mhurhangee/ep-ind-claims huggingface dataset:
An artificial nucleic acid molecule comprising: a. at least one 5'-untranslated region element (5'UTR element) which comprises or consists of a nucleic acid sequence which has an identity of at least 95% to a nucleic acid sequence according to SEQ ID NOs. 1368, 1452, 1453, 1454, 1455, 1456, 1457 or 1458, or a corresponding RNA sequence, or a functional fragment of a nucleic acid sequence, which has an identity of at least 95% to a nucleic acid sequence according to SEQ ID NOs. 1368,1452, 1453, 1454, 1455, 1456, 1457 or 1458, or a corresponding RNA sequence; and b. at least one open reading frame, and wherein the 5'UTR element is suitable for increasing protein production from the artificial nucleic acid molecule. a. at least one 5'-untranslated region element (5'UTR element) which comprises or consists of a nucleic acid sequence which has an identity of at least 95% to a nucleic acid sequence according to SEQ ID NOs. 1368, 1452, 1453, 1454, 1455, 1456, 1457 or 1458, or a corresponding RNA sequence, or a functional fragment of a nucleic acid sequence, which has an identity of at least 95% to a nucleic acid sequence according to SEQ ID NOs. 1368,1452, 1453, 1454, 1455, 1456, 1457 or 1458, or a corresponding RNA sequence; and b. at least one open reading frame, and wherein the 5'UTR element is suitable for increasing protein production from the artificial nucleic acid molecule.
A method of manufacturing a semiconductor switching device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising: forming an undoped InGaAs layer on an insulative semiconductor substrate; bonding a pair of electrical contact layers on opposite sides of the InGaAs layer to form electrodes (2a, 2b, 2c, 2d, 3a, 3b, 3c) of the switching device; and forming bulk point defects by irradiating the InGaAs layer with Nitrogen ions; characterized in that the irradiation is at an energy such that the Nitrogen ions penetrate the InGaAs layer and substantially all of the nitrogen ions come to rest outside the InGaAs layer in the underlying substrate. forming an undoped InGaAs layer on an insulative semiconductor substrate; bonding a pair of electrical contact layers on opposite sides of the InGaAs layer to form electrodes (2a, 2b, 2c, 2d, 3a, 3b, 3c) of the switching device; and forming bulk point defects by irradiating the InGaAs layer with Nitrogen ions; characterized in that the irradiation is at an energy such that the Nitrogen ions penetrate the InGaAs layer and substantially all of the nitrogen ions come to rest outside the InGaAs layer in the underlying substrate.
A semiconductor die having a top surface and an opposed bottom surface, the semiconductor die (102, 1102, 1202) comprising: a base semiconductor substrate comprising semiconductor material and having a first surface below the top surface of the semiconductor die (102, 1102, 1202), and an opposed second surface; and an electrically conductive through substrate via, TSV, (140, 340, 1240) extending between the first and second surfaces (104, 105) of the base semiconductor substrate, wherein the TSV (140, 340, 1240) has a first end proximate to the first surface of the base semiconductor substrate, a second end proximate to the second surface of the base semiconductor substrate, and a TSV sidewall extending between the first and second ends (142, 143) of the TSV (140, 340, 1240); wherein the second surface of the base semiconductor substrate includes a recessed region (610, 810, 1210) proximate to the TSV (140, 340, 1240) so that the second end of the TSV (140, 340, 1240) protrudes from the second surface of the base semiconductor substrate and so that the TSV sidewall has an exposed portion at the second end of the TSV (140, 340, 1240); and at least one electrically conductive layer (150, 1250) connected to the second surface of the base semiconductor substrate and to the exposed portion of the TSV sidewall, characterized in that the at least one electrically conductive layer (150, 1250) comprises a layer of gold (1021, 1031) eutectically bonded with the semiconductor material at the second surface of the base semiconductor substrate. a base semiconductor substrate comprising semiconductor material and having a first surface below the top surface of the semiconductor die (102, 1102, 1202), and an opposed second surface; and an electrically conductive through substrate via, TSV, (140, 340, 1240) extending between the first and second surfaces (104, 105) of the base semiconductor substrate, wherein the TSV (140, 340, 1240) has a first end proximate to the first surface of the base semiconductor substrate, a second end proximate to the second surface of the base semiconductor substrate, and a TSV sidewall extending between the first and second ends (142, 143) of the TSV (140, 340, 1240); wherein the second surface of the base semiconductor substrate includes a recessed region (610, 810, 1210) proximate to the TSV (140, 340, 1240) so that the second end of the TSV (140, 340, 1240) protrudes from the second surface of the base semiconductor substrate and so that the TSV sidewall has an exposed portion at the second end of the TSV (140, 340, 1240); and at least one electrically conductive layer (150, 1250) connected to the second surface of the base semiconductor substrate and to the exposed portion of the TSV sidewall, characterized in that the at least one electrically conductive layer (150, 1250) comprises a layer of gold (1021, 1031) eutectically bonded with the semiconductor material at the second surface of the base semiconductor substrate.
