A solid-state imaging device, comprising: a semiconductor substrate having a plurality of two-dimensionally arranged photoelectric conversion elements; a plurality of microlenses arranged above the semiconductor substrate and collecting incident light to the photoelectric conversion elements; color filters (14, 15, 16) of respective colors provided between the semiconductor substrate and the microlenses and arranged according to a preset rule so as to correspond to the respective photoelectric conversion elements; and barriers, that block light, each provided between the color filters (14, 15, 16) of respective colors, wherein: each of the barriers includes a first wall portion provided at a sidewall of a first color filter that is a color filter of one color among the color filters of respective colors, wherein the first wall portion contains a reaction product of a first color filter material contained in the first color filter and a dry etching gas, wherein the device further comprises a barrier material layer (30, 40) which is provided under the first color filter and transmitting visible light, characterized in that said each of the barriers further includes a second wall portion provided at a sidewall of the barrier material layer (30, 40) and also on the outside of the first wall portion, wherein the second wall portion contains a reaction product of a barrier material contained in the barrier material layer (30, 40) and the dry etching gas. a semiconductor substrate having a plurality of two-dimensionally arranged photoelectric conversion elements; a plurality of microlenses arranged above the semiconductor substrate and collecting incident light to the photoelectric conversion elements; color filters (14, 15, 16) of respective colors provided between the semiconductor substrate and the microlenses and arranged according to a preset rule so as to correspond to the respective photoelectric conversion elements; and barriers, that block light, each provided between the color filters (14, 15, 16) of respective colors, wherein: each of the barriers includes a first wall portion provided at a sidewall of a first color filter that is a color filter of one color among the color filters of respective colors, wherein the first wall portion contains a reaction product of a first color filter material contained in the first color filter and a dry etching gas, wherein the device further comprises a barrier material layer (30, 40) which is provided under the first color filter and transmitting visible light, characterized in that said each of the barriers further includes a second wall portion provided at a sidewall of the barrier material layer (30, 40) and also on the outside of the first wall portion, wherein the second wall portion contains a reaction product of a barrier material contained in the barrier material layer (30, 40) and the dry etching gas. each of the barriers includes a first wall portion provided at a sidewall of a first color filter that is a color filter of one color among the color filters of respective colors, wherein the first wall portion contains a reaction product of a first color filter material contained in the first color filter and a dry etching gas, wherein the device further comprises a barrier material layer (30, 40) which is provided under the first color filter and transmitting visible light, characterized in that said each of the barriers further includes a second wall portion provided at a sidewall of the barrier material layer (30, 40) and also on the outside of the first wall portion, wherein the second wall portion contains a reaction product of a barrier material contained in the barrier material layer (30, 40) and the dry etching gas.