An emitting device comprising: - a first light emitter, the first light emitter being adapted to emit a first radiation, and - a second light emitter, the second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles, each particle being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter (40A, 40B), the particles of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter, such as a surface of the first semiconducting structure, and characterized in that the particles of the second radiation converter are attached by grafting to a surface of the second light emitter, such as a surface of the second semiconducting structure. - a first light emitter, the first light emitter being adapted to emit a first radiation, and - a second light emitter, the second light emitter being adapted to emit a second radiation, the second radiation being different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles, each particle being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter (40A, 40B), the particles of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter, such as a surface of the first semiconducting structure, and characterized in that the particles of the second radiation converter are attached by grafting to a surface of the second light emitter, such as a surface of the second semiconducting structure. the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation different from the first radiation and the second radiation, each radiation converter comprising a set of particles, each particle being able to convert the third radiation into the first or second radiation emitted by the corresponding light emitter (40A, 40B), the particles of the first radiation converter being attached by a bulk of photosensitive resin to a surface of the first light emitter, such as a surface of the first semiconducting structure, and characterized in that the particles of the second radiation converter are attached by grafting to a surface of the second light emitter, such as a surface of the second semiconducting structure.