mhurhangee/ep-ind-claims huggingface dataset:
A method for uplink power control at a mobile station which is served by a base station of a Long Term Evolution, LTE, communications network comprising a plurality of base stations, wherein the power spectrum density of said mobile station is adaptable based on the bandwidth scheduled to said mobile station, said method being characterized in that the power spectrum density of said mobile station is increased adapted in case the bandwidth scheduled to said mobile station is below a predefined minimum bandwidth, M min, wherein M min < 10 Resource Blocks, RBs.
A disaggregated computing platform, comprising: a plurality of unassigned physical computing components; a management processor configured to receive user commands to establish compute units (160, 740) from among the plurality of unassigned physical computing components, and configured to select and assign one or more of the unassigned plurality of physical computing components to each of the compute units (160, 740), the plurality of unassigned physical computing components selected from among central processing units, graphics processing units, storage modules, and network interface modules; a Peripheral Component Interconnect Express fabric (151, 720) configured to communicatively couple the plurality of physical computing components assigned to form each of the compute units (160, 740) and to isolate each of the compute units (160, 740) from one or more other of the compute units using logical partitioning within the Peripheral Component Interconnect Express fabric, wherein the management processor is further configured to control configuration settings of the Peripheral Component Interconnect Express fabric to establish the logical partitioning, and wherein each of the compute units (160, 740) has visibility over the Peripheral Component Interconnect Express fabric to only the plurality of physical computing components assigned to the compute unit (160, 740) using the logical partitioning within the Peripheral Component Interconnect Express fabric. a plurality of unassigned physical computing components; a management processor configured to receive user commands to establish compute units (160, 740) from among the plurality of unassigned physical computing components, and configured to select and assign one or more of the unassigned plurality of physical computing components to each of the compute units (160, 740), the plurality of unassigned physical computing components selected from among central processing units, graphics processing units, storage modules, and network interface modules; a Peripheral Component Interconnect Express fabric (151, 720) configured to communicatively couple the plurality of physical computing components assigned to form each of the compute units (160, 740) and to isolate each of the compute units (160, 740) from one or more other of the compute units using logical partitioning within the Peripheral Component Interconnect Express fabric, wherein the management processor is further configured to control configuration settings of the Peripheral Component Interconnect Express fabric to establish the logical partitioning, and wherein each of the compute units (160, 740) has visibility over the Peripheral Component Interconnect Express fabric to only the plurality of physical computing components assigned to the compute unit (160, 740) using the logical partitioning within the Peripheral Component Interconnect Express fabric.
Signaling system, comprising a signaling device, an analog selection device and a range scale, wherein the signaling device has been set up to generate a selection signal by means of the analog selection device for choosing a signal range, and the range scale is set up for indicating the signal range chosen by the analog selection device, characterized in that the range scale exhibits at least two setting ranges and at least one transition range, a setting range of the at least two setting ranges being arranged in each instance alternating with, in each instance, a transition range of the at least one transition range along an extent of the range scale, and the analog selection device is arranged in such a way that a selection of a setting range or of a transition range takes place along the extent of the range scale and in the process the analog selection device establishes an analog selection value, and the signaling device has further been set up to capture the analog selection value with the aid of the selection signal and to check whether this value corresponds to a value that has been assigned to a transition range, and, if appropriate, to output a signal by an included signaling means. and the analog selection device is arranged in such a way that a selection of a setting range or of a transition range takes place along the extent of the range scale and in the process the analog selection device establishes an analog selection value, and the signaling device has further been set up to capture the analog selection value with the aid of the selection signal and to check whether this value corresponds to a value that has been assigned to a transition range, and, if appropriate, to output a signal by an included signaling means.
A method for detecting malfunctions in a combustion chamber of a gas turbine plant having a plurality of burners, the method comprising: providing dynamic pressure signals (P1, PS,..., PN) each indicative of a dynamic pressure at a respective burner; identifying each burner subject to malfunctioning on the basis of a bijective correlation between the burners and the respective dynamic pressure signals (P 1, P 2,..., P N); characterized by: calculating frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)) of the dynamic pressure signals (P 1, P 2,..., P N); recognizing malfunctions of the burners according to the frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)). providing dynamic pressure signals (P1, PS,..., PN) each indicative of a dynamic pressure at a respective burner; identifying each burner subject to malfunctioning on the basis of a bijective correlation between the burners and the respective dynamic pressure signals (P 1, P 2,..., P N); characterized by: calculating frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)) of the dynamic pressure signals (P 1, P 2,..., P N); recognizing malfunctions of the burners according to the frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)). calculating frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)) of the dynamic pressure signals (P 1, P 2,..., P N); recognizing malfunctions of the burners according to the frequency spectra (S 1 (f), S 2 (f),..., S N (f), S 1 *(f), S 2 *(f),..., S N *(f)).
