A light emitting diode package (20, 40, 80, 110) comprising: a light emitting diode, the light emitting diode preferably being a blue light source or an ultraviolet light source; a stack structure (24, 34,54,104) spaced apart from the light emitting diode comprising, a light-scattering structure (23, 103); a light conversion layer (25; 35; 105) disposed on at least one surface selected from an inner surface and an outer surface of the light-scattering structure (23; 103) and configured to convert light emitted from the light emitting diode into white light, wherein the light conversion layer (25; 35; 105) comprises a semiconductor nanocrystal, the light conversion layer (25; 35; 105) preferably comprising a yellow semiconductor nanocrystal or a mixture of a red semiconductor nanocrystal and a green semiconductor nanocrystal, the semiconductor preferably having a full width at half maximum of less than or equal to 45 nanometers in a photoluminance wavelength spectrum; and a first inorganic barrier layer (38; 58; 78): characterized in that: the stack structure further comprises an organic barrier layer (27; 37; 57) disposed on a surface of the light conversion layer (25; 35; 105); the first inorganic barrier layer (38; 58; 78) is between the light conversion layer (25; 35; 105) and the organic barrier layer (27; 37; 57) and the light-scattering structure (23; 103) has a transmittance of greater than or equal to 80 %. a light emitting diode, the light emitting diode preferably being a blue light source or an ultraviolet light source; a stack structure (24, 34,54,104) spaced apart from the light emitting diode comprising, a light-scattering structure (23, 103); a light conversion layer (25; 35; 105) disposed on at least one surface selected from an inner surface and an outer surface of the light-scattering structure (23; 103) and configured to convert light emitted from the light emitting diode into white light, wherein the light conversion layer (25; 35; 105) comprises a semiconductor nanocrystal, the light conversion layer (25; 35; 105) preferably comprising a yellow semiconductor nanocrystal or a mixture of a red semiconductor nanocrystal and a green semiconductor nanocrystal, the semiconductor preferably having a full width at half maximum of less than or equal to 45 nanometers in a photoluminance wavelength spectrum; and a first inorganic barrier layer (38; 58; 78): characterized in that: the stack structure further comprises an organic barrier layer (27; 37; 57) disposed on a surface of the light conversion layer (25; 35; 105); the first inorganic barrier layer (38; 58; 78) is between the light conversion layer (25; 35; 105) and the organic barrier layer (27; 37; 57) and the light-scattering structure (23; 103) has a transmittance of greater than or equal to 80 %. the stack structure further comprises an organic barrier layer (27; 37; 57) disposed on a surface of the light conversion layer (25; 35; 105); the first inorganic barrier layer (38; 58; 78) is between the light conversion layer (25; 35; 105) and the organic barrier layer (27; 37; 57) and the light-scattering structure (23; 103) has a transmittance of greater than or equal to 80 %.