## 5 Scientific Novelty and Scientific and Practical Significance of the Research Results
### Influence of High-Order Polarization Harmonics on Dielectric Relaxation
#### 5.9.1 Memory Elements Based on Thin Films of Transition Metal Oxides
At the same time, information technologies require increasingly capacious and high-speed, non-volatile devices with a large memory capacity for recording and storing information and the ability to save it for abnormally long periods of time. Recently, with the sharp increase in attention to neural networks, there has been a growing interest and need for the development of microcircuits for microelectronic devices, which are physical analogs functioning on the basis of the principles and operating patterns of the human brain. Such neuromorphic systems include memristors [158], defined as bipolar devices in which the electrical resistance changes depending on the charge passing through them. These devices retain electrical characteristics that depend on their previous state, which resembles the properties of synapses in biological neural systems [3; 4; 5; 6; 7]. The memristive effect was first experimentally discovered in 2008 in an element with metal-insulator-metal layers Pt-TiO\({}_{2}\)-Ti\({}_{n}\)O\({}_{2n-1}\)-Pt [159]. Studies have shown that this effect is pronounced in nanoscale metal-dielectric-metal structures due to the movement of charges in a very thin dielectric layer under the influence of an electric field, for example, during the movement of oxygen vacancies in a titanium dioxide layer [160]. Further, the resistive switching effect was obtained for various films of metal oxides VO\({}_{2}\), HfO\({}_{2}\), Ta\({}_{2}\)O\({}_{5}\), and Al\({}_{2}\)O\({}_{3}\)[161]. A number of studies have been carried out to develop the technology for producing nanostructured films of ZnO, TiO\({}_{2}\), and tin oxide [162; 163; 164]. The influence of the TiO\({}_{2}\) semiconductor shell on the properties of localized plasmon resonance of silver and gold nanoparticles was studied [164]. The presence of charge transfer in Ag/SiO\({}_{2}\) nanostructures has been demonstrated by luminescent methods [165]. In a number of works, we have studied the influence of the features of ZnO and TiO\({}_{2}\) films on the optical and electrophysical properties of perovskites of the composition CH\({}_{3}\)NH\({}_{3}\)PbI\({}_{3}\) and perovskite solar cells [166; 167; 168]. Despite numerous extensive studies devoted to improving the electrical properties of memristors [165; 166; 167; 168; 169; 170; 171; 172; 173; 174; 175; 176; 177; 178; 179; 180; 181; 182; 183; 184; 185; 186; 187; 183; 188; 189; 190; 191; 192; 193; 194; 195; 196; 197; 198; 199; 200; 203; 204; 205; 206; 207; 208; 209; 211; 209; 211; 212; 222; 233; 241; 243; 244; 25; 256; 267; 278; 289; 292; 301; 329; 33; 341; 35; 368; 379; 38; 393; 40; 41; 42; 43; 44; 45; 46; 47; 48; 49; 51; 50; 52; 53; 54; 55; 56; 57; 58; 59; 61; 62; 63], the main problem for the large-scale use of these devices as memory or neural network elements is instability (lack of repeatability) when switching the memristor from a low-conductivity state to a high-conductivity state and vice versa. This is due to the quantum nature of the diffusion of oxide vacancies in films of transition metal oxides (TMOs) [164; 166; 167; 168; 170]. To reduce the uncertainty in the values of low-conductivity and high-conductivity states, various approaches are proposed. One of the first is the doping of TMO films with aluminum atoms and other impurities in order to reduce the energy required for the formation of oxygen vacancies, the movement of which in an electric field ultimately produces a memristive effect [164; 165]. Another method for controlling the process of forming a conductive channel is suggested in [165], where it is proposed to form a conductive channel using a nanoscale synchrotron X-ray beam. Thus, firstly, thin TMO films are materials on which it is possible to construct functional memristor elements, and secondly, the main process that changes the electrical resistance of TMO films is the movement of oxygen vacancies in an electric field.