mhurhangee/ep-ind-claims huggingface dataset:
An in situ system for nuclear measurement of the alpha radiation of an effluent, including: - M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, called alpha radiation detectors, intended to be immersed in the effluent, and able to measure directly alpha radiation emitted by said effluent, where M is an integer greater than or equal to 1; - P measuring channels connected to the M alpha radiation detectors, where P is an integer greater than or equal to 1 and less than or equal to M, and where each of the P measuring channels is able to supply an alpha activity value or a sum of such values from the alpha radiation detector(s) to which they are connected, wherein the system also includes, if P is greater than 1, a means for adding together the results from the P measuring channels and wherein the M alpha radiation detectors are individually calibrated by an α particle transport code based on the Monte Carlo method, the alpha radiation detectors connected to a given measuring channel being calibrated in the same manner, the system being characterised in that it further includes a monocrystalline semiconductor detector, called a spectrometry detector, intended to be immersed in the effluent, and enabling the proportion of the alpha radiation emitter elements present in the effluent to be identified and quantified. - M diamond semiconductor detectors obtained by chemical vapour deposition, or silicon semiconductor detectors covered with a diamond layer, called alpha radiation detectors, intended to be immersed in the effluent, and able to measure directly alpha radiation emitted by said effluent, where M is an integer greater than or equal to 1; - P measuring channels connected to the M alpha radiation detectors, where P is an integer greater than or equal to 1 and less than or equal to M, and where each of the P measuring channels is able to supply an alpha activity value or a sum of such values from the alpha radiation detector(s) to which they are connected, wherein the system also includes, if P is greater than 1, a means for adding together the results from the P measuring channels and wherein the M alpha radiation detectors are individually calibrated by an α particle transport code based on the Monte Carlo method, the alpha radiation detectors connected to a given measuring channel being calibrated in the same manner, the system being characterised in that it further includes a monocrystalline semiconductor detector, called a spectrometry detector, intended to be immersed in the effluent, and enabling the proportion of the alpha radiation emitter elements present in the effluent to be identified and quantified.
A composition with reduced bitterness comprising a polyquaternium selected from the group consisting of polyquaternium-2, polyquaternium-17, polyquaternium-18, and combinations thereof; wherein the composition further comprises a bitter component selected from the group consisting of Hops, guaifenesin, phenytoin, omeprazole, cetirizine, jambu, acetaminophen, methyl formyl anthranilate, 2-aminoacetophenone, methyl anthranilate, dimethyl anthranilate, beta-terpineol, beta-naphthyl anthranilate, and benzoyl anthranilic acid, 1,10-phenanthroline, saccharin, and propylene glycol, benzamide, brucine, 1,10-phenanthroline, and combinations thereof and/or the composition is selected from the group consisting of bitter food, bitter beverages, and combinations thereof. the composition further comprises a bitter component selected from the group consisting of Hops, guaifenesin, phenytoin, omeprazole, cetirizine, jambu, acetaminophen, methyl formyl anthranilate, 2-aminoacetophenone, methyl anthranilate, dimethyl anthranilate, beta-terpineol, beta-naphthyl anthranilate, and benzoyl anthranilic acid, 1,10-phenanthroline, saccharin, and propylene glycol, benzamide, brucine, 1,10-phenanthroline, and combinations thereof and/or the composition is selected from the group consisting of bitter food, bitter beverages, and combinations thereof.
