A packaged Radio Frequency power transistor device, in particular for use in a power amplifier operating in the frequency range from DC up to 3 GHz, the packaged Radio Frequency power transistor device comprising: a component carrier (254, 256), an active semiconductor die comprising a semiconductor transistor having a source, a gate, and a drain, wherein the active semiconductor die is mounted to the component carrier (254, 256), a further active semiconductor die comprising a further semiconductor transistor having a further source, a further gate, and a further drain, wherein the further active semiconductor die is mounted to the component carrier (254, 256), a ground lead being electrically connected to the source by means of a bondwire, a further ground lead being electrically connected to the further source by means of a bondwire, an output lead being electrically connected to the drain, a further output lead being electrically connected to the further drain, a resonance circuit being electrically inserted between the drain and the ground lead, the resonance circuit comprising a series connection of a physically existing inductor and a physically existing blocking capacitor, wherein the inductor is arranged in between the drain and the blocking capacitor; a further resonance circuit being electrically inserted between the further drain and the further ground lead, the further resonance circuit comprising a series connection of a physically existing further inductor and a physically existing further blocking capacitor, wherein the further inductor is arranged in between the further drain and the further blocking capacitor, and a video lead being arranged in between the ground lead and the further ground lead and being electrically connected by means of a bondwire to the resonance circuit at a position in between the inductor and blocking capacitor and being electrically connected by means of a bondwire to the further resonance circuit at a position in between the further inductor and further blocking capacitor, wherein the video lead is configured for being connected to a first contact of a decoupling capacitor and to a first contact of a further decoupling capacitor, and wherein the ground lead is configured for being connected to a second contact of the decoupling capacitor and wherein the further ground lead is configured for being connected to a second contact of the further decoupling capacitor; wherein with respect to a reference plane being spanned by a bottom surface of the component carrier (254, 256), the output lead, the further output lead, the ground lead, the further ground lead, and the video lead are arranged at least approximately at the same height level. a component carrier (254, 256), an active semiconductor die comprising a semiconductor transistor having a source, a gate, and a drain, wherein the active semiconductor die is mounted to the component carrier (254, 256), a further active semiconductor die comprising a further semiconductor transistor having a further source, a further gate, and a further drain, wherein the further active semiconductor die is mounted to the component carrier (254, 256), a ground lead being electrically connected to the source by means of a bondwire, a further ground lead being electrically connected to the further source by means of a bondwire, an output lead being electrically connected to the drain, a further output lead being electrically connected to the further drain, a resonance circuit being electrically inserted between the drain and the ground lead, the resonance circuit comprising a series connection of a physically existing inductor and a physically existing blocking capacitor, wherein the inductor is arranged in between the drain and the blocking capacitor; a further resonance circuit being electrically inserted between the further drain and the further ground lead, the further resonance circuit comprising a series connection of a physically existing further inductor and a physically existing further blocking capacitor, wherein the further inductor is arranged in between the further drain and the further blocking capacitor, and a video lead being arranged in between the ground lead and the further ground lead and being electrically connected by means of a bondwire to the resonance circuit at a position in between the inductor and blocking capacitor and being electrically connected by means of a bondwire to the further resonance circuit at a position in between the further inductor and further blocking capacitor, wherein the video lead is configured for being connected to a first contact of a decoupling capacitor and to a first contact of a further decoupling capacitor, and wherein the ground lead is configured for being connected to a second contact of the decoupling capacitor and wherein the further ground lead is configured for being connected to a second contact of the further decoupling capacitor; wherein with respect to a reference plane being spanned by a bottom surface of the component carrier (254, 256), the output lead, the further output lead, the ground lead, the further ground lead, and the video lead are arranged at least approximately at the same height level.