A method for manufacturing a semiconductor device in which a lifetime of carriers is locally controlled, wherein the semiconductor device is a pin diode, the method comprising: forming an n - -type semiconductor substrate to be an n - -type drift layer, the semiconductor substrate having a front surface and a rear surface and having a cathode side and an anode side, the cathode side being closer to the rear surface of the semiconductor substrate than the anode side; forming a p-type anode layer on the front surface of the semiconductor substrate; performing electron beam irradiation from the front surface side of the semiconductor substrate so as to form defects, which are formed throughout the semiconductor substrate by dangling bonds generated by breaking of inter-atomic bonds of Si atoms constituting the semiconductor substrate by the electron beam irradiation; forming an n + -type cathode layer on the rear surface of the semiconductor substrate; characterized in that the method further comprises: simultaneously performing n-type impurity ion implantation and hydrogen ion implantation from the rear surface of the semiconductor substrate and thereby forming the n + -type cathode layer and a hydrogen implanted region, wherein: in the hydrogen implanted region a first concentration peak of hydrogen molecules and a second concentration peak of hydrogen atoms are formed with the second concentration peak being formed in a deeper portion from the rear surface of the semiconductor substrate than the first concentration peak; the first concentration peak and the second concentration peak are formed in deeper positions from the rear surface of the semiconductor substrate than a concentration peak of the n-type impurity of the cathode layer; the first concentration peak and the second concentration peak are formed to overlap with each other; and defects on the cathode side are locally recovered in the hydrogen implanted region by hydrogen terminating the dangling bonds. forming an n - -type semiconductor substrate to be an n - -type drift layer, the semiconductor substrate having a front surface and a rear surface and having a cathode side and an anode side, the cathode side being closer to the rear surface of the semiconductor substrate than the anode side; forming a p-type anode layer on the front surface of the semiconductor substrate; performing electron beam irradiation from the front surface side of the semiconductor substrate so as to form defects, which are formed throughout the semiconductor substrate by dangling bonds generated by breaking of inter-atomic bonds of Si atoms constituting the semiconductor substrate by the electron beam irradiation; forming an n + -type cathode layer on the rear surface of the semiconductor substrate; characterized in that the method further comprises: simultaneously performing n-type impurity ion implantation and hydrogen ion implantation from the rear surface of the semiconductor substrate and thereby forming the n + -type cathode layer and a hydrogen implanted region, wherein: in the hydrogen implanted region a first concentration peak of hydrogen molecules and a second concentration peak of hydrogen atoms are formed with the second concentration peak being formed in a deeper portion from the rear surface of the semiconductor substrate than the first concentration peak; the first concentration peak and the second concentration peak are formed in deeper positions from the rear surface of the semiconductor substrate than a concentration peak of the n-type impurity of the cathode layer; the first concentration peak and the second concentration peak are formed to overlap with each other; and defects on the cathode side are locally recovered in the hydrogen implanted region by hydrogen terminating the dangling bonds. in the hydrogen implanted region a first concentration peak of hydrogen molecules and a second concentration peak of hydrogen atoms are formed with the second concentration peak being formed in a deeper portion from the rear surface of the semiconductor substrate than the first concentration peak; the first concentration peak and the second concentration peak are formed in deeper positions from the rear surface of the semiconductor substrate than a concentration peak of the n-type impurity of the cathode layer; the first concentration peak and the second concentration peak are formed to overlap with each other; and defects on the cathode side are locally recovered in the hydrogen implanted region by hydrogen terminating the dangling bonds.