Method for producing a gas sensor device for detecting at least one gaseous analyte, wherein the method comprises the following steps: providing a sensor main body comprising a semiconductor substrate, in which at least one cavity section is shaped, and a solid electrolyte layer arranged at a first main surface of the semiconductor substrate, wherein the solid electrolyte layer is left free of the semiconductor substrate in the at least one cavity section; producing a signal conductor layer deposited dry-chemically at a semiconductor substrate side of the sensor main body, such that, in the region of the solid electrolyte layer not covered by the semiconductor substrate in the at least one cavity section, at least one cutout section is shaped in the signal conductor layer, in which the signal conductor layer is cut out; and applying at least two measuring electrodes (130, 140) to the solid electrolyte layer by means of a wet-chemical process, wherein a first measuring electrode is arranged in the at least one cutout section of the signal conductor layer and a second measuring electrode is arranged on a solid electrolyte layer side of the sensor main body, wherein in step of producing, the signal conductor layer is deposited dry-chemically and is removed by means of selective laser ablation in the at least one cutout section, wherein the selective laser ablation is performed from the semiconductor substrate side of the sensor main body and/or is performed from the solid electrolyte layer side of the sensor main body through the solid electrolyte layer, wherein the solid electrolyte layer is transparent to laser light used during the laser ablation. providing a sensor main body comprising a semiconductor substrate, in which at least one cavity section is shaped, and a solid electrolyte layer arranged at a first main surface of the semiconductor substrate, wherein the solid electrolyte layer is left free of the semiconductor substrate in the at least one cavity section; producing a signal conductor layer deposited dry-chemically at a semiconductor substrate side of the sensor main body, such that, in the region of the solid electrolyte layer not covered by the semiconductor substrate in the at least one cavity section, at least one cutout section is shaped in the signal conductor layer, in which the signal conductor layer is cut out; and applying at least two measuring electrodes (130, 140) to the solid electrolyte layer by means of a wet-chemical process, wherein a first measuring electrode is arranged in the at least one cutout section of the signal conductor layer and a second measuring electrode is arranged on a solid electrolyte layer side of the sensor main body, wherein in step of producing, the signal conductor layer is deposited dry-chemically and is removed by means of selective laser ablation in the at least one cutout section, wherein the selective laser ablation is performed from the semiconductor substrate side of the sensor main body and/or is performed from the solid electrolyte layer side of the sensor main body through the solid electrolyte layer, wherein the solid electrolyte layer is transparent to laser light used during the laser ablation.