A method for manufacturing a solid-state imaging device, the method comprising: a first step of preparing an imaging element including a first principal surface for receiving an energy line incident thereon, a second principal surface opposing the first principal surface and having at least one electrode arranged thereon, and a photoelectric converter part for photoelectrically converting the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having third and fourth principal surfaces (S3, S4) opposing each other; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces (S2, S3) oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole and electrically connecting the conductive member to the electrode after the third step so that a part of the conductive member projects outside the fourth principal surface of the support substrate, wherein a surface of the part of the conductive member is a projected surface outward from the fourth principal surface such that said surface is suitable for joining by flip-chip bonding; wherein the electrode and the second principal surface of the imaging element prepared by the first step are covered with a flattening film; and wherein the flattening film is partly removed so as to expose at least a part of a surface of the electrode after the third step but before the fourth step. a first step of preparing an imaging element including a first principal surface for receiving an energy line incident thereon, a second principal surface opposing the first principal surface and having at least one electrode arranged thereon, and a photoelectric converter part for photoelectrically converting the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having third and fourth principal surfaces (S3, S4) opposing each other; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces (S2, S3) oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole and electrically connecting the conductive member to the electrode after the third step so that a part of the conductive member projects outside the fourth principal surface of the support substrate, wherein a surface of the part of the conductive member is a projected surface outward from the fourth principal surface such that said surface is suitable for joining by flip-chip bonding; wherein the electrode and the second principal surface of the imaging element prepared by the first step are covered with a flattening film; and wherein the flattening film is partly removed so as to expose at least a part of a surface of the electrode after the third step but before the fourth step.