Method for producing a multi-component wafer, especially a MEMS wafer, at least comprising the steps of: providing a bond wafer, where at least a surface portion of the bond wafer is formed by an oxide layer, providing a donor wafer, where the donor wafer is thicker than the bond wafer, contacting the donor wafer with the surface portion of the bond water that is formed by the oxide layer, forming a multi-layer arrangement by joining the donor wafer and the bond wafer in the region of the contact, generating modifications in the interior of the donor wafer for mandating a detachment region for separating the donor wafer into a removal part and a joining part by means of at least one LASER beam, where the modifications are generated before the multi-layer arrangement is formed, and where the LASER beams penetrate the donor wafer via a surface of the donor wafer, where this surface of the donor wafer is part of the joining part after the dividing of the donor wafer, separating the multi-layer arrangement along the detachment region as a result of a weakening of the multi-layer arrangement brought about by the generation of a sufficient number of modifications, or as a result of a generation of mechanical stresses in the multi-layer arrangement, where the joining part remains on the bond wafer and where the removal part split off has a greater thickness than the joining part, further comprising the steps of: converting the removal part into a further bond wafer by treatment of at least one surface portion of the removal part, and providing the further bond wafer for contacting with a further donor wafer. providing a bond wafer, where at least a surface portion of the bond wafer is formed by an oxide layer, providing a donor wafer, where the donor wafer is thicker than the bond wafer, contacting the donor wafer with the surface portion of the bond water that is formed by the oxide layer, forming a multi-layer arrangement by joining the donor wafer and the bond wafer in the region of the contact, generating modifications in the interior of the donor wafer for mandating a detachment region for separating the donor wafer into a removal part and a joining part by means of at least one LASER beam, where the modifications are generated before the multi-layer arrangement is formed, and where the LASER beams penetrate the donor wafer via a surface of the donor wafer, where this surface of the donor wafer is part of the joining part after the dividing of the donor wafer, separating the multi-layer arrangement along the detachment region as a result of a weakening of the multi-layer arrangement brought about by the generation of a sufficient number of modifications, or as a result of a generation of mechanical stresses in the multi-layer arrangement, where the joining part remains on the bond wafer and where the removal part split off has a greater thickness than the joining part, where the modifications are generated before the multi-layer arrangement is formed, and where the LASER beams penetrate the donor wafer via a surface of the donor wafer, where this surface of the donor wafer is part of the joining part after the dividing of the donor wafer, separating the multi-layer arrangement along the detachment region as a result of a weakening of the multi-layer arrangement brought about by the generation of a sufficient number of modifications, or as a result of a generation of mechanical stresses in the multi-layer arrangement, where the joining part remains on the bond wafer and where the removal part split off has a greater thickness than the joining part, further comprising the steps of: converting the removal part into a further bond wafer by treatment of at least one surface portion of the removal part, and providing the further bond wafer for contacting with a further donor wafer. converting the removal part into a further bond wafer by treatment of at least one surface portion of the removal part, and providing the further bond wafer for contacting with a further donor wafer.