A silicon based photo-electric multiplier, comprising: - a substrate of a first conductivity type having 10 18 - 10 20 cm -3 of a doping agent concentration, - a plurality of cells, the cells being arranged above the substrate and each one of the cells comprising: - an epitaxial layer of the first conductivity type formed on the substrate and having 10 14 - 10 18 cm -3 of a varying doping agent concentration, - a first layer of the first conductivity type formed within the epitaxial layer and having 10 15 - 10 17 cm -3 of a doping agent concentration, - a second layer of a second conductivity type formed on the first layer and having 10 18 - 10 20 cm -3 of a doping agent concentration, the first layer and the second layer forming an n-p junction at an interface there between, - a silicon oxide layer formed on the second layer, wherein - the epitaxial layer comprises a spatial gradient in the doping concentration, the doping concentration being decreased from a relatively high value at the boundary between the epitaxial layer and the substrate to a relatively low value at the photosensitive surface of the epitaxial layer in order to create a built-in electrical field of high uniformity within the epitaxial layer, characterized in that a polysilicon resistor is located on the silicon oxide layer and connects the second layer to a voltage distribution bus, and in which separating elements are disposed between neighboring cells, the separating elements being formed as triangular V-grooves being formed by anisotropic etching of the silicon having orientation <100> in fluid etches on the base of KOH. - a substrate of a first conductivity type having 10 18 - 10 20 cm -3 of a doping agent concentration, - a plurality of cells, the cells being arranged above the substrate and each one of the cells comprising: - an epitaxial layer of the first conductivity type formed on the substrate and having 10 14 - 10 18 cm -3 of a varying doping agent concentration, - a first layer of the first conductivity type formed within the epitaxial layer and having 10 15 - 10 17 cm -3 of a doping agent concentration, - a second layer of a second conductivity type formed on the first layer and having 10 18 - 10 20 cm -3 of a doping agent concentration, the first layer and the second layer forming an n-p junction at an interface there between, - a silicon oxide layer formed on the second layer, wherein - the epitaxial layer comprises a spatial gradient in the doping concentration, the doping concentration being decreased from a relatively high value at the boundary between the epitaxial layer and the substrate to a relatively low value at the photosensitive surface of the epitaxial layer in order to create a built-in electrical field of high uniformity within the epitaxial layer, - an epitaxial layer of the first conductivity type formed on the substrate and having 10 14 - 10 18 cm -3 of a varying doping agent concentration, - a first layer of the first conductivity type formed within the epitaxial layer and having 10 15 - 10 17 cm -3 of a doping agent concentration, - a second layer of a second conductivity type formed on the first layer and having 10 18 - 10 20 cm -3 of a doping agent concentration, the first layer and the second layer forming an n-p junction at an interface there between, - a silicon oxide layer formed on the second layer, wherein - the epitaxial layer comprises a spatial gradient in the doping concentration, the doping concentration being decreased from a relatively high value at the boundary between the epitaxial layer and the substrate to a relatively low value at the photosensitive surface of the epitaxial layer in order to create a built-in electrical field of high uniformity within the epitaxial layer, - the epitaxial layer comprises a spatial gradient in the doping concentration, the doping concentration being decreased from a relatively high value at the boundary between the epitaxial layer and the substrate to a relatively low value at the photosensitive surface of the epitaxial layer in order to create a built-in electrical field of high uniformity within the epitaxial layer,