A circular memory device, comprising: a plurality of bottom electrodes comprising a plurality of bottom electrode contact pads and a plurality of bottom electrode extended members, wherein: each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members; each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the memory device; and a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline; a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members, wherein: each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members. each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members; each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the memory device; and a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline; a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members, wherein: each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members. each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members; each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius; each of the plurality of top electrode extended members cross over every bottom electrode extended member of the plurality of bottom electrode extended members at a crossover point, a memory storage location being positioned at every crossover point; and a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members.