Method for manufacturing a mould for nanoprinting, comprising: • a provision of a substrate comprising a layer having an upper face and a lower face opposite the upper face, • at least one ion implantation in at least one portion of the layer, the ion implantation being configured, so as to obtain within the layer at least one first non-implanted portion or having a first implantation, and at least one second portion having a second implantation, the first implantation and the second implantation being different, the first and second portions each extending from said upper face, the ion implantation further defining a third non-implanted portion, extending at least from the first portion, to the lower face of the layer, • after or before implantation, the production of a so-called etching mask, surmounting the upper face and having a plurality of openings (130a, 130b), • after implantation, an etching of the layer configured so as to have a different etching speed at least between the second portion and the third portion, so as to etch through the openings (130a, 130b) of the etching mask, a plurality of patterns (114a, 114b) of different heights in the layer, at least one pattern extending into the first portion and at least one pattern extending into the second portion, the etching being configured to etch in the first portion, a first set of patterns and to etch in the second portion, a second set of patterns: i. the first set of patterns having a first pattern density D1 and a first height H1, ii. the second set of patterns having a second pattern density D2, and a second height H2, and wherein D2>D1, preferably the first implantation and the second implantation differ by at least one parameter from among: an implantation depth, a nature of the implanted ions, a dose of implanted ions. • a provision of a substrate comprising a layer having an upper face and a lower face opposite the upper face, • at least one ion implantation in at least one portion of the layer, the ion implantation being configured, so as to obtain within the layer at least one first non-implanted portion or having a first implantation, and at least one second portion having a second implantation, the first implantation and the second implantation being different, the first and second portions each extending from said upper face, the ion implantation further defining a third non-implanted portion, extending at least from the first portion, to the lower face of the layer, • after or before implantation, the production of a so-called etching mask, surmounting the upper face and having a plurality of openings (130a, 130b), • after implantation, an etching of the layer configured so as to have a different etching speed at least between the second portion and the third portion, so as to etch through the openings (130a, 130b) of the etching mask, a plurality of patterns (114a, 114b) of different heights in the layer, at least one pattern extending into the first portion and at least one pattern extending into the second portion, the etching being configured to etch in the first portion, a first set of patterns and to etch in the second portion, a second set of patterns: i. the first set of patterns having a first pattern density D1 and a first height H1, ii. the second set of patterns having a second pattern density D2, and a second height H2, and wherein D2>D1, i. the first set of patterns having a first pattern density D1 and a first height H1, ii. the second set of patterns having a second pattern density D2, and a second height H2, and wherein D2>D1,