A method of preparing a multilayer structure, the method comprising: epitaxially depositing an epitaxial layer on the front surface of a single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal semiconductor handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal semiconductor handle substrate, a central plane between the front surface and the back surface of the single crystal semiconductor handle substrate, and a bulk region between the front and back surfaces (102, 104) of the single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises an electrically active n-type dopant selected from the group consisting of arsenic, phosphorus, antimony, and any combination thereof, has a minimum bulk region resistivity of at least 500 ohm-cm and further has a handle substrate crystal orientation, and wherein the epitaxial layer comprises silicon and an electrically active p-type dopant selected from the group consisting of boron, aluminum, gallium, indium, and any combination thereof, has a resistivity between 100 ohm-cm and 5000 ohm-cm and further has a crystal orientation that is the same as the handle substrate crystal orientation; depositing a charge trapping layer on the epitaxial layer, the charge trapping layer comprising polycrystalline silicon having a resistivity of at least 3000 ohm-cm; and bonding a dielectric layer on a front surface of a single crystal semiconductor donor substrate to the charge trapping layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, and a central plane between the front and back surfaces of the semiconductor donor substrate, wherein the single crystal semiconductor donor substrate further comprises a thermally activated cleave plane. epitaxially depositing an epitaxial layer on the front surface of a single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the single crystal semiconductor handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front surface and the back surface of the single crystal semiconductor handle substrate, a central plane between the front surface and the back surface of the single crystal semiconductor handle substrate, and a bulk region between the front and back surfaces (102, 104) of the single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate comprises an electrically active n-type dopant selected from the group consisting of arsenic, phosphorus, antimony, and any combination thereof, has a minimum bulk region resistivity of at least 500 ohm-cm and further has a handle substrate crystal orientation, and wherein the epitaxial layer comprises silicon and an electrically active p-type dopant selected from the group consisting of boron, aluminum, gallium, indium, and any combination thereof, has a resistivity between 100 ohm-cm and 5000 ohm-cm and further has a crystal orientation that is the same as the handle substrate crystal orientation; depositing a charge trapping layer on the epitaxial layer, the charge trapping layer comprising polycrystalline silicon having a resistivity of at least 3000 ohm-cm; and bonding a dielectric layer on a front surface of a single crystal semiconductor donor substrate to the charge trapping layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, and a central plane between the front and back surfaces of the semiconductor donor substrate, wherein the single crystal semiconductor donor substrate further comprises a thermally activated cleave plane.