A light emitting device for producing enhanced external quantum efficiency LED emission, comprising: - a patterned layer (730, 870, 980, 1075) configured to transform surface modes into directional radiation; - a semiconductor layer (710, 810, 910, 1010) formed as a III/V direct bandgap semiconductor to produce radiation and comprising multiple quantum wells; and - a metal back reflector layer (720, 820, 920, 1020) configured to reflect incident radiation, characterised in that the patterned layer is (a) a hyperbolic metamaterials layer configured to couple near field radiation from the quantum wells into surface modes carrying high momentum that are supported by the hyperbolic metamaterials, wherein the surface modes are transformed into directional radiation, wherein the light emitting device comprises (i) an indium tin oxide positioned between the semiconductor layer and the metal back reflector layer and (ii) a dielectric layer embedding the hyperbolic metamaterials layer, wherein the dielectric layer is configured between the ITO and the metal back reflector layer; or (b) an array of nano-antennas consisting of a metal nano-antenna array or a dielectric nano-antenna array, wherein the light emitting device (800, 900, 1000) comprises (i) a dielectric layer (860, 960, 1060) embedding the nano-antenna array (870, 980, 1075) and (ii) an indium tin oxide or AZO layer (850, 950, 1050) configured to reduce field confinement improving kinetic energy of carriers near the metal back reflector (820, 920, 1020) while still offering high Purcell factors and electrical conduction, wherein: the nano-antenna array (870, 980) is arranged near a surface of the ITO or AZO layer (850, 950) minimizing a distance between the nano-antenna array (870, 980) and an active region, comprising the multiple quantum wells, of the semiconductor layer (810, 910) while keeping the nano-antenna array (870, 980) in the dielectric layer (860, 960); or the ITO or AZO layer is partially etched away at a location of the nano-antenna array wherein nano-particles of the nano-antenna array are proximate or in contact with a surface of the semiconductor layer. - a patterned layer (730, 870, 980, 1075) configured to transform surface modes into directional radiation; - a semiconductor layer (710, 810, 910, 1010) formed as a III/V direct bandgap semiconductor to produce radiation and comprising multiple quantum wells; and - a metal back reflector layer (720, 820, 920, 1020) configured to reflect incident radiation, (a) a hyperbolic metamaterials layer configured to couple near field radiation from the quantum wells into surface modes carrying high momentum that are supported by the hyperbolic metamaterials, wherein the surface modes are transformed into directional radiation, wherein the light emitting device comprises (i) an indium tin oxide positioned between the semiconductor layer and the metal back reflector layer and (ii) a dielectric layer embedding the hyperbolic metamaterials layer, wherein the dielectric layer is configured between the ITO and the metal back reflector layer; or (b) an array of nano-antennas consisting of a metal nano-antenna array or a dielectric nano-antenna array, wherein the light emitting device (800, 900, 1000) comprises (i) a dielectric layer (860, 960, 1060) embedding the nano-antenna array (870, 980, 1075) and (ii) an indium tin oxide or AZO layer (850, 950, 1050) configured to reduce field confinement improving kinetic energy of carriers near the metal back reflector (820, 920, 1020) while still offering high Purcell factors and electrical conduction, wherein: the nano-antenna array (870, 980) is arranged near a surface of the ITO or AZO layer (850, 950) minimizing a distance between the nano-antenna array (870, 980) and an active region, comprising the multiple quantum wells, of the semiconductor layer (810, 910) while keeping the nano-antenna array (870, 980) in the dielectric layer (860, 960); or the ITO or AZO layer is partially etched away at a location of the nano-antenna array wherein nano-particles of the nano-antenna array are proximate or in contact with a surface of the semiconductor layer. the nano-antenna array (870, 980) is arranged near a surface of the ITO or AZO layer (850, 950) minimizing a distance between the nano-antenna array (870, 980) and an active region, comprising the multiple quantum wells, of the semiconductor layer (810, 910) while keeping the nano-antenna array (870, 980) in the dielectric layer (860, 960); or the ITO or AZO layer is partially etched away at a location of the nano-antenna array wherein nano-particles of the nano-antenna array are proximate or in contact with a surface of the semiconductor layer.