A method of operating at least one solid-state electro-optic device to provide an electrically switching shutter, the method comprising: forming an alternating stack of first semiconductor layers having a first dopant, wherein the first dopant is a p-type material dopant, and second semiconductor layers having a second dopant, wherein the second dopant is an n-type material dopant, to form at least one superlattice semiconductor device; applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack; and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack; characterised in that forming the at least one superlattice semiconductor device includes arranging a plurality of superlattice semiconductor devices on a wafer to form an optic grid; the method further comprising applying the first voltage to a first plurality of superlattice semiconductor devices located at a first region of the optic grid and applying the second voltage to a second plurality of superlattice semiconductor devices located at a second region of the optic grid different from the first region to provide a segmented shutter; and further comprising using a radiation detector to detect a first light incident on the first region of the optic grid, the first light having a first intensity; using a radiation detector to detect a second light incident on the second region of the optic grid, the second light having a second intensity being greater than the first intensity; using a processor to apply the first voltage to the first plurality of superlattice semiconductor devices based on the first intensity; and using a processor to apply the second voltage to the second plurality of superlattice semiconductor devices based on the second intensity to inhibit transmission of the second light. forming an alternating stack of first semiconductor layers having a first dopant, wherein the first dopant is a p-type material dopant, and second semiconductor layers having a second dopant, wherein the second dopant is an n-type material dopant, to form at least one superlattice semiconductor device; applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack; and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack; characterised in that forming the at least one superlattice semiconductor device includes arranging a plurality of superlattice semiconductor devices on a wafer to form an optic grid; the method further comprising applying the first voltage to a first plurality of superlattice semiconductor devices located at a first region of the optic grid and applying the second voltage to a second plurality of superlattice semiconductor devices located at a second region of the optic grid different from the first region to provide a segmented shutter; and further comprising using a radiation detector to detect a first light incident on the first region of the optic grid, the first light having a first intensity; using a radiation detector to detect a second light incident on the second region of the optic grid, the second light having a second intensity being greater than the first intensity; using a processor to apply the first voltage to the first plurality of superlattice semiconductor devices based on the first intensity; and using a processor to apply the second voltage to the second plurality of superlattice semiconductor devices based on the second intensity to inhibit transmission of the second light.