A semiconductor structure for an electronic power switch, including: - a substrate of a first type of conductivity, having a lower face and an upper face, - a drain electrode in contact with the lower face of the substrate, - a first semiconductor region of the first type of conductivity, having a lower surface arranged on the upper face of the substrate, and an upper surface provided with a contact area, - a source electrode in contact with the contact area of the first semiconductor region, - a second semiconductor region, of a second type of conductivity, arranged inside the first semiconductor region, under the contact area, so as to delimit a first and a second conduction channels (C1, C2) of the first type of conductivity between the drain electrode and the source electrode, the second conduction channel extending in a second substantially vertical direction and the first conduction channel extending in a first direction substantially perpendicular to the second direction, the semiconductor structure further including: - a first metal gate electrode independent of the source electrode and having at least a first portion in contact with the second semiconductor region, and at least a second portion in contact with the first semiconductor region so as to form a first Schottky-type junction, the first junction being surrounded by the second semiconductor region, and - a second metal gate electrode independent of the source electrode and having at least a first portion in contact with the upper surface of the first semiconductor region so as to form a second Schottky-type junction, the second gate electrode being arranged at a distance from the contact area. - a substrate of a first type of conductivity, having a lower face and an upper face, - a drain electrode in contact with the lower face of the substrate, - a first semiconductor region of the first type of conductivity, having a lower surface arranged on the upper face of the substrate, and an upper surface provided with a contact area, - a source electrode in contact with the contact area of the first semiconductor region, - a second semiconductor region, of a second type of conductivity, arranged inside the first semiconductor region, under the contact area, so as to delimit a first and a second conduction channels (C1, C2) of the first type of conductivity between the drain electrode and the source electrode, the second conduction channel extending in a second substantially vertical direction and the first conduction channel extending in a first direction substantially perpendicular to the second direction, - a first metal gate electrode independent of the source electrode and having at least a first portion in contact with the second semiconductor region, and at least a second portion in contact with the first semiconductor region so as to form a first Schottky-type junction, the first junction being surrounded by the second semiconductor region, and - a second metal gate electrode independent of the source electrode and having at least a first portion in contact with the upper surface of the first semiconductor region so as to form a second Schottky-type junction, the second gate electrode being arranged at a distance from the contact area.