mhurhangee/ep-ind-claims huggingface dataset:
An absorbent article comprising: a topsheet; a backsheet film; an absorbent core positioned at least partially intermediate the topsheet and the backsheet film; the topsheet comprising a nonwoven fabric, the nonwoven fabric comprising a wearer-facing surface; first and second visually discernible zones (110, 120) on the wearer-facing surface; each of the first and second visually discernible zones having a pattern of three-dimensional features; each of the three-dimensional features defining a microzone comprising a first region and a second region; the first and second regions having a difference in values for an intensive property, the intensive property being thickness, basis weight and/or volumetric density; the difference in values for an intensive property for at least one of the microzones in the first zone is different from the difference in values for the intensive property for at least one of the microzones in the second zone; wherein a portion of the wearer-facing surface has a total region one, lower basis weight, area of about 5% to about 25% of a total area of the portion of the wearer-facing surface, with the remainder of the portion of the wearer-facing surface being a total region two, high basis weight, area, the portion having a TS7 value in the range of about 1 dB V 2 rms to about 4.5 dB V 2 rms, according to the Emtec Test; and wherein the portion of the wearer-facing surface has a TS750 value in the range of about 6 dB V 2 rms to about 30 dB V 2 rms, according to the Emtec Test. a topsheet; a backsheet film; an absorbent core positioned at least partially intermediate the topsheet and the backsheet film; the topsheet comprising a nonwoven fabric, the nonwoven fabric comprising a wearer-facing surface; first and second visually discernible zones (110, 120) on the wearer-facing surface; each of the first and second visually discernible zones having a pattern of three-dimensional features; each of the three-dimensional features defining a microzone comprising a first region and a second region; the first and second regions having a difference in values for an intensive property, the intensive property being thickness, basis weight and/or volumetric density; the difference in values for an intensive property for at least one of the microzones in the first zone is different from the difference in values for the intensive property for at least one of the microzones in the second zone; wherein a portion of the wearer-facing surface has a total region one, lower basis weight, area of about 5% to about 25% of a total area of the portion of the wearer-facing surface, with the remainder of the portion of the wearer-facing surface being a total region two, high basis weight, area, the portion having a TS7 value in the range of about 1 dB V 2 rms to about 4.5 dB V 2 rms, according to the Emtec Test; and wherein the portion of the wearer-facing surface has a TS750 value in the range of about 6 dB V 2 rms to about 30 dB V 2 rms, according to the Emtec Test.
A lithographic tool comprising an apparatus for cleaning an object, the apparatus comprising: an object support for supporting the object; a low pressure chamber for exposing a first surface of the object to a low pressure when the object is arranged on the object support, an electrode (23a,23b) arranged adjacent to and separated from the first surface of the object when the object is arranged on the object support, the electrode (23a,23b) being in electrical communication with a surface of the object support which is adjacent the first surface of the object; and a power supply (24a,24b) arranged to apply a voltage between the electrode (23a,23b) and the object; thereby generating a discharge between the object and the electrode (23a,23b), wherein the electrode (23a,23b) is provided with a resistive layer (26a,26b) on the surface of the object support which is adjacent the first surface of the object. an object support for supporting the object; a low pressure chamber for exposing a first surface of the object to a low pressure when the object is arranged on the object support, an electrode (23a,23b) arranged adjacent to and separated from the first surface of the object when the object is arranged on the object support, the electrode (23a,23b) being in electrical communication with a surface of the object support which is adjacent the first surface of the object; and a power supply (24a,24b) arranged to apply a voltage between the electrode (23a,23b) and the object; thereby generating a discharge between the object and the electrode (23a,23b), wherein the electrode (23a,23b) is provided with a resistive layer (26a,26b) on the surface of the object support which is adjacent the first surface of the object.
