A method for producing a component including a conductor structure (4, 41, 42) that is suitable for frequencies of more than 1 GHz, comprising the steps of: - producing a patterned glass layer (9, 91, 92, 93, 13) having at least one opening over a contact connection area (71 - 74) by vapour deposition of an at least binary material system on a substrate; and - applying at least one conductor structure (100, 111, 112, 113) onto the glass layer (9, 91, 92, 93) so that the conductor structure is in electrical contact with the contact connection area (71 - 74); wherein the step of producing a patterned glass layer (9, 91, 92, 93, 13) comprises the steps of: - applying a patterned intermediate layer that covers the contact connection area, wherein the patterned intermediate layer is formed by photolithographic patterning of a photoresist; - vapour deposition of a glass layer (9, 91, 92, 93, 13) on the substrate and on the patterned intermediate layer thereon, wherein the thickness of the glass layer (9, 91, 92, 93, 13) is less than that of the patterned intermediate layer, wherein during the vapour deposition of the glass layer (9, 91, 92, 93, 13) the substrate is held at a temperature between 50 °C and 200 °C, preferably between 80 °C and 120 °C, and wherein the vapour deposition of the glass layer (9, 91, 92, 93, 13) is accomplished by plasma ion assisted deposition, or PIAD, - removing the patterned intermediate layer so that those portions of the glass layer (9, 91, 92, 93, 13) that are on the patterned intermediate layer are removed therewith for producing the opening. - producing a patterned glass layer (9, 91, 92, 93, 13) having at least one opening over a contact connection area (71 - 74) by vapour deposition of an at least binary material system on a substrate; and - applying at least one conductor structure (100, 111, 112, 113) onto the glass layer (9, 91, 92, 93) so that the conductor structure is in electrical contact with the contact connection area (71 - 74); wherein the step of producing a patterned glass layer (9, 91, 92, 93, 13) comprises the steps of: - applying a patterned intermediate layer that covers the contact connection area, wherein the patterned intermediate layer is formed by photolithographic patterning of a photoresist; - vapour deposition of a glass layer (9, 91, 92, 93, 13) on the substrate and on the patterned intermediate layer thereon, wherein the thickness of the glass layer (9, 91, 92, 93, 13) is less than that of the patterned intermediate layer, wherein during the vapour deposition of the glass layer (9, 91, 92, 93, 13) the substrate is held at a temperature between 50 °C and 200 °C, preferably between 80 °C and 120 °C, and wherein the vapour deposition of the glass layer (9, 91, 92, 93, 13) is accomplished by plasma ion assisted deposition, or PIAD, - removing the patterned intermediate layer so that those portions of the glass layer (9, 91, 92, 93, 13) that are on the patterned intermediate layer are removed therewith for producing the opening. - applying a patterned intermediate layer that covers the contact connection area, wherein the patterned intermediate layer is formed by photolithographic patterning of a photoresist; - vapour deposition of a glass layer (9, 91, 92, 93, 13) on the substrate and on the patterned intermediate layer thereon, wherein the thickness of the glass layer (9, 91, 92, 93, 13) is less than that of the patterned intermediate layer, wherein during the vapour deposition of the glass layer (9, 91, 92, 93, 13) the substrate is held at a temperature between 50 °C and 200 °C, preferably between 80 °C and 120 °C, and wherein the vapour deposition of the glass layer (9, 91, 92, 93, 13) is accomplished by plasma ion assisted deposition, or PIAD, - removing the patterned intermediate layer so that those portions of the glass layer (9, 91, 92, 93, 13) that are on the patterned intermediate layer are removed therewith for producing the opening.