## 1 Introduction  
Sapphire is widely used in optical instrument manufacturing and electronic technology because of its excellent mechanical, optical, and thermal properties. For example, sapphire can be used as an epitaxial material for growing LED lamps and epitaxial wafers on gallium nitride substrates. Sapphire is a hard and brittle material that is difficult to process. To improve the processing effect, the importance of the machining tool's wear performance should be considered. For example, [PERSON] et al. [1] investigated the wear behavior of bonded abrasive tools using a lapping-based test method. [PERSON] et al. [2] explored the wear performance of alumina abrasive wheels used to process a superalloy. [PERSON] et al. [3] explored the effect of the pressure gradient and abrasive tool wear when polishing ceramic tiles. The preparation method also plays a significant role. For example, [PERSON] et al. [4] developed a flexible abrasive tool, while [PERSON] et al. [5] compared the polishing effect of single alumina abrasive grains and alumina/metatinate abrasives with a core-shell structure on sapphire substrates, and they found that the abrasives with a core-shell structure could not only increase the MRR but also yield a better surface quality. [PERSON] et al. [6] fabricated a hydrophobic fixed abrasive pad using a layer-by-layer method. [PERSON] et al. [7] prepared fixed agglomerated diamond pads and explored the friction and wear characteristics of agglomerated diamond abrasives. To achieve a damage-free surface, chemical mechanical polishing (CMP) is an effective method. Silica oxide (SiO\({}_{2}\)) abrasive is widely used in CMP due to its low hardness, as well as good stability and dispersion. [PERSON] et al. [8] explored the effect of different Fenton reagents on the stability of a silica sol polishing solution, as well as their influence on the polishing effect of SiC wafers; it was found that, when H\({}_{2}\)O\({}_{2}\) was added to the silica sol polishing solution, the stability of the polishing solution improved, and the surface of the processed SiC wafer was smooth with a surface roughness of 0.4642 nm. [PERSON] [9] predicted the material removal rate (MRR) of CMP using a fusion network. [PERSON] et al. [10] used silica abrasives with different particle sizes to polish sapphire, and they found that the MRR increased with the increase in particle size of silica; however, silica with an excessive particle size led to a reduction in the surface quality of sapphire after processing. The quality of sapphire obtained using the SiO\({}_{2}\) abrasive with a particle size of 80 nm was best. [PERSON] et al. [11] compared the processing effect on sapphire wafers of a single silica abrasive with a consistent particle size or mixed particle size. [PERSON] et al. [12] proposed a method for polishing sapphire using SoFeIII as a catalyst, and they found that, when the polishing solution contained SoFeIII at \(-80\)\({}^{\circ}\)C, the MRR reached 7.21 um/h. Although the abovementioned methods improved the CMP method, the processing efficiency remains a big problem. Fixed abrasive tools have the advantages of a high material removal rate and high surface accuracy of the workpiece, and they are widely used in the semi-finishing process. However, the preparation process of traditional fixed abrasive tools involves dry mixing, resulting in the formed tool having the problems of uneven relative density, large differences in microhardness, and serious abrasive agglomeration. The above problems may lead to a short service life of the abrasive tool and a poor surface quality of the workpiece. [PERSON] et al. [13] studied the effect of adding different volume fractions of sodium chloride crystals to phenolic resin on the polishing performance of granite, and they found that, when the particle size of sodium chloride was 250-500 nm and the volume fraction was 20%, the effect was best after processing. [PERSON] et al.