A method of making a semiconductor device, comprising: providing a semiconductor die (10; 170); forming a transient voltage suppression, TVS, structure in the semiconductor die; forming a capacitor over the semiconductor die by forming a passivation layer over the semiconductor die forming a first conductive layer over the passivation layer including a first terminal of the capacitor, forming a dielectric layer directly on only a first portion of the first conductive layer, and forming a second conductive layer directly on the dielectric layer as a second terminal of the capacitor, wherein the second conductive layer is physically isolated from the first conductive layer by the dielectric layer, wherein a capacitance of the capacitor is larger than a junction capacitance of the TVS structure; forming an insulating layer over the capacitor in physical contact with the passivation layer, the first conductive layer, the dielectric layer, and the second conductive layer forming a first conductive contact through the insulating layer to a second portion of the first conductive layer electrically isolated from the first terminal of the capacitor; forming a second conductive contact through the insulating layer to the second conductive layer; forming a third conductive contact through the insulating layer to a third portion of the first conductive layer electrically connected to the first terminal of the capacitor; forming a third conductive layer over the insulating layer including a portion of the third conductive layer electrically coupling the first conductive contact to the second conductive contact; and forming a semiconductor package with the TVS structure and the capacitor coupled in parallel. providing a semiconductor die (10; 170); forming a transient voltage suppression, TVS, structure in the semiconductor die; forming a capacitor over the semiconductor die by forming a passivation layer over the semiconductor die forming a first conductive layer over the passivation layer including a first terminal of the capacitor, forming a dielectric layer directly on only a first portion of the first conductive layer, and forming a second conductive layer directly on the dielectric layer as a second terminal of the capacitor, wherein the second conductive layer is physically isolated from the first conductive layer by the dielectric layer, wherein a capacitance of the capacitor is larger than a junction capacitance of the TVS structure; forming an insulating layer over the capacitor in physical contact with the passivation layer, the first conductive layer, the dielectric layer, and the second conductive layer forming a first conductive contact through the insulating layer to a second portion of the first conductive layer electrically isolated from the first terminal of the capacitor; forming a second conductive contact through the insulating layer to the second conductive layer; forming a third conductive contact through the insulating layer to a third portion of the first conductive layer electrically connected to the first terminal of the capacitor; forming a third conductive layer over the insulating layer including a portion of the third conductive layer electrically coupling the first conductive contact to the second conductive contact; and forming a semiconductor package with the TVS structure and the capacitor coupled in parallel. forming a passivation layer over the semiconductor die forming a first conductive layer over the passivation layer including a first terminal of the capacitor, forming a dielectric layer directly on only a first portion of the first conductive layer, and forming a second conductive layer directly on the dielectric layer as a second terminal of the capacitor, wherein the second conductive layer is physically isolated from the first conductive layer by the dielectric layer, wherein a capacitance of the capacitor is larger than a junction capacitance of the TVS structure; forming an insulating layer over the capacitor in physical contact with the passivation layer, the first conductive layer, the dielectric layer, and the second conductive layer forming a first conductive contact through the insulating layer to a second portion of the first conductive layer electrically isolated from the first terminal of the capacitor; forming a second conductive contact through the insulating layer to the second conductive layer; forming a third conductive contact through the insulating layer to a third portion of the first conductive layer electrically connected to the first terminal of the capacitor; forming a third conductive layer over the insulating layer including a portion of the third conductive layer electrically coupling the first conductive contact to the second conductive contact; and forming a semiconductor package with the TVS structure and the capacitor coupled in parallel.