A converter module for a variable speed drive comprising: a plurality of switching modules, one switching module of the plurality of switching modules comprising a first semiconductor switch (64, 70) connected in anti-parallel or series with a second semiconductor switch (66 or 78), the second semiconductor switch being controllably switched during a precharge operation of the variable speed drive to limit an inrush current into the DC link, characterized in that: - the first semiconductor switch is switched to an off position during a precharge condition of the variable speed drive, substantially preventing current through the first semiconductor switch during precharge conditions of the variable speed drive; and - the second semiconductor switch comprising a maximum current rating less than a maximum current rating of the first semiconductor switch, wherein the second semiconductor switch is controlled by applying an auxiliary gate to emitter voltage that is greater than a standard gate to emitter voltage applied to the first semiconductor switch. a plurality of switching modules, one switching module of the plurality of switching modules comprising a first semiconductor switch (64, 70) connected in anti-parallel or series with a second semiconductor switch (66 or 78), the second semiconductor switch being controllably switched during a precharge operation of the variable speed drive to limit an inrush current into the DC link, characterized in that: - the first semiconductor switch is switched to an off position during a precharge condition of the variable speed drive, substantially preventing current through the first semiconductor switch during precharge conditions of the variable speed drive; and - the second semiconductor switch comprising a maximum current rating less than a maximum current rating of the first semiconductor switch, wherein the second semiconductor switch is controlled by applying an auxiliary gate to emitter voltage that is greater than a standard gate to emitter voltage applied to the first semiconductor switch. characterized in that: - the first semiconductor switch is switched to an off position during a precharge condition of the variable speed drive, substantially preventing current through the first semiconductor switch during precharge conditions of the variable speed drive; and - the second semiconductor switch comprising a maximum current rating less than a maximum current rating of the first semiconductor switch, wherein the second semiconductor switch is controlled by applying an auxiliary gate to emitter voltage that is greater than a standard gate to emitter voltage applied to the first semiconductor switch. - the first semiconductor switch is switched to an off position during a precharge condition of the variable speed drive, substantially preventing current through the first semiconductor switch during precharge conditions of the variable speed drive; and - the second semiconductor switch comprising a maximum current rating less than a maximum current rating of the first semiconductor switch, wherein the second semiconductor switch is controlled by applying an auxiliary gate to emitter voltage that is greater than a standard gate to emitter voltage applied to the first semiconductor switch.