A solid-state transducer device that converts electrical energy into electromagnetic radiation, comprising: a radiation transducer defined by a light-emitting diode including: a first semiconductor material, a first contact connected to the first semiconductor material, a second semiconductor material, a second contact connected to the second semiconductor material, wherein the first contact and the second contact are at the same side of the light-emitting diode, and an active region between the first semiconductor material and the second semiconductor material; a transmissive support assembly attached to the light-emitting diode, wherein the transmissive support assembly includes: a transmissive support member having a back side facing toward the light-emitting diode, wherein the transmissive support member includes particles of converter material disposed within a matrix material, wherein the transmissive support assembly is positioned such that emissions from the radiation transducer pass through the transmissive support assembly at the back side of the transmissive support member, a first lead at the back side of the transmissive support member, wherein the first lead is soldered to the first contact, and a second lead at the back side of the transmissive support member, wherein the second lead is soldered to the second contact; characterized in that the solid-state transducer device further comprises an optically-transparent underfill material between the light-emitting diode and the transmissive support assembly, wherein the underfill material is the same as the matrix material of the transmissive support member, wherein the transmissive support assembly further comprises an edge reflector configured to prevent or diminish light piping and emission loss through the edges of the transmissive support assembly. a radiation transducer defined by a light-emitting diode including: a first semiconductor material, a first contact connected to the first semiconductor material, a second semiconductor material, a second contact connected to the second semiconductor material, wherein the first contact and the second contact are at the same side of the light-emitting diode, and an active region between the first semiconductor material and the second semiconductor material; a first semiconductor material, a first contact connected to the first semiconductor material, a second semiconductor material, a second contact connected to the second semiconductor material, wherein the first contact and the second contact are at the same side of the light-emitting diode, and an active region between the first semiconductor material and the second semiconductor material; a transmissive support assembly attached to the light-emitting diode, wherein the transmissive support assembly includes: a transmissive support member having a back side facing toward the light-emitting diode, wherein the transmissive support member includes particles of converter material disposed within a matrix material, wherein the transmissive support assembly is positioned such that emissions from the radiation transducer pass through the transmissive support assembly at the back side of the transmissive support member, a first lead at the back side of the transmissive support member, wherein the first lead is soldered to the first contact, and a second lead at the back side of the transmissive support member, wherein the second lead is soldered to the second contact; a transmissive support member having a back side facing toward the light-emitting diode, wherein the transmissive support member includes particles of converter material disposed within a matrix material, wherein the transmissive support assembly is positioned such that emissions from the radiation transducer pass through the transmissive support assembly at the back side of the transmissive support member, a first lead at the back side of the transmissive support member, wherein the first lead is soldered to the first contact, and a second lead at the back side of the transmissive support member, wherein the second lead is soldered to the second contact; characterized in that the solid-state transducer device further comprises an optically-transparent underfill material between the light-emitting diode and the transmissive support assembly, wherein the underfill material is the same as the matrix material of the transmissive support member, wherein the transmissive support assembly further comprises an edge reflector configured to prevent or diminish light piping and emission loss through the edges of the transmissive support assembly.