A manufacturing method of a silicon solar cell, comprising: (a) preparing a silicon semiconductor substrate doped with a first conductive impurity; (b) forming an emitter layer on the substrate by doping an upper portion of the substrate with a second conductive impurity having the opposite polarity to the first conductive impurity; (c) forming an etching mask pattern by screen-printing a paste containing inorganic powder, an organic solvent, a binder resin, and a plasticizer at a front electrode connection area on the emitter layer; (d) etching back a dead layer formed at an uppermost portion of the emitter layer by using the etching mask pattern as a mask, wherein the dead layer has a concentration of the second conductive type impurity doped therein that is higher than a solid solubility in the silicon semiconductor; (e) removing the etching mask pattern remaining after the etch-back; (f) forming an anti-reflection film over a front surface of the substrate; (g) establishing a connection between a front electrode and the front electrode connection area through the anti-reflection film; and (h) establishing a connection between a rear electrode and a rear surface of the substrate, wherein the inorganic powder comprises glass frit powder selected from SiO 2 - PbO based powder, SiO 2 -PbO-B 2 O 3 based powder, Bi 2 O 3 -B 2 O 3 -SiO 2 based powder, and PbO-Bi 2 O 3 -B 2 O 3 -SiO 2 based powder; metal oxide powder selected from SiO 2, TiO 2, P 2 O 5, BaO, ZnO, ITO, and Al 2 C 3; or mixtures thereof, and the plasticizer is any one selected from the group consisting of phthalic acid ester, benzoic acid ester, phosphoric acid ester, trimellitic acid ester, polyester, citric acid ester, adipic acid ester, and epoxy compound, or mixtures thereof and the content of the plasticizer is 0.01 to 30 parts by weight per 100 parts by weight of the paste composition. (a) preparing a silicon semiconductor substrate doped with a first conductive impurity; (b) forming an emitter layer on the substrate by doping an upper portion of the substrate with a second conductive impurity having the opposite polarity to the first conductive impurity; (c) forming an etching mask pattern by screen-printing a paste containing inorganic powder, an organic solvent, a binder resin, and a plasticizer at a front electrode connection area on the emitter layer; (d) etching back a dead layer formed at an uppermost portion of the emitter layer by using the etching mask pattern as a mask, wherein the dead layer has a concentration of the second conductive type impurity doped therein that is higher than a solid solubility in the silicon semiconductor; (e) removing the etching mask pattern remaining after the etch-back; (f) forming an anti-reflection film over a front surface of the substrate; (g) establishing a connection between a front electrode and the front electrode connection area through the anti-reflection film; and (h) establishing a connection between a rear electrode and a rear surface of the substrate, wherein the inorganic powder comprises glass frit powder selected from SiO 2 - PbO based powder, SiO 2 -PbO-B 2 O 3 based powder, Bi 2 O 3 -B 2 O 3 -SiO 2 based powder, and PbO-Bi 2 O 3 -B 2 O 3 -SiO 2 based powder; metal oxide powder selected from SiO 2, TiO 2, P 2 O 5, BaO, ZnO, ITO, and Al 2 C 3; or mixtures thereof, and the plasticizer is any one selected from the group consisting of phthalic acid ester, benzoic acid ester, phosphoric acid ester, trimellitic acid ester, polyester, citric acid ester, adipic acid ester, and epoxy compound, or mixtures thereof and the content of the plasticizer is 0.01 to 30 parts by weight per 100 parts by weight of the paste composition.