An optical detector of the hybrid type, comprising a stack in accordance with an axis Z, comprising: - an absorbent structure (Sabs) which is sensitive in a wavelength band of interest, said structure comprising at least: - an absorbent layer made of semi-conductive material III-V or II-VI, which is referred to as active material, having a first doping type which is selected from n or p and which is capable of photogenerating carriers by absorbing a light which is incident on said detector and which has at least one wavelength included within the wavelength band of interest, - an upper layer (Lsup) made of a semi-conductive material III-V or IV, which is referred to as upper material and which is arranged on the absorbent layer and has a surface in contact with the exterior at the side from which the detector is illuminated, and - the absorbent structure further comprising, in at least one layer, a plurality of zones which are doped with a second doping type, which is selected from n or p, and which are configured in order to collect carriers which are photogenerated by the absorbent layer, a doped zone allowing the definition of a pixel (Pix) of the detector, - a reading circuit (ROIC) comprising a plurality of contacts which are buried, the reading circuit being intended to recover an electrical signal from the carriers which are photogenerated by the absorbent layer, - the absorbent structure (Sabs) and the reading circuit (ROIC) being assembled by an assembly layer in order to form the optical detector, an electrical connection between a doped zone and a contact of the reading circuit (ROIC) being made via metallised interconnection holes, - the hybrid detector further comprising a set of dielectric resonators (Res) which are engraved in the upper layer (Lsup) and which form an upper surface (Ssup), each resonator being configured to diffuse in a resonating manner, when it is illuminated by the incident light, a light having at least one resonance wavelength (λ R) included within the wavelength band of interest, a fraction (Spix) of the upper surface (Ssup) associated with a pixel (Pix) of the detector comprising a plurality of dielectric resonators. - an absorbent structure (Sabs) which is sensitive in a wavelength band of interest, said structure comprising at least: - an absorbent layer made of semi-conductive material III-V or II-VI, which is referred to as active material, having a first doping type which is selected from n or p and which is capable of photogenerating carriers by absorbing a light which is incident on said detector and which has at least one wavelength included within the wavelength band of interest, - an upper layer (Lsup) made of a semi-conductive material III-V or IV, which is referred to as upper material and which is arranged on the absorbent layer and has a surface in contact with the exterior at the side from which the detector is illuminated, and - the absorbent structure further comprising, in at least one layer, a plurality of zones which are doped with a second doping type, which is selected from n or p, and which are configured in order to collect carriers which are photogenerated by the absorbent layer, a doped zone allowing the definition of a pixel (Pix) of the detector, - a reading circuit (ROIC) comprising a plurality of contacts which are buried, the reading circuit being intended to recover an electrical signal from the carriers which are photogenerated by the absorbent layer, - the absorbent structure (Sabs) and the reading circuit (ROIC) being assembled by an assembly layer in order to form the optical detector, an electrical connection between a doped zone and a contact of the reading circuit (ROIC) being made via metallised interconnection holes, - the hybrid detector further comprising a set of dielectric resonators (Res) which are engraved in the upper layer (Lsup) and which form an upper surface (Ssup), each resonator being configured to diffuse in a resonating manner, when it is illuminated by the incident light, a light having at least one resonance wavelength (λ R) included within the wavelength band of interest,