A semiconductor light-emitting diode comprising: a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface; a second semiconductor layer selectively provided on the second major surface of the first semiconductor layer and including a light-emitting layer; an n-side electrode provided on a portion of the second major surface of the first semiconductor layer, the second semiconductor layer not provided on the portion; a p-side electrode provided on a surface of the second semiconductor layer opposite to a surface in contact with the first semiconductor layer; an insulating film covering the p-side electrode and the n-side electrode, the insulating film having a first opening which reaches the p-side electrode and a second opening which reaches the n-side electrode; a phosphor layer facing to the first major surface; a p-side interconnect provided on the insulating film and provided in the first opening, the p-side interconnect being connected to the p-side electrode an n-side interconnect (41,) provided on the insulating film and provided in the second opening, the n-side interconnect (41,) being connected to the n-side electrode; a light-blocking member (35,51,36,39) provided on a side surface of the first semiconductor layer and being opaque to light emitted from the light-emitting layer; an n-side metal pillar provided on the n-side interconnect; a p-side metal pillar provided on the p-side interconnect; and a sealing resin covering around the p-side metal pillar and the n-side metal pillar, wherein a planar size of the second semiconductor layer is smaller than a planar size of the first semiconductor layer, the n-side interconnect is electrically connected to the first semiconductor layer and the light-blocking member (35,36,39), the p-side interconnect is electrically connected to the second semiconductor layer, and a part of the sealing resin covers the side surface of the first semiconductor layer as the light-blocking member. a first semiconductor layer having a first major surface and a second major surface opposite to the first major surface; a second semiconductor layer selectively provided on the second major surface of the first semiconductor layer and including a light-emitting layer; an n-side electrode provided on a portion of the second major surface of the first semiconductor layer, the second semiconductor layer not provided on the portion; a p-side electrode provided on a surface of the second semiconductor layer opposite to a surface in contact with the first semiconductor layer; an insulating film covering the p-side electrode and the n-side electrode, the insulating film having a first opening which reaches the p-side electrode and a second opening which reaches the n-side electrode; a phosphor layer facing to the first major surface; a p-side interconnect provided on the insulating film and provided in the first opening, the p-side interconnect being connected to the p-side electrode an n-side interconnect (41,) provided on the insulating film and provided in the second opening, the n-side interconnect (41,) being connected to the n-side electrode; a light-blocking member (35,51,36,39) provided on a side surface of the first semiconductor layer and being opaque to light emitted from the light-emitting layer; an n-side metal pillar provided on the n-side interconnect; a p-side metal pillar provided on the p-side interconnect; and a sealing resin covering around the p-side metal pillar and the n-side metal pillar, wherein