Light emitting diode comprising: a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on a substrate; mesa-etched areas formed in a hole type from the surface of the second conductivity type semiconductor layer to the surface of the first semiconductor layer; a reflective electrode formed on the second conductivity type semiconductor layer; a lower insulation layer covering an overall surface of the structure formed by the first conductivity type semiconductor layer, the active layer, the second conductivity type semiconductor layer, the mesa-etched areas and the reflective electrode, with the lower insulation layer allowing an upper surface of the reflective electrode to be partially exposed therethrough and further allowing the surface of the first semiconductor layer to be exposed therethrough in the mesa-etched areas; a current spreading layer formed on the lower insulation layer covering the first conductivity type semiconductor layer and being electrically connected to the first conductivity type semiconductor layer, wherein the reflective electrodes are electrically isolated from the current spreading layer by the lower insulation layer, wherein the current spreading layer is formed over the entirety of the upper surface of the substrate and partially exposes the reflective electrode; an upper insulation layer formed on the current spreading layer, with both the current spreading layer and the reflective electrode being partially exposed through the upper insulation layer; a first pad electrically connected to the current spreading layer exposed through the upper insulation layer; and a second pad electrically connected to the reflective electrode exposed through the upper insulation layer, wherein each of the first pad and the second pad covers a surface region of the structure formed by the first conductivity type semiconductor layer, the active layer, the second conductivity type semiconductor layer, the reflective electrode, the lower insulation layer, the current spreading layer, and the upper insulation layer, characterized in that each of the first pad and the second pad covers a surface region of the structure formed by the mesa-etched areas. a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on a substrate; mesa-etched areas formed in a hole type from the surface of the second conductivity type semiconductor layer to the surface of the first semiconductor layer; a reflective electrode formed on the second conductivity type semiconductor layer; a lower insulation layer covering an overall surface of the structure formed by the first conductivity type semiconductor layer, the active layer, the second conductivity type semiconductor layer, the mesa-etched areas and the reflective electrode, with the lower insulation layer allowing an upper surface of the reflective electrode to be partially exposed therethrough and further allowing the surface of the first semiconductor layer to be exposed therethrough in the mesa-etched areas; a current spreading layer formed on the lower insulation layer covering the first conductivity type semiconductor layer and being electrically connected to the first conductivity type semiconductor layer, wherein the reflective electrodes are electrically isolated from the current spreading layer by the lower insulation layer, wherein the current spreading layer is formed over the entirety of the upper surface of the substrate and partially exposes the reflective electrode; an upper insulation layer formed on the current spreading layer, with both the current spreading layer and the reflective electrode being partially exposed through the upper insulation layer; a first pad electrically connected to the current spreading layer exposed through the upper insulation layer; and a second pad electrically connected to the reflective electrode exposed through the upper insulation layer, wherein each of the first pad and the second pad covers a surface region of the structure formed by the first conductivity type semiconductor layer, the active layer, the second conductivity type semiconductor layer, the reflective electrode, the lower insulation layer, the current spreading layer, and the upper insulation layer, characterized in that each of the first pad and the second pad covers a surface region of the structure formed by the mesa-etched areas.