mhurhangee/ep-ind-claims huggingface dataset:
A managed access system for mobile wireless devices, MWDs, in a facility, the facility being geographically within a wireless communications network of a communications carrier, the managed access system comprising: a) at least one RF antenna arranged at the facility and comprising an RF launch structure, and an elongate electrical conductor having a proximal end extending through the RF launch structure, and a distal end spaced apart from the RF launch structure to define an elongate RF coverage pattern; b) radio equipment coupled to the at least one RF antenna; c) a management access controller cooperating with the radio equipment to communicate with a given MWD in the elongate RF coverage pattern within the facility, block outside communications via the wireless communications network when the given MWD is an unauthorized MWD, and provide outside communications via the wireless communications network when the given MWD is an authorized MWD; and d) a time domain reflectometer, TDR, coupled to the elongate electrical conductor and configured to determine a distance to an object adjacent the elongate electrical conductor along a length thereof. a) at least one RF antenna arranged at the facility and comprising an RF launch structure, and an elongate electrical conductor having a proximal end extending through the RF launch structure, and a distal end spaced apart from the RF launch structure to define an elongate RF coverage pattern; b) radio equipment coupled to the at least one RF antenna; c) a management access controller cooperating with the radio equipment to communicate with a given MWD in the elongate RF coverage pattern within the facility, block outside communications via the wireless communications network when the given MWD is an unauthorized MWD, and provide outside communications via the wireless communications network when the given MWD is an authorized MWD; and d) a time domain reflectometer, TDR, coupled to the elongate electrical conductor and configured to determine a distance to an object adjacent the elongate electrical conductor along a length thereof.
Epoxy resin composition comprising: A) at least one epoxy compound and B) a hardener composition consisting of: B1) 65%-99% of at least one polyamine based on triacetonediamine and B2) 1%-35% of at least one compound having at least one functional group reactive toward epoxy groups in component A) selected from isophoronediamine, 4,4'-diaminodicyclohexylmethane, 2,4'-diaminodicyclohexylmethane, 2,2'-diaminodicyclohexylmethane, alone or in mixtures of the isomers, a mixture of the isomers of 2,2,4-trimethylhexamethylenediamine and 2,4,4-trimethylhexamethylenediamine, adduct hardeners based on the reaction products of epoxy compounds and di- and/or polyamines B2) or a combination of the aforementioned di- and/or polyamines B2), where the stoichiometric ratio of the epoxy groups of A) and the number of active hydrogen atoms of the functional groups of B) varies from 1:2 to 2:1, C) 0.1%-10% by weight of at least one curing accelerator, where the amounts of A)-C) add up to 100% by weight, D) optionally additives. A) at least one epoxy compound and B) a hardener composition consisting of: B1) 65%-99% of at least one polyamine based on triacetonediamine and B2) 1%-35% of at least one compound having at least one functional group reactive toward epoxy groups in component A) selected from isophoronediamine, 4,4'-diaminodicyclohexylmethane, 2,4'-diaminodicyclohexylmethane, 2,2'-diaminodicyclohexylmethane, alone or in mixtures of the isomers, a mixture of the isomers of 2,2,4-trimethylhexamethylenediamine and 2,4,4-trimethylhexamethylenediamine, adduct hardeners based on the reaction products of epoxy compounds and di- and/or polyamines B2) or a combination of the aforementioned di- and/or polyamines B2), where the stoichiometric ratio of the epoxy groups of A) and the number of active hydrogen atoms of the functional groups of B) varies from 1:2 to 2:1, B1) 65%-99% of at least one polyamine based on triacetonediamine and B2) 1%-35% of at least one compound having at least one functional group reactive toward epoxy groups in component A) selected from isophoronediamine, 4,4'-diaminodicyclohexylmethane, 2,4'-diaminodicyclohexylmethane, 2,2'-diaminodicyclohexylmethane, alone or in mixtures of the isomers, a mixture of the isomers of 2,2,4-trimethylhexamethylenediamine and 2,4,4-trimethylhexamethylenediamine, adduct hardeners based on the reaction products of epoxy compounds and di- and/or polyamines B2) or a combination of the aforementioned di- and/or polyamines B2), C) 0.1%-10% by weight of at least one curing accelerator, where the amounts of A)-C) add up to 100% by weight, D) optionally additives.
