A method for producing an integrated circuit, comprising the steps of - providing a semiconductor substrate having a first lateral dimension, said semiconductor substrate comprising a first substrate surface and a second substrate surface arranged substantially parallel to the first substrate surface, - producing circuit structures in the semiconductor substrate using lithography process steps, - providing a first flexible film piece having a second lateral dimension, which is greater than the first lateral dimension, and having a recess in the second lateral dimension, wherein the flexible film piece has a first film piece surface and a second film piece surface arranged substantially parallel to the first film piece surface, - arranging the semiconductor substrate and the first flexible film piece on a planar holding body, the semiconductor substrate being arranged in the recess, - encapsulating the second substrate surface and the second film piece surface with a potting material to form a combined film chip, - detaching the film chip from the common holding body and - producing a patterned layer of an electrically conductive material above the semiconductor substrate and the first flexible film piece using lithography process steps, wherein the patterned layer extends from the semiconductor substrate up to the first flexible film piece and forms a number of electrically conductive contact tracks between the semiconductor substrate and the first film piece, characterized in that the first substrate surface and the first film piece surface are arranged in plane-parallel fashion on the common holding body in order to orient the first substrate surface and the first film piece surface in plane-parallel fashion wherein the combined film chip is detached from the holding body so that the plane-parallel surfaces (28, 32) of the semiconductor substrate and the first flexible film piece are directly accessible, and wherein the patterned layer is directly arranged on the mutually aligned surfaces (28, 32), with the semiconductor substrate and the film piece being electrically connected to one another without contact holes. - providing a semiconductor substrate having a first lateral dimension, said semiconductor substrate comprising a first substrate surface and a second substrate surface arranged substantially parallel to the first substrate surface, - producing circuit structures in the semiconductor substrate using lithography process steps, - providing a first flexible film piece having a second lateral dimension, which is greater than the first lateral dimension, and having a recess in the second lateral dimension, wherein the flexible film piece has a first film piece surface and a second film piece surface arranged substantially parallel to the first film piece surface, - arranging the semiconductor substrate and the first flexible film piece on a planar holding body, the semiconductor substrate being arranged in the recess, - encapsulating the second substrate surface and the second film piece surface with a potting material to form a combined film chip, - detaching the film chip from the common holding body and - producing a patterned layer of an electrically conductive material above the semiconductor substrate and the first flexible film piece using lithography process steps,