Lumbar support for a backrest of a vehicle seat comprising: a. a wire structure, having a pair of wire guide members (12, 14), for mounting the lumbar support within the vehicle seat; b. a main plate, supported by the wire guide members (10, 12), wherein the main plate is linearly movable with respect to the wire guide members (10, 14); c. a position drive mechanism, for linearly moving the main plate with respect to the wire structure, wherein the main drive mechanism comprises a position electric motor which is mounted to the main plate; d. a curvature drive mechanism, comprising an adjusting member; e. at least one arching element (40, 42) suspended between the main plate and the adjusting member; and f. a curvature electric motor mounted to the main plate, for moving the adjusting member to adjust the curvature of the at least one arching element (40, 42); characterized in that g. the adjusting member is supported by the main plate and movable with respect to the main plate. a. a wire structure, having a pair of wire guide members (12, 14), for mounting the lumbar support within the vehicle seat; b. a main plate, supported by the wire guide members (10, 12), wherein the main plate is linearly movable with respect to the wire guide members (10, 14); c. a position drive mechanism, for linearly moving the main plate with respect to the wire structure, wherein the main drive mechanism comprises a position electric motor which is mounted to the main plate; d. a curvature drive mechanism, comprising an adjusting member; e. at least one arching element (40, 42) suspended between the main plate and the adjusting member; and f. a curvature electric motor mounted to the main plate, for moving the adjusting member to adjust the curvature of the at least one arching element (40, 42); characterized in that g. the adjusting member is supported by the main plate and movable with respect to the main plate.
A cartridge (100, 200, 1600) for a vaporization device, the cartridge comprising: a mouthpiece; a reservoir (106, 206, 1606) configured to hold a vaporizable material (104, 1604); a wick (103, 203, 403, 503, 603, 703, 803, 903) configured to draw at least a portion of the vaporizable material (104, 1604) from the reservoir (106, 206, 1606) to a vaporization region of the wick, the wick (103, 203, 403, 503, 603, 703, 803, 903) comprising a thermally conductive core (408, 508, 608, 708, 808, 908, 1608) and a porous wicking material (407, 507, 607, 707, 807, 907, 1607) surrounding at least a portion of the thermally conductive core, the thermally conductive core being more thermally conductive than the porous wicking material; and a heating element (102, 202, 1602) disposed near the vaporization region of the wick (103, 203, 403, 503, 603, 703, 803, 903) and configured to heat the at least a portion of the vaporizable material (104, 1604) drawn from the reservoir (106, 206, 1606). a wick (103, 203, 403, 503, 603, 703, 803, 903) configured to draw at least a portion of the vaporizable material (104, 1604) from the reservoir (106, 206, 1606) to a vaporization region of the wick, the wick (103, 203, 403, 503, 603, 703, 803, 903) comprising a thermally conductive core (408, 508, 608, 708, 808, 908, 1608) and a porous wicking material (407, 507, 607, 707, 807, 907, 1607) surrounding at least a portion of the thermally conductive core, the thermally conductive core being more thermally conductive than the porous wicking material; and a heating element (102, 202, 1602) disposed near the vaporization region of the wick (103, 203, 403, 503, 603, 703, 803, 903) and configured to heat the at least a portion of the vaporizable material (104, 1604) drawn from the reservoir (106, 206, 1606).
Combined control method of an Organic Rankine Cycle power plant, wherein - said plant comprises at least a feed pump, a heat exchanger, an expansion turbine and a condenser, being the heat exchanger and the expansion turbine in fluid dynamic connection by means of at least one admission line which is provide with an admission valve and being the heat exchanger and the condenser in fluid connection by means of at least one by-pass line which is provided with a by-pass valve, said Organic Rankine Cycle power plant furthermore comprising a control unit and a means for receiving a set point value of a required power, - operating said Organic Rankine Cycle power plant includes a step of feeding an organic working fluid, a step of heating and/or vaporizing the same working fluid, an expansion phase and a step of condensing the same working fluid, - said combined control method comprising that said control unit regulates the power supplied from the Organic Rankine Cycle power plant by determining an opening degree (%AV) of the admission valve as a function of the received set point value of the required power and determining an opening degree of the by-pass valve (%BV) as a function of the opening degree (%AV) of the admission valve, so that the total flow rate of the organic working fluid remains substantially constant during changing of the power supply output. - said plant comprises at least a feed pump, a heat exchanger, an expansion turbine and a condenser, being the heat exchanger and the expansion turbine in fluid dynamic connection by means of at least one admission line which is provide with an admission valve and being the heat exchanger and the condenser in fluid connection by means of at least one by-pass line which is provided with a by-pass valve, said Organic Rankine Cycle power plant furthermore comprising a control unit and a means for receiving a set point value of a required power, - operating said Organic Rankine Cycle power plant includes a step of feeding an organic working fluid, a step of heating and/or vaporizing the same working fluid, an expansion phase and a step of condensing the same working fluid, - said combined control method comprising that said control unit regulates the power supplied from the Organic Rankine Cycle power plant by determining an opening degree (%AV) of the admission valve as a function of the received set point value of the required power and determining an opening degree of the by-pass valve (%BV) as a function of the opening degree (%AV) of the admission valve, so that the total flow rate of the organic working fluid remains substantially constant during changing of the power supply output.
A barrier coating composition comprising - 30 - 70 weight-% of styrene (meth)acrylate copolymer, which is polymerised in the presence of a stabiliser, and which has a weight average molecular weight < 100 000 g/mol and a glass transition temperature Tg ≤ 20 °C, preferably ≤ 10 °C, - 30 - 70 weight-% of polyvinyl alcohol, which has a molecular weight of ≤ 50 000 g/mol, wherein the ratio of styrene (meth)acrylate copolymer to polyvinyl alcohol is from 1:2 to 2:1, and - at the most 5.0 weight-% of a cross-linker, which reacts with -OH or -COOH groups. - 30 - 70 weight-% of styrene (meth)acrylate copolymer, which is polymerised in the presence of a stabiliser, and which has a weight average molecular weight < 100 000 g/mol and a glass transition temperature Tg ≤ 20 °C, preferably ≤ 10 °C, - 30 - 70 weight-% of polyvinyl alcohol, which has a molecular weight of ≤ 50 000 g/mol, wherein the ratio of styrene (meth)acrylate copolymer to polyvinyl alcohol is from 1:2 to 2:1, and - at the most 5.0 weight-% of a cross-linker, which reacts with -OH or -COOH groups.
