A power semiconductor device comprising: - a semiconductor body, - source regions of a first conductivity type in the semiconductor body at a top side thereof, - at least one channel region of a second conductivity type in the semiconductor body below the source regions, - a plurality of plugs of the second conductivity type in the semiconductor body at the top side of the semiconductor body, said plugs providing electric contact paths from the top side to the at least one channel region, It - a drift region of the first conductivity type in the semiconductor body below the at least one channel region, - at least one trench running from the top side through the source regions and through the at least one channel region and ending in the drift region, and - a shield region which is of the second conductivity type and which is located below at least a part of the bottom side of the at least one trench, wherein - the at least one trench accommodates a gate electrode which is electrically separated from the semiconductor body by means of a gate insulator, - seen in top view of the top side, the at least one trench comprises non-linearly running side walls, - seen in top view of the top side, the at least one trench comprises a plurality of branch-offs and comprises a central pipe running straightly, each of the plurality of branch-offs branches from the central pipe, the shield region extends at least partially below at least one of the branch-offs, - the shield region is limited to the branch-offs so that at least 90% of an area of the central pipe is free of the shield region, seen in top view of the top side, and - seen in top view of the top side, there are straight strips next to the at least one trench, the at least one trench is located between two adjacent straight strips, in the straight strips, portions of the at least one source region and plugs of the second conductivity type are arranged in an alternating manner, - the plugs and the at least one channel region are connected, - the source regions are disposed at front ends of the branch-offs so that at corners of the branch-offs close to the strips, the plugs touch the trench, or the source regions between adjacent branch-offs merge with the source regions in the strips so that one continuous source region per side wall is provided, - areas between adjacent branch-offs are composed of the source regions, and - branch-offs are provided on both sides of central pipe, so that each side wall comprises a plurality of branch-offs. - a semiconductor body, - source regions of a first conductivity type in the semiconductor body at a top side thereof, - at least one channel region of a second conductivity type in the semiconductor body below the source regions, - a plurality of plugs of the second conductivity type in the semiconductor body at the top side of the semiconductor body, said plugs providing electric contact paths from the top side to the at least one channel region, It - a drift region of the first conductivity type in the semiconductor body below the at least one channel region, - at least one trench running from the top side through the source regions and through the at least one channel region and ending in the drift region, and - a shield region which is of the second conductivity type and which is located below at least a part of the bottom side of the at least one trench, - the at least one trench accommodates a gate electrode which is electrically separated from the semiconductor body by means of a gate insulator, - seen in top view of the top side, the at least one trench comprises non-linearly running side walls, - seen in top view of the top side, the at least one trench comprises a plurality of branch-offs and comprises a central pipe running straightly, each of the plurality of branch-offs branches from the central pipe, the shield region extends at least partially below at least one of the branch-offs, - the shield region is limited to the branch-offs so that at least 90% of an area of the central pipe is free of the shield region, seen in top view of the top side, and - seen in top view of the top side, there are straight strips next to the at least one trench, the at least one trench is located between two adjacent straight strips, in the straight strips, portions of the at least one source region and plugs of the second conductivity type are arranged in an alternating manner, - the plugs and the at least one channel region are connected, - the source regions are disposed at front ends of the branch-offs so that at corners of the branch-offs close to the strips, the plugs touch the trench, or the source regions between adjacent branch-offs merge with the source regions in the strips so that one continuous source region per side wall is provided, - areas between adjacent branch-offs are composed of the source regions, and - branch-offs are provided on both sides of central pipe, so that each side wall comprises a plurality of branch-offs.