mhurhangee/ep-ind-claims huggingface dataset:
A method implemented by one or more processors, the method comprising: causing, by a portable client device, a graphical camera interface to be provided at a touch screen display of the portable client device, wherein the graphical camera interface provides a graphical representation of an environment at which a camera of the portable client device is directed; determining, based on image data provided by the camera when the camera is directed at the environment and based on processing of the image data provided by the camera, that the graphical representation of the environment portrays a controllable electronic device that is located within the environment; determining, in response to determining that the graphical representation of the environment portrays the controllable electronic device, an adjustable setting of the controllable electronic device, wherein the adjustable setting, when modified, alters at least one state of the controllable electronic device; receiving, at the touch screen display of the portable client device, a selection at the graphical camera interface; and causing, in response to receiving the selection at the graphical camera interface, the adjustable setting of the controllable electronic device to be modified. causing, by a portable client device, a graphical camera interface to be provided at a touch screen display of the portable client device, wherein the graphical camera interface provides a graphical representation of an environment at which a camera of the portable client device is directed; determining, based on image data provided by the camera when the camera is directed at the environment and based on processing of the image data provided by the camera, that the graphical representation of the environment portrays a controllable electronic device that is located within the environment; determining, in response to determining that the graphical representation of the environment portrays the controllable electronic device, an adjustable setting of the controllable electronic device, wherein the adjustable setting, when modified, alters at least one state of the controllable electronic device; receiving, at the touch screen display of the portable client device, a selection at the graphical camera interface; and causing, in response to receiving the selection at the graphical camera interface, the adjustable setting of the controllable electronic device to be modified.
A circuit board laminate comprising a metal substrate, an insulating layer disposed on at least one surface of the metal substrate and a metal foil disposed on the insulating layer, wherein the insulating layer comprises an inorganic filler, characterized in that the insulating layer comprises a crosslinked copolymer consisting of bisphenol cyanate resin and novolac cyanate resin, and a curing accelerator, wherein the bisphenol cyanate resin and the novolac cyanate resin are contained in the insulating layer in a mass ratio of 11:1 to 1:3.
A method of encoding a picture of a video sequence, said picture comprising multiple slices, said method comprising: determining whether final reference picture list or lists is or are the same for all slices of a same slice type in said picture; generating an encoded representation of said picture; associating, with said encoded representation, at least one mode signaling syntax element indicative of whether said final reference picture list or lists is or are the same for all slices of said same slice type in said picture, and further comprising setting a reference picture list modification flag to a first value if initial reference picture list or lists obtained in a reference picture list initialization is or are to be used as said final reference picture list or lists, wherein associating said at least one mode signaling syntax element comprises associating said reference picture list modification flag with said encoded representation, and the method further comprising setting a reference picture list modification flag to a second value if modified reference picture list or lists obtained by modifying initial reference picture list or lists obtained in a reference picture list initialization is or are to be used as said final reference picture list or lists, wherein associating said at least one mode signaling syntax element comprises associating said reference picture list modification flag with said encoded representation. determining whether final reference picture list or lists is or are the same for all slices of a same slice type in said picture; generating an encoded representation of said picture; associating, with said encoded representation, at least one mode signaling syntax element indicative of whether said final reference picture list or lists is or are the same for all slices of said same slice type in said picture, and further comprising setting a reference picture list modification flag to a first value if initial reference picture list or lists obtained in a reference picture list initialization is or are to be used as said final reference picture list or lists, wherein associating said at least one mode signaling syntax element comprises associating said reference picture list modification flag with said encoded representation, and the method further comprising setting a reference picture list modification flag to a second value if modified reference picture list or lists obtained by modifying initial reference picture list or lists obtained in a reference picture list initialization is or are to be used as said final reference picture list or lists, wherein associating said at least one mode signaling syntax element comprises associating said reference picture list modification flag with said encoded representation.
A terminal device to be connected to a venthole, which venthole has a wall and which terminal device has a plate-like frame part and gripping members which can extend into the venthole for attaching to the venthole wall, which gripping members comprise a first locking tab and a second locking tab and which first and second locking tab can be set in a first formation, where the first and second locking tab are at a first distance from each other, and in a second formation, where the first and second locking tab are at a second distance from each other, which second distance is larger than the first distance, characterized in that said locking tabs have an attaching surface to be set against the inner surface of the venthole wall and said locking tab is arranged in an attaching member (18a, 18b, 18c, 18d), which attaching member (18a, 18b, 18c, 18d) has plate like base attached to the frame part of the terminal device and the locking tab bends in a substantially right angle from the base and that at least one attaching member (18a, 18b, 18c, 18d) is attached to the frame part in a hinged manner, so that the attaching member (18a, 18b, 18c, 18d) can be turned in the plane defined by the frame part into a first position, where the locking tabs settle in the first formation, and into a second position, where the locking tabs settle in the second formation.
