A detector device assisted by majority current for detecting an electromagnetic radiation comprising: a semiconductor layer on which an electromagnetic radiation can impinge for generating therein pairs of majority and minority carriers and which is doped with a dopant of a first conductivity type; and at least a first and a second pixel, each comprising: at least one control region (100, 115) formed in the semiconductor layer, being doped with a dopant of the first conductivity type; and at least one detection region (101, 116) formed in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction and collecting generated minority carriers; wherein the detector device further comprises: a first source configured to generate a first electrical field for generating a plurality of first majority carrier currents in the semiconductor layer between the at least one control region (100, 115) of the first pixel and the at least one control region (100, 115) of the second pixel, the plurality of first majority carrier currents being associated with the respective first electrical field; wherein the minority carriers are distributed between the detection regions (101, 116) of the first and second pixel under the influence of the first electrical field respectively associated with the plurality of first majority carrier currents; and control circuitry arranged for controlling the first source such that at least one of said plurality of first majority carrier currents is controlled individually; and wherein one or more portions of the associated volume of the first pixel is shared with one or more neighbouring pixels, thereby creating overlapping virtual pixel zones (200, 201, 202, 203) between the first pixel and the one or more neighbouring pixels. a semiconductor layer on which an electromagnetic radiation can impinge for generating therein pairs of majority and minority carriers and which is doped with a dopant of a first conductivity type; and at least a first and a second pixel, each comprising: at least one control region (100, 115) formed in the semiconductor layer, being doped with a dopant of the first conductivity type; and at least one detection region (101, 116) formed in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction and collecting generated minority carriers; at least one control region (100, 115) formed in the semiconductor layer, being doped with a dopant of the first conductivity type; and at least one detection region (101, 116) formed in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction and collecting generated minority carriers; wherein the detector device further comprises: a first source configured to generate a first electrical field for generating a plurality of first majority carrier currents in the semiconductor layer between the at least one control region (100, 115) of the first pixel and the at least one control region (100, 115) of the second pixel, the plurality of first majority carrier currents being associated with the respective first electrical field; wherein the minority carriers are distributed between the detection regions (101, 116) of the first and second pixel under the influence of the first electrical field respectively associated with the plurality of first majority carrier currents; and control circuitry arranged for controlling the first source such that at least one of said plurality of first majority carrier currents is controlled individually; and a first source configured to generate a first electrical field for generating a plurality of first majority carrier currents in the semiconductor layer between the at least one control region (100, 115) of the first pixel and the at least one control region (100, 115) of the second pixel, the plurality of first majority carrier currents being associated with the respective first electrical field; wherein the minority carriers are distributed between the detection regions (101, 116) of the first and second pixel under the influence of the first electrical field respectively associated with the plurality of first majority carrier currents; and control circuitry arranged for controlling the first source such that at least one of said plurality of first majority carrier currents is controlled individually; and wherein one or more portions of the associated volume of the first pixel is shared with one or more neighbouring pixels, thereby creating overlapping virtual pixel zones (200, 201, 202, 203) between the first pixel and the one or more neighbouring pixels.