Method of manufacturing a semiconductor device which comprises the following features: a first line layer having a first line; a first interlayer film formed on the first line layer; a second line layer that is formed on the first interlayer film, and that has a second line; a first semiconductor element provided inside the first interlayer film; a second interlayer film formed on the second line layer; a second semiconductor element that is provided inside the second interlayer film, and that is disposed to face the first semiconductor element; a third line layer that is formed on the second interlayer film, and that has a third line; a first connection metal member that electrically connects the first line to a main electrode formed on a lower surface of the first semiconductor element; a second connection metal member that electrically connects the second line to a main electrode formed on an upper surface of the first semiconductor element; a third connection metal member that electrically connects the second line to a main electrode formed on a lower surface of the second semiconductor element; a fourth connection metal member that electrically connects the third line to a main electrode formed on an upper surface of the second semiconductor element; and a fifth connection metal member (37, 38) that is disposed at a region located outside regions of the first and second semiconductor elements (Tr1, Tr2) in a plan view, the fifth connection metal member (37, 38) connecting the first line to the second line or connecting the second line to the third line, wherein a cross-sectional area of each of the first connection metal member, the second connection metal member, the third connection metal member and the fourth connection metal member is larger than a cross-sectional area of the fifth connection metal member (37, 38), characterised in that the semiconductor device is manufactured by stacking a plurality of sheet members (S1 to S8) on which predetermined processing is performed in advance, in a manner such that the first and second semiconductor elements (Tr1, Tr2) are provided inside the sheet members (S1 to S8), and hot-pressing the sheet members (S1 to S8) together. a first line layer having a first line; a first interlayer film formed on the first line layer; a second line layer that is formed on the first interlayer film, and that has a second line; a first semiconductor element provided inside the first interlayer film; a second interlayer film formed on the second line layer; a second semiconductor element that is provided inside the second interlayer film, and that is disposed to face the first semiconductor element; a third line layer that is formed on the second interlayer film, and that has a third line; a first connection metal member that electrically connects the first line to a main electrode formed on a lower surface of the first semiconductor element; a second connection metal member that electrically connects the second line to a main electrode formed on an upper surface of the first semiconductor element; a third connection metal member that electrically connects the second line to a main electrode formed on a lower surface of the second semiconductor element; a fourth connection metal member that electrically connects the third line to a main electrode formed on an upper surface of the second semiconductor element; and a fifth connection metal member (37, 38) that is disposed at a region located outside regions of the first and second semiconductor elements (Tr1, Tr2) in a plan view, the fifth connection metal member (37, 38) connecting the first line to the second line or connecting the second line to the third line, wherein a cross-sectional area of each of the first connection metal member, the second connection metal member, the third connection metal member and the fourth connection metal member is larger than a cross-sectional area of the fifth connection metal member (37, 38), characterised in that the semiconductor device is manufactured by stacking a plurality of sheet members (S1 to S8) on which predetermined processing is performed in advance, in a manner such that the first and second semiconductor elements (Tr1, Tr2) are provided inside the sheet members (S1 to S8), and hot-pressing the sheet members (S1 to S8) together.