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The planar process was invented by Jean Hoerni, with his first patent filed in May 1959. The planar process was critical in the invention of Silicon Integrated circuit by Robert Noyce. Noyce built on Hoerni's work with his conception of an integrated circuit, which added a layer of metal to the top of Hoerni's basic structure to connect different components, such as transistors, capacitors, or resistors, located on the same piece of silicon. The planar process provided a powerful way of implementing an integrated circuit that was superior to earlier conceptions of the device. With Noyce, Jack Kilby from Texas Instruments is usually credited with the invention of the integrated circuit, but Kilby's IC was based on Germanium. As it turns out, Silicon ICs have numerous advantages over germanium. The name "Silicon Valley" refers to this silicon.