A semiconductor light emitting device comprising: an at least partially transparent substrate comprising a first surface and a second surface; an active semiconductor structure comprising a first surface, a second surface and at least one sidewall, the first surface of the active semiconductor structure facing the second surface of the substrate, the at least one sidewall of the active semiconductor structure being tapered inwardly from the first surface of the active semiconductor structure to the second surface of the active semiconductor structure, the active semiconductor structure comprising an active region in a first portion of the at least one sidewall of the active semiconductor structure, proximate the second surface of the active semiconductor structure; a dielectric layer surrounding at least a portion of the at least one sidewall of the active semiconductor structure; and a metal layer surrounding at least a portion of the dielectric layer; wherein the at least one sidewall of the active semiconductor structure is tapered; and wherein the first portion of the at least one sidewall of the active semiconductor structure has a different tapering than a second portion of the at least one sidewall of the active semiconductor structure, the first portion of the at least one sidewall of the active semiconductor structure extending from the active region to the second surface of the active semiconductor structure, the second portion of the at least one sidewall of the active semiconductor structure extending from the active region towards the first surface of the active semiconductor structure. an at least partially transparent substrate comprising a first surface and a second surface; an active semiconductor structure comprising a first surface, a second surface and at least one sidewall, the first surface of the active semiconductor structure facing the second surface of the substrate, the at least one sidewall of the active semiconductor structure being tapered inwardly from the first surface of the active semiconductor structure to the second surface of the active semiconductor structure, the active semiconductor structure comprising an active region in a first portion of the at least one sidewall of the active semiconductor structure, proximate the second surface of the active semiconductor structure; a dielectric layer surrounding at least a portion of the at least one sidewall of the active semiconductor structure; and a metal layer surrounding at least a portion of the dielectric layer; wherein the at least one sidewall of the active semiconductor structure is tapered; and wherein the first portion of the at least one sidewall of the active semiconductor structure has a different tapering than a second portion of the at least one sidewall of the active semiconductor structure, the first portion of the at least one sidewall of the active semiconductor structure extending from the active region to the second surface of the active semiconductor structure, the second portion of the at least one sidewall of the active semiconductor structure extending from the active region towards the first surface of the active semiconductor structure.