EUV mirror comprising: a substrate and a multilayer arrangement applied on the substrate, which multilayer arrangement has a reflective effect for radiation having a wavelength A from the extreme ultraviolet range and comprises a multiplicity of layer pairs having alternating layers comprising a high refractive index layer material and a low refractive index layer material, wherein the multilayer arrangement has: a periodic first layer group having a first number N1 > 1 of first layer pairs, which are arranged in the vicinity of a radiation entrance side of the multilayer arrangement and have a first period thickness P1; a periodic second layer group having a second number N2 > 1 of second layer pairs, which are arranged between the first layer group and the substrate and have a second period thickness P2; a third layer group having a third number N3 of third layer pairs, which are arranged between the first layer group and the second layer group, wherein the first number N1 is greater than the second number N2; wherein the third layer group has a mean third period thickness P3 which deviates from an average period thickness P M = (P1 + P2)/2 by a period thickness difference ΔP, wherein the period thickness difference ΔP substantially corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of the third number N3 and cos(AOI M), wherein AOI M is the mean angle of incidence for which the multilayer arrangement is designed, wherein the condition ΔP = x*(λ/(N3 cos(AOI M))) holds true for the period thickness difference ΔP and wherein the condition 0.2 ≤ x ≤ 0.35 holds true, wherein the third layer group has no individual layer whose layer thickness is λ/(2*cos(AOI M)) or more. a substrate and a multilayer arrangement applied on the substrate, which multilayer arrangement has a reflective effect for radiation having a wavelength A from the extreme ultraviolet range and comprises a multiplicity of layer pairs having alternating layers comprising a high refractive index layer material and a low refractive index layer material, wherein the multilayer arrangement has: a periodic first layer group having a first number N1 > 1 of first layer pairs, which are arranged in the vicinity of a radiation entrance side of the multilayer arrangement and have a first period thickness P1; a periodic second layer group having a second number N2 > 1 of second layer pairs, which are arranged between the first layer group and the substrate and have a second period thickness P2; a third layer group having a third number N3 of third layer pairs, which are arranged between the first layer group and the second layer group, wherein the first number N1 is greater than the second number N2; wherein the third layer group has a mean third period thickness P3 which deviates from an average period thickness P M = (P1 + P2)/2 by a period thickness difference ΔP, wherein the period thickness difference ΔP substantially corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of the third number N3 and cos(AOI M), wherein AOI M is the mean angle of incidence for which the multilayer arrangement is designed, wherein the condition ΔP = x*(λ/(N3 cos(AOI M))) holds true for the period thickness difference ΔP and wherein the condition 0.2 ≤ x ≤ 0.35 holds true, wherein the third layer group has no individual layer whose layer thickness is λ/(2*cos(AOI M)) or more. a periodic first layer group having a first number N1 > 1 of first layer pairs, which are arranged in the vicinity of a radiation entrance side of the multilayer arrangement and have a first period thickness P1; a periodic second layer group having a second number N2 > 1 of second layer pairs, which are arranged between the first layer group and the substrate and have a second period thickness P2; a third layer group having a third number N3 of third layer pairs, which are arranged between the first layer group and the second layer group, wherein the first number N1 is greater than the second number N2; wherein the third layer group has a mean third period thickness P3 which deviates from an average period thickness P M = (P1 + P2)/2 by a period thickness difference ΔP, wherein the period thickness difference ΔP substantially corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of the third number N3 and cos(AOI M), wherein AOI M is the mean angle of incidence for which the multilayer arrangement is designed, wherein the condition ΔP = x*(λ/(N3 cos(AOI M))) holds true for the period thickness difference ΔP and wherein the condition 0.2 ≤ x ≤ 0.35 holds true, wherein the third layer group has no individual layer whose layer thickness is λ/(2*cos(AOI M)) or more.