A magnetic sensor comprising: a plurality of magnetoresistive elements (120a, 130a) that are electrically connected to each other with wiring lines and form a bridge circuit; wherein the plurality of magnetoresistive elements includes a first magnetoresistive element and a second magnetoresistive element, which form a pair (120a & 130a), a rate of change of resistance of the first magnetoresistive element is higher than a rate of change of resistance of the second magnetoresistive element, the first magnetoresistive element includes a plurality of first unit patterns that are arranged along a circumference of an imaginary circle (C 11) in plan view so as to be arrayed in a circumferential direction or a diameter direction of the imaginary circle (C 11), the first unit patterns being connected to each other, the second magnetoresistive element is positioned inside the imaginary circle (C 11) and is surrounded by the first magnetoresistive element in plan view, wherein the second magnetoresistive element includes a plurality of second unit patterns that are narrower than the plurality of first unit patterns and are connected to each other, wherein the second magnetoresistive element is connected to a wiring line that extends from inside the imaginary circle to outside the imaginary circle, the plurality of first unit patterns are positioned along an imaginary C-shape having an open part, along the circumference of the imaginary circle, in which the wiring line is positioned, characterised in that there are two pairs (120a & 130a, 120b & 130b) of magnetoresistive elements, each comprising a first (120a, 120b) and a second magnetoresistive element (130a, 130b), and circumferential direction orientations of the two first magnetoresistive elements of the two pairs are different from each other such that orientations of the imaginary C-shapes are different from each other. a plurality of magnetoresistive elements (120a, 130a) that are electrically connected to each other with wiring lines and form a bridge circuit; wherein the plurality of magnetoresistive elements includes a first magnetoresistive element and a second magnetoresistive element, which form a pair (120a & 130a), a rate of change of resistance of the first magnetoresistive element is higher than a rate of change of resistance of the second magnetoresistive element, the first magnetoresistive element includes a plurality of first unit patterns that are arranged along a circumference of an imaginary circle (C 11) in plan view so as to be arrayed in a circumferential direction or a diameter direction of the imaginary circle (C 11), the first unit patterns being connected to each other, the second magnetoresistive element is positioned inside the imaginary circle (C 11) and is surrounded by the first magnetoresistive element in plan view, wherein the second magnetoresistive element includes a plurality of second unit patterns that are narrower than the plurality of first unit patterns and are connected to each other, wherein the second magnetoresistive element is connected to a wiring line that extends from inside the imaginary circle to outside the imaginary circle, the plurality of first unit patterns are positioned along an imaginary C-shape having an open part, along the circumference of the imaginary circle, in which the wiring line is positioned, characterised in that there are two pairs (120a & 130a, 120b & 130b) of magnetoresistive elements, each comprising a first (120a, 120b) and a second magnetoresistive element (130a, 130b), and circumferential direction orientations of the two first magnetoresistive elements of the two pairs are different from each other such that orientations of the imaginary C-shapes are different from each other.