A bifacial P-type PERC solar cell, comprising consecutively: a rear silver electrode, rear aluminum grid lines, a rear passivation layer, P-type silicon, an N-type emitter, a front silicon nitride film and a front silver electrode, wherein the rear silver electrode is perpendicularly connected with the rear aluminum grid lines, grid line backbones are disposed on the rear aluminum grid lines, an outer aluminum grid frame is disposed around the rear aluminum grid lines, the grid line backbones are connected with the rear aluminum grid lines, and the outer aluminum grid frame is connected with the rear aluminum grid lines and the rear silver electrode; a first laser grooving region is formed in the rear passivation layer by laser grooving, and the rear aluminum grid lines are connected to the P-type silicon via the first laser grooving region; the first laser grooving region includes a plurality of sets of first laser grooving units arranged horizontally, each of the sets of first laser grooving units includes one or more first laser grooving bodies arranged horizontally, and the rear aluminum grid lines are perpendicular to the first laser grooving bodies; a second laser grooving region is disposed below the outer aluminum grid frame, the second laser grooving region includes second laser grooving units that are arranged vertically or horizontally, each set of second laser grooving units includes one or more second laser grooving bodies that are arranged vertically or horizontally, and the outer aluminum grid frame is perpendicular to the second laser grooving bodies; the first laser grooving units are arranged in parallel; in each of the first laser grooving units, the first laser groove bodies are arranged side by side, and in the same horizontal plane or staggered up and down; spacing between the first laser grooving units is 0.5-50mm; in each of the first laser grooving units, spacing between the first laser grooving bodies is 0.5-50mm; the first laser grooving bodies each have a length of 50-5000μm and a width of 10-500μm; the grid line backbones are perpendicularly connected with the rear aluminum grid lines; a third laser grooving region is disposed below the grid line backbones, the third laser grooving region includes a plurality of sets of third laser grooving units, each of the sets of third laser grooving units includes one or more third laser grooving bodies arranged vertically, the third laser grooving bodies are perpendicular to the grid line backbones, and the grid line backbones are connected to the P-type silicon via the third laser grooving bodies. a first laser grooving region is formed in the rear passivation layer by laser grooving, and the rear aluminum grid lines are connected to the P-type silicon via the first laser grooving region; the first laser grooving region includes a plurality of sets of first laser grooving units arranged horizontally, each of the sets of first laser grooving units includes one or more first laser grooving bodies arranged horizontally, and the rear aluminum grid lines are perpendicular to the first laser grooving bodies; a second laser grooving region is disposed below the outer aluminum grid frame, the second laser grooving region includes second laser grooving units that are arranged vertically or horizontally, each set of second laser grooving units includes one or more second laser grooving bodies that are arranged vertically or horizontally, and the outer aluminum grid frame is perpendicular to the second laser grooving bodies; the first laser grooving units are arranged in parallel; in each of the first laser grooving units, the first laser groove bodies are arranged side by side, and in the same horizontal plane or staggered up and down; spacing between the first laser grooving units is 0.5-50mm; in each of the first laser grooving units, spacing between the first laser grooving bodies is 0.5-50mm; the first laser grooving bodies each have a length of 50-5000μm and a width of 10-500μm; the grid line backbones are perpendicularly connected with the rear aluminum grid lines; a third laser grooving region is disposed below the grid line backbones, the third laser grooving region includes a plurality of sets of third laser grooving units, each of the sets of third laser grooving units includes one or more third laser grooving bodies arranged vertically, the third laser grooving bodies are perpendicular to the grid line backbones, and the grid line backbones are connected to the P-type silicon via the third laser grooving bodies.