## 4 Conclusions  
Designing a measuring system utilizing the EGFET has clear advantages because of the low cost of production. The thin film and disk type extended gate was fabricated using CBD technique. The X-ray response of the examined samples was measured by varying the threshold voltage and measuring the continuous drain current. According to the findings, EGFETs exhibit high linearity in the threshold voltage shift with radiation dosage; however, they are less sensitive to X-ray within the absorbed dose range of 1-10 Gy, as compared to their effective implementation for detection of low absorbed doses. Furthermore, due to the dominance of the photoelectric effect in this range of energies, EGFETs respond well at low energies (100 keV). The greater photoelectric cross-section for metal than for metal oxide means that secondary electrons produced in the metal will cross into the metal oxide and contribute to the absorbed dose. To summarize, the rising dominance of photoelectric absorption and dose enhancement, as the incident absorbed dose between 9 mGy to 70 mGy, results in an increase in sensor sensitivity. According to the findings, these EGFETs may provide an acceptable response at considerably lower absorbed doses, allowing for their effective implementation in detecting low doses of several mGy utilized in diagnostic and therapeutic radiology.  
Conceptualization, N.M.A. and K.H.I; methodology, N.M.A.; software, A.S.; validation, M.K.M.A., H.A. and O.A.A.; formal analysis, A.M.A.; investigation, A.M.A.; resources, H.A., O.A.A.; data curation, N.A.K. and K.H.I; writing--original draft preparation, A.M.A.A.; writing--review and editing, N.M.A., H.A., O.A.A., K.H.I. and A.S.; visualization, N.A.K.; supervision, N.M.A. and N.A.K.; project administration, M.K.M.A., O.A.A., H.A., K.H.I. and A.S.; funding acquisition, M.K.M.A., H.A. and O.A.A. All authors have read and agreed to the published version of the manuscript.  
\begin{table}
\begin{tabular}{c c c c c c} \hline \hline \multirow{2}{*}{**Sample**} & **Absorbed Dose** & **Linearity (\%)** & \multirow{2}{*}{**Threshold Voltage** (mV)} & \multirow{2}{*}{**(mV/Gy)**} & \multirow{2}{*}{**Sensitivity**} \\ \cline{3-3} \cline{5-6}  & **(Gy)** & & & & \\ \hline \multirow{3}{*}{TF ZnO-Pb} & 1 & & 0.04 & 0.04 & \\ \cline{2-6}  & 5 & & 0.07 & 0.014 & \\ \cline{2-6}  & 10 & & 0.1 & 0.01 & \\ \hline \multirow{3}{*}{1 mm disk ZnO-Pb} & 1 & & 0.08 & 0.08 & \\ \cline{2-6}  & 5 & & 0.33 & 0.066 & \\ \cline{1-1} \cline{2-6}  & 10 & & 0.4 & 0.04 & \\ \hline \hline \end{tabular}
\end{table}
Table 3: Radiation sensing characteristics of ZnO-Pb under high radiation doses and various thicknesses.  
Figure 9: (**A**) Threshold voltage vs. dose and (**B**) sensitivity vs. dose for the ZnO-Pb thin film and the disk irradiated with high dose.  
**Funding:** The authors extend their appreciation to the Deanship of Scientific Research at Imam Mohammad Ion Saud Islamic University for funding this work through Research Group No. RG-21-09-52.  
**Institutional Review Board Statement:** Not applicable.  
**Informed Consent Statement:** Not applicable.  
**Acknowledgments:** The authors are thankful to the Deanship of Scientific Research at Imam Mohammad Ion Saud Islamic University for funding this work. The authors extend their appreciation to School of Physics, Universiti Sains Malaysia for the facilities and the technical support. The authors gratefully acknowledge [PERSON] (University of Trieste) for his kind assistance throughout this work.  
**Conflicts of Interest:** The authors declare no conflict of interest.