A method for manufacturing single-crystal silicon using a multi-pulling method for pulling up a plurality of pieces of single-crystal silicon from a material melt in an identical crucible within a chamber by a Czochralski method, the method comprising the steps of: preparing said material melt in said crucible, wherein the crucible has a diameter of 60,96 cm (24 inches), 81,28 cm (32 inches) or 101,6 cm (40 inches), and a layer containing barium is formed on an inner wall of the crucible, and an amount of said barium is 2.2×10 14 atoms•cm -2 or more and 1.1×10 15 atoms•cm -2 or less in case the diameter of the crucible is 60,96 cm (24 inches), 5.4×10 13 atoms•cm -2 or more and 2.2×10 14 atoms•cm -2 or less in case the diameter of the crucible is 81,28 cm (32 inches), or 1.1×10 13 atoms•cm -2 or more and 5.4×10 13 atoms•cm -2 or less in case the diameter of the crucible is 101,6 cm (40 inches); pulling up a single-crystal silicon from said material melt; additionally charging a polycrystalline material into said material melt remaining after pulling up the single-crystal silicon and melting the polycrystalline material in said material melt while continuing heating of said material melt; and pulling up a next single-crystal silicon from said material melt having said polycrystalline material additionally charged and melted therein, wherein said step of additionally charging and melting the polycrystalline material and said step of pulling up the next single-crystal silicon are repeated one or more times, and wherein in at least one of said step of pulling up single-crystal silicon and said step of pulling up next single-crystal silicon, which is repeated one or more times, said single-crystal silicon is grown in a magnetic field. preparing said material melt in said crucible, wherein the crucible has a diameter of 60,96 cm (24 inches), 81,28 cm (32 inches) or 101,6 cm (40 inches), and a layer containing barium is formed on an inner wall of the crucible, and an amount of said barium is 2.2×10 14 atoms•cm -2 or more and 1.1×10 15 atoms•cm -2 or less in case the diameter of the crucible is 60,96 cm (24 inches), 5.4×10 13 atoms•cm -2 or more and 2.2×10 14 atoms•cm -2 or less in case the diameter of the crucible is 81,28 cm (32 inches), or 1.1×10 13 atoms•cm -2 or more and 5.4×10 13 atoms•cm -2 or less in case the diameter of the crucible is 101,6 cm (40 inches); pulling up a single-crystal silicon from said material melt; additionally charging a polycrystalline material into said material melt remaining after pulling up the single-crystal silicon and melting the polycrystalline material in said material melt while continuing heating of said material melt; and pulling up a next single-crystal silicon from said material melt having said polycrystalline material additionally charged and melted therein, wherein said step of additionally charging and melting the polycrystalline material and said step of pulling up the next single-crystal silicon are repeated one or more times, and wherein in at least one of said step of pulling up single-crystal silicon and said step of pulling up next single-crystal silicon, which is repeated one or more times, said single-crystal silicon is grown in a magnetic field.