A light emitting device comprising: a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer, the adhesive layer including at least one metal or conductive material; a support member under the adhesive layer; a contact electrode (171, 172) connected to the first conductive type semiconductor layer; a first lead electrode disposed under the support member; a first electrode connecting the contact electrode (171, 172) to the first lead electrode, the first electrode disposed at a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer, the second electrode disposed at a second region of the support member; a second lead electrode connected to the second electrode, the second lead electrode disposed under the support member; and an insulating layer between the contact electrode (171, 172) and the light emitting structure layer, another insulating layer is disposed between the first electrode and an outer side of the adhesive layer, wherein an inner portion of the other insulating layer is disposed between the adhesive layer and the second conductive type semiconductor layer and an outer portion of the other insulating layer extends outward beyond the lateral side of the light emitting structure layer; wherein the support member includes an insulating material and the first and second electrodes (173, 183) are disposed to an inner region of the support member; wherein at least one of the first and second electrodes (173, 183) is protruded from a top surface of the support member, wherein an interval between the first electrode and the second electrode is wider than a width of the light emitting structure layer. a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer, the adhesive layer including at least one metal or conductive material; a support member under the adhesive layer; a contact electrode (171, 172) connected to the first conductive type semiconductor layer; a first lead electrode disposed under the support member; a first electrode connecting the contact electrode (171, 172) to the first lead electrode, the first electrode disposed at a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer, the second electrode disposed at a second region of the support member; a second lead electrode connected to the second electrode, the second lead electrode disposed under the support member; and an insulating layer between the contact electrode (171, 172) and the light emitting structure layer, another insulating layer is disposed between the first electrode and an outer side of the adhesive layer, wherein an inner portion of the other insulating layer is disposed between the adhesive layer and the second conductive type semiconductor layer and an outer portion of the other insulating layer extends outward beyond the lateral side of the light emitting structure layer; wherein the support member includes an insulating material and the first and second electrodes (173, 183) are disposed to an inner region of the support member; wherein at least one of the first and second electrodes (173, 183) is protruded from a top surface of the support member, wherein an interval between the first electrode and the second electrode is wider than a width of the light emitting structure layer.