mhurhangee/ep-ind-claims huggingface dataset:
Hair treatment process, which comprises: a) the application to the hair of a composition comprising one or more polymers containing a silicone unit bearing alkoxy-(aminomethyl)-silyl functional groups of formula below: in which: - Z 2 represents a group -CH 2 -NR 3 R 4; - Z 3 represents a group OR 5 or R 6; - R 1 represents a C 1 -C 6 alkyl group, - R 3 represents a hydrogen atom or a group R 7; R 4 represents a C 1 -C 6 alkyl group or a C 5 -C 6 cycloalkyl group; or - R 3 and R 4 possibly forming, with the nitrogen atom that bears them, a 5- to 8-membered heterocycle comprising from 1 to 3 heteroatoms, - R 5, R 6 and R 7, which may be identical or different, represent a C 1 -C 6 alkyl group, and - R a and R b, which may be identical or different, represent a C 1 -C 2 alkyl group, n ranges from 5 to 1000, b) the application to the hair of steam by means of a device that is capable of generating steam, step b) possibly preceding, following or being simultaneous with step a). a) the application to the hair of a composition comprising one or more polymers containing a silicone unit bearing alkoxy-(aminomethyl)-silyl functional groups of formula below: in which: - Z 2 represents a group -CH 2 -NR 3 R 4; - Z 3 represents a group OR 5 or R 6; - R 1 represents a C 1 -C 6 alkyl group, - R 3 represents a hydrogen atom or a group R 7; R 4 represents a C 1 -C 6 alkyl group or a C 5 -C 6 cycloalkyl group; or - R 3 and R 4 possibly forming, with the nitrogen atom that bears them, a 5- to 8-membered heterocycle comprising from 1 to 3 heteroatoms, - R 5, R 6 and R 7, which may be identical or different, represent a C 1 -C 6 alkyl group, and - R a and R b, which may be identical or different, represent a C 1 -C 2 alkyl group, n ranges from 5 to 1000, - Z 2 represents a group -CH 2 -NR 3 R 4; - Z 3 represents a group OR 5 or R 6; - R 1 represents a C 1 -C 6 alkyl group, - R 3 represents a hydrogen atom or a group R 7; R 4 represents a C 1 -C 6 alkyl group or a C 5 -C 6 cycloalkyl group; or - R 3 and R 4 possibly forming, with the nitrogen atom that bears them, a 5- to 8-membered heterocycle comprising from 1 to 3 heteroatoms, - R 5, R 6 and R 7, which may be identical or different, represent a C 1 -C 6 alkyl group, and - R a and R b, which may be identical or different, represent a C 1 -C 2 alkyl group, b) the application to the hair of steam by means of a device that is capable of generating steam,
An apparatus configured for wireless communication, operable in a long-term evolution, LTE, network utilizing a time-division duplex, TDD, carrier comprising a plurality of TDD subframes (501; 551; 701; 751; 801; 851), the apparatus comprising: a transceiver; a memory; and at least one processor communicatively coupled to the transceiver and the memory, wherein the at least one processor is configured to: utilize the transceiver to communicate one or more pilot or null tones in a data portion of a first TDD subframe (501; 551; 701; 751; 801; 851), wherein the one or more pilot or null tones are used to capture interference from a second TDD subframe (501; 551; 701; 751; 801; 851) communicated by another apparatus; wherein a TDD subframe (501; 551; 701; 751; 801; 851) is a subframe providing communication in both uplink, UL, and downlink, DL, direction; wherein the first TDD subframe (501; 551; 701; 751; 801; 851) is a DL-centric TDD subframe (501; 701; 801) and the second TDD subframe (501; 551; 701; 751; 801; 851) is an UL-centric TDD subframe (551; 751; 851); and wherein the at least one processor is further configured to: utilize the transceiver to receive signaling comprising information configured to indicate whether to adjust a communication of a user equipment, UE,-specific reference signal, UERS, in the DL-centric TDD subframe (501; 701; 801) to a time that is aligned with a time at which a demodulation reference signal, DMRS, of the UL-centric TDD subframe (551; 751; 851) is communicated by said another apparatus. a transceiver; a memory; and at least one processor communicatively coupled to the transceiver and the memory, wherein the at least one processor is configured to: utilize the transceiver to communicate one or more pilot or null tones in a data portion of a first TDD subframe (501; 551; 701; 751; 801; 851), wherein the one or more pilot or null tones are used to capture interference from a second TDD subframe (501; 551; 701; 751; 801; 851) communicated by another apparatus; wherein a TDD subframe (501; 551; 701; 751; 801; 851) is a subframe providing communication in both uplink, UL, and downlink, DL, direction; wherein the first TDD subframe (501; 551; 701; 751; 801; 851) is a DL-centric TDD subframe (501; 701; 801) and the second TDD subframe (501; 551; 701; 751; 801; 851) is an UL-centric TDD subframe (551; 751; 851); and wherein the at least one processor is further configured to: utilize the transceiver to receive signaling comprising information configured to indicate whether to adjust a communication of a user equipment, UE,-specific reference signal, UERS, in the DL-centric TDD subframe (501; 701; 801) to a time that is aligned with a time at which a demodulation reference signal, DMRS, of the UL-centric TDD subframe (551; 751; 851) is communicated by said another apparatus.
