An apparatus comprising: means for generating at least one input signal having a voltage range; an input stage (110, 110a, 110c) adapted to receive the at least one input signal (V in), the input stage comprising: means (210, 410, 510) for generating at least one first intermediate signal having a first voltage range said at least one first intermediate signal being based on the at least one input signal; means (220, 420, 520) for generating at least one second intermediate signal having a second voltage range said at least one second intermediate signal being based on the at least one input signal; the apparatus further comprising: means (230, 232, 430, 530a) for processing the at least one first intermediate signal based on a logic function to obtain a first drive signal having the first voltage range; means (240, 242, 440, 530b) for processing the at least one second intermediate signal based on the logic function to obtain a second drive signal having the second voltage range, wherein the difference between the maximum voltage and the minimum voltage of the voltage range of the at least one input signal exceeds the breakdown voltage of metal oxide semiconductor, MOS, transistors configured to implement the logic function, and wherein the respective difference between the maximum voltage and the minimum voltage of the first and second voltage ranges is less than the breakdown voltage; and means (130, 130a, 130d) for generating an output signal having a third voltage range based on the first and second drive signals, the third voltage range being larger than each of the first and second voltage ranges. means for generating at least one input signal having a voltage range; an input stage (110, 110a, 110c) adapted to receive the at least one input signal (V in), the input stage comprising: means (210, 410, 510) for generating at least one first intermediate signal having a first voltage range said at least one first intermediate signal being based on the at least one input signal; means (220, 420, 520) for generating at least one second intermediate signal having a second voltage range said at least one second intermediate signal being based on the at least one input signal; the apparatus further comprising: means (230, 232, 430, 530a) for processing the at least one first intermediate signal based on a logic function to obtain a first drive signal having the first voltage range; means (240, 242, 440, 530b) for processing the at least one second intermediate signal based on the logic function to obtain a second drive signal having the second voltage range, wherein the difference between the maximum voltage and the minimum voltage of the voltage range of the at least one input signal exceeds the breakdown voltage of metal oxide semiconductor, MOS, transistors configured to implement the logic function, and wherein the respective difference between the maximum voltage and the minimum voltage of the first and second voltage ranges is less than the breakdown voltage; and means (130, 130a, 130d) for generating an output signal having a third voltage range based on the first and second drive signals, the third voltage range being larger than each of the first and second voltage ranges. means (210, 410, 510) for generating at least one first intermediate signal having a first voltage range said at least one first intermediate signal being based on the at least one input signal; means (220, 420, 520) for generating at least one second intermediate signal having a second voltage range said at least one second intermediate signal being based on the at least one input signal; the apparatus further comprising: means (230, 232, 430, 530a) for processing the at least one first intermediate signal based on a logic function to obtain a first drive signal having the first voltage range; means (240, 242, 440, 530b) for processing the at least one second intermediate signal based on the logic function to obtain a second drive signal having the second voltage range, wherein the difference between the maximum voltage and the minimum voltage of the voltage range of the at least one input signal exceeds the breakdown voltage of metal oxide semiconductor, MOS, transistors configured to implement the logic function, and wherein the respective difference between the maximum voltage and the minimum voltage of the first and second voltage ranges is less than the breakdown voltage; and means (130, 130a, 130d) for generating an output signal having a third voltage range based on the first and second drive signals, the third voltage range being larger than each of the first and second voltage ranges. means (230, 232, 430, 530a) for processing the at least one first intermediate signal based on a logic function to obtain a first drive signal having the first voltage range; means (240, 242, 440, 530b) for processing the at least one second intermediate signal based on the logic function to obtain a second drive signal having the second voltage range, wherein the difference between the maximum voltage and the minimum voltage of the voltage range of the at least one input signal exceeds the breakdown voltage of metal oxide semiconductor, MOS, transistors configured to implement the logic function, and wherein the respective difference between the maximum voltage and the minimum voltage of the first and second voltage ranges is less than the breakdown voltage; and means (130, 130a, 130d) for generating an output signal having a third voltage range based on the first and second drive signals, the third voltage range being larger than each of the first and second voltage ranges.