An image sensor, comprising: a semiconductor substrate comprising a first surface (FRONT) and a second surface (BACK), which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface (FRONT) toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a p-type impurity region, which is adjacent the vertical transfer gate and is provided between the vertical transfer gate and the floating diffusion region, wherein the p-type impurity region is a first p-type impurity region, the image sensor further comprising an other impurity region between and adjacent the first p-type impurity region and the floating diffusion region, wherein a p-type impurity concentration of the other impurity region is lower than a p-type impurity concentration of the first p-type impurity region, and wherein a width of the first p-type impurity region is greater than a width of the other impurity region, the image sensor further comprising: a first contact metal on the vertical transfer gate; and a second contact metal on the floating diffusion region, wherein a distance from an edge of an upper portion of the vertical transfer gate to a center axis of the second contact metal is greater than 1/2 of a distance from a center axis of a lower portion of the vertical transfer gate to the edge of the upper portion of the vertical transfer gate. a semiconductor substrate comprising a first surface (FRONT) and a second surface (BACK), which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface (FRONT) toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a p-type impurity region, which is adjacent the vertical transfer gate and is provided between the vertical transfer gate and the floating diffusion region, wherein the p-type impurity region is a first p-type impurity region, the image sensor further comprising an other impurity region between and adjacent the first p-type impurity region and the floating diffusion region, wherein a p-type impurity concentration of the other impurity region is lower than a p-type impurity concentration of the first p-type impurity region, and wherein a width of the first p-type impurity region is greater than a width of the other impurity region, the image sensor further comprising: a first contact metal on the vertical transfer gate; and a second contact metal on the floating diffusion region, wherein a distance from an edge of an upper portion of the vertical transfer gate to a center axis of the second contact metal is greater than 1/2 of a distance from a center axis of a lower portion of the vertical transfer gate to the edge of the upper portion of the vertical transfer gate. a first contact metal on the vertical transfer gate; and a second contact metal on the floating diffusion region, wherein a distance from an edge of an upper portion of the vertical transfer gate to a center axis of the second contact metal is greater than 1/2 of a distance from a center axis of a lower portion of the vertical transfer gate to the edge of the upper portion of the vertical transfer gate.