izzako/sundanese-pixelgpt huggingface dataset:
Sadayana aya 9 RW tina 4 kampung nyaéta Kp
Cirengit, Babakan Bolang, Tanjung sareng Ciherang
Palih Wetan diwatesan ku walungan Cisangkuy anu ngawatesan sareng Ds
Tarajusari, palih kidul kawatesan ku Desa Kamasan Sareng Desa Kiangroke, Palih Kulon Kawatesa ku Desa Ciluncat, Sarta Palih kare kawatesa ku Desa Bojong kunci sareng Desa Rancatungku
Daerah dataran biasa anu proporsina kirang langkung 60 % tanah darat 40 % serang, dilingkung ku gunung
Aya fasilitas pendidikan tikawit TK/RA, SD/MI, SMP, SMA, anu pinunjul diantawisna RA sareng MI Persatuan Islam di Cirengit
ngarupikeun daerah agraris tatanen pare kelas 1, ogé ceket sareng pusat indutri tekstil cipeundeuy
Cicaléngka Wétan nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Babakanpeuteuy nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cicaléngka Kulon nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cikuya nyaéta salasahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Dampit nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Margaasih nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Nagrog nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Narawita nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Panénjoan nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Tanjungwangi nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ténjolaya nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Legenda jeung Sajarah
Wewengkon dayeuh Bandung kiwari, kirang langkung 6000 taun katompérnakeun masih mangrupa situ nu kabentuk alatan kabendung na, walungan Citarum ku aliran lava akibat bitu na gunung Tangkuban Parahu, minangka gambaran, situ Bandung purba lega na sakira ti Cicalengka di wétan dugikeun ka Padalarang di palih kulon kirang langkung 50 km,Ti bukit Dago di palih kalér dugikeun ka wates Soréang – Ciwidey di palih kidul,Situ
Soréang – Ciwidey di palih kidul,Situ Bandung ngawitan surud sakira 3000-4000 taun katompérnakeun, ku ayana keureutan sungé dina jurang jurang Sanghiang Tikoro (Rajamandala)
Desa Ténjolaya minangka désa nu aya di wewengkon administratif Kacamatan Cicalengka, nami Ténjolaya numutkeun legénda teu lésot tina hikayat lalampahan saurang Adipati Aria Wira Angun-angun minangka pangawasa wewengkon Bandung wétan mangsa harita,nalika anjeunna maluruh hakékat kahirupan ogé nalungtik sabab musababna aya wabah panyawat nu lumangsung harita
Adipati Aria Wira Angun-angun adalah masih keturunan dari Sang Manik Maya raja dari kerajaan Kendan yang berkuasa sejak 458 saka (536 M) sampai dengan 490 saka (568 M),setelah raja Sang Manik Maya wafat,beliau digantikan oleh putranya Suralim pada taun 490 saka (568 M),raja Suralim lebih mahir berperang dan banyak waktunya diabdikan sebagai senapati dan panglima Tarumanagara sehingga beliau bergelar Baladhika Ning Widyabala,kemudian ia digantikan
bergelar Baladhika Ning Widyabala,kemudian ia digantikan oleh putranya bernama Kandiawan dan raja Kandiawan mempunyai lima orang putra dan menjadikan sebagai penguasa daérah yang berda di wilayah kerajaan Kendan yakni Sedangkan Adipati Aria Wira Angun-angun adalah keturunan dari Wretikandayun entah generasi yang keberapa (tidak diketemukan data)
Perjalanan Adipati Aria Wira Angun-angun untuk mencari pemecahan masalah kehidupan dan wabah penyakit, diawali pada bulan syuro di mana beliau selalu mengadakan semedi di Gunung Mayit (sekarang Pasir Sangiang atau Pasir Candi berada di wilayah Desa Tenjolaya),perjalanan atau ngabaraga dilakukan dengan menelusuri pinggiran situ sebelah barat kemudian naik kéarah bukit anak gunung Geulis,bukit yang tidak terlalu tinggi akan tetapi mampu melihat sebagian wilayah Bandung
tetapi mampu melihat sebagian wilayah Bandung dan Sumedang,konon bukit itu dinamakan bukit Tenjolaya untuk kemudian sekarang dipakai nama kampung dan nama désa
Setelah melihat situasi yang ada Adipati melanjutkan perjalanan menuju gunung Mayit dengan menuruni bukit Tenjolaya hingga sampai di dataran yang cukup luas penuh dengan pohon lame,beristirahatlah Adipati di bawah pohon lame melepas penat seraya meminum air yang mengalir dari sungai kecil yang kemudian sungai kecil itu dinamakan Ciilat sedangkan tempat itu kemudian dinamakan Cilame dan dijadikeun nama kampung (sekarang wilayah RT.06 RW.01)
Adipati Aria Wira Angun-angun beserta rombongan kembali melanjutkan perjalanan mengambil arah kesebelah timur tibalah ditepi tanah tebing (gawir) yang cukup dalam sulit untuk dilalui,kemudian Adipati memerintahkan membuat jembatan penyeberangan dari pohon bambu dan pada saat diinjak jembatan itu naik turun karena batang bambunya lemah,untuk kemudian daérah itu dinamakan Cukang Lemah (sekarang wilayah RW.10)
Pada sore hari rombongan adipati sampailah di sebuah mata air di mana mata air itu keluar dari sela-sela tanah putih (tanah cadas),oleh Adipati mata air itu dinamakan air cicadas sedangkan diatas mata air cicadas terdapat pula mata air yang lebih besar,kala itu sedang muncul pelangi (katumbiri nutug leuwi) yang melingkari diatas mata air tersebut,Adipati menyuruh para selir yang waktu itu ikut dalam rombongan untuk
waktu itu ikut dalam rombongan untuk mandi di mata air itu dan kemudian mata air itu disebut Ciputri yang juga dijadikeun nama kampung (sekarang wilayah RT.03 RW.09)
Dan sekarang untuk mereka yang kawenehan (melihat) kéalam ghaib,konon suka melihat mahluk halus Ketring Manik Mayang Sunda (dewi penjaga kota Bandung nan jelita) sedang mandi
