Method for transferring a layer comprising the following steps: - providing a first substrate having a front face and a rear face and comprising a support forming the rear face and a stack on the support, said stack comprising a first layer made of a first semiconductive material, forming the front face and a second layer made of a second dielectric material, - providing a second substate having a free face and comprising a layer made of a polymer material forming the free face, - gluing the first and second substrates (1, 2) to an interface between the front face of the first substrate and the free face of the second substrate, - removing the support then the second layer of the first substrate, so as to expose the first layer glued on the layer made of a polymer material, and wherein the first substrate is formed with at least one additional stack comprising a third layer made of a third material and a fourth layer made of a fourth material, said at least one additional stack being interleaved between the support and the stack of the first substate, such that the fourth layer is on the side of the support and that the third layer is on the side of the second layer of the stack, the method being characterised in that: - it further comprises at least one additional step configured to remove the fourth layer then the third layer, then the second layer; - the fourth layer is removed by an etching having a selectivity regarding the third material greater than 5, then - the third layer is removed by an etching having a selectivity regarding the second material greater than 5, then - the second layer is removed by an etching having a selectivity regarding the first material greater than 5. - providing a first substrate having a front face and a rear face and comprising a support forming the rear face and a stack on the support, said stack comprising a first layer made of a first semiconductive material, forming the front face and a second layer made of a second dielectric material, - providing a second substate having a free face and comprising a layer made of a polymer material forming the free face, - gluing the first and second substrates (1, 2) to an interface between the front face of the first substrate and the free face of the second substrate, - removing the support then the second layer of the first substrate, so as to expose the first layer glued on the layer made of a polymer material, and wherein the first substrate is formed with at least one additional stack comprising a third layer made of a third material and a fourth layer made of a fourth material, said at least one additional stack being interleaved between the support and the stack of the first substate, such that the fourth layer is on the side of the support and that the third layer is on the side of the second layer of the stack, - it further comprises at least one additional step configured to remove the fourth layer then the third layer, then the second layer; - the fourth layer is removed by an etching having a selectivity regarding the third material greater than 5, then - the third layer is removed by an etching having a selectivity regarding the second material greater than 5, then - the second layer is removed by an etching having a selectivity regarding the first material greater than 5.