An integrated passive device, IPD, (801, 900, 1000) comprising: a semiconductor substrate; a first conductive layer on a top surface of the semiconductor substrate, and a plurality of conductive and dielectric layers formed on or over the top surface of the semiconductor substrate and including a second conductive layer, a third conductive layer thereabove, and a fourth conductive layer thereabove; a metal-insulator-metal, MIM, capacitor coupled to the semiconductor substrate integrally formed as a portion of the device and implemented using at least one of the second, third and fourth conductive layers, the MIM capacitor including: a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode (857; a first radio frequency, RF, capacitor (834, 1034) over the semiconductor substrate, and having at least one first terminal thereof formed from a portion of a one of the conductive layers; a second RF capacitor (838, 1038) over the semiconductor substrate, and having at least one second terminal thereof formed from a portion of one of the conductive layers; and a shielding structure placed between the MIM capacitor and the first and second terminal of the RF capacitors and forming a continuous conductive path, comprising a first vertical portion including a first one or more vias through the semiconductor substrate, an elevated horizontal metal shielding portion (850, 950, 1050) located above the MIM capacitor, and a second vertical portion including a second one or more vias through the semiconductor substrate, wherein the first and second one or more vias (952, 954) extend from a bottom surface of the semiconductor substrate and are electrically coupled to the elevated horizontal metal shielding structure, wherein the fourth conductive layer includes the elevated horizontal metal shielding portion. a semiconductor substrate; a first conductive layer on a top surface of the semiconductor substrate, and a plurality of conductive and dielectric layers formed on or over the top surface of the semiconductor substrate and including a second conductive layer, a third conductive layer thereabove, and a fourth conductive layer thereabove; a metal-insulator-metal, MIM, capacitor coupled to the semiconductor substrate integrally formed as a portion of the device and implemented using at least one of the second, third and fourth conductive layers, the MIM capacitor including: a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode (857; a first radio frequency, RF, capacitor (834, 1034) over the semiconductor substrate, and having at least one first terminal thereof formed from a portion of a one of the conductive layers; a second RF capacitor (838, 1038) over the semiconductor substrate, and having at least one second terminal thereof formed from a portion of one of the conductive layers; and a shielding structure placed between the MIM capacitor and the first and second terminal of the RF capacitors and forming a continuous conductive path, comprising a first vertical portion including a first one or more vias through the semiconductor substrate, an elevated horizontal metal shielding portion (850, 950, 1050) located above the MIM capacitor, and a second vertical portion including a second one or more vias through the semiconductor substrate, wherein the first and second one or more vias (952, 954) extend from a bottom surface of the semiconductor substrate and are electrically coupled to the elevated horizontal metal shielding structure, wherein the fourth conductive layer includes the elevated horizontal metal shielding portion. a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode (857; a first radio frequency, RF, capacitor (834, 1034) over the semiconductor substrate, and having at least one first terminal thereof formed from a portion of a one of the conductive layers; a second RF capacitor (838, 1038) over the semiconductor substrate, and having at least one second terminal thereof formed from a portion of one of the conductive layers; and a shielding structure placed between the MIM capacitor and the first and second terminal of the RF capacitors and forming a continuous conductive path, comprising a first vertical portion including a first one or more vias through the semiconductor substrate, an elevated horizontal metal shielding portion (850, 950, 1050) located above the MIM capacitor, and a second vertical portion including a second one or more vias through the semiconductor substrate, wherein the first and second one or more vias (952, 954) extend from a bottom surface of the semiconductor substrate and are electrically coupled to the elevated horizontal metal shielding structure, wherein the fourth conductive layer includes the elevated horizontal metal shielding portion.