A solid-state image pickup element comprising: a light receiving/charge accumulating region (120, 220, 320) formed in a semiconductor layer which comprises M (where M ≥ 2) laminated light receiving/charge accumulating layers (121, 122, 123, 221, 222, 223, 321, 322, 323) of a second conductivity type laminated in a direction of a normal to the semiconductor layer and interposed between an upper layer (30, 31, 32) and a lower layer (31, 32, 33) of a first conductivity type; a charge outputting region (140, 240, 340) of the second conductivity type formed in the semiconductor layer; a depletion layer forming region (150, 250, 350) of the first conductivity type formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region (120, 220, 320) and the charge outputting region (140, 240, 340); a control electrode region (160, 260, 360) for controlling a state of formation of a depletion layer in the depletion layer forming region (150, 250, 350), such that the depletion layer formed in the depletion layer forming region (150, 250, 350) is configured to transfer charge accumulated in one of the light receiving/charge accumulating layers (121, 122, 123, 221, 222, 223, 321, 322, 323) to the charge outputting region (140, 240, 340), the control electrode region (160, 260, 360) being arranged over or under the semiconductor layer, wherein light receiving/charge accumulating layer extending sections (121A, 122A, 123A, 221A, 222A, 223A, 321A, 322A, 323A) have the second conductivity type and extend from the respective light receiving/charge accumulating layer (121, 122, 123, 221, 222, 223, 321, 322, 323) to the depletion layer forming region (150, 250, 350), and characterized in that projected images of respective light receiving/charge accumulating layer extending sections (121A, 122A, 123A, 221A, 222A, 223A, 321A, 322A, 323A) in a direction of a normal to the semiconductor layer in the depletion layer forming region (150, 250, 350) do not overlap each other. a light receiving/charge accumulating region (120, 220, 320) formed in a semiconductor layer which comprises M (where M ≥ 2) laminated light receiving/charge accumulating layers (121, 122, 123, 221, 222, 223, 321, 322, 323) of a second conductivity type laminated in a direction of a normal to the semiconductor layer and interposed between an upper layer (30, 31, 32) and a lower layer (31, 32, 33) of a first conductivity type; a charge outputting region (140, 240, 340) of the second conductivity type formed in the semiconductor layer; a depletion layer forming region (150, 250, 350) of the first conductivity type formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region (120, 220, 320) and the charge outputting region (140, 240, 340); a control electrode region (160, 260, 360) for controlling a state of formation of a depletion layer in the depletion layer forming region (150, 250, 350), such that the depletion layer formed in the depletion layer forming region (150, 250, 350) is configured to transfer charge accumulated in one of the light receiving/charge accumulating layers (121, 122, 123, 221, 222, 223, 321, 322, 323) to the charge outputting region (140, 240, 340), the control electrode region (160, 260, 360) being arranged over or under the semiconductor layer, wherein