A light emitting device comprising: a light emitting structure comprising a first semiconductor layer doped with a first dopant while comprising a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers (222, 224); a first electrode disposed on the first region of the first semiconductor layer; a second electrode disposed over the second semiconductor layer; a light transmitting electrode layer disposed between the second semiconductor layer and the second electrode; and a functional member disposed between one side surface of the light emitting structure and the first electrode, wherein the functional member has a height greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a thickness direction of the light emitting structure, wherein the functional member includes a first functional member made of a conductive material and a second functional member having insulation properties, wherein the light transmitting electrode layer is disposed so that an outer peripheral portion of the second semiconductor layer is exposed and the second functional member is disposed at the exposed outer peripheral portion of the second semiconductor layer, wherein the second functional member is disposed at a side surface of the light emitting structure and a portion of an upper surface of the light transmitting electrode layer, characterised in that the first electrode contacts an inner side of the first functional member, said inner side being disposed between the first semiconductor layer and the first electrode, the first functional member is disposed at the first region of the first semiconductor layer and a side surface of the second functional member, and the first electrode has a trench structure with a concave center portion, a top surface of the first electrode being aligned with a top surface of the first functional member and with a top surface of the second functional member. a light emitting structure comprising a first semiconductor layer doped with a first dopant while comprising a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers (222, 224); a first electrode disposed on the first region of the first semiconductor layer; a second electrode disposed over the second semiconductor layer; a light transmitting electrode layer disposed between the second semiconductor layer and the second electrode; and a functional member disposed between one side surface of the light emitting structure and the first electrode, wherein the functional member has a height greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a thickness direction of the light emitting structure, wherein the functional member includes a first functional member made of a conductive material and a second functional member having insulation properties, wherein the light transmitting electrode layer is disposed so that an outer peripheral portion of the second semiconductor layer is exposed and the second functional member is disposed at the exposed outer peripheral portion of the second semiconductor layer, wherein the second functional member is disposed at a side surface of the light emitting structure and a portion of an upper surface of the light transmitting electrode layer, characterised in that the first electrode contacts an inner side of the first functional member, said inner side being disposed between the first semiconductor layer and the first electrode, the first functional member is disposed at the first region of the first semiconductor layer and a side surface of the second functional member, and the first electrode has a trench structure with a concave center portion, a top surface of the first electrode being aligned with a top surface of the first functional member and with a top surface of the second functional member.