A magnetic memory device (300, 400), comprising: tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked; a conductive line structure (304, 305) connected to the unit cells and configured to supply an in-plane current to the unit cells; and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells, wherein each of the tunnel junction unit cells has a magnetization direction that is selectively changed by the in-plane current and the selection voltage, characterized in that: the conductive line structure comprises an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, the conductive line structure is configured to induce a horizontal exchange bias field in the free magnetic layer, and the in-plane current flowing through the conductive line structure is configured to produce a spin-orbit spin torque, the antiferromagnetic layer is antiferromagnetically aligned in an in-plane direction due to the ferromagnetic layer being in surface contact therewith, the free magnetic layer has a perpendicular magnetic anisotropy, the in-plane current is provided from a current supply connected to an end portion of the conductive line structure and flowing through both the antiferromagnetic layer and the ferromagnetic layer of said conductive line structure. tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked; a conductive line structure (304, 305) connected to the unit cells and configured to supply an in-plane current to the unit cells; and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells, wherein each of the tunnel junction unit cells has a magnetization direction that is selectively changed by the in-plane current and the selection voltage, characterized in that: the conductive line structure comprises an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, the conductive line structure is configured to induce a horizontal exchange bias field in the free magnetic layer, and the in-plane current flowing through the conductive line structure is configured to produce a spin-orbit spin torque, the antiferromagnetic layer is antiferromagnetically aligned in an in-plane direction due to the ferromagnetic layer being in surface contact therewith, the free magnetic layer has a perpendicular magnetic anisotropy, the in-plane current is provided from a current supply connected to an end portion of the conductive line structure and flowing through both the antiferromagnetic layer and the ferromagnetic layer of said conductive line structure. the conductive line structure comprises an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, the conductive line structure is configured to induce a horizontal exchange bias field in the free magnetic layer, and the in-plane current flowing through the conductive line structure is configured to produce a spin-orbit spin torque, the antiferromagnetic layer is antiferromagnetically aligned in an in-plane direction due to the ferromagnetic layer being in surface contact therewith, the free magnetic layer has a perpendicular magnetic anisotropy, the in-plane current is provided from a current supply connected to an end portion of the conductive line structure and flowing through both the antiferromagnetic layer and the ferromagnetic layer of said conductive line structure.