A system for inspecting and processing semiconductor wafers, the system comprising: an edge detection system for receiving each wafer that is to undergo a photolithography process in a photolithography system prior to the photolithography process being performed on such wafer wherein the edge detection system comprises: at least one illumination channel configured for directing one or more illumination beams towards an edge portion of the wafer, wherein such edge portion includes at least one side, a top and a bottom that are within a border region of the wafer, at least one collection module configured for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer in response to the one or more illumination beams, and an analyzer module configured for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer, wherein the defects comprise particles, cracks, or scratches; and a photolithography system for receiving from the edge detection system each wafer that has been found to be within specification, wherein the edge detection system is coupled in-line with the photolithography system, wherein the analyzer module of the edge detection system is further configured to determine an alignment position of each wafer based on the output radiation collected and sensed from an alignment notch on each wafer by the at least one collection module and wherein said analyzer module is further configured to provide the determined alignment position to the photolithography system, wherein the detected defects are located relative to the alignment notch of each wafer, wherein the photolithography system is operable to receive the alignment position of each wafer from the edge detection system and use the received alignment position to align the wafer relative to a reticle pattern when the wafer is loaded into the photolithography system. an edge detection system for receiving each wafer that is to undergo a photolithography process in a photolithography system prior to the photolithography process being performed on such wafer wherein the edge detection system comprises: at least one illumination channel configured for directing one or more illumination beams towards an edge portion of the wafer, wherein such edge portion includes at least one side, a top and a bottom that are within a border region of the wafer, at least one collection module configured for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer in response to the one or more illumination beams, and an analyzer module configured for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer, wherein the defects comprise particles, cracks, or scratches; and at least one illumination channel configured for directing one or more illumination beams towards an edge portion of the wafer, wherein such edge portion includes at least one side, a top and a bottom that are within a border region of the wafer, at least one collection module configured for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer in response to the one or more illumination beams, and an analyzer module configured for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer, wherein the defects comprise particles, cracks, or scratches; and a photolithography system for receiving from the edge detection system each wafer that has been found to be within specification, wherein the edge detection system is coupled in-line with the photolithography system, wherein the analyzer module of the edge detection system is further configured to determine an alignment position of each wafer based on the output radiation collected and sensed from an alignment notch on each wafer by the at least one collection module and wherein said analyzer module is further configured to provide the determined alignment position to the photolithography system, wherein the detected defects are located relative to the alignment notch of each wafer, wherein the photolithography system is operable to receive the alignment position of each wafer from the edge detection system and use the received alignment position to align the wafer relative to a reticle pattern when the wafer is loaded into the photolithography system.