A method of fabricating a semiconductor structure or device, comprising: bonding at least one seed structure at least substantially comprised by a single crystal of semiconductor material to a carrier substrate using a glass bonding layer disposed between said seed structure and said carrier substrate; selecting the carrier substrate to comprise a material that exhibits a coefficient of thermal expansion higher than a coefficient of thermal expansion exhibited by the single crystal of semiconductor material of the at least one seed structure; depositing at least one epitaxial layer of semiconductor material over the at least one seed structure at a temperature above a glass transition temperature of a glass material of the glass bonding layer while the at least one seed structure is supported on the glass bonding layer, the carrier substrate comprising a material that exhibits a coefficient of thermal expansion that is greater than the coefficients of thermal expansion of the at least one seed structure and the epitaxial layer of semiconductor material; cooling the at least one layer of semiconductor material, the at least one seed structure, the glass bonding layer, and the carrier substrate to room temperature after depositing the at least one layer of semiconductor material over the at least one seed structure; and compressively straining the single crystal of semiconductor material of the at least one seed structure using thermal contraction of the carrier substrate while cooling the at least one layer of semiconductor material, the at least one seed structure, the glass bonding layer, and the carrier substrate to room temperature from a temperature below the glass transition temperature of the glass material of the glass bonding layer. bonding at least one seed structure at least substantially comprised by a single crystal of semiconductor material to a carrier substrate using a glass bonding layer disposed between said seed structure and said carrier substrate; selecting the carrier substrate to comprise a material that exhibits a coefficient of thermal expansion higher than a coefficient of thermal expansion exhibited by the single crystal of semiconductor material of the at least one seed structure; depositing at least one epitaxial layer of semiconductor material over the at least one seed structure at a temperature above a glass transition temperature of a glass material of the glass bonding layer while the at least one seed structure is supported on the glass bonding layer, the carrier substrate comprising a material that exhibits a coefficient of thermal expansion that is greater than the coefficients of thermal expansion of the at least one seed structure and the epitaxial layer of semiconductor material; cooling the at least one layer of semiconductor material, the at least one seed structure, the glass bonding layer, and the carrier substrate to room temperature after depositing the at least one layer of semiconductor material over the at least one seed structure; and compressively straining the single crystal of semiconductor material of the at least one seed structure using thermal contraction of the carrier substrate while cooling the at least one layer of semiconductor material, the at least one seed structure, the glass bonding layer, and the carrier substrate to room temperature from a temperature below the glass transition temperature of the glass material of the glass bonding layer.