mhurhangee/ep-ind-claims huggingface dataset:
An abrasive composition comprising: an organic solvent present in an amount of 1 to 70 percent by weight relative to the overall weight of the abrasive composition; a nonionic surfactant comprising a block copolymer of polypropylene oxide and polyethylene oxide, wherein the block copolymer is an ABA triblock copolymer represented by polyethylene oxide- block -polypropylene oxide- block -polyethylene oxide, wherein the polypropylene oxide block represents at least 60 percent based on the overall weight of the triblock copolymer, and wherein the block copolymer is present in an amount of 0.1 to 10 percent by weight relative to the overall weight of the abrasive composition; a particulate abrasive comprising diatomaceous earth, tripoli, silica powder, alumina abrasive, colloidal silica, synthetic silica, silicon carbide, and mixtures thereof; water present in an amount of 20 to 90 percent by weight relative to the overall weight of the abrasive composition; and a co-surfactant present in an amount of 0.1 to 25% by weight relative to the overall weight of the composition, the co-surfactant enabling the abrasive composition to form a stable oil-in-water emulsion in combination with the remaining components of the abrasive composition, wherein the nonionic surfactant has a hydrophilic-lipophilic balance ranging from 1 to 7 and wherein the co-surfactant has a hydrophilic-lipophilic balance ranging from 10 to 20. an organic solvent present in an amount of 1 to 70 percent by weight relative to the overall weight of the abrasive composition; a nonionic surfactant comprising a block copolymer of polypropylene oxide and polyethylene oxide, wherein the block copolymer is an ABA triblock copolymer represented by polyethylene oxide- block -polypropylene oxide- block -polyethylene oxide, wherein the polypropylene oxide block represents at least 60 percent based on the overall weight of the triblock copolymer, and wherein the block copolymer is present in an amount of 0.1 to 10 percent by weight relative to the overall weight of the abrasive composition; a particulate abrasive comprising diatomaceous earth, tripoli, silica powder, alumina abrasive, colloidal silica, synthetic silica, silicon carbide, and mixtures thereof; water present in an amount of 20 to 90 percent by weight relative to the overall weight of the abrasive composition; and a co-surfactant present in an amount of 0.1 to 25% by weight relative to the overall weight of the composition, the co-surfactant enabling the abrasive composition to form a stable oil-in-water emulsion in combination with the remaining components of the abrasive composition, wherein the nonionic surfactant has a hydrophilic-lipophilic balance ranging from 1 to 7 and wherein the co-surfactant has a hydrophilic-lipophilic balance ranging from 10 to 20.
A high-temperature superconductor layer arrangement comprising at least one support material and a textured buffered layer which is composed of oxidic material and allows textured growing-on of a high-temperature superconductor (HTSL) layer, where the support material is textured and consists of a suitable metal or an alloy and the buffer layer comprises at least one further constituent which forms a homogeneous mixed crystal phase and the buffer layer is obtainable by the further constituent and the buffer layer material and/or in each case precursors thereof being deposited separately or together by means of a chemical solution on the respective substrate and, optionally after further deposition steps for the buffer layer material and/or the further constituent, the coated substrate being subjected to a heat treatment to form a homogeneous mixed crystal phase comprising the further constituent, wherein the support material is biaxially textured, the further constituent of the buffer layer is copper and/or silver including the respective oxides thereof and is present in a content of from 2 to 40 at.% based on the total metal content of the buffer layer.
A sheet processing apparatus, comprising a thickness detecting device for detecting a thickness of a sheet, the thickness detecting device including: conveying means for conveying the sheet in a conveying direction; a plurality of conductive displacement members; a plurality of resonance circuits that are disposed to face the plurality of displacement members, each resonance circuit including a coil that faces a corresponding one of the conductive displacement members, and a capacitor, wherein neighboring resonance circuits are configured to resonate at different resonance frequencies, wherein the plurality of resonance circuits and the plurality of conductive displacement members are arranged in a direction crossing the conveying direction of the sheet, and wherein the plurality of conductive displacement members are configured to be displaced depending on the thickness of the sheet such that a distance between each coil and the corresponding displacement member is related to the thickness of the sheet; and a calculation unit configured to calculate a thickness of the sheet based on impedance values of the plurality of resonance circuits and the plurality of displacement members. conveying means for conveying the sheet in a conveying direction; a plurality of conductive displacement members; a plurality of resonance circuits that are disposed to face the plurality of displacement members, each resonance circuit including a coil that faces a corresponding one of the conductive displacement members, and a capacitor, wherein neighboring resonance circuits are configured to resonate at different resonance frequencies, wherein the plurality of resonance circuits and the plurality of conductive displacement members are arranged in a direction crossing the conveying direction of the sheet, and wherein the plurality of conductive displacement members are configured to be displaced depending on the thickness of the sheet such that a distance between each coil and the corresponding displacement member is related to the thickness of the sheet; and a calculation unit configured to calculate a thickness of the sheet based on impedance values of the plurality of resonance circuits and the plurality of displacement members.
