A method for forming an interconnection structure for a semiconductor device, the method comprising: forming a conductive layer on an insulating layer, forming above the conductive layer a first set of mandrel lines of a first material, forming a set of spacer lines of a second material different from the first material, wherein the spacer lines are formed on sidewalls of the first set of mandrel lines, forming a second set of mandrel lines of a third material different from the first and second materials, wherein the second mandrel lines fill gaps between the spacer lines, cutting at least a first mandrel line of the second set of mandrel lines into two line segments (142aa, 142ab) separated by a gap by etching said first mandrel line of the second set of mandrel lines selectively to the set of spacer lines and the first set of mandrel lines, cutting at least a first mandrel line of the first set of mandrel lines into two line segments (132ca, 132cb) separated by a gap by etching said first mandrel line of the first set of mandrel lines selectively to the set of spacer lines and the second set of mandrel lines, removing the set of spacer lines, selectively to the first and second sets of mandrel lines (132, 142), thereby forming an alternating pattern of mandrel lines of the first set and mandrel lines of the second set, and patterning the conductive layer to form a set of conductive lines, wherein the patterning comprises etching while using the alternating pattern of mandrel lines (132, 142) as an etch mask, the method further comprising, prior to forming the first set of mandrel lines, forming at least a first via hole (106a, 106b) in the insulating layer, the at least one first via hole extending through the insulating layer to a respective underlying conductive structure (104a, 104b), wherein forming the conductive layer comprises depositing the conductive layer to cover the insulating layer and fill said at least one via hole (106a, 106b), wherein an upper surface of the deposited conductive layer presents a varying topography in a first region above the first via hole, and wherein forming the first set of mandrel lines comprises aligning the first set of mandrel lines using the varying topography in the first region such that a mandrel line of the first set of mandrel lines runs above said first region, wherein said mandrel line of the first set of mandrel lines extends across the first via hole. forming a conductive layer on an insulating layer, forming above the conductive layer a first set of mandrel lines of a first material, forming a set of spacer lines of a second material different from the first material, wherein the spacer lines are formed on sidewalls of the first set of mandrel lines, forming a second set of mandrel lines of a third material different from the first and second materials, wherein the second mandrel lines fill gaps between the spacer lines, cutting at least a first mandrel line of the second set of mandrel lines into two line segments (142aa, 142ab) separated by a gap by etching said first mandrel line of the second set of mandrel lines selectively to the set of spacer lines and the first set of mandrel lines, cutting at least a first mandrel line of the first set of mandrel lines into two line segments (132ca, 132cb) separated by a gap by etching said first mandrel line of the first set of mandrel lines selectively to the set of spacer lines and the second set of mandrel lines, removing the set of spacer lines, selectively to the first and second sets of mandrel lines (132, 142), thereby forming an alternating pattern of mandrel lines of the first set and mandrel lines of the second set, and patterning the conductive layer to form a set of conductive lines, wherein the patterning comprises etching while using the alternating pattern of mandrel lines (132, 142) as an etch mask, the method further comprising, prior to forming the first set of mandrel lines, forming at least a first via hole (106a, 106b) in the insulating layer, the at least one first via hole extending through the insulating layer to a respective underlying conductive structure (104a, 104b), wherein forming the conductive layer comprises depositing the conductive layer to cover the insulating layer and fill said at least one via hole (106a, 106b), wherein an upper surface of the deposited conductive layer presents a varying topography in a first region above the first via hole, and wherein forming the first set of mandrel lines comprises aligning the first set of mandrel lines using the varying topography in the first region such that a mandrel line of the first set of mandrel lines runs above said first region, wherein said mandrel line of the first set of mandrel lines extends across the first via hole.