mhurhangee/ep-ind-claims huggingface dataset:
A composite of vapor grown carbon fiber and inorganic fine particles comprising vapor grown carbon fiber, each fiber filament of the carbon fiber having a structure with hollow space extending along its axis, a diameter of 0.001 to 1 μm and an aspect ratio of 5 to 15,000; and inorganic fine particles having a particle size of 0.0001 to 5 μm, the particles being deposited onto the surface of the carbon fiber, wherein the ratio of the average diameter of the vapor grown carbon fiber to the average particle size of the inorganic fine particles is 1: 0.01 to 1: 5, wherein the ratio by mass of the vapor grown carbon fiber to the inorganic fine particles is 1: 0.05 to 1: 30, wherein the inorganic fine particles are formed of an element belonging to groups 2 to 15 of the periodic table, or a compound containing the element, and wherein the element belonging to groups 2 to 15 of the periodic table is magnesium, calcium, titanium, zirconium, vanadium, chromium, molybdenum, tungsten, manganese, iron, ruthenium, osmium, cobalt, rhodium, nickel, palladium, platinum, copper, silver, gold, zinc, cadmium, aluminum, gallium, indium, silicon, germanium, tin, phosphorus or bismuth, with the proviso that the following is excluded: a carbonaceous material, comprising a vapor grown carbon fiber, each fiber filament of the carbon fiber containing a hollow space along the filament in its interior and having a multi-layer structure, an outer diameter of 2 to 500 nm and an aspect ratio of 10 to 15,000, and graphitic particles and amorphous carbon particles, wherein the amount of the vapor grown carbon fiber is 10 to 90 mass%, the amount of the graphitic particles is 7 to 65 mass%, and the amount of the amorphous carbon particles is 7 to 35 mass%, wherein the graphitic particles or the amorphous carbon particles have an average particle size of 0.1 to 100 μm. a carbonaceous material, comprising a vapor grown carbon fiber, each fiber filament of the carbon fiber containing a hollow space along the filament in its interior and having a multi-layer structure, an outer diameter of 2 to 500 nm and an aspect ratio of 10 to 15,000, and graphitic particles and amorphous carbon particles, wherein the amount of the vapor grown carbon fiber is 10 to 90 mass%, the amount of the graphitic particles is 7 to 65 mass%, and the amount of the amorphous carbon particles is 7 to 35 mass%, wherein the graphitic particles or the amorphous carbon particles have an average particle size of 0.1 to 100 μm.
A device for closing a target tissue comprising: an elongate body; a snare loop assembly comprising a snare and a suture loop releasably coupled to the snare, and the snare loop assembly extending at least partially from the elongate body; a shuttle releasably coupled to the elongate body, wherein the shuttle is connected to a distal portion of the snare; and a handle attached to the elongate body, the handle comprising a track and a snare control coupled to the track, a lock, a suture control configured to tighten the suture loop, and a release assembly, wherein the track comprises a first portion and a second portion and the lock is configured to limit movement of the snare control along the second portion of the track, and wherein the release assembly is configured to release the shuttle from the elongate body and wherein a proximal portion of the suture control is configured to engage the release assembly through an opening in the handle to release the lock to allow movement of the snare control along the second portion of the track. an elongate body; a snare loop assembly comprising a snare and a suture loop releasably coupled to the snare, and the snare loop assembly extending at least partially from the elongate body; a shuttle releasably coupled to the elongate body, wherein the shuttle is connected to a distal portion of the snare; and a handle attached to the elongate body, the handle comprising a track and a snare control coupled to the track, a lock, a suture control configured to tighten the suture loop, and a release assembly, wherein the track comprises a first portion and a second portion and the lock is configured to limit movement of the snare control along the second portion of the track, and wherein the release assembly is configured to release the shuttle from the elongate body and wherein a proximal portion of the suture control is configured to engage the release assembly through an opening in the handle to release the lock to allow movement of the snare control along the second portion of the track.
A method for cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: applying liquid on the semiconductor wafer; controlling, based on a timer, a power supply of a transducer to deliver acoustic energy to the liquid at a first frequency and a first power level for a predetermined first time period, wherein bubble implosion occurs in the first time period; and controlling, based on the timer, the power supply of the transducer to deliver acoustic energy to the liquid at a second frequency and a second power level for a predetermined second time period, wherein the first and second time periods are alternately applied one after another for a predetermined number of cycles, wherein the first and second time periods, the first and second power levels, and the first and second frequencies are determined such that no feature is damaged as a result of delivering the acoustic energy. applying liquid on the semiconductor wafer; controlling, based on a timer, a power supply of a transducer to deliver acoustic energy to the liquid at a first frequency and a first power level for a predetermined first time period, wherein bubble implosion occurs in the first time period; and controlling, based on the timer, the power supply of the transducer to deliver acoustic energy to the liquid at a second frequency and a second power level for a predetermined second time period, wherein the first and second time periods are alternately applied one after another for a predetermined number of cycles, wherein the first and second time periods, the first and second power levels, and the first and second frequencies are determined such that no feature is damaged as a result of delivering the acoustic energy.
