An ion beam sample preparation thermal management apparatus comprising: a) an ion beam irradiating means disposed in a vacuum chamber and directing an ion beam toward a shield; b) a shield retention stage (40, 50) disposed in the vacuum chamber; said shield retention stage comprising: i) a first datum feature; ii) a second datum feature; iii) a shield retention means having at least a shield releasing position and a shield retaining position; c) a thermal transfer member in thermally conductive contact with said shield retention stage; d) a heat sink means configured to conduct heat away from said thermal transfer member; e) the shield having at least a rigid planar portion, said shield being removeably, such as for observation in a microscope, and replaceably held in said shield retention stage, said shield further comprising: i) a proximal sample surface configured to durably adhere the sample to the shield; ii) a first shielding surface disposed in the path of the ion beam and positioned to shield a portion of the ion beam directed at the sample when said shield is held in the shield retaining position of the shield retention means; iii) a third datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said third datum feature to abut in thermally conductive contact said first datum feature; and, iv) a fourth datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said fourth datum feature to abut said second datum feature, whereby the datum features (70a, 70b, 70c, 70d) on both the shield and the shield retention stage ensure that the shield may be retained in substantially the same position and orientation each time a sample is processed; and wherein the proximal sample surface has at least one recessed portion configured for the flowing of adhesive between the shield and the sample. a) an ion beam irradiating means disposed in a vacuum chamber and directing an ion beam toward a shield; b) a shield retention stage (40, 50) disposed in the vacuum chamber; said shield retention stage comprising: i) a first datum feature; ii) a second datum feature; iii) a shield retention means having at least a shield releasing position and a shield retaining position; i) a first datum feature; ii) a second datum feature; iii) a shield retention means having at least a shield releasing position and a shield retaining position; c) a thermal transfer member in thermally conductive contact with said shield retention stage; d) a heat sink means configured to conduct heat away from said thermal transfer member; e) the shield having at least a rigid planar portion, said shield being removeably, such as for observation in a microscope, and replaceably held in said shield retention stage, said shield further comprising: i) a proximal sample surface configured to durably adhere the sample to the shield; ii) a first shielding surface disposed in the path of the ion beam and positioned to shield a portion of the ion beam directed at the sample when said shield is held in the shield retaining position of the shield retention means; iii) a third datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said third datum feature to abut in thermally conductive contact said first datum feature; and, iv) a fourth datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said fourth datum feature to abut said second datum feature, whereby the datum features (70a, 70b, 70c, 70d) on both the shield and the shield retention stage ensure that the shield may be retained in substantially the same position and orientation each time a sample is processed; and wherein the proximal sample surface has at least one recessed portion configured for the flowing of adhesive between the shield and the sample. i) a proximal sample surface configured to durably adhere the sample to the shield; ii) a first shielding surface disposed in the path of the ion beam and positioned to shield a portion of the ion beam directed at the sample when said shield is held in the shield retaining position of the shield retention means; iii) a third datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said third datum feature to abut in thermally conductive contact said first datum feature; and, iv) a fourth datum feature formed integrally with said shield, wherein said shield retention means in said shield retaining position urges said fourth datum feature to abut said second datum feature, whereby the datum features (70a, 70b, 70c, 70d) on both the shield and the shield retention stage ensure that the shield may be retained in substantially the same position and orientation each time a sample is processed; and wherein the proximal sample surface has at least one recessed portion configured for the flowing of adhesive between the shield and the sample. whereby the datum features (70a, 70b, 70c, 70d) on both the shield and the shield retention stage ensure that the shield may be retained in substantially the same position and orientation each time a sample is processed; and wherein the proximal sample surface has at least one recessed portion configured for the flowing of adhesive between the shield and the sample.