A SRAM memory device comprising: a memory array comprising a plurality of SRAM banks, wherein each SRAM bank includes a block of SRAM memory cells organized as a matrix of X-rows and Y-columns and memory cell access circuitry; a set of 'N' separate and distinct SRAM pipes associated with each of the SRAM banks, each SRAM pipe of the set of 'N' separate and distinct SRAM pipes providing independent access to an associated SRAM bank, wherein each SRAM pipe of the set of 'N' separate and distinct SRAM pipes includes: a write pipe configured with a separate complete write address pre-decoder bus, separate write control signals, a separate internal write data input bus, a separate m-deep write buffer (311, 312, 322, 323) that is adapted to manage write data and write address propagation from input pins to memory array, and write timing clock signal circuitry; and a read pipe configured with a separate complete read address pre-decoder bus, separate read control signals, a separate internal read data output bus, a separate k-stage output pipeline (510, 512, 520, 522) that is adapted to manage read data propagation from memory to output pins, and read timing clock signal circuitry; wherein the device is configured such that each SRAM pipe of the set of 'N' separate and distinct SRAM pipes provides access to the associated SRAM bank substantially parallel to, or in staggered overlap, with access to other of the SRAM banks via other SRAM pipe of the set of 'N' separate and distinct SRAM pipes, and wherein N and m are each integers ≥ 2 and k is an integer > 3. a memory array comprising a plurality of SRAM banks, wherein each SRAM bank includes a block of SRAM memory cells organized as a matrix of X-rows and Y-columns and memory cell access circuitry; a set of 'N' separate and distinct SRAM pipes associated with each of the SRAM banks, each SRAM pipe of the set of 'N' separate and distinct SRAM pipes providing independent access to an associated SRAM bank, wherein each SRAM pipe of the set of 'N' separate and distinct SRAM pipes includes: a write pipe configured with a separate complete write address pre-decoder bus, separate write control signals, a separate internal write data input bus, a separate m-deep write buffer (311, 312, 322, 323) that is adapted to manage write data and write address propagation from input pins to memory array, and write timing clock signal circuitry; and a read pipe configured with a separate complete read address pre-decoder bus, separate read control signals, a separate internal read data output bus, a separate k-stage output pipeline (510, 512, 520, 522) that is adapted to manage read data propagation from memory to output pins, and read timing clock signal circuitry; a write pipe configured with a separate complete write address pre-decoder bus, separate write control signals, a separate internal write data input bus, a separate m-deep write buffer (311, 312, 322, 323) that is adapted to manage write data and write address propagation from input pins to memory array, and write timing clock signal circuitry; and a read pipe configured with a separate complete read address pre-decoder bus, separate read control signals, a separate internal read data output bus, a separate k-stage output pipeline (510, 512, 520, 522) that is adapted to manage read data propagation from memory to output pins, and read timing clock signal circuitry; wherein the device is configured such that each SRAM pipe of the set of 'N' separate and distinct SRAM pipes provides access to the associated SRAM bank substantially parallel to, or in staggered overlap, with access to other of the SRAM banks via other SRAM pipe of the set of 'N' separate and distinct SRAM pipes, and wherein N and m are each integers ≥ 2 and k is an integer > 3.