A tunnel magnetoresistance, TMR, element, comprising: a cap layer; a bias layer in direct contact with the cap layer, the bias layer comprising: a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a free layer in direct contact with the bias layer, the free layer comprising: a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a magnesium oxide, MgO, layer in direct contact with the first CoFeB layer; a reference layer in direct contact with the MgO layer, the reference layer comprising: a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a seed layer in direct contact with the second PtMn layer, wherein the first PtMn layer pins the bias layer, and wherein the second PtMn layer pins the fourth CoFe layer, and wherein a thickness of each of the first and second Ta layers is between 0.05 nanometers and 0.3 nanometers. a cap layer; a bias layer in direct contact with the cap layer, the bias layer comprising: a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a first platinum manganese, PtMn, layer in direct contact with the cap layer; a first cobalt iron, CoFe, layer in direct contact with the first PtMn layer; and a first ruthenium, Ru, layer in direct contact with the first CoFe layer; a free layer in direct contact with the bias layer, the free layer comprising: a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a nickel iron, NiFe, layer in direct contact with the first Ru layer; a second CoFe layer in direct contact with the NiFe layer; a first tantalum, Ta, layer in direct contact with the second CoFe layer; and a first cobalt iron boron, CoFeB, layer in direct contact with the first Ta layer; a magnesium oxide, MgO, layer in direct contact with the first CoFeB layer; a reference layer in direct contact with the MgO layer, the reference layer comprising: a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a second CoFeB layer in direct contact with the MgO layer; a second Ta layer in direct contact with the second CoFeB layer; a third CoFe layer in direct contact with the second Ta layer; a second Ru layer in direct contact with the third CoFe layer; a fourth CoFe layer in direct contact with the second Ru layer; and a second PtMn layer in direct contact with the fourth CoFe layer; and a seed layer in direct contact with the second PtMn layer, wherein the first PtMn layer pins the bias layer, and wherein the second PtMn layer pins the fourth CoFe layer,