mhurhangee/ep-ind-claims huggingface dataset:
A process for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride, the process comprising: adding diphenylthiocarbazone and/or triphenylchloromethane to the technical grade trichlorosilane and/or technical grade silicon tetrachloride to form complex macromolecules with impurities in the technical grade trichlorosilane and/or technical grade silicon tetrachloride, the impurities being selected from the group consisting of boron impurities, boron trichloride, metallic impurities, and combinations thereof; distilling the technical grade trichlorosilane and/or technical grade silicon tetrachloride having complex macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottoms comprise complex macromolecules and are removed from the first distillation tops; and distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane and/or silicon tetrachloride and a compound selected from the group consisting of phosphorus chloride, other phosphorus containing compounds, arsenic chloride, other arsenic containing compounds, aluminum compounds, antimony compounds, other metal compounds, metalloid compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane and/or electronic grade silicon tetrachloride. adding diphenylthiocarbazone and/or triphenylchloromethane to the technical grade trichlorosilane and/or technical grade silicon tetrachloride to form complex macromolecules with impurities in the technical grade trichlorosilane and/or technical grade silicon tetrachloride, the impurities being selected from the group consisting of boron impurities, boron trichloride, metallic impurities, and combinations thereof; distilling the technical grade trichlorosilane and/or technical grade silicon tetrachloride having complex macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottoms comprise complex macromolecules and are removed from the first distillation tops; and distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane and/or silicon tetrachloride and a compound selected from the group consisting of phosphorus chloride, other phosphorus containing compounds, arsenic chloride, other arsenic containing compounds, aluminum compounds, antimony compounds, other metal compounds, metalloid compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.
A sealable powder box, comprising an upper casing, a lower casing, an inner casing mounted in the upper casing, a storage box mounted in the lower casing, and a tray arranged in the storage box, wherein the sealable powder box further comprises a gasket, the gasket is arranged in the tray by means of injection molding, or is sandwiched between the tray and the storage box and engaged with the tray, the upper casing and the inner casing are axially slidable and radially rotatable relative to each other in predetermined ranges, the storage box is engaged in the lower casing and threadingly connected with the upper casing, characterised in that the inner casing and the tray are rotatably connected with the lower casing by a pin and in that a top part of the inner casing penetrates a top part of the upper casing to be exposed.
A method of forming an electrically conductive joint between a first superconductor (2, 12) and a member (1, 11), the method comprising the steps of: providing (120, 200) a first superconductor (2, 12) having a first bonding surface; providing (100, 210) a member (1, 11) having a second bonding surface, characterised by: positioning (140, 240) a reactive foil (3, 13) between the first superconductor and the member and adjacent to each of the first and second bonding surfaces; positioning (130, 230) a joining material (5-8, 14) between the reactive foil and each of the first and second bonding surfaces; applying pressure (150, 250) so as to compress the member (1, 11), the reactive foil (3, 13) and the first superconductor (2, 12) together; and, initiating (160, 260) a reaction in the reactive foil so as to join the first and second bonding surfaces together. providing (120, 200) a first superconductor (2, 12) having a first bonding surface; providing (100, 210) a member (1, 11) having a second bonding surface, characterised by: positioning (140, 240) a reactive foil (3, 13) between the first superconductor and the member and adjacent to each of the first and second bonding surfaces; positioning (130, 230) a joining material (5-8, 14) between the reactive foil and each of the first and second bonding surfaces; applying pressure (150, 250) so as to compress the member (1, 11), the reactive foil (3, 13) and the first superconductor (2, 12) together; and, initiating (160, 260) a reaction in the reactive foil so as to join the first and second bonding surfaces together. positioning (140, 240) a reactive foil (3, 13) between the first superconductor and the member and adjacent to each of the first and second bonding surfaces; positioning (130, 230) a joining material (5-8, 14) between the reactive foil and each of the first and second bonding surfaces; applying pressure (150, 250) so as to compress the member (1, 11), the reactive foil (3, 13) and the first superconductor (2, 12) together; and, initiating (160, 260) a reaction in the reactive foil so as to join the first and second bonding surfaces together.
