In essence, a change in the charge state of SEB acting as a load for the resonant matching network (MN) results in a measurable variation of the characteristics of the MN when probed by the RF reflectometry. There are several important advantages of SEBs over SETs. First, the use of only one junction in the SEB reduces the total device capacitance \(C_{\Sigma}\) and thus increases the charging energy, which increases the maximal operating temperature and sensitivity of the device at \(k_{B}T\)\(<\)\(<\)\(E_{C}\). When designing single electron devices to operate at a desired temperature, the primary constraint is the total island capacitance, \(C_{\Sigma}\). At the same time, to increase voltage gain in the SET, \(G_{V}=-C_{g}/C_{I}\), its gate capacitance needs to be maximized [19]. Therefore, depending on the application, SEBs can be designed to either allocate more of its \"capacitance budget\" to \(C_{g}\) while keeping the same total capacitance \(C_{\Sigma}\) as an SET with two junctions, or to achieve the highest operating temperature by minimizing \(C_{\Sigma}\). Second, since no DC current flows across the junctions, there is no contribution from shot noise, the currently recognized limiting noise of SETs for fast measurements at RF frequencies [20]. Third, the DC path through the SET makes them far more susceptible to electrostatic discharge (ESD) damage. While SETs are notoriously prone to ESD and must be handled with extreme caution, the SEBs we experimentally studied survived tens of thermal cycles and electrical connections and disconnections to various experimental setups. Moreover, components were soldered and de-soldered to the boards with devices already connected, without any noticeable degradation of performance. We will discuss the physical reasons for this below in Section 6. The low admittance of a single SEB represents a major stumbling block for RF probing of these devices. A way to increase the admittance of the sensing single-electron devices while keeping high voltage sensitivity is to have an array of \(N\) devices connected in parallel but with a shared common gate. [PERSON] et al. [21] studied an array of 200 parallel connected SETs. The averaged conductance of the array, at moderately low temperatures, \(T<E_{C}/10k_{B}\), scales as an incoherent sum of sine functions (\(\infty N^{1/2}\)) due to unavoidable random background charges that shift the thresholds of individual devices. Any small variation in gate coupling capacitance \(C_{gi}\) for an \(i\)-th box in the array results in a change of a period of CBO oscillations \(\Delta V_{gi}=e/C_{gi}\), leading to a beating pattern in the transfer function. By optimally biasing the array in a region with constructive interference, giving higher values of slope of the transfer function, \(d|Y|/dV_{g}\), it was estimated that the sensitivity can be increased by a factor of \(\approx 2\) above \(N^{1/2}\)[21]. This, however, is not always practically possible if only one gate is used both for sensing and tuning. In this work we demonstrate how this optimization can be achieved with an extra \"tuning \"gate using arrays of parallel SEBs sharing the common \"sensing\" gate for applications such as a scanning probe, where the surface potential is of interest and a small gate voltage is required to avoid perturbing the sensed object. On top of the three advantageous differences between individual SETs and SEBs listed above, the arrays of SEBs have one other important feature. For an array of SETs the device with the lowest charging energy effectively shunts the array at elevated temperatures and thus this device dictates the array's operating temperature. Additionally, just one shorted SET will lead to the failure of the entire array. By contrast, in an SEB array the lowest charging energy devices will simply contribute less to the sum. Moreover, SEBs with shorted junctions will reduce the number of active devices but not impede the action for the rest of the array.