A semiconductor device, comprising: a substrate; a first magnetic tunnel junction, MTJ, structure disposed on the substrate; a second MTJ structure disposed on the substrate; an interconnection structure disposed on the substrate and located between the first MTJ structure and the second MTJ structure in a first horizontal direction, wherein the interconnection structure comprises: a first metal interconnection; and a second metal interconnection disposed on and contacting the first metal interconnection; a third metal interconnection disposed on and contacting the first MTJ structure; a fourth metal interconnection disposed on and contacting the second MTJ structure; a fifth metal interconnection disposed under and contacting the first MTJ structure; and a sixth metal interconnection disposed under and contacting the second MTJ structure, wherein the first metal interconnection is located between the fifth metal interconnection and the sixth metal interconnection in the first horizontal direction and wherein a bottom surface of the first metal interconnection, a bottom surface of the fifth metal interconnection, and a bottom surface of the sixth metal interconnection are coplanar and the second metal interconnection is directly connected with the first metal interconnection; characterized in that a top surface of the first metal interconnection is lower than a top surface of the fifth metal interconnection and a top surface of the sixth metal interconnection in a thickness direction of the substrate, and a material composition of the second metal interconnection is different from a material composition of the first metal interconnection. a substrate; a first magnetic tunnel junction, MTJ, structure disposed on the substrate; a second MTJ structure disposed on the substrate; an interconnection structure disposed on the substrate and located between the first MTJ structure and the second MTJ structure in a first horizontal direction, wherein the interconnection structure comprises: a first metal interconnection; and a second metal interconnection disposed on and contacting the first metal interconnection; a third metal interconnection disposed on and contacting the first MTJ structure; a fourth metal interconnection disposed on and contacting the second MTJ structure; a fifth metal interconnection disposed under and contacting the first MTJ structure; and a sixth metal interconnection disposed under and contacting the second MTJ structure, wherein the first metal interconnection is located between the fifth metal interconnection and the sixth metal interconnection in the first horizontal direction and wherein a bottom surface of the first metal interconnection, a bottom surface of the fifth metal interconnection, and a bottom surface of the sixth metal interconnection are coplanar and the second metal interconnection is directly connected with the first metal interconnection; a first metal interconnection; and a second metal interconnection disposed on and contacting the first metal interconnection; a third metal interconnection disposed on and contacting the first MTJ structure; a fourth metal interconnection disposed on and contacting the second MTJ structure; a fifth metal interconnection disposed under and contacting the first MTJ structure; and a sixth metal interconnection disposed under and contacting the second MTJ structure, wherein the first metal interconnection is located between the fifth metal interconnection and the sixth metal interconnection in the first horizontal direction and wherein a bottom surface of the first metal interconnection, a bottom surface of the fifth metal interconnection, and a bottom surface of the sixth metal interconnection are coplanar and the second metal interconnection is directly connected with the first metal interconnection; characterized in that a top surface of the first metal interconnection is lower than a top surface of the fifth metal interconnection and a top surface of the sixth metal interconnection in a thickness direction of the substrate, and a material composition of the second metal interconnection is different from a material composition of the first metal interconnection.