mhurhangee/ep-ind-claims huggingface dataset:
System for producing and distributing electrical energy on an electrical grid defined by a given geographic area comprising: - A first entity for producing electrical energy, said main entity, operating continuously and producing at least a portion of electric power generated on said grid; - A second entity producing electricity from renewable energy, not associated with energy storage means, intermittently producing electrical energy produced on said grid; - A third entity for producing electrical energy able to operate as load following and adapted to supply power generated on said grid; characterised in that said system is dimensioned such that the change profile of the total energy potential over a year of said geographical area, corresponding to the sum of the change profile in the amount of electrical energy distributed over one year by said main electrical energy production entity and of the change profile in the amount of electrical energy produced over one year by said second electrical energy production entity from renewable energy, is less than the change profile in the demand for electrical energy over one year of said grid defined by said geographic area. - A first entity for producing electrical energy, said main entity, operating continuously and producing at least a portion of electric power generated on said grid; - A second entity producing electricity from renewable energy, not associated with energy storage means, intermittently producing electrical energy produced on said grid; - A third entity for producing electrical energy able to operate as load following and adapted to supply power generated on said grid; characterised in that said system is dimensioned such that the change profile of the total energy potential over a year of said geographical area, corresponding to the sum of the change profile in the amount of electrical energy distributed over one year by said main electrical energy production entity and of the change profile in the amount of electrical energy produced over one year by said second electrical energy production entity from renewable energy, is less than the change profile in the demand for electrical energy over one year of said grid defined by said geographic area.
Pump device with a drive motor and a fluid pump coupled thereto, which has a pump housing with at least one suction-side inlet channel and one pressure-side outlet channel, and with a pressure vessel which is connected in a communicating manner to the outlet channel of the fluid pump; wherein at least three functional assemblies are provided, in which the drive motor with the fluid pump is integrated in the first functional assembly, the pressure vessel is integrated in the second functional assembly, and a pressure switch associated with the discharge channel on the pressure side is integrated in the third functional assembly; wherein the functional assemblies are arranged compactly in space relative to one another and are connected to one another; and wherein fluid line sections of a fluid line extending between the at least three functional assemblies are connected to one another by at least one fluid-tight plug-in connection (8, 9), for which purpose a plug-in receptacle and/or a pipeline section for a coaxial, detachable plug-in connection in the direction of a central longitudinal axis of a volume section delimited by the plug-in receptacle and the pipeline section are associated with the functional assemblies; characterised in that the plug-in connection (8, 9) is assigned at least one securing device for mechanical locking, which is in the form of a U-shaped securing clip for positive connection of the plug-in connection to the pipeline section, wherein at least one fluid pipeline section is configured as a form-stable pipeline; and in that, in the case of form-stable pipelines, the pipeline section and the plug-in receptable are formed directly, in particular in one piece, wherein a rigid pressure line is provided on the outlet channel, which is designed for a communicating connection of the outlet channel with the pressure switch and/or a manometer, wherein corresponding plug-in receptables and/or pipe sections of the fluid-tight plug-in connection are provided in particular on the pressure line, on the outlet channel and/or on the pressure switch.
An in vitro process for real-time measurement of the thickness of the cell wall of walled cells, comprising: a) providing at least one isolated cell having a cell wall, the outer side of said cell wall being labeled with at least one first detectable marker, and the inner side of said cell wall being labeled with at least one second detectable marker, said markers being distinct from each other; b) imaging said cell and detecting said markers using a high-resolution optical device, preferably using a photonic microscope; c) determining the distance between said first marker on the outer side and said second marker on the inner side, thereby measuring the thickness of the cell wall. a) providing at least one isolated cell having a cell wall, the outer side of said cell wall being labeled with at least one first detectable marker, and the inner side of said cell wall being labeled with at least one second detectable marker, said markers being distinct from each other; b) imaging said cell and detecting said markers using a high-resolution optical device, preferably using a photonic microscope; c) determining the distance between said first marker on the outer side and said second marker on the inner side, thereby measuring the thickness of the cell wall.
