A method of making a semiconductor device, comprising: providing a semiconductor wafer comprising a plurality of semiconductor die; forming a plurality of pillar bumps on the semiconductor wafer; forming a solder cap on each of the pillar bumps; forming a trench between the semiconductor die extending only partially through the wafer; disposing the semiconductor wafer on a first carrier with the pillar bumps oriented toward the first carrier after forming the pillar bumps, forming the solder cap, and forming the trench; singulating the semiconductor wafer into the plurality of semiconductor die while the semiconductor wafer is on the first carrier, wherein singulating the semiconductor wafer includes backgrinding the semiconductor wafer; depositing an encapsulant over the first carrier, and around the plurality of semiconductor die, the pillar bumps, and the solder caps while the solder caps physically contact the first carrier, wherein the encapsulant comprises an electrically insulating material, the encapsulant covers side surfaces, an active surface, and a back surface of the plurality of semiconductor die, and the encapsulant extends completely around each pillar bump while leaving the surface facing the first carrier of each solder cap exposed from the encapsulant; removing the plurality of semiconductor die from the first carrier after depositing the encapsulant wherein the surfaces of the pillar bumps are exposed from the encapsulant; disposing the plurality of die and encapsulant on a thermal or UV release tape disposed on a second carrier after removing the plurality of semiconductor die from the first carrier; and singulating the plurality of semiconductor die by cutting through the encapsulant while the plurality of semiconductor die are on the second carrier. providing a semiconductor wafer comprising a plurality of semiconductor die; forming a plurality of pillar bumps on the semiconductor wafer; forming a solder cap on each of the pillar bumps; forming a trench between the semiconductor die extending only partially through the wafer; disposing the semiconductor wafer on a first carrier with the pillar bumps oriented toward the first carrier after forming the pillar bumps, forming the solder cap, and forming the trench; singulating the semiconductor wafer into the plurality of semiconductor die while the semiconductor wafer is on the first carrier, wherein singulating the semiconductor wafer includes backgrinding the semiconductor wafer; depositing an encapsulant over the first carrier, and around the plurality of semiconductor die, the pillar bumps, and the solder caps while the solder caps physically contact the first carrier, wherein the encapsulant comprises an electrically insulating material, the encapsulant covers side surfaces, an active surface, and a back surface of the plurality of semiconductor die, and the encapsulant extends completely around each pillar bump while leaving the surface facing the first carrier of each solder cap exposed from the encapsulant; the encapsulant comprises an electrically insulating material, the encapsulant covers side surfaces, an active surface, and a back surface of the plurality of semiconductor die, and the encapsulant extends completely around each pillar bump while leaving the surface facing the first carrier of each solder cap exposed from the encapsulant; removing the plurality of semiconductor die from the first carrier after depositing the encapsulant wherein the surfaces of the pillar bumps are exposed from the encapsulant; disposing the plurality of die and encapsulant on a thermal or UV release tape disposed on a second carrier after removing the plurality of semiconductor die from the first carrier; and singulating the plurality of semiconductor die by cutting through the encapsulant while the plurality of semiconductor die are on the second carrier.