mhurhangee/ep-ind-claims huggingface dataset:
A touch sensitive device, comprising: an electroactive layer made of an electroactive polymer; and one or more first electrodes and one or more second electrodes disposed on the same surface of the electroactive layer; wherein the one or more first electrodes and the one or more second electrodes are made of a conductive material. an electroactive layer made of an electroactive polymer; and one or more first electrodes and one or more second electrodes disposed on the same surface of the electroactive layer; wherein the one or more first electrodes and the one or more second electrodes are made of a conductive material.
A transparent antenna for a vehicle comprising a sheet-like transparent substrate with an electrical isolation and an antenna pattern planarly formed on a surface of the transparent substrate, wherein an electrically conductive section of said antenna pattern is constructed from an electrically conductive thin film of a mesh structure and outlines of each mesh are constructed from metal wires (1i - 1m) having substantially equal width and the width of each of the metal wires (1i - 1m) is 30 μm or less and the light transmittance of said antenna pattern formation section is 70% or higher, wherein a gradation section is formed in the boundary region between said antenna pattern and an edge of said transparent substrate on which the antenna pattern is attached for decreasing luminance difference between said antenna pattern and an antenna non-formation section formed in the area between said gradation section and said edge of said transparent substrate on said transparent substrate, wherein said gradation section is formed by partially eliminating the mesh outlines of said antenna pattern in said boundary region or coarsening the meshes, wherein said gradation section is further formed by making the length of said eliminated outlines of said meshes or the aperture width of said meshes longer step by step from said antenna pattern side to said antenna pattern non-formation section.
An audio loudness control system comprising: a processor; a loudness adjuster module executable by the processor to dynamically determine an adjustment of a loudness level of an audio signal and a timing of performance of the adjustment based on parameters related to the audio signal that are available to the loudness adjuster module; and a gain adjustment module executable by the processor to dynamically attenuate, boost or pass through the audio signal in accordance with the timing of performance and the adjustment of the loudness level determined by the loudness adjuster module, wherein the loudness adjuster module is further executable to adjust the loudness level of the audio signal within an initial adaptation period that begins when there is a change in an audio source or in the audio content of the audio signal and ends after a determined window of time has elapsed, and wherein the loudness adjuster module is further executable to enter into a limited adaptation period after the initial adaptation period, the limited adaptation period being longer than the initial adaptation period and being a determined period of time in which the loudness adjuster module refrains from employing adjustments to the loudness level. a processor; a loudness adjuster module executable by the processor to dynamically determine an adjustment of a loudness level of an audio signal and a timing of performance of the adjustment based on parameters related to the audio signal that are available to the loudness adjuster module; and a gain adjustment module executable by the processor to dynamically attenuate, boost or pass through the audio signal in accordance with the timing of performance and the adjustment of the loudness level determined by the loudness adjuster module,
A diaphragm pump, having a diaphragm coupled to a wobble plate, the diaphragm and the wobble plate each having a front surface disposed so as to face the other, the coupling comprising: a post protruding from the front surface of the wobble plate and at least partially surrounded by a collar; and a pin protruding from the front surface of the diaphragm, the pin having a recess for mating with the post, and having an outer portion surrounding the recess, characterized in that the outer portion is able to resiliently deform so as to squeeze through the collar when the pin is pushed onto the post. a post protruding from the front surface of the wobble plate and at least partially surrounded by a collar; and a pin protruding from the front surface of the diaphragm, the pin having a recess for mating with the post, and having an outer portion surrounding the recess,
A method for preparing a negative electrode active material comprising: (a) preparing a coating composition comprising a precursor of a metal-phosphorous-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon, the heat treatment being carried out in a temperature range of 150°C or higher and lower than 500°C; wherein the precursor of a metal-phosphorous-oxynitride is prepared by a reaction of a compound comprising a phosphorous-nitrogen bond with a metal salt compound, the compound comprising a phosphorous-nitrogen bond comprising at least one selected from the compounds represented by the following Chemical Formulae 1 to 3: wherein each X 1 is the same or different from each other and each independently is OR 1, F, Cl, Br or I, wherein R 1 is an alkyl group having 1 to 5 carbon atoms; wherein R 2 and R 3 are the same or different from each other and each independently is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms; wherein each X 2 is the same or different from each other and each independently is R 4, OR 5, NR 6 R 7, F, Cl, Br or I, wherein R 4 to R 7 are the same or different from each other and each independently is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms and n is an integer of 100 to 100,000. (a) preparing a coating composition comprising a precursor of a metal-phosphorous-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon, the heat treatment being carried out in a temperature range of 150°C or higher and lower than 500°C; wherein the precursor of a metal-phosphorous-oxynitride is prepared by a reaction of a compound comprising a phosphorous-nitrogen bond with a metal salt compound, the compound comprising a phosphorous-nitrogen bond comprising at least one selected from the compounds represented by the following Chemical Formulae 1 to 3: wherein each X 1 is the same or different from each other and each independently is OR 1, F, Cl, Br or I, wherein R 1 is an alkyl group having 1 to 5 carbon atoms; wherein R 2 and R 3 are the same or different from each other and each independently is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms; wherein each X 2 is the same or different from each other and each independently is R 4, OR 5, NR 6 R 7, F, Cl, Br or I, wherein R 4 to R 7 are the same or different from each other and each independently is an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms and n is an integer of 100 to 100,000.
