mhurhangee/ep-ind-claims huggingface dataset:
A method of selecting a beam-forming weighting vector said method comprising: receiving from user equipment a radio frequency fingerprint comprising indications of characteristics of radio signals received from a network node and at least one neighbouring network node within a wireless communication network; accessing a data base associating a plurality of radio frequency fingerprints comprising said indications of characteristics of radio signals from said network node and from neighbouring network nodes with a plurality of beam-forming weighting vectors; and comparing said received radio frequency fingerprint with said radio frequency fingerprints within said data base and selecting one of said beam-forming weighting vectors in dependence upon said comparison. receiving from user equipment a radio frequency fingerprint comprising indications of characteristics of radio signals received from a network node and at least one neighbouring network node within a wireless communication network; accessing a data base associating a plurality of radio frequency fingerprints comprising said indications of characteristics of radio signals from said network node and from neighbouring network nodes with a plurality of beam-forming weighting vectors; and comparing said received radio frequency fingerprint with said radio frequency fingerprints within said data base and selecting one of said beam-forming weighting vectors in dependence upon said comparison.
A process for preparing an extruded plant-based food product, the process comprising the steps of: a) feeding an extruder barrel with a composition comprising 40-70wt% water and 15-35wt% plant protein; b) extruding the composition from step a) above the texturization temperature of the plant protein; c) cooling the composition from step b) through a cooling die; d) marinating the obtained extruded composition of step c) with a marinade or injecting an aqueous solution into the extruded composition from step c) with a needle injector or coating the obtained extruded composition of step c) with a crumb coating, a flour coating, a tempura coating, a cornflakes coating or a combination thereof; wherein the cooling die has a changed cross-sectional dimension and wherein the changed cross-sectional dimension increases a cross-sectional area D change compared to a cross-sectional area before the changed cross-sectional dimension D before between 30 to 150% and wherein a cross-sectional area after the changed cross-sectional dimension D after is decreased again. a) feeding an extruder barrel with a composition comprising 40-70wt% water and 15-35wt% plant protein; b) extruding the composition from step a) above the texturization temperature of the plant protein; c) cooling the composition from step b) through a cooling die; d) marinating the obtained extruded composition of step c) with a marinade or injecting an aqueous solution into the extruded composition from step c) with a needle injector or coating the obtained extruded composition of step c) with a crumb coating, a flour coating, a tempura coating, a cornflakes coating or a combination thereof;
A semiconductor photodetector, comprising: a semiconductor substrate, one face of which is an incident surface of light to be detected; a plurality of pn junction-type photodiodes formed on a side of a detecting surface that is opposite to said incident surface of said semiconductor substrate; and a carrier capturing portion formed between adjacent photodiodes from among said plurality of photodiodes, on said detecting surface side of said semiconductor substrate, wherein said carrier capturing portion has a plurality of carrier capturing regions, respectively including pn-junctions, arranged at intervals, and said carrier capturing portion is formed such that at least one photodiode among said plurality of photodiodes is surrounded by two or more carrier capturing regions, formed along a periphery of the photodiode and arranged at intervals, among said plurality of carrier capturing regions, as seen from said detecting surface side, wherein at least one interval between the carrier capturing regions is provided between the at least one photodiode and a photodiode adjacent to the at least one photodiode. a semiconductor substrate, one face of which is an incident surface of light to be detected; a plurality of pn junction-type photodiodes formed on a side of a detecting surface that is opposite to said incident surface of said semiconductor substrate; and a carrier capturing portion formed between adjacent photodiodes from among said plurality of photodiodes, on said detecting surface side of said semiconductor substrate, wherein said carrier capturing portion has a plurality of carrier capturing regions, respectively including pn-junctions, arranged at intervals, and said carrier capturing portion is formed such that at least one photodiode among said plurality of photodiodes is surrounded by two or more carrier capturing regions, formed along a periphery of the photodiode and arranged at intervals, among said plurality of carrier capturing regions, as seen from said detecting surface side, wherein at least one interval between the carrier capturing regions is provided between the at least one photodiode and a photodiode adjacent to the at least one photodiode.