A slurry polymerization process comprising polymerizing monomers in a reactor at a temperature from 60°C to 95°C and a pressure from 0.15 MPa to 3.0 MPa to form polyethylene where the polymerization occurs in the presence of a catalyst, monomers, diluent and optionally hydrogen in the reactor slurry, the reactor comprising: - a cylindrical reactor wall comprising an inner reactor wall surface, extending from a bottom tangent to a top tangent; - a bottom reactor head connected to the cylindrical reactor wall at the bottom tangent; - a top reactor head connected to the cylindrical reactor wall at the top tangent, the cylindrical reactor wall, bottom reactor head and top reactor head forming an internal reactor volume; - an agitator for mixing the contents of the internal reactor volume; - a reactor outlet for feeding a reactor slurry to a cooler, the reactor slurry comprising diluent, catalyst, polymer, unreacted monomer and optionally dissolved hydrogen, - a reactor baffle system comprising at least one baffle, the at least one baffle comprising a baffle top and a baffle bottom, where the at least one baffle is connected to the reactor inner wall surface and extends longitudinally along the reactor inner wall surface and radially into the internal reactor volume, - a first reactor inlet for returning cooled slurry from the cooler as a first reactor slurry stream; and - a cooled slurry feed line having a first feed line inlet end, which is connected to the first reactor inlet, and a first feed line discharge end, wherein the top surface of the reactor slurry within the internal reactor volume defines a reactor liquid level and the baffle top and the first feed line discharge end are located below the reactor liquid level. - a cylindrical reactor wall comprising an inner reactor wall surface, extending from a bottom tangent to a top tangent; - a bottom reactor head connected to the cylindrical reactor wall at the bottom tangent; - a top reactor head connected to the cylindrical reactor wall at the top tangent, the cylindrical reactor wall, bottom reactor head and top reactor head forming an internal reactor volume; - an agitator for mixing the contents of the internal reactor volume; - a reactor outlet for feeding a reactor slurry to a cooler, the reactor slurry comprising diluent, catalyst, polymer, unreacted monomer and optionally dissolved hydrogen, - a reactor baffle system comprising at least one baffle, the at least one baffle comprising a baffle top and a baffle bottom, where the at least one baffle is connected to the reactor inner wall surface and extends longitudinally along the reactor inner wall surface and radially into the internal reactor volume, - a first reactor inlet for returning cooled slurry from the cooler as a first reactor slurry stream; and - a cooled slurry feed line having a first feed line inlet end, which is connected to the first reactor inlet, and a first feed line discharge end,
A signal processing method, comprising: obtaining capability information of a terminal device, wherein the capability information comprises a processing time period for uplink data of the terminal device and a processing time period for uplink control information of the terminal device; determining a first time-frequency resource based on the capability information, wherein the first time-frequency resource is used to carry first uplink data and first uplink control information; and sending first signaling to the terminal device, wherein the first signaling indicates the first time-frequency resource, wherein the method further comprises: determining a transmission mode of the first uplink data and the first uplink control information based on the capability information, wherein the transmission mode is that the first uplink data and the first uplink control information are separately transmitted, or that the first uplink data and the first uplink control information are transmitted after being multiplexed, wherein the determining a first time-frequency resource based on the capability information comprises: determining the first time-frequency resource based on the capability information and the transmission mode. obtaining capability information of a terminal device, wherein the capability information comprises a processing time period for uplink data of the terminal device and a processing time period for uplink control information of the terminal device; determining a first time-frequency resource based on the capability information, wherein the first time-frequency resource is used to carry first uplink data and first uplink control information; and sending first signaling to the terminal device, wherein the first signaling indicates the first time-frequency resource, wherein the method further comprises: determining a transmission mode of the first uplink data and the first uplink control information based on the capability information, wherein the transmission mode is that the first uplink data and the first uplink control information are separately transmitted, or that the first uplink data and the first uplink control information are transmitted after being multiplexed, wherein the determining a first time-frequency resource based on the capability information comprises: determining the first time-frequency resource based on the capability information and the transmission mode.
