# Vertical GaN MOSFET Power Devices
## 6 Conclusions  
Vertical GaN MOSFETs are pivotal in the realm of power electronics due to their ability to provide higher efficiency, higher power density, fast switching ability, and good thermal performance. Consequently, these vertical GaN MOSFETs find extensive utility across a broad spectrum of applications, including power supplies, electric vehicles, renewable energy systems, and data centers, among others. This article delves comprehensively into \begin{table}
\begin{tabular}{c c c c c c c c} \hline \hline \multirow{2}{*}{**Year**} & \multirow{2}{*}{**Type**} & \multirow{2}{*}{**Substrate**} & \multirow{2}{*}{**Threshold**} & \multirow{2}{*}{**Breakdown**} & \multicolumn{2}{c}{**Specific**} & \multirow{2}{*}{**FFOM**} & \multirow{2}{*}{**References**} \\  & & & & **Voltage (V)** & & & **(mf-cm2)** & \\ \hline
2014 & CAVET & GaN & 0.5 & 1.5 & 2.2 & 1.022 & [116] \\ \hline
2014 & Vertical trench & \multirow{2}{*}{GaN} & \multirow{2}{*}{7} & \multirow{2}{*}{1.6} & \multirow{2}{*}{12.1} & \multirow{2}{*}{0.211} & \multirow{2}{*}{[41]} \\  & MOSFETVert & & & & & & \\ \hline
2015 & Vertical trench & \multirow{2}{*}{GaN} & \multirow{2}{*}{3.5} & \multirow{2}{*}{1.2} & \multirow{2}{*}{1.8} & \multirow{2}{*}{0.8} & \multirow{2}{*}{[66]} \\  & MOSFETVert & & & & & & \\ \hline
2016 & CAVET & GaN & 2.5 & 1.7 & 1.0 & 2.89 & [131] \\ \hline
2016 & Vertical trench & \multirow{2}{*}{GaN} & \multirow{2}{*}{3.5} & \multirow{2}{*}{1.6} & \multirow{2}{*}{2.7} & \multirow{2}{*}{0.95} & \multirow{2}{*}{[67]} \\  & MOSFET. & & & & & & \\ \hline
2017 & Vertical trench & \multirow{2}{*}{GaN} & \multirow{2}{*}{3.2} & \multirow{2}{*}{1} & \multirow{2}{*}{3.6} & \multirow{2}{*}{0.28} & \multirow{2}{*}{[115]} \\  & MOSFET (OG-FET) & & & & & & \\ \hline
2017 & GaN OG-FET & GaN & 4.7 & 1.4 & 2.2 & 0.89 & [73] \\ \hline
2017 & GaN fin FET & GaN & 1 & 1.2 & 0.2 & 7.2 & [72] \\ \hline
2019 & Vertical Power & \multirow{2}{*}{GaN} & \multirow{2}{*}{1.3} & \multirow{2}{*}{1.2} & \multirow{2}{*}{2.1} & \multirow{2}{*}{0.68} & \multirow{2}{*}{[119]} \\  & FinFETs & & & & & & \\ \hline
2020 & Vertical GaN planar & \multirow{2}{*}{GaN} & \multirow{2}{*}{2.5} & \multirow{2}{*}{1.2} & \multirow{2}{*}{1.4} & \multirow{2}{*}{1.03} & \multirow{2}{*}{[59]} \\  & MOSFET & & & & & & \\ \hline
2022 & Vertical trench & \multirow{2}{*}{GaN} & \multirow{2}{*}{3.1} & \multirow{2}{*}{1.3} & \multirow{2}{*}{1.93} & \multirow{2}{*}{0.87} & \multirow{2}{*}{[69]} \\  & MOSFET & & & & & & \\ \hline \hline \end{tabular}
\end{table} 
Table 1: The comparison of various vertical GaN transistors with a breakdown voltage greater than 1 kV. Figure 12: Benchmarking vertical GaN devices against lateral GaN MOSFET devices and vertical SiC devices. Adapted from Refs. [36; 41; 59; 66; 67; 69; 71; 72; 73; 74; 75; 76; 77; 78; 79; 80; 81; 82; 83; 84; 85; 86; 87; 88; 89; 82; 85; 87; 89; 80; 83; 86; 87; 88; 89; 84; 86; 87; 89; 88; 89; 80; 84; 87; 88; 89; 80; 85; 89; 86; 87; 88; 89; 81; 88;  
the accomplishments achieved thus far in the realm of GaN vertical devices. Additionally, it offers a thorough examination of various methodologies aimed at enhancing the breakdown voltage of these devices. The breakdown voltage is a critical parameter for power devices, as it governs their voltage-handling capacity, overvoltage protection, power conversion efficiency, design adaptability, and overall system reliability. Furthermore, while many of the techniques for improving the breakdown voltage of GaN vertical devices are consistent, it is worth noting that, in the case of GaN vertical MOSFETs, factors such as gate oxide thickness and quality also play a pivotal role in augmenting the breakdown voltage of these devices. Data curation, C.L. and A.-C.L. ; project administration, Y.-K.H. and C.-H.L. ; supervision, C.-H.L. and H.-C.K. ; writing--original draft, C.L. ; writing--review and editing, C.L. and Y.-K.H. All authors have read and agreed to the published version of the manuscript. Ministry of Science and Technology, Taiwan (112-2218-E-008-007-).