gebhart/patrepeval huggingface dataset:
Complementary masking approach for proximity electron lithography (2002)

We have devised a new mask format for low-energy electron-beam proximity-projection lithography (LEEPL) that enables faster and more accurate image transfer from the mask to a wafer, in comparison with the single-membrane mask as originally proposed. Simultaneous exposure over four adjacent complementary quadrants of the mask, synchronized with step-and-repeat motion of the wafer stage, yields one complete pattern with the throughput of ∼30 wafers/h. Mechanical analysis has demonstrated that the new format also offers better controllability of image placement owing to smaller membranes, even though the gravitational deformation of the mask, for example, must still be corrected for.
A separate double-winding 12-phase brushless DC motor drive fed from individual H-bridge inverters (2010)

This paper deals with a separate double-winding 12-phase BLDC motor fed from individual H-bridge inverters. The system is fault tolerant in that continuous operation is possible under fault conditions. Every phase is electrically independent from each other and doubly wound to intensify the redundancy of the system. Furthermore, each phase is asymmetrically 15 degrees apart to have the same torque ripple reduction effect as 24-phase counterpart. Two partial windings in each phase are taken control of by one inverter module. One module consists of two single phase H-bridge inverters and can be detached from other modules to be repaired or replaced while it is out of operation. In terms of motor drive, sinusoidal wave currents are applied to the stators for minimizing torque ripples and the operating efficiency at low rotational speed of motor is improved by series connection of the partial windings. Simulations and experimental studies are conducted to evaluate the performance of the system based on a prototype motor.
Pack-extraction method combined with inductively coupled plasma mass spectroscopy to monitor metal contaminants on surfaces of silicon wafers (2000)

A method to extract micro-contaminants detrimental to silicon (Si) devices is developed and its impact on clean technology is discussed, focusing on upgrading the oxide film performance of densely packed devices. Detrimental metal impurities (Fe, Cu, Al, Ni and Zn) on surfaces of Si wafers from three vendors were successfully extracted with a prototype pack-extraction method (PEM), in which sample wafers were individually enclosed in a cleaned Teflon bag containing an aqueous acid solution. Each solution, which contained extracted contaminants, was then analysed with inductively coupled plasma mass spectroscopy (ICP-MS). The results could help reduce undesirable impurities that degrade device characteristics. To analyse impurities on surfaces and in the Si bulk separately, we developed an improved PEM, in which impurities were extracted by successively heating the wafer with three different acid solutions ((i) HCl/H2O, (ii) HF/H2O and (iii) HF/HNO3/H2O). By using this improved PEM combined with ICP-MS, we analysed the impurities on the oxide surfaces, in the oxide and in Si bulk separately (including the SiO2-Si interface) for oxidized wafers contaminated intentionally with impurities of Fe, Al, and Cu prior to oxidation. The analysis showed that Al and Fe mainly segregated at the uppermost layer of the oxide, whereas Cu was distributed not in the oxide, but mainly in the Si bulk and SiO2-Si interface.
An optical backplane connection system with pluggable active board interfaces (2007)

Purpose – To present work and characterisation results from a project to develop a pluggable optical connector for board to board interconnect.