A semiconductor device, comprising: a semiconductor substrate having a first conductivity type and a top substrate surface; a buried layer below the top substrate surface, wherein the buried layer has a second conductivity type that is different from the first conductivity type;: a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; and an active device (1462, 1463, 1500, 1600, 1700, 1800, 1900, 2000) in the semiconductor substrate within a portion of the substrate contained by the isolation structure, wherein the active device includes: a drift region of the first conductivity type extending from the top substrate surface into the semiconductor substrate, a drain region of the first conductivity type extending into the drift region from the top substrate surface, a body region of the second conductivity type extending from the top substrate surface into the semiconductor substrate between the drift region and the isolation structure, wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type, and a source region of the first conductivity type extending into the body region from the top substrate surface; and a resistor circuit (1546, 1646, 1746, 1846, 1946, 2046) connected between the isolation structure and the body region. a semiconductor substrate having a first conductivity type and a top substrate surface; a buried layer below the top substrate surface, wherein the buried layer has a second conductivity type that is different from the first conductivity type;: a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; and an active device (1462, 1463, 1500, 1600, 1700, 1800, 1900, 2000) in the semiconductor substrate within a portion of the substrate contained by the isolation structure, wherein the active device includes: a drift region of the first conductivity type extending from the top substrate surface into the semiconductor substrate, a drain region of the first conductivity type extending into the drift region from the top substrate surface, a body region of the second conductivity type extending from the top substrate surface into the semiconductor substrate between the drift region and the isolation structure, wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type, and a source region of the first conductivity type extending into the body region from the top substrate surface; and a resistor circuit (1546, 1646, 1746, 1846, 1946, 2046) connected between the isolation structure and the body region. a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer; and an active device (1462, 1463, 1500, 1600, 1700, 1800, 1900, 2000) in the semiconductor substrate within a portion of the substrate contained by the isolation structure, wherein the active device includes: a drift region of the first conductivity type extending from the top substrate surface into the semiconductor substrate, a drain region of the first conductivity type extending into the drift region from the top substrate surface, a body region of the second conductivity type extending from the top substrate surface into the semiconductor substrate between the drift region and the isolation structure, wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type, and a source region of the first conductivity type extending into the body region from the top substrate surface; and a resistor circuit (1546, 1646, 1746, 1846, 1946, 2046) connected between the isolation structure and the body region. a drift region of the first conductivity type extending from the top substrate surface into the semiconductor substrate, a drain region of the first conductivity type extending into the drift region from the top substrate surface, a body region of the second conductivity type extending from the top substrate surface into the semiconductor substrate between the drift region and the isolation structure, wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type, and a source region of the first conductivity type extending into the body region from the top substrate surface; and a resistor circuit (1546, 1646, 1746, 1846, 1946, 2046) connected between the isolation structure and the body region.