An organic light-emitting diode display, comprising: a substrate having a plurality of pixel regions defined in a matrix, each pixel region having an emission area, a thin film transistor (ST, DT) and a storage capacitor connected to the thin film transistor (ST, DT) in each pixel region, a passivation layer covering the thin film transistor (ST, DT) and having a pixel contact hole partially exposing the thin film transistor, an overcoat layer covering the passivation layer and exposing the pixel contact hole and a part of the passivation layer, an anode on the part of the passivation layer exposed by the overcoat layer and on the overcoat layer, and connected to the thin film transistor in each pixel region, a bank having an island shape with an opening region at the center thereof, which exposes the emission area, the bank is covering an edge of the anode and having an inside boundary at a first distance from the edge of the anode, the inside boundary is located on the anode so as to come into contact with the upper surface of the anode and defines an area which exposes the emission area of the pixel region and an outside boundary at a second distance from the edge of the anode at the far side of the emission area of the pixel region, the outside boundary is located on the overcoat layer so as to come in contact with the upper surface of the overcoat layer and defines an area taking the same shape as the anode; a switching light-shielding layer, a driving light-shielding layer and a storage capacitor lower electrode formed on the substrate; and wherein the anode on the part of the passivation layer is overlapped with the storage capacitor lower electrode on the substrate and the passivation layer is interposed therebetween to form the storage capacitor. a substrate having a plurality of pixel regions defined in a matrix, each pixel region having an emission area, a thin film transistor (ST, DT) and a storage capacitor connected to the thin film transistor (ST, DT) in each pixel region, a passivation layer covering the thin film transistor (ST, DT) and having a pixel contact hole partially exposing the thin film transistor, an overcoat layer covering the passivation layer and exposing the pixel contact hole and a part of the passivation layer, an anode on the part of the passivation layer exposed by the overcoat layer and on the overcoat layer, and connected to the thin film transistor in each pixel region, a bank having an island shape with an opening region at the center thereof, which exposes the emission area, the bank is covering an edge of the anode and having an inside boundary at a first distance from the edge of the anode, the inside boundary is located on the anode so as to come into contact with the upper surface of the anode and defines an area which exposes the emission area of the pixel region and an outside boundary at a second distance from the edge of the anode at the far side of the emission area of the pixel region, the outside boundary is located on the overcoat layer so as to come in contact with the upper surface of the overcoat layer and defines an area taking the same shape as the anode; a switching light-shielding layer, a driving light-shielding layer and a storage capacitor lower electrode formed on the substrate; and wherein the anode on the part of the passivation layer is overlapped with the storage capacitor lower electrode on the substrate and the passivation layer is interposed therebetween to form the storage capacitor.