mhurhangee/ep-ind-claims huggingface dataset:
A pressure equalization label for sticking to a surface of a housing or any other object provided with a pressure equalization opening, the pressure equalization label comprising: - a first film for sticking to a surface provided with a pressure equalization opening, - an outer, second film and - an air-permeable membrane film disposed between the first film and the second film, characterized in that the first film has a recess intended to be positioned above a pressure equalization opening and a number of ventilation channels, and wherein each of the ventilation channels is separated from the recess by a film region of the first film, - the membrane film covering the recess and each of the film regions between the recess and the number of ventilation channels, and - wherein the outer, second film extends laterally beyond the membrane film, covers the number of ventilation channels of the first film laterally outside the membrane film at least in regions and spans a ventilation path which extends from that surface of the membrane film which faces the second film up to the number of ventilation channels of the first film. - a first film for sticking to a surface provided with a pressure equalization opening, - an outer, second film and - an air-permeable membrane film disposed between the first film and the second film, - the membrane film covering the recess and each of the film regions between the recess and the number of ventilation channels, and - wherein the outer, second film extends laterally beyond the membrane film, covers the number of ventilation channels of the first film laterally outside the membrane film at least in regions and spans a ventilation path which extends from that surface of the membrane film which faces the second film up to the number of ventilation channels of the first film.
A method of wireless communication, comprising: transmitting, by a user equipment, UE, a capability indication message to a network entity, the capability indication message comprising a sidelink capability for direct communication between the UE and one or more secondary UEs; receiving, at the UE, a configuration message from the network entity in response to the capability indication message, wherein the configuration message includes one or more configuration parameters based on the sidelink capability, wherein at least one of the configuration parameters indicates one or more bandwidth parts, BWPs, for the UE to establish a sidelink communication; and establishing the sidelink communication based on the one or more configuration parameters. transmitting, by a user equipment, UE, a capability indication message to a network entity, the capability indication message comprising a sidelink capability for direct communication between the UE and one or more secondary UEs; receiving, at the UE, a configuration message from the network entity in response to the capability indication message, wherein the configuration message includes one or more configuration parameters based on the sidelink capability, wherein at least one of the configuration parameters indicates one or more bandwidth parts, BWPs, for the UE to establish a sidelink communication; and establishing the sidelink communication based on the one or more configuration parameters.
A method for measuring and/or acquiring layer thicknesses and voids of one or more layers of a temporary bonded wafer stack on a plurality of measuring points distributed on the wafer stack and for processing the temporary bonded wafer stacks, with the following sequence: - arrangement of a measurement means for measuring and/or acquiring the layer thicknesses and voids of the layers of the wafer stack at the measuring points relative to a flat side of the wafer stack, - emission of signals in the form of electromagnetic waves or ultrasonic waves by a transmitter of the measurement means, and receiving the signals which have been reflected by the wafer stack by a receiver of the measurement means, - evaluation of the signals which have been received by the receiver by an evaluation unit, wherein signals reflected by at least two transitions between layers of the wafer stack are distinguised by the evaluation unit and their distance to a reference plane is determined, and wherein the movement of the wafer stack and/or of the measurement means parallel to the reference plane and thus the position of each measuring point along the reference plane is detectable, and - grinding of the wafer stack as far as no deviation of quality criteria has been determined. - arrangement of a measurement means for measuring and/or acquiring the layer thicknesses and voids of the layers of the wafer stack at the measuring points relative to a flat side of the wafer stack, - emission of signals in the form of electromagnetic waves or ultrasonic waves by a transmitter of the measurement means, and receiving the signals which have been reflected by the wafer stack by a receiver of the measurement means, - evaluation of the signals which have been received by the receiver by an evaluation unit, wherein signals reflected by at least two transitions between layers of the wafer stack are distinguised by the evaluation unit and their distance to a reference plane is determined, and wherein the movement of the wafer stack and/or of the measurement means parallel to the reference plane and thus the position of each measuring point along the reference plane is detectable, and - grinding of the wafer stack as far as no deviation of quality criteria has been determined.
