A solar cell module (130, 230), comprising: a first solar cell and a second solar cell disposed to be adjacent to each other, each of the first solar cell and the second solar cell including: a flexible substrate (231a, 232a); a lower electrode (231b, 232b) formed on the flexible substrate (231a, 232a); a III-V group compound semiconductor (231c, 232c) formed on a part of the lower electrode (231b, 232b) such that a portion of the lower electrode (231b, 232b) is exposed; and an upper electrode (231d, 232d) formed on the III-V group compound semiconductor (231c, 232c); and an interconnector disposed to cover a space between the first and second solar cells (231, 232), and configured to electrically connect the lower electrode of the first solar cell and the upper electrode of the second solar cell, wherein the interconnector includes: a non-conducting and elastic base; a conductive layer disposed on one surface of the base, the conductive layer being electrically connected to the lower electrode of the first solar cell and the upper electrode of the second solar cell; and an insulating layer disposed on the conductive layer, wherein the conductive layer extends on both sides of the insulating layer, and wherein one side of the conductive layer contacts the lower electrode of the first solar cell, and another side of the conductive layer contacts the upper electrode of the second solar cell. a first solar cell and a second solar cell disposed to be adjacent to each other, each of the first solar cell and the second solar cell including: a flexible substrate (231a, 232a); a lower electrode (231b, 232b) formed on the flexible substrate (231a, 232a); a III-V group compound semiconductor (231c, 232c) formed on a part of the lower electrode (231b, 232b) such that a portion of the lower electrode (231b, 232b) is exposed; and an upper electrode (231d, 232d) formed on the III-V group compound semiconductor (231c, 232c); and a flexible substrate (231a, 232a); a lower electrode (231b, 232b) formed on the flexible substrate (231a, 232a); a III-V group compound semiconductor (231c, 232c) formed on a part of the lower electrode (231b, 232b) such that a portion of the lower electrode (231b, 232b) is exposed; and an upper electrode (231d, 232d) formed on the III-V group compound semiconductor (231c, 232c); and an interconnector disposed to cover a space between the first and second solar cells (231, 232), and configured to electrically connect the lower electrode of the first solar cell and the upper electrode of the second solar cell, wherein the interconnector includes: a non-conducting and elastic base; a conductive layer disposed on one surface of the base, the conductive layer being electrically connected to the lower electrode of the first solar cell and the upper electrode of the second solar cell; and an insulating layer disposed on the conductive layer, a non-conducting and elastic base; a conductive layer disposed on one surface of the base, the conductive layer being electrically connected to the lower electrode of the first solar cell and the upper electrode of the second solar cell; and an insulating layer disposed on the conductive layer, wherein the conductive layer extends on both sides of the insulating layer, and wherein one side of the conductive layer contacts the lower electrode of the first solar cell, and another side of the conductive layer contacts the upper electrode of the second solar cell.