mhurhangee/ep-ind-claims huggingface dataset:
A manufacturing method of a semiconductor structure, comprising: providing a base with an electrical contact layer therein; forming an insulating layer on the base, the insulating layer having a through hole penetrating the insulating layer, and the through hole exposing a surface of the electrical contact layer; forming a sidewall layer on a sidewall of the through hole, a top surface of the sidewall layer being lower than a top surface of the insulating layer; forming a first isolation layer, the first isolation layer covering a surface of the sidewall layer and an exposed surface of the insulating layer; removing the sidewall layer to form a gap between the first isolation layer and the insulating layer; forming a second isolation layer on a surface of the first isolation layer, a density of the second isolation layer being greater than that of the first isolation layer; removing the first isolation layer and the second isolation layer located at the bottom of the through hole and the top surface of the insulating layer; and forming a conducting layer filling the through hole, the conducting layer being electrically connected to the electrical contact layer. providing a base with an electrical contact layer therein; forming an insulating layer on the base, the insulating layer having a through hole penetrating the insulating layer, and the through hole exposing a surface of the electrical contact layer; forming a sidewall layer on a sidewall of the through hole, a top surface of the sidewall layer being lower than a top surface of the insulating layer; forming a first isolation layer, the first isolation layer covering a surface of the sidewall layer and an exposed surface of the insulating layer; removing the sidewall layer to form a gap between the first isolation layer and the insulating layer; forming a second isolation layer on a surface of the first isolation layer, a density of the second isolation layer being greater than that of the first isolation layer; removing the first isolation layer and the second isolation layer located at the bottom of the through hole and the top surface of the insulating layer; and forming a conducting layer filling the through hole, the conducting layer being electrically connected to the electrical contact layer.
A solar cell module comprising: a plurality of solar cells connected with one another in such a manner that electrodes (11, 12) formed on surfaces of neighboring solar cells are connected with each other through a wiring member, wherein the wiring member includes a corrugated portion formed on at least one side, a vertex portion of the corrugated portion of the wiring member bites into the electrode (11, 12), and the solar cells and the wiring member are bonded to each other by a resin; characterized in that the corrugated portion is harder than a surface of the electrode.
A high-strength telescopic arm, comprising a plurality of coaxial sections with steadily decreasing sizes and are inserted inside one another which can slide relative to one another and, thanks to suitable drive means can move the arm from the home position to the operating position and vice versa; each section comprising, in cross-section, an upper part a lower part lateral parts (3c, 3d) therebetween; each section comprising a plurality of straight segments arranged in sequence; each straight segment having a length (b), a thickness and two ends (6a, 6b); each end (6a, 6b) of each straight segment being connected to one end (6a, 6b) of an adjacent straight section to form a closed section; characterised in that all of the straight segments have the same thickness (tl); in that it also comprises, on the lower part of the section subjected to compression, only a weld seam joining two adjacent straight segments or two half-segments (5a, 5b) forming a single segment and provided on the axis of symmetry of the section; in that the number of straight segments of the lower part of the section is equal or more than three; and in that it is completely made entirely from a material with a yield strength of more than 800 MPA (N/mm 2).
A method for preparing a dark foodstuff, comprising - providing a starting mixture comprising active malt, water and grains or a milling fraction thereof; - subjecting the starting mixture to at least 3 heating cycles, each heating cycle comprising the steps of a) heating at a temperature of about 60°C for at least 16 hours, followed by b) heating at a temperature of about 70°C for at least 16 hours, followed by c) heating at a temperature of about 80°C for at least 16 hours, followed by d) heating at a temperature of about 90°C for at least 16 hours, followed by e) cooling to a temperature below 10°C and maintaining said temperature for at least 10 hours; and - wherein additional active malt is added to the mixture in between each heating cycle. - providing a starting mixture comprising active malt, water and grains or a milling fraction thereof; - subjecting the starting mixture to at least 3 heating cycles, each heating cycle comprising the steps of a) heating at a temperature of about 60°C for at least 16 hours, followed by b) heating at a temperature of about 70°C for at least 16 hours, followed by c) heating at a temperature of about 80°C for at least 16 hours, followed by d) heating at a temperature of about 90°C for at least 16 hours, followed by e) cooling to a temperature below 10°C and maintaining said temperature for at least 10 hours; and a) heating at a temperature of about 60°C for at least 16 hours, followed by b) heating at a temperature of about 70°C for at least 16 hours, followed by c) heating at a temperature of about 80°C for at least 16 hours, followed by d) heating at a temperature of about 90°C for at least 16 hours, followed by e) cooling to a temperature below 10°C and maintaining said temperature for at least 10 hours; and - wherein additional active malt is added to the mixture in between each heating cycle.