A Voltage sensor for measuring a high voltage, comprising a. a high-voltage primary side, b. a low-voltage secondary side, c. an ohmic capacitive voltage divider having i. a first resistor-capacitor parallel circuit and ii. a second resistor-capacitor parallel circuit, d. wherein the resistor-capacitor parallel circuits (4, 4') are electrically arranged in series, e. wherein the voltage drop across the second resistor-capacitor parallel circuit is correlated to the high voltage, wherein a resistor-capacitor network with a plurality of resistors (6, 6', 6") and capacitors (7, 7', 7") connected in parallel and selectively deactivatable is provided for electrically balancing the secondary side in parallel with the second resistor-capacitor parallel circuit, characterised in that the resistor-capacitor network comprises a plurality of parallel resistors (6, 6', 6"), in particular up to 15 resistors (6, 6', 6"), wherein a fuse (8, 8', 8") is arranged in series with each resistor. a. a high-voltage primary side, b. a low-voltage secondary side, c. an ohmic capacitive voltage divider having i. a first resistor-capacitor parallel circuit and ii. a second resistor-capacitor parallel circuit, i. a first resistor-capacitor parallel circuit and ii. a second resistor-capacitor parallel circuit, d. wherein the resistor-capacitor parallel circuits (4, 4') are electrically arranged in series, e. wherein the voltage drop across the second resistor-capacitor parallel circuit is correlated to the high voltage, a resistor-capacitor network with a plurality of resistors (6, 6', 6") and capacitors (7, 7', 7") connected in parallel and selectively deactivatable is provided for electrically balancing the secondary side in parallel with the second resistor-capacitor parallel circuit, characterised in that the resistor-capacitor network comprises a plurality of parallel resistors (6, 6', 6"), in particular up to 15 resistors (6, 6', 6"), wherein a fuse (8, 8', 8") is arranged in series with each resistor.
Elevator for holding an end portion of a pipe in a drill tower, the elevator having a hole from which, in operational use, the pipe is suspended with an end portion, wherein a minimum diameter of the end portion of the pipe is selected larger than the minimum diameter of the hole, wherein sidewalls of the hole are shaped with a receiving surface for receiving correspondingly-shaped sidewalls of the end portion of the pipe, wherein, the receiving surface comprises a first part (RS3a) and a second part (RS3b) neighbouring the first part (RS3a), the first part (RS3a) defining a frustoconical shape having a first conicity, characterised in that the second part (RS3b) defines a shape having at least partially a second conicity lower than the first conicity.
A first wireless transmit/receive unit, WTRU, comprising: a processor configured to derive a first PC5 priority level for a ProSe session to be established between the first WTRU and a second WTRU, wherein the first PC5 priority level is associated with an application running on the first WTRU, and wherein the first PC5 priority level is derived based on information associated with the application and in accordance with mapping information associated with the first PC5 priority level; and a transceiver configured to at least: send, to the second WTRU, an indication of the derived first PC5 priority level for the ProSe session and an application ID associated with the application running on the first WTRU, and receive, from the second WTRU, an indication of a second PC5 priority level that is accepted by the second WTRU, wherein the second PC5 priority level is for the ProSe session. a processor configured to derive a first PC5 priority level for a ProSe session to be established between the first WTRU and a second WTRU, wherein the first PC5 priority level is associated with an application running on the first WTRU, and wherein the first PC5 priority level is derived based on information associated with the application and in accordance with mapping information associated with the first PC5 priority level; and a transceiver configured to at least: send, to the second WTRU, an indication of the derived first PC5 priority level for the ProSe session and an application ID associated with the application running on the first WTRU, and receive, from the second WTRU, an indication of a second PC5 priority level that is accepted by the second WTRU, wherein the second PC5 priority level is for the ProSe session. send, to the second WTRU, an indication of the derived first PC5 priority level for the ProSe session and an application ID associated with the application running on the first WTRU, and receive, from the second WTRU, an indication of a second PC5 priority level that is accepted by the second WTRU, wherein the second PC5 priority level is for the ProSe session.
