## 4 Conclusions  
In conclusion, the investigation of amorphous indium-gallium-zinc oxide memory technology has definitively demonstrated its strong compatibility and effectiveness for utilization in advanced multilevel-unit NAND memory applications. This device utilizes uniformly structured hafnium-zirconium oxide thin films in its key components, including the barrier layer, charge trapping layer, and tunneling layer. As a result, it provides exceptional programmability and erasibility, distinguishing itself in the field of memory technologies. The use of these uniform HfZrO thin films not only simplifies the manufacturing process but also improves the device's performance in important aspects. An outstanding accomplishment of this a-IGZO memory device is its capacity to achieve substantial threshold voltage disparities, around 2 volts for every memory level, while functioning at comparatively low programming voltages, specifically below 14 volts. The ability to differentiate between different states with minimal energy consumption is crucial for the efficient functioning of multilevel NAND units. Additionally, the device exhibits strong retention properties, guaranteeing that data remain stable and can be retrieved over long periods of time. This is crucial for dependable memory storage solutions. Moreover, the uniform composition of the oxide stack employed in this device not only streamlines the manufacturing process but also enhances the compatibility of materials, making it advantageous for incorporating the memory technology into different electronic platforms. The use of a consistent material composition throughout the layers of the device simplifies the processing, resulting in reduced production complexities and costs. This makes it a more appealing choice for large-scale manufacturing. Moreover, the homogeneous oxide stack's compatibility with established semiconductor technologies enables the smooth incorporation of a-IGZO memory into present electronic systems, broadening its potential applications in various industries. This research highlights the considerable capacity of a-IGZO memory devices to advance the field of NAND memory technology. The utilization of low operational voltages, coupled with a significant distinction between memory statesand the guarantee of data stability, results in the emergence of a-IGZO memory as a highly promising solution for future memory storage requirements. This technology offers a combination of efficiency, reliability, and compatibility that effectively fulfills the demands of contemporary electronic devices.  
The following supporting information can be downloaded at: [[https://www.mdpi.com/article/10.3390/app14062588/s1](https://www.mdpi.com/article/10.3390/app14062588/s1)]([https://www.mdpi.com/article/10.3390/app14062588/s1](https://www.mdpi.com/article/10.3390/app14062588/s1)).  
Conceptualization, Z.X.; investigation, K.W., J.L., Z.W., H.J. and R.L.; data curation, L.W. and F.Y.; writing--original draft preparation, M.S.; funding acquisition, R.J. All authors have read and agreed to the published version of the manuscript.  
It is sponsored by the Natural Science Foundation of Ningbo Municipality (2023)007) and the Natural Sciences Fund of Zhejiang Province (LDT23F05015F05). This work was also supported by the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.  
Not applicable.  
Data Availability StatementData is contained within the article and Supplementary Materials.  
The authors declare no conflicts of interest.