A method of forming a multilayer structure, the method comprising: providing a single crystal semiconductor wafer, the single crystal semiconductor wafer comprising two major, parallel surfaces, one of which is the front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer, wherein the front surface of the single crystal semiconductor wafer is in interfacial contact with the back surface of a silicon nitride layer having a front surface and a back surface, contacting the front surface of the silicon nitride layer with (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen-containing vapor and performing low pressure chemical vapor deposition (LPCVD) at a pressure below 333 hPa (250 Torr) and at a temperature of at least 1000°C for a duration of between 15 minutes and 72 hours, followed by cooling to thereby directly deposit a hexagonal boron nitride layer in interfacial contact with the front surface of the silicon nitride layer to thereby prepare the multilayer structure comprising the hexagonal boron nitride layer, the silicon nitride layer, and the single crystal semiconductor wafer, and after direct deposition of the hexagonal boron nitride layer, forming a metal film on the hexagonal boron nitride layer, wherein the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further wherein the back metal film surface is in interfacial contact with the hexagonal boron nitride layer to thereby prepare the multilayer structure comprising the metal film, the hexagonal boron nitride layer, the silicon nitride layer, and the single crystal semiconductor wafer. providing a single crystal semiconductor wafer, the single crystal semiconductor wafer comprising two major, parallel surfaces, one of which is the front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer, wherein the front surface of the single crystal semiconductor wafer is in interfacial contact with the back surface of a silicon nitride layer having a front surface and a back surface, contacting the front surface of the silicon nitride layer with (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen-containing vapor and performing low pressure chemical vapor deposition (LPCVD) at a pressure below 333 hPa (250 Torr) and at a temperature of at least 1000°C for a duration of between 15 minutes and 72 hours, followed by cooling to thereby directly deposit a hexagonal boron nitride layer in interfacial contact with the front surface of the silicon nitride layer to thereby prepare the multilayer structure comprising the hexagonal boron nitride layer, the silicon nitride layer, and the single crystal semiconductor wafer, and (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or nitrogen-containing vapor after direct deposition of the hexagonal boron nitride layer, forming a metal film on the hexagonal boron nitride layer, wherein the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further wherein the back metal film surface is in interfacial contact with the hexagonal boron nitride layer to thereby prepare the multilayer structure comprising the metal film, the hexagonal boron nitride layer, the silicon nitride layer, and the single crystal semiconductor wafer.