A pixel architecture for detection of incident light; said pixel architecture comprising: an absorption layer, which is configured to extend in a first plane, the absorption layer being configured for back-side illumination and being configured to generate charges in response to incident light on an interface of the absorption layer and to transport charges in a direction perpendicular to the first plane; a semiconductor charge-transport layer with a charge-dispatch region and a charge node (128, 130); the charge-transport layer being arranged to extend in a second plane parallel to the first plane, the charge-transport layer being configured to receive generated charges from the absorption layer and to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein said charge-transport layer further comprises a bias region, and wherein the charge-dispatch region, which forms a dedicated region in a lateral direction parallel to the second plane of the charge-transport layer is associated with the bias region; an electric connection connecting to the bias region for providing a selectable bias voltage to the bias region; and at least one transfer gate (124, 126) associated with an area adjoining to the charge-dispatch region in the lateral direction, wherein the doped regions and the bias region have a different doping in relation to a bulk substrate of the charge-transport layer and wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate (124, 126), transfer of charges from the charge-dispatch region in the lateral direction to the charge node (128, 130), characterized in that a plurality of doped regions are arranged at different depths in the charge-transport layer, wherein the doped regions have different lateral extensions at different depths and wherein a lateral extension is larger closer to a surface of the charge-transport layer facing away from the absorption layer, such that a doped region forms a terrace-type structure in the charge-transport layer. an absorption layer, which is configured to extend in a first plane, the absorption layer being configured for back-side illumination and being configured to generate charges in response to incident light on an interface of the absorption layer and to transport charges in a direction perpendicular to the first plane; a semiconductor charge-transport layer with a charge-dispatch region and a charge node (128, 130); the charge-transport layer being arranged to extend in a second plane parallel to the first plane, the charge-transport layer being configured to receive generated charges from the absorption layer and to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein said charge-transport layer further comprises a bias region, and wherein the charge-dispatch region, which forms a dedicated region in a lateral direction parallel to the second plane of the charge-transport layer is associated with the bias region; an electric connection connecting to the bias region for providing a selectable bias voltage to the bias region; and at least one transfer gate (124, 126) associated with an area adjoining to the charge-dispatch region in the lateral direction, wherein the doped regions and the bias region have a different doping in relation to a bulk substrate of the charge-transport layer and wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate (124, 126), transfer of charges from the charge-dispatch region in the lateral direction to the charge node (128, 130), characterized in that a plurality of doped regions are arranged at different depths in the charge-transport layer, wherein the doped regions have different lateral extensions at different depths and wherein a lateral extension is larger closer to a surface of the charge-transport layer facing away from the absorption layer, such that a doped region forms a terrace-type structure in the charge-transport layer.