A light emitting device comprising: a light emitting structure layer comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer and disposed on the light emitting structure layer; an insulating support member under the light emitting structure layer; and a plurality of conductive layers between the light emitting structure layer and the insulating support member, wherein the plurality of conductive layers comprises a third conductive layer between the insulating support member and the light emitting structure layer, a first conductive layer being in contact with the light emitting structure layer, a second conductive layer disposed between the first conductive layer and the third conductive layer, and a bonding layer disposed between the third conductive layer and the insulating support member, wherein the third conductive layer has a width greater than that of the light emitting structure layer and comprises a second contact part disposed further outward from a sidewall of the light emitting structure layer, wherein the third conductive layer comprises a first contact part vertically corresponding to a portion of the first electrode, wherein the lighting emitting device further comprises a second electrode disposed on the second contact part, characterised in that the first and second conductive layers (151 and 161) have a hole therein and the first contact part of the third conductive layer is disposed in the hole and in contact with the second conductivity type semiconductor layer. a light emitting structure layer comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer and disposed on the light emitting structure layer; an insulating support member under the light emitting structure layer; and a plurality of conductive layers between the light emitting structure layer and the insulating support member, wherein the plurality of conductive layers comprises a third conductive layer between the insulating support member and the light emitting structure layer, a first conductive layer being in contact with the light emitting structure layer, a second conductive layer disposed between the first conductive layer and the third conductive layer, and a bonding layer disposed between the third conductive layer and the insulating support member, wherein the third conductive layer has a width greater than that of the light emitting structure layer and comprises a second contact part disposed further outward from a sidewall of the light emitting structure layer, wherein the third conductive layer comprises a first contact part vertically corresponding to a portion of the first electrode, wherein the lighting emitting device further comprises a second electrode disposed on the second contact part, characterised in that the first and second conductive layers (151 and 161) have a hole therein and the first contact part of the third conductive layer is disposed in the hole and in contact with the second conductivity type semiconductor layer.