An emissive multicolor digital image forming device comprising: a two dimensional array of multicolor pixels, each multicolor pixel comprising: a plurality of laser diode semiconductor structures (231, 232, 233; 250, 260, 270), each for emitting a different color of light, stacked vertically with a grid of vertical sidewalls electrically and optically separating each multicolor pixel from adjacent multicolor pixels within the array of multicolor pixels; and a plurality of vertical waveguides optically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) to vertically emit the light generated by the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) from a first surface of the stack of laser diode semiconductor structures; the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270) being stacked onto a digital semiconductor structure by a second surface opposite the first surface of the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270); and a plurality of digital semiconductor circuits in the digital semiconductor structure, each being electrically coupled to receive control signals from the periphery of the digital semiconductor structure and electrically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) by vertical interconnects embedded within the vertical sidewalls to separately control the on/off states of each of the laser diode semiconductor structures (231, 232, 233; 250, 260, 270). a two dimensional array of multicolor pixels, each multicolor pixel comprising: a plurality of laser diode semiconductor structures (231, 232, 233; 250, 260, 270), each for emitting a different color of light, stacked vertically with a grid of vertical sidewalls electrically and optically separating each multicolor pixel from adjacent multicolor pixels within the array of multicolor pixels; and a plurality of vertical waveguides optically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) to vertically emit the light generated by the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) from a first surface of the stack of laser diode semiconductor structures; the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270) being stacked onto a digital semiconductor structure by a second surface opposite the first surface of the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270); and a plurality of digital semiconductor circuits in the digital semiconductor structure, each being electrically coupled to receive control signals from the periphery of the digital semiconductor structure and electrically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) by vertical interconnects embedded within the vertical sidewalls to separately control the on/off states of each of the laser diode semiconductor structures (231, 232, 233; 250, 260, 270). a plurality of laser diode semiconductor structures (231, 232, 233; 250, 260, 270), each for emitting a different color of light, stacked vertically with a grid of vertical sidewalls electrically and optically separating each multicolor pixel from adjacent multicolor pixels within the array of multicolor pixels; and a plurality of vertical waveguides optically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) to vertically emit the light generated by the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) from a first surface of the stack of laser diode semiconductor structures; the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270) being stacked onto a digital semiconductor structure by a second surface opposite the first surface of the stack of laser diode semiconductor structures (231, 232, 233; 250, 260, 270); and a plurality of digital semiconductor circuits in the digital semiconductor structure, each being electrically coupled to receive control signals from the periphery of the digital semiconductor structure and electrically coupled to the laser diode semiconductor structures (231, 232, 233; 250, 260, 270) by vertical interconnects embedded within the vertical sidewalls to separately control the on/off states of each of the laser diode semiconductor structures (231, 232, 233; 250, 260, 270).