A light emitting device comprising: a substrate; a plurality of convex portions (107, 108) protruding from a flat top surface of the substrate; a first conductivity type semiconductor layer on the substrate; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; and a transmissive electrode layer on the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer has a discontinuous lower surface, wherein the convex portion (107, 108) includes a material a same as a material of the substrate, wherein the lower end of the convex portion is a point where the flat top surface of the substrate starts, wherein the substrate includes a sapphire material, wherein a plurality of dislocations is transferred through the first semiconductor layer, the active layer and the second conductivity type semiconductor layer, wherein the dislocations are formed in a vertical direction by the vertex region of the convex portion (107, 108) for preventing from a current concentration on a leakage path, wherein the first conductivity type semiconductor layer includes the plurality of dislocations having an interval greater than an interval between the convex portions, and wherein the dislocations do not exist at a region corresponding to the curved surface except for the vertex region of the convex portion, wherein the dislocations are linearly formed on the vertex region, wherein the transmissive electrode layer has a plurality of holes on the second conductivity type semiconductor layer, wherein each hole has a width narrower than a width of each convex portion (107, 108), wherein at least one of the dislocations extends to a surface of the second conductivity typ semiconductor layer, and wherein the dislocation is formed in a position vertically overlapping with the lower portion of the hole, characterised in that a circumferential surface of each convex portion includes a continuously rounded surface, and a height difference B of the rounded surface of the convex portion is calculated by a following equation, B = R × 1 − cos C / 2 / R in which the R represents a radius of a circle having the rounded surface, the C represents a length of a chord of the rounded surface, and the B represents a height difference between a virtual line linking a vertex of the convex portion with a lower end of the convex portion and the rounded surface. a substrate; a plurality of convex portions (107, 108) protruding from a flat top surface of the substrate; a first conductivity type semiconductor layer on the substrate; an active layer on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer on the active layer; and a transmissive electrode layer on the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer has a discontinuous lower surface, wherein the convex portion (107, 108) includes a material a same as a material of the substrate, wherein the lower end of the convex portion is a point where the flat top surface of the substrate starts, wherein the substrate includes a sapphire material, wherein a plurality of dislocations is transferred through the first semiconductor layer, the active layer and the second conductivity type semiconductor layer, wherein the dislocations are formed in a vertical direction by the vertex region of the convex portion (107, 108) for preventing from a current concentration on a leakage path, wherein the first conductivity type semiconductor layer includes the plurality of dislocations having an interval greater than an interval between the convex portions, and wherein the dislocations do not exist at a region corresponding to the curved surface except for the vertex region of the convex portion, wherein the dislocations are linearly formed on the vertex region, wherein the transmissive electrode layer has a plurality of holes on the second conductivity type semiconductor layer, wherein each hole has a width narrower than a width of each convex portion (107, 108), wherein at least one of the dislocations extends to a surface of the second conductivity typ semiconductor layer, and