A display device, comprising: a wiring substrate (110, 210, 310, 410, 510, 910) having at least one of a first electrode (120, 220, 320, 420, 520, 620, 720, 920) and a second electrode (140, 240, 340, 440, 540, 640, 740, 940); a conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) configured to cover the wiring substrate (110, 210, 310, 410, 510, 910); and a plurality of semiconductor light emitting devices (150, 250, 350, 450, 550, 950) coupled to the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930), and electrically connected to the first and second electrode, wherein the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) has a first conductive adhesive layer (431, 531, 831, 931) disposed in a first region and a second conductive adhesive layer (432, 532, 832, 932) disposed in a second region adjoining to the first region such that the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) is partitioned into a plurality of regions on the wiring substrate (110, 210, 310, 410, 510, 910), wherein a boundary portion (431a, 432a, 531a, 532a, 931a, 932a) between the first conductive adhesive layer (431, 531, 931) and the second conductive adhesive layer (432, 532, 932) is formed between the plurality of semiconductor light emitting devices, wherein the boundary portion has a first boundary portion (431a, 531a, 931a) and a second boundary portion (432a, 532a, 932a) formed on the first conductive adhesive layer and the second conductive adhesive layer, respectively, characterized in that the first and the second boundary portion are in contact with each other between the plurality of semiconductor light emitting devices, and wherein first semiconductor light emitting devices and second semiconductor light emitting devices included in the plurality of semiconductor light emitting devices are coupled to the first conductive adhesive layer and the second conductive adhesive layer, respectively. a wiring substrate (110, 210, 310, 410, 510, 910) having at least one of a first electrode (120, 220, 320, 420, 520, 620, 720, 920) and a second electrode (140, 240, 340, 440, 540, 640, 740, 940); a conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) configured to cover the wiring substrate (110, 210, 310, 410, 510, 910); and a plurality of semiconductor light emitting devices (150, 250, 350, 450, 550, 950) coupled to the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930), and electrically connected to the first and second electrode, wherein the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) has a first conductive adhesive layer (431, 531, 831, 931) disposed in a first region and a second conductive adhesive layer (432, 532, 832, 932) disposed in a second region adjoining to the first region such that the conductive adhesive layer (130, 230, 330, 430, 530, 630, 730, 830, 930) is partitioned into a plurality of regions on the wiring substrate (110, 210, 310, 410, 510, 910), wherein a boundary portion (431a, 432a, 531a, 532a, 931a, 932a) between the first conductive adhesive layer (431, 531, 931) and the second conductive adhesive layer (432, 532, 932) is formed between the plurality of semiconductor light emitting devices, wherein the boundary portion has a first boundary portion (431a, 531a, 931a) and a second boundary portion (432a, 532a, 932a) formed on the first conductive adhesive layer and the second conductive adhesive layer, respectively, characterized in that the first and the second boundary portion are in contact with each other between the plurality of semiconductor light emitting devices, and wherein first semiconductor light emitting devices and second semiconductor light emitting devices included in the plurality of semiconductor light emitting devices are coupled to the first conductive adhesive layer and the second conductive adhesive layer, respectively.