Method for producing a solar cell having a heterojunction, a front side provided for light incidence and a rear side located opposite the front side, the method comprising the following steps: - providing a crystalline semiconductor substrate of a first conduction type; - forming at least one first amorphous, nano- and/or microcrystalline semiconductor layer or layer sequence (3, 5) on a front surface of the semiconductor substrate, either by forming a front emitter of a second conduction type which is opposite to the first conduction type or by forming a front surface field layer of the first conduction type; - forming at least one second amorphous, nano- and/or microcrystalline semiconductor layer or layer sequence (4, 6) on a rear surface of the semiconductor substrate, either by forming a rear surface field layer of the first conduction type or by forming a rear emitter of the second conduction type; - forming at least one electrically conductive, transparent front electrode layer on the front emitter or the front surface field layer and forming at least one electrically conductive, transparent rear electrode layer on the rear surface field layer or the rear emitter; - forming a front metal contact layer grid structure for electrically contacting the front emitter or the front surface field layer; - front PECVD deposition of an electrically non-conductive, transparent dielectric front cover layer after forming the front contact layer grid structure; and - forming a rear metallization on the rear electrode layer; characterized in that a surface-selective PECVD deposition or hot wire CVD is used for the deposition of the front cover layer, and the front cover layer is deposited with such a thickness that the front cover layer forms a closed layer directly after its layer deposition, without additional heat and/or chemical treatment, only on the regions surrounding the front contact layer grid structure, but not on the front contact layer grid structure, the electrically conductive, transparent front electrode layer being a TCO layer, a material consisting predominantly of silver or copper and printed as a finger structure using a paste being selected for the formation of the front contact layer grid structure; at least one SiO x, SiN x, SiO x N y layer or a layer or layer sequence consisting of a combination of at least two of the aforementioned materials being used for the deposition of the front cover layer; the front cover layer being deposited using silane chemistry; and the front cover layer being deposited in a temperature range between 50°C and 250°C. - providing a crystalline semiconductor substrate of a first conduction type; - forming at least one first amorphous, nano- and/or microcrystalline semiconductor layer or layer sequence (3, 5) on a front surface of the semiconductor substrate, either by forming a front emitter of a second conduction type which is opposite to the first conduction type or by forming a front surface field layer of the first conduction type; - forming at least one second amorphous, nano- and/or microcrystalline semiconductor layer or layer sequence (4, 6) on a rear surface of the semiconductor substrate, either by forming a rear surface field layer of the first conduction type or by forming a rear emitter of the second conduction type; - forming at least one electrically conductive, transparent front electrode layer on the front emitter or the front surface field layer and forming at least one electrically conductive, transparent rear electrode layer on the rear surface field layer or the rear emitter; - forming a front metal contact layer grid structure for electrically contacting the front emitter or the front surface field layer; - front PECVD deposition of an electrically non-conductive, transparent dielectric front cover layer after forming the front contact layer grid structure; and - forming a rear metallization on the rear electrode layer; characterized in that a surface-selective PECVD deposition or hot wire CVD is used for the deposition of the front cover layer, and the front cover layer is deposited with such a thickness that the front cover layer forms a closed layer directly after its layer deposition, without additional heat and/or chemical treatment, only on the regions surrounding the front contact layer grid structure, but not on the front contact layer grid structure, the electrically conductive, transparent front electrode layer being a TCO layer, a material consisting predominantly of silver or copper and printed as a finger structure using a paste being selected for the formation of the front contact layer grid structure; at least one SiO x, SiN x, SiO x N y layer or a layer or layer sequence consisting of a combination of at least two of the aforementioned materials being used for the deposition of the front cover layer; the front cover layer being deposited using silane chemistry; and the front cover layer being deposited in a temperature range between 50°C and 250°C.