A method of forming patterned features (114,124,134) on a substrate comprising positioning a plurality of masks arranged in a mask layout over a substrate wherein the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas (112,122,132) configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of areas (112,122,132) configured to be patterned are spaced apart from each other by one or more areas not configured to be patterned by the energy directed through the masks, and each area of the plurality of areas (112,122,132) configured to be patterned is spaced apart from a closest area of the plurality of areas (112,122,132) configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from directions in the first plane that extend parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature on the substrate; and directing energy towards the plurality of areas (112,122,132) through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features (114,124,134) in each of the plurality of areas (112,122,132), wherein a number of the formed plurality of patterned features (114,124,134) extending along directions in the first plane that are within ±2.5 degrees of being parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature are greater than a number of the formed plurality of patterned features (114,124,134) extending along directions in the first plane that do not align within ±2.5 degrees of being parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature. positioning a plurality of masks arranged in a mask layout over a substrate wherein the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas (112,122,132) configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of areas (112,122,132) configured to be patterned are spaced apart from each other by one or more areas not configured to be patterned by the energy directed through the masks, and each area of the plurality of areas (112,122,132) configured to be patterned is spaced apart from a closest area of the plurality of areas (112,122,132) configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from directions in the first plane that extend parallel, perpendicular, ±30 degrees, ±45 degrees, the substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas (112,122,132) configured to be patterned by energy directed through the masks arranged in the mask layout, the plurality of areas (112,122,132) configured to be patterned are spaced apart from each other by one or more areas not configured to be patterned by the energy directed through the masks, and each area of the plurality of areas (112,122,132) configured to be patterned is spaced apart from a closest area of the plurality of areas (112,122,132) configured to be patterned by a shortest distance along a direction offset by at least 5 degrees from directions in the first plane that extend parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature on the substrate; and directing energy towards the plurality of areas (112,122,132) through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features (114,124,134) in each of the plurality of areas (112,122,132), wherein a number of the formed plurality of patterned features (114,124,134) extending along directions in the first plane that are within ±2.5 degrees of being parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature are greater than a number of the formed plurality of patterned features (114,124,134) extending along directions in the first plane that do not align within ±2.5 degrees of being parallel, perpendicular, ±30 degrees, ±45 degrees, or ±60 degrees relative to the alignment feature.