A programmable logic controller support device configured to support use of a programmable logic controller controlling a control target, wherein the programmable logic controller support device comprises a storage unit (82, 83, 84) and an arithmetic unit, characterized in that the programmable logic controller is configured to execute a plurality of control programs (340, 342) in each control cycle according to an execution priority set on each of the control programs (340, 342) and an execution cycle that is an integral multiple of the control cycle, the storage unit (82, 83, 84) stores a programmable logic controller support program and the plurality of control programs (340, 342) therein, and the programmable logic controller support program is configured to cause that the arithmetic unit executes total execution time acquisition processing of acquiring a total execution time and output processing of outputting the total execution time, the total execution time being an elapsed time from when the execution cycle is started, when the programmable logic controller executes one of the plurality of control programs (340, 342) according to the execution priority and the execution cycle, until execution of the one of the plurality of control programs (340, 342) is ended in the execution cycle, the total execution time being a time measured in the programmable logic controller or a time estimated in the programmable logic controller support device.
A field effect transistor comprising: a III-Nitride channel layer; a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer; a source electrode electrically coupled to one of the Ill-Nitride layers (16, 18); a drain electrode electrically coupled to one of the III -Nitride layers (16, 18); a gate trench between the source electrode and the drain electrode, the gate trench extending into the channel layer, wherein a bottom of the gate trench is in the channel layer; a gate insulator layer stack (28, 30) for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack (28, 30) comprising: an AIN layer having a thickness in a first thickness range and in contact with one of the III-Nitride layers (16, 18) at the bottom of the gate trench; and an insulator layer, such as SiN, above the AlN layer and having a thickness also in the first thickness range; wherein the gate insulating layer stack (28, 30) fills completely the gate trench and extends above the surface of the barrier layer; wherein said first thickness range is 1-50 nanometers the gate electrode being in a region between the source electrode and the drain electrode and being formed in contact with the insulator layer on top of said insulator layer. a III-Nitride channel layer; a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer; a source electrode electrically coupled to one of the Ill-Nitride layers (16, 18); a drain electrode electrically coupled to one of the III -Nitride layers (16, 18); a gate trench between the source electrode and the drain electrode, the gate trench extending into the channel layer, wherein a bottom of the gate trench is in the channel layer; a gate insulator layer stack (28, 30) for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack (28, 30) comprising: an AIN layer having a thickness in a first thickness range and in contact with one of the III-Nitride layers (16, 18) at the bottom of the gate trench; and an insulator layer, such as SiN, above the AlN layer and having a thickness also in the first thickness range; wherein the gate insulating layer stack (28, 30) fills completely the gate trench and extends above the surface of the barrier layer; wherein said first thickness range is 1-50 nanometers the gate electrode being in a region between the source electrode and the drain electrode and being formed in contact with the insulator layer on top of said insulator layer.
A secondary battery comprising: a can member having an opening; a top cap assembly sealing the opening; a gasket insulating the opening from the top cap assembly; and a hot melt applied to an entire surface of the gasket coupling to the can member, and to an entire surface of the gasket coupling to the top cap assembly, wherein the hot melt has fluidity and viscosity at a predetermined temperature or more and is hardened at a temperature less than the predetermined temperature. a can member having an opening; a top cap assembly sealing the opening; a gasket insulating the opening from the top cap assembly; and a hot melt applied to an entire surface of the gasket coupling to the can member, and to an entire surface of the gasket coupling to the top cap assembly, wherein the hot melt has fluidity and viscosity at a predetermined temperature or more and is hardened at a temperature less than the predetermined temperature.
A titanium alloy particularly suitable for hot forging at a temperature close to the β→α+β polymorphic transition temperature and for heat treatment with heating to a temperature close to said transition temperature, in addition to titanium constituting the majority proportion by weight, the alloy including at least the following elements, in the proportions by weight that are specified: aluminum 4.0% to 7.5% vanadium 3.5% to 5.5% molybdenum 4.5% to 7.5% chromium 1.8% to 3.6% iron 0.2% to 0.5% hafnium 0.1% to 1.1% oxygen 0.1% to 0.3% carbon 0.01% to 0.2% and optionally: - either zirconium in a proportion by weight lying in the range 0.1% to 0.7%, the proportion by weight of hafnium then lying in the range 0.1% to 0.7%, the combined proportion by weight of hafnium plus zirconium not exceeding 1%; - or zirconium in a proportion by weight lying in the range 0.1% to 0.7%, and silicon in a proportion by weight lying in the range 0.05% to 0.25%, the proportion by weight of hafnium then lying in the range 0.1% to 0.7%, the combined proportion by weight of hafnium plus zirconium not exceeding 1%. - either zirconium in a proportion by weight lying in the range 0.1% to 0.7%, the proportion by weight of hafnium then lying in the range 0.1% to 0.7%, the combined proportion by weight of hafnium plus zirconium not exceeding 1%; - or zirconium in a proportion by weight lying in the range 0.1% to 0.7%, and silicon in a proportion by weight lying in the range 0.05% to 0.25%, the proportion by weight of hafnium then lying in the range 0.1% to 0.7%, the combined proportion by weight of hafnium plus zirconium not exceeding 1%.
