mhurhangee/ep-ind-claims huggingface dataset:
A three-dimensional molded circuit component, comprising: a base member which includes a metal part and a resin part which are joined; a circuit pattern which is formed on the resin part; a resin thin film; a mounted component which is mounted on the resin thin film, and is electrically connected to the circuit pattern, wherein a thickness of the resin thin film is thinner than that of the surrounding resin part, the circuit pattern is formed on the resin thin film, the mounted component is electrically connected to the circuit pattern formed on the resin thin film by a solder, on the base member, a recess 43 is defined by a side wall formed by the resin part and a base formed by the resin thin film, the mounted component is mounted in the recess, and the resin thin film is formed on the metal part, and which includes one of a thermosetting resin and a photo-curable resin; wherein a thickness of the resin thin film is in the range of 0.01 mm to 0.5 mm; wherein the resin thin film and the resin part are formed of different resins. a base member which includes a metal part and a resin part which are joined; a circuit pattern which is formed on the resin part; a resin thin film; a mounted component which is mounted on the resin thin film, and is electrically connected to the circuit pattern, wherein a thickness of the resin thin film is thinner than that of the surrounding resin part, the circuit pattern is formed on the resin thin film, the mounted component is electrically connected to the circuit pattern formed on the resin thin film by a solder, on the base member, a recess 43 is defined by a side wall formed by the resin part and a base formed by the resin thin film, the mounted component is mounted in the recess, and the resin thin film is formed on the metal part, and which includes one of a thermosetting resin and a photo-curable resin; wherein a thickness of the resin thin film is in the range of 0.01 mm to 0.5 mm; wherein the resin thin film and the resin part are formed of different resins.
A crate, comprising a bottom and two respective pairwise opposing side walls and end walls, wherein the bottom is arch-shaped curving towards the interior of the crate, such that a space between a lower surface of the bottom and a plane defined by a lower end of the crate is provided, wherein the bottom is arch-shaped along a direction of an end wall of the crate, the arch-shaped bottom extending between the opposing side walls characterized in that the bottom comprises a plurality of rectangular vent openings (210, 220), the rectangular vent openings (210, 220) are arranged along a central longitudinal axis parallel to the side walls, and wherein the plurality of rectangular vent openings extends into a central region of the bottom.
Airfoil for a gas turbine, the airfoil comprising an outer shell comprising an inner volume, an inner shell arranged within the inner volume of the outer shell, wherein the inner shell comprises an inner nose section and an inner tail section, wherein a high pressure side of the inner shell is formed along a first surface section between inner nose section and the inner tail section, wherein a low pressure side of the inner shell is formed along a second surface section which is located opposite to the first surface section between inner nose section and the inner tail section, wherein the inner shell is spaced apart from the outer shell such that a first cooling channel is formed along the high pressure side between the inner nose section and the inner tail section, and a second cooling channel is formed along the low pressure side between the inner nose section and the inner tail section, wherein the first cooling channel and the second cooling channel merge into a common cooling channel at the inner tail section, characterized in that a first tail fin arranged between the first cooling channel and the common cooling channel such that a first mass flow rate of the cooling fluid flowing through the first cooling channel is controllable, and a second tail fin arranged between the second cooling channel and the common cooling channel such that a second mass flow rate of the cooling fluid flowing through the second cooling channel is controllable, and the first tail fin comprises at least one first through hole for forming a first fluid passage, and wherein the second tail fin comprises at least one second through hole for forming a second fluid passage.
