## 3 Results and Discussion
### Photovoltaic Results  
The current density results are close to those reported in [38]. A comparison of the outcomes, presented in Figure 6a,b, reveals a notably enhanced photovoltaic short-circuit current density (Jsc) for the thin films deposited for 5 min. This suggests that a 24 h dye adsorption time combined with a 5 min deposition time yielded a thicker film with effective dye adsorption. Conversely, the 3 min deposition resulted in the formation of dye/ZnO aggregates, diminishing both the short-circuit current density and the Incident Photocurrent Efficiency (IPCE). This phenomenon, where dye/ZnO particles obstruct electron flow, is a common observation in dye solar cells utilizing zinc oxide. The IPCE is a function of the light conversion efficiency, electrode injection, and counter electrode injection. The increase in deposition time led to an enhancement in the current density of the cells, suggesting that a longer deposition time improved the crystallite quality and, \begin{table}
\begin{tabular}{c c} \hline \hline
**ZnO Film** & **Electron Lifetime (ms)** \\ \hline
60 V\_3 min & 2.1 \\
70 V\_3 min & 5.4 \\
80 V\_3 min & 2.6 \\
60 V\_5 min & 1.5 \\
70 V\_5 min & 2.3 \\
80 V\_5 min & 5.1 \\ \hline \hline \end{tabular}
\end{table} 
Table 2: Electron lifetime of the films. Figure 4: Transmittance spectra for the films electrodeposited at (a) 3 min and (b) 5 min. consequently, the electron path, thereby reducing hole-electron recombination. The voltage increase was more significant at 3 min of deposition, where the increase from 60 to 70 V also raised the photocurrent conversion from 1.28 to 2.57. At 5 min, the photovoltaic values for 60 and 70 V were close. However, a reduction was observed for 80 V due to a lower Fill Factor (FF), indicating reduced stability. The open-circuit voltage (Voc) of all cells remained consistent due to the identical assembly of cells with the same electrolytes, dyes, and counter electrodes. The thin film deposited at 70 V and 5 min exhibited the highest fill factor (FF) of 0.51, indicating improved cell stability. This particular cell demonstrated the highest efficiency among the assembled DSSCs, attributed to its FF of 0.51 and short current density of 1.94 mA/cm\({}^{2}\) (Table 3). These values closely align with those found in other studies where ZnO was employed in DSSCs [35; 40]. Figure 5: (**a**) Nyquist plot for the 3 min deposition time; (**b**) Bode plot for the 3 min; (**c**) Nyquist plot for the 5 min; and (**d**) Bode plot for the 5 min deposition time. As the applied voltage increases, the mass variation of deposited ZnO decreases, particularly with more deposition time. [PERSON] et al. [41] observed that above 40 V, the mass of zinc oxide deposited on the FTO electrode stabilizes after 200 s. This occurs because the higher voltage results in a greater mass density, causing the gravitational force to become greater than the electrical field. Additionally, the deposition of more layers increases the resistance to the formation of a film on the electrode surface. This affects the thickness of the films, typically around micrometers, as observed above, and also increases series resistance, thereby reducing the overall efficiency of the assembled cells. For cells with lower series resistance (Rs), the short-circuit current density (Jsc) increased, as shown in Table 3. Conversely, for cells with higher Rs, the Jsc declined. The cells with the highest IPCE values, obtained at 80V for 5 min, exhibited a shunt resistance (Rsh) of 750 \(\Omega/\mathrm{cm}^{2}\) and a series resistance (Rs) of 163.6 \(\Omega/\mathrm{cm}^{2}\). The IPCE was calculated according to equation 5 [42]:  
\[\mathrm{IPCE}\;(\%)=(\mathrm{hc}\;\mathrm{J}_{\mathrm{sc}})/(\lambda\;\Phi), \tag{5}\]  
where \(\mathrm{hc}=1240\) (eV nm), \(\lambda\) is the wavelength (nm), \(\Phi\) is the intensity (mW/cm\({}^{2}\)), and \(\mathrm{J}_{\mathrm{sc}}\) is the short circuit photocurrent density (mA/cm\({}^{2}\)).