Optoelectronic semiconductor component comprising - a carrier, - at least one semiconductor layer sequence comprising at least one active layer, wherein the semiconductor layer sequence is fitted to the carrier and - a metal mirror, which is situated completely between the carrier and the semiconductor layer sequence and which is designed to reflect a radiation emitted by the active layer, wherein - the carrier and the semiconductor layer sequence project beyond the metal mirror in a lateral direction, and - the metal mirror is surrounded directly by an encapsulation layer in a lateral direction, - the encapsulation layer completely covers flanks of the semiconductor layer sequence and also a radiation passage surface, with the exception of an optionally present connection region for a bonding wire, and - the radiation passage surface is a delimiting surface of the semiconductor layer sequence facing away from the carrier, - a metallic second mirror layer (6, 21) is situated between the metal mirror and the carrier and projects beyond the metal mirror all around in a lateral direction, - the second mirror layer (6, 21) is designed to reflect an electromagnetic radiation generated in the active layer and transmitted through the encapsulation layer, characterized in that - the encapsulation layer is shaped such that it is U-shaped in cross section, and so lugs of the U point away from the metal mirror and an open side of the U thus faces away from the metal mirror, - a thickness of the encapsulation layer is between 20 nm and 100 nm inclusive, and - a protective layer is applied on the encapsulation layer at least in places. - a carrier, - at least one semiconductor layer sequence comprising at least one active layer, wherein the semiconductor layer sequence is fitted to the carrier and - a metal mirror, which is situated completely between the carrier and the semiconductor layer sequence and which is designed to reflect a radiation emitted by the active layer, wherein - the carrier and the semiconductor layer sequence project beyond the metal mirror in a lateral direction, and - the metal mirror is surrounded directly by an encapsulation layer in a lateral direction, - the encapsulation layer completely covers flanks of the semiconductor layer sequence and also a radiation passage surface, with the exception of an optionally present connection region for a bonding wire, and - the radiation passage surface is a delimiting surface of the semiconductor layer sequence facing away from the carrier, - a metallic second mirror layer (6, 21) is situated between the metal mirror and the carrier and projects beyond the metal mirror all around in a lateral direction, - the second mirror layer (6, 21) is designed to reflect an electromagnetic radiation generated in the active layer and transmitted through the encapsulation layer, - the encapsulation layer is shaped such that it is U-shaped in cross section, and so lugs of the U point away from the metal mirror and an open side of the U thus faces away from the metal mirror, - a thickness of the encapsulation layer is between 20 nm and 100 nm inclusive, and - a protective layer is applied on the encapsulation layer at least in places.