A cleaning method of cleaning a film-forming device, which includes a processing container having a substrate holder provided in the processing container so as to hold a substrate to be processed, and which supplies a SiH 4 and a C 3 H 8 gas as a source gas to the processing container, an interior of which is depressurized, and heats the substrate to be processed so as to perform a film formation on the substrate to be processed, the cleaning method comprising: a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the substrate to be processed, by supplying a fluorine-based cleaning gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container; characterized by an additional removal process of removing a substance, which remains after the reaction product removal process and is not removed by the residue removal process, by supplying hydrogen gas into the processing container; and subsequently to the additional removal process, a protective film formation process of forming an SiC protective film on a surface of the substrate holder by supplying the source gas to the processing container, wherein in the reaction product removal process, the substrate holder is selectively heated by induction heating by a coil connected to a high-frequency power supply provided outside the processing container, wherein in the additional removal process, a temperature of the substrate holder is set to be 1,500 degrees C or higher, and wherein in the protective film formation process, a temperature of the substrate holder is set to be 1,600 degrees C to 1,700 degrees C. a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the substrate to be processed, by supplying a fluorine-based cleaning gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container; characterized by an additional removal process of removing a substance, which remains after the reaction product removal process and is not removed by the residue removal process, by supplying hydrogen gas into the processing container; and subsequently to the additional removal process, a protective film formation process of forming an SiC protective film on a surface of the substrate holder by supplying the source gas to the processing container, wherein in the reaction product removal process, the substrate holder is selectively heated by induction heating by a coil connected to a high-frequency power supply provided outside the processing container, wherein in the additional removal process, a temperature of the substrate holder is set to be 1,500 degrees C or higher, and wherein in the protective film formation process, a temperature of the substrate holder is set to be 1,600 degrees C to 1,700 degrees C.