###### Abstract
\begin{table}
\begin{tabular}{c c c c c} \hline \hline
**Materials** & **Deposition Technique** & **Temperature [\({}^{\circ}\)C]** & **TCR [\(\times\)10\({}^{-4}\) K\({}^{-1}\)]** & **Refs** \\ \hline Pt & RF magnetron sputtering & - & 38.5 & [9] \\ Ti/Pt & Sputtering & \(-70\)–\(600\) & 22.7 & [10] \\ Pt & / & 25–\(90\) & 22.18 & [11] \\ Pt & Electro-magneto sputtering & 20–\(540\) & 39 & [12] \\ Ni & dc magnetron sputtering & 20–\(120\) & 63 & [13] \\ Ni & Screen printing & 0–\(200\) & 30 & [14] \\ Ni & dc magnetron sputtering & 25–\(200\) & 30 & [15] \\ Ni & dc magnetron sputtering & 0–\(400\) & 50 & [16] \\ Ti & Arc ion plating & - & 19.7 & [17] \\ Al & Magnetron sputtering & - & 17.14 & [17] \\ Al & dc magnetron sputtering & 0–\(140\) & 43.3 & [18] \\ Al & Thermal evaporation & 25–\(31\) & 37.9 & [19] \\ Cu & Thermal evaporation & 25–\(31\) & 38.2 & [19] \\ Au & Thermal evaporation & 25–\(31\) & 33.5 & [19] \\ Pd & dc magnetron sputtering & \(-180\)–\(230\) & 15 & [20] \\ Ni-Cr & RF magnetron co-sputtering & 25–\(95\) & 30 & [21] \\ Ni-Cu & Magnetron sputtering & 20–\(260\) & \(\sim\)56 & [22] \\ Ti-W & dc magnetron sputtering & 25–\(100\) & 20 & [23] \\ Cu\({}_{2}\)O & Femtosecond laser reduction patterning & 20–\(70\) & \(-55\) & [24] \\ V\({}_{1.85}\)W\({}_{0.15}\)O\({}_{5}\) & RF magnetron sputtering & 0–\(700\) & 34.5 & [25] \\ W/WO\({}_{3}\) & dc magnetron sputtering & 0–\(200\) & 8.16 & [26] \\ ITO & RF sputtering & 0–\(900\) & 21.51 & [27] \\ Ni-ZrO\({}_{2}\) & Metallo-organic deposition & 20–\(300\) & \(\sim\)36.6 & [28] \\ Silicon & PECVD & \(-40\)–\(125\) & 16.25 & [29] \\ Carbon Nanotube & CVD & 22–\(200\) & 10.3 & [30] \\ \hline \hline \end{tabular}
\end{table} 
Table 1: Research status of thermal resistance. The temperature measurement mechanism of metal thermal-resistant films is that the vibration of metal atoms increases with the rise in temperature, and the scattering of electrons by lattice increases, leading to the increase in metal resistance. Therefore, the change in temperature can be reacted according to the change in resistance. [PERSON] [10] introduced the effects of sputtering power and pressure on the growth, morphology, and electrical properties of the microstructure of Pt thin films. Pt thin films grow in columns at a high Ar pressure with a rough surface, contrary to thin films deposited at 0.5 Pa. It was shown that the increase in pressure and the decrease in power lead to a higher conductivity and higher temperature resistivity (TCR). In addition, the effects of two different substrate materials, thermal silicon oxide, and Al\({}_{2}\)O\({}_{3}\) ceramic on the electrical properties and the growth of crystalline films were also discussed. The Pt film deposited on the Si substrate showed a (100) orientation, while the Pt film deposited on the Al\({}_{2}\)O\({}_{3}\) substrate grew preferentially with the (111) peak. It is often noted that the sensitivity of thin films deteriorates as the device size decreases compared with that of single-crystal thin films. To overcome this problem, [PERSON] studied the relationship between the deposition temperature and crystal structure in depth. Pt thin films with a thickness of 400 nm were prepared by magnetron sputtering on a sapphire single-crystal substrate (0001) and heated from 300 \({}^{\circ}\)C to 540 \({}^{\circ}\)C. [PERSON] [12] found that the matrix temperature plays a key role in obtaining a high TCR, and the optimal value of the TCR obtained at 540 \({}^{\circ}\)C was 39 \(\times\) 10\({}^{-4}\) K\({}^{-1}\), while the high bonding strength and low surface roughness were maintained. [PERSON] [15] used the DC magnetron sputtering method to prepare thermal-resistant nickel films at a low temperature. The results showed that compact and uniform nickel films can be prepared at room temperature. The thermal resistance coefficient of the Ni thin film prepared at room temperature was about 30 \(\times\) 10\({}^{-4}\) K\({}^{-1}\) and had good repeatability at a circulating temperature.