Solar cell with a heterojunction, a front side provided for an incident of light and a back side located opposite the front side, comprising: - a crystalline semiconductor substrate of a first conductivity type; - at least one amorphous, nano and/or microcrystalline semiconductor layer or layer sequence (3, 5) on a frontal surface of the semiconductor substrate, forming either a front side emitter of a second conductivity type opposite to the first conductivity type or a front side surface field layer of the first conductivity type; - at least one second amorphous, nano and/or micro crystalline semiconductor layer or layer sequence (4, 6) on a rearward surface of the semiconductor substrate, forming either a back side surface field layer of the first conductivity type or a back side emitter of the second conductivity type; - at least one electrically conductive, transparent front side electrode layer on the front side emitter or the front side surface field layer and at least one electrically conductive, transparent back side electrode layer on the back side surface field layer or the back side emitter; - a frontal metallic contact layer grid structure for electrically contacting the front side emitter or the front side surface field layer; - an electrically non-conductive, transparent dielectric front side cover layer deposited by PECVD deposition on its frontal face after forming the frontal contact layer grid structure; and - a back side metallization on the back side electrode layer; characterized in that, a surface selective PECVD deposition or a Hotwire-CVD is used for the deposition of the front side cover layer and the front side cover layer is deposited with such a thickness that the front side cover layer forms a closed layer directly after its layer deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure, but not on the frontal contact layer grid structure, wherein the electrically conductive, transparent front-side electrode layer is a TCO layer; for the formation of the front side contact layer grid structure, a material is selected which consists predominantly of silver or copper and is printed as a finger structure using a paste; for the deposition of the front side cover layer at least one SiO x, SiN x, SiO x N y layer or a layer or layer sequence consisting of a combination of at least two of the aforementioned materials is used; the front side cover layer is deposited using a silane chemistry; and the front side cover layer is deposited in a temperature range between 50°C and 250°C. - a crystalline semiconductor substrate of a first conductivity type; - at least one amorphous, nano and/or microcrystalline semiconductor layer or layer sequence (3, 5) on a frontal surface of the semiconductor substrate, forming either a front side emitter of a second conductivity type opposite to the first conductivity type or a front side surface field layer of the first conductivity type; - at least one second amorphous, nano and/or micro crystalline semiconductor layer or layer sequence (4, 6) on a rearward surface of the semiconductor substrate, forming either a back side surface field layer of the first conductivity type or a back side emitter of the second conductivity type; - at least one electrically conductive, transparent front side electrode layer on the front side emitter or the front side surface field layer and at least one electrically conductive, transparent back side electrode layer on the back side surface field layer or the back side emitter; - a frontal metallic contact layer grid structure for electrically contacting the front side emitter or the front side surface field layer; - an electrically non-conductive, transparent dielectric front side cover layer deposited by PECVD deposition on its frontal face after forming the frontal contact layer grid structure; and - a back side metallization on the back side electrode layer; a surface selective PECVD deposition or a Hotwire-CVD is used for the deposition of the front side cover layer and the front side cover layer is deposited with such a thickness that the front side cover layer forms a closed layer directly after its layer deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure, but not on the frontal contact layer grid structure, wherein the electrically conductive, transparent front-side electrode layer is a TCO layer; for the formation of the front side contact layer grid structure, a material is selected which consists predominantly of silver or copper and is printed as a finger structure using a paste; for the deposition of the front side cover layer at least one SiO x, SiN x, SiO x N y layer or a layer or layer sequence consisting of a combination of at least two of the aforementioned materials is used; the front side cover layer is deposited using a silane chemistry; and the front side cover layer is deposited in a temperature range between 50°C and 250°C.