# Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS
## 5 Conclusions  
Based on the simulation results summarized above, it can be concluded that semi-enclosed gate NMOS demonstrates superior suppression of SET effects compared to conventional NMOS when tested as individual devices. Furthermore, its internal mechanisms under particle bombardment are fundamentally similar to those of other NMOS structures. Therefore, when employing semi-enclosed gate NMOS in radiation-hardened circuit design, there is no need to account for unexpected impacts arising from divergent internal mechanisms relative to other NMOS configurations. This structural compatibility allows its direct implementation in circuit design frameworks. Subsequent inverter architecture simulation analyses further validate the reliability of semi-enclosed gate NMOS for radiation-hardened circuit applications. These advantages position semi-enclosed gate NMOS as a practical and scalable solution for enhancing the radiation tolerance of critical electronic systems in aerospace, medical, and high-energy physics applications. Writing--original draft, Z.W. ; Writing--review and editing, G.L. ; Project administration, M.T. All authors have read and agreed to the published version of the manuscript. This research was funded by the National Key Research and Development Program of China (2023 YF0719600), the National Natural Science Foundation of China (U23A20322), and Hunan Provincial Natural Science Foundation (2023 JJ50009, 2023 JJ30599). +++ ==WARNING: Truncated because of repetitions==  
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