A method for manufacturing an edge termination structure for a silicon carbide power semiconductor device having a central region and an edge region between a first main side and a second main side opposite to the first main side, the method comprising the following manufacturing steps: a) providing an n doped silicon carbide substrate having the second main side as one main side, b) epitaxially growing a silicon carbide n- doped drift layer on a side opposite to the second main side, which has a lower doping concentration than the substrate, wherein the side of the drift layer opposite to such side, at which the silicon carbide substrate is arranged, forms the first main side, c) creating at least one p doped termination layer in the edge region by implanting a second ion up to a maximum termination layer depth and annealing on the first main side, d) after step c), forming an (n- -) doped doping reduction layer having a doping reduction layer depth range between a depth of a doping concentration minimum of the doping reduction layer below the first main side up to a maximum doping reduction layer depth, wherein a depth of a doping concentration minimum of the doping reduction layer is greater than the maximum termination layer depth, which doping reduction layer comprises at least one doping reduction region, wherein for the creation of each doping reduction region either hydrogen or helium is implanted as a first ion with an implantation energy on the first main side at least in the edge region, wherein the first ion is implanted in a doping reduction region depth range between a depth of a doping concentration minimum of the doping reduction region below the first main side up to a maximum doping reduction region depth, wherein the first ion and the at least one implantation energy are chosen such that the doping reduction layer depth range is less than 10 μm, e) annealing the doping reduction layer at a temperature above 320 °C and below 1200 °C, wherein step d) is performed such that the doping concentration of the drift layer is reduced in the doping reduction layer and wherein in step d) a plurality of doping reduction regions is formed by implanting the first ion with different implantation energies, wherein the plurality of doping regions overlap or are in touch with each other such that a continuous doping reduction layer is formed. a) providing an n doped silicon carbide substrate having the second main side as one main side, b) epitaxially growing a silicon carbide n- doped drift layer on a side opposite to the second main side, which has a lower doping concentration than the substrate, wherein the side of the drift layer opposite to such side, at which the silicon carbide substrate is arranged, forms the first main side, c) creating at least one p doped termination layer in the edge region by implanting a second ion up to a maximum termination layer depth and annealing on the first main side, d) after step c), forming an (n- -) doped doping reduction layer having a doping reduction layer depth range between a depth of a doping concentration minimum of the doping reduction layer below the first main side up to a maximum doping reduction layer depth, wherein a depth of a doping concentration minimum of the doping reduction layer is greater than the maximum termination layer depth, which doping reduction layer comprises at least one doping reduction region, wherein for the creation of each doping reduction region either hydrogen or helium is implanted as a first ion with an implantation energy on the first main side at least in the edge region, wherein the first ion is implanted in a doping reduction region depth range between a depth of a doping concentration minimum of the doping reduction region below the first main side up to a maximum doping reduction region depth, wherein the first ion and the at least one implantation energy are chosen such that the doping reduction layer depth range is less than 10 μm, e) annealing the doping reduction layer at a temperature above 320 °C and below 1200 °C,