mhurhangee/ep-ind-claims huggingface dataset:
A flake comprising a magnetic layer having first and second major surfaces, and a first reflector layer for reflecting light on the first major surface of the magnetic layer, characterized in that the flake is absent an absorber layer for absorbing light, the flake comprises a first dielectric optical stack consisting of two or more dielectric layers having different refractive indices on the first reflector layer, and that the flake comprises a second reflector layer for reflecting light on the second major surface of the magnetic layer, and wherein the magnetic layer comprises a material selected from the group consisting of iron, nickel, cobalt, gadolinium, terbium, dysprosium, erbium, Fe/Si, Fe/Ni, FeCo, Fe/Ni/Mo, SmCo 5, NdCo 5, Sm 2 Co 17, Nd 2 Fe 14 B, TbFe 2, NiFe 2 O 4, MnFe 2 O 4, CoFe 2 O 4, YIG, GdIG, iron alloys, nickel oxides, nickel alloys, cobalt alloys, cobalt oxides, gadolinium alloys, gadolinium oxides, terbium alloys, terbium oxides, dysprosium alloys, dysprosium oxides, erbium alloys, erbium oxides, and combinations thereof.
A stable microcapsule composition comprising a microcapsule dispersed in an aqueous phase and a stabilizing agent, wherein the stabilizing agent is a combination of a negatively charged clay and a cationic polymer, wherein the microcapsule is a core-shell microcapsule having a microcapsule wall and a microcapsule core encapsulated by the microcapsule wall, and wherein the cationic polymer is a hydroxylethyl cellulose dimethyl diallylammonium chloride copolymer (PQ-4). wherein the microcapsule is a core-shell microcapsule having a microcapsule wall and a microcapsule core encapsulated by the microcapsule wall, and wherein the cationic polymer is a hydroxylethyl cellulose dimethyl diallylammonium chloride copolymer (PQ-4).
A process for the production of composite materials comprising nano-fibrillar cellulose gels from recycled and/or deinked pulp, characterized by the steps of: a) providing cellulose fibres in the form of recycled and/or deinked pulp; b) providing at least one filler and/or pigment; c) combining the cellulose fibres of step a) and the at least one filler and/or pigment of step b); d) fibrillating the cellulose fibres in an aqueous environment in the presence of the at least one filler and/or pigment until a nano-fibrillar cellulose gel is formed, wherein the formation of the gel is verified by monitoring the viscosity of the mixture in dependence of the shearing rate, wherein the viscosity decrease of the mixture upon step-wise increase of the shearing rate is stronger than the corresponding viscosity increase upon subsequent step-wise reduction of the shearing rate over at least part of the shear rate range as shearing approaches zero; e) providing at least one further filler and/or pigment; f) combining the gel of step d) with the at least one further filler and/or pigment of step e). a) providing cellulose fibres in the form of recycled and/or deinked pulp; b) providing at least one filler and/or pigment; c) combining the cellulose fibres of step a) and the at least one filler and/or pigment of step b); d) fibrillating the cellulose fibres in an aqueous environment in the presence of the at least one filler and/or pigment until a nano-fibrillar cellulose gel is formed, wherein the formation of the gel is verified by monitoring the viscosity of the mixture in dependence of the shearing rate, wherein the viscosity decrease of the mixture upon step-wise increase of the shearing rate is stronger than the corresponding viscosity increase upon subsequent step-wise reduction of the shearing rate over at least part of the shear rate range as shearing approaches zero; e) providing at least one further filler and/or pigment; f) combining the gel of step d) with the at least one further filler and/or pigment of step e).
