mhurhangee/ep-ind-claims huggingface dataset:
A process for manufacturing SiC, wherein the emissions of polluting gases are minimized, comprising the reduction of silicon oxide by carbon, by electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source selected from cokes, especially petroleum coke, and a source of silicon, especially a silica having a purity of greater than 95% of SiO 2, in order to give rise, at a temperature above 1500°C, to the simplified reaction: SiO 2 + 3C = SiC + 2CO, said process being characterized in that said carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.
Locking unit having: - a hydraulically activatable piston; - a solenoid having a coil and an armature; and - at least one latching element; - wherein the at least one latching element interacts with the armature or an armature rod attached thereto, and the piston or a sleeve connected to the piston has at least one latching receptacle (41, 42), so that the piston as a result of the retaining interaction between the at least one latching element and the at least one latching receptacle (41, 42) is able to be fixedly established; wherein - the locking unit has a coupling rod which at one of its ends is fastened to the armature or to the armature rod; - a magnetic element is attached to the other end of the coupling rod opposite the armature or the armature rod; and - the locking unit has a guide tube in which the magnetic element is guided, characterized in that - provided is at least one pre-loading element which is designed in such a way that it acts on the coupling rod and keeps the magnetic element without radial play in the guide tube. - a hydraulically activatable piston; - a solenoid having a coil and an armature; and - at least one latching element; - wherein the at least one latching element interacts with the armature or an armature rod attached thereto, and the piston or a sleeve connected to the piston has at least one latching receptacle (41, 42), so that the piston as a result of the retaining interaction between the at least one latching element and the at least one latching receptacle (41, 42) is able to be fixedly established; wherein - the locking unit has a coupling rod which at one of its ends is fastened to the armature or to the armature rod; - a magnetic element is attached to the other end of the coupling rod opposite the armature or the armature rod; and - the locking unit has a guide tube in which the magnetic element is guided, characterized in that - provided is at least one pre-loading element which is designed in such a way that it acts on the coupling rod and keeps the magnetic element without radial play in the guide tube.
An isolator comprising: a chamber to be decontaminated including an inlet provided with an intake filter and an outlet provided with a discharge filter; a first flow path through which outside air is taken into the chamber to be decontaminated via the intake filter; a second flow path through which gas in the chamber to be decontaminated is discharged via the discharge filter; a first blower configured to take in the outside air to the chamber to be decontaminated through the first flow path, as well as produce an air current to discharge the gas in the chamber to be decontaminated through the second flow path; a decontaminating gas supply unit configured to supply decontaminating gas into the chamber to be decontaminated without flowing through the intake filter and the discharge filter; a third flow path configured to connect the intake filter and the discharge filter at an exterior of the chamber to be decontaminated; and a second blower configured to produce an air current to circulate the gas in the chamber to be decontaminated through the intake filter, the discharge filter, and the third flow path, in a direction from the intake filter to the discharge filter, when the decontaminating gas is supplied to the chamber to be decontaminated. a chamber to be decontaminated including an inlet provided with an intake filter and an outlet provided with a discharge filter; a first flow path through which outside air is taken into the chamber to be decontaminated via the intake filter; a second flow path through which gas in the chamber to be decontaminated is discharged via the discharge filter; a first blower configured to take in the outside air to the chamber to be decontaminated through the first flow path, as well as produce an air current to discharge the gas in the chamber to be decontaminated through the second flow path; a decontaminating gas supply unit configured to supply decontaminating gas into the chamber to be decontaminated without flowing through the intake filter and the discharge filter; a third flow path configured to connect the intake filter and the discharge filter at an exterior of the chamber to be decontaminated; and a second blower configured to produce an air current to circulate the gas in the chamber to be decontaminated through the intake filter, the discharge filter, and the third flow path, in a direction from the intake filter to the discharge filter, when the decontaminating gas is supplied to the chamber to be decontaminated.
A molding system configured to sequentially form features of a structure, the molding system comprising: a first tool comprising a number of features configured to completely form a first set of radii of a structure and a number of partial forming features configured to partially form a second set of radii of the structure; a second tool comprising a number of completion features configured to complete shaping of the second set of radii; and a first bagging layer and a second bagging layer positioned between the first tool and the second tool. a first tool comprising a number of features configured to completely form a first set of radii of a structure and a number of partial forming features configured to partially form a second set of radii of the structure; a second tool comprising a number of completion features configured to complete shaping of the second set of radii; and a first bagging layer and a second bagging layer positioned between the first tool and the second tool.