A method for Packet-over-DWDM provisioning and deactivating Packet-over-DWDM links comprising: detecting an optical wavelength at an optical interface of a network device configured to send traffic between a packet switched network and an optical network; sending to an optical control plane a message comprising information configured to request optical configuration information for the optical wavelength; receiving a response to the message, the response comprising the optical configuration information; activating a connection on the wavelength at the optical interface using the optical configuration information; receiving over the wavelength a frame that is formatted according to an optical protocol; extracting from an overhead portion of the frame packet switched network information that identify network parameters for configuring a packet switched network link and associated routing; detecting that the optical wavelength has been deactivated; deleting the optical configuration information in order to free the optical interface to accommodate a new wavelength; and removing the network parameters for the packet switched network link in order to deactivate the packet switched network link. detecting an optical wavelength at an optical interface of a network device configured to send traffic between a packet switched network and an optical network; sending to an optical control plane a message comprising information configured to request optical configuration information for the optical wavelength; receiving a response to the message, the response comprising the optical configuration information; activating a connection on the wavelength at the optical interface using the optical configuration information; receiving over the wavelength a frame that is formatted according to an optical protocol; extracting from an overhead portion of the frame packet switched network information that identify network parameters for configuring a packet switched network link and associated routing; detecting that the optical wavelength has been deactivated; deleting the optical configuration information in order to free the optical interface to accommodate a new wavelength; and removing the network parameters for the packet switched network link in order to deactivate the packet switched network link.
A nitride-based light emitting heterostructure comprising: an electron supply layer; a hole supply layer; and a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including: a set of barrier layers; and a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein each barrier layer has a graded composition which causes electrons to lose energy prior to entering a quantum well and reduces a barrier for holes and characterised in that the thickness of each quantum well is smaller than approximately 4,5 nm to ensure such that an electron ground state of each quantum well is above a band bending range of energies caused by a set of polarization effects. an electron supply layer; a hole supply layer; and a light generating structure disposed between the electron supply layer and the hole supply layer, the light generating structure including: a set of barrier layers; and a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein each barrier layer has a graded composition which causes electrons to lose energy prior to entering a quantum well and reduces a barrier for holes and characterised in that the thickness of each quantum well is smaller than approximately 4,5 nm to ensure such that an electron ground state of each quantum well is above a band bending range of energies caused by a set of polarization effects. a set of barrier layers; and a set of quantum wells, each quantum well adjoined by a barrier layer and having a thickness less than a characteristic radius of a defect responsible for nonradiative recombination, wherein each barrier layer has a graded composition which causes electrons to lose energy prior to entering a quantum well and reduces a barrier for holes and characterised in that the thickness of each quantum well is smaller than approximately 4,5 nm to ensure such that an electron ground state of each quantum well is above a band bending range of energies caused by a set of polarization effects.