A compound having the following formula: wherein: - m is an integer comprised between 1 and 10,000, and preferably between 50 and 1,000; - B 1 and B 2, independently of each other, have the following formula: or the following formula: wherein: - X is: • a bond or • a group of formula -NH-X 1 -, wherein X 1 is a linear or branched (C 1 -C 5)alkylene group; - Y is selected from the linear and branched (C 1 -C 5)alkylene groups; - Z and Z' are independently of each other -O- or -NH-; - W and W' are independently of each other selected from the group consisting of: -C(=O)-NH-Y'-, -C(=O)-Y'-, and -Y'- groups, Y' representing a linear or branched (C 1 -C 5)alkylene group, preferably a (C 1 -C 3)alkylene group; - R a is selected from the group consisting of: H, linear or branched (C 1 -C 5)alkyl, and halogen atom; - A comprises at least one repeating unit having the following formula and at least one repeating unit having one of the following formulae (U'1) and (U'2): and optionally at least one further repeating unit having the following formula: wherein the repeating units of A are randomly distributed, and wherein A comprises at least 5% in number of units in relation to the total number of units,, (U'1), and (U'2); wherein: ▪ R a is as defined above; ▪ R a" is selected from the group consisting of H, -CH=CH 2, and -C(=CH 2)(R a), R a being as defined above; ▪ R b is H and R c is B 3 having the formula as defined above, or R b is B 3 having the formula as defined above and R c is H; ▪ A' is chosen from the following groups: Ra and B 3 being as defined above. - m is an integer comprised between 1 and 10,000, and preferably between 50 and 1,000; - B 1 and B 2, independently of each other, have the following formula: - X is: • a bond or • a group of formula -NH-X 1 -, wherein X 1 is a linear or branched (C 1 -C 5)alkylene group; • a bond or • a group of formula -NH-X 1 -, wherein X 1 is a linear or branched (C 1 -C 5)alkylene group; - Y is selected from the linear and branched (C 1 -C 5)alkylene groups; - Z and Z' are independently of each other -O- or -NH-; - W and W' are independently of each other selected from the group consisting of: -C(=O)-NH-Y'-, -C(=O)-Y'-, and -Y'- groups, Y' representing a linear or branched (C 1 -C 5)alkylene group, preferably a (C 1 -C 3)alkylene group; - R a is selected from the group consisting of: H, linear or branched (C 1 -C 5)alkyl, and halogen atom; - A comprises at least one repeating unit having the following formula ▪ R a is as defined above; ▪ R a" is selected from the group consisting of H, -CH=CH 2, and -C(=CH 2)(R a), R a being as defined above; ▪ R b is H and R c is B 3 having the formula as defined above, or R b is B 3 having the formula as defined above and R c is H; ▪ A' is chosen from the following groups:
A polypropylene film, a polypropylene resin constituting the polypropylene film having: - a molecular weight distribution (Mw/Mn) of weight average molecular weight Mw to number average molecular weight Mn of 5.0 or more and 6.9 or less; - a Z-average molecular weight Mz of 650,000 or more and 945,000 or less; and - a weight fraction w of 2.6% or more and 4.2% or less when the logarithmic molecular weight Log - 4.0 in an integral molecular weight distribution curve. - a molecular weight distribution (Mw/Mn) of weight average molecular weight Mw to number average molecular weight Mn of 5.0 or more and 6.9 or less; - a Z-average molecular weight Mz of 650,000 or more and 945,000 or less; and - a weight fraction w of 2.6% or more and 4.2% or less when the logarithmic molecular weight Log - 4.0 in an integral molecular weight distribution curve.
A padlock comprising a shackle and a body, which body comprises bores for both ends of the shackle, wherein the padlock is provided with a key intended to unlock another lock, said key comprises a blade section pivotable relative the shank of the key, which blade section is adapted, in a first position of the blade section, to be at least partially received into one bore, and a bottom opening is provided at the bottom of said bore of the padlock, and the blade section of said key comprises an expanded portion not fitting into the bottom opening of sais bore, characterized in that said key is inserted into the bore of the body receiving the shackle end removable out of said body so that said key can be taken out of the bore only when the removable end of said shackle is released out of said bore.
A ferrous alloy, the ferrous alloy is configured to form a matrix comprising: near spherical and hypereutectic borides and/or borocarbides; wherein a volume fraction of the near spherical and hypereutectic borides and/or borocarbides is ≥ 5%, where a near spherical phase has an aspect ratio ≤2:1, the aspect ratio being defined as the ratio between a major axis in cross section to an orthogonal diameter of the near spherical and hypereutectic borides and/or borocarbides; wherein the volume fraction of hypereutectic and rod-like phases with a maximum dimension in cross section ≥50um and an aspect ratio greater than 2:1 is ≤5%; wherein a total volume fraction of borides and borocarbides is ≥10%, and wherein an elemental composition of the alloy comprises: B: 1.95-5.5 wt.%; C: 0-2.08 wt.%; Cr: 1.52-24 wt.%; Mo: 2.9-22 wt.%; Ti: 0-7.21 wt.%; W: 0-19.2 wt.%; Nb: 0-6 wt.%; Zr: 0-3.2 wt.%; and a balance of Fe, or Fe and 2 wt.% or less of impurities; wherein Mo+W is greater than or equal to 8 wt.%. near spherical and hypereutectic borides and/or borocarbides; wherein a volume fraction of the near spherical and hypereutectic borides and/or borocarbides is ≥ 5%, where a near spherical phase has an aspect ratio ≤2:1, the aspect ratio being defined as the ratio between a major axis in cross section to an orthogonal diameter of the near spherical and hypereutectic borides and/or borocarbides; wherein the volume fraction of hypereutectic and rod-like phases with a maximum dimension in cross section ≥50um and an aspect ratio greater than 2:1 is ≤5%; wherein a total volume fraction of borides and borocarbides is ≥10%, and wherein an elemental composition of the alloy comprises: B: 1.95-5.5 wt.%; C: 0-2.08 wt.%; Cr: 1.52-24 wt.%; Mo: 2.9-22 wt.%; Ti: 0-7.21 wt.%; W: 0-19.2 wt.%; Nb: 0-6 wt.%; Zr: 0-3.2 wt.%; and B: 1.95-5.5 wt.%; C: 0-2.08 wt.%; Cr: 1.52-24 wt.%; Mo: 2.9-22 wt.%; Ti: 0-7.21 wt.%; W: 0-19.2 wt.%; Nb: 0-6 wt.%; Zr: 0-3.2 wt.%; and a balance of Fe, or Fe and 2 wt.% or less of impurities; wherein Mo+W is greater than or equal to 8 wt.%.
