A method of forming a microelectronic structure, said method comprising: (a) providing a substrate having a surface; (b) applying a hardmask composition adjacent the substrate surface, said hardmask composition comprising a polymer and a photoacid generator dispersed or dissolved in a solvent system, said polymer comprises recurring monomers of where: each R 1 is individually selected from the group consisting of -H, and C 1 -C 4 alkyl groups; and each R 2 is individually selected from the group consisting of -H, and silicon-containing moieties selected from the group consisting of where each R 3 is selected from the group consisting of C 1 -C 4 alkyl groups, and each R 4 is selected from the group consisting of n-butyl, t-butyl, and C 2 -C 3 alkyl groups, and wherein at least one of said R 2 is a silicon-containing moiety and one is an -H; (c) baking said hardmask composition so as to thermally crosslink said hardmask composition and yield a hardmask layer; (d) applying a photosensitive composition to form a first imaging layer on top of said hardmask layer; (e) exposing said first imaging layer to activating radiation to yield exposed portions in said first imaging layer; (f) contacting said first imaging layer with an alkaline developer so as to remove said exposed portions of said first imaging layer, wherein said contacting also results in the removal of portions of said hardmask layer beneath said exposed portions in said first imaging layer, yielding a patterned hardmask layer; (g) contacting said first imaging layer with an organic solvent so as to remove said first imaging layer; and (h) applying a second photosensitive composition to form a second imaging layer on top of said patterned hardmask layer, without applying additional hardmask composition to said substrate. (a) providing a substrate having a surface; (b) applying a hardmask composition adjacent the substrate surface, said hardmask composition comprising a polymer and a photoacid generator dispersed or dissolved in a solvent system, said polymer comprises recurring monomers of where: each R 1 is individually selected from the group consisting of -H, and C 1 -C 4 alkyl groups; and each R 2 is individually selected from the group consisting of -H, and silicon-containing moieties selected from the group consisting of where each R 3 is selected from the group consisting of C 1 -C 4 alkyl groups, and each R 4 is selected from the group consisting of n-butyl, t-butyl, and C 2 -C 3 alkyl groups, and wherein at least one of said R 2 is a silicon-containing moiety and one is an -H; each R 1 is individually selected from the group consisting of -H, and C 1 -C 4 alkyl groups; and each R 2 is individually selected from the group consisting of -H, and silicon-containing moieties selected from the group consisting of where each R 3 is selected from the group consisting of C 1 -C 4 alkyl groups, and each R 4 is selected from the group consisting of n-butyl, t-butyl, and C 2 -C 3 alkyl groups, and wherein at least one of said R 2 is a silicon-containing moiety and one is an -H; (c) baking said hardmask composition so as to thermally crosslink said hardmask composition and yield a hardmask layer; (d) applying a photosensitive composition to form a first imaging layer on top of said hardmask layer; (e) exposing said first imaging layer to activating radiation to yield exposed portions in said first imaging layer; (f) contacting said first imaging layer with an alkaline developer so as to remove said exposed portions of said first imaging layer, wherein said contacting also results in the removal of portions of said hardmask layer beneath said exposed portions in said first imaging layer, yielding a patterned hardmask layer; (g) contacting said first imaging layer with an organic solvent so as to remove said first imaging layer; and (h) applying a second photosensitive composition to form a second imaging layer on top of said patterned hardmask layer, without applying additional hardmask composition to said substrate.