## 3 Results (A Comparison of the Theoretical and Experimental Results)
The theoretical values of equilibrium concentrations computed for proton tunneling are also closer to experimental values than those computed for thermal activation only (Tables 1-3). The experimental spectra of thermally stimulated depolarization current density for the chemically pure chalcanthite crystals CuSO\({}_{4}\).5H\({}_{2}\)O were measured with the help of the empirical schemes developed and described in [68] and are presented (depicted) in Figure 4.  
The experimental values of U\({}_{0}\), \(n_{0}\) for chalcanthite crystals were calculated in this paper by famous quasi-empirical methods [1,4] and are shown in Figure 1:0 The theoretical values of U\({}_{0}\), \(n_{0}\) for chalcanthite were calculated based on Equation (22) with the MCF method [69], and are also presented in Figure 1:1  
For chalcanthite crystals, on the basis of the Equation (22), similar results were obtained, and in the region of the low-temperature maximum of the TSDC density (94 K, Graph 1 in Figure 4), due to processes in protonated anions HSO\({}_{4}^{-}\), the theoretical activation energy (U\({}_{0}\) = 0.16 eV) is two times higher than the experimental one (U\({}_{0}\) = 0.07 \(\pm\) 0.01 eV, Table 4), which, taking into account the errors of the quasi-classical theory, falls within the confidence interval of the measured values. According to the results of an X-ray analysis of the crystal structure CuSO\({}_{4}\).5H\({}_{2}\)O, two possibilities for the displacement of H\({}_{3}\)O\({}^{+}\) defects [1] can be proposed:  
1. Ion migration H\({}_{3}\)O\({}^{+}\) along and between adjacent water layers;
2. Ion migration H\({}_{3}\)O\({}^{+}\) between a layer of water and a layer of sulfate ions SO\({}_{4}^{2-}\). Mixed motion is also possible along the layer--between interstitial water molecules and SO\({}_{4}^{2-}\) ions. The results of the quantum mechanical calculation of the relaxer parameters (Table 4) confirm the following Bjerrum defect migration scheme H\({}_{3}\)O\({}^{+}\) (Figure 5):  
1. Defect H\({}_{3}\)O\({}^{+}\) formations are found in the water layer or due to the introduction of proton-donor impurities: Figure 1:2
2. A transition from H\({}_{3}\)O\({}^{+}\) ion to SO\({}_{4}^{2-}\) anion can form a protonated HSO\({}_{4}^{-}\) anion: Figure 1:3
3. A protonated anion can be reoriented due to the transition of protons inside it: Figure 1:44. If a proton undergoes a transition between cells of the anionic sublattice, the newly formed protonated anion acquires the opposite orientation: Figure 1:5 5. Reorientation of the second protonated anion occurs: Figure 1:6 6. The transition of a proton to a water molecule and formation of a defect in H\({}_{3}\)O\({}^{+}\) can occur as follows: Figure 1:7  
A similar mechanism can be applied to study ion migration OH\({}^{-}\); however, in this case, the defect will move in the opposite direction. It should be noted that when the ions H\({}_{3}\)O\({}^{+}\) and OH\({}^{-}\) move along hydrogen bonds under the action of an electric field, their influence on the orientation of water molecules and anions SO\({}_{4}^{2^{-}}\) is the opposite. The contribution of L and D defects and VL(VD) complexes to the electrical conductivity is possible, but very small (as mentioned above). The mechanism of their movement from layer to layer will differ at the initial stage of the formation of orientational defects, since the proton will approach the ion SO\({}_{4}^{2^{-}}\) only after the rotation of the water molecule. H\({}_{3}\)O\({}^{+}\)- conductivity at elevated temperatures could be considered proton conductivity; however, as the experiment showed, protons play only an intermediate role. The Relaxer parameter numerical values (Table 4) obtained for chalcanthite (miner-alogical characteristics of hydrated copper sulfates, along with other aqueous sulfates, such as epsomite MgSO\({}_{4}\cdot\)7H\({}_{2}\)O, melenterite FeSO\({}_{4}\cdot\)7H\({}_{2}\)O, morezonite NiSO\({}_{4}\cdot\)7H\({}_{2}\)O, gypsum CaSO\({}_{4}\cdot\)2H\({}_{2}\)O, etc.