A semiconductor light emitting device comprising: a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer formed sequentially on the top surface of the substrate, wherein a region between the light emitting cells is defined as an isolation region by layer removal to at least the active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell; wherein the light emitting cells comprise at least one defective light emitting cell (Co) and at least one of the connection parts related to the defective light emitting cell (Co) is disconnected, and wherein the light emitting cells are arrayed in a plurality of columns and rows; and characterized in that the plurality of connection parts is formed on the top surface of the substrate; the light emitting cells located in each column are divided into a plurality of groups each having two or more light emitting cells only connected to each other in series, and the light emitting cells of the groups are formed such that the electrodes of the same polarity face each other in the light emitting cells of the adjacent groups; and the semiconductor light emitting device further comprises an intermediate connection part (138a', 138b') formed to connect the at least two groups each included in different columns in a row direction, wherein the intermediate connection part connects (138a', 138b') common polarities of the light emitting cells in each group. a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer formed sequentially on the top surface of the substrate, wherein a region between the light emitting cells is defined as an isolation region by layer removal to at least the active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell; wherein the light emitting cells comprise at least one defective light emitting cell (Co) and at least one of the connection parts related to the defective light emitting cell (Co) is disconnected, and wherein the light emitting cells are arrayed in a plurality of columns and rows; and the plurality of connection parts is formed on the top surface of the substrate; the light emitting cells located in each column are divided into a plurality of groups each having two or more light emitting cells only connected to each other in series, and the light emitting cells of the groups are formed such that the electrodes of the same polarity face each other in the light emitting cells of the adjacent groups; and the semiconductor light emitting device further comprises an intermediate connection part (138a', 138b') formed to connect the at least two groups each included in different columns in a row direction, wherein the intermediate connection part connects (138a', 138b') common polarities of the light emitting cells in each group.