An imaging device, comprising: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including a first electrode, a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including: a second photoelectric converter above the semiconductor substrate, including a third electrode, a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein an area of the second electrode is greater than an area of the fourth electrode, both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in a plan view, and characterized in that neither the first charge accumulation region nor the second charge accumulation region overlap with the fourth electrode in the plan view. a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including a first electrode, a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a first photoelectric converter above the semiconductor substrate, including a first electrode, a second electrode facing the first electrode, and a first photoelectric conversion layer between the first electrode and the second electrode, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including: a second photoelectric converter above the semiconductor substrate, including a third electrode, a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein a second photoelectric converter above the semiconductor substrate, including a third electrode, a fourth electrode facing the third electrode, and a second photoelectric conversion layer between the third electrode and the fourth electrode, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode, wherein an area of the second electrode is greater than an area of the fourth electrode, both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in a plan view, and characterized in that neither the first charge accumulation region nor the second charge accumulation region overlap with the fourth electrode in the plan view.