A crystalline material processing method comprising: supplying emissions (36, 61) of a laser focused within an interior of a crystalline material of a substrate (62, 70, 180, 236), and effecting relative lateral movement between the laser and the substrate (62, 70, 180, 236), to form subsurface laser damage (40, 63) having a first subsurface laser damage pattern comprising a first plurality of substantially parallel lines (71, 81, 91, 101, 111, 121, 131, 145, 151, 156); and following formation of the first subsurface laser damage pattern, supplying laser emissions (36, 61) focused within the interior of the crystalline material, and effecting relative lateral movement between the laser and the substrate (62, 70, 180, 236), to form subsurface laser damage (40, 63) having a second subsurface laser damage pattern comprising a second plurality of substantially parallel lines (72, 82, 92, 102, 112, 122, 132, 147, 152, 157); wherein the first subsurface laser damage pattern forms a first plurality of cracks in the interior of the crystalline material propagating laterally outward from lines of the first plurality of substantially parallel lines; wherein the second subsurface laser damage pattern forms a second plurality of cracks in the interior of the crystalline material propagating laterally outward from lines of the second plurality of substantially parallel lines; wherein lines of the second plurality of substantially parallel lines are interspersed among lines of the first plurality of substantially parallel lines; and wherein at least some lines of the second plurality of substantially parallel lines do not cross any lines of the first plurality of substantially parallel lines. supplying emissions (36, 61) of a laser focused within an interior of a crystalline material of a substrate (62, 70, 180, 236), and effecting relative lateral movement between the laser and the substrate (62, 70, 180, 236), to form subsurface laser damage (40, 63) having a first subsurface laser damage pattern comprising a first plurality of substantially parallel lines (71, 81, 91, 101, 111, 121, 131, 145, 151, 156); and following formation of the first subsurface laser damage pattern, supplying laser emissions (36, 61) focused within the interior of the crystalline material, and effecting relative lateral movement between the laser and the substrate (62, 70, 180, 236), to form subsurface laser damage (40, 63) having a second subsurface laser damage pattern comprising a second plurality of substantially parallel lines (72, 82, 92, 102, 112, 122, 132, 147, 152, 157); wherein the first subsurface laser damage pattern forms a first plurality of cracks in the interior of the crystalline material propagating laterally outward from lines of the first plurality of substantially parallel lines; wherein the second subsurface laser damage pattern forms a second plurality of cracks in the interior of the crystalline material propagating laterally outward from lines of the second plurality of substantially parallel lines; wherein lines of the second plurality of substantially parallel lines are interspersed among lines of the first plurality of substantially parallel lines; and wherein at least some lines of the second plurality of substantially parallel lines do not cross any lines of the first plurality of substantially parallel lines.