Stacked multiple solar cell with five part cells comprising - a first part cell, wherein the first part cell consists of germanium or comprises at least 70% germanium, and - a second part cell, wherein the second part cell has a greater band gap than the first part cell, and - a third part cell, wherein the third part cell has a greater band gap than the second part cell, and - each of the part cells (SC1, SC2, SC3) comprises an emitter and a base, and - the second part cell comprises a layer with a connection with at least the elements Ga and In and As and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base, and the lattice constant of the layer is smaller than 5.84 Å, and - the third part cell consists of a layer with a connection with at least the elements Al and Ga and In and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base, and a fourth part cell and a fifth part cell are formed, - no semiconductor bond is formed between two part cells, and - the part cells SC2, SC4, SC5 and SC3 are lattice-matched to one another and the lattice constant of the layer of the third part cell differs from the lattice constant of the layer of the second part cell by less than 0.2%, wherein - in the case of the second part cell the phosphor content of the layer is greater than 1% and less than 45% and the indium content of the layer is less than 50%, and - a metamorphic buffer is formed between the first part cell and the second part cell, wherein the buffer has a sequence of at least three layers and the lattice constant increases from layer to layer in the sequence in the direction of the second part cell, and - the fourth part cell has a greater band gap than the second part cell, but a smaller band gap than the third part cell, and the fourth part cell is arranged between the second part cell and the fifth part cell and the fifth part cell is arranged between the fourth part cell and the third part cell, - the fifth part cell has a greater band gap than the fourth part cell, but a smaller band gap than the third part cell, - the fifth part cell comprises a layer with a connection consisting of at least the elements Ga and In and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base. - a first part cell, wherein the first part cell consists of germanium or comprises at least 70% germanium, and - a second part cell, wherein the second part cell has a greater band gap than the first part cell, and - a third part cell, wherein the third part cell has a greater band gap than the second part cell, and - each of the part cells (SC1, SC2, SC3) comprises an emitter and a base, and - the second part cell comprises a layer with a connection with at least the elements Ga and In and As and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base, and the lattice constant of the layer is smaller than 5.84 Å, and - the third part cell consists of a layer with a connection with at least the elements Al and Ga and In and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base, and - no semiconductor bond is formed between two part cells, and - the part cells SC2, SC4, SC5 and SC3 are lattice-matched to one another and the lattice constant of the layer of the third part cell differs from the lattice constant of the layer of the second part cell by less than 0.2%, wherein - in the case of the second part cell the phosphor content of the layer is greater than 1% and less than 45% and the indium content of the layer is less than 50%, and - a metamorphic buffer is formed between the first part cell and the second part cell, wherein the buffer has a sequence of at least three layers and the lattice constant increases from layer to layer in the sequence in the direction of the second part cell, and - the fourth part cell has a greater band gap than the second part cell, but a smaller band gap than the third part cell, and the fourth part cell is arranged between the second part cell and the fifth part cell and the fifth part cell is arranged between the fourth part cell and the third part cell, - the fifth part cell has a greater band gap than the fourth part cell, but a smaller band gap than the third part cell, - the fifth part cell comprises a layer with a connection consisting of at least the elements Ga and In and P and the thickness of the layer is greater than 100 nm and the layer is formed as part of the emitter and/or as part of the base and/or as part of the spatial charge zone lying between emitter and base.