## 1 Introduction  
Silicon nitride (Si\({}_{3}\)N\({}_{4}\)) [1], indium phosphide (InP) [2], and silicon-on-insulator (SOI) [3] are pivotal materials in the realm of integrated photonic sensors, each presenting distinct benefits and limitations [4]. Silicon nitride (Si\({}_{3}\)N\({}_{4}\)) stands as a pivotal cornerstone in the landscape of photonic devices, presenting a highly adaptable platform with an expansive array of applications [5, 6]. The efficacy of Si\({}_{3}\)N\({}_{4}\) photonic devices is rooted in the distinctive optical properties inherent to this material, encompassing low optical losses, a broad transparency range, high nonlinear coefficients, and seamless compatibility with complementary metal oxide semiconductor (CMOS) technology [7, 8]. On the other hand, InP is a highly desirable material due to its direct bandgap, facilitating efficient light emission and amplification, which is essential for active photonic devices like lasers and amplifiers, thereby making it indispensable in telecommunications and high-speed data transmission. Si, while also offering low-cost and well-established fabrication techniques, is typically used for passive components due to its indirect bandgap. Nevertheless, SOI photonics has surged in popularity because it allows for the integration of electronic and photonic components into a single chip, utilizing mature CMOS technology [9]. In summary, Si\({}_{3}\)N\({}_{4}\) is superior for low-loss, broad-spectrum applications, InP is unparalleled for active photonic devices, and SOI provides a flexible and cost-effective solution for integrating electronics with photonics. The selection of the material hinges on the specific needs of the photonic sensor application, such as the required wavelength range, integration considerations, and the focus on active or passive components [10]. Ring resonator (RR) sensors offer superior performance compared to other photonic sensing devices due to their exceptional sensitivity and compact design [11; 12]. Their high quality (Q) factor allows for enhanced interaction between light and the analyte, leading to highly precise detection of minute variations in the refractive index or absorption. Unlike larger devices such as Mach-Zehnder interferometers (MZIs) [13; 14], RRs are space-efficient, enabling integration into miniaturized, on-chip platforms ideal for portable and lab-on-a-chip applications. Additionally, their design supports high multiplexing capabilities, allowing for the simultaneous detection of multiple analytes, and is compatible with cost-effective silicon photonics fabrication processes. These advantages make RR sensors a versatile and powerful choice for various high-precision sensing applications. RR sensors have been fabricated on several material platforms, including SOI, to leverage mature silicon photonics technology [15], and Si\({}_{3}\)N\({}_{4}\), due to its low optical losses and broad transparency range [16]. III-V semiconductors like InP [17] and gallium arsenide (GaAs) [18] are used due to their excellent optoelectronic properties, enabling integration with active components. Polymers [19] and hybrid plasmonic materials [20] are explored for flexible, cost-effective designs, particularly in biosensing and chemical detection. Additionally, glass and quartz substrates are utilized due to their high transparency and low optical losses, supporting high-quality sensing performance across various applications. Si\({}_{3}\)N\({}_{4}\) waveguides excel in facilitating efficient light propagation, ensuring the seamless routing of optical signals with minimal losses. RRs constructed from Si\({}_{3}\)N\({}_{4}\) showcase robust light confinement, fostering heightened light-matter interactions and finding utility in diverse applications such as sensors and filters [21; 22]. Furthermore, Si\({}_{3}\)N\({}_{4}\) modulators capitalize on the material's potent electro-optic effect, offering a dynamic means to actively control the intensity of light signals [23].