A power semiconductor element gate driving circuit that is configured to perform ON/OFF control on main current of a power semiconductor element having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges and discharging the electric charges on the basis of an inputted gate signal, wherein the power semiconductor element gate driving circuit is further configured such that when the gate signal is switched to an OFF signal, control is performed such that gate current for discharging the electric charges from the gate electrode increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current and, the gate current for discharging the electric charges from the gate electrode is controlled on the basis of a difference between a temperature detection value obtained by detecting the temperature of the power semiconductor element and a current detection value which is a detection value of the main current, wherein the temperature detection value and the current detection value are each a value detected as a voltage relative to a reference potential, the temperature detection value is a positive voltage that decreases in association with increase in the temperature, and the current detection value is a negative voltage, an absolute value of which increases in association with increase in the main current, wherein the power semiconductor element gate driving circuit further comprises: - a first differential amplifier having a non-inversion input terminal to which the temperature detection value is inputted and an inversion input terminal to which the current detection value is inputted; and - a second differential amplifier having an inversion input terminal to which an output from the first differential amplifier is inputted, the gate current for discharging the electric charges from the gate electrode being controlled on the basis of an output from the second differential amplifier. the power semiconductor element gate driving circuit is further configured such that when the gate signal is switched to an OFF signal, control is performed such that gate current for discharging the electric charges from the gate electrode increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current and, the gate current for discharging the electric charges from the gate electrode is controlled on the basis of a difference between a temperature detection value obtained by detecting the temperature of the power semiconductor element and a current detection value which is a detection value of the main current, wherein the temperature detection value and the current detection value are each a value detected as a voltage relative to a reference potential, the temperature detection value is a positive voltage that decreases in association with increase in the temperature, and the current detection value is a negative voltage, an absolute value of which increases in association with increase in the main current, wherein the power semiconductor element gate driving circuit further comprises: - a first differential amplifier having - a first differential amplifier having a non-inversion input terminal to which the temperature detection value is inputted and an inversion input terminal to which the current detection value is inputted; and - a second differential amplifier having an inversion input terminal to which an output from the first differential amplifier is inputted, the gate current for discharging the electric charges from the gate electrode being controlled on the basis of an output from the second differential amplifier. - a second differential amplifier having an inversion input terminal to which an output from the first differential amplifier is inputted, the gate current for discharging the electric charges from the gate electrode being controlled on the basis of an output from the second differential amplifier.