### Advanced PV Technologies with Distinct Efficiencies  
PV solar cells are pivotal in harnessing solar energy to generate electricity, with their efficiency and effectiveness closely tied to the materials used in their construction. Among these, silicon (Si) remains the most prevalent, categorized into monocrystalline, polycrystalline, and amorphous types [3]. Moncrystalline Si cells are widely used in commercial applications, while polycrystalline cells offer a more cost-effective option with slightly lower performance. Amorphous Si cells, utilized in thin-film technologies, are flexible and lightweight but generally have lower efficiency. Thin-film solar cells, made from materials like cadmium telluride (CdTe), copper indium gallium selenide (CIGS), and amorphous Si, provide alternatives with their own advantages, such as reduced production costs and flexibility [4]. Perovskite (PVK) materials, such as methylammonium lead iodide (MAPbI3), have recently garnered attention for their high efficiency and low production costs, though their stability and scalability remain areas of active research [5]. Additionally, emerging technologies like organic PVs and quantum dot (QD) solar cells are being explored [6] for their potential to offer flexible, lightweight solutions and enhanced light absorption. Innovations in material properties, such as multi-junction cells and hybrid materials, continue to drive advancements in solar technology, but challenges such as stability, environmental impact, and large-scale manufacturing need to be addressed. The promise of Si photonics technological advances to provide high-performance, small, photonic-integrated circuits has attracted a lot of interest over the past few years. The incorporation of germanium (Ge-) or III-V material-based avalanche photodiodes (APDs) on Si photonics platforms provides very sensitive optical receivers for communication wavelengths [7]. APDs integrated on Si across multiple material systems, such as Si-germanium (Si-Ge), indium gallium arsenide-indium aluminum arsenide (InGaAs-InAlAs), indium arsenide QD (InAs QD), and indium arsenide-gallium arsenide QD (InAs-GaAs QD) structures, highlight distinct performance characteristics. Currently the most sophisticated, Si-Ge APDs have low breakdown voltages and large bandwidth because of their narrow multiplication areas, and they are perfect for high bit-rate operations because Si naturally has little excess noise. APDs based on III-V semiconductors, on the other hand, were merged utilizing either monolithic or heterogeneous techniques, in spite of their substantial lattice mismatch with Si. This lattice mismatch results in greater dark currents for bulk InGaAs-InAlAs systems grown on Si; however, some of these problems have been alleviated by the insertion of buffer layers [7]. As a viable substitute, InAs QD devices enable substantial dark current reduction and strong charge localization that increases resistance to faults. Similar to this, heterojunctions with intrinsic thin layers (HITs) structures have emerged in Si solar cells as a popular option among the top technologies. Improving the efficiency of these cells by 26.45% when illuminated from the top and 21.21% when illuminated from the back has been achieved utilizing the emitter a-Si:H(n) layer in p-type bifacial HIT solar cells [8]. PVK solar cells have drawn a lot of interest lately because of their constantly rising power conversion efficiency, easy solution production method, flyability, low weight, wearability, and inexpensive material components. Due to the development of appropriate interface and electrode materials, together with the production of high-quality PVK films made possible by low-temperature synthesis processes, the efficiency of PVK solar cells has exceeded 25% in recent years [9]. Additionally, the PVK cells have been upgraded through the application of metallic nanoparticles, leveraging the plasmonic effect. In p-n junction cells, metallic nanoparticles primarily enhance the optical plasmonic effect by aiding in photon capture.