Semiconductor structure for controlling and switching a current comprising at least: a) a switch element (110, 111) with a1) a first semiconductor area of a first type of conduction which is contacted by means of an anode electrode and a cathode electrode and within which a path extends for the current, a2) a first depletion zone arranged at least partially within the first semiconductor area, which can be influenced by means of a control voltage present at a control electrode for the purpose of controlling the current, and a3) an island area buried at least partially within the first semiconductor area of a second type of conduction which is opposite to the first type of conduction, which island area is contacted on a surface by the cathode electrode which is opposite the anode electrode, b) an edge element comprising b1) an edge area, buried at least partially within the first semiconductor area, of the second type of conduction which is arranged at the same level as the buried island area, and b2) an edge termination area of the second type of conduction, adjoining the edge area, b3) an electrically conductive connection existing between the control electrode and the edge area. a) a switch element (110, 111) with a1) a first semiconductor area of a first type of conduction which is contacted by means of an anode electrode and a cathode electrode and within which a path extends for the current, a2) a first depletion zone arranged at least partially within the first semiconductor area, which can be influenced by means of a control voltage present at a control electrode for the purpose of controlling the current, and a3) an island area buried at least partially within the first semiconductor area of a second type of conduction which is opposite to the first type of conduction, which island area is contacted on a surface by the cathode electrode which is opposite the anode electrode, a1) a first semiconductor area of a first type of conduction which is contacted by means of an anode electrode and a cathode electrode and within which a path extends for the current, a2) a first depletion zone arranged at least partially within the first semiconductor area, which can be influenced by means of a control voltage present at a control electrode for the purpose of controlling the current, and a3) an island area buried at least partially within the first semiconductor area of a second type of conduction which is opposite to the first type of conduction, which island area is contacted on a surface by the cathode electrode which is opposite the anode electrode, b) an edge element comprising b1) an edge area, buried at least partially within the first semiconductor area, of the second type of conduction which is arranged at the same level as the buried island area, and b2) an edge termination area of the second type of conduction, adjoining the edge area, b3) an electrically conductive connection existing between the control electrode and the edge area. b1) an edge area, buried at least partially within the first semiconductor area, of the second type of conduction which is arranged at the same level as the buried island area, and b2) an edge termination area of the second type of conduction, adjoining the edge area, b3) an electrically conductive connection existing between the control electrode and the edge area.