A microchip laser (200; 500), comprising: a microchip laser base (210; 510) comprising a gain region (212; 512) and a passive Q-switch region (214; 514); a solid etalon (220; 520) coupled to the microchip laser base (210; 510); and an interfacial coating (230; 530) disposed between the microchip laser base (210; 510) and the solid etalon (220; 520); wherein the microchip laser base (210; 510) and the solid etalon (220; 520) are comprised of a same host material; wherein the microchip laser base (210; 510), the solid etalon, and the interfacial coating are bonded together without an adhesive; wherein the microchip laser base (210; 510) and the solid etalon (220; 520) form a laser cavity, thicknesses of the microchip laser base (210; 510) and the solid etalon (220; 520) being selected such that an emitted longitudinal mode of the laser cavity is at or near a peak reflectance of the solid etalon (220; 520); and wherein either: an emitting outer surface (222; 522) of the solid etalon is an uncoated outer surface, and the interfacial coating (230; 530) has a reflectance that matches a Fresnel reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520); or the emitting outer surface (222, 522) of the solid etalon (220; 520) has a surface coating, and the reflectance of the interfacial coating (230; 530) matches a reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520). a microchip laser base (210; 510) comprising a gain region (212; 512) and a passive Q-switch region (214; 514); a solid etalon (220; 520) coupled to the microchip laser base (210; 510); and an interfacial coating (230; 530) disposed between the microchip laser base (210; 510) and the solid etalon (220; 520); wherein the microchip laser base (210; 510) and the solid etalon (220; 520) are comprised of a same host material; wherein the microchip laser base (210; 510), the solid etalon, and the interfacial coating are bonded together without an adhesive; wherein the microchip laser base (210; 510) and the solid etalon (220; 520) form a laser cavity, thicknesses of the microchip laser base (210; 510) and the solid etalon (220; 520) being selected such that an emitted longitudinal mode of the laser cavity is at or near a peak reflectance of the solid etalon (220; 520); and wherein either: an emitting outer surface (222; 522) of the solid etalon is an uncoated outer surface, and the interfacial coating (230; 530) has a reflectance that matches a Fresnel reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520); or the emitting outer surface (222, 522) of the solid etalon (220; 520) has a surface coating, and the reflectance of the interfacial coating (230; 530) matches a reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520). an emitting outer surface (222; 522) of the solid etalon is an uncoated outer surface, and the interfacial coating (230; 530) has a reflectance that matches a Fresnel reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520); or the emitting outer surface (222, 522) of the solid etalon (220; 520) has a surface coating, and the reflectance of the interfacial coating (230; 530) matches a reflectance of the emitting outer surface (222; 522) of the solid etalon (220; 520).