A semiconductor light emitting element comprising: a lower surface side and an upper surface side, the upper surface side being a light emitting surface side; a first conductivity type semiconductor layer having one of n-type conductivity and p-type conductivity; a light emitting layer; a second conductivity type semiconductor layer having the other of n-type conductivity and p-type conductivity; the first conductivity type semiconductor layer, the light emitting layer and the second conductivity type semiconductor layer being disposed in this order from the lower surface side of the light emitting element toward the upper surface side thereof; a first electrode provided on the first conductivity type semiconductor layer, the first electrode including a first pad portion and a first extending portion extending from the first pad portion; a first insulating film covering the first extending portion; a translucent electrode connected to an upper surface of the second conductivity type semiconductor layer and extending over the first insulating film; and a second electrode connected to the translucent electrode at a position on the first insulating film, the second electrode including a second pad portion, and a second extending portion extending from the second pad portion along the first extending portion so as to be superimposed over the first extending portion; wherein a part of the first electrode is provided on exposed portions of the first conductivity type semiconductor layer, the first conductivity type semiconductor layer being not covered by the second conductivity type semiconductor layer and the light emitting layer within the exposed portions, wherein the first electrode extends from the exposed portions of the first conductivity type semiconductor layer to the upper surface of the second conductivity type semiconductor layer, wherein the semiconductor light emitting element further comprises a second insulating film disposed between the first electrode and the second conductivity type semiconductor layer so as to insulate therebetween, wherein the exposed portions of the first conductivity type semiconductor layer are displaced from the position of the first pad portion, and wherein the translucent electrode comprises a first transparent conductive layer made of conductive oxide and formed on the upper surface of the second conductivity type semiconductor layer and wherein the translucent electrode comprises a second transparent conductive layer made of conductive oxide and formed on the first insulating film so as to connect the first transparent conductive layer to the second electrode, the second transparent conductive layer being formed only above the first insulating film and the second insulating film. a lower surface side and an upper surface side, the upper surface side being a light emitting surface side; a first conductivity type semiconductor layer having one of n-type conductivity and p-type conductivity; a light emitting layer; a second conductivity type semiconductor layer having the other of n-type conductivity and p-type conductivity; the first conductivity type semiconductor layer, the light emitting layer and the second conductivity type semiconductor layer being disposed in this order from the lower surface side of the light emitting element toward the upper surface side thereof; a first electrode provided on the first conductivity type semiconductor layer, the first electrode including a first pad portion and a first extending portion extending from the first pad portion; a first insulating film covering the first extending portion; a translucent electrode connected to an upper surface of the second conductivity type semiconductor layer and extending over the first insulating film; and a second electrode connected to the translucent electrode at a position on the first insulating film, the second electrode including a second pad portion, and a second extending portion extending from the second pad portion along the first extending portion so as to be superimposed over the first extending portion; wherein a part of the first electrode is provided on exposed portions of the first conductivity type semiconductor layer, the first conductivity type semiconductor layer being not covered by the second conductivity type semiconductor layer and the light emitting layer within the exposed portions, wherein the first electrode extends from the exposed portions of the first conductivity type semiconductor layer to the upper surface of the second conductivity type semiconductor layer, wherein the semiconductor light emitting element further comprises a second insulating film disposed between the first electrode and the second conductivity type semiconductor layer so as to insulate therebetween, wherein the exposed portions of the first conductivity type semiconductor layer are displaced from the position of the first pad portion, and wherein the translucent electrode comprises a first transparent conductive layer made of conductive oxide and formed on the upper surface of the second conductivity type semiconductor layer and wherein the translucent electrode comprises a second transparent conductive layer made of conductive oxide and formed on the first insulating film so as to connect the first transparent conductive layer to the second electrode, the second transparent conductive layer being formed only above the first insulating film and the second insulating film.