A method of forming a transistor in a semiconductor active area with varying resistance lightly doped regions, comprising the steps of: forming a gate structure in a fixed relationship to the semiconductor active area and comprising a first sidewall and a second sidewall and thereby defining a first source/drain region adjacent the first sidewall and a second source/drain region adjacent the second sidewall; and forming a lightly doped diffused region in the first source/drain region and extending under the gate structure, comprising the step of forming the lightly doped diffused region to comprise the varying resistance in a direction parallel to the gate structure; wherein the step of forming a lightly doped diffused region comprises: selectively masking the first source/drain region such that a portion of the first source/drain region is covered and a portion of the first source/drain region is exposed; and during the selectively masking step, directing dopants toward the first source/drain region wherein as a result of the directing step a first concentration of dopants are implanted in the portion of the first source/drain region that is exposed while a different concentration of dopants are implanted in the portion of the first source/drain region that is covered, wherein the first concentration is greater than the different concentration, the different concentration of dopants implanted in the portion of the first source/drain region that is covered resulting in a larger overall effective source/drain resistance of the transistor as compared to the transistor having an active area not masked by the mask. forming a gate structure in a fixed relationship to the semiconductor active area and comprising a first sidewall and a second sidewall and thereby defining a first source/drain region adjacent the first sidewall and a second source/drain region adjacent the second sidewall; and forming a lightly doped diffused region in the first source/drain region and extending under the gate structure, comprising the step of forming the lightly doped diffused region to comprise the varying resistance in a direction parallel to the gate structure; wherein the step of forming a lightly doped diffused region comprises: selectively masking the first source/drain region such that a portion of the first source/drain region is covered and a portion of the first source/drain region is exposed; and during the selectively masking step, directing dopants toward the first source/drain region wherein as a result of the directing step a first concentration of dopants are implanted in the portion of the first source/drain region that is exposed while a different concentration of dopants are implanted in the portion of the first source/drain region that is covered, wherein the first concentration is greater than the different concentration, the different concentration of dopants implanted in the portion of the first source/drain region that is covered resulting in a larger overall effective source/drain resistance of the transistor as compared to the transistor having an active area not masked by the mask. selectively masking the first source/drain region such that a portion of the first source/drain region is covered and a portion of the first source/drain region is exposed; and during the selectively masking step, directing dopants toward the first source/drain region wherein as a result of the directing step a first concentration of dopants are implanted in the portion of the first source/drain region that is exposed while a different concentration of dopants are implanted in the portion of the first source/drain region that is covered, wherein the first concentration is greater than the different concentration, the different concentration of dopants implanted in the portion of the first source/drain region that is covered resulting in a larger overall effective source/drain resistance of the transistor as compared to the transistor having an active area not masked by the mask.