A method for producing at least one light-emitting diode comprising: • a semiconductor stack formed of a first semiconductor layer, of a second semiconductor layer, and of an active layer located between the two semiconductor layers (11, 12), and • an extraction layer, made of a transparent dielectric material comprising nanoscale particles (6.1), extending in contact with the first semiconductor layer, o the method comprising the following step: o choosing the materials of the first semiconductor layer and of the active layer, and of the extraction layer; o the method being characterized in that it comprises the following steps: o determining a first non-zero distance (h 1s) between, on the one hand, emitting dipoles ( μ 1) associated with the radiative recombination of electron-hole pairs in the active layer and, on the other hand, the extraction layer, for which: • a lifetime (τ n,v) of the emitting dipoles ( μ 1), having a vertical orientation (θ v) along an axis orthogonal to the plane of the active layer, is longer than the lifetime (τ n,h) of the emitting dipoles ( μ 1) having a horizontal orientation (θ h) along an axis parallel to the plane of the active layer, - on the basis of a predetermined function (g h,v) expressing a change in a parameter representative of the lifetime of an emitting dipole ( μ 1) having a predefined orientation (θ h; θ v) according to its distance (h 1) from the extraction layer, taking into account optical properties (n 1, n 2) of said materials chosen; • optical dipoles ( μ 2) associated with the nanoscale particles (6.1) are located in the near field of the emitting dipoles ( μ 1), so as to allow non-radiative coupling of dipole-dipole type between the emitting dipoles ( μ 1) and the optical dipoles ( μ 2); o producing the light-emitting diode, a thickness of the first semiconductor layer being such that the emitting dipoles ( μ 1) are located at the first determined distance (h 1s) with respect to the extraction layer, the emitting dipoles ( μ 1) then being oriented orthogonally to the plane of the active layer. • a semiconductor stack formed of a first semiconductor layer, of a second semiconductor layer, and of an active layer located between the two semiconductor layers (11, 12), and • an extraction layer, made of a transparent dielectric material comprising nanoscale particles (6.1), extending in contact with the first semiconductor layer, o the method comprising the following step: o choosing the materials of the first semiconductor layer and of the active layer, and of the extraction layer; o the method being characterized in that it comprises the following steps: o determining a first non-zero distance (h 1s) between, on the one hand, emitting dipoles ( μ 1) associated with the radiative recombination of electron-hole pairs in the active layer and, on the other hand, the extraction layer, for which: o the method comprising the following step: o choosing the materials of the first semiconductor layer and of the active layer, and of the extraction layer; o choosing the materials of the first semiconductor layer and of the active layer, and of the extraction layer; o the method being characterized in that it comprises the following steps: o determining a first non-zero distance (h 1s) between, on the one hand, emitting dipoles ( μ 1) associated with the radiative recombination of electron-hole pairs in the active layer and, on the other hand, the extraction layer, for which: o determining a first non-zero distance (h 1s) between, on the one hand, emitting dipoles ( μ 1) associated with the radiative recombination of electron-hole pairs in the active layer and, on the other hand, the extraction layer, for which: • a lifetime (τ n,v) of the emitting dipoles ( μ 1), having a vertical orientation (θ v) along an axis orthogonal to the plane of the active layer, is longer than the lifetime (τ n,h) of the emitting dipoles ( μ 1) having a horizontal orientation (θ h) along an axis parallel to the plane of the active layer, - on the basis of a predetermined function (g h,v) expressing a change in a parameter representative of the lifetime of an emitting dipole ( μ 1) having a predefined orientation (θ h; θ v) according to its distance (h 1) from the extraction layer, taking into account optical properties (n 1, n 2) of said materials chosen; - on the basis of a predetermined function (g h,v) expressing a change in a parameter representative of the lifetime of an emitting dipole ( μ 1) having a predefined orientation (θ h; θ v) according to its distance (h 1) from the extraction layer, taking into account optical properties (n 1, n 2) of said materials chosen; • optical dipoles ( μ 2) associated with the nanoscale particles (6.1) are located in the near field of the emitting dipoles ( μ 1), so as to allow non-radiative coupling of dipole-dipole type between the emitting dipoles ( μ 1) and the optical dipoles ( μ 2); o producing the light-emitting diode, a thickness of the first semiconductor layer being such that the emitting dipoles ( μ 1) are located at the first determined distance (h 1s) with respect to the extraction layer, the emitting dipoles ( μ 1) then being oriented orthogonally to the plane of the active layer. o producing the light-emitting diode, a thickness of the first semiconductor layer being such that the emitting dipoles ( μ 1) are located at the first determined distance (h 1s) with respect to the extraction layer, the emitting dipoles ( μ 1) then being oriented orthogonally to the plane of the active layer.