A high electron mobility transistor "HEMT" semiconductor device comprising: a drift region formed laterally between a gate and a drain, wherein the drift region is configured to support an electric field; a plurality of field plates (131, 132, 133, 134) disposed above the drift region, the plurality of field plates comprising: a first field plate configured to support a first potential; and a second field plate configured to support a second potential; and a capacitance network electrically coupled to the plurality of field plates, wherein the capacitance network is configured to establish the first potential on the first field plate and the second potential on the second field plate so as to distribute the electric field supported by the drift region, wherein the capacitance network comprises a first capacitor electrically coupled to the first field plate and between the first field plate and a DC potential, a second capacitor electrically coupled to the second field plate and between the second field plate and the DC potential, characterized in that the capacitance network of the HEMT semiconductor device further comprises a first impedance electrically coupled between the DC potential and the first field plate, a second impedance electrically coupled between the drain and the second field plate, and one or more additional impedances (R2, R3, R4, R5) electrically coupled between the first field plate and the second field plate. a drift region formed laterally between a gate and a drain, wherein the drift region is configured to support an electric field; a plurality of field plates (131, 132, 133, 134) disposed above the drift region, the plurality of field plates comprising: a first field plate configured to support a first potential; and a second field plate configured to support a second potential; and a capacitance network electrically coupled to the plurality of field plates, wherein the capacitance network is configured to establish the first potential on the first field plate and the second potential on the second field plate so as to distribute the electric field supported by the drift region, wherein the capacitance network comprises a first capacitor electrically coupled to the first field plate and between the first field plate and a DC potential, a second capacitor electrically coupled to the second field plate and between the second field plate and the DC potential, characterized in that the capacitance network of the HEMT semiconductor device further comprises a first impedance electrically coupled between the DC potential and the first field plate, a second impedance electrically coupled between the drain and the second field plate, and one or more additional impedances (R2, R3, R4, R5) electrically coupled between the first field plate and the second field plate. a first field plate configured to support a first potential; and a second field plate configured to support a second potential; and a capacitance network electrically coupled to the plurality of field plates, wherein the capacitance network is configured to establish the first potential on the first field plate and the second potential on the second field plate so as to distribute the electric field supported by the drift region, wherein the capacitance network comprises a first capacitor electrically coupled to the first field plate and between the first field plate and a DC potential, a second capacitor electrically coupled to the second field plate and between the second field plate and the DC potential, characterized in that the capacitance network of the HEMT semiconductor device further comprises a first impedance electrically coupled between the DC potential and the first field plate, a second impedance electrically coupled between the drain and the second field plate, and one or more additional impedances (R2, R3, R4, R5) electrically coupled between the first field plate and the second field plate. a first capacitor electrically coupled to the first field plate and between the first field plate and a DC potential, a second capacitor electrically coupled to the second field plate and between the second field plate and the DC potential, characterized in that the capacitance network of the HEMT semiconductor device further comprises a first impedance electrically coupled between the DC potential and the first field plate, a second impedance electrically coupled between the drain and the second field plate, and one or more additional impedances (R2, R3, R4, R5) electrically coupled between the first field plate and the second field plate.