A light emitting diode array comprising: a first mesa (103, 803) comprising a top surface (103t, 803t), at least a first LED including a first p-type layer (122, 822), a first n-type layer (126, 826) and a first color active region and a first tunnel junction (120, 820) on the first LED, the top surface (103t, 803t) of the first mesa (103, 803) comprising a second n-type layer (116, 816) on the first tunnel junction (120, 820); an adjacent mesa (105, 805) comprising a top surface (105t, 805t), the first LED, a second LED including the second n-type layer (116, 816), a second p-type layer (112, 812), and a second color active region (114, 814); a second tunnel junction (110, 810) on the second LED of the adjacent mesa (105, 805), and a third n-type layer (106, 806) on the second tunnel junction (110, 810) of the adjacent mesa (105, 805); a first trench separating the first mesa (103, 803) and the adjacent mesa (105, 805); anode metallization contacts on the second n-type layer (116, 816) of the first mesa (103, 803) and on the top surface (105t, 805t) of the adjacent mesa (105, 805); a third color active region on the third n-type layer (106, 806) of the adjacent mesa (105, 805) and the top surface (105t, 805t) of the adjacent mesa (105,805) including a third p-type layer; a third mesa (107, 807) comprising the first LED, second LED, the second tunnel junction (110, 810), and the third n-type layer (106, 806) on the second tunnel junction (110, 810); a second trench separating the adjacent mesa (105, 805) and the third mesa (107, 807); a cathode metallization (134, 834) in the first trench and in electrical contact with the first color active region (124, 824) of the first mesa (103, 803); a cathode metallization (134, 834) in the second trench and in electrical contact with the first color active region (124, 824) and the second color active region (114, 814) of the third mesa (107, 807) and the cathode metallization (134, 834) in the first trench in electrical contact with the first color active region (124, 824), the second color active region (114, 814) and the third color active region (104, 804) of the adjacent mesa (105,805); and an anode metallization contact on the third n-type layer (106, 806) of the third mesa (107, 807) characterized in that the second n-type layer (116, 816) comprises at least one n-type III-nitride layer (116a, 116b) with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. a first mesa (103, 803) comprising a top surface (103t, 803t), at least a first LED including a first p-type layer (122, 822), a first n-type layer (126, 826) and a first color active region and a first tunnel junction (120, 820) on the first LED, the top surface (103t, 803t) of the first mesa (103, 803) comprising a second n-type layer (116, 816) on the first tunnel junction (120, 820); an adjacent mesa (105, 805) comprising a top surface (105t, 805t), the first LED, a second LED including the second n-type layer (116, 816), a second p-type layer (112, 812), and a second color active region (114, 814); a second tunnel junction (110, 810) on the second LED of the adjacent mesa (105, 805), and a third n-type layer (106, 806) on the second tunnel junction (110, 810) of the adjacent mesa (105, 805); a first trench separating the first mesa (103, 803) and the adjacent mesa (105, 805); anode metallization contacts on the second n-type layer (116, 816) of the first mesa (103, 803) and on the top surface (105t, 805t) of the adjacent mesa (105, 805); a third color active region on the third n-type layer (106, 806) of the adjacent mesa (105, 805) and the top surface (105t, 805t) of the adjacent mesa (105,805) including a third p-type layer; a third mesa (107, 807) comprising the first LED, second LED, the second tunnel junction (110, 810), and the third n-type layer (106, 806) on the second tunnel junction (110, 810); a second trench separating the adjacent mesa (105, 805) and the third mesa (107, 807); a cathode metallization (134, 834) in the first trench and in electrical contact with the first color active region (124, 824) of the first mesa (103, 803); a cathode metallization (134, 834) in the second trench and in electrical contact with the first color active region (124, 824) and the second color active region (114, 814) of the third mesa (107, 807) and the cathode metallization (134, 834) in the first trench in electrical contact with the first color active region (124, 824), the second color active region (114, 814) and the third color active region (104, 804) of the adjacent mesa (105,805); and an anode metallization contact on the third n-type layer (106, 806) of the third mesa (107, 807)