A plating method for manufacturing of electrical contacts on a solar module, the method comprising, in this order, the steps of (i) providing an array of solar cells mounted onto a support substrate, the solar cells separated from each other by a horizontal spacing, having an exposed surface comprising at least one contact area on each solar cell, and wherein the solar cells are silicon-based back-contact cells, (ii) depositing a plating resist onto the exposed surface of the array of solar cells and the horizontal spacing between the solar cells, (iii) forming at least first and second openings in the plating resist, wherein the second openings are formed for wiring between at least two solar cells by exposing at least a portion of said contact area on each solar cell and wherein the first openings are formed in the horizontal spacing between the solar cells for wiring reinforcement pillars, (iv) forming a conductive seed layer on top of the plating resist and the openings formed in step (iii), wherein the conductive seed layer is deposited onto at least a portion of the contact area exposed by the second openings, onto the outer surface of the patterned plating resist layer which are exposed by the first openings, (v) forming a metal or metal alloy layer on top of the conductive seed layer, and (vi) etching back those portions of the metal or metal alloy layer and the conductive seed layer sufficient to remove both the metal or metal alloy layer and the conductive seed layer from the plating resist leaving a metal or metal alloy layer in the openings formed in step (iii) and thereby forming a wiring between solar cells and wiring reinforcement pillars. (i) providing an array of solar cells mounted onto a support substrate, the solar cells separated from each other by a horizontal spacing, having an exposed surface comprising at least one contact area on each solar cell, and wherein the solar cells are silicon-based back-contact cells, (ii) depositing a plating resist onto the exposed surface of the array of solar cells and the horizontal spacing between the solar cells, (iii) forming at least first and second openings in the plating resist, wherein the second openings are formed for wiring between at least two solar cells by exposing at least a portion of said contact area on each solar cell and wherein the first openings are formed in the horizontal spacing between the solar cells for wiring reinforcement pillars, (iv) forming a conductive seed layer on top of the plating resist and the openings formed in step (iii), wherein the conductive seed layer is deposited onto at least a portion of the contact area exposed by the second openings, onto the outer surface of the patterned plating resist layer which are exposed by the first openings, (v) forming a metal or metal alloy layer on top of the conductive seed layer, and (vi) etching back those portions of the metal or metal alloy layer and the conductive seed layer sufficient to remove both the metal or metal alloy layer and the conductive seed layer from the plating resist leaving a metal or metal alloy layer in the openings formed in step (iii) and thereby forming a wiring between solar cells and wiring reinforcement pillars.