A humidification and air cleaning apparatus comprising a water tank to store water and a discharge humidification medium housing disposed on the water tank, the discharge humidification medium housing comprises: a discharge flow passage to discharge air; a water supply flow passage to supply water; and a reservoir to store water and to supply stored water into the water tank; characterized in that the discharge humidification medium housing further comprises: a housing (1410, 1420) covering the discharge flow passage and receiving a discharge humidification medium; a housing opening disposed inside the housing (1410, 1420), opened in a vertical direction, and forming the water supply flow passage; and a water supply cap covering the housing opening, wherein the reservoir is formed between the water supply cap and the housing (1410, 1420); wherein a water outlet is formed inside of a reservoir wall to discharge water stored in the reservoir, thereby allowing the water supply flow passage to supply water into the water tank. a discharge flow passage to discharge air; a water supply flow passage to supply water; and a reservoir to store water and to supply stored water into the water tank; characterized in that the discharge humidification medium housing further comprises: a housing (1410, 1420) covering the discharge flow passage and receiving a discharge humidification medium; a housing opening disposed inside the housing (1410, 1420), opened in a vertical direction, and forming the water supply flow passage; and a water supply cap covering the housing opening, wherein the reservoir is formed between the water supply cap and the housing (1410, 1420); wherein a water outlet is formed inside of a reservoir wall to discharge water stored in the reservoir, thereby allowing the water supply flow passage to supply water into the water tank. a housing (1410, 1420) covering the discharge flow passage and receiving a discharge humidification medium; a housing opening disposed inside the housing (1410, 1420), opened in a vertical direction, and forming the water supply flow passage; and a water supply cap covering the housing opening, wherein the reservoir is formed between the water supply cap and the housing (1410, 1420); wherein a water outlet is formed inside of a reservoir wall to discharge water stored in the reservoir, thereby allowing the water supply flow passage to supply water into the water tank.
Rolling element for use in rolling element bearings, in particular in large rolling element bearings, wherein the rolling element has a logarithmic profile in the unloaded state, wherein the profile at least partly satisfies the profile function P x = { c 1 ⋅ D we ⋅ log 1 1 − 2 ⋅ x L we 2 for x ≤ x grenz c 2 ⋅ D we ⋅ log 1 1 − 2 ⋅ x L we 2 for x > x grenz where D we corresponds to the maximum diameter of the rolling element and L we corresponds to the effective length of the rolling element, c 1 is a first logarithmic coefficient, c 2 is a second logarithmic coefficient, where x grenz is a transition constant, and the x coordinate extends parallel to the axis of rotation of the rolling element, characterized in that c 1 and c 2 have different values, the first logarithmic coefficient c 1 being a function c 1 = c 1 (x) dependent on x. where D we corresponds to the maximum diameter of the rolling element and L we corresponds to the effective length of the rolling element, c 1 is a first logarithmic coefficient, c 2 is a second logarithmic coefficient, where x grenz is a transition constant, and the x coordinate extends parallel to the axis of rotation of the rolling element, characterized in that c 1 and c 2 have different values, the first logarithmic coefficient c 1 being a function c 1 = c 1 (x) dependent on x.
Process for synthesizing an AFX zeolite having a purity of greater than 90%, comprising at least the following steps: i) mixing, in an aqueous medium, of at least one source of silicon (Si) in SiO 2 oxide form, at least one source of aluminium (Al) in Al 2 O 3 oxide form, a nitrogenous organic compound R, R being 1,6-bis(methylpiperidinium)hexane dihydroxide, of at least one source of at least one alkali metal M chosen from lithium, potassium or sodium, and the mixture of at least two of these metals, the reaction mixture having the following molar composition: SiO 2 /Al 2 O 3 between 4 and 60, preferably between 8 and 40, H 2 O/SiO 2 between 5 and 60, preferably between 10 and 40, R/SiO 2 between 0.05 and 0.50, preferably between 0.10 and 0.30, M 2 O/SiO 2 between 0.10 and 0.30, preferably between 0.15 and 0.25, until a homogeneous precursor gel is obtained; ii) hydrothermal treatment under atmospheric pressure of said precursor gel obtained at the end of step i) at a temperature of between 75°C and 95°C, limits included, for a period of between 40 and 100 hours, limits included, to obtain a solid AFX-structure crystalline phase, termed "AFX zeolite". i) mixing, in an aqueous medium, of at least one source of silicon (Si) in SiO 2 oxide form, at least one source of aluminium (Al) in Al 2 O 3 oxide form, a nitrogenous organic compound R, R being 1,6-bis(methylpiperidinium)hexane dihydroxide, of at least one source of at least one alkali metal M chosen from lithium, potassium or sodium, and the mixture of at least two of these metals, the reaction mixture having the following molar composition: SiO 2 /Al 2 O 3 between 4 and 60, preferably between 8 and 40, H 2 O/SiO 2 between 5 and 60, preferably between 10 and 40, R/SiO 2 between 0.05 and 0.50, preferably between 0.10 and 0.30, M 2 O/SiO 2 between 0.10 and 0.30, preferably between 0.15 and 0.25, until a homogeneous precursor gel is obtained; SiO 2 /Al 2 O 3 between 4 and 60, preferably between 8 and 40, H 2 O/SiO 2 between 5 and 60, preferably between 10 and 40, R/SiO 2 between 0.05 and 0.50, preferably between 0.10 and 0.30, M 2 O/SiO 2 between 0.10 and 0.30, preferably between 0.15 and 0.25, until a homogeneous precursor gel is obtained; ii) hydrothermal treatment under atmospheric pressure of said precursor gel obtained at the end of step i) at a temperature of between 75°C and 95°C, limits included, for a period of between 40 and 100 hours, limits included, to obtain a solid AFX-structure crystalline phase, termed "AFX zeolite".
