A semiconductor device comprising: a first conductor layer (32, 132, 232, 332, 432) configured to be connected to a first terminal of a power source, the first terminal having a first polarity; an electric current regulation layer (42, 142, 242, 342, 442) made of an insulating material and covering a part of a surface of the first conductor layer (32, 132, 232, 332, 432) and leaving a non-covered surface (55, 155, 255, 355, 455) at the surface of the first conductor layer (32, 132, 232, 332, 432); a semiconductor layer (50, 350, 450) covering a surface of the electric current regulation layer (42, 142, 242, 342, 442); a conducting region connecting the semiconductor layer (50, 350, 450) to the first conductor layer (32, 132, 232, 332, 432) at the non-covered surface (55, 155, 255, 355, 455); and a second conductor layer (62, 162, 262, 362, 462) formed at a surface of the semiconductor layer (50, 350, 450), the second conductor layer (62, 162, 262, 362, 462) being located at a position separated laterally from the non-covered surface (55, 155, 255, 355, 455), the second conductor layer (62, 162, 262, 362, 462) being configured to be connected to a second terminal of the power source, the second terminal having a second polarity; wherein a semiconductor structure is formed exclusively within the semiconductor layer (50, 350, 450), the semiconductor structure is configured to perform a specific operation when a portion of the semiconductor layer (50, 350, 450) close to the non-covered surface (55, 155, 255, 355, 455) is connected to the first polarity of the power source through the conducting region and the first conductor layer (32, 132, 232, 332, 432), and a portion of the semiconductor layer (50, 350, 450) close to the second conductor layer (62, 162, 262, 362, 462) is connected to the second polarity of the power source through the second conductor layer (62, 162, 262, 362, 462) characterized by the first conductor layer (32, 132, 232, 332, 432) being made of a conductive metal and an approximately orthogonal relationship being obtained between the direction of the electrical field within the semiconductor layer (50, 350, 450) and the direction in which crystal defects extend within the semiconductor layer (50, 350, 450) when an electric current does not flow between the first conductor layer (32, 132, 232, 332, 432) and the second conductor layer (62, 162, 262, 362, 462) and the first conductor layer is connected to the first polarity of the power source and the second conductor layer is connected to the second polarity of the power source. a first conductor layer (32, 132, 232, 332, 432) configured to be connected to a first terminal of a power source, the first terminal having a first polarity; an electric current regulation layer (42, 142, 242, 342, 442) made of an insulating material and covering a part of a surface of the first conductor layer (32, 132, 232, 332, 432) and leaving a non-covered surface (55, 155, 255, 355, 455) at the surface of the first conductor layer (32, 132, 232, 332, 432); a semiconductor layer (50, 350, 450) covering a surface of the electric current regulation layer (42, 142, 242, 342, 442); a conducting region connecting the semiconductor layer (50, 350, 450) to the first conductor layer (32, 132, 232, 332, 432) at the non-covered surface (55, 155, 255, 355, 455); and a second conductor layer (62, 162, 262, 362, 462) formed at a surface of the semiconductor layer (50, 350, 450), the second conductor layer (62, 162, 262, 362, 462) being located at a position separated laterally from the non-covered surface (55, 155, 255, 355, 455), the second conductor layer (62, 162, 262, 362, 462) being configured to be connected to a second terminal of the power source, the second terminal having a second polarity; wherein a semiconductor structure is formed exclusively within the semiconductor layer (50, 350, 450), the semiconductor structure is configured to perform a specific operation when a portion of the semiconductor layer (50, 350, 450) close to the non-covered surface (55, 155, 255, 355, 455) is connected to the first polarity of the power source through the conducting region and the first conductor layer (32, 132, 232, 332, 432), and a portion of the semiconductor layer (50, 350, 450) close to the second conductor layer (62, 162, 262, 362, 462) is connected to the second polarity of the power source through the second conductor layer (62, 162, 262, 362, 462) characterized by the first conductor layer (32, 132, 232, 332, 432) being made of a conductive metal and an approximately orthogonal relationship being obtained between the direction of the electrical field within the semiconductor layer (50, 350, 450) and the direction in which crystal defects extend within the semiconductor layer (50, 350, 450) when an electric current does not flow between the first conductor layer (32, 132, 232, 332, 432) and the second conductor layer (62, 162, 262, 362, 462) and the first conductor layer is connected to the first polarity of the power source and the second conductor layer is connected to the second polarity of the power source.