A memory device, comprising: an array (100, 500) of memory cells (111-1,..., 111-N); and control circuitry, coupled to the array (100, 500), which control circuitry is configured to: perform a number of sense operations on the memory cells (111-1,..., 111-N) using a number of different sensing voltages (327-0, 327-1, 327-2, 327-3, 327-4) to determine soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) associated with a target state of the memory cells (111-1,..., 111-N), wherein the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) is an indication of a reliability that the target state of the memory cells (111-1,...,111-N) is within a threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2) associated with the target state, and indicates a strong, a moderate, or a weak probability of whether a number of threshold voltages associated with the memory cells (111-1,..., 111-N) correspond to the target state, based on a location of the number of threshold voltages within the threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2); and store the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6); characterised in that the control circuitry is further configured to: perform, in response to a failure of an error correction operation performed on data associated with a determined state of the memory cells (111-1,..., 111-N), an error correction operation on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) stored prior to the failure; and adjust a sensing voltage used to determine the target state if the error correction operation performed on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6), stored prior to the failure, does not itself result in a failure. an array (100, 500) of memory cells (111-1,..., 111-N); and control circuitry, coupled to the array (100, 500), which control circuitry is configured to: perform a number of sense operations on the memory cells (111-1,..., 111-N) using a number of different sensing voltages (327-0, 327-1, 327-2, 327-3, 327-4) to determine soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) associated with a target state of the memory cells (111-1,..., 111-N), wherein the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) is an indication of a reliability that the target state of the memory cells (111-1,...,111-N) is within a threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2) associated with the target state, and indicates a strong, a moderate, or a weak probability of whether a number of threshold voltages associated with the memory cells (111-1,..., 111-N) correspond to the target state, based on a location of the number of threshold voltages within the threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2); and store the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6); perform a number of sense operations on the memory cells (111-1,..., 111-N) using a number of different sensing voltages (327-0, 327-1, 327-2, 327-3, 327-4) to determine soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) associated with a target state of the memory cells (111-1,..., 111-N), wherein the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) is an indication of a reliability that the target state of the memory cells (111-1,...,111-N) is within a threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2) associated with the target state, and indicates a strong, a moderate, or a weak probability of whether a number of threshold voltages associated with the memory cells (111-1,..., 111-N) correspond to the target state, based on a location of the number of threshold voltages within the threshold voltage distribution (225-0, 225-1, 225-2, 225-3, 325-1, 325-2); and store the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6); characterised in that the control circuitry is further configured to: perform, in response to a failure of an error correction operation performed on data associated with a determined state of the memory cells (111-1,..., 111-N), an error correction operation on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) stored prior to the failure; and adjust a sensing voltage used to determine the target state if the error correction operation performed on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6), stored prior to the failure, does not itself result in a failure. perform, in response to a failure of an error correction operation performed on data associated with a determined state of the memory cells (111-1,..., 111-N), an error correction operation on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6) stored prior to the failure; and adjust a sensing voltage used to determine the target state if the error correction operation performed on the determined soft data (329-1, 329-2, 329-3, 329-4, 329-5, 329-6), stored prior to the failure, does not itself result in a failure.