A method of releasably attaching a semiconductor substrate to a carrier substrate comprising: (a) providing a semiconductor substrate having a front side and a back side, the front side having a copper surface; (b) providing a carrier substrate having an attachment surface; (c) disposing a temporary bonding composition comprising (i) a curable adhesive material chosen from polyarylene oligomers, cyclic-olefin oligomers, arylcyclobutene oligomers, vinyl aromatic oligomers, and mixtures thereof, (ii) a release additive chosen from polyether compounds, polyetheramine compounds, polyalkylene oxide homopolymers, polyalkylene oxide copolymers, and mixtures thereof, (iii) a copper passivation agent between the front side of the semiconductor substrate and the attachment surface of the carrier substrate, said copper passivation agent being chosen from 5-amino-1H-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 5-chlorobenzotriazole and methyl 1,2,3-benzotriazole-5-carboxylate, and (iv) one or more organic solvents for dissolving the curable adhesive material, the release additive, and the copper passivation agent, wherein the copper passivation agent is present at a level greater than 0.05% and equal to or lower than 10% by weight of the composition; and (d) curing the adhesive material to provide a temporary bonding layer disposed between the front side of the semiconductor substrate and the attachment surface of the carrier substrate, wherein the temporary bonding layer adjacent to the attachment surface of the carrier substrate comprises a relatively lower amount of the release additive and the temporary bonding layer adjacent to the front side of the semiconductor substrate comprises a relatively higher amount of the release additive. (a) providing a semiconductor substrate having a front side and a back side, the front side having a copper surface; (b) providing a carrier substrate having an attachment surface; (c) disposing a temporary bonding composition comprising (i) a curable adhesive material chosen from polyarylene oligomers, cyclic-olefin oligomers, arylcyclobutene oligomers, vinyl aromatic oligomers, and mixtures thereof, (ii) a release additive chosen from polyether compounds, polyetheramine compounds, polyalkylene oxide homopolymers, polyalkylene oxide copolymers, and mixtures thereof, (iii) a copper passivation agent between the front side of the semiconductor substrate and the attachment surface of the carrier substrate, said copper passivation agent being chosen from 5-amino-1H-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 5-chlorobenzotriazole and methyl 1,2,3-benzotriazole-5-carboxylate, and (iv) one or more organic solvents for dissolving the curable adhesive material, the release additive, and the copper passivation agent, wherein the copper passivation agent is present at a level greater than 0.05% and equal to or lower than 10% by weight of the composition; and (i) a curable adhesive material chosen from polyarylene oligomers, cyclic-olefin oligomers, arylcyclobutene oligomers, vinyl aromatic oligomers, and mixtures thereof, (ii) a release additive chosen from polyether compounds, polyetheramine compounds, polyalkylene oxide homopolymers, polyalkylene oxide copolymers, and mixtures thereof, (iii) a copper passivation agent between the front side of the semiconductor substrate and the attachment surface of the carrier substrate, said copper passivation agent being chosen from 5-amino-1H-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 5-chlorobenzotriazole and methyl 1,2,3-benzotriazole-5-carboxylate, and (iv) one or more organic solvents for dissolving the curable adhesive material, the release additive, and the copper passivation agent, wherein the copper passivation agent is present at a level greater than 0.05% and equal to or lower than 10% by weight of the composition; and (d) curing the adhesive material to provide a temporary bonding layer disposed between the front side of the semiconductor substrate and the attachment surface of the carrier substrate, wherein the temporary bonding layer adjacent to the attachment surface of the carrier substrate comprises a relatively lower amount of the release additive and the temporary bonding layer adjacent to the front side of the semiconductor substrate comprises a relatively higher amount of the release additive.