Method of production of a semiconducting structure comprising a strained portion tied to a support layer by molecular bonding, comprising the steps in which: i. a stack is provided, formed of a semiconducting layer covering a sacrificial layer disposed on a support layer; ii. the semiconducting layer is structured in such a way as to form a structured part and a peripheral part, the structured part comprising a central portion linked to the peripheral part by at least two lateral portions opposite one another in relation to the central portion; iii. a cavity situated under the structured part is produced by etching of the sacrificial layer, so as to render free a surface of the support layer situated at the level of the cavity and to strain the central portion, termed the strained portion, by the lateral portions, and the structured part is placed in contact with said free surface so as to bind the structured part of said free surface by molecular bonding; the method being characterized in that: iv. a minimum value of molecular bonding energy of the structured part on the support layer is determined, together with a minimum value of bonded area of the lateral portions on the support layer, these minimum values being such that said molecular bonding energy is greater than an elastic energy of the structured part; v. a consolidation annealing is performed at an annealing temperature such that the molecular bonding energy exhibits a value greater than or equal to said previously determined minimum value; vi. a distal part of the lateral portions in relation to the strained portion is etched, so that the bonded area of the lateral portions exhibits a value greater than or equal to said previously determined minimum value, thus obtaining said semiconducting structure. i. a stack is provided, formed of a semiconducting layer covering a sacrificial layer disposed on a support layer; ii. the semiconducting layer is structured in such a way as to form a structured part and a peripheral part, the structured part comprising a central portion linked to the peripheral part by at least two lateral portions opposite one another in relation to the central portion; iii. a cavity situated under the structured part is produced by etching of the sacrificial layer, so as to render free a surface of the support layer situated at the level of the cavity and to strain the central portion, termed the strained portion, by the lateral portions, and the structured part is placed in contact with said free surface so as to bind the structured part of said free surface by molecular bonding; iv. a minimum value of molecular bonding energy of the structured part on the support layer is determined, together with a minimum value of bonded area of the lateral portions on the support layer, these minimum values being such that said molecular bonding energy is greater than an elastic energy of the structured part; v. a consolidation annealing is performed at an annealing temperature such that the molecular bonding energy exhibits a value greater than or equal to said previously determined minimum value; vi. a distal part of the lateral portions in relation to the strained portion is etched, so that the bonded area of the lateral portions exhibits a value greater than or equal to said previously determined minimum value, thus obtaining said semiconducting structure.