A method of operating non-volatile storage, the method comprising: accessing data to be programmed into the non-volatile storage, the nonvolatile storage having a plurality of non-volatile storage elements that are arranged in a plurality of blocks and a plurality of word lines associated with the plurality of non-volatile storage elements, the plurality of blocks including single-level blocks and multi-level blocks, the non-volatile storage having even bit lines and odd bit lines associated with the plurality of non-volatile storage elements; programming a first contiguous chunk of the data into a first group of the plurality of non-volatile storage elements associated with the even bit lines, the first contiguous chunk of the data is programmed over a first sequence of word lines in at least one of the single-level blocks; programming a second contiguous chunk of the data into a second group of the non-volatile storage elements associated with the odd bit lines, the second contiguous chunk of the data is programmed over a second sequence of word lines in the at least one single-level block; charging a first set of bit lines, the first set of bit lines are associated with a first word line and a second word line, the first set of bit lines are associated with a first plurality of non-volatile storage elements; grounding a second set of bit lines while the first set of bit lines are charged, individual bit lines in the second set alternate with individual bit lines in the first set, the second set of bit lines are associated with the first word line and the second word line, the second set of bit lines are associated with a second plurality of non-volatile storage elements; sensing non-volatile storage elements of the first plurality of nonvolatile storage elements that are associated with the first set of bit lines and are associated with the first word line, the sensing occurs while the first set of bit lines remain charged; and sensing non-volatile storage elements of the first plurality of non-volatile storage elements that are associated with the first set of bit lines and are associated with the second word line, the sensing occurs while the first set of bit lines remain charged. accessing data to be programmed into the non-volatile storage, the nonvolatile storage having a plurality of non-volatile storage elements that are arranged in a plurality of blocks and a plurality of word lines associated with the plurality of non-volatile storage elements, the plurality of blocks including single-level blocks and multi-level blocks, the non-volatile storage having even bit lines and odd bit lines associated with the plurality of non-volatile storage elements; programming a first contiguous chunk of the data into a first group of the plurality of non-volatile storage elements associated with the even bit lines, the first contiguous chunk of the data is programmed over a first sequence of word lines in at least one of the single-level blocks; programming a second contiguous chunk of the data into a second group of the non-volatile storage elements associated with the odd bit lines, the second contiguous chunk of the data is programmed over a second sequence of word lines in the at least one single-level block; charging a first set of bit lines, the first set of bit lines are associated with a first word line and a second word line, the first set of bit lines are associated with a first plurality of non-volatile storage elements; grounding a second set of bit lines while the first set of bit lines are charged, individual bit lines in the second set alternate with individual bit lines in the first set, the second set of bit lines are associated with the first word line and the second word line, the second set of bit lines are associated with a second plurality of non-volatile storage elements; sensing non-volatile storage elements of the first plurality of nonvolatile storage elements that are associated with the first set of bit lines and are associated with the first word line, the sensing occurs while the first set of bit lines remain charged; and sensing non-volatile storage elements of the first plurality of non-volatile storage elements that are associated with the first set of bit lines and are associated with the second word line, the sensing occurs while the first set of bit lines remain charged.