A light emitting diode comprising: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer is partially exposed, wherein the first conductivity type semiconductor layer has a n-type impurity, and wherein the second conductivity type semiconductor layer has a p-type impurity; a first region having a first ion concentration of p-type impurity and provided at a region of the second conductivity type semiconductor layer; a second region having a second ion concentration of p-type impurity and provided at another region of the second conductivity type semiconductor layer; and a second electrode over the second conductivity type semiconductor layer, characterized in that: - the first region is formed at a lower ion concentration of p-type impurity than the ion concentration of p-type impurity of the second region, - the second region is formed at a higher ion concentration of p-type impurity than the ion concentration of p-type impurity of the second conductivity type semiconductor layer, and - at least one part of the first region having the first ion concentration of p-type impurity is vertically overlapped with the second electrode, - the first region having the first ion concentration of p-type impurity is a Schottky contact region and forms a current blocking layer, and - the second region having the second ion concentration of p-type impurity is an ohmic contact region. a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer is partially exposed, wherein the first conductivity type semiconductor layer has a n-type impurity, and wherein the second conductivity type semiconductor layer has a p-type impurity; a first region having a first ion concentration of p-type impurity and provided at a region of the second conductivity type semiconductor layer; a second region having a second ion concentration of p-type impurity and provided at another region of the second conductivity type semiconductor layer; and a second electrode over the second conductivity type semiconductor layer, characterized in that: - the first region is formed at a lower ion concentration of p-type impurity than the ion concentration of p-type impurity of the second region, - the second region is formed at a higher ion concentration of p-type impurity than the ion concentration of p-type impurity of the second conductivity type semiconductor layer, and - at least one part of the first region having the first ion concentration of p-type impurity is vertically overlapped with the second electrode, - the first region having the first ion concentration of p-type impurity is a Schottky contact region and forms a current blocking layer, and - the second region having the second ion concentration of p-type impurity is an ohmic contact region. - the first region is formed at a lower ion concentration of p-type impurity than the ion concentration of p-type impurity of the second region, - the second region is formed at a higher ion concentration of p-type impurity than the ion concentration of p-type impurity of the second conductivity type semiconductor layer, and - at least one part of the first region having the first ion concentration of p-type impurity is vertically overlapped with the second electrode, - the first region having the first ion concentration of p-type impurity is a Schottky contact region and forms a current blocking layer, and - the second region having the second ion concentration of p-type impurity is an ohmic contact region.