A method for the manufacture of a grid structure in a SiC semiconductor material, said method comprising the steps of: a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer of a first conductivity type, b) by epitaxial growth adding at least one layer of doped semiconductor SiC material with a high doping concentration to form separated second regions of a second conductivity type opposite to the first conductivity type on the first layer, if necessary with aid of removing parts of the added semiconductor material to form separated second regions on the first layer; d) by epitaxial growth, growing a second layer of the first conductivity type on the second regions and on the first layer, characterised in that the at least one layer of doped semiconductor SiC material added in step b) has a concentration in the interval 5e19-3e20 cm- 3; in that the method comprises the step of c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b), implanting ions in the first layer to form first regions of a second conductivity type opposite to the first conductivity type, the first regions having a doping concentration in the interval 1e18 - 1e19 cm-3, wherein all of the second regions are in contact with one of the first regions; and in that step d) is performed after step c). a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer of a first conductivity type, b) by epitaxial growth adding at least one layer of doped semiconductor SiC material with a high doping concentration to form separated second regions of a second conductivity type opposite to the first conductivity type on the first layer, if necessary with aid of removing parts of the added semiconductor material to form separated second regions on the first layer; d) by epitaxial growth, growing a second layer of the first conductivity type on the second regions and on the first layer, characterised in that the at least one layer of doped semiconductor SiC material added in step b) has a concentration in the interval 5e19-3e20 cm- 3; in that the method comprises the step of characterised in that the at least one layer of doped semiconductor SiC material added in step b) has a concentration in the interval 5e19-3e20 cm- 3; in that the method comprises the step of c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b), implanting ions in the first layer to form first regions of a second conductivity type opposite to the first conductivity type, the first regions having a doping concentration in the interval 1e18 - 1e19 cm-3, wherein all of the second regions are in contact with one of the first regions; and in that step d) is performed after step c).
A composition comprising: a diblock polymer having a structure in which, in a diblock polymer (A 0) having no ion-conducting group composed of a polymer block (S 0) containing a structural unit derived from an aromatic vinyl compound having a number average molecular weight of not less than 20,000 and an amorphous polymer block containing a structural unit derived from an unsaturated aliphatic hydrocarbon, an ion-conducting group(s) is/are introduced to said polymer block (S 0); a hydrocarbon solvent; an organic solvent having at least one functional group selected from the group consisting of hydroxyl, carbonyl, alkoxycarbonyl, and amide; and a conductive filler. a diblock polymer having a structure in which, in a diblock polymer (A 0) having no ion-conducting group composed of a polymer block (S 0) containing a structural unit derived from an aromatic vinyl compound having a number average molecular weight of not less than 20,000 and an amorphous polymer block containing a structural unit derived from an unsaturated aliphatic hydrocarbon, an ion-conducting group(s) is/are introduced to said polymer block (S 0); a hydrocarbon solvent; an organic solvent having at least one functional group selected from the group consisting of hydroxyl, carbonyl, alkoxycarbonyl, and amide; and a conductive filler.
A microstructure device comprising: a MEMS die device body including: a stress isolation cavity including: a diaphragm a diaphragm void defining a first pressure space, and a topping void and a base void in fluid communication through a channel defining a second pressure space, wherein the first pressure space is in fluid communication with a first pressure port, and the second pressure space is in fluid communication with a second pressure port; and a mounting base, wherein the mounting base is laterally offset from the stress isolation cavity along the MEMS die device body for isolating the diaphragm from packaging stress imparted on the mounting base; and a package housing the MEMS die device body, comprising: a housing and outer cap enclosing the stress isolation cavity, wherein each of the first and second pressure ports of the stress isolation cavity are in fluid communication with a respective pressure opening through the housing, the package is mounted to a lateral edge of the mounting base, and the lateral edge of the mounting base faces away from the stress isolation cavity of the MEMS die device body. a MEMS die device body including: a stress isolation cavity including: a diaphragm a diaphragm void defining a first pressure space, and a topping void and a base void in fluid communication through a channel defining a second pressure space, wherein the first pressure space is in fluid communication with a first pressure port, and the second pressure space is in fluid communication with a second pressure port; and a mounting base, wherein the mounting base is laterally offset from the stress isolation cavity along the MEMS die device body for isolating the diaphragm from packaging stress imparted on the mounting base; and a stress isolation cavity including: a diaphragm a diaphragm void defining a first pressure space, and a topping void and a base void in fluid communication through a channel defining a second pressure space, wherein the first pressure space is in fluid communication with a first pressure port, and the second pressure space is in fluid communication with a second pressure port; and a mounting base, wherein the mounting base is laterally offset from the stress isolation cavity along the MEMS die device body for isolating the diaphragm from packaging stress imparted on the mounting base; and a package housing the MEMS die device body, comprising: a housing and outer cap enclosing the stress isolation cavity, wherein each of the first and second pressure ports of the stress isolation cavity are in fluid communication with a respective pressure opening through the housing, the package is mounted to a lateral edge of the mounting base, and the lateral edge of the mounting base faces away from the stress isolation cavity of the MEMS die device body.
