); [PERSON]ADDRESS] (A.G.P. ); [PERSON]DDRESS] (V.S.S.) [PERSON]  
1 Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentiev Ave., Novosibirsk 630090, Russia; [PERSON]L_ADDRESS] (S.V.B. ); [PERSON]_ADDRESS] (E.A.M. ); [PERSON]@nic. integrating with other materials, including nanoparticles, leads to a change in their physical properties, different from what was originally, and expands the areas of their application. For example, 2D graphene has limited application potential in optoelectronics because of its low light absorptivity and gapless property. 3D graphene has shown its application in Si-based near infra-red tunneling heterojunction photodetectors [5] and the structure of 3D graphene with germanium-on-insulator can be used as dual-enhanced photodetectors [6]. Using another way to modify graphene, namely the use of PbS quantum dots on N, S decorated graphene made it possible to create graphene-quantum dot phototransistors [7]. It is also known that BCN-based materials have a wide variety of architectures such as nanotubes, nanoribbons, nanosheets, nanowalls, foams, and nanoscrolls [3]. It should be emphasized that in the case of boron carbonitride, the ability to vary the elemental composition expands the possibilities of the above methods for modifying the functional properties of this material. However, searching for ways to achieve different compositions of BC\({}_{\rm x}\)N\({}_{\rm y}\) remains an important challenge. As is well known, binary and ternary compounds of various structures and stoichiometry can be formed in the B-C-N system. Although boron carbide is usually denoted as B\({}_{4}\)C, it has a wide area of homogeneity, and the carbon concentration, according to different authors, can be the following: 9-19 at.% C [8], 9-20 at.% C [9], and 8.6-21.6 at.% C [10], where boron carbide exists as a stable single phase. Boron carbide has a complex structure based on B\({}_{12}\) or B\({}_{11}\)C icosahedra and C-B-C, C-B-C, C-B-B, or B\(\otimes\)B (\(\otimes\)--vacancy) chains [11]. Boron nitride of hexagonal modification (h-BN) has a layered structure isoelectronic to graphite [12; 13]. The ternary h-BC\({}_{\rm x}\)N\({}_{\rm y}\) is formed on the basis of hexagonal structures of boron nitride and carbon. The unquenchable interest in BC\({}_{\rm x}\)N\({}_{\rm y}\) materials, including nanostructures, is due to the ability to tune their physical characteristics by changing the stoichiometry and bonding configurations of these compounds [3]. Since h-BN is an insulator and the graphite is a semimetal, h-BC\({}_{\rm x}\)N\({}_{\rm y}\) compounds are of interest for optoelectronics as materials with an adjustable band gap and tunable optical and electrical properties [14; 15]. Materials based on BC\({}_{\rm x}\)N\({}_{\rm y}\), having low atomic masses and covalent bonds, being simultaneously light and high strength, exhibit a hardness in a wide range of values [3; 15; 16]. It should be noted that h-BN [17; 18], B\({}_{4}\)C [19], h-BC\({}_{\rm x}\)N\({}_{\rm y}\)[20; 21] and BC\({}_{\rm x}\)N\({}_{\rm y}\)/graphene [22] coatings with high thermal and chemical stability have proven their effectiveness in metallic corrosion resistance. The steady interest in BC\({}_{\rm x}\)N\({}_{\rm y}\) films is due not only to their remarkable properties but also to the fact that it is not a simple object of both physicochemical research and technological developments. The ratio of the elements' content and the local environment of atoms in the films can be changed by applying various methods of deposition and varying the conditions of formation. One of the widely used methods of BC\({}_{\rm x}\)N\({}_{\rm y}\) film synthesis is chemical vapor deposition (CVD) including low-pressure CVD (LPCVD), plasma-enhanced radio frequency CVD (RF-PECVD), plasma-enhanced microwave frequency CVD (MW-PECVD), laser CVD (LCVD), electron cyclotron resonance plasma enhanced CVD, isothermal CVD and glow discharge plasma-assisted CVD [3; 16].