窄带隙半导体

窄带隙半导体是指带隙小于0.5 eV，或红外吸收截止波长超过2.5微米的半导体材料。更广义的定义包括带隙小于硅（1.1 eV）的所有半导体。 现代太赫兹、红外 和热成像 技术均基于此类半导体。 窄带隙材料应用于红外探测器和红外领域，以实现卫星遥感、远程通讯的光子集成电路 和无人驾驶车辆的Li-Fi系统 。这种半导体材料也是太赫技术的材料基础，其应用包括探测隐藏武器的安全监视系统 、太赫兹断层扫描的安全医疗和工业成像系统 ，以及介电尾场加速器 。 此外，嵌入窄带隙半导体的热光伏（英语：Thermophotovoltaic energy conversion） 发电可讲传统太阳能发电系统中浪费的部分能量转化为可用电能，该部分能量占据了太阳光谱的49%左右 。 航天和深海应用，以及真空物理装置中，常使用窄带隙半导体来实现超低温冷却。 在尖端研发中，窄带隙半导体被制成纳米材料，其强烈的电子空穴耦合会与增加的量子限制效应相互作用，这给描述和设计带来了特殊的挑战。麻省理工学院的兰克斯提出的“兰克斯模型”扩展了k·p 方法来解决电子能带边缘的非抛物线性问题，但又缺乏精确性。 使用超级计算机利用密度泛函理论进行第一性原理计算，虽然可以得到更精确的能带曲率，但其对算力和算时的要求都太大。 唐爽和崔瑟豪斯夫人提出的“唐-崔瑟豪斯理论” 引入了一种低维多带迭代法，以渐进式方法解决了这个问题，并得到了通用汽车的数据支持。 半导体材料清单 宽带隙半导体 Li, Xiao-Hui. Narrwo-Bandgap Materials for Optoelectronics Applications. Frontiers of Physics. 2022, 17: 13304 [2023-08-04]. doi:10.1007/s11467-021-1055-z. （原始内容存档于2023-08-04）.  Chu, Junhao; Sher, Arden. Physics and Properties of Narrow Gap Semiconductors. Springer. [2023-08-04]. 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