An organic light emitting diode display device; wherein the organic light emitting diode display device comprises: an array substrate (201, 301) comprising a plurality of pixel opening areas; a light emitting device located in each of the pixel opening areas on the array substrate (201, 301); wherein the light emitting device comprises: a hole transport layer (204, 304), a luminescent layer (206, 306) and an electron transport layer (208, 308); wherein a vertical projection of the luminescent layer (206, 306) on the array substrate (201, 301) defines the pixel opening area; both a vertical projection of the hole transport layer (204, 304) on the array substrate (201, 301) and a vertical projection of the electron transport layer (208, 308) on the array substrate (201, 301) partially cover the pixel opening area; the vertical projection of the hole transport layer (204, 304) on the array substrate (201, 301) and the vertical projection of the electron transport layer (208, 308) on the array substrate (201, 301) do not overlap with each other; wherein the light emitting device further comprises: a hole injection layer (203, 303) located on a side of the hole transport layer (204, 304) departing from the luminescent layer (206, 306), an electron injection layer (209, 309) located on a side of the electron transport layer (208, 308) departing from the luminescent layer (206, 306), an anode (202, 302) located on a side of the hole injection layer (203, 303) departing from the luminescent layer (206, 306), and a cathode (2010, 3010) located on a side of the electron injection layer (209, 309) departing from the luminescent layer (206, 306); the hole injection layer (203, 303) completely overlaps with the hole transport layer (204, 304); the electron injection layer (209, 309) completely overlaps with the electron transport layer (208, 308); characterized in that the hole transport layer (204, 304) is located on a side of the luminescent layer (206, 306) facing the array substrate (201, 301), and the electron transport layer (208, 308) is located on a side of the luminescent layer (206, 306) departing away the array substrate (201, 301); the anode (202, 302) completely overlaps with the luminescent layer (206, 306) or the hole injection layer (203, 303), the cathode (2010, 3010) completely overlaps with the electron injection layer (209, 309). an array substrate (201, 301) comprising a plurality of pixel opening areas; a light emitting device located in each of the pixel opening areas on the array substrate (201, 301); wherein the light emitting device comprises: a hole transport layer (204, 304), a luminescent layer (206, 306) and an electron transport layer (208, 308); wherein a vertical projection of the luminescent layer (206, 306) on the array substrate (201, 301) defines the pixel opening area; both a vertical projection of the hole transport layer (204, 304) on the array substrate (201, 301) and a vertical projection of the electron transport layer (208, 308) on the array substrate (201, 301) partially cover the pixel opening area; the vertical projection of the hole transport layer (204, 304) on the array substrate (201, 301) and the vertical projection of the electron transport layer (208, 308) on the array substrate (201, 301) do not overlap with each other; wherein the light emitting device further comprises: a hole injection layer (203, 303) located on a side of the hole transport layer (204, 304) departing from the luminescent layer (206, 306), an electron injection layer (209, 309) located on a side of the electron transport layer (208, 308) departing from the luminescent layer (206, 306), an anode (202, 302) located on a side of the hole injection layer (203, 303) departing from the luminescent layer (206, 306), and a cathode (2010, 3010) located on a side of the electron injection layer (209, 309) departing from the luminescent layer (206, 306); the hole injection layer (203, 303) completely overlaps with the hole transport layer (204, 304); the electron injection layer (209, 309) completely overlaps with the electron transport layer (208, 308); characterized in that the hole transport layer (204, 304) is located on a side of the luminescent layer (206, 306) facing the array substrate (201, 301), and the electron transport layer (208, 308) is located on a side of the luminescent layer (206, 306) departing away the array substrate (201, 301); the anode (202, 302) completely overlaps with the luminescent layer (206, 306) or the hole injection layer (203, 303), the cathode (2010, 3010) completely overlaps with the electron injection layer (209, 309).