A method for manufacturing a display panel, wherein the display panel comprises a display area, a holing area and an isolation area, and the isolation area is disposed between the display area and the holing area, and the isolation area at least partially surrounds the holing area, wherein the method comprises: forming a support layer on a substrate, wherein the support layer is disposed in the holing area and the isolation area, the support layer comprises a first support sub-layer and a second support sub-layer, a projection of the first support sub-layer on the substrate is located in the holing area, and a projection of the second support sub-layer on the substrate is located in the isolation area; forming a first blocking layer on the support layer, wherein the first blocking layer comprises a first blocking sub-layer and a second blocking sub-layer, the first blocking sub-layer is disposed on the first support sub-layer, and the second blocking sub-layer is disposed on a grooving portion of the second support sub-layer; etching the second blocking sub-layer to expose the grooving portion; at least etching the grooving portion to obtain grooves and isolation columns, wherein the isolation columns and the grooves are distributed alternately, wherein at least etching the grooving portion to obtain the grooves and the isolation columns comprises: dry etching the grooving portion of the second support sub-layer by using a first mixed gas mixed by a first gas and a second gas, wherein a composition ratio of the first gas to the second gas in the first mixed gas is 2:1 -10:1; the substrate comprising an organic layer, and dry etching the grooving portion corresponding to the organic layer of the substrate by using a second mixed gas mixed by the first gas and the second gas, wherein a composition ratio of the first gas to the second gas in the second mixed gas is 1:4-1:10, and wherein the first gas comprises at least one of carbon tetrafluoride (CF 4) and sulfur tetrafluoride (SF 4), and the second gas is oxygen. forming a support layer on a substrate, wherein the support layer is disposed in the holing area and the isolation area, the support layer comprises a first support sub-layer and a second support sub-layer, a projection of the first support sub-layer on the substrate is located in the holing area, and a projection of the second support sub-layer on the substrate is located in the isolation area; forming a first blocking layer on the support layer, wherein the first blocking layer comprises a first blocking sub-layer and a second blocking sub-layer, the first blocking sub-layer is disposed on the first support sub-layer, and the second blocking sub-layer is disposed on a grooving portion of the second support sub-layer; etching the second blocking sub-layer to expose the grooving portion; at least etching the grooving portion to obtain grooves and isolation columns, wherein the isolation columns and the grooves are distributed alternately, wherein at least etching the grooving portion to obtain the grooves and the isolation columns comprises: dry etching the grooving portion of the second support sub-layer by using a first mixed gas mixed by a first gas and a second gas, wherein a composition ratio of the first gas to the second gas in the first mixed gas is 2:1 -10:1; the substrate comprising an organic layer, and dry etching the grooving portion corresponding to the organic layer of the substrate by using a second mixed gas mixed by the first gas and the second gas, wherein a composition ratio of the first gas to the second gas in the second mixed gas is 1:4-1:10, and wherein the first gas comprises at least one of carbon tetrafluoride (CF 4) and sulfur tetrafluoride (SF 4), and the second gas is oxygen. dry etching the grooving portion of the second support sub-layer by using a first mixed gas mixed by a first gas and a second gas, wherein a composition ratio of the first gas to the second gas in the first mixed gas is 2:1 -10:1; the substrate comprising an organic layer, and dry etching the grooving portion corresponding to the organic layer of the substrate by using a second mixed gas mixed by the first gas and the second gas, wherein a composition ratio of the first gas to the second gas in the second mixed gas is 1:4-1:10, and wherein the first gas comprises at least one of carbon tetrafluoride (CF 4) and sulfur tetrafluoride (SF 4), and the second gas is oxygen.