ثنائي أكسيد السيليكون
The earliest gate dielectric used in a field-effect transistor was silicon dioxide (SiO2). The silicon and silicondioxide surface passivation process was developed by Egyptian engineer Mohamed M. Atalla at Bell Labs during the late 1950s, and then used in the first MOSFETs (metal-oxide-semiconductor field-effect transistors). Silicon dioxide remains the standard gate dielectric in MOSFET technology.