A method for constructing a multilayer structure to be used for scanning probe microscope cantilever fabrication, the method comprising: providing a first substrate (502, 502', 602, 602') and a second substrate (510, 510', 610, 610') formed from a silicon bulk semiconductor material; providing a first separation layer (504, 504', 504b, 604, 605b, 614, 615) on the first substrate (502, 502', 602, 602') and a second separation layer (508, 508a, 508', 608) on the second substrate (510, 510', 610, 610'), wherein the first separation layer (504, 504b, 604, 605b, 614, 615) is differentially etchable with respect to the first substrate (502, 502', 602, 602'), and the second separation layer (508, 508a, 508', 608) is differentially etchable with respect to the second substrate (510, 510', 610, 610') by an etch rate ratio of at least 100 so that the second separation layer (508, 508a, 508', 608) acts as an etch stop during etching of the second substrate (510, 510', 610, 610'); providing an interior layer (506, 506a, 606,) formed from silicon or silicon nitride to be situated between the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608), wherein the interior layer (506, 506a, 606) is differentially etchable with respect to each of the first and the second separation layers (508, 508a, 508', 608); assembling the multilayer structure including situating the interior layer (506, 506a, 606) between the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608) such that the interior layer (506, 506a, 606) is separated from the first substrate (502, 502', 602, 602') and the second substrate (510, 510', 610, 610'), respectively, by the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608), wherein the interior layer (506, 506a, 606) becomes a cantilever having a proximal end, a distal end, a neck portion and a shoulder portion, the cantilever being formed from silicon or silicon nitride, wherein the shoulder portion is situated at the proximal end of the interior layer (506, 506a, 606) and protrudes in the distal direction beyond a periphery of the second substrate (510, 510', 610, 610'), and wherein the neck portion has a substantially smaller width dimension than the shoulder portion, the first substrate (502, 502', 602, 602') becomes a tip (406, 922) formed from the silicon bulk semiconductor material by etching and the second substrate (510, 510', 610, 610') becomes a handle formed from the silicon bulk semiconductor material by etching and situated at the proximal end, wherein the tip (406, 922) is situated entirely over a portion of the cantilever, and wherein the portion is entirely between the proximal end and the distal end. providing a first substrate (502, 502', 602, 602') and a second substrate (510, 510', 610, 610') formed from a silicon bulk semiconductor material; providing a first separation layer (504, 504', 504b, 604, 605b, 614, 615) on the first substrate (502, 502', 602, 602') and a second separation layer (508, 508a, 508', 608) on the second substrate (510, 510', 610, 610'), wherein the first separation layer (504, 504b, 604, 605b, 614, 615) is differentially etchable with respect to the first substrate (502, 502', 602, 602'), and the second separation layer (508, 508a, 508', 608) is differentially etchable with respect to the second substrate (510, 510', 610, 610') by an etch rate ratio of at least 100 so that the second separation layer (508, 508a, 508', 608) acts as an etch stop during etching of the second substrate (510, 510', 610, 610'); providing an interior layer (506, 506a, 606,) formed from silicon or silicon nitride to be situated between the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608), wherein the interior layer (506, 506a, 606) is differentially etchable with respect to each of the first and the second separation layers (508, 508a, 508', 608); assembling the multilayer structure including situating the interior layer (506, 506a, 606) between the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608) such that the interior layer (506, 506a, 606) is separated from the first substrate (502, 502', 602, 602') and the second substrate (510, 510', 610, 610'), respectively, by the first separation layer (504, 504', 504b, 604, 605b, 614, 615) and the second separation layer (508, 508a, 508', 608), wherein the interior layer (506, 506a, 606) becomes a cantilever having a proximal end, a distal end, a neck portion and a shoulder portion, the cantilever being formed from silicon or silicon nitride, wherein the shoulder portion is situated at the proximal end of the interior layer (506, 506a, 606) and protrudes in the distal direction beyond a periphery of the second substrate (510, 510', 610, 610'), and wherein the neck portion has a substantially smaller width dimension than the shoulder portion, the first substrate (502, 502', 602, 602') becomes a tip (406, 922) formed from the silicon bulk semiconductor material by etching and the second substrate (510, 510', 610, 610') becomes a handle formed from the silicon bulk semiconductor material by etching and situated at the proximal end, wherein the tip (406, 922) is situated entirely over a portion of the cantilever, and wherein the portion is entirely between the proximal end and the distal end.