## 3 Technology Modules
### Characterization of the Si/SiO\({}_{2}\) Interface Quality
The extracted dielectric constant \(\varepsilon_{\text{r}}=3.95\pm 0.04\) is well within the reported range of 3.70-4.00 [47; 48] and does not show any frequency dispersion. The clear shift of the measured data depending on the frequency compared to the calculated theoretical curve is caused by all charges, i.e., \(D_{\text{tot}}=D_{\text{f}}+D_{\text{lt}}\), in the vicinity of the interface. The polarity of this ensemble is positive. The frequency dispersion is also visible in the \(G_{\text{p}}/\omega\)-peak voltage location. From the polarity of the ensemble and the decreasing deviation from theory in the flatband condition with increasing frequency, we conclude that \(P_{\text{b}}\) defects located at the interface are predominant. This defect originates from a free bond of a Si atom, which was backbonded to three other Si atoms (Si\({}^{\circ}\equiv\) Si\({}_{3}\)) [49]. The positive polarity is caused by its 0-1 electron charge transition, where a single electron is loaded into the unoccupied, positively-charged Si atom [50,51]. By using the conductance method, we extract \(D_{\text{it}}=(5.6\pm 0.5)\cdot 10^{11}\,\text{V}^{-1}\text{cm}^{-2}\). From the hysteresis of the measured data for a single frequency, we extract \(D_{\text{r}}=(2\pm 0.3)\cdot 10^{11}\,\text{cm}^{-2}\) without any frequency dispersion observed. Subsequently, we approximate \(D_{\text{f}}\) to be on the order of \(10^{12}\,\text{cm}^{-2}\) due to the indistinguishability of all charges causing the capacitance voltage shift. Defects might also be distributed across the bulk of the oxide layer and then result in a bulk density of approximately \(D_{\text{f}}=5\cdot 10^{17}\,\text{cm}^{-3}\). In order to reduce defect concentrations, a post-metal annealing is carried out in forming gas N\({}_{2}\)H\({}_{2}\) at 400 \({}^{\circ}\)C for 30 min [52,53]. The measured capacitance and conductance of the annealed Al/SiO\({}_{2}\)/Si capacitor are shown in Figure 4d,e with an oxide thickness of \(16.0\pm 0.1\,\text{nm}\) and a top aluminum pad area of \(1.05\,\text{mm}^{2}\). The extracted dielectric constant is \(\epsilon_{\text{r}}=4.18\pm 0.04\), indicating incorporated hydrogen [48]. Single hydrogen atoms form strong O-H bonds to oxygen atoms, which lead to a low concentration of SiOH within the SiO\({}_{2}\) layer [54]. In comparison to the unannealed sample, the measured data does not show any frequency dispersion due to the successful passivation of the previously-measured \(P_{\text{b}}\) defects with hydrogen (\(\text{HSi}\equiv\text{Si}_{3}\)) [55, 56, 57, 58]. The polarity of the ensemble of these charges is negative. We extract \(D_{\text{it}}=(2\pm 1)\cdot 10^{10}\,\text{V}^{-1}\text{cm}^{-2}\), which agreed well with the literature [59] and is comparable to thermally-grown high-quality interfaces on \((100)\) silicon substrates. Subsequently, we determine \(D_{\text{f}}=1.41\cdot 10^{12}\,\text{cm}^{-2}\). Based on the low \(D_{\text{it}}\) and the absent frequency dispersion, we conclude the polarity of \(D_{\text{f}}\) to be negative. The subset of rechargeable defects \(D_{\text{r}}=(1.2\pm 0.1)\cdot 10^{11}\,\text{cm}^{-2}\) decreases only slightly. As a reference, measurements of an annealed Al/SiO\({}_{2}\)/Si capacitor with thermally-grown SiO\({}_{2}\) using RTP at a process temperature of 1050 \({}^{\circ}\)C in oxygen on \((111)\)\(n\)-type silicon substrate are carried out. The post-metal annealing is done using the same set of process parameters as stated above. The dielectric constant is measured to be \(\epsilon_{\text{r}}=3.74\pm 0.04\). The interface defect density \(D_{\text{lt}}=(3\pm 1)\cdot 10^{10}\,\text{V}^{-1}\text{cm}^{-2}\) is comparable to the passivated interface of the CVD-deposited SiO\({}_{2}\) discussed above. Similar fixed defect concentrations are measured with \(D_{\text{f}}=(1.31\pm 0.01)\cdot 10^{12}\,\text{cm}^{-2}\), while \(D_{\text{r}}=(2\pm 1)\cdot 10^{10}\,\text{cm}^{-2}\) is significantly smaller due to the higher process temperature.