A device comprising: a silicon substrate having a first substrate surface and a second substrate surface opposite the first substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit, wherein the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, wherein the lithium-based battery includes an anode current collector and a cathode current collector defined within the plurality of battery layers and contacting the first substrate surface; a first through-silicon via,TSV, passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit; characterized in that: the first TSV comprises a first conductive channel insulated from the silicon substrate by a first insulating layer surrounding the first conductive channel; and the second TSV comprises a second conductive channel insulated from the silicon substrate by a second insulating layer surrounding the second conductive channel. a silicon substrate having a first substrate surface and a second substrate surface opposite the first substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit, wherein the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, wherein the lithium-based battery includes an anode current collector and a cathode current collector defined within the plurality of battery layers and contacting the first substrate surface; a first through-silicon via,TSV, passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the integrated circuit; characterized in that: the first TSV comprises a first conductive channel insulated from the silicon substrate by a first insulating layer surrounding the first conductive channel; and the second TSV comprises a second conductive channel insulated from the silicon substrate by a second insulating layer surrounding the second conductive channel. the first TSV comprises a first conductive channel insulated from the silicon substrate by a first insulating layer surrounding the first conductive channel; and the second TSV comprises a second conductive channel insulated from the silicon substrate by a second insulating layer surrounding the second conductive channel.