A method for manufacturing a semiconductor device, comprising at least: a step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; a step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and a step of radiating ultraviolet rays to the adhesive film in order to obtain an ultraviolet-cured adhesive film and then removing the adhesive film from the semiconductor wafer by peeling off the adhesive film, wherein, as the adhesive film, an adhesive film including a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base material layer, the adhesive resin layer including an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of the adhesive resin layer surface after ultraviolet curing, which is measured using a method described below, being equal to or less than 2.0 kV is used, method: ultraviolet rays having a main wavelength of 365 nm are radiated to the adhesive resin layer using a high-pressure mercury lamp in an environment of 25°C at a radiation intensity of 100 mW/cm 2 and an ultraviolet amount of 1,080 mJ/cm 2, thereby photocuring the adhesive resin layer, and then a voltage is applied to a surface of the adhesive layer for 30 seconds under conditions of an applied voltage of 10 kV, a distance between a specimen and electrodes of 20 mm, 25°C, and 50%RH, and the saturated electrostatic potential (V 1) of the surface of the adhesive resin layer is computed according to JIS L1094, and wherein a tack force of the surface of the adhesive resin layer after ultraviolet curing in step, which is measured using a method described below, is equal to or less than 0.1 N/cm 2, method: ultraviolet rays having a main wavelength of 365 nm are radiated to the adhesive resin layer using a high-pressure mercury lamp in an environment of 25°C at a radiation intensity of 100 mW/cm 2 and an ultraviolet amount of 1,080 mJ/cm 2, thereby photocuring the adhesive resin layer, and then the tack force of the surface of the adhesive resin layer is measured using a method in which, using a probe tack tester as a measurement instrument, a probe having a diameter of 5 mm and the surface of the adhesive resin layer are brought into contact with each other at a rate of 10 mm/second and held in contact with each other at a contact load of 0.98 N/cm 2 for 10 seconds, and then the probe is peeled off from the surface of the adhesive resin layer in a vertical direction at a rate of 10 mm/second. a step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; a step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and a step of radiating ultraviolet rays to the adhesive film in order to obtain an ultraviolet-cured adhesive film and then removing the adhesive film from the semiconductor wafer by peeling off the adhesive film, wherein, as the adhesive film, an adhesive film including a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side of the base material layer, the adhesive resin layer including an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V 1 of the adhesive resin layer surface after ultraviolet curing, which is measured using a method described below, being equal to or less than 2.0 kV is used, method: ultraviolet rays having a main wavelength of 365 nm are radiated to the adhesive resin layer using a high-pressure mercury lamp in an environment of 25°C at a radiation intensity of 100 mW/cm 2 and an ultraviolet amount of 1,080 mJ/cm 2, thereby photocuring the adhesive resin layer, and then a voltage is applied to a surface of the adhesive layer for 30 seconds under conditions of an applied voltage of 10 kV, a distance between a specimen and electrodes of 20 mm, 25°C, and 50%RH, and the saturated electrostatic potential (V 1) of the surface of the adhesive resin layer is computed according to JIS L1094, and wherein a tack force of the surface of the adhesive resin layer after ultraviolet curing in step, which is measured using a method described below, is equal to or less than 0.1 N/cm 2, method: ultraviolet rays having a main wavelength of 365 nm are radiated to the adhesive resin layer using a high-pressure mercury lamp in an environment of 25°C at a radiation intensity of 100 mW/cm 2 and an ultraviolet amount of 1,080 mJ/cm 2, thereby photocuring the adhesive resin layer, and then the tack force of the surface of the adhesive resin layer is measured using a method in which, using a probe tack tester as a measurement instrument, a probe having a diameter of 5 mm and the surface of the adhesive resin layer are brought into contact with each other at a rate of 10 mm/second and held in contact with each other at a contact load of 0.98 N/cm 2 for 10 seconds, and then the probe is peeled off from the surface of the adhesive resin layer in a vertical direction at a rate of 10 mm/second.