Device for sensing a gas, wherein the device has the following features: an intermediate layer composed of a solid electrolyte, wherein the intermediate layer has a first main surface and a second main surface facing away from the first main surface; a first reinforcement layer arranged on the first main surface of the intermediate layer, wherein at least one first cutout section is shaped in the first reinforcement layer; a second reinforcement layer arranged on the second main surface of the intermediate layer, wherein at least one second cutout section is shaped in the second reinforcement layer and is arranged in a manner at least partially offset from the at least one first cutout section of the first reinforcement layer along the intermediate layer; at least one measuring electrode for sensing the gas in a measurement medium, wherein the at least one measuring electrode is applied to the intermediate layer in the at least one first cutout section of the first reinforcement layer in such a manner that said at least one measuring electrode is able to be directed towards the measurement medium; and at least one reference electrode for sensing the gas in a reference medium, wherein the at least one reference electrode is applied to the intermediate layer in the at least one second cutout section of the second reinforcement layer in a manner such that said at least one reference electrode is able to be directed towards the reference medium, wherein the first reinforcement layer is arranged in the form of a passivation layer at the solid-electrolyte layer, wherein the second reinforcement layer is arranged in the form of a substrate shaped from a semiconductor material or in the form of a carrier substrate shaped from a semiconductor material at the solid-electrolyte layer, wherein the device is fabricated by means of semiconductor processes appertaining to microsystems engineering. an intermediate layer composed of a solid electrolyte, wherein the intermediate layer has a first main surface and a second main surface facing away from the first main surface; a first reinforcement layer arranged on the first main surface of the intermediate layer, wherein at least one first cutout section is shaped in the first reinforcement layer; a second reinforcement layer arranged on the second main surface of the intermediate layer, wherein at least one second cutout section is shaped in the second reinforcement layer and is arranged in a manner at least partially offset from the at least one first cutout section of the first reinforcement layer along the intermediate layer; at least one measuring electrode for sensing the gas in a measurement medium, wherein the at least one measuring electrode is applied to the intermediate layer in the at least one first cutout section of the first reinforcement layer in such a manner that said at least one measuring electrode is able to be directed towards the measurement medium; and at least one reference electrode for sensing the gas in a reference medium, wherein the at least one reference electrode is applied to the intermediate layer in the at least one second cutout section of the second reinforcement layer in a manner such that said at least one reference electrode is able to be directed towards the reference medium, wherein the first reinforcement layer is arranged in the form of a passivation layer at the solid-electrolyte layer, wherein the second reinforcement layer is arranged in the form of a substrate shaped from a semiconductor material or in the form of a carrier substrate shaped from a semiconductor material at the solid-electrolyte layer, wherein the device is fabricated by means of semiconductor processes appertaining to microsystems engineering.