A method of fabricating an electronic device comprising: - providing a layer of a wide-bandgap semiconductor material (110; 2215) having a conductivity type; - implanting dopant species in selected regions (120, 130; 2210, 2230, 2235) of said layer of a wide-bandgap semiconductor material (110; 2215) to form implanted regions of said layer of a wide-bandgap semiconductor material, said implanted regions having an altered conductivity type with respect to the conductivity type of the layer of a wide-bandgap semiconductor material, and - annealing the implanted regions of the layer of a wide-bandgap semiconductor material, wherein said annealing comprises: - coating said implanted regions to be annealed with a heat absorbing material layer, the heat absorbing material layer having an initial thickness, the material of the heat absorbing material layer having an optical extinction coefficient k equal to 0.2 or greater and a reflectance less than 5%, and - exposing the heat absorbing material layer to a laser radiation having an energy density, to anneal the selected regions of the layer of a wide-bandgap semiconductor material, and wherein: - the energy density of the laser radiation is selected in dependence of a dose of dopants of said implanted regions; - the initial thickness of the heat absorbing material layer is selected based on the energy density of the laser radiation so as to be sufficient to prevent the laser radiation to reach a surface of the underlying implanted regions to be annealed, and - said exposing the heat absorbing material layer to a laser radiation lasts for an exposure time and, during said exposure time, the heat absorbing material layer is subjected to erosion, so that during the exposure time the erosion of the heat absorbing material layer progressively allows at least part of the laser radiation to reach the surface of the underlying implanted regions to be annealed. - providing a layer of a wide-bandgap semiconductor material (110; 2215) having a conductivity type; - implanting dopant species in selected regions (120, 130; 2210, 2230, 2235) of said layer of a wide-bandgap semiconductor material (110; 2215) to form implanted regions of said layer of a wide-bandgap semiconductor material, said implanted regions having an altered conductivity type with respect to the conductivity type of the layer of a wide-bandgap semiconductor material, and - annealing the implanted regions of the layer of a wide-bandgap semiconductor material, - coating said implanted regions to be annealed with a heat absorbing material layer, the heat absorbing material layer having an initial thickness, the material of the heat absorbing material layer having an optical extinction coefficient k equal to 0.2 or greater and a reflectance less than 5%, and - exposing the heat absorbing material layer to a laser radiation having an energy density, to anneal the selected regions of the layer of a wide-bandgap semiconductor material, - the energy density of the laser radiation is selected in dependence of a dose of dopants of said implanted regions; - the initial thickness of the heat absorbing material layer is selected based on the energy density of the laser radiation so as to be sufficient to prevent the laser radiation to reach a surface of the underlying implanted regions to be annealed, and - said exposing the heat absorbing material layer to a laser radiation lasts for an exposure time and, during said exposure time, the heat absorbing material layer is subjected to erosion, so that during the exposure time the erosion of the heat absorbing material layer progressively allows at least part of the laser radiation to reach the surface of the underlying implanted regions to be annealed.