A solid-state imaging apparatus comprising: a pixel unit including a matrix of pixels for converting light to an electric signal; a driving unit for driving the pixel unit, and a control circuit for sending control signals to the driving unit to control operation; wherein each of the pixels includes a photoelectric conversion film for carrying out photoelectric conversion, the photoelectric conversion film being provided on a semiconductor substrate; an accumulation unit for accumulating, during an exposure period, the charge generated at the photoelectric conversion film, the accumulation unit being disposed in the semiconductor substrate, an injection unit that is connected to the accumulation unit via a barrier unit, wherein the injection unit and the barrier unit are disposed in the semiconductor substrate, for injecting a charge generated at the photoelectric conversion film to the accumulation unit via the barrier unit for providing an electric potential barrier between the photoelectric conversion film and the accumulation unit, and a transfer transistor configured to transfer the charge accumulated in the accumulation unit to a floating diffusion, characterised in that the solid-state imaging apparatus further comprises a reset transistor being connected to both the accumulation unit via the transfer transistor and an electric potential line (LALL) and for resetting the charge in the accumulation unit; wherein the control circuit is configured to send control signals to the driving unit to control the pixel unit to selectively inject charge to the injection unit of the pixel before the beginning of the exposure period, wherein for said selective injection of charge the driving unit is configured to inject a charge from the electric potential line (LALL) via the reset transistor, the floating diffusion, the transfer transistor, the accumulation unit and the barrier unit to the injection unit, and wherein the driving unit is configured to reset the charge in the accumulation unit after injecting a charge into the injection unit. a pixel unit including a matrix of pixels for converting light to an electric signal; a driving unit for driving the pixel unit, and a control circuit for sending control signals to the driving unit to control operation; wherein each of the pixels includes a photoelectric conversion film for carrying out photoelectric conversion, the photoelectric conversion film being provided on a semiconductor substrate; an accumulation unit for accumulating, during an exposure period, the charge generated at the photoelectric conversion film, the accumulation unit being disposed in the semiconductor substrate, an injection unit that is connected to the accumulation unit via a barrier unit, wherein the injection unit and the barrier unit are disposed in the semiconductor substrate, for injecting a charge generated at the photoelectric conversion film to the accumulation unit via the barrier unit for providing an electric potential barrier between the photoelectric conversion film and the accumulation unit, and a transfer transistor configured to transfer the charge accumulated in the accumulation unit to a floating diffusion, characterised in that the solid-state imaging apparatus further comprises a photoelectric conversion film for carrying out photoelectric conversion, the photoelectric conversion film being provided on a semiconductor substrate; an accumulation unit for accumulating, during an exposure period, the charge generated at the photoelectric conversion film, the accumulation unit being disposed in the semiconductor substrate, an injection unit that is connected to the accumulation unit via a barrier unit, wherein the injection unit and the barrier unit are disposed in the semiconductor substrate, for injecting a charge generated at the photoelectric conversion film to the accumulation unit via the barrier unit for providing an electric potential barrier between the photoelectric conversion film and the accumulation unit, and a transfer transistor configured to transfer the charge accumulated in the accumulation unit to a floating diffusion, characterised in that the solid-state imaging apparatus further comprises a reset transistor being connected to both the accumulation unit via the transfer transistor and an electric potential line (LALL) and for resetting the charge in the accumulation unit; wherein the control circuit is configured to send control signals to the driving unit to control the pixel unit to selectively inject charge to the injection unit of the pixel before the beginning of the exposure period, wherein for said selective injection of charge the driving unit is configured to inject a charge from the electric potential line (LALL) via the reset transistor, the floating diffusion, the transfer transistor, the accumulation unit and the barrier unit to the injection unit, and wherein the driving unit is configured to reset the charge in the accumulation unit after injecting a charge into the injection unit.