A semiconductor module comprising: an insulation substrate; a first element bonding conductor layer and a second element bonding conductor layer formed on the surface of the insulating substrate and arranged side by side in a predetermined first direction (Y direction); a plurality of first semiconductor devices having electrodes on the front surface and the back surface and respectively bonded to the first element bonding conductor layer; a plurality of second semiconductor devices having electrodes on the front surface and the back surface and bonded to the second element bonding conductor layer; and a plurality of first wires that electrically connect the electrode on the surface side of the first semiconductor element and the second element bonding conductor layer; wherein the first element bonding conductor layer has a rectangular shape elongated in the second direction (X direction) orthogonal to the first direction in a plan view, and has a first part that is located on one side (+X direction side) of both sides of the second direction (X direction) side, and the second element bonding conductor layer has a rectangular shape elongated in the second direction (X direction) in a plan view and has a second portion located on the other side (-X direction side) of both sides of the second direction (X direction) side, the semiconductor module comprising: a first terminal electrically connected to the first portion of the first element bonding conductor layer; a second terminal electrically connected to an electrode on the surface side of the second semiconductor element and is disposed at an interval in the first direction (Y direction) with respect to the first terminal in a plan view; a third terminal electrically connected to the second portion of the second element bonding conductor layer; a first control terminal for controlling the first semiconductor element; and a second control terminal for controlling the second semiconductor element, wherein a plurality of the first element bonding conductor layers and a plurality of the second element bonding conductor layers are disposed along the second direction (X direction), respectively. an insulation substrate; a first element bonding conductor layer and a second element bonding conductor layer formed on the surface of the insulating substrate and arranged side by side in a predetermined first direction (Y direction); a plurality of first semiconductor devices having electrodes on the front surface and the back surface and respectively bonded to the first element bonding conductor layer; a plurality of second semiconductor devices having electrodes on the front surface and the back surface and bonded to the second element bonding conductor layer; and a plurality of first wires that electrically connect the electrode on the surface side of the first semiconductor element and the second element bonding conductor layer; wherein the first element bonding conductor layer has a rectangular shape elongated in the second direction (X direction) orthogonal to the first direction in a plan view, and has a first part that is located on one side (+X direction side) of both sides of the second direction (X direction) side, and the second element bonding conductor layer has a rectangular shape elongated in the second direction (X direction) in a plan view and has a second portion located on the other side (-X direction side) of both sides of the second direction (X direction) side, the semiconductor module comprising: a first terminal electrically connected to the first portion of the first element bonding conductor layer; a second terminal electrically connected to an electrode on the surface side of the second semiconductor element and is disposed at an interval in the first direction (Y direction) with respect to the first terminal in a plan view; a third terminal electrically connected to the second portion of the second element bonding conductor layer; a first control terminal for controlling the first semiconductor element; and a second control terminal for controlling the second semiconductor element, wherein a plurality of the first element bonding conductor layers and a plurality of the second element bonding conductor layers are disposed along the second direction (X direction), respectively. a first terminal electrically connected to the first portion of the first element bonding conductor layer; a second terminal electrically connected to an electrode on the surface side of the second semiconductor element and is disposed at an interval in the first direction (Y direction) with respect to the first terminal in a plan view; a third terminal electrically connected to the second portion of the second element bonding conductor layer; a first control terminal for controlling the first semiconductor element; and a second control terminal for controlling the second semiconductor element, wherein a plurality of the first element bonding conductor layers and a plurality of the second element bonding conductor layers are disposed along the second direction (X direction), respectively.