A power semiconductor module comprising: a module housing; a substrate; a semiconductor chip attached to the substrate and disposed in the module housing; a dielectric first encapsulation disposed in the module housing, in physical contact with both the semiconductor chip and the substrate and having a first modulus of elasticity; a dielectric second encapsulation disposed in the module housing and having a second modulus of elasticity; wherein the first encapsulation is a silicone rubber and disposed between the substrate and the second encapsulation; the semiconductor chip is disposed between the first encapsulation and the substrate; the first modulus of elasticity is greater than the second modulus of elasticity; and the power semiconductor module further comprising a bond wire, wherein: the semiconductor chip comprises a first chip metallization; the bond wire is, at a first bonding location, directly bonded to the first chip metallization; the bond wire is, at least at the first bonding location, embedded in the first encapsulation; the substrate comprises a dielectric insulation carrier, and a first substrate metallization layer attached to the insulation carrier; the semiconductor chip is disposed on the first substrate metallization layer; the bond wire is, at a second bonding location, directly bonded to the first substrate metallization layer; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation; characterized in that the second encapsulation consists of or comprises a silicone foam. a module housing; a substrate; a semiconductor chip attached to the substrate and disposed in the module housing; a dielectric first encapsulation disposed in the module housing, in physical contact with both the semiconductor chip and the substrate and having a first modulus of elasticity; a dielectric second encapsulation disposed in the module housing and having a second modulus of elasticity; wherein the first encapsulation is a silicone rubber and disposed between the substrate and the second encapsulation; the semiconductor chip is disposed between the first encapsulation and the substrate; the first modulus of elasticity is greater than the second modulus of elasticity; and the power semiconductor module further comprising a bond wire, wherein: the semiconductor chip comprises a first chip metallization; the bond wire is, at a first bonding location, directly bonded to the first chip metallization; the bond wire is, at least at the first bonding location, embedded in the first encapsulation; the substrate comprises a dielectric insulation carrier, and a first substrate metallization layer attached to the insulation carrier; the semiconductor chip is disposed on the first substrate metallization layer; the bond wire is, at a second bonding location, directly bonded to the first substrate metallization layer; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation; characterized in that the second encapsulation consists of or comprises a silicone foam. the semiconductor chip comprises a first chip metallization; the bond wire is, at a first bonding location, directly bonded to the first chip metallization; the bond wire is, at least at the first bonding location, embedded in the first encapsulation; the substrate comprises a dielectric insulation carrier, and a first substrate metallization layer attached to the insulation carrier; the semiconductor chip is disposed on the first substrate metallization layer; the bond wire is, at a second bonding location, directly bonded to the first substrate metallization layer; and the bond wire is partly embedded in both the first encapsulation and the second encapsulation; characterized in that the second encapsulation consists of or comprises a silicone foam.