mhurhangee/ep-ind-claims huggingface dataset:
Safety console, comprising: a console; the console comprising: a plurality of keys; and a contact board; characterized in that the contact board comprises, for each one of the keys, a first and a second contact array having at least two electrically conductive elements (43, 45, 47, 49) each; and wherein each one of the keys is configured, in an unactuated state of the key, to electrically connect the conductive elements (43, 45) of the respective first contact array to one another and to not electrically connect the conductive elements (47, 49) of the respective second contact array to one another; and wherein each one of the keys is configured, in an actuated state of the key, to electrically connect the conductive elements (43, 45) of the respective first contact array to one another and to electrically connect the conductive elements (47, 49) of the respective second contact array to one another, wherein, for each one of the keys, the conductive elements (47, 49) of the second contact array are arranged radially outside the respective first contact array with respect to a geometric center of the respective first contact array, so that, for each key, the conductive elements (43, 45) of the respective first contact array are surrounded by the conductive elements (47, 49) of the respective second contact array, wherein, in the safety console, each one of the keys is monitored by a safety circuit configured to respectively monitor an electrical resistor between two conductive elements (43, 45) of the first contact array of the respective key. a console; a plurality of keys; and a contact board; characterized in that the contact board comprises, for each one of the keys, a first and a second contact array having at least two electrically conductive elements (43, 45, 47, 49) each; and wherein each one of the keys is configured, in an unactuated state of the key, to electrically connect the conductive elements (43, 45) of the respective first contact array to one another and to not electrically connect the conductive elements (47, 49) of the respective second contact array to one another; and wherein each one of the keys is configured, in an actuated state of the key, to electrically connect the conductive elements (43, 45) of the respective first contact array to one another and to electrically connect the conductive elements (47, 49) of the respective second contact array to one another, wherein, for each one of the keys, the conductive elements (47, 49) of the second contact array are arranged radially outside the respective first contact array with respect to a geometric center of the respective first contact array, so that, for each key, the conductive elements (43, 45) of the respective first contact array are surrounded by the conductive elements (47, 49) of the respective second contact array, wherein, in the safety console, each one of the keys is monitored by a safety circuit configured to respectively monitor an electrical resistor between two conductive elements (43, 45) of the first contact array of the respective key.
A gas flow sensor for a ventilator comprising: a. a flow path extending between a first end that connects to a supply of gas and a second end that couples to a patient airway interface; b. a constant temperature anemometer sensor arranged within the flow path between those ends; c. a sampling port is configured to be coupled with a gas analyser device; and d. an orifice which is in fluid communication with the flow path and the sampling port so that in use gas may be drawn from the flow path for analysis, the gas being drawn through the orifice from the flow path at a position located between the anemometer sensor and the first end, wherein the distance between the orifice and the anemometer sensor is in the range of 3 - 10 mm. a. a flow path extending between a first end that connects to a supply of gas and a second end that couples to a patient airway interface; b. a constant temperature anemometer sensor arranged within the flow path between those ends; c. a sampling port is configured to be coupled with a gas analyser device; and d. an orifice which is in fluid communication with the flow path and the sampling port so that in use gas may be drawn from the flow path for analysis, the gas being drawn through the orifice from the flow path at a position located between the anemometer sensor and the first end, wherein the distance between the orifice and the anemometer sensor is in the range of 3 - 10 mm.
A compound of general formula or the stereoisomer, pharmaceutically acceptable salt, hydrate or solvate thereof, wherein: R 1 and R 2 are C 1-6 alkyl, respectively, or R 1 and R 2 together with the attached carbon atom form a C 3-7 cycloalkyl; R 3 is hydrogen, C 1-6 alkyl, substituted or unsubstituted C 6-10 aryl or 6- to 10-membered heteroaryl; Ar is substituted or unsubstituted C 6-10 aryl or 6- to 10-membered heteroaryl. R 1 and R 2 are C 1-6 alkyl, respectively, or R 1 and R 2 together with the attached carbon atom form a C 3-7 cycloalkyl; R 3 is hydrogen, C 1-6 alkyl, substituted or unsubstituted C 6-10 aryl or 6- to 10-membered heteroaryl; Ar is substituted or unsubstituted C 6-10 aryl or 6- to 10-membered heteroaryl.
