An avalanche photodiode (300, 301, 302, 303, 304, 305) comprising: a semi-insulating substrate (1, 31); a first mesa comprising a first laminate constitution in which a p-type electrode layer (2, 32), a p-type light absorbing layer (3A, 33A), a light absorbing layer (3B, 33B) with a low impurity concentration, a band gap inclined layer (4, 34), a p-type electric field control layer (5, 35), an avalanche multiplier layer (6, 36), an n-type electric field control layer (7A, 37A), and an electron transit layer (7B, 37B) with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate (1, 31); a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer (8A, 38A) and an n-type electrode layer (8B, 28B, 38B) are stacked in this order on a surface on the electron transit layer (7B, 37B) side of the first mesa; and a depletion control region (11, 11') that is provided in layers on the second mesa side of the p-type electric field control layer (5, 35) of the first mesa, formed in an encircling portion provided inside the first mesa, the encircling portion extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, and prevents an encircling portion of the p-type electric field control layer (5, 35) from being depleted when bias is applied, the encircling portion of the p-type electric field control layer (5, 35) extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, wherein the depletion control region (11, 11') is formed by inactivating a donor in an encircling portion of the n-type electric field control layer (7A, 37A), the encircling portion of the n-type electric field control layer (7A, 37A) extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction. a semi-insulating substrate (1, 31); a first mesa comprising a first laminate constitution in which a p-type electrode layer (2, 32), a p-type light absorbing layer (3A, 33A), a light absorbing layer (3B, 33B) with a low impurity concentration, a band gap inclined layer (4, 34), a p-type electric field control layer (5, 35), an avalanche multiplier layer (6, 36), an n-type electric field control layer (7A, 37A), and an electron transit layer (7B, 37B) with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate (1, 31); a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer (8A, 38A) and an n-type electrode layer (8B, 28B, 38B) are stacked in this order on a surface on the electron transit layer (7B, 37B) side of the first mesa; and a depletion control region (11, 11') that is provided in layers on the second mesa side of the p-type electric field control layer (5, 35) of the first mesa, formed in an encircling portion provided inside the first mesa, the encircling portion extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, and prevents an encircling portion of the p-type electric field control layer (5, 35) from being depleted when bias is applied, the encircling portion of the p-type electric field control layer (5, 35) extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction, wherein the depletion control region (11, 11') is formed by inactivating a donor in an encircling portion of the n-type electric field control layer (7A, 37A), the encircling portion of the n-type electric field control layer (7A, 37A) extends between an outer circumference of the first mesa and an outer circumference of the second mesa as viewed from a laminating direction.