A light emitting diode comprising: a conductive support member (110, 310); a first conductive layer (120, 320) on the conductive support member (110, 310); a second conductive layer (130, 330) on the first conductive layer (120, 320); an insulation layer (170, 370) between the first conductive layer (120, 320) and the second conductive layer (130, 330); and a light emitting structure that includes a second semiconductor layer (150, 350) on the second conductive layer (130, 330), a first semiconductor layer (140, 340), and an active layer (160, 360) between the first semiconductor layer (140, 340) and the second semiconductor layer (150, 350), the first semiconductor layer being an n-type semiconductor and the second semiconductor layer being a p-type semiconductor layer; wherein the first semiconductor layer (140, 340) includes a top surface (B1, Ba1), wherein the first conductive layer (120, 320) includes at least one conductive via (120a, 320a) that passes through the second conductive layer (130, 330), the second semiconductor layer (150, 350) and the active layer (160, 360), wherein the conductive via (120a, 320a) comprises a top surface provided into the first semiconductor layer (140, 340), wherein the insulation layer (170, 370) substantially surrounds a side wall of the conductive via (120a, 320a), wherein the top surface (B1, Ba1) of the first semiconductor layer (140, 340) has a surface roughness, and wherein the second conductive layer (130, 330) reflects light from the active layer (160, 360), characterized in that the top surface of the conductive via (120a, 320a) has a surface roughness, and in that the light emitting diode further comprises a reflective layer (175, 375) located between the side wall of the conductive via (120a, 320a) and the insulation layer (170, 370) formed on the side wall of the conductive via (120a, 320a), wherein the reflective layer (175, 375) has a material different from that of the first conductive layer (120, 320). a conductive support member (110, 310); a first conductive layer (120, 320) on the conductive support member (110, 310); a second conductive layer (130, 330) on the first conductive layer (120, 320); an insulation layer (170, 370) between the first conductive layer (120, 320) and the second conductive layer (130, 330); and a light emitting structure that includes a second semiconductor layer (150, 350) on the second conductive layer (130, 330), a first semiconductor layer (140, 340), and an active layer (160, 360) between the first semiconductor layer (140, 340) and the second semiconductor layer (150, 350), the first semiconductor layer being an n-type semiconductor and the second semiconductor layer being a p-type semiconductor layer; wherein the first semiconductor layer (140, 340) includes a top surface (B1, Ba1), wherein the first conductive layer (120, 320) includes at least one conductive via (120a, 320a) that passes through the second conductive layer (130, 330), the second semiconductor layer (150, 350) and the active layer (160, 360), wherein the conductive via (120a, 320a) comprises a top surface provided into the first semiconductor layer (140, 340), wherein the insulation layer (170, 370) substantially surrounds a side wall of the conductive via (120a, 320a), wherein the top surface (B1, Ba1) of the first semiconductor layer (140, 340) has a surface roughness, and wherein the second conductive layer (130, 330) reflects light from the active layer (160, 360), characterized in that the top surface of the conductive via (120a, 320a) has a surface roughness, and in that the light emitting diode further comprises a reflective layer (175, 375) located between the side wall of the conductive via (120a, 320a) and the insulation layer (170, 370) formed on the side wall of the conductive via (120a, 320a), wherein the reflective layer (175, 375) has a material different from that of the first conductive layer (120, 320).