A light emitting device package comprising: a sub-mount having an upper surface and a lower surface, the upper surface including a first portion and a second portion, the first portion of the upper surface being recessed with respect to the second portion of the upper surface; a first-type electrode and a second-type electrode on the upper surface of the sub-mount; a light emitting device on the first portion of the upper surface of the sub-mount; and a zener diode arrangement electrically connected to the first-type electrode and the second-type electrode and located on the second portion of the upper surface of the sub-mount, a reflection plate disposed on portions of the first-type electrode and the second-type electrode at the first portion of the upper surface of the sub-mount; and characterized by: a lens on the sub-mount, the lens being disposed on the light emitting device, and in that the light emitting device comprises: a supporting layer disposed on the first-type electrode, wherein the supporting layer includes a reflection electrode, an anti-diffusion layer and a metal plate; a first electrode disposed on the supporting layer, wherein the first electrode is electrically connected to the first-type electrode through the supporting layer; a semiconductor light emitting structure disposed on the first electrode, wherein the semiconductor light emitting structure is electrically connected to the first electrode and comprises a light extraction structure; and a second electrode disposed on the semiconductor light emitting structure, wherein the second electrode is electrically connected to the semiconductor light emitting structure and, through a wire, to the second-type electrode. a sub-mount having an upper surface and a lower surface, the upper surface including a first portion and a second portion, the first portion of the upper surface being recessed with respect to the second portion of the upper surface; a first-type electrode and a second-type electrode on the upper surface of the sub-mount; a light emitting device on the first portion of the upper surface of the sub-mount; and a zener diode arrangement electrically connected to the first-type electrode and the second-type electrode and located on the second portion of the upper surface of the sub-mount, a reflection plate disposed on portions of the first-type electrode and the second-type electrode at the first portion of the upper surface of the sub-mount; and characterized by: a lens on the sub-mount, the lens being disposed on the light emitting device, and in that the light emitting device comprises: a supporting layer disposed on the first-type electrode, wherein the supporting layer includes a reflection electrode, an anti-diffusion layer and a metal plate; a first electrode disposed on the supporting layer, wherein the first electrode is electrically connected to the first-type electrode through the supporting layer; a semiconductor light emitting structure disposed on the first electrode, wherein the semiconductor light emitting structure is electrically connected to the first electrode and comprises a light extraction structure; and a second electrode disposed on the semiconductor light emitting structure, wherein the second electrode is electrically connected to the semiconductor light emitting structure and, through a wire, to the second-type electrode. a lens on the sub-mount, the lens being disposed on the light emitting device, and in that the light emitting device comprises: a supporting layer disposed on the first-type electrode, wherein the supporting layer includes a reflection electrode, an anti-diffusion layer and a metal plate; a first electrode disposed on the supporting layer, wherein the first electrode is electrically connected to the first-type electrode through the supporting layer; a semiconductor light emitting structure disposed on the first electrode, wherein the semiconductor light emitting structure is electrically connected to the first electrode and comprises a light extraction structure; and a second electrode disposed on the semiconductor light emitting structure, wherein the second electrode is electrically connected to the semiconductor light emitting structure and, through a wire, to the second-type electrode. a supporting layer disposed on the first-type electrode, wherein the supporting layer includes a reflection electrode, an anti-diffusion layer and a metal plate; a first electrode disposed on the supporting layer, wherein the first electrode is electrically connected to the first-type electrode through the supporting layer; a semiconductor light emitting structure disposed on the first electrode, wherein the semiconductor light emitting structure is electrically connected to the first electrode and comprises a light extraction structure; and a second electrode disposed on the semiconductor light emitting structure, wherein the second electrode is electrically connected to the semiconductor light emitting structure and, through a wire, to the second-type electrode.