A ceramic electronic component, comprising: a first dielectric layer containing as a main component at least BaO, Nd 2 O 3, and TiO 2; a second dielectric layer containing as a main component a material different from the first dielectric layer, wherein the material is selected from the group comprising forsterite (2MgO·SiO 2), enstatite (MgO·SiO 2), and diopside (CaO·MgO·2SiO 2); and an intermediate layer provided between the first dielectric layer and the second dielectric layer, wherein the intermediate layer contains main components that are identical to the main components of the first dielectric layer and the second dielectric layer, and the intermediate layer may contain Nd 2 O 3 and TiO 2 more in the boundary between the intermediate layer and the first dielectric layer than in the boundary between the intermediate layer and the second dielectric layer so that Nd 2 O 3 and TiO 2 are contained increasingly less from the first dielectric layer toward the second dielectric layer, wherein the intermediate layer contains a component that is not contained in the second dielectric layer and is contained only in the first dielectric layer in a boundary between the intermediate layer and the first dielectric layer in a higher ratio than in a boundary between the intermediate layer and the second dielectric layer, and the intermediate layer contains a component that is not contained in the first dielectric layer and is contained only in the second dielectric layer in the boundary between the intermediate layer and the second dielectric layer in the higher ratio than in the boundary between the intermediate layer and the first dielectric layer. a first dielectric layer containing as a main component at least BaO, Nd 2 O 3, and TiO 2; a second dielectric layer containing as a main component a material different from the first dielectric layer, wherein the material is selected from the group comprising forsterite (2MgO·SiO 2), enstatite (MgO·SiO 2), and diopside (CaO·MgO·2SiO 2); and an intermediate layer provided between the first dielectric layer and the second dielectric layer, wherein the intermediate layer contains main components that are identical to the main components of the first dielectric layer and the second dielectric layer, and the intermediate layer may contain Nd 2 O 3 and TiO 2 more in the boundary between the intermediate layer and the first dielectric layer than in the boundary between the intermediate layer and the second dielectric layer so that Nd 2 O 3 and TiO 2 are contained increasingly less from the first dielectric layer toward the second dielectric layer, wherein the intermediate layer contains a component that is not contained in the second dielectric layer and is contained only in the first dielectric layer in a boundary between the intermediate layer and the first dielectric layer in a higher ratio than in a boundary between the intermediate layer and the second dielectric layer, and the intermediate layer contains a component that is not contained in the first dielectric layer and is contained only in the second dielectric layer in the boundary between the intermediate layer and the second dielectric layer in the higher ratio than in the boundary between the intermediate layer and the first dielectric layer.