A method for producing a diode laser, having the following method steps: forming a first cladding layer, a first waveguide layer, an active layer, a second waveguide layer, and a second cladding layer, wherein at least one layer selected from the group of first cladding layer, first waveguide layer, second waveguide layer and second cladding layer has a first aluminium-containing layer; and forming a Bragg grating on or within the first aluminium-containing layer, wherein the formation of the Bragg grating comprises the following steps: (a) a continuous aluminium-free layer is deposited onto the first aluminium-containing layer within a reactor, and a continuous aluminium-free mask layer is subsequently deposited onto the aluminium-free layer such that the first aluminium-containing layer is completely covered by the continuous aluminium-free layer, (b) a resist mask is subsequently deposited onto the continuous mask layer and structured outside the reactor, and the continuous mask layer is subsequently structured by etching such that the mask layer corresponds or substantially corresponds to the structure of the resist mask, the aluminium-free layer is at least partially exposed and the aluminium-containing layer is completely covered by the aluminium-free layer (S104, S105), (c) the aluminium-free layer is subsequently structured within a reactor by impressing the structured mask layer by means of a gaseous etching medium such that the aluminium-free layer has a grid structure, and (d) a second layer is subsequently deposited within a reactor (S109, S113, S114, S115), characterised in that the aluminium-free layer is structured such that the aluminium-containing layer is not exposed by the aluminium-free layer before performing method step d) or the aluminium-free layer is completely etched away before performing method step d). forming a first cladding layer, a first waveguide layer, an active layer, a second waveguide layer, and a second cladding layer, wherein at least one layer selected from the group of first cladding layer, first waveguide layer, second waveguide layer and second cladding layer has a first aluminium-containing layer; and forming a Bragg grating on or within the first aluminium-containing layer, wherein the formation of the Bragg grating comprises the following steps: (a) a continuous aluminium-free layer is deposited onto the first aluminium-containing layer within a reactor, and a continuous aluminium-free mask layer is subsequently deposited onto the aluminium-free layer such that the first aluminium-containing layer is completely covered by the continuous aluminium-free layer, (b) a resist mask is subsequently deposited onto the continuous mask layer and structured outside the reactor, and the continuous mask layer is subsequently structured by etching such that the mask layer corresponds or substantially corresponds to the structure of the resist mask, the aluminium-free layer is at least partially exposed and the aluminium-containing layer is completely covered by the aluminium-free layer (S104, S105), (c) the aluminium-free layer is subsequently structured within a reactor by impressing the structured mask layer by means of a gaseous etching medium such that the aluminium-free layer has a grid structure, and (d) a second layer is subsequently deposited within a reactor (S109, S113, S114, S115), (a) a continuous aluminium-free layer is deposited onto the first aluminium-containing layer within a reactor, and a continuous aluminium-free mask layer is subsequently deposited onto the aluminium-free layer such that the first aluminium-containing layer is completely covered by the continuous aluminium-free layer, (b) a resist mask is subsequently deposited onto the continuous mask layer and structured outside the reactor, and the continuous mask layer is subsequently structured by etching such that the mask layer corresponds or substantially corresponds to the structure of the resist mask, the aluminium-free layer is at least partially exposed and the aluminium-containing layer is completely covered by the aluminium-free layer (S104, S105), (c) the aluminium-free layer is subsequently structured within a reactor by impressing the structured mask layer by means of a gaseous etching medium such that the aluminium-free layer has a grid structure, and (d) a second layer is subsequently deposited within a reactor (S109, S113, S114, S115), characterised in that the aluminium-free layer is structured such that the aluminium-containing layer is not exposed by the aluminium-free layer before performing method step d) or the aluminium-free layer is completely etched away before performing method step d).