mhurhangee/ep-ind-claims huggingface dataset:
Heavy vehicle tyre comprising: - two beads intended to come into contact with a rim respectively via at least one axially outer face, - a radial carcass reinforcement comprising at least one carcass layer wound within each bead around a bead wire having a centre to form a turnup, - an additional circumferential reinforcement, in each bead, comprising at least two additional layers (61, 62) each having a width (L 1, L 2), the additional reinforcement extending radially from a radially inner end (E 1) as far as a radially outer end (E 2) and axially on the outerside of the axially outermost turnup, the at least two additional layers (61, 62) of the additional circumferential reinforcement being juxtaposed, characterized in that the orthogonal projection (P 1) of the radially inner end (E 1) of the additional circumferential reinforcement onto the axially outer face of the bead is radially on the outside of the centre of the bead wire, - the orthogonal projection (P 2) of the radially outer end (E 2) of the additional circumferential reinforcement onto the axially outer face of the bead is intended to come into contact with a point (P' 2) of the rim that is axially on the inside of the point of last contact of the rim when the tyre is mounted on its rim and inflated to a recommended pressure, in that the sum of the widths (l 1, l 2) of the additional layers (61, 62) of the additional circumferential reinforcement is at least equal to 20 mm, the widths being curved widths measured along the profile of the layers in a meridian plane, in that the circumferential tensile tangent stiffness of each additional layer (61, 62) of the additional circumferential reinforcement is at least equal to 250 daN/mm, the circumferential tensile tangent stiffness of an additional layer being the product of the thickness times the tensile modulus of the material of which the additional layer is made, and in that the radial distance (d) between the radially inner end (E 1) and the radially outer end (E 2) of the additional circumferential reinforcement is at most equal to 20 mm. - two beads intended to come into contact with a rim respectively via at least one axially outer face, - a radial carcass reinforcement comprising at least one carcass layer wound within each bead around a bead wire having a centre to form a turnup, - an additional circumferential reinforcement, in each bead, comprising at least two additional layers (61, 62) each having a width (L 1, L 2), the additional reinforcement extending radially from a radially inner end (E 1) as far as a radially outer end (E 2) and axially on the outerside of the axially outermost turnup, the at least two additional layers (61, 62) of the additional circumferential reinforcement being juxtaposed, - the orthogonal projection (P 2) of the radially outer end (E 2) of the additional circumferential reinforcement onto the axially outer face of the bead is intended to come into contact with a point (P' 2) of the rim that is axially on the inside of the point of last contact of the rim when the tyre is mounted on its rim and inflated to a recommended pressure,
An ablation system comprising: a microwave generator; a microwave antenna assembly coupled to the microwave generator, the antenna assembly having a radiating section; and a radiation detector (30, 130, 230) disposed proximally relative to the microwave antenna assembly configured to detect errant microwave radiation radiated by the radiating section along the exterior of the antenna assembly the radiation detector (30, 130, 230) comprising: a receiving antenna (32, 132, 232) adapted to receive microwave energy; at least one rectifier (52, 152, 252) coupled to the receiving antenna adapted to rectify at least a portion of the microwave energy; and a filter (54, 154, 254) coupled to the at least one rectifier (52, 152, 252) and adapted to convert the rectified microwave energy into a detection signal, wherein the generator is coupled to the radiation detector to receive the detection signal. a microwave generator; a microwave antenna assembly coupled to the microwave generator, the antenna assembly having a radiating section; and a radiation detector (30, 130, 230) disposed proximally relative to the microwave antenna assembly configured to detect errant microwave radiation radiated by the radiating section along the exterior of the antenna assembly the radiation detector (30, 130, 230) comprising: a receiving antenna (32, 132, 232) adapted to receive microwave energy; at least one rectifier (52, 152, 252) coupled to the receiving antenna adapted to rectify at least a portion of the microwave energy; and a filter (54, 154, 254) coupled to the at least one rectifier (52, 152, 252) and adapted to convert the rectified microwave energy into a detection signal, wherein the generator is coupled to the radiation detector to receive the detection signal. a receiving antenna (32, 132, 232) adapted to receive microwave energy; at least one rectifier (52, 152, 252) coupled to the receiving antenna adapted to rectify at least a portion of the microwave energy; and a filter (54, 154, 254) coupled to the at least one rectifier (52, 152, 252) and adapted to convert the rectified microwave energy into a detection signal, wherein the generator is coupled to the radiation detector to receive the detection signal.
