A detection device for detecting infrared radiation, comprising at least one pixel (Pxl) having an axis (Δ) in a direction Z, said pixel comprising a first absorbent planar structure comprising at least one semiconductor layer (C mm, C1, C2); each layer (C mm, C1, C2) of the first absorbent planar structure being arranged in a crystal lattice structure; the first absorbent planar structure being N-doped and being produced epitaxially on a substrate (Sub), and the composition of the materials used to produce the at least one layer (C mm, C1, C2) of the first absorbent planar structure being chosen such that: ▪ the first absorbent planar structure has an effective valence band (BV eff) formed by a plurality of energy levels (Ev hh, Ev lh); each energy level (Ev hh, Ev lh) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh) strictly less than the first effective mass (m hh); the maximum energy level of the effective valence band (BV eff) being occupied by light holes (lh) along the axis (Δ) of the pixel; the crystal lattice structure of said layer does not exhibit any dislocations resulting from mechanical relaxation of said lattices; the effective mass of the positive charge carriers along the axis of the pixel (Δ) being less than half the effective mass of the positive charge carriers in directions defining a plane orthogonal to the axis of the pixel (Δ). each layer (C mm, C1, C2) of the first absorbent planar structure being arranged in a crystal lattice structure; the first absorbent planar structure being N-doped and being produced epitaxially on a substrate (Sub), and the composition of the materials used to produce the at least one layer (C mm, C1, C2) of the first absorbent planar structure being chosen such that: ▪ the first absorbent planar structure has an effective valence band (BV eff) formed by a plurality of energy levels (Ev hh, Ev lh); each energy level (Ev hh, Ev lh) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh) strictly less than the first effective mass (m hh); ▪ the first absorbent planar structure has an effective valence band (BV eff) formed by a plurality of energy levels (Ev hh, Ev lh); each energy level (Ev hh, Ev lh) being occupied by one of: ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh) strictly less than the first effective mass (m hh); ∘ a first type of positive charge carriers, called heavy holes (hh), having a first effective mass (m hh); ∘ or a second type of positive charge carriers, called light holes (lh), having a second effective mass (m lh) strictly less than the first effective mass (m hh); the maximum energy level of the effective valence band (BV eff) being occupied by light holes (lh) along the axis (Δ) of the pixel; the crystal lattice structure of said layer does not exhibit any dislocations resulting from mechanical relaxation of said lattices; the effective mass of the positive charge carriers along the axis of the pixel (Δ) being less than half the effective mass of the positive charge carriers in directions defining a plane orthogonal to the axis of the pixel (Δ).