By using direct bonding of III-V active layers, III-V/Si hybrid lasers that have III-V active regions optically connected to Si waveguides have been demonstrated [36; 37; 38]. In addition, micro-transfer-printing has attracted attention as a promising means to integrate III-V optical devices on Si-photonics components [19; 39; 40; 41]. This is because it enables the manipulation of micron-size III-V layer coupons on a donor III-V substrate, and the substrate can be used repeatedly. With these bonding techniques, III-V/Si hybrid PICs have been demonstrated and the directly bonded III-V lasers exhibit sufficient optical output power as a continuous wave light source for Si-photonics modulators. As transmitters for data-center application, however, the footprint and power consumption of DMLs on a Si substrate should be further improved. This is due to a lack of epitaxial regrowth in III-V/Si bonding; an InGaAs/InP or InGaAsP/InP buried-heterostructure (BH) fabricated by epitaxial regrowth of InP is essential for reliable, low-power-consumption DMLs because a BH enables high optical- and carrier-confinement into the active region [42; 43]. Consequently, direct bonding of III-V membrane layers on a Si substrate followed by epitaxial regrowth of InP-based material is an effective technique [44; 45; 46; 47; 48; 49; 50; 51; 52]. This technique overcomes the problems with direct epitaxial growth and bonding techniques. In termsof epitaxial growth, a III-V membrane layer on Si as an epitaxial template prevents lattice mismatching and APBs. Regarding device fabrication, the capability of epitaxial growth on Si offers high flexibility of the III-V device design. In particular, it enables the integration of different III-V mediums on the same plane such as BHs, butt-joint (BJ) structures [15; 53], and multi-wavelength gain structures. However, most studies suffered from the strain induced by the mismatch of the CTE, and threading dislocation densities (TDDs) of epitaxial layers are not as low as those of a standard InP substrate (<1 \(\times\) 10\({}^{4}\)/cm\({}^{2}\)). This is because the thickness of the total III-V layer after regrowth is thicker than the critical thickness, which is determined by the product of temperature change and mismatch of CTE between Si and InP. It is calculated to be \(\sim\)430 nm when we assume the bonding temperature and epitaxial growth temperature are 200 and 600 \({}^{\circ}\)C, respectively [46; 54], which is much thinner than the total thickness of typical InP-based lasers with vertical _p-i-n_ structure for electrical pumping. In this context, we developed an epitaxial growth technique that uses an InP membrane layer formed on a Si substrate for lateral _p-n_ or _p-i-n_ membrane structure. Since we keep the total III-V thickness less than the critical thickness determined by the thermal strain throughout the process, a superior-quality III-V epitaxial layer that has a TDD as low as the standard InP substrate can be achieved. In this paper, we discuss the evaluations on epitaxial growth technique and lasers fabricated using a III-V membrane on a Si-based substrate. Section 2 first describes our integration procedure to obtain high-quality III-V membrane photonic devices on a Si substrate. After discussing the critical thickness of the III-V membrane on a Si substrate at the epitaxial growth temperature, the crystal quality of epitaxial grown InP and InGaAs is evaluated in detail. Section 3 provides the detailed characteristics of membrane lasers, including an InGaAsDML array on Si fabricated using epitaxial grown MQWs on an InP-on-insulator substrate. In addition, recent efforts to integrate multi-bandgap III-V photonic devices using epitaxial growth on the Si-photonics platform, such as a wide-wavelength-range laser array and InGaAsP-MZM integrated with a DFB laser, are reported.