A cleaning apparatus (1, 41) for a component of a semiconductor production apparatus on which a semiconductor is attached, wherein the cleaning apparatus (1, 41) comprises: a cleaning processing furnace (2, 42) which is configured to house the component of a semiconductor production apparatus; a heating device (3, 43) which is configured to heat the component of a semiconductor production apparatus in the cleaning processing furnace (2, 42); a decompression device which is configured to evacuate the inside of the cleaning processing furnace (2, 42); a gas introduction pipe (4, 44) which is configured to introduce a cleaning gas capable of reacting with the semiconductor into the cleaning processing furnace (2, 42); a gas discharge pipe which is configured to discharge a reaction product of the semiconductor and the cleaning gas from the cleaning processing furnace (2, 42); a first temperature control device which is configured to maintain a temperature of an inner surface of the cleaning processing furnace (2, 42) within a required temperature range; and a second temperature control device which is configured to maintain a temperature inside of the gas discharge pipe within a required temperature range; wherein the cleaning processing furnace (2, 42) comprises a reaction tube (11, 51) which is made of quartz and has an opening at at least a first end, and a first flange (13, 53) which is made of metal and configured to close the opening; wherein the first temperature control device comprises a plurality of temperature control mechanisms (16, 17) which are configured to independently control a temperature of a corresponding plurality of portions at the surface of the cleaning processing furnace (2, 42) in the reaction tube (11, 51) and the flange (13, 53). a cleaning processing furnace (2, 42) which is configured to house the component of a semiconductor production apparatus; a heating device (3, 43) which is configured to heat the component of a semiconductor production apparatus in the cleaning processing furnace (2, 42); a decompression device which is configured to evacuate the inside of the cleaning processing furnace (2, 42); a gas introduction pipe (4, 44) which is configured to introduce a cleaning gas capable of reacting with the semiconductor into the cleaning processing furnace (2, 42); a gas discharge pipe which is configured to discharge a reaction product of the semiconductor and the cleaning gas from the cleaning processing furnace (2, 42); a first temperature control device which is configured to maintain a temperature of an inner surface of the cleaning processing furnace (2, 42) within a required temperature range; and a second temperature control device which is configured to maintain a temperature inside of the gas discharge pipe within a required temperature range; wherein the cleaning processing furnace (2, 42) comprises a reaction tube (11, 51) which is made of quartz and has an opening at at least a first end, and a first flange (13, 53) which is made of metal and configured to close the opening; wherein the first temperature control device comprises a plurality of temperature control mechanisms (16, 17) which are configured to independently control a temperature of a corresponding plurality of portions at the surface of the cleaning processing furnace (2, 42) in the reaction tube (11, 51) and the flange (13, 53).