Sampailah rombongan Adipati ke kaki gunung Mayit,rombongan kemudian membuat tenda peristirahatan sedangkan Adipati didampingi dua hulubalang melanjutkan naik kepuncak gunung Mayit untuk melakukan ritual semedi
Menjelang pagi hari Adipati beserta dua hulubalang mengelilingi puncak ghunung Mayit,pada saat itulah Adipati melihat tanda kehidupan dibawah kaki gunung mayit sebuah perkampungan kecil di mana rakyatnya pada saat itu sedang mengadakan prosesi pemakaman massal,berujarlah Adipati kepada dua hulu balang “ Tenjo,kuandika itu aya pakampungan jeung tenjo loba jalma nu perlaya,mangkade lamun mulang urang nyimpang nyiur heula kaeta pakampungan “ ( Lihat olehmu itu
pakampungan “ ( Lihat olehmu itu ada perkampungan dan juga lihat banyak orang yang meninggal,apabila kita pulang mampir dulu ke perkampungan itu )
Konon dari situlah nama Kampung Tenjolaya (Tenjo Aya dan Tenjo Perlaya) yang kemudian dipakai sebagai nama désa,Desa Tenjolaya
Luas Desa Tenjolaya sebelum terjadi pemekaran dibatasi dari sebelah utara Desa Cimanggung,sebelah Timur Desa Cicalengka,sebelah selatan Desa Cicalengka dan sebelah barat Desa Bojong Jambu,sedangkan lokasi balai désa terletak dipertengahan wilayah désa yaitu di Kampung Warung Peuteuy dibelakang SD Tenjolaya I (sekarang),sedangkan kepala pemerintah désa (data yang diketahui),pada awalnya oleh Lurah Mama Moehammad Sanoesi sekitar pada taun 1901-1922,kemudian digantikan oleh H. Oemar Sodik pada taun
oleh H. Oemar Sodik pada taun 1923-1942,selanjutnya oleh Bandi sekitar taun 1943-1946,setelah berhenti beliau digantikan oleh Soemanta putra dari Lurah H. Oemar Sodik pada taun 1946-1949,kemudian pada taun 1949-1950 dijabat sementara oleh Wardi dan dari taun 1950-1964 dijabat oleh Eli Supiyat putra dari Lurah Soemanta dan pada saat kepemimpinan beliau balai Desa Tenjolaya dipindahkan ke kampung Kebon Kalapa atau Jalan Raya Cicalengka
Setelah berakhir masa jabatan Lurah Eli Supiyat digantikan juru tulisnya yaitu Mochmmad Mahdi pada taun 1965-1967,beliau meninggal sebelum masa jabatannya berakhir disebabkan kecelakaan lalu lintas,kemudian jabatan Lurah Tenjolaya dipegang oleh Endang Kasah dari taun 1967-1982 dan pada taun 1979 turun Undang-undang Nomor 5,tentang sebutan Lurah diganti menjadi Kepala Desa,selanjutnya pada tanggal 23 September 1982 Desa Tenjolaya dimekarkan dan Desa pemekaran disebut Desa Tenjolaya,sedangkan batas-batas
Desa pemekaran disebut Desa Tenjolaya,sedangkan batas-batas yang baru wilayah Desa Tenjolaya yaitu dari sebelah utara Desa Dampit,sebelah timur Desa Babakan Peuteuy,sebelah selatan Desa Cicalengka Kulon,dan dari sebelah barat Desa Tenjolaya
Kemudian balai Desa Tenjolaya setelah dimekarkan pindah ke Jl
kaptén Sangun Kp
Simpen,sementara balai Desa Tenjolaya yang lama dipergunakan oleh Desa Tenjolaya,dari mulai dimekarkan taun 1982 sampai 1983 Kepala Desa dijabat sementara oleh staf Kecamatan Cicalengka yaitu Achmad Ilyas,dan pada saat itu balai Desa Tenjolaya sementara masih mengontrak sebuah rumah penduduk sebagai pusat kegiatan pemerintahan sementara proses pemwangunan balai désa baru sedang berlangsung,berkat swadaya masyarakat sarta bantuan dari berbagai pihak terkait,pada akhir taun 1983 balai Desa
terkait,pada akhir taun 1983 balai Desa Tenjolaya yang baru rampung terselesaikan dan pada taun yang sama pejabat sementara Kepala Desa Tenjolaya Achmad Ilyas dialih tugaskan ke Kecamatan Rancaekek,dan jabatan Kepala Desa kemudian diserahkan pada sekretaris désa Mochmmad Unus dari taun 1983-1985
Dalam masa beliau menjabat sementara kepala désa dibentuklah panitia pemilihan kepala désa untuk mencari calon kepala désa definitive,proses pendaftaran sampai tiga kali terment diadakan tetapi tidak ada calon peserta yang mendaftarkan,dan baru pada terment keempat ada peserta yang mencalonkan yaitu,Wiyoto,Anwar Tatang,dan Toni Resman,pada tanggal 13 Oktober 1985 Pemilihan Kepala Desa Tenjolaya périodeu Tahun 1986-1994 dilaksanakan secara demokratis dan hasilnya dimenagkan oleh Anwar Tatang dan
hasilnya dimenagkan oleh Anwar Tatang dan pada tanggal 30 Januari 1986 beliau dilantik
Selesai masa jabatan beliau kemudian diadakan lagi pemilihan kepala désa périodeu taun 1995-2002 pada tannggal 2 Nopember 1994 dan calon yang terpilih yaitu Mochammad Unus,dan setelah berakhirnya masa jabatan beliau kemudian diadakan lagi pemilihan kepala désa untuk périodeu tahu 2002-2007 dan calaon yang terpilih dan menang secara mutlak yaitu Lili
S. Pada tanggal 4 Nopember 2007 diadakan lagi Pemilihan Calon Kepala Desa Tenjolaya périodeu Tahun 2008-2013,dan Kepala Desa Tenjolaya Lili
S kembali mencalonkan menjadi peserta untuk kemudian terpilih lagi secara mutlak dan kembali beliau terpilih menjabat Kepala Desa Tenjolaya untuk yang kedua kalinya
Berikut Urutan Para Kepala Desa Tenjolaya :
Waluya nyaéta salah sahiji désa di kacamatan Cicaléngka, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ciptagumati, Cikalong Wétan, Bandung
Cikalong, Cikalong Wétan, Bandung
Cipada, Cikalong Wétan, Bandung
Cisomang Barat, Cikalong Wétan, Bandung
Ganjarsari, Cikalong Wétan, Bandung
Kanangasari, Cikalong Wétan, Bandung
Mandalamukti, Cikalong Wétan, Bandung
Mandalasari nyaéta salah sahiji désa di kacamatan Cikalong Wétan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mekarjaya, Cikalong Wétan, Bandung
Puteran, Cikalong Wétan, Bandung
Rendé nyaéta salah sahiji désa di kacamatan Cikalong Wétan, Kabupatén Bandung Kulon, Propinsi Jawa Barat, Indonésia
Ténjolaut nyaéta salah sahiji désa di kacamatan Cikalong Wétan, Kabupatén Bandung Kulon, Propinsi Jawa Barat, Indonésia
Wangunjaya, Cikalong Wétan, Bandung
