## 1 Introduction  
The study of SiC and SiC has been carried out in the last decade (e.g., [1]). The study of SiC has been carried out in the last decade (e.g., [2]). The study of SiC has been carried out in the last decade (e.g., [3]). The study of SiC has been carried out in the last decade (e.g., [4]). The study of SiC has been carried out in the last decade (e.g  
## 1 Introduction  
SiC is a wide-bandgap binary semiconductor that has been extensively studied since the first method for reproducible synthesis was patented more than a hundred years ago [1]. Furthermore, SiC applications are proliferating, with the industrial production of single-crystal ingots being realized mainly by three methods: Physical Vapor Deposition (PVD), chemical vapor deposition (CVD), and high-temperature solutions [2]. It is well known that SiC crystallizes in three stable modifications: cubic, hexagonal, and rhombohedral. The coordination polyhedron is a Si-centered tetrahedron with C atoms at its vertices. The cubic structure of SiC is of the zinc-blende type that can be described as a series of double Si and C atomic layers along the (111) planes arranged one above the other along the [111] direction, often abbreviated as...cCaAbBcC..., where a, b, and c represent layers of Si atoms in one orientation and A, B, and C represent layers of C atoms in an orientation rotated by 60 degrees. The structure of SiC and the strong Si-C bonds predetermine the formation of various polytypes, with more than 250 different polytypes reported so far [3]. The SiC polytypes represent structural defects associated with a change in the arrangement of the Si-C double layers, thus often changing the symmetry of the crystal lattice and its parameters. Their classification and description have been summarized in various publications (e.g., [4]), with 3C-SiC meaning SiC with a cubic structure, while 2H-SiC is a polytype with an entirely hexagonal structure. The 3C-SiC polytype is thermodynamically stable, i.e., it is expected to be reproducibly synthesized at temperatures lower than 1500 \({}^{\circ}\)C. For a long time, the heteroepitaxial deposition of high-quality 3C-SiC layers on Si single-crystalline substrates as an industrial product with highly reproducible quality has been considered difficult to achieve because the cell parameters of 3C-SiC and Si, as well as their thermal expansion coefficients, are significantly different. [PERSON] et al. [5] have demonstrated for the first time a way to circumvent these problems with the so-called two-step method consisting of the deposition of an intermediate carbon layer at high temperature above 1300 \({}^{\circ}\)C by pyrolysis of propane in hydrogen and the subsequent deposition of a SiC layer synthesized from a hydrocarbon precursor and silane in a hydrogen flow at similar temperatures. The intermediate layer formed in the first stage compensates for the incommensurability of the lattices of the two materials. This layer allows for the synthesis of high-quality SiC in the second stage of the process. Later on, [PERSON] et al. [6] have investigated the deposition of high-quality SiC films on 6\({}^{\prime}\) Si substrates with orientations (001), (011), or (111) in a four-step process in which, compared to the original one by [PERSON] et al. [5], two initial steps have been added, namely annealing in high vacuum of 10\({}^{-5}\) Torr and temperatures of about 500-600 \({}^{\circ}\)C for several hours and the deposition of SiC by carbonization in a CVD process at about 1120 \({}^{\circ}\)C and increasing the temperature to the working temperature of about 1350 \({}^{\circ}\)C for the synthesis of SiC from trichlorosilane and ethylene. We note that the intermediate film synthesis of nanocrystalline SiC usually occurs at temperatures above 1200 \({}^{\circ}\)C [5,6].