A method of manufacturing an optoelectronic semiconductor device comprising the following steps - arranging a semiconductor layer stack having a pn junction on a substrate, - laterally structuring said semiconductor layer stack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced apart from each other in a lateral direction, - separating the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, - applicating of at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier which has electrical connection points and at least one conductor track, the first semiconductor body being provided during operation of the semiconductor component for generating electromagnetic radiation, and the second semiconductor body being provided as an ESD protective diode for the first semiconductor body, - electrically connecting of the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by means of the connection points and the at least one conductor track in such a way that the pn-junction of the first semiconductor body is connected antiparallel to the pn-junction of the second semiconductor body, - wherein an electrically conductive, metallic layer is arranged on the upper side of the second semiconductor body facing away from the connection carrier, - wherein the at least one conductor track for electrically connecting the first semiconductor body to the second semiconductor body is closed only after the application and testing of the first semiconductor body, and the at least one conductor track has an interruption immediately after the application of the semiconductor bodies (1, 2), wherein the interruption is closed after the testing for the functional capability of the first semiconductor body by means of an electrically conductive paste. - arranging a semiconductor layer stack having a pn junction on a substrate, - laterally structuring said semiconductor layer stack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced apart from each other in a lateral direction, - separating the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, - applicating of at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier which has electrical connection points and at least one conductor track, the first semiconductor body being provided during operation of the semiconductor component for generating electromagnetic radiation, and the second semiconductor body being provided as an ESD protective diode for the first semiconductor body, - electrically connecting of the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by means of the connection points and the at least one conductor track in such a way that the pn-junction of the first semiconductor body is connected antiparallel to the pn-junction of the second semiconductor body, - wherein an electrically conductive, metallic layer is arranged on the upper side of the second semiconductor body facing away from the connection carrier, - wherein the at least one conductor track for electrically connecting the first semiconductor body to the second semiconductor body is closed only after the application and testing of the first semiconductor body, and the at least one conductor track has an interruption immediately after the application of the semiconductor bodies (1, 2), wherein the interruption is closed after the testing for the functional capability of the first semiconductor body by means of an electrically conductive paste.