A semiconductor device, comprising: a circuit node; a ground node; a first transistor including a source terminal coupled to the circuit node, wherein the first transistor is a p-channel field-effect transistor; a second transistor including a drain terminal coupled to the circuit node and a source terminal of the second transistor coupled to the ground node, wherein the second transistor is an n-channel field-effect transistor; a voltage-limiting circuit including a first terminal coupled to a drain terminal of the first transistor and a second terminal of the voltage-limiting circuit coupled to a gate terminal of the second transistor, wherein the gate terminal of the second transistor is coupled to the drain terminal of the first transistor through the voltage-limiting circuit, wherein the voltage-limiting circuit includes an NPN transistor, a resistor, and a first trigger diode, the resistor having a first terminal connected to the collector of the NPN transistor, the first trigger diode having a cathode connected to the base of the NPN transistor and an anode connected to the ground node, the collector of the NPN transistor being connected to the first terminal of the voltage-limiting circuit, and the emitter of the NPN transistor being connected to the second terminal of the voltage-limiting circuit; and a triggering circuit including an input coupled to the circuit node and an output of the triggering circuit coupled to a gate terminal of the first transistor, wherein the triggering circuit further comprises: a third transistor comprising a first conduction terminal coupled to the gate terminal of the first transistor, and a second trigger diode comprising a first terminal of the second trigger diode coupled to a control terminal of third transistor. a circuit node; a ground node; a first transistor including a source terminal coupled to the circuit node, wherein the first transistor is a p-channel field-effect transistor; a second transistor including a drain terminal coupled to the circuit node and a source terminal of the second transistor coupled to the ground node, wherein the second transistor is an n-channel field-effect transistor; a voltage-limiting circuit including a first terminal coupled to a drain terminal of the first transistor and a second terminal of the voltage-limiting circuit coupled to a gate terminal of the second transistor, wherein the gate terminal of the second transistor is coupled to the drain terminal of the first transistor through the voltage-limiting circuit, wherein the voltage-limiting circuit includes an NPN transistor, a resistor, and a first trigger diode, the resistor having a first terminal connected to the collector of the NPN transistor, the first trigger diode having a cathode connected to the base of the NPN transistor and an anode connected to the ground node, the collector of the NPN transistor being connected to the first terminal of the voltage-limiting circuit, and the emitter of the NPN transistor being connected to the second terminal of the voltage-limiting circuit; and a triggering circuit including an input coupled to the circuit node and an output of the triggering circuit coupled to a gate terminal of the first transistor, wherein the triggering circuit further comprises: a third transistor comprising a first conduction terminal coupled to the gate terminal of the first transistor, and a second trigger diode comprising a first terminal of the second trigger diode coupled to a control terminal of third transistor. a third transistor comprising a first conduction terminal coupled to the gate terminal of the first transistor, and a second trigger diode comprising a first terminal of the second trigger diode coupled to a control terminal of third transistor.