A light emitting device package comprising: a package body comprising a cavity in an upper portion thereof and having a first conductivity type dopant; an insulating layer on the package body; a plurality of compound semiconductor layers; an electrode on the plurality of compound semiconductor layers; a first metal layer electrically connected to the package body and disposed on a part of the insulating layer; and a second metal layer electrically connected to the electrode and disposed on another part of the insulating layer, characterized in that it comprises: wherein the plurality of compound semiconductor layers is grown on a bottom surface of the cavity of the package body, wherein the insulating layer comprises a second opening formed on a portion of the bottom surface of the package body, wherein the first metal layer comprises a body contact part contacting the bottom surface of the package body through said second opening of the insulating layer, wherein the plurality of compound semiconductor layers comprise a conductivity type buffer layer contacting the bottom surface of the cavity of the package body, and wherein the conductivity type buffer layer is doped with a first conductivity 2. type dopant, wherein the insulating layer comprises: a first opening in the bottom surface of the cavity to contact the conductivity type buffer layer, and wherein the body contact part of the first metal layer is electrically connected to the conductivity type buffer layer through the package body, wherein the package body is an electrical conductive material, wherein the conductivity type buffer layer directly contacts with a surface of the package body in the first opening vertically overlapped with the plurality of compound semiconductor layers, wherein the conductivity type buffer layer is electrically connected to the surface of the package body in the first opening. a package body comprising a cavity in an upper portion thereof and having a first conductivity type dopant; an insulating layer on the package body; a plurality of compound semiconductor layers; an electrode on the plurality of compound semiconductor layers; a first metal layer electrically connected to the package body and disposed on a part of the insulating layer; and a second metal layer electrically connected to the electrode and disposed on another part of the insulating layer, wherein the plurality of compound semiconductor layers is grown on a bottom surface of the cavity of the package body, wherein the insulating layer comprises a second opening formed on a portion of the bottom surface of the package body, wherein the first metal layer comprises a body contact part contacting the bottom surface of the package body through said second opening of the insulating layer, wherein the plurality of compound semiconductor layers comprise a conductivity type buffer layer contacting the bottom surface of the cavity of the package body, and wherein the conductivity type buffer layer is doped with a first conductivity 2. type dopant, wherein the insulating layer comprises: a first opening in the bottom surface of the cavity to contact the conductivity type buffer layer, and wherein the body contact part of the first metal layer is electrically connected to the conductivity type buffer layer through the package body, wherein the package body is an electrical conductive material, wherein the conductivity type buffer layer directly contacts with a surface of the package body in the first opening vertically overlapped with the plurality of compound semiconductor layers, wherein the conductivity type buffer layer is electrically connected to the surface of the package body in the first opening.