mhurhangee/ep-ind-claims huggingface dataset:
A circuit comprising: a switch configured to couple a capacitor to a first current source to discharge the capacitor responsive to receipt of an input signal having a first binary state, the switch being further configured to couple the capacitor to a second current source to charge the capacitor responsive to receipt of the input signal having a complementary second binary state; an inverter configured to drive an output signal into the first and second binary states responsive to a comparison of a voltage on a terminal for the capacitor to an at least one inverter threshold voltage; a logic circuit configured to couple the terminal to a power supply node responsive to the inverter driving the output signal into the second binary state while the input signal is in the second binary state, the logic circuit being further configured to couple the terminal to ground responsive to the inverter driving the output signal into the first binary state while the input signal is in the first binary state; and an activity detector configured to determine whether the input signal is in a low frequency mode in which the output signal transitions into the first and second binary states responsive to transitions of the input signal into the first and second binary states and to determine whether the input signal is in a high frequency mode in which the output signal does not transition into the first and second binary states responsive to the transitions of the input signal into the first and second binary states. a switch configured to couple a capacitor to a first current source to discharge the capacitor responsive to receipt of an input signal having a first binary state, the switch being further configured to couple the capacitor to a second current source to charge the capacitor responsive to receipt of the input signal having a complementary second binary state; an inverter configured to drive an output signal into the first and second binary states responsive to a comparison of a voltage on a terminal for the capacitor to an at least one inverter threshold voltage; a logic circuit configured to couple the terminal to a power supply node responsive to the inverter driving the output signal into the second binary state while the input signal is in the second binary state, the logic circuit being further configured to couple the terminal to ground responsive to the inverter driving the output signal into the first binary state while the input signal is in the first binary state; and an activity detector configured to determine whether the input signal is in a low frequency mode in which the output signal transitions into the first and second binary states responsive to transitions of the input signal into the first and second binary states and to determine whether the input signal is in a high frequency mode in which the output signal does not transition into the first and second binary states responsive to the transitions of the input signal into the first and second binary states.
A solar cell, comprising: a silicon substrate; a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities; a first dielectric layer, disposed on a front side of the silicon substrate; a second dielectric layer, disposed between the first doped region and the second doped region; and a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region; wherein: the first doped region and the second doped region use a doped region structure, the doped region structure comprises a first doped layer, a passivation layer, and a second doped layer that are disposed on the silicon substrate in sequence; wherein: the passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region; the second doped layer is connected to the silicon substrate through the doped hole region and the first doped layer; one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region; and the first doped layer and the second doped layer in the P-type doped region are P-type doped layers, and the first doped layer and the second doped layer in the N-type doped region are N-type doped layers, characterised in that: a thickness of a passivation layer in the P-type doped region is greater than a thickness of a passivation layer in the N-type doped region. a silicon substrate; a first doped region and a second doped region, alternately disposed on a back side of the silicon substrate and having opposite polarities; a first dielectric layer, disposed on a front side of the silicon substrate; a second dielectric layer, disposed between the first doped region and the second doped region; and a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region; the passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region; the second doped layer is connected to the silicon substrate through the doped hole region and the first doped layer; one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region; and the first doped layer and the second doped layer in the P-type doped region are P-type doped layers, and the first doped layer and the second doped layer in the N-type doped region are N-type doped layers,
A gasket (1, 2) for a fuel battery, the gasket (1, 2) being integrally formed by a rubber-like elastic material in an outer periphery of a gas diffusion layer (3, 4) which is interposed between a separator (6, 7) and a membrane electrode assembly, and being brought into close contact with said separator (6, 7), wherein a gas lead-in groove (1b, 2b) is formed in a facing surface of the gasket (1, 2) to said separator (6, 7), the gas lead-in groove (1b, 2b) communicating a manifold hole (1a, 2a, 6a, 7a) provided in the gasket (1, 2) and a gas reaction area by said membrane electrode assembly with each other, and the gas lead-in groove (1b, 2b) extends to an end portion of said gas diffusion layer (3, 4), wherein a reinforcing plate (13, 23) is integrally provided in a gasket main body (11, 21) of the gasket (1, 2), characterized in that the gas lead-in groove (1b, 2b) is formed in the reinforcing plate (13, 23).
