A surface-coated cutting tool comprising a base material and a coating film provided on a surface of the base material, wherein the coating film includes a first alternating layer provided on the base material and a second alternating layer provided on the first alternating layer, the first alternating layer includes A and B layers, the second alternating layer includes C and D layers, one or a plurality of the A layers and one or a plurality of the B layers are layered alternately, one or a plurality of the C layers and one or a plurality of the D layers are layered alternately, each of the one or plurality of the A layers is composed of a nitride or carbonitride of Al a Cr b M1 (1-a-b), and respective atomic ratios of metal atoms in the A layer satisfy 0.5≤a≤0.9, 0.2≤b≤0.4, and 0≤(1-a-b)≤0.1, each of the one or plurality of the B layers is composed of a nitride or carbonitride of Al c Ti d M2 (1-c-d), and respective atomic ratios of metal atoms in the B layer satisfy 0.3≤c≤0.7, 0.3≤d≤0.7, and 0≤(1-c-d)≤0.1, each of the one or plurality of the C layers is composed of a nitride or carbonitride of Ti e Si f M3 (1-e-f), and respective atomic ratios of metal atoms in the C layer satisfy 0.75≤e≤0.99, 0.01≤f≤0.2, and 0≤(1-e-f)≤0.1, each of the one or plurality of the D layers is composed of a nitride or carbonitride of Ti g Si h M4 (1-g-h), and respective atomic ratios of metal atoms in the D layer satisfy 0.8≤g≤0.99, 0.01≤h≤0.2, and 0≤(1-g-h)≤0.1, the atomic ratio e of Ti in the C layer and the atomic ratio g of Ti in the D layer satisfy 0.05≤|g-e|≤0.2, the atomic ratio f of Si in the C layer and the atomic ratio h of Si in the D layer satisfy 0.05≤|h-f|≤0.2, each of the M1 and the M2 is independently one or more elements selected from a group consisting of Si and B, and each of the M3 and the M4 is independently one or more elements selected from a group consisting of Ta and B; wherein: the A layer in the first alternating layer has a thickness λa of more than or equal to 0.005 μm and less than or equal to 2 μm, the B layer in the first alternating layer has a thickness λb of more than or equal to 0.002 μm and less than or equal to 2 μm, the C layer in the second alternating layer has a thickness λc of more than or equal to 0.005 μm and less than or equal to 2 μm, the D layer in the second alternating layer has a thickness λd of more than or equal to 0.001 μm and less than or equal to 2 μm, and the coating film has an entire thickness of more than or equal to 0.5 μm and less than or equal to 15 μm. the coating film includes a first alternating layer provided on the base material and a second alternating layer provided on the first alternating layer, the first alternating layer includes A and B layers, the second alternating layer includes C and D layers, one or a plurality of the A layers and one or a plurality of the B layers are layered alternately, one or a plurality of the C layers and one or a plurality of the D layers are layered alternately, each of the one or plurality of the A layers is composed of a nitride or carbonitride of Al a Cr b M1 (1-a-b), and respective atomic ratios of metal atoms in the A layer satisfy 0.5≤a≤0.9, 0.2≤b≤0.4, and 0≤(1-a-b)≤0.1, each of the one or plurality of the B layers is composed of a nitride or carbonitride of Al c Ti d M2 (1-c-d), and respective atomic ratios of metal atoms in the B layer satisfy 0.3≤c≤0.7, 0.3≤d≤0.7, and 0≤(1-c-d)≤0.1, each of the one or plurality of the C layers is composed of a nitride or carbonitride of Ti e Si f M3 (1-e-f), and respective atomic ratios of metal atoms in the C layer satisfy 0.75≤e≤0.99, 0.01≤f≤0.2, and 0≤(1-e-f)≤0.1, each of the one or plurality of the D layers is composed of a nitride or carbonitride of Ti g Si h M4 (1-g-h), and respective atomic ratios of metal atoms in the D layer satisfy 0.8≤g≤0.99, 0.01≤h≤0.2, and 0≤(1-g-h)≤0.1, the atomic ratio e of Ti in the C layer and the atomic ratio g of Ti in the D layer satisfy 0.05≤|g-e|≤0.2, the atomic ratio f of Si in the C layer and the atomic ratio h of Si in the D layer satisfy 0.05≤|h-f|≤0.2, each of the M1 and the M2 is independently one or more elements selected from a group consisting of Si and B, and each of the M3 and the M4 is independently one or more elements selected from a group consisting of Ta and B; wherein: the A layer in the first alternating layer has a thickness λa of more than or equal to 0.005 μm and less than or equal to 2 μm, the B layer in the first alternating layer has a thickness λb of more than or equal to 0.002 μm and less than or equal to 2 μm, the C layer in the second alternating layer has a thickness λc of more than or equal to 0.005 μm and less than or equal to 2 μm, the D layer in the second alternating layer has a thickness λd of more than or equal to 0.001 μm and less than or equal to 2 μm, and the coating film has an entire thickness of more than or equal to 0.5 μm and less than or equal to 15 μm. the A layer in the first alternating layer has a thickness λa of more than or equal to 0.005 μm and less than or equal to 2 μm, the B layer in the first alternating layer has a thickness λb of more than or equal to 0.002 μm and less than or equal to 2 μm, the C layer in the second alternating layer has a thickness λc of more than or equal to 0.005 μm and less than or equal to 2 μm, the D layer in the second alternating layer has a thickness λd of more than or equal to 0.001 μm and less than or equal to 2 μm, and the coating film has an entire thickness of more than or equal to 0.5 μm and less than or equal to 15 μm.