A method for manufacturing a thin-film transistor, comprising: forming an active layer using low temperature poly-silicon (LTPS), wherein the active layer comprises a first doping region and a second doping region;; forming a first etch stopper and a second etch stopper respectively over the first doping region and the second doping region, thicknesses of the first etch stopper and the second etch stopper each being between 200 Å and 400 Å; forming a second layer over the active layer and the at least one etch stopper (11,12); forming at least one contact via (51, 52) in the second layer, such that a bottom opening of each contact via (51, 52) contacts with a top surface of one etch stopper (11,12); and forming at least one electrode (21,22) in the at least one contact via (51, 52), such that each electrode (21,22) extends in one contact via (51, 52) respectively, and is in contact with, and electrically coupled with, the one etch stopper (11,12); wherein: the at least one etch stopper (11,12) comprises a composition capable of blocking etching to the active layer during formation of the at least one contact via (51, 52) in the second layer; and whose oxidization product is removable by a solution, the composition comprising molybdenum; wherein, each electrode is formed into an N-layer structure, where N is an integer greater than 1; neighboring layers of each electrode are made of different compositions; a contact layer of each electrode, in contact with and electrically coupled to, one etch stopper (11,12), is made of a same composition as the one etch stopper (11,12), and where forming the active layer using low temperature poly-silicon (LTPS) further comprises: performing injective excitation on the active layer to improve the lattice state of the low temperature poly-silicon in the active layer to thereby improve the conductivity of the active layer. forming an active layer using low temperature poly-silicon (LTPS), wherein the active layer comprises a first doping region and a second doping region;; forming a first etch stopper and a second etch stopper respectively over the first doping region and the second doping region, thicknesses of the first etch stopper and the second etch stopper each being between 200 Å and 400 Å; forming a second layer over the active layer and the at least one etch stopper (11,12); forming at least one contact via (51, 52) in the second layer, such that a bottom opening of each contact via (51, 52) contacts with a top surface of one etch stopper (11,12); and forming at least one electrode (21,22) in the at least one contact via (51, 52), such that each electrode (21,22) extends in one contact via (51, 52) respectively, and is in contact with, and electrically coupled with, the one etch stopper (11,12); wherein: the at least one etch stopper (11,12) comprises a composition capable of blocking etching to the active layer during formation of the at least one contact via (51, 52) in the second layer; and whose oxidization product is removable by a solution, the composition comprising molybdenum; wherein, each electrode is formed into an N-layer structure, where N is an integer greater than 1; neighboring layers of each electrode are made of different compositions; a contact layer of each electrode, in contact with and electrically coupled to, one etch stopper (11,12), is made of a same composition as the one etch stopper (11,12), and where forming the active layer using low temperature poly-silicon (LTPS) further comprises: performing injective excitation on the active layer to improve the lattice state of the low temperature poly-silicon in the active layer to thereby improve the conductivity of the active layer.