Method for separating at least one solid-state layer, in particular a solid-state wafer, from a donor substrate, at least comprising the following steps: providing a donor substrate, producing modifications in the interior of the donor substrate by means of LASER beams, wherein a detachment region is predefined by the modifications, along which detachment region the solid-state layer is separated from the donor substrate, characterized by: removing material of the donor substrate proceeding from a surface, extending in the circumferential direction of the donor substrate, in the direction of the centre of the donor substrate, in order to produce a circumferential depression having an asymmetrical shape, wherein the detachment region is exposed by the material removal, separating the solid-state layer from the donor substrate, wherein the donor substrate is weakened by the modifications in the detachment region in such a way that the solid-state layer detaches from the donor substrate on account of the material removal, or a stress-inducing layer is produced or arranged at an, in particular planar, surface of the donor substrate, said surface being oriented in an inclined manner with respect to the circumferential surface, and mechanical stresses are induced in the donor substrate by means of thermal exposure of the stress-inducing layer, wherein the mechanical stresses give rise to a crack for separating a solid-state layer, which crack propagates along the modifications proceeding from that surface of the donor substrate which is exposed as a result of the material removal. providing a donor substrate, producing modifications in the interior of the donor substrate by means of LASER beams, wherein a detachment region is predefined by the modifications, along which detachment region the solid-state layer is separated from the donor substrate, characterized by: removing material of the donor substrate proceeding from a surface, extending in the circumferential direction of the donor substrate, in the direction of the centre of the donor substrate, in order to produce a circumferential depression having an asymmetrical shape, wherein the detachment region is exposed by the material removal, separating the solid-state layer from the donor substrate, wherein the donor substrate is weakened by the modifications in the detachment region in such a way that the solid-state layer detaches from the donor substrate on account of the material removal, or a stress-inducing layer is produced or arranged at an, in particular planar, surface of the donor substrate, said surface being oriented in an inclined manner with respect to the circumferential surface, and mechanical stresses are induced in the donor substrate by means of thermal exposure of the stress-inducing layer, wherein the mechanical stresses give rise to a crack for separating a solid-state layer, which crack propagates along the modifications proceeding from that surface of the donor substrate which is exposed as a result of the material removal. removing material of the donor substrate proceeding from a surface, extending in the circumferential direction of the donor substrate, in the direction of the centre of the donor substrate, in order to produce a circumferential depression having an asymmetrical shape, wherein the detachment region is exposed by the material removal, separating the solid-state layer from the donor substrate, wherein the donor substrate is weakened by the modifications in the detachment region in such a way that the solid-state layer detaches from the donor substrate on account of the material removal, or a stress-inducing layer is produced or arranged at an, in particular planar, surface of the donor substrate, said surface being oriented in an inclined manner with respect to the circumferential surface, and mechanical stresses are induced in the donor substrate by means of thermal exposure of the stress-inducing layer, wherein the mechanical stresses give rise to a crack for separating a solid-state layer, which crack propagates along the modifications proceeding from that surface of the donor substrate which is exposed as a result of the material removal.