A system (100, 300) for single magnetron sputtering comprising: a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate; a pulsed DC power supply (112, 312) coupled to the target and the anode, the pulsed power supply (112, 312) including a pulse controller (140, 340) adapted to supply both a first target sputtering energy to the target with a first voltage polarity and a second target sputtering energy to the target with the first voltage polarity, the pulse controller (140, 340) configured to supply a first anode sputtering energy immediately following the first target sputtering energy with a second voltage polarity, and configured to supply a second anode sputtering energy immediately following the second target sputtering energy with the second voltage polarity, wherein the second voltage polarity is opposite the first voltage polarity; an anode monitor system comprising a voltage monitor adapted to detect a first anode voltage at a first process variable value; a datastore comprising uncoated anode characterization data derived from characteristics of an uncoated anode that is not coated with a dielectric material, the uncoated anode characterization data including a first expected anode voltage stored in association with the first process variable value; and an anode sputtering adjustment system coupled to the datastore and the anode monitor system, the anode sputtering adjustment system including: an anode analysis component (122, 422) adapted to generate, based upon a difference between the first anode voltage and the first expected anode voltage, a first health value, the first health value indicative of whether the anode is coated with the dielectric material; and an anode power controller (124, 424) adapted to receive the first health value and provide an anode-energy-control signal to the pulse controller (140, 340) of the pulsed DC power supply (112, 312) adapted to adjust the second anode sputtering energy relative to the first anode sputtering energy to eject at least a portion of the dielectric material from the anode. a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate; a pulsed DC power supply (112, 312) coupled to the target and the anode, the pulsed power supply (112, 312) including a pulse controller (140, 340) adapted to supply both a first target sputtering energy to the target with a first voltage polarity and a second target sputtering energy to the target with the first voltage polarity, the pulse controller (140, 340) configured to supply a first anode sputtering energy immediately following the first target sputtering energy with a second voltage polarity, and configured to supply a second anode sputtering energy immediately following the second target sputtering energy with the second voltage polarity, wherein the second voltage polarity is opposite the first voltage polarity; an anode monitor system comprising a voltage monitor adapted to detect a first anode voltage at a first process variable value; a datastore comprising uncoated anode characterization data derived from characteristics of an uncoated anode that is not coated with a dielectric material, the uncoated anode characterization data including a first expected anode voltage stored in association with the first process variable value; and an anode sputtering adjustment system coupled to the datastore and the anode monitor system, the anode sputtering adjustment system including: an anode analysis component (122, 422) adapted to generate, based upon a difference between the first anode voltage and the first expected anode voltage, a first health value, the first health value indicative of whether the anode is coated with the dielectric material; and an anode power controller (124, 424) adapted to receive the first health value and provide an anode-energy-control signal to the pulse controller (140, 340) of the pulsed DC power supply (112, 312) adapted to adjust the second anode sputtering energy relative to the first anode sputtering energy to eject at least a portion of the dielectric material from the anode.