Method for assembling a stone on a setting support, the stone being cut to exhibit a table, a crown, a girdle and a pavilion, including the steps of: - providing a substrate coated with a pattern comprising an electrically conductive layer covered with a resin layer, the pattern having an inner contour delimiting a hole through the coated substrate and an outer contour corresponding to the outer contour of the desired setting support; - removing the resin layer; - after dissolution of the resin layer, positioning the stone in the through hole, the stone resting on the electrically conductive layer; and - electrodepositing a metal layer on the electrically conductive layer to form the setting support, in order to make the stone integral with the metal layer. - providing a substrate coated with a pattern comprising an electrically conductive layer covered with a resin layer, the pattern having an inner contour delimiting a hole through the coated substrate and an outer contour corresponding to the outer contour of the desired setting support; - removing the resin layer; - after dissolution of the resin layer, positioning the stone in the through hole, the stone resting on the electrically conductive layer; and - electrodepositing a metal layer on the electrically conductive layer to form the setting support, in order to make the stone integral with the metal layer.
A method for improving the replication of a covalently closed circular plasmid comprising the following steps: a. providing a covalently closed circular plasmid comprising: i. a Pol I-dependent origin of replication, and ii. an insert comprising a structured DNA sequence selected from the group consisting of inverted repeat sequence, direct repeat sequence, homopolymeric repeat sequence, or eukaryotic origin of replication, wherein the structured DNA sequence is located at a distance of less than 1000 bp from the Pol I-dependent origin of replication in the direction of replication; and b. modifying the covalently closed circular plasmid of a. such that the Pol I-dependent origin of replication is replaced with an R6K gamma replication origin whereby the resultant R6K gamma replication origin covalently closed circular plasmid has improved replication selected from the group consisting of reduced production of replication intermediates and increased plasmid copy number relative to the covalently closed circular plasmid of a, wherein the R6K gamma replication origin does not require Pol I, and wherein the structured DNA sequence is located at a distance of less than 1000 bp from the R6K gamma replication origin in the direction of replication. a. providing a covalently closed circular plasmid comprising: i. a Pol I-dependent origin of replication, and ii. an insert comprising a structured DNA sequence selected from the group consisting of inverted repeat sequence, direct repeat sequence, homopolymeric repeat sequence, or eukaryotic origin of replication, wherein the structured DNA sequence is located at a distance of less than 1000 bp from the Pol I-dependent origin of replication in the direction of replication; and i. a Pol I-dependent origin of replication, and ii. an insert comprising a structured DNA sequence selected from the group consisting of inverted repeat sequence, direct repeat sequence, homopolymeric repeat sequence, or eukaryotic origin of replication, wherein the structured DNA sequence is located at a distance of less than 1000 bp from the Pol I-dependent origin of replication in the direction of replication; and b. modifying the covalently closed circular plasmid of a. such that the Pol I-dependent origin of replication is replaced with an R6K gamma replication origin whereby the resultant R6K gamma replication origin covalently closed circular plasmid has improved replication selected from the group consisting of reduced production of replication intermediates and increased plasmid copy number relative to the covalently closed circular plasmid of a, wherein the R6K gamma replication origin does not require Pol I, and wherein the structured DNA sequence is located at a distance of less than 1000 bp from the R6K gamma replication origin in the direction of replication.
