Method for producing a piezoelectric transducer device, comprising at least: - producing, on a face of a first substrate, first and second separation layers (132, 134) arranged one against the other and such that the first separation layer is arranged between the first substrate and the second separation layer; - producing, on the second separation layer, at least one piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure; - making the piezoelectric layer integral with a second substrate, forming a stack of different materials in which the piezoelectric layer is arranged between the second substrate and the second separation layer, and in which at least one membrane including at least one silicon and/or silicon nitride layer is arranged between the piezoelectric layer and the second substrate such that the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer of the membrane, or that the piezoelectric layer is in contact with the silicon and/or silicon nitride layer of the membrane solely through one or more electrically conductive layers; - mechanical separation at an interface between the first and second separation layers (132, 134), such that the first separation layer remains integral with the first substrate and that the second separation layer remains integral with the piezoelectric layer; further comprising, in the course of the method, the production of first and second electrodes (112, 118, 120, 122) electrically in contact with the piezoelectric layer, and in which the materials of the stack are chosen such that the interface between the first and second separation layers (132, 134) corresponds to that, among all the interfaces of the stack, having the lowest adherence force, and in which: - one of the first and second separation layers (132, 134) comprises at least SiO 2 and/or silicon nitride and the other of the first and second separation layers (132, 134) comprises at least one noble metal, and/or - the method comprises, between the step of producing the first and second separation layers (132, 134) and the making integral step, the implementation of at least one step reducing an initial adherence force of the interface between the first and second separation layers (132, 134). - producing, on a face of a first substrate, first and second separation layers (132, 134) arranged one against the other and such that the first separation layer is arranged between the first substrate and the second separation layer; - producing, on the second separation layer, at least one piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure; - making the piezoelectric layer integral with a second substrate, forming a stack of different materials in which the piezoelectric layer is arranged between the second substrate and the second separation layer, and in which at least one membrane including at least one silicon and/or silicon nitride layer is arranged between the piezoelectric layer and the second substrate such that the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer of the membrane, or that the piezoelectric layer is in contact with the silicon and/or silicon nitride layer of the membrane solely through one or more electrically conductive layers; - mechanical separation at an interface between the first and second separation layers (132, 134), such that the first separation layer remains integral with the first substrate and that the second separation layer remains integral with the piezoelectric layer; further comprising, in the course of the method, the production of first and second electrodes (112, 118, 120, 122) electrically in contact with the piezoelectric layer, and in which the materials of the stack are chosen such that the interface between the first and second separation layers (132, 134) corresponds to that, among all the interfaces of the stack, having the lowest adherence force, and in which: - one of the first and second separation layers (132, 134) comprises at least SiO 2 and/or silicon nitride and the other of the first and second separation layers (132, 134) comprises at least one noble metal, and/or - the method comprises, between the step of producing the first and second separation layers (132, 134) and the making integral step, the implementation of at least one step reducing an initial adherence force of the interface between the first and second separation layers (132, 134). - one of the first and second separation layers (132, 134) comprises at least SiO 2 and/or silicon nitride and the other of the first and second separation layers (132, 134) comprises at least one noble metal, and/or - the method comprises, between the step of producing the first and second separation layers (132, 134) and the making integral step, the implementation of at least one step reducing an initial adherence force of the interface between the first and second separation layers (132, 134).