A semiconductor device, comprising: a substrate; a first magnetic tunnel junction, MTJ, structure disposed on the substrate; a second MTJ structure disposed on the substrate; and an interconnection structure disposed on the substrate, wherein the interconnection structure comprises: a first metal interconnection and a second metal interconnection disposed on and contacting the first metal interconnection, the first metal interconnection and the second metal interconnection being located between the first MTJ structure and the second MTJ structure in a first horizontal direction; a third metal interconnection disposed on and contacting the first MTJ structure; and a fourth metal interconnection disposed on and contacting the second MTJ structure; characterized in that the second metal interconnection is elongated in the first horizontal direction, and the third metal interconnection and the fourth metal interconnection are elongated in a second horizontal direction, respectively; wherein the first horizontal direction is orthogonal to the second horizontal direction, and the first horizontal direction and the second horizontal direction are orthogonal to a thickness direction of the substrate; and wherein in a top view of the semiconductor device, a width of each of two end portions of the second metal interconnection in the first horizontal direction is greater than a width of a middle portion of the second metal interconnection located between the two end portions of the second metal interconnection. a substrate; a first magnetic tunnel junction, MTJ, structure disposed on the substrate; a second MTJ structure disposed on the substrate; and an interconnection structure disposed on the substrate, wherein the interconnection structure comprises: a first metal interconnection and a second metal interconnection disposed on and contacting the first metal interconnection, the first metal interconnection and the second metal interconnection being located between the first MTJ structure and the second MTJ structure in a first horizontal direction; a third metal interconnection disposed on and contacting the first MTJ structure; and a fourth metal interconnection disposed on and contacting the second MTJ structure; characterized in that the second metal interconnection is elongated in the first horizontal direction, and the third metal interconnection and the fourth metal interconnection are elongated in a second horizontal direction, respectively; wherein the first horizontal direction is orthogonal to the second horizontal direction, and the first horizontal direction and the second horizontal direction are orthogonal to a thickness direction of the substrate; and wherein in a top view of the semiconductor device, a width of each of two end portions of the second metal interconnection in the first horizontal direction is greater than a width of a middle portion of the second metal interconnection located between the two end portions of the second metal interconnection. a first metal interconnection and a second metal interconnection disposed on and contacting the first metal interconnection, the first metal interconnection and the second metal interconnection being located between the first MTJ structure and the second MTJ structure in a first horizontal direction; a third metal interconnection disposed on and contacting the first MTJ structure; and a fourth metal interconnection disposed on and contacting the second MTJ structure; characterized in that the second metal interconnection is elongated in the first horizontal direction, and the third metal interconnection and the fourth metal interconnection are elongated in a second horizontal direction, respectively; wherein the first horizontal direction is orthogonal to the second horizontal direction, and the first horizontal direction and the second horizontal direction are orthogonal to a thickness direction of the substrate; and wherein in a top view of the semiconductor device, a width of each of two end portions of the second metal interconnection in the first horizontal direction is greater than a width of a middle portion of the second metal interconnection located between the two end portions of the second metal interconnection.