A method for manufacturing a thin film transistor array substrate, comprising: forming, on a substrate, a gate electrode, a common electrode, a gate insulation layer, an active layer and a source-drain metal layer; and forming, on the substrate on which the gate electrode, the common electrode, the gate insulation layer, the active layer and the source-drain metal layer are formed, a pixel electrode and a passivation layer; wherein the forming the pixel electrode and the passivation layer comprises: forming a transparent conductive thin film; coating photoresist onto the transparent conductive thin film; exposing and developing the photoresist with a common mask plate, so as to form a photoresist fully-reserved region and a photoresist fully-unreserved region, wherein the photoresist fully-reserved region comprises a region corresponding to the pixel electrode, a common electrode line and a source electrode and a drain electrode, and the photoresist fully-unreserved region comprises a region corresponding to a channel between the source electrode and the drain electrode and the passivation layer; etching the transparent conductive thin film at the photoresist fully-unreserved region, so as to form the pixel electrode, the common electrode line and a source electrode protective portion; etching the source-drain metal layer at the photoresist fully-unreserved region, so as to form the source and drain electrodes; wherein the pixel electrode is overlapped with and jointed to the drain electrode; wherein the source electrode protective portion covers the source electrode, and the pixel electrode covers the drain electrode; forming a passivation layer thin film; and peeling off the photoresist at the photoresist fully-reserved region, so as to form the passivation layer; wherein the common electrode line and the pixel electrode are on the same plane and made from the same layer. forming, on a substrate, a gate electrode, a common electrode, a gate insulation layer, an active layer and a source-drain metal layer; and forming, on the substrate on which the gate electrode, the common electrode, the gate insulation layer, the active layer and the source-drain metal layer are formed, a pixel electrode and a passivation layer; wherein the forming the pixel electrode and the passivation layer comprises: forming a transparent conductive thin film; coating photoresist onto the transparent conductive thin film; exposing and developing the photoresist with a common mask plate, so as to form a photoresist fully-reserved region and a photoresist fully-unreserved region, wherein the photoresist fully-reserved region comprises a region corresponding to the pixel electrode, a common electrode line and a source electrode and a drain electrode, and the photoresist fully-unreserved region comprises a region corresponding to a channel between the source electrode and the drain electrode and the passivation layer; etching the transparent conductive thin film at the photoresist fully-unreserved region, so as to form the pixel electrode, the common electrode line and a source electrode protective portion; etching the source-drain metal layer at the photoresist fully-unreserved region, so as to form the source and drain electrodes; wherein the pixel electrode is overlapped with and jointed to the drain electrode; wherein the source electrode protective portion covers the source electrode, and the pixel electrode covers the drain electrode; forming a passivation layer thin film; and peeling off the photoresist at the photoresist fully-reserved region, so as to form the passivation layer; forming a transparent conductive thin film; coating photoresist onto the transparent conductive thin film; exposing and developing the photoresist with a common mask plate, so as to form a photoresist fully-reserved region and a photoresist fully-unreserved region, wherein the photoresist fully-reserved region comprises a region corresponding to the pixel electrode, a common electrode line and a source electrode and a drain electrode, and the photoresist fully-unreserved region comprises a region corresponding to a channel between the source electrode and the drain electrode and the passivation layer; etching the transparent conductive thin film at the photoresist fully-unreserved region, so as to form the pixel electrode, the common electrode line and a source electrode protective portion; etching the source-drain metal layer at the photoresist fully-unreserved region, so as to form the source and drain electrodes; wherein the pixel electrode is overlapped with and jointed to the drain electrode; wherein the source electrode protective portion covers the source electrode, and the pixel electrode covers the drain electrode; forming a passivation layer thin film; and peeling off the photoresist at the photoresist fully-reserved region, so as to form the passivation layer; wherein the common electrode line and the pixel electrode are on the same plane and made from the same layer.