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A PIN diode has a central un-doped, or intrinsic, layer, forming a p-type / intrinsic / n-type structure. They are used as radio frequency switches, similar to varactor diodes but with a more sudden change in capacitance. They are also used as large volume ionizing radiation detectors and as photodetectors. PIN diodes are also used in power electronics, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many power semiconductor devices, such as IGBTs, power MOSFETs, and thyristors.