A semiconductor light emitting device comprising: a first conductivity type semiconductor layer including first and second areas; an active layer disposed on the second area, wherein the first and second areas have a stripe shape; a second conductivity type semiconductor layer disposed on the active layer; a plurality of first and second electrode branches (411, 431) disposed and alternately formed on the first and second conductivity type semiconductor layers (410, 430), respectively, wherein the first and second electrode branches (411, 431) have a stripe shape and wherein a uniform interval is maintained between the first and second electrode branches (411, 431); a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch; wherein the first and second electrode pads (412, 432) are spatially separated from the first and second conductivity type semiconductor layers (410, 430) and electrically connected to the first and second conductivity type semiconductor layers (410, 430) through the first and second electrode branches (411, 431); an insulating part formed on the first and second conductivity type semiconductor layers (410, 430), wherein the insulating part covers upper portions of the first and second electrode branches (411, 2. 431); and at least one first conductive via electrically connected to the first electrode branch and at least one second conductive via electrically connected to the second electrode branch being penetratingly formed through portions of the insulating part in a thicknesswise direction. a first conductivity type semiconductor layer including first and second areas; an active layer disposed on the second area, wherein the first and second areas have a stripe shape; a second conductivity type semiconductor layer disposed on the active layer; a plurality of first and second electrode branches (411, 431) disposed and alternately formed on the first and second conductivity type semiconductor layers (410, 430), respectively, wherein the first and second electrode branches (411, 431) have a stripe shape and wherein a uniform interval is maintained between the first and second electrode branches (411, 431); a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch; wherein the first and second electrode pads (412, 432) are spatially separated from the first and second conductivity type semiconductor layers (410, 430) and electrically connected to the first and second conductivity type semiconductor layers (410, 430) through the first and second electrode branches (411, 431); an insulating part formed on the first and second conductivity type semiconductor layers (410, 430), wherein the insulating part covers upper portions of the first and second electrode branches (411, 2. 431); and at least one first conductive via electrically connected to the first electrode branch and at least one second conductive via electrically connected to the second electrode branch being penetratingly formed through portions of the insulating part in a thicknesswise direction.