A method for irradiating a target with a beam of energetic radiation formed by electrically charged particles for writing a desired pattern on said target, comprising the steps of - providing a pattern definition device having a plurality of apertures transparent to said radiation, - illuminating said pattern definition device by means of an illuminating wide beam (lb), which traverses the pattern definition device through said apertures thus forming a patterned beam (pb) consisting of a corresponding plurality of beamlets, - forming said patterned beam into a pattern image (pm) on the location of the target, said pattern image comprising the images of at least part of the plurality of apertures covering a number of pattern pixels (px), i.e. aperture image positions, on the target, wherein during a sequence of exposure intervals, each of the apertures is selectively controlled so as to impart respective dose amounts to the pattern pixels (px), in the following also merely referred to as pixels, onto which the respective aperture is imaged, said dose amounts (y) being selected in accordance with the desired pattern, where each pixel is associated with a nominal dose amount (y) in accordance with the desired pattern, - generating a relative movement between said target and the pattern definition device producing a stepwise movement of said pattern image on the target along a path over a region (r1, Rr) where a beam exposure is to be performed, said path being composed of sections which extend along a scanning direction (sd), said sections corresponding to exposure stripes (s11, s12, s13; s20, s21, s22) covering said region in sequential exposures, wherein the exposure stripes (s11, s12, s13; s20, s21, s22) are mutually overlapping wherein overlapping exposure stripes are located at different transversal offsets as taken along a direction transversal to the scanning direction, such that each area of said region is exposed by at least two different areas of the pattern image at different transversal offsets, - calculating, by an electronic pattern information processing system, for each pixel, a corrected dose amount ( y ') by dividing the value of the nominal dose amount ( y) by a correction factor ( q), characterised in that the same correction factor ( q) is used with pixels written by beamlets located at positions which differ only by said transversal offsets of overlapping stripes, while the correction factor ( q) varies between groups of pixels which differ by an offset which does not correspond to a transversal offset of overlapping stripes. - providing a pattern definition device having a plurality of apertures transparent to said radiation, - illuminating said pattern definition device by means of an illuminating wide beam (lb), which traverses the pattern definition device through said apertures thus forming a patterned beam (pb) consisting of a corresponding plurality of beamlets, - forming said patterned beam into a pattern image (pm) on the location of the target, said pattern image comprising the images of at least part of the plurality of apertures covering a number of pattern pixels (px), i.e. aperture image positions, on the target, wherein during a sequence of exposure intervals, each of the apertures is selectively controlled so as to impart respective dose amounts to the pattern pixels (px), in the following also merely referred to as pixels, onto which the respective aperture is imaged, said dose amounts (y) being selected in accordance with the desired pattern, where each pixel is associated with a nominal dose amount (y) in accordance with the desired pattern, - generating a relative movement between said target and the pattern definition device producing a stepwise movement of said pattern image on the target along a path over a region (r1, Rr) where a beam exposure is to be performed, said path being composed of sections which extend along a scanning direction (sd), said sections corresponding to exposure stripes (s11, s12, s13; s20, s21, s22) covering said region in sequential exposures, wherein the exposure stripes (s11, s12, s13; s20, s21, s22) are mutually overlapping wherein overlapping exposure stripes are located at different transversal offsets as taken along a direction transversal to the scanning direction, such that each area of said region is exposed by at least two different areas of the pattern image at different transversal offsets, - calculating, by an electronic pattern information processing system, for each pixel, a corrected dose amount ( y ') by dividing the value of the nominal dose amount ( y) by a correction factor ( q), characterised in that