A power semiconductor module comprising: a power semiconductor element containing a plurality of control electrodes (328a, 328c) on one main surface; a first conductor plate bonded by way of a first solder material to a first main surface of the power semiconductor element; and a second conductor plate bonded by way of a second solder material to a second main surface of the power semiconductor element facing opposite the first main surface, wherein a first protrusion section (318h, 318i, 315h, 315i) protruding from the base section of the applicable first conductor plate and including a first protrusion surface (318f, 318d, 315f, 315d) formed over the upper surface is formed over a first conductor plate; the power semiconductor module further comprising: a second protrusion section (318j, 318k, 315j, 315k) of the first conductor plate including a second protrusion surface (322a, 322b, 352a, 352b) formed facing towards one of the first and second main surfaces of the power semiconductor element is formed over the first protrusion surface of the first conductor plate and is further bonded to the emitter electrode of the power semiconductor element, a first solder material interposed between the power semiconductor element and the second protrusion surface of the first conductor plate, and when there is a perpendicular projection from one of the first and second main surfaces of the power semiconductor element, and characterized in that the second protrusion section is formed so that the projecting section on a side of the second protrusion surface overlaps the projecting section of a step section formed between the first protrusion section and the base section of the first conductor plate, and plurality of control electrodes (328a, 328c) on the power semiconductor element are formed along the side of the second protrusion surface. a power semiconductor element containing a plurality of control electrodes (328a, 328c) on one main surface; a first conductor plate bonded by way of a first solder material to a first main surface of the power semiconductor element; and a second conductor plate bonded by way of a second solder material to a second main surface of the power semiconductor element facing opposite the first main surface, wherein a first protrusion section (318h, 318i, 315h, 315i) protruding from the base section of the applicable first conductor plate and including a first protrusion surface (318f, 318d, 315f, 315d) formed over the upper surface is formed over a first conductor plate; the power semiconductor module further comprising: a second protrusion section (318j, 318k, 315j, 315k) of the first conductor plate including a second protrusion surface (322a, 322b, 352a, 352b) formed facing towards one of the first and second main surfaces of the power semiconductor element is formed over the first protrusion surface of the first conductor plate and is further bonded to the emitter electrode of the power semiconductor element, a first solder material interposed between the power semiconductor element and the second protrusion surface of the first conductor plate, and when there is a perpendicular projection from one of the first and second main surfaces of the power semiconductor element, and characterized in that the second protrusion section is formed so that the projecting section on a side of the second protrusion surface overlaps the projecting section of a step section formed between the first protrusion section and the base section of the first conductor plate, and plurality of control electrodes (328a, 328c) on the power semiconductor element are formed along the side of the second protrusion surface. a second protrusion section (318j, 318k, 315j, 315k) of the first conductor plate including a second protrusion surface (322a, 322b, 352a, 352b) formed facing towards one of the first and second main surfaces of the power semiconductor element is formed over the first protrusion surface of the first conductor plate and is further bonded to the emitter electrode of the power semiconductor element, a first solder material interposed between the power semiconductor element and the second protrusion surface of the first conductor plate, and when there is a perpendicular projection from one of the first and second main surfaces of the power semiconductor element, and characterized in that the second protrusion section is formed so that the projecting section on a side of the second protrusion surface overlaps the projecting section of a step section formed between the first protrusion section and the base section of the first conductor plate, and plurality of control electrodes (328a, 328c) on the power semiconductor element are formed along the side of the second protrusion surface.