A semiconductor device (200, 300) applied as an ESD device comprising: a substrate, comprising: - a well (W_1) of type one; - a first doped region (D_21) of type two, provided in the well (W_1) of type one; - a well (W_2) of type two, adjacent to the well (W_1) of type one; - a first doped region (D 11) of type one, doped in the well (W_2) of type two; - a third doped region (D_13) of type one, doped in the well (W_1) of type one, not physically touching the first doped region (D_21) of type two; and - a third doped region (D_23) of type two, doped in the well (W_2) of type two, physically touching the first doped region (D_11) of type one, such that the substrate does not comprise isolating material provided in a current path (Cp) formed by the first doped region (D_21) of type two, the well (W_1) of type one, the well (W_2) of type two and the first doped region (D_11) of type one, and further comprising: - a first conductive material (CM_1), provided on the well (W_1) of type one and the well (W_2) of type two but not on the first doped region (D_11) of type one and the first doped region (D_21) of type two; - a second conductive layer (CM_2), provided on the well (W_2) of type two but not on the first doped region (D_11) of type one; - a second doped region (D_12) of type one, provided in the well (W_2) of type two; and - a second doped region (D_22) of type two, provided in the well (W_2) of type two; wherein: - the second doped region (D_22) of type two and the second doped region (D_12) of type one are provided between the first doped region (D_11) of type one and the first doped region (D_21) of type two; - wherein the first conductive material (CM_1) is provided on a region between the first doped region (D_21) of type two and the second doped region of type two (D_22); and - wherein the second conductive material (CM_2) is provided on a region between the first doped region (D_11) of type one and the second doped region (D_12) of type one. a substrate, comprising: - a well (W_1) of type one; - a first doped region (D_21) of type two, provided in the well (W_1) of type one; - a well (W_2) of type two, adjacent to the well (W_1) of type one; - a first doped region (D 11) of type one, doped in the well (W_2) of type two; - a third doped region (D_13) of type one, doped in the well (W_1) of type one, not physically touching the first doped region (D_21) of type two; and - a third doped region (D_23) of type two, doped in the well (W_2) of type two, physically touching the first doped region (D_11) of type one, - a well (W_1) of type one; - a first doped region (D_21) of type two, provided in the well (W_1) of type one; - a well (W_2) of type two, adjacent to the well (W_1) of type one; - a first doped region (D 11) of type one, doped in the well (W_2) of type two; - a third doped region (D_13) of type one, doped in the well (W_1) of type one, not physically touching the first doped region (D_21) of type two; and - a third doped region (D_23) of type two, doped in the well (W_2) of type two, physically touching the first doped region (D_11) of type one, such that the substrate does not comprise isolating material provided in a current path (Cp) formed by the first doped region (D_21) of type two, the well (W_1) of type one, the well (W_2) of type two and the first doped region (D_11) of type one, and further comprising: - a first conductive material (CM_1), provided on the well (W_1) of type one and the well (W_2) of type two but not on the first doped region (D_11) of type one and the first doped region (D_21) of type two; - a second conductive layer (CM_2), provided on the well (W_2) of type two but not on the first doped region (D_11) of type one; - a second doped region (D_12) of type one, provided in the well (W_2) of type two; and - a second doped region (D_22) of type two, provided in the well (W_2) of type two; - a first conductive material (CM_1), provided on the well (W_1) of type one and the well (W_2) of type two but not on the first doped region (D_11) of type one and the first doped region (D_21) of type two; - a second conductive layer (CM_2), provided on the well (W_2) of type two but not on the first doped region (D_11) of type one; - a second doped region (D_12) of type one, provided in the well (W_2) of type two; and - a second doped region (D_22) of type two, provided in the well (W_2) of type two; wherein: - the second doped region (D_22) of type two and the second doped region (D_12) of type one are provided between the first doped region (D_11) of type one and the first doped region (D_21) of type two; - wherein the first conductive material (CM_1) is provided on a region between the first doped region (D_21) of type two and the second doped region of type two (D_22); and - wherein the second conductive material (CM_2) is provided on a region between the first doped region (D_11) of type one and the second doped region (D_12) of type one. - the second doped region (D_22) of type two and the second doped region (D_12) of type one are provided between the first doped region (D_11) of type one and the first doped region (D_21) of type two; - wherein the first conductive material (CM_1) is provided on a region between the first doped region (D_21) of type two and the second doped region of type two (D_22); and - wherein the second conductive material (CM_2) is provided on a region between the first doped region (D_11) of type one and the second doped region (D_12) of type one.