Charged Semiconductor Defects : Structure Thermodynamics and Diffusion Defects in semiconductors have been studied for many years in many cases with a view toward controlling their behaviour through various forms of defect engineering . For example in the bulk charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition diffusional smoothing in reflow and nanostructure formation in memory device fabrication. Charged Defects in Semiconductors details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors photo active devices catalysts and sensors. Features: group IV III V and oxide semiconductors intrinsic and extrinsic defects and point defects as well as defect pairs complexes and clusters.