A microscope (100, 101) having a plurality of optical units (10, 20) each including a filter block (11, 21) between an objective and a tube lens (8, 51), an optical unit closest to the objective in the plurality of optical units (10, 20), having a first filter block provided with an optical filter (11b, 11c) which has a first effective diameter; and an optical unit closest to the tube lens in the plurality of optical units (10, 20), having a second filter block provided with an optical filter (21b, 21c) which has a second effective diameter, characterized in that the second effective diameter is larger than the first effective diameter.
An apparatus for the electrical stimulation of a subject, the apparatus comprising: a first contact member and a second contact member, the first contact member having a first contact surface for one foot of the subject and the second contact member having a second contact surface for a second foot of the subject, each contact surface (16a, 16b) for contacting the plantar surface of a foot of the subject, wherein the first and second contact surfaces (16a, 16b) of the contact members (14a, 14b) are comprised in an electrical circuit; means for providing an electrical stimulation cycle to the foot of the subject comprising supplying an electrical current to the first contact surface and to the second contact surface for the electrical stimulation of the plantar muscles of the feet of the subject, wherein when the subject places a foot on each of the first and second contact surfaces, the subject completes the electrical circuit and the electrical current flows through one foot to the other foot; wherein each contact surface (16a, 16b) is pivoted about a pivot member, the pivot member being disposed between opposing ends or opposing sides thereof, so as to allow the angle of the joints of the foot and ankle of the subject to change during the electrical stimulation cycle. a first contact member and a second contact member, the first contact member having a first contact surface for one foot of the subject and the second contact member having a second contact surface for a second foot of the subject, each contact surface (16a, 16b) for contacting the plantar surface of a foot of the subject, wherein the first and second contact surfaces (16a, 16b) of the contact members (14a, 14b) are comprised in an electrical circuit; means for providing an electrical stimulation cycle to the foot of the subject comprising supplying an electrical current to the first contact surface and to the second contact surface for the electrical stimulation of the plantar muscles of the feet of the subject, wherein when the subject places a foot on each of the first and second contact surfaces, the subject completes the electrical circuit and the electrical current flows through one foot to the other foot; wherein each contact surface (16a, 16b) is pivoted about a pivot member, the pivot member being disposed between opposing ends or opposing sides thereof, so as to allow the angle of the joints of the foot and ankle of the subject to change during the electrical stimulation cycle.
A 3,7-diaminophenothiazine (DAPTZ) compound for use in a method of treatment or prophylaxis of a cognitive or CNS disorder in a patient, wherein said disorder is one which is susceptible to treatment by said DAPTZ compound, which method comprises orally administering to said patient a dosage unit containing said DAPTZ compound in oxidised form as active ingredient, wherein said dosage unit releases at least 50% of said active ingredient within 30 minutes under standard US/EU Pharmacopoeia dissolution conditions.
Method of establishing a data communication between a mobile entity and the Internet via an access point and a trusted connection, comprising the following steps: - Sending a communication request from the mobile entity to an authentication server via the trusted connection requesting establishment of the data communication, - Carrying out an authentication process of the mobile entity at the authentication server based on the communication request, - Sending a communication answer, to establish the data communication, via the trusted connection from the authentication server to the mobile entity based on the result of the authentication process, - Blocking a securing process of securing the data communication, running on the trusted connection, at the mobile entity based on the communication answer, characterized in that the securing process is blocked before it has been started, and the securing process is blocked by the following steps: - Sending a securing request from the mobile entity to the authentication server via the trusted connection requesting establishment of a secure communication tunnel, as the securing process, - Comparing the security request with active data communication via the trusted connection, - Sending a securing answer from the authentication server to the mobile entity to block the securing process. - Sending a communication request from the mobile entity to an authentication server via the trusted connection requesting establishment of the data communication, - Carrying out an authentication process of the mobile entity at the authentication server based on the communication request, - Sending a communication answer, to establish the data communication, via the trusted connection from the authentication server to the mobile entity based on the result of the authentication process, - Blocking a securing process of securing the data communication, running on the trusted connection, at the mobile entity based on the communication answer, characterized in that the securing process is blocked before it has been started, and the securing process is blocked by the following steps: - Sending a securing request from the mobile entity to the authentication server via the trusted connection requesting establishment of a secure communication tunnel, as the securing process, - Comparing the security request with active data communication via the trusted connection, - Sending a securing answer from the authentication server to the mobile entity to block the securing process. - Sending a securing request from the mobile entity to the authentication server via the trusted connection requesting establishment of a secure communication tunnel, as the securing process, - Comparing the security request with active data communication via the trusted connection, - Sending a securing answer from the authentication server to the mobile entity to block the securing process.