A method for connecting an electrical cable, having at least one wire which is made of aluminium, to a connector element consisting of aluminium and having a tube, wherein after inserting a stripped end or - when using insulated wires - an unstripped end of the electrical cable into the tube, the method is characterised by the following method steps, a) in a first crimping process, crimping the tube in a first crimping region in which the end of the electrical cable is placed, such that the at least one wire is held in the tube so that a relative movement between the tube and the at least one wire is prevented, b) in a second crimping process, crimping the tube in a second crimping region of the electrical cable which is located further removed from the end of the electrical cable than the first crimping region, wherein an elongation of the at least one wire is brought about in addition to a change in cross section, and c) in a welding process, resistance welding the tube to the at least one wire in the second crimping region. a) in a first crimping process, crimping the tube in a first crimping region in which the end of the electrical cable is placed, such that the at least one wire is held in the tube so that a relative movement between the tube and the at least one wire is prevented, b) in a second crimping process, crimping the tube in a second crimping region of the electrical cable which is located further removed from the end of the electrical cable than the first crimping region, wherein an elongation of the at least one wire is brought about in addition to a change in cross section, and c) in a welding process, resistance welding the tube to the at least one wire in the second crimping region.
A pharmaceutical composition, comprising an isolated effector protein of a type III secretion system (T3SS)-containing bacterium of the genus Salmonella or Shigella or a fragment thereof, linked to a cargo molecule selected from the group consisting of nucleic acids, polypeptides, organic molecules, small organic molecules, metals, nanoparticles, viruses, modified viruses, viral vectors, antibodies and/or plasmids, for use in a method of treatment, wherein the effector protein or fragment is characterized in that it has an amino acid sequence at least 80% identical to SEQ ID NOs 1-9, 19-27, 37-65 or 550; and a) is recombinantly produced or chemically synthesized, b) optionally comprises at least one Leucin-rich repeat, and c) is a cell-penetrating protein, which translocates into eukaryotic cells without the requirement of a bacterial T3SS; and wherein SEQ ID NOs 1-9 and 19-27 additionally comprise an E3 ubiquitin ligase domain; and wherein the pharmaceutical composition comprises no bacterial T3SS and the effector protein delivers the cargo molecule across the membrane of a eukaryotic cell without the requirement of the bacterial T3SS. a) is recombinantly produced or chemically synthesized, b) optionally comprises at least one Leucin-rich repeat, and c) is a cell-penetrating protein, which translocates into eukaryotic cells without the requirement of a bacterial T3SS; and wherein SEQ ID NOs 1-9 and 19-27 additionally comprise an E3 ubiquitin ligase domain; and
A blade sharpening and storing device (20, 100) including: a hollow housing (30, 140) for receiving and storing a blade; an access opening (37, 49) at an end of the housing through which the blade can be moved longitudinally to be inserted into or withdrawn from the housing; a blade sharpener pivotally mounted within the housing and positioned to be engaged by a cutting edge of the blade when the blade is inserted into or withdrawn from the housing and which is responsive to movement of the blade relative to the housing to sharpen the cutting edge; and a blade honing device including at least one honing surface (13, 14) positioned to be engaged by the cutting edge of the blade when the blade is inserted into or withdrawn from the housing and which is responsive to movement of the blade relative to the housing to hone the cutting edge, wherein the blade honing device is mounted within the housing and is biased by a spring to cause engagement between the cutting edge of the blade and the honing surface, characterised in that the honing device includes a honing support member supporting the honing members, the honing support member is mounted to the housing to be movable in a linear direction vertically upwards within the housing and is biased in the vertically upwards direction so that upon movement of the blade relative to the housing the cutting edge of the blade is maintained within the honing recess and in engagement with the honing surfaces. a hollow housing (30, 140) for receiving and storing a blade; an access opening (37, 49) at an end of the housing through which the blade can be moved longitudinally to be inserted into or withdrawn from the housing; a blade sharpener pivotally mounted within the housing and positioned to be engaged by a cutting edge of the blade when the blade is inserted into or withdrawn from the housing and which is responsive to movement of the blade relative to the housing to sharpen the cutting edge; and a blade honing device including at least one honing surface (13, 14) positioned to be engaged by the cutting edge of the blade when the blade is inserted into or withdrawn from the housing and which is responsive to movement of the blade relative to the housing to hone the cutting edge, wherein the blade honing device is mounted within the housing and is biased by a spring to cause engagement between the cutting edge of the blade and the honing surface,
