An Electrostatic Discharge, ESD, protection semiconductor device for providing ESD protection between a first and a second terminal of another semiconductor device, the ESD protection device comprising a semiconductor body having a first major surface, wherein the semiconductor device further comprises a first ESD terminal arranged to be connected to a first terminal of the other semiconductor device, a second ESD terminal arranged to be connected to a second terminal of the other semiconductor device, and a floating terminal, and wherein the semiconductor body further comprises: - a first ESD region (106, 213) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the first ESD region comprises: - a first diode region (107, 214) of a second conductivity type, wherein the first diode region is connected to the first ESD terminal; - a second diode region (108, 215) of the second conductivity type, spaced apart from said first diode region, wherein the second diode region is connected to the floating terminal; - a second ESD region (110, 218) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the second ESD region comprises: - a third diode region (109, 219) of the second conductivity type, wherein the third diode region is connected to the floating terminal; - a fourth diode region (111, 220) of the second conductivity type, spaced apart from said third diode region, wherein the fourth diode region is connected to the second ESD terminal, wherein, seen in a view of said ESD protection semiconductor device perpendicular to said first major surface, said first and second ESD regions are both elongated, and wherein - said floating terminal comprises multiple individual floating strips provided electrically isolated from each other and each for providing an individual connections between said second diode region and said third diode region. wherein the semiconductor device further comprises a first ESD terminal arranged to be connected to a first terminal of the other semiconductor device, a second ESD terminal arranged to be connected to a second terminal of the other semiconductor device, and a floating terminal, and wherein the semiconductor body further comprises: - a first ESD region (106, 213) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the first ESD region comprises: - a first diode region (107, 214) of a second conductivity type, wherein the first diode region is connected to the first ESD terminal; - a second diode region (108, 215) of the second conductivity type, spaced apart from said first diode region, wherein the second diode region is connected to the floating terminal; - a second ESD region (110, 218) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the second ESD region comprises: - a third diode region (109, 219) of the second conductivity type, wherein the third diode region is connected to the floating terminal; - a fourth diode region (111, 220) of the second conductivity type, spaced apart from said third diode region, wherein the fourth diode region is connected to the second ESD terminal, - a first ESD region (106, 213) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the first ESD region comprises: - a first diode region (107, 214) of a second conductivity type, wherein the first diode region is connected to the first ESD terminal; - a second diode region (108, 215) of the second conductivity type, spaced apart from said first diode region, wherein the second diode region is connected to the floating terminal; - a first diode region (107, 214) of a second conductivity type, wherein the first diode region is connected to the first ESD terminal; - a second diode region (108, 215) of the second conductivity type, spaced apart from said first diode region, wherein the second diode region is connected to the floating terminal; - a second ESD region (110, 218) of a first conductivity type and extending from the first major surface into said semiconductor body, wherein the second ESD region comprises: - a third diode region (109, 219) of the second conductivity type, wherein the third diode region is connected to the floating terminal; - a fourth diode region (111, 220) of the second conductivity type, spaced apart from said third diode region, wherein the fourth diode region is connected to the second ESD terminal, - a third diode region (109, 219) of the second conductivity type, wherein the third diode region is connected to the floating terminal; - a fourth diode region (111, 220) of the second conductivity type, spaced apart from said third diode region, wherein the fourth diode region is connected to the second ESD terminal, wherein, seen in a view of said ESD protection semiconductor device perpendicular to said first major surface, said first and second ESD regions are both elongated, and wherein - said floating terminal comprises multiple individual floating strips provided electrically isolated from each other and each for providing an individual connections between said second diode region and said third diode region. - said floating terminal comprises multiple individual floating strips provided electrically isolated from each other and each for providing an individual connections between said second diode region and said third diode region.