A method for the production of structured contacts arranged on one side in a layered arrangement for a photovoltaic component, which has at least one substrate, a first doped semiconductor layer of one conductivity type, and a second doped semiconductor layer of an opposite conductivity type, having at least the following method steps: - application of a masking layer arrangement (3, 4) with at least one masking layer onto the first doped semiconductor layer arranged on the substrate, - generation of structures for contact apertures in the first doped semiconductor layer in the masking layer arrangement, - subsequent etching of the structured masking layer arrangement (3, 4) for the generation of contact apertures in the first doped semiconductor layer, - thereafter a full-surface conformal application of the second doped semiconductor layer of an opposite conductivity type, and - followed by an at least partial removal of the remaining masking layer arrangement (3, 4) and the second doped semiconductor layer so as to expose the structured first doped semiconductor layer, and - a final introduction of contact material into the contact apertures and onto the exposed first doped semiconductor layer, wherein a doped silicon-rich layer, which is nanocrystalline or amorphous, is used as the first doped semiconductor layer of one conductivity type, and as the second doped semiconductor layer of an opposite conductivity type, characterised in that, - a single layer is used for the at least one masking layer, wherein the single layer is formed from SiO x N y and has a low gradient in silicon content in the vicinity of the substrate and increasing in the direction of the second doped semiconductor layer to be applied, - the etching of the structured masking layer arrangement with an etching of the structured single layer is executed in at least one etching step in a silicon-etching solution, at least for purposes of removing the first doped silicon-rich layer in the structures for contact apertures, and at the same time the remaining exposed surface of the single layer is roughened, - the at least partial removal of the remaining single layer and of the second doped silicon-rich layer arranged on its rough surface for purposes of exposing the structured first silicon-rich layer is executed by means of a lift-off process in an HF-containing solution. - application of a masking layer arrangement (3, 4) with at least one masking layer onto the first doped semiconductor layer arranged on the substrate, - generation of structures for contact apertures in the first doped semiconductor layer in the masking layer arrangement, - subsequent etching of the structured masking layer arrangement (3, 4) for the generation of contact apertures in the first doped semiconductor layer, - thereafter a full-surface conformal application of the second doped semiconductor layer of an opposite conductivity type, and - followed by an at least partial removal of the remaining masking layer arrangement (3, 4) and the second doped semiconductor layer so as to expose the structured first doped semiconductor layer, and - a final introduction of contact material into the contact apertures and onto the exposed first doped semiconductor layer, wherein a doped silicon-rich layer, which is nanocrystalline or amorphous, is used as the first doped semiconductor layer of one conductivity type, and as the second doped semiconductor layer of an opposite conductivity type, characterised in that, - a single layer is used for the at least one masking layer, wherein the single layer is formed from SiO x N y and has a low gradient in silicon content in the vicinity of the substrate and increasing in the direction of the second doped semiconductor layer to be applied, - the etching of the structured masking layer arrangement with an etching of the structured single layer is executed in at least one etching step in a silicon-etching solution, at least for purposes of removing the first doped silicon-rich layer in the structures for contact apertures, and at the same time the remaining exposed surface of the single layer is roughened, - the at least partial removal of the remaining single layer and of the second doped silicon-rich layer arranged on its rough surface for purposes of exposing the structured first silicon-rich layer is executed by means of a lift-off process in an HF-containing solution.