Magnetic memory technology : spin transfer torque MRAM and beyond This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then it goes one step forward to discuss electron spin. Following the above background discussion readers are taught the physics of magnetic tunnel junction device (MTJ) the work horse of MRAM for memory applications. At the end of this book the author gives a comparison of emerging non volatile memories (PCM ReRAM FeRAM and MRAM). The author also explores MRAMs unique quality among emerging memories in that is the only one in which the atoms in the device do not move when switching states. This property makes it the most reliable and low power