A semiconductor light emitting device comprising: a substrate (4; 304); a semiconductor multilayer structure (8, 10, 12, 14, 16, 18) formed on a front surface of the substrate (4; 304), the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) including a light emitting layer; an anode electrode and a cathode electrode formed on the semiconductor multilayer structure (8, 10, 12, 14, 16, 18), wherein the anode and cathode electrodes are arranged to supply power to the semiconductor multilayer structure (8, 10, 12, 14, 16, 10 18) so as to cause the light emitting layer to emit light; and a phosphor film covering at least an entire main surface of the semi-conductor multilayer structure (8, 10, 12, 14, 16, 18) which faces away from the substrate, wherein the substrate (4; 304) is a non-doped SiC substrate, wherein the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) is divided into a plurality of portions by a division groove that is deep enough to reach the substrate (4; 304), and each of the plurality of portions is an independent light emitting element having a diode structure and including an anode electrode (22; 321, 323) and a cathode electrode, and an insulating film formed on a side surface of each of the plurality of light emitting elements, the plurality of light emitting elements being connected in series such that a cathode electrode of a light emitting element is connected to an anode electrode (22; 321, 323) of a different light emitting element using a wire formed by a thin metal film formed on the insulating film, and one of an anode electrode (22; 321, 323) of one of the plurality of light emitting elements at a higher potential end of an array of the plurality of light emitting elements is the second electrode (34, 344), and one of a cathode electrode of one of the plurality of light emitting elements at a lower potential end of the array of the plurality of light emitting elements is the first electrode, characterized in that: the semiconductor light emitting device further comprises: a first terminal (36; 336) and a second terminal (38; 338) formed on a back surface of the substrate (4; 304); a first conductive member (40; 440) electrically connecting the first electrode to the first terminal (36; 336); and a second conductive member (44; 444) electrically connecting the second electrode (34; 344) to the second terminal (38; 338), wherein at least part of each of the first conductive member and the second conductive member is a plated-through hole (42; 46; 342; 346) provided in the substrate (4; 304), wherein the back surface of the substrate (4; 304) which faces away from the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) has oblique areas which correspond to the plated-through holes (42; 46; 342; 346) such that the oblique areas are thinner than remaining areas of the substrate (4; 304), wherein the oblique areas extend along two parallel edges of the back surface of the substrate (4; 304). a substrate (4; 304); a semiconductor multilayer structure (8, 10, 12, 14, 16, 18) formed on a front surface of the substrate (4; 304), the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) including a light emitting layer; an anode electrode and a cathode electrode formed on the semiconductor multilayer structure (8, 10, 12, 14, 16, 18), wherein the anode and cathode electrodes are arranged to supply power to the semiconductor multilayer structure (8, 10, 12, 14, 16, 10 18) so as to cause the light emitting layer to emit light; and a phosphor film covering at least an entire main surface of the semi-conductor multilayer structure (8, 10, 12, 14, 16, 18) which faces away from the substrate, wherein the substrate (4; 304) is a non-doped SiC substrate, wherein the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) is divided into a plurality of portions by a division groove that is deep enough to reach the substrate (4; 304), and each of the plurality of portions is an independent light emitting element having a diode structure and including an anode electrode (22; 321, 323) and a cathode electrode, and an insulating film formed on a side surface of each of the plurality of light emitting elements, the semiconductor light emitting device further comprises: a first terminal (36; 336) and a second terminal (38; 338) formed on a back surface of the substrate (4; 304); a first conductive member (40; 440) electrically connecting the first electrode to the first terminal (36; 336); and a second conductive member (44; 444) electrically connecting the second electrode (34; 344) to the second terminal (38; 338), wherein at least part of each of the first conductive member and the second conductive member is a plated-through hole (42; 46; 342; 346) provided in the substrate (4; 304), wherein the back surface of the substrate (4; 304) which faces away from the semiconductor multilayer structure (8, 10, 12, 14, 16, 18) has oblique areas which correspond to the plated-through holes (42; 46; 342; 346) such that the oblique areas are thinner than remaining areas of the substrate (4; 304), wherein the oblique areas extend along two parallel edges of the back surface of the substrate (4; 304).