# Flexible Simulation Platform for Generating Realistic Waveforms with Voltage Notches
## 5 Comparison of Simulations with Field Measurements
### Quantitative Validation
* Commutation reactance \(X_{com}\): calculated with \(\alpha_{max}\) = 84.5\({}^{\circ}\) and \(d_{com,max}\) = 0.4. * Commutation reactance \(Q_{cb}\): varied in fixed steps of 10 kVA from 50 kVA to 140 kVA, according to the required \(PF\) correction. A total of 164 simulations are performed using these conditions, with the same sampling frequency (20.48 kHz) for comparable results, and the set of features is extracted. In Figure 19, a matrix of scatter plots and histograms comparing features from field measurements and simulations is presented. Strong similarities in distributions and ranges of features between measurements and simulations are observed. Notably, \(POW_{com}\) and \(I_{1}\) distributions are very similar, as expected due to the use of comparable value combinations. The \(d_{com}\) distributions are consistent, with almost identical ranges. While the \(\Delta t_{com}\) range for simulations is found to fall within the slightly wider range of field measurements, its computation is noted to be affected by waveform resolution. Differences in \(\Delta t_{com}\) could be attributed to variations in network impedance or to unmodeled elements, such as parasitic inductances and capacitances, in the actual system. These factors can affect the commutation time and, consequently, the width of the notches observed in the field measurements. Despite a slight phase shift, the fundamental current phase angle distributions appear similar. This slight phase shift could be due to differences in background harmonic distortion or unmodeled reactive power compensation devices in the field measurements. The simulation model assumes certain levels of background distortion and may not fully  
Figure 18: Histograms of features extracted from field measurements. capture the exact conditions present in the real-world system. Finally, strong similarities in \(I_{5}\) distributions are observed, largely dependent on \(I_{1}\) behavior. While the field measurements provided limited variability due to the consistent operating conditions of the rectifier, the simulations effectively replicate the observed voltage notch characteristics. The simulation model captures the essential dependencies between key parameters and the resulting voltage and current features, demonstrating its validity in representing real-world behavior under the given constraints. Statistical measures, including mean and range, for the extracted features are presented in Table 6, along with relative errors. Very low relative errors are observed in the mean of features, with a slightly higher 12.83% in \(\Delta t_{com}\), which can be attributed to waveform resolution and discretization errors. Range relative errors are also found to be reduced, with the highest errors noted in \(\Delta t_{com}\) and the fundamental current phase angle. Figure 20 provides further insight into the relationship between features in both field measurements and simulations. The correlation matrices for measurements (left) and simulations (middle) show similar patterns, indicating that the simulation model captures the interdependence between features well. However, discrepancies are observed in the correlations involving \(d_{com}\) and \(\Delta t_{com}\). Figure 19: Matrix of scatter plots of features from field measurements and simulations. From a technical standpoint, a negative correlation between \(d_{com}\) and \(\Delta t_{com}\) is expected, as the area of the voltage notch should remain approximately constant, implying that deeper notches should have shorter durations. However, field measurements show a weak positive correlation (0.19), whereas simulations indicate a slightly negative correlation (\(-0.05\)). This discrepancy may result from variations in network impedance and unmodeled factors, such as parasitic inductances and capacitances.