A method of packaging a semiconductor comprising: electrically coupling a contact on a first surface of each of a plurality of die to a respective first one of a plurality of leads (215, 220) of a lower lead frame by reflowing solder between the contact on the first surface of each of the plurality of die and the respective first one of the plurality of leads of the lower lead frame, wherein the plurality of leads (215, 220) of the lower lead frame are coupled together by one or more tie bars of the lower lead frame; forming an upper lead frame including a plurality of pairs of leads, each coupled by a set of second tie bars, wherein opposite edges of each pair of leads of the plurality of pairs of leads are each bent to form an L-shape, wherein the bent opposite edges of each pair of leads of the upper lead frame support the upper lead frame from the lower lead frame, wherein adjacent edges of each pair of leads of the upper lead frame are not bent, and wherein the adjacent edges of each pair of the leads of the upper lead frame are coupled together by one or more additional tie bars; and electrically coupling a respective L-shaped lead of the upper lead frame between respective contacts on a second surface of each respective die and a respective second one of the plurality of leads of the lower lead frame by reflowing solder between the L-shaped leads of the upper lead frame and respective contacts on the second surface of each respective die and respective second one of the plurality of leads of the lower lead frame, wherein a ratio of a thickness of the solder coupling the upper lead frame to the die and the thickness of the solder coupling the lower lead frame to the die is regulated to lift each respective die as a result of the surface tension of the solder to a desired position intermediate between the upper lead frame and the lower lead frame; encapsulating the plurality of die, at least a portion of the upper lead frame and a portion of the lower lead frame (215, 220, 210); and singulating the die into packaged semiconductors by cutting through the encapsulant, the tie bars coupling the leads (215, 220, 210) of the lower lead frame, and the tier bars coupling the leads of the upper lead frame to separate the plurality of die into packaged semiconductors wherein the upper lead is coupled to a lower lead on one side of the die and is not coupled to another lower lead on the other side of the die. electrically coupling a contact on a first surface of each of a plurality of die to a respective first one of a plurality of leads (215, 220) of a lower lead frame by reflowing solder between the contact on the first surface of each of the plurality of die and the respective first one of the plurality of leads of the lower lead frame, wherein the plurality of leads (215, 220) of the lower lead frame are coupled together by one or more tie bars of the lower lead frame; forming an upper lead frame including a plurality of pairs of leads, each coupled by a set of second tie bars, wherein opposite edges of each pair of leads of the plurality of pairs of leads are each bent to form an L-shape, wherein the bent opposite edges of each pair of leads of the upper lead frame support the upper lead frame from the lower lead frame, wherein adjacent edges of each pair of leads of the upper lead frame are not bent, and wherein the adjacent edges of each pair of the leads of the upper lead frame are coupled together by one or more additional tie bars; and electrically coupling a respective L-shaped lead of the upper lead frame between respective contacts on a second surface of each respective die and a respective second one of the plurality of leads of the lower lead frame by reflowing solder between the L-shaped leads of the upper lead frame and respective contacts on the second surface of each respective die and respective second one of the plurality of leads of the lower lead frame, wherein a ratio of a thickness of the solder coupling the upper lead frame to the die and the thickness of the solder coupling the lower lead frame to the die is regulated to lift each respective die as a result of the surface tension of the solder to a desired position intermediate between the upper lead frame and the lower lead frame; encapsulating the plurality of die, at least a portion of the upper lead frame and a portion of the lower lead frame (215, 220, 210); and singulating the die into packaged semiconductors by cutting through the encapsulant, the tie bars coupling the leads (215, 220, 210) of the lower lead frame, and the tier bars coupling the leads of the upper lead frame to separate the plurality of die into packaged semiconductors wherein the upper lead is coupled to a lower lead on one side of the die and is not coupled to another lower lead on the other side of the die.