A memory device, comprising: an array of memory cells in a plurality of memory strings and arranged in a plurality of rows of memory cells; a plurality of word lines respectively coupled to the plurality of rows of memory cells; and a peripheral circuit coupled to the plurality of word lines and configured to perform a read operation on a selected row of memory cells of the plurality of rows of memory cells, the selected row of memory cells being coupled to a selected word line, wherein the peripheral circuit is configured to: apply a word line voltage (V WL) on each of the plurality of word lines; characterized in that the peripheral circuit is configured to: determine a highest threshold voltage of the plurality of rows of memory cells based on a change of a word line capacitance loading in response to the word line voltage (V WL), wherein the word line capacitance loading comprises a variable capacitance, and determining the highest threshold voltage of the plurality of rows of memory cells comprises: determining a maximum capacitance of the variable capacitance; and determining the highest threshold voltage based on the maximum capacitance, wherein the peripheral circuit includes a control logic configured to perform a least one of: determining a time at which the highest threshold voltage is reached, determining a pass voltage applied on an unselected word line of the plurality of word lines in the read Operation based on the highest threshold voltage, or determining a read reference voltage applied on the selected word line based on the highest threshold voltage. an array of memory cells in a plurality of memory strings and arranged in a plurality of rows of memory cells; a plurality of word lines respectively coupled to the plurality of rows of memory cells; and a peripheral circuit coupled to the plurality of word lines and configured to perform a read operation on a selected row of memory cells of the plurality of rows of memory cells, the selected row of memory cells being coupled to a selected word line, wherein the peripheral circuit is configured to: apply a word line voltage (V WL) on each of the plurality of word lines; characterized in that the peripheral circuit is configured to: determine a highest threshold voltage of the plurality of rows of memory cells based on a change of a word line capacitance loading in response to the word line voltage (V WL), wherein the word line capacitance loading comprises a variable capacitance, and determining the highest threshold voltage of the plurality of rows of memory cells comprises: determining a maximum capacitance of the variable capacitance; and determining the highest threshold voltage based on the maximum capacitance, wherein the peripheral circuit includes a control logic configured to perform a least one of: determining a time at which the highest threshold voltage is reached, determining a pass voltage applied on an unselected word line of the plurality of word lines in the read Operation based on the highest threshold voltage, or determining a read reference voltage applied on the selected word line based on the highest threshold voltage. apply a word line voltage (V WL) on each of the plurality of word lines; characterized in that the peripheral circuit is configured to: determine a highest threshold voltage of the plurality of rows of memory cells based on a change of a word line capacitance loading in response to the word line voltage (V WL), wherein the word line capacitance loading comprises a variable capacitance, and determining the highest threshold voltage of the plurality of rows of memory cells comprises: determining a maximum capacitance of the variable capacitance; and determining the highest threshold voltage based on the maximum capacitance, wherein the peripheral circuit includes a control logic configured to perform a least one of: determining a time at which the highest threshold voltage is reached, determining a pass voltage applied on an unselected word line of the plurality of word lines in the read Operation based on the highest threshold voltage, or determining a read reference voltage applied on the selected word line based on the highest threshold voltage. determining a maximum capacitance of the variable capacitance; and determining the highest threshold voltage based on the maximum capacitance, wherein the peripheral circuit includes a control logic configured to perform a least one of: determining a time at which the highest threshold voltage is reached, determining a pass voltage applied on an unselected word line of the plurality of word lines in the read Operation based on the highest threshold voltage, or determining a read reference voltage applied on the selected word line based on the highest threshold voltage. determining a time at which the highest threshold voltage is reached, determining a pass voltage applied on an unselected word line of the plurality of word lines in the read Operation based on the highest threshold voltage, or determining a read reference voltage applied on the selected word line based on the highest threshold voltage.