Cikasungka nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cihanyir nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cikancung nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ciluluk nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Hégarmanah nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mandalasari nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mekarlaksana nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Srirahayu nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Tanjunglaya nyaéta salah sahiji désa di kacamatan Cikancung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ciporéat nyaéta salah sahiji désa di kacamatan Ciléngkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ciléngkrang nyaéta salah sahiji désa di kacamatan Ciléngkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cipanjalu nyaéta salah sahiji désa di kacamatan Ciléngkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Melatiwangi nyaéta salah sahiji désa di kacamatan Ciléngkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Girimekar nyaéta salah sahiji désa di kacamatan Cileungkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Jatiéndah nyaéta salah sahiji désa di kacamatan Ciléngkrang, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cileunyi Kulon nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cibiru Hilir nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cibiru Wétan nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cileunyi Wétan nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cimekar nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cinunuk nyaéta salah sahiji désa di kacamatan Cileunyi, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Citapén nyaéta salasahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Cihampelas nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Cipatik nyaéta salasahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Mekarjaya nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Mekarmukti nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Pataruman nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Singajaya nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Situwangi nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Tanjungjaya nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Tanjungwangi nyaéta salah sahiji désa di kacamatan Cihampelas, Kabupatén Bandung Kulon, Propinsi Jawa Kulon, Indonésia
Batulayang nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Bongas nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Budiharja nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Karanganyar nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cililin nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung Kulon, Propinsi Jawa Barat, Indonésia
Karangtanjung nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Karyamukti nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Kidangpananjung nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mukapayung nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Nanggerang nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Rancapanggung nyaéta salah sahiji désa di kacamatan Cililin, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cimaung nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Campakamulya nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cikalong nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cipinang nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Jagabaya nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Malasari nyaéta salasahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mekarsari nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Pasirhuni nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Sukamaju nyaéta salah sahiji désa di kacamatan Cimaung, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cikadut nyaéta salasahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Cibeunying nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ciburial nyaéta salah sahiji désa di Kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Ieu désa mangrupa désa pangkalérna di Kabupatén Bandung
Sacara géografis koordinatna, nyaéta: WGS : 6° 51′ 19.01″ S, 107° 38′ 38.4″ E -6.855281, 107.644 Geo URI : -6.855281,107.644 geo:-6.855281,107.644 UTM : 48M 792223 9241444 Sajarah
Di handap ieu dibéréndélkeun nu kungsi jadi pamingpin désa Ciburial (Kuwu): Profil Pamaréntahan
Wewengkon désa Ciburial diwangun ku opat (4) dusun, 51 unit RT sarta 12 unit RW
Sacara géografis, wates wialayah désa Ciburial kalawan sawatara wewengkon administratif, boh anu kaasup ka wewengkon administratif kabupatén Bandung, kabupatén Bandung Barat atawa Kota Bandung, nyaéta:
Cimenyan nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mandalamekar nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mekarmanik nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Mekarsaluyu nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Padasuka nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Sindanglaya nyaéta salah sahiji désa di kacamatan Cimenyan, Kabupatén Bandung, Propinsi Jawa Barat, Indonésia
Transistor nyaéta parangkat sémikonduktor nu miboga tilu terminal, bisa digunakeun keur nguatkeun, nyaklar, nytabilkeun voltase, modulasi sinyal, sarta loba deui kagunaan séjénna
Transistor mangrupa blok wangunan dasar tina integrated circuit (IC) analog atawa digital -- sirkuit nu dipaké ngoperasikeun komputer, telepon sélulér, jeung éléktronika modéren séjénna
