An electromechanical transducer, called here sliding nanoactuator or SNA, comprising key elements wherein each of said key element consists of • a number of first electrical semiconductive filaments connected to a first electrical semiconductive disk; • a number of second electrical semiconductive filaments connected to a second electrical semiconductive disk; • wherein the first semiconductive filaments extend toward the second electrical semiconductive disk and the second semiconductive filaments extend toward the first electrical semiconductive disk, the two semiconductive disks defining the opposite ends of the SNA; • wherein there is a symmetrical distribution of at least three particles around the first and second semiconductive filaments (A1 and A2), said particles being linked to third filaments, which are embedded in a bundle of filaments forming stronger filament, extending between the first and second semiconductive filaments (A1 and A2); • wherein the surface of the particles, disks and filaments has the same electrical charge, the position of the particles and filaments in the relaxation state being controlled by electrostatic repulsion forces; • wherein, in the contraction state, the first and second semiconductive filaments (A1 and A2) are surrounded by the layer of ions with an opposite charge to the charge on the surface on the whole part of the SNA, causing local neutralization of the electrostatic repulsion; • wherein constant influence of van der Waal's attractive forces in the area of the first and second semiconductive filaments (A1 and A2) causes mutual attraction of the particles and their contact with the said first and second semiconductive filaments (A1 and A2) and the continuing attraction of the partcles result in the tilt of the particles and drive said first and second semiconductive filaments (A1 and A2) toward the center of the SNA, thereby driving the first and second electrical semiconductive disks toward each other and contracting the whole SNA; • wherein the particles have optimized dimensions by means of the equation R* = 27kTd 0 /H, where spheres of radius R* represent the dimensions particles, k is the Boltzmann's constant, T is the thermodynamic temperature, d 0 is the smallest possible approach of the particles, and H is the Hammaker's constant, respectively, to attain the maximal decrease of density of internal energy; • wherein repeated small twitches between filaments (A1 and A2) cumulate and produce relatively larger displacement. • a number of first electrical semiconductive filaments connected to a first electrical semiconductive disk; • a number of second electrical semiconductive filaments connected to a second electrical semiconductive disk; • wherein the first semiconductive filaments extend toward the second electrical semiconductive disk and the second semiconductive filaments extend toward the first electrical semiconductive disk, the two semiconductive disks defining the opposite ends of the SNA; • wherein there is a symmetrical distribution of at least three particles around the first and second semiconductive filaments (A1 and A2), said particles being linked to third filaments, which are embedded in a bundle of filaments forming stronger filament, extending between the first and second semiconductive filaments (A1 and A2); • wherein the surface of the particles, disks and filaments has the same electrical charge, the position of the particles and filaments in the relaxation state being controlled by electrostatic repulsion forces; • wherein, in the contraction state, the first and second semiconductive filaments (A1 and A2) are surrounded by the layer of ions with an opposite charge to the charge on the surface on the whole part of the SNA, causing local neutralization of the electrostatic repulsion; • wherein constant influence of van der Waal's attractive forces in the area of the first and second semiconductive filaments (A1 and A2) causes mutual attraction of the particles and their contact with the said first and second semiconductive filaments (A1 and A2) and the continuing attraction of the partcles result in the tilt of the particles and drive said first and second semiconductive filaments (A1 and A2) toward the center of the SNA, thereby driving the first and second electrical semiconductive disks toward each other and contracting the whole SNA; • wherein the particles have optimized dimensions by means of the equation R* = 27kTd 0 /H, where spheres of radius R* represent the dimensions particles, k is the Boltzmann's constant, T is the thermodynamic temperature, d 0 is the smallest possible approach of the particles, and H is the Hammaker's constant, respectively, to attain the maximal decrease of density of internal energy; • wherein repeated small twitches between filaments (A1 and A2) cumulate and produce relatively larger displacement.