Housing sealing arrangement for a vehicle application, in particular for electrical vehicles, comprising a housing having a sealing end face which is provided for producing a seal with a mating housing, characterized in that a stepped groove is provided in the housing along the sealing end face, said stepped groove having at least one first step as a support surface for a first sealing element and a second (lower) step as a support surface for a second sealing element.
A method for managing subscriber usage in a mobile network by a policy and charging rules function (PCRF) device comprising: receiving, by the PCRF device, a credit control request message from a policy and enforcement rules function (PCEF) for an application; characterised by: determining, by the PCRF device, whether a Sy connection to an online charging system is necessary to implement the CCR; determining, by the PCRF device, whether a Sy session is present; sending, by the PCRF device, an application authorization request message to the OCS; receiving, from the OCS, an application authorization answer message including a Sy counter used by the OCS to track usage associated with a user of the application; mapping, by the PCRF device, a PCRF metering limit to the Sy counter, wherein the PCRF metering limit is an object used by the PCRF device to determine policies to apply in response to reported usage; binding, by the PCRF device, the PCRF metering limit to the application; determining, by the PCRF device, a policy to apply based upon the application, the PCRF metering limit, and usage reported by the OCS via the Sy counter; and sending, by the PCRF device, a credit control answer message to the PCEF to effect the policy. receiving, by the PCRF device, a credit control request message from a policy and enforcement rules function (PCEF) for an application; characterised by: determining, by the PCRF device, whether a Sy connection to an online charging system is necessary to implement the CCR; determining, by the PCRF device, whether a Sy session is present; sending, by the PCRF device, an application authorization request message to the OCS; receiving, from the OCS, an application authorization answer message including a Sy counter used by the OCS to track usage associated with a user of the application; mapping, by the PCRF device, a PCRF metering limit to the Sy counter, wherein the PCRF metering limit is an object used by the PCRF device to determine policies to apply in response to reported usage; binding, by the PCRF device, the PCRF metering limit to the application; determining, by the PCRF device, a policy to apply based upon the application, the PCRF metering limit, and usage reported by the OCS via the Sy counter; and sending, by the PCRF device, a credit control answer message to the PCEF to effect the policy.
A non-volatile storage system comprising: a memory array that includes a plurality of bit lines and a plurality of sense blocks; a plurality of bit line select transistors (M0, M1,...Ml 5) arranged in a bit line select transistor array (800, 1000), each bit line select transistor coupled between a corresponding one of the bit lines and a corresponding one of the sense blocks, the bit line select transistor array comprising a first bit line select transistor adjacent an edge of the bit line select transistor array; characterized by, a first dummy bit line select transistor adjacent the first bit line select transistor, wherein: the first bit line select transistor has a first transistor width; and the first dummy bit line select transistor has a second transistor width greater than the first transistor width. a memory array that includes a plurality of bit lines and a plurality of sense blocks; a plurality of bit line select transistors (M0, M1,...Ml 5) arranged in a bit line select transistor array (800, 1000), each bit line select transistor coupled between a corresponding one of the bit lines and a corresponding one of the sense blocks, the bit line select transistor array comprising a first bit line select transistor adjacent an edge of the bit line select transistor array; characterized by, a first dummy bit line select transistor adjacent the first bit line select transistor, wherein: the first bit line select transistor has a first transistor width; and the first dummy bit line select transistor has a second transistor width greater than the first transistor width. the first bit line select transistor has a first transistor width; and the first dummy bit line select transistor has a second transistor width greater than the first transistor width.
A stage light fixture, including a finned heat-exchange system, which comprises: a heat dissipation chamber, a fin, an air guide element and a base, wherein the heat dissipation chamber is isolated from the outside, and both the fin and the air guide element are connected to the base; and the air guide element and the fin are in communication with the heat dissipation chamber through the base to dissipate heat from the inside of the heat dissipation chamber, wherein the heat dissipating chamber and the air guide element form a circulating heat dissipation channel, characterized in that the air guide element is composed of several parallel air guide pipes outside the heat dissipation chamber, the heat dissipation chamber comprises an air inlet cavity to the guide element and an air outlet cavity from the guide element, the air guide pipes are embedded into the fin and two ends of each of the air guide pipes are in communication with the heat dissipation chamber through the base.
