An integrated circuit, comprising: a substrate (102, 202, 302, 402, 502, 602) comprising a semiconductor material; an interconnect region (106, 206, 306, 406, 506, 606) disposed above the substrate (102, 202, 302, 402, 502, 602), comprising: a dielectric layer stack (122, 222, 322, 422, 522, 622); contacts (116, 216, 316, 416, 516, 616) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622); interconnects (118, 218, 318, 418, 518, 618) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622), wherein a plurality of the interconnects (118, 218, 318, 418, 518, 618) are disposed in a top interconnect level (124, 224, 324, 424, 524, 624) located in the interconnect region (106, 206, 306, 406, 506, 606), proximate to a top surface of the interconnect region (106, 206, 306, 406, 506, 606), opposite from a boundary between the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606); and vias (120, 220, 320, 420, 520, 620) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622); a heat-generating component (108, 208, 308, 408, 508, 608) disposed in the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606), proximate to the boundary between the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606); and a thermal routing structure (132, 232, 332, 432, 532, 632) disposed above the top interconnect level (124, 224, 324, 424, 524, 624) and extending over the heat-generating component (108, 208, 308, 408, 508, 608), the thermal routing structure (132, 232, 332, 432, 532, 632) including a cohered nanoparticle film comprising nanoparticles, in which adjacent nanoparticles cohere to each other, wherein the cohered nanoparticle film is substantially free of an organic binder material, and wherein a thermal conductivity of the thermal routing structure (132, 232, 332, 432, 532, 632) is higher than a thermal conductivity of dielectric material contacting the thermal routing structure (132, 232, 332, 432, 532, 632). a substrate (102, 202, 302, 402, 502, 602) comprising a semiconductor material; an interconnect region (106, 206, 306, 406, 506, 606) disposed above the substrate (102, 202, 302, 402, 502, 602), comprising: a dielectric layer stack (122, 222, 322, 422, 522, 622); contacts (116, 216, 316, 416, 516, 616) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622); interconnects (118, 218, 318, 418, 518, 618) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622), wherein a plurality of the interconnects (118, 218, 318, 418, 518, 618) are disposed in a top interconnect level (124, 224, 324, 424, 524, 624) located in the interconnect region (106, 206, 306, 406, 506, 606), proximate to a top surface of the interconnect region (106, 206, 306, 406, 506, 606), opposite from a boundary between the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606); and vias (120, 220, 320, 420, 520, 620) disposed in the dielectric layer stack (122, 222, 322, 422, 522, 622); a heat-generating component (108, 208, 308, 408, 508, 608) disposed in the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606), proximate to the boundary between the substrate (102, 202, 302, 402, 502, 602) and the interconnect region (106, 206, 306, 406, 506, 606); and a thermal routing structure (132, 232, 332, 432, 532, 632) disposed above the top interconnect level (124, 224, 324, 424, 524, 624) and extending over the heat-generating component (108, 208, 308, 408, 508, 608), the thermal routing structure (132, 232, 332, 432, 532, 632) including a cohered nanoparticle film comprising nanoparticles, in which adjacent nanoparticles cohere to each other, wherein the cohered nanoparticle film is substantially free of an organic binder material, and wherein a thermal conductivity of the thermal routing structure (132, 232, 332, 432, 532, 632) is higher than a thermal conductivity of dielectric material contacting the thermal routing structure (132, 232, 332, 432, 532, 632).