Protective jacket having at least one through-opening, preferably arranged on a front side, for passing a cord from an inner side to an outer side of the protective jacket, wherein the through-opening is formed between a first cover flap and a second cover flap, wherein the through-opening can be brought into a position of use and into a flat position in which the first cover flap covers the second cover flap arranged opposite thereto, characterised in that, in the use position, a cord is passed through the through-opening, in that, in the flat position, the cord is not passed through the through-opening, in that the protective jacket has a fourth cover flap, in that the second cover flap is arranged between the first and the fourth cover flap (106, 111), and in that the fourth cover flap covers the second cover flap in the flat position and, together with a fifth cover flap, forms a longitudinal slit.
A method for the visual detection of a motor vehicle, which carries with it a source of interference which is capable of impairing the intended function of a radio signal receiver, by means of at least one signal detection device arranged roadside and at least one image acquisition device, comprising the following steps: - detecting at least one interference signal of the interference source and recording at least one time course of a receive signal strength of the interference signal by means of the signal detection device; - determining, on the basis of the recorded time course of the reception signal strength, at least one optimum time or at least an optimum time range at which the motor vehicle which carries the interference source occupies in relation to the image acquisition device a position which enables the identification of the motor vehicle by means of at least one motor vehicle image acquisition of the image acquisition device generated at the optimum time or during the optimum time range by means of a receive signal strength time course processing device; - producing at least one image acquisition of the motor vehicle or of a motor vehicle area of the motor vehicle at the optimum time or during the optimum time range by means of the image acquisition device. - detecting at least one interference signal of the interference source and recording at least one time course of a receive signal strength of the interference signal by means of the signal detection device; - determining, on the basis of the recorded time course of the reception signal strength, at least one optimum time or at least an optimum time range at which the motor vehicle which carries the interference source occupies in relation to the image acquisition device a position which enables the identification of the motor vehicle by means of at least one motor vehicle image acquisition of the image acquisition device generated at the optimum time or during the optimum time range by means of a receive signal strength time course processing device; - producing at least one image acquisition of the motor vehicle or of a motor vehicle area of the motor vehicle at the optimum time or during the optimum time range by means of the image acquisition device.
A method of parallel condensing and vaporizing for a fuel cell system with a condensing / vaporizing apparatus, wherein the condensing-vaporizing apparatus has a condensing cham-ber and an evaporation chamber which are thermally coupled to each other via a heat exchanger in such a way that water vapor contained in the condensation space in an exhaust gas of a fuel cell stack is condensed into water and in the evaporation chamber, a liquid fuel of a two-phase mixture comprising the liquid fuel and a gas phase, is at least partially evaporated to fuel vapor wherein the energy required for evaporation is at least partially provided by waste heat from an exhaust gas of a fuel cell stack of a fuel cell and the associated energy withdrawal from the exhaust gas of a fuel cell stack is used for condensation, characterized in that the gas phase comprises a carrier gas that is CO2.
A gate driving circuit for driving a power conversion switching element by charging and discharging a gate electrode of the switching element, the gate driving circuit comprising: a drive circuit adapted to receive an external signal and to turn ON and OFF the switching element; a temperature detection circuit for detecting a temperature of the switching element; a current source for causing a forward current to flow to the temperature detection circuit; an amplifier circuit including a first operational amplifier adapted to amplify the forward voltage of the temperature detection circuit, and a Zener diode that is disposed at a radiation fin for cooling the switching element provided between the first operational amplifier and a current adjustment circuit (12, 7), the Zener diode adapted to adjust the amplified voltage by subtraction of a breakdown voltage of the Zener diode, such that a magnitude of a change in the forward voltage caused by a change in the temperature of the temperature detection circuit after the amplification by the first operational amplifier is adjusted on the basis of a magnitude of the breakdown voltage of the Zener diode; and the current adjustment circuit (12, 7) adapted to adjust a magnitude of a gate current caused to flow to the gate electrode of the switching element on the basis of the adjusted, amplified forward voltage of the temperature detection circuit and thus on the basis of a change in magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit. a drive circuit adapted to receive an external signal and to turn ON and OFF the switching element; a temperature detection circuit for detecting a temperature of the switching element; a current source for causing a forward current to flow to the temperature detection circuit; an amplifier circuit including a first operational amplifier adapted to amplify the forward voltage of the temperature detection circuit, and a Zener diode that is disposed at a radiation fin for cooling the switching element provided between the first operational amplifier and a current adjustment circuit (12, 7), the Zener diode adapted to adjust the amplified voltage by subtraction of a breakdown voltage of the Zener diode, such that a magnitude of a change in the forward voltage caused by a change in the temperature of the temperature detection circuit after the amplification by the first operational amplifier is adjusted on the basis of a magnitude of the breakdown voltage of the Zener diode; and the current adjustment circuit (12, 7) adapted to adjust a magnitude of a gate current caused to flow to the gate electrode of the switching element on the basis of the adjusted, amplified forward voltage of the temperature detection circuit and thus on the basis of a change in magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit.
