A method for forming a device comprising: providing a substrate (201, 401) prepared with a transistor region (204, 404) and a sensor region (206, 406); processing the substrate (201, 401) which includes forming a lower sensor cavity (260, 460) in the substrate (201, 401), the lower sensor cavity (260, 460) having a bottom surface disposed below a top surface of the substrate (201, 401), filling the lower sensor cavity (260, 460) with a sacrificial material, forming a dielectric membrane in the sensor region (206, 406), the dielectric membrane covers the sacrificial material in the lower sensor cavity (260, 460), forming a transistor in the transistor region (204, 404), and forming a micro-electrical mechanical system, MEMS, component on the dielectric membrane in the sensor region (206, 406); and forming a back-end-of-line, BEOL, dielectric (270, 470) disposed on the substrate (201, 401) having a plurality of interlayer dielectric, ILD layers with metal and via levels (276, 272, 476, 472), the metal levels (276, 476) include metal lines (277, 477) and the via levels (272, 472) include via contacts (273, 473) for interconnecting the components of the device, and wherein the metal lines (277, 477) in the metal levels (276, 476) are configured to define a stepped profile of an upper sensor cavity (264, 464) over the lower sensor cavity (260, 460), and wherein metal lines (277, 477) of a first metal level (276, 476) of the BEOL dielectric (270, 470) are configured to define a geometry of the MEMS component. providing a substrate (201, 401) prepared with a transistor region (204, 404) and a sensor region (206, 406); processing the substrate (201, 401) which includes forming a lower sensor cavity (260, 460) in the substrate (201, 401), the lower sensor cavity (260, 460) having a bottom surface disposed below a top surface of the substrate (201, 401), filling the lower sensor cavity (260, 460) with a sacrificial material, forming a dielectric membrane in the sensor region (206, 406), the dielectric membrane covers the sacrificial material in the lower sensor cavity (260, 460), forming a transistor in the transistor region (204, 404), and forming a micro-electrical mechanical system, MEMS, component on the dielectric membrane in the sensor region (206, 406); and forming a lower sensor cavity (260, 460) in the substrate (201, 401), the lower sensor cavity (260, 460) having a bottom surface disposed below a top surface of the substrate (201, 401), filling the lower sensor cavity (260, 460) with a sacrificial material, forming a dielectric membrane in the sensor region (206, 406), the dielectric membrane covers the sacrificial material in the lower sensor cavity (260, 460), forming a transistor in the transistor region (204, 404), and forming a micro-electrical mechanical system, MEMS, component on the dielectric membrane in the sensor region (206, 406); and forming a back-end-of-line, BEOL, dielectric (270, 470) disposed on the substrate (201, 401) having a plurality of interlayer dielectric, ILD layers with metal and via levels (276, 272, 476, 472), the metal levels (276, 476) include metal lines (277, 477) and the via levels (272, 472) include via contacts (273, 473) for interconnecting the components of the device, and wherein the metal lines (277, 477) in the metal levels (276, 476) are configured to define a stepped profile of an upper sensor cavity (264, 464) over the lower sensor cavity (260, 460), and wherein metal lines (277, 477) of a first metal level (276, 476) of the BEOL dielectric (270, 470) are configured to define a geometry of the MEMS component.