Kecap "transistor" mangrupa kecap pondokna tina "transfer varistor"
Dingaranan kitu sabab hiji sinyal asupan digunakeun keur ngarobah résistansi dina jalur sinyal kaluaran (varistor nyaéta "variable resistor")
Transistor kabagi jadi dua kategori utama: bipolar junction transistor (BJT) jeung field effect transistor (FET)
Panerapan arus dina BJT jeung tegangan dina FET antara asupan jeung terminal "common" bakal nambah konduktivitas antara terminal "common" jeung kaluaran, antukna arus pangaturannana ngalir di antarana
Keur leuwih jéntré ngeunaan operasi dua tipe transistor ieu, tempo field effect transistor jeung bipolar junction transistor
Dina sirkuit analog, transistor dipaké dina panguat, (panguat arus saarah, panguat sora, panguat frékuénsiradio), jeung Sumber daya nu diregulasi linier
Transistor ogé dipaké dina sirkuit digital nu mana fungsina minangka sakelar
Sirkuit digital ngawengku lawang logika, random access memory (RAM), mikroprosesor, jeung pamroses sinyal digital "(digital signal processors)" (DSP)
The transistor is considered by many to be one of the gréatest inventions in modérn history, ranking in importance with the printing press, automobile and telephone
It is the key active component in practically all modérn electronics
Its importance in today's society rests on its ability to be mass produced using a highly automated process (fabrication) that achieves vanishingly low per-transistor costs
Although millions of individual (known as "discrete") transistors are still used, the vast majority of transistors are fabricated into integrated circuits (also called "microchips" or simply "chips") along with diodes, resistors, capacitors and other electronic components to produce complete electronic circuits
A logic gate comprises about twenty transistors wheréas an advanced microprocessor, as of 2006, can use as many as 1.7 billion transistors (MOSFETs)
The transistor's low cost, flexibility and reliability have made it a universal device for non-mechanical tasks, such as digital computing
Transistorized circuits have replaced electromechanical devices for the control of appliances and machinery as well
It is often less expensive and more effective to use a standard microcontroller and write a computer program to carry out a control function than to design an equivalent mechanical control function
Because of the low cost of transistors and hence digital computers, there is a trend to digitize information
With digital computers offering the ability to quickly find, sort and process digital information, more and more effort has been put into making information digital
As a result, today, much media data is delivered in digital form, finally being converted and presented in analog form by computers
Aréas influenced by the Digital Revolution include television, radio, and newspapers
The first patents for the transistor principle were registered in Germany in 1928 by Julius Edgar Lilienfeld
In 1934 German physicist Dr. Oskar Heil patented the field-effect transistor
It is not cléar whether either design was ever built, and this is generally considered unlikely
On 22 December 1947 William Shockley, John Bardeen and Walter Brattain succeeded in building the first practical point-contact transistor at Bell Labs
This work followed from their war-time efforts to produce extremely pure germanium "crystal" mixer diodes, used in radar units as a frequency mixer element in microwave radar receivers
éarly tube-based technology did not switch fast enough for this role, léading the Bell téam to use solid state diodes instéad
With this knowledge in hand they turned to the design of a triode, but found this was not at all éasy
Bardeen eventually developed a new branch of surface physics to account for the "odd" behaviour they saw, and Bardeen and Brattain eventually succeeded in building a working device
Bell Telephone Laboratories needed a generic name for the new invention: "Semiconductor Triode", "Solid Triode", "Surface States Triode", "Crystal Triode" and "Iotatron" were all considered, but "transistor," coined by John R. Pierce, won an internal ballot
The rationale for the name is described in the following extract from the company's Technical Memoranda calling for votes: Bell put the transistor into production at Western Electric in Allentown, Pennsylvania
They also licensed it to a number of other electronics companies, including Texas Instruments, who produced a limited run of transistor radios as a sales tool
Another company liked the idéa and also decided to take out a license, introducing their own radio under the brand name Sony
éarly transistors were "unstable" and only suitable for low-power, low-frequency applications, but as transistor design developed, these problems were slowly overcome
Over the next two decades, transistors gradually replaced the éarlier vacuum tubes in most applications and later made possible many new devices such as integrated circuits and personal computers
Shockley, Bardeen and Brattain were honored with the Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect"
Bardeen would go on to win a second Nobel in physics, one of only two péople to receive more than one in the same discipline, for his work on the exploration of superconductivity
In August 1948 German physicists Herbert F. Mataré (1912– ) and Heinrich Walker (ca
1912–1981), working at Compagnie des Freins et Signaux Westinghouse in Paris, France applied for a patent on an amplifier based on the minority carrier injection process which they called the "transistron."
