Protective circuit for protection against electrostatic discharges for terminal pins (2, 3) of an application-specific integrated circuit, wherein the protective circuit comprises: - a first terminal pin; and - a second terminal pin, wherein the first terminal pin and the second terminal pin are interconnected with one another in a Y-configuration, wherein the protective circuit comprises a shared electronic protective structure for protection against positive stress for the first terminal pin and for the second terminal pin, wherein the protective circuit comprises a plurality of electronic protective structures for protection against polarity reversal of the first terminal pin and of the second terminal pin, wherein the electronic protective structures for protection against polarity reversal and the electronic protective structure for protection against positive stress are interconnected with one another in a Y-configuration, characterized in that the protective circuit comprises a first N-type silicon controlled rectifier and a second N-type silicon controlled rectifier as electronic protective structures for protection against polarity reversal, wherein the first N-type silicon controlled rectifier is connected upstream of the first terminal pin and the second N-type silicon controlled rectifier is connected upstream of the second terminal pin, the protective circuit comprises a P-type silicon controlled rectifier as shared electronic protective structure for protection against positive stress, which is connected upstream of both the first terminal pin and the second terminal pin, and the P-type silicon controlled rectifier is connected upstream of the first N-type silicon controlled rectifier and the second N-type silicon controlled rectifier, wherein the first terminal pin is electrically connected to an anode of the first N-type silicon controlled rectifier and the second terminal pin is electrically connected to an anode of the second N-type silicon controlled rectifier, wherein a cathode of the first N-type silicon controlled rectifier is electrically connected to a cathode of the second N-type silicon controlled rectifier, and wherein a cathode of the P-type silicon controlled rectifier is electrically connected both to the cathode of the first N-type silicon controlled rectifier and to the cathode of the second N-type silicon controlled rectifier. - a first terminal pin; and - a second terminal pin, wherein the first terminal pin and the second terminal pin are interconnected with one another in a Y-configuration, wherein the protective circuit comprises a shared electronic protective structure for protection against positive stress for the first terminal pin and for the second terminal pin, wherein the protective circuit comprises a plurality of electronic protective structures for protection against polarity reversal of the first terminal pin and of the second terminal pin, wherein the electronic protective structures for protection against polarity reversal and the electronic protective structure for protection against positive stress are interconnected with one another in a Y-configuration, characterized in that the protective circuit comprises a first N-type silicon controlled rectifier and a second N-type silicon controlled rectifier as electronic protective structures for protection against polarity reversal, wherein the first N-type silicon controlled rectifier is connected upstream of the first terminal pin and the second N-type silicon controlled rectifier is connected upstream of the second terminal pin, the protective circuit comprises a P-type silicon controlled rectifier as shared electronic protective structure for protection against positive stress, which is connected upstream of both the first terminal pin and the second terminal pin, and the P-type silicon controlled rectifier is connected upstream of the first N-type silicon controlled rectifier and the second N-type silicon controlled rectifier, wherein the first terminal pin is electrically connected to an anode of the first N-type silicon controlled rectifier and the second terminal pin is electrically connected to an anode of the second N-type silicon controlled rectifier, wherein a cathode of the first N-type silicon controlled rectifier is electrically connected to a cathode of the second N-type silicon controlled rectifier, and wherein a cathode of the P-type silicon controlled rectifier is electrically connected both to the cathode of the first N-type silicon controlled rectifier and to the cathode of the second N-type silicon controlled rectifier.