A thin film processing equipment comprising: a tray for supporting a substrate; a reaction chamber, being a sealed chamber, having a top and a bottom corresponding to the top; a gas supplying mechanism disposed in said top of said reaction chamber, provided with a set of gas supplying ports including an inner tube forming a first flow channel, one end of said first flow channel being an ejecting outlet of said gas supplying port and the other end which corresponds to said gas supplying port being intercommunicated with a first gas containing chamber, and an outer tube forming a second flow channel, one end of said second flow channel being another ejecting outlet of said gas supplying port and the other end which corresponds to said gas supplying port being intercommunicated with a second gas containing chamber, wherein said first flow channel and said second flow channel are separated from each other for spraying down different kinds of gas; and a transferring mechanism disposed in said bottom of said reaction chamber for transferring said tray and said substrate into said reaction chamber; wherein said set of gas supplying ports of said gas supplying mechanism is in form of a concentric-circle structure, and in said top of said reaction chamber, and each port of said set of gas supplying ports is in the same level, said thin film processing equipment being characterized by a third gas containing chamber accessible via a vent-hole and suitable for receiving a heat source introduced via the vent-hole to provide heat for the reaction gas passing through the second flow channel to keep the temperature of the sprayed reaction gas within a range. a tray for supporting a substrate; a reaction chamber, being a sealed chamber, having a top and a bottom corresponding to the top; a gas supplying mechanism disposed in said top of said reaction chamber, provided with a set of gas supplying ports including an inner tube forming a first flow channel, one end of said first flow channel being an ejecting outlet of said gas supplying port and the other end which corresponds to said gas supplying port being intercommunicated with a first gas containing chamber, and an outer tube forming a second flow channel, one end of said second flow channel being another ejecting outlet of said gas supplying port and the other end which corresponds to said gas supplying port being intercommunicated with a second gas containing chamber, wherein said first flow channel and said second flow channel are separated from each other for spraying down different kinds of gas; and a transferring mechanism disposed in said bottom of said reaction chamber for transferring said tray and said substrate into said reaction chamber; wherein said set of gas supplying ports of said gas supplying mechanism is in form of a concentric-circle structure, and in said top of said reaction chamber, and each port of said set of gas supplying ports is in the same level, said thin film processing equipment being characterized by a third gas containing chamber accessible via a vent-hole and suitable for receiving a heat source introduced via the vent-hole to provide heat for the reaction gas passing through the second flow channel to keep the temperature of the sprayed reaction gas within a range.