Method for manufacturing a photovoltaic cell, comprising the steps of: a) providing a structure (1, 2, 3) comprising: - a substrate made of a crystalline silicon-based semiconducting material and comprising a first surface and a second, opposite surface; - a first dielectric layer formed on the first surface of the substrate and comprising boron atoms, the first dielectric layer being based on a preferably hydrogenated silicon oxynitride SiO x N y respecting 0 < y < x and x < 0.50; - a second dielectric layer formed on the second surface of the substrate and comprising phosphorous or arsenic atoms; d) applying a thermal anneal to the structure (1, 2, 3) under an oxidizing atmosphere, said thermal anneal being suitable for: - forming a first semiconducting zone intended to be in contact with an electrode, the first semiconducting zone being formed by diffusion of the boron atoms into the substrate from the first dielectric layer to the first surface of the substrate, the first semiconducting zone and the first dielectric layer having an interface; - forming a second semiconducting zone intended to be in contact with an electrode, the second semiconducting zone being formed by diffusion of the phosphorous or arsenic atoms into the substrate from the second dielectric layer to the second surface of the substrate; - enriching the first dielectric layer with oxygen so that the silicon oxynitride SiO x N y respects 0.50 ≤ x ≤ 0.66 after step d), so as to passivate the interface; step d) taking place continuously so that the first and second semiconducting zones (100, 110) are formed concomitantly; f) forming an electrode in contact with the first semiconducting zone through the first dielectric layer and an electrode in contact with the second semiconducting zone through the second dielectric layer. a) providing a structure (1, 2, 3) comprising: - a substrate made of a crystalline silicon-based semiconducting material and comprising a first surface and a second, opposite surface; - a first dielectric layer formed on the first surface of the substrate and comprising boron atoms, the first dielectric layer being based on a preferably hydrogenated silicon oxynitride SiO x N y respecting 0 < y < x and x < 0.50; - a second dielectric layer formed on the second surface of the substrate and comprising phosphorous or arsenic atoms; - a substrate made of a crystalline silicon-based semiconducting material and comprising a first surface and a second, opposite surface; - a first dielectric layer formed on the first surface of the substrate and comprising boron atoms, the first dielectric layer being based on a preferably hydrogenated silicon oxynitride SiO x N y respecting 0 < y < x and x < 0.50; - a second dielectric layer formed on the second surface of the substrate and comprising phosphorous or arsenic atoms; d) applying a thermal anneal to the structure (1, 2, 3) under an oxidizing atmosphere, said thermal anneal being suitable for: - forming a first semiconducting zone intended to be in contact with an electrode, the first semiconducting zone being formed by diffusion of the boron atoms into the substrate from the first dielectric layer to the first surface of the substrate, the first semiconducting zone and the first dielectric layer having an interface; - forming a second semiconducting zone intended to be in contact with an electrode, the second semiconducting zone being formed by diffusion of the phosphorous or arsenic atoms into the substrate from the second dielectric layer to the second surface of the substrate; - enriching the first dielectric layer with oxygen so that the silicon oxynitride SiO x N y respects 0.50 ≤ x ≤ 0.66 after step d), so as to passivate the interface; step d) taking place continuously so that the first and second semiconducting zones (100, 110) are formed concomitantly; - forming a first semiconducting zone intended to be in contact with an electrode, the first semiconducting zone being formed by diffusion of the boron atoms into the substrate from the first dielectric layer to the first surface of the substrate, the first semiconducting zone and the first dielectric layer having an interface; - forming a second semiconducting zone intended to be in contact with an electrode, the second semiconducting zone being formed by diffusion of the phosphorous or arsenic atoms into the substrate from the second dielectric layer to the second surface of the substrate; - enriching the first dielectric layer with oxygen so that the silicon oxynitride SiO x N y respects 0.50 ≤ x ≤ 0.66 after step d), so as to passivate the interface; step d) taking place continuously so that the first and second semiconducting zones (100, 110) are formed concomitantly; f) forming an electrode in contact with the first semiconducting zone through the first dielectric layer and an electrode in contact with the second semiconducting zone through the second dielectric layer.