A solar cell, comprising: a semiconductor substrate; a first semiconductor layer of first conductivity type formed on a first region on one main surface of the semiconductor substrate; and a second semiconductor layer of second conductivity type formed on a second region on the one main surface of the semiconductor substrate; wherein: the second semiconductor layer is formed to extend over the second region and the first semiconductor layer, and on the first region, a recombination layer inserted between the first semiconductor layer and the second semiconductor layer is provided; wherein the solar cell further comprises: a first electrode, on the first region; and a second electrode formed on the second semiconductor layer, on the second region; wherein the first electrode is connected to the first semiconductor layer, with the recombination layer being interposed; characterized in that: the first electrode is formed on the second semiconductor layer, on the first region; and the recombination layer is formed by a semiconductor material in which many in-gap levels exist in an energy band, or a metal material in an ohmic contact with the first semiconductor layer. a semiconductor substrate; a first semiconductor layer of first conductivity type formed on a first region on one main surface of the semiconductor substrate; and a second semiconductor layer of second conductivity type formed on a second region on the one main surface of the semiconductor substrate; wherein: the second semiconductor layer is formed to extend over the second region and the first semiconductor layer, and on the first region, a recombination layer inserted between the first semiconductor layer and the second semiconductor layer is provided; wherein the solar cell further comprises: a first electrode, on the first region; and a second electrode formed on the second semiconductor layer, on the second region; wherein the first electrode is connected to the first semiconductor layer, with the recombination layer being interposed; characterized in that: the first electrode is formed on the second semiconductor layer, on the first region; and the recombination layer is formed by a semiconductor material in which many in-gap levels exist in an energy band, or a metal material in an ohmic contact with the first semiconductor layer. the second semiconductor layer is formed to extend over the second region and the first semiconductor layer, and on the first region, a recombination layer inserted between the first semiconductor layer and the second semiconductor layer is provided; wherein the solar cell further comprises: a first electrode, on the first region; and a second electrode formed on the second semiconductor layer, on the second region; wherein the first electrode is connected to the first semiconductor layer, with the recombination layer being interposed; characterized in that: the first electrode is formed on the second semiconductor layer, on the first region; and the recombination layer is formed by a semiconductor material in which many in-gap levels exist in an energy band, or a metal material in an ohmic contact with the first semiconductor layer. a first electrode, on the first region; and a second electrode formed on the second semiconductor layer, on the second region; wherein the first electrode is connected to the first semiconductor layer, with the recombination layer being interposed; characterized in that: the first electrode is formed on the second semiconductor layer, on the first region; and the recombination layer is formed by a semiconductor material in which many in-gap levels exist in an energy band, or a metal material in an ohmic contact with the first semiconductor layer. the first electrode is formed on the second semiconductor layer, on the first region; and the recombination layer is formed by a semiconductor material in which many in-gap levels exist in an energy band, or a metal material in an ohmic contact with the first semiconductor layer.