A method of manufacturing a solar cell comprising: a photoelectric conversion section; and a collecting electrode on one main surface of the photoelectric conversion section, wherein the collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer, wherein a part of the second electroconductive layer is conductively connected with the first electroconductive layer, the method comprising: a first electroconductive layer forming step of forming the first electroconductive layer on a photoelectric conversion section, the first electroconductive layer comprising a low-melting-point material having a thermal-fluidization onset temperature T 1 that is lower than a heat-resistant temperature of the photoelectric conversion section; an insulating layer forming step of forming the insulating layer on the first electroconductive layer; an annealing step of heating the first electroconductive layer so that the low-melting-point material is thermally fluidized in the annealing step to deform the insulating layer on the first electroconductive layer; and a plating step of forming the second electroconductive layer by a plating method, in this order, wherein in the annealing step, a heating treatment is carried out at an annealing temperature T a that is higher than a thermal-fluidization onset temperature T 1 of the low-melting-point material, wherein the deformed section in the insulating layer is an opening section, and wherein a part of the second electroconductive layer is conductively connected with the first electroconductive layer by forming the opening section in the insulating layer and filling the opening section with a material of the second electroconductive layer or wherein the deformed section in the insulating layer is a part of the insulating layer having a small thickness of only several nanometers allowing a part of the second electroconductive layer to conductively connect with the first electroconductive layer. a first electroconductive layer forming step of forming the first electroconductive layer on a photoelectric conversion section, the first electroconductive layer comprising a low-melting-point material having a thermal-fluidization onset temperature T 1 that is lower than a heat-resistant temperature of the photoelectric conversion section; an insulating layer forming step of forming the insulating layer on the first electroconductive layer; an annealing step of heating the first electroconductive layer so that the low-melting-point material is thermally fluidized in the annealing step to deform the insulating layer on the first electroconductive layer; and a plating step of forming the second electroconductive layer by a plating method, in this order, wherein in the annealing step, a heating treatment is carried out at an annealing temperature T a that is higher than a thermal-fluidization onset temperature T 1 of the low-melting-point material, wherein the deformed section in the insulating layer is an opening section, and wherein a part of the second electroconductive layer is conductively connected with the first electroconductive layer by forming the opening section in the insulating layer and filling the opening section with a material of the second electroconductive layer or wherein the deformed section in the insulating layer is a part of the insulating layer having a small thickness of only several nanometers allowing a part of the second electroconductive layer to conductively connect with the first electroconductive layer.