A memory on an integrated circuit (410, 470), comprising: an array (412, 472) of memory cells including rows and columns, the array (412, 472) including segmented word lines along the rows; a circuitry (430, 490) to connect bias voltages to segments of the segmented word lines to induce current flow for thermal anneal; and bit lines (2310a, 2310b, 2510a, 2510b) along corresponding columns wherein the segments of the segmented word lines comprise local word lines (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) and characterized in that the circuitry (430, 490) to connect bias voltages includes: first switches (2262L, 2362L, 2562L) and second switches (2262R, 2362R, 2562R) coupled to corresponding ends of the segments of the segmented word lines; and a plurality of pairs of global word lines (2260L, 2260R, 2360L, 2360R, 2560L, 2560R) along corresponding rows, the pairs of global word lines (2360L, 2360R, 2360L, 2360R, 2560L, 2560R) including a first global word line (2260L, 2360L, 2560L) coupled to one of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on a given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows and a second global word line (2260R, 2360R, 2560R) coupled to another of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on said given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows. an array (412, 472) of memory cells including rows and columns, the array (412, 472) including segmented word lines along the rows; a circuitry (430, 490) to connect bias voltages to segments of the segmented word lines to induce current flow for thermal anneal; and bit lines (2310a, 2310b, 2510a, 2510b) along corresponding columns wherein the segments of the segmented word lines comprise local word lines (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) and characterized in that the circuitry (430, 490) to connect bias voltages includes: first switches (2262L, 2362L, 2562L) and second switches (2262R, 2362R, 2562R) coupled to corresponding ends of the segments of the segmented word lines; and a plurality of pairs of global word lines (2260L, 2260R, 2360L, 2360R, 2560L, 2560R) along corresponding rows, the pairs of global word lines (2360L, 2360R, 2360L, 2360R, 2560L, 2560R) including a first global word line (2260L, 2360L, 2560L) coupled to one of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on a given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows and a second global word line (2260R, 2360R, 2560R) coupled to another of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on said given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows. first switches (2262L, 2362L, 2562L) and second switches (2262R, 2362R, 2562R) coupled to corresponding ends of the segments of the segmented word lines; and a plurality of pairs of global word lines (2260L, 2260R, 2360L, 2360R, 2560L, 2560R) along corresponding rows, the pairs of global word lines (2360L, 2360R, 2360L, 2360R, 2560L, 2560R) including a first global word line (2260L, 2360L, 2560L) coupled to one of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on a given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows and a second global word line (2260R, 2360R, 2560R) coupled to another of the first and second switches (2262L, 2262R, 2362L, 2362R, 2562L, 2562R) on said given local word line (2230a, 2230b, 2230c, 2530a, 2530b, 2530c) along the corresponding rows.