Method for manufacturing an electronic device comprising at least: • providing a substrate; • providing an area on the substrate which has to be protected against moisture and/or oxygen; • providing first conductive lines; • providing at least one contact (5, 6); • providing an encapsulation layer system comprising at least a first inorganic layer which is the first inorganic layer of the encapsulation system applied when forming the encapsulation system, the encapsulation system at least sealing the area to be protected against moisture and/or oxygen; the at least one contact (5, 6) extending from the said sealed area to a part of the substrate not sealed by the encapsulation layer system, the contact (5,6) having a MoCr, Al, MoCr layer structure which makes it difficult to obtain a perfect seal via the encapsulation layer system, characterized in that • the at least one contact includes a bottom layer of the same material as the first conductive lines and on top of that a conductive layer structure that consists of said MoCr / Al / MoCr layer structure; • the at least one contact (5, 6) comprising a shunt, i.e. an interruption which interruption is bridged by a electrically conductive bridge (21; 21-22; 21-23); • the first inorganic layer of the encapsulation system being applied so that it is in direct physical contact with the electrically conductive bridge (21; 21-22; 21-23); • the bridge (21; 21-22; 21-23) having a structure and shape which can be sealingly covered by the encapsulation layer system and is made from a material through which no moisture and/or oxygen can penetrate; and • forming the shunt with the bridge (21; 21-22; 21-23) by removing or not applying at least one of the upper layers of the MoCr / Al / MoCr layer structure (22- 24; 23, 24; or 24) of the contact (5, 6) in an area forming the shunt. • providing a substrate; • providing an area on the substrate which has to be protected against moisture and/or oxygen; • providing first conductive lines; • providing at least one contact (5, 6); • providing an encapsulation layer system comprising at least a first inorganic layer which is the first inorganic layer of the encapsulation system applied when forming the encapsulation system, the encapsulation system at least sealing the area to be protected against moisture and/or oxygen; • the at least one contact includes a bottom layer of the same material as the first conductive lines and on top of that a conductive layer structure that consists of said MoCr / Al / MoCr layer structure; • the at least one contact (5, 6) comprising a shunt, i.e. an interruption which interruption is bridged by a electrically conductive bridge (21; 21-22; 21-23); • the first inorganic layer of the encapsulation system being applied so that it is in direct physical contact with the electrically conductive bridge (21; 21-22; 21-23); • the bridge (21; 21-22; 21-23) having a structure and shape which can be sealingly covered by the encapsulation layer system and is made from a material through which no moisture and/or oxygen can penetrate; and • forming the shunt with the bridge (21; 21-22; 21-23) by removing or not applying at least one of the upper layers of the MoCr / Al / MoCr layer structure (22- 24; 23, 24; or 24) of the contact (5, 6) in an area forming the shunt.