mhurhangee/ep-ind-claims huggingface dataset:
A vortex generator configured for mounting to either of a suction side or a pressure side of a rotor blade, the vortex generator comprising; a base portion comprising a curvature in an uninstalled state that substantially aligns with or conforms to a contour of a plurality of locations on either of the suction side or the pressure side of the rotor blade; a protrusion member extending upwardly from the base portion, the protrusion member comprising a plurality of tines separated by at least one slit, the base portion and the protrusion member being constructed of a rigid material; characterized in that the vortex generator further comprises: a flexible coating material that completely surrounds the base portion and the protrusion member and that is configured at least partially within or around the at least one slit.
An electron beam system equipped with a spherical aberration corrector having first and second multipole elements (3, 7) and transfer lenses disposed between said first and second multipole elements (3,7), said electron beam system comprising: first deflection means for deflecting an electron beam such that a center orbit of the electron beam is tilted relative to the optical axis within the second multipole element; and controlmeans for controlling said first deflection means, the control means acting to supply a tilt control signal to said first deflection means as a control signal for correcting third-order aberration S 3 with two-fold symmetry, the tilt control signal indicating in what direction should the electron beam be tilted to what extent within the second multipole element, characterized in that the electron beam is deflected by a deflecting field created by said first deflection means disposedbetween the first and second multipole elements (3, 7) to cause the electron beam exiting from the first multipole element to impinge on the optical axis at an angle to the optical axis passing through the second multipole element, and in that the electron beam is deflected back to the optical axis by a deflecting field created by the second multipole element. first deflection means for deflecting an electron beam such that a center orbit of the electron beam is tilted relative to the optical axis within the second multipole element; and controlmeans for controlling said first deflection means, the control means acting to supply a tilt control signal to said first deflection means as a control signal for correcting third-order aberration S 3 with two-fold symmetry, the tilt control signal indicating in what direction should the electron beam be tilted to what extent within the second multipole element, characterized in that the electron beam is deflected by a deflecting field created by said first deflection means disposedbetween the first and second multipole elements (3, 7) to cause the electron beam exiting from the first multipole element to impinge on the optical axis at an angle to the optical axis passing through the second multipole element, and in that the electron beam is deflected back to the optical axis by a deflecting field created by the second multipole element.
A wrist-worn device for measuring body temperature, comprising a housing with means for securing it to the wrist of a patient, and having inside the housing at least a microcontroller and, signal-connected to it, a temperature transducer and a wireless communication module, wherein a passive infrared sensor is the temperature transducer, the housing contains a measurement window for the passive infrared sensor, the window is located on the housing's surface that is not intended for contact with the wrist and the housing contains an accelerometer signal-connected to the microcontroller, and wherein the accelerometer is configured to continuously record the trajectory of the device (1, characterized in that the microcontroller is configured to read the temperature only if this trajectory corresponds to the lifting of the device near the head of the patient.
A formulation for topical application comprising: an active compound, 10 to 60%w/w of a partition coefficient enhancer (PC enhancer), having a structure of the general formula: C n H 2n + 2 O 2 where n represents an integer from 3 to 6 inclusive, a diffusion coefficient enhancer (DC enhancer) selected from the group consisting of a C 12 to C 14 straight chain fatty acid and a C 14 straight chain primary alcohol, a first dimethicone macromer mixture including a dimethicone macromer and a hydrocarbyl methyl siloxane emollient selected from the group consisting of an alkyl methyl siloxane, an aryl methyl siloxane and an alkyl aryl methyl siloxane, and a second dimethicone macromer mixture including a methyl siloxane compound and a cross-linked dimethicone macromer; wherein the formulation comprises less than 10 vol.% water. an active compound, 10 to 60%w/w of a partition coefficient enhancer (PC enhancer), having a structure of the general formula: C n H 2n + 2 O 2 where n represents an integer from 3 to 6 inclusive, a diffusion coefficient enhancer (DC enhancer) selected from the group consisting of a C 12 to C 14 straight chain fatty acid and a C 14 straight chain primary alcohol, a first dimethicone macromer mixture including a dimethicone macromer and a hydrocarbyl methyl siloxane emollient selected from the group consisting of an alkyl methyl siloxane, an aryl methyl siloxane and an alkyl aryl methyl siloxane, and a second dimethicone macromer mixture including a methyl siloxane compound and a cross-linked dimethicone macromer; wherein the formulation comprises less than 10 vol.% water.
