A radio frequency, RF power generator including: an induction coil (26; 60) for exciting an inductively coupled plasma, ICP, for spectrometry; a switching circuit connectable across a DC power supply, the switching circuit including solid-state switching devices each having a gate electrode for receiving a gate drive voltage whereby the solid-state switching devices are alternately switchable ON and OFF for supplying RF power; a load circuit to which the RF power from the switching circuit is coupled, the load circuit including the induction coil (26; 60) and capacitance, the induction coil (26; 60) and capacitance being connected for parallel resonance; a gate drive circuit for each solid state switching device; characterised in that: the switching devices include four Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs, arranged in a full-bridge configuration; each gate drive circuit includes a portion that is mutually inductively coupled with a portion of the load circuit for the gate drive circuit to provide the gate drive voltage; said portion of the load circuit is a supporting lead (28; 80, 82) of the induction coil (26; 60); said portion of each gate drive circuit is an inductive loop (76, 77) which is provided by a conductive track on a printed circuit board; and said printed circuit board also has mounted thereon components of the switching circuit and gate drive circuits. an induction coil (26; 60) for exciting an inductively coupled plasma, ICP, for spectrometry; a switching circuit connectable across a DC power supply, the switching circuit including solid-state switching devices each having a gate electrode for receiving a gate drive voltage whereby the solid-state switching devices are alternately switchable ON and OFF for supplying RF power; a load circuit to which the RF power from the switching circuit is coupled, the load circuit including the induction coil (26; 60) and capacitance, the induction coil (26; 60) and capacitance being connected for parallel resonance; a gate drive circuit for each solid state switching device; characterised in that: the switching devices include four Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs, arranged in a full-bridge configuration; each gate drive circuit includes a portion that is mutually inductively coupled with a portion of the load circuit for the gate drive circuit to provide the gate drive voltage; said portion of the load circuit is a supporting lead (28; 80, 82) of the induction coil (26; 60); said portion of each gate drive circuit is an inductive loop (76, 77) which is provided by a conductive track on a printed circuit board; and said printed circuit board also has mounted thereon components of the switching circuit and gate drive circuits. the switching devices include four Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs, arranged in a full-bridge configuration; each gate drive circuit includes a portion that is mutually inductively coupled with a portion of the load circuit for the gate drive circuit to provide the gate drive voltage; said portion of the load circuit is a supporting lead (28; 80, 82) of the induction coil (26; 60); said portion of each gate drive circuit is an inductive loop (76, 77) which is provided by a conductive track on a printed circuit board; and said printed circuit board also has mounted thereon components of the switching circuit and gate drive circuits.