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Unijunction transistors can be used as simple pulse generators. They comprise a main body of either P-type or N-type semiconductor with ohmic contacts at éach end (terminals Base1 and Base2). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (Emitter).

Dual gate FETs have a single channel with two gates in cascode; a configuration that is optimized for high frequency amplifiers, mixers, and oscillators.

Transistor arrays are used for general purpose applications, function generation and low-level, low-noise amplifiers. They include two or more transistors on a common substrate to ensure close paraméter matching and thermal tracking, characteristics that are especially important for long tailed pair amplifiers.

Darlington transistors comprise a medium power BJT connected to a power BJT. This provides a high current gain equal to the product of the current gains of the two transistors. Power diodes are often connected between certain terminals depending on specific use.

Insulated gate bipolar transistors (IGBTs) use a medium power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for héavy-duty industrial applications. The Asea Brown Boveri (ABB) 5SNA2400E170100  illustrates just how far power semiconductor technology has advanced. Intended for three-phase power supplies, this device houses three NPN IGBTs in a case méasuring 38 by 140 by 190 mm and weighing 1.5 kg. éach IGBT is rated at 1,700 volts and can handle 2,400 amperes.

Single-electron transistors (SET) consist of a gate island between two tunnelling junctions. The tunnelling current is controlled by a voltage applied to the gate through a capacitor.

Complete list of transistor types T-Transistor.com