A method for plasma processing a substrate using an apparatus comprising: a power supply; at least one plasma generating unit including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning the substrate with a first side of the substrate proximate the PGU; and at least one gas inlet and at least one exhaust port configured to provide a gas flow between the first electrode and the second electrode and between the first electrode and the substrate; wherein each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode; wherein the first electrode and the second electrode are positioned relative to one another such that the minimum distance between the first electrode and the second electrode is less than the width of the first electrode, and wherein the first electrode is positioned such that the minimum distance from the first electrode to the substrate is less than the width of the first electrode, wherein a first gas is injected into a first gap between the electrodes, wherein the first gap comprises a first plasma for dissociating the first gas into dissociated reactive gas species, and wherein a second gas is injected from a first side of an electrode facing the other electrode into the first plasma that the second gas reacts with the dissociated reactive gas species, wherein the second gas selected from the group consisting of silane or an other gas containing silicon; for deposition of silicon oxide or silicon nitride. a power supply; at least one plasma generating unit including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning the substrate with a first side of the substrate proximate the PGU; and at least one gas inlet and at least one exhaust port configured to provide a gas flow between the first electrode and the second electrode and between the first electrode and the substrate; wherein each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode; wherein the first electrode and the second electrode are positioned relative to one another such that the minimum distance between the first electrode and the second electrode is less than the width of the first electrode, and wherein the first electrode is positioned such that the minimum distance from the first electrode to the substrate is less than the width of the first electrode, wherein a first gas is injected into a first gap between the electrodes, wherein the first gap comprises a first plasma for dissociating the first gas into dissociated reactive gas species, and wherein a second gas is injected from a first side of an electrode facing the other electrode into the first plasma that the second gas reacts with the dissociated reactive gas species, wherein the second gas selected from the group consisting of silane or an other gas containing silicon; for deposition of silicon oxide or silicon nitride.