A store merge apparatus comprising: storage means for storing a plurality of entries including a plurality of blocks capable of storing block data, and entry merge state information indicating, for each group into which the plurality of entries are divided, a state of merge in the plurality of entries included in the group, in association with each other; merge means for executing, based on a store command being received from an external apparatus and instructing writing of data to a storage apparatus, merge processing of storing the data in the entry of the storage means, and updating the entry merge state information associated with a group including an entry serving as a target of the merge processing; and output means for selecting a group including a merge-completed entry in which the data are stored in all blocks, based on the entry merge state information, further selecting the merge-completed entry from the selected group, and outputting the selected merge-completed entry to the storage apparatus, wherein the entry merge state information further includes under merge information indicating a group including an under merge entry having a merge rate equal to or larger than a predetermined value, and when a group including the merge-completed entry is not present, the output means selects the group including the under merge entry, based on the under merge information, further selects the under merge entry from the selected group, and outputs the selected under merge entry to the storage apparatus. storage means for storing a plurality of entries including a plurality of blocks capable of storing block data, and entry merge state information indicating, for each group into which the plurality of entries are divided, a state of merge in the plurality of entries included in the group, in association with each other; merge means for executing, based on a store command being received from an external apparatus and instructing writing of data to a storage apparatus, merge processing of storing the data in the entry of the storage means, and updating the entry merge state information associated with a group including an entry serving as a target of the merge processing; and output means for selecting a group including a merge-completed entry in which the data are stored in all blocks, based on the entry merge state information, further selecting the merge-completed entry from the selected group, and outputting the selected merge-completed entry to the storage apparatus, wherein the entry merge state information further includes under merge information indicating a group including an under merge entry having a merge rate equal to or larger than a predetermined value, and when a group including the merge-completed entry is not present, the output means selects the group including the under merge entry, based on the under merge information, further selects the under merge entry from the selected group, and outputs the selected under merge entry to the storage apparatus.
A negative pressure wound therapy system, comprising: at least one sensor coupled to a wound dressing for a wound of a patient, the at least one sensor configured to detect a pressure in the wound dressing; a sealable aperture coupled to the at least one sensor; and a processing circuit configured to: open the sealable aperture to induce a pressure change between the pressure in the wound dressing and atmospheric pressure; calculate a rate of pressure decay in the wound dressing based on the pressure change; and calculate a wound dressing fluid absorbent capacity based on the rate of pressure decay; and a communications circuit coupled to the processing circuit, the communications circuit configured to transmit data to a remote electronic device. at least one sensor coupled to a wound dressing for a wound of a patient, the at least one sensor configured to detect a pressure in the wound dressing; a sealable aperture coupled to the at least one sensor; and a processing circuit configured to: open the sealable aperture to induce a pressure change between the pressure in the wound dressing and atmospheric pressure; calculate a rate of pressure decay in the wound dressing based on the pressure change; and calculate a wound dressing fluid absorbent capacity based on the rate of pressure decay; and open the sealable aperture to induce a pressure change between the pressure in the wound dressing and atmospheric pressure; calculate a rate of pressure decay in the wound dressing based on the pressure change; and calculate a wound dressing fluid absorbent capacity based on the rate of pressure decay; and a communications circuit coupled to the processing circuit, the communications circuit configured to transmit data to a remote electronic device.
A waste feed device for feeding waste into a combustion space of a waste incineration plant, comprising a waste feed shaft wall surrounding a waste feed shaft, characterized in that at least a part of the waste feed shaft wall is formed from a multiplicity of separate panels (24a-p) which are connected releasably to one another and which comprise, on their side facing the waste feed shaft, a panel inner wall and, on their side facing away from the waste feed shaft, a panel outer wall which is spaced apart from the panel inner wall and which with the panel inner wall surrounds a panel cavity.
A method for forming a memory, comprising: forming a substrate and a semiconductor layer located on the substrate; patterning the semiconductor layer to form a plurality of first isolation structures, wherein part of the semiconductor layer retained between two adjacent ones of the first isolation structures forms channel regions, wherein each of the first isolation structures comprises a first through hole and a second through hole penetrating through the semiconductor layer in a direction perpendicular to a top surface of the substrate, and a first isolation pillar formed by the semiconductor layer retained between the first through hole and the second through hole; forming a first filling layer that fills up the first through hole and the second through hole; removing the first isolation pillar to form a third through hole located in the first filling layer; forming a barrier layer that fills up the third through hole; exposing the channel regions by removing the first filling layer; and forming a gate layer that covers surfaces of the channel regions; and thicknesses of the gate layer located on two opposite sides of the barrier layer being equal. forming a substrate and a semiconductor layer located on the substrate; patterning the semiconductor layer to form a plurality of first isolation structures, wherein part of the semiconductor layer retained between two adjacent ones of the first isolation structures forms channel regions, wherein each of the first isolation structures comprises a first through hole and a second through hole penetrating through the semiconductor layer in a direction perpendicular to a top surface of the substrate, and a first isolation pillar formed by the semiconductor layer retained between the first through hole and the second through hole; forming a first filling layer that fills up the first through hole and the second through hole; removing the first isolation pillar to form a third through hole located in the first filling layer; forming a barrier layer that fills up the third through hole; exposing the channel regions by removing the first filling layer; and forming a gate layer that covers surfaces of the channel regions; and thicknesses of the gate layer located on two opposite sides of the barrier layer being equal.
