mhurhangee/ep-ind-claims huggingface dataset:
A data migration method for an information processing system comprising a storage subsystem including array groups and a management server, the method comprising the steps of: supplying, by the storage subsystem, logical volumes belonging to the array groups; setting, by the management server, a volume search criteria; setting, by the management server, relationship of a first logical volume and a second logical volume which stores duplicated data of the first logical volume in a copy control table; designating the first logical volume, in which is stored data to become a migration object; for the designated logical volume, the management server (a) specifying a first array group to which the second logical volume belongs on the basis of the copy control table and a logical volume control table in which is set the array groups to which each logical volume belongs, and (b) specifying, on the basis of the logical volume control table, a third logical volume becoming a migration target of the first logical volume from among array groups excluding the first array group; and the storage subsystem migrating, to the third logical volume, data stored in the first logical volume. supplying, by the storage subsystem, logical volumes belonging to the array groups; setting, by the management server, a volume search criteria; setting, by the management server, relationship of a first logical volume and a second logical volume which stores duplicated data of the first logical volume in a copy control table; designating the first logical volume, in which is stored data to become a migration object; for the designated logical volume, the management server (a) specifying a first array group to which the second logical volume belongs on the basis of the copy control table and a logical volume control table in which is set the array groups to which each logical volume belongs, and (b) specifying, on the basis of the logical volume control table, a third logical volume becoming a migration target of the first logical volume from among array groups excluding the first array group; and (a) specifying a first array group to which the second logical volume belongs on the basis of the copy control table and a logical volume control table in which is set the array groups to which each logical volume belongs, and (b) specifying, on the basis of the logical volume control table, a third logical volume becoming a migration target of the first logical volume from among array groups excluding the first array group; and the storage subsystem migrating, to the third logical volume, data stored in the first logical volume.
Cermet powder comprising (a) 50 to 90 wt% of one or more hard materials and (b) 10 to 50 wt% of a matrix metal composition, wherein the weight specifications relate to the total weight of the cermet powder, characterised in that the matrix metal composition consists of the following: (i) 40 to 75 wt% iron and nickel, (ii) 18 to 35 wt% chromium, (iii) 3 to 20 wt% molybdenum, (iv) 0.5 to 4 wt% copper, optionally (v) up to 10 wt% cobalt, optionally (vi) up to 5 wt% modifier, selected from the group consisting of Al, Nb, Ti, Ta, V, Si, W and any mixtures thereof, wherein the weight specifications for the metals i) to vi) in each case relate to the total weight of the matrix metal composition and wherein the weight ratio of iron to nickel lies within the range from 3:1 to 1:3. (a) 50 to 90 wt% of one or more hard materials and (b) 10 to 50 wt% of a matrix metal composition, wherein the weight specifications relate to the total weight of the cermet powder, characterised in that the matrix metal composition consists of the following: (i) 40 to 75 wt% iron and nickel, (ii) 18 to 35 wt% chromium, (iii) 3 to 20 wt% molybdenum, (iv) 0.5 to 4 wt% copper, optionally (v) up to 10 wt% cobalt, optionally (vi) up to 5 wt% modifier, selected from the group consisting of Al, Nb, Ti, Ta, V, Si, W and any mixtures thereof, wherein the weight specifications for the metals i) to vi) in each case relate to the total weight of the matrix metal composition and wherein the weight ratio of iron to nickel lies within the range from 3:1 to 1:3. (i) 40 to 75 wt% iron and nickel, (ii) 18 to 35 wt% chromium, (iii) 3 to 20 wt% molybdenum, (iv) 0.5 to 4 wt% copper, optionally (v) up to 10 wt% cobalt, optionally (vi) up to 5 wt% modifier, selected from the group consisting of Al, Nb, Ti, Ta, V, Si, W and any mixtures thereof, wherein the weight specifications for the metals i) to vi) in each case relate to the total weight of the matrix metal composition and wherein the weight ratio of iron to nickel lies within the range from 3:1 to 1:3.