A method of fabricating a multilayer semiconductor structure, comprising: forming a gate electrode layer; forming a gate dielectric layer on the gate electrode layer, the gate dielectric layer comprising an Al 2 O 3 or an SiO 2 layer deposited on an Al 2 O 3 layer; after forming the gate dielectric layer, exposing the gate dielectric layer to a hydrogen-containing plasma; and after exposing the gate dielectric layer to the hydrogen-containing plasma, forming a metal oxide semiconductor layer comprising ZnO on the gate dielectric layer to form a ZnO/Al 2 O 3 or a ZnO/SiO 2 /Al 2 O 3 semiconductor-dieletric interface; wherein a hydrogenated region is formed at the semiconductor-dielectric interface of the gate dielectric layer and the metal oxide semiconductor layer, the hydrogenated region having a non-uniform hydrogen profile, wherein a concentration of hydrogen decreases from the semiconductor-dielectric interface into both of the gate dielectric layer and the metal oxide semiconductor layer, and wherein the multilayer semiconductor structure is a thin film transistor. forming a gate electrode layer; forming a gate dielectric layer on the gate electrode layer, the gate dielectric layer comprising an Al 2 O 3 or an SiO 2 layer deposited on an Al 2 O 3 layer; after forming the gate dielectric layer, exposing the gate dielectric layer to a hydrogen-containing plasma; and after exposing the gate dielectric layer to the hydrogen-containing plasma, forming a metal oxide semiconductor layer comprising ZnO on the gate dielectric layer to form a ZnO/Al 2 O 3 or a ZnO/SiO 2 /Al 2 O 3 semiconductor-dieletric interface; wherein a hydrogenated region is formed at the semiconductor-dielectric interface of the gate dielectric layer and the metal oxide semiconductor layer, the hydrogenated region having a non-uniform hydrogen profile, wherein a concentration of hydrogen decreases from the semiconductor-dielectric interface into both of the gate dielectric layer and the metal oxide semiconductor layer, and wherein the multilayer semiconductor structure is a thin film transistor.
Device for cleaning, in particular for dry ice cleaning, having a blasting device (2a; 2b; 2c), comprising a first feed (3a; 3b) for propellant gas, at least one further feed (4a; 4b) for a blasting material, in particular dry ice pellets, which is connected to a suction line (6a; 6b; 6c; 6d), a mixing chamber (7a; 7b) in which the blasting material can be mixed with the propellant gas, and an acceleration section (8a; 8b) for accelerating the blasting material with the propellant gas, wherein during operation at least one feed gas flow upstream of the acceleration section (8a; 8b) is adjustable independently of the first propellant gas flow, characterized in that the device comprises a storage container for blasting material, in which at least one suction connection piece and at least one corresponding stop surface are arranged, which are mounted movably with respect to one another, and a gas feed (31, 32) for an adjustable gas flow is provided in the suction connection piece and/or in the stop surface, wherein the suction connection piece and/or the stop surface have adjustable openings and/or at least one bypass is provided for guiding an adjustable proportion of propellant gas from the first feed for propellant gas into the suction connection piece and/or into the stop surface. wherein during operation at least one feed gas flow upstream of the acceleration section (8a; 8b) is adjustable independently of the first propellant gas flow, characterized in that the device comprises a storage container for blasting material, in which at least one suction connection piece and at least one corresponding stop surface are arranged, which are mounted movably with respect to one another, and a gas feed (31, 32) for an adjustable gas flow is provided in the suction connection piece and/or in the stop surface, wherein the suction connection piece and/or the stop surface have adjustable openings and/or at least one bypass is provided for guiding an adjustable proportion of propellant gas from the first feed for propellant gas into the suction connection piece and/or into the stop surface.
