Active pixel image sensor comprising a matrix of pixels organised in rows and columns and a reading circuit comprising a separate reading channel for each column of pixels, in which each pixel comprises: ∘ a photodiode, ∘ a storage node for the electrical charges integrated by the photodiode, ∘ a transfer transistor in order to selectively authorise the transfer of the electrical charges from the photodiode to the storage node, ∘ a transistor for resetting the storage node in order to selectively connect the storage node to a source (VS RST) of resetting voltage (V RST), ∘ a row selection transistor for selectively connecting the pixel to the reading channel of the column to which it belongs, and ∘ a transistor which is mounted as a voltage follower in order to transfer the voltage at the terminals of the storage node to the reading channel via the row selection transistor; characterised in that each reading channel comprises a subtraction block which has two inputs and an output, the subtraction block being connected to receive at a first input the voltage (Vp) at the terminals of the storage node of one of the pixels of the corresponding column via the transistor which is mounted as a voltage follower and the row selection transistor of the pixel and at a second input a reference voltage (V REF) which is external to the matrix having a value which is substantially equal to the resetting voltage of the pixels of the matrix seen at the input of the reading channel, and to provide at the output thereof a signal which represents a voltage level difference present at the inputs thereof; and in that the sensor also comprises a controller configured to control the transistors of the pixels and the reading circuit in order to - carry out a global resetting of the photodiodes; - carry out a resetting of the storage nodes of the pixels of the matrix and acquire a first digital image, referred to as a black image; then - carry out a global charge transfer of the photodiodes to the storage nodes of the pixels; then - acquire a second digital image referred to as an integration image; in order to carry out an image acquisition in global shutter mode with subtraction of the resetting noise and non-destructive reading of the pixels of the integrated charges. ∘ a photodiode, ∘ a storage node for the electrical charges integrated by the photodiode, ∘ a transfer transistor in order to selectively authorise the transfer of the electrical charges from the photodiode to the storage node, ∘ a transistor for resetting the storage node in order to selectively connect the storage node to a source (VS RST) of resetting voltage (V RST), ∘ a row selection transistor for selectively connecting the pixel to the reading channel of the column to which it belongs, and ∘ a transistor which is mounted as a voltage follower in order to transfer the voltage at the terminals of the storage node to the reading channel via the row selection transistor; characterised in that each reading channel comprises a subtraction block which has two inputs and an output, the subtraction block being connected to receive at a first input the voltage (Vp) at the terminals of the storage node of one of the pixels of the corresponding column via the transistor which is mounted as a voltage follower and the row selection transistor of the pixel and at a second input a reference voltage (V REF) which is external to the matrix having a value which is substantially equal to the resetting voltage of the pixels of the matrix seen at the input of the reading channel, and to provide at the output thereof a signal which represents a voltage level difference present at the inputs thereof; - carry out a global resetting of the photodiodes; - carry out a resetting of the storage nodes of the pixels of the matrix and acquire a first digital image, referred to as a black image; then - carry out a global charge transfer of the photodiodes to the storage nodes of the pixels; then - acquire a second digital image referred to as an integration image;