A method of fabricating a semiconductor device, comprising: providing a semiconductor wafer having a semiconductive substrate, a first surface and a second surface, the first and second surfaces disposed on opposite sides of the substrate; processing the semiconductor wafer at the first surface, comprising: forming at least one transistor including at least one doping region disposed in the substrate adjacent to the first surface; forming at least one shallow trench in the substrate extending from the first surface and filling the at least one shallow trench with an insulating material (101a, 101b); forming at least one dielectric layer and forming at least one wiring, the at least one dielectric layer disposed on the first surface and the at least one wiring embedded in the at least one dielectric layer; thereafter providing a carrier wafer and attaching the carrier wafer to the semiconductor wafer so that the first surface of the semiconductor wafer faces towards the carrier wafer; processing the semiconductor wafer at the second surface, comprising: thinning the semiconductor wafer by removing material from the second surface of the substrate; thereafter forming at least one deep trench (146a, 146b) in the substrate from the thinned second surface to extend to the insulating material (101a, 101b) filled in the at least one shallow trench; filling the at least one deep trench with an insulating material to form a barrier between the at least one doping region and another semiconductor device including a doping region other than the at least one doping region; forming at least one via hole (148, 148) in the substrate extending from the thinned second surface to the wiring; and forming an electrically conductive path that is coupled to the wiring and that extends through the at least one via hole to the thinned second surface of the semiconductor wafer. providing a semiconductor wafer having a semiconductive substrate, a first surface and a second surface, the first and second surfaces disposed on opposite sides of the substrate; processing the semiconductor wafer at the first surface, comprising: forming at least one transistor including at least one doping region disposed in the substrate adjacent to the first surface; forming at least one shallow trench in the substrate extending from the first surface and filling the at least one shallow trench with an insulating material (101a, 101b); forming at least one dielectric layer and forming at least one wiring, the at least one dielectric layer disposed on the first surface and the at least one wiring embedded in the at least one dielectric layer; forming at least one transistor including at least one doping region disposed in the substrate adjacent to the first surface; forming at least one shallow trench in the substrate extending from the first surface and filling the at least one shallow trench with an insulating material (101a, 101b); forming at least one dielectric layer and forming at least one wiring, the at least one dielectric layer disposed on the first surface and the at least one wiring embedded in the at least one dielectric layer; thereafter providing a carrier wafer and attaching the carrier wafer to the semiconductor wafer so that the first surface of the semiconductor wafer faces towards the carrier wafer; processing the semiconductor wafer at the second surface, comprising: thinning the semiconductor wafer by removing material from the second surface of the substrate; thereafter forming at least one deep trench (146a, 146b) in the substrate from the thinned second surface to extend to the insulating material (101a, 101b) filled in the at least one shallow trench; filling the at least one deep trench with an insulating material to form a barrier between the at least one doping region and another semiconductor device including a doping region other than the at least one doping region; forming at least one via hole (148, 148) in the substrate extending from the thinned second surface to the wiring; and forming an electrically conductive path that is coupled to the wiring and that extends through the at least one via hole to the thinned second surface of the semiconductor wafer. thinning the semiconductor wafer by removing material from the second surface of the substrate; thereafter forming at least one deep trench (146a, 146b) in the substrate from the thinned second surface to extend to the insulating material (101a, 101b) filled in the at least one shallow trench; filling the at least one deep trench with an insulating material to form a barrier between the at least one doping region and another semiconductor device including a doping region other than the at least one doping region; forming at least one via hole (148, 148) in the substrate extending from the thinned second surface to the wiring; and forming an electrically conductive path that is coupled to the wiring and that extends through the at least one via hole to the thinned second surface of the semiconductor wafer.