A method for producing a hybrid substrate comprising: - providing a substrate successively comprising a support layer, a layer made of a first semiconductor material, an isolation layer made of a second isolation material and a layer made of a second semiconductor material, - forming an etching mask having distinct patterns respectively delineating an isolation area, a first active area and a second active area, the first and second active areas being laterally offset and separated by the isolation area, the pattern of the isolation area having a polarity opposite the polarity of the patterns of the first active zone and the second active zone, - etching the layers made of the first and second semiconductor materials and the isolation layer to form a void area in the layer made of the first semiconductor material and to delineate at least the isolation area and the first active area in the layer made of the first semiconductor material, said etching reproducing in the layers made of first and second semiconductor materials and the isolation layer the patterns originating from the etching mask - etching the etching mask, the isolation layer and the layer made of the second semi-conductor material over the first active area to expose a main surface of the first active area, the first active area being formed in the material made of the first semiconductor layer and the second active area being formed in the layer made of the second semiconductor material, - filling the voids of the substrate and the etching mask by the first isolation material, - planarizing the first isolation material, - etching the first isolation material until the main surface of the first active area is released and the isolation area made of first isolation material is delinated. - providing a substrate successively comprising a support layer, a layer made of a first semiconductor material, an isolation layer made of a second isolation material and a layer made of a second semiconductor material, - forming an etching mask having distinct patterns respectively delineating an isolation area, a first active area and a second active area, the first and second active areas being laterally offset and separated by the isolation area, the pattern of the isolation area having a polarity opposite the polarity of the patterns of the first active zone and the second active zone, - etching the layers made of the first and second semiconductor materials and the isolation layer to form a void area in the layer made of the first semiconductor material and to delineate at least the isolation area and the first active area in the layer made of the first semiconductor material, said etching reproducing in the layers made of first and second semiconductor materials and the isolation layer the patterns originating from the etching mask - etching the etching mask, the isolation layer and the layer made of the second semi-conductor material over the first active area to expose a main surface of the first active area, the first active area being formed in the material made of the first semiconductor layer and the second active area being formed in the layer made of the second semiconductor material, - filling the voids of the substrate and the etching mask by the first isolation material, - planarizing the first isolation material, - etching the first isolation material until the main surface of the first active area is released and the isolation area made of first isolation material is delinated.