A method of manufacturing a magnetic encoder device, which comprises: a rotary member having a mounting surface for mounting the rotary member to a rotary shaft; and a magnetic encoder track formed on the rotary member, the magnetic encoder track comprising a plurality of magnetic poles (31a, 32a) arranged in a circumferential direction of the rotary member, each of the plurality of magnetic poles (31a, 32a) of the magnetic encoder track being moved in a region opposed to a magnetic sensor to detect an angle of the rotating rotary shaft, wherein: a region including the mounting surface of the rotary member is formed of a sintered metal; characterized in that at least the mounting surface is subjected to sizing, and in that the method comprises: providing the rotary member with a surface to be positioned at time of formation of the magnetic encoder track through magnetization; forming a region including the surface to be positioned from a sintered metal; and subjecting the surface to be positioned to the sizing. a rotary member having a mounting surface for mounting the rotary member to a rotary shaft; and a magnetic encoder track formed on the rotary member, the magnetic encoder track comprising a plurality of magnetic poles (31a, 32a) arranged in a circumferential direction of the rotary member, each of the plurality of magnetic poles (31a, 32a) of the magnetic encoder track being moved in a region opposed to a magnetic sensor to detect an angle of the rotating rotary shaft, wherein: a region including the mounting surface of the rotary member is formed of a sintered metal; characterized in that at least the mounting surface is subjected to sizing, and in that the method comprises: providing the rotary member with a surface to be positioned at time of formation of the magnetic encoder track through magnetization; forming a region including the surface to be positioned from a sintered metal; and subjecting the surface to be positioned to the sizing. a region including the mounting surface of the rotary member is formed of a sintered metal; characterized in that at least the mounting surface is subjected to sizing, and in that the method comprises: providing the rotary member with a surface to be positioned at time of formation of the magnetic encoder track through magnetization; forming a region including the surface to be positioned from a sintered metal; and subjecting the surface to be positioned to the sizing. providing the rotary member with a surface to be positioned at time of formation of the magnetic encoder track through magnetization; forming a region including the surface to be positioned from a sintered metal; and subjecting the surface to be positioned to the sizing.
An input torque measuring device for a drive train of a bicycle, the drive train including a first crank arm and a second crank arm configured to be engaged by a rider of the bicycle at an outboard end, an inboard end of each crank arm rotatably mounted to the bicycle at a bottom bracket of the bicycle for rotating about an axis of rotation, at least one chain ring mechanically connected to the crank arms and configured to rotate a driven wheel of the bicycle, the device comprising: at least one (200; 400) of the crank arms including a strain gage arrangement comprising a first strain gage arranged on a first surface of the crank arm and a second strain gage arranged on a second surface of the crank arm opposite to the first surface and configured to generate an electronic signal when a force is applied to the crank arm, the electronic signal relative to the force applied to the crank arm; circuitry configured to receive the electronic signal from said strain gages; characterized in that a thinned web section is defined in said crank arm (200; 400), wherein said first surface and said second surface are opposite surfaces of said thinned web section and said strain gages, for allowing the torque about the axis of rotation to be measured, are arranged on said first and second surfaces and are configured to measure shear strain created by the load applied to the crank arm. at least one (200; 400) of the crank arms including a strain gage arrangement comprising a first strain gage arranged on a first surface of the crank arm and a second strain gage arranged on a second surface of the crank arm opposite to the first surface and configured to generate an electronic signal when a force is applied to the crank arm, the electronic signal relative to the force applied to the crank arm; circuitry configured to receive the electronic signal from said strain gages; characterized in that a thinned web section is defined in said crank arm (200; 400), wherein said first surface and said second surface are opposite surfaces of said thinned web section and said strain gages, for allowing the torque about the axis of rotation to be measured, are arranged on said first and second surfaces and are configured to measure shear strain created by the load applied to the crank arm.
A semiconductor device comprising: a semiconductor substrate including an AlGaN layer (6, 56) on a GaN layer (4, 54); a first contact (12, 66), and a second contact (14,64), wherein at least part of an upper surface of the AlGaN layer between the first contact and the second contact includes a plurality of grooves (30, 50) arranged in a grid for varying an average thickness of the AlGaN layer to modulate the density of an electron gas in the GaN layer between the first contact and the second contact, the plurality of grooves comprising a first set of grooves arranged in a direction parallel to the contacts and a second set of grooves arranged perpendicularly to the grooves of the first set in a direction from the first contact to the second contact a semiconductor substrate including an AlGaN layer (6, 56) on a GaN layer (4, 54); a first contact (12, 66), and a second contact (14,64), wherein at least part of an upper surface of the AlGaN layer between the first contact and the second contact includes a plurality of grooves (30, 50) arranged in a grid for varying an average thickness of the AlGaN layer to modulate the density of an electron gas in the GaN layer between the first contact and the second contact, the plurality of grooves comprising a first set of grooves arranged in a direction parallel to the contacts and a second set of grooves arranged perpendicularly to the grooves of the first set in a direction from the first contact to the second contact
