A semiconductor light emitting device (10; 40), comprising: a package (11; 41) constituted by integrally laminating a first insulating layer (21; 51) having a pair of positive and negative conductive wires (14a, 14b) formed on its upper face, an inner-layer wire below the first insulating layer (21; 51), and a second insulating layer (22; 52) below the inner-layer wire, the positive and negative conductive wires (14a, 14b) being electroplated with gold or silver on their surfaces; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes on the respective conductive wires (14a, 14b), there being an outer peripheral region around an outer periphery of the semiconductor light emitting element; and a convex-lens-shaped sealing member that covers the semiconductor light emitting element, the sealing member having an outer edge, wherein the positive and negative conductive wires (14a, 14b) extend on the upper face of the first insulating layer (21; 51) towards the outer edge of the sealing member from directly beneath the semiconductor light emitting element, and are connected to the inner-layer wire via another conductive wire disposed in the thickness direction of the package (11; 41), and the inner-layer wire is disposed outside the outer edge of the sealing member so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package (11; 41) from the upper face side of the first insulating layer (21; 51) such that the inner-layer wire is not disposed directly beneath a region in between the first and second insulating layers (21, 22; 51, 52) which corresponds to the outer peripheral region of the semiconductor light emitting element. a package (11; 41) constituted by integrally laminating a first insulating layer (21; 51) having a pair of positive and negative conductive wires (14a, 14b) formed on its upper face, an inner-layer wire below the first insulating layer (21; 51), and a second insulating layer (22; 52) below the inner-layer wire, the positive and negative conductive wires (14a, 14b) being electroplated with gold or silver on their surfaces; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes on the respective conductive wires (14a, 14b), there being an outer peripheral region around an outer periphery of the semiconductor light emitting element; and a convex-lens-shaped sealing member that covers the semiconductor light emitting element, the sealing member having an outer edge, wherein the positive and negative conductive wires (14a, 14b) extend on the upper face of the first insulating layer (21; 51) towards the outer edge of the sealing member from directly beneath the semiconductor light emitting element, and are connected to the inner-layer wire via another conductive wire disposed in the thickness direction of the package (11; 41), and the inner-layer wire is disposed outside the outer edge of the sealing member so as to be spaced apart from the outer periphery of the semiconductor light emitting element in a see-through view of the package (11; 41) from the upper face side of the first insulating layer (21; 51) such that the inner-layer wire is not disposed directly beneath a region in between the first and second insulating layers (21, 22; 51, 52) which corresponds to the outer peripheral region of the semiconductor light emitting element.