A computer-controlled apparatus (1100, 2000) for laser scribing at least one line segment via hole (163, 165, 165', 167) in a thin-film device that comprises on a first side of at least one substrate, at least: - one front-contact layer (150, 152, 154, 156, 158); - one semiconductive optoelectronically active layer; - one back-contact layer (120, 124, 126, 128, 129); wherein the apparatus comprising: - at least one laser source (1110, 1120) emitting at least one laser beam (1111, 1121); - means comprising at least one mirror (1150, 1151) that cooperates with said at least one laser beam to form at least one laser spot (7200, 7300, 7400, 7500, 7600, 7700) on the first side of said device; - at least one actuator (1115, 1116, 1125, 1126, 1130, 1150, 1151, 2140, 2150, 2260, 2265, 2280, 2285) configured to move at least one laser spot for laser scribing the thin-film device along at least one direction (101, 102) by delivering laser power to said thin-film device; - at least one optical sensor (1146, 1160) configured to acquire imaging data of said first side of said at least one line segment via hole (163, 165, 165', 167), and - at least one control system, comprising a processing unit and a memory unit, for executing instructions for processing said imaging data, characterized in that said control system is operative to execute: - image processing instructions (6140, 6146, 6147) for measuring in the imaging data, along a direction that is orthogonal to at least one direction of laser scribing (101, 102) said at least one line segment via hole (163, 165, 165', 167): - a first characteristic of a line segment via hole, namely the width of a curl-up of the back-contact layer (120, 124, 126, 128, 129); - a second characteristic of a line segment via hole, namely the width of a lip of conductive alloy resulting from a permanent change in the chemical composition of the semiconductive optoelectronically active layer where the line segment via hole (163, 165, 165', 167) is drilled. - one front-contact layer (150, 152, 154, 156, 158); - one semiconductive optoelectronically active layer; - one back-contact layer (120, 124, 126, 128, 129); - at least one laser source (1110, 1120) emitting at least one laser beam (1111, 1121); - means comprising at least one mirror (1150, 1151) that cooperates with said at least one laser beam to form at least one laser spot (7200, 7300, 7400, 7500, 7600, 7700) on the first side of said device; - at least one actuator (1115, 1116, 1125, 1126, 1130, 1150, 1151, 2140, 2150, 2260, 2265, 2280, 2285) configured to move at least one laser spot for laser scribing the thin-film device along at least one direction (101, 102) by delivering laser power to said thin-film device; - at least one optical sensor (1146, 1160) configured to acquire imaging data of said first side of said at least one line segment via hole (163, 165, 165', 167), and - at least one control system, comprising a processing unit and a memory unit, for executing instructions for processing said imaging data, characterized in that said control system is operative to execute: - image processing instructions (6140, 6146, 6147) for measuring in the imaging data, along a direction that is orthogonal to at least one direction of laser scribing (101, 102) said at least one line segment via hole (163, 165, 165', 167): - a first characteristic of a line segment via hole, namely the width of a curl-up of the back-contact layer (120, 124, 126, 128, 129); - a second characteristic of a line segment via hole, namely the width of a lip of conductive alloy resulting from a permanent change in the chemical composition of the semiconductive optoelectronically active layer where the line segment via hole (163, 165, 165', 167) is drilled. - image processing instructions (6140, 6146, 6147) for measuring in the imaging data, along a direction that is orthogonal to at least one direction of laser scribing (101, 102) said at least one line segment via hole (163, 165, 165', 167): - a first characteristic of a line segment via hole, namely the width of a curl-up of the back-contact layer (120, 124, 126, 128, 129); - a second characteristic of a line segment via hole, namely the width of a lip of conductive alloy resulting from a permanent change in the chemical composition of the semiconductive optoelectronically active layer where the line segment via hole (163, 165, 165', 167) is drilled.