A memory having first and second digit lines and a sense amplifier coupled to said first and second digit lines, each said digit line coupled to a respective memory cell (150, 116), said memory comprising: a pair of isolation transistors (112, 114), wherein said sense amplifier is coupled to said first digit line through one of said isolation transistors and to said second digit line through the other of said isolation transistors; wherein a first connection of the sense amplifier is connected to a terminal of one of said isolation transistors via a first node and a second connection of the sense amplifier is connected to a terminal of the other one of said isolation transistors via a second node; a voltage coupling/decoupling device having an output coupled to said second node, said voltage coupling/decoupling device configured to capacitively couple a first voltage onto or capacitively decouple a second voltage from said second node, wherein said first voltage is a fraction of a first drive voltage signal, and said second voltage is a fraction of a second drive voltage signal, wherein said voltage coupling/decoupling device comprises: a voltage driver having an output, wherein said voltage driver generates said first and second drive voltage signals from said output, and wherein said first and second drive voltages are variable; a capacitor having a first connection terminal and a second connection terminal, said first connection terminal coupled to said voltage driver output, and said second connection coupled to said second node; and; characterized in that, while the isolation transistors are turned off to isolate the first and second digit lines from the first and second nodes and the sense amplifier, said coupling/decoupling device is configured to capacitively decouple said second voltage from said second node after said memory cell connected to said first digit line is accessed by said sense amplifier and before said sense amplifier is fired to restore electrical charge in said memory cell connected to said first digit line. a pair of isolation transistors (112, 114), wherein said sense amplifier is coupled to said first digit line through one of said isolation transistors and to said second digit line through the other of said isolation transistors; wherein a first connection of the sense amplifier is connected to a terminal of one of said isolation transistors via a first node and a second connection of the sense amplifier is connected to a terminal of the other one of said isolation transistors via a second node; a voltage coupling/decoupling device having an output coupled to said second node, said voltage coupling/decoupling device configured to capacitively couple a first voltage onto or capacitively decouple a second voltage from said second node, wherein said first voltage is a fraction of a first drive voltage signal, and said second voltage is a fraction of a second drive voltage signal, wherein said voltage coupling/decoupling device comprises: a voltage driver having an output, wherein said voltage driver generates said first and second drive voltage signals from said output, and wherein said first and second drive voltages are variable; a capacitor having a first connection terminal and a second connection terminal, said first connection terminal coupled to said voltage driver output, and said second connection coupled to said second node; and; characterized in that, while the isolation transistors are turned off to isolate the first and second digit lines from the first and second nodes and the sense amplifier, said coupling/decoupling device is configured to capacitively decouple said second voltage from said second node after said memory cell connected to said first digit line is accessed by said sense amplifier and before said sense amplifier is fired to restore electrical charge in said memory cell connected to said first digit line. a voltage driver having an output, wherein said voltage driver generates said first and second drive voltage signals from said output, and wherein said first and second drive voltages are variable; a capacitor having a first connection terminal and a second connection terminal, said first connection terminal coupled to said voltage driver output, and said second connection coupled to said second node; and; characterized in that, while the isolation transistors are turned off to isolate the first and second digit lines from the first and second nodes and the sense amplifier, said coupling/decoupling device is configured to capacitively decouple said second voltage from said second node after said memory cell connected to said first digit line is accessed by said sense amplifier and before said sense amplifier is fired to restore electrical charge in said memory cell connected to said first digit line.