A distributed LC filter structure, comprising: a substrate having a trench etched in a top surface thereof; a first conductive layer disposed in the trench; a first insulator-metal structure disposed in the trench on top of the first conductive layer, the first insulator-metal structure comprising a first insulator layer disposed on top of the first conductive layer and a second conductive layer disposed on top of the first insulator layer; a second insulator-metal structure disposed in the trench on top of the first insulator-metal structure, the second insulator-metal structure comprising a second insulator layer disposed on top of the second conductive layer and a third conductive layer disposed on top of the second insulator layer; a first insulation layer deposited along the top surface of the substrate above the third conductive layer; a first metal layer deposited on top of the first insulation layer; a second insulation layer deposited on top of the first metal layer; a second metal layer deposited on top of the second insulation layer; a first contact array connecting the first conductive layer to the first metal layer; a second contact array connecting the second conductive layer to the second metal layer; and a third contact array connecting the third conductive layer to the first metal layer, wherein the first conductive layer, the second conductive layer, and the third conductive layer provide first, second, and third electrodes, respectively, the first, second, and third electrodes forming a first capacitive cell of the distributed LC filter; the second metal layer has a length and a width, the length being larger than the width by a factor of at least 100 and that the second metal layer provides an inductance of the distributed LC filter structure. a substrate having a trench etched in a top surface thereof; a first conductive layer disposed in the trench; a first insulator-metal structure disposed in the trench on top of the first conductive layer, the first insulator-metal structure comprising a first insulator layer disposed on top of the first conductive layer and a second conductive layer disposed on top of the first insulator layer; a second insulator-metal structure disposed in the trench on top of the first insulator-metal structure, the second insulator-metal structure comprising a second insulator layer disposed on top of the second conductive layer and a third conductive layer disposed on top of the second insulator layer; a first insulation layer deposited along the top surface of the substrate above the third conductive layer; a first metal layer deposited on top of the first insulation layer; a second insulation layer deposited on top of the first metal layer; a second metal layer deposited on top of the second insulation layer; a first contact array connecting the first conductive layer to the first metal layer; a second contact array connecting the second conductive layer to the second metal layer; and a third contact array connecting the third conductive layer to the first metal layer, wherein the first conductive layer, the second conductive layer, and the third conductive layer provide first, second, and third electrodes, respectively, the first, second, and third electrodes forming a first capacitive cell of the distributed LC filter; the second metal layer has a length and a width, the length being larger than the width by a factor of at least 100 and that the second metal layer provides an inductance of the distributed LC filter structure.