## 8 Performance
\begin{table}
\begin{tabular}{c c c c c} \hline \hline
**Deposition** & **Concise Description** & **Common** & **Features** & **References** \\
**Technique** & The prepared suspension is placed on the screen and is forced by pressure for its passage. & Electrolyte, anode and cathode & Scale-up is easily feasible. Formation of cracks take place in some certa based decrektrobs and has improper densification. & [12,103,113] \\ \hline
**Tape casting** & Deposition of ceramic film is done temporary support consisting of mobile sheet. Direct blade device is used to anode & Electrolyte and anode & Scale-up is easily feasible, multilayer cells production, electrolytes with various thickness can be produced. No & [12,103,114] \\  & have desired thickness. & & & \\  & & & & \\ \hline
**Atmospheric** & Plasma jet (-10,000 K) is used to melt particles which are then sprayed over the substrate with quick solidification. & Electrolyte, anode, cathode and inter connector & Rapid deposition, Films having varying microstructure and compositions can be produced, SOC layers can be deposited without sintering at metallic substrate, scale-up is easily feasible. & [12,103] \\ \hline
**Spray Pyrose** & A suspension comprised of powder is sprayed on hot substrate followed by sintering in order to deposit a film. & Electrolyte & Thin and impermeable electrolytes, gradient layer can be produced by changing the solution & [12,103,115] \\ \hline
**Colloidal sprayed** & A colloidal solution is pumped to liquid dispersing apparatus, like an ultrasonic nozzle on hot substrate. & Electrolyte and cathode & Low cathode ASR(area specific resistance), increasing in power density. & [12] \\ \hline
**Chemical vapor** & Deposition takes place by gas pressure reaction between metal & Cathode and & Electrolyte thin film Low deposition, high temperatures needed, high apparatus costs, corrosive products. & [12,116] \\
**position (CVD)** & halide precursors and not substrate. & Electrolyte & High apparatus costs, corrosive products. & [12,116] \\ \hline  & Metal chloride vapors and water vapor or oxygen are placed on either side of the substrate in a chamber. Due to reaction & Dense film can be deposited on porous substrate; can be used for tubular substrate, homogeneous films having good & [12,103] \\
**vaported position** (**EVD)** & between the metal chloride and water vapor, closure of pores takes place and then form their density takes place due to interconnect & Interconnect & temperature, High SOIC’s cost, high temperature needed for rapid deposition & [12,103] \\  & formation of an electrochemical potential gradient & & & \\ \hline  & Film can be produced by spinning a soil gel precursor on porous or dense substrate. The thickness of the film can be controlled by stir rate & Electrolyte & Dense and thin electrolyte can be obtained & [12,103,114] \\ \hline
**Spin coating** &
\begin{tabular}{c} The substrate is dipped in an alcoholic or aqueous or \\ suspension which is then dried at room temperature. After \\ that it is repeated his is then followed by sintering. The \\ procedure is repeated again and again \\ \end{tabular} & & Electrolyte, anode and cathode & & \\ \hline
**Tape calendaring** & It is analogous to tape casting, but spacing between rollers is used to control the thickness. The electrical vaporisation is a thermoplastic material. & & Electrolyte with varying thickness is possible, multilayer cells can be produced. & [12,103,114] \\ \hline
**Sputtering** &
\begin{tabular}{c} Noble gas ions usually argon ions are used to bombard the \\ target material. After that, atoms or ions of the targeted \\ material are released and deposited on the substrate. \\ \end{tabular} & & Electrolyte, anode and cathode & & \\ \hline \hline \end{tabular}
\end{table} 
Table 4: A brief description of different deposition techniques [111].