A photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens with a numeric aperture of one or more, wherein the photomask comprises a mask pattern with a duty ratio of 1.0 consisting of a light shielding film or semi-transparent film on a transparent substrate, wherein the mask pattern is a mask pattern for a semiconductor device with a half pitch of 60 nm or less, and wherein, given that the thickness, the refractive index, and the extinction factor of the light shielding film or semi-transparent film are "t" nm, "n", and "k", respectively, and a bias of a space part of the mask pattern is "d" nm, the ranges of "t", "d", "n" and "k" are one set selected from the following ranges: 0 < t ≤ 20, -100 ≤ d < -50, 0.5 ≤ n < 0.9, and 2.8 < k ≤ 3.0; 20 < t ≤ 40, -100 ≤ d < 0, 0.5 ≤ n < 2.9, and 1.6 < k ≤ 3.0; 40 < t ≤ 60, -100 ≤ d < 0, 0.5 ≤ n ≤ 2.9, and 1.0 < k ≤ 3.0; 60 < t ≤ 80, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.6 < k ≤ 3.0; 80 < t ≤ 160, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 160 < t ≤ 200, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.2 < k ≤ 3.0; 60 < t ≤ 120, -50 ≤ d < 0, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 120 < t ≤ 160, -50 ≤ d < 50, 0.5 ≤ n ≤ 2.9, and 0.2 < k ≤ 3.0; 40 < t ≤ 60, 0 ≤ d < 50, 0.5 ≤ n < 1.3, and 2.2 < k ≤ 3.0; 80 < t ≤ 120, 0 ≤ d < 50, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 140 < t ≤ 160, 50 ≤ d < 100, 0.5 ≤ n < 0.7, and 2.2 < k < 2.8; 160 < t ≤ 180, 50 ≤ d < 100, 0.5 ≤ n < 1.5, and 1.2 < k < 2.8; and 180 < t ≤ 200, 50 ≤ d < 100, 0.5 ≤ n < 2.1, and 0 < k < 2.8, wherein, in the photolithography using the photomask, an ArF excimer laser having an exposure wavelength of 193 nm is used, a numeric aperture of a projector lens is set to 1.3, and immersion exposure using pure water is employed, and c-quad with azimuthal polarization is set as an illumination system, wherein a pupil filter used in the c-quad with azimuthal polarization has a pupil of a sector shape such that, assuming that a pupil radius is one, an outer radius of an aperture is 0.95, an inner radius is 0.7, and an opening angle is 20°, and wherein the ranges of "t", "d", "n" and "k" are such that, when the photomask is used for the photolithography, optical image contrast within a photoresist of which the refractive index is 1.72 takes a value exceeding 0.580, wherein the optical image contrast within the photoresist is obtained by using three-dimensional electromagnetic field simulation of the photomask and obtained as an optical image contrast within a photoresist of which the refractive index is set to be 1.72 by solving Maxwell equations using a Non-constant scattering coefficient model with a Finite Difference Time Domain method after providing simulation grids for electromagnetic field analysis in the mask at 2.5 nm in the thickness direction of the mask and 3.0 nm in the pattern repetition direction on the mask dimensions. 0 < t ≤ 20, -100 ≤ d < -50, 0.5 ≤ n < 0.9, and 2.8 < k ≤ 3.0; 20 < t ≤ 40, -100 ≤ d < 0, 0.5 ≤ n < 2.9, and 1.6 < k ≤ 3.0; 40 < t ≤ 60, -100 ≤ d < 0, 0.5 ≤ n ≤ 2.9, and 1.0 < k ≤ 3.0; 60 < t ≤ 80, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.6 < k ≤ 3.0; 80 < t ≤ 160, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 160 < t ≤ 200, -100 ≤ d < -50, 0.5 ≤ n ≤ 2.9, and 0.2 < k ≤ 3.0; 60 < t ≤ 120, -50 ≤ d < 0, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 120 < t ≤ 160, -50 ≤ d < 50, 0.5 ≤ n ≤ 2.9, and 0.2 < k ≤ 3.0; 40 < t ≤ 60, 0 ≤ d < 50, 0.5 ≤ n < 1.3, and 2.2 < k ≤ 3.0; 80 < t ≤ 120, 0 ≤ d < 50, 0.5 ≤ n ≤ 2.9, and 0.4 < k ≤ 3.0; 140 < t ≤ 160, 50 ≤ d < 100, 0.5 ≤ n < 0.7, and 2.2 < k < 2.8; 160 < t ≤ 180, 50 ≤ d < 100, 0.5 ≤ n < 1.5, and 1.2 < k < 2.8; and 180 < t ≤ 200, 50 ≤ d < 100, 0.5 ≤ n < 2.1, and 0 < k < 2.8,