A light-emitting diode comprising: a substrate; a first light-emitting structure on the substrate, the first light-emitting structure comprising a first conductivity type semiconductor layer, a first active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the first active layer; an insulation layer on the first light-emitting structure, the insulation layer being disposed on the second conductivity type semiconductor layer; a second light-emitting structure on the insulation layer, the second light-emitting structure comprising a third conductivity type semiconductor layer on the insulation layer, a second active layer on the third conductivity type semiconductor layer, and a fourth conductivity type semiconductor layer on the second active layer; a first electrode on the first conductivity type semiconductor layer and a second electrode on the fourth conductivity type semiconductor layer; and a common electrode layer disposed between the second conductivity type semiconductor layer and the insulation layer; wherein the common electrode layer includes a plurality of upwardly protruding common electrodes (211, 212, 213, 214) passing through the insulation layer to contact the third conductivity type semiconductor layer of the second light-emitting structure, wherein the plurality of upwardly protruding common electrodes (211, 212, 213, 214) is disposed inside the third conductivity type semiconductor layer, wherein the third conductivity type semiconductor layer surrounds the upper surface and a portion of the side surface of the plurality of upwardly protruding common electrodes (211, 212, 213, 214), wherein a part of the common electrode layer is disposed between a top surface of the second conductivity type semiconductor layer and a bottom surface of the insulation layer, wherein an edge region of a side of the common electrode layer is exposed to the outside of the second light-emitting structure. a substrate; a first light-emitting structure on the substrate, the first light-emitting structure comprising a first conductivity type semiconductor layer, a first active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the first active layer; an insulation layer on the first light-emitting structure, the insulation layer being disposed on the second conductivity type semiconductor layer; a second light-emitting structure on the insulation layer, the second light-emitting structure comprising a third conductivity type semiconductor layer on the insulation layer, a second active layer on the third conductivity type semiconductor layer, and a fourth conductivity type semiconductor layer on the second active layer; a first electrode on the first conductivity type semiconductor layer and a second electrode on the fourth conductivity type semiconductor layer; and a common electrode layer disposed between the second conductivity type semiconductor layer and the insulation layer; wherein the common electrode layer includes a plurality of upwardly protruding common electrodes (211, 212, 213, 214) passing through the insulation layer to contact the third conductivity type semiconductor layer of the second light-emitting structure, wherein the plurality of upwardly protruding common electrodes (211, 212, 213, 214) is disposed inside the third conductivity type semiconductor layer, wherein the third conductivity type semiconductor layer surrounds the upper surface and a portion of the side surface of the plurality of upwardly protruding common electrodes (211, 212, 213, 214), wherein a part of the common electrode layer is disposed between a top surface of the second conductivity type semiconductor layer and a bottom surface of the insulation layer, wherein an edge region of a side of the common electrode layer is exposed to the outside of the second light-emitting structure.