A method for producing an optoelectronic device comprising nitride-based microlight-emitting diodes (micro-LEDs), the method comprising the following steps: a) providing an assembly comprising at least: - a growth substrate including at least one crystalline layer, the crystalline layer comprising a plurality of parallel grooves, each groove comprising at least two opposite inclined facets (132, 133) each forming a continuous strip, at least one of said two opposite facets having a crystal orientation; - a nitride structure made at least in part of a nitride obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), the nitride structure comprising: ∘ a semi-polar nitride layer, having a first face facing the crystalline layer, the semi-polar nitride layer including a stack comprising at least first and second doped semiconductor layers of opposite conductivity types, ∘ crystallites extending from said facets having a crystal orientation and up to the first face of the semi-polar nitride layer, b) providing a control circuit having a front face including, or electrically connected to, a plurality of electrical connection pads, c) attaching the assembly to the front face of the control circuit so that the second layer of the stack is electrically connected to the electrical connection pads of the control circuit, d) removing the growth substrate by separating the crystallites from the facets having a crystal orientation, e) removing the crystallites, f) forming in the stack trenches so as to delimit a plurality of islands each intended to form a micro-LED and each connected to at least one electrical connection pad of the control circuit. a) providing an assembly comprising at least: - a growth substrate including at least one crystalline layer, the crystalline layer comprising a plurality of parallel grooves, each groove comprising at least two opposite inclined facets (132, 133) each forming a continuous strip, at least one of said two opposite facets having a crystal orientation; - a nitride structure made at least in part of a nitride obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), the nitride structure comprising: ∘ a semi-polar nitride layer, having a first face facing the crystalline layer, the semi-polar nitride layer including a stack comprising at least first and second doped semiconductor layers of opposite conductivity types, ∘ crystallites extending from said facets having a crystal orientation and up to the first face of the semi-polar nitride layer, - a growth substrate including at least one crystalline layer, the crystalline layer comprising a plurality of parallel grooves, each groove comprising at least two opposite inclined facets (132, 133) each forming a continuous strip, at least one of said two opposite facets having a crystal orientation; - a nitride structure made at least in part of a nitride obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), the nitride structure comprising: ∘ a semi-polar nitride layer, having a first face facing the crystalline layer, the semi-polar nitride layer including a stack comprising at least first and second doped semiconductor layers of opposite conductivity types, ∘ crystallites extending from said facets having a crystal orientation and up to the first face of the semi-polar nitride layer, ∘ a semi-polar nitride layer, having a first face facing the crystalline layer, the semi-polar nitride layer including a stack comprising at least first and second doped semiconductor layers of opposite conductivity types, ∘ crystallites extending from said facets having a crystal orientation and up to the first face of the semi-polar nitride layer, b) providing a control circuit having a front face including, or electrically connected to, a plurality of electrical connection pads, c) attaching the assembly to the front face of the control circuit so that the second layer of the stack is electrically connected to the electrical connection pads of the control circuit, d) removing the growth substrate by separating the crystallites from the facets having a crystal orientation, e) removing the crystallites, f) forming in the stack trenches so as to delimit a plurality of islands each intended to form a micro-LED and each connected to at least one electrical connection pad of the control circuit.