A semi-conducting structure able to receive an electromagnetic radiation (λ) and to transform it into an electrical signal, said structure including an operating temperature rating, such a structure including: - a first and a second zone (20, 60) of a same conductivity type and respectively made of a first and a second semi-conductor material, said first and second semi-conductor materials both being constituted of the same elements, said elements being called constituent elements, a different proportion in at least two of these constituent elements corresponding to a bandgap energy difference of said material, the first material being a direct bandgap semi-conductor material, - a barrier zone, provided between the first and second zones (20, 60), for acting as a barrier to the majority carriers of the first and the second zones (20, 60) on a barrier thickness (e 1), said barrier zone being constituted of the constituent elements and having on the entire barrier thickness (e 1) a proportion of constituent elements such that the barrier zone has a bandgap energy minimum higher than the bandgap energy of the first zone and which is such that the difference in absolute value between the energy of the energy band extremum corresponding to the majority carrier for the bandgap energy minimum of the barrier zone and the energy of this same extremum of the second zone is equal to at least 10 times the heat energy at the operating temperature rating, the proportion of constituent elements for which the barrier zone has the lowest bandgap energy defining the barrier proportion (X b), the structure being characterised in that it includes a first interface zone arranged to interface the first zone and the barrier zone on a first interface thickness (e 2), the first interface zone having a composition of constituent elements which is varied on the entire interface thickness (e 2) and from the first zone to the barrier zone, from a proportion corresponding to that of the first material to the barrier proportion (X b), the first interface thickness (e 2) being at least equal to half the barrier thickness (e 1) and wherein is provided a second interface zone arranged to interface the barrier zone and the second zone on a second interface thickness (e 3), the second interface zone having a composition of constituent elements which is varied, on the entire second interface thickness (e 3) and from the barrier zone to the second zone, of the barrier proportion (X b) to a composition corresponding to that of the second material (X 2), the second interface thickness (e 3) being lower than half the barrier thickness (e 1). - a first and a second zone (20, 60) of a same conductivity type and respectively made of a first and a second semi-conductor material, said first and second semi-conductor materials both being constituted of the same elements, said elements being called constituent elements, a different proportion in at least two of these constituent elements corresponding to a bandgap energy difference of said material, the first material being a direct bandgap semi-conductor material, - a barrier zone, provided between the first and second zones (20, 60), for acting as a barrier to the majority carriers of the first and the second zones (20, 60) on a barrier thickness (e 1), said barrier zone being constituted of the constituent elements and having on the entire barrier thickness (e 1) a proportion of constituent elements such that the barrier zone has a bandgap energy minimum higher than the bandgap energy of the first zone and which is such that the difference in absolute value between the energy of the energy band extremum corresponding to the majority carrier for the bandgap energy minimum of the barrier zone and the energy of this same extremum of the second zone is equal to at least 10 times the heat energy at the operating temperature rating, the proportion of constituent elements for which the barrier zone has the lowest bandgap energy defining the barrier proportion (X b), the structure being characterised in that it includes a first interface zone arranged to interface the first zone and the barrier zone on a first interface thickness (e 2), the first interface zone having a composition of constituent elements which is varied on the entire interface thickness (e 2) and from the first zone to the barrier zone, from a proportion corresponding to that of the first material to the barrier proportion (X b), the first interface thickness (e 2) being at least equal to half the barrier thickness (e 1) and wherein is provided a second interface zone arranged to interface the barrier zone and the second zone on a second interface thickness (e 3), the second interface zone having a composition of constituent elements which is varied, on the entire second interface thickness (e 3) and from the barrier zone to the second zone, of the barrier proportion (X b) to a composition corresponding to that of the second material (X 2), the second interface thickness (e 3) being lower than half the barrier thickness (e 1).