An integrated circuit, IC, comprising: a substrate; a transistor above the substrate and including a layer of single-crystal semiconductor material, wherein the transistor includes: a gate; a channel above the gate; and source and drain, S/D, regions adjacent to the channel, wherein the source region includes a first dopant concentration and wherein the drain region includes a second dopant concentration; and characterized by: a contact resistance reducing layer formed on and above at least one of the S/D regions, wherein the contact resistance reducing layer includes a third dopant concentration that is at least 1E20 atoms per cubic centimeter greater in concentration than each of the first and second dopant concentrations; and a first contact layer formed on and above the contact resistance reducing layer of the at least one of the S/D regions; and a metal contact for the at least one S/D region the metal contact below the at least one of the S/D regions; at least one metallization layer below the transistor and between the transistor and the substrate; and at least one metallization layer above the transistor. a substrate; a transistor above the substrate and including a layer of single-crystal semiconductor material, wherein the transistor includes: a gate; a channel above the gate; and source and drain, S/D, regions adjacent to the channel, wherein the source region includes a first dopant concentration and wherein the drain region includes a second dopant concentration; and characterized by: a contact resistance reducing layer formed on and above at least one of the S/D regions, wherein the contact resistance reducing layer includes a third dopant concentration that is at least 1E20 atoms per cubic centimeter greater in concentration than each of the first and second dopant concentrations; and a first contact layer formed on and above the contact resistance reducing layer of the at least one of the S/D regions; and a metal contact for the at least one S/D region the metal contact below the at least one of the S/D regions; a gate; a channel above the gate; and source and drain, S/D, regions adjacent to the channel, wherein the source region includes a first dopant concentration and wherein the drain region includes a second dopant concentration; and characterized by: a contact resistance reducing layer formed on and above at least one of the S/D regions, wherein the contact resistance reducing layer includes a third dopant concentration that is at least 1E20 atoms per cubic centimeter greater in concentration than each of the first and second dopant concentrations; and a first contact layer formed on and above the contact resistance reducing layer of the at least one of the S/D regions; and a metal contact for the at least one S/D region the metal contact below the at least one of the S/D regions; at least one metallization layer below the transistor and between the transistor and the substrate; and at least one metallization layer above the transistor.
An alkylene oxide derivative represented by formula, wherein a ratio Mz/Mw of a weight average molecular weight (Mw) and z average molecular weight (Mz) calculated from a chromatogram obtained by gel permeation chromatography measurement of said alkylene oxide derivative satisfies formula below. Z − O − PO a − PO b / EO c − H n (in the formula, Z represents a residual group of a compound having a number of carbons of 1 to 24 and 1 to 6 hydroxyl groups wherein all the hydroxyl groups are excluded, n represents a number of 1 to 6, PO represents oxypropylene group, EO represents oxyethylene group, a and b represent numbers of moles added of said oxypropylene group PO, respectively, c represents a number of moles added of said oxyethylene group EO, a represents a number of 1 to 100, b represents a number of 1 to 100, c represents a number of 1 to 200, a + b + c ≧ 