A light emitting element comprising: a light emitting structure including a first conductivity type semiconductor layer,an active layer, and a second conductivity type semiconductor layer; and first and second electrodes (142, 146) disposed respectively on the first and second conductivity type semiconductor layers, wherein the light emitting structure includes a first mesa area, and the first conductivity type semiconductor layer includes a second mesa area, wherein the first electrode includes: a first area on a portion of an upper surface of the second mesa area; a second area on a side surface of the second mesa area; and a third area disposed so as to extend from an edge of the side surface of the second mesa area, wherein the side surface of the second mesa area has an inclination angle within a range from 70 degrees to 80 degrees relative to a bottom surface of the first conductivity type semiconductor layer, wherein the light emitting element further comprises an insulating layer disposed on the light emitting structure exposed between the first electrode and the second electrode, wherein the insulating layer is disposed on the first, second, and third areas of the first electrode, wherein the first area, the second area, and the third area have a thickness ratio as follows: d1:d2:d3 = 1:0.9 to 1.1:1 where d1 is a thickness of the first area, d2 is a thickness of the second area, and d3 is a thickness of the third area, in a given section of the light emitting element, wherein the thicknesses of the first, second, and third areas are defined as thicknesses in a direction perpendicular to the surface of the first conductivity type semiconductor layer in respective first, second, and third areas, and wherein the second area of the first electrode is in direct contact with a side surface of the first conductivity type semiconductor layer. a light emitting structure including a first conductivity type semiconductor layer,an active layer, and a second conductivity type semiconductor layer; and first and second electrodes (142, 146) disposed respectively on the first and second conductivity type semiconductor layers, wherein the light emitting structure includes a first mesa area, and the first conductivity type semiconductor layer includes a second mesa area, wherein the first electrode includes: a first area on a portion of an upper surface of the second mesa area; a second area on a side surface of the second mesa area; and a third area disposed so as to extend from an edge of the side surface of the second mesa area, a first area on a portion of an upper surface of the second mesa area; a second area on a side surface of the second mesa area; and a third area disposed so as to extend from an edge of the side surface of the second mesa area, wherein the side surface of the second mesa area has an inclination angle within a range from 70 degrees to 80 degrees relative to a bottom surface of the first conductivity type semiconductor layer, wherein the light emitting element further comprises an insulating layer disposed on the light emitting structure exposed between the first electrode and the second electrode, wherein the insulating layer is disposed on the first, second, and third areas of the first electrode, wherein the first area, the second area, and the third area have a thickness ratio as follows: d1:d2:d3 = 1:0.9 to 1.1:1 where d1 is a thickness of the first area, d2 is a thickness of the second area, and d3 is a thickness of the third area, in a given section of the light emitting element, wherein the thicknesses of the first, second, and third areas are defined as thicknesses in a direction perpendicular to the surface of the first conductivity type semiconductor layer in respective first, second, and third areas, and wherein the second area of the first electrode is in direct contact with a side surface of the first conductivity type semiconductor layer. where d1 is a thickness of the first area, d2 is a thickness of the second area, and d3 is a thickness of the third area, in a given section of the light emitting element, wherein the thicknesses of the first, second, and third areas are defined as thicknesses in a direction perpendicular to the surface of the first conductivity type semiconductor layer in respective first, second, and third areas, and wherein the second area of the first electrode is in direct contact with a side surface of the first conductivity type semiconductor layer.