A light emitting device comprising: a support substrate; a reflective ohmic contact layer on the support substrate; a functional complex layer including a process assisting region and a ohmic contact region, the ohmic contact region being divided into a plurality of unit cell regions by the process assisting region on the reflective ohmic contact layer; a light emitting semiconductor layer disposed on the functional complex layer and including a second conductivity type semiconductor layer, an active layer on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer on the active layer, the light emitting semiconductor layer being provided on each ohmic contact region; a passivation layer disposed at portions of lateral and top surfaces of the light emitting semiconductor layer; and a first electrode layer disposed on the first conductivity type semiconductor layer, wherein the process assisting region includes one selected from the group consisting of Al 2 O 3, SiN, TiO 2, ZrO 2, Si 3 N 4, and SiO 2 as an electric insulating material or a material forming a schottky contact interface with respect to the second conductivity type semiconductor layer, the first electrode layer is electrically connected to the light emitting semiconductor layers and is vertically overlapped with the process assisting region, and a portion of the first electrode layer is laterally overlapped with the light emitting semiconductor layer, a portion of the passivation layer is disposed on the process assisting region, and a portion of the first electrode layer is provided in the passivation layer, characterized in that the functional complex layer includes a current blocking region provided in each unit cell region of the ohmic contact region, in that the process assisting region is exposed from the light emitting semiconductor layer so that the light emitting semiconductor layer is divided into a plurality of unit structures, and in that the first electrode layer commonly makes contact with the plurality of unit structures of the first conductivity type semiconductor layer. a support substrate; a reflective ohmic contact layer on the support substrate; a functional complex layer including a process assisting region and a ohmic contact region, the ohmic contact region being divided into a plurality of unit cell regions by the process assisting region on the reflective ohmic contact layer; a light emitting semiconductor layer disposed on the functional complex layer and including a second conductivity type semiconductor layer, an active layer on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer on the active layer, the light emitting semiconductor layer being provided on each ohmic contact region; a passivation layer disposed at portions of lateral and top surfaces of the light emitting semiconductor layer; and a first electrode layer disposed on the first conductivity type semiconductor layer, wherein the process assisting region includes one selected from the group consisting of Al 2 O 3, SiN, TiO 2, ZrO 2, Si 3 N 4, and SiO 2 as an electric insulating material or a material forming a schottky contact interface with respect to the second conductivity type semiconductor layer, the first electrode layer is electrically connected to the light emitting semiconductor layers and is vertically overlapped with the process assisting region, and a portion of the first electrode layer is laterally overlapped with the light emitting semiconductor layer, a portion of the passivation layer is disposed on the process assisting region, and a portion of the first electrode layer is provided in the passivation layer,