A method for making a microelectronic device comprising at least a transistor and at least an electromechanical component or electronic component provided with a suspended structure, the method comprising the steps of: a) forming on a supporting layer, at least one element bound to at least one anchoring block (102b, 102d) in at least one thin layer positioned on the supporting layer, said element being intended to form said suspended structure of the electromechanical or electronic component, b) withdrawing a portion of the supporting layer at least under said element, so as to release the suspended structure, c) forming a passivation layer around said element, d) forming an encapsulation layer covering said passivation layer and said element, the encapsulation layer being based on a material capable of being selectively etched with regard to the material of the passivation layer, the passivation layer and encapsulation layer being formed so as to cover the thin layer, and the method further comprising after step d), steps for: - withdrawing portions of the encapsulation layer, so as to reveal a given area of said thin layer, - forming a protective layer of the encapsulation layer, said protective layer being based on a material provided to stop the etching of the encapsulation, said protective layer covering said given area of said thin layer, - partially withdrawing the protection layer and the passivation layer so as to reveal at least said given area of said thin layer, - forming at least one transistor from said given area, - making contact (141, 142, 143) and/or interconnection conducting areas (M 1,...M k), and then - suppressing the encapsulation layer around said element selectively with regard to the passivation layer, again releasing said suspended structure. a) forming on a supporting layer, at least one element bound to at least one anchoring block (102b, 102d) in at least one thin layer positioned on the supporting layer, said element being intended to form said suspended structure of the electromechanical or electronic component, b) withdrawing a portion of the supporting layer at least under said element, so as to release the suspended structure, c) forming a passivation layer around said element, d) forming an encapsulation layer covering said passivation layer and said element, the encapsulation layer being based on a material capable of being selectively etched with regard to the material of the passivation layer, - withdrawing portions of the encapsulation layer, so as to reveal a given area of said thin layer, - forming a protective layer of the encapsulation layer, said protective layer being based on a material provided to stop the etching of the encapsulation, said protective layer covering said given area of said thin layer, - partially withdrawing the protection layer and the passivation layer so as to reveal at least said given area of said thin layer, - forming at least one transistor from said given area, - making contact (141, 142, 143) and/or interconnection conducting areas (M 1,...M k), and then - suppressing the encapsulation layer around said element selectively with regard to the passivation layer, again releasing said suspended structure.