Method for setting parameters of a method for treating a stack obtained upon manufacturing a heterojunction photovoltaic cell, the stack comprising a crystalline silicon substrate and a hydrogenated amorphous silicon passivation layer disposed on the substrate, the treatment method aiming to improve efficiency of the heterojunction photovoltaic cell and comprising a step of exposing a face of the stack to electromagnetic radiation, the electromagnetic radiation being emitted by a radiation source and applied to the face of the stack along a line, the stack and the radiation source being relatively translationally moving such that the line sweeps at least part of the face of the stack, the method for setting parameters comprising determining a plurality of parameters of the treatment method so that the heat-up temperature of the stack reached during the treatment method is less than or equal to a threshold temperature (T max), the plurality of parameters comprising an irradiance of the electromagnetic radiation, a width of the line and a speed of relative displacement between the stack and the radiation source and being determined using the following relationship: Vρc P ΔT C T L C 1 L = − k ΔT C T L C 2 L 2 + ∅ source E e + ∅ ext wherein: - V is the speed of relative displacement between the stack and the radiation source; - ΔT c is a function of heat-up temperature and represents a temperature variation characteristic of the heat-up in a direction perpendicular to the line; - L c1 is a function of width of the line and represents a first length characteristic of heat convection during the relative displacement between the stack and the radiation source; - L c2 is a function of width of the line and represents a second length characteristic of heat diffusion in a direction perpendicular to the line; - Ø source is a function of irradiance of the electromagnetic radiation and thickness (e) of the stack and represents the quantity of heat per unit volume supplied by the radiation source; - Ø ext represents the quantity of heat per unit volume exchanged with an external environment in which the stack is placed during the step of exposing to the electromagnetic radiation; - ρ, C p and k are respectively the density, specific heat capacity and thermal conductivity of the stack. - V is the speed of relative displacement between the stack and the radiation source; - ΔT c is a function of heat-up temperature and represents a temperature variation characteristic of the heat-up in a direction perpendicular to the line; - L c1 is a function of width of the line and represents a first length characteristic of heat convection during the relative displacement between the stack and the radiation source; - L c2 is a function of width of the line and represents a second length characteristic of heat diffusion in a direction perpendicular to the line; - Ø source is a function of irradiance of the electromagnetic radiation and thickness (e) of the stack and represents the quantity of heat per unit volume supplied by the radiation source; - Ø ext represents the quantity of heat per unit volume exchanged with an external environment in which the stack is placed during the step of exposing to the electromagnetic radiation; - ρ, C p and k are respectively the density, specific heat capacity and thermal conductivity of the stack.