mhurhangee/ep-ind-claims huggingface dataset:
A front attachment for a self-propelled combine harvester for harvesting corn, having a plurality of intake and picking devices, which respectively comprise a picking gap constructed from two picking plates which are spaced apart, picking rollers which are disposed in pairs below the picking gap and which are driven in opposite directions, and a chopping assembly disposed below the picking rollers, and wherein a conveyor star having at least one rotatably driven picking finger is associated with the upper side of the picking gap in a manner such that the picking finger picks up crop and conveys it along the picking gap, wherein the conveyor star accommodates the at least one picking finger in a rotatably movable manner and the rotational movement is executed by means of an eccentric gear control, characterized in that the eccentric gear control has a drive shaft and an output shaft, wherein the drive shaft is mounted on a first rotational element so as to be unable to rotate and the output shaft is rotatably mounted on a second rotational element, wherein the picking finger is respectively rotatably mounted about a first and a second finger axis of rotation (19, 20), wherein the first finger axis of rotation is disposed on the first rotational element and the second finger axis of rotation is disposed on the second rotational element, wherein the first and the second finger axis of rotation (19, 20) have an eccentric offset with respect to each other and the drive shaft and the output shaft have the same eccentric offset with respect to each other.
Front end of a swivel-head trailer, comprising a frame, a carrying axle supporting the running wheels of the front end and connected to the frame, a drawbar connected rigidly to the frame, a seat in the form of a swivel head for connecting a second part of the trailer to the front end, where this seat is arranged in front of the carrying axle and is mounted movably to tilt around a horizontal tipping axle running at right angles to the direction of travel, the tipping axle is arranged lower than the upper edge of the frame, the frame has two longitudinal supports running adjacent to one another, two semi-shafts aligned with one another forming the tipping axle and where each of the semi-shafts is mounted on a longitudinal support.
An oral care composition comprising mucin-coated silica particles, wherein the silica is selected from the group consisting of silica having: an N 2 BET of 360-410 m 2 /g and an average particle size of 2-20 microns; an N 2 BET of 30-50 m 2 /g and an average particle size of 8-12 microns; an N 2 BET of 50-70 m 2 /g and an average particle size of 8-15 microns; an N 2 BET of 100-160 m 2 /g and an average particle size of 10-16 microns; or combinations thereof; one or more selected from: zinc oxide, a zinc salt, a copper salt and a stannous salt; and a basic amino acid, selected from: lysine and arginine. an N 2 BET of 360-410 m 2 /g and an average particle size of 2-20 microns; an N 2 BET of 30-50 m 2 /g and an average particle size of 8-12 microns; an N 2 BET of 50-70 m 2 /g and an average particle size of 8-15 microns; an N 2 BET of 100-160 m 2 /g and an average particle size of 10-16 microns; or combinations thereof; one or more selected from: zinc oxide, a zinc salt, a copper salt and a stannous salt; and a basic amino acid, selected from: lysine and arginine.
A method for modifying a target genomic locus in a mouse embryonic stem cell, comprising: (a) introducing into the mouse ES cell: (i) a zinc finger nuclease that makes a double-strand break at or near a target genomic locus; and (ii) a large targeting vector (LTVEC) comprising an insert nucleic acid flanked by an upstream homology arm and a downstream homology arm, wherein the insert nucleic acid ranges from 5 kb to 30 kb in length, wherein the sum total of the upstream and downstream homology arms is at least 10 kb in length, wherein the upstream and downstream homology arms are between 5 kb and 200 kb in length, and wherein the LTVEC ranges from 50 kb to 300 kb in length; and (b) selecting a targeted mouse ES cell comprising the insert nucleic acid in the target genomic locus, wherein integration of the insert nucleic acid into the target genomic locus results in replacement of an endogenous nucleic acid sequence at the target genomic locus with the insert nucleic acid. (a) introducing into the mouse ES cell: (i) a zinc finger nuclease that makes a double-strand break at or near a target genomic locus; and (ii) a large targeting vector (LTVEC) comprising an insert nucleic acid flanked by an upstream homology arm and a downstream homology arm, wherein the insert nucleic acid ranges from 5 kb to 30 kb in length, wherein the sum total of the upstream and downstream homology arms is at least 10 kb in length, wherein the upstream and downstream homology arms are between 5 kb and 200 kb in length, and wherein the LTVEC ranges from 50 kb to 300 kb in length; and (i) a zinc finger nuclease that makes a double-strand break at or near a target genomic locus; and (ii) a large targeting vector (LTVEC) comprising an insert nucleic acid flanked by an upstream homology arm and a downstream homology arm, (b) selecting a targeted mouse ES cell comprising the insert nucleic acid in the target genomic locus, wherein integration of the insert nucleic acid into the target genomic locus results in replacement of an endogenous nucleic acid sequence at the target genomic locus with the insert nucleic acid.
