A method of forming a structure, the method comprising: - forming a first opening in a masking layer disposed over a substrate, the substrate comprising a first semiconductor material; - forming a second opening in the masking layer: - forming, within the first opening and the second opening, a first layer comprising a second semiconductor material lattice-mismatched to the first semiconductor material, the first layer having a thickness sufficient to extend above a top surface of the masking layer; - forming, on the first layer and over at least a portion of the masking layer, a second layer comprising the second semiconductor material, wherein a vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer; - forming, on the second layer, a third layer comprising the second semiconductor material, wherein the third layer coalesces between the first opening and the second opening, doping the third layer slows facet growth in the third layer and reduces stacking fault formation in the third layer, and the second semiconductor material comprises germanium and p-type dopants; - forming a fourth layer on top of the third layer, the fourth layer comprising a third semiconductor material; - forming a fifth layer on top of the fourth layer, the fifth layer comprising a fourth semiconductor material; - bonding the fifth layer to a handle wafer; and - removing the substrate, wherein the third semiconductor material and the fourth semiconductor material each comprise III-V materials, the substrate comprises silicon, a bandgap of the third semiconductor material is greater than a bandgap of the fourth semiconductor material, and the structure comprises a multi-junction photovoltaic cell. - forming a first opening in a masking layer disposed over a substrate, the substrate comprising a first semiconductor material; - forming a second opening in the masking layer: - forming, within the first opening and the second opening, a first layer comprising a second semiconductor material lattice-mismatched to the first semiconductor material, the first layer having a thickness sufficient to extend above a top surface of the masking layer; - forming, on the first layer and over at least a portion of the masking layer, a second layer comprising the second semiconductor material, wherein a vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer; - forming, on the second layer, a third layer comprising the second semiconductor material, wherein the third layer coalesces between the first opening and the second opening, doping the third layer slows facet growth in the third layer and reduces stacking fault formation in the third layer, and the second semiconductor material comprises germanium and p-type dopants; - forming a fourth layer on top of the third layer, the fourth layer comprising a third semiconductor material; - forming a fifth layer on top of the fourth layer, the fifth layer comprising a fourth semiconductor material; - bonding the fifth layer to a handle wafer; and - removing the substrate,