## 4 Results
Further optimization and thermal management strategies could potentially allow for higher injection currents, but this requires careful consideration and is beyond the scope of the current study. To get further insight into the performance of the 4-bit parity processor, the QF against the operating data rate for even and odd generations using CR-SOAs-MZIs is depicted in Figure 8. CR-SOA is expected to operate at higher speeds while maintaining acceptable performance. The considered optical gates achieve an acceptable QF at high rates, thanks to the rapid transitions enabled by the CR layer. For example, the even parity generation (Pe) has a QF = 8 at a rate of 220 Gb/s and the odd parity generation (Po) has a QF = 7.35 at 160 Gb/s. Figure 6: QF against transition time from CR to AR (\(\tau_{\text{t}}\)) for even (Pe) and odd (Po) generations using CR-SOAs-MZIs at 120 Gb/s. The functionality of the parity processor is heavily influenced by the characteristics of the incident continuous wave (CW) signal. Consequently, we examined how variations in CW beam power (\(P_{\mathrm{CW}}\)) impact the output QF of both even and odd parity generations using CR-SOA-based MZIs operating at a speed of 120 Gb/s, as shown in Figure 9. Our analysis revealed that the CW power must not exceed a specific threshold. Below this threshold, the QF maintains a consistently high level and shows little sensitivity to power fluctuations. However, beyond this threshold, denoted by a knee in the curve, the QF experiences a steep decline. This decline occurs because the CW power reaches a level where it no longer functions as a probe; instead, it begins to dominate the gain dynamics of CR-SOAs-MZI3. As a result, it masks the pump-like role of the CR-SOAs-MZI3 output as it enters CR-SOAs-MZI4 (refer to Figure 3). Figure 8: QF against data rate for even (Pe) and odd (Po) parity generations using CR-SOAs-MZIs at 120 Gb/s. Figure 7: QF against injection bias current (I) for even (Pe) and odd (Po) parity generations using CR-SOAs-MZIs at 120 Gb/s. In the context of the all-optical 4-bit parity generator and checker, understanding the impact of amplified spontaneous emission (ASE) noise inherent in CR-SOAs on the system's QF is paramount. ASE power calculation, as expressed by \(\mathrm{P}_{\mathrm{ASE}}=\mathrm{N}_{\mathrm{SP}}\) (\(\mathrm{G}_{0}-1\)) \(2\pi\hbar\mathrm{v}\mathrm{B}_{0}\)[8], plays a crucial role, directly affecting the QF when added to output power Equations (12)-(14). Despite ASE's inherent presence, it is not considered time-variant due to its minimal impact on CR-SOAs' gain dynamics under typical operating conditions. The deep saturation of CR-SOAs, imperative for optimal functionality, effectively masks ASE's effect on gain. ASE can degrade the QF for Pe and Po, primarily due to the intensification of ASE, which increases the mean peak power of the '0' bits and deteriorates the QF (as shown in Figure 10). Nevertheless, the proposed CR-SOA-based approach continues to yield acceptable QF results, achieving 8.2 at 4 \(\mu\)W for Pe and 6.8 at 2 \(\mu\)W for Po. Our study demonstrates the exceptional performance of CR-SOA-based MZIs in high-speed optical logic operations, where efficiency plays a pivotal role in achieving desired performance enhancements. Efficiency, meticulously defined to encompass both energy and spectral aspects, is paramount for advancing high-speed optical computing. Through strategic optimization of key parameters such as transition duration (\(\tau_{\mathrm{t}}\)) and injection bias current (I), we notably enhance the operational efficacy of our device. A reduced \(\tau_{\mathrm{t}}\) expedites CR-SOA recovery, facilitating swift response to incoming signals and enhancing overall signal processing efficiency. Simultaneously, fine-tuning the current augments carrier introduction into the CR layer, thereby accelerating recovery processes and replenishing the AR layer.