A semiconductor light-emitting element (30, 40, 50, 60, 61) comprising: a semiconductor layer comprising: a first semiconductor layer; a second semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode provided on the second semiconductor layer; the second electrode having a first face and a second face, the first face facing the second semiconductor layer, the second face being opposite to the first face, at least a region including the first face of the second electrode being composed of at least any one of silver and silver alloy, and the second electrode having a plurality of crystal grains and a void, the void being located at the grain boundaries, characterized in that a part of the void is provided at the first face of the second electrode, another part of the void is provided at the second face of the second electrode, wherein the void passes through the second electrode in a direction from the first face towards the second face, the void has a width in a plane of the second electrode facing the second semiconductor layer, the width being not more than an emission wavelength of light emitted from the light-emitting layer an area ratio of the void with respect to the entire area of the second electrode is 10 % or less; the semiconductor light emitting element being configured such that light emitted from the light-emitting layer is taken out from a surface of the semiconductor layer opposed to a surface on which the second electrode is provided. a semiconductor layer comprising: a first semiconductor layer; a second semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first semiconductor layer; a second semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode provided on the second semiconductor layer; the second electrode having a first face and a second face, the first face facing the second semiconductor layer, the second face being opposite to the first face, at least a region including the first face of the second electrode being composed of at least any one of silver and silver alloy, and the second electrode having a plurality of crystal grains and a void, the void being located at the grain boundaries, characterized in that a part of the void is provided at the first face of the second electrode, another part of the void is provided at the second face of the second electrode, wherein the void passes through the second electrode in a direction from the first face towards the second face, the void has a width in a plane of the second electrode facing the second semiconductor layer, the width being not more than an emission wavelength of light emitted from the light-emitting layer an area ratio of the void with respect to the entire area of the second electrode is 10 % or less; the semiconductor light emitting element being configured such that light emitted from the light-emitting layer is taken out from a surface of the semiconductor layer opposed to a surface on which the second electrode is provided.