2.3.2022
EN
Official Journal  of the European Unio
2.
Specially designed equipment for achieving a surface roughness of the active surface of a processed wafer with a two-sigma value of 2 micrometer or less, total indicator reading (TIR);
Note: X.B.I.001.b.1.k does not control single-side lapping and polishing equipment for wafer surface finishing.
l.
Interconnection equipment which includes common single or multiple vacuum chambers specially designed to permit the integration of any equipment controlled by X.B.I.001 into a complete system;
m.
“Stored program controlled” equipment using “lasers” for the repair or trimming of “monolithic integrated circuits” with either of the following characteristics: 1.
Positioning accuracy less than ± 1 micrometer; or
2.
Spot size (kerf width) less than 3 micrometer.
Technical Note: For the purpose of X.B.I.001.b.1, 'sputtering' is an overlay coating process wherein positively charged ions are accelerated by an electric field towards the surface of a target (coating material).
The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on the substrate.
(Note: Triode, magnetron or radio frequency sputtering to increase adhesion of coating and rate of deposition are ordinary modifications of the process.).
L 67/27