A light emitting diode comprising: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a light extraction structure including a first light extraction zone and a second light extraction zone, wherein a period of first concave and/or convex structures of the first light extraction zone is different from a period of second concave and/or convex structures of the second light extraction zone, wherein each of the first light extraction zone and the second light extraction zone comprises a pattern having respectively different periods which diffract respectively different propagation modes, and wherein the light extraction structure is formed in the first conductivity type semiconductor layer, and wherein the first light extraction zone and the second light extraction zone are disposed on the same top surface of the first conductivity type semiconductor layer, characterised in that the length of the first light extraction zone is similar to an effective propagation distance of a propagation mode diffracted by a pattern having the period of the first concave and/or convex structures of the first light extraction zone, and the length of the second light extraction zone is similar to an effective propagation distance of a propagation mode diffracted by a pattern having the period of the second concave and/or convex structures of the second light extraction zone in the light emitting diode. a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a light extraction structure including a first light extraction zone and a second light extraction zone, wherein a period of first concave and/or convex structures of the first light extraction zone is different from a period of second concave and/or convex structures of the second light extraction zone, wherein each of the first light extraction zone and the second light extraction zone comprises a pattern having respectively different periods which diffract respectively different propagation modes, and wherein the light extraction structure is formed in the first conductivity type semiconductor layer, and wherein the first light extraction zone and the second light extraction zone are disposed on the same top surface of the first conductivity type semiconductor layer, characterised in that the length of the first light extraction zone is similar to an effective propagation distance of a propagation mode diffracted by a pattern having the period of the first concave and/or convex structures of the first light extraction zone, and the length of the second light extraction zone is similar to an effective propagation distance of a propagation mode diffracted by a pattern having the period of the second concave and/or convex structures of the second light extraction zone in the light emitting diode.