A light emitting device (100, 200, 210) comprising: a substrate; and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, each columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a laminated direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form, a regular triangular lattice form, or rectangular lattice form, an adjacent columnar portion is a columnar portion at the shortest distance between centres, and a line (L1, L2) passing through centers ( Ca, Cb, Cc, Cd) of the adjacent columnar portions is inclined relative to m-planes (31a, 32a, 32c, 31b) of the columnar portions located between the centers (Ca, Cb, Cc, Cd) of the adjacent columnar portions, vertices of the adjacent columnar portions are not placed on the line (L1, L2), the plurality of columnar portions each includes a first semiconductor layer that is n-type, a second semiconductor layer that is p-type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the m-planes (31a, 32a, 32c, 31b) are side surfaces of the columnar portions respectively, and each of the side surfaces is formed by the first semiconductor layer, second semiconductor layer, and the light emitting layer, characterised in that in the plan view as seen from the laminated direction, the line (L1, L2) is inclined at from 8 degrees to 22 degrees relative to perpendiculars (Pa, Pb, Qa, Qc) of the m-planes (31a, 31b, 32a, 32c), or in that the plurality of columnar portions are arranged in the regular triangular lattice form, wherein in the plan view as seen from the laminated direction, the line is inclined at from 38 degrees to 52 degrees relative to a perpendicular of an m-plane connected to the m-plane in a clockwise direction. a substrate; and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, each columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a laminated direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form, a regular triangular lattice form, or rectangular lattice form, an adjacent columnar portion is a columnar portion at the shortest distance between centres, and a line (L1, L2) passing through centers ( Ca, Cb, Cc, Cd) of the adjacent columnar portions is inclined relative to m-planes (31a, 32a, 32c, 31b) of the columnar portions located between the centers (Ca, Cb, Cc, Cd) of the adjacent columnar portions, vertices of the adjacent columnar portions are not placed on the line (L1, L2), the plurality of columnar portions each includes a first semiconductor layer that is n-type, a second semiconductor layer that is p-type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the m-planes (31a, 32a, 32c, 31b) are side surfaces of the columnar portions respectively, and each of the side surfaces is formed by the first semiconductor layer, second semiconductor layer, and the light emitting layer, characterised in that in the plan view as seen from the laminated direction, the line (L1, L2) is inclined at from 8 degrees to 22 degrees relative to perpendiculars (Pa, Pb, Qa, Qc) of the m-planes (31a, 31b, 32a, 32c), or in that the plurality of columnar portions are arranged in the regular triangular lattice form, wherein in the plan view as seen from the laminated direction, the line is inclined at from 38 degrees to 52 degrees relative to a perpendicular of an m-plane connected to the m-plane in a clockwise direction.