A touch sensor detector system comprising: (a) a touch sensor array, TSA,; (b) an array column driver, ACD,; (c) a column switching register, CSR,;(d) a column driving source, CDS, (0521, 0523, 0525); (e) an array row sensor, ARS,; (f) a row switching register, RSR,; (g) an analog to digital converter, ADC,; and (h) a computing control device, CCD,; wherein: said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said VIA columns; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said VIA rows; said ACD is configured to select said IIC within said TSA based on said CSR; said ACD is configured to electrically drive said selected IIC using said CDS (0521, 0523, 0525); said ARS is configured to select said IIR within said TSA based on said RSR; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of variable impedance elements within said VIA, where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA, a current divider formed between the rows of said VIA, and the state of the impedance element, to produce a sensed current for a given row-column intersection with said VIA; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure. (a) a touch sensor array, TSA,; (b) an array column driver, ACD,; (c) a column switching register, CSR,;(d) a column driving source, CDS, (0521, 0523, 0525); (e) an array row sensor, ARS,; (f) a row switching register, RSR,; (g) an analog to digital converter, ADC,; and (h) a computing control device, CCD,; said TSA comprises a variable impedance array, VIA, comprising VIA columns and VIA rows; said VIA is configured to electrically couple a plurality of interlinked impedance columns, IIC, within said TSA with a plurality of interlinked impedance rows, IIR, within said TSA; said IIC further comprises a plurality of individual column impedance elements, ICIE, electrically connected in series between said VIA columns; said IIR further comprises a plurality of individual row impedance elements, IRIE, electrically connected in series between said VIA rows; said ACD is configured to select said IIC within said TSA based on said CSR; said ACD is configured to electrically drive said selected IIC using said CDS (0521, 0523, 0525); said ARS is configured to select said IIR within said TSA based on said RSR; said ADC is configured to sense the electrical state of said selected IIR and convert said electrical state to a sensed digital value, SDV; said electrical state is determined by the sum of current contributions of variable impedance elements within said VIA, where the current contribution of each element is determined by a voltage divider formed between the columns of said VIA, a current divider formed between the rows of said VIA, and the state of the impedance element, to produce a sensed current for a given row-column intersection with said VIA; and said CCD is configured to sample said SDV from said ADC at a plurality of positions within said TSA to form a touch sensor matrix, TSM, data structure.