Optoelectronic device, comprising: ∘ a carrier substrate, comprising: • a first dielectric layer, which is made of an electrically insulating material, and which forms a top side of the carrier substrate lying in a main plane; and ∘ a laser source, comprising: • a semiconductor membrane, which rests on the first dielectric layer, and which is formed from a lateral segment (21.1) doped n-type, a lateral segment (21.2) doped p-type, and an optically active central segment located between and in contact with the doped lateral segments (21.1, 21.2) to form a lateral p-i-n junction lying parallel to the main plane; • a second dielectric layer, which is made of an electrically insulating material, and which covers the semiconductor membrane; and • electrodes, which rest on the doped lateral segments (21.1, 21.2), and which thus ensure lateral injection of charge carriers into the central segment, where the semiconductor membrane is produced based on crystalline GaAs, and the central segment comprises GaAs-based quantum dots, characterized in that the doped lateral segments (21.1, 21.2) are produced based on Al x Ga 1-x As with a proportion of aluminium x comprised between 0.05 and 0.30. ∘ a carrier substrate, comprising: • a first dielectric layer, which is made of an electrically insulating material, and which forms a top side of the carrier substrate lying in a main plane; and • a first dielectric layer, which is made of an electrically insulating material, and which forms a top side of the carrier substrate lying in a main plane; and ∘ a laser source, comprising: • a semiconductor membrane, which rests on the first dielectric layer, and which is formed from a lateral segment (21.1) doped n-type, a lateral segment (21.2) doped p-type, and an optically active central segment located between and in contact with the doped lateral segments (21.1, 21.2) to form a lateral p-i-n junction lying parallel to the main plane; • a second dielectric layer, which is made of an electrically insulating material, and which covers the semiconductor membrane; and • electrodes, which rest on the doped lateral segments (21.1, 21.2), and which thus ensure lateral injection of charge carriers into the central segment, where the semiconductor membrane is produced based on crystalline GaAs, and the central segment comprises GaAs-based quantum dots, characterized in that the doped lateral segments (21.1, 21.2) are produced based on Al x Ga 1-x As with a proportion of aluminium x comprised between 0.05 and 0.30. • a semiconductor membrane, which rests on the first dielectric layer, and which is formed from a lateral segment (21.1) doped n-type, a lateral segment (21.2) doped p-type, and an optically active central segment located between and in contact with the doped lateral segments (21.1, 21.2) to form a lateral p-i-n junction lying parallel to the main plane; • a second dielectric layer, which is made of an electrically insulating material, and which covers the semiconductor membrane; and • electrodes, which rest on the doped lateral segments (21.1, 21.2), and which thus ensure lateral injection of charge carriers into the central segment, the semiconductor membrane is produced based on crystalline GaAs, and the central segment comprises GaAs-based quantum dots, characterized in that the doped lateral segments (21.1, 21.2) are produced based on Al x Ga 1-x As with a proportion of aluminium x comprised between 0.05 and 0.30.