gebhart/patrepeval huggingface dataset:
Text Extraction from Bills and Invoices (2018)

This research tries to find out a methodology through which any data from the daily-use printed bills and invoices can be extracted. The data from these bills or invoices can be used extensively later on - such as machine learning or statistical analysis. This research focuses on extraction of final bill-amount, itinerary, date and similar data from bills and invoices as they encapsulate an ample amount of information about the users purchases, likes or dislikes etc. Optical Character Recognition (OCR) technology is a system that provides a full alphanumeric recognition of printed or handwritten characters from images. Initially, OpenCV has been used to detect the bill or invoice from the image and filter out the unnecessary noise from the image. Then intermediate image is passed for further processing using Tesseract OCR engine, which is an optical character recognition engine. Tesseract intends to apply Text Segmentation in order to extract written text in various fonts and languages. Our methodology proves to be highly accurate while tested on a variety of input images of bills and invoices.
Syntheses of racemic and both chiral forms of cyclopropane-1,2-d2 and cyclopropane-1-13C-1,2,3-d3 (1992)

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSyntheses of racemic and both chiral forms of cyclopropane-1,2-d2 and cyclopropane-1-13C-1,2,3-d3John E. Baldwin and Steven J. CianciosiCite this: J. Am. Chem. Soc. 1992, 114, 24, 9401–9408Publication Date (Print):November 1, 1992Publication History Published online1 May 2002Published inissue 1 November 1992https://pubs.acs.org/doi/10.1021/ja00050a020https://doi.org/10.1021/ja00050a020research-articleACS PublicationsRequest reuse permissionsArticle Views719Altmetric-Citations33LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose Get e-Alerts
N,B-Bidentate Boryl Ligand-Supported Iridium Catalyst for Efficient Functional-Group-Directed C–H Borylation (2016)

Convenient silylborane precursors for introducing N,B-bidentate boryl ligands onto transition metals were designed, prepared, and employed in ready formation of irdium(III) complexes via Si-B oxidative addition. A practical, efficient catalytic ortho-borylation reaction of arenes with a broad range of directing groups was developed using an in situ generated catalyst from the silylborane preligand 3c and [IrCl(COD)]<sub>2</sub>.
Preclinical models for defining efficacy of drug combinations: mapping the road to the clinic. (2003)

A 1-day symposium on Preclinical models for defining efficacy of drug combinations: mapping the road to the clinic was sponsored by the Developmental Therapeutics Program (DTP) of the National Cancer Institute at National Cancer Institute-Frederick on April 11, 2003. About 100 researchers attended
Novel polymeric aromatic lithium sulfonylimides as salts for polymer electrolytes (2002)

Abstract Three new polymeric aromatic lithium sulfonylimides were used as salts in high molecular weight poly(ethylene oxide) (PEO) electrolytes. Their conductivity and electrochemical stability behaviors were investigated. The electrolytes with lithium poly[4,4′‐(hexafluoroisopropylidene)diphenoxy]sulfonylimide (LiPHFIPSI) showed a better conductive performance compared with the other two lithium salts. The best conductivity was obtained for PEO/LiPHFIPSI EO/Li = 16 (1.90 × 10 −4 S/cm at 60°C). Thermal analysis indicated that the salts effectively decreased the crystallinity of PEO. Moreover, the electrolytes also had good electrochemical stability and their oxidative potential was to 5.5 V versus Li/Li + . © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 1802–1805, 2002
Design-Induced Latency Variation in Modern DRAM Chips (2017)

