A combined indirect-bandgap-semiconductor, light-emitting diode, light modulator and integrated-circuit device, said device comprising: an integrated-circuit; and a combined indirect-bandgap-semiconductor, light-emitting diode and light modulator device comprising: a light-emitting diode integrated with a light modulator, the light-emitting diode comprising a plurality of portions, the light modulator being optically coupled with at least one of said plurality of portions for modulating light emitted from said at least one of said portions, wherein said light modulator is configured to receive a signal from said integrated circuit for modulating light emitted from said at least one of said portions; wherein said integrated circuit further comprises a complementary-metal-oxide-semiconductor (CMOS) silicon integrated circuit; characterized in that: the light-emitting diode is an indirect-bandgap-semiconductor light-emitting diode whereby: the plurality of portions comprises: a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of an indirect-bandgap semiconductor, and a n-doped portion of an indirect-bandgap semiconductor, said intrinsic portion disposed between said p-doped portion and said n-doped portion configured to form a p-i junction with said p-doped portion and an i-n junction with said n-doped portion; wherein said p-i junction and said i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in said intrinsic portion when said indirect-bandgap, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole; and the device further comprising a voltage source making contact with the p-doped portion and the n-doped portion, the voltage source configured to apply a reverse voltage bias causing a current to flow such that majority carriers in the p-doped portion are holes, which flow to a negative terminal of the voltage source and the majority carriers in the n-doped portion are electrons which flow to a positive terminal of the voltage source. an integrated-circuit; and a combined indirect-bandgap-semiconductor, light-emitting diode and light modulator device comprising: a light-emitting diode integrated with a light modulator, the light-emitting diode comprising a plurality of portions, the light modulator being optically coupled with at least one of said plurality of portions for modulating light emitted from said at least one of said portions, wherein said light modulator is configured to receive a signal from said integrated circuit for modulating light emitted from said at least one of said portions; wherein said integrated circuit further comprises a complementary-metal-oxide-semiconductor (CMOS) silicon integrated circuit; characterized in that: the light-emitting diode is an indirect-bandgap-semiconductor light-emitting diode whereby: the plurality of portions comprises: a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of an indirect-bandgap semiconductor, and a n-doped portion of an indirect-bandgap semiconductor, said intrinsic portion disposed between said p-doped portion and said n-doped portion configured to form a p-i junction with said p-doped portion and an i-n junction with said n-doped portion; wherein said p-i junction and said i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in said intrinsic portion when said indirect-bandgap, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole; and the device further comprising a voltage source making contact with the p-doped portion and the n-doped portion, the voltage source configured to apply a reverse voltage bias causing a current to flow such that majority carriers in the p-doped portion are holes, which flow to a negative terminal of the voltage source and the majority carriers in the n-doped portion are electrons which flow to a positive terminal of the voltage source.