Method for producing a monocrystalline semiconductor material, in particular monocrystalline silicon, comprising the steps of: - providing a starting material composed of the semiconductor material, - transferring the starting material into a heating zone, in which a melt composed of the semiconductor material is fed with the starting material, - lowering the melt from the heating zone and/or raising the heating zone, such that, at the lower end of the melt, a solidification front forms along which the semiconductor material crystallizes in the desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form, in that - particles of the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas flow, wherein the gas flow has sufficiently high temperature to convert the particles of the semiconductor material from the solid to the liquid and/or gaseous state and/or to thermally decompose the precursor compound, - the gas flow is conducted into a reactor container which has a solid bottom region which at least partly consists of the semiconductor material to be produced, in which reactor container the liquid starting material is condensed and/or separated from the gas flow, and - the liquid starting material is fed directly from the reactor container into the melt composed of the semiconductor material, in that the bottom region which at least partly consists of the semiconductor material to be produced is melted in a controlled manner, wherein the melting process is controlled by means of heating and/or cooling media which are arranged in the bottom region or are assigned thereto, and the heating and/or cooling media comprise at least one induction heating system and/or a focusable light beam and/or beam of matter. - providing a starting material composed of the semiconductor material, - transferring the starting material into a heating zone, in which a melt composed of the semiconductor material is fed with the starting material, - lowering the melt from the heating zone and/or raising the heating zone, such that, at the lower end of the melt, a solidification front forms along which the semiconductor material crystallizes in the desired structure, - particles of the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas flow, wherein the gas flow has sufficiently high temperature to convert the particles of the semiconductor material from the solid to the liquid and/or gaseous state and/or to thermally decompose the precursor compound, - the gas flow is conducted into a reactor container which has a solid bottom region which at least partly consists of the semiconductor material to be produced, in which reactor container the liquid starting material is condensed and/or separated from the gas flow, and - the liquid starting material is fed directly from the reactor container into the melt composed of the semiconductor material, in that the bottom region which at least partly consists of the semiconductor material to be produced is melted in a controlled manner, wherein the melting process is controlled by means of heating and/or cooling media which are arranged in the bottom region or are assigned thereto, and the heating and/or cooling media comprise at least one induction heating system and/or a focusable light beam and/or beam of matter.