A signal shaping circuit, comprising a turn-on signal shaping module and a turn-off signal shaping module, wherein the turn-on signal shaping module comprises a first PMOS transistor, a first NMOS transistor, a second NMOS transistor, first resistor, a second resistor, a first capacitor, and a first inverter; a gate of the first PMOS transistor is connected with a first input signal (Vput1), a drain of the first PMOS transistor is respectively connected with a first end of the first resistor, a first end of the first capacitor, and a gate of the second NMOS transistor, and a source of the first PMOS transistor is connected with a source of the first NMOS transistor; a gate of the first NMOS transistor is connected with a second input signal (Vput2), and a drain of the first NMOS transistor and a first end of the second resistor are both connected with a reference voltage; a drain of the second NMOS transistor is connected with a second end of the second resistor, and a source of the second NMOS transistor, a second end of the first resistor, and a second end of the first capacitor are all grounded; an input end of the first inverter is connected with the second end of the second resistor, a voltage end of the first inverter is connected with the reference voltage, a ground end of the first inverter is grounded, and an output end of the first inverter constitutes a first output end of the signal shaping circuit; the turn-off signal shaping module comprises a second PMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a third resistor, a fourth resistor, a second capacitor, and a second inverter; a gate of the second PMOS transistor is connected with the second input signal, a drain of the second PMOS transistor is respectively connected with a first end of the third resistor, a first end of the second capacitor, and a gate of the fourth NMOS transistor, and a source of the second PMOS transistor is connected with a source of the third NMOS transistor; a gate of the third NMOS transistor is connected with the first input signal, and a drain of the third NMOS transistor and a first end of the fourth resistor are both connected with the reference voltage; a drain of the fourth NMOS transistor is connected with a second end of the fourth resistor, and a source of the fourth NMOS transistor, a second end of the third resistor, and a second end of the second capacitor are all grounded; and an input end of the second inverter is connected with the second end of the fourth resistor, a voltage end of the second inverter is connected with the reference voltage, a ground end of the second inverter is grounded, and an output end of the second inverter constitutes a second output end of the signal shaping circuit. wherein the turn-on signal shaping module comprises a first PMOS transistor, a first NMOS transistor, a second NMOS transistor, first resistor, a second resistor, a first capacitor, and a first inverter; a gate of the first PMOS transistor is connected with a first input signal (Vput1), a drain of the first PMOS transistor is respectively connected with a first end of the first resistor, a first end of the first capacitor, and a gate of the second NMOS transistor, and a source of the first PMOS transistor is connected with a source of the first NMOS transistor; a gate of the first NMOS transistor is connected with a second input signal (Vput2), and a drain of the first NMOS transistor and a first end of the second resistor are both connected with a reference voltage; a drain of the second NMOS transistor is connected with a second end of the second resistor, and a source of the second NMOS transistor, a second end of the first resistor, and a second end of the first capacitor are all grounded; an input end of the first inverter is connected with the second end of the second resistor, a voltage end of the first inverter is connected with the reference voltage, a ground end of the first inverter is grounded, and an output end of the first inverter constitutes a first output end of the signal shaping circuit; the turn-off signal shaping module comprises a second PMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a third resistor, a fourth resistor, a second capacitor, and a second inverter; a gate of the second PMOS transistor is connected with the second input signal, a drain of the second PMOS transistor is respectively connected with a first end of the third resistor, a first end of the second capacitor, and a gate of the fourth NMOS transistor, and a source of the second PMOS transistor is connected with a source of the third NMOS transistor; a gate of the third NMOS transistor is connected with the first input signal, and a drain of the third NMOS transistor and a first end of the fourth resistor are both connected with the reference voltage; a drain of the fourth NMOS transistor is connected with a second end of the fourth resistor, and a source of the fourth NMOS transistor, a second end of the third resistor, and a second end of the second capacitor are all grounded; and an input end of the second inverter is connected with the second end of the fourth resistor, a voltage end of the second inverter is connected with the reference voltage, a ground end of the second inverter is grounded, and an output end of the second inverter constitutes a second output end of the signal shaping circuit.