Semiconductor structure for emitting light comprising: - a substrate made of a first semi-conductor material having a first type of conductivity, the substrate having a first and a second face (110, 120), - a first electrical contact on the first face, - at least one second semiconductor material, having a second type of conductivity forming a first portion of the semiconductor structure and in electrical contact with a second portion of the semiconductor structure having the first conductivity so as to form a junction, - a second electrical contact electrically connected with the second semiconductor material, - a polarization means suitable for polarizing at least one portion (1a, 1b) of the semiconductor structure among the first and the second portion (1a, 1b), the polarization means being laid out so that its polarization leads to an inversion of the type of carriers in said portion (1a, 1b) by injection into said portion (1a, 1b) of majority carriers of the other portion (1b, 1a), so as to move the junction in said portion (1a, 1b), the semiconductor structure further comprising: - a plurality of micro- or nano-structures each having a first and a second end (210, 220), each of the first ends being connected to the second face, each micro- or nano- structure comprising at least one portion made from the second semiconductor material so as to form the first portion, or each micro- or nano- structure having the first type of conductivity, the second end contacting the second semiconductor material so as to form the junction, the semiconductor structure being characterized in that a portion of said micro- or nano-structure and the second face formed the portion, from the first and the second portion (1a, 1b), for which the polarization means is arranged for leading, by its polarization, to an inversion of the type of carriers in said portion (1a, 1b) by injection into said portion (1a, 1b) of majority carriers of the other portion (1b, 1a). - a substrate made of a first semi-conductor material having a first type of conductivity, the substrate having a first and a second face (110, 120), - a first electrical contact on the first face, - at least one second semiconductor material, having a second type of conductivity forming a first portion of the semiconductor structure and in electrical contact with a second portion of the semiconductor structure having the first conductivity so as to form a junction, - a second electrical contact electrically connected with the second semiconductor material, - a polarization means suitable for polarizing at least one portion (1a, 1b) of the semiconductor structure among the first and the second portion (1a, 1b), the polarization means being laid out so that its polarization leads to an inversion of the type of carriers in said portion (1a, 1b) by injection into said portion (1a, 1b) of majority carriers of the other portion (1b, 1a), so as to move the junction in said portion (1a, 1b), - a plurality of micro- or nano-structures each having a first and a second end (210, 220), each of the first ends being connected to the second face, each micro- or nano- structure comprising at least one portion made from the second semiconductor material so as to form the first portion, or each micro- or nano- structure having the first type of conductivity, the second end contacting the second semiconductor material so as to form the junction,