A method for manufacturing at least one microbolometer, including the following steps: ∘ making anchoring pillars, extending from a substrate, and each including an electrically-conductive material; ∘ making heat-insulating arms, each including a layer of a metal material in contact with the electrically-conductive material the anchoring pillar and forming a polarisation electrode; ∘ making a membrane intended to be suspended over the substrate by the anchoring pillars and the heat-insulating arms, and containing: • said polarisation electrodes, • a so-called intermediate insulating layer partially covering the polarisation electrodes and having openings leading onto the polarisation electrodes, • a thermistor material, made of a first compound (VO x) based on vanadium oxide, continuously formed from a so-called central portion (14.1) covering the intermediate insulating layer and from so-called lateral portions (14.2) coming into contact with the polarisation electrodes throughout the openings; characterised in that it further includes the following steps: ∘ determining a so-called non-zero effective amount (y eff) of at least one additional chemical element incorporated by ion implantation into the first compound, thereby forming a so-called modified compound (VO x A y), the electrical resistivity ρ l of which at room temperature is lower than or equal to 10% of the electrical resistivity ρ c of said first compound (VO x) at room temperature; ∘ locally incorporating, by ion implantation, into the lateral portions (14.2) of the thermistor material, an amount (y) of said additional chemical element greater than or equal to the effective amount (y eff). ∘ making anchoring pillars, extending from a substrate, and each including an electrically-conductive material; ∘ making heat-insulating arms, each including a layer of a metal material in contact with the electrically-conductive material the anchoring pillar and forming a polarisation electrode; ∘ making a membrane intended to be suspended over the substrate by the anchoring pillars and the heat-insulating arms, and containing: • said polarisation electrodes, • a so-called intermediate insulating layer partially covering the polarisation electrodes and having openings leading onto the polarisation electrodes, • a thermistor material, made of a first compound (VO x) based on vanadium oxide, continuously formed from a so-called central portion (14.1) covering the intermediate insulating layer and from so-called lateral portions (14.2) coming into contact with the polarisation electrodes throughout the openings; • said polarisation electrodes, • a so-called intermediate insulating layer partially covering the polarisation electrodes and having openings leading onto the polarisation electrodes, • a thermistor material, made of a first compound (VO x) based on vanadium oxide, continuously formed from a so-called central portion (14.1) covering the intermediate insulating layer and from so-called lateral portions (14.2) coming into contact with the polarisation electrodes throughout the openings; characterised in that it further includes the following steps: ∘ determining a so-called non-zero effective amount (y eff) of at least one additional chemical element incorporated by ion implantation into the first compound, thereby forming a so-called modified compound (VO x A y), the electrical resistivity ρ l of which at room temperature is lower than or equal to 10% of the electrical resistivity ρ c of said first compound (VO x) at room temperature; ∘ locally incorporating, by ion implantation, into the lateral portions (14.2) of the thermistor material, an amount (y) of said additional chemical element greater than or equal to the effective amount (y eff). ∘ determining a so-called non-zero effective amount (y eff) of at least one additional chemical element incorporated by ion implantation into the first compound, thereby forming a so-called modified compound (VO x A y), the electrical resistivity ρ l of which at room temperature is lower than or equal to 10% of the electrical resistivity ρ c of said first compound (VO x) at room temperature; ∘ locally incorporating, by ion implantation, into the lateral portions (14.2) of the thermistor material, an amount (y) of said additional chemical element greater than or equal to the effective amount (y eff).