An active matrix organic light-emitting diode array substrate comprising: a substrate; a plurality of pixel units located on the substrate and arranged in an array, each of the plurality of pixel units comprising a thin film transistor, an organic light-emitting diode and a bottom plate of a storage capacitor, wherein, the bottom plate is arranged above a gate electrode of the thin film transistor and electrically connected to the gate electrode of the thin film transistor; the active matrix organic light-emitting diode array substrate further comprises: a pixel definition layer spacing apart two adjacent pixel units from each other; and a top plate of the storage capacitor provided on the pixel definition layer, the top plate of the storage capacitor being spaced apart from the bottom plate of the storage capacitor by the pixel definition layer, wherein the bottom plate of the storage capacitor is not electrically connected with a source electrode of the thin film transistor; and the top plate of the storage capacitor is not electrically connected with the source electrode of the thin film transistor, wherein, in the pixel definition layer, the part located between the bottom plate of the storage capacitor and the top plate of the storage capacitor has a thickness less than that of other parts of the pixel definition layer, wherein the bottom plate of the storage capacitor is in contact with the pixel definition layer, and the top plate of the storage capacitor is in contact with the pixel definition layer, wherein, a top electrode of the organic light-emitting diode and the top plate of the storage capacitor are made from the same material and located within the same layer, wherein, the bottom plate of the storage capacitor and a bottom electrode of the organic light-emitting diode are made from the same material and located in the same layer. a substrate; a plurality of pixel units located on the substrate and arranged in an array, each of the plurality of pixel units comprising a thin film transistor, an organic light-emitting diode and a bottom plate of a storage capacitor, wherein, the bottom plate is arranged above a gate electrode of the thin film transistor and electrically connected to the gate electrode of the thin film transistor; the active matrix organic light-emitting diode array substrate further comprises: a pixel definition layer spacing apart two adjacent pixel units from each other; and a top plate of the storage capacitor provided on the pixel definition layer, the top plate of the storage capacitor being spaced apart from the bottom plate of the storage capacitor by the pixel definition layer, wherein the bottom plate of the storage capacitor is not electrically connected with a source electrode of the thin film transistor; and the top plate of the storage capacitor is not electrically connected with the source electrode of the thin film transistor, wherein, in the pixel definition layer, the part located between the bottom plate of the storage capacitor and the top plate of the storage capacitor has a thickness less than that of other parts of the pixel definition layer, wherein the bottom plate of the storage capacitor is in contact with the pixel definition layer, and the top plate of the storage capacitor is in contact with the pixel definition layer, wherein, a top electrode of the organic light-emitting diode and the top plate of the storage capacitor are made from the same material and located within the same layer, wherein, the bottom plate of the storage capacitor and a bottom electrode of the organic light-emitting diode are made from the same material and located in the same layer. a pixel definition layer spacing apart two adjacent pixel units from each other; and a top plate of the storage capacitor provided on the pixel definition layer, the top plate of the storage capacitor being spaced apart from the bottom plate of the storage capacitor by the pixel definition layer, wherein the bottom plate of the storage capacitor is not electrically connected with a source electrode of the thin film transistor; and the top plate of the storage capacitor is not electrically connected with the source electrode of the thin film transistor, wherein, in the pixel definition layer, the part located between the bottom plate of the storage capacitor and the top plate of the storage capacitor has a thickness less than that of other parts of the pixel definition layer, wherein the bottom plate of the storage capacitor is in contact with the pixel definition layer, and the top plate of the storage capacitor is in contact with the pixel definition layer, wherein, a top electrode of the organic light-emitting diode and the top plate of the storage capacitor are made from the same material and located within the same layer, wherein, the bottom plate of the storage capacitor and a bottom electrode of the organic light-emitting diode are made from the same material and located in the same layer.