A method for the low-temperature production of at least one radial-electronic-junction semiconductor nanostructure on a substrate, said method comprising the following steps: a) formation of nanodrops of metal aggregates on said substrate, said metal aggregates electronically doping a first semiconductor material with a first doping type, said first semiconductor material being chosen among silicon and germanium and said metal aggregates being consisted of bismuth, gallium or an alloy of tin and a material chosen among bismuth and gallium, bismuth or the bismuth and tin alloy producing a n type electronic doping in silicon wherein bismuth is the n type dopant, respectively gallium or the tin and gallium alloy producing a p type electronic doping in silicon wherein gallium is the p type dopant; b) vapour-phase growth of doped semiconductor nanowires in said first semiconductor material on said substrate covered with metal aggregates, said substrate being heated to a temperature higher than or equal to the eutectic temperature of said metal aggregates, the vapour-phase growth of doped semiconductor nanowires being catalyzed by said metal aggregates in the presence of one or several precursor gases of said first semiconductor material, said one or several precursor gases being non-dopant gases, c) inactivation of the residual metal aggregates, d) chemical vapour deposition in the presence of one or several precursor gases and one dopant gas of at least one thin layer of a second semiconductor material on said doped semiconductor nanowires, said second semiconductor material being chosen among silicon and germanium, said dopant gas being capable of electronically doping said second semiconductor material with a second doping type, and said at least one thin layer of a second semiconductor material being conformally deposited on said doped semiconductor nanowires to form at least one radial-electronic-junction nanostructure between said semiconductor nanowires doped with a first doping type and said at least one thin layer doped with a second doping type, - said steps of a) formation of metal aggregates, b) growth of doped semiconductor nanowires, c) inactivation of metal aggregates and d) chemical vapour deposition being performed successively in a same vacuum deposition chamber. a) formation of nanodrops of metal aggregates on said substrate, said metal aggregates electronically doping a first semiconductor material with a first doping type, said first semiconductor material being chosen among silicon and germanium and said metal aggregates being consisted of bismuth, gallium or an alloy of tin and a material chosen among bismuth and gallium, bismuth or the bismuth and tin alloy producing a n type electronic doping in silicon wherein bismuth is the n type dopant, respectively gallium or the tin and gallium alloy producing a p type electronic doping in silicon wherein gallium is the p type dopant; b) vapour-phase growth of doped semiconductor nanowires in said first semiconductor material on said substrate covered with metal aggregates, said substrate being heated to a temperature higher than or equal to the eutectic temperature of said metal aggregates, the vapour-phase growth of doped semiconductor nanowires being catalyzed by said metal aggregates in the presence of one or several precursor gases of said first semiconductor material, said one or several precursor gases being non-dopant gases, c) inactivation of the residual metal aggregates, d) chemical vapour deposition in the presence of one or several precursor gases and one dopant gas of at least one thin layer of a second semiconductor material on said doped semiconductor nanowires, said second semiconductor material being chosen among silicon and germanium, said dopant gas being capable of electronically doping said second semiconductor material with a second doping type, and said at least one thin layer of a second semiconductor material being conformally deposited on said doped semiconductor nanowires to form at least one radial-electronic-junction nanostructure between said semiconductor nanowires doped with a first doping type and said at least one thin layer doped with a second doping type, - said steps of a) formation of metal aggregates, b) growth of doped semiconductor nanowires, c) inactivation of metal aggregates and d) chemical vapour deposition being performed successively in a same vacuum deposition chamber. - said steps of a) formation of metal aggregates, b) growth of doped semiconductor nanowires, c) inactivation of metal aggregates and d) chemical vapour deposition being performed successively in a same vacuum deposition chamber.