## 3 Scattering Parameters  
The proposed unit cell design has been simulated and analyzed in commercial electromagnetic high-frequency simulation tool ANSYS HFSS and CST Studio Suite 3D EM simulation and analysis software with master-slave periodic conditions, and the unit cell is excited with Floquet port excitation. We use periodic boundary conditions to analyze the transmitray unit cell scattering parameters and other characteristics. The side walls of the unit cell are realized in master-slave boundary conditions. Floquet-Port 1 (FP1) and Floquet-Port 2 (FP2) are added to the upper and lower boundaries of the air box, and the TE and TM modes of the Floquet port are utilized to simulate X-polarization and Y-polarization of the incident electromagnetic waves, respectively. The transmitray unit cell characteristics and its polarization modulation function can be accomplished by setting the master-slave boundary conditions and adding Floquet ports. The scattering parameters full-wave simulation on normal incident angle present two-phase states scattering parameters as shown in Figure 3a with detailed analysis for incident and radiation angle parameters. Table 2 is less than \(-10\) dB from 14.94 GHz and from 18.01 GHz for state I and state II due to the current symmetric structure. The passive patch reflection coefficient \(\text{Sx}_{i21}x_{r1}\) has \(-10\) dB bandwidth ranging between 14.77 GHz and 17.86 GHz for both state I and  
Figure 3: Electric field distribution (E-field) in different states: (**a**) state I, (**b**) state II. Figure 2: Operating Principle of the Proposed Unit Cell. state II with symmetric reflection losses. The minimum insertion loss is only 0.56 dB at 16.5 GHz with a 1 dB transmission bandwidth \(\mathrm{S}x_{\mathrm{\circ 2}}\),\(y_{\mathrm{\acute{1}}\mathrm{\acute{1}}}\) and is between 14.38 GHz and 17.83 GHz for both state I and state II, with symmetric current characteristics. However, the 3 dB transmission bandwidth \(\mathrm{S}x_{\mathrm{\circ 2}}\),\(y_{\mathrm{\acute{1}}\mathrm{\acute{1}}}\) lies from 14.26 GHz to 18.63 GHz with symmetrical current characteristics to maintain maximum useable bandwidth for both state I and state II illustrate in Figure 4a. The phase difference of 180\({}^{\circ}\) is achieved for both states with a maximum error of 3\({}^{\circ}\) due to symmetric current distribution over the unit cell, as presented in Figure 4b. This phase error is reduced to make a theoretically consistent transmission performance, and the passive patch is rotated by 90 degrees against the active patch. In this way, the current distribution of the total element is symmetric at both states; thus, the transmission curve of both states is almost the same. In the annular gap part of the electromagnetic wave transmitter patch, there is a tunable electronic device (PIN diode) for phase shifting. As a result, to control the switching state of the two diodes on the \"regular hexagonal ring\" patch, the electric field phase can be reversed by 180\({}^{\circ}\), thus achieving a one-bit phase shift. Figure 3b shows the phase variation curves of different channels (diode state changes) with frequency in two states of