A method of forming a memory cell, comprising: forming a first oxide layer on an upper surface of a semiconductor substrate; forming a first polysilicon block on the first oxide layer, wherein the first polysilicon block includes a top surface and a side surface, and wherein the top surface terminates at the side surface in a sharp edge; forming a second oxide layer by performing a first oxide deposition, wherein the second oxide layer includes a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge; performing an etch that thins the first, second and third portions of the second oxide layer in a non-uniform manner such that the third portion of the second oxide layer is thinner than the first and second portions of the second oxide layer; performing a second oxide deposition that thickens the first, second and third portions of the second oxide layer, wherein after the second oxide deposition, the third portion of the second oxide layer is thinner than the first and second portions of the second oxide layer; forming a second polysilicon block having a first portion directly on the first portion of the second oxide layer and a second portion directly on the third portion of the second oxide layer; and forming a source region and a drain region in the semiconductor substrate, which define a channel region of the semiconductor substrate therebetween, wherein the first polysilicon block is disposed over a first portion of the channel region and the first portion of the second polysilicon block is disposed over a second portion of the channel region. forming a first oxide layer on an upper surface of a semiconductor substrate; forming a first polysilicon block on the first oxide layer, wherein the first polysilicon block includes a top surface and a side surface, and wherein the top surface terminates at the side surface in a sharp edge; forming a second oxide layer by performing a first oxide deposition, wherein the second oxide layer includes a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge; performing an etch that thins the first, second and third portions of the second oxide layer in a non-uniform manner such that the third portion of the second oxide layer is thinner than the first and second portions of the second oxide layer; performing a second oxide deposition that thickens the first, second and third portions of the second oxide layer, wherein after the second oxide deposition, the third portion of the second oxide layer is thinner than the first and second portions of the second oxide layer; forming a second polysilicon block having a first portion directly on the first portion of the second oxide layer and a second portion directly on the third portion of the second oxide layer; and forming a source region and a drain region in the semiconductor substrate, which define a channel region of the semiconductor substrate therebetween, wherein the first polysilicon block is disposed over a first portion of the channel region and the first portion of the second polysilicon block is disposed over a second portion of the channel region.