A light emitting diode package comprising: a body (110, 210, 310) having a cavity; a first lead frame (121, 221, 321) mounted on the body (110, 210, 310); a second lead frame (122, 222, 322) mounted on the body (110, 210, 310) and separated from the first lead frame (121, 221, 321); and a light emitting diode (130, 230, 330) mounted in the cavity and disposed between the first lead frame (121, 221, 321) and the second lead frame (122, 222, 322), wherein the light emitting diode (130, 230, 330) includes sequentially stacked a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, and the sequentially stacked direction of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is parallel with the bottom surface of the cavity, and the first lead frame (121, 221, 321) includes a first connection part (141, 241, 341) electrically connected to the first conductivity type semiconductor layer, and the second lead frame (122, 222, 322) includes a second connection part (142, 242, 342) electrically connected to the second conductivity type semiconductor layer, wherein an electrode pattern is formed on one surface of the first conductivity type semiconductor layer or the second conductivity type semiconductor layer, and in contact with the first connection part (141, 241, 341) or the second connection part (142, 242, 342), respectively, characterized in that the cavity includes a first cavity having a first depth h1 and a second cavity having a second depth h2 greater than the first depth h1, and the light emitting diode (130, 230, 330) is mounted in the second cavity, wherein at least one area of the first lead frame and the second lead frame is bent according to the shapes of the first cavity C3 and the second cavity C4, respectively, and wherein a reflective layer is disposed on inclined planes of the first lead frame and the second lead frame. a body (110, 210, 310) having a cavity; a first lead frame (121, 221, 321) mounted on the body (110, 210, 310); a second lead frame (122, 222, 322) mounted on the body (110, 210, 310) and separated from the first lead frame (121, 221, 321); and a light emitting diode (130, 230, 330) mounted in the cavity and disposed between the first lead frame (121, 221, 321) and the second lead frame (122, 222, 322), wherein the light emitting diode (130, 230, 330) includes sequentially stacked a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, and the sequentially stacked direction of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is parallel with the bottom surface of the cavity, and the first lead frame (121, 221, 321) includes a first connection part (141, 241, 341) electrically connected to the first conductivity type semiconductor layer, and the second lead frame (122, 222, 322) includes a second connection part (142, 242, 342) electrically connected to the second conductivity type semiconductor layer, wherein an electrode pattern is formed on one surface of the first conductivity type semiconductor layer or the second conductivity type semiconductor layer, and in contact with the first connection part (141, 241, 341) or the second connection part (142, 242, 342), respectively, characterized in that the cavity includes a first cavity having a first depth h1 and a second cavity having a second depth h2 greater than the first depth h1, and the light emitting diode (130, 230, 330) is mounted in the second cavity, wherein at least one area of the first lead frame and the second lead frame is bent according to the shapes of the first cavity C3 and the second cavity C4, respectively, and wherein a reflective layer is disposed on inclined planes of the first lead frame and the second lead frame.