A solid-state image sensing device comprising: a substrate having a first conductivity type; a first layer having a second conductivity type and provided on and in contact with the substrate; and a second layer having the first conductivity type and provided on the first layer; a gate electrode for transferring a signal charge of the second layer; a transistor (411, 423, 424) provided in a pixel including a drain region, a source region of the first conductivity type and a gate electrode provided on a surface of the second layer; and an element-isolating insulating film, wherein the second layer and the first layer form a photodiode, a plurality of potential barriers of the second conductivity type are provided in the second layer around the photodiode, the plurality of potential barriers surround the photodiode around the entire periphery of the photodiode without an opening, and one of the plurality of potential barriers is provided under the gate electrode of the transistor and under the source region and/or the drain region of the transistor, one of the plurality of potential barriers is provided under the element-isolating insulating film and over the first layer, a buried photodiode is employed as the photodiode, the buried photodiode including a signal-charge storing region of the first conductivity type where the signal charge is stored, characterized in that the doping concentration of the first layer is lower than the doping concentration of the plurality of potential barriers and said one of the plurality of potential barriers that is provided under the gate electrode of the transistor and under the source region and/or the drain region of the transistor is provided with a distance from the surface of said second layer. a substrate having a first conductivity type; a first layer having a second conductivity type and provided on and in contact with the substrate; and a second layer having the first conductivity type and provided on the first layer; a gate electrode for transferring a signal charge of the second layer; a transistor (411, 423, 424) provided in a pixel including a drain region, a source region of the first conductivity type and a gate electrode provided on a surface of the second layer; and an element-isolating insulating film, wherein the second layer and the first layer form a photodiode, a plurality of potential barriers of the second conductivity type are provided in the second layer around the photodiode, the plurality of potential barriers surround the photodiode around the entire periphery of the photodiode without an opening, and one of the plurality of potential barriers is provided under the gate electrode of the transistor and under the source region and/or the drain region of the transistor, one of the plurality of potential barriers is provided under the element-isolating insulating film and over the first layer, a buried photodiode is employed as the photodiode, the buried photodiode including a signal-charge storing region of the first conductivity type where the signal charge is stored, characterized in that the doping concentration of the first layer is lower than the doping concentration of the plurality of potential barriers and said one of the plurality of potential barriers that is provided under the gate electrode of the transistor and under the source region and/or the drain region of the transistor is provided with a distance from the surface of said second layer.