A packaged power electronic device, comprising: a bearing structure (15; 215; 415) including a base section (16; 216; 416) and a transverse section (17; 217; 417), the base section having a first and a second face (16A, 16B) and the transverse section extending transversely to the base section; a die coupled to the first face of the base section of the bearing structure, the die having a first and a second main face (2A, 2B) and a height between the first and the second main faces; a first, a second and a third terminal (11, 12, 13), the first terminal extending on the first main face of the die and the second and third terminals (12, 13) extending on the second main face of the die; a package (5; 105) of insulating material, embedding the semiconductor die, the second terminal, the third terminal and at least partially the carrying base (16; 216; 416), the package having a first and a second main surface (5A, 5B; 105A, 105B); a first, a second and a third outer connection region (36, 31, 33; 17; 217; 417) electrically coupled to the first, the second and the third terminals respectively, the first, the second and the third outer connection regions being laterally surrounded by the package and facing the second main surface of the package, wherein the transverse section (17; 217; 417) of the bearing structure (15; 215; 415) extends from the base section (16; 216; 416) towards the second main surface of the package, has a first height greater than a height of the die, characterized in that the transverse section forms the first outer connection region and is flush with the second main surface (5B; 105B) of the package (5; 105) and wherein the transverse section (17; 217; 417) of the bearing structure (15; 215; 415) is flush with the first main surface (5A; 105A) of the package (5; 105) or is coupled to a front thermal dissipation region of thermally conductive material bonded to the second face of the base section (16; 216; 416) of the bearing structure (15; 215; 415), and extends monolithically between the first and the second main surfaces (5A; 105A, 5B; 105B) of the package (5, 105), without interruptions. a bearing structure (15; 215; 415) including a base section (16; 216; 416) and a transverse section (17; 217; 417), the base section having a first and a second face (16A, 16B) and the transverse section extending transversely to the base section; a die coupled to the first face of the base section of the bearing structure, the die having a first and a second main face (2A, 2B) and a height between the first and the second main faces; a first, a second and a third terminal (11, 12, 13), the first terminal extending on the first main face of the die and the second and third terminals (12, 13) extending on the second main face of the die; a package (5; 105) of insulating material, embedding the semiconductor die, the second terminal, the third terminal and at least partially the carrying base (16; 216; 416), the package having a first and a second main surface (5A, 5B; 105A, 105B); a first, a second and a third outer connection region (36, 31, 33; 17; 217; 417) electrically coupled to the first, the second and the third terminals respectively, the first, the second and the third outer connection regions being laterally surrounded by the package and facing the second main surface of the package, wherein the transverse section (17; 217; 417) of the bearing structure (15; 215; 415) extends from the base section (16; 216; 416) towards the second main surface of the package, has a first height greater than a height of the die, characterized in that the transverse section forms the first outer connection region and is flush with the second main surface (5B; 105B) of the package (5; 105) and wherein the transverse section (17; 217; 417) of the bearing structure (15; 215; 415) is flush with the first main surface (5A; 105A) of the package (5; 105) or is coupled to a front thermal dissipation region of thermally conductive material bonded to the second face of the base section (16; 216; 416) of the bearing structure (15; 215; 415), and extends monolithically between the first and the second main surfaces (5A; 105A, 5B; 105B) of the package (5, 105), without interruptions.