## 1 Introduction  
As a third-generation semiconductor material, SiC has excellent chemical and physical properties [1, 2] and widely used in satellite communications, integrated circuits and consumer electronics [3, 4, 5]. However, SiC is characterized by high hardness, high brittleness, and good physical and chemical stability, therefore, it is typically a difficult material to machine [6]. At present, the common method for ultra-smooth processing of SiC is free abrasive chemical mechanical polishing (CMP), which achieves the ultra-smooth, damage-free, and ultra-flat surface processing of the workpiece through acombination of chemical etching of polishing solution and mechanical action of abrasive, and is one of the more effective global flattening processing methods for semiconductor materials [7, 8]. However, CMP has the following disadvantages, low processing efficiency, poor environmental friendliness, poor surface consistency, and poor process engineering controllability [9]. Fixed abrasive chemical machining can effectively avoid the above disadvantages of free abrasive machining and has become one of the emerging technologies in the field of ultra-precision machining [10, 11, 12]. Fixed abrasive tribochemical mechanical polishing is a fixed abrasive chemical-mechanical processing technology, which can use the abrasive and chemical additives in the polishing pad and the surface of the workpiece in a tribochemical reaction to change the surface of the workpiece material and chemical organization. This mechanism achieves the efficient removal of its material; therefore, is the process increasingly gaining the attention of researchers [13]. The core of fixed abrasive tribochemical mechanical polishing is the tribochemical reaction produced on the surface of the workpiece in the polishing process. Therefore, understanding its chemical reaction mechanism is the key to studying its processing mechanism. Usually, there are two kinds of tribochemical reaction, one is the tribochemical reaction in the dry friction state, and the other is the tribochemical reaction in the lubricated state [14]. Tribochemical mechanical polishing does not use apolishing solution containing free abrasive, but instead uses tribochemical mechanical polishing tools. The polishing slurry is trace deionized water, or chemical solution, without adding any free abrasive, its tribochemical reaction is mostly wet tribochemical action, therefore, the workpiece material removal method is mostly tribochemical wear removal [15]. Since the workpiece obtained by this method has the advantages of low residual stress, flatness, and ultra-smoothness without damage, it has gained the attention of a large number of researchers. [PERSON] et al. [16] conducted tribochemical mechanical polishing tests on SiC using abrasive-free oxidants H\({}_{2}\)O\({}_{2}\), CrO\({}_{3}\), and KMnO\({}_{4}\), respectively, and excellent surfaces with surface roughness less than 50 nm and residual stress less than 50 MPa were obtained. [PERSON] et al. [17] proposed the theory of tribochemical wear based on a hydrothermal reaction for SiC and Si\({}_{3}\)N\({}_{4}\) anaerobic ceramics. It is believed that SiC undergoes a tribochemical reaction with water at 120 \({}^{\circ}\)C and a SiO\({}_{2}\) reaction layer is generated on its surface, which achieves ultra-precision machining after the removal of abrasive particles. [PERSON] et al. [18] studied the kinetics of the tribochemical reactions of Si\({}_{3}\)N\({}_{4}\) and SiC under an aqueous environment and analyzed different tribochemical reaction mechanisms during the lapping of Si\({}_{3}\)N\({}_{4}\) and SiC. [PERSON] et al. [19] proposed the wear mechanism of SiC/SiCin water related to the microfracture of the ceramic and the instability of the tribochemical reaction layer.