A display device comprising: a first pixel; a second pixel adjacent to the first pixel in a predetermined direction; a first data line extending in the predetermined direction and connected to the first pixel; and a second data line extending in the predetermined direction and connected to the second pixel, each of the first pixel and the second pixel includes: a transistor (TR1, TR2) including a semiconductor layer (121, 122), a gate electrode (131, 132) disposed on the semiconductor layer (121, 122), and a source/drain electrode (141/142, 143/144) connected to the semiconductor layer (121, 122); a capacitor including a first capacitor electrode disposed in a same layer as the gate electrode (131, 132) and a second capacitor electrode disposed on the first capacitor electrode; and a light emitting device disposed on the transistor (TR1, TR2) and the capacitor, and wherein the first data line is disposed in a same layer as the source/drain electrode (141/142, 143/144), and the second data line is disposed in a same layer as one of the conductive layer (111, 112) and the second capacitor electrode; characterized in that the transistor (TR1, TR2) comprises a conductive layer (111, 112) disposed under the semiconductor layer (121, 122); wherein an insulating layer is disposed on the second capacitor electrode and under the source/drain electrode (141/142, 143/144). a first pixel; a second pixel adjacent to the first pixel in a predetermined direction; a first data line extending in the predetermined direction and connected to the first pixel; and a second data line extending in the predetermined direction and connected to the second pixel, each of the first pixel and the second pixel includes: a transistor (TR1, TR2) including a semiconductor layer (121, 122), a gate electrode (131, 132) disposed on the semiconductor layer (121, 122), and a source/drain electrode (141/142, 143/144) connected to the semiconductor layer (121, 122); a capacitor including a first capacitor electrode disposed in a same layer as the gate electrode (131, 132) and a second capacitor electrode disposed on the first capacitor electrode; and a light emitting device disposed on the transistor (TR1, TR2) and the capacitor, and wherein a transistor (TR1, TR2) including a semiconductor layer (121, 122), a gate electrode (131, 132) disposed on the semiconductor layer (121, 122), and a source/drain electrode (141/142, 143/144) connected to the semiconductor layer (121, 122); a capacitor including a first capacitor electrode disposed in a same layer as the gate electrode (131, 132) and a second capacitor electrode disposed on the first capacitor electrode; and a light emitting device disposed on the transistor (TR1, TR2) and the capacitor, and wherein the first data line is disposed in a same layer as the source/drain electrode (141/142, 143/144), and the second data line is disposed in a same layer as one of the conductive layer (111, 112) and the second capacitor electrode; characterized in that the transistor (TR1, TR2) comprises a conductive layer (111, 112) disposed under the semiconductor layer (121, 122); wherein an insulating layer is disposed on the second capacitor electrode and under the source/drain electrode (141/142, 143/144).