Process for preparing 3-hydroxy-3-methylbutyric acid or a salt thereof, the process comprising (a) reacting isobutylene oxide with cyanide in orderto obtain 3-hydroxy-3-methylbutyronitrile, and (b) hydrolyzing the 3-hydroxy-3-methylbutyronitrile obtained in step (a) in order to obtain HMB, wherein hydrolysis step (b) is performed using either at least one nitrilase enzyme or, alternatively, using a combination of enzymes, said combination comprising at least one nitrile hydratase and at least one amidase. (a) reacting isobutylene oxide with cyanide in orderto obtain 3-hydroxy-3-methylbutyronitrile, and (b) hydrolyzing the 3-hydroxy-3-methylbutyronitrile obtained in step (a) in order to obtain HMB,
A process for the thermal deposition coating of a workpiece, said process comprising the steps of: (a) thermally depositing material on a thermally conductive surface of a workpiece from a deposition head (6; 44) supplying a cryogenic coolant from a coolant supply to the surface of the workpiece; wherein the cryogenic coolant flow rate onto said workpiece is controllable; (b) substantially simultaneously measuring temperatures at a plurality of locations over the surface of the workpiece; (c) determining an average temperature of the temperatures measured in step (b); (d) comparing the average temperature to a preselected minimum temperature and a preselected maximum temperature for the workpiece; and (e) automatically adjusting the cryogenic coolant flow rate onto the workpiece, if said average temperature is not between the preselected minimum temperature and the preselected maximum temperature for the workpiece. (a) thermally depositing material on a thermally conductive surface of a workpiece from a deposition head (6; 44) supplying a cryogenic coolant from a coolant supply to the surface of the workpiece; wherein the cryogenic coolant flow rate onto said workpiece is controllable; (b) substantially simultaneously measuring temperatures at a plurality of locations over the surface of the workpiece; (c) determining an average temperature of the temperatures measured in step (b); (d) comparing the average temperature to a preselected minimum temperature and a preselected maximum temperature for the workpiece; and (e) automatically adjusting the cryogenic coolant flow rate onto the workpiece, if said average temperature is not between the preselected minimum temperature and the preselected maximum temperature for the workpiece.
A surface cleaning apparatus (10, 210), comprising: a two-stage collection system, comprising: a mechanical collection stage comprising an agitator (30, 246) rotatably driven about a rotational axis, characterized in that the mechanical collection stage also includes a scraper (52, 284) interfacing with a first portion (64, 322) of the agitator (30, 246), and a first collection area (44, 274) configured to collect debris and liquid mechanically propelled into the first collection area (44, 274) by the agitator (30, 246) and mechanically scraped off the agitator (30, 246) by the scraper (52, 284); and a suction collection stage comprising a suction nozzle (88, 310) proximate the agitator (30, 246) and a suction source (90, 312) in fluid communication with the suction nozzle (88, 310) to recover debris and liquid on the agitator (30, 246) in a second collection area (48, 278) wherein the suction nozzle (88, 310) confronts a second portion (97, 320) of the agitator (30, 246), the second portion (97, 320) of the agitator (30, 246) being disposed past the first portion (64, 322) of the agitator (30, 246) in a direction of rotation of the agitator (30, 246) about the rotational axis. a mechanical collection stage comprising an agitator (30, 246) rotatably driven about a rotational axis, characterized in that the mechanical collection stage also includes a scraper (52, 284) interfacing with a first portion (64, 322) of the agitator (30, 246), and a first collection area (44, 274) configured to collect debris and liquid mechanically propelled into the first collection area (44, 274) by the agitator (30, 246) and mechanically scraped off the agitator (30, 246) by the scraper (52, 284); and a suction collection stage comprising a suction nozzle (88, 310) proximate the agitator (30, 246) and a suction source (90, 312) in fluid communication with the suction nozzle (88, 310) to recover debris and liquid on the agitator (30, 246) in a second collection area (48, 278) wherein the suction nozzle (88, 310) confronts a second portion (97, 320) of the agitator (30, 246), the second portion (97, 320) of the agitator (30, 246) being disposed past the first portion (64, 322) of the agitator (30, 246) in a direction of rotation of the agitator (30, 246) about the rotational axis.
