mhurhangee/ep-ind-claims huggingface dataset:
A hearing device comprising • an input unit for providing first and second electric input signals ( I 1, I 2) representing sound signals, • a beamformer filter for making frequency-dependent directional filtering of the electric input signals ( I 1, I 2), the output of said beamformer filter providing a resulting beamformed output signal (RBFS), the beamformer filter comprising ∘ a directional unit for providing respective first and second beamformed signals ( ID 1, ID 2) from weighted combinations of the electric input signals ( I 1, I 2) wherein the first and second beamformed signals ( ID 1, ID 2) are an omni-directional signal and a directional signal with a maximum gain in a rear direction, respectively, a rear direction being defined relative to a target sound source, • an equalization unit for equalizing a phase of at least one of the beamformed signals ( ID 1, ID 2) and providing first and second equalized beamformed signals ( IDE 1, IDE 2), and • a beamformer output unit for providing the resulting beamformed output signal (RBFS) from the first and second equalized beamformed signals ( IDE 1, IDE 2), CHARACTERIZED IN THAT • the equalization unit is configured to compensate the beamformed signals ( ID 1, ID 2) for phase differences imposed by the directional unit in that it comprises an integrator and applies an inverse transfer function based on the first and/or second beamformed signals. • an input unit for providing first and second electric input signals ( I 1, I 2) representing sound signals, • a beamformer filter for making frequency-dependent directional filtering of the electric input signals ( I 1, I 2), the output of said beamformer filter providing a resulting beamformed output signal (RBFS), the beamformer filter comprising ∘ a directional unit for providing respective first and second beamformed signals ( ID 1, ID 2) from weighted combinations of the electric input signals ( I 1, I 2) wherein the first and second beamformed signals ( ID 1, ID 2) are an omni-directional signal and a directional signal with a maximum gain in a rear direction, respectively, a rear direction being defined relative to a target sound source, • an equalization unit for equalizing a phase of at least one of the beamformed signals ( ID 1, ID 2) and providing first and second equalized beamformed signals ( IDE 1, IDE 2), and • a beamformer output unit for providing the resulting beamformed output signal (RBFS) from the first and second equalized beamformed signals ( IDE 1, IDE 2), CHARACTERIZED IN THAT • the equalization unit is configured to compensate the beamformed signals ( ID 1, ID 2) for phase differences imposed by the directional unit in that it comprises an integrator and applies an inverse transfer function based on the first and/or second beamformed signals.
A system for the trenchless installation of a pipe in a wall opening, having a pipe for inserting into the wall opening, a space generating device (16; 50, 55; 50, 90; 50, 100) for generating a chambered space between the pipe and the wall opening, expanding injection resin with an expansion volume of 3.0 to 5.0: 1 in the chambered space for introducing into the chambered space generated by the space generating device (16; 50, 55; 50, 90; 50, 100), and a filling pipe for filling the chambered space generated by the space generating device (16; 50, 55; 50, 90; 50, 100) with the expanding injection resin and for inserting into the space generating device (16; 50, 55; 50, 90; 50, 100), characterised in that the space generating device comprises a pipe collar for attaching to the pipe before the pipe is inserted into the wall opening and for introducing between the wall opening and the pipe, wherein the pipe collar has a flexible tubular body which has a plurality of annular bulges (110, 120, 130) which have different widths.
A wave power converter including: - a wave power converter housing with a bottom and a top between which there is a distance limiting structure, and through which there is a central axis and entirely or partially outside the wave power converter housing - at least one paddle having a longitudinal direction of a first generatrix and a lower end and an upper end, and which via a first connection is connected with - a first power converter with a rotary axis at an angle to the central axis and fastened to the wave power converter housing at the top; wherein the first power converter interacts via at least one piston rod with at least one second power converter as a first end of the piston rod is fastened via a flexible joint to the first power converter, and as a second end of the piston rod has a piston adapted for a linear movement along a second generatrix in the at least one second power converter, which includes a linear chamber surrounded by a chamber casing, characterised in that the chamber casing has a rotatable and pivotable connection (36, 37, 38) to the wave power converter housing at the bottom in continuation of the second generatrix and that the first power converter is a crank. - a wave power converter housing with a bottom and a top between which there is a distance limiting structure, and through which there is a central axis and entirely or partially outside the wave power converter housing - at least one paddle having a longitudinal direction of a first generatrix and a lower end and an upper end, and which via a first connection is connected with - a first power converter with a rotary axis at an angle to the central axis and fastened to the wave power converter housing at the top;
A printing apparatus comprising a printing section configured to print a conductive ink (Ka, Kb) on a surface of a substrate, wherein the printing section prints first conductive ink (Ka) containing a first conductive material (Da) on the substrate by offset printing and second conductive ink (Kb) containing a second conductive material (Db) that is different from the first conductive material (Da) on the first conductive ink by offset printing to form an electrode extending in a predetermined direction, and the printing section includes: a first printing machine configured to perform offset printing with the first conductive ink; and a second printing machine configured to perform offset printing with the second conductive, characterized in that the second conductive material does not contain the first conductive material. a first printing machine configured to perform offset printing with the first conductive ink; and a second printing machine configured to perform offset printing with the second conductive, characterized in that the second conductive material does not contain the first conductive material.
