A light emitting diode comprising: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer and an active layer between the first and second conductivity type semiconductor layers; a transparent substrate on the light emitting structure; a support member under the light emitting structure; a reflective electrode layer between the second conductivity type semiconductor layer and the support member; an insulating layer disposed between the support member and the reflective electrode layer; and first to third connection electrodes (141,143,145,142,144,146) spaced apart from each other in a first direction in the support member, wherein the second connection electrode (142,143) is disposed between the first and third connection electrodes, wherein the first and third connection electrodes are electrically connected with each other and are electrically insulated from the second electrode, and the support member is disposed at a peripheral portion of the first to third connection electrodes (141,143,145,142,144,146), wherein at least one of the first to third connection electrodes (141,143,145,142,144,146) includes a plurality of connection electrodes spaced apart from each other in a second direction, wherein bottom surfaces of the first to third connection electrodes are exposed to a bottom surface of the support member, wherein the bottom surface of the support member is aligned on a same plane with the bottom surfaces of the first to third connection electrodes (141,143,145,142,144,146), wherein the support member includes a resin material to which a ceramic material is added, and a lateral side of the support member is aligned on a same plane with a lateral side of the light emitting structure, wherein the support member has a thickness thicker than a thickness of the transparent substrate, wherein the top surface of the support member is located lower than a top surface of the light emitting structure, wherein the bottom surface of the support member has a width equal to a width of a top surface of the transparent substrate and to a width of a top surface of the first conductivity type semiconductor layer in a horizontal direction. a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer and an active layer between the first and second conductivity type semiconductor layers; a transparent substrate on the light emitting structure; a support member under the light emitting structure; a reflective electrode layer between the second conductivity type semiconductor layer and the support member; an insulating layer disposed between the support member and the reflective electrode layer; and first to third connection electrodes (141,143,145,142,144,146) spaced apart from each other in a first direction in the support member, wherein the second connection electrode (142,143) is disposed between the first and third connection electrodes, wherein the first and third connection electrodes are electrically connected with each other and are electrically insulated from the second electrode, and the support member is disposed at a peripheral portion of the first to third connection electrodes (141,143,145,142,144,146), wherein at least one of the first to third connection electrodes (141,143,145,142,144,146) includes a plurality of connection electrodes spaced apart from each other in a second direction, wherein bottom surfaces of the first to third connection electrodes are exposed to a bottom surface of the support member, wherein the bottom surface of the support member is aligned on a same plane with the bottom surfaces of the first to third connection electrodes (141,143,145,142,144,146), wherein the support member includes a resin material to which a ceramic material is added, and a lateral side of the support member is aligned on a same plane with a lateral side of the light emitting structure, wherein the support member has a thickness thicker than a thickness of the transparent substrate, wherein the top surface of the support member is located lower than a top surface of the light emitting structure, wherein the bottom surface of the support member has a width equal to a width of a top surface of the transparent substrate and to a width of a top surface of the first conductivity type semiconductor layer in a horizontal direction.