A method, comprising: forming first coil segments in a first electrically conductive layer of an active silicon chip, the active silicon chip having a processing circuit formed therein; forming an electrically insulating layer over the first electrically conductive layer; forming magnetic sense elements (24, 84, 142) over the electrically insulating layer, the magnetic sense elements being separated from the first coil segments in the first electrically conductive layer by the electrically insulating layer; forming a local interconnect layer (88, 154) for interconnecting the magnetic sense elements; forming a protective layer over the magnetic sense elements and the local interconnect layer; forming first conductive vias extending through the protective layer and the electrically insulating layer to electrically couple with the first coil segments; forming a second conductive via extending through the protective layer to electrically couple with a contact pad of the magnetic sense elements (24, 84, 142); forming a third conductive via extending through the protective layer and the electrically insulating layer to electrically couple with an electrical contact in the first electrically conductive layer, wherein the electrical contact is electrically coupled to the processing circuit; forming a conductive trace connecting the second and third conductive vias (110, 112) in a second electrically conductive layer; and forming second coil segments in the second electrically conductive layer over the protective layer, the second coil segments electrically coupling with the conductive vias to produce a coil structure of the first coil segments, the first conductive vias, and the second coil segments, and the coil structure surrounding the magnetic sense elements. forming first coil segments in a first electrically conductive layer of an active silicon chip, the active silicon chip having a processing circuit formed therein; forming an electrically insulating layer over the first electrically conductive layer; forming magnetic sense elements (24, 84, 142) over the electrically insulating layer, the magnetic sense elements being separated from the first coil segments in the first electrically conductive layer by the electrically insulating layer; forming a local interconnect layer (88, 154) for interconnecting the magnetic sense elements; forming a protective layer over the magnetic sense elements and the local interconnect layer; forming first conductive vias extending through the protective layer and the electrically insulating layer to electrically couple with the first coil segments; forming a second conductive via extending through the protective layer to electrically couple with a contact pad of the magnetic sense elements (24, 84, 142); forming a third conductive via extending through the protective layer and the electrically insulating layer to electrically couple with an electrical contact in the first electrically conductive layer, wherein the electrical contact is electrically coupled to the processing circuit; forming a conductive trace connecting the second and third conductive vias (110, 112) in a second electrically conductive layer; and forming second coil segments in the second electrically conductive layer over the protective layer, the second coil segments electrically coupling with the conductive vias to produce a coil structure of the first coil segments, the first conductive vias, and the second coil segments, and the coil structure surrounding the magnetic sense elements.