); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (S.H. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (S.C.); [EMAIL_ADDRESS] (S.Z. ); [EMAIL_ADDRESS] (Q.Z.) 2  
Yulin
1 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; [EMAIL_ADDRESS] (Z.Y. ); [PERSON]DDRESS] (J.L. ); [EMAIL_ADDRESS] (Q.Z. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (S.H. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (S.C.); [EMAIL_ADDRESS] (S.Z. ); [EMAIL_ADDRESS] (Q.Z.) 2  
Yulin
1 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; [EMAIL_ADDRESS] (Z.Y. ); [PERSON]DDRESS] (J.L. ); [EMAIL_ADDRESS] (Q.Z. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (S.H. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (S.C.); [EMAIL_ADDRESS] (S.Z. ); [EMAIL_ADDRESS] (Q.Z.) 2  
Yulin  
1 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; [EMAIL_ADDRESS] (Z.Y. ); [PERSON]DDRESS] (J.L. ); [EMAIL_ADDRESS] (Q.Z. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (S.H. ); [EMAIL_ADDRESS] (Y.Z. ); [EMAIL_ADDRESS] (S.C.); [EMAIL_ADDRESS] (S.Z. ); [EMAIL_ADDRESS] (Q.Z.) 2  
Yulin
1 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; [EMAIL_ADDRESS] (Z.Y. ); [PERSON]DDRESS] (J.L. ); [EMAIL_ADDRESS] (Q.Z. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (S.H. ); [EMAIL_ADDRESS] (Y.Z. ); cs_121 obtain high-quality MoS\({}_{2}\) thin films, including physical vapor deposition (PVD) [12; 13; 14; 15], metal-organic chemical vapor deposition (MOCVD) [16; 17; 18], and chemical vapor deposition (CVD) [19; 20; 21]. Among these methods, CVD has shown great potential for large-scale MoS\({}_{2}\) film production due to its high efficiency, low cost, and ability to produce high-quality films. During the CVD growth of MoS\({}_{2}\) thin films, various process parameters--such as temperature, pressure, gas flow rate, substrate condition, and precursor type--collectively influence the transport, reaction, and nucleation/growth processes of the reactants [22; 23; 24; 25; 26; 27; 28]. By precisely controlling these parameters, the morphology, size, orientation, and phase structure of the thin films can be effectively tailored, enabling the fabrication of MoS\({}_{2}\) films with tunable properties to meet the demands of different applications. Currently, research on the growth mechanisms of MoS\({}_{2}\) films primarily focuses on the effects of substrate surface properties--such as surface symmetry, step edges, buffer layers, and surface defects--on nucleation and growth [29]. However, the understanding of the growth conditions that directly influence material nucleation and growth remains largely empirical, relying on trial-and-error approaches [19; 20; 21]. In particular, mass transport and reaction processes, which are directly linked to growth conditions, have not been investigated in depth. Therefore, a systematic study of the flow field, temperature field, mass transfer, and reaction processes during MoS\({}_{2}\) film growth is crucial for a deeper understanding of the growth mechanism and for achieving controlled fabrication of these thin films. In this study, we established a multiphysics coupling model involving the flow field, temperature field, mass transport, and chemical reactions, and thoroughly analyzed the effects of temperature and pressure on the growth of MoS\({}_{2}\) films. We found that the intermediate product MoS\({}_{2}\)O\({}_{5}\)S\({}_{4}\) is the key factor limiting the reaction rate, which not only cannot directly participate in the growth of MoS\({}_{2}\) film, but also hinders the diffusion of MoS\({}_{6}\), thus impeding film growth. Increasing the growth temperature can accelerate the diffusion rate of MoS\({}_{6}\) and weaken the influence of Mo\({}_{3}\)O\({}_{9}\)S\({}_{4}\), enabling the layered growth of MoS\({}_{2}\) thin films.