A range imaging device comprising: a semiconductor substrate; and a pixel circuit formed at a surface of the semiconductor substrate, the pixel circuit including at least: a photoelectric conversion device configured to generate charge carriers based on light incident from a space targeted for measurement; charge storages (CS1, CS2, CS3, CS4) each configured to store at least some of the generated charge carriers; at least one transfer MOS transistor provided on a transfer path, the at least one transfer MOS transistor being configured to transfer at least some of the generated charge carriers from the photoelectric conversion device to a corresponding one of the charge storages through the transfer path; and at least one charge drainage MOS transistor provided on a drainage path, the at least one charge drainage MOS transistor being configured to drain the generated charge carriers from the photoelectric conversion device through the drainage path, wherein: the photoelectric conversion device has a rectangular shape in plan view on the surface of the photoelectric conversion device; characterised in that the at least one transfer MOS transistor comprises 2M transfer MOS transistors, and the at least one charge drainage MOS transistor comprises 2N charge drainage MOS transistors, M being an integer greater than or equal to 2, N being an integer greater than or equal to 1; M transfer MOS transistors of the 2M transfer MOS transistors are arranged on each of long sides of the photoelectric conversion device symmetrically with respect to an x-axis that is parallel to the long sides and passes through a center of the photoelectric conversion device, the M transfer MOS transistors on one of the long sides facing the M transfer MOS transistors on the other of the long sides; and the 2N charge drainage MOS transistors are provided on respective short sides of the photoelectric conversion device. a semiconductor substrate; and a pixel circuit formed at a surface of the semiconductor substrate, the pixel circuit including at least: a photoelectric conversion device configured to generate charge carriers based on light incident from a space targeted for measurement; charge storages (CS1, CS2, CS3, CS4) each configured to store at least some of the generated charge carriers; at least one transfer MOS transistor provided on a transfer path, the at least one transfer MOS transistor being configured to transfer at least some of the generated charge carriers from the photoelectric conversion device to a corresponding one of the charge storages through the transfer path; and at least one charge drainage MOS transistor provided on a drainage path, the at least one charge drainage MOS transistor being configured to drain the generated charge carriers from the photoelectric conversion device through the drainage path, a photoelectric conversion device configured to generate charge carriers based on light incident from a space targeted for measurement; charge storages (CS1, CS2, CS3, CS4) each configured to store at least some of the generated charge carriers; at least one transfer MOS transistor provided on a transfer path, the at least one transfer MOS transistor being configured to transfer at least some of the generated charge carriers from the photoelectric conversion device to a corresponding one of the charge storages through the transfer path; and at least one charge drainage MOS transistor provided on a drainage path, the at least one charge drainage MOS transistor being configured to drain the generated charge carriers from the photoelectric conversion device through the drainage path, wherein: the photoelectric conversion device has a rectangular shape in plan view on the surface of the photoelectric conversion device; characterised in that the at least one transfer MOS transistor comprises 2M transfer MOS transistors, and the at least one charge drainage MOS transistor comprises 2N charge drainage MOS transistors, M being an integer greater than or equal to 2, N being an integer greater than or equal to 1; M transfer MOS transistors of the 2M transfer MOS transistors are arranged on each of long sides of the photoelectric conversion device symmetrically with respect to an x-axis that is parallel to the long sides and passes through a center of the photoelectric conversion device, the M transfer MOS transistors on one of the long sides facing the M transfer MOS transistors on the other of the long sides; and the 2N charge drainage MOS transistors are provided on respective short sides of the photoelectric conversion device. the photoelectric conversion device has a rectangular shape in plan view on the surface of the photoelectric conversion device; characterised in that the at least one transfer MOS transistor comprises 2M transfer MOS transistors, and the at least one charge drainage MOS transistor comprises 2N charge drainage MOS transistors, M being an integer greater than or equal to 2, N being an integer greater than or equal to 1; M transfer MOS transistors of the 2M transfer MOS transistors are arranged on each of long sides of the photoelectric conversion device symmetrically with respect to an x-axis that is parallel to the long sides and passes through a center of the photoelectric conversion device, the M transfer MOS transistors on one of the long sides facing the M transfer MOS transistors on the other of the long sides; and the 2N charge drainage MOS transistors are provided on respective short sides of the photoelectric conversion device.