A Vertical Cavity Surface Emitting Laser device, the Vertical Cavity Surface Emitting Laser device comprises a first electrical contact, a substrate, a second electrical contact and an optical resonator, the optical resonator is arranged on a first side of the substrate, the optical resonator comprises a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first reflecting structure and the second reflecting structure and a guiding structure, wherein the guiding structure is arranged within a layer stack of the first distributed Bragg reflector or the second distributed Bragg reflector, wherein the guiding structure is configured to provide a lateral variation of an effective optical length of the first reflecting structure or the second reflecting structure parallel to the active layer, wherein the guiding structure is configured to define - a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position of the optical resonator such that a first light emitting area is provided, and - at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position of the optical resonator such that second light emitting area is provided, wherein the guiding structure is further configured to reduce an intensity of the intensity distribution in between the at least two light-emitting areas during operation of the Vertical Cavity Surface Emitting Laser device, and characterized in that the guiding structure comprises oxidized regions of more than one layer of the first distributed Bragg reflector or the second distributed Bragg reflector, so that the guiding structure is arranged inside the layer stack of the first distributed Bragg reflector or the second distributed Bragg reflector in a vertical direction of the Vertical Cavity Surface Emitting Laser device, and wherein the oxidized region are arranged to reduce the intensity in between the light-emitting areas, wherein the reduced intensity between the light emitting areas is produced by providing a lateral variation of the resonance condition across the active active layer. the Vertical Cavity Surface Emitting Laser device comprises a first electrical contact, a substrate, a second electrical contact and an optical resonator, the optical resonator is arranged on a first side of the substrate, the optical resonator comprises a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first reflecting structure and the second reflecting structure and a guiding structure, wherein the guiding structure is arranged within a layer stack of the first distributed Bragg reflector or the second distributed Bragg reflector, wherein the guiding structure is configured to provide a lateral variation of an effective optical length of the first reflecting structure or the second reflecting structure parallel to the active layer, wherein the guiding structure is configured to define - a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position of the optical resonator such that a first light emitting area is provided, and - at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position of the optical resonator such that second light emitting area is provided, - a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position of the optical resonator such that a first light emitting area is provided, and - at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position of the optical resonator such that second light emitting area is provided, wherein the guiding structure is further configured to reduce an intensity of the intensity distribution in between the at least two light-emitting areas during operation of the Vertical Cavity Surface Emitting Laser device, and characterized in that the guiding structure comprises oxidized regions of more than one layer of the first distributed Bragg reflector or the second distributed Bragg reflector, so that the guiding structure is arranged inside the layer stack of the first distributed Bragg reflector or the second distributed Bragg reflector in a vertical direction of the Vertical Cavity Surface Emitting Laser device, and wherein the oxidized region are arranged to reduce the intensity in between the light-emitting areas, wherein the reduced intensity between the light emitting areas is produced by providing a lateral variation of the resonance condition across the active active layer.