A method of producing high quality bulk silicon carbide single crystal in a seeded growth system, the method comprising: placing a seed holder that deviates from flat by no more than 10 μm in a crucible of the seeded growth system; double side lapping and polishing of a seed crystal to a shape deviating from flat by no more than 10 μm; placing the seed crystal on the seed holder in the crucible so that their respective surfaces always conform to one another within 10 μm or less; heating a silicon carbide source in the crucible to sublimation temperatures to grow the silicon carbide single crystal on the seed crystal in the crucible; and controlling a temperature profile in the crucible in a way to create an axial thermal gradient between the silicon carbide source and the growing silicon carbide single crystal while the silicon carbide source in the crucible is heated to sublimation temperatures; characterized in that the seed crystal placed on the seed holder in the crucible has a diameter from 75 mm to 100 mm; the silicon carbide single crystal is grown with the same diameter from 75 mm to 100 mm as the seed crystal; and the temperature profile in the crucible is controlled in a way to produce the axial thermal gradient and a radial thermal gradient that maintain a local temperature near, but below the sublimation temperature of silicon carbide at a growth surface of the silicon carbide single crystal during the crystal growth that is from flat to convex with a convexity not exceeding that of a curvature of 40 cm during the first 500 μm to 10 mm of crystal growth while the lapping and the polishing of the seed crystal discourages localized temperature differences across the seed crystal, thus avoiding localized regions of undesired curvature from 10 μm to 100 mm in diameter over the areas of the silicon carbide single crystal. placing a seed holder that deviates from flat by no more than 10 μm in a crucible of the seeded growth system; double side lapping and polishing of a seed crystal to a shape deviating from flat by no more than 10 μm; placing the seed crystal on the seed holder in the crucible so that their respective surfaces always conform to one another within 10 μm or less; heating a silicon carbide source in the crucible to sublimation temperatures to grow the silicon carbide single crystal on the seed crystal in the crucible; and controlling a temperature profile in the crucible in a way to create an axial thermal gradient between the silicon carbide source and the growing silicon carbide single crystal while the silicon carbide source in the crucible is heated to sublimation temperatures; characterized in that the seed crystal placed on the seed holder in the crucible has a diameter from 75 mm to 100 mm; the silicon carbide single crystal is grown with the same diameter from 75 mm to 100 mm as the seed crystal; and the temperature profile in the crucible is controlled in a way to produce the axial thermal gradient and a radial thermal gradient that maintain a local temperature near, but below the sublimation temperature of silicon carbide at a growth surface of the silicon carbide single crystal during the crystal growth that is from flat to convex with a convexity not exceeding that of a curvature of 40 cm during the first 500 μm to 10 mm of crystal growth while the lapping and the polishing of the seed crystal discourages localized temperature differences across the seed crystal, thus avoiding localized regions of undesired curvature from 10 μm to 100 mm in diameter over the areas of the silicon carbide single crystal.