A sensor processing circuit comprising: a first and second signal processing interface (222, 224), each of said first and second signal processing interfaces comprising a PN junction switch which comprises a gate material layer, positioned on an oxide material layer, the oxide material layer being attached to a substrate, such as silicon; a processing system connected to an output of each of said first and second signal processing interfaces; a biasing voltage source switchably coupled to said first signal processing interface via a first switch assembly and switchably coupled to said second signal processing interface via a second switch assembly; a first control output of said processing system controllably coupled to said first switch assembly and a second control output of said processing system controllably couple to said second switch assembly; and wherein said processing system includes a memory storing instructions operable to cause said sensor processing circuit to perform the steps of: connecting a first of said first and second signal processing interfaces to the biasing voltage source, thereby causing said first signal processing interface to pass a sensor signal to the processing system; disconnecting said first of said first and second processing interfaces from said biasing voltage source and connecting a second of said signal processing interfaces to said biasing voltage source while said sensor system is operating at a high temperature, thereby counteracting an ionic contamination in the oxide material layer of the PN junction switch of said first of said first and second signal processing interfaces. a first and second signal processing interface (222, 224), each of said first and second signal processing interfaces comprising a PN junction switch which comprises a gate material layer, positioned on an oxide material layer, the oxide material layer being attached to a substrate, such as silicon; a processing system connected to an output of each of said first and second signal processing interfaces; a biasing voltage source switchably coupled to said first signal processing interface via a first switch assembly and switchably coupled to said second signal processing interface via a second switch assembly; a first control output of said processing system controllably coupled to said first switch assembly and a second control output of said processing system controllably couple to said second switch assembly; and wherein said processing system includes a memory storing instructions operable to cause said sensor processing circuit to perform the steps of: connecting a first of said first and second signal processing interfaces to the biasing voltage source, thereby causing said first signal processing interface to pass a sensor signal to the processing system; disconnecting said first of said first and second processing interfaces from said biasing voltage source and connecting a second of said signal processing interfaces to said biasing voltage source while said sensor system is operating at a high temperature, thereby counteracting an ionic contamination in the oxide material layer of the PN junction switch of said first of said first and second signal processing interfaces. connecting a first of said first and second signal processing interfaces to the biasing voltage source, thereby causing said first signal processing interface to pass a sensor signal to the processing system; disconnecting said first of said first and second processing interfaces from said biasing voltage source and connecting a second of said signal processing interfaces to said biasing voltage source while said sensor system is operating at a high temperature, thereby counteracting an ionic contamination in the oxide material layer of the PN junction switch of said first of said first and second signal processing interfaces.