A detector device assisted by majority current for detecting an electromagnetic radiation comprising: - a semiconductor layer on which an electromagnetic radiation can impinge for generating therein pairs of majority and minority carriers and which is doped with a dopant of a first conductivity type; - at least two control regions (100, 115) formed in the semiconductor layer, being doped with a dopant of the first conductivity type; - a first source, being a voltage or current source, for generating at least one first majority carrier current in the semiconductor layer between said two control regions (100, 115), the first majority carrier current being associated with a respective first electrical field; - at least one detection region (101, 116) formed in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction and collecting generated minority carriers, the minority carriers being directed towards the detection region (101, 116) under the influence of the first electrical field respectively associated with the at least one first majority carrier current; - isolation means (103, 1001, 1002), formed in the semiconductor layer and located between said two control regions (100, 115), for deflecting the first majority carrier current generated by the first source between said two control regions (100, 115); the detector device being characterized in that: - it further comprises a plurality of adjacent taps respectively associated with a plurality of said isolation means (103, 1001, 1002), each of which is located between two adjacent taps, the isolation means being configured for deflecting a plurality of associated first majority carrier currents, each tap comprising at least one detection region and at least one control region; and - it further comprises control circuitry arranged for controlling the first source and controlling separately said first majority carrier currents deflected by the plurality of said isolation means (103, 1001, 1002). - a semiconductor layer on which an electromagnetic radiation can impinge for generating therein pairs of majority and minority carriers and which is doped with a dopant of a first conductivity type; - at least two control regions (100, 115) formed in the semiconductor layer, being doped with a dopant of the first conductivity type; - a first source, being a voltage or current source, for generating at least one first majority carrier current in the semiconductor layer between said two control regions (100, 115), the first majority carrier current being associated with a respective first electrical field; - at least one detection region (101, 116) formed in the semiconductor layer and being doped with a dopant of a second conductivity type opposite to the first conductivity type, for forming a junction and collecting generated minority carriers, the minority carriers being directed towards the detection region (101, 116) under the influence of the first electrical field respectively associated with the at least one first majority carrier current; - isolation means (103, 1001, 1002), formed in the semiconductor layer and located between said two control regions (100, 115), for deflecting the first majority carrier current generated by the first source between said two control regions (100, 115); the detector device being characterized in that: - it further comprises a plurality of adjacent taps respectively associated with a plurality of said isolation means (103, 1001, 1002), each of which is located between two adjacent taps, the isolation means being configured for deflecting a plurality of associated first majority carrier currents, each tap comprising at least one detection region and at least one control region; and - it further comprises control circuitry arranged for controlling the first source and controlling separately said first majority carrier currents deflected by the plurality of said isolation means (103, 1001, 1002).