A method of fabricating a thin film transistor, comprising: crystallizing a poly-Si layer on a substrate, using a crystallization-inducing metal; forming a semiconductor layer including a source region, a drain region, and two channel regions (321, 322), by patterning the poly-Si layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming an interlayer insulating layer on the gate electrode and the gate insulating layer; patterning the interlayer insulating layer and the gate insulating layer, to form first holes and a second hole, which expose regions of the semiconductor layer; forming first gettering sites in the exposed regions of the semiconductor layer using the first holes and forming a second gettering site in the exposed regions of the semiconductor layer using the second hole; gettering the crystallization-inducing metal from the channel regions of the semiconductor layer, using the first gettering sites and the second gettering site; and forming source and drain electrodes (381, 382) that are electrically connected to the source and drain regions (323, 324) of the semiconductor layer, through the first holes, characterized in that forming the semiconductor layer consists of forming two body units (320a, 320c) to extend substantially parallel to each other and intersect the gate electrode, a first one of the body units (320a, 320c) comprising the source region and a first one of the two channel regions and a second one of the body units (320a, 320c) comprising the drain region and a second one of the two channel regions, and forming a connection unit to connect adjacent first edges of the body units (320a, 320c), the connected first edges being separated by the channel regions (321, 322) from the source region and the drain region; and forming the first gettering sites on second edges of the body units (320a, 320c), which are not connected by the connection unit, and forming the second gettering site between the channel regions (321, 322), in a region closer to the drain region than to the source region. crystallizing a poly-Si layer on a substrate, using a crystallization-inducing metal; forming a semiconductor layer including a source region, a drain region, and two channel regions (321, 322), by patterning the poly-Si layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming an interlayer insulating layer on the gate electrode and the gate insulating layer; patterning the interlayer insulating layer and the gate insulating layer, to form first holes and a second hole, which expose regions of the semiconductor layer; forming first gettering sites in the exposed regions of the semiconductor layer using the first holes and forming a second gettering site in the exposed regions of the semiconductor layer using the second hole; gettering the crystallization-inducing metal from the channel regions of the semiconductor layer, using the first gettering sites and the second gettering site; and forming source and drain electrodes (381, 382) that are electrically connected to the source and drain regions (323, 324) of the semiconductor layer, through the first holes, characterized in that forming the semiconductor layer consists of forming two body units (320a, 320c) to extend substantially parallel to each other and intersect the gate electrode, a first one of the body units (320a, 320c) comprising the source region and a first one of the two channel regions and a second one of the body units (320a, 320c) comprising the drain region and a second one of the two channel regions, and forming a connection unit to connect adjacent first edges of the body units (320a, 320c), the connected first edges being separated by the channel regions (321, 322) from the source region and the drain region; and forming the first gettering sites on second edges of the body units (320a, 320c), which are not connected by the connection unit, and forming the second gettering site between the channel regions (321, 322), in a region closer to the drain region than to the source region.