Matrix optoelectronic device for an image sensor, comprising on a same insulating support substrate a matrix array of pixels aligned in rows and columns, formed in an active detection area and a driver circuit comprising transistors for the control of the pixel rows, formed in a peripheral area, each pixel comprising at least one transistor (Ts) which has a pixel selection transistor function, and an organic photodiode between a lower electrode specific to the pixel and connected to said at least one pixel transistor, and an upper electrode common to the pixels, and the optoelectronic device being formed by a stack of successive assemblies of layers on the dielectric support substrate, which comprises: - in the active matrix area: - a first assembly of thin films of transistors forming said at least one transistor (Ts) of the pixels, covered with an insulating passivation layer continuously extending over said first assembly, and - a second assembly of layers forming the organic photodiodes of the pixels and comprising a first conductive layer stack level which is a patterned level, supported by said passivation layer, forming the lower electrode in each pixel, a second stack level of a layer or layers of an active organic structure, and a third conductive layer stack level forming the upper electrode of the pixels extending above the active structure, and in each pixel, said first conductive layer stack level also forming in each pixel a light screen (LS i,j) covering at least the pixel transistor surface, and - in the peripheral area: - said first assembly of layers which forms said transistors (T G) of the driver circuit, - the first patterned conductive layer stack level supported by said passivation layer, which forms a light screen (LS GOA) extending continuously above said transistors (T G) of the driver circuit, and comprises a contacting area allowing a connection to an external bias voltage (Vbias), - the upper electrode of the pixels extends in the peripheral area to cover in direct electric contact said light screen (LS GOA), forming an interconnect for the biasing of the upper electrode to the voltage (Vbias). - in the active matrix area: - a first assembly of thin films of transistors forming said at least one transistor (Ts) of the pixels, covered with an insulating passivation layer continuously extending over said first assembly, and - a second assembly of layers forming the organic photodiodes of the pixels and comprising a first conductive layer stack level which is a patterned level, supported by said passivation layer, forming the lower electrode in each pixel, a second stack level of a layer or layers of an active organic structure, and a third conductive layer stack level forming the upper electrode of the pixels extending above the active structure, and in each pixel, said first conductive layer stack level also forming in each pixel a light screen (LS i,j) covering at least the pixel transistor surface, and - a first assembly of thin films of transistors forming said at least one transistor (Ts) of the pixels, covered with an insulating passivation layer continuously extending over said first assembly, and - a second assembly of layers forming the organic photodiodes of the pixels and comprising a first conductive layer stack level which is a patterned level, supported by said passivation layer, forming the lower electrode in each pixel, a second stack level of a layer or layers of an active organic structure, and a third conductive layer stack level forming the upper electrode of the pixels extending above the active structure, and in each pixel, said first conductive layer stack level also forming in each pixel a light screen (LS i,j) covering at least the pixel transistor surface, and - in the peripheral area: - said first assembly of layers which forms said transistors (T G) of the driver circuit, - the first patterned conductive layer stack level supported by said passivation layer, which forms a light screen (LS GOA) extending continuously above said transistors (T G) of the driver circuit, and comprises a contacting area allowing a connection to an external bias voltage (Vbias), - the upper electrode of the pixels extends in the peripheral area to cover in direct electric contact said light screen (LS GOA), forming an interconnect for the biasing of the upper electrode to the voltage (Vbias). - said first assembly of layers which forms said transistors (T G) of the driver circuit, - the first patterned conductive layer stack level supported by said passivation layer, which forms a light screen (LS GOA) extending continuously above said transistors (T G) of the driver circuit, and comprises a contacting area allowing a connection to an external bias voltage (Vbias), - the upper electrode of the pixels extends in the peripheral area to cover in direct electric contact said light screen (LS GOA), forming an interconnect for the biasing of the upper electrode to the voltage (Vbias).