A semiconductor structure, comprising: a substrate having: a semiconductor layer disposed in a first portion of a top surface of the substrate and a ground plane conductor on a bottom surface of the substrate; a matching network requiring a predetermined shunt capacitance in a transformation of the impedance at an output to a transistor to a load, comprising: an input transmission line disposed over the substrate for coupling to: the output of the transistor formed in the semiconductor layer; and a bias terminal for connection to a direct current bias voltage source; an output transmission line disposed over the substrate having an output adapted for coupling to the load; a first conductive layer disposed over a second portion of the top surface of the substrate connected to a strip conductor of the output transmission line; a dielectric layer disposed on the first conductive layer, the dielectric layer being separated from the substrate by the first conductive layer; a second conductive layer disposed on the dielectric layer and connected to a strip conductor of the input transmission line; wherein the first conductive layer, the dielectric layer and the second conductive layer form a first capacitor; wherein the first conductive layer, an underlying portion of the substrate, and an underlying portion of the ground plane conductor form a second capacitor; wherein the second capacitor is arranged to provide the predetermined shunt capacitance required in the transformation of the impedance at the output to the transistor to the load; and wherein the first capacitor is arranged to block direct current from the direct current bias voltage source to the output transmission line. a substrate having: a semiconductor layer disposed in a first portion of a top surface of the substrate and a ground plane conductor on a bottom surface of the substrate; a matching network requiring a predetermined shunt capacitance in a transformation of the impedance at an output to a transistor to a load, comprising: an input transmission line disposed over the substrate for coupling to: the output of the transistor formed in the semiconductor layer; and a bias terminal for connection to a direct current bias voltage source; an output transmission line disposed over the substrate having an output adapted for coupling to the load; a first conductive layer disposed over a second portion of the top surface of the substrate connected to a strip conductor of the output transmission line; a dielectric layer disposed on the first conductive layer, the dielectric layer being separated from the substrate by the first conductive layer; a second conductive layer disposed on the dielectric layer and connected to a strip conductor of the input transmission line; wherein the first conductive layer, the dielectric layer and the second conductive layer form a first capacitor; wherein the first conductive layer, an underlying portion of the substrate, and an underlying portion of the ground plane conductor form a second capacitor; wherein the second capacitor is arranged to provide the predetermined shunt capacitance required in the transformation of the impedance at the output to the transistor to the load; and wherein the first capacitor is arranged to block direct current from the direct current bias voltage source to the output transmission line. an input transmission line disposed over the substrate for coupling to: the output of the transistor formed in the semiconductor layer; and a bias terminal for connection to a direct current bias voltage source; an output transmission line disposed over the substrate having an output adapted for coupling to the load; a first conductive layer disposed over a second portion of the top surface of the substrate connected to a strip conductor of the output transmission line; a dielectric layer disposed on the first conductive layer, the dielectric layer being separated from the substrate by the first conductive layer; a second conductive layer disposed on the dielectric layer and connected to a strip conductor of the input transmission line; wherein the first conductive layer, the dielectric layer and the second conductive layer form a first capacitor; wherein the first conductive layer, an underlying portion of the substrate, and an underlying portion of the ground plane conductor form a second capacitor; wherein the second capacitor is arranged to provide the predetermined shunt capacitance required in the transformation of the impedance at the output to the transistor to the load; and wherein the first capacitor is arranged to block direct current from the direct current bias voltage source to the output transmission line.