Extreme temperature and harsh environment electronics : physics technology and applications 18. Radiation effects on electronics 18.1 Introduction 18.2 Sources of radiation 18.3 Types of radiation effects 18.4 Total dose effects 18.5 Single event effects 18.6 Discussion and conclusions 17. Preventing chemical corrosion in electronics 17.1 Introduction 17.2 Sulfidic and oxidation corrosion from environmental gases 17.3 Electrolytic ion migration and galvanic coupling 17.4 Internal corrosion of integrated and printed circuit board circuits 17.5 Fretting corrosion 17.6 Tin whisker growth 17.7 Minimizing corrosion risks 17.8 Further protection methods 17.9 Hermetic packaging 17.10 Hermetic glass passivation of discrete high voltage diodes 17.11 Discussion and conclusions Part I Extreme temperature electronics 3. Temperature effects on semiconductors 3.1 Introduction 3.2 The energy bandgap 3.3 Intrinsic carrier concentration 3.4 Carrier saturation velocity 3.5 Electrical conductivity of semiconductors 3.6 Free carrier concentration in semiconductors 3.7 Incomplete ionization and carrier freeze out 3.8 Different ionization regimes 3.9 Mobilities of charge carriers in semiconductors 3.10 Equations for mobility variation with temperature 3.11 Mobility in MOSFET inversion layers at low temperatures 3.12 Carrier lifetime 3.13 Wider bandgap semiconductors than silicon 3.14 Discussion and conclusions Electronic devices and circuits are employed by a range of industries in testing conditions from extremes of high or low temperature in chemically corrosive environments subject to shock and vibration or exposure to radiation. This book describes the diverse measures necessary to make electronics capable of coping with such situations as well as to gainfully exploit any new phenomena that take place only under these conditions Part II Harsh environment electronics 15. Humidity and contamination effects on electronics 15.1 Introduction 15.2 Absolute and relative humidity 15.3 Relation between humidity contamination and corrosion 15.4 Metals and alloys used in electronics 15.5 Humidity triggered corrosion mechanisms 15.6 Discussion and conclusions 6. The influence of temperature on the performance of silicon germanium heterojunction bipolar transistors 6.1 Introduction 6.2 HBT fabrication 6.3 Current gain and forward transit time of Si Si1−xGex HBT 6.4 Comparison between Si BJT and Si SiGe HBT 9. Gallium nitride electronics for very hot environments 9.1 Introduction 9.2 Intrinsic temperature of gallium nitride 9.3 Growth of the GaN epitaxial layer 9.4 Doping of GaN 9.5 Ohmic contacts to GaN 9.6 Schottky contacts to GaN 9.7 GaN MESFET model with hyperbolic tangent function 9.8 AlGaN GaN HEMTs 9.9 InAlN GaN HEMTs 9.10 Discussion and conclusions 16. Moisture and waterproof electronics 16.1 Introduction 16.2 Corrosion prevention by design 16.3 Parylene coatings 16.4 Superhydrophobic coatings 16.5 Volatile corrosion inhibitor coatings 1.6 Silicones 16.7 Discussion and conclusions 13. Superconductor based microwave circuits operating at liquid nitrogen temperatures 13.1 Introduction 13.2 Substrates for microwave circuits 13.3 HTS thin film materials 13.4 Fabrication processes for HTS microwave circuits 13.5 Design and tuning approaches for HTS filters 13.6 Cryogenic packaging 13.7 HTS bandpass filters for mobile telecommunications 13.8 HTS JJ based frequency down converter 13.9 Discussion and conclusions 2. Operating electronics beyond conventional limits 2 1 Life threatening temperature imbalances on Earth and other planets 2.2 Temperature disproportions for electronics 2.3 High temperature electronics 2.4 Low temperature electronics 2.5 The scope of extreme temperature and harsh environment electronics 2.4 Discussion and conclusions 8. Silicon carbide electronics for hot environments 8.1 Introduction 8.2 Intrinsic temperature of silicon carbide 8.3 Silicon carbide single crystal growth 8.4 Doping of silicon carbide 8.5 Surface oxidation of silicon dioxide 8.6 Schottky and ohmic contacts to