A semiconductor device comprising: a substrate; a plurality of circuit units (10, 20, 30, 40) arranged above the substrate, each of the circuit units (10, 20, 30, 40) including a first electrode (11a, 21a, 31a, 41a), a second electrode (12a, 22a, 32a, 42a), a first switching element (13, 23, 33, 43) and a second switching element (14, 24, 34, 44) electrically connected in series between the first electrode (11a, 21a, 31a, 41a) and the second electrode (12a, 22a, 32a, 42a), a capacitor (15, 25, 35, 45) electrically connected in parallel to the first switching element (13, 23, 33, 43) and the second switching element (14, 24, 34, 44) between the first electrode (11a, 21a, 31a, 41a) and the second electrode (12a, 22a, 32a, 42a), and an AC electrode (16, 26, 36, 46) connected between the first switching element (13, 23, 33, 43) and the second switching element (14, 24, 34, 44); and a housing enclosing the circuit units (10, 20, 30, 40) and the substrate, wherein the first electrodes (11a, 21a, 31a, 41a) of the circuit units (10, 20, 30, 40) are configured to be connected to a first common potential, the second electrodes (12a, 22a, 32a, 42a) of the circuit units (10, 20, 30, 40) are configured to be connected to a second common potential, the AC electrodes (16, 26, 36, 46) of the circuit units (10, 20, 30, 40) are connected to one another, and a magnetic shielding panel of a conductor is provided between each two adjacent ones of the circuit units (10, 20, 30, 40); and wherein the magnetic shielding panel is continuously formed between facing inner side surfaces of the housing, said magnetic shielding panel extending from an inner side surface of the housing to the facing inner side surface of said housing. a substrate; a plurality of circuit units (10, 20, 30, 40) arranged above the substrate, each of the circuit units (10, 20, 30, 40) including a first electrode (11a, 21a, 31a, 41a), a second electrode (12a, 22a, 32a, 42a), a first switching element (13, 23, 33, 43) and a second switching element (14, 24, 34, 44) electrically connected in series between the first electrode (11a, 21a, 31a, 41a) and the second electrode (12a, 22a, 32a, 42a), a capacitor (15, 25, 35, 45) electrically connected in parallel to the first switching element (13, 23, 33, 43) and the second switching element (14, 24, 34, 44) between the first electrode (11a, 21a, 31a, 41a) and the second electrode (12a, 22a, 32a, 42a), and an AC electrode (16, 26, 36, 46) connected between the first switching element (13, 23, 33, 43) and the second switching element (14, 24, 34, 44); and a housing enclosing the circuit units (10, 20, 30, 40) and the substrate, wherein the first electrodes (11a, 21a, 31a, 41a) of the circuit units (10, 20, 30, 40) are configured to be connected to a first common potential, the second electrodes (12a, 22a, 32a, 42a) of the circuit units (10, 20, 30, 40) are configured to be connected to a second common potential, the AC electrodes (16, 26, 36, 46) of the circuit units (10, 20, 30, 40) are connected to one another, and a magnetic shielding panel of a conductor is provided between each two adjacent ones of the circuit units (10, 20, 30, 40); and wherein the magnetic shielding panel is continuously formed between facing inner side surfaces of the housing, said magnetic shielding panel extending from an inner side surface of the housing to the facing inner side surface of said housing.