## 1 Introduction  
Recently, supercapacitors (SCs) with high performance, such as higher specific capacitance, faster charging and discharging, and a sustainable cyclic lifespan, have become highly necessary owing to the rapidly growing market for wearable electronics. The bendability and sustainable performance of the SCs are essential features in wearable devices. The design of novel electrode materials and assembly of the SCs could be the strategy to provide sufficient flexibility in the SCs. Transition metal sulfides (TMSs) have been attractive for SC applications due to their excellent conductivity, mechanical robustness, thermal stability, and great redox reaction activity [1; 2]. As a prominent TMS nanomaterial, indium sulfide (In\({}_{2}\)S\({}_{3}\)) could be chosen as an excellent electrode material as it possesses a layered structure with stable structural form and high electrical conductivity [3]. In our previous report, In\({}_{2}\)S\({}_{3}\) was prepared as an electrode material via a solvothermal method. However, the solvothermal method involves high temperatures during synthesis, and thereby, when adopted for the direct growth of electrode materials, NF substrates often become brittle, limiting their durability and adaptability in wearable applications [4]. Recently, 2D layered nanostructure materials have been the focus of research towards advanced electrode materials as they have a high surface-interface area, facilitating better electrochemical kinetics and charge storage. However, the material's stability in itself is a major concern for its applicability as an electrode material.  
SWCNTs are well explored toward enhancing the mechanical robustness and providing an efficient charge transfer channel, leading to more exposure of active sites while decreasing the risk of stacking or aggregation. Herein, we report the bare INS and SWCNTs-In\({}_{2}\)S\({}_{3}\) heterostructure-based electrode materials prepared by a facile, room-temperature successive ionic layer adsorption and reaction (SILAR) method. This room-temperature synthesis route yields the layered SWCNT-In\({}_{2}\)S\({}_{3}\) heterostructure directly grown on NF, which enables it to accommodate better robustness and flexibility. Furthermore, the SILAR method has benefits for controlling minute film thickness due to the consequential nature of film growth [5].  
Here, we report (i) SWCNTs incorporated into a 2D In\({}_{2}\)S\({}_{3}\) network heterostructure via a SILAR method of growth for SC applications, (ii) higher electrochemical performance of the SWCNT-In\({}_{2}\)S\({}_{3}\) heterostructure in terms of specific capacitance, excellent cyclic retention, and unvarying performance even in 180\({}^{\circ}\) bending, demonstrating remarkable flexibility. (iii) Also, commercial reliability is tested by voltage holding, leakage current, and self-discharge. Interestingly, our SWCNTs incorporated into a 2D In\({}_{2}\)S\({}_{3}\) heterostructure exhibited outstanding electrochemical performance, excellent cyclic stability, and 180\({}^{\circ}\) mechanical flexibility. Furthermore, the voltage holding capability, high cyclic efficiency, and operating power range of fabricated SSC devices demonstrate that the prepared electrode material can be an excellent candidate for next-generation energy storage devices.