A semiconductor module (, comprising: a plurality of base plates ((104, 104a to 104f), each being formed into a plate shape from a conductive material; power terminals (110 to 112, 140 to 143) to be extended from the plurality of base plates; lands (11a to 11g), which are parts of the plurality of base plates, and are to be used for placement and connection of elements; switching elements (101U, 102U) to be put on and connected to the lands to control a current flowing in the power terminals (110 to 112, 140 to 143); and a shunt resistor (103U, 103V) to be put on and connected to part of the lands, wherein the lands on which the shunt resistor is put and to which the shunt resistor is connected have slits (130 to 132) formed so as to cut the lands into a main electric circuit in which a main current flows and detection-use terminals (123, 124, 129a, 129b) configured to detect electric potentials of electrodes of the shunt resistor, and wherein the slits have leading end portions extending to vicinity of the electrodes of the shunt resistor, wherein the power terminals (110 to 112, 140 to 143) are aligned to form a line of power terminals (110 to 112, 140 to 143), wherein the semiconductor module ( further comprises a line of control terminals formed of low-power terminals (120 to 124, 125 to 129a, 129b), which are used for controlling said switching elements and for detecting the electric potentials of the electrodes of the shunt resistor, and are aligned with respect to a side opposed to the line of power terminals (110 to 112, 140 to 143), and wherein the shunt resistor is placed on a side where the line of power terminals (110 to 112, 140 to 143) is located. a plurality of base plates ((104, 104a to 104f), each being formed into a plate shape from a conductive material; power terminals (110 to 112, 140 to 143) to be extended from the plurality of base plates; lands (11a to 11g), which are parts of the plurality of base plates, and are to be used for placement and connection of elements; switching elements (101U, 102U) to be put on and connected to the lands to control a current flowing in the power terminals (110 to 112, 140 to 143); and a shunt resistor (103U, 103V) to be put on and connected to part of the lands, wherein the lands on which the shunt resistor is put and to which the shunt resistor is connected have slits (130 to 132) formed so as to cut the lands into a main electric circuit in which a main current flows and detection-use terminals (123, 124, 129a, 129b) configured to detect electric potentials of electrodes of the shunt resistor, and wherein the slits have leading end portions extending to vicinity of the electrodes of the shunt resistor, wherein the power terminals (110 to 112, 140 to 143) are aligned to form a line of power terminals (110 to 112, 140 to 143), wherein the semiconductor module ( further comprises a line of control terminals formed of low-power terminals (120 to 124, 125 to 129a, 129b), which are used for controlling said switching elements and for detecting the electric potentials of the electrodes of the shunt resistor, and are aligned with respect to a side opposed to the line of power terminals (110 to 112, 140 to 143), and wherein the shunt resistor is placed on a side where the line of power terminals (110 to 112, 140 to 143) is located.