Turn-off power semiconductor device comprising: a wafer having a first main side, a second main side parallel to the first main side and extending in a lateral direction, an active region and a termination region laterally surrounding the active region; at least one thyristor cell in the active region between the first main side and the second main side, the at least one thyristor cell comprising in the order from the first main side to the second main side: (a) a first cathode electrode; (b) a cathode semiconductor layer of a first conductivity type; (c) a base semiconductor layer of a second conductivity type different from the first conductivity type; (d) a drift semiconductor layer of the first conductivity type; (e) an anode semiconductor layer of the second conductivity type; (f) an first anode electrode, wherein the at least one thyristor cell further comprises a gate electrode which is arranged lateral to the cathode semiconductor layer and contacting the base semiconductor layer, and wherein the at least one gate electrode of the at least one thyristor cell is electrically connected to a ring-shaped contact for contacting the at least one gate electrode of the at least one thyristor cell, wherein the ring-shaped contact is formed on the first main side of the wafer in the termination region and surrounds the active region; the device further comprising: a rubber ring arranged on the termination region and surrounding the active region; and an electrically conductive gate ring for contacting the ring-shaped contact from outside, wherein the gate ring is disposed on and electrically connected to the ring-shaped contact within the rubber ring, wherein an outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring, characterized in that an upper surface of the gate ring and an upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer. a wafer having a first main side, a second main side parallel to the first main side and extending in a lateral direction, an active region and a termination region laterally surrounding the active region; at least one thyristor cell in the active region between the first main side and the second main side, the at least one thyristor cell comprising in the order from the first main side to the second main side: (a) a first cathode electrode; (b) a cathode semiconductor layer of a first conductivity type; (c) a base semiconductor layer of a second conductivity type different from the first conductivity type; (d) a drift semiconductor layer of the first conductivity type; (e) an anode semiconductor layer of the second conductivity type; (f) an first anode electrode, (a) a first cathode electrode; (b) a cathode semiconductor layer of a first conductivity type; (c) a base semiconductor layer of a second conductivity type different from the first conductivity type; (d) a drift semiconductor layer of the first conductivity type; (e) an anode semiconductor layer of the second conductivity type; (f) an first anode electrode, wherein the at least one thyristor cell further comprises a gate electrode which is arranged lateral to the cathode semiconductor layer and contacting the base semiconductor layer, and wherein the at least one gate electrode of the at least one thyristor cell is electrically connected to a ring-shaped contact for contacting the at least one gate electrode of the at least one thyristor cell, wherein the ring-shaped contact is formed on the first main side of the wafer in the termination region and surrounds the active region; the device further comprising: a rubber ring arranged on the termination region and surrounding the active region; and an electrically conductive gate ring for contacting the ring-shaped contact from outside, wherein the gate ring is disposed on and electrically connected to the ring-shaped contact within the rubber ring, a rubber ring arranged on the termination region and surrounding the active region; and an electrically conductive gate ring for contacting the ring-shaped contact from outside, wherein the gate ring is disposed on and electrically connected to the ring-shaped contact within the rubber ring, wherein an outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring, characterized in that an upper surface of the gate ring and an upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.