A method for writing and reading a magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction formed from a sense layer having a magnetization direction that can be freely aligned, a storage layer having a magnetization direction that can be switched when the magnetic tunnel junction is heated to a high temperature threshold and that is pinned when the magnetic tunnel junction is at a low temperature threshold, and an instating layer being disposed between the sense and the storage layers; a field line in communication with the magnetic tunnel junction; and a current line electrically connected to the magnetic tunnel junction the method comprising the steps of: during a read operation, providing a first read field current to the field line inducing a first read magnetic field such as to align the magnetization of said sense layer in a first aligned direction in accordance to a first polarity of the first read magnetic field; and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction; and providing a second read field current to the field line; inducing a second read magnetic field such as to align the magnetization of the sense layer in a second aligned direction in accordance to a second polarity of the second read magnetic field; comparing said write data with said second aligned direction by measuring a second resistance value of said magnetic tunnel junction; determining a difference between the first resistance value and the second resistance value. the method characterized in that it comprises the further steps of: during a write operation, passing a saturation field current in the field line to induce a saturation magnetic field; saturating the magnetization of the sense layer in a direction according to the induced saturation magnetic field for inducing a local magnetic stray field; and switching said magnetization of said storage layer according to the local magnetic stray field. during a read operation, providing a first read field current to the field line inducing a first read magnetic field such as to align the magnetization of said sense layer in a first aligned direction in accordance to a first polarity of the first read magnetic field; and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction; and providing a second read field current to the field line; inducing a second read magnetic field such as to align the magnetization of the sense layer in a second aligned direction in accordance to a second polarity of the second read magnetic field; comparing said write data with said second aligned direction by measuring a second resistance value of said magnetic tunnel junction; determining a difference between the first resistance value and the second resistance value. during a write operation, passing a saturation field current in the field line to induce a saturation magnetic field; saturating the magnetization of the sense layer in a direction according to the induced saturation magnetic field for inducing a local magnetic stray field; and switching said magnetization of said storage layer according to the local magnetic stray field. passing a saturation field current in the field line to induce a saturation magnetic field; saturating the magnetization of the sense layer in a direction according to the induced saturation magnetic field for inducing a local magnetic stray field; and switching said magnetization of said storage layer according to the local magnetic stray field.