A method for driving a solid-state imaging device which captures a distance measurement image for measuring a distance to an object irradiated with a pulsed beam having a predetermined pulse width and includes a plurality of pixels (10A, 10B) including at least a first pixel on a semiconductor substrate, the first pixel including: a photoelectric converter which receives reflected light from the object and converts the reflected light into charge; a charge discharger (VPRD) which discharges the charge of the photoelectric converter; an exposure reset gate (PRSO) which switches between timing for accumulating the charge in the photoelectric converter and timing for discharging the charge from the photoelectric converter to the charge discharger (VPRD); a plurality of charge accumulators (SGO, SG2) which accumulate the charge of the photoelectric converter; and a plurality of read gates (TGO, TG2) which are provided between the photoelectric converter and the plurality of charge accumulators (SGO, SG2) and read the charge from the photoelectric converter and include at least a first read gate and a second read gate, the method for driving the solid-state imaging device comprising: performing a first exposure as the exposure that is performed in a first period in which a gate of the first read gate is switched ON into conducting state; and performing a second exposure as the exposure that is performed in a second period which is started in conjunction with an end of the first period and in which a gate of the second read gate is switched ON into conducting state; starting exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in a non-conducting state OFF, after the lapse of a predetermined period of time starting when one of the read gates (TGO, TG2) is placed in a conducting state; stopping the exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in the conducting state, ON, a predetermined period of time before placing the respective read gate (TG0, TG2) in the non-conducting state, OFF, after the exposure is started. a photoelectric converter which receives reflected light from the object and converts the reflected light into charge; a charge discharger (VPRD) which discharges the charge of the photoelectric converter; an exposure reset gate (PRSO) which switches between timing for accumulating the charge in the photoelectric converter and timing for discharging the charge from the photoelectric converter to the charge discharger (VPRD); a plurality of charge accumulators (SGO, SG2) which accumulate the charge of the photoelectric converter; and a plurality of read gates (TGO, TG2) which are provided between the photoelectric converter and the plurality of charge accumulators (SGO, SG2) and read the charge from the photoelectric converter and include at least a first read gate and a second read gate, the method for driving the solid-state imaging device comprising: performing a first exposure as the exposure that is performed in a first period in which a gate of the first read gate is switched ON into conducting state; and performing a second exposure as the exposure that is performed in a second period which is started in conjunction with an end of the first period and in which a gate of the second read gate is switched ON into conducting state; starting exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in a non-conducting state OFF, after the lapse of a predetermined period of time starting when one of the read gates (TGO, TG2) is placed in a conducting state; stopping the exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in the conducting state, ON, a predetermined period of time before placing the respective read gate (TG0, TG2) in the non-conducting state, OFF, after the exposure is started. performing a first exposure as the exposure that is performed in a first period in which a gate of the first read gate is switched ON into conducting state; and performing a second exposure as the exposure that is performed in a second period which is started in conjunction with an end of the first period and in which a gate of the second read gate is switched ON into conducting state; starting exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in a non-conducting state OFF, after the lapse of a predetermined period of time starting when one of the read gates (TGO, TG2) is placed in a conducting state; stopping the exposure of the photoelectric converter by placing the exposure reset gate (PRSO) in the conducting state, ON, a predetermined period of time before placing the respective read gate (TG0, TG2) in the non-conducting state, OFF, after the exposure is started.