A reflective mask blank comprising: a substrate; a multilayer reflective film formed on the substrate and configured to reflect exposure light; a protective film formed on the multilayer reflective film and configured to protect the multilayer reflective film; an absorption film formed on the protective film and configured to absorb exposure light; and a conductive film formed on an opposite surface of the a surface of the substrate where the multilayer reflective film is formed, wherein the substrate is formed with a material containing quartz (SiO 2) as a main component and titanium oxide (TiO 2), the multilayer reflective film is formed from a multilayer structure formed by overlaying, on the substrate, a plurality of layers each consisting of a layer whose material is molybdenum (Mo) and a layer whose material is silicon (Si), the protective film is formed on the multilayer reflective film, and has a monolayer structure formed with a material containing either ruthenium (Ru) or silicon (Si), or a laminated structure in which a material containing any one of an oxide, a nitride, or an oxynitride of ruthenium (Ru), or an oxide, a nitride, or an oxynitride of silicon (Si) is additionally laminated on the monolayer structure as an uppermost layer, the absorption film is formed on the protective film, and has a monolayer structure formed with a material containing any one of tantalum (Ta), or an oxide, a nitride, or an oxynitride thereof, or a laminated structure in which a material containing any one of an oxide, a nitride, or an oxynitride of tantalum (Ta), or an oxide, a nitride, or an oxynitride of silicon (Si) is additionally laminated on the monolayer structure as an uppermost layer, and the conductive film has a laminated structure or a monolayer structure having a layer of a material containing either indium tin oxide or zinc oxide (ZnO), characterized in that the material of the substrate further contains at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur, selenium (Se), gold (Au), and neodymium (Nd). a substrate; a multilayer reflective film formed on the substrate and configured to reflect exposure light; a protective film formed on the multilayer reflective film and configured to protect the multilayer reflective film; an absorption film formed on the protective film and configured to absorb exposure light; and a conductive film formed on an opposite surface of the a surface of the substrate where the multilayer reflective film is formed, wherein the substrate is formed with a material containing quartz (SiO 2) as a main component and titanium oxide (TiO 2), the multilayer reflective film is formed from a multilayer structure formed by overlaying, on the substrate, a plurality of layers each consisting of a layer whose material is molybdenum (Mo) and a layer whose material is silicon (Si), the protective film is formed on the multilayer reflective film, and has a monolayer structure formed with a material containing either ruthenium (Ru) or silicon (Si), or a laminated structure in which a material containing any one of an oxide, a nitride, or an oxynitride of ruthenium (Ru), or an oxide, a nitride, or an oxynitride of silicon (Si) is additionally laminated on the monolayer structure as an uppermost layer, the absorption film is formed on the protective film, and has a monolayer structure formed with a material containing any one of tantalum (Ta), or an oxide, a nitride, or an oxynitride thereof, or a laminated structure in which a material containing any one of an oxide, a nitride, or an oxynitride of tantalum (Ta), or an oxide, a nitride, or an oxynitride of silicon (Si) is additionally laminated on the monolayer structure as an uppermost layer, and the conductive film has a laminated structure or a monolayer structure having a layer of a material containing either indium tin oxide or zinc oxide (ZnO), characterized in that the material of the substrate further contains at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur, selenium (Se), gold (Au), and neodymium (Nd).