A semiconductor construction, comprising: a stack over a first electrically conductive material, the stack comprising a second electrically insulative material over a first electrically insulative material; the first and second electrically insulative materials being compositionally different from one another; the first electrically conductive material comprising copper; an electrically conductive plug within the stack and on the first electrically conductive material, the electrically conductive plug having a lateral sidewall directly against both the first and second electrically insulative materials (52, 54); the electrically conductive plug comprising titanium nitride directly against an upper surface of the first electrically conductive material, and comprising tungsten directly against the titanium nitride; the titanium nitride being an upwardly-opening container shape, and the tungsten being within the upwardly-opening container shape; an upper surface of the electrically conductive plug having a region of the titanium nitride laterally surrounding a region of the tungsten; an electrically insulative spacer over and directly against an outer portion of the upper surface of the electrically conductive plug and not directly above an inner portion of the upper surface; the outer portion comprising part of the titanium nitride region of the upper surface of the electrically conductive plug, and the inner portion comprising part of the titanium nitride region of the upper surface of the electrically conductive plug and the tungsten region of the upper surface of the electrically conductive plug; the electrically insulative spacer having an outer lateral surface directly against the second electrically insulative material of the stack and not directly against the first electrically insulative material of the stack; a second electrically conductive material over and directly against the inner portion of the upper surface of the electrically conductive plug; the second electrically conductive material being directly against an inner lateral surface of the spacer; the second electrically conductive material directly contacting both the titanium nitride and the tungsten regions of the upper surface of the electrically conductive plug; the second electrically conductive material extending along an upper surface of the stack and forming a lower part of an electrically conductive line; and a third electrically conductive material directly over and along the second electrically conductive material and forming an upper part of the conductive line, the second and third electrically conductive materials (74, 76) being compositionally different from one another. a stack over a first electrically conductive material, the stack comprising a second electrically insulative material over a first electrically insulative material; the first and second electrically insulative materials being compositionally different from one another; the first electrically conductive material comprising copper; an electrically conductive plug within the stack and on the first electrically conductive material, the electrically conductive plug having a lateral sidewall directly against both the first and second electrically insulative materials (52, 54); the electrically conductive plug comprising titanium nitride directly against an upper surface of the first electrically conductive material, and comprising tungsten directly against the titanium nitride; the titanium nitride being an upwardly-opening container shape, and the tungsten being within the upwardly-opening container shape; an upper surface of the electrically conductive plug having a region of the titanium nitride laterally surrounding a region of the tungsten; an electrically insulative spacer over and directly against an outer portion of the upper surface of the electrically conductive plug and not directly above an inner portion of the upper surface; the outer portion comprising part of the titanium nitride region of the upper surface of the electrically conductive plug, and the inner portion comprising part of the titanium nitride region of the upper surface of the electrically conductive plug and the tungsten region of the upper surface of the electrically conductive plug; the electrically insulative spacer having an outer lateral surface directly against the second electrically insulative material of the stack and not directly against the first electrically insulative material of the stack; a second electrically conductive material over and directly against the inner portion of the upper surface of the electrically conductive plug; the second electrically conductive material being directly against an inner lateral surface of the spacer; the second electrically conductive material directly contacting both the titanium nitride and the tungsten regions of the upper surface of the electrically conductive plug; the second electrically conductive material extending along an upper surface of the stack and forming a lower part of an electrically conductive line; and a third electrically conductive material directly over and along the second electrically conductive material and forming an upper part of the conductive line, the second and third electrically conductive materials (74, 76) being compositionally different from one another.