A semiconductor device comprising: an electronic switch (T 1) that is configured to switch a load current path between a supply terminal having a supply voltage (V S) and an output circuit node (OUT 1) on and off in accordance with an input signal (IN 1); an over-current detector (14, 15) that is configured to compare a load current signal (S C) that represents the load current (i L) passing through the load current path with an over-current threshold (S TH) and to signal an over-current (S OC) when the load current signal (S C) reaches or exceeds the over-current threshold (S TH); and a control unit operable in a first and a second state of operation and configured to: generate a control signal (S ON1) to switch the electronic switch (T 1) on and off in accordance with the input signal (IN 1), set the over-current threshold (S TH) to a first, higher value (S HI) while in the first state of operation and to a second, lower value (S LO) while in the second state of operation, and at least temporarily switch the electronic switch (T 1) off when an over-current is signalled, characterised in that the control unit is further configured to: change from the first state of operation to the second state of operation when a first pre-defined time span (T ONmax) has elapsed since a switch-on of the electronic switch (T 1), and change from the second state of operation to the first state of operation when the electronic switch (T 1) is off for more than a second pre-defined time span (T OFFmin); and the semiconductor device further comprises a first timer configured to measure an off-time (T OFF) of the electronic switch (T 1), the first timer being reset each time the electronic switch (T 1) is activated and only actively measuring the off-time when the electronic switch (T 1) is off. an electronic switch (T 1) that is configured to switch a load current path between a supply terminal having a supply voltage (V S) and an output circuit node (OUT 1) on and off in accordance with an input signal (IN 1); an over-current detector (14, 15) that is configured to compare a load current signal (S C) that represents the load current (i L) passing through the load current path with an over-current threshold (S TH) and to signal an over-current (S OC) when the load current signal (S C) reaches or exceeds the over-current threshold (S TH); and a control unit operable in a first and a second state of operation and configured to: generate a control signal (S ON1) to switch the electronic switch (T 1) on and off in accordance with the input signal (IN 1), set the over-current threshold (S TH) to a first, higher value (S HI) while in the first state of operation and to a second, lower value (S LO) while in the second state of operation, and at least temporarily switch the electronic switch (T 1) off when an over-current is signalled, characterised in that the control unit is further configured to: change from the first state of operation to the second state of operation when a first pre-defined time span (T ONmax) has elapsed since a switch-on of the electronic switch (T 1), and change from the second state of operation to the first state of operation when the electronic switch (T 1) is off for more than a second pre-defined time span (T OFFmin); and the semiconductor device further comprises a first timer configured to measure an off-time (T OFF) of the electronic switch (T 1), the first timer being reset each time the electronic switch (T 1) is activated and only actively measuring the off-time when the electronic switch (T 1) is off. generate a control signal (S ON1) to switch the electronic switch (T 1) on and off in accordance with the input signal (IN 1), set the over-current threshold (S TH) to a first, higher value (S HI) while in the first state of operation and to a second, lower value (S LO) while in the second state of operation, and at least temporarily switch the electronic switch (T 1) off when an over-current is signalled, the control unit is further configured to: change from the first state of operation to the second state of operation when a first pre-defined time span (T ONmax) has elapsed since a switch-on of the electronic switch (T 1), and change from the second state of operation to the first state of operation when the electronic switch (T 1) is off for more than a second pre-defined time span (T OFFmin); and the semiconductor device further comprises a first timer configured to measure an off-time (T OFF) of the electronic switch (T 1), the first timer being reset each time the electronic switch (T 1) is activated and only actively measuring the off-time when the electronic switch (T 1) is off. change from the first state of operation to the second state of operation when a first pre-defined time span (T ONmax) has elapsed since a switch-on of the electronic switch (T 1), and change from the second state of operation to the first state of operation when the electronic switch (T 1) is off for more than a second pre-defined time span (T OFFmin); and the semiconductor device further comprises a first timer configured to measure an off-time (T OFF) of the electronic switch (T 1), the first timer being reset each time the electronic switch (T 1) is activated and only actively measuring the off-time when the electronic switch (T 1) is off.