A light emitting device comprising: a first conductive type semiconductor layer (115; 346); an active layer (120; 344) disposed on the first conductive type semiconductor layer; a tunnel junction layer (125; 330) comprising a second conductive type nitride semiconductor layer (130; 334) and a first conductive type nitride semiconductor layer (140; 332) disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned; a first electrode (152; 360) disposed on the first conductive type semiconductor layer; and a second electrode (210;315;310) disposed on the first conductive type nitride semiconductor layer of the tunnel junction layer, wherein a portion of the second electrode (210;315;310) is in schottky contact with the second conductive type nitride semiconductor layer (130; 334) of the tunnel junction layer through the first conductive type nitride semiconductor layer (140; 332) of the tunnel junction layer, and characterised in that the second electrode (210;315;310) comprises: a first contact part (201;311;362) in ohmic contact with an upper surface of the first conductive type nitride semiconductor layer (140;332) of the tunnel junction layer (125;330) and a through portion of the first conductive type nitride semiconductor layer of the tunnel junction layer; and a second contact part (203;312;364) in schottky contact with the second conductive type nitride semiconductor layer (130;334) of the tunnel junction layer. a first conductive type semiconductor layer (115; 346); an active layer (120; 344) disposed on the first conductive type semiconductor layer; a tunnel junction layer (125; 330) comprising a second conductive type nitride semiconductor layer (130; 334) and a first conductive type nitride semiconductor layer (140; 332) disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned; a first electrode (152; 360) disposed on the first conductive type semiconductor layer; and a second electrode (210;315;310) disposed on the first conductive type nitride semiconductor layer of the tunnel junction layer, wherein a portion of the second electrode (210;315;310) is in schottky contact with the second conductive type nitride semiconductor layer (130; 334) of the tunnel junction layer through the first conductive type nitride semiconductor layer (140; 332) of the tunnel junction layer, and characterised in that the second electrode (210;315;310) comprises: a first contact part (201;311;362) in ohmic contact with an upper surface of the first conductive type nitride semiconductor layer (140;332) of the tunnel junction layer (125;330) and a through portion of the first conductive type nitride semiconductor layer of the tunnel junction layer; and a second contact part (203;312;364) in schottky contact with the second conductive type nitride semiconductor layer (130;334) of the tunnel junction layer. a first contact part (201;311;362) in ohmic contact with an upper surface of the first conductive type nitride semiconductor layer (140;332) of the tunnel junction layer (125;330) and a through portion of the first conductive type nitride semiconductor layer of the tunnel junction layer; and a second contact part (203;312;364) in schottky contact with the second conductive type nitride semiconductor layer (130;334) of the tunnel junction layer.