# Highly Adaptive Reconfigurable Receiver Front-End for 5G and Satellite Applications
###### Abstract
The presence of several wireless protocols, including as 4G, 5G, Wi-Fi, and NTN connections, requires highly adaptable front-end designs that can rapidly transition across frequency bands while reducing hardware complexity, power consumption, and system overhead [6; 13]. Reconfigurable receiver front-ends are of particular interest due to their ability to dynamically adjust key performance metrics such as gain, bandwidth, and noise figure based on real-time link requirements. Such adaptability is essential for heterogeneous networks supporting diverse applications, from massive Machine-Type Communications (mMTC) to ultra-reliable low-latency communication (URLLC) [14]. Reconfigurable architectures further enhance interference suppression and spectrum efficiency by incorporating advanced techniques such as adaptive beamforming, frequency-agile filters, and hybrid analogue-digital signal processing [5]. Within an RF receiver chain, the low noise amplifier (LNA) is a fundamental component that significantly influences system sensitivity and overall noise performance [15; 16]. Achieving an ultra-low noise figure (NF) is particularly crucial in high-frequency bands such as mmWave, where high propagation losses and atmospheric absorption necessitate stringent link budget optimisations [12]. Complementing the LNA, RF switches play a critical role in routing signals across different frequency bands and enabling transmit-receive path reconfiguration. Single-pole double-throw (SPDT) switches are commonly employed due to their ability to provide low insertion loss, high isolation, and fast switching speeds [17]. However, integration challenges, including impedance mismatches and parasitic effects, must be carefully mitigated to ensure optimal system performance. To address these challenges, recent research has explored advanced semiconductor technologies, including complementary metal-oxide-semiconductor (CMOS), silicon-germanium (SiGe) BiCMOS, and gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) processes. GaAs pHEMT technology, in particular, offers superior high-frequency performance with minimal noise degradation, making it a strong candidate for wideband and mmWave applications [18]. Several reconfigurable LNA topologies have been proposed, incorporating switched matching networks, tunable resonators, and multi-stage amplification to optimize trade-offs between gain, linearity, noise figure, and power efficiency [2; 3]. In light of these advancements, this paper presents a novel highly adaptive reconfigurable receiver front-end (HARRF) designed to support both 5G and NTN applications through a unified hardware platform. The proposed front-end integrates a switchable LNA and an SPDT switch, enabling seamless reconfiguration between X-band (8-12 GHz) and K/Ka-band (23-28 GHz). This dynamic frequency agility is particularly beneficial for satellite communication, radar sensing, and mmWave 5G applications, where stringent performance requirements necessitate flexible hardware architectures. The chosen 0.15 um GaAs pHEMT process offers an optimal combination of wideband operation, low noise, and high gain, ensuring robust performance in challenging RF environments [15; 16]. The LNA employs a three-stage cascaded topology with frequency-selective feedback networks to achieve optimal gain flatness and noise performance across both operational bands. Additionally, a switched-tuned matching network is implemented to facilitate dynamic frequency reconfiguration while minimising component overhead and insertion losses. The SPDT switch is designed with an emphasis on achieving minimal signal degradation, high port isolation, and rapid switching transitions, ensuring reliable operation in frequency-diverse environments. This study demonstrates the feasibility of reconfigurable RF front-end design through the implementation of a switched-tuned matching technique, enabling seamless frequency transitions between X-band and K-band.