A method of fabricating a bolometer infrared sensor, the method comprising: depositing a first sacrificial layer on a surface of a substrate over a sensor region of the substrate, wherein the substrate includes conductive traces for connecting an absorber structure of the bolometer infrared sensor to control circuitry; patterning the first sacrificial layer to define the absorber structure, wherein anchor holes are etched through the first sacrificial layer; forming a part of the absorber structure for the infrared sensor on top of the first sacrificial layer and forming anchors of the absorber structure in the anchor holes that extend down to the substrate for suspending the absorber structure above the substrate, wherein the anchors electrically connect the absorber structure to the conductive traces; depositing a second sacrificial layer on top of the absorber structure; forming a trench through the first sacrificial layer and the second sacrificial layer, the trench surrounding the sensor region; depositing an encapsulating layer on top of the second sacrificial layer to form an encapsulating thin film and into the trench to form a perimeter wall around the sensing region; forming vent holes in the encapsulating thin film; using the vent holes to remove the first and the second sacrificial layers (18, 28) below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located, the cavity being surrounded by the perimeter wall, the encapsulating thin film being suspended over the cavity and the absorber structure by the perimeter wall; and closing the vent holes in a vacuum environment to seal the absorber structure within the cavity; characterized in that additional trenches shorter than the anchor holes are etched into the first sacrificial layer during the patterning of the first sacrificial layer to add mechanical stability to the part of the absorber structure formed on top of the first sacrificial layer; forming vias through the first and the second sacrificial layers (18, 28) not removed outside the sensor region; and forming bonding pads that are electrically connected to the conductive traces formed on top of the encapsulating thin film outside of the sensing region, wherein the vias are formed for electrically connecting the bonding pads to the conductive traces. depositing a first sacrificial layer on a surface of a substrate over a sensor region of the substrate, wherein the substrate includes conductive traces for connecting an absorber structure of the bolometer infrared sensor to control circuitry; patterning the first sacrificial layer to define the absorber structure, wherein anchor holes are etched through the first sacrificial layer; forming a part of the absorber structure for the infrared sensor on top of the first sacrificial layer and forming anchors of the absorber structure in the anchor holes that extend down to the substrate for suspending the absorber structure above the substrate, wherein the anchors electrically connect the absorber structure to the conductive traces; depositing a second sacrificial layer on top of the absorber structure; forming a trench through the first sacrificial layer and the second sacrificial layer, the trench surrounding the sensor region; depositing an encapsulating layer on top of the second sacrificial layer to form an encapsulating thin film and into the trench to form a perimeter wall around the sensing region; forming vent holes in the encapsulating thin film; using the vent holes to remove the first and the second sacrificial layers (18, 28) below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located, the cavity being surrounded by the perimeter wall, the encapsulating thin film being suspended over the cavity and the absorber structure by the perimeter wall; and closing the vent holes in a vacuum environment to seal the absorber structure within the cavity; characterized in that additional trenches shorter than the anchor holes are etched into the first sacrificial layer during the patterning of the first sacrificial layer to add mechanical stability to the part of the absorber structure formed on top of the first sacrificial layer; forming vias through the first and the second sacrificial layers (18, 28) not removed outside the sensor region; and forming bonding pads that are electrically connected to the conductive traces formed on top of the encapsulating thin film outside of the sensing region, wherein the vias are formed for electrically connecting the bonding pads to the conductive traces.