A method for wet etching a substrate using a single wafer wet etching processing system to produce a substrate having a desired final etch profile, including measuring, at a measurement station, initial thickness information for a particular substrate; calculating an etch profile for the particular substrate according to the initial thickness information; generating an etch recipe for the particular substrate according to the calculated etch profile and the desired final etch profile; and calculating a substrate removal amount that corresponds to an amount of substrate material removed as a result of etching the substrate from the calculated etch profile to the desired final etch profile; the method further comprising: (a) etching the particular substrate with an etchant having a first concentration and according to the etch recipe in order to achieve the desired final etch profile, wherein completion of the etching step depletes the etchant to a second concentration that is less than the first concentration; (b) calculating a spike dosage of etchant chemistry to add back to the etchant after the substrate has been etched but prior to performing a subsequent etch on a subsequent substrate to restore an amount of the etchant from the second concentration to the first concentration, the spike dosage being an amount of the etchant chemistry that once added to the etchant allows a selected etch rate to be at least substantially maintained for successive etch runs and being calculated based on the calculated substrate removal amount; (c) adding the spike dosage to the etchant chemistry after the substrate has been etched and prior to etching a next substrate; and (d) repeating steps (a) to (c) for each subsequent substrate to be etched. measuring, at a measurement station, initial thickness information for a particular substrate; calculating an etch profile for the particular substrate according to the initial thickness information; generating an etch recipe for the particular substrate according to the calculated etch profile and the desired final etch profile; and calculating a substrate removal amount that corresponds to an amount of substrate material removed as a result of etching the substrate from the calculated etch profile to the desired final etch profile; the method further comprising: (a) etching the particular substrate with an etchant having a first concentration and according to the etch recipe in order to achieve the desired final etch profile, wherein completion of the etching step depletes the etchant to a second concentration that is less than the first concentration; (b) calculating a spike dosage of etchant chemistry to add back to the etchant after the substrate has been etched but prior to performing a subsequent etch on a subsequent substrate to restore an amount of the etchant from the second concentration to the first concentration, the spike dosage being an amount of the etchant chemistry that once added to the etchant allows a selected etch rate to be at least substantially maintained for successive etch runs and being calculated based on the calculated substrate removal amount; (c) adding the spike dosage to the etchant chemistry after the substrate has been etched and prior to etching a next substrate; and (d) repeating steps (a) to (c) for each subsequent substrate to be etched. (a) etching the particular substrate with an etchant having a first concentration and according to the etch recipe in order to achieve the desired final etch profile, wherein completion of the etching step depletes the etchant to a second concentration that is less than the first concentration; (b) calculating a spike dosage of etchant chemistry to add back to the etchant after the substrate has been etched but prior to performing a subsequent etch on a subsequent substrate to restore an amount of the etchant from the second concentration to the first concentration, the spike dosage being an amount of the etchant chemistry that once added to the etchant allows a selected etch rate to be at least substantially maintained for successive etch runs and being calculated based on the calculated substrate removal amount; (c) adding the spike dosage to the etchant chemistry after the substrate has been etched and prior to etching a next substrate; and (d) repeating steps (a) to (c) for each subsequent substrate to be etched.