A microelectromechanical systems (MEMS) device, comprising: a silicon wafer having an upper surface, the upper surface defining a sensing region; a patterned conductive layer on the upper surface; a bolometer including a suspension portion that extends over the sensing region, the suspension portion being suspended above the sensing region by at least one anchor structure (26, 26a) which extends upwardly from the patterned conductive layer to space the suspension portion a predetermined distance apart from the upper surface of the silicon wafer, the suspension portion and the at least one anchor structure (26, 26a) being formed by a layer stack comprising a bottom insulator layer and a top conductive layer; and a control circuit electrically connected to the patterned conductive layer and being configured to selectively apply a first DC voltage and a second DC voltage to the patterned conductive layer, wherein the at least one anchor structure (26, 26a) includes a base portion that is attached to the patterned conductive layer, wherein, in the base portion of the at least one anchor structure (26, 26a), the bottom insulator layer is arranged adjacent the patterned conductive layer and is interposed between the top conductive layer and the patterned conductive layer such that there is no direct contact between the top conductive layer and the patterned conductive layer wherein the base portion of the at least one anchor structure (26, 26a) is configured as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, wherein, when in the high resistive state, the base portion has a resistance that substantially prevents current flow between the top conductive layer and the patterned conductive layer, and wherein, when in the low resistive state, the base portion of the at least one anchor structure (26, 26a) forms an ohmic contact between the top conductive layer and the patterned conductive layer such that enables current to flow between the top conductive layer and the patterned conductive layer. a silicon wafer having an upper surface, the upper surface defining a sensing region; a patterned conductive layer on the upper surface; a bolometer including a suspension portion that extends over the sensing region, the suspension portion being suspended above the sensing region by at least one anchor structure (26, 26a) which extends upwardly from the patterned conductive layer to space the suspension portion a predetermined distance apart from the upper surface of the silicon wafer, the suspension portion and the at least one anchor structure (26, 26a) being formed by a layer stack comprising a bottom insulator layer and a top conductive layer; and a control circuit electrically connected to the patterned conductive layer and being configured to selectively apply a first DC voltage and a second DC voltage to the patterned conductive layer, wherein the at least one anchor structure (26, 26a) includes a base portion that is attached to the patterned conductive layer, wherein, in the base portion of the at least one anchor structure (26, 26a), the bottom insulator layer is arranged adjacent the patterned conductive layer and is interposed between the top conductive layer and the patterned conductive layer such that there is no direct contact between the top conductive layer and the patterned conductive layer wherein the base portion of the at least one anchor structure (26, 26a) is configured as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, wherein, when in the high resistive state, the base portion has a resistance that substantially prevents current flow between the top conductive layer and the patterned conductive layer, and wherein, when in the low resistive state, the base portion of the at least one anchor structure (26, 26a) forms an ohmic contact between the top conductive layer and the patterned conductive layer such that enables current to flow between the top conductive layer and the patterned conductive layer.