A method for manufacturing a light-emitting diode, which comprises the steps of: providing a substrate having a plurality of protruded portions and recess portions therebetween, on one main surface thereof wherein the protruded portion is made of a material different in type from that of said substrate, initiating the growth of a first nitride-based III-V Group compound semiconductor layer by producing a plurality of micronuclei made of nitride-based III-V Group compound semiconductor at the bottom surface of each recess portion, continuing the growth of the first nitride-based III-V Group compound semiconductor layer on each recess portion of said substrate said first nitride-based III-V Group compound semiconductor layer on each recess portion being formed as an isosceles triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on said substrate from said first nitride-based III-V Group compound semiconductor layer; and successively growing a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type on said second nitride-based III-V Group compound semiconductor layer, characterised in that, during the course of the growth of said first nitride-based III-V Group compound semiconductor layer, the plurality of micronuclei are grown and combined to form the isosceles triangle in section, and dislocations in the micronuclei generated from an interface with the bottom surface of said recess in a direction vertical to the one main surface are bent in a direction parallel to the one main surface. providing a substrate having a plurality of protruded portions and recess portions therebetween, on one main surface thereof wherein the protruded portion is made of a material different in type from that of said substrate, initiating the growth of a first nitride-based III-V Group compound semiconductor layer by producing a plurality of micronuclei made of nitride-based III-V Group compound semiconductor at the bottom surface of each recess portion, continuing the growth of the first nitride-based III-V Group compound semiconductor layer on each recess portion of said substrate said first nitride-based III-V Group compound semiconductor layer on each recess portion being formed as an isosceles triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on said substrate from said first nitride-based III-V Group compound semiconductor layer; and successively growing a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type on said second nitride-based III-V Group compound semiconductor layer, characterised in that, during the course of the growth of said first nitride-based III-V Group compound semiconductor layer, the plurality of micronuclei are grown and combined to form the isosceles triangle in section, and dislocations in the micronuclei generated from an interface with the bottom surface of said recess in a direction vertical to the one main surface are bent in a direction parallel to the one main surface.