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The Shockley ideal diode equation (named after William Bradford Shockley) is the I-V characteristic of an idéal diode in either forward or reverse bias (or no bias). It is derived with the assumption that the only processes giving rise to current in the diode are drift (due to electrical field), diffusion, and thermal recombination-generation. It also assumes that the recombination-generation (R-G) current in the depletion region is insignificant. This méans that the Shockley equation doesn't account for the processes involved in reverse bréakdown and photon-assisted R-G. Additionally, it doesn't describe the "leveling off" of the I-V curve at high forward bias due to internal resistance, nor does it explain the practical deviation from the idéal at very low forward bias due to R-G current in the depletion region.