A method of manufacturing a contact for testing a semiconductor device, the method comprising: a first stacking stage of continuously alternately bonding and stacking a dielectric layer and a conductor layer on one another to a certain height, forming a first stacked body; a first cutting stage of vertically cutting a lateral side of the first stacked body by a constant thickness across a whole height of the first stacked body, forming a first cut body which consists of a plurality of sets of a dielectric layer and a conductor layer, which extends in longitudinal directions, respectively, wherein the sets being continuously arranged on one another; a second stacking stage of continuously alternately bonding and stacking the first cut body, which is disposed flat, and another dielectric layer in parallel on one another to a certain height, forming a second stacked body; and a second cutting stage of vertically cutting a lateral side of the second stacked body by a constant thickness across a whole height of the second stacked body, forming a second cut body which consists of a plurality of sets of a dielectric layer and a second layer disposed on one side of the dielectric layer, wherein the dielectric layer extends in a longitudinal direction thereof, and the second layer consists of a plurality of pairs of a dielectric part and a conductor part, the pairs being continuously provided in a longitudinal direction of the second layer, wherein the sets of the dielectric layer and the second layer are repeatedly stacked on one another, characterized in that the first stacking stage is carried out such that a dielectric material and a conductor material are liquefied, and the liquefied materials are coated onto a base material by means of any one of coating, painting, and spraying, and then are cured. a first stacking stage of continuously alternately bonding and stacking a dielectric layer and a conductor layer on one another to a certain height, forming a first stacked body; a first cutting stage of vertically cutting a lateral side of the first stacked body by a constant thickness across a whole height of the first stacked body, forming a first cut body which consists of a plurality of sets of a dielectric layer and a conductor layer, which extends in longitudinal directions, respectively, wherein the sets being continuously arranged on one another; a second stacking stage of continuously alternately bonding and stacking the first cut body, which is disposed flat, and another dielectric layer in parallel on one another to a certain height, forming a second stacked body; and a second cutting stage of vertically cutting a lateral side of the second stacked body by a constant thickness across a whole height of the second stacked body, forming a second cut body which consists of a plurality of sets of a dielectric layer and a second layer disposed on one side of the dielectric layer, wherein the dielectric layer extends in a longitudinal direction thereof, and the second layer consists of a plurality of pairs of a dielectric part and a conductor part, the pairs being continuously provided in a longitudinal direction of the second layer, wherein the sets of the dielectric layer and the second layer are repeatedly stacked on one another, characterized in that the first stacking stage is carried out such that a dielectric material and a conductor material are liquefied, and the liquefied materials are coated onto a base material by means of any one of coating, painting, and spraying, and then are cured.