A back contact photovoltaic cell, comprising: an n-type silicon substrate; an emitter region arranged at first predetermined locations at a rear side of the n-type silicon substrate; a back surface field region arranged at second predetermined locations at the rear side of the n-type silicon substrate, the second predetermined locations being different from and non-overlapping with the first predetermined locations, wherein the emitter region and the back surface field region are field induced regions; a first layer stack configured to induce an inversion region in the n-type silicon substrate at the first predetermined locations, the inversion region forming the emitter region; and a second layer stack configured to induce an accumulation region in the n-type silicon substrate at the second predetermined locations, the accumulation region forming the back surface field region; wherein: each of the first layer stack and the second layer stack comprises a passivating tunneling layer structure arranged on the n-type silicon substrate; the first layer stack further comprises a first transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a high work function for inducing the emitter region; and the second layer stack further comprises a second transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a low work function for inducing the back surface field region. an n-type silicon substrate; an emitter region arranged at first predetermined locations at a rear side of the n-type silicon substrate; a back surface field region arranged at second predetermined locations at the rear side of the n-type silicon substrate, the second predetermined locations being different from and non-overlapping with the first predetermined locations, wherein the emitter region and the back surface field region are field induced regions; a first layer stack configured to induce an inversion region in the n-type silicon substrate at the first predetermined locations, the inversion region forming the emitter region; and a second layer stack configured to induce an accumulation region in the n-type silicon substrate at the second predetermined locations, the accumulation region forming the back surface field region; wherein: each of the first layer stack and the second layer stack comprises a passivating tunneling layer structure arranged on the n-type silicon substrate; the first layer stack further comprises a first transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a high work function for inducing the emitter region; and the second layer stack further comprises a second transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a low work function for inducing the back surface field region. each of the first layer stack and the second layer stack comprises a passivating tunneling layer structure arranged on the n-type silicon substrate; the first layer stack further comprises a first transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a high work function for inducing the emitter region; and the second layer stack further comprises a second transparent conductive layer arranged on the passivating tunneling layer structure and comprising a material with a low work function for inducing the back surface field region.