A foundry-agnostic post-processing method for a wafer having an active surface, a silicon handle, and a buried oxide layer interposed between the active surface and the silicon handle, the method comprising: removing the wafer from an output yield of a wafer processing foundry; thinning the silicon handle to the buried oxide layer to expose a new surface; and bonding the new surface to an alternate material substrate which provides for enhanced device performance as compared to the silicon handle, wherein the thinning comprises: an initial stage of grinding of outer layers of the silicon handle; a halting of the grinding process so as to avoid grinding the BOX layer or an isolated deep silicon via; a subsequent chemical mechanical polishing of inner layers of the silicon handle; wherein a lower-most layer of the BOX layer is exposed as the new surface, or a layer of the original silicon handle having a thickness of 1-100 μm is exposed as the new surface; and wherein the thinning further comprises: recognizing an existence of the deep silicon via in the wafer; and avoiding an execution of the thinning at a location of the deep silicon via, such that the new surface has an irregular topology prior to the bonding of the alternate material substrate, and wherein the irregular topology of the new surface is absorbed by the alternate material substrate, which will not have any irregularities in its outward topology. removing the wafer from an output yield of a wafer processing foundry; thinning the silicon handle to the buried oxide layer to expose a new surface; and bonding the new surface to an alternate material substrate which provides for enhanced device performance as compared to the silicon handle, wherein the thinning comprises: an initial stage of grinding of outer layers of the silicon handle; a halting of the grinding process so as to avoid grinding the BOX layer or an isolated deep silicon via; a subsequent chemical mechanical polishing of inner layers of the silicon handle; wherein a lower-most layer of the BOX layer is exposed as the new surface, or a layer of the original silicon handle having a thickness of 1-100 μm is exposed as the new surface; and wherein the thinning further comprises: recognizing an existence of the deep silicon via in the wafer; and avoiding an execution of the thinning at a location of the deep silicon via, such that the new surface has an irregular topology prior to the bonding of the alternate material substrate, and wherein the irregular topology of the new surface is absorbed by the alternate material substrate, which will not have any irregularities in its outward topology. an initial stage of grinding of outer layers of the silicon handle; a halting of the grinding process so as to avoid grinding the BOX layer or an isolated deep silicon via; a subsequent chemical mechanical polishing of inner layers of the silicon handle; wherein a lower-most layer of the BOX layer is exposed as the new surface, or a layer of the original silicon handle having a thickness of 1-100 μm is exposed as the new surface; and wherein the thinning further comprises: recognizing an existence of the deep silicon via in the wafer; and avoiding an execution of the thinning at a location of the deep silicon via, such that the new surface has an irregular topology prior to the bonding of the alternate material substrate, and wherein the irregular topology of the new surface is absorbed by the alternate material substrate, which will not have any irregularities in its outward topology. recognizing an existence of the deep silicon via in the wafer; and avoiding an execution of the thinning at a location of the deep silicon via, such that the new surface has an irregular topology prior to the bonding of the alternate material substrate, and wherein the irregular topology of the new surface is absorbed by the alternate material substrate, which will not have any irregularities in its outward topology.