Wafer-level process for bending microelectronic components, comprising the following steps: o producing a microelectronic structure, comprising a microelectronic substrate, having an upper face and an opposite lower face, comprising a plurality of microelectronic components, which each comprise lower conductive pads located on the lower face and intended to allow the microelectronic component to be connected electrically; o providing a shaping carrier, having an upper face and an opposite lower face, the upper face comprising a plurality of curved surfaces; o depositing an adhesive lower layer having a thickness larger than the thickness of the lower conductive pads, so as either to entirely cover the lower face of the microelectronic substrate and the lower conductive pads such that the adhesive lower layer has a free lower face that is continuous and therefore not passed right through by the lower conductive pads which would otherwise protrude from this adhesive lower layer, or to cover the curved surfaces; o dicing at least the microelectronic substrate to singulate the microelectronic components; then o transferring the microelectronic components to the shaping carrier; then o bending the microelectronic components, the adhesive lower layer then making contact with the lower face of the microelectronic components and with the corresponding curved surface, thus preventing the lower conductive pads from making contact with the curved surface; then o producing conductive vias that extend through the shaping carrier and the adhesive lower layer, from the lower face of the shaping carrier, in order to emerge onto the lower conductive pads. o producing a microelectronic structure, comprising a microelectronic substrate, having an upper face and an opposite lower face, comprising a plurality of microelectronic components, which each comprise lower conductive pads located on the lower face and intended to allow the microelectronic component to be connected electrically; o providing a shaping carrier, having an upper face and an opposite lower face, the upper face comprising a plurality of curved surfaces; o depositing an adhesive lower layer having a thickness larger than the thickness of the lower conductive pads, so as either to entirely cover the lower face of the microelectronic substrate and the lower conductive pads such that the adhesive lower layer has a free lower face that is continuous and therefore not passed right through by the lower conductive pads which would otherwise protrude from this adhesive lower layer, or to cover the curved surfaces; o dicing at least the microelectronic substrate to singulate the microelectronic components; then o transferring the microelectronic components to the shaping carrier; then o bending the microelectronic components, the adhesive lower layer then making contact with the lower face of the microelectronic components and with the corresponding curved surface, thus preventing the lower conductive pads from making contact with the curved surface; then o producing conductive vias that extend through the shaping carrier and the adhesive lower layer, from the lower face of the shaping carrier, in order to emerge onto the lower conductive pads.