A method of forming a plurality of capacitors, comprising: forming a plurality of spaced masking blocks over a first material, the masking blocks defining respective capacitor electrode opening outlines (25b-33b) thereunder; depositing a layer of second material (36, 36g) over the masking blocks and over first material received between the masking blocks, the second material being of different composition from that of the masking blocks; anisotropically etching the layer of second material effective to expose the masking blocks and form an interconnected retaining structure (40, 40g) against sidewalls of the masking blocks, the interconnected retaining structure exposing some of the first material received between the masking blocks to create openings therein; further etching the retaining structure after formation thereof to widen the openings; after the further etching of the retaining structure, masking the exposed first material received between the masking blocks with a third material; the third material being of different composition from that of the first material, from that of the masking blocks and from that of the second material; etching the masking blocks and then the first material thereunder selectively relative to the second and third materials effective to form capacitor electrode openings (25c-33c) within the first material; forming individual capacitor electrodes (25d-33d) within individual of the capacitor electrode openings and against the interconnected retaining structure; etching the third material selectively relative to the second material and selectively relative to the capacitor electrodes effective to expose first material beneath the etched third material; after said etching of the third material, etching at least some of the exposed first material selectively relative to the capacitor electrodes and selectively relative to the second material effective to expose outer lateral sidewalls of the capacitor electrodes and leave at least some of the second material of the interconnected retaining structure at least in part supporting the capacitor electrodes; and after said etching of the first material effective to expose outer lateral sidewalls of the capacitor electrodes, depositing capacitor dielectric material and capacitor electrode material below the retaining structure over at least some of said outer lateral sidewalls. forming a plurality of spaced masking blocks over a first material, the masking blocks defining respective capacitor electrode opening outlines (25b-33b) thereunder; depositing a layer of second material (36, 36g) over the masking blocks and over first material received between the masking blocks, the second material being of different composition from that of the masking blocks; anisotropically etching the layer of second material effective to expose the masking blocks and form an interconnected retaining structure (40, 40g) against sidewalls of the masking blocks, the interconnected retaining structure exposing some of the first material received between the masking blocks to create openings therein; further etching the retaining structure after formation thereof to widen the openings; after the further etching of the retaining structure, masking the exposed first material received between the masking blocks with a third material; the third material being of different composition from that of the first material, from that of the masking blocks and from that of the second material; etching the masking blocks and then the first material thereunder selectively relative to the second and third materials effective to form capacitor electrode openings (25c-33c) within the first material; forming individual capacitor electrodes (25d-33d) within individual of the capacitor electrode openings and against the interconnected retaining structure; etching the third material selectively relative to the second material and selectively relative to the capacitor electrodes effective to expose first material beneath the etched third material; after said etching of the third material, etching at least some of the exposed first material selectively relative to the capacitor electrodes and selectively relative to the second material effective to expose outer lateral sidewalls of the capacitor electrodes and leave at least some of the second material of the interconnected retaining structure at least in part supporting the capacitor electrodes; and after said etching of the first material effective to expose outer lateral sidewalls of the capacitor electrodes, depositing capacitor dielectric material and capacitor electrode material below the retaining structure over at least some of said outer lateral sidewalls.