mhurhangee/ep-ind-claims huggingface dataset:
A semiconductor device, comprising: a secure memory configured to store a programmable key comprising a plurality of sub-keys; an interface for programming the programmable key in the secure memory; and a plurality of configurable features (24A, 24B, 24C, 24D) of the semiconductor device each being associated with one of said plurality of sub-keys of the programmable key, each configurable feature (24A, 24B, 24C, 24D) having a set of multiple selectable configurations; wherein a value of each sub-key defines a selection of one of the multiple configurations for a respective one of the configurable features (24A, 24B, 24C, 24D) associated with that sub-key, wherein the plurality of configurable features (24A, 24B, 24C, 24D) comprises at last one of a pinout configuration, a memory mapping of a memory of the semiconductor device, a test entry sequence, a peripheral set availability, an interrupt vector table location, and an SRAM start location. a secure memory configured to store a programmable key comprising a plurality of sub-keys; an interface for programming the programmable key in the secure memory; and a plurality of configurable features (24A, 24B, 24C, 24D) of the semiconductor device each being associated with one of said plurality of sub-keys of the programmable key, each configurable feature (24A, 24B, 24C, 24D) having a set of multiple selectable configurations; wherein a value of each sub-key defines a selection of one of the multiple configurations for a respective one of the configurable features (24A, 24B, 24C, 24D) associated with that sub-key, wherein the plurality of configurable features (24A, 24B, 24C, 24D) comprises at last one of a pinout configuration, a memory mapping of a memory of the semiconductor device, a test entry sequence, a peripheral set availability, an interrupt vector table location, and an SRAM start location.
A layered copper-containing oxide material, wherein the layered copper-containing oxide material has a general chemical formula of Na 0.68+a Ni b Cu c M d Mn e O 2+δ, wherein, Ni, Cu and Mn are transition metal elements, and M is an element that performs doping and substitution on transition metal complexation; Ni, Cu, Mn and M respectively form octahedral structures together with six oxygen atoms that are most adjacent thereto, and the multiple octahedral structures have arrangements with common edges and constitute transition metal layers; alkali metal ions Na + are located between every two of the transition metal layers; M is specifically one or more of Mg 2+, Mn 2+, Zn 2+, Co 2+, Al 3+, B 3+, Cr 3+, Mn 3+, Co 3+, V 3+, Zr 4+, Ti 4+, Sn 4+, Mo 4+, Ru 4+, Nb 4+, Sb 5+, Nb 5+, Mo 6+, and Te 6+; a valence of M is m, wherein m is specifically univalence, bivalence, trivalence, tetravalence, pentavalence or sexavalence; a, b, c, d, e and δ are respectively molar percentages occupied by corresponding elements; and relationships between a, b, c, d, e, δ, and m meet (0.68+a)+2(b+c)+md+4e=2(2+δ), and also meet b+c+d+e=1, wherein -0.08≤a≤0.08; 0<b≤0.38; 0<c≤0.38; 0≤d<0.36; 0<e≤0.7; and -0.02<δ<0.02.
