A range image sensor comprising: a semiconductor substrate of a first conductive type onto which light is made incident from the rear surface; a plurality of first semiconductor regions of a second conductive type which are one-dimensionally or two-dimensionally arranged on the surface side of the semiconductor substrate and form p-n junctions with the semiconductor substrate; and a plurality of second semiconductor regions of a second conductive type which are one-dimensionally or two-dimensionally arranged on the surface side of the semiconductor substrate, are adjacent to the first semiconductor regions, and form p-n junctions with the semiconductor substrate, wherein to the semiconductor substrate and the first semiconductor regions, a first electrode and a second electrode for applying a first reverse bias voltage between these are electrically connected, respectively, to the second semiconductor regions, a third electrode for applying a second reverse bias voltage having a predetermined phase difference with respect to the first reverse bias voltage between the second semiconductor regions and the first electrode electrically connected to the semiconductor substrate is electrically connected, Characterized in that: when the first reverse bias voltage to be applied reaches a predetermined bias voltage value, first depleted layers (Al) expanding from the p-n junctions of the first semiconductor regions adjacent to each other via the second semiconductor regions link to each other, and when the second reverse bias voltage to be applied reaches the predetermined bias voltage value, second depleted layers expanding from the p-n junctions of the second semiconductor regions adjacent to each other via the first semiconductor regions link to each other. a semiconductor substrate of a first conductive type onto which light is made incident from the rear surface; a plurality of first semiconductor regions of a second conductive type which are one-dimensionally or two-dimensionally arranged on the surface side of the semiconductor substrate and form p-n junctions with the semiconductor substrate; and a plurality of second semiconductor regions of a second conductive type which are one-dimensionally or two-dimensionally arranged on the surface side of the semiconductor substrate, are adjacent to the first semiconductor regions, and form p-n junctions with the semiconductor substrate, wherein to the semiconductor substrate and the first semiconductor regions, a first electrode and a second electrode for applying a first reverse bias voltage between these are electrically connected, respectively, to the second semiconductor regions, a third electrode for applying a second reverse bias voltage having a predetermined phase difference with respect to the first reverse bias voltage between the second semiconductor regions and the first electrode electrically connected to the semiconductor substrate is electrically connected, when the first reverse bias voltage to be applied reaches a predetermined bias voltage value, first depleted layers (Al) expanding from the p-n junctions of the first semiconductor regions adjacent to each other via the second semiconductor regions link to each other, and when the second reverse bias voltage to be applied reaches the predetermined bias voltage value, second depleted layers expanding from the p-n junctions of the second semiconductor regions adjacent to each other via the first semiconductor regions link to each other.