An open through-substrate via, TSV, the through-substrate via comprising - a substantially planar substrate body including a semiconducting portion and an interlayer dielectric portion disposed in contact with the semiconducting portion, the semiconducting portion having a surface facing away from the interlayer dielectric portion; - a trench extending from the surface at least through the semiconducting portion, the trench having side walls and a bottom wall; - an insulation layer disposed onto at least a portion of the side walls and the surface; - a metallization layer disposed onto at least a portion of the insulation layer that is disposed in contact with the side walls and onto at least a portion of the bottom wall; - a redistribution layer disposed onto at least a portion of the metallization layer and onto a portion of the insulation layer that is disposed in contact with the surface; and - a capping layer disposed onto at least a portion of the metallization layer and onto at least a portion of the redistribution layer; wherein - the insulation layer and/or the capping layer comprise a first sublayer (21, 51) and a second sublayer (22, 52), wherein the first sublayer (21, 51) is arranged between the surface and the second sublayer (22, 52); - the first sublayer (21, 51) extends into the trench; - the second sublayer (22, 52) is disposed in contact with the first sublayer (21, 51) without extending into the trench; - the first sublayer (21, 51) has a tensile type or a compressive type of intrinsic stress; and - the second sublayer (22, 52) has an intrinsic stress of the respective other type or of the same type but different magnitude than that of the first sublayer (21, 51). - a substantially planar substrate body including a semiconducting portion and an interlayer dielectric portion disposed in contact with the semiconducting portion, the semiconducting portion having a surface facing away from the interlayer dielectric portion; - a trench extending from the surface at least through the semiconducting portion, the trench having side walls and a bottom wall; - an insulation layer disposed onto at least a portion of the side walls and the surface; - a metallization layer disposed onto at least a portion of the insulation layer that is disposed in contact with the side walls and onto at least a portion of the bottom wall; - a redistribution layer disposed onto at least a portion of the metallization layer and onto a portion of the insulation layer that is disposed in contact with the surface; and - a capping layer disposed onto at least a portion of the metallization layer and onto at least a portion of the redistribution layer; wherein - the insulation layer and/or the capping layer comprise a first sublayer (21, 51) and a second sublayer (22, 52), wherein the first sublayer (21, 51) is arranged between the surface and the second sublayer (22, 52); - the first sublayer (21, 51) extends into the trench; - the second sublayer (22, 52) is disposed in contact with the first sublayer (21, 51) without extending into the trench; - the first sublayer (21, 51) has a tensile type or a compressive type of intrinsic stress; and - the second sublayer (22, 52) has an intrinsic stress of the respective other type or of the same type but different magnitude than that of the first sublayer (21, 51).