A braking liquid pressure control device which includes a hydraulic unit where a motor is mounted on a first surface of the hydraulic unit and an antilock brake control is performed by controlling a liquid pressure of a braking liquid supplied to a braking part (111, 116), the braking liquid pressure control device being mounted on a vehicle body (60,61), wherein the braking liquid pressure control device comprises: a first support part which supports a second surface formed approximately perpendicular to the first surface of the hydraulic unit; a second support part which supports a third surface formed approximately perpendicular to the first surface and the second surface of the hydraulic unit respectively, and a bracket on which the first support part and the second support part are mounted, wherein the bracket includes a first plate part on which the first support part is mounted, a second plate part which is formed approximately perpendicular to the first plate part and a third plate part which is formed by bending with respect to the first plate part (41 a) and has a first fixing part for fixing the bracket to the vehicle body characterized in that the second plate part has a second fixing part for fixing the bracket to the vehicle body and on which the second support part is mounted, and in that the second fixing part (41 g), the first fixing part (41 f) and the center of gravity of the hydraulic unit are positioned approximately on one straight line. a first support part which supports a second surface formed approximately perpendicular to the first surface of the hydraulic unit; a second support part which supports a third surface formed approximately perpendicular to the first surface and the second surface of the hydraulic unit respectively, and a bracket on which the first support part and the second support part are mounted, wherein
Device for detecting the insulation resistance of a high-voltage battery system, preferably of a motor vehicle, comprising: - a high-voltage battery (HV Bat), which at the same time is the check source, - a high-voltage component (HV Komp), which is connected to the battery terminals (P+, P-) via switchable contactors (S Main+, S Main-), - a controller, wherein the following is provided in order to detect the insulation resistance: - a reference resistor (R 0), - switches (S Iso+, S Iso-) which can be operated via the controller in order to switch the reference resistor (R 0) selectively onto the terminals of the high-voltage battery (HV Bat), - a voltage measuring device for detecting the voltage present between the respective terminal and the reference potential of the vehicle (vehicle body) depending on the switch states, - a voltage measuring device for measuring the high voltage between the terminals (U Bat) of the high-voltage battery (HV Bat), - a coupling circuit for monitoring the external high-voltage component (HV Komp) when the contactors (S Main+, S Main-) are open, wherein the mid-point of the coupling circuit formed of two resistors (R Cpl) can be connected directly to one of the battery terminals (P+) or (P-) via a further switch (S Aux) which can be operated via the controller. - a high-voltage battery (HV Bat), which at the same time is the check source, - a high-voltage component (HV Komp), which is connected to the battery terminals (P+, P-) via switchable contactors (S Main+, S Main-), - a controller, - a reference resistor (R 0), - switches (S Iso+, S Iso-) which can be operated via the controller in order to switch the reference resistor (R 0) selectively onto the terminals of the high-voltage battery (HV Bat), - a voltage measuring device for detecting the voltage present between the respective terminal and the reference potential of the vehicle (vehicle body) depending on the switch states, - a voltage measuring device for measuring the high voltage between the terminals (U Bat) of the high-voltage battery (HV Bat), - a coupling circuit for monitoring the external high-voltage component (HV Komp) when the contactors (S Main+, S Main-) are open, wherein the mid-point of the coupling circuit formed of two resistors (R Cpl) can be connected directly to one of the battery terminals (P+) or (P-) via a further switch (S Aux) which can be operated via the controller.
A method for performing measurement by a UE supporting dual connectivity for a first network system and a second network system, the method comprising: receiving first information about a synchronization signal block for accessing a second cell of the second network system from a first cell of the first network system; measuring a time difference between a timing of the first cell and a timing of the second cell; transmitting information about the time difference to the first cell; characterised by receiving, from the first cell, second information updated with respect to the synchronization signal block of the first information, the second information being generated using the information about the time difference and the first information; and resetting a measurement gap for receiving the synchronization signal block on the basis of the second information. receiving first information about a synchronization signal block for accessing a second cell of the second network system from a first cell of the first network system; measuring a time difference between a timing of the first cell and a timing of the second cell; transmitting information about the time difference to the first cell; characterised by receiving, from the first cell, second information updated with respect to the synchronization signal block of the first information, the second information being generated using the information about the time difference and the first information; and resetting a measurement gap for receiving the synchronization signal block on the basis of the second information.
