A semiconductor light-emitting diode comprising: an n-type semiconductor layer including a nitride semiconductor; a p-type semiconductor layer including a nitride semiconductor; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including: a barrier layer including In b Ga 1-b N and having a layer thickness t b, where 0≤b<1; and a well layer stacked with the barrier layer, including In w Ga 1-w N, and having a layer thickness t w, where 0<w<1; and a stacked body provided between the light-emitting portion and the n-type semiconductor layer and including: a first layer including In x Ga 1-x N and having a layer thickness t x, where 0≤x<1; and a second layer stacked with the first layer, including In y Ga 1-y N, and having a layer thickness t y, where 0<y<1, and the layer thickness t b of the barrier layer being 10 nanometers or less, a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion, a thickness of the first layer being thicker than 1 nanometer and thinner than 3 nanometers, a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers, characterized by the average In composition ratio of the stacked body being higher than 0.4 times and not higher than 0.7 times the average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×t w + b×t b)/(t w +t b), and the average In composition ratio of the stacked body is (x×t x + y×t y)/(t x +t y). an n-type semiconductor layer including a nitride semiconductor; a p-type semiconductor layer including a nitride semiconductor; a light-emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including: a barrier layer including In b Ga 1-b N and having a layer thickness t b, where 0≤b<1; and a well layer stacked with the barrier layer, including In w Ga 1-w N, and having a layer thickness t w, where 0<w<1; and a barrier layer including In b Ga 1-b N and having a layer thickness t b, where 0≤b<1; and a well layer stacked with the barrier layer, including In w Ga 1-w N, and having a layer thickness t w, where 0<w<1; and a stacked body provided between the light-emitting portion and the n-type semiconductor layer and including: a first layer including In x Ga 1-x N and having a layer thickness t x, where 0≤x<1; and a second layer stacked with the first layer, including In y Ga 1-y N, and having a layer thickness t y, where 0<y<1, and the layer thickness t b of the barrier layer being 10 nanometers or less, a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion, a thickness of the first layer being thicker than 1 nanometer and thinner than 3 nanometers, a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers, characterized by the average In composition ratio of the stacked body being higher than 0.4 times and not higher than 0.7 times the average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×t w + b×t b)/(t w +t b), and the average In composition ratio of the stacked body is (x×t x + y×t y)/(t x +t y). a first layer including In x Ga 1-x N and having a layer thickness t x, where 0≤x<1; and a second layer stacked with the first layer, including In y Ga 1-y N, and having a layer thickness t y, where 0<y<1, and the layer thickness t b of the barrier layer being 10 nanometers or less, a thickness of the stacked body being equal to or greater than a thickness of the light-emitting portion, a thickness of the first layer being thicker than 1 nanometer and thinner than 3 nanometers, a thickness of the second layer being thicker than 0 nanometer and thinner than 2 nanometers, characterized by the average In composition ratio of the stacked body being higher than 0.4 times and not higher than 0.7 times the average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×t w + b×t b)/(t w +t b), and the average In composition ratio of the stacked body is (x×t x + y×t y)/(t x +t y).