A memory cell comprising: a portion of a first thin-film structure, wherein the first thin-film structure exhibits magnetoresistance and has a first longitudinal axis; a portion of a second thin-film structure, wherein the second thin-film structure exhibits magnetoresistance and has a second longitudinal axis, and the second longitudinal axis is parallel to the first longitudinal axis; a portion of a first signal line coinciding with the portion of the first thin-film structure and the portion of the second thin film structure and electrically isolated from the first thin-film structure and the second thin-film structure; a portion of a second signal line coinciding with the portion of the first signal line and the portion of the first thin-film structure, and the portion of the second thin-film structure, the second signal line being electrically isolated from the first signal line, the first thin-film structure, and the second thin-film structure; wherein said portion of the first signal line and said portion of the second signal line are located in between said portion of the first thin-film structure and said portion of the second thin-film structure; and a plurality of keeper elements in direct contact with the portion of the first thin-film structure and the portion of the second thin-film structure such that the portion of the first thin-film structure, the portion of the second thin-film structure, and the keeper elements form a fully-closed-flux structure of the memory cell; and wherein, the portion of the first thin-film structure has an easy axis of magnetization perpendicular to the first longitudinal axis of the first thin-film structure and in a first plane of the first thin-film structure, the second thin-film structure has an easy axis of magnetization perpendicular to the second longitudinal axis of the second thing film structure and in a second plane of the second thin-film structure, and wherein the first and second signal lines are configured to conduct currents having a primary direction of current flow parallel to the first longitudinal axis and the second longitudinal axis to thereby generate magnetizing fields having components in the first plane and the second plane that are perpendicular to the first longitudinal axis of the first thin-film structure and the second longitudinal axis of the second thin-film structure. a portion of a first thin-film structure, wherein the first thin-film structure exhibits magnetoresistance and has a first longitudinal axis; a portion of a second thin-film structure, wherein the second thin-film structure exhibits magnetoresistance and has a second longitudinal axis, and the second longitudinal axis is parallel to the first longitudinal axis; a portion of a first signal line coinciding with the portion of the first thin-film structure and the portion of the second thin film structure and electrically isolated from the first thin-film structure and the second thin-film structure; a portion of a second signal line coinciding with the portion of the first signal line and the portion of the first thin-film structure, and the portion of the second thin-film structure, the second signal line being electrically isolated from the first signal line, the first thin-film structure, and the second thin-film structure; wherein said portion of the first signal line and said portion of the second signal line are located in between said portion of the first thin-film structure and said portion of the second thin-film structure; and a plurality of keeper elements in direct contact with the portion of the first thin-film structure and the portion of the second thin-film structure such that the portion of the first thin-film structure, the portion of the second thin-film structure, and the keeper elements form a fully-closed-flux structure of the memory cell; and wherein, the portion of the first thin-film structure has an easy axis of magnetization perpendicular to the first longitudinal axis of the first thin-film structure and in a first plane of the first thin-film structure, the second thin-film structure has an easy axis of magnetization perpendicular to the second longitudinal axis of the second thing film structure and in a second plane of the second thin-film structure, and wherein the first and second signal lines are configured to conduct currents having a primary direction of current flow parallel to the first longitudinal axis and the second longitudinal axis to thereby generate magnetizing fields having components in the first plane and the second plane that are perpendicular to the first longitudinal axis of the first thin-film structure and the second longitudinal axis of the second thin-film structure.