## 1 Introduction  
The research and development of improved and specialized nanofabrication procedures is a perennial need in both industry and research fields. One example of a relevant approach for the growth of nanostructures is _Focused Ion Beam-Induced Deposition_ (FIBID), a direct-write single-step technique that exploits the interactions between a focused beam of charged ions and a substrate to induce the decomposition of a gaseous precursor material [1, 2]. Relying on the direct deposition of the material via these interactions only, without the usage of resists or any other intermediate process, FIBID represents a highly flexible and reliable approach for the single-step patterning of different materials [3, 4, 5, 6, 7]. Conventional FIBID is performed by injecting a gaseous precursor material, containing the element of interest, in close proximity to a substrate. Precursor molecules adsorb on its top surface, constituting a molecular monolayer in dynamical equilibrium with the vacuum system of the instrument chamber. The beam is then scanned on the substrate, tracing a previously-defined pattern. The energy exchange between the ions in the beam and the molecules in the substrate results in the emission of secondary electrons (among other particles) near the point of irradiation, whose energy, when transferred to the adsorbed precursor molecules, induces their dissociation into volatile and non-volatile parts. The volatile parts are pumped away by the vacuum system of the instrument, while the non-volatile constituents permanently remain on top of the substrate, forming a deposit with a shape that follows the path traced by the beam. One of the most significant drawbacks of this technique is its _serial_ nature--in FIBID, the features to be grown are scanned sequentially and typically one at a time. Furthermore, structures grown by FIBID typically find their maximum size in the hundreds of \(\upmu\)m, with higher throughput techniques (e.g., optical [8] and electron-beam lithography [9]) being used for large-scale patterns. The usage of FIBID is thus commonly limited to small features, due to the unfavorable throughput and the risk of the appearance of growth artifacts related to instrument strain over long operating times. It is not unusual for the exposed area to moderately drift in time scales of minutes (due to ambient noise or focused beam instability), which is usually negligible for short deposition times, but it can severely hinder the proper growth of larger features. Very recently, the usage of FIBID under cryogenic conditions (Cryo-FIBID) was reported to yield an increase in the deposition processing time of two orders of magnitude [10]. By injecting the precursor with the substrate previously cooled below the condensation temperature of the precursor gas, a thick layer of condensed precursor forms on the substrate surface, providing a much larger amount of material available for decomposition than the gaseous molecular monolayer would. The precursor overabundance allows for the usage of reduced ion doses, which result in much shorter processing times [11]. A functionally similar approach that makes use of a focused beam of electrons instead of ions has also been successfully demonstrated in the growth of platinum [12; 13] and copper [14] nanostructures. The processing speed reportedly increases by two orders of magnitude for the Cryo-FIBID of nanostructures based on tungsten [10], platinum [15], and cobalt [16]. Combined with the fact that the ion interaction volume is mostly localized within the condensed layer, the low ion dose employed in Cryo-FIBID processes also effectively nullifies Ga\({}^{+}\) implantation and substrate modification, both of which are unavoidable (and usually unwanted) features of conventional FIBID [17; 18]. With the fundamentals of conventional FIBID remaining the same, Cryo-FIBID is still a serial deposition process, yet such a drastic increase in processing speed permits the growth of much larger features in a shorter time.