## 3 Results and Discussion
Figure 4: The variation in effective atomic numbers (\(Z_{q\overline{q}}\)) of Ag-dopant BiPbSrCaCuO superconductor samples versus the photon energy. Figure 5: The variation in radiation protection efficiency (RPE) of Ag-dopant BiPbSrCaCuO superconductor samples versus the photon energy. The theoretical (\(K_{T}\)) and simulation (\(K_{EGS4}\)) kerma coefficients values for the samples and the seven elements are given in Table 7 for energies from 59.5 to 1332 keV. The gamma kerma coefficients (gy\(\cdot\)cm\({}^{2}\)/photon) of the seven elements that make up the superconductors in the wide energy range between 1 keV and 100 MeV are given in Figure 7 as a function of photon energy. It is seen in Figure 7 that the kerma coefficients of the elements increase as the atomic number and photon energy increase. The dominance of different processes of gamma ray interaction also plays a role in determining the kerma coefficients. At low energies, where the photoelectric effect is dominant, the kerma coefficients increase with increasing atomic number because electrons acquire almost no kinetic energy in the interaction. Compton scattering is almost elastic at low photon energies, which contributes to the increase in kerma coefficients. At higher energies, the scattering and pair production processes dominate, leading to higher values of the kerma coefficient. In summary, the Z-dependence of the mass attenuation coefficient, as well as the dominance of different interaction processes, contribute to the alterations in the kerma coefficients with respect to energy. The graph of the changes in gamma kerma coefficients for the BiPbSrCaCuO superconducting ceramic samples is shown in Figure 8. It is clear that the kerma coefficients of the BiPbSrCaCuO superconductors are almost the same for all energies. The behavior of the kerma coefficient curves with respect to gamma-ray energy is determined by the relative contributions of various partial photon interaction processes such as the photoelectric effect, Compton scattering, and pair production. The contribution of each process depends on the photon energy and the atomic number of the absorber material. In the intermediate energy region, as the photon energy increases, the contribution of Compton scattering and pair production increases relative to the photoelectric effect, resulting in a decrease in the kerma coefficient. Figure 6: Fast neutron removal cross-sections of the given superconductor samples. \begin{table}
\begin{tabular}{c c c c c c c c c c c c c c c} \hline \hline \multirow{2}{*}{**Samples**} & \multicolumn{1}{c}{\multirow{2}{*}{**59.54 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**122 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**383 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**511 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**662 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**1274 keV**}} & \multicolumn{1}{c}{\multirow{2}{*}{**1332 keV**}} \\ \cline{2-2} \cline{5-12}  & \multicolumn{2}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} & \multicolumn{1}{c}{**EGS4**} & \multicolumn{1}{c}{**XCOM**} \\ \hline \({}^{8}\)O & 0.31 & 0.31 & 0.47 & 0.46 & 1.89 & 1.81 & 2.45 & 2.43 & 3.03 & 3.12 & 5.40 & 5.45 & 5.92 & 5.63 \\ \({}^{20}\)Ca & 4.52 &