A liquid supply unit configured to supply liquid and mountable to a liquid ejection device comprising a first liquid introducing part, a second liquid introducing part, a third liquid introducing part and a fourth liquid introducing part, the liquid supply unit comprising: a first wall comprising a first liquid supply section configured to be in contact with the first liquid introducing part, a second liquid supply section configured to be in contact with the second liquid introducing part, a third liquid supply section configured to be in contact with the third liquid introducing part and a fourth liquid supply section configured to be in contact with the fourth liquid introducing part; a second wall arranged to intersect with the first wall and configured to have a first portion and a second portion; a third wall arranged to intersect with the first wall and to be opposed to the second wall; and a contact part located on the second portion and allowed to be in electrically contact with the liquid ejection device, characterized by further comprising an engagement part located on the second portion and configured to engage with an engagement arm, the engagement arm being configured to be rotated and displaced to be engaged with the liquid supply unit, wherein a distance between the third wall and the first portion is greater than a distance between the third wall and the second portion in a plan view of the first wall in a first direction toward the first wall. a first wall comprising a first liquid supply section configured to be in contact with the first liquid introducing part, a second liquid supply section configured to be in contact with the second liquid introducing part, a third liquid supply section configured to be in contact with the third liquid introducing part and a fourth liquid supply section configured to be in contact with the fourth liquid introducing part; a second wall arranged to intersect with the first wall and configured to have a first portion and a second portion; a third wall arranged to intersect with the first wall and to be opposed to the second wall; and a contact part located on the second portion and allowed to be in electrically contact with the liquid ejection device, characterized by further comprising an engagement part located on the second portion and configured to engage with an engagement arm, the engagement arm being configured to be rotated and displaced to be engaged with the liquid supply unit, wherein a distance between the third wall and the first portion is greater than a distance between the third wall and the second portion in a plan view of the first wall in a first direction toward the first wall.
(Currently Amended) A system comprising: an object having a portion formed from a structured carbon nanotube engineered material having a structured CNT network, wherein a first plurality of CNTs are structured relative to one another or with respect to a substrate; a pair of electrode arrays and positioned on opposite sides of the structured CNT network wherein one of the electrode arrays includes a plurality of active electrode columns (322A, 324A) and the other electrode array includes a plurality of passive electrode rows (322B, 324B) defining a detection grid, a control system operationally coupled to the structured CNT network and configured or programmed to drive the structured CNT network with electrical energy to cause a voltage between a pair of respective active and passive electrodes; wherein the control system is configured to drive the structured CNT network with electrical energy to generate heat to increase or maintain a temperature of a substance associated with the object at or above the selected temperature; and detection system coupled to the structured CNT network for detecting a change in a physical property or characteristic related to the object based on a measurement of a change in electrical conductivity or resistivity of the structured CNT network based on the voltage, the change in the physical property or characteristic provides an indication of a change in a structural property or characteristic of the object. an object having a portion formed from a structured carbon nanotube engineered material having a structured CNT network, wherein a first plurality of CNTs are structured relative to one another or with respect to a substrate; a pair of electrode arrays and positioned on opposite sides of the structured CNT network wherein one of the electrode arrays includes a plurality of active electrode columns (322A, 324A) and the other electrode array includes a plurality of passive electrode rows (322B, 324B) defining a detection grid, a control system operationally coupled to the structured CNT network and configured or programmed to drive the structured CNT network with electrical energy to cause a voltage between a pair of respective active and passive electrodes; wherein the control system is configured to drive the structured CNT network with electrical energy to generate heat to increase or maintain a temperature of a substance associated with the object at or above the selected temperature; and detection system coupled to the structured CNT network for detecting a change in a physical property or characteristic related to the object based on a measurement of a change in electrical conductivity or resistivity of the structured CNT network based on the voltage, the change in the physical property or characteristic provides an indication of a change in a structural property or characteristic of the object.
An article of manufacture comprising a composition comprising an endothelin type B ET B receptor agonist, and instructional information directing the administration of said composition, for use together with a radiation therapy in the treatment of a tumor, characterized in that said ET B receptor agonist is IRL1620 (N-suc-[Glu 9, Ala 11,15] ET-1).