A light emitting device (100A, 100B, 100C) comprising: a substrate; a light emitting structure disposed on the substrate and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a submount disposed opposite the substrate; first and second metal pads (162, 164) disposed on the submount to be spaced apart from each other; a first bump disposed on the first metal pad; a plurality of second bumps disposed on the second metal pad to be spaced apart from each other; a first ohmic layer interposed between the first conductivity type semiconductor layer and the first bump; a second ohmic layer (134A, 134B, 134C) interposed between the second conductivity type semiconductor layer and the plurality of second bumps; a first spreading layer interposed between the first ohmic layer and the first bump; a second spreading layer interposed between the second ohmic layer and the plurality of second bumps; and a current blocking layer (190A, 190B, 190C) interposed between the second ohmic layer (134A, 134B, 134C) and the second conductivity type semiconductor layer, wherein the second ohmic layer (134A, 134B, 134C) includes a first region corresponding to a maximum heating area and overlapping an area interposed between the plurality of second bumps in a thickness direction of the light emitting structure, and a second region adjacent to the first region (Al) in a horizontal direction, wherein the current blocking layer (190A, 190B, 190C) is disposed on the first region (Al), in the maximum heating area of the second ohmic layer (134A, 134B, 134C), such that the current blocking layer (190A, 190B, 190C) does not cut the second ohmic layer (134A, 134B, 134C) in the horizontal direction, and has a width smaller than that of the second ohmic layer (134A, 134B, 134C), and the horizontal direction intersects the thickness direction of the light emitting structure, wherein the current blocking layer (190A, 190B, 190C) includes: a first surface in contact with the second conductivity type semiconductor layer; and a second surface facing the second spreading layer in the thickness direction of the light emitting structure and disposed to be opposite the first surface, wherein the second ohmic layer (134A, 134B, 134C) in contact with the second conductivity type semiconductor layer in the second region, and wherein the current blocking layer (190A, 190B, 190C) includes a material in Schottky contact with the second conductivity type semiconductor layer. a substrate; a light emitting structure disposed on the substrate and including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a submount disposed opposite the substrate; first and second metal pads (162, 164) disposed on the submount to be spaced apart from each other; a first bump disposed on the first metal pad; a plurality of second bumps disposed on the second metal pad to be spaced apart from each other; a first ohmic layer interposed between the first conductivity type semiconductor layer and the first bump; a second ohmic layer (134A, 134B, 134C) interposed between the second conductivity type semiconductor layer and the plurality of second bumps; a first spreading layer interposed between the first ohmic layer and the first bump; a second spreading layer interposed between the second ohmic layer and the plurality of second bumps; and a current blocking layer (190A, 190B, 190C) interposed between the second ohmic layer (134A, 134B, 134C) and the second conductivity type semiconductor layer, wherein the second ohmic layer (134A, 134B, 134C) includes a first region corresponding to a maximum heating area and overlapping an area interposed between the plurality of second bumps in a thickness direction of the light emitting structure, and a second region adjacent to the first region (Al) in a horizontal direction, wherein the current blocking layer (190A, 190B, 190C) is disposed on the first region (Al), in the maximum heating area of the second ohmic layer (134A, 134B, 134C), such that the current blocking layer (190A, 190B, 190C) does not cut the second ohmic layer (134A, 134B, 134C) in the horizontal direction, and has a width smaller than that of the second ohmic layer (134A, 134B, 134C), and the horizontal direction intersects the thickness direction of the light emitting structure, wherein the current blocking layer (190A, 190B, 190C) includes: a first surface in contact with the second conductivity type semiconductor layer; and a second surface facing the second spreading layer in the thickness direction of the light emitting structure and disposed to be opposite the first surface, wherein the second ohmic layer (134A, 134B, 134C) in contact with the second conductivity type semiconductor layer in the second region, and wherein the current blocking layer (190A, 190B, 190C) includes a material in Schottky contact with the second conductivity type semiconductor layer.