TASK DEFINITION: Compose a new way to ask the same question. The new question must be asking the exact same thing as the original question does. Without any other information, you should be able to tell that the original question and the new question are the same. Preserve bracketed phrases in your new question. You can change the rest of the question provided the above requirements are satisfied. The new question must have a natural, fluent formulation, as if it were composed by a native English speaker. You will be given three pieces of information to help you create better questions. Those are: "Answer": the answer to the question, e.g., "Honolulu". "Answer Type": the type of the answer, e.g., "Location". "Auxiliary Information" is a detailed description of some concepts mentioned in the question, if any.
PROBLEM: original question: What is the unit of force in [International System of Units]?
answer: newton
answer type: Unit of Force.
auxiliary information: The International System of Units is the modern form of the metric system and is the world's most widely used system of measurement, used in both commerce and science. It comprises a coherent system of units of measurement built on seven base units. It defines twenty-two named units, and includes many more unnamed coherent derived units. The system also establishes a set of twenty prefixes to the unit names and unit symbols that may be used when specifying multiples and fractions of the units. The system was published in 1960 as the result of an initiative that started in 1948. It is based on the metre-kilogram-second system of units rather than any variant of the centimetre‚Äìgram‚Äìsecond system. SI is intended to be an evolving system, so prefixes and units are created and unit definitions are modified through international agreement as the technology of measurement progresses and the precision of measurements improves. The 25th General Conference on Weights and Measures in 2014, for example, discussed a proposal to change the definition of the kilogram.

SOLUTION: In [International System of Units], what is the unit of force?

PROBLEM: original question: Find electric system whose locomotive class is [SBB-CFF-FFS Re 420].
answer: 15 kv ac railway electrification
answer type: Electric system.
auxiliary information: The Re 420, originally Re 4/4·¥µ·¥µ, series are the most common electric locomotives of the Swiss Federal Railways. They are used for passenger services throughout Switzerland alone or in pairs. For freight services, they are sometimes paired with the Re 620, especially in mountainous regions. That pairing is referred to by the term Re 10/10. The Re 430, originally known as the Re 4/4·¥µ·¥µ·¥µ, are a derivative of the Re 420 modified for higher traction but lower speed. The Re 420 locomotives were produced over a period of 21 years, from 1964 to 1985. Re 4/4·¥µ·¥µ·¥µ Subseries:·¥µ·¥µ·¥µ When S√ºdostbahn had the opportunity to buy one of the first batch of 50 Re 4/4·¥µ·¥µ locomotives before delivery, it had the gear modified for higher traction and lower speed for the steep routes of the SOB. This locomotive was delivered as number 41. Based on the SOB experience, the SBB ordered a batch of 20 Re 4/4·¥µ·¥µ·¥µ in 1969 for use on the Gotthard route

SOLUTION: Which electric system has locomotive system [SBB-CFF-FFS Re 420]?

PROBLEM: original question: What other inventions are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?
answer: liquid-phase epitaxy on si substrate
answer type: Invention.
auxiliary information: Researchers in Dr. Jim Plummer's laboratory at Stanford University have developed a simple new method to fabricate high mobility channel materials on silicon devices.  This low-cost, CMOS-compatible process is based on a liquid phase epitaxy technique where material contacts a seed window in the bulk silicon from which high quality single crystal growth propagates. State of the art Germanium on Insulator (GeOI) devices have been fabricated and the method has been demonstrated for GaAs on oxide and can be applied to a variety of compound semiconductors, such as GaP, InP, InSb and GaSb etc., that melt congruently.  The technology could be used to easily fabricate a variety of structures, including fins, ultra-thin body, and nanowire devices.The basic patented process and its applications to GeOI is included in Stanford Docket 03-201 (U.S. Patent No. 7,498,243).  Further work with compound semiconductors is described in a pending continuation-in-part patent application included in Stanford Docket S08-404.Status of Research  The inventors have demonstrated state of the art GeOI devices and surprisingly high quality crystalline GaAs on insulator on bulk Si substrates using this technique.

SOLUTION:
What are the other inventions that are associated with the same patent as [A simple method to form crystalline compound semiconductors on silicon substrates] is?