A method of manufacturing an electromechanical device having mechanical structures (20a, 20b, 20c, 20d), an electrical contact and field regions (22a, 22b), all overlying a substrate, wherein the mechanical structures (20a, 20b, 20c, 20d) and the electrical contact are disposed between the field regions (22a, 22b), wherein the field regions (22a, 22b) are comprised of silicon, germanium, silicon/germanium, silicon carbide or gallium arsenide, and wherein the mechanical structures (20a, 20b, 20c, 20d) reside in a sealed chamber, the method comprising: providing a substrate with a first sacrificial layer, an electrical contact and mechanical structures (20a, 20b, 20c, 20d), wherein the electrical contact and the mechanical structures (20a, 20b, 20c, 20d) are disposed between field regions (22a, 22b), wherein the electrical contact, the mechanical structures (20a, 20b, 20c, 20d) and the field regions (22a, 22b) are all disposed on the first sacrificial layer; depositing a second sacrificial layer over the mechanical structures (20a, 20b, 20c, 20d), the electrical contact and a portion of each of the field regions (22a, 22b), directly covering the mechanical structures (20a, 20b, 20c, 20d), the electrical contact and the portions of the field regions (22a, 22b); forming an opening into the second sacrificial layer, wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via, wherein the first encapsulation layer consitst of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer (30, 32); removing at least a portion of the first and second sacrificial layer (30, 32) to form the chamber; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer, wherein the second encapsulation layer consists of a semiconductor material and covers the vent. providing a substrate with a first sacrificial layer, an electrical contact and mechanical structures (20a, 20b, 20c, 20d), wherein the electrical contact and the mechanical structures (20a, 20b, 20c, 20d) are disposed between field regions (22a, 22b), wherein the electrical contact, the mechanical structures (20a, 20b, 20c, 20d) and the field regions (22a, 22b) are all disposed on the first sacrificial layer; depositing a second sacrificial layer over the mechanical structures (20a, 20b, 20c, 20d), the electrical contact and a portion of each of the field regions (22a, 22b), directly covering the mechanical structures (20a, 20b, 20c, 20d), the electrical contact and the portions of the field regions (22a, 22b); forming an opening into the second sacrificial layer, wherein the opening is positioned in a portion of the second sacrificial layer which covers the electrical contact; depositing a first encapsulation layer over the second sacrificial layer filling up the opening for forming a contact via, wherein the first encapsulation layer consitst of a semiconductor material; forming at least one vent through the first encapsulation layer to allow removal of at least a portion of the first and second sacrificial layer (30, 32); removing at least a portion of the first and second sacrificial layer (30, 32) to form the chamber; sealing the chamber by depositing a second encapsulation layer on the first encapsulation layer, wherein the second encapsulation layer consists of a semiconductor material and covers the vent.