A semiconductor device (1, 2), comprising: a first base plate comprising a conductor; a first semiconductor element having a first electrode surface that is electrically joined onto the first base plate via a joining material; a second base plate comprising a conductor, the second base plate being away from the first base plate; a second semiconductor element that is adjacent to the first semiconductor element and has a first electrode surface that is electrically joined onto the second base plate via a joining material; a first lead for electrically joining a second electrode surface of the first semiconductor element and the second base plate via a joining material (62, 63); a current path member for giving and receiving current flowing through both the first semiconductor element and the second semiconductor element to and from outside, the current path member being away from both the first base plate and the second base plate; a second lead for electrically joining a second electrode surface of the second semiconductor element and the current path member via a joining material (65, 66); and a sealing material for sealing at least the respective structural members, wherein: a boundary line including a gap portion along which the first semiconductor element and the second semiconductor element are opposed to each other and extending in a direction in which both the first semiconductor element and the second semiconductor element are not opposed to each other intersects the second base plate without intersecting the first lead and the second lead; characterized in that it is such that: a rigidity of the second base plate is higher than a rigidity of the first lead and a rigidity of the second lead; the second base plate intersects a portion of the boundary line at a location other than the gap portion; the first semiconductor element and the second semiconductor element are located so as to be point symmetric with respect to the gap portion; a direction in which the first lead extends from a joining portion with the first semiconductor element is one direction in which the boundary line extends; and a direction in which the second lead extends from a joining portion with the second semiconductor element is another direction in which the boundary line extends. a first base plate comprising a conductor; a first semiconductor element having a first electrode surface that is electrically joined onto the first base plate via a joining material; a second base plate comprising a conductor, the second base plate being away from the first base plate; a second semiconductor element that is adjacent to the first semiconductor element and has a first electrode surface that is electrically joined onto the second base plate via a joining material; a first lead for electrically joining a second electrode surface of the first semiconductor element and the second base plate via a joining material (62, 63); a current path member for giving and receiving current flowing through both the first semiconductor element and the second semiconductor element to and from outside, the current path member being away from both the first base plate and the second base plate; a second lead for electrically joining a second electrode surface of the second semiconductor element and the current path member via a joining material (65, 66); and a sealing material for sealing at least the respective structural members, wherein: a boundary line including a gap portion along which the first semiconductor element and the second semiconductor element are opposed to each other and extending in a direction in which both the first semiconductor element and the second semiconductor element are not opposed to each other intersects the second base plate without intersecting the first lead and the second lead; a boundary line including a gap portion along which the first semiconductor element and the second semiconductor element are opposed to each other and extending in a direction in which both the first semiconductor element and the second semiconductor element are not opposed to each other intersects the second base plate without intersecting the first lead and the second lead; characterized in that it is such that: a rigidity of the second base plate is higher than a rigidity of the first lead and a rigidity of the second lead; the second base plate intersects a portion of the boundary line at a location other than the gap portion; the first semiconductor element and the second semiconductor element are located so as to be point symmetric with respect to the gap portion; a direction in which the first lead extends from a joining portion with the first semiconductor element is one direction in which the boundary line extends; and a direction in which the second lead extends from a joining portion with the second semiconductor element is another direction in which the boundary line extends. a rigidity of the second base plate is higher than a rigidity of the first lead and a rigidity of the second lead; the second base plate intersects a portion of the boundary line at a location other than the gap portion; the first semiconductor element and the second semiconductor element are located so as to be point symmetric with respect to the gap portion; a direction in which the first lead extends from a joining portion with the first semiconductor element is one direction in which the boundary line extends; and a direction in which the second lead extends from a joining portion with the second semiconductor element is another direction in which the boundary line extends.