A device for rendering an image in a graphics processing system, the image being divided into a plurality of tiles, each tile corresponding to one or more display pixels and at least some of the tiles containing at least one primitive of an object, which was binned into the respective tile during a binning pass of the image, the device being configured to: calculate (Step 701), for a tile, in dependence on the prominence of the tile, a scale factor for the respective tile; and, for at least some of the tiles: shrink (Step 702) the primitive(s) of the tile to a sub-area of the tile, the site of the sub-area being dependent on the calculated scale factor for the tile; render (Step 703) the whole tile to form an intermediate image; and generate (Step 704) display pixels by upscaling the intermediate image; characterized in that the device is configured to calculate the scale factor based at least in part on a minimum depth value of the respective tile; wherein the minimum depth value is a minimum z distance of the tile to the camera, wherein the minimum z distance of the tile is determined and stored during the binning pass of the image; and the larger the tile's minimum depth the smaller the tile's scale factor is and the scale factor is less than one. shrink (Step 702) the primitive(s) of the tile to a sub-area of the tile, the site of the sub-area being dependent on the calculated scale factor for the tile; render (Step 703) the whole tile to form an intermediate image; and generate (Step 704) display pixels by upscaling the intermediate image; characterized in that the device is configured to calculate the scale factor based at least in part on a minimum depth value of the respective tile; wherein the minimum depth value is a minimum z distance of the tile to the camera, wherein the minimum z distance of the tile is determined and stored during the binning pass of the image; and the larger the tile's minimum depth the smaller the tile's scale factor is and the scale factor is less than one.
Method for the load-free opening of a clutch, the method having the following steps: - receiving a declutching signal; - applying a negative torque by means of a drive machine to the clutch (S9a, S9b), wherein the negative torque is generated by setting a freewheel of the drive machine or by means of active short-circuiting of the drive machine, wherein the negative torque is lower than a torque of an output side; - applying a positive predefined torque by means of the drive machine to the clutch, wherein the positive torque of the drive machine is greater than the torque of the output side; and - opening the clutch as soon as the absolute value of the torque applied to the clutch is within predefined limiting values. - receiving a declutching signal; - applying a negative torque by means of a drive machine to the clutch (S9a, S9b), wherein the negative torque is generated by setting a freewheel of the drive machine or by means of active short-circuiting of the drive machine, wherein the negative torque is lower than a torque of an output side; - applying a positive predefined torque by means of the drive machine to the clutch, wherein the positive torque of the drive machine is greater than the torque of the output side; and - opening the clutch as soon as the absolute value of the torque applied to the clutch is within predefined limiting values.
A mode switching control method of an air conditioner, wherein the air conditioner comprises an outdoor unit and an indoor unit, the outdoor unit comprises a compressor, a first end of the outdoor unit is connected to a first end of the indoor unit with a throttling element, a second end of the indoor unit is connected to a second end of the outdoor unit with a liquid storage tank, the method comprises: in response to switching the indoor unit to a refrigerating mode, obtaining an outlet superheat degree of the liquid storage tank, and determining whether the outlet superheat degree is less than a first preset threshold; in response to the outlet superheat degree being less than the first preset threshold, turning down opening of the throttling element until the outlet superheat degree is greater than a second preset threshold, wherein the second preset threshold is greater than the first preset threshold, characterised by: further in response to the outlet superheat degree being less than the first preset threshold, adjusting a saturation temperature corresponding to a target suction pressure of the compressor according to the outlet superheat degree, and controlling the compressor according to adjusted saturation temperature. in response to switching the indoor unit to a refrigerating mode, obtaining an outlet superheat degree of the liquid storage tank, and determining whether the outlet superheat degree is less than a first preset threshold; in response to the outlet superheat degree being less than the first preset threshold, turning down opening of the throttling element until the outlet superheat degree is greater than a second preset threshold, wherein the second preset threshold is greater than the first preset threshold, characterised by: further in response to the outlet superheat degree being less than the first preset threshold, adjusting a saturation temperature corresponding to a target suction pressure of the compressor according to the outlet superheat degree, and controlling the compressor according to adjusted saturation temperature.
