mhurhangee/ep-ind-claims huggingface dataset:
A medical cooling system for use in association with a fluid distribution network, the fluid distribution network having a plurality of fluid outlets in communication with a central fluid source, the medical cooling system comprising: a fluid conditioning subsystem including: a fluid delivery conduit defining an inlet engageable with one of the fluid outlets of the fluid distribution network; a compressor in fluid communication with the fluid delivery conduit; an adsorbent material disposed in the fluid delivery conduit; and a subcooler in thermal communication with the fluid delivery conduit; the medical cooling system further comprising a fluid delivery subsystem being adapted to selectively control the circulation and/or delivery of fluid received from the fluid conditioning subsystem to a medical device and comprising: a first reservoir for the storage of conditioned fluid received from the fluid conditioning subsystem, a supply lumen, an exhaust lumen and a connector; the fluid delivery subsystem being adapted to be coupled to the medical device through said connector, wherein said connector is adpted to place said supply lumen and said exhaust lumen of the fluid delivery subsystem in fluid communication with a fluid injection tube and an exhaust lumen of the medical device, the medical fluid conditioning subsystem being upstream of the fluid delivery subsystem and downstream of the fluid distribution network. a fluid delivery conduit defining an inlet engageable with one of the fluid outlets of the fluid distribution network; a compressor in fluid communication with the fluid delivery conduit; an adsorbent material disposed in the fluid delivery conduit; and a subcooler in thermal communication with the fluid delivery conduit; the medical cooling system further comprising a fluid delivery subsystem being adapted to selectively control the circulation and/or delivery of fluid received from the fluid conditioning subsystem to a medical device and comprising: a first reservoir for the storage of conditioned fluid received from the fluid conditioning subsystem, a supply lumen, an exhaust lumen and a connector; the fluid delivery subsystem being adapted to be coupled to the medical device through said connector, wherein said connector is adpted to place said supply lumen and said exhaust lumen of the fluid delivery subsystem in fluid communication with a fluid injection tube and an exhaust lumen of the medical device, the medical fluid conditioning subsystem being upstream of the fluid delivery subsystem and downstream of the fluid distribution network.
A lithographic apparatus, comprising: a projection system configured to project a patterned beam onto a target portion of a substrate; a barrier member surrounding the projection system and comprising a liquid inlet port configured to supply immersion liquid to a space between the substrate and the projection system; and a substrate table configured to hold the substrate, the substrate table movable relative to the liquid inlet port, characterised in that the substrate table comprises: a first outlet at the edge of the substrate, the first outlet configured to remove at least part of the immersion liquid; a sensor located at a top side of the substrate table and located radially outward of the first outlet; and a second outlet, located radially outward of the first outlet and located in a top surface of the substrate table, the second outlet configured to remove at least part of the immersion liquid. a projection system configured to project a patterned beam onto a target portion of a substrate; a barrier member surrounding the projection system and comprising a liquid inlet port configured to supply immersion liquid to a space between the substrate and the projection system; and a substrate table configured to hold the substrate, the substrate table movable relative to the liquid inlet port, characterised in that the substrate table comprises: a first outlet at the edge of the substrate, the first outlet configured to remove at least part of the immersion liquid; a sensor located at a top side of the substrate table and located radially outward of the first outlet; and a second outlet, located radially outward of the first outlet and located in a top surface of the substrate table, the second outlet configured to remove at least part of the immersion liquid. a first outlet at the edge of the substrate, the first outlet configured to remove at least part of the immersion liquid; a sensor located at a top side of the substrate table and located radially outward of the first outlet; and a second outlet, located radially outward of the first outlet and located in a top surface of the substrate table, the second outlet configured to remove at least part of the immersion liquid.
