A method for manufacturing a photovoltaic device comprising a photovoltaic cell or a plurality of photovoltaic cells (PV cells) connected to an electronic integrated circuit (170, 480), the method comprising the following steps: - a step of executing a stack comprising the cell or the plurality of PV cells which comprises for the executing, of each PV cell the execution in a semi-conducting material of at least two regions having opposite P and N doping; wherein the step of executing the cell or the plurality of PV cells comprises the following step at least, executed from the stack comprising a substrate topped with an insulating layer (110, 211, 620) and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion: - a step of forming the PV cell or PV cells by etching the semi-conducting layer so as to form respectively one or more island(s) distant from each other, each one comprising a superimposition of the lower and upper portions of the semi-conducting layer and having a front face formed by the upper portion, each island forming a PV cell; - after the step of executing the cell or the plurality of PV cells, a cycle of steps of connection comprising at least executing the first connections comprising at least one receiving area intended to electrically connect the at least one PV cell with at least one electronic integrated circuit, said receiving area being located on the insulating layer (110, 211, 620); - after the cycle of the steps of connection, a step of transferring, onto said stack comprising the cell or the plurality of PV cells, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit. - a step of executing a stack comprising the cell or the plurality of PV cells which comprises for the executing, of each PV cell the execution in a semi-conducting material of at least two regions having opposite P and N doping; wherein the step of executing the cell or the plurality of PV cells comprises the following step at least, executed from the stack comprising a substrate topped with an insulating layer (110, 211, 620) and a semi-conducting layer, the semi-conducting layer comprising at least one upper portion extending from an upper face of the semi-conducting layer and having a P or N doping and a lower portion located under the upper portion and having a P or N doping opposite to the doping of the upper portion: - a step of forming the PV cell or PV cells by etching the semi-conducting layer so as to form respectively one or more island(s) distant from each other, each one comprising a superimposition of the lower and upper portions of the semi-conducting layer and having a front face formed by the upper portion, each island forming a PV cell; - after the step of executing the cell or the plurality of PV cells, a cycle of steps of connection comprising at least executing the first connections comprising at least one receiving area intended to electrically connect the at least one PV cell with at least one electronic integrated circuit, said receiving area being located on the insulating layer (110, 211, 620); - after the cycle of the steps of connection, a step of transferring, onto said stack comprising the cell or the plurality of PV cells, a previously manufactured electronic integrated circuit, with the step of transfer being executed so as to electrically connect the at least one receiving area with an electrical contact area carried by the electronic integrated circuit.