A one-piece device (100; 200; 300; 400; 500; 600; 700; 800) for detecting particles with semiconductor material comprising: - a substrate layer (102; 202; 302; 402; 502; 602; 702; 802) formed in the semiconductor material, - at least one additional layer (106, 108; 206, 208, 220; 306, 308, 320, 324; 406, 408, 420, 424, 428; 506, 508, 520, 524, 528, 532; 606, 608, 620, 624, 628, 632; 706, 708, 720, 724, 728; 806, 808, 820, 824, 828, 832) formed in the semiconductor material and/or in at least one conductive material disposed on a first face of the substrate layer so as to form at least a first detector comprising: • a first electronic space charge zone (110; 210; 310; 410; 510; 610; 710, 710'; 810) through which a first axis of the detection device to be followed by a particle beam passes, and • first collector means with anode and cathode (106, 108; 206, 208; 306, 308; 406, 408; 506, 508; 606, 608; 706, 708; 806, 808) for collecting charge carriers produced by the particle beam passing through the first space charge zone, characterized in that it further comprises at least one other additional layer (114, 116; 214, 216, 222; 314, 316, 322, 326; 414, 416, 422, 426, 430; 514, 516, 522, 526, 530, 534; 614, 616, 622, 626, 630, 634; 714, 716, 722, 726, 730; 814, 816, 822, 826, 830, 834) formed in the semiconductor material and/or in said at least one conductive material disposed on a second face of the same substrate layer, opposite to the first face, so as to form at least a second detector independent of the first one from this same substrate layer and comprising: - a second electronic space charge zone (118; 218; 318; 418; 518; 618; 718, 718'; 818), through which a second axis of the detection device parallel to the first axis and intended to be also followed by the particle beam passes, and - second collector means with anode and cathode (114, 116; 214, 216; 314, 316; 414, 416; 514, 516; 614, 616; 714, 716; 814, 816) for collecting charge carriers produced by the particle beam passing through the second space charge zone, characterized in that said second collector means are electrically insulated from the first collector means to ensure independence of the first and second detectors. - a substrate layer (102; 202; 302; 402; 502; 602; 702; 802) formed in the semiconductor material, - at least one additional layer (106, 108; 206, 208, 220; 306, 308, 320, 324; 406, 408, 420, 424, 428; 506, 508, 520, 524, 528, 532; 606, 608, 620, 624, 628, 632; 706, 708, 720, 724, 728; 806, 808, 820, 824, 828, 832) formed in the semiconductor material and/or in at least one conductive material disposed on a first face of the substrate layer so as to form at least a first detector comprising: • a first electronic space charge zone (110; 210; 310; 410; 510; 610; 710, 710'; 810) through which a first axis of the detection device to be followed by a particle beam passes, and • first collector means with anode and cathode (106, 108; 206, 208; 306, 308; 406, 408; 506, 508; 606, 608; 706, 708; 806, 808) for collecting charge carriers produced by the particle beam passing through the first space charge zone, • a first electronic space charge zone (110; 210; 310; 410; 510; 610; 710, 710'; 810) through which a first axis of the detection device to be followed by a particle beam passes, and • first collector means with anode and cathode (106, 108; 206, 208; 306, 308; 406, 408; 506, 508; 606, 608; 706, 708; 806, 808) for collecting charge carriers produced by the particle beam passing through the first space charge zone, - a second electronic space charge zone (118; 218; 318; 418; 518; 618; 718, 718'; 818), through which a second axis of the detection device parallel to the first axis and intended to be also followed by the particle beam passes, and - second collector means with anode and cathode (114, 116; 214, 216; 314, 316; 414, 416; 514, 516; 614, 616; 714, 716; 814, 816) for collecting charge carriers produced by the particle beam passing through the second space charge zone, characterized in that said second collector means are electrically insulated from the first collector means to ensure independence of the first and second detectors.