A reference current circuit, comprising: a current mirror circuit formed from a MOS transistor pair which is a pair of MOS transistors (111, 112) having gate terminals connected to each other, the current mirror circuit being configured to supply an output current (lout) based on an input current (lin) that is received by one of the MOS transistors from another of the MOS transistors; an output MOS transistor configured to supply a reference current (Iref) based on a voltage of the gate terminals of the MOS transistor pair; an enhancement mode MOS transistor including a drain terminal to which the output current is to be supplied from the current mirror circuit, a gate terminal connected to the drain terminal, and a source terminal that is grounded; a first depletion mode MOS transistor including a gate terminal connected to the gate terminal of the enhancement mode MOS transistor, the first depletion mode MOS transistor being configured to generate a reference voltage (Vref) based on a difference between a voltage of the source terminal of the enhancement mode MOS transistor and a voltage of a source terminal of the first depletion mode MOS transistor; a voltage dividing circuit connected to the source terminal of the first depletion mode MOS transistor, the voltage dividing circuit being configured to supply a divided voltage (Vdiv) of the reference voltage; and a second depletion mode MOS transistor configured to supply, as the input current (lin), a current based on the divided voltage to the current mirror circuit, the enhancement mode MOS transistor being the same as the first depletion mode MOS transistor in conductivity type and impurity concentration of a channel, and being different from the first depletion mode MOS transistor in Fermi level of a gate electrode, the voltage dividing circuit being configured to supply a gate terminal of the second depletion mode MOS transistor with the divided voltage (Vdiv) within a voltage range higher than a threshold voltage (Vth) of the second depletion mode MOS transistor and lower than a cross point at which gate voltage-drain current characteristics of the second depletion mode MOS transistor are independent of temperature. a current mirror circuit formed from a MOS transistor pair which is a pair of MOS transistors (111, 112) having gate terminals connected to each other, the current mirror circuit being configured to supply an output current (lout) based on an input current (lin) that is received by one of the MOS transistors from another of the MOS transistors; an output MOS transistor configured to supply a reference current (Iref) based on a voltage of the gate terminals of the MOS transistor pair; an enhancement mode MOS transistor including a drain terminal to which the output current is to be supplied from the current mirror circuit, a gate terminal connected to the drain terminal, and a source terminal that is grounded; a first depletion mode MOS transistor including a gate terminal connected to the gate terminal of the enhancement mode MOS transistor, the first depletion mode MOS transistor being configured to generate a reference voltage (Vref) based on a difference between a voltage of the source terminal of the enhancement mode MOS transistor and a voltage of a source terminal of the first depletion mode MOS transistor; a voltage dividing circuit connected to the source terminal of the first depletion mode MOS transistor, the voltage dividing circuit being configured to supply a divided voltage (Vdiv) of the reference voltage; and a second depletion mode MOS transistor configured to supply, as the input current (lin), a current based on the divided voltage to the current mirror circuit, the enhancement mode MOS transistor being the same as the first depletion mode MOS transistor in conductivity type and impurity concentration of a channel, and being different from the first depletion mode MOS transistor in Fermi level of a gate electrode, the voltage dividing circuit being configured to supply a gate terminal of the second depletion mode MOS transistor with the divided voltage (Vdiv) within a voltage range higher than a threshold voltage (Vth) of the second depletion mode MOS transistor and lower than a cross point at which gate voltage-drain current characteristics of the second depletion mode MOS transistor are independent of temperature.