mhurhangee/ep-ind-claims huggingface dataset:
A process for detecting a neuron cell damage of a subject comprising: measuring a quantity of at least one neuron specific biomarker in a biological sample collected from the subject, wherein the synthesis of said biomarker is altered following neuron cell damage to the subject; and detecting a neuron cell damage based on the quantity of said at least one biomarker in said biological sample, wherein said biomarker is an autoantibody directed toward GFAP or breakdown products thereof; wherein said neuron cell damage is caused by traumatic brain injury. measuring a quantity of at least one neuron specific biomarker in a biological sample collected from the subject, wherein the synthesis of said biomarker is altered following neuron cell damage to the subject; and detecting a neuron cell damage based on the quantity of said at least one biomarker in said biological sample, wherein said biomarker is an autoantibody directed toward GFAP or breakdown products thereof; wherein said neuron cell damage is caused by traumatic brain injury.
A luminaire comprising: a flexible surface; a solid state light emitting device mounted to the surface, the light emitting device including at least first and second panel portions (124, 128), the first and second panel portions (124, 128) being conformable; and a conforming mechanism for curving the first and second panel portions (124, 128), characterized in that the conforming mechanism includes first and second arms (142, 144) extending from a central actuator, the first and second arms (142, 144) secured at distal ends to the flexible surface, inner ends of the first and second arms (142, 144) each include a spur gear that engages with a worm gear, and rotation of the worm gear imparts rotary motion to the spur gears which extends or refracts the first and second arms (142, 144) to impart a concave curvature or a convex curvature to the first and second panel portions (124, 128). a flexible surface; a solid state light emitting device mounted to the surface, the light emitting device including at least first and second panel portions (124, 128), the first and second panel portions (124, 128) being conformable; and a conforming mechanism for curving the first and second panel portions (124, 128), characterized in that the conforming mechanism includes first and second arms (142, 144) extending from a central actuator, the first and second arms (142, 144) secured at distal ends to the flexible surface, inner ends of the first and second arms (142, 144) each include a spur gear that engages with a worm gear, and rotation of the worm gear imparts rotary motion to the spur gears which extends or refracts the first and second arms (142, 144) to impart a concave curvature or a convex curvature to the first and second panel portions (124, 128).
A method for transmitting a paging message by a base station in a wireless communication system, the method comprising: transmitting, to a terminal, first information indicating a first discontinuous reception, DRX, cycle, the first information comprising a value N2 related to the first DRX cycle; transmitting, to the terminal, second information indicating a second DRX cycle; determining, based on the first information, a time for which a paging message is to be transmitted for the terminal; and transmitting (471a-478a), to the terminal, the paging message, based on the second DRX cycle, during the determined time of a timer considering the value N2, wherein a length of the first DRX cycle is a multiple N2 of a length of the second DRX cycle. transmitting, to a terminal, first information indicating a first discontinuous reception, DRX, cycle, the first information comprising a value N2 related to the first DRX cycle; transmitting, to the terminal, second information indicating a second DRX cycle; determining, based on the first information, a time for which a paging message is to be transmitted for the terminal; and transmitting (471a-478a), to the terminal, the paging message, based on the second DRX cycle, during the determined time of a timer considering the value N2, wherein a length of the first DRX cycle is a multiple N2 of a length of the second DRX cycle.
A micron-scale monocrystal film, comprising a substrate layer; and a micron-scale monocrystal film layer located on the substrate layer wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer includes a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron-scale monocrystal film layer, wherein the transition layer includes H and an element of at least one kind of plasma gases used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer, characterized in that, the concentration of H in the transition layer ranges from 1 × 10 20 to 1 × 10 22 atoms/cm 3, and the concentration of H has a maximum value in the transition layer, and from the position with maximum value, the concentration of H gradually decreases toward the micron-scale monocrystal film layer and substrate layer; wherein the first transition layer and second transition layer each have a thickness ranging from 0.5 to 10 nm. a micron-scale monocrystal film layer located on the substrate layer wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer includes a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron-scale monocrystal film layer, wherein the transition layer includes H and an element of at least one kind of plasma gases used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer, characterized in that, the concentration of H in the transition layer ranges from 1 × 10 20 to 1 × 10 22 atoms/cm 3, and the concentration of H has a maximum value in the transition layer, and from the position with maximum value, the concentration of H gradually decreases toward the micron-scale monocrystal film layer and substrate layer; wherein the first transition layer and second transition layer each have a thickness ranging from 0.5 to 10 nm.
