A method for manufacturing a semiconductor light-emitting device, comprising the following sequence of steps: a semiconductor film formation step for forming a semiconductor film made from a group III nitride semiconductor, including a light-emitting layer, on a top surface of a growth substrate; a reflection electrode formation step for forming a reflection electrode on a surface of said semiconductor film on the opposite side from said top surface of said growth substrate; a division groove formation step for forming a division groove reaching said top surface of said growth substrate from said surface of said semiconductor film and dividing said semiconductor film into a plurality of pieces each having a tapered edge surface as a side surface that is inclined relative to said top surface of said growth substrate; a support substrate bonding step for bonding a support substrate to said reflection electrode interposed by a bonding layer; a growth substrate removal step for removing said growth substrate and exposing a crystal surface of said semiconductor film; an offset surface revealing step for revealing, in a first region at an edge section of said crystal surface of said semiconductor film exposed by the removal of said growth substrate, an offset surface, which is offset relative to said crystal surface exposed in a second region further inwards from said first region; and a relief structure formation step for simultaneously performing a wet etching treatment on said offset surface in said first region of the surface of said semiconductor film revealed after the offset surface revealing step and said crystal surface in said second region of the surface of said semiconductor film exposed after the growth substrate removal step, and forming, in said first region and second region of the surface of said semiconductor film, a relief structure comprising a plurality of protrusions (200a, 200b) having a shape originating from the structure of crystals in said crystal surface and said offset surface of said semiconductor film such that the average size of the plurality of protrusions in said first region is smaller than the average size of the plurality of protrusions in said second region, said relief structure forming a light extraction surface of said semiconductor film. a semiconductor film formation step for forming a semiconductor film made from a group III nitride semiconductor, including a light-emitting layer, on a top surface of a growth substrate; a reflection electrode formation step for forming a reflection electrode on a surface of said semiconductor film on the opposite side from said top surface of said growth substrate; a division groove formation step for forming a division groove reaching said top surface of said growth substrate from said surface of said semiconductor film and dividing said semiconductor film into a plurality of pieces each having a tapered edge surface as a side surface that is inclined relative to said top surface of said growth substrate; a support substrate bonding step for bonding a support substrate to said reflection electrode interposed by a bonding layer; a growth substrate removal step for removing said growth substrate and exposing a crystal surface of said semiconductor film; an offset surface revealing step for revealing, in a first region at an edge section of said crystal surface of said semiconductor film exposed by the removal of said growth substrate, an offset surface, which is offset relative to said crystal surface exposed in a second region further inwards from said first region; and a relief structure formation step for simultaneously performing a wet etching treatment on said offset surface in said first region of the surface of said semiconductor film revealed after the offset surface revealing step and said crystal surface in said second region of the surface of said semiconductor film exposed after the growth substrate removal step, and forming, in said first region and second region of the surface of said semiconductor film, a relief structure comprising a plurality of protrusions (200a, 200b) having a shape originating from the structure of crystals in said crystal surface and said offset surface of said semiconductor film such that the average size of the plurality of protrusions in said first region is smaller than the average size of the plurality of protrusions in said second region, said relief structure forming a light extraction surface of said semiconductor film.