Stack-shaped III-V semiconductor diode, comprising - an n + layer with a first side, a second side opposite the first side, a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness of 50 - 675 microns, wherein the n + layer comprises a GaAs compound or consists of a GaAs compound, - an n - layer with a first side, a second side opposite the first side, a doping substance concentration of 10 12 - 10 18 N/cm 8, a layer thickness of 10 - 300 microns, which layer comprises a GaAs compound or consists of a GaAs compound, - a p + layer with a first side, a second side opposite the first side, a doping substance concentration of 5•10 18 - 5•10 20 N/cm 3, with a layer thickness greater than 2 microns, which layer comprises a GaAs compound or consists of a GaAs compound, wherein - the layers follow one another in the stated sequence and are of monolithic construction, - the n + layer or the p + layer is constructed as substrate and - the second side of the n- layer is connected by material couple with the first side of the n + layer, - arranged between the n - layer and the p + layer is a doped intermediate layer with a layer thickness of 1 - 50 microns and a doping substance concentration of 10 12 - 10 17 N/cm 3 and with a first side and a second side opposite the first side, the second side of the intermediate layer being connected with the first side of the n - layer by material couple and the first side of the intermediate layer being connected with the second side of the p + layer by material couple, wherein the intermediate layer is connected with the n - layer and with the p + layer by material couple and is p-doped, wherein the stack-shaped III-V semiconductor diode has a first defect layer with a layer thickness between 0.5 microns and 40 microns, - wherein the defect layer is arranged within the p-doped intermediate layer and - the defect layer has a defect concentration in a range between 1•10 13 N/cm 3 and 5•10 16 N/cm 3. - an n + layer with a first side, a second side opposite the first side, a doping substance concentration of at least 10 19 N/cm 3 and a layer thickness of 50 - 675 microns, wherein the n + layer comprises a GaAs compound or consists of a GaAs compound, - an n - layer with a first side, a second side opposite the first side, a doping substance concentration of 10 12 - 10 18 N/cm 8, a layer thickness of 10 - 300 microns, which layer comprises a GaAs compound or consists of a GaAs compound, - a p + layer with a first side, a second side opposite the first side, a doping substance concentration of 5•10 18 - 5•10 20 N/cm 3, with a layer thickness greater than 2 microns, which layer comprises a GaAs compound or consists of a GaAs compound, wherein - the layers follow one another in the stated sequence and are of monolithic construction, - the n + layer or the p + layer is constructed as substrate and - the second side of the n- layer is connected by material couple with the first side of the n + layer, - arranged between the n - layer and the p + layer is a doped intermediate layer with a layer thickness of 1 - 50 microns and a doping substance concentration of 10 12 - 10 17 N/cm 3 and with a first side and a second side opposite the first side, the second side of the intermediate layer being connected with the first side of the n - layer by material couple and the first side of the intermediate layer being connected with the second side of the p + layer by material couple, - wherein the defect layer is arranged within the p-doped intermediate layer and - the defect layer has a defect concentration in a range between 1•10 13 N/cm 3 and 5•10 16 N/cm 3.