# A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation
## 1 Introduction
In this paper, experimental results and predictions from the computer simulation (software CrysVUN++) are quantitatively compared to the power versus time profiles of the heaters and qualitatively compared with respect to the shapes of the solid-liquid interface and the growth rate [8]. [PERSON] et al., performed a study on computer-assisted growth of low-EPD GaAs with a 3\({}^{\prime\prime}\) diameter using the vertical gradient freeze technique. In this study, the research team grew 3\({}^{\prime\prime}\), silicon-doped GaAs crystals with low dislocation density using the vertical gradient freeze (VGF) method [9]. [PERSON] et al., present an overview of the current state of gallium arsenide-based solar cells. This review summarizes past, present, and future uses of GaAs photovoltaic cells. It examines advances in their development and performance and various current implementations and modifications [10]. [PERSON] performed a study on the electrochemical synthesis of silicon and gallium arsenide photovoltaic thin films, presenting a critical review and a novel approach. Firstly, this paper presents an overview of results that have arisen worldwide on semi-conductive thin films used in photovoltaic (PV) cells as a function of time and efficiency. Secondly, the paper demonstrates the electrodeposition of silicon and gallium arsenide films suggested for PV cells, with a focus on electrodeposition from ionic liquids [11]. [PERSON] et al., carried out research on accelerated VGF-crystal growth of GaAs under traveling magnetic fields. The aim of this study was to derive a method for the prediction of electromagnetic parameters of TMF, such as frequency, phase shift, and AC amplitude, that provide maximal improvement of interface deflection towards convex morphology during fast growth [12]. [PERSON] et al., conducted a study on the influence of the scatter of heat flux at the m/c interface on the frequency of appearance of poly-body and twin defects during 6\({}^{\prime\prime}\) semi-insulating GaAs crystal growth using the VGF method. In this study, numerical simulation using the transient two-dimensional mathematical model of GaAs crystal growth was performed [13]. [PERSON] et al., performed a study on Mn's contribution to the valence band of Ga/Mn/Sb. The contribution of the Mn 3d states to the valence band of Ga\({}_{0.98}\)Mn\({}_{0.02}\)Sb, an important factor determining the properties of this system, including the mechanism responsible for the magnetic characteristics, has been revealed by photoelectron spectroscopy [14]. [PERSON] et al., carried out a study on large-depth defect profiling in GaAs wafers after saw cutting. It was concluded from the positron lifetime measurements and from the Doppler-broadening parameters as well as from the annealing behavior, that small vacancy aggregates consisting of at least two vacancies are created by the sawing procedure [15]. [PERSON] et al., performed research on optical properties and scintillation performance of emerging Ga\({}_{2}\)O\({}_{3}\): crystal growth, emission mechanisms, and doping strategies [16]. Many research works on the crystal growth of GaAs ingot were performed. However, little research work has been carried out to design a numerical analysis of heaters for ingot. Therefore, the heater for a GaAs ingot was designed in this study. This study would like to improve the problem of twin and poly occurrence increase in the 4-inch vertical gradient freeze (VGF) ingot process by analyzing precedent studies. The growth of GaAs conducted by the VGF method needs uniform temperature control inside the heater as an essential factor, and the defect rate caused by temperature gradient and the ingot's growth rate increases more than twice compared to the 2-3 inch. For the 4-inch process, the defect rate increases because the control is more difficult to be even temperature at the solid-liquid phase interface as the wafer size becomes larger. Therefore, the development of ingot technologies was performed to improve these problems in this work.