Apparatus for growing epitaxial layers on one or more wafers by chemical vapor deposition, said apparatus comprising: a reaction chamber; a rotatable spindle; heating means for heating said one or more wafers, said heating means disposed inside said reaction chamber; and a wafer carrier for supporting and transporting said one or more wafers, said wafer carrier being transportable between a deposition position for carrying out said chemical vapor deposition, wherein said wafer carrier is detachably mounted on said rotatable spindle for rotation therewith inside said reaction chamber; and a loading position for loading and unloading said one or more wafers, wherein said wafer carrier is not mounted on said rotatable spindle, wherein, when in said deposition position, said wafer carrier is in direct contact with said spindle, wherein, when in said deposition position, said wafer carrier is supported only by said spindle, wherein, when in said deposition position, said wafer carrier is centrally mounted on said spindle, wherein said wafer carrier has a top surface including one or more cavities for retaining said one or more wafers, and a bottom surface having a central recess for mounting said wafer carrier on said spindle in said deposition position; said spindle having an upper end disposed inside said reaction chamber wherein said upper end of said spindle may be inserted into said central recess of said wafer carrier, and wherein said central recess in said bottom surface of said wafer carrier extends upwards from said bottom surface toward said top surface of said wafer carrier to a recess end point disposed at a higher elevation than the center of gravity of said wafer carrier and at a lower elevation than said top surface of said wafer carrier, whereby said wafer carrier is supported by said spindle above said center of gravity of said wafer carrier. a reaction chamber; a rotatable spindle; heating means for heating said one or more wafers, said heating means disposed inside said reaction chamber; and a wafer carrier for supporting and transporting said one or more wafers, said wafer carrier being transportable between a deposition position for carrying out said chemical vapor deposition, wherein said wafer carrier is detachably mounted on said rotatable spindle for rotation therewith inside said reaction chamber; and a loading position for loading and unloading said one or more wafers, wherein said wafer carrier is not mounted on said rotatable spindle, wherein, when in said deposition position, said wafer carrier is in direct contact with said spindle, wherein, when in said deposition position, said wafer carrier is supported only by said spindle, wherein, when in said deposition position, said wafer carrier is centrally mounted on said spindle, wherein said wafer carrier has a top surface including one or more cavities for retaining said one or more wafers, and a bottom surface having a central recess for mounting said wafer carrier on said spindle in said deposition position; said spindle having an upper end disposed inside said reaction chamber wherein said upper end of said spindle may be inserted into said central recess of said wafer carrier, and wherein said central recess in said bottom surface of said wafer carrier extends upwards from said bottom surface toward said top surface of said wafer carrier to a recess end point disposed at a higher elevation than the center of gravity of said wafer carrier and at a lower elevation than said top surface of said wafer carrier, whereby said wafer carrier is supported by said spindle above said center of gravity of said wafer carrier.