A pixel element comprising: - a semiconductor substrate of a first or second conductivity type, the semiconductor substrate having a front side and a backside, wherein the semiconductor substrate is configured to be exposed to a flux of photons, and to convert the flux of photons to first and second conductivity-type mobile charges; - a first primary charge-collection node (104, 104a) of a first conductivity-type semiconductor material, arranged on the front side of the semiconductor substrate; - at least one peripheral node of a second conductivity-type semiconductor material, arranged on the front side of the semiconductor substrate, wherein the at least one peripheral node at least partially surrounds the first primary charge-collection node (104, 104a); characterised in that the pixel element comprises: - a circuitry directly connected to the first primary charge-collection node (104, 104a) and to the at least one peripheral node, wherein the circuitry comprises: - a first switch (110a, 122a) to connect and disconnect a first reset voltage (Vr, Vr_a) to/from the first primary charge-collection node (104, 104a); - means to provide a peripheral node voltage to the at least one peripheral node; and - a first measurement means to measure an amount of the first conductivity-type mobile charges collected by the first primary charge-collection node (104, 104a); - a backside conductive layer arranged on the backside of the semiconductor substrate, configured to collect and conduct the second conductivity-type mobile charges, and configured to be electrically connected to a bias voltage (Vbs); and - a first modulating node (105, 105a) of the second conductivity-type semiconductor material, wherein the first modulating node (105, 105a) is: - arranged on the front side of the semiconductor substrate; - at least partially surrounded by the first primary charge-collection node (104, 104a), which first primary charge-collection node is arranged to provide electrical isolation between the first modulating node (105, 105a) and the at least one peripheral node; and - electrically connected to a first modulating voltage (Vm, Vm_a) source, which first modulating voltage source is independent of the peripheral node voltage. - a semiconductor substrate of a first or second conductivity type, the semiconductor substrate having a front side and a backside, wherein the semiconductor substrate is configured to be exposed to a flux of photons, and to convert the flux of photons to first and second conductivity-type mobile charges; - a first primary charge-collection node (104, 104a) of a first conductivity-type semiconductor material, arranged on the front side of the semiconductor substrate; - at least one peripheral node of a second conductivity-type semiconductor material, arranged on the front side of the semiconductor substrate, wherein the at least one peripheral node at least partially surrounds the first primary charge-collection node (104, 104a); characterised in that the pixel element comprises: - a circuitry directly connected to the first primary charge-collection node (104, 104a) and to the at least one peripheral node, wherein the circuitry comprises: - a first switch (110a, 122a) to connect and disconnect a first reset voltage (Vr, Vr_a) to/from the first primary charge-collection node (104, 104a); - means to provide a peripheral node voltage to the at least one peripheral node; and - a first measurement means to measure an amount of the first conductivity-type mobile charges collected by the first primary charge-collection node (104, 104a); - a first switch (110a, 122a) to connect and disconnect a first reset voltage (Vr, Vr_a) to/from the first primary charge-collection node (104, 104a); - means to provide a peripheral node voltage to the at least one peripheral node; and - a first measurement means to measure an amount of the first conductivity-type mobile charges collected by the first primary charge-collection node (104, 104a); - a backside conductive layer arranged on the backside of the semiconductor substrate, configured to collect and conduct the second conductivity-type mobile charges, and configured to be electrically connected to a bias voltage (Vbs); and - a first modulating node (105, 105a) of the second conductivity-type semiconductor material, wherein the first modulating node (105, 105a) is: - arranged on the front side of the semiconductor substrate; - at least partially surrounded by the first primary charge-collection node (104, 104a), which first primary charge-collection node is arranged to provide electrical isolation between the first modulating node (105, 105a) and the at least one peripheral node; and - electrically connected to a first modulating voltage (Vm, Vm_a) source, which first modulating voltage source is independent of the peripheral node voltage. - arranged on the front side of the semiconductor substrate; - at least partially surrounded by the first primary charge-collection node (104, 104a), which first primary charge-collection node is arranged to provide electrical isolation between the first modulating node (105, 105a) and the at least one peripheral node; and - electrically connected to a first modulating voltage (Vm, Vm_a) source, which first modulating voltage source is independent of the peripheral node voltage.