An imaging device, comprising: a filter layer configured to selectively filter incident light according to wavelengths of the light; and a photoelectric conversion layer configured to receive light filtered by the filter layer and to produce an electric charge in response to the received light, wherein the filter layer includes: a first filter region corresponding to a first pixel of the imaging device, the first filter region having a first thickness and a plurality of through holes (302B; 352B) formed therein, wherein the first filter region transmits light incident on the first filter region with a first peak transmission wavelength; and a second filter region corresponding to a second pixel of the imaging device, the second filter region having a second thickness greater than the first thickness and having a plurality of through holes (302A; 352A) formed therein, wherein the second filter region transmits light incident on the second filter region with a second peak transmission wavelength that is greater than the first peak transmission wavelength, wherein the plurality of through holes (302B; 352B) formed in the first filter region have a first hole pitch, wherein the plurality of through holes (302A; 352A) formed in the second filter region have a second hole pitch, and wherein the second hole pitch is greater than the first hole pitch; and characterised in that the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated to be equal to ((hole pitch of through holes of the second filter region)-(hole pitch of through holes) of the first filter region): 2; or the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated as ((peak transmission wavelength through second pixel)-(peak transmission wavelength through first pixel)): 2. a filter layer configured to selectively filter incident light according to wavelengths of the light; and a photoelectric conversion layer configured to receive light filtered by the filter layer and to produce an electric charge in response to the received light, wherein the filter layer includes: a first filter region corresponding to a first pixel of the imaging device, the first filter region having a first thickness and a plurality of through holes (302B; 352B) formed therein, wherein the first filter region transmits light incident on the first filter region with a first peak transmission wavelength; and a second filter region corresponding to a second pixel of the imaging device, the second filter region having a second thickness greater than the first thickness and having a plurality of through holes (302A; 352A) formed therein, wherein the second filter region transmits light incident on the second filter region with a second peak transmission wavelength that is greater than the first peak transmission wavelength, wherein the plurality of through holes (302B; 352B) formed in the first filter region have a first hole pitch, wherein the plurality of through holes (302A; 352A) formed in the second filter region have a second hole pitch, and wherein the second hole pitch is greater than the first hole pitch; and characterised in that the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated to be equal to ((hole pitch of through holes of the second filter region)-(hole pitch of through holes) of the first filter region): 2; or the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated as ((peak transmission wavelength through second pixel)-(peak transmission wavelength through first pixel)): 2. a first filter region corresponding to a first pixel of the imaging device, the first filter region having a first thickness and a plurality of through holes (302B; 352B) formed therein, wherein the first filter region transmits light incident on the first filter region with a first peak transmission wavelength; and a second filter region corresponding to a second pixel of the imaging device, the second filter region having a second thickness greater than the first thickness and having a plurality of through holes (302A; 352A) formed therein, wherein the second filter region transmits light incident on the second filter region with a second peak transmission wavelength that is greater than the first peak transmission wavelength, wherein the plurality of through holes (302B; 352B) formed in the first filter region have a first hole pitch, wherein the plurality of through holes (302A; 352A) formed in the second filter region have a second hole pitch, and wherein the second hole pitch is greater than the first hole pitch; and characterised in that the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated to be equal to ((hole pitch of through holes of the second filter region)-(hole pitch of through holes) of the first filter region): 2; or the difference between the second thickness of the second filter region and the first thickness of the first filter region is calculated as ((peak transmission wavelength through second pixel)-(peak transmission wavelength through first pixel)): 2.