A electronic circuit comprising: an elastic substrate; and a stretchable metallic or semiconducting device component supported by said elastic substrate; said stretchable metallic or semiconducting device component comprising a plurality of electrically conductive elements each having a primary unit cell shape, said electrically conductive elements connected in a sequence having a secondary shape providing an overall two-dimensional spatial geometry characterized by a plurality of spatial frequencies, wherein said two-dimensional spatial geometry is a self-similar two-dimensional spatial geometry and is characterized by a first spatial frequency having a first length scale corresponding to said primary unit cell shape and a second spatial frequency having a second length scale corresponding to said secondary shape, wherein said first length scale of said first spatial frequency is selected from the range of 100 nm to 1 mm and wherein said second length scale of said second spatial frequency is selected from the range of 1 micron to 10 mm; wherein said two-dimensional spatial geometry of said metallic or semiconducting device component allows for accommodation of elastic strain along one or more in-plane or out of plane dimensions, thereby providing stretchability of said electronic circuit, and wherein said two-dimensional spatial geometry allows said metallic or semiconducting device component to undergo elastic deformation, characterized in that: said sequence of electrically conductive elements is further characterized by a tertiary shape comprising a repeating series of said electrically conductive elements comprising said secondary shape. an elastic substrate; and a stretchable metallic or semiconducting device component supported by said elastic substrate; said stretchable metallic or semiconducting device component comprising a plurality of electrically conductive elements each having a primary unit cell shape, said electrically conductive elements connected in a sequence having a secondary shape providing an overall two-dimensional spatial geometry characterized by a plurality of spatial frequencies, wherein said two-dimensional spatial geometry is a self-similar two-dimensional spatial geometry and is characterized by a first spatial frequency having a first length scale corresponding to said primary unit cell shape and a second spatial frequency having a second length scale corresponding to said secondary shape, wherein said first length scale of said first spatial frequency is selected from the range of 100 nm to 1 mm and wherein said second length scale of said second spatial frequency is selected from the range of 1 micron to 10 mm; wherein said two-dimensional spatial geometry of said metallic or semiconducting device component allows for accommodation of elastic strain along one or more in-plane or out of plane dimensions, thereby providing stretchability of said electronic circuit, and wherein said two-dimensional spatial geometry allows said metallic or semiconducting device component to undergo elastic deformation, characterized in that: said sequence of electrically conductive elements is further characterized by a tertiary shape comprising a repeating series of said electrically conductive elements comprising said secondary shape.