A method for processing a photoresist composition, comprising: (a) applying on a substrate a photoresist composition comprising: (i) one or more resins that comprise photoacid-labile groups; (ii) a photoactive component, and (iii) one or more materials that comprise photoacid-labile groups and that are distinct from the one or more resins (i): wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins; the one or more resins (i) comprise photoacid-labile groups that are ester groups and do not comprise acetal photoacid-labile groups; and the one or more materials (iii) comprise 1) photoacid-labile groups that are acetal groups, and 2) carboxy groups, sulfonamide groups and/or hetero atom-substituted carbocyclic aryl groups; and (b) immersion exposing the photoresist layer to radiation for activating the photoresist composition. (a) applying on a substrate a photoresist composition comprising: (i) one or more resins that comprise photoacid-labile groups; (ii) a photoactive component, and (iii) one or more materials that comprise photoacid-labile groups and that are distinct from the one or more resins (i): wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins; the one or more resins (i) comprise photoacid-labile groups that are ester groups and do not comprise acetal photoacid-labile groups; and the one or more materials (iii) comprise 1) photoacid-labile groups that are acetal groups, and 2) carboxy groups, sulfonamide groups and/or hetero atom-substituted carbocyclic aryl groups; and (i) one or more resins that comprise photoacid-labile groups; (ii) a photoactive component, and (iii) one or more materials that comprise photoacid-labile groups and that are distinct from the one or more resins (i): wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins; the one or more resins (i) comprise photoacid-labile groups that are ester groups and do not comprise acetal photoacid-labile groups; and the one or more materials (iii) comprise 1) photoacid-labile groups that are acetal groups, and 2) carboxy groups, sulfonamide groups and/or hetero atom-substituted carbocyclic aryl groups; and wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins; the one or more resins (i) comprise photoacid-labile groups that are ester groups and do not comprise acetal photoacid-labile groups; and the one or more materials (iii) comprise 1) photoacid-labile groups that are acetal groups, and 2) carboxy groups, sulfonamide groups and/or hetero atom-substituted carbocyclic aryl groups; and (b) immersion exposing the photoresist layer to radiation for activating the photoresist composition.