A semiconductor light-emitting device, comprising: a substrate (012, 112, 212) and a multi-layer structure stacked on the substrate (012, 112, 212), the multi-layer structure comprising, in order from the substrate side, a second electrical connection layer (010, 110, 210), an insulating layer (009, 109, 209), a first electrical connection layer, and a semiconductor light-emitting sequence; the semiconductor light-emitting sequence comprising a first conductivity type semiconductor layer (004, 104, 204), a light-emitting layer (003, 103, 203) and a second conductivity type semiconductor layer (002, 102, 202) stacked from one side of the first electrical connection layer; a first electrode (013, 113, 213) for external wire bonding, electrically connected to the first conductivity type semiconductor layer (004, 104, 204) by the first electrical connection layer; a second electrode (014, 114, 214) for external wire bonding, electrically connected to the second conductivity type semiconductor layer (002, 102, 202) by the second electrical connection layer (010, 110, 210); wherein the semiconductor light-emitting sequence, the first electrode (013, 113, 213) and the second electrode (014, 114, 214) are located on the same side of the substrate (012, 112, 212), wherein the second electrical connection layer (010, 110, 210) comprises a first portion and a second portion, the first portion being located at one side of the insulating layer (009, 109, 209) away from the semiconductor light-emitting sequence, wherein the insulating layer (009, 109, 209) comprises one or more via, the second portion extending from the first portion through the one or more via of the insulating layer (009, 109, 209) to connect with the second electrode (014, 114, 214), wherein a third electrical connection layer, electrically insulated from the first electrical connection layer, is provided between the second portion of the second electrical connection layer (010, 110, 210) and the second electrode (014, 114, 214), wherein the first electrode (013, 113, 213) is located on the first electrical connection layer, at the side opposite to the insulating layer (009, 109, 209), wherein the second electrode (014, 114, 214) is located on the third electrical connection layer at the side opposite to the insulating layer (009, 109, 209), and wherein the opening of the one or more via in the insulating layer (009, 109, 209) is not located at a center position vertically below the second electrode (014, 114, 214), so that the second portion of the second electrical connection layer (010, 110, 210) that fills in the one or more via is not located at the center position vertically below the second electrode (014, 114, 214). a substrate (012, 112, 212) and a multi-layer structure stacked on the substrate (012, 112, 212), the multi-layer structure comprising, in order from the substrate side, a second electrical connection layer (010, 110, 210), an insulating layer (009, 109, 209), a first electrical connection layer, and a semiconductor light-emitting sequence; the semiconductor light-emitting sequence comprising a first conductivity type semiconductor layer (004, 104, 204), a light-emitting layer (003, 103, 203) and a second conductivity type semiconductor layer (002, 102, 202) stacked from one side of the first electrical connection layer; a first electrode (013, 113, 213) for external wire bonding, electrically connected to the first conductivity type semiconductor layer (004, 104, 204) by the first electrical connection layer; a second electrode (014, 114, 214) for external wire bonding, electrically connected to the second conductivity type semiconductor layer (002, 102, 202) by the second electrical connection layer (010, 110, 210); wherein the semiconductor light-emitting sequence, the first electrode (013, 113, 213) and the second electrode (014, 114, 214) are located on the same side of the substrate (012, 112, 212), wherein the second electrical connection layer (010, 110, 210) comprises a first portion and a second portion, the first portion being located at one side of the insulating layer (009, 109, 209) away from the semiconductor light-emitting sequence, wherein the insulating layer (009, 109, 209) comprises one or more via, the second portion extending from the first portion through the one or more via of the insulating layer (009, 109, 209) to connect with the second electrode (014, 114, 214), wherein a third electrical connection layer, electrically insulated from the first electrical connection layer, is provided between the second portion of the second electrical connection layer (010, 110, 210) and the second electrode (014, 114, 214), wherein the first electrode (013, 113, 213) is located on the first electrical connection layer, at the side opposite to the insulating layer (009, 109, 209), wherein the second electrode (014, 114, 214) is located on the third electrical connection layer at the side opposite to the insulating layer (009, 109, 209), and wherein the opening of the one or more via in the insulating layer (009, 109, 209) is not located at a center position vertically below the second electrode (014, 114, 214), so that the second portion of the second electrical connection layer (010, 110, 210) that fills in the one or more via is not located at the center position vertically below the second electrode (014, 114, 214).