Solar cell comprising at least a first layer (3, 4', 4", 5, 6) made of a semiconductor material for absorbing photons from light radiation and releasing charge carriers, and at least one conductive layer, overlapping said first layer (3, 4', 4", 5, 6), adapted to allow said light radiation to enter into said solar cell towards said first layer (3, 4', 4", 5, 6) and to collect the charge carriers released by said first layer (3, 4', 4", 5, 6), said conductive layer comprising at least three overlapped layers (21, 22, 23), which are: - a transparent intermediate metal layer, made of metal, and - two oxide layers (21, 22), made of a transparent conductive oxide, said two oxide layers (21, 22) being respectively an inner oxide layer and an outer oxide layer surrounding said transparent intermediate metal layer so as to provide a low resistance path for the electrical charges and to maximize the amount of light radiation entering the solar cell, wherein said solar cell is a heterojunction bifacial solar cell comprising a front side and a rear side, said at least one first layer (3, 4', 4", 5, 6) comprising a first layer made of crystalline silicon, preferably n-type crystalline silicon, a second layer and a third layer (4"), said second and third layers (4', 4") being made of hydrogenated amorphous silicon, and overlapping said first layer, surrounding it, said second layer being arranged in correspondence of said front side, said third layer (4") being arranged in correspondence of said rear side, said solar cell further comprising a fourth layer made of n-type doped hydrogenated amorphous silicon, overlapping said second layer, a fifth layer made of p-type doped hydrogenated amorphous silicon, overlapping said third layer (4"), and two conductive layers of said at least one conductive layer, respectively overlapping said fourth layer and said fifth layer; said outer oxide layer of said at least one conductive layer is an outermost layer of the solar cell; wherein said transparent intermediate metal layer has a thickness between 5 nm and 7nm, said inner oxide layer has a thickness of 50 nm and said outer oxide layer has a thickness between 50 nm and 60 nm. - a transparent intermediate metal layer, made of metal, and - two oxide layers (21, 22), made of a transparent conductive oxide, said two oxide layers (21, 22) being respectively an inner oxide layer and an outer oxide layer surrounding said transparent intermediate metal layer so as to provide a low resistance path for the electrical charges and to maximize the amount of light radiation entering the solar cell, wherein said solar cell is a heterojunction bifacial solar cell comprising a front side and a rear side, said at least one first layer (3, 4', 4", 5, 6) comprising a first layer made of crystalline silicon, preferably n-type crystalline silicon, a second layer and a third layer (4"), said second and third layers (4', 4") being made of hydrogenated amorphous silicon, and overlapping said first layer, surrounding it, said second layer being arranged in correspondence of said front side, said third layer (4") being arranged in correspondence of said rear side, said solar cell further comprising a fourth layer made of n-type doped hydrogenated amorphous silicon, overlapping said second layer, a fifth layer made of p-type doped hydrogenated amorphous silicon, overlapping said third layer (4"), and two conductive layers of said at least one conductive layer, respectively overlapping said fourth layer and said fifth layer; said outer oxide layer of said at least one conductive layer is an outermost layer of the solar cell; wherein said transparent intermediate metal layer has a thickness between 5 nm and 7nm, said inner oxide layer has a thickness of 50 nm and said outer oxide layer has a thickness between 50 nm and 60 nm.