Electron beam writing equipment comprising: means for generating multi electron beams in parallel (601, 603, 604); means for on/off controlling each of said multi electron beams according to pattern data to be written; and means for deflection scanning (611, 613) said on/off controlled electron beams together to form a desired pattern on a surface of a wafer; wherein the means for deflection scanning (611, 613) is such that the multi electron beams are each arranged to be deflection scanned successively over a respective maximum writing area (401, 803) at the surface of the wafer, the respective maximum writing area (401, 803) being a maximum writing area in which the respective electron beam can be deflection scanned successively; wherein a width of the maximum writing area (401, 803) is larger than an interval between centers of said multi electron beams in a width direction of the maximum writing area (401, 803); characterized in that: the electron beam writing equipment is configured to perform overwriting by shifting positions of the centers of the maximum writing areas (401, 803) of the multi electron beams; and the positions of the centers of said maximum writing areas (401, 803) are shifted by substantially an integer multiple of the interval between centers of said electron beams in the width direction; or the positions of the centers of said maximum writing areas (401, 803) are shifted by substantially an integer multiple and 1/integer of the interval between centers of said electron beams in the width direction. means for generating multi electron beams in parallel (601, 603, 604); means for on/off controlling each of said multi electron beams according to pattern data to be written; and means for deflection scanning (611, 613) said on/off controlled electron beams together to form a desired pattern on a surface of a wafer; wherein the means for deflection scanning (611, 613) is such that the multi electron beams are each arranged to be deflection scanned successively over a respective maximum writing area (401, 803) at the surface of the wafer, the respective maximum writing area (401, 803) being a maximum writing area in which the respective electron beam can be deflection scanned successively; wherein a width of the maximum writing area (401, 803) is larger than an interval between centers of said multi electron beams in a width direction of the maximum writing area (401, 803); characterized in that: the electron beam writing equipment is configured to perform overwriting by shifting positions of the centers of the maximum writing areas (401, 803) of the multi electron beams; and the positions of the centers of said maximum writing areas (401, 803) are shifted by substantially an integer multiple of the interval between centers of said electron beams in the width direction; or the electron beam writing equipment is configured to perform overwriting by shifting positions of the centers of the maximum writing areas (401, 803) of the multi electron beams; and the positions of the centers of said maximum writing areas (401, 803) are shifted by substantially an integer multiple of the interval between centers of said electron beams in the width direction; or the positions of the centers of said maximum writing areas (401, 803) are shifted by substantially an integer multiple and 1/integer of the interval between centers of said electron beams in the width direction.