An electrostatic discharge ESD protection circuit, comprising: a negative ESD protection module and a positive ESD protection module, wherein the positive ESD protection module and the negative ESD protection module are connected in parallel; and two ends of the positive ESD protection module and two ends of the negative ESD protection module are separately connected to a gate and a source of a P-type enhanced GaN power device; the negative ESD protection module comprises a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor; one end of the first resistor is connected to the gate of the P-type enhanced GaN power device, and the other end of the first resistor is separately connected to a gate of the first field effect transistor and one end of the charging capacitor; a drain of the first field effect transistor is connected to a gate of the P-type enhanced GaN power device, and a source of the first field effect transistor is connected to a drain of the second field effect transistor; and a gate and a source of the second field effect transistor, and a second end of the charging capacitor are connected to the source of the P-type enhanced GaN power device; and the positive ESD protection module comprises a fourth field effect transistor, wherein a gate and a drain of the fourth field effect transistor are connected to the gate of the P-type enhanced GaN power device, wherein a clamp diode string is further disposed on the positive ESD protection module, an anode of the clamp diode string is connected to the gate of the P-type enhanced GaN power device, wherein a second resistor and a fifth field effect transistor are further disposed between the cathode of the clamp diode string and the P-type enhanced GaN power device; the cathode of the clamp diode string is separately connected to one end of the second resistor and a gate of the fifth field effect transistor; a drain of the fifth field effect transistor is connected to the source of the fourth field effect transistor; the other end of the second resistor and a source of the fifth field effect transistor are connected to the source of the P-type enhanced GaN power device. the negative ESD protection module comprises a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor; one end of the first resistor is connected to the gate of the P-type enhanced GaN power device, and the other end of the first resistor is separately connected to a gate of the first field effect transistor and one end of the charging capacitor; a drain of the first field effect transistor is connected to a gate of the P-type enhanced GaN power device, and a source of the first field effect transistor is connected to a drain of the second field effect transistor; and a gate and a source of the second field effect transistor, and a second end of the charging capacitor are connected to the source of the P-type enhanced GaN power device; and the positive ESD protection module comprises a fourth field effect transistor, wherein a gate and a drain of the fourth field effect transistor are connected to the gate of the P-type enhanced GaN power device, wherein a clamp diode string is further disposed on the positive ESD protection module, an anode of the clamp diode string is connected to the gate of the P-type enhanced GaN power device, wherein a second resistor and a fifth field effect transistor are further disposed between the cathode of the clamp diode string and the P-type enhanced GaN power device; the cathode of the clamp diode string is separately connected to one end of the second resistor and a gate of the fifth field effect transistor; a drain of the fifth field effect transistor is connected to the source of the fourth field effect transistor; the other end of the second resistor and a source of the fifth field effect transistor are connected to the source of the P-type enhanced GaN power device.