## 3 Results
Furthermore, the strongest reflections (Figures 1 and S2c) can be assigned to reflections of d\({}_{(00\text{-}30)}\), d\({}_{(00\text{-}32)}\), d\({}_{(00\text{-}36)}\), d\({}_{(00\text{-}39)}\), and d\({}_{(00\text{-}58)}\), while the weak ones, denoted by w1 and w2, can be assigned to reflections of d\({}_{(00\text{-}31)}\) and d\({}_{(00\text{-}36)}\), respectively (Figure 1). Strong reflections are associated with distances between crystal planes of 3.0217 A, 2.8328 A, 2.3244 A, and 1.5629 A, while the weak ones are associated with 2.9242 A and 2.5181 A, respectively. The observed inconformity in their intensity ratios and their distinct broadening could be attributed to the presence of a second phase of other SiC polytypes, deviations in the arrangement of the layers in the polytypes, and the small size of the crystallites in the layer. The careful analysis of the XRD patterns of C90 and O90 shows that slightly shifted satellite peaks with different intensities are superimposed on the peaks denoted by 1 and 2 (Figure S2). This indicates that the samples are probably two-phased, with the 96R polytype of SiC with rhombohedral symmetry (SG #160 \(R3m\) and cell parameters a\({}_{0}\) = 3.0800 A, c\({}_{0}\) = 241.9000 A [26]) being the most likely candidate for a second crystalline phase--see Figure S2. These reflections are associated with distances between crystal planes of d\({}_{(00\text{-}81)}\) = 2.9864 A and d\({}_{(00\text{-}96)}\) = 2.5198 A, respectively. The reflection at about 2\(\theta\) = 35.1\({}^{\circ}\) cannot be associated with any of the structures mentioned so far but is very close to the reflection from d\({}_{(001)}\) = 2.333 A of 19H-SiC (which possess trigonal symmetry (SG #156 \(P\) 3\(m1\) and cell parameters a\({}_{0}\) = 3.0730 A, c\({}_{0}\) = 47.7530 A) [27]. It is also obvious that during the carbonization of C60 (blue trace in Figure 1), the crystallites of the thin films are in the nanoscale range, as the I-denoted reflection arising from the (111) planes of cubic 3C-SiC (cubic symmetry (SG #216 \(F\)-4\(3m\) and cell parameter a\({}_{0}\) = 3.3480 A) [28] becomes weak and very broad. There is no trace of crystalline phases in the diffraction patterns obtained from samples C3, O3, C5, and O5 (Figure 1). To clarify the structural quality of the thin films from the C60 samples, GIXRD was used in \(\varphi\) and \((\omega-2\theta)\) scans. The value of the optimal grazing angle (\(\omega\)) was determined by \((\omega-2\theta)\) scans to be \(\omega\) = 0.25\({}^{\circ}\), which corresponds to the maximum intensity of the d\({}_{(111)}\) peak (Figure 2a). We used \(\varphi\) scans in the range \(\varphi\) = (0-180)\({}^{\circ}\) regarding d\({}_{(111)}\) = 2.5103 A of 3C-SiC at 20 = 37.75\({}^{\circ}\)[28] (Figure 2a) and to determine the most preferred orientation for further GIXRD studies. A change in the number of the counts per second (cps) between 2 and 3 times compared to the optimal orientation at \(\varphi_{\text{opt}}\) was found; with deviations of 10\({}^{0}\) relative to \(\varphi_{\text{opt}}\), the signal decreases by 15-25% (Figure 2b). Furthermore, the GIXRD patterns in \((\omega-2\theta)\) scans taken at \(\varphi_{\text{opt}}\) as well as \((\varphi_{\text{opt}}-10^{\circ})\) and \((\varphi_{\text{opt}}+10^{\circ})\) and \(\omega\) = 0.25\({}^{\circ}\), presented in Figure 2c, show the real change of the maximum intensity of the d\({}_{(111)}\) peak [28] at the corresponding conditions. The measured XRD and GIXRD patterns (Figures 1 and 2) allow for the calculation of the grain size of the crystal grains in samples C60, C90, and O90 according to the Scherrer equation [29] and a more complete characterization of the films deposited after longer carbonization processes. The calculated values in the (0-20) scans (Figure 1) are about 7 nm for C60 and about 110 nm for the C90 and O90 samples. In these calculations, the peak of d\({}_{(00-39)}\) was used because no peaks of the second phase are observed in its vicinity (Figure S2a-e).