A circular display device comprising: semiconductor light-emitting diodes (2050, 3050); a plurality of scan lines (2040, 3040) configured to transmit scan driving signals to the semiconductor light-emitting diodes and located parallel to each other, wherein the scan lines (2040, 3040) are connected to the semiconductor light-emitting diodes (2050, 3050), said plurality of scan lines (2040, 3040) being spaced apart from a wiring substrate by a distance corresponding to a thickness of the semiconductor light-emitting diodes; a plurality of data lines (2020, 3020) arranged perpendicularly to the scan lines (2040, 3040) and configured to transmit data driving signals to the semiconductor light-emitting diodes, whererin the data lines (2020, 3020) are formed on the wiring substrate (2010, 3010) and connected to the semiconductor light-emitting diodes (2050, 3050); a first driver (2071, 3071) and a second driver (2072, 3072) connected to the scan lines and the data lines and configured to provide the scan driving signals and the data driving signals wherein the data lines (2020, 3020) are split into a first data group of data lines connected to the first driver (2071, 3071) and a second data group of data lines connected to the second driver (2072, 3072), wherein the scan lines (2040, 3040) are split into a first scan group of scan lines connected to the first driver (2071, 3071) and a second scan group of scan lines connected to the second driver (2072, 3072); scan connecting wires (2044, 3044) being formed on the wiring substrate and connected to the first driver (2071, 3071) or second driver (2072, 3072); connecting portions (2043, 3043) including a plurality of layers (2043a, 2043b, 2043c) and connecting the scan lines to the scan connecting wires (2044, 3044) so that the scan lines extend to the wiring substrate,wherein the connecting portions each comprise a connecting conductive semiconductor layer made of a same material as an n-type semiconductor layer of the semiconductor light-emitting diodes, and a conductive layer (2043b, 2043c) overlapping the connecting semiconductor layer and made of a conductive material. semiconductor light-emitting diodes (2050, 3050); a plurality of scan lines (2040, 3040) configured to transmit scan driving signals to the semiconductor light-emitting diodes and located parallel to each other, wherein the scan lines (2040, 3040) are connected to the semiconductor light-emitting diodes (2050, 3050), said plurality of scan lines (2040, 3040) being spaced apart from a wiring substrate by a distance corresponding to a thickness of the semiconductor light-emitting diodes; a plurality of data lines (2020, 3020) arranged perpendicularly to the scan lines (2040, 3040) and configured to transmit data driving signals to the semiconductor light-emitting diodes, whererin the data lines (2020, 3020) are formed on the wiring substrate (2010, 3010) and connected to the semiconductor light-emitting diodes (2050, 3050); a first driver (2071, 3071) and a second driver (2072, 3072) connected to the scan lines and the data lines and configured to provide the scan driving signals and the data driving signals wherein the data lines (2020, 3020) are split into a first data group of data lines connected to the first driver (2071, 3071) and a second data group of data lines connected to the second driver (2072, 3072), wherein the scan lines (2040, 3040) are split into a first scan group of scan lines connected to the first driver (2071, 3071) and a second scan group of scan lines connected to the second driver (2072, 3072); scan connecting wires (2044, 3044) being formed on the wiring substrate and connected to the first driver (2071, 3071) or second driver (2072, 3072); connecting portions (2043, 3043) including a plurality of layers (2043a, 2043b, 2043c) and connecting the scan lines to the scan connecting wires (2044, 3044) so that the scan lines extend to the wiring substrate,wherein the connecting portions each comprise a connecting conductive semiconductor layer made of a same material as an n-type semiconductor layer of the semiconductor light-emitting diodes, and a conductive layer (2043b, 2043c) overlapping the connecting semiconductor layer and made of a conductive material.