等離子體參數

等離子體參數，是一系列描述某種電漿的性質的參數。一般來說是以厘米-克-秒制來當作參數的基本單位，但是溫度卻是以電子伏特(eV)當作單位，而質量則是以質子質量(μ = mi / mp )的倍數當作單位。在這裡， K是指波長、Z是指荷電狀態、k是指波茲曼常數、γ是指絕熱指數而Λ 是指库仑碰撞。電漿可以看成一群粒子的系統，因此可以以統計的方式研究它。 以下是一些基本的離子體參數: 電子迴轉頻率: ω c e = e B / m e c = 1.76 × 10 7 B rad/s {\displaystyle \omega _{ce}=eB/m_{e}c=1.76\times 10^{7}B{\mbox{rad/s}}\,} 離子迴轉頻率 ω c i = e B / m i c = 9.58 × 10 3 Z μ − 1 B rad/s {\displaystyle \omega _{ci}=eB/m_{i}c=9.58\times 10^{3}Z\mu ^{-1}B{\mbox{rad/s}}\,} 電子等離子體頻率 ω p e = ( 4 π n e e 2 / m e ε 0 ) 1 / 2 = 199.98 × n e 1 / 2 rad/s {\displaystyle \omega _{pe}=(4\pi n_{e}e^{2}/m_{e}\varepsilon _{0})^{1/2}=199.98\times n_{e}^{1/2}{\mbox{rad/s}}} 離子等離子體頻率: ω p i = ( 4 π n i Z 2 e 2 / m i ) 1 / 2 = 1.32 × 10 3 Z μ − 1 / 2 n i 1 / 2 rad/s {\displaystyle \omega _{pi}=(4\pi n_{i}Z^{2}e^{2}/m_{i})^{1/2}=1.32\times 10^{3}Z\mu ^{-1/2}n_{i}^{1/2}{\mbox{rad/s}}} 低電子陷阱率 ν T e = ( e K E / m e ) 1 / 2 = 7.26 × 10 8 K 1 / 2 E 1 / 2 s − 1 {\displaystyle \nu _{Te}=(eKE/m_{e})^{1/2}=7.26\times 10^{8}K^{1/2}E^{1/2}{\mbox{s}}^{-1}\,} 低離子陷阱率: ν T i = ( Z e K E / m i ) 1 / 2 = 1.69 × 10 7 Z 1 / 2 K 1 / 2 E 1 / 2 μ − 1 / 2 s − 1 {\displaystyle \nu _{Ti}=(ZeKE/m_{i})^{1/2}=1.69\times 10^{7}Z^{1/2}K^{1/2}E^{1/2}\mu ^{-1/2}{\mbox{s}}^{-1}\,} 電子碰撞率: ν e = 2.91 × 10 − 6 n e ln ⁡ Λ T e − 3 / 2 s − 1 {\displaystyle \nu _{e}=2.91\times 10^{-6}n_{e}\,\ln \Lambda \,T_{e}^{-3/2}{\mbox{s}}^{-1}} 離子碰撞率: ν i = 4.80 × 10 − 8 Z 4 μ − 1 / 2 n i ln ⁡ Λ T i − 3 / 2 s − 1 {\displaystyle \nu _{i}=4.80\times 10^{-8}Z^{4}\mu ^{-1/2}n_{i}\,\ln \Lambda \,T_{i}^{-3/2}{\mbox{s}}^{-1}} : Λ e = h 2 2 π m e k T e = 6.919 × 10 − 8 T e − 1 / 2 cm {\displaystyle \Lambda _{e}={\sqrt {\frac {h^{2}}{2\pi m_{e}kT_{e}}}}=6.919\times 10^{-8}\,T_{e}^{-1/2}\,{\mbox{cm}}} classical distance of closest approach e 2 / k T = 1.44 × 10 − 7 T − 1 cm {\displaystyle e^{2}/kT=1.44\times 10^{-7}\,T^{-1}\,{\mbox{cm}}} 電子迴轉半徑: r e = v T e / ω c e = 2.38 T e 1 / 2 B − 1 cm {\displaystyle r_{e}=v_{Te}/\omega _{ce}=2.38\,T_{e}^{1/2}B^{-1}\,{\mbox{cm}}} 離子迴轉半徑: r i = v T i / ω c i = 1.02 × 10 2 μ 1 / 2 Z − 1 T i 1 / 2 B − 1 cm {\displaystyle r_{i}=v_{Ti}/\omega _{ci}=1.02\times 10^{2}\,\mu ^{1/2}Z^{-1}T_{i}^{1/2}B^{-1}\,{\mbox{cm}}} 電漿吸收深度 c / ω p e = 5.31 × 10 5 n e − 1 / 2 cm {\displaystyle c/\omega _{pe}=5.31\times 10^{5}\,n_{e}^{-1/2}\,{\mbox{cm}}} 德拜長度 λ D = ( k T / 4 π n e 2 ) 1 / 2 = 7.43 × 10 2 T 1 / 2 n − 1 / 2 cm {\displaystyle \lambda _{D}=(kT/4\pi ne^{2})^{1/2}=7.43\times 10^{2}\,T^{1/2}n^{-1/2}\,{\mbox{cm}}} 電子平均速率: v T e = ( k T e / m e ) 1 / 2 = 4.19 × 10 7 T e 1 / 2 cm/s {\displaystyle v_{Te}=(kT_{e}/m_{e})^{1/2}=4.19\times 10^{7}\,T_{e}^{1/2}\,{\mbox{cm/s}}} 離子平均速率 : v T i = ( k T i / m i ) 1 / 2 = 9.79 × 10 5 μ − 1 / 2 T i 1 / 2 cm/s {\displaystyle v_{Ti}=(kT_{i}/m_{i})^{1/2}=9.79\times 10^{5}\,\mu ^{-1/2}T_{i}^{1/2}\,{\mbox{cm/s}}} 離子聲速 c s = ( γ Z k T e / m i ) 1 / 2 = 9.79 × 10 5 ( γ Z T e / μ ) 1 / 2 cm/s {\displaystyle c_{s}=(\gamma ZkT_{e}/m_{i})^{1/2}=9.79\times 10^{5}\,(\gamma ZT_{e}/\mu )^{1/2}\,{\mbox{cm/s}}} 阿爾文速率: v A = B / ( 4 π n i m i ) 1 / 2 = 2.18 × 10 11 μ − 1 / 2 n i − 1 / 2 B cm/s {\displaystyle v_{A}=B/(4\pi n_{i}m_{i})^{1/2}=2.18\times 10^{11}\,\mu ^{-1/2}n_{i}^{-1/2}B\,{\mbox{cm/s}}} 質子質量/電子質量的根號 ( m e / m p ) 1 / 2 = 2.33 × 10 − 2 = 1 / 42.9 {\displaystyle (m_{e}/m_{p})^{1/2}=2.33\times 10^{-2}=1/42.9\,} 德拜球裡的粒子數量 ( 4 π / 3 ) n λ D 3 = 1.72 × 10 9 T 3 / 2 n − 1 / 2 {\displaystyle (4\pi /3)n\lambda _{D}^{3}=1.72\times 10^{9}\,T^{3/2}n^{-1/2}} 阿爾文速率/光速 v A / c = 7.28 μ − 1 / 2 n i − 1 / 2 B {\displaystyle v_{A}/c=7.28\,\mu ^{-1/2}n_{i}^{-1/2}B} 電子電漿/電子等離子體頻率 ω p e / ω c e = 3.21 × 10 − 3 n e 1 / 2 B − 1 {\displaystyle \omega _{pe}/\omega _{ce}=3.21\times 10^{-3}\,n_{e}^{1/2}B^{-1}} 離子電漿/離子等離子體頻率 ω p i / ω c i = 0.137 μ 1 / 2 n i 1 / 2 B − 1 {\displaystyle \omega _{pi}/\omega _{ci}=0.137\,\mu ^{1/2}n_{i}^{1/2}B^{-1}}