An RF filter feedthrough assembly for an active implantable medical device comprising a conductive housing, the RF filter feedthrough assembly comprising: a) a conductive ferrule configured for mechanical connection to the conductive housing for an active implantable medical device, the conductive housing serving as an energy dissipating surface; b) an insulator hermetically sealed to the conductive ferrule; c) a feedthrough leadwire hermetically sealed and disposed through the insulator between a body fluid side and a device side of the insulator and in a non-conductive relation with the conductive ferrule; d) at least one capacitor disposed on the device side and configured to be installed inside an electromagnetically shielded and hermetic conductive housing of an active implantable medical device (AIMD), the capacitor comprising: i) a first metallization and a second metallization, wherein the first metallization is connected to at least ten active electrode plates and wherein the second metallization is connected to at least ten ground electrode plates, ii) wherein the at least ten ground electrode plates are interleaved and disposed parallel to the at least ten active electrode plates in a spaced relationship in a dielectric; e) an active electrical connection electrically coupling the first metallization to the feedthrough leadwire; and f) a ground electrical connection electrically coupling the second metallization to the conductive ferrule; and g) wherein the capacitor has: i) a capacitance of between 10 and 20,000 picofarads, and ii) the dielectric of the capacitor has a dielectric constant that is greater than zero up to 200 and a temperature coefficient of capacitance within the range of plus 400 to minus 7112 parts per million per degree centigrade (ppm/°C); and iii) wherein equivalent series resistance is the sum of a dielectric loss plus an ohmic loss, and the capacitor's dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies is less than five percent of the capacitor's ESR, and iv) wherein the capacitor's ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms. a) a conductive ferrule configured for mechanical connection to the conductive housing for an active implantable medical device, the conductive housing serving as an energy dissipating surface; b) an insulator hermetically sealed to the conductive ferrule; c) a feedthrough leadwire hermetically sealed and disposed through the insulator between a body fluid side and a device side of the insulator and in a non-conductive relation with the conductive ferrule; d) at least one capacitor disposed on the device side and configured to be installed inside an electromagnetically shielded and hermetic conductive housing of an active implantable medical device (AIMD), the capacitor comprising: i) a first metallization and a second metallization, wherein the first metallization is connected to at least ten active electrode plates and wherein the second metallization is connected to at least ten ground electrode plates, ii) wherein the at least ten ground electrode plates are interleaved and disposed parallel to the at least ten active electrode plates in a spaced relationship in a dielectric; i) a first metallization and a second metallization, wherein the first metallization is connected to at least ten active electrode plates and wherein the second metallization is connected to at least ten ground electrode plates, ii) wherein the at least ten ground electrode plates are interleaved and disposed parallel to the at least ten active electrode plates in a spaced relationship in a dielectric; e) an active electrical connection electrically coupling the first metallization to the feedthrough leadwire; and f) a ground electrical connection electrically coupling the second metallization to the conductive ferrule; and g) wherein the capacitor has: i) a capacitance of between 10 and 20,000 picofarads, and ii) the dielectric of the capacitor has a dielectric constant that is greater than zero up to 200 and a temperature coefficient of capacitance within the range of plus 400 to minus 7112 parts per million per degree centigrade (ppm/°C); and iii) wherein equivalent series resistance is the sum of a dielectric loss plus an ohmic loss, and the capacitor's dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies is less than five percent of the capacitor's ESR, and iv) wherein the capacitor's ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms. i) a capacitance of between 10 and 20,000 picofarads, and ii) the dielectric of the capacitor has a dielectric constant that is greater than zero up to 200 and a temperature coefficient of capacitance within the range of plus 400 to minus 7112 parts per million per degree centigrade (ppm/°C); and iii) wherein equivalent series resistance is the sum of a dielectric loss plus an ohmic loss, and the capacitor's dielectric loss tangent measured in ohms at an MRI RF pulsed frequency or range of frequencies is less than five percent of the capacitor's ESR, and iv) wherein the capacitor's ESR at the MRI RF pulsed frequency or range of frequencies is less than 2.0 ohms.