An organic light emitting display device (OLED) comprising: a substrate (200, 300) having a first TFT region, a second TFT region, an opening region, and an interconnection region; the substrate (200, 300) further having a first thin film transistor arranged in the first TFT region, a second TFT arranged in the second TFT region, and a metal interconnection (220, 310) arranged in the interconnection region; a planarization layer (280, 385) disposed on the substrate (200, 300) having the first TFT, the second TFT, and the metal interconnection (220, 310); a plurality of contact holes (285, 387) disposed in predetermined regions of the planarization layer (280, 385) to expose predetermined regions of first source (240s, 330s) and drain (240d, 330d) regions of the first TFT, second source (245s, 335s) and drain (245d, 335d) regions of the second TFT, and the metal interconnection (220, 310); a first interconnection (292, 392) disposed directly on the planarization layer (280, 385), one of the end portions of the first interconnection being in contact with the metal interconnection (220, 310) and one of the first source (240s, 330s) and drain (240d, 330d) regions respectively through the contact holes (285, 387), thereby electrically connecting the metal interconnection (220, 310) with the one of the first source (240s, 330s) and drain (240d, 330d) regions; a second interconnection (293, 393) disposed directly on the planarization layer (280, 385); one of the end portions of the second interconnection (293, 393) being in contact with the other of the first source (240s, 330s) and drain (240d, 330d) regions and one of the second source (245s, 335s) and drain (245d, 335d) regions respectively through the contact holes (285, 387), thereby electrically connecting the other of the first source (240s, 330s) and drain (240d, 330d) with the one of the second source (245s, 335s) and drain (245d, 335d) regions; a first electrode (291, 391) disposed directly on the planarization layer (280, 385), one of the end portions of the first electrode (291, 391) being in contact with the other of the second source (245s, 335s) and drain (245d, 335d) regions through the contact holes (285, 387). a substrate (200, 300) having a first TFT region, a second TFT region, an opening region, and an interconnection region; the substrate (200, 300) further having a first thin film transistor arranged in the first TFT region, a second TFT arranged in the second TFT region, and a metal interconnection (220, 310) arranged in the interconnection region; a planarization layer (280, 385) disposed on the substrate (200, 300) having the first TFT, the second TFT, and the metal interconnection (220, 310); a plurality of contact holes (285, 387) disposed in predetermined regions of the planarization layer (280, 385) to expose predetermined regions of first source (240s, 330s) and drain (240d, 330d) regions of the first TFT, second source (245s, 335s) and drain (245d, 335d) regions of the second TFT, and the metal interconnection (220, 310); a first interconnection (292, 392) disposed directly on the planarization layer (280, 385), one of the end portions of the first interconnection being in contact with the metal interconnection (220, 310) and one of the first source (240s, 330s) and drain (240d, 330d) regions respectively through the contact holes (285, 387), thereby electrically connecting the metal interconnection (220, 310) with the one of the first source (240s, 330s) and drain (240d, 330d) regions; a second interconnection (293, 393) disposed directly on the planarization layer (280, 385); one of the end portions of the second interconnection (293, 393) being in contact with the other of the first source (240s, 330s) and drain (240d, 330d) regions and one of the second source (245s, 335s) and drain (245d, 335d) regions respectively through the contact holes (285, 387), thereby electrically connecting the other of the first source (240s, 330s) and drain (240d, 330d) with the one of the second source (245s, 335s) and drain (245d, 335d) regions; a first electrode (291, 391) disposed directly on the planarization layer (280, 385), one of the end portions of the first electrode (291, 391) being in contact with the other of the second source (245s, 335s) and drain (245d, 335d) regions through the contact holes (285, 387).