A flexible organic light emitting diode display comprising: a flexible plate including a display area and a non-display area surrounding the display area; a first buffer layer on a light shielding layer on the flexible plate for physically and electrically isolating the light shielding layer from other conductive layers; wherein on the first buffer layer a storage electrode is formed, and the storage electrode is disposed as overlapping with the light shielding layer; a second buffer layer on the first buffer layer; a switching thin film transistor on the second buffer layer in the display area, comprising a switching gate electrode, a switching source electrode and a switching drain electrode; a driving thin film transistor on the second buffer layer in the display area, comprising a driving gate electrode, a driving source electrode and a driving drain electrode; wherein the light shielding layer including an opaque metal material is selectively formed under the switching transistor and driving transistor wherein the light shielding layer is used for forming an additional storage capacitance together with the storage electrode; an organic light emitting diode (OLED) over the second buffer layer in the display area; the switching thin film transistor and the driving thin film transistor being configured to drive the organic light emitting diode (OLED); a first line disposed in the non-display area on the flexible plate covered by the first buffer layer; wherein the opaque material included in the light shielding layer is also used for the first line linking to a connecting electrode; a second line on the first buffer layer in the non-display area covered by the second buffer layer; a gate line, the switching gate electrode, the driving gate electrode and a gate pad disposed on the second buffer layer, the gate pad disposed in the non-display area at one end of the gate line, and the gate line connecting the gate pad to the switching gate electrode; an intermediate insulating layer covering the gate line, the switching gate electrode and the driving gate electrode; a data line, the switching source electrode, the switching drain electrode, a data pad and the connecting electrode disposed on the intermediate insulating layer, the data pad disposed in the non-display area at one end of the data line, the data line connecting the data pad to the switching source electrode, and the connecting electrode connecting the first line to the second line via a contact hole in the intermediate insulating layer; and a plurality of trenches disposed at an edge bending area of the non-display area between the display area and the gate and data pads (GP, DP), and penetrating the intermediate insulating layer, the second buffer layer and the first buffer layer, so as to facilitate bending of the flexible plate in the edge bending area. a flexible plate including a display area and a non-display area surrounding the display area; a first buffer layer on a light shielding layer on the flexible plate for physically and electrically isolating the light shielding layer from other conductive layers; wherein on the first buffer layer a storage electrode is formed, and the storage electrode is disposed as overlapping with the light shielding layer; a second buffer layer on the first buffer layer; a switching thin film transistor on the second buffer layer in the display area, comprising a switching gate electrode, a switching source electrode and a switching drain electrode; a driving thin film transistor on the second buffer layer in the display area, comprising a driving gate electrode, a driving source electrode and a driving drain electrode; wherein the light shielding layer including an opaque metal material is selectively formed under the switching transistor and driving transistor wherein the light shielding layer is used for forming an additional storage capacitance together with the storage electrode; an organic light emitting diode (OLED) over the second buffer layer in the display area; the switching thin film transistor and the driving thin film transistor being configured to drive the organic light emitting diode (OLED); a first line disposed in the non-display area on the flexible plate covered by the first buffer layer; wherein the opaque material included in the light shielding layer is also used for the first line linking to a connecting electrode; a second line on the first buffer layer in the non-display area covered by the second buffer layer; a gate line, the switching gate electrode, the driving gate electrode and a gate pad disposed on the second buffer layer, the gate pad disposed in the non-display area at one end of the gate line, and the gate line connecting the gate pad to the switching gate electrode; an intermediate insulating layer covering the gate line, the switching gate electrode and the driving gate electrode; a data line, the switching source electrode, the switching drain electrode, a data pad and the connecting electrode disposed on the intermediate insulating layer, the data pad disposed in the non-display area at one end of the data line, the data line connecting the data pad to the switching source electrode, and the connecting electrode connecting the first line to the second line via a contact hole in the intermediate insulating layer; and a plurality of trenches disposed at an edge bending area of the non-display area between the display area and the gate and data pads (GP, DP), and penetrating the intermediate insulating layer, the second buffer layer and the first buffer layer, so as to facilitate bending of the flexible plate in the edge bending area.