mhurhangee/ep-ind-claims huggingface dataset:
A monolithic three-dimensional memory device, comprising: a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate; an insulating cap layer overlying the first alternating stack (132, 146); a second alternating stack of second insulating layers and second electrically conductive layers overlying the insulating cap layer; and a memory stack structure extending through the second alternating stack (232, 246), the insulating cap layer, and the first alternating stack (132, 146) and comprising a semiconductor channel and a memory film including a plurality of charge storage regions, characterized in that: the insulating cap layer comprises a first concave surface having a first radius of curvature, laterally surrounding the memory stack structure, and adjoined to an upper periphery of a substantially vertical sidewall of the memory stack structure within the first alternating stack (132, 146); and the insulating cap layer comprises a second concave surface having a second radius of curvature that is greater than the first radius of curvature, laterally surrounding the memory stack structure, and adjoined to an upper periphery of the first concave surface, such that the memory stack structure is not having an horizontal portion adjacent to the insulating cap layer. a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate; an insulating cap layer overlying the first alternating stack (132, 146); a second alternating stack of second insulating layers and second electrically conductive layers overlying the insulating cap layer; and a memory stack structure extending through the second alternating stack (232, 246), the insulating cap layer, and the first alternating stack (132, 146) and comprising a semiconductor channel and a memory film including a plurality of charge storage regions, characterized in that: the insulating cap layer comprises a first concave surface having a first radius of curvature, laterally surrounding the memory stack structure, and adjoined to an upper periphery of a substantially vertical sidewall of the memory stack structure within the first alternating stack (132, 146); and the insulating cap layer comprises a second concave surface having a second radius of curvature that is greater than the first radius of curvature, laterally surrounding the memory stack structure, and adjoined to an upper periphery of the first concave surface, such that the memory stack structure is not having an horizontal portion adjacent to the insulating cap layer. the insulating cap layer comprises a second concave surface having a second radius of curvature that is greater than the first radius of curvature, laterally surrounding the memory stack structure, and adjoined to an upper periphery of the first concave surface, such that the memory stack structure is not having an horizontal portion adjacent to the insulating cap layer.
Apparatus comprising: - a bearing frame suitable for being connected to a supporting element (E, T) and to suction means; - a suction assembly connected to the bearing frame; said suction assembly comprising a suction mouth connected to a suction duct in order to suck the air; - a joint connecting the bearing frame to the suction assembly; - at least one accessory unit comprising a pneumatic and/or electric/electronic accessory and a supporting arm with a duct connected to the joint, wherein said bearing frame comprises a central duct; said joint comprises a central compartment, wherein an end of said bearing frame is disposed in said central compartment of the joint so that said central duct of the bearing frame communicates with the suction duct of the suction assembly, characterized in that said bearing frame comprises a peripheral duct; said joint comprises and a peripheral compartment in communication with said central compartment; an end of said duct of the supporting arm of the accessory unit is arranged in said peripheral compartment; said peripheral duct of the bearing frame communicates with said peripheral compartment of the joint and with said duct of the supporting arm of the accessory unit. - a bearing frame suitable for being connected to a supporting element (E, T) and to suction means; - a suction assembly connected to the bearing frame; said suction assembly comprising a suction mouth connected to a suction duct in order to suck the air; - a joint connecting the bearing frame to the suction assembly; - at least one accessory unit comprising a pneumatic and/or electric/electronic accessory and a supporting arm with a duct connected to the joint, wherein said bearing frame comprises a central duct; said joint comprises a central compartment, wherein an end of said bearing frame is disposed in said central compartment of the joint so that said central duct of the bearing frame communicates with the suction duct of the suction assembly, characterized in that said bearing frame comprises a peripheral duct; said joint comprises and a peripheral compartment in communication with said central compartment; an end of said duct of the supporting arm of the accessory unit is arranged in said peripheral compartment; said peripheral duct of the bearing frame communicates with said peripheral compartment of the joint and with said duct of the supporting arm of the accessory unit.
A fermented food that comprises: a Rubus suavissimus S. Lee essence which is obtained as a concentrate through electrodialyzing a Rubus suavissimus S. Lee extract added with an inorganic salt; and bacteria of the genus Bifidobacterium. a Rubus suavissimus S. Lee essence which is obtained as a concentrate through electrodialyzing a Rubus suavissimus S. Lee extract added with an inorganic salt; and bacteria of the genus Bifidobacterium.
