A method for bonding a first contact surface of a first substrate with a second contact surface of a second with the following sequence: - arrangement of a substrate stack, formed from the first substrate and the second substrate and aligned at the contact surfaces (35k, 36k), between a first heating surface of a first heating system and a second heating surface of a second heating system, wherein a) the first heating surface is arranged facing a first surface of the first substrate, said first surface facing away from the first contact surface, b) the second heating surface is arranged facing a second surface of the second substrate, said the second surface facing away from the second contact surface, c) between the first surface and the first heating surface, there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface, there is a separation distance B > 0 μm, - heating the heating surfaces (15, 19), wherein the substrates (35, 36) are spaced apart from the heating surfaces (15, 19) and the substrates (35, 36) are heated by infrared radiation from the heating surfaces (15, 19), and during the heating the substrate stack converges with the heating surfaces (15, 19) by reducing the separation distances A and B to 0 μm, wherein the substrate stack is heated symmetrically relative to the plane of the contact surface of the substrates of the substrate stack, - forming bond between the first contact surface and the second contact surface by pressurisation of the substrate stack on the surfaces (35o, 36o). - arrangement of a substrate stack, formed from the first substrate and the second substrate and aligned at the contact surfaces (35k, 36k), between a first heating surface of a first heating system and a second heating surface of a second heating system, wherein a) the first heating surface is arranged facing a first surface of the first substrate, said first surface facing away from the first contact surface, b) the second heating surface is arranged facing a second surface of the second substrate, said the second surface facing away from the second contact surface, c) between the first surface and the first heating surface, there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface, there is a separation distance B > 0 μm, a) the first heating surface is arranged facing a first surface of the first substrate, said first surface facing away from the first contact surface, b) the second heating surface is arranged facing a second surface of the second substrate, said the second surface facing away from the second contact surface, c) between the first surface and the first heating surface, there is a separation distance A > 0 μm, and d) between the second surface and the second heating surface, there is a separation distance B > 0 μm, - heating the heating surfaces (15, 19), wherein the substrates (35, 36) are spaced apart from the heating surfaces (15, 19) and the substrates (35, 36) are heated by infrared radiation from the heating surfaces (15, 19), and during the heating the substrate stack converges with the heating surfaces (15, 19) by reducing the separation distances A and B to 0 μm, wherein the substrate stack is heated symmetrically relative to the plane of the contact surface of the substrates of the substrate stack, - forming bond between the first contact surface and the second contact surface by pressurisation of the substrate stack on the surfaces (35o, 36o).