Analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40) for a field effect transistor having a movable gate structure, comprising: a measuring circuit, which is coupled on a supply voltage terminal (V DD) of the analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40), which can be coupled on a drain terminal of the field effect transistor, and which is designed to output a measurement signal (I out; V out) at a measurement terminal (S out), said measurement signal being dependent on the current intensity of a current flowing through the field effect transistor, characterized by an impedance converter circuit having a reference voltage terminal (V ref), said impedance converter circuit being coupled on the measuring circuit, which can be coupled on the drain terminal of the field effect transistor, and being designed to hold the drain terminal of the field effect transistor at the potential of a reference voltage applied to the reference voltage terminal (V ref), wherein the impedance converter circuit has: a source follower transistor, which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor, an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor, and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref). a measuring circuit, which is coupled on a supply voltage terminal (V DD) of the analysis circuit (1; 10; 10'; 10''; 10'''; 20; 30; 40), which can be coupled on a drain terminal of the field effect transistor, and which is designed to output a measurement signal (I out; V out) at a measurement terminal (S out), said measurement signal being dependent on the current intensity of a current flowing through the field effect transistor, characterized by an impedance converter circuit having a reference voltage terminal (V ref), said impedance converter circuit being coupled on the measuring circuit, which can be coupled on the drain terminal of the field effect transistor, and being designed to hold the drain terminal of the field effect transistor at the potential of a reference voltage applied to the reference voltage terminal (V ref), wherein the impedance converter circuit has: a source follower transistor, which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor, an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor, and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref). a source follower transistor, which is coupled on the measuring circuit and which can be coupled on the drain terminal of the field effect transistor; and an operational amplifier having an output terminal, which is coupled to a gate terminal of the source follower transistor, an inverting input terminal, which can be coupled to the drain terminal of the field effect transistor, and a noninverting input terminal, which is coupled to the reference voltage terminal (V ref).