A detection apparatus configured to detect soft X-ray radiation, comprising: a semiconductor substrate including a conversion unit and a circuit unit; and a shielding unit configured to reduce an amount of soft X-ray radiation incident on the semiconductor substrate; wherein the conversion unit has a plurality of conversion elements disposed therein, and the conversion elements convert the soft X-ray radiation incident on the semiconductor substrate into electric charge, wherein the circuit unit has a plurality of amplifier transistors disposed therein, and the amplifier transistors output a signal on the basis of electric charge generated by the conversion elements, wherein the shielding unit is disposed above gate electrodes of the amplifier transistors, the shielding unit is disposed on the same side of the substrate as the gate electrodes; and wherein the shielding unit is disposed so that a projection of at least a first part of the shielding unit onto the semiconductor substrate overlaps the circuit unit; wherein the shielding unit is disposed so that a projection of second part of the shielding unit onto the semiconductor substrate overlaps the conversion unit; characterized in that the second part of the shielding unit is disposed so as to overlap a first region of the conversion unit within a predetermined distance from a boundary between the conversion unit and the circuit unit, and the shielding unit does not overlap a second region of the conversion unit excluding the first region, and the predetermined distance is in a range from 0.1 micrometer to 2.0 micrometer, or the predetermined distance is greater than a radius of the smallest sphere that encloses a region in which electric charge is generated when a photon of the soft X-ray is incident on the semiconductor substrate, or, when L denotes the predetermined distance in micrometer, the predetermined distance L is set to a value defined by the following equation: L = 0.85 × E 7 4 × 10 − 2 where E denotes an energy in keV of the soft X-ray incident on the semiconductor substrate. a semiconductor substrate including a conversion unit and a circuit unit; and a shielding unit configured to reduce an amount of soft X-ray radiation incident on the semiconductor substrate; wherein the conversion unit has a plurality of conversion elements disposed therein, and the conversion elements convert the soft X-ray radiation incident on the semiconductor substrate into electric charge, wherein the circuit unit has a plurality of amplifier transistors disposed therein, and the amplifier transistors output a signal on the basis of electric charge generated by the conversion elements, wherein the shielding unit is disposed above gate electrodes of the amplifier transistors, the shielding unit is disposed on the same side of the substrate as the gate electrodes; and wherein the shielding unit is disposed so that a projection of at least a first part of the shielding unit onto the semiconductor substrate overlaps the circuit unit; wherein the shielding unit is disposed so that a projection of second part of the shielding unit onto the semiconductor substrate overlaps the conversion unit; characterized in that the second part of the shielding unit is disposed so as to overlap a first region of the conversion unit within a predetermined distance from a boundary between the conversion unit and the circuit unit, and the shielding unit does not overlap a second region of the conversion unit excluding the first region, and the predetermined distance is in a range from 0.1 micrometer to 2.0 micrometer, or the predetermined distance is greater than a radius of the smallest sphere that encloses a region in which electric charge is generated when a photon of the soft X-ray is incident on the semiconductor substrate, or, when L denotes the predetermined distance in micrometer, the predetermined distance L is set to a value defined by the following equation: L = 0.85 × E 7 4 × 10 − 2 where E denotes an energy in keV of the soft X-ray incident on the semiconductor substrate.