A power switching device, comprising: a first wide band-gap MISFET (210, 310) having a first gate electrode (212, 312), a drain region (214, 314) and a source region (216, 316); a second wide band-gap MISFET (220, 320) having a second gate electrode (222, 322), a drain region (224, 324) and a source region (226, 326); and a wide band-gap bipolar junction transistor ("BJT") (230, 330) having a base (232, 332), a collector (234, 334) and an emitter (236, 336); wherein the first gate electrode (212, 312) of the first wide band-gap MISFET (210, 310) is electrically connected to the second gate electrode (222, 322) of the second wide band-gap MISFET (220, 320); wherein the drain region (214, 314) of the first wide band-gap MISFET (210, 310) is electrically connected to the drain region (224, 324) of the second wide band-gap MISFET (220, 320) and to the collector (234, 334); wherein the source region (216, 316) of the first wide band-gap MISFET (210, 310) is electrically connected to the emitter (236, 336); and wherein the source region (226, 326) of the second wide band-gap MISFET (220, 320) is electrically connected to the base (232, 332), wherein the first and second gate electrodes (212, 312, 222, 322) of the respective first (210, 310) and second (220, 320) wide band-gap MISFETs, the source region (216, 316) of the first wide band-gap MISFET (210, 310), the source region (226, 326) of the second wide band-gap MISFET (220, 320), the emitter (236, 336) of the wide band-gap BJT (230, 330) and a contact (242, 342) for the emitter (236, 336) of the wide band-gap BJT (230, 330) are on a first side of the power switching device, wherein a contact (244, 344) for the collector (234, 334) of the wide band-gap BJT (230, 330), for the drain region (214, 314) of the first wide band-gap MISFET (210, 310) and for the drain region (224, 324) of the second wide band-gap MISFET (220, 320) is on a second side of the power switching device that is opposite the first side of the device. a first wide band-gap MISFET (210, 310) having a first gate electrode (212, 312), a drain region (214, 314) and a source region (216, 316); a second wide band-gap MISFET (220, 320) having a second gate electrode (222, 322), a drain region (224, 324) and a source region (226, 326); and a wide band-gap bipolar junction transistor ("BJT") (230, 330) having a base (232, 332), a collector (234, 334) and an emitter (236, 336); wherein the first gate electrode (212, 312) of the first wide band-gap MISFET (210, 310) is electrically connected to the second gate electrode (222, 322) of the second wide band-gap MISFET (220, 320); wherein the drain region (214, 314) of the first wide band-gap MISFET (210, 310) is electrically connected to the drain region (224, 324) of the second wide band-gap MISFET (220, 320) and to the collector (234, 334); wherein the source region (216, 316) of the first wide band-gap MISFET (210, 310) is electrically connected to the emitter (236, 336); and wherein the source region (226, 326) of the second wide band-gap MISFET (220, 320) is electrically connected to the base (232, 332), wherein the first and second gate electrodes (212, 312, 222, 322) of the respective first (210, 310) and second (220, 320) wide band-gap MISFETs, the source region (216, 316) of the first wide band-gap MISFET (210, 310), the source region (226, 326) of the second wide band-gap MISFET (220, 320), the emitter (236, 336) of the wide band-gap BJT (230, 330) and a contact (242, 342) for the emitter (236, 336) of the wide band-gap BJT (230, 330) are on a first side of the power switching device, wherein a contact (244, 344) for the collector (234, 334) of the wide band-gap BJT (230, 330), for the drain region (214, 314) of the first wide band-gap MISFET (210, 310) and for the drain region (224, 324) of the second wide band-gap MISFET (220, 320) is on a second side of the power switching device that is opposite the first side of the device.