A superconducting logic element, comprising: - a superconducting tunnel junction comprising a first superconductor layer and a second superconductor layer; - a first insulating ferromagnet layer in direct contact with said first superconductor layer, configured to generate by magnetic proximity effect a predetermined density of spin-split states in said first superconductor layer; - a second insulating ferromagnet layer in direct contact with said second superconductor layer, configured to generate by magnetic proximity effect a predetermined density of spin-split states in said second superconductor layer; - a writing current supply, configured to apply a writing current to a superconductor layer (20,30,70,75) in direct contact with one of said first or second insulating ferromagnet layer (40,50), so that said first insulating ferromagnet layer in direct contact with said first superconductor layer and said second insulating ferromagnet layer in direct contact with said second superconductor layer commute between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other by the magnetic field (165,185) generated by the applied writing current (160,180); - a reading element (100, 110) configured to provide a reading voltage bias between said first and said second superconductor layers (20,30) and to provide a measurement signal of a dissipative high- or low-conductance state through said superconducting tunnel junction, respectively, responsive to said parallel or antiparallel magnetization, by absolute spin valve effect, wherein - said superconducting tunnel junction consists of said first superconductor layer, said second superconductor layer and a further insulating layer, said further insulating layer being arranged with tunnel barrier function between said first superconductor layer and said second superconductor layer and being selected from the group consisting of: AlOx, AlN. - a superconducting tunnel junction comprising a first superconductor layer and a second superconductor layer; - a first insulating ferromagnet layer in direct contact with said first superconductor layer, configured to generate by magnetic proximity effect a predetermined density of spin-split states in said first superconductor layer; - a second insulating ferromagnet layer in direct contact with said second superconductor layer, configured to generate by magnetic proximity effect a predetermined density of spin-split states in said second superconductor layer; - a writing current supply, configured to apply a writing current to a superconductor layer (20,30,70,75) in direct contact with one of said first or second insulating ferromagnet layer (40,50), so that said first insulating ferromagnet layer in direct contact with said first superconductor layer and said second insulating ferromagnet layer in direct contact with said second superconductor layer commute between a state with parallel magnetization to a state with antiparallel magnetization with respect to each other by the magnetic field (165,185) generated by the applied writing current (160,180); - a reading element (100, 110) configured to provide a reading voltage bias between said first and said second superconductor layers (20,30) and to provide a measurement signal of a dissipative high- or low-conductance state through said superconducting tunnel junction, respectively, responsive to said parallel or antiparallel magnetization, by absolute spin valve effect, wherein - said superconducting tunnel junction consists of said first superconductor layer, said second superconductor layer and a further insulating layer, said further insulating layer being arranged with tunnel barrier function between said first superconductor layer and said second superconductor layer and being selected from the group consisting of: AlOx, AlN.