A semiconductor light emitting diode LED comprising: a first and a second electrode (40, 11) for applying a voltage across an active region, disposed between a first type semiconductor layer and a second type semiconductor layer for generation of light, a light emitting surface for emitting said light, and a plurality of photonic crystals (101, 102) disposed between said light emitting surface and said active region, wherein at least two photonic crystals (101, 102) of a first and a second type, selected among said plurality of photonic crystals (101, 102), are adapted to extract light from said active region and differ from each other with respect to at least one lattice parameter, each of said at least two photonic crystals (101, 102) being associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102), such that a far field pattern from the light generated in the LED is created by combining said respective far field patterns associated with each of said at least two photonic crystals (101, 102), characterized in that, said second electrode comprises sub-electrodes, (41, 42, 43, 44, 45) disposed on the opposite side of said active region compared to said light emitting surface, wherein a first and a second sub-electrode (41, 42, 43, 44, 45) are associated with a respective photonic crystal of the first and second type, (101, 102) respectively, said first and second sub-electrodes (41, 42, 43, 44, 45) being individually controllable by means of applying a respective voltage to each of said first and second sub-electrodes (41, 42, 43, 44, 45) whereby the far field pattern of said LED is dynamically controllable due to difference between far field patterns from said photonic crystals of a first and a second type (101, 102). a first and a second electrode (40, 11) for applying a voltage across an active region, disposed between a first type semiconductor layer and a second type semiconductor layer for generation of light, a light emitting surface for emitting said light, and a plurality of photonic crystals (101, 102) disposed between said light emitting surface and said active region, wherein at least two photonic crystals (101, 102) of a first and a second type, selected among said plurality of photonic crystals (101, 102), are adapted to extract light from said active region and differ from each other with respect to at least one lattice parameter, each of said at least two photonic crystals (101, 102) being associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102), such that a far field pattern from the light generated in the LED is created by combining said respective far field patterns associated with each of said at least two photonic crystals (101, 102), characterized in that, said second electrode comprises sub-electrodes, (41, 42, 43, 44, 45) disposed on the opposite side of said active region compared to said light emitting surface, wherein a first and a second sub-electrode (41, 42, 43, 44, 45) are associated with a respective photonic crystal of the first and second type, (101, 102) respectively, said first and second sub-electrodes (41, 42, 43, 44, 45) being individually controllable by means of applying a respective voltage to each of said first and second sub-electrodes (41, 42, 43, 44, 45) whereby the far field pattern of said LED is dynamically controllable due to difference between far field patterns from said photonic crystals of a first and a second type (101, 102).