900 V/1.6 <inline-formula> <tex-math notation="TeX">${\rm m}\Omega\cdot{\rm cm}^{2}$ </tex-math></inline-formula> Normally Off <inline-formula> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ </tex-math></inline-formula> MOSFET on Silicon Substrate (2014)

In this paper, we report the device performance of a high-voltage normally off <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ </tex-math></inline-formula> MOSFET on the Si substrate. Normally off operation is obtained by multiple cycles of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm O}_{2}$ </tex-math></inline-formula> plasma oxidation and wet oxide-removal gate recess process. The recessed normally off GaN MOSFET with 3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> gate-drain distance exhibits a maximum drain current of 585 mA/mm at 9 V gate bias. The threshold voltage of the MOSFET is 2.8 V with a standard derivation of 0.2 V on the sample with an area of 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$\,\times\,$ </tex-math></inline-formula> 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm cm}^{2}$ </tex-math></inline-formula> . The gate leakage current is below <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$10^{-6}~{\rm mA}/{\rm mm}$ </tex-math></inline-formula> during the whole gate swing up to 9 V and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm I}_{{\scriptstyle{\rm ON}}}/{\rm I}_{{\scriptstyle {\rm OFF}}}$ </tex-math></inline-formula> ratio is larger than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$10^{9}$ </tex-math></inline-formula> , indicating the good quality of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}$ </tex-math></inline-formula> gate insulator. The MOSFET with 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> gate-drain distance shows a three terminal OFF-state breakdown voltage (BV) of 967 V at zero gate-source bias with a drain leakage current criterion of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$\mu{\rm A}/{\rm mm}$ </tex-math></inline-formula> . The specific ON-resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$(R_{{{\scriptstyle {\rm ON}}},{\rm SP}})$ </tex-math></inline-formula> of the device is 1.6 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm m}\Omega\,{\cdot}\,{\rm cm}^{2}$ </tex-math></inline-formula> and the power figure of merit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$({\rm BV}^{2}/R_{{{\scriptstyle {\rm ON}}},{\rm SP}})$ </tex-math></inline-formula> is 584 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">${\rm MW}/{\rm cm}^{2}$ </tex-math></inline-formula> .