A method for producing a plurality of semiconductor bodies comprising the following steps: a) providing a carrier having a multiplicity of component regions separated from one another by separating lines; b) depositing a semiconductor layer sequence having an active region provided for generating radiation; c) forming a plurality of ridge-shaped regions from the semiconductor layer sequence in such a way that exactly two ridge-shaped regions are formed alongside one another between two adjacent separating lines in a direction running perpendicular to the separating lines, wherein the separating lines run along regions of the carrier, in which a dislocation density is increased in comparison to regions extending between the separating lines and at least a first ridge-shaped region or a second ridge-shaped region of the ridge-shaped regions is arranged closer to a central line running between the adjacent separating lines than to the separating line situated closest to said ridge-shaped region, where the dislocation density increases proceeding from the central line in the direction of the separating lines und wherein a contact layer is formed on the semiconductor layer sequence in such a way that a contact area (41, 42) provided for external electrical contact-connection is assigned to the ridge-shaped regions in each case on the side facing away from the central line; and d) singulating the semiconductor layer sequence along the separating lines and along the central line into a plurality of semiconductor bodies each having at least one ridge-shaped region; characterized in that in step c) a marking 420 is formed by means of the contact area, on the basis of which the semiconductor body with the first ridge-shaped region and the semiconductor body with the second ridge-shaped region can be distinguished from one another optically. a) providing a carrier having a multiplicity of component regions separated from one another by separating lines; b) depositing a semiconductor layer sequence having an active region provided for generating radiation; c) forming a plurality of ridge-shaped regions from the semiconductor layer sequence in such a way that exactly two ridge-shaped regions are formed alongside one another between two adjacent separating lines in a direction running perpendicular to the separating lines, wherein the separating lines run along regions of the carrier, in which a dislocation density is increased in comparison to regions extending between the separating lines and at least a first ridge-shaped region or a second ridge-shaped region of the ridge-shaped regions is arranged closer to a central line running between the adjacent separating lines than to the separating line situated closest to said ridge-shaped region, where the dislocation density increases proceeding from the central line in the direction of the separating lines und wherein a contact layer is formed on the semiconductor layer sequence in such a way that a contact area (41, 42) provided for external electrical contact-connection is assigned to the ridge-shaped regions in each case on the side facing away from the central line; and d) singulating the semiconductor layer sequence along the separating lines and along the central line into a plurality of semiconductor bodies each having at least one ridge-shaped region;