An image sensor pixel, comprising: a photosensitive element disposed in a substrate layer for accumulating an image charge in response to light; a floating diffusion region disposed in the substrate layer to receive the image charge from the photosensitive element; and a transfer device disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region, the transfer device comprising a surface channel device including a surface channel gate disposed over a surface channel region, wherein the surface channel region is adjacent to the floating diffusion region, characterized in that the transfer device further includes a buried channel device including a buried channel gate disposed over a buried channel dopant region, electrons in the buried channel dopant region having a higher energy level than electrons in the surface channel region, electrons in the surface channel region having a higher energy level than electrons in the photosensitive element, and electrons in the photosensitive element having a higher energy level than electrons in the floating diffusion region; the surface channel device in series with the buried channel device, wherein the surface channel gate has the opposite doping polarity of the buried channel gate; and a common gate electrode and a common gate insulating layer on the substrate layer, wherein the buried channel gate and the surface channel gate are disposed between the common gate electrode and the common gate insulating layer, and wherein the common gate electrode delivers a gate voltage common to the buried channel gate and the surface channel gate; wherein the buried channel dopant region is adjacent to the photosensitive element and to the surface channel region; wherein the buried channel gate is adjacent to the surface channel gate; wherein the surface channel gate, the photosensitive element, the buried channel dopant region and the floating diffusion region have the same doping polarity. a photosensitive element disposed in a substrate layer for accumulating an image charge in response to light; a floating diffusion region disposed in the substrate layer to receive the image charge from the photosensitive element; and a transfer device disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region, the transfer device comprising a surface channel device including a surface channel gate disposed over a surface channel region, wherein the surface channel region is adjacent to the floating diffusion region, a buried channel device including a buried channel gate disposed over a buried channel dopant region, electrons in the buried channel dopant region having a higher energy level than electrons in the surface channel region, electrons in the surface channel region having a higher energy level than electrons in the photosensitive element, and electrons in the photosensitive element having a higher energy level than electrons in the floating diffusion region; the surface channel device in series with the buried channel device, wherein the surface channel gate has the opposite doping polarity of the buried channel gate; and a common gate electrode and a common gate insulating layer on the substrate layer, wherein the buried channel gate and the surface channel gate are disposed between the common gate electrode and the common gate insulating layer, and wherein the common gate electrode delivers a gate voltage common to the buried channel gate and the surface channel gate; wherein the buried channel dopant region is adjacent to the photosensitive element and to the surface channel region;