A method of forming a semiconductor structure, comprising: forming a plurality of sets of conductive material and insulating material, wherein odd numbered sets (315a, 315c, 315e) of the plurality of sets are located between even numbered sets (315b, 315d, 315f) of the plurality of sets; forming a first mask over a topmost set of the plurality of sets; removing a portion of the first mask to expose a portion of a major surface of the topmost set of the plurality of sets; removing the exposed portion of the two topmost sets (315a, 315b) of the plurality of sets prior to exposing another portion of the major surface of the topmost set to expose a portion of the plurality of sets under the two topmost sets (315a, 315b) of the plurality of sets; removing another portion of the first mask to expose another portion of the major surface of the topmost set, the another portion of the major surface of the topmost set adjacent to the removed portion of the major surface of the topmost set of the plurality of sets; removing the exposed another portion of the major surface of the two topmost sets (315a, 315b) of the plurality of sets and removing exposed portions of two sets of the plurality of sets under the two topmost sets (315a, 315b) of the plurality of sets; repeatedly removing further portions of the first mask and removing further exposed portions of the two topmost sets (315a, 315b) of the plurality of sets until a first number of contact regions are formed, each contact region of the first number of contact regions offset from the other contact regions of the first number of contact regions, the odd numbered sets (315a, 315c, 315e) of the plurality of sets comprising the contact regions of the first number of contact regions; forming a second mask over a first region of the plurality of sets; and removing material from the plurality of sets in a second, exposed region of the plurality of sets laterally adjacent the first region to form a second number of contact regions offset from the contact regions of the first number of contact regions, the even numbered sets (315b, 315d, 315f) of the plurality of sets comprising the contact regions of the second number of contact regions, wherein the even numbered sets (315b, 315d, 315f) of the plurality of sets are offset from the odd numbered sets (315a, 315c, 315e) of the plurality of sets, wherein odd numbered sets (315a, 315c, 315e) of the plurality of sets are located between even numbered sets (315b, 315d, 315f) of the plurality of sets and separated from other odd numbered sets (315a, 315c, 315e) by an even numbered set (315b, 315d, 315f). forming a plurality of sets of conductive material and insulating material, wherein odd numbered sets (315a, 315c, 315e) of the plurality of sets are located between even numbered sets (315b, 315d, 315f) of the plurality of sets; forming a first mask over a topmost set of the plurality of sets; removing a portion of the first mask to expose a portion of a major surface of the topmost set of the plurality of sets; removing the exposed portion of the two topmost sets (315a, 315b) of the plurality of sets prior to exposing another portion of the major surface of the topmost set to expose a portion of the plurality of sets under the two topmost sets (315a, 315b) of the plurality of sets; removing another portion of the first mask to expose another portion of the major surface of the topmost set, the another portion of the major surface of the topmost set adjacent to the removed portion of the major surface of the topmost set of the plurality of sets; removing the exposed another portion of the major surface of the two topmost sets (315a, 315b) of the plurality of sets and removing exposed portions of two sets of the plurality of sets under the two topmost sets (315a, 315b) of the plurality of sets; repeatedly removing further portions of the first mask and removing further exposed portions of the two topmost sets (315a, 315b) of the plurality of sets until a first number of contact regions are formed, each contact region of the first number of contact regions offset from the other contact regions of the first number of contact regions, the odd numbered sets (315a, 315c, 315e) of the plurality of sets comprising the contact regions of the first number of contact regions; forming a second mask over a first region of the plurality of sets; and removing material from the plurality of sets in a second, exposed region of the plurality of sets laterally adjacent the first region to form a second number of contact regions offset from the contact regions of the first number of contact regions, the even numbered sets (315b, 315d, 315f) of the plurality of sets comprising the contact regions of the second number of contact regions, wherein the even numbered sets (315b, 315d, 315f) of the plurality of sets are offset from the odd numbered sets (315a, 315c, 315e) of the plurality of sets, wherein odd numbered sets (315a, 315c, 315e) of the plurality of sets are located between even numbered sets (315b, 315d, 315f) of the plurality of sets and separated from other odd numbered sets (315a, 315c, 315e) by an even numbered set (315b, 315d, 315f).