A display device, comprising: a plurality of semiconductor light emitting devices (2050, 3050) mounted on a substrate; and a phosphor layer (2080, 3080) including a plurality of phosphor portions (2084, 3084) configured to convert a wavelength of light and a plurality of partition wall portions (2085, 3085) formed between the plurality of phosphor portions (2084, 3084), wherein a least one of the plurality of partition wall portions (2085, 3085) vertically overlaps with at least one of the plurality of semiconductor light emitting devices (2050, 3050) along a thickness direction of the phosphor layer (2080, 3080), and the plurality of partition wall portions (2085, 3085) comprise a first partition wall portion disposed between the plurality of semiconductor light emitting devices and a second partition wall portion configured to vertically cover the at least one of the plurality of semiconductor light emitting devices, characterized in that at least one of the plurality of partition wall portions (2085, 3085) comprises one or more metal thin films (2088, 3088) formed at an edge thereof, and a light transmitting material (2089, LT) is filled between the metal thin films, wherein at least one of the plurality of partition wall portions comprises: a base portion extended along a first direction; and a protrusion portion protruded in a second direction perpendicular to the first direction from an end portion of the base portion, wherein one phosphor portion with the same color is formed along the first direction and red, green and blue pixels are sequentially disposed along the second direction. a plurality of semiconductor light emitting devices (2050, 3050) mounted on a substrate; and a phosphor layer (2080, 3080) including a plurality of phosphor portions (2084, 3084) configured to convert a wavelength of light and a plurality of partition wall portions (2085, 3085) formed between the plurality of phosphor portions (2084, 3084), wherein a least one of the plurality of partition wall portions (2085, 3085) vertically overlaps with at least one of the plurality of semiconductor light emitting devices (2050, 3050) along a thickness direction of the phosphor layer (2080, 3080), and the plurality of partition wall portions (2085, 3085) comprise a first partition wall portion disposed between the plurality of semiconductor light emitting devices and a second partition wall portion configured to vertically cover the at least one of the plurality of semiconductor light emitting devices, characterized in that at least one of the plurality of partition wall portions (2085, 3085) comprises one or more metal thin films (2088, 3088) formed at an edge thereof, and a light transmitting material (2089, LT) is filled between the metal thin films, wherein at least one of the plurality of partition wall portions comprises: a base portion extended along a first direction; and a protrusion portion protruded in a second direction perpendicular to the first direction from an end portion of the base portion, wherein one phosphor portion with the same color is formed along the first direction and red, green and blue pixels are sequentially disposed along the second direction. a base portion extended along a first direction; and a protrusion portion protruded in a second direction perpendicular to the first direction from an end portion of the base portion, wherein one phosphor portion with the same color is formed along the first direction and red, green and blue pixels are sequentially disposed along the second direction.