Electronic device (500, 500') comprising: - a first electrode; - a second electrode; - a solid electrolyte based on an ionic conductor material, said first and second electrodes being respectively arranged on either side of said electrolyte, said first and second electrodes being configured to form at least one metallic dendrite between said first electrode and said second electrode from metal ions circulating in said electrolyte when a potential difference greater than or equal to a first positive threshold voltage (Vthon) is applied between said first electrode and said second electrode; said device having two resistive states: - a high resistance state, referred to as high resistive state; - a low resistance state, referred to as low resistive state; - said device being characterised in that the concentration of the metal forming the metal ions in said electrolyte is chosen in such a way that: - said device remains at the high resistive state as long as said first threshold voltage (Vthon) between said first electrode and said second electrode is not reached; - said device switches from the high resistive state to the low resistive state when the potential difference between said first electrode and said second electrode is greater than or equal to said first threshold voltage (Vthon); - said device switches from the low resistive state to the high resistive state when the potential difference between said first electrode and said second electrode greater than or equal to said first threshold voltage is no longer applied and reaches by decreasing a second positive threshold voltage (Vthoff) strictly less than said first threshold voltage (Vthon). - a first electrode; - a second electrode; - a solid electrolyte based on an ionic conductor material, said first and second electrodes being respectively arranged on either side of said electrolyte, said first and second electrodes being configured to form at least one metallic dendrite between said first electrode and said second electrode from metal ions circulating in said electrolyte when a potential difference greater than or equal to a first positive threshold voltage (Vthon) is applied between said first electrode and said second electrode; - a high resistance state, referred to as high resistive state; - a low resistance state, referred to as low resistive state; - said device being characterised in that the concentration of the metal forming the metal ions in said electrolyte is chosen in such a way that: - said device remains at the high resistive state as long as said first threshold voltage (Vthon) between said first electrode and said second electrode is not reached; - said device switches from the high resistive state to the low resistive state when the potential difference between said first electrode and said second electrode is greater than or equal to said first threshold voltage (Vthon); - said device switches from the low resistive state to the high resistive state when the potential difference between said first electrode and said second electrode greater than or equal to said first threshold voltage is no longer applied and reaches by decreasing a second positive threshold voltage (Vthoff) strictly less than said first threshold voltage (Vthon). - said device remains at the high resistive state as long as said first threshold voltage (Vthon) between said first electrode and said second electrode is not reached; - said device switches from the high resistive state to the low resistive state when the potential difference between said first electrode and said second electrode is greater than or equal to said first threshold voltage (Vthon); - said device switches from the low resistive state to the high resistive state when the potential difference between said first electrode and said second electrode greater than or equal to said first threshold voltage is no longer applied and reaches by decreasing a second positive threshold voltage (Vthoff) strictly less than said first threshold voltage (Vthon).