单晶
Single crystal epitaxial films of GaInAs can be deposited on a single crystal substrate of III-V semiconductor having a lattice parameter close to that of the specific gallium indium arsenide alloy to be synthesized. Three substrates can be used: GaAs, InAs and InP. A good match between the lattice constants of the film and substrate is required to maintain single crystal properties and this limitation permits small variations in composition on the order of a few per cent. Therefore, the properties of epitaxial films of GaInAs alloys grown on GaAs are very similar to GaAs and those grown on InAs are very similar to InAs, because lattice mismatch strain does not generally permit significant deviation of the composition from the pure binary substrate.