A protection method for a semiconductor wafer in a step of thinning the semiconductor wafer, comprising a first step of adhering a surface protecting adhesive film to a surface of the semiconductor wafer having circuits formed thereon, a second step of processing the back surface of the semiconductor wafer having no circuits formed thereon to reduce the thickness of the semiconductor wafer and a third step of adhering a bonding film for die bonding to the back surface of the semiconductor wafer, and further successively a step of peeling the surface protecting adhesive film and a dicing step of dividing and cutting the semiconductor wafer are performed, wherein the third step is performed without peeling the surface protecting adhesive film for the semiconductor wafer, and the surface protecting adhesive film comprises an adhesive layer having a storage elastic modulus at 150°C of at least 1 x 10 5 Pa and a thickness of 3 to 100 μm which is formed on one surface of a substrate film having at least a heat-resistant film layer and a low elastic-modulus film layer, the heat-resistant film layer being made of a resin having a melting point of 200°C or more and having a thickness D of 10 to 300 μm, and the ratio of the storage elastic modulus G in MPa and the thickness D in μm meet the relations represented by the following equation at 0 to 100°C and the following equation at 100 to 300°C: 3 ≤ G / D ≤ 10, 000 0.03 ≤ G / D ≤ 1, 000 wherein the low elastic-modulus film layer comprises at least one resin selected from the group consisting of an ethylene-vinyl acetate copolymer, an ethylene-alkyl acrylate copolymer, the alkyl group having 1 to 4 carbon atoms, a low-density polyethylene and an ethylene-α-olefin copolymer, the α-olefin having 3 to 8 carbon atoms.
A material comprising a transparent substrate coated with a stack of thin layers comprising at least one functional coating comprising: - at least one silver-based metal functional layer exhibiting a thickness of between 2 and 15 nm, - optionally at least one blocking layer chosen from metal layers, metal nitride layers, metal oxide layers and metal oxynitride layers of one or more elements chosen from titanium, nickel, chromium and tantalum, such as Ti, TiN, TiO x, Ta, TaN, Ni, NiN, Cr, CrN, NiCr or NiCrN, - at least one niobium-based metal or nitride functional layer located: - in contact with at least a portion of the silver-based functional layer or - separated from at least a portion of the silver-based functional layer by one or more layers chosen from blocking layers, the sum of the thicknesses of which is less than 5 nm, - preferably, each silver-based metal layer is positioned in contact and between one or more niobium-based metal or nitride functional layers and/or one or more blocking layers, - the sum of the thicknesses of the niobium-based functional layer or layers, located directly in contact with or separated by a thickness of less than 5 nm from at least a portion of the silver-based functional layer, is between 4 and 20 nm. - at least one silver-based metal functional layer exhibiting a thickness of between 2 and 15 nm, - optionally at least one blocking layer chosen from metal layers, metal nitride layers, metal oxide layers and metal oxynitride layers of one or more elements chosen from titanium, nickel, chromium and tantalum, such as Ti, TiN, TiO x, Ta, TaN, Ni, NiN, Cr, CrN, NiCr or NiCrN, - at least one niobium-based metal or nitride functional layer located: - in contact with at least a portion of the silver-based functional layer or - separated from at least a portion of the silver-based functional layer by one or more layers chosen from blocking layers, the sum of the thicknesses of which is less than 5 nm, - in contact with at least a portion of the silver-based functional layer or - separated from at least a portion of the silver-based functional layer by one or more layers chosen from blocking layers, the sum of the thicknesses of which is less than 5 nm, - preferably, each silver-based metal layer is positioned in contact and between one or more niobium-based metal or nitride functional layers and/or one or more blocking layers, - the sum of the thicknesses of the niobium-based functional layer or layers, located directly in contact with or separated by a thickness of less than 5 nm from at least a portion of the silver-based functional layer, is between 4 and 20 nm.
A method for switching off power semiconductor switches in a bridge circuit, in which a first DC voltage connection of the bridge circuit is connected to a first intermediate point via a first power semiconductor switch, the first intermediate point is connected to an AC connection of the bridge circuit via a second power semiconductor switch, the AC connection is connected to a second intermediate point via a third power semiconductor switch and the second intermediate point is connected to a second DC voltage connection of the bridge circuit via a fourth power semiconductor switch, and in which a neutral connection of the bridge circuit is connected to the first intermediate point via a fifth power semiconductor switch and is connected to the second intermediate point via a sixth power semiconductor switch, wherein the method comprises a switch-off process in which a configuration (K-O) is established in which all power semiconductor switches (T1-T6) in the bridge circuit are in a switched-off state, characterized in that, over the course of the switch-off process, a configuration (K-3, K-5, K-9) is deliberately established in which the fifth power semiconductor switch and the sixth power semiconductor switch are simultaneously in a switched-on state, while the first power semiconductor switch and the fourth power semiconductor switch are in a switched-off state, wherein, starting from a configuration (K-A, K-B) that is present at the start of the switch-off process and in which the first power semiconductor switch, the sixth power semiconductor switch and either the second power semiconductor switch or the third power semiconductor switch are in a switched-on state and all other power semiconductor switches (T2, T3, T4, T5) are in a switched-off state, the fifth power semiconductor switch is transferred to a switched-on state over the course of the switch-off process after the first power semiconductor switch has been transferred to a switched-off state over the course of the switch-off process.
