Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications  
[PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [PERSON]S] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
2 Advanced Center of Electrical and Electronic Engineering, Universidad Tecnica Federico Santa Maria, Valparaiso 2390103, Chile; [EMAIL_ADDRESS]  
[PERSON]  
4 Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany; [EMAIL_ADDRESS] (M.R. ); [PERSON]S] (A.M.); [PERSON]SS] (C.R. ); [PERSON] (M.S.) [PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
4 Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany; [EMAIL_ADDRESS] (C.R. ); [EMAIL_ADDRESS] (C.R. ); [EMAIL_ADDRESS] (C.M. );  
[PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
1 Department of Electronics, Universidad Tecnica Federico Santa Maria, Valparaiso 2390123, Chile; [EMAIL_ADDRESS] (A.M.); [EMAIL_ADDRESS] (F.T. ); [EMAIL_ADDRESS] (J.M.) [PERSON]  
2 Advanced Center of Electrical and Electronic Engineering, Universidad Tecnica Federico Santa Maria, Valparaiso 2390103, Chile; [EMAIL_ADDRESS]  
[PERSON]  
3 Engineering Department, Universidad Catolica del Uruguay, Montevideo 11600, Uruguay; [EMAIL_ADDRESS] (J.M. ); mioascalIn recent years, with advancements in various industries such as aerospace, automotive, and power generation, there is a growing demand for more efficient converters capable of handling higher power densities [3; 4]. At the same time, an increasing number of applications require devices that occupy less volume or can withstand hostile environments [5; 6; 7; 8]. This dual need for compactness and durability is driving the development of innovative technologies that can meet these stringent requirements while maintaining optimal performance and reliability. High-temperature and extreme environment applications are critical in various fields, including aerospace, industrial motor control systems, automotive, deep-well drilling, and nuclear energy. In space applications, power systems must withstand high radiation exposure, extreme thermal conditions, and reduced atmospheric pressure, which can significantly affect the reliability and performance of electronic components [9; 10]. In power electronics, Si-based semiconductor devices exhibit significant deterioration in thermal performance when operating at reduced atmospheric pressure. This degradation arises from a reduction in the efficiency of convective heat transfer from the device surface and its heat sink, which under normal pressure conditions is the primary mechanism for dissipating heat from the heat sink [11]. For instance, motor drivers in space missions have been designed to operate at ambient temperatures up to 125 \({}^{\circ}\)C [12].