A touch sensor integrated type display device comprising: gate lines (Gm), which are directly formed on a substrate (SUBS1), a gate insulating layer formed on an entire surface of the substrate (SUBS1) on which the gate lines (Gm) are formed; data lines (Dn) directly formed on the gate insulating layer to cross over the gate lines (Gm); a plurality of thin film transistors which are formed on the gate insulating layer, each of the thin film transistors has a source electrode connected to a respective one of the data lines (Dn); a plurality of pixel electrodes directly formed on the gate insulating layer and formed in areas defined by the crossing of the gate lines (Gm) and the data lines (Dn); a common electrode including at least two touch driving electrodes (T11, T12), which overlap the plurality of pixel electrodes with an insulating layer interposed between them, and at least one touch sensing electrode, which is disposed adjacent to the at least two touch driving electrodes; first signal lines (Ty11, Ty21) which are directly formed on the gate insulating layer and which are respectively connected to the at least two touch driving electrodes (T11, T12) and are all arranged parallel to one another in a first direction, each of the first signal lines (Ty11, Ty21) being connected to a different one of the at least two touch driving electrodes (T11, T12) in the first direction, wherein the common electrode is formed on the insulating layer and is connected to the plurality of first signal lines (Ty11, Ty21) through a contact hole formed in the insulating layer; and a second signal line which is connected to the at least one touch sensing electrode and is arranged parallel to the first signal lines (Ty11, Ty21) in the first direction. gate lines (Gm), which are directly formed on a substrate (SUBS1), a gate insulating layer formed on an entire surface of the substrate (SUBS1) on which the gate lines (Gm) are formed; data lines (Dn) directly formed on the gate insulating layer to cross over the gate lines (Gm); a plurality of thin film transistors which are formed on the gate insulating layer, each of the thin film transistors has a source electrode connected to a respective one of the data lines (Dn); a plurality of pixel electrodes directly formed on the gate insulating layer and formed in areas defined by the crossing of the gate lines (Gm) and the data lines (Dn); a common electrode including at least two touch driving electrodes (T11, T12), which overlap the plurality of pixel electrodes with an insulating layer interposed between them, and at least one touch sensing electrode, which is disposed adjacent to the at least two touch driving electrodes; first signal lines (Ty11, Ty21) which are directly formed on the gate insulating layer and which are respectively connected to the at least two touch driving electrodes (T11, T12) and are all arranged parallel to one another in a first direction, each of the first signal lines (Ty11, Ty21) being connected to a different one of the at least two touch driving electrodes (T11, T12) in the first direction, wherein the common electrode is formed on the insulating layer and is connected to the plurality of first signal lines (Ty11, Ty21) through a contact hole formed in the insulating layer; and a second signal line which is connected to the at least one touch sensing electrode and is arranged parallel to the first signal lines (Ty11, Ty21) in the first direction.