A sensing device, comprising: a first bank selector having a first input terminal (112A1) for coupling a first memory cell from a plurality of first memory cells, a second input terminal (112A2) for coupling to a second memory cell from a plurality of second memory cells and an output terminal; a second bank selector having a first input terminal (112B1) for coupling a third memory cell from said plurality of first memory cells, a second input terminal (112B2) for coupling a fourth memory cell from said plurality of second memory cells and an output terminal; a differential sense amplifier having a first input terminal coupled to the output terminal of the first bank selector, and a second input terminal coupled to the output terminal of the second bank selector; a reference current source configured to generate a reference current (Iref); a first sensing selector coupled to the reference current source and the first input terminal of the differential sense amplifier; and a second sensing selector coupled to the reference current source and the second input terminal of the differential sense amplifier; wherein during a verification operation or a margin read operation of a selected first memory cell: a word line is configured to turn on the selected first memory cell; the first bank selector is configured to establish an electrical connection between the first input terminal (112A1) of the first bank selector and the output terminal of the first bank selector; the second bank selector is configured to establish an electrical connection between the second input terminal (112B2) of the second bank selector and the output terminal of the second bank selector; the second sensing selector is configured to establish an electrical connection between the reference current source and the second input terminal of the differential sense amplifier, such that the differential sense amplifier receives a read current generated by the first memory cell at its first input terminal and at its second input terminal receives the reference current (Iref) instead of the read currents generated by the second memory cells. a first bank selector having a first input terminal (112A1) for coupling a first memory cell from a plurality of first memory cells, a second input terminal (112A2) for coupling to a second memory cell from a plurality of second memory cells and an output terminal; a second bank selector having a first input terminal (112B1) for coupling a third memory cell from said plurality of first memory cells, a second input terminal (112B2) for coupling a fourth memory cell from said plurality of second memory cells and an output terminal; a differential sense amplifier having a first input terminal coupled to the output terminal of the first bank selector, and a second input terminal coupled to the output terminal of the second bank selector; a reference current source configured to generate a reference current (Iref); a first sensing selector coupled to the reference current source and the first input terminal of the differential sense amplifier; and a second sensing selector coupled to the reference current source and the second input terminal of the differential sense amplifier; wherein during a verification operation or a margin read operation of a selected first memory cell: a word line is configured to turn on the selected first memory cell; the first bank selector is configured to establish an electrical connection between the first input terminal (112A1) of the first bank selector and the output terminal of the first bank selector; the second bank selector is configured to establish an electrical connection between the second input terminal (112B2) of the second bank selector and the output terminal of the second bank selector; the second sensing selector is configured to establish an electrical connection between the reference current source and the second input terminal of the differential sense amplifier, such that the differential sense amplifier receives a read current generated by the first memory cell at its first input terminal and at its second input terminal receives the reference current (Iref) instead of the read currents generated by the second memory cells.