A three-dimensional structure, characterized in that the three-dimensional structure comprising: a composite film layer (124, 200, 240), comprising: a first photoresist layer derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density; and at least a second photoresist layer (214, 242) derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density, wherein the second chemical property is different from the first chemical property, and wherein the composite film layer (124, 200, 240) is configured to have varying mechanical and/or physical properties through a thickness of the three-dimensional structure, wherein the three-dimensional structure is characterized in that, the first photoresist layer has a first photoacid generator configured to be exposed by a first radiation, the second photoresist layer (214, 242) has a second photoacid generator configured to be exposed by a second radiation, and an exposure wavelength of the first radiation is different from an exposure wavelength of the second radiation. a composite film layer (124, 200, 240), comprising: a first photoresist layer derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density; and at least a second photoresist layer (214, 242) derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density, wherein the second chemical property is different from the first chemical property, and a first photoresist layer derived from a photoresist resin having a first chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density; and at least a second photoresist layer (214, 242) derived from a photoresist resin having a second chemical property selected from a group consisting of epoxide equivalent weight, aromatic content, and crosslink density, wherein the second chemical property is different from the first chemical property, and wherein the composite film layer (124, 200, 240) is configured to have varying mechanical and/or physical properties through a thickness of the three-dimensional structure, wherein the three-dimensional structure is characterized in that, the first photoresist layer has a first photoacid generator configured to be exposed by a first radiation, the second photoresist layer (214, 242) has a second photoacid generator configured to be exposed by a second radiation, and an exposure wavelength of the first radiation is different from an exposure wavelength of the second radiation. the first photoresist layer has a first photoacid generator configured to be exposed by a first radiation, the second photoresist layer (214, 242) has a second photoacid generator configured to be exposed by a second radiation, and an exposure wavelength of the first radiation is different from an exposure wavelength of the second radiation.