mhurhangee/ep-ind-claims huggingface dataset:
A surface acoustic wave device comprising: a piezoelectric substrate, a plurality of IDT electrodes formed on the piezoelectric substrate, a plurality of pad electrodes formed on the piezoelectric substrate and electrically connected to the plurality of IDT electrodes, a support layer, formed on the piezoelectric substrate over the plurality of pad electrodes and made of an insulating material, having an opening opened to and surrounding the plurality of IDT electrodes, the outline edge of the support layer being arranged inside the outline edge of the top surface of the piezoelectric substrate, a cover, made of an insulating material, formed on the support layer to close the opening, and the outline edge thereof being aligned with the outline edge of the piezoelectric substrate, an electrically conductive connection member (17,18) electrically connected to the plurality of pad electrodes, penetrating through the support layer and the cover, and extending to the top surface of the cover, a plurality of wiring lines extending on the piezoelectric substrate from the outline edge of the piezoelectric substrate to the respective ones of the plurality of pad electrodes, and a coating layer made of an insulating material and coating the portion of the wiring lines not covered with the support layer. a piezoelectric substrate, a plurality of IDT electrodes formed on the piezoelectric substrate, a plurality of pad electrodes formed on the piezoelectric substrate and electrically connected to the plurality of IDT electrodes, a support layer, formed on the piezoelectric substrate over the plurality of pad electrodes and made of an insulating material, having an opening opened to and surrounding the plurality of IDT electrodes, the outline edge of the support layer being arranged inside the outline edge of the top surface of the piezoelectric substrate, a cover, made of an insulating material, formed on the support layer to close the opening, and the outline edge thereof being aligned with the outline edge of the piezoelectric substrate, an electrically conductive connection member (17,18) electrically connected to the plurality of pad electrodes, penetrating through the support layer and the cover, and extending to the top surface of the cover, a plurality of wiring lines extending on the piezoelectric substrate from the outline edge of the piezoelectric substrate to the respective ones of the plurality of pad electrodes, and a coating layer made of an insulating material and coating the portion of the wiring lines not covered with the support layer.
A semiconductor device comprising: a substrate made of silicon carbide; a gate insulating film formed on a surface of said substrate; a gate electrode formed on said gate insulating film; an interlayer insulating film formed on said gate insulating film to surround said gate electrode; a buffer film containing Ti and N and containing no Al; a source electrode containing Ti, Al, and Si; a source region including said surface of said substrate, and having a first conductivity type; and a contact region including said surface of said substrate, and having a second conductivity type, said buffer film being formed on and in contact with a side wall surface of a contact hole, which is formed by said interlayer insulating film and said gate insulating film, said source electrode being formed to extend from said surface of said substrate to the upper surface of said interlayer insulating film, said source electrode being stacked on said buffer film on said side wall surface, and being in contact with said source region and said contact region on said surface of said substrate. a substrate made of silicon carbide; a gate insulating film formed on a surface of said substrate; a gate electrode formed on said gate insulating film; an interlayer insulating film formed on said gate insulating film to surround said gate electrode; a buffer film containing Ti and N and containing no Al; a source electrode containing Ti, Al, and Si; a source region including said surface of said substrate, and having a first conductivity type; and a contact region including said surface of said substrate, and having a second conductivity type, said buffer film being formed on and in contact with a side wall surface of a contact hole, which is formed by said interlayer insulating film and said gate insulating film, said source electrode being formed to extend from said surface of said substrate to the upper surface of said interlayer insulating film, said source electrode being stacked on said buffer film on said side wall surface, and being in contact with said source region and said contact region on said surface of said substrate.
