A charge-coupled device comprising: a semiconductor substrate including a plurality of pixel regions aligned in one direction; and an insulation film provided on the semiconductor substrate, wherein each pixel region includes a photoelectric conversion region which performs photoelectric conversion on an incident energy beam, a potential inclination forming means for forming a potential inclination which promotes a transfer of charges in the one direction in the photoelectric conversion region, a first transfer electrode provided on the insulation film, a second transfer electrode provided on the insulation film and disposed between the first transfer electrode and a pixel region adjacent to the pixel region in the one direction, a barrier region positioned directly beneath the first transfer electrode in the semiconductor substrate, and a charge accumulation region positioned directly beneath the second transfer electrode in the semiconductor substrate, an impurity concentration of the barrier region is lower than an impurity concentration of the charge accumulation region, and the first transfer electrode and the second transfer electrode are electrically connected to each other, characterized in that the potential inclination forming means is a resistive gate electrode provided on the insulation film on the photoelectric conversion region, and is configured to apply a predetermined fixed voltage between the ends of the resistive gate electrode in the one direction, and in that the charge-coupled device further comprises a potential barrier region having a lower impurity concentration than the photoelectric conversion region and being formed between the charge accumulation region in one of the pixel regions and the photoelectric conversion region in another one of the pixel regions adjacent to a rear stage of the one of the pixel regions in the one direction. a semiconductor substrate including a plurality of pixel regions aligned in one direction; and an insulation film provided on the semiconductor substrate, wherein each pixel region includes a photoelectric conversion region which performs photoelectric conversion on an incident energy beam, a potential inclination forming means for forming a potential inclination which promotes a transfer of charges in the one direction in the photoelectric conversion region, a first transfer electrode provided on the insulation film, a second transfer electrode provided on the insulation film and disposed between the first transfer electrode and a pixel region adjacent to the pixel region in the one direction, a barrier region positioned directly beneath the first transfer electrode in the semiconductor substrate, and a charge accumulation region positioned directly beneath the second transfer electrode in the semiconductor substrate, an impurity concentration of the barrier region is lower than an impurity concentration of the charge accumulation region, and the first transfer electrode and the second transfer electrode are electrically connected to each other, characterized in that the potential inclination forming means is a resistive gate electrode provided on the insulation film on the photoelectric conversion region, and is configured to apply a predetermined fixed voltage between the ends of the resistive gate electrode in the one direction, and in that the charge-coupled device further comprises a potential barrier region having a lower impurity concentration than the photoelectric conversion region and being formed between the charge accumulation region in one of the pixel regions and the photoelectric conversion region in another one of the pixel regions adjacent to a rear stage of the one of the pixel regions in the one direction.