A method performed by a remote unit, the method comprising: transmitting a first message to a first network unit of a first network, the first message comprising a first internet-of-things registration request for restricted access for PLMN discovery; receiving a second message from the first network unit, the second message comprising a first indication of at least one network to which the remote unit belongs, wherein the second message is received in response to transmitting the first message; and transmitting a third message to a second network unit, the third message comprising a second internet-of-things registration request, wherein the second internet-of-things registration request comprises a second indication of a network to which the remote unit belongs, and the second indication is selected from the first indication. transmitting a first message to a first network unit of a first network, the first message comprising a first internet-of-things registration request for restricted access for PLMN discovery; receiving a second message from the first network unit, the second message comprising a first indication of at least one network to which the remote unit belongs, wherein the second message is received in response to transmitting the first message; and transmitting a third message to a second network unit, the third message comprising a second internet-of-things registration request, wherein the second internet-of-things registration request comprises a second indication of a network to which the remote unit belongs, and the second indication is selected from the first indication.
A salt represented by the following Formula wherein K represents a quaternary ammonium cation of the formula selected from the group consisting of Formula, Formula, Formula, and Formula, wherein R represents an alkyl selected from the group consisting of tallow, soya and oleyl alkyl, and x and y in Formula are integers from the range 1 to 15, inclusive; and wherein tallow alkyl relates to a mixture of saturated and unsaturated alkyl groups composed of alkyl groups with 12 carbon atoms, 14 carbon atoms, 16 carbon atoms, and 18 carbon atoms, wherein the percentage of groups with double bonds is 40 to 55%, the percentage of alkyl groups with 16 carbon atoms is 25 to 35%, and the percentage of alkyl groups with 18 carbon atoms is 60 to 70%; soya alkyl relates to a mixture of saturated and unsaturated alkyl groups composed of alkyl groups with 14 carbon atoms, 16 carbon atoms, and 18 carbon atoms, wherein the percentage of groups with double bonds is 55 to 70%; and oleyl alkyl relates to a mixture of saturated and unsaturated alkyl groups composed of alkyl groups having 12 carbon atoms, 14 carbon atoms, 16 carbon atoms, and 18 carbon atoms, wherein the percentage of groups with double bonds is 75 to 82%, and the percentage of alkyl groups with 18 carbon atoms is 75 to 85%.
A battery module comprising: a cell stack including a plurality of battery cells; and a module frame accommodating the cell stack, wherein a bottom part of the module frame comprises a first area, a second area, and a third area, in which a thermally conductive resin layer is formed, and wherein the thermally conductive resin layers (410a, 420a) of the first area and the second area are thicker than the thermally conductive resin layer of the third area, wherein the first area and the second area are located at opposite ends spaced apart from each other in the bottom part of the module frame, and wherein the third area is located between the first area and the second area that are spaced apart from each other. a cell stack including a plurality of battery cells; and a module frame accommodating the cell stack, wherein a bottom part of the module frame comprises a first area, a second area, and a third area, in which a thermally conductive resin layer is formed, and wherein the thermally conductive resin layers (410a, 420a) of the first area and the second area are thicker than the thermally conductive resin layer of the third area, wherein the first area and the second area are located at opposite ends spaced apart from each other in the bottom part of the module frame, and wherein the third area is located between the first area and the second area that are spaced apart from each other.
