A power semiconductor device, comprising: a semiconductor substrate, wherein the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, wherein the epitaxial layer is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, wherein the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, wherein the second metal layer is located in an annular region between an edge of the first metal layer and the scribing region; and a passivation layer, wherein the passivation layer is of an annular structure and covers the second metal layer and a part of the first metal layer, wherein the second metal layer comprises a plurality of groups of metal structures, the plurality of groups of metal structures are distributed in the annular region, and the plurality of groups of metal structures are disposed in pairs at spacings, wherein each group of metal structures comprises at least two metal blocks, and the at least two metal blocks are arranged one after another in a direction from an edge to a center of the power semiconductor device, wherein a cross section that is of each of the at least two metal blocks and that is perpendicular to the thickness direction of the power semiconductor device is step-shaped, wherein each of the at least two metal blocks comprises a plurality of step planes, each couple of adjacent step planes is connected by a respective connection surface, and the step planes and the connection surfaces are respectively disposed along two adjacent edges of the first surface of the epitaxial layer; or each of the at least two metal blocks consists of a first part and a second part, and the first part and the second part are connected and define an angle therebetween. a semiconductor substrate, wherein the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, wherein the epitaxial layer is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, wherein the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, wherein the second metal layer is located in an annular region between an edge of the first metal layer and the scribing region; and a passivation layer, wherein the passivation layer is of an annular structure and covers the second metal layer and a part of the first metal layer, wherein the second metal layer comprises a plurality of groups of metal structures, the plurality of groups of metal structures are distributed in the annular region, and the plurality of groups of metal structures are disposed in pairs at spacings, wherein each group of metal structures comprises at least two metal blocks, and the at least two metal blocks are arranged one after another in a direction from an edge to a center of the power semiconductor device, wherein a cross section that is of each of the at least two metal blocks and that is perpendicular to the thickness direction of the power semiconductor device is step-shaped, wherein each of the at least two metal blocks comprises a plurality of step planes, each couple of adjacent step planes is connected by a respective connection surface, and the step planes and the connection surfaces are respectively disposed along two adjacent edges of the first surface of the epitaxial layer; or each of the at least two metal blocks consists of a first part and a second part, and the first part and the second part are connected and define an angle therebetween.