An electronic device comprising: a semiconductor device provided with a plurality of bond pads (11, 12, and 13), of which bond pads a first portion is defined for ground connection and a second portion is defined for voltage supply and a third portion is defined for signal transmission, and - a carrier substrate comprising a layer of dielectric material and having a first side and an opposed second side, which are each provided with an electrically conductive layer (20B and 20C), on which first side bond pads (41, 42, and 43) are present corresponding to the bond pads of the semiconductor device, and on which second side contact pads (61, 62, and 63) for external coupling are provided, the contact pads (61, 62, and 63) and the bond pads (41, 42, and 43) being electrically interconnected according to a desired pattern, the contact pads being subdivided into a first, a second and a third portion corresponding to the portions (11, 12, and 13) of bond pads of the semiconductor device, the first and second portions (11 and 12) of the bond pads being present laterally in an inner area and the third portion being present in an outer area laterally around the inner area, wherein - the semiconductor device is coupled to the carrier substrate in a flip-chip orientation, and the bond pads (41 and 42) and the contact pads(61 and 62) for voltage supply and ground connection are located correspondingly, so as to provide a direct path from the contact pads at the second side of the substrate to the corresponding bond pads of the semiconductor device, and - the pads of the first and second portions (11, 12, 61, and 62) are arranged such that at least one direct path dedicated to voltage supply connection acts as a coaxial center conductor. a semiconductor device provided with a plurality of bond pads (11, 12, and 13), of which bond pads a first portion is defined for ground connection and a second portion is defined for voltage supply and a third portion is defined for signal transmission, and - a carrier substrate comprising a layer of dielectric material and having a first side and an opposed second side, which are each provided with an electrically conductive layer (20B and 20C), on which first side bond pads (41, 42, and 43) are present corresponding to the bond pads of the semiconductor device, and on which second side contact pads (61, 62, and 63) for external coupling are provided, the contact pads (61, 62, and 63) and the bond pads (41, 42, and 43) being electrically interconnected according to a desired pattern, the contact pads being subdivided into a first, a second and a third portion corresponding to the portions (11, 12, and 13) of bond pads of the semiconductor device, the first and second portions (11 and 12) of the bond pads being present laterally in an inner area and the third portion being present in an outer area laterally around the inner area, - a carrier substrate comprising a layer of dielectric material and having a first side and an opposed second side, which are each provided with an electrically conductive layer (20B and 20C), on which first side bond pads (41, 42, and 43) are present corresponding to the bond pads of the semiconductor device, and on which second side contact pads (61, 62, and 63) for external coupling are provided, the contact pads (61, 62, and 63) and the bond pads (41, 42, and 43) being electrically interconnected according to a desired pattern, the contact pads being subdivided into a first, a second and a third portion corresponding to the portions (11, 12, and 13) of bond pads of the semiconductor device, the first and second portions (11 and 12) of the bond pads being present laterally in an inner area and the third portion being present in an outer area laterally around the inner area, wherein - the semiconductor device is coupled to the carrier substrate in a flip-chip orientation, and - the semiconductor device is coupled to the carrier substrate in a flip-chip orientation, and the bond pads (41 and 42) and the contact pads(61 and 62) for voltage supply and ground connection are located correspondingly, so as to provide a direct path from the contact pads at the second side of the substrate to the corresponding bond pads of the semiconductor device, and - the pads of the first and second portions (11, 12, 61, and 62) are arranged such that at least one direct path dedicated to voltage supply connection acts as a coaxial center conductor. - the pads of the first and second portions (11, 12, 61, and 62) are arranged such that at least one direct path dedicated to voltage supply connection acts as a coaxial center conductor.