## 7 Scientific and Practical Significance of the Study Results  
Currently, quite a large amount of experimental data have been accumulated on the use of proton semiconductors and dielectrics (PSCD), mainly in the field of electrochemical technologies and physical chemistry (when developing solid-state electrolytes (perovskites, orthoperiodates and alkali metal biperiodates of alkali metals) [18; 19; 20; 21; 22; 23; 24; 25]. At the same time, there are not many practical applications of PSCD properties [17; 26; 27; 28; 29; 30; 31; 32] in the field of theoretical electrical engineering [33; 34; 35; 36; 37; 38; 39; 40; 41], physical electronics and microelectronics [42]. Theoretical developments aimed at applying quantum kinetic theory of proton conductivity and polarization [7; 12; 29; 30; 21; 22; 23; 16] to questions and quantum theory of high-temperature superconductivity [43] are relevant. Semi-empirical studies of migration of adsorbed protons on the surface of single-layer carbonaceous nanotubes [44] are not complete, due to the lack of a strict theoretical justification: (1) the relationship between the configuration of the tube surface and the dominant physical mechanism of proton transfer (tunnel or thermally activated proton transfer through a potential barrier); (2) temperature dependence of the probability of tunnel crossings of protons; (3) the forms of potential relief and activation energy for protons. The methods of quantum kinetic theory, the foundations of which are laid by the authors [1; 2], will allow, using the apparatus of the density matrix [12; 13; 15; 16; 26; 27], to consider in more detail the quantum mechanism of the tunnel transfer of protons in nanoscale materials with high-proton conductivity at a stricter theoretical level. The study of the processes of charge accumulation and relaxation in nanoscale PSCD (low-temperature electret effect) in the development of hydrogen energy fuel cells [45; 46; 47; 48; 49] in the field of space technologies and for electrochemical technologies [50; 51; 52; 53; 54] is an important issue. Theoretically discovered electrophysical properties of the nano-sized state of HBC [2; 3; 13; 27] open the prospects for further research of tunnel diffusion polarization in proton semiconductors and dielectrics (PSCD). This could be used to develop the theoretical foundations of universal software and hardware designed to predict properties and optimize the numerical values of the characteristic parameters of structure defects in materials of the PSDC class, used as working elements of circuits of various electrical and radio electronic devices. The development of the generalized nonlinear kinetic theory of the thermally activated depolarization will allow one to adapt the structure of mathematical and computer modeling algorithms in the case of electrophysical processes in heterogeneous functional elements of devices based on HBC (MDS, MSM structures) operating in the wide range of field parameters (100 kV/m-1000 MV/m) and temperatures (0-1500 K). Mathematical modeling of quantum proton transfer in systems from thin potential barriers with potential pits containing quantum-dimensional energy levels is relevant in the development of physical principles and schemes for the operation of resonant tunnel diodes (RTD) and quantum field effect transistors based on PSCD, for microelectronics, radio electronics and quantum electronics [55; 56; 57; 58; 59]. The results of research in the field of tunnel diffusion polarization in materials of the PSCD class will find future application in the development of schemes for numerical optimization of structure parameters and in the prediction of the properties of ferroelectrics of the HBC class (KDP, DKDP).