## 3 Results  
### FTIR-Solid \({}^{13}\)C-Nmr  
#### FTIR  
In Figure 2, the FTIR of the blank sample as long as the modified ones can be seen. In this way, the anchoring of the silane can be monitored. FTIR results verify that after modification, new peaks of specific groups are generated. Initially, rGO FTIR displays specific groups derived from the non-full reduction of GO. Specific groups of GO can be seen [26] before a reduction in specific areas (Figure 2a): 3500 cm\({}^{-1}\) (OH stretching), 1720 cm\({}^{-1}\) (C=O, stretching), 1587 or 1615 cm\({}^{-1}\) (C-OH or bending of water adsorbed), 1356 cm\({}^{-1}\) (C-OH), 1288-1225 cm\({}^{-1}\) (C-O-C bending), and 1056-1066 cm\({}^{-1}\) (C-O). Moreover, some other bands can be found at 3060 cm\({}^{-1}\) (C-H), 2927/2868 cm\({}^{-1}\) (H-H of OH in dimeric COOH and intra-molecular bonded OH or asymmetric-symmetric CH\({}_{2}\) stretching), 1640-1605 cm\({}^{-1}\) (C=C, unoxidized graphite, or recovery of sp2 lattice), 1433 cm\({}^{-1}\) (C-H), and 600 cm\({}^{-1}\) (OH). Specific groups of GO, shown in FTIR, reveal that the reduction step did not eliminate all groups. What is also important is the Figure S1 of the same monolith, but with four times more AsA (sample rGO60_0.5 vs. rGO6_2), where these groups have less intensity or are even disappeared. Moving to the modified monoliths, new bands appeared related to the specific chemical groups. First, the common ones are displayed for all modified samples: 2930/2860 cm\({}^{-1}\) (-CH\({}_{2}\)-), 1456 cm\({}^{-1}\) (-CH\({}_{3}\)), 1241/1084/1003/799 cm\({}^{-1}\) (-Si-O), 1110 cm\({}^{-1}\) (-Si-O-Si-), and 1020/690 cm\({}^{-1}\) (Si-O-C) (Figure 2b-d, marked with brown color) [27; 28; 29; 30; 31; 32]. Among those bands, probably the most important one is the -Si-O-Si-, which shows that CH\({}_{3}\) groups have been eliminated during the reaction with the GO and that the modifying component has made bridges with neighboring compounds. Regarding the TMOS, the new expected band is at 3090 and 2570 (S-H) (Figure 2b, marked with green color) [27; 30; 31]. In the case of TMON, more bands can be seen, such as 3338 cm\({}^{-1}\) (C-NH-C), 1742 or 1621 cm\({}^{-1}\) (C=O), 1599 cm\({}^{-1}\) (NH\({}_{2}\)), 1588 cm\({}^{-1}\) (C(O)-NH), and 1571 cm\({}^{-1}\) (N-H) (Figure 2c, marked with blue color) [31; 32; 33]. Finally, for the case of TMOSN, the most important expected bands are 2327 cm\({}^{-1}\) (-CN), 1060 or 1255 cm\({}^{-1}\) (C=S), and 840-870 cm\({}^{-1}\) (C-S) (Figure 2d, marked with purple color) [34; 35; 36; 37]. Based on the FTIR expected bands, many of them have been recognized in spectra shown in Figure 2.  
Figure 2: FTIR results for blank: (**a**) reduced graphene oxide monolith rGO60_0.5; (**b**) S60_0.5; (**c**) N90, 2; (**d**) SN60, 2. The FTIR spectra can also offer the possibility of making calculations for the extend of anchoring these silanes. The ratios were calculated from bands of the silane (-C-Si-O- and -CH\({}_{2}\)-) divided with specific bands from the rGO (C=C and C=O). The higher the ratio, the higher the extent of modification. From the ratios calculated, the highest degree of modification was for the sample modified with TMOS, S90_2 (3.79), then for the system with TMON, N60_05 (1.87), and TMOSN, SN90_05 (2.36). In general, TMOSN seems to be a component that was better anchored to the rGO after the monolith formation since three out of four samples are in the highest five values. Similarly, TMOS has two in the highest values. The medium value for monoliths with TMON is the lowest with 1.13, and then comes TMOSN with a medium of 1.85, and the highest medium is for TMOS with 2.17. In terms of the parameters in preparation of the monoliths, the values go with 90_2 > 90_05 > 60_05 > 60_2 (2.25, 1.77, 1.51, and 1.35). It seems that the preparation of monolith at 90 \({}^{\circ}\)C and with the analogy of 2 for AsA showed the highest modifications.