A reading method of a resistive memory apparatus, comprising: applying a reading pulse twice to a resistive memory cell to sequentially obtain a first reading resistance and a second reading resistance of the resistive memory cell at different temperatures (T1, T2); determining a resistive state (HRS, LRS) of the second reading resistance according to values of the reading resistances (R1, R2) and degrees of the temperatures (T1, T2) corresponding to the reading resistances (R1, R2); and determining a logic level of storage data of the resistive memory cell according to the resistive state (HRS, LRS) of the second reading resistance, characterised that: between a step of obtaining the first reading resistance and a step of obtaining the second reading resistance, obtaining a first temperature corresponding to the first reading resistance and adjusting the temperature of the resistive memory cell to obtain a second temperature corresponding to the second reading resistance, and the step of adjusting the temperature of the resistive memory cell comprises: determining whether the first temperature is less than a temperature threshold (Tm); if the first temperature is less than the temperature threshold (Tm), raising the temperature of the resistive memory cell; and if the first temperature is greater than or equal to the temperature threshold (Tm), lowering the temperature of the resistive memory cell. applying a reading pulse twice to a resistive memory cell to sequentially obtain a first reading resistance and a second reading resistance of the resistive memory cell at different temperatures (T1, T2); determining a resistive state (HRS, LRS) of the second reading resistance according to values of the reading resistances (R1, R2) and degrees of the temperatures (T1, T2) corresponding to the reading resistances (R1, R2); and determining a logic level of storage data of the resistive memory cell according to the resistive state (HRS, LRS) of the second reading resistance, characterised that: between a step of obtaining the first reading resistance and a step of obtaining the second reading resistance, obtaining a first temperature corresponding to the first reading resistance and adjusting the temperature of the resistive memory cell to obtain a second temperature corresponding to the second reading resistance, and the step of adjusting the temperature of the resistive memory cell comprises: determining whether the first temperature is less than a temperature threshold (Tm); if the first temperature is less than the temperature threshold (Tm), raising the temperature of the resistive memory cell; and if the first temperature is greater than or equal to the temperature threshold (Tm), lowering the temperature of the resistive memory cell. between a step of obtaining the first reading resistance and a step of obtaining the second reading resistance, obtaining a first temperature corresponding to the first reading resistance and adjusting the temperature of the resistive memory cell to obtain a second temperature corresponding to the second reading resistance, and the step of adjusting the temperature of the resistive memory cell comprises: determining whether the first temperature is less than a temperature threshold (Tm); if the first temperature is less than the temperature threshold (Tm), raising the temperature of the resistive memory cell; and if the first temperature is greater than or equal to the temperature threshold (Tm), lowering the temperature of the resistive memory cell. determining whether the first temperature is less than a temperature threshold (Tm); if the first temperature is less than the temperature threshold (Tm), raising the temperature of the resistive memory cell; and if the first temperature is greater than or equal to the temperature threshold (Tm), lowering the temperature of the resistive memory cell.