A light emitting element, comprising: a support substrate; a first wafer bonding layer on the support substrate; a current blocking region on a first portion of the first wafer bonding layer, a bottom of the current blocking region contacting the first wafer bonding layer; at least a part of a side of the current blocking region having an inclined surface, and the current blocking region including an insulating material; a second wafer bonding layer on a remaining portion of the first wafer bonding layer, a side surface of the second wafer bonding layer contacting a side surface of the current blocking region; a second electrode layer on the current blocking region and the second wafer bonding layer, the second electrode layer contacting the side and top of the current blocking region, the second electrode layer being made of a reflective material; a current spreading layer on a portion of the second electrode layer corresponding to said remaining portion of the first wafer bonding layer, the current spreading layer being made of a transparent material; a second conductivity type semiconductor layer on the second electrode layer and the current spreading layer such that the second electrode layer forms an ohmic contacting interface with the current spreading layer and forms a Schottky contacting interface with the second conductivity type semiconductor layer; an active layer formed on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; and a first electrode layer formed on the first conductivity type semiconductor layer, wherein the part of the second electrode layer which forms the Schottky contacting surface is overlapped with the first electrode layer in a vertical direction, wherein the current blocking region is vertically overlapped with the first electrode layer, and wherein the current blocking region is vertically overlapped with the part of the second electrode layer which forms the Schottky contacting interface. a support substrate; a first wafer bonding layer on the support substrate; a current blocking region on a first portion of the first wafer bonding layer, a bottom of the current blocking region contacting the first wafer bonding layer; at least a part of a side of the current blocking region having an inclined surface, and the current blocking region including an insulating material; a second wafer bonding layer on a remaining portion of the first wafer bonding layer, a side surface of the second wafer bonding layer contacting a side surface of the current blocking region; a second electrode layer on the current blocking region and the second wafer bonding layer, the second electrode layer contacting the side and top of the current blocking region, the second electrode layer being made of a reflective material; a current spreading layer on a portion of the second electrode layer corresponding to said remaining portion of the first wafer bonding layer, the current spreading layer being made of a transparent material; a second conductivity type semiconductor layer on the second electrode layer and the current spreading layer such that the second electrode layer forms an ohmic contacting interface with the current spreading layer and forms a Schottky contacting interface with the second conductivity type semiconductor layer; an active layer formed on the second conductivity type semiconductor layer; a first conductivity type semiconductor layer on the active layer; and a first electrode layer formed on the first conductivity type semiconductor layer, wherein the part of the second electrode layer which forms the Schottky contacting surface is overlapped with the first electrode layer in a vertical direction, wherein the current blocking region is vertically overlapped with the first electrode layer, and wherein the current blocking region is vertically overlapped with the part of the second electrode layer which forms the Schottky contacting interface.