A driver circuit for controlling a P-channel Metal Oxide Semiconductor Field Effect transistor, MOSFET, including a gate terminal, a source terminal connected to a power supply and a drain terminal connected to an electrical load, the driver circuit comprising: a first voltage divider including a first dividing resistor and a second dividing resistor connected in series through a first connection node, one end of the first voltage divider being connectable to the source terminal of the P-channel MOSFET; a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal being connected to another end of the first voltage divider, and the first emitter terminal being connected to a ground; a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal being connectable to the gate terminal of the P-channel MOSFET, the second base terminal being connected to the first connection node, and the second collector terminal being connectable to the source terminal of the P-channel MOSFET; a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal being connected to the second emitter terminal, the third collector terminal being connected to the ground, and the third base terminal being connected to the first connection node; and a first resistor connected between the second collector terminal and the second emitter terminal, characterized in that the driver circuit further comprises: a second voltage divider with one end connected to the ground and the other end connected to the second emitter terminal or to the first connection node, the second voltage divider including a third dividing resistor and a fourth dividing resistor connected in series through a third connection node; a fourth sub-transistor including a fourth collector terminal, a fourth emitter terminal and a fourth base terminal, the fourth emitter terminal being connected to the ground, and the fourth base terminal being connected to the third connection node; and a discharge resistor, one end of the discharge resistor being connectable to the drain terminal of the P-channel MOSFET, and the other end of the discharge resistor being connected to the fourth collector terminal. a first voltage divider including a first dividing resistor and a second dividing resistor connected in series through a first connection node, one end of the first voltage divider being connectable to the source terminal of the P-channel MOSFET; a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal being connected to another end of the first voltage divider, and the first emitter terminal being connected to a ground; a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal being connectable to the gate terminal of the P-channel MOSFET, the second base terminal being connected to the first connection node, and the second collector terminal being connectable to the source terminal of the P-channel MOSFET; a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal being connected to the second emitter terminal, the third collector terminal being connected to the ground, and the third base terminal being connected to the first connection node; and a first resistor connected between the second collector terminal and the second emitter terminal, characterized in that the driver circuit further comprises: a second voltage divider with one end connected to the ground and the other end connected to the second emitter terminal or to the first connection node, the second voltage divider including a third dividing resistor and a fourth dividing resistor connected in series through a third connection node; a fourth sub-transistor including a fourth collector terminal, a fourth emitter terminal and a fourth base terminal, the fourth emitter terminal being connected to the ground, and the fourth base terminal being connected to the third connection node; and a discharge resistor, one end of the discharge resistor being connectable to the drain terminal of the P-channel MOSFET, and the other end of the discharge resistor being connected to the fourth collector terminal. a second voltage divider with one end connected to the ground and the other end connected to the second emitter terminal or to the first connection node, the second voltage divider including a third dividing resistor and a fourth dividing resistor connected in series through a third connection node; a fourth sub-transistor including a fourth collector terminal, a fourth emitter terminal and a fourth base terminal, the fourth emitter terminal being connected to the ground, and the fourth base terminal being connected to the third connection node; and a discharge resistor, one end of the discharge resistor being connectable to the drain terminal of the P-channel MOSFET, and the other end of the discharge resistor being connected to the fourth collector terminal.