A hybrid switch, comprising: a junction gate field-effect transistor (JFET), the JFET comprising: a JFET drain contact extending along a first plane, the first plane extending along a first direction, a JFET gate contact extending along the first plane, the JFET gate contact disposed above the JFET drain contact along a second direction, the second direction being perpendicular to the first direction, and a JFET source contact disposed above the JFET drain contact along the second direction, the JFET source contact extending along the first plane; a metal-oxide-semiconductor field-effect transistor (MOSFET), the MOSFET comprising: a MOS drain region extending along the first plane, the MOS drain region disposed above the JFET source contact along the second direction, and a MOS source contact extending along the first plane, the MOS source contact disposed above the MOS drain region along the second direction; characterized by: an oxide layer extending along the first plane in the first direction across the width of the hybrid switch, the oxide layer being above the JFET source contact and the JFET gate contact and below the MOS source contact and the MOS drain region in the second direction, such that the oxide layer is on top of the JFET, and the MOSFET is on top of the oxide layer; and a first tungsten via, the first tungsten via extending through the oxide layer in the second direction, the entirety of the first tungsten via having a first common centerline extending in the second direction, the first tungsten via electrically connecting the JFET source contact to the MOS drain region. a junction gate field-effect transistor (JFET), the JFET comprising: a JFET drain contact extending along a first plane, the first plane extending along a first direction, a JFET gate contact extending along the first plane, the JFET gate contact disposed above the JFET drain contact along a second direction, the second direction being perpendicular to the first direction, and a JFET source contact disposed above the JFET drain contact along the second direction, the JFET source contact extending along the first plane; a JFET drain contact extending along a first plane, the first plane extending along a first direction, a JFET gate contact extending along the first plane, the JFET gate contact disposed above the JFET drain contact along a second direction, the second direction being perpendicular to the first direction, and a JFET source contact disposed above the JFET drain contact along the second direction, the JFET source contact extending along the first plane; a metal-oxide-semiconductor field-effect transistor (MOSFET), the MOSFET comprising: a MOS drain region extending along the first plane, the MOS drain region disposed above the JFET source contact along the second direction, and a MOS source contact extending along the first plane, the MOS source contact disposed above the MOS drain region along the second direction; a MOS drain region extending along the first plane, the MOS drain region disposed above the JFET source contact along the second direction, and a MOS source contact extending along the first plane, the MOS source contact disposed above the MOS drain region along the second direction; characterized by: an oxide layer extending along the first plane in the first direction across the width of the hybrid switch, the oxide layer being above the JFET source contact and the JFET gate contact and below the MOS source contact and the MOS drain region in the second direction, such that the oxide layer is on top of the JFET, and the MOSFET is on top of the oxide layer; and a first tungsten via, the first tungsten via extending through the oxide layer in the second direction, the entirety of the first tungsten via having a first common centerline extending in the second direction, the first tungsten via electrically connecting the JFET source contact to the MOS drain region. an oxide layer extending along the first plane in the first direction across the width of the hybrid switch, the oxide layer being above the JFET source contact and the JFET gate contact and below the MOS source contact and the MOS drain region in the second direction, such that the oxide layer is on top of the JFET, and the MOSFET is on top of the oxide layer; and a first tungsten via, the first tungsten via extending through the oxide layer in the second direction, the entirety of the first tungsten via having a first common centerline extending in the second direction, the first tungsten via electrically connecting the JFET source contact to the MOS drain region.