## 3 Results and Discussion
### Electrochemical Characterization  
In Figure 2a, the electrochemical performance of the as-synthesized electrode materials (INS and INSC) is compared via cyclic voltammetry (CV) curves at a fixed scan rate of 100 mVs\({}^{-1}\). The INSC-based sample exhibits a larger enclosed area under the CV curve than the INS sample, indicating better electrochemical kinetics [10]. The calculated specific capacitance values of INS and INSC at various scan rates ranging from 10 mVs\({}^{-1}\) to 100 mVs\({}^{-1}\), are shown in Figure 2b. The normalized CV curves for INS and INSC are compared in Figure S9, which shows clearly the increase in enclosed area under the CV curve for INSC compared to INS [11; 12; 13]. Notably, the obtained specific capacitance for the INSC sample (210 F\({}^{-1}\)) is significantly higher than the bare INS (112.7 F\({}^{-1}\)), which clearly shows the effect of the SWCNT framework [6]. This improvement in the specific capacitance of INS with SWCNT heterostructure is attributed to the improved usage of redox species, enhancement of electrochemically available active sites, and quick charge transfer kinetics. The synergistic and cooperative contribution of SWCNT with INS materials boosted dopant (counter-anions) diffusion and improved conducting pathways for better electrolyte accessibility, which may be the reason for boosted electrochemical performance [14]. The CV measurements of the INSC-fabricated SSC device (Figure 2c) were performed at various potential windows ranging from 0.6 to 1.2 V, leading to an increase in the active integrated area under the curve. By scanning the CV data at various potential windows, the behavior of the supercapacitor is estimated under different operating conditions. For example, scanning at a wider potential window provides information on the capacitance and energy density of the device at high voltages, while scanning at a narrower potential window can reveal the capacitance and power density at low voltages. Overall, scanning the CV data of an INSC-based SSC device at various potential windows provides valuable information on its performance characteristics, leading to the optimization of its design for specific applications. Figure 2d shows comparative galvanostatic charge-discharge (GCD) curves for INS and INSC samples. Higher discharge times observed in sample INSC (258 F\({}^{-1}\)) show better capacitance performance and match the CV result. Figure 2e shows the calculated specific capacitance values of the sample at different current densities. Figure 2f shows GCD curves of sample INSC at different potential windows, ranging from 0.6 to 1.6 V, indicating the wide operating area of the prepared SSC device. Redox reactions in the presence of hydroxide counter-electrolyte anions can be formulated as follows for the ionic charge storage behavior of In\({}_{2}\)S\({}_{3}\)[4]. SWCNTs possess unique electronic, optical, and mechanical properties, making them a popular component in heterostructures. Incorporating SWCNTs into an In\({}_{2}\)S\({}_{3}\) (INS) heterostructure can lead to various effects, such as band alignment, charge transfer, optical properties, and mechanical properties. The resulting enhancement in the electrochemical performance and mechanical stability of INS in the heterostructure is significant. The electronic properties of the heterostructure can be influenced by the SWCNTs' band alignment, which creates a built-in electric field that affects the flow of charge carriers. Furthermore, the high mechanical strength and flexibility of SWCNTs can improve the durability and flexibility of the device. The SWCNTs can also interact with INS through charge transfer, which can alter the electronic properties of the device and the valence state of the materials. The effect of SWCNTs on the valence state of the INS heterostructure is complex and dependent on various factors, including the nature of the interaction, the energy level alignment between the materials, relative positions in the heterostructure, and the chemical properties of the materials.