A light emitting device comprising: a substrate having a first main surface; a plurality of first wiring members (11; 21; 31; 41) that are formed on the first main surface and extend in a first direction; a plurality of second wiring members (12; 22; 32; 42) that are formed on the first main surface and extend in a second direction, each of the second wiring members being segmented into a plurality of second wiring portions (12x; 22x; 32x; 42x); and a plurality of light emitting elements (14; 24) disposed along the second direction, each of the light emitting elements including a first electrode, a second electrode, and a semiconductor stacked-layer structure, the semiconductor stacked-layer structure including a first conductivity type layer, a light emitting layer, and a second conductivity type layer, the first electrode being connected to the first conductivity type layer exposed by removal of part of the second conductivity type layer, the light emitting layer being stacked over the first conductivity type layer, the second electrode being connected to a second conductivity type semiconductor layer, the first electrode and the second electrode being disposed on the same face side of the semiconductor stacked-layer structure, the first electrode being connected to a corresponding one of the first wiring members, the second electrode having a first connection part and a second connection part that is electrically linked to the first connection part by the second electrode, and the first connection part and the second connection part being connected to a corresponding one of the second wiring members and bridging at least two of the segmented second wiring portions in the second direction. a substrate having a first main surface; a plurality of first wiring members (11; 21; 31; 41) that are formed on the first main surface and extend in a first direction; a plurality of second wiring members (12; 22; 32; 42) that are formed on the first main surface and extend in a second direction, each of the second wiring members being segmented into a plurality of second wiring portions (12x; 22x; 32x; 42x); and a plurality of light emitting elements (14; 24) disposed along the second direction, each of the light emitting elements including a first electrode, a second electrode, and a semiconductor stacked-layer structure, the semiconductor stacked-layer structure including a first conductivity type layer, a light emitting layer, and a second conductivity type layer, the first electrode being connected to the first conductivity type layer exposed by removal of part of the second conductivity type layer, the light emitting layer being stacked over the first conductivity type layer, the second electrode being connected to a second conductivity type semiconductor layer, the first electrode and the second electrode being disposed on the same face side of the semiconductor stacked-layer structure, the first electrode being connected to a corresponding one of the first wiring members, the second electrode having a first connection part and a second connection part that is electrically linked to the first connection part by the second electrode, and the first connection part and the second connection part being connected to a corresponding one of the second wiring members and bridging at least two of the segmented second wiring portions in the second direction.