A range sensor, comprising: a semiconductor substrate; a charge generating region in the semiconductor substrate, wherein the charge generating region generates charge according to incident light and a planar shape of which is a rectangular shape having first and second long sides (LS1, LS2) opposed to each other and first and second short sides (SS1, SS2) opposed to each other; at least a pair of signal charge collecting regions (FD1, FD2) in the semiconductor substrate, which are arranged opposite to each other with the charge generating region in between in a direction in which the first and second long sides (LS1, LS2) are opposed, and which collect signal charge from the charge generating region; transfer electrodes (TX1, TX2) on the semiconductor substrate each of which is arranged between the signal charge collecting region (FD1, FD2) and the charge generating region and to which respective charge transfer signals (S1, S2) of different phases are supplied; and characterized in that the range sensor further comprises potential adjusting means in the semiconductor substrate, which are arranged opposite to each other with the charge generating region in between in a direction in which the first and second short sides (SS1, SS2) are opposed, and which are configured to make a potential on the sides where the first and second short sides (SS1, SS2) of the charge generating region exist, higher than a potential in a region located between at least the pair of signal charge collecting regions (FD1, FD2) in the charge generating region such that the charge generated near the first and second short sides migrates in the direction in which the first and second short sides are opposed, towards the region, wherein the potential adjusting means are semiconductor regions having the same conductivity type (p) as the charge generating region and the semiconductor substrate and a higher impurity concentration than the charge generating region (1A, 1Ab). a semiconductor substrate; a charge generating region in the semiconductor substrate, wherein the charge generating region generates charge according to incident light and a planar shape of which is a rectangular shape having first and second long sides (LS1, LS2) opposed to each other and first and second short sides (SS1, SS2) opposed to each other; at least a pair of signal charge collecting regions (FD1, FD2) in the semiconductor substrate, which are arranged opposite to each other with the charge generating region in between in a direction in which the first and second long sides (LS1, LS2) are opposed, and which collect signal charge from the charge generating region; transfer electrodes (TX1, TX2) on the semiconductor substrate each of which is arranged between the signal charge collecting region (FD1, FD2) and the charge generating region and to which respective charge transfer signals (S1, S2) of different phases are supplied; and characterized in that the range sensor further comprises potential adjusting means in the semiconductor substrate, which are arranged opposite to each other with the charge generating region in between in a direction in which the first and second short sides (SS1, SS2) are opposed, and which are configured to make a potential on the sides where the first and second short sides (SS1, SS2) of the charge generating region exist, higher than a potential in a region located between at least the pair of signal charge collecting regions (FD1, FD2) in the charge generating region such that the charge generated near the first and second short sides migrates in the direction in which the first and second short sides are opposed, towards the region, wherein the potential adjusting means are semiconductor regions having the same conductivity type (p) as the charge generating region and the semiconductor substrate and a higher impurity concentration than the charge generating region (1A, 1Ab).