# Mdpj
## 3 Results  
To verify the effectiveness of the buried oxide, we first compared the PGE of the existing structure with the new structure. In the existing structure, the \(V_{\text{t,off}}\) value was 1.269 V, and the \(V_{\text{t,on}}\) value was 0.837 V, resulting in a final PGE of 0.433 [\(\Delta\)V]. In the structure with the added buried oxide, the \(V_{\text{t,off}}\) value was 1.173 V, and the \(V_{\text{t,on}}\) value was 0.762 V, yielding a PGE of 0.411 [\(\Delta\)V]. This indicates a reduction in the PGE of approximately 5.04% due to the addition of the oxide. Table 3 shows the differences in PGE and \(V_{\text{th}}\) with and without buried oxide, and Figure 5 shows the PGE difference with and without the buried oxide. \begin{table}
\begin{tabular}{c c c} \hline
**Parameter** & **Initial Value** & **Step** \\ \hline Material & SiO\({}_{2}\) & N/A \\ \hline Distance from oxide to AWL (\(D_{\text{bo}}\)) & 18 nm & \(-4\) nm \\ \hline Thickness of oxide (\(T_{\text{bo}}\)) & 30 nm & \(+4\) nm \\ \hline Width of oxide (\(W_{\text{bo}}\)) & 28 nm & \(+4\) nm \\ \hline \end{tabular}
\end{table} 
Table 2: Conditions and steps of buried oxide. Figure 4: Modifications of each parameter of the buried oxide. (**a**) Adjustment of \(D_{\text{bo}}\); (**b**) adjustment of \(W_{\text{bo}}\); (**c**) adjustment of \(T_{\text{bo}}\). \begin{table}
\begin{tabular}{c c c c} \hline
**Structure** & \(V_{\text{t,off}}\)**[V]** & \(V_{\text{t,on}}\)**[V]** & **PGE [\(\Delta\)V]** \\ \hline Without buried oxide & 1.269 & 0.837 & 0.433 \\ \hline With buried oxide (initial value) & 1.173 & 0.762 & 0.411 \\ \hline \end{tabular}
\end{table} 
Table 3: Difference in PGE and threshold voltage with and without buried oxide. When voltage is applied to the FPWL, it enters the on state, forming an electric field that lowers the energy band of the AWL, thereby reducing the threshold voltage. The addition of buried oxide restricts the channel area formed in the AWL, thereby strengthening gate control. This effect contributes to the reduction in threshold voltage, which is a key mechanism for mitigating the PGE. As previously mentioned, we attempted to carry out modifications to find the optimized form of the oxide. Adjusting \(D_{\text{bo}}\), \(W_{\text{bo}}\), and \(T_{\text{bo}}\) all led to a reduction in the PGE. Among these, adjusting \(D_{\text{bo}}\) resulted in the highest reduction rate per step, followed by increasing \(T_{\text{bo}}\) and \(W_{\text{bo}}\). For \(D_{\text{bo}}\), starting from the initial buried oxide value of 18 nm with a PGE value of 0.411 [\(\Delta\)V] and reducing the distance to 6 nm resulted in a decrease to 0.390 [\(\Delta\)V]; this represents a 5.11% reduction in the PGE. Similarly, the reduction rates observed when modifying \(T_{\text{bo}}\) and \(W_{\text{bo}}\) were 4.14% and 3.65%, respectively. In all cases, the reduction trend was nearly linear, highlighting the importance of positioning the oxide layer at an optimal size and location to achieve significant PGE reduction while maintaining manageable fabrication complexity. Table 4 shows the \(V_{\text{t,off}}\), \(V_{\text{t,on}}\), and PGE values when adjusting the parameters of the buried oxide, while Figure 6 presents a graph illustrating the trend of PGE values based on the changes in the buried oxide parameters. Figure 5: PGE difference with and without the buried oxide. Figure 6: PGE results of buried oxide for each modification. (**a**) Reducing \(D_{\text{bo}}\); (**b**) increasing \(T_{\text{bo}}\); (**c**) increasing \(W_{\text{bo}}\). Various modifications to the buried oxide further increase this gate control, although further research is needed to fully understand the underlying causes. If the exact cause of PGE reduction is identified, a more optimized form of the buried oxide can be developed. As expected, the results from adding interface traps showed an increase in the PGE. When the trap density ranged from \(10^{10}\) to \(10^{11}\) [cm\({}^{-2}\)], the PGE value showed a slight increase from 0.4112 to 0.4118 [AV].