Electrically pumped optoelectronic semiconductor chip having - at least two radiation-active quantum wells, which comprise InGaN or consist thereof, and - at least two cover layers, which comprise AlGaN or consist thereof, wherein - each of the cover layers is assigned to precisely one of the radiation-active quantum wells, - the cover layers are each located on a p-side of the radiation-active quantum wells, and - the distance between the radiation-active quantum wells and the associated cover layers amounts to at most 1.5 nm, - a layer sequence is repeated between three times and twenty times inclusive, - adjacent layer sequences succeed one another directly, - the layer sequence consists of layers succeeding one another directly in the order listed: - the radiation-active quantum well, - an interlayer with or of GaN, - the cover layer and - a barrier layer, which comprises GaN or consists thereof, wherein furthermore - the average thickness of the cover layers is between 0.3 nm and 1.5 nm inclusive and the interlayers have a thickness of between 0.3 nm and 1.2 nm inclusive and the distance between two cover layers succeeding one another in the direction of growth amounts to between 3 nm and 8 nm inclusive, - the average band gap of the interlayers amounts in each case to at least 120 % of the average band gap of the associated radiation-active quantum well, - the average band gap in a region outside the radiation-active quantum wells, which in each case directly adjoins the p-side of the associated quantum well, is greater than in a corresponding region on an n-side of the corresponding radiation-active quantum well, and - as a result of the cover layers, the structures of the conduction band and of the valence band of a semiconductor material of the semiconductor chip are deformed, such that negative charge carriers experience a higher barrier whereas the conduction of positive charge carriers is promoted. - at least two radiation-active quantum wells, which comprise InGaN or consist thereof, and - at least two cover layers, which comprise AlGaN or consist thereof, - each of the cover layers is assigned to precisely one of the radiation-active quantum wells, - the cover layers are each located on a p-side of the radiation-active quantum wells, and - the distance between the radiation-active quantum wells and the associated cover layers amounts to at most 1.5 nm, - a layer sequence is repeated between three times and twenty times inclusive, - adjacent layer sequences succeed one another directly, - the layer sequence consists of layers succeeding one another directly in the order listed: - the radiation-active quantum well, - an interlayer with or of GaN, - the cover layer and - a barrier layer, which comprises GaN or consists thereof, - the average thickness of the cover layers is between 0.3 nm and 1.5 nm inclusive and the interlayers have a thickness of between 0.3 nm and 1.2 nm inclusive and the distance between two cover layers succeeding one another in the direction of growth amounts to between 3 nm and 8 nm inclusive, - the average band gap of the interlayers amounts in each case to at least 120 % of the average band gap of the associated radiation-active quantum well, - the average band gap in a region outside the radiation-active quantum wells, which in each case directly adjoins the p-side of the associated quantum well, is greater than in a corresponding region on an n-side of the corresponding radiation-active quantum well, and - as a result of the cover layers, the structures of the conduction band and of the valence band of a semiconductor material of the semiconductor chip are deformed, such that negative charge carriers experience a higher barrier whereas the conduction of positive charge carriers is promoted.