A method for manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a silicon carbide substrate, said silicon carbide substrate having a first main surface and a second main surface opposite to each other, having a gate insulating film provided in contact with said first main surface, having a gate electrode provided in contact with said gate insulating film, and including a first conductivity type region in contact with said first main surface; forming an interlayer insulating film in contact with said gate electrode and said gate insulating film; forming a mask layer in contact with said interlayer insulating film; forming a first recess having a first inner wall surface formed in said interlayer insulating film by performing a first isotropic etching with respect to said interlayer insulating film with use of said mask layer; after said step of forming a first recess, forming a second recess having a second inner wall surface by performing a first anisotropic etching with respect to said interlayer insulating film and said gate insulating film with use of said mask layer and thereby exposing said first conductivity type region of said silicon carbide substrate from said gate insulating film; forming a first electrode in contact with said first conductivity type region; and forming an interconnection being arranged in contact with said first inner wall surface and said second inner wall surface and electrically connected to said first electrode, said step of forming an interlayer insulating film includes the step of forming a first insulating film being in contact with said gate electrode and not being doped with impurities, and the step of forming a second insulating film covering said first insulating film, having a lower softening point than said first insulating film, and being doped with impurities, said step of forming an interlayer insulating film further includes the step of forming a third insulating film covering said second insulating film and being constituted of silicon dioxide, in said step of forming an interconnection, said interconnection is formed in contact with said third insulating film, and said step of forming an interlayer insulating film includes the step of reducing a level difference of an upper surface of said second interlayer insulating film by heating said interlayer insulating film, wherein said third insulating film is formed after said step of reducing a level difference of an upper surface of said second interlayer insulation film. preparing a silicon carbide substrate, said silicon carbide substrate having a first main surface and a second main surface opposite to each other, having a gate insulating film provided in contact with said first main surface, having a gate electrode provided in contact with said gate insulating film, and including a first conductivity type region in contact with said first main surface; forming an interlayer insulating film in contact with said gate electrode and said gate insulating film; forming a mask layer in contact with said interlayer insulating film; forming a first recess having a first inner wall surface formed in said interlayer insulating film by performing a first isotropic etching with respect to said interlayer insulating film with use of said mask layer; after said step of forming a first recess, forming a second recess having a second inner wall surface by performing a first anisotropic etching with respect to said interlayer insulating film and said gate insulating film with use of said mask layer and thereby exposing said first conductivity type region of said silicon carbide substrate from said gate insulating film; forming a first electrode in contact with said first conductivity type region; and forming an interconnection being arranged in contact with said first inner wall surface and said second inner wall surface and electrically connected to said first electrode, said step of forming an interlayer insulating film includes the step of forming a first insulating film being in contact with said gate electrode and not being doped with impurities, and the step of forming a second insulating film covering said first insulating film, having a lower softening point than said first insulating film, and being doped with impurities, said step of forming an interlayer insulating film further includes the step of forming a third insulating film covering said second insulating film and being constituted of silicon dioxide, in said step of forming an interconnection, said interconnection is formed in contact with said third insulating film, and said step of forming an interlayer insulating film includes the step of reducing a level difference of an upper surface of said second interlayer insulating film by heating said interlayer insulating film, wherein said third insulating film is formed after said step of reducing a level difference of an upper surface of said second interlayer insulation film.