A method for manufacturing a structure (410, 410', 410", 420, 430) comprising: a) the provision of a donor substrate comprising a front face and a rear face and comprising a buried stop layer and a fine active layer having a first thickness, between the front face of the substrate and the stop layer; b) the provision of a support substrate; c) the formation of an intermediate layer on the front face of the donor substrate or on the support substrate; d) the assembly of the donor substrate and support substrate in order to dispose the intermediate layer between the two substrates; e) the thinning of the rear face of the donor substrate in order to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; f) after step e), the local removal, in first regions of the structure (410, 410', 410", 420, 430), of a thick active layer delimited by the second free face of the useful layer and the stop layer, the buried stop layer being continuous over the entire extent of the structure when said removal in first regions is performed; g) the etching of the stop layer so that the useful layer comprises only the fine active layer in the first regions; the method further comprising • the etching of the first thickness of the fine active layer in first patterns, in the first regions; • the etching of the useful thickness of the useful layer in second patterns, in second regions; • the removal of the intermediate layer in at least part of the first regions and second regions of the structure, in order to release at least one membrane of the fine active layer for producing a suspended part of a NEMS component, and at least one membrane of the useful layer for producing a suspended part of MEMS component. a) the provision of a donor substrate comprising a front face and a rear face and comprising a buried stop layer and a fine active layer having a first thickness, between the front face of the substrate and the stop layer; b) the provision of a support substrate; c) the formation of an intermediate layer on the front face of the donor substrate or on the support substrate; d) the assembly of the donor substrate and support substrate in order to dispose the intermediate layer between the two substrates; e) the thinning of the rear face of the donor substrate in order to form a useful layer of a useful thickness having a first face disposed on the intermediate layer and a second free face; f) after step e), the local removal, in first regions of the structure (410, 410', 410", 420, 430), of a thick active layer delimited by the second free face of the useful layer and the stop layer, the buried stop layer being continuous over the entire extent of the structure when said removal in first regions is performed; g) the etching of the stop layer so that the useful layer comprises only the fine active layer in the first regions; • the etching of the first thickness of the fine active layer in first patterns, in the first regions; • the etching of the useful thickness of the useful layer in second patterns, in second regions; • the removal of the intermediate layer in at least part of the first regions and second regions of the structure, in order to release at least one membrane of the fine active layer for producing a suspended part of a NEMS component, and at least one membrane of the useful layer for producing a suspended part of MEMS component.