A heat sink comprising a substrate, an electrode layer formed on the substrate and a solder layer formed on the substrate, characterized in that said heat sink further comprises: a window portion formed in said electrode layer; and an adhesive layer formed in said window portion having an outer peripheral portion connected to said electrode layer thereby forming an overlapping portion with the electrode layer, wherein said adhesive layer is composed of a material of which the principal component is a metal, or an alloy containing a metal, wherein said solder layer is embedded in said window portion of said electrode layer and is connected to said electrode layer via said adhesive layer, the adhesive layer being interposed between the solder layer and the substrate, wherein said solder layer has an overlapping portion overlapping said electrode layer, said overlapping portion being connected to an upper surface of said electrode layer via said outer peripheral portion of said adhesive layer and thereby being electrically connected to said electrode layer, and wherein said solder layer has a width L at its uppermost surface and the overlapping portion of the solder layer has a width L 1 and wherein the ratio L 1 /L is not more than 10 %. a window portion formed in said electrode layer; and an adhesive layer formed in said window portion having an outer peripheral portion connected to said electrode layer thereby forming an overlapping portion with the electrode layer, wherein said adhesive layer is composed of a material of which the principal component is a metal, or an alloy containing a metal, wherein said solder layer is embedded in said window portion of said electrode layer and is connected to said electrode layer via said adhesive layer, the adhesive layer being interposed between the solder layer and the substrate, wherein said solder layer has an overlapping portion overlapping said electrode layer, said overlapping portion being connected to an upper surface of said electrode layer via said outer peripheral portion of said adhesive layer and thereby being electrically connected to said electrode layer, and wherein said solder layer has a width L at its uppermost surface and the overlapping portion of the solder layer has a width L 1 and wherein the ratio L 1 /L is not more than 10 %.
A coupling kit-of-parts for a mounting arrangement that is configured for mounting an interior substructure to a primary structure of an aircraft, the kit-of-parts comprising: - a locking member; and - a mounting member including a first member part and a second member part that are movably supported by a common support member, wherein the first and second member parts (64, 65) form a locking channel therebetween that is configured to receive the locking member, wherein the mounting member is configured such that, when the locking member is inserted into the locking channel, the first and second member parts (64, 65) are pushed radially outward by the locking member. - a locking member; and - a mounting member including a first member part and a second member part that are movably supported by a common support member, wherein the first and second member parts (64, 65) form a locking channel therebetween that is configured to receive the locking member, wherein the mounting member is configured such that, when the locking member is inserted into the locking channel, the first and second member parts (64, 65) are pushed radially outward by the locking member. wherein the first and second member parts (64, 65) form a locking channel therebetween that is configured to receive the locking member, wherein the mounting member is configured such that, when the locking member is inserted into the locking channel, the first and second member parts (64, 65) are pushed radially outward by the locking member.
A heat exchanger comprising: a first pressure plate and a first energy exchanging plate attached to the first pressure plate; a second pressure plate and a second energy exchanging plate attached to the second pressure plate, the second pressure plate attached to the first pressure plate; and a first spacer and a second spacer arranged between the first energy exchanging plate and the second energy exchanging plate, characterized in that the first energy exchanging plate, the second energy exchanging plate, the first spacer and the second spacer define at least one temperature controlled passage for product to pass through the heat exchanger, wherein at least one of the first energy exchanging plate and the second energy exchanging plate comprises a passage (60, 70, 80) through a portion of the first energy exchanging plate and / or the second energy exchanging plate and further comprising a first end plate defining an inlet and a second end plate defining an outlet, the first end plate and the second end plate attached to opposite ends of the first pressure plate and the second pressure plate. a first pressure plate and a first energy exchanging plate attached to the first pressure plate; a second pressure plate and a second energy exchanging plate attached to the second pressure plate, the second pressure plate attached to the first pressure plate; and a first spacer and a second spacer arranged between the first energy exchanging plate and the second energy exchanging plate, characterized in that the first energy exchanging plate, the second energy exchanging plate, the first spacer and the second spacer define at least one temperature controlled passage for product to pass through the heat exchanger, wherein at least one of the first energy exchanging plate and the second energy exchanging plate comprises a passage (60, 70, 80) through a portion of the first energy exchanging plate and / or the second energy exchanging plate and further comprising a first end plate defining an inlet and a second end plate defining an outlet, the first end plate and the second end plate attached to opposite ends of the first pressure plate and the second pressure plate.
