## 3 Results and Discussion
### Electrical Characterization
Since the current tends to take the path of least resistance, patches with low barrier height will preferentially conduct first. The effective barrier height increases when the temperature increases due to the availability of more electrons gaining sufficient energy to overcome the higher barrier height. TiSi\({}_{2}\), on the other hand, has better interface homogeneity since it was uniformly grown on silicon as a thin film with fewer defective region. This resulted in TiSi\({}_{2}\) having a more stable barrier height with the ideality factor closer to unity. The results are shown in Table 1. The homogeneous interface helps to suppress the multiple conduction paths that contributed to the variation of leakage current. However, in this study, the GNW showed a higher barrier height as compared to TiSi\({}_{2}\), therefore, the leakage current of the GNW-TMBS diode is significantly lower than the TiSi\({}_{2}\)-TMBS diode. The results are shown in Figure 5c. Theoretically, at escalating temperature, the leakage current increased linearly with the junction temperature as shown in the thermionic emission model. The model highlights the relationship of leakage current and the temperature parameters. We can see the leakage current increased linearly with temperature for both diodes in Figure 5c with the TiSi\({}_{2}\)-TMBS diode having a higher temperature influence as compared to the GNW-TMBS diode. We believe that the micro heat sink effect causes the GNW-TMBS diode to experience a lower junction temperature than the actual temperature setting, and this results in a lower temperature effect on the leakage current. Although the homogeneity of TiSi\({}_{2}\) is better than GNW, the lack of micro heat sink characteristic in TiSi\({}_{2}\) causes a much higher temperature effect on the leakage current. Another study done by [PERSON] [26] on metal with different homogeneity also showed that inhomogeneous metal would require a large carrier concentration to activate all the patches with low barrier height, while the homogenous interface requiring less carrier concentration to activate the patches. Therefore, the leakage current for the homogeneous interface could be higher than the inhomogeneous surface. The ideality factor for the non-homogenous interface is still higher compared to the homogenous interface, reaching unity at a higher temperature. Based on this explanation, the leakage current for the inhomogeneous interface could be lower than the homogeneous interface because less current can flow through the barrier due to a high activation requirement. [PERSON] [27] in his paper cited that a Schottky diode may exhibit a large leakage current, regardless of having a good ideality factor and the absence of an interface crystal defect. We have also evaluated GNW-TMBS diodes with various initial leakage current to determine the compatibility of the GNW layer for high temperature applications. From our previous studies on TiSi-TMBS diodes, the diode performance tends to degrade faster with a diode having high initial  
\begin{table}
\begin{tabular}{c c c c c c c c} \hline \hline  & **Temperature** & \multicolumn{2}{c}{_In(I) vs. V_} & \multicolumn{2}{c}{_dV/dIn(J) vs. J_ and H(J) vs. J_} \\ \hline
**Sample** & **Kelvin** & **SBH, \(\mathbf{\phi_{\text{B}}}\) (eV)** & **n** & **Rs (ohm)** & **SBH, \(\mathbf{\phi_{\text{B}}}\) (eV)** & **n** & **Rs (ohm)** \\ \hline GNW & 298 & 0.747 & 1.485 & - & 0.703 & 1.64 & 35.56 \\  & 323 & 0.772 & 1.376 & - & 0.704 & 1.64 & 31.11 \\  & 348 & 0.804 & 0.836 & - & 0.811 &  
leakage current and reaches current compliance (10 mA) even at 373 K. As can be seen in Figure S1 and Table S1, the GNW diodes showed a good leakage current performance at different temperatures in which the GNW based diodes can still maintain their leakage current specification limit above 423 K regardless of the initial high leakage current measured at room temperature owing to the GNW's superior thermal conductivity characteristic.