Optically pumped ultrashort pulse microchip laser for generating femto- or picosecond pulses, in particular with pulse durations of less than 30 ps, less than 10 ps or less than 1 ps, having at least • a substrate (2, 2a, 2b, 2c, 2d, 2e), in particular of vanadate, • an amplifying laser medium for generating the laser emission, in particular doped vanadate, preferably Nd:vanadate with a doping of more than 1% Nd, • a first resonator mirror (3, 3a, 3b, 3c) at least partially transparent for optical pump radiation, • a component for generating a laser emission with femto- or picosecond pulse characteristics, in particular a saturable absorber structure, constructed and arranged such that the ultrashort pulse microchip laser is Q-switched, wherein • the substrate (2, 2a, 2b, 2c, 2d, 2e) and the laser medium are formed from the same material and the substrate (2, 2a, 2b, 2c, 2d, 2e) is doped to a lower level than the laser medium, in particular undoped, and • the substrate (2, 2a, 2b, 2c, 2d, 2e), the laser medium and the first resonator mirror (3, 3a, 3b, 3c), in particular the component for generating a laser emission with femto- or picosecond pulse characteristics, are connected to one another, wherein • the laser medium has a thickness in the direction of laser emission of less than 200 μm, in particular less than 100 μm, • the first resonator mirror (3, 3a) is a dichroic decoupling mirror arranged between the substrate (2, 2a, 2b, 2c, 2d) and the laser medium, which is designed to be at least partially transparent for the laser emission and for the pump radiation, and the dichroic decoupling mirror is partially reflecting for the optical pump radiation and, together with ∘ a second resonator mirror, ∘ a reflecting boundary surface of the laser medium or ∘ total internal reflection in the laser medium, is constructed and arranged so that ∘ resonance for the laser emission and ∘ enhanced intensity for pump radiation occur, and • the substrate (2, 2a, 2b, 2c, 2d, 2e) has a thickness in the direction of laser emission which is, in particular considerably, greater than that of the laser medium. • a substrate (2, 2a, 2b, 2c, 2d, 2e), in particular of vanadate, • an amplifying laser medium for generating the laser emission, in particular doped vanadate, preferably Nd:vanadate with a doping of more than 1% Nd, • a first resonator mirror (3, 3a, 3b, 3c) at least partially transparent for optical pump radiation, • a component for generating a laser emission with femto- or picosecond pulse characteristics, in particular a saturable absorber structure, constructed and arranged such that the ultrashort pulse microchip laser is Q-switched, wherein • the substrate (2, 2a, 2b, 2c, 2d, 2e) and the laser medium are formed from the same material and the substrate (2, 2a, 2b, 2c, 2d, 2e) is doped to a lower level than the laser medium, in particular undoped, and • the substrate (2, 2a, 2b, 2c, 2d, 2e), the laser medium and the first resonator mirror (3, 3a, 3b, 3c), in particular the component for generating a laser emission with femto- or picosecond pulse characteristics, are connected to one another, wherein • the laser medium has a thickness in the direction of laser emission of less than 200 μm, in particular less than 100 μm, • the first resonator mirror (3, 3a) is a dichroic decoupling mirror arranged between the substrate (2, 2a, 2b, 2c, 2d) and the laser medium, which is designed to be at least partially transparent for the laser emission and for the pump radiation, and the dichroic decoupling mirror is partially reflecting for the optical pump radiation and, together with ∘ a second resonator mirror, ∘ a reflecting boundary surface of the laser medium or ∘ total internal reflection in the laser medium, is constructed and arranged so that ∘ resonance for the laser emission and ∘ enhanced intensity for pump radiation occur, and ∘ a second resonator mirror, ∘ a reflecting boundary surface of the laser medium or ∘ total internal reflection in the laser medium, is constructed and arranged so that ∘ resonance for the laser emission and ∘ enhanced intensity for pump radiation occur, and • the substrate (2, 2a, 2b, 2c, 2d, 2e) has a thickness in the direction of laser emission which is, in particular considerably, greater than that of the laser medium.