## 3 Experimental  
The experiments were initially conducted using a 100 mm wafer polisher (Poli-400, GnP Technology, Korea) and then scaled-up using a 300 mm wafer polisher (Poli-762, GnP Technology) with the same recipe.  
The 4 cm \(\times\) 4 cm plasma-enhanced tetraethyl orthosilicate (PE-TEOS) coupon wafers and 300 mm PE-TEOS wafers were polished with a commercial colloidal silica slurry with a mean abrasive size of 121 nm. The pH and mass concentration of the slurry were 11 and 16 wt%, respectively. The single-abrasive scenario of an oxide film polished with a silica slurry is depicted in Figure 1. When one silica particle scratches the oxide surface, the compressive stress causes dissolution of SiO\({}_{2}\) at the contact spot [31; 32; 33; 34; 35]. The diffusion coefficient of water increased exponentially with the tensile stress [32; 36]. Next, the siloxane bonds (Si-O-Si) of the particle and oxide film were broken by hydroxyl groups and formed hydrated silica surfaces. After adsorbing hydroxyl ions, silicon atoms were dissolved  
\begin{table}
\begin{tabular}{c c} \hline \hline
**Model** & **Discretization** \\ \hline P-V Coupling & Coupled \\ Gradient & Least Squares Cell-Based \\ Pressure & PRESTO \\ Momentum & Second Order Upwind \\ Motion & Sliding Mesh \\ Viscous & Laminar, Realizable k = \(\varepsilon\) \\ (Standard wall function) \\ \hline \hline \end{tabular}
\end{table}
Table 1: Fluid simulation settings.  
\begin{table}
\begin{tabular}{c c c c} \hline \hline
**Parameter** & **Method** & **Value** & **Unit** \\ \hline Density & Constant & \(1110\) & kg/m\({}^{3}\) \\ Mass Diffusivity & Constant & \(1\times 10^{-9}\) & m\({}^{2}\)/s \\ Dynamic Viscosity & Constant & \(8.9\times 10^{-4}\) & kg/m\(\cdot\)s \\ \hline \hline \end{tabular}
\end{table}
Table 2: Slurry simulation settings.  
Figure 6: **(a)** Dimensions of the wafer and pad used in the polishing process, and **(b)** the rotation direction and five monitoring points in the pad–wafer interface.  
with silicon ions Si(OH)\({}_{4}\) and OH- [35; 36], and the slurry abraded the hydrolytic surface. Three kinds of pads were used in the 300 mm wafer polisher: a concentric groove pad (R0) and two radial groove pads (R8, R32). The polishing pressure and rotation speed of the platen/head were set to 21 kPa and 93/87 rpm, respectively, and the slurry flow rate was set to 160 mL/min. The rotation speed of the conditioning disk was 101 rpm.  
Before experiments, the new pad break-in was conducted with ex situ pre-conditioning for 30 min with deionized water (DIW) and ex situ preconditioning for 20 min with the slurry. Next, two dummy wafers and three experimental wafers were polished with in situ conditioning. The polishing processes used for the 100 mm and 300 mm wafer polishers are shown in Figure 6. A 30 s or 60 s pre-conditioning period was carried out with DIW, then a polishing period with DIW (30 s or 80 s) was carried out until the coefficient of friction (COF) curve converged. Finally, an additional period (30 s or 70 s) of polishing with silica slurry continued until the COF curve converged again. The experiments were repeated four times to obtain a universal law. The real-time COF was measured using the integrated monitoring system (CMP-Eye) in the polisher [37]. COF data post-processing was performed to smooth the curve.  
The MRR and NU of the 300 mm wafers were only checked to verify the practical application of the simulation model in a real manufacturing process. The film thickness was measured before and after polishing using a reflectometer (ST5030-SL, K-Mac, Republic of Korea). In the measurement, 50 points on the same line of the wafers were characterized for the 300 mm wafer.