Variation has been shown to exist across the cells within a modern DRAM chip. Prior work has studied and exploited several forms of variation, such as manufacturing-process- or temperature-induced variation. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the design and placement of different components in the DRAM chip: different regions in DRAM, based on their relative distances from the peripheral structures, require different minimum access latencies for reliable operation. In particular, we show that in most real DRAM chips, cells closer to the peripheral structures can be accessed much faster than cells that are farther. We call this phenomenon design-induced variation in DRAM. Our goals are to i) understand design-induced variation that exists in real, state-of-the-art DRAM chips, ii) exploit it to develop low-cost mechanisms that can dynamically find and use the lowest latency at which to operate a DRAM chip reliably, and, thus, iii) improve overall system performance while ensuring reliable system operation. To this end, we first experimentally demonstrate and analyze designed-induced variation in modern DRAM devices by testing and characterizing 96 DIMMs (768 DRAM chips). Our characterization identifies DRAM regions that are vulnerable to errors, if operated at lower latency, and finds consistency in their locations across a given DRAM chip generation, due to design-induced variation. Based on our extensive experimental analysis, we develop two mechanisms that reliably reduce DRAM latency. First, DIVA Profiling uses runtime profiling to dynamically identify the lowest DRAM latency that does not introduce failures. DIVA Profiling exploits design-induced variation and periodically profiles only the vulnerable regions to determine the lowest DRAM latency at low cost. It is the first mechanism to dynamically determine the lowest latency that can be used to operate DRAM reliably. DIVA Profiling reduces the latency of read/write requests by 35.1%/57.8%, respectively, at 55°C. Our second mechanism, DIVA Shuffling, shuffles data such that values stored in vulnerable regions are mapped to multiple error-correcting code (ECC) codewords. As a result, DIVA Shuffling can correct 26% more multi-bit errors than conventional ECC. Combined together, our two mechanisms reduce read/write latency by 40.0%/60.5%, which translates to an overall system performance improvement of 14.7%/13.7%/13.8% (in 2-/4-/8-core systems) across a variety of workloads, while ensuring reliable operation.
Elastic Ray-Born L<sub>2</sub>-Migration/Inversion (1989)

The approximate ray Green's tensor in 3-D heterogeneous elastic media combined with the first-order Born approximation lead to new explicit equations for solving, modelling and inverse scattering problems. Individual wave scattering contributions (PP, PS, SP, SS) are represented for four different linear approximations (i.e. parameter linearizations). the first-order Born appoximation yields a scattered wavefield which is linearly related to medium parameter perturbations. the linearized inverse scattering problem is solved in the space-time domain and consists of minimizing a cost function within the l2 norm with a one-step conditioned gradient procedure. From uni- or multicomponent data and a reference heterogeneous background model representing adequately either the long spatial wavelengths of the medium (i.e. the smooth model), and/or its principal features (i.e. the macro-model), this operation reduces to: (1) pre-stack depth-migrating the scattered data yielding three intermediate images; and (2) deconvolving these images by an elastic Hessian correction which produces final high-resolution images representing the medium's short spatial wavelength variations convolved with the source function (e.g. P and S impedances and density maps). If the reference model and data are satisfactory, typical artefacts are due to limited aperture or insufficient coverage. Use of high-frequency and Born approximations require certain constraints. For example, the dominant wavelength must always be smaller than the characteristic length of the reference medium, but larger than the scatterer characteristic length. to increase computational efficiency, the high-frequency approximate Green's tensor is calculated by the paraxial ray method. 2-D elastic synthetic examples for surface reflection and cross-hole experiments show the ability of such a technique to delineate subsurface structure and to recover local changes in elastic properties. However, density variations are more difficult to resolve than P and S impedance or velocity changes.
Generation of Hutat2:Fc Knockin Primary Human Monocytes Using CRISPR/Cas9 (2018)

The ability of monocytes to travel through the bloodstream, traverse tissue barriers, and aggregate at disease sites endows these cells with the attractive potential to carry therapeutic genes into the nervous system. However, gene editing in primary human monocytes has long been a challenge. Here, we applied the CRISPR/Cas9 system to deliver the large functional Hutat2:Fc DNA fragment into the genome of primary monocytes to neutralize HIV-1 transactivator of transcription (Tat), an essential neurotoxic factor that causes HIV-associated neurocognitive disorder (HAND) in the nervous system. Following homology-directed repair (HDR), ∼10% of the primary human monocytes exhibited knockin of the Hutat2:Fc gene in the AAVS1 locus, the "safe harbor" locus of the human genome, without selection. Importantly, the release of Hutat2:Fc by these modified monocytes protected neurons from Tat-induced neurotoxicity, reduced HIV replication, and restored T cell homeostasis. Moreover, compared with lentiviral transfection, CRISPR-mediated knockin had the advantage of maintaining the migrating function of monocytes. These results establish CRISPR/Cas9-mediated Hutat2:Fc knockin monocytes and provide a potential method to cross the blood-brain barrier for HAND therapy.
Disparity search range estimation based on TOF-stereo fusion (2015)

Known disparity search range is a crucial parameter for many stereo matching algorithms. It is necessary to estimate the disparity search range automatically in real time systems. In this work, we present an approach to estimate disparity search range of each pixel to be matched. A dual-mode camera which can be used to take stereo images or coarse depth maps is developed in our work. Under the constraint of the coarse depth map with the same spatial resolution as the stereo pairs, expected disparity of each pixel is limited within a narrow search range. We demonstrate the effectiveness of the proposed approach on benchmark images with ground truth as well as on images captured in our lab.
A complex adaptive equalizer ASIC (2003)

