A method for forming a pore sealing layer, the method comprising the steps of: a. providing a substrate having a porous low dielectric constant layer and a metal layer in a reactor, wherein the substrate has exposed SiOH groups contained within the porous low dielectric constant layer that remain on the layer from one or more of the following manufacturing processes: etching, ash, planarization and/or combinations thereof; b. contacting the substrate with at least one organosilicon compound selected from the group consisting of a compound having one of the following Formulae A through G: (R 4 O) 3-m SiR 2 R 3 m (R 4 O) 3-n R 2 n Si-O-SiR 2 n (OR 3) 3-n (R 4 COO) 3-m SiR 2 R 3 m A B C (R 4 COO) 3-n R 2 n Si-O-SiR 2 n (OOCR 4) 3-n (R 4 O) 3-n R 2 n Si-R 5 -SiR 2 n (OR 4) 3-n D E F (R 3 R 4 N) 3-n R 2 n Si-O-SiR 2 n (NR 3 R 4) 3-n G wherein R 2 and R 3 are each independently selected from the group consisting of a hydrogen atom, a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 5 to C 12 aryl group, a C 2 to C 10 linear or branched alkenyl group, and a C 2 to C 10 linear or branched alkynyl group; R 4 is selected from a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 linear or branched alkenyl group, a C 3 to C 10 linear or branched alkynyl group, and a C 5 -C 12 aryl group; R 5 is a linear or branched C 1-3 alkylene bridge; and R 7 is selected from a C 2 to C 10 alkyl di-radical which forms a three-membered, four-membered, five-membered, or six-membered cyclic ring with the Si atom, and wherein m=0, 1, or 2 and n=0, 1 or 2, to provide an absorbed organosilicon compound on at least a portion of a surface of the porous low dielectric constant layer; c. purging the reactor with a purge gas; d. introducing a plasma into the reactor to react with absorbed organosilicon compound, and e. purging the reactor with a purge gas; wherein steps b through e are repeated until a desired thickness of the pore sealing layer is formed on the surface and provides a sealed dielectric constant layer and wherein an oxidizing environment is avoided during the deposition of the pore sealing layer. a. providing a substrate having a porous low dielectric constant layer and a metal layer in a reactor, wherein the substrate has exposed SiOH groups contained within the porous low dielectric constant layer that remain on the layer from one or more of the following manufacturing processes: etching, ash, planarization and/or combinations thereof; b. contacting the substrate with at least one organosilicon compound selected from the group consisting of a compound having one of the following Formulae A through G: (R 4 O) 3-m SiR 2 R 3 m (R 4 O) 3-n R 2 n Si-O-SiR 2 n (OR 3) 3-n (R 4 COO) 3-m SiR 2 R 3 m A B C (R 4 COO) 3-n R 2 n Si-O-SiR 2 n (OOCR 4) 3-n (R 4 O) 3-n R 2 n Si-R 5 -SiR 2 n (OR 4) 3-n D E F (R 3 R 4 N) 3-n R 2 n Si-O-SiR 2 n (NR 3 R 4) 3-n G wherein R 2 and R 3 are each independently selected from the group consisting of a hydrogen atom, a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 5 to C 12 aryl group, a C 2 to C 10 linear or branched alkenyl group, and a C 2 to C 10 linear or branched alkynyl group; R 4 is selected from a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 linear or branched alkenyl group, a C 3 to C 10 linear or branched alkynyl group, and a C 5 -C 12 aryl group; R 5 is a linear or branched C 1-3 alkylene bridge; and R 7 is selected from a C 2 to C 10 alkyl di-radical which forms a three-membered, four-membered, five-membered, or six-membered cyclic ring with the Si atom, and wherein m=0, 1, or 2 and n=0, 1 or 2, to provide an absorbed organosilicon compound on at least a portion of a surface of the porous low dielectric constant layer; c. purging the reactor with a purge gas; d. introducing a plasma into the reactor to react with absorbed organosilicon compound, and e. purging the reactor with a purge gas; wherein steps b through e are repeated until a desired thickness of the pore sealing layer is formed on the surface and provides a sealed dielectric constant layer and wherein an oxidizing environment is avoided during the deposition of the pore sealing layer.