An IC tag issuing apparatus comprising: a pre-processing device configured to write identification data to IC tags aligned as an IC tag continuous body; a printing device configured to print print data on the IC tags to which the identification data has been written; a post-processing device configured to read and verify the identification data written to the IC tags; and conveying means configured to convey the IC tag continuous body, characterized in that the conveying means includes: a tractor feeder unit (61, 64) configured to convey the IC tag continuous body by engaging and disengaging feed pins (61e, 64e) in sprocket holes formed in the IC tag continuous body; and a negative pressure conveyance unit (62, 63, 65, 67) configured to convey the IC tag continuous body while suctioning the IC tag continuous body to a conveyance belt (62c, 63c, 65c, 67c); and the printing device is configured to perform printing on the IC tags by optically fixing a toner image transferred to the IC tags in a non-contact manner. a pre-processing device configured to write identification data to IC tags aligned as an IC tag continuous body; a printing device configured to print print data on the IC tags to which the identification data has been written; a post-processing device configured to read and verify the identification data written to the IC tags; and conveying means configured to convey the IC tag continuous body, characterized in that the conveying means includes: a tractor feeder unit (61, 64) configured to convey the IC tag continuous body by engaging and disengaging feed pins (61e, 64e) in sprocket holes formed in the IC tag continuous body; and a negative pressure conveyance unit (62, 63, 65, 67) configured to convey the IC tag continuous body while suctioning the IC tag continuous body to a conveyance belt (62c, 63c, 65c, 67c); and the printing device is configured to perform printing on the IC tags by optically fixing a toner image transferred to the IC tags in a non-contact manner. a tractor feeder unit (61, 64) configured to convey the IC tag continuous body by engaging and disengaging feed pins (61e, 64e) in sprocket holes formed in the IC tag continuous body; and a negative pressure conveyance unit (62, 63, 65, 67) configured to convey the IC tag continuous body while suctioning the IC tag continuous body to a conveyance belt (62c, 63c, 65c, 67c); and the printing device is configured to perform printing on the IC tags by optically fixing a toner image transferred to the IC tags in a non-contact manner.
A method for manufacturing a III-V engineered substrate comprising: providing a base substrate comprising an upper layer made of a first III-V compound with a crystal orientation being any of the crystallographic planes, or any of their crystallographic equivalent planes, epitaxially growing an intermediate layer comprising epitaxially growing at least a buffer layer made of a second III-V compound, wherein the intermediate layer is overlying and in contact with the upper layer of the base substrate and, thereafter, epitaxially growing a pseudomorphic passivation layer made of a group IV semiconductor material, wherein the pseudomorphic passivation layer is overlying and in contact with the intermediate layer, and has a thickness below a critical thickness such that it is lattice matched with the intermediate layer; and depositing a high-k dielectric layer on top of said pseudomorphic passivation layer, suitable as a gate dielectric in a transistor structure, wherein the first semiconductor compound is GaAs or InP wherein the second III-V compound is In x Ga (1-x) As, with 0<x<1, and wherein the group IV semiconductor material is Ge. providing a base substrate comprising an upper layer made of a first III-V compound with a crystal orientation being any of the crystallographic planes, or any of their crystallographic equivalent planes, epitaxially growing an intermediate layer comprising epitaxially growing at least a buffer layer made of a second III-V compound, wherein the intermediate layer is overlying and in contact with the upper layer of the base substrate and, thereafter, epitaxially growing a pseudomorphic passivation layer made of a group IV semiconductor material, wherein the pseudomorphic passivation layer is overlying and in contact with the intermediate layer, and has a thickness below a critical thickness such that it is lattice matched with the intermediate layer; and depositing a high-k dielectric layer on top of said pseudomorphic passivation layer, suitable as a gate dielectric in a transistor structure, wherein the first semiconductor compound is GaAs or InP wherein the second III-V compound is In x Ga (1-x) As, with 0<x<1, and wherein the group IV semiconductor material is Ge.