An element (A1, A2) fabricable with planar processing techniques, modularly associable to other similar elements for constituting a septum for a Seebeck/Peltier thermo-electric conversion device, comprising a stack of width corresponding to the thickness of the septum and a length corresponding to a dimension or fraction of a dimension of the surface area of the septum, the element having a population of nanowires of conductor or semiconductor material of high Seebeck coefficient, parallel and insulated from one another extending across the width of the stack, organized in rows and columns, said stack comprising: a) alternated layers of a first dielectric material depositable in continuous film of thickness less than or equal to 50 nm, etchable by a solution of a specific chemical compound, and of a second dielectric material of low heat conductivity not etchable by said solution; b) parallel trenches (T1, T2, T3,..., T i..) the lower limit of width ( w) of which corresponds to the minimum linewidth of lithographic definition, spaced by at least 1 μm; c) parallel cavities of retreat etched in said first dielectric material by said etching solution, along opposite surfaces of each trench; d) wirelike nanodimensioned residues of a conductor or semiconductor filler material of said parallel nanocavities constituting said parallel spaced nanowires organized in rows and columns. a) alternated layers of a first dielectric material depositable in continuous film of thickness less than or equal to 50 nm, etchable by a solution of a specific chemical compound, and of a second dielectric material of low heat conductivity not etchable by said solution; b) parallel trenches (T1, T2, T3,..., T i..) the lower limit of width ( w) of which corresponds to the minimum linewidth of lithographic definition, spaced by at least 1 μm; c) parallel cavities of retreat etched in said first dielectric material by said etching solution, along opposite surfaces of each trench; d) wirelike nanodimensioned residues of a conductor or semiconductor filler material of said parallel nanocavities constituting said parallel spaced nanowires organized in rows and columns.
A management system comprising: a management device, comprising: a first transmitter configured to transmit to a power conversion device a command requesting a state of the power conversion device,; and the power conversion device is configured to convert power output from a distributed power source, and to receive an output suppression message from an external server managed by a provider without passing through the management device, wherein the power conversion device is characterised by: a first communication unit configured to receive the output suppression message from the external server, a second communication unit configured to transmit, to the management device in response to the command sent by the management device requesting a state of the power conversion unit, a response command including a property, the property indicating a state of the power conversion device in response to the command, and the property including output suppression information on output suppression of the distributed power source based on output suppression information specified by the provider via the external server, wherein the output suppression information includes information indicating that the power conversion device has a function of informing that the power conversion device is performing the output suppression, or indicating that the power conversion device does not have the function. a management device, comprising: a first transmitter configured to transmit to a power conversion device a command requesting a state of the power conversion device,; and the power conversion device is configured to convert power output from a distributed power source, and a first transmitter configured to transmit to a power conversion device a command requesting a state of the power conversion device,; and the power conversion device is configured to convert power output from a distributed power source, and to receive an output suppression message from an external server managed by a provider without passing through the management device, wherein the power conversion device is characterised by: a first communication unit configured to receive the output suppression message from the external server, a second communication unit configured to transmit, to the management device in response to the command sent by the management device requesting a state of the power conversion unit, a response command including a property, the property indicating a state of the power conversion device in response to the command, and the property including output suppression information on output suppression of the distributed power source based on output suppression information specified by the provider via the external server, wherein the output suppression information includes information indicating that the power conversion device has a function of informing that the power conversion device is performing the output suppression, or indicating that the power conversion device does not have the function.
