A current collector (10, 20), characterized in comprising: an insulation layer (101, 201); at least one conductive layer (102, 202) located above at least one surface of the insulation layer (101, 201), the insulation layer (101, 201) is used to support the at least one conductive layer (102, 202), the at least one conductive layer (102, 202) is used to support an electrode active material layer (11, 21) located on a surface of the current collector (10, 20), and the at least one conductive layer (102, 202) each has a thickness of D2, wherein 300nm≤D2≤2μm; a first protective layer (103, 203) provided on a surface of each of the at least one conductive layer (102, 202) facing towards the insulation layer (101, 201), wherein the first protective layer (103, 203) is made of a material selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of chromium, nickel-based alloy, or copper-based alloy, and the metal oxide is at least one of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and a second protective layer (103, 203) provided on a surface of the at least one conductive layer (102, 202) facing away from the insulation layer (101, 201), wherein the second protective layer (103, 203) is made of a metallic material, which is selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of nickel, chromium, nickel-based alloy, copper-based alloy, or combinations thereof, and the metal oxide is aluminum oxide or nickel oxide, wherein the first protective layer (103, 203) has a thickness of D3, and D3≤1/10D2 and 1nm≤D3≤200nm, the second protective layer (103, 203) has a thickness of D3', and D3'≤1/10D2 and 1nm≤D3'≤200nm, the thickness D3' of the second protective layer (103, 203) is larger than the thickness D3 of the first protective layer (103, 203); and 1/2 D3'≤D3≤4/5 D3'. an insulation layer (101, 201); at least one conductive layer (102, 202) located above at least one surface of the insulation layer (101, 201), the insulation layer (101, 201) is used to support the at least one conductive layer (102, 202), the at least one conductive layer (102, 202) is used to support an electrode active material layer (11, 21) located on a surface of the current collector (10, 20), and the at least one conductive layer (102, 202) each has a thickness of D2, wherein 300nm≤D2≤2μm; a first protective layer (103, 203) provided on a surface of each of the at least one conductive layer (102, 202) facing towards the insulation layer (101, 201), wherein the first protective layer (103, 203) is made of a material selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of chromium, nickel-based alloy, or copper-based alloy, and the metal oxide is at least one of aluminum oxide, cobalt oxide, chromium oxide, or nickel oxide; and a second protective layer (103, 203) provided on a surface of the at least one conductive layer (102, 202) facing away from the insulation layer (101, 201), wherein the second protective layer (103, 203) is made of a metallic material, which is selected from a group consisting of metal and metal oxide, or combinations thereof, the metal is at least one of nickel, chromium, nickel-based alloy, copper-based alloy, or combinations thereof, and the metal oxide is aluminum oxide or nickel oxide, wherein the first protective layer (103, 203) has a thickness of D3, and D3≤1/10D2 and 1nm≤D3≤200nm, the second protective layer (103, 203) has a thickness of D3', and D3'≤1/10D2 and 1nm≤D3'≤200nm, the thickness D3' of the second protective layer (103, 203) is larger than the thickness D3 of the first protective layer (103, 203); and 1/2 D3'≤D3≤4/5 D3'.