An apparatus for super resolution imaging photolithography, comprising: an illumination light generation device configured to generate illumination light (302, 304, 513) which can pass through a mask comprising a mask substrate (102,305,501) and a mask pattern layer and then image the mask pattern included in the mask, wherein the far field illumination light (302, 304, 513) comprises a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern, wherein the illumination light generation device comprises a Surface Plasmon wave illumination light excitation structure (103, 502) located below the mask substrate but above the mask pattern layer configured to receive said far field illumination light beams (302, 304, 513) which are incident symmetrically in certain directions to generate a uniform SP wave illumination at a certain transmission wavelength, characterised in that the SP illumination light excitation structure (103, 502) comprises an excitation layer, provided on the mask substrate, and the excitation layer comprises a nano pattern that satisfies equations and: 2 ⁢ d × d s × n × sin θ + λ 0 = λ 0 d s λ sp × d s × n × sin θ + λ 0 = λ 0 × d s where d denotes a center-to-center pitch of dense lines in the mask pattern, d s denotes a grating period of the nano pattern of the excitation layer, θ denotes an incident angle of a central light ray of the far field illumination light beam (302, 304, 513) in the mask substrate (102, 305, 501), n denotes a refractive index of the mask substrate (102, 305, 501), λ 0 denotes a center wavelength of the far field illumination light beam (302, 304, 513), and λ sp denotes the wavelength of the excited SP. an illumination light generation device configured to generate illumination light (302, 304, 513) which can pass through a mask comprising a mask substrate (102,305,501) and a mask pattern layer and then image the mask pattern included in the mask, wherein the far field illumination light (302, 304, 513) comprises a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern, wherein the illumination light generation device comprises a Surface Plasmon wave illumination light excitation structure (103, 502) located below the mask substrate but above the mask pattern layer configured to receive said far field illumination light beams (302, 304, 513) which are incident symmetrically in certain directions to generate a uniform SP wave illumination at a certain transmission wavelength, characterised in that the SP illumination light excitation structure (103, 502) comprises an excitation layer, provided on the mask substrate, and the excitation layer comprises a nano pattern that satisfies equations and: 2 ⁢ d × d s × n × sin θ + λ 0 = λ 0 d s λ sp × d s × n × sin θ + λ 0 = λ 0 × d s where d denotes a center-to-center pitch of dense lines in the mask pattern, d s denotes a grating period of the nano pattern of the excitation layer, θ denotes an incident angle of a central light ray of the far field illumination light beam (302, 304, 513) in the mask substrate (102, 305, 501), n denotes a refractive index of the mask substrate (102, 305, 501), λ 0 denotes a center wavelength of the far field illumination light beam (302, 304, 513), and λ sp denotes the wavelength of the excited SP.