A light emitting diode comprising: a substrate; a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the light emitting structure layer; a plurality of holes formed in the substrate, the holes penetrating the substrate from a topside to a lower side of the substrate, a first electrode disposed in the substrate and extended from a lower part of the substrate to a lower part of the first conductive type semiconductor layer, the first electrode being disposed under a region of the active layer; a contact portion of the first electrode being in contact with the lower part of the first conductive type semiconductor layer; and a first electrode layer disposed under the substrate and connected to the first electrode, wherein the contact portion of the first electrode is embedded through the lower surface of the first conductive type semiconductor layer, wherein the first electrode is provided in plurality, each first electrode being filled in a hole of said plurality of holes of the substrate, wherein the contact portion is provided in plurality, and the plurality of contact portions is closer to an edge part of the first conductive type semiconductor layer than to a center part of the first conductive type semiconductor layer, wherein the contact portions of the first electrodes are disposed in a region overlapping with at least a portion of the second electrode, wherein the second electrode is closer to an edge region of the second conductive type semiconductor layer than to a center region of a top surface of the second conductive type semiconductor layer, wherein the second electrode branches from a pad in a loop shape, wherein the loop shape is formed of a closed or open loop shape, wherein at least one side of the light emitting structure layer is spaced apart from a side of the substrate by a predetermined distance, and an outer region of a top surface of the substrate is opened, wherein a lower surface of the first electrode layer has an area greater than at least a lower surface of the first conductive type semiconductor layer or the active layer, characterised in that the plurality of contact portions has a width wider than a diameter of the plurality of first electrodes disposed in the substrate, and a lower surface of the plurality of contact portions is disposed on the top surface of the substrate. a substrate; a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the light emitting structure layer; a plurality of holes formed in the substrate, the holes penetrating the substrate from a topside to a lower side of the substrate, a first electrode disposed in the substrate and extended from a lower part of the substrate to a lower part of the first conductive type semiconductor layer, the first electrode being disposed under a region of the active layer; a contact portion of the first electrode being in contact with the lower part of the first conductive type semiconductor layer; and a first electrode layer disposed under the substrate and connected to the first electrode, wherein the contact portion of the first electrode is embedded through the lower surface of the first conductive type semiconductor layer, wherein the first electrode is provided in plurality, each first electrode being filled in a hole of said plurality of holes of the substrate, wherein the contact portion is provided in plurality, and the plurality of contact portions is closer to an edge part of the first conductive type semiconductor layer than to a center part of the first conductive type semiconductor layer, wherein the contact portions of the first electrodes are disposed in a region overlapping with at least a portion of the second electrode, wherein the second electrode is closer to an edge region of the second conductive type semiconductor layer than to a center region of a top surface of the second conductive type semiconductor layer, wherein the second electrode branches from a pad in a loop shape, wherein the loop shape is formed of a closed or open loop shape, wherein at least one side of the light emitting structure layer is spaced apart from a side of the substrate by a predetermined distance, and an outer region of a top surface of the substrate is opened, wherein a lower surface of the first electrode layer has an area greater than at least a lower surface of the first conductive type semiconductor layer or the active layer, characterised in that the plurality of contact portions has a width wider than a diameter of the plurality of first electrodes disposed in the substrate, and a lower surface of the plurality of contact portions is disposed on the top surface of the substrate.