A range image sensor comprising: a silicon substrate provided with an imaging region including a plurality of units disposed one-dimensionally or two-dimensionally, wherein each of the units is a range sensor, the range sensor includes a silicon substrate including a first principal surface and a second principal surface opposing each other, and provided with a charge generation region configured to generate a charge in response to incident light, a charge collection region (FD1, FD2) configured to collect the charge from the charge generation region, and an unnecessary-charge collection region (FD31,FD32, FD3) configured to collect an unnecessary charge from the charge generation region, on the first principal surface side, a transfer electrode (TX1, TX2) disposed between the charge generation region and the charge collection region on the first principal surface, and configured to cause the charge to flow from the charge generation region into the charge collection region in response to an inputted signal, and an unnecessary-charge transfer electrode (TX31, TX32, TX3) disposed between the charge generation region and the unnecessary-charge collection region on the first principal surface, and configured to cause the unnecessary charge to flow from the charge generation region into the unnecessary-charge collection region in response to an inputted signal, a region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions including a slope inclined with respect to a thickness direction of the silicon substrate, a plane of the silicon substrate is exposed as the slope at the protrusion, a height of the protrusion is equal to or more than 200 nm, the transfer electrode has an approximately ring shape and is disposed to surround the charge collection region when viewed from a direction orthogonal to the first principal surface, the charge generation region has an approximately ring shape and is disposed to surround the transfer electrode when viewed from the direction orthogonal to the first principal surface, the unnecessary-charge transfer electrode has an approximately ring shape and is disposed to surround the charge generation region when viewed from the direction orthogonal to the first principal surface, and the unnecessary-charge collection region has an approximately ring shape and is disposed to surround the unnecessary-charge transfer electrode when viewed from the direction orthogonal to the first principal surface. a silicon substrate including a first principal surface and a second principal surface opposing each other, and provided with a charge generation region configured to generate a charge in response to incident light, a charge collection region (FD1, FD2) configured to collect the charge from the charge generation region, and an unnecessary-charge collection region (FD31,FD32, FD3) configured to collect an unnecessary charge from the charge generation region, on the first principal surface side, a transfer electrode (TX1, TX2) disposed between the charge generation region and the charge collection region on the first principal surface, and configured to cause the charge to flow from the charge generation region into the charge collection region in response to an inputted signal, and an unnecessary-charge transfer electrode (TX31, TX32, TX3) disposed between the charge generation region and the unnecessary-charge collection region on the first principal surface, and configured to cause the unnecessary charge to flow from the charge generation region into the unnecessary-charge collection region in response to an inputted signal, a region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions including a slope inclined with respect to a thickness direction of the silicon substrate, a plane of the silicon substrate is exposed as the slope at the protrusion, a height of the protrusion is equal to or more than 200 nm, the transfer electrode has an approximately ring shape and is disposed to surround the charge collection region when viewed from a direction orthogonal to the first principal surface, the charge generation region has an approximately ring shape and is disposed to surround the transfer electrode when viewed from the direction orthogonal to the first principal surface, the unnecessary-charge transfer electrode has an approximately ring shape and is disposed to surround the charge generation region when viewed from the direction orthogonal to the first principal surface, and the unnecessary-charge collection region has an approximately ring shape and is disposed to surround the unnecessary-charge transfer electrode when viewed from the direction orthogonal to the first principal surface.