A solar cell comprising: a semiconductor substrate of a first conductivity type having a first conductivity type diffusion layer and a second conductivity type diffusion layer which are formed on a backside of a light-receiving surface of the semiconductor substrate, a first electrode portion joined to the first conductivity type diffusion layer, and a second electrode portion joined to the second conductivity type diffusion layer, a first electrode line portion formed on the first electrode portion, a second electrode line portion formed on the second electrode portion, a first electrode bus bar portion connected with the first electrode line portion, and a second electrode bus bar portion connected with the second electrode line portion; a first insulator film which is formed so as to cover a side portion and a top of the second electrode portion at least in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed so as to cover a side portion and a top of the first electrode portion at least in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is at least formed continuously in a line shape under the first insulator film, the first electrode portion is at least formed continuously in a line shape under the second insulator film, the first electrode line portion is provided as a continuous line shape on the first electrode portion, except for the region where the second insulator film is located, so as to connect at least with the continuously formed line-shaped first electrode portion, the second electrode line portion is provided as a continuous line shape on the second electrode portion, except for the region where the first insulator film is located, so as to connect at least with the continuously formed line-shaped second electrode portion. a semiconductor substrate of a first conductivity type having a first conductivity type diffusion layer and a second conductivity type diffusion layer which are formed on a backside of a light-receiving surface of the semiconductor substrate, a first electrode portion joined to the first conductivity type diffusion layer, and a second electrode portion joined to the second conductivity type diffusion layer, a first electrode line portion formed on the first electrode portion, a second electrode line portion formed on the second electrode portion, a first electrode bus bar portion connected with the first electrode line portion, and a second electrode bus bar portion connected with the second electrode line portion; a first insulator film which is formed so as to cover a side portion and a top of the second electrode portion at least in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed so as to cover a side portion and a top of the first electrode portion at least in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is at least formed continuously in a line shape under the first insulator film, the first electrode portion is at least formed continuously in a line shape under the second insulator film, the first electrode line portion is provided as a continuous line shape on the first electrode portion, except for the region where the second insulator film is located, so as to connect at least with the continuously formed line-shaped first electrode portion, the second electrode line portion is provided as a continuous line shape on the second electrode portion, except for the region where the first insulator film is located, so as to connect at least with the continuously formed line-shaped second electrode portion.