A movement sensor comprising: a multi-pole ring magnet; a semiconductor substrate; a first magnetic sensor formed on the semiconductor substrate, wherein the first magnetic sensor is configured to produce a first output signal in response to movement of the multi-pole ring magnet; and a second magnetic sensor formed on the semiconductor substrate, wherein a centroid of the first magnetic sensor and a centroid of the second magnetic sensor are separate and radially aligned on the semiconductor substrate relative to the center of the multi-pole ring magnet, wherein the second magnetic sensor is arranged at a predetermined angle with respect to the first magnetic sensor, wherein the second magnetic sensor is configured to produce a second output signal in response to the movement of the multi-pole ring magnet, wherein the predetermined angle is between 0° and 90° exclusive, and wherein the predetermined angle is configured to produce a difference in phase between the first and second output signals in response to the movement of the multi-pole ring magnet; wherein the first magnetic sensor comprises a first magnetic sensing element, a second magnetic sensing element, a third magnetic sensing element, and a fourth magnetic sensing element (46, 48, 50, 52) connected so as to form a first Wheatstone bridge, and wherein the second magnetic sensor comprises a fifth magnetic sensing element, a sixth magnetic sensing element, a seventh magnetic sensing element, and an eighth magnetic sensing element (54, 56, 58, 60) connected so as to form a second Wheatstone bridge; wherein the centroid of the first magnetic sensor is a center of mass of the first magnetic sensing element, second magnetic sensing element, third magnetic sensing element, and fourth magnetic sensing element (46, 48, 50, 52); wherein the centroid of the second magnetic sensor is a center of mass of the fifth magnetic sensing element, sixth magnetic sensing element, seventh magnetic sensing element, and eighth magnetic sensing element (54,56,58,60), and wherein the size and radial alignment of the two magnetic sensors (40, 42) is selected such that they are subjected to a substantially uniform magnetic field. a multi-pole ring magnet; a semiconductor substrate; a first magnetic sensor formed on the semiconductor substrate, wherein the first magnetic sensor is configured to produce a first output signal in response to movement of the multi-pole ring magnet; and a second magnetic sensor formed on the semiconductor substrate, wherein a centroid of the first magnetic sensor and a centroid of the second magnetic sensor are separate and radially aligned on the semiconductor substrate relative to the center of the multi-pole ring magnet, wherein the second magnetic sensor is arranged at a predetermined angle with respect to the first magnetic sensor, wherein the second magnetic sensor is configured to produce a second output signal in response to the movement of the multi-pole ring magnet, wherein the predetermined angle is between 0° and 90° exclusive, and wherein the predetermined angle is configured to produce a difference in phase between the first and second output signals in response to the movement of the multi-pole ring magnet; wherein the first magnetic sensor comprises a first magnetic sensing element, a second magnetic sensing element, a third magnetic sensing element, and a fourth magnetic sensing element (46, 48, 50, 52) connected so as to form a first Wheatstone bridge, and wherein the second magnetic sensor comprises a fifth magnetic sensing element, a sixth magnetic sensing element, a seventh magnetic sensing element, and an eighth magnetic sensing element (54, 56, 58, 60) connected so as to form a second Wheatstone bridge; wherein the centroid of the first magnetic sensor is a center of mass of the first magnetic sensing element, second magnetic sensing element, third magnetic sensing element, and fourth magnetic sensing element (46, 48, 50, 52); wherein the centroid of the second magnetic sensor is a center of mass of the fifth magnetic sensing element, sixth magnetic sensing element, seventh magnetic sensing element, and eighth magnetic sensing element (54,56,58,60), and wherein the size and radial alignment of the two magnetic sensors (40, 42) is selected such that they are subjected to a substantially uniform magnetic field.