Process for fabricating at least one semiconductor structure separated from a support substrate, comprising the following steps: i) producing, starting from a support substrate, a nucleation layer formed of a two-dimensional material comprising at least three monolayers, including at least one interlayer monolayer, each monolayer being formed of a two-dimensional crystal lattice; ii) producing, by epitaxy starting from the nucleation layer, at least one semiconductor structure, ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface, ∘ an upper face of the support substrate, on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer, so that the free surface has an upper face and a lateral edge; iii) obtaining a conductive surface of a first electrode, located in said lateral zone and different from said free surface; iv) placing the structure thus obtained in an aqueous electrolytic bath, in which is placed a second electrode, the aqueous electrolyte then coming into contact, in the lateral zone, with the free surface of the nucleation layer and with the conductive surface of the first electrode; v) applying a potential difference between said electrodes (30,40), suitable for causing the formation of hydroxyl radicals at the interface between the conductive surface and the aqueous electrolyte, which then react with the upper face and the lateral edge of the free surface of the nucleation layer, then degrading at least one interlayer monolayer of the nucleation layer until the separation of the semiconductor structure relative to the support substrate is brought about. i) producing, starting from a support substrate, a nucleation layer formed of a two-dimensional material comprising at least three monolayers, including at least one interlayer monolayer, each monolayer being formed of a two-dimensional crystal lattice; ii) producing, by epitaxy starting from the nucleation layer, at least one semiconductor structure, ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface, ∘ an upper face of the support substrate, on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer, so that the free surface has an upper face and a lateral edge; ∘ so as to be bordered by a lateral zone in which the nucleation layer has a free surface, ∘ an upper face of the support substrate, on which the nucleation layer rests, comprising a first surface not covered by the nucleation layer, so that the free surface has an upper face and a lateral edge; iii) obtaining a conductive surface of a first electrode, located in said lateral zone and different from said free surface; iv) placing the structure thus obtained in an aqueous electrolytic bath, in which is placed a second electrode, the aqueous electrolyte then coming into contact, in the lateral zone, with the free surface of the nucleation layer and with the conductive surface of the first electrode; v) applying a potential difference between said electrodes (30,40), suitable for causing the formation of hydroxyl radicals at the interface between the conductive surface and the aqueous electrolyte, which then react with the upper face and the lateral edge of the free surface of the nucleation layer, then degrading at least one interlayer monolayer of the nucleation layer until the separation of the semiconductor structure relative to the support substrate is brought about.