A light emitting diode chip (100; 200; 200a), comprising: a substrate; a light emitting structure arranged on the substate, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an alternating lamination bottom structure, the substrate arranged on the alternating lamination bottom structure, the alternating lamination bottom structure comprising a plurality of dielectric pairs, each of the dielectric pairs comprising a first material layer comprising a first refractive index and a second material layer comprising a second refractive index, the first refractive index being greater than the second refractive index, the plurality of dielectric pairs comprising: a plurality of first dielectric pairs comprising the first material layer and the second material layer, the first material layer and the second material layer each comprising an optical thickness less than λ/4, wherein λ is a central wavelength of the visible light range, characterized in that said plurality of dielectric pairs further comprises: a plurality of second dielectric pairs comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4, wherein λ is a central wavelength of the visible light range, and wherein the plurality of second dielectric pairs is surrounded by first dielectric pairs, third dielectric pairs, or by one first dielectric pair and one third dielectric pair. a substrate; a light emitting structure arranged on the substate, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an alternating lamination bottom structure, the substrate arranged on the alternating lamination bottom structure, the alternating lamination bottom structure comprising a plurality of dielectric pairs, each of the dielectric pairs comprising a first material layer comprising a first refractive index and a second material layer comprising a second refractive index, the first refractive index being greater than the second refractive index, the plurality of dielectric pairs comprising: a plurality of first dielectric pairs comprising the first material layer and the second material layer, the first material layer and the second material layer each comprising an optical thickness less than λ/4, wherein λ is a central wavelength of the visible light range, characterized in that said plurality of dielectric pairs further comprises: a plurality of second dielectric pairs comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4, a plurality of second dielectric pairs comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4, wherein λ is a central wavelength of the visible light range, and wherein the plurality of second dielectric pairs is surrounded by first dielectric pairs, third dielectric pairs, or by one first dielectric pair and one third dielectric pair.