# A CMOS Multiplied Input Differential Difference Amplifier: A New Active Device and Its Applications
## 2 A Multiplied Input Differential Difference Amplifier
\begin{table}
\begin{tabular}{c c} \hline \hline \multicolumn{2}{c}{**CMOS MLT Subpart**} \\ \hline \hline \multicolumn{2}{c}{**Parameter/Transfer from\(\rightarrow\)to**} \\ \hline \multicolumn{2}{c}{**Small-Signal AC Transfer (GBW > 42 MHz)**} \\ \(g_{\text{m}\left(X\rightarrow\text{2}\right)}\) (\(V_{Y}\) = 50\(\rightarrow\)800 mV) & 45\(\rightarrow\)974 \(\upmu\)S \\ \(g_{\text{m}\left(X\rightarrow\text{2}\right)}\) (\(V_{Y}\) = 50\(\rightarrow\)\(-\)800 mV) & \(-\)80\(\rightarrow\)\(-\)2210 \(\upmu\)S \\ \(g_{\text{m}\left(Y\rightarrow\text{2}\right)}\) (\(V_{X}\) = 50\(\rightarrow\)800 mV) & 60\(\rightarrow\)1030 \(\upmu\)S \\ \(g_{\text{m}\left(Y\rightarrow\text{2}\right)}\) (\(V_{X}\) = 50\(\rightarrow\)\(-\)800 mV) & \(-\)62\(\rightarrow\)\(-\)1700 \(\upmu\)S \\ \hline \multicolumn{2}{c}{**input DC dynamical range**} \\ \(X\rightarrow\text{2}\) (\(V_{Y}\) = \(\pm\)50\(\rightarrow\)\(\pm\)500 mV) & \(-\)500\(\rightarrow\)900 mV \\ \(Y\rightarrow\text{2}\) (\(V_{X}\) = \(\pm\)50\(-\)\(\pm\)500 mV) & \(-\)600\(\rightarrow\)900 mV \\ \hline \multicolumn{2}{c}{**harmonic distortion**} \\ \(\text{THD}_{X\rightarrow\text{2}}\) (1 kHz, \(V_{Y}\) = \(\pm\)1000 mV) & 0.06\(\%\)\(\rightarrow\)1.08\% (for \(V_{X}\) = 200\(\rightarrow\)1000 mV\({}_{\text{pk-pk}}\)) \\ \(\text{THD}_{Y\rightarrow\text{2}}\) (1 kHz, \(V_{X}\) = \(\pm\)1000 mV) & 0.08\(\%\)\(\rightarrow\)1.38\% (for \(V_{Y}\) = 200\(\rightarrow\)700 mV\({}_{\text{pk-pk}}\)) \\ \hline \multicolumn{2}{c}{**input/output resistances**} \\ \(R_{X\text{,DC}}\) (any value of \(V_{Y}\)) & 100 M\(\Omega\) \\ \(R_{Y\text{,DC}}\) (any value of \(V_{X}\)) & 100 M\(\Omega\) \\ \(R_{\text{2,DC}}\) (\(V_{Y}\) = 50\(\rightarrow\)800 mV) & 1 M\(\Omega\)\(\rightarrow\)176 k\(\Omega\) \\ \(R_{\text{2,DC}}\) (\(V_{Y}\) = 50\(\rightarrow\)\(-\)800 mV) & 3 M\(\Omega\)\(\rightarrow\)140 k\(\Omega\) \\ \(R_{\text{2,DC}}\) (\(V_{X}\) = 50\(\rightarrow\)800 mV) & 66 k\(\Omega\)\(\rightarrow\)5.2 k\(\Omega\) \\ \(R_{\text{2,DC}}\) (\(V_{X}\) = 50\(\rightarrow\)\(-\)800 mV) & 107 k\(\Omega\)\(\rightarrow\)2.4 k\(\Omega\) \\ \hline \multicolumn{2}{c}{**CMOS VODB Subpart**} \\ \hline \multicolumn{2}{c}{**small-signal AC transfer**} \\ \(K_{x\rightarrow\text{O}}\left[-\right]\left(-3\text{ dB}\right)\) & 1.02 (55 MHz) \\ \(K_{n\rightarrow\text{O}}\left[-\right]\left(-3\text{ dB}\right)\) & 1.02 (62 MHz) \\ \(K_{p\rightarrow\text{O}}\left[-\right]\left(-3\text{ dB}\right)\) & 1.01 (45 MHz) \\ \hline \multicolumn{2}{c}{**input dynamical range**} \\ \(z\rightarrow\)\(o\) & \(-\)800\(\rightarrow\)700 mV \\ \(n\rightarrow\)\(o\) & \(-\)700\(\rightarrow\)700 mV \\ \(p\rightarrow\)\(o\) & \(-\)1600\(\rightarrow\)1000 mV \\ \hline \multicolumn{2}{c}{**distortion**} \\ \(\text{THD}_{z\rightarrow\text{o}}\) & 0.04\(\%\)\(\rightarrow\)0.41\% (for \(V_{x}\) = 100\(\rightarrow\)1500 mV\({}_{\text{pk-pk}}\)) \\ \(\text{THD}_{n\rightarrow\text{o}}\) & 0.07\(\%\)\(\rightarrow\)0.33\% (for \(V_{n}\) = 100\(\rightarrow\)1500 mV\({}_{\text{pk-pk}}\)) \\ \(\text{THD}_{p\rightarrow\text{o}}\) & 0.03\(\%\)\(\rightarrow\)0.11\% (for \(V_{\text{p}}\) = 100\(\rightarrow\)1500 mV\({}_{\text{pk-pk}}\)) \\ \hline \multicolumn{2}{c}{**input/output resistances**} \\ \(R_{z,n,p}\) & 100 M\(\Omega\) \\ \(R_{O}\) & 0.54 \(\Omega\) \\ \hline \hline \end{tabular}
\end{table} 
Table 1: Overall typical performance of MIDDA obtained from the measurements. Figure 6: _Cont._