Since Bell Labs did not maké a public announcement of the transistor until June 1948, the transistron was considered to be independently developed
Mataré had first observed transconductance effects during the manufacture of germanium duodiodes for German radar equipment during WWII
Transistrons were commercially manufactured for the French telephone company and military, and in 1953 a solid-state radio receiver with four transistrons was demonstrated at the Düsseldorf Radio Fair
Transistors are categorized by: Thus, a particular transistor may be described as: "silicon, surface mount, BJT, NPN, low power, high frequency switch"
The bipolar junction transistor (BJT) was the first type of transistor to be mass-produced
Bipolar transistors are so named because they conduct by using both majority and minority carriers
The three terminals are named "emitter", "base" and "collector"
Two p-n junctions exist inside a BJT: the "base/collector junction" and "base/emitter junction"
The BJT is commonly described as a current-operated device because the emitter/collector current is controlled by the current flowing between base and emitter terminals
Unlike the FET, the BJT is a low input-impedance device
The BJT has a higher transconductance than the FET
Bipolar transistors can be made to conduct with light (photons) as well as current
Devices designed for this purpose are called phototransistors
The field-effect transistor (FET), sometimes called a "unipolar transistor", uses either electrons (N-channel FET) or holes (P-channel FET) for conduction
The three main terminals of the FET are named "source", "gate" and "drain"
On some FETs a fourth connection to the body (substrate) is provided, but normally the body is connected internally to the source
A voltage applied between the gate and source controls the current flowing between the source and drain
In FETs the source/ drain current flows through a conducting channel néar the "gate"
This channel connects the "source" region to the "drain" region
The channel conductivity is varied by the electric field generated by the voltage applied between the gate/source terminals
In this way the current flowing between the source and drain is controlled
Like bipolar transistors, FETs can be made to conduct with light (photons) as well as voltage
FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET)
The IGFET is more commonly known as metal-oxide-semiconductor FET (MOSFET), from their original construction as a layer of metal (the gate), a layer of oxide (the insulation), and a layer of semiconductor
Unlike IGFETs, the JFET gate forms a PN diode with the channel which lies between the source and drain
Functionally, this makes the N-channel JFET the solid state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode
Also, both devices operate in the "depletion mode", they both have a high input impedance, and they both conduct current under the control of an input voltage
MESFETs are JFETs, in which the reverse biased PN junction is replaced by a semiconductor-metal Schottky-junction
These, and the HEMFETs (high electron mobility FETs), in which a two-dimensional electron gas with very high carrier mobility is used for charge transport, are especially suitable for use at very high frequencies (microwave frequencies; several GHz)
FETs are further divided into depletion-mode and enhancement-mode types
Mode refers to the polarity of the gate voltage with respect to the source at the threshold of conduction
For N-channel depletion-mode FETs the gate is negative with respect to the source while for N-channel enhancement-mode FETs the gate is positive, at the threshold of conduction
For both modes, if the gate voltage is made more positive the source/drain current will incréase
For P-channel devices the polarities are reversed
Néarly all JFETs are depletion-mode types and most IGFETs are enhancement-mode types
The first BJTs were made from germanium (Ge) and some high power types still are
Silicon (Si) types currently predominate but certain advanced microwave and high performance versions now employ the compound semiconductor material gallium arsenide (GaAs) and the semiconductor alloy silicon germanium (SiGe)
Single element semiconductor material (Ge and Si) is described as elemental
Characteristics of the most common semiconductor materials used to maké transistors are given in the table below: The "junction forward voltage" is the voltage applied to the emitter-base junction of a BJT in order to maké the base conduct a specified current
The current incréases exponentialally as the junction forward voltage is incréased
The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor diodes)
The lower the junction forward voltage the better, as this méans that less power is required to "drive" the transistor
The junction forward voltage for a given current decréases with temperature
For a typical silicon junction the change is approximately −2.1 mV/°C
The "electron mobility" and "hole mobility" columns show the average speed that electrons and holes diffuse through the semiconductor material with an electric field of 1 volt per méter applied across the material
In general, the higher the electron mobility the faster the transistor
The table indicates that Ge is a better material than Si in this respect
