A device for detecting the polarity of an alternately positive and negative so-called "detected" current or of an alternately positive or negative so-called "detected" voltage, said detection device being able to indicate the polarity of said detected current or of said detected voltage, the detection device comprising: - a circuit portion provided with a so-called "detection" node (N 1) configured to produce at said detection node a so-called "measurement" voltage (V sense) image of a fraction of said detected current or of said detected voltage, - at least one detection circuit (30, 30', 50, 50', 70, 70 1, 70 2, 90) with transistor(s), coupled to said detection node (N 1), said at least one detection circuit being provided of one or more amplifier stage(s), at least one of said amplifier stages comprising a so-called "comparator" transistor (M 37, M 55, M' 37, M' 55, M 72) having a gate-source voltage which depends on said measurement voltage (V sense), said comparator transistor further having a source set at a fixed potential and a gate-source voltage which depends on said measurement voltage (V sense) or a gate set at a fixed potential (VGGbias) and a gate-source voltage which depends on said measurement voltage (V sense), the detection circuit further comprising a so-called "output" transistor (M 38, M 33, M' 38, M' 33, M 73) having a drain coupled to said output, said output transistor having a gate coupled to the drain of said comparator transistor (M 37, M 55, M' 37, M' 55, M 72), said detection circuit being configured to compare said measurement potential (V sense) with a determined threshold, and produce at the output a binary detection signal (OUTn, OUTp, OUT 1, OUT 2) indicative of the polarity of the detected current or of the detected voltage, said detection adopting a first state when said measurement voltage (V sense) is below the determined threshold and adopting a second state when said measurement voltage (V sense) is above the determined threshold, characterized in that said detection node (N 1) is coupled to the source of a so-called "input" transistor (M 36, M 54, M' 36, M' 54) of said detection circuit (30, 50) or to the source of the comparator transistor (M 55), and in that the input transistor, said comparator transistor (M 37, M 55, M' 37, M' 55, M 72), and said output transistor (M 38, M 53, M' 38, M' 53, M 73) of said detection circuit are of the N type and normally blocked. - a circuit portion provided with a so-called "detection" node (N 1) configured to produce at said detection node a so-called "measurement" voltage (V sense) image of a fraction of said detected current or of said detected voltage, - at least one detection circuit (30, 30', 50, 50', 70, 70 1, 70 2, 90) with transistor(s), coupled to said detection node (N 1), said at least one detection circuit being provided of one or more amplifier stage(s), at least one of said amplifier stages comprising a so-called "comparator" transistor (M 37, M 55, M' 37, M' 55, M 72) having a gate-source voltage which depends on said measurement voltage (V sense), said comparator transistor further having a source set at a fixed potential and a gate-source voltage which depends on said measurement voltage (V sense) or a gate set at a fixed potential (VGGbias) and a gate-source voltage which depends on said measurement voltage (V sense), the detection circuit further comprising a so-called "output" transistor (M 38, M 33, M' 38, M' 33, M 73) having a drain coupled to said output, said output transistor having a gate coupled to the drain of said comparator transistor (M 37, M 55, M' 37, M' 55, M 72), said detection circuit being configured to compare said measurement potential (V sense) with a determined threshold, and produce at the output a binary detection signal (OUTn, OUTp, OUT 1, OUT 2) indicative of the polarity of the detected current or of the detected voltage, said detection adopting a first state when said measurement voltage (V sense) is below the determined threshold and adopting a second state when said measurement voltage (V sense) is above the determined threshold, characterized in that said detection node (N 1) is coupled to the source of a so-called "input" transistor (M 36, M 54, M' 36, M' 54) of said detection circuit (30, 50) or to the source of the comparator transistor (M 55), and in that the input transistor, said comparator transistor (M 37, M 55, M' 37, M' 55, M 72), and said output transistor (M 38, M 53, M' 38, M' 53, M 73) of said detection circuit are of the N type and normally blocked.