A light emitting device comprising: a support member; and a light emitting structure on the support member and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer is a N - type semiconductor layer and the second conductivity type semiconductor layer is a P-type semiconductor layer, wherein the active layer includes: at least one quantum well layer (132a, 132c,...) and at least one barrier layer (132b, 132d...); at least one potential barrier layer located between the first conductivity type semiconductor layer and a first quantum well layer, which is the closest quantum well layer to the first conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential barrier layer includes InN; a first undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer (132b, 132d,...), a potential compensation layer located between the second conductivity type semiconductor layer and the second quantum well layer, which is the closest quantum well layer to the second conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential compensation layer contains InN, and a second undoped barrier layer provided between the potential compensation layer and the second quantum well layer to isolate the potential compensation layer and the second quantum well layer from each other, characterized in that the potential compensation layer includes at least one of C, Si, Ge and Sn. a support member; and a light emitting structure on the support member and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer is a N - type semiconductor layer and the second conductivity type semiconductor layer is a P-type semiconductor layer, wherein the active layer includes: at least one quantum well layer (132a, 132c,...) and at least one barrier layer (132b, 132d...); at least one potential barrier layer located between the first conductivity type semiconductor layer and a first quantum well layer, which is the closest quantum well layer to the first conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential barrier layer includes InN; a first undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer (132b, 132d,...), a potential compensation layer located between the second conductivity type semiconductor layer and the second quantum well layer, which is the closest quantum well layer to the second conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential compensation layer contains InN, and a second undoped barrier layer provided between the potential compensation layer and the second quantum well layer to isolate the potential compensation layer and the second quantum well layer from each other, at least one quantum well layer (132a, 132c,...) and at least one barrier layer (132b, 132d...); at least one potential barrier layer located between the first conductivity type semiconductor layer and a first quantum well layer, which is the closest quantum well layer to the first conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential barrier layer includes InN; a first undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer (132b, 132d,...), a potential compensation layer located between the second conductivity type semiconductor layer and the second quantum well layer, which is the closest quantum well layer to the second conductivity type semiconductor layer out of the at least one quantum well layer (132a, 132c,...), wherein the potential compensation layer contains InN, and a second undoped barrier layer provided between the potential compensation layer and the second quantum well layer to isolate the potential compensation layer and the second quantum well layer from each other, characterized in that the potential compensation layer includes at least one of C, Si, Ge and Sn.