A method for bonding chips to a semiconductor target wafer using a compliant resin, the method comprising: forming an implant region in a transfer substrate 104), wherein: the implant region is formed at a first depth in the transfer substrate and substantially parallel to a top surface of the transfer substrate; and the implant region is adapted to fracture the substrate on applying heat to the transfer substrate; etching a portion of the transfer substrate to form a riser which comprises a portion of the implant region, wherein: the etched portion of the transfer substrate surrounds the riser and is etched to a second depth; and the second depth is greater than the first depth in relation to a surface of the transfer substrate; applying a compliant material to the transfer substrate; securing a chip in (520,604) to the compliant material, wherein the chip is secured to the compliant material above the riser; removing an excess of the compliant material, wherein: the excess of the compliant material comprises material that is not between the riser and the chip; removing the excess of the compliant material leaves a column of the compliant material; and the column of the compliant material is between the riser and the chip; bonding the chip to a target wafer, wherein bonding the chip to the target wafer is performed while the chip is secured to the column of the compliant material; fracturing the transfer substrate at the implant region, such that a residual portion of the riser is separable from the transfer substrate; removing the transfer substrate from the residual portion of the riser, wherein the residual portion of the riser is connected to the column of the compliant material; removing the residual portion of the riser from the column of the compliant material, wherein the residual portion of the riser is removed from the column of the compliant material after removing the transfer substrate from the residual portion of the riser; and removing the column of the compliant material from the chip, wherein removing the column of the compliant material from the chip is performed after removing the residual portion of the riser from the column of the compliant material. forming an implant region in a transfer substrate 104), wherein: the implant region is formed at a first depth in the transfer substrate and substantially parallel to a top surface of the transfer substrate; and the implant region is adapted to fracture the substrate on applying heat to the transfer substrate; etching a portion of the transfer substrate to form a riser which comprises a portion of the implant region, wherein: the etched portion of the transfer substrate surrounds the riser and is etched to a second depth; and the second depth is greater than the first depth in relation to a surface of the transfer substrate; the etched portion of the transfer substrate surrounds the riser and is etched to a second depth; and the second depth is greater than the first depth in relation to a surface of the transfer substrate; applying a compliant material to the transfer substrate; securing a chip in (520,604) to the compliant material, wherein the chip is secured to the compliant material above the riser; removing an excess of the compliant material, wherein: the excess of the compliant material comprises material that is not between the riser and the chip; removing the excess of the compliant material leaves a column of the compliant material; and the column of the compliant material is between the riser and the the excess of the compliant material comprises material that is not between the riser and the chip; removing the excess of the compliant material leaves a column of the compliant material; and the column of the compliant material is between the riser and the chip; bonding the chip to a target wafer, wherein bonding the chip to the target wafer is performed while the chip is secured to the column of the compliant material; fracturing the transfer substrate at the implant region, such that a residual portion of the riser is separable from the transfer substrate; removing the transfer substrate from the residual portion of the riser, wherein the residual portion of the riser is connected to the column of the compliant material; removing the residual portion of the riser from the column of the compliant material, wherein the residual portion of the riser is removed from the column of the compliant material after removing the transfer substrate from the residual portion of the riser; and removing the column of the compliant material from the chip, wherein removing the column of the compliant material from the chip is performed after removing the residual portion of the riser from the column of the compliant material.