A power control method, comprising: obtaining, by a terminal device, slot format information, SFI, of a target slot in a non-serving cell; and determining, by the terminal device based on the SFI, a power control parameter set used by the terminal device to send data in the target slot in a serving cell, wherein the power control parameter set belongs to a set of power control parameter sets configured for the terminal device. obtaining, by a terminal device, slot format information, SFI, of a target slot in a non-serving cell; and determining, by the terminal device based on the SFI, a power control parameter set used by the terminal device to send data in the target slot in a serving cell, wherein the power control parameter set belongs to a set of power control parameter sets configured for the terminal device.
A method of forming a resistive memory device, comprising: forming an alternating stack of insulating layers and electrically conductive layers that extend along a first horizontal direction over a substrate; forming laterally recessed regions by laterally recessing sidewalls of the electrically conductive layers relative to sidewalls of the insulating layers; forming a conformal barrier material layer in the lateral recessed regions and on the sidewalls of the insulating layers, wherein lateral cavities are present in unfilled volumes of the laterally recessed regions; depositing an amorphous precursor memory material layer in the lateral cavities and over the conformal barrier material layer; selectively crystallizing portions of the amorphous precursor memory material layer in the lateral cavities into crystalline memory material portions while not crystallizing vertical portions of the amorphous precursor memory material layer on the sidewalls of the insulating layers employing an anneal process; removing remaining amorphous portions of the amorphous precursor memory material layer selective to the crystalline memory material portions; and forming a vertical conductive line on the crystalline memory material portions. forming an alternating stack of insulating layers and electrically conductive layers that extend along a first horizontal direction over a substrate; forming laterally recessed regions by laterally recessing sidewalls of the electrically conductive layers relative to sidewalls of the insulating layers; forming a conformal barrier material layer in the lateral recessed regions and on the sidewalls of the insulating layers, wherein lateral cavities are present in unfilled volumes of the laterally recessed regions; depositing an amorphous precursor memory material layer in the lateral cavities and over the conformal barrier material layer; selectively crystallizing portions of the amorphous precursor memory material layer in the lateral cavities into crystalline memory material portions while not crystallizing vertical portions of the amorphous precursor memory material layer on the sidewalls of the insulating layers employing an anneal process; removing remaining amorphous portions of the amorphous precursor memory material layer selective to the crystalline memory material portions; and forming a vertical conductive line on the crystalline memory material portions.
A circular saw machine, comprising: a processing head capable of moving in a cutting direction for imparting a cut to a workpiece and an opposite direction opposite to the cutting direction, and having a main shaft capable of rotating and a circular saw blade fixed to the main shaft; and a movable saw blade guide set provided to be movable in the cutting direction and the opposite direction on the processing head for guiding to pinch a body part of the circular saw blade on a diameter direction inner side of a cutting region in which a cutting effect in the circular saw blade is effectuated, wherein the movable saw blade guide set is configured to move relatively with respect to the processing head in the opposite direction, in coordination with a movement in the cutting direction of the processing head, as a cutting into the workpiece progresses, wherein the processing head is provided to be movable in the cutting direction and the opposite direction by being guided via a plurality of guide rails extended in the cutting direction, characterized in that the processing head has a pair of slide guides (65, 67) extended in the cutting direction, and in that the movable saw blade guide set is made to be movable in the cutting direction and the opposite direction via the pair of slide guides (65, 67), and moves relative to the processing head in the direction opposite to a movement direction of the processing head in coordination with the movement in the cutting direction of the processing head. a processing head capable of moving in a cutting direction for imparting a cut to a workpiece and an opposite direction opposite to the cutting direction, and having a main shaft capable of rotating and a circular saw blade fixed to the main shaft; and a movable saw blade guide set provided to be movable in the cutting direction and the opposite direction on the processing head for guiding to pinch a body part of the circular saw blade on a diameter direction inner side of a cutting region in which a cutting effect in the circular saw blade is effectuated, wherein the movable saw blade guide set is configured to move relatively with respect to the processing head in the opposite direction, in coordination with a movement in the cutting direction of the processing head, as a cutting into the workpiece progresses, wherein the processing head is provided to be movable in the cutting direction and the opposite direction by being guided via a plurality of guide rails extended in the cutting direction, characterized in that the processing head has a pair of slide guides (65, 67) extended in the cutting direction, and in that the movable saw blade guide set is made to be movable in the cutting direction and the opposite direction via the pair of slide guides (65, 67), and moves relative to the processing head in the direction opposite to a movement direction of the processing head in coordination with the movement in the cutting direction of the processing head.
