A manufacturing method of a silicon single crystal by the Czochralski method in which a silicon melt is formed by heating a raw material filled in a vitreous silica crucible and a seed crystal dipped in the silicon melt is pulled up, thereby growing a silicon single crystal, the manufacturing method being characterized by: measuring spatial coordinates of a number of points on an inner surface of a vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and specifying a three-dimensional shape of the inner surface of the vitreous silica crucible using a combination of polygons having vertex coordinates constituted by the respective measured points; presetting a predictive value of an initial liquid surface level of a silicon melt in the vitreous silica crucible; obtaining a volume of the silicon melt which satisfies the predictive value of the initial liquid surface level based on the three-dimensional shape of the inner surface of the vitreous silica crucible; obtaining a weight of the silicon melt having the volume; filling the raw material having the weight in the vitreous silica crucible; and performing a dipping control of a seed crystal based on the predictive value of the initial liquid surface level, characterized in that the manufacturing method further comprises a multi-pulling process in which a subsequent pulling of a silicon single crystal is performed by adding raw material in the vitreous silica crucible after the previous pulling of the silicon single crystal is completed, wherein a residual amount of the silicon melt remaining in the vitreous silica crucible is obtained from a weight of the silicon single crystal which is pulled previously, and an additional filling amount of the raw material which satisfies the predictive value of the initial liquid surface level of the silicon melt used in the subsequent pulling of the silicon single crystal is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible and the residual amount of the silicon melt, wherein the additional filling amount of the raw material is adjusted so that the initial liquid surface level at the time of the subsequent pulling of the silicon single crystal is lower than the initial liquid surface level at the time of the previous pulling of the silicon single crystal. measuring spatial coordinates of a number of points on an inner surface of a vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and specifying a three-dimensional shape of the inner surface of the vitreous silica crucible using a combination of polygons having vertex coordinates constituted by the respective measured points; presetting a predictive value of an initial liquid surface level of a silicon melt in the vitreous silica crucible; obtaining a volume of the silicon melt which satisfies the predictive value of the initial liquid surface level based on the three-dimensional shape of the inner surface of the vitreous silica crucible; obtaining a weight of the silicon melt having the volume; filling the raw material having the weight in the vitreous silica crucible; and performing a dipping control of a seed crystal based on the predictive value of the initial liquid surface level, characterized in that the manufacturing method further comprises a multi-pulling process in which a subsequent pulling of a silicon single crystal is performed by adding raw material in the vitreous silica crucible after the previous pulling of the silicon single crystal is completed, wherein a residual amount of the silicon melt remaining in the vitreous silica crucible is obtained from a weight of the silicon single crystal which is pulled previously, and an additional filling amount of the raw material which satisfies the predictive value of the initial liquid surface level of the silicon melt used in the subsequent pulling of the silicon single crystal is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible and the residual amount of the silicon melt, wherein the additional filling amount of the raw material is adjusted so that the initial liquid surface level at the time of the subsequent pulling of the silicon single crystal is lower than the initial liquid surface level at the time of the previous pulling of the silicon single crystal.