An assembly for rotational equipment with an axial centerline, the assembly comprising: a primary seal device configured as a hydrostatic non-contact seal device, the primary seal device including a plurality of seal shoes and a seal base, the seal shoes arranged circumferentially about the axial centerline in an annular array, and the seal base circumscribing the annular array of the seal shoes; a ring structure axially engaged with the seal base; and a secondary seal device mounted with the ring structure, the secondary seal device including a seal ring body, the seal ring body configured to substantially seal an annular gap between the ring structure and the seal base, characterised in that: the secondary seal device includes an alignment tab projecting out from the seal ring body and into an aperture in the ring structure, wherein the alignment tab is adapted to substantially rotationally locate the secondary seal device to the ring structure, wherein: the alignment tab is a first alignment tab; the aperture is a first aperture; the secondary seal device further includes a second alignment tab that projects out from the seal ring body and into a second aperture in the ring structure; the second alignment tab is adapted to substantially rotationally locate the secondary seal device to the ring structure; and the first alignment tab and the second alignment tab are arranged non-uniformly about the seal ring body. a primary seal device configured as a hydrostatic non-contact seal device, the primary seal device including a plurality of seal shoes and a seal base, the seal shoes arranged circumferentially about the axial centerline in an annular array, and the seal base circumscribing the annular array of the seal shoes; a ring structure axially engaged with the seal base; and a secondary seal device mounted with the ring structure, the secondary seal device including a seal ring body, the seal ring body configured to substantially seal an annular gap between the ring structure and the seal base, the alignment tab is a first alignment tab; the aperture is a first aperture; the secondary seal device further includes a second alignment tab that projects out from the seal ring body and into a second aperture in the ring structure; the second alignment tab is adapted to substantially rotationally locate the secondary seal device to the ring structure; and the first alignment tab and the second alignment tab are arranged non-uniformly about the seal ring body.
A method of fabricating a semi-insulating Group III nitride semiconductor layer, comprising: doping (100, 200) a Group III nitride layer with a shallow level p-type dopant having a concentration of less than 1x10 17 cm -3 and having an acceptor energy level that is within 0.3eV of a valence band of the Group III nitride layer; and doping (110, 210) the Group III nitride layer with a deep level transition metal dopant having a donor-like energy level that is more than 0.5 eV from a conduction band of the Group III nitride layer and an acceptor-like energy level that is more than 0.5eV from a valence band of the Group III nitride layer, wherein the concentration of the deep level dopant is at least three times greater than the concentration of the shallow level p-type dopant, wherein the concentration of the shallow level p-type dopant is sufficiently great such that the position of a Fermi level of the Group III nitride layer is controlled by the shallow level p-type dopant in the absence of the deep level transition metal dopant, and wherein the donor-like energy level of the deep level transition metal dopant is a dominant energy level of the deep level transition metal dopant to cause the Fermi level of the Group III nitride layer to be pinned at a level associated with the deep level transition metal dopant. doping (100, 200) a Group III nitride layer with a shallow level p-type dopant having a concentration of less than 1x10 17 cm -3 and having an acceptor energy level that is within 0.3eV of a valence band of the Group III nitride layer; and doping (110, 210) the Group III nitride layer with a deep level transition metal dopant having a donor-like energy level that is more than 0.5 eV from a conduction band of the Group III nitride layer and an acceptor-like energy level that is more than 0.5eV from a valence band of the Group III nitride layer, wherein the concentration of the deep level dopant is at least three times greater than the concentration of the shallow level p-type dopant, wherein the concentration of the shallow level p-type dopant is sufficiently great such that the position of a Fermi level of the Group III nitride layer is controlled by the shallow level p-type dopant in the absence of the deep level transition metal dopant, and wherein the donor-like energy level of the deep level transition metal dopant is a dominant energy level of the deep level transition metal dopant to cause the Fermi level of the Group III nitride layer to be pinned at a level associated with the deep level transition metal dopant.
