Method for fabricating a pressure sensor, wherein at least the following method steps are provided for fabrication: - producing a patterned stabilizing element (210, 230, 310, 410) having at least two openings (225, 425) in the surface region of a semiconductor carrier (200, 300, 400, 520), wherein • a second patterned epitaxial layer (755, 805, 960, 1020, 1110, 1220) is applied on the semiconductor carrier, the patterning of said epitaxial layer being produced depending on an exposure and an etching process or a trench process, wherein the stabilizing element is produced by the patterned second epitaxial layer in a second region in the surface region of the semiconductor carrier and the openings allow access to a first region (220, 420, 560) in the semiconductor carrier, said first region having a first doping, and - selectively stripping out at least one portion of the semiconductor material provided with the first doping via the openings in order to produce a porous first region of the semiconductor carrier by means of anodizing or electropolishing, and - producing a membrane (240, 340, 440, 590) above the porous first region by applying a first monocrystalline epitaxial layer (140, 240, 340, 440, 590) to the stabilizing element, wherein the first epitaxial layer, proceeding from at least one portion of the stabilizing element, closes off the at least two openings above the porous first region in a lateral and/or vertical direction, and - producing a cavity (250, 350, 450, 580) below the stabilizing element from at least one portion of the porous first region, wherein the stabilizing element has at least one monocrystalline web (210, 310, 410, 550) above the cavity, and wherein the web has a lateral extent that is smaller than half the depth of the cavity. - producing a patterned stabilizing element (210, 230, 310, 410) having at least two openings (225, 425) in the surface region of a semiconductor carrier (200, 300, 400, 520), • a second patterned epitaxial layer (755, 805, 960, 1020, 1110, 1220) is applied on the semiconductor carrier, the patterning of said epitaxial layer being produced depending on an exposure and an etching process or a trench process, wherein the stabilizing element is produced by the patterned second epitaxial layer in a second region in the surface region of the semiconductor carrier and the openings allow access to a first region (220, 420, 560) in the semiconductor carrier, said first region having a first doping, and - selectively stripping out at least one portion of the semiconductor material provided with the first doping via the openings in order to produce a porous first region of the semiconductor carrier by means of anodizing or electropolishing, and - producing a membrane (240, 340, 440, 590) above the porous first region by applying a first monocrystalline epitaxial layer (140, 240, 340, 440, 590) to the stabilizing element, wherein the first epitaxial layer, proceeding from at least one portion of the stabilizing element, closes off the at least two openings above the porous first region in a lateral and/or vertical direction, and - producing a cavity (250, 350, 450, 580) below the stabilizing element from at least one portion of the porous first region,