A method for determining dopant concentrations in a semiconductor material sample, the sample comprising three dopants (N AF, N AP, N D) one of which is of majority type and one of minority type, two dopants of the same type having different activation energies (E AF, E AP), the method comprising the following steps: - measuring the free charge carrier concentration (p 0) in the sample at first and second temperatures for which the dopant of majority type (N AF) having the weakest activation energy (E AF) is in an ionization state; - confronting the measurements of the free charge carrier concentration (p 0) with a mathematical model of the free charge carrier concentration (p 0) versus the temperature in the ionization state; - determining the value of the activation energy (E AF) of the dopant of majority type having the weakest activation energy (E AF) and establishing a first equation between the dopant concentrations (N AF, N AP, N D) from parameters of the mathematical model; - determining an experimental value of the mobility (μ exp) of the majority charge carriers in the sample; - comparing the experimental value of the mobility (μ exp) of the majority charge carriers with a mathematical expression (μ th) of the mobility so as to establish a second equation between the dopant concentrations; - comparing the value of the activation energy (E AF) of the dopant of majority type having the weakest activation energy (E AF) with a threshold value (E AFmax) of the activation energy for said dopant; - determining the three dopant concentrations (N AF, N AP, N D) from said activation energy value (E AF), and from the first (R1, R1') and second equations, when said activation energy value (E AF) is lower than the threshold value (E AFmax); or - determining (F6') the three dopant concentrations from the first and second equations, from a third equation derived from the electro-neutrality in the semiconductor material at ambient temperature and from the free charge carrier concentration (p 0) measured at ambient temperature, when said activation energy value (E AF) is equal to the threshold value. - measuring the free charge carrier concentration (p 0) in the sample at first and second temperatures for which the dopant of majority type (N AF) having the weakest activation energy (E AF) is in an ionization state; - confronting the measurements of the free charge carrier concentration (p 0) with a mathematical model of the free charge carrier concentration (p 0) versus the temperature in the ionization state; - determining the value of the activation energy (E AF) of the dopant of majority type having the weakest activation energy (E AF) and establishing a first equation between the dopant concentrations (N AF, N AP, N D) from parameters of the mathematical model; - determining an experimental value of the mobility (μ exp) of the majority charge carriers in the sample; - comparing the experimental value of the mobility (μ exp) of the majority charge carriers with a mathematical expression (μ th) of the mobility so as to establish a second equation between the dopant concentrations; - comparing the value of the activation energy (E AF) of the dopant of majority type having the weakest activation energy (E AF) with a threshold value (E AFmax) of the activation energy for said dopant; - determining the three dopant concentrations (N AF, N AP, N D) from said activation energy value (E AF), and from the first (R1, R1') and second equations, when said activation energy value (E AF) is lower than the threshold value (E AFmax); or - determining (F6') the three dopant concentrations from the first and second equations, from a third equation derived from the electro-neutrality in the semiconductor material at ambient temperature and from the free charge carrier concentration (p 0) measured at ambient temperature, when said activation energy value (E AF) is equal to the threshold value.