A combined power amplifier and low noise amplifier device, implemented as an integrated circuit, the device comprising: a first merged power amplifier and low noise amplifier for transmitting and receiving first-standard signals via a first single pin of said integrated circuit; and a second merged power amplifier and low noise amplifier for transmitting and receiving second-standard signals via a second single pin of said integrated circuit, wherein each of the first merged power amplifier and low noise amplifier and the second merged power amplifier and low noise amplifier comprises: a plurality of transistors (302, 304, 306, 308) configured to operate in a first mode as a power amplifier for a signal to be transmitted by said device, and further configured to operate in a second mode as a low noise amplifier for a signal which has been received by said device, said plurality of transistors including a first subset of transistors (302, 308) connected to one another and a second subset of transistors (304, 306) connected to one another; wherein in said first mode said first subset of transistors (302, 308) and said second subset of transistors (304, 306) are configured to be turned on to operate together as said power amplifier, and wherein in said second mode said first subset of transistors (302, 308) are configured to be turned on to operate as said low noise amplifier and said second subset of transistors (304, 306) are configured to be turned off. a first merged power amplifier and low noise amplifier for transmitting and receiving first-standard signals via a first single pin of said integrated circuit; and a second merged power amplifier and low noise amplifier for transmitting and receiving second-standard signals via a second single pin of said integrated circuit, wherein each of the first merged power amplifier and low noise amplifier and the second merged power amplifier and low noise amplifier comprises: a plurality of transistors (302, 304, 306, 308) configured to operate in a first mode as a power amplifier for a signal to be transmitted by said device, and further configured to operate in a second mode as a low noise amplifier for a signal which has been received by said device, said plurality of transistors including a first subset of transistors (302, 308) connected to one another and a second subset of transistors (304, 306) connected to one another; wherein in said first mode said first subset of transistors (302, 308) and said second subset of transistors (304, 306) are configured to be turned on to operate together as said power amplifier, and wherein in said second mode said first subset of transistors (302, 308) are configured to be turned on to operate as said low noise amplifier and said second subset of transistors (304, 306) are configured to be turned off. a plurality of transistors (302, 304, 306, 308) configured to operate in a first mode as a power amplifier for a signal to be transmitted by said device, and further configured to operate in a second mode as a low noise amplifier for a signal which has been received by said device, said plurality of transistors including a first subset of transistors (302, 308) connected to one another and a second subset of transistors (304, 306) connected to one another; wherein in said first mode said first subset of transistors (302, 308) and said second subset of transistors (304, 306) are configured to be turned on to operate together as said power amplifier, and wherein in said second mode said first subset of transistors (302, 308) are configured to be turned on to operate as said low noise amplifier and said second subset of transistors (304, 306) are configured to be turned off.