Compose a new way to ask the same question. The new question must be asking the exact same thing as the original question does. Without any other information, you should be able to tell that the original question and the new question are the same. Preserve bracketed phrases in your new question. You can change the rest of the question provided the above requirements are satisfied. The new question must have a natural, fluent formulation, as if it were composed by a native English speaker. You will be given three pieces of information to help you create better questions. Those are: "Answer": the answer to the question, e.g., "Honolulu". "Answer Type": the type of the answer, e.g., "Location". "Auxiliary Information" is a detailed description of some concepts mentioned in the question, if any.

Example Input: original question: What is the award category for nomination announcement [November 13, 2013 UK Festival Awards Nomination Announcement]?
answer: uk festival award for best line-up, uk festival award for agency of the year, uk festival award for best use of new technology...
answer type: Award category.
auxiliary information: The announcement of a jury-decided nominee shortlist for the 2014 UK Festival Awards took place on November 13th, 2013.
Example Output: [November 13, 2013 UK Festival Awards Nomination Announcement] is a nomination announcement for what categories of awards?

Example Input: original question: What other inventions are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?
answer: liquid-phase epitaxy on si substrate
answer type: Invention.
auxiliary information: Researchers in Dr. Jim Plummer's laboratory at Stanford University have developed a simple new method to fabricate high mobility channel materials on silicon devices.  This low-cost, CMOS-compatible process is based on a liquid phase epitaxy technique where material contacts a seed window in the bulk silicon from which high quality single crystal growth propagates. State of the art Germanium on Insulator (GeOI) devices have been fabricated and the method has been demonstrated for GaAs on oxide and can be applied to a variety of compound semiconductors, such as GaP, InP, InSb and GaSb etc., that melt congruently.  The technology could be used to easily fabricate a variety of structures, including fins, ultra-thin body, and nanowire devices.The basic patented process and its applications to GeOI is included in Stanford Docket 03-201 (U.S. Patent No. 7,498,243).  Further work with compound semiconductors is described in a pending continuation-in-part patent application included in Stanford Docket S08-404.Status of Research  The inventors have demonstrated state of the art GeOI devices and surprisingly high quality crystalline GaAs on insulator on bulk Si substrates using this technique.
Example Output: What are the other inventions that are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?

Example Input: original question: Which australian suburb has the postal code [5023]?
answer: findon, south australia, seaton
answer type: Australian Suburb.
Example Output:
Name the australian suburb that has [5023] as the postal code.