A three dimensional memory array (430; 544), comprising: a stack comprising a plurality of first conductive lines (522, 622, 722, 822, 922) at a number of levels separated from one another by at least an insulation material; at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056) arranged to extend substantially perpendicular to the plurality of first conductive lines (522, 622, 722, 822, 922); a plurality of second conductive lines having a first quantity (524, 624, 724, 824, 924) formed above the first conductive lines (522, 622, 722, 822, 922) and a second quantity (551, 651, 751, 851, 951) formed below the first conductive lines (522, 622, 722, 822, 922), wherein one of the plurality of second conductive lines contacts the at least one conductive extension; storage element material (554; 854T, 854B; 1054) formed around the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056); and cell select material (552; 852T, 852B; 1055, 1052) formed around the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056); wherein: the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056), storage element material (554; 854T, 854B; 1054), and cell select material (552; 852T, 852B; 1055, 1052) are located between co-planar pairs of the plurality of first conductive lines (522, 622, 722, 822, 922); and the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056) includes a plurality of conductive extensions, wherein each of the plurality of second conductive lines are arranged to be communicatively coupled to every other one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) in a direction substantially perpendicular to the plurality of first conductive lines (522, 622, 722, 822, 922), each respective one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) being coupled to only one of either the first quantity of the plurality of second conductive lines or the second quantity of the plurality of second conductive lines.. a stack comprising a plurality of first conductive lines (522, 622, 722, 822, 922) at a number of levels separated from one another by at least an insulation material; at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056) arranged to extend substantially perpendicular to the plurality of first conductive lines (522, 622, 722, 822, 922); a plurality of second conductive lines having a first quantity (524, 624, 724, 824, 924) formed above the first conductive lines (522, 622, 722, 822, 922) and a second quantity (551, 651, 751, 851, 951) formed below the first conductive lines (522, 622, 722, 822, 922), wherein one of the plurality of second conductive lines contacts the at least one conductive extension; storage element material (554; 854T, 854B; 1054) formed around the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056); and cell select material (552; 852T, 852B; 1055, 1052) formed around the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056); wherein: the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056), storage element material (554; 854T, 854B; 1054), and cell select material (552; 852T, 852B; 1055, 1052) are located between co-planar pairs of the plurality of first conductive lines (522, 622, 722, 822, 922); and the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056) includes a plurality of conductive extensions, wherein each of the plurality of second conductive lines are arranged to be communicatively coupled to every other one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) in a direction substantially perpendicular to the plurality of first conductive lines (522, 622, 722, 822, 922), each respective one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) being coupled to only one of either the first quantity of the plurality of second conductive lines or the second quantity of the plurality of second conductive lines.. the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056), storage element material (554; 854T, 854B; 1054), and cell select material (552; 852T, 852B; 1055, 1052) are located between co-planar pairs of the plurality of first conductive lines (522, 622, 722, 822, 922); and the at least one conductive extension (556; 856T, 856B; 926T, 926B; 1056) includes a plurality of conductive extensions, wherein each of the plurality of second conductive lines are arranged to be communicatively coupled to every other one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) in a direction substantially perpendicular to the plurality of first conductive lines (522, 622, 722, 822, 922), each respective one of the plurality of conductive extensions (556; 856T, 856B; 926T, 926B; 1056) being coupled to only one of either the first quantity of the plurality of second conductive lines or the second quantity of the plurality of second conductive lines..