In this task, you need to Translate Czech text to English.

[Q]: Pyridazinov  deriv ty obecn ho vzorce II, ve kter m Z znamen  O, S nebo NH, kruh A je pop° pad  substituovan² ortho-kondenzovan² aromatick² nebo heteroaromatick² p ti- nebo Üesti lenn² kruh a symbol R.sup.1.n. znamen  skupinu -(CH.sub.2.n.).sub.n.n.L, kde n m  hodnotu 0 a L m  e p°edstavovat arylov , heteroarylov  a heterocyklick  skupiny. Tyto slou eniny jsou pou iteln  pro oÜet°en  nebo/a prevenci neurologick²ch poruch spojen²ch s excita n mi aminokyselinami.\
[A]: Pyridazine derivatives of the general formula II in which Z is O, S or NH, ring A is a pop-ring substituted ortho-fused aromatic or heteroaromatic ring or ring and R.sup.1 symbol. is a moiety - (CH.sub.2.), wherein n m is 0 and L may be aryl, heteroaryl and heterocyclic groups. These compounds are useful for the treatment or prevention of neurological disorders associated with excitatory amino acids.


[Q]: Medomety s možností odvíčkování včelích plástů přímo nad nimi jsou doplněné o dvě spony, ustavené odnímatelně nebo pevně zevnitř vnitřní hrany jejich vstupu a dále o polohově upřesněnou oporu pro zadržení otevřeného víka v mírně zakloněném stavu.
[A]: The honeycombs with the possibility of uncapping the honeycombs directly above them are supplemented by two buckles, fixed removably or firmly from the inside of the inner edge of their inlet, and further by a positioning support for the retention of the open lid in a slightly tilted state.


[Q]: Polovodicová výkonová soucástka (1) je provedena s RESURF-oblastí (4) usporádanou mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3), s alespon jedním polysiliciovým odporem (5) mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3), pricemž polysiliciový odpor (5) je usporádán nad RESURF-oblastí (4) a je od této RESURF-oblasti (4) elektricky izolován. Polysiliciový odpor (5) je meandrovite veden z vysokonapetové strany (2) do nízkonapetové strany (3) pro prenos signálu mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3).
[A]:
In the present invention, there is disclosed a semiconductor power component (1) having a reduced surface field (RESURF) region (4) disposed between the high-pressure side (2) and the low-pressure side (3), characterized in that at least one polysilicon resistor (5) for signal transmission is provided between the high-pressure side (2) and the low-pressure side (3); that the polysilicon resistor (5) is disposed above the RESURF region (4); that the polysilicon resistor (5) is electrically insulated from the RESURF region (4); and that the polysilicon resistor (5) is laid in a meandering pattern from the high-pressure side (2) to the low-pressure side (3) for signal transmission between the high-pressure side (2) and the low-pressure side (3).