Radar beam deflection unit for a radar level indicator, comprising an antenna array for the controlled deflection of a main radiation direction of the antenna arrangement of a transmission signal from the radar level indicator, comprising: a first prism for deflecting the main radiation direction of the transmission signal; a first drive for rotating the first prism about a first axis of rotation so that the main radiation direction of the transmission signal follows a closed path after passing through the first prism; a second prism for deflecting the main radiation direction of the transmission signal; a second drive for rotating the second prism about a second axis of rotation so that the main radiation direction of the transmission signal follows a closed path after passing through the second prism; wherein the ratio of the rotation frequency of the first prism with respect to the rotation frequency of the second prism is adjusted. a first prism for deflecting the main radiation direction of the transmission signal; a first drive for rotating the first prism about a first axis of rotation so that the main radiation direction of the transmission signal follows a closed path after passing through the first prism; a second prism for deflecting the main radiation direction of the transmission signal; a second drive for rotating the second prism about a second axis of rotation so that the main radiation direction of the transmission signal follows a closed path after passing through the second prism; wherein the ratio of the rotation frequency of the first prism with respect to the rotation frequency of the second prism is adjusted.
A quenched steel sheet consisting of, by wt%, carbon: 0.05% to 0.25%, silicon (Si): 0.5% or less with the exception of 0, manganese (Mn): 0.1% to 2.0%, phosphorus: 0.05% or less, sulfur: 0.03% or less, and the balance of iron (Fe) and other unavoidable impurities, wherein the quenched steel sheet includes 90 volume% or more of martensite having a first hardness and martensite having a second hardness as a microstructure of the steel sheet, wherein the first hardness has a greater hardness value than a hardness value of the second hardness, and a ratio of a difference between the first hardness and the second hardness and the first hardness satisfies relational expression 1, 5 ≤ first hardness − second hardness / first hardness * 100 ≤ 30., and wherein an average packet size of the martensite having the first hardness and the martensite having the second hardness is 20 μm or less.
Hose having a tubular hose wall, and at least one sensor line, wherein the hose wall has an elastomeric base material with an embedded reinforcing support, wherein each sensor line is embedded in the base material of the hose wall so as to capture damage and/or wear and tear to a shell inner side of the hose wall, and wherein each sensor line is respectively formed by a helically wound metal wire or by a metal mesh strip, wherein a winding diameter W of each helically wound metal wire is smaller than a wall thickness Z of the hose wall, or a width B of each metal mesh strip is smaller than a half or quarter of the circumference of the hose wall. a tubular hose wall, and at least one sensor line, wherein the hose wall has an elastomeric base material with an embedded reinforcing support, wherein each sensor line is embedded in the base material of the hose wall so as to capture damage and/or wear and tear to a shell inner side of the hose wall, and wherein each sensor line is respectively formed by a helically wound metal wire or by a metal mesh strip, wherein a winding diameter W of each helically wound metal wire is smaller than a wall thickness Z of the hose wall, or a width B of each metal mesh strip is smaller than a half or quarter of the circumference of the hose wall.
A method for fabricating a back-illuminated image sensor that includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer, wherein a frontside of the sensor layer is adjacent to the circuit layer and a backside of the sensor layer is adjacent to the insulating layer, the back-illuminated image sensor further including an imaging area comprising a plurality of photodetectors doped with a p-type dopant and disposed in the sensor layer adjacent to the frontside of the sensor layer; characterised in that the method comprises: before forming the circuit layer on the sensor layer, implanting the sensor layer with an n-type dopant from the frontside of and through the sensor layer to form a well (800, 1202) in at least a portion of the sensor layer adjacent to the backside of the sensor layer, wherein the well (800, 1202) spans the imaging area; doping the implanted sensor layer with a p-type dopant to form the plurality of photodetectors adjacent to the frontside of the sensor layer; diffusing the n-type dopant and the p-type dopant during thermal oxidation of STI regions, thereby causing, due to segregation, the n-type dopant to accumulate on the sensor layer side of an interface between the backside of the sensor layer and the insulating layer and the p-type dopant to diminish on the sensor layer side of an interface between the backside of the sensor layer and the insulating layer. before forming the circuit layer on the sensor layer, implanting the sensor layer with an n-type dopant from the frontside of and through the sensor layer to form a well (800, 1202) in at least a portion of the sensor layer adjacent to the backside of the sensor layer, wherein the well (800, 1202) spans the imaging area; doping the implanted sensor layer with a p-type dopant to form the plurality of photodetectors adjacent to the frontside of the sensor layer; diffusing the n-type dopant and the p-type dopant during thermal oxidation of STI regions, thereby causing, due to segregation, the n-type dopant to accumulate on the sensor layer side of an interface between the backside of the sensor layer and the insulating layer and the p-type dopant to diminish on the sensor layer side of an interface between the backside of the sensor layer and the insulating layer.
