A method for manufacturing a solar cell comprising: - forming a tunneling layer on one surface of a semiconductor substrate; - forming a semiconductor layer on the tunneling layer; and - doping the semiconductor layer with a first conductive type dopant and a second conductive type dopant to form a first conductive type area and a second conductive type area separated from each other via a barrier area wherein the doping of the semiconductor layer comprises: - forming a first doping layer including the first conductive type dopant on the semiconductor layer, in an area corresponding to the first conductive type area; - forming an undoped layer on the first doping layer and on a portion of the semiconductor layer adjacent to the first doping layer; - forming a second doping layer including the second conductive type dopant on the undoped layer and the semiconductor layer, so as to entirely cover the undoped layer and the semiconductor layer; and - diffusing the first conductive type dopant and the second conductive type dopant into the semiconductor layer to simultaneously form the first conductive type area, the second conductive type area and the barrier area, - wherein, in the diffusion, a portion of the semiconductor layer into which the first conductive type dopant is diffused constitutes the first conductive type area, a portion of the semiconductor layer into which the second conductive type dopant is diffused constitutes the second conductive type area, and an undoped portion between the first conductive type area and the second conductive type area constitutes the barrier area. - forming a tunneling layer on one surface of a semiconductor substrate; - forming a semiconductor layer on the tunneling layer; and - doping the semiconductor layer with a first conductive type dopant and a second conductive type dopant to form a first conductive type area and a second conductive type area separated from each other via a barrier area wherein the doping of the semiconductor layer comprises: - forming a first doping layer including the first conductive type dopant on the semiconductor layer, in an area corresponding to the first conductive type area; - forming an undoped layer on the first doping layer and on a portion of the semiconductor layer adjacent to the first doping layer; - forming a second doping layer including the second conductive type dopant on the undoped layer and the semiconductor layer, so as to entirely cover the undoped layer and the semiconductor layer; and - diffusing the first conductive type dopant and the second conductive type dopant into the semiconductor layer to simultaneously form the first conductive type area, the second conductive type area and the barrier area, - wherein, in the diffusion, a portion of the semiconductor layer into which the first conductive type dopant is diffused constitutes the first conductive type area, a portion of the semiconductor layer into which the second conductive type dopant is diffused constitutes the second conductive type area, and an undoped portion between the first conductive type area and the second conductive type area constitutes the barrier area. - forming a first doping layer including the first conductive type dopant on the semiconductor layer, in an area corresponding to the first conductive type area; - forming an undoped layer on the first doping layer and on a portion of the semiconductor layer adjacent to the first doping layer; - forming a second doping layer including the second conductive type dopant on the undoped layer and the semiconductor layer, so as to entirely cover the undoped layer and the semiconductor layer; and - diffusing the first conductive type dopant and the second conductive type dopant into the semiconductor layer to simultaneously form the first conductive type area, the second conductive type area and the barrier area, - wherein, in the diffusion, a portion of the semiconductor layer into which the first conductive type dopant is diffused constitutes the first conductive type area, a portion of the semiconductor layer into which the second conductive type dopant is diffused constitutes the second conductive type area, and an undoped portion between the first conductive type area and the second conductive type area constitutes the barrier area.