A molding screw for use in a free blend injection molding machine, the molding screw comprising: a feeding portion configured to feed a molding material that includes a mixture material, a resin powder, and an additive; and a compressing portion and a metering portion that extend continuously from the feeding portion, wherein a spiral flight is formed in each of the feeding portion and the compressing portion, and the metering portion is provided with a plurality of blending/aligning portions each having gear-like protrusions and recessions in a circumferential direction about the screw axis, characterized in that the flight of the compressing portion includes a plurality of sub flights that extend in a spiral manner in a screw axis direction,the sub flights each have a polygonal shape with rounded corner portions, the sub flights are arranged such that the corner portions are shifted by a set angle with respect to a screw axis, and the sub flights are formed such that gaps between a cylinder inner surface and the corner portions are smallest and gaps between the cylinder inner surface and central portions between the corner portions are largest. a feeding portion configured to feed a molding material that includes a mixture material, a resin powder, and an additive; and a compressing portion and a metering portion that extend continuously from the feeding portion, wherein a spiral flight is formed in each of the feeding portion and the compressing portion, and the metering portion is provided with a plurality of blending/aligning portions each having gear-like protrusions and recessions in a circumferential direction about the screw axis, characterized in that the flight of the compressing portion includes a plurality of sub flights that extend in a spiral manner in a screw axis direction,the sub flights each have a polygonal shape with rounded corner portions, the sub flights are arranged such that the corner portions are shifted by a set angle with respect to a screw axis, and the sub flights are formed such that gaps between a cylinder inner surface and the corner portions are smallest and gaps between the cylinder inner surface and central portions between the corner portions are largest.
An imaging sensor for accepting terahertz signals, comprising: a die made of a dielectric material; one or more antennas for receiving terahertz signals, positioned on top of the die or in an upper layer of the die; each antenna having a CMOS detector electrically coupled to the antenna by a pair of via connectors and positioned in the die below the antenna; a metal shield layer in the die below the antennas and above the CMOS detectors, configured to shield the CMOS detector from interference signals; said shield layer in the area of said via connectors being cut out so that the via connectors only contact the dielectric material; characterised by further comprising: a shielding layer under the die comprising a metal coating and a layer of silver epoxy glue for attaching the bottom of the die to a lead frame. a die made of a dielectric material; one or more antennas for receiving terahertz signals, positioned on top of the die or in an upper layer of the die; each antenna having a CMOS detector electrically coupled to the antenna by a pair of via connectors and positioned in the die below the antenna; a metal shield layer in the die below the antennas and above the CMOS detectors, configured to shield the CMOS detector from interference signals; said shield layer in the area of said via connectors being cut out so that the via connectors only contact the dielectric material; characterised by further comprising: a shielding layer under the die comprising a metal coating and a layer of silver epoxy glue for attaching the bottom of the die to a lead frame.
A bearing element for carrying axial loads, the bearing element having an annular shape and comprising a first end surface, which is configured to be supported against an object that is stationary in relation to the bearing element, and a second end surface, which is configured to support a part rotating in relation to and coaxially with the bearing element, characterized in that the second end surface is provided with a concave portion, which runs along the circumference of the bearing element over the whole second end surface and that the depth of the concave portion is 0.005 to 0.05 mm in the middle of the concave portion.
A method of simultaneously forming an infrared bandpass filter on a filter side and interconnection levels on an interconnect side of an image sensor, comprising the steps, in the following order, of: a) forming a first layer of a dielectric material having a refraction index smaller than 2.5 at the maximum transmission wavelength of the filter on a semiconductor substrate; b) depositing an etch stop layer; c) depositing at least one silicon layer having a first thickness; d) removing, on the interconnect side, said at least one silicon layer; e) depositing a second layer of the dielectric material having a second thickness greater than the first thickness; f) forming in the second layer metal tracks and interconnection vias, on the interconnect side; g) planarizing the surface to a level corresponding to the level (7-1, 8-1) of the surface of the second layer, where the second layer does not cover said at least one silicon layer; and h) repeating steps b) to g) at least once, the values of the first and second thicknesses being selected from one repetition to another, according to calculations implying a simulation step and/or according to the desired electric performances, the first thicknesses being selected to form a bandpass filter with the desired properties in function of the second thicknesses selected to obtain desired electric performances regarding interlevel parasitic capacitances. a) forming a first layer of a dielectric material having a refraction index smaller than 2.5 at the maximum transmission wavelength of the filter on a semiconductor substrate; b) depositing an etch stop layer; c) depositing at least one silicon layer having a first thickness; d) removing, on the interconnect side, said at least one silicon layer; e) depositing a second layer of the dielectric material having a second thickness greater than the first thickness; f) forming in the second layer metal tracks and interconnection vias, on the interconnect side; g) planarizing the surface to a level corresponding to the level (7-1, 8-1) of the surface of the second layer, where the second layer does not cover said at least one silicon layer; and h) repeating steps b) to g) at least once, the values of the first and second thicknesses being selected from one repetition to another, according to calculations implying a simulation step and/or according to the desired electric performances, the first thicknesses being selected to form a bandpass filter with the desired properties in function of the second thicknesses selected to obtain desired electric performances regarding interlevel parasitic capacitances.
