A Schottky barrier diode, comprising: a semiconductor body with a main surface, a doped region of the semiconductor body, the doped region extending to the main surface, a further doped region of the semiconductor body within the doped region, the further doped region extending to the main surface, the doped region and the further doped region having opposite types of electric conductivity, a subregion (DPWell) and a further subregion (SPWell) of the further doped region, the subregions (DPWell, SPWell) being contiguous with one another, the further subregion (SPWell) comprising a higher doping concentration than the subregion (DPWell) the subregion (DPWell) and the further subregion (SPWELL) having the same type of electric conductivity as the further doped region, a silicide layer on the main surface, the silicide layer forming a Schottky interface with the doped region, the further subregion (SPWELL) being located closer to the Schottky interface than the subregion (DPWELL), an electric contact on the doped region, the further doped region being located between the Schottky interface and the position at which the electric contact contacts the doped region, and a further electric contact applied on the further subregion (SPWELL) and electrically connecting the further doped region with the silicide layer, an insulating region at the main surface between the electric contact and the further electric contact, characterized in that a field plate is arranged on the insulating region, the insulating region separating the field plate from the further doped region, and the electric contact electrically connecting the doped region with the field plate. a semiconductor body with a main surface, a doped region of the semiconductor body, the doped region extending to the main surface, a further doped region of the semiconductor body within the doped region, the further doped region extending to the main surface, the doped region and the further doped region having opposite types of electric conductivity, a subregion (DPWell) and a further subregion (SPWell) of the further doped region, the subregions (DPWell, SPWell) being contiguous with one another, the further subregion (SPWell) comprising a higher doping concentration than the subregion (DPWell) the subregion (DPWell) and the further subregion (SPWELL) having the same type of electric conductivity as the further doped region, a silicide layer on the main surface, the silicide layer forming a Schottky interface with the doped region, the further subregion (SPWELL) being located closer to the Schottky interface than the subregion (DPWELL), an electric contact on the doped region, the further doped region being located between the Schottky interface and the position at which the electric contact contacts the doped region, and a further electric contact applied on the further subregion (SPWELL) and electrically connecting the further doped region with the silicide layer, an insulating region at the main surface between the electric contact and the further electric contact, characterized in that a field plate is arranged on the insulating region, the insulating region separating the field plate from the further doped region, and the electric contact electrically connecting the doped region with the field plate.