A photodiode device, comprising: - a substrate of semiconductor material having a surface, - a doped region of a first type of electrical conductivity in the substrate, - a contact region of the first type of electrical conductivity having a higher doping concentration than the doped region, the contact region being arranged at the surface on top of the doped region, the contact region being contiguous with the doped region and provided with one of an anode or cathode connection (7, 11), - a further doped region, which is arranged in the substrate adjacent to the doped region and comprises an area of the surface, the further doped region being of the second type of electrical conductivity and forming a pn junction with the doped region, the doped region and the contact region surrounding the further doped region, and the contact region extending into the further doped region, - a further contact region of a second type of electrical conductivity that is opposite to the first type of electrical conductivity, the further contact region being arranged at the surface as a doped region within the further doped region and contiguous with the further doped region and provided with the other one of the anode or cathode connection (8, 12), - the contact region surrounding an area of the surface that is entirely formed by the semiconductor material of the substrate, this area covering the further contact region, - a lateral pn junction formed at the surface by a boundary between the contact region and the further doped region, - a field electrode covering the lateral pn junction and a portion of the surface between the contact region and the further contact region, and being separated from the surface by a dielectric material, and - the field electrode being provided with a further electrical connection (9, 13) separate from the anode and cathode connections (7, 8, 11, 12). - a substrate of semiconductor material having a surface, - a doped region of a first type of electrical conductivity in the substrate, - a contact region of the first type of electrical conductivity having a higher doping concentration than the doped region, the contact region being arranged at the surface on top of the doped region, the contact region being contiguous with the doped region and provided with one of an anode or cathode connection (7, 11), - a further doped region, which is arranged in the substrate adjacent to the doped region and comprises an area of the surface, the further doped region being of the second type of electrical conductivity and forming a pn junction with the doped region, the doped region and the contact region surrounding the further doped region, and the contact region extending into the further doped region, - a further contact region of a second type of electrical conductivity that is opposite to the first type of electrical conductivity, the further contact region being arranged at the surface as a doped region within the further doped region and contiguous with the further doped region and provided with the other one of the anode or cathode connection (8, 12), - the contact region surrounding an area of the surface that is entirely formed by the semiconductor material of the substrate, this area covering the further contact region, - a lateral pn junction formed at the surface by a boundary between the contact region and the further doped region, - a field electrode covering the lateral pn junction and a portion of the surface between the contact region and the further contact region, and being separated from the surface by a dielectric material, and - the field electrode being provided with a further electrical connection (9, 13) separate from the anode and cathode connections (7, 8, 11, 12).