A Non-Volatile Resistive memory comprising: a first array of bitcells, first I/O, (714, 716); and a second array of bitcells, a second I/O (714, 716), the Non-Volatile Resistive memory being characterized by: the first I/O having a first voltage reference cell having a first voltage reference cell voltage output, a first voltage reference cell switchable device from the first voltage reference cell voltage output to a first I/O voltage reference line, and a first sense amplifier coupled to the first I/O voltage reference line, wherein the first voltage reference cell is configured to generate at the first reference cell voltage output a first reference voltage approximately midpoint between a given high read voltage and a given low read voltage; the second I/O (714, 716) having a second voltage reference cell having a second voltage reference cell voltage output, a second voltage reference cell switchable device from the second voltage reference cell voltage output to a second I/O voltage reference line, and a second sense amplifier coupled to the second I/O voltage reference line, wherein the second voltage reference cell is configured to generate at the second voltage reference cell output a second reference voltage approximately midpoint between the given high read voltage and the given low read voltage; and a voltage reference line coupling link between the first I/O voltage reference line and the second I/O voltage reference line, said voltage reference line coupling link adapted to selectively isolate at least one of the reference cells based on a result of identifying an acceptability of a voltage at the reference voltage output of the reference cell of at least one of the I/Os (714, 716), relative to a given range of acceptability. a first array of bitcells, first I/O, (714, 716); and a second array of bitcells, a second I/O (714, 716), the Non-Volatile Resistive memory being characterized by: the first I/O having a first voltage reference cell having a first voltage reference cell voltage output, a first voltage reference cell switchable device from the first voltage reference cell voltage output to a first I/O voltage reference line, and a first sense amplifier coupled to the first I/O voltage reference line, wherein the first voltage reference cell is configured to generate at the first reference cell voltage output a first reference voltage approximately midpoint between a given high read voltage and a given low read voltage; the second I/O (714, 716) having a second voltage reference cell having a second voltage reference cell voltage output, a second voltage reference cell switchable device from the second voltage reference cell voltage output to a second I/O voltage reference line, and a second sense amplifier coupled to the second I/O voltage reference line, wherein the second voltage reference cell is configured to generate at the second voltage reference cell output a second reference voltage approximately midpoint between the given high read voltage and the given low read voltage; and a voltage reference line coupling link between the first I/O voltage reference line and the second I/O voltage reference line, said voltage reference line coupling link adapted to selectively isolate at least one of the reference cells based on a result of identifying an acceptability of a voltage at the reference voltage output of the reference cell of at least one of the I/Os (714, 716), relative to a given range of acceptability. the first I/O having a first voltage reference cell having a first voltage reference cell voltage output, a first voltage reference cell switchable device from the first voltage reference cell voltage output to a first I/O voltage reference line, and a first sense amplifier coupled to the first I/O voltage reference line, wherein the first voltage reference cell is configured to generate at the first reference cell voltage output a first reference voltage approximately midpoint between a given high read voltage and a given low read voltage; the second I/O (714, 716) having a second voltage reference cell having a second voltage reference cell voltage output, a second voltage reference cell switchable device from the second voltage reference cell voltage output to a second I/O voltage reference line, and a second sense amplifier coupled to the second I/O voltage reference line, wherein the second voltage reference cell is configured to generate at the second voltage reference cell output a second reference voltage approximately midpoint between the given high read voltage and the given low read voltage; and a voltage reference line coupling link between the first I/O voltage reference line and the second I/O voltage reference line, said voltage reference line coupling link adapted to selectively isolate at least one of the reference cells based on a result of identifying an acceptability of a voltage at the reference voltage output of the reference cell of at least one of the I/Os (714, 716), relative to a given range of acceptability.