An agricultural baler for compressing harvested material into bales of harvested material, comprising - a pickup for picking up harvested material from a substrate, - a feed auger connected downstream of the pickup for further conveyance of the harvested material which has been picked up, - a cutting rotor connected downstream of the feed auger for comminuting the harvested material which has been picked up prior to compressing it, - a mechanical rotor drive for driving the cutting rotor in rotation, as well as - a compressing means, by means of which the harvested material can be compressed into a bale of harvested material, wherein the pickup cooperates with the rotor drive in a manner such that the pickup can be driven in rotation by means of the rotor drive, wherein a clutch is interposed between the rotor drive and the pickup and can be transposed alternately between an engaged state in which the pickup is coupled to the rotor drive, and a disengaged state, in which the pickup is uncoupled from the rotor drive, characterized in that the feed auger cooperates with a hydraulic motor, by means of which the feed auger can be driven in rotation, wherein the clutch is configured so as to uncouple the pickup from the rotor drive as soon as the baler is transposed into a reverse operation in which the feed auger is driven in rotation in a direction of rotation which is opposite to a normal operation of the baler. - a pickup for picking up harvested material from a substrate, - a feed auger connected downstream of the pickup for further conveyance of the harvested material which has been picked up, - a cutting rotor connected downstream of the feed auger for comminuting the harvested material which has been picked up prior to compressing it, - a mechanical rotor drive for driving the cutting rotor in rotation, as well as - a compressing means, by means of which the harvested material can be compressed into a bale of harvested material, wherein the pickup cooperates with the rotor drive in a manner such that the pickup can be driven in rotation by means of the rotor drive, wherein a clutch is interposed between the rotor drive and the pickup and can be transposed alternately between an engaged state in which the pickup is coupled to the rotor drive, and a disengaged state, in which the pickup is uncoupled from the rotor drive, characterized in that the feed auger cooperates with a hydraulic motor, by means of which the feed auger can be driven in rotation, wherein the clutch is configured so as to uncouple the pickup from the rotor drive as soon as the baler is transposed into a reverse operation in which the feed auger is driven in rotation in a direction of rotation which is opposite to a normal operation of the baler.
A transparent conductive film comprising a compound having a crystalline structure and represented by Chemical Formula 1, wherein the compound represented by Chemical Formula 1 is additionally doped with an n-type dopant, and wherein the n-type dopant comprises at least one selected from the group consisting of Sn, Ge, and Mo: [Chemical Formula 1] [(R p X q)O 3] m n where, R is Sc, Fe, Cu, Ga, Y, In, Er, Tm, Yb, or Lu, X is Al, a content of the X is 50% or less of a content of the R, and A is Mg, Mn, Co, or Zn, m is 1 to 4, n is 1 to 7, and p and q represent an atom content ratio of greater than 0 to 1 or less independently of each other. R is Sc, Fe, Cu, Ga, Y, In, Er, Tm, Yb, or Lu, X is Al, a content of the X is 50% or less of a content of the R, and A is Mg, Mn, Co, or Zn, m is 1 to 4, n is 1 to 7, and p and q represent an atom content ratio of greater than 0 to 1 or less independently of each other.
A method for processing a carbon-containing material to obtain a humus-containing product by exposing it to a mixture of bacteria consisting of the strains Acinetobacter calcoaceticus VKPM V-4883, Pseudomonas denitrificans VKPM V-4884, Pseudomonas sp. "longa" VKPM V-4885 in an amount of 10 9, 10 9 and 10 9 cells per 1 L of solution, respectively, in the presence of a phosphorus-containing additive, under aerobic conditions and while stirring, wherein the carbon-containing material is firstly ground to 0.5 mm in a wet mill while sapropel is simultaneously added in an amount of 5-10 wt %, and grinding is carried out for 30 minutes, the resulting mixture is sent into a mixer, into which aluminium industry waste in the form of dust from the cleaning of carbon electrodes with a particle size up to 0.5 mm in an amount of 10-20 wt % and a phosphorus-containing additive in an amount of 0.2-0.6 wt % are fed, mixing is carried out for 5-10 min, the resulting suspension is sent to a fermenter into which an inoculate has been fed beforehand in the form of a mixture of bacteria in an amount of 200-233 L per 1 m 3 of suspension, and additionally stirring is performed while air is fed from 0.5 to 2.0 m 3 /min at a temperature of 15-20 °C for 28-30 h.
