mhurhangee/ep-ind-claims huggingface dataset:
System for actively influencing noise, having a sound generator, which is configured to generate sound when an audio signal is sent to it and to superimpose the generated sound to a sound to be manipulated, an error sensor, which measures superimposed sound, which is obtained from the superimposition of the sound generated by the sound generator with the sound to be manipulated and outputs a corresponding feedback signal (e'(n)); a signal generator, which generates and outputs a sound signal (y(n)); a controller, which generates a control signal (λ(n)), wherein the control signal (λ(n)) represents a value of a sequence of rational numbers; a first weighter, which receives the sound signal (y(n)) outputted by the signal generator, z-transforms it, convolutes it with an estimate of the z-transform of the transfer function of the sound generator ( Ŝ(z)) and weights and inverts it with the control signal (λ(n)) generated by the controller; an adder, which adds the sound signal thus weighted and inverted to the feedback signal (e'(n)) and outputs the modified feedback signal (e(n)) thus obtained to the signal generator; and a second weighter, which weights the sound signal (y(n)) outputted by the signal generator with the difference between one and the control signal (λ(n)) generated by the controller and outputs the sound signal (y'(n)) thus weighted to generate the audio signal; wherein the signal generator is configured to generate the sound signal (y(n)) as a function of the modified feedback signal (e(n));and wherein the controller generates the control signal λ(n) as a function of an input wave vector ( x (n)), which depends on a state of the source of the sound to be manipulated.
An organic light-emitting device comprising an anode; cathode; a light-emitting layer between the anode and the cathode; and a hole-transporting layer between the anode and the cathode and adjacent to the light-emitting layer, wherein the light-emitting layer comprises a light-emitting compound of formula and the hole-transporting layer comprises a hole-transporting material having a HOMO level that is no more than 5.1 eV from vacuum level: wherein: R 1 in each occurrence is independently a substituent; R 2 is H or a substituent; m is 0, 1 or 2 n is 0, 1, 2, 3 or 4; M is a transition metal; L is an O,O-bidentate ligand; y is at least 1; and x is 0 or a positive integer; wherein the HOMO level of the compound of formula is closer to vacuum level than the HOMO level of the hole-transporting material; wherein the HOMO level of the compound of formula and of the hole-transporting material are measured by square wave voltammetry, as defined in the description; and wherein the hole-transporting material is a non-polymeric compound of formula or a polymer comprising a repeat unit of formula (III-2): wherein Ar 8, Ar 9, Ar 10, Ar 11 and Ar 12 in each occurrence are independently selected from aryl or heteroaryl, each of which may independently be unsubstituted or substituted with one or more substituents; R 3, R 4, R 5 and R 6 are each independently a substituent, optionally an aryl or heteroaryl group Ar 13; p is 0 or 1; and any two aromatic or heteroaromatic groups selected from Ar 8, Ar 9, Ar 10, Ar 11 and Ar 12 directly bound to the same N atom may be linked by a direct bond or a divalent linking atom or group. R 1 in each occurrence is independently a substituent; R 2 is H or a substituent; m is 0, 1 or 2 n is 0, 1, 2, 3 or 4; M is a transition metal; L is an O,O-bidentate ligand; y is at least 1; and x is 0 or a positive integer; wherein the HOMO level of the compound of formula is closer to vacuum level than the HOMO level of the hole-transporting material; wherein the HOMO level of the compound of formula and of the hole-transporting material are measured by square wave voltammetry, as defined in the description; and wherein the hole-transporting material is a non-polymeric compound of formula or a polymer comprising a repeat unit of formula (III-2): wherein Ar 8, Ar 9, Ar 10, Ar 11 and Ar 12 in each occurrence are independently selected from aryl or heteroaryl, each of which may independently be unsubstituted or substituted with one or more substituents; R 3, R 4, R 5 and R 6 are each independently a substituent, optionally an aryl or heteroaryl group Ar 13; p is 0 or 1; and any two aromatic or heteroaromatic groups selected from Ar 8, Ar 9, Ar 10, Ar 11 and Ar 12 directly bound to the same N atom may be linked by a direct bond or a divalent linking atom or group.