A structure, comprising: - a substrate, - an insulating layer above the substrate, - a first metal layer above a first portion of the insulating layer, - a first porous region of anodic oxide, above and in contact with the first metal layer, and - a second porous region of anodic oxide, surrounding the first porous region, in contact with a second portion of the insulating layer adjacent to the first portion of the insulating layer, and in contact with the first metal layer, the second porous region forming an insulating region. - a substrate, - an insulating layer above the substrate, - a first metal layer above a first portion of the insulating layer, - a first porous region of anodic oxide, above and in contact with the first metal layer, and - a second porous region of anodic oxide, surrounding the first porous region, in contact with a second portion of the insulating layer adjacent to the first portion of the insulating layer, and in contact with the first metal layer, the second porous region forming an insulating region.
Electrical power supply device for delivering an electrical power supply to a wireless sensor unit, with the power supply device comprising: - a first means of generating electrical energy configured to recover an ambient energy in the environment of the sensor unit and to produce an electrical energy according to the ambient energy recovered, - a second means of generating electrical energy comprising a battery, in order to deliver a backup electrical energy, - a means for storing electrical energy comprising a capacitor arranged in such a way as to receive an electrical energy coming from the first means of generating and/or from the second means of generating, and to apply a given level of electrical power (V DD) to the sensor unit, - a circuit for managing electrical energy configured to maintain the given level of electrical power (V DD) higher than a lower limit (V minC1), said circuit being further configured to limit said given level of electrical power lower than an upper limit (V MAXC1), said circuit comprising a unipolar transistor (14A, 14B, 14C, 14D) and with a conducting channel when its gate-source voltage (V GS) is zero, with the unipolar transistor being arranged in relation to the first means of generating, to the second means of generating, and to the means of storage, in such a way that the gate-source voltage depends on a difference between the electrical energy delivered by the second means of generating and the given level of power supply (V DD). - a first means of generating electrical energy configured to recover an ambient energy in the environment of the sensor unit and to produce an electrical energy according to the ambient energy recovered, - a second means of generating electrical energy comprising a battery, in order to deliver a backup electrical energy, - a means for storing electrical energy comprising a capacitor arranged in such a way as to receive an electrical energy coming from the first means of generating and/or from the second means of generating, and to apply a given level of electrical power (V DD) to the sensor unit, - a circuit for managing electrical energy configured to maintain the given level of electrical power (V DD) higher than a lower limit (V minC1),
An undercarriage for a medical treatment apparatus, the undercarriage comprising at least: - a caster having a first rotational axis and a first tread surface comprising a first radius; - a support in or on which the rotational axis is held; - a second tread surface arranged to be rotatable about a second rotational axis, the second rotational axis being identical to the first rotational axis, the second tread surface comprising a second radius, the second radius being smaller than the first radius; and - a track being in contact with the second tread surface and movable relative thereto, characterized in that the track of the undercarriage comprises a front end and a rear end, both ends (171, 173) being, each, directly or indirectly connected to a section of the support or prepared to be connected to the housing section. - a caster having a first rotational axis and a first tread surface comprising a first radius; - a support in or on which the rotational axis is held; - a second tread surface arranged to be rotatable about a second rotational axis, the second rotational axis being identical to the first rotational axis, the second tread surface comprising a second radius, the second radius being smaller than the first radius; and - a track being in contact with the second tread surface and movable relative thereto, characterized in that the track of the undercarriage comprises a front end and a rear end, both ends (171, 173) being, each, directly or indirectly connected to a section of the support or prepared to be connected to the housing section.
A method of fabricating a semiconductor structure, the method comprising: forming a stack of alternating dielectric materials and control gate materials, each of the dielectric materials of the stack comprising at least two portions of materials formulated to have different rates of removal when exposed to the same etch chemistry and having different densities; forming an opening through the stack of alternating dielectric materials and control gate materials; removing a portion of the control gate materials to form control gate recesses adjacent the control gate materials; removing portions of the dielectric materials adjacent the control gate recesses to increase a height of the control gate recesses; forming a charge blocking material (411, 412, 413) adjacent exposed surfaces of the control gate materials; thereafter filling the control gate recesses with a charge storage material; and removing excess portions of the charge storage material within the opening to form discrete charge storage structures, wherein a vertical, exposed surface of the discrete charge storage structures is coplanar with a vertical, exposed surface of a dielectric material of the charge blocking material (411, 412, 413), and wherein a height (L 3) of each of the discrete charge storage structures is the same as a height (L 1) of the adjacent control gate materials. forming a stack of alternating dielectric materials and control gate materials, each of the dielectric materials of the stack comprising at least two portions of materials formulated to have different rates of removal when exposed to the same etch chemistry and having different densities; forming an opening through the stack of alternating dielectric materials and control gate materials; removing a portion of the control gate materials to form control gate recesses adjacent the control gate materials; removing portions of the dielectric materials adjacent the control gate recesses to increase a height of the control gate recesses; forming a charge blocking material (411, 412, 413) adjacent exposed surfaces of the control gate materials; thereafter filling the control gate recesses with a charge storage material; and removing excess portions of the charge storage material within the opening to form discrete charge storage structures, wherein a vertical, exposed surface of the discrete charge storage structures is coplanar with a vertical, exposed surface of a dielectric material of the charge blocking material (411, 412, 413), and wherein a height (L 3) of each of the discrete charge storage structures is the same as a height (L 1) of the adjacent control gate materials.
