A semiconductor device, comprising a memory chip and a temperature detection module, the temperature detection module being configured to detect a temperature of the memory chip, the temperature detection module comprising: a temperature detection unit, wherein the temperature detection unit comprises a temperature sensitive unit and an adjustable resistor unit, an electrical conductivity of the temperature sensitive unit changes with the change of temperature, the temperature sensitive unit is a diode, and the adjustable resistor unit is connected in parallel with the diode, wherein the temperature detection unit is configured to be calibrated by adjusting a resistance value of the adjustable resistor unit, wherein the adjustable resistor unit comprises multiple sub-resistors (R1n) and multiple switches (S1n), the sub-resistors (R1n) are connected in series, each of the switches (S1n) is connected in parallel with at least one of the sub-resistors (R1n), and the resistance value of the adjustable resistor unit is changed by changing switching-on and switching-off of the multiple switches (S1n), wherein the temperature detection unit further comprises a fixed resistor (Ra), the fixed resistor (Ra) is connected in series with the diode, the fixed resistor (Ra) is provided with a first end and a second end, the first end of the fixed resistor (Ra) is electrically connected with a power supply (Vtemp), and the second end of the fixed resistor (Ra) is electrically connected with the diode, wherein a positive end of the diode is electrically connected with the second end of the fixed resistor (Ra), and a negative end of the diode is electrically connected with a grounding terminal, wherein the adjustable resistor unit comprises a first end and a second end, the sub-resistors (R1n) are disposed between the first end of the adjustable resistor unit and the second end of the adjustable resistor unit, the first end of the adjustable resistor unit is electrically connected with the grounding terminal, and the second end of the adjustable resistor unit is directly connected with the second end of the fixed resistor (Ra). a temperature detection unit, wherein the temperature detection unit comprises a temperature sensitive unit and an adjustable resistor unit, an electrical conductivity of the temperature sensitive unit changes with the change of temperature, the temperature sensitive unit is a diode, and the adjustable resistor unit is connected in parallel with the diode, wherein the temperature detection unit is configured to be calibrated by adjusting a resistance value of the adjustable resistor unit, wherein the adjustable resistor unit comprises multiple sub-resistors (R1n) and multiple switches (S1n), the sub-resistors (R1n) are connected in series, each of the switches (S1n) is connected in parallel with at least one of the sub-resistors (R1n), and the resistance value of the adjustable resistor unit is changed by changing switching-on and switching-off of the multiple switches (S1n), wherein the temperature detection unit further comprises a fixed resistor (Ra), the fixed resistor (Ra) is connected in series with the diode, the fixed resistor (Ra) is provided with a first end and a second end, the first end of the fixed resistor (Ra) is electrically connected with a power supply (Vtemp), and the second end of the fixed resistor (Ra) is electrically connected with the diode, wherein a positive end of the diode is electrically connected with the second end of the fixed resistor (Ra), and a negative end of the diode is electrically connected with a grounding terminal, wherein the adjustable resistor unit comprises a first end and a second end, the sub-resistors (R1n) are disposed between the first end of the adjustable resistor unit and the second end of the adjustable resistor unit, the first end of the adjustable resistor unit is electrically connected with the grounding terminal, and the second end of the adjustable resistor unit is directly connected with the second end of the fixed resistor (Ra).