A production apparatus of a skin-fitted foam molding member, comprising: a first mold having a mold face, an external surface of a core material being so disposed as to face the mold face of the first mold; a second mold having a mold face and so disposed as to open and close relative to the first mold, an external surface of a skin which has a roll portion bendably formed being so disposed as to face the mold face of the second mold; a bender for bending, in a state that the first mold and the second mold are closed, the roll portion to allow the roll portion to face an external surface of an end portion of the core material; and a filler for filling the foam body to between the internal surface of the core material and the internal surface of the skin, characterised by a welder for forming a seal portion which prevents a leak of a foam body filled between an internal surface of the core material and an internal surface of the skin, the preventing operation of the leak of the foam body being implemented by welding the end portion of the core material with the roll portion; wherein the skin has a rib portion which is so formed as to protrude from the internal surface of the skin toward the core material and which faces an internal surface of the end portion of the core material, and the rib portion forms an inward seal portion by sandwiching the end portion of the core material between the roll portion and the rib portion by dint of a foaming pressure of the foam body. a first mold having a mold face, an external surface of a core material being so disposed as to face the mold face of the first mold; a second mold having a mold face and so disposed as to open and close relative to the first mold, an external surface of a skin which has a roll portion bendably formed being so disposed as to face the mold face of the second mold; a bender for bending, in a state that the first mold and the second mold are closed, the roll portion to allow the roll portion to face an external surface of an end portion of the core material; and a filler for filling the foam body to between the internal surface of the core material and the internal surface of the skin, characterised by a welder for forming a seal portion which prevents a leak of a foam body filled between an internal surface of the core material and an internal surface of the skin, the preventing operation of the leak of the foam body being implemented by welding the end portion of the core material with the roll portion; wherein the skin has a rib portion which is so formed as to protrude from the internal surface of the skin toward the core material and which faces an internal surface of the end portion of the core material, and the rib portion forms an inward seal portion by sandwiching the end portion of the core material between the roll portion and the rib portion by dint of a foaming pressure of the foam body.
Reactor pressure vessel-cooling system (10, 50, 60, 70) of a nuclear installation, having a sealed containment vessel, wherein a reactor pressure vessel is arranged within the containment vessel, wherein a cooling-medium-collecting region for receiving a cooling medium is situated within the containment vessel, wherein, between the containment vessel and the reactor pressure vessel, there is so much cooling medium present that the reactor pressure vessel is at least partially surrounded by cooling medium, characterized in that, in the containment vessel, there is arranged a pump apparatus which is completely immersed in the cooling medium, in that cooling medium is fed to a nozzle apparatus by way of the pump apparatus, in that the nozzle apparatus has a number of cooling-medium nozzles, and in that the cooling-medium nozzles are arranged in such a way that, by way of the cooling medium flowing through the cooling-medium nozzles, a cooling-medium forced flow is generated in the cooling medium of the cooling-medium-collecting region, by way of which cooling-medium forced flow a surface region of the reactor pressure vessel is flowed against.
A method of preparing a radioactive surface source for radiotherapy, comprising: providing a structure having a metallic surface; positioning said structure in a flux of at Least one radionuclide selected from the group consisting of Radium-223 and Radium-224 so as to collect atoms of said at least one radionuclide on or beneath said surface; and applying a thermal treatment to said surface and said atoms by heating said surface to a temperature of from about 400 °C to about 500 °C, such that said atoms arc intercalated into said surface but allowed to recoil out of said surface upon radioactive decay, to emit a therapeutic dose of decay chain nuclei. providing a structure having a metallic surface; positioning said structure in a flux of at Least one radionuclide selected from the group consisting of Radium-223 and Radium-224 so as to collect atoms of said at least one radionuclide on or beneath said surface; and applying a thermal treatment to said surface and said atoms by heating said surface to a temperature of from about 400 °C to about 500 °C, such that said atoms arc intercalated into said surface but allowed to recoil out of said surface upon radioactive decay, to emit a therapeutic dose of decay chain nuclei.
