A method of manufacturing a photovoltaic cell, the method comprising - providing (21, 22) a semiconductor body (14, 30) of a first conductivity type having a front surface and a back surface, with at least one hole (15, 32) through the semiconductor body (14, 30) from the front surface to the back surface, - creating a layer (40, 140) of a second conductivity type at least adjacent the back surface in or on the semiconductor body (14, 30) in the photovoltaic cell when manufacturing of the photovoltaic cell has been completed the layer (40, 140) of the second conductivity type extending over the whole back surface, or to a trench along a perimeter of the back surface to prevent conduction along the edges of the cell; - applying electrode material (144, 146) in mutually separate first and second areas (60, 62) on the back surface, the electrode material in the first area electrically being in contact with the layer of the second conductivity type outside the second area when manufacturing of the photovoltaic cell has been completed, the second area of electrode material covering the hole on the back surface, the electrode material in the second area being applied on the layer of the second conductivity type; - creating an at least partial interruption of the layer of the second conductivity type around the second area, so that the layer of the second conductivity type around the second area is at least partially interrupted in the photovoltaic cell when manufacturing of the photovoltaic cell has been completed; - applying electrode material in a further area on the front surface, the electrode material of the further area covering the hole (15, 32) on the front surface in electrical contact with the electrode material in the second area on the back surface. - providing (21, 22) a semiconductor body (14, 30) of a first conductivity type having a front surface and a back surface, with at least one hole (15, 32) through the semiconductor body (14, 30) from the front surface to the back surface, - creating a layer (40, 140) of a second conductivity type at least adjacent the back surface in or on the semiconductor body (14, 30) in the photovoltaic cell when manufacturing of the photovoltaic cell has been completed the layer (40, 140) of the second conductivity type extending over the whole back surface, or to a trench along a perimeter of the back surface to prevent conduction along the edges of the cell; - applying electrode material (144, 146) in mutually separate first and second areas (60, 62) on the back surface, the electrode material in the first area electrically being in contact with the layer of the second conductivity type outside the second area when manufacturing of the photovoltaic cell has been completed, the second area of electrode material covering the hole on the back surface, the electrode material in the second area being applied on the layer of the second conductivity type; - creating an at least partial interruption of the layer of the second conductivity type around the second area, so that the layer of the second conductivity type around the second area is at least partially interrupted in the photovoltaic cell when manufacturing of the photovoltaic cell has been completed; - applying electrode material in a further area on the front surface, the electrode material of the further area covering the hole (15, 32) on the front surface in electrical contact with the electrode material in the second area on the back surface.