A method for charging an HTS shim device of a superconducting magnet coil system arranged in a cryostat having a room temperature bore by means of a charging device (1, 1'), the HTS shim device comprising n>1 superconductingly closed HTS shim conductor paths (C 1,..., C n) with one shim switch (S 1,..., S n) each for temporarily interrupting the superconducting state in a section of the corresponding HTS shim conductor path (C 1,..., C n), wherein the HTS shim conductor paths (C 1,..., C n) each form a secondary circuit with the shim switches (S 1,..., S n), wherein the HTS shim conductor paths (C 1,..., C n) of the secondary circuits are inductively coupled, wherein the charging device (1, 1') comprises at least one normal-conducting charging coil (P 1,..., P m), at least one power supply and supply lines and forms at least one primary circuit, and a change in the electric current in the secondary circuit inductively occurs by means of a change of the magnetic flux generated by the charging coil (P 1,..., P m) through the surface enclosed by the respective HTS shim conductor path (C 1,..., C n), wherein in a first phase in any order - the shim switch (S 1,..., S n) for interrupting the superconducting state in a section of the HTS shim conductor path (C 1,..., C n) is at least temporarily opened, - the charging coil (P 1,..., P m) is positioned in the room temperature bore of the cryostat, and - at least a change of the electric current in the primary circuit is carried out; in a second phase the HTS shim conductor path (C 1,..., C n) is superconductingly closed by closing the shim switch (S 1,..., S n); and in a third phase with the shim switch (S 1,..., S n) closed the electric current in the primary circuit is changed and/or the charging coil (P 1,..., P m) is removed from the room temperature bore, wherein a sequence of switch openings and switch closures of the shim switches (S 1,..., S n) of the secondary circuits and a sequence of changes in the electric current in the primary circuit are determined, wherein after each last closure of the shim switch (S 1,..., S n) of a secondary circuit within the predetermined sequence a change in the electric current in the primary circuit is performed, wherein the values of the changes in the electric current to be performed in the primary circuit are calculated for the predetermined sequence of the actions such that the sum of all the currents induced by the changes in the electric current in the primary circuit and by the switch openings corresponds to a target current in each secondary circuit, the inductive couplings between the HTS shim conductor paths (C 1,..., C n) with each other and between the charging coil (P 1,..., P m) and the HTS shim conductor paths (C 1,..., C n) are considered. wherein the charging device (1, 1') comprises at least one normal-conducting charging coil (P 1,..., P m), at least one power supply and supply lines and forms at least one primary circuit, and a change in the electric current in the secondary circuit inductively occurs by means of a change of the magnetic flux generated by the charging coil (P 1,..., P m) through the surface enclosed by the respective HTS shim conductor path (C 1,..., C n), wherein in a first phase in any order - the shim switch (S 1,..., S n) for interrupting the superconducting state in a section of the HTS shim conductor path (C 1,..., C n) is at least temporarily opened, - the charging coil (P 1,..., P m) is positioned in the room temperature bore of the cryostat, and - at least a change of the electric current in the primary circuit is carried out; - the shim switch (S 1,..., S n) for interrupting the superconducting state in a section of the HTS shim conductor path (C 1,..., C n) is at least temporarily opened, - the charging coil (P 1,..., P m) is positioned in the room temperature bore of the cryostat, and - at least a change of the electric current in the primary circuit is carried out; in a second phase the HTS shim conductor path (C 1,..., C n) is superconductingly closed by closing the shim switch (S 1,..., S n); and in a third phase with the shim switch (S 1,..., S n) closed the electric current in the primary circuit is changed and/or the charging coil (P 1,..., P m) is removed from the room temperature bore, wherein a sequence of switch openings and switch closures of the shim switches (S 1,..., S n) of the secondary circuits and a sequence of changes in the electric current in the primary circuit are determined, wherein after each last closure of the shim switch (S 1,..., S n) of a secondary circuit within the predetermined sequence a change in the electric current in the primary circuit is performed, wherein the values of the changes in the electric current to be performed in the primary circuit are calculated for the predetermined sequence of the actions such that the sum of all the currents induced by the changes in the electric current in the primary circuit and by the switch openings corresponds to a target current in each secondary circuit, the inductive couplings between the HTS shim conductor paths (C 1,..., C n) with each other and between the charging coil (P 1,..., P m) and the HTS shim conductor paths (C 1,..., C n) are considered.