A brake pad for a disc brake comprising: a resin back plate; and a friction material joined to one surface of the resin back plate, wherein the resin back plate is formed of a cured product of a first thermosetting resin composition, and a metal reinforcing material (20, 400) is provided over a surface of the resin back plate opposite to the surface joined to the friction material, wherein the metal reinforcing material (20, 400) is at least one kind of metal reinforcing material (20, 400) selected from the group consisting of a plate material, a mesh material, and a bar material, wherein a portion of the metal reinforcing material (20, 400) is embedded in the resin back plate, and a portion of a surface of the metal reinforcing material (20, 400) is exposed, wherein, when it is assumed that the surface of the resin back plate opposite to the surface joined to the friction material is an upper surface and an area of the upper surface is S, an area of the metal reinforcing material (20, 400) when seen in a plan view is S/2 or more, and wherein, when it is assumed that at a point over the surface of the back plate opposite to the surface joined to the friction material, a thickness of the back plate at the point is T, the metal reinforcing material (20, 400) is not present at a depth of T/2 or more from the surface opposite to the surface joined to the friction material at the point. a resin back plate; and a friction material joined to one surface of the resin back plate, wherein the resin back plate is formed of a cured product of a first thermosetting resin composition, and a metal reinforcing material (20, 400) is provided over a surface of the resin back plate opposite to the surface joined to the friction material, wherein the metal reinforcing material (20, 400) is at least one kind of metal reinforcing material (20, 400) selected from the group consisting of a plate material, a mesh material, and a bar material, wherein a portion of the metal reinforcing material (20, 400) is embedded in the resin back plate, and a portion of a surface of the metal reinforcing material (20, 400) is exposed, wherein, when it is assumed that the surface of the resin back plate opposite to the surface joined to the friction material is an upper surface and an area of the upper surface is S, an area of the metal reinforcing material (20, 400) when seen in a plan view is S/2 or more, and wherein, when it is assumed that at a point over the surface of the back plate opposite to the surface joined to the friction material, a thickness of the back plate at the point is T, the metal reinforcing material (20, 400) is not present at a depth of T/2 or more from the surface opposite to the surface joined to the friction material at the point.
An apparatus, comprising: logic circuitry configured to: receive, from a state machine (111, 211), a command indicating that an access to a base address register (106, 206, 306, 406) deployed on a memory controller (113, 213) coupled to the logic circuitry has occurred, the command indicative of a data access involving a persistent memory device (316, 416), a non-persistent memory device (330, 430), or both; determine, by the logic circuitry, that the access command corresponds to an operation to divert data from the non-persistent memory device (330, 430) to the persistent memory device (316, 416); generate, by the logic circuitry and responsive to receipt of the access command and the determination, an interrupt signal, wherein the interrupt signal is generated by accessing a second base address register and using an interrupt component; and cause, by the state machine (111, 211), the interrupt signal to be asserted on a host coupleable to the logic circuitry as part of the operation to divert data from the non-persistent memory device (330, 430) to the persistent memory device (316, 416). receive, from a state machine (111, 211), a command indicating that an access to a base address register (106, 206, 306, 406) deployed on a memory controller (113, 213) coupled to the logic circuitry has occurred, the command indicative of a data access involving a persistent memory device (316, 416), a non-persistent memory device (330, 430), or both; determine, by the logic circuitry, that the access command corresponds to an operation to divert data from the non-persistent memory device (330, 430) to the persistent memory device (316, 416); generate, by the logic circuitry and responsive to receipt of the access command and the determination, an interrupt signal, wherein the interrupt signal is generated by accessing a second base address register and using an interrupt component; and cause, by the state machine (111, 211), the interrupt signal to be asserted on a host coupleable to the logic circuitry as part of the operation to divert data from the non-persistent memory device (330, 430) to the persistent memory device (316, 416).
