Method for fabricating at least one passivated planar photodiode, comprising the following steps: i) producing a semiconductor segment called the detection semiconductor segment, having first and second faces (10a, 10b) that are opposite each other and parallel to a main plane of the photodiode, and comprising: ∘ flush with the first face, a region called the intermediate region, ∘ flush with the second face, a region called the lower region, which is doped with a second conductivity type, ii) depositing a passivation layer that is made of a dielectric so that it covers the first face, and forming, in the passivation layer, at least one through-aperture that opens onto the first face and that at least partially encircles, in the main plane, a central portion of the detection semiconductor segment; iii) producing a lateral segment that is made of a semiconductor doped with the second conductivity type and that is intended to be electrically biased, this lateral segment being located in contact with the lower region; characterized in that it furthermore comprises the following steps: iv) producing at least one peripheral segment that is made of a semiconductor containing dopants of the second conductivity type, and that rests on and in contact with the first face through the through-aperture; v) carrying out an anneal, this ensuring a diffusion of the dopants from the peripheral segment to the detection semiconductor segment, thus forming, in the detection semiconductor segment, a peripheral region doped with the second conductivity type, which is flush with the first face, encircles the central portion in the main plane and is intended to be located between, and at a nonzero distance from, a region called the upper region and the lateral segment; vi) producing, in the central portion of the detection semiconductor segment, the upper region, the latter being doped with a first conductivity type opposite the second type, being intended to be electrically biased, being flush with the first face and separated from the lower region by the intermediate region, and being encircled in the main plane by the peripheral region. i) producing a semiconductor segment called the detection semiconductor segment, having first and second faces (10a, 10b) that are opposite each other and parallel to a main plane of the photodiode, and comprising: ∘ flush with the first face, a region called the intermediate region, ∘ flush with the second face, a region called the lower region, which is doped with a second conductivity type, ∘ flush with the first face, a region called the intermediate region, ∘ flush with the second face, a region called the lower region, which is doped with a second conductivity type, ii) depositing a passivation layer that is made of a dielectric so that it covers the first face, and forming, in the passivation layer, at least one through-aperture that opens onto the first face and that at least partially encircles, in the main plane, a central portion of the detection semiconductor segment; iii) producing a lateral segment that is made of a semiconductor doped with the second conductivity type and that is intended to be electrically biased, this lateral segment being located in contact with the lower region; iv) producing at least one peripheral segment that is made of a semiconductor containing dopants of the second conductivity type, and that rests on and in contact with the first face through the through-aperture; v) carrying out an anneal, this ensuring a diffusion of the dopants from the peripheral segment to the detection semiconductor segment, thus forming, in the detection semiconductor segment, a peripheral region doped with the second conductivity type, which is flush with the first face, encircles the central portion in the main plane and is intended to be located between, and at a nonzero distance from, a region called the upper region and the lateral segment; vi) producing, in the central portion of the detection semiconductor segment, the upper region, the latter being doped with a first conductivity type opposite the second type, being intended to be electrically biased, being flush with the first face and separated from the lower region by the intermediate region, and being encircled in the main plane by the peripheral region.