A display apparatus comprising a plurality of semiconductor light-emitting devices (1050, 2050, 3050, 4050, 5050), wherein at least one of the semiconductor light-emitting devices (1050, 2050, 3050, 4050, 5050) comprises: a first conductive electrode (1156, 2156, 3156, 4156, 5156) and a second conductive electrode (1152, 5152); a first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155) on which the first conductive electrode (1156, 2156, 3156, 4156, 5156) is disposed; a second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153) configured to overlap with the first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155), on which the second conductive electrode (1152, 5152) is disposed; an active layer (1154, 2154, 3154, 4154, 5154) disposed between the first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155) and the second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153); an intermediate layer (1158, 2158, 3158, 4158, 5158) disposed on the second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153); a plurality of protrusions (1160, 2160, 3160, 4160, 5160) formed of a porous material capable of electro polishing on the intermediate layer (1158, 2158, 3158, 4158, 5158), wherein an upper surface of the protrusions is a flat cut surface; and an undoped semiconductor layer (1159, 2159, 3159, 4159, 5159, 5159) disposed between the intermediate layer (1158, 2158, 3158, 4158, 5158) and the protrusions (1160, 2160, 3160, 4160, 5160), and wherein the intermediate layer (1158, 2158, 3158, 4158, 5158) comprises: a first layer (1158a, 2158a, 3158a, 4158a, 5158a) containing conductive impurities; and a second layer (1158b, 2158b, 3158b, 4158b, 5158b) having a higher concentration of conductive impurities than the first layer (1158a, 2158a, 3158a 4158a, 5158a), and wherein the first layer (1158a, 2158a, 3158a, 4158a, 5158a) and the second layer (1158b, 2158b, 3158b, 4158b, 5158b) are sequentially repeated and stacked, wherein the undoped semiconductor layer comprises on its surface a first region including the plurality of protrusions and a second region, wherein the first region has a larger surface roughness than the second region. a first conductive electrode (1156, 2156, 3156, 4156, 5156) and a second conductive electrode (1152, 5152); a first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155) on which the first conductive electrode (1156, 2156, 3156, 4156, 5156) is disposed; a second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153) configured to overlap with the first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155), on which the second conductive electrode (1152, 5152) is disposed; an active layer (1154, 2154, 3154, 4154, 5154) disposed between the first conductive semiconductor layer (1155, 2155, 3155, 4155, 5155) and the second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153); an intermediate layer (1158, 2158, 3158, 4158, 5158) disposed on the second conductive semiconductor layer (1153, 2153, 3153, 4153, 5153); a plurality of protrusions (1160, 2160, 3160, 4160, 5160) formed of a porous material capable of electro polishing on the intermediate layer (1158, 2158, 3158, 4158, 5158), wherein an upper surface of the protrusions is a flat cut surface; and an undoped semiconductor layer (1159, 2159, 3159, 4159, 5159, 5159) disposed between the intermediate layer (1158, 2158, 3158, 4158, 5158) and the protrusions (1160, 2160, 3160, 4160, 5160), and wherein the intermediate layer (1158, 2158, 3158, 4158, 5158) comprises: a first layer (1158a, 2158a, 3158a, 4158a, 5158a) containing conductive impurities; and a second layer (1158b, 2158b, 3158b, 4158b, 5158b) having a higher concentration of conductive impurities than the first layer (1158a, 2158a, 3158a 4158a, 5158a), and a first layer (1158a, 2158a, 3158a, 4158a, 5158a) containing conductive impurities; and a second layer (1158b, 2158b, 3158b, 4158b, 5158b) having a higher concentration of conductive impurities than the first layer (1158a, 2158a, 3158a 4158a, 5158a), and wherein the first layer (1158a, 2158a, 3158a, 4158a, 5158a) and the second layer (1158b, 2158b, 3158b, 4158b, 5158b) are sequentially repeated and stacked, wherein the undoped semiconductor layer comprises on its surface a first region including the plurality of protrusions and a second region, wherein the first region has a larger surface roughness than the second region.