A light receiving and emitting element comprising: a substrate composed of a one-conductivity type semiconductor; a light emitting element which comprises a plurality of semiconductor layers stacked on an upper face of the substrate, the plurality of semiconductor layers comprising a one-conductivity type semiconductor layer and an opposed-conductivity type semiconductor layer; a light receiving element having an opposed-conductivity type semiconductor region in the substrate where opposed-conductivity type impurities are doped in a vicinity of an upper face of the substrate; an insulating layer formed so as to cover a surface of the light emitting element and the upper face of the substrate; and electrode pads (31A, 31B, 33A, 33B) connected to the substrate, the one-conductivity type semiconductor layer, the opposed-conductivity type semiconductor layer, and the opposed-conductivity type semiconductor region; wherein the electrode pad connected to the one-conductivity type semiconductor layer is electrically connected through a metal lump to an external power supply by a wire; and wherein the electrode pad connected to the opposed-conductivity type semiconductor layer is electrically connected through a metal lump to the external power supply by a wire; and wherein the electrode pad being connected to the substrate is disposed on a part of the upper face of the substrate which is between the light emitting element and the light receiving element, with a metal lump being joined to an upper face of the electrode pad having a thickness larger than a thickness of the light emitting element, or the electrode pad (31A, 31B, 33A) being connected to the one-conductivity type semiconductor layer, the opposed-conductivity type semiconductor layer, or the opposed-conductivity type semiconductor region is disposed on the upper face of the substrate through the insulating layer between the light emitting element and the light receiving element, with a metal lump being joined to an upper face of the electrode pad (31A, 31B, 33A) having a thickness larger than a thickness of the light emitting element. a substrate composed of a one-conductivity type semiconductor; a light emitting element which comprises a plurality of semiconductor layers stacked on an upper face of the substrate, the plurality of semiconductor layers comprising a one-conductivity type semiconductor layer and an opposed-conductivity type semiconductor layer; a light receiving element having an opposed-conductivity type semiconductor region in the substrate where opposed-conductivity type impurities are doped in a vicinity of an upper face of the substrate; an insulating layer formed so as to cover a surface of the light emitting element and the upper face of the substrate; and electrode pads (31A, 31B, 33A, 33B) connected to the substrate, the one-conductivity type semiconductor layer, the opposed-conductivity type semiconductor layer, and the opposed-conductivity type semiconductor region; wherein the electrode pad connected to the one-conductivity type semiconductor layer is electrically connected through a metal lump to an external power supply by a wire; and wherein the electrode pad connected to the opposed-conductivity type semiconductor layer is electrically connected through a metal lump to the external power supply by a wire; and wherein the electrode pad being connected to the substrate is disposed on a part of the upper face of the substrate which is between the light emitting element and the light receiving element, with a metal lump being joined to an upper face of the electrode pad having a thickness larger than a thickness of the light emitting element, or the electrode pad (31A, 31B, 33A) being connected to the one-conductivity type semiconductor layer, the opposed-conductivity type semiconductor layer, or the opposed-conductivity type semiconductor region is disposed on the upper face of the substrate through the insulating layer between the light emitting element and the light receiving element, with a metal lump being joined to an upper face of the electrode pad (31A, 31B, 33A) having a thickness larger than a thickness of the light emitting element.