## Appendix A
_IEEE Trans. Electron Devices_**2008**, _55_, 1798-1806. [CrossRef]
* [PERSON] et al. (2014) [PERSON]; [PERSON]; [PERSON]; [PERSON]; [PERSON] Improved modeling of medium voltage SiC MOSFET within wide temperature range. _IEEE Trans. Power Electron._**2014**, _29_, 2229-2236. [CrossRef]
* [PERSON] et al. (2018) [PERSON]; [PERSON]; [PERSON]; [PERSON] A temperature-dependent sic MOSFET modeling method based on MATLAB/Simulink. _IEEE Access_**2018**, \(6\), 4497-4505. [CrossRef]
* [PERSON] et al. (2008) [PERSON]; [PERSON]; [PERSON]; [PERSON]; [PERSON] Optimal design of resonant gate driver for buck converter based on a new analytical loss model. _IEEE Trans. Power Electron._**2008**, _23_, 653-666. [CrossRef]
* [PERSON] et al. (2009) [PERSON]; [PERSON]; [PERSON]; [PERSON] A practical switching loss model for buck voltage regulator. _IEEE Trans. Power Electron._**2009**, _24_, 700-713. [CrossRef]
* [PERSON] et al. (2010) [PERSON]; [PERSON]; [PERSON]; [PERSON]; [PERSON] An insight into the switching process of power MOSFETs: an improved analytical losses model. _IEEE Trans. Power Electron._**2010**, _25_, 1626-1640. [CrossRef]
* [PERSON] and [PERSON] (2014) [PERSON]; [PERSON] Impact of parasitic elements on the spurious triggering pulse in synchronous buck converter. _IEEE Trans. Power Electron._**2014**, _29_, 6672-6685. [CrossRef]
* [PERSON] and [PERSON] (2012) [PERSON]; [PERSON]; [PERSON] [PERSON] An investigation into the effects of the gate drive resistance on the losses of the MOSFET-Snubber-Diode configuration. _IEEE Trans. Power Electron._**2012**, _27_, 2657-2672. [CrossRef]
* [PERSON] and [PERSON] (2013) [PERSON]; [PERSON]; [PERSON] Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance. _IEEE Trans. Power Electron._**2013**, _28_, 573-590. [CrossRef]
* [PERSON] and [PERSON] (2016) [PERSON]; [PERSON]; [PERSON] An improved analytical model for predicting the switching performance of SiC MOSFETs. _J. Power Electron._**2016**, _16_, 374-387. [CrossRef]
* [PERSON] and [PERSON] (2019) [PERSON]; [PERSON] [PERSON] Analytical switching loss modeling based on datasheet parameters for MOSFETs in a half-bridge. _IEEE Trans. Power Electron._**2019**, _34_, 3700-3710. [CrossRef]
* [PERSON] et al. (2017) [PERSON]; [PERSON] [PERSON]; [PERSON]; [PERSON] [PERSON]; [PERSON]; [PERSON] [PERSON] The trench power MOSFET--Part II: application specific VDMOS, IDMOS, packaging, and reliability. _IEEE Trans. Electron Devices_**2017**, _64_, 692-712. [CrossRef]
* [PERSON] et al. (2014) [PERSON]; [PERSON]; [PERSON]; [PERSON] Datasheet driven silicon carbide power MOSFET model. _IEEE Trans. Power Electron._**2014**, _29_, 2220-2228. * IEC 60747-8:2010.Semiconductor Devices--Discrete Devices--Part 8: Field-Effect Transistors. Available online: [[https://webstore.iec.ch/publication/3289](https://webstore.iec.ch/publication/3289)]([https://webstore.iec.ch/publication/3289](https://webstore.iec.ch/publication/3289)) (accessed on 18 July 2019). * CREE SiC MOSFET C2M0025120D Datasheet. Available online: [[https://www.wolfspeed.com/media/downloads/161C2M0025120D.pdf](https://www.wolfspeed.com/media/downloads/161C2M0025120D.pdf)]([https://www.wolfspeed.com/media/downloads/161C2M0025120D.pdf](https://www.wolfspeed.com/media/downloads/161C2M0025120D.pdf)) (accessed on 24 July 2019). * [29] CREE SiC Diode C4D20120D Datasheet. Available online: [[https://www.wolfspeed.com/media/downloads/106/C4D20120D.pdf](https://www.wolfspeed.com/media/downloads/106/C4D20120D.pdf)]([https://www.wolfspeed.com/media/downloads/106/C4D20120D.pdf](https://www.wolfspeed.com/media/downloads/106/C4D20120D.pdf)) (accessed on 8 August 2019). * [30] [PERSON]; [PERSON]; [PERSON] A review of sic power module packaging technologies: Challenges, advances, and emerging issues. _IEEE J. Emerg. Sel. Top. Power Electron._**2019**, \(8\), 239-255. [CrossRef]
* [31] [PERSON]; [PERSON]; [PERSON]; [PERSON] Package parasitic inductance extraction and simulation model development for the high voltage cascade GaN HEMT. _IEEE Trans.