A light emitting device comprising: a conductive support member; a first light emitting structure on the conductive support member, the first light emitting structure comprising a first conductivity type first semiconductor layer, a first active layer under the first conductivity type first semiconductor layer, and a second conductivity type second semiconductor layer under the first active layer; a second light emitting structure on the conductive support member, the second light emitting structure comprising a first conductivity type third semiconductor layer, a second active layer under the first conductivity type third semiconductor layer, and a second conductivity type fourth semiconductor layer under the second active layer; a channel layer around lower portions of the first and second light emitting structures (10; 20), the channel layer being an etching stopper when an isolation processing is performed with respect to the first and second light emitting structures (10; 20); a first electrode electrically connected to the first conductivity type first semiconductor layer; a second electrode electrically connected to the second conductivity type second semiconductor layer; a third electrode electrically connected to the first conductivity type third semiconductor layer; a fourth electrode electrically connected to the second conductivity type fourth semiconductor layer; a first connection part electrically connected to the first electrode; a second connection part electrically connected to the second and third electrodes (83; 85); and a third connection part electrically connected to the fourth electrode and having one end provided on the channel layer, characterized in that the first connection part is electrically connected to the conductive support member such that an electric power is supplied to the first and second light emitting structures (10; 20) through the conductive support member and the third connection part, and the channel layer surrounds the first active layer, the second active layer, the second conductivity type second semiconductor layer, and the second conductivity type fourth semiconductor layer such that the channel layer insulates the first connection part from the first active layer and from the second conductivity type second semiconductor layer. a conductive support member; a first light emitting structure on the conductive support member, the first light emitting structure comprising a first conductivity type first semiconductor layer, a first active layer under the first conductivity type first semiconductor layer, and a second conductivity type second semiconductor layer under the first active layer; a second light emitting structure on the conductive support member, the second light emitting structure comprising a first conductivity type third semiconductor layer, a second active layer under the first conductivity type third semiconductor layer, and a second conductivity type fourth semiconductor layer under the second active layer; a channel layer around lower portions of the first and second light emitting structures (10; 20), the channel layer being an etching stopper when an isolation processing is performed with respect to the first and second light emitting structures (10; 20); a first electrode electrically connected to the first conductivity type first semiconductor layer; a second electrode electrically connected to the second conductivity type second semiconductor layer; a third electrode electrically connected to the first conductivity type third semiconductor layer; a fourth electrode electrically connected to the second conductivity type fourth semiconductor layer; a first connection part electrically connected to the first electrode; a second connection part electrically connected to the second and third electrodes (83; 85); and a third connection part electrically connected to the fourth electrode and having one end provided on the channel layer, characterized in that the first connection part is electrically connected to the conductive support member such that an electric power is supplied to the first and second light emitting structures (10; 20) through the conductive support member and the third connection part, and the channel layer surrounds the first active layer, the second active layer, the second conductivity type second semiconductor layer, and the second conductivity type fourth semiconductor layer such that the channel layer insulates the first connection part from the first active layer and from the second conductivity type second semiconductor layer.