A method of fabricating a display substrate, wherein the display substrate comprises: a base substrate; a plurality of thin film transistors on the base substrate; and an encapsulating layer on a side of the plurality of thin film transistors distal to the base substrate for encapsulating the display substrate; wherein a part of the encapsulating layer substantially surrounds at least a part of a side surface of the base substrate; the base substrate comprises a top surface, a bottom surface opposite to the top surface, and the side surface connecting the top surface and the bottom surface, the top surface being on a side of the bottom surface proximal to the plurality of thin film transistors, the bottom surface being on a side of the top surface distal to the plurality of thin film transistors; the encapsulating layer comprises a top part and a side part connected to the top part, the top part being on a side of the plurality of thin film transistors distal to the base substrate for encapsulating the display substrate; and the side part of the encapsulating layer encapsulates a side of the display substrate and substantially surrounds the side surface of the base substrate; characterized in that, the method comprises: forming a mother substrate on a support substrate; forming the plurality of thin film transistors; cutting the mother substrate to separate a portion of the mother substrate from a remainder of the mother substrate, thereby forming the base substrate; and subsequent to cutting the mother substrate, forming the encapsulating layer on the base substrate for encapsulating the display substrate; wherein forming the encapsulating layer comprises depositing an encapsulating material on the side of the plurality of thin film transistors distal to the base substrate; wherein cutting the mother substrate is performed to form the base substrate having the top surface, the bottom surface opposite to the top surface, and the side surface connecting the top surface and the bottom surface, the top surface being on the side of the bottom surface proximal to the plurality of thin film transistors, the bottom surface being on the side of the top surface distal to the plurality of thin film transistors; depositing the encapsulating material is performed to form the encapsulating layer having the top part and the side part connected to the top part, the top part being on the side of the plurality of thin film transistors distal to the base substrate for encapsulating the display substrate; the side part of the encapsulating layer is formed to encapsulate the side of the display substrate and substantially surrounds the side surface of the base substrate; and the top part and the side part are integrally formed; wherein prior to depositing the encapsulating material, the method further comprises: forming a plurality of organic light emitting diodes on the base substrate; the side part of the encapsulating layer substantially surrounds an entire perimeter of the side surface of the base substrate; a projection of the encapsulating layer on a plane containing the bottom surface of the base substrate substantially covers a projection of the base substrate on the plane containing the bottom surface of the base substrate; and a contact interface between the encapsulating layer and the base substrate is substantially on the side surface of the base substrate. forming a mother substrate on a support substrate; forming the plurality of thin film transistors; cutting the mother substrate to separate a portion of the mother substrate from a remainder of the mother substrate, thereby forming the base substrate; and subsequent to cutting the mother substrate, forming the encapsulating layer on the base substrate for encapsulating the display substrate; wherein forming the encapsulating layer comprises depositing an encapsulating material on the side of the plurality of thin film transistors distal to the base substrate; wherein cutting the mother substrate is performed to form the base substrate having the top surface, the bottom surface opposite to the top surface, and the side surface connecting the top surface and the bottom surface, the top surface being on the side of the bottom surface proximal to the plurality of thin film transistors, the bottom surface being on the side of the top surface distal to the plurality of thin film transistors; depositing the encapsulating material is performed to form the encapsulating layer having the top part and the side part connected to the top part, the top part being on the side of the plurality of thin film transistors distal to the base substrate for encapsulating the display substrate; the side part of the encapsulating layer is formed to encapsulate the side of the display substrate and substantially surrounds the side surface of the base substrate; and the top part and the side part are integrally formed; wherein prior to depositing the encapsulating material, the method further comprises: forming a plurality of organic light emitting diodes on the base substrate; the side part of the encapsulating layer substantially surrounds an entire perimeter of the side surface of the base substrate; a projection of the encapsulating layer on a plane containing the bottom surface of the base substrate substantially covers a projection of the base substrate on the plane containing the bottom surface of the base substrate; and a contact interface between the encapsulating layer and the base substrate is substantially on the side surface of the base substrate.