A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising: (a) implanting H 2 + ions, H + ions, or a combination of H 2 + ions and H + ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H 2 + ions are implanted at a dosage between 4.3×10 15 ions/cm 2 and 1.1×10 16 ions/cm 2 at an implant energy between 10 keV and 40 keV and the H + ions are implanted at a dosage between 5×10 15 ions/cm 2 and 2×10 16 ions/cm 2 at an implant energy between 5 keV and 20 keV; (b) implanting He + ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He + ions are implanted at a dosage between 6×10 15 ions/cm 2 and 8×10 15 ions/cm 2 at an implant energy between 5 keV and 30 keV; (c) annealing the ion implanted single crystal silicon donor substrate at a temperature from 200°C to 350°C and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate; (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate; (e) annealing the multilayer substrate at a temperature from 200°C to 400°C to form a thermally activated cleave plane; and (f) cleaving the annealed multilayer substrate at the cleave plane in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between 500 Angstroms and 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate. (a) implanting H 2 + ions, H + ions, or a combination of H 2 + ions and H + ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H 2 + ions are implanted at a dosage between 4.3×10 15 ions/cm 2 and 1.1×10 16 ions/cm 2 at an implant energy between 10 keV and 40 keV and the H + ions are implanted at a dosage between 5×10 15 ions/cm 2 and 2×10 16 ions/cm 2 at an implant energy between 5 keV and 20 keV; (b) implanting He + ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He + ions are implanted at a dosage between 6×10 15 ions/cm 2 and 8×10 15 ions/cm 2 at an implant energy between 5 keV and 30 keV; (c) annealing the ion implanted single crystal silicon donor substrate at a temperature from 200°C to 350°C and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate; (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate; (e) annealing the multilayer substrate at a temperature from 200°C to 400°C to form a thermally activated cleave plane; and (f) cleaving the annealed multilayer substrate at the cleave plane in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between 500 Angstroms and 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate.