A semiconductor package assembly, comprising: a substrate having a die-attach surface and a solder-ball-attach surface opposite to the die-attach surface; a semiconductor die mounted on the die-attach surface of the substrate, wherein the semiconductor die comprises: an integrated RF digital and analog circuit; a radio-frequency circuit; and an RF input/output pad (306; 308) electrically connected to the RF circuit; a base comprising discrete pads including an RF pad on a surface thereof, the solder-ball-attach-surface of the substrate being mounted on the corresponding pads on the base through a plurality of conductive structures; a first inductor structure on the substrate, or the base, wherein the first inductor structure comprises: a first terminal electrically connected to the RF input/output pad (306; 308); a second terminal electrically connected to a ground terminal, wherein a first conductive path (370B, 370C) is formed by the first inductor structure electrically coupled between the RF input/output pad (306; 308) of the semiconductor die and the ground terminal, wherein the base further comprises an off-die component circuit electrically connected to the semiconductor die through the RF pad, the off-die component circuit comprising a matching circuit comprising a second inductor structure and at least one capacitor electrically connected to the second inductor structure, a filter and an antenna; and a second conductive path extends from the RF input/output pad (306,308) of the semiconductor die to the antenna wherein the first inductor structure and the second inductor structure are discrete inductor structures such that the antenna mounted on the base is electrically connected to the pad of the semiconductor die without passing through the first inductor structure, whereby the first conductive path (370B, 370C) is shunt with the second conductive path and shorter than the second conductive path. a substrate having a die-attach surface and a solder-ball-attach surface opposite to the die-attach surface; a semiconductor die mounted on the die-attach surface of the substrate, wherein the semiconductor die comprises: an integrated RF digital and analog circuit; a radio-frequency circuit; and an RF input/output pad (306; 308) electrically connected to the RF circuit; a base comprising discrete pads including an RF pad on a surface thereof, the solder-ball-attach-surface of the substrate being mounted on the corresponding pads on the base through a plurality of conductive structures; a first inductor structure on the substrate, or the base, wherein the first inductor structure comprises: an integrated RF digital and analog circuit; a radio-frequency circuit; and an RF input/output pad (306; 308) electrically connected to the RF circuit; a base comprising discrete pads including an RF pad on a surface thereof, the solder-ball-attach-surface of the substrate being mounted on the corresponding pads on the base through a plurality of conductive structures; a first inductor structure on the substrate, or the base, wherein the first inductor structure comprises: a first terminal electrically connected to the RF input/output pad (306; 308); a second terminal electrically connected to a ground terminal, wherein a first conductive path (370B, 370C) is formed by the first inductor structure electrically coupled between the RF input/output pad (306; 308) of the semiconductor die and the ground terminal, wherein the base further comprises an off-die component circuit electrically connected to the semiconductor die through the RF pad, the off-die component circuit comprising a matching circuit comprising a second inductor structure and at least one capacitor electrically connected to the second inductor structure, a filter and an antenna; and a second conductive path extends from the RF input/output pad (306,308) of the semiconductor die to the antenna wherein the first inductor structure and the second inductor structure are discrete inductor structures such that the antenna mounted on the base is electrically connected to the pad of the semiconductor die without passing through the first inductor structure, whereby the first conductive path (370B, 370C) is shunt with the second conductive path and shorter than the second conductive path.