Mixture, comprising a) 40% to 90% by weight, in particular from 60% to 85% by weight of biodiesel, and b) 10% to 60% by weight, in particular 15% to 40% by weight of benzyl hemiformal. a) 40% to 90% by weight, in particular from 60% to 85% by weight of biodiesel, and b) 10% to 60% by weight, in particular 15% to 40% by weight of benzyl hemiformal.
A secondary battery including an electrode assembly comprising a unit body stack portion which consists of a stack of at least two basic unit bodies each comprising a 4-layer structure in which a first electrode, a first separator, a second electrode and a second separator are sequentially stacked, wherein coating materials having adhesive force are applied to respective surfaces of the first and second separators, and wherein a basic unit body is adhered to its adjacent basic unit body in the unit body stack portion; wherein in the unit body stack portion, the adhesive force between the basic unit body (1 10a) and its adjacent basic unit body is equal to or greater than adhesive force between the first electrode and the first separator in the basic unit body; characterized in that it is obtained by preparing a basic unit body which forms a 4 layers structure in which a first electrode, a first separator, a second electrode and a second separator are sequentially stacked; preparing a unit body stack portion by repeatedly stacking the basic unit body; accommodating the electrode assembly including the unit body stack portion in a battery case, then injecting electrolyte and sealing the battery case; and making a second separator of the one basic unit body be adhered to a first electrode of its adjacent basic unit body in the unit body stack portion by applying heat and pressure; wherein coating materials having adhesive force are applied to respective surfaces of the first and second separators wherein the temperature of the step is 45°C to 85°C, and wherein, after the step S400, a primary formation process is performed. wherein coating materials having adhesive force are applied to respective surfaces of the first and second separators, and wherein a basic unit body is adhered to its adjacent basic unit body in the unit body stack portion; wherein in the unit body stack portion, the adhesive force between the basic unit body (1 10a) and its adjacent basic unit body is equal to or greater than adhesive force between the first electrode and the first separator in the basic unit body; characterized in that it is obtained by preparing a basic unit body which forms a 4 layers structure in which a first electrode, a first separator, a second electrode and a second separator are sequentially stacked; preparing a unit body stack portion by repeatedly stacking the basic unit body; accommodating the electrode assembly including the unit body stack portion in a battery case, then injecting electrolyte and sealing the battery case; and making a second separator of the one basic unit body be adhered to a first electrode of its adjacent basic unit body in the unit body stack portion by applying heat and pressure; wherein coating materials having adhesive force are applied to respective surfaces of the first and second separators wherein the temperature of the step is 45°C to 85°C, and wherein, after the step S400, a primary formation process is performed.
A compound shown in a general formula, or a racemate, or a geometric or stereoisomeric isomer, or a pharmaceutically acceptable salt thereof, wherein R 1 and R 1' are independently selected from hydrogen, halogen, alkyl, cycloalkyl, heterocycloalkyl, alkylcycloalkyl, alkyl heterocycloalkyl, phenyl, heteroaryl, haloalkyl, or cyano, or R 1 and R 1' are cyclized to the cycloalkyl or the heterocycloalkyl together; R 2 is selected from hydrogen, halogen, hydroxyl, cyano, alkyl, alkoxy, alkoxyalkyl, or haloalkyl; R 3 is independently selected from hydrogen, alkyl, cycloalkyl, heterocycloalkyl, halogen, alkoxy, cyano, haloalkoxy, or sulfonyl; m is 0, 1, 2, or 3; R 4 is selected from hydrogen, alkyl, cycloalkyl, alkoxy, or haloalkyl; R 5 is selected from hydrogen, alkyl, cycloalkyl, alkoxy, or haloalkyl; R 6 is selected from hydrogen, halogen, cyano, alkyl, cycloalkyl, or haloalkyl; an A ring is selected from an aromatic ring or a heteroaromatic ring; R 7 is independently selected from hydrogen, halogen, cyano, alkyl, cycloalkyl, haloalkyl, alkoxy, haloalkoxy, or sulfonyl; n is 0, 1, 2, 3, 4, or 5; X is