A semiconductor device comprising: a substrate; a gate electrode, a source electrode, and a drain electrode provided on a first surface of the substrate, and have a plurality of fingers, respectively; a gate terminal electrode (G1, G2, G3, G4), a source terminal electrode (S1, S2, S3, S4, S5), and a drain terminal electrode provided on the first surface of the substrate, and ties a plurality of fingers, respectively for every gate electrode, source electrode, and drain electrode; a plurality of active areas (AA 1, AA 2, AA 3, AA 4, AA 5) provided on the substrate under the gate electrode, the source electrode, and the drain electrode; a plurality of non-active areas provided on the substrate in areas where the active areas (AA 1, AA 2, AA 3, AA 4, AA 5) are not provided; and a via hole connected to the source terminal electrode (S1, S2, S3, S4, S5), wherein, the plurality of active areas (AA 1, AA 2, AA 3, AA 4, AA 5) comprises stripes extending in a first direction and the plurality of non-active areas and the plurality of stripes of the active area (AA 1, AA 2, AA 3, AA 4, AA 5) are alternately provided in the first direction, wherein, the gate electrodes comprise a fishbone placement, said fishbone placement comprising a wide supply line extending in a second direction perpendicular to said first direction and a plurality of first bus lines extending along said first direction connected to said wide supply line, the gate electrode further comprising said plurality of fingers, each of said fingers being connected to said first bus lines, wherein the wide supply line is wider than the first bus lines, and wherein the wide supply line is connected to the gate terminal electrode (G1, G2, G3, G4) and wherein said first bus lines are provided on respective stripe-shaped non-active areas provided between the active areas (AA 1, AA 2, AA 3, AA 4, AA 5) extending in the first direction, wherein the parts of the source electrode and the drain electrode over the non-active area have an air bridge structure, wherein the respective fingers of the gate electrodes extend in a single direction from the respective first bus lines. a substrate; a gate electrode, a source electrode, and a drain electrode provided on a first surface of the substrate, and have a plurality of fingers, respectively; a gate terminal electrode (G1, G2, G3, G4), a source terminal electrode (S1, S2, S3, S4, S5), and a drain terminal electrode provided on the first surface of the substrate, and ties a plurality of fingers, respectively for every gate electrode, source electrode, and drain electrode; a plurality of active areas (AA 1, AA 2, AA 3, AA 4, AA 5) provided on the substrate under the gate electrode, the source electrode, and the drain electrode; a plurality of non-active areas provided on the substrate in areas where the active areas (AA 1, AA 2, AA 3, AA 4, AA 5) are not provided; and a via hole connected to the source terminal electrode (S1, S2, S3, S4, S5), wherein, the plurality of active areas (AA 1, AA 2, AA 3, AA 4, AA 5) comprises stripes extending in a first direction and the plurality of non-active areas and the plurality of stripes of the active area (AA 1, AA 2, AA 3, AA 4, AA 5) are alternately provided in the first direction, wherein, the gate electrodes comprise a fishbone placement, said fishbone placement comprising a wide supply line extending in a second direction perpendicular to said first direction and a plurality of first bus lines extending along said first direction connected to said wide supply line, the gate electrode further comprising said plurality of fingers, each of said fingers being connected to said first bus lines, wherein the wide supply line is wider than the first bus lines, and wherein the wide supply line is connected to the gate terminal electrode (G1, G2, G3, G4) and wherein said first bus lines are provided on respective stripe-shaped non-active areas provided between the active areas (AA 1, AA 2, AA 3, AA 4, AA 5) extending in the first direction, wherein the parts of the source electrode and the drain electrode over the non-active area have an air bridge structure, wherein the respective fingers of the gate electrodes extend in a single direction from the respective first bus lines.