## 4 Conclusions and Future Works  
In this paper, a high-quality CMOS grounded active inductor has been presented. It was optimized in 130 nm CMOS technology. By incorporating a feedback resistor into a cascode grounded configuration, the proposed design achieves significant improvements in both inductance and quality factor. Experimental validation has demonstrated a maximum quality factor of 1586 and an inductance tuning range of 6.7 nH to 84.4 nH, with a low power consumption of only 2 mW.  
The inductive bandwidth of the design is tunable across a frequency range of 87 MHz to 3.96 GHz, offering high versatility for diverse receiver applications. It is compatible with multiple mobile communication bands, including 4G and 5G NR (FR1) bands (n1, n3, n5, n7, n8, n20, n28, n38, n41, and n78), as well as the 2.4-2.5 GHz ISM band, enabling its integration into wireless system designs.  
Our future work will be focused on further optimizing the design to extend its frequency tuning range and enhance its integration with advanced circuit architectures, aiming to improve overall performance and adaptability.  
Conceptualization, S.S. and A.B.H.; methodology, A.B.H.; software, A.B.H.; validation, S.S., A.B.H. and F.H.; formal analysis, A.B.H.; investigation, S.S.; resources, A.B.H.; data curation, S.S.; writing--original draft preparation, S.S. and A.B.H.; writing--review and editing, S.S. and F.H.; visualization, S.S. and A.B.H.; supervision, F.H. All authors have read and agreed to the published version of the manuscript.  
This research received no external funding.  
Not applicable.  
Data Availability Statement: Data are contained within the article.  
The authors would like to think [PERSON] for their extraordinary support in this research project and for providing the essential resources that facilitated the preparation of this manuscript.  
Author [PERSON] was employed by the company Dynamics RF/mmW Consulting and Design. The remaining authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.  
\begin{table}
\begin{tabular}{c c c c c c c c c c} \hline \hline \multirow{2}{*}{**Ref.**} & \multirow{2}{*}{**Topology**} & \multirow{2}{*}{**Verification**} & \multirow{2}{*}{**Leq (nH)**} & \multirow{2}{*}{**Qmax**} & **SRF** & \multirow{2}{*}{**PDC**} & \multirow{2}{*}{**Area (\(\mu\)m\({}^{2}\))**} & **CMOS** & \multirow{2}{*}{**VDD**} \\  & & & & **(GHz)** & & **(mW)** & & **(nm)** & **(V)** \\ \hline
[25] & Gyrator-C & Meas. & 5.7 & 70 & 2.5 & 8 & 88 \(\times\) 90 \({}^{+}\) & 180 & 2.0 \\
[28] & Gyrator-C & Sim. & 191.7 & 286 & 4.81 & - & - & 65 & 1.2 \\
[36] & Gyrator-C & Meas. & 27 & 28 & 1.5 & 4 & 0.1 \(\times\) 0.1 mm\({}^{2}\)\({}^{*}\) & 180 & 1.8 \\
[37] & Gyrator-C & Meas. & 0.65–1 & 45 & \(>\)8 & 21 & 390 \(\times\) 290 \({}^{+}\) & 130 & 1.5 \\
[38] & Gyrator-C & Meas. & 0.8–3.5 & 70 & 3.5 & 16 & 8800 \({}^{+}\) & 180 & 3.3 \\
[39] & Gyrator-C & Meas. & 2.5–5 & 740 & \(>\)6 & - & - & 180 & 1.6 \\
[40] & Gyrator-C & Sim. & 3.55–26 & 895 & 5.5 & 0.5 & 22 \(\times\) 27.5 \({}^{+}\) & 90 & 1.0 \\
[41] & Gyrator-C & Meas. & 22 & 450 & 10 & 3.6 & 0.2 \(\times\) 0.3 \({}^{+}\) & 65 & 1.2 \\ This work & Gyrator-C & Meas. & 6.7–84.4 & 1586 & 3.96 & 2 & 12.2 \(\times\) 25.3 \({}^{+}\) & 130 & 1.0 \\ \hline \hline \end{tabular}  
\({}^{*}\) Without bond pads. \({}^{*}\) With bond pads.  
\end{table}
Table 2: Performance comparison summary of state-of-the-art active inductor implementations.