An organic light emitting display device comprising: a first emission area comprising a first organic light emitting diode; a second emission area arranged adjacent to the first emission area and not overlapping with the first emission area, the second emission area comprising a second organic light emitting diode; a pixel circuit unit (PC1, PC2) electrically connected to the first organic light emitting diode and the second organic light emitting diode; a transmissive area adjacent to the first and second emission areas and not overlapping with the first and second emission areas, the transmissive area configured to transmit external light therethrough, a data line, scan line, and a power supply source line for supplying a data signal, a scan signal, and power to the pixel circuit unit, respectively, wherein the pixel circuit unit comprises: a first light emission signal thin film transistor electrically connected to the first organic light emitting diode; a second light emission signal thin film transistor electrically connected to the second organic light emitting diode; and a first thin film transistor, Tr,a second thin film transistor, and a capacitor (Cst); wherein, in the first thin film transistor, a gate electrode is electrically connected to the scan line, a first electrode is electrically connected to the data line, and a second electrode is electrically connected to a gate electrode of the second thin film transistor and the capacitor, and wherein, in the second thin film transistor, a first electrode is electrically connected to the power supply source line and the capacitor, and a second electrode is electrically connected to the first and second light emission signal thin film transistors, characterised in that the pixel circuit unit is arranged to overlap with the first emission area and not to overlap with the second emission area; wherein the first and second thin film transistors and the first and second light emission signal thin film transistors are p-type type transistors, and wherein a gate electrode of the first light emission signal thin film transistor and a gate electrode of the second light emission signal thin film transistor are electrically connected to emission signal lines, respectively. a first emission area comprising a first organic light emitting diode; a second emission area arranged adjacent to the first emission area and not overlapping with the first emission area, the second emission area comprising a second organic light emitting diode; a pixel circuit unit (PC1, PC2) electrically connected to the first organic light emitting diode and the second organic light emitting diode; a transmissive area adjacent to the first and second emission areas and not overlapping with the first and second emission areas, the transmissive area configured to transmit external light therethrough, a data line, scan line, and a power supply source line for supplying a data signal, a scan signal, and power to the pixel circuit unit, respectively, wherein the pixel circuit unit comprises: a first light emission signal thin film transistor electrically connected to the first organic light emitting diode; a second light emission signal thin film transistor electrically connected to the second organic light emitting diode; and a first thin film transistor, Tr,a second thin film transistor, and a capacitor (Cst); a first light emission signal thin film transistor electrically connected to the first organic light emitting diode; a second light emission signal thin film transistor electrically connected to the second organic light emitting diode; and a first thin film transistor, Tr,a second thin film transistor, and a capacitor (Cst); wherein, in the first thin film transistor, a gate electrode is electrically connected to the scan line, a first electrode is electrically connected to the data line, and a second electrode is electrically connected to a gate electrode of the second thin film transistor and the capacitor, and wherein, in the second thin film transistor, a first electrode is electrically connected to the power supply source line and the capacitor, and a second electrode is electrically connected to the first and second light emission signal thin film transistors, characterised in that the pixel circuit unit is arranged to overlap with the first emission area and not to overlap with the second emission area; wherein the first and second thin film transistors and the first and second light emission signal thin film transistors are p-type type transistors, and wherein a gate electrode of the first light emission signal thin film transistor and a gate electrode of the second light emission signal thin film transistor are electrically connected to emission signal lines, respectively.