An aqueous cleaning composition for post copper chemical-mechanical planarization (post-Cu CMP), comprising: an organic base, wherein the organic base is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tris(2-hydroxyethyl) methylammonium hydroxide (THEMAH), cetyltrimethylammonium hydroxide (CTAH), choline, and combinations thereof, and in a concentration of 400 ppm to 12,000 ppm, a copper etchant, wherein the copper etchant is an N-containing compound, which is selected from the group consisting of piperazine, 1-(2-aminoethyl)piperazine, 1-(2-hydroxyethyl)piperazine, 2-(1-piperazinyl)ethanol, 2-(1-piperazinyl)ethylamine, 2-(2-aminoethoxy)ethanol, 2-(2-aminoethylamino)ethanol, 2-amino-1-butanol, 2-amino-1-propanol, 2-aminoethanol, 2-dimethylaminoethanol, 2-(N-methylamino)ethanol, 3-amino-1-propanol, ethanolamine, diethanolamine, triethanolamine, diethylenetriamine, diisopropanolamine, isopropanolamine, N-methyldiethanolamine, N-methylethanolamine, diglycolamine, bicine, tricine, tris(hydroxymethyl)aminomethane (Tris), and combinations thereof, and in a concentration of 300 ppm to 10,000 ppm, an organic ligand, wherein the organic ligand is a phosphonic acid, wherein the phosphonic acid is selected from the group consisting of diethylenetriamine penta(methylene phosphonic acid) (DTPMP), 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), hexamethylenediamine tetra(methylene phosphonic acid) (HDTMP), 2-hydroxy phosphonoacetic acid (HPAA), 2-carboxyethyl phosphonic acid (CEPA), phosphino carboxylic acid polymer, polyamino polyether methylene phosphonic acid (PAPEMP), 2-aminoethylphosphonic acid (AEPn), N-(phosphonomethyl)iminodiacetic acid (PMIDA), amino tris(methylene phosphonic acid) (ATMP), and combinations thereof, a corrosion inhibitor, which is a hydrazide compound, and wherein the hydrazide compound is carbohydrazide; and water, wherein the organic ligand is in a concentration of 50 ppm to 10,000ppm, and the corrosion inhibitor is in a concentration of 10 ppm to 5,000 ppm, and wherein the pH value of the cleaning composition is above 9. an organic base, wherein the organic base is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tris(2-hydroxyethyl) methylammonium hydroxide (THEMAH), cetyltrimethylammonium hydroxide (CTAH), choline, and combinations thereof, and in a concentration of 400 ppm to 12,000 ppm, a copper etchant, wherein the copper etchant is an N-containing compound, which is selected from the group consisting of piperazine, 1-(2-aminoethyl)piperazine, 1-(2-hydroxyethyl)piperazine, 2-(1-piperazinyl)ethanol, 2-(1-piperazinyl)ethylamine, 2-(2-aminoethoxy)ethanol, 2-(2-aminoethylamino)ethanol, 2-amino-1-butanol, 2-amino-1-propanol, 2-aminoethanol, 2-dimethylaminoethanol, 2-(N-methylamino)ethanol, 3-amino-1-propanol, ethanolamine, diethanolamine, triethanolamine, diethylenetriamine, diisopropanolamine, isopropanolamine, N-methyldiethanolamine, N-methylethanolamine, diglycolamine, bicine, tricine, tris(hydroxymethyl)aminomethane (Tris), and combinations thereof, and in a concentration of 300 ppm to 10,000 ppm, an organic ligand, wherein the organic ligand is a phosphonic acid, wherein the phosphonic acid is selected from the group consisting of diethylenetriamine penta(methylene phosphonic acid) (DTPMP), 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), hexamethylenediamine tetra(methylene phosphonic acid) (HDTMP), 2-hydroxy phosphonoacetic acid (HPAA), 2-carboxyethyl phosphonic acid (CEPA), phosphino carboxylic acid polymer, polyamino polyether methylene phosphonic acid (PAPEMP), 2-aminoethylphosphonic acid (AEPn), N-(phosphonomethyl)iminodiacetic acid (PMIDA), amino tris(methylene phosphonic acid) (ATMP), and combinations thereof, a corrosion inhibitor, which is a hydrazide compound, and wherein the hydrazide compound is carbohydrazide; and water, wherein the organic ligand is in a concentration of 50 ppm to 10,000ppm, and the corrosion inhibitor is in a concentration of 10 ppm to 5,000 ppm, and