A radiographic image detection device comprising a photoelectric conversion panel and a scintillator, the photoelectric conversion panel and the scintillator being disposed in this order from a radiation incidence side on which radiation from a radiation source is incident at the time of imaging, the photoelectric conversion panel comprising: an insulating substrate; a plurality of switching elements formed over the insulating substrate; a first planarizing film formed to cover the switching elements and having a planarized surface; a plurality of photodiodes formed over the first planarizing film; and a second planarizing film formed to cover the photodiodes and the first planarizing film and having a planarized surface; the scintillator comprising: a non-columnar crystal layer and a plurality of columnar crystals formed on the non-columnar crystal layer, the non-columnar crystal layer being disposed on a photoelectric conversion panel side compared with the columnar crystals; cesium iodide vapor-deposited on a vapor deposition area, the vapor deposition area extending over the second planarizing film and located inside a first edge of the first planarizing film and a second edge of the second planarizing film and covering an area in which the switching elements and the photodiodes are formed; and a support plate for supporting the scintillator, the support plate being fixed to a surface, of the scintillator, on which the photoelectric conversion panel is not disposed, characterized in that the photoelectric conversion panel has a bias line for supplying a bias voltage to the each photodiode, and the bias line is formed between the each photodiode and the insulating substrate.. the photoelectric conversion panel comprising: an insulating substrate; a plurality of switching elements formed over the insulating substrate; a first planarizing film formed to cover the switching elements and having a planarized surface; a plurality of photodiodes formed over the first planarizing film; and a second planarizing film formed to cover the photodiodes and the first planarizing film and having a planarized surface; an insulating substrate; a plurality of switching elements formed over the insulating substrate; a first planarizing film formed to cover the switching elements and having a planarized surface; a plurality of photodiodes formed over the first planarizing film; and a second planarizing film formed to cover the photodiodes and the first planarizing film and having a planarized surface; the scintillator comprising: a non-columnar crystal layer and a plurality of columnar crystals formed on the non-columnar crystal layer, the non-columnar crystal layer being disposed on a photoelectric conversion panel side compared with the columnar crystals; cesium iodide vapor-deposited on a vapor deposition area, the vapor deposition area extending over the second planarizing film and located inside a first edge of the first planarizing film and a second edge of the second planarizing film and covering an area in which the switching elements and the photodiodes are formed; and a non-columnar crystal layer and a plurality of columnar crystals formed on the non-columnar crystal layer, the non-columnar crystal layer being disposed on a photoelectric conversion panel side compared with the columnar crystals; cesium iodide vapor-deposited on a vapor deposition area, the vapor deposition area extending over the second planarizing film and located inside a first edge of the first planarizing film and a second edge of the second planarizing film and covering an area in which the switching elements and the photodiodes are formed; and a support plate for supporting the scintillator, the support plate being fixed to a surface, of the scintillator, on which the photoelectric conversion panel is not disposed,