An organic light emitting device comprising: first and second electrodes (10, 20); a first emitting part including a first emitting layer, the first emitting part provided between the first and second electrodes (10, 20), and the first emitting layer having at least two emitting layers (151, 153, 155) including a blue color emitting layer; a second emitting part including a second emitting layer, the second emitting part provided between the first emitting part and the second electrode, and the second emitting layer having at least two emitting layers (253, 255, 257) including an emitting layer (253, 255, 257) for emitting light having wavelength longer than that of the blue color emitting layer; a third emitting part including a third emitting layer, the third emitting part provided between the second emitting part and the second electrode, and the third emitting layer having at least two emitting layers (351, 353, 355) including a blue color emitting layer, and a charge generating layer (410, 420) between the first emitting part and the second emitting part and/or between the second emitting part and the third emitting part, wherein the first emitting layer further comprises a red color or yellow-green color emitting layer (153, 155), wherein the blue color emitting layer in the first emitting layer is positioned closer to the first electrode than the red color or yellow-green color emitting layer (153, 155) in the first emitting layer, and wherein the charge generating layer (410, 420) is a combination of N-type charge generating layer (411, 421) and P-type charge generating layer (412, 422), characterized in that: a second color light emitted from the second emitting part is different from a first color light emitted from the first emitting part and a third color light emitted from the third emitting part, and wherein the N-type charge generating layer (411, 421) includes an N-type non-doped layer (411a, 421a) and an N-type doped layer (411b, 421b) on the N-type non-doped layer (411a, 421a), and the N-type non-doped layer (411a, 421a) includes a host material with an electron transporting ability, and the N-type doped layer (411b, 421b) includes a combination of the same host material as the host material of the N-type non-doped layer (411a, 421a) and a dopant material, wherein the N-type non-doped layer (411a, 421a) is on an upper surface of the first or second emitting layer (150, 250), and an electron transporting layer is not provided between the N-type non-doped layer and the first emitting layer or between the N-type non-doped layer and the second emitting layer. first and second electrodes (10, 20); a first emitting part including a first emitting layer, the first emitting part provided between the first and second electrodes (10, 20), and the first emitting layer having at least two emitting layers (151, 153, 155) including a blue color emitting layer; a second emitting part including a second emitting layer, the second emitting part provided between the first emitting part and the second electrode, and the second emitting layer having at least two emitting layers (253, 255, 257) including an emitting layer (253, 255, 257) for emitting light having wavelength longer than that of the blue color emitting layer; a third emitting part including a third emitting layer, the third emitting part provided between the second emitting part and the second electrode, and the third emitting layer having at least two emitting layers (351, 353, 355) including a blue color emitting layer, and a charge generating layer (410, 420) between the first emitting part and the second emitting part and/or between the second emitting part and the third emitting part, wherein the first emitting layer further comprises a red color or yellow-green color emitting layer (153, 155), wherein the blue color emitting layer in the first emitting layer is positioned closer to the first electrode than the red color or yellow-green color emitting layer (153, 155) in the first emitting layer, and wherein the charge generating layer (410, 420) is a combination of N-type charge generating layer (411, 421) and P-type charge generating layer (412, 422), characterized in that: a second color light emitted from the second emitting part is different from a first color light emitted from the first emitting part and a third color light emitted from the third emitting part, and wherein the N-type charge generating layer (411, 421) includes an N-type non-doped layer (411a, 421a) and an N-type doped layer (411b, 421b) on the N-type non-doped layer (411a, 421a), and the N-type non-doped layer (411a, 421a) includes a host material with an electron transporting ability, and the N-type doped layer (411b, 421b) includes a combination of the same host material as the host material of the N-type non-doped layer (411a, 421a) and a dopant material, wherein the N-type non-doped layer (411a, 421a) is on an upper surface of the first or second emitting layer (150, 250), and an electron transporting layer is not provided between the N-type non-doped layer and the first emitting layer or between the N-type non-doped layer and the second emitting layer.