A fault current limiter blocking a fault current, the fault current limiter comprising: a measurement unit configured to measure an inflow current; a detector configured to detect an inflow of fault current from a current measured by the measurement unit, and transmit a turn-on signal to a first switch and a turn-off signal to a power semiconductor element; the power semiconductor element configured to receive the turn-off signal to be changed to an OFF state; the first switch configured to receive the turn-on signal to be changed to an ON state; and a resistance element configured to block the fault current, characterized in that: the fault current limiter further comprises a first power fuse connected to the first switch in series to temporarily cut off the fault current introduced, and the resistance element is connected to the first power fuse in parallel, wherein the parallel connection of the resistance element and the first power fuse is connected in series to the first switch. a measurement unit configured to measure an inflow current; a detector configured to detect an inflow of fault current from a current measured by the measurement unit, and transmit a turn-on signal to a first switch and a turn-off signal to a power semiconductor element; the power semiconductor element configured to receive the turn-off signal to be changed to an OFF state; the first switch configured to receive the turn-on signal to be changed to an ON state; and a resistance element configured to block the fault current,
Compounds of the general formula wherein the single elements T or P are amino acids, or amino acid residues, which are connected from the carbonyl (C=O) point of attachment to the nitrogen of the next element in clockwise direction and wherein said elements are connected to form cyclic peptides selected from cyclo(-Ala- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-Phe- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-His- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-His(Me)- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-Tyr- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-Arg- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-1Nal- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-2Na1- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Trp-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Ile-Trp-Arg- D Pro-Tic-); cyclo (-Trp- D His-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Arg-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Orn-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Phe-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Tyr-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-2Nal-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Ile-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Arg-Arg- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Lys- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Orn- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Dab- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-His- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Tyr- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Arg- D Pro-Tiq-); cyclo(-Trp- D Phe-Trp-Arg- D Pro-Oic-); cyclo (-Trp- D Phe-Trp-Arg- D Pro- -Hyp (Bn) -); cyclo(-1Nal- D Arg-Trp-Arg- D Pro-Tic-); cyclo(-1Nal- D His-Ile-Arg- D Pro-Tic-); cyclo(-Abu- D Arg-Arg-Trp- D Pro-Tic-); cyclo(-His- D Trp-His-Arg- D Pro-Tic-); cyclo(-Ile- D His-Trp-Arg- D Pro-Tic-); cyclo(-Ile- D Arg-Ile-Arg- D Pro-Tic-); cyclo(-Ile- D Trp-His-Arg- D Pro-Tic-); cyclo(-Arg- D Trp-His-Arg- D Pro-Tic-); cyclo(-Arg- D His-Trp-Arg- D Pro-Tic-); cyclo(-Trp- D Arg-His-Arg-D P ro-Tic-); cyclo(-Trp- D Arg-His-Trp- D Pro-Tic-); cyclo(-His- D 1Nal-His-Trp- D Pro-Tic-); cyclo(-Trp- D Phe-Trp-Arg- D Tic-Pro-); cyclo(-Trp- D Phe-Trp-Arg- D Pip-Pro-); cyclo(-1Nal- D His-Ile-Arg- D Pro-Azt-); cyclo(-1Nal- D Arg-Ile-Arg- D Pro-Azt-); cyclo(-1Nal- D Arg-Trp-Arg- D Pro-Azt-); cyclo(-1Nal- D His-Tyr-Arg- D Pro-Azt-); cyclo(-Trp- D Arg-Trp-Ile- D Pro-Azt-); cyclo(-Trp- D His-Ile-Arg- D Pro-Azt-); cyclo (-Trp- D His-Trp-Arg- D Pro-Azt-); cyclo(-Trp- D Thr-Tyr-Arg- D Pro-Azt-); cyclo(-Trp- D Arg-Ile-Arg- D Pro-Azt-); cyclo(-Trp- D Arg-Trp-Arg- D Pro-Azt-); and pharmaceutically acceptable salts thereof.
An airfoil for a turbine engine comprising an airfoil having pressure and suction sides (72,74) and extending in a radial direction from a 0% span position at an inner flow path location to a 100% span position at an airfoil tip, wherein the airfoil has a curve (102,122) corresponding to a relationship between a leading edge dihedral and a span position, characterised in that: the leading edge dihedral has a portion of the curve (102,122) with a change in dihedral in the range of 90% to 100% span position of greater than 10°, wherein a positive dihedral corresponds to suction side-leaning, and a negative dihedral corresponds to pressure side-leaning; and the portion has a negative dihedral angle and ends with a positive dihedral angle at the 100% span position.
