# A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure
## 4 Conclusions  
This study presents a TaC: Cu/4H SiC heterostructure photodetector with remarkable performance for near-ultraviolet (NUV) light detection, extending its application into the visible spectrum. The device achieved high responsivity (1.66 A/W at 405 nm) and a rapid response time, demonstrating its suitability for high-temperature and extreme-environment applications. By leveraging the unique optoelectronic properties of TaC and Cu, combined with 4H SiC, this photodetector addresses the limitations of conventional SiC-based photodetectors. The results establish the potential for its scalable fabrication and practical deployment in fields such as environmental monitoring, flame detection, and optical sensing, marking a significant step forward in high-performance photodetection technology.  
Conceptualization, S.A. ([PERSON]) and H.H.; Methodology, S.A. ([PERSON]) and H.H.; Software, S.A. ([PERSON]); Validation, H.H.; Formal analysis, S.A. ([PERSON]); Investigation, S.A. ([PERSON]) and S.A. ([PERSON]); Resources, S.A. ([PERSON]); Writing--original draft, S.A. ([PERSON]); Writing--review & editing, K.A., A.A.O., A.A. and I.A.M.A.A.; Supervision, H.H. and A.E.M.; Project administration, H.H.; Funding acquisition, H.H. and A.E.M. All authors have read and agreed to the published version of the manuscript.  
This research was funded through the Australian Research Council Discovery Project grant (DP200101353).  
Not applicable.  
The data that support the findings of this study are available from the corresponding author upon reasonable request.  
The authors express their gratitude to the Australian National Fabrication Facilities (ANFF), ACT node.  
The authors declare no conflicts of interest.  
\begin{table}
\begin{tabular}{c c c c c c} \hline
**Structure** & **Wavelength** & **Responsivity** & **Dark Current** & **Response Time** & **Reference** \\  & **(nm)** & **(mA/W)** & **(mA)** & **(s)** & **Reference** \\ \hline
6H SiC/TaB & 405 & \(2.9\times 10^{3}\) & 500 at \(-1\) V & \(260.5\times 10^{-9}\) & [31] \\ \hline PANI ZnO film & 380 at \(-3\) V & 37.0 & \(0.8\times 10^{-10}\) & \(50\times 10^{-6}\) & [62] \\ \hline Ga\({}_{2}\)O\({}_{3}\)/GaN & 360 & \
\begin{tabular}{c} \(5\times 10^{2}\) at 2 V \\ 2.6 \(\times\)\(10^{6}\) at 16 V \\ \end{tabular} & - & 0.1 & [64] \\ \hline Pt/Ni at nanowire/ZnO film & 312 & 17.0 & - & 2.9 & [11] \\ \hline Au/ZnO & 325 & 0.485 & \(2\times 10^{-3}\) & \(12\times 10^{-3}\) & [63] \\ \hline B-doped 3C-SiC nanobelts & 405 &
\begin{tabular}{c} \(6.37\times 10^{8}\) \\ at 5 V \\ \end{tabular} & \(4.37\times 10^{-4}\) & \(50\times 10^{-3}\) & [19] \\ \hline Ag-4H-SiC nanohole-Ag & 375 & 824 & - & 1.022 & [65] \\ \hline
2D graphene/1D 4H-SiC & 365 &
\begin{tabular}{c} 9.27 at 0 V \\ 9.27 \(\times\)\(10^{3}\) at 5 V \\ \end{tabular} & \(4\times 10^{-9}\) & \(24.89\times 10^{-3}\) & [66] \\ \hline
4H-SiC/SiO\({}_{2}\)/Si (100) & 280 & 29 & \(1.6\times 10^{3}\) & - & [67] \\ \hline TaC: Cu/4H n-type SiC & 405 & \(1.66\times 10^{3}\) & \(1.1\) at \(-1.75\) V & \(260.2\times 10^{-6}\) & This work \\ \hline \end{tabular}
\end{table}
Table 1: Comparison of different photodetectors.