A light-emitting element comprising: between an anode and a cathode, at least a stack structure including a first layer, a second layer, and a light-emitting layer, wherein the first layer is between the anode and the second layer, the second layer is between the first layer and the light-emitting layer, and the light-emitting layer is between the second layer and the cathode, wherein the first layer comprises a first organic compound having a first hole-transport skeleton and an electron-accepting compound, wherein the second layer comprises a second organic compound having a second hole-transport skeleton, wherein the light-emitting layer comprises a third organic compound having a third hole-transport skeleton and a light-emitting substance having a hole-trapping property with respect to the third organic compound, wherein the first hole-transport skeleton, the second hole-transport skeleton, and the third hole-transport skeleton each separately comprise a skeleton of at least any one of a π excessive heteroaromatic ring, a tricyclic condensed aromatic hydrocarbon ring, and a tetracyclic condensed aromatic hydrocarbon ring, and with the proviso that a light-emitting element, showing: an anode, comprising indium tin oxide containing silicon oxide (ITSO) in a thickness of 110 nm, a first hole injection layer, comprising 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (PCzPA) as a second organic compound, and molybdenum oxide in a weight ratio of 4:2, wherein the thickness of the first hole injection layer is 50 nm, a second hole transport layer, comprising PCzPA as a second organic compound, wherein the thickness of the second hole transport layer is 10 nm, a light-emitting layer, comprising 4-[3-(9-10-diphenyl-2-anthryl)phenyl]-2,8-diphenyldibenzofuran] (2mDBFPPA-III) and [4-(9-phenyl-9H-fluoren-9-yl-phenyl]-N,N-diphenyl-pyrene-1,6-diamine (1,6FLPAPrn) in a weight ratio of 1:0.05, wherein the thickness of the light-emitting layer is 30 nm, an electron transport layer, comprising tris(8-quinolinolato(aluminum (Alq) in a thickness of 10 nm and bathophenanthroline (BPhen) in a thickness of 15 nm, an electron injection layer, comprising LiF in a thickness of 1 nm, and a cathode, comprising aluminum in a thickness of 200 nm, is excluded, characterized in that the light-emmiting substance is a pyrene diamine compound or an iridium complex. between an anode and a cathode, at least a stack structure including a first layer, a second layer, and a light-emitting layer, wherein the first layer is between the anode and the second layer, the second layer is between the first layer and the light-emitting layer, and the light-emitting layer is between the second layer and the cathode, wherein the first layer comprises a first organic compound having a first hole-transport skeleton and an electron-accepting compound, wherein the second layer comprises a second organic compound having a second hole-transport skeleton, wherein the light-emitting layer comprises a third organic compound having a third hole-transport skeleton and a light-emitting substance having a hole-trapping property with respect to the third organic compound, an anode, comprising indium tin oxide containing silicon oxide (ITSO) in a thickness of 110 nm, a first hole injection layer, comprising 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (PCzPA) as a second organic compound, and molybdenum oxide in a weight ratio of 4:2, wherein the thickness of the first hole injection layer is 50 nm, a second hole transport layer, comprising PCzPA as a second organic compound, wherein the thickness of the second hole transport layer is 10 nm, a light-emitting layer, comprising 4-[3-(9-10-diphenyl-2-anthryl)phenyl]-2,8-diphenyldibenzofuran] (2mDBFPPA-III) and [4-(9-phenyl-9H-fluoren-9-yl-phenyl]-N,N-diphenyl-pyrene-1,6-diamine (1,6FLPAPrn) in a weight ratio of 1:0.05, wherein the thickness of the light-emitting layer is 30 nm, an electron transport layer, comprising tris(8-quinolinolato(aluminum (Alq) in a thickness of 10 nm and bathophenanthroline (BPhen) in a thickness of 15 nm, an electron injection layer, comprising LiF in a thickness of 1 nm, and a cathode, comprising aluminum in a thickness of 200 nm,