A packaged radio frequency, RF, amplifier device comprising: a device substrate; an input lead coupled to the device substrate; an output lead coupled to the device substrate; a transistor die coupled to the device substrate, wherein the transistor die includes a transistor, a transistor input terminal coupled to the input lead, and a transistor output terminal coupled to the output lead; an output impedance matching circuit coupled to the output lead and the transistor output terminal, wherein the output impedance matching circuit includes a first set of bondwires coupled between the output lead and the transistor output terminal, an output capacitor including a first terminal and a second terminal, a second set of bondwires coupled between the transistor output terminal and the first terminal of the output capacitor, a third set of bondwires coupled between the second terminal of the output capacitor and a ground reference node, wherein the third set of bondwires is parallel to the first and second set of bondwires (552, 554); wherein a current flowing through the third set of bondwires is in an opposite direction with regards to currents flowing through the first and second sets of bondwires (552, 554); and wherein the first set of bondwires, the second set of bondwires, and the third set of bondwires have profiles configured to increase the electromagnetic coupling between the first and third sets of bondwires (552, 558), to decrease the positive mutual inductance between the first and second sets of bondwires (552,554), and to decrease the electromagnetic coupling between the second and third sets of bondwires (554,558). a device substrate; an input lead coupled to the device substrate; an output lead coupled to the device substrate; a transistor die coupled to the device substrate, wherein the transistor die includes a transistor, a transistor input terminal coupled to the input lead, and a transistor output terminal coupled to the output lead; an output impedance matching circuit coupled to the output lead and the transistor output terminal, wherein the output impedance matching circuit includes a first set of bondwires coupled between the output lead and the transistor output terminal, an output capacitor including a first terminal and a second terminal, a second set of bondwires coupled between the transistor output terminal and the first terminal of the output capacitor, a third set of bondwires coupled between the second terminal of the output capacitor and a ground reference node, wherein the third set of bondwires is parallel to the first and second set of bondwires (552, 554); wherein a current flowing through the third set of bondwires is in an opposite direction with regards to currents flowing through the first and second sets of bondwires (552, 554); and wherein the first set of bondwires, the second set of bondwires, and the third set of bondwires have profiles configured to increase the electromagnetic coupling between the first and third sets of bondwires (552, 558), to decrease the positive mutual inductance between the first and second sets of bondwires (552,554), and to decrease the electromagnetic coupling between the second and third sets of bondwires (554,558).