A composition for polishing silicon wafers, comprising: abrasives; a silicon-wafer polishing removal accelerator being a basic compound; an amido group-containing polymer A; an organic compound B not containing an amido group; and water, the amido group-containing polymer A having, on a main chain, a building block S derived from a monomer represented by General Formula, in the General Formula, R 1 is a hydrogen atom; an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, or an alkylol group having the number of carbon atoms of 1 to 6; an acetyl group; a phenyl group; a benzyl group; a chloro group; a difluoromethyl group; a trifluoromethyl group; or a cyano group, X is (CH 2) n, where n is an integer of 4 to 6, (CH 2) 2 O(CH 2) 2 or (CH 2) 2 S(CH 2) 2, the amido group-containing polymer A having a weight average molecular weight M A and the organic compound B having a weight average molecular weight M B, the molecular weight M A and the molecular weight M B having a relation satisfying 200≤M B <M A, wherein the weight average molecular weights M A and M B are determined by gel permeation chromatography, the organic compound B being one or more non-ionic surfactants selected from the group consisting of polyoxyethylene glycol, polyoxyethylene propyl ether, polyoxyethylene butyl ether, polyoxyethylene pentyl ether, polyoxyethylene hexyl ether, polyoxyethylene octyl ether, polyoxyethylene 2-ethylhexyl ether, polyoxyethylene nonyl ether, polyoxyethylene decyl ether, polyoxyethylene isodecyl ether, polyoxyethylene tridecyl ether, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene isostearyl ether, polyoxyethylene oleyl ether, polyoxyethylene phenyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyoxyethylene dodecyl phenyl ether, polyoxyethylene styrenated phenyl ether, polyoxyethylene laurylamine, polyoxyethylene stearylamine, polyoxyethylene oleylamine, polyoxyethylene monolaurate, polyoxyethylene monostearate, polyoxyethylene distearate, polyoxyethylene monooleate, polyoxyethylene dioleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitol tetraoleate, polyoxyethylene castor oil, and polyoxyethylene hydrogenated castor oil, the content of the organic compound B in the polishing liquid being 0.05% by mass or less, and the ratio (M A /M B) of the weight average molecular weight M A of the amido group-containing polymer A to the weight average molecular weight M B of the organic compound B being ≥ 10. abrasives; a silicon-wafer polishing removal accelerator being a basic compound; an amido group-containing polymer A; an organic compound B not containing an amido group; and water, the amido group-containing polymer A having, on a main chain, a building block S derived from a monomer represented by General Formula, in the General Formula, R 1 is a hydrogen atom; an alkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, or an alkylol group having the number of carbon atoms of 1 to 6; an acetyl group; a phenyl group; a benzyl group; a chloro group; a difluoromethyl group; a trifluoromethyl group; or a cyano group, X is (CH 2) n, where n is an integer of 4 to 6, (CH 2) 2 O(CH 2) 2 or (CH 2) 2 S(CH 2) 2, the amido group-containing polymer A having a weight average molecular weight M A and the organic compound B having a weight average molecular weight M B, the molecular weight M A and the molecular weight M B having a relation satisfying 200≤M B <M A, wherein the weight average molecular weights M A and M B are determined by gel permeation chromatography, the organic compound B being one or more non-ionic surfactants selected from the group consisting of polyoxyethylene glycol, polyoxyethylene propyl ether, polyoxyethylene butyl ether, polyoxyethylene pentyl ether, polyoxyethylene hexyl ether, polyoxyethylene octyl ether, polyoxyethylene 2-ethylhexyl ether, polyoxyethylene nonyl ether, polyoxyethylene decyl ether, polyoxyethylene isodecyl ether, polyoxyethylene tridecyl ether, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene isostearyl ether, polyoxyethylene oleyl ether, polyoxyethylene phenyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyoxyethylene dodecyl phenyl ether, polyoxyethylene styrenated phenyl ether, polyoxyethylene laurylamine, polyoxyethylene stearylamine, polyoxyethylene oleylamine, polyoxyethylene monolaurate, polyoxyethylene monostearate, polyoxyethylene distearate, polyoxyethylene monooleate, polyoxyethylene dioleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitol tetraoleate, polyoxyethylene castor oil, and polyoxyethylene hydrogenated castor oil, the content of the organic compound B in the polishing liquid being 0.05% by mass or less, and the ratio (M A /M B) of the weight average molecular weight M A of the amido group-containing polymer A to the weight average molecular weight M B of the organic compound B being ≥ 10.