high-quality electronic transport properties, circumventing the need for extensive optimization of growth conditions required in MBE. The interfaces in vdW heterostructures are atomically sharp, with strong covalent bonding within each layer preventing the interdiffusion typically observed in epitaxially grown materials. Furthermore, fabricating electrical contacts to multiple atomic planes within a vdW heterostructure is significantly more straightforward compared to the complexities involved in MBE-grown structures. A crucial step in the fabrication of van der Waals (vdW) heterostructures is the transfer process. This technique involves lifting individual two-dimensional (2D) material flakes, accurately positioning them at desired sites, and repeating these actions as necessary [5; 6; 9]. This \"atomic-scale Lego\" strategy enables the assembly of highly adaptable devices tailored to specific needs. The ability to form such precise and flexible heterostructures has facilitated the study of exciting physical phenomena, such as superconductivity, topological insulators, valleytronics, and twistronics [1; 2; 10; 11; 12; 13; 14; 15; 16; 17; 18]. From an applications standpoint, this advancement has unlocked numerous opportunities in the realms of electronics and optoelectronics and has paved the way for the development of various devices, including transistors [19; 20; 21; 22; 23; 24; 25; 26; 27; 28; 29], photodetectors [30; 31; 32; 33; 34; 35; 36; 37; 38; 39; 40; 41; 42; 43; 44; 45], solar cells [46; 47; 48], light-emitting devices [49; 50; 51; 52; 53], chemical and gas sensors [54; 55; 56], memory devices [57; 58; 59; 60; 61; 62; 63], neural networks and artificial intelligence systems [63; 64; 65; 66; 67; 68], among many others. In the realm of electronics, vdW heterostructures have notably enabled the development of high-performance vertical field-effect transistors (VFETs). These devices can be graphene-based, such as Gr/hBN/Gr [19; 20] and Gr/WS\({}_{2}\)/Gr [21], or they can involve stacking n-type and p-type 2D semiconductors, such as MoS\({}_{2}\)/WSe\({}_{2}\)[13], BP/SnSe\({}_{2}\)[22], SnSe\({}_{2}\)/WSe\({}_{2}\)[23], and GaTe/MoS\({}_{2}\)[33]. VFETs benefit from the ultra-short charge transport paths and clean interfaces provided by vdW heterostructures, resulting in enhanced ON/OFF ratios and lower power consumption. Additionally, vdW heterostructures improve 2D FETs by establishing pinning-free contact with semiconductors [24; 25]. Graphene, with its gate-tunable work function, shows promise in reducing contact resistance in WSe\({}_{2}\)[26] and MoS\({}_{2}\) transistors [27], and can be further enhanced with hBN encapsulation [28]. Moreover, WSe\({}_{2}\) FETs with metallic NiSe contacts [29] and lateral multi-junctions, like MoS\({}_{2}\) heterojunctions, exhibit record low contact resistance [9]. For optoelectronics-based applications, vdW heterostructures have gained widespread attention in creating efficient infrared photodetectors due to their high sensitivity and broad detection range [30; 31; 32; 33; 34; 35; 36; 37; 38; 39; 40; 41; 42; 43; 44; 45]. Traditional TMD/TMD vdW heterostructures were limited to visible wavelength ranges due to their large bandgaps. However, the introduction of new 2D materials, such as PdSe\({}_{2}\) and PtSe\({}_{2}\), has extended the performance of photodetectors to the infrared range. For example, MoS\({}_{2}\)/PdSe\({}_{2}\) vdW heterostructure photodetectors exhibit a wide spectral response from 450 nm to 10.6 \(\upmu\)m, with the highest photoresponsivity at 4 \(\upmu\)m [42]. These photodetectors benefit from the ultrashort charge transfer channels and strong built-in electric fields in vdW heterostructures, leading to high sensitivity and fast response speeds [43]. Additionally, black phosphorus (BP)-based vdW heterostructures, such as BP/MoS\({}_{2}\) and BP/InSe, have demonstrated high external quantum efficiencies and stable performance [43; 45].