An integrated circuit ("IC") comprising a capacitor, the capacitor comprising: a distribution grid of a first node of the capacitor formed in a first patterned metal layer of the integrated circuit; a first vertical conductive filament (202, 204, 206) connected to and extending away from the distribution grid along a first axis in a first direction being connected to the first node only through the distribution grid; a second vertical conductive filament connected to and extending away from the distribution grid along the first axis in a second direction opposite the first direction being connected to the first node only through the distribution grid; a first number of grid plates (208, 210) of a second node of the capacitor formed above the first patterned metal layer, the first number of grid plates surrounding the first vertical conductive filament; wherein one of the first number of grid plates is formed in a second patterned metal layer of the integrated circuit proximate the first patterned metal layer; and a second number of grid plates (209, 211) of the second node of the capacitor formed below the first patterned metal layer, the first patterned metal layer disposed between the first number of grid plates and the second number of grid plates, the second number of grid plates surrounding the second vertical conductive filament; wherein one of the second number of grid plates is formed in a third metal layer of the integrated circuit proximate the first patterned metal layer; wherein the first number is greater than one and the second number is greater than one, and the first number of grid plates (208, 210) equals the second number of grid plates (209, 211); and wherein the first patterned metal layer further includes a perimeter shield conductor connected to and forming part of the second node; the perimeter shield conductor at least partially but not completely surrounding the distribution grid in the first patterned metal layer, and wherein first vias extend along the perimeter shield conductor, the first vias connecting the perimeter shield conductor to the adjacent ones of the first number of grid plates and the second number of grid plates of the second node, and second vias connecting adjacent plates of the first grid plates and adjacent plates of the second grid plates to each other, the perimeter shield conductor and the first and second vias thus forming a conductive curtain in a plane. a distribution grid of a first node of the capacitor formed in a first patterned metal layer of the integrated circuit; a first vertical conductive filament (202, 204, 206) connected to and extending away from the distribution grid along a first axis in a first direction being connected to the first node only through the distribution grid; a second vertical conductive filament connected to and extending away from the distribution grid along the first axis in a second direction opposite the first direction being connected to the first node only through the distribution grid; a first number of grid plates (208, 210) of a second node of the capacitor formed above the first patterned metal layer, the first number of grid plates surrounding the first vertical conductive filament; wherein one of the first number of grid plates is formed in a second patterned metal layer of the integrated circuit proximate the first patterned metal layer; and a second number of grid plates (209, 211) of the second node of the capacitor formed below the first patterned metal layer, the first patterned metal layer disposed between the first number of grid plates and the second number of grid plates, the second number of grid plates surrounding the second vertical conductive filament; wherein one of the second number of grid plates is formed in a third metal layer of the integrated circuit proximate the first patterned metal layer; wherein the first number is greater than one and the second number is greater than one, and the first number of grid plates (208, 210) equals the second number of grid plates (209, 211); and wherein the first patterned metal layer further includes a perimeter shield conductor connected to and forming part of the second node; the perimeter shield conductor at least partially but not completely surrounding the distribution grid in the first patterned metal layer, and wherein first vias extend along the perimeter shield conductor, the first vias connecting the perimeter shield conductor to the adjacent ones of the first number of grid plates and the second number of grid plates of the second node, and second vias connecting adjacent plates of the first grid plates and adjacent plates of the second grid plates to each other, the perimeter shield conductor and the first and second vias thus forming a conductive curtain in a plane.