An image intensifier for obtaining an intensified display of a scene, the image intensifier comprising a vacuum module comprising: - a photocathode for creating an electron image from the scene when imaged onto the photocathode; - an electron multiplier for intensifying the electron image via electron multiplication, thereby obtaining a multiplied electron image; - a phosphorous screen for converting the multiplied electron image into visible light to obtain the intensified display of the scene; and - a thin film arranged between an output surface of the electron multiplier and the phosphorous screen so that the electrons emitted from the electron multiplier are released into the thin film, the thin film having an electron receiving side oriented towards the output surface of the electron multiplier and an electron emitting side oriented towards the phosphorous screen, the thin film consisting of an electron energy absorption layer at the electron receiving side of the thin film and an exit layer at the electron emitting side of the thin film, wherein: - the exit layer comprises an alkali metal and/or an oxide of an alkali metal to provide the thin film with a surface at the electron emitting side having a negative electron affinity, and - the electron energy absorption layer is a semi-conductor or insulator having a crystalline structure comprising a band gap equal to or larger than 1eV and being made out of one of: a group IV semiconductor selected from: Diamond, Graphene, SiC; a group III-V semiconductor selected from: BN, BP, BAs, AIN, AlP, AlAs, AlSb, GaN, GaP, GaAs, InP; a group II-VI semiconductor selected from: CdSe, CdS, CdTe, ZnO, ZnSe, SnS, ZnTe; an oxide selected from: MgO, TiO 2, SnO 2, Al 2 O 3 a nitride in the form of Si 3 N 4, and - the thickness of the electron energy absorption layer is selected equal or below 200% of the carrier diffusion length of the electron energy absorption layer. - a photocathode for creating an electron image from the scene when imaged onto the photocathode; - an electron multiplier for intensifying the electron image via electron multiplication, thereby obtaining a multiplied electron image; - a phosphorous screen for converting the multiplied electron image into visible light to obtain the intensified display of the scene; and - a thin film arranged between an output surface of the electron multiplier and the phosphorous screen so that the electrons emitted from the electron multiplier are released into the thin film, the thin film having an electron receiving side oriented towards the output surface of the electron multiplier and an electron emitting side oriented towards the phosphorous screen, the thin film consisting of an electron energy absorption layer at the electron receiving side of the thin film and an exit layer at the electron emitting side of the thin film, - the exit layer comprises an alkali metal and/or an oxide of an alkali metal to provide the thin film with a surface at the electron emitting side having a negative electron affinity, and - the electron energy absorption layer is a semi-conductor or insulator having a crystalline structure comprising a band gap equal to or larger than 1eV and being made out of one of: a group IV semiconductor selected from: Diamond, Graphene, SiC; a group III-V semiconductor selected from: BN, BP, BAs, AIN, AlP, AlAs, AlSb, GaN, GaP, GaAs, InP; a group II-VI semiconductor selected from: CdSe, CdS, CdTe, ZnO, ZnSe, SnS, ZnTe; an oxide selected from: MgO, TiO 2, SnO 2, Al 2 O 3 a nitride in the form of Si 3 N 4, and a group IV semiconductor selected from: Diamond, Graphene, SiC; a group III-V semiconductor selected from: BN, BP, BAs, AIN, AlP, AlAs, AlSb, GaN, GaP, GaAs, InP; a group II-VI semiconductor selected from: CdSe, CdS, CdTe, ZnO, ZnSe, SnS, ZnTe; an oxide selected from: MgO, TiO 2, SnO 2, Al 2 O 3 a nitride in the form of Si 3 N 4, and - the thickness of the electron energy absorption layer is selected equal or below 200% of the carrier diffusion length of the electron energy absorption layer.