A display system, comprising: a pixel circuit (300; 330) comprising a light emitting device (302; 332) adapted to emit light according to programming data, the pixel circuit (300; 330) further including: a drive transistor connected in series to the light emitting device (302; 332), the drive transistor including a gate terminal, a first terminal and a second terminal; a first switch transistor adapted to selectively connect a data line to the gate terminal of the drive transistor, the first switch transistor including a gate terminal, a first terminal and a second terminal, the programming data being provided on the data line during a programming cycle while the first switch transistor is turned on; a storage capacitor adapted to control a voltage difference between the gate terminal and the first terminal of the drive transistor; and a circuit adapted to adjust a gate voltage of the drive transistor, the circuit comprising a sensor adapted to detect energy transfer from the pixel circuit (300; 330) and a discharging transistor adapted to selectively couple the sensor to the gate terminal of the drive transistor, wherein the sensor has a conductance that varies upon a sensing result, and the gate terminal of the drive transistor is discharged through the sensor in dependence upon the conductance of the sensor; wherein the sensor is a thermal or optical sensor having a carrier density that changes based on the absorption of thermal or optical energy from the pixel circuit (300; 330), respectively, such that the resistance of the sensor varies according to the absorbed energy. a pixel circuit (300; 330) comprising a light emitting device (302; 332) adapted to emit light according to programming data, the pixel circuit (300; 330) further including: a drive transistor connected in series to the light emitting device (302; 332), the drive transistor including a gate terminal, a first terminal and a second terminal; a first switch transistor adapted to selectively connect a data line to the gate terminal of the drive transistor, the first switch transistor including a gate terminal, a first terminal and a second terminal, the programming data being provided on the data line during a programming cycle while the first switch transistor is turned on; a storage capacitor adapted to control a voltage difference between the gate terminal and the first terminal of the drive transistor; and a circuit adapted to adjust a gate voltage of the drive transistor, the circuit comprising a sensor adapted to detect energy transfer from the pixel circuit (300; 330) and a discharging transistor adapted to selectively couple the sensor to the gate terminal of the drive transistor, wherein the sensor has a conductance that varies upon a sensing result, and the gate terminal of the drive transistor is discharged through the sensor in dependence upon the conductance of the sensor; wherein the sensor is a thermal or optical sensor having a carrier density that changes based on the absorption of thermal or optical energy from the pixel circuit (300; 330), respectively, such that the resistance of the sensor varies according to the absorbed energy. a drive transistor connected in series to the light emitting device (302; 332), the drive transistor including a gate terminal, a first terminal and a second terminal; a first switch transistor adapted to selectively connect a data line to the gate terminal of the drive transistor, the first switch transistor including a gate terminal, a first terminal and a second terminal, the programming data being provided on the data line during a programming cycle while the first switch transistor is turned on; a storage capacitor adapted to control a voltage difference between the gate terminal and the first terminal of the drive transistor; and a circuit adapted to adjust a gate voltage of the drive transistor, the circuit comprising a sensor adapted to detect energy transfer from the pixel circuit (300; 330) and a discharging transistor adapted to selectively couple the sensor to the gate terminal of the drive transistor, wherein the sensor has a conductance that varies upon a sensing result, and the gate terminal of the drive transistor is discharged through the sensor in dependence upon the conductance of the sensor; wherein the sensor is a thermal or optical sensor having a carrier density that changes based on the absorption of thermal or optical energy from the pixel circuit (300; 330), respectively, such that the resistance of the sensor varies according to the absorbed energy.