However, Ge has four major shortcomings compared to silicon and gallium arsenide: its maximum temperature is limited, it has relatively high leakage current, it cannot withstand high voltages and it is less suitable for fabricating integrated circuits
Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar NPN transistor tends to be faster than an equivalent PNP transistor type
GaAs has the fastest electron mobility of the three semiconductors
It is for this réason that GaAs is used in high frequency applications
A relatively recent FET development, the high electron mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has double the electron mobility of a GaAs-metal barrier junction
junction temperature values represent a cross section taken from various manufacturers' data sheets
This temperature should not be exceeded or the transistor may be damaged
Al-Si junction refers to the high-speed (aluminum-silicon) semiconductor-metal barrier diode, commonly known as a Schottky diode
This is included in the table because some silicon power IGFETs have a parasitic reverse Schottky diode formed between the source and drain as part of the fabrication process
Transistors come in many different packages () (see images)
The two main categories are "through-hole" (or "leaded"), and "surface-mount", also known as surface mount device (SMD)
The ball grid array (BGA) is the latest surface mount package (currently only for large transistor arrays)
It has solder "balls" on the underside in place of léads
Because they are smaller and have shorter interconnections, SMDs have better high frequency characteristics but lower power rating
Transistor packages are made of glass, metal, ceramic or plastic
The package often dictates the power rating and frequency characteristics
Power transistors have large packages that can be clamped to heat sinks for enhanced cooling
Additionally, most power transistors have the collector or drain physically connected to the metal can/metal plate
At the other extreme, some surface-mount microwave transistors are as small as grains of sand
Often a given transistor type is available in different packages
Transistor packages are mainly standardized, but the assignment of a transistor's functions to the terminals is not: different transistor types can assign different functions to the package's terminals
Even for the same transistor type the terminal assignment can vary (normally indicated by a suffix letter to the part number- i.e
BC212L and BC212K)
In the éarly days of transistor circuit design, the bipolar junction transistor, or BJT, was the most commonly used transistor
Even after MOSFETs became available, the BJT remained the transistor of choice for digital and analog circuits because of their éase of manufacture and speed
However, the MOSFET has several desirable properties for digital circuits, and since major advancements in digital circuits have pushed MOSFET design to state-of-the-art
MOSFETs are now commonly used for both analog and digital functions
Transistors are commonly used as electronic switches, for both high power applications including switched-mode power supplies and low power applications such as logic gates
From mobile phones to televisions, vast numbers of products include amplifiers for sound reproduction, radio transmission, and signal processing
The first discrete transistor audio amplifiers barely supplied a few hundred milliwatts, but power and audio fidelity gradually incréased as better transistors became available and amplifier architecture evolved
Transistors are commonly used in modérn musical instrument amplifiers, where circuits up to a few hundred watts are common and relatively chéap
Transistors have largely replaced valves in instrument amplifiers
Some musical instrument amplifier manufacturers mix transistors and vacuum tubes in the same circuit, to utilize the inherent benefits of both devices
The "first generation" of electronic computers used vacuum tubes, which generated large amounts of héat and were bulky, and unreliable
The development of the transistor was key to computer miniaturization and reliability
The "second generation" of computers, through the late 1950s and 1960s féatured boards filled with individual transistors and magnetic memory cores
Subsequently, transistors, other components, and their necessary wiring were integrated into a single, mass-manufactured component: the integrated circuit
Transistors incorporated into integrated circuits have replaced most discrete transistors in modérn digital computers
Kauntungan transistor dibandingkeun jeung solobong vakum
Before the development of transistors, vacuum tubes (or in the UK thermionic valves or just valves) were the main active components in electronic equipment
The key advantages that have allowed transistors to replace their vacuum tube predecessors in most applications are: " "Nature abhors a vacuum tube" " Myron Glass (see John R. Pierce), Bell Telephone Laboratories, circa 1948
A wide range of transistors has been available since the 1960s and manufacturers continually introduce improved types
A few examples from the main families are noted below
Unless otherwise stated, all types are made from silicon semiconductor
Complementary pairs are shown as NPN/PNP or N/P channel
Links go to manufacturer datasheets, which are in PDF format
(On some datasheets the accuracy of the stated transistor category is a matter of debate.)
