A semiconductor device comprising: an output transistor having a first terminal connected with a positive terminal (7, Vcc) of a power supply and a second terminal connected with an output terminal which is connected with a load; a drive circuit configured to receive a control signal and to drive a gate of the output transistor in response to the control signal; a short-circuit MOS transistor having a source connected with the output terminal and configured to receive the control signal and to_operate in response to the control signal; a first switching device connected between a drain of the short-circuit MOS transistor and a control terminal of the output transistor; and a control circuit, wherein the short-circuit MOS transistor is formed on a semiconductor substrate connected with the power supply, wherein the first switching device comprises: a first semiconductor region formed in the semiconductor substrate; a first diffusion layer formed in the first semiconductor region and connected with the control terminal of the output transistor; a second diffusion layer formed in the first semiconductor region and connected with the drain of the short-circuit MOS transistor, and a gate electrode provided to oppose to a region between the first diffusion layer and the second diffusion layer in the first semiconductor region, wherein the gate electrode and the second diffusion layer are connected with the drain of the short-circuit MOS transistor, wherein the first switching device is turned on or off based on a voltage of the first semiconductor region, and wherein the control circuit is formed to control the voltage of the first semiconductor region in response to the control signal (S CTRL), and comprises: a load resistance connected between the output terminal and a connection node which is connected with the first semiconductor region; and a second switching device connected between the connection node and the ground terminal and configured to receive the control signal (S CTRL) and to turn on or off in response to the control signal (S CTRL). an output transistor having a first terminal connected with a positive terminal (7, Vcc) of a power supply and a second terminal connected with an output terminal which is connected with a load; a drive circuit configured to receive a control signal and to drive a gate of the output transistor in response to the control signal; a short-circuit MOS transistor having a source connected with the output terminal and configured to receive the control signal and to_operate in response to the control signal; a first switching device connected between a drain of the short-circuit MOS transistor and a control terminal of the output transistor; and a control circuit, wherein the short-circuit MOS transistor is formed on a semiconductor substrate connected with the power supply, wherein the first switching device comprises: a first semiconductor region formed in the semiconductor substrate; a first diffusion layer formed in the first semiconductor region and connected with the control terminal of the output transistor; a second diffusion layer formed in the first semiconductor region and connected with the drain of the short-circuit MOS transistor, and a gate electrode provided to oppose to a region between the first diffusion layer and the second diffusion layer in the first semiconductor region, a first semiconductor region formed in the semiconductor substrate; a first diffusion layer formed in the first semiconductor region and connected with the control terminal of the output transistor; a second diffusion layer formed in the first semiconductor region and connected with the drain of the short-circuit MOS transistor, and a gate electrode provided to oppose to a region between the first diffusion layer and the second diffusion layer in the first semiconductor region, wherein the gate electrode and the second diffusion layer are connected with the drain of the short-circuit MOS transistor, wherein the first switching device is turned on or off based on a voltage of the first semiconductor region, and wherein the control circuit is formed to control the voltage of the first semiconductor region in response to the control signal (S CTRL), and comprises: a load resistance connected between the output terminal and a connection node which is connected with the first semiconductor region; and a second switching device connected between the connection node and the ground terminal and configured to receive the control signal (S CTRL) and to turn on or off in response to the control signal (S CTRL). a load resistance connected between the output terminal and a connection node which is connected with the first semiconductor region; and a second switching device connected between the connection node and the ground terminal and configured to receive the control signal (S CTRL) and to turn on or off in response to the control signal (S CTRL).