Strain engineered MOSFETs This book brings together new developments in the area of spin engineered MOSFETs using high mobility substrates such as SIGe strained Si germanium on insulator and III V semiconductors. The authors cover the materials aspects principles design fabrication and applications of advanced devices. They present a full TCAD methodology for strain engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization