A method for producing an electronic module assembly, the method comprising: curing a curable first mass extending between a substrate assembly and a lid of a module housing while a circuit carrier of the substrate assembly is at a temperature of at least a first temperature, wherein the circuit carrier comprises a dielectric insulation carrier and a first substrate metallization layer attached to the dielectric insulation carrier, and wherein the substrate assembly further comprises at least one semiconductor chip joined with the first substrate metallization layer; forming an adhesive connection between a side wall (51,52,53,54) of the module housing and the circuit carrier by curing a curable second mass; cooling down the circuit carrier to below a second temperature lower than the first temperature subsequent to curing the curable first mass; wherein the cured first mass is located distant from the edges of the circuit carrier and opposite a heat exchange surface of the circuit carrier, the circuit carrier is heated from an initial state to a heated state in which the temperature of the circuit carrier is at the temperature of at least the first temperature, the circuit carrier bending due to the temperature rise, the curable first mass is cured when the circuit carrier is in the bent state, the curable first mass extending between the module housing and the substrate assembly and bridging a gap between the module housing and the substrate assembly which increases when the circuit carrier bends due to the temperature rise, and the cured first mass fixing said gap so that the circuit carrier remains in the bent state after cooling down. curing a curable first mass extending between a substrate assembly and a lid of a module housing while a circuit carrier of the substrate assembly is at a temperature of at least a first temperature, wherein the circuit carrier comprises a dielectric insulation carrier and a first substrate metallization layer attached to the dielectric insulation carrier, and wherein the substrate assembly further comprises at least one semiconductor chip joined with the first substrate metallization layer; forming an adhesive connection between a side wall (51,52,53,54) of the module housing and the circuit carrier by curing a curable second mass; cooling down the circuit carrier to below a second temperature lower than the first temperature subsequent to curing the curable first mass; wherein the cured first mass is located distant from the edges of the circuit carrier and opposite a heat exchange surface of the circuit carrier, the circuit carrier is heated from an initial state to a heated state in which the temperature of the circuit carrier is at the temperature of at least the first temperature, the circuit carrier bending due to the temperature rise, the curable first mass is cured when the circuit carrier is in the bent state, the curable first mass extending between the module housing and the substrate assembly and bridging a gap between the module housing and the substrate assembly which increases when the circuit carrier bends due to the temperature rise, and the cured first mass is located distant from the edges of the circuit carrier and opposite a heat exchange surface of the circuit carrier, the circuit carrier is heated from an initial state to a heated state in which the temperature of the circuit carrier is at the temperature of at least the first temperature, the circuit carrier bending due to the temperature rise, the curable first mass is cured when the circuit carrier is in the bent state, the curable first mass extending between the module housing and the substrate assembly and bridging a gap between the module housing and the substrate assembly which increases when the circuit carrier bends due to the temperature rise, and the cured first mass fixing said gap so that the circuit carrier remains in the bent state after cooling down.