A light emitting device comprising: at least one flip chip light emitting diode die comprising first LED semiconductor layers, the first LED semiconductor layers having a top light emitting surface, the first LED semiconductor layers generating light having a first peak wavelength; a first wavelength conversion layer overlying and spaced away from the top light emitting surface of the first LED semiconductor layers; a first optical structure between the first LED semiconductor layers and the wavelength conversion layer and spaced from the wavelength conversion layer by a first gap, the first optical structure reducing a light emission of the first LED semiconductor layers along a normal axis with respect to the top light emitting surface and enhancing the light emission at an angle with respect to the normal axis, producing a first light emission profile, a reflective light-mixing chamber containing the first LED semiconductor layers, first optical structure, and first wavelength conversion layer, wherein the light-mixing chamber comprises a reflective base and at least one reflective side wall, wherein light, having the first light emission profile, generated by the combination of the first LED semiconductor layers and the first optical structure, impinges on the first wavelength conversion layer, and wherein some of the light passes through the first wavelength conversion layer and some of the light is converted to light of a wavelength different from the first peak wavelength, characterised in that the first optical structure comprises a transparent layer formed over the first LED semiconductor layers, wherein the transparent layer has a conical indentation over a center portion of the LED semiconductor layers (30, 60); and in that the lighting device further comprises solid transparent layer affixed to the first LED semiconductor layers and provided between the first LED semiconductor layers and the first optical structure, wherein a thickness of the solid transparent layer is substantially equal to a length of a largest linear dimension of the LED semiconductor layers. at least one flip chip light emitting diode die comprising first LED semiconductor layers, the first LED semiconductor layers having a top light emitting surface, the first LED semiconductor layers generating light having a first peak wavelength; a first wavelength conversion layer overlying and spaced away from the top light emitting surface of the first LED semiconductor layers; a first optical structure between the first LED semiconductor layers and the wavelength conversion layer and spaced from the wavelength conversion layer by a first gap, the first optical structure reducing a light emission of the first LED semiconductor layers along a normal axis with respect to the top light emitting surface and enhancing the light emission at an angle with respect to the normal axis, producing a first light emission profile, a reflective light-mixing chamber containing the first LED semiconductor layers, first optical structure, and first wavelength conversion layer, wherein the light-mixing chamber comprises a reflective base and at least one reflective side wall, wherein light, having the first light emission profile, generated by the combination of the first LED semiconductor layers and the first optical structure, impinges on the first wavelength conversion layer, and wherein some of the light passes through the first wavelength conversion layer and some of the light is converted to light of a wavelength different from the first peak wavelength, characterised in that the first optical structure comprises a transparent layer formed over the first LED semiconductor layers, wherein the transparent layer has a conical indentation over a center portion of the LED semiconductor layers (30, 60); and in that the lighting device further comprises solid transparent layer affixed to the first LED semiconductor layers and provided between the first LED semiconductor layers and the first optical structure, wherein a thickness of the solid transparent layer is substantially equal to a length of a largest linear dimension of the LED semiconductor layers.