A quantum information processing circuit comprising: a dielectric substrate; and a lumped-element device on the dielectric substrate, the lumped-element device comprising: a first capacitor pad on the dielectric substrate, the first capacitor pad being capacitively coupled to a second capacitor pad, the first capacitor pad having an outer boundary and an inner boundary, the inner boundary defining an interior clearance area in the first capacitor pad, the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad, the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad; and an inductive transmission line on the dielectric substrate, residing in the interior clearance area in, and being surrounded by, the first capacitor pad, wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad; wherein the first capacitor pad is a closed conductive surface surrounding the meander inductor except for an opening through which a second end of the inductive transmission line extends to connect to the second capacitor pad. a dielectric substrate; and a lumped-element device on the dielectric substrate, the lumped-element device comprising: a first capacitor pad on the dielectric substrate, the first capacitor pad being capacitively coupled to a second capacitor pad, the first capacitor pad having an outer boundary and an inner boundary, the inner boundary defining an interior clearance area in the first capacitor pad, the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad, the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad; and an inductive transmission line on the dielectric substrate, residing in the interior clearance area in, and being surrounded by, the first capacitor pad, wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad; a first capacitor pad on the dielectric substrate, the first capacitor pad being capacitively coupled to a second capacitor pad, the first capacitor pad having an outer boundary and an inner boundary, the inner boundary defining an interior clearance area in the first capacitor pad, the outer boundary of the first capacitor pad nested within an inner boundary of the second capacitor pad, the inner boundary of the second capacitor pad extends along all edges of the outer boundary of the first capacitor pad; and an inductive transmission line on the dielectric substrate, residing in the interior clearance area in, and being surrounded by, the first capacitor pad, wherein the inductive transmission line comprises a meander inductor that has a first end connected to the inner boundary of the first capacitor pad; wherein the first capacitor pad is a closed conductive surface surrounding the meander inductor except for an opening through which a second end of the inductive transmission line extends to connect to the second capacitor pad.