A method for measuring a voltage drop at a node (V IN), the method comprising: having a circuit comprising an analog-to-digital converter, a current sink, and a controller, an input of the analog-to-digital converter and an input of the current sink coupled to the node (V IN); determining a set point for the current sink; sampling an output of the analog-to-digital converter during the voltage drop; and computing a relative voltage drop value comprising subtracting the sampled output of the analog-to-digital converter during the voltage drop from a sampled output of the analog-to-digital converter during a steady-state condition, the current sink operating at the set point during the steady-state condition and during the voltage drop, characterized in that determining the set point for the current sink comprises: sampling a first output of the analog-to-digital converter during a second steady-state condition, the current sink disabled during the second steady-state condition; and selectively adjusting an amount of current sunk through the current sink until the output of the analog-to-digital converter is at a targeted value relative to the first output. having a circuit comprising an analog-to-digital converter, a current sink, and a controller, an input of the analog-to-digital converter and an input of the current sink coupled to the node (V IN); determining a set point for the current sink; sampling an output of the analog-to-digital converter during the voltage drop; and computing a relative voltage drop value comprising subtracting the sampled output of the analog-to-digital converter during the voltage drop from a sampled output of the analog-to-digital converter during a steady-state condition, the current sink operating at the set point during the steady-state condition and during the voltage drop, sampling a first output of the analog-to-digital converter during a second steady-state condition, the current sink disabled during the second steady-state condition; and selectively adjusting an amount of current sunk through the current sink until the output of the analog-to-digital converter is at a targeted value relative to the first output.
A zirconium nitride powder having a volume resistivity of 10 7 Ω·cm or more in a state of a pressurized powder body hardened at a pressure of 5 MPa, measured by a four-terminal four-probe method using a low-resistivity meter and a particle size distribution D 90 of 10 μm or less, wherein the particle size pertains to secondary particles in which primary zirconium nitride particles are aggregated, wherein the particle size distribution is measured by a laser diffraction scattering method by ultrasonically dispersing the secondary particles for 5 minutes in a state of being diluted with water or an alcohol having a carbon number of 2 to 5. a volume resistivity of 10 7 Ω·cm or more in a state of a pressurized powder body hardened at a pressure of 5 MPa, measured by a four-terminal four-probe method using a low-resistivity meter and a particle size distribution D 90 of 10 μm or less, wherein the particle size pertains to secondary particles in which primary zirconium nitride particles are aggregated, wherein the particle size distribution is measured by a laser diffraction scattering method by ultrasonically dispersing the secondary particles for 5 minutes in a state of being diluted with water or an alcohol having a carbon number of 2 to 5.
A lubricating fluid comprising carboxyl di-ester of polytetramethylene glycol independently selected from the group consisting of a first carboxyl di-ester of polytetramethylene glycol having the structure of formula: wherein R 1 and R 2 each independently comprise linear alkyl groups each having 5 to 11 carbon atoms and m ranges from 2 to 4; a second carboxyl di-ester of polytetramethylene glycol having the structure of formula: wherein R 4 and R 5 each independently comprise linear alkyl groups each having 5 to 11 carbon atoms; R 3 is derived from a dimer carboxylic acid having 24 -36 carbon atoms. and n ranges from 2 to 4 and o ranges from 2 to 4; and mixtures thereof, wherein the lubricant fluid is not 5-oxa-1,9-nonane diol dicaprylate. a first carboxyl di-ester of polytetramethylene glycol having the structure of formula: wherein R 1 and R 2 each independently comprise linear alkyl groups each having 5 to 11 carbon atoms and m ranges from 2 to 4; a second carboxyl di-ester of polytetramethylene glycol having the structure of formula: wherein R 4 and R 5 each independently comprise linear alkyl groups each having 5 to 11 carbon atoms; R 3 is derived from a dimer carboxylic acid having 24 -36 carbon atoms. and n ranges from 2 to 4 and o ranges from 2 to 4; and mixtures thereof, wherein the lubricant fluid is not 5-oxa-1,9-nonane diol dicaprylate.
