A method for manufacturing a crystalline silicon-based solar cell, the crystalline silicon-based solar cell comprising: a conductive single-crystalline silicon substrate; and an intrinsic silicon-based thin-film and a conductive silicon-based thin-film disposed in this order on a first principal surface of the conductive single-crystalline silicon substrate, the conductive single-crystalline silicon substrate having a pyramidal texture on the first principal surface the method comprising: performing plasma treatment in a state where a plurality of conductive single-crystalline silicon substrates (1L, 1C, 1R) each provided with an intrinsic silicon-based layer (120L, 120C, 120R) on a surface thereof are disposed in a CVD chamber, wherein the intrinsic silicon-based layer on the surface of the conductive single crystalline silicon substrate is intrinsic amorphous silicon, in the plasma treatment, a hydrogen gas and a silicon-containing gas are introduced into the CVD chamber, and a surface of the intrinsic silicon-based layer is exposed to hydrogen plasma, wherein an amount of hydrogen gas introduced into the CVD chamber during the plasma treatment is 150 to 2500 times an introduction amount of the silicon-containing gas, a thin-film (129L, 129C, 129R) is formed on the intrinsic silicon-based layer (125L, 125C, 125R) at least at a texture valley portion by the plasma treatment, thereby completing formation of the intrinsic silicon-based thin-film (12L, 12C, 12R); and wherein the thin-film formed by the plasma treatment is intrinsic amorphous silicon. the crystalline silicon-based solar cell comprising: a conductive single-crystalline silicon substrate; and an intrinsic silicon-based thin-film and a conductive silicon-based thin-film disposed in this order on a first principal surface of the conductive single-crystalline silicon substrate, the conductive single-crystalline silicon substrate having a pyramidal texture on the first principal surface the method comprising: performing plasma treatment in a state where a plurality of conductive single-crystalline silicon substrates (1L, 1C, 1R) each provided with an intrinsic silicon-based layer (120L, 120C, 120R) on a surface thereof are disposed in a CVD chamber, wherein the intrinsic silicon-based layer on the surface of the conductive single crystalline silicon substrate is intrinsic amorphous silicon, in the plasma treatment, a hydrogen gas and a silicon-containing gas are introduced into the CVD chamber, and a surface of the intrinsic silicon-based layer is exposed to hydrogen plasma, wherein an amount of hydrogen gas introduced into the CVD chamber during the plasma treatment is 150 to 2500 times an introduction amount of the silicon-containing gas, a thin-film (129L, 129C, 129R) is formed on the intrinsic silicon-based layer (125L, 125C, 125R) at least at a texture valley portion by the plasma treatment, thereby completing formation of the intrinsic silicon-based thin-film (12L, 12C, 12R); and wherein the thin-film formed by the plasma treatment is intrinsic amorphous silicon. performing plasma treatment in a state where a plurality of conductive single-crystalline silicon substrates (1L, 1C, 1R) each provided with an intrinsic silicon-based layer (120L, 120C, 120R) on a surface thereof are disposed in a CVD chamber, wherein the intrinsic silicon-based layer on the surface of the conductive single crystalline silicon substrate is intrinsic amorphous silicon, in the plasma treatment, a hydrogen gas and a silicon-containing gas are introduced into the CVD chamber, and a surface of the intrinsic silicon-based layer is exposed to hydrogen plasma, wherein an amount of hydrogen gas introduced into the CVD chamber during the plasma treatment is 150 to 2500 times an introduction amount of the silicon-containing gas, a thin-film (129L, 129C, 129R) is formed on the intrinsic silicon-based layer (125L, 125C, 125R) at least at a texture valley portion by the plasma treatment, thereby completing formation of the intrinsic silicon-based thin-film (12L, 12C, 12R); and wherein the thin-film formed by the plasma treatment is intrinsic amorphous silicon.