A semiconductor light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective structure comprising a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index under the light emitting structure; a first electrode layer formed on the first conductive semiconductor layer; a ohmic layer under the reflective structure; and a conductive support member having a metal material under the ohmic layer, wherein the ohmic layer includes a plurality of protrusions and the plurality of protrusions are protruded in direction toward a lower surface of the second conductive semiconductor layer, wherein the ohmic layer makes electric contact with the reflective structure and the light emitting structure, wherein the first conductive semiconductor layer includes an upper surface, wherein the upper surface of the first conductive semiconductor layer includes a first region formed in a roughness and a second region formed in a flat surface under the first electrode layer, wherein the first conductive semiconductor layer includes an AlGaN based semiconductor layer and the second conductive semiconductor layer includes an AlGaN based semiconductor layer, wherein an outer region of the conductive support member is located at an outer region than the light emitting structure, wherein the lower surface of the second conductive semiconductor layer is contacted with the plurality of protrusions and the reflective structure, wherein the first conductive semiconductor layer is formed of an n-type layer and the second conductive semiconductor layer is formed of a p-type layer, wherein the reflective structure is contacted between the ohmic layer having the plurality of protrusions and the p-type layer, and wherein the ohmic layer is formed between and in contact with the reflective structure and the supportive support member, wherein the ohmic layer is formed on the surface of the reflective structure so that an outer side of the ohmic layer is not exposed to the sidewalls of the light emitting structure and wherein an upper portion of the conductive support member covers the outer side of the ohmic layer to prevent exposing the outer side of the ohmic layer. a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective structure comprising a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index under the light emitting structure; a first electrode layer formed on the first conductive semiconductor layer; a ohmic layer under the reflective structure; and a conductive support member having a metal material under the ohmic layer, wherein the ohmic layer includes a plurality of protrusions and the plurality of protrusions are protruded in direction toward a lower surface of the second conductive semiconductor layer, wherein the ohmic layer makes electric contact with the reflective structure and the light emitting structure, wherein the first conductive semiconductor layer includes an upper surface, wherein the upper surface of the first conductive semiconductor layer includes a first region formed in a roughness and a second region formed in a flat surface under the first electrode layer, wherein the first conductive semiconductor layer includes an AlGaN based semiconductor layer and the second conductive semiconductor layer includes an AlGaN based semiconductor layer, wherein an outer region of the conductive support member is located at an outer region than the light emitting structure, wherein the lower surface of the second conductive semiconductor layer is contacted with the plurality of protrusions and the reflective structure, wherein the first conductive semiconductor layer is formed of an n-type layer and the second conductive semiconductor layer is formed of a p-type layer, wherein the reflective structure is contacted between the ohmic layer having the plurality of protrusions and the p-type layer, and wherein the ohmic layer is formed between and in contact with the reflective structure and the supportive support member, wherein the ohmic layer is formed on the surface of the reflective structure so that an outer side of the ohmic layer is not exposed to the sidewalls of the light emitting structure and wherein an upper portion of the conductive support member covers the outer side of the ohmic layer to prevent exposing the outer side of the ohmic layer.