A packaged radio frequency, RF, amplifier device (100, 500, 600, 800, 1000) comprising: a device substrate; an input lead (102, 502, 503) coupled to the device substrate; an output lead (104, 504, 505) coupled to the device substrate; a transistor die coupled to a top surface of the device substrate, the transistor die including a transistor (120, 522, 523, 622, 623, 822, 823, 1022, 1023) having a control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the control terminal is electrically coupled to the input lead (102, 502, 503); and an output impedance matching circuit (150, 550, 551) electrically coupled between the first current carrying terminal and the output lead (104, 504, 505), wherein the output impedance matching circuit (150, 550, 551) comprises a first shunt circuit (141, 540, 541) electrically coupled between the first current carrying terminal and the device substrate and wherein the first shunt circuit (141, 540, 541) comprises: a first capacitor (142, 542, 1042) having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and a first shunt inductor formed by a second plurality of bondwires (534, 1034) coupled between the first current carrying terminal and the first terminal of the first capacitor (142, 542, 1042); wherein the packaged RF amplifier device (100, 500, 600, 800, 1000) is characterized by a series circuit electrically coupled between the first current carrying terminal and the output lead (104, 504, 505), wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node (131, 538, 539, 638, 639, 838, 839, 1038, 1039), and a second inductive element coupled between the node (131, 538, 539, 638, 639, 838, 839, 1038, 1039) and the output lead (104, 504, 505), wherein the second inductive element includes a first plurality of bondwires (532, 533, 632, 633, 832, 833, 1032, 1033), wherein the first inductive element is in an integrated inductance (530, 531, 630, 631, 830, 831, 1030, 1031), wherein a height of the integrated inductance (530, 531, 630, 631, 830, 831, 1030, 1031) above the device substrate is near zero throughout its length such that the integrated inductance contributes zero or near zero inductive coupling to a net inductive coupling between the series circuit and the first shunt circuit. a device substrate; an input lead (102, 502, 503) coupled to the device substrate; an output lead (104, 504, 505) coupled to the device substrate; a transistor die coupled to a top surface of the device substrate, the transistor die including a transistor (120, 522, 523, 622, 623, 822, 823, 1022, 1023) having a control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the control terminal is electrically coupled to the input lead (102, 502, 503); and an output impedance matching circuit (150, 550, 551) electrically coupled between the first current carrying terminal and the output lead (104, 504, 505), wherein the output impedance matching circuit (150, 550, 551) comprises a first shunt circuit (141, 540, 541) electrically coupled between the first current carrying terminal and the device substrate and wherein the first shunt circuit (141, 540, 541) comprises: a first capacitor (142, 542, 1042) having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and a first shunt inductor formed by a second plurality of bondwires (534, 1034) coupled between the first current carrying terminal and the first terminal of the first capacitor (142, 542, 1042); a first capacitor (142, 542, 1042) having a first terminal and a second terminal, wherein the second terminal is electrically coupled to the device substrate; and a first shunt inductor formed by a second plurality of bondwires (534, 1034) coupled between the first current carrying terminal and the first terminal of the first capacitor (142, 542, 1042); wherein the packaged RF amplifier device (100, 500, 600, 800, 1000) is characterized by a series circuit electrically coupled between the first current carrying terminal and the output lead (104, 504, 505), wherein the series circuit includes a first inductive element coupled between the first current carrying terminal and a node (131, 538, 539, 638, 639, 838, 839, 1038, 1039), and a second inductive element coupled between the node (131, 538, 539, 638, 639, 838, 839, 1038, 1039) and the output lead (104, 504, 505), wherein the second inductive element includes a first plurality of bondwires (532, 533, 632, 633, 832, 833, 1032, 1033), wherein the first inductive element is in an integrated inductance (530, 531, 630, 631, 830, 831, 1030, 1031), wherein a height of the integrated inductance (530, 531, 630, 631, 830, 831, 1030, 1031) above the device substrate is near zero throughout its length such that the integrated inductance contributes zero or near zero inductive coupling to a net inductive coupling between the series circuit and the first shunt circuit.