## 1 Introduction  
In the complex radiation environment of space, high-energy particles produce a variety of environmental effects on spacecraft, resulting in spacecraft anomalies, of which the Space Electrostatic Discharge effect (SESD) and Single Event Effect (SEE) account for a large proportion [1, 2, 3]. NASA, Marshall Flight Center (MSFC), and AEROSPACE have investigated 114, 299, and 476 spacecraft anomalies [2, 3, 4] induced by the space environment in 1996, 1999, and 2009, separately. According to the results, the percentage of anomalies caused by SESD and SEE were 33% and 38.7%, 54.2% and 28.4%, and 25% and 46%, respectively. The demand for highly integrated, high performance, low power, small size and low mass circuit devices on space exploration satellites and vehicles is growing rapidly. At the same time, they must also possess a very high level of radiation resistance in order to guarantee safety in flight. SRAM is the core element of the spacecraft and is responsible for data processing and storage. Potential SESD and SEE may cause it to malfunction in a variety of ways, even affecting the normal operation of the entire system. Although researchers have studied the performance and physical mechanisms of SESD and SEE widely, their effects on spacecraft are often confused with each other. Several factors contribute to this difficulty. First of all, the spacecraft anomaly problem is very complex, involving a wide range of engineering and technical aspects. As well, anomalies occurring in space are more difficult to reproduce and study in depth through experiments on the ground. Secondly, traditional SEE research is primarily concerned with the effects of the space radiation environment on spacecraft circuits and devices, whereas traditional SESD research is primarily concerned with the effects of space plasma and high-energy electron storms on spacecraft materials and structures. This has resulted in the formation of two independent international research groups. Nuclear and Space Radiation Effects Conference (NSREC) and Radiation Effects on Devices and Systems Conference(RADECS) communicate the former, while the latter is primarily communicated through the Spacecraft Charging Technology Conference (SCTC), with very little joint research taking place between the two groups. Additionally, research on the effects of SESD on devices and circuits is quite limited, in comparison to the well-documented effects of SEE, which limits a comparative study of characteristics, patterns, and mechanisms. Over the past several years, the National Space Science Center has conducted preliminary experiments on errors and anomalies associated with these two effects in digital circuits, such as operational amplifiers (OPA), static random-access memories (SRAM), and field programmable gate arrays (FPGA). It was discovered that both SEE and SESD can lead to abnormal transient pulse signals, while the upset of the memory bit 0/1 state of commercial SRAM devices was examined. However, the characteristics of memory devices with radiation hardening for astronautics have not been studied. From an interdisciplinary perspective, this study investigated the errors generated by SESD and SEE on a SRAM device with EDAC (Error Detection And Correction) redundancy design for spacecraft. First, an experiment was conducted to determine the relationship between soft error number and pulsed laser energy and electrostatic discharge voltage. According to the results, the number of errors is positively correlated with the energy of the external excitation source. Furthermore, in order to gain a more comprehensive understanding of the intrinsic mechanisms of errors caused by SESD and SEE, a statistical analysis of the types of errors induced by each was conducted. It was evident that SEE leads to single-bit upsets (SBU) predominantly, while SESD results in mostly multi-bit upsets (MBU). In addition, we investigated for the first time the relationship between the soft errors induced by these two effects and the supply current.