A group 13 nitride crystal having a hexagonal crystal structure containing a nitrogen atom and at least Ga, the group 13 nitride crystal comprising: a basal plane dislocation in a plurality of directions, wherein dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane; a first area (21A, 21B) provided to an inner side of a section intersecting a c-axis, the first area serving as a seed crystal; and a second area provided to an outside of the first area on the section and grown from the first area, characterised in that the first area has a third area provided inside of the section and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being lower than a peak intensity of the second peak, and a fourth area provided in a manner covering at least a part of the outer circumference of the third area and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being higher than a peak intensity of the second peak, the fourth area having a thickness of equal to or larger than 100nm, wherein the boron concentration of the third area is higher than the boron concentration of the fourth area. a basal plane dislocation in a plurality of directions, wherein dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane; a first area (21A, 21B) provided to an inner side of a section intersecting a c-axis, the first area serving as a seed crystal; and a second area provided to an outside of the first area on the section and grown from the first area, characterised in that the first area has a third area provided inside of the section and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being lower than a peak intensity of the second peak, and a fourth area provided in a manner covering at least a part of the outer circumference of the third area and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being higher than a peak intensity of the second peak, the fourth area having a thickness of equal to or larger than 100nm, wherein the boron concentration of the third area is higher than the boron concentration of the fourth area. a third area provided inside of the section and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being lower than a peak intensity of the second peak, and a fourth area provided in a manner covering at least a part of the outer circumference of the third area and having a first peak including band-edge emission of GaN in an emission spectrum caused by electron beam excitation or ultraviolet light excitation and a second peak on the longer-wavelength side than the first peak, a peak intensity of the first peak being higher than a peak intensity of the second peak, the fourth area having a thickness of equal to or larger than 100nm, wherein the boron concentration of the third area is higher than the boron concentration of the fourth area.