A display, comprising: a substrate, configured to carry components of the display; a driver circuit backplane, comprising a plurality of driver circuit units, wherein the driver circuit backplane is disposed above the substrate; a first pixel layer, comprising a plurality of pixels, wherein each pixel of the first pixel layer comprises a plurality of subpixels, each subpixel of the first pixel layer comprises one organic light-emitting diode OLED component, the first pixel layer is disposed above the driver circuit backplane, and the OLED component of each subpixel of the first pixel layer is connected to at least one driver circuit unit in the driver circuit backplane; and a second pixel layer, comprising a first electrode layer, a second electrode layer, and a plurality of pixels disposed between the first electrode layer and the second electrode layer, wherein each pixel of the second pixel layer comprises a plurality of subpixels, each subpixel of the second pixel layer comprises one micro light-emitting diode micro LED component, the second pixel layer is disposed above the substrate and surrounds the first pixel layer, and an area of the second pixel layer is less than that of the first pixel layer; wherein the micro LED component is a vertical type micro LED component, and the vertical type micro LED component comprises a top electrode and a bottom electrode, wherein the second electrode layer is above the first electrode layer, and the top electrode of the vertical type micro LED component is in contact with the second electrode layer and the bottom electrode is in contact with and bonded to the first electrode layer using a bonding layer made of a solder material; and wherein the vertical type micro LED component comprises a p-n diode that comprises an n-doped layer, a p-doped layer and quantum well layers, wherein the p-doped layer is located above the n-doped layer or the n-doped layer is located above the p-doped layer; and wherein the second pixel layer further comprises a passivation layer, and the passivation layer is disposed between the first electrode layer and the second electrode layer and covers the vertical type micro LED component, and insulates the bottom electrode from the top electrode. a substrate, configured to carry components of the display; a driver circuit backplane, comprising a plurality of driver circuit units, wherein the driver circuit backplane is disposed above the substrate; a first pixel layer, comprising a plurality of pixels, wherein each pixel of the first pixel layer comprises a plurality of subpixels, each subpixel of the first pixel layer comprises one organic light-emitting diode OLED component, the first pixel layer is disposed above the driver circuit backplane, and the OLED component of each subpixel of the first pixel layer is connected to at least one driver circuit unit in the driver circuit backplane; and a second pixel layer, comprising a first electrode layer, a second electrode layer, and a plurality of pixels disposed between the first electrode layer and the second electrode layer, wherein each pixel of the second pixel layer comprises a plurality of subpixels, each subpixel of the second pixel layer comprises one micro light-emitting diode micro LED component, the second pixel layer is disposed above the substrate and surrounds the first pixel layer, and an area of the second pixel layer is less than that of the first pixel layer; wherein the micro LED component is a vertical type micro LED component, and the vertical type micro LED component comprises a top electrode and a bottom electrode, wherein the second electrode layer is above the first electrode layer, and the top electrode of the vertical type micro LED component is in contact with the second electrode layer and the bottom electrode is in contact with and bonded to the first electrode layer using a bonding layer made of a solder material; and wherein the vertical type micro LED component comprises a p-n diode that comprises an n-doped layer, a p-doped layer and quantum well layers, wherein the p-doped layer is located above the n-doped layer or the n-doped layer is located above the p-doped layer; and wherein the second pixel layer further comprises a passivation layer, and the passivation layer is disposed between the first electrode layer and the second electrode layer and covers the vertical type micro LED component, and insulates the bottom electrode from the top electrode.