An electrical system comprising: a semiconductor switching device; a gate-drive unit electrically coupled to said semiconductor switching device, wherein the gate-drive unit is configured to apply a voltage to a gate terminal of the semiconductor switching device; a controller configured to: indicate to the semiconductor switching device to turn-off; determine system parameters in response to indicating to the semiconductor switching device to turn-off; determine an intermediate gate voltage based at least in part on the system parameters, wherein the intermediate gate voltage is between a turn-off threshold and a turn-off voltage; configure the gate-drive unit to apply the intermediate gate voltage at the gate terminal to suppress dynamic avalanche events; wherein the controller is configured to determine whether to apply the intermediate gate voltage based on the system parameters, wherein determining whether to apply the intermediate gate voltage comprises: determining the voltage applied to the semiconductor switching device prior to turn-off, the current propagating through the semiconductor switching device prior to turn-off, a differential peak voltage of the semiconductor switching device, or a combination thereof; and determining whether the voltage, the current, the differential peak voltage (152, 156, 158), or a combination thereof are within a respective threshold range; and configure the gate-drive unit to apply the turn-off voltage at the gate terminal subsequent to the application of the intermediate gate voltage, wherein the turn-off voltage is applied in response to commutation of a current propagating through the semiconductor switching device. a semiconductor switching device; a gate-drive unit electrically coupled to said semiconductor switching device, wherein the gate-drive unit is configured to apply a voltage to a gate terminal of the semiconductor switching device; a controller configured to: indicate to the semiconductor switching device to turn-off; determine system parameters in response to indicating to the semiconductor switching device to turn-off; determine an intermediate gate voltage based at least in part on the system parameters, wherein the intermediate gate voltage is between a turn-off threshold and a turn-off voltage; configure the gate-drive unit to apply the intermediate gate voltage at the gate terminal to suppress dynamic avalanche events; wherein the controller is configured to determine whether to apply the intermediate gate voltage based on the system parameters, wherein determining whether to apply the intermediate gate voltage comprises: determining the voltage applied to the semiconductor switching device prior to turn-off, the current propagating through the semiconductor switching device prior to turn-off, a differential peak voltage of the semiconductor switching device, or a combination thereof; and determining whether the voltage, the current, the differential peak voltage (152, 156, 158), or a combination thereof are within a respective threshold range; and configure the gate-drive unit to apply the turn-off voltage at the gate terminal subsequent to the application of the intermediate gate voltage, wherein the turn-off voltage is applied in response to commutation of a current propagating through the semiconductor switching device. indicate to the semiconductor switching device to turn-off; determine system parameters in response to indicating to the semiconductor switching device to turn-off; determine an intermediate gate voltage based at least in part on the system parameters, wherein the intermediate gate voltage is between a turn-off threshold and a turn-off voltage; configure the gate-drive unit to apply the intermediate gate voltage at the gate terminal to suppress dynamic avalanche events; wherein the controller is configured to determine whether to apply the intermediate gate voltage based on the system parameters, wherein determining whether to apply the intermediate gate voltage comprises: determining the voltage applied to the semiconductor switching device prior to turn-off, the current propagating through the semiconductor switching device prior to turn-off, a differential peak voltage of the semiconductor switching device, or a combination thereof; and determining whether the voltage, the current, the differential peak voltage (152, 156, 158), or a combination thereof are within a respective threshold range; and determining the voltage applied to the semiconductor switching device prior to turn-off, the current propagating through the semiconductor switching device prior to turn-off, a differential peak voltage of the semiconductor switching device, or a combination thereof; and determining whether the voltage, the current, the differential peak voltage (152, 156, 158), or a combination thereof are within a respective threshold range; and configure the gate-drive unit to apply the turn-off voltage at the gate terminal subsequent to the application of the intermediate gate voltage, wherein the turn-off voltage is applied in response to commutation of a current propagating through the semiconductor switching device.