Self-reference-based MRAM element comprising a first magnetic tunnel junction and a second magnetic tunnel junction, each having a magnetoresistance that can be varied; and a field line for passing a field current destined to vary the magnetoresistance of the first and second magnetic tunnel junctions (2, 2'); the field line comprising a first branch and a second branch (5") both branch (5', 5") comprises a cladding; the first branch being arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch (5") being electrically connected in parallel with the first branch and arranged for passing a second portion (51") of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction; wherein each of said first and second branches (5', 5") has a rectangular cross section, and wherein the cladding is comprised on three sides of the rectangular cross section so that a first portion of magnetic field generated by passing the first portion of field current in the first branch can only vary the magnetization of the first magnetic tunnel junction, and a second portion (52") of magnetic field generated by passing the second portion (51") of field current in the second branch (5") can only vary the magnetization of the second magnetic tunnel junction, and, wherein the self-reference-based MRAM element further comprises one or more straps (7, 7') and wherein first magnetic tunnel junction 2 and second magnetic tunnel junction 2' are arranged above the one or more straps (7, 7') and characterized in that the first branch 5' and second branch 5" are arranged to be below the one or more straps (7,7') so that the field line is confined to being below the first and second first magnetic tunnel junction (2,2') only. a first magnetic tunnel junction and a second magnetic tunnel junction, each having a magnetoresistance that can be varied; and a field line for passing a field current destined to vary the magnetoresistance of the first and second magnetic tunnel junctions (2, 2'); the field line comprising a first branch and a second branch (5") both branch (5', 5") comprises a cladding; the first branch being arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch (5") being electrically connected in parallel with the first branch and arranged for passing a second portion (51") of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction; wherein each of said first and second branches (5', 5") has a rectangular cross section, and wherein the cladding is comprised on three sides of the rectangular cross section so that a first portion of magnetic field generated by passing the first portion of field current in the first branch can only vary the magnetization of the first magnetic tunnel junction, and a second portion (52") of magnetic field generated by passing the second portion (51") of field current in the second branch (5") can only vary the magnetization of the second magnetic tunnel junction, and, wherein the self-reference-based MRAM element further comprises one or more straps (7, 7') and wherein first magnetic tunnel junction 2 and second magnetic tunnel junction 2' are arranged above the one or more straps (7, 7') and characterized in that the first branch 5' and second branch 5" are arranged to be below the one or more straps (7,7') so that the field line is confined to being below the first and second first magnetic tunnel junction (2,2') only.