A semiconductor component comprising: a lateral semiconductor device having a first side and a second side, the lateral semiconductor device having an active region, positioned on the first side comprising a first electrode a second electrode, and a control electrode; a vertical semiconductor device having a first side and a second side, the vertical semiconductor device comprising a first electrode positioned on the first side and a second electrode and a control electrode positioned on the second side; and a leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device and the control electrodes (115, 125), wherein the first side of the lateral semiconductor device faces to the leadframe; characterized in further comprising: a conductive layer on the second side of the lateral semiconductor device, wherein the first electrode of the vertical semiconductor device contacts the conductive layer, and a first connector electrically connects the first electrode of the lateral semiconductor device and the conductive layer; wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and wherein the first electrode of the lateral semiconductor device is also electrically connected to the first electrode of the vertical semiconductor device. a lateral semiconductor device having a first side and a second side, the lateral semiconductor device having an active region, positioned on the first side comprising a first electrode a second electrode, and a control electrode; a vertical semiconductor device having a first side and a second side, the vertical semiconductor device comprising a first electrode positioned on the first side and a second electrode and a control electrode positioned on the second side; and a leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device and the control electrodes (115, 125), wherein the first side of the lateral semiconductor device faces to the leadframe; characterized in further comprising: a conductive layer on the second side of the lateral semiconductor device, wherein the first electrode of the vertical semiconductor device contacts the conductive layer, and a first connector electrically connects the first electrode of the lateral semiconductor device and the conductive layer; wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and wherein the first electrode of the lateral semiconductor device is also electrically connected to the first electrode of the vertical semiconductor device. a conductive layer on the second side of the lateral semiconductor device, wherein the first electrode of the vertical semiconductor device contacts the conductive layer, and a first connector electrically connects the first electrode of the lateral semiconductor device and the conductive layer; wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and wherein the first electrode of the lateral semiconductor device is also electrically connected to the first electrode of the vertical semiconductor device.