Detachable modular sofa comprising a platform, seats and shaping elements, which shaping elements are backrests and armrests, characterised because it comprises: a structure configured by means of main bars that extend by means of support bars and anchoring legs and reinforcing rods, the support bars being perpendicular to the main bars and the anchoring legs, a base board intended to be fastened to the structure, wherein, the anchoring legs are configured to be anchored in drill holes located in the base board; the support bars are intended to rest on the base board; each of the shaping elements comprises a groove intended to house the structure; so that: the sofa is formed by inserting the anchoring legs of the structure into the drill holes of the base board until the support bars rest thereon and, subsequently, by inserting the structure into the shaping element to insert the assembly into holes of the platform, and the fastening of the structure to the base board by means of support bars is configured to stiffen the joint between the shaping element and the platform when a user exerts pressure on it. a structure configured by means of main bars that extend by means of support bars and anchoring legs and reinforcing rods, the support bars being perpendicular to the main bars and the anchoring legs, a base board intended to be fastened to the structure, wherein, the anchoring legs are configured to be anchored in drill holes located in the base board; the support bars are intended to rest on the base board; each of the shaping elements comprises a groove intended to house the structure; the sofa is formed by inserting the anchoring legs of the structure into the drill holes of the base board until the support bars rest thereon and, subsequently, by inserting the structure into the shaping element to insert the assembly into holes of the platform, and the fastening of the structure to the base board by means of support bars is configured to stiffen the joint between the shaping element and the platform when a user exerts pressure on it.
A method for manufacturing a semiconductor device, the method comprising: a providing step of providing a semiconductor wafer having a front surface including a front surface shape that is formed by a surface structure including a mark, which is formed on the front surface of the semiconductor wafer, for positioning the semiconductor wafer; an attachment step of attaching a supporting substrate to the front surface of the semiconductor wafer using an adhesive, wherein the supporting substrate and the adhesive have such transparency that the front surface of the semiconductor wafer is seen; an applying step of applying a resist onto the rear surface of a semiconductor wafer; a photomask fixing step of fixing a position of a photomask above a stage so as to be aligned with a position of a camera below the stage; a mounting step of mounting the semiconductor wafer on the stage, with the supporting substrate down; a positioning step of detecting the mark with the camera and positioning the semiconductor wafer on the basis of the mark so as to be aligned with the position of the camera, so that the semiconductor wafer and the photomask are aligned with each other; a patterning step of patterning the resist through the photomask in alignment with said surface structure; and a forming step of forming a circuit pattern in the rear surface of a semiconductor wafer using the patterned resist as a mask. a providing step of providing a semiconductor wafer having a front surface including a front surface shape that is formed by a surface structure including a mark, which is formed on the front surface of the semiconductor wafer, for positioning the semiconductor wafer; an attachment step of attaching a supporting substrate to the front surface of the semiconductor wafer using an adhesive, wherein the supporting substrate and the adhesive have such transparency that the front surface of the semiconductor wafer is seen; an applying step of applying a resist onto the rear surface of a semiconductor wafer; a photomask fixing step of fixing a position of a photomask above a stage so as to be aligned with a position of a camera below the stage; a mounting step of mounting the semiconductor wafer on the stage, with the supporting substrate down; a positioning step of detecting the mark with the camera and positioning the semiconductor wafer on the basis of the mark so as to be aligned with the position of the camera, so that the semiconductor wafer and the photomask are aligned with each other; a patterning step of patterning the resist through the photomask in alignment with said surface structure; and a forming step of forming a circuit pattern in the rear surface of a semiconductor wafer using the patterned resist as a mask.
