## 3 Results and Discussion  
### Initial Stages of STO Film Growth  
The structure, phase composition, and electrical properties of multicomponent films depend on the conditions under which the initial stages of layer growth are realized--nucleation and coalescence. The mechanisms of nucleation are determined by the competition of desorption, surface diffusion, and nucleation processes, the intensity of which, in turn, depends on the substrate temperature and the working gas pressure. It is known [51,52] that the formation of highly oriented multicomponent film is realized during the deposition of vapors with low supersaturation. In this case, the free energy of formation of oriented islands is lower than the free energy of formation of unoriented three-dimensional nuclei. Consequently, in order to grow oriented films, at the stage of their nucleation, it is advisable to create conditions that ensure weak supersaturation. The effect of technological parameters on the growth mechanisms of strontium titanate-like BST films on silicon carbide was studied in [53]. In this work, it was shown that the deposition of FE films on silicon carbide at working gas pressures of about 10 Pa makes it possible to realize low condensation rates determined using supersaturation, while a substrate temperature of 900 \({}^{\circ}\)C ensures active diffusion of adatoms before their attachment to the islands. Thus, oriented crystallization processes on the substrate's surface are stimulated, which can lead to the formation of predominantly oriented films. In this regard, in this work, the initial stages of STO film growth on silicon carbide were studied at temperatures of 800-900 \({}^{\circ}\)C and pressures of 6-10 Pa. When studying the mechanisms of nucleation of strontium titanate films on silicon carbide substrates, the analysis of the energy spectra of backscattered ions from STO island films makes it possible to determine the geometric dimensions of the islands, the spread of their heights, and the degree of filling of the substrate with islands [54]. Figure 1 shows the spectra of helium ions after their interaction with island films deposited at different working gas pressures and substrate temperatures. It can be seen from the graph that the spectra of films deposited at pressures of 6 and 10 Pa are similar to each other, which indicates similar mechanisms of film formation in this pressure range. The peaks corresponding to ion scattering on the heavy elements of the film have an asymmetric triangular shape with an overextended low-energy front. A comparison of the model and experimental spectra obtained from films deposited at pressures of between 6 and 10 Pa allows us to conclude that the height of the islands is 3-4 nm and the degree of filling of the substrate with islands is 75% at the same amount of substance on the surface of the substrate. The shape of the spectra indicates an island height spread of about 50%, which corresponds to the film growth mechanism of Volmer-Weber. The spectrum of backscattered ions from the film deposited at a temperature of 900 \({}^{\circ}\)C demonstrates the most prolonged low-energy front, which indicates a greater dispersion of islands in size. Analysis of the graphs for films deposited at different substrate temperatures allows us to draw conclusions similar to the previous ones, with the difference being that the amount of substance on the substrate heated to 900 \({}^{\circ}\)C is two times less than in the case of T\({}_{\rm s}\) = 800 \({}^{\circ}\)C (the height of the islands is about 3-5 nm, but the degree of coverage decreases from 75 to 50%). It is obvious that at T\({}_{\rm s}\) = 900 \({}^{\circ}\)C, the intensity of re-evaporation of adatoms from the substrate surface increases. Figure 2 shows the dependence of the height of the islands and the degree of filling of the substrate with islands on the deposition time of the films.