An organic light emitting diode display comprising: a substrate; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor coupled to the scan line and the data line; a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor; a first gate insulating layer covering the driving semiconductor layer; and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to a surface of the substrate, characterized by further comprising a storage capacitor (Cst) comprising: a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer; a second insulating layer covering the first storage capacitor plate; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer, wherein the driving gate electrode is the same plate as the first storage capacitor plate. a substrate; a scan line on the substrate for transferring a scan signal; a data line crossing the scan line and for transferring a data signal; a driving voltage line crossing the scan line and for transferring a driving voltage; a switching thin film transistor coupled to the scan line and the data line; a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor; a first gate insulating layer covering the driving semiconductor layer; and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to a surface of the substrate, characterized by further comprising a storage capacitor (Cst) comprising: a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer; a second insulating layer covering the first storage capacitor plate; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer, wherein the driving gate electrode is the same plate as the first storage capacitor plate. a first storage capacitor plate on the first gate insulating layer and overlapping the driving semiconductor layer; a second insulating layer covering the first storage capacitor plate; and a second storage capacitor plate on the second insulating layer and overlapping the first storage capacitor plate and the driving thin film transistor comprising a driving gate electrode on the first gate insulating layer and overlapping the driving semiconductor layer, wherein the driving gate electrode is the same plate as the first storage capacitor plate.