Charge transfer device - having a charge transfer channel: in a semiconductor substrate - having a doped conduction layer - for movably accepting the charge carriers, - having a sequence of at least two electrically isolated gates - which adjacently succeed one another - for transferring the charge carriers in the conduction layer - in a flow direction, - wherein the charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer, - and having a clock generator - having a clock frequency of more than 100 MHz, preferably of more than 150 MHz, more than 200 MHz or more than 250 MHz and particularly preferably up to 300 MHz or 400 MHz, - which clock generator applies changes in potential at the clock frequency to the gates, - for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer, wherein - the charge transfer channel - and the sequence of two adjoining gates - have a region of a protuberance - in which the cross section in the flow direction first increases, preferably by more than 20%, 40%, 80% or 100%, and then decreases again, preferably by more than 20%, 40%, or 80%, and - which is arranged in a manner extending over the region of the two mutually adjoining gates, wherein the maximum width of the gates situated at the beginning and end of the gate sequence in the flow direction forms the typical width of the cross section of the conduction transfer channel, characterized in that the charge transfer channel and the sequence of two adjoining gates have a region of a constriction - in which the cross section decreases in the flow direction, and preferably decreases continuously, particularly preferably in a constant fashion, and - is arranged at least in the region of the corresponding gate upstream of the region of the protuberance or in the regions of the corresponding gate upstream of the protuberance and the adjoining gate of the protuberance, wherein the two adjoining gates have a continuous region of the protuberance, in the case of which the cross section is enlarged by approximately 25% in comparison with the typical width, and wherein, directly upstream of the protuberance in the flow direction, the first gate having the protuberance has the constriction, in the case of which the cross section of the charge transfer channel is narrower in comparison with the typical width, as a result of which, in the flow direction, the width of the charge transfer channel perpendicular to the flow direction is narrower at the entry into the protuberance than at the exit from the protuberance. - having a charge transfer channel: in a semiconductor substrate - having a doped conduction layer - for movably accepting the charge carriers, - having a sequence of at least two electrically isolated gates - which adjacently succeed one another - for transferring the charge carriers in the conduction layer - in a flow direction, - wherein the charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer, - and having a clock generator - having a clock frequency of more than 100 MHz, preferably of more than 150 MHz, more than 200 MHz or more than 250 MHz and particularly preferably up to 300 MHz or 400 MHz, - which clock generator applies changes in potential at the clock frequency to the gates, - for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer, - the charge transfer channel - and the sequence of two adjoining gates - have a region of a protuberance - in which the cross section in the flow direction first increases, preferably by more than 20%, 40%, 80% or 100%, and then decreases again, preferably by more than 20%, 40%, or 80%, and - which is arranged in a manner extending over the region of the two mutually adjoining gates, wherein the maximum width of the gates situated at the beginning and end of the gate sequence in the flow direction forms the typical width of the cross section of the conduction transfer channel, characterized in that the charge transfer channel and the sequence of two adjoining gates have a region of a constriction - in which the cross section decreases in the flow direction, and preferably decreases continuously, particularly preferably in a constant fashion, and - is arranged at least in the region of the corresponding gate upstream of the region of the protuberance or in the regions of the corresponding gate upstream of the protuberance and the adjoining gate of the protuberance, wherein the two adjoining gates have a continuous region of the protuberance, in the case of which the cross section is enlarged by approximately 25% in comparison with the typical width, and wherein, directly upstream of the protuberance in the flow direction, the first gate having the protuberance has the constriction, in the case of which the cross section of the charge transfer channel is narrower in comparison with the typical width, as a result of which, in the flow direction, the width of the charge transfer channel perpendicular to the flow direction is narrower at the entry into the protuberance than at the exit from the protuberance.