An isolated gate drive circuit (1000-1003, 1006-1012, 1000a) to drive a semiconductor switching device, the gate drive circuit (1000-1003, 1006-1012, 1000a) comprising: a modulation circuit (30, 30a) that is configured to generate a first modulated signal by modulating a first radio-frequency wave in accordance with a first input signal, and a second modulated signal by modulating the first radio-frequency wave in accordance with a second input signal different from the first input signal; an isolated transmission unit configured of a plurality of electromagnetic resonance couplers (20, 20a, 20b, 20c), including a first electromagnetic resonance coupler that is configured to isolatedly transmit the first modulated signal, and a second electromagnetic resonance coupler that is configured to isolatedly transmit the second modulated signal; a first rectifier circuit that is configured to generate a first signal by rectifying the first modulated signal isolatedly transmitted from the first electromagnetic resonance coupler; a second rectifier circuit that is configured to generate a second signal by rectifying the second modulated signal isolatedly transmitted from the second electromagnetic resonance coupler; characterized in that the gate drive circuit further comprises a third rectifier circuit that is configured to generate charging voltage by rectifying a second radio-frequency wave isolatedly transmitted by one of the plurality of electromagnetic resonance couplers (20, 20a, 20b, 20c); a capacitor that is configured to be charged in accordance with the charging voltage; and an output circuit (60, 60a) which is configured to select whether or not to supply a charge charged in the capacitor to a gate terminal of the semiconductor switching device, in accordance with the first signal and the second signal, wherein the output circuit (60, 60a) includes a first switching device having a gate and that is configured to supply a charge, charged in the capacitor, to the gate terminal of the semiconductor switching device in accordance with the first signal, and a second switching device having a gate and that is configured to extract a charge from the gate terminal of the semiconductor switching device in accordance with the second signal, wherein the gate of the first switching device is not connected to the gate of the second switching device. a modulation circuit (30, 30a) that is configured to generate a first modulated signal by modulating a first radio-frequency wave in accordance with a first input signal, and a second modulated signal by modulating the first radio-frequency wave in accordance with a second input signal different from the first input signal; an isolated transmission unit configured of a plurality of electromagnetic resonance couplers (20, 20a, 20b, 20c), including a first electromagnetic resonance coupler that is configured to isolatedly transmit the first modulated signal, and a second electromagnetic resonance coupler that is configured to isolatedly transmit the second modulated signal; a first electromagnetic resonance coupler that is configured to isolatedly transmit the first modulated signal, and a second electromagnetic resonance coupler that is configured to isolatedly transmit the second modulated signal; a first rectifier circuit that is configured to generate a first signal by rectifying the first modulated signal isolatedly transmitted from the first electromagnetic resonance coupler; a second rectifier circuit that is configured to generate a second signal by rectifying the second modulated signal isolatedly transmitted from the second electromagnetic resonance coupler; characterized in that the gate drive circuit further comprises a third rectifier circuit that is configured to generate charging voltage by rectifying a second radio-frequency wave isolatedly transmitted by one of the plurality of electromagnetic resonance couplers (20, 20a, 20b, 20c); a capacitor that is configured to be charged in accordance with the charging voltage; and an output circuit (60, 60a) which is configured to select whether or not to supply a charge charged in the capacitor to a gate terminal of the semiconductor switching device, in accordance with the first signal and the second signal, wherein the output circuit (60, 60a) includes a first switching device having a gate and that is configured to supply a charge, charged in the capacitor, to the gate terminal of the semiconductor switching device in accordance with the first signal, and a second switching device having a gate and that is configured to extract a charge from the gate terminal of the semiconductor switching device in accordance with the second signal, a first switching device having a gate and that is configured to supply a charge, charged in the capacitor, to the gate terminal of the semiconductor switching device in accordance with the first signal, and a second switching device having a gate and that is configured to extract a charge from the gate terminal of the semiconductor switching device in accordance with the second signal, wherein the gate of the first switching device is not connected to the gate of the second switching device.