An additive manufacturing system, comprising: an extruder having an opening dimensioned to receive a material, a barrel, and a screw within the barrel, wherein the screw has a diameter ranging between 20 mm +/- 10% and 150 mm +/- 10%, and wherein the barrel extends along a longitudinal axis; one or more heaters positioned along at least a portion of the barrel, wherein, as the material passes through the barrel, the one or more heaters at least partially melt the material; a gear pump in fluid communication with the barrel for receiving the at least partially melted material; a nozzle in fluid communication with the gear pump for depositing the at least partially melted material as a vertically oriented layer of material; a worktable for printing of a part; characterized in that the worktable is a vertical worktable for vertical printing of the part and the additive manufacturing system further comprises one or more cooling mechanisms including one or more fans, blowers, coolant, or air conditioning, configured to cool vertically oriented layers of the at least partially melted material on the vertical worktable in a layer by layer manner. an extruder having an opening dimensioned to receive a material, a barrel, and a screw within the barrel, wherein the screw has a diameter ranging between 20 mm +/- 10% and 150 mm +/- 10%, and wherein the barrel extends along a longitudinal axis; one or more heaters positioned along at least a portion of the barrel, wherein, as the material passes through the barrel, the one or more heaters at least partially melt the material; a gear pump in fluid communication with the barrel for receiving the at least partially melted material; a nozzle in fluid communication with the gear pump for depositing the at least partially melted material as a vertically oriented layer of material; a worktable for printing of a part; characterized in that the worktable is a vertical worktable for vertical printing of the part and the additive manufacturing system further comprises one or more cooling mechanisms including one or more fans, blowers, coolant, or air conditioning, configured to cool vertically oriented layers of the at least partially melted material on the vertical worktable in a layer by layer manner.
A system for setting the speed of a vehicle to a maximum permissible speed, comprising a limiting device that, by means of engine intervention, limits the attainable speed of the vehicle to a maximum value, and comprising an information device that, when the maximum permissible speed is modified during driving, induces the limiting device to limit the vehicle speed to a modified maximum value, wherein the information device - is a device for identifying the type of road currently being driven upon, - reads the maximum permissible speed associated with the type of road currently being driven upon out of a memory device and considers this maximum permissible speed as a modified maximum value, and - establishes a maximum permissible speed as a function of both the type of road currently being driven upon and an area currently being driven in, and - is provided with a wireless receiving unit which receives an area signal transmitted by an external transmitting unit in order to identify the area currently being driven in, characterized in that the wireless receiving unit is a mobile radio unit and the area signal is a country code. - is a device for identifying the type of road currently being driven upon, - reads the maximum permissible speed associated with the type of road currently being driven upon out of a memory device and considers this maximum permissible speed as a modified maximum value, and - establishes a maximum permissible speed as a function of both the type of road currently being driven upon and an area currently being driven in, and - is provided with a wireless receiving unit which receives an area signal transmitted by an external transmitting unit in order to identify the area currently being driven in,
A gas sensor on a semiconductor substrate, the gas sensor comprising: an elongate sensor element extending across an opening in said substrate and having first and second opposed surfaces (47, 45) exposed for contact with a gas to be sensed, wherein the first surface faces away from a major surface of the substrate, wherein the second surface faces toward said major surface, and wherein the electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable; and a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening, wherein the support structure comprises at least one elongate strut that extends across the opening and that is attached to the sensor element at intervals along the sensor element. an elongate sensor element extending across an opening in said substrate and having first and second opposed surfaces (47, 45) exposed for contact with a gas to be sensed, wherein the first surface faces away from a major surface of the substrate, wherein the second surface faces toward said major surface, and wherein the electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable; and a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening, wherein the support structure comprises at least one elongate strut that extends across the opening and that is attached to the sensor element at intervals along the sensor element.
Process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment, the process comprising: • a first heat treatment step at a first temperature greater than a threshold temperature which is between 1150°C and 1170 °C, and under a first gas flow defined by a first flow rate greater than 20 slm; a first smoothing of the surface of the structure taking place during said first heat treatment step; the process being characterized in that it comprises: • a second heat treatment step at a second temperature lower than the first temperature and the threshold temperature and greater than 1130°C, and under a second gas flow defined by a second flow rate lower than the first flow rate and less than 15 slm; a second smoothing of the surface of the structure taking place during said second heat treatment step. • a first heat treatment step at a first temperature greater than a threshold temperature which is between 1150°C and 1170 °C, and under a first gas flow defined by a first flow rate greater than 20 slm; a first smoothing of the surface of the structure taking place during said first heat treatment step; • a second heat treatment step at a second temperature lower than the first temperature and the threshold temperature and greater than 1130°C, and under a second gas flow defined by a second flow rate lower than the first flow rate and less than 15 slm; a second smoothing of the surface of the structure taking place during said second heat treatment step.
