A method for forming, selectively, an electrical contact to a semiconductor structure, the method comprising: - providing a patterned substrate (500, 501) for forming a FinFET device comprising, on a main surface: ∘ a dielectric region comprising a dielectric material in contact with a semiconductor substrate, and; ∘ a semiconductor region comprising a plurality of fin structures, protruding from the dielectric material, - depositing, directly on the patterned substrate (500, 501), a conformal layer of a first dielectric material thereby covering the semiconductor region and the dielectric region, - depositing a layer of a sacrificial material on the conformal layer of the first dielectric material, - patterning the sacrificial material whereby at least a part of the semiconductor region remains covered by the patterned sacrificial material, - depositing a layer of a second dielectric material on the patterned substrate, thereby completely covering the patterned sacrificial material, - removing an excess portion of the second dielectric material by performing a surface flattening process, thereby exposing a top surface of the patterned sacrificial material, - forming a recess in the second dielectric material by completely removing the patterned sacrificial material selectively to the conformal layer, thereby exposing, at its bottom, the conformal layer of the first dielectric material, and; - removing the exposed conformal layer of the first dielectric material selectively to the semiconductor region, thereby, at least exposing the part of the semiconductor region, - applying selectively a self-assembled monolayer on the second dielectric material and on an exposed part of the dielectric region of the semiconductor structure, whereby, the exposed part of the semiconductor region remains uncovered, - forming, selectively, the electrical contact on the exposed part of the semiconductor region, at the bottom of the recess, and; - selectively removing the self-assembled monolayer. - providing a patterned substrate (500, 501) for forming a FinFET device comprising, on a main surface: ∘ a dielectric region comprising a dielectric material in contact with a semiconductor substrate, and; ∘ a semiconductor region comprising a plurality of fin structures, protruding from the dielectric material, ∘ a dielectric region comprising a dielectric material in contact with a semiconductor substrate, and; ∘ a semiconductor region comprising a plurality of fin structures, protruding from the dielectric material, - depositing, directly on the patterned substrate (500, 501), a conformal layer of a first dielectric material thereby covering the semiconductor region and the dielectric region, - depositing a layer of a sacrificial material on the conformal layer of the first dielectric material, - patterning the sacrificial material whereby at least a part of the semiconductor region remains covered by the patterned sacrificial material, - depositing a layer of a second dielectric material on the patterned substrate, thereby completely covering the patterned sacrificial material, - removing an excess portion of the second dielectric material by performing a surface flattening process, thereby exposing a top surface of the patterned sacrificial material, - forming a recess in the second dielectric material by completely removing the patterned sacrificial material selectively to the conformal layer, thereby exposing, at its bottom, the conformal layer of the first dielectric material, and; - removing the exposed conformal layer of the first dielectric material selectively to the semiconductor region, thereby, at least exposing the part of the semiconductor region, - applying selectively a self-assembled monolayer on the second dielectric material and on an exposed part of the dielectric region of the semiconductor structure, whereby, the exposed part of the semiconductor region remains uncovered, - forming, selectively, the electrical contact on the exposed part of the semiconductor region, at the bottom of the recess, and; - selectively removing the self-assembled monolayer.