An adaptive equalizer ASIC has been developed with a structure which implements either the FIR filter function or the adaptive weight generator function. The ASIC contains full complex arithmetic, saturation logic, tap leakage logic, complex conjugation, and selectable adaptation loop gain, and is cascadable without external logic. It contains 4 taps, cascadable to 8 T-spaced or 16 T/2-spaced taps, with each tap having 4 8*8 bit multipliers. The ASIC supports a 10 MHz throughput rate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Embedded firmware diversity for smart electric meters (2010)

Smart meters are now being aggressively deployed worldwide, with tens of millions of meters in use today and hundreds of millions more to be deployed in the next few years. These low-cost ( ≃ $50) embedded devices have not fared well under security analysis: experience has shown that the majority of current devices can be exploited by unsophisticated attackers. The potential for large-scale attacks that target a single or a few vulnerabilities is thus very real. In this paper, we consider how diversity techniques can limit large-scale attacks on smart meters. We show how current meter designs do not possess the architectural features needed to support existing diversity approaches such as address randomization or control flow validation. In response, we posit a new return address encryption technique suited to the computationally and resource limited smart meters. We conclude by considering analytically the effect of diversity on an attacker wishing to launch a large-scale attack, showing how a lightweight diversity scheme can force the time needed for a large compromise into the scale of years. 1
Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS (2007)

Field plates are commonly used to enhance the performance of high voltage devices and to improve the trade-off between breakdown voltage and specific on-resistance, but they typically require dedicated extra process steps. This paper presents a novel concept of field plate implementation in baseline SOI-CMOS by means of a smart layout without extra processing steps. Such layout-enabled field plates are experimentally demonstrated in a 130 nm SOI-CMOS process, showing a breakdown voltage up to 60 V (3-4x improvement compared to a traditional extended-drain MOSFET). These layout-enabled field plates allow an ultimate flexibility in device optimization, e.g. for multiple voltage domains, robust safe-operating-area and high-frequency power switching.
Building cyclotriveratrylene host molecules into network structures (2002)

Cyclotriveratrylene is a rigid bowl-shaped host molecule that can be used as a 3-connecting crystal engineering tecton by virtue of its tris-dimethoxy arrangement which may act as hydrogen bond acceptors, or chelating ligand sites. Network structures of unusual topology have resulted, and a number of common structural types are emerging. The tetragonal structure of [Fe(H2O)6]{(CH3CN)(CTV)}4(H2O)4[Co(C2B9H11)2]2 has been determined and features an unusual 3,12-connected 3D hydrogen bonded network structure, with the [Fe(H2O)6]2+ complex cation disordering to achieve the required geometry for the network. The structure of [Ag(CTV)2(H2O)3(CH3CN)2](CB11H12) has been determined and likewise conforms to a key structural type, and shows novel coordination of CTV to Ag+ centres.
Physics of amorphous silicon alloy <i>p</i>-<i>i</i>-<i>n</i> solar cells (1985)

We present a comprehensive computer simulation of amorphous silicon alloy p-i-n solar cells which has enabled us to establish the physical mechanisms governing device operation. This has been carried out by analyzing the free-carrier, space-charge, recombination rate, and electric field profiles as well as the corresponding current-voltage characteristics for a variety of device parameters and illumination conditions. We interpret these results in terms of the asymmetrical density of localized states in these alloys and its effect on the basic recombination paths. We also demonstrate that for uniformly absorbed light, cell performance is primarily controlled by the hole transport properties, and not by the sum of the carrier drift lengths, or their mobility-lifetime products. This concept of a ‘‘limiting carrier’’ also applies to the case of nonuniform illumination. Photovoltaic performance is calculated both as a function of device thickness as well as material quality. Finally, we compare the results from our simulation with those obtained from other models for these devices.
Design and Architectures for Signal and Image Processing (2009)

SCOPUS: ed.j
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys (2020)

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics (2010)

High-quality yttrium oxide (Y(2)O(3)) is investigated as an ideal high-kappa gate dielectric for carbon-based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of yttrium on sp(2) carbon framework, ultrathin (about few nm) and uniform Y(2)O(3) layers have been directly grown on the surfaces of carbon nanotube (CNT) and graphene without using noncovalent functionalization layers or introducing large structural distortion and damage. A top-gate CNT field-effect transistor (FET) adopting 5 nm Y(2)O(3) layer as its top-gate dielectric shows excellent device characteristics, including an ideal subthreshold swing of 60 mV/decade (up to the theoretical limit of an ideal FET at room temperature). The high electrical quality Y(2)O(3) dielectric layer has also been integrated into a graphene FET as its top-gate dielectric with a capacitance of up to 1200 nF/cm(2), showing an improvement on the gate efficiency and on state transconductance of over 100 times when compared with that of its back-gate counterpart.
Physical Machine State Migration (2011)