A method for mitigating the effects of coil collapse on hot strip mill coils without the insertion of mechanical means into the coil eye to limit sagging, the method comprising the steps of: producing a hot rolled steel sheet in a hot strip mill; forming a hot strip coil by coiling said hot rolled steel sheet around a mandrel on a downcoiler; orienting said hot strip coil such that the coil eye axis thereof is in the horizontal direction; removing said hot strip coil from said mandrel/downcoiler; pre-sagging said hot strip coil to create an initial sag by allowing gravity cause the coil to sag in a first specific direction for a first period of time, causing the coil to become pre-sagged; without inserting a mechanical means into the coil eye to limit sagging, modifying the direction of the sag caused by the force of gravity to a direction perpendicular to said first specific direction and allowing gravity to sag said coil in said modified direction for a second period of time; wherein said first period of time and said second period of time are chosen such that said initial sag created during said first period of time is substantially mitigated by said perpendicular sag during said second period of time; and said hot strip coil is cooled enough by the end of said second period of time such that the rate of sagging of said hot strip coil has become negligible. producing a hot rolled steel sheet in a hot strip mill; forming a hot strip coil by coiling said hot rolled steel sheet around a mandrel on a downcoiler; orienting said hot strip coil such that the coil eye axis thereof is in the horizontal direction; removing said hot strip coil from said mandrel/downcoiler; pre-sagging said hot strip coil to create an initial sag by allowing gravity cause the coil to sag in a first specific direction for a first period of time, causing the coil to become pre-sagged; without inserting a mechanical means into the coil eye to limit sagging, modifying the direction of the sag caused by the force of gravity to a direction perpendicular to said first specific direction and allowing gravity to sag said coil in said modified direction for a second period of time; wherein said first period of time and said second period of time are chosen such that said initial sag created during said first period of time is substantially mitigated by said perpendicular sag during said second period of time; and said hot strip coil is cooled enough by the end of said second period of time such that the rate of sagging of said hot strip coil has become negligible.
A method of manufacturing a dual backplate MEMS microphone, the method comprising: providing a wafer having a lower backplate layer, an upper backplate layer, and a diaphragm layer for producing a diaphragm between the lower and upper backplate layers (20, 24); which method is characterised by: the wafer also having a first sacrificial layer atop a second sacrificial layer between the diaphragm layer and upper backplate layer, the wafer being processed by: forming an etch mask with a mask hole on the wafer, the upper backplate layer being between the mask hole and the first sacrificial layer, the upper backplate layer spacing the mask hole from the first sacrificial layer; passing a first etchant through the mask hole to form a void that terminates at the first sacrificial layer; and passing a second etchant through the mask hole and the void to form a shadow hole through the first sacrificial layer. providing a wafer having a lower backplate layer, an upper backplate layer, and a diaphragm layer for producing a diaphragm between the lower and upper backplate layers (20, 24); which method is characterised by: the wafer also having a first sacrificial layer atop a second sacrificial layer between the diaphragm layer and upper backplate layer, the wafer being processed by: forming an etch mask with a mask hole on the wafer, the upper backplate layer being between the mask hole and the first sacrificial layer, the upper backplate layer spacing the mask hole from the first sacrificial layer; passing a first etchant through the mask hole to form a void that terminates at the first sacrificial layer; and passing a second etchant through the mask hole and the void to form a shadow hole through the first sacrificial layer. the wafer also having a first sacrificial layer atop a second sacrificial layer between the diaphragm layer and upper backplate layer, the wafer being processed by: forming an etch mask with a mask hole on the wafer, the upper backplate layer being between the mask hole and the first sacrificial layer, the upper backplate layer spacing the mask hole from the first sacrificial layer; passing a first etchant through the mask hole to form a void that terminates at the first sacrificial layer; and passing a second etchant through the mask hole and the void to form a shadow hole through the first sacrificial layer. forming an etch mask with a mask hole on the wafer, the upper backplate layer being between the mask hole and the first sacrificial layer, the upper backplate layer spacing the mask hole from the first sacrificial layer; passing a first etchant through the mask hole to form a void that terminates at the first sacrificial layer; and passing a second etchant through the mask hole and the void to form a shadow hole through the first sacrificial layer.
Clamping device for clamping a workpiece or a tool or a tool holder on a machine part of a machine tool, having an axial displaceable tension rod, a clamping assembly which can be moved via the tension rod between a clamped position and a released position, a spring arrangement assigned to the tension rod and having several spring units arranged in series to generate the clamping force or retraction force of the clamping assembly and a release unit, by means of which the clamping assembly can be moved into the released position against the force of the spring arrangement via the tension rod, wherein the axial spring deflection of the spring units during compression of the spring arrangement is limited by a stop (46, 49), characterisedin that the spring units contain several rod-like spring elements spaced from one another peripherally and arranged firmly or in hinged manner with their ends in spring holders (27, 28).