10, and b / c = 1 / 5 ~ 5 / 1, b / c indicates that said oxypropylene group PO and said oxyethylene group EO are randomly added, and a random ratio x of said oxypropylene group PO and said oxyethylene group EO satisfies 0.1 ≦ x ≦ 1, wherein the random ratio x is calculated based on formula: x = b + c / a + b + c 5 ≦ M z / M w ≦ 50 Z represents a residual group of a compound having a number of carbons of 1 to 24 and 1 to 6 hydroxyl groups wherein all the hydroxyl groups are excluded, n represents a number of 1 to 6, PO represents oxypropylene group, EO represents oxyethylene group, a and b represent numbers of moles added of said oxypropylene group PO, respectively, c represents a number of moles added of said oxyethylene group EO, a represents a number of 1 to 100, b represents a number of 1 to 100, c represents a number of 1 to 200, a + b + c ≧ 10, and b / c = 1 / 5 ~ 5 / 1, b / c indicates that said oxypropylene group PO and said oxyethylene group EO are randomly added, and a random ratio x of said oxypropylene group PO and said oxyethylene group EO satisfies 0.1 ≦ x ≦ 1, wherein the random ratio x is calculated based on formula: x = b + c / a + b + c 5 ≦ M z / M w ≦ 50
A lead-free semiconductor ceramic that does not contain Pb, the semiconductor ceramic comprising: a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula A m BO 3, wherein part of Ba constituting an A site is replaced with Na, Bi, Ca, and a rare-earth element having an ionic radius smaller than that of the Na, the content of the rare-earth element, with the total number of moles of the elements constituting the A site being 1 mole, is 0.0005 to 0.015 on a molar ratio basis, and the content of the Ca, with the total number of moles of the elements constituting the A site being 1 mole, is 0.05 to 0.20 on a molar ratio basis. a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula A m BO 3, wherein part of Ba constituting an A site is replaced with Na, Bi, Ca, and a rare-earth element having an ionic radius smaller than that of the Na, the content of the rare-earth element, with the total number of moles of the elements constituting the A site being 1 mole, is 0.0005 to 0.015 on a molar ratio basis, and the content of the Ca, with the total number of moles of the elements constituting the A site being 1 mole, is 0.05 to 0.20 on a molar ratio basis.
A composition comprising an AAV vector comprising a transgene encoding a lysosomal hydrolase, for use in treating a lysosomal storage disease in a mammal, wherein the composition is to be administered to a first site in the CNS of the mammal and the concentration of the vector in the composition is at least 5 x 10 12 gp/ml such that the lysosomal hydrolase is expressed in a therapeutically effective amount in a second site in the CNS which contains neurons that project to the first site and which is distal to, and at least 2 mm from, said first site.
Method for the manufacture of an engine component, in particular a piston for an internal combustion engine, in which an aluminium alloy is cast by pressure die casting, wherein the aluminium alloy consists of the following alloying elements: silicon: 11 wt.% to 14.5 wt.%, nickel: 3.6 wt.% to 5 wt.%, optionally 3.8 wt.% to 4.5 wt.% copper: 3.7 wt.% to 5.2 wt.%, magnesium: 0.5 wt.% to 1.5 wt.%, iron: 0.6 wt.% to 1.5 wt.%, optionally 0.9 wt.% to 1.1 wt.% manganese: 0.2 wt.% to 0.4 wt.%, zirconium: 0.04 wt.% to 0.1 wt.%, vanadium: 0.04 wt.% to 0.1 wt.%, remainder: aluminium and unavoidable impurities. silicon: 11 wt.% to 14.5 wt.%, nickel: 3.6 wt.% to 5 wt.%, optionally 3.8 wt.% to 4.5 wt.% copper: 3.7 wt.% to 5.2 wt.%, magnesium: 0.5 wt.% to 1.5 wt.%, iron: 0.6 wt.% to 1.5 wt.%, optionally 0.9 wt.% to 1.1 wt.% manganese: 0.2 wt.% to 0.4 wt.%, zirconium: 0.04 wt.% to 0.1 wt.%, vanadium: 0.04 wt.% to 0.1 wt.%, remainder: aluminium and unavoidable impurities.
