A semiconductor light emitting element, comprising: an optical semiconductor laminated layer that is obtained by stacking a first semiconductor layer including a GaN-based semiconductor of a first conductivity type, an active layer formed on the first semiconductor layer, having a light emitting property, and including a GaN-based semiconductor, and a second semiconductor layer formed on the active layer, and including a GaN-based semiconductor of a second conductivity type different from the first conductivity type, and in which when a surface on the first semiconductor layer side is a first surface and a surface on the second semiconductor side is a second surface, the second surface includes concave region formed by removing the second semiconductor layer and the active layer and and exposing the first semiconductor layer, and convex region surrounding the concave region and exposing the second semiconductor layer, wherein a part of the second semiconductor layer and the active layer positioned in an outside region of the optical semiconductor laminated layer has a higher resistance than another part of the second semiconductor layer and the active layer positioned in an inside region of the optical semiconductor laminated layer; a first electrode that is disposed on the concave region of the optical semiconductor laminated layer and that is in contact with the first semiconductor layer exposed in the concave region; a second electrode that is disposed on the convex region of the optical semiconductor laminated layer, that is separated from the second semiconductor layer in a peripheral portion of the second electrode, that is in contact with the second semiconductor layer in a region except for the peripheral portion of the second electrode, and that includes at least Ag; a first transparent insulating layer that is disposed between the peripheral portion of the second electrode and the second semiconductor layer of the optical semiconductor laminated layer, and that has a light transmitting property and an electrical insulating property; a second transparent insulating layer that is disposed to cover the second electrode, that envelops the peripheral portion of the second electrode together with the first transparent insulating layer, and that has a light transmitting property and an electrical insulating property; and a conductive layer that is disposed on the second transparent insulating layer, has a shape of including the second electrode in a plan view, and includes at least Ag. an optical semiconductor laminated layer that is obtained by stacking a first semiconductor layer including a GaN-based semiconductor of a first conductivity type, an active layer formed on the first semiconductor layer, having a light emitting property, and including a GaN-based semiconductor, and a second semiconductor layer formed on the active layer, and including a GaN-based semiconductor of a second conductivity type different from the first conductivity type, and in which when a surface on the first semiconductor layer side is a first surface and a surface on the second semiconductor side is a second surface, the second surface includes concave region formed by removing the second semiconductor layer and the active layer and and exposing the first semiconductor layer, and convex region surrounding the concave region and exposing the second semiconductor layer, wherein a part of the second semiconductor layer and the active layer positioned in an outside region of the optical semiconductor laminated layer has a higher resistance than another part of the second semiconductor layer and the active layer positioned in an inside region of the optical semiconductor laminated layer; a first electrode that is disposed on the concave region of the optical semiconductor laminated layer and that is in contact with the first semiconductor layer exposed in the concave region; a second electrode that is disposed on the convex region of the optical semiconductor laminated layer, that is separated from the second semiconductor layer in a peripheral portion of the second electrode, that is in contact with the second semiconductor layer in a region except for the peripheral portion of the second electrode, and that includes at least Ag; a first transparent insulating layer that is disposed between the peripheral portion of the second electrode and the second semiconductor layer of the optical semiconductor laminated layer, and that has a light transmitting property and an electrical insulating property; a second transparent insulating layer that is disposed to cover the second electrode, that envelops the peripheral portion of the second electrode together with the first transparent insulating layer, and that has a light transmitting property and an electrical insulating property; and a conductive layer that is disposed on the second transparent insulating layer, has a shape of including the second electrode in a plan view, and includes at least Ag.