A light emitting device comprising: a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the light emitting structure layer; a bonding layer under the conductive layer; a support member under the bonding layer; a first pad under the support member; a second pad under the support member at a distance from the first pad; a first electrode (171,173) connected between the first conductive type semiconductor layer and the first pad; a second electrode connected between the bonding layer and the second pad; characterised in that it further comprises: a stepped structure formed on at least a side surface of the light emitting structure layer, the stepped structure extending from a lower portion of side surface of the second conductive type semiconductor layer to a lower portion of the first conductive type semiconductor layer, and a first insulating member including a first insulating layer and a second insulating layer, said first insulating member being disposed at the stepped structure and extending to a side surface of the bonding layer and the inner portion of the first insulating member being disposed more inward than the outer side surface of the light emitting structure layer, wherein the bonding layer comprises a first bonding layer on the support member and a second bonding layer between the first bonding layer and the conductive layer, wherein the first insulating layer prevents the first connection electrode from making contact with other layers (120, 130, 145A), and wherein the second insulating layer is disposed between the second connection electrode and the second bonding layer to prevent physical contact therebetween. a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the light emitting structure layer; a bonding layer under the conductive layer; a support member under the bonding layer; a first pad under the support member; a second pad under the support member at a distance from the first pad; a first electrode (171,173) connected between the first conductive type semiconductor layer and the first pad; a second electrode connected between the bonding layer and the second pad; characterised in that it further comprises: a stepped structure formed on at least a side surface of the light emitting structure layer, the stepped structure extending from a lower portion of side surface of the second conductive type semiconductor layer to a lower portion of the first conductive type semiconductor layer, and a first insulating member including a first insulating layer and a second insulating layer, said first insulating member being disposed at the stepped structure and extending to a side surface of the bonding layer and the inner portion of the first insulating member being disposed more inward than the outer side surface of the light emitting structure layer, wherein the bonding layer comprises a first bonding layer on the support member and a second bonding layer between the first bonding layer and the conductive layer, wherein the first insulating layer prevents the first connection electrode from making contact with other layers (120, 130, 145A), and wherein the second insulating layer is disposed between the second connection electrode and the second bonding layer to prevent physical contact therebetween. a stepped structure formed on at least a side surface of the light emitting structure layer, the stepped structure extending from a lower portion of side surface of the second conductive type semiconductor layer to a lower portion of the first conductive type semiconductor layer, and a first insulating member including a first insulating layer and a second insulating layer, said first insulating member being disposed at the stepped structure and extending to a side surface of the bonding layer and the inner portion of the first insulating member being disposed more inward than the outer side surface of the light emitting structure layer, wherein the bonding layer comprises a first bonding layer on the support member and a second bonding layer between the first bonding layer and the conductive layer, wherein the first insulating layer prevents the first connection electrode from making contact with other layers (120, 130, 145A), and wherein the second insulating layer is disposed between the second connection electrode and the second bonding layer to prevent physical contact therebetween.