A three-dimensional implant (100, 200, 300) for tissue reconstruction or tissue augmentation for insertion into a patient, the implant comprising: a plurality of planar layers, wherein a first group of sublayers comprises a plurality of strands oriented in first direction, wherein a second group of sublayers comprises a plurality of strands oriented in a second direction, the sublayers of the first group of sublayers and the sublayers of the second group of sublayers are arranged alternatingly in a third direction, the plurality of layers forming a three-dimensional structure comprising a plurality of hollow channels extending in the third direction, wherein the implant is compressible at least along the third direction; wherein each hollow channel comprises a first sidewall extending in the third direction and comprises a plurality of strand segments oriented in a first direction and a plurality of gaps arranged alternatingly, and a second sidewall extending in the third direction and comprising a plurality of strand segments oriented in the second direction and a plurality of gaps arranged alternatingly, wherein at least one of the first sidewall and the second sidewall of the hollow channel is an undulating sidewall, wherein the plurality of strand segments (105A, 105B) of the undulating sidewall (104A, 104B) belong to different layers of the implant, wherein adjacent strand segments (105A, 105B) of the undulating sidewall (104A, 104B) are separated by a gap, wherein the adjacent strand segments (105A, 105B) have a lateral offset with respect to each other to create a pattern of a plurality of peaks and a plurality of troughs of the undulating sidewall (104A, 104B). a plurality of planar layers, wherein a first group of sublayers comprises a plurality of strands oriented in first direction, wherein a second group of sublayers comprises a plurality of strands oriented in a second direction, the sublayers of the first group of sublayers and the sublayers of the second group of sublayers are arranged alternatingly in a third direction, the plurality of layers forming a three-dimensional structure comprising a plurality of hollow channels extending in the third direction, wherein the implant is compressible at least along the third direction; wherein each hollow channel comprises a first sidewall extending in the third direction and comprises a plurality of strand segments oriented in a first direction and a plurality of gaps arranged alternatingly, and a second sidewall extending in the third direction and comprising a plurality of strand segments oriented in the second direction and a plurality of gaps arranged alternatingly, wherein at least one of the first sidewall and the second sidewall of the hollow channel is an undulating sidewall, wherein the plurality of strand segments (105A, 105B) of the undulating sidewall (104A, 104B) belong to different layers of the implant, wherein adjacent strand segments (105A, 105B) of the undulating sidewall (104A, 104B) are separated by a gap, wherein the adjacent strand segments (105A, 105B) have a lateral offset with respect to each other to create a pattern of a plurality of peaks and a plurality of troughs of the undulating sidewall (104A, 104B).