A method of creating device features on a semiconductor device structure, the method comprising: creating a first pattern of negative photoresist features overlying a target material of the semiconductor device structure, the first pattern of negative photoresist features defined by a first component photolithographic mask, wherein the first pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations; creating a second pattern of negative photoresist features (342, 344, 346, 348) overlying the target material, the second pattern of negative photoresist features (342, 344, 346, 348) based on modifying a second component photolithographic mask having design rule violations, the first pattern of negative photoresist features and the second pattern of negative photoresist features (342, 344, 346, 348) together forming a combined pattern of negative photoresist features, wherein the second pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations, and wherein the combined pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations; selectively etching the target material, using the combined pattern of negative photoresist features as an etch mask, resulting in a recess line pattern formed in the target material; and after selectively etching the target material, forming a third pattern of positive photoresist features that intersect and cover designated sections of the recess line pattern corresponding to design rule violations in the second component photolithographic mask, wherein the third pattern of positive photoresist features is void of tip-to-tip and tip-to-line design rule violations. creating a first pattern of negative photoresist features overlying a target material of the semiconductor device structure, the first pattern of negative photoresist features defined by a first component photolithographic mask, wherein the first pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations; creating a second pattern of negative photoresist features (342, 344, 346, 348) overlying the target material, the second pattern of negative photoresist features (342, 344, 346, 348) based on modifying a second component photolithographic mask having design rule violations, the first pattern of negative photoresist features and the second pattern of negative photoresist features (342, 344, 346, 348) together forming a combined pattern of negative photoresist features, wherein the second pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations, and wherein the combined pattern of negative photoresist features is void of tip-to-tip and tip-to-line design rule violations; selectively etching the target material, using the combined pattern of negative photoresist features as an etch mask, resulting in a recess line pattern formed in the target material; and after selectively etching the target material, forming a third pattern of positive photoresist features that intersect and cover designated sections of the recess line pattern corresponding to design rule violations in the second component photolithographic mask, wherein the third pattern of positive photoresist features is void of tip-to-tip and tip-to-line design rule violations.