Electronic properties of semiconductor interfaces : with 17 tables Almost all semiconductor devices contain metal semiconductor insulator semiconductor insulator metal and or semiconductor semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interfaceinduced gap states (IFIGS) as a unifying theme Mönch explains the band structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave function tails of electron states which overlap a semiconductor band gap exactly at the interface so they originate from the quantum mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface bonds and that the charge transfer across the interface may be modeled by generalizing Paulings electronegativity concept. The IFIGS and electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well characterized Schottky contacts and semiconductor heterostructures respectively. TOC:Introduction. Depletion Layer. Determination of Barrier Heights and Offsets. Laterally Inhomogeneous Schottky Contacts. The IFIGS and Electronegativity Theory. The MIGS and Electronegativity Concept: Experiment and Theory. First Principles Calculations of Barrier Heights and Valence Band Offsets. Temperature and Pressure Effects. Barrier Heights and Extrinsic Interface Defects. Extrinsic Interface Dipoles. Ohmic Contacts