A semiconductor light-emitting device, comprising: a plurality of compound semiconductor layers including a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a first electrode under the plurality of compound semiconductor layers; a second electrode on the plurality of compound semiconductor layers comprising an electrode layer on the plurality of compound semiconductor layers; and a conductive supporting member on the electrode layer; a bending prevention member on the plurality of compound semiconductor layers, wherein the bending prevention member comprises a first bending prevention member including an insulating material, the bending prevention member being arranged between the electrode layer and the conductive supporting member and being embedded in the conductive supporting member as a plurality of islands or as a grid; and a channel layer (140, 140A) comprising a continuous pattern between the first bending prevention member and the second conductivity type semiconductor player, the channel layer (140, 140A) being disposed along an outer perimeter of the top surface of the second conductivity type semiconductor layer, but not in a central portion of the top surface of the second conductivity type semiconductor layer, wherein the electrode layer is formed on the channel layer (140,140A) and the second conductivity type semiconductor layer; wherein the conductive supporting member is formed on the bending prevention member, and wherein the first bending prevention member overlaps with the channel layer when viewed in a direction perpendicular to the top surface of the light-emitting device. a plurality of compound semiconductor layers including a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a first electrode under the plurality of compound semiconductor layers; a second electrode on the plurality of compound semiconductor layers comprising an electrode layer on the plurality of compound semiconductor layers; and a conductive supporting member on the electrode layer; a bending prevention member on the plurality of compound semiconductor layers, wherein the bending prevention member comprises a first bending prevention member including an insulating material, the bending prevention member being arranged between the electrode layer and the conductive supporting member and being embedded in the conductive supporting member as a plurality of islands or as a grid; and a channel layer (140, 140A) comprising a continuous pattern between the first bending prevention member and the second conductivity type semiconductor player, the channel layer (140, 140A) being disposed along an outer perimeter of the top surface of the second conductivity type semiconductor layer, but not in a central portion of the top surface of the second conductivity type semiconductor layer, wherein the electrode layer is formed on the channel layer (140,140A) and the second conductivity type semiconductor layer;