A skyrmion memory circuit comprising: a magnet with a closed-path pattern with a thin film shape capable of generating a skyrmion, wherein the magnet with the closed-path pattern has a width W and a length L in a plane of the thin film, and has a closed-path pattern that has both ends of the length L connected to each other and circularly transfers the skyrmion, characterized in that the magnet with the closed-path pattern includes: an inner circumference edge that defines an inner circumference of the magnet with the closed-path pattern in a plane of the closed-path pattern; and an outer circumference edge that defines an outer circumference, the skyrmion memory circuit includes, in a plane parallel to an extension direction of the magnet with the closed-path pattern: an inner circumference electrode made from a nonmagnetic metal connected to the inner circumference edge of the magnet with the closed-path pattern; and an outer circumference electrode made from a nonmagnetic metal connected to the outer circumference edge of the magnet with the closed-path pattern, and the skyrmion memory circuit has a lateral transfer arrangement in which a direction in which current flows between the inner circumference electrode and the outer circumference electrode is arranged perpendicular to a direction in which the skyrmion is transferred, and wherein one or more of the skyrmions are circularly transferred in the magnet with the closed-path pattern by applying current between the inner circumference electrode and the outer circumference electrode. a magnet with a closed-path pattern with a thin film shape capable of generating a skyrmion, wherein the magnet with the closed-path pattern has a width W and a length L in a plane of the thin film, and has a closed-path pattern that has both ends of the length L connected to each other and circularly transfers the skyrmion, characterized in that the magnet with the closed-path pattern includes: an inner circumference edge that defines an inner circumference of the magnet with the closed-path pattern in a plane of the closed-path pattern; and an outer circumference edge that defines an outer circumference, an inner circumference edge that defines an inner circumference of the magnet with the closed-path pattern in a plane of the closed-path pattern; and an outer circumference edge that defines an outer circumference, the skyrmion memory circuit includes, in a plane parallel to an extension direction of the magnet with the closed-path pattern: an inner circumference electrode made from a nonmagnetic metal connected to the inner circumference edge of the magnet with the closed-path pattern; and an outer circumference electrode made from a nonmagnetic metal connected to the outer circumference edge of the magnet with the closed-path pattern, and the skyrmion memory circuit has a lateral transfer arrangement in which a direction in which current flows between the inner circumference electrode and the outer circumference electrode is arranged perpendicular to a direction in which the skyrmion is transferred, and wherein an inner circumference electrode made from a nonmagnetic metal connected to the inner circumference edge of the magnet with the closed-path pattern; and an outer circumference electrode made from a nonmagnetic metal connected to the outer circumference edge of the magnet with the closed-path pattern, and the skyrmion memory circuit has a lateral transfer arrangement in which a direction in which current flows between the inner circumference electrode and the outer circumference electrode is arranged perpendicular to a direction in which the skyrmion is transferred, and wherein one or more of the skyrmions are circularly transferred in the magnet with the closed-path pattern by applying current between the inner circumference electrode and the outer circumference electrode.