A method for coupling a semiconductor device (2220, 2121) to a target substrate, wherein the semiconductor device includes a first surface and a first electrical contact (2122, 2124) disposed on the first surface, the target substrate includes a second surface and a second electrical contact disposed on the second surface, and the method comprises: depositing uncured underfill material on the second surface, wherein the uncured UF material substantially covers the second surface and substantially encapsulates the second electrical contact; applying first thermal energy to the uncured UF material to pre-cure the uncured UF material; irradiating an excess portion of the pre-cured UF material with a first photon beam to remove the excess portion of the pre-cured UF material and form a planar surface of the pre-cured UF material that at least partially exposes a distal portion of the second electrical contact; positioning the semiconductor device proximate to the target substrate to form a spatial alignment of the first electrical contact with the second electrical contact, wherein the first and the second surfaces are opposed surfaces, and the at least partially exposed distal portion of the second electrical contact is adjacent a distal portion of the first electrical contact; forming an electrical coupling between the semiconductor device and the target substrate by bonding the at least partially exposed distal portion of the second electrical contact to the adjacent distal portion of the first electrical contact; and curing the pre-cured UF material, wherein the cured UF material mechanically stabilizes the electrical coupling between the semiconductor device and the target substrate; wherein bonding the at least partially exposed distal portion of the second electrical contact to the adjacent distal portion of the first electrical contact is induced by second thermal energy generated by a second photon beam irradiating at least one of the semiconductor device or the target substrate; wherein the second photon beam includes a photon pulse with a temporal profile that is selected to control thermal effects associated with the second thermal energy. depositing uncured underfill material on the second surface, wherein the uncured UF material substantially covers the second surface and substantially encapsulates the second electrical contact; applying first thermal energy to the uncured UF material to pre-cure the uncured UF material; irradiating an excess portion of the pre-cured UF material with a first photon beam to remove the excess portion of the pre-cured UF material and form a planar surface of the pre-cured UF material that at least partially exposes a distal portion of the second electrical contact; positioning the semiconductor device proximate to the target substrate to form a spatial alignment of the first electrical contact with the second electrical contact, wherein the first and the second surfaces are opposed surfaces, and the at least partially exposed distal portion of the second electrical contact is adjacent a distal portion of the first electrical contact; forming an electrical coupling between the semiconductor device and the target substrate by bonding the at least partially exposed distal portion of the second electrical contact to the adjacent distal portion of the first electrical contact; and curing the pre-cured UF material, wherein the cured UF material mechanically stabilizes the electrical coupling between the semiconductor device and the target substrate; wherein bonding the at least partially exposed distal portion of the second electrical contact to the adjacent distal portion of the first electrical contact is induced by second thermal energy generated by a second photon beam irradiating at least one of the semiconductor device or the target substrate; wherein the second photon beam includes a photon pulse with a temporal profile that is selected to control thermal effects associated with the second thermal energy.