A light emitting device comprising: a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer; a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface; a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer; a first color filter, a first adhesion layer (AD1, AD2) and a second adhesion layer being disposed between the first light emitting part and the second light emitting part, and a second color filter and a third adhesion layer (AD2, AD3) being disposed between the second light emitting part and the third light emitting part; a first contact structure (CT1, CT2) electrically contacting the first surface of the second n-type semiconductor layer; and a second contact structure (CT2, CT3) electrically contacting the second surface of the second n-type semiconductor layer, wherein one of i) the first contact structure extends into the first light emitting part to electrically contact the first n-type semiconductor layer; and the second contact structure extends into the second light emitting part to electrically contact the third n-type semiconductor layer; or ii) the first contact structure extends into the second light emitting part; and the second contact structure extends into the third light emitting part and is electrically coupled with the third n-type semiconductor layer. a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer; a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface; a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer; a first color filter, a first adhesion layer (AD1, AD2) and a second adhesion layer being disposed between the first light emitting part and the second light emitting part, and a second color filter and a third adhesion layer (AD2, AD3) being disposed between the second light emitting part and the third light emitting part; a first contact structure (CT1, CT2) electrically contacting the first surface of the second n-type semiconductor layer; and a second contact structure (CT2, CT3) electrically contacting the second surface of the second n-type semiconductor layer, wherein one of i) the first contact structure extends into the first light emitting part to electrically contact the first n-type semiconductor layer; and the second contact structure extends into the second light emitting part to electrically contact the third n-type semiconductor layer; or ii) the first contact structure extends into the second light emitting part; and i) the first contact structure extends into the first light emitting part to electrically contact the first n-type semiconductor layer; and the second contact structure extends into the second light emitting part to electrically contact the third n-type semiconductor layer; or ii) the first contact structure extends into the second light emitting part; and the second contact structure extends into the third light emitting part and is electrically coupled with the third n-type semiconductor layer.