A photonic device comprising: a substrate; a first diode comprising: a first bottom diode material comprising a first semiconductor material that is lattice mismatched to the substrate; a first top diode material; and a first active diode region between the first top diode material and the first bottom diode material; and a second diode comprising: a second bottom diode material comprising a second semiconductor material that is lattice mismatched to the substrate; a second top diode material; and a second active diode region between the second top diode material and the second bottom diode material; wherein each one of the diodes is covered with a second dielectric material; and contact vias are patterned through the second dielectric material; wherein each one of the diodes contains different sets of semiconductor materials for the top, active, and bottom diode regions such that in each diode device, the bandgaps of the active diode region materials are tailored to emit light of the desired color or to absorb light of the desired frequency; characterized in that individual contacts are deposited on the top of each diode; in that the photonic device further comprises a dielectric material deposited onto the substrate including a first set of at least two openings and a second set of at least two openings, each of the openings in the first set and the second set exposing a portion of the substrate and having an aspect ratio of at least 1, wherein the aspect ratio is a ratio of a height of the opening to a width of the opening; in that the first semiconductor material occupies the first set of at least two openings and is coalesced above the first set of at least two openings; and in that the second semiconductor material occupies the second set of at least two openings and is coalesced above the second set of at least two openings. a substrate; a first diode comprising: a first bottom diode material comprising a first semiconductor material that is lattice mismatched to the substrate; a first top diode material; and a first active diode region between the first top diode material and the first bottom diode material; and a first bottom diode material comprising a first semiconductor material that is lattice mismatched to the substrate; a first top diode material; and a first active diode region between the first top diode material and the first bottom diode material; and a second diode comprising: a second bottom diode material comprising a second semiconductor material that is lattice mismatched to the substrate; a second top diode material; and a second active diode region between the second top diode material and the second bottom diode material; a second bottom diode material comprising a second semiconductor material that is lattice mismatched to the substrate; a second top diode material; and a second active diode region between the second top diode material and the second bottom diode material; wherein each one of the diodes is covered with a second dielectric material; and contact vias are patterned through the second dielectric material; wherein each one of the diodes contains different sets of semiconductor materials for the top, active, and bottom diode regions such that in each diode device, the bandgaps of the active diode region materials are tailored to emit light of the desired color or to absorb light of the desired frequency; characterized in that individual contacts are deposited on the top of each diode; in that the photonic device further comprises a dielectric material deposited onto the substrate including a first set of at least two openings and a second set of at least two openings, each of the openings in the first set and the second set exposing a portion of the substrate and having an aspect ratio of at least 1, wherein the aspect ratio is a ratio of a height of the opening to a width of the opening; in that the first semiconductor material occupies the first set of at least two openings and is coalesced above the first set of at least two openings; and in that the second semiconductor material occupies the second set of at least two openings and is coalesced above the second set of at least two openings.