A semiconductor structure obtained by the method of claim 3, comprising: a monocrystalline silicon substrate; a nested grouping of monocrystalline silicon fins (111 N), and a monocrystalline silicon isolated fin (111 I), the nested groping of fins and the isolated fin extending from the monocrystalline silicon substrate, and a shallow trench isolation layer being deposited on the substrate and between all the fins; the nested grouping of monocrystalline silicon fins comprising: a first monocrystalline silicon fin having a top and laterally opposite sidewalls and having a shape, a width, a height, and a height to width aspect ratio, wherein the width is less than 15 nanometers, the height is greater than 100 nanometers, and wherein the height to width aspect ratio is greater 10:1; a second monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; and a third monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; wherein the third monocrystalline silicon fin is laterally directly adjacent the second monocrystalline silicon fin at the first pitch P N, and wherein the second monocrystalline silicon fin is laterally directly adjacent the first monocrystalline silicon fin at the pitch P N; and the isolated monocrystalline silicon fin having the shape, the width, the height and the height to width aspect ratio, and the isolated monocrystalline silicon fin laterally directly adjacent the first monocrystalline silicon fin at a second pitch P I greater than 1.5 times the first pitch P N. a monocrystalline silicon substrate; a nested grouping of monocrystalline silicon fins (111 N), and a monocrystalline silicon isolated fin (111 I), the nested groping of fins and the isolated fin extending from the monocrystalline silicon substrate, and a shallow trench isolation layer being deposited on the substrate and between all the fins; the nested grouping of monocrystalline silicon fins comprising: a first monocrystalline silicon fin having a top and laterally opposite sidewalls and having a shape, a width, a height, and a height to width aspect ratio, wherein the width is less than 15 nanometers, the height is greater than 100 nanometers, and wherein the height to width aspect ratio is greater 10:1; a second monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; and a third monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; wherein the third monocrystalline silicon fin is laterally directly adjacent the second monocrystalline silicon fin at the first pitch P N, and wherein the second monocrystalline silicon fin is laterally directly adjacent the first monocrystalline silicon fin at the pitch P N; and the isolated monocrystalline silicon fin having the shape, the width, the height and the height to width aspect ratio, and the isolated monocrystalline silicon fin laterally directly adjacent the first monocrystalline silicon fin at a second pitch P I greater than 1.5 times the first pitch P N. a first monocrystalline silicon fin having a top and laterally opposite sidewalls and having a shape, a width, a height, and a height to width aspect ratio, wherein the width is less than 15 nanometers, the height is greater than 100 nanometers, and wherein the height to width aspect ratio is greater 10:1; a second monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; and a third monocrystalline silicon fin having a top and laterally opposite sidewalls and having the shape, the width, the height and the height to width aspect ratio; wherein the third monocrystalline silicon fin is laterally directly adjacent the second monocrystalline silicon fin at the first pitch P N, and wherein the second monocrystalline silicon fin is laterally directly adjacent the first monocrystalline silicon fin at the pitch P N; and the isolated monocrystalline silicon fin having the shape, the width, the height and the height to width aspect ratio, and the isolated monocrystalline silicon fin laterally directly adjacent the first monocrystalline silicon fin at a second pitch P I greater than 1.5 times the first pitch P N.