A pixel matrix of N rows (L i) and M columns (C j) produced in a semiconductor substrate, the matrix comprising at least one sub-matrix of four adjacent pixels (Pxl ij, Pxl (i+1),j, Pxl i,(j+1), Pxl (i+1),(j+1)), each of the pixels of the sub-matrix comprising: - a set of a photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for generating electric charges in response to incident electromagnetic radiation and a memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) controlled by a first signal and connected to the output of the photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for storing the generated electric charges; a detection node (SN ij, SN i,j+1), - a transfer gate (T3, T5, T6, T4), connected between the output of the memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) and the detection node (SN ij, SN i,j+1), - a binning stage (SOM1, SOM2), the binning stage being a switch controlled by a second signal and linking said pixel (Pxl ij) to an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij); the binning stage being common with an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij), the memory points (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) of the pixels of the sub-matrix being different one from another; said pixel matrix being characterised in that it further comprises control means (CONT) configured to simultaneously apply a pulse on the first signal and on the second signal so as to transfer the charges generated by said adjacent pixel (Pxl i,j+1) from the memory point (POINT_MEM i,j+1) of the adjacent pixel or from the photoelectric-effect element (EPE i,j+1) of the adjacent pixel to the memory point (POINT_MEM i,j) of said pixel (Pxl i,j); at least one detection node (SN ij, SN i,j+1) per sub-matrix being common to two adjacent pixels (Pxl ij, Pxl (i+1),j) of the sub-matrix belonging to the same column (C j), the pixel matrix further comprising at least one readout stage (LECT ij, LECT i,j+1) per sub-matrix, connected to the common detection node (SN ij, SN i,j+1). each of the pixels of the sub-matrix comprising: - a set of a photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for generating electric charges in response to incident electromagnetic radiation and a memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) controlled by a first signal and connected to the output of the photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for storing the generated electric charges; a detection node (SN ij, SN i,j+1), - a transfer gate (T3, T5, T6, T4), connected between the output of the memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) and the detection node (SN ij, SN i,j+1), - a binning stage (SOM1, SOM2), the binning stage being a switch controlled by a second signal and linking said pixel (Pxl ij) to an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij); the binning stage being common with an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij), - a set of a photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for generating electric charges in response to incident electromagnetic radiation and a memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) controlled by a first signal and connected to the output of the photoelectric-effect element (EPE i,j, EPE i+1,j, EPE i,j+1, EPE i+1,j+1) for storing the generated electric charges; a detection node (SN ij, SN i,j+1), - a transfer gate (T3, T5, T6, T4), connected between the output of the memory point (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) and the detection node (SN ij, SN i,j+1), - a binning stage (SOM1, SOM2), the binning stage being a switch controlled by a second signal and linking said pixel (Pxl ij) to an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij); the binning stage being common with an adjacent pixel (Pxl i,j+1) of the sub-matrix belonging to the same row (L i) of said pixel (Pxl ij), the memory points (POINT_MEM i,j, POINT_MEM i,j+1, POINT_MEM i+1,j, POINT_MEM i+1,j+1) of the pixels of the sub-matrix being different one from another; said pixel matrix being characterised in that it further comprises control means (CONT) configured to simultaneously apply a pulse on the first signal and on the second signal so as to transfer the charges generated by said adjacent pixel (Pxl i,j+1) from the memory point (POINT_MEM i,j+1) of the adjacent pixel or from the photoelectric-effect element (EPE i,j+1) of the adjacent pixel to the memory point (POINT_MEM i,j) of said pixel (Pxl i,j); at least one detection node (SN ij, SN i,j+1) per sub-matrix being common to two adjacent pixels (Pxl ij, Pxl (i+1),j) of the sub-matrix belonging to the same column (C j), the pixel matrix further comprising at least one readout stage (LECT ij, LECT i,j+1) per sub-matrix, connected to the common detection node (SN ij, SN i,j+1).