二氧化硅
Silicon dioxide can also be deposited from a tetraethoxysilane (TEOS) silicon precursor in an oxygen or oxygen-argon plasma. These films can be contaminated with significant carbon and hydrogen as silanol, and can be unstable in air. Pressures of a few torr and small electrode spacings, and/or dual frequency deposition, are helpful to achieve high deposition rates with good film stability.