A powerful functionality enabled by modern virtualization technologies is the ability to move a virtual machine (VM) from one physical machine to another, which enables unprecedented flexibility for system fault tolerance and load balancing. However, no similar capability exists for physical machines. This paper describes the first known successful implementation of migrating a physical machine's state from one physical Linux machine to another. This physical machine state migration (PMSM) capability greatly decreases the amount of disruption due to scheduled shut-down for non-virtualized physical machines, and is more challenging than VM migration because it cannot rely on a separate piece of software to perform the state transfer, e.g., the hyper visor in the case of VM migration. The PMSM prototype described in this paper is adapted from Linux's hibernation facility. The current PMSM prototype can migrate a physical machine running the MySQL DBMS server under 7 seconds.
Deleterious Effects of Uv-B Radiation on Herbivorous Spider Mites: They Can Avoid It by Remaining on Lower Leaf Surfaces (2009)

The herbivorous spider mite Tetranychus urticae usually remains on the lower leaf surfaces of its host plants. Although terrestrial animals are generally thought to be well protected from damage because of UV radiation, insect herbivory frequently increases when solar UV-B (280-315 nm) radiation is attenuated. As UV transmission through leaves is generally low because of the accumulation of compounds that act as selective sunscreens (e.g., phenolics), we hypothesized that T. urticae avoids solar UV-B radiation by staying on lower leaf surfaces. We examined whether artificial UV irradiation and solar UV affected the survival and reproduction of T. urticae and whether staying on lower leaf surfaces was beneficial to their performance under ambient UV radiation. We found that T. urticae was not well protected from UV-B radiation, because artificial UV-B irradiation strongly decreased survivorship and egg production. More importantly; compulsory solar UV irradiation treatments also had lethal effects on T. urticae, whereas the mites could avoid them if they remained on the lower leaf surfaces of their host plants. These results showed that access to habitats protected from sunlight, such as lower leaf surfaces, is likely essential for T. urticae survival under ambient UV-B radiation. The lethal effects of solar UV radiation may also affect the population dynamics of spider mites, and habitat (resource) limitation may increase the probability of interspecific interactions, such as competition and predation. In turn, the occurrence of these interactions in sheltered areas may be associated with observed increases in herbivory under conditions of solar UV-B-attenuation.
Phosphorylation of FcγRIIA is required for the receptor-induced actin rearrangement and capping: the role of membrane rafts (2002)

Activation of Fcgamma receptor II (FcgammaRII) induces rearrangement of the actin-based cytoskeleton that serves as a driving force for FcgammaRII-mediated phagocytosis and FcgammaRII capping. To get insight into the signaling events that lead to the actin reorganization we investigated the role of raft-associated Src family tyrosine kinases in capping of FcgammaRII in U937 cells. After crosslinking, FcgammaRII was found to be recruited to detergent-resistant membrane domains (DRMs), rafts, where it coexisted with Lyn kinase and underwent tyrosine phosphorylation. Lyn was displaced from DRMs under the influence of DL-alpha-hydroxymyristic acid and 2-bromopalmitic acid, agents blocking N-terminal myristoylation and palmitoylation of proteins, respectively, and after disruption of DRM integrity by depletion of plasma membrane cholesterol with beta-cyclodextrin. Under these conditions, phosphorylation of the crosslinked FcgammaRII was diminished and assembly of FcgammaRII caps was blocked. The similar reduction of FcgammaRII cap formation correlated with inhibition of receptor phosphorylation was achieved with the use of PP1 and herbimycin A, specific inhibitors of Src family tyrosine kinases. Phosphorylation of FcgammaRIIA expressed in BHK cells, lacking endogenous FcgammaRs, was abolished by substitution of tyrosine 298 by phenylalanine in the ITAM of the receptor. The mutant receptor did not undergo translocation towards cap-like structures and failed to promote the receptor-mediated spreading of the cells, as compared to BHK cells transfected with the wild-type FcgammaRIIA. On the basis of these data, we suggest that tyrosine phosphorylation of activated FcgammaRIIA by raft-residing tyrosine kinases of the Src family triggers signaling pathways that control the rearrangement of the actin cytoskeleton required for FcgammaRII-mediated motility.