A mixed-signal multi-chip package comprising: - a lead frame comprising a die handle, - a first die attached to the die handle and comprising MEMS structures and configured to provide at least one analog signal in at least one analog chip pad of the first die, and - a digital die attached to the die handle and configured to receive the at least one analog signal from the first die through at least one analog chip pad of the digital die, wherein a first bonding wire couples the at least one analog chip pad of the digital die with the respective at least one analog output chip pad of the first die, wherein the at least one digital die is configured to communicate with external circuitry using at least one digital signal-bearing signal exchanged via at least one first bond pad of the lead-frame, wherein the lead-frame comprises two second bond pads bridged with one another by a bridging part of the lead frame, the bridging part extending in lateral dimension within a plane of the lead-frame, wherein the at least one first bond pad resides between the two second bond pads, wherein the two second bond pads are short-circuited by the bridging pa rt, wherein the bridging part and the two second bond pads form a semi-circle around the at least one first bond pad at the side opposite of at least one signal-bearing lead configured to couple the respective at least one first bond pad towards external circuitry, and wherein, in operation, at least one of the two second bond pads is to be coupled to a DC voltage to cause the bridging part to form a DC barrier between the at least one first bond pad and other parts residing inside the mixed-signal multi-chip package, characterized in that the bridging part further extends below the digital die to include on the inner side of the semi-circle a lateral area of the lead frame that resides below at least one digital signal-bearing chip pad of the digital die and digital signal-bearing bonding wires coupling the at least one first bond pad and the at least one digital signal-bearing chip pad. - a lead frame comprising a die handle, - a first die attached to the die handle and comprising MEMS structures and configured to provide at least one analog signal in at least one analog chip pad of the first die, and - a digital die attached to the die handle and configured to receive the at least one analog signal from the first die through at least one analog chip pad of the digital die, wherein a first bonding wire couples the at least one analog chip pad of the digital die with the respective at least one analog output chip pad of the first die, wherein the at least one digital die is configured to communicate with external circuitry using at least one digital signal-bearing signal exchanged via at least one first bond pad of the lead-frame, wherein the lead-frame comprises two second bond pads bridged with one another by a bridging part of the lead frame, the bridging part extending in lateral dimension within a plane of the lead-frame, wherein the at least one first bond pad resides between the two second bond pads, wherein the two second bond pads are short-circuited by the bridging pa rt, wherein the bridging part and the two second bond pads form a semi-circle around the at least one first bond pad at the side opposite of at least one signal-bearing lead configured to couple the respective at least one first bond pad towards external circuitry, and wherein, in operation, at least one of the two second bond pads is to be coupled to a DC voltage to cause the bridging part to form a DC barrier between the at least one first bond pad and other parts residing inside the mixed-signal multi-chip package, characterized in that the bridging part further extends below the digital die to include on the inner side of the semi-circle a lateral area of the lead frame that resides below at least one digital signal-bearing chip pad of the digital die and digital signal-bearing bonding wires coupling the at least one first bond pad and the at least one digital signal-bearing chip pad.