A coated cutting tool comprising a substrate and a hard coating film formed on the substrate, wherein the hard coating film has: a layer (b) which is disposed on the substrate, is composed of a nitride or a carbonitride containing at least 55 atom% to at most 75 atom% aluminum (Al) with respect to a total amount of metal elements including metalloid elements and has a thickness in a range of 0.1 μm or more and 5.0 μm or less; and a layer (c) disposed on the layer (b) and which is a layered coating film made by alternately layering a nitride or carbonitride layer configured to contain, with respect to a total amount of metal elements including metalloid elements, at least 55 atom% to at most 75 atom% aluminum (Al), at least 20 atom% to at most 40 atom% chromium (Cr) having a second highest content percentage, and at least 1 atom% to at most 5 atom% silicon (Si), and a nitride or carbonitride layer including, with respect to the total amount of metal elements including metalloid elements, at least 55 atom% to at most 75 atom% aluminum (Al), and at least 20 atom% to at most 40 atom% titanium (Ti) having a second highest content percentage, each layer having a thickness of 50 nm or less; and a TiSiN-based layer (d) disposed on the layer (c), the layer (d) containing at least 70 atom% to at most 95 atom% of Ti and at least 5 atom% to at most 30 atom% of Si, having a thickness in a range of 0.1 μm or more and 5.0 μm or less and having higher hardness than the layer (c), and wherein, in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope, the layer (c) satisfies a relationship of Ih×100/Is 15, wherein Ih is a peak intensity ascribable to a plane of AlN having a hexagonal closest packed structure, and Is is the sum of a peak intensity ascribable to a plane of AlN, a plane of TiN, a plane of CrN, a plane of AlN, a plane of TiN, a plane of CrN, a plane of AlN, a plane of TiN, and a plane of CrN, each of which has face-centered cubic structure, and a peak intensity ascribable to a plane of AlN, a plane of AlN, and a plane of AlN, each of which has hexagonal closest packed structure. a layer (b) which is disposed on the substrate, is composed of a nitride or a carbonitride containing at least 55 atom% to at most 75 atom% aluminum (Al) with respect to a total amount of metal elements including metalloid elements and has a thickness in a range of 0.1 μm or more and 5.0 μm or less; and a layer (c) disposed on the layer (b) and which is a layered coating film made by alternately layering a nitride or carbonitride layer configured to contain, with respect to a total amount of metal elements including metalloid elements, at least 55 atom% to at most 75 atom% aluminum (Al), at least 20 atom% to at most 40 atom% chromium (Cr) having a second highest content percentage, and at least 1 atom% to at most 5 atom% silicon (Si), and a nitride or carbonitride layer including, with respect to the total amount of metal elements including metalloid elements, at least 55 atom% to at most 75 atom% aluminum (Al), and at least 20 atom% to at most 40 atom% titanium (Ti) having a second highest content percentage, each layer having a thickness of 50 nm or less; and a TiSiN-based layer (d) disposed on the layer (c), the layer (d) containing at least 70 atom% to at most 95 atom% of Ti and at least 5 atom% to at most 30 atom% of Si, having a thickness in a range of 0.1 μm or more and 5.0 μm or less and having higher hardness than the layer (c), and wherein, in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope, the layer (c) satisfies a relationship of Ih×100/Is 15, wherein Ih is a peak intensity ascribable to a plane of AlN having a hexagonal closest packed structure, and Is is the sum of a peak intensity ascribable to a plane of AlN, a plane of TiN, a plane of CrN, a plane of AlN, a plane of TiN, a plane of CrN, a plane of AlN, a plane of TiN, and a plane of CrN, each of which has face-centered cubic structure, and a peak intensity ascribable to a plane of AlN, a plane of AlN, and a plane of AlN, each of which has hexagonal closest packed structure.