A semiconductor device, comprising: a semiconductor body comprising an active region and a substrate region that is disposed beneath the active region, a bidirectional switch formed in the semiconductor body and configured to control current flow in both directions, the bidirectional switch comprising: first and second gate structures (118, 120) that are each configured to control a conductive state of an electrically conductive channel that is disposed in the upper active region, and first and second input-output terminals (122, 124) that are each in ohmic contact with the electrically conductive channel; a first switching device configured to electrically connect the substrate region to the first input-output terminal; a second switching device configured to electrically connect the substrate region to the second input-output terminal; the semiconductor device being characterized by a passive electrical network comprising a first capacitance and a second capacitance, the first capacitance being connected between a control terminal of the second switching device and the first input-output terminal, the second capacitance being connected between a control terminal of the first switching device and the second input-output terminal; wherein the passive electrical network is configured to temporarily electrically connect the substrate region to the second input-output terminal by turning the second switching device on when the second input-output terminal is at a higher potential than the first input-output terminal, and wherein the passive electrical network is configured to temporarily electrically connect the substrate region to the first input-output terminal by turning the first switching device on when the first input-output terminal is at a higher potential than the second input-output terminal, wherein the first and second switching devices (302, 304) are current controlled switches, wherein the first capacitance is configured to supply a temporary current to the control terminal of the second switching device during a transition of the bidirectional switch from a blocking state to a conducting state at a first voltage polarity of the bidirectional switch, and wherein the second capacitance is configured to supply a temporary current to the control terminal of the first switching device during a transition of the bidirectional switch from a blocking state to a conducting state at a second voltage polarity of the bidirectional switch, the second voltage polarity being opposite from the first voltage polarity. a semiconductor body comprising an active region and a substrate region that is disposed beneath the active region, a bidirectional switch formed in the semiconductor body and configured to control current flow in both directions, the bidirectional switch comprising: first and second gate structures (118, 120) that are each configured to control a conductive state of an electrically conductive channel that is disposed in the upper active region, and first and second input-output terminals (122, 124) that are each in ohmic contact with the electrically conductive channel; a first switching device configured to electrically connect the substrate region to the first input-output terminal; a second switching device configured to electrically connect the substrate region to the second input-output terminal; the semiconductor device being characterized by a passive electrical network comprising a first capacitance and a second capacitance, the first capacitance being connected between a control terminal of the second switching device and the first input-output terminal, the second capacitance being connected between a control terminal of the first switching device and the second input-output terminal; wherein the passive electrical network is configured to temporarily electrically connect the substrate region to the second input-output terminal by turning the second switching device on when the second input-output terminal is at a higher potential than the first input-output terminal, and wherein the passive electrical network is configured to temporarily electrically connect the substrate region to the first input-output terminal by turning the first switching device on when the first input-output terminal is at a higher potential than the second input-output terminal,