A method of forming a semiconductor device, comprising a capacitor; the method comprising: forming a first metal contact element and a laterally adjacent second metal contact element and a first insulating material therebetween directly on a surface of an adjacent layer of the semiconductor device; removing a section of the first insulating material positioned between the first metal contact element and the adjacent second metal contact element to form a channel, wherein removing the section of the first insulating material leaves a layer of the first insulating material covering a first surface of the first metal contact element and a layer of the first insulating material covering a second surface of the second metal contact element, wherein the layers (1116, 1118) of the first insulating material and the surface of the adjacent layer define the channel; and depositing a second insulating material in the channel between the first metal contact element and the second metal contact element, wherein the second insulating material in the channel between the first metal contact element and the second metal contact element fills the channel, and wherein the second insulating material has a second permittivity value that is greater than a first permittivity value of the first insulating material. forming a first metal contact element and a laterally adjacent second metal contact element and a first insulating material therebetween directly on a surface of an adjacent layer of the semiconductor device; removing a section of the first insulating material positioned between the first metal contact element and the adjacent second metal contact element to form a channel, wherein removing the section of the first insulating material leaves a layer of the first insulating material covering a first surface of the first metal contact element and a layer of the first insulating material covering a second surface of the second metal contact element, wherein the layers (1116, 1118) of the first insulating material and the surface of the adjacent layer define the channel; and depositing a second insulating material in the channel between the first metal contact element and the second metal contact element, wherein the second insulating material in the channel between the first metal contact element and the second metal contact element fills the channel, and wherein the second insulating material has a second permittivity value that is greater than a first permittivity value of the first insulating material.
A supporting device for laying tiles comprising: - a base; - a separator element projecting from the base; and - a pusher element adapted to cooperate with the separator element and provided with a planar end adapted to be directed towards the base, wherein the base comprises two flaps arranged at opposite sides with respect to the separator element, wherein the flaps are tilted between each other and form a dihedral angle lower than the straight angle opposite to the separator element; and characterized in that the device further comprises - a washer provided with a pass-through opening configured to be fitted onto the separator element, so as to be interposed between the pusher element and the base; wherein the washer comprises at least a first planar surface directed towards the pusher element and a second surface directed towards the base, wherein the second surface comprises at least a pair of support planes arranged on opposite sides with respect to the pass-through opening, wherein the pair of support planes are tilted between each other and form an additional dihedral angle lower than the straight angle. - a base; - a separator element projecting from the base; and - a pusher element adapted to cooperate with the separator element and provided with a planar end adapted to be directed towards the base, wherein the base comprises two flaps arranged at opposite sides with respect to the separator element, wherein the flaps are tilted between each other and form a dihedral angle lower than the straight angle opposite to the separator element; and characterized in that the device further comprises - a washer provided with a pass-through opening configured to be fitted onto the separator element, so as to be interposed between the pusher element and the base; - a washer provided with a pass-through opening configured to be fitted onto the separator element, so as to be interposed between the pusher element and the base; wherein the washer comprises at least a first planar surface directed towards the pusher element and a second surface directed towards the base, wherein the second surface comprises at least a pair of support planes arranged on opposite sides with respect to the pass-through opening, wherein the pair of support planes are tilted between each other and form an additional dihedral angle lower than the straight angle.
Washing machine comprising a tub provided with a rear base and a lateral surface, wherein a hub is provided at the rear base, in which one or more bearings (10a, 10b) are placed adapted to bear a rotating shaft associated to a rotatable drum contained in the tub, characterized in that said rear base comprises an internal surface smooth and convex.
An implantable facet joint device for use in restoring spinal facet joint function, the device comprising: a cephalad crossbar adapted to extend mediolaterally relative to a spine of a patient, the crossbar having opposite first and second ends; a connector element adapted to connect the crossbar to a first vertebra; a first artificial cephalad bearing member adapted for connection to the first end of the crossbar and adapted to engage a first caudal facet joint element (e.g. 125) connected to a second vertebra; and a second artificial cephalad bearing member adapted for connection to the second end of the crossbar and adapted to engage a second caudal facet joint element (e.g. 125') connected to the second vertebra. a cephalad crossbar adapted to extend mediolaterally relative to a spine of a patient, the crossbar having opposite first and second ends; a connector element adapted to connect the crossbar to a first vertebra; a first artificial cephalad bearing member adapted for connection to the first end of the crossbar and adapted to engage a first caudal facet joint element (e.g. 125) connected to a second vertebra; and a second artificial cephalad bearing member adapted for connection to the second end of the crossbar and adapted to engage a second caudal facet joint element (e.g. 125') connected to the second vertebra.
