Method for providing information (Info) on an ageing status of a semiconductor component (IGBT1) of power electronics by - prior to commissioning the semiconductor component: • determining a characteristic curve of a temperature of the semiconductor component relative to an electric voltage on the semiconductor component (IGBT1) and • determining a resistance reference value of a thermal resistance of the semiconductor component from the quotient of a temperature difference and a power loss of the semiconductor component, - after commissioning the semiconductor component: • measuring a voltage on the semiconductor component at a measuring current and determining a temperature reference value from the measured voltage on the basis of the characteristic curve, • heating the semiconductor component by means of a load current producing a power loss, measuring a current voltage with the measuring current on the semiconductor component after heating and determining a current temperature value from the current voltage on the basis of the characteristic curve, • determining a current thermal resistance value of the semiconductor component from a temperature difference, which is determined between the current temperature value and the temperature reference value, and the power loss, • determining a difference between the current thermal resistance value and the resistance reference value and • outputting the information (Info) on the ageing status of the semiconductor component as a function of the difference, wherein a communication system is provided for integration, which transmits information on the ageing status of semiconductor components by means of suitable communication connections, and wherein a power of the semiconductor component is controlled as a function of the output information (Info). - prior to commissioning the semiconductor component: • determining a characteristic curve of a temperature of the semiconductor component relative to an electric voltage on the semiconductor component (IGBT1) and • determining a resistance reference value of a thermal resistance of the semiconductor component from the quotient of a temperature difference and a power loss of the semiconductor component, • determining a characteristic curve of a temperature of the semiconductor component relative to an electric voltage on the semiconductor component (IGBT1) and • determining a resistance reference value of a thermal resistance of the semiconductor component from the quotient of a temperature difference and a power loss of the semiconductor component, - after commissioning the semiconductor component: • measuring a voltage on the semiconductor component at a measuring current and determining a temperature reference value from the measured voltage on the basis of the characteristic curve, • heating the semiconductor component by means of a load current producing a power loss, measuring a current voltage with the measuring current on the semiconductor component after heating and determining a current temperature value from the current voltage on the basis of the characteristic curve, • determining a current thermal resistance value of the semiconductor component from a temperature difference, which is determined between the current temperature value and the temperature reference value, and the power loss, • determining a difference between the current thermal resistance value and the resistance reference value and • outputting the information (Info) on the ageing status of the semiconductor component as a function of the difference, • measuring a voltage on the semiconductor component at a measuring current and determining a temperature reference value from the measured voltage on the basis of the characteristic curve, • heating the semiconductor component by means of a load current producing a power loss, measuring a current voltage with the measuring current on the semiconductor component after heating and determining a current temperature value from the current voltage on the basis of the characteristic curve, • determining a current thermal resistance value of the semiconductor component from a temperature difference, which is determined between the current temperature value and the temperature reference value, and the power loss, • determining a difference between the current thermal resistance value and the resistance reference value and • outputting the information (Info) on the ageing status of the semiconductor component as a function of the difference,