Fundamentals of modern VLSI devices A thoroughly updated third edition of a classic and widely adopted text perfect for practical transistor design and in the classroom. Covering a variety of recent developments the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices as well as factors affecting performance. Containing around 25% new material coverage has been expanded to include high k gate dielectrics metal gate technology strained silicon mobility non GCA (Gradual Channel Approximation) modelling of MOSFETs shortchannel FinFETS and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience and numerous additional end of chapter homework exercises (+30%) are included to engage students with real world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses and for practicing silicon device professionals in the semiconductor industry