A solid-state imaging element comprising a pixel including: a first imaging element; a second imaging element; a first transfer transistor (TR2 trs), a first reset transistor (TR2 rst), and a first selection transistor (TR2 sel) electrically connected to the second imaging element; a third imaging element; a second transfer transistor (TR3 trs), a second reset transistor (TR3 rst), and a second selection transistor (TR3 sel) electrically connected to the third imaging element; and an on-chip micro lens, wherein the first imaging element includes a first electrode, a second electrode, a third electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and an insulating layer, the second electrode facing the first and third electrodes, and the third electrode being located apart from the first electrode and facing the photoelectric conversion layer via the insulating layer, characterised in that the pixel further includes: a third electrode control line (V OA) connected to the third electrode; and a plurality of control lines connected to the first transfer transistor (TR2 trs), the first reset transistor (TR2 rst), the first selection transistor (TR2 sel), the second transfer transistor (TR3 trs), the second reset transistor (TR3 rst), and the second selection transistor (TR3 sel), and different from the third electrode control line (V OA), and in the pixel, in a plan view, a distance between a center of the on-chip micro lens included in the pixel and any one of the plurality of control lines included in the pixel is shorter than a distance between the center of the on-chip micro lens included in the pixel and the third electrode control line (V OA) included in the pixel. a first imaging element; a second imaging element; a first transfer transistor (TR2 trs), a first reset transistor (TR2 rst), and a first selection transistor (TR2 sel) electrically connected to the second imaging element; a third imaging element; a second transfer transistor (TR3 trs), a second reset transistor (TR3 rst), and a second selection transistor (TR3 sel) electrically connected to the third imaging element; and an on-chip micro lens, wherein the first imaging element includes a first electrode, a second electrode, a third electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and an insulating layer, the second electrode facing the first and third electrodes, and the third electrode being located apart from the first electrode and facing the photoelectric conversion layer via the insulating layer, characterised in that the pixel further includes: a third electrode control line (V OA) connected to the third electrode; and a plurality of control lines connected to the first transfer transistor (TR2 trs), the first reset transistor (TR2 rst), the first selection transistor (TR2 sel), the second transfer transistor (TR3 trs), the second reset transistor (TR3 rst), and the second selection transistor (TR3 sel), and different from the third electrode control line (V OA), and in the pixel, in a plan view, a distance between a center of the on-chip micro lens included in the pixel and any one of the plurality of control lines included in the pixel is shorter than a distance between the center of the on-chip micro lens included in the pixel and the third electrode control line (V OA) included in the pixel. a third electrode control line (V OA) connected to the third electrode; and a plurality of control lines connected to the first transfer transistor (TR2 trs), the first reset transistor (TR2 rst), the first selection transistor (TR2 sel), the second transfer transistor (TR3 trs), the second reset transistor (TR3 rst), and the second selection transistor (TR3 sel), and different from the third electrode control line (V OA), and in the pixel, in a plan view, a distance between a center of the on-chip micro lens included in the pixel and any one of the plurality of control lines included in the pixel is shorter than a distance between the center of the on-chip micro lens included in the pixel and the third electrode control line (V OA) included in the pixel.