A beam former module, comprising: a package base; at least one true time delay meander line and at least one RF signal transmission line encapsulated in the package base; a first TTD module attached to the package base and comprising a plurality of switching elements (44, 46) configured to define a signal transmission path between a signal input and a signal output of the first TTD module by selectively activating a plurality of time delay lines; and a second TTD module attached to the package base and comprising a plurality of switching elements (44, 46) configured to couple a signal input of the second TTD module and a signal output of the second TTD module by selectively activating a plurality of time delay lines, wherein: at least one of the time delay lines of the first TTD module is electrically coupled to the at least one TTD meander line encapsulated in the package base; at least one of the time delay lines of the second TTD module is coupled to at least one TTD meander lines encapsulated in the package base; the signal input and the signal output of the first TTD module are electrically coupled to the at least one RF signal transmission line; and the at least one time delay line of the first TTD module electrically coupled to the at least one TTD meander line comprises: a first on-chip portion coupled between a first switching element of the plurality of switching elements and a first bond pad of the first TTD module; a second on-chip portion coupled between a second switching element of the plurality of switching elements and a second bond pad of the first TTD module; and wherein the at least one TTD meander line is electrically coupled to the first bond pad and the second bond pad. a package base; at least one true time delay meander line and at least one RF signal transmission line encapsulated in the package base; a first TTD module attached to the package base and comprising a plurality of switching elements (44, 46) configured to define a signal transmission path between a signal input and a signal output of the first TTD module by selectively activating a plurality of time delay lines; and a second TTD module attached to the package base and comprising a plurality of switching elements (44, 46) configured to couple a signal input of the second TTD module and a signal output of the second TTD module by selectively activating a plurality of time delay lines, wherein: at least one of the time delay lines of the first TTD module is electrically coupled to the at least one TTD meander line encapsulated in the package base; at least one of the time delay lines of the second TTD module is coupled to at least one TTD meander lines encapsulated in the package base; the signal input and the signal output of the first TTD module are electrically coupled to the at least one RF signal transmission line; and the at least one time delay line of the first TTD module electrically coupled to the at least one TTD meander line comprises: a first on-chip portion coupled between a first switching element of the plurality of switching elements and a first bond pad of the first TTD module; a second on-chip portion coupled between a second switching element of the plurality of switching elements and a second bond pad of the first TTD module; and wherein the at least one TTD meander line is electrically coupled to the first bond pad and the second bond pad. at least one of the time delay lines of the first TTD module is electrically coupled to the at least one TTD meander line encapsulated in the package base; at least one of the time delay lines of the second TTD module is coupled to at least one TTD meander lines encapsulated in the package base; the signal input and the signal output of the first TTD module are electrically coupled to the at least one RF signal transmission line; and the at least one time delay line of the first TTD module electrically coupled to the at least one TTD meander line comprises: a first on-chip portion coupled between a first switching element of the plurality of switching elements and a first bond pad of the first TTD module; a second on-chip portion coupled between a second switching element of the plurality of switching elements and a second bond pad of the first TTD module; and wherein the at least one TTD meander line is electrically coupled to the first bond pad and the second bond pad. a first on-chip portion coupled between a first switching element of the plurality of switching elements and a first bond pad of the first TTD module; a second on-chip portion coupled between a second switching element of the plurality of switching elements and a second bond pad of the first TTD module; and wherein the at least one TTD meander line is electrically coupled to the first bond pad and the second bond pad.