An integrated device package comprising: an encapsulation portion comprising: a first die; a first set of vias coupled to the first die; a second die; a second set of vias coupled to the second die; a bridge means configured to provide an electrical path between the first die and the second die, the bridge means coupled to the first die through the first set of vias, the bridge means further coupled to the second die through the second set of vias, wherein the bridge means comprises a set of bridge interconnects (306, 308,310);; an encapsulation layer at least partially encapsulating the first die, the second die, the bridge means, the first set of vias, and the second set of vias; and a redistribution portion coupled to the encapsulation portion, the redistribution portion comprising: a set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); at least one dielectric layer; and wherein the first set of vias comprises a first pillar coupled to the first die and to one of the bridge interconnects (306, 308, 310) and wherein the second set of vias comprises second pillar coupled to the second die and to one of the bridge interconnects (306, 308, 310); a third set of vias coupled to the first die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); and a fourth set of vias coupled to the second die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043) wherein the third set of vias and the fourth set of vias comprises a via density that is greater than a bridge interconnect density of the bridge means. an encapsulation portion comprising: a first die; a first set of vias coupled to the first die; a second die; a second set of vias coupled to the second die; a bridge means configured to provide an electrical path between the first die and the second die, the bridge means coupled to the first die through the first set of vias, the bridge means further coupled to the second die through the second set of vias, wherein the bridge means comprises a set of bridge interconnects (306, 308,310);; an encapsulation layer at least partially encapsulating the first die, the second die, the bridge means, the first set of vias, and the second set of vias; and a first die; a first set of vias coupled to the first die; a second die; a second set of vias coupled to the second die; a bridge means configured to provide an electrical path between the first die and the second die, the bridge means coupled to the first die through the first set of vias, the bridge means further coupled to the second die through the second set of vias, wherein the bridge means comprises a set of bridge interconnects (306, 308,310);; an encapsulation layer at least partially encapsulating the first die, the second die, the bridge means, the first set of vias, and the second set of vias; and a redistribution portion coupled to the encapsulation portion, the redistribution portion comprising: a set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); at least one dielectric layer; and wherein the first set of vias comprises a first pillar coupled to the first die and to one of the bridge interconnects (306, 308, 310) and wherein the second set of vias comprises second pillar coupled to the second die and to one of the bridge interconnects (306, 308, 310); a third set of vias coupled to the first die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); and a fourth set of vias coupled to the second die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043) wherein the third set of vias and the fourth set of vias comprises a via density that is greater than a bridge interconnect density of the bridge means. a set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); at least one dielectric layer; and wherein the first set of vias comprises a first pillar coupled to the first die and to one of the bridge interconnects (306, 308, 310) and wherein the second set of vias comprises second pillar coupled to the second die and to one of the bridge interconnects (306, 308, 310); a third set of vias coupled to the first die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043); and a fourth set of vias coupled to the second die and the set of redistribution interconnects (743, 843, 941, 1041, 745, 943, 1043) wherein the third set of vias and the fourth set of vias comprises a via density that is greater than a bridge interconnect density of the bridge means.