A data storage device comprising: solid-state memory components; and a controller operatively coupled with the solid-state memory components and comprising one or more processors configured to at least: identify (201, 501) one or more regions, of the solid-state memory components, that qualify to be relocated prior to the data storage device entering a data retention state, wherein the one or more regions are identified based on a determination that the one or more regions are more likely than other regions of the solid-state memory components to suffer from charge loss during periods of data retention, the determination being based on an error rate of the one or more regions relative to a threshold error rate; and prior to the data retention state: change one or more values of one or more write settings to one or more new values; with the one or more write settings changed to the one or more new values, relocate (205, 507) data from the one or more regions to one or more new regions; and after relocating the data, return (207, 509) the one or more new values, of the one or more write settings, to one or more earlier values, wherein the one or more write settings comprise a voltage setting, the one or more earlier values comprise an earlier voltage value, and the one or more new values comprise a new voltage value greater than the earlier voltage value. solid-state memory components; and a controller operatively coupled with the solid-state memory components and comprising one or more processors configured to at least: identify (201, 501) one or more regions, of the solid-state memory components, that qualify to be relocated prior to the data storage device entering a data retention state, wherein the one or more regions are identified based on a determination that the one or more regions are more likely than other regions of the solid-state memory components to suffer from charge loss during periods of data retention, the determination being based on an error rate of the one or more regions relative to a threshold error rate; and prior to the data retention state: change one or more values of one or more write settings to one or more new values; with the one or more write settings changed to the one or more new values, relocate (205, 507) data from the one or more regions to one or more new regions; and after relocating the data, return (207, 509) the one or more new values, of the one or more write settings, to one or more earlier values, wherein the one or more write settings comprise a voltage setting, the one or more earlier values comprise an earlier voltage value, and the one or more new values comprise a new voltage value greater than the earlier voltage value. identify (201, 501) one or more regions, of the solid-state memory components, that qualify to be relocated prior to the data storage device entering a data retention state, wherein the one or more regions are identified based on a determination that the one or more regions are more likely than other regions of the solid-state memory components to suffer from charge loss during periods of data retention, the determination being based on an error rate of the one or more regions relative to a threshold error rate; and prior to the data retention state: change one or more values of one or more write settings to one or more new values; with the one or more write settings changed to the one or more new values, relocate (205, 507) data from the one or more regions to one or more new regions; and after relocating the data, return (207, 509) the one or more new values, of the one or more write settings, to one or more earlier values, change one or more values of one or more write settings to one or more new values; with the one or more write settings changed to the one or more new values, relocate (205, 507) data from the one or more regions to one or more new regions; and after relocating the data, return (207, 509) the one or more new values, of the one or more write settings, to one or more earlier values, wherein the one or more write settings comprise a voltage setting, the one or more earlier values comprise an earlier voltage value, and the one or more new values comprise a new voltage value greater than the earlier voltage value.