A semiconductor light emitting device (1; 2) having: a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination, wherein a portion of the first semiconductor layer is exposed by etching the active layer and the second semiconductor layer; and a non-conductive reflective film provided on at least the second semiconductor layer and the exposed portion of the first semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the growth substrate side; first and second electrodes provided on and contacted with the non-conductive reflective film and electrically connected with the plurality of semiconductor layers; one type of at least one finger electrode extended between the non-conductive reflective film and the first semiconductor layer, the one type of at least one finger electrode being electrically connected to the first electrode and being extended over the exposed first semiconductor layer within the exposed portion of the first semiconductor layer; another type of at least one finger electrode extended between the non-conductive reflective film and the second semiconductor layer, the another type of at least one finger electrode being electrically connected to the second electrode; one type of at least one electrical connection passing through the non-conductive reflective film from one side of the non-conductive reflective film to the other side of the non-conductive reflective film and electrically connecting the one type of at least one finger electrode to the first electrode; and another type of at least one electrical connection passing through the non-conductive reflective film from the one side of the non-conductive reflective film to the other side of the non-conductive reflective film and electrically connecting the another type of at least one finger electrode to the second electrode, characterized in that the one type of at least one finger electrode is extended under the second electrode to which it is not electrically connected and the another type of at least one finger electrode is extended under the first electrode to which it is not electrically connected, and the exposed portion of the first semiconductor layer is enclosed and blocked by the active layer and the second semiconductor layer without being open to any one of the lateral directions of the device. a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination, wherein a portion of the first semiconductor layer is exposed by etching the active layer and the second semiconductor layer; and a non-conductive reflective film provided on at least the second semiconductor layer and the exposed portion of the first semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the growth substrate side; first and second electrodes provided on and contacted with the non-conductive reflective film and electrically connected with the plurality of semiconductor layers; one type of at least one finger electrode extended between the non-conductive reflective film and the first semiconductor layer, the one type of at least one finger electrode being electrically connected to the first electrode and being extended over the exposed first semiconductor layer within the exposed portion of the first semiconductor layer; another type of at least one finger electrode extended between the non-conductive reflective film and the second semiconductor layer, the another type of at least one finger electrode being electrically connected to the second electrode; one type of at least one electrical connection passing through the non-conductive reflective film from one side of the non-conductive reflective film to the other side of the non-conductive reflective film and electrically connecting the one type of at least one finger electrode to the first electrode; and another type of at least one electrical connection passing through the non-conductive reflective film from the one side of the non-conductive reflective film to the other side of the non-conductive reflective film and electrically connecting the another type of at least one finger electrode to the second electrode, the one type of at least one finger electrode is extended under the second electrode to which it is not electrically connected and the another type of at least one finger electrode is extended under the first electrode to which it is not electrically connected, and the exposed portion of the first semiconductor layer is enclosed and blocked by the active layer and the second semiconductor layer without being open to any one of the lateral directions of the device.