A computer-implemented method for calculating equivalent mechanical parameters of a film layer etching region, the method comprising: selecting at least a portion of the film layer etching region as an analysis region; establishing a planar model corresponding to the analysis region; performing grid division on the planar model at a first density; analyzing, by means of a finite element method, first simulated stresses of the planar model under simulated boundary conditions according to actual mechanical parameters of a film layer material and the grid division at the first density; performing grid division on the planar model at a second density, wherein the second density is different from the first density; analyzing, by means of the finite element method, second simulated stresses of the planar model under the simulated boundary conditions according to the actual mechanical parameters of the film layer material and grid division at the second density; comparing whether a difference ratio between each second simulated stress and a corresponding first simulated stress exceeds a threshold value; if yes, returning to the step of performing grid division on the planar model at a first density and reselecting a larger first density; if no, proceeding to a next step; and calculating equivalent mechanical parameters of the analysis region according to the first simulated stresses, to obtain the equivalent mechanical parameters of the etching region, wherein under the simulated boundary conditions, the equivalent mechanical parameters enable an anisotropic planar blind plate having a same size as that of a boundary of the planar model to reach the first simulated stresses; wherein the anisotropic planar blind plate is a complete two-dimensional plate with different mechanical properties in all directions, no thickness, and no opening. selecting at least a portion of the film layer etching region as an analysis region; establishing a planar model corresponding to the analysis region; performing grid division on the planar model at a first density; analyzing, by means of a finite element method, first simulated stresses of the planar model under simulated boundary conditions according to actual mechanical parameters of a film layer material and the grid division at the first density; performing grid division on the planar model at a second density, wherein the second density is different from the first density; analyzing, by means of the finite element method, second simulated stresses of the planar model under the simulated boundary conditions according to the actual mechanical parameters of the film layer material and grid division at the second density; comparing whether a difference ratio between each second simulated stress and a corresponding first simulated stress exceeds a threshold value; if yes, returning to the step of performing grid division on the planar model at a first density and reselecting a larger first density; if no, proceeding to a next step; and calculating equivalent mechanical parameters of the analysis region according to the first simulated stresses, to obtain the equivalent mechanical parameters of the etching region, wherein under the simulated boundary conditions, the equivalent mechanical parameters enable an anisotropic planar blind plate having a same size as that of a boundary of the planar model to reach the first simulated stresses; wherein the anisotropic planar blind plate is a complete two-dimensional plate with different mechanical properties in all directions, no thickness, and no opening.