# Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications
## 8 Experimental Results  
We tested the oscillator circuit with MIWCM (see Figure 8) on a breadboard and printed circuit board (PCB) assembly. Table 15 shows part numbers and nominal values of the breadboard oscillator elements.  
\begin{table}
\begin{tabular}{c c c} \hline \hline
**Circuit Elements** & **Part Numbers and Nominal Values** \\ \hline Transistor \(T_{0}\) & BF245B \\ \hline Transistors \(T_{1},T_{M}\) & 2N3906 \\ \hline Inductor \(L\) & \(1\)\(\mathrm{\SIUnitSymbolMicro H}\) \\ \hline Capacitor \(C_{a}\) & 200 pF \\ \hline Capacitor \(C_{b}\) & 10 nF \\ \hline Capacitors \(C_{1}\), \(C_{2}\) & 60 pF \\ \hline Resistor \(R_{c}\) & 1 k\(\Omega\) \\ \hline Resistor \(R_{d}\) & 4 k\(\Omega\) \\ \hline \hline \end{tabular}
\end{table}
Table 15: Circuit elements used in the oscillator with MIWCM assembled on a solderless breadboard.  
\begin{table}
\begin{tabular}{c c c c c c c} \hline \hline
**Oscillator** & **Technology** & **Oscillation Frequency** & **Offset Frequency** & **Phase Noise (dBc/Hz)** & **Dissipation Power (mW)** & **Figure of Merit (dBc/Hz)** \\ \hline
[55] & GaN HEMT & 7.9 & \(1\) & \(-135\) & \(1456\) & \(-181.3\) \\ \hline
[56] & GaN HEMT & \(6.45\div 7.55\) & \(1\) & \(-132\) & \(198\) & \(-185.9\) \\ \hline
[57] & GaN HEMT & \(5.2\) & \(1\) & \(-125.7\) & \(16\) & \(-188\) \\ \hline
[58] & GaAs PHEMT & \(37.608\) & \(1\) & \(-112.31\) & \(130\) & \(-182.7\) \\ \hline
[59] & GaN HEMT & \(1.93\) & \(1\) & \(-149\) & \(400\) & \(-189\) \\ \hline
[60] & GaN HEMT & \(7.26\) & \(1\) & \(-122.48\) & \(18.33\) & \(-187\) \\ \hline
[61] & GaN HEMT & \(8.8\) & \(1\) & \(-124.55\) & \(21.6\) & \(-190.1\) \\ \hline
[62] & SiGe & \(8.99\) & \(0.1\) & \(-120.05\) & \(18\) & \(-206.58\) \\ \hline
[63] & GaN HEMT & \(4.95\) & \(1\) & \(-143\) & \(320\) & \(-191.84\) \\ \hline
[64] & InGaP HBT & \(5.05\div 6.35\) & \(0.1\) & \(-103,-95\) & \(350\) & \(-171.6,-165.6\) \\ \hline
[65] & CMOS & \(1.36\div 1.86\) & \(0.1\) & \(-121\) & \(2.7\) & \(-202\) \\ \hline
[66] & CMOS & \(8\) & \(1\) & \(-134.3\) & \(6.6\) & \(-204\) \\ \hline
[67] & CMOS & \(7.4\div 8.4\) & \(10\) & \(-151.5\) & \(29\) & \(-194.3,-195.6\) \\ \hline
[68] & CMOS & \(2.28\div 2.59\) & \(0.1\) & \(-103.6,-125.5\) & \(1.9\) & \(-188,-211\) \\ \hline
[69] & CMOS & \(14\div 18\) & \(1\) & \(-113,-110\) & \(24\) & \(\begin{array}{c}\\In the oscillator circuit with MIWCM of Figure 8, the value of \(m\) is equal to 1. At the operating point, \(V_{1,2}=6\) V and \(I_{1}=2.7\) mA. Figure 29 shows the measured oscillator output spectrum at the fundamental frequency of 18.7 MHz with an output power of \(-14.8\) dBm. We used a spectrum analyzer USB-SA44B (Battle Ground, WA, USA) and an Auburn P-20A RF probe (Auburn, WA, USA) with a 10:1 voltage ratio.  
Figure 30 shows the PCB assembly of the oscillator with MIWCM (\(m=0\)). Table 16 indicates part numbers and nominal values of components assembled on PCB. We also used the USB-SA44B spectrum analyzer with Auburn P-20A RF probe to measure the oscillator output spectrum (see Figure 31) at \(V_{1,2}=9\) V and RBW = 100 kHz. As shown in Figure 31, the oscillation frequency is 944.4 MHz, and the power level of the output signal is \(-40.2\) dBm. In estimating the actual power level, we should consider that the attenuation provided by the P-20A RF probe is 20 dB, and an insertion loss of the buffer amplifier is 2.2 dB.  
Figure 30: Printed circuit board assembly of the oscillator with multiple-output improved Wilson current mirror (\(m=0\)).  
Figure 29: The output spectrum of the prototype oscillator with multiple-output improved Wilson current mirror (\(m=1\)).