A solid-state imaging device comprising: a first semiconductor substrate (41, 43) stacked on a second semiconductor substrate (71, 72), the first semiconductor substrate (41, 43) comprising a light incident face side and a wiring layer formed on the opposite side of the first semiconductor substrate, the wiring layer of the first semiconductor substrate (41, 43) being joined to a back surface side of the second semiconductor substrate (71, 72), wherein the second semiconductor substrate (71, 72) comprises a wiring layer on the opposite side of said back surface, the first semiconductor substrate (41, 43) including: a photoelectric conversion portion that photoelectrically converts incident light; and a transfer transistor that transfers an electric charge of the photoelectric conversion portion, and a light blocking film formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion, the second semiconductor substrate (71, 72) including a charge/voltage retention portion that retains the electric charge transferred by the transfer transistor or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate (71, 72), and transmits the electric charge transferred from the transfer transistor or the voltage to the charge/voltage retention portion, wherein the light blocking film is formed above the charge/voltage retention portion. a first semiconductor substrate (41, 43) stacked on a second semiconductor substrate (71, 72), the first semiconductor substrate (41, 43) comprising a light incident face side and a wiring layer formed on the opposite side of the first semiconductor substrate, the wiring layer of the first semiconductor substrate (41, 43) being joined to a back surface side of the second semiconductor substrate (71, 72), wherein the second semiconductor substrate (71, 72) comprises a wiring layer on the opposite side of said back surface, the first semiconductor substrate (41, 43) including: a photoelectric conversion portion that photoelectrically converts incident light; and a transfer transistor that transfers an electric charge of the photoelectric conversion portion, and a light blocking film formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion, the second semiconductor substrate (71, 72) including a charge/voltage retention portion that retains the electric charge transferred by the transfer transistor or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate (71, 72), and transmits the electric charge transferred from the transfer transistor or the voltage to the charge/voltage retention portion, wherein the light blocking film is formed above the charge/voltage retention portion. a photoelectric conversion portion that photoelectrically converts incident light; and a transfer transistor that transfers an electric charge of the photoelectric conversion portion, and a light blocking film formed with a metallic wiring line that is part of the wiring layer formed below the photoelectric conversion portion, the second semiconductor substrate (71, 72) including a charge/voltage retention portion that retains the electric charge transferred by the transfer transistor or a voltage corresponding to the electric charge; and a through electrode that penetrates the second semiconductor substrate (71, 72), and transmits the electric charge transferred from the transfer transistor or the voltage to the charge/voltage retention portion, wherein the light blocking film is formed above the charge/voltage retention portion.