A method for making a microelectronic unit (10, 110, 210, 310, 510), comprising the steps of: forming a plurality of wire bonds (32, 132, 232, 332, 432 532) on a first surface that is a conductive bonding surface of a patternable conductive material layer (28', 128') of a structure of the microelectronic unit (10, 110, 210, 310, 510), the conductive material layer (28', 128') extending in first and second transverse directions (15, 17) to define a general shape of the microelectronic unit, the wire bonds (32, 132, 232, 332, 432, 532) having bases (34, 134) joined to the first surface and end surfaces (38, 138) remote from the bases (34, 134) and remote from the first surface, the wire bonds (32, 132, 232, 332, 432, 532) further having edge surfaces extending between respective bases (34, 134) and respective end surfaces (38, 138); forming a dielectric encapsulation layer (42, 142, 242, 342, 442, 542) over at least a portion of the first surface of the conductive material layer (28', 128') and over portions of the wire bonds (32, 132, 232, 332, 432, 532), such that unencapsulated portions of the wire bonds (32, 132, 232, 332, 432, 532) are defined by at least one of the end surface (38, 138) or a portion of the edge surface thereof that is uncovered by the dielectric encapsulation layer (42, 142, 242, 342, 442, 542); and then removing portions of the conductive material layer (28', 128') such that portions of said conductive material layer remain as first conductive elements (28, 31; 131; 228, 231; 331; 431) insulated from one another by at least portions of the dielectric encapsulation layer (42, 142, 242, 342, 442, 542), wherein at least some of the wire bonds (32, 132, 232, 332, 432, 532) are disposed atop the first conductive elements (28, 31; 131; 228, 231; 331; 431); wherein a first microelectronic element (22, 122, 222A, 322A, 422A, 522) is included in the structure and remains electrically connected with the conductive material layer (28', 128') when the step of removing portions of the conductive material layer is performed. forming a plurality of wire bonds (32, 132, 232, 332, 432 532) on a first surface that is a conductive bonding surface of a patternable conductive material layer (28', 128') of a structure of the microelectronic unit (10, 110, 210, 310, 510), the conductive material layer (28', 128') extending in first and second transverse directions (15, 17) to define a general shape of the microelectronic unit, the wire bonds (32, 132, 232, 332, 432, 532) having bases (34, 134) joined to the first surface and end surfaces (38, 138) remote from the bases (34, 134) and remote from the first surface, the wire bonds (32, 132, 232, 332, 432, 532) further having edge surfaces extending between respective bases (34, 134) and respective end surfaces (38, 138); forming a dielectric encapsulation layer (42, 142, 242, 342, 442, 542) over at least a portion of the first surface of the conductive material layer (28', 128') and over portions of the wire bonds (32, 132, 232, 332, 432, 532), such that unencapsulated portions of the wire bonds (32, 132, 232, 332, 432, 532) are defined by at least one of the end surface (38, 138) or a portion of the edge surface thereof that is uncovered by the dielectric encapsulation layer (42, 142, 242, 342, 442, 542); and then removing portions of the conductive material layer (28', 128') such that portions of said conductive material layer remain as first conductive elements (28, 31; 131; 228, 231; 331; 431) insulated from one another by at least portions of the dielectric encapsulation layer (42, 142, 242, 342, 442, 542), wherein at least some of the wire bonds (32, 132, 232, 332, 432, 532) are disposed atop the first conductive elements (28, 31; 131; 228, 231; 331; 431); wherein a first microelectronic element (22, 122, 222A, 322A, 422A, 522) is included in the structure and remains electrically connected with the conductive material layer (28', 128') when the step of removing portions of the conductive material layer is performed.