A method of manufacturing an avalanche photodiode including: a p-type semiconductor layer formed on a transfer substrate and made of a p-type semiconductor; a light absorption layer formed on the p-type semiconductor layer and made of germanium; an electric field control layer formed on the light absorption layer and made of a p-type semiconductor; a multiplication layer formed on the electric field control layer and made of silicon; and an n-type semiconductor layer formed on the multiplication layer, made of n-type silicon, and including a first surface contacting the multiplication layer, the multiplication layer including a second surface contacting the n-type semiconductor layer, the method comprising: a first step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer on a growth substrate; a second step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate; and a third step of processing the n-type semiconductor layer so that the first surface of the n-type semiconductor layer has an area smaller than that of the second surface of the multiplication layer, after the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer are transferred to the transfer substrate, followed by a step wherein the light absorption layer, the electric field control layer, and the multiplication layer are processed into a mesa having a predetermined shape. a p-type semiconductor layer formed on a transfer substrate and made of a p-type semiconductor; a light absorption layer formed on the p-type semiconductor layer and made of germanium; an electric field control layer formed on the light absorption layer and made of a p-type semiconductor; a multiplication layer formed on the electric field control layer and made of silicon; and an n-type semiconductor layer formed on the multiplication layer, made of n-type silicon, and including a first surface contacting the multiplication layer, the multiplication layer including a second surface contacting the n-type semiconductor layer, the method comprising: a first step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer on a growth substrate; a second step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate; and a third step of processing the n-type semiconductor layer so that the first surface of the n-type semiconductor layer has an area smaller than that of the second surface of the multiplication layer, after the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer are transferred to the transfer substrate, followed by a step wherein the light absorption layer, the electric field control layer, and the multiplication layer are processed into a mesa having a predetermined shape. a first step of forming the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer on a growth substrate; a second step of transferring the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer formed on the growth substrate to the transfer substrate; and a third step of processing the n-type semiconductor layer so that the first surface of the n-type semiconductor layer has an area smaller than that of the second surface of the multiplication layer, after the n-type semiconductor layer, the multiplication layer, the electric field control layer, and the light absorption layer are transferred to the transfer substrate, followed by a step wherein the light absorption layer, the electric field control layer, and the multiplication layer are processed into a mesa having a predetermined shape.