## Results
### Electrochemical Analysis  
#### 3.2.1 Galvanostatic Measurements  
For the purpose of studying the influence of the laser processing on the discharge capacity, the coin cells with structured and unstructured cathodes were cycled at different C-rates from C/10 to 5C (Figure 4). During formation at C/10 and second step C/5, the specific discharge capacity for cells containing unstructured cathode was slightly higher compared to cells with structured cathodes (165  mAh/g). However, the thickness of electrode showed stronger influence on the rate capability for C-rates >C/5. For cells containing cathode of thickness of 91 \(\upmu\)m, all cells showed similar discharge capacities of 160 mAh/g at C/5. The difference between cells containing structured and unstructured cathode was more obvious when the discharge rate was increased to C/2. At higher discharge rates from 1C to 5C, significant differences in the discharge capacities could be observed between cells with structured and unstructured cathodes. Cells with a structured cathode had 150 mAh/g capacity at 1C, while cells with an unstructured cathode had 140 mAh/g. At 3C and 5C, a structured cathode with 200 \(\upmu\)m pitch distance provided the highest discharge capacity of 100 mAh/g and 50 mAh/g, respectively, which is almost twice comparing to cells with unstructured cathodes. After the discharge rate was reduced to C/5, all cells show a capacity of about 160 mAh/g. However, compared to the capacity at the first C/5, an irreversible loss in capacity of 5 mAh/g was observed. Figure 4: Specific discharge capacity of cells containing (**a**) 91 \(\upmu\)m, (**b**) 151 \(\upmu\)m, and (**c**) 250 \(\upmu\)m thick electrodes; and (**d**) the discharge capacity of cells with different cathode thicknesses and 200 \(\upmu\)m pitch distance at different C-rates. Figure 4b,c shows significant capacity deterioration of cells with cathodes of 151 \(\upmu\)m and 250 \(\upmu\)m when being discharged faster than C/2. For cells with cathodes of 151 \(\upmu\)m thickness, a structured cathode with 200 \(\upmu\)m pitch distance retained the same discharge capacity of 160 mAh/g when the C-rate increased from C/5 to C/2 and maintained the most specific discharge capacity at 1C to 3C. At 5C, less than 10 mAh/g specific capacity was observed for all cells. At 1C and 2C, cells containing cathodes with 200 \(\upmu\)m pitch distance showed higher specific capacity. As for cells with 250 \(\upmu\)m cathodes, less than 10% of the initial capacity was observed when being cycled at 2C to 5C. Compared to cells with unstructured cathode, cells with structured cathode with 200 \(\upmu\)m pitch distance showed enhanced specific capacities of 30 mAh/g and 50 mAh/g at C/2, and 1C, respectively. However, cells with cathodes having a pitch distance of 400 \(\upmu\)m and 600 \(\upmu\)m provided less specific capacity in comparison to cells with unstructured cathodes. Due to the significant improvement of discharge capacity observed for cells with cathodes and 200 \(\upmu\)m pitch distance, it was interesting to investigate the discharge capacity of all cells containing unstructured cathodes and structured cathodes with 200 \(\upmu\)m pitch distance, which is shown in Figure 4d. The discharge capacity increased from 4 mAh to 11 mAh at C/10 and C/5 when the cathode thickness increased from 91 \(\upmu\)m to 250 \(\upmu\)m. For cells with cathodes having a film thickness larger than 100 \(\upmu\)m, structured cathodes provided a higher discharge capacity, from C/2 to 2C. At 1C, a capacity of 6 mAh was retained for cells with structured cathode having a film thickness of 250 \(\upmu\)m, which is twice that of the cells with unstructured cathodes, while for film thickness of 151 \(\upmu\)m the structured cathode enables a three times higher cell capacity in comparison to cells with unstructured cathode. However, applying a structured cathode with a film thickness of 91 \(\upmu\)m delivers higher discharge capacity at 3C, while the cell capacity drops under 1 mAh after being cycled at 5C.