A package, comprising: - a package body with a package top side, a package footprint side and package sidewalls, the package sidewalls extending from the package footprint side to the package top side; - a plurality of power semiconductor chips electrically connected in parallel to each other, each power semiconductor chip having a first load terminal and a second load terminal and being configured to block a blocking voltage applied between said load terminals (101, 102) and to conduct a chip load current between said load terminals (101, 102); - a lead frame structure for electrically and mechanically coupling the package to a carrier with the package footprint side facing to the carrier, the lead frame structure comprising a plurality of first outside terminals, wherein ∘ each first outside terminal extends out of the package body for interfacing with the carrier; ∘ each first load terminal of the plurality of power semiconductor chips is electrically connected, at least by means of one package body internal connection member, to at least two of the plurality of first outside terminals; - a horizontally extending conduction layer at the package top side or at the package footprint side, wherein the conduction layer is electrically connected with each of the second load terminals of the plurality of power semiconductor chips. - a package body with a package top side, a package footprint side and package sidewalls, the package sidewalls extending from the package footprint side to the package top side; - a plurality of power semiconductor chips electrically connected in parallel to each other, each power semiconductor chip having a first load terminal and a second load terminal and being configured to block a blocking voltage applied between said load terminals (101, 102) and to conduct a chip load current between said load terminals (101, 102); - a lead frame structure for electrically and mechanically coupling the package to a carrier with the package footprint side facing to the carrier, the lead frame structure comprising a plurality of first outside terminals, wherein ∘ each first outside terminal extends out of the package body for interfacing with the carrier; ∘ each first load terminal of the plurality of power semiconductor chips is electrically connected, at least by means of one package body internal connection member, to at least two of the plurality of first outside terminals; ∘ each first outside terminal extends out of the package body for interfacing with the carrier; ∘ each first load terminal of the plurality of power semiconductor chips is electrically connected, at least by means of one package body internal connection member, to at least two of the plurality of first outside terminals; - a horizontally extending conduction layer at the package top side or at the package footprint side, wherein the conduction layer is electrically connected with each of the second load terminals of the plurality of power semiconductor chips.
Mast for telescopic drilling comprising: - at least one first structure comprising a fixing portion, for being fixed to a drill floor; - at least one second structure mobile relative to the first structure so as to obtain a telescopic mast; - a moving system, capable of extending and retracting a longitudinal extension of said telescopic mast, in particular by moving said at least one second structure; said moving system comprises: - at least one first actuator device, which, at its first end, is adapted to be fixed to said first structure or to said drill floor; - at least one second actuator device, to which, at its first end, is fixed said second structure; - at least one supply chamber, for supplying at least said first actuator device and at least said second actuator; said mast is characterized in that said at least one first actuator device and said at least one second actuator device are: - aligned along a single direction, and - operate along directions that are opposite to one another. - at least one first structure comprising a fixing portion, for being fixed to a drill floor; - at least one second structure mobile relative to the first structure so as to obtain a telescopic mast; - a moving system, capable of extending and retracting a longitudinal extension of said telescopic mast, in particular by moving said at least one second structure; - at least one first actuator device, which, at its first end, is adapted to be fixed to said first structure or to said drill floor; - at least one second actuator device, to which, at its first end, is fixed said second structure; - at least one supply chamber, for supplying at least said first actuator device and at least said second actuator; - aligned along a single direction, and - operate along directions that are opposite to one another.
