A semiconductor light-emitting device comprising: a base board having a mounting surface and a conductor pattern located on the mounting surface; a semiconductor light-emitting chip having a bottom surface, a top surface and an outside surface, and including chip electrodes adjacent the bottom surface, the chip electrodes being electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; an optical plate having a side surface, a bottom surface, a middle region, a peripheral region and an edge located between the side surface and the bottom surface, the peripheral region surrounding the middle region and including the edge of the optical plate, the optical plate being located over the top surface of the semiconductor light-emitting chip so that the middle region of the optical plate overlaps the top surface of the semiconductor light-emitting chip; a wavelength converting layer having a side surface and a thickness, the wavelength converting layer including at least one phosphor and disposed between the edge of the optical plate and the outside surface of the semiconductor light-emitting chip so that the side surface of the wavelength converting layer extends from the outside surface of the semiconductor light-emitting chip toward the edge of the optical plate, wherein a density of the at least one phosphor included in the wavelength converting layer that is disposed between the middle region of the optical plate and the top surface of the semiconductor light-emitting chip is higher than that of the phosphor included in the wavelength converting layer that is disposed between the peripheral region of the optical plate and the outside surface of the semiconductor light-emitting chip; a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chip and the wavelength converting layer; and a reflective material layer having an inclined side surface disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the optical plate and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board while also surrounding the solder bumps, wherein the inclined side surface contacts with the side surface of the wavelength converting layer and extends from the outside surface of the semiconductor light-emitting chip toward the edge of the optical plate; wherein the bottom surface of the peripheral region of the optical plate is formed as a rough surface, and the bottom surface of the middle region of the optical plate is formed as at least one of a rough surface and a plane surface, wherein a roughness on the bottom surface of the peripheral region is larger than a roughness of the middle region. a base board having a mounting surface and a conductor pattern located on the mounting surface; a semiconductor light-emitting chip having a bottom surface, a top surface and an outside surface, and including chip electrodes adjacent the bottom surface, the chip electrodes being electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; an optical plate having a side surface, a bottom surface, a middle region, a peripheral region and an edge located between the side surface and the bottom surface, the peripheral region surrounding the middle region and including the edge of the optical plate, the optical plate being located over the top surface of the semiconductor light-emitting chip so that the middle region of the optical plate overlaps the top surface of the semiconductor light-emitting chip; a wavelength converting layer having a side surface and a thickness, the wavelength converting layer including at least one phosphor and disposed between the edge of the optical plate and the outside surface of the semiconductor light-emitting chip so that the side surface of the wavelength converting layer extends from the outside surface of the semiconductor light-emitting chip toward the edge of the optical plate, wherein a density of the at least one phosphor included in the wavelength converting layer that is disposed between the middle region of the optical plate and the top surface of the semiconductor light-emitting chip is higher than that of the phosphor included in the wavelength converting layer that is disposed between the peripheral region of the optical plate and the outside surface of the semiconductor light-emitting chip; a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chip and the wavelength converting layer; and a reflective material layer having an inclined side surface disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the optical plate and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board while also surrounding the solder bumps, wherein the inclined side surface contacts with the side surface of the wavelength converting layer and extends from the outside surface of the semiconductor light-emitting chip toward the edge of the optical plate; wherein the bottom surface of the peripheral region of the optical plate is formed as a rough surface, and the bottom surface of the middle region of the optical plate is formed as at least one of a rough surface and a plane surface, wherein a roughness on the bottom surface of the peripheral region is larger than a roughness of the middle region.