A method for manufacturing a micro-electromechanical device in a material substrate suitable for manufacturing integrated electronic components, in particular a semiconductor substrate, wherein, in the method: - a material substrate (12, 14, 16) is provided, on which at least one surface structure is formed during manufacture of the device, - at least one electronic component, comprising a plurality of component elements, is formed in the material substrate (12, 14, 16) using process steps of a conventional method for manufacturing integrated electronic components, - a component element, selectively defining the position of the electronic component on the material substrate (12, 14, 16), is formed by a first etching stop material acting as an etching stop for etching the material substrate (12, 14, 16) or a material layer disposed on the material substrate (12, 14, 16), wherein, in a self-adjusting CMOS process, this component element serves for manufacturing further component elements (34, 36) of the electronic component, - from this etching stop material, together with the formation of the component element of the electronic component on the material substrate (12, 14, 16), a bounding region, additionally comprising a partial section, is formed along at least a partial section of an edge of the surface structure and comprises a distance, defined in the manufacturing process of the first etching stop material, to the component element of the electronic component comprising the first etching stop material, and - the material substrate (12, 14, 16) thus formed is selectively etched for forming the surface structure, in that an edge the bounding region defines, on the material substrate (12, 14, 16), the position of the surface structure to be formed and thus the surface structure and the electronic component are arranged spaced apart from each other at a distance corresponding to the distance between the component element comprising the first etching stop material and the bounding region comprising the first etching stop material. - a material substrate (12, 14, 16) is provided, on which at least one surface structure is formed during manufacture of the device, - at least one electronic component, comprising a plurality of component elements, is formed in the material substrate (12, 14, 16) using process steps of a conventional method for manufacturing integrated electronic components, - a component element, selectively defining the position of the electronic component on the material substrate (12, 14, 16), is formed by a first etching stop material acting as an etching stop for etching the material substrate (12, 14, 16) or a material layer disposed on the material substrate (12, 14, 16), wherein, in a self-adjusting CMOS process, this component element serves for manufacturing further component elements (34, 36) of the electronic component, - from this etching stop material, together with the formation of the component element of the electronic component on the material substrate (12, 14, 16), a bounding region, additionally comprising a partial section, is formed along at least a partial section of an edge of the surface structure and comprises a distance, defined in the manufacturing process of the first etching stop material, to the component element of the electronic component comprising the first etching stop material, and - the material substrate (12, 14, 16) thus formed is selectively etched for forming the surface structure, in that an edge the bounding region defines, on the material substrate (12, 14, 16), the position of the surface structure to be formed and thus the surface structure and the electronic component are arranged spaced apart from each other at a distance corresponding to the distance between the component element comprising the first etching stop material and the bounding region comprising the first etching stop material.