A gluing method for gluing part elements of a laminate structure, in which method: - at least two glue components and a hardener to be used in the gluing of the part elements are selected at the control unit of the glue manufacturing apparatus, - the control unit of the glue manufacturing apparatus determines the mutual mixing ratio of the selected glue components at the starting moment of the glue manufacturing process - pumping of the different glue components to the mixing unit is started after the determination of the mixing ratio - the glue components are pumped to the mixing unit with component-specific pumps (20, 21, 22) in a mixture ratio determined by the control unit, characterized in that, the selected glue components are polyurethane-based components having open times of different lengths and in the method, the control unit adjusts the mixing ratio of the glue components to be administered on a part element as a function of time so that the open time of the glue coming out from the mixing unit shortens after each part element fastened to the laminate structure towards the end of the gluing process, whereby the clamping time of the part elements of the laminate structure to be glued together is as long as the clamping time of the last administered glue layer having the shortest open time, upon the expiry of which all the glue layers have reached the target hardness. - at least two glue components and a hardener to be used in the gluing of the part elements are selected at the control unit of the glue manufacturing apparatus, - the control unit of the glue manufacturing apparatus determines the mutual mixing ratio of the selected glue components at the starting moment of the glue manufacturing process - pumping of the different glue components to the mixing unit is started after the determination of the mixing ratio - the glue components are pumped to the mixing unit with component-specific pumps (20, 21, 22) in a mixture ratio determined by the control unit,
High-frequency plasma ignition device, in particular for an internal combustion engine and in particular for the ignition of a fuel/air mixture in a combustion chamber of an internal combustion engine, comprising a resonant series circuit which has an inductive means and a capacitive means connected in series, and a high-frequency generator having a first electrical terminal and a second electrical terminal for the resonant excitation of the resonant series circuit, a first electrical contact point being provided at which one end of the capacitive means and one end of the inductive means are connected together electrically, the capacitive means having a second electrical contact point at an end which is remote from the first contact point and the inductive means having a third electrical contact point at an end which is remote from the first contact point, an electrical connecting device being provided which connects the first terminal of the high-frequency generator to the third contact point electrically and the second terminal of the high-frequency generator to the second contact point electrically in such a way that an output signal from the high-frequency generator is applied to the resonant series circuit via the second and third electrical contact points (16, 18), a first electrode being arranged and configured in such a way that it is connected electrically to the first electrical contact point and a second electrode being arranged and configured in such a way that it is connected electrically to the second electrical contact point, with the result that there is available between a free end of the first electrode, which free end is remote from the first electrical contact point, and a free end of the second electrode, which free end is remote from the second electrical contact point, a voltage for igniting a plasma between said free ends (34, 38) of the first and second electrodes (32, 36), which voltage is applied across the capacitive means, characterised in that a third electrode is arranged and configured in such a way that it is electrically connected to the third electrical contact point, and a free end of the third electrode, which free end is remote from the third electrical contact point, is arranged in such a way that a voltage for maintaining the plasma after ignition is available between said free end of the third electrode and the free end of the second electrode, which voltage is applied via the second and third electrical contact points (16, 18).
