A method of processing a semiconductor wafer comprising: depositing a silicon layer on the semiconductor wafer, the silicon layer including an inner surface facing the semiconductor wafer and an outer surface opposite the inner surface, the silicon layer having a first thickness defined between the inner surface and the outer surface, the first thickness being substantially uniform throughout the silicon layer; inspecting the semiconductor wafer to determine an initial wafer profile prior to contacting the outer surface of the silicon layer with a pad surface; positioning the semiconductor wafer in a polishing apparatus, the polishing apparatus including a polishing pad having the pad surface, the pad surface defining a center area and an edge area; dressing at least one of the center area and the edge area of the pad surface based on the initial wafer profile of the semiconductor wafer; contacting the outer surface of the silicon layer with the pad surface; applying slurry to the outer surface of the silicon layer; rotating the pad while the pad surface is in contact with the outer surface of the silicon layer such that a portion of the silicon layer is removed to provide a smooth surface of the silicon layer, a second thickness being defined between the inner surface and the smooth surface, the second thickness being substantially uniform throughout the silicon layer; inspecting the semiconductor wafer to determine a post-polishing wafer profile after the removal of a portion of the silicon layer; comparing the initial wafer profile to the post-polished wafer profile to determine variations between the profiles; and dressing one of the center area and the edge area of the pad surface based on the variations between the initial wafer profile and the post-polished wafer profile. depositing a silicon layer on the semiconductor wafer, the silicon layer including an inner surface facing the semiconductor wafer and an outer surface opposite the inner surface, the silicon layer having a first thickness defined between the inner surface and the outer surface, the first thickness being substantially uniform throughout the silicon layer; inspecting the semiconductor wafer to determine an initial wafer profile prior to contacting the outer surface of the silicon layer with a pad surface; positioning the semiconductor wafer in a polishing apparatus, the polishing apparatus including a polishing pad having the pad surface, the pad surface defining a center area and an edge area; dressing at least one of the center area and the edge area of the pad surface based on the initial wafer profile of the semiconductor wafer; contacting the outer surface of the silicon layer with the pad surface; applying slurry to the outer surface of the silicon layer; rotating the pad while the pad surface is in contact with the outer surface of the silicon layer such that a portion of the silicon layer is removed to provide a smooth surface of the silicon layer, a second thickness being defined between the inner surface and the smooth surface, the second thickness being substantially uniform throughout the silicon layer; inspecting the semiconductor wafer to determine a post-polishing wafer profile after the removal of a portion of the silicon layer; comparing the initial wafer profile to the post-polished wafer profile to determine variations between the profiles; and dressing one of the center area and the edge area of the pad surface based on the variations between the initial wafer profile and the post-polished wafer profile.