A vapour generating device arranged to receive solid vapour generating material, the device comprising: a vapour generating chamber arranged to contain the solid vapour generating material; a closure arranged to seal the vapour generating chamber; and a first passageway arranged between the exterior of the vapour generating device and the vapour generating chamber, such that the passageway allows air to enter the vapour generating chamber; wherein: the vapour generating chamber comprises a first wall and the first passageway is arranged to extend through the first wall and surround at least part of the first wall; or the vapour generating chamber comprises a side wall arranged to define the first passageway between the closure and the side wall; or the vapour generating chamber comprises a side wall and the first passageway is arranged to surround the vapour generating chamber at a base of the side wall; characterised in that the closure is pivotally attached to the vapour generating device. a vapour generating chamber arranged to contain the solid vapour generating material; a closure arranged to seal the vapour generating chamber; and a first passageway arranged between the exterior of the vapour generating device and the vapour generating chamber, such that the passageway allows air to enter the vapour generating chamber; wherein: the vapour generating chamber comprises a first wall and the first passageway is arranged to extend through the first wall and surround at least part of the first wall; or the vapour generating chamber comprises a side wall arranged to define the first passageway between the closure and the side wall; or the vapour generating chamber comprises a side wall and the first passageway is arranged to surround the vapour generating chamber at a base of the side wall; characterised in that the closure is pivotally attached to the vapour generating device. the vapour generating chamber comprises a first wall and the first passageway is arranged to extend through the first wall and surround at least part of the first wall; or the vapour generating chamber comprises a side wall arranged to define the first passageway between the closure and the side wall; or the vapour generating chamber comprises a side wall and the first passageway is arranged to surround the vapour generating chamber at a base of the side wall; characterised in that the closure is pivotally attached to the vapour generating device.
A method for start-up and operation of a Fischer-Tropsch reactor comprising the steps of: (a) providing a reactor with a fixed bed of reduced Fischer-Tropsch catalyst that comprises cobalt as catalytically active metal; (b) supplying a gaseous feed stream comprising carbon monoxide and hydrogen to the reactor, wherein the gaseous feed stream initially comprises a nitrogen-containing compound other than molecular nitrogen in an initial concentration in the range of from 0.1 to 50 ppmv based on the volume of the gaseous feed stream; (c) converting carbon monoxide and hydrogen supplied with the gaseous feed stream to the reactor into hydrocarbons at an initial reaction temperature, wherein the initial reaction temperature is set at a value of at least 200 °C and hydrocarbons are produced at a first yield; (d) maintaining the initial reaction temperature at the set value and maintaining the first yield by decreasing the concentration of the nitrogen-containing compound in the gaseous feed stream supplied to the reactor wherein the concentration of the nitrogen-containing compound is gradually decreased, gradually meaning a continuous decrease or a stepwise decrease, in at least two steps, of the concentration; (e) optionally increasing the reaction temperature after the concentration of the nitrogen-containing compound in the gaseous feed stream has decreased to a value below 100 ppbv, preferably below 10 ppbv. (a) providing a reactor with a fixed bed of reduced Fischer-Tropsch catalyst that comprises cobalt as catalytically active metal; (b) supplying a gaseous feed stream comprising carbon monoxide and hydrogen to the reactor, wherein the gaseous feed stream initially comprises a nitrogen-containing compound other than molecular nitrogen in an initial concentration in the range of from 0.1 to 50 ppmv based on the volume of the gaseous feed stream; (c) converting carbon monoxide and hydrogen supplied with the gaseous feed stream to the reactor into hydrocarbons at an initial reaction temperature, wherein the initial reaction temperature is set at a value of at least 200 °C and hydrocarbons are produced at a first yield; (d) maintaining the initial reaction temperature at the set value and maintaining the first yield by decreasing the concentration of the nitrogen-containing compound in the gaseous feed stream supplied to the reactor wherein the concentration of the nitrogen-containing compound is gradually decreased, gradually meaning a continuous decrease or a stepwise decrease, in at least two steps, of the concentration; (e) optionally increasing the reaction temperature after the concentration of the nitrogen-containing compound in the gaseous feed stream has decreased to a value below 100 ppbv, preferably below 10 ppbv.
A wireless communication device having: a processor, a memory, an input unit, an output unit, and a communication unit, the device configured to transmit, over a first wireless communication frequency band, an information element indicating the wireless communication device is able to communicate over a second wireless communication frequency band; and characterised in that the information element comprises a Multi-band Control field containing a MAC Address indicator field to indicate whether a MAC address field is present in the information element. a processor, a memory, an input unit, an output unit, and a communication unit, the device configured to transmit, over a first wireless communication frequency band, an information element indicating the wireless communication device is able to communicate over a second wireless communication frequency band; and characterised in that the information element comprises a Multi-band Control field containing a MAC Address indicator field to indicate whether a MAC address field is present in the information element.