## 3 Results  
From a classical hydrosilylation point of view, radicals on the surface do play an important role, being responsible for the formation of covalent linkage with unsaturated carbon to the surface. On the other hand, we decided to utilize a radical-free system forcing the surface reaction to proceed via nucleophilic insertion of the alcohol to the Si-H bond and the subsequent abstraction of the hydrogen as described by [PERSON] et al. [4]. This was deliberately done so to minimize the interference from surface radicals that could influence any physical change on the surface during surface coupling. In order to examine the differences that could arise from the different doping, we decided to perform the same alcohol reaction on highly doped \(n\)- and \(p\)-type silicon as well as on different crystal orientations as shown in Figure 1.  
Figure 1: Illustration of the alcohol reaction to silicon hydrogenated (Si–H) surfaces of different crystal orientations. Firstly, it is important to take into consideration the mobility of \"carriers\" at elevated temperatures (130 \({}^{\circ}\)C/403 K). The process of the electron mobility (especially with regards to \(n\)-type silicon) has already been widely described [19; 20] and it was shown that lattice scattering effects would dominate carriers' behaviour. However, many of the effects described were on the bulk property while our principal focus dealt with effects on the interfacial region of the silicon adatom. Hence, we suspect that we could disregard all Hall effects at this temperature. Between both the \(n\)- and \(p\)-type substrate, the initial mechanism for the formation of Si-O-C bonds on the Si-H surface was relatively similar, occurring via the abstraction of hydrogen in the nucleophilic route [17; 18] with the liberation of hydrogen during the process. However, from the start, the XPS Si2p spectrum on both the \(n\)-type silicon (111) and \(p\)-type silicon (111) showed the formation of Si-O-C bonding but their overall profiles were starkly different. As shown in Figure 2, the Si2p assignment for Si2p\({}_{3/2}\) and Si2p\({}_{1/2}\) at the nominal position of 99-100 eV was found to exhibit relatively different FWHM values with the \(p\)-type silicon, showing broader dual peaks (FWHM = 2.3 nm) (Figure 2a) compared to the \(n\)-type silicon (FWHM = 0.9 nm) (Figure 2b). On the other hand, both spectra showed the emergence of the peak at 102.2-102.5 eV, representative of the Si-O-C linkage to the surface [17; 21; 22]. The differences of peak profile and the changes in the FWHM of the Si2p could be attributed to the distribution of chemically shifted Si2p lines arising from surface roughening as reported previously in literature [23; 24]. In fact, it has been shown that surface roughening does have a major contribution to the overall spatial intensity of the photoelectron [25; 26; 27]. When this comparison was made with the silicon (100) surfaces, the Si-O-C levels were even more profound, especially for the \(p\)-type silicon (100) (Figure 2c) and \(n\)-type silicon (100) (Figure 2d). In fact, there was a notable quenching/lowering of the nominal Si2p\({}_{3/2}\) and Si2p\({}_{1/2}\) at 99-100 eV for both surfaces with a profound peak centering at 101.9-102.1 eV. This may suggest that for both (100) surfaces, alcohol etching was more extensive compared to the (111) surfaces. Figure 2: X-ray photoelectron spectroscopy (XPS) Si2p spectrum of (**a**) \(p\)-type silicon (111); (**b**) \(n\)-type silicon (111); (**c**) \(p\)-type silicon (100) and (**d**) \(n\)-type silicon (100). Note the emergence of the Si–O–C bond centering at -102 eV. In order to understand the exact nature of the roughening, AFM was performed on these surfaces. It was firstly to state that HF treatment on \(p\)-type does not typically generate an atomically flat surface while it was possible to obtain that from \(n\)-type silicon.