An integrated circuit package comprising: a semiconductor die (108, 302, 311) that contains an electronic circuit and exposed electrical connections (110a, 110b) to the electronic circuit; a thermally-conductive heat spreader (104b, 303, 312) having a first outer surface and a second outer surface distinct from the first outer surface, the first outer surface being affixed to all portions of a silicon side of the semiconductor die (108, 302, 311) in a thermally-conductive manner; and non-electrically conductive, encapsulation material (111, 117, 201) completely encapsulating the semiconductor die (108, 302, 311) and the heat spreader (104b, 303, 312), except for the second surface of the heat spreader (104b, 303, 312) which is solderable and forms part of an exterior surface of the integrated circuit package, wherein: the integrated circuit package is an embedded die package; the semiconductor die (108, 302, 311) is an embedded die; the semiconductor die (108, 302, 311) includes a circuit side that is parallel to the silicon side; the integrated circuit package further includes at least one electrical connection to the circuit side of the semiconductor die (108, 302, 311); and the at least one electrical connection is an electroplated or sputtered conductive routing layer (112a, 112b) electrically connected to a terminal in the exterior surface of the integrated circuit package that includes the second surface of the heat spreader (104b, 303, 312) and the at least one electrical connection is on top of the exposed electrical connections (110a, 110b). a semiconductor die (108, 302, 311) that contains an electronic circuit and exposed electrical connections (110a, 110b) to the electronic circuit; a thermally-conductive heat spreader (104b, 303, 312) having a first outer surface and a second outer surface distinct from the first outer surface, the first outer surface being affixed to all portions of a silicon side of the semiconductor die (108, 302, 311) in a thermally-conductive manner; and non-electrically conductive, encapsulation material (111, 117, 201) completely encapsulating the semiconductor die (108, 302, 311) and the heat spreader (104b, 303, 312), except for the second surface of the heat spreader (104b, 303, 312) which is solderable and forms part of an exterior surface of the integrated circuit package, wherein: the integrated circuit package is an embedded die package; the semiconductor die (108, 302, 311) is an embedded die; the semiconductor die (108, 302, 311) includes a circuit side that is parallel to the silicon side; the integrated circuit package further includes at least one electrical connection to the circuit side of the semiconductor die (108, 302, 311); and the at least one electrical connection is an electroplated or sputtered conductive routing layer (112a, 112b) electrically connected to a terminal in the exterior surface of the integrated circuit package that includes the second surface of the heat spreader (104b, 303, 312) and the at least one electrical connection is on top of the exposed electrical connections (110a, 110b). the integrated circuit package is an embedded die package; the semiconductor die (108, 302, 311) is an embedded die; the semiconductor die (108, 302, 311) includes a circuit side that is parallel to the silicon side; the integrated circuit package further includes at least one electrical connection to the circuit side of the semiconductor die (108, 302, 311); and the at least one electrical connection is an electroplated or sputtered conductive routing layer (112a, 112b) electrically connected to a terminal in the exterior surface of the integrated circuit package that includes the second surface of the heat spreader (104b, 303, 312) and the at least one electrical connection is on top of the exposed electrical connections (110a, 110b).