Bandpass transmission filter having a center wavelength λ 0 of transmission, comprising: A waveguide structure arranged on a substrate, a grating structure in the waveguide structure having a side face grating or a top face grating, the grating structure having changing grating pitch values Λ i for diffracting out a guided radiation in the waveguide structure having wavelengths λ 1 which are lower than the center wavelength λ 0, and for reflecting back a guided radiation in the waveguide structure having a wavelength λ 2 which is higher than the center wavelength λ 0, and a radiation absorbing structure, which is formed as a dielectric layer arranged adjacent to the waveguide structure, for absorbing a radiation guided by the waveguide structure having a wavelength λ 3 higher than the wavelength λ 2, with λ 0 < λ 2 < λ 3, wherein the radiation absorbing structure at least partially covers a bottom face of the waveguide structure with the grating structure, and wherein a further dielectric layer is formed between the waveguide structure and the substrate, wherein the dielectric layer and the further dielectric layer are arranged between the waveguide structure and the substrate, wherein the further dielectric layer is formed between the dielectric layer and the substrate, and wherein the further dielectric layer has a material thickness for suppressing a coupling of the waveguide mode from the waveguide structure into the substrate; wherein the waveguide structure comprises a silicon, polysilicon, Si, Ge, AIN or As 2 Se 3 material, wherein the dielectric layer comprises a Si 3 N 4 material, and wherein the further dielectric layer comprises a SiO 2 material. A waveguide structure arranged on a substrate, a grating structure in the waveguide structure having a side face grating or a top face grating, the grating structure having changing grating pitch values Λ i for diffracting out a guided radiation in the waveguide structure having wavelengths λ 1 which are lower than the center wavelength λ 0, and for reflecting back a guided radiation in the waveguide structure having a wavelength λ 2 which is higher than the center wavelength λ 0, and a radiation absorbing structure, which is formed as a dielectric layer arranged adjacent to the waveguide structure, for absorbing a radiation guided by the waveguide structure having a wavelength λ 3 higher than the wavelength λ 2, with λ 0 < λ 2 < λ 3, wherein the radiation absorbing structure at least partially covers a bottom face of the waveguide structure with the grating structure, and wherein a further dielectric layer is formed between the waveguide structure and the substrate, wherein the dielectric layer and the further dielectric layer are arranged between the waveguide structure and the substrate, wherein the further dielectric layer is formed between the dielectric layer and the substrate, and wherein the further dielectric layer has a material thickness for suppressing a coupling of the waveguide mode from the waveguide structure into the substrate; wherein the waveguide structure comprises a silicon, polysilicon, Si, Ge, AIN or As 2 Se 3 material, wherein the dielectric layer comprises a Si 3 N 4 material, and wherein the further dielectric layer comprises a SiO 2 material.