## 1 Introduction  
In the ever-evolving landscape of electronics, the pursuit of materials and device architectures capable of meeting the demands of modern technology has become increasingly pressing. Traditional silicon-based technologies have long dominated the field, powering everything from computers to smartphones. However, as the limitations of these technologies become more apparent, researchers are turning their attention to alternative materials and designs to push the boundaries of what's possible in electronic devices. One such alternative that has gained significant traction in recent years is organic electronics. Organic materials, with their unique electronic properties and inherent flexibility, hold great promise for the development of a new generation of electronic devices. Unlike their inorganic counterparts, organic materials can be easily synthesized, processed and deposited onto flexible substrates, opening up new possibilities for applications in wearable electronics, flexible displays, and biomedical devices [1; 2; 3; 4; 5]. Within the realm of organic electronics, organic field-effect transistors (OFETs) have been at the forefront of research and development [6; 7; 8]. These transistors, which rely on the field-effect principle to control the flow of electrical current, have shown great potential for applications in logic circuits, displays, and sensors. OFETs offer distinct advantages compared to inorganic transistors such as Fully Depleted Silicon On Insulator (FDSOI), Fin Field-Effect Transistors (FinFET), and Gate-All-Around Field-Effect Transistors (GAAFET). OFETs utilize organic semiconductors, which enable flexible, lightweight, and cost-effective fabrication, making them highly efficient for applications in flexible electronics and large-area displays. While OFETs may have lower carrier mobility and stability compared to their inorganic counterparts, they excel in manufacturing efficiency and adaptability to various substrates. On the other hand, FDSOI, FinFET, and GAAFET leverage inorganic materials like silicon, which provide superior performance in terms of carrier mobility and long-term stability. FDSOI transistors improve electrostatic control and reduce leakage currents compared to traditional silicon devices, offering a balance between performance and power efficiency. FinFETs, with their 3D structure, enhance performance and scalability but are less flexible in terms of substrate choices. GAAFETs, the most advanced technology, provide the best electrostatic control and performance metrics but require complex fabrication processes and rigid substrates. While OFETs may lag in raw performance, their efficiency in flexibility and cost-effectiveness makes them a compelling choice for specific applications where traditional inorganic transistors fall short. However, despite their promise, OFETs face significant challenges, including poor charge carrier mobility, limited scalability, and sensitivity to environmental factors such as moisture and oxygen [9]. As a result, researchers have increasingly turned their attention to the development of hybrid devices that combine organic materials with other functional elements to overcome the limitations of pure organic electronics. These hybrid devices, known as organic hybrid transistors, represent a new frontier in electronic device technology, offering the promise of improved performance, flexibility, and functionality. In this article, we delve into the exciting world of organic hybrid transistors, exploring their fundamental principles, technological advancements, and promising applications. We focus particularly on three key types of organic hybrid transistors: Organic Electrochemical Transistors (OECTs), Organic Light-Emitting Field-Effect Transistors (OLEFETs) and Organic Field-Effect Waveguides (OFEWs), in which OFETs play a central role.