A T/R switching circuitry (40; 48) for a MR RF antenna for use in an MR imaging system, the T/R switching circuitry (40; 48) comprising: - an RF input transmission line provided for transmitting RF power to the MR RF antenna; - an RF output transmission line provided for transferring MR signals away from the MR RF antenna, wherein the MR signals are to be received by the MR RF antenna at an MR frequency; - at least two RF solid state switching members (D1, D2, D3), wherein the RF input transmission line is connected to the MR RF antenna via a first one of the at least two RF solid state switching members (D1, D2, D3); - a bias current generating circuit provided for generating DC bias current for the at least two RF solid state switching members (D1, D2, D3); wherein an RF impedance of the at least two RF solid state switching members (D1, D2, D3) is controllable between a substantially electrically non-conducting state and a substantially electrically conducting state by variation of the bias current; - at least a first inductor and at least a first capacitor that are connected via the first one of the at least two RF solid state switching members (D1, D2, D3); wherein the first one of the at least two RF solid state switching members (D1, D2, D3) and one out of the first inductor and the first capacitor are connected in series between the RF input transmission line and the RF output transmission line; and wherein the first inductor and the first capacitor form a parallel resonant circuit with a resonance frequency that is substantially equal to the MR frequency, and that is connected in parallel to the MR RF antenna with regard to the RF input transmission line, when the at least two RF solid state switching members (D1, D2, D3) are in the substantially electrically conducting state; - at least a second inductor that is connected in series between the one out of the first inductor and the first capacitor and the RF output transmission line, if the first capacitor is connected in series between the RF input transmission line and the RF output transmission line, or - at least a second capacitor that is connected in series between the one out of the first inductor and the first capacitor and the RF output transmission line, if the first inductor is connected in series between the RF input transmission line and the RF output transmission line, wherein the second inductor and the first capacitor or the second capacitor and the first inductor form a series resonant circuit with a resonance frequency that is substantially equal to the MR frequency, and that is connected in series between the first one of the at least two RF solid state switching members (D1, D2, D3) and the RF output transmission line; and wherein the second one of the at least two RF solid state switching members is connected to the common node of the inductor and the capacitor of the series resonant circuit. - an RF input transmission line provided for transmitting RF power to the MR RF antenna; - an RF output transmission line provided for transferring MR signals away from the MR RF antenna, wherein the MR signals are to be received by the MR RF antenna at an MR frequency; - at least two RF solid state switching members (D1, D2, D3), wherein the RF input transmission line is connected to the MR RF antenna via a first one of the at least two RF solid state switching members (D1, D2, D3); - a bias current generating circuit provided for generating DC bias current for the at least two RF solid state switching members (D1, D2, D3); wherein an RF impedance of the at least two RF solid state switching members (D1, D2, D3) is controllable between a substantially electrically non-conducting state and a substantially electrically conducting state by variation of the bias current; - at least a first inductor and at least a first capacitor that are connected via the first one of the at least two RF solid state switching members (D1, D2, D3); wherein the first one of the at least two RF solid state switching members (D1, D2, D3) and one out of the first inductor and the first capacitor are connected in series between the RF input transmission line and the RF output transmission line; and wherein the first inductor and the first capacitor form a parallel resonant circuit with a resonance frequency that is substantially equal to the MR frequency, and that is connected in parallel to the MR RF antenna with regard to the RF input transmission line, when the at least two RF solid state switching members (D1, D2, D3) are in the substantially electrically conducting state; - at least a second inductor that is connected in series between the one out of the first inductor and the first capacitor and the RF output transmission line, if the first capacitor is connected in series between the RF input transmission line and the RF output transmission line, or - at least a second capacitor that is connected in series between the one out of the first inductor and the first capacitor and the RF output transmission line, if the first inductor is connected in series between the RF input transmission line and the RF output transmission line, wherein the second inductor and the first capacitor or the second capacitor and the first inductor form a series resonant circuit with a resonance frequency that is substantially equal to the MR frequency, and that is connected in series between the first one of the at least two RF solid state switching members (D1, D2, D3) and the RF output transmission line; and wherein the second one of the at least two RF solid state switching members is connected to the common node of the inductor and the capacitor of the series resonant circuit.