A solid-state imaging apparatus comprising: a plurality of photoelectric converters arrayed in a two-dimensional pattern of M rows and N columns, wherein the photoelectric converters comprise a pn junction composed of a semiconductor layer of a first conductivity type with low impurity concentration and a semiconductor region of a second conductivity type opposite to the first conductivity type with high impurity concentration; signal lines for reading out outputs from the photoelectric converters, which are electrically connected to the photoelectric converters; an isolation region of the first semiconductor type with high impurity concentration, provided so as to extend along the direction of the columns and rows and formed between adjacent semiconductor regions of the second conductivity type with high impurity concentration on the front surface side of the semiconductor layer of the first conductivity type with low impurity concentration, wherein the isolation region is of a grid shape when viewed from the direction of incidence of light; a first insulating layer, formed on the semiconductor layer of the first conductivity type with low impurity concentration, the semiconductor regions of the second conductivity type with high impurity concentration, and the isolation region; a second insulating layer formed on the first insulating layer; a third insulating layer formed on the second insulating layer; and a metal wire electrically connected to the isolation region through holes formed in the first insulating layer, and set at a reference potential, wherein the metal wire is of grid shape and provided so as to extend between adjacent semiconductor regions of the second conductivity type with high impurity concentration, along the direction of the columns and rows when viewed from the direction of incidence of light, wherein a width of the metal wire is set greater than a distance between adjacent semiconductor regions of the second conductivity type with high impurity concentration, the metal wire is located above the isolation region so as to overlap edges of the semiconductor regions of the second conductivity type with high impurity concentration when viewed from the direction of incidence of light, and wherein the signal lines are provided for respective columns of the photoelectric converters and extend along a direction of the columns, and located above the semiconductor regions of the second conductivity type with high impurity concentration so as to be apart from portions of the metal wire extending along the direction of the columns and intersect with the photoelectric converters when viewed from a direction of incidence of light. a plurality of photoelectric converters arrayed in a two-dimensional pattern of M rows and N columns, wherein the photoelectric converters comprise a pn junction composed of a semiconductor layer of a first conductivity type with low impurity concentration and a semiconductor region of a second conductivity type opposite to the first conductivity type with high impurity concentration; signal lines for reading out outputs from the photoelectric converters, which are electrically connected to the photoelectric converters; an isolation region of the first semiconductor type with high impurity concentration, provided so as to extend along the direction of the columns and rows and formed between adjacent semiconductor regions of the second conductivity type with high impurity concentration on the front surface side of the semiconductor layer of the first conductivity type with low impurity concentration, wherein the isolation region is of a grid shape when viewed from the direction of incidence of light; a first insulating layer, formed on the semiconductor layer of the first conductivity type with low impurity concentration, the semiconductor regions of the second conductivity type with high impurity concentration, and the isolation region; a second insulating layer formed on the first insulating layer; a third insulating layer formed on the second insulating layer; and a metal wire electrically connected to the isolation region through holes formed in the first insulating layer, and set at a reference potential, wherein the metal wire is of grid shape and provided so as to extend between adjacent semiconductor regions of the second conductivity type with high impurity concentration, along the direction of the columns and rows when viewed from the direction of incidence of light, wherein a width of the metal wire is set greater than a distance between adjacent semiconductor regions of the second conductivity type with high impurity concentration, the metal wire is located above the isolation region so as to overlap edges of the semiconductor regions of the second conductivity type with high impurity concentration when viewed from the direction of incidence of light, and wherein the signal lines are provided for respective columns of the photoelectric converters and extend along a direction of the columns, and located above the semiconductor regions of the second conductivity type with high impurity concentration so as to be apart from portions of the metal wire extending along the direction of the columns and intersect with the photoelectric converters when viewed from a direction of incidence of light.