A surface-coated cutting tool comprising a base material and a coating formed on said base material, said coating including a hard layer, said hard layer including a plurality of crystal grains having a sodium chloride-type crystal structure, wherein said crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al x Ti 1-x and a second layer composed of nitride or carbonitride of Al y Ti 1-y are alternately stacked, wherein x≠y, wherein 0.6 ≤ x < 1, wherein 0.45 ≤ y < 0.6, and wherein 0.05 ≤ x-y < 0.5; a total thickness of said first layer and said second layer adjacent to each other is 3 nm or more and 40 nm or less, when the composition of the first layer is nitride, the composition of the second layer is also nitride, and when the composition of the first layer is carbonitride, the composition of the second layer is also carbonitride, and when crystal orientation of each of said plurality of crystal grains is analyzed using an electron backscatter diffraction system for a plane of said hard layer that is parallel to a surface of said base material to measure an angle of intersection between a normal direction to plane that is a crystal plane of said crystal grain and a normal direction to the surface of said base material, an area ratio of said crystal grains having said angle of intersection of 0 degree or more to less than 10 degrees is 40% or more, wherein said plane of said hard layer is obtained by removing the hard layer positioned at a region with a thickness of 0.1 to 0.5 μm in the depth direction from a surface on the opposite side to a surface positioned on said base material side; wherein boundaries of said crystal grains include CSL boundaries and general boundaries, and the length of Σ3 grain boundaries of said CSL boundaries is determined using EBSD by the method described in the description and is less than 50% of the length of Σ3-29 grain boundaries that is a sum of respective lengths of Σ3 grain boundaries, Σ5 grain boundaries, Σ7 grain boundaries, Σ9 grain boundaries, Σ11 grain boundaries, Σ13 grain boundaries, Σ15 grain boundaries, Σ17 grain boundaries, Σ19 grain boundaries, Σ21 grain boundaries, Σ23 grain boundaries, Σ25 grain boundaries, Σ27 grain boundaries, and Σ29 grain boundaries included in said CSL boundaries; wherein 70% or more by area of the total area occupied by crystal grains observed in a captured image are crystal grains having a grain diameter of 0.5 μm or less and said grain diameter of the crystal grain in said hard layer is determined by the method described in the description; and said hard layer has a thickness of 1 μm or more and 15 μm or less. said coating including a hard layer, said hard layer including a plurality of crystal grains having a sodium chloride-type crystal structure, wherein said crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al x Ti 1-x and a second layer composed of nitride or carbonitride of Al y Ti 1-y are alternately stacked, wherein x≠y, wherein 0.6 ≤ x < 1, wherein 0.45 ≤ y < 0.6, and wherein 0.05 ≤ x-y < 0.5; a total thickness of said first layer and said second layer adjacent to each other is 3 nm or more and 40 nm or less, when the composition of the first layer is nitride, the composition of the second layer is also nitride, and when the composition of the first layer is carbonitride, the composition of the second layer is also carbonitride, and when crystal orientation of each of said plurality of crystal grains is analyzed using an electron backscatter diffraction system for a plane of said hard layer that is parallel to a surface of said base material to measure an angle of intersection between a normal direction to plane that is a crystal plane of said crystal grain and a normal direction to the surface of said base material, an area ratio of said crystal grains having said angle of intersection of 0 degree or more to less than 10 degrees is 40% or more, wherein said plane of said hard layer is obtained by removing the hard layer positioned at a region with a thickness of 0.1 to 0.5 μm in the depth direction from a surface on the opposite side to a surface positioned on said base material side; wherein boundaries of said crystal grains include CSL boundaries and general boundaries, and the length of Σ3 grain boundaries of said CSL boundaries is determined using EBSD by the method described in the description and is less than 50% of the length of Σ3-29 grain boundaries that is a sum of respective lengths of Σ3 grain boundaries, Σ5 grain boundaries, Σ7 grain boundaries, Σ9 grain boundaries, Σ11 grain boundaries, Σ13 grain boundaries, Σ15 grain boundaries, Σ17 grain boundaries, Σ19 grain boundaries, Σ21 grain boundaries, Σ23 grain boundaries, Σ25 grain boundaries, Σ27 grain boundaries, and Σ29 grain boundaries included in said CSL boundaries; wherein 70% or more by area of the total area occupied by crystal grains observed in a captured image are crystal grains having a grain diameter of 0.5 μm or less and said grain diameter of the crystal grain in said hard layer is determined by the method described in the description; and