Laser light source, comprising - a semiconductor layer sequence having an active layer having at least two active regions which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence along an emission direction, said side area being embodied as a radiation coupling-out area, - a respective electrical contact area above each of the at least two active regions on a main surface of the semiconductor layer sequence, and - a surface structure in the main surface of the semiconductor layer sequence, wherein - the at least two active regions are arranged in a manner spaced apart from one another in the active layer transversely with respect to the emission direction, - each of the electrical contact areas has a first partial region and a second partial region having a width that increases along the emission direction toward the radiation coupling-out area, - the surface structure has, between the at least two electrical contact areas, at least one first depression along the emission direction and also second depressions, - the first partial regions of the electrical contact areas are in each case arranged between at least two second depressions, - in the semiconductor layer sequence the main surface has ridge-type structures, on which the first partial region and second partial region (31, 32) of the electrical contact areas are arranged, respectively, and - each of the ridge-type structures has a first depth in the first partial region, which is greater than a second depth of the ridge-type structure in the second partial region. - a semiconductor layer sequence having an active layer having at least two active regions which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence along an emission direction, said side area being embodied as a radiation coupling-out area, - a respective electrical contact area above each of the at least two active regions on a main surface of the semiconductor layer sequence, and - a surface structure in the main surface of the semiconductor layer sequence, wherein - the at least two active regions are arranged in a manner spaced apart from one another in the active layer transversely with respect to the emission direction, - each of the electrical contact areas has a first partial region and a second partial region having a width that increases along the emission direction toward the radiation coupling-out area, - the surface structure has, between the at least two electrical contact areas, at least one first depression along the emission direction and also second depressions, - the first partial regions of the electrical contact areas are in each case arranged between at least two second depressions, - in the semiconductor layer sequence the main surface has ridge-type structures, on which the first partial region and second partial region (31, 32) of the electrical contact areas are arranged, respectively, and - each of the ridge-type structures has a first depth in the first partial region, which is greater than a second depth of the ridge-type structure in the second partial region.