## 3 Results  
A 10 \(\upmu\)m thick SiC sensor with an active area of 1 \(\times\) 1 cm\({}^{2}\) and 370 \(\upmu\)m bulk substrate was characterized to study the response in charge as a function of the applied voltage, using a final applicator of 35 mm diameter, a pulse duration of 2 \(\upmu\)s and a pulse frequency of 30 Hz. A Keithley 6517A electrometer was used both to supply the bias voltage and to read the beam charge directly connecting the detector to the electrometer by using a BNC cable. To investigate the dependency of the charge response with the externally applied bias for the most extreme conditions, in terms of delivered dose and consequently produced charge in the active layer of the SiC sensor, a total of 20 pulses have been acquired using the highest beam current and 35 mm applicator (corresponding to about 5 Gy/p). As expected, as long as the applied voltage increases, the response increases in a linear way, reaching a flat region for which the detector response is fairly independent of the applied voltage, indicating full depletion of the sensor-active region. In this region, we can assume that all the produced electron-hole pairs are properly collected. For the SiC detector of 10 \(\upmu\)m thickness, which is the one mainly characterized for this experimental campaign, we chose an operational voltage of 480 V, about 50 V above the beginning of the flat region. The response of the 10 \(\upmu\)m thick SiC detector 1 \(\times\) 1 cm\({}^{2}\) active area was investigated in terms of increasing dose per pulse, keeping a 2 \(\upmu\)s pulse duration fixed (Figure 5a). As described above, different doses per pulse at the irradiation point were obtained by changing the applicator diameter and the distance from the applicator. The dose delivered per pulse at the SiC position for each different configuration was measured with both RCFs and alanine detectors as it is shown in Figure 5a. The SiC response was compared with the response of a commercially available Silicon diode (PTW Dosimetry Diode PR TM60020) of 1 mm\({}^{2}\) area and 20 \(\upmu\)m thickness and which does not require any applied voltage, irradiated at the same conditions. As shown in Figure 5a, SiC's response in charge is linear with the dose per pulse up to about 2 Gy/p, in contrast with the Silicon diode which starts to saturate for a dose per pulse around 0.5 Gy/p. The slight under-response of SiCs at higher D/p (visible for the last two points on the right) is probably not due to the sensor saturation itself but likely to the used electrometer that has a limitation in the maximum acceptable peak current. A maximum current of 20 mA is nominally acceptable for the Keithley 6517A, while an instantaneous current of hundreds of mA was produced inside the detector for most of the measurements performed in the FLASH regime. Similar considerations can be done for the UNIDOS electrometer used to acquire the signal of the Silicon diode, although saturation issues of the detector itself cannot be excluded for this case. Indeed, for the latter, a clearer saturation curve can be observed reasonably resulting from both the sensor and the electrometer saturation. Solutions to avoid the overflow of the electrometer are currently under investigation so that if intrinsic limits of the detector in terms of dose per pulse are present and existing at these regimes, these will be clearly investigated. Besides this study of linearity response at high dose rates, a characterization of the detector radiation hardness was performed to evaluate the leakage current as a function of the accumulated total delivered dose up to 90 KGy, using the 35 mm applicator. Figure 5b shows the leakage current measured after each measurement that was performed using the maximum dose per pulse achievable, i.e., 5 Gy/pulse, and accumulating a total number of 400 pulses at 5 Hz. As can be seen in Figure 5b, no degradation of the sensor, specifically of the signal-to-noise ratio, is observed up to 90 kGy.