A photovoltaic cell comprising: a substrate; a doped layer disposed in a portion of the substrate adjacent to a first surface of the substrate, wherein a doping element type of the doped layer is the same as a doping element type of the substrate, and a doping concentration of the doped layer is greater than a doping concentration of the substrate, wherein the doped layer includes a plurality of first doped regions arranged at intervals along a first direction, a plurality of second doped regions disposed between respective two adjacent first doped regions and a plurality of third doped regions disposed between the respective two adjacent first doped regions, and wherein a doping concentration of each of the plurality of first doped regions is less than a doping concentration of any of the plurality of second doped regions and less than a doping concentration of any of the plurality of third doped regions; at least one tunneling dielectric layer disposed on the plurality of first doped regions and the plurality of second doped regions; a plurality of doped conductive layers arranged at intervals along the first direction, wherein each of the plurality of doped conductive layers is aligned with a respective first doped region and is disposed on a respective tunneling dielectric layer; a plurality of first electrodes arranged at intervals along the first direction, wherein the plurality of first electrodes extend in a second direction, each of the plurality of first electrodes is disposed on a side of a respective doped conductive layer away from the substrate and electrically connected to the respective doped conductive layer; and a plurality of conductive transport layers each aligned with a respective second doped region, wherein the plurality of conductive transport layers are disposed on the at least one tunneling dielectric layer, and each of the plurality of conductive transport layers is disposed between respective two adjacent doped conductive layers and is in contact with side walls of the respective two adjacent doped conductive layer so that the majority carriers in the substrate are able to be transported into the doped conductive layers through the plurality of conductive transport layers, thereby enhancing the lateral transport capability of the majority carriers in the substrate. a substrate; a doped layer disposed in a portion of the substrate adjacent to a first surface of the substrate, wherein a doping element type of the doped layer is the same as a doping element type of the substrate, and a doping concentration of the doped layer is greater than a doping concentration of the substrate, wherein the doped layer includes a plurality of first doped regions arranged at intervals along a first direction, a plurality of second doped regions disposed between respective two adjacent first doped regions and a plurality of third doped regions disposed between the respective two adjacent first doped regions, and wherein a doping concentration of each of the plurality of first doped regions is less than a doping concentration of any of the plurality of second doped regions and less than a doping concentration of any of the plurality of third doped regions; at least one tunneling dielectric layer disposed on the plurality of first doped regions and the plurality of second doped regions; a plurality of doped conductive layers arranged at intervals along the first direction, wherein each of the plurality of doped conductive layers is aligned with a respective first doped region and is disposed on a respective tunneling dielectric layer; a plurality of first electrodes arranged at intervals along the first direction, wherein the plurality of first electrodes extend in a second direction, each of the plurality of first electrodes is disposed on a side of a respective doped conductive layer away from the substrate and electrically connected to the respective doped conductive layer; and a plurality of conductive transport layers each aligned with a respective second doped region, wherein the plurality of conductive transport layers are disposed on the at least one tunneling dielectric layer, and each of the plurality of conductive transport layers is disposed between respective two adjacent doped conductive layers and is in contact with side walls of the respective two adjacent doped conductive layer so that the majority carriers in the substrate are able to be transported into the doped conductive layers through the plurality of conductive transport layers, thereby enhancing the lateral transport capability of the majority carriers in the substrate.