Current-assisted photonic demodulator adapted to detect a light radiation of interest, comprising: ∘ a detection portion, having a first face and a second face opposite one another and parallel with a main plane, and comprising a central zone (Zc) for detecting the incident light radiation, • made of a first crystalline semiconductor material based on germanium, • comprising doped regions, of which: - at least two p-doped modulation regions, intended to generate and modulate a drift current in the detection portion; - at least one n-doped collection region, intended to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest; ∘ a dielectric passivation layer, produced based on an electrically insulating material, and covering the first face; ∘ electrodes (M1, M2, C1, C2), located at the first face and passing through the dielectric passivation layer, of which modulation electrodes (M1, M2) in electrical contact with the doped modulation regions; and at least one collection electrode (C1, C2) in electrical contact with at least the doped collection region; ∘ characterised in that it includes a peripheral lateral portion, surrounding the detection portion in the main plane, • produced based on a second material having a coefficient of thermal expansion less than that of the first material, the detection portion then having tensile mechanical stress in the main plane and compressive mechanical stress along a vertical axis orthogonal to the main plane; ∘ and in that, said doped regions are disposed according to a vertical arrangement such that: • at least one region doped according to a first type of conductivity, referred to as upper doped region, is flush with the first face and is located in the vicinity of the central zone (Zc); • at least two regions doped according to a second type of conductivity opposite the first type, referred to as lower doped regions, are located at a distance along the vertical axis from the upper doped region. ∘ a detection portion, having a first face and a second face opposite one another and parallel with a main plane, and comprising a central zone (Zc) for detecting the incident light radiation, • made of a first crystalline semiconductor material based on germanium, • comprising doped regions, of which: - at least two p-doped modulation regions, intended to generate and modulate a drift current in the detection portion; - at least one n-doped collection region, intended to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest; • made of a first crystalline semiconductor material based on germanium, • comprising doped regions, of which: - at least two p-doped modulation regions, intended to generate and modulate a drift current in the detection portion; - at least one n-doped collection region, intended to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest; - at least two p-doped modulation regions, intended to generate and modulate a drift current in the detection portion; - at least one n-doped collection region, intended to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest; ∘ a dielectric passivation layer, produced based on an electrically insulating material, and covering the first face; ∘ electrodes (M1, M2, C1, C2), located at the first face and passing through the dielectric passivation layer, of which modulation electrodes (M1, M2) in electrical contact with the doped modulation regions; and at least one collection electrode (C1, C2) in electrical contact with at least the doped collection region; ∘ characterised in that it includes a peripheral lateral portion, surrounding the detection portion in the main plane, • produced based on a second material having a coefficient of thermal expansion less than that of the first material, the detection portion then having tensile mechanical stress in the main plane and compressive mechanical stress along a vertical axis orthogonal to the main plane; • produced based on a second material having a coefficient of thermal expansion less than that of the first material, the detection portion then having tensile mechanical stress in the main plane and compressive mechanical stress along a vertical axis orthogonal to the main plane; ∘ and in that, said doped regions are disposed according to a vertical arrangement such that: • at least one region doped according to a first type of conductivity, referred to as upper doped region, is flush with the first face and is located in the vicinity of the central zone (Zc); • at least two regions doped according to a second type of conductivity opposite the first type, referred to as lower doped regions, are located at a distance along the vertical axis from the upper doped region. • at least one region doped according to a first type of conductivity, referred to as upper doped region, is flush with the first face and is located in the vicinity of the central zone (Zc); • at least two regions doped according to a second type of conductivity opposite the first type, referred to as lower doped regions, are located at a distance along the vertical axis from the upper doped region.