A dual-axis anisotropic magnetoresistive sensor, comprising: a first sensor unit having a resistor bridge including a plurality of magnetoresistors, each magnetoresistor having at least one elongated strip of anisotropic magnetoresistive material having a longitudinal axis substantially parallel to a technological anisotropy axis of the magnetoresistive material; and a second sensor unit having a resistor bridge including a plurality of magnetoresistors having a plurality of elongated strips of the anisotropic magnetoresistive material, wherein the plurality of strips of the second sensor unit include: a first subset of strips having longitudinal axes aligned at a first non-zero angle to the technological anisotropy axis, and a second subset of strips having longitudinal axes aligned at a second angle to the technological anisotropy axis, wherein the second angle has substantially the same magnitude but opposite polarity as the first angle, and a coil configured to selectively generate different magnetic fields at the first and second subsets of strips (76a and 80a) of the second sensor unit to set a magnetization of the strips of the first and second subsets of strips to different directions along the strip longitudinal axes, characterized in that the first and second sensor units are formed on a common integrated circuit substrate; and the anisotropic magnetoresistive material has a common technological anisotropy axis, set by both the crystal structure and processing conditions of the material. a first sensor unit having a resistor bridge including a plurality of magnetoresistors, each magnetoresistor having at least one elongated strip of anisotropic magnetoresistive material having a longitudinal axis substantially parallel to a technological anisotropy axis of the magnetoresistive material; and a second sensor unit having a resistor bridge including a plurality of magnetoresistors having a plurality of elongated strips of the anisotropic magnetoresistive material, wherein the plurality of strips of the second sensor unit include: a first subset of strips having longitudinal axes aligned at a first non-zero angle to the technological anisotropy axis, and a second subset of strips having longitudinal axes aligned at a second angle to the technological anisotropy axis, wherein the second angle has substantially the same magnitude but opposite polarity as the first angle, and a coil configured to selectively generate different magnetic fields at the first and second subsets of strips (76a and 80a) of the second sensor unit to set a magnetization of the strips of the first and second subsets of strips to different directions along the strip longitudinal axes, a first subset of strips having longitudinal axes aligned at a first non-zero angle to the technological anisotropy axis, and a second subset of strips having longitudinal axes aligned at a second angle to the technological anisotropy axis, wherein the second angle has substantially the same magnitude but opposite polarity as the first angle, and a coil configured to selectively generate different magnetic fields at the first and second subsets of strips (76a and 80a) of the second sensor unit to set a magnetization of the strips of the first and second subsets of strips to different directions along the strip longitudinal axes, the first and second sensor units are formed on a common integrated circuit substrate; and the anisotropic magnetoresistive material has a common technological anisotropy axis, set by both the crystal structure and processing conditions of the material.