A process for treating cold dispersible locust bean gum powder, said process comprising i. heating a powder containing at least 10 wt.% cold dispersible LBG, based on dry weight of the powder and having a viscosity of at least 100 mPas at 20°C at a shear rate of 100/sec when dissolved in water in a concentration of 1%, to a temperature between 80° and 120° Celsius; or ii. heating a powder containing at least 10 wt.% cold dispersible LBG, based on dry weight of the powder and having a viscosity of at least 100 mPas at 20°C at a shear rate of 100/sec when dissolved in water in a concentration of 1%, to a temperature between 120° and 150° Celsius for 1 to 60 minutes. i. heating a powder containing at least 10 wt.% cold dispersible LBG, based on dry weight of the powder and having a viscosity of at least 100 mPas at 20°C at a shear rate of 100/sec when dissolved in water in a concentration of 1%, to a temperature between 80° and 120° Celsius; or ii. heating a powder containing at least 10 wt.% cold dispersible LBG, based on dry weight of the powder and having a viscosity of at least 100 mPas at 20°C at a shear rate of 100/sec when dissolved in water in a concentration of 1%, to a temperature between 120° and 150° Celsius for 1 to 60 minutes.
A gripping device comprising: a palm portion; a plurality of finger portions protruding from a periphery of the palm portion and configured to fall toward the palm portion by deforming the palm portion in a thickness direction; a connecting portion (33, 78) formed in a position surrounding an outer edge of the palm portion on a side opposite to a side formed with the finger portions, the connecting portion (33, 78) connected to a case (36, 76); and an actuator (52A, 52B, 52C) configured to deform the palm portion in the thickness direction, characterized in that the gripping device further comprises: a high-strength portion (38, 92) provided between the palm portion and the connecting portion (33, 78), the high-strength portion (38, 92) having a predetermined length from the outer edge of the palm portion in the thickness direction of the palm portion, and the high-strength portion (38, 92) being less likely to be deformed than the palm portion; and the case (36, 76) connected to the connecting portion (33, 78), the case (36, 76) coming into contact with a base end of the high-strength portion (38, 92). a palm portion; a plurality of finger portions protruding from a periphery of the palm portion and configured to fall toward the palm portion by deforming the palm portion in a thickness direction; a connecting portion (33, 78) formed in a position surrounding an outer edge of the palm portion on a side opposite to a side formed with the finger portions, the connecting portion (33, 78) connected to a case (36, 76); and an actuator (52A, 52B, 52C) configured to deform the palm portion in the thickness direction, characterized in that the gripping device further comprises: a high-strength portion (38, 92) provided between the palm portion and the connecting portion (33, 78), the high-strength portion (38, 92) having a predetermined length from the outer edge of the palm portion in the thickness direction of the palm portion, and the high-strength portion (38, 92) being less likely to be deformed than the palm portion; and the case (36, 76) connected to the connecting portion (33, 78), the case (36, 76) coming into contact with a base end of the high-strength portion (38, 92). a high-strength portion (38, 92) provided between the palm portion and the connecting portion (33, 78), the high-strength portion (38, 92) having a predetermined length from the outer edge of the palm portion in the thickness direction of the palm portion, and the high-strength portion (38, 92) being less likely to be deformed than the palm portion; and the case (36, 76) connected to the connecting portion (33, 78), the case (36, 76) coming into contact with a base end of the high-strength portion (38, 92).
A process for the preparation of methyl methacrylate, the process comprising: contacting ethylene with CO and H 2 in the presence of a hydroformylation catalyst under reaction conditions sufficient to produce propionaldehyde; contacting at least a portion of the propionaldehyde with formaldehyde in the presence of a catalyst to produce methacrolein, the methacrolein being in a first stream comprising water, the methacrolein, and methanol, with the proviso that the first stream comprises at least 10 weight percent water; providing at least a portion of the first stream to a phase separator; allowing at least a portion of the first stream to phase separate in the phase separator into an organic phase that comprises primarily methacrolein and an aqueous phase that comprises primarily water; distilling at least a portion of the organic phase in a dehydration column to produce a product stream comprising primarily methacrolein, the product stream comprising less than 2 wt% water; and providing at least a portion of the product stream to a process comprising contacting the methacrolein with methanol and an oxygen-containing gas in the presence of an oxidative esterification catalyst under reaction conditions sufficient to produce MMA. contacting ethylene with CO and H 2 in the presence of a hydroformylation catalyst under reaction conditions sufficient to produce propionaldehyde; contacting at least a portion of the propionaldehyde with formaldehyde in the presence of a catalyst to produce methacrolein, the methacrolein being in a first stream comprising water, the methacrolein, and methanol, with the proviso that the first stream comprises at least 10 weight percent water; providing at least a portion of the first stream to a phase separator; allowing at least a portion of the first stream to phase separate in the phase separator into an organic phase that comprises primarily methacrolein and an aqueous phase that comprises primarily water; distilling at least a portion of the organic phase in a dehydration column to produce a product stream comprising primarily methacrolein, the product stream comprising less than 2 wt% water; and providing at least a portion of the product stream to a process comprising contacting the methacrolein with methanol and an oxygen-containing gas in the presence of an oxidative esterification catalyst under reaction conditions sufficient to produce MMA.
