A semiconductor device comprising: a semiconductor die comprising a radio frequency, RF, circuit embedded in a first dielectric layer; the first dielectric layer being disposed over a first surface of the semiconductor die, the first surface being a backside of the semiconductor die and over a second surface of the semiconductor die, the second surface being a front side of the semiconductor die on an opposite side of the semiconductor die an antenna layer (142, 144) disposed over a surface of the first dielectric layer; and an antenna feeding structure coupling the antenna layer (142, 144) to the radio frequency circuit of the semiconductor die, wherein: the semiconductor die comprises an opening comprising a via (121, 123) in the semiconductor die; and the antenna feeding structure comprises a first portion formed by the via (121, 123) in the semiconductor die and extending to the first surface of the semiconductor die, and a second portion (138, 136) formed by a via (138, 136) through the first dielectric layer; a redistribution structure (110, 112, 114) opposite the second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the radio frequency circuit using vias (132, 134) through the first dielectric layer; and a plurality of input/output connectors electrically coupled to the semiconductor die through the redistribution structure. a semiconductor die comprising a radio frequency, RF, circuit embedded in a first dielectric layer; the first dielectric layer being disposed over a first surface of the semiconductor die, the first surface being a backside of the semiconductor die and over a second surface of the semiconductor die, the second surface being a front side of the semiconductor die on an opposite side of the semiconductor die an antenna layer (142, 144) disposed over a surface of the first dielectric layer; and an antenna feeding structure coupling the antenna layer (142, 144) to the radio frequency circuit of the semiconductor die, wherein: the semiconductor die comprises an opening comprising a via (121, 123) in the semiconductor die; and the antenna feeding structure comprises a first portion formed by the via (121, 123) in the semiconductor die and extending to the first surface of the semiconductor die, and a second portion (138, 136) formed by a via (138, 136) through the first dielectric layer; a redistribution structure (110, 112, 114) opposite the second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the radio frequency circuit using vias (132, 134) through the first dielectric layer; and the semiconductor die comprises an opening comprising a via (121, 123) in the semiconductor die; and the antenna feeding structure comprises a first portion formed by the via (121, 123) in the semiconductor die and extending to the first surface of the semiconductor die, and a second portion (138, 136) formed by a via (138, 136) through the first dielectric layer; a redistribution structure (110, 112, 114) opposite the second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the radio frequency circuit using vias (132, 134) through the first dielectric layer; and a plurality of input/output connectors electrically coupled to the semiconductor die through the redistribution structure.