A push-pull bridge-type magnetic sensor for high-intensity magnetic fields, wherein the sensor comprises: at least one push arm constituted by electrical interconnection of one or more magnetoresistive sensing elements on a push arm substrate, and at least one pull arm constituted by electrical interconnection of one or more magnetoresistive sensing elements on a pull arm substrate; at least one push arm attenuator deposited on the push arm substrate, and at least one pull arm attenuator deposited on the pull arm substrate, wherein a long axis direction of the at least one push arm attenuator and the at least one pull arm attenuator being parallel to a Y-axis direction, and short axis directions of the at least one push arm attenuator and the at least one pull arm attenuator being parallel to an X-axis direction; characterized in that, the attenuators are magnetically-soft ferromagnetic alloy attenuators containing one or at least two elements of Ni, Fe and Co; and the magnetoresistive sensing elements in the push arm being arranged in columns above or below the at least one push arm attenuator, and the magnetoresistive sensing elements in the pull arm being arranged in columns above or below the at least one pull arm attenuator; magnetization directions (100, 101) of magnetic pinning layers of the magnetoresistive sensing elements on the same substrate being the same, and magnetization directions of magnetic pinning layers of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate being opposite; and sensitivity directions of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate are the X-axis direction. at least one push arm constituted by electrical interconnection of one or more magnetoresistive sensing elements on a push arm substrate, and at least one pull arm constituted by electrical interconnection of one or more magnetoresistive sensing elements on a pull arm substrate; at least one push arm attenuator deposited on the push arm substrate, and at least one pull arm attenuator deposited on the pull arm substrate, wherein a long axis direction of the at least one push arm attenuator and the at least one pull arm attenuator being parallel to a Y-axis direction, and short axis directions of the at least one push arm attenuator and the at least one pull arm attenuator being parallel to an X-axis direction; characterized in that, the attenuators are magnetically-soft ferromagnetic alloy attenuators containing one or at least two elements of Ni, Fe and Co; and the magnetoresistive sensing elements in the push arm being arranged in columns above or below the at least one push arm attenuator, and the magnetoresistive sensing elements in the pull arm being arranged in columns above or below the at least one pull arm attenuator; magnetization directions (100, 101) of magnetic pinning layers of the magnetoresistive sensing elements on the same substrate being the same, and magnetization directions of magnetic pinning layers of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate being opposite; and sensitivity directions of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate are the X-axis direction.