A method of forming a photoresist relief image, comprising: (a) applying on a substrate an antireflective coating composition comprising a resin, wherein the resin comprises 1) a covalently linked crosslinker group comprising reactive hydroxyl, nitrogen, carboxy and/or epoxy groups, 2) polyester linkages and 3) a compound that corresponds to the following formula: wherein at least two of the radicals R 1 00C(CH 2)n-, R 2 - and R 3 00C(CH 2)m - are different acid or ester groups, and each of R 1 00C(CH 2)n-, R 2 and R 3 00C(CH 2)m - differ by two or more atoms; and R 1, R 2 and R 3 are each independently hydrogen or optionally substituted alkyl, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted alkanoyl, optionally substituted alkoxy, optionally substituted alkylthio, optionally substituted alkysulfinyl, optionally substituted alkylsulfonyl, optionally substituted carboxy, optionally substituted alkaryl, optionally substituted carbocyclic aryl, optionally substituted heteroalicyclic or optionally substituted heteroaromatic; and n and m are each independently a whole number, and wherein R 2 has halogen substitution, and crosslinking the antireflective composition prior to applying a photoresist composition; (b) applying a photoresist composition above the coating composition layer; and (c) exposing and developing the photoresist layer to provide a resist relief image. (a) applying on a substrate an antireflective coating composition comprising a resin, wherein the resin comprises 1) a covalently linked crosslinker group comprising reactive hydroxyl, nitrogen, carboxy and/or epoxy groups, 2) polyester linkages and 3) a compound that corresponds to the following formula: wherein at least two of the radicals R 1 00C(CH 2)n-, R 2 - and R 3 00C(CH 2)m - are different acid or ester groups, and each of R 1 00C(CH 2)n-, R 2 and R 3 00C(CH 2)m - differ by two or more atoms; and R 1, R 2 and R 3 are each independently hydrogen or optionally substituted alkyl, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted alkanoyl, optionally substituted alkoxy, optionally substituted alkylthio, optionally substituted alkysulfinyl, optionally substituted alkylsulfonyl, optionally substituted carboxy, optionally substituted alkaryl, optionally substituted carbocyclic aryl, optionally substituted heteroalicyclic or optionally substituted heteroaromatic; and n and m are each independently a whole number, and wherein R 2 has halogen substitution, and crosslinking the antireflective composition prior to applying a photoresist composition; wherein at least two of the radicals R 1 00C(CH 2)n-, R 2 - and R 3 00C(CH 2)m - are different acid or ester groups, and each of R 1 00C(CH 2)n-, R 2 and R 3 00C(CH 2)m - differ by two or more atoms; and R 1, R 2 and R 3 are each independently hydrogen or optionally substituted alkyl, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted alkanoyl, optionally substituted alkoxy, optionally substituted alkylthio, optionally substituted alkysulfinyl, optionally substituted alkylsulfonyl, optionally substituted carboxy, optionally substituted alkaryl, optionally substituted carbocyclic aryl, optionally substituted heteroalicyclic or optionally substituted heteroaromatic; and n and m are each independently a whole number, and wherein R 2 has halogen substitution, and crosslinking the antireflective composition prior to applying a photoresist composition; (b) applying a photoresist composition above the coating composition layer; and (c) exposing and developing the photoresist layer to provide a resist relief image.