A corrosion-inhibiting coating material bonded to a metal substrate, the coating material comprising: a corrosion-inhibiting compound that is 5,5-dithiobis-(1,3,4-thiadiazole-2 -thione) or a polymer of 2,5-dimercapto-1,3,4-thiadiazole including at least one disulfide group; and a zirconium-based sol-gel bonded to the metal substrate; wherein the corrosion-inhibiting compound is contained within the zirconium-based sol-gel. a corrosion-inhibiting compound that is 5,5-dithiobis-(1,3,4-thiadiazole-2 -thione) or a polymer of 2,5-dimercapto-1,3,4-thiadiazole including at least one disulfide group; and a zirconium-based sol-gel bonded to the metal substrate; wherein the corrosion-inhibiting compound is contained within the zirconium-based sol-gel.
A microparticle comprising a matrix and a probiotic bacterium, wherein said matrix consists in casein and chitosan, wherein the chitosan:casein by weight ratio is 1:5-150.
Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: a) growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material by at least one epitaxy, so as to form source and drain blocks (24, 26) with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, b) in-depth amorphisation of part (24a, 26a) of zones made of a second semiconducting material so as to keep only one layer (24b, 26b) of the second crystalline semiconducting material on the surface of the source and drain blocks (24, 26), and amorphisation of at least the zones (6a, 6b) of the layer made of a first semiconducting material located under zones made of a second semiconducting material, c) recrystallisation of the source and drain blocks (24, 26) such that the second semiconducting material imposes its lattice parameter on the source and drain zones. a) growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material by at least one epitaxy, so as to form source and drain blocks (24, 26) with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, b) in-depth amorphisation of part (24a, 26a) of zones made of a second semiconducting material so as to keep only one layer (24b, 26b) of the second crystalline semiconducting material on the surface of the source and drain blocks (24, 26), and amorphisation of at least the zones (6a, 6b) of the layer made of a first semiconducting material located under zones made of a second semiconducting material, c) recrystallisation of the source and drain blocks (24, 26) such that the second semiconducting material imposes its lattice parameter on the source and drain zones.
A media file sharing method, characterized in that, the method comprises: presetting and saving a local area network, LAN, a Digital Living Network Alliance, DLNA application and a media file that are default during a sharing process; establishing a sharing pair relationship between a master device and a slave device in the DLNA application; generating a Near Field Communication, NFC triggering label embedded in the master device according to the LAN, the DLNA application, the media file and the sharing pair relationship; activating the NFC triggering label by the master device through an NFC sensing operation; the master device and the slave device logging into the LAN and the DLNA application that are default according to the NFC triggering label and completing the sharing pairing according to the sharing pair relationship; and receiving the media file from the master device by the slave device and completing the processing of the media file. presetting and saving a local area network, LAN, a Digital Living Network Alliance, DLNA application and a media file that are default during a sharing process; establishing a sharing pair relationship between a master device and a slave device in the DLNA application; generating a Near Field Communication, NFC triggering label embedded in the master device according to the LAN, the DLNA application, the media file and the sharing pair relationship; activating the NFC triggering label by the master device through an NFC sensing operation; the master device and the slave device logging into the LAN and the DLNA application that are default according to the NFC triggering label and completing the sharing pairing according to the sharing pair relationship; and receiving the media file from the master device by the slave device and completing the processing of the media file.