A weight pin for use with a stacked weight exercise machine, the weight pin comprising: a handle portion; a shaft portion extending outwardly from the handle portion, wherein the shaft portion is configured to be removably positioned adjacent to one or more weights of the exercise machine to selectively engage the one or more weights during use of the exercise machine; interrogation circuitry arranged relative to the handle portion, the interrogation circuitry configured to read information from the adjacent one or more weights; and an accelerometer configured to respond to movement of the one or more weights during use of the exercise machine; wherein the interrogation circuitry comprises a processor to process information read from the adjacent one or more weights, and memory operably connected to the processor to record information from the processor; and characterised in that the memory includes computer-readable instructions that cause the processor to: determine rotational movement of the weight pin about an axis of the shaft portion based at least in part on the information received from the accelerometer; and determine a configuration of the exercise machine based on the rotational movement. a handle portion; a shaft portion extending outwardly from the handle portion, wherein the shaft portion is configured to be removably positioned adjacent to one or more weights of the exercise machine to selectively engage the one or more weights during use of the exercise machine; interrogation circuitry arranged relative to the handle portion, the interrogation circuitry configured to read information from the adjacent one or more weights; and an accelerometer configured to respond to movement of the one or more weights during use of the exercise machine; wherein the interrogation circuitry comprises a processor to process information read from the adjacent one or more weights, and memory operably connected to the processor to record information from the processor; and characterised in that the memory includes computer-readable instructions that cause the processor to: determine rotational movement of the weight pin about an axis of the shaft portion based at least in part on the information received from the accelerometer; and determine a configuration of the exercise machine based on the rotational movement.
A Runt-Related Transcription Factor 1 (RUNX1) inhibitor for use in a method for inhibiting, treating, or preventing aberrant angiogenesis or small vessel diseases (SVDs) in a subject, wherein said method comprises administering to said subject an effective amount of said Runt-Related Transcription Factor 1 (RUNX1) inhibitor and wherein said RUNX1 inhibitor comprises a small molecule that binds to RUNX1 and/or CBFβ.
A spinal implant device for use with adjacent spinous processes, the spinous processes including a superior spinous process and an inferior spinous process, the spinal implant device comprising: a first fixation plate including a first superior end and a first inferior end, the first superior end including a first screw hole, the first fixation plate being sized and configured to extend between and along the spinous processes with the first screw hole adjacent the superior spinous process; a second fixation plate including a second superior end and a second inferior end, the second inferior end including a fourth screw hole, the second fixation plate being sized and configured to extend between and along the spinous processes with-the fourth screw hole adjacent the inferior spinous process; a connector connected to the first fixation plate between the first superior end and the first inferior end and to the second fixation plate between the second superior end and the second inferior end; a first screw sized and configured to extend through the first screw hole towards the second fixation plate with the superior spinous process disposed between the first and second superior ends; and a second screw sized and configured to extend through the fourth screw hole towards the first fixation plate with the inferior spinous process disposed between the first and second inferior ends, the first and second screws being angularly disposed with respect to each other. a first fixation plate including a first superior end and a first inferior end, the first superior end including a first screw hole, the first fixation plate being sized and configured to extend between and along the spinous processes with the first screw hole adjacent the superior spinous process; a second fixation plate including a second superior end and a second inferior end, the second inferior end including a fourth screw hole, the second fixation plate being sized and configured to extend between and along the spinous processes with-the fourth screw hole adjacent the inferior spinous process; a connector connected to the first fixation plate between the first superior end and the first inferior end and to the second fixation plate between the second superior end and the second inferior end; a first screw sized and configured to extend through the first screw hole towards the second fixation plate with the superior spinous process disposed between the first and second superior ends; and a second screw sized and configured to extend through the fourth screw hole towards the first fixation plate with the inferior spinous process disposed between the first and second inferior ends, the first and second screws being angularly disposed with respect to each other.
A coated cutting tool consisting of a substrate of cemented carbide, cermet, ceramics, steel or cubic boron nitride and a multi-layered wear resistant coating having a total coating thickness from 5 to 25 μm and comprising at least two refractory coating layers deposited by chemical vapour deposition or moderate temperature chemical vapour deposition (MT-CVD), the at least two refractory coating layers including a first coating layer and a second coating layer being deposited on top of each other, wherein the second coating layer consists of titanium carbonitride Ti x C y N 1-y, with 0.85 ≤ x ≤ 1.1 and 0.4 ≤ y ≤ 0.85, and is deposited on top of the first coating layer by MT-CVD at a reaction temperature in the range from 600°C to 900°C, characterized in that the first coating layer consists of titanium aluminium nitride Ti 1-u Al u C v N w, with 0.2 ≤ u ≤ 1.0, v = 0 and 0.7 ≤ w ≤ 1.15, and is deposited by CVD at a reaction temperature in the range from 600°C to 900°C, and wherein the second Ti x C y N 1-y coating layer has a columnar grain morphology and the overall fiber texture of the Ti x C y N 1-y coating layer is characterized by a texture coefficient TC (1 1 1) > 2, the TC (1 1 1) being defined as follows: TC 111 = I 111 I 0 111 1 n ∑ n − 1 n I hkl I 0 hkl − 1, wherein (h k l) = measured intensity of the (hkl) reflection I 0 (h k l) = standard intensity of the standard powder diffraction data according to JCPDF-card no. 42-1489 n = number of reflections used in the calculation, whereby the (hkl) reflections used are: (1 1 1), (2 0 0), (2 2 0) and (3 1 1). (h k l) = measured intensity of the (hkl) reflection I 0 (h k l) = standard intensity of the standard powder diffraction data according to JCPDF-card no. 42-1489 n = number of reflections used in the calculation, whereby the (hkl) reflections used are: (1 1 1), (2 0 0), (2 2 0) and (3 1 1).
