A method of electrically aging a plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) to reduce their leakage current, in an AMOLED pixel circuit, comprising: determining, for each PMOS thin film transistor of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), amplitudes of a respective set of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) required by the AMOLED pixel circuit such that an aging voltage amplitude condition is satisfied for the PMOS thin film transistor, wherein the aging voltage amplitude condition comprises: a first voltage Vg applied to a gate of the PMOS thin film transistor having an amplitude of A volts, a second voltage Vs applied to a source of the PMOS thin film transistor having an amplitude of (A-40) to (A-8) volts, and a third voltage Vd applied to a drain of the PMOS thin film transistor having an amplitude of (A-80) to (A-16) volts, wherein Vd-Vs<0; generating, for each of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), the respective set of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) that, satisfy the determined amplitudes; and applying the generated respective sets of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) to the AMOLED pixel circuit to electrically age the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) individually, wherein each of the sets of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) is applied to the AMOLED pixel circuit so that application of the first voltage Vg, the second voltage Vs and the third voltage Vd to a respective one of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) is maintained for a predetermined time period, wherein the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) are pre-determined as in need of reduction of leakage currents, the method further characterized by: pre-determining that the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) are in need of reduction of leakage currents, in response to respective ON-OFF time ratios of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), when the AMOLED pixel circuit is in normal operation, being not greater than a predetermined threshold. determining, for each PMOS thin film transistor of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), amplitudes of a respective set of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) required by the AMOLED pixel circuit such that an aging voltage amplitude condition is satisfied for the PMOS thin film transistor, wherein the aging voltage amplitude condition comprises: a first voltage Vg applied to a gate of the PMOS thin film transistor having an amplitude of A volts, a second voltage Vs applied to a source of the PMOS thin film transistor having an amplitude of (A-40) to (A-8) volts, and a third voltage Vd applied to a drain of the PMOS thin film transistor having an amplitude of (A-80) to (A-16) volts, wherein Vd-Vs<0; generating, for each of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), the respective set of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) that, satisfy the determined amplitudes; and applying the generated respective sets of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) to the AMOLED pixel circuit to electrically age the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) individually, wherein each of the sets of operation signals (E1, E2, Re, G, Vdd, Vss, Vdata, Vint) is applied to the AMOLED pixel circuit so that application of the first voltage Vg, the second voltage Vs and the third voltage Vd to a respective one of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) is maintained for a predetermined time period, wherein the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) are pre-determined as in need of reduction of leakage currents, the method further characterized by: pre-determining that the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6) are in need of reduction of leakage currents, in response to respective ON-OFF time ratios of the plurality of PMOS thin film transistors (M1, M2, M3, M4, M5, M6), when the AMOLED pixel circuit is in normal operation, being not greater than a predetermined threshold.