A metal-dielectric bonding method, comprising: providing a first semiconductor structure including: a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, the first metal layer having a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface such that the metal bonding surface is flat after the metal bonding surface is planarized; applying a plasma treatment on the metal bonding surface; providing a second semiconductor structure including: a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, the second dielectric layer having a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; applying a plasma treatment on the dielectric bonding surface; and bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface of the first semiconductor structure with the dielectric bonding surface of the second semiconductor layer, wherein a bonding interface is formed between the first semiconductor structure and the second semiconductor structure, wherein the dielectric bonding surface and the metal bonding surface face each other and are bonded together, wherein the bonding interface is at a plane at which the metal bonding surface is in contact with the dielectric bonding surface, wherein the first semiconductor layer includes a power device that generates heat, characterised in that the first metal layer is formed to dissipate the heat generated by the power device, and wherein the first metal layer is configured to dissipate heat by further connecting to a heat dissipating apparatus. providing a first semiconductor structure including: a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, the first metal layer having a metal bonding surface facing away from the first semiconductor layer; a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, the first metal layer having a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface such that the metal bonding surface is flat after the metal bonding surface is planarized; applying a plasma treatment on the metal bonding surface; providing a second semiconductor structure including: a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, the second dielectric layer having a dielectric bonding surface facing away from the second semiconductor layer; a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, the second dielectric layer having a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; applying a plasma treatment on the dielectric bonding surface; and bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface of the first semiconductor structure with the dielectric bonding surface of the second semiconductor layer, wherein a bonding interface is formed between the first semiconductor structure and the second semiconductor structure, wherein the dielectric bonding surface and the metal bonding surface face each other and are bonded together, wherein the bonding interface is at a plane at which the metal bonding surface is in contact with the dielectric bonding surface, wherein the first semiconductor layer includes a power device that generates heat, characterised in that the first metal layer is formed to dissipate the heat generated by the power device, and wherein the first metal layer is configured to dissipate heat by further connecting to a heat dissipating apparatus.