A method for tuning an adaptive Multivariable Proportional-Integral-Derivative PID controller within an operating range of the Multivariable PID controller, in a plant using a Model Predictive Control MPC, the operating range comprising a plurality of critical regions, the method comprising formulating the MPC for a process model of the plant, wherein a solution of the MPC accounts for constraints on the plant; obtaining an optimal control solution of the MPC in one or more critical regions from the plurality of critical regions using a look-up table comprising a plurality of rows, wherein each row of the look-up table is associated with a critical region from the plurality of critical regions, wherein each critical region from the plurality of critical regions is associated with a corresponding affine control law in the look-up table, the corresponding affine control law having the form U = M·θ + m, where U is an output, θ is an input, and M and m are constant matrices, and wherein the optimal control solution accounts for the constraints on the plant and the optimal control solution is for providing the affine control law corresponding to each of the one or more critical regions; determining one or more equivalent PID tuning parameters for the one or more critical regions corresponding to the optimal control solution of the MPC in the one or more critical regions based on the one or more corresponding affine control laws from the plurality of affine control laws, wherein determining the one or more equivalent PID tuning parameters comprises one of (i) merging the one or more critical regions and (ii) clustering the one or more critical regions by merging the one or more equivalent PID tuning parameters corresponding to the one or more critical regions; and tuning the adaptive Multivariable PID controller with the one or more equivalent PID tuning parameters to control the plant in the one or more critical regions.
A cellulose resin composition comprising a cellulose resin and two or more compounds represented by the following general formula: (wherein, n1 to n3 each represents a number of 1 to 3; and R 1, R 2 and R 3 each represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms, provided that R 1, R 2 and R 3 are not the same members at the same time).
A method comprising: providing a first die having a surface comprising a bond pad to route electrical signals of the first die; attaching the first die to a layer of a substrate (106; 460); forming one or more additional layers (420, 422) of the substrate to embed the first die in the substrate; coupling a second die to the one or more additional layers, the second die having a surface comprising a bond pad to route electrical signals of the second die, wherein the second die is coupled to the one or more additional layers such that electrical signals are routed between the first die and the second die and wherein the additional layers are positioned between the first and the second die; and coupling a heat sink to the second die, wherein the second die is coupled to the one or more additional layers at a first surface of the second die, wherein the heat sink is coupled via a heat transfer compound to the second die at a second surface of the second die that is opposite to the first surface of the second die, and wherein the heat sink is not coupled to the first die. providing a first die having a surface comprising a bond pad to route electrical signals of the first die; attaching the first die to a layer of a substrate (106; 460); forming one or more additional layers (420, 422) of the substrate to embed the first die in the substrate; coupling a second die to the one or more additional layers, the second die having a surface comprising a bond pad to route electrical signals of the second die, wherein the second die is coupled to the one or more additional layers such that electrical signals are routed between the first die and the second die and wherein the additional layers are positioned between the first and the second die; and coupling a heat sink to the second die, wherein the second die is coupled to the one or more additional layers at a first surface of the second die, wherein the heat sink is coupled via a heat transfer compound to the second die at a second surface of the second die that is opposite to the first surface of the second die, and wherein the heat sink is not coupled to the first die.
A module for interfacing with industrial control equipment, comprising: a terminal configured to receive an electrical conductor in a channel interfacing with industrial control equipment; a variable resistance device being a Field Effect Transistor, FET, connected to the terminal and adapted to provide a resistance in the channel; and a control circuit (44, 46) connected to the variable resistance device, wherein the control circuit (44, 46) comprises a processor connected to an amplifier and wherein the amplifier is adapted to drive a gate of the variable resistance device; and a resistor for current sensing connected to the variable resistance device, wherein the control circuit (44, 46) is configured to control the variable resistance device to adjust the resistance in the channel for a given mode selected from a plurality of modes, wherein each mode of the plurality of modes configures a different resistance in the channel, and wherein the resistor is further connected to a first input of the amplifier and the processor is connected to a second input of the amplifier. a terminal configured to receive an electrical conductor in a channel interfacing with industrial control equipment; a variable resistance device being a Field Effect Transistor, FET, connected to the terminal and adapted to provide a resistance in the channel; and a control circuit (44, 46) connected to the variable resistance device, wherein the control circuit (44, 46) comprises a processor connected to an amplifier and wherein the amplifier is adapted to drive a gate of the variable resistance device; and a resistor for current sensing connected to the variable resistance device, wherein the control circuit (44, 46) is configured to control the variable resistance device to adjust the resistance in the channel for a given mode selected from a plurality of modes, wherein each mode of the plurality of modes configures a different resistance in the channel, and wherein the resistor is further connected to a first input of the amplifier and the processor is connected to a second input of the amplifier.
