A thin film gas sensor device comprising: a substrate; a first pillar supported by the substrate; a second pillar supported by the substrate; a third pillar supported by the substrate; a fourth pillar supported by the substrate; an insulator layer extending from the third pillar to the fourth pillar and defining a left base portion, a right base portion, and a serpentine portion extending from the left base portion to the right base portion; a heater layer formed on the insulator layer and supported by the third and the fourth pillars (138, 140) so that a serpentine portion of the heater layer is extending from the third pillar to the fourth pillar; a first contact portion arranged on the third pillar and a second contact portion arranged on the fourth pillar, the first and second contact portions electrically connecting the heater layer to the third and fourth pillars (138, 140), such that, when an electrical current is applied directly to the heater layer through the third and fourth pillars (138, 140), electrical energy is flowing from the third and fourth pillar (138, 140) through the serpentine portion of the heater layer; a nanostructured thin film layer formed with a semi-conductor material including holes, wherein the semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas thereby increasing an electrical resistance of the nanostructured thin film layer, wherein the nanostructured thin film layer is supported by the first and the second pillars (134, 136) so that a suspended portion of the nanostructured thin film layer comprising a serpentine portion extending from the first pillar to the second pillar is suspended above the substrate; and a first electrical contact arranged on first pillar and a second electrical contact arranged on the second pillar, the first and second electrical contacts being operably connected to the nanostructured thin film layer such that the increase in electrical resistance can be detected, characterized by a seed layer that extends from the first pillar to the second pillar and defines a first base portion, a second base portion, and a serpentine portion extending from the first base portion to the second base portion, wherein the serpentine portion of the seed layer is formed on the heater layer and the nanostructured thin film layer is formed on the seed layer and has a shape corresponding to the shape of the seed layer, and wherein the heater layer is configured to joule heat the nanostructured thin film layer to a predetermined operating temperature. a substrate; a first pillar supported by the substrate; a second pillar supported by the substrate; a third pillar supported by the substrate; a fourth pillar supported by the substrate; an insulator layer extending from the third pillar to the fourth pillar and defining a left base portion, a right base portion, and a serpentine portion extending from the left base portion to the right base portion; a heater layer formed on the insulator layer and supported by the third and the fourth pillars (138, 140) so that a serpentine portion of the heater layer is extending from the third pillar to the fourth pillar; a first contact portion arranged on the third pillar and a second contact portion arranged on the fourth pillar, the first and second contact portions electrically connecting the heater layer to the third and fourth pillars (138, 140), such that, when an electrical current is applied directly to the heater layer through the third and fourth pillars (138, 140), electrical energy is flowing from the third and fourth pillar (138, 140) through the serpentine portion of the heater layer; a nanostructured thin film layer formed with a semi-conductor material including holes, wherein the semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas thereby increasing an electrical resistance of the nanostructured thin film layer, wherein the nanostructured thin film layer is supported by the first and the second pillars (134, 136) so that a suspended portion of the nanostructured thin film layer comprising a serpentine portion extending from the first pillar to the second pillar is suspended above the substrate; and a first electrical contact arranged on first pillar and a second electrical contact arranged on the second pillar, the first and second electrical contacts being operably connected to the nanostructured thin film layer such that the increase in electrical resistance can be detected, characterized by a seed layer that extends from the first pillar to the second pillar and defines a first base portion, a second base portion, and a serpentine portion extending from the first base portion to the second base portion, wherein the serpentine portion of the seed layer is formed on the heater layer and the nanostructured thin film layer is formed on the seed layer and has a shape corresponding to the shape of the seed layer, and wherein the heater layer is configured to joule heat the nanostructured thin film layer to a predetermined operating temperature.