A power converter comprising: a semiconductor switch structured to allow electric current to flow in forward conduction from a source to a drain in a channel while the switch is turned on, in reverse conduction from the drain to the source in the channel while the switch is turned on, and in reverse conduction from the drain to the source by way of an intrinsic body diode while the switch is turned off; a voltage sensor, a current sensor, and a converter control system including a processing device and a non-transitory computer readable medium storing instructions executable by the processing device to: turn on the semiconductor switch, measure a first voltage of the turned-on semiconductor switch and a current of the turned-on semiconductor switch during reverse conduction, estimate a junction temperature of the semiconductor switch using the first voltage measurement and the current measurement, turn off the semiconductor switch, measure a second voltage of the turned-off semiconductor switch after turning off the semiconductor switch, determine a resistance value using the second voltage measurement, determine an expected resistance value using the junction temperature and the second voltage measurement, predict a failure of the semiconductor switch using the resistance value and the expected resistance value, and actuate an alarm or transmit a warning in response to predicting the failure of the semiconductor switch. a semiconductor switch structured to allow electric current to flow in forward conduction from a source to a drain in a channel while the switch is turned on, in reverse conduction from the drain to the source in the channel while the switch is turned on, and in reverse conduction from the drain to the source by way of an intrinsic body diode while the switch is turned off; a voltage sensor, a current sensor, and a converter control system including a processing device and a non-transitory computer readable medium storing instructions executable by the processing device to: turn on the semiconductor switch, measure a first voltage of the turned-on semiconductor switch and a current of the turned-on semiconductor switch during reverse conduction, estimate a junction temperature of the semiconductor switch using the first voltage measurement and the current measurement, turn off the semiconductor switch, measure a second voltage of the turned-off semiconductor switch after turning off the semiconductor switch, determine a resistance value using the second voltage measurement, determine an expected resistance value using the junction temperature and the second voltage measurement, predict a failure of the semiconductor switch using the resistance value and the expected resistance value, and actuate an alarm or transmit a warning in response to predicting the failure of the semiconductor switch. turn on the semiconductor switch, measure a first voltage of the turned-on semiconductor switch and a current of the turned-on semiconductor switch during reverse conduction, estimate a junction temperature of the semiconductor switch using the first voltage measurement and the current measurement, turn off the semiconductor switch, measure a second voltage of the turned-off semiconductor switch after turning off the semiconductor switch, determine a resistance value using the second voltage measurement, determine an expected resistance value using the junction temperature and the second voltage measurement, predict a failure of the semiconductor switch using the resistance value and the expected resistance value, and actuate an alarm or transmit a warning in response to predicting the failure of the semiconductor switch.