An LDMOS transistor provided in a semiconductor substrate, the LDMOS transistor comprising: a gate electrode, which extends over a channel region; a source region and a drain region being mutually connected through the channel region, the drain region comprising a drain contact region and a drain extension region extending from the drain contact region towards the channel region, wherein the drain extension region comprises a first drain extension subregion and a second drain extension subregion, wherein the first drain extension subregion has a higher dopant concentration than the second drain extension subregion and adjoins the channel region and wherein the second drain extension subregion adjoins the drain contact region; a shield layer extending over a portion of the gate electrode and the first drain extension subregion; a first gate oxide layer and a second gate oxide layer adjacent to the first gate oxide layer, wherein: the first gate oxide layer extends over the channel region adjacent to the source region and over a first and second portion of the drain extension region, and the second gate oxide layer extends over a third portion of the drain extension region, which third portion mutually connects the first and the second portions of the drain extension region; or the first gate oxide layer extends over a first portion of the channel region adjacent to the source region and the second gate oxide layer extends over a portion of the drain extension region and over a second portion of the channel region, which second portion mutually connects the drain extension region and the first portion of the channel region; wherein the second gate oxide layer has a greater thickness than the first gate oxide layer; wherein the shield layer is separated from the gate electrode and the first and the second gate oxide layers by an insulation layer, the shield layer and the second gate oxide layer both extending over the region where the first drain extension subregion and the second drain extension subregion adjoin. a gate electrode, which extends over a channel region; a source region and a drain region being mutually connected through the channel region, the drain region comprising a drain contact region and a drain extension region extending from the drain contact region towards the channel region, wherein the drain extension region comprises a first drain extension subregion and a second drain extension subregion, wherein the first drain extension subregion has a higher dopant concentration than the second drain extension subregion and adjoins the channel region and wherein the second drain extension subregion adjoins the drain contact region; a shield layer extending over a portion of the gate electrode and the first drain extension subregion; a first gate oxide layer and a second gate oxide layer adjacent to the first gate oxide layer, wherein: the first gate oxide layer extends over the channel region adjacent to the source region and over a first and second portion of the drain extension region, and the second gate oxide layer extends over a third portion of the drain extension region, which third portion mutually connects the first and the second portions of the drain extension region; or the first gate oxide layer extends over a first portion of the channel region adjacent to the source region and the second gate oxide layer extends over a portion of the drain extension region and over a second portion of the channel region, which second portion mutually connects the drain extension region and the first portion of the channel region; the first gate oxide layer extends over the channel region adjacent to the source region and over a first and second portion of the drain extension region, and the second gate oxide layer extends over a third portion of the drain extension region, which third portion mutually connects the first and the second portions of the drain extension region; or the first gate oxide layer extends over a first portion of the channel region adjacent to the source region and the second gate oxide layer extends over a portion of the drain extension region and over a second portion of the channel region, which second portion mutually connects the drain extension region and the first portion of the channel region; wherein the second gate oxide layer has a greater thickness than the first gate oxide layer; wherein the shield layer is separated from the gate electrode and the first and the second gate oxide layers by an insulation layer, the shield layer and the second gate oxide layer both extending over the region where the first drain extension subregion and the second drain extension subregion adjoin.