A method of manufacturing a semiconductor device, comprising: forming at least a first trench in a molded wafer at a first side (112, 202) of the molded wafer in a lane between a first semiconductor die of a first thickness and a second semiconductor die of the first thickness, wherein the first and second semiconductor dies (106a, b) are arranged in a grid-like pattern and spaced apart by the lane and embedded in molding material of a second thickness greater than the first thickness, wherein the first and second dies (106a, b) have bond-sites (108a, b) at the first side of the molded wafer and wherein the molded wafer includes the molding material shaped into a wafer; forming a second trench in the first side (112, 202) of the molded wafer in the lane, wherein the second trench is spaced apart from and generally parallel to the first trench, wherein each of the first and second trenches (210a, b) has a first depth less than the second thickness and equal to or greater than the first thickness; removing material from a second side of the molded wafer opposite the first side (112, 202) at a portion overlapping the first and second trenches (210a, b), wherein removing material from the second side includes forming multiple channels in the second side of the molded wafer at a predetermined pitch within a footprint of the first and second semiconductor dies (106 a, b) in a direction generally transverse to the first and second trenches (210a, b), and wherein forming the multiple channels forms a first opening and a second opening through the molded wafer at intersections between each channel and the first and second trenches (210a,b) respectively, wherein each channel has a second depth such that the channel does not intersect the first and second semiconductor dies (106a, b), wherein a combination of the first and second depths is equal to or greater than the second thickness; forming electrical connectors (248, 348) extending from individual bond-sites (108a, b) of the first and second dies (106a, b) to the second side of the molded wafer via corresponding first and second openings through the molded wafer; and singulating the first and second dies (106a, b) by cutting the molded wafer between the first and second trenches (210a, b). forming at least a first trench in a molded wafer at a first side (112, 202) of the molded wafer in a lane between a first semiconductor die of a first thickness and a second semiconductor die of the first thickness, wherein the first and second semiconductor dies (106a, b) are arranged in a grid-like pattern and spaced apart by the lane and embedded in molding material of a second thickness greater than the first thickness, wherein the first and second dies (106a, b) have bond-sites (108a, b) at the first side of the molded wafer and wherein the molded wafer includes the molding material shaped into a wafer; forming a second trench in the first side (112, 202) of the molded wafer in the lane, wherein the second trench is spaced apart from and generally parallel to the first trench, wherein each of the first and second trenches (210a, b) has a first depth less than the second thickness and equal to or greater than the first thickness; removing material from a second side of the molded wafer opposite the first side (112, 202) at a portion overlapping the first and second trenches (210a, b), wherein removing material from the second side includes forming multiple channels in the second side of the molded wafer at a predetermined pitch within a footprint of the first and second semiconductor dies (106 a, b) in a direction generally transverse to the first and second trenches (210a, b), and wherein forming the multiple channels forms a first opening and a second opening through the molded wafer at intersections between each channel and the first and second trenches (210a,b) respectively, wherein each channel has a second depth such that the channel does not intersect the first and second semiconductor dies (106a, b), wherein a combination of the first and second depths is equal to or greater than the second thickness; forming electrical connectors (248, 348) extending from individual bond-sites (108a, b) of the first and second dies (106a, b) to the second side of the molded wafer via corresponding first and second openings through the molded wafer; and singulating the first and second dies (106a, b) by cutting the molded wafer between the first and second trenches (210a, b).