An electrode formed on a base material comprising a ceramics, characterized in that the electrode comprises: a matrix comprising an Ni-Cr alloy, with a Cr content of 20 to 60 wt.%, or an MCrAlY alloy, wherein M is at least one material selected from Fe, Co and Ni; and a disperse phase dispersed in the matrix, the disperse phase comprising an oxide mineral having a laminated structure, wherein a ratio of area occupied by the disperse phase in a cross section of the electrode is 40 to 80%. a matrix comprising an Ni-Cr alloy, with a Cr content of 20 to 60 wt.%, or an MCrAlY alloy, wherein M is at least one material selected from Fe, Co and Ni; and a disperse phase dispersed in the matrix, the disperse phase comprising an oxide mineral having a laminated structure, wherein a ratio of area occupied by the disperse phase in a cross section of the electrode is 40 to 80%.
An impact-absorbing member (10; 110; 210; 310; 410; 510; 610) including a tubular body (11; 111; 211) having a polygonal shape in cross section perpendicular to a longitudinal direction of the tubular body (11; 111; 211), the tubular body (11; 111; 211) comprising: a plurality of flat portions (12; 112; 212; 612); and a plurality of corner portions (13; 613) provided between the flat portions (12; 112; 212; 612), characterised in that a thermal treatment with a laser light is applied at least to a first field of the tubular body (11; 111; 211) located in a distance X that satisfies Expression below, where L is an average side length of all sides constituting the polygonal shape at an end portion in the longitudinal direction of the tubular body (11; 111; 211), X is a distance in the longitudinal direction from the end portion of the tubular body (11; 111; 211), and a is an integer with a value of one or more; a thermal treatment with the laser light is applied to a second field of the tubular body (11; 111; 211) located in the distance X that satisfies Expression below; and a ratio of a first thermally treated area having a thermal treatment with the laser light applied thereto relative to an entire outer peripheral area of the first field is higher than a ratio of a second thermally treated area having a thermal treatment with the laser light applied thereto relative to an entire outer peripheral area of the second field: a − 1 / 2 L ≤ X ≤ aL a − 1 L ≤ X ≤ a − 1 / 2 L a plurality of flat portions (12; 112; 212; 612); and a plurality of corner portions (13; 613) provided between the flat portions (12; 112; 212; 612), characterised in that a thermal treatment with a laser light is applied at least to a first field of the tubular body (11; 111; 211) located in a distance X that satisfies Expression below, where L is an average side length of all sides constituting the polygonal shape at an end portion in the longitudinal direction of the tubular body (11; 111; 211), X is a distance in the longitudinal direction from the end portion of the tubular body (11; 111; 211), and a is an integer with a value of one or more; a thermal treatment with the laser light is applied to a second field of the tubular body (11; 111; 211) located in the distance X that satisfies Expression below; and a ratio of a first thermally treated area having a thermal treatment with the laser light applied thereto relative to an entire outer peripheral area of the first field is higher than a ratio of a second thermally treated area having a thermal treatment with the laser light applied thereto relative to an entire outer peripheral area of the second field: a − 1 / 2 L ≤ X ≤ aL a − 1 L ≤ X ≤ a − 1 / 2 L
Tyre, one of its constituent elements of which comprises a rubber composition based on at least one elastomer matrix comprising a diene elastomer/polylactide copolymer, the percentage by weight of polylactide in the said copolymer being between 10% and 50% by weight, with respect to the weight of the copolymer, in which the diene elastomer/polylactide copolymer is selected from: ∘ a triblock of PLA-diene elastomer-PLA structure, with a number-average molar mass, Mn, ranging from 50 000 g/mol to 300 000 g/mol, ∘ a comb copolymer having a diene elastomer backbone and pendant PLA blocks along the backbone, with a number-average molar mass, Mn, ranging from 100 000 g/mol to 600 000 g/mol; and ∘ a diblock copolymer of PLA-diene elastomer structure, with a number-average molar mass, Mn, ranging from 25 000 g/mol to 200 000 g/mol; the molar masses being measured with the polystyrene equivalent size exclusion chromatography technique, when the copolymer is a triblock copolymer or a comb copolymer, the composition may not contain a cross-linking system, when the copolymer is a diblock copolymer, the composition contains a cross-linking system, the diene elastomer/polylactide copolymer represents at least 65% by weight of the elastomer matrix. ∘ a triblock of PLA-diene elastomer-PLA structure, with a number-average molar mass, Mn, ranging from 50 000 g/mol to 300 000 g/mol, ∘ a comb copolymer having a diene elastomer backbone and pendant PLA blocks along the backbone, with a number-average molar mass, Mn, ranging from 100 000 g/mol to 600 000 g/mol; and ∘ a diblock copolymer of PLA-diene elastomer structure, with a number-average molar mass, Mn, ranging from 25 000 g/mol to 200 000 g/mol;
