A light emitting device comprising: a flip-chip light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; a photoluminescent structure comprising an upper surface, a lower surface opposite to the upper surface of the photoluminescent structure, and an edge surface extending between the upper surface and the lower surface of the photoluminescent structure, wherein the lower surface of the photoluminescent structure covers at least the upper surface of the LED semiconductor die, and the photoluminescent structure comprises a photoluminescent layer and a supernatant light-transmitting layer disposed on the LED semiconductor die; and a reflective structure at least partially and directly covering the edge surface of the LED semiconductor die and the edge surface of the photoluminescent structure; wherein a first horizontal direction and a second horizontal direction perpendicular to the first horizontal direction are specified along a length and a width of the light emitting device, respectively; and the edge surface of the photoluminescent structure comprises two pairs of side edges, wherein one pair of the side edges of the photoluminescent structure perpendicular to the second horizontal direction is covered by the reflective structure, and another pair of the side edges of the photoluminescent structure perpendicular to the first horizontal direction is not covered by the reflective structure. a flip-chip light emitting diode semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface of the LED semiconductor die extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; a photoluminescent structure comprising an upper surface, a lower surface opposite to the upper surface of the photoluminescent structure, and an edge surface extending between the upper surface and the lower surface of the photoluminescent structure, wherein the lower surface of the photoluminescent structure covers at least the upper surface of the LED semiconductor die, and the photoluminescent structure comprises a photoluminescent layer and a supernatant light-transmitting layer disposed on the LED semiconductor die; and a reflective structure at least partially and directly covering the edge surface of the LED semiconductor die and the edge surface of the photoluminescent structure; wherein a first horizontal direction and a second horizontal direction perpendicular to the first horizontal direction are specified along a length and a width of the light emitting device, respectively; and the edge surface of the photoluminescent structure comprises two pairs of side edges, wherein one pair of the side edges of the photoluminescent structure perpendicular to the second horizontal direction is covered by the reflective structure, and another pair of the side edges of the photoluminescent structure perpendicular to the first horizontal direction is not covered by the reflective structure.