A multi-cell MOSFET device comprising: an n-type drift layer on an n-type substrate; a plurality of MOSFET cells, each of the MOSFET cells comprising: first and second p-type well regions in spaced relation on the n-type drift layer; an n-type JFET region on the n-type drift layer between the first and second p-type well regions, wherein each of the first and second p-type well regions has a channel region adjacent the JFET region; first and second n-type source regions on each of the first and second p- type well regions, adjacent the channel regions of each of the p-type well regions, and opposite to the JFET region, wherein the first and second n-type source regions have a higher dopant concentration than the n-type drift layer; source ohmic contacts on each of the first and second n-type source regions; a gate dielectric layer on the JFET region and channel regions; a gate layer on the gate dielectric layer; an interlayer dielectric layer on the gate layer; and first and second p-type body contact regions on the n-type drift layer, adjacent the first and second n-type source regions, and opposite to the channel regions of each of the p-type well regions, wherein the first and second p-type body contact regions have a higher dopant concentration than the first and second p-type well regions and wherein the first and second p-type body contact regions have a depth in the n-type drift layer which is greater than the depth of the p-type well region in the n-type drift layer; an n-type Schottky region on the n-type drift layer adjacent the p-type body contact regions of adjacent MOSFET cells; and a source metal layer on and in contact with the source ohmic contacts; a Schottky metal layer on and in contact with the n-type Schottky region, the Schottky metal layer forming a Schottky contact with the n-type Schottky region, wherein, the first and second p-type well regions are elongate regions spaced from one another in an x direction and extend in a y direction perpendicular to the x direction, wherein the x direction and the y direction are parallel to the n-type substrate; and, the n-type JFET region is an elongate region extending in the x direction between the first and second p-type well regions, wherein the Schottky region comprises a single continuous elongate region extending in the y direction between and adjacent to p-type body contact regions of adjacent MOSFET cells. an n-type drift layer on an n-type substrate; a plurality of MOSFET cells, each of the MOSFET cells comprising: first and second p-type well regions in spaced relation on the n-type drift layer; an n-type JFET region on the n-type drift layer between the first and second p-type well regions, wherein each of the first and second p-type well regions has a channel region adjacent the JFET region; first and second n-type source regions on each of the first and second p- type well regions, adjacent the channel regions of each of the p-type well regions, and opposite to the JFET region, wherein the first and second n-type source regions have a higher dopant concentration than the n-type drift layer; source ohmic contacts on each of the first and second n-type source regions; a gate dielectric layer on the JFET region and channel regions; a gate layer on the gate dielectric layer; an interlayer dielectric layer on the gate layer; and first and second p-type body contact regions on the n-type drift layer, adjacent the first and second n-type source regions, and opposite to the channel regions of each of the p-type well regions, wherein the first and second p-type body contact regions have a higher dopant concentration than the first and second p-type well regions and wherein the first and second p-type body contact regions have a depth in the n-type drift layer which is greater than the depth of the p-type well region in the n-type drift layer; an n-type Schottky region on the n-type drift layer adjacent the p-type body contact regions of adjacent MOSFET cells; and a source metal layer on and in contact with the source ohmic contacts; a Schottky metal layer on and in contact with the n-type Schottky region, the Schottky metal layer forming a Schottky contact with the n-type Schottky region, wherein, the first and second p-type well regions are elongate regions spaced from one another in an x direction and extend in a y direction perpendicular to the x direction, wherein the x direction and the y direction are parallel to the n-type substrate; and, the n-type JFET region is an elongate region extending in the x direction between the first and second p-type well regions, wherein the Schottky region comprises a single continuous elongate region extending in the y direction between and adjacent to p-type body contact regions of adjacent MOSFET cells.