A two-electrode inverse diode die having a top semiconductor surface, a bottom semiconductor surface, and peripheral side edges (2,3), the die comprising: a bottomside P type silicon region that extends upward from the bottom semiconductor surface of the die that also extends laterally outwardly to the peripheral side edges (2,3) of the die; an N- type silicon region disposed over the bottomside P type silicon region; an N type depletion stopper region that extends downward from the top semiconductor surface and into the N- type silicon region; a P+ type charge carrier extraction region that extends downward from the top semiconductor surface and into the N type depletion stopper region; a plurality of N+ type contact regions disposed in a two-dimensional array and extending downward from the top semiconductor surface and into the N type depletion stopper region; an oxide layer disposed on the top semiconductor surface and laterally surrounding a cathode contact portion of the top semiconductor surface; a P type silicon peripheral sidewall region, in contact with the oxide layer, and that extends downward from the top semiconductor surface into the N-type silicon region, wherein the P type silicon peripheral sidewall region joins the bottomside P type silicon region thereby forming a P type isolation structure, wherein the P type silicon peripheral sidewall region also laterally rings the N-type silicon region and separates the N- type silicon region from the peripheral side edges (2,3)of the die; a topside metal electrode disposed directly on the cathode contact portion and in contact with the oxide layer, and disposed directly on the N+ type contact regions and on the P+ type charge carrier extraction region; a ring-shaped N+ type depletion stopper ring, wherein the N+ type depletion stopper ring extends downward from the top semiconductor surface, wherein the ring-shaped N+ type deletion stopper ring rings around the P+ type charge carrier extraction region laterally, wherein the N+ type depletion stopper ring has an outer peripheral boundary that bounds the N type depletion stopper region, wherein no part of the N+ type depletion stopper ring adjoins any N- type silicon of the N- type silicon region and wherein the topside metal electrode is separated from the N+ type depletion stopper ring by the oxide layer; and a bottomside metal electrode disposed on the bottom semiconductor surface of the die, wherein each of the N+ type contact regions is laterally surrounded by P+ type silicon of the P+ type charge carrier extraction region. a bottomside P type silicon region that extends upward from the bottom semiconductor surface of the die that also extends laterally outwardly to the peripheral side edges (2,3) of the die; an N- type silicon region disposed over the bottomside P type silicon region; an N type depletion stopper region that extends downward from the top semiconductor surface and into the N- type silicon region; a P+ type charge carrier extraction region that extends downward from the top semiconductor surface and into the N type depletion stopper region; a plurality of N+ type contact regions disposed in a two-dimensional array and extending downward from the top semiconductor surface and into the N type depletion stopper region; an oxide layer disposed on the top semiconductor surface and laterally surrounding a cathode contact portion of the top semiconductor surface; a P type silicon peripheral sidewall region, in contact with the oxide layer, and that extends downward from the top semiconductor surface into the N-type silicon region, wherein the P type silicon peripheral sidewall region joins the bottomside P type silicon region thereby forming a P type isolation structure, wherein the P type silicon peripheral sidewall region also laterally rings the N-type silicon region and separates the N- type silicon region from the peripheral side edges (2,3)of the die; a topside metal electrode disposed directly on the cathode contact portion and in contact with the oxide layer, and disposed directly on the N+ type contact regions and on the P+ type charge carrier extraction region; a ring-shaped N+ type depletion stopper ring, wherein the N+ type depletion stopper ring extends downward from the top semiconductor surface, wherein the ring-shaped N+ type deletion stopper ring rings around the P+ type charge carrier extraction region laterally, wherein the N+ type depletion stopper ring has an outer peripheral boundary that bounds the N type depletion stopper region, wherein no part of the N+ type depletion stopper ring adjoins any N- type silicon of the N- type silicon region and wherein the topside metal electrode is separated from the N+ type depletion stopper ring by the oxide layer; and a bottomside metal electrode disposed on the bottom semiconductor surface of the die, wherein each of the N+ type contact regions is laterally surrounded by P+ type silicon of the P+ type charge carrier extraction region.