A CMOS image sensor, comprising: a first sensor layer having a first array of pixels, each pixel including a first silicon portion having a photodetector for collecting charge in response to incident light and a first floating diffusion, each pixel further having a transfer gate for selectively transferring charge from the photodetector to the first floating diffusion, the first sensor layer having a thickness to collect light with a first preselected range of wavelengths, wherein the first sensor layer further includes one or more metal layers connected to the transfer gates on the first silicon portion; a second sensor layer situated over the first sensor layer, the second sensor layer having a second array of pixels, each pixel including a second silicon portion having a photodetector for collecting charge in response to incident light and a second floating diffusion, each pixel further having a transfer gate for selectively transferring charge from the photodetector to the second floating diffusion, the second sensor layer having a thickness to collect light with a second preselected range of wavelengths, wherein the second sensor layer further includes one or more metal layers connected to the transfer gates on the second silicon portion; the first pixel array being organized into first pixel kernels, wherein a plurality of pixels share a first common floating diffusion formed of a plurality of first floating diffusions; and the second pixel array being organized into second pixel kernels, wherein a plurality of pixels share a second common floating diffusion formed of a plurality of second floating diffusions; a circuit layer situated below the first sensor layer, the circuit layer having support circuitry for the pixels of the first and second sensor layers; and interlayer connectors electrically connecting two respective first and second common floating diffusions of the first and second sensor layers to a common floating diffusion of the support circuitry. a first sensor layer having a first array of pixels, each pixel including a first silicon portion having a photodetector for collecting charge in response to incident light and a first floating diffusion, each pixel further having a transfer gate for selectively transferring charge from the photodetector to the first floating diffusion, the first sensor layer having a thickness to collect light with a first preselected range of wavelengths, wherein the first sensor layer further includes one or more metal layers connected to the transfer gates on the first silicon portion; a second sensor layer situated over the first sensor layer, the second sensor layer having a second array of pixels, each pixel including a second silicon portion having a photodetector for collecting charge in response to incident light and a second floating diffusion, each pixel further having a transfer gate for selectively transferring charge from the photodetector to the second floating diffusion, the second sensor layer having a thickness to collect light with a second preselected range of wavelengths, wherein the second sensor layer further includes one or more metal layers connected to the transfer gates on the second silicon portion; the first pixel array being organized into first pixel kernels, wherein a plurality of pixels share a first common floating diffusion formed of a plurality of first floating diffusions; and the second pixel array being organized into second pixel kernels, wherein a plurality of pixels share a second common floating diffusion formed of a plurality of second floating diffusions; a circuit layer situated below the first sensor layer, the circuit layer having support circuitry for the pixels of the first and second sensor layers; and interlayer connectors electrically connecting two respective first and second common floating diffusions of the first and second sensor layers to a common floating diffusion of the support circuitry.