A producing method of a tobacco raw material containing a flavor constituent, comprising: a step A for heating a tobacco raw material in a closed space which is treated with alkali and for taking a flavor constituent released in the gas phase from the tobacco raw material to an outside of the closed space; a step B for allowing a first solvent to capture the flavor constituent by bringing the flavor constituent released in the gas phase in the step A into contact with the first solvent which is a liquid substance at a temperature which is 10°C or more and 40°C or less on the outside of the closed space; a step C for supplying a second solvent to the tobacco raw material in the closed space after the step A and for taking a normal component which is released as the liquid phase from the tobacco raw material to the second solvent, together with the second solvent to the outside of the closed space; and after the steps B and C, the step D for adding the first solvent capturing the flavor constituent in the step B to the tobacco raw material from which the flavor constituent is released to the outside of the closed space in the step A. a step A for heating a tobacco raw material in a closed space which is treated with alkali and for taking a flavor constituent released in the gas phase from the tobacco raw material to an outside of the closed space; a step B for allowing a first solvent to capture the flavor constituent by bringing the flavor constituent released in the gas phase in the step A into contact with the first solvent which is a liquid substance at a temperature which is 10°C or more and 40°C or less on the outside of the closed space; a step C for supplying a second solvent to the tobacco raw material in the closed space after the step A and for taking a normal component which is released as the liquid phase from the tobacco raw material to the second solvent, together with the second solvent to the outside of the closed space; and after the steps B and C, the step D for adding the first solvent capturing the flavor constituent in the step B to the tobacco raw material from which the flavor constituent is released to the outside of the closed space in the step A.
A method in a control unit for configuration in a wireless communication system, comprising: mapping a service category to a virtual network instance based on service requirements of the service category wherein the virtual network instance is a network slice instance, NSI, the virtual network instance having a first virtual network instance configuration for a current time interval, the first virtual network instance configuration defining a first allocation of resources in a plurality of network layers; predicting a network state in a next time interval wherein predicting the network state comprises predicting a channel condition in the next time interval; determining if the predicted network state in the next time interval results in a predicted performance degradation in the next time interval in relation to at least one network layer of the plurality of network layers; on condition that there is a predicted performance degradation in the next time interval in relation to at least one network layer of the plurality of network layers, determining a second virtual network instance configuration for the next time interval, the second virtual network instance configuration defining an adapted second allocation of resources in the plurality of network layers at least partly compensating for the predicted performance degradation in the next time interval in relation to the at least one network layer of the plurality of network layers; and configuring the virtual network instance based on the first virtual network instance configuration or the second virtual network instance configuration for the next time interval. mapping a service category to a virtual network instance based on service requirements of the service category wherein the virtual network instance is a network slice instance, NSI, the virtual network instance having a first virtual network instance configuration for a current time interval, the first virtual network instance configuration defining a first allocation of resources in a plurality of network layers; predicting a network state in a next time interval wherein predicting the network state comprises predicting a channel condition in the next time interval; determining if the predicted network state in the next time interval results in a predicted performance degradation in the next time interval in relation to at least one network layer of the plurality of network layers; on condition that there is a predicted performance degradation in the next time interval in relation to at least one network layer of the plurality of network layers, determining a second virtual network instance configuration for the next time interval, the second virtual network instance configuration defining an adapted second allocation of resources in the plurality of network layers at least partly compensating for the predicted performance degradation in the next time interval in relation to the at least one network layer of the plurality of network layers; and configuring the virtual network instance based on the first virtual network instance configuration or the second virtual network instance configuration for the next time interval.
A method for reporting signal quality, comprising: measuring signal quality of a measurement signal within a radio link monitoring, RLM, assessment period and before a moment when the measurement signal changes and/or measuring signal quality of a changed measurement signal within the RLM assessment period; comparing the measured signal quality with a preset threshold value; and generating an in-sync, IS, indication or an out-of-sync, OSS, indication according to the comparison result and reporting the IS indication or the OOS indication. measuring signal quality of a measurement signal within a radio link monitoring, RLM, assessment period and before a moment when the measurement signal changes and/or measuring signal quality of a changed measurement signal within the RLM assessment period; comparing the measured signal quality with a preset threshold value; and generating an in-sync, IS, indication or an out-of-sync, OSS, indication according to the comparison result and reporting the IS indication or the OOS indication.
