An electro-optical modulator comprising: a waveguide on a substrate (302,304), said waveguide being configured to guide a beam of radiation; a first p-i-n diode region on the substrate, the first region having a first doped section on a first side of the waveguide and a second doped section on a second side of the waveguide, the first side being opposite to the second side, wherein a first electric potential applied between a first electrode in the first doped section and a second electrode in the second doped section in the first p-i-n diode region is adapted to cause a first modulation to the beam of radiation; and a second p-i-n diode region on the substrate, the second region having a first doped section on the first side of the waveguide and a second doped section on the second side of the waveguide, wherein a second electric potential applied between a first electrode in the first doped section and a second electrode in the second doped section in the second p-i-n diode region is adapted to cause a second modulation to the beam of radiation, wherein the second p-i-n diode region is cascaded with the first p-i-n diode region, wherein an amplitude loss due to at least the first modulation and the second modulation is given as Δ α dB t = 10 ⋅ log 10 e − ∑ i = 1 M Δ α i N i t ⋅ L i, wherein M is the total number of cascaded p-i-n diode regions, Δα i is a loss coefficient per centimeter, N i (t) is a carrier injection level over time for the i th p-i-n diode region, and L i is a length of the i th p-i-n diode region, and wherein N i (t) and L i are chosen for each of the M p-i-n diode regions to achieve a substantially null residual amplitude modulation of the beam of radiation d ⁢ Δ α dB t dt = 0. a waveguide on a substrate (302,304), said waveguide being configured to guide a beam of radiation; a first p-i-n diode region on the substrate, the first region having a first doped section on a first side of the waveguide and a second doped section on a second side of the waveguide, the first side being opposite to the second side, wherein a first electric potential applied between a first electrode in the first doped section and a second electrode in the second doped section in the first p-i-n diode region is adapted to cause a first modulation to the beam of radiation; and a second p-i-n diode region on the substrate, the second region having a first doped section on the first side of the waveguide and a second doped section on the second side of the waveguide, wherein a second electric potential applied between a first electrode in the first doped section and a second electrode in the second doped section in the second p-i-n diode region is adapted to cause a second modulation to the beam of radiation, wherein the second p-i-n diode region is cascaded with the first p-i-n diode region, wherein an amplitude loss due to at least the first modulation and the second modulation is given as Δ α dB t = 10 ⋅ log 10 e − ∑ i = 1 M Δ α i N i t ⋅ L i, wherein M is the total number of cascaded p-i-n diode regions, Δα i is a loss coefficient per centimeter, N i (t) is a carrier injection level over time for the i th p-i-n diode region, and L i is a length of the i th p-i-n diode region, and wherein N i (t) and L i are chosen for each of the M p-i-n diode regions to achieve a substantially null residual amplitude modulation of the beam of radiation d ⁢ Δ α dB t dt = 0.