A manufacturing method of an n-type doped silicon passivation film and applied to manufacturing a solar cell, comprising: providing a silicon wafer as a substrate; forming the n-type doped silicon passivation film on a first main surface of the silicon wafer, and simultaneously forming the n-type doped silicon passivation film on at least a portion of surfaces (112, 113) of the silicon wafer except the first main surface due to wrapping around at a first temperature; and performing a heat treatment on the n-type doped silicon passivation film at a second temperature within a temperature range of 590°C to 750°C; wherein the first temperature is lower than the second temperature; and preparing the solar cell by using the silicon wafer with the n-type doped silicon passivation film formed on the first main surface of the silicon wafer, wherein the silicon wafer is an n-type semiconductor silicon wafer; the first main surface is a back surface of the n-type semiconductor silicon wafer; and the surfaces (112, 113) of the silicon wafer except the first main surface include a front surface of the silicon wafer and a side surface of the silicon wafer; and before forming the n-type doped silicon passivation film on the first main surface of the silicon wafer at the first temperature, the manufacturing method further comprises: forming a barrier layer on the surfaces (112, 113) of the silicon wafer except the first main surface, wherein the barrier layer comprises a silicon oxide layer, a boron-doped silicon oxide layer, a silicon nitride layer or a combination of materials selected from a group consisting of a silicon oxide layer, a boron-doped silicon oxide layer and the silicon nitride layer, and a thickness range of the barrier layer is between 30 nm and 500 nm; etching and removing a portion of the n-type doped silicon passivation film are performed on the surfaces (112, 113) of the silicon wafer except the first main surface after the heat treatment; and the heat treatment on the n-type doped silicon passivation film is performed for 10 to 60 minutes, to reduce the content of the inactive doping atoms in the n-type doped silicon passivation film. providing a silicon wafer as a substrate; forming the n-type doped silicon passivation film on a first main surface of the silicon wafer, and simultaneously forming the n-type doped silicon passivation film on at least a portion of surfaces (112, 113) of the silicon wafer except the first main surface due to wrapping around at a first temperature; and performing a heat treatment on the n-type doped silicon passivation film at a second temperature within a temperature range of 590°C to 750°C; wherein the first temperature is lower than the second temperature; and preparing the solar cell by using the silicon wafer with the n-type doped silicon passivation film formed on the first main surface of the silicon wafer, wherein the silicon wafer is an n-type semiconductor silicon wafer; the first main surface is a back surface of the n-type semiconductor silicon wafer; and the surfaces (112, 113) of the silicon wafer except the first main surface include a front surface of the silicon wafer and a side surface of the silicon wafer; and before forming the n-type doped silicon passivation film on the first main surface of the silicon wafer at the first temperature, the manufacturing method further comprises: forming a barrier layer on the surfaces (112, 113) of the silicon wafer except the first main surface, wherein the barrier layer comprises a silicon oxide layer, a boron-doped silicon oxide layer, a silicon nitride layer or a combination of materials selected from a group consisting of a silicon oxide layer, a boron-doped silicon oxide layer and the silicon nitride layer, and a thickness range of the barrier layer is between 30 nm and 500 nm; etching and removing a portion of the n-type doped silicon passivation film are performed on the surfaces (112, 113) of the silicon wafer except the first main surface after the heat treatment; and the heat treatment on the n-type doped silicon passivation film is performed for 10 to 60 minutes, to reduce the content of the inactive doping atoms in the n-type doped silicon passivation film. forming a barrier layer on the surfaces (112, 113) of the silicon wafer except the first main surface, wherein the barrier layer comprises a silicon oxide layer, a boron-doped silicon oxide layer, a silicon nitride layer or a combination of materials selected from a group consisting of a silicon oxide layer, a boron-doped silicon oxide layer and the silicon nitride layer, and a thickness range of the barrier layer is between 30 nm and 500 nm; etching and removing a portion of the n-type doped silicon passivation film are performed on the surfaces (112, 113) of the silicon wafer except the first main surface after the heat treatment; and the heat treatment on the n-type doped silicon passivation film is performed for 10 to 60 minutes, to reduce the content of the inactive doping atoms in the n-type doped silicon passivation film.