A solid-state image pickup device, comprising: a first photoelectric converter formed on a front surface side opposite to a light incident surface side of a substrate; a second photoelectric converter stacked on the first photoelectric converter in a substrate depth direction; and a pixel isolation section formed at a boundary portion to an adjacent pixel, the pixel isolation section passing through the substrate, wherein the first photoelectric converter includes a first plane-direction PN junction region (42, 43) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction parallel to a light incident surface of the substrate, and a first perpendicular-direction PN junction region (61, 62) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction perpendicular to the light incident surface along a side wall of the pixel isolation section, the second photoelectric converter includes a second plane-direction PN junction region (46, 45) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction parallel to the light incident surface, and a second perpendicular-direction PN junction region (61, 63) in which a P-type impurity region and an N-type impurity region are joined with each other in the plane direction perpendicular to the light incident surface along the side wall of the pixel isolation section, an impurity region of a first conductivity type of the first perpendicular-direction PN junction region is disposed apart from an impurity region of a second conductivity type of the second plane-direction PN junction region by a first distance in the substrate depth direction, the second conductivity type being opposite to the first conductivity type, and an impurity region of the first conductivity type of the second perpendicular-direction PN junction region is disposed apart from an impurity region of the second conductivity type of a back-surface-side interface of the substrate by a second distance in the substrate depth direction. a first photoelectric converter formed on a front surface side opposite to a light incident surface side of a substrate; a second photoelectric converter stacked on the first photoelectric converter in a substrate depth direction; and a pixel isolation section formed at a boundary portion to an adjacent pixel, the pixel isolation section passing through the substrate, wherein the first photoelectric converter includes a first plane-direction PN junction region (42, 43) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction parallel to a light incident surface of the substrate, and a first perpendicular-direction PN junction region (61, 62) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction perpendicular to the light incident surface along a side wall of the pixel isolation section, the second photoelectric converter includes a second plane-direction PN junction region (46, 45) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction parallel to the light incident surface, and a second perpendicular-direction PN junction region (61, 63) in which a P-type impurity region and an N-type impurity region are joined with each other in the plane direction perpendicular to the light incident surface along the side wall of the pixel isolation section, an impurity region of a first conductivity type of the first perpendicular-direction PN junction region is disposed apart from an impurity region of a second conductivity type of the second plane-direction PN junction region by a first distance in the substrate depth direction, the second conductivity type being opposite to the first conductivity type, and an impurity region of the first conductivity type of the second perpendicular-direction PN junction region is disposed apart from an impurity region of the second conductivity type of a back-surface-side interface of the substrate by a second distance in the substrate depth direction. a second plane-direction PN junction region (46, 45) in which a P-type impurity region and an N-type impurity region are joined with each other in a plane direction parallel to the light incident surface, and a second perpendicular-direction PN junction region (61, 63) in which a P-type impurity region and an N-type impurity region are joined with each other in the plane direction perpendicular to the light incident surface along the side wall of the pixel isolation section, an impurity region of a first conductivity type of the first perpendicular-direction PN junction region is disposed apart from an impurity region of a second conductivity type of the second plane-direction PN junction region by a first distance in the substrate depth direction, the second conductivity type being opposite to the first conductivity type, and an impurity region of the first conductivity type of the second perpendicular-direction PN junction region is disposed apart from an impurity region of the second conductivity type of a back-surface-side interface of the substrate by a second distance in the substrate depth direction.