A bidirectional switch, comprising: a first III-N based high electron mobility transistor having a first gate and a first source terminal; and a second III-N based high electron mobility transistor having a second gate and a second source terminal, wherein the first III-N based high electron mobility transistor shares a drift region with the second III-N based high electron mobility transistor and the bidirectional switch is free of a drain contact in between the first III-N based high electron mobility transistor and the second III-N based high electron mobility transistor, wherein a length of the drift region (L dr) is equal to or greater than a first voltage divided by an effective critical field in material of the drift region, the first voltage being equal to a sum of a first voltage difference and a second voltage difference, wherein the first voltage difference is a maximum voltage difference between the first source terminal and the second source terminal during operation of the bidirectional switch, and the second voltage difference is a difference between high and low voltage signals applied to the first gate with respect to the first source terminal and to the second gate with respect to the second source terminal, characterized in that the bidirectional switch further comprises a first field plate on the first gate of the first III-N based high electron mobility transistor and a second field plate on the second gate of the second III-N based high electron mobility transistor, wherein the first field plate extends only towards the second gate and the second field plate extends only towards the first gate. a first III-N based high electron mobility transistor having a first gate and a first source terminal; and a second III-N based high electron mobility transistor having a second gate and a second source terminal, wherein the first III-N based high electron mobility transistor shares a drift region with the second III-N based high electron mobility transistor and the bidirectional switch is free of a drain contact in between the first III-N based high electron mobility transistor and the second III-N based high electron mobility transistor, wherein a length of the drift region (L dr) is equal to or greater than a first voltage divided by an effective critical field in material of the drift region, the first voltage being equal to a sum of a first voltage difference and a second voltage difference, wherein the first voltage difference is a maximum voltage difference between the first source terminal and the second source terminal during operation of the bidirectional switch, and the second voltage difference is a difference between high and low voltage signals applied to the first gate with respect to the first source terminal and to the second gate with respect to the second source terminal, characterized in that the bidirectional switch further comprises a first field plate on the first gate of the first III-N based high electron mobility transistor and a second field plate on the second gate of the second III-N based high electron mobility transistor, wherein the first field plate extends only towards the second gate and the second field plate extends only towards the first gate.