A solar powered generator (100; 200) comprising: a solar panel having a top side and a bottom side and being configured to generate electric power from sunlight; a thermoelectric device adjacent to and below the solar panel, the thermoelectric device comprising a hot junction and a cold junction; wherein the hot junction is in close thermal coupling with the bottom side of the solar panel; and wherein the thermoelectric device is configured to generate electric power when the hot junction is hotter than the cold junction; one or more electrical connections configured to electrically couple to and draw electrical power from the solar panel and configured to electrically couple to and draw electrical power from the thermoelectric device; a solar concentration system configured to concentrate sunlight onto the top of the solar panel, the system having a maximum solar concentration factor f; wherein the thermoelectric device comprises n-type legs configured to conduct heat from the hot junction to the cold junction and p-type legs configured to conduct heat from the hot junction to the cold junction; wherein the thermoelectric device has an average thermal resistivity κ through a height h of the n-type legs and of the p-type legs; wherein the average thermal resistivity κ is a thermal resistivity between the hot and the cold junction (107, 108); wherein the height h depends on a target temperature differential ΔT, the average thermal resistivity κ and the maximum solar concentration factor f according to h = Δ ⁢ T/ f ∗ K ∗ 1.3 kW/m 2; and wherein the n-type legs comprise one or more segments of n-doped semiconductor materials; wherein the p-type legs comprise one or more segments of p-doped semiconductor materials; wherein at least one of the segments is formed of a nano-composite material in which quantum confinement of carriers substantially reduces the segment's thermal conductivity; and wherein the height of the n-type legs and of the p-type legs in relation to the maximum solar concentration factor f and the average thermal resistivity κ is great enough that sunlight incident on the solar concentration system with an intensity of 1.3 kW/m 2 is operative to heat the solar panel to temperatures in excess of 302 °C with the ambient temperature at 27 °C and with the cold junction maintained at 100 °C. a solar panel having a top side and a bottom side and being configured to generate electric power from sunlight; a thermoelectric device adjacent to and below the solar panel, the thermoelectric device comprising a hot junction and a cold junction; wherein the hot junction is in close thermal coupling with the bottom side of the solar panel; and wherein the thermoelectric device is configured to generate electric power when the hot junction is hotter than the cold junction; one or more electrical connections configured to electrically couple to and draw electrical power from the solar panel and configured to electrically couple to and draw electrical power from the thermoelectric device; a solar concentration system configured to concentrate sunlight onto the top of the solar panel, the system having a maximum solar concentration factor f; wherein the thermoelectric device comprises n-type legs configured to conduct heat from the hot junction to the cold junction and p-type legs configured to conduct heat from the hot junction to the cold junction; wherein the thermoelectric device has an average thermal resistivity κ through a height h of the n-type legs and of the p-type legs; wherein the average thermal resistivity κ is a thermal resistivity between the hot and the cold junction (107, 108); wherein the height h depends on a target temperature differential ΔT, the average thermal resistivity κ and the maximum solar concentration factor f according to h = Δ ⁢ T/ f ∗ K ∗ 1.3 kW/m 2; and wherein the n-type legs comprise one or more segments of n-doped semiconductor materials; wherein the p-type legs comprise one or more segments of p-doped semiconductor materials; wherein at least one of the segments is formed of a nano-composite material in which quantum confinement of carriers substantially reduces the segment's thermal conductivity; and wherein the height of the n-type legs and of the p-type legs in relation to the maximum solar concentration factor f and the average thermal resistivity κ is great enough that sunlight incident on the solar concentration system with an intensity of 1.3 kW/m 2 is operative to heat the solar panel to temperatures in excess of 302 °C with the ambient temperature at 27 °C and with the cold junction maintained at 100 °C.