A display device, comprising: a first electrode of a -th subpixel (PXL1-1), a first electrode of a -th subpixel (PXL1-2), a first electrode of a -th subpixel (PXL2-1), and a first electrode of a -th subpixel (PXL2-2); a -th welding electrode (WE1-1) connected to the first electrode of the -th subpixel (PXL1-1), a -th welding electrode (WE1-2) connected to the first electrode of the -th subpixel (PXL1-2), a -th welding electrode (WE2-1) connected to the first electrode of the -th subpixel (PXL2-1), and a -th welding electrode (WE2-2) connected to the first electrode of the -th subpixel (PXL2-2); a first repair line overlapping the -th welding electrode (WE1-1) and the -th welding electrode (WE2-1) and a second repair line overlapping the -th welding electrode (WE1-2) and the -th welding electrode (WE2-2), wherein the first repair line and the second repair line are disposed on different layers with at least one insulating layer interposed therebetween; a substrate; a light shielding layer positioned over the substrate; a buffer layer positioned over the light shielding layer; a semiconductor layer positioned over the buffer layer; an interlayer dielectric layer positioned over the semiconductor layer; a source electrode and a drain electrode over the interlayer dielectric layer; a passivation film positioned over the source electrode and the drain electrode; and an overcoat layer positioned over the passivation film, wherein the first electrode of the -th subpixel (PXL1-1), the first electrode of the -th subpixel (PXL1-2), the first electrode of the -th subpixel (PXL2-1), the first electrode of the -th subpixel (PXL2-2), the -th welding electrode (WE1-1), the -th welding electrode (WE1-2), the -th welding electrode (WE2-1), and the -th welding electrode (WE2-2) are disposed over the overcoat layer, the first repair line is positioned in a layer identical with a layer of the source electrode and the drain electrode over the interlayer dielectric layer, and the second repair line is positioned in a layer identical with a layer of the light shielding layer over the substrate. a first electrode of a -th subpixel (PXL1-1), a first electrode of a -th subpixel (PXL1-2), a first electrode of a -th subpixel (PXL2-1), and a first electrode of a -th subpixel (PXL2-2); a -th welding electrode (WE1-1) connected to the first electrode of the -th subpixel (PXL1-1), a -th welding electrode (WE1-2) connected to the first electrode of the -th subpixel (PXL1-2), a -th welding electrode (WE2-1) connected to the first electrode of the -th subpixel (PXL2-1), and a -th welding electrode (WE2-2) connected to the first electrode of the -th subpixel (PXL2-2); a first repair line overlapping the -th welding electrode (WE1-1) and the -th welding electrode (WE2-1) and a second repair line overlapping the -th welding electrode (WE1-2) and the -th welding electrode (WE2-2), wherein the first repair line and the second repair line are disposed on different layers with at least one insulating layer interposed therebetween; a substrate; a light shielding layer positioned over the substrate; a buffer layer positioned over the light shielding layer; a semiconductor layer positioned over the buffer layer; an interlayer dielectric layer positioned over the semiconductor layer; a source electrode and a drain electrode over the interlayer dielectric layer; a passivation film positioned over the source electrode and the drain electrode; and an overcoat layer positioned over the passivation film, wherein the first electrode of the -th subpixel (PXL1-1), the first electrode of the -th subpixel (PXL1-2), the first electrode of the -th subpixel (PXL2-1), the first electrode of the -th subpixel (PXL2-2), the -th welding electrode (WE1-1), the -th welding electrode (WE1-2), the -th welding electrode (WE2-1), and the -th welding electrode (WE2-2) are disposed over the overcoat layer, the first repair line is positioned in a layer identical with a layer of the source electrode and the drain electrode over the interlayer dielectric layer, and the second repair line is positioned in a layer identical with a layer of the light shielding layer over the substrate.