A low-emissivity transparent laminate comprising: a substrate; and a coating layer, having a multilayer structure comprising a first dielectric layer, a low-emissivity electroconductive layer, a second dielectric layer, a light absorption metal layer, and a third dielectric layer in a sequential order from the substrate; wherein: the second dielectric layer and the light absorption metal layer are adjoining; the low-emissivity transparent laminate has a difference in visible light reflectance from 30% to 75% between one surface thereof at a substrate side and the other surface thereof at a light absorption metal layer side; the low-emissivity electroconductive layer has a thickness from 10 nm to 25 nm and including at least one selected from the group consisting of Ag, Au, Cu, Al, Pt; the light absorption metal layer has a thickness from 5 nm to 25 nm and comprises at least one selected from the group consisting of Ni, Cr, alloys of Ni and Cr, Ti, and combinations thereof; and the first, second and third dielectric layers each have a thickness from 5nm to 50 nm and each comprise at least one selected from the group consisting of titanium oxide, zinc tin oxide, zinc oxide, zinc aluminum oxide, tin oxide, bismuth oxide, silicon nitride, silicon aluminum nitride and combinations thereof. a substrate; and a coating layer, having a multilayer structure comprising a first dielectric layer, a low-emissivity electroconductive layer, a second dielectric layer, a light absorption metal layer, and a third dielectric layer in a sequential order from the substrate; wherein: the second dielectric layer and the light absorption metal layer are adjoining; the low-emissivity transparent laminate has a difference in visible light reflectance from 30% to 75% between one surface thereof at a substrate side and the other surface thereof at a light absorption metal layer side; the low-emissivity electroconductive layer has a thickness from 10 nm to 25 nm and including at least one selected from the group consisting of Ag, Au, Cu, Al, Pt; the light absorption metal layer has a thickness from 5 nm to 25 nm and comprises at least one selected from the group consisting of Ni, Cr, alloys of Ni and Cr, Ti, and combinations thereof; and the first, second and third dielectric layers each have a thickness from 5nm to 50 nm and each comprise at least one selected from the group consisting of titanium oxide, zinc tin oxide, zinc oxide, zinc aluminum oxide, tin oxide, bismuth oxide, silicon nitride, silicon aluminum nitride and combinations thereof. the second dielectric layer and the light absorption metal layer are adjoining; the low-emissivity transparent laminate has a difference in visible light reflectance from 30% to 75% between one surface thereof at a substrate side and the other surface thereof at a light absorption metal layer side; the low-emissivity electroconductive layer has a thickness from 10 nm to 25 nm and including at least one selected from the group consisting of Ag, Au, Cu, Al, Pt; the light absorption metal layer has a thickness from 5 nm to 25 nm and comprises at least one selected from the group consisting of Ni, Cr, alloys of Ni and Cr, Ti, and combinations thereof; and the first, second and third dielectric layers each have a thickness from 5nm to 50 nm and each comprise at least one selected from the group consisting of titanium oxide, zinc tin oxide, zinc oxide, zinc aluminum oxide, tin oxide, bismuth oxide, silicon nitride, silicon aluminum nitride and combinations thereof.