A method for forming a multi-level interconnect structure in a semiconductor device comprising: a first interconnection level including a first dielectric layer and a first conductive structure; a second interconnection level arranged above the first interconnection level and including a second dielectric layer and a second conductive structure; a third interconnection level arranged above the second interconnection level and including a third dielectric layer and a third conductive structure; wherein the method comprises: forming a trench in the third dielectric layer; providing a first sacrificial material in the trench; and thereafter forming a via extending through the third interconnection level to the second conductive structure; providing a second sacrificial material in the via; forming a multi-level via extending through the third interconnection level to the first conductive structure; removing the first sacrificial material; removing the second sacrificial material; depositing a conductive material at least partially filling: the trench, thereby forming the third conductive structure; the via, thereby forming a via structure forming an electrical connection between the third conductive structure and the second conductive structure; and the multi-level via, thereby forming a multi-level via structure forming an electrical connection between the third conductive structure and the first conductive structure. a first interconnection level including a first dielectric layer and a first conductive structure; a second interconnection level arranged above the first interconnection level and including a second dielectric layer and a second conductive structure; a third interconnection level arranged above the second interconnection level and including a third dielectric layer and a third conductive structure; wherein the method comprises: forming a trench in the third dielectric layer; providing a first sacrificial material in the trench; and thereafter forming a via extending through the third interconnection level to the second conductive structure; providing a second sacrificial material in the via; forming a multi-level via extending through the third interconnection level to the first conductive structure; removing the first sacrificial material; removing the second sacrificial material; depositing a conductive material at least partially filling: the trench, thereby forming the third conductive structure; the via, thereby forming a via structure forming an electrical connection between the third conductive structure and the second conductive structure; and the multi-level via, thereby forming a multi-level via structure forming an electrical connection between the third conductive structure and the first conductive structure. forming a trench in the third dielectric layer; providing a first sacrificial material in the trench; and thereafter forming a via extending through the third interconnection level to the second conductive structure; providing a second sacrificial material in the via; forming a multi-level via extending through the third interconnection level to the first conductive structure; removing the first sacrificial material; removing the second sacrificial material; depositing a conductive material at least partially filling: the trench, thereby forming the third conductive structure; the via, thereby forming a via structure forming an electrical connection between the third conductive structure and the second conductive structure; and the multi-level via, thereby forming a multi-level via structure forming an electrical connection between the third conductive structure and the first conductive structure. the trench, thereby forming the third conductive structure; the via, thereby forming a via structure forming an electrical connection between the third conductive structure and the second conductive structure; and the multi-level via, thereby forming a multi-level via structure forming an electrical connection between the third conductive structure and the first conductive structure.