A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprising: - a membrane as part of a semiconductor substrate for being deformed due to the external pressure, having a membrane edge and a membrane thickness; - a first bridge circuit comprising a first resistor pair located on or adjacent to a first side portion of the membrane, and a second resistor pair located on or adjacent to a second side portion of the membrane; - the first resistor pair comprising a first resistor connected between a first bias node and a first output node, and a second resistor connected between the first output node and a second bias node; - the second resistor pair comprising a third resistor connected between the first bias node and a second output node, and a fourth resistor connected between the second output node and the second bias node; - at least one of the first and second and third and fourth resistor (R1, R2, R3, R4) comprising one or more elongated piezo-resistive strips(8, 9, 10, 11) arranged for measuring deformation of the membrane due to the external pressure to be measured; wherein the ratio of a largest distance between a point of the first resistor and a point of the second resistor, and a largest dimension of the membrane is less than 50%; and wherein the ratio of a largest distance between a point of the third resistor and a point of the fourth resistor, and a largest dimension of the membrane is less than 50% and wherein the second side portion is located at substantially 90° angular distance from the first side portion as measured from a center of the membrane, and the elongated piezo-resistive strips of the first resistor are oriented orthogonal to the elongated piezo-resistive strips of the second resistor; and the elongated piezo-resistive strips of the third resistor are oriented orthogonal to the elongated piezo-resistive strips of the fourth resistor; and the elongated piezo-resistive strips of the first resistor are oriented parallel to the elongated piezo-resistive strips of the third resistor; or wherein the second side portion is located at substantially 180° angular distance from the first side portion as measured from a center of the membrane, and the elongated piezo-resistive strips of the first resistor are oriented orthogonal to the elongated piezo-resistive strips of the second resistor; and the elongated piezo-resistive strips of the third resistor are oriented orthogonal to the elongated piezo-resistive strips of the fourth resistor; and the elongated piezo-resistive strips of the first resistor are oriented orthogonal to the elongated piezo-resistive strips of the third resistor. - a membrane as part of a semiconductor substrate for being deformed due to the external pressure, having a membrane edge and a membrane thickness; - a first bridge circuit comprising a first resistor pair located on or adjacent to a first side portion of the membrane, and a second resistor pair located on or adjacent to a second side portion of the membrane; - the first resistor pair comprising a first resistor connected between a first bias node and a first output node, and a second resistor connected between the first output node and a second bias node; - the second resistor pair comprising a third resistor connected between the first bias node and a second output node, and a fourth resistor connected between the second output node and the second bias node; - at least one of the first and second and third and fourth resistor (R1, R2, R3, R4) comprising one or more elongated piezo-resistive strips(8, 9, 10, 11) arranged for measuring deformation of the membrane due to the external pressure to be measured;