A terminal connection structure comprising: a power capacitor; a pair of electrode terminals (6, 7) of the power capacitor comprising a positive terminal and a negative terminal; the semiconductor device provided inside a case; a pair of electrode terminals (21, 22) of the semiconductor device comprising a positive terminal and a negative terminal; and a pair of wiring members (8, 9) each having a flat plate shape and arranged to be adjacent and opposed to each other and connecting the positive terminal of the pair of electrode terminals (6, 7) of the power capacitor with the corresponding positive terminal of the pair of electrode terminals (21, 22) of the semiconductor device and the negative terminal of the pair of electrode terminals (6, 7) of the power capacitor with the corresponding negative terminal of the pair of electrode terminals (21, 22) of the semiconductor device, respectively, the pair of wiring members (8, 9) and the pair of electrode terminals (21, 22) of the semiconductor device being joined to each other characterized in that the electrode terminals (21, 22) of the semiconductor device each have a shape protruding upwardly from a top surface of the case, and the pair of wiring members (8, 9) each comprises a joint (8a, 9a) joined with a respective one of the electrode terminals (21, 22) of the semiconductor device, each one of the joints (8a, 9a) being bent upwardly to be opposed to the shape of the respective one of the electrode terminals (21, 22) of the semiconductor device protruding upwardly from the top surface of the case, such that in the vicinity of the joints, the current flows through each wiring member (8, 9) in a direction opposite to that of the current flowing through the respective electrode terminal (21, 22), thereby reducing the inductance of the terminal connection structure. a power capacitor; a pair of electrode terminals (6, 7) of the power capacitor comprising a positive terminal and a negative terminal; the semiconductor device provided inside a case; a pair of electrode terminals (21, 22) of the semiconductor device comprising a positive terminal and a negative terminal; and a pair of wiring members (8, 9) each having a flat plate shape and arranged to be adjacent and opposed to each other and connecting the positive terminal of the pair of electrode terminals (6, 7) of the power capacitor with the corresponding positive terminal of the pair of electrode terminals (21, 22) of the semiconductor device and the negative terminal of the pair of electrode terminals (6, 7) of the power capacitor with the corresponding negative terminal of the pair of electrode terminals (21, 22) of the semiconductor device, respectively, the pair of wiring members (8, 9) and the pair of electrode terminals (21, 22) of the semiconductor device being joined to each other characterized in that the electrode terminals (21, 22) of the semiconductor device each have a shape protruding upwardly from a top surface of the case, and the pair of wiring members (8, 9) each comprises a joint (8a, 9a) joined with a respective one of the electrode terminals (21, 22) of the semiconductor device, each one of the joints (8a, 9a) being bent upwardly to be opposed to the shape of the respective one of the electrode terminals (21, 22) of the semiconductor device protruding upwardly from the top surface of the case, such that in the vicinity of the joints, the current flows through each wiring member (8, 9) in a direction opposite to that of the current flowing through the respective electrode terminal (21, 22), thereby reducing the inductance of the terminal connection structure.