An emission-control circuit for a display apparatus, the display apparatus comprising a plurality of pixels, each pixel comprising at least one organic light emitting diode, and the emission-control circuit being configured to control light emission of the organic light emitting diode (OLED), the emission-control circuit comprising: a third TFT; a fourth TFT; a fifth TFT; a sixth TFT; a second capacitor; wherein the third TFT has a source node configured to be provided with a system high voltage level V GH, and a drain node coupled to a second common node shared with a drain node of the fifth TFT and a first terminal of the second capacitor; the fourth TFT has a source node configured to be provided with the system high voltage level (V GH); the second capacitor has a second terminal configured to be provided with a third control signal; the fifth TFT has a gate controlled by a fourth control signal and a source node configured to be provided with a system low voltage level (V GL); and the sixth TFT has a gate coupled to the second common node, a source node configured to be provided with a fifth control signal, and a drain node coupled to a drain node of the fourth TFT for outputting an emission control signal, characterized in that: the emission-control circuit further comprises: a light sensor (20, PN) configured to detect an intensity of emitted light of the OLED, a first thin-film transistor, TFT, (Tl), a second TFT, and a first capacitor (C1 1); and in that the first capacitor has a first terminal configured to be provided with a second system low voltage level (Vcom) and a second terminal coupled to a first common node shared with a cathode of the light sensor (20, PN) and source nodes of the first TFT and the second TFT; the first TFT (Tl) has a gate controlled by a first control signal (Reset1) and a drain node configured to be provided with the second system low voltage level (Vcom), and the second TFT has a gate controlled by a second control signal and a drain node coupled to gates of the third TFT and the fourth TFT. a third TFT; a fourth TFT; a fifth TFT; a sixth TFT; a second capacitor; wherein the third TFT has a source node configured to be provided with a system high voltage level V GH, and a drain node coupled to a second common node shared with a drain node of the fifth TFT and a first terminal of the second capacitor; the fourth TFT has a source node configured to be provided with the system high voltage level (V GH); the second capacitor has a second terminal configured to be provided with a third control signal; the fifth TFT has a gate controlled by a fourth control signal and a source node configured to be provided with a system low voltage level (V GL); and the sixth TFT has a gate coupled to the second common node, a source node configured to be provided with a fifth control signal, and a drain node coupled to a drain node of the fourth TFT for outputting an emission control signal, characterized in that: the emission-control circuit further comprises: a light sensor (20, PN) configured to detect an intensity of emitted light of the OLED, a first thin-film transistor, TFT, (Tl), a second TFT, and a first capacitor (C1 1); and in that the first capacitor has a first terminal configured to be provided with a second system low voltage level (Vcom) and a second terminal coupled to a first common node shared with a cathode of the light sensor (20, PN) and source nodes of the first TFT and the second TFT; the first TFT (Tl) has a gate controlled by a first control signal (Reset1) and a drain node configured to be provided with the second system low voltage level (Vcom), and the second TFT has a gate controlled by a second control signal and a drain node coupled to gates of the third TFT and the fourth TFT. the emission-control circuit further comprises: a light sensor (20, PN) configured to detect an intensity of emitted light of the OLED, a first thin-film transistor, TFT, (Tl), a second TFT, and a first capacitor (C1 1); and in that the first capacitor has a first terminal configured to be provided with a second system low voltage level (Vcom) and a second terminal coupled to a first common node shared with a cathode of the light sensor (20, PN) and source nodes of the first TFT and the second TFT; the first TFT (Tl) has a gate controlled by a first control signal (Reset1) and a drain node configured to be provided with the second system low voltage level (Vcom), and the second TFT has a gate controlled by a second control signal and a drain node coupled to gates of the third TFT and the fourth TFT.