A semiconductor structure comprising: a deep trench located in a semiconductor substrate and having a bottom surface located at a first depth from a top surface of said semiconductor substrate; a node dielectric abutting sidewalls and said bottom surface of said deep trench; a conductive inner electrode located inside said node dielectric; a first doped well extending from said top surface of said semiconductor substrate to a second depth, located outside said deep trench, and abutting and laterally enclosing said node dielectric, wherein said second depth is less than said first depth; a second doped well located in said semiconductor substrate and extending from said second depth to a third depth, wherein said second doped well is located outside said deep trench and abuts and laterally encloses said node dielectric, wherein said third depth is greater than said second depth and is less than said first depth, said second doping well having one of a different dopant concentration and a doping of a different conductivity type to said first doping well; a third doped well located in said semiconductor substrate and extending from said third depth to a fourth depth, wherein said third doped well is located outside said deep trench and abuts and laterally encloses said node dielectric, wherein said fourth depth is greater than said third depth and is less than said first depth, wherein said third doped well has one of a different dopant concentration and a different doping conductivity type than said second doped well, and wherein said third doped well has one of a different dopant concentration and a different doping conductivity type than said first doped well; a semiconductor region having one of a different dopant concentration and a doping of a different conductivity type to said first doped well, located in said semiconductor substrate, and abutting and laterally enclosing an entirety of a lower portion of said deep trench beneath a depth from said top surface of said semiconductor substrate, wherein said depth is less than said first depth; and a first contact vertically abutting a top surface of said conductive inner electrode; characterised by a second contact vertically abutting said first doped well; a first conductive reachthrough region extending from said top surface of said semiconductor substrate to said second doped well; a third contact vertically abutting said first conductive reachthrough region; a second conductive reachthrough region extending from said top surface of said semiconductor substrate to said third doped well; and a fourth contact vertically abutting said second conductive reachthrough region, wherein said fourth contact, said third contact, and said second contact are electrically shorted by a metal interconnect structure. a deep trench located in a semiconductor substrate and having a bottom surface located at a first depth from a top surface of said semiconductor substrate; a node dielectric abutting sidewalls and said bottom surface of said deep trench; a conductive inner electrode located inside said node dielectric; a first doped well extending from said top surface of said semiconductor substrate to a second depth, located outside said deep trench, and abutting and laterally enclosing said node dielectric, wherein said second depth is less than said first depth; a second doped well located in said semiconductor substrate and extending from said second depth to a third depth, wherein said second doped well is located outside said deep trench and abuts and laterally encloses said node dielectric, wherein said third depth is greater than said second depth and is less than said first depth, said second doping well having one of a different dopant concentration and a doping of a different conductivity type to said first doping well; a third doped well located in said semiconductor substrate and extending from said third depth to a fourth depth, wherein said third doped well is located outside said deep trench and abuts and laterally encloses said node dielectric, wherein said fourth depth is greater than said third depth and is less than said first depth, wherein said third doped well has one of a different dopant concentration and a different doping conductivity type than said second doped well, and wherein said third doped well has one of a different dopant concentration and a different doping conductivity type than said first doped well; a semiconductor region having one of a different dopant concentration and a doping of a different conductivity type to said first doped well, located in said semiconductor substrate, and abutting and laterally enclosing an entirety of a lower portion of said deep trench beneath a depth from said top surface of said semiconductor substrate, wherein said depth is less than said first depth; and a first contact vertically abutting a top surface of said conductive inner electrode; characterised by a second contact vertically abutting said first doped well; a first conductive reachthrough region extending from said top surface of said semiconductor substrate to said second doped well; a third contact vertically abutting said first conductive reachthrough region; a second conductive reachthrough region extending from said top surface of said semiconductor substrate to said third doped well; and a fourth contact vertically abutting said second conductive reachthrough region, wherein said fourth contact, said third contact, and said second contact are electrically shorted by a metal interconnect structure.