An active element structure comprising at least two stacked active elements, each of said active elements of said at least two stacked active elements comprising: - a substrate film which comprises a conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), - an elastic layer (102, 202, 302, 402, 502, 602) comprising a multitude of elastic support nodules (103, 203, 303, 403) arranged in a grid array, so that there is arranged a compression space between the active element and its adjacent active element, said compression space having a space gap between said multitude of elastic support nodules (103, 203, 303, 403), said multitude of elastic support nodules (103, 203, 303, 403) forming, together with a base layer of the same material, an integral part of said elastic layer (102, 202, 302, 402, 502, 602), and - at least one insulating layer (204, 304, 305, 404, 504, 604), said at least one insulating layer (204, 304, 305, 404, 504, 604) covering said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), extending beyond the edge of the area of said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), and making direct contact with said elastic layer (102, 202, 302, 402, 502, 602) in this region for electrical insulation; - wherein said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601) is positioned between said elastic layer (102, 202, 302, 402, 502, 602) and an insulating layer (204, 304, 305, 404, 504, 604) of said at least one insulating layer (204, 304, 305, 404, 504, 604), and - wherein said active element structure is arranged to compress due to electrostatic attraction between adjacent active elements of said at least two stacked active elements when voltage difference is applied between them. - a substrate film which comprises a conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), - an elastic layer (102, 202, 302, 402, 502, 602) comprising a multitude of elastic support nodules (103, 203, 303, 403) arranged in a grid array, so that there is arranged a compression space between the active element and its adjacent active element, said compression space having a space gap between said multitude of elastic support nodules (103, 203, 303, 403), said multitude of elastic support nodules (103, 203, 303, 403) forming, together with a base layer of the same material, an integral part of said elastic layer (102, 202, 302, 402, 502, 602), and - at least one insulating layer (204, 304, 305, 404, 504, 604), said at least one insulating layer (204, 304, 305, 404, 504, 604) covering said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), extending beyond the edge of the area of said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601), and making direct contact with said elastic layer (102, 202, 302, 402, 502, 602) in this region for electrical insulation; - wherein said conductive or semiconductive electrode layer (101, 201, 301, 401, 501, 601) is positioned between said elastic layer (102, 202, 302, 402, 502, 602) and an insulating layer (204, 304, 305, 404, 504, 604) of said at least one insulating layer (204, 304, 305, 404, 504, 604), and - wherein said active element structure is arranged to compress due to electrostatic attraction between adjacent active elements of said at least two stacked active elements when voltage difference is applied between them.