A measurement device comprising: a suspended semiconductor wire; a first control circuit designed to apply a first electrical signal between first (105c-1) and second (105c-2) ends of the suspended semiconductor wire; and a second control circuit designed to measure a second electrical signal between first (105c INT-1) and second (105c INT-2) intermediate nodes of the suspended semiconductor wire, wherein the first electrical signal is a bias current between the first (105c-1) and second (105c-2) ends of the suspended semiconductor wire, and wherein the second control circuit is configured to measure the voltage between the first (105c INT-1) and second (105c INT-2) intermediate nodes of the suspended semiconductor wire (105c-1), the device further comprising a first probe wire made of a semiconductor material, coupling the first intermediate node (105c INT-1) of the suspended semiconductor wire to a third conductive terminal, and a second probe wire made of a semiconductor material, coupling the second intermediate node (105c INT-2) of the suspended semiconductor wire to a fourth conductive terminal, the second control circuit being connected to the third and fourth conductive terminals, wherein the first probe wire has a thermal resistance (R TH5) higher than the thermal resistance (R TH3) of a first lateral section of the suspended semiconductor wire, extending from the first end (105c-1) of the suspended semiconductor wire to the first intermediate node (105c INT-1) of the suspended semiconductor wire, and wherein the second probe wire has a thermal resistance (R TH6) greater than the thermal resistance (R TH4) of a second lateral section of the suspended semiconductor wire, extending from the second end (105c-2) of the suspended semiconductor wire to the second intermediate node (105c INT-2) of the suspended semiconductor wire. a suspended semiconductor wire; a first control circuit designed to apply a first electrical signal between first (105c-1) and second (105c-2) ends of the suspended semiconductor wire; and a second control circuit designed to measure a second electrical signal between first (105c INT-1) and second (105c INT-2) intermediate nodes of the suspended semiconductor wire, wherein the first electrical signal is a bias current between the first (105c-1) and second (105c-2) ends of the suspended semiconductor wire, and wherein the second control circuit is configured to measure the voltage between the first (105c INT-1) and second (105c INT-2) intermediate nodes of the suspended semiconductor wire (105c-1), the device further comprising a first probe wire made of a semiconductor material, coupling the first intermediate node (105c INT-1) of the suspended semiconductor wire to a third conductive terminal, and a second probe wire made of a semiconductor material, coupling the second intermediate node (105c INT-2) of the suspended semiconductor wire to a fourth conductive terminal, the second control circuit being connected to the third and fourth conductive terminals, wherein the first probe wire has a thermal resistance (R TH5) higher than the thermal resistance (R TH3) of a first lateral section of the suspended semiconductor wire, extending from the first end (105c-1) of the suspended semiconductor wire to the first intermediate node (105c INT-1) of the suspended semiconductor wire, and wherein the second probe wire has a thermal resistance (R TH6) greater than the thermal resistance (R TH4) of a second lateral section of the suspended semiconductor wire, extending from the second end (105c-2) of the suspended semiconductor wire to the second intermediate node (105c INT-2) of the suspended semiconductor wire.