An optoelectronic semiconductor body, which contains a semiconductor material which is composed of a first component and a second component different from the first component, and which comprises a multiple quantum well structure arranged between an n-conducting layer and a p-conducting layer, the multiple quantum well structure consisting of - a layer stack, which consists of a plurality of quantum well layers and at least one barrier layer, one barrier layer being arranged between each pair of successive quantum wall layers, which barrier layer adjoins both quantum wall layers; - an n-side terminating layer, which adjoins the layer stack and the n-conducting layer; and - a p-side terminating layer, which is arranged between the layer stack and the p-conducting layer and adjoins the layer stack, wherein the first component of the semiconductor material is formed of In, and wherein the mole fraction (x) of the first component of the semiconductor material - is greater in each of the quantum wall layers than in the n-side terminating layer, in the at least one barrier layer and in the p-side terminating layer; and - is greater in the n-side terminating layer than in the n-conducting layer and is greater in the p-side terminating layer than in the p-conducting layer, and wherein - the n-conducting layer comprises a p-side boundary zone, which adjoins an n-side boundary zone of the n-side terminating layer, - the p-side boundary zone of the n-conducting layer and the n-side boundary zone of the n-side terminating layer are doped with an n-dopant, - the n-side terminating layer comprises a p-side boundary zone, which directly adjoins the layer stack and which is nominally undoped, and - the n-dopant in the p-side boundary zone of the n-conducting layer and in the n-side boundary zone of the n-side terminating layer is present in a concentration of greater than or equal to 5 × 10 18 atoms/cm 3. - a layer stack, which consists of a plurality of quantum well layers and at least one barrier layer, one barrier layer being arranged between each pair of successive quantum wall layers, which barrier layer adjoins both quantum wall layers; - an n-side terminating layer, which adjoins the layer stack and the n-conducting layer; and - a p-side terminating layer, which is arranged between the layer stack and the p-conducting layer and adjoins the layer stack, wherein the first component of the semiconductor material is formed of In, and wherein the mole fraction (x) of the first component of the semiconductor material - is greater in each of the quantum wall layers than in the n-side terminating layer, in the at least one barrier layer and in the p-side terminating layer; and - is greater in the n-side terminating layer than in the n-conducting layer and is greater in the p-side terminating layer than in the p-conducting layer, and wherein - the n-conducting layer comprises a p-side boundary zone, which adjoins an n-side boundary zone of the n-side terminating layer, - the p-side boundary zone of the n-conducting layer and the n-side boundary zone of the n-side terminating layer are doped with an n-dopant, - the n-side terminating layer comprises a p-side boundary zone, which directly adjoins the layer stack and which is nominally undoped, and - the n-dopant in the p-side boundary zone of the n-conducting layer and in the n-side boundary zone of the n-side terminating layer is present in a concentration of greater than or equal to 5 × 10 18 atoms/cm 3.