A semiconductor device comprising: a plurality of power units (12, 14) placed in a second direction and parallel to each other, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements (16, 18, 20, 22) placed on a metal plate (24, 36), the semiconductor elements (16, 18, 20, 22) of each of the power units (12, 14) having predetermined gaps (S1, S2) with each other, wherein two of the power units, before being sealed with resin, have a passage therebetween configured to let injected resin flowing through during manufacturing, wherein the semiconductor elements (16, 18, 20, 22) of each of the two power units include a near-sided semiconductor element (16, 20) and a far-sided semiconductor element (18, 22), wherein the near-sided semiconductor element (16, 20) is in a first direction closer to an inlet of the resin among the two semiconductor elements having the predetermined gaps (S1, S2) therebetween and wherein the near-sided semiconductor elements (16, 20) of the two power units contain end parts on a side opposite to another side which is closer to the inlet of the resin, characterized in that a structure is positioned in the passage downstream in a resin flow direction relative to the end parts of the near-sided semiconductor elements (16, 20) such that the structure prevents the resin from flowing downstream in a resin flow direction, and in that the far-sided semiconductor element (18, 22) of each of the two power units is a semiconductor element positioned on a far side which is further away from the inlet than the near-sided semiconductor element (16, 20), and projecting from the end part of the near-sided semiconductor element (16, 20) in the second direction. a plurality of power units (12, 14) placed in a second direction and parallel to each other, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements (16, 18, 20, 22) placed on a metal plate (24, 36), the semiconductor elements (16, 18, 20, 22) of each of the power units (12, 14) having predetermined gaps (S1, S2) with each other, wherein two of the power units, before being sealed with resin, have a passage therebetween configured to let injected resin flowing through during manufacturing, wherein the semiconductor elements (16, 18, 20, 22) of each of the two power units include a near-sided semiconductor element (16, 20) and a far-sided semiconductor element (18, 22), wherein the near-sided semiconductor element (16, 20) is in a first direction closer to an inlet of the resin among the two semiconductor elements having the predetermined gaps (S1, S2) therebetween and wherein the near-sided semiconductor elements (16, 20) of the two power units contain end parts on a side opposite to another side which is closer to the inlet of the resin, characterized in that a structure is positioned in the passage downstream in a resin flow direction relative to the end parts of the near-sided semiconductor elements (16, 20) such that the structure prevents the resin from flowing downstream in a resin flow direction, and in that the far-sided semiconductor element (18, 22) of each of the two power units is a semiconductor element positioned on a far side which is further away from the inlet than the near-sided semiconductor element (16, 20), and projecting from the end part of the near-sided semiconductor element (16, 20) in the second direction.