A LED lamp comprising: a light-emitting module; wherein the light-emitting module comprises: a mounting substrate including a substrate and a reflective film formed on a back surface of the substrate; and a semiconductor light-emitting element mounted on a front surface of the substrate, wherein the substrate transmits light from the semiconductor light-emitting element, characterized in that the reflective film is formed of a multilayer film (412, 512, 612, 712), the multilayer film (412, 512, 612, 712) includes a first film (413, 513) reflecting light, which is emitted from the semiconductor light-emitting element and is transmitted through the substrate towards the front surface of the substrate, and a second film (414, 514) formed on the first film (413, 513) on the opposite side to the substrate, the first film (413, 513) includes metal oxide microparticles reflecting the light from the semiconductor light-emitting element and a glass frit, the second film (414, 514) includes a glass frit, and the volume concentration of the glass frit in the second film (414, 514) is larger than a volume concentration of the glass frit in the first film (413, 513). a light-emitting module; wherein the light-emitting module comprises: a mounting substrate including a substrate and a reflective film formed on a back surface of the substrate; and a semiconductor light-emitting element mounted on a front surface of the substrate, wherein the substrate transmits light from the semiconductor light-emitting element, characterized in that the reflective film is formed of a multilayer film (412, 512, 612, 712), the multilayer film (412, 512, 612, 712) includes a first film (413, 513) reflecting light, which is emitted from the semiconductor light-emitting element and is transmitted through the substrate towards the front surface of the substrate, and a second film (414, 514) formed on the first film (413, 513) on the opposite side to the substrate, the first film (413, 513) includes metal oxide microparticles reflecting the light from the semiconductor light-emitting element and a glass frit, the second film (414, 514) includes a glass frit, and the volume concentration of the glass frit in the second film (414, 514) is larger than a volume concentration of the glass frit in the first film (413, 513). a mounting substrate including a substrate and a reflective film formed on a back surface of the substrate; and a semiconductor light-emitting element mounted on a front surface of the substrate, wherein the substrate transmits light from the semiconductor light-emitting element, characterized in that the reflective film is formed of a multilayer film (412, 512, 612, 712), the multilayer film (412, 512, 612, 712) includes a first film (413, 513) reflecting light, which is emitted from the semiconductor light-emitting element and is transmitted through the substrate towards the front surface of the substrate, and a second film (414, 514) formed on the first film (413, 513) on the opposite side to the substrate, the first film (413, 513) includes metal oxide microparticles reflecting the light from the semiconductor light-emitting element and a glass frit, the second film (414, 514) includes a glass frit, and the volume concentration of the glass frit in the second film (414, 514) is larger than a volume concentration of the glass frit in the first film (413, 513).