## 5 Conclusions  
Based on the two-photon absorption-produced and carrier-femtosecond-pulsed-laser-induced effects of single-event simulation test technology, we can see that the single-event effect of the pulse laser micro-nano electronic device simulation test is valuable in a specific sense: partly due to the reduced device process size, the integration can be enhanced, and the rate of the device can be made faster at the same time. The other way in which this test is valuable is related to the unique properties of the TPA process when the pulsed laser passes through the wafer, which means that the laser is injected directly into the specified location of the complex circuit, avoiding the influence of the metal layer's interface. This test method can enable the formation of meaningful qualitative judgments and insights relating to, for example: radiation-sensitive node identification; the reinforcement of the circuit design; the mechanisms of the validation and calibration of basic research models; space missions with the screening of electronic components and their injection in complex circuit fault to analyze error propagation characteristics, etc., which can, in electronics, resist radiation evaluation; reinforcement design verification provided in space-time; and other important information about the effects of a single event. In this study, the differences between the SPA- and TPA-induced single-event transient effects were compared based on the single-event transient effects of typical operational amplifiers. According to the results, it can be seen that the transient voltage slope slopes induced by SPA and TPA were basically the same. The energy of the SPA test with 1064 nm light was about half of the energy of the TPA test with 1260 nm light. Moreover, it can be seen from the results that, when the pulse laser energy was low, the transient voltage firstly appeared as a positive polarity pulse, and with the increasing pulse laser energy, the transient voltage pulse presented as a positive pulse with a larger amplitude. This may be related to the amount of the deposited charge. As the pulse energy increased, more charges were deposited.  
These experimental results show that the TPA SEE test technique is an effective means of testing the single-event effect of a pulsed laser in high-frequency, high-speed, and high-integration devices, which can be used in the future. Meanwhile, the Z-scanning technology of TPA SEE can use a single wavelength laser to determine the depth of the sensitive volume of the device, which has positive practical value for the device performance evaluation and anti-radiation reinforcement design.  
Figure 10: The response of the R1 to 1260 nm photons at different incident pulse energies.  
Author Contributions: [PERSON], [PERSON] and [PERSON] designed the experiments; [PERSON] and [PERSON] performed the experiments; [PERSON] and [PERSON] analyzed the data; [PERSON] wrote the paper. All authors have read and agreed to the published version of the manuscript.  
This work was funded by the National Natural Science Foundation of China (U21A20496).  
Not applicable.  
The data presented in this study are available on request from the corresponding author.  
Thanks to [PERSON] and [PERSON] for providing the devices used for the experiments.  
The authors declare no conflict of interest.