A light emitting diode comprising: a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second (conductivity) type semiconductor layer; and a passivation layer on the light emitting structure, wherein the passivation layer comprises: a first passivation layer on a top surface of the light emitting structure; a second passivation layer having a refractive index different from and greater than that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure; and a pad electrode on the light emitting structure, characterized in that the first passivation layer and the second passivation layer are not formed in the pad electrode region such that they expose the top surface of the light emitting structure, in that the light emitting structure, the first passivation layer and the second passivation layer comprise a light extraction structure on a surface thereof, and the light extraction structure on the surface of the first passivation layer is disposed along with a uneven shape of the light extraction structure on the light emitting structure, wherein the shape of the light extraction structure is periodic, and the light extraction structure on the surface of the second passivation layer is disposed along with a shape of the first passivation layer. a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second (conductivity) type semiconductor layer; and a passivation layer on the light emitting structure, wherein the passivation layer comprises: a first passivation layer on a top surface of the light emitting structure; a second passivation layer having a refractive index different from and greater than that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure; and a pad electrode on the light emitting structure, characterized in that the first passivation layer and the second passivation layer are not formed in the pad electrode region such that they expose the top surface of the light emitting structure, in that the light emitting structure, the first passivation layer and the second passivation layer comprise a light extraction structure on a surface thereof, and the light extraction structure on the surface of the first passivation layer is disposed along with a uneven shape of the light extraction structure on the light emitting structure, wherein the shape of the light extraction structure is periodic, and the light extraction structure on the surface of the second passivation layer is disposed along with a shape of the first passivation layer. a first passivation layer on a top surface of the light emitting structure; a second passivation layer having a refractive index different from and greater than that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure; and a pad electrode on the light emitting structure, characterized in that the first passivation layer and the second passivation layer are not formed in the pad electrode region such that they expose the top surface of the light emitting structure, in that the light emitting structure, the first passivation layer and the second passivation layer comprise a light extraction structure on a surface thereof, and the light extraction structure on the surface of the first passivation layer is disposed along with a uneven shape of the light extraction structure on the light emitting structure, wherein the shape of the light extraction structure is periodic, and the light extraction structure on the surface of the second passivation layer is disposed along with a shape of the first passivation layer.