O, CH 2 or NH; and R 8 and R 9 are independently selected from hydrogen, alkyl, cycloalkyl, alkylcycloalkyl, or haloalkyl, or R 8 and R 9 are cyclized to the cycloalkyl or the heterocycloalkyl together. R 1 and R 1' are independently selected from hydrogen, halogen, alkyl, cycloalkyl, heterocycloalkyl, alkylcycloalkyl, alkyl heterocycloalkyl, phenyl, heteroaryl, haloalkyl, or cyano, or R 1 and R 1' are cyclized to the cycloalkyl or the heterocycloalkyl together; R 2 is selected from hydrogen, halogen, hydroxyl, cyano, alkyl, alkoxy, alkoxyalkyl, or haloalkyl; R 3 is independently selected from hydrogen, alkyl, cycloalkyl, heterocycloalkyl, halogen, alkoxy, cyano, haloalkoxy, or sulfonyl; m is 0, 1, 2, or 3; R 4 is selected from hydrogen, alkyl, cycloalkyl, alkoxy, or haloalkyl; R 5 is selected from hydrogen, alkyl, cycloalkyl, alkoxy, or haloalkyl; R 6 is selected from hydrogen, halogen, cyano, alkyl, cycloalkyl, or haloalkyl; an A ring is selected from an aromatic ring or a heteroaromatic ring; R 7 is independently selected from hydrogen, halogen, cyano, alkyl, cycloalkyl, haloalkyl, alkoxy, haloalkoxy, or sulfonyl; n is 0, 1, 2, 3, 4, or 5; X is O, CH 2 or NH; and R 8 and R 9 are independently selected from hydrogen, alkyl, cycloalkyl, alkylcycloalkyl, or haloalkyl, or R 8 and R 9 are cyclized to the cycloalkyl or the heterocycloalkyl together.
Apparatus for processing data, comprising: processing circuitry to perform processing operations specified by program instructions; and a decoder to decode instructions for memory access to generate control signals to control said processing circuitry to perform operations for the memory access; wherein said instructions for memory access have respective encodings specifying: instructions for protected memory access corresponding to operations for the protected memory access; and instructions for less-protected memory access corresponding to operations for the less-protected memory access; and said instructions for the less-protected memory access are associated with less restrictive conditions for the memory access than said protected memory access; and said processing circuitry has a plurality of exception level states comprising lower exception level states and higher exception level states and a memory address accessed with an instruction for the less-protected memory access within a program executing at an exception level state within said plurality of exception level states is shared with programs executing in said higher exception level states within said plurality of exception level states and another memory address accessed with another instruction for the protected memory access within another program executing at another exception level state within said plurality of exception level states is private to said other program. processing circuitry to perform processing operations specified by program instructions; and a decoder to decode instructions for memory access to generate control signals to control said processing circuitry to perform operations for the memory access; wherein said instructions for memory access have respective encodings specifying: instructions for protected memory access corresponding to operations for the protected memory access; and instructions for less-protected memory access corresponding to operations for the less-protected memory access; and instructions for protected memory access corresponding to operations for the protected memory access; and instructions for less-protected memory access corresponding to operations for the less-protected memory access; and said instructions for the less-protected memory access are associated with less restrictive conditions for the memory access than said protected memory access; and said processing circuitry has a plurality of exception level states comprising lower exception level states and higher exception level states and a memory address accessed with an instruction for the less-protected memory access within a program executing at an exception level state within said plurality of exception level states is shared with programs executing in said higher exception level states within said plurality of exception level states and another memory address accessed with another instruction for the protected memory access within another program executing at another exception level state within said plurality of exception level states is private to said other program.
