A method of forming a hybridized device comprising: ▪ forming a first microelectronic component provided on a surface with metal bumps, and a second microelectronic component provided on a surface with connection elements (40; 40, 42; 36; 36, 42) corresponding to said metal bumps; ▪ placing the bumps of the first microelectronic component into contact with the connection elements (40; 40, 42; 36; 36, 42) of the second microelectronic component; and ▪ attaching the bumps to the connection elements (40; 40, 42; 36; 36, 42); in which the manufacturing of the second microelectronic component comprises: ∘ forming a substrate; ∘ forming, on a surface of the substrate, resistive elements at the locations provided for the connection elements (40; 40, 42; 36; 36, 42); ∘ depositing an electric insulator layer at least on the resistive elements; and ∘ forming the connection elements (40; 40, 42), each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper; and in which the attachment of the bumps to the connection elements (40; 40, 42; 36; 36, 42) comprises applying an electric current through the resistive elements to heat the bumps; characterized in that the manufacturing of the metal well comprises: • forming a metal area on the electric insulator layer, said metal area being made of a material provided with a thermal expansion coefficient superior than that of the material constituting the electric insulator layer, and • cutting with a laser an opening in said metal area. ▪ forming a first microelectronic component provided on a surface with metal bumps, and a second microelectronic component provided on a surface with connection elements (40; 40, 42; 36; 36, 42) corresponding to said metal bumps; ▪ placing the bumps of the first microelectronic component into contact with the connection elements (40; 40, 42; 36; 36, 42) of the second microelectronic component; and ▪ attaching the bumps to the connection elements (40; 40, 42; 36; 36, 42); in which the manufacturing of the second microelectronic component comprises: ∘ forming a substrate; ∘ forming, on a surface of the substrate, resistive elements at the locations provided for the connection elements (40; 40, 42; 36; 36, 42); ∘ depositing an electric insulator layer at least on the resistive elements; and ∘ forming the connection elements (40; 40, 42), each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper; and in which the attachment of the bumps to the connection elements (40; 40, 42; 36; 36, 42) comprises applying an electric current through the resistive elements to heat the bumps; characterized in that the manufacturing of the metal well comprises: ∘ forming a substrate; ∘ forming, on a surface of the substrate, resistive elements at the locations provided for the connection elements (40; 40, 42; 36; 36, 42); ∘ depositing an electric insulator layer at least on the resistive elements; and ∘ forming the connection elements (40; 40, 42), each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper; • forming a metal area on the electric insulator layer, said metal area being made of a material provided with a thermal expansion coefficient superior than that of the material constituting the electric insulator layer, and • cutting with a laser an opening in said metal area.