An organic light emitting diode (OLED) display, comprising: a substrate comprising a pixel area and a peripheral area surrounding the pixel area, wherein the pixel area comprises at least one pixel comprising an organic light emitting element; a common voltage line disposed in the peripheral area and configured to transmit a common voltage to the pixel area: at least one thin film transistor (Qd) disposed in the pixel area; a first interlayer insulating layer formed on the at least one thin film transistor (Qd); a second interlayer insulating layer formed on the first interlayer insulating layer; an end of the second interlayer insulating layer is positioned on the common voltage line, thereby covering one side of the common voltage line a barrier rib disposed on the substrate; a protection member (183, 193, 903) covering another side of the common voltage line; a first electrode disposed in the pixel area and connected to the at least one thin film transistor (Qd); an organic emission layer disposed on the first electrode; a second electrode disposed on the organic emission layer and connected to the common voltage line, and a connection member contacting the common voltage line between the barrier rib and the protection member (193, 903), wherein the common voltage line surrounds the pixel area, and the protection member (183, 903) is formed according to a layout of the common voltage line, the organic light emitting diode further includes an encapsulation layer disposed on the protection member (183, 193) and the second electrode, the encapsulation layer comprises at least one of an inorganic layer and an organic layer, and characterized in that the protection member (193, 903) covers a side of the connection member disposed on the common voltage line. a substrate comprising a pixel area and a peripheral area surrounding the pixel area, wherein the pixel area comprises at least one pixel comprising an organic light emitting element; a common voltage line disposed in the peripheral area and configured to transmit a common voltage to the pixel area: at least one thin film transistor (Qd) disposed in the pixel area; a first interlayer insulating layer formed on the at least one thin film transistor (Qd); a second interlayer insulating layer formed on the first interlayer insulating layer; an end of the second interlayer insulating layer is positioned on the common voltage line, thereby covering one side of the common voltage line a barrier rib disposed on the substrate; a protection member (183, 193, 903) covering another side of the common voltage line; a first electrode disposed in the pixel area and connected to the at least one thin film transistor (Qd); an organic emission layer disposed on the first electrode; a second electrode disposed on the organic emission layer and connected to the common voltage line, and a connection member contacting the common voltage line between the barrier rib and the protection member (193, 903), wherein the common voltage line surrounds the pixel area, and the protection member (183, 903) is formed according to a layout of the common voltage line, the organic light emitting diode further includes an encapsulation layer disposed on the protection member (183, 193) and the second electrode, the encapsulation layer comprises at least one of an inorganic layer and an organic layer, and characterized in that the protection member (193, 903) covers a side of the connection member disposed on the common voltage line.