A light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a transparent electrode layer on the second conductive semiconductor layer; and a second electrode on the transparent electrode layer, wherein the second electrode is anchored to the transparent electrode layer, wherein the transparent electrode layer includes a first transparent electrode layer on the second conductive semiconductor layer and a second transparent electrode layer on the first transparent electrode layer, wherein the second electrode includes a first metal layer on the first transparent electrode layer and a second metal layer on the first metal layer, wherein a portion of the second transparent electrode layer is disposed between the first metal layer and the second metal layer, wherein the portion of the second transparent electrode layer is disposed on a top surface of the first metal layer, wherein the second transparent electrode layer covers the side surface and a first portion of the top surface of the first metal layer, wherein a second portion of the top surface of the first metal layer is exposed by the second transparent electrode layer, wherein the second metal layer comprises a first region on a top surface of the second transparent electrode layer and a second region surrounded by the second transparent electrode layer, wherein a lateral width of the second region of the second metal layer is less than that of the first region of the second metal layer, and wherein the second transparent electrode layer is directly in-contact with both the second region of the second metal layer and the first portion of the top surface of the first metal layer. a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a transparent electrode layer on the second conductive semiconductor layer; and a second electrode on the transparent electrode layer, wherein the second electrode is anchored to the transparent electrode layer, wherein the transparent electrode layer includes a first transparent electrode layer on the second conductive semiconductor layer and a second transparent electrode layer on the first transparent electrode layer, wherein the second electrode includes a first metal layer on the first transparent electrode layer and a second metal layer on the first metal layer, wherein a portion of the second transparent electrode layer is disposed between the first metal layer and the second metal layer, wherein the portion of the second transparent electrode layer is disposed on a top surface of the first metal layer, wherein the second transparent electrode layer covers the side surface and a first portion of the top surface of the first metal layer, wherein a second portion of the top surface of the first metal layer is exposed by the second transparent electrode layer, wherein the second metal layer comprises a first region on a top surface of the second transparent electrode layer and a second region surrounded by the second transparent electrode layer, wherein a lateral width of the second region of the second metal layer is less than that of the first region of the second metal layer, and wherein the second transparent electrode layer is directly in-contact with both the second region of the second metal layer and the first portion of the top surface of the first metal layer.