An integrated circuit, comprising: a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons; at least one charge carrier storage region; and a charge carrier segregation structure comprising: a charge carrier travel region configured to receive the plurality of charge carriers from the photodetection region, the charge carrier travel region comprising a semiconductor material; and a plurality of electrodes, wherein the integrated circuit further comprises a control circuit configured to capture a charge carrier of the plurality of charge carriers arriving at the charge carrier travel region between a first time and a second time by: producing a first potential barrier at a first location within the charge carrier travel region by changing a voltage of a first electrode of the plurality of electrodes at the first time; and producing a second potential barrier at a second location within the charge carrier travel region by changing a voltage of a second electrode of the plurality of electrodes at the second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a location within the charge carrier travel region that depends on the time at which the charge carrier arrives at the charge carrier travel region, which in turn depends upon the time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region, and wherein the charge carrier segregation structure is configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced. a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons; at least one charge carrier storage region; and a charge carrier segregation structure comprising: a charge carrier travel region configured to receive the plurality of charge carriers from the photodetection region, the charge carrier travel region comprising a semiconductor material; and a plurality of electrodes, a charge carrier travel region configured to receive the plurality of charge carriers from the photodetection region, the charge carrier travel region comprising a semiconductor material; and a plurality of electrodes, wherein the integrated circuit further comprises a control circuit configured to capture a charge carrier of the plurality of charge carriers arriving at the charge carrier travel region between a first time and a second time by: producing a first potential barrier at a first location within the charge carrier travel region by changing a voltage of a first electrode of the plurality of electrodes at the first time; and producing a second potential barrier at a second location within the charge carrier travel region by changing a voltage of a second electrode of the plurality of electrodes at the second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a location within the charge carrier travel region that depends on the time at which the charge carrier arrives at the charge carrier travel region, which in turn depends upon the time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region, and producing a first potential barrier at a first location within the charge carrier travel region by changing a voltage of a first electrode of the plurality of electrodes at the first time; and producing a second potential barrier at a second location within the charge carrier travel region by changing a voltage of a second electrode of the plurality of electrodes at the second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a location within the charge carrier travel region that depends on the time at which the charge carrier arrives at the charge carrier travel region, which in turn depends upon the time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region, and wherein the charge carrier segregation structure is configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.