A pixel in a complementary metal oxide semiconductor (CMOS) device having a photodiode (302, 228) formed by PIN layer and a first and second output terminal (332, 336) where neither terminal is connected to a fixed voltage supply comprising: a) a substrate; b) a first N-type region (N-; 434) formed in the substrate; c) at least a portion of the photodiode (302; 228) formed in a portion of the substrate surrounded by the first N-type region (N-; 434) and isolated from a portion of the substrate outside the first N-type region (N-; 434), the photodiode having a cathode and an anode; d) a second N-type region (N+; 438) formed in the portion of the substrate surrounded by the first N-type region, a first doping level of the first N-type region (N-; 434) being less than a second doping level of the second N-type region (N+; 438); e) the first output terminal connected to the second N-type region (N+; 438), the cathode of the photodiode being connected to the first output terminal; f) a first P-type region formed in the portion of the substrate surrounded by the first N-type region (N-; 434); g) the second output terminal connected to the first P-type region, the anode of the photodiode being connected to the second output terminal; h) a first transistor formed in the substrate with a source connected to the first N-type region (N-; 434), a gate, and a drain; i) the pixel being configured to detect light striking the photodiode (302, 228) in response to the first terminal being connected to a high-impedance, the second terminal being connected to a ground, and the first transistor being activated; and j) the pixel being configured to generate an electrical current to drive a load through the first terminal and second terminal in response to light striking the photodiode (228, 302), a connection of the load being to the first terminal and the second terminal, and deactivation of the first transistor; k) a second transistor formed in the substrate with a source connected to the drain of the first transistor; l) a third transistor formed in the substrate with a gate connected to the drain of the first transistor and the source of the second transistor; m) a fourth transistor formed in the substrate with a drain connected to a source of the third transistor; n) a fifth transistor formed in the substrate with a drain connected to a source of the fourth transistor; o) a capacitor formed in the substrate with a first terminal connected to the drain of the first transistor, source of the second transistor, and gate of the third transistor, the capacitor configured to receive a charge from the photodiode in response to the first transistor being activated. a) a substrate; b) a first N-type region (N-; 434) formed in the substrate; c) at least a portion of the photodiode (302; 228) formed in a portion of the substrate surrounded by the first N-type region (N-; 434) and isolated from a portion of the substrate outside the first N-type region (N-; 434), the photodiode having a cathode and an anode; d) a second N-type region (N+; 438) formed in the portion of the substrate surrounded by the first N-type region, a first doping level of the first N-type region (N-; 434) being less than a second doping level of the second N-type region (N+; 438); e) the first output terminal connected to the second N-type region (N+; 438), the cathode of the photodiode being connected to the first output terminal; f) a first P-type region formed in the portion of the substrate surrounded by the first N-type region (N-; 434); g) the second output terminal connected to the first P-type region, the anode of the photodiode being connected to the second output terminal; h) a first transistor formed in the substrate with a source connected to the first N-type region (N-; 434), a gate, and a drain; i) the pixel being configured to detect light striking the photodiode (302, 228) in response to the first terminal being connected to a high-impedance, the second terminal being connected to a ground, and the first transistor being activated; and j) the pixel being configured to generate an electrical current to drive a load through the first terminal and second terminal in response to light striking the photodiode (228, 302), a connection of the load being to the first terminal and the second terminal, and deactivation of the first transistor; k) a second transistor formed in the substrate with a source connected to the drain of the first transistor; l) a third transistor formed in the substrate with a gate connected to the drain of the first transistor and the source of the second transistor; m) a fourth transistor formed in the substrate with a drain connected to a source of the third transistor; n) a fifth transistor formed in the substrate with a drain connected to a source of the fourth transistor; o) a capacitor formed in the substrate with a first terminal connected to the drain of the first transistor, source of the second transistor, and gate of the third transistor, the capacitor configured to receive a charge from the photodiode in response to the first transistor being activated.