## 6 Conclusions  
This study underscores the pivotal role of ARCs in enhancing Si-SC efficiency. By systematically investigating SLARCs, continuous MLARCs, and patterned MLARCs, we have demonstrated the effectiveness of these approaches in mitigating reflection losses and optimizing light absorption. The incorporation of NQDs within micro-/nano-patterned MLARCs further amplified light trapping and absorption, leading to substantial improvements in device performance. By combining experimental characterization and numerical modeling, this research demonstrated that the optimized patterned MLARC configuration achieved a 45% reduction in reflectivity relative to the reference Si-SC, ultimately contributing to overall performance gains. The results presented herein highlight the potential of advanced ARC technologies to significantly enhance Si-SC efficiency. While this study has focused on optical and electrical performance, future research should explore the integration of these optimized \begin{table}
\begin{tabular}{c c c c c c c c c} \hline \hline  & \multicolumn{6}{c}{**Optical Parameters**} & \multicolumn{6}{c}{**Electrical Parameters**} \\ \cline{2-9}  & \multicolumn{2}{c}{**350 (nm)**} & \multicolumn{2}{c}{**550 (nm)**} & \multicolumn{2}{c}{**750 (nm)**} & \multicolumn{2}{c}{**-**} \\ \cline{2-9}  & \multicolumn{2}{c}{**R**} & **EQE** & **R** & **EQE** & **R** & **EQE** & **J** & **PCE** \\  & **(\%)** & **(\%)** & **(\%)** & **(\%)** & **(\%)** & **(\%)** & **(\%)** & **(mA/cm\({}^{2}\))** & **(\%)** \\ \hline Si-SC & \multirow{2}{*}{51.98} & \multirow{2}{*}{43.46} & \multirow{2}{*}{41.50} & \multirow{2}{*}{56.57} & \multirow{2}{*}{35.86} & \multirow{2}{*}{63.49} & \multirow{2}{*}{25.18} & \multirow{2}{*}{12.27} \\ (no ARC) & & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{51.85} & \multirow{2}{*}{46.65} & \multirow{2}{*}{14.99} & \multirow{2}{*}{82.19} & \multirow{2}{*}{12.39} & \multirow{2}{*}{87.13} & \multirow{2}{*}{33.67} & \multirow{2}{*}{16.68} \\ (SiO\({}_{2}\) SLARC) & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{34.62} & \multirow{2}{*}{63.09} & \multirow{2}{*}{25.68} & \multirow{2}{*}{72.73} & \multirow{2}{*}{12.68} & \multirow{2}{*}{86.96} & \multirow{2}{*}{34.10} & \multirow{2}{*}{17.26} \\ (SiO\({}_{2}\) C-MLARC) & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{39.47} & \multirow{2}{*}{58.39} & \multirow{2}{*}{11.99} & \multirow{2}{*}{86.35} & \multirow{2}{*}{12.16} & \multirow{2}{*}{87.27} & \multirow{2}{*}{39.52} & \multirow{2}{*}{20.13} \\ (SiO\({}_{2}\) P-MLARC) & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{53.83} & \multirow{2}{*}{41.81} & \multirow{2}{*}{3.58} & \multirow{2}{*}{93.14} & \multirow{2}{*}{5.01} & \multirow{2}{*}{94.05} & \multirow{2}{*}{37.11} & \multirow{2}{*}{18.47} \\ (Si\({}_{3}\)N\({}_{4}\) SLARC) & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{15.89} & \multirow{2}{*}{81.16} & \multirow{2}{*}{14.65} & \multirow{2}{*}{83.94} & \multirow{2}{*}{17.52} & \multirow{2}{*}{82.07} & \multirow{2}{*}{35.54} & \multirow{2}{*}{18.02} \\ (Si\({}_{3}\)N\({}_{4}\) C-MLARC) & & & & & & & & \\ \hline Si-SC & \multirow{2}{*}{32.64} & \multirow{2}{*}{64.62} & \multirow{2}{*}{2.91} & \multirow{2}{*}{94.96} & \multirow{2}{*}{4.35} & \multirow{2}{*}{95.08} & \multirow{2}{*}{48.04} & \multirow{2}{*}{24.65} \\ (Si\({}_{3}\)N\({}_{4}\) P-MLARC) & & & & & & & & \\ \hline \hline \end{tabular}
\end{table} 
Table 9: Optical and electrical characteristics for Si-SC structures with no ARC, SLARC, continuous (C-MLARC) and patterned (P-MLARC) of SiO\({}_{2}\)/NQD/LiF and Si\({}_{3}\)N\({}_{4}\)/NQD/LiF configurations. ARC designs with strategies to address electrical and thermal losses. By combining these advancements, the realization of high-efficiency, cost-effective silicon-based solar cells can be accelerated. Conceptualization, I.H.K., A.H.S., T.I. and B.E.A.-E.; methodology, I.H.K., A.H.S., T.I. and B.E.A.-E.; software, T.I. and B.E.A.-E.; validation, A.H.S., I.H.K. and T.I. ; formal analysis, B.E.A.-E.; investigation, T.I. ; resources, A.H.S. ; data curation, I.H.K.