A system, comprising: a first port having a first set of pins (201, 202, 203); a second port having a second set of pins (204, 205, 207), wherein the second port is configured to electrically connect to the first port via one or more electrical connections between the first set of pins and the second set of pins; a power supply line extending from a second pin in the second port, a power supply for providing a voltage to a first configuration channel line at a first pin in the first port, wherein the first pin in the first port is connected to the first pin in the second port and the first pin in the second port is connected to a second configuration line (361, 362); a first resistor (215; 217) connected to the second configuration channel line (361; 362); a short circuit protection circuit connected to the second port comprising: a voltage divider connected to a junction point on the second configuration channel line (361, 362) and comprising a second resistor and a thermistor, wherein the thermistor is connected to a ground line; and a field effect transistor, FET, connected to the first resistor (215; 217); and a controller configured to detect the voltage on the first configuration channel line at the first pin in the first port, wherein when the controller detects a voltage on the first pin in the first port being above a threshold value, the controller triggers power delivery on the power supply line. a first port having a first set of pins (201, 202, 203); a second port having a second set of pins (204, 205, 207), wherein the second port is configured to electrically connect to the first port via one or more electrical connections between the first set of pins and the second set of pins; a power supply line extending from a second pin in the second port, a power supply for providing a voltage to a first configuration channel line at a first pin in the first port, wherein the first pin in the first port is connected to the first pin in the second port and the first pin in the second port is connected to a second configuration line (361, 362); a first resistor (215; 217) connected to the second configuration channel line (361; 362); a short circuit protection circuit connected to the second port comprising: a voltage divider connected to a junction point on the second configuration channel line (361, 362) and comprising a second resistor and a thermistor, wherein the thermistor is connected to a ground line; and a field effect transistor, FET, connected to the first resistor (215; 217); and a voltage divider connected to a junction point on the second configuration channel line (361, 362) and comprising a second resistor and a thermistor, wherein the thermistor is connected to a ground line; and a field effect transistor, FET, connected to the first resistor (215; 217); and a controller configured to detect the voltage on the first configuration channel line at the first pin in the first port, wherein when the controller detects a voltage on the first pin in the first port being above a threshold value, the controller triggers power delivery on the power supply line.
Floor covering with at least two planar-surface floor covering elements (1, 2), which in each case comprise a usable surface and which can be laid on a sub-floor with a support surface opposite the usable surface, and with at least one connecting element, by means of which the two floor covering elements (1, 2) adjacent to one another are connected to one another, wherein each floor covering element (1, 2), in the support surface, comprises at least one recess (8, 9, 17) which, starting from a side surface of the floor covering element (1, 2) connecting the usable surface to the support surface extends away from the side surface, wherein the at least one recess (8, 9, 17) in the floor covering element (1, 2) in each case comprises an anchoring region and a connecting region connecting the anchoring region with the side surface and wherein the anchoring region comprises an undercut surface extending laterally beyond the connecting region, in that in the two floor covering elements (1, 2) laid adjacent to one another, at least one recess (8, 9, 17) of the first floor covering element with the connecting region is arranged in alignment with the connecting region of an associated recess (8, 9, 17) of the second floor covering element, and that the at least one connecting element, starting from the respective support surface of the first and second floor covering elements (1, 2), is arranged in the two recesses (8, 9, 17) of the first and second floor covering elements (1, 2) arranged in alignment, wherein the connecting element in each case comprises an anchoring portion on two opposite end regions and the two anchoring portions are connected to one another by means of a connecting portion, and wherein each anchoring portion of the connecting element is form-fittingly secured on the respective undercut surface in the associated anchoring region of the recess (8, 9, 17) of the first and second floor covering elements (1, 2), characterized in that a pressure plate laterally projecting beyond the bottom side of the connecting element is arranged on an bottom side of the connecting element facing the support surface of the floor covering elements (1, 2).
Enclomiphene citrate of formula: having needle shaped crystal habit, and having - melting point of 150°C as measured by DSC (onset), or - a characteristic X-ray powder diffraction pattern with characteristic peaks expressed in 2-Theta values (2θ) at: 5.8, 11.5. - melting point of 150°C as measured by DSC (onset), or - a characteristic X-ray powder diffraction pattern with characteristic peaks expressed in 2-Theta values (2θ) at: 5.8, 11.5.
