A method of manufacturing a semiconductor device, comprising the steps of: forming a conductor layer patterned to a required shape on one face of a first semiconductor substrate, and a conductor layer patterned to a required shape on one face of a second semiconductor substrate; bonding a plurality of metal posts at predetermined positions on the conductor layer of the first semiconductor substrate; bonding the conductor layer of the second semiconductor substrate to the metal posts such that the conductor layer of the first semiconductor substrate and the conductor layer of the second semiconductor substrate face each other; filling a gap between the first semiconductor substrate and the second semiconductor substrate, which are bonded through the metal posts, with an insulating resin; polishing exposed side surfaces of the first semiconductor substrate and the second semiconductor substrate, to thereby thin each of the first and second semiconductor substrates (21a, 22a) to a prescribed thickness (t1, t2); forming via holes which expose the metal posts, by penetration processing the thinned first semiconductor substrate and the conductor layer of the first semiconductor substrate, and the thinned second semiconductor substrate and the conductor layer of the second semiconductor substrate, respectively; forming an insulating film on said side surfaces and on inner surfaces in said via holes of the first semiconductor substrate and the second semiconductor substrate; forming openings which expose the metal posts by removing at least a part from those portions of the insulating films which are in contact with the metal posts; forming conductors such that the conductors are buried in the via holes and fill the openings and via holes in the first and second semiconductor substrates (21, 22); forming electrode pads, patterned to a required shape and electrically connected to the conductors, directly on each insulating film of the first and second semiconductor substrates (21, 22) such that each one of the electrode pads is formed directly on the respective conductor; and stacking a structure (20a, 20b, 20c) obtained by the above-described steps, by a required number, by electrically connecting the electrode pads of respective structures with each other through metal bumps (30b, 30c). forming a conductor layer patterned to a required shape on one face of a first semiconductor substrate, and a conductor layer patterned to a required shape on one face of a second semiconductor substrate; bonding a plurality of metal posts at predetermined positions on the conductor layer of the first semiconductor substrate; bonding the conductor layer of the second semiconductor substrate to the metal posts such that the conductor layer of the first semiconductor substrate and the conductor layer of the second semiconductor substrate face each other; filling a gap between the first semiconductor substrate and the second semiconductor substrate, which are bonded through the metal posts, with an insulating resin; polishing exposed side surfaces of the first semiconductor substrate and the second semiconductor substrate, to thereby thin each of the first and second semiconductor substrates (21a, 22a) to a prescribed thickness (t1, t2); forming via holes which expose the metal posts, by penetration processing the thinned first semiconductor substrate and the conductor layer of the first semiconductor substrate, and the thinned second semiconductor substrate and the conductor layer of the second semiconductor substrate, respectively; forming an insulating film on said side surfaces and on inner surfaces in said via holes of the first semiconductor substrate and the second semiconductor substrate; forming openings which expose the metal posts by removing at least a part from those portions of the insulating films which are in contact with the metal posts; forming conductors such that the conductors are buried in the via holes and fill the openings and via holes in the first and second semiconductor substrates (21, 22); forming electrode pads, patterned to a required shape and electrically connected to the conductors, directly on each insulating film of the first and second semiconductor substrates (21, 22) such that each one of the electrode pads is formed directly on the respective conductor; and stacking a structure (20a, 20b, 20c) obtained by the above-described steps, by a required number, by electrically connecting the electrode pads of respective structures with each other through metal bumps (30b, 30c).