Abstract Experimental Experimental H. S. Medeiros1, R. S. Pessoa1, 2, J. C. Sagás1, M. A. Fraga1,3, *, L. V. Santos1,2, H. S. Maciel1,2, M. Massi1 and A. S. da Silva Sobrinho1 References References Results Results Acknowledgments Acknowledgments Conclusions Conclusions 1Plasma and Processes Laboratory, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil 2IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil 3Institute for Advanced Studies, IEAv-DCTA, 12228-001, S. J. dos Campos, Brazil SixCy thin films deposited at low temperature by dual DC magnetron sputtering: Effect of power supplied to Si and C cathode targets on film physicochemical properties A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied by Rutherford backscattering spectroscopy (RBS), profilometry, Fourier transform infrared absorption (FTIR) and Raman spectroscopy respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk. 0 1000 2000 3000 4000 5000 Si Si-O-Si and/or Si-O-C Si-C 45% 50% 40% 30% 0% Transmissمo (a.u) Numero de onda (cm -1) 20% 100 200 300 400 Channel 0 1 2 3 4 5 6 Yield (#/uC/keV/msr)1/2 0.5 1.0 1.5 2.0 Energy (MeV) Si C N O mafraga@ita.br Carbon Target Silicon Target Shutter Substrate holder Vacuum System Gas Line Deposition Chamber DC Power Source Gas Injection System (b) Figure 1. Photograph of the magnetron co-sputtering deposition system. 4.a) FTIR RBS 4.b) Profilometry 60% C target %Si=39,81 %C=38,89 0 1000 2000 3000 4000 5000 Si Si-C Si-O-Si and/or Si-O-C 100% 80% 70% 60% 55% 50% Transmissمo (a.u) Numero de onda (cm -1) (a) 0 10 20 30 40 50 60 70 80 90 100 0,1 1 10 C/Si % de potência no alvo de carbono teorico experimental 63% stoichiometry (a) 0 20 40 60 80 100 0 100 200 300 400 500 600 700 Vc Ic Vsi Isi (b) Corrente no alvo, IX (mA) Tensمo da discarga, Vdc (V) % de potência no alvo de carbono 0 100 200 300 400 500 600 700 Electrical Raman 400 600 800 1000 1200 1400 1600 1800 2000 0 20 40 60 80 100 120 140 160 70% C target Raman shift (cm -1) Intensidade (a.u.) (d) 400 600 800 1000 1200 1400 1600 1800 2000 0 50 100 150 200 250 300 350 400 80% C target Raman shift (cm -1) Intensidade(a.u.) (e) 400 600 800 1000 1200 1400 1600 1800 2000 0 10 20 30 40 Intensidade (a.u.) Raman shift (cm -1) 20% C target (a) SiC (TO) SiC (LO) 400 600 800 1000 1200 1400 1600 1800 2000 0 10 20 30 40 50 60 70 80 60% C target Raman shift (cm -1) Intensidade (a.u.) (c) SiC (TO) SiC (LO) 400 600 800 1000 1200 1400 1600 1800 2000 10 15 20 25 30 35 40 (b) Raman shift (cm -1) 45% C target Intensidade (a.u.) SiC (TO) SiC (LO) i. Fig. 1 and Fig. 2 show photographs and the scheme of the magnetron co-sputtering deposition arrangement used. ii. The magnetrons are disposed in parallel and angled at approximately 20º from the central axis (see Fig. 2). iii. The targets of the magnetron are made of carbon and silicon, both of high purity (99.99%). iv. As sputtering gas was used argon. The pressure was maintained fixed at 5.0 mTorr and the Ar flow rate at 10 sccm. v. The films were deposited varying the fraction of applied power in each magnetron target for a total value of 200 W. vi. RBS, FTIR, Raman and profilometry techniques were utilized to investigate film composition, chemical bonding and deposition rate, respectively. Figure