# Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
## 5 Conclusions  
The NW-FET device exhibited a smaller ionizing radiation sensitivity than that of the FinFET device. The NW-FET had a larger insulator area than that of the FinFET, approximately 96 nm\({}^{2}\). However, the NW-FET was less affected by the TID effect than the FinFET. The structure with a larger gate controllability confirmed that the TID effect  
Figure 6: FinFET and NW-FET inverter operation characteristics according to the accumulated radiation dose. (**a**,**e**) inverter input pulse; (**b**) FinFET inverter output for each total dose; (**c**) FinFET inverter operation of falling edge; (**d**) FinFET inverter operation of rising edge; (**f**) NW-FET inverter output for each total dose; (**g**) NW-FET inverter operation of falling edge; (**h**) NW-FET inverter operation of rising edge. can be effectively overcome. To improve the gate controllability method, a GAA structure and high-\(k\) dielectric materials have to be introduced. In addition, we not only analyzed the effect of the TID on the device but also applied it to the inverter using the BSIM CMG parameter reflecting the TID. The TID effect changed the operating characteristics of the inverter and degraded the reliability. However, the NW-FET inverter operation had a smaller variation with the TID than that of the FinFET inverter operation because of its high gate controllability. Therefore, NW-FET devices are tolerant to the TID, which improves the circuit operation stability in radiation environments. Carried out the simulation and methodology, H.W. ; Writing--Original draft, H.W. ; design figures, H.W. ; was responsible for project administration, M.K. ; supervision, M.K. ; proofreading of the manuscript, M.K. ; funding, M.K. All authors have read and agreed to the published version of the manuscript. This research was supported by the MOTIE (Ministry of Trade, Industry and Energy (10085645) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor devices and in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1A6A1A03023788) and in part by Korea Institute for Advancement of Technology (KJAT) grant funded by the Korea Government (MOTIE) (N000P008500, The Competency Development Program for Industry Specialist) and in part by National R&D Program through the National Research Foundation of Korea(NRF) funded by Ministry of Science and ICT(2020M3F3A2A01085755). Not applicable. * [PERSON] et al. (2018) [PERSON] [PERSON]; [PERSON] [PERSON]; [PERSON]; [PERSON]; [PERSON]; [PERSON] [PERSON] FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability. _IEEE J. Electron Devices Soc._**2018,** \(6\), 332-340. [CrossRef]
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