A light emission device (1, 24, 28, 32) comprising: a substrate; and a layer arrangement applied onto the substrate, comprising a first electrode layer made of a conductive material, arranged on the substrate, a second electrode layer made of a conductive material, at least one light-emitting layer made of an organic material, arranged between the first electrode layer and the second electrode layer and formed as an organic layer stack, and at least one intermediate layer comprising an optical lattice structure, arranged between the organic layer stack and the first electrode layer, wherein a first main surface of the intermediate layer faces the organic layer stack and the first main surface of the intermediate layer is formed to be planar within a manufacturing-induced tolerance range at least in the region of the optical lattice structure, wherein, in the light-emitting region of the intermediate layer, the tolerance range in the region of unevenness of the first main surface is in a range of less than +/- 20 nm and preferably +/- 10 nm; and wherein the intermediate layer is conductive at least in regions between the first main surface and a second main surface thereof, wherein the intermediate layer includes first and second lattice sub-regions (18a, 18b), the first and second lattice sub-regions (18a, 18b) being arranged next to each other, and the first and second lattice sub-regions (18a, 18b) comprising an equal layer thickness so as to form a constant layer thickness (h 18) of the intermediate layer, and wherein the first lattice sub-region comprises doped amorphous silicon and the second lattice sub-region comprises silicon oxide; wherein the organic layer stack comprises a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer and an electron transport layer; and wherein the first main surface of the intermediate layer and the organic layer stack are directly adjacent to each other. a substrate; and a layer arrangement applied onto the substrate, comprising a first electrode layer made of a conductive material, arranged on the substrate, a second electrode layer made of a conductive material, at least one light-emitting layer made of an organic material, arranged between the first electrode layer and the second electrode layer and formed as an organic layer stack, and at least one intermediate layer comprising an optical lattice structure, arranged between the organic layer stack and the first electrode layer, wherein a first main surface of the intermediate layer faces the organic layer stack and the first main surface of the intermediate layer is formed to be planar within a manufacturing-induced tolerance range at least in the region of the optical lattice structure, wherein, in the light-emitting region of the intermediate layer, the tolerance range in the region of unevenness of the first main surface is in a range of less than +/- 20 nm and preferably +/- 10 nm; and wherein the intermediate layer is conductive at least in regions between the first main surface and a second main surface thereof, wherein the intermediate layer includes first and second lattice sub-regions (18a, 18b), the first and second lattice sub-regions (18a, 18b) being arranged next to each other, and the first and second lattice sub-regions (18a, 18b) comprising an equal layer thickness so as to form a constant layer thickness (h 18) of the intermediate layer, and wherein the first lattice sub-region comprises doped amorphous silicon and the second lattice sub-region comprises silicon oxide; wherein the organic layer stack comprises a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer and an electron transport layer; and wherein the first main surface of the intermediate layer and the organic layer stack are directly adjacent to each other.