A method for localizing open defects in electronic devices, comprising the steps of: (a) adapting a Direct Current Superconducting Quantum Interference Device (SQUID) based magnetometer to operate at a Radio Frequency bandwidth of 200 MHz and higher, said adapting comprising: (i) inductively coupling an RF flux Φ RF sin (ω RF t + φ RF) emanating from said electronic device under study and superimposed on a low-frequency modulation flux Φ m sin (ω m t + φ m) to a DC SQUID, wherein Φ m, ω m and φ m, are an amplitude, frequency, and phase of said modulation flux, respectively, and Φ RF, ω RF and φ RF, are an amplitude, frequency and phase of said RF flux received from the electronic device under study, respectively, (j) acquiring, at an output of said DC SQUID, an output RF voltage binary phase modulated at said frequency ω m, between 0° and 180°, (k) demultiplexing said output RF voltage into an RF signal component and a low-frequency signal component, and demodulating sequentially said RF signal component of said binary phase modulated output RF voltage at a first demodulation unit and a second demodulation unit referenced to said ω RF and ω m, respectively, whereby at an output of said second demodulation unit, an output signal representative of said RF flux emanating from said electronic device under study is obtained; (b) coupling an RF power to an electronic device under study; (c) scanning said DC SQUID based RF magnetometer over said electronic device under study; (d) acquiring images of currents produced in a conducting path layout in said electronic device under study; (e) aligning said current images with an image of said conducting path layout; and (f) pinpointing an open defect at a location of current: disappearance on said current images correlated to said conducting path layout. (a) adapting a Direct Current Superconducting Quantum Interference Device (SQUID) based magnetometer to operate at a Radio Frequency bandwidth of 200 MHz and higher, said adapting comprising: (i) inductively coupling an RF flux Φ RF sin (ω RF t + φ RF) emanating from said electronic device under study and superimposed on a low-frequency modulation flux Φ m sin (ω m t + φ m) to a DC SQUID, wherein Φ m, ω m and φ m, are an amplitude, frequency, and phase of said modulation flux, respectively, and Φ RF, ω RF and φ RF, are an amplitude, frequency and phase of said RF flux received from the electronic device under study, respectively, (j) acquiring, at an output of said DC SQUID, an output RF voltage binary phase modulated at said frequency ω m, between 0° and 180°, (k) demultiplexing said output RF voltage into an RF signal component and a low-frequency signal component, and demodulating sequentially said RF signal component of said binary phase modulated output RF voltage at a first demodulation unit and a second demodulation unit referenced to said ω RF and ω m, respectively, whereby at an output of said second demodulation unit, an output signal representative of said RF flux emanating from said electronic device under study is obtained; (i) inductively coupling an RF flux Φ RF sin (ω RF t + φ RF) emanating from said electronic device under study and superimposed on a low-frequency modulation flux Φ m sin (ω m t + φ m) to a DC SQUID, wherein Φ m, ω m and φ m, are an amplitude, frequency, and phase of said modulation flux, respectively, and Φ RF, ω RF and φ RF, are an amplitude, frequency and phase of said RF flux received from the electronic device under study, respectively, (j) acquiring, at an output of said DC SQUID, an output RF voltage binary phase modulated at said frequency ω m, between 0° and 180°, (k) demultiplexing said output RF voltage into an RF signal component and a low-frequency signal component, and demodulating sequentially said RF signal component of said binary phase modulated output RF voltage at a first demodulation unit and a second demodulation unit referenced to said ω RF and ω m, respectively, whereby at an output of said second demodulation unit, an output signal representative of said RF flux emanating from said electronic device under study is obtained; (b) coupling an RF power to an electronic device under study; (c) scanning said DC SQUID based RF magnetometer over said electronic device under study; (d) acquiring images of currents produced in a conducting path layout in said electronic device under study; (e) aligning said current images with an image of said conducting path layout; and (f) pinpointing an open defect at a location of current: disappearance on said current images correlated to said conducting path layout.