A method of fabricating a light emitting diode device comprising: growing light emitting diode layers on a growth substrate, the LED layers comprising a first epitaxial layer of a first conductivity type formed on the growth substrate, a second epitaxial layer of a second conductivity type formed on the first epitaxial layer, and an active layer disposed between the first and second epitaxial layers, wherein a primary emission surface on a first side of the first epitaxial layer is substantially parallel to the active layer, the LED layers forming at least one individual LED; providing a package substrate wherein a lateral extent of the package substrate exceeds that of an individual LED, the package substrate comprising a support surface having electrical contact pads thereon for respective electrical connection to the first and second epitaxial layers, the contact pads being electrically connected to metal leads for connection to package terminals; placing the LED layers attached to the growth substrate on the package substrate such that the second epitaxial layer is facing a first contact pad on the package substrate; bonding the second epitaxial layer to the first contact pad using a metal interface disposed between the first contact pad on the package substrate and the second epitaxial layer, thereby electrically connecting the first contact pad to the second epitaxial layer with no support substrate there between, wherein a nearest distance between the primary emission surface and the support surface of the package substrate is not more than 50 microns; and removing the growth substrate; characterized by further processing the LED layers after the growth substrate has been removed, said further processing including: depositing a metal layer on the primary emission surface, and then performing patterning of the metal layer such that said metal layer may distribute current while allowing spaces between portions of the patterned metal layer for light to pass. growing light emitting diode layers on a growth substrate, the LED layers comprising a first epitaxial layer of a first conductivity type formed on the growth substrate, a second epitaxial layer of a second conductivity type formed on the first epitaxial layer, and an active layer disposed between the first and second epitaxial layers, wherein a primary emission surface on a first side of the first epitaxial layer is substantially parallel to the active layer, the LED layers forming at least one individual LED; providing a package substrate wherein a lateral extent of the package substrate exceeds that of an individual LED, the package substrate comprising a support surface having electrical contact pads thereon for respective electrical connection to the first and second epitaxial layers, the contact pads being electrically connected to metal leads for connection to package terminals; placing the LED layers attached to the growth substrate on the package substrate such that the second epitaxial layer is facing a first contact pad on the package substrate; bonding the second epitaxial layer to the first contact pad using a metal interface disposed between the first contact pad on the package substrate and the second epitaxial layer, thereby electrically connecting the first contact pad to the second epitaxial layer with no support substrate there between, removing the growth substrate; characterized by further processing the LED layers after the growth substrate has been removed, said further processing including: depositing a metal layer on the primary emission surface, and then performing patterning of the metal layer such that said metal layer may distribute current while allowing spaces between portions of the patterned metal layer for light to pass.