A vertically-structured semiconductor light emitting device comprising: a light emitting structure comprising an n-type Group III-V nitride-based semiconductor layer, a Group III-V nitride-based semiconductor active layer and a p-type Group III-V nitride-based semiconductor layer; a first ohmic contact electrode disposed on an upper surface of the n-type semiconductor layer and contacting the upper surface of the n-type semiconductor layer; a second ohmic contact electrode under one portion of a surface of the p-type semiconductor layer; an insulating film under another portion of the surface of the p-type semiconductor layer; a passivation film disposed on a side of the light emitting structure and contacting and connecting with the insulating film. a first conductive film under a part of a lower part of the second ohmic contact electrode; a first metal film under the second conductive film; a metal foil under a bottom part of the first metal film; a first bonding layer disposed between the first metal film and the metal foil; a second metal film under a bottom part of the metal foil; and a second bonding layer disposed between the metal foil and the second metal film, characterised by a second conductive film including an adhesion-enhancing layer under lower parts of the insulating film and the first conductive film and directly contacting the lower parts of the insulating film and the first conductive film, wherein the second conductive film includes a first surface facing the lower part of the first conductive film and a second surface facing the lower part of the insulating film, the second surface being adjacent to the first surface and having uneven shape. a light emitting structure comprising an n-type Group III-V nitride-based semiconductor layer, a Group III-V nitride-based semiconductor active layer and a p-type Group III-V nitride-based semiconductor layer; a first ohmic contact electrode disposed on an upper surface of the n-type semiconductor layer and contacting the upper surface of the n-type semiconductor layer; a second ohmic contact electrode under one portion of a surface of the p-type semiconductor layer; an insulating film under another portion of the surface of the p-type semiconductor layer; a passivation film disposed on a side of the light emitting structure and contacting and connecting with the insulating film. a first conductive film under a part of a lower part of the second ohmic contact electrode; a first metal film under the second conductive film; a metal foil under a bottom part of the first metal film; a first bonding layer disposed between the first metal film and the metal foil; a second metal film under a bottom part of the metal foil; and a second bonding layer disposed between the metal foil and the second metal film, a second conductive film including an adhesion-enhancing layer under lower parts of the insulating film and the first conductive film and directly contacting the lower parts of the insulating film and the first conductive film, wherein the second conductive film includes a first surface facing the lower part of the first conductive film and a second surface facing the lower part of the insulating film, the second surface being adjacent to the first surface and having uneven shape.