Method for producing, on a semiconductive active layer of at least one transistor comprising a gate, a source and a drain, said source and drain being raised with respect to the active layer and having lateral faces tilted with respect to a direction normal to the active layer, referenced direction Z, the method comprising at least the following steps: - Providing a stack comprising the active layer extending mainly along a main plane and a gate pattern, the gate pattern having lateral flanks extending perpendicularly to the active layer; - Depositing, on the gate pattern and the active layer, a layer made of a dielectric material having a thickness e 30 and comprising portions, called lateral portions, covering the lateral flanks, and portions, called basal portions, extending mainly parallel to said main plane, the lateral portions being substantially normal to the basal portions; - Carrying out an isotropic modification of said layer over a thickness e 301, so as to obtain a first portion of modified layer comprising a modified dielectric material, with e 301 < e 30, the first portion of modified layer being conserved from the isotropic modification, said isotropic modification being carried out by implantation of ions; - Before or after the step of carrying out an isotropic modification: - Carrying out an anisotropic modification of said layer over a thickness e 30, along the direction normal to the active layer, so as to obtain second portions of modified layer comprising the modified dielectric material by conserving portions (31, 32) of non-modified layer on the lateral flanks of the gate pattern and on the active layer at the foot of the gate pattern, just under the lateral portions covering the flanks of the gate pattern, the second portions of modified layer being conserved from the anisotropic modification, said anisotropic modification being carried out by implantation of ions; - Removing the first and second modified portions after the isotropic and anisotropic modifications by conserving the portions (31, 32) of non-modified layer by selective etching of the modified dielectric material opposite the non-modified dielectric material, so as to form spacers having an L-shape; - Epitaxially growing the source and drain in contact with the L-shaped spacers, so as to obtain the raised source and drain with respect to the active layer and having lateral faces tilted with respect to the direction Z. - Providing a stack comprising the active layer extending mainly along a main plane and a gate pattern, the gate pattern having lateral flanks extending perpendicularly to the active layer; - Depositing, on the gate pattern and the active layer, a layer made of a dielectric material having a thickness e 30 and comprising portions, called lateral portions, covering the lateral flanks, and portions, called basal portions, extending mainly parallel to said main plane, the lateral portions being substantially normal to the basal portions; - Carrying out an isotropic modification of said layer over a thickness e 301, so as to obtain a first portion of modified layer comprising a modified dielectric material, with e 301 < e 30, the first portion of modified layer being conserved from the isotropic modification, said isotropic modification being carried out by implantation of ions; - Before or after the step of carrying out an isotropic modification: - Carrying out an anisotropic modification of said layer over a thickness e 30, along the direction normal to the active layer, so as to obtain second portions of modified layer comprising the modified dielectric material by conserving portions (31, 32) of non-modified layer on the lateral flanks of the gate pattern and on the active layer at the foot of the gate pattern, just under the lateral portions covering the flanks of the gate pattern, the second portions of modified layer being conserved from the anisotropic modification, said anisotropic modification being carried out by implantation of ions; - Removing the first and second modified portions after the isotropic and anisotropic modifications by conserving the portions (31, 32) of non-modified layer by selective etching of the modified dielectric material opposite the non-modified dielectric material, so as to form spacers having an L-shape; - Epitaxially growing the source and drain in contact with the L-shaped spacers, so as to obtain the raised source and drain with respect to the active layer and having lateral faces tilted with respect to the direction Z. - Carrying out an anisotropic modification of said layer over a thickness e 30, along the direction normal to the active layer, so as to obtain second portions of modified layer comprising the modified dielectric material by conserving portions (31, 32) of non-modified layer on the lateral flanks of the gate pattern and on the active layer at the foot of the gate pattern, just under the lateral portions covering the flanks of the gate pattern, the second portions of modified layer being conserved from the anisotropic modification, said anisotropic modification being carried out by implantation of ions; - Removing the first and second modified portions after the isotropic and anisotropic modifications by conserving the portions (31, 32) of non-modified layer by selective etching of the modified dielectric material opposite the non-modified dielectric material, so as to form spacers having an L-shape; - Epitaxially growing the source and drain in contact with the L-shaped spacers, so as to obtain the raised source and drain with respect to the active layer and having lateral faces tilted with respect to the direction Z.