# Development Status of Key Technologies for Optoelectronic Integrated Circuit Manufacturing
## 3 Manufacturing of Optoelectronic Integrated Circuits
### Integration Method
#### 3.2.1 Monolithic Integration  
Since [PERSON] and Yariv realized monolithic integration in 1979 [5], monolithic integration has continued. Currently, monolithic integration solutions are heterogeneous epitaxial lasers on Si materials or III-V materials, and the integration processes are typically Butt-joint regrowth technology, bias quantum well technology, and quantum well mixing technology [32; 33; 34; 35; 36; 37; 38]. Among them, silicon-based monolithic integration incorporates Si CMOS manufacturing technology on the same silicon wafer to integrate multiple components for realizing the transmission and processing of multiple optical signals on the same chip. InP-based monolithic integration technology is mature. The energy band structure of quantum wells is changed on InP material substrates through quantum well mixing technology, docking growth technology, same active region method, and selected region epitaxy technology to realize the integration of optoelectronic components with various functions. In 1989, Kouping invented a monolithic integrated transceiver for III-V devices on silicon wafers through selective metal-organic chemical vapor deposition (MOCVD) on silicon \begin{table}
\begin{tabular}{c c c c c} \hline \hline
**Item** & & **Advantages** & & **Disadvantages** \\ \hline \multirow{4}{*}{LiNbO\({}_{3}\)} & \(\bullet\) & Low optical transmission loss & & \\  & \(\bullet\) & Excellent optical modulation characteristics & \(\bullet\) & High processing cost \\  & \(\bullet\) & Good piezoelectric, electro-optical, and & \(\bullet\) & Unable to produce on a large scale \\  & & acousto-optical effects & & & \\ \hline \multirow{4}{*}{Silicon material on insulator} & \(\bullet\) & Excellent optical properties & \(\bullet\) & Cannot emit light \\  & \(\bullet\) & Good material compatibility & \(\bullet\) & Requires mixing and integration with other materials \\ \hline \multirow{4}{*}{SiO\({}_{2}\)} & \(\bullet\) & Low refractive index & & \\  & \(\bullet\) & Low optical transmission loss & \(\bullet\) & Low integration \\  & \(\bullet\) & High coupling efficiency with standard & & \\  & single-mode fiber, and mature process & & & \\ \hline \multirow{4}{*}{Si\({}_{3}\)N\({}_{4}\)} & \(\bullet\) & Refractive index difference is moderate & \(\bullet\) & Cannot emit light \\  & \(\bullet\) & Good material compatibility & \(\bullet\) & Require to be mixed and integrated with other materials \\  & \(\bullet\) & Can receive high optical power & & \\  & \(\bullet\) & Good temperature stability of waveguide & & \\ \hline \multirow{4}{*}{Polymeric materials} & \(\bullet\) & Large photoelectric and photothermal coefficients & & \\  & \(\bullet\) & Convenient material configuration & \(\bullet\) & Easy to age \\  & \(\bullet\) & Low cost & \(\bullet\) & Poor reliability \\  & \(\bullet\) & Simple processing technology & \(\bullet\) & Poor stability \\  & \(\bullet\) & Multiple types & & \\ \hline \multirow{4}{*}{III–V semiconductor materials} & \(\bullet\) & Broad spectrum & \(\bullet\) & Small wafer size \\  & \(\bullet\) & Wide application range & \(\bullet\) & High process cost \\  & \(\bullet\) & Mature technology & \(\bullet\) & Low product productivity \\  & \(\bullet\) & Multiple product types & \(\bullet\) & Difficulty in large-scale production \\ \hline \hline \end{tabular}
\end{table} 
Table 2: Comparison of the advantages and disadvantages of matrix materials for OEIC. substrates. The technology grows compound semiconductor materials, obtains high-quality GaAs epitaxial structures on Si substrates, and gradually fabricates light emitters and light receivers on the deposited epitaxial layers, realizing a Si-based monolithic integrated optical transceiver chip [39]. In 1997, [PERSON] et al. invented a laser array, with each laser having a SiGe-graded relaxation buffer layer and a highly doped stable strained SiGe or Ge collector layer grown sequentially on a Si wafer and emitted by SiGe.