mhurhangee/ep-ind-claims huggingface dataset:
A hydraulic amplifier system supplying solvent to a chromatographic system, the hydraulic amplifier system comprising: a hydraulic cylinder which supplies pressurized solvent to said chromatographic system; and a pump which supplies pressurized hydraulic fluid to actuate said hydraulic cylinder, wherein said hydraulic cylinder comprises: an inlet chamber; an outlet chamber; a primary piston disposed in said inlet chamber, said primary piston being driven by said pressurized hydraulic fluid; a secondary piston disposed in a secondary piston chamber, characterized in that said secondary piston being coupled to said primary piston by means of a piston coupler, said secondary piston being activated by said primary piston; wherein a cross-sectional area of said primary piston is larger than a cross-sectional area of said secondary piston, such that a pressure in said secondary piston chamber is greater than a pressure in said inlet chamber, and a flow rate through said secondary piston chamber is less than a flow rate through said outlet chamber. a hydraulic cylinder which supplies pressurized solvent to said chromatographic system; and a pump which supplies pressurized hydraulic fluid to actuate said hydraulic cylinder, wherein said hydraulic cylinder comprises: an inlet chamber; an outlet chamber; a primary piston disposed in said inlet chamber, said primary piston being driven by said pressurized hydraulic fluid; a secondary piston disposed in a secondary piston chamber, characterized in that said secondary piston being coupled to said primary piston by means of a piston coupler, said secondary piston being activated by said primary piston; wherein a cross-sectional area of said primary piston is larger than a cross-sectional area of said secondary piston, such that a pressure in said secondary piston chamber is greater than a pressure in said inlet chamber, and a flow rate through said secondary piston chamber is less than a flow rate through said outlet chamber. an inlet chamber; an outlet chamber; a primary piston disposed in said inlet chamber, said primary piston being driven by said pressurized hydraulic fluid; a secondary piston disposed in a secondary piston chamber, characterized in that said secondary piston being coupled to said primary piston by means of a piston coupler, said secondary piston being activated by said primary piston; wherein a cross-sectional area of said primary piston is larger than a cross-sectional area of said secondary piston, such that a pressure in said secondary piston chamber is greater than a pressure in said inlet chamber, and a flow rate through said secondary piston chamber is less than a flow rate through said outlet chamber.
A process for making regular shaped particles of solid foam being selected from the group consisting of silica foam, aluminosilicate foam and doped silica foam and having a pore size of greater than 10nm, said process comprising: - preparing a first mixture comprising water, an acid, a surfactant and a hydrophobic material; - combining a hydrolysable silicon species with the first mixture to form a second mixture; - maintaining the second mixture without agitation for a sufficient time to form regular shaped precursor particles; and - aging the second mixture at a temperature of 50 to 150°C for a time effective to produce the regular shaped particles of solid foam. - preparing a first mixture comprising water, an acid, a surfactant and a hydrophobic material; - combining a hydrolysable silicon species with the first mixture to form a second mixture; - maintaining the second mixture without agitation for a sufficient time to form regular shaped precursor particles; and - aging the second mixture at a temperature of 50 to 150°C for a time effective to produce the regular shaped particles of solid foam.
Compositions A1 comprising or consisting of one or more polyaspartic esters of the general formula in which X is an m-valent organic radical that can be obtained by removing the primary amino groups from cyclic ethers, said ethers being monocycles or fused bicycles based on monocyclic ethers and which on at least 2 of the ring carbon atoms bear a group selected from primary amino group and aliphatically attached primary amino group, where R1 and R2 are identical or different organic radicals each having 1 to 18 carbon atoms and m is an integer > 1, and optionally one or more polyaspartic esters having a primary amino group of the general formula in which n is m-1 and X and the radicals R1 and R2 are as defined above. X is an m-valent organic radical that can be obtained by removing the primary amino groups from cyclic ethers, said ethers being monocycles or fused bicycles based on monocyclic ethers and which on at least 2 of the ring carbon atoms bear a group selected from primary amino group and aliphatically attached primary amino group, where R1 and R2 are identical or different organic radicals each having 1 to 18 carbon atoms and m is an integer > 1, n is m-1 and X and the radicals R1 and R2 are as defined above.
