mhurhangee/ep-ind-claims huggingface dataset:
A method for a transfer of a User Equipment, UE, context within a secondary network from a source secondary network node to a target secondary network node, wherein the UE is served by a master network node and the source secondary network node, the method comprising the following steps performed by the source secondary network node: • sending a first message indicative of a target secondary network node measurement configuration to the UE, wherein the first message is transmitted to the master network node to be forwarded to the UE; and • receiving a second message from the UE comprising a measurement report indicative of the measurements of potential candidates for the target secondary node; the method being characterised by • transmitting to the target secondary network node a handover request message, the handover request message instructing the target secondary network node to perform one or more configuration actions; • receiving from the target secondary network node a handover response message comprising configuration data of the target secondary network node; and • initiating a transfer of the UE context from the source secondary network node to the target secondary network node by transmitting to the master network node a further message comprising the configuration data of the target secondary network node. • sending a first message indicative of a target secondary network node measurement configuration to the UE, wherein the first message is transmitted to the master network node to be forwarded to the UE; and • receiving a second message from the UE comprising a measurement report indicative of the measurements of potential candidates for the target secondary node; • transmitting to the target secondary network node a handover request message, the handover request message instructing the target secondary network node to perform one or more configuration actions; • receiving from the target secondary network node a handover response message comprising configuration data of the target secondary network node; and • initiating a transfer of the UE context from the source secondary network node to the target secondary network node by transmitting to the master network node a further message comprising the configuration data of the target secondary network node.
Polycrystalline silicon rod having a total diameter of at least 150 mm, comprising a core having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B.
A method, comprising: in a vehicle engine harmonic modification system for a vehicle cabin, generating a non-zero target engine harmonic signal that is representative of a target engine harmonic sound level in the vehicle cabin and that comprises both magnitude and phase targets, wherein the vehicle engine harmonic modification system comprises a microphone that senses engine harmonic sounds in the vehicle cabin and an output transducer for producing an approximation of the target engine harmonic sound level at a location of the microphone, and using the target engine harmonic signal in an operation of the engine harmonic modification system so as to modify the level of engine harmonic sound in the vehicle cabin by subtracting the target engine harmonic signal from an output signal of the microphone in the electronic domain to create a target error signal and driving said target error signal to zero, so as to bring the engine harmonic sound level delivered by the output transducer in the vehicle cabin closer to the target engine harmonic sound level.
A process for forming a product comprising a platinum organosiloxane complex, wherein the process comprises: 1) combining by mixing for at least 2 hours at 25°C to 90°C or by milling for at least 1 hour at 25°C to 90°C A) a platinous halide, and B) a ketone, where milling is performed by adding inert particles to a container containing the starting materials in step 1) and subjecting the container to rolling or agitation, and thereafter; 2) adding starting materials comprising C) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated organic groups having from 2 to 6 carbon atoms and any remaining silicon bonded organic groups being monovalent hydrocarbon groups of 1 to 12 carbon atoms; wherein Yield of the present process is not dependent upon particle size and/or crystallite size of the platinous halide selected for starting material A). 1) combining by mixing for at least 2 hours at 25°C to 90°C or by milling for at least 1 hour at 25°C to 90°C A) a platinous halide, and B) a ketone, where milling is performed by adding inert particles to a container containing the starting materials in step 1) and subjecting the container to rolling or agitation, and thereafter; 2) adding starting materials comprising C) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated organic groups having from 2 to 6 carbon atoms and any remaining silicon bonded organic groups being monovalent hydrocarbon groups of 1 to 12 carbon atoms; wherein Yield of the present process is not dependent upon particle size and/or crystallite size of the platinous halide selected for starting material A). A) a platinous halide, and B) a ketone, where milling is performed by adding inert particles to a container containing the starting materials in step 1) and subjecting the container to rolling or agitation, and thereafter; 2) adding starting materials comprising C) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated organic groups having from 2 to 6 carbon atoms and any remaining silicon bonded organic groups being monovalent hydrocarbon groups of 1 to 12 carbon atoms; wherein Yield of the present process is not dependent upon particle size and/or crystallite size of the platinous halide selected for starting material A).