A fluid transport system, comprising: a compressor configured to increase a pressure of a fluid flow passing therethrough; an anti-surge flow recirculation loop configured to selectively redirect a part of the fluid flow passing through the compressor from a discharge output of the compressor to an input of the compressor; and a controller connected to the anti-surge flow recirculation loop and the compressor, and configured (i) to detect a surge event based on an evolution of a discharge pressure of the compressor, a rate of the discharge pressure, and a rate of change of the rate of the discharge pressure, and (ii) to relocate a surge margin characterizing an operation of the fluid transport system, based on a surge parameter value recorded at a beginning of the surge event. a compressor configured to increase a pressure of a fluid flow passing therethrough; an anti-surge flow recirculation loop configured to selectively redirect a part of the fluid flow passing through the compressor from a discharge output of the compressor to an input of the compressor; and a controller connected to the anti-surge flow recirculation loop and the compressor, and configured (i) to detect a surge event based on an evolution of a discharge pressure of the compressor, a rate of the discharge pressure, and a rate of change of the rate of the discharge pressure, and (ii) to relocate a surge margin characterizing an operation of the fluid transport system, based on a surge parameter value recorded at a beginning of the surge event.
A method for channel encoding using a Low-Density Parity-Check, LDPC, code, the LDPC code having a parity check matrix comprising an information part and a parity part, the information part comprising column groups having equal Length M 1, the method comprising: determining a number of parity bits for puncturing; forming parity bit sets from dividing the parity bits at predetermined intervals; determining a number of parity bit sets to be punctured based on the number of parity bits for puncturing; and puncturing parity bits based on the determined number of parity bit sets to be punctured, and according to a predetermined order of parity bit sets to be punctured, wherein the order of parity bit sets to be punctured is determined as 6, 4, 13, 9, 18, 8, 15, 20, 5, 17, 2, 22, 24, 7, 12, 1, 16, 23, 14, 0, 21, 10, 19, 11, 3, when a codeword length of an LDPC codeword, N 1, is 16200, an information length, K 1, is 7200, a modulation scheme is 16 Quadrature Amplitude Modulation, QAM, and the number of parity bits per parity bit set, M 1, is 360 parity bits, wherein the parity bit sets are formed by below equation; P j = p k | j ≡ k mod q, 0 ≤ k < N 1 - K 1, where P j denotes the j th parity bit set, P k denotes the K th parity bit q is a value satisfying q = ( N 1 - K 1) / M 1, where K 1 / M 1 is an integer, and 0 ≤ j < q. determining a number of parity bits for puncturing; forming parity bit sets from dividing the parity bits at predetermined intervals; determining a number of parity bit sets to be punctured based on the number of parity bits for puncturing; and puncturing parity bits based on the determined number of parity bit sets to be punctured, and according to a predetermined order of parity bit sets to be punctured, wherein the order of parity bit sets to be punctured is determined as 6, 4, 13, 9, 18, 8, 15, 20, 5, 17, 2, 22, 24, 7, 12, 1, 16, 23, 14, 0, 21, 10, 19, 11, 3, when a codeword length of an LDPC codeword, N 1, is 16200, an information length, K 1, is 7200, a modulation scheme is 16 Quadrature Amplitude Modulation, QAM, and the number of parity bits per parity bit set, M 1, is 360 parity bits, wherein the parity bit sets are formed by below equation; P j = p k | j ≡ k mod q, 0 ≤ k < N 1 - K 1, where P j denotes the j th parity bit set, P k denotes the K th parity bit
An apparatus comprising: a tubular to operate downhole, the tubular having a longitudinal axis and having a cutout (210A, 210N, 800, 900) that has a direction that is other than 0 degrees to the longitudinal axis of the tubular; an antenna (202A, 202N, 802, 902) positioned in the cutout of the tubular, the antenna to perform at least one of a transmission or reception of an electromagnetic signal that has a path that is to traverse a subsurface formation; and characterised in that a surface of at least one sidewall of the cutout is non-perpendicular to the longitudinal axis of the tubular, wherein the surface of each wall of the cutout is convergent or divergent. a tubular to operate downhole, the tubular having a longitudinal axis and having a cutout (210A, 210N, 800, 900) that has a direction that is other than 0 degrees to the longitudinal axis of the tubular; an antenna (202A, 202N, 802, 902) positioned in the cutout of the tubular, the antenna to perform at least one of a transmission or reception of an electromagnetic signal that has a path that is to traverse a subsurface formation; and characterised in that a surface of at least one sidewall of the cutout is non-perpendicular to the longitudinal axis of the tubular, wherein the surface of each wall of the cutout is convergent or divergent.
