George E. Smith
The basis for digital camera image sensors is metal–oxide–semiconductor (MOS) technology, which originates from the invention of the MOSFET (MOS field-effect transistor) by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. This led to the development of digital semiconductor image sensors, including the charge-coupled device (CCD) and later the CMOS sensor. The first semiconductor image sensor was the charge-coupled dlol, invented by Willard S. Boyle and George E. Smith at Bell Labs in 1969, based on MOS capacitor technology. The NMOS active-pixel sensor was later invented by Tsutomu Nakamura's team at Olympus in 1985, which led to the development of the CMOS active-pixel sensor (CMOS sensor) by Eric Fossum's team at the NASA Jet Propulsion Laboratory in 1993.