A Metal-Insulator-Metal type capacitor structure comprising: - a substrate, - a first electrically insulating layer disposed on the substrate, - a lower electrode disposed on the first electrically insulating layer, - a metal layer disposed on the lower electrode and structured in that it includes a plurality of pores, said pores being electrically insulated from the rest of the structured metal layer in which they are made by an electrically insulating peripheral oxide layer, said electrically insulating peripheral oxide layer constituting an insulating matrix of pores obtained by anodic etching or by anodization, - a Metal-Insulator-Metal type capacitor (4; 41) comprising a first conductive layer disposed on the structured metal layer and inside the pores of said structured metal layer, a dielectric layer covering the first conductive layer, a second conductive layer covering the dielectric layer, each concerned pore including the first conductive layer and the second conductive layer separated by the dielectric layer, - an upper electrode disposed on the Metal-Insulator-Metal type capacitor, - a second insulating layer electrically disposed on the upper electrode, in which: - the first conductive layer located inside the pores of the structured metal layer is in contact with the lower electrode, - the second conductive layer located inside the pores of the structured metal layer is in contact with the upper electrode, and - the lower electrode comprises a metal layer and an etching barrier layer, said etching barrier layer being resistant to etching by anodization and being located between the metal layer of the lower electrode and the insulating pore matrix. - a substrate, - a first electrically insulating layer disposed on the substrate, - a lower electrode disposed on the first electrically insulating layer, - a metal layer disposed on the lower electrode and structured in that it includes a plurality of pores, said pores being electrically insulated from the rest of the structured metal layer in which they are made by an electrically insulating peripheral oxide layer, said electrically insulating peripheral oxide layer constituting an insulating matrix of pores obtained by anodic etching or by anodization, - a Metal-Insulator-Metal type capacitor (4; 41) comprising a first conductive layer disposed on the structured metal layer and inside the pores of said structured metal layer, a dielectric layer covering the first conductive layer, a second conductive layer covering the dielectric layer, each concerned pore including the first conductive layer and the second conductive layer separated by the dielectric layer, - an upper electrode disposed on the Metal-Insulator-Metal type capacitor, - a second insulating layer electrically disposed on the upper electrode, - the first conductive layer located inside the pores of the structured metal layer is in contact with the lower electrode, - the second conductive layer located inside the pores of the structured metal layer is in contact with the upper electrode, and - the lower electrode comprises a metal layer and an etching barrier layer, said etching barrier layer being resistant to etching by anodization and being located between the metal layer of the lower electrode and the insulating pore matrix.