A system for semiconductor processing, comprising: an actuator control; a gas line; a plasma reactor coupled to the gas line and the actuator control, the plasma reactor including: a chuck assembly; and an active showerhead (112, 400) located above the chuck assembly, the active showerhead including: a plurality of substrate layers, wherein each of the plurality of substrate layers is made of a semiconductor wafer, wherein the plurality of substrate layers include an actuator and transfer component coupled to the actuator control, wherein the actuator and transfer component is coupled to the gas line via a gas channel; an electrode layer (124, 212, 858) located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a gap between the chuck assembly and the active showerhead, wherein the actuator control is configured to control the actuator and transfer component to allow and disallow passage of one or more process gases received from the gas line and the gas channel via the opening into the gap. an actuator control; a gas line; a plasma reactor coupled to the gas line and the actuator control, the plasma reactor including: a chuck assembly; and an active showerhead (112, 400) located above the chuck assembly, the active showerhead including: a plurality of substrate layers, wherein each of the plurality of substrate layers is made of a semiconductor wafer, wherein the plurality of substrate layers include an actuator and transfer component coupled to the actuator control, wherein the actuator and transfer component is coupled to the gas line via a gas channel; an electrode layer (124, 212, 858) located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a gap between the chuck assembly and the active showerhead, a chuck assembly; and an active showerhead (112, 400) located above the chuck assembly, the active showerhead including: a plurality of substrate layers, wherein each of the plurality of substrate layers is made of a semiconductor wafer, wherein the plurality of substrate layers include an actuator and transfer component coupled to the actuator control, wherein the actuator and transfer component is coupled to the gas line via a gas channel; an electrode layer (124, 212, 858) located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a gap between the chuck assembly and the active showerhead, a plurality of substrate layers, wherein each of the plurality of substrate layers is made of a semiconductor wafer, wherein the plurality of substrate layers include an actuator and transfer component coupled to the actuator control, wherein the actuator and transfer component is coupled to the gas line via a gas channel; an electrode layer (124, 212, 858) located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a gap between the chuck assembly and the active showerhead, wherein the actuator control is configured to control the actuator and transfer component to allow and disallow passage of one or more process gases received from the gas line and the gas channel via the opening into the gap.