A vapor deposition apparatus (100, 200, 300, 400) for forming a deposition layer on a substrate, the vapor deposition apparatus (100, 200, 300, 400) comprising: a supply unit configured to receive a first source gas; a reaction space (103, 203, 303, 403) connected to the supply unit, the supply unit being further configured to input, to the reaction space (103, 203, 303, 403), the first source gas; a plasma generator (111, 211, 311, 411) in the reaction space (103, 203, 303, 403), the plasma generator (111, 211, 311, 411) being configured to generated plasma between the plasma generator (111, 211, 311, 411) and a corresponding surface of the reaction space (103, 203, 303, 403) such that at least some portion of the first source gas that is input to the reaction space (103, 203, 303, 403) is changed to a radical status; a first injection unit (142, 242, 342, 442) connected to the reaction space (103, 203, 303, 403) and configured to inject a deposition source material to the substrate disposed to correspond to the first injection unit (142, 242, 342, 442), the deposition source material including the first source gas changed to the radical status; and a filament unit (130, 230, 330, 430) in the reaction space (130, 230, 330, 430), the filament unit (130, 230, 330, 40) being connected to a power source and being formed of a material having a high electron emission coefficient such that heat and thermal electrons generated in the filament unit in response to application of a voltage facilitate a process in which the source gas that is input to the reaction space (103, 203, 303, 403) is changed to the radical status characterized in that the plasma generator (111,211,311,411) has a hollow column shape, the filament unit (130, 230, 330, 430) being inside the hollow column shape of the plasma generator (111, 211, 311, 411). a supply unit configured to receive a first source gas; a reaction space (103, 203, 303, 403) connected to the supply unit, the supply unit being further configured to input, to the reaction space (103, 203, 303, 403), the first source gas; a plasma generator (111, 211, 311, 411) in the reaction space (103, 203, 303, 403), the plasma generator (111, 211, 311, 411) being configured to generated plasma between the plasma generator (111, 211, 311, 411) and a corresponding surface of the reaction space (103, 203, 303, 403) such that at least some portion of the first source gas that is input to the reaction space (103, 203, 303, 403) is changed to a radical status; a first injection unit (142, 242, 342, 442) connected to the reaction space (103, 203, 303, 403) and configured to inject a deposition source material to the substrate disposed to correspond to the first injection unit (142, 242, 342, 442), the deposition source material including the first source gas changed to the radical status; and a filament unit (130, 230, 330, 430) in the reaction space (130, 230, 330, 430), the filament unit (130, 230, 330, 40) being connected to a power source and being formed of a material having a high electron emission coefficient such that heat and thermal electrons generated in the filament unit in response to application of a voltage facilitate a process in which the source gas that is input to the reaction space (103, 203, 303, 403) is changed to the radical status characterized in that the plasma generator (111,211,311,411) has a hollow column shape, the filament unit (130, 230, 330, 430) being inside the hollow column shape of the plasma generator (111, 211, 311, 411).