A light emitting device comprising: a first light emitting structure comprising a first conductivity type first semiconductor layer, a first active layer under the first conductivity type first semiconductor layer, and a second conductivity type second semiconductor under the first active layer; a second light emitting structure comprising a first conductivity type third semiconductor layer, a second active layer under the first conductivity type third semiconductor layer, and a second conductivity type fourth semiconductor layer under the second active layer; a first electrode electrically connected to the second conductivity type second semiconductor under the first light emitting structure; a second electrode electrically connected to the second conductivity type fourth semiconductor layer under the second light emitting structure; a third electrode electrically connected to the first conductivity type first semiconductor layer and the first conductivity type third semiconductor layer under the first light emitting structure; a channel layer disposed around a lower portion of the first light emitting structure and disposed around a lower portion of the second light emitting structure, a first contact part at a lower region of the first conductivity type first semiconductor layer, a second contact part at a lower region of the first conductivity type third semiconductor layer, a first pad electrically connected to the first electrode; a second pad electrically connected to the second electrode, and a second connection wire electrically connecting the second electrode to the second pad, wherein the second connection wire is disposed under the first electrode, wherein the first electrode is disposed at a lower region of the first light emitting structure, wherein the second electrode is disposed at the lower region of the second light emitting structure, wherein a first protrusion part is disposed on a top surface of the first conductivity type first semiconductor layer and a second protrusion part is disposed on a top surface of the first conductivity type third semiconductor layer, wherein the first protrusion part is disposed corresponding to the first contact part and the second protrusion part is disposed corresponding to the second contact part, wherein roughness is disposed on top surfaces of the first light emitting structure and the second light emitting structure, wherein a first region of the channel layer makes contact with a bottom surface of the second conductivity second type semiconductor layer, and wherein a second region of the channel layer makes contact with a bottom surface of the second conductivity type fourth semiconductor layer. a first light emitting structure comprising a first conductivity type first semiconductor layer, a first active layer under the first conductivity type first semiconductor layer, and a second conductivity type second semiconductor under the first active layer; a second light emitting structure comprising a first conductivity type third semiconductor layer, a second active layer under the first conductivity type third semiconductor layer, and a second conductivity type fourth semiconductor layer under the second active layer; a first electrode electrically connected to the second conductivity type second semiconductor under the first light emitting structure; a second electrode electrically connected to the second conductivity type fourth semiconductor layer under the second light emitting structure; a third electrode electrically connected to the first conductivity type first semiconductor layer and the first conductivity type third semiconductor layer under the first light emitting structure; a channel layer disposed around a lower portion of the first light emitting structure and disposed around a lower portion of the second light emitting structure, a first contact part at a lower region of the first conductivity type first semiconductor layer, a second contact part at a lower region of the first conductivity type third semiconductor layer, a first pad electrically connected to the first electrode; a second pad electrically connected to the second electrode, and a second connection wire electrically connecting the second electrode to the second pad, wherein the second connection wire is disposed under the first electrode, wherein the first electrode is disposed at a lower region of the first light emitting structure, wherein the second electrode is disposed at the lower region of the second light emitting structure, wherein a first protrusion part is disposed on a top surface of the first conductivity type first semiconductor layer and a second protrusion part is disposed on a top surface of the first conductivity type third semiconductor layer, wherein the first protrusion part is disposed corresponding to the first contact part and the second protrusion part is disposed corresponding to the second contact part, wherein roughness is disposed on top surfaces of the first light emitting structure and the second light emitting structure, wherein a first region of the channel layer makes contact with a bottom surface of the second conductivity second type semiconductor layer, and wherein a second region of the channel layer makes contact with a bottom surface of the second conductivity type fourth semiconductor layer.