A method of manufacturing a semiconductor light-emitting device, the method comprising: forming a semiconductor structure by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; forming at least one contact hole from the second semiconductor layer to the first semiconductor layer, the at least one contact hole having an inclined and stepped side surface; coating a passivation layer on the second semiconductor layer and the at least one contact hole; exposing a portion of the first semiconductor layer by removing a portion of the passivation layer located on a bottom of the at least one contact hole; forming a first electrode layer on the exposed portion of the first semiconductor layer; removing a portion of the passivation layer other than a portion that surrounds the first electrode layer on the second semiconductor layer; and forming a second electrode layer on an area of the second semiconductor layer exposed by the removing the portion of the passivation layer; coating an insulating layer on entire top surfaces of the first electrode layer, the second electrode layer, and the passivation layer; removing a portion of the insulating layer where the first electrode layer and the second electrode layer are located; forming a first electrode pad and a second electrode pad by plating a first electrode region through which the first electrode layer is exposed by the removing the portion of the insulating layer and a second electrode region through which the second electrode layer is exposed by the removing the portion of the insulating layer; forming an insulating barrier by filling an insulating material in a boundary region between the first electrode pad and the second electrode pad; planarizing top surfaces of the first electrode pad, the second electrode pad, and the insulating barrier by performing chemical mechanical polishing; and removing the substrate. forming a semiconductor structure by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; forming at least one contact hole from the second semiconductor layer to the first semiconductor layer, the at least one contact hole having an inclined and stepped side surface; coating a passivation layer on the second semiconductor layer and the at least one contact hole; exposing a portion of the first semiconductor layer by removing a portion of the passivation layer located on a bottom of the at least one contact hole; forming a first electrode layer on the exposed portion of the first semiconductor layer; removing a portion of the passivation layer other than a portion that surrounds the first electrode layer on the second semiconductor layer; and forming a second electrode layer on an area of the second semiconductor layer exposed by the removing the portion of the passivation layer; coating an insulating layer on entire top surfaces of the first electrode layer, the second electrode layer, and the passivation layer; removing a portion of the insulating layer where the first electrode layer and the second electrode layer are located; forming a first electrode pad and a second electrode pad by plating a first electrode region through which the first electrode layer is exposed by the removing the portion of the insulating layer and a second electrode region through which the second electrode layer is exposed by the removing the portion of the insulating layer; forming an insulating barrier by filling an insulating material in a boundary region between the first electrode pad and the second electrode pad; planarizing top surfaces of the first electrode pad, the second electrode pad, and the insulating barrier by performing chemical mechanical polishing; and removing the substrate.