A light-emitting device comprising: a light-emitting structure comprising a first conductivity type semiconductor layer including at least a first region and a second region, and an active layer and a second conductivity type semiconductor layer formed in the first region; a first electrode formed on the first conductivity type semiconductor layer; and a light-transmitting electrode layer formed on the second conductivity type semiconductor layer; a second electrode formed on the light-transmitting electrode layer, wherein the second region comprises: a third region (s2_2) formed on at least one side of the light-emitting structure in a horizontal direction of the light-emitting structure; and a fourth region (s2_1) formed inside the light-emitting structure in a horizontal direction of the light-emitting structure, wherein the first electrode comprises: a first pad on one side of the first conductivity type semiconductor layer in a longitudinal direction of the first conductivity type semiconductor layer; and a first branch which is formed in the fourth region (s2_1), is connected to the first pad and extends in the longitudinal direction of the first conductivity type semiconductor layer, wherein the second electrode comprises: a second pad on the other side of the second conductivity type semiconductor layer in a longitudinal direction of the second conductivity type semiconductor layer; and a third branch and a fourth branch which are connected to the second pad and extend towards the first pad, wherein the first branch is spaced from a first mesa line, separating the fourth region (s2_1) from the first region, by a first distance, wherein each of the third and fourth branches (174, 176) is spaced from a second mesa line, separating the third region from the first region, by a second distance, wherein the each of third and fourth branches (174, 176) is spaced from the first mesa line by a third distance characterised by an insertion layer formed in the light-transmitting electrode layer, wherein the insertion layer is formed between the second conductivity type semiconductor layer and at least one of the third and fourth branches (174, 176), and wherein the insertion layer vertically overlaps at least one of the third and fourth branches (174, 176) by partially removing the light-transmitting electrode layer; and further characterised by the second distance being greater than the first distance and the third distance being greater than the second distance. a light-emitting structure comprising a first conductivity type semiconductor layer including at least a first region and a second region, and an active layer and a second conductivity type semiconductor layer formed in the first region; a first electrode formed on the first conductivity type semiconductor layer; and a light-transmitting electrode layer formed on the second conductivity type semiconductor layer; a second electrode formed on the light-transmitting electrode layer, a third region (s2_2) formed on at least one side of the light-emitting structure in a horizontal direction of the light-emitting structure; and a fourth region (s2_1) formed inside the light-emitting structure in a horizontal direction of the light-emitting structure, a first pad on one side of the first conductivity type semiconductor layer in a longitudinal direction of the first conductivity type semiconductor layer; and a first branch which is formed in the fourth region (s2_1), is connected to the first pad and extends in the longitudinal direction of the first conductivity type semiconductor layer, a second pad on the other side of the second conductivity type semiconductor layer in a longitudinal direction of the second conductivity type semiconductor layer; and a third branch and a fourth branch which are connected to the second pad and extend towards the first pad,