Process for the production of multilayer structures, where a substrate material comprising a copolycarbonate which comprises at least one bisphenol unit of the formula in which R2 is C 1 - to C 4 -alkyl, N is 0, 1, 2, or 3, and comprises as terminal group (chain terminator) a structural unit of the formula in which R1 is hydrogen or C 1 - to C 18 -alkyl, and has a Vicat softening point in accordance with DIN ISO 306 above 160°C, is processed to give a molding, where said molding is pretreated with an air- or argon-based plasma and then is metalized by means of a sputtering process in a DC magnetron; characterized in that (a) the substrate material consists of from 15% by weight to 50% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 0.4 W/cm 2 to 8.4 W/cm 2, and a process gas pressure of from 0.04 to 0.4 mbar; or (b) the substrate material consists of from 51% by weight to 95% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 3.1 W/cm 2 to 8.3 W/cm 2, and a process gas pressure of from 0.04 to 0.15 mbar. R2 is C 1 - to C 4 -alkyl, N is 0, 1, 2, or 3, and comprises as terminal group (chain terminator) a structural unit of the formula R1 is hydrogen or C 1 - to C 18 -alkyl, and has a Vicat softening point in accordance with DIN ISO 306 above 160°C, is processed to give a molding, where said molding is pretreated with an air- or argon-based plasma and then is metalized by means of a sputtering process in a DC magnetron; characterized in that (a) the substrate material consists of from 15% by weight to 50% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 0.4 W/cm 2 to 8.4 W/cm 2, and a process gas pressure of from 0.04 to 0.4 mbar; or (b) the substrate material consists of from 51% by weight to 95% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 3.1 W/cm 2 to 8.3 W/cm 2, and a process gas pressure of from 0.04 to 0.15 mbar. (a) the substrate material consists of from 15% by weight to 50% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 0.4 W/cm 2 to 8.4 W/cm 2, and a process gas pressure of from 0.04 to 0.4 mbar; or (b) the substrate material consists of from 51% by weight to 95% by weight, based on the total quantity of the bisphenol blocks, of bisphenol units derived from 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, and the pretreatment with the air- or argon-based plasma is achieved using medium-frequency excitation at a frequency of from 0 Hz to 10 MHz, at a power level of from 3.1 W/cm 2 to 8.3 W/cm 2, and a process gas pressure of from 0.04 to 0.15 mbar.