A power converter comprising: a first semiconductor switching device (134, 34, 35, 36) having a positive electrode, a negative electrode, and a control electrode to which a drive voltage with respect to the negative electrode as a reference is applied; a drive power supply having a positive terminal and a negative terminal and configured to supply, to the control electrode, drive current to turn on the first semiconductor switching device; a drive circuit (138, 38) connected to the positive terminal of the drive power supply, the negative terminal of the drive power supply, the negative electrode of the first semiconductor switching device, and the control electrode of the first semiconductor switching device, and configured to output the drive voltage to the control electrode of the first semiconductor switching device; and an impedance element (11, 21) disposed in a closed circuit through which the drive current flows and causing an inductance of the closed circuit to increase, the closed circuit including the positive terminal of the drive power supply, the control electrode of the first semiconductor switching device, the negative electrode of the first semiconductor switching device, and the negative terminal of the drive power supply, characterised in that the impedance element (11,21) is adapted to change a resonance frequency of a resonance circuit toward a low frequency side, the resonance circuit including the inductance of the closed circuit and a parasitic capacitance between the control electrode and the negative electrode of the first semiconductor switching device, wherein the impedance element (11,21) has a characteristic that a resistance component increases with increase of a frequency. a first semiconductor switching device (134, 34, 35, 36) having a positive electrode, a negative electrode, and a control electrode to which a drive voltage with respect to the negative electrode as a reference is applied; a drive power supply having a positive terminal and a negative terminal and configured to supply, to the control electrode, drive current to turn on the first semiconductor switching device; a drive circuit (138, 38) connected to the positive terminal of the drive power supply, the negative terminal of the drive power supply, the negative electrode of the first semiconductor switching device, and the control electrode of the first semiconductor switching device, and configured to output the drive voltage to the control electrode of the first semiconductor switching device; and an impedance element (11, 21) disposed in a closed circuit through which the drive current flows and causing an inductance of the closed circuit to increase, the closed circuit including the positive terminal of the drive power supply, the control electrode of the first semiconductor switching device, the negative electrode of the first semiconductor switching device, and the negative terminal of the drive power supply, characterised in that the impedance element (11,21) is adapted to change a resonance frequency of a resonance circuit toward a low frequency side, the resonance circuit including the inductance of the closed circuit and a parasitic capacitance between the control electrode and the negative electrode of the first semiconductor switching device, wherein the impedance element (11,21) has a characteristic that a resistance component increases with increase of a frequency.