An opto-electronic structure, comprising: - a plurality of nano elements arranged side by side on a support layer (5, 7), wherein each nano element comprises at least a first conductivity type semiconductor nanosized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction, - a first electrode layer (8, 90) that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, wherein the first electrode layer (8, 90) is transparent, - a mirror provided on a second conductivity type semiconductor side of the structure, wherein the mirror is provided as a reflective material layer on the first electrode layer (8, 90), and further comprising a second electrode layer which electrically connects to the nanosized cores characterized in that the structure further comprises - a diffusion barrier layer over the mirror, - a eutectic bonding layer or a plated bonding layer over the diffusion barrier layer, - a transparent glass layer over the first electrode, wherein the transparent glass layer provides a planar surface for the mirror and the mirror electrically contacts the first electrode layer (8, 90) through an opening in the transparent glass layer, - the structure being flip-chip bonded onto contact electrodes on a carrier using the eutectic bonding layer or the plated bonding layer, and wherein a first portion of the carrier is electrically connected to the first electrode layer by the eutectic or the plated bonding layer, the diffusion barrier layer and the mirror, and a second portion of the carrier is connected to the second electrode layer by a wire. - a plurality of nano elements arranged side by side on a support layer (5, 7), wherein each nano element comprises at least a first conductivity type semiconductor nanosized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction, - a first electrode layer (8, 90) that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, wherein the first electrode layer (8, 90) is transparent, - a mirror provided on a second conductivity type semiconductor side of the structure, wherein the mirror is provided as a reflective material layer on the first electrode layer (8, 90), and further comprising a second electrode layer which electrically connects to the nanosized cores characterized in that the structure further comprises - a diffusion barrier layer over the mirror, - a eutectic bonding layer or a plated bonding layer over the diffusion barrier layer, - a transparent glass layer over the first electrode, wherein the transparent glass layer provides a planar surface for the mirror and the mirror electrically contacts the first electrode layer (8, 90) through an opening in the transparent glass layer, - the structure being flip-chip bonded onto contact electrodes on a carrier using the eutectic bonding layer or the plated bonding layer, and wherein a first portion of the carrier is electrically connected to the first electrode layer by the eutectic or the plated bonding layer, the diffusion barrier layer and the mirror, and a second portion of the carrier is connected to the second electrode layer by a wire.