A process for manufacturing a (per)fluoropolymer, said process comprising polymerizing one or more fluorinated monomers in the presence of a multi-phase medium, said medium comprising: a water phase [phase]; at least one fluorinated surfactant [surfactant] having formula here below: R f -(OCF 2 CF 2) k-1 -O-CF 2 -COOX a wherein R f is a C 1 -C 3 perfluoroalkyl group comprising, optionally, one or more ether oxygen atoms, k is 2 or 3 and X a is selected from a monovalent metal and an ammonium group of formula NR N 4, wherein R N, equal or different at each occurrence, is a hydrogen atom or a C 1 -C 3 alkyl group; an oil phase [phase] comprising: - at least one non-functional (per)fluoropolyether (non-functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R F)] and - at least one functional (per)fluoropolyether (functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R' F)] and at least one functional end-group selected from carboxylic acid, phosphonic acid and sulphonic acid groups, and having a number average molecular weight of at least 1000 and a solubility of less than 1 % by weight in water at 25°C. a water phase [phase]; at least one fluorinated surfactant [surfactant] having formula here below: R f -(OCF 2 CF 2) k-1 -O-CF 2 -COOX a wherein R f is a C 1 -C 3 perfluoroalkyl group comprising, optionally, one or more ether oxygen atoms, k is 2 or 3 and X a is selected from a monovalent metal and an ammonium group of formula NR N 4, wherein R N, equal or different at each occurrence, is a hydrogen atom or a C 1 -C 3 alkyl group; an oil phase [phase] comprising: - at least one non-functional (per)fluoropolyether (non-functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R F)] and - at least one functional (per)fluoropolyether (functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R' F)] and at least one functional end-group selected from carboxylic acid, phosphonic acid and sulphonic acid groups, and having a number average molecular weight of at least 1000 and a solubility of less than 1 % by weight in water at 25°C. - at least one non-functional (per)fluoropolyether (non-functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R F)] and - at least one functional (per)fluoropolyether (functional PFPE) comprising at least one (per)fluoropolyoxyalkylene chain [chain (R' F)] and at least one functional end-group selected from carboxylic acid, phosphonic acid and sulphonic acid groups, and having a number average molecular weight of at least 1000 and a solubility of less than 1 % by weight in water at 25°C.
A method for wireless communication by a user equipment, UE, comprising: receiving, via a control channel, an order message instructing the UE to perform a random access channel, RACH, procedure; selecting to perform a first RACH procedure or a second RACH procedure; characterized in that the step of selecting to perform a first RACH procedure or a second RACH procedure is based at least in part on: a preamble preparation time gap between the order message and a first occasion for transmitting a RACH preamble, or a payload preparation time gap between the order message and an occasion for transmitting a RACH payload, or both. receiving, via a control channel, an order message instructing the UE to perform a random access channel, RACH, procedure; selecting to perform a first RACH procedure or a second RACH procedure; a preamble preparation time gap between the order message and a first occasion for transmitting a RACH preamble, or a payload preparation time gap between the order message and an occasion for transmitting a RACH payload, or both.
Measuring method for measuring a thickness of a coating of a component, in particular a heat-tolerant coating of a component of a gas turbine, - wherein a measuring device, in particular an optical scanner, measures coordinates of the component in three dimensions before and after coating, - wherein a thermal distortion of the component is detected during coating, - wherein the thickness of the coating is determined from a comparison of the measured component coordinates before and after coating, - wherein the thermal distortion of the component is taken into account when determining the thickness of the coating by comparison with at least one reference point at an uncoated location, characterised in that the method for determining a mass intensity distribution of a coating apparatus is used, and for this a plate-like component is coated at a predefined time without movement relative to the coating apparatus. - wherein a measuring device, in particular an optical scanner, measures coordinates of the component in three dimensions before and after coating, - wherein a thermal distortion of the component is detected during coating, - wherein the thickness of the coating is determined from a comparison of the measured component coordinates before and after coating, - wherein the thermal distortion of the component is taken into account when determining the thickness of the coating by comparison with at least one reference point at an uncoated location,
Measuring device for measuring bioluminescence, chemoluminescence, or fluorescence of plants, with: - a lightproof housing surrounding a measuring chamber, and a high-sensitivity camera looking into the measuring chamber, wherein a vertically extending rotary axis is arranged in the measuring chamber for the arrangement of a rotary plate, - a rotary plate, which is arranged on the rotary axis at least for measuring, wherein in a first operational state, the viewing direction of the camera is essentially horizontal, i.e. perpendicular to the rotary axis, wherein the rotary plate comprises retaining devices for a plurality of vertically standing plant cassettes, wherein an irradiation device is provided for the radiating of simulated daylight from above into the direction of the rotary plate in its measuring position, wherein the irradiation device comprises a plurality of individual elements (70, 70'), which each carry at least 3 LED's, and wherein a fluorescence excitation source separate from the irradiation device is provided, which points in the direction of the rotary plate in its measuring position. - a lightproof housing surrounding a measuring chamber, and a high-sensitivity camera looking into the measuring chamber, wherein a vertically extending rotary axis is arranged in the measuring chamber for the arrangement of a rotary plate, - a rotary plate, which is arranged on the rotary axis at least for measuring,