Method for pre-programming a matrix of non-volatile resistive memory cells, said memory cells (310, 320) comprising a dielectric material arranged between two conductive electrodes (120, 130), said memory cells (310, 320) being initially in an original resistive state (original HRS) corresponding to a first resistive state and the dielectric material being capable of being electrically modified so as to bring the memory cell from the original resistive state (original HRS) up to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice less than the resistance of the memory cell in the original resistive state (original HRS), the method comprising the following steps: before assembly of a component containing said matrix with a support: programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) up to said other resistive state (LRS, programmed HRS); leaving the other memory cells in the original resistive state thereof (original HRS); characterised in that the method comprises the following step, after assembly of the component containing said matrix with the support: applying on all the cells (310, 320) of the matrix, an intermediate voltage, said intermediate voltage being: - less than a first range of voltages of sufficiently increased values to be able to bring a memory cell (310, 320) from the original resistive state (original HRS) up to a second resistive state wherein the resistance of the memory cell is at least two less than the resistance of the memory cell in the original resistive state (original HRS), the intermediate voltage being insufficient to modify the resistive state of the cells which had been left in the original resistive state thereof (original HRS) by the programming step carried out before assembly; - greater than a second range of voltages of values less than the first range but sufficiently increased to be able to bring a memory cell (310, 320) which is not in the original resistive state (original HRS) up to said second resistive state, the first and second ranges of voltages being separate. before assembly of a component containing said matrix with a support: programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) up to said other resistive state (LRS, programmed HRS); leaving the other memory cells in the original resistive state thereof (original HRS); characterised in that the method comprises the following step, after assembly of the component containing said matrix with the support: applying on all the cells (310, 320) of the matrix, an intermediate voltage, said intermediate voltage being: - less than a first range of voltages of sufficiently increased values to be able to bring a memory cell (310, 320) from the original resistive state (original HRS) up to a second resistive state wherein the resistance of the memory cell is at least two less than the resistance of the memory cell in the original resistive state (original HRS), the intermediate voltage being insufficient to modify the resistive state of the cells which had been left in the original resistive state thereof (original HRS) by the programming step carried out before assembly; - greater than a second range of voltages of values less than the first range but sufficiently increased to be able to bring a memory cell (310, 320) which is not in the original resistive state (original HRS) up to said second resistive state, the first and second ranges of voltages being separate. - less than a first range of voltages of sufficiently increased values to be able to bring a memory cell (310, 320) from the original resistive state (original HRS) up to a second resistive state wherein the resistance of the memory cell is at least two less than the resistance of the memory cell in the original resistive state (original HRS), the intermediate voltage being insufficient to modify the resistive state of the cells which had been left in the original resistive state thereof (original HRS) by the programming step carried out before assembly; - greater than a second range of voltages of values less than the first range but sufficiently increased to be able to bring a memory cell (310, 320) which is not in the original resistive state (original HRS) up to said second resistive state, the first and second ranges of voltages being separate.