An integrated circuit (100, 300) comprising: a substrate; a top interconnect metal layer (112, 328), the top interconnect metal layer (112, 328) having at least one bonding pad (130,330) formed thereon; one or more intermediate interconnect metal layers (108, 110, 312, 318) formed between the top interconnect metal layer (112, 328) and the substrate; and one or more layers of insulating material (122, 314, 324) separating the one or more interconnect metal layers (108, 110, 312, 318) from each other, characterized in that devices (102,104,106, 302, 304, 306) are formed in the integrated circuit (100, 300), at least one of the devices is formed under the bonding pad (130,330) wherein the one or more intermediate interconnect metal layers (108,110,312,324) are adapted for functional interconnections of said devices (102,104,106, 302, 304, 306), a plurality of gaps (124, 322) are formed in at least one conductor in one of the one or more intermediate interconnect metal layers, wherein the gaps (124, 322) are oriented in one direction of current flow through the at least one conductor to reduce an impact on the current flow through the at least one conductors, and wherein the top interconnect metal layer includes a sub-layer of relatively stiff material (126,326), and a surface of the sub-layer of relatively stiff material opposite the surface of the top interconnect metal layer forming the at least one bonding pad is adjacent to and in direct physical contact with a surface of one of the layers of insulating material (122,324) that separates the top interconnect metal layer (112,328) from an intermediate interconnect metal layer (110, 318) closest to the top interconnect metal layer, the sub-layer of relatively stiff material being relatively stiffer than a remainder of the top interconnect metal layer. a substrate; a top interconnect metal layer (112, 328), the top interconnect metal layer (112, 328) having at least one bonding pad (130,330) formed thereon; one or more intermediate interconnect metal layers (108, 110, 312, 318) formed between the top interconnect metal layer (112, 328) and the substrate; and one or more layers of insulating material (122, 314, 324) separating the one or more interconnect metal layers (108, 110, 312, 318) from each other, characterized in that devices (102,104,106, 302, 304, 306) are formed in the integrated circuit (100, 300), at least one of the devices is formed under the bonding pad (130,330) wherein the one or more intermediate interconnect metal layers (108,110,312,324) are adapted for functional interconnections of said devices (102,104,106, 302, 304, 306), a plurality of gaps (124, 322) are formed in at least one conductor in one of the one or more intermediate interconnect metal layers, wherein the gaps (124, 322) are oriented in one direction of current flow through the at least one conductor to reduce an impact on the current flow through the at least one conductors, and wherein the top interconnect metal layer includes a sub-layer of relatively stiff material (126,326), and a surface of the sub-layer of relatively stiff material opposite the surface of the top interconnect metal layer forming the at least one bonding pad is adjacent to and in direct physical contact with a surface of one of the layers of insulating material (122,324) that separates the top interconnect metal layer (112,328) from an intermediate interconnect metal layer (110, 318) closest to the top interconnect metal layer, the sub-layer of relatively stiff material being relatively stiffer than a remainder of the top interconnect metal layer.