Title: Laser annealing of semiconductors /
Authors: Poate, J. M.; Mayer, James W.,
Date: 1982
Publisher: Academic Press,
Physical description: xi, 564 p. : ill. ; 24 cm.
Language: English
LC classification: T
Contents: Introduction / J.M. Poate and James W. Mayer -- Crystallization processes / Frans Spaepen and David Turnbull -- Fundamentals of energy deposition / Martin F. von Allmen -- Heat flow calculations / Pietro Baeri and Salvatore Ugo Campisano -- Supersaturated alloys, solute trapping, and zone refining / C.W. White, B.R. Appleton, and S.R. Wilson -- Microstructure and topography / A.G. Cullis -- Epitaxy by pulsed annealing of ion-implanted silicon / Gaetano Foti and Emanuele Rimini -- Epitaxy of deposited si / J.M. Poate and J.C. Bean -- Surface properties of laser-annealed semiconductors / D.M. Zehner and C.W. White -- Solid phase regrowth / J.F. Gibbons and T.W. Sigmon -- Compound semiconductors / J.S. Williams -- Silicides and metastable phases / Martin F. von Allmen and S.S. Lau -- Factors influencing applications / C. Hill.
Subject headings (LCSH): Semiconductor industry--Laser use in--Congresses.; Semiconductors--Congresses.; Semiconductors.