A light emitting diode comprising: a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the substrate, the light emitting structure exposing a portion of the first conductivity type semiconductor layer upward; a light transmissive electrode having a stepped portion on the second conductivity type semiconductor layer; a second electrode on the light transmissive electrode; and a first electrode on the exposed first conductivity type semiconductor layer, wherein the light transmissive electrode comprises a first light transmissive electrode section which is disposed on the mesa edge region of the light emitting structure, and a second light transmissive electrode section which is disposed on an edge region of the light emitting structure, and wherein the second electrode is disposed not on the first light transmissive electrode section but on the second light transmissive electrode section, characterized in that the light emitting diode further comprises a dielectric layer disposed on the stepped portion of the light transmissive electrode; and that the stepped portion comprises a plurality of recesses having rectangular shapes and a plurality of protrusions having rectangular shapes, wherein each of height of the plurality of protrusions from a top surface of the light emitting structure is same, and wherein each of height of the plurality of recesses from the top surface of the light emitting structure gradually decreases toward the mesa edge region of the light emitting structure. a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the substrate, the light emitting structure exposing a portion of the first conductivity type semiconductor layer upward; a light transmissive electrode having a stepped portion on the second conductivity type semiconductor layer; a second electrode on the light transmissive electrode; and a first electrode on the exposed first conductivity type semiconductor layer, wherein the light transmissive electrode comprises a first light transmissive electrode section which is disposed on the mesa edge region of the light emitting structure, and a second light transmissive electrode section which is disposed on an edge region of the light emitting structure, and wherein the second electrode is disposed not on the first light transmissive electrode section but on the second light transmissive electrode section, characterized in that the light emitting diode further comprises a dielectric layer disposed on the stepped portion of the light transmissive electrode; and that the stepped portion comprises a plurality of recesses having rectangular shapes and a plurality of protrusions having rectangular shapes, wherein each of height of the plurality of protrusions from a top surface of the light emitting structure is same, and wherein each of height of the plurality of recesses from the top surface of the light emitting structure gradually decreases toward the mesa edge region of the light emitting structure.