A method comprising: attaching (410, 510, 610) and electrically coupling a metal layer (412, 512, 612) with a semiconductor wafer (414, 514, 614), the semiconductor wafer including a first semiconductor die (422, 522, 622) and a second semiconductor die (424, 524, 624), the metal layer electrically coupling a first side of the first semiconductor die with a first side of the second semiconductor die; the method further comprises the steps of: cutting (420, 520, 620) the semiconductor wafer to: separate the first semiconductor die from the second semiconductor die; separate the first semiconductor die from the semiconductor wafer; separate the second semiconductor die from the semiconductor wafer; and form a groove (426, 526, 626) in the metal layer disposed between the first semiconductor die and the second semiconductor die when separating the first semiconductor die from the second semiconductor die; performing (430, 440, 530, 540, 630, 640) a molding operation to at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die in a compound suitable for molding; grinding (450, 550, 650) the compound to: expose a first electrical contact (110, 210, 310), the first electrical contact being to a second side of the first semiconductor die; and expose a second electrical contact (120, 220, 320), the second electrical contact being to a second side of the second semiconductor die; and cutting (470, 570, 670) the compound and the metal layer to singulate a wafer-level packaged assembly, the wafer-level packaged assembly including the first semiconductor die and the second semiconductor die. attaching (410, 510, 610) and electrically coupling a metal layer (412, 512, 612) with a semiconductor wafer (414, 514, 614), the semiconductor wafer including a first semiconductor die (422, 522, 622) and a second semiconductor die (424, 524, 624), the metal layer electrically coupling a first side of the first semiconductor die with a first side of the second semiconductor die; the method further comprises the steps of: cutting (420, 520, 620) the semiconductor wafer to: separate the first semiconductor die from the second semiconductor die; separate the first semiconductor die from the semiconductor wafer; separate the second semiconductor die from the semiconductor wafer; and form a groove (426, 526, 626) in the metal layer disposed between the first semiconductor die and the second semiconductor die when separating the first semiconductor die from the second semiconductor die; performing (430, 440, 530, 540, 630, 640) a molding operation to at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die in a compound suitable for molding; grinding (450, 550, 650) the compound to: expose a first electrical contact (110, 210, 310), the first electrical contact being to a second side of the first semiconductor die; and expose a second electrical contact (120, 220, 320), the second electrical contact being to a second side of the second semiconductor die; and cutting (470, 570, 670) the compound and the metal layer to singulate a wafer-level packaged assembly, the wafer-level packaged assembly including the first semiconductor die and the second semiconductor die. cutting (420, 520, 620) the semiconductor wafer to: separate the first semiconductor die from the second semiconductor die; separate the first semiconductor die from the semiconductor wafer; separate the second semiconductor die from the semiconductor wafer; and form a groove (426, 526, 626) in the metal layer disposed between the first semiconductor die and the second semiconductor die when separating the first semiconductor die from the second semiconductor die; separate the first semiconductor die from the second semiconductor die; separate the first semiconductor die from the semiconductor wafer; separate the second semiconductor die from the semiconductor wafer; and form a groove (426, 526, 626) in the metal layer disposed between the first semiconductor die and the second semiconductor die when separating the first semiconductor die from the second semiconductor die; performing (430, 440, 530, 540, 630, 640) a molding operation to at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die in a compound suitable for molding; grinding (450, 550, 650) the compound to: expose a first electrical contact (110, 210, 310), the first electrical contact being to a second side of the first semiconductor die; and expose a second electrical contact (120, 220, 320), the second electrical contact being to a second side of the second semiconductor die; and expose a first electrical contact (110, 210, 310), the first electrical contact being to a second side of the first semiconductor die; and expose a second electrical contact (120, 220, 320), the second electrical contact being to a second side of the second semiconductor die; and cutting (470, 570, 670) the compound and the metal layer to singulate a wafer-level packaged assembly, the wafer-level packaged assembly including the first semiconductor die and the second semiconductor die.