A capacitive touch pattern sensor, comprising: a sensor array comprising a plurality of active pixels, each active pixel in the sensor array comprising: a three-transistor sensor comprising a source follower transistor, a reset transistor in parallel with a detection diode, and an enabling transistor in series with the source follower transistor and a data line (D n), wherein the source of the source follower transistor is connected to the drain of the enabling transistor, wherein the reset transistor responds to a reset signal (G n+1) received at its gate, wherein the data line (D n) is connected to the source of the enabling transistor, and wherein the output of the source follower transistor is tied to the data line (D n) when the enabling transistor is switched on in response to an enabling signal (G n) at its gate; wherein the detection diode coupled in series to a parasitic capacitor at a sensing junction, the parasitic capacitor having its other end at ground, and wherein a cathode of the detection diode and a gate of the source follower transistor are coupled to the sensing junction; and an insulator layer over the sensor array, the insulator layer providing a variable capacitance (C f) to the sensing junctions of underlying active pixels in response to portions of an object being proximate to the insulator layer, the variable capacitance used to detect an image of the object, characterised in that: the source follower transistor has a gate capacitance (C M1) that is the same order of magnitude as: 1) a capacitance value (C p) of the parasitic capacitor and 2) a maximum value of the variable capacitance (C f) provided by the insulator layer, and wherein C M1, C p, and the maximum value of C f are on the order of 10 fF. a three-transistor sensor comprising a source follower transistor, a reset transistor in parallel with a detection diode, and an enabling transistor in series with the source follower transistor and a data line (D n), wherein the source of the source follower transistor is connected to the drain of the enabling transistor, wherein the reset transistor responds to a reset signal (G n+1) received at its gate, wherein the data line (D n) is connected to the source of the enabling transistor, and wherein the output of the source follower transistor is tied to the data line (D n) when the enabling transistor is switched on in response to an enabling signal (G n) at its gate; wherein the detection diode coupled in series to a parasitic capacitor at a sensing junction, the parasitic capacitor having its other end at ground, and wherein a cathode of the detection diode and a gate of the source follower transistor are coupled to the sensing junction; and an insulator layer over the sensor array, the insulator layer providing a variable capacitance (C f) to the sensing junctions of underlying active pixels in response to portions of an object being proximate to the insulator layer, the variable capacitance used to detect an image of the object, characterised in that: the source follower transistor has a gate capacitance (C M1) that is the same order of magnitude as: 1) a capacitance value (C p) of the parasitic capacitor and 2) a maximum value of the variable capacitance (C f) provided by the insulator layer, and wherein C M1, C p, and the maximum value of C f are on the order of 10 fF.