A non-therapeutic cosmetic use for promoting Type-17 collagen production of a cosmetic composition comprising pterostilbene or a glycoside thereof as an active ingredient.
Method of controlling a sawing machine having a sawing tool, which is driven by an electric sawing tool drive means having a first frequency converter, and having a saw feed device for moving the driven sawing tool at a feed rate relative to a workpiece to be sawn, wherein on engagement of the sawing tool in the workpiece the feed rate is switched from an idling feed rate to a working feed rate, characterised in that at the first frequency converter there is determined a value of a physical variable which corresponds to the torque transmitted from the sawing tool drive means to the sawing tool or from which a change in that torque can be calculated, and the switchover from the idling feed rate to the working feed rate takes place in dependence upon the value of that physical variable.
Fastening device for fastening a chain-saw guide bar to a drive unit and/or a housing of a chainsaw, having at least one covering unit (20a; 20b; 20c), having at least one fastening unit (18a; 18b; 18c) for fastening the chain-saw guide bar (22a; 22b; 22c) and the covering unit (20a; 20b; 20c) to the drive unit (14a; 14b; 14c) and/or the housing (16a; 16b; 16c), and having at least one securing unit (24a; 24b; 24c) which is intended to secure the fastening unit (18a; 18b; 18c) at least partially to the covering unit (20a; 20b; 20c), wherein the securing unit (24a; 24b; 24c) is in the form of an, in particular at least substantially force-fit-free, force-fitting unit, in particular of a magnetic unit, characterized in that the securing unit (24a; 24b; 24c) has at least one force-fitting element (26a; 26b; 26c) for an, in particular at least substantially force-fit-free, force-fitting connection, in particular for a magnetic connection, to at least one fastening element (28a; 28b; 28c) of the fastening unit (18a; 18b; 18c), wherein the force-fitting element (26a; 26b; 26c) surrounds at least segments of the fastening element (28a; 28b; 28c) in a state of the fastening element (28a; 28b; 28c) in which it is arranged on the covering unit (20a; 20b; 20c), in particular on a covering element (30a; 30b; 30c) of the covering unit (20a; 20b; 20c).
Device for sludge treatment, comprising: - a supporting frame of an external casing defining a treatment chamber provided with: - at least one inlet opening of the sludge to be treated; - at least one discharge opening of the treated sludge; - at least one auger element (8, 9) housed within said treatment chamber, and adapted to move the sludge to be treated along a direction of advancement; and - filtration means located internally to said treatment chamber and surrounding said auger element (8, 9); - at least one anodic element associated with said auger element (8, 9); and - application means for applying a potential difference (18, 23) between said anodic element and said filtration means, generating an electric field adapted to interact with said sludge to be treated to produce an electro-osmotic process; characterized by the fact that it comprises a plurality of anodic elements associated with said auger element (8, 9) and by the fact that said application means for applying a potential difference (18, 23) comprise grounding means associated with said filtration means to define a cathode. - a supporting frame of an external casing defining a treatment chamber provided with: - at least one inlet opening of the sludge to be treated; - at least one discharge opening of the treated sludge; - at least one inlet opening of the sludge to be treated; - at least one discharge opening of the treated sludge; - at least one auger element (8, 9) housed within said treatment chamber, and adapted to move the sludge to be treated along a direction of advancement; and - filtration means located internally to said treatment chamber and surrounding said auger element (8, 9); - at least one anodic element associated with said auger element (8, 9); and - application means for applying a potential difference (18, 23) between said anodic element and said filtration means, generating an electric field adapted to interact with said sludge to be treated to produce an electro-osmotic process;