A memory cell (200, 300, 400), comprising: a plurality of magnetic tunnel junction, MTJ, layers (210, 310, 410), the plurality of MTJ layers including a fixed layer, a free layer and a barrier layer (207, 208, 209, 307, 308, 309, 407, 408, 409) between the fixed layer and the free layer; a first electrode (206, 306, 406) coupled to a first one of the plurality of MTJ layers, the first electrode including a first elongated portion (205, 305, 405) extending laterally away from the plurality of MTJ layers; a first conductive layer (202, 302, 402) and a first contact via (204, 304, 404) coupled to the first elongated portion of the first electrode, a lateral displacement between the first elongated portion and the plurality of MTJ layers configured to direct a first portion of a magnetic field induced by an MTJ switching current through the plurality of MTJ layers; a second electrode (212, 312, 412) coupled to a second one of the plurality of MTJ layers, the second electrode including a second elongated portion (211, 311, 411) extending laterally away from the plurality of MTJ layers; and a second conductive layer (216, 316, 416) and a second contact via (214, 314, 414) coupled to the second elongated portion of the second electrode, a lateral displacement between the second elongated portion and the plurality of MTJ layers configured to direct a second portion of the magnetic field induced by the MTJ switching current through the plurality of MTJ layers, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the plurality of MTJ layers; characterised in that the plurality of MTJ layers define an easy axis, and wherein the first elongated portion and the second elongated portion are configured to induce the magnetic field perpendicular to the easy axis of the plurality of MTJ layers. a plurality of magnetic tunnel junction, MTJ, layers (210, 310, 410), the plurality of MTJ layers including a fixed layer, a free layer and a barrier layer (207, 208, 209, 307, 308, 309, 407, 408, 409) between the fixed layer and the free layer; a first electrode (206, 306, 406) coupled to a first one of the plurality of MTJ layers, the first electrode including a first elongated portion (205, 305, 405) extending laterally away from the plurality of MTJ layers; a first conductive layer (202, 302, 402) and a first contact via (204, 304, 404) coupled to the first elongated portion of the first electrode, a lateral displacement between the first elongated portion and the plurality of MTJ layers configured to direct a first portion of a magnetic field induced by an MTJ switching current through the plurality of MTJ layers; a second electrode (212, 312, 412) coupled to a second one of the plurality of MTJ layers, the second electrode including a second elongated portion (211, 311, 411) extending laterally away from the plurality of MTJ layers; and a second conductive layer (216, 316, 416) and a second contact via (214, 314, 414) coupled to the second elongated portion of the second electrode, a lateral displacement between the second elongated portion and the plurality of MTJ layers configured to direct a second portion of the magnetic field induced by the MTJ switching current through the plurality of MTJ layers, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the plurality of MTJ layers; characterised in that the plurality of MTJ layers define an easy axis, and wherein the first elongated portion and the second elongated portion are configured to induce the magnetic field perpendicular to the easy axis of the plurality of MTJ layers.