A magnetic revolution counter for determining a predefinable number n of revolutions to be determined of an outer magnetic field, generated by a rotating element, or a number n of magnetic poles of a rotating magnet wheel that can be moved past, or a linear magnetic scale that can be moved past, comprising a revolution sensor, which includes magnetic domain wall conductors composed of open spirals or closed, multiply-wound loops, which are formed by a GMR layer stack or a soft magnetic layer comprising locally present TMR layer stacks and in which magnetic 180° domain walls can be introduced and located by measuring the electrical resistance of predefinable spiral or loop sections, whereby - a single domain wall is, or at least two magnetic domain walls are, introduced into the domain wall conductors such that the at least two domain walls (111, 112), by way of means (25, 26) for generating, pinning or deleting, in a defined manner, domain walls, are brought into a defined separation of greater than 360° with respect to one another, based on the change in location thereof from a first to a second position, with a rotation of the outer magnetic field by the angle of greater than 360°, and are permanently thus spaced apart from one another, and - electrical contacts are provided on the domain wall conductors such that the domain wall conductors, located diagonally opposed, are captured by a respective GND contact (70, 71, 72) and VCC contact (80, 81, 82) collectively, or in VCC contact groups and GND contact groups with a multiplex read-out, and separate contacts (91, 93, 95, 97, 99) are provided on each individual domain wall conductor section solely on one side and substantially centrally between the aforementioned GND contact (70, 71, 72) and VCC contact (80, 81, 82), or, with a multiplex read-out, in groups of contacts that contact a plurality of windings as Wheatstone (half bridge) center contacts, and - the aforementioned contacts, together with associated domain wall conductor sections captured thereby, are interconnected to form Wheatstone half bridges that are separate, but can be read out together, wherein the resistance conditions ascertained by the Wheatstone half bridges are all stored as a signal level in a memory in the form of a table, which for the determination of the present revolution number can be continuously compared to tabular target value patterns (10a, 10b, 10c and 10d) stored in a further memory for each permissible revolution i (0 ≤ i ≤ n), and - for the revolution number i to be determined, that for which the measured resistance conditions in the table agree with the target value pattern in the memory, ascertained by a corresponding processing unit, can be output. - a single domain wall is, or at least two magnetic domain walls are, introduced into the domain wall conductors such that the at least two domain walls (111, 112), by way of means (25, 26) for generating, pinning or deleting, in a defined manner, domain walls, are brought into a defined separation of greater than 360° with respect to one another, based on the change in location thereof from a first to a second position, with a rotation of the outer magnetic field by the angle of greater than 360°, and are permanently thus spaced apart from one another, and - electrical contacts are provided on the domain wall conductors such that the domain wall conductors, located diagonally opposed, are captured by a respective GND contact (70, 71, 72) and VCC contact (80, 81, 82) collectively, or in VCC contact groups and GND contact groups with a multiplex read-out, and separate contacts (91, 93, 95, 97, 99) are provided on each individual domain wall conductor section solely on one side and substantially centrally between the aforementioned GND contact (70, 71, 72) and VCC contact (80, 81, 82), or, with a multiplex read-out, in groups of contacts that contact a plurality of windings as Wheatstone (half bridge) center contacts, and - the aforementioned contacts, together with associated domain wall conductor sections captured thereby, are interconnected to form Wheatstone half bridges that are separate, but can be read out together, wherein the resistance conditions ascertained by the Wheatstone half bridges are all stored as a signal level in a memory in the form of a table, which for the determination of the present revolution number can be continuously compared to tabular target value patterns (10a, 10b, 10c and 10d) stored in a further memory for each permissible revolution i (0 ≤ i ≤ n), and - for the revolution number i to be determined, that for which the measured resistance conditions in the table agree with the target value pattern in the memory, ascertained by a corresponding processing unit, can be output.