An integrated circuit device comprising: - a semiconductor substrate having a resistivity of at least 100 Q.cm; - an electrically insulating layer that contacts the semiconductor substrate, the electrically insulating layer being susceptible of inducing in the semiconductor substrate a parasitic surface conduction layer that interfaces with the electrically insulating layer; and - an electrical circuit located on the electrically insulating layer, wherein the integrated circuit device comprises a plurality of depletion-inducing junctions at least partially comprised in the semiconductor substrate, the plurality of depletion-inducing junctions being adapted to autonomously induce in the semiconductor substrate a plurality of depleted zones that interface with the electrically insulating layer, characterized in that the depletion-inducing junctions are disposed in one of the following manners: an array-like manner and a checkerboard-like manner, and whereby at least some depletion-inducing junctions of the plurality interface with a section of the electrically insulating layer that lies in-between two sections (104, 105) of the electrical circuit. - a semiconductor substrate having a resistivity of at least 100 Q.cm; - an electrically insulating layer that contacts the semiconductor substrate, the electrically insulating layer being susceptible of inducing in the semiconductor substrate a parasitic surface conduction layer that interfaces with the electrically insulating layer; and - an electrical circuit located on the electrically insulating layer,
Use of a powder material for sintering in a vacuum atmosphere, wherein the powder material comprises: vanadium and oxygen; and a vanadium oxide represented by a chemical formula VO 2 and at least one other type of vanadium oxide, wherein, when a molar ratio of V and O in all powder is expressed as 1: (2 + d), d is in a range of 0 < d < 0.1, obtained by annealing VO 2 in the air to convert a part of VO 2 into a VO 2+n compound containing more oxygen, wherein one or more types of the VO 2+n compound having a value of n of 0 < n ≤ 0.5 exist. vanadium and oxygen; and a vanadium oxide represented by a chemical formula VO 2 and at least one other type of vanadium oxide, wherein, when a molar ratio of V and O in all powder is expressed as 1: (2 + d), d is in a range of 0 < d < 0.1, obtained by annealing VO 2 in the air to convert a part of VO 2 into a VO 2+n compound containing more oxygen, wherein one or more types of the VO 2+n compound having a value of n of 0 < n ≤ 0.5 exist.
A system, comprising: a hand-held welding tool that is manually placed in a welding position, wherein the hand-held welding tool is configured to be activated to cause a contact tip or a welding heat source to automatically move from a first position and to second position during a welding operation, characterised in that a welding arc is automatically and repeatedly turned off and on while the contact tip or the welding heat source moves from the first position to the second position to make a plurality of welds between the first position and the second position, and in that as a travel speed decreases, a time period between each arc on time increases to make equally spaced weld spots. a hand-held welding tool that is manually placed in a welding position, wherein the hand-held welding tool is configured to be activated to cause a contact tip or a welding heat source to automatically move from a first position and to second position during a welding operation, characterised in that a welding arc is automatically and repeatedly turned off and on while the contact tip or the welding heat source moves from the first position to the second position to make a plurality of welds between the first position and the second position, and in that as a travel speed decreases, a time period between each arc on time increases to make equally spaced weld spots.
A power supply system comprising: an AC power line; a first uninterruptible power supply, UPS, device coupled to receive input power from the AC power line, the first UPS device including control circuitry configured to couple power conversion circuitry to the AC power line upon detection that the input power is acceptable, and upon expiration of a first timer delay; a second UPS device coupled to receive input power from the AC power line, the second UPS device including control circuitry configured to couple power conversion circuitry to the AC power line upon detection that the input power is acceptable, and upon expiration of a second timer delay; and a controller coupled to the first UPS device and the second UPS device, characterized in that the controller is configured to set the first timer delay of the first UPS device to a first one of at least two distinct preprogrammed timer delays and the second timer delay of the second UPS device to a second one of the at least two distinct preprogrammed timer delays. an AC power line; a first uninterruptible power supply, UPS, device coupled to receive input power from the AC power line, the first UPS device including control circuitry configured to couple power conversion circuitry to the AC power line upon detection that the input power is acceptable, and upon expiration of a first timer delay; a second UPS device coupled to receive input power from the AC power line, the second UPS device including control circuitry configured to couple power conversion circuitry to the AC power line upon detection that the input power is acceptable, and upon expiration of a second timer delay; and a controller coupled to the first UPS device and the second UPS device, characterized in that the controller is configured to set the first timer delay of the first UPS device to a first one of at least two distinct preprogrammed timer delays and the second timer delay of the second UPS device to a second one of the at least two distinct preprogrammed timer delays.