A system comprising a device for treating water and a smartphone, wherein the device for treating water comprises a jug having a water collection cavity which includes a funnel for inserting a filter cartridge and a spout for pouring out water; and comprising the filter cartridge, wherein the device comprises a counting device for indicating a required replacement of the filter cartridge, which counting device is accommodated in the lid of the jug; wherein the counting device includes means for wireless transmission, which allow to present an indication of a required replacement of the filter cartridge on the display of a smartphone, wherein the counting device cooperates with a timer, with a means for counting the amount of treated water and/or with a closing element, wherein the means for wireless transmission are integrated in an electronic module which likewise comprises a display for indicating the remaining service life of the filter cartridge; and wherein the counting device cooperates with a module of the smartphone for position determination; and wherein the device for treating water comprises means for establishing a connection to the smartphone only temporarily; and wherein the smartphone comprises means for putting the counting device to a sleep mode during which further counting is stopped. which includes a funnel for inserting a filter cartridge and a spout for pouring out water; and comprising the filter cartridge, wherein the device comprises a counting device for indicating a required replacement of the filter cartridge, which counting device is accommodated in the lid of the jug; wherein the counting device includes means for wireless transmission, which allow to present an indication of a required replacement of the filter cartridge on the display of a smartphone, wherein the counting device cooperates with a timer, with a means for counting the amount of treated water and/or with a closing element, wherein the means for wireless transmission are integrated in an electronic module which likewise comprises a display for indicating the remaining service life of the filter cartridge; and wherein the counting device cooperates with a module of the smartphone for position determination; and wherein the device for treating water comprises means for establishing a connection to the smartphone only temporarily; and wherein the smartphone comprises means for putting the counting device to a sleep mode during which further counting is stopped.
A computer-implemented method for detecting illegitimate applications, at least a portion of the method being performed by a computing device comprising at least one processor, the method comprising: identifying an installation of an application on a computing system; determining, in response to identifying the installation of the application, that at least one previously existing system file with privileged access on the computing system was unexpectedly changed prior to the installation of the application, wherein the privileged access comprises an access level that may enable installation of illegitimate applications; determining that the application is illegitimate based at least in part on the application being installed after the system file with privileged access was changed; and performing a remediation action on the application in response to determining that the application is illegitimate. identifying an installation of an application on a computing system; determining, in response to identifying the installation of the application, that at least one previously existing system file with privileged access on the computing system was unexpectedly changed prior to the installation of the application, wherein the privileged access comprises an access level that may enable installation of illegitimate applications; determining that the application is illegitimate based at least in part on the application being installed after the system file with privileged access was changed; and performing a remediation action on the application in response to determining that the application is illegitimate.
A method of manufacturing a semiconductor device, the method comprising: forming an initial buffer layer on a silicon substrate; forming a transition layer on the initial buffer layer; and forming a device layer on the transition layer, wherein the forming of the initial buffer layer comprises: heating the silicon substrate to a first temperature in a chamber; reducing an internal temperature of the chamber to a second temperature, the second temperature being lower than the first temperature; forming an ultrathin Al film directly on the silicon substrate by flowing a first gas comprising Al in the chamber at the second temperature for a third predetermined period while a second gas comprising nitrogen is not supplied into the chamber, the second temperature being 750°C to 850°C; and flowing the second gas together with the first gas for a fourth predetermined period at which the internal temperature of the chamber is increased to a third temperature that is higher than the second temperature, after the third predetermined period elapses. forming an initial buffer layer on a silicon substrate; forming a transition layer on the initial buffer layer; and forming a device layer on the transition layer, wherein the forming of the initial buffer layer comprises: heating the silicon substrate to a first temperature in a chamber; reducing an internal temperature of the chamber to a second temperature, the second temperature being lower than the first temperature; forming an ultrathin Al film directly on the silicon substrate by flowing a first gas comprising Al in the chamber at the second temperature for a third predetermined period while a second gas comprising nitrogen is not supplied into the chamber, the second temperature being 750°C to 850°C; and flowing the second gas together with the first gas for a fourth predetermined period at which the internal temperature of the chamber is increased to a third temperature that is higher than the second temperature, after the third predetermined period elapses. heating the silicon substrate to a first temperature in a chamber; reducing an internal temperature of the chamber to a second temperature, the second temperature being lower than the first temperature; forming an ultrathin Al film directly on the silicon substrate by flowing a first gas comprising Al in the chamber at the second temperature for a third predetermined period while a second gas comprising nitrogen is not supplied into the chamber, the second temperature being 750°C to 850°C; and flowing the second gas together with the first gas for a fourth predetermined period at which the internal temperature of the chamber is increased to a third temperature that is higher than the second temperature, after the third predetermined period elapses.
