A material for forming a filling film for inhibiting semiconductor substrate (1,4) pattern collapse, the material comprising: a polymer having a structural unit shown by the following general formula; a residual-solvent removal promoter containing a compound shown by the following general formula; and an organic solvent, wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer, and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5. a polymer having a structural unit shown by the following general formula; a residual-solvent removal promoter containing a compound shown by the following general formula; and an organic solvent, wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer, and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5. wherein a ratio Mw/Mn of a weight-average molecular weight Mw and a number-average molecular weight Mn of the polymer in terms of polystyrene by a gel permeation chromatography method is 2.50≤Mw/Mn≤9.00, the residual-solvent removal promoter is contained in an amount of 0.1 to 40 parts by mass based on 100 parts by mass of the polymer, and the material for forming a filling film for inhibiting semiconductor substrate pattern collapse comprises no acid generator, wherein R 01 represents a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms; X represents a divalent organic group having 1 to 30 carbon atoms; "m" represents an integer of 0 to 5, "n" represents an integer of 1 to 6, and m+n is an integer of 1 or more and 6 or less; and "p" represents 0 or 1, wherein Q represents a single bond, or a hydrocarbon group with a valency of "q" having 1 to 20 carbon atoms; R 02 represents a hydrogen atom or a methyl group; and "q" represents an integer of 1 to 5.