## 4 Analytical Discussion
### Methodology Journal Evaluation
According to the analysis of the most cited articles, YIG film growth has been demonstrated on gadolinium gallium gamnet (GGG) (with a frequency of sixty-eight), yttrium aluminum garnet (YAG) (with a frequency of seven), silicon (with a frequency of five), and quartz (with a frequency of four) substrates. Before film deposition, substrates are initially cleaned. The substrate was cleansed using a different method. As detailed by [PERSON] et al. [94], substrates were cleaned by rinsing them in ultrasonic baths of acetone, isopropyl alcohol, deionized water, and isopropyl alcohol, followed by drying them with dry nitrogen. The results of the substrates utilized for YIG growth are summarized below:  
* YIG growth on GGG was recent and demonstrated by the majority of papers. GGG substrate was chosen among the most cited publications for growing YIG films because it matches the same crystal structure and lattice constant as YIG (12.383 A /12.376 A; GGG/YIG) and has similar thermal expansion coefficients [26; 81]. Moreover, GGG substrates had the lowest lattice misfit (0.057%) for YIG/Ce-YIG thin film development [125]. [PERSON] et al. [7] indicate that YIG film growth on GGG substrate prepared by PLD shows no negligible lattice misfit. Due to pseudomorphic development on substrates made of gadolinium gallium garnet (Gd\({}_{3}\)Ga\({}_{5}\)O\({}_{12}\), GGG), which has excellent lattice matching, the reported YIG films [94] have an incredibly high crystalline purity. * In papers, the focus on YIG growth on YAG substrates has been presented in [16; 18; 37; 95; 111; 126; 127]. Researchers may favor YAG substrate due to its greater lattice mismatch compared with YIG on GGG, cheaper cost, and higher accessibility compared with GGG substrates. According to [PERSON] et al., [126] YIG/YAG samples have a narrower FMR linewidth than YIG films deposited on GGG under the same conditions, suggesting that lattice mismatch has a positive effect on the magnetic properties of the YIG films. * To integrate this material into silicon photonic and spintronic devices, it is necessary to deposit phase-pure YIG films on Si substrates [131]. The attention on YIG growth on Si substrates is discussed in [11; 12; 92; 115; 124]. The lattice parameter of YIG (12.376 A) is significantly greater than that of Si (5.431 A) [12]. Due to a lattice mismatch between the silicon substrate and YIG, the synthesis of YIG on silicon or SOI substrates has been a challenge [136]. Growth of YIG on semiconductor substrates has been demonstrated using the PLD [11; 12; 124] and sputtering [92; 115] techniques. By minimizing the impacts of heat processing on YIG layers, waveguides without cracks or delamination were demonstrated. The significant thermal mismatching coefficient necessitates a low growth temperature to avoid garnet film from cracking [12]. * Garnet films grown on quartz substrates are shown in [12; 33; 34; 115]. Garnet films produced and crystallized on Si and quartz are polycrystalline due to the absence of an epitaxial bond with the substrate [12]. These applications demonstrate that the growth of YIG on substrates has altered their properties as a result of substrate effects. The films were characterized by the different measurements summarized in Figure 5. The characterization of the films was obtained from the analysis of the top 100 cited articles. It demonstrates that there are six variables used to characterize films, including the structural, morphological, magnetic, magneto-optical, electrical, and optical properties. Table 4 displays the frequency of the film's categorization. Below is a summary of the film's characterization and measurements.