Solar cell, comprising a semiconductor substrate having a front side and a rear side substantially parallel thereto, a front-side metallisation and a rear-side metallisation and three doped regions having two different conductivity types: - on the front side of the semiconductor substrate there is arranged a first doped region of a first conductivity type, which first doped region extends over substantially the entire front side, - on the rear side of the semiconductor substrate there is arranged a second doped region of a second conductivity type opposite to the first conductivity type, which second doped region extends over part of the rear side, and - on the rear side there is arranged a third doped region of the first conductivity type, which third doped region extends over part of the rear side, wherein the front-side metallisation is electrically conductively connected to the first doped region and the rear-side metallisation is electrically conductively connected to the second doped region, and the solar cell has an electrically conductive connection which electrically conductively connects the third doped region to the front-side metallisation and/or to the first doped region, wherein the solar cell has openings which run substantially perpendicularly to the front side of the solar cell and pass through both the first region and the third region, the first and third regions being electrically conductively connected by the opening, characterised in that the front-side metallisation comprises at least one front-side contact face lying approximately parallel to the front side, and the rear-side metallisation comprises at least one rear-side contact face lying approximately parallel to the rear side, and the front-side contact face and the rear-side contact face are each at least 0.5 mm long and at least 0.5 mm wide, wherein the front-side and rear-side contact faces are arranged in such a way that a common notional plane running perpendicularly to the rear side passes through them, and the solar cell is formed in such a way that on the rear side of the solar cell, along a notional rear-side line of intersection between the rear side of the solar cell and the notional plane, there is no electrical connection to the third doped region and no electrical connection to the first doped region, so that on the rear side of the solar cell, along the rear-side line of intersection, there is no electrical contact to the first doped region and to the third doped region, in such a way that an electrically conductive cell connector guided along the rear-side line of intersection on the rear side of the solar cell is in electrically conductive connection solely with the rear-side metallisation and/or with the second doped region. - on the front side of the semiconductor substrate there is arranged a first doped region of a first conductivity type, which first doped region extends over substantially the entire front side, - on the rear side of the semiconductor substrate there is arranged a second doped region of a second conductivity type opposite to the first conductivity type, which second doped region extends over part of the rear side, and - on the rear side there is arranged a third doped region of the first conductivity type, which third doped region extends over part of the rear side,