A light emitting device comprising: a support member (110; 210); a light emitting structure including a first semiconductor layer (120; 220) disposed on the support member, a second semiconductor layer (140; 240) and an active layer (130; 230) between the first semiconductor layer and the second semiconductor layer; a first electrode (170; 270) disposed on the first semiconductor layer (120; 220) in a first region through which the first semiconductor layer is exposed; a second electrode (180; 280) disposed on the second semiconductor layer (140; 240); an insulating layer (168; 268) disposed at least between the first electrode (170; 270) and the light emitting structure; a light transmitting electrode layer (150; 250) disposed between the second semiconductor layer (140; 240) and the second electrode (180; 280); and a reflective layer (160; 260) between the light transmitting electrode layer (150; 250) and the second electrode (180; 280), wherein the first semiconductor layer (120; 220) and the second semiconductor layer (140; 240) are different conductive semiconductor layers, the active layer (130; 230) includes at least one pair of a well layer and a barrier layer, and the well layer has a smaller band gap than the barrier layer, and wherein the second electrode (180; 280) is connected to the light transmitting electrode layer (150; 250) through an opening of the reflective layer (160; 260), characterized in that the reflective layer (160; 260) is formed from an upper surface of the second semiconductor layer (140; 240) to an upper surface of the first semiconductor layer (120; 220) along a lateral surface of the second semiconductor layer and a lateral surface of the active layer (130; 230), the light transmittable electrode layer 150 is in contact with the second semiconductor layer 140, the reflective layer 160 in contact with the light transmittable electrode layer 150, the second electrode 180 is in contact with the reflective layer 160, and the light transmittable electrode layer 150 and in that an area of an upper surface of the first electrode (170; 270) is in a range of 40% to 90% an area of the second semiconductor layer (140; 240). a support member (110; 210); a light emitting structure including a first semiconductor layer (120; 220) disposed on the support member, a second semiconductor layer (140; 240) and an active layer (130; 230) between the first semiconductor layer and the second semiconductor layer; a first electrode (170; 270) disposed on the first semiconductor layer (120; 220) in a first region through which the first semiconductor layer is exposed; a second electrode (180; 280) disposed on the second semiconductor layer (140; 240); an insulating layer (168; 268) disposed at least between the first electrode (170; 270) and the light emitting structure; a light transmitting electrode layer (150; 250) disposed between the second semiconductor layer (140; 240) and the second electrode (180; 280); and a reflective layer (160; 260) between the light transmitting electrode layer (150; 250) and the second electrode (180; 280), wherein the first semiconductor layer (120; 220) and the second semiconductor layer (140; 240) are different conductive semiconductor layers, the active layer (130; 230) includes at least one pair of a well layer and a barrier layer, and the well layer has a smaller band gap than the barrier layer, and wherein the second electrode (180; 280) is connected to the light transmitting electrode layer (150; 250) through an opening of the reflective layer (160; 260), characterized in that the reflective layer (160; 260) is formed from an upper surface of the second semiconductor layer (140; 240) to an upper surface of the first semiconductor layer (120; 220) along a lateral surface of the second semiconductor layer and a lateral surface of the active layer (130; 230), the light transmittable electrode layer 150 is in contact with the second semiconductor layer 140, the reflective layer 160 in contact with the light transmittable electrode layer 150, the second electrode 180 is in contact with the reflective layer 160, and the light transmittable electrode layer 150 and in that an area of an upper surface of the first electrode (170; 270) is in a range of 40% to 90% an area of the second semiconductor layer (140; 240).