An avalanche photodiode comprising: a semi-insulating substrate; a first mesa comprising a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate; and a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and the second mesa having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, characterized in that a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2 × 10 11 to 1 × 10 12 /cm 2, wherein the n-type electrode buffer layer is made from InGaAsP and a donor concentration of the n-type electrode buffer layer is in a range of 2 x 10 16 to 1 x 10 17 /cm 3, and a required minimum concentration difference between the total donor concentration of the n-type electric field control layer and the total acceptor concentration of the p-type electric field control layer is based on a condition, in which a p-type neutral layer remains in a portion of the p-type electric field control layer, wherein a bulk acceptor concentration of the p-type electric field control layer is set to approximately 2 × 10 17 to 8 × 10 17 /cm 3, wherein the extent of spatial blurring of holes in the p-type neutral layer at these concentrations can be taken as an estimate based on a Debye screening length, which is 100 to 50 Angstrom. a semi-insulating substrate; a first mesa comprising a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate; and a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and the second mesa having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, characterized in that a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2 × 10 11 to 1 × 10 12 /cm 2, wherein the n-type electrode buffer layer is made from InGaAsP and a donor concentration of the n-type electrode buffer layer is in a range of 2 x 10 16 to 1 x 10 17 /cm 3, and a required minimum concentration difference between the total donor concentration of the n-type electric field control layer and the total acceptor concentration of the p-type electric field control layer is based on a condition, in which a p-type neutral layer remains in a portion of the p-type electric field control layer, wherein a bulk acceptor concentration of the p-type electric field control layer is set to approximately 2 × 10 17 to 8 × 10 17 /cm 3, wherein the extent of spatial blurring of holes in the p-type neutral layer at these concentrations can be taken as an estimate based on a Debye screening length, which is 100 to 50 Angstrom.