## 3 Results and Discussion
The observed differences in surface morphology (Figure 2e,h) on the graphene samples are caused by the influence of the number of layers of crumpled graphene on the surface of the SiO\({}_{2}\)/Si substrate [38]. When using a polymer framework and liquid transfer of graphene onto an amorphous substrate, the AFM profile is similar to that of the AFM profile. Figure 2: SEM images of graphene layers obtained on a 3-inch silicon wafer (with amorphous surface due to thermal oxide film) via PA-MBE epitaxial growth (**a**). Randomly selected regions of FLG (**d**) and MLG (**g**). AFM height images and line scan profiles: the oxide surface (**b,c**), the random regions of FLG (**e,f**) and MLG (**h,i**). a certain amount of polymer residues, wrinkles and tears are present on the surface, the number of which is significantly reduced after the process of thermal annealing in the PA-MBE chamber. The liquid process of transferring graphene to the substrate contributes to the deformation of graphene layers, such as bubbles and wrinkles, often formed by the capture of water, gas, or solid nanoparticles at the interface (Figure 2h,i) [39; 40; 41]. Analysis of the graphene samples' surface transfer to the SiO\({}_{2}\)/Si substrate by the EDX method (Figure S2) demonstrates the presence of only three elements: carbon (C), oxygen (O) and silicon (Si). This indicates that we have carried out high-quality operations to cleanse graphene from contamination. According to the light transmission measurements (Figure 3a), the transmission at 550 nm demonstrates a value of 96.3% for FLG (blue curve) and 60% for MLG (black curve). The first value corresponds to a number of graphene layers between 1 (97.5%) and 2 (95.5%) [42; 43]. The second measurement indicates that we have obtained multilayer graphene with a large number of layers (more than 15) [43]. To confirm the morphology and structural quality of the FLG and MLG samples, we applied Raman spectroscopy associated with the emission (Stokes process) or absorption (anti-Stokes process) of phonons [44]. Micro-Raman spectroscopy is particularly useful in  
Figure 3: (**a**) The transmittance coefficient of graphene samples transferred on a SiO2/Si substrate as a function of light wavelength. Raman spectra (**b**,**c**), Raman maps of I2D/IG (**d**,**g**), ID/IG (**e**,**h**) ratios and 2D peak FWHM (**f**,**i**) from random areas on the continuous FLG (**b**,**d**–**f**) and MLG (**c**,**g**–**i**) transferred to a SiO2/Si substrate acquired at a laser excitation wavelength of 532 nm. obtaining information on the quality, thickness, doping levels, and strain of graphene [45; 46; 47; 48; 49; 50; 51]. Figure 3b,c shows the typical Raman spectra from SLG (red line), FLG (blue line) and MLG (black line), measured at random sections of the substrates. Several main peaks appear on the Raman spectrum of the graphene: the primary mode of vibrations in the plane, G (\(\sim\)1580 cm\({}^{-1}\)); another vibration in the plane, D (\(\sim\)1350 cm\({}^{-1}\)); the second-order overtone, 2D (\(\sim\)2690 cm\({}^{-1}\)) [45]. As known, the G peak corresponds to _sp\({}^{2}\)_-hybridized graphene, whereas the D peak arises from defects induced in a perfect _sp\({}^{2}\)_-hybridized structure [46]. Peak D is correlated with the disorder in graphene lattice. The positions of the peaks D and 2D are dispersive, so they depend on the energy of laser excitation [46]. In this paper, measurements were obtained using a laser with an excitation of 532 nm. Due to the additional forces arising from the interaction between graphene layers, as the number of layers increases, the spectrum will differ from the spectrum of single-layer graphene, namely the splitting of the 2D peak into an increasing number of modes [47]. Peak G also experiences displacement due to an increase in the number of layers [51]. Thus, to study the number of graphene layers, it is necessary to analyze the ratio of peak intensities 2D and G (I2D/I\({}_{\rm G}\)), as well as the positions and shapes of these peaks (Figure 3d,g) [50].