Method for forming a suspended membrane (102,302), the method comprising: - depositing a first electrically conductive material above a sacrificial layer and within a boundary trench, wherein the first electrically conductive material forms a corner transition portion above the boundary trench; - removing a portion of the first electrically conductive material, wherein the removing removes at least a portion of uneven topography of the first electrically conductive material; - depositing a second electrically conductive material, the second electrically conductive material extending beyond the boundary trench, and wherein the second electrically conductive material comprises tungsten; - removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material, wherein the first electrically conductive material defines a portion of a sidewall boundary of the cavity; - wherein the suspended membrane is formed as part of a capacitive pressure sensor on top of an integrated circuit; - forming a bottom electrode (104,304) below the suspended membrane; - forming an isolation layer (110,310) above the bottom electrode, wherein this isolation layer is an etch stop layer and comprises silicon nitride; - forming a sealing layer to seal the etch openings, wherein the sealing layer comprises silicon nitride or silicon oxide; characterised by further comprising: - depositing a first adhesive layer prior to the depositing the second electrically conductive material, wherein the first adhesive layer comprises one of titanium or titanium nitride; and - depositing a second adhesive above the second electrically conductive material, wherein the second adhesive layer comprises one of titanium or titanium nitride. - depositing a first electrically conductive material above a sacrificial layer and within a boundary trench, wherein the first electrically conductive material forms a corner transition portion above the boundary trench; - removing a portion of the first electrically conductive material, wherein the removing removes at least a portion of uneven topography of the first electrically conductive material; - depositing a second electrically conductive material, the second electrically conductive material extending beyond the boundary trench, and wherein the second electrically conductive material comprises tungsten; - removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material, wherein the first electrically conductive material defines a portion of a sidewall boundary of the cavity; - wherein the suspended membrane is formed as part of a capacitive pressure sensor on top of an integrated circuit; - forming a bottom electrode (104,304) below the suspended membrane; - forming an isolation layer (110,310) above the bottom electrode, wherein this isolation layer is an etch stop layer and comprises silicon nitride; - forming a sealing layer to seal the etch openings, wherein the sealing layer comprises silicon nitride or silicon oxide; - depositing a first adhesive layer prior to the depositing the second electrically conductive material, wherein the first adhesive layer comprises one of titanium or titanium nitride; and - depositing a second adhesive above the second electrically conductive material, wherein the second adhesive layer comprises one of titanium or titanium nitride.