A method of forming a memory device, comprising: forming a first insulation layer on a semiconductor substrate; forming a layer of conductive material on the first insulation layer; forming an insulation block on the layer of conductive material; forming an insulation spacer along a side surface of the insulation block and on the layer of conductive material; etching the layer of conductive material to form a block of the conductive material disposed directly under the insulation block and the insulation spacer while leaving a portion of the first insulation layer on the semiconductor substrate adjacent the block of the conductive material; removing the insulation spacer, leaving exposed a portion of a top surface and an upper edge of the block of the conductive material while leaving the portion of the first insulation layer on the semiconductor substrate adjacent the block of the conductive material; forming a second insulation layer having a first portion wrapping around the exposed upper edge of the block of the conductive material and a second portion disposed on a first portion of the first insulation layer laterally adjacent to the block of the conductive material; forming a conductive block having a first portion disposed over the second insulation layer second portion and the portion of the first insulation layer, and a second portion that extends up and over the block of the conductive material, wherein the conductive block first portion is laterally adjacent to and insulated from the block of the conductive material, and wherein the conductive block extends along the first portion of the second insulation layer; and forming spaced apart source and drain regions (28, 42) in the semiconductor substrate, with a channel region extending there between, wherein the block of the conductive material is disposed over a first portion of the channel region and the source region, and wherein the first portion of the conductive block is disposed over a second portion of the channel region and insulated therefrom by the first insulation layer and the second insulation layer. forming a first insulation layer on a semiconductor substrate; forming a layer of conductive material on the first insulation layer; forming an insulation block on the layer of conductive material; forming an insulation spacer along a side surface of the insulation block and on the layer of conductive material; etching the layer of conductive material to form a block of the conductive material disposed directly under the insulation block and the insulation spacer while leaving a portion of the first insulation layer on the semiconductor substrate adjacent the block of the conductive material; removing the insulation spacer, leaving exposed a portion of a top surface and an upper edge of the block of the conductive material while leaving the portion of the first insulation layer on the semiconductor substrate adjacent the block of the conductive material; forming a second insulation layer having a first portion wrapping around the exposed upper edge of the block of the conductive material and a second portion disposed on a first portion of the first insulation layer laterally adjacent to the block of the conductive material; forming a conductive block having a first portion disposed over the second insulation layer second portion and the portion of the first insulation layer, and a second portion that extends up and over the block of the conductive material, wherein the conductive block first portion is laterally adjacent to and insulated from the block of the conductive material, and wherein the conductive block extends along the first portion of the second insulation layer; and forming spaced apart source and drain regions (28, 42) in the semiconductor substrate, with a channel region extending there between, wherein the block of the conductive material is disposed over a first portion of the channel region and the source region, and wherein the first portion of the conductive block is disposed over a second portion of the channel region and insulated therefrom by the first insulation layer and the second insulation layer.