A method for implementing a mobile broadband device service, wherein a host is connected to a mobile broadband device, and the method comprises: Obtaining, by the host, service information of the mobile broadband device according to a rule set on the host or by calling an application programming interface of a Web server on the mobile broadband device; and judging if it is necessary to use a corresponding function of the host for implementing a mobile broadband device service corresponding to the service information, executing, by the host, the corresponding function of the host by calling an application programming interface provided by an operating system of the host, to implement the mobile broadband device service characterized in that the method further comprises: if it is unnecessary to use the corresponding function of the host for implementing the mobile broadband device service corresponding to the service information, calling, by the host, the application programming interface of the Web server on the mobile broadband device to implement the mobile broadband device service. Obtaining, by the host, service information of the mobile broadband device according to a rule set on the host or by calling an application programming interface of a Web server on the mobile broadband device; and judging if it is necessary to use a corresponding function of the host for implementing a mobile broadband device service corresponding to the service information, executing, by the host, the corresponding function of the host by calling an application programming interface provided by an operating system of the host, to implement the mobile broadband device service characterized in that the method further comprises: if it is unnecessary to use the corresponding function of the host for implementing the mobile broadband device service corresponding to the service information, calling, by the host, the application programming interface of the Web server on the mobile broadband device to implement the mobile broadband device service. if it is unnecessary to use the corresponding function of the host for implementing the mobile broadband device service corresponding to the service information, calling, by the host, the application programming interface of the Web server on the mobile broadband device to implement the mobile broadband device service.
A method for communicating performed by a node within an apparatus having a plurality of nodes, comprising: contending for control of a communications link by driving a data signal to a first voltage level, wherein the communications link carries both data and clock signals; monitoring (904, 906) the data signal for a first period of time, starting from the time when said step of driving a data signal to a first voltage level is executed; yielding control of the communications link if the voltage of the data signal has been driven to a second voltage level by a different node contending for control of the communications link upon expiration of the first period of time; asserting control over the communications link by driving the data signal to a second voltage level if the voltage of the data signal remains at the first voltage level upon expiration of the first period of time; and transmitting a message on the communications link after asserting control of the communications link, wherein the first period of time has a duration corresponding to a priority of the message. contending for control of a communications link by driving a data signal to a first voltage level, wherein the communications link carries both data and clock signals; monitoring (904, 906) the data signal for a first period of time, starting from the time when said step of driving a data signal to a first voltage level is executed; yielding control of the communications link if the voltage of the data signal has been driven to a second voltage level by a different node contending for control of the communications link upon expiration of the first period of time; asserting control over the communications link by driving the data signal to a second voltage level if the voltage of the data signal remains at the first voltage level upon expiration of the first period of time; and transmitting a message on the communications link after asserting control of the communications link, wherein the first period of time has a duration corresponding to a priority of the message.
Profile for doors, windows, frames or façade constructions having a profile body comprising an opening and an arrangement inserted therein consisting of a switching element of a circuit and a separate retaining means with a linear stop for limiting the linear movement of the arrangement within the opening of the profile body, characterized in that the switching element has a terminal cable and in that the retaining means is designed to be mounted at a right angle to the longitudinal direction of the cable and in that the retaining means, in particular the anchor sleeve, has a slot which extends over the entire length of the retaining means, so that the retaining means is open in some areas and the cable can thus be guided through the slot into the interior region of the retaining means from a direction perpendicular to the longitudinal direction of the cable.