A combined device (10, 10', 10", 10′′′, 10"") for electrical protection against transient overvoltages and monitoring of an electrical installation, as used in single-phase alternating voltage installations or multi-phase alternating voltage installations, which is formed by plug-in cartridges plugged to a fixed base or which is formed by a monoblock, comprising a minimum of one protection group formed by one or more protective components against transient overvoltages in each plug-in cartridge or in the monoblock, the protective component being such as varistor(s), gas arresters, gas discharge tube(s), spark gap(s), suppressor diode(s), triac(s), thyristor(s), and/or MOSFET(s) or other technically equivalent components, wherein the combined device comprises: - means of monitoring configured in order to permanently measure and process one or several parameters in relation to the condition of the electrical installation and the protective device itself, and - means of indication connected to said means of monitoring, wherein the means of indication are set up in such a way as to indicate if the earth resistance value R PE of the earthing system of the electrical installation measured by the combined device is inside or outside of certain predetermined limits or margins R PEMIN and R PEmax; characterized in that the means of monitoring are configured to measure the earth resistance value R PE by: - providing current impulses through a terminal PE, to be injected into a phase-earth loop of the electrical installation when, in use, said terminal PE is electrically connected to said phase-earth loop, and - by monitoring an increase in voltage in the earthing system of the electrical installation caused by the injected current impulses; and wherein the means of monitoring are configured to use a dynamic method to control individually the angle of injection of each current impulse depending on the value of the AC supply voltage (V L), and/or on previously obtained earth resistance values R PE of the earthing system of the electrical installation, and/or on the stability of the earth resistance value R PE. - means of monitoring configured in order to permanently measure and process one or several parameters in relation to the condition of the electrical installation and the protective device itself, and - means of indication connected to said means of monitoring, wherein the means of indication are set up in such a way as to indicate if the earth resistance value R PE of the earthing system of the electrical installation measured by the combined device is inside or outside of certain predetermined limits or margins R PEMIN and R PEmax; - providing current impulses through a terminal PE, to be injected into a phase-earth loop of the electrical installation when, in use, said terminal PE is electrically connected to said phase-earth loop, and - by monitoring an increase in voltage in the earthing system of the electrical installation caused by the injected current impulses;
A process for preparing disentangled ultrahigh molecular weight polyethylene graft copolymers, said process comprising the following steps; i. admixing disentangled ultrahigh molecular weight polyethylene, at least one functional monomer and a free radical initiator to obtain a mixture; and ii. subjecting the mixture to solid state polymerization to obtain a graft copolymer of disentangled ultrahigh molecular weight polyethylene. i. admixing disentangled ultrahigh molecular weight polyethylene, at least one functional monomer and a free radical initiator to obtain a mixture; and ii. subjecting the mixture to solid state polymerization to obtain a graft copolymer of disentangled ultrahigh molecular weight polyethylene.
A method of manufacturing a multilayer connector device suitable for making an inter or intra static electrical energy converter(s) connection, said device comprising at least two flat conductors and at least one insulating material disposed between the two above-mentioned conductors, said method being characterized in that: • the flat conductors, possibly prepared, are positioned in a tank in a geometric position such that the conductors are kept parallel and spaced apart by a value at least equal to the thickness of the desired electrical insulation, said conductors having a preferential orientation, • said prepared flat conductors are impregnated with at least one impregnating resin introduced into the tank, so that the level of impregnating resin gradually rises in the tank, said impregnating resin having physico-chemical characteristics enabling, after extraction from the tank, it to be maintained in the form of a coating layer on all the accessible faces of said flat conductors, • the device is removed from said tank, • the said impregnating resin is cross-linked to assemble the flat conductors by means of the said impregnating resin. • the flat conductors, possibly prepared, are positioned in a tank in a geometric position such that the conductors are kept parallel and spaced apart by a value at least equal to the thickness of the desired electrical insulation, said conductors having a preferential orientation, • said prepared flat conductors are impregnated with at least one impregnating resin introduced into the tank, so that the level of impregnating resin gradually rises in the tank, said impregnating resin having physico-chemical characteristics enabling, after extraction from the tank, it to be maintained in the form of a coating layer on all the accessible faces of said flat conductors, • the device is removed from said tank, • the said impregnating resin is cross-linked to assemble the flat conductors by means of the said impregnating resin.
