An electrostatic chuck comprising: a ceramic structural element providing a base of the electrostatic chuck; at least one electrode disposed on the ceramic structural element; and a surface dielectric layer disposed over the at least one electrode, the surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface dielectric layer comprising: (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer, the stack of dielectric layers including: (a) at least one dielectric layer including aluminum oxynitride; and (b)at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, wherein the stack of dielectric layers further includes either: (c) a first dielectric layer deposited over the insulator layer, the first dielectric layer including silicon oxide; the at least one dielectric layer including aluminum oxynitride deposited as a second dielectric layer over the first dielectric layer; and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride deposited as a third dielectric layer over the second dielectric layer, the third dielectric layer including silicon oxide; or (d) the at least one dielectric layer including aluminum oxynitride being a first dielectric layer disposed over the insulator layer, and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, being a second dielectric layer disposed over the first dielectric layer. a ceramic structural element providing a base of the electrostatic chuck; at least one electrode disposed on the ceramic structural element; and a surface dielectric layer disposed over the at least one electrode, the surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface dielectric layer comprising: (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer, the stack of dielectric layers including: (a) at least one dielectric layer including aluminum oxynitride; and (b)at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, wherein the stack of dielectric layers further includes either: (c) a first dielectric layer deposited over the insulator layer, the first dielectric layer including silicon oxide; the at least one dielectric layer including aluminum oxynitride deposited as a second dielectric layer over the first dielectric layer; and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride deposited as a third dielectric layer over the second dielectric layer, the third dielectric layer including silicon oxide; or (d) the at least one dielectric layer including aluminum oxynitride being a first dielectric layer disposed over the insulator layer, and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, being a second dielectric layer disposed over the first dielectric layer. (i) an insulator layer of amorphous alumina, of a thickness of less than about 5 microns, disposed over the at least one electrode; and (ii) a stack of dielectric layers disposed over the insulator layer, the stack of dielectric layers including: (a) at least one dielectric layer including aluminum oxynitride; and (b)at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, wherein the stack of dielectric layers further includes either: (c) a first dielectric layer deposited over the insulator layer, the first dielectric layer including silicon oxide; the at least one dielectric layer including aluminum oxynitride deposited as a second dielectric layer over the first dielectric layer; and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride deposited as a third dielectric layer over the second dielectric layer, the third dielectric layer including silicon oxide; or (d) the at least one dielectric layer including aluminum oxynitride being a first dielectric layer disposed over the insulator layer, and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, being a second dielectric layer disposed over the first dielectric layer. (a) at least one dielectric layer including aluminum oxynitride; and (b)at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, wherein the stack of dielectric layers further includes either: (c) a first dielectric layer deposited over the insulator layer, the first dielectric layer including silicon oxide; the at least one dielectric layer including aluminum oxynitride deposited as a second dielectric layer over the first dielectric layer; and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride deposited as a third dielectric layer over the second dielectric layer, the third dielectric layer including silicon oxide; or (d) the at least one dielectric layer including aluminum oxynitride being a first dielectric layer disposed over the insulator layer, and the at least one dielectric layer including at least one of silicon oxide and silicon oxynitride, being a second dielectric layer disposed over the first dielectric layer.