A method of manufacturing a working semiconductor wafer structure for semiconductor device fabrication thereon, the method comprising: starting with a native semiconductor growth wafer comprising: a native growth substrate having a first lattice constant x 1; an active semiconductor layer structure having a second lattice constant x 2 different from said first lattice constant x 1 by at least 1%; and one or more single crystal strain-matching layers disposed between the native growth substrate and the active semiconductor layer structure; transferring at least a portion of the active semiconductor layer structure to a working substrate; and removing at least a portion of the one or more single crystal strain-matching layers of the native semiconductor, whereby the working semiconductor wafer structure is formed and comprises the working substrate, at least a portion of the active semiconductor layer structure of the native semiconductor growth wafer, but does not include at least a portion of the one or more single crystal strain-matching layers of the native semiconductor growth wafer, wherein the transferring and removing steps comprise: attaching a transfer substrate to the active semiconductor layer structure of the native semiconductor growth wafer; removing the native growth substrate; removing the one or more single crystal strain-matching layers of the native semiconductor; attaching the working substrate to the active semiconductor layer structure; and removing the transfer substrate to form a working surface of the active semiconductor layer structure in the working semiconductor wafer structure, and wherein the working substrate comprises polycrystalline diamond and the step of attaching the working substrate to the active semiconductor layer structure comprises depositing polycrystalline diamond over the active semiconductor layer structure using a chemical vapour deposition, CVD, technique after removing the one or more single crystal strain-matching layers of the native semiconductor. starting with a native semiconductor growth wafer comprising: a native growth substrate having a first lattice constant x 1; an active semiconductor layer structure having a second lattice constant x 2 different from said first lattice constant x 1 by at least 1%; and one or more single crystal strain-matching layers disposed between the native growth substrate and the active semiconductor layer structure; a native growth substrate having a first lattice constant x 1; an active semiconductor layer structure having a second lattice constant x 2 different from said first lattice constant x 1 by at least 1%; and one or more single crystal strain-matching layers disposed between the native growth substrate and the active semiconductor layer structure; transferring at least a portion of the active semiconductor layer structure to a working substrate; and removing at least a portion of the one or more single crystal strain-matching layers of the native semiconductor, whereby the working semiconductor wafer structure is formed and comprises the working substrate, at least a portion of the active semiconductor layer structure of the native semiconductor growth wafer, but does not include at least a portion of the one or more single crystal strain-matching layers of the native semiconductor growth wafer, wherein the transferring and removing steps comprise: attaching a transfer substrate to the active semiconductor layer structure of the native semiconductor growth wafer; removing the native growth substrate; removing the one or more single crystal strain-matching layers of the native semiconductor; attaching the working substrate to the active semiconductor layer structure; and removing the transfer substrate to form a working surface of the active semiconductor layer structure in the working semiconductor wafer structure, and wherein the working substrate comprises polycrystalline diamond and the step of attaching the working substrate to the active semiconductor layer structure comprises depositing polycrystalline diamond over the active semiconductor layer structure using a chemical vapour deposition, CVD, technique after removing the one or more single crystal strain-matching layers of the native semiconductor. attaching a transfer substrate to the active semiconductor layer structure of the native semiconductor growth wafer; removing the native growth substrate; removing the one or more single crystal strain-matching layers of the native semiconductor; attaching the working substrate to the active semiconductor layer structure; and removing the transfer substrate to form a working surface of the active semiconductor layer structure in the working semiconductor wafer structure, and wherein the working substrate comprises polycrystalline diamond and the step of attaching the working substrate to the active semiconductor layer structure comprises depositing polycrystalline diamond over the active semiconductor layer structure using a chemical vapour deposition, CVD, technique after removing the one or more single crystal strain-matching layers of the native semiconductor.