A chip, wherein the chip is connectable to a controller, and the chip comprises: a first silicon-based driver die, a second silicon-based driver die, a first gallium nitride die, and a second gallium nitride die, wherein the first silicon-based driver die is connected to the first gallium nitride die, the second silicon-based driver die is connected to the second gallium nitride die, and the first gallium nitride die is connected to the second silicon-based driver die; the first silicon-based driver die is connectable to a first output terminal of the controller and a second output terminal of the controller, a pulse signal output by the first output terminal is used for driving a high-side gallium nitride power transistor, and a pulse signal output by the second output terminal is used for driving a low-side gallium nitride power transistor; a first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, a gallium nitride circuit and the low-side gallium nitride power transistor are integrated on the first gallium nitride die, the high-side gallium nitride power transistor is integrated on the second gallium nitride die, and the gallium nitride circuit is high-voltage resistant; the first silicon-based circuit is connected to the gallium nitride circuit, and the gallium nitride circuit is connected to the second silicon-based circuit; the first silicon-based circuit receives the pulse signal output by the first output terminal, and transfers the pulse signal to the gallium nitride circuit; the gallium nitride circuit is configured to share an input voltage of the second silicon-based circuit; and the gallium nitride circuit transfers the pulse signal to the second silicon-based circuit. a first silicon-based driver die, a second silicon-based driver die, a first gallium nitride die, and a second gallium nitride die, wherein the first silicon-based driver die is connected to the first gallium nitride die, the second silicon-based driver die is connected to the second gallium nitride die, and the first gallium nitride die is connected to the second silicon-based driver die; the first silicon-based driver die is connectable to a first output terminal of the controller and a second output terminal of the controller, a pulse signal output by the first output terminal is used for driving a high-side gallium nitride power transistor, and a pulse signal output by the second output terminal is used for driving a low-side gallium nitride power transistor; a first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, a gallium nitride circuit and the low-side gallium nitride power transistor are integrated on the first gallium nitride die, the high-side gallium nitride power transistor is integrated on the second gallium nitride die, and the gallium nitride circuit is high-voltage resistant; the first silicon-based circuit is connected to the gallium nitride circuit, and the gallium nitride circuit is connected to the second silicon-based circuit; the first silicon-based circuit receives the pulse signal output by the first output terminal, and transfers the pulse signal to the gallium nitride circuit; the gallium nitride circuit is configured to share an input voltage of the second silicon-based circuit; and the gallium nitride circuit transfers the pulse signal to the second silicon-based circuit.