Method for manufacturing multiple semiconductor packages, comprising the steps of - providing an electrically conducting leadframe including a front side (fs) and a back side (bs), wherein the leadframe comprises - multiple die pads, - at least one set of contact pads (22,23) per die pad, and - a support lead connected to the sets of contact pads (22,23) assigned to adjacent die pads, - mounting a semiconductor chip on the front side (fs) of each die pad resulting in a leadframe assembly, - at least partially encapsulating the leadframe assembly, thereby exposing at least the back sides (bs) of the contact pads from the encapsulation, wherein the encapsulation is generated by arranging the leadframe assembly in a mold, and wherein a mold compound is applied into the mold thereby at least partially encapsulating the semiconductor chip and partially encapsulating the leadframe, wherein each semiconductor chip is a sensor chip, wherein the mold comprises a protrusion per sensor chip, wherein the leadframe assembly is arranged in the mold with each protrusion facing a sensing element of the assigned sensor chip or facing an area on the sensor chip reserved for allocating a sensing element, each protrusion resulting in an access opening in the encapsulation for the sensing element, - arranging the encapsulated leadframe assembly on a dicing tape with a front side facing the dicing tape and a back side including the exposed back sides (bs) of the contact pads facing away from the dicing tape and with the encapsulation and the access opening facing the dicing tape, - separating the support leads from the connected contact pads, thereby generating semiconductor packages comprising an exposed side face (sf) of each contact pad, - applying an electroless immersion plating process to the semiconductor packages by immersing the singulated semiconductor packages into a bath comprising silver ions resulting in a silver plating on at least the back side (bs) and the side face (sf) of each contact pad and subsequently immersing the resulting semiconductor packages into a bath comprising gold ions resulting in a gold plating on top of the silver plating, wherein the electroless immersion plating process is applied to the semiconductor packages when residing on the dicing tape. - providing an electrically conducting leadframe including a front side (fs) and a back side (bs), wherein the leadframe comprises - multiple die pads, - at least one set of contact pads (22,23) per die pad, and - a support lead connected to the sets of contact pads (22,23) assigned to adjacent die pads, - multiple die pads, - at least one set of contact pads (22,23) per die pad, and - a support lead connected to the sets of contact pads (22,23) assigned to adjacent die pads, - mounting a semiconductor chip on the front side (fs) of each die pad resulting in a leadframe assembly, - at least partially encapsulating the leadframe assembly, thereby exposing at least the back sides (bs) of the contact pads from the encapsulation, wherein the encapsulation is generated by arranging the leadframe assembly in a mold, and wherein a mold compound is applied into the mold thereby at least partially encapsulating the semiconductor chip and partially encapsulating the leadframe, wherein each semiconductor chip is a sensor chip, wherein the mold comprises a protrusion per sensor chip, wherein the leadframe assembly is arranged in the mold with each protrusion facing a sensing element of the assigned sensor chip or facing an area on the sensor chip reserved for allocating a sensing element, each protrusion resulting in an access opening in the encapsulation for the sensing element, - arranging the encapsulated leadframe assembly on a dicing tape with a front side facing the dicing tape and a back side including the exposed back sides (bs) of the contact pads facing away from the dicing tape and with the encapsulation and the access opening facing the dicing tape, - separating the support leads from the connected contact pads, thereby generating semiconductor packages comprising an exposed side face (sf) of each contact pad, - applying an electroless immersion plating process to the semiconductor packages by immersing the singulated semiconductor packages into a bath comprising silver ions resulting in a silver plating on at least the back side (bs) and the side face (sf) of each contact pad and subsequently immersing the resulting semiconductor packages into a bath comprising gold ions resulting in a gold plating on top of the silver plating, wherein the electroless immersion plating process is applied to the semiconductor packages when residing on the dicing tape.