A method for producing a single crystal silicon solar cell, the solar cell including a transparent insulator substrate and a single crystal silicon layer arranged over the transparent insulator substrate and acting as a light conversion layer, the method comprising at least the steps of: preparing the transparent insulator substrate made of any one of crystallized glass, borosilicate glass, and soda-lime glass and a single crystal silicon substrate having a first conductivity type; implanting at least one of hydrogen ions and rare gas ions into the single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on at least one surface of the transparent insulator substrate by at least one of a reactive sputtering method, a reactive vapor deposition method, a CVD method, and a dip coating method; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; forming a diffusion layer having a second conductivity type in the single crystal silicon layer, which conductivity type is different from the first conductivity type, in a manner that a p-n junction is formed in the single crystal silicon layer; and forming an electrode on the single crystal silicon layer. preparing the transparent insulator substrate made of any one of crystallized glass, borosilicate glass, and soda-lime glass and a single crystal silicon substrate having a first conductivity type; implanting at least one of hydrogen ions and rare gas ions into the single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on at least one surface of the transparent insulator substrate by at least one of a reactive sputtering method, a reactive vapor deposition method, a CVD method, and a dip coating method; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; forming a diffusion layer having a second conductivity type in the single crystal silicon layer, which conductivity type is different from the first conductivity type, in a manner that a p-n junction is formed in the single crystal silicon layer; and forming an electrode on the single crystal silicon layer.