A spin transistor comprising: A first insulating layer disposed on a substrate; a first gate electrode and a source disposed on the first insulating layer, and a second insulating layer separating the first gate electrode from the source, the source comprising a magnetic material; a first gate insulating layer on the first gate electrode, and a first tunnel barrier on the source; a channel formed of a magnetic material configured to selectively pass a spin-polarized electron having a specific spin direction, disposed on the first tunnel barrier, the first gate insulating layer and the second insulating layer; a drain and a second gate electrode formed on the channel, and a third insulating layer separating the drain from the second gate electrode; a second gate insulating layer disposed between the second gate electrode and the channel; a second tunnel barrier disposed between the channel and the drain; wherein the source corresponds to the drain with respect to the channel and the first gate electrode corresponds to the second gate electrode with respect to the channel, so that a gate voltage applied to at least one of the first and second gate electrodes causes the spin-polarized electrons to move from the source to the drain, wherein the first gate electrode and the second gate electrode are configured to control a magnetization state of the channel to selectively pass the spin-polarized electrons injected from the source into the channel; wherein the source comprises: a metal layer disposed on the insulating layer; an anti-ferromagnetic layer on the metal layer; and a ferromagnetic layer disposed on the anti-ferromagnetic layer. A first insulating layer disposed on a substrate; a first gate electrode and a source disposed on the first insulating layer, and a second insulating layer separating the first gate electrode from the source, the source comprising a magnetic material; a first gate insulating layer on the first gate electrode, and a first tunnel barrier on the source; a channel formed of a magnetic material configured to selectively pass a spin-polarized electron having a specific spin direction, disposed on the first tunnel barrier, the first gate insulating layer and the second insulating layer; a drain and a second gate electrode formed on the channel, and a third insulating layer separating the drain from the second gate electrode; a second gate insulating layer disposed between the second gate electrode and the channel; a second tunnel barrier disposed between the channel and the drain; wherein the source corresponds to the drain with respect to the channel and the first gate electrode corresponds to the second gate electrode with respect to the channel, so that a gate voltage applied to at least one of the first and second gate electrodes causes the spin-polarized electrons to move from the source to the drain, wherein the first gate electrode and the second gate electrode are configured to control a magnetization state of the channel to selectively pass the spin-polarized electrons injected from the source into the channel; wherein the source comprises: a metal layer disposed on the insulating layer; an anti-ferromagnetic layer on the metal layer; and a ferromagnetic layer disposed on the anti-ferromagnetic layer. a metal layer disposed on the insulating layer; an anti-ferromagnetic layer on the metal layer; and a ferromagnetic layer disposed on the anti-ferromagnetic layer.