A method for contactless measurement of the conductivity of semiconductors, said method being implemented by: - a first assembly comprising a signal (X, Y) transmission/reception system able to transmit/receive a multi-frequency signal (X, Y) over a frequency range (Δf), the multi-frequency signal transmitted being in the form: x t = ∑ i = 1 N / 2 a i cos 2 πi NT e t + φ i with i representing the index of the ith frequency, Te the sample transmission period, a i the amplitude of N/2 frequencies and φ i their respective phases, - a second assembly comprising at least one semiconducting target and a single inductor element, the semiconducting target being positioned in proximity to the inductor element, - a transmission line, said transmission line being adapted to transmit the signal (X, Y) between the first assembly and the second assembly, and - a third assembly, said third assembly being intended to be connected to the first assembly, the third assembly comprising an analysis system, the third assembly being able to analyse a signal transmitted by the first assembly and a reflected or transmitted signal received by the first assembly, and the third assembly being able to deduce a reflection or transmission coefficient (ρ, R) of the transmitted signal therefrom, said method comprising at least the following steps: a) the first assembly transmits a multi-frequency signal, b) the second assembly reflects or transmits at least one part of the multi-frequency signal transmitted by the first assembly, c) the first assembly receives the multi-frequency signal reflected or transmitted by the second assembly, d) the third assembly calculates the reflection or transmission coefficient (ρ, R) of the signal transmitted for the frequency range (Δf) from the ratio of the signal transmitted by the first assembly to the signal reflected or transmitted by the second assembly, e) the third assembly determines conductivity of the semiconducting target using the impedance variation over the frequency range (Δf) of the second assembly obtained from said ratio. - a first assembly comprising a signal (X, Y) transmission/reception system able to transmit/receive a multi-frequency signal (X, Y) over a frequency range (Δf), the multi-frequency signal transmitted being in the form: x t = ∑ i = 1 N / 2 a i cos 2 πi NT e t + φ i with i representing the index of the ith frequency, Te the sample transmission period, a i the amplitude of N/2 frequencies and φ i their respective phases, - a second assembly comprising at least one semiconducting target and a single inductor element, the semiconducting target being positioned in proximity to the inductor element, - a transmission line, said transmission line being adapted to transmit the signal (X, Y) between the first assembly and the second assembly, and - a third assembly, said third assembly being intended to be connected to the first assembly, the third assembly comprising an analysis system, the third assembly being able to analyse a signal transmitted by the first assembly and a reflected or transmitted signal received by the first assembly, and the third assembly being able to deduce a reflection or transmission coefficient (ρ, R) of the transmitted signal therefrom, a) the first assembly transmits a multi-frequency signal, b) the second assembly reflects or transmits at least one part of the multi-frequency signal transmitted by the first assembly, c) the first assembly receives the multi-frequency signal reflected or transmitted by the second assembly, d) the third assembly calculates the reflection or transmission coefficient (ρ, R) of the signal transmitted for the frequency range (Δf) from the ratio of the signal transmitted by the first assembly to the signal reflected or transmitted by the second assembly, e) the third assembly determines conductivity of the semiconducting target using the impedance variation over the frequency range (Δf) of the second assembly obtained from said ratio.