Method of fabricating a radiation emitter comprising the steps of fabricating a layer stack that comprises a first reflector, at least one intermediate layer, an active region, and a second reflector; locally oxidizing the at least one intermediate layer and thereby forming at least one unoxidized aperture in the at least one intermediate layer; and locally removing the layer stack, and thereby forming a mesa, wherein the mesa comprises the first reflector, the at least one unoxidized aperture, the active region, and the second reflector; wherein before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching blind holes inside the layer stack, wherein the blind holes vertically extend at least to the intermediate layer and expose the intermediate layer; wherein said step of locally oxidizing sections of the at least one intermediate layer via the blind holes forms at least a first unoxidised aperture and a second unoxidised aperture inside the at least one intermediate layer; and etching a trench inside the layer stack, said trench defining at least a first portion of the mesa and at least a second portion of the mesa, wherein the trench severs the intermediate layer and separates the apertures such that the at least one first aperture is located in the first portion of the mesa and the at least one second aperture is located in the second portion of the mesa; and fabricating an individual electrical contact (61A, 61B) for each of the portions (M1, M2). fabricating a layer stack that comprises a first reflector, at least one intermediate layer, an active region, and a second reflector; locally oxidizing the at least one intermediate layer and thereby forming at least one unoxidized aperture in the at least one intermediate layer; and locally removing the layer stack, and thereby forming a mesa, wherein the mesa comprises the first reflector, the at least one unoxidized aperture, the active region, and the second reflector; wherein before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching blind holes inside the layer stack, wherein the blind holes vertically extend at least to the intermediate layer and expose the intermediate layer; wherein said step of locally oxidizing sections of the at least one intermediate layer via the blind holes forms at least a first unoxidised aperture and a second unoxidised aperture inside the at least one intermediate layer; and etching a trench inside the layer stack, said trench defining at least a first portion of the mesa and at least a second portion of the mesa, wherein the trench severs the intermediate layer and separates the apertures such that the at least one first aperture is located in the first portion of the mesa and the at least one second aperture is located in the second portion of the mesa; and fabricating an individual electrical contact (61A, 61B) for each of the portions (M1, M2). before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching blind holes inside the layer stack, wherein the blind holes vertically extend at least to the intermediate layer and expose the intermediate layer; wherein said step of locally oxidizing sections of the at least one intermediate layer via the blind holes forms at least a first unoxidised aperture and a second unoxidised aperture inside the at least one intermediate layer; and etching a trench inside the layer stack, said trench defining at least a first portion of the mesa and at least a second portion of the mesa, wherein the trench severs the intermediate layer and separates the apertures such that the at least one first aperture is located in the first portion of the mesa and the at least one second aperture is located in the second portion of the mesa; and fabricating an individual electrical contact (61A, 61B) for each of the portions (M1, M2).