A method executed by a user equipment, UE, the method comprising: receiving a Downlink Control Information, DCI, format NO; determining to transmit a narrowband physical uplink shared channel, NPUSCH, for a Msg3 scheduled by the DCI format NO based on a modulation and coding scheme field in the DCI format NO; characterized in that the method further comprises transmitting the NPUSCH for the Msg3 based on the determination, such that transmission of the NPUSCH for the Msg3 is based on early data transmission, EDT, when the modulation and coding scheme field indicates a value of 15, while the transmission of the NPUSCH for the Msg3 is not based on the EDT when the modulation and coding scheme field indicates a value equal to or smaller than 10. receiving a Downlink Control Information, DCI, format NO; determining to transmit a narrowband physical uplink shared channel, NPUSCH, for a Msg3 scheduled by the DCI format NO based on a modulation and coding scheme field in the DCI format NO; characterized in that the method further comprises transmitting the NPUSCH for the Msg3 based on the determination, such that transmission of the NPUSCH for the Msg3 is based on early data transmission, EDT, when the modulation and coding scheme field indicates a value of 15, while the transmission of the NPUSCH for the Msg3 is not based on the EDT when the modulation and coding scheme field indicates a value equal to or smaller than 10.
A method for subscriber aware network monitoring comprising: determining subscriber and session data, at a network probe, storing the subscriber and session data in a database, wherein the subscriber has a non-unique IP address; retrieving identifying data from a packet, at a network address translation, NAT, traffic probe, wherein the NAT traffic probe is intended to observe IP traffic on the internet side of a Carrier Grade NAT, CGN device, the NAT traffic probe includes a NAT cache component; determining the direction of the packet using the NAT cache component providing from the NAT traffic probe the identifying data as triplet of IP address, protocol and port to the NAT cache component when the packet is determined by the NAT cache component as bound for the Internet; assigning using the CGN device the IP address and port from the determined triplet; determining, using the NAT cache component, whether a NAT-tuple corresponding to the triplet is found; and attaching a subscriber identity using the NAT tuple to the packet being processed if the NAT-tuple is found; or requesting the database, using the NAT traffic probe, to search for an entry if the NAT tuple is not found. determining subscriber and session data, at a network probe, storing the subscriber and session data in a database, wherein the subscriber has a non-unique IP address; retrieving identifying data from a packet, at a network address translation, NAT, traffic probe, wherein the NAT traffic probe is intended to observe IP traffic on the internet side of a Carrier Grade NAT, CGN device, the NAT traffic probe includes a NAT cache component; determining the direction of the packet using the NAT cache component providing from the NAT traffic probe the identifying data as triplet of IP address, protocol and port to the NAT cache component when the packet is determined by the NAT cache component as bound for the Internet; assigning using the CGN device the IP address and port from the determined triplet; determining, using the NAT cache component, whether a NAT-tuple corresponding to the triplet is found; and attaching a subscriber identity using the NAT tuple to the packet being processed if the NAT-tuple is found; or requesting the database, using the NAT traffic probe, to search for an entry if the NAT tuple is not found.
A process for producing a pharmaceutical lozenge formulation comprising the steps of: (a) providing a liquid composition comprising a salt of a non-steroidal antiinflammatory drug (NSAID salt) and a solvent system; (b) providing a molten lozenge-forming composition; (c) mixing the liquid composition with the molten lozenge-forming composition; and, (d) forming the resulting mixture into lozenges each containing a therapeutically effective amount of a NSAID salt/NSAID mixture; wherein the NSAID salt comprises a salt of an aryl propionic acid comprising flurbiprofen or ibuprofen, preferably flurbiprofen. (a) providing a liquid composition comprising a salt of a non-steroidal antiinflammatory drug (NSAID salt) and a solvent system; (b) providing a molten lozenge-forming composition; (c) mixing the liquid composition with the molten lozenge-forming composition; and, (d) forming the resulting mixture into lozenges each containing a therapeutically effective amount of a NSAID salt/NSAID mixture;