A method for fabricating a component comprising transferring an assembly having one or more layers of one or more single-crystal piezoelectric or pyroelectric or ferroelectric materials to a final substrate, said method comprising at least: - a first set of steps comprising: ∘ a step of implanting ions into a donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material at an implantation level so as to define a layer region in said single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a first joining step of joining said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to a temporary substrate, said first joining step comprising producing a fragile separating interface region (300, 310) between said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and said temporary substrate, said region comprising at least two layers of different materials (110, 300, 310) in order to ensure that two compounds of the layers (110, 310), capable of generating an interdiffusion of one or more constituent elements of at least one of the two compounds, come into contact; ∘ a step of thinning said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to the implantation level so as to define a layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a step of healing residual defects via thermal annealing of said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; - and a second set of steps subsequent to the first set of steps, comprising at least: ∘ a second joining step of joining an assembly comprising the one or more layers of one or more single-crystal piezoelectric or pyroelectric or ferroelectric materials and said temporary substrate to a final substrate; ∘ a step of separating the temporary substrate from said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material, at said fragile separating interface region. - a first set of steps comprising: ∘ a step of implanting ions into a donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material at an implantation level so as to define a layer region in said single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a first joining step of joining said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to a temporary substrate, said first joining step comprising producing a fragile separating interface region (300, 310) between said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and said temporary substrate, said region comprising at least two layers of different materials (110, 300, 310) in order to ensure that two compounds of the layers (110, 310), capable of generating an interdiffusion of one or more constituent elements of at least one of the two compounds, come into contact; ∘ a step of thinning said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to the implantation level so as to define a layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a step of healing residual defects via thermal annealing of said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a step of implanting ions into a donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material at an implantation level so as to define a layer region in said single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a first joining step of joining said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to a temporary substrate, said first joining step comprising producing a fragile separating interface region (300, 310) between said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and said temporary substrate, said region comprising at least two layers of different materials (110, 300, 310) in order to ensure that two compounds of the layers (110, 310), capable of generating an interdiffusion of one or more constituent elements of at least one of the two compounds, come into contact; ∘ a step of thinning said donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material to the implantation level so as to define a layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; ∘ a step of healing residual defects via thermal annealing of said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material; - and a second set of steps subsequent to the first set of steps, comprising at least: ∘ a second joining step of joining an assembly comprising the one or more layers of one or more single-crystal piezoelectric or pyroelectric or ferroelectric materials and said temporary substrate to a final substrate; ∘ a step of separating the temporary substrate from said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material, at said fragile separating interface region. ∘ a second joining step of joining an assembly comprising the one or more layers of one or more single-crystal piezoelectric or pyroelectric or ferroelectric materials and said temporary substrate to a final substrate; ∘ a step of separating the temporary substrate from said layer of single-crystal piezoelectric or pyroelectric or ferroelectric material, at said fragile separating interface region.