Optoelectronic device, comprising: ∘ a semiconductor layer based on a crystalline semiconductor, comprising: • a central segment, - which has a shape that is elongate along a longitudinal axis, of length along the longitudinal axis larger than its average width, - which is tensilely strained along the longitudinal axis, and - which comprises an active region for emitting or detecting light radiation; • at least two first lateral segments forming tensioning arms, - which are opposite one another with respect to the central segment along the longitudinal axis and extend from the central segment, and - which have an average width larger than the average width of the central segment, so as to tensilely strain the central segment along the longitudinal axis; ∘ at least two connection pads, which are suitable for applying an electrical bias to the central segment; ∘ wherein the semiconductor layer furthermore comprises: • at least two second lateral segments forming biasing arms, - which are opposite one another with respect to the central segment along a transverse axis oriented orthogonally to the longitudinal axis and extend from the central segment, each being formed: ▪ from a main portion, which makes electrical contact with one of the connection pads, the main portions of the biasing arms being doped opposite conductivity types, ▪ from a plurality of joining portions, which are separate from one another along the longitudinal axis and link the main portion to the central segment. ∘ a semiconductor layer based on a crystalline semiconductor, comprising: • a central segment, - which has a shape that is elongate along a longitudinal axis, of length along the longitudinal axis larger than its average width, - which is tensilely strained along the longitudinal axis, and - which comprises an active region for emitting or detecting light radiation; • at least two first lateral segments forming tensioning arms, - which are opposite one another with respect to the central segment along the longitudinal axis and extend from the central segment, and - which have an average width larger than the average width of the central segment, so as to tensilely strain the central segment along the longitudinal axis; • a central segment, - which has a shape that is elongate along a longitudinal axis, of length along the longitudinal axis larger than its average width, - which is tensilely strained along the longitudinal axis, and - which comprises an active region for emitting or detecting light radiation; - which has a shape that is elongate along a longitudinal axis, of length along the longitudinal axis larger than its average width, - which is tensilely strained along the longitudinal axis, and - which comprises an active region for emitting or detecting light radiation; • at least two first lateral segments forming tensioning arms, - which are opposite one another with respect to the central segment along the longitudinal axis and extend from the central segment, and - which have an average width larger than the average width of the central segment, so as to tensilely strain the central segment along the longitudinal axis; - which are opposite one another with respect to the central segment along the longitudinal axis and extend from the central segment, and - which have an average width larger than the average width of the central segment, so as to tensilely strain the central segment along the longitudinal axis; ∘ at least two connection pads, which are suitable for applying an electrical bias to the central segment; ∘ wherein the semiconductor layer furthermore comprises: • at least two second lateral segments forming biasing arms, - which are opposite one another with respect to the central segment along a transverse axis oriented orthogonally to the longitudinal axis and extend from the central segment, each being formed: ▪ from a main portion, which makes electrical contact with one of the connection pads, the main portions of the biasing arms being doped opposite conductivity types, ▪ from a plurality of joining portions, which are separate from one another along the longitudinal axis and link the main portion to the central segment. • at least two second lateral segments forming biasing arms, - which are opposite one another with respect to the central segment along a transverse axis oriented orthogonally to the longitudinal axis and extend from the central segment, each being formed: ▪ from a main portion, which makes electrical contact with one of the connection pads, the main portions of the biasing arms being doped opposite conductivity types, ▪ from a plurality of joining portions, which are separate from one another along the longitudinal axis and link the main portion to the central segment. - which are opposite one another with respect to the central segment along a transverse axis oriented orthogonally to the longitudinal axis and extend from the central segment, each being formed: ▪ from a main portion, which makes electrical contact with one of the connection pads, the main portions of the biasing arms being doped opposite conductivity types, ▪ from a plurality of joining portions, which are separate from one another along the longitudinal axis and link the main portion to the central segment. ▪ from a main portion, which makes electrical contact with one of the connection pads, the main portions of the biasing arms being doped opposite conductivity types, ▪ from a plurality of joining portions, which are separate from one another along the longitudinal axis and link the main portion to the central segment.