A light emitting element comprising: a semiconductor stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first electrode formed on the first conductivity type semiconductor layer, and a second electrode formed on the second conductivity type semiconductor layer, the first electrode and the second electrode being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion, two third extending portions and two fourth extending portions, the first extending portion extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending on two sides of the first extending portion, the two fourth extending portions each extending on the outside of the third extending portions, the first extending portion, the second extending portions, the third extending portions and the fourth extending portions each having a part that extends parallel to each other, and being disposed alternately in direction perpendicular to the first extending portion, and the fourth extending portions being bent toward the first connecting portion at distal ends, characterized in that in a direction perpendicular to the first extending portion, distances between the second extending portions and the third extending portions adjacent to each other are shorter than distances between the first extending portion and the respective third extending portions, and in that the first electrode and the second electrode are arranged such that a planar dimension of a rectangular shape enclosing the outer edge of the first electrode or the second electrode is 60 to 90% with respect to the planar dimension of the semiconductor stack. a semiconductor stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first electrode formed on the first conductivity type semiconductor layer, and a second electrode formed on the second conductivity type semiconductor layer, the first electrode and the second electrode being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion, two third extending portions and two fourth extending portions, the first extending portion extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending on two sides of the first extending portion, the two fourth extending portions each extending on the outside of the third extending portions, the first extending portion, the second extending portions, the third extending portions and the fourth extending portions each having a part that extends parallel to each other, and being disposed alternately in direction perpendicular to the first extending portion, and the fourth extending portions being bent toward the first connecting portion at distal ends, characterized in that in a direction perpendicular to the first extending portion, distances between the second extending portions and the third extending portions adjacent to each other are shorter than distances between the first extending portion and the respective third extending portions, and in that the first electrode and the second electrode are arranged such that a planar dimension of a rectangular shape enclosing the outer edge of the first electrode or the second electrode is 60 to 90% with respect to the planar dimension of the semiconductor stack.