## 3 Results and Discussion
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The statement concerning the nanocomposite nature of the produced films instead of alloying is supported by the analysis of XRD data. As one can see from the analysis of XRD data presented in Figure 3a, reflexes from only two crystal structures are present in the XRD pattern of (In\({}_{1-x}\)Ga\({}_{x}\))\({}_{2}\)O\({}_{3}\) films. The Ga\({}_{2}\)O\({}_{3}\)(111) reflex starts to present evidence at the x value of 0.2, and its intensity increases with the increasing x value. However, the efficiency of the signal from the In\({}_{2}\)O\({}_{3}\) phase is much higher, as compared to that from the Ga\({}_{2}\)O\({}_{3}\) phase. As a result, the intensity of reflexes from the In\({}_{2}\)O\({}_{3}\) phase is much higher, as compared to the (111) reflex from the Ga\({}_{2}\)O\({}_{3}\) phase at the x value of 0.5. The reflexes from the In\({}_{2}\)O\({}_{3}\) phase are indexes according to the JCPDS card # 06-0416 of the _bixhyite_ body-centered cubic phase with the Ia-3 space group [64], while those from the Ga\({}_{2}\)O\({}_{3}\) phase correspond to the JCPDS card # 43-1012 of the monoclinic crystal structure with the C2/m space group [65]. In the XRD patterns of the ITO-Ga films (Figure 3b), reflexes from the In\({}_{2}\)O\({}_{3}\) and SnO\({}_{2}\) phases are evidenced, while those from the Ga\({}_{2}\)O\({}_{3}\) phase are not revealed, since they are of lower intensity, as mentioned above. The (110) and (200) reflexes from the SnO\({}_{2}\) phase are indexed according to the JCPDS card # 41-1445 of the tetragonal rutile structure with the P42/mm space group [66]. Figure 3: XRD patterns of (In\({}_{1-x}\)Ga\({}_{x}\))\({}_{2}\)O\({}_{3}\) films (**a**) and ITO-Ga films (**b**). Different crystal structures form also the (In\({}_{2}\)O\({}_{3}\))\({}_{1-x}\)(MgO)\({}_{x}\) system, composed of _bixbyite_ In\({}_{2}\)O\({}_{3}\) crystallites and rock salt-type face-centered cubic MgO. Again, a comparison of images in Figure 2e,f shows an increase in the surface film roughness with the increasing \(x\)-value in this system. However, in contrast to the (In\({}_{1-x}\)Ga\({}_{x}\))\({}_{2}\)O\({}_{3}\) system consisting of only two phases, the XRD analysis of the In\({}_{x}\)Mg\({}_{y}\)O\({}_{x}\) films showed that these films contain three phases (Figure 4b). Apart from reflexes from the _bixbyite_ In\({}_{2}\)O\({}_{3}\) and the MgO phases, reflexes from a ternary MgIn\({}_{2}\)O\({}_{4}\) phase are revealed in the XRD pattern. The (111) and (200) reflexes from the MgO phase are indexed according to the JCPDS card # 87-0653 of the cubic structure with Fm-3m space group [67], while the (311) reflex from the ternary phase corresponds to the JCPDS card # 73-2414 of the spinel crystal structure with the Fd-3m space group [68]. Therefore, the XRD data suggest that the composition of the produced In\({}_{x}\)Mg\({}_{y}\)O\({}_{x}\) films differs from the (In\({}_{2}\)O\({}_{3}\))\({}_{1-x}\)(MgO)\({}_{x}\) formula set in the precursor solutions, containing an additional ternary MgIn\({}_{2}\)O\({}_{4}\) phase. Figure 4: XRD patterns of Zn\({}_{1-x}\)Mg\({}_{x}\)O films (**a**) and InMgO films (**b**). Concerning the Zn\({}_{1-x}\)Mg\({}_{x}\)O films, it was previously shown that the Mg ions are incorporated into the wurtzite ZnO structure only at low values of \(x\), while a mixture of wurtzite-type ZnMgO and cubic-type MgO nanocrystallites is produced in the Zn\({}_{1-x}\)Mg\({}_{x}\)O films at high value of \(x\)[11], as also deduced from the XRD patterns in Figure 4a. As a result, the roughness of films increases with the increasing \(x\)-value, similar to other material systems, as one can observe from a comparison of Figure 2g.h. Larger crystallites are growing in pure Ga\({}_{2}\)O\({}_{3}\) films, as illustrated in Figure 2i, and the incorporation of Al at a \(x\)-value of 0.125 in the (Ga\({}_{1-x}\)Al\({}_{x}\))\({}_{2}\)O\({}_{3}\) system does not significantly affect the growing process, as demonstrated by the image in Figure 2j.