## 3 Results (A Comparison of the Theoretical and Experimental Results)
A comparison of the theoretical and experimental values of relaxer parameters in the natural phlogopite \(\mathrm{KMg}_{3}(\mathrm{AlSi}_{3}\mathrm{O}_{10})(\mathrm{OH})_{2}\) shows that, at temperatures of 178 K and 206 K (Figure 1[1,4]), where structural defects associated with the relaxation of structural and adsorbed water molecules, respectively, are activated, the theoretical activation energy is 0.01 eV higher than the experimental one, and at temperatures of maxima 235 K (Figure 1) and 260, the theoretical values of activation energy fall within the confidence interval of measurements (Table 1). At low temperatures, there is a significant discrepancy between the experiment and the results of calculations: at the temperature of 130 K (Figure 1) in the experiment, the ions H\({}_{3}\)O\({}^{+}\) relaxes with an activation energy 0.17 \(\pm\) 0.02 eV, and according to the calculation results U\({}_{0}=0.18\) eV, in the vicinity of the maximum associated with the tunneling transitions of protons between layers of water molecules and ions \(\mathrm{SiO}_{4}^{+}\), the measured activation energy is equal to 0.05 \(\pm\) 0.01 eV, and the calculated energy is 0.08 eV. In addition, in the vicinity of low-temperature maxima, the theoretical values of the equilibrium concentration are two orders of magnitude lower than the experimental ones [1,4]. For natural mineral onot \(\mathrm{talc}\mathrm{Mg}_{3}(\mathrm{Si}_{4}\mathrm{O}_{10})(\mathrm{OH})_{2}\), the TSDC maxima were observed at temperatures of 86 K, 112 K, 180 K, 206 K, 230 K, 251 K, 305 K (Figure 2) [1,4]. According to Tables 1 and 2, a more rigorous account of proton tunneling brought the calculated values of activation energy closer to the measured values for low-temperature Bjerrum ionization defects H\({}_{3}\)O\({}^{+}\), which are responsible for the monorelaxation maximum of the TSDC density at a temperature of 130 K (Table 1) in the natural phlogopite \(\mathrm{KMg_{3}(AlSi_{3}O_{10})(OH)}_{2}\) and at the temperature of 112 K in onot talc (Table 2) \(\mathrm{Mg_{3}(Si_{4}O_{10})(OH)}_{2}\). Phlogopite structure \(\mathrm{KMg_{3}(AlSi_{3}O_{10})(OH)}_{2}\) is characterized by the fact that the distance between the layers \(\mathrm{SiO_{4}^{4-}}\) does not exceed 1.8 A; that is, it is no more than the length of the hydrogen bridge [1]. Therefore, according to the calculation results (Table 1), we can assume two possibilities for the diffusion of defects in \(\mathrm{H_{3}O^{+}}\):  
1. Ion migration \(\mathrm{H_{3}O^{+}}\) along the water layer and between \(\mathrm{H_{2}O}\) molecules of neighboring layers;
2. Ion migration \(\mathrm{H_{3}O^{+}}\) between a layer of water molecules and a layer of ions \(\mathrm{SiO_{4}^{4-}}\). In phlogopite crystals, two layers of anionic groups \(\mathrm{SiO_{4}^{4-}}\), associated with aluminum ions form two layers oriented perpendicular to the crystalline axis C. There are molecules in some of the potassium nests while, in some interpacket zones, there are continuous monomolecular water layers. Considering the dense packing of the layers, it is possible to allow for the electron shells of oxygen ions belonging to anions \(\mathrm{SiO_{4}^{4-}}\) and neighboring water molecules to overlap. As a result, both the tunneling and over-barrier transitions of the proton from the \(\mathrm{H_{3}O^{+}}\) ion, formed in the water layer near the \(\mathrm{SiO_{4}^{4-}}\) anion, are facilitated.