A coated glass pane comprising at least the following layers in sequence: a glass substrate; a lower anti-reflection layer comprising one or more of the following layers: a dielectric base layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or an oxide of Ti; and/or an oxide of Zr; a dielectric layer based on a metal oxide, such as an oxide of Zn and Sn, an oxide of Sn, and/or an oxide of Nb; and a dielectric top layer based on an oxide of Zn, and a silver-based functional layer; and at least one further anti-reflection layer; wherein the further anti-reflection layer comprises at least the following layers in sequence: at least one barrier layer based on NiCr, Nb, Ti, Zr, Zn, Sn, In, and/or Cr and/or their oxides and/or nitrides; at least one absorbing layer based on tungsten nitride located in direct contact with the barrier layer; and at least one overlying dielectric layer located in direct contact with the absorbing layer, and wherein the at least one overlying dielectric layer comprises: a dielectric layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or a dielectric layer based on a metal oxide such as an oxide of one or more of Ti, Zr, Zn, Sn, In, and/or Nb, such as an oxide of Zn and Sn; and wherein when the overlying dielectric layer is based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof, the barrier layer that is in direct contact with the at least one absorbing layer is not based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof. a glass substrate; a lower anti-reflection layer comprising one or more of the following layers: a dielectric base layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or an oxide of Ti; and/or an oxide of Zr; a dielectric layer based on a metal oxide, such as an oxide of Zn and Sn, an oxide of Sn, and/or an oxide of Nb; and a dielectric top layer based on an oxide of Zn, and a dielectric base layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or an oxide of Ti; and/or an oxide of Zr; a dielectric layer based on a metal oxide, such as an oxide of Zn and Sn, an oxide of Sn, and/or an oxide of Nb; and a dielectric top layer based on an oxide of Zn, and a silver-based functional layer; and at least one further anti-reflection layer; wherein the further anti-reflection layer comprises at least the following layers in sequence: at least one barrier layer based on NiCr, Nb, Ti, Zr, Zn, Sn, In, and/or Cr and/or their oxides and/or nitrides; at least one absorbing layer based on tungsten nitride located in direct contact with the barrier layer; and at least one overlying dielectric layer located in direct contact with the absorbing layer, and wherein the at least one overlying dielectric layer comprises: a dielectric layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or a dielectric layer based on a metal oxide such as an oxide of one or more of Ti, Zr, Zn, Sn, In, and/or Nb, such as an oxide of Zn and Sn; and wherein when the overlying dielectric layer is based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof, the barrier layer that is in direct contact with the at least one absorbing layer is not based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof. at least one barrier layer based on NiCr, Nb, Ti, Zr, Zn, Sn, In, and/or Cr and/or their oxides and/or nitrides; at least one absorbing layer based on tungsten nitride located in direct contact with the barrier layer; and at least one overlying dielectric layer located in direct contact with the absorbing layer, and wherein the at least one overlying dielectric layer comprises: a dielectric layer based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof; and/or a dielectric layer based on a metal oxide such as an oxide of one or more of Ti, Zr, Zn, Sn, In, and/or Nb, such as an oxide of Zn and Sn; and wherein when the overlying dielectric layer is based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof, the barrier layer that is in direct contact with the at least one absorbing layer is not based on an (oxi)nitride of Si and/or an (oxi)nitride of Al and/or alloys thereof.