Method for the spatially resolved determination of the series resistance of a semiconductor structure, which is a solar cell or a stage preliminary to a solar cell, comprising at least one pn-junction and contacts for electrically contacting the semiconductor structure, the method comprising the following method steps: A generation of luminescent radiation in the semiconductor structure under a measurement condition A in which there is an electrical voltage V A between the contacts of the semiconductor structure and, for each of a plurality of locations of the semiconductor structure, measurement of a local intensity I LA,i of the luminescent radiation emanating from that location, B generation of luminescent radiation in the semiconductor structure under a measurement condition B in which there is an electrical voltage V B between the contacts of the semiconductor structure and, for each of a plurality of locations, measurement of local intensities I LB,i of the luminescent radiation emanating from that location of the semiconductor structure, wherein in the case of measurement condition B a larger current flows between the contacts of the semiconductor structure than in the case of measurement condition A, C for a plurality of specified locations of the semiconductor structure, determination of a local calibration parameter C V,i for a specified mathematical relationship between the local intensity of the luminescent radiation and the voltage applied locally to the semiconductor element at the location, the determination of the local calibration parameters C V,i being effected at least in dependence upon the intensities I LA,i of the luminescent radiation measured in step A and the voltage V A between the contacts of the semiconductor structure in the case of measurement condition A and D determination of local series resistances R S, i for a plurality of specified locations of the semiconductor structure in each case at least in dependence upon at least one local intensity I LB,i of the luminescent radiation measured in step B and at least one local calibration parameter C V,i determined in step C in such a way that in step D the local series resistances R S, i are each additionally determined in dependence upon a global series resistance R Sg of the semiconductor structure that is identically specified for all local series resistances, characterised in that in step D the local series resistances R S, i are each scaled with a global scaling factor f that is identical for all local series resistances, the global scaling factor f being determined in such a way that the local series resistances R S, i have a specified mathematical relationship to the global series resistance R Sg. A generation of luminescent radiation in the semiconductor structure under a measurement condition A in which there is an electrical voltage V A between the contacts of the semiconductor structure and, for each of a plurality of locations of the semiconductor structure, measurement of a local intensity I LA,i of the luminescent radiation emanating from that location, B generation of luminescent radiation in the semiconductor structure under a measurement condition B in which there is an electrical voltage V B between the contacts of the semiconductor structure and, for each of a plurality of locations, measurement of local intensities I LB,i of the luminescent radiation emanating from that location of the semiconductor structure, wherein in the case of measurement condition B a larger current flows between the contacts of the semiconductor structure than in the case of measurement condition A, C for a plurality of specified locations of the semiconductor structure, determination of a local calibration parameter C V,i for a specified mathematical relationship between the local intensity of the luminescent radiation and the voltage applied locally to the semiconductor element at the location, the determination of the local calibration parameters C V,i being effected at least in dependence upon the intensities I LA,i of the luminescent radiation measured in step A and the voltage V A between the contacts of the semiconductor structure in the case of measurement condition A and D determination of local series resistances R S, i for a plurality of specified locations of the semiconductor structure in each case at least in dependence upon at least one local intensity I LB,i of the luminescent radiation measured in step B and at least one local calibration parameter C V,i determined in step C in such a way that in step D the local series resistances R S, i are each additionally determined in dependence upon a global series resistance R Sg of the semiconductor structure that is identically specified for all local series resistances,