Optical sensing device comprising: - a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate, - a filter stack arranged on the substrate and covering the photodetector array, the filter stack comprising: - at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror (16, 17) are arranged next to each other in a lateral direction (x) which is parallel to the main plane of extension of the substrate above the first photodetector and a first and a second lower mirror (16, 17) are arranged next to each other in the lateral direction (x) above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction (z) which is perpendicular to the main plane of extension of the substrate than the second lower mirrors, - a spacer stack arranged on the first and second lower mirrors (16, 17), and - an upper dielectric mirror arranged on the spacer stack and covering the photodetector array; wherein - the spacer stack, the upper dielectric mirror and the first lower mirrors form first filter channels; - the spacer stack, the upper dielectric mirror and the second lower mirrors form second filter channels; - each of the first and second photodetectors (12, 13) is configured to detect both electromagnetic radiation passed by the first filter channel and electromagnetic radiation passed by the second filter channel; - the first lower mirrors have a first stop-band and the second lower mirrors have a second stop-band; - a first center wavelength of the first stop-band is given by a thickness of mirror layers (20, 21) of the first lower mirrors and a second center wavelength of the second stop-band is given by a thickness of mirror layers (20, 21) of the second lower mirrors; and - the first center wavelength differs from the second center wavelength by at least 1 nm and at most 30 nm. - a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate, - a filter stack arranged on the substrate and covering the photodetector array, the filter stack comprising: - at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror (16, 17) are arranged next to each other in a lateral direction (x) which is parallel to the main plane of extension of the substrate above the first photodetector and a first and a second lower mirror (16, 17) are arranged next to each other in the lateral direction (x) above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction (z) which is perpendicular to the main plane of extension of the substrate than the second lower mirrors, - a spacer stack arranged on the first and second lower mirrors (16, 17), and - an upper dielectric mirror arranged on the spacer stack and covering the photodetector array; wherein - at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror (16, 17) are arranged next to each other in a lateral direction (x) which is parallel to the main plane of extension of the substrate above the first photodetector and a first and a second lower mirror (16, 17) are arranged next to each other in the lateral direction (x) above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction (z) which is perpendicular to the main plane of extension of the substrate than the second lower mirrors, - a spacer stack arranged on the first and second lower mirrors (16, 17), and - an upper dielectric mirror arranged on the spacer stack and covering the photodetector array; wherein - the spacer stack, the upper dielectric mirror and the first lower mirrors form first filter channels; - the spacer stack, the upper dielectric mirror and the second lower mirrors form second filter channels; - each of the first and second photodetectors (12, 13) is configured to detect both electromagnetic radiation passed by the first filter channel and electromagnetic radiation passed by the second filter channel; - the first lower mirrors have a first stop-band and the second lower mirrors have a second stop-band; - a first center wavelength of the first stop-band is given by a thickness of mirror layers (20, 21) of the first lower mirrors and a second center wavelength of the second stop-band is given by a thickness of mirror layers (20, 21) of the second lower mirrors; and - the first center wavelength differs from the second center wavelength by at least 1 nm and at most 30 nm.