A power semiconductor device comprising: a drift layer having a first conductivity type; a base layer (6; 26; 36; 46) provided on the drift layer and having a second conductivity type, which is different from the first conductivity type, the base layer (6; 26; 36; 46) forming a first p-n junction with the drift layer; a source layer provided on the base layer (6; 26; 36; 46) and having the first conductivity type, the base layer (6; 26; 36; 46) forming a second p-n junction with the source layer; a channel region having the second conductivity type and extending from the source layer to the drift layer, the channel region forming a third p-n junction with the source layer and a fourth p-n junction with the drift layer, and a trench gate structure for controlling an electrical conductivity of the channel region, the trench gate structure including an electrically conductive gate electrode and a gate insulation layer electrically insulating the gate electrode from the channel region, wherein a first local doping concentration is less than 1·10 17 cm -3 at all locations within the channel region, in the base layer (6; 26; 36; 46) a second local doping concentration is at least 1·10 17 cm -3 at all locations within the base layer (6; 26; 36; 46), the channel region and the base layer (6; 26; 36; 46) are in direct contact with each other, characterized in that L CH > 4 √ ε CH t CH t GI ε GI, wherein L CH is a channel length, wherein the channel length L CH is defined as a length of a shortest path from the third p-n junction to the fourth p-n junction along an interface between the channel region and the gate insulation layer, ε CH is a permittivity of the channel region, ε GI is a permittivity of the gate insulation layer, t CH is a thickness of the channel region in a direction perpendicular to an interface between the gate insulation layer and the channel region, and t GI is a thickness of the gate insulation layer in a direction perpendicular to the interface between the gate insulation layer and the channel region, wherein the mean value of the first local doping concentration in the channel region is less than 4·10 16 cm -3, and the thickness t CH of the channel region is in a range from 1 nm to 10 nm. a drift layer having a first conductivity type; a base layer (6; 26; 36; 46) provided on the drift layer and having a second conductivity type, which is different from the first conductivity type, the base layer (6; 26; 36; 46) forming a first p-n junction with the drift layer; a source layer provided on the base layer (6; 26; 36; 46) and having the first conductivity type, the base layer (6; 26; 36; 46) forming a second p-n junction with the source layer; a channel region having the second conductivity type and extending from the source layer to the drift layer, the channel region forming a third p-n junction with the source layer and a fourth p-n junction with the drift layer, and a trench gate structure for controlling an electrical conductivity of the channel region, the trench gate structure including an electrically conductive gate electrode and a gate insulation layer electrically insulating the gate electrode from the channel region, wherein a first local doping concentration is less than 1·10 17 cm -3 at all locations within the channel region, in the base layer (6; 26; 36; 46) a second local doping concentration is at least 1·10 17 cm -3 at all locations within the base layer (6; 26; 36; 46), the channel region and the base layer (6; 26; 36; 46) are in direct contact with each other, characterized in that L CH > 4 √ ε CH t CH t GI ε GI, wherein L CH is a channel length, wherein the channel length L CH is defined as a length of a shortest path from the third p-n junction to the fourth p-n junction along an interface between the channel region and the gate insulation layer, ε CH is a permittivity of the channel region, ε GI is a permittivity of the gate insulation layer, t CH is a thickness of the channel region in a direction perpendicular to an interface between the gate insulation layer and the channel region, and t GI is a thickness of the gate insulation layer in a direction perpendicular to the interface between the gate insulation layer and the channel region, wherein the mean value of the first local doping concentration in the channel region is less than 4·10 16 cm -3, and the thickness t CH of the channel region is in a range from 1 nm to 10 nm.