A method for producing a positive electrode for a secondary battery, comprising the steps of: applying a slurry for a positive electrode material layer onto a current collector, and drying the applied slurry to form a positive electrode material layer, the slurry for a positive electrode material layer containing a fluorine-containing polymer, a positive electrode active material, and a dispersion medium; and applying a slurry for a surface layer onto the positive electrode material layer, and drying the applied slurry, the slurry for a surface layer containing a particulate acrylic polymer, a water-soluble polymer, and water, and having a content ratio of the particulate acrylic polymer and the water-soluble polymer in a total solid content of 60% by weight to 95% by weight; wherein the particulate acrylic polymer contains a (meth)acrylic acid ester monomer unit and an acid group-containing vinyl monomer unit and the ratio of the acid group-containing vinyl monomer unit in the particulate acrylic polymer is 1.0% by weight or more and 3.0% by weight or less; and wherein the water-soluble polymer contains an ethylenically unsaturated carboxylic acid monomer unit and the ratio of the ethylenically unsaturated carboxylic acid monomer unit in the water-soluble polymer is 20% by weight or more and 50% by weight or less. applying a slurry for a positive electrode material layer onto a current collector, and drying the applied slurry to form a positive electrode material layer, the slurry for a positive electrode material layer containing a fluorine-containing polymer, a positive electrode active material, and a dispersion medium; and applying a slurry for a surface layer onto the positive electrode material layer, and drying the applied slurry, the slurry for a surface layer containing a particulate acrylic polymer, a water-soluble polymer, and water, and having a content ratio of the particulate acrylic polymer and the water-soluble polymer in a total solid content of 60% by weight to 95% by weight; wherein the particulate acrylic polymer contains a (meth)acrylic acid ester monomer unit and an acid group-containing vinyl monomer unit and the ratio of the acid group-containing vinyl monomer unit in the particulate acrylic polymer is 1.0% by weight or more and 3.0% by weight or less; and wherein the water-soluble polymer contains an ethylenically unsaturated carboxylic acid monomer unit and the ratio of the ethylenically unsaturated carboxylic acid monomer unit in the water-soluble polymer is 20% by weight or more and 50% by weight or less.
Method for controlling a modular multilevel converter having submodules, wherein each submodule has semiconductor switches (T 1, T 2), in which the semiconductor switches (T 1, T 2) are actuated at a switching frequency (f) in order to provide an AC voltage as output voltage of the converter, characterized in that an operating state of the converter is identified and in that the switching frequency (f) of the semiconductor switches (T 1, T 2) is set depending on the operating state so that an operational aspect of the converter is optimized, - wherein the operating state is identified by taking into account at least one of the following operating parameters: operating point of the converter, voltage, current or power at an input or at an output of the converter, junction temperature of the semiconductor switches (T 1, T 2), lifetime forecast of the semiconductor switches (T 1, T 2), power cycling of the semiconductor switches (T 1, T 2), - wherein energy losses owing to switching processes of the semiconductor switches (T 1, T 2) are used as operational aspect, said energy losses being reduced by means of setting the switching frequency (f), and/or an operating lifetime is used as operational aspect so that the operating lifetime is extended, and/or a maintenance outlay for the converter is used as operational aspect so that the maintenance outlay is reduced, and - wherein modules, to which the submodules are assigned, are used in the converter, wherein a respective switching frequency (f) is set for each module independently of the other modules. - wherein the operating state is identified by taking into account at least one of the following operating parameters: operating point of the converter, voltage, current or power at an input or at an output of the converter, junction temperature of the semiconductor switches (T 1, T 2), lifetime forecast of the semiconductor switches (T 1, T 2), power cycling of the semiconductor switches (T 1, T 2), - wherein energy losses owing to switching processes of the semiconductor switches (T 1, T 2) are used as operational aspect, said energy losses being reduced by means of setting the switching frequency (f), and/or an operating lifetime is used as operational aspect so that the operating lifetime is extended, and/or a maintenance outlay for the converter is used as operational aspect so that the maintenance outlay is reduced, and - wherein modules, to which the submodules are assigned, are used in the converter, wherein a respective switching frequency (f) is set for each module independently of the other modules.