A method of forming a film on a substrate using a catalytic CVD equipment, the catalytic CVD equipment comprising: a reaction chamber; a catalytic wire installed in the reaction chamber; a power source for supplying power to the catalytic wire to heat the catalytic wire; and a control unit for controlling a temperature of the catalytic wire by controlling power-supply from the power source to the catalytic wire, wherein the method comprises: supplying a raw material gas to the catalytic wire in the reaction chamber; with the control unit, performing a film formation control by controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a decomposition temperature of the raw material gas, at a time at which formation of the film is to be performed onto the substrate in the reaction chamber by depositing generated decomposed species on the substrate, and with the control unit, continuously before and after the film formation control, performing a no film formation control for controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a standby temperature which is lower than the decomposition temperature of the raw material gas and higher than a ductile-brittle transition temperature of the catalytic wire, characterized in that: the catalytic wire comprises tantalum having a tantalum borate layer on a surface thereof; and the no film formation control is performed using 500 degrees Centigrade as the ductile-brittle temperature. a reaction chamber; a catalytic wire installed in the reaction chamber; a power source for supplying power to the catalytic wire to heat the catalytic wire; and a control unit for controlling a temperature of the catalytic wire by controlling power-supply from the power source to the catalytic wire, wherein the method comprises: supplying a raw material gas to the catalytic wire in the reaction chamber; with the control unit, performing a film formation control by controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a decomposition temperature of the raw material gas, at a time at which formation of the film is to be performed onto the substrate in the reaction chamber by depositing generated decomposed species on the substrate, and with the control unit, continuously before and after the film formation control, performing a no film formation control for controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a standby temperature which is lower than the decomposition temperature of the raw material gas and higher than a ductile-brittle transition temperature of the catalytic wire, characterized in that: the catalytic wire comprises tantalum having a tantalum borate layer on a surface thereof; and the no film formation control is performed using 500 degrees Centigrade as the ductile-brittle temperature. supplying a raw material gas to the catalytic wire in the reaction chamber; with the control unit, performing a film formation control by controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a decomposition temperature of the raw material gas, at a time at which formation of the film is to be performed onto the substrate in the reaction chamber by depositing generated decomposed species on the substrate, and with the control unit, continuously before and after the film formation control, performing a no film formation control for controlling the power-supply from the power source to the catalytic wire so that the temperature of the catalytic wire is maintained at a standby temperature which is lower than the decomposition temperature of the raw material gas and higher than a ductile-brittle transition temperature of the catalytic wire, characterized in that: the catalytic wire comprises tantalum having a tantalum borate layer on a surface thereof; and the no film formation control is performed using 500 degrees Centigrade as the ductile-brittle temperature. the catalytic wire comprises tantalum having a tantalum borate layer on a surface thereof; and the no film formation control is performed using 500 degrees Centigrade as the ductile-brittle temperature.