A control circuit, comprising: a detection module, configured to detect a current operating condition of a semiconductor switching device; a determining module, configured to determine a gate allowable voltage of the semiconductor switching device based on the operating condition detected by the detection module; and an output module, configured to output a control signal to a driving power supply circuit of the semiconductor switching device based on the gate allowable voltage determined by the determining module, to control the driving power supply circuit to provide a gate on voltage that is not higher than the gate allowable voltage and that is positively correlated with the gate allowable voltage for the semiconductor switching device; wherein the determining module comprises: a first gate allowable voltage determining submodule, configured to determine a first value of the gate allowable voltage based on the current operating condition detected by the detection module, wherein the first value is not higher than a gate breakdown voltage of the semiconductor switching device; and wherein the first gate allowable voltage determining submodule comprises: a gate breakdown voltage determining unit, configured to determine the gate breakdown voltage of the semiconductor switching device based on the operating condition detected by the detection module; and a first gate allowable voltage determining unit, configured to determine the first value based on the gate breakdown voltage determined by the gate breakdown voltage determining unit and a preset first margin. a detection module, configured to detect a current operating condition of a semiconductor switching device; a determining module, configured to determine a gate allowable voltage of the semiconductor switching device based on the operating condition detected by the detection module; and an output module, configured to output a control signal to a driving power supply circuit of the semiconductor switching device based on the gate allowable voltage determined by the determining module, to control the driving power supply circuit to provide a gate on voltage that is not higher than the gate allowable voltage and that is positively correlated with the gate allowable voltage for the semiconductor switching device; wherein the determining module comprises: a first gate allowable voltage determining submodule, configured to determine a first value of the gate allowable voltage based on the current operating condition detected by the detection module, wherein the first value is not higher than a gate breakdown voltage of the semiconductor switching device; and wherein the first gate allowable voltage determining submodule comprises: a gate breakdown voltage determining unit, configured to determine the gate breakdown voltage of the semiconductor switching device based on the operating condition detected by the detection module; and a first gate allowable voltage determining unit, configured to determine the first value based on the gate breakdown voltage determined by the gate breakdown voltage determining unit and a preset first margin. a first gate allowable voltage determining submodule, configured to determine a first value of the gate allowable voltage based on the current operating condition detected by the detection module, wherein the first value is not higher than a gate breakdown voltage of the semiconductor switching device; and wherein the first gate allowable voltage determining submodule comprises: a gate breakdown voltage determining unit, configured to determine the gate breakdown voltage of the semiconductor switching device based on the operating condition detected by the detection module; and a first gate allowable voltage determining unit, configured to determine the first value based on the gate breakdown voltage determined by the gate breakdown voltage determining unit and a preset first margin. a gate breakdown voltage determining unit, configured to determine the gate breakdown voltage of the semiconductor switching device based on the operating condition detected by the detection module; and a first gate allowable voltage determining unit, configured to determine the first value based on the gate breakdown voltage determined by the gate breakdown voltage determining unit and a preset first margin.