A lighting structure comprising: a semiconductor light emitting device on a substrate; and a flat wavelength converting element attached to the substrate opposite to the semiconductor light emitting device, an area of the wavelength converting element being greater but no more than 200% than an area of a top surface of the semiconductor light emitting device and the substrate; the flat wavelength converting element comprising: a wavelength converting layer attached to the substrate for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength; and a transparent layer attached to the wavelength converting layer opposite to the substrate such that the transparent layer forms the top surface of the lighting structure, wherein the wavelength converting layer is formed on the transparent layer, the lighting structure further comprising a reflective material (36, 42) disposed on the sides of the semiconductor light emitting device, wherein the reflective material covers the side surfaces of the semiconductor light emitting device, the substrate and the wavelength converting layer, wherein the top surface of the reflective material is below the top surface of the transparent layer. a semiconductor light emitting device on a substrate; and a flat wavelength converting element attached to the substrate opposite to the semiconductor light emitting device, an area of the wavelength converting element being greater but no more than 200% than an area of a top surface of the semiconductor light emitting device and the substrate; the flat wavelength converting element comprising: a wavelength converting layer attached to the substrate for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength; and a transparent layer attached to the wavelength converting layer opposite to the substrate such that the transparent layer forms the top surface of the lighting structure, wherein the wavelength converting layer is formed on the transparent layer, the lighting structure further comprising a reflective material (36, 42) disposed on the sides of the semiconductor light emitting device, wherein the reflective material covers the side surfaces of the semiconductor light emitting device, the substrate and the wavelength converting layer, wherein the top surface of the reflective material is below the top surface of the transparent layer. a wavelength converting layer attached to the substrate for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength; and a transparent layer attached to the wavelength converting layer opposite to the substrate such that the transparent layer forms the top surface of the lighting structure, wherein the wavelength converting layer is formed on the transparent layer, the lighting structure further comprising a reflective material (36, 42) disposed on the sides of the semiconductor light emitting device, wherein the reflective material covers the side surfaces of the semiconductor light emitting device, the substrate and the wavelength converting layer, wherein the top surface of the reflective material is below the top surface of the transparent layer.