A method of securing application secrets, the method comprising: managing an operating system execution environment comprising a first user mode and a first kernel mode; executing a single operating system in the first kernel mode, the executing the single operating system comprising providing one or more operating system services of the single operating system to one or more processes of the first kernel mode; managing a secure execution environment comprising a second user mode and a second kernel mode; executing an isolated process within the second user mode of the secure execution environment; providing the one or more operating system services of the single operating system executing in the first kernel mode to the isolated process via the second kernel mode; and protecting the isolated process from an attack from the one or more operating system services by disabling access by the first user mode and the first kernel mode to one or more pages of memory. managing an operating system execution environment comprising a first user mode and a first kernel mode; executing a single operating system in the first kernel mode, the executing the single operating system comprising providing one or more operating system services of the single operating system to one or more processes of the first kernel mode; managing a secure execution environment comprising a second user mode and a second kernel mode; executing an isolated process within the second user mode of the secure execution environment; providing the one or more operating system services of the single operating system executing in the first kernel mode to the isolated process via the second kernel mode; and protecting the isolated process from an attack from the one or more operating system services by disabling access by the first user mode and the first kernel mode to one or more pages of memory.
A method for calibrating a wafer transport robot for loading a wafer boat with wafers, wherein the wafer boat comprises a plurality of plates generally arranged parallel to each other in an opposed manner, and wherein the wafer boat comprises a plurality of receptacles for receiving the wafers between adjacent plates, and wherein the wafer transport robot comprises a wafer gripper which is adapted to insert a wafer into the receptacles between the plates and to remove a wafer therefrom, the method being characterized by the following steps: a.) moving the wafer gripper to a first position approximately corresponding to a theoretical loading position of the wafer boat; b.) automatically determining the spacial position of the wafer gripper by moving at least three sensors (45, 46, 47) along predetermined movement paths across the wafer gripper wherein each of the sensors (45, 46, 47) is directed to an edge region (39, 40,41) of the wafer gripper or to an edge region (77, 78, 79) of a plate element, which is supported by the wafer gripper in known manner, during the movement, determining the position of the sensors (45, 46, 47) along the corresponding movement paths and detecting the positions in which a corresponding edge region (39, 40,41; 77, 78; 79) enters into and exits from a measuring range of one of the sensors (45, 46, 47), measuring the distance between each sensor (45, 46, 47) and the corresponding edge region (39, 40,41; 77, 78, 79); c.) determining at least one compensation parameter for positioning the wafer gripper based on a difference between the determined spatial position of the wafer gripper and the theoretical loading position; and d.) optionally repeating steps a.) to c.) for further theoretical loading positions. a.) moving the wafer gripper to a first position approximately corresponding to a theoretical loading position of the wafer boat; b.) automatically determining the spacial position of the wafer gripper by moving at least three sensors (45, 46, 47) along predetermined movement paths across the wafer gripper wherein each of the sensors (45, 46, 47) is directed to an edge region (39, 40,41) of the wafer gripper or to an edge region (77, 78, 79) of a plate element, which is supported by the wafer gripper in known manner, during the movement, determining the position of the sensors (45, 46, 47) along the corresponding movement paths and detecting the positions in which a corresponding edge region (39, 40,41; 77, 78; 79) enters into and exits from a measuring range of one of the sensors (45, 46, 47), measuring the distance between each sensor (45, 46, 47) and the corresponding edge region (39, 40,41; 77, 78, 79); c.) determining at least one compensation parameter for positioning the wafer gripper based on a difference between the determined spatial position of the wafer gripper and the theoretical loading position; and d.) optionally repeating steps a.) to c.) for further theoretical loading positions.
A process for manufacturing a semiconductor substrate made of GaN comprising the steps of: forming a metal film on a basal substrate having a first semiconductor layer of GaN formed on a base material or a basal substrate comprising a first semiconductor layer of GaN, an upper surface of said first semiconductor layer being covered with said metal film, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of GaN, fine holes being formed in the metal film as a result of the heat treatment for forming voids, wherein the fine holes are holes of submicron order, and said metal film contains scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, palladium, manganese, copper, platinum or gold, forming a second semiconductor layer of GaN on said metal film, wherein the process further comprises a step selected from the following steps: a step of etching off said metal film to peel off said basal substrate, after forming the second semiconductor layer of GaN, and a step of peeling off said basal substrate mechanically at the void-containing layer, after forming the second semiconductor layer of GaN. forming a metal film on a basal substrate having a first semiconductor layer of GaN formed on a base material or a basal substrate comprising a first semiconductor layer of GaN, an upper surface of said first semiconductor layer being covered with said metal film, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of GaN, fine holes being formed in the metal film as a result of the heat treatment for forming voids, wherein the fine holes are holes of submicron order, and said metal film contains scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, palladium, manganese, copper, platinum or gold, said metal film contains scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, palladium, manganese, copper, platinum or gold, forming a second semiconductor layer of GaN on said metal film, wherein the process further comprises a step selected from the following steps: a step of etching off said metal film to peel off said basal substrate, after forming the second semiconductor layer of GaN, and a step of peeling off said basal substrate mechanically at the void-containing layer, after forming the second semiconductor layer of GaN. a step of etching off said metal film to peel off said basal substrate, after forming the second semiconductor layer of GaN, and a step of peeling off said basal substrate mechanically at the void-containing layer, after forming the second semiconductor layer of GaN.
