Organic electroluminescent device comprising - anode, - cathode, - at least one emitting layer which comprises a luminescent organic compound E which has a difference between the energies of its S 1 and T 1 states of not greater than 0.15 eV, and - 2, 3, 4 or 5 layers, each having a thickness of greater than 2 nm, arranged between the emitting layer EML closest to the anode and the anode, characterised in that the following condition applies to each layer having a thickness of greater than 2 nm which is arranged between the anode and the layer EML: the difference D between the HOMO energy level of the layer and the HOMO energy level of the closest layer on the cathode side having a thickness of greater than 2 nm must be less than or equal to 0.4 eV, with the proviso that, for layers whose HOMO energy level has a value of less than -6.7 eV, the LUMO energy level for the said condition takes the place of the HOMO energy level, where the HOMO and LUMO energy levels and the energies of the S 1 and T 1 states of compounds are to be determined by the method described in section 1) of the working examples (pp. 44-45), and where the HOMO energy level of a layer, if the layer consists of a single compound, is taken to mean the HOMO energy level of this compound, and where the HOMO energy level of a layer, if the layer consists of two or more different compounds, is taken to mean the HOMO energy level of the one of the two or more different compounds that has the highest HOMO energy level, and where the LUMO energy level of a layer, if the layer consists of a single compound, is taken to mean the LUMO energy level of this compound, and where the LUMO energy level of a layer, if the layer consists of two or more different compounds, is taken to mean the LUMO energy level of the one of the two or more different compounds that has the lowest LUMO energy level. - anode, - cathode, - at least one emitting layer which comprises a luminescent organic compound E which has a difference between the energies of its S 1 and T 1 states of not greater than 0.15 eV, and - 2, 3, 4 or 5 layers, each having a thickness of greater than 2 nm, arranged between the emitting layer EML closest to the anode and the anode, the difference D between the HOMO energy level of the layer and the HOMO energy level of the closest layer on the cathode side having a thickness of greater than 2 nm must be less than or equal to 0.4 eV, with the proviso that, for layers whose HOMO energy level has a value of less than -6.7 eV, the LUMO energy level for the said condition takes the place of the HOMO energy level, where the HOMO and LUMO energy levels and the energies of the S 1 and T 1 states of compounds are to be determined by the method described in section 1) of the working examples (pp. 44-45), and where the HOMO energy level of a layer, if the layer consists of a single compound, is taken to mean the HOMO energy level of this compound, and where the HOMO energy level of a layer, if the layer consists of two or more different compounds, is taken to mean the HOMO energy level of the one of the two or more different compounds that has the highest HOMO energy level, and where the LUMO energy level of a layer, if the layer consists of a single compound, is taken to mean the LUMO energy level of this compound, and where the LUMO energy level of a layer, if the layer consists of two or more different compounds, is taken to mean the LUMO energy level of the one of the two or more different compounds that has the lowest LUMO energy level.