Method for testing a high-power semiconductor element of power converters in high-voltage direct current transmission by means of a test circuit comprising a plurality of series-connected voltage-regulated power converter modules which are connected to the primary side of a high-current transformer, and wherein the secondary side of the high-current transformer is connected to the high-power semiconductor element, wherein the voltage-regulated power converter modules each comprise a capacitor and four transistors, respectively with a freewheeling diode in a full bridge circuit, in which use is made of a high-voltage source which comprises the series-connected voltage-regulated power converter modules, these power converter modules are used to simulate current profiles for the high-power semiconductor element which occur in a high-voltage direct current transmission mode, wherein the high-current transformer is used to achieve high currents required for the test, in which use is made of a test cycle which comprises the following temporally sequential phases A to D, which are generated by the control of the voltage-regulated power converter modules: A: positive voltage on the primary side of the high-current transformer; B: zero voltage on the primary side of the high-current transformer; C: negative voltage on the primary side of the high-current transformer, in which, in a phase D of the test cycle that directly temporally follows the negative voltage, the voltage-regulated power converter modules are switched to an undefined state which is a high-resistance state of all the transistors of the power converter modules, and in which the temporal phase D duration of the undefined state is dimensioned for the decay of a magnetic flux accumulated in the high-current transformer, wherein a plurality of identical test cycles proceed in sequence, wherein each test cycle comprises the phases A, B, C and D in this order. in which use is made of a high-voltage source which comprises the series-connected voltage-regulated power converter modules, these power converter modules are used to simulate current profiles for the high-power semiconductor element which occur in a high-voltage direct current transmission mode, wherein the high-current transformer is used to achieve high currents required for the test, in which use is made of a test cycle which comprises the following temporally sequential phases A to D, which are generated by the control of the voltage-regulated power converter modules: A: positive voltage on the primary side of the high-current transformer; B: zero voltage on the primary side of the high-current transformer; C: negative voltage on the primary side of the high-current transformer, A: positive voltage on the primary side of the high-current transformer; B: zero voltage on the primary side of the high-current transformer; C: negative voltage on the primary side of the high-current transformer, in which, in a phase D of the test cycle that directly temporally follows the negative voltage, the voltage-regulated power converter modules are switched to an undefined state which is a high-resistance state of all the transistors of the power converter modules, and in which the temporal phase D duration of the undefined state is dimensioned for the decay of a magnetic flux accumulated in the high-current transformer, wherein a plurality of identical test cycles proceed in sequence, wherein each test cycle comprises the phases A, B, C and D in this order.