Kitchen scale (1, 101) comprising control keys (10, 11, 12, 13, 110, 111, 112, 113) for selecting a function such as taring, liquid weighing, solid weighing or storing a measurement, during a step for carrying out a weighing cycle, wherein the said scale includes a device for identifying at least one control key, driven by an electronic circuit, characterised in that a single control key (10, 11, 12, 13, 110, 111, 112, 113) corresponding to a single function thereof is identified as the next function that is the most likely to be implemented by an operation step of a weighing cycle.
A sensor element for recording a temperature of an object, comprising: - A substrate, wherein the substrate comprises a base area that defines a first plane; - A temperature sensor that is attached to the substrate on a first temperature plane and is configured to record the temperature of the object, wherein the first temperature plane is arranged on the first plane or essentially parallel to the first plane; - At least one sensor that is attached on a first section of the substrate and used to determine a difference in temperature within the first section; and - A first passivation that is attached to the substrate and covers the substrate, the temperature sensor, and the sensor for determining the difference in temperature, wherein the sensor for determining the difference in temperature comprises a first thermal element that itself comprises a conductor pair (TE1, TE2) produced from different material, wherein the conductor pair (TE1, TE2) exhibits a contacting point on the first temperature plane and a reference point that is set at a distance away the contacting point, and wherein the thermal element is configured in such way that it generates an output voltage, wherein said output voltage represents a measurement of a difference in temperature between the contacting point and the reference point, characterized in that the thermal element is attached in such a way that the contacting point and the reference point are each arranged on the first temperature plane. - A substrate, wherein the substrate comprises a base area that defines a first plane; - A temperature sensor that is attached to the substrate on a first temperature plane and is configured to record the temperature of the object, wherein the first temperature plane is arranged on the first plane or essentially parallel to the first plane; - At least one sensor that is attached on a first section of the substrate and used to determine a difference in temperature within the first section; and - A first passivation that is attached to the substrate and covers the substrate, the temperature sensor, and the sensor for determining the difference in temperature, wherein the sensor for determining the difference in temperature comprises a first thermal element that itself comprises a conductor pair (TE1, TE2) produced from different material, wherein the conductor pair (TE1, TE2) exhibits a contacting point on the first temperature plane and a reference point that is set at a distance away the contacting point, and wherein the thermal element is configured in such way that it generates an output voltage, wherein said output voltage represents a measurement of a difference in temperature between the contacting point and the reference point, characterized in that the thermal element is attached in such a way that the contacting point and the reference point are each arranged on the first temperature plane.
A communication device comprising: information communication means (200, 201, 700, 702, 1000, 1001, 1100, 1102) for executing non-contact data communication with another communication device; and power transmission means (206, 207, 700, 707, 1006, 1007, 1100, 1107) for executing non-contact power transmission processing for transferring a power to the other communication device, characterized by: first control means S608, S610, S908, S910) for controlling a communication period by the information communication means and a non-communication period; and second control means for controlling a power transmission by the power transmission means in synchronization with the communication period or the non-communication period, wherein the information communication means communicates information indicating end of the power transmission. information communication means (200, 201, 700, 702, 1000, 1001, 1100, 1102) for executing non-contact data communication with another communication device; and power transmission means (206, 207, 700, 707, 1006, 1007, 1100, 1107) for executing non-contact power transmission processing for transferring a power to the other communication device, characterized by: first control means S608, S610, S908, S910) for controlling a communication period by the information communication means and a non-communication period; and first control means S608, S610, S908, S910) for controlling a communication period by the information communication means and a non-communication period; and second control means for controlling a power transmission by the power transmission means in synchronization with the communication period or the non-communication period, wherein the information communication means communicates information indicating end of the power transmission.
