A bipolar transistor (300, 350) comprising: a substrate; a collector (302, 352) comprising a plurality of alternating doped regions (303a-e, 353a-e), wherein the plurality of alternating doped regions form columns that alternate in a lateral direction from a net first conductivity to a net second conductivity which is opposite to the net first conductivity; a collector contact (314, 364) in electrical contact with the collector; a doped buried layer (304, 354) below the collector; a base (306, 356) in electrical contact with a base contact (312, 362), wherein the base (306, 356) is doped to a net second conductivity type and wherein the base (306, 356) spans a portion of the plurality of alternating doped regions (303a-e, 353a-e); and an emitter (310, 360) disposed within the base (306, 356), the emitter (310, 360) doped to a net first conductivity type, wherein a first portion of the alternating doped region (303c, 353b) under the emitter (310, 360) is doped to the net first conductivity type, wherein the first portion of the alternating doped region (303c, 353b) disposed under the emitter (310, 360) is a collector column, wherein the collector column under the emitter (310, 360) is self-aligned to the emitter (310, 360), wherein an integral across the width of the first portion of the alternating doped region (303c, 353b) under the emitter (310, 360) has a value of less than about 3E12 ions/cm 2, such that the collector column totally depletes at a reverse bias collector base voltage of magnitude less than an absolute value of BVceo; and a second portion of the alternating doped region (303b, 303d, 353a, 353c) adjacent to the first portion of the alternating doped region (303c, 353b), wherein the second portion of the alternating doped region (303b, 303d, 353a, 353c) is doped to the net second conductivity type to a sufficient concentration such that the second portion does not totally deplete at the reverse bias. a substrate; a collector (302, 352) comprising a plurality of alternating doped regions (303a-e, 353a-e), wherein the plurality of alternating doped regions form columns that alternate in a lateral direction from a net first conductivity to a net second conductivity which is opposite to the net first conductivity; a collector contact (314, 364) in electrical contact with the collector; a doped buried layer (304, 354) below the collector; a base (306, 356) in electrical contact with a base contact (312, 362), wherein the base (306, 356) is doped to a net second conductivity type and wherein the base (306, 356) spans a portion of the plurality of alternating doped regions (303a-e, 353a-e); and an emitter (310, 360) disposed within the base (306, 356), the emitter (310, 360) doped to a net first conductivity type, wherein a first portion of the alternating doped region (303c, 353b) under the emitter (310, 360) is doped to the net first conductivity type, wherein the first portion of the alternating doped region (303c, 353b) disposed under the emitter (310, 360) is a collector column, wherein the collector column under the emitter (310, 360) is self-aligned to the emitter (310, 360), wherein an integral across the width of the first portion of the alternating doped region (303c, 353b) under the emitter (310, 360) has a value of less than about 3E12 ions/cm 2, such that the collector column totally depletes at a reverse bias collector base voltage of magnitude less than an absolute value of BVceo; and a second portion of the alternating doped region (303b, 303d, 353a, 353c) adjacent to the first portion of the alternating doped region (303c, 353b), wherein the second portion of the alternating doped region (303b, 303d, 353a, 353c) is doped to the net second conductivity type to a sufficient concentration such that the second portion does not totally deplete at the reverse bias.