## 3 Results and Discussion  
The structure diagram of the developed noise-proof optoelectronic device based on MS (MOD) for measuring the geometric parameters of objects is shown in Figure 3 (where Ob--controlled object; MS--multiscan; BMLS--brightness-modulated light source; BVS--bias voltage source; SVG--sawtooth voltage generator; GMP--generator of modulating pulses; CVC--current-voltage converter; BPF--bandpass filter; SD--synchronous detector; LPF--low-pass filter; ADC--analogue-to-digital converter; MP--microprocessor). The MS-based optoelectronic device MOD operates as follows: A parallel beam from the brightness-modulated light source BMLS forms a light zone LZ on the photosensitive multiscan MS surface. The beginning \(x_{1}\) and the end \(x_{2}\) of the zone correspond to the geometric parameters of an object Ob. An intensity-modulated information component of the collector current, separated at the polling of the multiscan MS, is converted into voltage in the current-voltage converter CVC. After filtration by the band-pass filter BPF and demodulation using the synchronous detector SD, the voltage enters the analogue-to-digital converter ADC input and then the microprocessor MP for processing the measurement information. The use of light flux modulation allows for decreasing errors in the measurement of the LZ parameters,  
Figure 2: The change of the shape and amplitude of a video signal with the change of the light zone width. which arise due to the dark current non-uniformity of the MS photodiode cells at weak light fluxes, and also in the case of light noise. The MOD drawback is a decrease in the accuracy of measurements of the parameters of small objects. To provide high-accuracy measurements by the MOD, the linearity of the spatio-temporal conversion of the measurement information about an object Ob is the most important; such a conversion consists of two stages of the photoelectric conversion of the measured dimension (or coordinate) of the object within a time interval. In the first stage, the coordinate of the controlled light zone on the multiscan is converted to the linear coordinate-specifying voltage on the solid resistive dividers \(R^{\prime}-R(N+1)^{\prime}\) and \(R^{\prime\prime}-R(N+1)^{\prime\prime}\) (Figure 1), which provide the MS high sensitivity to the zone movements. The second conversion of the above voltage is performed by a scanning sawtooth polling voltage from the SVG with the use of the volt aperture within a time interval. The general error in the conversion of the LZ coordinate \(x\) within the time interval \(t_{x}\) is determined by the linearity of the coordinate characteristics CC:  
\[x=t_{x}\cdot l/T \tag{2}\]  
At the idealized I-V characteristics of photodiode cells (described by a Heaviside function), a VS from them would have the form of a Dirac delta function; however, due to the limited slope of the transitional section of the I-V characteristics of the cells, the VS is smeared out and acquires a bell shape. The value of the VS smearing-out due to the influence of the volt aperture (at the contact of transition functions) is \(8U_{0}\) and is described by the MS aperture response AR. It should be noted that the most important electrophysical characteristics of the MS are coordinate characteristics CC and aperture response AR. The CC reflects the linearity of the photoelectric transformation of the coordinates of the object image within the VS time intervals at the time-pulse mode of the MS operation. The AR determines the MS ability to reproduce small details of the image. From this point of view, the MS can be characterized by unit resolution, number of resolved lines, and aperture width. At first, television scanistor structures (TSSs) were developed only for televisions [12; 14] as solid-state analogues of television camera tubes, and their main characteristic was aperture response (i.e., the dependence of the depth of the VS modulation on the spatial frequency of the line target).