An integrated device (100;300) being integrated on a semiconductor body having a main surface, wherein the integrated device (100,300) comprises a deep plug comprising: a deep trench extending in the semiconductor body to a deep depth (Dd) from the main surface, the deep trench having a lateral surface being coated with an insulating coating of electrically insulating material and the coated deep trench being filled with a conductive filler of electrically conductive material, a trench contact of electrical conductive material contacting the conductive filler, and a shallow trench extending in the semiconductor body from the main surface, the shallow trench having a shallow surface at a shallow depth (Ds) from the main surface lower than the deep depth (Dd) and being filled with an insulating filler of electrically insulating material, wherein the deep trench extends from the shallow surface to the deep depth (Dd) and the trench contact contacts the conductive filler through the shallow trench at the shallow surface, wherein: the shallow trench is coaxial with the deep trench, a transversal cross-section of the shallow trench is larger than a transversal cross-section of the deep trench, and a trench window across the insulating filler exposes a central portion of the conductive filler, the trench contact contacting the central portion of the conductive filler through the trench window, characterized in that a sidewall of the trench window forms an angle of 20-70° with the main surface. a deep trench extending in the semiconductor body to a deep depth (Dd) from the main surface, the deep trench having a lateral surface being coated with an insulating coating of electrically insulating material and the coated deep trench being filled with a conductive filler of electrically conductive material, a trench contact of electrical conductive material contacting the conductive filler, and a shallow trench extending in the semiconductor body from the main surface, the shallow trench having a shallow surface at a shallow depth (Ds) from the main surface lower than the deep depth (Dd) and being filled with an insulating filler of electrically insulating material, wherein the deep trench extends from the shallow surface to the deep depth (Dd) and the trench contact contacts the conductive filler through the shallow trench at the shallow surface, wherein: the shallow trench is coaxial with the deep trench, a transversal cross-section of the shallow trench is larger than a transversal cross-section of the deep trench, and a trench window across the insulating filler exposes a central portion of the conductive filler, the trench contact contacting the central portion of the conductive filler through the trench window, characterized in that a sidewall of the trench window forms an angle of 20-70° with the main surface. the shallow trench is coaxial with the deep trench, a transversal cross-section of the shallow trench is larger than a transversal cross-section of the deep trench, and a trench window across the insulating filler exposes a central portion of the conductive filler, the trench contact contacting the central portion of the conductive filler through the trench window, characterized in that a sidewall of the trench window forms an angle of 20-70° with the main surface.