Stack-shaped multiple solar cell comprising - at least three part cells (SC1, SC2, SC3), wherein each of the three part cells (SC1, SC2, SC3) comprises am emitter and a base, - wherein the first part cell comprises a first layer of a compound with at least the elements Ga and In and P and the energy band gap of the first layer is greater than 1.75 eV and the lattice constant of the first layer lies in the range between 563.5 pm and 567.5 pm, - wherein the second part cell comprises a second layer of a compound with at least the elements Ga and As and the energy band gap of the second layer lies in the range between 1.35 eV and 1.70 eV and the lattice constant of the second layer lies in the range between 563.5 pm and 567.5 pm, - wherein the third part cell comprises a third layer of a compound with at least the elements Ga and In and As and the energy band gap of the third layer is smaller than 1.25 eV and the lattice constant of the third layer is greater than 570.0 pm, - wherein the thickness of the three layers is greater than 100 nm and the three layers are constructed as part of the emitter and as part of the base of the corresponding three part cells (SC1, SC2, SC3), and a metamorphic buffer, wherein the metamorphic buffer is formed between the second part cell and the third part cell and the metamorphic buffer comprises a sequence of at least three layers and the lattice constants of the layers of the buffer are greater than the lattice constant of the second layer of the second part cell and the lattice constant of the layers of the buffer increases from layer to layer in the sequence in the direction towards the third part cell, - wherein no semiconductor bond is formed and no substrate is arranged between each two part cells of the stack, wherein at least the second layer or the third layer or the second and third layers of the part cells consists or consist of a compound with at least the elements Ga and In and As and P and has or have a phosphorous content greater than 1% and less than 35% and an indium content greater than 1%. - at least three part cells (SC1, SC2, SC3), wherein each of the three part cells (SC1, SC2, SC3) comprises am emitter and a base, - wherein the first part cell comprises a first layer of a compound with at least the elements Ga and In and P and the energy band gap of the first layer is greater than 1.75 eV and the lattice constant of the first layer lies in the range between 563.5 pm and 567.5 pm, - wherein the second part cell comprises a second layer of a compound with at least the elements Ga and As and the energy band gap of the second layer lies in the range between 1.35 eV and 1.70 eV and the lattice constant of the second layer lies in the range between 563.5 pm and 567.5 pm, - wherein the third part cell comprises a third layer of a compound with at least the elements Ga and In and As and the energy band gap of the third layer is smaller than 1.25 eV and the lattice constant of the third layer is greater than 570.0 pm, - wherein the thickness of the three layers is greater than 100 nm and the three layers are constructed as part of the emitter and as part of the base of the corresponding three part cells (SC1, SC2, SC3), and a metamorphic buffer, wherein the metamorphic buffer is formed between the second part cell and the third part cell and the metamorphic buffer comprises a sequence of at least three layers and the lattice constants of the layers of the buffer are greater than the lattice constant of the second layer of the second part cell and the lattice constant of the layers of the buffer increases from layer to layer in the sequence in the direction towards the third part cell, - wherein no semiconductor bond is formed and no substrate is arranged between each two part cells of the stack, wherein at least the second layer or the third layer or the second and third layers of the part cells consists or consist of a compound with at least the elements Ga and In and As and P and has or have a phosphorous content greater than 1% and less than 35% and an indium content greater than 1%.