A powered device, PD, comprised in a Power over Ethernet, PoE, system, said PD comprising an Ethernet port, a rectifier circuit, and a PD circuit, wherein the Ethernet port comprises a first contact pair, a second contact pair, a third contact pair, and a fourth contact pair, wherein the first contact pair is configured to connect to a cable pair 1-2 of an Ethernet cable; the second contact pair is configured to connect to a cable pair 3-6 of the Ethernet cable; the third contact pair is configured to connect to a cable pair 4-5 of the Ethernet cable; and the fourth contact pair is configured to connect to a cable pair 7-8 of the Ethernet cable; the rectifier circuit comprises four metal-oxide semiconductor field-effect transistors, MOSFET, and at least four diodes, wherein the four MOSFETs are a first MOSFET, a second MOSFET, a third MOSFET, and a fourth MOSFET; the at least four diodes comprise a first diode, a second diode, a third diode, and a fourth diode; the first contact pair is connected to an anode of the first diode, and is connected to a first end of the first MOSFET; the second contact pair is connected to a cathode of the second diode, and is connected to a first end of the second MOSFET; the third contact pair is connected to a cathode of the third diode, and is connected to a first end of the third MOSFET; the fourth contact pair is connected to an anode of the fourth diode, and is connected to a first end of the fourth MOSFET; a power input positive electrode of the PD circuit is connected to a cathode of the first diode, is connected to a second end of the second MOSFET, is connected to a second end of the third MOSFET, and is connected to a cathode of the fourth diode; and a power input negative electrode of the PD circuit is connected to a second end of the first MOSFET, is connected to an anode of the second diode, is connected to an anode of the third diode, and is connected to a second end of the fourth MOSFET; wherein, a gate electrode of the first MOSFET is connected to the second contact pair; a gate electrode of the second MOSFET is connected to the first contact pair; a gate electrode of the third MOSFET is connected to the fourth contact pair; and a gate electrode of the fourth MOSFET is connected to the third contact pair. the Ethernet port comprises a first contact pair, a second contact pair, a third contact pair, and a fourth contact pair, wherein the first contact pair is configured to connect to a cable pair 1-2 of an Ethernet cable; the second contact pair is configured to connect to a cable pair 3-6 of the Ethernet cable; the third contact pair is configured to connect to a cable pair 4-5 of the Ethernet cable; and the fourth contact pair is configured to connect to a cable pair 7-8 of the Ethernet cable; the rectifier circuit comprises four metal-oxide semiconductor field-effect transistors, MOSFET, and at least four diodes, wherein the four MOSFETs are a first MOSFET, a second MOSFET, a third MOSFET, and a fourth MOSFET; the at least four diodes comprise a first diode, a second diode, a third diode, and a fourth diode; the first contact pair is connected to an anode of the first diode, and is connected to a first end of the first MOSFET; the second contact pair is connected to a cathode of the second diode, and is connected to a first end of the second MOSFET; the third contact pair is connected to a cathode of the third diode, and is connected to a first end of the third MOSFET; the fourth contact pair is connected to an anode of the fourth diode, and is connected to a first end of the fourth MOSFET; a power input positive electrode of the PD circuit is connected to a cathode of the first diode, is connected to a second end of the second MOSFET, is connected to a second end of the third MOSFET, and is connected to a cathode of the fourth diode; and a power input negative electrode of the PD circuit is connected to a second end of the first MOSFET, is connected to an anode of the second diode, is connected to an anode of the third diode, and is connected to a second end of the fourth MOSFET; wherein, a gate electrode of the first MOSFET is connected to the second contact pair; a gate electrode of the second MOSFET is connected to the first contact pair; a gate electrode of the third MOSFET is connected to the fourth contact pair; and a gate electrode of the fourth MOSFET is connected to the third contact pair.