A method of manufacturing an electronic device comprising a first terminal, a second terminal, a semiconductor channel connecting the first and second terminals and through which electrical current may flow between the first and second terminals, a gate terminal to which a potential may be applied to control a conductivity of the semiconductor channel, and a gate dielectric separating the gate terminal and the channel, the method comprising the steps of: a) providing at least a substrate and said first and second terminals (21, 22) supported, either directly or indirectly, by the substrate, the first and second terminals being separated by a gap, and the first and second terminals and the gap being located over a first region of the substrate and within a perimeter of the first region; b) forming a covering of photoresist material over at least the first region of the substrate so as to cover the first and second terminals, the gap, and any portion or portions of the first region of the substrate not located beneath the gap or the first and second terminals; c) forming a mask on a surface of the covering of photoresist material, the mask covering at least a portion of the gap extending from the first terminal to the second terminal, at least a portion of the first terminal immediately adjacent said portion of the gap, and at least a portion of the second terminal immediately adjacent said portion of the gap; d) exposing the structure resulting from step (c) to electromagnetic radiation from above such that the mask shields a portion of the photoresist covering under the mask from said electromagnetic radiation; e) processing the structure resulting from step (d) to reduce a solubility of the photoresist material exposed to said electromagnetic radiation from above; f) exposing the structure resulting from step (e) to electromagnetic radiation from below, such that the first and second terminals shield parts of the previously unexposed portion of photoresist covering from the electromagnetic radiation from below but another part of the previously unexposed portion of photoresist covering is exposed; g) processing the photoresist material to remove photoresist material that was shielded by the mask from the electromagnetic radiation from above but exposed to electromagnetic radiation from below, to form a window in the covering of photoresist material, but not remove said photoresist material exposed to said electromagnetic radiation from above; h) depositing at least one of: a layer of semiconductor material; a layer of dielectric material; and a layer of conductor material, at least inside said window, to form at least one of: the semiconductor channel, gate dielectric, and gate terminal, respectively; and removing remaining material of the photoresist covering after step (h). a) providing at least a substrate and said first and second terminals (21, 22) supported, either directly or indirectly, by the substrate, the first and second terminals being separated by a gap, and the first and second terminals and the gap being located over a first region of the substrate and within a perimeter of the first region; b) forming a covering of photoresist material over at least the first region of the substrate so as to cover the first and second terminals, the gap, and any portion or portions of the first region of the substrate not located beneath the gap or the first and second terminals; c) forming a mask on a surface of the covering of photoresist material, the mask covering at least a portion of the gap extending from the first terminal to the second terminal, at least a portion of the first terminal immediately adjacent said portion of the gap, and at least a portion of the second terminal immediately adjacent said portion of the gap; d) exposing the structure resulting from step (c) to electromagnetic radiation from above such that the mask shields a portion of the photoresist covering under the mask from said electromagnetic radiation; e) processing the structure resulting from step (d) to reduce a solubility of the photoresist material exposed to said electromagnetic radiation from above; f) exposing the structure resulting from step (e) to electromagnetic radiation from below, such that the first and second terminals shield parts of the previously unexposed portion of photoresist covering from the electromagnetic radiation from below but another part of the previously unexposed portion of photoresist covering is exposed; g) processing the photoresist material to remove photoresist material that was shielded by the mask from the electromagnetic radiation from above but exposed to electromagnetic radiation from below, to form a window in the covering of photoresist material, but not remove said photoresist material exposed to said electromagnetic radiation from above; h) depositing at least one of: a layer of semiconductor material; a layer of dielectric material; and a layer of conductor material, at least inside said window, to form at least one of: the semiconductor channel, gate dielectric, and gate terminal, respectively; and