for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L.) [PERSON]  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L.) [PERSON]  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L.) Zhihan Cheng  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L.) Zhihan Cheng  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L. ); [EMAIL_ADDRESS] (K.L.) [PERSON]  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L. );  
[PERSON]  
1 State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China; [EMAIL_ADDRESS] (W.D. ); [EMAIL_ADDRESS] (X.C. ); [EMAIL_ADDRESS] (Z.Z. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (Z.C. ); [EMAIL_ADDRESS] (W.X. ); [EMAIL_ADDRESS] (Y.L. ); [EMAIL_ADDRESS] (K.L. )NIR photodetectors have high costs of preparation and require harsh operating environments. These factors limit their application. Therefore, there is an urgent need for alternative materials that possess high absorption in the NIR region in ambient conditions and can be prepared through cost-saving approaches [5; 6; 7]. MoTe\({}_{2}\), a newly explored TMDC, with bandgap energy of about 1.0 eV in its bulk form, meets the above requirements for NIR photodetectors [3; 4; 8]. To date, there have been several studies reported about NIR photodetectors based on MoTe\({}_{2}\)/graphene heterostructures [1; 2; 3; 8; 9; 10]. The highest responsivity and shortest response time were 970.82 A/W [3] and 6.15 \(\upmu\)s [2], respectively, under 1064 nm illumination. Nevertheless, few of these studies achieve high responsivity and fast response speed simultaneously [2; 8]. Moreover, the MoTe\({}_{2}\) flakes prepared by mechanical exfoliation were used in all these studies, which hampers their large-scale application. In this study, we fabricate graphene-MoTe\({}_{2}\)-graphene vertical van der Waals (vdWs) heterostructure devices. Both the graphene and few-layer MoTe\({}_{2}\) were grown via the chemical vapor deposition (CVD) method. The devices were constructed using the wet transfer method together with the dry etching technique.