Thermal-electric integrated logic circuit, comprising: at least two inputs (In A -In H,, In/Out th1, In/Out th2, In/Out th3), at least one output (Out, In/Out th1, In/Out th2, In/Out th3), a series member consisting of a resistor and a metal-insulator transition capable resistor (R MIT) used as a VO 2 switching element connected to a supply voltage (U cc), and where the at least one output (Out) is made up by the common point of the resistor of the series member and the metal-insulator transition capable resistor (R MIT) used as switching element, and where the at least two inputs (In A -In H, In/Out th1, In/Out th2, In/Out th3) comprise at least one electric input (In A -In H) and at least one thermal input (In/Out th2, In/Out th3), whereas in case of a NOR logic gate circuit, the at least one input resistor (R1-R6) constituting a thermal input of the gate circuit is arranged closer to the metal-insulator transition capable resistor (R MIT) used as the VO2 switching element of the logic gate circuit than a thermal diffusion length (L th), in case of a NAND logic gate circuit, at least one input resistor (R1-R6) constituting a thermal input of the gate circuit is arranged farther from the metal-insulator transition capable resistor (R MIT) used as the VO2 switching element of the logic gate circuit than a thermal diffusion length (L th), in case of a majority logic gate circuit, all excitation input resistors (R1-R6) are arranged at an identical distance corresponding to the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) of the logic gate circuit used as the switching element VO 2; in case of an extended majority logic gate circuit, all excitation input resistors are arranged at an identical distance, less than the thermal diffusion length (L th) or greater than the thermal diffusion length (L th), from the metal-insulator transition capable resistor (R MIT) used as the VO 2 switching element; characterised by further providing a weighted majority logic gate circuit, at least one excitation input resistor is arranged at a distance smaller than the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) of the logic gate circuit switching element, and at least two excitation input resistors are arranged at a distance greater than the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) used as the VO 2 switching element. at least two inputs (In A -In H,, In/Out th1, In/Out th2, In/Out th3), at least one output (Out, In/Out th1, In/Out th2, In/Out th3), a series member consisting of a resistor and a metal-insulator transition capable resistor (R MIT) used as a VO 2 switching element connected to a supply voltage (U cc), and where the at least one output (Out) is made up by the common point of the resistor of the series member and the metal-insulator transition capable resistor (R MIT) used as switching element, and where the at least two inputs (In A -In H, In/Out th1, In/Out th2, In/Out th3) comprise at least one electric input (In A -In H) and at least one thermal input (In/Out th2, In/Out th3), whereas in case of a NOR logic gate circuit, the at least one input resistor (R1-R6) constituting a thermal input of the gate circuit is arranged closer to the metal-insulator transition capable resistor (R MIT) used as the VO2 switching element of the logic gate circuit than a thermal diffusion length (L th), in case of a NAND logic gate circuit, at least one input resistor (R1-R6) constituting a thermal input of the gate circuit is arranged farther from the metal-insulator transition capable resistor (R MIT) used as the VO2 switching element of the logic gate circuit than a thermal diffusion length (L th), in case of a majority logic gate circuit, all excitation input resistors (R1-R6) are arranged at an identical distance corresponding to the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) of the logic gate circuit used as the switching element VO 2; in case of an extended majority logic gate circuit, all excitation input resistors are arranged at an identical distance, less than the thermal diffusion length (L th) or greater than the thermal diffusion length (L th), from the metal-insulator transition capable resistor (R MIT) used as the VO 2 switching element; characterised by further providing a weighted majority logic gate circuit, at least one excitation input resistor is arranged at a distance smaller than the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) of the logic gate circuit switching element, and at least two excitation input resistors are arranged at a distance greater than the thermal diffusion length (L th) from the metal-insulator transition capable resistor (R MIT) used as the VO 2 switching element.