A method for bonding two substrates thereby realizing electrical and mechanical contact between a first conducting material on a first substrate and a second conducting material on a second substrate, the method comprising: (a) receiving a first intermetallic layer on the first conducting material on the first substrate, wherein the first intermetallic layer is brittle, has a roughness such that it breaks upon contacting the solder material part with a low pressure being a pressure of 50MPa or lower, wherein the first intermetallic layer is realized by the steps of depositing a second metal layer on the first conducting material, being a first metal layer and reacting the first metal layer with the second metal layer to realize the first intermetallic layer; (b) removing excess second metal material from the intermetallic layer, (c) receiving a solder material on the second conducting material on the second substrate, wherein the solder material has a lower melting point than the first and second conducting materials and the first intermetallic layer, and wherein the solder material is softer than the intermetallic layer (d) bringing the solder material in contact with the first intermetallic layer at a temperature below the melting temperature of the solder material thereby breaking at the low pressure the first intermetallic layer; (e) bringing the solder material in closer contact with the first intermetallic layer at a temperature below the melting temperature of the solder material such that the solder material fills at least part of the holes in the surface of the first intermetallic layer after breaking the first intermetallic layer; and thereafter, (f) realizing a second intermetallic layer at the interface between the solder material and the first intermetallic layer at a temperature below the melting temperature of the solder material thereby bonding the two substrates, wherein the first intermetallic layer is a CuSn intermetallic, the first conducting layer is a Cu layer and the second metal layer is Sn layer. (a) receiving a first intermetallic layer on the first conducting material on the first substrate, wherein the first intermetallic layer is brittle, has a roughness such that it breaks upon contacting the solder material part with a low pressure being a pressure of 50MPa or lower, wherein the first intermetallic layer is realized by the steps of depositing a second metal layer on the first conducting material, being a first metal layer and reacting the first metal layer with the second metal layer to realize the first intermetallic layer; (b) removing excess second metal material from the intermetallic layer, (c) receiving a solder material on the second conducting material on the second substrate, wherein the solder material has a lower melting point than the first and second conducting materials and the first intermetallic layer, and wherein the solder material is softer than the intermetallic layer (d) bringing the solder material in contact with the first intermetallic layer at a temperature below the melting temperature of the solder material thereby breaking at the low pressure the first intermetallic layer; (e) bringing the solder material in closer contact with the first intermetallic layer at a temperature below the melting temperature of the solder material such that the solder material fills at least part of the holes in the surface of the first intermetallic layer after breaking the first intermetallic layer; and thereafter, (f) realizing a second intermetallic layer at the interface between the solder material and the first intermetallic layer at a temperature below the melting temperature of the solder material thereby bonding the two substrates,