A method of measuring a thickness of a graphene layer directly grown on a silicon substrate, by using an X-ray photoelectron spectroscopy instrument, the method comprising: obtaining signal intensities from the graphene layer directly grown on the silicon substrate in response to emitting X-ray radiation toward the graphene layer directly grown on the silicon substrate using the XPS instrument; and calculating the thickness t G of the graphene layer according to an equation below, t G = λ EAL cos α ln R exp R 0 + 1 wherein R 0 = I co I sio, R exp = I c I si, λ EAL is an effective attenuation length, α is a detection angle for the XPS instrument, I co is a signal intensity of a photoelectron beam emitted from bulk-type graphene, I sio is a signal intensity of a photoelectron beam emitted from bulk-type silicon, I c is a signal intensity of a photoelectron beam emitted from the graphene layer and detected by a sensor on the XPS instrument in response to the graphene layer receiving X-ray radiation by the XPS instrument, and I si is a signal intensity of a photoelectron beam emitted from the silicon substrate and detected by the sensor on the XPS instrument in response to the silicon substrate receiving X-ray radiation by the XPS instrument, wherein the XPS instrument obtains R 0 by a linear relationship between the signal intensity I si of the photoelectron beam emitted from the silicon substrate and the signal intensity I c of the photoelectron beam emitted from the graphene layer. obtaining signal intensities from the graphene layer directly grown on the silicon substrate in response to emitting X-ray radiation toward the graphene layer directly grown on the silicon substrate using the XPS instrument; and calculating the thickness t G of the graphene layer according to an equation below, t G = λ EAL cos α ln R exp R 0 + 1 wherein R 0 = I co I sio, R exp = I c I si, λ EAL is an effective attenuation length, α is a detection angle for the XPS instrument, I co is a signal intensity of a photoelectron beam emitted from bulk-type graphene, I sio is a signal intensity of a photoelectron beam emitted from bulk-type silicon, I c is a signal intensity of a photoelectron beam emitted from the graphene layer and detected by a sensor on the XPS instrument in response to the graphene layer receiving X-ray radiation by the XPS instrument, and I si is a signal intensity of a photoelectron beam emitted from the silicon substrate and detected by the sensor on the XPS instrument in response to the silicon substrate receiving X-ray radiation by the XPS instrument, wherein the XPS instrument obtains R 0 by a linear relationship between the signal intensity I si of the photoelectron beam emitted from the silicon substrate and the signal intensity I c of the photoelectron beam emitted from the graphene layer.
A welding wire container having a base element, a plurality of walls which extend upwardly from the base element and circumscribe a space in which a coil of welding wire can be placed, with a reinforcement post being arranged in each of the corners of the space, a spacing rod being provided between adjacent reinforcement posts, characterized in that each of the spacing rods is arranged at a small distance from the upper ends of the reinforcement posts, the distance being in the order of 2,54 to 25,4 cm (1 to 10 inches), wherein each spacing rod is releasably connected with two of the reinforcement posts, wherein the spacing rod has a latch element at its ends and wherein the reinforcement posts are provided with a complementary latch element.
A method performed by a user equipment, UE, for sidelink failure management, the method comprising: receiving (712, 812), from a source cell, a first message including a sidelink Radio Resource Control, RRC, configuration associated with a target cell; determining (714, 814) that a sidelink failure event associated with an associated sidelink destination UE occurs; and transmitting (718, 818) a sidelink failure report indicating the sidelink failure event to the target cell after performing a handover procedure to switch from the source cell to the target cell, wherein: a type of the sidelink failure event comprises a sidelink RRC reconfiguration failure event for a PC5-RRC connection between the UE and the associated sidelink destination UE or a sidelink radio link failure event for the PC5-RRC connection between the UE and the associated sidelink destination UE. receiving (712, 812), from a source cell, a first message including a sidelink Radio Resource Control, RRC, configuration associated with a target cell; determining (714, 814) that a sidelink failure event associated with an associated sidelink destination UE occurs; and transmitting (718, 818) a sidelink failure report indicating the sidelink failure event to the target cell after performing a handover procedure to switch from the source cell to the target cell, wherein: a type of the sidelink failure event comprises a sidelink RRC reconfiguration failure event for a PC5-RRC connection between the UE and the associated sidelink destination UE or a sidelink radio link failure event for the PC5-RRC connection between the UE and the associated sidelink destination UE.
Semiconductor device (30, 40, 50, 60, 70) having a combination of a trench junction barrier Schottky diode and an integrated PN diode, wherein the breakdown voltage (BV_pn) of the PN diode is embodied in such a way that it is lower than the breakdown voltage (BV_schottky) of the Schottky diode, as a result of which a clamping function is given by means of the PN diode, characterized in that the semiconductor device comprises an n+-type substrate, in that an n-type layer is arranged on the n+-type substrate, in that at least two trenches are arranged in the n-type layer, in that the trenches are at most partly filled with a p-doped substance in such a way that p-doped regions of thickness (Dp) are arranged in the trenches, said p-doped regions together with the n-type layer forming the PN diodes, and in that the n+-type substrate and the n-type layer bear contact layers (4, 5), which consist of metal, wherein the contact layer fully covers the front side of the semiconductor device and fully fills the trenches, and also forms a Schottky barrier at the side walls of the upper region of the trenches that is not filled with p-doped Si or poly-Si.
