A light emitting device (100, 200), comprising: a light emitting structure divided into a plurality of light emitting regions (P1 ∼ P9) comprising a first semiconductor layer, an active layer and a second semiconductor layer and at least one boundary region disposed between the light emitting regions; a first electrode unit (150, 250) disposed on the first semiconductor layer in one of the light emitting regions; a second electrode unit (170, 272) disposed on the second semiconductor layer in another of the light emitting regions; at least one connection electrode (160-1 ∼ 160-8, 260-1 ∼ 260-8) to electrically connect the first semiconductor layer of one of adjacent light emitting regions to the second semiconductor layer of the other thereof; and an intermediate pad (182, 184, 252, 254) disposed on the first semiconductor layer or the second semiconductor layer in at least one of the light emitting regions, an insulating layer disposed in the light emitting regions (P1∼P8) and the boundary region, wherein the light emitting regions are connected in series through the connection electrode, wherein a part or entirety of light emitting regions (P1 ∼ P9) is configured to be driven by supplying power between the first electrode unit and either of the intermediate pad (182,184) or the second electrode unit according to driving voltage applied to the light emitting device (100, 200), in case that the intermediate pad (182,184) is disposed on the second semiconductor layer, or wherein a part or entirety of light emitting regions (P1 ∼ P9) is configured to be driven by supplying power between the second electrode unit and either of the intermediate pad (182,184) or the first electrode unit according to driving voltage applied to the light emitting device (100, 200), in case the intermediate pad (252,254) is disposed on the first semiconductor layer, wherein the connection electrode is disposed on the insulating layer, and characterised in that, the intermediate pad (182,184,252,254) is electrically isolated from the connection electrode on the insulating layer in the same light emitting region. a light emitting structure divided into a plurality of light emitting regions (P1 ∼ P9) comprising a first semiconductor layer, an active layer and a second semiconductor layer and at least one boundary region disposed between the light emitting regions; a first electrode unit (150, 250) disposed on the first semiconductor layer in one of the light emitting regions; a second electrode unit (170, 272) disposed on the second semiconductor layer in another of the light emitting regions; at least one connection electrode (160-1 ∼ 160-8, 260-1 ∼ 260-8) to electrically connect the first semiconductor layer of one of adjacent light emitting regions to the second semiconductor layer of the other thereof; and an intermediate pad (182, 184, 252, 254) disposed on the first semiconductor layer or the second semiconductor layer in at least one of the light emitting regions, an insulating layer disposed in the light emitting regions (P1∼P8) and the boundary region, wherein the light emitting regions are connected in series through the connection electrode, wherein a part or entirety of light emitting regions (P1 ∼ P9) is configured to be driven by supplying power between the first electrode unit and either of the intermediate pad (182,184) or the second electrode unit according to driving voltage applied to the light emitting device (100, 200), in case that the intermediate pad (182,184) is disposed on the second semiconductor layer, or wherein a part or entirety of light emitting regions (P1 ∼ P9) is configured to be driven by supplying power between the second electrode unit and either of the intermediate pad (182,184) or the first electrode unit according to driving voltage applied to the light emitting device (100, 200), in case the intermediate pad (252,254) is disposed on the first semiconductor layer, wherein the connection electrode is disposed on the insulating layer, and characterised in that, the intermediate pad (182,184,252,254) is electrically isolated from the connection electrode on the insulating layer in the same light emitting region.