A system for fabricating a perovskite film, wherein source materials include: an organic halide compound AX and a metal halide compound BX 2, wherein halogen X in the AX and halogen X in the BX2 are the same or different, the system comprising: a chamber having a closed hollow structure that has a side section along a vertical direction and top and bottom sections along a horizontal direction; a substrate stage coupled to the top section of the chamber and configured to have a stage surface facing vertically downward for a substrate to be placed and to rotate around a central axis at a rotation speed; a first set of evaporation units comprising one or more evaporation units, each coupled to the side section or to the bottom section of the chamber, for generating vapors of one or more first source materials with one or more first evaporation rates, respectively, wherein at least one of the one or more first source materials is the AX; a second set of evaporation units (520, 521, 522) comprising two or more evaporation units coupled to the bottom section of the chamber for generating vapors of two or more second source materials with two or more second evaporation rates, respectively, wherein at least one of the two or more second source materials is the BX2; and a shield for separating two or more evaporation units coupled to the bottom section of the chamber, defining two or more zones designated for the two or more evaporation units coupled to the bottom section, respectively, wherein the zone designated for each of the two or more evaporation units in the second set is configured to have a horizontal cross-sectional area that is open and facing the substrate surface, wherein the first set of evaporation units, the second set of evaporation units and the shield are configured to enable deposition of each of the two or more second source materials to be directional by vertical line-of-sight transfer, and deposition of each of the one or more first source materials to be less directional by circulating the vapor of the first source material in the chamber, and wherein the shield is configured to include a top shield portion above the at least one or more evaporation units in the first set to promote the circulation of the vapor of the first source material therefrom by reducing the vapor directly hitting the substrate, and at least one of the one or more evaporation units in the first set is coupled to the bottom section of the chamber. a chamber having a closed hollow structure that has a side section along a vertical direction and top and bottom sections along a horizontal direction; a substrate stage coupled to the top section of the chamber and configured to have a stage surface facing vertically downward for a substrate to be placed and to rotate around a central axis at a rotation speed; a first set of evaporation units comprising one or more evaporation units, each coupled to the side section or to the bottom section of the chamber, for generating vapors of one or more first source materials with one or more first evaporation rates, respectively, wherein at least one of the one or more first source materials is the AX; a second set of evaporation units (520, 521, 522) comprising two or more evaporation units coupled to the bottom section of the chamber for generating vapors of two or more second source materials with two or more second evaporation rates, respectively, wherein at least one of the two or more second source materials is the BX2; and a shield for separating two or more evaporation units coupled to the bottom section of the chamber, defining two or more zones designated for the two or more evaporation units coupled to the bottom section, respectively, wherein the zone designated for each of the two or more evaporation units in the second set is configured to have a horizontal cross-sectional area that is open and facing the substrate surface, wherein the first set of evaporation units, the second set of evaporation units and the shield are configured to enable deposition of each of the two or more second source materials to be directional by vertical line-of-sight transfer, and deposition of each of the one or more first source materials to be less directional by circulating the vapor of the first source material in the chamber, and wherein the shield is configured to include a top shield portion above the at least one or more evaporation units in the first set to promote the circulation of the vapor of the first source material therefrom by reducing the vapor directly hitting the substrate, and at least one of the one or more evaporation units in the first set is coupled to the bottom section of the chamber.