Growth structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces Gate dielectric dielectric constant stoichiometry leakage current hygroscopic crystalline flat band voltage hysteresis barium silicates (Ba2SiO4). Gatedielektrikum Dielektrizitätskonstante Stöchiometrie Leckstrom hygroskopisch kristallin Flachbandspannung Hysterese Barium Silikate