An organic light emitting display comprising: a substrate; and a plurality of sub-pixels, each sub-pixel having: a first area for light emission; a second area comprising a gate electrode, a source electrode, and a drain electrode of a transistor, the second area being different than the first area; and a first reflection reduction layer (152a, 152b), a second reflection reduction layer, and a third reflection reduction layer (157a, 157b); wherein the first reflection reduction layer (152a, 152b), the second reflection reduction layer, and the third reflection reduction layer (157a; 157b) are in the second area but not the first area; wherein the first reflection reduction layer (152a, 152b) is located between the gate electrode and the substrate, the second reflection reduction layer is located between the source electrode and the substrate, and the third reflection reduction layer (157a; 157b) is located between the drain electrode and the substrate; wherein the first reflection reduction layer (152a, 152b), the second reflection reduction layer, and the third reflection reduction layer (157a, 157b) have lower light reflectability than a material of the transistor electrodes (152; 156; 157); wherein the first reflection reduction layer (152a, 152b) and the gate electrode have a same patterned shape, the second reflection reduction layer and the source electrode have a same patterned shape, and the third reflection reduction layer (157a; 157b) and the drain electrode have a same patterned shape; wherein the first reflection reduction layer (152a, 152b) is included in the material of the gate electrode, the second reflection reduction layer is included in the material of the source electrode, and the third reflection reduction layer (157a; 157b) is included in the material of the drain electrode. a substrate; and a plurality of sub-pixels, each sub-pixel having: a first area for light emission; a second area comprising a gate electrode, a source electrode, and a drain electrode of a transistor, the second area being different than the first area; and a first reflection reduction layer (152a, 152b), a second reflection reduction layer, and a third reflection reduction layer (157a, 157b); a first area for light emission; a second area comprising a gate electrode, a source electrode, and a drain electrode of a transistor, the second area being different than the first area; and a first reflection reduction layer (152a, 152b), a second reflection reduction layer, and a third reflection reduction layer (157a, 157b); wherein the first reflection reduction layer (152a, 152b), the second reflection reduction layer, and the third reflection reduction layer (157a; 157b) are in the second area but not the first area; wherein the first reflection reduction layer (152a, 152b) is located between the gate electrode and the substrate, the second reflection reduction layer is located between the source electrode and the substrate, and the third reflection reduction layer (157a; 157b) is located between the drain electrode and the substrate; wherein the first reflection reduction layer (152a, 152b), the second reflection reduction layer, and the third reflection reduction layer (157a, 157b) have lower light reflectability than a material of the transistor electrodes (152; 156; 157); wherein the first reflection reduction layer (152a, 152b) and the gate electrode have a same patterned shape, the second reflection reduction layer and the source electrode have a same patterned shape, and the third reflection reduction layer (157a; 157b) and the drain electrode have a same patterned shape; wherein the first reflection reduction layer (152a, 152b) is included in the material of the gate electrode, the second reflection reduction layer is included in the material of the source electrode, and the third reflection reduction layer (157a; 157b) is included in the material of the drain electrode.