Method to produce a back-side contact system for a silicon thin-film solar cell with a pn-transition made of a silicon absorber layer and an emitter layer, comprising at least the process steps: - applying a TCO layer onto the emitter layer, - applying an organic insulation layer to the TCO layer, - then, generating contact holes (L2, L3) in the insulation layer up to the absorber and emitter layer, in which - holes for the contacts to the silicon absorption layer are generated in the insulation layer by initially generating them on future locations of the contacts to the silicon absorption layer in the organic insulation layer by means of pulsed UV laser marking without continuous material removal and these are then etched at at least a selective wet-chemical etching step initially up to the TCO layer, which serves as an etching stop layer, and then, at at least another etching step, they are etched to penetrate through the emitter layer to the silicone absorber layer, - then, they are generated in the organic insulation layer by means of intermittent UV laser marking without continuous material removal and these are then etched in at least a selective wet-chemical etching step initially up to the TCO layer, which serves as an etching stop layer as contacts to the emitter layer and - subsequent isolation of the contact holes takes place so that the emitter layer is insulated against the absorber layer in the contact holes, - after, attaching a low-melting metal layer to form n- and p-contacts in the contact holes (KA, KE), - separation of the metal layer in to areas contacting n and p by means of laser cutting and - afterwards, the created holes for the contacts to the Si-absorber layer are selectively doped. - applying a TCO layer onto the emitter layer, - applying an organic insulation layer to the TCO layer, - then, generating contact holes (L2, L3) in the insulation layer up to the absorber and emitter layer, in which - holes for the contacts to the silicon absorption layer are generated in the insulation layer by initially generating them on future locations of the contacts to the silicon absorption layer in the organic insulation layer by means of pulsed UV laser marking without continuous material removal and these are then etched at at least a selective wet-chemical etching step initially up to the TCO layer, which serves as an etching stop layer, and then, at at least another etching step, they are etched to penetrate through the emitter layer to the silicone absorber layer, - then, they are generated in the organic insulation layer by means of intermittent UV laser marking without continuous material removal and these are then etched in at least a selective wet-chemical etching step initially up to the TCO layer, which serves as an etching stop layer as contacts to the emitter layer and - subsequent isolation of the contact holes takes place so that the emitter layer is insulated against the absorber layer in the contact holes, - after, attaching a low-melting metal layer to form n- and p-contacts in the contact holes (KA, KE), - separation of the metal layer in to areas contacting n and p by means of laser cutting and - afterwards, the created holes for the contacts to the Si-absorber layer are selectively doped.