## 1 Introduction
The head group and a tail group can be tailor-designed for specific applications, which makes SAM materials an excellent ecosystem for micro/nano surface property modification. During the chemical reaction between the tail group and the solid surface underneath, the monolayer will spontaneously pack into a highly ordered film due to the van der Waals forces between the carbon chain skeleton of the SAM precursor. Similarly to the head groups, the tail group also can be selected among various chemical groups catering to the specific solid surface underneath, including a thiol group (-SH) on a gold surface [22; 23] or trichlorosilanes (-SiCl\({}_{3}\)) and trimethoxysilanes (-Si (OCH\({}_{3}\))\({}_{3}\)) on an oxide surface [24]. In particular, trichlorosilanes are intensively investigated in semiconductor-related applications to modify a dielectric layer's surface properties, including those of silicon oxide, aluminum oxide, and ITO [25; 26; 24]. There are two categories of techniques to fabricate SAM films; liquid-based methods are one, and vapor-based methods are the other. For liquid-based methods, high-quality SAM films from trichlorosilane precursors are laborious to make because the amount of water in the SAM precursor solution needs to be meticulously controlled [19; 20]. Absent or low amounts of water in the SAM precursor solution will result in incomplete SAM film formation. On the contrary, too much water will lead to facile polymerization of the SAM precursor in solution and unwanted polysiloxane deposition on the solid surface underneath. Typically, there are many defects in the SAM films obtained from the liquid-based methods [21; 22]. Therefore, several vapor-based methods have been developedto make SAM films in an ambient environment or in a vacuum chamber [23; 24; 25]. For instance, the hexa-methyl-disilazane (HMDS) layer obtained in a vacuum chamber--a regular process in a high-end semiconductor facility--has the smallest number of surface defects. For the vapor-based deposition method, the liquid formed SAM precursor and catalyst will be vaporized due to the low vacuum condition and be transferred to a vacuum chamber at a specific temperature. The amount of HMDS precursor vapor will be precisely controlled by a flow meter. With no contaminants from the ambient environment and precise reaction process control, a high-quality HMDS SAM film can be obtained with fewer physical defects and higher uniformity. To be qualified as a calibration sample for the AES and XPS techniques, highly uniform SAM-based micro/nanostructures with fewer physical defects must be fabricated. In this paper, precise SAM patterns in micrometer scale were fabricated by several conventional semiconductor fabrication techniques combined, including photolithography, SAM vapor deposition, and a lift-off technique using trichlorosilane (1H,1H,2H,2H-perfluorodecyltrichlorosilane, FDTS). The FDTS SAM film patterns were characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), both of which have mapping analysis capabilities. AES is a highly surface-sensitive analytical technique involving the bombardment of the FDTS SAM film pattern surface with low-energy incident electrons from 50 eV to 3.0 keV [17]. The related elements of KLL Auger electrons on the FDTS SAM film pattern surface are then collected and analyzed to evaluate FDTS SAM film pattern quality based on these elements, especially the element fluorine. Meanwhile, X-ray photoelectron spectroscopy (XPS) is also conducted to characterize the FDTS SAM film patterns with a mapping analysis capability. For XPS analysis, lower-energy incident X-rays of about 1 keV bombard the FDTS SAM film pattern surface, and the induced low-energy photoelectrons are ejected from the core shells of the atoms within the FDTS SAM film patterns. Those electrons are then collected and dispersed in an analyzer.