A polymer comprising a main chain comprising a polyphenylene structure, and including a repeating structural unit represented by Formula as a structure comprising a side chain having a sulfonic acid group and including a repeating structural unit represented by Formula as a structure comprising a side chain having a nitrogen-containing heterocyclic group: wherein Z is at least one structure selected from the group consisting of a direct bond, -O- and -S-; Y is at least one structure selected from the group consisting of -CO-, -SO 2 -, -SO-, -CONH-, -COO-, -(CF 2) l - (wherein l is an integer of 1 to 10) and -C(CF 3) 2 -; R 20 is a nitrogen-containing heterocyclic group; q is an integer of 1 to 5; and p is an integer of 0 to 4; wherein Y 1 is at least one structure selected from the group consisting of -CO-, -SO 2 -, -SO-, -CONH-, -COO-, -(CF 2) l - (wherein l is an integer of 1 to 10) and -C(CF 3) 2 -; Z 1 is at least one structure selected from the group consisting of a direct bond, -(CH 2) l - (wherein l is an integer of 1 to 10), -C(CH 3) 2 -, -O- and -S-; Ar is an aromatic group having a substituent represented by -SO 3 H, -O(CH 2) h SO 3 H or -O(CF 2) h SO 3 H (wherein h is an integer of 1 to 12); m is an integer of 0 to 10; n is an integer of 0 to 10; and k is an integer of 1 to 4.
Destacking device comprising a stacking magazine that is open on the bottom side and has holding means for a stack of metal sheets, and a pull-off device (5, 6) that is disposed beneath the stacking magazine and has a driven upward and downward movable suction element (5, 15), which, in the reversal position thereof from the upward movement to the downward movement, is positioned within the lower opening of the stacking magazine, for gripping the respective lowest metal sheet by way of negative pressure and pulling the gripped sheet from the stack, characterized in that the holding means comprise magnets, which are disposed on at least two opposing sides (A, B; C, D) of the stacking magazine.
A method for the production of medium- to long-chain hydrocarbons, in particular alkanes, from gaseous alkanes or alkane hydrates, wherein (a) in a first partial method, a gaseous alkane is converted into medium- to long-chain hydrocarbons (synthesis product) via a one-step or multi-step reaction with release of molecular hydrogen; and (b) in a parallel second partial method, the molecular hydrogen released in the first partial method is used to generate energy, wherein furthermore the energy released in the second partial method is used for activating and/or operating the reaction of the first partial method, and wherein furthermore in the second partial method the molecular hydrogen in a fuel cell is used to generate electrical power. (a) in a first partial method, a gaseous alkane is converted into medium- to long-chain hydrocarbons (synthesis product) via a one-step or multi-step reaction with release of molecular hydrogen; and (b) in a parallel second partial method, the molecular hydrogen released in the first partial method is used to generate energy,
An imaging system comprising: a camera having a field of view; a plurality of axially spaced mirrors (120 to 122) supported on a rotor and positioned at different distances from the camera along an axis of rotation of the rotor to rotate the mirrors around the axis of the rotor and into the field of view of the camera; a plurality of stationary mirrors (135 to 137) supported to redirect the fields of view from the plurality of axially spaced mirrors (120 to 122) to provide multiple fields of view at different angles; a housing supporting the camera, the rotor, and the plurality of stationary mirrors (135 to 137); a first window supported by the housing; and a second window supported by the housing; wherein the camera is disposed in the housing such that an optical axis of the camera is substantially orthogonal to the first window, and the axis of the rotor is angled approximately 45 degrees from the optical axis of the camera. a camera having a field of view; a plurality of axially spaced mirrors (120 to 122) supported on a rotor and positioned at different distances from the camera along an axis of rotation of the rotor to rotate the mirrors around the axis of the rotor and into the field of view of the camera; a plurality of stationary mirrors (135 to 137) supported to redirect the fields of view from the plurality of axially spaced mirrors (120 to 122) to provide multiple fields of view at different angles; a housing supporting the camera, the rotor, and the plurality of stationary mirrors (135 to 137); a first window supported by the housing; and a second window supported by the housing; wherein the camera is disposed in the housing such that an optical axis of the camera is substantially orthogonal to the first window, and the axis of the rotor is angled approximately 45 degrees from the optical axis of the camera.
