## 1 Introduction  
Ionizing radiation induces a plethora of effects on electronic devices, leading to several types of failures that may compromise the operation of entire systems. For instance, in space applications, systems are exposed to various energetic particles (e.g., protons, heavy ions) received from three main sources: Galactic Cosmic Rays (GCR), Solar Energetic Particles (SEP), and trapped radiation [1, 2]. These radiation-induced faults can be transient or permanent depending on the device's architecture, sensitized nodes, semiconductor materials, and degree of damage, triggered either by single interactions, Single-Event Effects (SEEs), or accumulative degradation, Total Ionizing Dose (TID) and Displacement Damage (DD) [3]. In memory devices, as data retention elements, SEEs are usually observed as the corruption of the stored data. However, other effects can be observed, such as the occurrence of damaging current increases in parasitic elements of the circuit and functional mismatches during operation. Since memory elements represent a significant percentage of chip area in modern integrated systems, understanding the radiation effects in these structures is key for assessing reliability. In Static Random-Access Memories (SRAMs), using CMOS technology, a single cell is generally implemented with six transistors. Each cell is capable of storing a bit, due to its two stable states (high and low voltage levels of cell nodes). CMOS-based electronics are commonly susceptible to latch-ups due to a parasitic structure (thyristor)that is nominally in high impedance. When an ionizing particle interacts with the thyristor, a latch-up might be triggered, and it is referred to as a Single-Event Latch-up (SEL). During this event, the thyristor enters a conducting state, firstly generating a high-current state in the cell and, just after, in the neighboring circuits. If this high-current state is not blocked, the device may have permanent damage due to thermal runaway (Joule effect) [4; 5]. In order to investigate the system's response to the induced faults, high-reliability systems are subject to thorough characterization under radiation conditions. Testing and applying mitigation techniques are imperative for systems in the space environment with consistent and dependable operation over the mission lifetime. Hence, due to their importance, test methodologies evolved over the years to accommodate the growing complexity of the devices and achieve assertive results. Experimental tests using particle accelerators became a standard step towards reliable electronics, in which developers expose their systems and fault mitigation strategies to radiation using representative fault stimuli [6]. Depending on complexity and requirements, these systems are approached differently to achieve more feasibility during the development process, ranging from simple pass/fail tests to more robust analyses with the investigation of underlying phenomena [7]. Performing the simplified screening of systems is a convenient strategy to reasonably assess the non-critical elements of a system or perform an initial characterization, reducing project resource utilization and development efforts [8; 9]. The risk of this method is estimated and accepted in the early stage of development. To achieve more accurate results, it is important to provide comprehensive test stimuli [10]. Moreover, to improve the experimental setup capabilities and test coverage, further tests with dedicated equipment are required, in which precise and configurable measurements are possible [11]. Finally, for a better understanding of the SEE response, enhancing observability is an essential aspect to be addressed, as further discussed in this article. In this work, we present compact experimental instrumentation to perform the SEL testing of memories with extended observability to report other radiation-induced faults and synchronization to correlate these faults with the monitored current behavior.