## 1 Introduction  
Technological developments bring smaller and faster devices in integrated circuits that operate at reduced bias voltages. However, they also suffer from increased susceptibility to neutrons. These neutrons can cause single event effects (SEEs) on the integrated circuits, rendering their temporary loss of function. Such temporary loss of function may be a critical issue in many applications, especially for implanted medical electronics such as pacemakers [1]. Consequently, radiation tests are becoming necessary to ensure reliable applications of these circuits, especially in applications where their exposure to radiation intensity might be higher. An example of radiation test can be found in Intel. [PERSON] et al. reported their radiation test results in Intel, demonstrating that radiation-induced soft error rate (SER) improvements in the 14 nm generation high-k+ metal gate as compared to the bulk tri-gate technology [2]. Its taller and narrower structure minimized the charge collection owing to a smaller, sensitive volume. There are many more reported radiations tests as can be seen in the annual workshop on soft error Silicon Errors in Logic--System Effects (SELSE). The SELSE workshop provides a forum for discussion of current research and practice in system-level error management. Participants from industry and academia explore both current technologies and future research directions (including nanotechnology). SELSE is soliciting papers that address the system-level effects of errors from a variety of perspectives: architectural, logical,circuit-level, and semiconductor processes where several companies are reporting their radiation tests in the workshop. However, a fast neutron test that resembles normal operating conditions is expensive due to the long test duration, and the test can only be done in limited facilities such as TRIUMF (Vancouver, BC, Canada; up to 400 MeV neutrons), Los Alamos Neutron Science Center (LANSCE, Los Alamos, NM, USA; up to 750 MeV neutrons), and ISIS Neutron and Muon Source (Oxford, UK; up to 400 MeV neutrons). Proton facilities, however, are easier to access worldwide. Another advantage of using protons to replace neutrons for SEE testing is that the protons are charged particles which can be easily accelerated and focused. [PERSON] et al. showed the possibility and challenge of using a medical proton facility to do SEE testing [3]. In fact, the use of protons to study the radiation effect on electronics in various radiation environments has been practiced. [PERSON] et al. proposed that 200 MeV proton can be used to mimic the radiation environment at low Earth orbit (LEO) [4], and National Aeronautics and Space Administration (NASA) used 200 MeV proton to perform their SEE tests, and successfully screened thousands of electronic parts at Indiana University Cyclotron Facility (IUCF, Bloomington, IN, USA) even though the previously reported SEE failures were due to heavy ions [4]. The SER in integrated circuit can be estimated by dose (or energy deposited) convoluted with energy-specific linear energy transfer (LET) [5]. In a radiation hardness test, the dose can be controllable by flux, but the LET is the characteristic of particles with specific energy. LET expresses the characteristics of a particle's path through materials. It is defined as the energy being transferred to a material by an ionizing particle as a function of distance and material density, in units of MeV-cm\({}^{2}\)/mg. [PERSON] et al. showed that LET is the key index of SER in high-speed digital logic integrated circuits (ICs) [6]. [PERSON] et al. also showed the correlation of LET and single event upset (SEU) in floating gate cells [7]. In addition to LET, the specific secondary particles can also be important because it can create different kinds of defect in the materials in integrated circuits [3]. In this work, we examine the possible use of a medical proton test facility to replace the fast neutron test at sea level using the Monte Carlo simulation known as Geant4.