A method for manufacturing a part including a formation of successive metallic layers (20 i...20 n), superimposed on one another, each layer being formed by the deposition of a filler metal (15, 25), the filler metal being subjected to an energy input so as to melt and constitute, when solidifying, said layer, the method being characterized in that the filler metal (15, 25) is an aluminum alloy including the following alloy elements (weight%): - Zr: 0.5 % to 2.5 %, preferably according to a first variant 0.8 to 2.5 %, more preferably 1 to 2.5 %, still more preferably 1.3 to 2.5 %; or preferably according to a second variant 0.5 to 2 %, more preferably 0.6 to 1.8 %, more preferably 0.6 to 1.6 %, more preferably 0.7 to 1.5 %, more preferably 0.8 to 1.5 %, more preferably 0.9 to 1.5 %, still more preferably 1 to 1.4 %; - Fe: 0 % to 3 %, preferably 0.5 % to 2.5 °/; preferably according to a first variant 0.8 to 2.5 %, preferably 0.8 to 2 %, more preferably 0.8 to 1.2; or preferably according to a second variant 1.5 to 2.5 %, preferably 1.6 to 2.4 %, more preferably 1.7 to 2.3 °/; - optionally Si: ≤ 0,3 %, preferably ≤ 0.2 %, more preferably ≤ 0.1 %; - optionally Cu: ≤ 0.5 %, preferably 0.05 to 0.5 %, preferably 0.1 to 0.4 %; - optionally Mg: ≤ 0.2 %, preferably ≤ 0.1 %, preferably < 0.05 %; - Other alloy elements < 0.1 % individually, and < 0.5 % all in all; - impurities: < 0.05 % individually, and < 0.15 % all in all; the remainder consisting of aluminum. - Zr: 0.5 % to 2.5 %, preferably according to a first variant 0.8 to 2.5 %, more preferably 1 to 2.5 %, still more preferably 1.3 to 2.5 %; or preferably according to a second variant 0.5 to 2 %, more preferably 0.6 to 1.8 %, more preferably 0.6 to 1.6 %, more preferably 0.7 to 1.5 %, more preferably 0.8 to 1.5 %, more preferably 0.9 to 1.5 %, still more preferably 1 to 1.4 %; - Fe: 0 % to 3 %, preferably 0.5 % to 2.5 °/; preferably according to a first variant 0.8 to 2.5 %, preferably 0.8 to 2 %, more preferably 0.8 to 1.2; or preferably according to a second variant 1.5 to 2.5 %, preferably 1.6 to 2.4 %, more preferably 1.7 to 2.3 °/; - optionally Si: ≤ 0,3 %, preferably ≤ 0.2 %, more preferably ≤ 0.1 %; - optionally Cu: ≤ 0.5 %, preferably 0.05 to 0.5 %, preferably 0.1 to 0.4 %; - optionally Mg: ≤ 0.2 %, preferably ≤ 0.1 %, preferably < 0.05 %; - Other alloy elements < 0.1 % individually, and < 0.5 % all in all; - impurities: < 0.05 % individually, and < 0.15 % all in all;
A binder composition comprising: (i) a phospho-magnesium cement; (ii) a boron source; (iii) a lithium salt; and (iv) water. (i) a phospho-magnesium cement; (ii) a boron source; (iii) a lithium salt; and (iv) water.
A high pressure ethylene polymerization process in which ethylene is polymerized with a polyunsaturated olefin comprising at least 6 carbon atoms and at least two non-conjugated double bonds of which at least one is terminal, characterized in that an inhibitor is added to the reaction mixture or any of its components before the reaction mixture is fed to the reaction zone, wherein the inhibitor is present in the reaction mixture fed to the reaction zone in an amount of 1 wt.% or less based on the total weight of the polyunsaturated olefin and the inhibitor in the reaction mixture, the inhibitor is selected from phenolic-group containing compounds, amino group-containing compounds or mixtures thereof, wherein the phenolic-group containing compound comprises the structural element: wherein R 1 to R 5 independently are H, hydrocarbyl, optionally containing heteroatoms, or OH with the proviso that at least two of R 1 to R 5 independently are hydrocarbyl or OH and wherein the amine group-containing compounds comprises the structural element: wherein R 12 to R 16 independently are H or hydrocarbyl, optionally containing heteroatoms, whereby two or more of R 12 to R 16 maybe connected with each other R11 is a hydrocarbyl group, optionally containing heteroatoms. R 12 to R 16 independently are H or hydrocarbyl, optionally containing heteroatoms, whereby two or more of R 12 to R 16 maybe connected with each other R11 is a hydrocarbyl group, optionally containing heteroatoms.