A method for controlling a commutation process of a load current from a first switching module to a second switching module, wherein both the first and second switching modules (SM1, SM2) each comprise a MOSFET (Q1, Q2) which is controllable by a gate-source voltage (U GS), and an intrinsic inverse diode (D1, D2), the method comprising the consecutive steps of: applying a first control voltage to the first switching module to switch it off for a first time period (t 1), wherein the level (U 1, U 1 ') of the first control voltage is below a predetermined threshold voltage (U TH), above which the MOSFET of the first switching module becomes minimally conductive, and wherein the first time period (t 1) is selected so that the inverse diode of the first switching module takes over the load current; applying, upon expiry of the first time period (t 1), a second control voltage to the first switching module for a second time period (t 2) to influence the switch-off behavior of the inverse diode of the first switching module, wherein the second control voltage has an intermediate level (U 2, U 2 ') which is between the level (U 1, U 1 ') of the first control voltage and that of the threshold voltage (U TH), applying, within the second time period (t 2), a third control voltage to the second switching module to switch it on, wherein the level (U 3, U 3 ') of the third control voltage is above a predetermined threshold voltage (U TH), above which the MOSFET of the second switching module becomes minimally conductive, in order to cause a commutation of the load current from the inverse diode of the first switching module to the MOSFET of the second switching module; and applying, upon expiry of the second time period (t 2), a fourth control voltage having a level (U 4, U 4 ') that is below the intermediate level (U 2, U 2 ') of the second control voltage to the MOSFET of the first switching module to block it or hold it in a blocked state. applying a first control voltage to the first switching module to switch it off for a first time period (t 1), wherein the level (U 1, U 1 ') of the first control voltage is below a predetermined threshold voltage (U TH), above which the MOSFET of the first switching module becomes minimally conductive, and wherein the first time period (t 1) is selected so that the inverse diode of the first switching module takes over the load current; applying, upon expiry of the first time period (t 1), a second control voltage to the first switching module for a second time period (t 2) to influence the switch-off behavior of the inverse diode of the first switching module, wherein the second control voltage has an intermediate level (U 2, U 2 ') which is between the level (U 1, U 1 ') of the first control voltage and that of the threshold voltage (U TH), applying, within the second time period (t 2), a third control voltage to the second switching module to switch it on, wherein the level (U 3, U 3 ') of the third control voltage is above a predetermined threshold voltage (U TH), above which the MOSFET of the second switching module becomes minimally conductive, in order to cause a commutation of the load current from the inverse diode of the first switching module to the MOSFET of the second switching module; and applying, upon expiry of the second time period (t 2), a fourth control voltage having a level (U 4, U 4 ') that is below the intermediate level (U 2, U 2 ') of the second control voltage to the MOSFET of the first switching module to block it or hold it in a blocked state.