A semiconductor package, the package comprising: - a semiconductor element comprising a first electric contact surface and a third electric contact surface on a first side and a second electric contact surface on a second side opposite to the first side, which first and third electric contact surfaces of the semiconductor element are electrically isolated from each other, and - a cap comprising a first side and a second side opposite to the first side, a cavity which is located at the first side of the cap and has a bottom wall and side walls (11, 12) and which is dimensioned to receive the semiconductor element, the cap further comprising a first conductive path comprising a first electric contact surface and a second conductive path comprising a second electric contact surface, which first and second electric contact surfaces (20,22) of the cap are isolated from each other, wherein the semiconductor element is fixed within the cavity, wherein the first electric contact surface of the semiconductor element and the first electric contact surface of the cap are electrically conductive bonded in a material-locking manner, and wherein the third electric contact surface of the semiconductor element and the second electric contact surface of the cap are electrically conductive bonded in a material-locking manner, wherein the first and second electric contact surfaces (20,22) of the cap are located at the inner side of the bottom wall of the cavity, characterized in that the first conductive path extends between the first electric contact surface located at the inner side of the bottom wall of the cavity and a third electric contact surface located at the first side of the cap outside of the cavity and the second conductive path extends between the second electric contact surface located at the inner side of the bottom wall of the cavity and a fourth electric contact surface located at the first side of the cap outside of the cavity and the first and the second conductive paths are routed along the inner side of the side walls of the cavity of the cap. - a semiconductor element comprising a first electric contact surface and a third electric contact surface on a first side and a second electric contact surface on a second side opposite to the first side, which first and third electric contact surfaces of the semiconductor element are electrically isolated from each other, and - a cap comprising a first side and a second side opposite to the first side, a cavity which is located at the first side of the cap and has a bottom wall and side walls (11, 12) and which is dimensioned to receive the semiconductor element, the cap further comprising a first conductive path comprising a first electric contact surface and a second conductive path comprising a second electric contact surface, which first and second electric contact surfaces (20,22) of the cap are isolated from each other, wherein the semiconductor element is fixed within the cavity, wherein the first electric contact surface of the semiconductor element and the first electric contact surface of the cap are electrically conductive bonded in a material-locking manner, and wherein the third electric contact surface of the semiconductor element and the second electric contact surface of the cap are electrically conductive bonded in a material-locking manner, wherein the first and second electric contact surfaces (20,22) of the cap are located at the inner side of the bottom wall of the cavity, characterized in that the first conductive path extends between the first electric contact surface located at the inner side of the bottom wall of the cavity and a third electric contact surface located at the first side of the cap outside of the cavity and the second conductive path extends between the second electric contact surface located at the inner side of the bottom wall of the cavity and a fourth electric contact surface located at the first side of the cap outside of the cavity and the first and the second conductive paths are routed along the inner side of the side walls of the cavity of the cap.