An oven comprising a casing, an oven cavity enclosed in the casing, wherein the foods to be cooked are placed and a heater that provides heating of the oven cavity, characterized by an insulation layer having foamy structure, that is obtained by mixing enamel with the blowing agent, and which adheres on the casing by being applied on the casing wherein the insulation layer is fixed by being heated and solidifies on the casing after being coated on the casing and wherein the insulation layer that is applied on the surface of the casing facing the oven cavity HAS enamel without the blowing agent mixed therein applied thereon.
Wind power plant, comprising a wind rotor which can be operated at a variable rotation speed, a generator which can be operated at a constant rotation speed, and an electrical machine which can be operated at a variable rotation speed, which wind rotor, generator and electrical machine are drive-connected to one another by means of a variable-ratio gear mechanism, wherein the electrical machine as a force-adjusting device for regulating the rotation speed of the generator can be operated both as a generator and as a motor and is connected to a power supply system by means of a frequency converter, wherein a controllable locking brake for locking the generator as required is arranged in the force flow between the variable-ratio gear mechanism and the generator, characterized in that the locking brake is designed such that it is active in an interlocking manner.
A voice recognition method for an electronic apparatus, comprising: receiving an input voice signal of a user representing a spoken command; receiving an image of the user; and determining at least one characteristic of the user based on said input voice signal and the received image of the user; characterized in that the determining the at least one characteristic of the user comprises determining at least one of a sex and an age of the user, and in that the voice recognition method further comprises recognizing the spoken command represented by the input voice signal based on the determined at least one characteristic of the user. receiving an input voice signal of a user representing a spoken command; receiving an image of the user; and determining at least one characteristic of the user based on said input voice signal and the received image of the user; characterized in that the determining the at least one characteristic of the user comprises determining at least one of a sex and an age of the user, and in that the voice recognition method further comprises recognizing the spoken command represented by the input voice signal based on the determined at least one characteristic of the user.
A biodegradable drug delivery composition comprising: (a) a biodegradable triblock copolymer having the formula: A v -B w -A x wherein A is polylactic acid and B is polyethylene glycol and v, w and x are the number of repeat units ranging from 4 to 1090 or 6 to 1090 and v=x or v≠x; (b) a biodegradable diblock copolymer having the formula: C y -A z wherein A is polylactic acid and C is an end-capped polyethylene glycol and y and z are the number of repeat units ranging from 3 to 237 or 7 to 371, wherein the ratio of the biodegradable triblock copolymer of (a) and the biodegradable CA diblock copolymer of (b) is 1: 3 to 1:8 or 1:1 to 1:19 or 3:2 to 1:19 in said biodegradable drug composition; (c) at least one pharmaceutically active principle; and (d) an organic solvent. (a) a biodegradable triblock copolymer having the formula: A v -B w -A x wherein A is polylactic acid and B is polyethylene glycol and v, w and x are the number of repeat units ranging from 4 to 1090 or 6 to 1090 and v=x or v≠x; (b) a biodegradable diblock copolymer having the formula: C y -A z wherein A is polylactic acid and C is an end-capped polyethylene glycol and y and z are the number of repeat units ranging from 3 to 237 or 7 to 371, wherein the ratio of the biodegradable triblock copolymer of (a) and the biodegradable CA diblock copolymer of (b) is 1: 3 to 1:8 or 1:1 to 1:19 or 3:2 to 1:19 in said biodegradable drug composition; (c) at least one pharmaceutically active principle; and (d) an organic solvent.
A recombinant polypeptide having at least 95% sequence identity to an amino acid sequence comprising a first segment comprising amino acid residues from 1 to x 1 of SEQ ID NO:2 ("1b"), and a second segment comprising amino acid residues x 1' to x 2' of SEQ ID NO:5 ("2a"): wherein: x 1 is residue 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, or 35 of SEQ ID NO:2; x 1' is residue 22, 23, 24, 25, 26, 27, 28, 29, 30, 31 or 32 of SEQ ID NO:5; and x 2' is residue 42, 43, 44, or 45 of SEQ ID NO:5. x 1 is residue 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, or 35 of SEQ ID NO:2; x 1' is residue 22, 23, 24, 25, 26, 27, 28, 29, 30, 31 or 32 of SEQ ID NO:5; and x 2' is residue 42, 43, 44, or 45 of SEQ ID NO:5.
