A method of forming a vertical silicon-carbide metal-oxide semiconductor field effect transistor comprising: forming a P- well (114/228/115) within a first material layer, the P- well (114/228/115) having a generally U-shape in an XY cross-sectional plane of an XYZ coordinate system, wherein the X-direction is parallel to the surface of the first material layer and the Y-direction is perpendicular to said surface, the first material layer doped a first conductivity type, the P- well (114/228/115) doped a second conductivity type and an intermediate region between upright legs of the U-shaped P-well (114/228/115); wherein the dopants of the first and the second conductivity type comprise respectively dopants of the N conductivity type and dopants of the P conductivity type; forming first and second N+ sources (122/123/260/124/125) within the intermediate region, the first and second N+ sources (122/123/260/124/125) spaced apart in an X direction and doped the first conductivity type; forming P+ body regions (118/252/119) within the intermediate region, the P+ body regions (118/252/119) between the first and second N+ sources (122/123/260/124/125) and doped a second conductivity type; forming N+ source rungs in a ladder cell configuration within the intermediate region, wherein a unit cell comprises a P- well (114/228/115) and first and second N+ source region stripes (122/123/260/124/125) extending along the cell length in the Z-direction, said cell comprising a plurality of P+ body regions (118/252/119) alternating with the N+ source rungs along the cell length, said N+ source rungs connecting the first and second N+ source region stripes (122/123/260/124/125) at different locations along the first and second N+ source stripes (122/123/260/124/125); wherein the P+ body region (118/252/119) is disposed between two consecutive source rungs, each source rung extending in the X direction and the source rungs spaced-apart in the Z direction; wherein forming the first and second N+ sources (122/123/260/124/125), forming the P+ body regions (118/252/119) and forming the N+ source rungs each comprise employing a self-aligning technique further comprising masking the first and second N+ sources (122/123/260/124/125), masking rung regions connecting the first and second N+ sources (122/123/260/124/125) and counterdoping exposed regions to a second conductivity type; determining a ratio of the source rung area and the P+ body region (118/252/119) area to control a contact resistance between of the source rungs and the P+ body regions (118/252/119); forming a contact (128/290) by forming a nickel layer in contact with the source rungs and the P+ body regions (118/252/119) and forming a layer comprising aluminum over the nickel layer. forming a P- well (114/228/115) within a first material layer, the P- well (114/228/115) having a generally U-shape in an XY cross-sectional plane of an XYZ coordinate system, wherein the X-direction is parallel to the surface of the first material layer and the Y-direction is perpendicular to said surface, the first material layer doped a first conductivity type, the P- well (114/228/115) doped a second conductivity type and an intermediate region between upright legs of the U-shaped P-well (114/228/115); wherein the dopants of the first and the second conductivity type comprise respectively dopants of the N conductivity type and dopants of the P conductivity type; forming first and second N+ sources (122/123/260/124/125) within the intermediate region, the first and second N+ sources (122/123/260/124/125) spaced apart in an X direction and doped the first conductivity type; forming P+ body regions (118/252/119) within the intermediate region, the P+ body regions (118/252/119) between the first and second N+ sources (122/123/260/124/125) and doped a second conductivity type; forming N+ source rungs in a ladder cell configuration within the intermediate region, wherein a unit cell comprises a P- well (114/228/115) and first and second N+ source region stripes (122/123/260/124/125) extending along the cell length in the Z-direction, said cell comprising a plurality of P+ body regions (118/252/119) alternating with the N+ source rungs along the cell length, said N+ source rungs connecting the first and second N+ source region stripes (122/123/260/124/125) at different locations along the first and second N+ source stripes (122/123/260/124/125); wherein the P+ body region (118/252/119) is disposed between two consecutive source rungs, each source rung extending in the X direction and the source rungs spaced-apart in the Z direction; wherein forming the first and second N+ sources (122/123/260/124/125), forming the P+ body regions (118/252/119) and forming the N+ source rungs each comprise employing a self-aligning technique further comprising masking the first and second N+ sources (122/123/260/124/125), masking rung regions connecting the first and second N+ sources (122/123/260/124/125) and counterdoping exposed regions to a second conductivity type; determining a ratio of the source rung area and the P+ body region (118/252/119) area to control a contact resistance between of the source rungs and the P+ body regions (118/252/119); forming a contact (128/290) by forming a nickel layer in contact with the source rungs and the P+ body regions (118/252/119) and forming a layer comprising aluminum over the nickel layer.