A manufacturing method of a liquid crystal phase shifter, which is used for manufacturing the liquid crystal phase shifter, wherein the manufacturing method includes the following steps: step S0: providing a liquid crystal layer; step S1: providing a first substrate being a printed circuit board, wherein the first substrate is provided with a first metal film layer, the first metal film layer is provided with a first alignment mark, the first substrate is provided with a first through hole, and a position of the first alignment mark corresponds to a position of the first through hole; step S2: providing a second substrate being a PCB, wherein the second substrate is provided with a second metal film layer, the second metal film layer is provided with a second alignment mark, the second substrate is provided with a second through hole, and a position of the second alignment mark corresponds to a position of the second through hole; and step S3: oppositely bonding the first substrate and the second substrate respectively via the first through hole and the second through hole by using the first alignment mark and the second alignment mark and bonding the aligned first substrate and second substrate, wherein the liquid crystal layer is located between the first substrate and the second substrate and the meal film layers (21, 22) in the first and second substrates (11, 12) are located respectively on the sides of the substrates (11, 12) that face each other; and wherein the first alignment mark is a metal alignment mark, and the first alignment mark is obtained by performing exposure and etching on the first metal film layer; the second alignment mark is a metal alignment mark, and the second alignment mark is obtained by performing exposure and etching on the second metal film layer; a first carrier layer with high light transmittance is disposed between the first metal film layer and the first substrate, and the first carrier layer is used as a supporting layer of the first alignment mark; and a second carrier with high light transmittance is disposed between the second metal film layer and the second substrate, and the second carrier layer is used as a supporting layer of the second alignment mark. step S0: providing a liquid crystal layer; step S1: providing a first substrate being a printed circuit board, wherein the first substrate is provided with a first metal film layer, the first metal film layer is provided with a first alignment mark, the first substrate is provided with a first through hole, and a position of the first alignment mark corresponds to a position of the first through hole; step S2: providing a second substrate being a PCB, wherein the second substrate is provided with a second metal film layer, the second metal film layer is provided with a second alignment mark, the second substrate is provided with a second through hole, and a position of the second alignment mark corresponds to a position of the second through hole; and step S3: oppositely bonding the first substrate and the second substrate respectively via the first through hole and the second through hole by using the first alignment mark and the second alignment mark and bonding the aligned first substrate and second substrate, wherein the liquid crystal layer is located between the first substrate and the second substrate and the meal film layers (21, 22) in the first and second substrates (11, 12) are located respectively on the sides of the substrates (11, 12) that face each other; and wherein the first alignment mark is a metal alignment mark, and the first alignment mark is obtained by performing exposure and etching on the first metal film layer; the second alignment mark is a metal alignment mark, and the second alignment mark is obtained by performing exposure and etching on the second metal film layer; a first carrier layer with high light transmittance is disposed between the first metal film layer and the first substrate, and the first carrier layer is used as a supporting layer of the first alignment mark; and a second carrier with high light transmittance is disposed between the second metal film layer and the second substrate, and the second carrier layer is used as a supporting layer of the second alignment mark.