A semiconductor light emitting device, comprising: a conductive supporting member; a second electrode layer disposed on the conductive supporting member; a light emitting structure disposed on the second electrode layer and comprising a second conductive semiconductor layer, an active layer disposed on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; a first electrode disposed on the light emitting structure; a first insulating layer (140, 140A) disposed along an outer circumference region between the second conductive semiconductor layer and the second electrode layer; and a metal layer comprising a connection pattern connected to the first electrode and a loop pattern connected to the connection pattern, wherein the first insulating layer (140, 140A) is sandwiched by and contacts a peripheral part of the second electrode layer and a peripheral part of the second conductive semiconductor layer, wherein the loop pattern of the metal layer is disposed on a top circumference of the first insulating layer (140,140A), wherein the connection pattern of the metal layer is connected to the first electrode on the first conductive semiconductor layer of the light emitting structure, wherein the first insulating layer (140, 140A) comprises a protrusion (145, 145A, 145B) contacted with the first conductive semiconductor layer, and wherein the protrusion (145, 145A, 145B) protrudes from the upper surface of the first insulating layer (140, 140A) and extends through the second conductive semiconductor layer to the first conductive semiconductor layer via the active layer. a conductive supporting member; a second electrode layer disposed on the conductive supporting member; a light emitting structure disposed on the second electrode layer and comprising a second conductive semiconductor layer, an active layer disposed on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; a first electrode disposed on the light emitting structure; a first insulating layer (140, 140A) disposed along an outer circumference region between the second conductive semiconductor layer and the second electrode layer; and a metal layer comprising a connection pattern connected to the first electrode and a loop pattern connected to the connection pattern, wherein the first insulating layer (140, 140A) is sandwiched by and contacts a peripheral part of the second electrode layer and a peripheral part of the second conductive semiconductor layer, wherein the loop pattern of the metal layer is disposed on a top circumference of the first insulating layer (140,140A), wherein the connection pattern of the metal layer is connected to the first electrode on the first conductive semiconductor layer of the light emitting structure, wherein the first insulating layer (140, 140A) comprises a protrusion (145, 145A, 145B) contacted with the first conductive semiconductor layer, and wherein the protrusion (145, 145A, 145B) protrudes from the upper surface of the first insulating layer (140, 140A) and extends through the second conductive semiconductor layer to the first conductive semiconductor layer via the active layer.