A method comprising: applying a first voltage to first terminals of a plurality of conducting elements, each of the plurality of conducting elements being configured to couple a corresponding correlated electron switch, CES, element of a plurality of CES elements, between a common source voltage and one of a plurality of bitlines during a first phase of a write operation to place one or more first ones of the plurality of CES elements into a low impedance or conductive state; and applying a second voltage to the first terminals of the plurality of conducting elements during a second phase of the write operation to place one or more second ones of the plurality of CES elements into a high impedance or insulative state, wherein the plurality of conducting elements are in an at least partially conductive state during the first and second phases to couple each of the CES elements between the common source voltage and a corresponding one of the plurality of bitlines; the method further comprising: maintaining a voltage difference between the common source voltage and the first voltage and between the common source voltage and the second voltage so as to limit current and voltage applied to the first terminals of the plurality of conducting elements during the first and second phases sufficiently to maintain the plurality of conducting elements in the at least partially conductive state during the first and second phases and to limit current in the one or more second ones of the plurality of CES elements; and changing a voltage on one or more bitlines of the plurality of bitlines coupled to the second ones of the plurality of CES elements following a change in the voltage difference between the common source voltage and the second voltage wherein the current in the one or more second ones of the plurality of CES elements corresponds to a compliance current to set a condition of a current density for a subsequent reset operation to place the one or more second ones of the plurality of CES elements into a high-impedance state. applying a first voltage to first terminals of a plurality of conducting elements, each of the plurality of conducting elements being configured to couple a corresponding correlated electron switch, CES, element of a plurality of CES elements, between a common source voltage and one of a plurality of bitlines during a first phase of a write operation to place one or more first ones of the plurality of CES elements into a low impedance or conductive state; and applying a second voltage to the first terminals of the plurality of conducting elements during a second phase of the write operation to place one or more second ones of the plurality of CES elements into a high impedance or insulative state, wherein the plurality of conducting elements are in an at least partially conductive state during the first and second phases to couple each of the CES elements between the common source voltage and a corresponding one of the plurality of bitlines; the method further comprising: maintaining a voltage difference between the common source voltage and the first voltage and between the common source voltage and the second voltage so as to limit current and voltage applied to the first terminals of the plurality of conducting elements during the first and second phases sufficiently to maintain the plurality of conducting elements in the at least partially conductive state during the first and second phases and to limit current in the one or more second ones of the plurality of CES elements; and changing a voltage on one or more bitlines of the plurality of bitlines coupled to the second ones of the plurality of CES elements following a change in the voltage difference between the common source voltage and the second voltage wherein the current in the one or more second ones of the plurality of CES elements corresponds to a compliance current to set a condition of a current density for a subsequent reset operation to place the one or more second ones of the plurality of CES elements into a high-impedance state. maintaining a voltage difference between the common source voltage and the first voltage and between the common source voltage and the second voltage so as to limit current and voltage applied to the first terminals of the plurality of conducting elements during the first and second phases sufficiently to maintain the plurality of conducting elements in the at least partially conductive state during the first and second phases and to limit current in the one or more second ones of the plurality of CES elements; and changing a voltage on one or more bitlines of the plurality of bitlines coupled to the second ones of the plurality of CES elements following a change in the voltage difference between the common source voltage and the second voltage wherein the current in the one or more second ones of the plurality of CES elements corresponds to a compliance current to set a condition of a current density for a subsequent reset operation to place the one or more second ones of the plurality of CES elements into a high-impedance state.