A method (100, 100') for co-manufacturing a ferroelectric memory comprising a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode and an OxRAM resistive memory comprising a first electrode, a second electrode and a layer of hafnium dioxide-based active material disposed between the first electrode and the second electrode, the co-manufacturing method including the following steps: - A step of depositing (101, 101') a layer of first electrode (201, 201') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of depositing (102, 102') a layer of hafnium dioxide-based active material (202, 202') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of depositing (105, 105') a first conductive layer (204, 204') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of making (106, 106') a mask (205, 205') at the zone of the first conductive layer for forming the ferroelectric memory, leaving the zone of the first conductive layer for forming the OxRAM resistive memory free; - A step of removing (107, 107') the first conductive layer (204, 204') at the zone of the first conductive layer for forming the OxRAM resistive memory, the zone of the first conductive layer for forming the ferroelectric memory being protected by the mask (205, 205'); - A step of removing (108, 108') the mask (205, 205') at the zone of the first conductive layer for forming the ferroelectric memory; - A step of depositing (109, 109') a second conductive layer (206, 206'), said second conductive layer (206, 206') being in contact with the first conductive layer (204, 204') at the zone of the first conductive layer for forming the ferroelectric memory and in contact with the layer of active material (203, 203') at the zone of the first conductive layer for forming the OxRAM, the material of the second conductive layer (206, 206') being selected to create oxygen vacancies in the active layer of the OxRAM when the second conductive layer is in contact with the active layer (203, 203') of the OxRAM; - A step of depositing (109, 109') a third conductive layer (207, 207') carried out identically for the zone for forming the OxRAM and the zone for forming the ferroelectric memory, said third conductive layer (207, 207') being in contact with the second conductive layer (206, 206'). - A step of depositing (101, 101') a layer of first electrode (201, 201') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of depositing (102, 102') a layer of hafnium dioxide-based active material (202, 202') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of depositing (105, 105') a first conductive layer (204, 204') carried out identically for the zone for forming the OxRAM resistive memory and the zone for forming the ferroelectric memory; - A step of making (106, 106') a mask (205, 205') at the zone of the first conductive layer for forming the ferroelectric memory, leaving the zone of the first conductive layer for forming the OxRAM resistive memory free; - A step of removing (107, 107') the first conductive layer (204, 204') at the zone of the first conductive layer for forming the OxRAM resistive memory, the zone of the first conductive layer for forming the ferroelectric memory being protected by the mask (205, 205'); - A step of removing (108, 108') the mask (205, 205') at the zone of the first conductive layer for forming the ferroelectric memory; - A step of depositing (109, 109') a second conductive layer (206, 206'), said second conductive layer (206, 206') being in contact with the first conductive layer (204, 204') at the zone of the first conductive layer for forming the ferroelectric memory and in contact with the layer of active material (203, 203') at the zone of the first conductive layer for forming the OxRAM, the material of the second conductive layer (206, 206') being selected to create oxygen vacancies in the active layer of the OxRAM when the second conductive layer is in contact with the active layer (203, 203') of the OxRAM; - A step of depositing (109, 109') a third conductive layer (207, 207') carried out identically for the zone for forming the OxRAM and the zone for forming the ferroelectric memory, said third conductive layer (207, 207') being in contact with the second conductive layer (206, 206').