A method of manufacturing an image pattern for a security device, comprising: (a) providing a metallised substrate comprising a substrate material having a first metal layer thereon on a first surface of the substrate material, the first metal layer being soluble in a first etchant substance (step S101); (b) applying a first photosensitive resist layer to the first metal layer, the first photosensitive resist layer comprising a thermally-activatable cross-linking agent which, is operable to preferentially cross-link functional groups of a selected class, which functional groups are not present in the first photosensitive resist layer upon application to the first metal layer (step S102); (c) exposing the first photosensitive resist layer to radiation of a wavelength to which the resist layer is responsive through a patterned mask, wherein the patterned mask comprises first pattern elements (P 1) in which the mask is substantially opaque to the radiation and second pattern elements (P 2) in which the mask is substantially transparent to the radiation, whereupon the exposed second pattern elements of the first photosensitive resist layer react resulting in increased solubility in a second etchant substance, the non-exposed first pattern elements remaining relatively insoluble by the second etchant substance (step S103); (d) exposing the first photosensitive resist layer to a first reactant substance, the first reactant substance reacting with the exposed second pattern elements of the first photosensitive resist layer to produce at least one functional group of the selected class, the first reactant substance substantially not reacting with the unexposed first pattern elements of the first photosensitive resist layer (step S104): (e) activating the cross-linking agent in the first photosensitive resist layer such that cross-links are formed between the at least one functional group of the selected class in the exposed second pattern elements, whereby the solubility of the exposed second pattern elements of the first photosensitive resist layer in the second etchant substance is decreased (step S105); (f) exposing the first and second pattern elements of the first photosensitive resist layer to radiation of a wavelength to which the resist layer is responsive whereupon the newly-exposed first pattern elements of the first photosensitive resist layer react, resulting in increased solubility by the second etchant substance, the second pattern elements remaining relatively insoluble by the second etchant substance (step S106); and (g) applying the first and second etchant substances to the substrate whereupon the first pattern elements of both the first resist layer and the first metal layer are dissolved, the remaining second pattern elements of the first metal layer forming an image pattern (step S107). (a) providing a metallised substrate comprising a substrate material having a first metal layer thereon on a first surface of the substrate material, the first metal layer being soluble in a first etchant substance (step S101); (b) applying a first photosensitive resist layer to the first metal layer, the first photosensitive resist layer comprising a thermally-activatable cross-linking agent which, is operable to preferentially cross-link functional groups of a selected class, which functional groups are not present in the first photosensitive resist layer upon application to the first metal layer (step S102); (c) exposing the first photosensitive resist layer to radiation of a wavelength to which the resist layer is responsive through a patterned mask, wherein the patterned mask comprises first pattern elements (P 1) in which the mask is substantially opaque to the radiation and second pattern elements (P 2) in which the mask is substantially transparent to the radiation, whereupon the exposed second pattern elements of the first photosensitive resist layer react resulting in increased solubility in a second etchant substance, the non-exposed first pattern elements remaining relatively insoluble by the second etchant substance (step S103); (d) exposing the first photosensitive resist layer to a first reactant substance, the first reactant substance reacting with the exposed second pattern elements of the first photosensitive resist layer to produce at least one functional group of the selected class, the first reactant substance substantially not reacting with the unexposed first pattern elements of the first photosensitive resist layer (step S104): (e) activating the cross-linking agent in the first photosensitive resist layer such that cross-links are formed between the at least one functional group of the selected class in the exposed second pattern elements, whereby the solubility of the exposed second pattern elements of the first photosensitive resist layer in the second etchant substance is decreased (step S105); (f) exposing the first and second pattern elements of the first photosensitive resist layer to radiation of a wavelength to which the resist layer is responsive whereupon the newly-exposed first pattern elements of the first photosensitive resist layer react, resulting in increased solubility by the second etchant substance, the second pattern elements remaining relatively insoluble by the second etchant substance (step S106); and (g) applying the first and second etchant substances to the substrate whereupon the first pattern elements of both the first resist layer and the first metal layer are dissolved, the remaining second pattern elements of the first metal layer forming an image pattern (step S107).