A ship comprising: a hull having a pair of broadsides (3A, 3B); a tank that is provided in the hull and is capable of storing liquefied carbon dioxide; and a loading pipe that loads liquefied carbon dioxide that is supplied from an outside of the ship into the tank, wherein the loading pipe includes a transport pipe having a connection part for connection with the outside of the ship, an upper loading pipe that branches off and extends from the transport pipe and is open to an upper portion in the tank, a lower loading pipe that branches off and extends from the transport pipe and is open to a lower portion in the tank, a first on-off valve provided in the upper loading pipe, a second on-off valve provided in the lower loading pipe, a spray pipe that branches off from the transport pipe to reach inside the tank and has a plurality of injection holes disposed on a lower side with respect to an opening of the upper loading pipe and on an upper side with respect to an opening of the lower loading pipe, and an on-off valve provided in the spray pipe. a hull having a pair of broadsides (3A, 3B); a tank that is provided in the hull and is capable of storing liquefied carbon dioxide; and a loading pipe that loads liquefied carbon dioxide that is supplied from an outside of the ship into the tank, wherein the loading pipe includes a transport pipe having a connection part for connection with the outside of the ship, an upper loading pipe that branches off and extends from the transport pipe and is open to an upper portion in the tank, a lower loading pipe that branches off and extends from the transport pipe and is open to a lower portion in the tank, a first on-off valve provided in the upper loading pipe, a second on-off valve provided in the lower loading pipe, a spray pipe that branches off from the transport pipe to reach inside the tank and has a plurality of injection holes disposed on a lower side with respect to an opening of the upper loading pipe and on an upper side with respect to an opening of the lower loading pipe, and an on-off valve provided in the spray pipe. a transport pipe having a connection part for connection with the outside of the ship, an upper loading pipe that branches off and extends from the transport pipe and is open to an upper portion in the tank, a lower loading pipe that branches off and extends from the transport pipe and is open to a lower portion in the tank, a first on-off valve provided in the upper loading pipe, a second on-off valve provided in the lower loading pipe, a spray pipe that branches off from the transport pipe to reach inside the tank and has a plurality of injection holes disposed on a lower side with respect to an opening of the upper loading pipe and on an upper side with respect to an opening of the lower loading pipe, and an on-off valve provided in the spray pipe.
A random copolymer composition for use in treating an autoimmune disease mediated by T H 1 cells, wherein the random copolymer composition comprises random copolymers consisting of amino acid residues YFAK (L-tyrosine, L-phenylalanine, L-alanine and L-lysine) in a molar output ratio of about 1.0: 1.2: 20.0<30.0: 6.0 respectively, wherein the variability in the output ratio comprises a range of 10% between the different amino acid residues, and the length of the copolymer is between 35 and 75 amino acid residues, wherein the composition is to be delivered subcutaneously to a subject in two or more doses, each dose separated by a time interval of at least 7 days, thereby inducing a T H 2 biased immune response.
A power switching circuit, comprising: a bandgap reference circuit configured to receive an input voltage (VOUT) and to generate a reference voltage (VREF) in response to receiving said input voltage; a supply selection circuit (302, 500) configured to receive at least two supply voltages (VDDI, VDDA), to select the highest voltage of said supply voltages and to provide said highest voltage to the bandgap reference circuit. a bandgap reference circuit configured to receive an input voltage (VOUT) and to generate a reference voltage (VREF) in response to receiving said input voltage; a supply selection circuit (302, 500) configured to receive at least two supply voltages (VDDI, VDDA), to select the highest voltage of said supply voltages and to provide said highest voltage to the bandgap reference circuit.
A LED strip, comprising a plurality of LEDs mounted on a LED mounting surface of a flat, flexible substrate, wherein said LED mounting surface is light reflective, wherein said flexible substrate is shaped to form at least one conical structure, and a subset of said plurality of LEDs is located inside at least one of the at least one conical structure, wherein said conical structure includes a first LED strip portion and a second LED strip portion, said first and second LED strip portions being joined by a conically curved LED strip portion, such that said first and second LED strip portions intersect each other adjacent to the curved LED strip portion.
A method for manufacturing a panel-shaped or profiled construction element that can be used particularly as a wall, ceiling or floor element, using a homogeneous mixture of expanded glass granulate and an inorganic or organic binder, characterized in that the method comprises at least the following steps: - Introducing a part of the homogeneous mixture of expanded glass granulate and binder into a mould, or into an aid device if the method is being executed without moulds, particularly in continuous production, - Forming a layer of polystyrene, by applying a polystyrene panel or applying a bed of polystyrene balls to the homogeneous mixture, - Distributing the remaining part of the homogeneous mixture over the polystyrene layer, - Compacting by pressing and curing to form a panel-shaped or profiled component with the action of heat at a temperature of ≥90 °C, wherein the maximum temperature is between 100 °C and 120 °C, preferably between 100 °C and 110 °C. - Introducing a part of the homogeneous mixture of expanded glass granulate and binder into a mould, or into an aid device if the method is being executed without moulds, particularly in continuous production, - Forming a layer of polystyrene, by applying a polystyrene panel or applying a bed of polystyrene balls to the homogeneous mixture, - Distributing the remaining part of the homogeneous mixture over the polystyrene layer, - Compacting by pressing and curing to form a panel-shaped or profiled component with the action of heat at a temperature of ≥90 °C, wherein the maximum temperature is between 100 °C and 120 °C, preferably between 100 °C and 110 °C.