A semiconductor device manufacturing method comprising: a step A of obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate, with a first pre-sintering layer sandwiched therebetween; a step B of, after the step A, temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate, with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and a step C of, after the step B, simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode, wherein the step A comprises: a step A-1 of preparing a lower substrate including the first insulating substrate and the first electrode formed on the first insulating substrate; a step A-2 of preparing the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface; and a step A-3 of temporarily adhering the semiconductor element prepared in the step A-2 on the first electrode with the first pre-sintering layer sandwiched therebetween, and wherein, in the step A-2, the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface is obtained by the following steps X and Y: the step X of stacking the first pre-sintering layer which is in the form of a sheet on one surface of a semiconductor wafer and stacking the second pre-sintering layer which is in the form of a sheet on the other surface of the semiconductor wafer, to obtain the semiconductor wafer including the sheet-like pre-sintering layer (52, 54) formed on each surface; and the step Y of making the semiconductor wafer obtained in the step X and including the sheet-like pre-sintering layer (52, 54) formed on each of both the surfaces into individual pieces. a step A of obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate, with a first pre-sintering layer sandwiched therebetween; a step B of, after the step A, temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate, with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and a step C of, after the step B, simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode, wherein the step A comprises: a step A-1 of preparing a lower substrate including the first insulating substrate and the first electrode formed on the first insulating substrate; a step A-2 of preparing the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface; and a step A-3 of temporarily adhering the semiconductor element prepared in the step A-2 on the first electrode with the first pre-sintering layer sandwiched therebetween, and wherein, in the step A-2, the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface is obtained by the following steps X and Y: the step X of stacking the first pre-sintering layer which is in the form of a sheet on one surface of a semiconductor wafer and stacking the second pre-sintering layer which is in the form of a sheet on the other surface of the semiconductor wafer, to obtain the semiconductor wafer including the sheet-like pre-sintering layer (52, 54) formed on each surface; and the step Y of making the semiconductor wafer obtained in the step X and including the sheet-like pre-sintering layer (52, 54) formed on each of both the surfaces into individual pieces. a step A-1 of preparing a lower substrate including the first insulating substrate and the first electrode formed on the first insulating substrate; a step A-2 of preparing the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface; and a step A-3 of temporarily adhering the semiconductor element prepared in the step A-2 on the first electrode with the first pre-sintering layer sandwiched therebetween, and wherein, in the step A-2, the semiconductor element in which the first pre-sintering layer is stacked on one surface and the second pre-sintering layer is stacked on the other surface is obtained by the following steps X and Y: the step X of stacking the first pre-sintering layer which is in the form of a sheet on one surface of a semiconductor wafer and stacking the second pre-sintering layer which is in the form of a sheet on the other surface of the semiconductor wafer, to obtain the semiconductor wafer including the sheet-like pre-sintering layer (52, 54) formed on each surface; and the step Y of making the semiconductor wafer obtained in the step X and including the sheet-like pre-sintering layer (52, 54) formed on each of both the surfaces into individual pieces.