A heat-ray reflecting film structure used for an agricultural greenhouse utilizing sunlight, being characterized in that the heat-ray reflecting film structure is formed of a woven or knitted fabric weaving or knitting a narrow band-shaped tape as a warp or a weft and a filament yarn (12, 13) or a spun yarn as a weft or a warp, wherein the narrow band-shaped tape is obtained by cutting an original film in which a lubricity-attached layer is provided on at least one surface of a multi-layer laminated film made by laminating at least two kinds of resin layers with different refractive indices alternately and having an average transmittance at 80% or more for light with wavelength of 400-750 nm and an average reflectance at 70% or more for light with wavelength of 800-1100 nm, and a thickness of the filament yarn or the spun yarn is 0.01-0.30 times as thick as a width of the narrow band-shaped tape and intervals between the adjacent narrow band-shaped tapes are 0.1-0.5 times the width of the narrow band-shaped tape.
A radiation dosimeter comprising: a radiation detector made of a semiconductor that is configured to detect radiation; a shield member that covers the radiation detector; and an arithmetic unit that is configured to calculate a dose of radiation based on energy of radiation detected by the radiation detector and a conversion factor that is defined in accordance with energy of radiation scattered by the shield member, wherein the radiation detector is configured to detect the radiation scattered by the shield member, characterised in that the shield member comprises any of Au and stainless steel. a radiation detector made of a semiconductor that is configured to detect radiation; a shield member that covers the radiation detector; and an arithmetic unit that is configured to calculate a dose of radiation based on energy of radiation detected by the radiation detector and a conversion factor that is defined in accordance with energy of radiation scattered by the shield member, wherein the radiation detector is configured to detect the radiation scattered by the shield member, characterised in that the shield member comprises any of Au and stainless steel.
A femtosecond laser system comprising: a pump laser source (1, 1A) emitting a train of picosecond-range optical pump pulses; at least one continuous wave, CW, seed source (3, 4); a length of optical fiber coupled to said pump laser source and to said at least one CW seed source so that emission from said at least one CW seed source co-propagates with said train of picosecond-range optical pump pulses, and in which at least one Raman shift conversion from the wavelength of said pump laser source to the wavelength of said at least one CW seed source takes place and in which self-phase modulation of the Raman shifted pulses takes place to produce a spectrally broadened pulse train of picosecond-range duration optical pulses; at least one optical pulse compressor to compress said spectrally broadened pulse train of picosecond-range duration optical pulses to a train of femtosecond-range duration pulses; wherein a pulse width duration and peak power of said train of picosecond-range optical pump pulses leads to efficient Raman conversion and self-phase modulation of said Raman shifted pulses in said length of optical fiber so that said optical compressor can efficiently provide said train of femtosecond-range duration pulses at the wavelength of said Raman shifted pulses. a pump laser source (1, 1A) emitting a train of picosecond-range optical pump pulses; at least one continuous wave, CW, seed source (3, 4); a length of optical fiber coupled to said pump laser source and to said at least one CW seed source so that emission from said at least one CW seed source co-propagates with said train of picosecond-range optical pump pulses, and in which at least one Raman shift conversion from the wavelength of said pump laser source to the wavelength of said at least one CW seed source takes place and in which self-phase modulation of the Raman shifted pulses takes place to produce a spectrally broadened pulse train of picosecond-range duration optical pulses; at least one optical pulse compressor to compress said spectrally broadened pulse train of picosecond-range duration optical pulses to a train of femtosecond-range duration pulses; wherein a pulse width duration and peak power of said train of picosecond-range optical pump pulses leads to efficient Raman conversion and self-phase modulation of said Raman shifted pulses in said length of optical fiber so that said optical compressor can efficiently provide said train of femtosecond-range duration pulses at the wavelength of said Raman shifted pulses.
A method for reducing the friction of surfaces sliding and/or rolling over each other, in which at least one of the surfaces is a metallic surface having a micro-roughness with roughness edges and/or roughness peaks, and the at least one metallic surface is subjected to a processing with energetic radiation before use, characterized in that the processing is carried out with pulsed or with continuous energetic radiation, and pulse duration and energy density as process parameters of the pulsed energetic radiation, or intensity and feed rate as process parameters of the continuous energetic radiation are selected in such manner that in each case the material is in a molten state only for a period in the range between 5 ns and 500 ns, so that the roughness edges and/or roughness peaks of the metallic surface are merely rounded with the energetic radiation by brief melting, without material removal.
