## 3 Result Analysis
Tungsten acts as a metal blocking layer at the bottom of the MA, preventing waves from propagating through it [50]. The blocking capability of EM waves can be understood by skin depth \(\delta=\sqrt{\rho/\pi f\mu}=\sqrt{\rho\lambda/\pi\mu}\), where wavelength is proportional to skin depth. So, a higher skin depth is required to block the larger wavelength [17; 51]. Figure 7 shows the investigation of absorption property for different back layer thicknesses from h1 = 105 to 65, where the absorption is reduced in the near-infrared region with the decrease of the thickness h1. This phenomenon occurs due to the increase in EM transmission. On the other hand, the cross shape is the key resonant element of the MA, and h3 is the thickness of the tungsten cross resonator. As a result, the absorption is influenced by its thickness Figure 8 shows as the thickness (h3) decreases from 68 nm to 34 nm, absorption bandwidth shrinks from 900 nm to 650 nm (from 350 nm-1250 nm to 350 nm-950 nm) in a periodic manner. In terms of peak absorption, it remains almost the same up to h3 = 45 nm. However, when h3 is near 34 nm, peak absorption decreases to 95% from 98%. Figure 6: Design Evaluation of the proposed MA. The cross shape is a key resonant element of the MA, and h3 is the thickness of the tungsten cross resonator. As a result, the absorption is influenced by its thickness. Figure 9 shows the angular stability characteristics of the absorber. Here, \(\theta\) (theta) is angle of oblique incidence. The simulated result shows that the absorber is stable up to \"\(\theta=45\)\". Beyond this, the MA starts to lose its angular stability, and becomes unstable after \"\(\theta=75\)\". The reason behind this is the SiO\({}_{2}\) coating. In Figure 10, it can be seen that  
Figure 8: Effect of the thickness of resonating tungsten layer. Figure 7: Effect of the thickness of the bottom tungsten layer. the critical angle of reflection of SiO\({}_{2}\) is from \"55\({}^{\circ}\)\" in the infrared optical spectrum [36]. As a result, the incident light starts to reflect in the incident medium causing the MA to lose its absorption capacity. As a result, the MA becomes angular-unstable after \"\(\theta=55^{\circ}\)\". This represents a research opportunity for future studies. Figure 11 illustrates the polarization independency of the proposed MA. It can be seen that the MA is polarization independent for the range \"phi = 0\({}^{\circ}\)\" to \"phi = 90\({}^{\circ}\)\". There is a little change in absorption curve from \"phi = 75\({}^{\circ}\)\" to \"phi = 90\({}^{\circ}\)\". However, it does not affect the overall absorption bandwidth of the MA. Figure 10: Critical angle of reflection of SiO\({}_{2}\)[36]. Figure 9: Angular-stability characteristics of the absorber. To demonstrate the anti-reflection effect of SiO\({}_{2}\), the absorption spectrum of the MA was examined in three different component setups. Figure 12a illustrates the average absorption of three-component setups. It can be seen that the structure without any anti-reflection layer has the lowest average absorption of 88%. At the same time, the structure with a partial anti-reflection layer bears a comparatively better average absorption of 90%. However, the greatest average absorption of 93% was achieved by the structure with a complete SiO\({}_{2}\) anti-reflection layer. Figure 12b illustrates the overall absorption of three-component setups with their corresponding structures. A comparison of SiO\({}_{2}\) at various thicknesses is shown in Figure 3:0 It is clear that the thickness of the SiO\({}_{2}\) has an impact on the MA's absorption capacity. The absorption bandwidth increases with increases in SiO\({}_{2}\) thickness, while average peak absorption falls. If the thickness decreases, the opposite occurs. A thin SiO\({}_  
The electric and magnetic fields (EF and HF) are discussed below to understand the proposed MA's absorption mechanism better. Figures 14a-f and 15a-f show that the EM field is intensified at some regions of the MA peak absorption point wavelength.