An electrostatic discharge, ESD, protection device (200, 1200) comprising an NPN bipolar transistor coupled to a first node (201, 1201) and a PNP bipolar transistor coupled to a second node (202, 1202), each of the NPN bipolar transistor and the PNP bipolar transistor being formed in a semiconductor structure comprising: a first lowly doped region of a P dopant type forming a base of the NPN bipolar transistor and an emitter of the PNP bipolar transistor; a second lowly doped region of an N dopant type, formed within the first lowly doped region, forming a base of the PNP bipolar transistor and an emitter of the NPN bipolar transistor; a first highly doped region of the N dopant type, formed within the first lowly doped region and coupled to the first node, forming a collector of the NPN bipolar transistor; and a second highly doped region of the P dopant type, formed within the second lowly doped region and coupled to the second node, forming a collector of the PNP bipolar transistor; wherein a first reverse junction and a second reverse junction are formed if a voltage at the first node is higher than a voltage at the second node in response to an ESD event, the first reverse junction being arranged between the first lowly doped region and the first highly doped region and the second reverse junction being arranged between the second lowly doped region and the second highly doped region; wherein the ESD protection device is configured to trigger, thereby allowing current to be sunk from the first node to the second node in response to the ESD event, such that: if a leakage of the first reverse junction is lower than a leakage of the second reverse junction, a voltage over the first reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the first reverse junction is reached and, subsequently, a voltage over the second reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the second reverse junction is reached; or if the leakage of the second reverse junction is lower than the leakage of the first reverse junction, a voltage over the second reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the second reverse junction is reached and, subsequently, a voltage over the first reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the first reverse junction is reached. a first lowly doped region of a P dopant type forming a base of the NPN bipolar transistor and an emitter of the PNP bipolar transistor; a second lowly doped region of an N dopant type, formed within the first lowly doped region, forming a base of the PNP bipolar transistor and an emitter of the NPN bipolar transistor; a first highly doped region of the N dopant type, formed within the first lowly doped region and coupled to the first node, forming a collector of the NPN bipolar transistor; and a second highly doped region of the P dopant type, formed within the second lowly doped region and coupled to the second node, forming a collector of the PNP bipolar transistor; wherein a first reverse junction and a second reverse junction are formed if a voltage at the first node is higher than a voltage at the second node in response to an ESD event, the first reverse junction being arranged between the first lowly doped region and the first highly doped region and the second reverse junction being arranged between the second lowly doped region and the second highly doped region; wherein the ESD protection device is configured to trigger, thereby allowing current to be sunk from the first node to the second node in response to the ESD event, such that: if a leakage of the first reverse junction is lower than a leakage of the second reverse junction, a voltage over the first reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the first reverse junction is reached and, subsequently, a voltage over the second reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the second reverse junction is reached; or if the leakage of the second reverse junction is lower than the leakage of the first reverse junction, a voltage over the second reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the second reverse junction is reached and, subsequently, a voltage over the first reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the first reverse junction is reached. if a leakage of the first reverse junction is lower than a leakage of the second reverse junction, a voltage over the first reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the first reverse junction is reached and, subsequently, a voltage over the second reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the second reverse junction is reached; or if the leakage of the second reverse junction is lower than the leakage of the first reverse junction, a voltage over the second reverse junction follows the voltage rising at the first node until the reverse breakdown voltage of the second reverse junction is reached and, subsequently, a voltage over the first reverse junction follows a further rise of the voltage at the first node until the reverse breakdown voltage of the first reverse junction is reached.