A method of a selective chemical mechanical polishing comprising steps of: a) providing a semiconductor substrate having a surface containing a first material selected from SiC x N y wherein x is in the range of 0.1wt% to 55wt%, and y is in the range of 0.1wt % to 32 wt%; SiC; and SiN; and at least one second material selected from SiO 2 and SiN, wherein the first material is different from the second material; b) providing a polishing pad; c) providing a chemical mechanical polishing composition comprising: A) 0.05 weight % to 30 weight % abrasive; B) 0.025 weight % to 5 weight % chemical additive; and C) liquid carrier; wherein the chemical additive is selected from the group consisting of 4-morpholine derivatives having a general molecular structure of: wherein R is selected from the group consisting of alkyl, alkoxy, optionally substituted organic group with one or more hydroxyl groups, optionally substituted organic sulfonic acid, optionally substituted organic sulfonic acid salt, optionally substituted organic carboxylic acid, optionally substituted organic carboxylic acid salt, organic carboxylic ester and organic amine; and combinations thereof; and the pH of the chemical mechanical polishing composition is from 2 to 8; d) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and e) polishing the surface of the semiconductor substrate to selectively remove the first material; wherein at least a portion of the surface containing the first material is in contact with both the polishing pad and the chemical mechanical polishing composition; ratio of removal rate of the first material to removal rate of the second material is equal or greater than 1. a) providing a semiconductor substrate having a surface containing a first material selected from SiC x N y wherein x is in the range of 0.1wt% to 55wt%, and y is in the range of 0.1wt % to 32 wt%; SiC; and SiN; and at least one second material selected from SiO 2 and SiN, wherein the first material is different from the second material; b) providing a polishing pad; c) providing a chemical mechanical polishing composition comprising: A) 0.05 weight % to 30 weight % abrasive; B) 0.025 weight % to 5 weight % chemical additive; and C) liquid carrier; wherein the chemical additive is selected from the group consisting of 4-morpholine derivatives having a general molecular structure of: wherein R is selected from the group consisting of alkyl, alkoxy, optionally substituted organic group with one or more hydroxyl groups, optionally substituted organic sulfonic acid, optionally substituted organic sulfonic acid salt, optionally substituted organic carboxylic acid, optionally substituted organic carboxylic acid salt, organic carboxylic ester and organic amine; and combinations thereof; and the pH of the chemical mechanical polishing composition is from 2 to 8; A) 0.05 weight % to 30 weight % abrasive; B) 0.025 weight % to 5 weight % chemical additive; and C) liquid carrier; d) contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and e) polishing the surface of the semiconductor substrate to selectively remove the first material;