Commutation cell for a flying capacitor module, having - a first semiconductor with a first and second terminal (4,5) and a second semiconductor with a third and fourth terminal (7,8), - a first, second, third and fourth capacitor (9,10,11,12) and - a circuit board, wherein - the first semiconductor is connected in a first d.c. voltage phase and the second semiconductor is connected in a second d.c. voltage phase, - the first and the second capacitor (9,10) are each connected in parallel with one another between the first and third terminal (4,7) and the third and the fourth capacitor (11,12) are each connected in parallel with one another between the second and fourth terminal (5,8), - the second and fourth capacitors (10,12) are arranged on a first side of the circuit board of the first and third capacitor (9,11) and on a second side of the circuit board facing away from the first side, - the capacitors (9,11) on the first side are connected to the capacitors (10,12) on the second side by means of vias (18,19,20,21) at the terminals (4,5,7,8), - by means of connection and arrangement of the capacitors (9,10,11,12) a first commutation path is formed on the first side and a second, third and fourth commutation path (23,24,25) are formed along the vias (18,19,20,21) and on the first and second side (16,17), - the first commutation path has the first and third capacitor (9,11), the second commutation path has the second and the fourth capacitor (10,12), the third commutation path has the second and the third capacitor (10,11) and the fourth commutation path has the first and the fourth capacitor (9,12) as respectively adjacent capacitors for the commutation operations, - the capacitors (9,10,11,12) in the commutation paths (22,23,24,25) are formed as commutation capacitors, - the commutation capacitors have a very low inductance for an overall reduction in the parasitic inductances and - the commutation cell is embodied such that - a first flying capacitor is connected between the first and the second d.c. voltage phase (14,15) in parallel with the first and second capacitor (9,10) on an input side of the commutation cell and - a second flying capacitor is connected between the first and the second d.c. voltage circuit (14,15) in parallel with the third and fourth capacitor (11,12) on an output side of the commutation cell. - a first semiconductor with a first and second terminal (4,5) and a second semiconductor with a third and fourth terminal (7,8), - a first, second, third and fourth capacitor (9,10,11,12) and - a circuit board, wherein - the first semiconductor is connected in a first d.c. voltage phase and the second semiconductor is connected in a second d.c. voltage phase, - the first and the second capacitor (9,10) are each connected in parallel with one another between the first and third terminal (4,7) and the third and the fourth capacitor (11,12) are each connected in parallel with one another between the second and fourth terminal (5,8), - the second and fourth capacitors (10,12) are arranged on a first side of the circuit board of the first and third capacitor (9,11) and on a second side of the circuit board facing away from the first side, - the capacitors (9,11) on the first side are connected to the capacitors (10,12) on the second side by means of vias (18,19,20,21) at the terminals (4,5,7,8), - by means of connection and arrangement of the capacitors (9,10,11,12) a first commutation path is formed on the first side and a second, third and fourth commutation path (23,24,25) are formed along the vias (18,19,20,21) and on the first and second side (16,17), - the first commutation path has the first and third capacitor (9,11), the second commutation path has the second and the fourth capacitor (10,12), the third commutation path has the second and the third capacitor (10,11) and the fourth commutation path has the first and the fourth capacitor (9,12) as respectively adjacent capacitors for the commutation operations, - the capacitors (9,10,11,12) in the commutation paths (22,23,24,25) are formed as commutation capacitors, - the commutation capacitors have a very low inductance for an overall reduction in the parasitic inductances and - the commutation cell is embodied such that - a first flying capacitor is connected between the first and the second d.c. voltage phase (14,15) in parallel with the first and second capacitor (9,10) on an input side of the commutation cell and - a second flying capacitor is connected between the first and the second d.c. voltage circuit (14,15) in parallel with the third and fourth capacitor (11,12) on an output side of the commutation cell. - a first flying capacitor is connected between the first and the second d.c. voltage phase (14,15) in parallel with the first and second capacitor (9,10) on an input side of the commutation cell and - a second flying capacitor is connected between the first and the second d.c. voltage circuit (14,15) in parallel with the third and fourth capacitor (11,12) on an output side of the commutation cell.