A tunnel oxide passivated contact, TOPCON, solar cell, comprising: a substrate having a first surface, wherein the substrate is a semiconductor substrate; a tunneling layer formed on the first surface; a first doped conductive layer formed on the tunneling layer, wherein a material of the first doped conductive layer includes at least one of amorphous silicon, polycrystalline silicon, or silicon carbide; a second doped conductive layer formed on the first doped conductive layer, wherein a material of the second doped conductive layer includes at least one of amorphous silicon, polycrystalline silicon, or silicon carbide, the second doped conductive layer comprises: a plurality of first portions and a plurality of second portions arranged alternately in a direction perpendicular to a predetermined direction and perpendicular to a thickness direction of the second doped conductive layer, each of the plurality of first portions and the plurality of second portions extends along the predetermined direction, a doping element concentration of the first doped conductive layer is lower than a doping element concentration of each of the plurality of first portions, and the doping element concentration of each of the plurality of first portions is lower than a doping element concentration of each of the plurality of second portions, wherein the second doped conductive layer is configured to enable carriers in each of the plurality of first portions to be transported to a respective second portion in the plurality of second portions; wherein the predetermined direction is parallel to the first surface, and the first doped conductive layer has doping element of a same type as the substrate, and the second doped conductive layer has doping element of a same type as the substrate; a plurality of first electrodes corresponding, respectively, to the plurality of second portions, wherein each of the plurality of first electrodes extends along the predetermined direction, and each of the plurality of first electrodes is in electrical contact with a corresponding second portion in the plurality of second portions. a substrate having a first surface, wherein the substrate is a semiconductor substrate; a tunneling layer formed on the first surface; a first doped conductive layer formed on the tunneling layer, wherein a material of the first doped conductive layer includes at least one of amorphous silicon, polycrystalline silicon, or silicon carbide; a second doped conductive layer formed on the first doped conductive layer, wherein a material of the second doped conductive layer includes at least one of amorphous silicon, polycrystalline silicon, or silicon carbide, the second doped conductive layer comprises: a plurality of first portions and a plurality of second portions arranged alternately in a direction perpendicular to a predetermined direction and perpendicular to a thickness direction of the second doped conductive layer, each of the plurality of first portions and the plurality of second portions extends along the predetermined direction, a doping element concentration of the first doped conductive layer is lower than a doping element concentration of each of the plurality of first portions, and the doping element concentration of each of the plurality of first portions is lower than a doping element concentration of each of the plurality of second portions, wherein the second doped conductive layer is configured to enable carriers in each of the plurality of first portions to be transported to a respective second portion in the plurality of second portions; wherein the predetermined direction is parallel to the first surface, and the first doped conductive layer has doping element of a same type as the substrate, and the second doped conductive layer has doping element of a same type as the substrate; a plurality of first electrodes corresponding, respectively, to the plurality of second portions, wherein each of the plurality of first electrodes extends along the predetermined direction, and each of the plurality of first electrodes is in electrical contact with a corresponding second portion in the plurality of second portions.