A material layer stack (11; 21; 31) for use in a non-volatile memory device, the material layer stack being vertically delimited by a lower first end face and an upper second end face and comprising a first magnetic tunnel junction and a second magnetic tunnel junction, the first and second magnetic tunnel junction being electrically connected and each comprising a pair of magnetic electrodes (14a, 14c; 15a, 15c) and a tunnel barrier (14b; 15b) disposed between said pair of magnetic electrodes, a first top electrode being formed on the upper second end face of the material layer stack (11, 21) to provide electrical contact with a second magnetic electrode of the pair of magnetic electrodes corresponding to the second magnetic tunnel junction, the material layer stack further comprising an upper stack portion and a lower stack portion, the upper stack portion having a smaller lateral extent than the lower stack portion where the upper portion abuts on the lower portion, thereby forming a shoulder on a lateral face of the material layer stack, the first magnetic tunnel junction being arranged in the lower stack portion and at least the second magnetic electrode and the tunnel barrier of the second magnetic tunnel junction being arranged in the upper stack portion, wherein the material layer stack comprises a conductor in electrical contact with the lower first end face and adapted for flowing a current past a first magnetic electrode of the pair of magnetic electrodes corresponding to the first magnetic tunnel junction, contact terminals (16a, 16b) being disposed on both ends of said conductor, said first and said second magnetic tunnel junction (14, 15) are adapted for magnetic polarization switching assisted by spin-orbit torque and spin-torque transfer respectively and each have an associated reconfigurable magnetoresistance adapted for storing a bit, the shoulder comprises a partially opened intermediate surface of the material layer stack on which the upper stack portion abuts the lower stack portion, a second top electrode being formed on an exposed portion of the partially opened intermediate surface to provide electrical contact with a first magnetic electrode (15a; 22; 32) of the pair of magnetic electrodes corresponding to the second magnetic tunnel junction and a second magnetic electrode (14c; 22; 32) of the pair of magnetic electrodes corresponding to the first magnetic tunnel junction, and the second magnetic electrode of the first magnetic tunnel junction and the first magnetic electrode of the second magnetic tunnel junction are provided as a single layer magnetic electrode (22, 32) common to both magnetic tunnel junctions and a partially opened top surface of the single layer magnetic electrode is vertically delimiting the shoulder. the material layer stack further comprising an upper stack portion and a lower stack portion, the upper stack portion having a smaller lateral extent than the lower stack portion where the upper portion abuts on the lower portion, thereby forming a shoulder on a lateral face of the material layer stack, the first magnetic tunnel junction being arranged in the lower stack portion and at least the second magnetic electrode and the tunnel barrier of the second magnetic tunnel junction being arranged in the upper stack portion, wherein the material layer stack comprises a conductor in electrical contact with the lower first end face and adapted for flowing a current past a first magnetic electrode of the pair of magnetic electrodes corresponding to the first magnetic tunnel junction, contact terminals (16a, 16b) being disposed on both ends of said conductor, said first and said second magnetic tunnel junction (14, 15) are adapted for magnetic polarization switching assisted by spin-orbit torque and spin-torque transfer respectively and each have an associated reconfigurable magnetoresistance adapted for storing a bit, the shoulder comprises a partially opened intermediate surface of the material layer stack on which the upper stack portion abuts the lower stack portion, a second top electrode being formed on an exposed portion of the partially opened intermediate surface to provide electrical contact with a first magnetic electrode (15a; 22; 32) of the pair of magnetic electrodes corresponding to the second magnetic tunnel junction and a second magnetic electrode (14c; 22; 32) of the pair of magnetic electrodes corresponding to the first magnetic tunnel junction, and the second magnetic electrode of the first magnetic tunnel junction and the first magnetic electrode of the second magnetic tunnel junction are provided as a single layer magnetic electrode (22, 32) common to both magnetic tunnel junctions and a partially opened top surface of the single layer magnetic electrode is vertically delimiting the shoulder.