## 6 Future Work  
This paper presents the results of the first milestones reached under the framework of the research project entitled \"Class E Amplifier with Gallium Nitride Transistors for Wireless Power Transfer Applications\", which aims to respond to the following research question: how to design a class E PA using transistors made of Gallium Nitride (GAN), ensuring high efficiency when the load is a standard inductive link for charging mobile phones? In future work, we will expand the proposed methodology with more analytical expressions that are related to the maximum rating constraints of the amplifier components, such as the RMS value of the feed inductance current. Furthermore, we will explore a specific tuning process to guarantee ZVS and ZVDS operation of the amplifier when its load is an inductive link and its switch is implemented by a CMOS or a GAN device.  
The following are available online at [[http://www.mdpi.com/2076-3417/10/24/8765/s1](http://www.mdpi.com/2076-3417/10/24/8765/s1)]([http://www.mdpi.com/2076-3417/10/24/8765/s1](http://www.mdpi.com/2076-3417/10/24/8765/s1)), readme.txt: General instructions of the support tools, ApproachA.mw: Code of \"Approach A\" developed in the tutorial, ApproachB.mw: Code of \"Approach B\" developed in the tutorial, BasicCode.mw: Template with the basic steps to develop a new design of the Class-E amplifier with FDI, TutorialMaple.pptx: Presentation of the model equations and the step by step to develop a Class-E PA design with MAPLE(tm).  
Conceptualization, all authors; methodology, all authors; supervision, A.F.; writing, original draft preparation, all authors; writing-review and editing, all authors; visualization, I.C. and A.F. All authors read and agreed to this version of the manuscript.  
This research was funded by Pontificia Universidad Javeriana through two research projects, which were titled \"Class E Amplifier with Gallium Nitride Transistors for Wireless Power Transfer Applications\" and \"Class-E power amplifier as an electromagnetic interference source under soft and forced switching operation\". They are identified with IDs 20066 and 09376, respectively.  
The authors would like to thank the Electronics Department and the Electronics laboratory of the Pontificia Universidad Javeriana, for providing the required resources to conduct this study. This research was supported by Pontificia Universidad Javeriana through two research projects, which were titled \"Class E Amplifier with Gallium Nitride Transistors for Wireless Power Transfer Applications\" and \"Class-E power amplifier as an  
\begin{table}
\begin{tabular}{c c c c c} \hline \hline
**Study case** & **Parameter** & **Model** & **Simulated** & **APE \({}^{*}\)** \\ \hline \multirow{4}{*}{1} & \(P_{in}\) [W] & 50.28 & 51.36 & 2.14 \\  & \(P_{out}\) [W] & 50.28 & 50.82 & 1.08 \\  & \(\eta\) & 1.00 & 0.99 & 1.04 \\ \hline \multirow{4}{*}{2} & \(P_{in}\) [W] & 1.00 & 1.00 & 0.13 \\  & \(P_{out}\) [W] & 1.00 & 0.99 & 0.78 \\  & \(\eta\) & 1.00 & 0.99 & 0.65 \\ \hline \multirow{4}{*}{3} & \(P_{in}\) [W] & 8.00 & 8.95 & 11.89 \\  & \(P_{out}\) [W] & 8.00 & 8.87 & 10.83 \\  & \(\eta\) & 1.00 & 0.99 & 0.95 \\  & \(C_{p}\) & 0.1082 & 0.10705 & 1.06 \\ \hline \multirow{4}{*}{4} & \(P_{in}\) [W] & 6.00 & 6.31 & 5.20 \\  & \(P_{out}\) [W] & 6.00 & 6.28 & 4.69 \\ \cline{1-1}  & \(\eta\) & 1.00 & 1.00 & 0.49 \\ \cline{1-1}  & \(I_{RMS_{SW}}\) [A] & 1.38 & 1.39 & 1.16 \\ \hline \hline \end{tabular} \({}^{*}\)APE = \(\frac{|Model-Simulated|}{Model}:100\).  
\end{table}
Table 9: Design results.  
electromagnetic interference source under soft and forced switching operation \". They are identified with IDs 20066 and 09376, respectively. Moreover, the authors would like to thank Professor [PERSON] from the Universidad Federal de Santa Catarina in Florianapolis (Brazil), for the fruitful discussions during the design methodology conception.  
**Conflicts of Interest**: The authors declare no conflict of interest.