A high voltage integrated circuit comprising: a high voltage junction terminating structure (HVJT) comprising: a first region of first conductivity type (p); an eighth region of second conductivity type (n) formed in a selected area of a first major surface of the first region, the eighth region and the first region forming a second pn junction therebetween; and a ninth region of first conductivity type formed in a selected area of a surface layer of the eighth region, the eighth region and the ninth region forming a third pn junction therebetween; a second-conductivity-type-channel high voltage MIS transistor comprising a first drain electrode disposed on one side of the high voltage junction terminating structure, such that the first drain electrode is electrically connected to the eighth region; a base region of first conductivity type formed on the other side of the high voltage junction terminating structure, such that the base region is in contact with the ninth region; a source region of second conductivity type formed in a selected area of a surface layer of the base region; a channel region of second conductivity type formed in the surface layer of the base region interposed between the eighth region and the source region of second conductivity type; a first gate insulating film formed on the channel region of second conductivity type; a third gate electrode formed on the first gate insulating film; and a first source electrode electrically connected to at least the source region of second conductivity type; a second region of second conductivity type (n) surrounded by the high voltage junction terminating structure (HVJT) and electrically connected to the eighth region; a third region of first conductivity type (p) formed in a selected area of a surface of the second region; a first-conductivity-type-channel MIS transistor (pchMOSFET) formed in the surface of the second region; and a second-conductivity-type-channel MIS transistor (nchMOSFET) formed in a surface of the third region. a high voltage junction terminating structure (HVJT) comprising: a first region of first conductivity type (p); an eighth region of second conductivity type (n) formed in a selected area of a first major surface of the first region, the eighth region and the first region forming a second pn junction therebetween; and a ninth region of first conductivity type formed in a selected area of a surface layer of the eighth region, the eighth region and the ninth region forming a third pn junction therebetween; a second-conductivity-type-channel high voltage MIS transistor comprising a first drain electrode disposed on one side of the high voltage junction terminating structure, such that the first drain electrode is electrically connected to the eighth region; a base region of first conductivity type formed on the other side of the high voltage junction terminating structure, such that the base region is in contact with the ninth region; a source region of second conductivity type formed in a selected area of a surface layer of the base region; a channel region of second conductivity type formed in the surface layer of the base region interposed between the eighth region and the source region of second conductivity type; a first gate insulating film formed on the channel region of second conductivity type; a third gate electrode formed on the first gate insulating film; and a first source electrode electrically connected to at least the source region of second conductivity type; a second region of second conductivity type (n) surrounded by the high voltage junction terminating structure (HVJT) and electrically connected to the eighth region; a third region of first conductivity type (p) formed in a selected area of a surface of the second region; a first-conductivity-type-channel MIS transistor (pchMOSFET) formed in the surface of the second region; and a second-conductivity-type-channel MIS transistor (nchMOSFET) formed in a surface of the third region.