A method of making a wafer-level package for a plurality of MEMS devices, wherein a sealed and hermetic micro-cavity is formed over each MEMS device, comprising: preparing a MEMS wafer with a first bonding structure; preparing a lid wafer with a second bonding structure; and bonding said lid wafer to said MEMS wafer through said first and second bonding structures to create said wafer level package, and wherein said lid wafer and said MEMS wafer are substantially free of at least one component selected from the group consisting of alkali metals and chlorine; wherein said first bonding structure comprises a first seed layer on a MEMS device, a first structural underlayer over said first seed layer, and a first anti-oxidation layer over said first structural underlayer; wherein said second bonding structure comprises a second seed layer, a second structural underlayer over said second seed layer, a second anti-oxidation layer over said second structural underlayer, and a layer of lead-free solder capable of bonding to the first anti-oxidation layer; wherein the first and second structural underlayers are nickel deposited by an electroless plating process according to the equation: NiSO 4 + Ni(H 2 PO 2) 2 + 2H 2 O → Ni 0 + H 2 SO 4 + Ni(H 2 PO 3) 2 + H 2 ↑ or Ni(H 2 PO 2) 2 + Ni(H 2 PO 2) 2 + 2H 2 O → Ni 0 + 2H 3 PO 2 + Ni(H 2 PO 3) 2 + H 2 ↑ and wherein the first and second anti-oxidation layers comprise a noble metal selected from the group consisting of platinum, rhodium and ruthenium; and wherein the lead-free solder is deposited by electroless plating in an alkali-free, hydrazine-free, dimethylamine borane-free and chlorine-free electroless plating solution and is selected from the group consisting of: indium, gallium, tin, gallium-indium binary metal solder, a gallium-tin binary metal solder, gallium-bismuth binary metal solder, gallium-zinc binary metal solder, an indium-gallium binary metal solder, an indium-tin binary metal solder, an indium-bismuth binary metal solder, an indium-zinc binary metal solder, an indium-silver binary metal solder, a tin-gallium binary metal solder, a tin-indium binary metal solder, a tin-bismuth binary metal solder, a tin-zinc binary metal solder, a tin-magnesium binary metal solder, a tin-silver binary metal solder, and a tin-copper binary metal solder. preparing a MEMS wafer with a first bonding structure; preparing a lid wafer with a second bonding structure; and bonding said lid wafer to said MEMS wafer through said first and second bonding structures to create said wafer level package, and wherein said lid wafer and said MEMS wafer are substantially free of at least one component selected from the group consisting of alkali metals and chlorine; wherein said first bonding structure comprises a first seed layer on a MEMS device, a first structural underlayer over said first seed layer, and a first anti-oxidation layer over said first structural underlayer; wherein said second bonding structure comprises a second seed layer, a second structural underlayer over said second seed layer, a second anti-oxidation layer over said second structural underlayer, and a layer of lead-free solder capable of bonding to the first anti-oxidation layer; wherein the first and second structural underlayers are nickel deposited by an electroless plating process according to the equation: NiSO 4 + Ni(H 2 PO 2) 2 + 2H 2 O → Ni 0 + H 2 SO 4 + Ni(H 2 PO 3) 2 + H 2 ↑ or Ni(H 2 PO 2) 2 + Ni(H 2 PO 2) 2 + 2H 2 O → Ni 0 + 2H 3 PO 2 + Ni(H 2 PO 3) 2 + H 2 ↑ and wherein the first and second anti-oxidation layers comprise a noble metal selected from the group consisting of platinum, rhodium and ruthenium; and wherein the lead-free solder is deposited by electroless plating in an alkali-free, hydrazine-free, dimethylamine borane-free and chlorine-free electroless plating solution and is selected from the group consisting of: indium, gallium, tin, gallium-indium binary metal solder, a gallium-tin binary metal solder, gallium-bismuth binary metal solder, gallium-zinc binary metal solder, an indium-gallium binary metal solder, an indium-tin binary metal solder, an indium-bismuth binary metal solder, an indium-zinc binary metal solder, an indium-silver binary metal solder, a tin-gallium binary metal solder, a tin-indium binary metal solder, a tin-bismuth binary metal solder, a tin-zinc binary metal solder, a tin-magnesium binary metal solder, a tin-silver binary metal solder, and a tin-copper binary metal solder.