A process for producing a composition comprising extracellular enveloped virus and intracellular mature virus of a recombinant modified vaccinia virus Ankara with no targeted infection specificity, wherein said recombinant modified vaccinia virus Ankara comprises an exogenous sequence inserted in its genome, and wherein more than 1% of the recombinant MVA comprised in said composition are EEV, said process comprising the steps of: a) preparing a culture of packaging cells, b) infecting said cell culture with said recombinant MVA, c) culturing said infected cells for an appropriate period of time, and d) recovering the viral particles produced from the culture supernatant and the packaging cells, wherein said step d) comprises a step allowing the disruption of the packaging cell membrane. a) preparing a culture of packaging cells, b) infecting said cell culture with said recombinant MVA, c) culturing said infected cells for an appropriate period of time, and d) recovering the viral particles produced from the culture supernatant and the packaging cells, wherein said step d) comprises a step allowing the disruption of the packaging cell membrane.
A surgical clip applier, comprising: a shaft having a proximal end and a distal end with opposed jaws thereon; a guide member disposed within the shaft and configured to guide a clip into the opposed jaws, the guide member having a channel formed in a surface thereof; and an advancer movably disposed within the shaft and configured to advance a clip over the guide member and into the opposed jaws, the advancer having a distal tip (90") that slidably engages the channel for maintaining contact with a surgical clip as it is advanced into the opposed jaws; wherein the distal tip (90") has a distal-facing surface that is configured to abut an apex of a surgical clip to advance the surgical clip into the opposed jaws, the distal-facing surface having a height that is greater than a depth of the channel; characterized in that the guide member has a longitudinally extending groove located distal to the channel and adjacent to the distal end of the guide member, the distal-facing surface of the distal tip (90") being adapted to extend into the groove, whereby the groove prevents lateral movement of the distal tip (90"). a shaft having a proximal end and a distal end with opposed jaws thereon; a guide member disposed within the shaft and configured to guide a clip into the opposed jaws, the guide member having a channel formed in a surface thereof; and an advancer movably disposed within the shaft and configured to advance a clip over the guide member and into the opposed jaws, the advancer having a distal tip (90") that slidably engages the channel for maintaining contact with a surgical clip as it is advanced into the opposed jaws;
Thermoelectric generator comprising one or more stacks formed from horizontally arranged layers (8, 9, 10) having channels (3, 4) extending vertically in between, wherein the layers (8, 9, 10) is a sequence of a p-type semiconducting layer and an n-type semiconducting layer with an insulating layer sandwiched therebetween, wherein in each case two successive semiconducting layers (8, 10) are electrically connected across the insulating layer so that a current flow due to thermal diffusion is possible only in the horizontal direction along the temperature gradient inside a semiconducting layer (8, 10), wherein the vertically extending channels (3, 4) duct warm and cold air alternately with the result that a temperature gradient is produced inside the semiconducting layers (8, 10), characterised in that the semiconducting layers (8, 10) include a support matrix which is a resin having platelet-like particles coated with a doped oxide, which are present in the support matrix in a concentration above the percolation threshold.
A method, in a user equipment of a carrier aggregation transmission-based radio communication network, of controlling uplink transmission of the user equipment over a plurality of secondary cells in a group of secondary cells, the user equipment being configured with a group of primary cells and at least one group of secondary cells, the group of secondary cells belonging to the at least one group of secondary cells, and the group of primary cells and the at least one group of secondary cells each being configured with a time alignment timer, wherein the method comprises the step of: A. terminating the uplink transmission over at least one activated secondary cell in the group of secondary cells when the time alignment timer of the group of primary cells expires, characterized in that the step A comprises the step of: - de-configuring the configuration of sounding reference signal transmission of the at least one activated secondary cell in the group of secondary cells when the time alignment timer of the primary cell group expires. A. terminating the uplink transmission over at least one activated secondary cell in the group of secondary cells when the time alignment timer of the group of primary cells expires, characterized in that the step A comprises the step of: - de-configuring the configuration of sounding reference signal transmission of the at least one activated secondary cell in the group of secondary cells when the time alignment timer of the primary cell group expires. - de-configuring the configuration of sounding reference signal transmission of the at least one activated secondary cell in the group of secondary cells when the time alignment timer of the primary cell group expires.
