A light emitting device package (100A, 100B, 100C, 100D, 101, 200, 300) comprising: a ceramic substrate (110, 210, 310); a light emitting device (140, 140A, 140B, 240, 340) on the ceramic substrate (110, 210, 310); a first light-transmissive resin layer (150, 150A, 250, 350) on the ceramic substrate (110, 210, 310) to cover the light emitting device (140, 140A, 140B, 240, 340); a phosphor layer (155, 155A, 155B, 255, 355) on the first light-transmissive resin layer (150, 150A, 250, 350); and a second light-transmissive resin layer (160, 160A, 260, 360) on the phosphor layer (155, 155A, 155B, 255, 355), wherein the first light-transmissive resin layer (150, 150A, 250, 350) has a width equal to or less than that of the ceramic substrate (110, 210, 310), wherein the light emitting device (140, 140A, 140B, 240, 340) is an LED chip, wherein the second light-transmissive resin layer (160, 160A, 260, 360) includes a lens unit (162, 262, 362) protruding upward of the light emitting device (140, 140A, 140B, 240, 340), wherein the first light-transmissive resin layer (150, 150A, 250, 350) has a thickness larger than a thickness of the light emitting device (140, 140A, 140B, 240, 340), wherein the phosphor layer (155, 155A, 155B, 255, 355) has a thickness thinner than that of the first light-transmissive resin layer (150, 150A, 250, 350), wherein a surface of the phosphor layer (155, 155A, 155B, 255, 355) contacting with the first light-transmissive resin layer (150, 150A, 250, 350) and a surface of the phosphor layer (155, 155A, 155B, 255, 355) contacting with the second light transmissive resin layer (160, 160A, 260, 360) are curved out at a region, corresponding to the lens unit (162, 262, 362), over the light emitting device (140, 140A, 140B, 240, 340). a ceramic substrate (110, 210, 310); a light emitting device (140, 140A, 140B, 240, 340) on the ceramic substrate (110, 210, 310); a first light-transmissive resin layer (150, 150A, 250, 350) on the ceramic substrate (110, 210, 310) to cover the light emitting device (140, 140A, 140B, 240, 340); a phosphor layer (155, 155A, 155B, 255, 355) on the first light-transmissive resin layer (150, 150A, 250, 350); and a second light-transmissive resin layer (160, 160A, 260, 360) on the phosphor layer (155, 155A, 155B, 255, 355), wherein the first light-transmissive resin layer (150, 150A, 250, 350) has a width equal to or less than that of the ceramic substrate (110, 210, 310), wherein the light emitting device (140, 140A, 140B, 240, 340) is an LED chip, wherein the second light-transmissive resin layer (160, 160A, 260, 360) includes a lens unit (162, 262, 362) protruding upward of the light emitting device (140, 140A, 140B, 240, 340), wherein the first light-transmissive resin layer (150, 150A, 250, 350) has a thickness larger than a thickness of the light emitting device (140, 140A, 140B, 240, 340), wherein the phosphor layer (155, 155A, 155B, 255, 355) has a thickness thinner than that of the first light-transmissive resin layer (150, 150A, 250, 350), wherein a surface of the phosphor layer (155, 155A, 155B, 255, 355) contacting with the first light-transmissive resin layer (150, 150A, 250, 350) and a surface of the phosphor layer (155, 155A, 155B, 255, 355) contacting with the second light transmissive resin layer (160, 160A, 260, 360) are curved out at a region, corresponding to the lens unit (162, 262, 362), over the light emitting device (140, 140A, 140B, 240, 340).