A method for defect detection in a singulated semiconductor device, the method comprising: Illuminating, using at least one light source, a first side face (3 2) of the singulated semiconductor device with an illumination light, wherein the illumination light is directed to the first side face (3 2) of the singulated semiconductor device such that the illumination light travels through the singulated semiconductor device and exits the singulated semiconductor device at a second side face (3 4) of the singulated semiconductor device which is opposite the first side face (3 2), wherein the light exits from the second side face (3 4) of the singulated semiconductor device as a diffuse ray of light, wherein the illumination light is directed to the first side face (3 2) of the semiconductor device along an axis which is perpendicular to the first side face (3 2); imaging the light which exits from second side face (3 4) of the singulated semiconductor device on a detector of a camera with a lens, wherein the camera looks with its lens directly at the second side face (3 4) of the singulated semiconductor device; wherein each of the side faces (3 1, 3 2, 3 3, 3 4) of the singulated semiconductor device are diced edges; and wherein when reaching an interior defect or a side crack of the singulated semiconductor device a part of the diffuse ray is blocked by the interior defect or the side crack leading to a defective part in the camera image; carrying out a relative movement of a stage, which holds the singulated semiconductor device and the camera, such that the second side face (3 2) of the singulated semiconductor device is imaged completely by the camera; and wherein the step of carrying out a relative movement of the stage further comprises: rotating the stage and in parallel carrying out a movement of the stage in the X/Y -plane, such that a focus point of the camera is kept during the rotational movement of the stage on a respective side face. Illuminating, using at least one light source, a first side face (3 2) of the singulated semiconductor device with an illumination light, wherein the illumination light is directed to the first side face (3 2) of the singulated semiconductor device such that the illumination light travels through the singulated semiconductor device and exits the singulated semiconductor device at a second side face (3 4) of the singulated semiconductor device which is opposite the first side face (3 2), wherein the light exits from the second side face (3 4) of the singulated semiconductor device as a diffuse ray of light, wherein the illumination light is directed to the first side face (3 2) of the semiconductor device along an axis which is perpendicular to the first side face (3 2); imaging the light which exits from second side face (3 4) of the singulated semiconductor device on a detector of a camera with a lens, wherein the camera looks with its lens directly at the second side face (3 4) of the singulated semiconductor device; wherein each of the side faces (3 1, 3 2, 3 3, 3 4) of the singulated semiconductor device are diced edges; and wherein when reaching an interior defect or a side crack of the singulated semiconductor device a part of the diffuse ray is blocked by the interior defect or the side crack leading to a defective part in the camera image; carrying out a relative movement of a stage, which holds the singulated semiconductor device and the camera, such that the second side face (3 2) of the singulated semiconductor device is imaged completely by the camera; and wherein the step of carrying out a relative movement of the stage further comprises: rotating the stage and in parallel carrying out a movement of the stage in the X/Y -plane, such that a focus point of the camera is kept during the rotational movement of the stage on a respective side face.