A solar cell comprising: a semiconductor substrate; a tunneling layer formed on one surface of the semiconductor substrate; a conductive area (32, 34) including an emitter area and a back field area formed on the tunneling layer; a passivation film formed on the conductive area (32, 34), the passivation film having a plurality of contact holes; a protective oxide film for preventing a deterioration of passivation property on the conductive area (32, 34) inside the plurality of contact holes, the protective oxide film being formed over at least one of at least a portion of an inner side surface of each of the plurality of contact holes and the passivation film; and a plurality of electrodes (42, 44) having a plurality of first electrodes and a plurality of second electrodes, and electrically connected to the conductive area (32, 34) through the plurality of contact holes with the protective oxide film interposed therebetween; wherein the plurality of contact holes has a plurality of first contact holes located in the emitter area for connecting the emitter area and the first electrode with each other, and a plurality of second contact holes located in the back field area for connecting the back field area and the second electrode with each other; wherein the passivation film includes a multi-layer including a first layer disposed on the conductive area (32, 34) and a second layer disposed on the first layer and including a material different from that of the first layer; wherein each of the plurality of contact holes includes a first contact hole region formed in the first layer and a second contact hole region formed in the second layer, the second contact hole region communicating with the first contact hole region, and wherein the first contact hole region includes a region having a larger size than the second contact hole region. a semiconductor substrate; a tunneling layer formed on one surface of the semiconductor substrate; a conductive area (32, 34) including an emitter area and a back field area formed on the tunneling layer; a passivation film formed on the conductive area (32, 34), the passivation film having a plurality of contact holes; a protective oxide film for preventing a deterioration of passivation property on the conductive area (32, 34) inside the plurality of contact holes, the protective oxide film being formed over at least one of at least a portion of an inner side surface of each of the plurality of contact holes and the passivation film; and a plurality of electrodes (42, 44) having a plurality of first electrodes and a plurality of second electrodes, and electrically connected to the conductive area (32, 34) through the plurality of contact holes with the protective oxide film interposed therebetween; wherein the plurality of contact holes has a plurality of first contact holes located in the emitter area for connecting the emitter area and the first electrode with each other, and a plurality of second contact holes located in the back field area for connecting the back field area and the second electrode with each other; wherein the passivation film includes a multi-layer including a first layer disposed on the conductive area (32, 34) and a second layer disposed on the first layer and including a material different from that of the first layer; wherein each of the plurality of contact holes includes a first contact hole region formed in the first layer and a second contact hole region formed in the second layer, the second contact hole region communicating with the first contact hole region, and wherein the first contact hole region includes a region having a larger size than the second contact hole region.