A semiconductor device comprising: - a semiconductor module in which a semiconductor element is sealed with a resin, the semiconductor module provided with connection terminals (21, 22), - a reinforcing beam fixed to an upper surface of the semiconductor module, and - a frame part to which the reinforcing beam is fixed, the frame part being disposed in such a fashion as to enclose an outer periphery of the semiconductor module and the reinforcing beam fixed to the semiconductor module, such that a lower surface of the semiconductor module is able to contact a cooling member, wherein the semiconductor module and the reinforcing beam are fixed via a plate-like spring, and wherein the semiconductor module and the reinforcing beam are fixed with a gap being defined between the semiconductor module and the plate-like spring, and wherein the semiconductor module is movable in a vertical direction with respect to the frame part by way of deformation of the plate-like spring and deformation of the connection terminals (21, 22), when the cooling member is attached to the frame part of the semiconductor device from below. - a semiconductor module in which a semiconductor element is sealed with a resin, the semiconductor module provided with connection terminals (21, 22), - a reinforcing beam fixed to an upper surface of the semiconductor module, and - a frame part to which the reinforcing beam is fixed, the frame part being disposed in such a fashion as to enclose an outer periphery of the semiconductor module and the reinforcing beam fixed to the semiconductor module, such that a lower surface of the semiconductor module is able to contact a cooling member,
A semiconductor device, comprising: a substrate; an insulating growth mask located over the substrate; a plurality of III-nitride semiconductor nanowires protruding from openings in the growth mask and extending substantially perpendicular to a major surface of the substrate; a plurality of discrete III-nitride semiconductor mesas, wherein each of the plurality of mesas is located around and over each of the plurality of the nanowires; each mesa containing a III-nitride displacing layer, comprising a GaN layer, a ternary layer or a quaternary layer, whose upper surface forms a substantially planar c-plane upper surface of the mesa; at least one electrode located over each semiconductor mesa, wherein the displacing layer is either: a low doped semiconductor or semi-insulating layer which is not part of an active device region of the device; or a semiconductor layer which is part of the active device region of the device, wherein the displacing layer contains a 2DEG of a lateral device, the substantially planar c-plane upper surface being offset from an upper tip of the nanowire located in the mesa, such that the nanowire is not part of an active device region of the device and not connected to an outside circuit. a substrate; an insulating growth mask located over the substrate; a plurality of III-nitride semiconductor nanowires protruding from openings in the growth mask and extending substantially perpendicular to a major surface of the substrate; a plurality of discrete III-nitride semiconductor mesas, wherein each of the plurality of mesas is located around and over each of the plurality of the nanowires; each mesa containing a III-nitride displacing layer, comprising a GaN layer, a ternary layer or a quaternary layer, whose upper surface forms a substantially planar c-plane upper surface of the mesa; at least one electrode located over each semiconductor mesa, wherein the displacing layer is either: a low doped semiconductor or semi-insulating layer which is not part of an active device region of the device; or a semiconductor layer which is part of the active device region of the device, wherein the displacing layer contains a 2DEG of a lateral device, a low doped semiconductor or semi-insulating layer which is not part of an active device region of the device; or a semiconductor layer which is part of the active device region of the device, wherein the displacing layer contains a 2DEG of a lateral device, the substantially planar c-plane upper surface being offset from an upper tip of the nanowire located in the mesa, such that the nanowire is not part of an active device region of the device and not connected to an outside circuit.
An oil well seamless teel pipe, excellent in sulfide stress cracking resistance, characterized in that the steel has a bainite single phase structure and consists of, by mass %, C: 0.30 to 0.60%, Si: 0.05 to 0.5%, Mn: 0.05 to 1.0%, Al: 0.005 to 0.10%, Cr+Mo: 1.5 to 3.0%, wherein Mo is 0.5% or more, V: 0.05 to 0.3%, Nb: 0 to 0.1 %, Ti: 0 to 0.1 %, Zr: 0 to 0.1 %, N: 0 to 0.03%, Ca: 0 to 0.01%, and the balance Fe and impurities, wherein P as an impurity is 0.025% or less, S as an impurity is 0.01% or less, B as an impurity is 0.0010% or less and O (oxygen) as an impurity is 0.01% or less.
A fused cast refractory product comprising, in percentages by weight based on the oxides and for a total of 100% of the oxides: ZrO 2 + HfO 2: complement to 100% 4.0% < SiO 2 < 6.5% Al 2 O 3 ≤ 0.75% 0.2% < B 2 O 3 < 1.5% 0.3% < Ta 2 O 5 Nb 2 O 5 + Ta 2 O 5 <1.4% Na 2 O + K 2 O < 0.2% BaO < 0.2% P 2 O 5 < 0.15% Fe 2 O 3 + TiO 2 < 0.55% other oxide species: < 1.5% the ratio "A/B" of the contents by weight Al 2 O 3 / B 2 O 3 being less than 1.50. ZrO 2 + HfO 2: complement to 100% 4.0% < SiO 2 < 6.5% Al 2 O 3 ≤ 0.75% 0.2% < B 2 O 3 < 1.5% 0.3% < Ta 2 O 5 Nb 2 O 5 + Ta 2 O 5 <1.4% Na 2 O + K 2 O < 0.2% BaO < 0.2% P 2 O 5 < 0.15% Fe 2 O 3 + TiO 2 < 0.55% other oxide species: < 1.5%