A semiconductor device package comprising: a package lead frame (420, 1215); a first semiconductor device die coupled to the package lead frame; and encapsulant (510, 1245) formed over a top surface of the first semiconductor device die and at least a portion of the lead frame, the encapsulant defining: a cavity region over a first portion of the top surface, the cavity region formable by a film-assisted molding technique (520, 530) and the first portion of the top surface of the first semiconductor device die being exposed in the cavity region; a gel stop feature along a wall of the cavity region comprising a gel level set feature (630, 1250) and a gel overflow reservoir (620, 1260), the gel stop feature being configured to permit a portion of a silicone gel, when added to the cavity, to crest the gel level set feature and to settle in the gel overflow reservoir when an initial depth of the silicone gel is higher than the gel stop feature; and a lid attach shoulder in the wall of the cavity region, wherein a bottom portion of the lid attach shoulder is above a maximum silicone gel depth permitted by the gel stop feature and a perimeter of the lid attach shoulder is greater than a perimeter of the bottom surface of the cavity; the semiconductor device package further comprising: a second semiconductor device die affixed on at least a portion of the first portion of the top surface. a package lead frame (420, 1215); a first semiconductor device die coupled to the package lead frame; and encapsulant (510, 1245) formed over a top surface of the first semiconductor device die and at least a portion of the lead frame, the encapsulant defining: a cavity region over a first portion of the top surface, the cavity region formable by a film-assisted molding technique (520, 530) and the first portion of the top surface of the first semiconductor device die being exposed in the cavity region; a gel stop feature along a wall of the cavity region comprising a gel level set feature (630, 1250) and a gel overflow reservoir (620, 1260), the gel stop feature being configured to permit a portion of a silicone gel, when added to the cavity, to crest the gel level set feature and to settle in the gel overflow reservoir when an initial depth of the silicone gel is higher than the gel stop feature; and a cavity region over a first portion of the top surface, the cavity region formable by a film-assisted molding technique (520, 530) and the first portion of the top surface of the first semiconductor device die being exposed in the cavity region; a gel stop feature along a wall of the cavity region comprising a gel level set feature (630, 1250) and a gel overflow reservoir (620, 1260), the gel stop feature being configured to permit a portion of a silicone gel, when added to the cavity, to crest the gel level set feature and to settle in the gel overflow reservoir when an initial depth of the silicone gel is higher than the gel stop feature; and a lid attach shoulder in the wall of the cavity region, wherein a bottom portion of the lid attach shoulder is above a maximum silicone gel depth permitted by the gel stop feature and a perimeter of the lid attach shoulder is greater than a perimeter of the bottom surface of the cavity; the semiconductor device package further comprising: a second semiconductor device die affixed on at least a portion of the first portion of the top surface.