A pixel arrangement configured to be included in a time-of-flight sensor, the pixel arrangement having a differential analog double correlated sampling (DADCS) architecture comprising: a differential pixel structure, each pixel comprising a polysilicon sensing element configured to establish charges related to incident light during a measurement phase; a charge storage element configured to accumulate integrated charges of the measurement phase transferred from the polysilicon sensing element; a diffusion node configured to establish a measurement voltage representative of ones of the integrated charges established during the measurement phase that are dumped from the charge storage element; and analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to the measurement phase; the analog domain output circuitry configured to subtract the reset voltage stored in the reset capacitance element from the measurement voltage stored in the measurement capacitance element to establish a compensated result that at least partially reduces readout voltage uncertainty of each pixel, and provide the compensated result for processing into a pixel output voltage differentially derived with at least a further compensated result associated with a further polysilicon sensing element of the differential pixel structure during an associated measurement phase a bias gate element that establishes a bias potential between the polysilicon sensing element and the charge storage element to provide a pathway for transfer of at least a portion of the charges established at the polysilicon sensing element to the charge storage element and reduce a quantity of the charges transferred to the charge storage element from returning to the polysilicon sensing element; and a transfer gate element, based on activation, establishes a transfer potential between at least the charge storage element and the diffusion node to dump the ones of the integrated charges stored at the charge storage element to the diffusion node. a differential pixel structure, each pixel comprising a polysilicon sensing element configured to establish charges related to incident light during a measurement phase; a charge storage element configured to accumulate integrated charges of the measurement phase transferred from the polysilicon sensing element; a diffusion node configured to establish a measurement voltage representative of ones of the integrated charges established during the measurement phase that are dumped from the charge storage element; and analog domain output circuitry comprising a measurement capacitance element that stores the measurement voltage, and a reset capacitance element that stores a reset voltage established at the diffusion node during a reset phase performed prior to the measurement phase; the analog domain output circuitry configured to subtract the reset voltage stored in the reset capacitance element from the measurement voltage stored in the measurement capacitance element to establish a compensated result that at least partially reduces readout voltage uncertainty of each pixel, and provide the compensated result for processing into a pixel output voltage differentially derived with at least a further compensated result associated with a further polysilicon sensing element of the differential pixel structure during an associated measurement phase a bias gate element that establishes a bias potential between the polysilicon sensing element and the charge storage element to provide a pathway for transfer of at least a portion of the charges established at the polysilicon sensing element to the charge storage element and reduce a quantity of the charges transferred to the charge storage element from returning to the polysilicon sensing element; and a transfer gate element, based on activation, establishes a transfer potential between at least the charge storage element and the diffusion node to dump the ones of the integrated charges stored at the charge storage element to the diffusion node.