An optoelectronic apparatus adapted to generate a structured light pattern, the optoelectronic apparatus comprising - an array of vertical cavity surface emitting lasers, VCSELs, provided on a first semiconductor die; - a homogenization optics arrangement adapted to provide, based on light emitted by a plurality of VCSELs of the array of VCSELs, a homogeneous intensity distribution in an intermediate plane; and - a pattern optics arrangement adapted to generate a structured light pattern based on the homogeneous intensity distribution in the intermediate plane; characterized in that the apparatus further comprises - a second array of vertical cavity surface emitting lasers, VCSELs, provided on a second, separate semiconductor die, - a second homogenization optics arrangement adapted to provide, based on light emitted by a plurality of VCSELs of the second array of VCSELs, a second homogeneous intensity distribution in an intermediate plane; - a second pattern optics arrangement adapted to generate a second structured light pattern based on the second homogeneous intensity distribution in the intermediate plane, wherein the homogenization optics arrangement is adapted to provide a first top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the VCSEL array; wherein the second homogenization optics arrangement is adapted to provide a second top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the second VCSEL array, such that the first top-hat intensity distribution and the second top-hat intensity distribution are adjacent to each other and together form a combined top-hat intensity distribution providing a homogeneous intensity distribution in the intermediate plane. - an array of vertical cavity surface emitting lasers, VCSELs, provided on a first semiconductor die; - a homogenization optics arrangement adapted to provide, based on light emitted by a plurality of VCSELs of the array of VCSELs, a homogeneous intensity distribution in an intermediate plane; and - a pattern optics arrangement adapted to generate a structured light pattern based on the homogeneous intensity distribution in the intermediate plane; characterized in that the apparatus further comprises - a second array of vertical cavity surface emitting lasers, VCSELs, provided on a second, separate semiconductor die, - a second homogenization optics arrangement adapted to provide, based on light emitted by a plurality of VCSELs of the second array of VCSELs, a second homogeneous intensity distribution in an intermediate plane; - a second pattern optics arrangement adapted to generate a second structured light pattern based on the second homogeneous intensity distribution in the intermediate plane, wherein the homogenization optics arrangement is adapted to provide a first top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the VCSEL array; wherein the second homogenization optics arrangement is adapted to provide a second top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the second VCSEL array, such that the first top-hat intensity distribution and the second top-hat intensity distribution are adjacent to each other and together form a combined top-hat intensity distribution providing a homogeneous intensity distribution in the intermediate plane. wherein the homogenization optics arrangement is adapted to provide a first top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the VCSEL array; wherein the second homogenization optics arrangement is adapted to provide a second top-hat intensity distribution in the intermediate plane based on light emitted by a plurality of VCSELs of the second VCSEL array, such that the first top-hat intensity distribution and the second top-hat intensity distribution are adjacent to each other and together form a combined top-hat intensity distribution providing a homogeneous intensity distribution in the intermediate plane.