A method for bonding and interconnecting a first IC device arranged on a first substrate to a second IC device arranged on a second substrate, wherein each IC device comprises a dielectric bonding layer (5a,5b) at its outer surface, and wherein each IC device further comprises one or more metal contact structures (4a, 4b,17), wherein the method comprises the steps of: • producing at least one cavity in the outer surface of the first IC device, the cavity traversing at least the dielectric bonding layer of the first IC device, and thereafter: • aligning the first substrate with respect to the second substrate, and forming a substrate assembly by direct bonding between the bonding layers (5a,5b), so that in the substrate assembly the cavity formed in the first IC device overlaps a contact structure (4b,17) of the second IC device, and thereafter: • after bonding, optionally thinning the first substrate and thereafter: • producing a Through Substrate Via opening in the first substrate, the TSV opening overlapping the cavity, • forming an aggregate opening comprising the TSV opening and the cavity, thereby exposing at least part of the contact structure (4b,17) of the second IC device, • after the formation of an isolation liner on at least part of the sidewalls of the aggregate opening, producing a metal interconnection plug in the aggregate opening, that contacts the contact structure (4b,17) of the second IC device, and forms at least part of an interconnection path between the contact structure of the second IC device and a contact structure of the first IC device, wherein: • the second IC device comprises a metal contact pad incorporated in the bonding layer of the second device so that the upper surface of the metal contact pad is essentially in the same plane as the upper surface of the bonding layer, • the metal contact pad is in electrical contact with a metal contact structure of the second IC device and • in the substrate assembly, the cavity overlaps the metal contact pad, and characterized in that • an additional dielectric bonding layer is present on the bonding layer into which the metal contact pad is incorporated, and • the formation of the aggregate opening includes a step of etching through said additional dielectric bonding layer in the area of the additional layer overlapping the cavity. • producing at least one cavity in the outer surface of the first IC device, the cavity traversing at least the dielectric bonding layer of the first IC device, and thereafter: • aligning the first substrate with respect to the second substrate, and forming a substrate assembly by direct bonding between the bonding layers (5a,5b), so that in the substrate assembly the cavity formed in the first IC device overlaps a contact structure (4b,17) of the second IC device, and thereafter: • after bonding, optionally thinning the first substrate and thereafter: • producing a Through Substrate Via opening in the first substrate, the TSV opening overlapping the cavity, • forming an aggregate opening comprising the TSV opening and the cavity, thereby exposing at least part of the contact structure (4b,17) of the second IC device, • after the formation of an isolation liner on at least part of the sidewalls of the aggregate opening, producing a metal interconnection plug in the aggregate opening, that contacts the contact structure (4b,17) of the second IC device, and forms at least part of an interconnection path between the contact structure of the second IC device and a contact structure of the first IC device, • the second IC device comprises a metal contact pad incorporated in the bonding layer of the second device so that the upper surface of the metal contact pad is essentially in the same plane as the upper surface of the bonding layer, • the metal contact pad is in electrical contact with a metal contact structure of the second IC device and • in the substrate assembly, the cavity overlaps the metal contact pad, and characterized in that • an additional dielectric bonding layer is present on the bonding layer into which the metal contact pad is incorporated, and • the formation of the aggregate opening includes a step of etching through said additional dielectric bonding layer in the area of the additional layer overlapping the cavity.