# Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications
## 4 Applications of Electrospinning in Memory: Storage Electronics
\begin{table}
\begin{tabular}{c c c c c c c} \hline \hline
**Year** & **Nanofiber Material** &
\begin{tabular}{c} **Mobility** \\ **(\(\upmu\), cm\({}^{2}\) V\({}^{-1}\) s\({}^{-1}\))** \\ \end{tabular} & **I\({}_{\text{on}}\)/I\({}_{\text{eff}}\)** & **Characteristics** & **Applications** & **References** \\ \hline
2020 & Al, Ga, Cr doped In\({}_{2}\)O\({}_{3}\) & 2.0 & 10\({}^{8}\) & Low operating voltage &
\begin{tabular}{c} Resistor loaded \\ inverter \\ \end{tabular} & [72] \\ \hline
2020 & Al functionalized \(\beta\)-Bi\({}_{2}\)O\({}_{3}\) & 64.4 & 10\({}^{6}\) & \
\begin{tabular}{c} Excellent sensitivity, stability \\ and reproducibility \\ \end{tabular} &
\begin{tabular}{c} Biosensor for \\ detection of \\ serotonin \\ \end{tabular} & [102] \\ \hline
2020 & IGZO & 5.32 & 4.35 \(\times\) 10\({}^{6}\) & \
\begin{tabular}{c} Good electrical properties and \\ reliability \\ \end{tabular} &
\begin{tabular}{c} Resistor-loaded \\ inverters \\ \end{tabular} & [79] \\ \hline
2021 & IGZO & 2.45 & 3.8 \(\times\) 10\({}^{2}\) &
\begin{tabular}{c} Double gate, high pH \\ sensitivities \\ \end{tabular} & Chemical sensors & [103] \\ \hline
2021 & In\({}_{2}\)O\({}_{3}\) & 1.51 & 1.5 \(\times\) 10\({}^{7}\) & Ar/O\({}_{2}\) plasma treatment & [104] \\ \hline
2021 & IAZO & 30 & 5.6 \(\times\) 10\({}^{6}\) & & [75] \\ \hline
2021 & In\({}_{2}\)O\({}_{3}\) & 27.7 & 10\({}^{7}\) & Great stability &
\begin{tabular}{c} Resistor-loaded \\ inverter \\ \end{tabular} & [105] \\ \hline
2021 & SnO\({}_{2}\) & 2.3 & 10\({}^{6}\) & Adjustable grain size & [77] \\ \hline
2021 & PVA (with evaporated & 8.77 \(\times\) 10\({}^{-3}\) & 1.37 \(\times\) 10\({}^{3}\) &
\begin{tabular}{c} Short response and recovery \\ time for detecting NO\({}_{2}\) \\ \end{tabular} & Gas monitoring & [106] \\ \hline \hline \end{tabular}
\end{table} 
Table 2: _Cont._quantum-hybridization mechanism in Figure 15g and the \"Write-read-erase-read\" sequence of the electrical response of the composites was probed to determine the memory applications [109]. The voltage scan range of \(-2\) V and \(+2\) V was applied to \"write\" the high-conducting state and then to \"erase\" it back to a low-conducting state, respectively. Figure 15h depicts the current value that corresponds to the applied voltage value based on whether the following \"write\" or \"erase\" operation is performed, demonstrating the simple memory behavior. Furthermore, novel conductive polymer aligned nanofibers made of electrospun polycaprolactone (PCL) with a complex made of multiwalled carbon nanotubes (MCNT) and fullerene C\({}_{60}\) (Figure 15i) displayed electrical switching behavior due to charge buildup of fullerene C\({}_{60}\) based on electrical stimulation [110]. These conveniently prepared nanocomposites on interdigitated coplanar electrodes could be applied to write-once-read-many memory devices (WORM), which is one type of non-volatile memory device. With further electrical and thermal cycling, the devices could be thermally reset, reprogrammed, and wiped. Figure 15j indicates that the devices could be cycled at least six times using sequential thermal and electrical stimuli, with the exact annealing temperature condition of 60 \({}^{\circ}\)C.  
Interest in one of the types of electronic memory devices, resistive memory devices, has increased markedly during the last few years. The most striking feature of this kind of device is the hysteresis loop in the current-voltage plane, which cannot be duplicated by other three-layer circuit elements, and the device resistance can be reversibly changed by an applied voltage while being maintained in its absence. It is well-known fact that the abrupt transition between two resistive switching states is caused by the formation and breaking of the conductive filament of the active layer. Initially, the device is in the high resistance state (HRS), with very little current flowing through it. The top electrode is biased while the bottom electrode is grounded during the electrical measurements.