## 1 Introduction  
The single-event effect, caused by high-energy charged particles impinging on the sensitive circuits of devices, threatens the stability of space-applied electronic systems. In order to fully understand these single-event effects and predict their effects on circuit systems, sufficient experimental studies and analysis using accelerator tests are required. However, due to the limited availability of heavy ion accelerators and their high cost, the performance of experimental studies has been hindered. Therefore, methods that can replace this method of analysis are gradually being sought and developed in research. In recent years, the pulsed laser has become a universal testing method for studying microelectronic devices and circuits [1]. Although the particle accelerator test method is still the standard test for single-event effects, its cost and particle accelerator, which is suitable for the SEE test, can limit the complete characterization of electronic devices and circuits. At the same time, the device is exposed to a high-flux radiation environment in the accelerator test, which destroys the device and leads to the attenuation of its performance. In addition to being more stable and effective, the pulsed laser test also enables the in-depth study of the spatial and temporal characteristics of SEEs, which cannot be achieved by the wide-beam particle test. Similarly, if the pulse laser energy is not particularly high, the device's damage can be completely avoided. In summary, the pulsed laser single-event effect has become an important testing method, which is a powerful supplement to the heavy ion test method. Compared with heavy ion accelerators, the perturbation induced by a pulsed laser in electronic devices has the following advantages: the precise control of the spatial and temporal indexes of the injection point, a long time period for its use, and the prospect of effective and low-cost experiments. The process of charge generation induced by the pulsed laser on a semiconductor is a physical process, which is completely different from heavy ion irradiation, which works through the photoelectric effect rather than particle scattering. However, pulsed lasers can also induce SEEs in electronic devices, which can simulate these single-event phenomena caused by heavy ions and establish a relationship between the heavy ion parameters and laser parameters [2,3]. Single-photon absorption (SPA) and two-photon absorption (TPA) are two characterization techniques used mainly for pulsed laser single-event effects. The pulsed laser test is usually carried out by using a laser wavelength above the band gap. The wavelength is above the band gap of the materials, and the photon absorption is mainly based on [PERSON]'s law. That is, when the photon is incident on the semiconductor, each photon absorbed produces an electron hole pair, which is called single-photon absorption [4]. However, the limiting factor for the selection of this method is that the total penetration of the pulsed laser decays exponentially after it is incident on the surface of the device under test (DUT), which requires that the test should be carried out from the front of the device under test. In this process, the pulsed laser passes through all the material covering the device. As the metal layer of the device increases, pulsed laser testing from the top side becomes difficult or impossible. Because of this limitation, the single-event effect test method of two-photon absorption (TPA) has gradually become the focus of current research. The TPA test uses a femtosecond pulse laser test with the peak power of the wavelength in the sub-band gap. For light wavelengths lower than the band gap of the semiconductor materials, almost no carriers can be generated at a low light intensity. However, if the laser is strongly focused, the intensity of the incident light is greatest in the region near the focal plane, where the semiconductor material absorbs two photons at the same time, creating an electron hole pair.