# Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT
After the explosion, a large number of Iraqi military electronic equipment near the blast site suddenly failed [14]. In the 2003 Iraq War, U.S. forces used electromagnetic pulse bombs to paralyze the television broadcasting system of the Iraq National Television for a period of time [15]. The two attack cases have one thing in common, that is, the overall electronic equipment did not appear to be damaged, but some of the electronic devices inside of the equipment were mysteriously destroyed. In September 2001, Rosoboron Export Company of Russia exhibited a mobile microwave radio frequency (RF) beaming system named \"Ranets-E\", which can reduce the accuracy of weapons within a distance of 10 km. The output power is above 500 MW, and the transmission pulse width is 10-20 ns [14]. At present, the study of the self-heating effect mainly focuses on the degradation of performance and ways to weak this negative effect. [PERSON] et al. studied the negative differential conductance (NDC) phenomenon caused by self-heating, and gave a new structure that suppresses the effect [16]. [PERSON] et al. developed a charge control model for thermal analysis of GaN HEMT and found that the increase in temperature will decrease mobility [17]. [PERSON] et al. developed a large-signal model of GaN HMT, which takes into account the performance degradation caused by temperature rise and can accurately predict self-heating-induced current dispersion [18]. [PERSON] et al. plated a diamond layer above the passivation layer for GaN HEMT, which can improve heat dissipation [19]. Due to its military value, the study of HPM effects has also become a hot spot in recent decades. [PERSON] et al. studied the thermal characteristics of the GaN HEMT device under the electrical pulse of different duty cycles and frequency and found that low duty cycle and high-frequency operation are beneficial in improving lifetime and performance reliability [20; 21]. [PERSON] et al. found that HPM can cause the non-linear response of HEMT, and the research results show that the cause of this phenomenon is tunneling and impact ionization [8]. [PERSON] et al. studied the impact of HPM radiation on CMOS and established a numerical model that can calculate the internal dominant current [22]. [PERSON] et al. applied HPM pulses to the GaN HEMT to study the damage of thermal stress to the device, and the results showed that the field plate near the gate is a vulnerable area [23]. However, these two thermal effects have different mechanisms and effects on semiconductor devices, which were not mentioned in the previously reported work. In this paper, an enhancement-mode p-gate GaN HEMT model is established. The enhancement-mode (E-mode) GaN HEMTs possess inherent advantages including low power consumption, enhanced system safety, better frequency characteristics, and simple circuit configuration compared with the depletion-mode (D-mode) devices [24]. The distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate analyzing the mechanical behavior of the two effects from a physical point of view and compare their differences. The simulation results are verified by previously reported work and provide an important reference for the future research of HEMT device damage location prediction and reliability reinforcement.