An IGBT device, comprising: a whole-wafer IGBT chip, wherein a top surface of the whole-wafer IGBT chip comprises a central gate connection zone and a plurality of emitter connection zones surrounding the central gate connection zone, the emitter connection zones being formed on a plurality of cellular zones, one of the cellular zones being a failure cellular zone having a large leakage current between the collector and emitter; and a bottom surface of the whole-wafer IGBT chip comprises a collector zone, wherein the emitter connection zone located on the top surface of the failure cellular zone of the chip is thinned to make the height of the emitter connection zone on the surface of the failure cellular zone lower than that of a common plane where other emitter connection zones are located so that the failure cellular zone is disconnected from an emitter gasket formed on the top surface of the chip; a collector gasket fixed on the bottom surface of the chip, wherein the radius of the collector gasket is less than the radius of the chip, the collector gasket covers the collector zone, the radius of the emitter gasket is less than the radius of the chip, and wherein the emitter gasket covers the emitter connection zones but does not cover a terminal zone surrounding the active region of the chip; a collector electrode in electrical contact with the collector gasket and an emitter electrode in electrical contact with the emitter gasket; a gate leading wire connected to the central gate connection zone, wherein the gate leading wire is insulated from the emitter gasket and the emitter electrode; and a locating collar, configured to fix and limit the collector gasket and the emitter gasket, fix the collector gasket on the bottom surface of the chip and fix the emitter gasket on the top surface of the chip, wherein the locating collar comprises: an outer ring having an upper opening and a lower opening, wherein the diameter of the lower opening of the outer ring is the same as the diameter of the collector gasket, the lower opening of the outer ring fixes the collector gasket, and the upper opening of the outer ring comprises a first circular groove and a second circular groove, wherein the diameter of the first circular groove is equal to the diameter of the chip, the chip is fixed in the first groove, and the diameter of the second circular groove is greater than the diameter of the chip; and an inner ring, wherein the outside diameter of the inner ring is equal to the diameter of the second groove, the inner ring is fixed in the second groove, the inside diameter of the inner ring is equal to the diameter of the emitter gasket, and the emitter gasket is fixed in the inner ring. a whole-wafer IGBT chip, wherein a top surface of the whole-wafer IGBT chip comprises a central gate connection zone and a plurality of emitter connection zones surrounding the central gate connection zone, the emitter connection zones being formed on a plurality of cellular zones, one of the cellular zones being a failure cellular zone having a large leakage current between the collector and emitter; and a bottom surface of the whole-wafer IGBT chip comprises a collector zone, wherein the emitter connection zone located on the top surface of the failure cellular zone of the chip is thinned to make the height of the emitter connection zone on the surface of the failure cellular zone lower than that of a common plane where other emitter connection zones are located so that the failure cellular zone is disconnected from an emitter gasket formed on the top surface of the chip; a collector gasket fixed on the bottom surface of the chip, wherein the radius of the collector gasket is less than the radius of the chip, the collector gasket covers the collector zone, the radius of the emitter gasket is less than the radius of the chip, and wherein the emitter gasket covers the emitter connection zones but does not cover a terminal zone surrounding the active region of the chip; a collector electrode in electrical contact with the collector gasket and an emitter electrode in electrical contact with the emitter gasket; a gate leading wire connected to the central gate connection zone, wherein the gate leading wire is insulated from the emitter gasket and the emitter electrode; and a locating collar, configured to fix and limit the collector gasket and the emitter gasket, fix the collector gasket on the bottom surface of the chip and fix the emitter gasket on the top surface of the chip, wherein the locating collar comprises: an outer ring having an upper opening and a lower opening, wherein the diameter of the lower opening of the outer ring is the same as the diameter of the collector gasket, the lower opening of the outer ring fixes the collector gasket, and the upper opening of the outer ring comprises a first circular groove and a second circular groove, wherein the diameter of the first circular groove is equal to the diameter of the chip, the chip is fixed in the first groove, and the diameter of the second circular groove is greater than the diameter of the chip; and an inner ring, wherein the outside diameter of the inner ring is equal to the diameter of the second groove, the inner ring is fixed in the second groove, the inside diameter of the inner ring is equal to the diameter of the emitter gasket, and the emitter gasket is fixed in the inner ring.