A method for producing a semiconductor device comprising: a step of setting a rated voltage, V rate; a step of setting a rated current density, J F; a step of performing proton implantation from one main surface of a semiconductor substrate; a step of heating the entire semiconductor substrate at a high temperature to form a hydrogen-induced donor using the proton implantation, thereby forming an n-type field stop layer in the semiconductor substrate; and a step of heating a portion of the semiconductor substrate corresponding to the range of the implanted protons from the one main surface to reduce a disorder generated in a proton passage region, thereby forming an n-type disorder reduction region, to form the plurality of n-type intermediate layers, wherein a minimum value of a carrier mobility in the plurality of the disorder reduction regions is equal to or more than 20% of the carrier mobility in a crystal state, wherein the depth of a position where carrier concentration is the maximum in the field stop layer which is adjacent to a p-type base layer, with an n-type drift layer interposed therebetween, from the one main surface is more than 15 μm, and wherein, when q is an elementary charge, N d is the average concentration of the drift layer, ε s is the permittivity of the semiconductor substrate, V rate is the rated voltage, J F is the rated current density, and V sat is a saturated velocity in which a carrier speed is saturated with predetermined electric field intensity, a distance index L is represented by the following Expression: and when the depth of the position where the carrier concentration is the maximum in the field stop layer which is adjacent to the base layer, with the drift layer interposed therebetween, from the one main surface is X and the thickness of the semiconductor substrate is W0, X = W0-γL is established and γ is in the range of 0.9 to 1.2. a step of setting a rated voltage, V rate; a step of setting a rated current density, J F; a step of performing proton implantation from one main surface of a semiconductor substrate; a step of heating the entire semiconductor substrate at a high temperature to form a hydrogen-induced donor using the proton implantation, thereby forming an n-type field stop layer in the semiconductor substrate; and a step of heating a portion of the semiconductor substrate corresponding to the range of the implanted protons from the one main surface to reduce a disorder generated in a proton passage region, thereby forming an n-type disorder reduction region, to form the plurality of n-type intermediate layers, wherein a minimum value of a carrier mobility in the plurality of the disorder reduction regions is equal to or more than 20% of the carrier mobility in a crystal state, wherein the depth of a position where carrier concentration is the maximum in the field stop layer which is adjacent to a p-type base layer, with an n-type drift layer interposed therebetween, from the one main surface is more than 15 μm, and wherein, when q is an elementary charge, N d is the average concentration of the drift layer, ε s is the permittivity of the semiconductor substrate, V rate is the rated voltage, J F is the rated current density, and V sat is a saturated velocity in which a carrier speed is saturated with predetermined electric field intensity, a distance index L is represented by the following Expression: and when the depth of the position where the carrier concentration is the maximum in the field stop layer which is adjacent to the base layer, with the drift layer interposed therebetween, from the one main surface is X and the thickness of the semiconductor substrate is W0, X = W0-γL is established and γ is in the range of 0.9 to 1.2.