A glass substrate with a transparent conductive film, consisting of: a glass substrate, a transparent conductive film whose principal component is tin oxide and an undercoating film formed between the glass substrate and the transparent conductive film, the undercoating film being a single layer that includes silica as a principle component or multiple layers that consist of a first undercoating layer including tin oxide as a principal component and formed on the glass substrate side and a second undercoating layer including silica as a principal component and formed on the transparent conductive film side; wherein the glass substrate with a transparent conductive film is obtained by a method that comprises: depositing the transparent conductive film on a glass ribbon in a float process using a raw material gas that includes 0.5 to 2.0 mol% of an organic tin compound, at least 10 mol% of an oxidation raw material, and a fluorine raw material, the temperature of the glass ribbon being 560°C to 750°C during the deposition of the transparent conductive film, the film deposition speed of the transparent conductive film being 3000 to 7000 nm/min; and cutting the glass ribbon to obtain the glass substrate with a transparent conductive film; wherein the transparent conductive film includes a component reducing the sheet resistance of the transparent conductive film, and the component consists of fluorine derived from the fluorine raw material, and the concentration of fluorine in the transparent conductive film is 0.03 to 0.1 wt%; wherein the transparent conductive film has a thickness of 400 to 1000 nm; wherein a ratio of the number of carbon atoms to the number of tin atoms in the transparent conductive film is smaller than 4x10 -3; and wherein an absorption coefficient at 400 to 550 nm wavelength of the transparent conductive film is not greater than 0.40x10 3 cm -1. a glass substrate, a transparent conductive film whose principal component is tin oxide and an undercoating film formed between the glass substrate and the transparent conductive film, the undercoating film being a single layer that includes silica as a principle component or multiple layers that consist of a first undercoating layer including tin oxide as a principal component and formed on the glass substrate side and a second undercoating layer including silica as a principal component and formed on the transparent conductive film side; wherein the glass substrate with a transparent conductive film is obtained by a method that comprises: depositing the transparent conductive film on a glass ribbon in a float process using a raw material gas that includes 0.5 to 2.0 mol% of an organic tin compound, at least 10 mol% of an oxidation raw material, and a fluorine raw material, the temperature of the glass ribbon being 560°C to 750°C during the deposition of the transparent conductive film, the film deposition speed of the transparent conductive film being 3000 to 7000 nm/min; and cutting the glass ribbon to obtain the glass substrate with a transparent conductive film; wherein the transparent conductive film includes a component reducing the sheet resistance of the transparent conductive film, and the component consists of fluorine derived from the fluorine raw material, and the concentration of fluorine in the transparent conductive film is 0.03 to 0.1 wt%; wherein the transparent conductive film has a thickness of 400 to 1000 nm; wherein a ratio of the number of carbon atoms to the number of tin atoms in the transparent conductive film is smaller than 4x10 -3; and wherein an absorption coefficient at 400 to 550 nm wavelength of the transparent conductive film is not greater than 0.40x10 3 cm -1. depositing the transparent conductive film on a glass ribbon in a float process using a raw material gas that includes 0.5 to 2.0 mol% of an organic tin compound, at least 10 mol% of an oxidation raw material, and a fluorine raw material, the temperature of the glass ribbon being 560°C to 750°C during the deposition of the transparent conductive film, the film deposition speed of the transparent conductive film being 3000 to 7000 nm/min; and cutting the glass ribbon to obtain the glass substrate with a transparent conductive film; wherein the transparent conductive film includes a component reducing the sheet resistance of the transparent conductive film, and the component consists of fluorine derived from the fluorine raw material, and the concentration of fluorine in the transparent conductive film is 0.03 to 0.1 wt%; wherein the transparent conductive film has a thickness of 400 to 1000 nm; wherein a ratio of the number of carbon atoms to the number of tin atoms in the transparent conductive film is smaller than 4x10 -3; and wherein an absorption coefficient at 400 to 550 nm wavelength of the transparent conductive film is not greater than 0.40x10 3 cm -1.