Apparatus for selective transmission of the spectrum of electromagnetic radiation in the range between a lower limit wavelength and a upper limit wavelength, comprising - a semiconductor substrate as a carrier, - a pinhole diaphragm arranged above the carrier and made of a material substantially impermeable to the radiation of interest, - the pinhole diaphragm having at least one radiation passage opening with a width allowing for the passage of radiation of a wavelength less than or equal to the upper limit wavelength, and the width of the at least one or each radiation passage opening being equal to a quarter or smaller than a quarter of the upper limit wavelength, - an electrically insulating and optically transparent dielectric layer formed on the carrier within the radiation passage opening and extending, while adjoining the radiation passage opening, between the carrier and at least one partial region below the pinhole diaphragm, - wherein the pinhole diaphragm comprises two aperture masks (104,111) laterally displaced relative to each other and arranged in different planes above the carrier and the two aperture masks (104,111) comprise mutually overlapping windows defining the at least one radiation passage opening or defining one respective radiation passage opening, - wherein the first aperture mask is formed on the dielectric layer, - wherein, on the first aperture mask and within the window or windows thereof, an intermediate dielectric layer is formed which is made of an electrically insulating and optically permeable dielectric material, - wherein the second aperture mask is formed on the intermediate dielectric layer, - wherein the overall thickness of the double layer comprising the dielectric layer and the intermediate dielectric layer and arranged between the second aperture mask and the carrier, is less than or equal to a half to a quarter of the lower limit wavelength, and - wherein at least the edges of the windows of the two aperture masks (104,111) that define the width of a respective radiation passage opening are beveled in opposite senses, for maximizing of a damping of resonance paths formed by edges with mirroring other surfaces of the apparatus, said damping maximization being effected by oblique further propagation of the radiation after passing through the respective radiation passage opening, and for avoiding or at least minimizing a resonance between the aperture masks (104,111) and the confronting top side of the carrier by scattering the radiation. - a semiconductor substrate as a carrier, - a pinhole diaphragm arranged above the carrier and made of a material substantially impermeable to the radiation of interest, - the pinhole diaphragm having at least one radiation passage opening with a width allowing for the passage of radiation of a wavelength less than or equal to the upper limit wavelength, and the width of the at least one or each radiation passage opening being equal to a quarter or smaller than a quarter of the upper limit wavelength, - an electrically insulating and optically transparent dielectric layer formed on the carrier within the radiation passage opening and extending, while adjoining the radiation passage opening, between the carrier and at least one partial region below the pinhole diaphragm, - wherein the pinhole diaphragm comprises two aperture masks (104,111) laterally displaced relative to each other and arranged in different planes above the carrier and the two aperture masks (104,111) comprise mutually overlapping windows defining the at least one radiation passage opening or defining one respective radiation passage opening, - wherein the first aperture mask is formed on the dielectric layer, - wherein, on the first aperture mask and within the window or windows thereof, an intermediate dielectric layer is formed which is made of an electrically insulating and optically permeable dielectric material, - wherein the second aperture mask is formed on the intermediate dielectric layer, - wherein the overall thickness of the double layer comprising the dielectric layer and the intermediate dielectric layer and arranged between the second aperture mask and the carrier, is less than or equal to a half to a quarter of the lower limit wavelength, and - wherein at least the edges of the windows of the two aperture masks (104,111) that define the width of a respective radiation passage opening are beveled in opposite senses, for maximizing of a damping of resonance paths formed by edges with mirroring other surfaces of the apparatus, said damping maximization being effected by oblique further propagation of the radiation after passing through the respective radiation passage opening, and for avoiding or at least minimizing a resonance between the aperture masks (104,111) and the confronting top side of the carrier by scattering the radiation.