## 1 Introduction  
In specialized application scenarios such as aerospace, jet engines, and mine exploration [1, 2, 3, 4, 5, 6], integrated circuit components must endure extremely harsh environmental and climatic conditions, where temperature fluctuations can significantly impact circuit performance stability. These applications typically require precision operational amplifiers with low noise, low offset, and high bandwidth to amplify weak signals in noisy environments. Such amplifiers are often the first devices in the measurement front-end, determining the system's dynamic range, sensitivity, and anti-interference capability. Most precision amplifiers use chopper technology, optimizing power and area efficiency to achieve low noise and offset without generating noise aliasing [7, 8, 9, 10, 11]. Ordinary integrated circuits are generally designed for room-temperature environments. The threshold voltage, carrier mobility, and PN junction leakage current of most semiconductor devices are significantly affected by temperature changes, making it difficult for chips to operate stably under large temperature variations. In high-temperature environments, the gain and noise performance often deteriorate dramatically, and there is even a risk of circuit failure [12; 13]. Commercial CMOS technology platforms are typically qualified within the temperature range of \(-40\)\({}^{\circ}\)C to 125 \({}^{\circ}\)C, as significant leakage currents arise at higher temperatures. However, in automotive, aerospace, power management, and oil and gas extraction applications, temperatures can exceed 200 \({}^{\circ}\)C [14], as shown in Figure 1.  
Researchers represented by [PERSON] published a series of papers in the 1980s on the changes in electrical characteristic indicators such as the threshold voltage, leakage source current, and carrier mobility of MOS field-effect transistors in the ambient temperature range of 25 \({}^{\circ}\)C to 300 \({}^{\circ}\)C [16; 15], and proposed the classic Zero-Temperature Coefficient (ZTC) bias voltage theory [17; 18], providing a theoretical basis for integrated circuit design in high-temperature ranges. Since the turn of the century, on the one hand, the theory and practice of integrated circuit design in the high-temperature range have been further developed, and on the other hand, the application and development of SiC materials have provided a good solution for the design of high-temperature integrated circuits, because SiC devices have excellent thermal stability and extremely low leakage current in high-temperature environments [19; 20; 21; 22]. Research has shown that amplification circuits designed based on SiC technology can still exhibit good performance even in extremely high-temperature environments of 400 \({}^{\circ}\)C, which is comparable to classical semiconductor materials such as Si, GaAs, SiGe, etc. [23; 24; 25]. However, the development level of SiC technology is still in its early stages, with immature technology, high cost, and low yield rate restricting its widespread application. Therefore, scholars are still mainly exploring and researching the design of high-temperature integrated circuits using relatively mature semiconductor processes. SOI CMOS technology has demonstrated enhanced temperature capability, as its reduced substrate thickness enables low leakage current. SOI technology offers an effective solution for ensuring the high-temperature operation (up to 250 \({}^{\circ}\)C) of instrumentation amplifiers. Extensive research has been conducted on the performance and temperature compensation techniques of SOI CMOS devices, as well as other challenges associated with circuit operation at elevated temperatures [26; 27; 28; 29; 30]. Furthermore, a variety of fundamental circuit modules have been successfully implemented using SOI CMOS technology [31; 32; 33; 34; 35]. In recent years, design strategies for low-noise amplifiers (LNAs) operating over high-temperature ranges have been broadly categorized into two approaches.