A method for forming a carbon-doped silicon oxide film via a plasma enhanced ALD process, the method comprising: a) providing a substrate comprising a surface feature in a reactor; b) heating the reactor to one or more temperatures ranging from about 20°C to about 400°C and, optionally, maintaining the reactor at a pressure of 100 torr or less; c) introducing into the reactor at least one silicon precursor having two Si-C-Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-hexachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, and 1,1,5,5-tetrachloro-1,3,5-trisilapentane, 1-iodo-1,3-disilacyclobutane, 1,1-diiodo-1,3-disilacyclobutane, 1,3-diiodo-1,3-disilacyclobutane, 1,1,3-triiodo-1,3-disilacyclobutane, 1,1,3,3-tetraiodo-1,3-disilacyclobutane, 1,3-diiodo-1,3-dimethyl-1,3-disilacyclobutane, 1-chloro-1,3,5-trisilapentane, 1,5-dichloro-1,3,5-trisilapentane, 1-bromo-1,3,5-trisilapentane, 1,5-dibromo-1,3,5-trisilapentane, 1-iodo-1,3,5-trisilapentane, and 1,5-diiodo-1,3,5-trisilapentane to anchor a chemisorbed layer on the substrate; d) purging the reactor of any unconsumed precursors and/or reaction by-products from step c, with an inert gas; e) providing a plasma comprising hydrogen into the reactor to react with the chemisorbed layer to form a silicon carbide film; f) purging the reactor of any reaction by-products from step e with an inert gas; g) repeating steps c to f as necessary to bring the silicon carbide film to a predetermined thickness; h) exposing the resulting silicon carbide film to an oxygen source at one or more temperatures ranging from about ambient temperature to 1000°C to convert the silicon carbide film into a carbon doped silicon oxide film, wherein the carbon-doped silicon oxide film has a carbon content ranging between about 20 at. % and about 40 at. %. a) providing a substrate comprising a surface feature in a reactor; b) heating the reactor to one or more temperatures ranging from about 20°C to about 400°C and, optionally, maintaining the reactor at a pressure of 100 torr or less; c) introducing into the reactor at least one silicon precursor having two Si-C-Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-hexachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, and 1,1,5,5-tetrachloro-1,3,5-trisilapentane, 1-iodo-1,3-disilacyclobutane, 1,1-diiodo-1,3-disilacyclobutane, 1,3-diiodo-1,3-disilacyclobutane, 1,1,3-triiodo-1,3-disilacyclobutane, 1,1,3,3-tetraiodo-1,3-disilacyclobutane, 1,3-diiodo-1,3-dimethyl-1,3-disilacyclobutane, 1-chloro-1,3,5-trisilapentane, 1,5-dichloro-1,3,5-trisilapentane, 1-bromo-1,3,5-trisilapentane, 1,5-dibromo-1,3,5-trisilapentane, 1-iodo-1,3,5-trisilapentane, and 1,5-diiodo-1,3,5-trisilapentane to anchor a chemisorbed layer on the substrate; d) purging the reactor of any unconsumed precursors and/or reaction by-products from step c, with an inert gas; e) providing a plasma comprising hydrogen into the reactor to react with the chemisorbed layer to form a silicon carbide film; f) purging the reactor of any reaction by-products from step e with an inert gas; g) repeating steps c to f as necessary to bring the silicon carbide film to a predetermined thickness; h) exposing the resulting silicon carbide film to an oxygen source at one or more temperatures ranging from about ambient temperature to 1000°C to convert the silicon carbide film into a carbon doped silicon oxide film,