A method of forming a microelectronic assembly having a plurality of metal contact pads (110; 302, 1204) and at least one through substrate via, TSV, the method comprising: providing a first TSV in a first substrate having a first bonding surface, the first TSV normal to the first bonding surface; forming a first metal contact pad (302, 1204) in the first bonding surface, the first metal contact pad electrically coupled to the first TSV, the first metal contact pad extending partially into the first substrate below the first bonding surface and aligned with the first TSV in the direction from the first bonding surface through the first substrate; forming a second metal contact pad in the first bonding surface, wherein no TSV is disposed under the second metal contact pad in the direction from the first bonding surface through the first substrate, the first metal contact pad having a larger surface area than a surface area of the second metal contact pad; and planarizing the first bonding surface to have a surface variance less than or equal to a maximum surface variance for direct bonding; wherein the larger surface area of the first metal contact pad and the surface area of the second metal pad are dimensioned to cause, during the planarization, a first recess of the first metal contact pad relative to the first bonding surface and a second recess of the second metal contact pad relative to the first bonding surface, the first recess being greater than the second recess by a predetermined amount suitable for compensating, during direct bonding, for thermal expansion of the first TSV, the first metal contact pad and the second metal contact pad relative to the first bonding surface. providing a first TSV in a first substrate having a first bonding surface, the first TSV normal to the first bonding surface; forming a first metal contact pad (302, 1204) in the first bonding surface, the first metal contact pad electrically coupled to the first TSV, the first metal contact pad extending partially into the first substrate below the first bonding surface and aligned with the first TSV in the direction from the first bonding surface through the first substrate; forming a second metal contact pad in the first bonding surface, wherein no TSV is disposed under the second metal contact pad in the direction from the first bonding surface through the first substrate, the first metal contact pad having a larger surface area than a surface area of the second metal contact pad; and planarizing the first bonding surface to have a surface variance less than or equal to a maximum surface variance for direct bonding; wherein the larger surface area of the first metal contact pad and the surface area of the second metal pad are dimensioned to cause, during the planarization, a first recess of the first metal contact pad relative to the first bonding surface and a second recess of the second metal contact pad relative to the first bonding surface, the first recess being greater than the second recess by a predetermined amount suitable for compensating, during direct bonding, for thermal expansion of the first TSV, the first metal contact pad and the second metal contact pad relative to the first bonding surface.