A depth camera assembly (200, 300) for obtaining depth information of a local area surrounding the depth camera assembly (200, 300), the depth camera assembly (200, 300) comprising: a structured light illuminator (140, 210, 320) including a chip (500, 600, 700) comprising an array of vertical cavity surface emitting lasers (VCSELs), wherein each VCSEL comprises an emission region having a width and a length (L1, L2), wherein the length (L1, L2) is greater than the width, the array of VCSELs comprising: a first sub-array of near-field linear VCSELs (530A-D, 630A-H) on a substrate (510, 610, 710); and a second sub-array of far-field linear VCSELs (540A-D, 640A-H) on the substrate (510, 610, 710); wherein each of the near-field linear VCSELs (530A-D, 630A-H) comprise a linear emission region over a first length; and wherein each of the far-field linear VCSELs (540A-D, 640A-H) comprise a linear emission region over a second length greater than the first length of each of the near-field linear VCSELs (530A-D, 630AH); wherein the linear emission region of at least one far-field linear VCSEL (540A-D, 640A-H) of the second sub-array of VCSELs is parallel to an adjacent linear emission region of a respective near-field linear VCSEL (530A-D, 630A-H)of the first sub-array of VCSELs; wherein each far-field VCSEL (540A-D, 640A-H) is configured to emit light at a greater flux than each near-field VCSEL (530A-D, 630A-H); characterised in that the depth camera assembly (200, 300) further comprises a controller (150, 230), said controller (150, 230) configured to: determine which of the near-field or far-field depth sensing is suitable for a portion of the local area; and activate the near-field VCSELs (530A-D, 630A-H) or the far-field VCSELs (540A-D, 640A-H) in the portion of the local area accordingly. a structured light illuminator (140, 210, 320) including a chip (500, 600, 700) comprising an array of vertical cavity surface emitting lasers (VCSELs), wherein each VCSEL comprises an emission region having a width and a length (L1, L2), wherein the length (L1, L2) is greater than the width, the array of VCSELs comprising: a first sub-array of near-field linear VCSELs (530A-D, 630A-H) on a substrate (510, 610, 710); and a second sub-array of far-field linear VCSELs (540A-D, 640A-H) on the substrate (510, 610, 710); wherein each of the near-field linear VCSELs (530A-D, 630A-H) comprise a linear emission region over a first length; and wherein each of the far-field linear VCSELs (540A-D, 640A-H) comprise a linear emission region over a second length greater than the first length of each of the near-field linear VCSELs (530A-D, 630AH); wherein the linear emission region of at least one far-field linear VCSEL (540A-D, 640A-H) of the second sub-array of VCSELs is parallel to an adjacent linear emission region of a respective near-field linear VCSEL (530A-D, 630A-H)of the first sub-array of VCSELs; wherein each far-field VCSEL (540A-D, 640A-H) is configured to emit light at a greater flux than each near-field VCSEL (530A-D, 630A-H); a first sub-array of near-field linear VCSELs (530A-D, 630A-H) on a substrate (510, 610, 710); and a second sub-array of far-field linear VCSELs (540A-D, 640A-H) on the substrate (510, 610, 710); wherein each of the near-field linear VCSELs (530A-D, 630A-H) comprise a linear emission region over a first length; and wherein each of the far-field linear VCSELs (540A-D, 640A-H) comprise a linear emission region over a second length greater than the first length of each of the near-field linear VCSELs (530A-D, 630AH); wherein the linear emission region of at least one far-field linear VCSEL (540A-D, 640A-H) of the second sub-array of VCSELs is parallel to an adjacent linear emission region of a respective near-field linear VCSEL (530A-D, 630A-H)of the first sub-array of VCSELs; wherein each far-field VCSEL (540A-D, 640A-H) is configured to emit light at a greater flux than each near-field VCSEL (530A-D, 630A-H); characterised in that the depth camera assembly (200, 300) further comprises a controller (150, 230), said controller (150, 230) configured to: determine which of the near-field or far-field depth sensing is suitable for a portion of the local area; and activate the near-field VCSELs (530A-D, 630A-H) or the far-field VCSELs (540A-D, 640A-H) in the portion of the local area accordingly. determine which of the near-field or far-field depth sensing is suitable for a portion of the local area; and activate the near-field VCSELs (530A-D, 630A-H) or the far-field VCSELs (540A-D, 640A-H) in the portion of the local area accordingly.