A method of manufacturing a semiconductor device, comprising: an N-type epitaxial layer forming step of forming an N-type epitaxial layer on the surface of a SiC single-crystal substrate; a first fine pattern forming step of forming a p-type impurity region (3, 4), which is made of fine patterns, in the surface of the N-type epitaxial layer using a photolithography method in which a stepper is used; a second fine pattern forming step of forming a surface ohmic contact electrode, which is made of fine patterns, on the surface of the p-type impurity region (3, 4) which is made of fine patterns formed in the first fine pattern forming step, the second fine pattern forming step using a photolithography method in which a stepper is used; a protective film forming step of forming a protective film so as to cover the p-type impurity region (3, 4) and the surface ohmic contact electrode; a protective film planarizing step of performing planarization of the protective film; a substrate thinning step of reducing the thickness of the SiC single-crystal substrate; a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode on the backside of the SiC single-crystal substrate; a protective film removing step of removing the protective film; a surface Schottky contact electrode forming step of forming a Schottky metal portion connected to the p-type impurity region (3, 4) and the surface ohmic contact electrode; and a surface pad electrode forming step of forming a surface pad electrode so as to cover the Schottky metal portion after the surface Schottky contact electrode forming step. an N-type epitaxial layer forming step of forming an N-type epitaxial layer on the surface of a SiC single-crystal substrate; a first fine pattern forming step of forming a p-type impurity region (3, 4), which is made of fine patterns, in the surface of the N-type epitaxial layer using a photolithography method in which a stepper is used; a second fine pattern forming step of forming a surface ohmic contact electrode, which is made of fine patterns, on the surface of the p-type impurity region (3, 4) which is made of fine patterns formed in the first fine pattern forming step, the second fine pattern forming step using a photolithography method in which a stepper is used; a protective film forming step of forming a protective film so as to cover the p-type impurity region (3, 4) and the surface ohmic contact electrode; a protective film planarizing step of performing planarization of the protective film; a substrate thinning step of reducing the thickness of the SiC single-crystal substrate; a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode on the backside of the SiC single-crystal substrate; a protective film removing step of removing the protective film; a surface Schottky contact electrode forming step of forming a Schottky metal portion connected to the p-type impurity region (3, 4) and the surface ohmic contact electrode; and a surface pad electrode forming step of forming a surface pad electrode so as to cover the Schottky metal portion after the surface Schottky contact electrode forming step.