Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes  
[PERSON]  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
[PERSON]  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
Ziez Zheng  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
Ziez Zheng  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
[PERSON]  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
Ziez Zheng  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (C.J.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); [EMAIL_ADDRESS] (J.F.)  
[PERSON]  
1 Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; [EMAIL_ADDRESS] (C.Y.); [EMAIL_ADDRESS] (Z.F.); [EMAIL_ADDRESS] (R.T.); [EMAIL_ADDRESS] (J.C.); [EMAIL_ADDRESS] (Y.Z.); [EMAIL_ADDRESS] (Z.Z.); [EMAIL_ADDRESS] (L.W.); psbpeng@scut.  
Amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printed silver source/drain (S/D) electrodes have been proposed in many reports [20; 21; 22; 23]. The experimental conclusions show a contact problem between the silver S/D electrodes and the a-IGZO active layer when using silver nanoparticles ink. The organic carbon residues are difficult to remove after the annealing process, which results in poor device performance that cannot meet the requirements of driving large-sized flat panel displays [24]. Therefore, the development of electronics fabricated with silver salt ink are of great potential in display application.  
In this work, a-IGZO TFTs with printed S/D electrodes are fabricated using a silver salt ink and silver nanoparticle ink respectively. It was found that the organic carbon could be effectively reduced at the interface by using silver salt ink, which indicates the solving of the contact problem to some extent by this manner, accordingly well-performing a-IGZO TFTs were obtained successfully and reasonably.