A method for transferring micro-LEDs comprising: forming micro-LEDs (505, 506, 507; 605, 606, 607) on a laser-transparent original substrate (501; 601), wherein the micro-LEDs (505, 506, 507; 605, 606, 607) are lateral micro-LEDs whose P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) are located on one side; bringing the P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) of the lateral micro-LEDs (505, 506, 507; 605, 606, 607) into contact with pads (515p, 515n, 516p, 516n, 517p, 517n; 615p, 615n, 616p, 616n, 617p, 617n) preset on a receiving substrate (504; 604); and irradiating the original substrate (501; 601) with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate, wherein the lateral micro-LEDs (505, 506, 507; 605, 606, 607) contain a magnetic substance, and the P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) of the lateral micro-LEDs (505, 506, 507; 605, 606, 607) are brought into contact with pads preset on a receiving substrate by means of an action of electromagnetic force simultaneously with the step of irradiating the original substrate with laser; wherein the method is characterized by further comprising: providing an anisotropic conductive layer on a receiving substrate; wherein the P electrodes and N electrodes of the lateral micro-LEDs are brought into contact with pads preset on the receiving substrate via the anisotropic conductive layer; and wherein the method further comprises: processing the anisotropic conductive layer, to electrically connect the P electrodes and N electrodes of the lateral micro-LEDs with the pads on the receiving substrate. forming micro-LEDs (505, 506, 507; 605, 606, 607) on a laser-transparent original substrate (501; 601), wherein the micro-LEDs (505, 506, 507; 605, 606, 607) are lateral micro-LEDs whose P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) are located on one side; bringing the P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) of the lateral micro-LEDs (505, 506, 507; 605, 606, 607) into contact with pads (515p, 515n, 516p, 516n, 517p, 517n; 615p, 615n, 616p, 616n, 617p, 617n) preset on a receiving substrate (504; 604); and irradiating the original substrate (501; 601) with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate, wherein the lateral micro-LEDs (505, 506, 507; 605, 606, 607) contain a magnetic substance, and the P electrodes (505p, 506p, 507p; 605p, 606p, 607p) and N electrodes (505n, 506n, 507n; 605n, 606n, 607n) of the lateral micro-LEDs (505, 506, 507; 605, 606, 607) are brought into contact with pads preset on a receiving substrate by means of an action of electromagnetic force simultaneously with the step of irradiating the original substrate with laser; wherein the method is characterized by further comprising: providing an anisotropic conductive layer on a receiving substrate; wherein the P electrodes and N electrodes of the lateral micro-LEDs are brought into contact with pads preset on the receiving substrate via the anisotropic conductive layer; and wherein the method further comprises: processing the anisotropic conductive layer, to electrically connect the P electrodes and N electrodes of the lateral micro-LEDs with the pads on the receiving substrate. providing an anisotropic conductive layer on a receiving substrate; wherein the P electrodes and N electrodes of the lateral micro-LEDs are brought into contact with pads preset on the receiving substrate via the anisotropic conductive layer; and wherein the method further comprises: processing the anisotropic conductive layer, to electrically connect the P electrodes and N electrodes of the lateral micro-LEDs with the pads on the receiving substrate.