A receiver control circuit, comprising: a smart power amplifier module, a coder-decoder, and a receiver; a first switch module, wherein the smart power amplifier module is electrically connected to the receiver by the first switch module; characterized in that the first switch module comprises a first switch component unit, wherein the first switch component unit is connected between the smart power amplifier module and the receiver, the first switch component unit is configured to control continuity and cutoff between the smart power amplifier module and the receiver, and the first switch component unit is formed by a metal oxide semiconductor field-effect transistor MOSFET; the MOSFET of the first switch component unit is of N-type, a drain electrode of the MOSFET of the first switch component unit is electrically connected to the smart power amplifier module, and a source electrode of the MOSFET of the first switch component unit is electrically connected to the receiver; and the first switch module further comprises a first follower unit, wherein the first follower unit is configured to keep an unchanged voltage difference between a gate electrode of the MOSFET of the first switch component unit and the drain electrode thereof, and a gate electrode voltage of the MOSFET of the first switch component unit is greater than a drain electrode voltage thereof, and in that the receiver control circuit further comprises a second switch module, wherein the coder-decoder is electrically connected to the receiver by the second switch module; and the second switch module comprises a second switch component unit, wherein the second switch component unit is connected between the coder-decoder and the receiver, the second switch component unit is configured to control continuity and cutoff between the coder-decoder and the receiver, and the second switch component unit is formed by a metal oxide semiconductor field-effect transistor MOSFET, a source electrode of the MOSFET of the second switch component unit is electrically connected to the coder-decoder, and a drain electrode of the MOSFET of the second switch component unit is electrically connected to the receiver. a smart power amplifier module, a coder-decoder, and a receiver; a first switch module, wherein the smart power amplifier module is electrically connected to the receiver by the first switch module; characterized in that the first switch module comprises a first switch component unit, wherein the first switch component unit is connected between the smart power amplifier module and the receiver, the first switch component unit is configured to control continuity and cutoff between the smart power amplifier module and the receiver, and the first switch component unit is formed by a metal oxide semiconductor field-effect transistor MOSFET; the MOSFET of the first switch component unit is of N-type, a drain electrode of the MOSFET of the first switch component unit is electrically connected to the smart power amplifier module, and a source electrode of the MOSFET of the first switch component unit is electrically connected to the receiver; and the first switch module further comprises a first follower unit, wherein the first follower unit is configured to keep an unchanged voltage difference between a gate electrode of the MOSFET of the first switch component unit and the drain electrode thereof, and a gate electrode voltage of the MOSFET of the first switch component unit is greater than a drain electrode voltage thereof, and in that the receiver control circuit further comprises a second switch module, wherein the coder-decoder is electrically connected to the receiver by the second switch module; and the second switch module comprises a second switch component unit, wherein the second switch component unit is connected between the coder-decoder and the receiver, the second switch component unit is configured to control continuity and cutoff between the coder-decoder and the receiver, and the second switch component unit is formed by a metal oxide semiconductor field-effect transistor MOSFET, a source electrode of the MOSFET of the second switch component unit is electrically connected to the coder-decoder, and a drain electrode of the MOSFET of the second switch component unit is electrically connected to the receiver.