A solar cell, comprising: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on a surface of the substrate, wherein the tunneling dielectric layer is disposed between the doped conductive layer and the substrate, the doped conductive layer has a doping element of an N type or a P type, the doped conductive layer has a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, and a doping concentration in the plurality of first heavily doped regions is greater than a doping concentration in other regions of the doped conductive layer except the plurality of first heavily doped regions; and a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; a plurality of electrodes spaced apart from each other and extending in a second direction, wherein the plurality of electrodes pass through the passivation layer to contact the doped conductive layer, and at least two of the plurality of first heavily doped regions are in contact with a same electrode, the substrate has a plurality of second heavily doped regions, a doping concentration in the plurality of second heavily doped regions is greater than a doping concentration in other regions of the substrate except the plurality of second heavily doped regions, each of the plurality of second heavily doped regions is aligned with a respective one of the plurality of first heavily doped regions, and the plurality of first heavily doped regions and the plurality of second heavily doped regions have doping elements of a same type, the tunneling dielectric layer has a plurality of third heavily doped regions extending through the tunneling dielectric layer along a thickness to contact the plurality of first heavily doped regions and the plurality of second heavily doped regions, respectively, each of the plurality of third heavily doped regions is aligned with a respective one of the plurality of first heavily doped regions, and the plurality of first heavily doped regions and the plurality of third heavily doped regions have doping elements of a same type, the solar cell is characterized in that, in a direction along which the plurality of first heavily doped regions are arranged, a width of each of the plurality of third heavily doped regions is larger than a width of a respective of the plurality of first heavily doped regions and is smaller than a width of a respective of the plurality of second heavily doped regions. a substrate; a tunneling dielectric layer and a doped conductive layer disposed on a surface of the substrate, wherein the tunneling dielectric layer is disposed between the doped conductive layer and the substrate, the doped conductive layer has a doping element of an N type or a P type, the doped conductive layer has a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, and a doping concentration in the plurality of first heavily doped regions is greater than a doping concentration in other regions of the doped conductive layer except the plurality of first heavily doped regions; and a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; a plurality of electrodes spaced apart from each other and extending in a second direction, wherein the plurality of electrodes pass through the passivation layer to contact the doped conductive layer, and at least two of the plurality of first heavily doped regions are in contact with a same electrode, the substrate has a plurality of second heavily doped regions, a doping concentration in the plurality of second heavily doped regions is greater than a doping concentration in other regions of the substrate except the plurality of second heavily doped regions, each of the plurality of second heavily doped regions is aligned with a respective one of the plurality of first heavily doped regions, and the plurality of first heavily doped regions and the plurality of second heavily doped regions have doping elements of a same type, the tunneling dielectric layer has a plurality of third heavily doped regions extending through the tunneling dielectric layer along a thickness to contact the plurality of first heavily doped regions and the plurality of second heavily doped regions, respectively, each of the plurality of third heavily doped regions is aligned with a respective one of the plurality of first heavily doped regions, and the plurality of first heavily doped regions and the plurality of third heavily doped regions have doping elements of a same type, the solar cell is characterized in that, in a direction along which the plurality of first heavily doped regions are arranged, a width of each of the plurality of third heavily doped regions is larger than a width of a respective of the plurality of first heavily doped regions and is smaller than a width of a respective of the plurality of second heavily doped regions.