A manufacturing method of a field stop reverse conducting insulated gate bipolar transistor, comprising the following steps: step A, providing an N-type substrate, regarding a side of the substrate as a back side, forming an N-type field stop layer at the back side; step B, performing a first phase front side process; which comprising forming a high voltage-resisting structure in a terminal structure peripheral to a front side of the substrate of the field stop reverse conducting insulated gate bipolar transistor, forming a gate oxide layer at a front surface of a substrate of a active region area surrounded by the terminal structure, and forming a polysilicon gate at a surface of the gate oxide layer, forming a P well in the active region area at the front side of the substrate, forming an N-type emitter in the P well, forming a silicon oxide (7, 14) layer covering the front side of the substrate and the polysilicon gate; step C, forming a back side P-type structure at a side of the field stop layer away from the substrate; step D, performing a second phase front side process; which comprising photoetching and etching the silicon oxide layer, forming a contact hole having a part of the P well and the emitter exposing, filling an emitter metal structure in the contact hole, forming a passivation layer covering the silicon oxide layer and the emitter metal structure; and step E, forming a plurality of notches in the active region area through the back side P-type structure into the field stop layer, and forming a back side metal layer, wherein the back side metal layer is filled in the plurality of notches to form a metal structure extending in the field stop layer, the plurality of notches and the metal structure extending into the field stop layer are not disposed in the terminal structure, wherein, prior to the step C, the method further comprises a step of forming a front side protecting layer on the silicon oxide layer; after the step C and prior to the step D, the method further comprises a step of removing the front side protecting layer. step A, providing an N-type substrate, regarding a side of the substrate as a back side, forming an N-type field stop layer at the back side; step B, performing a first phase front side process; which comprising forming a high voltage-resisting structure in a terminal structure peripheral to a front side of the substrate of the field stop reverse conducting insulated gate bipolar transistor, forming a gate oxide layer at a front surface of a substrate of a active region area surrounded by the terminal structure, and forming a polysilicon gate at a surface of the gate oxide layer, forming a P well in the active region area at the front side of the substrate, forming an N-type emitter in the P well, forming a silicon oxide (7, 14) layer covering the front side of the substrate and the polysilicon gate; step C, forming a back side P-type structure at a side of the field stop layer away from the substrate; step D, performing a second phase front side process; which comprising photoetching and etching the silicon oxide layer, forming a contact hole having a part of the P well and the emitter exposing, filling an emitter metal structure in the contact hole, forming a passivation layer covering the silicon oxide layer and the emitter metal structure; and step E, forming a plurality of notches in the active region area through the back side P-type structure into the field stop layer, and forming a back side metal layer, wherein the back side metal layer is filled in the plurality of notches to form a metal structure extending in the field stop layer, the plurality of notches and the metal structure extending into the field stop layer are not disposed in the terminal structure, wherein, prior to the step C, the method further comprises a step of forming a front side protecting layer on the silicon oxide layer; after the step C and prior to the step D, the method further comprises a step of removing the front side protecting layer.