A memory device, comprising: an array of entropic energy storage devices (EESDs), each EESD comprising a dielectric material having a relative permittivity greater than 3.9, the dielectric material comprising a plurality of polymeric molecules, wherein each EESD is a storage element in the memory device, a plurality of address lines arranged in rows to select a row of the EESDs; a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD; and, a means for determining the capacitance of the EESD, the means being configured to: charge an EESD in the array to a voltage VI, wherein the voltage VI discharges at least in part, due to leakage over time; subsequently determine a capacitance C of the EESD by reading a voltage V of the EESD; apply a perturbing charge dQ to the EESD, wherein the perturbing charge dQ has a magnitude sufficient to induce a change in the voltage V without inducing a change in the capacitance C; subsequently read a voltage V ' of the EESD; and. determine the capacitance C, where C = dQ /( V'-V), wherein the capacitance C is correlated to the voltage VI and the capacitance C remains substantially unchanged as the voltage VI discharges due to leakage; determine, based on the capacitance C, the voltage VI; and, recharge the EESD to the voltage VI. an array of entropic energy storage devices (EESDs), each EESD comprising a dielectric material having a relative permittivity greater than 3.9, the dielectric material comprising a plurality of polymeric molecules, wherein each EESD is a storage element in the memory device, a plurality of address lines arranged in rows to select a row of the EESDs; a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD; and, a means for determining the capacitance of the EESD, the means being configured to: charge an EESD in the array to a voltage VI, wherein the voltage VI discharges at least in part, due to leakage over time; subsequently determine a capacitance C of the EESD by reading a voltage V of the EESD; apply a perturbing charge dQ to the EESD, wherein the perturbing charge dQ has a magnitude sufficient to induce a change in the voltage V without inducing a change in the capacitance C; subsequently read a voltage V ' of the EESD; and. determine the capacitance C, where C = dQ /( V'-V), wherein the capacitance C is correlated to the voltage VI and the capacitance C remains substantially unchanged as the voltage VI discharges due to leakage; determine, based on the capacitance C, the voltage VI; and, recharge the EESD to the voltage VI. charge an EESD in the array to a voltage VI, wherein the voltage VI discharges at least in part, due to leakage over time; subsequently determine a capacitance C of the EESD by reading a voltage V of the EESD; apply a perturbing charge dQ to the EESD, wherein the perturbing charge dQ has a magnitude sufficient to induce a change in the voltage V without inducing a change in the capacitance C; subsequently read a voltage V ' of the EESD; and. determine the capacitance C, where C = dQ /( V'-V), wherein the capacitance C is correlated to the voltage VI and the capacitance C remains substantially unchanged as the voltage VI discharges due to leakage; reading a voltage V of the EESD; apply a perturbing charge dQ to the EESD, wherein the perturbing charge dQ has a magnitude sufficient to induce a change in the voltage V without inducing a change in the capacitance C; subsequently read a voltage V ' of the EESD; and. determine the capacitance C, where C = dQ /( V'-V), wherein the capacitance C is correlated to the voltage VI and the capacitance C remains substantially unchanged as the voltage VI discharges due to leakage; determine, based on the capacitance C, the voltage VI; and, recharge the EESD to the voltage VI.