This task is about reading the given passage and construct a question about the information present in the passage. Construct a question in such a way that (i) it is unambiguous, (ii) it is answerable from the passage, (iii) its answer is unique (iv) its answer is a continuous text span from the paragraph. Avoid creating questions that (i) can be answered correctly without actually understanding the paragraph and (ii) uses same words or phrases given in the passage.

Input: Consider Input: The Polish term "szlachta" designated the formalized, hereditary noble class of Polish-Lithuanian Commonwealth. In official Latin documents of the old Commonwealth, hereditary szlachta are referred to as "nobilitas" and are indeed the equivalent in legal status of the English nobility.

Output: What term designated the noble class of polish Lithuania common wealth?


Input: Consider Input: The brushless wound-rotor synchronous doubly-fed (BWRSDF) machine is the only electric machine with a truly dual ported transformer circuit topology (i.e., both ports independently excited with no short-circuited port). The dual ported transformer circuit topology is known to be unstable and requires a multiphase slip-ring-brush assembly to propagate limited power to the rotor winding set. If a precision means were available to instantaneously control torque angle and slip for synchronous operation during motoring or generating while simultaneously providing brushless power to the rotor winding set, the active current of the BWRSDF machine would be independent of the reactive impedance of the transformer circuit and bursts of torque significantly higher than the maximum operating torque and far beyond the practical capability of any other type of electric machine would be realizable. Torque bursts greater than eight times operating torque have been calculated.

Output: What is the only device with dual ported transformer circuit topology?


Input: Consider Input: Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar n–p–n transistor tends to be swifter than an equivalent p–n–p transistor. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the high-electron-mobility transistor (HEMT), has a heterostructure (junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on gallium nitride and aluminium gallium nitride (AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications.


Output: What semiconductor has the highest electron mobility?