## 3 Results and Discussion  
Based on the constructed device, the relevant TCAD software is used to simulate some characteristics of the relevant devices, and the various simulation results are displayed and analyzed to explore the functionality of the device. Moreover, differing from the traditional FinFET, the SOI FinFET in this study has three main independent gates: gate1, gate2, and gate3. The multi-gate-independent structure provides several optional combined control methods, which can be seen in Figure 4. Because the device is based on a more symmetrical gate structure, it has the following open states: (1) only gate1 or gate3 is open, which is the MODEL1 state; (2) only gate2 is open, which is the MODEL2 state;(3) when gate1 or gate3 and gate2 are open, this is the MODEL3 state; (4) only gate1 and gate2 are open, which is the MODEL4 state; (5) when gate1, gate2, and gate3 are all open, this is the MODEL5 state. Before providing a further explanation for the relevant results, some comparisons with the traditional model are made; that is, transfer characteristic and output characteristic are presented in Figure 5, respectively. MODEL5 is taken as an example to present the performance of the novel device. Figure 3: Device construction procedures: (**a**) procedure I (**b**) procedure II. Figure 4: Working mode diagram: (**a**) MODEL1 mode state; (**b**) MODEL2 mode state; (**c**) MODEL3 mode state; (**d**) MODEL4 mode state; (**e**) MODEL5 mode state. Figure 5: Transfer characteristic curves: TCAD simulation of the device used in this study and the traditional device model. Obviously, the results demonstrate that this kind of device has emerging applications. In Figure 5, the transfer characteristic curve of the device used in this study is in a balanced state, but the traditional device model is in a non-stable state. Under the same conditions, it needs more time to be in a working state. In Figure 6, the output characteristic curve of the device in this study is still in a balanced state compared with the traditional device model curve within an accepted spectrum. Then, this novel device can be applied in specific scenes. In each selected access mode, the specific state and relevant electrical characteristic curves are shown in Figure 7, according to which the transfer characteristic curve (Id-Vgs) of the independently controlled SOI FinFET device proposed in this study under different modes of operation is reflected. As seen, the ON state current of the FinFET device is significantly influenced by the different modes of operation. In Figure 7, one state is the case in which a single gate is on; that is, MODEL1 state mode. This is the side gate ON state. For this transfer curve, gate1 or gate3 is on and the other gates are off; approximately one state in Figure 7 is also the case in which a single gate is open, i.e., the top gate is open, which is the MODEL2 state. Here, gate2 is open and the other gates are closed. At this time, the relevant transfer characteristic curve in this state is presented; thus, the MODEL3 state in Figure 7 is a dual-gate control method that differs from the previous single-gate control method, whereby the top gate is open (gate2 is open) and a side gate is open (gate1 or gate3 is open), enabling gate1 or gate3 and gate2 to be open simultaneously. The corresponding transfer curve appears in this state. In Figure 7, one state is also the double-gate open state. At this time, a similar situation occurs and the top gate is closed (gate2 is in the closed state), whereas the side gates are in the open state (gate1 and gate3 are opened simultaneously), which can result in the MODEL4 working state mode, in which gate2 is closed and both gate1 and gate3 are open. For the final state in Figure 7, all gates are in the open state; that is, the top gate and the side gates on both sides are in the open state, which is similar to the general multi-gate FinFET device. Here, gate1, gate2, and gate3 are in the open state, which corresponds to the working state mode of MODEL5.