Method for changing a switching state of a switching half-bridge, which has a first and a second field-effect transistor (5, 7), from a first switching state, in which a gate-source voltage (U GS1) of the first field-effect transistor adopts a switch-on level (U on) and a gate-source voltage (U Gs2) of the second field-effect transistor adopts a first switch-off level (U off1), to a second switching state, in which the gate-source voltage (U GS1) of the first field-effect transistor adopts the first switch-off level (U off1) and the gate-source voltage (U GS2) of the second field-effect transistor adopts the switch-on level (U on), wherein - the gate-source voltage (U GS1) of the first field-effect transistor is firstly changed from the switch-on level (U on) to a second switch-off level (U off2), the magnitude of which is greater than the magnitude of the first switch-off level (U off1), - then the gate-source voltage (U GS2) of the second field-effect transistor is changed from the first switch-off level (U off1) to the switch-on level (U on) - and thereafter the gate-source voltage (U GS1) of the first field-effect transistor is changed from the second switch-off level (U off2) to the first switch-off level (U off1), characterised in that upstream of a gate terminal of the first field-effect transistor is arranged a supplementary circuit with a first and a second circuit branch connected parallel to one another, wherein the first circuit branch has a damping resistor and an inductor connected in series thereto and the second circuit branch has a series resistor and an auxiliary switch and, in the event of a change in a control voltage (U C1) of the first field-effect transistor from the switch-on level (U on) to the first switch-off level (U off1) with the auxiliary switch open, the inductor and the damping resistor bring about a temporary change in the gate-source voltage (U GS1) of the first field-effect transistor to the second switch-off level (U off2), - and, in order to change the gate-source voltage (U GS1) of the first field-effect transistor from the switch-on level (U on) to the second switch-off level (U off2), the control voltage (U C1) of the first field-effect transistor with the auxiliary switch open is changed from the switch-on level (U on) to the first switch-off level (U off1). - the gate-source voltage (U GS1) of the first field-effect transistor is firstly changed from the switch-on level (U on) to a second switch-off level (U off2), the magnitude of which is greater than the magnitude of the first switch-off level (U off1), - then the gate-source voltage (U GS2) of the second field-effect transistor is changed from the first switch-off level (U off1) to the switch-on level (U on) - and thereafter the gate-source voltage (U GS1) of the first field-effect transistor is changed from the second switch-off level (U off2) to the first switch-off level (U off1), - and, in order to change the gate-source voltage (U GS1) of the first field-effect transistor from the switch-on level (U on) to the second switch-off level (U off2), the control voltage (U C1) of the first field-effect transistor with the auxiliary switch open is changed from the switch-on level (U on) to the first switch-off level (U off1).