a light emitting diode chip (100; 200; 200a), comprising: a substrate; a plurality of light emitting structures arranged on the substrate; each light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an alternating lamination bottom structure located under the substrate; the alternating lamination bottom structure comprising a plurality of dielectric pairs, each of the dielectric pairs comprising a first material layer comprising a first refractive index and a second material layer comprising a second refractive index, the first refractive index being greater than the second refractive index; the plurality of dielectric pairs comprising: a plurality of first dielectric pairs, comprising the first material layer and the second material layer, the first material layer and the second material layer each comprising an optical thickness less than λ/4; at least one second dielectric pair, each comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs, each comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4; further characterised in that λ is a central wavelength of 550 nm of the visible light range of 400 to 700 nm. a light emitting diode chip (100; 200; 200a), comprising: a substrate; a plurality of light emitting structures arranged on the substrate; each light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and an alternating lamination bottom structure located under the substrate; the alternating lamination bottom structure comprising a plurality of dielectric pairs, each of the dielectric pairs comprising a first material layer comprising a first refractive index and a second material layer comprising a second refractive index, the first refractive index being greater than the second refractive index; the plurality of dielectric pairs comprising: a plurality of first dielectric pairs, comprising the first material layer and the second material layer, the first material layer and the second material layer each comprising an optical thickness less than λ/4; at least one second dielectric pair, each comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs, each comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4; further characterised in that λ is a central wavelength of 550 nm of the visible light range of 400 to 700 nm. a plurality of first dielectric pairs, comprising the first material layer and the second material layer, the first material layer and the second material layer each comprising an optical thickness less than λ/4; at least one second dielectric pair, each comprising the first material layer and the second material layer, one of the first material layer and the second material layer comprising an optical thickness less than λ/4 and the other comprising an optical thickness greater than λ/4; and a plurality of third dielectric pairs, each comprising the first material layer and the second material layer, each of the first material layer and the second material layer comprising an optical thickness greater than λ/4; further characterised in that λ is a central wavelength of 550 nm of the visible light range of 400 to 700 nm.