Method of growing annual crop plants, preferably a cash crop or a practical use crop, on a plot, said method of growing consisting in implementing at least the following successive actions on the plot: - an action of sowing seeds of a plant cover comprising seeds of at least one leguminous plant to which at least one rhizospheric microorganism is applied, said at least one rhizospheric microorganism being selected amongst the rhizospheric microorganisms that are suitable for inoculating plants which are issued from said seeds for plant cover, and the annual crop plants, - after a phase of planting plants issued from the seeds for plant cover, an action of sowing seeds of said annual crop plants, said plants issued from seeds for plant cover being destroyed naturally, chemically or mechanically, and the annual crop plants being inoculated with said at least one rhizospheric microorganism occupying the ground. - an action of sowing seeds of a plant cover comprising seeds of at least one leguminous plant to which at least one rhizospheric microorganism is applied, said at least one rhizospheric microorganism being selected amongst the rhizospheric microorganisms that are suitable for inoculating plants which are issued from said seeds for plant cover, and the annual crop plants, - after a phase of planting plants issued from the seeds for plant cover, an action of sowing seeds of said annual crop plants, said plants issued from seeds for plant cover being destroyed naturally, chemically or mechanically, and the annual crop plants being inoculated with said at least one rhizospheric microorganism occupying the ground.
An integrated circuit located in an apparatus, said integrated circuit comprising circuitry, which, in operation, is configured to perform a process, said process comprising the steps of: generating, for each of a plurality of antenna ports, respective reference signals using information relating to a first cyclic shift index, the first cyclic shift index being associated with a first antenna port of the plurality of antenna ports; and mapping, for each of the plurality of antenna ports, the respective reference signals to frequency resources, wherein, when the first cyclic shift index is less than half of a total number of cyclic shift indexes, the respective reference signals of each of the plurality of antenna ports are mapped to a first frequency resource; and when the first cyclic shift index is greater than or equal to half of the total number of cyclic shift indexes, the respective reference signals of a half of the plurality of antenna ports are mapped to the first frequency resource and the respective reference signals of the remaining half of the plurality of antenna ports are mapped to a second frequency resource that is different from the first frequency resource; and transmitting the mapped respective reference signals. generating, for each of a plurality of antenna ports, respective reference signals using information relating to a first cyclic shift index, the first cyclic shift index being associated with a first antenna port of the plurality of antenna ports; and mapping, for each of the plurality of antenna ports, the respective reference signals to frequency resources, wherein, when the first cyclic shift index is less than half of a total number of cyclic shift indexes, the respective reference signals of each of the plurality of antenna ports are mapped to a first frequency resource; and when the first cyclic shift index is greater than or equal to half of the total number of cyclic shift indexes, the respective reference signals of a half of the plurality of antenna ports are mapped to the first frequency resource and the respective reference signals of the remaining half of the plurality of antenna ports are mapped to a second frequency resource that is different from the first frequency resource; and transmitting the mapped respective reference signals.
A device for obtaining a skin graft, the device comprising: a plurality of plates (202a, 202b, 202c), each plate (202a, 202b, 202c) including an array of openings, said openings being configured such that at least one skin blister can be raised through said openings, wherein at least one of the plurality of plates (202a, 202b, 202c) comprises one or more openings configured to form a cutting edge, the cutting edge being configured to interact with the at least one skin blister raised through the one or more openings and wherein the at least two plates are configured to be movable, in a lateral direction, relative to each other; a mechanism for raising at least one blister through aligned openings of the plates (202a, 202b, 202c); and a plurality of coupling members in at least one of the plurality of plates (202a, 202b, 202c); characterized in that the plurality of coupling members being configured to provide at least one frangible linkage between at least two of the plurality of plates (202a, 202b, 202c), the at least one frangible linkage being configured to maintain the at least two of the plurality of plates in alignment. a plurality of plates (202a, 202b, 202c), each plate (202a, 202b, 202c) including an array of openings, said openings being configured such that at least one skin blister can be raised through said openings, wherein at least one of the plurality of plates (202a, 202b, 202c) comprises one or more openings configured to form a cutting edge, the cutting edge being configured to interact with the at least one skin blister raised through the one or more openings and wherein the at least two plates are configured to be movable, in a lateral direction, relative to each other; a mechanism for raising at least one blister through aligned openings of the plates (202a, 202b, 202c); and a plurality of coupling members in at least one of the plurality of plates (202a, 202b, 202c); characterized in that the plurality of coupling members being configured to provide at least one frangible linkage between at least two of the plurality of plates (202a, 202b, 202c), the at least one frangible linkage being configured to maintain the at least two of the plurality of plates in alignment.