A semiconductor device comprising: a first temperature sensor module; a second temperature sensor module; a first temperature controller that is coupled to the first temperature sensor module; and a second temperature controller that is coupled to the second temperature sensor module, wherein the first temperature sensor module comprises: a first bandgap reference circuit that outputs a first reference voltage and a plurality of divided voltages generated by dividing the first reference voltage with resistors; a first selecting circuit that is coupled to the first bandgap reference circuit, and selects, based on an instruction from the first temperature sensor controller, one of the plurality of divided voltage as a first divided voltage; and a first conversion circuit that performs analog-to-digital conversion processing on the first divided voltage based on the first reference voltage to generate a first digital value, wherein the second temperature sensor module comprises: a second bandgap reference circuit that outputs a second reference voltage; a second selecting circuit that receives the plurality of divided voltages output from the first bandgap reference circuit, and selects, based on an instruction from the second temperature sensor controller, the one of the plurality of divided voltage as a second divided voltage; and a second conversion circuit that performs analog-to-digital conversion processing on the second divided voltage based on the second reference voltage to generate a second digital value, wherein the first temperature sensor controller converts the first digital value to a first temperature using a preset relationship, wherein the second temperature sensor controller converts the second digital value to a second temperature using the preset relationship, wherein the preset relationship is defined by a graph or a table representing a correspondence between a voltage value and a temperature, the voltage value representing a proportional to absolute temperature, PTAT voltage, and wherein the semiconductor device determines that the first and second temperature modules (430, 440) operate normally by confirming that a difference between the first temperature and the second temperature is within a preset range. a first temperature sensor module; a second temperature sensor module; a first temperature controller that is coupled to the first temperature sensor module; and a second temperature controller that is coupled to the second temperature sensor module, wherein the first temperature sensor module comprises: a first bandgap reference circuit that outputs a first reference voltage and a plurality of divided voltages generated by dividing the first reference voltage with resistors; a first selecting circuit that is coupled to the first bandgap reference circuit, and selects, based on an instruction from the first temperature sensor controller, one of the plurality of divided voltage as a first divided voltage; and a first conversion circuit that performs analog-to-digital conversion processing on the first divided voltage based on the first reference voltage to generate a first digital value, a first bandgap reference circuit that outputs a first reference voltage and a plurality of divided voltages generated by dividing the first reference voltage with resistors; a first selecting circuit that is coupled to the first bandgap reference circuit, and selects, based on an instruction from the first temperature sensor controller, one of the plurality of divided voltage as a first divided voltage; and a first conversion circuit that performs analog-to-digital conversion processing on the first divided voltage based on the first reference voltage to generate a first digital value, wherein the second temperature sensor module comprises: a second bandgap reference circuit that outputs a second reference voltage; a second selecting circuit that receives the plurality of divided voltages output from the first bandgap reference circuit, and selects, based on an instruction from the second temperature sensor controller, the one of the plurality of divided voltage as a second divided voltage; and a second conversion circuit that performs analog-to-digital conversion processing on the second divided voltage based on the second reference voltage to generate a second digital value, a second bandgap reference circuit that outputs a second reference voltage; a second selecting circuit that receives the plurality of divided voltages output from the first bandgap reference circuit, and selects, based on an instruction from the second temperature sensor controller, the one of the plurality of divided voltage as a second divided voltage; and a second conversion circuit that performs analog-to-digital conversion processing on the second divided voltage based on the second reference voltage to generate a second digital value, wherein the first temperature sensor controller converts the first digital value to a first temperature using a preset relationship, wherein the second temperature sensor controller converts the second digital value to a second temperature using the preset relationship, wherein the preset relationship is defined by a graph or a table representing a correspondence between a voltage value and a temperature, the voltage value representing a proportional to absolute temperature, PTAT voltage, and wherein the semiconductor device determines that the first and second temperature modules (430, 440) operate normally by confirming that a difference between the first temperature and the second temperature is within a preset range.