A method for manufacturing a hybrid cache architecture, comprising: providing a magnetoresistive random-access memory bit cell array for the hybrid cache architecture by: providing a first plurality of magnetoresistive random-access memory bit cells (310, 312, 314, 316, 318 and 320) and a second plurality of magnetoresistive random-access memory bit cells (302, 304, 306 and 308); and coupling the first plurality of magnetoresistive random-access memory bit cells to the second plurality of magnetoresistive random-access memory bit cells; providing a plurality of sense amplifiers comprising one or more differential sense amplifiers and one or more single-ended sense amplifiers (324, 326 and 328); coupling each magnetoresistive random-access memory bit cell in the first plurality of magnetoresistive random-access memory bit cells to one of the one or more single-ended sense amplifiers and not to any of the one or more differential sense amplifiers; and coupling each pair of magnetoresistive random-access memory bit cells in the second plurality of magnetoresistive random-access memory bit cells to one of the one or more differential sense amplifiers and not to any of the one or more single-ended sense amplifiers, wherein providing the magnetoresistive random-access memory bit cell array comprises providing the magnetoresistive random-access memory bit cell array in a uniform configuration such that a number of magnetoresistive random-access memory bit cells in each column of the first plurality of magnetoresistive random-access memory bit cells is the same as a number of magnetoresistive random-access memory bit cells in each column of the second plurality of magnetoresistive random-access memory bit cells, and wherein providing the plurality of sense amplifiers comprises providing the plurality of sense amplifiers in a non-uniform configuration. providing a magnetoresistive random-access memory bit cell array for the hybrid cache architecture by: providing a first plurality of magnetoresistive random-access memory bit cells (310, 312, 314, 316, 318 and 320) and a second plurality of magnetoresistive random-access memory bit cells (302, 304, 306 and 308); and coupling the first plurality of magnetoresistive random-access memory bit cells to the second plurality of magnetoresistive random-access memory bit cells; providing a plurality of sense amplifiers comprising one or more differential sense amplifiers and one or more single-ended sense amplifiers (324, 326 and 328); providing a first plurality of magnetoresistive random-access memory bit cells (310, 312, 314, 316, 318 and 320) and a second plurality of magnetoresistive random-access memory bit cells (302, 304, 306 and 308); and coupling the first plurality of magnetoresistive random-access memory bit cells to the second plurality of magnetoresistive random-access memory bit cells; providing a plurality of sense amplifiers comprising one or more differential sense amplifiers and one or more single-ended sense amplifiers (324, 326 and 328); coupling each magnetoresistive random-access memory bit cell in the first plurality of magnetoresistive random-access memory bit cells to one of the one or more single-ended sense amplifiers and not to any of the one or more differential sense amplifiers; and coupling each pair of magnetoresistive random-access memory bit cells in the second plurality of magnetoresistive random-access memory bit cells to one of the one or more differential sense amplifiers and not to any of the one or more single-ended sense amplifiers, wherein providing the magnetoresistive random-access memory bit cell array comprises providing the magnetoresistive random-access memory bit cell array in a uniform configuration such that a number of magnetoresistive random-access memory bit cells in each column of the first plurality of magnetoresistive random-access memory bit cells is the same as a number of magnetoresistive random-access memory bit cells in each column of the second plurality of magnetoresistive random-access memory bit cells, and wherein providing the plurality of sense amplifiers comprises providing the plurality of sense amplifiers in a non-uniform configuration.