An electric power converter for a renewable power source comprising: at least one alternating current conduit (176,178,180) coupled to an external AC power device; at least one direct current conduit (114,116,118,132) coupled to an external DC power device; at least one immersion structure (222,322) defining at least one immersion cavity (226,326) therein; a plurality of semiconductor devices (200,300) comprising: a substrate (204,304) positioned within said immersion cavity (226,326), said substrate defines a plurality of heat transfer surfaces (206,207,306,307) thereon; and at least one semiconductor die (202,302) coupled to said substrate, said AC conduit, and said DC conduit; a heat removal system coupled to said at least one immersion structure (222,322), said heat removal system comprising: a vapor channel conduit positioned within said immersion cavity (226,326); a liquid return conduit positioned within said immersion cavity (226,326); and an immersion cavity exit conduit coupled in flow communication to said vapor channel conduit and said liquid return conduit; and a liquid (228,328) at least partially filling said immersion cavity (226,326) such that said semiconductor die is fully immersed in and in direct contact with said liquid, wherein heat (248,348) generated in said semiconductor device induces a phase change in said liquid to a vapor to induce a natural circulation flow (244,344) of said vapor, said vapor channel conduit configured to channel said vapor to said immersion cavity exit conduit, said immersion cavity exit conduit being coupled to an external heat exchange device which is configured to induce another phase change of the vapor back to said liquid, said liquid return conduit configured to channel said liquid to said immersion cavity (226,326). at least one alternating current conduit (176,178,180) coupled to an external AC power device; at least one direct current conduit (114,116,118,132) coupled to an external DC power device; at least one immersion structure (222,322) defining at least one immersion cavity (226,326) therein; a plurality of semiconductor devices (200,300) comprising: a substrate (204,304) positioned within said immersion cavity (226,326), said substrate defines a plurality of heat transfer surfaces (206,207,306,307) thereon; and at least one semiconductor die (202,302) coupled to said substrate, said AC conduit, and said DC conduit; a heat removal system coupled to said at least one immersion structure (222,322), said heat removal system comprising: a vapor channel conduit positioned within said immersion cavity (226,326); a liquid return conduit positioned within said immersion cavity (226,326); and an immersion cavity exit conduit coupled in flow communication to said vapor channel conduit and said liquid return conduit; and a liquid (228,328) at least partially filling said immersion cavity (226,326) such that said semiconductor die is fully immersed in and in direct contact with said liquid, wherein heat (248,348) generated in said semiconductor device induces a phase change in said liquid to a vapor to induce a natural circulation flow (244,344) of said vapor, said vapor channel conduit configured to channel said vapor to said immersion cavity exit conduit, said immersion cavity exit conduit being coupled to an external heat exchange device which is configured to induce another phase change of the vapor back to said liquid, said liquid return conduit configured to channel said liquid to said immersion cavity (226,326). a substrate (204,304) positioned within said immersion cavity (226,326), said substrate defines a plurality of heat transfer surfaces (206,207,306,307) thereon; and at least one semiconductor die (202,302) coupled to said substrate, said AC conduit, and said DC conduit; a heat removal system coupled to said at least one immersion structure (222,322), said heat removal system comprising: a vapor channel conduit positioned within said immersion cavity (226,326); a liquid return conduit positioned within said immersion cavity (226,326); and an immersion cavity exit conduit coupled in flow communication to said vapor channel conduit and said liquid return conduit; and a vapor channel conduit positioned within said immersion cavity (226,326); a liquid return conduit positioned within said immersion cavity (226,326); and an immersion cavity exit conduit coupled in flow communication to said vapor channel conduit and said liquid return conduit; and a liquid (228,328) at least partially filling said immersion cavity (226,326) such that said semiconductor die is fully immersed in and in direct contact with said liquid, wherein heat (248,348) generated in said semiconductor device induces a phase change in said liquid to a vapor to induce a natural circulation flow (244,344) of said vapor, said vapor channel conduit configured to channel said vapor to said immersion cavity exit conduit, said immersion cavity exit conduit being coupled to an external heat exchange device which is configured to induce another phase change of the vapor back to said liquid, said liquid return conduit configured to channel said liquid to said immersion cavity (226,326).