An overload handling method for overload handling on a System Architectural Evolution, SAE, system, characterized by comprising: acquiring, by a mobility management entity, MME, in a first pool, load information of a MME in a second pool when said MME in the first pool is overloaded, wherein the second pool has an overlapping area with the first pool, wherein the overlapping area is an area belonging to or connected to multiple pools; confirming, by the MME in the first pool, that the second pool is not overloaded according to the load information, and transferring, by the MME in the first pool, a user equipment, UE, in the overlapping area of the first pool to the MME in the second pool. acquiring, by a mobility management entity, MME, in a first pool, load information of a MME in a second pool when said MME in the first pool is overloaded, wherein the second pool has an overlapping area with the first pool, wherein the overlapping area is an area belonging to or connected to multiple pools; confirming, by the MME in the first pool, that the second pool is not overloaded according to the load information, and transferring, by the MME in the first pool, a user equipment, UE, in the overlapping area of the first pool to the MME in the second pool.
Aluminium alloys suitable for etched and anodized components, which after being extruded to any wide variety of forms for different applications such as house buildings and other building applications is subjected to etching in a conventional alkaline etching bath and subsequent anodizing, comprising in wt%: Si: 0.20 - 0.90 Mg: 0.30 - 0.90 Fe: 0.10 - 0.40 Mn: max 0.20, Ti: max 0.10, and including others or incidental impurities each in the amount of 0.05 wt% max, the total of others and impurities being in the amount of 0.15 wt% max and balance Al, wherein the alloy further comprises Cu and Zn, wherein the content of Cu and Zn of the alloy in wt-% is inside the composition range described by the area defined by points c1,c2, c3, c4, c5 of a Cu-Zn diagram, wherein c1 corresponds to 0.025 wt-% Cu and 0.025 wt-% Zn, c2 corresponds to 0.05 wt-% Cu and 0.0625 wt-%Zn, c3 corresponds to 0.05 wt-% Cu and 0.07 wt-% Zn, c4 corresponds to 0.025 wt-% Cu and 0.07 wt-% Zn, and c5 corresponds to 0.005 wt-% Cu and 0.025 wt-% Zn. Si: 0.20 - 0.90 Mg: 0.30 - 0.90 Fe: 0.10 - 0.40 Mn: max 0.20, Ti: max 0.10, and including others or incidental impurities each in the amount of 0.05 wt% max, the total of others and impurities being in the amount of 0.15 wt% max and balance Al, wherein the alloy further comprises Cu and Zn, wherein the content of Cu and Zn of the alloy in wt-% is inside the composition range described by the area defined by points c1,c2, c3, c4, c5 of a Cu-Zn diagram, wherein c1 corresponds to 0.025 wt-% Cu and 0.025 wt-% Zn, c2 corresponds to 0.05 wt-% Cu and 0.0625 wt-%Zn, c3 corresponds to 0.05 wt-% Cu and 0.07 wt-% Zn, c4 corresponds to 0.025 wt-% Cu and 0.07 wt-% Zn, and c5 corresponds to 0.005 wt-% Cu and 0.025 wt-% Zn.
Fireproof fabric comprising a set of warp threads (C1,... C6) and a set of weft threads, characterized in that: said warp threads (C1,...C6) are arranged in a plurality of warp levels (A, B, C); all said warp levels are bound together by at least one weft thread acting as a binding thread and arranged so as to prevent relative slipping of said levels, and at least one of the set of weft threads and the set of warp threads is formed by elasticized threads, comprising a core of elastically deformable material lined with a fireproof material. said warp threads (C1,...C6) are arranged in a plurality of warp levels (A, B, C); all said warp levels are bound together by at least one weft thread acting as a binding thread and arranged so as to prevent relative slipping of said levels, and at least one of the set of weft threads and the set of warp threads is formed by elasticized threads, comprising a core of elastically deformable material lined with a fireproof material.
