A solar cell (1, 1A, 1B, 1C), comprising: a semiconductor substrate having a first conductivity type, containing crystalline semiconductor material and having a light-receiving surface and a rear surface; a first amorphous semiconductor layer having the first conductivity type; and a second amorphous semiconductor layer having a second conductivity type, the first amorphous semiconductor layer and the second amorphous semiconductor layer being alternately formed on the rear surface of the semiconductor substrate in an arrangement direction, wherein: the rear surface of the semiconductor substrate includes a trench having a bottom surface and side surfaces, the first amorphous semiconductor layer is formed on the rear surface of the semiconductor substrate in which the trench is not formed, the second amorphous semiconductor layer is continuously formed on the bottom surface of the trench and on the side surfaces of the trench in the arrangement direction, junctions between the second amorphous semiconductor layer formed on the side surfaces of the trench and the semiconductor substrate are hetero-junctions; a junction between the second amorphous semiconductor layer formed on the bottom surface of the trench and the semiconductor substrate is a hetero-junction, and the side surfaces of the trench are continuous with the bottom surface of the trench; characterized in that: the first amorphous semiconductor layer is formed directly, or via only an i-type semiconductor layer, on the entire rear surface of the semiconductor substrate in which the trench is not formed; an insulation layer of aluminum nitride, silicon nitride, or silicon oxide is formed to cover an end portion of the first amorphous semiconductor layer; and the second amorphous semiconductor layer is formed on the insulation layer to cover the end portion of the first amorphous semiconductor layer. a semiconductor substrate having a first conductivity type, containing crystalline semiconductor material and having a light-receiving surface and a rear surface; a first amorphous semiconductor layer having the first conductivity type; and a second amorphous semiconductor layer having a second conductivity type, the first amorphous semiconductor layer and the second amorphous semiconductor layer being alternately formed on the rear surface of the semiconductor substrate in an arrangement direction, wherein: the rear surface of the semiconductor substrate includes a trench having a bottom surface and side surfaces, the first amorphous semiconductor layer is formed on the rear surface of the semiconductor substrate in which the trench is not formed, the second amorphous semiconductor layer is continuously formed on the bottom surface of the trench and on the side surfaces of the trench in the arrangement direction, junctions between the second amorphous semiconductor layer formed on the side surfaces of the trench and the semiconductor substrate are hetero-junctions; a junction between the second amorphous semiconductor layer formed on the bottom surface of the trench and the semiconductor substrate is a hetero-junction, and the side surfaces of the trench are continuous with the bottom surface of the trench; the rear surface of the semiconductor substrate includes a trench having a bottom surface and side surfaces, the first amorphous semiconductor layer is formed on the rear surface of the semiconductor substrate in which the trench is not formed, the second amorphous semiconductor layer is continuously formed on the bottom surface of the trench and on the side surfaces of the trench in the arrangement direction, junctions between the second amorphous semiconductor layer formed on the side surfaces of the trench and the semiconductor substrate are hetero-junctions; a junction between the second amorphous semiconductor layer formed on the bottom surface of the trench and the semiconductor substrate is a hetero-junction, and the side surfaces of the trench are continuous with the bottom surface of the trench; characterized in that: the first amorphous semiconductor layer is formed directly, or via only an i-type semiconductor layer, on the entire rear surface of the semiconductor substrate in which the trench is not formed; an insulation layer of aluminum nitride, silicon nitride, or silicon oxide is formed to cover an end portion of the first amorphous semiconductor layer; and the second amorphous semiconductor layer is formed on the insulation layer to cover the end portion of the first amorphous semiconductor layer. the first amorphous semiconductor layer is formed directly, or via only an i-type semiconductor layer, on the entire rear surface of the semiconductor substrate in which the trench is not formed; an insulation layer of aluminum nitride, silicon nitride, or silicon oxide is formed to cover an end portion of the first amorphous semiconductor layer; and the second amorphous semiconductor layer is formed on the insulation layer to cover the end portion of the first amorphous semiconductor layer.