A method for manufacturing a power semiconductor device, the method comprising the following steps: providing a wafer of a first conductivity type, the wafer having a first main side and a second main side opposite to the first main side, and the wafer including an active cell area, which extends from the first main side to the second main side, in a central part of the wafer and a termination area surrounding the active cell area in an orthogonal projection onto a plane parallel to the first main side; forming a metallization layer (46; 86) on the first main side to electrically contact the wafer in the active cell area, wherein the surface of the metallization layer (46; 86), which faces away from the wafer, defines a first plane (B; B') parallel to the first main side; forming an isolation layer on the first main side to cover the termination area, wherein the surface of the isolation layer facing away from the wafer defines a second plane parallel to the first main side; after the step of forming the metallization layer (46; 86) and after the step of forming the isolation layer, mounting the wafer with its first main side to a flat surface of a chuck; and thereafter thinning the wafer from its second main side by grinding while pressing the second main side of the wafer onto a grinding wheel by applying a pressure between the chuck and the grinding wheel, wherein the second plane is at most 1 μm further away from the wafer than the first plane (B; B'), and wherein the step of forming the metallization layer (46; 86) comprises: a first step of forming a lower portion (46a; 86a) of the metallization layer (46; 86) on the first main side in the active cell area before the step of forming the isolation layer; and a second step of forming an upper portion (46b; 86b) of the metallization layer (46; 86) on the lower portion (46a; 86a) of the metallization layer (46; 86) in the active cell area after the step of forming the isolation layer. providing a wafer of a first conductivity type, the wafer having a first main side and a second main side opposite to the first main side, and the wafer including an active cell area, which extends from the first main side to the second main side, in a central part of the wafer and a termination area surrounding the active cell area in an orthogonal projection onto a plane parallel to the first main side; forming a metallization layer (46; 86) on the first main side to electrically contact the wafer in the active cell area, wherein the surface of the metallization layer (46; 86), which faces away from the wafer, defines a first plane (B; B') parallel to the first main side; forming an isolation layer on the first main side to cover the termination area, wherein the surface of the isolation layer facing away from the wafer defines a second plane parallel to the first main side; after the step of forming the metallization layer (46; 86) and after the step of forming the isolation layer, mounting the wafer with its first main side to a flat surface of a chuck; and thereafter thinning the wafer from its second main side by grinding while pressing the second main side of the wafer onto a grinding wheel by applying a pressure between the chuck and the grinding wheel, wherein the second plane is at most 1 μm further away from the wafer than the first plane (B; B'), and wherein the step of forming the metallization layer (46; 86) comprises: a first step of forming a lower portion (46a; 86a) of the metallization layer (46; 86) on the first main side in the active cell area before the step of forming the isolation layer; and a second step of forming an upper portion (46b; 86b) of the metallization layer (46; 86) on the lower portion (46a; 86a) of the metallization layer (46; 86) in the active cell area after the step of forming the isolation layer. a first step of forming a lower portion (46a; 86a) of the metallization layer (46; 86) on the first main side in the active cell area before the step of forming the isolation layer; and a second step of forming an upper portion (46b; 86b) of the metallization layer (46; 86) on the lower portion (46a; 86a) of the metallization layer (46; 86) in the active cell area after the step of forming the isolation layer.