A method for producing an optoelectronic semiconductor device comprising at least the following steps: - Providing a carrier arrangement comprising a carrier body, an electrically insulating intermediate layer arranged on an outer surface of the carrier body and a utility layer arranged on an outer surface of the intermediate layer facing away from the carrier body; - Inserting of at least two openings arranged at a distance from one another in the lateral direction into the utility layer via an outer surface of the utility layer facing away from the carrier body, wherein the openings extend completely through the utility layer in the vertical direction and each opening comprises a bottom surface which is formed completely by the intermediate layer; - Electrically insulating side surfaces of the openings and the outer surface of the utility layer facing away from the carrier body; - Arranging electrically conductive material at least in places in the openings, characterized in that - after completion of the optoelectronic semiconductor component, the electrically conductive material comprises at least one interruption in its course along the outer surface of the utility layer in the lateral direction between adjacent openings, - Arranging at least one optoelectronic semiconductor body on the outer surface of the utility layer, the optoelectronic semiconductor body comprising at least one active zone suitable for generating or detecting electromagnetic radiation, and being electrically conductively connected to the electrically conductive material, and - Forming at least one protective diode structure in the utility layer, the protective diode structure being electrically connected to the semiconductor body. - Providing a carrier arrangement comprising a carrier body, an electrically insulating intermediate layer arranged on an outer surface of the carrier body and a utility layer arranged on an outer surface of the intermediate layer facing away from the carrier body; - Inserting of at least two openings arranged at a distance from one another in the lateral direction into the utility layer via an outer surface of the utility layer facing away from the carrier body, wherein the openings extend completely through the utility layer in the vertical direction and each opening comprises a bottom surface which is formed completely by the intermediate layer; - Electrically insulating side surfaces of the openings and the outer surface of the utility layer facing away from the carrier body; - Arranging electrically conductive material at least in places in the openings, characterized in that - after completion of the optoelectronic semiconductor component, the electrically conductive material comprises at least one interruption in its course along the outer surface of the utility layer in the lateral direction between adjacent openings, - Arranging at least one optoelectronic semiconductor body on the outer surface of the utility layer, the optoelectronic semiconductor body comprising at least one active zone suitable for generating or detecting electromagnetic radiation, and being electrically conductively connected to the electrically conductive material, and - Forming at least one protective diode structure in the utility layer, the protective diode structure being electrically connected to the semiconductor body.