A metal cutting tool, comprising - a tool holder body; - a cutting insert mounted in the tool holder body; and - a nozzle for providing coolant fluid to a cutting edge of a metal cutting tool, and being attached to the tool holder body, wherein the nozzle is a clamp pressing against a part of the cutting insert; wherein the nozzle comprises - at least one internal inlet coolant channel (16 1i; 16 2i), - at least one internal outlet coolant channel (172 1i; 17 2i), wherein - the at least one internal inlet coolant channel (16 1i; 16 2i) is connected to a coolant inlet, and - the at least one internal outlet coolant channel (17 1i; 17 2i) is connected to a coolant outlet (19 1i; 19 2i) for directing the coolant fluid to the cutting edge, characterized in that the nozzle further comprises - at least two plenum chambers (20 1; 20 2), wherein each plenum chamber (20 1; 20 2) comprises - at least one inlet opening (21 1i; 21 2i) connecting the at least one internal inlet coolant channel (16 1i; 16 2i) and the plenum chamber (20 1; 20 2), and - at least one outlet opening (22 1i; 22 2i) connecting the at least one internal outlet coolant channel (17 1i; 17 2i) and the plenum chamber (20 1; 20 2), wherein - each of the at least one inlet openings (21 1i; 21 2i) have a cross-sectional area A1 i, and - each of the at least one outlet openings (22 1i; 22 2i) have a cross-sectional area A2 i, wherein - ∑ i = 1 n A 1 i > ∑ i = 1 m A 2 i, where i is an integer, n is the number of inlet openings, and m is the number of outlet openings. - a tool holder body; - a cutting insert mounted in the tool holder body; and - a nozzle for providing coolant fluid to a cutting edge of a metal cutting tool, and being attached to the tool holder body, wherein the nozzle is a clamp pressing against a part of the cutting insert; wherein the nozzle comprises - at least one internal inlet coolant channel (16 1i; 16 2i), - at least one internal outlet coolant channel (172 1i; 17 2i), wherein - the at least one internal inlet coolant channel (16 1i; 16 2i) is connected to a coolant inlet, and - the at least one internal outlet coolant channel (17 1i; 17 2i) is connected to a coolant outlet (19 1i; 19 2i) for directing the coolant fluid to the cutting edge, - at least two plenum chambers (20 1; 20 2), wherein each plenum chamber (20 1; 20 2) comprises - at least one inlet opening (21 1i; 21 2i) connecting the at least one internal inlet coolant channel (16 1i; 16 2i) and the plenum chamber (20 1; 20 2), and - at least one outlet opening (22 1i; 22 2i) connecting the at least one internal outlet coolant channel (17 1i; 17 2i) and the plenum chamber (20 1; 20 2), wherein - each of the at least one inlet openings (21 1i; 21 2i) have a cross-sectional area A1 i, and - each of the at least one outlet openings (22 1i; 22 2i) have a cross-sectional area A2 i, wherein - ∑ i = 1 n A 1 i > ∑ i = 1 m A 2 i, where i is an integer, n is the number of inlet openings, and m is the number of outlet openings.
A semiconductor stack for an optically pumped vertical cavity surface emitting laser comprising: a semiconductor DBR formed on a substrate; and a resonator formed on the semiconductor DBR including active layers (41, 42, 43), wherein each of the active layers (41, 42, 43) includes MQWs (61, 62, 63) and two spacer layers formed one on each surface of the MQWs (61, 62, 63), wherein the MQWs (61, 62, 63) are formed by laminating barrier layers and quantum well layers alternately, the resonator is formed by laminating wide-band gap semiconductor layers (31, 32, 33, 34) and the active layers alternately, wherein the wide-band gap semiconductor layers are carrier block layers, characterized in that: n layers of the wide-band gap semiconductor layers (31, 32, 33, 34) are formed, and a band gap Eg m of an m-th wide-band gap semiconductor layer counting from the substrate and a band gap Eg m-1 of an m-1-th wide-band gap semiconductor layer counting from the substrate satisfy Eg m-1 <Eg m where n and m are integers greater than 2, and 2<m≤n. a semiconductor DBR formed on a substrate; and a resonator formed on the semiconductor DBR including active layers (41, 42, 43), wherein each of the active layers (41, 42, 43) includes MQWs (61, 62, 63) and two spacer layers formed one on each surface of the MQWs (61, 62, 63), wherein the MQWs (61, 62, 63) are formed by laminating barrier layers and quantum well layers alternately, the resonator is formed by laminating wide-band gap semiconductor layers (31, 32, 33, 34) and the active layers alternately, wherein the wide-band gap semiconductor layers are carrier block layers, characterized in that: n layers of the wide-band gap semiconductor layers (31, 32, 33, 34) are formed, and a band gap Eg m of an m-th wide-band gap semiconductor layer counting from the substrate and a band gap Eg m-1 of an m-1-th wide-band gap semiconductor layer counting from the substrate satisfy Eg m-1 <Eg m where n and m are integers greater than 2, and 2<m≤n.
