Method of collective manufacturing of light-emitting diode devices comprising formation on a surface of a first substrate of a plurality of elemental LED structures each comprising at least one n-type layer (132; 332), an active layer (133; 333) and a p-type layer (134; 334), the elemental LED structures (150; 350) being spaced apart from each other on the first substrate by trenches (160; 360), the method further comprising: - reduction of the lateral dimensions of the p-type layer, the active layer and a first part of the n-type layer in contact with the active layer, the n-type layer having a second part with lateral dimensions larger than said first part of the n-type layer; - deposition of an insulating material layer (139; 339) on at least each elemental structure (150; 350); - formation of a portion of insulating material on the sides of the p-type layer, the active layer and the first part of the n-type layer; - formation of n-type electrical contact pads on at least the whole of the second part of the exposed n-type layer; - formation of p-type electrical contact pads before or after said lateral dimension reduction step; the method being characterized in that it further comprises: - deposition of a conductive material layer on the whole of the surface of the first substrate comprising the elemental LED structures and polishing said conductive material layer, said polishing being carried out until reaching at least the part of the insulating material layer present between the p- and n-type electrical contact pads (138, 145) so as to form a structure comprising individual portions of the conductive material layer, each individual portion being in contact with one or more n-type electrical contact pads; and - bonding by molecular adhesion of a second substrate on the polished surface of said structure. - reduction of the lateral dimensions of the p-type layer, the active layer and a first part of the n-type layer in contact with the active layer, the n-type layer having a second part with lateral dimensions larger than said first part of the n-type layer; - deposition of an insulating material layer (139; 339) on at least each elemental structure (150; 350); - formation of a portion of insulating material on the sides of the p-type layer, the active layer and the first part of the n-type layer; - formation of n-type electrical contact pads on at least the whole of the second part of the exposed n-type layer; - formation of p-type electrical contact pads before or after said lateral dimension reduction step; the method being characterized in that it further comprises: - deposition of a conductive material layer on the whole of the surface of the first substrate comprising the elemental LED structures and polishing said conductive material layer, said polishing being carried out until reaching at least the part of the insulating material layer present between the p- and n-type electrical contact pads (138, 145) so as to form a structure comprising individual portions of the conductive material layer, each individual portion being in contact with one or more n-type electrical contact pads; and - bonding by molecular adhesion of a second substrate on the polished surface of said structure.