A semiconductor package assembly, comprising: a redistribution layer, RDL, structure, wherein the RDL structure comprises a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region; a semiconductor die disposed on a first surface of the RDL structure in the first region; a molding compound surrounding the semiconductor die, being in contact with the first surface of the RDL structure in the second region and the semiconductor die; conductive traces included in the RDL structure; redistribution layer contact pads electrically coupled to the conductive traces and located in the first region and in the second region, and: conductive structures in contact with and electrically connected to the RDL contact pads, which are arranged close to a second surface opposite to the first surface; wherein the RDL contact pads are composed of a symmetrical portion (318a, 318b) and an extended wing portion (318c-318f) connected to the symmetrical portion (318a, 318b), wherein the extended wing portion overlaps at least one half of the boundary of the symmetrical portion (318a, 318b) when observed from a plan view; and wherein in the RDL contact pads disposed within the first region, an angle (Θ1) between a first direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the first region, and a second direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the boundary of the extended wing portion (318c-318f), is in a range from about 0 degrees to about 90 degrees in the clockwise direction or in the counterclockwise direction; and in the RDL contact pads disposed within the second region, an angle (Θ 2) between the first direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the first region, and the second direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the boundary of the extended wing portion (318c-318f), is in a range from about 90 degrees to about 270 degrees in the clockwise direction. a redistribution layer, RDL, structure, wherein the RDL structure comprises a first region for a semiconductor die to be disposed thereon and a second region surrounding the first region; a semiconductor die disposed on a first surface of the RDL structure in the first region; a molding compound surrounding the semiconductor die, being in contact with the first surface of the RDL structure in the second region and the semiconductor die; conductive traces included in the RDL structure; redistribution layer contact pads electrically coupled to the conductive traces and located in the first region and in the second region, and: conductive structures in contact with and electrically connected to the RDL contact pads, which are arranged close to a second surface opposite to the first surface; wherein the RDL contact pads are composed of a symmetrical portion (318a, 318b) and an extended wing portion (318c-318f) connected to the symmetrical portion (318a, 318b), wherein the extended wing portion overlaps at least one half of the boundary of the symmetrical portion (318a, 318b) when observed from a plan view; and wherein in the RDL contact pads disposed within the first region, an angle (Θ1) between a first direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the first region, and a second direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the boundary of the extended wing portion (318c-318f), is in a range from about 0 degrees to about 90 degrees in the clockwise direction or in the counterclockwise direction; and in the RDL contact pads disposed within the second region, an angle (Θ 2) between the first direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the first region, and the second direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the boundary of the extended wing portion (318c-318f), is in a range from about 90 degrees to about 270 degrees in the clockwise direction. conductive structures in contact with and electrically connected to the RDL contact pads, which are arranged close to a second surface opposite to the first surface; wherein the RDL contact pads are composed of a symmetrical portion (318a, 318b) and an extended wing portion (318c-318f) connected to the symmetrical portion (318a, 318b), wherein the extended wing portion overlaps at least one half of the boundary of the symmetrical portion (318a, 318b) when observed from a plan view; and wherein in the RDL contact pads disposed within the first region, an angle (Θ1) between a first direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the first region, and a second direction, from the center point of the symmetrical portion (318a, 318b) to a center point of the boundary of the extended wing portion (318c-318f), is in a range from about 0 degrees to about 90 degrees in the clockwise direction or in the counterclockwise direction; and in the RDL contact pads disposed within the second region, an angle (Θ 2) between the first direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the first region, and the second direction, from the center point of the symmetrical portion (318a, 318b) to the center point of the boundary of the extended wing portion (318c-318f), is in a range from about 90 degrees to about 270 degrees in the clockwise direction.