Optoelectronic device comprising: - a first semiconductor layer stack, which has an active layer configured to emit radiation and a main surface, - a separation layer arranged on the main surface of the first semiconductor layer stack, wherein the separation layer forms a semi-transparent mirror, - a second semiconductor layer stack, which is arranged at the separation layer and which has a further active layer configured to emit radiation and a main surface, further comprising: - a contact element of the second semiconductor layer stack arranged on the main surface of the second semiconductor layer stack, - a first contact element of the first semiconductor layer stack arranged on a further main surface of the first semiconductor layer stack, wherein the further main surface is opposite to the main surface, - a second contact element of the first semiconductor layer stack arranged on a again further main surface of the first semiconductor layer stack in a recess of the first semiconductor layer stack extending through the active layer of the first semiconductor layer stack, wherein the again further main surface is spaced apart less far than the further main surface from the main surface, wherein - the first semiconductor layer stack is supplied with voltage by the first contact element and the second contact element, - the second semiconductor layer stack is supplied with voltage by the second contact element and the contact element of the second semiconductor layer stack, - the active layer of the first semiconductor layer stack is configured to emit radiation of a first wavelength range, and the active layer of the second semiconductor layer stack is configured to emit radiation of a second wavelength range, - the separating layer is transparent to radiation of the first wavelength range and is configured to reflect radiation of the second wavelength range, characterized in that - emitted radiation of the first semiconductor layer stack and emitted radiation of the second semiconductor layer stack emerges from the main surface of the second semiconductor layer stack. - a first semiconductor layer stack, which has an active layer configured to emit radiation and a main surface, - a separation layer arranged on the main surface of the first semiconductor layer stack, wherein the separation layer forms a semi-transparent mirror, - a second semiconductor layer stack, which is arranged at the separation layer and which has a further active layer configured to emit radiation and a main surface, - a contact element of the second semiconductor layer stack arranged on the main surface of the second semiconductor layer stack, - a first contact element of the first semiconductor layer stack arranged on a further main surface of the first semiconductor layer stack, wherein the further main surface is opposite to the main surface, - a second contact element of the first semiconductor layer stack arranged on a again further main surface of the first semiconductor layer stack in a recess of the first semiconductor layer stack extending through the active layer of the first semiconductor layer stack, wherein the again further main surface is spaced apart less far than the further main surface from the main surface, wherein - the first semiconductor layer stack is supplied with voltage by the first contact element and the second contact element, - the second semiconductor layer stack is supplied with voltage by the second contact element and the contact element of the second semiconductor layer stack, - the active layer of the first semiconductor layer stack is configured to emit radiation of a first wavelength range, and the active layer of the second semiconductor layer stack is configured to emit radiation of a second wavelength range, - the separating layer is transparent to radiation of the first wavelength range and is configured to reflect radiation of the second wavelength range, characterized in that - emitted radiation of the first semiconductor layer stack and emitted radiation of the second semiconductor layer stack emerges from the main surface of the second semiconductor layer stack.