A computer-implemented medical method of irradiation treatment planning, the method comprising the following steps: - providing an initial coverage volume for a planning target volume to be irradiated in an irradiation treatment with a prescribed dose (105, S1) - providing at least one constraint (106, 110) for an organ at risk, the at least one constraint (106, 110) being indicative of an allowed dose (107, 111) deposited in at least a part of the organ at risk; - calculating an organ dose deposited in said at least part of the organ at risk when applying an initial irradiation treatment plan; characterised by the following steps: - determining an amount of violation of the at least one constraint (106, 110) based on comparing the at least one constraint and the calculated organ dose; - calculating a reduction coverage volume for the planning target volume based on the determined amount of violation; - generating a virtual planning object by changing a volume of the organ at risk, such that an overlap region of the virtual planning object with the planning target volume corresponds to the reduction coverage volume; and - reducing the initial coverage volume of the planning target volume based on removing at least a part of said overlap region from the planning target volume, thereby generating an optimized planning target volume to be irradiated during the irradiation treatment. - providing an initial coverage volume for a planning target volume to be irradiated in an irradiation treatment with a prescribed dose (105, S1) - providing at least one constraint (106, 110) for an organ at risk, the at least one constraint (106, 110) being indicative of an allowed dose (107, 111) deposited in at least a part of the organ at risk; - calculating an organ dose deposited in said at least part of the organ at risk when applying an initial irradiation treatment plan; - determining an amount of violation of the at least one constraint (106, 110) based on comparing the at least one constraint and the calculated organ dose; - calculating a reduction coverage volume for the planning target volume based on the determined amount of violation; - generating a virtual planning object by changing a volume of the organ at risk, such that an overlap region of the virtual planning object with the planning target volume corresponds to the reduction coverage volume; and - reducing the initial coverage volume of the planning target volume based on removing at least a part of said overlap region from the planning target volume, thereby generating an optimized planning target volume to be irradiated during the irradiation treatment.
A system for feeding preforms to a container blow-molding machine, which comprises, in sequence along a longitudinal advancement direction of the preforms, at least one sorting and alignment device which is fed with randomly arranged preforms and comprises at least two alignment rollers (3a, 3b) which are substantially parallel, can rotate about the respective axes (101, 102) and are intended to arrange the preforms in conveyance tracks (4a, 4b) which are inclined with respect to the horizontal, in order to feed them to the blow-molding machine, said system comprising means for removing the incorrectly positioned preforms, which are individually laid flat and arrive from the alignment rollers (3a, 3b) on the conveyance tracks (4a, 4b) and are oriented parallel to said longitudinal advancement direction, characterized in that said removal means comprise an upper guide which has at least one flow control portion which is arranged, at least in one active blocking position thereof, above the end of said alignment rollers (3a, 3b) which is proximate to said conveyance tracks (4a, 4b) at a distance from said alignment rollers (3a, 3b) which is such as to allow the passage below said flow control portion of the correctly oriented preforms and block the longitudinal end, which is arranged upstream with respect to the longitudinal advancement direction, of said incorrectly oriented preforms when said incorrectly oriented preforms straddle said alignment rollers (3a, 3b) and said conveyance tracks (4a, 4b), said removal means comprising means for unloading said incorrectly oriented preforms which are blocked by said flow control portion.
Apparatus (10, 10A, 30, 50) for measuring electrical potentials in a frequency band of interest, the apparatus (10, 10A, 30, 50) comprising: an amplifier having a first gain, an input and an output; a filter having a second gain that is the inverse of the first gain, an input connected to receive a signal from the amplifier output and an output; and an impedance having a resistive component coupled between the filter output and the amplifier input; wherein the filter has a passband that includes the frequency band of interest and excludes direct current signals; characterized in that the amplifier and filter combined have unity gain for signals in the frequency band of interest; and in that the frequency band of interest comprises the frequencies in the range of 1 Hz to 100 Hz or 100 mHz to 300 Hz. an amplifier having a first gain, an input and an output; a filter having a second gain that is the inverse of the first gain, an input connected to receive a signal from the amplifier output and an output; and an impedance having a resistive component coupled between the filter output and the amplifier input; wherein the filter has a passband that includes the frequency band of interest and excludes direct current signals; characterized in that the amplifier and filter combined have unity gain for signals in the frequency band of interest; and in that the frequency band of interest comprises the frequencies in the range of 1 Hz to 100 Hz or 100 mHz to 300 Hz.
A method performed by a first terminal in a wireless communication system, the method comprising: establishing a unicast link with a second terminal, wherein the unicast link supports one or more service types associated with a first pair of application layer identifiers, IDs, of the first terminal and the second terminal; in case that a data transfer for a service is initiated, determining whether to reuse the established unicast link based on a second pair of application layer IDs associated with the service; and modifying the established unicast link for the service to reuse the established unicast link, in case that the second pair of application layer IDs associated with the service is identical to the first pair of application layer IDs of the first terminal and the second terminal. establishing a unicast link with a second terminal, wherein the unicast link supports one or more service types associated with a first pair of application layer identifiers, IDs, of the first terminal and the second terminal; in case that a data transfer for a service is initiated, determining whether to reuse the established unicast link based on a second pair of application layer IDs associated with the service; and modifying the established unicast link for the service to reuse the established unicast link, in case that the second pair of application layer IDs associated with the service is identical to the first pair of application layer IDs of the first terminal and the second terminal.