A normal-line detection device comprising: four or more distance measurement means for measuring a distance to a processing surface of a work piece, in which the distance measurement means is arranged on the periphery of a processing machine on a plane orthogonal to an axis line of a processing shaft of the processing machine and a measurement axis of each distance measurement means and the axis line of the processing shaft intersect each other; and calculation means for calculating an approximation surface of the processing surface based on a measurement value (ΔL) measured by each distance measurement means and an angle of each distance measurement means with respect to the axis line of the processing shaft and obtaining a normal-line of the approximation surface as a normal-line of the processing surface, wherein the calculation means is configured to determine the measurement value (ΔL), in which a distance between the approximation surface and the distance measurement means is deviated from a predetermined range, measured by the distance measurement means, as the measurement value which is not suitable for calculation of the approximation surface, and wherein the calculation means is configured to remove the measurement value (ΔL) which is not suitable for the calculation of the approximation surface and to obtain the approximation surface again. four or more distance measurement means for measuring a distance to a processing surface of a work piece, in which the distance measurement means is arranged on the periphery of a processing machine on a plane orthogonal to an axis line of a processing shaft of the processing machine and a measurement axis of each distance measurement means and the axis line of the processing shaft intersect each other; and calculation means for calculating an approximation surface of the processing surface based on a measurement value (ΔL) measured by each distance measurement means and an angle of each distance measurement means with respect to the axis line of the processing shaft and obtaining a normal-line of the approximation surface as a normal-line of the processing surface, wherein the calculation means is configured to determine the measurement value (ΔL), in which a distance between the approximation surface and the distance measurement means is deviated from a predetermined range, measured by the distance measurement means, as the measurement value which is not suitable for calculation of the approximation surface, and wherein the calculation means is configured to remove the measurement value (ΔL) which is not suitable for the calculation of the approximation surface and to obtain the approximation surface again.
A user equipment configured to perform multicarrier communication over two or more transmission carriers on an uplink between the user equipment and a base station device in a mobile communication system, the user equipment comprising: a control signal reception unit configured to receive a control signal providing instructions to transmit an uplink signal based on the two or more transmission carriers in the uplink; and an uplink signal transmission unit configured to transmit the uplink signal to the base station device on a basis of the control signal, the control signal including at least parameters of transmission bandwidths of the respective two or more transmission carriers, modulation methods of the respective two or more transmission carriers, and transmission frequency intervals among the two or more transmission carriers, wherein the uplink signal transmission unit is configured to set a maximum value of transmission power of the uplink signal to be smaller than a rated power defined by the mobile communication system on a basis of said parameters and a number of transmission antennas or transmitters used for transmission of said uplink signal by selecting from a table a maximum power reduction corresponding to a combination of the transmission bandwidths, the modulation methods, and the transmission frequency intervals, and wherein said table defines a relatively small value for said maximum power reduction for transmission frequency intervals of equal to or less than a transmission frequency interval threshold and a relatively large value for said maximum power reduction for transmission frequency intervals of greater than said transmission frequency interval threshold. a control signal reception unit configured to receive a control signal providing instructions to transmit an uplink signal based on the two or more transmission carriers in the uplink; and an uplink signal transmission unit configured to transmit the uplink signal to the base station device on a basis of the control signal, the control signal including at least parameters of transmission bandwidths of the respective two or more transmission carriers, modulation methods of the respective two or more transmission carriers, and transmission frequency intervals among the two or more transmission carriers, wherein the uplink signal transmission unit is configured to set a maximum value of transmission power of the uplink signal to be smaller than a rated power defined by the mobile communication system on a basis of said parameters and a number of transmission antennas or transmitters used for transmission of said uplink signal by selecting from a table a maximum power reduction corresponding to a combination of the transmission bandwidths, the modulation methods, and the transmission frequency intervals, and wherein said table defines a relatively small value for said maximum power reduction for transmission frequency intervals of equal to or less than a transmission frequency interval threshold and a relatively large value for said maximum power reduction for transmission frequency intervals of greater than said transmission frequency interval threshold.
