## 5 Conclusions  
The results of the conducted studies have shown that when BTS films are deposited on dielectric substrate in a gas medium with an oxygen content of 40% or more, the main phase formed on the substrate is pure barium stannate, with the probable presence of secondary titanium oxides, which determines the absence of nonlinear dielectric properties of these films. The films deposited in the gas mixture Ar/O\({}_{2}\) 80/20 are a solid solution of BaTi\({}_{x}\)Sn\({}_{1-x}\)O\({}_{3}\) with a composition and growth orientation depending on the deposition temperature. BTS films subjected to high-temperature annealing in air have a well-formed crystal lattice at the absence of secondary phase inclusions, their component composition repeats the composition of the target, which has a positive effect on their electrophysiological properties, in particular on the nonlinearity and the level of dielectric losses. A comparison of the results obtained with the literature data showed that planar BTS structures on alumina exhibit promising characteristics for an elaboration of high-power microwave tunable devices based on them. Conceptualization, A.T.; methodology, A.T., A.G.; software, E.S. ; validation, A.T., A.G.; formal analysis, E.S., A.G., S.S.; investigation, E.S., A.G., S.S.; resources, A.T., writing--original draft preparation, A.T.; writing--review and editing, A.T.; visualization, E.S., S.S.; supervision, A.T.; project administration, A.T.; funding acquisition, A.T. All authors have read and agreed to the published version of the manuscript. \begin{table}
\begin{tabular}{c c c c c} \hline
**Composition** & **Substrate** & **Construction** & **Tunability, \%** & **Reference** \\ \hline BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & Pt/Si & MDM & 66 & [15] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & Pt/Si & MDM & 65 & [16] \\ BaTi\({}_{0.75}\)Sn\({}_{0.25}\)O\({}_{3}\) & Cu & MDM & 50 & [20] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/LaAlO\({}_{3}\) & MDM & 68 & [24] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/LaAlO\({}_{3}\) & MDM & 43 & [22] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/SrTiO\({}_{3}\) & MDM & 45 & [22] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/MgO & MDM & 50 & [22] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/Al\({}_{2}\)O\({}_{3}\) & MDM & 57 & [22] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaNiO\({}_{3}\)/Si & MDM & 54 & [26] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & ITO/glass & MDM & 58 & [17] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & Pt/Si & MDM & 72 & [18] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & Cu & MDM & 67 & [19] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaAlO\({}_{3}\) & planar & 17 & [23] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & MgO & planar & 15 & [29] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & Sapphire & planar & 20 & [25] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & LaAlO\({}_{3}\) & planar & 46 & [34] \\ BaTi\({}_{0.85}\)Sn\({}_{0.15}\)O\({}_{3}\) & SrTiO\({}_{3}\) & planar & 46 & [30] \\ BaTi\({}_{0.85}\)Sn\({}_{0.2}\)O\({}_{3}\) & Alumina & planar & 85 & This work \\ \hline \end{tabular}
\end{table} 
Table 1: Data on the tunability of MDM and planar capacitors based on barium titanate-stannate films. **Funding:** This research was funded by Russian Foundation for Basic Research (RFBR), grant number 19-37-90055. **Institutional Review Board Statement:** Not applicable. **Informed Consent Statement:** Not applicable. **Data Availability Statement:** Not applicable. **Conflicts of Interest:** The authors declare no conflict of interest. * [PERSON] et al. (2009) [PERSON]; [PERSON]; [PERSON]; [PERSON] [PERSON] The effect of stress on the dielectric and tunable properties of barium stannate titanate thin films. _Appl. Phys. Lett._**2009**, _94_, 052902. [CrossRef]
* [PERSON] et al.