A method of forming a boron doped silicon nitride, boron doped silicon carbonitride, or boron doped silicon carboxynitride film via an atomic layer deposition process or ALD-like process, the method comprising the steps of: a. providing a substrate in a reactor; b. introducing into the reactor at least one boron-containing precursor represented by the following Formula I and II below: wherein R 1 is selected from a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, Cl, Br, I, and a C 6 to C 10 aryl group; R 2 is selected from hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, Cl, Br, I, and a C 4 to C 10 aryl group; and optionally wherein R 1 and R 2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; c. purging the reactor with a purge gas; d. providing at least one nitrogen-containing source comprising at least one member selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, organoamine, organoamine plasma, nitrogen, nitrogen plasma, nitrogen/hydrogen, nitrogen/helium, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF 3, NF 3 plasma, and mixtures thereof to deposit the film onto the at least one surface; e. purging the reactor with a purge gas; f. introducing into the reactor di-iso-propylaminosilane; g. purging the reactor with a purge gas; h. providing at least one nitrogen-containing source comprising at least one member selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, organoamine, organoamine plasma, nitrogen, nitrogen plasma, nitrogen/hydrogen, nitrogen/helium, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF 3, NF 3 plasma, and mixtures thereof to deposit the film onto the at least one surface; i. purging the reactor with a purge gas; wherein steps b through i are repeated until a desired thickness of the film is obtained. a. providing a substrate in a reactor; b. introducing into the reactor at least one boron-containing precursor represented by the following Formula I and II below: wherein R 1 is selected from a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, Cl, Br, I, and a C 6 to C 10 aryl group; R 2 is selected from hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, Cl, Br, I, and a C 4 to C 10 aryl group; and optionally wherein R 1 and R 2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; c. purging the reactor with a purge gas; d. providing at least one nitrogen-containing source comprising at least one member selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, organoamine, organoamine plasma, nitrogen, nitrogen plasma, nitrogen/hydrogen, nitrogen/helium, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF 3, NF 3 plasma, and mixtures thereof to deposit the film onto the at least one surface; e. purging the reactor with a purge gas; f. introducing into the reactor di-iso-propylaminosilane; g. purging the reactor with a purge gas; h. providing at least one nitrogen-containing source comprising at least one member selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, organoamine, organoamine plasma, nitrogen, nitrogen plasma, nitrogen/hydrogen, nitrogen/helium, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF 3, NF 3 plasma, and mixtures thereof to deposit the film onto the at least one surface; i. purging the reactor with a purge gas; wherein steps b through i are repeated until a desired thickness of the film is obtained.