A method of electroplating photoresist defined features comprising: a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures; b) providing a copper electroplating bath comprising one or more reaction products of one or more imidazole compounds having a formula: wherein R 1, R 2 and R 3 are independently chosen from a hydrogen, linear or branched (C 1 -C 10)alkyl, hydroxyl, linear or branched alkoxy, linear or branched hydroxy(C 1 -C 10)alkyl, linear or branched alkoxy(C 1 -C 10)alkyl, linear or branched, carboxy(C 1 -C 10)alkyl, linear or branched amino(C 1 -C 10)alkyl, and substituted or unsubstituted phenyl; and one or more bisepoxides having a formula: wherein R 4 and R 5 are independently chosen from hydrogen and (C 1 -C 4)alkyl; R 6 and R 7 are independently chosen from hydrogen, methyl and hydroxyl; m = 1-6 and n = 1-20; an electrolyte; one or more accelerators; and one or more suppressors; c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average %TIR of 5% to 8%, wherein %TIR is determined by the following equation: % TIR = height center − height edge / height max x 100 where height center is the height of a feature as measured along its center axis, height edge is the height of the feature as measured along its edge at the highest point on the edge and Height max is the height from the bottom of the feature to its highest point on its top. a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures; b) providing a copper electroplating bath comprising one or more reaction products of one or more imidazole compounds having a formula: wherein R 1, R 2 and R 3 are independently chosen from a hydrogen, linear or branched (C 1 -C 10)alkyl, hydroxyl, linear or branched alkoxy, linear or branched hydroxy(C 1 -C 10)alkyl, linear or branched alkoxy(C 1 -C 10)alkyl, linear or branched, carboxy(C 1 -C 10)alkyl, linear or branched amino(C 1 -C 10)alkyl, and substituted or unsubstituted phenyl; and one or more bisepoxides having a formula: wherein R 4 and R 5 are independently chosen from hydrogen and (C 1 -C 4)alkyl; R 6 and R 7 are independently chosen from hydrogen, methyl and hydroxyl; m = 1-6 and n = 1-20; an electrolyte; one or more accelerators; and one or more suppressors; wherein R 1, R 2 and R 3 are independently chosen from a hydrogen, linear or branched (C 1 -C 10)alkyl, hydroxyl, linear or branched alkoxy, linear or branched hydroxy(C 1 -C 10)alkyl, linear or branched alkoxy(C 1 -C 10)alkyl, linear or branched, carboxy(C 1 -C 10)alkyl, linear or branched amino(C 1 -C 10)alkyl, and substituted or unsubstituted phenyl; and one or more bisepoxides having a formula: wherein R 4 and R 5 are independently chosen from hydrogen and (C 1 -C 4)alkyl; R 6 and R 7 are independently chosen from hydrogen, methyl and hydroxyl; m = 1-6 and n = 1-20; an electrolyte; one or more accelerators; and one or more suppressors; c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average %TIR of 5% to 8%, wherein %TIR is determined by the following equation: % TIR = height center − height edge / height max x 100 where height center is the height of a feature as measured along its center axis, height edge is the height of the feature as measured along its edge at the highest point on the edge and Height max is the height from the bottom of the feature to its highest point on its top.