## 1 Introduction  
Single-crystal silicon carbide (SiC) is a new high-powered, next-generation semiconductor material that can be used for chip production. This material has several important features that make it better than other materials for many purposes. For example, it has high dielectric strength against field collapse, high saturated electron drift velocity, high mechanical strength, great thermal conductivity, and excellent chemical stability. However, its chemical inertness and high strength make single-crystal silicon carbide very difficult to machine [1; 2; 3; 4; 5]. The material was used during the early development of the LED industry, and the flattening of SiC wafers was problematic from the very start. Grinding and polishing are generally done using a free-abrasive slurry against a copper or cast iron lapping plate. However, this is not very efficient, as it takes a long time and the cost is high. The removal of material during flattening in this way requires three-body wear in which material is removed by abrasive particles rolling and sliding in a slurry between the SiC wafer and the hard plate. The material removal rate by three-body wear is about one-tenth of that achievable by two-body wear. Such low processing efficiency is due to the fact that the abrasive particles spend 90% of the time rolling and only 10% sliding [6]. Mechanical polishing (MP) [7] and chemical mechanical planarization [8; 9; 10] are core technologies used in semiconductor manufacturing, but the material removal rate (MRR) is very low and takes a long time. Any methods that can improve performance should therefore be investigated. Several important studies have recently been carried out on diamond abrasive grinding. [PERSON] et al. [11] estimated the rate of material removal by lapping sapphire wafers. Their three-body wear model used a diamond slurry on metal-resin-bound lapping plates made with copper, aluminum, or zinc powder. Metal-resin plates combined with abrasives were also used. Two-body wear experiments were also performed using fixed diamond abrasives in a platen dressed with a low concentration of Al\({}_{2}\)O\({}_{3}\) slurry. Extensive tests were carried out, the basic purpose of which was to find an optimum lapping process for sapphire wafers. Lapping was done under different loads and at different rotation speeds and times. [PERSON] et al. [12] used arc diamond grinding wheels in a dressing process to investigate wear. Next, they studied the efficiency of different abrasives and bonding agents on the arc grinding wheel dressing process. The convex nonspherical SiC formed by the dressed arc diamond grinding wheels revealed that the dressing by both the resin and metal bonding agents was efficient and accurate. In addition, the diamond abrasives were distributed more evenly in the arc grinding wheels, and more sharp diamond points were exposed after dressing. [PERSON] et al. [13] used a new type of ultraprecise diamond grinding wheel to polish cadmium-copper nanoflim. Their results showed non-subsurface damage and an undeformed nanocutting intersecting surface. [PERSON] et al. [14] found that there was a transition from a brittle to a ductile mode in the single-edge cutting of single-crystal silicon material. This phenomenon occurred at a critical cutting thickness. In other words, at some stage, the cutting process caused plastic deformation, not brittle fractures. [PERSON] et al. [15] proposed a method for grinding hard and brittle material with nanodiamond grinding wheels with three different diamond grits in a ceramic bonded wheel, in which deionized (DI) water was used as the grinding slurry. The result clearly showed that double-side grinding could replace mechanical polishing. [PERSON] et al. [16] presented a plastic deformation theory for hard-brittle material which revealed that the energy needed for ductile grinding was lower than what could cause brittle fractures at a specific critical depth.