A semiconductor substrate comprising: an Si substrate; a first SiGe layer on the Si substrate; and a second SiGe layer on the first SiGe layer either directly or with an Si layer arranged between the second SiGe layer and the first SiGe layer; wherein the first SiGe layer has a Ge composition ratio to accumulate strain energy, the first SiGe layer has a predetermined thickness that is thinner than the film thickness at which remarkable generation of dislocation and lattice relaxation actually begin, the predetermined thickness of the first SiGe layer is 400 nm or less, a Ge composition ratio of the second SiGe layer at an interface contact surface with the first SiGe layer or with the Si layer is at least lower than an intralayer maximum value of the Ge composition ratio in the first SiGe layer, the second SiGe layer has an incremental composition region in which the Ge composition ratio gradually increases in a direction moving away from the first SiGe layer of the semiconductor substrate at least in a portion thereof, the second SiGe layer is composed in the form of a multilayer laminated layer, characterized in that the multilayer laminated layer consists of a plurality of alternating sub-layers of an SiGe incremental composition layer, in which the Ge composition ratio is gradually increased in a direction moving away from the first SiGe layer of the semiconductor substrate, and an SiGe constant composition layer, which is arranged on the SiGe incremental composition layer at the Ge composition ratio of an upper interface surface of the SiGe incremental composition layer, and the Ge composition ratio is in the form of incremental steps throughout the second SiGe layer, and the SiGe incremental composition layer is the incremental composition region, and the Ge composition ratio of the first SiGe layer is 0.2. an Si substrate; a first SiGe layer on the Si substrate; and a second SiGe layer on the first SiGe layer either directly or with an Si layer arranged between the second SiGe layer and the first SiGe layer; wherein the first SiGe layer has a Ge composition ratio to accumulate strain energy, the first SiGe layer has a predetermined thickness that is thinner than the film thickness at which remarkable generation of dislocation and lattice relaxation actually begin, the predetermined thickness of the first SiGe layer is 400 nm or less, a Ge composition ratio of the second SiGe layer at an interface contact surface with the first SiGe layer or with the Si layer is at least lower than an intralayer maximum value of the Ge composition ratio in the first SiGe layer, the second SiGe layer has an incremental composition region in which the Ge composition ratio gradually increases in a direction moving away from the first SiGe layer of the semiconductor substrate at least in a portion thereof, the second SiGe layer is composed in the form of a multilayer laminated layer, characterized in that the multilayer laminated layer consists of a plurality of alternating sub-layers of an SiGe incremental composition layer, in which the Ge composition ratio is gradually increased in a direction moving away from the first SiGe layer of the semiconductor substrate, and an SiGe constant composition layer, which is arranged on the SiGe incremental composition layer at the Ge composition ratio of an upper interface surface of the SiGe incremental composition layer, and the Ge composition ratio is in the form of incremental steps throughout the second SiGe layer, and the SiGe incremental composition layer is the incremental composition region, and the Ge composition ratio of the first SiGe layer is 0.2.