An integrated circuit device comprising at least one radio frequency, RF, transceiver module; the at least one RF transceiver module comprising: a plurality of low noise amplifiers, LNAs, (220, 223, 226) having respective input ports (221, 224, 227) operably coupled to at least one external contact (202, 204) of the Integrated circuit device and arranged to receive a first RF signal from the at least one external contact (202, 204) and output (222, 225, 228) an amplified received first RF signal; and a plurality of power amplifiers, PAs, (230, 235) having respective output ports (231, 236) operably coupled to the at least one external contact (202, 204) of the integrated circuit device, and arranged to receive at respective power amplifier input ports (232, 237) a second RF signal and output (231, 236) an amplified second RF signal to be transmitted; wherein the plurality of LNAs (220, 223, 226) and the plurality of PAs (230, 235) are selectively configurable to operate in at least a first, multi-antenna configuration and a second, single antenna high transmit power configuration, wherein in the second, single antenna high transmit power configuration: the plurality of PAs (230, 235) is selectively configured to operate by configuring the integrated circuit device such that the second RF signal is amplified by at least two PAs (230, 235), and output (231, 236) to the at least one external contact (202, 204), at which the amplified second RF signals are combined, the plurality of LNAs (220, 223, 226) comprise an additional LNA operably coupled at an input thereof to the at least one external contact (202, 204) of the integrated circuit device and having an input impedance at least halved or further reduced with respect to other LNAs (220, 223) of the plurality of LNAs. a plurality of low noise amplifiers, LNAs, (220, 223, 226) having respective input ports (221, 224, 227) operably coupled to at least one external contact (202, 204) of the Integrated circuit device and arranged to receive a first RF signal from the at least one external contact (202, 204) and output (222, 225, 228) an amplified received first RF signal; and a plurality of power amplifiers, PAs, (230, 235) having respective output ports (231, 236) operably coupled to the at least one external contact (202, 204) of the integrated circuit device, and arranged to receive at respective power amplifier input ports (232, 237) a second RF signal and output (231, 236) an amplified second RF signal to be transmitted; wherein the plurality of LNAs (220, 223, 226) and the plurality of PAs (230, 235) are selectively configurable to operate in at least a first, multi-antenna configuration and a second, single antenna high transmit power configuration, wherein in the second, single antenna high transmit power configuration: the plurality of PAs (230, 235) is selectively configured to operate by configuring the integrated circuit device such that the second RF signal is amplified by at least two PAs (230, 235), and output (231, 236) to the at least one external contact (202, 204), at which the amplified second RF signals are combined, the plurality of LNAs (220, 223, 226) comprise an additional LNA operably coupled at an input thereof to the at least one external contact (202, 204) of the integrated circuit device and having an input impedance at least halved or further reduced with respect to other LNAs (220, 223) of the plurality of LNAs. the plurality of PAs (230, 235) is selectively configured to operate by configuring the integrated circuit device such that the second RF signal is amplified by at least two PAs (230, 235), and output (231, 236) to the at least one external contact (202, 204), at which the amplified second RF signals are combined, the plurality of LNAs (220, 223, 226) comprise an additional LNA operably coupled at an input thereof to the at least one external contact (202, 204) of the integrated circuit device and having an input impedance at least halved or further reduced with respect to other LNAs (220, 223) of the plurality of LNAs.