A method of manufacturing a tunnel field effect transistor comprising: growing a group III-V compound semiconductor nanowire on a surface of a portion of a first conductivity type of a group IV semiconductor substrate, the first conductivity type being one of n-type and p-type; forming a gate electrode configured to apply an electric field for controlling flow of a carrier between a source electrode and a drain electrode to an interface between the group IV semiconductor substrate and the group III-V compound semiconductor nanowire; forming one of the source electrode and the drain electrode on the group IV semiconductor substrate such that the one of the source electrode and the drain electrode is not in contact with the group III-V compound semiconductor nanowire; and forming the other of the source electrode and the drain electrode on the group III-V compound semiconductor nanowire, wherein the growing further includes: forming a first region by supplying a group III raw material and a group V raw material on the surface, and forming a second region of a second conductivity type being the other of the n-type and the p-type by further supplying the group V raw material and the group III raw material to the first region formed on the surface, the second region being the other of the n-type and the p-type and being continuous from the first region, characterized in that the first region contains both of a first conductivity type dopant and a second conductivity type dopant, the first conductivity type dopant in the first region has a concentration that is equal to or greater than 1×10 14 cm -3 and is smaller than a concentration of the second conductivity type dopant in the first region, and in the forming the first region, either one or both of the first conductivity type dopant and the second conductivity type dopant is provided intermittently while supplying the group III raw material and the group V raw material. growing a group III-V compound semiconductor nanowire on a surface of a portion of a first conductivity type of a group IV semiconductor substrate, the first conductivity type being one of n-type and p-type; forming a gate electrode configured to apply an electric field for controlling flow of a carrier between a source electrode and a drain electrode to an interface between the group IV semiconductor substrate and the group III-V compound semiconductor nanowire; forming one of the source electrode and the drain electrode on the group IV semiconductor substrate such that the one of the source electrode and the drain electrode is not in contact with the group III-V compound semiconductor nanowire; and forming the other of the source electrode and the drain electrode on the group III-V compound semiconductor nanowire, wherein the growing further includes: forming a first region by supplying a group III raw material and a group V raw material on the surface, and forming a second region of a second conductivity type being the other of the n-type and the p-type by further supplying the group V raw material and the group III raw material to the first region formed on the surface, the second region being the other of the n-type and the p-type and being continuous from the first region, forming a first region by supplying a group III raw material and a group V raw material on the surface, and forming a second region of a second conductivity type being the other of the n-type and the p-type by further supplying the group V raw material and the group III raw material to the first region formed on the surface, the second region being the other of the n-type and the p-type and being continuous from the first region, characterized in that the first region contains both of a first conductivity type dopant and a second conductivity type dopant, the first conductivity type dopant in the first region has a concentration that is equal to or greater than 1×10 14 cm -3 and is smaller than a concentration of the second conductivity type dopant in the first region, and in the forming the first region, either one or both of the first conductivity type dopant and the second conductivity type dopant is provided intermittently while supplying the group III raw material and the group V raw material.