A method of dispatching electrical power from an energy storage system, the method comprising: monitoring electrical power demand of a facility load; setting a first demand period; setting a first demand cap for said first demand period; comparing the electrical power demand of the facility load against the first demand cap during the first demand period; in response to determining that the electrical power demand of the facility load is expected to be greater than the first demand cap, discharging at sufficient power to cover the difference between the electrical power demand and the first demand cap; in response to determining that the electrical power demand of the facility load is expected to be less than the first demand cap, determining whether the energy storage system can dispatch electrical power at full power discharge of the storage system for a duration equal to or longer than a remaining time in the first demand period; dependent on determining that the energy storage system can dispatch electrical power at the full power discharge of the storage system for the duration equal to or longer than the remaining time in the first demand period, discharging electrical power from the energy storage system at the full power discharge of the storage system. monitoring electrical power demand of a facility load; setting a first demand period; setting a first demand cap for said first demand period; comparing the electrical power demand of the facility load against the first demand cap during the first demand period; in response to determining that the electrical power demand of the facility load is expected to be greater than the first demand cap, discharging at sufficient power to cover the difference between the electrical power demand and the first demand cap; in response to determining that the electrical power demand of the facility load is expected to be less than the first demand cap, determining whether the energy storage system can dispatch electrical power at full power discharge of the storage system for a duration equal to or longer than a remaining time in the first demand period; dependent on determining that the energy storage system can dispatch electrical power at the full power discharge of the storage system for the duration equal to or longer than the remaining time in the first demand period, discharging electrical power from the energy storage system at the full power discharge of the storage system.
An array substrate, comprising: a substrate base; and a thin film transistor unit and a color filter on the substrate base, wherein the color filter is conductive and electrically connected with a drain electrode of the thin film transistor unit, wherein the array substrate further comprises: a first insulation layer between the color filter and the thin film transistor unit, wherein a first via hole is formed in a region of the first insulation layer corresponding to the drain electrode of the thin film transistor unit, and wherein the color filter is electrically connected with the drain electrode through the first via hole, wherein the color filter is separated electrically into a plurality of parts corresponding to pixel units respectively, and wherein the plurality of parts of the color filter corresponding to pixel units respectively are insulated electrically from one another by the first insulation layer, and wherein the color filter is located between the thin film transistor unit and the substrate base. a substrate base; and a thin film transistor unit and a color filter on the substrate base, wherein the color filter is conductive and electrically connected with a drain electrode of the thin film transistor unit, wherein the array substrate further comprises: a first insulation layer between the color filter and the thin film transistor unit, wherein a first via hole is formed in a region of the first insulation layer corresponding to the drain electrode of the thin film transistor unit, and wherein the color filter is electrically connected with the drain electrode through the first via hole, wherein the color filter is separated electrically into a plurality of parts corresponding to pixel units respectively, and wherein the plurality of parts of the color filter corresponding to pixel units respectively are insulated electrically from one another by the first insulation layer, and a first insulation layer between the color filter and the thin film transistor unit, wherein a first via hole is formed in a region of the first insulation layer corresponding to the drain electrode of the thin film transistor unit, and wherein the color filter is electrically connected with the drain electrode through the first via hole, wherein the color filter is separated electrically into a plurality of parts corresponding to pixel units respectively, and wherein the plurality of parts of the color filter corresponding to pixel units respectively are insulated electrically from one another by the first insulation layer, and wherein the color filter is located between the thin film transistor unit and the substrate base.
A method of adapting a fixed duration frame structure for communication with a plurality of scheduled user equipments by allocation of frame resource elements allocatable to channel estimation or else data transmission in a Multi Input Multi Output wireless communication network, said method comprising: determining a channel estimate associated with each of said plurality of user equipments to be scheduled in a given frame; assessing whether a channel estimate validity time associated with each of said plurality of scheduled user equipments is current or has expired; and allocating said frame resource elements within said fixed duration frame to channel estimation or else data transmission with said plurality of scheduled user equipments in dependence upon said assessment. determining a channel estimate associated with each of said plurality of user equipments to be scheduled in a given frame; assessing whether a channel estimate validity time associated with each of said plurality of scheduled user equipments is current or has expired; and allocating said frame resource elements within said fixed duration frame to channel estimation or else data transmission with said plurality of scheduled user equipments in dependence upon said assessment.