A driver circuit for controlling a semiconductor power switch driving an electric load in the form of a motor, the driver circuit comprising: a first power driver transistor and a second power driver transistor, complementary to the first power driver transistor; the first and second power driver transistors (Q6, Q5) each having a respective output terminal, drain, connected to a node connected to an input terminal, base, of the semiconductor power switch in the form of a bipolar transistor, wherein an output terminal, collector, of the semiconductor power switch is connected to the motor and another terminal, emitter, of the semiconductor power switch is connected to a DC power source, an input terminal, gate, of the second power driver transistor is connected to a half bridge circuit comprising a first pre-driver transistor and a second pre-driver transistor, complementary to the first pre-driver transistor; the first and second pre-driver transistors (Q3, Q4) each having a respective output terminal, drain, connected to a node connected to the input terminal, gate, of the second power driver transistor, wherein the first pre-driver transistor is a P-channel metal-oxide-semiconductor field-effect transistor and the second pre-driver transistor is an N-channel metal-oxide-semiconductor field-effect transistor, further comprising a voltage limiter connected between the output terminal (drain) of the second pre-driver transistor and the node connected to the output terminal (drain) of the first pre-driver transistor and the input terminal, gate, of the second power driver transistor, and by a pull-up resistor connected between a source terminal of the first pre-driver transistor and a supply voltage, the pull-up resistor sized based on the switching speed requirement for the second power driver transistor. a first power driver transistor and a second power driver transistor, complementary to the first power driver transistor; the first and second power driver transistors (Q6, Q5) each having a respective output terminal, drain, connected to a node connected to an input terminal, base, of the semiconductor power switch in the form of a bipolar transistor, wherein an output terminal, collector, of the semiconductor power switch is connected to the motor and another terminal, emitter, of the semiconductor power switch is connected to a DC power source, an input terminal, gate, of the second power driver transistor is connected to a half bridge circuit comprising a first pre-driver transistor and a second pre-driver transistor, complementary to the first pre-driver transistor; the first and second pre-driver transistors (Q3, Q4) each having a respective output terminal, drain, connected to a node connected to the input terminal, gate, of the second power driver transistor, wherein the first pre-driver transistor is a P-channel metal-oxide-semiconductor field-effect transistor and the second pre-driver transistor is an N-channel metal-oxide-semiconductor field-effect transistor, further comprising a voltage limiter connected between the output terminal (drain) of the second pre-driver transistor and the node connected to the output terminal (drain) of the first pre-driver transistor and the input terminal, gate, of the second power driver transistor, and by a pull-up resistor connected between a source terminal of the first pre-driver transistor and a supply voltage, the pull-up resistor sized based on the switching speed requirement for the second power driver transistor.