A semiconductor package, comprising: a first package substrate (112, 122, 230, 310) having a first side and a second side, the first side opposite the second side, the first package substrate comprising: a layer of semiconductor material; a first vertical ground interconnect structure (152, 162, 232, 242, 252, 322, 352) between the first side and the second side of the first package substrate; a second vertical ground interconnect structure (154, 164, 240, 244, 254, 324, 354) between the first side and the second side of the first package substrate; a third vertical ground interconnect structure (156, 166, 250, 246, 256, 326, 356) between the first side and the second side of the first package substrate, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure extend through the layer of the semiconductor material; and a ball pad (210, 220, 262, 264, 320, 350) on the second side of the first package substrate, the ball pad comprising copper, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure are in contact with the ball pad; and a die (110, 120) coupled to the first side of the first package substrate; and a second package substrate coupled to the second side of the first package substrate. a first package substrate (112, 122, 230, 310) having a first side and a second side, the first side opposite the second side, the first package substrate comprising: a layer of semiconductor material; a first vertical ground interconnect structure (152, 162, 232, 242, 252, 322, 352) between the first side and the second side of the first package substrate; a second vertical ground interconnect structure (154, 164, 240, 244, 254, 324, 354) between the first side and the second side of the first package substrate; a third vertical ground interconnect structure (156, 166, 250, 246, 256, 326, 356) between the first side and the second side of the first package substrate, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure extend through the layer of the semiconductor material; and a ball pad (210, 220, 262, 264, 320, 350) on the second side of the first package substrate, the ball pad comprising copper, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure are in contact with the ball pad; and a layer of semiconductor material; a first vertical ground interconnect structure (152, 162, 232, 242, 252, 322, 352) between the first side and the second side of the first package substrate; a second vertical ground interconnect structure (154, 164, 240, 244, 254, 324, 354) between the first side and the second side of the first package substrate; a third vertical ground interconnect structure (156, 166, 250, 246, 256, 326, 356) between the first side and the second side of the first package substrate, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure extend through the layer of the semiconductor material; and a ball pad (210, 220, 262, 264, 320, 350) on the second side of the first package substrate, the ball pad comprising copper, wherein the first vertical ground interconnect structure, the second vertical ground interconnect structure and the third vertical ground interconnect structure are in contact with the ball pad; and a die (110, 120) coupled to the first side of the first package substrate; and a second package substrate coupled to the second side of the first package substrate.