## 1 Introduction  
Heading towards mass fabrication for the next nano electronic devices, ultraviolet (UV) curing nanoimprint lithography is one option for the pattern generation of electronic circuits on wafers. In UV curing nanoimprint lithography, the mold of quartz or polymer is used as the template. The fluorinated alkyl silane as a fluorinated self assembled monolayer was coated on the template with one of the surface modification techniques in UV curing nanoimprint lithography. UV curing nanoimprint resist materials are dispensed as droplets on underlayer materials, and then are set with the template with low pressure. The nanoimprint resist materials fill the template and are then solidified by brief UV irradiation, forming the desired pattern. These processes are repeated across the wafer, similar to the step and repeat lithography process. UV curing nanoimprint lithography is a promising method recently used for next generation device manufacturing because it is of low production cost, high throughput and can be carried out at room temperature. In addition, UV curing nanoimprint lithography takes advantage of the synergetic effects of micro- to nano-sized patterns on various flexible substrates, three-dimensional patterns, direct patterns of metal, and develop-less patterning applications such as magnetic memory structures, organic light-emitting diodes, optical sensor devices, hybrid-laser system, biosensor devices, and biomedical nanospectrometer devices. UV curing nanoimprint lithography offers the opportunity to relax the very complex mask patterns by avoiding much of the sub-resolution assist features required for ArF lithography at a comparable design rule. In addition, in order to solve the cost issues using mass fabrication methods nanoimprint lithography was investigated in nanoelectronic devices [1]. In advanced electronic device applications using nanoimprint lithography, a UV curing glucose-based resist material from biomass was studied for environmental applicability with 65 nm dense line patterning [2]. A UV sensitive hard mask underlayer material with terminal methacrylate groups has been developed, in order to improve the generated resist peeling and contamination problem, when the template was removed from the resist after UV irradiation [3]. The formulation of advanced resist materials design of fluorinated silicon-based resist materials in the step and flash nano imprint lithography for the next generation was reported [4]. The thermal nanoimprint lithography for Au electrodeposition was demonstrated [5]. The shrinkage behaviors and elimination time of bubbles for different cavity sizes and resist thicknesses were investigated [6]. The direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography was evaluated [7]. However, the UV curing nanoimprint lithography in the mass fabrication of the next generation device manufacturing, faces a challenge because of the various kinds of defects, particles, and contaminants positioned between the nanoimprint resist material and the template Examples of which are resist peeling, dislocations, voids, and impurities. The defect inspections which focused on two key defect types of random non-fill defects occurring during the nanoimprint resist filling process together with repeater defects caused by interactions with particles on the substrate, were summarized [8]. The new proposed nanoimprint resist material design and the nano imprinting processing conditions were investigated to decrease the resist based defect number on the template, when the template was removed from the resist material after pressing the template into the resistmaterial [9]. Figure 1 shows the classic optical images of a dirty-template causing the generated resist based defects on the template in the repeatability of nanoimprint process cycles.