A patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition of a chemical amplification type, a step of exposing a high energy beam to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35 degrees or more to lower than 70 degrees after exposure, and showing a lower pure-water contact angle of the silicon-containing film obtained therefrom after exposure than the pure-water contact angle thereof before exposure is used as the composition for the silicon-containing film, wherein a composition containing at least a silicon-containing compound having a repeating unit shown by the following general formula (A-1) is used as the composition for the silicon-containing film;,wherein X represents an oxygen-containing functional group shown by any of the following general formulae (A-1-1), (A-1-2), and (A-1-3); and Y represents a hydrogen atom, or any of an alkyl group, an alkoxy alkyl group, and a trialkyl silyl group, with the carbon atoms contained in these alkyl groups being 1 to 6, or a repeating unit shown by the following general formula (A-1-4) or (A-1-5);,wherein n1 represents 1 or 2; R 1 represents a single bond or a linear, a branched, or a cyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms; and R 2 represents a hydrogen atom, or a linear, a branched, or a cyclic saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein R 1 and R 2 may contain one or more kinds selected from an oxygen atom, a silicon atom, and a halogen atom, while the dotted line therein shows the bonding site to the silicon atom; ----R 3 (̵R 4 -O-R 5) n2 (A-1-2), wherein n2 represent 1 or 2; each R 3 and R 4 independently represents a single bond, or a linear, a branched, or a cyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms, though they do not represent a single bond simultaneously; R 5 represents a hydrogen atom, or a linear, a branched, or a cyclic saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, or an acyl group, wherein R 3, R 4, and R 5 may contain one or more kinds selected from an oxygen atom, a silicon atom, and a halogen atom, while the dotted line therein shows the bonding site to the silicon atom;,wherein n3 represent 0, 1, or 2; and each R 6, R 7, and R 8 independently represents a saturated or unsaturated organic group having 1 to 20 carbon atoms and may contain any of an oxygen atom, a silicon atom, and a halogen atom, wherein R 6, R 7, and R 8 may form a cyclic organic group by bonding any two or more of them, while the dotted line therein shows the bonding site to the silicon atom; wherein X represents the same meaning as before, wherein further a composition containing a silicon-containing compound (A') whose repeating unit shown by the general formula (A-1) is changed to any of repeating units shown by the following general formulae (A-2), (A-3a), and (A-3b) by action of an acid generated by exposure in the photoresist film is used as the composition for the silicon-containing film;,wherein X 1 represents an oxygen-containing functional group shown by the following general formula (A-2-1) or (A-2-2); and Y 1 represents a hydrogen atom, or any of an alkyl group, an alkoxy alkyl group, and a trialkyl silyl group, with the carbon atoms contained in these alkyl groups being 1 to 6, or a repeating unit shown by the general formula (A-1-4) or (A-1-5), or by the following general formula (A-2-3);,wherein n1 and R 1 represent the same meanings as before, while the dotted line therein shows the bonding site to the silicon atom; ----R 3 (̵R 4 -O-H) n2 (A-2-2),wherein n2, R 3, and R 4 represent the same meanings as before, while the dotted line therein shows the bonding site to the silicon atom;,wherein X 1 represents the same meaning as before;,wherein Y 2 represents a hydrogen atom, or any of an alkyl group, an alkoxy alkyl group, and a trialkyl silyl group, with the carbon atoms contained in these alkyl groups being 1 to 6, or a repeating unit shown by the general formula (A-1-4), (A-1-5), or (A-2-3), or by the following general formula (A-3a-1) or (A-3b-1);