A light emitting device comprising: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer and an active layer between the first and second conductivity type semiconductor layers (115,119); a plurality of first electrodes under the first conductivity type semiconductor layer; a reflective electrode layer (130,131) under the second conductivity type semiconductor layer; a plurality of second electrodes under the reflective electrode layer (130,131); a first connection electrode under the plurality of first electrodes; a second connection electrode under the plurality of second electrodes; and a support member disposed under the light emitting structure; wherein the light emitting structure includes a plurality of cells, wherein the support member is disposed around the first and second connection electrodes (141,143) and around the first and second electrodes (135,137) and disposed under the plurality of cells, wherein a height of the first connection electrode under the first electrode is greater than a height of the second connection electrode under the second electrode, wherein the support member is contacted with outer peripheral surfaces of the first and second electrodes (135, 137) and the first and second connection electrodes (141, 143), wherein the support member has a first region having a thickness thicker than the height of the second connection electrode and a second region having a thickness thicker than the height of the first connection electrode, characterized by further comprising: a plurality of protrusions (11,11B, 13) disposed on the light emitting structure and a plurality of concaves (12,14) disposed in the protrusions (11,11B, 13); a transmissive resin layer disposed among the plurality of protrusions; and a phosphor layer (161,161A,162,165) disposed on the concaves formed in the protrusions (11,11B,13) and on the transmissive resin layer, wherein the transmissive resin layer is contacted with the protrusions (11,11B, 13) and the concaves (12,14), wherein the concaves (12,14) have a size smaller than a size of the protrusions (11,13), and wherein the support member is formed of an insulating material having a ceramic-based thermal diffusion agent. a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer and an active layer between the first and second conductivity type semiconductor layers (115,119); a plurality of first electrodes under the first conductivity type semiconductor layer; a reflective electrode layer (130,131) under the second conductivity type semiconductor layer; a plurality of second electrodes under the reflective electrode layer (130,131); a first connection electrode under the plurality of first electrodes; a second connection electrode under the plurality of second electrodes; and a support member disposed under the light emitting structure; wherein the light emitting structure includes a plurality of cells, wherein the support member is disposed around the first and second connection electrodes (141,143) and around the first and second electrodes (135,137) and disposed under the plurality of cells, wherein a height of the first connection electrode under the first electrode is greater than a height of the second connection electrode under the second electrode, wherein the support member is contacted with outer peripheral surfaces of the first and second electrodes (135, 137) and the first and second connection electrodes (141, 143), wherein the support member has a first region having a thickness thicker than the height of the second connection electrode and a second region having a thickness thicker than the height of the first connection electrode, characterized by further comprising: a plurality of protrusions (11,11B, 13) disposed on the light emitting structure and a plurality of concaves (12,14) disposed in the protrusions (11,11B, 13); a transmissive resin layer disposed among the plurality of protrusions; and a phosphor layer (161,161A,162,165) disposed on the concaves formed in the protrusions (11,11B,13) and on the transmissive resin layer, a plurality of protrusions (11,11B, 13) disposed on the light emitting structure and a plurality of concaves (12,14) disposed in the protrusions (11,11B, 13); a transmissive resin layer disposed among the plurality of protrusions; and a phosphor layer (161,161A,162,165) disposed on the concaves formed in the protrusions (11,11B,13) and on the transmissive resin layer, wherein the transmissive resin layer is contacted with the protrusions (11,11B, 13) and the concaves (12,14), wherein the concaves (12,14) have a size smaller than a size of the protrusions (11,13), and wherein the support member is formed of an insulating material having a ceramic-based thermal diffusion agent.