A sleeper which has a concrete body with a sleeper sole attached thereto, wherein for shearing-force-proof connection of the sleeper sole to the concrete body there is provided a connecting layer which is connected at one side to the sleeper sole and at the other side to the concrete body and is hereby partially embedded in the concrete of the concrete body, wherein the connecting layer is formed from or comprises a woven fabric, characterized in that the woven fabric has a three-dimensional structure with which the woven fabric partially extends into the concrete of the concrete body, wherein the woven fabric has curved portions or loops projecting from a main plane at least at one side in the direction of the concrete body, preferably at both sides, and the three-dimensional structure of the woven fabric is formed by a loop-shaped or curved course of at least some of the warp threads or weft threads (10, 10') of the woven fabric and in the case of a loop-shaped or curved course of at least some of the weft threads other weft threads without such a loop-shaped or curved course consist of an elastically extendable material and in the case of a loop-shaped or curved course of at least some of the warp threads other warp threads without such a loop-shaped or curved course consist of an elastically extendable material.
Method for processing various liquid chlorine-comprising waste streams, wherein the method comprises the following steps: mixing the different waste streams into a mixture; burning the mixture at 1100-1400°C wherein combustion gases are released; cooling the combustion gases via a steam boiler to 250-300°C; removing particles, metals, salts and dust from the combustion gases in a two-field electrofilter; cooling the combustion gases in an economizer to 180-220°C; bringing the flue gases in contact with an absorbent in at least two packed absorption columns; obtaining a hydrochloric acid solution; characterized in, that the absorbent has a pH < 7 throughout the at least two packed columns. mixing the different waste streams into a mixture; burning the mixture at 1100-1400°C wherein combustion gases are released; cooling the combustion gases via a steam boiler to 250-300°C; removing particles, metals, salts and dust from the combustion gases in a two-field electrofilter; cooling the combustion gases in an economizer to 180-220°C; bringing the flue gases in contact with an absorbent in at least two packed absorption columns; obtaining a hydrochloric acid solution;
A method for evaluating a pipette tip lag and/or injection mold defect during the production of pipette tips, comprising the following steps: a) Transferring pipette tips from an injection molding device that exhibits several cavities, which in particular are circularly arranged and each bordered by an injection mold, into a carrier for the simultaneous accommodation of a plurality of pipette tips, b) Respectively acquiring first image data for the pipette tip outlet openings of pipette tips in a pipette tip group that are arranged in the carrier simultaneously and/or in chronological sequence so as to determine the actual position of the pipette tip outlet opening of the respective pipette tip by means of first image acquisition means, c) Respectively acquiring second image data for the pipette tips in the pipette tip group to determine a desired position of the pipette tip outlet opening of the respective pipette tip by means of second image acquisition means, which are fixed in place relative to the first image acquisition means, wherein the first image acquisition means acquire the first image data in a viewing direction toward a lower pipette tip end exhibiting the pipette tip, and the second image acquisition means in an opposite viewing direction toward an upper pipette tip end exhibiting an inlet opening, d) Determining the variation rates of the respective actual position of the pipette tip outlet openings in the pipette tip group or a selection of pipette tips in the pipette tip group from the respective desired position, e) Determining an average value for the variation rates or a selection of variation rates. a) Transferring pipette tips from an injection molding device that exhibits several cavities, which in particular are circularly arranged and each bordered by an injection mold, into a carrier for the simultaneous accommodation of a plurality of pipette tips, b) Respectively acquiring first image data for the pipette tip outlet openings of pipette tips in a pipette tip group that are arranged in the carrier simultaneously and/or in chronological sequence so as to determine the actual position of the pipette tip outlet opening of the respective pipette tip by means of first image acquisition means, c) Respectively acquiring second image data for the pipette tips in the pipette tip group to determine a desired position of the pipette tip outlet opening of the respective pipette tip by means of second image acquisition means, which are fixed in place relative to the first image acquisition means, wherein the first image acquisition means acquire the first image data in a viewing direction toward a lower pipette tip end exhibiting the pipette tip, and the second image acquisition means in an opposite viewing direction toward an upper pipette tip end exhibiting an inlet opening, d) Determining the variation rates of the respective actual position of the pipette tip outlet openings in the pipette tip group or a selection of pipette tips in the pipette tip group from the respective desired position, e) Determining an average value for the variation rates or a selection of variation rates.