A semiconductor drive device including: a turn-on drive circuit including a forward biasing power source, a first switching element, and a turn-on gate resistor for turning on a semiconductor element; and a turn-off drive circuit including a reverse biasing power source, a second switching element, and a turn-off gate resistor for turning off the semiconductor element, wherein the forward biasing power source and the reverse biasing power source are connected in series, characterized in that a first series circuit of a first thermistor thermally joined to the turn-on gate resistor and a first resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and the negative electrode of the forward biasing power source; a second series circuit of a second thermistor thermally joined to the turn-off gate resistor and a second resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source if the first series circuit is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and the negative electrode of the reverse biasing power source if the first series circuit is connected between the positive electrode and the negative electrode of the forward biasing power source; there is provided means of turning off the first or the second switching element (Tr1, Tr2) when the temperature of either one of the turn-on gate resistor or turn-off gate resistor rises to or above a predetermined value; and the means of turning off the first switching element is a third switching element, wherein a control terminal of the third switching element is connected to an internal connection point of the first series circuit, one main terminal of the third switching element is connected to the positive electrode of the forward biasing power source, and the other main terminal of the third switching element is connected to a control terminal of the first switching element. a turn-on drive circuit including a forward biasing power source, a first switching element, and a turn-on gate resistor for turning on a semiconductor element; and a turn-off drive circuit including a reverse biasing power source, a second switching element, and a turn-off gate resistor for turning off the semiconductor element, a first series circuit of a first thermistor thermally joined to the turn-on gate resistor and a first resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and the negative electrode of the forward biasing power source; a second series circuit of a second thermistor thermally joined to the turn-off gate resistor and a second resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source if the first series circuit is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and the negative electrode of the reverse biasing power source if the first series circuit is connected between the positive electrode and the negative electrode of the forward biasing power source;