A semiconductor device (200, 800), comprising: a semiconductor substrate (210, 810) having a first conductivity type and a top substrate surface (212, 812); a buried layer (220, 820) below the top substrate surface (212, 812), wherein the buried layer has a second conductivity type that is different from the first conductivity type; a sinker region (222, 822) between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; an active device in the semiconductor substrate within a portion (230, 830) of the substrate contained by the isolation structure, wherein the active device includes a drift region (232, 832) within a central portion of an active area (230, 830) and extending from the top substrate surface into the semiconductor substrate, the drift region (232, 832) extending into the semiconductor substrate (210, 810) to a depth that is less than the depth of the buried layer (220, 820), a body region (234, 834) extending from the top substrate surface into the semiconductor substrate (210, 810), and positioned between the drift region and the sinker region, a source region (238, 838) formed in the body region (234, 834), wherein the source region has an opposite conductivity type from the body region, and a drain region (236, 836) formed in the drift region, wherein the drain region has a same conductivity type as the drift region, the drain region (236, 836) being more heavily doped than the drift region (232, 832) and extending into the substrate (210, 810) to a depth significantly less than the depth of the drift region (232, 832); and a resistor circuit connected between the isolation structure and a current carrying region selected from the source region (238, 838) and the drain region (236, 836), wherein the resistor circuit includes a resistive network and a Schottky diode (410, 510, 1010, 1110) coupled in series between the isolation structure and the current carrying region, wherein the resistive network has a resistance in a range of 10 to 500 ohms; wherein the Schottky diode (410, 510, 1010, 1110) is formed from a Schottky contact coupled with the isolation structure. a semiconductor substrate (210, 810) having a first conductivity type and a top substrate surface (212, 812); a buried layer (220, 820) below the top substrate surface (212, 812), wherein the buried layer has a second conductivity type that is different from the first conductivity type; a sinker region (222, 822) between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; an active device in the semiconductor substrate within a portion (230, 830) of the substrate contained by the isolation structure, wherein the active device includes a drift region (232, 832) within a central portion of an active area (230, 830) and extending from the top substrate surface into the semiconductor substrate, the drift region (232, 832) extending into the semiconductor substrate (210, 810) to a depth that is less than the depth of the buried layer (220, 820), a body region (234, 834) extending from the top substrate surface into the semiconductor substrate (210, 810), and positioned between the drift region and the sinker region, a source region (238, 838) formed in the body region (234, 834), wherein the source region has an opposite conductivity type from the body region, and a drain region (236, 836) formed in the drift region, wherein the drain region has a same conductivity type as the drift region, the drain region (236, 836) being more heavily doped than the drift region (232, 832) and extending into the substrate (210, 810) to a depth significantly less than the depth of the drift region (232, 832); and a drift region (232, 832) within a central portion of an active area (230, 830) and extending from the top substrate surface into the semiconductor substrate, the drift region (232, 832) extending into the semiconductor substrate (210, 810) to a depth that is less than the depth of the buried layer (220, 820), a body region (234, 834) extending from the top substrate surface into the semiconductor substrate (210, 810), and positioned between the drift region and the sinker region, a source region (238, 838) formed in the body region (234, 834), wherein the source region has an opposite conductivity type from the body region, and a drain region (236, 836) formed in the drift region, wherein the drain region has a same conductivity type as the drift region, the drain region (236, 836) being more heavily doped than the drift region (232, 832) and extending into the substrate (210, 810) to a depth significantly less than the depth of the drift region (232, 832); and a resistor circuit connected between the isolation structure and a current carrying region selected from the source region (238, 838) and the drain region (236, 836), wherein the resistor circuit includes a resistive network and a Schottky diode (410, 510, 1010, 1110) coupled in series between the isolation structure and the current carrying region, wherein the resistive network has a resistance in a range of 10 to 500 ohms; wherein the Schottky diode (410, 510, 1010, 1110) is formed from a Schottky contact coupled with the isolation structure.