A process for the preparation of particles of highly porous surface coating comprising the following steps in the given order: i) providing a nanoparticulate or microparticulate material carrying functional groups or providing and coating of the surface(s) of a nanoparticulate or microparticulate material with compounds carrying functional groups, ii) inserting a spacer group by reaction with the functional group of step i), iii) if necessary, activation of the surface(s) with functional groups, which coordinate to a metal ion by electron donor function or which can form a dative bond, provided that the spacer group in step ii) does not already contain such a group, iv) contacting the particles with a solution of a metal cation, v) washing step for removing unbound metal ions, vi) contacting the particles with a solution of an organic ligand molecule with electron donor function, vii) washing step for removing unbound ligand molecules, viii) repeating the steps iv) - vii) until a coating of the desired thickness on the particle surface is achieved, the particles being freely suspended during the entire procedure. i) providing a nanoparticulate or microparticulate material carrying functional groups or providing and coating of the surface(s) of a nanoparticulate or microparticulate material with compounds carrying functional groups, ii) inserting a spacer group by reaction with the functional group of step i), iii) if necessary, activation of the surface(s) with functional groups, which coordinate to a metal ion by electron donor function or which can form a dative bond, provided that the spacer group in step ii) does not already contain such a group, iv) contacting the particles with a solution of a metal cation, v) washing step for removing unbound metal ions, vi) contacting the particles with a solution of an organic ligand molecule with electron donor function, vii) washing step for removing unbound ligand molecules, viii) repeating the steps iv) - vii) until a coating of the desired thickness on the particle surface is achieved, the particles being freely suspended during the entire procedure.
A method of using non-codebook based channel state information feedback comprising: sending, by a network element to a user equipment, for providing a channel state information feedback, precoded reference signals corresponding to a plurality of logical antenna ports with one precoding codeword for each of the plurality of logical antenna ports; receiving, by the network element from the user equipment, a non-codebook based report comprising information on selected one or more of the plurality of logical antenna ports, the information comprising one or more of indices of the selected one or more of the plurality of logical antenna ports and corresponding one or more channel quality indicators for the selected one or more of the plurality of logical antenna ports, wherein the non-codebook based report does not comprise any precoding codeword; and sending data, by the network element to the user equipment, using the selected one or more of the plurality of logical antenna ports and the corresponding one precoding codeword for each of the selected one or more of the plurality of logical antenna ports. sending, by a network element to a user equipment, for providing a channel state information feedback, precoded reference signals corresponding to a plurality of logical antenna ports with one precoding codeword for each of the plurality of logical antenna ports; receiving, by the network element from the user equipment, a non-codebook based report comprising information on selected one or more of the plurality of logical antenna ports, the information comprising one or more of indices of the selected one or more of the plurality of logical antenna ports and corresponding one or more channel quality indicators for the selected one or more of the plurality of logical antenna ports, wherein the non-codebook based report does not comprise any precoding codeword; and sending data, by the network element to the user equipment, using the selected one or more of the plurality of logical antenna ports and the corresponding one precoding codeword for each of the selected one or more of the plurality of logical antenna ports.
Block window, comprising - a blind frame with a sash stop, - a sash frame with a surface element, - a forechamber between the blind frame and the sash frame, wherein - the forechamber is formed in sections by the sash stop, wherein - the blind frame comprises a drainage channel for the forechamber, wherein - a sealing is arranged between the sash stop and the sash frame, wherein the sealing comprises at least one air inlet channel for the forechamber, wherein the sash frame comprises a glass holding bar connected to the sash frame, wherein the sash frame forms a receiving area for an edge region of the surface element which is at least partially formed by the glass holding bar, characterised in that the sash frame comprises a number of longitudinal profile arrangements, wherein the profile arrangement comprises a first profile, a second profile and an insulation profile or insulation profile arrangement arranged between the profiles, wherein the glass holding bar is connected to the first profile of the sash frame, and wherein the sealing with the at least one air inlet channel is arranged between the sash stop and the glass holding bar, wherein the air inlet channel extends between the surroundings and the forechamber. - a blind frame with a sash stop, - a sash frame with a surface element, - a forechamber between the blind frame and the sash frame, wherein - the forechamber is formed in sections by the sash stop, wherein - the blind frame comprises a drainage channel for the forechamber, - a sealing is arranged between the sash stop and the sash frame,
A brake device (12a, 12b) comprising: - a hard magnet; - a soft magnet configured to switch polarity between a first polarity and a second polarity when being subjected to a magnetic field and configured to maintain the polarity when the magnetic field is removed; - an electric coil located around the soft magnet; - an electric control system configured to apply a current pulse to the electric coil to generate the magnetic field for changing the polarization of the soft magnet; and - a brake element comprising a magnetic target section, the brake element being arranged to move to a released position when the soft magnet adopts the first polarity, and arranged to move to a braking position due to a magnetic field generated by the hard magnet and the soft magnet in combination and acting on the magnetic target section when the soft magnet adopts the second polarity. - a hard magnet; - a soft magnet configured to switch polarity between a first polarity and a second polarity when being subjected to a magnetic field and configured to maintain the polarity when the magnetic field is removed; - an electric coil located around the soft magnet; - an electric control system configured to apply a current pulse to the electric coil to generate the magnetic field for changing the polarization of the soft magnet; and - a brake element comprising a magnetic target section, the brake element being arranged to move to a released position when the soft magnet adopts the first polarity, and arranged to move to a braking position due to a magnetic field generated by the hard magnet and the soft magnet in combination and acting on the magnetic target section when the soft magnet adopts the second polarity.
