A method of making a circuit pattern, wherein the method comprises steps of: Step: providing a master substrate which comprises a transparent substrate and a first photosensitive layer formed on the transparent substrate; wherein the first photosensitive layer includes multiple photosensitive particles; the photosensitive particles of the first photosensitive layer comprise a first metal salt containing first metal ions, wherein the first metal ions comprise silver ions or chromium ions; Step: providing a first energy beam to irradiate the first photosensitive layer to reduce the first metal ions that are in a predetermined area of the first photosensitive layer, so as to form multiple atomized first metal particles; wherein the first energy beam has a wavelength ranging from 1 picometer to 200 nanometers; Step: removing unreduced photosensitive particles of the first photosensitive layer by a first fixer to obtain a master mask; wherein the atomized first metal particles form a first predetermined pattern on the master mask; Step: providing a chip which comprises a semiconductor substrate and a second photosensitive layer formed on the semiconductor substrate; wherein the second photosensitive layer includes multiple photosensitive particles; the photosensitive particles of the second photosensitive layer comprise a second metal salt containing second metal ions, wherein the second metal ions comprise silver ions or chromium ions; Step: disposing the master mask on the second photosensitive layer to form a complex layer, and then providing a second energy beam to irradiate the complex layer to reduce the second metal ions that are in an area of the second photosensitive layer which is not covered by the first predetermined pattern of the master mask, so as to form multiple atomized second metal particles; wherein the second energy beam has a wavelength ranging from 1 picometer to 200 nanometers; and Step: removing unreduced photosensitive particles of the second photosensitive layer by a second fixer to obtain the circuit pattern; wherein the circuit pattern has a second predetermined pattern formed by the atomized second metal particles; wherein the second predetermined pattern is a negative image of the first predetermined pattern, and a line spacing in the circuit pattern ranges from 1 picometer to 100 nanometers. Step: providing a master substrate which comprises a transparent substrate and a first photosensitive layer formed on the transparent substrate; wherein the first photosensitive layer includes multiple photosensitive particles; the photosensitive particles of the first photosensitive layer comprise a first metal salt containing first metal ions, wherein the first metal ions comprise silver ions or chromium ions; Step: providing a first energy beam to irradiate the first photosensitive layer to reduce the first metal ions that are in a predetermined area of the first photosensitive layer, so as to form multiple atomized first metal particles; wherein the first energy beam has a wavelength ranging from 1 picometer to 200 nanometers; Step: removing unreduced photosensitive particles of the first photosensitive layer by a first fixer to obtain a master mask; wherein the atomized first metal particles form a first predetermined pattern on the master mask; Step: providing a chip which comprises a semiconductor substrate and a second photosensitive layer formed on the semiconductor substrate; wherein the second photosensitive layer includes multiple photosensitive particles; the photosensitive particles of the second photosensitive layer comprise a second metal salt containing second metal ions, wherein the second metal ions comprise silver ions or chromium ions; Step: disposing the master mask on the second photosensitive layer to form a complex layer, and then providing a second energy beam to irradiate the complex layer to reduce the second metal ions that are in an area of the second photosensitive layer which is not covered by the first predetermined pattern of the master mask, so as to form multiple atomized second metal particles; wherein the second energy beam has a wavelength ranging from 1 picometer to 200 nanometers; and Step: removing unreduced photosensitive particles of the second photosensitive layer by a second fixer to obtain the circuit pattern; wherein the circuit pattern has a second predetermined pattern formed by the atomized second metal particles; wherein the second predetermined pattern is a negative image of the first predetermined pattern, and a line spacing in the circuit pattern ranges from 1 picometer to 100 nanometers.