半导体材料

半导体材料是一类固体材料，其導電性介于导体和绝缘体之间，屬於半導體。 1833年，英國的法拉第發現硫化銀是半導體材料，因為它的電阻隨著溫度上升而降低。 1874年，德國的布勞恩注意到硫化物的電導率與所加電壓的方向有關，這就是半導體的整流作用。 1947年12月23日，巴丁与布拉坦進一步使用點接觸電晶體製作出一個語音放大器，電晶體正式發明。 1958年9月12日，美國的基尔比，細心地切了一塊鍺作為電阻，再用一塊pn接面做為電容，製造出一個震盪器電路。 以原料分为： 元素半导体材料：以单一元素组成的半导体，属于这一材料的有硼、金刚石、锗、硅、灰锡、锑、硒、碲等，其中以锗、硅、锡研究较早，制备工艺相对成熟。 复合半导体材料：由两种或两种以上无机物化合成的半导体，种类繁多，已知的二元化合物就有数百种。 三五半导体：由Ⅲ族元素（如Al、Ga、In）和Ⅴ族元素（如P、As、Sb）组成，比如砷化鎵（GaAs）；它们都具有闪锌矿结构，在应用方面仅次于Ge、Si。 二六半导体：ⅡB族元素（如Zn、Cd、Hg）和Ⅵ族元素（如S、Se、Te）組成的化合物，是一些重要的光电材料；硫化鋅（ZnS）、碲化鎘（CdTe）、碲化汞（HgTe）具有闪锌矿结构。 四四半导体：碳化矽（SiC）和矽鍺合金都具有闪锌矿结构。 有機半導體：同時是有機物質的半導體。 有機半導體 NSM Archive - Physical Properties of Semiconductors. www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.  Safa O. Kasap; Peter Capper. Springer handbook of electronic and photonic materials. Springer. 2006: 54,327. ISBN 978-0-387-26059-4.  S.H. Groves, C.R. Pidgeon, A.W. Ewald, R.J. Wagner Journal of Physics and Chemistry of Solids, Volume 31, Issue 9, September 1970, Pages 2031-2049 (1970). Interband magnetoreflection of α-Sn. Tin, Sn. www.matweb.com. [2024-02-20]. （原始内容存档于2017-12-01）.  Abass, A. K.; Ahmad, N. H. Indirect band gap investigation of orthorhombic single crystals of sulfur. Journal of Physics and Chemistry of Solids. 1986, 47 (2): 143. Bibcode:1986JPCS...47..143A. doi:10.1016/0022-3697(86)90123-X.  Todorov, T. Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material. Nature Communications. 2017, 8 (1): 682. Bibcode:2017NatCo...8..682T. PMC 5613033 . PMID 28947765. S2CID 256640449. doi:10.1038/s41467-017-00582-9.  Dorf, Richard. The Electrical Engineering Handbook. CRC Press. 1993: 2235–2236. ISBN 0-8493-0185-8.  Evans, D A; McGlynn, A G; Towlson, B M; Gunn, M; Jones, D; Jenkins, T E; Winter, R; Poolton, N R J. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy (PDF). Journal of Physics: Condensed Matter. 2008, 20 (7): 075233 [2024-02-20]. Bibcode:2008JPCM...20g5233E. S2CID 52027854. doi:10.1088/0953-8984/20/7/075233. hdl:2160/612 . （原始内容存档 (PDF)于2023-05-24）.  Boron nitride nanotube. www.matweb.com. [2024-02-20]. （原始内容存档于2024-02-20）.  Madelung, O. Semiconductors: Data Handbook. Birkhäuser. 2004: 1 [2024-02-20]. ISBN 978-3-540-40488-0. （原始内容存档于2023-05-16）.  Claus F. Klingshirn. Semiconductor optics. Springer. 1997: 127. ISBN 978-3-540-61687-0.  Lead(II) sulfide. www.matweb.com.  Patel, Malkeshkumar; Indrajit Mukhopadhyay; Abhijit Ray. Annealing influence over structural and optical properties of sprayed SnS thin films. Optical Materials. 26 May 2013, 35 (9): 1693–1699. Bibcode:2013OptMa..35.1693P. doi:10.1016/j.optmat.2013.04.034.  Burton, Lee A.; Whittles, Thomas J.; Hesp, David; Linhart, Wojciech M.; Skelton, Jonathan M.; Hou, Bo; Webster, Richard F.; O'Dowd, Graeme; Reece, Christian; Cherns, David; Fermin, David J.; Veal, Tim D.; Dhanak, Vin R.; Walsh, Aron. Electronic and optical properties of single crystal SnS2: An earth-abundant disulfide photocatalyst. Journal of Materials Chemistry A. 2016, 4 (4): 1312–1318. doi:10.1039/C5TA08214E. hdl:10044/1/41359 .  Haacke, G.; Castellion, G. A. Preparation and Semiconducting Properties of Cd3P2. Journal of Applied Physics. 1964, 35 (8): 2484–2487. Bibcode:1964JAP....35.2484H. doi:10.1063/1.1702886.  Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.; Atwater, Harry A. Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2 (PDF). Applied Physics Letters. 2009, 95 (11): 112103 [2024-02-20]. Bibcode:2009ApPhL..95k2103K. ISSN 0003-6951. doi:10.1063/1.3225151. （原始内容存档 (PDF)于2022-11-22）.  Syrbu, N. N.; Stamov, I. G.; Morozova, V. I.; Kiossev, V. K.; Peev, L. G. Energy band structure of Zn3P2, ZnP2 and CdP2 crystals on wavelength modulated photoconductivity and photoresponnse spectra of Schottky diodes investigation. Proceedings of the First International Symposium on the Physics and Chemistry of II-V Compounds. 1980: 237–242.  