A pressure contact type semiconductor device stack comprising pressure contact type semiconductor devices each composed of a multi-chip semiconductor device in which a plurality of chips are arranged on the same plane, heat sinks which are to be arranged on both surfaces of the pressure contact type semiconductor device, the pressure contact type semiconductor devices and the heat sinks being alternately stacked, and pressurizing means (30, 30a, 30b) for pressurizing the pressure contact type semiconductor devices and the heat sinks so that a pressure contact force between the pressure contact type semiconductor device and the heat sink which have been stacked becomes a prescribed pressure contact force, wherein the pressurizing means (30, 30a, 30b) includes pressurizing bodies (6a, 6b) arranged on an upper surface and a lower surface of the pressure contact type semiconductor devices and the heat sinks which have been stacked, metal fittings (7a, 7b) for insulating plate each distributing a pressure applied by the pressuring body (6a, 6b)to an outer circumferential surface, and insulating plates (8a, 8b), each of which is arranged between a pressurizing surface of the metal fitting (7a, 7b) for insulating plate and the heat sink arranged the nearest to the pressurizing surface of the relevant metal fitting (7a, 7b) for insulating plate, and pressurizes the relevant heat sink by a pressure applied to the pressuring surface of the relevant metal fitting (7a, 7b) for insulating plate; the pressure contact type semiconductor device stack is characterized in that: the pressure contact type semiconductor device has a collector post surface at one side that is a pressure contact surface, an emitter post surface at the other side arranged opposite to the collector post surface, and a notch portion at a part of a peripheral portion of a post surface of any one of the collector post surface or the emitter post surface; and when the chips composing the pressure contact type semiconductor device are arranged between the collector post surface and the emitter post surface in parallel with the pressure contact surface, and a distance (Lc) from the collector post surface to a front surface of the chip and a distance (Le) from the emitter post surface to a back surface of the chip are different, means is further provided for making a distance from the pressurizing surface of the metal fitting for insulating plate pressurized by the upper surface pressurizing body to a front surface of the chip of the pressure contact type semiconductor device arranged the nearest to the pressurizing surface, equal to a distance (L3, L4, L5) from the pressurizing surface of the metal fitting for insulating plate pressurized by the lower surface pressurizing body to a back surface of the chip of the pressure contact type semiconductor device arranged the nearest to the pressurizing surface. the pressure contact type semiconductor device has a collector post surface at one side that is a pressure contact surface, an emitter post surface at the other side arranged opposite to the collector post surface, and a notch portion at a part of a peripheral portion of a post surface of any one of the collector post surface or the emitter post surface; and when the chips composing the pressure contact type semiconductor device are arranged between the collector post surface and the emitter post surface in parallel with the pressure contact surface, and a distance (Lc) from the collector post surface to a front surface of the chip and a distance (Le) from the emitter post surface to a back surface of the chip are different, means is further provided for making a distance from the pressurizing surface of the metal fitting for insulating plate pressurized by the upper surface pressurizing body to a front surface of the chip of the pressure contact type semiconductor device arranged the nearest to the pressurizing surface, equal to a distance (L3, L4, L5) from the pressurizing surface of the metal fitting for insulating plate pressurized by the lower surface pressurizing body to a back surface of the chip of the pressure contact type semiconductor device arranged the nearest to the pressurizing surface.