A non-volatile storage device, comprising: non-volatile storage elements including a first block of non-volatile storage elements (Block S) and a second block of non-volatile storage elements (Block D) adjacent to the first block of non-volatile storage elements, the non-volatile storage elements further include a third block of non-volatile storage elements (Block H) adjacent to the first block of non-volatile storage elements and not adjacent to the second block of non-volatile storage elements; bit lines including a first set of bit lines connected to the first block of non-volatile storage elements, a second set of bit lines connected to the second block of non-volatile storage elements and a third set of bit lines connected to the third block of non-volatile storage elements; a first set of word lines, each word line of the first set is connected to non-volatile storage elements of the first block and non-volatile storage elements of the second block; a second set of word lines, each word line of the second set is connected to non-volatile storage elements of the first block and non-volatile storage elements of the third block without being connected to non-volatile storage elements of the second block; word line drivers (WL-Driver) positioned between the first block of non-volatile storage elements and the second block of non-volatile storage elements, the word line drivers are connected to the first set of word lines; local data lines (SELB) in selective communication with the bit lines connected to the non-volatile storage elements; global data lines (GSELB, GSELB0, GSELB1); one or more first selection circuits (MUX 301) that selectively connect the global data lines to selected local data lines and connect unselected local data lines to one or more unselected bit line signals; and characterised by control circuitry in communication with the one or more first selection circuits and the global data lines, the control circuitry concurrently programs non-volatile storage elements of the first block and non-volatile storage elements of the second block that are connected to a common word line of the first set of word lines using the word line drivers and the global data lines via the one or more first selection circuits, when the control circuitry concurrently programs non-volatile storage elements of the first block and non-volatile storage elements of the second block that are connected to the common word line the control circuitry does not concurrently program non-volatile storage elements of the third block. non-volatile storage elements including a first block of non-volatile storage elements (Block S) and a second block of non-volatile storage elements (Block D) adjacent to the first block of non-volatile storage elements, the non-volatile storage elements further include a third block of non-volatile storage elements (Block H) adjacent to the first block of non-volatile storage elements and not adjacent to the second block of non-volatile storage elements; bit lines including a first set of bit lines connected to the first block of non-volatile storage elements, a second set of bit lines connected to the second block of non-volatile storage elements and a third set of bit lines connected to the third block of non-volatile storage elements; a first set of word lines, each word line of the first set is connected to non-volatile storage elements of the first block and non-volatile storage elements of the second block; a second set of word lines, each word line of the second set is connected to non-volatile storage elements of the first block and non-volatile storage elements of the third block without being connected to non-volatile storage elements of the second block; word line drivers (WL-Driver) positioned between the first block of non-volatile storage elements and the second block of non-volatile storage elements, the word line drivers are connected to the first set of word lines; local data lines (SELB) in selective communication with the bit lines connected to the non-volatile storage elements; global data lines (GSELB, GSELB0, GSELB1); one or more first selection circuits (MUX 301) that selectively connect the global data lines to selected local data lines and connect unselected local data lines to one or more unselected bit line signals; and characterised by control circuitry in communication with the one or more first selection circuits and the global data lines, the control circuitry concurrently programs non-volatile storage elements of the first block and non-volatile storage elements of the second block that are connected to a common word line of the first set of word lines using the word line drivers and the global data lines via the one or more first selection circuits, when the control circuitry concurrently programs non-volatile storage elements of the first block and non-volatile storage elements of the second block that are connected to the common word line the control circuitry does not concurrently program non-volatile storage elements of the third block.