A capacitive micromachined ultrasonic transducer, CMUT, device, comprising: at least one CMUT element with at least one CMUT cell, said CMUT cell including: a first substrate of a single crystal material having a resistivity less than (<) 0.1 ohm-cm having a top side including a patterned dielectric layer thereon including a thick dielectric region and a thin dielectric region, and a through-substrate via, TSV, extending a full thickness of said first substrate, wherein said TSV is formed of said single crystal material, wherein said TSV is electrically isolated by isolation regions from surrounding regions of said single crystal material, and said TSV is positioned under a top side substrate contact area of said first substrate; a membrane layer bonded to said thick dielectric region and over said thin dielectric region to provide a movable membrane over a microelectromechanical system, MEMS, cavity, and a top side metal layer over said top side substrate contact area, thereby electrically connecting the top side of said TSV, and over said movable membrane including a portion coupling said top side substrate contact area to said movable membrane; and further comprising a solid dielectric filler in said isolation regions; characterized in that said CMUT cell is further including: a patterned backside metal layer on a bottom side of said first substrate including a first patterned layer portion contacting a bottom side of the TSV in order to provide a first electrode contact to the movable top plate, and a second patterned layer portion contacting the bottom side of said first substrate lateral to the TSV, to provide a second fixed electrode contact. at least one CMUT element with at least one CMUT cell, said CMUT cell including: a first substrate of a single crystal material having a resistivity less than (<) 0.1 ohm-cm having a top side including a patterned dielectric layer thereon including a thick dielectric region and a thin dielectric region, and a through-substrate via, TSV, extending a full thickness of said first substrate, wherein said TSV is formed of said single crystal material, wherein said TSV is electrically isolated by isolation regions from surrounding regions of said single crystal material, and said TSV is positioned under a top side substrate contact area of said first substrate; a membrane layer bonded to said thick dielectric region and over said thin dielectric region to provide a movable membrane over a microelectromechanical system, MEMS, cavity, and a top side metal layer over said top side substrate contact area, thereby electrically connecting the top side of said TSV, and over said movable membrane including a portion coupling said top side substrate contact area to said movable membrane; and a first substrate of a single crystal material having a resistivity less than (<) 0.1 ohm-cm having a top side including a patterned dielectric layer thereon including a thick dielectric region and a thin dielectric region, and a through-substrate via, TSV, extending a full thickness of said first substrate, wherein said TSV is formed of said single crystal material, wherein said TSV is electrically isolated by isolation regions from surrounding regions of said single crystal material, and said TSV is positioned under a top side substrate contact area of said first substrate; a membrane layer bonded to said thick dielectric region and over said thin dielectric region to provide a movable membrane over a microelectromechanical system, MEMS, cavity, and a top side metal layer over said top side substrate contact area, thereby electrically connecting the top side of said TSV, and over said movable membrane including a portion coupling said top side substrate contact area to said movable membrane; and further comprising a solid dielectric filler in said isolation regions; characterized in that said CMUT cell is further including: a patterned backside metal layer on a bottom side of said first substrate including a first patterned layer portion contacting a bottom side of the TSV in order to provide a first electrode contact to the movable top plate, and a second patterned layer portion contacting the bottom side of said first substrate lateral to the TSV, to provide a second fixed electrode contact.