A solar cell comprising: a substrate doped with impurities of a first conductivity type; an emitter region doped with impurities of a second conductivity type and positioned at a first surface of the substrate, the emitter region including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance; a plurality of surface field regions positioned at a second surface opposite the first surface of the substrate, the plurality of surface field regions being more heavily doped than the substrate with impurities of the first conductivity type; a plurality of first electrodes positioned on the second emitter region to be separated from one another and connected to the second emitter region; a plurality of second electrodes positioned on the plurality of surface field regions to be separated from one another and connected to the plurality of surface field regions; a first anti-reflection layer positioned on the first surface of the substrate, the second surface of the substrate, and a third surface of the substrate, the third surface being a lateral surface of the substrate and the first anti-reflection layer being formed of aluminum oxide and having negative fixed charges; a second anti-reflection layer positioned only on the first anti-reflection layer at the first surface and the third surface of the substrate, the second anti-reflection layer being formed of silicon nitride and having positive fixed charges; a passivation layer of silicon nitride having positive fixed charges positioned directly on the second surface of the substrate, wherein the first anti-reflection layer is positioned on the passivation layer, wherein each of the first anti-reflection layer and the passivation layer has a plurality of openings where the plurality of second electrodes penetrate therethrough on the second surface of the substrate, and wherein each of the first and second anti-reflection layers (131,132) have a plurality of openings where the plurality of first electrodes penetrate therethrough on the first surface of the substrate. a substrate doped with impurities of a first conductivity type; an emitter region doped with impurities of a second conductivity type and positioned at a first surface of the substrate, the emitter region including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance; a plurality of surface field regions positioned at a second surface opposite the first surface of the substrate, the plurality of surface field regions being more heavily doped than the substrate with impurities of the first conductivity type; a plurality of first electrodes positioned on the second emitter region to be separated from one another and connected to the second emitter region; a plurality of second electrodes positioned on the plurality of surface field regions to be separated from one another and connected to the plurality of surface field regions; a first anti-reflection layer positioned on the first surface of the substrate, the second surface of the substrate, and a third surface of the substrate, the third surface being a lateral surface of the substrate and the first anti-reflection layer being formed of aluminum oxide and having negative fixed charges; a second anti-reflection layer positioned only on the first anti-reflection layer at the first surface and the third surface of the substrate, the second anti-reflection layer being formed of silicon nitride and having positive fixed charges; a passivation layer of silicon nitride having positive fixed charges positioned directly on the second surface of the substrate, wherein the first anti-reflection layer is positioned on the passivation layer, wherein each of the first anti-reflection layer and the passivation layer has a plurality of openings where the plurality of second electrodes penetrate therethrough on the second surface of the substrate, and wherein each of the first and second anti-reflection layers (131,132) have a plurality of openings where the plurality of first electrodes penetrate therethrough on the first surface of the substrate.