# Radiofrequency Performance Analysis of Metal-Insulator-Graphene Diodes
## 1 Introduction  
Graphene is a two-dimensional (2D) gapless material with outstanding transport properties, such as a high-carrier mobility and low surface resistance [1]. Graphene-based devices are suitable for high-frequency electronics applications with relaxed dimensions, such as amplifiers, power detectors, frequency multipliers, mixers, and phase shifters, among other circuits [1, 2, 3].  
Metal-Insulator-Graphene (MIG) diodes are characterized by a bias-induced barrier height modulation at the graphene-metal interface, which dominates their performance [4]. Compared to conventional Metal-Insulator-Metal (MIM) diodes, the current-voltage (I-V) curve of MIG diodes presents enhanced zero-bias nonlinearity and responsivity, mainly due to the physical phenomena at the graphene-insulator interface [4].  
An additional advantage of MIG diodes over their conventional counterparts is their versatility for fabrication on various substrates, including kapton [5], silicon, polyamide [6], and quartz [7]. This flexibility, combined with their high-current-driven capability [5] andlow junction capacitance [6], makes them attractive for high-frequency applications, such as radiofrequency (RF) power detection.  
RF power detectors are essential blocks for collecting and measuring the electromagnetic energy of RF signals in applications such as RF identification (RFID), wireless communication, and energy harvesting [8]. To achieve optimal performance in these applications, power detectors are characterized by performance metrics such as operating frequency, dynamic range, sensitivity, tangential responsivity, and DC power consumption [9]. Precise power detectors have been demonstrated for both the square-law operation at low input power levels and the lineal regime at high powers [10]. Rectifying diodes have been widely employed to implement power detectors, showing, for example, a linear relationship between input power (\(P_{\text{in}}\)) and output voltage (\(V_{\text{out}}\)) at frequencies of 500 MHz up to a power level of \(-10\) dBm [11], and a quadratic \(P_{\text{in}}\)-\(V_{\text{out}}\) response at power levels from 0 to 20 dBm for operating frequencies from 5 GHz to 6 GHz [12]. Regarding MIG diodes, dynamic ranges as high as 50 dB and tangential responsivities ranging from tens to a few hundreds of V/W have been reported around 2.4 GHz, whereas at 60 GHz, the rectifying capability decreases to 15 V/W [13; 14]. Additionally, under DC conditions, voltage responsivities ranging from 10 V\({}^{-1}\) up to a record 71 V\({}^{-1}\) have been achieved [15].  
In this work, performance projections of RF power detectors using MIG diodes based on a computer-aided design (CAD) tool calibrated with experimental measurements from fabricated devices are presented. The study is organized as follows: Section 2 presents the device and compact model calibration under static and dynamic conditions. Section 3 includes performance projection studies based on the model under different RF signals in a power detector. A discussion is included for each set of results. Section 4 draws the conclusions of this work.