An electronic circuit breaker, ECB, circuit comprising: a sense field effect transistor, FET, (MPWR) having a drain and a source coupled in between an input and an output of the ECB, wherein the sense FET is disposed in a first voltage domain of the ECB; a reference FET (MREF) disposed in a second voltage domain of the ECB, wherein the reference FET is configured to conduct a reference current (IREF) between a drain and a source of the reference FET; and a sensing circuitry disposed in the first voltage domain and in the second voltage domain, wherein the sensing circuitry includes: a switched capacitor circuit configured to sample a drain-to-source voltage, Vds, of the sense FET, the switched capacitor circuit comprising a first isolation capacitor and a second isolation capacitor, wherein the first isolation capacitor and the second isolation capacitor are arranged to isolate the second voltage domain from the first voltage domain and comprise, respectively, a first terminal disposed in the first voltage domain and a second terminal disposed in the second voltage domain, and a comparison circuitry disposed in the second voltage domain comprising a first input terminal and a second input terminal and configured to determine if the sampled Vds of the sense FET is greater than or less than a Vds of the reference FET in order to determine if a drain-source current of the sense FET is greater than or less than a specified current, wherein the first and second input terminals of the comparison circuitry are coupled to the second terminal of the first isolation capacitor, to the second terminal of the second isolation capacitor, and to the drain and source source of the reference FET (MREF). a sense field effect transistor, FET, (MPWR) having a drain and a source coupled in between an input and an output of the ECB, wherein the sense FET is disposed in a first voltage domain of the ECB; a reference FET (MREF) disposed in a second voltage domain of the ECB, wherein the reference FET is configured to conduct a reference current (IREF) between a drain and a source of the reference FET; and a sensing circuitry disposed in the first voltage domain and in the second voltage domain, wherein the sensing circuitry includes: a switched capacitor circuit configured to sample a drain-to-source voltage, Vds, of the sense FET, the switched capacitor circuit comprising a first isolation capacitor and a second isolation capacitor, wherein the first isolation capacitor and the second isolation capacitor are arranged to isolate the second voltage domain from the first voltage domain and comprise, respectively, a first terminal disposed in the first voltage domain and a second terminal disposed in the second voltage domain, and a comparison circuitry disposed in the second voltage domain comprising a first input terminal and a second input terminal and configured to determine if the sampled Vds of the sense FET is greater than or less than a Vds of the reference FET in order to determine if a drain-source current of the sense FET is greater than or less than a specified current, wherein the first and second input terminals of the comparison circuitry are coupled to the second terminal of the first isolation capacitor, to the second terminal of the second isolation capacitor, and to the drain and source source of the reference FET (MREF). a switched capacitor circuit configured to sample a drain-to-source voltage, Vds, of the sense FET, the switched capacitor circuit comprising a first isolation capacitor and a second isolation capacitor, wherein the first isolation capacitor and the second isolation capacitor are arranged to isolate the second voltage domain from the first voltage domain and comprise, respectively, a first terminal disposed in the first voltage domain and a second terminal disposed in the second voltage domain, and a comparison circuitry disposed in the second voltage domain comprising a first input terminal and a second input terminal and configured to determine if the sampled Vds of the sense FET is greater than or less than a Vds of the reference FET in order to determine if a drain-source current of the sense FET is greater than or less than a specified current, wherein the first and second input terminals of the comparison circuitry are coupled to the second terminal of the first isolation capacitor, to the second terminal of the second isolation capacitor, and to the drain and source source of the reference FET (MREF).