A surface light-emitting semiconductor laser element comprising: a lower reflector including a semiconductor multi-layer; a current confinement layer including a current injection region and an oxidized region; an active layer disposed between the lower reflector and the current confinement layer; an upper reflector including a semiconductor multi-layer, the upper reflector disposed on the current confinement layer, the upper reflector including an uppermost layer; and a complex refractive index distribution structure having a complex refraction index, the complex refractive index distribution structure comprising a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector, the contact layer having a plurality of layers (52A, 52B, 52C), each layer (52A, 52B, 52C) having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C) and having an opening (56A, 56B, 56C) with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C); and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer, wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening, wherein the contact layer and the electrode layer (36; 54) constitute the complex refractive index distribution structure, and wherein the complex refractive index changes in an outward direction from a center of the second opening. a lower reflector including a semiconductor multi-layer; a current confinement layer including a current injection region and an oxidized region; an active layer disposed between the lower reflector and the current confinement layer; an upper reflector including a semiconductor multi-layer, the upper reflector disposed on the current confinement layer, the upper reflector including an uppermost layer; and a complex refractive index distribution structure having a complex refraction index, the complex refractive index distribution structure comprising a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector, the contact layer having a plurality of layers (52A, 52B, 52C), each layer (52A, 52B, 52C) having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C) and having an opening (56A, 56B, 56C) with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C); and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer, wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening, a contact layer having a first refractive index and disposed on the uppermost layer and defining a first opening for exposing the upper reflector, the contact layer having a plurality of layers (52A, 52B, 52C), each layer (52A, 52B, 52C) having an impurity concentration that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C) and having an opening (56A, 56B, 56C) with a diameter that gradually decreases from an upper layer to a lower layer of the plurality of layers (52A, 52B, 52C); and an electrode layer (36; 54) having a second refraction index, that is different than the first refractive index, and disposed on the contact layer, wherein the electrode layer (36; 54) defines a second opening for exposing the upper reflector disposed inside the first opening, wherein the contact layer and the electrode layer (36; 54) constitute the complex refractive index distribution structure, and wherein the complex refractive index changes in an outward direction from a center of the second opening.