A touch screen display apparatus, comprising a touch structure, wherein the touch structure comprises: multiple driving lines arranged in a column direction, multiple sensing lines arranged in a row direction, a preamplifier, a frequency outputter, a first shift register (SR1, 700), a second shift register, wherein the frequency outputter is configured to output a driving signal at a predetermined frequency, wherein the first shift register (SR1, 700) is configured to output the driving signal output to each driving line, wherein the second shift register is configured to output a sensing signal from each sensing line to the preamplifier, and wherein the preamplifier is configured to output an amplified sensing signal based on the sensing signal from the second shift register, a thin-film transistor, TFT, substrate on which the first shift register and the second shift register are fabricated; a color filter, CF, substrate, wherein the driving lines are fabricated on the CF substrate or the TFT substrate, and the sensing lines are fabricated on the CF substrate or the TFT substrate; and further comprising selection switches, wherein one output end of each sensing line is electrically connected to a first end of one of the selection switches, a second end of the selection switch is electrically connected to an inverting input of the preamplifier, and an output end of the second shift register is electrically connected to a control end of each selection switch; wherein scanning lines are arranged on the TFT substrate to be electrically connected to one of the first shift register and the second shift register; wherein the number of the scanning lines is the same as the number of output lines in the first shift register, and one of every N output lines in the first shift register is connected to a corresponding driving line; or wherein the number of the scanning lines is the same as the number of output lines in the second shift register, and one of every Z output lines in the second shift register is connected to a corresponding sensing line; wherein N is an integer of 2 or above, and Z is an integer of 2 or above; wherein the first shift register (SR1, 700) and the second shift register are shift registers composed of a material of amorphous silicon or low temperature poly-silicon or indium gallium zinc oxide, and different layers of metals together. multiple driving lines arranged in a column direction, multiple sensing lines arranged in a row direction, a preamplifier, a frequency outputter, a first shift register (SR1, 700), a second shift register, wherein the frequency outputter is configured to output a driving signal at a predetermined frequency, wherein the first shift register (SR1, 700) is configured to output the driving signal output to each driving line, wherein the second shift register is configured to output a sensing signal from each sensing line to the preamplifier, and wherein the preamplifier is configured to output an amplified sensing signal based on the sensing signal from the second shift register, a thin-film transistor, TFT, substrate on which the first shift register and the second shift register are fabricated; a color filter, CF, substrate, wherein the driving lines are fabricated on the CF substrate or the TFT substrate, and the sensing lines are fabricated on the CF substrate or the TFT substrate; and further comprising selection switches, wherein one output end of each sensing line is electrically connected to a first end of one of the selection switches, a second end of the selection switch is electrically connected to an inverting input of the preamplifier, and an output end of the second shift register is electrically connected to a control end of each selection switch; wherein scanning lines are arranged on the TFT substrate to be electrically connected to one of the first shift register and the second shift register; wherein the number of the scanning lines is the same as the number of output lines in the first shift register, and one of every N output lines in the first shift register is connected to a corresponding driving line; or wherein the number of the scanning lines is the same as the number of output lines in the second shift register, and one of every Z output lines in the second shift register is connected to a corresponding sensing line; wherein N is an integer of 2 or above, and Z is an integer of 2 or above; wherein the first shift register (SR1, 700) and the second shift register are shift registers composed of a material of amorphous silicon or low temperature poly-silicon or indium gallium zinc oxide, and different layers of metals together.