An image sensor circuit, comprising: a pixel array, comprising a plurality of pixels (201, 301, 801, P 11 -P MK), each of the pixels (201, 301, 801, P 11 -P MK) comprising a photoelectric conversion unit for performing photoelectric conversion upon a light signal, a pixel of the pixels (201, 301, 801, P 11 -P MK) further comprising: a first processing unit, coupled to the photoelectric conversion unit of the pixel, the photoelectric conversion unit of the pixel (201, 301, 801, P 11 -P MK) being configured to convert the light signal into an electrical signal, the first processing unit being configured to receive the electrical signal through a floating diffusion node of the first processing unit, and generate a pixel output (PO P); and a second processing unit, configured to receive a reference signal through a reference node of the second processing unit, and generate a reference output (PO D), wherein the reference node is uncoupled from the photoelectric conversion unit of each of the pixels (201, 301, 801, P 11 -P MK), and the reference output (PO D) carries noise interference information; before the floating diffusion node receives the electrical signal, the first processing unit and the second processing unit included in the same pixel (201, 301, 801, P 11 -P MK) are configured to synchronously reset the floating diffusion node and the reference node, respectively; and a processing circuit (120, 420, 620), coupled to the pixel (201, 301, 801, P 11 -P MK), the processing circuit (120, 420, 620) being configured to generate a sensor output (Vout) according to the pixel output (POp) and the reference output (PO D). a pixel array, comprising a plurality of pixels (201, 301, 801, P 11 -P MK), each of the pixels (201, 301, 801, P 11 -P MK) comprising a photoelectric conversion unit for performing photoelectric conversion upon a light signal, a pixel of the pixels (201, 301, 801, P 11 -P MK) further comprising: a first processing unit, coupled to the photoelectric conversion unit of the pixel, the photoelectric conversion unit of the pixel (201, 301, 801, P 11 -P MK) being configured to convert the light signal into an electrical signal, the first processing unit being configured to receive the electrical signal through a floating diffusion node of the first processing unit, and generate a pixel output (PO P); and a second processing unit, configured to receive a reference signal through a reference node of the second processing unit, and generate a reference output (PO D), wherein the reference node is uncoupled from the photoelectric conversion unit of each of the pixels (201, 301, 801, P 11 -P MK), and the reference output (PO D) carries noise interference information; before the floating diffusion node receives the electrical signal, the first processing unit and the second processing unit included in the same pixel (201, 301, 801, P 11 -P MK) are configured to synchronously reset the floating diffusion node and the reference node, respectively; and a first processing unit, coupled to the photoelectric conversion unit of the pixel, the photoelectric conversion unit of the pixel (201, 301, 801, P 11 -P MK) being configured to convert the light signal into an electrical signal, the first processing unit being configured to receive the electrical signal through a floating diffusion node of the first processing unit, and generate a pixel output (PO P); and a second processing unit, configured to receive a reference signal through a reference node of the second processing unit, and generate a reference output (PO D), wherein the reference node is uncoupled from the photoelectric conversion unit of each of the pixels (201, 301, 801, P 11 -P MK), and the reference output (PO D) carries noise interference information; before the floating diffusion node receives the electrical signal, the first processing unit and the second processing unit included in the same pixel (201, 301, 801, P 11 -P MK) are configured to synchronously reset the floating diffusion node and the reference node, respectively; and a processing circuit (120, 420, 620), coupled to the pixel (201, 301, 801, P 11 -P MK), the processing circuit (120, 420, 620) being configured to generate a sensor output (Vout) according to the pixel output (POp) and the reference output (PO D).