An organic light emitting display device, comprising: an anode (202, 302, 402, 602, 702, 802) on a substrate (201, 301, 401, 601, 701, 801); a first emission part (210, 310, 410, 610, 710, 810) on the anode (202, 302, 402, 602, 702, 802), the first emission part (210, 310, 410, 610, 710, 810) including a first hole transfer layer (212, 312, 412, 612, 712, 812), a first emission layer (214, 314, 414, 614, 714, 814), and a first electron transfer layer (216, 316, 416, 616, 716, 816); a second emission part (220, 320, 420, 620, 720, 820) on the first emission part (210, 310, 410 610, 710, 810), the second emission part (220, 320, 420, 620, 720, 820) including a second hole transfer layer (222, 322, 422, 622, 722, 822), a second emission layer (224, 324, 424, 624, 724, 824), and a second electron transfer layer (226, 326, 426, 626, 726, 826); and a cathode (204,304, 404, 604, 704, 804) on the second emission part (220, 320, 420, 620, 720, 820), wherein at least one among the first emission part (310, 410, 610, 710, 810) and the second emission part (320, 420, 620, 720, 820) comprises an emission control layer (323, 413, 423, 613, 723, 813, 823) having an absolute value of a highest occupied molecular orbitals, HOMO, energy level which is larger than an absolute value of a HOMO energy level of the first hole transfer layer (412, 612, 812) or the second hole transfer layer (322, 422, 722, 822), wherein the emission control layer is provided between the first hole transfer layer (412, 612, 812) and the first emission layer (414, 614, 814) and/or between the second hole transfer layer (322, 422, 722, 822) and the second emission layer (324, 424, 724, 824), wherein the organic light emitting display device further comprises an N-type charge generation layer (541, 641, 741, 841) between the first emission part (510, 610, 710, 720) and the second emission part (520, 620, 720, 820), characterized in that the first electron transfer layer (516, 616, 716, 816) comprises a material having an energy bandgap which is 0.50eV to 1.00eV higher than an energy bandgap of a host included in the N-type charge generation layer. an anode (202, 302, 402, 602, 702, 802) on a substrate (201, 301, 401, 601, 701, 801); a first emission part (210, 310, 410, 610, 710, 810) on the anode (202, 302, 402, 602, 702, 802), the first emission part (210, 310, 410, 610, 710, 810) including a first hole transfer layer (212, 312, 412, 612, 712, 812), a first emission layer (214, 314, 414, 614, 714, 814), and a first electron transfer layer (216, 316, 416, 616, 716, 816); a second emission part (220, 320, 420, 620, 720, 820) on the first emission part (210, 310, 410 610, 710, 810), the second emission part (220, 320, 420, 620, 720, 820) including a second hole transfer layer (222, 322, 422, 622, 722, 822), a second emission layer (224, 324, 424, 624, 724, 824), and a second electron transfer layer (226, 326, 426, 626, 726, 826); and a cathode (204,304, 404, 604, 704, 804) on the second emission part (220, 320, 420, 620, 720, 820), wherein at least one among the first emission part (310, 410, 610, 710, 810) and the second emission part (320, 420, 620, 720, 820) comprises an emission control layer (323, 413, 423, 613, 723, 813, 823) having an absolute value of a highest occupied molecular orbitals, HOMO, energy level which is larger than an absolute value of a HOMO energy level of the first hole transfer layer (412, 612, 812) or the second hole transfer layer (322, 422, 722, 822), wherein the emission control layer is provided between the first hole transfer layer (412, 612, 812) and the first emission layer (414, 614, 814) and/or between the second hole transfer layer (322, 422, 722, 822) and the second emission layer (324, 424, 724, 824), wherein the organic light emitting display device further comprises an N-type charge generation layer (541, 641, 741, 841) between the first emission part (510, 610, 710, 720) and the second emission part (520, 620, 720, 820), characterized in that the first electron transfer layer (516, 616, 716, 816) comprises a material having an energy bandgap which is 0.50eV to 1.00eV higher than an energy bandgap of a host included in the N-type charge generation layer.