A semiconductor package structure (40, 50, 60), comprising: a redistribution layer structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises: an inter-metal dielectric layer; a first conductive layer disposed at a first layer-level of the IMD layer, wherein the first conductive layer has an antenna pattern; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer, wherein the second conductive layer has a ground shielding pattern; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure, wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer; a molding compound covering the first surface of the RDL structure; a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure; and a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure. a redistribution layer structure having a first surface and a second surface opposite thereto, wherein the RDL structure comprises: an inter-metal dielectric layer; a first conductive layer disposed at a first layer-level of the IMD layer, wherein the first conductive layer has an antenna pattern; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer, wherein the second conductive layer has a ground shielding pattern; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure, wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer; an inter-metal dielectric layer; a first conductive layer disposed at a first layer-level of the IMD layer, wherein the first conductive layer has an antenna pattern; a second conductive layer disposed at a second layer-level below the first layer-level of the IMD layer, wherein the second conductive layer has a ground shielding pattern; and a third conductive layer disposed at a third layer-level below the second layer-level of the IMD layer; wherein the IMD layer comprises a first sub-dielectric layer and a second sub-dielectric layer that are successively stacked from the first surface of the RDL structure towards the second surface of the RDL structure, wherein the first conductive layer is positioned between the first sub-dielectric layer and the second sub-dielectric layer; a molding compound covering the first surface of the RDL structure; a first semiconductor die disposed over the second surface of the RDL structure and electrically coupled to the RDL structure; and a plurality of bump structures disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.