A high-voltage output driver for a sensor device with reverse current blocking, comprising: - a supply node to apply a supply voltage, - an output node to provide an output signal of the high-voltage output driver, - a driver transistor being disposed between the supply node and the output node, - a bulk control circuit to apply a bulk control voltage (Vwell) to a bulk node of the driver transistor, - a gate control circuit to apply a gate control voltage to the gate node of the driver transistor, - wherein the high-voltage output driver is operated in a first operation mode in which the potential at the output node is lower than the supply voltage, and in a second operation mode in which the potential at the output node is higher than the supply voltage, - wherein the bulk control circuit is configured to apply the level of a bulk control voltage (Vwell) to the bulk node of the driver transistor in dependence on operating the high-voltage output driver in the first and second operation mode, - wherein the high-voltage output driver comprises a detection circuit being configured to sense the bulk control voltage (Vwell) to detect the first and the second operation mode of the high-voltage output driver, the detection circuit being arranged, during the first operation mode, to enable pulling up of the potential at the gate node of the driver transistor to the supply voltage and, during the second operation mode, to allow pulling up of the potential at the gate node of the driver transistor to the potential at the output node by disabling pulling up of the potential at the gate node of the driver transistor to the supply voltage in response to the detection of the first and second operation mode. - a supply node to apply a supply voltage, - an output node to provide an output signal of the high-voltage output driver, - a driver transistor being disposed between the supply node and the output node, - a bulk control circuit to apply a bulk control voltage (Vwell) to a bulk node of the driver transistor, - a gate control circuit to apply a gate control voltage to the gate node of the driver transistor, - wherein the high-voltage output driver is operated in a first operation mode in which the potential at the output node is lower than the supply voltage, and in a second operation mode in which the potential at the output node is higher than the supply voltage, - wherein the bulk control circuit is configured to apply the level of a bulk control voltage (Vwell) to the bulk node of the driver transistor in dependence on operating the high-voltage output driver in the first and second operation mode, - wherein the high-voltage output driver comprises a detection circuit being configured to sense the bulk control voltage (Vwell) to detect the first and the second operation mode of the high-voltage output driver, the detection circuit being arranged, during the first operation mode, to enable pulling up of the potential at the gate node of the driver transistor to the supply voltage and, during the second operation mode, to allow pulling up of the potential at the gate node of the driver transistor to the potential at the output node by disabling pulling up of the potential at the gate node of the driver transistor to the supply voltage in response to the detection of the first and second operation mode.