A device for dispensing food products, such as bread and the like, comprising a box-like container body with a front opening, which is adapted to be loaded with a food product such as bread and the like, characterized in that it comprises an inclined plane which is arranged fixed within said box-like container body, is connected to the opening of said box-like container body, said inclined plane being inclined along two different axes, so as to be positioned inclined toward a front part of the box-like container body and being also inclined toward one side of the box-like container body, a plate being able to slide on said inclined plane and being actuatable by a lever, said plate being adapted to pass, as a consequence of the actuation of said lever, from an initial position for closing the opening of said box-like container body to an active position in which the passage of said food product is allowed for the dispensing thereof.
A waste container comprising: a containment tank defining at least one collecting compartment for wastes; at least one door oscillatably hinged to said containment tank and movable between a closing condition in which it is approached to the containment tank for closing the collection space and an opening condition in which it is raised relative to the containment tank to enable introduction of waste into the collection space; said waste container further comprising a locking device selectively activatable for retaining the door in the opening condition, characterized in that said locking device is selectively activatable in consequence of an action of lifting the door away from the containment tank, over the opening condition. a containment tank defining at least one collecting compartment for wastes; at least one door oscillatably hinged to said containment tank and movable between a closing condition in which it is approached to the containment tank for closing the collection space and an opening condition in which it is raised relative to the containment tank to enable introduction of waste into the collection space; said waste container further comprising a locking device selectively activatable for retaining the door in the opening condition, characterized in that said locking device is selectively activatable in consequence of an action of lifting the door away from the containment tank, over the opening condition.
A method for the production of biomass, which comprises: - planting rows of black poplar ( Populus nigra) or European aspen ( Populus tremula) saplings or cuttings in ridges with a density greater than 40,000 units per hectare, - cutting the plantation annually at the ridge level for a period of 15 to 20 years, and obtaining in each annual cut poplar stalks having a length less than 7 meters and a diameter less than 6 centimeters, - cutting the poplar stalks transversely into substantially cylindrical blocks of biomass having an adjustable length and a variable diameter, coinciding with the diameter of the poplar stalks in the cutting areas. - planting rows of black poplar ( Populus nigra) or European aspen ( Populus tremula) saplings or cuttings in ridges with a density greater than 40,000 units per hectare, - cutting the plantation annually at the ridge level for a period of 15 to 20 years, and obtaining in each annual cut poplar stalks having a length less than 7 meters and a diameter less than 6 centimeters, - cutting the poplar stalks transversely into substantially cylindrical blocks of biomass having an adjustable length and a variable diameter, coinciding with the diameter of the poplar stalks in the cutting areas.
Bone implant system having a number of bone implant modules (1, 10) which can be securely coupled with one another, which are respectively equipped with at least one surface section, which in order to come into contact with each other in the case of the coupling of at least two bone implant modules are provided in a selectable relative position, wherein the at least one surface section of at least one first bone implant module is provided or formed with a fine coupling structure comprising a multiplicity of structural elements (4, 5) disposed in a fine-meshed manner and the at least one surface section of at least one second bone implant module is provided or formed with a cooperating rough coupling structure comprising a number, smaller than in the case of the fine coupling structure, of structural elements disposed in a broad-meshed manner, characterised in that the structural elements (4, 5) of the fine coupling structure form a multiplicity of openings or receiving pockets spaced in a close-meshed manner and the structural elements of the rough coupling structure comprise at least two protuberances spaced in a wide-meshed manner, which are adapted for a friction-fitting penetration into selected/selectable openings or receiving pockets of the fine coupling structure; the receiving pockets are formed by a multiplicity of pin-shaped, bendably flexible protuberances, a close-meshed, flexible surface grid or a flexible loop profile on the surface of the first implant module, which respectively constitute the structural elements of the fine coupling structure; and the at least two protuberances of the rough coupling structure are flexurally resistant with respect to the structural elements of the fine coupling structure and are larger/broader in size than the receiving pockets formed by the structural elements of the fine coupling structure, in order at the penetration into selected receiving pockets to achieve that the structural elements of the fine coupling structure are pushed apart in a flexible manner.