A pipe system with pipe sections and a lockable friction joint for adjustments of relative pivotal positioning of the pipe sections of the pipe system on which the friction joint is mounted, wherein the friction joint is mounted on the exterior of the pipe sections of the pipe system; the friction joint comprising: a first joint member with a first arm member, a second joint member with a second arm member, the first and second joint members (11, 15) each having an inner friction surface and pivotal connecting projections respectively, a friction adjustment device comprising an adjustment element situated on an outer surface of the second joint member, and a fixating element for fixating the position of the adjustment device relative to the friction joint, the fixating element being situated on an outer surface of the first joint member, a plurality of friction discs being situated adjacent each other and between the inner friction surfaces of the joint members (11, 15), wherein the friction between the friction discs can be adjusted by means of the adjustment element, each friction disc having at least one friction surface acting on an adjacent friction surface (29, 31) of another element (11, 15, 27) of the friction joint and each friction disc being pivotally coupled to at least one another element (11, 15, 27) of the friction joint, wherein said another element is another friction disc or one of the first or second joint members (11, 15) of the friction joint, wherein each friction disc has a through hole in the middle of the disc configured to allow passage of movable elements through said hole, characterized in that every other friction disc has radially spaced outer locking projections configured to interlock with the pivotal connecting projections of the first joint member, and every further other friction disc has radially spaced inner locking projections configured to interlock with the pivotal connecting projections of the second joint member; wherein the pivotal connecting projections of the first joint member are arranged in a ring formation outside of a diameter of the intermediate friction discs and protruding towards the second joint member, and the pivotal connecting projections of the second joint member are arranged in a ring formation inside of a diameter of the through hole of the intermediate friction discs and protruding towards the first joint member.
Method for the thermomechanical treatment of steel, wherein the starting material is heated to a temperature above the re-crystallization temperature, is austenized, is held for temperature equalization, then deformed and subsequently quenched to martensite and tempered, characterized in that the starting material is round steel rods, whose heating temperature is equalized over the rod length and which are then deformed by cross-rolling, remaining straight, such that the material is twisted in the edge region and so as to create a deformation gradient over the cross section, and wherein, after exceeding the critical degree of deformation, dynamic re-crystallization processes take place; after this, they are reheated above Ac3 in order to then be quenched and tempered.
Swivelling device, comprising a housing, an output shaft which is mounted in the housing and is led out of same, a drive arranged in the housing for swivelling the output shaft, a swivelling element which is connected for conjoint rotation to the output shaft in the region thereof which is led out of the housing, and with a receptacle which is mounted in the swivelling element and is connected thereto, wherein the receptacle can be arranged in different angular positions, wherein the swivelling element has a receiving profile for the receptacle, and the receptacle has a mating profile which corresponds to the receiving profile, wherein the receiving profile and the mating profile are configured in such a manner that said profiles (8, 9) can be arranged in different positions of the receptacle and swivelling element with respect to each other, characterized in that the receptacle has a central portion in a first plane and two lateral portions (11, 12) which are arranged on averted sides of said portion and the planes of which are arranged at identical angles to the first plane, furthermore the respective swivelling element has a central portion and two inner lateral portions (14, 15) which are designed and arranged in a manner corresponding to the portions (10, 11, 12) of the receptacle, furthermore the respective swivelling element has two outer lateral portions (16, 17) which are arranged on sides of the two inner lateral portions (14, 15), which sides are averted from the central portion of the respective swivelling element, wherein planes of the two outer lateral portions (16, 17) are arranged at identical angles to the planes of the inner lateral portions (14, 15), wherein said angles correspond to the angles of the planes between the inner lateral portions (14, 15) and the central portion of the respective swivelling element.
