## 4 Conclusions  
Predominantly oriented, unstrained strontium titanate films of high structural quality were grown for the first time on semi-insulating silicon carbide substrates using magnetron sputtering. Investigations of the initial stages of STO film growth on silicon carbide showed that in the considered ranges of substrate temperatures and working gas pressures, the nucleation of the STO phase on the SiC surface occurs via the Volmer-Weber island mechanism, caused by the structural mismatch between the substrate and the film and their weak interphase bond. According to the X-ray diffraction analysis, with an increase in the deposition temperature, there is a significant improvement in the crystal structure and minimization of internal stresses in the STO film lattice. The tendency to improve the structure is most pronounced for films deposited at elevated working gas pressure under low supersaturation conditions. Planar capacitors formed on the basis of oriented STO films on silicon carbide showed tunability n = 36% at the level of microwave losses and response time parameters, which are significantly better than the data published today for planar BST elements. A CQF value of more than 2500 allows us to expect promising characteristics in high-power tunable microwave elements based on STO films on SiC. The results obtained show that tunable capacitors and phase shifters for high-power microwave systems can be implemented based on SrTiO\({}_{3}\)/SiC planar structures. The development of  
\begin{table}
\begin{tabular}{c c c c c c} \hline \hline \(\mathbf{T_{s}}\), \({}^{\circ}\)C; & \(\mathbf{P}\), \(\mathbf{IIa}\) & \(\mathbf{Tunability}\), \% & \(\mathbf{tg\delta}\) (\(\mathbf{U0}\)) & \(\mathbf{tg\delta}\) (\(\mathbf{U_{max}}\)) & **CQF (2 GHz)** \\ \hline \multirow{3}{*}{900} & 3 & 32.7 & 0.009 & 0.01 & 1725 \\ \cline{2-6}  & 6 & 33.4 & 0.012 & 0.0085 & 1684 \\ \cline{2-6}  & 10 & 36 & 0.008 & 0.009 & 2565 \\ \hline
650 & 10 & 26.5 & 0.012 & 0.016 & 470 \\ \hline \hline \end{tabular}
\end{table}
Table 1: Comparative electrical characteristics of capacitors based on STO films on silicon carbide.  
designs and implementation of phased antenna arrays based on high-Q phase shifters in the frequency range of 1-15 GHz seems promising. To achieve this goal, the next step of our research is planned to be the search for technological ways to increase the tunability of STO capacitors, studying them at elevated levels of microwave power, with the purpose of their further application as lumped tunable elements in microwave phase shifters.  
Conceptualization A.T.; Methodology, A.T.; Software, I.S. and V.S.; Validation A.T. and A.B.; Investigation A.T., E.S., A.B., A.K. and V.S.; Resources, A.T., I.S. and V.S.; Data Curation, A.T., I.S. and V.S.; Writing--Original Draft Preparation, A.T.; Writing--Review and Editing, A.T. and A.B.; Visualization, E.S., A.B. and A.K.; Supervision, A.T.; Project Administration, E.S.; Funding Acquisition, A.T. All authors have read and agreed to the published version of the manuscript.  
This research was funded by the grant of The Ministry of Education and Science of Russian Federation (project Goszadanie No 075-01438-22-07 FSEE-2022-0015). [PERSON] and [PERSON] worked independently of grant support.  
Not applicable.  
The original contributions presented in the study are included in the article, further inquiries can be directed to the corresponding author.  
The authors declare no conflict of interest.