A capacitor structure comprising: - a silicon substrate with a first side and an opposite second side, - a Metal Insulator Metal trench capacitor including: ∘ a basis electrode, forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side, the basis electrode coupled to the substrate, ∘ a first insulator layer stacked on the basis electrode in the trench, ∘ an second conductive layer stacked on the first insulator layer in the trench, wherein a second pad and a fourth pad are coupled to the basis electrode, wherein the second pad is located on the first side of the silicon substrate and the fourth pad is located on the opposite second side of the silicon substrate, and wherein a first pad and a third pad are coupled together and insulated on one hand from the silicon substrate and on the other hand from the second pad and the fourth pad, the first pad being located on the first side of the silicon substrate, the third pad being located on the opposite second side of the silicon substrate, the third pad being coupled to the second conductive layer, characterized in that, the trench capacitor is a double Metal Insulator Metal trench capacitor including: o a second insulator layer stacked on the second conductive layer in the trench, and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode, wherein said second conductive layer protrudes from said opposite second side of the silicon substrate. - a silicon substrate with a first side and an opposite second side, - a Metal Insulator Metal trench capacitor including: ∘ a basis electrode, forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side, the basis electrode coupled to the substrate, ∘ a first insulator layer stacked on the basis electrode in the trench, ∘ an second conductive layer stacked on the first insulator layer in the trench, ∘ a basis electrode, forming a first conductive layer, sunk in a trench etched in the semiconductor substrate from the first side, the basis electrode coupled to the substrate, ∘ a first insulator layer stacked on the basis electrode in the trench, ∘ an second conductive layer stacked on the first insulator layer in the trench, wherein a second pad and a fourth pad are coupled to the basis electrode, wherein the second pad is located on the first side of the silicon substrate and the fourth pad is located on the opposite second side of the silicon substrate, and wherein a first pad and a third pad are coupled together and insulated on one hand from the silicon substrate and on the other hand from the second pad and the fourth pad, the first pad being located on the first side of the silicon substrate, the third pad being located on the opposite second side of the silicon substrate, the third pad being coupled to the second conductive layer, characterized in that, the trench capacitor is a double Metal Insulator Metal trench capacitor including: o a second insulator layer stacked on the second conductive layer in the trench, and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode, wherein said second conductive layer protrudes from said opposite second side of the silicon substrate. o a second insulator layer stacked on the second conductive layer in the trench, and o a third conductive layer stacked on the second insulator layer in the trench and coupled to the basis electrode, wherein