A method for manufacturing a single crystal silicon solar cell; the single crystal silicon solar cell comprising a stack having at least a light-reflecting film, a single crystal silicon layer serving as a light-converting film, and a transparent insulator substrate; and a surface of the side of the transparent insulator substrate being a light-receiving surface; the method comprising at least the steps of: preparing a transparent insulator substrate and a single crystal silicon substrate of a first conductivity type; implanting at least either hydrogen ions or rare-gas ions into the single crystal silicon substrate to form an ion-implanted layer; bringing the ion-implanted surface of the single crystal silicon substrate in close contact with the transparent insulator substrate via a transparent adhesive; curing the transparent adhesive to form a transparent adhesive layer, and simultaneously, bonding the single crystal silicon substrate and the transparent insulator substrate; applying an impact to the ion-implanted layer to mechanically delaminate the single crystal silicon substrate, thereby forming a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type different from the first conductivity type in the delaminated surface side of the single crystal silicon layer to form a plurality of pn junctions at least in a plane direction of the single crystal silicon layer, and simultaneously, causing a plurality of areas of the first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of first individual electrodes on each one of the plurality of areas of the first conductivity type, and forming each of a plurality of second individual electrodes on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a first collector electrode for connecting the plurality of first individual electrodes, and a second collector electrode for connecting the plurality of second individual electrodes; and forming a light-reflecting film for covering the plurality of areas of the first conductivity type and the plurality of areas of the second conductivity type. preparing a transparent insulator substrate and a single crystal silicon substrate of a first conductivity type; implanting at least either hydrogen ions or rare-gas ions into the single crystal silicon substrate to form an ion-implanted layer; bringing the ion-implanted surface of the single crystal silicon substrate in close contact with the transparent insulator substrate via a transparent adhesive; curing the transparent adhesive to form a transparent adhesive layer, and simultaneously, bonding the single crystal silicon substrate and the transparent insulator substrate; applying an impact to the ion-implanted layer to mechanically delaminate the single crystal silicon substrate, thereby forming a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type different from the first conductivity type in the delaminated surface side of the single crystal silicon layer to form a plurality of pn junctions at least in a plane direction of the single crystal silicon layer, and simultaneously, causing a plurality of areas of the first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of first individual electrodes on each one of the plurality of areas of the first conductivity type, and forming each of a plurality of second individual electrodes on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a first collector electrode for connecting the plurality of first individual electrodes, and a second collector electrode for connecting the plurality of second individual electrodes; and forming a light-reflecting film for covering the plurality of areas of the first conductivity type and the plurality of areas of the second conductivity type.