A lamp unit comprising: a first substrate; a second substrate disposed on the first substrate; light emitting devices disposed on the second substrate, wherein each of the light emitting devices includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and adapted to generate light in operation and a wavelength conversion layer disposed on the light emitting structure and adapted to convert the wavelength of light irradiated from the light emitting structure; a first conductive layer and a second conductive layer disposed on the second substrate; at least one wire (164, 166) electrically connecting at least one of the first conductive layer and the second conductive layer to each of the light emitting devices; and a protecting layer disposed on the first substrate and the second substrate and surrounding the light emitting devices and the at least one wire (164, 166) wherein an upper surface of the wavelength conversion layer is exposed from the protecting layer, and wherein the upper surface of the protecting layer is located at a position higher than the highest point of the at least one wire, characterised in that the wavelength conversion layer surrounds at least a part of the at least one wire, and wherein a height from an upper surface of the light emitting device to the upper surface of the wavelength conversion layer is different from a height from the upper surface of the light emitting device to the upper surface of the protecting layer and, wherein the upper surface of the protecting layer is spaced away from an edge of the upper surface of the wavelength conversion layer. a first substrate; a second substrate disposed on the first substrate; light emitting devices disposed on the second substrate, wherein each of the light emitting devices includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and adapted to generate light in operation and a wavelength conversion layer disposed on the light emitting structure and adapted to convert the wavelength of light irradiated from the light emitting structure; a first conductive layer and a second conductive layer disposed on the second substrate; at least one wire (164, 166) electrically connecting at least one of the first conductive layer and the second conductive layer to each of the light emitting devices; and a protecting layer disposed on the first substrate and the second substrate and surrounding the light emitting devices and the at least one wire (164, 166) wherein an upper surface of the wavelength conversion layer is exposed from the protecting layer, and wherein the upper surface of the protecting layer is located at a position higher than the highest point of the at least one wire, characterised in that the wavelength conversion layer surrounds at least a part of the at least one wire, and wherein a height from an upper surface of the light emitting device to the upper surface of the wavelength conversion layer is different from a height from the upper surface of the light emitting device to the upper surface of the protecting layer and, wherein the upper surface of the protecting layer is spaced away from an edge of the upper surface of the wavelength conversion layer.