A semiconductor transistor structure, comprising: a substrate of a first conductivity type; an epitaxial layer adjacent to said substrate, said epitaxial layer of said first conductivity type; a gate structure located above said epitaxial layer, a drain region of a second conductivity type within said epitaxial layer; a source region of said second conductivity type within said epitaxial layer; a channel formed between said source and drain region in said epitaxial layer, wherein said channel is at least partially arranged below said gate structure; a body structure of said first conductivity type within said epitaxial layer at least partially formed under said gate structure and extending laterally under said source region, wherein said epitaxial layer is less doped than said body structure, wherein said body structure is less doped than a first tub region; an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said first conductivity type substrate and passes through and contacts said second conductivity type source region, wherein the trench-like feed-through element comprises a barrier; said first tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure, and wherein said first tub region is in contact with said trench-like feed-through element; and a second tub region formed at least partially below said first tub region, wherein said second tub region is less doped than said first tub region, wherein said second tub region extends from said first tub region to and in contact with said substrate and wherein said second tub region is in contact with said trench-like feed-through element. a substrate of a first conductivity type; an epitaxial layer adjacent to said substrate, said epitaxial layer of said first conductivity type; a gate structure located above said epitaxial layer, a drain region of a second conductivity type within said epitaxial layer; a source region of said second conductivity type within said epitaxial layer; a channel formed between said source and drain region in said epitaxial layer, wherein said channel is at least partially arranged below said gate structure; a body structure of said first conductivity type within said epitaxial layer at least partially formed under said gate structure and extending laterally under said source region, wherein said epitaxial layer is less doped than said body structure, wherein said body structure is less doped than a first tub region; an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said first conductivity type substrate and passes through and contacts said second conductivity type source region, wherein the trench-like feed-through element comprises a barrier; said first tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure, and wherein said first tub region is in contact with said trench-like feed-through element; and a second tub region formed at least partially below said first tub region, wherein said second tub region is less doped than said first tub region, wherein said second tub region extends from said first tub region to and in contact with said substrate and wherein said second tub region is in contact with said trench-like feed-through element.