A display device (300, 400, 500, 600, 800, 900, 1000, 1100, 1200) comprising: is a substrate (310, 510, 610, 710, 1010); an emission layer (320, 620, 720, 1020) configured to emit light, the emission layer comprising a first semiconductor layer (321, 621, 721, 1021) provided on the substrate, an active layer (323, 623, 723, 1023) provided on the first semiconductor layer, and a second semiconductor layer (322, 622, 722, 1022) provided on the active layer; and a plurality of color converting layers (360B, 360R, 360G; 660B, 660R, 660G; 760B, 760R, 760G; 1060B, 1060R, 1060G) provided on the emission layer and configured to emit light of predetermined colors as sub-pixels from the light emitted from the emission layer; a black matrix (370, 670, 770, 1070) provided between the color converting layers (360B, 360R, 360G; 660B, 660R, 660G; 760B, 760R, 760G; 1060B, 1060R, 1060G); at least one first electrode (331, 1331) electrically connected to the first semiconductor layer; and a plurality of second electrodes (332, 632, 732, 1032) electrically connected to the second semiconductor layer, wherein the active layer (323, 623, 723, 1023) is not separated into emission areas for the sub-pixels; and wherein an area (325, 625, 725, 1025) of the second semiconductor layer (322, 622, 722, 1022) adjacent to a contact area between the second semiconductor layer and one of the plurality of second electrodes (332, 632, 732, 1032) is etched to a depth less than the thickness of the second semiconductor layer, wherein the at least one first electrode (331, 1331) is provided to correspond to at least one of the plurality of color converting layers, to form a common electrode, and the plurality of second electrodes (332, 632, 732, 1032) are provided to have a one-to-one correspondence with the plurality of color converting layers, and wherein the display device further comprises a current injection limitation layer (337, 637, 738, 1036) provided on the second semiconductor layer and configured to limit current injected from the plurality of second electrodes into the second semiconductor layer by reducing a contact area between the second semiconductor layer and the second electrodes. is a substrate (310, 510, 610, 710, 1010); an emission layer (320, 620, 720, 1020) configured to emit light, the emission layer comprising a first semiconductor layer (321, 621, 721, 1021) provided on the substrate, an active layer (323, 623, 723, 1023) provided on the first semiconductor layer, and a second semiconductor layer (322, 622, 722, 1022) provided on the active layer; and a plurality of color converting layers (360B, 360R, 360G; 660B, 660R, 660G; 760B, 760R, 760G; 1060B, 1060R, 1060G) provided on the emission layer and configured to emit light of predetermined colors as sub-pixels from the light emitted from the emission layer; a black matrix (370, 670, 770, 1070) provided between the color converting layers (360B, 360R, 360G; 660B, 660R, 660G; 760B, 760R, 760G; 1060B, 1060R, 1060G); at least one first electrode (331, 1331) electrically connected to the first semiconductor layer; and a plurality of second electrodes (332, 632, 732, 1032) electrically connected to the second semiconductor layer, wherein the active layer (323, 623, 723, 1023) is not separated into emission areas for the sub-pixels; and wherein an area (325, 625, 725, 1025) of the second semiconductor layer (322, 622, 722, 1022) adjacent to a contact area between the second semiconductor layer and one of the plurality of second electrodes (332, 632, 732, 1032) is etched to a depth less than the thickness of the second semiconductor layer, wherein the at least one first electrode (331, 1331) is provided to correspond to at least one of the plurality of color converting layers, to form a common electrode, and the plurality of second electrodes (332, 632, 732, 1032) are provided to have a one-to-one correspondence with the plurality of color converting layers, and wherein the display device further comprises a current injection limitation layer (337, 637, 738, 1036) provided on the second semiconductor layer and configured to limit current injected from the plurality of second electrodes into the second semiconductor layer by reducing a contact area between the second semiconductor layer and the second electrodes.