An insulated gate bipolar transistor comprising at least following layers from a source electrode on an emitter side to a collector electrode on a collector side opposite to the emitter side: - a source layer of a first conductivity type; - a base layer of a second conductivity type, which is different from the first conductivity type, wherein the source layer and the base layer electrically contact the source electrode; - a drift layer of the first conductivity type; and - a collector layer of the second conductivity type, which is arranged between the drift layer and the collector electrode and which electrically contacts the collector electrode; the insulated gate bipolar transistor further comprising: - at least two trench gate electrodes (7, 7') extending through the base layer into the drift layer, each of the at least two trench gate electrodes (7, 7') comprises an electrically conductive gate layer (70, 70'), which is arranged lateral to the base layer and a gate insulating layer (72, 72'), which separates the gate layer (70, 70') from any doped layer; wherein a channel is formable between the source layer, the base layer and the drift layer and wherein the source layer is arranged at least on one side of each of a trench gate electrode (7, 7'); characterized by - at least one trench Schottky electrode adjacent to one of the at least two trench gate electrodes and comprising an electrically conductive Schottky layer, which is arranged lateral to the base layer and extends through the base layer into the drift layer, wherein the Schottky layer is electrically connected to the source electrode, and a Schottky insulating layer, which separates the Schottky layer from the base layer; and - collection areas of the second conductivity type arranged at a trench gate electrode bottom of the at least two trench gate electrodes (7, 7') and at a trench Schottky electrode bottom of the at least one trench Schottky electrode, wherein the collection areas are located in the drift layer and are laterally separated from each other by the drift layer; wherein the Schottky layer forms a Schottky contact to the collection area at a contact area. - a source layer of a first conductivity type; - a base layer of a second conductivity type, which is different from the first conductivity type, wherein the source layer and the base layer electrically contact the source electrode; - a drift layer of the first conductivity type; and - a collector layer of the second conductivity type, which is arranged between the drift layer and the collector electrode and which electrically contacts the collector electrode; - at least two trench gate electrodes (7, 7') extending through the base layer into the drift layer, each of the at least two trench gate electrodes (7, 7') comprises an electrically conductive gate layer (70, 70'), which is arranged lateral to the base layer and a gate insulating layer (72, 72'), which separates the gate layer (70, 70') from any doped layer; wherein a channel is formable between the source layer, the base layer and the drift layer and wherein the source layer is arranged at least on one side of each of a trench gate electrode (7, 7'); - at least one trench Schottky electrode adjacent to one of the at least two trench gate electrodes and comprising an electrically conductive Schottky layer, which is arranged lateral to the base layer and extends through the base layer into the drift layer, wherein the Schottky layer is electrically connected to the source electrode, and a Schottky insulating layer, which separates the Schottky layer from the base layer; and - collection areas of the second conductivity type arranged at a trench gate electrode bottom of the at least two trench gate electrodes (7, 7') and at a trench Schottky electrode bottom of the at least one trench Schottky electrode, wherein the collection areas are located in the drift layer and are laterally separated from each other by the drift layer; wherein the Schottky layer forms a Schottky contact to the collection area at a contact area.