A semiconductor device comprising: a plurality of light-emitting parts (P1, P2, P3), wherein each of the light-emitting parts (P1, P2, P3) includes a first conductive type semiconductor layer (110a, 110b, 110c), a second conductive type semiconductor layer (130a, 130b, 130c), and an active layer (120a, 120b, 120c) disposed between the first conductive type semiconductor layer (110a, 110b, 110c) and the second conductive type semiconductor layer (130a, 130b, 130c), a plurality of wavelength conversion layers (181, 182, 183) disposed on the plurality of light-emitting parts (P1, P2, P3), respectively; partitions disposed between the plurality of light-emitting parts (P1, P2, P3) and between the plurality of wavelength conversion layers (181, 182, 183); a plurality of color filters (221, 222, 223) disposed on the plurality of wavelength conversion layers (181, 182, 183), respectively; a black matrix disposed between the plurality of color filters (221, 222, 223); a first bump electrode; a plurality of second bump electrodes electrically connected to the plurality of light-emitting parts (P1, P2, P3), respectively; a first electrode; and a first insulating layer covering lower portions of the plurality of light-emitting parts (P1, P2, P3), characterized in that the first bump electrode is commonly connected to the plurality of light-emitting parts (P1, P2, P3); that the first electrode is electrically connecting the first conductive type semiconductor layers (110a, 110b, 110c) of the plurality of light-emitting parts (P1, P2, P3) to each other; and that the first conductivity type semiconductor layer (110a, 110b, 110c) is formed to narrow in width in a direction opposite to the second conductivity type semiconductor layer (130a, 130b, 130c), a plurality of light-emitting parts (P1, P2, P3), wherein each of the light-emitting parts (P1, P2, P3) includes a first conductive type semiconductor layer (110a, 110b, 110c), a second conductive type semiconductor layer (130a, 130b, 130c), and an active layer (120a, 120b, 120c) disposed between the first conductive type semiconductor layer (110a, 110b, 110c) and the second conductive type semiconductor layer (130a, 130b, 130c), a plurality of wavelength conversion layers (181, 182, 183) disposed on the plurality of light-emitting parts (P1, P2, P3), respectively; partitions disposed between the plurality of light-emitting parts (P1, P2, P3) and between the plurality of wavelength conversion layers (181, 182, 183); a plurality of color filters (221, 222, 223) disposed on the plurality of wavelength conversion layers (181, 182, 183), respectively; a black matrix disposed between the plurality of color filters (221, 222, 223); a first bump electrode; a plurality of second bump electrodes electrically connected to the plurality of light-emitting parts (P1, P2, P3), respectively; a first electrode; and a first insulating layer covering lower portions of the plurality of light-emitting parts (P1, P2, P3), characterized in that the first bump electrode is commonly connected to the plurality of light-emitting parts (P1, P2, P3); that the first electrode is electrically connecting the first conductive type semiconductor layers (110a, 110b, 110c) of the plurality of light-emitting parts (P1, P2, P3) to each other; and that the first conductivity type semiconductor layer (110a, 110b, 110c) is formed to narrow in width in a direction opposite to the second conductivity type semiconductor layer (130a, 130b, 130c),