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e is the magnitude of charge on an electron (the elementary charge),

T is the absolute temperature of the p-n junction.

There are several types of semiconductor junction diodes:

which operate as described above. Usually made of doped silicon or, more rarely, germanium. Before the development of modern silicon power rectifier diodes, cuprous oxide and later selenium was used; its low efficiency gave it a much higher forward voltage drop (typically 1.4 - 1.7 V per "cell," with multiple cells stacked to increase the peak inverse voltage rating in high voltage rectifiers), and required a large heat sink (often an extension of the diode's metal substrate), much larger than a silicon diode of the same current ratings would require.