A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the direction, performing calcination of the coated composition, and subsequently performing firing of the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes: forming a first layer, which is a crystal diameter controlling layer, on the base electrode by the process including coating the composition for crystal diameter controlling layer on the base electrode, and preliminary firing of the coated composition to form a gel film of the composition for crystal diameter controlling layer; and performing formation of a second layer, which is an orientation controlling layer, by a process including coating the composition for forming a ferroelectric thin film on the crystal diameter controlling layer, performing calcination of the coated composition to form a gel film of the composition for forming a ferroelectric thin film, wherein the calcination for forming the orientation controlling layer is performed at a temperature in a range of 180°C to 300°C, and performing firing of the gel films, further comprising, after forming the orientation controlling layer, forming a third layer, which is a thickness adjusting layer, having preferential crystal orientation that is same as the preferential crystal orientation of the orientation controlling layer, by coating the composition for forming a ferroelectric thin film on the orientation controlling layer, performing calcination of the coated composition, and performing firing of the coated composition, where the thickness of the thickness adjusting layer is smaller than 5000 nm, where an amount of the composition for forming a ferroelectric thin film coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferred crystal orientation of the orientation controlling layer to be in the plane, and where the thickness of the crystal diameter controlling layer is 1 to 10 nm. coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the direction, performing calcination of the coated composition, and subsequently performing firing of the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes: forming a first layer, which is a crystal diameter controlling layer, on the base electrode by the process including coating the composition for crystal diameter controlling layer on the base electrode, and preliminary firing of the coated composition to form a gel film of the composition for crystal diameter controlling layer; and performing formation of a second layer, which is an orientation controlling layer, by a process including coating the composition for forming a ferroelectric thin film on the crystal diameter controlling layer, performing calcination of the coated composition to form a gel film of the composition for forming a ferroelectric thin film, wherein the calcination for forming the orientation controlling layer is performed at a temperature in a range of 180°C to 300°C, and performing firing of the gel films, further comprising, after forming the orientation controlling layer, forming a third layer, which is a thickness adjusting layer, having preferential crystal orientation that is same as the preferential crystal orientation of the orientation controlling layer, by coating the composition for forming a ferroelectric thin film on the orientation controlling layer, performing calcination of the coated composition, and performing firing of the coated composition, where the thickness of the thickness adjusting layer is smaller than 5000 nm, where an amount of the composition for forming a ferroelectric thin film coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferred crystal orientation of the orientation controlling layer to be in the plane, and where the thickness of the crystal diameter controlling layer is 1 to 10 nm.