A light emitting diode comprising: a first conductivity type semiconductor layer; an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer disposed on the active layer, wherein the plurality of barrier layers comprises a plurality of first barrier layers (141a, 141b, 141c, 141d) comprising an n-type dopant and at least one second barrier layer (141e, 141f, 141g) in which the n-type dopant is not doped, and each of the plurality of first barrier layers (141a, 141b, 141c, 141d) includes a doping concentration of the n-type dopant different from each other, wherein the at least one second barrier layer (141e, 141f, and 141g) is disposed closer to the second conductivity type semiconductor layer than the first conductivity type semiconductor layer, wherein the plurality of first barrier layers (141a, 141b, 141c, or 141d) is adjacent to the first conductivity type semiconductor layer, wherein the doping concentration of the n-type dopant of the plurality of first barrier layers (141a, 141b, 141c, 141d) is gradually increased in order from the first barrier layer away from the second barrier layers (141e, 141f, 141g) to the first barrier layer adjacent to the second barrier layers (141e, 141f, 141g), wherein the first conductivity type semiconductor layer includes an n-type semiconductor layer and the second conductivity type semiconductor layer includes a p-type semiconductor layer, wherein the at least one second barrier layer (141e, 141f, 141g) includes three second barrier layers and wherein the plurality of first barrier layers (141a, 141b, 141c, or 141d) includes four first barrier layers. a first conductivity type semiconductor layer; an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer disposed on the active layer, wherein the plurality of barrier layers comprises a plurality of first barrier layers (141a, 141b, 141c, 141d) comprising an n-type dopant and at least one second barrier layer (141e, 141f, 141g) in which the n-type dopant is not doped, and each of the plurality of first barrier layers (141a, 141b, 141c, 141d) includes a doping concentration of the n-type dopant different from each other, wherein the at least one second barrier layer (141e, 141f, and 141g) is disposed closer to the second conductivity type semiconductor layer than the first conductivity type semiconductor layer, wherein the plurality of first barrier layers (141a, 141b, 141c, or 141d) is adjacent to the first conductivity type semiconductor layer, wherein the doping concentration of the n-type dopant of the plurality of first barrier layers (141a, 141b, 141c, 141d) is gradually increased in order from the first barrier layer away from the second barrier layers (141e, 141f, 141g) to the first barrier layer adjacent to the second barrier layers (141e, 141f, 141g), wherein the first conductivity type semiconductor layer includes an n-type semiconductor layer and the second conductivity type semiconductor layer includes a p-type semiconductor layer, wherein the at least one second barrier layer (141e, 141f, 141g) includes three second barrier layers and wherein the plurality of first barrier layers (141a, 141b, 141c, or 141d) includes four first barrier layers.