Circuitry comprising a semiconductor switching device and a gate drive circuit for applying a gate voltage to a gate of the semiconductor switching device, the semiconductor switching device comprising an insulated gate bipolar transistor, IGBT, (210, 220) and a freewheeling diode (215, 225) in parallel with the IGBT (210, 220), the gate drive circuit comprising: a gate drive controller providing one or more voltage commands for operating the semiconductor switching device; a plurality of primary gate resistors (312, 314) coupled between the gate drive controller and the semiconductor switching device; a plurality of secondary gate resistors (315, 316, 317, 318) connected with the primary gate resistors (312, 314); a plurality of primary transistors (324, 325) connected in series with each of the primary gate resistors (312, 314); and, a plurality of secondary transistors (326, 327, 328, 329) connected in series with each of the secondary gate resistors (315, 316, 317, 318), wherein each of the primary and secondary transistors (324, 325, 326, 327, 328, 329) is configured to receive a respective voltage command (V1_ON to V4_OFF) from the gate drive controller and provides a corresponding voltage level to the semiconductor switching device so as to control the on-off behavior of the semiconductor switching device, wherein the corresponding voltage levels comprise at least a first voltage and a second voltage, the first voltage being configured to turn on the semiconductor switching device via a first primary gate resistor, the first voltage being greater than a threshold voltage for the semiconductor switching device, the second voltage being configured to turn off the semiconductor switching device via a second primary gate resistor, the second voltage being less than the threshold voltage, characterized in that during turn off of the semiconductor switching device, the gate drive controller is further configured to apply a third voltage to the gate of the semiconductor switching device via a first secondary gate resistor for a first turn off period, the third voltage being less than the first voltage but greater than the second voltage, the gate drive controller is further configured to apply a fourth voltage to the gate of the semiconductor switching device via a second secondary gate resistor for a second turn off period, the fourth voltage being less than the third voltage but greater than the second voltage, the second turn off period corresponding to a period of time of a reverse recovery of the freewheeling diode, during turn on of the semiconductor switching device, the gate drive controller is further configured to apply the fourth voltage to the gate of the semiconductor switching device via a third secondary gate resistor for a first turn on period, and the gate drive controller is further configured to apply the third voltage to the gate of the semiconductor switching device via a fourth secondary gate resistor for a second turn on period. a gate drive controller providing one or more voltage commands for operating the semiconductor switching device; a plurality of primary gate resistors (312, 314) coupled between the gate drive controller and the semiconductor switching device; a plurality of secondary gate resistors (315, 316, 317, 318) connected with the primary gate resistors (312, 314); a plurality of primary transistors (324, 325) connected in series with each of the primary gate resistors (312, 314); and, a plurality of secondary transistors (326, 327, 328, 329) connected in series with each of the secondary gate resistors (315, 316, 317, 318), wherein each of the primary and secondary transistors (324, 325, 326, 327, 328, 329) is configured to receive a respective voltage command (V1_ON to V4_OFF) from the gate drive controller and provides a corresponding voltage level to the semiconductor switching device so as to control the on-off behavior of the semiconductor switching device, wherein the corresponding voltage levels comprise at least a first voltage and a second voltage, the first voltage being configured to turn on the semiconductor switching device via a first primary gate resistor, the first voltage being greater than a threshold voltage for the semiconductor switching device, the second voltage being configured to turn off the semiconductor switching device via a second primary gate resistor, the second voltage being less than the threshold voltage, characterized in that during turn off of the semiconductor switching device, the gate drive controller is further configured to apply a third voltage to the gate of the semiconductor switching device via a first secondary gate resistor for a first turn off period, the third voltage being less than the first voltage but greater than the second voltage, the gate drive controller is further configured to apply a fourth voltage to the gate of the semiconductor switching device via a second secondary gate resistor for a second turn off period, the fourth voltage being less than the third voltage but greater than the second voltage, the second turn off period corresponding to a period of time of a reverse recovery of the freewheeling diode, during turn on of the semiconductor switching device, the gate drive controller is further configured to apply the fourth voltage to the gate of the semiconductor switching device via a third secondary gate resistor for a first turn on period, and the gate drive controller is further configured to apply the third voltage to the gate of the semiconductor switching device via a fourth secondary gate resistor for a second turn on period.