A method for manufacturing a vibration sensor (61, 62) comprising: forming a sacrifice layer (23, 32, 44a to 44e) at one part of a front surface of a semiconductor substrate made of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate; forming a thin film protective film (20, 24, 25, 34, 35, 45, 49) with a material having resistance to the etchant on the sacrifice layer (23, 32, 44a to 44e) and the front surface of the semiconductor substrate at a periphery of the sacrifice layer (23, 32, 44a to 44e); forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer (23, 32, 44a to 44e); opening a backside etching window (26, 50) in a back surface protective film (21, 33, 46) having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate; forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer (23, 32, 44a to 44e) isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer (23, 32, 44a to 44e) is removed; and forming at least one vent hole for putting the front side in communication with the back side of the thin film and at least one holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film (20, 24, 25, 34, 35, 45, 49) partially. forming a sacrifice layer (23, 32, 44a to 44e) at one part of a front surface of a semiconductor substrate made of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate; forming a thin film protective film (20, 24, 25, 34, 35, 45, 49) with a material having resistance to the etchant on the sacrifice layer (23, 32, 44a to 44e) and the front surface of the semiconductor substrate at a periphery of the sacrifice layer (23, 32, 44a to 44e); forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer (23, 32, 44a to 44e); opening a backside etching window (26, 50) in a back surface protective film (21, 33, 46) having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate; forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer (23, 32, 44a to 44e) isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer (23, 32, 44a to 44e) is removed; and forming at least one vent hole for putting the front side in communication with the back side of the thin film and at least one holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film (20, 24, 25, 34, 35, 45, 49) partially.