Method for producing a laser chip comprising the following steps: - providing a semiconductor wafer comprising a top side and an underside, wherein the semiconductor wafer, on the top side, comprises a plurality of integrated laser diode structures which are arranged one behind another along a defined breaking direction that runs perpendicular to the growth direction of the semiconductor wafer; - creating a plurality of depressions arranged one behind another along the breaking direction on the top side of the semiconductor wafer, wherein each depression comprises a front boundary face and a rear boundary face successively in the breaking direction, wherein the depression, on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer, wherein, in the case of at least one depression, the rear boundary face encloses an angle of between 95° and 170° with the bottom face, wherein the at least one depression comprises a shoulder adjacent to the rear boundary face, wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; - creating a trench running in the breaking direction and arranged in a breaking plane on the underside of the semiconductor wafer, wherein the breaking plane is oriented perpendicular to the top side of the semiconductor wafer and runs through the depressions; - breaking the semiconductor wafer in the breaking direction at the breaking plane. - providing a semiconductor wafer comprising a top side and an underside, wherein the semiconductor wafer, on the top side, comprises a plurality of integrated laser diode structures which are arranged one behind another along a defined breaking direction that runs perpendicular to the growth direction of the semiconductor wafer; - creating a plurality of depressions arranged one behind another along the breaking direction on the top side of the semiconductor wafer, wherein each depression comprises a front boundary face and a rear boundary face successively in the breaking direction, wherein the depression, on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer, wherein, in the case of at least one depression, the rear boundary face encloses an angle of between 95° and 170° with the bottom face, wherein the at least one depression comprises a shoulder adjacent to the rear boundary face, wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; wherein the depression, on its base, has a bottom face that connects the front boundary face to the rear boundary face and is oriented substantially parallel to the top side of the semiconductor wafer, wherein, in the case of at least one depression, the rear boundary face encloses an angle of between 95° and 170° with the bottom face, wherein the at least one depression comprises a shoulder adjacent to the rear boundary face, wherein the shoulder comprises a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; - creating a trench running in the breaking direction and arranged in a breaking plane on the underside of the semiconductor wafer, wherein the breaking plane is oriented perpendicular to the top side of the semiconductor wafer and runs through the depressions; - breaking the semiconductor wafer in the breaking direction at the breaking plane.