A system, comprising an integrated circuit including - a first substrate and - at least one first MOS transistor having a first polysilicon region electrically insulated from the first substrate and including a gate region, a second polysilicon region electrically insulated from the first polysilicon region and from the first substrate and including a source region, a substrate region and a drain region of said first transistor, the first polysilicon region being located between a zone of the first substrate and the second polysilicon region, wherein the first transistor is a PMOS transistor, - the first PMOS transistor has its source region connected to the ground and has a threshold voltage such that it is ON when a zero voltage is applied to its gate, and OFF in the presence of a negative bias of its gate, and wherein the system comprises: - a closed container, - the integrated circuit having a first and a second terminal (TDI, TDO) connected by an electrically conductive wire having a severable part and arranged to be severed at its severable part in case of opening or attempting to open the container, and - a detection device configured to detect severing of the severable part, the detection device including, within the integrated circuit, a first capacitor electrically insulated from the first substrate of the integrated circuit and connected to the first terminal, the first PMOS transistor having its gate connected to the second terminal and its source connected to the ground, a second capacitor electrically insulated from the first substrate of the integrated circuit and having a first electrode connected to the drain of the first PMOS transistor, and a measurement means configured to measure the voltage of said first electrode, - a voltage of said first electrode lower than a threshold being representative of present or past severing of said severable part. - a first substrate and - at least one first MOS transistor having a first polysilicon region electrically insulated from the first substrate and including a gate region, a second polysilicon region electrically insulated from the first polysilicon region and from the first substrate and including a source region, a substrate region and a drain region of said first transistor, the first polysilicon region being located between a zone of the first substrate and the second polysilicon region, wherein the first transistor is a PMOS transistor, - the first PMOS transistor has its source region connected to the ground and has a threshold voltage such that it is ON when a zero voltage is applied to its gate, and OFF in the presence of a negative bias of its gate, and wherein the system comprises: - a closed container, - the integrated circuit having a first and a second terminal (TDI, TDO) connected by an electrically conductive wire having a severable part and arranged to be severed at its severable part in case of opening or attempting to open the container, and - a detection device configured to detect severing of the severable part, the detection device including, within the integrated circuit, a first capacitor electrically insulated from the first substrate of the integrated circuit and connected to the first terminal, the first PMOS transistor having its gate connected to the second terminal and its source connected to the ground, a second capacitor electrically insulated from the first substrate of the integrated circuit and having a first electrode connected to the drain of the first PMOS transistor, and a measurement means configured to measure the voltage of said first electrode, - a voltage of said first electrode lower than a threshold being representative of present or past severing of said severable part. - a closed container, - the integrated circuit having a first and a second terminal (TDI, TDO) connected by an electrically conductive wire having a severable part and arranged to be severed at its severable part in case of opening or attempting to open the container, and - a detection device configured to detect severing of the severable part, the detection device including, within the integrated circuit, a first capacitor electrically insulated from the first substrate of the integrated circuit and connected to the first terminal, the first PMOS transistor having its gate connected to the second terminal and its source connected to the ground, a second capacitor electrically insulated from the first substrate of the integrated circuit and having a first electrode connected to the drain of the first PMOS transistor, and a measurement means configured to measure the voltage of said first electrode, - a voltage of said first electrode lower than a threshold being representative of present or past severing of said severable part.