Circuit arrangement for protecting a receiving module or subsequent circuit electronics, comprising the following features: an amplifier (no) with an input and an output, which is couplable to the subsequent circuit electronics, wherein the amplifier (no) is contained in the receiving module and has a connection for a supply voltage (Vd), a connection for a control voltage (Vg), and a ground; a control module configured to output a control signal in a potentially critical state for the amplifier or for the receiving module or for the subsequent circuit electronics; a shutdown device configured to shut down the amplifier (no) in response to the control signal, wherein the shut-down amplifier (no) does not amplify signals at the input but attenuates the signals at the input through partial or complete absorption or reflection; and wherein the amplifier (no) comprises a transistor that provides a current path between the connection for the supply voltage (Vd) and the ground, wherein the current path is controllable via an input signal at the input and via the control voltage (Vg), and wherein the shutdown device is configured to prevent current flow along the current path through the transistor when shutting down, wherein the potentially critical state is an overdrive of the amplifier or an exceeding of a threshold for a signal level at the output of the amplifier (no), and the control signal comprises a first control signal (Vg,ctrl) and a second control signal (Vd,ctrl), and the shutdown device comprises a first modulator and a second modulator, wherein the first modulator is configured to set the control voltage (Vg) to a zero potential in response to the first control signal (Vg,ctrl), and the second modulator is configured to set the supply voltage (Vd) to a zero potential in response to the second control signal (Vd,ctrl), wherein the control voltage (Vg) is controllable via a variable series resistor (Rg) or wherein a variable series resistor (Rg) is coupled between the control voltage (Vg) and a gate of the transistor, wherein the control module is configured to reduce a resistance value of the variable series resistor (Rg) during the critical state. an amplifier (no) with an input and an output, which is couplable to the subsequent circuit electronics, wherein the amplifier (no) is contained in the receiving module and has a connection for a supply voltage (Vd), a connection for a control voltage (Vg), and a ground; a control module configured to output a control signal in a potentially critical state for the amplifier or for the receiving module or for the subsequent circuit electronics; a shutdown device configured to shut down the amplifier (no) in response to the control signal, wherein the shut-down amplifier (no) does not amplify signals at the input but attenuates the signals at the input through partial or complete absorption or reflection; and wherein the amplifier (no) comprises a transistor that provides a current path between the connection for the supply voltage (Vd) and the ground, wherein the current path is controllable via an input signal at the input and via the control voltage (Vg), and wherein the shutdown device is configured to prevent current flow along the current path through the transistor when shutting down, wherein the potentially critical state is an overdrive of the amplifier or an exceeding of a threshold for a signal level at the output of the amplifier (no), and the control signal comprises a first control signal (Vg,ctrl) and a second control signal (Vd,ctrl), and the shutdown device comprises a first modulator and a second modulator, wherein the first modulator is configured to set the control voltage (Vg) to a zero potential in response to the first control signal (Vg,ctrl), and the second modulator is configured to set the supply voltage (Vd) to a zero potential in response to the second control signal (Vd,ctrl), wherein the control voltage (Vg) is controllable via a variable series resistor (Rg) or wherein a variable series resistor (Rg) is coupled between the control voltage (Vg) and a gate of the transistor, wherein the control module is configured to reduce a resistance value of the variable series resistor (Rg) during the critical state.