## 4 Results and Discussions
As this study concentrates on 5 nm NWT, three-cross-sectional areas with golden ratios are involved in the design of these experiments: (4 nm \(\times\) 4.6 nm), (5 nm \(\times\) 8.1 nm), and (6 nm \(\times\) 6.9 nm), with corresponding cross-sectional-areas 4.6\(\rm\pi\), 10.125\(\rm\pi\), and 10.35\(\rm\pi\) (nm\({}^{2}\)). In all cases, only \(<\)110\(>\) channel orientation is considered. Figure 6: \(\rm L_{G}\) with respect to \(\tau\) for NWTs with varying cross-section aspect ratios (including Phi and 1/Phi). The Si channel orientation is \(<\)110\(>\). Figure 7: Experimental design for investigation of the impact of NWT size, \(\rm L_{G}\), and oxide thickness on drain-induced barrier lowering (DIBL), \(\rm I_{off}\), \(\rm I_{on}\), and \(\rm V_{T}\). As in a tri gate (FinFETs) the on-current is closely proportional to the fin height of the fin or NWT diameter [25; 26] In view of the simulation results, it is possible to conclude that the greatest value of the drive current is associated with the NWT characterized by the shortest gate length and, furthermore, the thinnest oxide. The SS reflects the electrostatic integrity of the transistors. The NWT with a long channel and narrow dimensions has better gate control, resulting in a steeper SS. The key problem with ultra-scaled NWTs is the challenge of performance degradation, seen as degradation in the I\({}_{\text{on}}\) per lay-out pitch I\({}_{\text{on}}\) A/\(\upmu\)m while maintaining low off-state leakage. Paired with altering NWT geometric features, along with crystallographic orientation, it is possible to enhance the electron transport attributes in Si NWTs by establishing a strain in the channel [27; 28; 29]. In Figure 8, the results are given for the simulated I\({}_{\text{D}}\)-V\({}_{\text{G}}\) characteristics of a NWT (5 nm \(\times\) 8.10 nm [Phi]) with a crystallographic orientation of \(<\)110\(>\) at several tensile strain values. Evidently, in the 5% to 30% range, establishing a strain in the channel has a beneficial impact on the saturation current magnitude. Furthermore, establishing a 2 GPa tensile strain has a positive impact on NWT performance (approximately 30%) when considered in relation to the unstrained NWT. Nevertheless, the I\({}_{\text{on}}\) barely reaches the margin of the industrial target for 5 nm node; hence, contact resistance is neglected in this case. Variability in the context of contemporary nanoscale transistor science is an increasingly important context, especially in view of process deviation and the inherent attributes of semiconductor materials and interfaces. Although the NWT with Phi cross-sectional AR has unique attractive features, it is useful to compare, in detail, the impact of the individual and combined local statistical variability sources on such an NWT. Statistical variability (SV) is given rise to by numerous variables, including random discrete dopants (RDD), metal gate granularity (MGG), and wire edge roughness (WER), all of which serve to predominate within NWT behavior. Figure 9 gives V\({}_{\text{T}}\), I\({}_{\text{on}}\), DIBL, and I\({}_{\text{off}}\) distributions subject to combined SV (RDD, WER, and MGG), all of which are reflective of the gate-first technology of the NWTs listed in Table 2. Comparing the normal distribution of ensembles of 1000 microscopically different transistors simulated for each one of the nine NWTs, it can be seen that the distributions are close to Gaussian. Furthermore, the normal distributions are shifted in consistency with results of I\({}_{\text{D}}\)-V\({}_{\text{G}}\) characteristics in Figure 5, hence causing the Phi and 1/Phi ratio NWTs to have better I\({}_{\text{on}}\), DIBL, V\({}_{\text{T}}\), and I\({}_{\text{off}}\) results. This may be explained by the fact that NWTs with Phi and 1/Phi ratios have better electrostatic integrity and more mobile charge and gate capacitance. Figure 8: I\({}_{\text{D}}\)-V\({}_{\text{G}}\) curve plotted of the 5 nm \(\times\) 8.10 nm strained silicon NWT at several channel strains.