A semiconductor device comprising: a substrate having a first edge and a second edge opposing each other in a first direction and a third edge and a fourth edge opposing each other in a second direction which intersects with the first direction; a plurality of first semiconductor regions extending in the first direction and arranged in the second direction on the substrate, and having a first conductivity; a plurality of second semiconductor regions extending in the first direction and arranged at the edges of the first semiconductor regions in the second direction within the first semiconductor region, and having a second conductivity; a plurality of control electrodes arranged between adjacent second semiconductor regions, the control electrodes extending in the first direction and being arranged in rows spaced in the second direction; an interlayer insulation film including a plurality of extension parts, connection parts, and apertures, wherein the extension parts extend in the first direction and cover the control electrodes arranged under themselves; the connection parts connect adjacent extension parts; and the apertures expose at least a part of a surface area of the first semiconductor regions and at least a part of a surface area of the second semiconductor regions, and have a shape defined by the extension parts and the connection parts, and are arranged in rows along the first direction; and an electrode arranged on the interlayer insulation film and electrically connecting the first semiconductor regions and the second semiconductor regions via the apertures of the interlayer insulation film, wherein the control electrodes are formed in a stripe shape in the first direction and the interlayer insulation film is formed in a mesh shape within a bonding area of the electrode. a substrate having a first edge and a second edge opposing each other in a first direction and a third edge and a fourth edge opposing each other in a second direction which intersects with the first direction; a plurality of first semiconductor regions extending in the first direction and arranged in the second direction on the substrate, and having a first conductivity; a plurality of second semiconductor regions extending in the first direction and arranged at the edges of the first semiconductor regions in the second direction within the first semiconductor region, and having a second conductivity; a plurality of control electrodes arranged between adjacent second semiconductor regions, the control electrodes extending in the first direction and being arranged in rows spaced in the second direction; an interlayer insulation film including a plurality of extension parts, connection parts, and apertures, wherein the extension parts extend in the first direction and cover the control electrodes arranged under themselves; the connection parts connect adjacent extension parts; and the apertures expose at least a part of a surface area of the first semiconductor regions and at least a part of a surface area of the second semiconductor regions, and have a shape defined by the extension parts and the connection parts, and are arranged in rows along the first direction; and an electrode arranged on the interlayer insulation film and electrically connecting the first semiconductor regions and the second semiconductor regions via the apertures of the interlayer insulation film, wherein the control electrodes are formed in a stripe shape in the first direction and the interlayer insulation film is formed in a mesh shape within a bonding area of the electrode.