A light emitting device comprising: a support layer; a first electrode layer on the support layer; a light emitting semiconductor layer comprising a second conductive semiconductor layer on the first electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; a second electrode layer on the first conductive semiconductor layer; a first passivation layer which surrounds the light emitting semiconductor layer; and a second passivation layer which surrounds the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa, wherein the first passivation layer comprises inorganic material and the second passivation layer comprises organic material, and the adhesion strength between the first passivation layer and the second passivation layer is 40MPa to 1000Mpa, characterized in that the first passivation layer contacts a portion of a lower surface of the first electrode layer and the second passivation layer has a first region that contacts a lower surface of the first passivation layer and a second region that contacts a lateral surface of the first passivation layer, the second region of the second passivation layer having a lateral surface and a top surface exposed to the outside and the first region of the second passivation layer being disposed between the support layer and the lower surface of the first electrode layer, and wherein the first conductive semiconductor layer has a light extraction structure thereon, the light extraction structure having a downwardly-recessed groove including a plurality of protrusions, the second electrode layer having a lower surface that contacts the plurality of protrusions of the groove and is lower than a top surface of the first conductive semiconductor layer. a support layer; a first electrode layer on the support layer; a light emitting semiconductor layer comprising a second conductive semiconductor layer on the first electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; a second electrode layer on the first conductive semiconductor layer; a first passivation layer which surrounds the light emitting semiconductor layer; and a second passivation layer which surrounds the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa, wherein the first passivation layer comprises inorganic material and the second passivation layer comprises organic material, and the adhesion strength between the first passivation layer and the second passivation layer is 40MPa to 1000Mpa, characterized in that the first passivation layer contacts a portion of a lower surface of the first electrode layer and the second passivation layer has a first region that contacts a lower surface of the first passivation layer and a second region that contacts a lateral surface of the first passivation layer, the second region of the second passivation layer having a lateral surface and a top surface exposed to the outside and the first region of the second passivation layer being disposed between the support layer and the lower surface of the first electrode layer, and wherein the first conductive semiconductor layer has a light extraction structure thereon, the light extraction structure having a downwardly-recessed groove including a plurality of protrusions, the second electrode layer having a lower surface that contacts the plurality of protrusions of the groove and is lower than a top surface of the first conductive semiconductor layer.