A method of determining an error condition in a magnetic field sensor (100, 200, 300) comprising a substrate having a major surface, comprising: receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit; receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit; determining a bridge separation value from a relation between the first bridge signal and the second bridge signal; comparing a function of the bridge separation value to a threshold value; and generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing, wherein the first full bridge circuit comprises: a first two magnetoresistance elements (304, 306, 504, 506) responsive to a first magnetic field, and a first two dummy magnetoresistance elements (512, 514, 1300) substantially less responsive or not responsive to the first magnetic field, wherein the second full bridge circuit comprises: a second two magnetoresistance elements (308, 310, 508, 510) responsive to a second magnetic field, and a second two dummy magnetoresistance elements (518, 520, 1300) substantially less responsive or not responsive to the second magnetic field, wherein the first two dummy magnetoresistance elements and the second two dummy magnetoresistance elements are each comprised of a respective plurality of strips of magnetoresistance element layers coupled in parallel, each one of the plurality of strips having a shortest dimension, the shortest dimension being parallel to the substrate and the shortest dimension being of less than five hundred nanometers, wherein the magnetoresistance elements are disposed on the major surface of the substrate. receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit; receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit; determining a bridge separation value from a relation between the first bridge signal and the second bridge signal; comparing a function of the bridge separation value to a threshold value; and generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing, wherein the first full bridge circuit comprises: a first two magnetoresistance elements (304, 306, 504, 506) responsive to a first magnetic field, and a first two dummy magnetoresistance elements (512, 514, 1300) substantially less responsive or not responsive to the first magnetic field, wherein the second full bridge circuit comprises: a second two magnetoresistance elements (308, 310, 508, 510) responsive to a second magnetic field, and a second two dummy magnetoresistance elements (518, 520, 1300) substantially less responsive or not responsive to the second magnetic field, wherein the first two dummy magnetoresistance elements and the second two dummy magnetoresistance elements are each comprised of a respective plurality of strips of magnetoresistance element layers coupled in parallel, each one of the plurality of strips having a shortest dimension, the shortest dimension being parallel to the substrate and the shortest dimension being of less than five hundred nanometers, wherein the magnetoresistance elements are disposed on the major surface of the substrate. a first two magnetoresistance elements (304, 306, 504, 506) responsive to a first magnetic field, and a first two dummy magnetoresistance elements (512, 514, 1300) substantially less responsive or not responsive to the first magnetic field, wherein the second full bridge circuit comprises: a second two magnetoresistance elements (308, 310, 508, 510) responsive to a second magnetic field, and a second two dummy magnetoresistance elements (518, 520, 1300) substantially less responsive or not responsive to the second magnetic field, wherein the first two dummy magnetoresistance elements and the second two dummy magnetoresistance elements are each comprised of a respective plurality of strips of magnetoresistance element layers coupled in parallel, each one of the plurality of strips having a shortest dimension, the shortest dimension being parallel to the substrate and the shortest dimension being of less than five hundred nanometers, wherein the magnetoresistance elements are disposed on the major surface of the substrate. a second two magnetoresistance elements (308, 310, 508, 510) responsive to a second magnetic field, and a second two dummy magnetoresistance elements (518, 520, 1300) substantially less responsive or not responsive to the second magnetic field, wherein the first two dummy magnetoresistance elements and the second two dummy magnetoresistance elements are each comprised of a respective plurality of strips of magnetoresistance element layers coupled in parallel, each one of the plurality of strips having a shortest dimension, the shortest dimension being parallel to the substrate and the shortest dimension being of less than five hundred nanometers, wherein the magnetoresistance elements are disposed on the major surface of the substrate.