A semiconductor light emitting device comprising: a semiconductor layer including a first semiconductor layer and a second semiconductor layer including a light emitting layer, said first semiconductor layer having a first major surface and a second major surface formed on an opposite side to the first major surface; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on the opposite surface of the second semiconductor layer with respect to the surface in contact with the first semiconductor layer; an insulating film provided on a side of the second major surface of the first semiconductor layer and including a first opening reaching the first electrode and a second opening reaching the second electrode; a first interconnection provided on a surface of the insulating film on the opposite side to the semiconductor layer and in the first opening and connected to the first electrode; a second interconnection provided on a surface of the insulating film on the opposite side to the semiconductor layer and in the second opening and connected to the second electrode; a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode, the first metal pillar having a connectable end portion; a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode, the second metal pillar having a connectable end portion; a resin provided between the first metal pillar and the second metal pillar; and a fluorescent layer provided on the first major surface side without a substrate between the first major surface and the fluorescent layer, the fluorescent layer including a plurality of kinds of fluorescent materials having different peak wavelengths of emission light. a semiconductor layer including a first semiconductor layer and a second semiconductor layer including a light emitting layer, said first semiconductor layer having a first major surface and a second major surface formed on an opposite side to the first major surface; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on the opposite surface of the second semiconductor layer with respect to the surface in contact with the first semiconductor layer; an insulating film provided on a side of the second major surface of the first semiconductor layer and including a first opening reaching the first electrode and a second opening reaching the second electrode; a first interconnection provided on a surface of the insulating film on the opposite side to the semiconductor layer and in the first opening and connected to the first electrode; a second interconnection provided on a surface of the insulating film on the opposite side to the semiconductor layer and in the second opening and connected to the second electrode; a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode, the first metal pillar having a connectable end portion; a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode, the second metal pillar having a connectable end portion; a resin provided between the first metal pillar and the second metal pillar; and a fluorescent layer provided on the first major surface side without a substrate between the first major surface and the fluorescent layer, the fluorescent layer including a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.