Original sentence: Another application of the GMR effect is in magnetoresistive random access memory (MRAM), a type of non-volatile semiconductor memory
Edited sentence: An application of the TMR effect, which is closely related to the GMR effect, is in magnetoresistive random access memory (MRAM), a type of non-volatile semiconductor memory.By doing so, one can simultaneously achieve a larger impedance (therein matching that of circuit electronics), a larger magnetoresistance value (~10x at room temperature), and a ~0 temperature coefficient.It is also the building block for numerous spin electronics applications such as reprogrammable magnetic logic devices.TMR (Tunnel magnetoresistance) is an extension of spin valve GMR in which the (electrons) spins travel perpendicularly to the layers across a thin insulating tunnel barrier (replacing the non ferromagnetic spacer).TMR has now replaced GMR in disk drives, in particular for high areal densities and perpendicular recording, and has fueled the emergence of competitive MRAM memories