A method of making a deflectable, free hanging micro structure comprising at least one hinge member, the method comprising the following steps: providing a sacrificial first SOI wafer comprising a single crystalline silicon constituting material from which the micro structure is formed, a buried oxide layer and a handle layer constituting a sacrificial layer, said sacrificial first SOI wafer being provided by: evaporating Ti/Au to form a plating base covering the entire wafer; patterning by lithography and electroplating solder material, preferably Au and Sn in finite bumps and in separate layers, patterning by lithography and Au/Ti etch to remove excess Au/Ti; and providing a second semiconductor wafer comprising necessary components for forming the structure in cooperation with said first wafer; said second wafer being provided by evaporating or electroplating Au, electroless plating Ni/Au or sputtering TiW/Au to form a solderable layer; patterning by lithography and etching this solderable layer; bringing together the wafers so as to contact the solder material and the solderable layer and bonding said wafers using heat and optionally pressure; thereafter stripping the sacrificial layer and the oxide layer and patterning the SOI wafer device layer by lithography to define the desired deflectable microstructure having hinges, and subsequently performing silicon etch to make the deflectable, free hanging micro structure. providing a sacrificial first SOI wafer comprising a single crystalline silicon constituting material from which the micro structure is formed, a buried oxide layer and a handle layer constituting a sacrificial layer, said sacrificial first SOI wafer being provided by: evaporating Ti/Au to form a plating base covering the entire wafer; patterning by lithography and electroplating solder material, preferably Au and Sn in finite bumps and in separate layers, patterning by lithography and Au/Ti etch to remove excess Au/Ti; and providing a second semiconductor wafer comprising necessary components for forming the structure in cooperation with said first wafer; said second wafer being provided by evaporating or electroplating Au, electroless plating Ni/Au or sputtering TiW/Au to form a solderable layer; patterning by lithography and etching this solderable layer; bringing together the wafers so as to contact the solder material and the solderable layer and bonding said wafers using heat and optionally pressure; thereafter stripping the sacrificial layer and the oxide layer and patterning the SOI wafer device layer by lithography to define the desired deflectable microstructure having hinges, and subsequently performing silicon etch to make the deflectable, free hanging micro structure. evaporating Ti/Au to form a plating base covering the entire wafer; patterning by lithography and electroplating solder material, preferably Au and Sn in finite bumps and in separate layers, patterning by lithography and Au/Ti etch to remove excess Au/Ti; and providing a second semiconductor wafer comprising necessary components for forming the structure in cooperation with said first wafer; said second wafer being provided by evaporating or electroplating Au, electroless plating Ni/Au or sputtering TiW/Au to form a solderable layer; patterning by lithography and etching this solderable layer; bringing together the wafers so as to contact the solder material and the solderable layer and bonding said wafers using heat and optionally pressure; thereafter stripping the sacrificial layer and the oxide layer and patterning the SOI wafer device layer by lithography to define the desired deflectable microstructure having hinges, and subsequently performing silicon etch to make the deflectable, free hanging micro structure.