An electronic power device, comprising: a substrate of silicon carbide (SiC), having a front surface and a rear surface, which lie in respective planes parallel to a horizontal plane (xy) and are opposite to one another along a vertical axis (z) transverse to said horizontal plane (xy), the substrate including an active area (A'), arranged in which are, at said front surface, a number of doped regions, and an edge area (A"), being not active, distinct from and surrounding said active area (A'); a dielectric region, arranged above said front surface, at least in said edge area (A"); a passivation layer arranged above the front surface of said substrate, in contact with said dielectric region in said edge area (A"), wherein said passivation layer comprises at least one anchorage region that extends above the front surface of said substrate, throughout the thickness of said dielectric region at said edge area (A") and up to said front surface, and is configured to define a mechanical anchorage for said passivation layer, said anchorage region comprises: a first portion, arranged within said dielectric region and having a first width (W 1) along an axis of said horizontal plane (xy); and a second portion, overlying said first portion, centrally thereto, and having a second width (W 2); said first portion being arranged in direct contact, at the top, with a first and a second abutment element (18a, 18b), which are arranged laterally and on opposite side of said second portion characterized in that said second width (w 2) is smaller than said first width (w 1) along said axis of the horizontal plane (xy). a substrate of silicon carbide (SiC), having a front surface and a rear surface, which lie in respective planes parallel to a horizontal plane (xy) and are opposite to one another along a vertical axis (z) transverse to said horizontal plane (xy), the substrate including an active area (A'), arranged in which are, at said front surface, a number of doped regions, and an edge area (A"), being not active, distinct from and surrounding said active area (A'); a dielectric region, arranged above said front surface, at least in said edge area (A"); a passivation layer arranged above the front surface of said substrate, in contact with said dielectric region in said edge area (A"), wherein said passivation layer comprises at least one anchorage region that extends above the front surface of said substrate, throughout the thickness of said dielectric region at said edge area (A") and up to said front surface, and is configured to define a mechanical anchorage for said passivation layer, said anchorage region comprises: a first portion, arranged within said dielectric region and having a first width (W 1) along an axis of said horizontal plane (xy); and a second portion, overlying said first portion, centrally thereto, and having a second width (W 2); said first portion being arranged in direct contact, at the top, with a first and a second abutment element (18a, 18b), which are arranged laterally and on opposite side of said second portion characterized in that said second width (w 2) is smaller than said first width (w 1) along said axis of the horizontal plane (xy).