A single-crystal production equipment comprising, at least: a transparent quartz tube, in which a seed crystal is placed; a powder raw material supply apparatus, which is arranged above said transparent quartz tube and supplies a powder raw material onto said seed crystal placed in said transparent quartz tube; and an infrared ray irradiation apparatus, which is arranged outside said transparent quartz tube and applies an infrared ray to the upper surface of said seed crystal placed in said transparent quartz tube as well as said powder raw material supplied into said transparent quartz tube by said powder raw material supply apparatus, wherein said single-crystal production equipment is configured to produce a single crystal by applying said infrared ray from said infrared ray irradiation apparatus into said transparent quartz tube so as to melt an upper surface of said seed crystal and said powder raw material and subsequently solidifying the resulting melt on said seed crystal and wherein said infrared ray irradiation apparatus is configured to apply said infrared ray to within 90% of a diameter of said seed crystal, wherein said infrared ray irradiation apparatus comprises: an elliptical reflector whose inner surface is used as a reflection surface; and an infrared lamp which is arranged at a first focus position on a bottom side of said elliptical reflector, or wherein said infrared ray irradiation apparatus is a semiconductor laser module which applies a laser beam of said infrared ray. a transparent quartz tube, in which a seed crystal is placed; a powder raw material supply apparatus, which is arranged above said transparent quartz tube and supplies a powder raw material onto said seed crystal placed in said transparent quartz tube; and an infrared ray irradiation apparatus, which is arranged outside said transparent quartz tube and applies an infrared ray to the upper surface of said seed crystal placed in said transparent quartz tube as well as said powder raw material supplied into said transparent quartz tube by said powder raw material supply apparatus, wherein said single-crystal production equipment is configured to produce a single crystal by applying said infrared ray from said infrared ray irradiation apparatus into said transparent quartz tube so as to melt an upper surface of said seed crystal and said powder raw material and subsequently solidifying the resulting melt on said seed crystal and wherein said infrared ray irradiation apparatus is configured to apply said infrared ray to within 90% of a diameter of said seed crystal, wherein said infrared ray irradiation apparatus comprises: an elliptical reflector whose inner surface is used as a reflection surface; and an infrared lamp which is arranged at a first focus position on a bottom side of said elliptical reflector, or wherein said infrared ray irradiation apparatus is a semiconductor laser module which applies a laser beam of said infrared ray. an elliptical reflector whose inner surface is used as a reflection surface; and an infrared lamp which is arranged at a first focus position on a bottom side of said elliptical reflector, or wherein said infrared ray irradiation apparatus is a semiconductor laser module which applies a laser beam of said infrared ray.