a Low Gain Avalanche Detector (LGAD), comprising a semiconductor structure comprising: an n-type (respectively p-type) region comprising a plurality of segments each comprising an implanted region having a higher dopant density than the n-type (respectively p-type) region; a p-type (respectively n-type) region; and a gain region between the n-type (respectively p-type) region and the p-type (respectively n-type) region, the gain region buried between the n-type (respectively p-type) region and the p-type (respectively n-type) region and the gain region comprising: an n + -type region having a higher n-type dopant density than the n-type region; a p + -type region having a higher p-type dopant density than the p-type region; and a p-n junction between the n + -type region and the p + -type region; a readout structure comprising: a plurality of first electrodes, wherein: each of the first electrodes is on a different one of the segments, the first electrodes are electrically isolated from one another; and each of the segments comprises a first ohmic contact between the implanted region and the one of the first electrodes on the implanted region; a second ohmic contact between the p-type (respectively n-type) region and a second electrode; and wherein the p-n junction experiences a reverse bias electric field when an appropriate polarity bias is applied between the first electrodes and the second electrode. a semiconductor structure comprising: an n-type (respectively p-type) region comprising a plurality of segments each comprising an implanted region having a higher dopant density than the n-type (respectively p-type) region; a p-type (respectively n-type) region; and a gain region between the n-type (respectively p-type) region and the p-type (respectively n-type) region, the gain region buried between the n-type (respectively p-type) region and the p-type (respectively n-type) region and the gain region comprising: an n + -type region having a higher n-type dopant density than the n-type region; a p + -type region having a higher p-type dopant density than the p-type region; and a p-n junction between the n + -type region and the p + -type region; an n-type (respectively p-type) region comprising a plurality of segments each comprising an implanted region having a higher dopant density than the n-type (respectively p-type) region; a p-type (respectively n-type) region; and a gain region between the n-type (respectively p-type) region and the p-type (respectively n-type) region, the gain region buried between the n-type (respectively p-type) region and the p-type (respectively n-type) region and the gain region comprising: an n + -type region having a higher n-type dopant density than the n-type region; a p + -type region having a higher p-type dopant density than the p-type region; and a p-n junction between the n + -type region and the p + -type region; an n + -type region having a higher n-type dopant density than the n-type region; a p + -type region having a higher p-type dopant density than the p-type region; and a p-n junction between the n + -type region and the p + -type region; a readout structure comprising: a plurality of first electrodes, wherein: each of the first electrodes is on a different one of the segments, the first electrodes are electrically isolated from one another; and each of the segments comprises a first ohmic contact between the implanted region and the one of the first electrodes on the implanted region; each of the first electrodes is on a different one of the segments, the first electrodes are electrically isolated from one another; and each of the segments comprises a first ohmic contact between the implanted region and the one of the first electrodes on the implanted region; a second ohmic contact between the p-type (respectively n-type) region and a second electrode; and wherein the p-n junction experiences a reverse bias electric field when an appropriate polarity bias is applied between the first electrodes and the second electrode.