A semiconductor assembly, comprising: a semiconductor substrate including a substrate material having a first major surface, a second major surface, and an opening extending from the first major surface to the second major surface, the opening including a generally cylindrical portion extending generally normal to the first major surface, the cylindrical portion having a generally smooth, uniform surface, the opening further including a terminal portion extending transverse to the cylindrical portion and intersecting the second major surface, the terminal portion having a width generally parallel to the plane of the first major surface that is greater than a corresponding width of the cylindrical portion; a single, uniform, homogeneous volume of conductive material disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion, the conductive terminal having a cross-section that is convexly rounded, wherein the cross-section is taken in a plane normal to the second major surface, wherein the convexly rounded conductive terminal projects away from the second major surface in a direction away from the first major surface, the conductive terminal having a first cross- sectional area and a second cross-sectional area greater than the first cross- sectional area, wherein the first cross-sectional area is in a first plane that is generally parallel to the second major surface and includes an outermost surface of the semiconductor substrate and the second cross-sectional area is in a second plane generally parallel to the first plane and positioned beyond the outermost surface; and a microelectronic element formed in the substrate material and electrically coupled to the conductive material. a semiconductor substrate including a substrate material having a first major surface, a second major surface, and an opening extending from the first major surface to the second major surface, the opening including a generally cylindrical portion extending generally normal to the first major surface, the cylindrical portion having a generally smooth, uniform surface, the opening further including a terminal portion extending transverse to the cylindrical portion and intersecting the second major surface, the terminal portion having a width generally parallel to the plane of the first major surface that is greater than a corresponding width of the cylindrical portion; a single, uniform, homogeneous volume of conductive material disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion, the conductive terminal having a cross-section that is convexly rounded, wherein the cross-section is taken in a plane normal to the second major surface, wherein the convexly rounded conductive terminal projects away from the second major surface in a direction away from the first major surface, the conductive terminal having a first cross- sectional area and a second cross-sectional area greater than the first cross- sectional area, wherein the first cross-sectional area is in a first plane that is generally parallel to the second major surface and includes an outermost surface of the semiconductor substrate and the second cross-sectional area is in a second plane generally parallel to the first plane and positioned beyond the outermost surface; and a microelectronic element formed in the substrate material and electrically coupled to the conductive material.