A method of manufacturing an organic field effect transistor, comprising: - providing a layered device structure, the layered device structure comprising a plurality of electrodes and an electronically active region being provided in electrical contact with at least one of the plurality of electrodes, said providing of the layered device structure comprising steps of - on a substrate providing a gate electrode layer covered by a gate insulator layer, - providing an organic semiconducting layer on the gate insulator layer, - applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, wherein, for the applying the structuring layer, a photo lithographic process is used, comprising: - depositing a photo resist cover (104, 105) on the organic semiconducting layer, and - structuring the photo resist cover (104, 105) said structuring comprising steps of illuminating and removing the photo resist cover (104, 105) thereby at least partially removing the photo resist cover (104, 105) in at least the first region, but not the second region, - applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material in the first region and the second region, and - depositing an electrode material on the contact improving layer in the first region and the second region, characterized by - removing the structuring layer at least in the second region by a lift-off process, the lift-off process comprising removing the photo resist cover (104, 105), the contact improving layer and the deposited electrode material in a single step, thereby, in the first region, providing a structured electrode layer providing a drain electrode and a source electrode made of the electrode material. - providing a layered device structure, the layered device structure comprising a plurality of electrodes and an electronically active region being provided in electrical contact with at least one of the plurality of electrodes, said providing of the layered device structure comprising steps of - on a substrate providing a gate electrode layer covered by a gate insulator layer, - providing an organic semiconducting layer on the gate insulator layer, - applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, wherein, for the applying the structuring layer, a photo lithographic process is used, comprising: - depositing a photo resist cover (104, 105) on the organic semiconducting layer, and - structuring the photo resist cover (104, 105) said structuring comprising steps of illuminating and removing the photo resist cover (104, 105) thereby at least partially removing the photo resist cover (104, 105) in at least the first region, but not the second region, - applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material in the first region and the second region, and - depositing an electrode material on the contact improving layer in the first region and the second region, characterized by - removing the structuring layer at least in the second region by a lift-off process, the lift-off process comprising removing the photo resist cover (104, 105), the contact improving layer and the deposited electrode material in a single step, thereby, in the first region, providing a structured electrode layer providing a drain electrode and a source electrode made of the electrode material. - on a substrate providing a gate electrode layer covered by a gate insulator layer, - providing an organic semiconducting layer on the gate insulator layer, - applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, wherein, for the applying the structuring layer, a photo lithographic process is used, comprising: - depositing a photo resist cover (104, 105) on the organic semiconducting layer, and - structuring the photo resist cover (104, 105) said structuring comprising steps of illuminating and removing the photo resist cover (104, 105) thereby at least partially removing the photo resist cover (104, 105) in at least the first region, but not the second region, - depositing a photo resist cover (104, 105) on the organic semiconducting layer, and - structuring the photo resist cover (104, 105) said structuring comprising steps of illuminating and removing the photo resist cover (104, 105) thereby at least partially removing the photo resist cover (104, 105) in at least the first region, but not the second region, - applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material in the first region and the second region, and - depositing an electrode material on the contact improving layer in the first region and the second region, characterized by - removing the structuring layer at least in the second region by a lift-off process, the lift-off process comprising removing the photo resist cover (104, 105), the contact improving layer and the deposited electrode material in a single step, thereby, in the first region, providing a structured electrode layer providing a drain electrode and a source electrode made of the electrode material.