A method of wafer-scale integration of semiconductor devices comprising: - providing a semiconductor wafer comprising integrated circuits, - providing a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, with electrically conductive contact pads, - providing a handling wafer, - dividing the further semiconductor wafer into dies by means of wafer dicing, - arranging the dies on the handling wafer, an electrically conductive contact layer being arranged between the dies and the handling wafer, and permanently fastening the dies to the handling wafer, - bonding the dies to the semiconductor wafer by a bonding layer, gaps between the dies forming a void in the shape of a pattern of trenches, - forming a plurality of openings in the semiconductor wafer above the contact pads of the dies to uncover surface areas of the contact pads, - forming a plurality of further openings in the semiconductor wafer above the voids to uncover surface areas of the contact layer, - covering a sidewall of the openings with an insulation, - covering a sidewall of the further openings and the voids with a further insulation, - applying metal layers forming through-wafer contacts in the further openings on the uncovered surface areas of the contact layer and on the further insulation, said metal layers connecting said contact layer with said integrated circuits and - applying further metal layers forming further through-wafer contacts in the openings on the uncovered surface areas of the contact pads and on the insulation, said further metal layers connecting said contact pads with said integrated circuits. - providing a semiconductor wafer comprising integrated circuits, - providing a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, with electrically conductive contact pads, - providing a handling wafer, - dividing the further semiconductor wafer into dies by means of wafer dicing, - arranging the dies on the handling wafer, an electrically conductive contact layer being arranged between the dies and the handling wafer, and permanently fastening the dies to the handling wafer, - bonding the dies to the semiconductor wafer by a bonding layer, gaps between the dies forming a void in the shape of a pattern of trenches, - forming a plurality of openings in the semiconductor wafer above the contact pads of the dies to uncover surface areas of the contact pads, - forming a plurality of further openings in the semiconductor wafer above the voids to uncover surface areas of the contact layer, - covering a sidewall of the openings with an insulation, - covering a sidewall of the further openings and the voids with a further insulation, - applying metal layers forming through-wafer contacts in the further openings on the uncovered surface areas of the contact layer and on the further insulation, said metal layers connecting said contact layer with said integrated circuits and - applying further metal layers forming further through-wafer contacts in the openings on the uncovered surface areas of the contact pads and on the insulation, said further metal layers connecting said contact pads with said integrated circuits.