Singulator for rivet elements, having an entrance and an exit for the rivet elements to be separated and having a guide extending along a center line from the entrance to the exit, through which the rivet elements can be delivered along a delivery direction, wherein the singulator has a first blocking element, especially a first pin, and a second blocking element spaced apart from the first blocking element along the center line, especially a second pin, wherein the first blocking element and the second blocking element are movable independently of each other between a blocking position blocking the guide for a rivet element and a releasing position releasing the guide for a rivet element, characterized in that at least one blocking element (8, 9), preferably both blocking elements (8, 9), are arranged such that the direction of movement (B 1, B 2) of the blocking element or elements (8, 9) is oriented at a slant to the delivery direction of the rivet elements.
A method for the vacuum distillation of a liquid, namely of a solvent or a solvent mixture, in particular by means of a rotary evaporator, in which at least one fraction of the liquid is evaporated at a decreasing pressure, characterized in that a vapor temperature correlating with a boiling temperature (Ts) is determined by means of a temperature sensor and a pressure present at the time of the determination of the vapor temperature and correlating with a boiling pressure (ps) is determined by means of a pressure sensor; and a minimal pressure (pmin), which is not fallen below in the distillation, is automatically determined using the determined vapor temperature and the determined pressure, wherein the value pair consisting of the determined vapor temperature and the determined pressure is associated with a stored characteristic line to determine the minimal pressure (pmin), wherein the characteristic line is the course of the boiling point curve of the liquid, wherein the characteristic line results from the equation p = a2 (T/20K)-1, where p is the boiling pressure, T is the boiling temperature [in Kelvin] and a is a material-specific constant, and wherein the characteristic line assigns a pressure, which is determined as the minimal pressure (pmin), to a predefined reference temperature (T ref).
Multi-disk coupling, comprising a first and a second flange (12, 14), which are connected to one another in a torque-transmitting manner by way of a multi-disk, and the multi-disk is connected to the first flange by way of a first fastening means, which is detachably connected to a second fastening means, wherein the second fastening means is connected to the multi-disk by means of a material-bonded connection, characterised in that the multi-disk is embodied to be cutout-free at least in the region of the second fastening means.
A system for visualizing an anatomical target, comprising: an imaging device configured to collect real-time images of an anatomical target; a three-dimensional model generated from pre- or intra-operative images and including images of structures below a surface of the anatomical target not visible in the images from the imaging device; an image processing module configured to generate an overlay registered to the real-time images which displays the structures below the surface of the anatomical target not visible in the images from the imaging device and indicates a depth of the structures below the surface; and a display device configured to concurrently display the real-time images and the overlay. an imaging device configured to collect real-time images of an anatomical target; a three-dimensional model generated from pre- or intra-operative images and including images of structures below a surface of the anatomical target not visible in the images from the imaging device; an image processing module configured to generate an overlay registered to the real-time images which displays the structures below the surface of the anatomical target not visible in the images from the imaging device and indicates a depth of the structures below the surface; and a display device configured to concurrently display the real-time images and the overlay.
A fastening tool, comprising: a nail driving axis; a driver blade configured to drive a nail along the nail driving axis into a workpiece during a nail driving phase; wherein the driver blade has a driver blade axis, characterized in that the driver blade axis is out of alignment with the nail driving axis during a portion of a return phase. a nail driving axis; a driver blade configured to drive a nail along the nail driving axis into a workpiece during a nail driving phase; wherein the driver blade has a driver blade axis, characterized in that the driver blade axis is out of alignment with the nail driving axis during a portion of a return phase.
A washing machine comprising: a cabinet having a washing space disposed therein and a first opening; and a door assembly configured to open and close the first opening, characterised in that the door assembly includes: an inner door having a second opening in communication with the interior of the cabinet; and an outer door having an auxiliary door configured to open and close the second opening, the outer door being rotatably provided in the same direction as the inner door on a front surface of the inner door. a cabinet having a washing space disposed therein and a first opening; and a door assembly configured to open and close the first opening, characterised in that the door assembly includes: an inner door having a second opening in communication with the interior of the cabinet; and an outer door having an auxiliary door configured to open and close the second opening, the outer door being rotatably provided in the same direction as the inner door on a front surface of the inner door. an inner door having a second opening in communication with the interior of the cabinet; and an outer door having an auxiliary door configured to open and close the second opening, the outer door being rotatably provided in the same direction as the inner door on a front surface of the inner door.