UV microscope image of a 100 nm thick ZnSe semiconductor layer exfoliated using Epitaxial Lift-Off (ELO). The wrinkles on the surface are formed as a result of strain release (The ZnSe layer was initially grown on top of a MgS release layer under slight compressive strain using Molecular Beam Epitaxy (MBE). produced at Heriot-Watt University, while working with Richard Moug and Kevin Prior