A diode comprising: an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 μm or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the buffer layer, and being in contact with the buffer layer; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type, wherein a carrier concentration in the first semiconductor layer is lower than a carrier concentration in the buffer layer, the carrier concentration in the buffer layer is less than 1×10 15 cm -3, wherein the diode further comprises a third semiconductor layer of the first conductivity type adjacent to the buffer layer, the third semiconductor layer has a carrier concentration of 1×10 15 cm -3 or more, wherein the cathode electrode layer, the third semiconductor layer, the buffer layer, the first semiconductor layer, the second semiconductor layer and the anode electrode layer are arranged over each other in this order along a first direction, the diode being characterised in that a low carrier lifetime control layer at which a carrier lifetime becomes low is buried within the third semiconductor layer, and the low carrier lifetime control layer has a specific resistance distribution exhibiting a high resistance peak independently of an impurity concentration distribution in the third semiconductor layer, the low carrier lifetime control layer consisting of a plurality of portions located in a plane perpendicular to said first direction and spaced apart from each other. an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 μm or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the buffer layer, and being in contact with the buffer layer; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type, wherein a carrier concentration in the first semiconductor layer is lower than a carrier concentration in the buffer layer, the carrier concentration in the buffer layer is less than 1×10 15 cm -3, wherein the diode further comprises a third semiconductor layer of the first conductivity type adjacent to the buffer layer, the third semiconductor layer has a carrier concentration of 1×10 15 cm -3 or more, wherein the cathode electrode layer, the third semiconductor layer, the buffer layer, the first semiconductor layer, the second semiconductor layer and the anode electrode layer are arranged over each other in this order along a first direction, the diode being characterised in that a low carrier lifetime control layer at which a carrier lifetime becomes low is buried within the third semiconductor layer, and the low carrier lifetime control layer has a specific resistance distribution exhibiting a high resistance peak independently of an impurity concentration distribution in the third semiconductor layer, the low carrier lifetime control layer consisting of a plurality of portions located in a plane perpendicular to said first direction and spaced apart from each other.