Simulation of transport in nanodevices Linear current voltage pattern has been and continues to be the basis for characterizing evaluating performance and designing integrated circuits but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions quantum effects transform the carrier statistics. In the high electric field the collision free ballistic transform is predicted while in low electric field the transport remains predominantly scattering limited. In a micro nano circuit even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity Introduction: nanoelectronics quantum mechancis and solid state physics Philippe Dollfus and François Triozon Electronic transport: electrons phonons and their coupling within the density functional theory Nathalie Vast Jelena Sjakste Gaston Kane and Virginie Trinite Electronic band structure: empirical pseudopotentials k p and tight binding methods Denis Rideau François Triozon and Philippe Dollfus Relevant semiempirical potentials for phonon properties Sebastian Volz Introduction to quantum transport François Triozon Stephan Roche and Yann Michel Niquet Non equilibrium greens fuction formalism Michel Lannoo and Marc Bescond Electron devices simulation with Bohmian trajectories Guillermo Albareda Damiano Marian Abdelilah Benali Alfronso Alarcon Simeon Moises and Xavier Oriols The Monte Carlo method for Wigner and Boltzmann transport equations Philippe Dollfus Damien Querlioz and Gerome Saint Martin