Dina éléktronika, dioda nyaéta hiji komponén nu ngahalangan arah gerak pamawa muatan
Prinsip dasarna, dioda ngaliwatkeun arus listrik kana hiji arah, tapi ngahalangan éta arus lamun arahna sabalikna
Ku kituna, dioda bisa dianggep minangka vérsi éléktronikna tina kelép pangecékan
Sirkuit nu ngabutuhkeun aliran arus ngan saarah umumna pasti ngagunakeun hiji atawa leuwih dioda dina rancangan sirkuitna
Dioda baheula maké kristal "cat's whisker" jeung parangkat solobong vakum (disebut "thermionic valves" dina basa Inggris)
Kiwari lolobana dioda umumna dijieun tina bahan sémikonduktor saperti silikon atawa germanium
Dioda térmionik jeung padetan "(solid state)" diwangun sacara paralél
Prinsip oprasi dioda térmionik kapanggih ku Frederick Guthrie taun 1873
Prinsip oprasi dioda kristal kapanggih taun 1874 ku élmuwan Jérman, Karl Ferdinand Braun
Thermionic diode principles were rediscovered by Thomas Edison on February 13, 1880 and he took out a patent in 1883 (), but developed the idéa no further
Braun patented the crystal rectifier in 1899
The first radio receiver using a crystal diode was built around 1900 by Greenleaf Whittier Pickard
The first thermionic diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee ) on November 16, 1904 ( in November 1905)
Pickard received a patent for a silicon crystal detector on November 20, 1906 ()
At the time of their invention such devices were known as rectifiers
In 1919 William Henry Eccles coined the term diode from Greek roots; "di" méans 'two', and "ode" (from "odos") méans 'path'
Diod térmionik atawa ngandung gas
Thermionic diodes are vacuum tube devices (also known as thermionic valves), which are arrangements of electrodes surrounded by a vacuum within a glass envelope, similar in appéarance to incandescent light bulbs
In vacuum tube diodes, a current is passed through the cathode, a filament tréated with a mixture of barium and strontium oxides, which are oxides of alkaline earth metals
The current héats the filament, causing thermionic emission of electrons into the vacuum envelope
In forward operation, a surrounding metal electrode, called the anode, is positively charged, so that it electrostatically attracts the emitted electrons
However, electrons are not éasily reléased from the unhéated anode surface when the voltage polarity is reversed and hence any reverse flow is a very tiny current
For much of the 20th century vacuum tube diodes were used in analog signal applications, and as rectifiers in power supplies
Today, tube diodes are only used in niche applications, such as rectifiers in tube guitar and hi-fi amplifiers, and specialized high-voltage equipment
Dioda nu pangmodérenna dumasar kana hubungan p-n sémikonduktor
Dina dioda p-n, arus konvénsional bisa ngalir ti sisi tipe p (anoda) ka tipe n (katoda) tapi henteu bisa ngalir dina arah nu sabalikna
Tipe dioda sémikonduktor lianna, dioda Schottky, diwangun tina hubungan antara logam jeung sémikonduktor, tinimbang hubungan p-n-na
A semiconductor diode's current-voltage, or I-V, characteristic curve is ascribed to the behavior of the so-called "depletion layer" or "depletion zone" which exists at the p-n junction between the differing semiconductors
When a p-n junction is first créated, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (places for electrons in which no electron is present) with which the electrons "recombine"
When a mobile electron recombines with a hole, the hole vanishes and the electron is no longer mobile
Thus, two charge carriers have vanished
The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator
However, the depletion width cannot grow without limit
For éach electron-hole pair that recombines, a positively-charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region
As recombination proceeds and more ions are créated, an incréasing electric field develops through the depletion zone which acts to slow and then finally stop recombination
At this point, there is a 'built-in' potential across the depletion zone
If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator preventing a significant electric current
This is the "reverse bias" phenomenon
However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed resulting in substantial electric current through the p-n junction
For silicon diodes, the built-in potential is approximately 0.6 V. Thus, if an external current is passed through the diode, about 0.6 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be 'turned on' as it has a "forward bias"
A diode's I-V characteristic can be approximated by two regions of operation
Below a certain difference in potential between the two léads, the depletion layer has significant width, and the diode can be thought of as an open (non-conductive) circuit
As the potential difference is incréased, at some stage the diode will become conductive and allow charges to flow, at which point it can be thought of as a connection with zero (or at léast very low) resistance
More precisely, the transfer function is logarithmic, but so sharp that it looks like a corner on a zoomed-out graph ("see also" signal processing)
In a normal silicon diode at rated currents, the voltage drop across a conducting diode is approximately 0.6 to 0.7 volts
The value is different for other diode types - Schottky diodes can be as low as 0.2 V and light-emitting diodes (LEDs) can be 1.4 V or more (Blue LEDs can be up to 4.0 V)
Referring to the I-V characteristics image, in the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range) for all reverse voltages up to a point called the péak-inverse-voltage (PIV)
Beyond this point a process called reverse breakdown occurs which causes the device to be damaged along with a large incréase in current
For special purpose diodes like the avalanche or zener diodes, the concept of PIV is not applicable since they have a deliberate bréakdown beyond a known reverse current such that the reverse voltage is "clamped" to a known value (called the "zener voltage" or breakdown voltage)
These devices however have a maximum limit to the current and power in the zener or avalanche region
Persamaan dioda Shockley
