## 5 Conclusions  
The research described in this paper has shown key outcomes critical to the development of unique electrically conductive N-UNCD films to enable a new generation of transformational electrodes for a new generation of Li-ion batteries with orders of magnitude superior stable capacitive energy vs. charge/discharge cycles and safer than current commercial LIBs. Key results from the research are: (1) XRD analysis demonstrated that N-UNCD films are formed by grains with diamond crystalline structure without any graphite impurity phase; (2) Cross-section SEM imaging of N-UNCD films showed that the film thickness decreases as a function of growth pressure, which can correlate with a reduction in arrival of C2 dimers and CHx radical-growth species at the substrate surface, due to collision with other molecules and atoms in the plasma, and reduction in plasma area; (3) XPS analysis revealed the presence of C 1s peak characteristic of diamond, correlating with the XRD data, and the presence of the N 1s peak, indicating the presence of N atoms in the films; (4) Raman analysis revealed a characteristic G band (1550 cm\({}^{-1}\)) peak, attributed to sp2 carbon bonds, and a D band (1350 cm\({}^{-1}\) ) peak attributed to disorder-induced sp2 carbon bonds in grain boundaries; in addition, bands at 1450 cm\({}^{-1}\) and 1130 cm\({}^{-1}\), correspond to C=C and C-H bonds in transpoliaceteliene (TPA) molecules, respectively, The intensity of the TPA peaks (1130 and 1450 cm\({}^{-1}\) ), in the Raman spectra of the N-UNCD films, decreased as the total pressure and microwave power increased during film growth, indicating that the grain boundary chemistry of the N-UNCD films presents more sp2 bonded carbon atoms and less TPA bonds, with increasing total pressure and microwave power, resulting from higher incorporation of N atoms, in the grain boundaries, inducing C-N atoms bonding comping with TPA molecular bonds; (5) the electrical conductivity of the N-UNCD films increases as the microwave power and total plasma pressure increases, during the films' growth, resulting in a maximum electrical conductivity for the N-UNCD film grown with a total pressure of 100 mbar and microwave power of 4500 W, due to N atoms increased incorporation in the N-UNCD films' grain boundaries, leading to increased electron release upon C-N atoms chemical reactions. It is considered that a better conductivity could occur when the pressure increases more, as long as the deposition rate does not decrease; however, the source that we use for this experiment is limited to a value of 100 mbar and 4500 W, so that right now we are looking for a most powerful source to be able to demonstrate this.  
Conceptualization, M.S.-M. and R.G.-G.; Data curation, P.T.-C. and E.E.M.-V.; Formal analysis, M.S.-M.; Funding acquisition, G.M.-R.; Investigation, M.S.-M., G.M.-R., P.T.-C., E.E.M.-V. and R.G.-G.; Methodology, P.T.-C. and R.G.-G.; Project administration, M.S.-M.; Resources, M.S.-M. and G.M.-R.; Validation, G.M.-R., E.M.-V. and R.G.-G.; Writing--original draft, M.S.-M. and G.M.-R.; Writing--review and editing, R.G.-G. All authors have read and agreed to the published version of the manuscript. This publication was funded by a 2021 CONACYT (Consejo Nacional de Ciencia y Tecnologia--Mexico) Project number 316058. Institutional Review Board Statement: Not applicable. Informed Consent Statement: Not applicable. Data Availability Statement: Not applicable.  
**Acknowledgments:** The authors acknowledge to CIDESI for the donation of wafers.  
**Conflicts of Interest:** The authors declare no conflict of interest.