Method for producing patterns in a layer to be etched, from a stack comprising at least the layer to be etched and a masking layer surmounting the layer to be etched, the masking layer having at least one pattern, the method being characterised in that it comprises at least: a) a step of modifying at least one zone of the layer to be etched by implanting ions to the right of said at least one pattern of said masking layer; b) at least one sequence of steps comprising: b1) a step of enlarging said at least one pattern of said masking layer, said masking layer having been conserved after the modification step in order to carry out the enlarging step, the enlarging step being carried out so as to enlarge said at least one pattern along a plane wherein extends mainly the layer to be etched; b2) a step of modifying at least one zone (411', 411") of the layer to be etched by implanting ions to the right of the at least one enlarged pattern of said masking layer, the implantation being carried out over a depth less than the implantation depth of the preceding modification step; c) a step of removing (461, 462) modified zones (411, 411', 411"), the removal comprising a step of etching modified zones (411, 411', 411") selectively at the non-modified zones of the layer to be etched, said etching step being a wet etching; and wherein: - either the masking layer is a hard mask, - or the masking layer comprises carbon and the stack comprises a buffer layer, the buffer layer being arranged between the masking layer comprising carbon and the layer to be etched, the buffer layer covering the layer to be etched during the implantation. a) a step of modifying at least one zone of the layer to be etched by implanting ions to the right of said at least one pattern of said masking layer; b) at least one sequence of steps comprising: b1) a step of enlarging said at least one pattern of said masking layer, said masking layer having been conserved after the modification step in order to carry out the enlarging step, the enlarging step being carried out so as to enlarge said at least one pattern along a plane wherein extends mainly the layer to be etched; b2) a step of modifying at least one zone (411', 411") of the layer to be etched by implanting ions to the right of the at least one enlarged pattern of said masking layer, the implantation being carried out over a depth less than the implantation depth of the preceding modification step; b1) a step of enlarging said at least one pattern of said masking layer, said masking layer having been conserved after the modification step in order to carry out the enlarging step, the enlarging step being carried out so as to enlarge said at least one pattern along a plane wherein extends mainly the layer to be etched; b2) a step of modifying at least one zone (411', 411") of the layer to be etched by implanting ions to the right of the at least one enlarged pattern of said masking layer, the implantation being carried out over a depth less than the implantation depth of the preceding modification step; c) a step of removing (461, 462) modified zones (411, 411', 411"), the removal comprising a step of etching modified zones (411, 411', 411") selectively at the non-modified zones of the layer to be etched, said etching step being a wet etching; and wherein: - either the masking layer is a hard mask, - or the masking layer comprises carbon and the stack comprises a buffer layer, the buffer layer being arranged between the masking layer comprising carbon and the layer to be etched, the buffer layer covering the layer to be etched during the implantation. - either the masking layer is a hard mask, - or the masking layer comprises carbon and the stack comprises a buffer layer, the buffer layer being arranged between the masking layer comprising carbon and the layer to be etched, the buffer layer covering the layer to be etched during the implantation.