A light emitting device comprising: a conductive support member; a light emitting part comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on the conductive support member, wherein the second conductive type semiconductor layer is electrically connected to the conductive support member with the second conductive type semiconductor layer facing the conductive support member, wherein the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer are formed of a group III-V compound semiconductor; an electro-static discharge protection part comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on the conductive support member with the second conductive type semiconductor layer facing the conductive support member; a first connection layer including a first portion electrically connected to the first conductive type semiconductor layer of the light emitting part and a second portion extending from the first portion and electrically connected to the second conductive type semiconductor layer of the ESD protection part; and characterized in that the first portion of the first connection layer is between the respective active layers of the light emitting part and the ESD protection part and between the respective second conductive type semiconductor layers of the light emitting part and the ESD protection part, and passes only through a first layer consisting of the second conductive type semiconductor layers of the light emitting part and the ESD protection part and a second layer consisting of the active layers of the light emitting part and the ESD protection part, the light emitting device further comprises a protection member on the ESD protection part and the first connection layer and in that the first portion of the first connection layer is electrically connected to a Ga-face region which is formed within the first conductive type semiconductor layer of the light emitting part. a conductive support member; a light emitting part comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on the conductive support member, wherein the second conductive type semiconductor layer is electrically connected to the conductive support member with the second conductive type semiconductor layer facing the conductive support member, wherein the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer are formed of a group III-V compound semiconductor; an electro-static discharge protection part comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on the conductive support member with the second conductive type semiconductor layer facing the conductive support member; a first connection layer including a first portion electrically connected to the first conductive type semiconductor layer of the light emitting part and a second portion extending from the first portion and electrically connected to the second conductive type semiconductor layer of the ESD protection part; and characterized in that the first portion of the first connection layer is between the respective active layers of the light emitting part and the ESD protection part and between the respective second conductive type semiconductor layers of the light emitting part and the ESD protection part, and passes only through a first layer consisting of the second conductive type semiconductor layers of the light emitting part and the ESD protection part and a second layer consisting of the active layers of the light emitting part and the ESD protection part, the light emitting device further comprises a protection member on the ESD protection part and the first connection layer and in that the first portion of the first connection layer is electrically connected to a Ga-face region which is formed within the first conductive type semiconductor layer of the light emitting part.