A silicon controlled rectifier, SCR, comprising: a semiconductor body including a first main surface; an active device region; a device isolation region configured to electrically insulate the active device region from neighboring active device regions; first SCR regions in the active device region; a second SCR region of a first conductivity type in the active device region, wherein a first pn-junction or a Schottky junction is formed at an interface between the first SCR regions and the second SCR region, and a first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another; a third SCR region of a second conductivity type in the active device region, wherein a second pn-junction is formed at an interface between the second SCR region and the third SCR region; a fourth SCR region of the first conductivity type in the active device region, wherein a third pn-junction is formed at an interface between the third SCR region and the fourth SCR region; a first electrode electrically connected to the first plurality of the first regions at the first main surface; and a second electrode electrically coupled to the fourth SCR region at the first main surface, wherein each of the first plurality of the first SCR regions and each of the sub-regions of the second SCR region are arranged in stripes extending along a lateral direction, respectively, wherein the lateral direction is parallel or perpendicular to a longitudinal direction of the second SCR region, and is perpendicular to a direction along which the first plurality of the first SCR regions and the sub-regions of the second SCR region are alternately arranged and directly adjoin one another; and wherein the second SCR region and the fourth SCR region are embedded in the third SCR region; and wherein the silicon controlled rectifier further comprises: fifth SCR regions in the active device region, wherein a fourth pn-junction or a Schottky junction is formed at an interface between the fourth SCR region and the fifth SCR regions, a first plurality of the fifth SCR regions and sub-regions of the fourth SCR region are alternately arranged and directly adjoin one another, and the second electrode is electrically connected to the first plurality of the fifth SCR regions at the first main surface. a semiconductor body including a first main surface; an active device region; a device isolation region configured to electrically insulate the active device region from neighboring active device regions; first SCR regions in the active device region; a second SCR region of a first conductivity type in the active device region, wherein a first pn-junction or a Schottky junction is formed at an interface between the first SCR regions and the second SCR region, and a first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another; a third SCR region of a second conductivity type in the active device region, wherein a second pn-junction is formed at an interface between the second SCR region and the third SCR region; a fourth SCR region of the first conductivity type in the active device region, wherein a third pn-junction is formed at an interface between the third SCR region and the fourth SCR region; a first electrode electrically connected to the first plurality of the first regions at the first main surface; and a second electrode electrically coupled to the fourth SCR region at the first main surface, wherein each of the first plurality of the first SCR regions and each of the sub-regions of the second SCR region are arranged in stripes extending along a lateral direction, respectively, wherein the lateral direction is parallel or perpendicular to a longitudinal direction of the second SCR region, and is perpendicular to a direction along which the first plurality of the first SCR regions and the sub-regions of the second SCR region are alternately arranged and directly adjoin one another; and wherein the second SCR region and the fourth SCR region are embedded in the third SCR region; and wherein the silicon controlled rectifier further comprises: fifth SCR regions in the active device region, wherein a fourth pn-junction or a Schottky junction is formed at an interface between the fourth SCR region and the fifth SCR regions, a first plurality of the fifth SCR regions and sub-regions of the fourth SCR region are alternately arranged and directly adjoin one another, and the second electrode is electrically connected to the first plurality of the fifth SCR regions at the first main surface. fifth SCR regions in the active device region, wherein a fourth pn-junction or a Schottky junction is formed at an interface between the fourth SCR region and the fifth SCR regions, a first plurality of the fifth SCR regions and sub-regions of the fourth SCR region are alternately arranged and directly adjoin one another, and the second electrode is electrically connected to the first plurality of the fifth SCR regions at the first main surface.