A method for performing cell culture by culturing cells in an aqueous culture medium comprising poloxamers that prior to adding them to the cell culture medium have been treated by a) Dissolving the poloxamers in a solvent and contacting them with activated carbon b) Removing the activated carbon and the solvent a) Dissolving the poloxamers in a solvent and contacting them with activated carbon b) Removing the activated carbon and the solvent
A composition, which is a vibration-damping urethane resin composition comprising a castor oil polyol, an isocyanate and inorganic particles containing a phase change material.
Two-component mixing capsule for intake and for mixing two compositions with a capsule housing having a discharge opening (3.1) at its front end (2.1), the mixing capsule comprising a lower handhold element (4.1) rotatably mounted in the capsule housing and an upper handhold element (4.2) rotatably mounted in the capsule housing, the rotational axis of the handhold elements (4.1, 4.2) being approximately perpendicularly arranged to the longitudinal axis of the mixing capsule, and a rotatably mounted first mixing chamber being assigned to at least one of the two handhold elements, and a second mixing chamber being arranged in the capsule housing, characterised in that a sealing piston is arranged at the back end (2.3) in the capsule housing, the sealing piston being passable through the first mixing chamber and the second mixing chamber along the longitudinal axis of the mixing capsule when the first mixing chamber is coaxially oriented to the longitudinal axis of the mixing capsule.
A similarity assessment method of a performance sound, comprising: a probability density function generating process of dividing one performance sound into a sequence of frames each having a predetermined temporal length and also dividing another performance sound to be compared with said one performance sound into another sequence of frames each having the predetermined temporal length, and generating a probability density function of a fundamental frequency for each frame of the respective performance sounds; and a similarity assessment process of comparing the probability density function of a frame of said one performance sound with the probability density function of a frame of said another performance sound so as to assess a similarity between said one performance sound and said another performance sound, wherein the probability density function generating process uses a plurality of tone models which simulate various harmonic structures of sounds generated from a musical instrument and defines a weighted mixture of the tone models corresponding to various fundamental frequencies, and recurrently updates and optimizes respective weight values of the tone models so that a frequency distribution of the weighted mixture of the tone models represents frequency components of the performance sound, thereby outputting the optimized weight values as the probability density function of the fundamental frequency of the performance sound. a probability density function generating process of dividing one performance sound into a sequence of frames each having a predetermined temporal length and also dividing another performance sound to be compared with said one performance sound into another sequence of frames each having the predetermined temporal length, and generating a probability density function of a fundamental frequency for each frame of the respective performance sounds; and a similarity assessment process of comparing the probability density function of a frame of said one performance sound with the probability density function of a frame of said another performance sound so as to assess a similarity between said one performance sound and said another performance sound, wherein the probability density function generating process uses a plurality of tone models which simulate various harmonic structures of sounds generated from a musical instrument and defines a weighted mixture of the tone models corresponding to various fundamental frequencies, and recurrently updates and optimizes respective weight values of the tone models so that a frequency distribution of the weighted mixture of the tone models represents frequency components of the performance sound, thereby outputting the optimized weight values as the probability density function of the fundamental frequency of the performance sound.
A method of inversion driving a liquid crystal display panel having pixels and data lines connected to the pixels, the method comprising: outputting data voltages to the data lines wherein the data voltages flip polarity, each frame, with respect to a provided common voltage provided to the display panel according to a second driving frequency such that a practical common voltage (VCOMS) received at the pixels symmetrically increases and decreases, in a steady state and with respect to the provided common voltage (VCOM), between a maximum voltage and a minimum voltage due to data voltage polarity inversion, generating the driving frequency of the display panel based on input image data such that, during a first driving period, data voltages flip with a first driving frequency and during a second driving period, data voltages flip with the second driving frequency lower than the first driving frequency; characterized by inserting a single compensating frame between the first driving period and the second driving period wherein a length of the compensating frame is longer than a length of a frame corresponding to the first driving frequency and shorter than a length of a frame corresponding to the second driving frequency and wherein the length of the inserted single compensating frame is set so that a waveform of the practical common voltage (VCOMS) reaches the maximum voltage or the minimum voltage at its end. outputting data voltages to the data lines wherein the data voltages flip polarity, each frame, with respect to a provided common voltage provided to the display panel according to a second driving frequency such that a practical common voltage (VCOMS) received at the pixels symmetrically increases and decreases, in a steady state and with respect to the provided common voltage (VCOM), between a maximum voltage and a minimum voltage due to data voltage polarity inversion, generating the driving frequency of the display panel based on input image data such that, during a first driving period, data voltages flip with a first driving frequency and during a second driving period, data voltages flip with the second driving frequency lower than the first driving frequency; characterized by inserting a single compensating frame between the first driving period and the second driving period wherein a length of the compensating frame is longer than a length of a frame corresponding to the first driving frequency and shorter than a length of a frame corresponding to the second driving frequency and wherein the length of the inserted single compensating frame is set so that a waveform of the practical common voltage (VCOMS) reaches the maximum voltage or the minimum voltage at its end.
