## 1 Introduction  
Due to its crucial applications in fields like video imaging, biomedical imaging, network security, optoelectronic communication, and motion detection, there is a pressing need for optoelectronic devices with high response speed, broad-wavelength detection, and versatile integration [1; 2; 3; 4; 5; 6; 7; 8; 9; 10; 11; 12; 13; 14]. Conventional detectors are unable to meet the escalating demands in various domains, including high-frequency communication, information security, and cutting-edge biomedical imaging. Two-dimensional (2D) materials, as layered low-dimensional substances, enable efficient optoelectronic detection through interlayer van der Waals interactions. Moreover, traditional optoelectronic detectors typically require low-temperature operation and complex fabrication processes, but using 2D materials simplifies this process. Two-dimensional semiconductor materials have unique advantages in the field of optoelectronic detection: (I) The preparation methods of two-dimensional semiconductor materials are relatively simple and can be prepared by methods such as chemical vapor deposition (CVD) [15] or mechanical exfoliation [2; 16]. (II) The stacking between layers of two-dimensional layered semiconductor materials is not limited by lattice matching [17]. (III) The bandgap of most two-dimensional layered semiconductor materials can be adjusted by controlling the number of material layers [18]. Different types of two-dimensional semimetal materials have their unique advantages in the field of optoelectronic detection. Graphene, due to its extremely narrow bandgap, exhibits a wide optical response range, but this also results in a significant dark current [19; 20; 21]. Transition metal dichalcogenides (TMDs) come in various types, and their bandgaps can be adjusted based on the number of layers, yet most materials primarily respond to light in the ultraviolet and visible regions [22; 23; 24; 25; 26]. Black phosphorus (BP) demonstrates excellent optoelectronic properties, but it is prone to volatilization in air [27]. Hexagonal boron nitride (hBN) can be used for ultraviolet photodetection due to its wide bandgap and is often employed as a dielectric material. However, the preparation process for hBN is quite intricate [28]. To enhance the optoelectronic performance of two-dimensional transistors, researchers have explored methods such as etching and doping to modify the structure of two-dimensional materials. Among these, two-dimensional transition metal compounds, particularly Bi\({}_{2}\)O\({}_{2}\)Se, stand out due to their exceptional optoelectronic properties [29]. Bi\({}_{2}\)O\({}_{2}\)Se possesses excellent electron mobility and environmental stability. Nevertheless, Bi\({}_{2}\)O\({}_{2}\)Se photodetectors face challenges like a limited response range and higher dark current [30]. Constructing heterostructures, such as 2D/2D and 0D/2D junctions, offers a promising approach to enhance Bi\({}_{2}\)O\({}_{2}\)Se photodetectors, improving their on/off ratio and reducing dark current [31; 32; 33; 34; 35; 36; 37; 38; 39; 40]. Heterojunctions between Bi\({}_{2}\)O\({}_{2}\)Se and other 2D or zero-dimensional (0D) materials hold potential to extend the detection range and boost photoresponsivity [30]. Due to the bandgap limitation, Bi\({}_{2}\)O\({}_{2}\)Se detection performance in the infrared spectrum exhibits a noticeable decline. Quantum dots (QDs), on the other hand, can achieve effective response in the infrared spectrum by controlling magnetization. There are many types of 0D narrow-bandgap colloidal quantum dots, whose bandgap size is related to the size of the QDs, and they possess a high extinction coefficient in the near-infrared band but relatively low electron mobility. Heterojunctions formed by QDs and 2D materials can simultaneously leverage the advantages of both materials: the high-mobility 2D materials serve as carrier transport channels, while the QDs provide the device with broadband light absorption capabilities.