A lamp head module comprising: a high aspect ratio monolithically bonded foil micro-channel cooler substrate layer having a greater length than width; a high aspect ratio light emitting device array layer having a greater length than width in the range of 2:1 to 1000:1 and mounted to the micro-channel cooler substrate layer, wherein the micro-channel cooler substrate layer serves a common anode function for the light emitting device array layer, the light emitting device array layer having a high fill-factor wherein the light emitting devices exceed 50% of the area of the array and comprising a p-n junction layer; a flex-circuit layer, including a patterned cathode circuit material layer and a thin dielectric layer, mounted to the micro-channel cooler substrate layer, the cathode circuit material layer separated from the micro-channel cooler substrate layer by the thin dielectric layer, wherein the cathode circuit material layer and the thin dielectric layer combine in thickness to be less than 3x a thickness of the light emitting device array layer; an optical reflector layer to direct photons emitted by said light emitting device array layer, the optical reflector layer being at least 25x a thickness of the light emitting device array layer, wherein the thicknesses are measured in a direction substantially perpendicular to the p-n junction layer; and wherein the optical reflector layer comprises a macro-reflector comprising a right-hand half and a left-hand half each of which represent a portion of an ellipse, each ellipse having two focuses, wherein the two focuses of the right-hand half have corresponding focal points that are offset to the left of a centerline of an intended output beam and the two focuses of the left-hand half have corresponding focal points that are offset to the right of the centerline. a high aspect ratio monolithically bonded foil micro-channel cooler substrate layer having a greater length than width; a high aspect ratio light emitting device array layer having a greater length than width in the range of 2:1 to 1000:1 and mounted to the micro-channel cooler substrate layer, wherein the micro-channel cooler substrate layer serves a common anode function for the light emitting device array layer, the light emitting device array layer having a high fill-factor wherein the light emitting devices exceed 50% of the area of the array and comprising a p-n junction layer; a flex-circuit layer, including a patterned cathode circuit material layer and a thin dielectric layer, mounted to the micro-channel cooler substrate layer, the cathode circuit material layer separated from the micro-channel cooler substrate layer by the thin dielectric layer, wherein the cathode circuit material layer and the thin dielectric layer combine in thickness to be less than 3x a thickness of the light emitting device array layer; an optical reflector layer to direct photons emitted by said light emitting device array layer, the optical reflector layer being at least 25x a thickness of the light emitting device array layer, wherein the thicknesses are measured in a direction substantially perpendicular to the p-n junction layer; and wherein the optical reflector layer comprises a macro-reflector comprising a right-hand half and a left-hand half each of which represent a portion of an ellipse, each ellipse having two focuses, wherein the two focuses of the right-hand half have corresponding focal points that are offset to the left of a centerline of an intended output beam and the two focuses of the left-hand half have corresponding focal points that are offset to the right of the centerline.