Authors: Yu Geng | Chao Chen | Kuanglei Chen | Xiankun Zhang | Zheng Zhang | Yue Zhang
Source: Chinese Science Bulletin (Chinese Version) (article, 2023-08-01)
Field: Materials Science — Materials Chemistry

与硅基技术兼容的二维过渡金属硫族化合物电子器件 <p indent="0mm">For over half a century, Moore’s Law has successfully promoted the deep integration of semiconductor science, industrial technology, and social capital, stimulating the rapid development of the integrated circuit industry and accelerating the progress of human beings from the Information Age to the Artificial Intelligence Age. However, with the advent of the miniature limit of transistor size, integrated circuits face great challenges in achieving the increasing demands for high integration and high data processing capabilities through the strategy of directly reducing channel dimensions. As the dimensions of transistors approach their physical limits, traditional silicon-based channel materials (such as silicon and germanium, etc.) have experienced challenges such as declining electrical performance and rapidly increasing leakage currents, leading to difficulties in improving the data processing capabilities of integrated circuits and a sharp increase in power consumption. As a result, the integrated circuit industry has entered the post-Moore’s Law era and urgently needs to find new semiconductor materials to further advance the semiconductor industry. Two-dimensional (2D) transition metal dichalcogenides (TMDCs) materials have excellent physicochemical properties, attracting widespread attention from researchers in the integrated circuit field. Firstly, 2D-TMDCs materials have an ultra-thin layered structure similar to graphene, with a smooth surface and no dangling bonds, which can reduce scattering in the transport of charge carriers and effectively suppress the short-channel effects caused by transistor size miniaturization. Secondly, due to their unsuspended bond surfaces, 2D-TMDCs can break through the traditional material lattice-matching limitations and form van der Waals heterostructures through stacking, which is advantageous for addressing the challenging issue of performance degradation caused by lattice mismatch in conventional heterostructures. In addition, most 2D-TMDCs semiconductor materials have a moderate band gap of <sc>1–2 eV,</sc> which is conducive to the development of low-power electronic devices. It is worth mentioning that, compared to completely replacing silicon, combining 2D-TMDCs devices with mature silicon-based technology and high-performance silicon-based devices, namely developing a compatible route with silicon-based technology, is more feasible and cost-effective for the industrialization of 2D-TMDCs. Currently, with the help of traditional silicon-based technology, significant progress has been made in the controllable fabrication of wafer-scale 2D-TMDCs transistor arrays and logic gate circuit arrays, which preliminarily validates the feasibility of the compatible industrialization route with silicon-based technology. Based on this progress, the 2021 International Roadmap for Devices and Systems (IRDS) explicitly states that 2D-TMDCs materials will be the key materials for the next generation of semiconductor devices, and predicts that they will be integrated with traditional silicon-based materials for industrial manufacturing by 2028. Therefore, establishing a compatible route with silicon-based technology is a necessary prerequisite for the industrialization of 2D-TMDCs integrated circuits. In summary, this review introduces the structural characteristics and performance advantages of 2D-TMDCs materials, as well as their potential applications in integrated circuits in the post-Moore’s Law era. It also summarizes the key scientific issues, research progress, and future research directions in 2D-TMDCs electronic devices, and analyzes the comprehensive challenges in the process of industrial application of 2D-TMDCs integrated circuits. Computer science 2D Materials and Applications ; Graphene research and applications ; MXene and MAX Phase Materials