A display device, comprising: a substrate including a display area and a non-display area; at least one transistor and a storage capacitor (Cst) provided in the display area of the substrate, wherein the transistor comprises at least a gate electrode; and a first interlayer insulating layer covering the transistor and a lower electrode of the storage capacitor (Cst); characterized by the lower electrode and the gate electrode lying on the same level in the display area; an upper electrode of the storage capacitor (Cst) and an initialization power supply line provided on the first interlayer insulating layer, wherein each of the upper electrode and the initialization power supply line has a single layer structure or multilayer structure including at least one of Au, Ag, Al, Mo, Cr, Ti, Ni, Md, Co, and an alloy thereof; a second interlayer insulating layer provided over the substrate where the upper electrode and the initialization power supply line are arranged; a first bridge pattern provided on the second interlayer insulating layer and connected to the transistor; a third interlayer insulating layer covering the first bridge pattern and including an organic insulating material; a second bridge pattern provided on the third interlayer insulating layer and connected to the first bridge pattern; and a display element (OLED) connected to the second bridge pattern, wherein the second bridge pattern comprises: a first conductive layer (CL1B) including at least a first sub-conductive layer; and a second conductive layer (CL2B) provided between the third interlayer insulating layer and the first conductive layer (CL1B), wherein the second conductive layer (CL2B) includes a metal nitride. a substrate including a display area and a non-display area; at least one transistor and a storage capacitor (Cst) provided in the display area of the substrate, wherein the transistor comprises at least a gate electrode; and a first interlayer insulating layer covering the transistor and a lower electrode of the storage capacitor (Cst); characterized by the lower electrode and the gate electrode lying on the same level in the display area; an upper electrode of the storage capacitor (Cst) and an initialization power supply line provided on the first interlayer insulating layer, wherein each of the upper electrode and the initialization power supply line has a single layer structure or multilayer structure including at least one of Au, Ag, Al, Mo, Cr, Ti, Ni, Md, Co, and an alloy thereof; a second interlayer insulating layer provided over the substrate where the upper electrode and the initialization power supply line are arranged; a first bridge pattern provided on the second interlayer insulating layer and connected to the transistor; a third interlayer insulating layer covering the first bridge pattern and including an organic insulating material; a second bridge pattern provided on the third interlayer insulating layer and connected to the first bridge pattern; and a display element (OLED) connected to the second bridge pattern, wherein the second bridge pattern comprises: a first conductive layer (CL1B) including at least a first sub-conductive layer; and a second conductive layer (CL2B) provided between the third interlayer insulating layer and the first conductive layer (CL1B), wherein the second conductive layer (CL2B) includes a metal nitride. a first conductive layer (CL1B) including at least a first sub-conductive layer; and a second conductive layer (CL2B) provided between the third interlayer insulating layer and the first conductive layer (CL1B), wherein the second conductive layer (CL2B) includes a metal nitride.