A control device for controlling a power semiconductor device, the control device comprising: a primary side control unit for receiving a control signal from a superordinated controller and for generating a binary primary side switching signal (s 1,p) for the power semiconductor device; a secondary side control unit for generating a gate signal for the power semiconductor device; a transformer for transferring electrical energy from the primary side control unit to the secondary side control unit and for transferring the primary side switching signal (s 1,p) from the primary side control unit to the secondary side control unit; wherein the primary side control unit comprises a voltage modulation unit for modulating an input voltage (v p) of the transformer, such that the primary side switching signal (s 1,p) is encoded into the input voltage (v p); wherein the input voltage (v p) is a signal sequence comprising rising edges encoding a first value of the primary side switching signal (s 1,p) and falling edges encoding a second value of the primary side switching signal (si,p); wherein the secondary side control unit comprises a power supply unit for providing electrical power from an output voltage (v s) of the transformer for supplying the secondary side control unit; wherein the secondary side control unit comprises a voltage decoder unit for extracting a secondary side switching signal (s 1,s) from the output voltage (v s) by detecting the rising edges and the falling edges in the output voltage (v s) and for generating the gate signal from the secondary side switching signal (si,s); wherein the secondary side control unit comprises a load modulation unit for modulating a load on a secondary side of the transformer, such that a secondary side signal (s 3,s, s 4,s) is encoded into a secondary side transformer current (i s); wherein the primary side control unit comprises a current decoder unit for extracting the secondary side signal (s 3,s, s 4,s) from a primary side transformer current (i p); wherein a first value of the secondary side signal (s 3,s, s 4,s) is encoded by disconnecting a resistive load from the transformer and a second value is encoded by connecting the resistive load to the transformer; wherein, for encoding an error signal, a first value of the secondary side signal (s 3,s, s 4,s) is encoded by opening a short-circuit switch and a second value is encoded by closing the short-circuit switch. a primary side control unit for receiving a control signal from a superordinated controller and for generating a binary primary side switching signal (s 1,p) for the power semiconductor device; a secondary side control unit for generating a gate signal for the power semiconductor device; a transformer for transferring electrical energy from the primary side control unit to the secondary side control unit and for transferring the primary side switching signal (s 1,p) from the primary side control unit to the secondary side control unit; wherein the primary side control unit comprises a voltage modulation unit for modulating an input voltage (v p) of the transformer, such that the primary side switching signal (s 1,p) is encoded into the input voltage (v p); wherein the input voltage (v p) is a signal sequence comprising rising edges encoding a first value of the primary side switching signal (s 1,p) and falling edges encoding a second value of the primary side switching signal (si,p); wherein the secondary side control unit comprises a power supply unit for providing electrical power from an output voltage (v s) of the transformer for supplying the secondary side control unit; wherein the secondary side control unit comprises a voltage decoder unit for extracting a secondary side switching signal (s 1,s) from the output voltage (v s) by detecting the rising edges and the falling edges in the output voltage (v s) and for generating the gate signal from the secondary side switching signal (si,s); wherein the secondary side control unit comprises a load modulation unit for modulating a load on a secondary side of the transformer, such that a secondary side signal (s 3,s, s 4,s) is encoded into a secondary side transformer current (i s); wherein the primary side control unit comprises a current decoder unit for extracting the secondary side signal (s 3,s, s 4,s) from a primary side transformer current (i p); wherein a first value of the secondary side signal (s 3,s, s 4,s) is encoded by disconnecting a resistive load from the transformer and a second value is encoded by connecting the resistive load to the transformer; wherein, for encoding an error signal, a first value of the secondary side signal (s 3,s, s 4,s) is encoded by opening a short-circuit switch and a second value is encoded by closing the short-circuit switch.