A semiconductor module, comprising: a plurality of power semiconductor elements (537, 539, 541, 543) that include an upper arm side power semiconductor element (537, 539) and a lower arm side power semiconductor element (541, 543); a first metal heat dissipation member and a second metal heat dissipation member that face to one another, with the plurality of power semiconductor elements (537, 539, 541, 543) sandwiched therebetween; a positive conducting plate that is disposed between the first metal heat dissipation member and the upper arm side power semiconductor element (537, 539); a negative conducting plate that is disposed between the second metal heat dissipation member and the lower arm side power semiconductor element (541,543); and a DC terminal (532, 572) that is configured to supply DC power to the plurality of power semiconductor elements (537, 539, 541, 543), wherein: the DC terminal (532, 572) includes a positive terminal and a negative terminal; the positive terminal is configured to supply the DC power to the upper arm side power semiconductor element (537, 539) via the positive conducting plate; the negative terminal is configured to supply DC power to the lower arm side power semiconductor element (541, 543) via the negative conducting plate; each of the positive terminal and the negative terminal includes a main surface that is wider than other surfaces thereof and a side surface that is narrower than the main surface, characterized in that the positive conducting plate and the negative conducting plate are spaced apart from each other in a direction along an arrangement direction of the first metal heat dissipation member and the second metal heat dissipation member; and the positive conducting plate and the negative conducting plate are each provided with bends so that the positive terminal and the negative terminal are aligned on a straight line parallel to heat dissipation surfaces of the semiconductor module so that the side surface of the positive terminal faces to the side surface of the negative terminal outside a space formed between the first metal heat dissipation member and the second metal heat dissipation member. a plurality of power semiconductor elements (537, 539, 541, 543) that include an upper arm side power semiconductor element (537, 539) and a lower arm side power semiconductor element (541, 543); a first metal heat dissipation member and a second metal heat dissipation member that face to one another, with the plurality of power semiconductor elements (537, 539, 541, 543) sandwiched therebetween; a positive conducting plate that is disposed between the first metal heat dissipation member and the upper arm side power semiconductor element (537, 539); a negative conducting plate that is disposed between the second metal heat dissipation member and the lower arm side power semiconductor element (541,543); and a DC terminal (532, 572) that is configured to supply DC power to the plurality of power semiconductor elements (537, 539, 541, 543), wherein: the DC terminal (532, 572) includes a positive terminal and a negative terminal; the positive terminal is configured to supply the DC power to the upper arm side power semiconductor element (537, 539) via the positive conducting plate; the negative terminal is configured to supply DC power to the lower arm side power semiconductor element (541, 543) via the negative conducting plate; each of the positive terminal and the negative terminal includes a main surface that is wider than other surfaces thereof and a side surface that is narrower than the main surface, characterized in that the positive conducting plate and the negative conducting plate are spaced apart from each other in a direction along an arrangement direction of the first metal heat dissipation member and the second metal heat dissipation member; and the positive conducting plate and the negative conducting plate are each provided with bends so that the positive terminal and the negative terminal are aligned on a straight line parallel to heat dissipation surfaces of the semiconductor module so that the side surface of the positive terminal faces to the side surface of the negative terminal outside a space formed between the first metal heat dissipation member and the second metal heat dissipation member. the DC terminal (532, 572) includes a positive terminal and a negative terminal; the positive terminal is configured to supply the DC power to the upper arm side power semiconductor element (537, 539) via the positive conducting plate; the negative terminal is configured to supply DC power to the lower arm side power semiconductor element (541, 543) via the negative conducting plate; each of the positive terminal and the negative terminal includes a main surface that is wider than other surfaces thereof and a side surface that is narrower than the main surface, characterized in that the positive conducting plate and the negative conducting plate are spaced apart from each other in a direction along an arrangement direction of the first metal heat dissipation member and the second metal heat dissipation member; and the positive conducting plate and the negative conducting plate are each provided with bends so that the positive terminal and the negative terminal are aligned on a straight line parallel to heat dissipation surfaces of the semiconductor module so that the side surface of the positive terminal faces to the side surface of the negative terminal outside a space formed between the first metal heat dissipation member and the second metal heat dissipation member.