A pharmaceutically acceptable phosphoric acid salt of -N1-(3-(dimethylamino)propyl)-N8-hydroxy-2-((naphthalen-1-yloxy)methyl)octenediamide of the formula: wherein R 1 is dimethylaminopropyl.
A high-strength seamless steel pipe having a chemical composition of, in mass %: 0.10 to 0.18 % C; 0.03 to 1.0 % Si; 0.5 to 2.0 % Mn; up to 0.020 % P; up to 0.0060 % S; 0.10 to 0.60 % Cr; 0.10 to 0.40 % Mo; 0.02 to 0.40 % V; 0.004 to 0.020 % Ti; 0.0005 to 0.005 % B; up to 0.10 % Al; up to 0.008 % N; 0.0004 to 0.0040 % Ca; 0.1 to 1.0 % Cu; 0.2 to 0.8 % Ni; 0 to 0.05 % Nb; and the balance being Fe and impurities, wherein the following formula, F, is satisfied: C + Si / 30 + Mn + Cu + Cr / 20 + Ni / 60 + Mo / 15 + V / 10 + 5 × B ≤ 0.28 wherein, for the element symbols in F, the contents of the corresponding elements in mass % are substituted, the pipe has a wall thickness of 30 mm or larger, the pipe has a yield strength of 555 MPa or higher and a tensile strength of 625 MPa or higher, and a hardness of surface layers is 250 Hv or lower as measured in accordance with JIS Z 2244 at a position 1 mm from the inner surface of the steel pipe and at a position 1mm from the outer surface of the steel pipe. 0.10 to 0.18 % C; 0.03 to 1.0 % Si; 0.5 to 2.0 % Mn; up to 0.020 % P; up to 0.0060 % S; 0.10 to 0.60 % Cr; 0.10 to 0.40 % Mo; 0.02 to 0.40 % V; 0.004 to 0.020 % Ti; 0.0005 to 0.005 % B; up to 0.10 % Al; up to 0.008 % N; 0.0004 to 0.0040 % Ca; 0.1 to 1.0 % Cu; 0.2 to 0.8 % Ni; 0 to 0.05 % Nb; and the balance being Fe and impurities, wherein the following formula, F, is satisfied: C + Si / 30 + Mn + Cu + Cr / 20 + Ni / 60 + Mo / 15 + V / 10 + 5 × B ≤ 0.28 wherein, for the element symbols in F, the contents of the corresponding elements in mass % are substituted, the pipe has a wall thickness of 30 mm or larger, the pipe has a yield strength of 555 MPa or higher and a tensile strength of 625 MPa or higher, and a hardness of surface layers is 250 Hv or lower as measured in accordance with JIS Z 2244 at a position 1 mm from the inner surface of the steel pipe and at a position 1mm from the outer surface of the steel pipe.
A method of wireless communication performed by a first wireless station, in the following also referred to as STA, comprising at least a first transceiver and a second transceiver, the method comprising: generating a first Media Access Control, in the following also referred to as MAC, address for said first transceiver and a second MAC address for said second transceiver; constructing an Additional Authentication Data, in the following also referred to as AAD, by using said first MAC address; encrypting a first frame using said AAD; said first transceiver and said second transceiver performing clear channel assessment, in the following also referred to as CCA, independently of each other; after said encrypting, obtaining a first transmission opportunity, in the following also referred to as TXOP, on said second channel; and in said first TXOP, said second transceiver transmitting said first frame on said second channel for receipt by a second wireless STA, wherein said transmitting is performed without re-encrypting said first frame subsequent to said obtaining. generating a first Media Access Control, in the following also referred to as MAC, address for said first transceiver and a second MAC address for said second transceiver; constructing an Additional Authentication Data, in the following also referred to as AAD, by using said first MAC address; encrypting a first frame using said AAD; said first transceiver and said second transceiver performing clear channel assessment, in the following also referred to as CCA, independently of each other; after said encrypting, obtaining a first transmission opportunity, in the following also referred to as TXOP, on said second channel; and in said first TXOP, said second transceiver transmitting said first frame on said second channel for receipt by a second wireless STA, wherein said transmitting is performed without re-encrypting said first frame subsequent to said obtaining.