A multi-die integrated circuit assembly, comprising: a substrate having a plurality of interconnect conductors; an interposer substrate disposed above the substrate, the interposer substrate consisting of a centrally positioned first portion and a second portion adjacent the first portion, the first portion comprising a plurality of through-silicon vias and a plurality of interconnect conductors; a first plurality of connections electrically coupling the interconnect conductors of the substrate with the plurality of through-silicon vias; a plurality of integrated circuit dies (212a, 212b, 212c, 212d) disposed above the interposer substrate and laterally adjacent from each other, each die in electrical contact with one or more of the plurality of through-silicon vias, wherein the through-silicon vias are adapted to serve as interconnects between the dies and the substrate; a second plurality of connections electrically coupling each of the plurality of through-silicon vias with each of the plurality of dies (212a, 212b, 212c, 212d), respectively; and wherein at least a portion of one of the plurality of dies extends beyond a periphery of the first portion of the interposer substrate; characterised in that: the second portion has an absence of through-hole silicon vias and interconnect conductors; and a support member is disposed on the second portion of the interposer substrate and configured for supporting the portion of one of the plurality of dies extending beyond the first portion of the interposer substrate. a substrate having a plurality of interconnect conductors; an interposer substrate disposed above the substrate, the interposer substrate consisting of a centrally positioned first portion and a second portion adjacent the first portion, the first portion comprising a plurality of through-silicon vias and a plurality of interconnect conductors; a first plurality of connections electrically coupling the interconnect conductors of the substrate with the plurality of through-silicon vias; a plurality of integrated circuit dies (212a, 212b, 212c, 212d) disposed above the interposer substrate and laterally adjacent from each other, each die in electrical contact with one or more of the plurality of through-silicon vias, wherein the through-silicon vias are adapted to serve as interconnects between the dies and the substrate; a second plurality of connections electrically coupling each of the plurality of through-silicon vias with each of the plurality of dies (212a, 212b, 212c, 212d), respectively; and wherein at least a portion of one of the plurality of dies extends beyond a periphery of the first portion of the interposer substrate; characterised in that: the second portion has an absence of through-hole silicon vias and interconnect conductors; and a support member is disposed on the second portion of the interposer substrate and configured for supporting the portion of one of the plurality of dies extending beyond the first portion of the interposer substrate. the second portion has an absence of through-hole silicon vias and interconnect conductors; and a support member is disposed on the second portion of the interposer substrate and configured for supporting the portion of one of the plurality of dies extending beyond the first portion of the interposer substrate.