A high frequency power diode comprising: a semiconductor wafer having a first main side and a second main side opposite to the first main side, a first layer formed in the semiconductor wafer adjacent to the first main side, the first layer having a first conductivity type which is either n- or p-type conductivity, a second layer formed in the semiconductor wafer adjacent to the second main side, the second layer having a second conductivity type which is either n- or p-type conductivity but different from the first conductivity type, a third layer formed in the semiconductor wafer between the first layer and the second layer, the third layer having the second conductivity type, wherein the first layer has a first conductivity type dopant concentration decreasing from 10 19 cm -3 or more adjacent to the first main side of the wafer to 1.5·10 15 cm -3 or less at an interface of the first layer with the third layer, wherein the second layer has a second conductivity type dopant concentration decreasing from 10 19 cm -3 or more adjacent to the second main side of the wafer to 1.5·10 15 cm -3 at an interface of the second layer with the third layer, and wherein the third layer has a second conductivity type dopant concentration of 1.5·10 15 cm -3 or less characterized in that the first conductivity type dopant concentration in the first layer at a distance of 50 μm from the first main side and the second conductivity type dopant concentration in the second layer at a distance of 50 μm from the second main side is 10 17 cm -3 or more, respectively, and the thickness of the third layer is less than 60 μm. a semiconductor wafer having a first main side and a second main side opposite to the first main side, a first layer formed in the semiconductor wafer adjacent to the first main side, the first layer having a first conductivity type which is either n- or p-type conductivity, a second layer formed in the semiconductor wafer adjacent to the second main side, the second layer having a second conductivity type which is either n- or p-type conductivity but different from the first conductivity type, a third layer formed in the semiconductor wafer between the first layer and the second layer, the third layer having the second conductivity type, wherein the first layer has a first conductivity type dopant concentration decreasing from 10 19 cm -3 or more adjacent to the first main side of the wafer to 1.5·10 15 cm -3 or less at an interface of the first layer with the third layer, wherein the second layer has a second conductivity type dopant concentration decreasing from 10 19 cm -3 or more adjacent to the second main side of the wafer to 1.5·10 15 cm -3 at an interface of the second layer with the third layer, and wherein the third layer has a second conductivity type dopant concentration of 1.5·10 15 cm -3 or less characterized in that the first conductivity type dopant concentration in the first layer at a distance of 50 μm from the first main side and the second conductivity type dopant concentration in the second layer at a distance of 50 μm from the second main side is 10 17 cm -3 or more, respectively, and the thickness of the third layer is less than 60 μm.