A manufacturing method of a semiconductor chip, wherein the manufacturing method comprises: providing a substrate; forming a first patterned block layer on the substrate; removing a part of the substrate, through the first patterned block layer, to form a fin (125, 225, 325), wherein the fin (125, 225, 325) comprises a base portion and a protrusion (1252, 2252, 3252) connected with the base portion, the protrusion (1252, 2252, 3252) is projected with respect to an upper surface of the base portion; forming a second patterned block layer covering the upper surface of the base portion, wherein the second patterned block layer has a hollow portion exposing the protrusion (1252, 2252, 3252); thinning the protrusion (1252, 2252, 3252) through the hollow portion, thereby forming a recess, and the recess (1252r, 2252r, 3252r) is recessed with respect to the upper surface of the base portion; removing the second patterned block layer; and forming an insulation layer covering the base portion and the protrusion (1252, 2252, 3252), wherein the protrusion (1252,2252, 3252) is projected with respect to the insulation layer, wherein in step of removing the part of the substrate, a plurality of the fins (125, 225, 325) are formed, wherein the fins (125, 225, 325) comprises a plurality of edge fins (125, 225, 325) and an inner fin (125, 225, 325) located between the fins (125, 225, 325) and wherein a width of the inner fin (125, 225, 325) is thinner than a width (W1') of the edge fins (125, 225, 325); in step of forming the second patterned block layer covering the upper surface of the base portion, the second patterned block layer has a plurality of the hollow portions, the edge fins (125, 225, 325) are exposed from the hollow portions; and in step of thinning the fin (125, 225, 325) through the hollow portion, the protrusions (1252, 2252, 3252) of the edge fins (125, 225, 325) are thinned through the hollow portions. providing a substrate; forming a first patterned block layer on the substrate; removing a part of the substrate, through the first patterned block layer, to form a fin (125, 225, 325), wherein the fin (125, 225, 325) comprises a base portion and a protrusion (1252, 2252, 3252) connected with the base portion, the protrusion (1252, 2252, 3252) is projected with respect to an upper surface of the base portion; forming a second patterned block layer covering the upper surface of the base portion, wherein the second patterned block layer has a hollow portion exposing the protrusion (1252, 2252, 3252); thinning the protrusion (1252, 2252, 3252) through the hollow portion, thereby forming a recess, and the recess (1252r, 2252r, 3252r) is recessed with respect to the upper surface of the base portion; removing the second patterned block layer; and forming an insulation layer covering the base portion and the protrusion (1252, 2252, 3252), wherein the protrusion (1252,2252, 3252) is projected with respect to the insulation layer, wherein in step of removing the part of the substrate, a plurality of the fins (125, 225, 325) are formed, wherein the fins (125, 225, 325) comprises a plurality of edge fins (125, 225, 325) and an inner fin (125, 225, 325) located between the fins (125, 225, 325) and wherein a width of the inner fin (125, 225, 325) is thinner than a width (W1') of the edge fins (125, 225, 325); in step of forming the second patterned block layer covering the upper surface of the base portion, the second patterned block layer has a plurality of the hollow portions, the edge fins (125, 225, 325) are exposed from the hollow portions; and in step of thinning the fin (125, 225, 325) through the hollow portion, the protrusions (1252, 2252, 3252) of the edge fins (125, 225, 325) are thinned through the hollow portions.