A light emitting device comprising: a substrate; a light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the first conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers; a first electrode on the light emitting structure; and characterized in that: a light transmitting layer on the light emitting structure; and further comprising a patterned phosphor layer on the light transmitting layer, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the first electrode is an electrically connected line pattern, wherein the light transmitting layer is thicker than the first electrode, wherein the light transmitting layer is patterned to expose a portion of the first electrode, wherein the pattern of the phosphor layer exposes the first electrode, wherein the line pattern of the first electrode is exposed between or in the openings of the patterned light transmitting layer and the first electrode is spaced apart from the patterned phosphor layer which is disposed on the patterned light transmitting layer. a substrate; a light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the first conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers; a first electrode on the light emitting structure; and characterized in that: a light transmitting layer on the light emitting structure; and further comprising a patterned phosphor layer on the light transmitting layer, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the first electrode is an electrically connected line pattern, wherein the light transmitting layer is thicker than the first electrode, wherein the light transmitting layer is patterned to expose a portion of the first electrode, wherein the pattern of the phosphor layer exposes the first electrode, wherein the line pattern of the first electrode is exposed between or in the openings of the patterned light transmitting layer and the first electrode is spaced apart from the patterned phosphor layer which is disposed on the patterned light transmitting layer. a light transmitting layer on the light emitting structure; and further comprising a patterned phosphor layer on the light transmitting layer, wherein the patterned phosphor layer converts light generated from the light emitting structure into light having a wavelength longer than that of the light generated from the light emitting structure, and wherein the first electrode is an electrically connected line pattern, wherein the light transmitting layer is thicker than the first electrode, wherein the light transmitting layer is patterned to expose a portion of the first electrode, wherein the pattern of the phosphor layer exposes the first electrode, wherein the line pattern of the first electrode is exposed between or in the openings of the patterned light transmitting layer and the first electrode is spaced apart from the patterned phosphor layer which is disposed on the patterned light transmitting layer.