An electrical reciprocating saw, comprising a front main body portion and a rear main body portion angled to each other and forming a tool main body having an elongated shape, a plurality of grasping portions (G1, G2, G3), wherein the plurality of grasping portions (G1, G2, G3) comprises a first grasping portion formed in a front half of the front main body portion, a second grasping portion formed in a rear half of the front main body portion, and a third grasping portion formed in a front half of the rear main body portion, wherein each of the grasping portions (G1, G2, G3) is configured to be grasped by one hand of a user, and a manipulating member (20, 22; 35) adapted to be manipulated by a user's finger of the hand grasping the grasping portion to actuate and deactuate a drive source of the electrical reciprocating saw, characterized in that the manipulating member (20, 22; 35) is positioned along a lower surface of the front main body portion and a lower surface of the rear main body portion, and wherein the manipulating member (20, 22; 35) is positioned at the front main body portion and the rear main body portion so as to extend from a rear portion of the first grasping portion to a front portion of the third grasping portion such that the user can operate the electrical reciprocating saw with one hand by grasping the first grasping portion with the one hand, such that the user can operate the electrical reciprocating saw with the one hand by grasping the second grasping portion with the one hand, and such that the user can operate the electrical reciprocating saw with the one hand by grasping the third grasping portion with the one hand.
An automotive internal combustion engine electronic control unit required to perform safety-related functions with a predetermined automotive safety integrity level (ASIL); wherein the automotive electronic control unit comprises a microcontroller (μC) and an integrated circuit (U-Chip) distinct from and communicating with the microcontroller (μC); wherein the microcontroller (μC) is designed to perform one or more safety-related functions with the same automotive safety integrity level as the one required to the automotive electronic control unit; wherein the integrated circuit (U-Chip) is designed to perform one or more safety-related functions with an automotive safety integrity level lower than that of the microcontroller (μC); wherein the integrated circuit (U-Chip) is further designed to perform, for each performed safety-related function, a corresponding diagnosis function (DIAG) designed to detect failures in the performance of the safety-related function; and wherein the microcontroller (μC) is designed to perform, for each performed diagnosis function (DIAG), a corresponding monitoring function designed to monitor the performance of the corresponding diagnosis function (DIAG) by the integrated circuit (U-Chip) to detect failures that may compromise the diagnostic capability of the diagnosis function (DIAG).
A method of measuring cavity loss of a resonant optical cavity over a range of frequencies by exciting one or a plurality of cavity modes of the cavity in a controlled manner, the cavity having at least two cavity mirrors, one of which is a cavity coupling mirror, using a laser that emits continuous wave laser light, wherein the laser is responsive to optical feedback light emerging from the cavity, and wherein a mean optical frequency of the laser is adjustable over a range of frequencies, the method comprising: coupling the laser light to the cavity via the cavity coupling mirror using mode matching optics, the cavity having a plurality of optical resonance cavity modes that have frequencies within said range of frequencies of the laser; applying to the laser a drive current having a predetermined current profile so as to adjust the mean optical frequency of the laser and to excite desired cavity modes in an excitation order as determined based on the shape of the applied current profile; wherein the laser drive current comprises a series of current pulses, wherein an end portion of one current pulse sets the laser drive current below a laser threshold value, and wherein the current profile of the next current pulse applied to the laser includes a compensation pulse portion that drives the laser at a current level sufficient to compensate for some or all of the laser heat lost while the laser drive current was below the laser threshold value and to excite the next mode in said excitation order, such that the repetition rate of measuring events during an excitation cycle is increased; and detecting dynamics of the intra cavity optical power of light circulating in the cavity after a cavity mode has been excited. coupling the laser light to the cavity via the cavity coupling mirror using mode matching optics, the cavity having a plurality of optical resonance cavity modes that have frequencies within said range of frequencies of the laser; applying to the laser a drive current having a predetermined current profile so as to adjust the mean optical frequency of the laser and to excite desired cavity modes in an excitation order as determined based on the shape of the applied current profile; wherein the laser drive current comprises a series of current pulses, wherein an end portion of one current pulse sets the laser drive current below a laser threshold value, and wherein the current profile of the next current pulse applied to the laser includes a compensation pulse portion that drives the laser at a current level sufficient to compensate for some or all of the laser heat lost while the laser drive current was below the laser threshold value and to excite the next mode in said excitation order, such that the repetition rate of measuring events during an excitation cycle is increased; and detecting dynamics of the intra cavity optical power of light circulating in the cavity after a cavity mode has been excited.