An image sensor, comprising: a plurality of pixels, wherein each of the plurality of pixels includes: a first semiconductor area (311, 321, 351), forming a first sub-pixel; a second semiconductor area (312, 322, 352), having a polarity different from a polarity of the first semiconductor area (311, 321, 351), forming a second sub-pixel; and a third semiconductor area, having a polarity equal to the polarity of the first semiconductor area (311, 321, 351) and arranged between the pixel and an adjacent pixel; and wherein the first semiconductor area (311, 321, 351) is included in the second semiconductor area (312, 322, 352) and the second semiconductor area (312, 322, 352) is included in the third semiconductor area, characterized in that each of the plurality of pixels further includes a microlens, wherein a center of gravity position of a light-receiving surface defining the first semiconductor area (311, 321, 351) is different from a center of gravity position of a light-receiving surface defining a combination of both the first semiconductor area (311, 321, 351) and the second semiconductor area (312, 322, 352), and wherein the center of gravity position of a light-receiving surface defining the combination of both the first semiconductor area (311, 321, 351) and the second semiconductor area (312, 322, 352) substantially coincides with the optical axis of the microlens, and the center of gravity position of a light-receiving surface defining the first semiconductor area (311, 321, 351) is shifted from the optical axis of the microlens. a plurality of pixels, wherein each of the plurality of pixels includes: a first semiconductor area (311, 321, 351), forming a first sub-pixel; a second semiconductor area (312, 322, 352), having a polarity different from a polarity of the first semiconductor area (311, 321, 351), forming a second sub-pixel; and a third semiconductor area, having a polarity equal to the polarity of the first semiconductor area (311, 321, 351) and arranged between the pixel and an adjacent pixel; and wherein the first semiconductor area (311, 321, 351) is included in the second semiconductor area (312, 322, 352) and the second semiconductor area (312, 322, 352) is included in the third semiconductor area, characterized in that a first semiconductor area (311, 321, 351), forming a first sub-pixel; a second semiconductor area (312, 322, 352), having a polarity different from a polarity of the first semiconductor area (311, 321, 351), forming a second sub-pixel; and a third semiconductor area, having a polarity equal to the polarity of the first semiconductor area (311, 321, 351) and arranged between the pixel and an adjacent pixel; and wherein the first semiconductor area (311, 321, 351) is included in the second semiconductor area (312, 322, 352) and the second semiconductor area (312, 322, 352) is included in the third semiconductor area, characterized in that each of the plurality of pixels further includes a microlens, wherein a center of gravity position of a light-receiving surface defining the first semiconductor area (311, 321, 351) is different from a center of gravity position of a light-receiving surface defining a combination of both the first semiconductor area (311, 321, 351) and the second semiconductor area (312, 322, 352), and wherein the center of gravity position of a light-receiving surface defining the combination of both the first semiconductor area (311, 321, 351) and the second semiconductor area (312, 322, 352) substantially coincides with the optical axis of the microlens, and the center of gravity position of a light-receiving surface defining the first semiconductor area (311, 321, 351) is shifted from the optical axis of the microlens.