A device comprising: a semiconductor structure comprising: a light emitting layer disposed between an n-type region and a p-type region; an p-contact region; an n-contact region, wherein a cross section of the n-contact region comprises a plurality of first regions and second regions, wherein in the first regions portions of the light emitting layer and p-type region are removed to expose the n-type region, wherein in the second regions the light emitting layer and p-type region remain in the device and form a contiguous region, wherein the plurality of first regions are separated by the plurality of second regions, and a first metal contact formed over the semiconductor structure in the p-contact region; and a second metal contact formed over the semiconductor structure in the n-contact region, wherein the second metal contact is in electrical contact with at least one of the first regions and at least one of the second regions in the n-contact region; and a trench disposed between the n-contact region and the p-contact region, wherein the trench electrically isolates the first metal contact from the second metal contact; wherein the first metal contact is also formed over the second regions of the n-contact region, a metal is formed over the n-contact region and over the p-contact region, wherein the second metal contact comprises the metal in the n-contact region, the p-contact region and the n-contact region comprise contact bumps (38,40) formed in the metal, the bumps in the p-contact region are co-planar with the bumps in the n-contact region, and the contact bumps formed on the p-contact are similar in size and spacing to the first regions in the n-contact region. a semiconductor structure comprising: a light emitting layer disposed between an n-type region and a p-type region; an p-contact region; an n-contact region, wherein a cross section of the n-contact region comprises a plurality of first regions and second regions, wherein in the first regions portions of the light emitting layer and p-type region are removed to expose the n-type region, wherein in the second regions the light emitting layer and p-type region remain in the device and form a contiguous region, wherein the plurality of first regions are separated by the plurality of second regions, and a first metal contact formed over the semiconductor structure in the p-contact region; and a second metal contact formed over the semiconductor structure in the n-contact region, wherein the second metal contact is in electrical contact with at least one of the first regions and at least one of the second regions in the n-contact region; and a trench disposed between the n-contact region and the p-contact region, wherein the trench electrically isolates the first metal contact from the second metal contact; wherein the first metal contact is also formed over the second regions of the n-contact region, a metal is formed over the n-contact region and over the p-contact region, wherein the second metal contact comprises the metal in the n-contact region, the p-contact region and the n-contact region comprise contact bumps (38,40) formed in the metal, the bumps in the p-contact region are co-planar with the bumps in the n-contact region, and the contact bumps formed on the p-contact are similar in size and spacing to the first regions in the n-contact region. a light emitting layer disposed between an n-type region and a p-type region; an p-contact region; an n-contact region, wherein a cross section of the n-contact region comprises a plurality of first regions and second regions, wherein in the first regions portions of the light emitting layer and p-type region are removed to expose the n-type region, wherein in the second regions the light emitting layer and p-type region remain in the device and form a contiguous region, wherein the plurality of first regions are separated by the plurality of second regions, and a first metal contact formed over the semiconductor structure in the p-contact region; and a second metal contact formed over the semiconductor structure in the n-contact region,