A non-contact physical etching process, comprising the step of: providing a non-contact physical etching system comprising a main body, a partition member arranged to isolate a first chamber and a second chamber of the main body from each other, a hollow chamber having an inlet opening and an outlet opening, the hollow chamber being deposed on the partition chamber such that it simultaneously passes through the first chamber and the second chamber, the hollow chamber having a first portion located in the first chamber and a second portion located in the second chamber, a working gas supplying device connected to the main body, a target carrying platform disposed in the second chamber, a first mask disposed in the second chamber opposite the target carrying platform, the first mask being connected to the hollow chamber and being arranged to shield the outlet opening of the hollow chamber such that, in use, a plasma in the hollow chamber can be avoided from directly moving into the second chamber, wherein the first mask is provided with at least one first pattern formed thereon, the first pattern consisting of at least one first aperture or at least one first string-shaped aperture, a plasma generating device connected to the working gas supplying device and the main body, and an air pressure maintaining device connected to the first chamber and the second chamber; the non-contact physical etching process further comprising the steps of using the first chamber and the second chamber as a plasma supplying chamber and a plasma etching chamber, respectively; carrying a target on the target carrying platform; supplying a working gas into the main body and into the plasma generating device; operating the air pressure maintaining device to pump air out of the first chamber and the second chamber such that the second air pressure in the second chamber is smaller than the first air pressure in the first chamber; transforming the working gas into a plasma and inputting the plasma into the hollow chamber with the plasma generating device; using the first mask as a triggering member such that the plasma in the hollow chamber produces a spontaneous electric field near the surface of the first mask, and maintaining thereby the electrical neutrality of the plasma; producing the spontaneous electric field perpendicular to the surface of the first mask, such that a plurality of charged ions in the plasma are accelerated and pass through the at least one first pattern formed on the first mask; bombarding the target with the accelerated charged ions in order to etch or cut the target. providing a non-contact physical etching system comprising a main body, a partition member arranged to isolate a first chamber and a second chamber of the main body from each other, a hollow chamber having an inlet opening and an outlet opening, the hollow chamber being deposed on the partition chamber such that it simultaneously passes through the first chamber and the second chamber, the hollow chamber having a first portion located in the first chamber and a second portion located in the second chamber, a working gas supplying device connected to the main body, a target carrying platform disposed in the second chamber, a first mask disposed in the second chamber opposite the target carrying platform, the first mask being connected to the hollow chamber and being arranged to shield the outlet opening of the hollow chamber such that, in use, a plasma in the hollow chamber can be avoided from directly moving into the second chamber, wherein the first mask is provided with at least one first pattern formed thereon, the first pattern consisting of at least one first aperture or at least one first string-shaped aperture, a plasma generating device connected to the working gas supplying device and the main body, and an air pressure maintaining device connected to the first chamber and the second chamber; the non-contact physical etching process further comprising the steps of using the first chamber and the second chamber as a plasma supplying chamber and a plasma etching chamber, respectively; carrying a target on the target carrying platform; supplying a working gas into the main body and into the plasma generating device; operating the air pressure maintaining device to pump air out of the first chamber and the second chamber such that the second air pressure in the second chamber is smaller than the first air pressure in the first chamber; transforming the working gas into a plasma and inputting the plasma into the hollow chamber with the plasma generating device; using the first mask as a triggering member such that the plasma in the hollow chamber produces a spontaneous electric field near the surface of the first mask, and maintaining thereby the electrical neutrality of the plasma; producing the spontaneous electric field perpendicular to the surface of the first mask, such that a plurality of charged ions in the plasma are accelerated and pass through the at least one first pattern formed on the first mask; bombarding the target with the accelerated charged ions in order to etch or cut the target.