A method of producing a light emitting diode module, the method comprising: selecting at least one light emitting diode operable to produce an amount of light with a spectral power distribution; selecting a component with a first concentration, a first thickness, and a first coverage area of a first type of wavelength converting material having a first wavelength converting characteristic and a second concentration, a second thickness, and a second coverage area of a second type of wavelength converting material having a second wavelength converting characteristic that is different from the first wavelength converting characteristic, the first type of wavelength converting material and the second type of wavelength converting material being located on the component that is physically separated from the at least one light emitting diode and that defines a light mixing chamber configured to convert a portion of the amount of light emitted by the at least one light emitting diode to an amount of converted light output; wherein the first concentration, the first thickness, and the first coverage area of the first type of wavelength converting material is selected based on the spectral power distribution of the at least one light emitting diode to produce a desired color point shift along a first direction in a CIE 1976 u'v' diagram and the second concentration, the second thickness, and the second coverage area of the second type of wavelength converting material is selected based on the spectral power distribution of the at least one light emitting diode to produce a desired color point shift along a second direction in the CIE 1976 u'v' diagram, wherein the first direction and the second direction are not parallel, and the color point shift along the first direction and the color point shift along the second direction with the spectral power distribution of the at least one light emitting diode produce a color point with a degree of departure Δu'v' of 0.009 or less from a predetermined color point in the CIE 1976 u'v' diagram. selecting at least one light emitting diode operable to produce an amount of light with a spectral power distribution; selecting a component with a first concentration, a first thickness, and a first coverage area of a first type of wavelength converting material having a first wavelength converting characteristic and a second concentration, a second thickness, and a second coverage area of a second type of wavelength converting material having a second wavelength converting characteristic that is different from the first wavelength converting characteristic, the first type of wavelength converting material and the second type of wavelength converting material being located on the component that is physically separated from the at least one light emitting diode and that defines a light mixing chamber configured to convert a portion of the amount of light emitted by the at least one light emitting diode to an amount of converted light output; wherein the first concentration, the first thickness, and the first coverage area of the first type of wavelength converting material is selected based on the spectral power distribution of the at least one light emitting diode to produce a desired color point shift along a first direction in a CIE 1976 u'v' diagram and the second concentration, the second thickness, and the second coverage area of the second type of wavelength converting material is selected based on the spectral power distribution of the at least one light emitting diode to produce a desired color point shift along a second direction in the CIE 1976 u'v' diagram, wherein the first direction and the second direction are not parallel, and the color point shift along the first direction and the color point shift along the second direction with the spectral power distribution of the at least one light emitting diode produce a color point with a degree of departure Δu'v' of 0.009 or less from a predetermined color point in the CIE 1976 u'v' diagram.