A circuit comprising: a component having a first terminal, a second terminal, and an ultra-thin dielectric layer having a thickness of 3 nm or less, wherein the first and second terminals are formed on opposite sides of the ultra-thin dielectric layer and are spaced apart from each other by the thickness of the dielectric layer, such that the first and second terminals contact the dielectric layer and are physically separated from each other; and a current source coupled to the component and including an impedance device, a first transistor having a first drain terminal coupled to the first terminal of the component, and having a first source terminal coupled to a first power supply node, a second diode-connected transistor having a second gate terminal and a second drain terminal coupled to a first gate terminal of the first transistor, and a second source terminal coupled to the first power supply node, a third source-follower transistor having a third drain terminal coupled to the first gate terminal of the first transistor, and a third gate terminal coupled to the first terminal of the component; and the impedance device coupled between a third source terminal of the third transistor and a second power supply node, wherein the second terminal of the component is coupled to the second power supply node, wherein the current source produces, based on a current flowing through the impedance device, a current proportional to the current flowing through the second transistor and the impedance device, and wherein the first transistor applies the current to the first terminal of the component to cause the applied current to flow from the first terminal through the dielectric layer to the second terminal, wherein the impedance device controls the applied current to cause the applied current to vary with temperature so as to compensate for variations in a voltage across the component over temperature, and wherein the component provides a reference output voltage (V OUT) between the first and second terminals in response to the current flow through the dielectric layer. a component having a first terminal, a second terminal, and an ultra-thin dielectric layer having a thickness of 3 nm or less, wherein the first and second terminals are formed on opposite sides of the ultra-thin dielectric layer and are spaced apart from each other by the thickness of the dielectric layer, such that the first and second terminals contact the dielectric layer and are physically separated from each other; and a current source coupled to the component and including an impedance device, a first transistor having a first drain terminal coupled to the first terminal of the component, and having a first source terminal coupled to a first power supply node, a second diode-connected transistor having a second gate terminal and a second drain terminal coupled to a first gate terminal of the first transistor, and a second source terminal coupled to the first power supply node, a third source-follower transistor having a third drain terminal coupled to the first gate terminal of the first transistor, and a third gate terminal coupled to the first terminal of the component; and the impedance device coupled between a third source terminal of the third transistor and a second power supply node, an impedance device, a first transistor having a first drain terminal coupled to the first terminal of the component, and having a first source terminal coupled to a first power supply node, a second diode-connected transistor having a second gate terminal and a second drain terminal coupled to a first gate terminal of the first transistor, and a second source terminal coupled to the first power supply node, a third source-follower transistor having a third drain terminal coupled to the first gate terminal of the first transistor, and a third gate terminal coupled to the first terminal of the component; and the impedance device coupled between a third source terminal of the third transistor and a second power supply node, wherein the second terminal of the component is coupled to the second power supply node, wherein the current source produces, based on a current flowing through the impedance device, a current proportional to the current flowing through the second transistor and the impedance device, and wherein the first transistor applies the current to the first terminal of the component to cause the applied current to flow from the first terminal through the dielectric layer to the second terminal, wherein the impedance device controls the applied current to cause the applied current to vary with temperature so as to compensate for variations in a voltage across the component over temperature, and wherein the component provides a reference output voltage (V OUT) between the first and second terminals in response to the current flow through the dielectric layer.