A method of producing a heat discharge structure (1,10) for a light source device emitting a laser beam, said structure (1,10) being for fixing said light source device and discharging a heat, said structure comprising: a film of a nitride of a group 13 element, said film comprising a first main face, a second main face and an outer side end face; and a portion for containing said light source device, said portion comprising a through hole opening at said first main face and said second main face, wherein said through hole contains the light source device and has an inner wall face which is a fixing face for fixing said light source device, said fixing face facing said through hole and being for contacting said light source device, said method comprising: forming a seed crystal film on a film-forming face of a base body; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films, so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening; forming films of a nitride of a group 13 element on said seed crystal films, respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening; and removing said base body. a film of a nitride of a group 13 element, said film comprising a first main face, a second main face and an outer side end face; and a portion for containing said light source device, said portion comprising a through hole opening at said first main face and said second main face, wherein said through hole contains the light source device and has an inner wall face which is a fixing face for fixing said light source device, said fixing face facing said through hole and being for contacting said light source device, said method comprising: forming a seed crystal film on a film-forming face of a base body; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films, so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening; forming films of a nitride of a group 13 element on said seed crystal films, respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening; and removing said base body. forming a seed crystal film on a film-forming face of a base body; patterning said seed crystal film by photo lithography to obtain patterned seed crystal films, so that an opening is formed at a predetermined position in each of said seed crystal films and said film-forming face of said base body is exposed through said opening; forming films of a nitride of a group 13 element on said seed crystal films, respectively, so that a space is provided between the adjacent films of said nitride of the group 13 element, an opening is formed at a predetermined position in each of said films of said nitride of the group 13 element and said surface of said base body is exposed through said opening; and removing said base body.