A flat panel imaging system comprising: a housing including a base portion and a lid that collectively form a closed environment to exclude external sources of light from entering the housing; and a flat panel detector encased in the base portion, the flat panel detector comprising: an array of pixels each including a photodiode and transistor, the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels, the system being characterised in that: the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample, when placed on the protective layer, and the amorphous silicon panel. a housing including a base portion and a lid that collectively form a closed environment to exclude external sources of light from entering the housing; and a flat panel detector encased in the base portion, the flat panel detector comprising: an array of pixels each including a photodiode and transistor, the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels, the system being characterised in that: the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample, when placed on the protective layer, and the amorphous silicon panel. an array of pixels each including a photodiode and transistor, the photodiode and transistor of each pixel being configured to convert photons received thereby to electrical signals that are representative of the photons impacting individual of the respective pixels; a transparent protective layer positioned over the array of pixels to provide protection thereto and provide for transmission of photons there through to the array of pixels, the system being characterised in that: the protective layer comprises a base layer and a removable top layer, the removable top layer comprising a replaceable layer that may be replaced upon completion of an image acquisition of a gel sample or a blot sample; and wherein: the transistors include an active layer formed from an amorphous silicon panel with the protective layer further providing thermal isolation between the gel sample or blot sample, when placed on the protective layer, and the amorphous silicon panel.