A high-strength stainless steel seamless pipe for oil country tubular goods, the high-strength stainless steel seamless pipe having a yield strength of 862 MPa or more with a composition that comprises, in mass%, C:0.05% or less, Si: 0.5% or less, Mn: 0.15 to 1.0%, P:0.030% or less, S:0.005% or less, Cr: 14.5 to 17.5%, Ni: 3.0 to 6.0%, Mo: 2.7 to 5.0%, Cu: 0.3 to 4.0%, W:0.1 to 2.5%, V: 0.02 to 0.20%, Al: 0.10% or less, N: 0.15% or less, B: 0.0005 to 0.0100%, optionally at least one selected from Nb: 0.02 to 0.50%, Ti: 0.02 to 0.16%, and Zr: 0.02 to 0.50%, optionally at least one selected from REM: 0.001 to 0.05%, Ca: 0.001 to 0.005%, Sn: 0.05 to 0.20%, and Mg: 0.0002 to 0.01%, optionally at least one selected from Ta: 0.01 to 0.1%, Co: 0.01 to 1.0%, and Sb:0.01 to 1.0%, and the balance Fe and unavoidable impurities, and in which the C, Si, Mn, Cr, Ni, Mo, Cu, and N satisfy the formula below, and the Cu, Mo, W, Cr, and Ni satisfy the formula below, wherein the stainless steel pipe has a structure that contains more than 45% martensite phase as a primary phase, 10 to 45% ferrite phase and 30% or less retained austenite phase as a secondary phase, by volume, and wherein the ferrite grains have a maximum crystal grain size of 500 μm or less as measured in an inspection of a 100-mm 2 continuous region by assuming that grains having a crystal orientation difference of no greater than 15° represent the same grains in electron backscatter diffraction (EBSD): − 5.9 × 7.82 + 27 C − 0.91 Si + 0.21 Mn − 0.9 Cr + Ni − 1.1 Mo + 0.2 Cu + 11 N ≥ 13.0, wherein C, Si, Mn, Cr, Ni, Mo, Cu, and N represent the content of each element in mass%; and Cu + Mo + W + Cr + 2 Ni ≤ 34.5, wherein Cu, Mo, W, Cr, and Ni represent the content of each element in mass%, wherein the microstructure is determined according to the description.
A flight display system for providing location information for a user-selected feature on an active vertical situation display provided on a display unit in a cockpit of an aircraft, the flight display system comprising a controller circuit configured to: receive the user-selected feature from a user interface operationally coupled to the controller circuit, the user-selected feature from among a plurality of features on the active VSD, the plurality of features including terrain features and weather features; cause a reticle to be displayed as an overlay, centered, on the user-selected feature on the active VSD at a current scale of the VSD, responsive to receiving the user-selected feature; indicate a location of the user-selected feature by rendering a first indicator (210, 310) showing a horizontal extension from a center of the reticle to an intersection on a vertical axis of the active VSD, and rendering a second indicator (212, 312) showing a vertical extension from the center of the reticle to an intersection on a horizontal axis of the active VSD; reference map layer data and weather data using the center of the reticle to obtain raw geospatial information for the user-selected feature; convert the raw geospatial information for the user-selected feature to an elevation and a distance consistent with the current scale of the active VSD; position an alphanumeric elevation label indicating the elevation along the first indicator; and position an alphanumeric distance label indicating the distance by the second indicator. receive the user-selected feature from a user interface operationally coupled to the controller circuit, the user-selected feature from among a plurality of features on the active VSD, the plurality of features including terrain features and weather features; cause a reticle to be displayed as an overlay, centered, on the user-selected feature on the active VSD at a current scale of the VSD, responsive to receiving the user-selected feature; indicate a location of the user-selected feature by rendering a first indicator (210, 310) showing a horizontal extension from a center of the reticle to an intersection on a vertical axis of the active VSD, and rendering a second indicator (212, 312) showing a vertical extension from the center of the reticle to an intersection on a horizontal axis of the active VSD; reference map layer data and weather data using the center of the reticle to obtain raw geospatial information for the user-selected feature; convert the raw geospatial information for the user-selected feature to an elevation and a distance consistent with the current scale of the active VSD; position an alphanumeric elevation label indicating the elevation along the first indicator; and position an alphanumeric distance label indicating the distance by the second indicator.
A conjugate compound that comprises: - one metal nanoparticle; and - at least one HA oligomer derivatised through, at least, one chemical bond with at least one linker that comprises an -S- group, whereby the derivatised HA oligomer binds to to the metal nanoparticle, provided that, when the HA oligomer has a number of monomers n, and n > 1,000, and the nanoparticle is a gold nanoparticle with a size of 20 nm, the linker is other than H 2 N-CH 2 -CH 2 -SH. - one metal nanoparticle; and - at least one HA oligomer derivatised through, at least, one chemical bond with at least one linker that comprises an -S- group, whereby the derivatised HA oligomer binds to to the metal nanoparticle, provided that, when the HA oligomer has a number of monomers n, and n > 1,000, and the nanoparticle is a gold nanoparticle with a size of 20 nm, the linker is other than H 2 N-CH 2 -CH 2 -SH.