A process for manufacturing a composite blade, comprising: manufacturing an oversized root region of a composite blade; fixturing the composite blade into a machining fixture (130, 132, 134) at a primary Y and Z axis datum located at attachment fillet radii of a root region; machining V-notches (140, 142) into the oversized root region to form a Y' and Z' axis datum of a sacrificial datum system in relation to the primary Y and Z axis datum; fixturing the composite blade into a machining fixture at the V-notches (140, 142) that form the Y' and Z' axis datum of the sacrificial datum system; applying an oversized coating layer over the attachment fillet radii of the root region; machining the oversized coating layer to a machined coating layer forming a Y" and Z" axis datum with respect to the Y' and Z' axis datum of the sacrificial datum system; fixturing the composite blade into a machining fixture (140, 142) at the machined coating layer forming the Y" and Z" axis datum; and machining off the sacrificial datum system removing the V-notches (140,142). manufacturing an oversized root region of a composite blade; fixturing the composite blade into a machining fixture (130, 132, 134) at a primary Y and Z axis datum located at attachment fillet radii of a root region; machining V-notches (140, 142) into the oversized root region to form a Y' and Z' axis datum of a sacrificial datum system in relation to the primary Y and Z axis datum; fixturing the composite blade into a machining fixture at the V-notches (140, 142) that form the Y' and Z' axis datum of the sacrificial datum system; applying an oversized coating layer over the attachment fillet radii of the root region; machining the oversized coating layer to a machined coating layer forming a Y" and Z" axis datum with respect to the Y' and Z' axis datum of the sacrificial datum system; fixturing the composite blade into a machining fixture (140, 142) at the machined coating layer forming the Y" and Z" axis datum; and machining off the sacrificial datum system removing the V-notches (140,142).
A power semiconductor package comprising: a leadframe having first and second partially etched segments (250d, 250c) and at least one non-etched segment, whereby the partially etched segments (250d, 250c) have a fraction of the full thickness of the at least one non-etched segment; a first semiconductor die having a first power transistor and a driver integrated circuit monolithically formed thereon; and a second semiconductor die having a second power transistor; wherein said first semiconductor die is configured for attachment to said first partially etched segment and said second semiconductor die is configured for attachment to said second partially etched segment that is a different segment than said first partially etched segment; wherein said first and second partially etched segments (250d, 250c) and said at least one non-etched segment enable said first semiconductor die to be coupled to said second semiconductor die by a legless conductive clip, wherein a power electrode of said first power transistor is coupled to a power electrode of said second power transistor by said legless conductive clip. a leadframe having first and second partially etched segments (250d, 250c) and at least one non-etched segment, whereby the partially etched segments (250d, 250c) have a fraction of the full thickness of the at least one non-etched segment; a first semiconductor die having a first power transistor and a driver integrated circuit monolithically formed thereon; and a second semiconductor die having a second power transistor; wherein said first semiconductor die is configured for attachment to said first partially etched segment and said second semiconductor die is configured for attachment to said second partially etched segment that is a different segment than said first partially etched segment; wherein said first and second partially etched segments (250d, 250c) and said at least one non-etched segment enable said first semiconductor die to be coupled to said second semiconductor die by a legless conductive clip, wherein a power electrode of said first power transistor is coupled to a power electrode of said second power transistor by said legless conductive clip.
A UHF RFID antenna system comprising: a disposable metal cover comprising a metal layer and an insulating layer; and a tab integrally formed with said disposable metal cover such that said tab shares a portion of said metal layer and a portion of said insulating layer with said disposable metal cover, said tab having part of said portion of said metal layer removed to form a matching loop electrically coupled to said disposable metal cover. a disposable metal cover comprising a metal layer and an insulating layer; and a tab integrally formed with said disposable metal cover such that said tab shares a portion of said metal layer and a portion of said insulating layer with said disposable metal cover, said tab having part of said portion of said metal layer removed to form a matching loop electrically coupled to said disposable metal cover.
