A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation layer disposed between the first electrode and the second electrode, and a second insulation layer disposed on the first insulation layer, wherein the first insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and wherein the second insulation layer comprises a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion, wherein the first electrode comprises a first groove disposed on an upper surface thereof, wherein the first cover electrode comprises a first uneven portion extending from the upper surface of the first electrode into the first groove, wherein the first insulation portion is spaced apart from the first electrode defining a first space region between the first insulation portion and the first electrode, and wherein the first cover electrode comprises a second uneven portion extending from the upper surface of the first electrode into the first space region and contacting the first conductive semiconductor layer. a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation layer disposed between the first electrode and the second electrode, and a second insulation layer disposed on the first insulation layer, wherein the first insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and wherein the second insulation layer comprises a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion, wherein the first electrode comprises a first groove disposed on an upper surface thereof, wherein the first cover electrode comprises a first uneven portion extending from the upper surface of the first electrode into the first groove, wherein the first insulation portion is spaced apart from the first electrode defining a first space region between the first insulation portion and the first electrode, and wherein the first cover electrode comprises a second uneven portion extending from the upper surface of the first electrode into the first space region and contacting the first conductive semiconductor layer.