A thin-film optoelectronic module device, comprising a first busbar contacting a first border zone; a second busbar contacting a second border zone; an internal zone disposed between the first border zone and the second border zone; a back-contact layer including a plurality of back-contact grooves that are spaced apart in a first direction; a front-contact layer including a plurality of front-contact grooves that are spaced apart in the first direction; a plurality of interconnects, each interconnect positioned in the first direction between one of the plurality of back-contact grooves and one of the front-contact grooves; and an array of at least three optoelectronic cells (104, 106, 108) interconnected in a series that extends in the first direction from the first busbar to the second busbar, each optoelectronic cell connected to another optoelectronic cell in the series by one of the plurality of interconnects, and each optoelectronic cell comprising: a portion of the back-contact layer (124, 126, 128) separated from other portions of the back-contact layer by at least one of the back-contact grooves; a portion of the front-contact layer (152, 154, 156, 158) separated from other portions of the front-contact layer by at least one of the front-contact grooves; and an absorber layer disposed between the portion of the back-contact layer (124, 126, 128) and the portion of the front-contact layer (152, 154, 156, 158); each interconnect of the plurality of interconnects has, when viewed along a viewing axis substantially orthogonal to an optoelectronic surface of said thin-film optoelectronic module device, a shape of a periodic wave; a largest peak-to-peak amplitude of at least one interconnect of the plurality of interconnects is at least eight times greater than a shortest distance between the back-contact groove and the front-contact groove that the at least one interconnect is positioned between; the first border zone, the second border zone and the internal zone each include one or more of the interconnects; the one or more of the interconnects of the internal zone are substantially parallel to the one or more interconnects of each of the first and second border zones; a largest amplitude of at least one wave component of at least one of the one or more interconnects in each of the first or second border zones is lesser than a smallest amplitude of at least one wave component of at least one of the one or more interconnects in the internal zone; characterised in that the front-contact layer of each of the first and second border zones has a lower sheet resistance than a sheet resistance of the front-contact layer of the internal zone by deposition of a thicker front-contact layer in the first and second border zones than in the internal zone. a portion of the back-contact layer (124, 126, 128) separated from other portions of the back-contact layer by at least one of the back-contact grooves; a portion of the front-contact layer (152, 154, 156, 158) separated from other portions of the front-contact layer by at least one of the front-contact grooves; and an absorber layer disposed between the portion of the back-contact layer (124, 126, 128) and the portion of the front-contact layer (152, 154, 156, 158);