Method for the production of a power semiconductor module, - in which a power semiconductor circuit is formed with at least a first contact region (20 - 23) for contacting it electrically, - in which further a contact element (30 - 32) having at least a first contact end (33, 34) is formed for contacting the power semiconductor circuit electrically, - in which at least the first contact end (33, 34) is connected mechanically and electrically to the first contact region (20 - 23) to form a first contact (40 - 43), and - in which a respective contact (40 - 43) is formed via ultrasonic welding, - wherein a sonotrode used for the ultrasonic welding operation is also used to join the contact ends (33, 34) with the contact regions (20 - 22) and thus to join the contacts (40, 42), wherein massive copper or substantially copper-containing current taps are used as contact elements (30 - 32) with a material thickness between approximately 0.1 mm and approximately 3.0 mm and a current-carrying capacity between approximately 50 A and approximately 2000 A, - wherein at least a part of the contact regions (20 - 22) is formed from a DCB substrate with a copper or a substantially copper-containing layer having a material thickness between approximately 0.1 mm and approximately 3.0 mm, - wherein a ultrasonic welding power between approximately 300 W and approximately 10 kW is used, - wherein a normal force on or for the sonotrode between approximately 500 N and approximately 3500 N is used as a joining force, - wherein the first contact ends (33, 34) of the contact elements (30 - 32) are formed with energy direction indicators in the form of elevations at the first contact ends (33, 34) for better force alignment during ultrasonic welding, and wherein the energy direction indicators have at least one of the following: a material thickness between approximately 0.05 mm and approximately 0.50 mm, preferentially between approximately 0.10 mm and approximately 0.20 mm; a diameter between approximately 0.5 mm and approximately 4.0 mm, preferentially between approximately 1.0 mm and approximately 1.5 mm; an area between approximately 0.2 mm 2 and approximately 12.5 mm 2, preferentially between approximately 0.8 mm 2 and approximately 1.8 mm 2. - in which a power semiconductor circuit is formed with at least a first contact region (20 - 23) for contacting it electrically, - in which further a contact element (30 - 32) having at least a first contact end (33, 34) is formed for contacting the power semiconductor circuit electrically, - in which at least the first contact end (33, 34) is connected mechanically and electrically to the first contact region (20 - 23) to form a first contact (40 - 43), and - in which a respective contact (40 - 43) is formed via ultrasonic welding, - wherein a sonotrode used for the ultrasonic welding operation is also used to join the contact ends (33, 34) with the contact regions (20 - 22) and thus to join the contacts (40, 42), wherein massive copper or substantially copper-containing current taps are used as contact elements (30 - 32) with a material thickness between approximately 0.1 mm and approximately 3.0 mm and a current-carrying capacity between approximately 50 A and approximately 2000 A, - wherein at least a part of the contact regions (20 - 22) is formed from a DCB substrate with a copper or a substantially copper-containing layer having a material thickness between approximately 0.1 mm and approximately 3.0 mm, - wherein a ultrasonic welding power between approximately 300 W and approximately 10 kW is used, - wherein a normal force on or for the sonotrode between approximately 500 N and approximately 3500 N is used as a joining force, - wherein the first contact ends (33, 34) of the contact elements (30 - 32) are formed with energy direction indicators in the form of elevations at the first contact ends (33, 34) for better force alignment during ultrasonic welding, and wherein the energy direction indicators have at least one of the following: a material thickness between approximately 0.05 mm and approximately 0.50 mm, preferentially between approximately 0.10 mm and approximately 0.20 mm; a diameter between approximately 0.5 mm and approximately 4.0 mm, preferentially between approximately 1.0 mm and approximately 1.5 mm; an area between approximately 0.2 mm 2 and approximately 12.5 mm 2, preferentially between approximately 0.8 mm 2 and approximately 1.8 mm 2. a material thickness between approximately 0.05 mm and approximately 0.50 mm, preferentially between approximately 0.10 mm and approximately 0.20 mm; a diameter between approximately 0.5 mm and approximately 4.0 mm, preferentially between approximately 1.0 mm and approximately 1.5 mm; an area between approximately 0.2 mm 2 and approximately 12.5 mm 2, preferentially between approximately 0.8 mm 2 and approximately 1.8 mm 2.