, the method comprising: detecting an excess capacity condition in a wireless communication network, by detecting the presence of another wireless communication network that is available for offloading traffic; and increasing, from a currently subscribed-to value, to a higher value of an aggregated maximum bit rate for a mobile node operating in the wireless communication network. detecting an excess capacity condition in a wireless communication network, by detecting the presence of another wireless communication network that is available for offloading traffic; and increasing, from a currently subscribed-to value, to a higher value of an aggregated maximum bit rate for a mobile node operating in the wireless communication network.
Process for building tyres for vehicle wheels, comprising: forming a substantially cylindrical carcass sleeve, comprising at least one carcass ply; wherein said at least one carcass ply is formed by means of: laying strip-like elements consecutively adjacent one after the other around the circumferential extension of a substantially cylindrical deposition surface, wherein circumferentially consecutive strip-like elements are laid one after the other to form overlap zones along respective longitudinal edges (29a, 29b) superimposed on each other; wherein each overlap zone has, along a longitudinal extension thereof, terminal sections that are laterally opposite with respect to an intermediate section, wherein the intermediate section of each overlap zone has greater width than the width of the terminal sections. forming a substantially cylindrical carcass sleeve, comprising at least one carcass ply; wherein said at least one carcass ply is formed by means of: laying strip-like elements consecutively adjacent one after the other around the circumferential extension of a substantially cylindrical deposition surface, wherein circumferentially consecutive strip-like elements are laid one after the other to form overlap zones along respective longitudinal edges (29a, 29b) superimposed on each other; wherein each overlap zone has, along a longitudinal extension thereof, terminal sections that are laterally opposite with respect to an intermediate section, wherein the intermediate section of each overlap zone has greater width than the width of the terminal sections. laying strip-like elements consecutively adjacent one after the other around the circumferential extension of a substantially cylindrical deposition surface, wherein circumferentially consecutive strip-like elements are laid one after the other to form overlap zones along respective longitudinal edges (29a, 29b) superimposed on each other; wherein each overlap zone has, along a longitudinal extension thereof, terminal sections that are laterally opposite with respect to an intermediate section, wherein the intermediate section of each overlap zone has greater width than the width of the terminal sections.
A SiC single crystal, comprising: in a plane substantially parallel to a c-plane, (a) a region A in which threading edge dislocations having a Burgers vector A in a specific direction are unevenly distributed, and (b) a region B in which basal plane dislocations having a Burgers vector B in a specific direction are unevenly distributed, wherein the plane substantially parallel to the c-plane is a plane having an offset angle of 20 degrees or less with respect to the c-plane, the threading edge dislocations having the Burgers vector in the specific direction are threading edge dislocations having a Burgers vector in one of crystallographically equivalent three <11-20> directions, in the region A the type of the dislocations is mainly the threading edge dislocation type and the number of the threading edge dislocations having the Burgers vector A in the specific direction is larger than the number of other threading edge dislocations, the basal plane dislocations having the Burgers vectors B in the specific direction are basal plane dislocations having a Burgers vector in one of crystallographically equivalent three <11-20> directions, and in the region B the type of the dislocations is mainly the basal plane dislocation type and the number of the basal plane dislocations having the Burgers vector B in the specific direction is larger than the number of other basal plane dislocations. in a plane substantially parallel to a c-plane, (a) a region A in which threading edge dislocations having a Burgers vector A in a specific direction are unevenly distributed, and (b) a region B in which basal plane dislocations having a Burgers vector B in a specific direction are unevenly distributed, (a) a region A in which threading edge dislocations having a Burgers vector A in a specific direction are unevenly distributed, and (b) a region B in which basal plane dislocations having a Burgers vector B in a specific direction are unevenly distributed, wherein the plane substantially parallel to the c-plane is a plane having an offset angle of 20 degrees or less with respect to the c-plane, the threading edge dislocations having the Burgers vector in the specific direction are threading edge dislocations having a Burgers vector in one of crystallographically equivalent three <11-20> directions, in the region A the type of the dislocations is mainly the threading edge dislocation type and the number of the threading edge dislocations having the Burgers vector A in the specific direction is larger than the number of other threading edge dislocations, the basal plane dislocations having the Burgers vectors B in the specific direction are basal plane dislocations having a Burgers vector in one of crystallographically equivalent three <11-20> directions, and in the region B the type of the dislocations is mainly the basal plane dislocation type and the number of the basal plane dislocations having the Burgers vector B in the specific direction is larger than the number of other basal plane dislocations.