A method for blocking one or more portions of one or more longitudinal through-holes during manufacture of a semiconductor structure, wherein the blocking of a through-hole portion creates two new through-holes out of the original through-hole, comprising the steps of: i. forming a stack comprising: a. A hard mask having a thickness and comprising at least one longitudinal through-hole having a width, a length, and a depth corresponding to the thickness of the hard mask, and b. A first coating (6, 11) filling the at least one longitudinal through-hole and coating the hard mask, wherein the first coating (6, 11) comprises one or more materials (6, 11) that can be etched selectively with respect to a second coating, ii. Etching a vertical via in said first coating (6, 11) directly above a portion to be blocked of a longitudinal through-hole in such a way as to remove the first coating (6, 11) from the portion of the longitudinal through-hole over at least a fraction of the depth of the longitudinal through-hole, wherein the via is of lateral dimension larger or equal to the width of the longitudinal through-hole comprising the portion and of longitudinal dimension equal to the longitudinal dimension of the portion, iii. Filling at least partially the portion to be blocked, with the second coating, thereby providing a longitudinal through hole with a blocked portion creating two new through-holes out of the original through-hole, and iv. Removing the first coating (6, 11) selectively with respect to the second coating from at least the one or more longitudinal through-holes in such a way as to leave in place any of the first coating (6, 11) present directly underneath the second coating. i. forming a stack comprising: a. A hard mask having a thickness and comprising at least one longitudinal through-hole having a width, a length, and a depth corresponding to the thickness of the hard mask, and b. A first coating (6, 11) filling the at least one longitudinal through-hole and coating the hard mask, wherein the first coating (6, 11) comprises one or more materials (6, 11) that can be etched selectively with respect to a second coating, a. A hard mask having a thickness and comprising at least one longitudinal through-hole having a width, a length, and a depth corresponding to the thickness of the hard mask, and b. A first coating (6, 11) filling the at least one longitudinal through-hole and coating the hard mask, wherein the first coating (6, 11) comprises one or more materials (6, 11) that can be etched selectively with respect to a second coating, ii. Etching a vertical via in said first coating (6, 11) directly above a portion to be blocked of a longitudinal through-hole in such a way as to remove the first coating (6, 11) from the portion of the longitudinal through-hole over at least a fraction of the depth of the longitudinal through-hole, wherein the via is of lateral dimension larger or equal to the width of the longitudinal through-hole comprising the portion and of longitudinal dimension equal to the longitudinal dimension of the portion, iii. Filling at least partially the portion to be blocked, with the second coating, thereby providing a longitudinal through hole with a blocked portion creating two new through-holes out of the original through-hole, and iv. Removing the first coating (6, 11) selectively with respect to the second coating from at least the one or more longitudinal through-holes in such a way as to leave in place any of the first coating (6, 11) present directly underneath the second coating.