A solar cell comprising: a substrate formed of n-type single crystal silicon; an emitter region of a p-type positioned at a first surface of the substrate, the emitter region including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance; a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate; a plurality of first electrodes (140, 141) which are positioned on the second emitter region to be separated from one another and are connected to the second emitter region; a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions; a first anti-reflection layer which is formed of aluminum oxide and as negative fixed charges, the first anti-reflection layer being positioned directly on the emitter region on which the plurality of first electrodes (140, 141) are not positioned; a second anti-reflection layer which is formed of silicon nitride and has positive fixed charges, the second anti-reflection layer being positioned is directly on the first anti-reflection layer; a first passivation layer which is formed of silicon nitride and has positive fixed charges, the first passivation layer being positioned on the second surface of the substrate on which the plurality of second electrodes are not positioned; and a second passivation layer which is formed of aluminum oxide and has negative fixed charges, the second passivation layer being positioned directly on the first passivation layer, characterized in that the first passivation layer is formed directly on the second surface of the substrate. a substrate formed of n-type single crystal silicon; an emitter region of a p-type positioned at a first surface of the substrate, the emitter region including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance; a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate; a plurality of first electrodes (140, 141) which are positioned on the second emitter region to be separated from one another and are connected to the second emitter region; a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions; a first anti-reflection layer which is formed of aluminum oxide and as negative fixed charges, the first anti-reflection layer being positioned directly on the emitter region on which the plurality of first electrodes (140, 141) are not positioned; a second anti-reflection layer which is formed of silicon nitride and has positive fixed charges, the second anti-reflection layer being positioned is directly on the first anti-reflection layer; a first passivation layer which is formed of silicon nitride and has positive fixed charges, the first passivation layer being positioned on the second surface of the substrate on which the plurality of second electrodes are not positioned; and a second passivation layer which is formed of aluminum oxide and has negative fixed charges, the second passivation layer being positioned directly on the first passivation layer, characterized in that the first passivation layer is formed directly on the second surface of the substrate.