A high voltage power electronics module for subsea applications, wherein high voltage is voltages starting at 600 V, wherein the power electronics module comprises: a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners, wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure, wherein in said cross-section of the encapsulation structure any rounded inner corner and rounded outer corner is connected by an inclined line forming an outer boundary of the encapsulation structure, and wherein the outer angle (α) between at least some of the inclined lines and said plane is an obtuse angle. a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners, wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure, wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded inner corners wherein the rounded inner corners are concave-shaped forming an indentation in the encapsulation structure, wherein in any cross-section through the encapsulation structure, perpendicular to a plane defined by a surface of the baseplate on which the power semiconductor chip is arranged, the encapsulation structure has rounded outer corners, wherein the rounded outer corners are convex-shaped forming a protuberance in the encapsulation structure, wherein in said cross-section of the encapsulation structure any rounded inner corner and rounded outer corner is connected by an inclined line forming an outer boundary of the encapsulation structure, and wherein the outer angle (α) between at least some of the inclined lines and said plane is an obtuse angle.