A light emitting element comprising: a first conductivity type semiconductor layer, a first electrode disposed on a region of the first conductivity type semiconductor layer; a second conductivity type semiconductor layer disposed on an another region of the first conductivity type semiconductor layer to surround the first electrode; and a second electrode disposed on the second conductivity type semiconductor layer; in a plan view, the second conductivity type semiconductor layer has an outer periphery in a square shape which includes a first diagonal line and a second diagonal line; characterized in that the first electrode includes a first connecting portion arranged on the first diagonal line and a first extending portion extending from the first connecting portion on the first diagonal line; the second electrode includes a second connecting portion arranged on the first diagonal line to face the first connecting portion via the first extending portion which extends on the first diagonal line from the first connecting portion towards the second connecting portion, and two second extending portions which are symmetrical with respect to the first diagonal line, and respectively including a first portion extending from the second connecting portion on each side of the first diagonal line, and a second portion extending from the first portion in a linear shape, interposing the first diagonal line with two second portions; and the first connecting portion includes an end portion closer to the second connecting portion being arranged closer to the second connecting portion than a straight line connecting the tip ends (22a, 22b) of the two second extending portions, and a center portion of the first connecting portion being arranged farther side from the second connecting portion than the second diagonal line. a first conductivity type semiconductor layer, a first electrode disposed on a region of the first conductivity type semiconductor layer; a second conductivity type semiconductor layer disposed on an another region of the first conductivity type semiconductor layer to surround the first electrode; and a second electrode disposed on the second conductivity type semiconductor layer; in a plan view, the second conductivity type semiconductor layer has an outer periphery in a square shape which includes a first diagonal line and a second diagonal line; characterized in that the first electrode includes a first connecting portion arranged on the first diagonal line and a first extending portion extending from the first connecting portion on the first diagonal line; the second electrode includes a second connecting portion arranged on the first diagonal line to face the first connecting portion via the first extending portion which extends on the first diagonal line from the first connecting portion towards the second connecting portion, and two second extending portions which are symmetrical with respect to the first diagonal line, and respectively including a first portion extending from the second connecting portion on each side of the first diagonal line, and a second portion extending from the first portion in a linear shape, interposing the first diagonal line with two second portions; and the first connecting portion includes an end portion closer to the second connecting portion being arranged closer to the second connecting portion than a straight line connecting the tip ends (22a, 22b) of the two second extending portions, and a center portion of the first connecting portion being arranged farther side from the second connecting portion than the second diagonal line.