## 1 Introduction  
Over the past few years, the construction of nano fab industries has gradually increased day-to-day across the globe. While constructing a nano fab, one must focus on decreasing the electromagnetic interference (EMI) value exclusively for international research laboratories and independent organizations. In semiconductor foundries, there are many electrical high-power cables. These cables are the basis for extremely low-frequency magnetic fields (ELF < 300 Hz) that disturb apparatuses functioning by electronic beam operation [1, 2]. Some of these tools include electron microscopes (e.g., scanning electron microscopy (SEM), which is not only used for nanomaterials characterization but also in the latest in-situ nanomaterials engineering technology), scanning transmission electron microscopy (STEM), and electron backscatter diffraction (EBSD) [3, 4]. In high-technology nano fabs, while manufacturing cutting-edge chips below 40 nm, miss operation (MO) occurs due to ELF magnetic fields in the beam shift during the measurement. To avoid MO, the International Technology Roadmap for Semiconductors (ITRS) has recommended that the maximum value for the EMI is 0.3 mG [5]. To achieve less EMI, there are two important systems: passive canceling systems [6, 7, 8, 9] and active magnetic field canceling systems [10]. Usually, the passive-shielding method is the best methodology for magnetic-field reduction in a nano fab. This paper focuses on creating a model to reduce the EMI for nano fab industries. With the rapid development of modern nano fabs, EMI has become a critical issue in setting up next-generation semiconductor foundries. It has been reported that when the CMOS progress shows a resolution of fewer than 14 nm, the ELF magnetic fields show significant impacts on semiconductor equipment such as SEMs, TEMs, STEMs, FIB writers, and E-beam writers. Therefore, the recent standard of SEMI [11] suggests that the environment's magnetic field should be maintained below 0.5 mG to prevent malfunction in such sensitive equipment. To achieve this objective, there are two different systems: the passive [12; 13; 14] and active [15] magnetic field canceling systems. In general, passive shielding is the most straightforward method for magnetic field mitigation. However, in the ELF range, shielding using ferrite composite materials significantly increases the foundry fabrication cost. Active magnetic field canceling systems provide an alternative option to alleviate the detrimental effects of ELF magnetic fields. Active canceling systems build up reverse magnetic fields whose intensity and phase are respectively equal to and inverted concerning the environmental field for real-time canceling. Energy electronic devices are very flexible and capable of handling overpower as high as 10 kW; additionally, these devices are capable of working at frequencies in the range of loads of kHz, with the control being only on the gate terminal of the devices, which makes them easily controllable [16; 17]. As technology has grown rapidly, the exposure to EMI has become a new phenomenon in the 20 th century with every human being exposed to weak electric and magnetic fields at their workplace and even at home [18]. All electronic devices and power transmission lines produce low-frequency fields in the order of 50 or 60 Hz which have two components: the electric field and the magnetic field [19; 20]. Devices such as smartphones and televisions emit these fields with a high-frequency range from 300 MHz-300 GHz, which can be harmful to living organisms [21; 22]. The radiation from these devices has a thermal effect, which raises the temperature of body tissues, damaging organs and body cells. According to the International Agency for Research on Cancer (IARC) 2002, low-frequency magnetic fields are carcinogenic [23; 24; 25; 26; 27; 28; 29; 30; 31; 32]. In 2011, the World Health Organization (WHO) and the IARC jointly stated that electric and magnetic fields increase the risk of developing brain tumors [33].