# Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review
## 4 Electronic and Transport Properties: Effect of Interactions with the Surroundings
\begin{table}
\begin{tabular}{c c c c c c c c c c} \hline \hline \multirow{2}{*}{**Substrate**} & \multirow{2}{*}{**Growth**} & \multirow{2}{*}{**No. of EG Layers**} & \multirow{2}{*}{**Fem Level,**} & \multirow{2}{*}{**n/p**} & \multirow{2}{*}{**n**} & \multirow{2}{*}{**n**} & \multirow{2}{*}{**n**} & \multirow{2}{*}{**(\(\text{cm}^{-2}\text{)}\)**} & \multirow{2}{*}{**(\(\text{cm}^{-2}\text{)}\)**} & \multirow{2}{*}{**(\(\text{cm}^{-2}\text{)}\)**} & \multirow{2}{*}{**(\(\text{cm}^{-2}\text{)}\)**} \\  & **Process** & & & & & & & & & \\ \hline \multicolumn{11}{c}{**EG-Substrate Interaction**} \\ \hline \multirow{2}{*}{6H-SiC(0001)} & Thermal & \multirow{2}{*}{1} & \multirow{2}{*}{350–500} & \multirow{2}{*}{n} & \multirow{2}{*}{\(10^{13}\)} & \multirow{2}{*}{1000} & \multirow{2}{*}{-} & \multirow{2}{*}{Hall bar} & \multirow{2}{*}{[26, 43]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{6H-SiC(0001)} & Thermal & \multirow{2}{*}{2} & \multirow{2}{*}{300–400} & \multirow{2}{*}{n} & \multirow{2}{*}{\(5\times 10^{12}\)} & \multirow{2}{*}{1000} & \multirow{2}{*}{-} & \multirow{2}{*}{Hall bar} & \multirow{2}{*}{[31, 34]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{6H-4H-SiC(0001)} & Thermal & \multirow{2}{*}{Multi} & \multirow{2}{*}{-} & \multirow{2}{*}{n/p} & \multirow{2}{*}{\(10^{13}\)–\(10^{14}\)} & \multirow{2}{*}{1000-3000} & \multirow{2}{*}{Hall bar} & \multirow{2}{*}{[56]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{6H-4H-SiC(0001)} & Thermal & \multirow{2}{*}{(top)} & \multirow{2}{*}{-} & \multirow{2}{*}{p} & \multirow{2}{*}{\(2\times 10^{13}\)} & \multirow{2}{*}{1500} & \multirow{2}{*}{-} & \multirow{2}{*}{Hall bar} & \multirow{2}{*}{[14]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{4H-SiC(0001)} & Thermal & \multirow{2}{*}{First layer} & \multirow{2}{*}{350} & \multirow{2}{*}{n} & \multirow{2}{*}{\(9\times 10^{12}\)} & \multirow{2}{*}{-1500} & \multirow{2}{*}{-} & \multirow{2}{*}{Optical Hall effect} & \multirow{2}{*}{[72, 73]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{4H-SiC(0001)} & Thermal & \multirow{2}{*}{Multi} & \multirow{2}{*}{-} & \multirow{2}{*}{p} & \multirow{2}{*}{\(10^{12}\)} & \multirow{2}{*}{15,000} & \multirow{2}{*}{-} & \multirow{2}{*}{Hall bar} & \multirow{2}{*}{[15]} \\  & decomposition & & & & & & & \\ \hline \multirow{2}{*}{3C-SiC(100)} & Alloy & \multirow{2}{*}{3-7} & \multirow{2}{*}{450} & \multirow{2}{*}{p} & \multirow{2}{*}{\(3\times 10^{13}\)} & \multirow{2}{*}{\(<\)80} & \multirow{2}{*}{\(\sim\)10k} & \multirow{2}{*}{vdP} & \multirow{2}{*}{[21]} \\  & mediated & & & & & & & \\ \hline \multicolumn{11}{c}{**EG-Ambient Interaction**} \\ \hline \multirow{2}{*}{4H-SiC(0001)} & Thermal & \multirow{2}{*}{1} & \multirow{2}{*}{p} & \multirow{2}{*}{\(10^{12}\)} & \multirow{2}{*}{\(\sim\)1550} & \multirow{2}{*}{-} & \multirow{2}{*}{Optical Hall effect} & \multirow{2}{*}{[74]} \\  & decomposition & & & & & & \\ \hline \multicolumn{11}{c}{**Fine-Tuning of Transport Properties**} \\ \hline \multicolumn{11}{c}{**H-Intercalation**} \\ \hline \multirow{2}{*}{4H-SiC(0001)} & Thermal & \multirow{2}{*}{\(\text{decompection}\)} & \multirow{2}{*}{Quasi-free-standing monolayer} & \multirow{2}{*}{340} & \multirow{2}{*}{\(9\times 10^{12}\)} & \multirow{2}{*}{-} & \multirow{2}{*}{-} & \multirow{2}{*}{ARPES} & \multirow{2}{*}{[75]} \\  & decomposition & & & & & & \\ \hline \hline \end{tabular}
\end{table} 
Table 1: Summary of electronic and transport properties of as-grown epitaxial graphene on SiC(0001), SiC(0001�̄), and 3C-SiC/Si substrates indicating the effect of substrate and ambient and fine-tuning of properties using intercalation, functionalization, and gate control.