A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer, a portion of the reflective electrode provided between the second electrode layer and the second conductive semiconductor layer; a support member (151, 152, 152A, 153, 153A) under the first conductive semiconductor layer and the reflective electrode layer, the support member (151, 152, 152A, 153, 153A) being provided around the first electrode and around the second electrode; a first connection electrode (141, 141A) under the first electrode, the first electrode being provided between the first connection electrode (141, 141A) and the first conductive semiconductor layer, and at least a part of the first connection electrode (141, 141A) being provided within an opening of the support member (151, 152); and a second connection electrode (143, 143A) under the second electrode, the second electrode being provided between the second connection electrode (143, 143A) and the reflective electrode layer, and at least a part of the second connection electrode (143, 143A) being provided within the opening of the support member (151, 152A, 153, 153A), characterized in that the light emitting device further comprises an insulating layer between the support member (151, 152, 152A, 153, 153A) and the reflective electrode layer, the support member (151, 152, 152A, 153, 153A) includes a thermal diffuser therein a lower surface of the support member is aligned on a same horizontal plane with lower surfaces of the first and second connection electrodes (141, 141A, 143, 143A), and the support member (151, 152, 152A, 153, 153A) includes a first support member (151, 152) around the first electrode and a second support member (151, 152A, 153A) around the second electrode, and a slot (152B, 153B) is provided between the first support member (151, 152, 153) and the second support member (151, 152A, 153A). a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer, a portion of the reflective electrode provided between the second electrode layer and the second conductive semiconductor layer; a support member (151, 152, 152A, 153, 153A) under the first conductive semiconductor layer and the reflective electrode layer, the support member (151, 152, 152A, 153, 153A) being provided around the first electrode and around the second electrode; a first connection electrode (141, 141A) under the first electrode, the first electrode being provided between the first connection electrode (141, 141A) and the first conductive semiconductor layer, and at least a part of the first connection electrode (141, 141A) being provided within an opening of the support member (151, 152); and a second connection electrode (143, 143A) under the second electrode, the second electrode being provided between the second connection electrode (143, 143A) and the reflective electrode layer, and at least a part of the second connection electrode (143, 143A) being provided within the opening of the support member (151, 152A, 153, 153A), characterized in that the light emitting device further comprises an insulating layer between the support member (151, 152, 152A, 153, 153A) and the reflective electrode layer, the support member (151, 152, 152A, 153, 153A) includes a thermal diffuser therein a lower surface of the support member is aligned on a same horizontal plane with lower surfaces of the first and second connection electrodes (141, 141A, 143, 143A), and the support member (151, 152, 152A, 153, 153A) includes a first support member (151, 152) around the first electrode and a second support member (151, 152A, 153A) around the second electrode, and a slot (152B, 153B) is provided between the first support member (151, 152, 153) and the second support member (151, 152A, 153A).