## 1 Introduction  
The high-voltage switch is a core key component in exploding foil initiation systems (EFIs). It can not only control the on-off of the current in the initiation discharge circuit, but also has a high turn-off impedance to reduce the power consumption of the exploding foil initiation system: it is more important to have lower on-resistance and inductive reactance to improve the output characteristics of narrow pulse current. Technical indicators and performance parameters directly affect the overall performance of exploding foil initiation systems (EFIs) [1; 2; 3]. With the continuous development of low-energy exploding foil initiators (LEEFI), high-voltage discharge switches are also constantly updated. Reynolds Company reported the use of a spark-gap gas discharge switch at the 43 rd Annual Meeting of Fuzes in 1999 [4], and the use of an MCT (MOS controlled thyristor) switch was reported at the 45 th Annual Meeting of Fuzes in 2001 [5], [PERSON], [PERSON] and [PERSON] et al. [6] made Schottky barrier diodes into single-trigger high-voltage switches through MEMS technology in 2017. In 2021, [PERSON], [PERSON] et al. [7] reported the spark-gap switch triggered by a parallel plane sealed on a PCB base. The high-voltage discharge switches reported in the data mainly include three-dimensional cold-cathode-triggered gas-spark-gap high-voltage switches and vacuum-triggered high-voltage switches based on metal ceramic packages, based on IGBT (insulated gate bipolar transistor, insulated gate bipolar transistor) and MCT (metal- oxide-semiconductor controlled thyristor MOS control thyristor) semiconductor high-voltage switches, based on micro-electro-mechanical system (MEMS) and other processes, including the plane electric explosion high-voltage switch and the plane spark gap high-voltage switch. The cold cathode-triggered gas spark gap high-voltage switch and the vacuum-triggered high-voltage switch based on the three-dimensional structure of the metal-ceramic package have fast closing speed, high operating temperature, small current leakage, and are little influence by radiation. Because this system has good performance and is favored, it has always dominated. However, because it is a ceramic metal package structure, it has the disadvantages of poor mechanical overload resistance, large volume, and high cost. With the continuous development of semiconductor technology, [PERSON] [8] proposed a metal oxide semiconductor field effect transistor switch (MOSFET) and N-channel MOS control in LEEFI (low energy exploding foil initiator) at the 45 th Fuse Annual Conference in 2001. In 2002, [PERSON] [9] published a design scheme using MCT to control the discharge of high voltage capacitors in a patent. In 2008, Kluge Design Inc (KDI) [10] announced the multiple launch rocket system (MLRS) using LEEFI, indicating that the MCT high voltage switch has achieved engineering applications. In 2016, the U.S. Navy [11] announced a high-voltage switch composed of stacked IGBTs, implemented a discharge test study under short-circuit and load conditions, and planned to use it for live-fire testing at the end of the year. As a typical representative of high-power MOS-controlled semiconductor devices, MCT high-voltage switches have the advantage that conventional MOS gate control signals can be used to control the conduction of the switch, and the pulse current can reach thousands of amperes within 100 nanoseconds, which is suitable for explosion foil ignition with detonation. The on-current of the semiconductor high-voltage switch is large and the working life is long. However, due to its large size, low operating voltage and large leakage current, it is difficult to achieve derating design, resulting in low working reliability and safety of the exploding foil initiation system. In addition, its performance is greatly affected by environmental factors (temperature, electromagnetic, etc.).