A method of creating a fluid channel in a wafer assembly, the method comprising: creating one or more channels in a first surface of a first semiconductor wafer, and creating one or more vias (116a, 116b) in the first semiconductor wafer that are in fluid communication with the one or more channels of the first semiconductor wafer, and then creating an oxide surface on the first surface of the first semiconductor wafer; creating one or more channels in a second surface of a second semiconductor wafer that align with the one or more channels in the first surface of the first semiconductor wafer, and creating one or more vias (116a, 116b) in the second semiconductor wafer (112, 108) that are in fluid communication with the one or more channels of the second semiconductor wafer, and then creating an oxide surface on the second surface of the second semiconductor wafer; and bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the second surface of the second semiconductor wafer to create a wafer assembly and to seal the one or more channels at edges defined by the bonded first and second surfaces (124, 128); wherein bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the second surface of the second semiconductor wafer seals the one or more aligned channels in the first semiconductor wafer and second semiconductor wafer at the edges defined by the bonded first and second surfaces (124, 128); and wherein an inorganic covalent bondline is created between the oxide surface of the first surface of the first semiconductor wafer and the oxide surface of the second surface of the second semiconductor wafer by bonding the first and second surfaces (124, 128). creating one or more channels in a first surface of a first semiconductor wafer, and creating one or more vias (116a, 116b) in the first semiconductor wafer that are in fluid communication with the one or more channels of the first semiconductor wafer, and then creating an oxide surface on the first surface of the first semiconductor wafer; creating one or more channels in a second surface of a second semiconductor wafer that align with the one or more channels in the first surface of the first semiconductor wafer, and creating one or more vias (116a, 116b) in the second semiconductor wafer (112, 108) that are in fluid communication with the one or more channels of the second semiconductor wafer, and then creating an oxide surface on the second surface of the second semiconductor wafer; and bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the second surface of the second semiconductor wafer to create a wafer assembly and to seal the one or more channels at edges defined by the bonded first and second surfaces (124, 128); wherein bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the second surface of the second semiconductor wafer seals the one or more aligned channels in the first semiconductor wafer and second semiconductor wafer at the edges defined by the bonded first and second surfaces (124, 128); and wherein an inorganic covalent bondline is created between the oxide surface of the first surface of the first semiconductor wafer and the oxide surface of the second surface of the second semiconductor wafer by bonding the first and second surfaces (124, 128).