A power module comprising: a housing and a lid; a first sub-module and a second sub-module, each sub-module comprising: a power substrate mounted on a baseplate; a plurality of power semiconductor dies, each one of the power semiconductor dies being mounted to the power substrate and including drain, source and gate contact pads on the top side thereof for electrically connecting to the power semiconductor die and to a desired connection point through wire bonds; first connectors coupled to the power substrate and extending through openings provided in the lid; second connectors extending through openings provided in the lid; wherein the drain contact and the source contact of each one of the power semiconductor die are coupled to one of the first connectors and provide connection points for a high voltage and/or high current switching path provided by the power semiconductor die; each sub-module comprises first and second groups, each group comprising a plurality of semiconductor dies and a corresponding interconnect printed circuit board, PCB; the interconnect PCBs are fixed by a number of PCB connectors; the gate contact and the source contact of each power semiconductor die are coupled to one of the second connectors via one of the interconnect PCBs; the gate-source control connections for each power semiconductor die in a respective group are coupled together via a respective interconnect PCB; and the gate-source control connections between various ones of the groups are coupled together by removable jumpers such that a removable jumper couples adjacent interconnect PCBs in adjacent sub-modules. a housing and a lid; a first sub-module and a second sub-module, each sub-module comprising: a power substrate mounted on a baseplate; a plurality of power semiconductor dies, each one of the power semiconductor dies being mounted to the power substrate and including drain, source and gate contact pads on the top side thereof for electrically connecting to the power semiconductor die and to a desired connection point through wire bonds; first connectors coupled to the power substrate and extending through openings provided in the lid; second connectors extending through openings provided in the lid; wherein the drain contact and the source contact of each one of the power semiconductor die are coupled to one of the first connectors and provide connection points for a high voltage and/or high current switching path provided by the power semiconductor die; each sub-module comprises first and second groups, each group comprising a plurality of semiconductor dies and a corresponding interconnect printed circuit board, PCB; the interconnect PCBs are fixed by a number of PCB connectors; the gate contact and the source contact of each power semiconductor die are coupled to one of the second connectors via one of the interconnect PCBs; the gate-source control connections for each power semiconductor die in a respective group are coupled together via a respective interconnect PCB; and the gate-source control connections between various ones of the groups are coupled together by removable jumpers such that a removable jumper couples adjacent interconnect PCBs in adjacent sub-modules. a power substrate mounted on a baseplate; a plurality of power semiconductor dies, each one of the power semiconductor dies being mounted to the power substrate and including drain, source and gate contact pads on the top side thereof for electrically connecting to the power semiconductor die and to a desired connection point through wire bonds; first connectors coupled to the power substrate and extending through openings provided in the lid; second connectors extending through openings provided in the lid; wherein the drain contact and the source contact of each one of the power semiconductor die are coupled to one of the first connectors and provide connection points for a high voltage and/or high current switching path provided by the power semiconductor die; each sub-module comprises first and second groups, each group comprising a plurality of semiconductor dies and a corresponding interconnect printed circuit board, PCB; the interconnect PCBs are fixed by a number of PCB connectors; the gate contact and the source contact of each power semiconductor die are coupled to one of the second connectors via one of the interconnect PCBs; the gate-source control connections for each power semiconductor die in a respective group are coupled together via a respective interconnect PCB; and the gate-source control connections between various ones of the groups are coupled together by removable jumpers such that a removable jumper couples adjacent interconnect PCBs in adjacent sub-modules.