A stacked and electrically interconnected structure comprising: a first element comprising a first contact pad; and a second element comprising a second contact pad, the first contact pad and the second contact pad being electrically and mechanically connected to one another by an interface structure, the interface structure comprising a passive equalization circuit that includes a resistive electrical pathway comprising a conductive interface feature (12A,12B) between the first contact pad and the second contact pad in parallel with a capacitive electrical pathway between the first contact pad and the second contact pad, the conductive interface feature (12A,12B) comprising: a first conductive interface feature deposited on or otherwise coupled with the first contact pad; and a second conductive interface feature deposited on or otherwise coupled with the second contact pad, the capacitive electrical pathway comprising a dielectric feature (14A,14B) between the first and second contact pads, the resistive electrical pathway surrounded by the dielectric feature, wherein the resistive electrical pathway defines a contact area (A R) on a portion of the conductive interface feature corresponding to an overlapping area of the first and second conductive interface features (12A, 12B), and wherein the capacitive electrical pathway defines a capacitive area (Ac) between overlapping portions of the first contact pad and the second contact pad the capacitive area comprising: an exposed area of the first contact pad without the first conductive feature; and a second capacitive area (A C2) corresponding to an area where a dielectric feature intervenes between the first conductive interface feature and the second contact pad and an area where a dielectric feature intervenes between the second conductive interface feature and the first contact pad; and wherein a ratio of said capacitive area (Ac) to said contact area (A R) is at least 50:1. a first element comprising a first contact pad; and a second element comprising a second contact pad, the first contact pad and the second contact pad being electrically and mechanically connected to one another by an interface structure, the interface structure comprising a passive equalization circuit that includes a resistive electrical pathway comprising a conductive interface feature (12A,12B) between the first contact pad and the second contact pad in parallel with a capacitive electrical pathway between the first contact pad and the second contact pad, the conductive interface feature (12A,12B) comprising: a first conductive interface feature deposited on or otherwise coupled with the first contact pad; and a second conductive interface feature deposited on or otherwise coupled with the second contact pad, a first conductive interface feature deposited on or otherwise coupled with the first contact pad; and a second conductive interface feature deposited on or otherwise coupled with the second contact pad, the capacitive electrical pathway comprising a dielectric feature (14A,14B) between the first and second contact pads, the resistive electrical pathway surrounded by the dielectric feature, wherein the resistive electrical pathway defines a contact area (A R) on a portion of the conductive interface feature corresponding to an overlapping area of the first and second conductive interface features (12A, 12B), and wherein the capacitive electrical pathway defines a capacitive area (Ac) between overlapping portions of the first contact pad and the second contact pad the capacitive area comprising: an exposed area of the first contact pad without the first conductive feature; and a second capacitive area (A C2) corresponding to an area where a dielectric feature intervenes between the first conductive interface feature and the second contact pad and an area where a dielectric feature intervenes between the second conductive interface feature and the first contact pad; and wherein a ratio of said capacitive area (Ac) to said contact area (A R) is at least 50:1. an exposed area of the first contact pad without the first conductive feature; and a second capacitive area (A C2) corresponding to an area where a dielectric feature intervenes between the first conductive interface feature and the second contact pad and an area where a dielectric feature intervenes between the second conductive interface feature and the first contact pad; and wherein a ratio of said capacitive area (Ac) to said contact area (A R) is at least 50:1.