An electronic device, comprising: a main substrate, including a circuit, a plurality of connection pads disposed on a surface of the main substrate; and a light emitting element, disposed on the main substrate, electrically connected with the circuit through at least one of the plurality of the connection pads and comprising a package substrate, a first light-emitting diode chip (104, 104G, 104R, or 104B) disposed on the package sub strate, and an encapsulation material disposed on the first light-emitting diode chip (104, 104G, 104R, or 104B) and the package substrate, the light emitting element includes: a light-shielding layer disposed on the encapsulation material, the light-shielding layer having a first opening and comprising a light reflective layer and a light absorption layer, wherein the light reflective layer is disposed between the light absorption layer and the encapsulation material; wherein the light-shielding layer covers and encloses the encapsulation material, in a top-view direction, an area of the first opening is less than an area of the light emitting element, and in the top-view direction, the light emitting element overlaps the at least one of the plurality of the connection pads. a main substrate, including a circuit, a plurality of connection pads disposed on a surface of the main substrate; and a light emitting element, disposed on the main substrate, electrically connected with the circuit through at least one of the plurality of the connection pads and comprising a package substrate, a first light-emitting diode chip (104, 104G, 104R, or 104B) disposed on the package sub strate, and an encapsulation material disposed on the first light-emitting diode chip (104, 104G, 104R, or 104B) and the package substrate, the light emitting element includes: a light-shielding layer disposed on the encapsulation material, the light-shielding layer having a first opening and comprising a light reflective layer and a light absorption layer, wherein the light reflective layer is disposed between the light absorption layer and the encapsulation material; wherein the light-shielding layer covers and encloses the encapsulation material, in a top-view direction, an area of the first opening is less than an area of the light emitting element, and in the top-view direction, the light emitting element overlaps the at least one of the plurality of the connection pads. a package substrate, a first light-emitting diode chip (104, 104G, 104R, or 104B) disposed on the package sub strate, and an encapsulation material disposed on the first light-emitting diode chip (104, 104G, 104R, or 104B) and the package substrate, the light emitting element includes: a light-shielding layer disposed on the encapsulation material, the light-shielding layer having a first opening and comprising a light reflective layer and a light absorption layer, wherein the light reflective layer is disposed between the light absorption layer and the encapsulation material; wherein the light-shielding layer covers and encloses the encapsulation material, in a top-view direction, an area of the first opening is less than an area of the light emitting element, and in the top-view direction, the light emitting element overlaps the at least one of the plurality of the connection pads. a light-shielding layer disposed on the encapsulation material, the light-shielding layer having a first opening and comprising a light reflective layer and a light absorption layer, wherein the light reflective layer is disposed between the light absorption layer and the encapsulation material; wherein the light-shielding layer covers and encloses the encapsulation material, in a top-view direction, an area of the first opening is less than an area of the light emitting element, and in the top-view direction, the light emitting element overlaps the at least one of the plurality of the connection pads.