A semiconductor light emitting device, comprising: a plurality of compound semiconductor layers supported by a conductive support member and including a first conductivity type semiconductor layer (110, 111), an active layer (120, 121) on the first conductivity type semiconductor layer (110, 111) and a second conductivity type semiconductor layer (130, 131) on the active layer (120, 121); a bond pad under the first conductivity type semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a ring-shaped or frame-shaped insulating layer formed on the peripheral portion of the top surface of the second conductivity type semiconductor layer on the plurality of compound semiconductor layers, wherein the insulating layer has a ring-shaped protrusion dividing the plurality of compound semiconductor layers into an active area within said ring-shaped protrusion and a non-active area outside said ring-shaped protrusion, the semiconductor light emitting device further comprising a shock supporting member including a metallic material, having a minimum thickness of at least 1 μm and being disposed on the electrode layer in a position corresponding to a position of the pad, the shock supporting member being configured to absorb a shock transmitted from the bond pad, wherein the conductive support member is formed on the electrode layer and the shock supporting member, wherein the conductive support member is in direct contact with the electrode layer and the shock supporting member, and wherein the shock supporting member is formed between the electrode layer and the conductive support member. a plurality of compound semiconductor layers supported by a conductive support member and including a first conductivity type semiconductor layer (110, 111), an active layer (120, 121) on the first conductivity type semiconductor layer (110, 111) and a second conductivity type semiconductor layer (130, 131) on the active layer (120, 121); a bond pad under the first conductivity type semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a ring-shaped or frame-shaped insulating layer formed on the peripheral portion of the top surface of the second conductivity type semiconductor layer on the plurality of compound semiconductor layers, wherein the insulating layer has a ring-shaped protrusion dividing the plurality of compound semiconductor layers into an active area within said ring-shaped protrusion and a non-active area outside said ring-shaped protrusion, the semiconductor light emitting device further comprising a shock supporting member including a metallic material, having a minimum thickness of at least 1 μm and being disposed on the electrode layer in a position corresponding to a position of the pad, the shock supporting member being configured to absorb a shock transmitted from the bond pad, wherein the conductive support member is formed on the electrode layer and the shock supporting member, wherein the conductive support member is in direct contact with the electrode layer and the shock supporting member, and wherein the shock supporting member is formed between the electrode layer and the conductive support member.