A solid-state image sensor (100, 500A, 500B, 500c, 500D, 500E, 7011) comprising: a two-dimensional pixel array where pixels each including a photoelectric conversion device are arranged in an array; a smoothing layer of a dielectric material (503A, 503B, 503C) disposed above the pixel array, the smoothing layer comprising regions having different refractive indices for each of a plurality of pixel regions of the two-dimensional pixel array; and a plurality of types of metal thin film filters (202, 203, 502A, 502B, 502C) that are mounted on the smoothing layer and arranged facing a pixel region of the two-dimensional pixel array, the smoothing layer configured to protect the metal thin film filters, the metal thin film filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, each of the metal thin film filters (202, 203, 502A, 502B, 502C) forming a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of metal thin film filter (502A, 502B, 502C) is arranged for a plurality of adjacent photoelectric conversion device groups (506A, 506B, 506C), the plurality of types of metal thin film filters (502A, 502B, 502C) are arranged for adjacent unit groups to form a filter bank, and the filter banks are arranged in a unit of N×M, where N and M are integers of one or more, facing the pixel region of the two-dimensional pixel array, wherein the image sensor formed from the two-dimensional pixel array includes a mechanism for shifting by a minute distance on a plane horizontal to a plane where pixels are two-dimensionally located, and a timing of shifting the image sensor is in accordance with a reference time that is synchronous with a sensor read timing such as a read frame time for pixel output. a two-dimensional pixel array where pixels each including a photoelectric conversion device are arranged in an array; a smoothing layer of a dielectric material (503A, 503B, 503C) disposed above the pixel array, the smoothing layer comprising regions having different refractive indices for each of a plurality of pixel regions of the two-dimensional pixel array; and a plurality of types of metal thin film filters (202, 203, 502A, 502B, 502C) that are mounted on the smoothing layer and arranged facing a pixel region of the two-dimensional pixel array, the smoothing layer configured to protect the metal thin film filters, the metal thin film filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, each of the metal thin film filters (202, 203, 502A, 502B, 502C) forming a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of metal thin film filter (502A, 502B, 502C) is arranged for a plurality of adjacent photoelectric conversion device groups (506A, 506B, 506C), the plurality of types of metal thin film filters (502A, 502B, 502C) are arranged for adjacent unit groups to form a filter bank, and the filter banks are arranged in a unit of N×M, where N and M are integers of one or more, facing the pixel region of the two-dimensional pixel array, wherein the image sensor formed from the two-dimensional pixel array includes a mechanism for shifting by a minute distance on a plane horizontal to a plane where pixels are two-dimensionally located, and a timing of shifting the image sensor is in accordance with a reference time that is synchronous with a sensor read timing such as a read frame time for pixel output.