A memory (140, 200, 612, 714, 960, 1010, 1012), comprising: at least one spin-transfer torque, STT, memory device; a temperature sensor proximate the at least one STT memory device; and a controller comprising logic, at least partially including hardware logic, to: monitor an output of the temperature sensor; implement a first write operation protocol on the at least one STT memory device when the output of the temperature sensor fails to exceed a threshold temperature; and implement a second write operation protocol on the at least one STT memory device when the output of the temperature sensor exceeds the threshold temperature; wherein the logic to implement a first write operation protocol further comprises logic to: receive write data from a host device; determine a physical memory address for the write data; read data from memory cells in the physical memory address compare the data read from the physical memory address to the write data; and write data only to the data cells that are modified by the write data; and wherein the logic to implement a second write protocol further comprises logic to: receive write data from a host device; determine a physical memory address for the write data; and write the data to the physical memory address in response to determining the physical memory address for the write data. at least one spin-transfer torque, STT, memory device; a temperature sensor proximate the at least one STT memory device; and a controller comprising logic, at least partially including hardware logic, to: monitor an output of the temperature sensor; implement a first write operation protocol on the at least one STT memory device when the output of the temperature sensor fails to exceed a threshold temperature; and implement a second write operation protocol on the at least one STT memory device when the output of the temperature sensor exceeds the threshold temperature; monitor an output of the temperature sensor; implement a first write operation protocol on the at least one STT memory device when the output of the temperature sensor fails to exceed a threshold temperature; and implement a second write operation protocol on the at least one STT memory device when the output of the temperature sensor exceeds the threshold temperature; wherein the logic to implement a first write operation protocol further comprises logic to: receive write data from a host device; determine a physical memory address for the write data; read data from memory cells in the physical memory address compare the data read from the physical memory address to the write data; and write data only to the data cells that are modified by the write data; and receive write data from a host device; determine a physical memory address for the write data; read data from memory cells in the physical memory address compare the data read from the physical memory address to the write data; and write data only to the data cells that are modified by the write data; and wherein the logic to implement a second write protocol further comprises logic to: receive write data from a host device; determine a physical memory address for the write data; and write the data to the physical memory address in response to determining the physical memory address for the write data. receive write data from a host device; determine a physical memory address for the write data; and write the data to the physical memory address in response to determining the physical memory address for the write data.