A method of wireless communication, comprising: determining a set of subframes with a reduced likelihood of being received as uplink transmissions of a first user equipment, UE by identifying subframes for uplink transmission of the first UE that experience interference from downlink transmissions of a base station; and scheduling uplink transmissions of the first UE by scheduling a contention resolution message of a PRACH process on downlink subframes so that an acknowledge, ACK message of the contention resolution is transmitted on the uplink subframes that do not experience interference from a base station. determining a set of subframes with a reduced likelihood of being received as uplink transmissions of a first user equipment, UE by identifying subframes for uplink transmission of the first UE that experience interference from downlink transmissions of a base station; and scheduling uplink transmissions of the first UE by scheduling a contention resolution message of a PRACH process on downlink subframes so that an acknowledge, ACK message of the contention resolution is transmitted on the uplink subframes that do not experience interference from a base station.
A two or three-ply dipped and heat-set polyamide 6.6 cord which is prepared from polyamide 6.6 raw yarns having the tensile stress value greater than 1,30 cN/dtex, preferably between 1,35 and 1,60 cN/dtex at 4% elongation (determined with tensile tester according to ASTM D885-16) is characterized that, - its stress at 4% elongation (determined with tensile tester according to ASTM D885-16) is higher than 1.2cN/dtex and less than 2.0cN/dtex, - and its heat shrinkage is higher than 4.0% and less than 7.0% determined at 177 °C under 0.045 g/dtex pretension with 2minutes exposure time. - its stress at 4% elongation (determined with tensile tester according to ASTM D885-16) is higher than 1.2cN/dtex and less than 2.0cN/dtex, - and its heat shrinkage is higher than 4.0% and less than 7.0% determined at 177 °C under 0.045 g/dtex pretension with 2minutes exposure time.
Machine tool, in particular for the processing of materials or pieces used in the building industry such as tiles or slabs of stone materials, comprising a rotary tool grafted on a spindle driven by a high speed electric motor, wherein said motor is housed, in a predetermined position, in a watertight chamber formed within a containing base of said machine tool which, at its top, has a perforated surface from which protrudes the tool and on which is supported the material or piece to be processed, characterized in that said base has, in correspondence of the tool, a nozzle fed by a pump immersed in the same base, for cooling and lubrication of the tool by using the liquid which collects in it through the holes of the supporting surface.
A torque sensor including a first resolver that outputs a signal corresponding to a rotation angle of a first rotor fitted on an outer periphery of a first rotary shaft, and a second resolver that outputs a signal corresponding to a rotation angle of a second rotor fitted on an outer periphery of a second rotary shaft that is coupled to the first rotary shaft via a torsion bar, the torque sensor detecting a torque exerted on the first rotary shaft or the second rotary shaft based on the signals output from the first resolver and the second resolver, characterized in that the shaft angle multiplier of the second resolver is different from the shaft angle multiplier of the first resolver and in that a first junction between the first rotary shaft and the first rotor and a second junction between the second rotary shaft and the second rotor are formed so as to have different shapes or different sizes.
A roll mill to be used for a milling-dispersing treatment of a substance such as fine powder or nano particles, in a material to be treated, which comprises a fixed roll fixed to a frame and a transfer roll disposed in such a manner that it may be touched to or detached from the fixed roll, wherein the transfer roll (2, 3) is installed on the frame via a linear motion guide to be slightly movable in a perpendicular direction to the fixed roll by a servomotor and a ball screw; a laser sensor for directly irradiating a roll flange portion at the end of the roll with a laser beam to measure the distance between the rolls and a load sensor for measuring a pressing force between the rolls are provided; and an electronic automatic control mechanism for keeping a constant distance and a constant pressing force between the fixed roll and the transfer roll (2, 3) by feed back of detected signals sent with time from respective sensors (18, 10) is provided, wherein the servomotor is driven by the electronic automatic control mechanism to successively adjust the position of the transfer roll (2, 3).
A thin-film transistor, comprising a semiconductor layer, wherein the semiconductor layer comprises a channel layer and comprises a material of Sn-doped ZrO 2, the material of Sn-doped ZrO 2 is a major composition of the semiconductor layer, and a mass percentage of Sn doped in the ZrO 2 is about 50% - 90%.