An electronic assembly, comprising: a first electronic component, wherein a first active surface (a) of the first electronic component has at least one first solder pad; a second electronic component, wherein a second active surface (b) of the second electronic component has at least one second solder pad, and the second active surface faces the first active surface; and at least one first soldering portion, wherein one first soldering portion is located between one first solder pad and one second solder pad, and the first soldering portion is bonded to the first solder pad and the second solder pad on both sides of the first soldering portion, wherein the first soldering portion comprises a high-temperature solder layer and a low-temperature solder layer, the high-temperature solder layer is disposed close to the first solder pad and is bonded to the first solder pad, and the low-temperature solder layer is disposed close to the second solder pad and is bonded to the second solder pad; and the electronic assembly further comprising: at least one second soldering portion, wherein the second soldering portion is disposed on a side of the first soldering portion close to the second solder pad, and is bonded to the second solder pad; and a melting point of the low-temperature solder layer is lower than that of the high-temperature solder layer and than that of the second soldering portion, and a material constituting the low-temperature solder layer is partially the same as that constituting the high-temperature solder layer and the second soldering portion, so that the low-temperature solder layer is bonded to the high-temperature solder layer and the second soldering portion through atomic diffusion, characterised in that the high-temperature solder layer or the second soldering portion has a thickness of 10-100 μm in a direction perpendicular to the first solder pad. a first electronic component, wherein a first active surface (a) of the first electronic component has at least one first solder pad; a second electronic component, wherein a second active surface (b) of the second electronic component has at least one second solder pad, and the second active surface faces the first active surface; and at least one first soldering portion, wherein one first soldering portion is located between one first solder pad and one second solder pad, and the first soldering portion is bonded to the first solder pad and the second solder pad on both sides of the first soldering portion, wherein the first soldering portion comprises a high-temperature solder layer and a low-temperature solder layer, the high-temperature solder layer is disposed close to the first solder pad and is bonded to the first solder pad, and the low-temperature solder layer is disposed close to the second solder pad and is bonded to the second solder pad; and the electronic assembly further comprising: at least one second soldering portion, wherein the second soldering portion is disposed on a side of the first soldering portion close to the second solder pad, and is bonded to the second solder pad; and a melting point of the low-temperature solder layer is lower than that of the high-temperature solder layer and than that of the second soldering portion, and a material constituting the low-temperature solder layer is partially the same as that constituting the high-temperature solder layer and the second soldering portion, so that the low-temperature solder layer is bonded to the high-temperature solder layer and the second soldering portion through atomic diffusion, characterised in that the high-temperature solder layer or the second soldering portion has a thickness of 10-100 μm in a direction perpendicular to the first solder pad. at least one second soldering portion, wherein the second soldering portion is disposed on a side of the first soldering portion close to the second solder pad, and is bonded to the second solder pad; and a melting point of the low-temperature solder layer is lower than that of the high-temperature solder layer and than that of the second soldering portion, and a material constituting the low-temperature solder layer is partially the same as that constituting the high-temperature solder layer and the second soldering portion, so that the low-temperature solder layer is bonded to the high-temperature solder layer and the second soldering portion through atomic diffusion, characterised in that the high-temperature solder layer or the second soldering portion has a thickness of 10-100 μm in a direction perpendicular to the first solder pad.