## 4 Conclusions  
This study describes in-situ, low temperature, photo-assisted dissociation of CS\({}_{2}\) on a Si substrate with a VUV (172 nm) microplasma lamp with a flat form factor. Xe\({}_{2}\) excimer VUV sources deliver sufficient photon energy of 7.2 eV to the organic reactant to dissociate its C=S bonding at a higher reaction rate within a few minutes. The analysis  
Figure 6: XPS spectra of the C 1s and S 2p chemical states in the CS\({}_{2}\) VUV assisted dissociation film with air (**a,b**) and nitrogen (**c,d**) environment at 300 K on Si substrate.  
of the deposited product indicates the possibility of the formation of either a C-C or C-S based polymeric deposit on the substrate. Especially, the investigation of the thin layers by Raman spectroscopy and X-ray photoelectron scpectroscopy indicates that the resulting carbon bond was initiated from the CS\({}_{2}\) dissocaiton, and it coincides with other reaction mechanisms of the conventional plasma enhanced or photochemical vapor deposition. We have also found that chemical bond and composition could be changed depending on the efficiency of VUV photon delivery, mainly dependent on the controlled environment. It has been known that the material backbones are closely related to the electrical properties of either semiconductors or conductors, depending on its thin-film structure. Amorphous deposits were also identified in the characterization, and selective formation of the different products was also observed in different environmental parameters associated with VUV absorption. It has the potential to be an efficient technique for in-situ deposition thanks to its simple controllability of deposition parameters and scalable deposition area. Furthermore, the use of other VUV wavelengths from the microplasma lamps (especially for having its photo-energy higher than 7.2 eV) in the microplasma lamp will open a novel photochemical tool for the conversion of various organic/inorganic precursors. At present, the 7.2 eV photons efficiently dissociate (initiate the photochemistry) precursor materials containing any chemical double bond structures according to the preliminary studies for the various materials. It is expected that higher photon energies (>8.7 eV) would achieve the photodissociation of, for example, carbon triple bonds in the controlled environment. The VUV-assisted dissociation mechanism at 300 K appears to be very attractive for industrial applications in electronic and optical device manufacturing. It is also applicable for environmental applications such as the remediation of harmful organic compounds in the air [15,34].  
Conceptualization, J.K. and S.-J.P.; methodology, J.K. and S.-J.P.; validation, J.K. and S.-J.P.; investigation, J.K. and S.-J.P.; data curation, J.K. and S.-J.P.; writing--original draft preparation, J.K; writing--review and editing, S.-J.P.; supervision, S.-J.P.; project administration, S.-J.P.; funding acquisition, S.-J.P. All authors have read and agreed to the published version of the manuscript.  
This research was funded by the Ministry of Environment, Republic of Korea (MOE).  
Not applicable.  
This research was supported by R&D Center for Green Patrol Technologies through the R&D for Global Top Environmental Technologies funded by the Ministry of Environment, Republic of Korea (MOE).  
The authors declare no conflict of interest.