## 1 Introduction  
Silicon carbide (SiC) is considered one of the most important ceramic materials due to its superior properties, advantages, and wide application in many fields [1, 2]. SiC advantages are wear resistance, good electrical conductivity, high heat transfer capacity, and thermal stability in harsh environments [3]. Therefore, SiC has been used to improve the reliability and the efficiency of many devices used in aircraft, electric cars, and telecommunications [4]. However, the unique properties of SiC make it is difficult to manufacture it without obstacles. Generally, the manufacturing of SiC can be performed using traditional techniques used with most ceramic materials, such as casting, extrusion, pressing, and injection molding [5, 6, 7, 8]. The use of these techniques must be followed with post-processing operations to reach the final product, and the complexity is limited. Additive Manufacturing (AM) can offer highly complex parts with minor post-processing operations [9, 10, 11]. AM is a developing technology that can produce parts from 3D CAD models, as defined by ISO/ASTM 52900 [12]. There are seven techniques of AM, namely, extrusion, binder jetting, material jetting, vat photopolymerization, direct energy deposition, sheet lamination, and powder bed selective laser processing (PBSLP). AM of SiC, using techniques such as binder jetting, extrusion, and material jetting, requires mixing another binder material with SiC powder, which needs to be removed using post-processing operationsthat cause shrinkage. These operations also affect the material properties and increase the production and finishing costs [13; 14]. PBSLP, as shown in Figure 1, is a promising manufacturing technique for the AM of SiC where it can, to some extent, overcome the previously described problems. There are two types of PBSLP: direct and in-direct. Direct-PBSLP (D-PBSLP) means that a laser source selectively sinters a pure material, while indirect-PBSLP means that another material is mixed with the powder acting as a binder and then removed by post-processing operations. The problem with SiC is that it does not have a melting phase, but it starts to decompose at approximately 2800 \({}^{\circ}\)C [15]. For this reason, many authors have focused on indirect-PBSLP [16; 17; 18; 19; 20; 21; 22; 23]. [PERSON] et al. [24] studied the selective laser sintering of reaction-bonded SiC. They mixed SiC powder with silicon (Si) powder and then sintered the mixture using a laser source. The laser source decomposed SiC powder into silicon and carbon. The carbon reacted with the primary silicon powder (liquid) and formed SiC particles. [PERSON] et al. [25] studied the improvement of SiC ceramic parts by the combination of three different processes: Laser Sintering (LS), Cold Isostatic Pressing (CIP), and Reaction Sintering (RS). They could increase the density by 2.1%. [PERSON] et al. [26] optimized the structure of a SiC/Si composite ceramic prepared by SLS. [PERSON] et al. [27] studied the laser micro sintering of Si-SiC powder with different laser powers and focal positions. They were able to produce SiC parts with the remaining Si inside, which is considered a drawback. [PERSON] et al. [28] printed Si/SiC powder using the PBSLP techniques. They used different layer thickness, laser power, and scanning speed and printed different shapes of SiC parts. From the presented literature review, it can be noted that the research rate for PBSLP of SiC is considered low, and almost all the previous studies focused on the indirect PBSLP of SiC where they used a binder material to print SiC. The process parameters (laser power, scanning speed, hatching distance, layer thickness, and scanning strategies) are a key factor for the D-PBSLP of SiC to be successful. Of all the process parameters, the scanning strategy has an essential influence on the successful PBSLP, as reported in many previous studies related to metallic materials [29; 30; 31], and its effects have not been reported yet for the PBSLP of SiC.