## 3 Results  
To check the uniformity of ZnO nanostructures on the surface of bare as well as textured Si wafers, top and cross-sectional views of the FESEM analysis were observed. The top surface view of ZnO NRs on bare and textured Si wafers presents uniform and well-distributed nanorods over the Si surface, as shown in Figure 2a-h. At the deposition time of 5 h, the highly dense hexagonal faces of the ZnO NRs have grown over the bare Si wafer (Figure 2c). The ZnO NRs were multidirectional on the textured surface, but all NRs were arranged in a vertical manner, as displayed in Figure 2e-h). The top view of the ZnO NRs grown at 5 h reveals that the NRs are well grown in many directions, as they are clearly visible in the cross-sectional view. Figure 3a shows the highly dense NRs over one pyramid of a Si wafer. The cross-sectional view of ZnO NRs grown at 5 h is a well-distributed and multidirectional arrangement of NRs, as shown in Figure 3b. \begin{table}
\begin{tabular}{c c} \hline \hline
**Parameters** & **Values** \\ \hline Device area & 16 cm\({}^{2}\) \\ Front surface texture depth & 0–5 \(\upmu\)m \\ Front reflectance & 2–4\% \\ Thickness of Si solar cell & 120 \(\upmu\)m \\ Dielectric constant & 11.9 \\ Energy band gap & 1.124 eV \\ Background doping P-type & \(1.513\times 10^{16}\) cm\({}^{-3}\) \\ First front diffusion N-type & \(2.87\times 10^{20}\) cm\({}^{-3}\) \\ Refractive index & 3.58 \\ Excitation mode & Transient \\ Temperature & 25 \({}^{\circ}\)C \\ Other parameters & Internal model of PC1D \\ Primary light source & AM 1.5D spectrum \\ Bulk recombination & 10 \(\upmu\)s \\ Constant intensity & 0.1 W/cm\({}^{2}\) \\ \hline \hline \end{tabular}
\end{table} 
Table 1: Primary parameters used in the PC1D simulation. The growth of ZnO NRs on the surface of the textured Si wafer were analyzed to examine the crystalline phases by XRD measurements. XRD patterns of all ZnO NRs AR layers exhibit all the characteristics of the diffraction peaks of ZnO, along with a strong Si phase, which are located at 34.38\({}^{\circ}\) (002) and 69.26\({}^{\circ}\) (001), respectively, as shown in Figure 4. The observed diffraction peaks confirm the perfect crystal of ZnO, having the hexagonal wurtzite phases of ZnO materials [35] along with the monocrystalline crystalline phase of Si. This examination clearly deduces the growth of single  
Figure 3: FESEM image of (**a**) top and (**b**) cross-sectional view of ZnO NRs for 5 h.  
Figure 2: Field emission scanning electron microscopy (FESEM) image of the top view of ZnO NRs of treatment times (**a**) 3 h, (**b**) 4 h, (**c**) 5 h, and (**d**) 6 h on bare Si substrate and (**e**) 3 h, (**f**) 4 h, (**g**) 5 h, and (**h**) 6 h on textured Si substrate. crystalline ZnO NRs on a Si surface via the low-temperature solution method, followed by annealing at 250 \({}^{\circ}\)C for 1 h.  
Photoluminescence (PL) spectroscopy in Figure 5a revealed emission peaks at 393 nm for ZnO NRs at 3 h, 4 h, and 5 h, respectively. The small emission peak at 469 nm belongs to the Si wafer. The PL intensity increased as the reaction time increased, due to an increase in length of the ZnO NRs on the Si substrate. The existence of a prominent PL emission near 400 nm confirms the formation of ZnO on the Si wafer [36]. Moreover, the structural behavior of grown ZnO NRs is further elucidated by the Raman spectroscopy (Figure 5b), which exhibits a sharp Raman band at 437 cm\({}^{-1}\) with a Si peak. The Raman band at 437 cm\({}^{-1}\) corresponds to the typical E\({}_{2}\) mode, which normally originates from the hexagonal wurtzite phase of ZnO, deducing the creation of ZnO NRs on the Si surface. No other Raman bands were detected, confirming the high purity ZnO crystal without any surface defects. Figure 4: XRD Analysis of ZnO NRs on the surface of Si at (**a**) 3 h, (**b**) 4 h, and (**c**) 5 h treatment time. Figure 5: (**a**) Photoluminescence and (**b**) Raman spectrum, with an inset image of ZnO NRs on a Si wafer for 5 h of treatment time.