## 1 Background  
The discovery of polymers has given a new dimension to the present era: this relatively young subdivision of chemistry has been the topic of great development both as a basic and applied science over last five decades [1; 2; 3; 4; 5; 6]. Generally, polymers are best known for their insulating properties because of the covalent bonds between the saturated carbon atoms. Since the properties of polymers can be altered by incorporating additives such as nano-fillers, many polymer frameworks were tailored and conveniently attained polymers with conducting/semiconducting behaviors with tunable properties opened new specialized applications in electronics [7; 8; 9]. The polymer structures with high-\(k\) dielectric behaviors were developed to create new interfaces in technological fields. The structural tunability of polymers in micro/nano electronics to develop miniature modules is always a challenging theme, where the polymers can be utilized not only as insulators, but also as conductive interfaces with the optimal tuning of electrical, mechanical and dielectric properties [10; 11; 12; 13; 14; 15; 16]. For a general understanding, the scale of the \(k\) value is fixed on the dielectric constant of silicon dioxide (SiO\({}_{2}\)). The relative dielectric constant of silicon dioxide is 3.9, and the materials which possess \(k<3.9\) are commonly termed as low-\(k\) materials and those whose \(k>3.9\) are categorized as high-\(k\) materials [17; 18; 19]. Embedding high-\(k\) inorganic/organic hybrid nanomaterials into the dielectric polymers results in dielectric polymer nanocomposites with superior dielectric properties and high-breakdown strengths/high-energy density for suitable electronic applications [20; 21; 22; 23; 24; 25; 26; 27]. Silicon dioxide (SiO\({}_{2}\)) has been broadly utilized as a gate oxide material in metal-oxide-semiconductor field-effect transistors (MOSFETs). In recent decades, the gate capacitance of the silicon dioxide gate dielectric was improved by minimizing the size and thickness of the dielectrics in order to enhance the device performances [28; 29; 30]. Various high-\(k\) materials are used by replacing SiO\({}_{2}\) to diminish the leakage current and boost the power consumption, which perceptibly increases the gate capacitance of MOSFETs. The capacitance \(C\) of the parallel plate capacitor is given by Equation (1):  
\[C=\frac{\kappa\epsilon_{0}\text{A}}{t} \tag{1}\]  
where \(\kappa\) is the relative dielectric constant of the material used (= 3.9 for SiO\({}_{2}\)), \(A\) is the area of the capacitor and \(t\) is the thickness of the capacitor oxide insulator [31; 32]. Since the dielectric polymer possesses a high electrical breakdown strength and the magnitude of total energy storage density, it depends on both the values of \(\kappa\) and the applied electric field, as polymer-based capacitors have proven their advantages over ceramic and electrolytic capacitors [33; 34; 35]. It is very important to know two main electrical parameters, the dielectric constant (\(\epsilon\)') and dissipation factor (\(\epsilon\)'), for microelectronic polymer dielectrics. The dielectric constant of a material can be defined as the ratio of the absolute relative permittivity of the material to the electric permeability of free space (i.e., vacuum). The magnitude of \(\epsilon\)' depends on the amount of mobile (polarizable) electrical charges and the degree of mobility of these charges in the material. The \(\epsilon\)' is temperature dependent, because the charge mobility depends on the temperature, the polarization of the material requires a finite amount of time, and frequency of the applied electric field [36; 37; 38]. In addition, it influences the measured dielectric constant. The signal propagation velocity is given by Equation (2):  
\[V_{p}=\frac{C}{\sqrt{\epsilon^{\prime}}} \tag{2}\]  
where \(V_{p}\) is the velocity of propagation and C is the speed of light.