Nom Équipe 0 900 1800 0 1000 2000 3000 Channel 2% 25% 75% Nom Équipe Elaboration of Rare Earth Oxide Thin Films for Quantum Technologies N. Harada1, A. Tallaire1,2, A. Ferrier1,3 , M. Scarafagio1, D. Serrano1 and Ph. Goldner1 1PSL Research University, Chimie ParisTech-CNRS, Institut de Recherche de Chimie Paris, 75005 Paris, France 2Laboratoire des Sciences et Procédés des Matériaux (LSPM) ,Université Paris 13, 93430, Villetaneuse, France 3Sorbonne Universités, UPMC Université Paris 06, 75005, Paris, France Abstract Results and Discussion DLI-CVD for Eu3+:Y2O3 thin films Rare earth ions (REI applications: • Lighting / Screens / Lasers • Electronic devices • Scintillators • Sensors References Conclusion & Perspectives Funding Effect of doping on optical properties 515250 515500 515750 516000 516250 516500 516750 517000 517250 0 1 2 3 4 5 6 7 8 100% 75% 50% 25% 8% 5% 4% 2% 1% 0,5% 0,25% Intensity (A.U) Frequency (GHz) Thin films: • Scalability and processing Eu3+:Y2O3 thin layer, made by Atomic Layer Deposition Introduction Increasing thickness 20 40 60 0,0 0,9 1,8 2,7 Normalized Intensity (a.u) 2 theta Study of deposition temperature in Y2O3 Morphological properties of undoped Y2O3 Y2O3 (222) Y2O3 (400) Si (211) • T < 450°C : No growth = insufficient kinetics • Kinetic regime = T drives growth • Diffusion regime = sufficient kinetic • Decomposition of gaseous precursor Study of doping in Eu3+:Y2O3 • Play with the amount of precursor injected = Control the doping 28.0 28.8 29.6 0.0 0.5 1.0 1% (222) 2% (222) 4% 8% 25% 50% 75% 100% 1% (222) ! (!) 0 50 100 150 200 250 1E-4 1E-3 0.01 0.1 1 100% Eu 75% 50 % 612 nm 25% 612 nm 10% 612 nm 4% 612 nm Temps (µs) Eu Y Si (substrate) O %Eu Conclusion • Parametric study of DLI-CVD process good quality films obtained in a wide doping range • Eu3+:Y2O3 thin film properties encouraging Perspectives • Epitaxial growth to improve crystalline quality • Measure coherence properties (Spectral Hole Burning) • Towards other systems such as Y2SiO5 • Polycrystalline and columnar growth • Grain size 30-100nm 50 nm 90nm 250 nm 650 nm SEM pictures of Y2O3 thin films XRD diffractogram of Y2O3 thin film • Rutherford Backscattering Spectroscopy spectrum Check the effective doping %Eu XRD of Y2O3 (222) peak • Evolution of the growth rate with T Precursor : Y(TMHD)3 0,0008 0,0010 0,0012 0,0014 0,0016 0,0018 0,0020 0,0022 0,0024 -5 -4 -3 -2 -1 0 ln(Growth Rate) 1/T 450 500 550 650 750 850 950 1050 1150 T 5 D2 5 D1 5 D0 7 F2 7 F1 7 F0 465nm 612nm Quenching = Energy transfer from ion-ion or ion-defects • Ratio for randomly oriented Y2O3 powder : (222)/(400) = 4 • Effective ratio here : (222)/(400) > 10 Strong (111) texture of Y2O3 thin layer Experiments conducted in collaboration with JJ.Ganem and I.Vickridge, INSP • Doping goes from Y2O3 to Eu2O3 increase lattice parameter • Photoluminescence • Lifetime Normailzed intensity • Inhomogeneous linewidth Theory Eu3+ Crystal Wavelength 5 D0 7 F2 7 F1 7 F0 580.68nm 612nm Experiment • Shift and broadening of the inhomogeneous linewidth Eu3+environment changes Inhomogeneous linewidth • P. Goldner, et al., “Recent Advances in Rare Earth Doped Inorganic Crystalline Materials for Quantum Information Processing”, Zeitschrift für Anorganische und Allgemeine Chemie; Feb2018, Vol. 644 Issue 2, p66-76, 11p • S. Liu, et al., "Controlled size reduction of rare earth doped nanoparticles for optical quantum technologies," RSC Advances, 8 (2018) 37098-37104. • M. Scarafagio et al., « Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Properties for Quantum Technologies », The Journal of Physical Chemistry C 2019 123 (21) Quantum technologies (QT) with REI: • Superposition state • Quantum Computer / Cryptography • Quantum memory Classic al Bit Qubit REI properties: • Photostable centers 4f-4f transitions shielded by closed shells • Good luminescence properties • Wide range of emissions • Optical and hyperfine transitions addressable Nanoparticles : • Easier coupling to cavities o