## 3 Results and Discussion  
Properties of the thin films and disks: Figure 2 shows the FESEM images for the morphology of ZnO-Pb thin films deposited on glass substrates and for disks prepared by using CBD. The thin film's morphology consists of hexagonal crystal formations that are perfectly aligned and tightly packed nanorods. This result agrees with a previous work [21]. The fractional atomic percentage of the ZnO-Pb thin film was determined by using the (EDX) technique. Figure 2A also shows the EDX results of the ZnO-Pb thin film. Figure 2B presents that in the FESEM micrographs of the ZnO-Pb disk type images, the ZnO-Pb grains appeared as a homogeneous nanorod shape. The same figure also shows the fractional atomic percentage of an investigated ZnO-Pb disk type obtained via EDX procedures. Equation (5) was used to determine the Zeff of the studied samples, which was found to be 72.5. Figure 3A represents the crystalline peaks of ZnO-Pb for thin films. The diffraction peaks observed at diffraction angles 26 of 31.37\({}^{\circ}\) and 36.22\({}^{\circ}\) correspond to (100) and (101) plans of the ZnO-Pb thin film. The amorphous nature of the thin film pattern is due to the lack of thin film thickness. On the other hand, Figure 3B shows the diffraction peaks of the disk type powder at angles 20 of 31.66\({}^{\circ}\), 34.34\({}^{\circ}\), 36.16\({}^{\circ}\), 47.46\({}^{\circ}\), 56.45\({}^{\circ}\), and 62.71\({}^{\circ}\) corresponding to the (100), (002), (101), (102), (110), and (103) plans of ZnO-Pb disk,  
Figure 1: The connection used in this work for EGFET. respectively. The essential characteristics of the diffraction patterns are identical, but the relative strength of the diffraction peaks rises as the film thickness increases [22]. The average crystal size of the nanostructured ZnO-Pb, as calculated from the Scherrer formula Equation (4), is shown in Table 1.  
As shown in Figure 1, the ZnO-Pb thin film (TF) and disk type (1 mm) were selected as EGFETs and applied as radiation sensors. The radiation sensitivity of the membranes was tested using various radiation doses (9, 36.5, and 70 mGy). As illustrated in Figure 4A,B, the results of these measurements were converted into I-V curves in both linear and saturation regimes (B). The linear regime was reached with a steady drain-to-source voltage (V\({}_{\text{ds}}\)) of 0.3 V and the saturation regime with a fixed gate-to-source voltage (V\({}_{\text{gs}}\)) of 3 V. The linear regime curves show a shift of the threshold voltage to the left by increasing the absorbed dose, while the saturation regime curves show the current increased by increasing the doses of radiation up to 70 mGy for the low absorbed dose. This increasing of the current in the saturation regime can be due to electron-hole pairs being formed during irradiation, resulting in higher electrical properties such as current [23]. The effect of the absorbed dose led to increment of the current; these modifications are greatly influenced by the internal composition of the ingested chemicals. The interaction process of X-rays with substances is essentially based on electronic excitation, electronic ionization, and atomic movement of outer electrons [24]. The ZnO-Pb thin film showed an increment in optical density up to the current level, less than 1.2 \(\times\) 10\({}^{-3}\) A under absorbed dose 70 mGy, whereas thicker films 1 mm ZnO-Pb sustained higher level of current 1.4 \(\times\) 10\({}^{-3}\) A with a standard error varied from 3.4 \(\times\) 10\({}^{-4}\) A for thin film to 8.546 \(\times\) 10\({}^{-4}\) A for 1 mm thickness under the same absorbed dose and revealed detectable changes in its electrical characteristics. This is due to the fact that the deterioration is more severe with greater dosage and thinner films [25]. The change in the current \(\Delta\)I for the thin film was found to be 85 uA; this amount increased for 1 mm thickness to reach 172 uA.