Back contact solar cell (01, 20) at least having • an absorber layer (02, 22) and an emitter layer disposed on a rear side made of semiconductor materials of opposite p and n type doping, • a metal contact grid disposed between the absorber layer (02, 22) and the emitter layer which is electrically insulated with respect to the emitter layer by a congruent insulation grid, for collection of excess majority charge carriers produced by incidence of light in the absorber layer (02, 22), wherein insulation elements of the insulation grid have a lateral overlap width over contact elements of the contact grid, • a continuous contact surface disposed on the rear side on the emitter layer, for collection of excess minority charge carriers produced by incidence of light in the absorber layer (02, 22) and • an unstructured intrinsically conductive passivation layer disposed on the rear side, which is disposed at least between the individual contact elements directly on the absorber layer (02, 22), • an accumulation of excess majority charge carriers and repulsion of excess minority charge carriers from the absorber layer (02, 22) in the region of the contact grid by • a formation of the insulation grid from a non-doped electrically insulating passivating material having a high surface charge with opposite polarity for doping the absorber layer (02, 22), wherein the surface charge is so high that a degeneration results at the surface of the absorber layer (02, 22) and • a formation of the metal contact grid with a potential barrier to the intrinsically conductive passivation layer which supports the accumulation and repulsion • such a lateral overlap width of the insulation elements of the insulation grid over the contact elements of the contact grid that no majority charge carriers can flow from the emitter layer to the contact elements of the contact grid, characterized by • a full-surface arrangement of the intrinsically conductive passivation layer directly on the entire absorber layer (02, 22) which is configured to be unstructured at its interface to the intrinsically conductive passivation layer, • a direct arrangement of the contact grid on the intrinsically conductive passivation layer. • an absorber layer (02, 22) and an emitter layer disposed on a rear side made of semiconductor materials of opposite p and n type doping, • a metal contact grid disposed between the absorber layer (02, 22) and the emitter layer which is electrically insulated with respect to the emitter layer by a congruent insulation grid, for collection of excess majority charge carriers produced by incidence of light in the absorber layer (02, 22), wherein insulation elements of the insulation grid have a lateral overlap width over contact elements of the contact grid, • a continuous contact surface disposed on the rear side on the emitter layer, for collection of excess minority charge carriers produced by incidence of light in the absorber layer (02, 22) and • an unstructured intrinsically conductive passivation layer disposed on the rear side, which is disposed at least between the individual contact elements directly on the absorber layer (02, 22), • an accumulation of excess majority charge carriers and repulsion of excess minority charge carriers from the absorber layer (02, 22) in the region of the contact grid by • a formation of the insulation grid from a non-doped electrically insulating passivating material having a high surface charge with opposite polarity for doping the absorber layer (02, 22), wherein the surface charge is so high that a degeneration results at the surface of the absorber layer (02, 22) and • a formation of the metal contact grid with a potential barrier to the intrinsically conductive passivation layer which supports the accumulation and repulsion • a formation of the insulation grid from a non-doped electrically insulating passivating material having a high surface charge with opposite polarity for doping the absorber layer (02, 22), wherein the surface charge is so high that a degeneration results at the surface of the absorber layer (02, 22) and • a formation of the metal contact grid with a potential barrier to the intrinsically conductive passivation layer which supports the accumulation and repulsion • such a lateral overlap width of the insulation elements of the insulation grid over the contact elements of the contact grid that no majority charge carriers can flow from the emitter layer to the contact elements of the contact grid, characterized by • a full-surface arrangement of the intrinsically conductive passivation layer directly on the entire absorber layer (02, 22) which is configured to be unstructured at its interface to the intrinsically conductive passivation layer, • a direct arrangement of the contact grid on the intrinsically conductive passivation layer.