An ultraviolet light-emitting device comprising: a support member; a light-emitting structure on the support member; the light-emitting structure comprising a second conductivity type semiconductor layer and a first conductivity type semiconductor layer (112a, 112b) composed of an AIGaN semiconductor, an active layer disposed between the first conductivity type semiconductor layer (112a, 112b) and the second conductivity type semiconductor layer, a plurality of recesses formed in the light-emitting structure that penetrate the second conductivity type semiconductor layer and the active layer and expose a region of the first conductivity type semiconductor layer (112a, 112b); a first electrode is disposed under the light-emitting structure and is electrically connected to the second conductivity type semiconductor layer; and a second electrode is disposed under the first electrode and is electrically connected to the exposed through the recesses region of the first conductivity type semiconductor layer (112a, 112b), the second electrode including the support member; and wherein the first conductivity type semiconductor (112a, 112b) includes a first conductivity type second semiconductor layer, a first conductivity type first semiconductor layer on the a first conductivity type second semiconductor layer; wherein an etching-blocking layer is disposed between the first conductivity type first semiconductor layer and the first conductivity type second semiconductor layer, wherein an electron spreading layer is disposed between the etching-blocking layer and the first conductivity type second semiconductor layer, and wherein the electron spreading layer includes a first conductivity AIGaN based fourth semiconductor layer disposed between the etching-blocking layer and an undoped AlN layer, the undoped AlN layer is disposed between the first conductivity AIGaN based fourth semiconductor layer and a first conductivity AIGaN based fifth semiconductor layer, the first conductivity AIGaN based fifth semiconductor layer is disposed between the undoped AIN layer and an undoped AIGaN based semiconductor layer, and wherein an insulating layer is disposed below the first electrode, wherein the insulating layer insulates the first electrode and the second electrode from each other. a support member; a light-emitting structure on the support member; the light-emitting structure comprising a second conductivity type semiconductor layer and a first conductivity type semiconductor layer (112a, 112b) composed of an AIGaN semiconductor, an active layer disposed between the first conductivity type semiconductor layer (112a, 112b) and the second conductivity type semiconductor layer, a plurality of recesses formed in the light-emitting structure that penetrate the second conductivity type semiconductor layer and the active layer and expose a region of the first conductivity type semiconductor layer (112a, 112b); a first electrode is disposed under the light-emitting structure and is electrically connected to the second conductivity type semiconductor layer; and a second electrode is disposed under the first electrode and is electrically connected to the exposed through the recesses region of the first conductivity type semiconductor layer (112a, 112b), the second electrode including the support member; and wherein the first conductivity type semiconductor (112a, 112b) includes a first conductivity type second semiconductor layer, a first conductivity type first semiconductor layer on the a first conductivity type second semiconductor layer; wherein an etching-blocking layer is disposed between the first conductivity type first semiconductor layer and the first conductivity type second semiconductor layer, wherein an electron spreading layer is disposed between the etching-blocking layer and the first conductivity type second semiconductor layer, and wherein the electron spreading layer includes a first conductivity AIGaN based fourth semiconductor layer disposed between the etching-blocking layer and an undoped AlN layer, the undoped AlN layer is disposed between the first conductivity AIGaN based fourth semiconductor layer and a first conductivity AIGaN based fifth semiconductor layer, the first conductivity AIGaN based fifth semiconductor layer is disposed between the undoped AIN layer and an undoped AIGaN based semiconductor layer, and wherein an insulating layer is disposed below the first electrode, wherein the insulating layer insulates the first electrode and the second electrode from each other.