An antiperspirant or deodorant roll-on composition in the form of an oil-in-water emulsion comprising:- a continuous aqueous phase in which is dissolved or dispersed an antiperspirant or deodorant active; a dispersed oil phase; a nonionic emulsifier or mixture of emulsifiers a dispersed particulate shear sensitive encapsulated perfume, and optionally a thickener for the continuous phase in which composition the particulate encapsulated perfume comprises capsules having a shell of a cross-linked gelatin coacervate, a volume average particle diameter in the range of 25 to 70 μm, a shell having a measured thickness in the range of from 0.25 to 9 μm and providing from 10 to 40% by weight of the capsules, a ratio of the shell thickness to the average particle diameter in the range of from 1:5 to 1:120 and a Hysitron hardness, measured in a Hysitron Tribo-indenter fitted with a Berkovich tip and programmed to perform an indent by compressing a sample with an initial contact force of 75 μN, for 10 seconds, followed by a position hold stage for 1 second and a decompression stage for 10 seconds, in the range of from 1.5 MPa to 50 MPa. a continuous aqueous phase in which is dissolved or dispersed an antiperspirant or deodorant active; a dispersed oil phase; a nonionic emulsifier or mixture of emulsifiers a dispersed particulate shear sensitive encapsulated perfume, and optionally a thickener for the continuous phase in which composition the particulate encapsulated perfume comprises capsules having a shell of a cross-linked gelatin coacervate, a volume average particle diameter in the range of 25 to 70 μm, a shell having a measured thickness in the range of from 0.25 to 9 μm and providing from 10 to 40% by weight of the capsules, a ratio of the shell thickness to the average particle diameter in the range of from 1:5 to 1:120 and a Hysitron hardness, measured in a Hysitron Tribo-indenter fitted with a Berkovich tip and programmed to perform an indent by compressing a sample with an initial contact force of 75 μN, for 10 seconds, followed by a position hold stage for 1 second and a decompression stage for 10 seconds, in the range of from 1.5 MPa to 50 MPa.
Method to check the functional capability of a radar-based fill level measuring device that is used to measure the fill level of a filling material located in a container, comprising the following process steps: - Clocked emission of microwave pulses (s HF) in the direction of the filling material at a defined clock rate (f c), - Reception of reflected microwave pulses (E HF) following reflection on the surface of the filling material, - Generation of an evaluation signal by sampling the microwave pulses received (e HF) at a defined sampling rate (f' c), - Measurement of a ratio (Φ) between the clock rate (f c) and the sampling rate (f' c), - Check of the ratio (Φ) against a target ratio (Φ ref) by regulating the sampling rate (f' c) relative to the target ratio (Φ ref) using a first control variable (V R) in such a way that the ratio (Φ) corresponds to the target ratio (Φ ref), and - Measurement of an amplitude and/or an amplitude offset (ΔA) of the evaluation signal, wherein the amplitude is regulated using a second control variable (v x) or wherein the amplitude offset is regulated using a third control variable (V ΔA), wherein the fill level measuring device is deemed functional, insofar as none of the control variables (v R, v X, v ΔA) exceeds or falls below a corresponding, defined limit value (±v R,max, ±v x,max, ± v ΔA,max). - Clocked emission of microwave pulses (s HF) in the direction of the filling material at a defined clock rate (f c), - Reception of reflected microwave pulses (E HF) following reflection on the surface of the filling material, - Generation of an evaluation signal by sampling the microwave pulses received (e HF) at a defined sampling rate (f' c), - Measurement of a ratio (Φ) between the clock rate (f c) and the sampling rate (f' c), - Check of the ratio (Φ) against a target ratio (Φ ref) by regulating the sampling rate (f' c) relative to the target ratio (Φ ref) using a first control variable (V R) in such a way that the ratio (Φ) corresponds to the target ratio (Φ ref), and - Measurement of an amplitude and/or an amplitude offset (ΔA) of the evaluation signal, wherein the amplitude is regulated using a second control variable (v x) or wherein the amplitude offset is regulated using a third control variable (V ΔA),