A method comprising: preparing a raw material including a mixture comprising a polymer and a functional material selected based on at least one of a structural property, and electrical property, a thermal property, and an aesthetic property, wherein the functional material has a first average particle size in the raw material; heating a chamber of a cavitation machine to a first temperature selected to be greater than a melting temperature of the raw material; introducing a volume of the raw material into the chamber of the cavitation machine; applying a hydrodynamic cavitation process to the raw material to produce a product material, wherein the functional material has a second average particle size, smaller than the first average particle size, in the product material; forming the product material into a desired shape; and cooling the product material to a second temperature selected to be lower than the melting temperature of the product material. preparing a raw material including a mixture comprising a polymer and a functional material selected based on at least one of a structural property, and electrical property, a thermal property, and an aesthetic property, wherein the functional material has a first average particle size in the raw material; heating a chamber of a cavitation machine to a first temperature selected to be greater than a melting temperature of the raw material; introducing a volume of the raw material into the chamber of the cavitation machine; applying a hydrodynamic cavitation process to the raw material to produce a product material, wherein the functional material has a second average particle size, smaller than the first average particle size, in the product material; forming the product material into a desired shape; and cooling the product material to a second temperature selected to be lower than the melting temperature of the product material.
Method to operate a base station of a cellular network, the base station being capable of supporting bandwidth limited operation of a plurality of user equipments camping on said base station, comprising the step for said base station of broadcasting a set of system information items, wherein the set of system information items additionally comprises a first system information item indicating that camping is allowed for at least one first user equipment supporting bandwidth limited operation only, and the set of system information items comprise a second system information item indicating whether newly camping is allowed for at least one second user equipments supporting additionally other modes of operation than bandwidth-limited operation, under the condition that said second user equipment is intending to use at least one of the features specific to a base station supporting bandwidth-limited operation, wherein the features specific to the base station supporting bandwidth- limited operation comprises at least one out of the group of: - enhanced coverage mode, - enhanced discontinuous reception mode, - power saving mode, - periodic data transmission, - early data transmission or reception, wherein the set of system information items further comprises at least one system information item indicating if a neighbour base station is supporting bandwidth-limited operation, and wherein the second system information item is further accompanied by a third system information item indicating whether already camping user equipments supporting other modes of operation than bandwidth-limited operation are allowed to stay on said base station. wherein the features specific to the base station supporting bandwidth- limited operation comprises at least one out of the group of: - enhanced coverage mode, - enhanced discontinuous reception mode, - power saving mode, - periodic data transmission, - early data transmission or reception, - enhanced coverage mode, - enhanced discontinuous reception mode, - power saving mode, - periodic data transmission, - early data transmission or reception, wherein the set of system information items further comprises at least one system information item indicating if a neighbour base station is supporting bandwidth-limited operation, and wherein the second system information item is further accompanied by a third system information item indicating whether already camping user equipments supporting other modes of operation than bandwidth-limited operation are allowed to stay on said base station.
A light emitting diode structure comprising: semiconductor layers, including a first conductivity layer, an active layer, and a second conductivity layer, the first conductivity layer having a bottom surface, and the second conductivity layer having a top surface through which light is emitted; a first metal layer overlying the first conductivity layer and having a first portion electrically connected to and opposing the bottom surface of the first conductivity layer; a first dielectric portion extending through the first metal layer to isolate a second portion of the first metal layer from the first portion; a metal shunt electrically connecting the second portion of the first metal layer to the top surface of the second conductivity layer; one or more first electrodes electrically connected to the first portion of the first metal layer; one or more second electrodes electrically connected to the second portion of the first metal layer such that the light emitting diode structure forms a flip chip with the first and the second electrodes on a bottom surface for direct mounting to electrodes of a submount; and a further dielectric portion isolating the metal shunt from other than the top surface of the second conductivity layer. semiconductor layers, including a first conductivity layer, an active layer, and a second conductivity layer, the first conductivity layer having a bottom surface, and the second conductivity layer having a top surface through which light is emitted; a first metal layer overlying the first conductivity layer and having a first portion electrically connected to and opposing the bottom surface of the first conductivity layer; a first dielectric portion extending through the first metal layer to isolate a second portion of the first metal layer from the first portion; a metal shunt electrically connecting the second portion of the first metal layer to the top surface of the second conductivity layer; one or more first electrodes electrically connected to the first portion of the first metal layer; one or more second electrodes electrically connected to the second portion of the first metal layer such that the light emitting diode structure forms a flip chip with the first and the second electrodes on a bottom surface for direct mounting to electrodes of a submount; and a further dielectric portion isolating the metal shunt from other than the top surface of the second conductivity layer.