A method comprising: obtaining monitored messages between a Mobility Management Entity and a Serving Gateway in a 5G Non-Standalone system; detecting base stations that are gNodeB base stations based on the monitored messages, wherein the detecting is based on a second Modify Bearer Request or Response message after a first Modify Bearer Request or Response message and a Create Session Request or Response message, wherein the second Modify Bearer Request or Response message is one of i) without an eNodeB identifier and ii) with an eNodeB identifier from the corresponding Create Session Request or Response message, each indicating a new address associated with the second Modify Bearer Request or Response message is a gNodeB base station; and storing the detected gNodeB base stations in a database of known gNodeB base stations in the 5G Non-Standalone system. obtaining monitored messages between a Mobility Management Entity and a Serving Gateway in a 5G Non-Standalone system; detecting base stations that are gNodeB base stations based on the monitored messages, wherein the detecting is based on a second Modify Bearer Request or Response message after a first Modify Bearer Request or Response message and a Create Session Request or Response message, wherein the second Modify Bearer Request or Response message is one of i) without an eNodeB identifier and ii) with an eNodeB identifier from the corresponding Create Session Request or Response message, each indicating a new address associated with the second Modify Bearer Request or Response message is a gNodeB base station; and wherein the detecting is based on a second Modify Bearer Request or Response message after a first Modify Bearer Request or Response message and a Create Session Request or Response message, wherein the second Modify Bearer Request or Response message is one of i) without an eNodeB identifier and ii) with an eNodeB identifier from the corresponding Create Session Request or Response message, each indicating a new address associated with the second Modify Bearer Request or Response message is a gNodeB base station; and storing the detected gNodeB base stations in a database of known gNodeB base stations in the 5G Non-Standalone system.
A sealant material for sealing joints comprising: (a) a multifilament or spun polyphenylene sulfide yarn; and (b) a joint sealing composition comprising a silicone oil, the polyphenylene sulfide yarn being coated with the joint sealant composition, wherein the silicone oil is selected from polydimethylsiloxane terminated with methyl or substituted with phenyl groups. (a) a multifilament or spun polyphenylene sulfide yarn; and (b) a joint sealing composition comprising a silicone oil,
An insulin analogue comprising an insulin B-chain polypeptide modified with at least one of an O-linked monosaccharide pyranoside adduct at the side chain of residue B27 and an O-linked monosaccharide pyranoside adduct at the side chain of residue B30, relative to human insulin.
An introducer for introducing a surgical circular stapler having a stapling head supporting an annular staple cartridge therein into a patient, said introducer comprising a hollow sheath having an open proximal end sized to be inserted over at least a distal portion of the stapling head and a distal end wherein the annular staple cartridge defines an open central area and wherein said sheath has a central portion, characterized in that the distal end of the sheath defines a circumferentially extending bumper portion to enclose the open central area, and wherein said bumper portion covering a distal face of the annular staple cartridge and extending above a plane formed by the distal face of the staple cartridge,and in that the central portion of the sheath extends inwardly from said circumferentially-extending bumper portion to enclose the open central area, and wherein said bumper portionhas at least one hollow area formed therein.