A semiconductor device comprising: a first region of semiconductor material having a first conductivity type and a first dopant concentration; a base well region of semiconductor material within the first region, the base well region having the first conductivity type and a second dopant concentration greater than the first dopant concentration of the first region; a base contact region of semiconductor material within the base well region, the base contact region having the first conductivity type and a third dopant concentration greater than the second dopant concentration; an emitter region of semiconductor material within the base well region, the emitter region having a second conductivity type opposite the first conductivity type; and a collector region of semiconductor material having the second conductivity type; and an isolation region of dielectric material laterally between and contacting each of the emitter region and the collector region, wherein: the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region; a depth of the collector region is greater than a depth of the emitter region; the depth of the collector region is greater than a depth of the base well region; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region. a first region of semiconductor material having a first conductivity type and a first dopant concentration; a base well region of semiconductor material within the first region, the base well region having the first conductivity type and a second dopant concentration greater than the first dopant concentration of the first region; a base contact region of semiconductor material within the base well region, the base contact region having the first conductivity type and a third dopant concentration greater than the second dopant concentration; an emitter region of semiconductor material within the base well region, the emitter region having a second conductivity type opposite the first conductivity type; and a collector region of semiconductor material having the second conductivity type; and an isolation region of dielectric material laterally between and contacting each of the emitter region and the collector region, wherein: the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region; a depth of the collector region is greater than a depth of the emitter region; the depth of the collector region is greater than a depth of the base well region; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region. the isolation region is in an upper surface of the device; at least a portion of the first region underlying the isolation region resides between the base well region and the collector region; a depth of the collector region is greater than a depth of the emitter region; the depth of the collector region is greater than a depth of the base well region; and a depth of a second portion of the first region underlying the emitter region is greater than or equal to the depth of the collector region.