A solar cell element comprising: a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearest to a first principal surface side and the second semiconductor region is located nearest to a second principal surface side; and a first passivation film containing aluminum oxide and disposed on the first semiconductor region on the first principal surface side, wherein in an inside of the first passivation film, a first ratio obtained by dividing an aluminum atomic density by an oxygen atomic density is 0.613 or more and less than 0.667, and a second ratio obtained by dividing a sum of the aluminum atomic density and a hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786, and wherein the first passivation film contains aluminum oxide, hydrogen, and carbon, and wherein a third ratio in the central portion in the thickness direction of the first passivation film is less than 1, the third ratio being obtained by dividing the hydrogen atomic density by a carbon atomic density in the first passivation film. a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearest to a first principal surface side and the second semiconductor region is located nearest to a second principal surface side; and a first passivation film containing aluminum oxide and disposed on the first semiconductor region on the first principal surface side, wherein in an inside of the first passivation film, a first ratio obtained by dividing an aluminum atomic density by an oxygen atomic density is 0.613 or more and less than 0.667, and a second ratio obtained by dividing a sum of the aluminum atomic density and a hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786, and wherein the first passivation film contains aluminum oxide, hydrogen, and carbon, and wherein a third ratio in the central portion in the thickness direction of the first passivation film is less than 1, the third ratio being obtained by dividing the hydrogen atomic density by a carbon atomic density in the first passivation film.
A machining program creating device for a wire electric discharge machine, configured to create a machining program for machining a keyway on a side surface of a round hole in a workpiece, the machining program creating device comprising: a keyway defining section configured to define a shape of the keyway to be machined; a hole diameter specification section configured to specify a diameter of the round hole; and a machining program creating section configured to create a machining program for measuring a center position of the round hole by bringing a wire electrode into contact with the workpiece and for machining the keyway, based on the measured center position of the round hole, the shape of the keyway defined by the keyway defining section, and the diameter of the round hole specified by the hole diameter specification section, wherein the machining program creating section is configured to create the machining program for such a machining path that an opening of the keyway is kept from becoming narrow, and wherein the machining program creating section is configured to create the machining program so that the wire electrode advances from a bottom portion of the keyway toward the opening (32, 34) along the machining path for machining side surfaces (35, 37) of the keyway, on either side of the keyway. a keyway defining section configured to define a shape of the keyway to be machined; a hole diameter specification section configured to specify a diameter of the round hole; and a machining program creating section configured to create a machining program for measuring a center position of the round hole by bringing a wire electrode into contact with the workpiece and for machining the keyway, based on the measured center position of the round hole, the shape of the keyway defined by the keyway defining section, and the diameter of the round hole specified by the hole diameter specification section, wherein the machining program creating section is configured to create the machining program for such a machining path that an opening of the keyway is kept from becoming narrow, and wherein the machining program creating section is configured to create the machining program so that the wire electrode advances from a bottom portion of the keyway toward the opening (32, 34) along the machining path for machining side surfaces (35, 37) of the keyway, on either side of the keyway.
A device (228, 242) for pressurizing an ear canal, comprising: a first ear cup for enclosing a first external ear, the first ear cup having a first sealing member for fluidly sealing around the first external ear, the first ear cup having a first port for fluid communication with an ear canal of the sealed first external ear; a second ear cup for enclosing a second external ear, the second ear cup having a second sealing member for fluidly sealing around the second external ear, the second ear cup having a second port for fluid communication with an ear canal of the sealed second external ear; and a headpiece connected to each ear cup, the headpiece (240, 244) configured for applying sealing pressure to each sealing member and retaining each ear cup on each respective external ear, characterized in that the device further comprises a first pump device coupled to the first port for applying superatinospheric pressure to the ear canal of the first external ear and a second pump device coupled to the second pressure port for applying superatmospheric pressure to the ear canal of the second external ear.
Connector for connecting two housing parts (11, 12), wherein a first connector part is designed for arranging on a first housing part and a second connector part is designed for arranging on a second housing part, wherein the first connector part has at least one spring element and a first snap-action element and the second connector part has a first latching element, wherein the at least one spring element has a foot point for connecting to the first housing part, and wherein the first snap-action element is configured to interact with the first latching element, when the first housing part is connected to the second housing part, in such a manner that, when the first connector part and the second connector part are moved towards each other along a connecting direction, the first snap-action element is pushed over the first latching element by deflection of the at least one spring element, characterized in that the first latching element and the first snap-action element, assisted by a restoring force of the at least one spring element, are subsequently connected in a form-fitting and force-fitting manner, wherein the first connector part furthermore has a second snap-action element and the second connector part furthermore has a second latching element, wherein the second snap-action element and the second latching element are configured in such a manner that, when the first connector part and the second connector part are moved towards each other, the second snap-action element is pushed over the second latching element by deflection of the at least one spring element, wherein the second latching element and the second snap-action element are formed in such a manner that, when the first connector part and the second connector part are moved apart counter to the connecting direction, a form-fitting connection is formed, preventing the second snap-action element from sliding back over the second latching element.