A method of preparing a single crystal silicon ingot by the Continuous Czochralski method, the method comprising: adding an initial charge of polycrystalline silicon to a crucible; heating the crucible comprising the initial charge of polycrystalline silicon to cause a silicon melt to form in the crucible, the silicon melt comprising an initial volume of molten silicon and having an initial melt elevation level; contacting a silicon seed crystal with a silicon melt; withdrawing the silicon seed crystal to grow a neck portion, wherein the silicon seed crystal is withdrawn at a neck portion pull rate during growth of the neck portion; withdrawing the silicon seed crystal to grow an outwardly flaring seed-cone adjacent the neck portion, wherein the silicon seed crystal is withdrawn at a seed-cone pull rate during growth of the outwardly flaring seed-cone; and withdrawing the silicon seed crystal to grow a main body of the single crystal silicon ingot adjacent the outwardly flaring seed-cone, wherein the silicon melt comprises a volume of molten silicon and a melt elevation level during growth of the main body of the single crystal silicon ingot; wherein the main body of the single crystal silicon ingot is grown at an initial variable main body pull rate and a constant main body pull rate, wherein the initial variable main body pull rate declines from a pull rate of between 0.5 mm/min and 2.0 mm/min to a minimum pull rate that may be as low as 0.3 mm/min and then rises to the constant main body pull rate, the constant main body pull rate being between 0.4 mm/min and 0.8 mm/min, wherein the pull rates are selected to achieve perfect silicon, wherein the main body of the single crystal silicon ingot is grown at the initial variable main body pull rate for less than 20% of the final length of the main body of the single crystal silicon ingot and grown at the constant main body pull rate during growth for at least 50% of the final length of the main body of the single crystal silicon ingot; wherein polycrystalline silicon is continuously fed to the crucible to thereby replenish a volume of molten silicon and melt elevation level in the crucible during growth of the main body of the single crystal silicon ingot; and wherein a magnetic field is applied to the silicon melt during growth of the main body of the single crystal silicon ingot. adding an initial charge of polycrystalline silicon to a crucible; heating the crucible comprising the initial charge of polycrystalline silicon to cause a silicon melt to form in the crucible, the silicon melt comprising an initial volume of molten silicon and having an initial melt elevation level; contacting a silicon seed crystal with a silicon melt; withdrawing the silicon seed crystal to grow a neck portion, wherein the silicon seed crystal is withdrawn at a neck portion pull rate during growth of the neck portion; withdrawing the silicon seed crystal to grow an outwardly flaring seed-cone adjacent the neck portion, wherein the silicon seed crystal is withdrawn at a seed-cone pull rate during growth of the outwardly flaring seed-cone; and withdrawing the silicon seed crystal to grow a main body of the single crystal silicon ingot adjacent the outwardly flaring seed-cone, wherein the silicon melt comprises a volume of molten silicon and a melt elevation level during growth of the main body of the single crystal silicon ingot; wherein the main body of the single crystal silicon ingot is grown at an initial variable main body pull rate and a constant main body pull rate, wherein the initial variable main body pull rate declines from a pull rate of between 0.5 mm/min and 2.0 mm/min to a minimum pull rate that may be as low as 0.3 mm/min and then rises to the constant main body pull rate, the constant main body pull rate being between 0.4 mm/min and 0.8 mm/min, wherein the pull rates are selected to achieve perfect silicon, wherein the main body of the single crystal silicon ingot is grown at the initial variable main body pull rate for less than 20% of the final length of the main body of the single crystal silicon ingot and grown at the constant main body pull rate during growth for at least 50% of the final length of the main body of the single crystal silicon ingot; wherein polycrystalline silicon is continuously fed to the crucible to thereby replenish a volume of molten silicon and melt elevation level in the crucible during growth of the main body of the single crystal silicon ingot; and wherein a magnetic field is applied to the silicon melt during growth of the main body of the single crystal silicon ingot.