An organic electroluminescent device comprising: a structure in which an anode; a hole transporting area; a light emitting layer; an electron transporting area, and a cathode are sequentially stacked, wherein the light emitting layer includes a host, each of the hole transporting area and the electron transporting area comprises at least two layers, one of the at least two layers of the hole transporting area contacting the light emitting layer is an electron-leakage suppression layer E-LSL, one of the at least two layers of the electron transporting area contacting the light emitting layer is a hole-leakage suppression layer H-LSL, a density of states of HOMO DOS HOMO and a density of states of LUMO DOS LUMO of each of the material that forms the electron-leakage suppression layer E-LSL and the material that forms the hole-leakage suppression layer H-LSL satisfy at least one of the following conditions (i) and (ii): (i) with respect to the density of states of LUMO, a density of states of LUMO DOS LUMO HOST of the host overlaps the density of states of LUMO DOS LUMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL and does not overlap the density of states of LUMO DOS LUMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL, and (ii) with respect to the density of states of HOMO, a density of states of HOMO DOS HOMO) HOST of the host overlaps the density of states of HOMO DOS HOMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL and does not overlap the density of states of HOMO DOS HOMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL, and wherein the density of states of HOMO DOS HOMO and the density of states of LUMO DOS LUMO are calculated according to the method described in the description. a structure in which an anode; a hole transporting area; a light emitting layer; an electron transporting area, and a cathode are sequentially stacked, wherein the light emitting layer includes a host, each of the hole transporting area and the electron transporting area comprises at least two layers, one of the at least two layers of the hole transporting area contacting the light emitting layer is an electron-leakage suppression layer E-LSL, one of the at least two layers of the electron transporting area contacting the light emitting layer is a hole-leakage suppression layer H-LSL, a density of states of HOMO DOS HOMO and a density of states of LUMO DOS LUMO of each of the material that forms the electron-leakage suppression layer E-LSL and the material that forms the hole-leakage suppression layer H-LSL satisfy at least one of the following conditions (i) and (ii): (i) with respect to the density of states of LUMO, a density of states of LUMO DOS LUMO HOST of the host overlaps the density of states of LUMO DOS LUMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL and does not overlap the density of states of LUMO DOS LUMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL, and (ii) with respect to the density of states of HOMO, a density of states of HOMO DOS HOMO) HOST of the host overlaps the density of states of HOMO DOS HOMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL and does not overlap the density of states of HOMO DOS HOMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL, and wherein the density of states of HOMO DOS HOMO and the density of states of LUMO DOS LUMO are calculated according to the method described in the description. (i) with respect to the density of states of LUMO, a density of states of LUMO DOS LUMO HOST of the host overlaps the density of states of LUMO DOS LUMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL and does not overlap the density of states of LUMO DOS LUMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL, and (ii) with respect to the density of states of HOMO, a density of states of HOMO DOS HOMO) HOST of the host overlaps the density of states of HOMO DOS HOMO E-LSL of the material that forms the electron-leakage suppression layer E-LSL and does not overlap the density of states of HOMO DOS HOMO H-LSL of the material that forms the hole-leakage suppression layer H-LSL, and wherein the density of states of HOMO DOS HOMO and the density of states of LUMO DOS LUMO are calculated according to the method described in the description.