An apparatus, comprising: a plurality of memory cells (116; 316-1, 316-2; 616-1, 616-2, 616-3, 616-4, 616-5) coupled to a first access line (112; 312; 612) and to a plurality of second access lines (114; 314-1, 314-2; 614-1, 614-2, 614-3, 614-4, 614-5), wherein the plurality of memory cells are resistance variable memory cells; and a controller configured to: apply a first signal (434; 534) to the first access line; while the first signal is being applied to the first access line: apply a second signal (436-1; 536-1) to a first of the plurality of memory cells via one of the plurality of second access lines, wherein a voltage differential applied across the first of the plurality of memory cells as a result of the second signal is sufficient to switch the first of the plurality of memory cells from a non-conductive state to a conductive state; and apply, subsequent to the second signal and while the second signal is applied, a third signal (436-2; 536-2) to a second of the plurality of memory cells via another of the plurality of second access lines; and wherein a material implication operation is performed as a result of the application of the first signal, the second signal and the third signal, and wherein a result of the material implication operation is stored on the second of the plurality of memory cells subsequent to the application of the third signal. a plurality of memory cells (116; 316-1, 316-2; 616-1, 616-2, 616-3, 616-4, 616-5) coupled to a first access line (112; 312; 612) and to a plurality of second access lines (114; 314-1, 314-2; 614-1, 614-2, 614-3, 614-4, 614-5), wherein the plurality of memory cells are resistance variable memory cells; and a controller configured to: apply a first signal (434; 534) to the first access line; while the first signal is being applied to the first access line: apply a second signal (436-1; 536-1) to a first of the plurality of memory cells via one of the plurality of second access lines, wherein a voltage differential applied across the first of the plurality of memory cells as a result of the second signal is sufficient to switch the first of the plurality of memory cells from a non-conductive state to a conductive state; and apply, subsequent to the second signal and while the second signal is applied, a third signal (436-2; 536-2) to a second of the plurality of memory cells via another of the plurality of second access lines; and wherein a material implication operation is performed as a result of the application of the first signal, the second signal and the third signal, and wherein a result of the material implication operation is stored on the second of the plurality of memory cells subsequent to the application of the third signal. apply a first signal (434; 534) to the first access line; while the first signal is being applied to the first access line: apply a second signal (436-1; 536-1) to a first of the plurality of memory cells via one of the plurality of second access lines, wherein a voltage differential applied across the first of the plurality of memory cells as a result of the second signal is sufficient to switch the first of the plurality of memory cells from a non-conductive state to a conductive state; and apply, subsequent to the second signal and while the second signal is applied, a third signal (436-2; 536-2) to a second of the plurality of memory cells via another of the plurality of second access lines; and apply a second signal (436-1; 536-1) to a first of the plurality of memory cells via one of the plurality of second access lines, wherein a voltage differential applied across the first of the plurality of memory cells as a result of the second signal is sufficient to switch the first of the plurality of memory cells from a non-conductive state to a conductive state; and apply, subsequent to the second signal and while the second signal is applied, a third signal (436-2; 536-2) to a second of the plurality of memory cells via another of the plurality of second access lines; and wherein a material implication operation is performed as a result of the application of the first signal, the second signal and the third signal, and wherein a result of the material implication operation is stored on the second of the plurality of memory cells subsequent to the application of the third signal.