Optoelectronic semiconductor chip with an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN or InAlGaN, comprising: - a p-doped layer sequence, - an n-doped layer sequence, - an active zone which is configured for generating an electromagnetic radiation and which is located between the p-doped layer sequence and the n-doped layer sequence, and - two intermediate layers (5a, 5b) based on Al x Ga 1-x N and located on the same side of the active zone such as the n-doped layer sequence and adjoining on both sides to GaN layers which have no Al content, wherein - a first one of the intermediate layers is an uninterrupted, continuous layer, - a second one of the intermediate layers is arranged between the first one of the intermediate layers and the active zone and at least one electrical through-connection runs through the active zone and the second one of the intermediate layers so that all electric contacts for supplying current to the semiconductor chip are located on only one side of the active zone, and there is no current flow through the first one of the intermediate layers so that the active zone is supplied with current not through the first one of the intermediate layers, whereas a flow of current through the second one of the intermediate layers takes place, characterized in that - the semiconductor layer sequence comprises exactly two of the intermediate layers (5a, 5b) based on Al x Ga 1-x N, - the intermediate layers (5a, 5b) based on Al x Ga 1-x N have an aluminum content x for which 0.03 < x ≤ 0.5 applies, - the intermediate layers (5a, 5b) each have a thickness of between 15 nm and 250 nm inclusive, and - the intermediate layers (5a, 5b) each have a specific chemical permeability to nitric acid which is lower than for layers of the semiconductor layer sequence adjoining the intermediate layers (5a, 5b). - a p-doped layer sequence, - an n-doped layer sequence, - an active zone which is configured for generating an electromagnetic radiation and which is located between the p-doped layer sequence and the n-doped layer sequence, and - two intermediate layers (5a, 5b) based on Al x Ga 1-x N and located on the same side of the active zone such as the n-doped layer sequence and adjoining on both sides to GaN layers which have no Al content, wherein - a first one of the intermediate layers is an uninterrupted, continuous layer, - a second one of the intermediate layers is arranged between the first one of the intermediate layers and the active zone and at least one electrical through-connection runs through the active zone and the second one of the intermediate layers so that all electric contacts for supplying current to the semiconductor chip are located on only one side of the active zone, and there is no current flow through the first one of the intermediate layers so that the active zone is supplied with current not through the first one of the intermediate layers, whereas a flow of current through the second one of the intermediate layers takes place, characterized in that - the semiconductor layer sequence comprises exactly two of the intermediate layers (5a, 5b) based on Al x Ga 1-x N, - the intermediate layers (5a, 5b) based on Al x Ga 1-x N have an aluminum content x for which 0.03 < x ≤ 0.5 applies, - the intermediate layers (5a, 5b) each have a thickness of between 15 nm and 250 nm inclusive, and - the intermediate layers (5a, 5b) each have a specific chemical permeability to nitric acid which is lower than for layers of the semiconductor layer sequence adjoining the intermediate layers (5a, 5b).