Method for manufacturing a microfluidic device, comprising the following steps: - providing a first substrate having a first surface and a second surface lying opposite the first surface; - producing an etching mask on the first surface, wherein the etching mask has an opening; - producing, by means of etching, a recess in the first surface in the region of the opening; - depositing an electrically conductive material onto the etching mask and/or a layer covering the etching mask and onto a region of a bottom of the recess below the opening, characterized in that the method comprises the following steps before the depositing of the electrically conductive material: - applying a photoresist (3, 3b) to the etching mask and to a region of a bottom of the recess below the opening; - removing the photoresist from the recess, wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess, wherein the exposure takes place through the second surface; o the first substrate is transparent to light suitable for an exposure of the photoresist (3, 3b); and o the etching mask is not transparent to light that is suitable for the exposure of the photoresist (3, 3b). - providing a first substrate having a first surface and a second surface lying opposite the first surface; - producing an etching mask on the first surface, wherein the etching mask has an opening; - producing, by means of etching, a recess in the first surface in the region of the opening; - depositing an electrically conductive material onto the etching mask and/or a layer covering the etching mask and onto a region of a bottom of the recess below the opening, characterized in that the method comprises the following steps before the depositing of the electrically conductive material: - applying a photoresist (3, 3b) to the etching mask and to a region of a bottom of the recess below the opening; - removing the photoresist from the recess, wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess, wherein the exposure takes place through the second surface; o the first substrate is transparent to light suitable for an exposure of the photoresist (3, 3b); and o the etching mask is not transparent to light that is suitable for the exposure of the photoresist (3, 3b). - applying a photoresist (3, 3b) to the etching mask and to a region of a bottom of the recess below the opening; - removing the photoresist from the recess, wherein the electrically conductive material is then deposited onto the photoresist covering the etching mask and onto the region of the bottom of the recess below the opening; and wherein o the removal of the photoresist from the recess comprises exposing the photoresist in the recess, wherein the exposure takes place through the second surface; o the first substrate is transparent to light suitable for an exposure of the photoresist (3, 3b); and o the etching mask is not transparent to light that is suitable for the exposure of the photoresist (3, 3b). o the removal of the photoresist from the recess comprises exposing the photoresist in the recess, wherein the exposure takes place through the second surface; o the first substrate is transparent to light suitable for an exposure of the photoresist (3, 3b); and o the etching mask is not transparent to light that is suitable for the exposure of the photoresist (3, 3b).