A bidirectional power switch comprising first (100 1), second (100 2), and third (100 3) components, each comprising: a stack of first, second, and third semiconductor regions of alternated conductivity types, the first, the second and the third regions being respectively an upper region, an intermediate region and a lower region of the stack, the intermediate region extending from the upper surface of the lower region to the lower surface of the upper region; and a semiconductor control region having a conductivity type opposite to that of the first region, arranged in the first region and having a surface and a depth lower, respectively, than the surface and the depth of the first region, wherein: the first regions of the first (100 1) and second (100 2) components have the same conductivity type and the first regions of the first (100 1) and third (100 3) components have opposite conductivity types; the first region of the first component (100 1) is connected to the control regions of the second (100 2) and third (100 3) components; the first regions of the second (100 2) and third (100 3) components are connected to a first conduction terminal of the switch; the third regions of the first (100 1), second (100 2), and third (100 3) components are connected to a second conduction terminal of the switch; and the control region of the first component (100 1) is connected to a control terminal of the switch. a stack of first, second, and third semiconductor regions of alternated conductivity types, the first, the second and the third regions being respectively an upper region, an intermediate region and a lower region of the stack, the intermediate region extending from the upper surface of the lower region to the lower surface of the upper region; and a semiconductor control region having a conductivity type opposite to that of the first region, arranged in the first region and having a surface and a depth lower, respectively, than the surface and the depth of the first region, wherein: the first regions of the first (100 1) and second (100 2) components have the same conductivity type and the first regions of the first (100 1) and third (100 3) components have opposite conductivity types; the first region of the first component (100 1) is connected to the control regions of the second (100 2) and third (100 3) components; the first regions of the second (100 2) and third (100 3) components are connected to a first conduction terminal of the switch; the third regions of the first (100 1), second (100 2), and third (100 3) components are connected to a second conduction terminal of the switch; and the control region of the first component (100 1) is connected to a control terminal of the switch. the first regions of the first (100 1) and second (100 2) components have the same conductivity type and the first regions of the first (100 1) and third (100 3) components have opposite conductivity types; the first region of the first component (100 1) is connected to the control regions of the second (100 2) and third (100 3) components; the first regions of the second (100 2) and third (100 3) components are connected to a first conduction terminal of the switch; the third regions of the first (100 1), second (100 2), and third (100 3) components are connected to a second conduction terminal of the switch; and the control region of the first component (100 1) is connected to a control terminal of the switch.