A method for manufacturing a device having a three-dimensional magnetic structure, the method comprising the steps of: applying or introducing magnetic particles onto or into a carrier element, wherein a plurality of at least partly interconnected cavities are formed between the magnetic particles, and wherein the magnetic particles contact one another at points of contact; connecting the magnetic particles at the points of contact by coating the arrangement of magnetic particles and the carrier element, wherein the cavities are penetrated at least partly by the layer generated when coating so that the result is the three-dimensional magnetic structure, said coating of the arrangement of magnetic particles and carrier element being performed by means of atomic layer deposition; and providing a conductor loop arrangement on the carrier element or a further carrier element so that: - when a current flows through the conductor loop arrangement, an inductance of the conductor loop arrangement is changed by the three-dimensional magnetic structure; or - when a current flows through the conductor loop arrangement, a force acts on the three-dimensional magnetic structure or the conductor loop arrangement by a magnetic field caused by the current flow; or - when a position of the three-dimensional magnetic structure is changed once or periodically, a current flow is induced through the conductor loop arrangement. applying or introducing magnetic particles onto or into a carrier element, wherein a plurality of at least partly interconnected cavities are formed between the magnetic particles, and wherein the magnetic particles contact one another at points of contact; connecting the magnetic particles at the points of contact by coating the arrangement of magnetic particles and the carrier element, wherein the cavities are penetrated at least partly by the layer generated when coating so that the result is the three-dimensional magnetic structure, said coating of the arrangement of magnetic particles and carrier element being performed by means of atomic layer deposition; and providing a conductor loop arrangement on the carrier element or a further carrier element so that: - when a current flows through the conductor loop arrangement, an inductance of the conductor loop arrangement is changed by the three-dimensional magnetic structure; or - when a current flows through the conductor loop arrangement, a force acts on the three-dimensional magnetic structure or the conductor loop arrangement by a magnetic field caused by the current flow; or - when a position of the three-dimensional magnetic structure is changed once or periodically, a current flow is induced through the conductor loop arrangement. - when a current flows through the conductor loop arrangement, an inductance of the conductor loop arrangement is changed by the three-dimensional magnetic structure; or - when a current flows through the conductor loop arrangement, a force acts on the three-dimensional magnetic structure or the conductor loop arrangement by a magnetic field caused by the current flow; or - when a position of the three-dimensional magnetic structure is changed once or periodically, a current flow is induced through the conductor loop arrangement.