Power glitch signal detection circuit, comprising: a voltage sampling module, wherein the voltage sampling module includes: a capacitor for sampling a power supply voltage; and a first metal oxide semiconductor, MOS, transistor, wherein a gate terminal of the first MOS transistor is connected to the capacitor, a source terminal of the first MOS transistor is connected to a ground voltage, when there is no power glitch signal on the power supply voltage and no power glitch signal on the ground voltage, a voltage value of a drain terminal of the first MOS transistor equals to the ground voltage, and a voltage value of the gate terminal of the first MOS transistor equals to the power supply voltage sampled by the capacitor; wherein the power glitch signal detection circuit further comprising a second MOS transistor and a signal output module, wherein a terminal of the second MOS transistor is connected to the gate terminal of the first MOS transistor, another terminal of the second MOS transistor is connected to the power supply voltage, and the drain terminal of the second MOS transistor is connected to a drain terminal of the first MOS transistor; the signal output module is configured to generate and output a target signal according to change of a voltage value of the drain terminal of the second MOS transistor, and the target signal is used to indicate whether there is a power glitch signal on the power supply voltage or the ground voltage; wherein the power glitch signal detection circuit further comprises: a fourth MOS transistor, wherein one terminal of the capacitor connected to the gate terminal of the first MOS transistor is connected to the power supply voltage through the fourth MOS transistor, and the other terminal of the capacitor is connected to the ground voltage; and a fifth MOS transistor, wherein the drain terminal of the first MOS transistor is connected to the ground voltage through the fifth MOS transistor. a voltage sampling module, wherein the voltage sampling module includes: a capacitor for sampling a power supply voltage; and a first metal oxide semiconductor, MOS, transistor, wherein a gate terminal of the first MOS transistor is connected to the capacitor, a source terminal of the first MOS transistor is connected to a ground voltage, when there is no power glitch signal on the power supply voltage and no power glitch signal on the ground voltage, a voltage value of a drain terminal of the first MOS transistor equals to the ground voltage, and a voltage value of the gate terminal of the first MOS transistor equals to the power supply voltage sampled by the capacitor; wherein the power glitch signal detection circuit further comprising a second MOS transistor and a signal output module, wherein a terminal of the second MOS transistor is connected to the gate terminal of the first MOS transistor, another terminal of the second MOS transistor is connected to the power supply voltage, and the drain terminal of the second MOS transistor is connected to a drain terminal of the first MOS transistor; the signal output module is configured to generate and output a target signal according to change of a voltage value of the drain terminal of the second MOS transistor, and the target signal is used to indicate whether there is a power glitch signal on the power supply voltage or the ground voltage; a capacitor for sampling a power supply voltage; and a first metal oxide semiconductor, MOS, transistor, wherein a gate terminal of the first MOS transistor is connected to the capacitor, a source terminal of the first MOS transistor is connected to a ground voltage, when there is no power glitch signal on the power supply voltage and no power glitch signal on the ground voltage, a voltage value of a drain terminal of the first MOS transistor equals to the ground voltage, and a voltage value of the gate terminal of the first MOS transistor equals to the power supply voltage sampled by the capacitor; wherein the power glitch signal detection circuit further comprising a second MOS transistor and a signal output module, wherein a terminal of the second MOS transistor is connected to the gate terminal of the first MOS transistor, another terminal of the second MOS transistor is connected to the power supply voltage, and the drain terminal of the second MOS transistor is connected to a drain terminal of the first MOS transistor; the signal output module is configured to generate and output a target signal according to change of a voltage value of the drain terminal of the second MOS transistor, and the target signal is used to indicate whether there is a power glitch signal on the power supply voltage or the ground voltage; wherein the power glitch signal detection circuit further comprises: a fourth MOS transistor, wherein one terminal of the capacitor connected to the gate terminal of the first MOS transistor is connected to the power supply voltage through the fourth MOS transistor, and the other terminal of the capacitor is connected to the ground voltage; and a fifth MOS transistor, wherein the drain terminal of the first MOS transistor is connected to the ground voltage through the fifth MOS transistor. a fourth MOS transistor, wherein one terminal of the capacitor connected to the gate terminal of the first MOS transistor is connected to the power supply voltage through the fourth MOS transistor, and the other terminal of the capacitor is connected to the ground voltage; and a fifth MOS transistor, wherein the drain terminal of the first MOS transistor is connected to the ground voltage through the fifth MOS transistor.