A textile auxiliary agent for IR absorption and/or reflection in textiles, containing (α) semiconductors selected from at least one of the semiconductors of groups a), b) and c), and further at least one semiconductor from group d), or mixtures of at least two semiconductors selected from groups a), b) and c), especially at least one from group a) and at least one of group c), wherein a) includes A III B V semiconductor compounds of the binary type, wherein A represents gallium, indium, thallium, germanium, tin, lead, and B represents nitrogen, phosphorus, arsenic, antimony and bismuth in any stoichiometric ratios, b) includes elemental semiconductors selected from allotropes of tin, indium, carbon, silicon and germanium, c) includes polypyrrole, polyaniline, polyparaphenylene, polythiophene, poly(4,4-dioctylcyclopentadithiophene), poly(3,4-ethylenedioxythiophene) or poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate), d) includes a semiconductor from the group of indium tin oxide, antimony tin oxide, aluminum zinc oxide, magnesium zinc oxide, fluorine-doped tin oxide or mixtures of the binary oxides of these mentioned metals, (β) one or more binder polymers from the group of polyurethanes, polyacrylates, styrene-butadienes, silicones, siloxanes, sol-gels, polyvinyl chloride, ethylvinyl acetate, epoxy or polyester resins, (γ) surface-active substances selected from the group of anion-active, cation-active or non-ionic surfactants, and (δ) solvents and/or other dispersing aids. (α) semiconductors selected from at least one of the semiconductors of groups a), b) and c), and further at least one semiconductor from group d), or mixtures of at least two semiconductors selected from groups a), b) and c), especially at least one from group a) and at least one of group c), wherein a) includes A III B V semiconductor compounds of the binary type, wherein A represents gallium, indium, thallium, germanium, tin, lead, and B represents nitrogen, phosphorus, arsenic, antimony and bismuth in any stoichiometric ratios, b) includes elemental semiconductors selected from allotropes of tin, indium, carbon, silicon and germanium, c) includes polypyrrole, polyaniline, polyparaphenylene, polythiophene, poly(4,4-dioctylcyclopentadithiophene), poly(3,4-ethylenedioxythiophene) or poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate), d) includes a semiconductor from the group of indium tin oxide, antimony tin oxide, aluminum zinc oxide, magnesium zinc oxide, fluorine-doped tin oxide or mixtures of the binary oxides of these mentioned metals, a) includes A III B V semiconductor compounds of the binary type, wherein A represents gallium, indium, thallium, germanium, tin, lead, and B represents nitrogen, phosphorus, arsenic, antimony and bismuth in any stoichiometric ratios, b) includes elemental semiconductors selected from allotropes of tin, indium, carbon, silicon and germanium, c) includes polypyrrole, polyaniline, polyparaphenylene, polythiophene, poly(4,4-dioctylcyclopentadithiophene), poly(3,4-ethylenedioxythiophene) or poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate), d) includes a semiconductor from the group of indium tin oxide, antimony tin oxide, aluminum zinc oxide, magnesium zinc oxide, fluorine-doped tin oxide or mixtures of the binary oxides of these mentioned metals, (β) one or more binder polymers from the group of polyurethanes, polyacrylates, styrene-butadienes, silicones, siloxanes, sol-gels, polyvinyl chloride, ethylvinyl acetate, epoxy or polyester resins, (γ) surface-active substances selected from the group of anion-active, cation-active or non-ionic surfactants, and (δ) solvents and/or other dispersing aids.