A detector system for x-ray imaging, said detector system comprising a detector having a plurality of adjacent edge-on detector modules, an anti-scatter collimator and one or more anti-scatter foils, wherein: - each of said edge-on detector modules comprises a first edge that is adapted to be oriented towards an x-ray source and a front-side running essentially parallel to the direction of incoming x-rays, said front-side comprising at least one charge collecting electrode and routing traces connecting the charge collecting electrode with front-end electronics; and - at least a subset of said plurality of adjacent edge-on detector modules being pairwise arranged, front-side to front-side, whereby a front-side to front-side gap is defined between the front-sides of said pairwise arranged adjacent edge-on detector modules; and wherein - said pairwise arranged adjacent edge-on detector modules are associated with said anti-scatter collimator arranged in the x-ray path between said x-ray source and said edge-on detector modules and overlapping said front-side to front-side gap, said anti-scatter collimator is arranged so that the front side volume of the pairwise arranged adjacent edge-on detector modules is protected against directly incoming x-rays; and - said pairwise arranged adjacent edge-on detector modules have an anti-scatter foil located in said front-side to front-side gap; wherein said edge-on detector modules comprises edge-on detector modules of a semiconductor material; wherein the backside of at least one edge-on detector module of said pairwise arranged edge-on detector modules is arranged to face the backside of a corresponding edge-on detector module in such a way that a back-side to back-side gap is formed between said edge-on detector module and said corresponding edge-on detector module, said detector system being characterized in that said back-side to back-side gap comprises an attenuating material; wherein said attenuating material comprises a material having similar attenuation characteristics as the semiconductor material used for the detector modules. - each of said edge-on detector modules comprises a first edge that is adapted to be oriented towards an x-ray source and a front-side running essentially parallel to the direction of incoming x-rays, said front-side comprising at least one charge collecting electrode and routing traces connecting the charge collecting electrode with front-end electronics; and - at least a subset of said plurality of adjacent edge-on detector modules being pairwise arranged, front-side to front-side, whereby a front-side to front-side gap is defined between the front-sides of said pairwise arranged adjacent edge-on detector modules; and wherein - said pairwise arranged adjacent edge-on detector modules are associated with said anti-scatter collimator arranged in the x-ray path between said x-ray source and said edge-on detector modules and overlapping said front-side to front-side gap, said anti-scatter collimator is arranged so that the front side volume of the pairwise arranged adjacent edge-on detector modules is protected against directly incoming x-rays; and - said pairwise arranged adjacent edge-on detector modules have an anti-scatter foil located in said front-side to front-side gap; wherein said edge-on detector modules comprises edge-on detector modules of a semiconductor material; wherein the backside of at least one edge-on detector module of said pairwise arranged edge-on detector modules is arranged to face the backside of a corresponding edge-on detector module in such a way that a back-side to back-side gap is formed between said edge-on detector module and said corresponding edge-on detector module, said detector system being characterized in that said back-side to back-side gap comprises an attenuating material; wherein said attenuating material comprises a material having similar attenuation characteristics as the semiconductor material used for the detector modules. wherein said edge-on detector modules comprises edge-on detector modules of a semiconductor material; wherein the backside of at least one edge-on detector module of said pairwise arranged edge-on detector modules is arranged to face the backside of a corresponding edge-on detector module in such a way that a back-side to back-side gap is formed between said edge-on detector module and said corresponding edge-on detector module, said detector system being characterized in that said back-side to back-side gap comprises an attenuating material; wherein said attenuating material comprises a material having similar attenuation characteristics as the semiconductor material used for the detector modules.