A method for manufacturing a wide bandgap junction barrier Schottky diode having an anode side and a cathode side opposite to the anode side, wherein a cathode layer of a first conductivity type is arranged on the cathode side, at least one anode layer of a second conductivity type, which is different from the first conductivity type, is arranged on the anode side, a drift layer of the first conductivity type is arranged between the cathode layer and the at least one anode layer, which drift layer extends to the anode side, wherein the following manufacturing steps are performed: a) providing a wide bandgap substrate, which forms the cathode layer in the finalized diode, b) creating the drift layer on a side of the cathode layer opposite to the cathode side, c) creating the at least one anode layer on the drift layer on the anode side, d) applying a first metal layer having a first metal layer thickness on the anode side on top of the drift layer for forming a Schottky contact, which first metal layer contacts the drift layer, e) creating a second metal layer having a second metal layer thickness on top of at least one anode layer, which second metal layer contacts the at least one anode layer, wherein after having created the first and the second metal layer (5, 6), a total thickness of all metal layers on top of the at least one anode layer is a second thickness and a total thickness of all metal layers on top of the drift layer is a first thickness, wherein the second thickness is smaller than the first thickness, f) then performing a first heating step at a first temperature, the method being characterized in that in step (f), due to the second thickness being smaller than the first thickness, the temperature at an interface between the second metal layer and the at least one anode layer is such that an ohmic contact is formed at said interface between the second metal layer and the at least one anode layer, and the temperature at the interface between the first metal layer and the drift layer is kept below a temperature for forming an ohmic contact and is such that a Schottky contact is formed at said interface between the first metal layer and the drift layer. a) providing a wide bandgap substrate, which forms the cathode layer in the finalized diode, b) creating the drift layer on a side of the cathode layer opposite to the cathode side, c) creating the at least one anode layer on the drift layer on the anode side, d) applying a first metal layer having a first metal layer thickness on the anode side on top of the drift layer for forming a Schottky contact, which first metal layer contacts the drift layer, e) creating a second metal layer having a second metal layer thickness on top of at least one anode layer, which second metal layer contacts the at least one anode layer, f) then performing a first heating step at a first temperature, the method being characterized in that in step (f), due to the second thickness being smaller than the first thickness, the temperature at an interface between the second metal layer and the at least one anode layer is such that an ohmic contact is formed at said interface between the second metal layer and the at least one anode layer, and the temperature at the interface between the first metal layer and the drift layer is kept below a temperature for forming an ohmic contact and is such that a Schottky contact is formed at said interface between the first metal layer and the drift layer.