A light emitting device package comprising: a light emitting structure layer including a first conductive semiconductor layer, an active layer partially disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; an insulating layer disposed on lateral surfaces of the active layer and the second conductive semiconductor layer and partially disposed under the second conductive semiconductor layer; an ohmic contact layer disposed under the second conductive semiconductor layer; an electrode disposed under the first conductive semiconductor layer and electrically insulated from the active layer and the second conductive semiconductor layer by the insulating layer; and a support layer disposed under the ohmic contact layer, the insulating layer, and the electrode, wherein the support layer includes a first conductive region electrically connected to the electrode, a second conductive region electrically connected to the second conductive semiconductor layer, and an insulating region disposed between the first and second conductive regions (91, 92) and electrically insulating the first conductive region from the second conductive region, wherein the insulating layer is partially disposed under the second conductive semiconductor layer such that the second conductive semiconductor layer is partially exposed, wherein the insulating layer disposed under the second conductive semiconductor layer directly makes contact with the insulating region, wherein the electrode directly makes contact with the first conductive region, wherein the ohmic contact layer directly makes contact with the second conductive region, wherein a top surface of the support layer, a bottom surface of the insulating layer, a bottom surface of the ohmic contact layer and a bottom surface of the electrode are formed on a same horizontal plane, wherein a width of the first and second conductive region (91, 92) is widened in the direction from a bottom surface of the support layer to the top surface of the support layer facing the insulating layer and the electrode, and wherein a width of the insulating region is narrowed in the direction from the bottom surface of the support layer to the top surface of the support layer. a light emitting structure layer including a first conductive semiconductor layer, an active layer partially disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; an insulating layer disposed on lateral surfaces of the active layer and the second conductive semiconductor layer and partially disposed under the second conductive semiconductor layer; an ohmic contact layer disposed under the second conductive semiconductor layer; an electrode disposed under the first conductive semiconductor layer and electrically insulated from the active layer and the second conductive semiconductor layer by the insulating layer; and a support layer disposed under the ohmic contact layer, the insulating layer, and the electrode, wherein the support layer includes a first conductive region electrically connected to the electrode, a second conductive region electrically connected to the second conductive semiconductor layer, and an insulating region disposed between the first and second conductive regions (91, 92) and electrically insulating the first conductive region from the second conductive region, wherein the insulating layer is partially disposed under the second conductive semiconductor layer such that the second conductive semiconductor layer is partially exposed, wherein the insulating layer disposed under the second conductive semiconductor layer directly makes contact with the insulating region, wherein the electrode directly makes contact with the first conductive region, wherein the ohmic contact layer directly makes contact with the second conductive region, wherein a top surface of the support layer, a bottom surface of the insulating layer, a bottom surface of the ohmic contact layer and a bottom surface of the electrode are formed on a same horizontal plane, wherein a width of the first and second conductive region (91, 92) is widened in the direction from a bottom surface of the support layer to the top surface of the support layer facing the insulating layer and the electrode, and wherein a width of the insulating region is narrowed in the direction from the bottom surface of the support layer to the top surface of the support layer.