A method for treating the surface of a semiconductor wafer to enhance handling during processing, the method comprising the steps of: providing a first wafer and a second wafer; applying a release layer to a surface of the first wafer to form a release layer coated wafer; wherein the release layer is one selected from the group of a silsesquioxane-based resin and a thermoplastic resin; the release layer capable of withstanding exposure up to about 180°C without the occurrence of substantial cross-linking; applying an adhesive to a surface of the second wafer or to the release layer coated wafer to form an adhesive coated wafer; wherein the adhesive is not miscible with the release layer; the adhesive being a polysiloxane-based composition that includes a vinyl-functionalized oligomeric resin, a Si-H functional oligomeric resin, a catalyst capable of facilitating a hydrosilylation reaction and optionally, an inhibitor that can interact with the catalyst in order to delay the initiation of the hydrosilylation reaction; optionally prebaking the adhesive coated wafer at a temperature between about 90 to about 110°C; forming a bonded wafer system by bonding the adhesive coated wafer to the other wafer, the other wafer being either the second wafer or the release layer coated wafer; performing at least one wafer processing operation on the first wafer to form a processed wafer system; debonding the processed wafer system by initiating separation between the release layer and the adhesive to obtain a processed first wafer; and cleaning the surface of the processed first wafer with an organic solvent; wherein the organic solvent dissolves the release layer. providing a first wafer and a second wafer; applying a release layer to a surface of the first wafer to form a release layer coated wafer; wherein the release layer is one selected from the group of a silsesquioxane-based resin and a thermoplastic resin; the release layer capable of withstanding exposure up to about 180°C without the occurrence of substantial cross-linking; applying an adhesive to a surface of the second wafer or to the release layer coated wafer to form an adhesive coated wafer; wherein the adhesive is not miscible with the release layer; the adhesive being a polysiloxane-based composition that includes a vinyl-functionalized oligomeric resin, a Si-H functional oligomeric resin, a catalyst capable of facilitating a hydrosilylation reaction and optionally, an inhibitor that can interact with the catalyst in order to delay the initiation of the hydrosilylation reaction; optionally prebaking the adhesive coated wafer at a temperature between about 90 to about 110°C; forming a bonded wafer system by bonding the adhesive coated wafer to the other wafer, the other wafer being either the second wafer or the release layer coated wafer; performing at least one wafer processing operation on the first wafer to form a processed wafer system; debonding the processed wafer system by initiating separation between the release layer and the adhesive to obtain a processed first wafer; and cleaning the surface of the processed first wafer with an organic solvent; wherein the organic solvent dissolves the release layer.