A semiconductor device, comprising: a substrate; and a plurality of capacitor elements on the substrate, wherein each capacitor element comprises: a first electrode comprising a first pad and first terminals connected to the first pad, wherein the first terminals extend vertically and in a direction perpendicular away from the substrate; and a second electrode comprising a second pad and second terminals connected to the second pad, wherein the second terminals extend vertically and in a direction perpendicular toward the substrate, wherein the first terminals and the second terminals are staggered in an interdigitating manner and are separated by an interlayer dielectric layer; and wherein the plurality of capacitor elements are successively stacked on the substrate, wherein the first pad of a lower one of the capacitor elements is connected to the second pad of an upper one of the capacitor elements; and wherein the second pad of the lower one of the capacitor elements is connected to the first pad of the upper one of the capacitor elements, characterized in that the semiconductor device further comprises a further plurality of capacitor elements on the opposite surface of the substrate; a first IC element disposed above the plurality of capacitor elements on an upper surface of the substrate; and a second IC element disposed below the further plurality of capacitor elements under a lower surface of the substrate. a substrate; and a plurality of capacitor elements on the substrate, wherein each capacitor element comprises: a first electrode comprising a first pad and first terminals connected to the first pad, wherein the first terminals extend vertically and in a direction perpendicular away from the substrate; and a second electrode comprising a second pad and second terminals connected to the second pad, wherein the second terminals extend vertically and in a direction perpendicular toward the substrate, wherein the first terminals and the second terminals are staggered in an interdigitating manner and are separated by an interlayer dielectric layer; and wherein the plurality of capacitor elements are successively stacked on the substrate, wherein the first pad of a lower one of the capacitor elements is connected to the second pad of an upper one of the capacitor elements; and wherein the second pad of the lower one of the capacitor elements is connected to the first pad of the upper one of the capacitor elements, a first electrode comprising a first pad and first terminals connected to the first pad, wherein the first terminals extend vertically and in a direction perpendicular away from the substrate; and a second electrode comprising a second pad and second terminals connected to the second pad, wherein the second terminals extend vertically and in a direction perpendicular toward the substrate, wherein the first terminals and the second terminals are staggered in an interdigitating manner and are separated by an interlayer dielectric layer; and wherein the plurality of capacitor elements are successively stacked on the substrate, wherein the first pad of a lower one of the capacitor elements is connected to the second pad of an upper one of the capacitor elements; and wherein the second pad of the lower one of the capacitor elements is connected to the first pad of the upper one of the capacitor elements, characterized in that the semiconductor device further comprises a further plurality of capacitor elements on the opposite surface of the substrate; a first IC element disposed above the plurality of capacitor elements on an upper surface of the substrate; and a second IC element disposed below the further plurality of capacitor elements under a lower surface of the substrate.