A method of producing a multilayer magnetoelectronic device, the method comprising: depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment, wherein each two adjacent ferromagnetic layers of the at least two ferromagnetic layers are separated by a respective nonmagnetic layer, and wherein each of the ferromagnetic layers is deposited at a respective azimuthal angle with respect to a reference direction extending in the plane of extension of the respective ferromagnetic layer and at a nonzero angle of incidence with respect to a direction perpendicular to the plane of extension of the respective ferromagnetic layer, such that the respective ferromagnetic layer exhibits uniaxial magnetic anisotropy, characterized in that - a magnetization curve is specified for the magnetoelectronic device to be produced, - the number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined, - for each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer, and - finally the step of depositing the multilayer structure is carried out using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers. depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment, wherein each two adjacent ferromagnetic layers of the at least two ferromagnetic layers are separated by a respective nonmagnetic layer, and wherein each of the ferromagnetic layers is deposited at a respective azimuthal angle with respect to a reference direction extending in the plane of extension of the respective ferromagnetic layer and at a nonzero angle of incidence with respect to a direction perpendicular to the plane of extension of the respective ferromagnetic layer, such that the respective ferromagnetic layer exhibits uniaxial magnetic anisotropy, characterized in that - a magnetization curve is specified for the magnetoelectronic device to be produced, - the number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined, - for each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer, and - finally the step of depositing the multilayer structure is carried out using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers. - a magnetization curve is specified for the magnetoelectronic device to be produced, - the number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined, - for each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer, and - finally the step of depositing the multilayer structure is carried out using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.