# Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide
Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Y.L.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Y.L.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Y.L.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Y.L.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Y.L.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; [EMAIL_ADDRESS] (X.Z. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (Z.L. ); [EMAIL_ADDRESS] (Y.Y. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Y.Z.) Yujia Zhang  
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; zouxinhai2 sensitivity [13]. Therefore, polarization-insensitive PMs with large bandwidth, low insertion loss, and compact size, are of great interest. Recently, graphene has attracted much interest in optoelectronic devices, due to its excellent electronic and optical properties [14]. Moreover, its electrical conductivity can be tuned by electrostatic gating, as well as dielectric-metal transition, in a near-infrared regime [15]. Graphene embedded silicon modulators have been proven to be superior against traditional modulators [16; 17; 18; 19; 20]. In this paper, we propose, for the first time to the best of our knowledge, a polarization-insensitive PM based on an embedded silicon-graphene-silicon waveguide. We design a novel sandwiched waveguide structure, in which an inner waveguide is embedded into an outer one.