A radiofrequency, `RF', power amplifier package, comprising: a package; a first semiconductor die arranged inside said package and provided with an RF power transistor, said RF power transistor having an output capacitance (Cds) and being configured to amplify signals at an operational frequency; an impedance network arranged inside the package and comprising: a first inductive element having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit being electrically connected to the second terminal of the first inductive element; a second capacitive element electrically connected in between the resonance unit and ground; wherein the resonance unit comprises a second inductive element electrically connected in between the second capacitive element and the first inductive element, and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element being electrically connected to the second terminal of the first inductive element; wherein the capacitance of the second capacitive element is larger than the capacitance of the first capacitive element; wherein the second terminal of the first capacitive element is electrically connected to the second capacitive element; characterized in that the second capacitive element is integrated on a second die, preferably a semiconductor die, said second die being arranged inside the package, wherein the second capacitive element comprises a deep trench capacitor; and in that the first semiconductor die and the second die are elongated in a first direction, wherein the deep trench capacitor comprises a plurality of trenches extending in the second die, a second dielectric arranged inside the trenches, a top electrode arranged over the second dielectric, and a metal contact layer arranged on the top electrode, wherein the metal contact layer comprises a plurality of slots along the first direction. a package; a first semiconductor die arranged inside said package and provided with an RF power transistor, said RF power transistor having an output capacitance (Cds) and being configured to amplify signals at an operational frequency; an impedance network arranged inside the package and comprising: a first inductive element having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit being electrically connected to the second terminal of the first inductive element; a second capacitive element electrically connected in between the resonance unit and ground; a first inductive element having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit being electrically connected to the second terminal of the first inductive element; a second capacitive element electrically connected in between the resonance unit and ground; wherein the resonance unit comprises a second inductive element electrically connected in between the second capacitive element and the first inductive element, and a first capacitive element having a first and second terminal, the first terminal of the first capacitive element being electrically connected to the second terminal of the first inductive element; wherein the capacitance of the second capacitive element is larger than the capacitance of the first capacitive element; wherein the second terminal of the first capacitive element is electrically connected to the second capacitive element; characterized in that the second capacitive element is integrated on a second die, preferably a semiconductor die, said second die being arranged inside the package, wherein the second capacitive element comprises a deep trench capacitor; and in that the first semiconductor die and the second die are elongated in a first direction, wherein the deep trench capacitor comprises a plurality of trenches extending in the second die, a second dielectric arranged inside the trenches, a top electrode arranged over the second dielectric, and a metal contact layer arranged on the top electrode, wherein the metal contact layer comprises a plurality of slots along the first direction.