A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate, the second substrate having at least one reaction layer, with the following sequence: - receiving the substrates (1, 2) into a plasma chamber (20,20') or into a substrate chamber which is connected to a plasma chamber (20"), the plasma chamber (20, 20', 20") having at least two generators (23, 24) which can be operated with different frequencies (f 21, f 22), especially are operated with different frequencies (f 21, f 22) for producing the plasma, - formation of a reservoir in a reservoir formation layer on the first contact area by applying a plasma which has been produced in the plasma chamber (20,20', 20") to the first contact area, - at least partial filling of the reservoir with a first educt or a first group of educts, - making contact of the first contact area with the second contact area for formation of a pre-bond interconnection, - formation of a permanent bond between the first and second contact area (3, 4) at least partially strengthened by the reaction of the first educt with a second educt which is contained in a reaction layer of the second substrate. - receiving the substrates (1, 2) into a plasma chamber (20,20') or into a substrate chamber which is connected to a plasma chamber (20"), the plasma chamber (20, 20', 20") having at least two generators (23, 24) which can be operated with different frequencies (f 21, f 22), especially are operated with different frequencies (f 21, f 22) for producing the plasma, - formation of a reservoir in a reservoir formation layer on the first contact area by applying a plasma which has been produced in the plasma chamber (20,20', 20") to the first contact area, - at least partial filling of the reservoir with a first educt or a first group of educts, - making contact of the first contact area with the second contact area for formation of a pre-bond interconnection, - formation of a permanent bond between the first and second contact area (3, 4) at least partially strengthened by the reaction of the first educt with a second educt which is contained in a reaction layer of the second substrate.
An apparatus for utilizing radiation pressure provided by a light wave to generate mechanical work, said apparatus comprising: a collector configured to collect light waves from an external source; a containment chamber constructed to receive collected light waves and contain the propagation of light waves therein along a predetermined reflected light wave path; a receiving prism positioned adjacent said containment chamber and positioned to receive a light wave from the collector prior to introduction of the light wave into said containment chamber; a first reflective mirror positioned at one end of said containment chamber, said first reflective mirror having a first reflective surface and being moveable along a predetermined mirror path; and a second reflective mirror having a second reflective surface positioned at a second end of said containment chamber, wherein the predetermined light wave path extends between said first and second reflective surfaces and wherein repeated contact of the light wave against the first reflective surface allows radiation pressure repeatedly acting upon the first reflective surface to cause the first reflective mirror to travel along the predetermined mirror path, thereby generating mechanical work. a collector configured to collect light waves from an external source; a containment chamber constructed to receive collected light waves and contain the propagation of light waves therein along a predetermined reflected light wave path; a receiving prism positioned adjacent said containment chamber and positioned to receive a light wave from the collector prior to introduction of the light wave into said containment chamber; a first reflective mirror positioned at one end of said containment chamber, said first reflective mirror having a first reflective surface and being moveable along a predetermined mirror path; and a second reflective mirror having a second reflective surface positioned at a second end of said containment chamber, wherein the predetermined light wave path extends between said first and second reflective surfaces and wherein repeated contact of the light wave against the first reflective surface allows radiation pressure repeatedly acting upon the first reflective surface to cause the first reflective mirror to travel along the predetermined mirror path, thereby generating mechanical work.