A triode-structured field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, which arc parallel and adapted in the size, wherein: a number of strip-like anode conducting layer are arranged on the anode-gate substrate at intervals and side by side, bus electrodes are arranged on the anode conducting layer along the longitudinal direction at intervals, an under-gate dielectric layer is arranged on the anode-gate substrate, the under-gate dielectric layer is composed of a number of longitudinal strips at intervals and a number of lateral branch strips which are arranged on one side or both sides of the longitudinal strips at intervals, the longitudinal strips are parallel to anode conducting layer and are arranged on the part of the anode-gate substrate that is not covered by the anode conducting layer, strip-like gate conducting layer and dielectric layer for gate protection are arranged ordinal on the longitudinal strips, the literal branch strips are arranged on the anode conducting layer along the longitudinal direction at intervals, phosphor layer is arranged on the part of the anode-gate substrate that is not covered by the lateral branch strips and the bus electrodes; a number of strip-like cathode conducting layers are arranged on the cathode substrate at intervals, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating on the cathode conducting layer along the longitudinal direction, election emitters are respectively arranged on the resistor layer for current limiting; the strip-like anode conducting layer any strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate substrate and the cathode substrate, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to one side of the dielectric layer for cathode protection. a number of strip-like anode conducting layer are arranged on the anode-gate substrate at intervals and side by side, bus electrodes are arranged on the anode conducting layer along the longitudinal direction at intervals, an under-gate dielectric layer is arranged on the anode-gate substrate, the under-gate dielectric layer is composed of a number of longitudinal strips at intervals and a number of lateral branch strips which are arranged on one side or both sides of the longitudinal strips at intervals, the longitudinal strips are parallel to anode conducting layer and are arranged on the part of the anode-gate substrate that is not covered by the anode conducting layer, strip-like gate conducting layer and dielectric layer for gate protection are arranged ordinal on the longitudinal strips, the literal branch strips are arranged on the anode conducting layer along the longitudinal direction at intervals, phosphor layer is arranged on the part of the anode-gate substrate that is not covered by the lateral branch strips and the bus electrodes; a number of strip-like cathode conducting layers are arranged on the cathode substrate at intervals, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating on the cathode conducting layer along the longitudinal direction, election emitters are respectively arranged on the resistor layer for current limiting; the strip-like anode conducting layer any strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate substrate and the cathode substrate, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to one side of the dielectric layer for cathode protection.