A method for fabricating nanometer and micrometer structures with continuous surfaces and slopes using thermally reflowed photoresist technology, comprising the following steps: (i) coating of one or more layers of polymer on a substrate, where at least one of the polymer layers is a radiation sensitive resists with specific high molecular weight which can be transferred into low molecular weight by electron beam exposure; or where the material is a crosslinked polymer, from which only the exposed entities will be transferred into polymers able to flow; (ii) heating of the photoresist layer; (iii) using photolithography with a high accelerating voltage in an electron beam direct writing manner to expose a pattern on said layer of radiation sensitive resist for forming a pattern made from different local doses; the molecular weight is modified according to the dose; wherein the radiation sensitive resist after exposure contains different molecular weights, at least one layer of polymer has a molecular weight below and one layer of polymer above 10k, wherein these two layers of polymer have different glass transitions; (iv) using a developer and an etchant for developing and etching in order to form a recess area in the exposed areas; due to the different molecular weights, the etch speed is different and thus the etching depth in vertical direction; (v) stopping the developing at a specific time to obtain a height profile according to the doses; (vi) because of the limited time for development, which is determined by the time needed for the structures with the highest doses to be completely etched away, the photoresist is only partially removed in area with lower doses; (vi) after the etching of the photoresist, reflowing the photoresist within a predetermined period of time and temperature, such that the part of the photoresist with a glass temperature lower than the temperature begins to flow; depending on the temperature used, and the difference of the local glass temperature with respect to the temperature, different states are obtained in the same resist; and (vii) after obtaining the surface relief with stepped and continuous structures by reflow, etching the photoresist into the underlying substrate using plasma based reactive ion etching processes with no significant dependence on the molecular weight thereby etching highly anisotropic and proportional in depth. (i) coating of one or more layers of polymer on a substrate, where at least one of the polymer layers is a radiation sensitive resists with specific high molecular weight which can be transferred into low molecular weight by electron beam exposure; or where the material is a crosslinked polymer, from which only the exposed entities will be transferred into polymers able to flow; (ii) heating of the photoresist layer; (iii) using photolithography with a high accelerating voltage in an electron beam direct writing manner to expose a pattern on said layer of radiation sensitive resist for forming a pattern made from different local doses; the molecular weight is modified according to the dose; wherein the radiation sensitive resist after exposure contains different molecular weights, at least one layer of polymer has a molecular weight below and one layer of polymer above 10k, wherein these two layers of polymer have different glass transitions; (iv) using a developer and an etchant for developing and etching in order to form a recess area in the exposed areas; due to the different molecular weights, the etch speed is different and thus the etching depth in vertical direction; (v) stopping the developing at a specific time to obtain a height profile according to the doses; (vi) because of the limited time for development, which is determined by the time needed for the structures with the highest doses to be completely etched away, the photoresist is only partially removed in area with lower doses; (vi) after the etching of the photoresist, reflowing the photoresist within a predetermined period of time and temperature, such that the part of the photoresist with a glass temperature lower than the temperature begins to flow; depending on the temperature used, and the difference of the local glass temperature with respect to the temperature, different states are obtained in the same resist; and (vii) after obtaining the surface relief with stepped and continuous structures by reflow, etching the photoresist into the underlying substrate using plasma based reactive ion etching processes with no significant dependence on the molecular weight thereby etching highly anisotropic and proportional in depth.