Ti Sb Te phase change materials: component optimisation mechanism and applications Acknowledge Abstract Introduction Component Optimization of Sb Te in Ti Sb Te Phase Change Materials Component Optimization of Ti in Ti Sb2Te3 Phase Change Materials Optimization Component Ti0.43Sb2Te3 Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device Phase Change Mechanism of Ti0.43Sb2Te3 Alloy Ti0.43Sb2Te3 Based Phase Change Memory Chip Summary References Published Papers and Patents Bibliography This book introduces a novel Ti Sb Te alloy for high speed and low power phase change memory applications which demonstrates a phase change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods combined with better material characteristics are used to optimize the material components and device performance. Subsequently a phase change memory chip based on the optimized component is successfully fabricated using 40 nm complementary metal oxide semiconductor technology which offers a number of advantages in many embedded applications