## 1 Introduction  
Angular Resolved PhotoElectron Spectroscopy (ARPES) is one of the most powerful techniques for the investigation of the electronic energy levels and momenta (k-vectors) at the surface of a solid material, resulting in detailed characterization of the energy band dispersion and Fermi surface [1]. The Extreme Ultraviolet (EUV) radiation from Synchrotron Radiation Sources (SRS) provides the narrow-bandwidth radiation to measure electron energy levels with excellent resolutions of \(<\)10 meV. The SRS-driven beamline was miniaturized to table-top laser-driven laboratory-size ARPES using UV photons (\(\sim\)6 eV) for remarkable researches in superconducting materials [2; 3]. This was possible by the advent of chirp pulse amplification (CPA) technique [4], generating high-power femtosecond laser pulses [2]. The laser-driven ARPES was then extended to \(\sim\)7 eV UV photons [5] and \(\sim\)10.5 eV in order to increase the electronic momentum space [6; 7; 8]. New Vacuum Ultra-Violet (VUV) sources which use metasurfaces to convert TiS laser pulses to 6 eV [9] and 4.5 eV radiation [10] have been reported but have not yet been used for ARPES. The laser photoelectron spectroscopy can be extended to the time-domain taking advantage of the femtosecond pulse duration of the laser-driver [11] and opening the field of time-resolved ARPES (TR-ARPES) [12; 13; 14; 15; 16]. In this technique, the femtosecond laser pulse is split into two pulses with a beam-splitter. The first pulse (hv\({}_{\text{excitation}}\sim\)1.5 eV in case of Ti: Sapphire laser systems) excites electrons in the sample material. The second pulse is converted--through nonlinear crystals--to UV (typically hv\({}_{\text{probe}}\sim\)6 eV) and probes the sample material by extracting photoelectrons (PE) which are then analyzed in the ARPES. By delaying the UV probe pulse with respect to the Infrared (IR) excitation pulse, one obtains a time sequence of ARPES spectra, which constitute the \"video\" of the electron-motion inside the material. The femtosecond-laser-based TR-ARPES technique was further developed by extending the probe photon energy from UV range to EUV range in order to access the full Brillouin zone of the sample material. This was achieved by converting the laser photons to EUV photons through the High Harmonic Generation (HHG) process [17; 18; 19; 20; 21; 22]. For example, in the Artemis facility [23; 24; 25], an excitation pulse generated by an optical parametric amplifier (OPA), tunable from the near-infrared (NIR) to mid-IR (photon energy from 1 eV to 60 meV), works as pump pulse and a femtosecond HHG-based EUV pulse acts as probe pulse, whose photon energy ranges from 10 eV-100 eV by means of a pulse-preserving monochromator [26; 27]. This new type of facility, incorporating HHG EUV pulses with \(\sim\)20 fs duration (\(\sim\)10 fs optional) and photon energies extending to \(\sim\)100 eV, led to the discovery of several ultra-fast processes in novel materials, such as 2D materials like Graphene, TaS\({}_{2}\), and topological insulators [28; 29; 30]. Several laboratories around the world have developed such EUV beamlines for time-domain research in both materials science and atomic-molecular physics [31; 32; 33; 34; 35; 36; 37; 38; 39]. In this paper, we present the new femtosecond EUV beamline for time-resolved Spin-ARPES, developed for research on ultrafast and spintronic materials. The laser-driven, sec-top beamline is an integral part of the \"Ultrafast Spintronic Materials Facility\" at Nanjing University. This facility stations are dedicated to materials engineering by molecular beam epitaxy (MBE), sputtering and pulsed laser deposition (PLD). The sample material is easily transferred from the materials engineering stations to the TR-Spin-ARPES end-station through a fast and contamination-free ultrahigh vacuum (UHV) transport tube. The facility can provide the in-situ analysis for novel materials, especially for those sensitive materials, in order to reveal their intrinsic properties.