Image sensor (100, 800, 850, 1100), comprising a substrate (102, 400, 500), a plurality of pixels (101, 401, 501, 601, 701, 801, 851) arranged on a first area (102a, 802, 852) of the substrate, and a control unit operatively connected to the plurality of pixels and adapted to selectively bias said pixels and read them out, the image sensor being characterized in that the control unit comprises: - a first biasing circuit (103a, 803a, 853a) for providing a first biasing voltage (V DD); - a second biasing circuit (103b, 803b, 853b) for providing a second biasing voltage (Vss), the second biasing voltage (Vss) being substantially symmetrical to the first biasing voltage (V DD) with respect to a voltage reference such that they have opposite signs with respect to said voltage reference and the magnitude of one differs from the magnitude of the other in less than a 25%, 20%, 15%, 10%, 8%, 5%, 3% or even 1%; and - a readout circuit (104, 804, 854) for reading out the photo-signal generated by the light impinging on the pixels, the readout circuit (104, 804, 854) being a non-local readout circuit arranged outside the first area (102a, 802, 852) of the substrate (102, 400, 500); wherein the first biasing circuit (103a, 803a, 853a) and the second biasing circuit (103b, 803b, 853b) comprise, respectively, first selection means (105a, 805a) and second selection means (105b, 805b) to selectively bias one or more pixels of said plurality that are to be read out at a given time, the first selection means and the second selection means being arranged outside the first area (102a, 802, 852) of the substrate (102, 400, 500); and in that each pixel (101, 401, 501, 601, 701, 801, 851) of the plurality of pixels comprises: - a photo-active element (106, 402, 502, 809) comprising a photosensitizing layer (201, 405, 504) associated to a transport layer (202, 406, 505), the transport layer including at least one layer of a two-dimensional material; - a non photo-active reference element (107, 403, 503, 810) disposed proximate to the photo-active active element (106, 402, 502, 809), the non photo-active reference element (107, 403, 503, 810) having a dark conductance that substantially matches the dark conductance of the photo-active element (106, 402, 502, 809); - a first contact (108a, 308a, 410a, 508a, 811a, 861a) circuitally connected to the first biasing circuit (103a, 803a, 853a); - a second contact (108b, 308b, 410b, 508b, 811b, 861b) circuitally connected to the second biasing circuit (103b, 803b, 853b); and - an output contact (109, 309, 409, 509, 812, 862) circuitally connected to the readout circuit (104, 804, 854); wherein the photo-active element (106, 402, 502, 809) is circuitally connected between the first contact (108a, 308a, 410a, 508a, 811a, 861a) and the output contact (109, 309, 409, 509, 812, 862), and the non-photoactive reference element (107, 403, 503, 810) is circuitally connected between the output contact (109, 309, 409, 509, 812, 862) and the second contact (108b, 308b, 410b, 508b, 811b, 861b). - a first biasing circuit (103a, 803a, 853a) for providing a first biasing voltage (V DD); - a second biasing circuit (103b, 803b, 853b) for providing a second biasing voltage (Vss), the second biasing voltage (Vss) being substantially symmetrical to the first biasing voltage (V DD) with respect to a voltage reference such that they have opposite signs with respect to said voltage reference and the magnitude of one differs from the magnitude of the other in less than a 25%, 20%, 15%, 10%, 8%, 5%, 3% or even 1%; and - a readout circuit (104, 804, 854) for reading out the photo-signal generated by the light impinging on the pixels, the readout circuit (104, 804, 854) being a non-local readout circuit arranged outside the first area (102a, 802, 852) of the substrate (102, 400, 500); - a photo-active element (106, 402, 502, 809) comprising a photosensitizing layer (201, 405, 504) associated to a transport layer (202, 406, 505), the transport layer including at least one layer of a two-dimensional material; - a non photo-active reference element (107, 403, 503, 810) disposed proximate to the photo-active active element (106, 402, 502, 809), the non photo-active reference element (107, 403, 503, 810) having a dark conductance that substantially matches the dark conductance of the photo-active element (106, 402, 502, 809); - a first contact (108a, 308a, 410a, 508a, 811a, 861a) circuitally connected to the first biasing circuit (103a, 803a, 853a); - a second contact (108b, 308b, 410b, 508b, 811b, 861b) circuitally connected to the second biasing circuit (103b, 803b, 853b); and - an output contact (109, 309, 409, 509, 812, 862) circuitally connected to the readout circuit (104, 804, 854);