A spring steel having a chemical composition consisting of, in mass%, C: 0.4 to 0.7%, Si: 1.1 to 3.0%, Mn: 0.3 to 1.5%, P: equal to or less than 0.03%, S: equal to or less than 0.05%, Al: 0.01 to 0.05%, rare earth metal: 0.0001 to 0.002%, N: equal to or less than 0.015%, O: equal to or less than 0.0030%, Ti: 0.02 to 0.1%, Ca: 0 to 0.0030%, Cr: 0 to 2.0%, Mo: 0 to 1.0%, W: 0 to 1.0%, V: 0 to 0.70%, Nb: 0 to less than 0.050%, Ni: 0 to 3.5%, Cu: 0 to 0.5%, and B: 0 to 0.0050%, with the balance being Fe and impurities, wherein a number of oxide inclusions having an equivalent circular diameter of equal to or greater than 5 μm is equal to or less than 0.2/mm 2, the oxide inclusions each being one of an Al-based oxide, a complex oxide containing REM, O and Al, and a complex oxysulfide containing REM, O, S, and Al, and wherein a maximum value among equivalent circular diameters of the oxide inclusions is equal to or less than 40 μm.
A self-generating bidet, the bidet injecting water through a nozzle part, comprising: a water inlet into which water is introduced; a generator generating power through the water introduced into the water inlet; a charging unit storing electricity generated from the generator; and a nozzle passage part provided between the generator and the nozzle part (150 to supply the water passing through the generator to the nozzle part; wherein the self-generating bidet further comprises: a tank passage part provided between the generator and a water tank to supply the water passing through the generator to the water tank for washing a bowl of a toilet stool, or comprises a water flushing passage part provided between the generator and a bowl of a toilet stool to supply the water passing through the generator to the bowl of the toilet, wherein the self-generating bidet generates power through the water flowing in the tank passage part and the nozzle passage part, or in the water flushing part and the nozzle passage part, and wherein the tank passage part includes a tank passage having a diameter larger than that of a nozzle passage included in the nozzle passage part. a water inlet into which water is introduced; a generator generating power through the water introduced into the water inlet; a charging unit storing electricity generated from the generator; and a nozzle passage part provided between the generator and the nozzle part (150 to supply the water passing through the generator to the nozzle part; wherein the self-generating bidet further comprises: a tank passage part provided between the generator and a water tank to supply the water passing through the generator to the water tank for washing a bowl of a toilet stool, or comprises a water flushing passage part provided between the generator and a bowl of a toilet stool to supply the water passing through the generator to the bowl of the toilet, wherein the self-generating bidet generates power through the water flowing in the tank passage part and the nozzle passage part, or in the water flushing part and the nozzle passage part, and wherein the tank passage part includes a tank passage having a diameter larger than that of a nozzle passage included in the nozzle passage part. a tank passage part provided between the generator and a water tank to supply the water passing through the generator to the water tank for washing a bowl of a toilet stool, or comprises a water flushing passage part provided between the generator and a bowl of a toilet stool to supply the water passing through the generator to the bowl of the toilet, wherein the self-generating bidet generates power through the water flowing in the tank passage part and the nozzle passage part, or in the water flushing part and the nozzle passage part, and wherein the tank passage part includes a tank passage having a diameter larger than that of a nozzle passage included in the nozzle passage part.
A solar energy collector and thermal storage device for placement in an exterior architectural opening of a building, comprising: - an insulating cavity including a first lite on the device exterior side and a second lite spaced inwardly therefrom, defining a depth of the insulating cavity, and being substantially filled with an insulating gas; - a thermal storage cavity including the second lite and a third lite spaced inwardly therefrom, being substantially filled with a thermal storage medium; the thermal storage medium is a hydrogel; and - a low-emissivity coating disposed on the insulating cavity side of the second lite inhibits thermal radiation transfer from the thermal storage medium to the exterior, characterized in that said second and third lite define a depth of the thermal storage cavity which is at least the same size as the insulating cavity depth; and in that said hydrogel adheres to the second lite and the third lite and has cohesion characteristics such that it is self supporting and maintains its shape within the thermal storage cavity. - an insulating cavity including a first lite on the device exterior side and a second lite spaced inwardly therefrom, defining a depth of the insulating cavity, and being substantially filled with an insulating gas; - a thermal storage cavity including the second lite and a third lite spaced inwardly therefrom, being substantially filled with a thermal storage medium; the thermal storage medium is a hydrogel; and - a low-emissivity coating disposed on the insulating cavity side of the second lite inhibits thermal radiation transfer from the thermal storage medium to the exterior, characterized in that said second and third lite define a depth of the thermal storage cavity which is at least the same size as the insulating cavity depth; and in that said hydrogel adheres to the second lite and the third lite and has cohesion characteristics such that it is self supporting and maintains its shape within the thermal storage cavity.