A light emitting device comprising: a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; characterized in that a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer; a second contact portion electrically connected to the second and third electrodes (81, 83); and a third contact portion provided through the second light emitting structure and comprising a first region electrically connected to the third electrode and a second region making contact with a top surface of the first conductive third semiconductor layer, the first electrode is disposed under the second electrode and the third electrode, and the third electrode is disposed between the first electrode and the fourth electrode. a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer; a second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; characterized in that a first contact portion provided through the first light emitting structure and comprising a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer; a second contact portion electrically connected to the second and third electrodes (81, 83); and a third contact portion provided through the second light emitting structure and comprising a first region electrically connected to the third electrode and a second region making contact with a top surface of the first conductive third semiconductor layer, the first electrode is disposed under the second electrode and the third electrode, and the third electrode is disposed between the first electrode and the fourth electrode.