A display device, comprising: a substrate; a semiconductor light emitting device having a first conductive electrode disposed on the substrate and formed annularly on an upper edge thereof and a second conductive electrode formed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode; a passivation layer formed to cover a part of an upper surface of the semiconductor light emitting device; a first wiring electrode electrically connected to the first conductive electrode; and a second wiring electrode extended from the upper edge of the semiconductor light emitting device to the upper central portion of the semiconductor light emitting device and electrically connected to the second conductive electrode, wherein a part of the second wiring electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, wherein the semiconductor light emitting device comprises a first conductive semiconductor layer disposed below the first conductive electrode, a second conductive semiconductor layer disposed below the second conductive electrode and an active layer formed between the first and second conductive semiconductor layers, characterised in that an upper central portion of the second conductive semiconductor layer comprises a recess portion thereon, and the upper central portion is disposed higher than an upper portion of the first conductive semiconductor layer, wherein the second conductive electrode is disposed in the recess portion, and wherein a top most surface of the second conductive electrode is same with a top most surface of the upper central portion of the second conductive semiconductor layer. a substrate; a semiconductor light emitting device having a first conductive electrode disposed on the substrate and formed annularly on an upper edge thereof and a second conductive electrode formed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode; a passivation layer formed to cover a part of an upper surface of the semiconductor light emitting device; a first wiring electrode electrically connected to the first conductive electrode; and a second wiring electrode extended from the upper edge of the semiconductor light emitting device to the upper central portion of the semiconductor light emitting device and electrically connected to the second conductive electrode, wherein a part of the second wiring electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, wherein the semiconductor light emitting device comprises a first conductive semiconductor layer disposed below the first conductive electrode, a second conductive semiconductor layer disposed below the second conductive electrode and an active layer formed between the first and second conductive semiconductor layers, characterised in that an upper central portion of the second conductive semiconductor layer comprises a recess portion thereon, and the upper central portion is disposed higher than an upper portion of the first conductive semiconductor layer, wherein the second conductive electrode is disposed in the recess portion, and wherein a top most surface of the second conductive electrode is same with a top most surface of the upper central portion of the second conductive semiconductor layer.