A light emitting diode comprising: a light emitting structure including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer; a substrate disposed under the light emitting structure; a first electrode including at least one arm shape and contacted with a portion of the first conductivity type semiconductor layer; an insulating layer (130,130A) covering the first electrode; a second electrode (150, 151) including at least one arm shape, wherein the second electrode (150, 151) is disposed on the insulating layer (130,130A) and the second conductivity type semiconductor layer; and a second electrode layer between the second electrode (150,151) and the second conductivity type semiconductor layer; wherein the second electrode (150,151) is connected with the second conductivity type semiconductor layer through the second electrode layer, the first electrode is formed on the first conductivity type semiconductor layer, and the second electrode (150,151) is vertically overlapped with the first electrode on the insulating layer (130,130A), characterized in that: the light emitting diode comprises a first electrode layer (140,141) on the second electrode (150, 151), wherein the first electrode layer (140, 141) is formed on the insulating layer (130, 130A) and the second conductivity type semiconductor layer; in that each of the first electrode layer (140, 141) and the second electrode layer includes a transmissive electrode layer; in that the second electrode (150, 151), the second electrode layer and the first electrode layer (140, 141) are electrically connected to each other; and in that a portion of the first electrode layer (140, 141) directly makes contact with the top surface of the second electrode layer. a light emitting structure including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer; a substrate disposed under the light emitting structure; a first electrode including at least one arm shape and contacted with a portion of the first conductivity type semiconductor layer; an insulating layer (130,130A) covering the first electrode; a second electrode (150, 151) including at least one arm shape, wherein the second electrode (150, 151) is disposed on the insulating layer (130,130A) and the second conductivity type semiconductor layer; and a second electrode layer between the second electrode (150,151) and the second conductivity type semiconductor layer; wherein the second electrode (150,151) is connected with the second conductivity type semiconductor layer through the second electrode layer, the first electrode is formed on the first conductivity type semiconductor layer, and the second electrode (150,151) is vertically overlapped with the first electrode on the insulating layer (130,130A), characterized in that: the light emitting diode comprises a first electrode layer (140,141) on the second electrode (150, 151), wherein the first electrode layer (140, 141) is formed on the insulating layer (130, 130A) and the second conductivity type semiconductor layer; in that each of the first electrode layer (140, 141) and the second electrode layer includes a transmissive electrode layer; in that the second electrode (150, 151), the second electrode layer and the first electrode layer (140, 141) are electrically connected to each other; and in that a portion of the first electrode layer (140, 141) directly makes contact with the top surface of the second electrode layer. the light emitting diode comprises a first electrode layer (140,141) on the second electrode (150, 151), wherein the first electrode layer (140, 141) is formed on the insulating layer (130, 130A) and the second conductivity type semiconductor layer; in that each of the first electrode layer (140, 141) and the second electrode layer includes a transmissive electrode layer; in that the second electrode (150, 151), the second electrode layer and the first electrode layer (140, 141) are electrically connected to each other; and in that a portion of the first electrode layer (140, 141) directly makes contact with the top surface of the second electrode layer.