A display device, comprising: a substrate including a plurality of first electrodes; a plurality of semiconductor light emitting devices mounted on the substrate and electrically connected to the first electrodes; a plurality of second electrodes intersecting the first electrodes and electrically connected to the semiconductor light emitting devices and being positioned between the semiconductor light emitting devices; a conductive adhesive layer disposed between the substrate and the second electrodes and electrically connecting the semiconductor light emitting devices to the first electrodes, and a phosphor layer formed on one surface of the plurality of semiconductor light emitting devices; wherein the semiconductor light emitting devices comprise: a first conductivity type semiconductor layer; a first conductivity type electrode disposed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer; a second conductivity type electrode disposed on the second conductivity type semiconductor layer; and a passivation layer including a plurality of layers (1161, 1162) having different refractive indices, characterized in that the passivation layer further includes: a body portion covering side surfaces of the first and second conductivity type semiconductor layers (1153, 1155) to reflect light emitted to side surfaces of the semiconductor light emitting device, and a protrusion portion protruding in a direction intersecting the body portion from one end of the body portion, wherein the protrusion portion has an upper surface coplanar with an upper surface of the second conductivity type semiconductor layer, the protrusion portion overlaps the phosphor layer covering the semiconductor light emitting devices, and the protrusion portion being configured in order that light emitted from the upper surface of the second conductivity type semiconductor layer and reflected within the phosphor layer so as to move toward the conductive adhesive layer is reflected upwardly by the protrusion portion. a substrate including a plurality of first electrodes; a plurality of semiconductor light emitting devices mounted on the substrate and electrically connected to the first electrodes; a plurality of second electrodes intersecting the first electrodes and electrically connected to the semiconductor light emitting devices and being positioned between the semiconductor light emitting devices; a conductive adhesive layer disposed between the substrate and the second electrodes and electrically connecting the semiconductor light emitting devices to the first electrodes, and a phosphor layer formed on one surface of the plurality of semiconductor light emitting devices; wherein the semiconductor light emitting devices comprise: a first conductivity type semiconductor layer; a first conductivity type electrode disposed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer; a second conductivity type electrode disposed on the second conductivity type semiconductor layer; and a passivation layer including a plurality of layers (1161, 1162) having different refractive indices, a first conductivity type semiconductor layer; a first conductivity type electrode disposed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer overlapping the first conductivity type semiconductor layer; a second conductivity type electrode disposed on the second conductivity type semiconductor layer; and a passivation layer including a plurality of layers (1161, 1162) having different refractive indices, characterized in that the passivation layer further includes: a body portion covering side surfaces of the first and second conductivity type semiconductor layers (1153, 1155) to reflect light emitted to side surfaces of the semiconductor light emitting device, and a protrusion portion protruding in a direction intersecting the body portion from one end of the body portion, wherein the protrusion portion has an upper surface coplanar with an upper surface of the second conductivity type semiconductor layer, the protrusion portion overlaps the phosphor layer covering the semiconductor light emitting devices, and the protrusion portion being configured in order that light emitted from the upper surface of the second conductivity type semiconductor layer and reflected within the phosphor layer so as to move toward the conductive adhesive layer is reflected upwardly by the protrusion portion. a body portion covering side surfaces of the first and second conductivity type semiconductor layers (1153, 1155) to reflect light emitted to side surfaces of the semiconductor light emitting device, and a protrusion portion protruding in a direction intersecting the body portion from one end of the body portion, wherein the protrusion portion has an upper surface coplanar with an upper surface of the second conductivity type semiconductor layer, the protrusion portion overlaps the phosphor layer covering the semiconductor light emitting devices, and the protrusion portion being configured in order that light emitted from the upper surface of the second conductivity type semiconductor layer and reflected within the phosphor layer so as to move toward the conductive adhesive layer is reflected upwardly by the protrusion portion.