An electric power conversion device comprising: a power supply voltage source; a first parasitic inductance; a first diode; a second parasitic inductance directly connected to the first diode in series; a second diode directly connected to the first diode; a third parasitic inductance directly connected to the second diode in series; a switching element having a gate control electrode; a gate circuit connected to the gate control electrode; and a load directly connected to the first diode and second parasitic inductance in parallel, and to the second diode and third parasitic inductance in parallel, wherein the device includes a first circuit loop and second circuit loop, the first circuit loop includes the power supply voltage source, the first parasitic inductance connected in series with the power supply voltage source, the first diode and the second parasitic inductance connected in series with the first parasitic inductance, the switching element connected in series to the first diode and to the power supply voltage source, and the gate circuit, the second circuit loop includes the power supply voltage source, the first parasitic inductance connected in series with the power supply voltage source, the second diode and the third parasitic inductance connected in series with the first parasitic inductance, the switching element connected in series to the second diode and to the power supply voltage source, and the gate circuit, an anode of the second diode is directly connected to an anode of the first diode, a cathode of the second diode is directly connected to one end of the third parasitic inductance, the other end of the third parasitic inductance is directly connected to a first connection point of the first parasitic inductance and the second parasitic inductance, where an LC resonance frequency based on the first parasitic inductance and the second parasitic inductance of the first circuit loop and a junction capacitance of the first diode is denoted as f1, and an LC resonance frequency based on the first parasitic inductance and the third parasitic inductance of the second circuit loop and a junction capacitance of the second diode is denoted as f2, the LC resonance frequency f1 and the LC resonance frequency f2 are different frequencies, and both of the first diode and the second diode are Schottky barrier diodes, wherein the junction capacitance of the first diode and the junction capacitance of the second diode are different values. a power supply voltage source; a first parasitic inductance; a first diode; a second parasitic inductance directly connected to the first diode in series; a second diode directly connected to the first diode; a third parasitic inductance directly connected to the second diode in series; a switching element having a gate control electrode; a gate circuit connected to the gate control electrode; and a load directly connected to the first diode and second parasitic inductance in parallel, and to the second diode and third parasitic inductance in parallel, wherein the device includes a first circuit loop and second circuit loop, the first circuit loop includes the power supply voltage source, the first parasitic inductance connected in series with the power supply voltage source, the first diode and the second parasitic inductance connected in series with the first parasitic inductance, the switching element connected in series to the first diode and to the power supply voltage source, and the gate circuit, the second circuit loop includes the power supply voltage source, the first parasitic inductance connected in series with the power supply voltage source, the second diode and the third parasitic inductance connected in series with the first parasitic inductance, the switching element connected in series to the second diode and to the power supply voltage source, and the gate circuit, an anode of the second diode is directly connected to an anode of the first diode, a cathode of the second diode is directly connected to one end of the third parasitic inductance, the other end of the third parasitic inductance is directly connected to a first connection point of the first parasitic inductance and the second parasitic inductance, where an LC resonance frequency based on the first parasitic inductance and the second parasitic inductance of the first circuit loop and a junction capacitance of the first diode is denoted as f1, and an LC resonance frequency based on the first parasitic inductance and the third parasitic inductance of the second circuit loop and a junction capacitance of the second diode is denoted as f2, the LC resonance frequency f1 and the LC resonance frequency f2 are different frequencies, and both of the first diode and the second diode are Schottky barrier diodes, wherein the junction capacitance of the first diode and the junction capacitance of the second diode are different values.