Optoelectronic semiconductor chip comprising: - a semiconductor body comprising an n-conducting region and a p-conducting region, characterized in that - it comprises a single n-contact element via which the n-conducting region is electrically contactable through the p-conducting region, and - the n-contact element comprises a recess in the p-conducting region, the recess being formed by at least one side surface and a bottom surface, the at least one side surface being formed by semiconductor material of the p-conducting region and a vertical expansion of the recess being at least partially a vertical expansion of the p-conducting region, and - the n-contact element laterally limits the p-conducting region at least in parts, - the n contact element has an n terminal surface formed by a semiconductor material of the n-conducting region, the n terminal surface extending perpendicular to a growth direction of the semiconductor body and being formed by the bottom surface of the recess, - the n-contact element has an n-contact metallization which is directly adjacent to the n terminal surface at least in places, - the semiconductor body has a radiation decoupling surface arranged on the side of the n-conducting region remote from the p-conducting region, - in which the p-conducting region has a p terminal surface opposite the radiation decoupling surface, the p terminal surface being electrically conductively connected to a p-contact metallization, - in which the n- and the p-contact metallization are led out of the semiconductor body in the lateral direction and do not overlap each other in the vertical direction. - a semiconductor body comprising an n-conducting region and a p-conducting region, characterized in that - it comprises a single n-contact element via which the n-conducting region is electrically contactable through the p-conducting region, and - the n-contact element comprises a recess in the p-conducting region, the recess being formed by at least one side surface and a bottom surface, the at least one side surface being formed by semiconductor material of the p-conducting region and a vertical expansion of the recess being at least partially a vertical expansion of the p-conducting region, and - the n-contact element laterally limits the p-conducting region at least in parts, - the n contact element has an n terminal surface formed by a semiconductor material of the n-conducting region, the n terminal surface extending perpendicular to a growth direction of the semiconductor body and being formed by the bottom surface of the recess, - the n-contact element has an n-contact metallization which is directly adjacent to the n terminal surface at least in places, - the semiconductor body has a radiation decoupling surface arranged on the side of the n-conducting region remote from the p-conducting region, - in which the p-conducting region has a p terminal surface opposite the radiation decoupling surface, the p terminal surface being electrically conductively connected to a p-contact metallization, - in which the n- and the p-contact metallization are led out of the semiconductor body in the lateral direction and do not overlap each other in the vertical direction.