A method for selectively removing at least one fin or fin section from a pattern of parallel fins (440, 450) in a semiconductor structure, comprising: a. providing a substrate having a pattern of parallel fins (440, 450) thereon, the pattern of parallel fins (440, 450) having a first pitch (p 1), the fins (440, 450) having co-planar top surfaces and being separated by a filling material having a top surface coplanar with the top surfaces of the fins (440, 450); b. providing through directed self-assembly a layer of self-assembled block copolymer covering the top surfaces of the fins (440, 450) and of the filling material, the self-assembled block copolymer comprising a regular pattern of parallel lines of a first phase alternating with parallel lines of a second phase, the pattern of parallel lines of the first and second phase being aligned to the pattern of parallel fins (440, 450) and having a second pitch (p 2) equal to an integer multiple of the first pitch (p 1), the parallel lines of the first phase and the parallel lines of the second phase each being at least as wide as the top surface of the fins (440, 450) and being parallel to the fins (440, 450); c. removing the lines of the first phase selectively with respect to the lines of the second phase, thereby uncovering the top surfaces of the at least one fin or fin section to be removed and the top surface of some of the filling material; and d. etching away the at least one uncovered fin or fin section and the uncovered filling material by using the lines of the second phase as a mask, thereby leaving voids where the at least one uncovered fin or fin section and the uncovered filling material was present, wherein one of the first and second phase has a preferential wetting affinity for the top surface of the fins (440, 450), or wherein one of the first and second phase has a preferential wetting affinity for the top surface of the filling material. a. providing a substrate having a pattern of parallel fins (440, 450) thereon, the pattern of parallel fins (440, 450) having a first pitch (p 1), the fins (440, 450) having co-planar top surfaces and being separated by a filling material having a top surface coplanar with the top surfaces of the fins (440, 450); b. providing through directed self-assembly a layer of self-assembled block copolymer covering the top surfaces of the fins (440, 450) and of the filling material, the self-assembled block copolymer comprising a regular pattern of parallel lines of a first phase alternating with parallel lines of a second phase, the pattern of parallel lines of the first and second phase being aligned to the pattern of parallel fins (440, 450) and having a second pitch (p 2) equal to an integer multiple of the first pitch (p 1), the parallel lines of the first phase and the parallel lines of the second phase each being at least as wide as the top surface of the fins (440, 450) and being parallel to the fins (440, 450); c. removing the lines of the first phase selectively with respect to the lines of the second phase, thereby uncovering the top surfaces of the at least one fin or fin section to be removed and the top surface of some of the filling material; and d. etching away the at least one uncovered fin or fin section and the uncovered filling material by using the lines of the second phase as a mask, thereby leaving voids where the at least one uncovered fin or fin section and the uncovered filling material was present,