A method of measuring rinse properties of a topical personal care composition from a hair surface, comprising the steps of: i) providing a treatment composition comprising a UV fluorescent dye; ii) taking a first image of the surface; iii) applying the composition of (i) to the surface; iv) taking a second image of the surface; v) rinsing the surface with water; vi) taking a third image of the surface; vii) analysing the images to quantify the amount of treatment composition remaining on the surface after step (v). i) providing a treatment composition comprising a UV fluorescent dye; ii) taking a first image of the surface; iii) applying the composition of (i) to the surface; iv) taking a second image of the surface; v) rinsing the surface with water; vi) taking a third image of the surface; vii) analysing the images to quantify the amount of treatment composition remaining on the surface after step (v).
An inking system for offset printing, comprising: an anilox member, the anilox member having a surface including wells defined therein, the surface configured to receive and carry the ink for transfer to a digital imaging member; an ink supply station in liquid communication with the anilox member to transfer an initial portion of the ink to the surface of the anilox member; and a metering member in contact with the anilox member, the metering member configured to remove excess ink of the initial portion of ink supplied to the anilox member from the surface of the anilox member resulting in a metered layer of ink on the surface; characterized by an overfill roller assembly in rolling contact with the anilox member, the overfill roller assembly including an overfill form roller configured to add an overcoat layer of ink on the metered layer of ink downstream the metering member for transfer of both the metered layer of ink and the overcoat layer of ink to the digital imaging member. an anilox member, the anilox member having a surface including wells defined therein, the surface configured to receive and carry the ink for transfer to a digital imaging member; an ink supply station in liquid communication with the anilox member to transfer an initial portion of the ink to the surface of the anilox member; and a metering member in contact with the anilox member, the metering member configured to remove excess ink of the initial portion of ink supplied to the anilox member from the surface of the anilox member resulting in a metered layer of ink on the surface; characterized by an overfill roller assembly in rolling contact with the anilox member, the overfill roller assembly including an overfill form roller configured to add an overcoat layer of ink on the metered layer of ink downstream the metering member for transfer of both the metered layer of ink and the overcoat layer of ink to the digital imaging member.
An organic light emitting display device comprising: at least two or more light emitting parts (ST1, ST2) each comprising a light emitting layer and an electron transport layer; and a charge generation layer between the at least two or more light emitting parts, wherein the charge generation layer comprises a compound that includes a core with two nitrogen atoms and a functional group having a crystallinity and represented by the following Chemical Formula 1: wherein L 1 includes one among a substituted or unsubstituted arylene group with 6 to 60 carbon atoms, a substituted or unsubstituted heteroarylene group with 3 to 60 carbon atoms, and a single bond, one among R 1 to R 12 binds to L 1, and the others among R 1 to R 12 that do not bind to L 1 include independently one among a substituted or unsubstituted aryl group with 5 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group with 4 to 30 carbon atoms, a halogen group, a nitrile group, heavy hydrogen, and hydrogen, and n includes one among 1 and 2, characterized in that the charge generation layer comprises a P-type charge generation layer and an N-type charge generation layer, and the compound is included in the N-type charge generation layer. at least two or more light emitting parts (ST1, ST2) each comprising a light emitting layer and an electron transport layer; and a charge generation layer between the at least two or more light emitting parts, wherein the charge generation layer comprises a compound that includes a core with two nitrogen atoms and a functional group having a crystallinity and represented by the following Chemical Formula 1: wherein L 1 includes one among a substituted or unsubstituted arylene group with 6 to 60 carbon atoms, a substituted or unsubstituted heteroarylene group with 3 to 60 carbon atoms, and a single bond, one among R 1 to R 12 binds to L 1, and the others among R 1 to R 12 that do not bind to L 1 include independently one among a substituted or unsubstituted aryl group with 5 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group with 4 to 30 carbon atoms, a halogen group, a nitrile group, heavy hydrogen, and hydrogen, and n includes one among 1 and 2, characterized in that the charge generation layer comprises a P-type charge generation layer and an N-type charge generation layer, and the compound is included in the N-type charge generation layer.