A method, comprising: arranging on a substrate (12A, 12B) at least one pair of semiconductor dice comprising a first semiconductor die and a second semiconductor die, molding an encapsulation of laser direct structuring, LDS, material onto the first semiconductor die and the second semiconductor die arranged on the substrate (12A, 12B), the encapsulation of LDS material having a surface opposite the substrate (12A, 12B), providing at least one electrically conductive die-to-die coupling formation between the first semiconductor die and the second semiconductor die, the at least one die-to-die coupling formation comprising die vias extending through the LDS material between the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) and the one and the other of the first semiconductor die and the second semiconductor die as well as a die-to-die line extending at the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) and coupling said die vias, wherein providing said at least one electrically conductive die-to-die coupling formation comprises: applying laser beam energy to selected locations of the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) to laser-activate the LDS material and to structure therein said die vias as well as said die-to-die line, electroless growing electrically conductive material onto said die vias as well as onto said die-to-die line structured by laser beam energy in the encapsulation of LDS material, characterised in that laser-induced forward transfer, LIFT processing is applied to transfer electrically conductive material onto the electrically conductive material electroless grown onto said die vias and said die-to-die line. arranging on a substrate (12A, 12B) at least one pair of semiconductor dice comprising a first semiconductor die and a second semiconductor die, molding an encapsulation of laser direct structuring, LDS, material onto the first semiconductor die and the second semiconductor die arranged on the substrate (12A, 12B), the encapsulation of LDS material having a surface opposite the substrate (12A, 12B), providing at least one electrically conductive die-to-die coupling formation between the first semiconductor die and the second semiconductor die, the at least one die-to-die coupling formation comprising die vias extending through the LDS material between the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) and the one and the other of the first semiconductor die and the second semiconductor die as well as a die-to-die line extending at the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) and coupling said die vias, wherein providing said at least one electrically conductive die-to-die coupling formation comprises: applying laser beam energy to selected locations of the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) to laser-activate the LDS material and to structure therein said die vias as well as said die-to-die line, electroless growing electrically conductive material onto said die vias as well as onto said die-to-die line structured by laser beam energy in the encapsulation of LDS material, characterised in that laser-induced forward transfer, LIFT processing is applied to transfer electrically conductive material onto the electrically conductive material electroless grown onto said die vias and said die-to-die line. applying laser beam energy to selected locations of the surface of the encapsulation of LDS material opposite the substrate (12A, 12B) to laser-activate the LDS material and to structure therein said die vias as well as said die-to-die line, electroless growing electrically conductive material onto said die vias as well as onto said die-to-die line structured by laser beam energy in the encapsulation of LDS material, characterised in that laser-induced forward transfer, LIFT processing is applied to transfer electrically conductive material onto the electrically conductive material electroless grown onto said die vias and said die-to-die line.