A method of manufacturing an assembly, comprising the steps of: (a) forming a plurality of separate amounts of silver nanoparticle paste on a topside of a semiconductor wafer such that there is an amount of silver nanoparticle paste on each of a plurality of first aluminum pads on the topside of the semiconductor wafer and such that there is no silver nanoparticle paste on each of a plurality of second aluminum pads on the topside of the semiconductor wafer, wherein there is no non-aluminum metal layer disposed between the first aluminum pads and the amounts of silver nanoparticle paste during the forming of step (a), and wherein there is no non-aluminum metal layer disposed on the second aluminum pads during the forming of step (a), wherein the silver nanoparticle paste does not have flux particles, wherein step (a) includes, for each of the first aluminum pads, the steps of: directing a stream of abrasive particles at a given one of the first aluminum pads thereby removing a layer of native aluminum oxide from the given one of the first aluminum pads in an oxygen-free environment; and after the removal of the layer of native aluminum oxide of step from the given one of the first aluminum pads then microjetting one of the amounts of silver nanoparticle paste onto unoxidized aluminum of the given one of the first aluminum pads in the oxygen-free environment, wherein the assembly is not subjected to oxygen between the time of native oxide removal until after the time of deposition of the silver nanoparticle paste; (b) sintering the amounts of silver nanoparticle paste so that each of the amounts of silver nanoparticle paste becomes a sintered silver structure disposed on one of the plurality of the first aluminum pads and so that the second aluminum pads are not covered by any sintered silver structure; (c) dicing the semiconductor wafer into a plurality of semiconductor dice, wherein each of the semiconductor dice is a semiconductor die that includes one of the first aluminum pads that is covered with the sintered silver structure and one of the second aluminum pads that is not covered by any sintered silver structure; (d) attaching a high current clip (37, 45) to the sintered silver structure on the first aluminum pad of one of the semiconductor dice; and (e) attaching a bond wire to the second aluminum pad of said one of the semiconductor dice. (a) forming a plurality of separate amounts of silver nanoparticle paste on a topside of a semiconductor wafer such that there is an amount of silver nanoparticle paste on each of a plurality of first aluminum pads on the topside of the semiconductor wafer and such that there is no silver nanoparticle paste on each of a plurality of second aluminum pads on the topside of the semiconductor wafer, wherein there is no non-aluminum metal layer disposed between the first aluminum pads and the amounts of silver nanoparticle paste during the forming of step (a), and wherein there is no non-aluminum metal layer disposed on the second aluminum pads during the forming of step (a), wherein the silver nanoparticle paste does not have flux particles, wherein step (a) includes, for each of the first aluminum pads, the steps of: directing a stream of abrasive particles at a given one of the first aluminum pads thereby removing a layer of native aluminum oxide from the given one of the first aluminum pads in an oxygen-free environment; and after the removal of the layer of native aluminum oxide of step from the given one of the first aluminum pads then microjetting one of the amounts of silver nanoparticle paste onto unoxidized aluminum of the given one of the first aluminum pads in the oxygen-free environment, wherein the assembly is not subjected to oxygen between the time of native oxide removal until after the time of deposition of the silver nanoparticle paste; directing a stream of abrasive particles at a given one of the first aluminum pads thereby removing a layer of native aluminum oxide from the given one of the first aluminum pads in an oxygen-free environment; and after the removal of the layer of native aluminum oxide of step from the given one of the first aluminum pads then microjetting one of the amounts of silver nanoparticle paste onto unoxidized aluminum of the given one of the first aluminum pads in the oxygen-free environment, wherein the assembly is not subjected to oxygen between the time of native oxide removal until after the time of deposition of the silver nanoparticle paste; (b) sintering the amounts of silver nanoparticle paste so that each of the amounts of silver nanoparticle paste becomes a sintered silver structure disposed on one of the plurality of the first aluminum pads and so that the second aluminum pads are not covered by any sintered silver structure; (c) dicing the semiconductor wafer into a plurality of semiconductor dice, wherein each of the semiconductor dice is a semiconductor die that includes one of the first aluminum pads that is covered with the sintered silver structure and one of the second aluminum pads that is not covered by any sintered silver structure; (d) attaching a high current clip (37, 45) to the sintered silver structure on the first aluminum pad of one of the semiconductor dice; and (e) attaching a bond wire to the second aluminum pad of said one of the semiconductor dice.