A display substrate, comprising: a substrate; a first transistor and a second transistor on the substrate, directions of intrinsic threshold voltage shifts of the first transistor and the second transistor being opposite; and a shift adjustment structure on the substrate; wherein the shift adjustment structure is configured to input adjustment signals to the first transistor and the second transistor respectively to make threshold voltages of the first transistor and the second transistor shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively; characterized in that wherein the shift adjustment structure comprises an adjustment signal source, a switch unit and a signal lead, the adjustment signal source is connected to the switch unit, and the switch unit is connected to the signal lead; the adjustment signal source is configured to generate a first adjustment signal and a second adjustment signal that adjust the intrinsic threshold voltage shifts of the first transistor and the second transistor respectively; the first adjustment signal and the second adjustment signal have opposite polarities; the switch unit is configured to turn on or off the adjustment signal source; and the signal lead comprises a first lead and a second lead, the first lead is configured to input the first adjustment signal to the first transistor, and the second lead is configured to input the second adjustment signal to the second transistor; wherein the first transistor and the second transistor are top gate transistors, the first lead forms a bottom gate of the first transistor, and the second lead forms a bottom gate of the second transistor, thereby making the first transistor and the second transistor respectively form a double gate structure, the first adjustment signal is applied to the bottom gate of the first transistor, and the second adjustment signal is applied to the bottom gate of the second transistor. a substrate; a first transistor and a second transistor on the substrate, directions of intrinsic threshold voltage shifts of the first transistor and the second transistor being opposite; and a shift adjustment structure on the substrate; wherein the shift adjustment structure is configured to input adjustment signals to the first transistor and the second transistor respectively to make threshold voltages of the first transistor and the second transistor shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively; characterized in that wherein the shift adjustment structure comprises an adjustment signal source, a switch unit and a signal lead, the adjustment signal source is connected to the switch unit, and the switch unit is connected to the signal lead; the adjustment signal source is configured to generate a first adjustment signal and a second adjustment signal that adjust the intrinsic threshold voltage shifts of the first transistor and the second transistor respectively; the first adjustment signal and the second adjustment signal have opposite polarities; the switch unit is configured to turn on or off the adjustment signal source; and the signal lead comprises a first lead and a second lead, the first lead is configured to input the first adjustment signal to the first transistor, and the second lead is configured to input the second adjustment signal to the second transistor; wherein the first transistor and the second transistor are top gate transistors, the first lead forms a bottom gate of the first transistor, and the second lead forms a bottom gate of the second transistor, thereby making the first transistor and the second transistor respectively form a double gate structure, the first adjustment signal is applied to the bottom gate of the first transistor, and the second adjustment signal is applied to the bottom gate of the second transistor.