A chemical vapor deposition based process for making an organosilicate glass film having a dielectric constant of 4.0 or less, the process comprising: providing a mixture that is one selected from the following: a mixture (i) comprising a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds per Si atom, from 0 to 1 of a bond selected from the group consisting of Si-H, Si-Br, or Si-CI bonds per Si atom, and no Si-C bonds, and a second silicon-containing precursor that comprises at least one Si-C bond per Si atom, provided that mixture (i) does not consist of diethoxymethylsilane, tetraethoxysilane and a porogen precursor and provided that mixture (i) does not consist of di-tert-butoxy-diacetoxysilane, di-tert-butoxymethylsilane and a porogen precursor; and a mixture (ii) comprising an asymmetric silicon-containing precursor which contains Si-C and Si-O bonds and has a number ratio of Si-C bonds to Si atoms that is less than 1, provided that the asymmetric silicon-containing precursor is not 1,3-diethoxy-1-neo-hexyldisiloxane, 1,2-diethoxy-1-neo-hexyldisilane, 1,3-diacetoxy-1-neo-hexyldisiloxane, 1,2-diacetoxy-1-neo-hexyldisilane, 1-acetoxy-3,3-di-t-butoxy-1-neohexyldisiloxane, 1-acetoxy-2,2-di-t-butoxy-1-neohexyldisilane, 1,3-diacetoxy-1,3-di-t-butoxy-1-neohexyldisiloxane, or 1,2-diacetoxy-1,2-di-t-butoxy-1-neohexyldisilane; introducing the mixture into a reaction chamber having a substrate contained therein; and applying energy to the mixture in the reaction chamber to induce reaction and deposit the organosilicate glass film on the substrate. providing a mixture that is one selected from the following: a mixture (i) comprising a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds per Si atom, from 0 to 1 of a bond selected from the group consisting of Si-H, Si-Br, or Si-CI bonds per Si atom, and no Si-C bonds, and a second silicon-containing precursor that comprises at least one Si-C bond per Si atom, provided that mixture (i) does not consist of diethoxymethylsilane, tetraethoxysilane and a porogen precursor and provided that mixture (i) does not consist of di-tert-butoxy-diacetoxysilane, di-tert-butoxymethylsilane and a porogen precursor; and a mixture (i) comprising a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds per Si atom, from 0 to 1 of a bond selected from the group consisting of Si-H, Si-Br, or Si-CI bonds per Si atom, and no Si-C bonds, and a second silicon-containing precursor that comprises at least one Si-C bond per Si atom, provided that mixture (i) does not consist of diethoxymethylsilane, tetraethoxysilane and a porogen precursor and provided that mixture (i) does not consist of di-tert-butoxy-diacetoxysilane, di-tert-butoxymethylsilane and a porogen precursor; and a first silicon-containing precursor that comprises from 3 to 4 Si-O bonds per Si atom, from 0 to 1 of a bond selected from the group consisting of Si-H, Si-Br, or Si-CI bonds per Si atom, and no Si-C bonds, and a second silicon-containing precursor that comprises at least one Si-C bond per Si atom, provided that mixture (i) does not consist of diethoxymethylsilane, tetraethoxysilane and a porogen precursor and provided that mixture (i) does not consist of di-tert-butoxy-diacetoxysilane, di-tert-butoxymethylsilane and a porogen precursor; and a mixture (ii) comprising an asymmetric silicon-containing precursor which contains Si-C and Si-O bonds and has a number ratio of Si-C bonds to Si atoms that is less than 1, provided that the asymmetric silicon-containing precursor is not 1,3-diethoxy-1-neo-hexyldisiloxane, 1,2-diethoxy-1-neo-hexyldisilane, 1,3-diacetoxy-1-neo-hexyldisiloxane, 1,2-diacetoxy-1-neo-hexyldisilane, 1-acetoxy-3,3-di-t-butoxy-1-neohexyldisiloxane, 1-acetoxy-2,2-di-t-butoxy-1-neohexyldisilane, 1,3-diacetoxy-1,3-di-t-butoxy-1-neohexyldisiloxane, or 1,2-diacetoxy-1,2-di-t-butoxy-1-neohexyldisilane; an asymmetric silicon-containing precursor which contains Si-C and Si-O bonds and has a number ratio of Si-C bonds to Si atoms that is less than 1, provided that the asymmetric silicon-containing precursor is not 1,3-diethoxy-1-neo-hexyldisiloxane, 1,2-diethoxy-1-neo-hexyldisilane, 1,3-diacetoxy-1-neo-hexyldisiloxane, 1,2-diacetoxy-1-neo-hexyldisilane, 1-acetoxy-3,3-di-t-butoxy-1-neohexyldisiloxane, 1-acetoxy-2,2-di-t-butoxy-1-neohexyldisilane, 1,3-diacetoxy-1,3-di-t-butoxy-1-neohexyldisiloxane, or 1,2-diacetoxy-1,2-di-t-butoxy-1-neohexyldisilane; introducing the mixture into a reaction chamber having a substrate contained therein; and applying energy to the mixture in the reaction chamber to induce reaction and deposit the organosilicate glass film on the substrate.