Planar photodiode, comprising: ∘ a detection portion of a main semiconductor layer, produced from at least one germanium-based crystalline semiconductor material M0, having first and second faces (F1, F2) parallel to a main plane, and comprising: a p-doped first region flush with the first face; an n-doped second region flush with the second face; and an intermediate region extending between the first and second doped regions (11, 12) and surrounding the doped second region in the main plane while fitting flush with the second face; ∘ a peripheral lateral portion intended to be electrically biased, produced from at least one first electrically conductive material M1 extending, along a vertical axis orthogonal to the main plane, until it comes into contact with the first doped region, and extending in contact with the detection portion while surrounding the intermediate region in the main plane; • the first material M1 having a coefficient of thermal expansion CTE1 lower than that of the material M0, extending from the first face, ▪ the intermediate region comprising a first part P1 surrounded by the first material M1 in the main plane, having mechanical tensile stresses; ∘ characterised in that: the peripheral lateral portion comprises a plurality of distinct electrically conductive materials, stacked one on the other along the vertical axis, among them: • at least one second material M2, extending between the first material M1 and the second face, having a coefficient of thermal expansion CTE2 higher than or equal to that of the material M0, ▪ the intermediate region comprising a second part P2 fitting flush with the second face F2, surrounded by the second material M2 in the main plane, formed by a peripheral lateral zone Z2p having mechanical compressive stresses, which surrounds in the main plane a central zone Z2c having mechanical tensile stresses and where the second doped region is located. ∘ a detection portion of a main semiconductor layer, produced from at least one germanium-based crystalline semiconductor material M0, having first and second faces (F1, F2) parallel to a main plane, and comprising: a p-doped first region flush with the first face; an n-doped second region flush with the second face; and an intermediate region extending between the first and second doped regions (11, 12) and surrounding the doped second region in the main plane while fitting flush with the second face; ∘ a peripheral lateral portion intended to be electrically biased, produced from at least one first electrically conductive material M1 extending, along a vertical axis orthogonal to the main plane, until it comes into contact with the first doped region, and extending in contact with the detection portion while surrounding the intermediate region in the main plane; • the first material M1 having a coefficient of thermal expansion CTE1 lower than that of the material M0, extending from the first face, ▪ the intermediate region comprising a first part P1 surrounded by the first material M1 in the main plane, having mechanical tensile stresses; • the first material M1 having a coefficient of thermal expansion CTE1 lower than that of the material M0, extending from the first face, ▪ the intermediate region comprising a first part P1 surrounded by the first material M1 in the main plane, having mechanical tensile stresses; ▪ the intermediate region comprising a first part P1 surrounded by the first material M1 in the main plane, having mechanical tensile stresses; ∘ characterised in that: the peripheral lateral portion comprises a plurality of distinct electrically conductive materials, stacked one on the other along the vertical axis, among them: • at least one second material M2, extending between the first material M1 and the second face, having a coefficient of thermal expansion CTE2 higher than or equal to that of the material M0, ▪ the intermediate region comprising a second part P2 fitting flush with the second face F2, surrounded by the second material M2 in the main plane, formed by a peripheral lateral zone Z2p having mechanical compressive stresses, which surrounds in the main plane a central zone Z2c having mechanical tensile stresses and where the second doped region is located. • at least one second material M2, extending between the first material M1 and the second face, having a coefficient of thermal expansion CTE2 higher than or equal to that of the material M0, ▪ the intermediate region comprising a second part P2 fitting flush with the second face F2, surrounded by the second material M2 in the main plane, formed by a peripheral lateral zone Z2p having mechanical compressive stresses, which surrounds in the main plane a central zone Z2c having mechanical tensile stresses and where the second doped region is located. ▪ the intermediate region comprising a second part P2 fitting flush with the second face F2, surrounded by the second material M2 in the main plane, formed by a peripheral lateral zone Z2p having mechanical compressive stresses, which surrounds in the main plane a central zone Z2c having mechanical tensile stresses and where the second doped region is located.