A semiconductor light-emitting device having a substrate (4; 204; 304) on which a semiconductor multilayer film is disposed, the semiconductor multilayer film having a layered structure in which a first conductive layer (14; 314), a light-emitting layer (16; 316) and a second conductive layer (18; 318) are layered above the substrate (4; 204; 304) from bottom to top in the stated order, and being divided into portions by grooves extending perpendicular to the substrate (4; 204; 304), each portion having a diode structure and serving as a light-emitting element, characterized by: each light-emitting element having a hole (22; 322) in a central portion thereof in plan view, the hole (22; 322) penetrating through the second conductive layer (18; 318) and the light-emitting layer (16; 316) and reaching the first conductive layer (14; 314), and comprising: a first electrode (24; 308) inserted in the hole (22; 322) and having a columnar shape, one end thereof being connected to the first conductive layer (14; 314) at the bottom of the hole (22; 322), and the other end protruding from an opening of the hole (22; 322); and a second electrode (26; 310) formed on the second conductive layer and having a annular shape surrounding the opening of the hole (22; 322), wherein a set of at least two of the light-emitting elements are connected in series such that the first electrode (24; 308) of one light-emitting element is connected to the second electrode (26; 310) of another light-emitting element by a thin-film wire (28, 30; 326, 328), and the semiconductor light-emitting device further comprises: a first power supply terminal connected to the first electrode (24; 308) of one light-emitting element that is located at one end of the series; and a second power supply terminal connected to the second electrode (26; 310) of another light-emitting element that is located at the other end of the series. each light-emitting element having a hole (22; 322) in a central portion thereof in plan view, the hole (22; 322) penetrating through the second conductive layer (18; 318) and the light-emitting layer (16; 316) and reaching the first conductive layer (14; 314), and comprising: a first electrode (24; 308) inserted in the hole (22; 322) and having a columnar shape, one end thereof being connected to the first conductive layer (14; 314) at the bottom of the hole (22; 322), and the other end protruding from an opening of the hole (22; 322); and a second electrode (26; 310) formed on the second conductive layer and having a annular shape surrounding the opening of the hole (22; 322), wherein a set of at least two of the light-emitting elements are connected in series such that the first electrode (24; 308) of one light-emitting element is connected to the second electrode (26; 310) of another light-emitting element by a thin-film wire (28, 30; 326, 328), and the semiconductor light-emitting device further comprises: a first power supply terminal connected to the first electrode (24; 308) of one light-emitting element that is located at one end of the series; and a second power supply terminal connected to the second electrode (26; 310) of another light-emitting element that is located at the other end of the series. having a hole (22; 322) in a central portion thereof in plan view, the hole (22; 322) penetrating through the second conductive layer (18; 318) and the light-emitting layer (16; 316) and reaching the first conductive layer (14; 314), and comprising: a first electrode (24; 308) inserted in the hole (22; 322) and having a columnar shape, one end thereof being connected to the first conductive layer (14; 314) at the bottom of the hole (22; 322), and the other end protruding from an opening of the hole (22; 322); and a second electrode (26; 310) formed on the second conductive layer and having a annular shape surrounding the opening of the hole (22; 322), wherein a set of at least two of the light-emitting elements are connected in series such that the first electrode (24; 308) of one light-emitting element is connected to the second electrode (26; 310) of another light-emitting element by a thin-film wire (28, 30; 326, 328), and a first electrode (24; 308) inserted in the hole (22; 322) and having a columnar shape, one end thereof being connected to the first conductive layer (14; 314) at the bottom of the hole (22; 322), and the other end protruding from an opening of the hole (22; 322); and a second electrode (26; 310) formed on the second conductive layer and having a annular shape surrounding the opening of the hole (22; 322), wherein a set of at least two of the light-emitting elements are connected in series such that the first electrode (24; 308) of one light-emitting element is connected to the second electrode (26; 310) of another light-emitting element by a thin-film wire (28, 30; 326, 328), and the semiconductor light-emitting device further comprises: a first power supply terminal connected to the first electrode (24; 308) of one light-emitting element that is located at one end of the series; and a second power supply terminal connected to the second electrode (26; 310) of another light-emitting element that is located at the other end of the series. a first power supply terminal connected to the first electrode (24; 308) of one light-emitting element that is located at one end of the series; and a second power supply terminal connected to the second electrode (26; 310) of another light-emitting element that is located at the other end of the series.