A semiconductor device, comprising: a semiconductor body comprising a first surface, a second surface opposite to the first surface in a vertical direction (y), an active region, and a sensor region arranged adjacent to the active region in a first horizontal direction (x); a plurality of transistor cells (30 1, 30 2) at least partly integrated in the active region, each transistor cell (30 1, 30 2) comprising a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region; at least one sensor cell (30 S) at least partly integrated in the sensor region, each of the at least one sensor cell (30 S) comprising a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region; a plurality of first contact plugs (42 1); an intermediate layer; and a second contact plug, wherein the source regions of the plurality of transistor cells (30 1, 30 2) are coupled to a first source electrode, and the source regions of the at least one sensor cell (30 S) are coupled to a second source electrode separate and distant from the first source electrode, at least one of the plurality of transistor cells (30 1, 30 2) directly adjoins one of the at least one sensor cells, each of the plurality of first contact plugs (42 1) extends between one of the source regions of the at least one sensor cell (30 S) and the intermediate layer, and provides an electrical connection between the respective source region and the intermediate layer, and the second contact plug extends between the intermediate layer and the second source electrode, and provides an electrical connection between the intermediate layer and the second source electrode. a semiconductor body comprising a first surface, a second surface opposite to the first surface in a vertical direction (y), an active region, and a sensor region arranged adjacent to the active region in a first horizontal direction (x); a plurality of transistor cells (30 1, 30 2) at least partly integrated in the active region, each transistor cell (30 1, 30 2) comprising a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region; at least one sensor cell (30 S) at least partly integrated in the sensor region, each of the at least one sensor cell (30 S) comprising a source region, a body region, a drift region separated from the source region by the body region, and a gate electrode dielectrically insulated from the body region; a plurality of first contact plugs (42 1); an intermediate layer; and a second contact plug, wherein the source regions of the plurality of transistor cells (30 1, 30 2) are coupled to a first source electrode, and the source regions of the at least one sensor cell (30 S) are coupled to a second source electrode separate and distant from the first source electrode, at least one of the plurality of transistor cells (30 1, 30 2) directly adjoins one of the at least one sensor cells, each of the plurality of first contact plugs (42 1) extends between one of the source regions of the at least one sensor cell (30 S) and the intermediate layer, and provides an electrical connection between the respective source region and the intermediate layer, and the second contact plug extends between the intermediate layer and the second source electrode, and provides an electrical connection between the intermediate layer and the second source electrode.