Surface emitting semiconductor light-emitting diode, LED, comprising a sequence arranged one above another of: - a layer of a substrate contact of a first conductivity type, - a common substrate, - a first barrier layer of the first conductivity type, - a light-emitting active layer, - a second barrier layer of a second conductivity type, a first contact layer of the second conductivity type, and surface-implanted regions in the first contact layer which are electrically insulated from one another by irradiation with electrical charge carriers, and a number of electrically conductive surface contacts for contacting the first contact layer, characterized - in that the substrate consists of a semiconductor substrate and the substrate has a first conductivity type or the substrate is an electrically insulating substrate (2.1) or the substrate consists of a metal or a composite material, - in that a reflector layer of the first conductivity type is present between the substrate and the first barrier layer, - in that the first contact layer has at least one emitting surface via which radiation emitted by the active layer emerges from the LED, and the emitting surfaces are surrounded by surface-implanted regions in the first contact layer which are irradiated with electrical charge carriers and which are embodied as electrically insulating and optically isolating, and - in that the regions of the layers which are situated below the emitting surface, proceeding from the first contact layer and extending as far as at least through the active layer and into the reflector layer, are electrically insulated and optically isolated from regions of the layers which are not situated below the emitting surface by means of first deep-implanted regions (12.1) irradiated with electrical charge carriers, wherein the deep-implanted regions (12.1) are embodied in a manner extended from the first contact layer in a perpendicular direction, and - in that the deep-implanted regions (12.1) have a smaller horizontal extent than the surface-implanted regions, and in that the deep-implanted regions have a ring-shaped cross section that remains constant over the perpendicular extent of the deep-implanted regions, and in that the surface-implanted regions are extended across the whole area over the entire surface of the LED with the exception of the emitting surfaces. - a layer of a substrate contact of a first conductivity type, - a common substrate, - a first barrier layer of the first conductivity type, - a light-emitting active layer, - a second barrier layer of a second conductivity type, a first contact layer of the second conductivity type, and surface-implanted regions in the first contact layer which are electrically insulated from one another by irradiation with electrical charge carriers, and a number of electrically conductive surface contacts for contacting the first contact layer, characterized - in that the substrate consists of a semiconductor substrate and the substrate has a first conductivity type or the substrate is an electrically insulating substrate (2.1) or the substrate consists of a metal or a composite material, - in that a reflector layer of the first conductivity type is present between the substrate and the first barrier layer, - in that the first contact layer has at least one emitting surface via which radiation emitted by the active layer emerges from the LED, and the emitting surfaces are surrounded by surface-implanted regions in the first contact layer which are irradiated with electrical charge carriers and which are embodied as electrically insulating and optically isolating, and - in that the regions of the layers which are situated below the emitting surface, proceeding from the first contact layer and extending as far as at least through the active layer and into the reflector layer, are electrically insulated and optically isolated from regions of the layers which are not situated below the emitting surface by means of first deep-implanted regions (12.1) irradiated with electrical charge carriers, wherein the deep-implanted regions (12.1) are embodied in a manner extended from the first contact layer in a perpendicular direction, and - in that the deep-implanted regions (12.1) have a smaller horizontal extent than the surface-implanted regions, and in that the deep-implanted regions have a ring-shaped cross section that remains constant over the perpendicular extent of the deep-implanted regions, and in that the surface-implanted regions are extended across the whole area over the entire surface of the LED with the exception of the emitting surfaces.