Component arrangement, comprising: • a carrier, wherein at least one electronic component is formed in the carrier; • a first metallization layer above the carrier, wherein the first metallization layer has a first metallic coupling structure which is coupled to the at least one electronic component; • a second metallization layer above the first metallization layer, wherein the second metallization layer has a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by means of at least one via; • a plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338) which extend at least between the first metallization layer and the second metallization layer and which are coupled to one another in an electrically conducting manner in such a way that they form a coil which has a coil region which is situated at an angle with respect to the main processing surface of the carrier; • a third metallization layer above the second metallization layer, wherein the third metallization layer has a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by means of at least one via (134, 208); and • wherein some of the additional vias (136, 138, 212, 304, 332, 334, 336, 338) extend at least between the first metallization layer and the third metallization layer; • wherein the coil has a plurality of coil windings; • wherein the at least two coil windings define the coil region; • wherein the plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338) extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated at an angle of greater than 0° to 85° with respect to the main processing surface of the carrier; • at least one additional carrier; • a first additional metallization layer above the additional carrier; • wherein the first additional metallization layer is coupled to at least some of the plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338), with the result that a part of the first additional metallization layer forms a part of the coil. • a carrier, wherein at least one electronic component is formed in the carrier; • a first metallization layer above the carrier, wherein the first metallization layer has a first metallic coupling structure which is coupled to the at least one electronic component; • a second metallization layer above the first metallization layer, wherein the second metallization layer has a second metallic coupling structure, wherein the first metallic coupling structure is coupled to the second metallic coupling structure by means of at least one via; • a plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338) which extend at least between the first metallization layer and the second metallization layer and which are coupled to one another in an electrically conducting manner in such a way that they form a coil which has a coil region which is situated at an angle with respect to the main processing surface of the carrier; • a third metallization layer above the second metallization layer, wherein the third metallization layer has a third metallic coupling structure, wherein the second metallic coupling structure is coupled to the third metallic coupling structure by means of at least one via (134, 208); and • wherein some of the additional vias (136, 138, 212, 304, 332, 334, 336, 338) extend at least between the first metallization layer and the third metallization layer; • wherein the coil has a plurality of coil windings; • wherein the at least two coil windings define the coil region; • wherein the plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338) extend at least between the first metallization layer and the second metallization layer in such a way that the coil region is situated at an angle of greater than 0° to 85° with respect to the main processing surface of the carrier; • at least one additional carrier; • a first additional metallization layer above the additional carrier; • wherein the first additional metallization layer is coupled to at least some of the plurality of additional vias (136, 138, 212, 304, 332, 334, 336, 338), with the result that a part of the first additional metallization layer forms a part of the coil.