An Integrated Circuit, IC, device, the IC device comprising: a semiconductor substrate; a charge emitter (106, 306) embedded in the semiconductor substrate (102, 302) and configured to produce an electrical charge in the semiconductor substrate (102, 302); and a charge sensor (108, 308) embedded in the semiconductor substrate (102, 302) and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate (102, 302), wherein the magnitude of the response signal depends on the thickness of the semiconductor substrate (102, 302), characterized in that the IC device further comprises an emitter controller configured to control the magnitude of electrical charge produced by the charge emitter (106, 306); wherein the IC device further comprises at least one second charge emitter embedded in the semiconductor substrate (102, 302) and configured to produce a second electrical charge in the semiconductor substrate (102, 302), wherein the emitter controller is further configured to control the at least one second charge emitter (106, 306) to produce the second electrical charge in the semiconductor substrate (102, 302) having the same magnitude as the electrical charge, wherein the charge sensor (108, 308) generates a second response signal in response to the second electrical charge, and wherein the IC device further comprises a response analysis unit configured to compare the second response signal to the response signal to determine a change in the thickness of the semiconductor substrate (102, 302); and wherein the IC device is configured to switch on the first charge emitter and the at least one second charge emitter simultaneously to increase the response signal generated by the charge sensor (108, 308). a semiconductor substrate; a charge emitter (106, 306) embedded in the semiconductor substrate (102, 302) and configured to produce an electrical charge in the semiconductor substrate (102, 302); and a charge sensor (108, 308) embedded in the semiconductor substrate (102, 302) and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate (102, 302), wherein the magnitude of the response signal depends on the thickness of the semiconductor substrate (102, 302), characterized in that the IC device further comprises an emitter controller configured to control the magnitude of electrical charge produced by the charge emitter (106, 306); wherein the IC device further comprises at least one second charge emitter embedded in the semiconductor substrate (102, 302) and configured to produce a second electrical charge in the semiconductor substrate (102, 302), wherein the emitter controller is further configured to control the at least one second charge emitter (106, 306) to produce the second electrical charge in the semiconductor substrate (102, 302) having the same magnitude as the electrical charge, wherein the charge sensor (108, 308) generates a second response signal in response to the second electrical charge, and wherein the IC device further comprises a response analysis unit configured to compare the second response signal to the response signal to determine a change in the thickness of the semiconductor substrate (102, 302); and wherein the IC device is configured to switch on the first charge emitter and the at least one second charge emitter simultaneously to increase the response signal generated by the charge sensor (108, 308).