A light emitting device comprising: a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure (340, 350, 360) comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer disposed between the first conductive layer and the second conductive layer, wherein the insulation layer includes a first insulation layer and a second insulation layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the conductive via includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and is disposed in the first semiconductor layer, wherein the first insulation layer is disposed on the lateral surface of the first expansion part and electrically insulates the second conductive layer from the first expansion part, the second semiconductor layer from the first expansion part, and the active layer from the first expansion part, and wherein the second insulation layer is disposed between the first conductive layer and the second conductive layer, and electrically insulates the first conductive layer from the second conductive layer, characterised in that the width of the second expansion part is greater than that of the first expansion part and the first conductive layer is electrically directly connected to the first semiconductor layer through the top surface and the lateral surface of the second expansion part. a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure (340, 350, 360) comprising a first semiconductor layer disposed on the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the second conductive layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer disposed between the first conductive layer and the second conductive layer, wherein the insulation layer includes a first insulation layer and a second insulation layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the conductive via includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and is disposed in the first semiconductor layer, wherein the first insulation layer is disposed on the lateral surface of the first expansion part and electrically insulates the second conductive layer from the first expansion part, the second semiconductor layer from the first expansion part, and the active layer from the first expansion part, and wherein the second insulation layer is disposed between the first conductive layer and the second conductive layer, and electrically insulates the first conductive layer from the second conductive layer, characterised in that the width of the second expansion part is greater than that of the first expansion part and the first conductive layer is electrically directly connected to the first semiconductor layer through the top surface and the lateral surface of the second expansion part. wherein the insulation layer includes a first insulation layer and a second insulation layer, wherein the first conductive layer includes a conductive via penetrating through the second conductive layer, the second semiconductor layer and the active layer and being disposed in the first semiconductor layer, wherein the conductive via includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part extending from the first expansion part and is disposed in the first semiconductor layer, wherein the first insulation layer is disposed on the lateral surface of the first expansion part and electrically insulates the second conductive layer from the first expansion part, the second semiconductor layer from the first expansion part, and the active layer from the first expansion part, and wherein the second insulation layer is disposed between the first conductive layer and the second conductive layer, and electrically insulates the first conductive layer from the second conductive layer, characterised in that the width of the second expansion part is greater than that of the first expansion part and the first conductive layer is electrically directly connected to the first semiconductor layer through the top surface and the lateral surface of the second expansion part.