An apparatus, comprising: a plurality of circuits, each of the plurality of circuits including multiple magnetic tunnel junctions, each magnetic tunnel junction including a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction; a field line (112, 612, 1312, 1412) configured to generate a magnetic field based on an input, wherein: the sense magnetization direction of each magnetic tunnel junction is configured based on the magnetic field; and each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on an external magnetic field; a sensing module configured to determine a parameter of the each of the plurality of circuits, wherein the parameter of the each of the plurality of circuits varies based on the resistances of the multiple magnetic tunnel junctions included in the each of the plurality of circuits; and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to the external magnetic field based on the parameter of the each of the plurality of circuits, the magnetic field direction determination module being implemented in at least one of a memory or a processing device; characterized in that: each of the plurality of circuits has an average storage magnetization direction corresponding to a magnetization direction of an average of storage magnetizations of the multiple magnetic tunnel junctions included in the each of the plurality of circuits; and the average storage magnetization direction of the each of the plurality of circuits is unique. a plurality of circuits, each of the plurality of circuits including multiple magnetic tunnel junctions, each magnetic tunnel junction including a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction; a field line (112, 612, 1312, 1412) configured to generate a magnetic field based on an input, wherein: the sense magnetization direction of each magnetic tunnel junction is configured based on the magnetic field; and each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on an external magnetic field; the sense magnetization direction of each magnetic tunnel junction is configured based on the magnetic field; and each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on an external magnetic field; a sensing module configured to determine a parameter of the each of the plurality of circuits, wherein the parameter of the each of the plurality of circuits varies based on the resistances of the multiple magnetic tunnel junctions included in the each of the plurality of circuits; and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to the external magnetic field based on the parameter of the each of the plurality of circuits, the magnetic field direction determination module being implemented in at least one of a memory or a processing device; each of the plurality of circuits has an average storage magnetization direction corresponding to a magnetization direction of an average of storage magnetizations of the multiple magnetic tunnel junctions included in the each of the plurality of circuits; and the average storage magnetization direction of the each of the plurality of circuits is unique.