A semiconductor structure for a radiation detector, having: - a substrate made from a semiconductor material of a first conductivity type, - a semiconductor substrate, wherein the semiconductor substrate - has a semiconductor layer arranged on the substrate, which is more highly resistive compared to the substrate, - is of the first conductivity type, and - is electrically doped with a doping concentration, - doping regions, wherein the doping regions - are buried in the semiconductor substrate and formed to be insulated from one another, - are of a second conductivity type, which is opposite to the first conductivity type, and - are electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, - at least one further doping region, wherein the at least one further doping region - is buried in the semiconductor substrate and assigned to one or more of the doping regions in such a manner that, in a plan view onto the surface, in which the semiconductor substrate extends, a whole-surface overlap of the at least one further doping region and the assigned doping region is formed, - is of the first conductivity type, and - is electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, and - a top layer, which is arranged on the semiconductor substrate and is of the second conductivity type, wherein an avalanche region is formed in the semiconductor substrate between the doping regions (13, 15) arranged herein and the top layer arranged on the semiconductor substrate, that is to say a region of high field strength, in which, during operation, a multiplication of free charge carriers takes place owing to collisions, and wherein a quenching region is formed in the semiconductor substrate between the doping regions (13, 15) arranged herein and the substrate. - a substrate made from a semiconductor material of a first conductivity type, - a semiconductor substrate, wherein the semiconductor substrate - has a semiconductor layer arranged on the substrate, which is more highly resistive compared to the substrate, - is of the first conductivity type, and - is electrically doped with a doping concentration, - has a semiconductor layer arranged on the substrate, which is more highly resistive compared to the substrate, - is of the first conductivity type, and - is electrically doped with a doping concentration, - doping regions, wherein the doping regions - are buried in the semiconductor substrate and formed to be insulated from one another, - are of a second conductivity type, which is opposite to the first conductivity type, and - are electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, - are buried in the semiconductor substrate and formed to be insulated from one another, - are of a second conductivity type, which is opposite to the first conductivity type, and - are electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, - at least one further doping region, wherein the at least one further doping region - is buried in the semiconductor substrate and assigned to one or more of the doping regions in such a manner that, in a plan view onto the surface, in which the semiconductor substrate extends, a whole-surface overlap of the at least one further doping region and the assigned doping region is formed, - is of the first conductivity type, and - is electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, and - is buried in the semiconductor substrate and assigned to one or more of the doping regions in such a manner that, in a plan view onto the surface, in which the semiconductor substrate extends, a whole-surface overlap of the at least one further doping region and the assigned doping region is formed, - is of the first conductivity type, and - is electrically doped with a doping concentration which is greater than the doping concentration in the semiconductor substrate, and - a top layer, which is arranged on the semiconductor substrate and is of the second conductivity type,