A method of using a redundant array of independent disks, RAID, scheme for a solid state drive, SSD, performed by the SSD, the method comprising: a.) organizing flash memory pages of a flash memory chip of the SSD into a RAID line group, b.) writing, for each flash memory page, corresponding RAID line group membership information to a RAID line field of the flash memory page, wherein the RAID line group information is used to identify bad flash memory pages to be excluded from an XOR process used to reconstruct a bad flash memory page of said RAID line group, wherein, for each one of the flash memory pages: o in case the corresponding flash memory page is known to be bad, the flash memory page is not used in the XOR process for reconstructing any flash memory page and the RAID line group membership information of the corresponding flash memory page is set to a first hexadecimal number or a first bit value, ∘ otherwise, the corresponding flash memory page is used in the XOR process and the RAID line group membership information of the corresponding flash memory page is set to a second hexadecimal number or a second bit value, c.) determining, during a reading process of reading the flash memory pages of the flash memory chip executed after step b.), that a further flash memory page besides the flash memory pages already known to be bad is bad, d.) reading out all flash memory pages except those flash memory pages having as the RAID line group membership information the first hexadecimal number or the first bit value and except the further flash memory page, and using a parity page among all read out flash memory pages together with the remaining read out flash memory pages in the XOR process to attempt a reconstruction of the further flash memory page, e.) in case the reconstruction of the further flash memory page fails, setting RAID line group information of the further flash memory page to the first hexadecimal number or the first bit value. a.) organizing flash memory pages of a flash memory chip of the SSD into a RAID line group, b.) writing, for each flash memory page, corresponding RAID line group membership information to a RAID line field of the flash memory page, wherein the RAID line group information is used to identify bad flash memory pages to be excluded from an XOR process used to reconstruct a bad flash memory page of said RAID line group, wherein, for each one of the flash memory pages: o in case the corresponding flash memory page is known to be bad, the flash memory page is not used in the XOR process for reconstructing any flash memory page and the RAID line group membership information of the corresponding flash memory page is set to a first hexadecimal number or a first bit value, ∘ otherwise, the corresponding flash memory page is used in the XOR process and the RAID line group membership information of the corresponding flash memory page is set to a second hexadecimal number or a second bit value, o in case the corresponding flash memory page is known to be bad, the flash memory page is not used in the XOR process for reconstructing any flash memory page and the RAID line group membership information of the corresponding flash memory page is set to a first hexadecimal number or a first bit value, ∘ otherwise, the corresponding flash memory page is used in the XOR process and the RAID line group membership information of the corresponding flash memory page is set to a second hexadecimal number or a second bit value, c.) determining, during a reading process of reading the flash memory pages of the flash memory chip executed after step b.), that a further flash memory page besides the flash memory pages already known to be bad is bad, d.) reading out all flash memory pages except those flash memory pages having as the RAID line group membership information the first hexadecimal number or the first bit value and except the further flash memory page, and using a parity page among all read out flash memory pages together with the remaining read out flash memory pages in the XOR process to attempt a reconstruction of the further flash memory page, e.) in case the reconstruction of the further flash memory page fails, setting RAID line group information of the further flash memory page to the first hexadecimal number or the first bit value.