###### Abstract
characteristics of the cells, a bell-shaped video-signal (not rectangular) is formed reflecting the LZ profile uniform in brightness [5]:  
\[V=\frac{4\cdot L\cdot b\cdot l}{T}j_{s}\left[\frac{1}{exp[\alpha(E_{e}-E_{c})]+1} \right]_{0}^{l}+\frac{2\cdot L\cdot b\cdot l_{1}}{T}\left(j_{bc}^{f}+j_{be}^{f} \right)\left[\frac{1}{exp[\alpha(E_{e}-E_{c})]+1}\right]_{x_{1}}^{x_{2}} \tag{1}\]  
where \(L\) is the coefficient depending on the differentiation approach; \(b\) and \(l\) are MS width and length, respectively; \(l_{1}=x_{2}-x_{1}\) is the LZ width; \(\alpha=\frac{1}{l_{0}}=\left(A\frac{kT^{z}}{q}\right)^{-1}\); \(K\) is the Boltzmann constant; \(q\) is the electron charge; \(A\) is the coefficient reflecting the imperfection of the p-n junction of the scanistor structure; \(T^{\circ}\) is the temperature in Kelvin; \(E_{e}=E_{0}\cdot\frac{x_{0}}{l}\) is the emitter potential at the polling point \(x_{0}\); \(E_{0}\) is the constant bias voltage of the emitter; \(E_{c}=E_{0}\cdot\frac{t_{0}}{l}\) is the sawtooth voltage value at polling moment \(t_{0}\); \(T\) is the sawtooth voltage period; \(j_{s}\) is the density of dark saturation current of photodiode cell; \(j_{be}^{f}\) and \(j_{be}^{f}\) are the increment density of saturation currents of the base-collector and base-emitter junctions, respectively, at illumination; and \(x_{1}\) and \(x_{2}\) are the coordinates of LZ beginning and ending on the MS, respectively. The duration of the time interval from the initial sawtooth voltage to the VS maximum is proportional to the distance between the LZ middle and the MS beginning. Due to its dual character, the MS discrete-solid structure has a discrete or analogue shape of a VS depending on the step voltage between photodiode cells. In [5] it is shown that when the step voltage decreases to the value of \(\frac{E_{0}}{N}<4U_{0}\) (where \(E_{0}\)--bias voltage of resistive divider; \(N\)--number of structure cells; \(4U_{0}\)--voltage at the transitional section of I-V characteristics of the cell), the discreteness of the MS structure is not manifested and its output current has an analogue character. In the analogue mode, bell-shaped VSs from neighbouring switching discrete cell overlap each other and the total VS becomes trapezoidal. The condition of the analogue mode is a potential distribution on a solid divider, and any time that the sawtooth voltage is polling, there are no less than two cells in the current-switching state. The first feature of the MS in the analogue mode is high coordinate-dimension sensitivity to the movements of LZs corresponding to the geometric parameters of controlled objects. The analogue mode provides a high accuracy in the measurement of these geometric parameters, namely, coordinates, dimensions, movements, and simultaneously the energy parameters of one or more LZs. The second feature of the MS connected with the analogue mode, is the noise-proofing of MS-based measuring devices in contrast to other photoreceivers of the scanning type, such as charge-coupled devices (CCD) and photodiode matrices (PDM) based on the principle of charge accumulation, which do not allow for registering information from fast-changing light fields. An MS can operate in a wide dynamic range (more than 80 dB) of the intensities of light signals at the frequency range of the intensity variation of more than 100 kHz [12]. MS-based optoelectronic devices provide the specified accuracy in obtaining measurement information in the conditions of strong light noises by brightness modulation of light radiation and subsequent synchronous detection. The third feature of MS in the analogue mode is the change of the VS shape (from a trapezoidal to a bell shape) at the decrease of the width of the uniform-in-brightness LZ (from maximal, which corresponds to the fully illuminated MS, to minimal, when the zone is absent).