A multiple-path amplifier comprising: a semiconductor die; a first transistor integrally-formed with the semiconductor die and having a first output terminal, wherein a first signal path through the first transistor extends in a first direction from a control terminal of the first transistor to the first output terminal; a second transistor integrally-formed with the semiconductor die and having a second output terminal and a combining node, wherein the second output terminal corresponds to or is directly electrically coupled to the combining node, and wherein a second signal path through the second transistor extends in a second direction from a control terminal of the second transistor to the second output terminal; and an integrated phase delay circuit, which is configured to apply an overall phase delay to a signal carried between the first and second output terminals, wherein the integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and wherein the delay circuit wirebonds extend in a third direction that is angularly offset from the second direction, wherein the semiconductor die comprises a base semiconductor substrate having bulk resistivity in a range of about 1000 ohm·centimeter to about 100,000 ohm·centimeter or greater, wherein: the second output terminal has an elongated second bondpad extending parallel with the second direction of the second signal path, and the delay circuit wirebonds are connected in parallel between the elongated second bondpad and the first output terminal along the second direction, wherein the second output terminal also comprises an elongated third bondpad that is directly connected to the elongated second bondpad, wherein the elongated third bondpad extends perpendicular to the second direction, and the elongated third bondpad is directly connected to a drain manifold of the second transistor, wherein the multi-path amplifier further comprises a set of output signal wirebonds connected to the elongated third bondpad and extending in the second direction. a semiconductor die; a first transistor integrally-formed with the semiconductor die and having a first output terminal, wherein a first signal path through the first transistor extends in a first direction from a control terminal of the first transistor to the first output terminal; a second transistor integrally-formed with the semiconductor die and having a second output terminal and a combining node, wherein the second output terminal corresponds to or is directly electrically coupled to the combining node, and wherein a second signal path through the second transistor extends in a second direction from a control terminal of the second transistor to the second output terminal; and an integrated phase delay circuit, which is configured to apply an overall phase delay to a signal carried between the first and second output terminals, wherein the integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and wherein the delay circuit wirebonds extend in a third direction that is angularly offset from the second direction, wherein the semiconductor die comprises a base semiconductor substrate having bulk resistivity in a range of about 1000 ohm·centimeter to about 100,000 ohm·centimeter or greater, wherein: the second output terminal has an elongated second bondpad extending parallel with the second direction of the second signal path, and the delay circuit wirebonds are connected in parallel between the elongated second bondpad and the first output terminal along the second direction, wherein the second output terminal also comprises an elongated third bondpad that is directly connected to the elongated second bondpad, wherein the elongated third bondpad extends perpendicular to the second direction, and the elongated third bondpad is directly connected to a drain manifold of the second transistor, to the elongated second bondpad, wherein the elongated third bondpad extends perpendicular to the second direction, and the elongated third bondpad is directly connected to a drain manifold of the second transistor, wherein the multi-path amplifier further comprises a set of output signal wirebonds connected to the elongated third bondpad and extending in the second direction.