Production method for a micromechanical component comprising the following steps: - providing a conductive substrate (1; 1', 17, 19); and - providing an island-like region of a sacrificial layer above or in a front side of the substrate (1; 1', 17, 19); wherein provision is made for the sacrificial layer to consist of Ge or SiGe, preferably of Si 1-x Ge x where x = 0.1-0.8, particularly preferably where x = 0.2-0.5; and - providing at least one conductive layer (9; 9a) above the sacrificial layer, wherein the conductive layer (9; 9a) is electrically insulated from the substrate (1; 1', 17, 19); and - providing a dielectric layer (1a; 1'a) in the form of a silicon oxide layer on the front side of the substrate (1; 1', 17, 19) between the substrate (1; 1', 17, 19) and the sacrificial layer; and - providing a plurality of perforation openings and perforation holes (15"') which run through the substrate (1; 1', 17, 19) and which extend at least as far as the island-like region of the sacrificial layer; wherein the perforation holes are formed by a trench etching process as far as the dielectric layer (1a; 1'a) and the perforation openings are formed by a subsequent opening of the third electrical layer in the perforation holes (15"'), wherein the third dielectric layer (1a; 1'a, 17') constitutes an etch stop for the trench etching process, and wherein provision is made for the dielectric layer (1a; 1'a) to constitute a diffusion barrier for Ge; and - removing the sacrificial layer by a first etching process from a rear side of the substrate (1; 1', 17, 19) through the perforation openings and perforation holes (15"') in order to create a hollow space (H; H') which exposes an elastically deflectable membrane (M; M') comprising at least the conductive layer (9; 9a) which is provided above a front side of the substrate (1; 1', 17, 19). - providing a conductive substrate (1; 1', 17, 19); and - providing an island-like region of a sacrificial layer above or in a front side of the substrate (1; 1', 17, 19); wherein provision is made for the sacrificial layer to consist of Ge or SiGe, preferably of Si 1-x Ge x where x = 0.1-0.8, particularly preferably where x = 0.2-0.5; and - providing at least one conductive layer (9; 9a) above the sacrificial layer, wherein the conductive layer (9; 9a) is electrically insulated from the substrate (1; 1', 17, 19); and - providing a dielectric layer (1a; 1'a) in the form of a silicon oxide layer on the front side of the substrate (1; 1', 17, 19) between the substrate (1; 1', 17, 19) and the sacrificial layer; and - providing a plurality of perforation openings and perforation holes (15"') which run through the substrate (1; 1', 17, 19) and which extend at least as far as the island-like region of the sacrificial layer; wherein the perforation holes are formed by a trench etching process as far as the dielectric layer (1a; 1'a) and the perforation openings are formed by a subsequent opening of the third electrical layer in the perforation holes (15"'), wherein the third dielectric layer (1a; 1'a, 17') constitutes an etch stop for the trench etching process, and wherein provision is made for the dielectric layer (1a; 1'a) to constitute a diffusion barrier for Ge; and - removing the sacrificial layer by a first etching process from a rear side of the substrate (1; 1', 17, 19) through the perforation openings and perforation holes (15"') in order to create a hollow space (H; H') which exposes an elastically deflectable membrane (M; M') comprising at least the conductive layer (9; 9a) which is provided above a front side of the substrate (1; 1', 17, 19).