An array substrate, comprising: a substrate; and a plurality of complementary thin film transistors provided on the substrate, wherein the plurality of complementary thin film transistors comprise a first thin film transistor of N-type and a second thin film transistor of P-type, the first thin film transistor comprising a first gate electrode, a first source electrode, and a first drain electrode, the second thin film transistor comprising a second gate electrode, a second source electrode, and a second drain electrode, the first thin film transistor being an oxide thin film transistor, and the second thin film transistor being a poly-silicon thin film transistor; wherein a poly-silicon semiconductor active layer, a gate insulating layer, a second gate electrode metal layer, an oxide semiconductor active layer, a dielectric layer and a first gate metal layer are provided in turn on the substrate; characterized in that: the second gate electrode of the second thin film transistor, the first source electrode and the first drain electrode of the first thin film transistor are provided in a same layer of the second gate metal layer; the first gate electrode of the first thin film transistor, the second source electrode and the second drain electrode of the second thin film transistor are provided in a same layer of the first gate metal layer; and the first source electrode and the first drain electrode of the first thin film transistor directly contact and are electrically connected with the oxide semiconductor active layer, the second source electrode and the second drain electrode of the second thin film transistor are electrically connected with the poly-silicon semiconductor active layer through a via hole. a substrate; and a plurality of complementary thin film transistors provided on the substrate, wherein the plurality of complementary thin film transistors comprise a first thin film transistor of N-type and a second thin film transistor of P-type, the first thin film transistor comprising a first gate electrode, a first source electrode, and a first drain electrode, the second thin film transistor comprising a second gate electrode, a second source electrode, and a second drain electrode, the first thin film transistor being an oxide thin film transistor, and the second thin film transistor being a poly-silicon thin film transistor; wherein a poly-silicon semiconductor active layer, a gate insulating layer, a second gate electrode metal layer, an oxide semiconductor active layer, a dielectric layer and a first gate metal layer are provided in turn on the substrate; characterized in that: the second gate electrode of the second thin film transistor, the first source electrode and the first drain electrode of the first thin film transistor are provided in a same layer of the second gate metal layer; the first gate electrode of the first thin film transistor, the second source electrode and the second drain electrode of the second thin film transistor are provided in a same layer of the first gate metal layer; and the first source electrode and the first drain electrode of the first thin film transistor directly contact and are electrically connected with the oxide semiconductor active layer, the second source electrode and the second drain electrode of the second thin film transistor are electrically connected with the poly-silicon semiconductor active layer through a via hole. the second gate electrode of the second thin film transistor, the first source electrode and the first drain electrode of the first thin film transistor are provided in a same layer of the second gate metal layer; the first gate electrode of the first thin film transistor, the second source electrode and the second drain electrode of the second thin film transistor are provided in a same layer of the first gate metal layer; and the first source electrode and the first drain electrode of the first thin film transistor directly contact and are electrically connected with the oxide semiconductor active layer, the second source electrode and the second drain electrode of the second thin film transistor are electrically connected with the poly-silicon semiconductor active layer through a via hole.