An electronics device, comprising: a power semiconductor device; a first semiconductor integrated circuit device which drives the power semiconductor device; and a second semiconductor integrated circuit device which controls the first semiconductor integrated circuit device, wherein the power semiconductor device includes a switching transistor, a temperature detection diode, and an ID storage unit which stores ID information of the power semiconductor device, the first semiconductor integrated circuit device includes a drive circuit which drives the switching transistor, and a detection circuit which detects a forward voltage from the temperature detection diode, and the second semiconductor integrated circuit device includes a control unit which controls the drive circuit, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value (VF) which is based on a signal from the detection circuit at a first temperature, a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value which is based on a signal from the detection circuit, the temperature characteristic data, the first temperature which has been acquired by the outside air temperature acquisition unit and the first value (VF), and an ID recognition unit which recognizes the ID information from the ID storage unit, and the temperature characteristic data obtained by wafer testing performed when manufacturing the power semiconductor device is stored into the storage on the basis of the ID information. a power semiconductor device; a first semiconductor integrated circuit device which drives the power semiconductor device; and a second semiconductor integrated circuit device which controls the first semiconductor integrated circuit device, wherein the power semiconductor device includes a switching transistor, a temperature detection diode, and an ID storage unit which stores ID information of the power semiconductor device, a switching transistor, a temperature detection diode, and an ID storage unit which stores ID information of the power semiconductor device, the first semiconductor integrated circuit device includes a drive circuit which drives the switching transistor, and a detection circuit which detects a forward voltage from the temperature detection diode, and a drive circuit which drives the switching transistor, and a detection circuit which detects a forward voltage from the temperature detection diode, and the second semiconductor integrated circuit device includes a control unit which controls the drive circuit, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value (VF) which is based on a signal from the detection circuit at a first temperature, a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value which is based on a signal from the detection circuit, the temperature characteristic data, the first temperature which has been acquired by the outside air temperature acquisition unit and the first value (VF), and an ID recognition unit which recognizes the ID information from the ID storage unit, and a control unit which controls the drive circuit, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value (VF) which is based on a signal from the detection circuit at a first temperature, a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value which is based on a signal from the detection circuit, the temperature characteristic data, the first temperature which has been acquired by the outside air temperature acquisition unit and the first value (VF), and an ID recognition unit which recognizes the ID information from the ID storage unit, and the temperature characteristic data obtained by wafer testing performed when manufacturing the power semiconductor device is stored into the storage on the basis of the ID information.