## 1 Introduction  
The development of semiconductor processing has been dictated by Moore's law over the past 50 years, and the size of a typical metal-oxide-semiconductor field-effect transistor (MOSFET) device will be reduced to 2 nm by EUV photolithography by 2024 [1, 2]. To be precise, the term \"2 nanometer\" is not associated with the precise physical feature of a typical transistor, but is a commercial term utilized by the chip manufacturing industry based on transistor density, operational speed, and power consumption [3]. As the device size decreases, MOS devices with multi-gate structures are increasingly employed for integrated circuits, including FinFET [4], gate-all-around (GAA) [5, 6], and nanosheet-based three-dimensional devices [7, 8]. Additionally, various semiconductor materials have been utilized for high-performance semiconductor devices, including high-k hafnium oxide and 2D semiconductor materials [9, 10], etc. Metrology techniques to measure film thickness in a few nanometers, as well as profiling film materials with precise spatial resolution, are highly desirable in the semiconductor fabrication process. Metrology instruments should be simple to use and accurately calibrated for in-line semiconductor production processes on a nanometer scale with high levels of precision and reliability. The three-dimensional structures of a semiconductor device can be measured using a variety of existing metrology techniques, including 3D optical profilometry, atomic force microscopy (AFM), and scanning electron microscopy (SEM) [11; 12; 13; 14; 15; 16]. For the surface chemistry of a material film, various techniques have been widely used for academic applications, including Fourier transfer infrared spectroscopy (FT-IR) to measure the chemical bonds of surface molecules and ellipsometry for the investigation of surface optical properties. Most of the analytical techniques are performed over a large area of the film, and local material information on the film is very challenging to gather with a thickness on the order of several nanometers, requiring very surface-sensitive techniques with mapping analysis capability. Auger electron microscopy (AES) and X-ray photoelectron spectroscopy (XPS) are ideal candidate metrology techniques for semiconductor processing [17; 18; 19]. Auger electron microscopy (AES) is performed by bombarding a sample surface with a precisely focused electron beam, which induces the emission of secondary electrons and Auger electrons from the sample surface. Then, an Auger analyzer is utilized to measure the exact mass and intensity of the Auger electron peaks, and the exact identity of an element or molecular fragments can be verified. For X-ray photoelectron spectroscopy (XPS), the sample surface is exposed to a focused X-ray beam with a particular wavelength, the kinetic energies of the emitted electrons are measured, and the electron binding energy of each emitted electron is determined using the photoelectric effect equation. AES can achieve a spatial resolution of up to 7 nm, while XPS can achieve spatial resolution of as small as 5 microns, which is quite suitable to analyze an extraordinarily thin film in a two-dimensional (2D) and three-dimensional (3D) manner [18]. However, the transition of the AES and XPS techniques into a metrology platform for the semiconductor fabrication process is not an easy task, and a high-quality calibration sample should be fabricated with high uniformity. Self-assembled monolayer (SAM) based micro and nanostructures could be ideal devices to evaluate advanced semiconductor fabrication and characterization equipment for the AES and XPS techniques. A SAM film is a highly ordered molecular assembly formed by a spontaneous chemical reaction between a SAM precursor and the solid surface underneath [20; 21]. The SAM precursor is composed of three components: a head group, a carbon chain skeleton, and a tail group.