## 1 Introduction
[22] compared the influence of various oxygen flow rates during the deposition of VO\({}_{2}\) using a pulsed laser deposition technique on resistivity and transition temperature. Seven sets of thin films were deposited using various oxygen flow rates ranging from 0.5 to 90 sccm while maintaining a constant background pressure. The authors showed that at low oxygen flow rates, i.e., 0.5 sccm and 1 sccm, very small crystalline islands were created on the substrate, whereas an increase in the flow rate caused an increase in the crystallites size because of the better surface diffusion. In this case, the flow rate influenced the surface roughness parameters[PERSON] Vanadium oxide thin films deposited with higher oxygen content showed two orders of change in resistance as a function of temperature. It was discussed that the grain size affects the nucleation effects, which in turn leads to a change in the transition temperature and can be observed in electrical measurements [22]. Furthermore, [PERSON] et al. [23] compared the electrical properties of vanadium oxide thin films prepared by magnetron sputtering with various O\({}_{2}\) contents in the gas mixture during preparation (5, 7.5, 10, 15%) and different substrate temperatures. The authors observed a correlation between the electrical properties of the sputtered V\({}_{x}\)O\({}_{y}\) samples and the deposition conditions. The thin films deposited at higher O\({}_{2}\) content were shown to be amorphous. The resistivity of the samples increased with increasing partial oxygen pressure during the preparation process from 0.02 to 100 \(\Omega\)cm. Moreover, higher resistivity caused an increase in the activation energy values calculated from the Arrhenius equation. Those values ranged from 0.04 to 0.24 eV, and this behaviour was correlated with the electrical charge transport energy. The prepared vanadium oxides exhibited the Meyer-Neldel rule of charge transport mechanism: invert or conventional depending on the O\({}_{2}\) pressure and substrate temperature during magnetron sputtering [23]. In turn, [PERSON] et al. [24] discussed the microstructure, electrical and optical properties of as-deposited and annealed V\({}_{x}\)O\({}_{y}\) thin films prepared by magnetron sputtering with a low O\({}_{2}\):Ar flow ratio. Measurements of the optical properties revealed that the as-deposited thin film had an absorption edge at ca. 400 nm. The authors pointed out that prepared V\({}_{x}\)O\({}_{y}\) thin films are desired as thermal sensing materials based on their high TCR value (2.0-3.1%/\({}^{\circ}\)C) [24]. [PERSON] et al. [25] discussed the influence of oxygen partial pressure on the properties of vanadium oxide thin films deposited by magnetron sputtering with different argon to oxygen gas mixtures and pure oxygen. The argon flow rate was constant and equal to 20 sccm while the oxygen values were 1, 3 and 5 sccm. Analysis of the X-ray diffraction spectra showed that all the deposited samples were amorphous, while those depositedwith an oxygen flow rate of 3 sccm and above had a lamellar structure. The samples prepared with a higher oxygen content exhibited gasochromic properties and are potential candidates for hydrogen gas sensors [25]. [PERSON] et al. [26] examined vanadium dioxide prepared by pulsed laser deposition and rapid thermal annealing. The authors focused on producing a good quality thin film that exhibited the semiconductor-metal phase transition. They produced thin films using various substrates and showed that the control of the annealing temperature causes a change in transition temperature. The authors obtained vanadium dioxide with a thickness of 25 nm and a transition temperature equal to 52 \({}^{\circ}\)C on both quartz and silicon substrates, which is an achievement compared with the usual transient temperature of 68 \({}^{\circ}\)C [26]. According to [PERSON] et al. [27], atomic layer deposition leads to the fabrication of amorphous vanadium oxide, while the annealing of the as-deposited samples leads to the phase transition to crystalline structures.