An apparatus comprising: a junction box cover (207c/207e) for a junction box base (206c/206e), the junction box cover comprising: a heat dissipation mechanism (R1a/R2a/R3a/R4a/R5a/R5b/R6a/R6b) configured to be thermally coupled to a junction box component (201/201a/201b/201c/201d) comprising one or more bypass mechanisms (D1/D2/D3/D4) and housed in the junction box base; and circuitry (305, 306), wherein, when the junction box cover is attached to the junction box base, the heat dissipation mechanism is thermally coupled to the junction box component and the circuitry is connected between the junction box component and output conductors (203a/203b) of the junction box. a junction box cover (207c/207e) for a junction box base (206c/206e), the junction box cover comprising: a heat dissipation mechanism (R1a/R2a/R3a/R4a/R5a/R5b/R6a/R6b) configured to be thermally coupled to a junction box component (201/201a/201b/201c/201d) comprising one or more bypass mechanisms (D1/D2/D3/D4) and housed in the junction box base; and circuitry (305, 306), a heat dissipation mechanism (R1a/R2a/R3a/R4a/R5a/R5b/R6a/R6b) configured to be thermally coupled to a junction box component (201/201a/201b/201c/201d) comprising one or more bypass mechanisms (D1/D2/D3/D4) and housed in the junction box base; and circuitry (305, 306), wherein, when the junction box cover is attached to the junction box base, the heat dissipation mechanism is thermally coupled to the junction box component and the circuitry is connected between the junction box component and output conductors (203a/203b) of the junction box.
An LED lamp comprising a driver arrangement, which driver arrangement comprises: - a control unit for controlling the LED lamp according to a received signal (D 10_11) received from a wireless communication arrangement of an LED lighting system; - a phase-cut detector (103A, 103B, 103C) realized to detect a phase-cut input (V cut) to a driver of the driver arrangement; characterized in that the LED lamp comprises a protection circuit realized to prevent operation of the LED lamp with the phase-cut input (V cut) as long as a phase-cut angle of the phase-cut input (V cut) exceeds a critical threshold by preventing an exposure of the LED lamp to the phase-cut input. - a control unit for controlling the LED lamp according to a received signal (D 10_11) received from a wireless communication arrangement of an LED lighting system; - a phase-cut detector (103A, 103B, 103C) realized to detect a phase-cut input (V cut) to a driver of the driver arrangement; characterized in that the LED lamp comprises a protection circuit realized to prevent operation of the LED lamp with the phase-cut input (V cut) as long as a phase-cut angle of the phase-cut input (V cut) exceeds a critical threshold by preventing an exposure of the LED lamp to the phase-cut input.
Apparatus, comprising first means for checking configured to check if a contention based random access is to be performed for a reason different from a beam failure recovery; means for monitoring configured to monitor if a received first reference signal has a received power above a set power threshold and/or a received quality above a set quality threshold; second means for checking configured to check if a reception device is configured to receive a downlink control signal on a first beam corresponding to the first reference signal; means for instructing configured to instruct a transmission device to transmit a preamble of the contention based random access on a first beam if the contention based random access is to be performed for the reason, the received first reference signal has the received power above the set power threshold and/or the received quality above the set quality threshold, and the reception device is configured to receive the downlink control signal on the first beam. first means for checking configured to check if a contention based random access is to be performed for a reason different from a beam failure recovery; means for monitoring configured to monitor if a received first reference signal has a received power above a set power threshold and/or a received quality above a set quality threshold; second means for checking configured to check if a reception device is configured to receive a downlink control signal on a first beam corresponding to the first reference signal; means for instructing configured to instruct a transmission device to transmit a preamble of the contention based random access on a first beam if the contention based random access is to be performed for the reason, the received first reference signal has the received power above the set power threshold and/or the received quality above the set quality threshold, and the reception device is configured to receive the downlink control signal on the first beam.
Detector system to detect or determine at least one specific gas in a gas mixture, comprising at least one first detector (D LP) which continuously monitors said gas mixture to detect a change in said mixture composition, said system comprising at least one second detector (D HP) with ability to determine a concentration of said at least one specific gas in said gas mixture, wherein said second detector (D HP) is arranged to be activated when said first detector (D LP) detects said change; characterized by a control unit operatively linked to said second detector (D HP) to evaluate a concentration measurement signal from this; wherein said control unit being arranged to de-activate said second detector (D HP) when said concentration measurement signal represents a concentration of said at least one specific gas which lies below a pre-specified value.