A method to perform opponent color space conversion, the method comprising: computing an array of color value samples of a first color space; the method being characterized by: determining which sample points of the array fall inside a convex hull defined by spectral locus points as boundary points, thereby obtaining in-gamut points; converting the in-gamut points to an opponent color space using an initial opponent color conversion matrix to obtain computed color values in the opponent color space; determining a maximum range of the computed color values in the opponent color space; computing an error metric describing a distance of the computed color values in the opponent color space from the maximum range of the opponent color space; and optimizing the color conversion matrix by minimizing the error metric using optimization routines such that the color conversion matrix generating the computed color values in the opponent color space is optimized for visible colors. computing an array of color value samples of a first color space; the method being characterized by: determining which sample points of the array fall inside a convex hull defined by spectral locus points as boundary points, thereby obtaining in-gamut points; converting the in-gamut points to an opponent color space using an initial opponent color conversion matrix to obtain computed color values in the opponent color space; determining a maximum range of the computed color values in the opponent color space; computing an error metric describing a distance of the computed color values in the opponent color space from the maximum range of the opponent color space; and optimizing the color conversion matrix by minimizing the error metric using optimization routines such that the color conversion matrix generating the computed color values in the opponent color space is optimized for visible colors.
Injection molded article comprising a propylene homopolymer having (a) a melt flow rate MFR 2 (230 °C / 2.16 kg) measured according to ISO 1133 in the range of 40 to 120 g/10min; (b) a pentad isotacticity (mmmm) of more than 92.5 % determined by 13 C-NMR; (c) a xylene cold soluble content determined according ISO 16152 (25 °C) of below 4.0 wt.-%; and (d) a meso sequence length of 91.0 to 160; MSL4 is calculated by formula MSL 4 = 2 ∗ mmmm mmmr + 4 wherein "[mmmm]" is % of mmmm pentads "[mmmr]" is % of mmmr pentads, determined by 13 C-NMR spectroscopy. (a) a melt flow rate MFR 2 (230 °C / 2.16 kg) measured according to ISO 1133 in the range of 40 to 120 g/10min; (b) a pentad isotacticity (mmmm) of more than 92.5 % determined by 13 C-NMR; (c) a xylene cold soluble content determined according ISO 16152 (25 °C) of below 4.0 wt.-%; and (d) a meso sequence length of 91.0 to 160; MSL4 is calculated by formula MSL 4 = 2 ∗ mmmm mmmr + 4 wherein "[mmmm]" is % of mmmm pentads "[mmmr]" is % of mmmr pentads, determined by 13 C-NMR spectroscopy. "[mmmm]" is % of mmmm pentads "[mmmr]" is % of mmmr pentads, determined by 13 C-NMR spectroscopy.
A method for passing a parameter from a first program comprising instructions of the x86 instruction set architecture, ISA, to a second program comprising instructions of the Advanced RISC Machines, ARM, ISA, the method operating on a processor capable of executing in both x86 and ARM ISA operating modes, the method characterized by: running the first program in an x86 ISA operating mode; writing a parameter to a selected location in a register space of the processor that will not be overwritten when initializing the processor for an ARM ISA operating mode, wherein the register space forms part of a register file that instantiates the registers of the x86 and ARM ISAs; causing, by the first program, the processor to switch from running in the x86 ISA operating mode to running in the ARM ISA operating mode; and reading, by the second program, the parameter from the selected location; wherein the method comprises mapping the register space to machine specific register, MSR, address space, enabling the first program running in the x86 ISA mode to access register space that is non-architectural to the x86 ISA operating mode but architectural to one or more other operating modes using x86 instructions configured to read and write to MSRs. running the first program in an x86 ISA operating mode; writing a parameter to a selected location in a register space of the processor that will not be overwritten when initializing the processor for an ARM ISA operating mode, wherein the register space forms part of a register file that instantiates the registers of the x86 and ARM ISAs; causing, by the first program, the processor to switch from running in the x86 ISA operating mode to running in the ARM ISA operating mode; and reading, by the second program, the parameter from the selected location; wherein the method comprises mapping the register space to machine specific register, MSR, address space, enabling the first program running in the x86 ISA mode to access register space that is non-architectural to the x86 ISA operating mode but architectural to one or more other operating modes using x86 instructions configured to read and write to MSRs.