Fluorwasserstoff
Cleanrooms provide passive cleanliness but the wafers are also actively cleaned before every critical step. RCA-1 clean in ammonia-peroxide solution removes organic contamination and particles; RCA-2 cleaning in hydrogen chloride-peroxide mixture removes metallic impurities. Sulfuric acid-peroxide mixture (a.k.a. Piranha) removes organics. Hydrogen fluoride removes native oxide from silicon surface. These are all wet cleaning steps in solutions. Dry cleaning methods include oxygen and argon plasma treatments to remove unwanted surface layers, or hydrogen bake at elevated temperature to remove native oxide before epitaxy. Pre-gate cleaning is the most critical cleaning step in CMOS fabrication: it ensures that the ca. 2 nm thick oxide of a MOS transistor can be grown in an orderly fashion. Oxidation, and all high temperature steps are very sensitive to contamination, and cleaning steps must precede high temperature steps.