A complementary metal oxide semiconductor (CMOS) sensor device (100, 260, 300, 350) comprising: a CMOS substrate (102, 150); an insulator layer (104, 162, 224) on an upper surface of the CMOS substrate (102, 150); a first sidewall extending upwardly away from the insulator layer (104, 152), the first sidewall having a wall thickness of less than about 50 nm; a first rim formed integrally with the first sidewall, the first rim extending away from the first sidewall along a plane generally parallel to an upper surface of the CMOS substrate (102, 152); a membrane (234, 262) formed integrally with the first rim, the membrane (234, 262) extending away from the first rim along the plane; a second sidewall extending upwardly away from the insulator layer (104, 162, 224), the second sidewall formed on the first sidewall (126, 128, 236); a first horizontally extending bottom portion formed integrally with the first sidewall; and a second horizontally extending bottom portion formed integrally with the second sidewall; characterized in that the complementary metal oxide semiconductor sensor device (100, 260, 300, 350) includes: an extension formed integrally with the second horizontally extending bottom portion, the extension extending downwardly from the second horizontally extending bottom portion toward the CMOS substrate (102, 152) through an opening (194, 196, 240) in the first horizontally extending bottom portion; and a feed through (118, 120, 154, 156, 222) having a first portion abutting the extension within the insulator layer (104, 162, 224) and a second portion extending along the plane within the insulator layer (104, 162, 224). a CMOS substrate (102, 150); an insulator layer (104, 162, 224) on an upper surface of the CMOS substrate (102, 150); a first sidewall extending upwardly away from the insulator layer (104, 152), the first sidewall having a wall thickness of less than about 50 nm; a first rim formed integrally with the first sidewall, the first rim extending away from the first sidewall along a plane generally parallel to an upper surface of the CMOS substrate (102, 152); a membrane (234, 262) formed integrally with the first rim, the membrane (234, 262) extending away from the first rim along the plane; a second sidewall extending upwardly away from the insulator layer (104, 162, 224), the second sidewall formed on the first sidewall (126, 128, 236); a first horizontally extending bottom portion formed integrally with the first sidewall; and a second horizontally extending bottom portion formed integrally with the second sidewall; characterized in that the complementary metal oxide semiconductor sensor device (100, 260, 300, 350) includes: an extension formed integrally with the second horizontally extending bottom portion, the extension extending downwardly from the second horizontally extending bottom portion toward the CMOS substrate (102, 152) through an opening (194, 196, 240) in the first horizontally extending bottom portion; and a feed through (118, 120, 154, 156, 222) having a first portion abutting the extension within the insulator layer (104, 162, 224) and a second portion extending along the plane within the insulator layer (104, 162, 224). an extension formed integrally with the second horizontally extending bottom portion, the extension extending downwardly from the second horizontally extending bottom portion toward the CMOS substrate (102, 152) through an opening (194, 196, 240) in the first horizontally extending bottom portion; and a feed through (118, 120, 154, 156, 222) having a first portion abutting the extension within the insulator layer (104, 162, 224) and a second portion extending along the plane within the insulator layer (104, 162, 224).