A segmented semiconductor light emitting device (100C, 100E) for a flash module (250, 250a, 250b, 250c), comprising: a die comprising a light emitting semiconductor structure formed from a substrate on which an n-layer, a light emitting active region and a p-layer are grown, the light-emitting active region being disposed between the n-layer and the p-layer, the light emitting active region configured to emit pump light having a first spectrum, and a plurality of trenches (170a, 170b) formed through the p-layer, the active region and at least a portion of the n-layer to separate the die into a plurality of individually addressable segments (160a, 160b, 160c) and wherein the trenches electrically insulate the individual segments (160a, 160b, 160c) of the die from one another; wherein each segment is provided with its own contacts (145, 150); and a wavelength-converting layer (120a - 120d; 180, 185, 190) disposed in contact with the substrate, configured to convert the pump light emitted by an active layer to light having a second spectrum different from the first spectrum and to limit an energy ratio of the pump light that passes through the wavelength-converting layer (120a - 120d; 180, 185, 190) unconverted to total light emitted by the segmented semiconductor light emitting device to less than 10%, and wherein - the uppermost layer of the semiconductor light emitting device is the wavelength-converting layer, or - the uppermost layer of the semiconductor light emitting device comprises a scattering layer disposed over the wavelength-converting layer; and wherein - the uppermost layer (120b, 195b) of the semiconductor light emitting device is partially segmented by separations (187a, 187b; 197a, 197b) formed in the uppermost layer (120b, 195b). a die comprising a light emitting semiconductor structure formed from a substrate on which an n-layer, a light emitting active region and a p-layer are grown, the light-emitting active region being disposed between the n-layer and the p-layer, the light emitting active region configured to emit pump light having a first spectrum, and a plurality of trenches (170a, 170b) formed through the p-layer, the active region and at least a portion of the n-layer to separate the die into a plurality of individually addressable segments (160a, 160b, 160c) and wherein the trenches electrically insulate the individual segments (160a, 160b, 160c) of the die from one another; wherein each segment is provided with its own contacts (145, 150); and a wavelength-converting layer (120a - 120d; 180, 185, 190) disposed in contact with the substrate, configured to convert the pump light emitted by an active layer to light having a second spectrum different from the first spectrum and to limit an energy ratio of the pump light that passes through the wavelength-converting layer (120a - 120d; 180, 185, 190) unconverted to total light emitted by the segmented semiconductor light emitting device to less than 10%, and wherein - the uppermost layer of the semiconductor light emitting device is the wavelength-converting layer, or - the uppermost layer of the semiconductor light emitting device comprises a scattering layer disposed over the wavelength-converting layer; - the uppermost layer of the semiconductor light emitting device is the wavelength-converting layer, or - the uppermost layer of the semiconductor light emitting device comprises a scattering layer disposed over the wavelength-converting layer; and wherein - the uppermost layer (120b, 195b) of the semiconductor light emitting device is partially segmented by separations (187a, 187b; 197a, 197b) formed in the uppermost layer (120b, 195b). - the uppermost layer (120b, 195b) of the semiconductor light emitting device is partially segmented by separations (187a, 187b; 197a, 197b) formed in the uppermost layer (120b, 195b).