silicon carbide 8.7 SiC p n diodes 8.8 SiC Schottky barrier diodes 8.9 SiC JFETs 8.10 SiC bipolar junction transistors 8.11 SiC MOSFETs 8.12 Discussion and conclusions 4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits 4 1 Properties of silicon 4.2 Intrinsic temperature of silicon 4.3 Recapitulating single crystal silicon wafer technology 4.4 Examining temperature effects on bipolar devices 4.5 Bipolar analog circuits in the 25 °C to 300 °C range 4.6 Bipolar digital circuits in the 25 °C to 340 °C range 4.7 Discussion and conclusions 20. Vibration tolerant electronics 20.1 Vibration is omnipresent 20.2 Random and sinusoidal vibrations 20.3 Countering vibration effects 20.4 Passive and active vibration isolators 20.5 Theory of passive vibration isolation 20.6 Mechanical spring vibration isolators 20.7 Air spring vibration isolators 20.8 Wire rope isolators 20.9 Elastomeric isolators 20.10 Negative stiffness isolators 20.11 Active vibration isolators 20.12 Discussion and conclusions 14. High temperature superconductor based power delivery 14.1 Introduction 14.2 Conventional electrical power transmission 14.3 HTS wires 14.4 HTS cable designs 14.5 HTS fault current limiters 14.6 HTS transformers 14.7 Discussion and conclusions 12. Superconductive electronics for ultra cool environments 12 1 Introduction 12.2 Superconductivity basics 12.3 Josephson junction 12.4 Inverse AC Josephson effect: Shapiro steps 12.5 Superconducting quantum interference devices 12.6 Rapid single flux quantum logic 12.7 Discussion and conclusions 19. Radiation hardened electronics 19.1 The meaning of radiation hardening 19.2 Radiation hardening by process (RHBP) 19.3 Radiation hardening by design 19.4 Discussion and Conclusions 5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits 5 1 Introduction 5.2 Threshold voltage of an n channel enhancement mode MOSFET 5.3 On resistance (RDS(ON)) of a double diffused vertical MOSFET 5.4 Transconductance (gm) of a MOSFET 5.5 BVDSS and IDSS of a MOSFET 5.6 Zero temperature coefficient biasing point of MOSFET 5.7 Dynamic response of a MOSFET 5.8 MOS analog circuits in the 25 °C to 300 °C range 5.9 Digital CMOS circuits in −196°C to 270 °C range Preface Acknowledgements About this book Author biography Abbreviations acronyms chemical symbols and mathematical notation Roman alphabet symbols Greek other symbols 1. Introduction and overview 1.1 Reasons for moving away from normal practices in electronics 1.2 Organization of the book 1.3 Temperature effects 1.4. Harsh environment effects 1.5 Discussion and conclusions 10. Diamond electronics for ultra hot environments 10.1 Introduction 10.2 Intrinsic temperature of diamond 10.3 Synthesis of diamond 10.4 Doping of diamond 10.5 A diamond p n junction diode 10.6 Diamond Schottky diode 10.7 Diamond BJT operating at <200 °C 10.8 Diamond MESFET 10.9 Diamond JFET 10.10 Diamond MISFET 10.11 Discussion and conclusions 7 The temperature sustaining capability of gallium arsenide electronics 7.1 Introduction 7.2 The intrinsic temperature of GaAs 7.3 Growth of single crystal gallium arsenide 7.4 Doping of GaAs 7.5 Ohmic contacts to GaAs 7.6 Schottky contacts to GaAs 7.7 Commercial GaAs device evaluation in the 25 °C to 400 °C temperature range 7.8 Structural innovations for restricting the leakage current of GaAs MESFET up to 300 °C 7.9 Won et al threshold voltage model for a GaAs MESFET 7.10 The high temperature electronic technique for enhancing the performance of MESFETs up to 300 °C 7.11 The operation of GaAs complementary heterojunction FETs from 25 °C to 500 °C 7.12 GaAs bipolar transistor operation up to 400 °C 7.13 A GaAs based HBT for applications up to 350 °C 7.14 AlxGaAs1−x GaAs HBT 7.15 Discussion and conclusions 11. High temperature passive components interconnectionsand packaging 11.1 Introduction 11.2 High temperature resistors 11.3 High temperature capacitors 11.4 High temperature magnetic cores and inductors 11.5 High temperature metallization 11.6 High temperature packaging 11.7 Discussion and conclusions