A semiconductor device comprising: an electrically conductive substrate layer; a drain contact, wherein said substrate layer is separated from said drain contact by an intervening layer; a plurality of gate trenches in a gate region under a layer of source metal and that extend into but not completely through said intervening layer, said plurality of gate trenches comprising a first gate trench and a second gate trench, said plurality of gate trenches filled with a first filler material; a plurality of source contact trenches in a source region under said layer of source metal and that extend into but not completely through said intervening layer,said plurality of source contact trenches comprising a first source contact trench and a second source contact trench, wherein said first source contact trench is between said first gate trench and said second gate trench, and wherein said second gate trench is between said first source contact trench and said second source contact trench, said plurality of source contact trenches filled with a second filler material, wherein said first filler material comprises polysilicon and said second filler material comprises tungsten; and a plurality of feed-through trenches under a layer of drain metal and that extend completely through said intervening layer and are filled with said second filler material coupled to said drain contact, said second filler material in said feed-through trenches providing an electrical connection between said drain metal and said substrate layer, each of said feed-through trenches filled with said second filler material, wherein said plurality of feed-through trenches are arrayed in only a portion of a drain region of said device under said drain contact between said drain contact and said substrate layer, wherein said plurality of feed-through trenches are not included under said layer of drain metal outside said portion and wherein said feed-through trenches within said portion are concentrated toward said source region. an electrically conductive substrate layer; a drain contact, wherein said substrate layer is separated from said drain contact by an intervening layer; a plurality of gate trenches in a gate region under a layer of source metal and that extend into but not completely through said intervening layer, said plurality of gate trenches comprising a first gate trench and a second gate trench, said plurality of gate trenches filled with a first filler material; a plurality of source contact trenches in a source region under said layer of source metal and that extend into but not completely through said intervening layer,said plurality of source contact trenches comprising a first source contact trench and a second source contact trench, wherein said first source contact trench is between said first gate trench and said second gate trench, and wherein said second gate trench is between said first source contact trench and said second source contact trench, said plurality of source contact trenches filled with a second filler material, wherein said first filler material comprises polysilicon and said second filler material comprises tungsten; and a plurality of feed-through trenches under a layer of drain metal and that extend completely through said intervening layer and are filled with said second filler material coupled to said drain contact, said second filler material in said feed-through trenches providing an electrical connection between said drain metal and said substrate layer, each of said feed-through trenches filled with said second filler material, wherein said plurality of feed-through trenches are arrayed in only a portion of a drain region of said device under said drain contact between said drain contact and said substrate layer, wherein said plurality of feed-through trenches are not included under said layer of drain metal outside said portion and wherein said feed-through trenches within said portion are concentrated toward said source region.