A communication method, comprising: broadcasting, from a communication apparatus to a user terminal, system information for Device to Device, D2D, proximity service, by use of a frequency of a serving cell of the user terminal, the communication apparatus managing the serving cell, wherein the system information includes first information and second information, the first information indicates an available frequency for a discovery procedure in which the user terminal discovers another user terminal, the second information indicates at least one parameter for calculating transmission power for the discovery procedure, the available frequency for the discovery procedure is a frequency different from the frequency of the serving cell, the first information is related to a center frequency of a frequency band of the available frequency for the discovery procedure, the system information includes fourth information, and the fourth information indicates a number of times of re-transmissions of a discovery signal in the discovery procedure. broadcasting, from a communication apparatus to a user terminal, system information for Device to Device, D2D, proximity service, by use of a frequency of a serving cell of the user terminal, the communication apparatus managing the serving cell, wherein the system information includes first information and second information, the first information indicates an available frequency for a discovery procedure in which the user terminal discovers another user terminal, the second information indicates at least one parameter for calculating transmission power for the discovery procedure, the available frequency for the discovery procedure is a frequency different from the frequency of the serving cell, the first information is related to a center frequency of a frequency band of the available frequency for the discovery procedure, the system information includes fourth information, and the fourth information indicates a number of times of re-transmissions of a discovery signal in the discovery procedure.
A tool for engaging a screw head having a slot in an upper surface and a tapered recess disposed downwardly of the slot, the tool comprising an upper engagement section designed to fit within the slot, and a lower engagement section shaped to extend into the tapered recess with a contact surface of an external surface of the lower engagement section in an interference fit with at least a portion of the wall of the tapered recess when the upper engagement section is disposed within the slot, characterized in that, within an axial cross-section of the tool, the contact surface comprises a first curved portion.
An apparatus for disease detection or diagnosis at a test site on or in a test subject, said apparatus comprising: at least one sensor electrode designed for contact with the test site; at least one reference electrode for contact with a reference site; a processing means, configured to collect, analyze and store data obtained from the electrodes; characterized by further comprising a band pass filter allowing passage of extremely low frequency alternating currents (ELFACs) within the frequency range 0.01 Hz to 0.1 Hz, wherein said sensor electrode, reference electrode are operatively coupled to the processing means via the band pass filter. at least one sensor electrode designed for contact with the test site; at least one reference electrode for contact with a reference site; a processing means, configured to collect, analyze and store data obtained from the electrodes; characterized by further comprising a band pass filter allowing passage of extremely low frequency alternating currents (ELFACs) within the frequency range 0.01 Hz to 0.1 Hz, wherein said sensor electrode, reference electrode are operatively coupled to the processing means via the band pass filter.
A semiconductor device comprising: a semiconductor substrate; a drift layer of a first conductive type which is provided in the semiconductor substrate; a collector layer of a second conductive type which is provided in a first surface area of a first side of the semiconductor substrate; a buffer layer of the first conductive type which is provided between the drift layer and the collector layer; a base layer of the second conductive type which is provided in a second surface area of a second side of the semiconductor substrate; an emitter layer of the first conductive type which is provided in the base layer; a gate electrode which is provided on the substrate, above the base layer; and a gate insulating layer provided between the gate electrode and the base layer, characterized in that: the collector layer has a thickness of 1 μm or less; and a thickness of the buffer layer and a dose amount of impurities therein, and a thickness of the collector layer and a dose amount of impurities in the collector layer, are such that, when the semiconductor device is being turned off, a maximum value of the ratio Ic/Ie, obtained by dividing a collector current Ic flowing through the collector layer by an electron current Ie flowing through the emitter layer, is 5 or less. a semiconductor substrate; a drift layer of a first conductive type which is provided in the semiconductor substrate; a collector layer of a second conductive type which is provided in a first surface area of a first side of the semiconductor substrate; a buffer layer of the first conductive type which is provided between the drift layer and the collector layer; a base layer of the second conductive type which is provided in a second surface area of a second side of the semiconductor substrate; an emitter layer of the first conductive type which is provided in the base layer; a gate electrode which is provided on the substrate, above the base layer; and a gate insulating layer provided between the gate electrode and the base layer, characterized in that: the collector layer has a thickness of 1 μm or less; and a thickness of the buffer layer and a dose amount of impurities therein, and a thickness of the collector layer and a dose amount of impurities in the collector layer, are such that, when the semiconductor device is being turned off, a maximum value of the ratio Ic/Ie, obtained by dividing a collector current Ic flowing through the collector layer by an electron current Ie flowing through the emitter layer, is 5 or less. the collector layer has a thickness of 1 μm or less; and a thickness of the buffer layer and a dose amount of impurities therein, and a thickness of the collector layer and a dose amount of impurities in the collector layer, are such that, when the semiconductor device is being turned off, a maximum value of the ratio Ic/Ie, obtained by dividing a collector current Ic flowing through the collector layer by an electron current Ie flowing through the emitter layer, is 5 or less.