A semiconductor array device (1, 31, 51, 61) having a semiconductor layer of a first conductivity type disposed on a current-blocking layer, the semiconductor layer being partly covered by a dielectric film, the semiconductor layer being divided into a plurality of mutually isolated parts, the semiconductor array device (1, 31, 51, 61) comprising: a first interconnecting pad overlying and electrically coupled to one of the mutually isolated parts of the semiconductor layer; a second interconnecting pad disposed on the dielectric film; a first group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer, having respective electrodes of the first conductivity type that are electrically coupled to the first interconnecting pad by first conductive paths (7, 14, 15, 16) passing through the semiconductor layer, such that a part of the first conductive paths is disposed within the semiconductor layer and a second group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer different from the parts in which the first group of semiconductor circuit elements are disposed, having respective electrodes of the first conductivity type that are electrically coupled to the second interconnecting pad by second conductive paths (18, 19) insulated from the semiconductor layer by the dielectric film, wherein the first group of semiconductor circuit elements are interspersed among the second group of semiconductor circuit elements and at least one of the second conductive paths (18, 19) crosses at least one of the first conductive paths (7, 14, 15, 16) at a point at which said one of the first conductive paths (7, 14, 15, 16) passes through the semiconductor layer. a first interconnecting pad overlying and electrically coupled to one of the mutually isolated parts of the semiconductor layer; a second interconnecting pad disposed on the dielectric film; a first group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer, having respective electrodes of the first conductivity type that are electrically coupled to the first interconnecting pad by first conductive paths (7, 14, 15, 16) passing through the semiconductor layer, such that a part of the first conductive paths is disposed within the semiconductor layer and a second group of semiconductor circuit elements disposed in one or more of the mutually isolated parts of the semiconductor layer different from the parts in which the first group of semiconductor circuit elements are disposed, having respective electrodes of the first conductivity type that are electrically coupled to the second interconnecting pad by second conductive paths (18, 19) insulated from the semiconductor layer by the dielectric film, wherein the first group of semiconductor circuit elements are interspersed among the second group of semiconductor circuit elements and at least one of the second conductive paths (18, 19) crosses at least one of the first conductive paths (7, 14, 15, 16) at a point at which said one of the first conductive paths (7, 14, 15, 16) passes through the semiconductor layer.