A method of fabricating a display panel, comprising: forming a silicon semiconductor pattern on a base layer including a first region and a second region that is extended from the first region, the silicon semiconductor pattern overlapping the first region; forming a first thin film transistor comprising forming a first control electrode on the silicon semiconductor pattern, the first control electrode overlapping the silicon semiconductor pattern with a first insulating layer interposed therebetween; forming a second thin film transistor comprising forming a second control electrode to overlap the first region and to be spaced apart from the first control electrode with a second insulating layer interposed therebetween; forming an oxide semiconductor pattern on the second control electrode to overlap the second control electrode with a third insulating layer interposed therebetween; etching the first, second, and third insulating layers to form a first contact hole and a second contact hole exposing at least a portion of the silicon semiconductor pattern and a first groove (GV-21) that overlaps the second region; forming on the third insulating layer a first input electrode and a first output electrode that are connected to the silicon semiconductor pattern through the first and second contact holes, and a second input electrode and a second output electrode that are connected to the oxide semiconductor pattern; forming a fourth insulating layer on the third insulating layer to cover the first input electrode, the first output electrode, the second input electrode, and the second output electrode; wherein each of the etch rates of the second input electrode and the second output electrode that are etched by a fluoro compound are higher than that of the oxide semiconductor pattern, and thermally treating the fourth insulating layer at a temperature of 300°C or higher; and then: forming an organic layer to cover the fourth insulating layer; and forming on the organic layer an organic light emitting diode (OLED) that is connected to the first output. forming a silicon semiconductor pattern on a base layer including a first region and a second region that is extended from the first region, the silicon semiconductor pattern overlapping the first region; forming a first thin film transistor comprising forming a first control electrode on the silicon semiconductor pattern, the first control electrode overlapping the silicon semiconductor pattern with a first insulating layer interposed therebetween; forming a second thin film transistor comprising forming a second control electrode to overlap the first region and to be spaced apart from the first control electrode with a second insulating layer interposed therebetween; forming an oxide semiconductor pattern on the second control electrode to overlap the second control electrode with a third insulating layer interposed therebetween; etching the first, second, and third insulating layers to form a first contact hole and a second contact hole exposing at least a portion of the silicon semiconductor pattern and a first groove (GV-21) that overlaps the second region; forming on the third insulating layer a first input electrode and a first output electrode that are connected to the silicon semiconductor pattern through the first and second contact holes, and a second input electrode and a second output electrode that are connected to the oxide semiconductor pattern; forming a fourth insulating layer on the third insulating layer to cover the first input electrode, the first output electrode, the second input electrode, and the second output electrode; wherein each of the etch rates of the second input electrode and the second output electrode that are etched by a fluoro compound are higher than that of the oxide semiconductor pattern, and thermally treating the fourth insulating layer at a temperature of 300°C or higher; and then: forming an organic layer to cover the fourth insulating layer; and forming on the organic layer an organic light emitting diode (OLED) that is connected to the first output. forming an organic layer to cover the fourth insulating layer; and forming on the organic layer an organic light emitting diode (OLED) that is connected to the first output.