An organic metal compound, having a structure of Formula I or Formula II: wherein, R 1 is independently hydrogen, C 1-12 alkyl group, C 1-12 alkoxy group, amine, C 2-6 alkenyl group, C 2-6 alkynyl group, C 5-10 cycloalkyl group, C 3-12 heteroaryl group, or C 6-12 aryl group; R 2, R 3, R 4, and R 5 are independently hydrogen, halogen, C 1-12 alkyl group, C 1-12 alkoxy group, C 1-12 fluoroalkyl group, or two adjacent groups of R 2, R 3, R 4, and R 5 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; R 6 and R 7 are independent C 1-6 alkyl group, or phenyl group; R 8, R 9, R 10, and R 11 are independently hydrogen, halogen, C 1-12 alkyl group, C 1-12 fluoroalkyl group, or two adjacent groups of R 8, R 9, R 10, and R 11 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; R 12, R 13, R 14, and R 15 are independently hydrogen, halogen, C 1-12 alkyl group, C 1-12 fluoroalkyl group, or two adjacent groups of R 12, R 13, R 14, and R 15 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; m is 1 or 2; and, n is 0 or 1.
A water-in-oil coating composition comprising a water phase emulsified in a non-aqueous liquid phase, wherein the non-aqueous phase comprises an autoxidizable binder and wherein an inorganic first salt and an organic second salt are dissolved in the water phase, wherein the inorganic first salt has a solubility in water of at least 100 grams per liter as determined at 20 °C, and a solubility in the non-aqueous phase of less than 1.0 grams per liter as determined at 20 °C, and wherein the second salt is an organic salt of an alkali or alkaline earth metal, and wherein the coating composition comprises a primary drier.
A process to produce a monolithic template containing a Si wafer with a layer of a III-V semiconductor epitaxially deposited on a surface of the Si wafer, wherein the III-V semiconductor has a lattice constant that deviates less than 10% from that of the Si, this process comprising the following steps: B) Epitaxially growing a Si layer on the surface of the Si wafer at a wafer temperature of 600-1,200°C, a growth rate of 0.01-20 μm/h, and a layer thickness of up to 5 μm; C) Subjecting a surface of the Si layer to an etching process step by means of an active Cl-containing gas, at a wafer temperature of 600-1,200°C for a duration of up to 60 minutes over the surface at an etching rate of up to 5 μm/h; D) Epitaxially growing the layer of the III-V semiconductor on the surface of the Si wafer at a wafer temperature of 350-650°C, a growth rate of 0.1-2 μm/h, and a layer thickness of 1-100 nm; E) Epitaxially growing, on the layer obtained in step D), a layer of a III-V semiconductor that is the same as or different from the III-V semiconductor deposited in step D), at a wafer temperature of 500-800°C, a growth rate of 0.1-10 μm/h, and a layer thickness of 10-150 nm. B) Epitaxially growing a Si layer on the surface of the Si wafer at a wafer temperature of 600-1,200°C, a growth rate of 0.01-20 μm/h, and a layer thickness of up to 5 μm; C) Subjecting a surface of the Si layer to an etching process step by means of an active Cl-containing gas, at a wafer temperature of 600-1,200°C for a duration of up to 60 minutes over the surface at an etching rate of up to 5 μm/h; D) Epitaxially growing the layer of the III-V semiconductor on the surface of the Si wafer at a wafer temperature of 350-650°C, a growth rate of 0.1-2 μm/h, and a layer thickness of 1-100 nm; E) Epitaxially growing, on the layer obtained in step D), a layer of a III-V semiconductor that is the same as or different from the III-V semiconductor deposited in step D), at a wafer temperature of 500-800°C, a growth rate of 0.1-10 μm/h, and a layer thickness of 10-150 nm.
