A light emitting diode comprising: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an electrode electrically connected with and disposed on the first conductivity type semiconductor layer; an electrode layer under the second conductivity type semiconductor layer; an adhesion layer disposed under the electrode layer; a conductive support member disposed under the adhesion layer; and a protective layer disposed on a periphery portion of the lower surface of the second conductivity type semiconductor layer, wherein the electrode layer includes an ohmic layer and a reflective layer, wherein the first conductivity type semiconductor layer is an n type semiconductor layer and the second conductivity type semiconductor layer is a p type semiconductor layer, wherein the protective layer is disposed around the lower surface of the second conductivity type semiconductor layer, characterised in that the first conductivity type semiconductor layer includes a first top surface, a second top surface and a stepped structure, wherein in the stepped structure the second top surface is stepped lower than the first top surface; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductivity type semiconductor layer; wherein the insulating layer is disposed on the first top surface of the first conductivity type semiconductor layer, is disposed in the stepped structure and extends to a top surface of the protective layer; wherein the insulating layer is formed in a stepped shape at the stepped structure; wherein a depth of the stepped structure is smaller than the thickness of the first conductivity type semiconductor layer; wherein the stepped structure is disposed to an edge portion of the first conductivity type semiconductor layer; wherein an interval between the second top surface provided at one side of the first conductivity type semiconductor layer and the second top surface provided at an opposite side of the first conductivity type semiconductor layer is less than an interval between parts of the protective layer formed at an outer peripheral portion of the surface of the light emitting structure; wherein the stepped structure has a shape of a continuous groove formed along an upper edge of the first conductivity type semiconductor layer; and wherein a side surface between the first top surface and the second top surface is formed in a vertical surface. a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer under the first conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an electrode electrically connected with and disposed on the first conductivity type semiconductor layer; an electrode layer under the second conductivity type semiconductor layer; an adhesion layer disposed under the electrode layer; a conductive support member disposed under the adhesion layer; and a protective layer disposed on a periphery portion of the lower surface of the second conductivity type semiconductor layer, wherein the electrode layer includes an ohmic layer and a reflective layer, wherein the first conductivity type semiconductor layer is an n type semiconductor layer and the second conductivity type semiconductor layer is a p type semiconductor layer, wherein the protective layer is disposed around the lower surface of the second conductivity type semiconductor layer, characterised in that the first conductivity type semiconductor layer includes a first top surface, a second top surface and a stepped structure, wherein in the stepped structure the second top surface is stepped lower than the first top surface; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductivity type semiconductor layer; wherein the insulating layer is disposed on the first top surface of the first conductivity type semiconductor layer, is disposed in the stepped structure and extends to a top surface of the protective layer; wherein the insulating layer is formed in a stepped shape at the stepped structure; wherein a depth of the stepped structure is smaller than the thickness of the first conductivity type semiconductor layer; wherein the stepped structure is disposed to an edge portion of the first conductivity type semiconductor layer; wherein an interval between the second top surface provided at one side of the first conductivity type semiconductor layer and the second top surface provided at an opposite side of the first conductivity type semiconductor layer is less than an interval between parts of the protective layer formed at an outer peripheral portion of the surface of the light emitting structure; wherein the stepped structure has a shape of a continuous groove formed along an upper edge of the first conductivity type semiconductor layer; and wherein a side surface between the first top surface and the second top surface is formed in a vertical surface.