A semiconductor light emitting device comprising: a semiconductor layer having a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer, said semiconductor layer including a first semiconductor layer and a second semiconductor layer; a first electrode provided on the second major surface of the semiconductor layer such that said first electrode contacts said first semiconductor layer; a second electrode provided on the second major surface of the semiconductor layer such that said second electrode contacts said second semiconductor layer, and including a silver layer; an insulating film provided on the second major surface side of the semiconductor layer and including a first opening and a second opening; a first interconnection provided on a part of a surface of the insulating film on an opposite side to the semiconductor layer and in the first opening and connected to the first electrode; a second interconnection provided on another part of the surface of the insulating film on the opposite side to the semiconductor layer and in the second opening and connected to the second electrode; a barrier metal layer provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode, and made of a metal material different from a metal material of the second electrode, the first interconnection, and the second interconnection; a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode; a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode; and a resin covering a periphery of the first metal pillar and a periphery of the second metal pillar and a phosphor layer provided on the first major surface side without a substrate being interposed between the first major surface and the phosphor layer. a semiconductor layer having a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer, said semiconductor layer including a first semiconductor layer and a second semiconductor layer; a first electrode provided on the second major surface of the semiconductor layer such that said first electrode contacts said first semiconductor layer; a second electrode provided on the second major surface of the semiconductor layer such that said second electrode contacts said second semiconductor layer, and including a silver layer; an insulating film provided on the second major surface side of the semiconductor layer and including a first opening and a second opening; a first interconnection provided on a part of a surface of the insulating film on an opposite side to the semiconductor layer and in the first opening and connected to the first electrode; a second interconnection provided on another part of the surface of the insulating film on the opposite side to the semiconductor layer and in the second opening and connected to the second electrode; a barrier metal layer provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode, and made of a metal material different from a metal material of the second electrode, the first interconnection, and the second interconnection; a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode; a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode; and a resin covering a periphery of the first metal pillar and a periphery of the second metal pillar and a phosphor layer provided on the first major surface side without a substrate being interposed between the first major surface and the phosphor layer.