A radiofrequency 'RF' power amplifier package, comprising: a package; a first semiconductor die arranged inside said package and provided with an RF power transistor, said RF power transistor having an output capacitance (Cds) and being configured to amplify signals at an operational frequency; an impedance network arranged inside the package and comprising: a first inductor having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit (L2, R, C1) being electrically connected to the second terminal of the first inductor; a second capacitor electrically connected in between the resonance unit and ground; wherein the resonance unit comprises a second inductor electrically connected in between the second capacitor and the first inductor, and a first capacitor having a first and second terminal, the first terminal of the first capacitor being electrically connected to the second terminal of the first inductor, and wherein the resonance circuit comprises a resistive element; wherein the capacitance of the second capacitor is larger than the capacitance of the first capacitor; wherein the second terminal of the first capacitor is electrically connected to the second capacitor; wherein the RF power transistor is configured to be fed using a feed inductance (Lfeed), and wherein the second capacitor is configured to resonate with the feed inductance at a first resonance frequency that is smaller than the operational frequency; characterized in that the first inductor, the first capacitor, and the second inductor are chosen such that at or close to the operational frequency: the second inductor blocks the RF current, causing the larger part thereof to flow through the first capacitor and second capacitor; the effective inductance formed by the series connection of the first capacitor and the first inductor has an effective inductance that is substantially equal to the inductance of the first inductor, said effective inductance resonating with the output capacitance; wherein the second inductor is configured to resonate with the first capacitor at a second resonance frequency, wherein the first resonance frequency is smaller than the second resonance frequency and wherein the second resonance frequency is smaller than the operational frequency; and wherein the resistive element is configured for damping the first and second resonances. a package; a first semiconductor die arranged inside said package and provided with an RF power transistor, said RF power transistor having an output capacitance (Cds) and being configured to amplify signals at an operational frequency; an impedance network arranged inside the package and comprising: a first inductor having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit (L2, R, C1) being electrically connected to the second terminal of the first inductor; a second capacitor electrically connected in between the resonance unit and ground; a first inductor having a first and second terminal, the first terminal being electrically connected to an output of the RF transistor; a resonance unit (L2, R, C1) being electrically connected to the second terminal of the first inductor; a second capacitor electrically connected in between the resonance unit and ground; wherein the resonance unit comprises a second inductor electrically connected in between the second capacitor and the first inductor, and a first capacitor having a first and second terminal, the first terminal of the first capacitor being electrically connected to the second terminal of the first inductor, and wherein the resonance circuit comprises a resistive element; wherein the capacitance of the second capacitor is larger than the capacitance of the first capacitor; wherein the second terminal of the first capacitor is electrically connected to the second capacitor; wherein the RF power transistor is configured to be fed using a feed inductance (Lfeed), and wherein the second capacitor is configured to resonate with the feed inductance at a first resonance frequency that is smaller than the operational frequency; characterized in that the first inductor, the first capacitor, and the second inductor are chosen such that at or close to the operational frequency: the second inductor blocks the RF current, causing the larger part thereof to flow through the first capacitor and second capacitor; the effective inductance formed by the series connection of the first capacitor and the first inductor has an effective inductance that is substantially equal to the inductance of the first inductor, said effective inductance resonating with the output capacitance; the second inductor blocks the RF current, causing the larger part thereof to flow through the first capacitor and second capacitor; the effective inductance formed by the series connection of the first capacitor and the first inductor has an effective inductance that is substantially equal to the inductance of the first inductor, said effective inductance resonating with the output capacitance; wherein the second inductor is configured to resonate with the first capacitor at a second resonance frequency, wherein the first resonance frequency is smaller than the second resonance frequency and wherein the second resonance frequency is smaller than the operational frequency; and wherein the resistive element is configured for damping the first and second resonances.