A method of fabricating a frontside-illuminated barrier infrared photodetector, the method comprising: providing a semiconductor wafer comprising a bulk substrate layer, an absorber layer (115, 135) on the bulk substrate layer, a barrier layer (114, 134) on the absorber layer (115, 135), and a collector layer (113, 133) on the barrier layer (114, 134), wherein: the bulk substrate layer is on a backside of the semiconductor wafer; the collector layer (113, 133) is on a frontside of the semiconductor wafer; the absorber layer (115, 135) is operable to absorb photon radiation; the barrier layer (114, 134) comprises a material having a wide band gap such that a flow of a first carrier type is impeded, and a flow of a second carrier type is unimpeded; and the barrier layer (114, 134) and the absorber layer (115, 135) form a heterojunction; applying a plurality of frontside common electrical contacts to the collector layer (113, 133); bonding a transparent carrier substrate to the frontside of the semiconductor wafer and the plurality of frontside common electrical contacts, wherein the transparent carrier substrate is transparent to radiation in a predetermined wavelength range; thinning the bulk substrate layer of the semiconductor wafer; reticulating the absorber layer (115, 135) and the barrier layer (114, 134) to form a plurality of stacks, wherein the absorber layer (115, 135) and the barrier layer (114, 134) are non-continuous across the plurality of stacks; applying a backside electrical contact to each stack to form a plurality of pixels (130, 130', 130"), wherein the plurality of pixels (130, 130', 130") is at least partially reticulated; singulating the semiconductor wafer and the transparent carrier substrate into at least one barrier infrared photodetector array wherein the absorber layer (115, 135) comprises unintentionally doped GaSb, InAs x Sb 1-x /InAs superlattice, Ga y In 1-y As x Sb 1-x /Ga y In 1-y Sb superlattice, Ga y In 1-y As x Sb 1-x, Al y In 1-y As x Sb 1-x /Al y In 1-y As superlattice, or combinations thereof. providing a semiconductor wafer comprising a bulk substrate layer, an absorber layer (115, 135) on the bulk substrate layer, a barrier layer (114, 134) on the absorber layer (115, 135), and a collector layer (113, 133) on the barrier layer (114, 134), wherein: the bulk substrate layer is on a backside of the semiconductor wafer; the collector layer (113, 133) is on a frontside of the semiconductor wafer; the absorber layer (115, 135) is operable to absorb photon radiation; the barrier layer (114, 134) comprises a material having a wide band gap such that a flow of a first carrier type is impeded, and a flow of a second carrier type is unimpeded; and the barrier layer (114, 134) and the absorber layer (115, 135) form a heterojunction; the bulk substrate layer is on a backside of the semiconductor wafer; the collector layer (113, 133) is on a frontside of the semiconductor wafer; the absorber layer (115, 135) is operable to absorb photon radiation; the barrier layer (114, 134) comprises a material having a wide band gap such that a flow of a first carrier type is impeded, and a flow of a second carrier type is unimpeded; and the barrier layer (114, 134) and the absorber layer (115, 135) form a heterojunction; applying a plurality of frontside common electrical contacts to the collector layer (113, 133); bonding a transparent carrier substrate to the frontside of the semiconductor wafer and the plurality of frontside common electrical contacts, wherein the transparent carrier substrate is transparent to radiation in a predetermined wavelength range; thinning the bulk substrate layer of the semiconductor wafer; reticulating the absorber layer (115, 135) and the barrier layer (114, 134) to form a plurality of stacks, wherein the absorber layer (115, 135) and the barrier layer (114, 134) are non-continuous across the plurality of stacks; applying a backside electrical contact to each stack to form a plurality of pixels (130, 130', 130"), wherein the plurality of pixels (130, 130', 130") is at least partially reticulated; singulating the semiconductor wafer and the transparent carrier substrate into at least one barrier infrared photodetector array wherein the absorber layer (115, 135) comprises unintentionally doped GaSb, InAs x Sb 1-x /InAs superlattice, Ga y In 1-y As x Sb 1-x /Ga y In 1-y Sb superlattice, Ga y In 1-y As x Sb 1-x, Al y In 1-y As x Sb 1-x /Al y In 1-y As superlattice, or combinations thereof.