Steel strip having an ultimate tensile strength Rm classifying for 1000MPa steel category, consisting of (in mass percent) C 0.09-0.19%; Mn 2.10-2.50%; Si at most 0.1%; Cr 0.4-0.8%; Mo at most 0.3%; Ni at most 0.4%; Al 0.02-1.3%; Nb at most 0.04%; P optionally equal to or more than 0.0005% and less than 0.05%; N equal to or less than 0.015%; Ti equal to or less than 0.1%; V equal to or less than 0.1%; B equal to or less than 0.01 %. wherein the sum of Cr, Mo and Ni is at least 0.5%; the balance being Fe and inevitable impurities; and having a microstructure comprising, in area%, martensite 5-40%; ferrite/upper bainite 30-95%; lower bainite/tempered martensite 0-30%; and optionally pearlite less than 5%. C 0.09-0.19%; Mn 2.10-2.50%; Si at most 0.1%; Cr 0.4-0.8%; Mo at most 0.3%; Ni at most 0.4%; Al 0.02-1.3%; Nb at most 0.04%; P optionally equal to or more than 0.0005% and less than 0.05%; N equal to or less than 0.015%; Ti equal to or less than 0.1%; V equal to or less than 0.1%; B equal to or less than 0.01 %. wherein the sum of Cr, Mo and Ni is at least 0.5%; the balance being Fe and inevitable impurities; and having a microstructure comprising, in area%, martensite 5-40%; ferrite/upper bainite 30-95%; lower bainite/tempered martensite 0-30%; and optionally pearlite less than 5%.
A safety brake for lift systems, with a braking device comprising one or more movable braking elements to which a braking force can be respectively applied, with a movable piston (22a, 55a), with a device for actuating and/or releasing the braking device by means of at least one force (F1, F2,F3, F4) acting upon the piston (22a, 55a), which by means of a pressure agent in a pressure-agent volume (20, 17, 11a, 11b) between the braking elements and the piston (22a, 55a) can be transmitted to the braking elements, in order to generate the respective braking force, the device further comprising: - means (27, 40, 60) for generating a first force (F1, F3) acting upon the piston (22a, 55a) for actuating the braking device, and - means (23, 65) for generating a second force (F2, F4) acting upon the piston (22a, 55a), which counteracts the first force (F1, f3). - means (27, 40, 60) for generating a first force (F1, F3) acting upon the piston (22a, 55a) for actuating the braking device, and - means (23, 65) for generating a second force (F2, F4) acting upon the piston (22a, 55a), which counteracts the first force (F1, f3).
Method for the detection of pulsed laser radiation having two-dimensional resolution of the direction of incidence, characterized in that - a CCD sensor having an imaging optic is used for the detection, - in a first signal processing having a sampling frequency of at least 100 kHz, single images are generated, by reading out each pixel of the CCD sensor at least every 10 μs and comparing each pixel to a threshold value and by storing the pixel value for further processing only if it exceeds the respective threshold value, - in the first signal processing, the mean value or peak value of these stored pixel values of a single image is ascertained pixel-by-pixel over at least 100 samples, - the signal image thus obtained in the first signal processing is provided at an image frequency of 10 Hz to 500 Hz to a further signal processing, - in the further signal processing, signal pixel(s), which represent(s) the incident laser radiation, is/are identified from the signal image, wherein the direction of incidence of the laser radiation results from the position of the signal pixels on the signal image. - a CCD sensor having an imaging optic is used for the detection, - in a first signal processing having a sampling frequency of at least 100 kHz, single images are generated, by reading out each pixel of the CCD sensor at least every 10 μs and comparing each pixel to a threshold value and by storing the pixel value for further processing only if it exceeds the respective threshold value, - in the first signal processing, the mean value or peak value of these stored pixel values of a single image is ascertained pixel-by-pixel over at least 100 samples, - the signal image thus obtained in the first signal processing is provided at an image frequency of 10 Hz to 500 Hz to a further signal processing, - in the further signal processing, signal pixel(s), which represent(s) the incident laser radiation, is/are identified from the signal image, wherein the direction of incidence of the laser radiation results from the position of the signal pixels on the signal image.