A method of manufacturing a plurality of spacers in a film stack for use with a thermal fluid ejector apparatus, comprising: forming at least one electrically-conductive element having sidewalls on a substrate; depositing a plurality of passivation layers and an etch stop layer proximate to the substrate, wherein the plurality of passivation layers includes a spacer passivation layer, an electrical isolator passivation layer, and a chemical isolator passivation layer; and performing etching on the spacer passivation layer to form a plurality of spacers across from the sidewalls of the at least one electrically-conductive element, characterized in that (a) the method comprises: depositing the etch stop layer in contact with the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer on the etch stop layer to be formed into the plurality of spacers; depositing an electrical isolator passivation layer on the plurality of spacers; and depositing a chemical isolator passivation layer on the electrical isolator passivation layer; or (b) the method comprises: depositing an electrical isolator passivation layer on the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer proximate to the substrate; and depositing a chemical isolator passivation layer on the plurality of spacers formed from the spacer passivation layer; and depositing an etch stop layer proximate to the substrate, wherein the etch stop layer is in contact with the electrical isolator passivation layer. forming at least one electrically-conductive element having sidewalls on a substrate; depositing a plurality of passivation layers and an etch stop layer proximate to the substrate, wherein the plurality of passivation layers includes a spacer passivation layer, an electrical isolator passivation layer, and a chemical isolator passivation layer; and performing etching on the spacer passivation layer to form a plurality of spacers across from the sidewalls of the at least one electrically-conductive element, characterized in that (a) the method comprises: depositing the etch stop layer in contact with the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer on the etch stop layer to be formed into the plurality of spacers; depositing an electrical isolator passivation layer on the plurality of spacers; and depositing a chemical isolator passivation layer on the electrical isolator passivation layer; or (b) the method comprises: depositing an electrical isolator passivation layer on the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer proximate to the substrate; and depositing a chemical isolator passivation layer on the plurality of spacers formed from the spacer passivation layer; and depositing an etch stop layer proximate to the substrate, wherein the etch stop layer is in contact with the electrical isolator passivation layer. (a) the method comprises: depositing the etch stop layer in contact with the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer on the etch stop layer to be formed into the plurality of spacers; depositing an electrical isolator passivation layer on the plurality of spacers; and depositing a chemical isolator passivation layer on the electrical isolator passivation layer; or depositing the etch stop layer in contact with the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer on the etch stop layer to be formed into the plurality of spacers; depositing an electrical isolator passivation layer on the plurality of spacers; and depositing a chemical isolator passivation layer on the electrical isolator passivation layer; or (b) the method comprises: depositing an electrical isolator passivation layer on the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer proximate to the substrate; and depositing a chemical isolator passivation layer on the plurality of spacers formed from the spacer passivation layer; and depositing an etch stop layer proximate to the substrate, wherein the etch stop layer is in contact with the electrical isolator passivation layer. depositing an electrical isolator passivation layer on the substrate, and the at least one electrically-conductive element; depositing a spacer passivation layer proximate to the substrate; and depositing a chemical isolator passivation layer on the plurality of spacers formed from the spacer passivation layer; and depositing an etch stop layer proximate to the substrate, wherein the etch stop layer is in contact with the electrical isolator passivation layer.