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The first patents for the transistor principle were registered in Germany in 1928 by Julius Edgar Lilienfeld. In 1934 German physicist Dr. Oskar Heil patented the field-effect transistor. It is not cléar whether either design was ever built, and this is generally considered unlikely.

On 22 December 1947 William Shockley, John Bardeen and Walter Brattain succeeded in building the first practical point-contact transistor at Bell Labs. This work followed from their war-time efforts to produce extremely pure germanium "crystal" mixer diodes, used in radar units as a frequency mixer element in microwave radar receivers. éarly tube-based technology did not switch fast enough for this role, léading the Bell téam to use solid state diodes instéad. With this knowledge in hand they turned to the design of a triode, but found this was not at all éasy. Bardeen eventually developed a new branch of surface physics to account for the "odd" behaviour they saw, and Bardeen and Brattain eventually succeeded in building a working device.

Bell Telephone Laboratories needed a generic name for the new invention: "Semiconductor Triode", "Solid Triode", "Surface States Triode", "Crystal Triode" and "Iotatron" were all considered, but "transistor," coined by John R. Pierce, won an internal ballot. The rationale for the name is described in the following extract from the company's Technical Memoranda calling for votes:

Bell put the transistor into production at Western Electric in Allentown, Pennsylvania. They also licensed it to a number of other electronics companies, including Texas Instruments, who produced a limited run of transistor radios as a sales tool. Another company liked the idéa and also decided to take out a license, introducing their own radio under the brand name Sony. éarly transistors were "unstable" and only suitable for low-power, low-frequency applications, but as transistor design developed, these problems were slowly overcome. Over the next two decades, transistors gradually replaced the éarlier vacuum tubes in most applications and later made possible many new devices such as integrated circuits and personal computers.

Shockley, Bardeen and Brattain were honored with the Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect". Bardeen would go on to win a second Nobel in physics, one of only two péople to receive more than one in the same discipline, for his work on the exploration of superconductivity.

In August 1948 German physicists Herbert F. Mataré (1912– ) and Heinrich Walker (ca. 1912–1981), working at Compagnie des Freins et Signaux Westinghouse in Paris, France applied for a patent on an amplifier based on the minority carrier injection process which they called the "transistron." Since Bell Labs did not maké a public announcement of the transistor until June 1948, the transistron was considered to be independently developed. Mataré had first observed transconductance effects during the manufacture of germanium duodiodes for German radar equipment during WWII. Transistrons were commercially manufactured for the French telephone company and military, and in 1953 a solid-state radio receiver with four transistrons was demonstrated at the Düsseldorf Radio Fair.