A method of making a light emitting device, comprising: forming a first semiconductor layer; forming an active layer adjacent to the first semiconductor layer; forming a second semiconductor layer adjacent to the active layer, which is provided between the first and second semiconductor layers; forming a transparent conductive layer comprising a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer; forming a conductive support layer on the transparent conductive layer; forming a reflective layer between the first and second conductive regions (61 and 62) and the conductive support layer; and forming an electrode adjacent the first semiconductor layer to allow at least a portion of the electrode to vertically align with the second region, wherein the first and second semiconductor layers (20 and 40) are of different conductivity types, wherein: one portion of the first transparent conductive region vertically overlaps and contacts the the second semiconductor layer and the other portion of the first transparent conductive region is disposed outside the second semiconductor layer, characterized in that: - a portion of the second transparent conductive region is partially disposed between the first transparent conductive region and the reflective layer and the reflective layer contacts the first transparent conductive region, and wherein an electrical conductivity of the first region is greater than an electrical conductivity of the second region, and wherein the current flowing between the electrode and the conductive support layer widely or mostly flows into the light emitting structure layer through the first region. forming a first semiconductor layer; forming an active layer adjacent to the first semiconductor layer; forming a second semiconductor layer adjacent to the active layer, which is provided between the first and second semiconductor layers; forming a transparent conductive layer comprising a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer; forming a conductive support layer on the transparent conductive layer; forming a reflective layer between the first and second conductive regions (61 and 62) and the conductive support layer; and forming an electrode adjacent the first semiconductor layer to allow at least a portion of the electrode to vertically align with the second region, wherein the first and second semiconductor layers (20 and 40) are of different conductivity types, wherein: one portion of the first transparent conductive region vertically overlaps and contacts the the second semiconductor layer and the other portion of the first transparent conductive region is disposed outside the second semiconductor layer, characterized in that: - a portion of the second transparent conductive region is partially disposed between the first transparent conductive region and the reflective layer and the reflective layer contacts the first transparent conductive region, and wherein an electrical conductivity of the first region is greater than an electrical conductivity of the second region, and wherein the current flowing between the electrode and the conductive support layer widely or mostly flows into the light emitting structure layer through the first region. - a portion of the second transparent conductive region is partially disposed between the first transparent conductive region and the reflective layer and the reflective layer contacts the first transparent conductive region, and