A magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction containing: a storage layer comprising a first ferromagnetic layer having a first storage magnetization; a second ferromagnetic layer having a second storage magnetization which magnitude can differ from the one of the a first storage magnetization; and a spacer layer arranged between the first and second ferromagnetic layers (231, 232) and magnetically coupling them, such that the first storage magnetization is oriented substantially anti-parallel with the second storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization (234, 235) at a low threshold temperature and freeing the storage magnetizations (234, 235) at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer; the magnetic tunnel junction further comprising a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that said storage magnetization (234, 235) can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold, characterized in that, the first storage magnetization is configured to have a larger magnitude than the magnitude of the second storage magnetization such that the first storage magnetization is switchable by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold; or the second storage magnetization is configured to have a larger magnitude than the first storage magnetization such that the second storage magnetization is switchable by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. a storage layer comprising a first ferromagnetic layer having a first storage magnetization; a second ferromagnetic layer having a second storage magnetization which magnitude can differ from the one of the a first storage magnetization; and a spacer layer arranged between the first and second ferromagnetic layers (231, 232) and magnetically coupling them, such that the first storage magnetization is oriented substantially anti-parallel with the second storage magnetization; a first ferromagnetic layer having a first storage magnetization; a second ferromagnetic layer having a second storage magnetization which magnitude can differ from the one of the a first storage magnetization; and a spacer layer arranged between the first and second ferromagnetic layers (231, 232) and magnetically coupling them, such that the first storage magnetization is oriented substantially anti-parallel with the second storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization (234, 235) at a low threshold temperature and freeing the storage magnetizations (234, 235) at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer; the magnetic tunnel junction further comprising a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that said storage magnetization (234, 235) can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold, characterized in that, the first storage magnetization is configured to have a larger magnitude than the magnitude of the second storage magnetization such that the first storage magnetization is switchable by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold; or the second storage magnetization is configured to have a larger magnitude than the first storage magnetization such that the second storage magnetization is switchable by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold.