A semiconductor apparatus comprising: a semiconductor chip including a power semiconductor device; a first base material made of an electrically conductive material connected to a part of a lower surface of said semiconductor chip; a heat conducting member being in contact with a part of an upper surface of said semiconductor chip; an encapsulating material for encapsulating said semiconductor chip and said heat conducting member, wherein a part of said first base material is extruded outside said encapsulating material and is adapted to work as a first external connection terminal; and wherein said power semiconductor device is constructed by using a wide band gap semiconductor, and in that said semiconductor apparatus further comprises: a second base material made of a metal material and disposed on a part of said upper surface of said semiconductor chip, wherein a part of said second base material is extruded outside said encapsulating material and is adapted to work as a second external connection terminal; characterized by a first intermediate member made of an electrically conductive material and a second intermediate member made of a material having lower heat conductivity than said first intermediate member, wherein the first intermediate member and the second intermediate member are provided between said first base material and the lower surface of said semiconductor chip, wherein the first intermediate member contacts the lower surface of the semiconductor chip and the first base material, wherein the second intermediate member contacts the lower surface of the semiconductor chip and the first base material, wherein an area where the second intermediate member contacts the lower surface of the semiconductor chip is larger than an area where the first intermediate member contacts the lower surface of the semiconductor chip, and wherein said encapsulating material further encapsulates the first intermediate member and the second intermediate member. a semiconductor chip including a power semiconductor device; a first base material made of an electrically conductive material connected to a part of a lower surface of said semiconductor chip; a heat conducting member being in contact with a part of an upper surface of said semiconductor chip; an encapsulating material for encapsulating said semiconductor chip and said heat conducting member, wherein a part of said first base material is extruded outside said encapsulating material and is adapted to work as a first external connection terminal; and wherein said power semiconductor device is constructed by using a wide band gap semiconductor, and in that said semiconductor apparatus further comprises: a second base material made of a metal material and disposed on a part of said upper surface of said semiconductor chip, wherein a part of said second base material is extruded outside said encapsulating material and is adapted to work as a second external connection terminal; a second base material made of a metal material and disposed on a part of said upper surface of said semiconductor chip, wherein a part of said second base material is extruded outside said encapsulating material and is adapted to work as a second external connection terminal; characterized by a first intermediate member made of an electrically conductive material and a second intermediate member made of a material having lower heat conductivity than said first intermediate member, wherein the first intermediate member and the second intermediate member are provided between said first base material and the lower surface of said semiconductor chip, wherein the first intermediate member contacts the lower surface of the semiconductor chip and the first base material, wherein the second intermediate member contacts the lower surface of the semiconductor chip and the first base material, wherein an area where the second intermediate member contacts the lower surface of the semiconductor chip is larger than an area where the first intermediate member contacts the lower surface of the semiconductor chip, and wherein said encapsulating material further encapsulates the first intermediate member and the second intermediate member.