An optical display body (1; 2; 3; 4) capable of manifesting a visible image (21B; M), the optical display body (1; 2; 3; 4) comprising: a stripe mask including a transmission part and a reflection part that is wider than the transmission part, the transmission part and the reflection part being alternately arranged so as to form a stripe pattern; and a printed body including a flattened design that is the visible image (21B; M) flattened in a first direction, the flattened design being printed on the printed body two or more times repeatedly in a second direction orthogonal to the first direction, the stripe mask including: a first stripe pattern region in which a transmission part (Ta) having a first width (Wta) is arranged; and a second stripe pattern region in which a transmission part (Tb) having a second width (Wtb) that is larger than the first width (Wta) is arranged, and the stripe mask, upon being superimposed on the printed body such that a stripe direction of the stripe mask will be coincident with the second direction of the printed body, allowing the visible image (21B; M) to be displayed through the stripe mask, wherein the first stripe pattern region has a stripe pitch (Wtotala) which is equal to a stripe pitch (Wtotalb) in the second stripe pattern region and which differs from an integral multiple of an arrangement pitch of the flattened design in the second direction. a stripe mask including a transmission part and a reflection part that is wider than the transmission part, the transmission part and the reflection part being alternately arranged so as to form a stripe pattern; and a printed body including a flattened design that is the visible image (21B; M) flattened in a first direction, the flattened design being printed on the printed body two or more times repeatedly in a second direction orthogonal to the first direction, the stripe mask including: a first stripe pattern region in which a transmission part (Ta) having a first width (Wta) is arranged; and a second stripe pattern region in which a transmission part (Tb) having a second width (Wtb) that is larger than the first width (Wta) is arranged, and a first stripe pattern region in which a transmission part (Ta) having a first width (Wta) is arranged; and a second stripe pattern region in which a transmission part (Tb) having a second width (Wtb) that is larger than the first width (Wta) is arranged, and the stripe mask, upon being superimposed on the printed body such that a stripe direction of the stripe mask will be coincident with the second direction of the printed body, allowing the visible image (21B; M) to be displayed through the stripe mask, wherein the first stripe pattern region has a stripe pitch (Wtotala) which is equal to a stripe pitch (Wtotalb) in the second stripe pattern region and which differs from an integral multiple of an arrangement pitch of the flattened design in the second direction.
Motor vehicle, comprising: - two longitudinally offset axles, respectively referred to as the front axle and rear axle, each axle carrying at least one wheel fitted with a tyre (8, 10, 16, 18); - at least one rear bumper defining an internal cavity which is open towards the front of the said vehicle; and - at least one microphone comprising a sound pickup component (43, 44) intended for the acquisition of a sound signal generated by at least one tyre (8, 10, 16, 18) carried by a wheel of one of the axles, this tyre optionally comprising at least one audible wear indicator, characterized in that the said microphone is fixed to a wall of the rear bumper so that the sound pickup component (43, 44) of the said microphone is arranged transversely between the two tyres (16, 18) of the wheels of the rear axle. - two longitudinally offset axles, respectively referred to as the front axle and rear axle, each axle carrying at least one wheel fitted with a tyre (8, 10, 16, 18); - at least one rear bumper defining an internal cavity which is open towards the front of the said vehicle; and - at least one microphone comprising a sound pickup component (43, 44) intended for the acquisition of a sound signal generated by at least one tyre (8, 10, 16, 18) carried by a wheel of one of the axles, this tyre optionally comprising at least one audible wear indicator,
A composition for its use in preventing or reducing dandruff comprising a therapeutically or prophylactically effective amount of an Epilobium angustifolium extract.
A solar cell comprising: a semiconductor substrate; a first semiconductor region (120, 120') positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type; a first electrode (140, 140') connected to the first semiconductor region; and a second electrode (150, 150') connected to the back surface of the semiconductor substrate, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate, wherein the second electrode formed of the metal foil includes: a contact portion (150a, 150'a) contacting the back surface of the semiconductor substrate; and a non-contact portion (150b, 150'b) that is spaced apart from the back surface of the semiconductor substrate to form the air gap between the second electrode and the back surface of the semiconductor substrate, characterized in that the contact portion of the second electrode formed of the metal foil is further recessed toward the semiconductor substrate than the non-contact portion. a semiconductor substrate; a first semiconductor region (120, 120') positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type; a first electrode (140, 140') connected to the first semiconductor region; and a second electrode (150, 150') connected to the back surface of the semiconductor substrate, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate, wherein the second electrode formed of the metal foil includes: a contact portion (150a, 150'a) contacting the back surface of the semiconductor substrate; and a non-contact portion (150b, 150'b) that is spaced apart from the back surface of the semiconductor substrate to form the air gap between the second electrode and the back surface of the semiconductor substrate, characterized in that the contact portion of the second electrode formed of the metal foil is further recessed toward the semiconductor substrate than the non-contact portion. a contact portion (150a, 150'a) contacting the back surface of the semiconductor substrate; and a non-contact portion (150b, 150'b) that is spaced apart from the back surface of the semiconductor substrate to form the air gap between the second electrode and the back surface of the semiconductor substrate, characterized in that the contact portion of the second electrode formed of the metal foil is further recessed toward the semiconductor substrate than the non-contact portion.