An insulated-gate bipolar transistor semiconductor device comprising: a semiconductor die having an active area comprising an array of active cells; a first portion of the active area being composed of cells in accordance with first selected cell design parameters, wherein the first selected cell design parameters determine physical dimensions of each cell in the first portion of the active area, and wherein the first portion constitutes the central portion of the active area; a second portion of the active area being composed of cells in accordance with second selected cell design parameters, wherein the second selected cell design parameters determine physical dimensions of each cell in the second portion of the active area, wherein the second selected cells design parameters vary from the first selected cell design parameters, and wherein the cells of the first portion are surrounded by the cells of the second portion; a third portion of the active area being composed of cells in accordance with third selected cell design parameters, wherein the third selected cell design parameters determine physical dimensions of each cell in the third portion of the active area, wherein the third selected cell design parameters vary from the first selected cell design parameters, wherein the third selected cells have design parameters that vary from the second selected cell design parameters, and wherein the cells of the second portion are surrounded by the cells of the third portion; wherein said cells of the first portion, said cells of the second portion, and said cells of the third portion each have different channel widths, wherein the channel width of said cells of the third portion is greater than the channel width of said cells of the second portion, wherein the channel width of said cells of the second portion is greater than the channel width of said cells of the first portion, and wherein some of the cells in the active area are fabricated with only a p-well and with no n+ source area. a semiconductor die having an active area comprising an array of active cells; a first portion of the active area being composed of cells in accordance with first selected cell design parameters, wherein the first selected cell design parameters determine physical dimensions of each cell in the first portion of the active area, and wherein the first portion constitutes the central portion of the active area; a second portion of the active area being composed of cells in accordance with second selected cell design parameters, wherein the second selected cell design parameters determine physical dimensions of each cell in the second portion of the active area, wherein the second selected cells design parameters vary from the first selected cell design parameters, and wherein the cells of the first portion are surrounded by the cells of the second portion; a third portion of the active area being composed of cells in accordance with third selected cell design parameters, wherein the third selected cell design parameters determine physical dimensions of each cell in the third portion of the active area, wherein the third selected cell design parameters vary from the first selected cell design parameters, wherein the third selected cells have design parameters that vary from the second selected cell design parameters, and wherein the cells of the second portion are surrounded by the cells of the third portion; wherein said cells of the first portion, said cells of the second portion, and said cells of the third portion each have different channel widths, wherein the channel width of said cells of the third portion is greater than the channel width of said cells of the second portion, wherein the channel width of said cells of the second portion is greater than the channel width of said cells of the first portion, and wherein some of the cells in the active area are fabricated with only a p-well and with no n+ source area.