An integrated waveguide circuit filter comprising: at least two segments (SEG1-SEG4), each segment (SEG1-SEG4) comprising a top conductive layer, a bottom conductive layer and a dielectric substrate layer disposed between the top conductive layer and the bottom conductive layer, the dielectric substrate layer for a respective segment having a relative permittivity ε r that affects a tuning of the integrated waveguide circuit filter, wherein the top conductive layer and the bottom conductive layer of each segment (SEG1-SEG4) are coupled via a plurality of couplers (140, 140a) to form an outline of the integrated waveguide circuit filter for the respective segment (SEG1-SEG4); a plurality of substrate tunable vias (160, 160a) comprising a tunable material, the plurality of substrate tunable vias (160, 160a) being disposed within the dielectric substrate layer of respective segments (SEG1-SEG4), and the plurality of substrate tunable vias (160, 160a) being coupled to a respective set of electrodes to allow a voltage to be applied to the tunable material of the plurality of substrate tunable vias (160, 160a) to change the relative permittivity ε r of the dielectric substrate layer of each respective segment (SEG1-SEG4); and an iris to couple two respective segments (SEG1-SEG4) of the at least two segments (SEG1-SEG4), the iris comprising at least one iris tunable via having a tunable material disposed therein, the at least one iris tunable via being coupled to a second set of electrodes to allow the voltage to be applied to the tunable material of the at least one iris tunable via to change the relative permittivity ε r of the iris; and wherein the tunable material of one of the plurality of substrate tunable vias (160, 160a) and the at least one iris tunable via comprises a chemical composition of BaSrTiO 3 where, Ba is Barium, Sr is Strontium, and TiO 3 is Titanate comprising Titanium and Oxygen. at least two segments (SEG1-SEG4), each segment (SEG1-SEG4) comprising a top conductive layer, a bottom conductive layer and a dielectric substrate layer disposed between the top conductive layer and the bottom conductive layer, the dielectric substrate layer for a respective segment having a relative permittivity ε r that affects a tuning of the integrated waveguide circuit filter, wherein the top conductive layer and the bottom conductive layer of each segment (SEG1-SEG4) are coupled via a plurality of couplers (140, 140a) to form an outline of the integrated waveguide circuit filter for the respective segment (SEG1-SEG4); a plurality of substrate tunable vias (160, 160a) comprising a tunable material, the plurality of substrate tunable vias (160, 160a) being disposed within the dielectric substrate layer of respective segments (SEG1-SEG4), and the plurality of substrate tunable vias (160, 160a) being coupled to a respective set of electrodes to allow a voltage to be applied to the tunable material of the plurality of substrate tunable vias (160, 160a) to change the relative permittivity ε r of the dielectric substrate layer of each respective segment (SEG1-SEG4); and an iris to couple two respective segments (SEG1-SEG4) of the at least two segments (SEG1-SEG4), the iris comprising at least one iris tunable via having a tunable material disposed therein, the at least one iris tunable via being coupled to a second set of electrodes to allow the voltage to be applied to the tunable material of the at least one iris tunable via to change the relative permittivity ε r of the iris; and wherein the tunable material of one of the plurality of substrate tunable vias (160, 160a) and the at least one iris tunable via comprises a chemical composition of BaSrTiO 3 where, Ba is Barium, Sr is Strontium, and TiO 3 is Titanate comprising Titanium and Oxygen.