A pressure sensor comprising: a semiconductor substrate that includes a first cavity; a pressure vessel, the pressure vessel having a cross section that defines a void, the pressure vessel having at least one curved portion that is configured to structurally deform based on a pressure difference between a cavity pressure in the first cavity and a vessel pressure in the pressure vessel, at least a first portion of the pressure vessel suspended in the first cavity; and wherein the pressure vessel is made of a dielectric material; and characterised by the pressure sensor further comprising: a first transducer mechanically coupled to the first portion of the pressure vessel and coupled to the semiconductor substrate, the first transducer having an attribute that changes with structural deformation of the pressure vessel, wherein a surrounding rectangle is defined as a rectangle having a smallest area that surrounds the first cavity in a plane of a wafer from which the pressure sensor is fabricated, the surrounding rectangle having first parallel sides and second parallel sides that are perpendicular the first parallel sides, each first parallel side having a first length, each second parallel side having a second length that is less than or equal to the first length; wherein at least one of a first distance, a second distance, or a third distance is less than or equal to one-third of the second length, wherein the first distance is between a first point at which the pressure vessel couples to the semiconductor substrate and a second point at which the first transducer couples to the semiconductor substrate, the second distance is between the first point at which the pressure vessel couples to the semiconductor substrate and a third point at which the pressure vessel mechanically couples to the first transducer, the third distance is between the third point at which the pressure vessel mechanically couples to the first transducer and the second point at which the first transducer couples to the semiconductor substrate. a semiconductor substrate that includes a first cavity; a pressure vessel, the pressure vessel having a cross section that defines a void, the pressure vessel having at least one curved portion that is configured to structurally deform based on a pressure difference between a cavity pressure in the first cavity and a vessel pressure in the pressure vessel, at least a first portion of the pressure vessel suspended in the first cavity; and wherein the pressure vessel is made of a dielectric material; and characterised by the pressure sensor further comprising: a first transducer mechanically coupled to the first portion of the pressure vessel and coupled to the semiconductor substrate, the first transducer having an attribute that changes with structural deformation of the pressure vessel, wherein a surrounding rectangle is defined as a rectangle having a smallest area that surrounds the first cavity in a plane of a wafer from which the pressure sensor is fabricated, the surrounding rectangle having first parallel sides and second parallel sides that are perpendicular the first parallel sides, each first parallel side having a first length, each second parallel side having a second length that is less than or equal to the first length; wherein at least one of a first distance, a second distance, or a third distance is less than or equal to one-third of the second length, wherein the first distance is between a first point at which the pressure vessel couples to the semiconductor substrate and a second point at which the first transducer couples to the semiconductor substrate, the second distance is between the first point at which the pressure vessel couples to the semiconductor substrate and a third point at which the pressure vessel mechanically couples to the first transducer, the third distance is between the third point at which the pressure vessel mechanically couples to the first transducer and the second point at which the first transducer couples to the semiconductor substrate. a first transducer mechanically coupled to the first portion of the pressure vessel and coupled to the semiconductor substrate, the first transducer having an attribute that changes with structural deformation of the pressure vessel, wherein a surrounding rectangle is defined as a rectangle having a smallest area that surrounds the first cavity in a plane of a wafer from which the pressure sensor is fabricated, the surrounding rectangle having first parallel sides and second parallel sides that are perpendicular the first parallel sides, each first parallel side having a first length, each second parallel side having a second length that is less than or equal to the first length; wherein at least one of a first distance, a second distance, or a third distance is less than or equal to one-third of the second length, wherein the first distance is between a first point at which the pressure vessel couples to the semiconductor substrate and a second point at which the first transducer couples to the semiconductor substrate, the second distance is between the first point at which the pressure vessel couples to the semiconductor substrate and a third point at which the pressure vessel mechanically couples to the first transducer, the third distance is between the third point at which the pressure vessel mechanically couples to the first transducer and the second point at which the first transducer couples to the semiconductor substrate.