A humidification and air cleaning apparatus comprising: a water tank to store water; a visual body coupled to the water tank and disposed above the water tank; an air wash inlet formed between the water tank and the visual body to communicate with the inside of the visual body and the outside of the water tank; a water tank humidification medium formed of a material to absorb water, wherein the water tank humidification medium covers the air wash inlet to humidify air passing through the air wash inlet and is spaced apart from the water stored in the water tank; a watering unit disposed inside the water tank and spraying the water stored in the water tank to wet the water tank humidification medium, characterized in that the apparatus comprises a water tank humidification medium housing detachably mounted to the visual body and wherein the water tank humidification medium is disposed in the water tank humidification medium housing. a water tank to store water; a visual body coupled to the water tank and disposed above the water tank; an air wash inlet formed between the water tank and the visual body to communicate with the inside of the visual body and the outside of the water tank; a water tank humidification medium formed of a material to absorb water, wherein the water tank humidification medium covers the air wash inlet to humidify air passing through the air wash inlet and is spaced apart from the water stored in the water tank; a watering unit disposed inside the water tank and spraying the water stored in the water tank to wet the water tank humidification medium, characterized in that the apparatus comprises a water tank humidification medium housing detachably mounted to the visual body and wherein the water tank humidification medium is disposed in the water tank humidification medium housing.
Filter with expanded clay balls designed to equip a kitchen venting hood comprising a frame, an upper grid, a lower grid and expanded day balls holded in the frame between the lower and upper grids (3, 4), characterized in that the expanded clay beads initially have an acidic pH, said pH being neutralized in contact with a basic pH product.
A disposable board container comprising a bottom and a mantle extending upwards therefrom, said bottom and mantle being made from a polymer coated fibrous board and joined by heat-sealing, there being a coating of polymer (9, 10) at least on the inner surfaces of the container, characterized in that said board comprises: (i) a fibrous board base, (ii) an extruded inner coating layer of a blend of polyethylene and polypropylene, and (iii) an extruded outer coating layer of propylene-olefin copolymer (PP-c). (i) a fibrous board base, (ii) an extruded inner coating layer of a blend of polyethylene and polypropylene, and (iii) an extruded outer coating layer of propylene-olefin copolymer (PP-c).
A DC voltage function calibration device comprising: a first meter calibrator configured to be calibrated to a reference value for a reference point and having a first plus terminal and a first minus terminal; a second meter calibrator configured to be calibrated to the reference value for the reference point and having a second plus terminal and a second minus terminal connected to the first minus terminal; a digital multi meter having a third plus terminal connected to the first plus terminal and a third minus terminal connected to the second plus terminal; and a DC voltage calibration circuit configured to control the calibration of a DC voltage for other points through up-converting or down-converting a voltage value based on the reference value set in the first meter calibrator and the second meter calibrator, wherein the DC voltage calibration circuit is configured to calibrate an extension point of the digital multi meter using the combined voltage of the first meter calibrator and the second meter calibrator as a reference of the extension point. a first meter calibrator configured to be calibrated to a reference value for a reference point and having a first plus terminal and a first minus terminal; a second meter calibrator configured to be calibrated to the reference value for the reference point and having a second plus terminal and a second minus terminal connected to the first minus terminal; a digital multi meter having a third plus terminal connected to the first plus terminal and a third minus terminal connected to the second plus terminal; and a DC voltage calibration circuit configured to control the calibration of a DC voltage for other points through up-converting or down-converting a voltage value based on the reference value set in the first meter calibrator and the second meter calibrator, wherein the DC voltage calibration circuit is configured to calibrate an extension point of the digital multi meter using the combined voltage of the first meter calibrator and the second meter calibrator as a reference of the extension point.
An organolithium compound represented by Formula 1: wherein R 1 and R 2, which are the same or different, each independently represent a C 1 -C 6 alkyl group, and n is an integer in the range of 1 to 14.
An apparatus comprising: a storage device controller, coupled to a host bus adapter and a SATA controller over a SATA interface, the storage device controller comprising a collision detector and counter component to detect and count collisions on the SATA interface for a period of time; and a bus limiter component configured to detect a type of workload on the SATA interface, and when the detected workload is only read commands and a number of detected collisions is less than a detected collision threshold during the period of time, configured to set a limit on a maximum number of commands received by the storage device controller over the SATA interface. a collision detector and counter component to detect and count collisions on the SATA interface for a period of time; and a bus limiter component configured to detect a type of workload on the SATA interface, and when the detected workload is only read commands and a number of detected collisions is less than a detected collision threshold during the period of time, configured to set a limit on a maximum number of commands received by the storage device controller over the SATA interface.