A light emitting device comprising the following layers: a first semiconductor layer with doping of the first type; a second semiconductor layer with doping of the second type; a light emitting region interdisposed between the first and second semiconductor layers (407,409), wherein light generated in the light emitting region is extracted from a surface of the second semiconductor layer; an electrical conducting mirror layer disposed proximal to the first semiconductor layer and distal to the second semiconductor layer and at least partially extending across a surface of the first semiconductor layer, wherein the electrical conducting mirror layer is configured to exhibit an optical reflectivity spectrum whereby integrated reflectivity for light generated in the light emitting region and incident upon the electrical conducting mirror layer is at least 60%; a first electrode disposed directly on the electrical conducting mirror, such that the first electrode is not in physical contact with the first or the second semiconductor layer (407,409); a second electrode disposed on the second semiconductor layer; and, an isolation layer disposed proximal to the electrical conducting mirror layer and distal to the first semiconductor layer, characterized in that the isolation layer is a deposited layer, which is deposited onto the electrical conducting mirror layer, either directly or on an intervening layer, if present, and which is conformal with the electrical conducting mirror layer and in that the isolation layer has a thickness in the range of 50nm to 50 micrometers and comprises an electrically insulating material with an electrical breakdown voltage of at least 0.5kV and a thermal conductivity greater than 130 W/(m·K). a first semiconductor layer with doping of the first type; a second semiconductor layer with doping of the second type; a light emitting region interdisposed between the first and second semiconductor layers (407,409), wherein light generated in the light emitting region is extracted from a surface of the second semiconductor layer; an electrical conducting mirror layer disposed proximal to the first semiconductor layer and distal to the second semiconductor layer and at least partially extending across a surface of the first semiconductor layer, wherein the electrical conducting mirror layer is configured to exhibit an optical reflectivity spectrum whereby integrated reflectivity for light generated in the light emitting region and incident upon the electrical conducting mirror layer is at least 60%; a first electrode disposed directly on the electrical conducting mirror, such that the first electrode is not in physical contact with the first or the second semiconductor layer (407,409); a second electrode disposed on the second semiconductor layer; and, an isolation layer disposed proximal to the electrical conducting mirror layer and distal to the first semiconductor layer, characterized in that the isolation layer is a deposited layer, which is deposited onto the electrical conducting mirror layer, either directly or on an intervening layer, if present, and which is conformal with the electrical conducting mirror layer and in that the isolation layer has a thickness in the range of 50nm to 50 micrometers and comprises an electrically insulating material with an electrical breakdown voltage of at least 0.5kV and a thermal conductivity greater than 130 W/(m·K).