A method of forming a multilayer structure for a pixelated display, the method comprising providing a first wafer (302, 402) comprising first layers (306, 406) disposed over a first substrate (308, 408), said first layers (306, 406) comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer (304, 404) comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers (320, 420) disposed over a second substrate (318, 418), said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process, the double-bonding transfer process comprising: bonding a handle wafer to the first wafer (302, 402), on a side of the first wafer (302, 402) that is opposite the first substrate (308, 408) removing the first substrate (308, 408) from the first wafer (302, 402); and bonding the first wafer (302, 402) to the second wafer (304, 404), wherein a side of the first wafer (302, 402) where the first substrate (308, 408) has been removed is bonded to a side of the second wafer (304, 404) opposite the second substrate (318, 418); characterised in that the method further comprises fabricating the LEDs in the first layers in a manner where the LEDs and CMOS devices do not substantially overlap each other, such that contacts of the CMOS devices are exposed when unused portions of the first layers are removed; or wherein the providing the first wafer comprises providing a first partially processed wafer comprising LEDs formed in the first layers disposed over the first substrate, wherein the LEDs comprises n-contacts and p-contacts of the same height, such that the n-contacts and p-contacts are substantially at the same level, and wherein the side of the first wafer where the first substrate has been removed is bonded to the side of the second wafer opposite the second substrate in a manner where the LEDs and CMOS devices do not substantially overlap each other, such that contacts of the CMOS devices are exposed when unused portions of the first layers are removed. providing a second partially processed wafer (304, 404) comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers (320, 420) disposed over a second substrate (318, 418), said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process, the double-bonding transfer process comprising: bonding a handle wafer to the first wafer (302, 402), on a side of the first wafer (302, 402) that is opposite the first substrate (308, 408) removing the first substrate (308, 408) from the first wafer (302, 402); and bonding the first wafer (302, 402) to the second wafer (304, 404), wherein a side of the first wafer (302, 402) where the first substrate (308, 408) has been removed is bonded to a side of the second wafer (304, 404) opposite the second substrate (318, 418); bonding a handle wafer to the first wafer (302, 402), on a side of the first wafer (302, 402) that is opposite the first substrate (308, 408) removing the first substrate (308, 408) from the first wafer (302, 402); and bonding the first wafer (302, 402) to the second wafer (304, 404), wherein a side of the first wafer (302, 402) where the first substrate (308, 408) has been removed is bonded to a side of the second wafer (304, 404) opposite the second substrate (318, 418); characterised in that the method further comprises fabricating the LEDs in the first layers in a manner where the LEDs and CMOS devices do not substantially overlap each other, such that contacts of the CMOS devices are exposed when unused portions of the first layers are removed; or wherein the providing the first wafer comprises providing a first partially processed wafer comprising LEDs formed in the first layers disposed over the first substrate, wherein the LEDs comprises n-contacts and p-contacts of the same height, such that the n-contacts and p-contacts are substantially at the same level, and wherein the side of the first wafer where the first substrate has been removed is bonded to the side of the second wafer opposite the second substrate in a manner where the LEDs and CMOS devices do not substantially overlap each other, such that contacts of the CMOS devices are exposed when unused portions of the first layers are removed.