A power semiconductor device comprising a semiconductor body, a gate electrode, a source electrode and an extraction electrode, the gate electrode is separated from the semiconductor body by a gate insulator which is electrically insulating, wherein the semiconductor body comprises: - a source region of a first conductivity type in electrical contact with the source electrode and in direct contact with the gate insulator, - a well region of a second conductivity type different from the first conductivity type in direct contact with the gate insulator and in direct contact with the source region, - a drift region which is of the first conductivity type that electrically follows the well region at a side remote from the source region and is in direct contact with the gate insulator, - an extraction region in direct contact with the extraction electrode which is of the second conductivity type, and - a barrier region assigned to the extraction electrode which is of the first conductivity type, the barrier region is located directly between the drift region and the extraction electrode so that the extraction region is located between the barrier region and the extraction electrode and is surrounded all around by the barrier region which forms a well the extraction region is located in, and the barrier region is distant from the gate insulator, wherein the well region and the extraction region have the same maximum doping concentrations and/or the same doping depth profile, wherein the semiconductor body further comprises a deep doping region which is of the second conductivity type, the deep doping region is located between the barrier region and at least part of the drift region, a depth of the deep doping region into the semiconductor body exceeds a depth of the well region, and wherein a bottom side of the barrier region is at least partially free of the deep doping region. - a source region of a first conductivity type in electrical contact with the source electrode and in direct contact with the gate insulator, - a well region of a second conductivity type different from the first conductivity type in direct contact with the gate insulator and in direct contact with the source region, - a drift region which is of the first conductivity type that electrically follows the well region at a side remote from the source region and is in direct contact with the gate insulator, - an extraction region in direct contact with the extraction electrode which is of the second conductivity type, and - a barrier region assigned to the extraction electrode which is of the first conductivity type, the barrier region is located directly between the drift region and the extraction electrode so that the extraction region is located between the barrier region and the extraction electrode and is surrounded all around by the barrier region which forms a well the extraction region is located in, and the barrier region is distant from the gate insulator, wherein the well region and the extraction region have the same maximum doping concentrations and/or the same doping depth profile, wherein the semiconductor body further comprises a deep doping region which is of the second conductivity type, the deep doping region is located between the barrier region and at least part of the drift region, a depth of the deep doping region into the semiconductor body exceeds a depth of the well region, and wherein a bottom side of the barrier region is at least partially free of the deep doping region. wherein the well region and the extraction region have the same maximum doping concentrations and/or the same doping depth profile, wherein the semiconductor body further comprises a deep doping region which is of the second conductivity type, the deep doping region is located between the barrier region and at least part of the drift region, a depth of the deep doping region into the semiconductor body exceeds a depth of the well region, and wherein a bottom side of the barrier region is at least partially free of the deep doping region.