A semiconductor light emitting device, comprising: a first conductive type semiconductor layer comprising insulation layers and voids between the insulation layers, the insulation layers being spaced by a predetermined interval; a substrate under the first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer, characterized in that: the first conductive type semiconductor layer comprises: a first nitride layer under the insulation layer; a second nitride layer comprising the voids and disposed on the insulation layers and the first nitride layer; and a third nitride layer between the second nitride layer and the active layer, wherein the first to third nitride layers (141,144,146) are n-type semiconductor layers doped with an n-type dopant, wherein the second conductive type semiconductor layer is a p-type semiconductor layer doped with a p-type dopant, wherein the voids are disposed between the insulation layers, within the second nitride layer, wherein a region of the second nitride layer having the voids is disposed in a recess region between the insulating layers, the light emitting device further comprises a first electrode layer on the first nitride layer, a second electrode layer on the second conductive type semiconductor layer, wherein the insulating layers and the voids are disposed between the first nitride layer on which the first electrode layer is disposed and the active layer. a first conductive type semiconductor layer comprising insulation layers and voids between the insulation layers, the insulation layers being spaced by a predetermined interval; a substrate under the first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer, the first conductive type semiconductor layer comprises: a first nitride layer under the insulation layer; a second nitride layer comprising the voids and disposed on the insulation layers and the first nitride layer; and a third nitride layer between the second nitride layer and the active layer, a first nitride layer under the insulation layer; a second nitride layer comprising the voids and disposed on the insulation layers and the first nitride layer; and a third nitride layer between the second nitride layer and the active layer, wherein the first to third nitride layers (141,144,146) are n-type semiconductor layers doped with an n-type dopant, wherein the second conductive type semiconductor layer is a p-type semiconductor layer doped with a p-type dopant, wherein the voids are disposed between the insulation layers, within the second nitride layer, wherein a region of the second nitride layer having the voids is disposed in a recess region between the insulating layers, the light emitting device further comprises a first electrode layer on the first nitride layer, a second electrode layer on the second conductive type semiconductor layer, wherein the insulating layers and the voids are disposed between the first nitride layer on which the first electrode layer is disposed and the active layer.