A memory, comprising a storage area, wherein the storage area comprises several storage units disposed on a substrate; each storage unit comprises a transistor disposed on the substrate and a magnetic tunnel junction, MTJ, storage element electrically connected to the transistor; the MTJ storage element comprises a bottom electrode, a top electrode, and an MTJ located between the two, and the bottom electrode is electrically connected to a drain electrode of the transistor by using a conduction structure; a plurality of wiring layers are disposed between the transistor and the MTJ storage element in the storage area, and a dielectric layer is filled between adjacent wiring layers; the conduction structure comprises a first conduction part, and the first conduction part comprises a first metal wire, a second metal wire, and a first via hole located between the first metal wire and the second metal wire; the plurality of wiring layers comprise a first wiring layer, a second wiring layer, and a third wiring layer, and the third wiring layer is disposed between the first wiring layer and the second wiring layer; the first wiring layer comprises the first metal wire, the second wiring layer comprises the second metal wire, and the first via hole penetrates a dielectric layer and the third wiring layer that are located between the first wiring layer and the second wiring layer; and a first connection passage is disposed in the first via hole, the first connection passage is directly connected to the first metal wire and the second metal wire, and the first connection passage is not directly connected to a metal wire at the third wiring layer, wherein the second via hole is disposed in the storage area, and the second via hole penetrates the third wiring layer; and the first via hole is adjacent to the second via hole, and no metal wire exists on a part that is of the third wiring layer and that is located between the first via hole and the second via hole.. the MTJ storage element comprises a bottom electrode, a top electrode, and an MTJ located between the two, and the bottom electrode is electrically connected to a drain electrode of the transistor by using a conduction structure; a plurality of wiring layers are disposed between the transistor and the MTJ storage element in the storage area, and a dielectric layer is filled between adjacent wiring layers; the conduction structure comprises a first conduction part, and the first conduction part comprises a first metal wire, a second metal wire, and a first via hole located between the first metal wire and the second metal wire; the plurality of wiring layers comprise a first wiring layer, a second wiring layer, and a third wiring layer, and the third wiring layer is disposed between the first wiring layer and the second wiring layer; the first wiring layer comprises the first metal wire, the second wiring layer comprises the second metal wire, and the first via hole penetrates a dielectric layer and the third wiring layer that are located between the first wiring layer and the second wiring layer; and a first connection passage is disposed in the first via hole, the first connection passage is directly connected to the first metal wire and the second metal wire, and the first connection passage is not directly connected to a metal wire at the third wiring layer, wherein the second via hole is disposed in the storage area, and the second via hole penetrates the third wiring layer; and the first via hole is adjacent to the second via hole, and no metal wire exists on a part that is of the third wiring layer and that is located between the first via hole and the second via hole..