# Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications
## 7 Conclusions and Future Insights  
The electrospinning technique has experienced the process of rapid development, gaining widespread usage as a simple and convenient method to quickly produce fibrous nanomaterials from a broad spectrum of materials, and its fiber-based applications have extended to every corner of the electronic products, whether the devices are two-terminals, such as sensors and RRAM, or three-terminal ones, such as field-effect transistors. Combining the capability of logic computation for FETs, sensing for sensors, and storage for memories, an innovative system consisting of devices prepared only by electrospinning can act as a practical computer in which all these function modules are fabricated separately by a different process. In addition, electrospun, nanofiber-based, neuromorphic electronic devices inspired by the human brain with ultra-low power consumption provide new chances for the superior design for hardware integrated circuits, which will reform the current information processing technology. Moreover, integrated systems, including  
Figure 22: Electrospun nanofibers for optoelectronic applications. (**a-d**): A UV photodetector based on Crossed ZnO nanofiber array homojunction and its characteristics: (**a**) Image of the electrospun fiber collector with three conductive electrodes. (**b**) Optical image of the p-type and n-type ZnO nanofibers in cross array arrangement with two Ag-gel electrodes. (**c**) I–V curves of the crossed fiber array homojunction under a dark environment and UV illumination (360 nm, 2.5 mW cm\({}^{-2}\)). (**d**) Photoresponse spectrum of the p-n junction at zero voltage bias. Reprinted with permission from Reference [131]. Copyright 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (**e**,**f**): SnO\({}_{2}\)/NiO nanofiber array-based photodetector and electrical measurements: (**e**) Photo of SnO\({}_{2}\)/NiO p-n junction arrays for photodetection. (**f**) Responsivity and detectivity of SnO\({}_{2}\)/NiO junction under \(-5\) V bias. Reprinted with permission from Reference [132]. Copyright 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (**g**–i**): A uniform Sn-based (Sn@CFC) electrode in the SIBs: (**g**) Schematic representation of the synthesis process of the free-standing Sn@CFC electrode. (**h**) Galvanostatic discharge/charge profiles at the first cycle. (**i**) Long-term cycling performance of the fabricated electrode at 200 mA g\({}^{-1}\). Reprinted with permission from Reference [133]. Copyright 2021 Elsevier B.V.  
as-developed soft electronics, such as flexible sensors, energy supply, memory devices, and optoelectronics, have huge potential for revolutionary electronic skin products and this kind of assembly will offer tremendous opportunities for both future research and commercial products. In this review, we collectively presented the development of the electrospinning technique, various approaches for preparing nanofibers with different properties, and their representative electronic applications. First, the introduction of the electrospinning technique and three different types of ways, including pretreatment of the solution, usage of the coaxial spinneret, and near-field electrospinning, that were taken to fabricate all types of nanofiber structures, such as aligned arrays, hollow tubes, core-sheath, porous structure, and multichannel tubes, were put forward. Afterward, three main categories of factors that had a powerful influence on the electrospun nanofibers, composed of inner properties of solutions, conditions of the electrospinning process, and surrounding environmental factors, were discussed in detail. Based on the advanced technology of the electrospinning process, various electronic applications involving most of the two and three-terminal devices were explored, e.g., field-effect transistors with electrospun fiber-based channel layer, memristor featured by 1D active layer, and stretchable and flexible sensors, as the most valuable applications for electrospun nanofibers.