The concept of the memristor was further developed and experimentally demonstrated in 2008 by a team of researchers at Hewlett-Packard (HP) Laboratories [2]. The memristor device developed by HP laboratories consists of stochastic titanium dioxide (TiO\({}_{2}\)) and oxygen-deficient (TiO\({}_{2\text{x}}\)) layers sandwiched between two platinum electrodes. This device successfully demonstrated the existence of the memristor predicted by [PERSON], establishing a connection between flux (\(\Phi\)) and charge (q). The memristor resistance can vary between a low-resistance state (LRS) and a high-resistance state (HRS). These two states can be achieved by applying different voltage levels across the memristor. The resistance state R\({}_{\text{ON}}\) corresponds to the LRS, where a significant current can flow through the memristor, representing the logical level '0'. On the other hand, the resistance state R\({}_{\text{OFF}}\) corresponds to the HRS, where the current flow is significantly reduced, representing the logical level '1'. This difference in current flow between the LRS and HRS enables the memristor to store and retain information. A memristor retains its resistance value even when the power supply is disconnected. The most recently attained resistance is automatically saved in the memristor's internal state, allowing it to resume its previous resistance value when power is restored. This unique characteristic of a memristor makes it ideal for applications requiring non-volatile memory. Additionally, retaining resistance values allows for efficient and reliable data storage in various electronic devices. [PERSON] and [PERSON] categorize all resistive devices with memory as memristors, regardless of the material or physical operation mechanism [3; 4; 5; 6]. This categorization allows for a broader understanding and classification of various electronic resistive devices that utilize different storage mechanisms, such as phase-change materials, magnetic materials, and even biological systems. It also highlights the significance of memory in these devices, regardless of their specific properties or operational characteristics. A memristive device is characterized by a pinched hysteresis loop, which shows the relationship between the voltage applied across the device and the resulting current flowing through it, as shown in Figure 1[7]. This unique hysteresis loop indicates that the memristive device has memory capabilities, allowing it to retain its resistance state even after the voltage is turned off. Also, the pinched hysteresis loop is a crucial feature distinguishing memristive devices from other electronic components. The shape of the hysteresis loop is altered by the frequency and amplitude of the periodic input signal applied to the memristive device. Higher frequencies and amplitudes can lead to a more distorted hysteresis loop, while lower frequencies and amplitudes result in a smoother loop. These variations can affect the performance and functionality of the memristive device in different applications. The memristor symbol consists of a rectangle with a diagonal line running from one corner to the opposite corner, representing the non-linear relationship between charge and flux. Figure 1: Memristor hysteresis loop [7]. Memristors have gained significant attention for a wide range of applications, as they can be used to create circuits that mimic the behavior of biological synapses. One prominent application is in the field of neuromorphic computing, where memristors can mimic the behavior of synapses in the human brain, enabling the development of efficient and powerful artificial neural networks [8; 9; 10; 11; 12; 13]. These artificial neural networks can be used for tasks such as pattern recognition, image processing, and machine learning. Memristors have the potential to revolutionize the field of memory storage by providing faster and more energy-efficient alternatives to traditional storage devices like hard drives and flash memory.