A solid-state imaging device (1, 2) comprising: a stacked photoelectric converter for each of pixels (11, 31), the stacked photoelectric converter having a plurality of photoelectric conversion elements (110, 120, 130) stacked therein, the plurality of photoelectric conversion elements (110, 120, 130) each having different wavelength selectivity, the plurality of the photoelectric conversion elements (110, 120, 130) comprising a first photoelectric conversion element having predetermined wavelength selectivity, a plurality of the first photoelectric conversion elements being divided into a plurality of groups; and a first pixel circuit for each of the groups, so that first photoelectric conversion elements of one group share one of the first pixel circuits, the first pixel circuit being configured to output a pixel signal based on an electric charge outputted from one of the first photoelectric conversion elements, wherein the solid-state imaging device (1, 2) further includes a plurality of drive wiring lines (VOA1, VOA2) to which control signals are applied, the control signals being for controlling output of electric charges accumulated in the photoelectric conversion elements(110, 120, 130), and in a case where, in each of unit pixel columns corresponding to the first pixel circuits, a plurality of the first photoelectric conversion elements belonging to a first group and a plurality of the first photoelectric conversion elements belonging to a second group are brought into focus, the plurality of the first photoelectric conversion elements belonging to the first group sharing one of the first pixel circuits and the plurality of the first photoelectric conversion elements belonging to the second group sharing another of the first pixel circuits, each of the drive wiring lines (VOA1, VOA2) is coupled to the first photoelectric conversion elements belonging to the first group and the first photoelectric conversion elements belonging to the second group. a stacked photoelectric converter for each of pixels (11, 31), the stacked photoelectric converter having a plurality of photoelectric conversion elements (110, 120, 130) stacked therein, the plurality of photoelectric conversion elements (110, 120, 130) each having different wavelength selectivity, the plurality of the photoelectric conversion elements (110, 120, 130) comprising a first photoelectric conversion element having predetermined wavelength selectivity, a plurality of the first photoelectric conversion elements being divided into a plurality of groups; and a first pixel circuit for each of the groups, so that first photoelectric conversion elements of one group share one of the first pixel circuits, the first pixel circuit being configured to output a pixel signal based on an electric charge outputted from one of the first photoelectric conversion elements, wherein the solid-state imaging device (1, 2) further includes a plurality of drive wiring lines (VOA1, VOA2) to which control signals are applied, the control signals being for controlling output of electric charges accumulated in the photoelectric conversion elements(110, 120, 130), and in a case where, in each of unit pixel columns corresponding to the first pixel circuits, a plurality of the first photoelectric conversion elements belonging to a first group and a plurality of the first photoelectric conversion elements belonging to a second group are brought into focus, the plurality of the first photoelectric conversion elements belonging to the first group sharing one of the first pixel circuits and the plurality of the first photoelectric conversion elements belonging to the second group sharing another of the first pixel circuits, each of the drive wiring lines (VOA1, VOA2) is coupled to the first photoelectric conversion elements belonging to the first group and the first photoelectric conversion elements belonging to the second group.