Botha, J. R.; Scriven, G. J.; Engelbrecht, J. A. A.; Leitch, A. W. R. Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2. Journal of Applied Physics. 1999, 86 (10): 5614–5618. Bibcode:1999JAP....86.5614B. doi:10.1063/1.371569.  Rahimi, N.; Pax, R. A.; MacA. Gray, E. Review of functional titanium oxides. I: TiO2 and its modifications. Progress in Solid State Chemistry. 2016, 44 (3): 86–105. doi:10.1016/j.progsolidstchem.2016.07.002.  O. Madelung; U. Rössler; M. Schulz (编). Cuprous oxide (Cu2O) band structure, band energies. Landolt-Börnstein – Group III Condensed Matter. Numerical Data and Functional Relationships in Science and Technology. Landolt-Börnstein - Group III Condensed Matter. 41C: Non-Tetrahedrally Bonded Elements and Binary Compounds I. 1998: 1–4. ISBN 978-3-540-64583-2. doi:10.1007/10681727_62.  Shin, S.; Suga, S.; Taniguchi, M.; Fujisawa, M.; Kanzaki, H.; Fujimori, A.; Daimon, H.; Ueda, Y.; Kosuge, K. Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO 2, V 6 O 13, and V 2 O 3. Physical Review B. 1990, 41 (8): 4993–5009. Bibcode:1990PhRvB..41.4993S. PMID 9994356. doi:10.1103/physrevb.41.4993.  Sinha, Sapna. Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene. Nature Communications. 2020, 11 (1): 823. Bibcode:2020NatCo..11..823S. PMC 7010709 . PMID 32041958. S2CID 256633781. doi:10.1038/s41467-020-14481-z.  Kobayashi, K.; Yamauchi, J. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. Physical Review B. 1995, 51 (23): 17085–17095. Bibcode:1995PhRvB..5117085K. PMID 9978722. doi:10.1103/PhysRevB.51.17085.  Arora, Himani. Charge transport in two-dimensional materials and their electronic applications (PDF). Doctoral Dissertation. 2020 [July 1, 2021]. （原始内容存档 (PDF)于2024-01-05）.  B. G. Yacobi Semiconductor materials: an introduction to basic principles （页面存档备份，存于互联网档案馆） Springer, 2003, ISBN 0-306-47361-5 Kumar, Manish; Sharma, Anjna; Maurya, Indresh Kumar; Thakur, Alpana; Kumar, Sunil. Synthesis of ultra small iron oxide and doped iron oxide nanostructures and their antimicrobial activities. Journal of Taibah University for Science. 2019, 13: 280–285 [2024-02-20]. S2CID 139826266. doi:10.1080/16583655.2019.1565437 . （原始内容存档于2023-05-11）.  Synthesis and Characterization of Nano-Dimensional Nickelous Oxide (NiO) Semiconductor S. Chakrabarty and K. Chatterjee Synthesis and Room Temperature Magnetic Behavior of Nickel Oxide Nanocrystallites Kwanruthai Wongsaprom*[a] and Santi Maensiri [b] Arsenic sulfide (As2S3). [2024-02-20]. （原始内容存档于2018-10-07）.  Temperature Dependence of Spectroscopic Performance of Thallium Bromide X- and Gamma-Ray Detectors. [2024-02-20]. （原始内容存档于2019-06-18）.  HODES; Ebooks Corporation. Chemical Solution Deposition of Semiconductor Films. CRC Press. 8 October 2002: 319– [28 June 2011]. ISBN 978-0-8247-4345-1.  Arumona Edward Arumona; Amah A N. Density Functional Theory Calculation of Band Gap of Iron (II) disulfide and Tellurium. Advanced Journal of Graduate Research. 2018, 3: 41–46. doi:10.21467/ajgr.3.1.41-46 .  Prashant K Sarswat; Michael L Free. Enhanced Photoelectrochemical Response from Copper Antimony Zinc Sulfide Thin Films on Transparent Conducting Electrode. International Journal of Photoenergy. 2013, 2013: 1–7. doi:10.1155/2013/154694 .  Trukhan, V. M.; Izotov, A. D.; Shoukavaya, T. V. Compounds and solid solutions of the Zn-Cd-P-As system in semiconductor electronics. Inorganic Materials. 2014, 50 (9): 868–873. S2CID 94409384. doi:10.1134/S0020168514090143.  Borisenko, Sergey; et al. Experimental Realization of a Three-Dimensional Dirac Semimetal. Physical Review Letters. 2014, 113 (27603): 027603. Bibcode:2014PhRvL.113b7603B. PMID 25062235. S2CID 19882802. arXiv:1309.7978 . doi:10.1103/PhysRevLett.113.027603.  Cisowski, J. Level Ordering in II3-V2 Semiconducting Compounds. Physica Status Solidi B. 1982, 111 (1): 289–293. Bibcode:1982PSSBR.111..289C. doi:10.1002/pssb.2221110132.