A method of operating an electrowetting on dielectric (EWOD) device that includes an EWOD device array that applies electrowetting forces and contains a non-polar fluid, the method of operating comprising the steps of: dispensing a first droplet (102,122) into a first area of the EWOD device array, the first droplet containing a constituent; and forming a barrier droplet configuration positioned between the first area of the EWOD device array and a second area of the EWOD device array that obstructs a migration pathway of the constituent between the first area and the second area; wherein the barrier droplet configuration includes at least one polar or aqueous barrier droplet (110, 114, 116,118, 120, 126, 128, 130, 138, 140, 152), and the barrier droplet inhibits diffusion of the constituent by the constituent exhibiting a preference for either the polar environment of the barrier droplet or for the non-aqueous environment of the non-polar fluid; wherein the barrier droplet configuration completely surrounds the first area of the EWOD device array. dispensing a first droplet (102,122) into a first area of the EWOD device array, the first droplet containing a constituent; and forming a barrier droplet configuration positioned between the first area of the EWOD device array and a second area of the EWOD device array that obstructs a migration pathway of the constituent between the first area and the second area; wherein the barrier droplet configuration includes at least one polar or aqueous barrier droplet (110, 114, 116,118, 120, 126, 128, 130, 138, 140, 152), and the barrier droplet inhibits diffusion of the constituent by the constituent exhibiting a preference for either the polar environment of the barrier droplet or for the non-aqueous environment of the non-polar fluid; wherein the barrier droplet configuration completely surrounds the first area of the EWOD device array.
Downpipe furnace for heating particulate material, in particular for expanding expandable particulate material such as perlite, comprising - a downpipe with a drop chamber for the particulate material, - a feeding device (7, 7') for the particulate material arranged at the upper end of the downpipe, - a removal device (9, 9') for the particulate material arranged at the bottom end of the downpipe, and - a heating device surrounding the downpipe at least over a partial length, by means of which the particulate material passing through the downpipe can be heated by radiant heat, characterized by - an evacuation device (24, 24') which is connected to the drop chamber of the downpipe so that the particulate material passes through the drop chamber during the heating process under negative pressure conditions of at least one rough vacuum of less than 300 mbar, wherein the feeding device (7; 7') is provided with an arrangement of at least one pressure-tight storage container (13.1, 13.2; 36). - a downpipe with a drop chamber for the particulate material, - a feeding device (7, 7') for the particulate material arranged at the upper end of the downpipe, - a removal device (9, 9') for the particulate material arranged at the bottom end of the downpipe, and - a heating device surrounding the downpipe at least over a partial length, by means of which the particulate material passing through the downpipe can be heated by radiant heat, - an evacuation device (24, 24') which is connected to the drop chamber of the downpipe so that the particulate material passes through the drop chamber during the heating process under negative pressure conditions of at least one rough vacuum of less than 300 mbar, wherein the feeding device (7; 7') is provided with an arrangement of at least one pressure-tight storage container (13.1, 13.2; 36).
Run-flat tyre (P1, P2, P3), characterized in that it comprises: - a carcass reinforcement comprising at least one polyester reinforcing element, - a sidewall insert manufactured from a rubber composition based on a crosslinkable rubber composition comprising: - an elastomer consisting of polybutadiene having a Mooney plasticity measured according to the ASTM D-1646 standard within a range of values extending from 55 to 85 Mooney units, - a carbon black having a specific surface area determined according to ASTM D6556 standard within a range of values extending from 15 m 2 /g to 25 m 2 /g and an oil adsorption number of compressed sample (COAN) determined according to ASTM D3493 standard within a range of values extending from 65 ml/100 g to 85 ml/100 g. - a carcass reinforcement comprising at least one polyester reinforcing element, - a sidewall insert manufactured from a rubber composition based on a crosslinkable rubber composition comprising: - an elastomer consisting of polybutadiene having a Mooney plasticity measured according to the ASTM D-1646 standard within a range of values extending from 55 to 85 Mooney units, - a carbon black having a specific surface area determined according to ASTM D6556 standard within a range of values extending from 15 m 2 /g to 25 m 2 /g and an oil adsorption number of compressed sample (COAN) determined according to ASTM D3493 standard within a range of values extending from 65 ml/100 g to 85 ml/100 g.