An electrostatic discharge, ESD, protection circuit (302 through 602) comprising: a silicon controlled rectifier, SCR,, the SCR including: an anode connectable to a pad adapted to be connected to a protected circuit node of an integrated circuit; a cathode; a PNP transistor formed by a collector of P-type conductivity, a base of N-type conductivity, and an emitter of P-type conductivity, said P-type emitter being connected to the anode; an NPN transistor formed by a collector of N-type conductivity, such that the collector of the NPN transistor is coupled to the base of the PNP transistor, a base of P-type conductivity such that the base of the NPN transistor is coupled to the collector of the PNP transistor, and an emitter of N-type conductivity, said N-type emitter being connected to the cathode; an NPN trigger tap (G1, 336) of P-type conductivity coupled to the base of the NPN transistor; and a trigger circuit including a serial chain of at least one trigger PN junction diode coupled in a forward conduction direction from the anode of the SCR to the NPN trigger tap, characterized in that a first end of the serial chain of at least one trigger PN junction diode is directly connected to the anode of the SCR and a second end of the serial chain of at least one trigger PN junction diode is directly connected to the NPN trigger tap. a silicon controlled rectifier, SCR,, the SCR including: an anode connectable to a pad adapted to be connected to a protected circuit node of an integrated circuit; a cathode; a PNP transistor formed by a collector of P-type conductivity, a base of N-type conductivity, and an emitter of P-type conductivity, said P-type emitter being connected to the anode; an NPN transistor formed by a collector of N-type conductivity, such that the collector of the NPN transistor is coupled to the base of the PNP transistor, a base of P-type conductivity such that the base of the NPN transistor is coupled to the collector of the PNP transistor, and an emitter of N-type conductivity, said N-type emitter being connected to the cathode; an NPN trigger tap (G1, 336) of P-type conductivity coupled to the base of the NPN transistor; and an anode connectable to a pad adapted to be connected to a protected circuit node of an integrated circuit; a cathode; a PNP transistor formed by a collector of P-type conductivity, a base of N-type conductivity, and an emitter of P-type conductivity, said P-type emitter being connected to the anode; an NPN transistor formed by a collector of N-type conductivity, such that the collector of the NPN transistor is coupled to the base of the PNP transistor, a base of P-type conductivity such that the base of the NPN transistor is coupled to the collector of the PNP transistor, and an emitter of N-type conductivity, said N-type emitter being connected to the cathode; an NPN trigger tap (G1, 336) of P-type conductivity coupled to the base of the NPN transistor; and a trigger circuit including a serial chain of at least one trigger PN junction diode coupled in a forward conduction direction from the anode of the SCR to the NPN trigger tap, characterized in that a first end of the serial chain of at least one trigger PN junction diode is directly connected to the anode of the SCR and a second end of the serial chain of at least one trigger PN junction diode is directly connected to the NPN trigger tap.