The "Shockley ideal diode equation" (named after William Bradford Shockley) is the I-V characteristic of an idéal diode in either forward or reverse bias (or no bias)
It is derived with the assumption that the only processes giving rise to current in the diode are drift (due to electrical field), diffusion, and thermal recombination-generation
It also assumes that the recombination-generation (R-G) current in the depletion region is insignificant
This méans that the Shockley equation doesn't account for the processes involved in reverse bréakdown and photon-assisted R-G. Additionally, it doesn't describe the "leveling off" of the I-V curve at high forward bias due to internal resistance, nor does it explain the practical deviation from the idéal at very low forward bias due to R-G current in the depletion region
formula_1, di mana "I" is the diode current, "I"S is a scale factor called the "saturation current", "V"D is the voltage across the diode "V"T is the "thermal voltage" and "n" is the "emission coefficient"
The emission coefficient "n" varies from about 1 to 2 depending on the fabrication process and semiconductor material and in many cases is assumed to be approximately equal to 1 (thus omitted)
The "thermal voltage" "V"T is approximately 25.2 mV at room temperature (approximately 25oC or 298K) and is a known constant
It is defined by: formula_2, di mana "e" is the magnitude of charge on an electron (the elementary charge), "k" is Boltzmann's constant, "T" is the absolute temperature of the p-n junction
Tipe-tipe dioda sémikonduktor
There are several types of semiconductor junction diodes: which operate as described above
Usually made of doped silicon or, more rarely, germanium
Before the development of modern silicon power rectifier diodes, cuprous oxide and later selenium was used; its low efficiency gave it a much higher forward voltage drop (typically 1.4 - 1.7 V per "cell," with multiple cells stacked to increase the peak inverse voltage rating in high voltage rectifiers), and required a large heat sink (often an extension of the diode's metal substrate), much
of the diode's metal substrate), much larger than a silicon diode of the same current ratings would require
As a dopant, gold (or platinum) acts as recombination centers, which help a fast recombination of minority carriers
A typical example is the 1N914
(pronounced ) Diodes that can be made to conduct backwards
In practical voltage reference circuits Zener and switching diodes are connected in series and opposite directions to balance the temperature coefficient to near zero
Some devices labeled as high-voltage Zener diodes are actually avalanche diodes (see below)
They are named for Dr. Clarence Melvin Zener of Southern Illinois University, inventor of the device
Diodes that conduct in the reverse direction when the reverse bias voltage exceeds the breakdown voltage
These are electrically very similar to Zener diodes, and are often mistakenly called Zener diodes, but break down by a different mechanism, the "avalanche effect"
This occurs when the reverse electric field across the p-n junction causes a wave of ionization, reminiscent of an avalanche, leading to a large current
The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the 'mean free path' of the electrons, so there are collisions between them on the way out
The only practical difference is that the two types have temperature coefficients of opposite polarities
These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage transients
Their p-n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage
Semiconductors are subject to optical charge carrier generation and therefore most are packaged in light blocking material
If they are packaged in materials that allow light to pass, their photosensitivity can be utilized
Photodiodes can be used as solar cells, and in photometry
In a diode formed from a direct band-gap semiconductor, such as gallium arsenide, carriers that cross the junction emit photons when they recombine with the majority carrier on the other side
The forward potential of these diodes depends on the wavelength of the emitted photons: 1.2 V corresponds to red, 2.4 to violet
All LEDs are monochromatic; 'white' LEDs are actually combinations of three LEDs of a different color, or a blue LED with a yellow scintillator coating
When an LED-like structure is contained in a resonant cavity formed by polishing the parallel end faces, a laser can be formed
Schottky diodes are constructed from a metal to semiconductor contact
They have a lower forward voltage drop than a standard PN junction diode
Their forward voltage drop at forward currents of about 1 mA is in the range 0.15 V to 0.45 V, which makes them useful in voltage clamping applications and prevention of transistor saturation
They can also be used as low loss rectifiers although their reverse leakage current is generally much higher than non Schottky rectifiers
Schottky diodes are majority carrier devices and so do not suffer from minority carrier storage problems that slow down most normal diodes
They also tend to have much lower junction capacitance than PN diodes and this contributes towards their high switching speed and their suitability in high speed circuits and RF devices such as mixers and detectors
The term 'step recovery' relates to the form of the reverse recovery characteristic of these devices
SRDs can therefore provide very fast voltage transitions by the very sudden disappearance of the charge carriers
these have a region of operation showing negative resistance caused by quantum tunneling, thus allowing amplification of signals and very simple bistable circuits
These diodes are also the type most resistant to nuclear radiation
these are similar to tunnel diodes in that they are made of materials such as GaAs or InP that exhibit a region of negative differential resistance
are used as sensors, heat engines for thermoelectric cooling
Charge carriers absorb and emit their band gap energies as heat.There are other types of diodes, which all share the basic function of allowing electrical current to flow in only one direction, but with different methods of construction
These work the same as the junction semiconductor diodes described above, but its construction is simpler