A method of manufacturing a vertical light emitting diode, LED, comprising the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; performing a first isolation, ISO, process for isolating the light emitting structure into unit LED elements such that portions of the light emitting structure corresponding to element isolation regions remain with a predetermined thickness on the sapphire substrate; forming a p-electrode on the surface of the p-type nitride semiconductor layer of each unit LED element region; forming a structure support layer on the p-electrode; removing the sapphire substrate through a laser lift-off, LLO, process; performing a second ISO process for completely isolating the light emitting structure into unit LED elements by removing the remaining portions of the light emitting structure corresponding to the element isolation regions; forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures; characterized by: the structure support layer being formed of a silicon substrate; and by further comprising the steps of: forming a first insulating film or a first reflecting film on the side surfaces of the light emitting structures after the performing of the first ISO process; and forming a second insulating film or a second reflecting film on the side surfaces of the isolated light emitting structures after the performing of the second ISO process. preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; performing a first isolation, ISO, process for isolating the light emitting structure into unit LED elements such that portions of the light emitting structure corresponding to element isolation regions remain with a predetermined thickness on the sapphire substrate; forming a p-electrode on the surface of the p-type nitride semiconductor layer of each unit LED element region; forming a structure support layer on the p-electrode; removing the sapphire substrate through a laser lift-off, LLO, process; performing a second ISO process for completely isolating the light emitting structure into unit LED elements by removing the remaining portions of the light emitting structure corresponding to the element isolation regions; forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures; characterized by: the structure support layer being formed of a silicon substrate; and by further comprising the steps of: forming a first insulating film or a first reflecting film on the side surfaces of the light emitting structures after the performing of the first ISO process; and forming a second insulating film or a second reflecting film on the side surfaces of the isolated light emitting structures after the performing of the second ISO process. forming a first insulating film or a first reflecting film on the side surfaces of the light emitting structures after the performing of the first ISO process; and forming a second insulating film or a second reflecting film on the side surfaces of the isolated light emitting structures after the performing of the second ISO process.