A method of forming a semiconductor structure comprising: forming a hard mask on a dielectric player; forming a first patterned photoresist layer on the hard mask, the forming the first patterned photoresist layer including projecting a first imaging light onto a photoresist layer, the first imaging light having a strong dipole component in the first direction; etching the hard mask exposed by the first patterned photoresist layer to form a first elongated opening and a second elongated opening, the first elongated opening having a bottom surface that lies above and spaced apart from a top surface of the dielectric layer, and a longitudinal axis that lies in the first direction, the second elongated opening having a bottom surface that lies above and spaced apart from the top surface of the dielectric layer, and a longitudinal axis that lies in a second direction, the second direction being substantially orthogonal to the first direction; removing the first patterned photoresist layer; forming a second patterned photoresist layer on the hard mask after the first patterned photoresist layer has been removed, the forming the second patterned photoresist layer including projecting a second imaging light onto a photoresist layer, the second imaging light having a strong dipole component in the second direction; etching the hard mask exposed by the second patterned photoresist layer to form a third elongated opening and a fourth elongated opening, the third elongated opening exposing a first region on the top surface of the dielectric layer, and having a longitudinal axis that lies in the first direction, the fourth elongated opening exposing a second region on the top surface of the dielectric layer, and having a longitudinal axis that lies in the second direction; and etching the first region and the second region on the top surface of the dielectric layer to form a first elongated metal contact opening and a second elongated metal contact opening, the first elongated metal contact opening having a longitudinal axis that lies in the first direction, and exposing a first elongated source region that has a longitudinal axis lying in the first direction, the second elongated metal contact opening having a longitudinal axis that lies in the second direction, and exposing a second elongated source region that has a longitudinal axis lying in the second direction. forming a hard mask on a dielectric player; forming a first patterned photoresist layer on the hard mask, the forming the first patterned photoresist layer including projecting a first imaging light onto a photoresist layer, the first imaging light having a strong dipole component in the first direction; etching the hard mask exposed by the first patterned photoresist layer to form a first elongated opening and a second elongated opening, the first elongated opening having a bottom surface that lies above and spaced apart from a top surface of the dielectric layer, and a longitudinal axis that lies in the first direction, the second elongated opening having a bottom surface that lies above and spaced apart from the top surface of the dielectric layer, and a longitudinal axis that lies in a second direction, the second direction being substantially orthogonal to the first direction; removing the first patterned photoresist layer; forming a second patterned photoresist layer on the hard mask after the first patterned photoresist layer has been removed, the forming the second patterned photoresist layer including projecting a second imaging light onto a photoresist layer, the second imaging light having a strong dipole component in the second direction; etching the hard mask exposed by the second patterned photoresist layer to form a third elongated opening and a fourth elongated opening, the third elongated opening exposing a first region on the top surface of the dielectric layer, and having a longitudinal axis that lies in the first direction, the fourth elongated opening exposing a second region on the top surface of the dielectric layer, and having a longitudinal axis that lies in the second direction; and etching the first region and the second region on the top surface of the dielectric layer to form a first elongated metal contact opening and a second elongated metal contact opening, the first elongated metal contact opening having a longitudinal axis that lies in the first direction, and exposing a first elongated source region that has a longitudinal axis lying in the first direction, the second elongated metal contact opening having a longitudinal axis that lies in the second direction, and exposing a second elongated source region that has a longitudinal axis lying in the second direction. the first elongated metal contact opening having a longitudinal axis that lies in the first direction, and exposing a first elongated source region that has a longitudinal axis lying in the first direction, the second elongated metal contact opening having a longitudinal axis that lies in the second direction, and exposing a second elongated source region that has a longitudinal axis lying in the second direction.