An imaging device, comprising: a first pixel including: a first photoelectric conversion region that converts first incident light into first electric charges; a first readout circuit coupled to the first photoelectric conversion region at a first location; and a second readout circuit including a portion coupled to the first photoelectric conversion region at a second location, the second readout circuit being configured to control the first readout circuit based on charge generated by the first photoelectric conversion region, wherein the first location and the second location are on a same first side of the first photoelectric conversion region when viewed in a plan view; and a second pixel adjacent to the first pixel in a first direction and including: a second photoelectric conversion region that converts second incident light into second electric charges, wherein the first and second photoelectric conversion regions are linearly arranged in the first direction; a third readout circuit coupled to the second photoelectric conversion region at a third location; and a fourth readout circuit including a portion coupled to the second photoelectric conversion region at a fourth location, the fourth readout circuit being configured to control the third readout circuit based on charge generated by the second photoelectric conversion region, wherein the third location and the fourth location are on a same second side of the second photoelectric conversion region when viewed in a plan view, wherein the first readout circuit and the second readout circuit are located at opposite sides of the second photoelectric conversion region in a second direction perpendicular to the first direction. a first photoelectric conversion region that converts first incident light into first electric charges; a first readout circuit coupled to the first photoelectric conversion region at a first location; and a second readout circuit including a portion coupled to the first photoelectric conversion region at a second location, the second readout circuit being configured to control the first readout circuit based on charge generated by the first photoelectric conversion region, wherein the first location and the second location are on a same first side of the first photoelectric conversion region when viewed in a plan view; and a second pixel adjacent to the first pixel in a first direction and including: a second photoelectric conversion region that converts second incident light into second electric charges, wherein the first and second photoelectric conversion regions are linearly arranged in the first direction; a third readout circuit coupled to the second photoelectric conversion region at a third location; and a fourth readout circuit including a portion coupled to the second photoelectric conversion region at a fourth location, the fourth readout circuit being configured to control the third readout circuit based on charge generated by the second photoelectric conversion region, wherein the third location and the fourth location are on a same second side of the second photoelectric conversion region when viewed in a plan view, wherein the first readout circuit and the second readout circuit are located at opposite sides of the second photoelectric conversion region in a second direction perpendicular to the first direction. a second photoelectric conversion region that converts second incident light into second electric charges, wherein the first and second photoelectric conversion regions are linearly arranged in the first direction; a third readout circuit coupled to the second photoelectric conversion region at a third location; and a fourth readout circuit including a portion coupled to the second photoelectric conversion region at a fourth location, the fourth readout circuit being configured to control the third readout circuit based on charge generated by the second photoelectric conversion region, wherein the third location and the fourth location are on a same second side of the second photoelectric conversion region when viewed in a plan view, wherein the first readout circuit and the second readout circuit are located at opposite sides of the second photoelectric conversion region in a second direction perpendicular to the first direction.