## 3 Transfer Setup with Glovebox Integration  
While it is true that deterministic placement methods have enabled the fabrication of 2D-based heterostructures exhibiting record high electronic performance and the observation of intriguing physical phenomena, there are two main challenges that still need to be addressed. One is the challenge posed by largely susceptive interface quality [109, 110, 111], and the other is the addressing of the difficulty associated with handling of air-sensitive 2D materials [113, 114]. It is known that even stable 2D materials like graphene are prone to adsorbate contamination. The source of contamination may arise from moisture, gases and/or hydrocarbons. Fortunately, these contaminants tend to segregate into small pockets, commonly referred to as bubbles/blisters, leaving behind micron-sized clean areas. This self-cleaning mechanism has enabled heterostructures based on graphene and other stable materials, like h-BN and MoS\({}_{2}\), to have quality comparable to their MBE analogues, although the device sizes are restricted to the micron-scale. Cross-sectional studies [113, 114] on various heterostructures have revealed that only a select few materials, such as graphene, h-BN, MoS\({}_{2}\), WS\({}_{2}\), and NbSe\({}_{2}\), exhibit the expected interlayer spacing for a defect-free idealistic interface predicted by density functional theory (DFT). Conversely, most other materials display increased interlayer distances, likely to be due to impurities and defects in the atomic structure at the interface. As a result, the formation of layered crystals, of which there are numerous, are prone to surface contamination and modification when exposed to air. These detrimental effects are present even if one of the layers forming the heterostructure is air stable. This is because, while in bulk crystals these effects are only seen on the top few atomic layers, when exfoliated down to the level of a single atomic layer (or few), these materials experience significant loss of quality, which directly impacts interface homogeneity, and as a result the electronic quality suffers in the formed heterostructures [111]. The other important problem that needs to be addressed is the handling of materials that tend to degrade quickly when exposed to air. A well-known example is found in the exfoliated flakes of black phosphorus, distinguished by its unique puckered structure that imparts strong anisotropy in mechanical and transport properties, contrasting with graphene and transition metal dichalcogenide (TMD) 2D materials. This distinctive mechanical anisotropy holds promise for applications, such as nanomechanical resonators, thermoelectric devices, and motion sensors, offering tunable functionalities inaccessible to isotropic materials [115]. Unfortunately, the strong hygroscopic surface of 2D black phosphorus readily attracts moisture and leads to its degradation, as confirmed by Atomic Force Microscope (AFM) findings [116], and by various reports of its electronic mobility degradation [116, 117, 118]. Similarly, superconducting material niobium diselenide tends to oxidize upon exposure to air, hindering the fabrication of ultrathin devices [113]. The aforementioned challenges can be addressed by performing the heterostructure stacking process inside an inert atmosphere, which is commonly facilitated by a glovebox. Within the glovebox, all important steps of the heterostructure formation, i.e., the exfoliation, transfer, and encapsulation, can be carried out. It has been demonstrated that the pristine electronic properties of air-sensitive materials, like black phosphorus or niobium diselenide, can be preserved when they are fully encapsulated between layers of h-BN, resulting in high carrier mobility and reliable FET behavior in black phosphorus, and the observation of superconducting transition in niobium diselenide [113, 119].