A method of producing a grain-oriented electrical steel strip comprising the following steps: a) smelting a steel melt consisting of (in % by weight) 2.0-4.0% Si, 0.010-0.100% C, up to 0.065% Al and up to 0.02% N, and in each case optionally up to 0.5% Cu, up to 0.060% S and likewise optionally in each case up to 0.3% Cr, Mn, Ni, Mo, P, As, Sn, Sb, Se, Te, B or Bi, the balance being iron and unavoidable impurities; b) casting the steel melt to give a preliminary material, such as a slab, thin slab or a cast strip; c) hot rolling the preliminary material to give a hot strip; d) coiling the hot strip to give a coil; e) optionally annealing the hot strip; f) cold rolling the hot strip in one or more cold rolling steps to give a cold strip; g) oxidation/primary recrystallization annealing of the cold strip, where this step in each case optionally comprises a decarburizing and/or nitriding treatment and where the cold strip after the oxidation/primary recrystallization anneal has an oxide layer on its surface; h) applying an annealing separator layer to the surface of the cold strip having the oxide layer; i) high-temperature annealing of the cold strip coated with the annealing separator to form a forsterite layer on the surface of the calcined cold strip; j) applying an insulation layer to the surface of the cold strip having the forsterite layer; k) finally annealing the cold strip; l) optionally laser-treating the cold strip; characterized in that - a spectrum of the oxide layer present on the surface of the cold strip is recorded after step g) by means of diffuse reflectance Fourier transformation infrared spectroscopy, - the area "area (Fe 2 SiO 4) " is determined by integration for the peak present in the spectrum obtained at 980 cm -1, which represents the Fe 2 SiO 4 molecules present in the oxide layer, - the area "area(αSiO 2)" is determined by integration for the peak present in the spectrum obtained at 1250 cm -1, which represents the αSiO 2 molecules present in the oxide layer and the composition of the steel (step a)), of the cold rolling (step f)) or of the oxidation/primary recrystallization anneal (step g)) or the parameters for the optionally conducted hot strip anneal (step e)) are adjusted such that the area (αSiO 2) and the area (Fe 2 SiO 4) satisfy the condition 0.5 x area (Fe 2 SiO 4) ≤ area (αSiO 2) ≤ 2 x area (Fe 2 SiO 4). a) smelting a steel melt consisting of (in % by weight) 2.0-4.0% Si, 0.010-0.100% C, up to 0.065% Al and up to 0.02% N, and in each case optionally up to 0.5% Cu, up to 0.060% S and likewise optionally in each case up to 0.3% Cr, Mn, Ni, Mo, P, As, Sn, Sb, Se, Te, B or Bi, the balance being iron and unavoidable impurities; b) casting the steel melt to give a preliminary material, such as a slab, thin slab or a cast strip; c) hot rolling the preliminary material to give a hot strip; d) coiling the hot strip to give a coil; e) optionally annealing the hot strip; f) cold rolling the hot strip in one or more cold rolling steps to give a cold strip; g) oxidation/primary recrystallization annealing of the cold strip, where this step in each case optionally comprises a decarburizing and/or nitriding treatment and where the cold strip after the oxidation/primary recrystallization anneal has an oxide layer on its surface; h) applying an annealing separator layer to the surface of the cold strip having the oxide layer; i) high-temperature annealing of the cold strip coated with the annealing separator to form a forsterite layer on the surface of the calcined cold strip; j) applying an insulation layer to the surface of the cold strip having the forsterite layer; k) finally annealing the cold strip; l) optionally laser-treating the cold strip; - a spectrum of the oxide layer present on the surface of the cold strip is recorded after step g) by means of diffuse reflectance Fourier transformation infrared spectroscopy, - the area "area (Fe 2 SiO 4) " is determined by integration for the peak present in the spectrum obtained at 980 cm -1, which represents the Fe 2 SiO 4 molecules present in the oxide layer, - the area "area(αSiO 2)" is determined by integration for the peak present in the spectrum obtained at 1250 cm -1, which represents the αSiO 2 molecules present in the oxide layer