A pixel (100, 200) for a global shutter pixel array, the pixel comprising a sensing layer and a storage layer (120, 140), the sensing layer comprising: - a sensing element adapted to provide charges upon receiving radiation, - a first floating diffusion region for receiving charges from the sensing element, the storage layer comprising: - at least one storage node for receiving charges from the first floating diffusion region of the sensing layer and for storing said charges, wherein the sensing layer and storage layer form a stack of layers, the sensing layer covering at least the storage node of the storage layer and the stack further comprising a light shield at least between the sensing layer and the storage node of the storage layer so the storage node is shielded from radiation, wherein the storage node is provided between two transfer gates (TX1, TX2), characterized in that - the first floating diffusion region is common to the sensing layer and the storage layer, and - the storage node and the two transfer gates (TX1, TX2) are provided between the first floating diffusion region and a second floating diffusion region, so that the two transfer gates (TX1, TX2) are arranged to control the transfer of charges from the first floating diffusion region to the storage node and from the storage node to the second floating diffusion region respectively, wherein the storage node and the two transfer gates (TX1, TX2) are provided on the storage layer. the sensing layer comprising: - a sensing element adapted to provide charges upon receiving radiation, - a first floating diffusion region for receiving charges from the sensing element, - a sensing element adapted to provide charges upon receiving radiation, - a first floating diffusion region for receiving charges from the sensing element, the storage layer comprising: - at least one storage node for receiving charges from the first floating diffusion region of the sensing layer and for storing said charges, - at least one storage node for receiving charges from the first floating diffusion region of the sensing layer and for storing said charges, wherein the sensing layer and storage layer form a stack of layers, the sensing layer covering at least the storage node of the storage layer and the stack further comprising a light shield at least between the sensing layer and the storage node of the storage layer so the storage node is shielded from radiation, wherein the storage node is provided between two transfer gates (TX1, TX2), characterized in that - the first floating diffusion region is common to the sensing layer and the storage layer, and - the storage node and the two transfer gates (TX1, TX2) are provided between the first floating diffusion region and a second floating diffusion region, so that the two transfer gates (TX1, TX2) are arranged to control the transfer of charges from the first floating diffusion region to the storage node and from the storage node to the second floating diffusion region respectively, wherein the storage node and the two transfer gates (TX1, TX2) are provided on the storage layer. - the first floating diffusion region is common to the sensing layer and the storage layer, and - the storage node and the two transfer gates (TX1, TX2) are provided between the first floating diffusion region and a second floating diffusion region, so that the two transfer gates (TX1, TX2) are arranged to control the transfer of charges from the first floating diffusion region to the storage node and from the storage node to the second floating diffusion region respectively, wherein the storage node and the two transfer gates (TX1, TX2) are provided on the storage layer.