Stack-shaped Schottky diode, comprising a stack with an upper side and a lower side, wherein the stack comprises at least three semiconductor layers (20, 22, 24), - a first terminal contact layer connected by material couple with the lower side of the stack and - a second terminal contact layer connected with the upper side of the stack, wherein the second terminal contact layer comprises a metal or a metallic compound or consists of a metal or a metallic compound and forms a Schottky contact and wherein the second terminal contact layer is arranged in a subregion of the upper side and the second terminal contact layer is of four-cornered configuration, - a first semiconductor layer constructed as an n + layer is arranged at the lower side of the stack and the first semiconductor layer has a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness between 50 μm and 400 μm and the first semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - a second semiconductor layer constructed as a n - layer is arranged on the first semiconductor layer and the second semiconductor layer has a doping substance concentration between 10 12 and 10 16 N/cm 3 and a layer thickness between 10 μm and 300 μm and the second semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - a third semiconductor layer constructed as a p - layer is arranged on the second semiconductor layer and the third semiconductor layer has a doping substance concentration between 10 12 and 10 16 N/cm 3 and a layer thickness between 10 nm and 10 um and the third semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - the stack is of monolithic construction or the stack has a semiconductor bond between the second semiconductor layer and the third semiconductor layer, - the stack comprises a plurality of mutually spaced-apart p + regions (60, 62; 60.1 - 60.7) and the p + regions (60, 62; 60.1 - 60.7) are constructed as ribs extending parallel to the upper side of the stack, - the p + regions (60, 62; 60.1 - 60.7) have a doping substance concentration of 5 • 10 18 to 5 • 10 20 N/cm 3, and - the p + regions (60, 62; 60.1 - 60.7) reach from the upper side of the stack as far as into the second semiconductor layer, - two edges, which extend parallel to the p + regions, of the second terminal contact layer extend within the p + regions (60, 60.1 - 60.7, 62). - a first terminal contact layer connected by material couple with the lower side of the stack and - a second terminal contact layer connected with the upper side of the stack, wherein the second terminal contact layer comprises a metal or a metallic compound or consists of a metal or a metallic compound and forms a Schottky contact and wherein the second terminal contact layer is arranged in a subregion of the upper side and the second terminal contact layer is of four-cornered configuration, - a first semiconductor layer constructed as an n + layer is arranged at the lower side of the stack and the first semiconductor layer has a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness between 50 μm and 400 μm and the first semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - a second semiconductor layer constructed as a n - layer is arranged on the first semiconductor layer and the second semiconductor layer has a doping substance concentration between 10 12 and 10 16 N/cm 3 and a layer thickness between 10 μm and 300 μm and the second semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - a third semiconductor layer constructed as a p - layer is arranged on the second semiconductor layer and the third semiconductor layer has a doping substance concentration between 10 12 and 10 16 N/cm 3 and a layer thickness between 10 nm and 10 um and the third semiconductor layer comprises a GaAs compound or consists of a GaAs compound, - the stack is of monolithic construction or the stack has a semiconductor bond between the second semiconductor layer and the third semiconductor layer, - the stack comprises a plurality of mutually spaced-apart p + regions (60, 62; 60.1 - 60.7) and the p + regions (60, 62; 60.1 - 60.7) are constructed as ribs extending parallel to the upper side of the stack, - the p + regions (60, 62; 60.1 - 60.7) have a doping substance concentration of 5 • 10 18 to 5 • 10 20 N/cm 3, and - the p + regions (60, 62; 60.1 - 60.7) reach from the upper side of the stack as far as into the second semiconductor layer, - two edges, which extend parallel to the p + regions, of the second terminal contact layer extend within the p + regions (60, 60.1 - 60.7, 62).