A solid-state transducer device, comprising: a conductive carrier substrate; a first terminal; a second terminal, wherein the first and second terminals are positioned to couple to a power supply having an output voltage, and wherein at least a portion of the conductive carrier substrate defines the second terminal; a plurality of SST dies electrically connected in series between the first and second terminals, wherein the plurality of SST dies includes a first SST die adjacent to a second SST die, wherein individual SST dies have a forward junction voltage less than the output voltage, and wherein the individual SST dies comprise a transducer structure having a p-n junction, the transducer structure forming a boundary between a first region and a second region, with the conductive carrier substrate being in the first region; a first contact in the first region and electrically connected to the p-n junction; and a second contact electrically connected to the p-n junction, wherein the second contact is a buried contact projecting through the first contact into the transducer structure beyond the p-n junction, and wherein the second contact is electrically isolated from the first contact; and an interconnect region having an opening between the transducer structures of the adjacent first and second SST dies, wherein the opening exposes a portion of the second contact of the first SST die and a portion of the first contact of the second SST die, and wherein the second contact of the first SST die and the first contact of the second SST die are electrically coupled together in series in the opening. a conductive carrier substrate; a first terminal; a second terminal, wherein the first and second terminals are positioned to couple to a power supply having an output voltage, and wherein at least a portion of the conductive carrier substrate defines the second terminal; a plurality of SST dies electrically connected in series between the first and second terminals, wherein the plurality of SST dies includes a first SST die adjacent to a second SST die, wherein individual SST dies have a forward junction voltage less than the output voltage, and wherein the individual SST dies comprise a transducer structure having a p-n junction, the transducer structure forming a boundary between a first region and a second region, with the conductive carrier substrate being in the first region; a first contact in the first region and electrically connected to the p-n junction; and a second contact electrically connected to the p-n junction, wherein the second contact is a buried contact projecting through the first contact into the transducer structure beyond the p-n junction, and wherein the second contact is electrically isolated from the first contact; and a transducer structure having a p-n junction, the transducer structure forming a boundary between a first region and a second region, with the conductive carrier substrate being in the first region; a first contact in the first region and electrically connected to the p-n junction; and a second contact electrically connected to the p-n junction, wherein the second contact is a buried contact projecting through the first contact into the transducer structure beyond the p-n junction, and wherein the second contact is electrically isolated from the first contact; and an interconnect region having an opening between the transducer structures of the adjacent first and second SST dies, wherein the opening exposes a portion of the second contact of the first SST die and a portion of the first contact of the second SST die, and wherein the second contact of the first SST die and the first contact of the second SST die are electrically coupled together in series in the opening.