# Advances in High-Speed, High-Power Photodiodes: From Fundamentals to Applications
## 2 Overall Design Considerations for Photodiodes
### Saturation Current and Output Power
\begin{table}
\begin{tabular}{l l l l l l} \hline
**PD Type \({}^{*}\)** & **BW (GHz) \({}^{**}\)** & **R (A/W)** & \(I_{Sat}\) **(mA)** & \(P_{out}\)**(dBm)**, \(V_{bias}\)** & **Ref.** \\ \hline CC–MUTC-PD & \(>\)110 (4 μm) & 0.17 & 27 & 7.80 (6.03 mW) @ 110 GHz (6 μm), – 4 V & [101] \\ \hline MUTC-PD & 156 (4.5 μm, – 3 V) & 0.165 & 14.6 & –\(0.53\) (0.885 mW) @ 170 GHz, – 3.5 V & [111] \\ \hline MUTC-PD & 150 (4.5 μm, – 3 V) & 0.165 & 14.6 & –\(0.16\) (0.964 mW) @ 170 GHz, – 3.5 V & [111] \\ \hline MUTC-PD & 200 (3.6 μm) & 0.07 & 8.4 & –\(2.14\) (0.611 mW) @ 200 GHz, – 2 V & [113] \\ \hline MUTC-PD & 230 (3 μm) & 0.07 & 5.85 & –\(4.94\) (0.321 mW) @ 220 GHz, – 2 V & [113] \\ \hline CC–MUTC-PD & 105 (10 μm, – 5.0 V) & 0.15 & \(>\)30 & 14 (25.12 mW) @ 80 GHz (10 μm), – 2 V & [114] \\ \hline CC–MUTC-PD & 117 (8 μm, – 3.0 V) & 0.15 & \(>\)20 & 11.3 (13.49 mW) @ 100 GHz (8 μm), – 2 V & [114] \\ \hline CC–MUTC-PD & 117 (8 μm, – 3.0 V) & 0.15 & \(>\)20 & 8.50 (7.08 mW) @ 110 GHz (8 μm), – 2.5 V & [114] \\ \hline CC–MUTC-PD & 150 (4 μm, – 3.0 V) & 0.15 & 8.0 & –\(3.0\) (0.5 mW) @ 150 GHz (4 μm), – 2.5 V & [114] \\ \hline CC–MUTC-PD & 100 (7 μm, – 1.1 V) & 0.11 & 4.9 & –\(19.3\) (11.75 μm) @ 300 GHz (7 μm), 0 V & [115] \\ \hline CC–MUTC-PD & 125 (5 μm, – 1.1 V) & 0.11 & 25.3 & –\(10.5\) (89.13 mW) @ 300 GHz (10 μm), – 18 V & [115] \\ \hline WG–MUTC-PD & 165 (2 × 15 μm, – 1.2 V) & 0.312 & 10.6 & –\(1.69\) (0.678 mW) @ 215 GHz, – 2 V & [119] \\ \hline CC–MUTC-PD & 70 (9 μm) & 0.2 & 40 & –\(2.60\) (0.55 mW) @ 160 GHz, – 5 V & [121] \\ \hline CC–MUTC-PD & 13 (40 μm, – 6 V) & 0.7 & 234 ( – 10 V) & 41.5 (14.2 W) @ 1 GHz, – 36 V & [122] \\ \hline CC–MUTC-PD & 13 (40 μm, – 6 V) & 0.7 & 234 ( – 10 V) & 40 (10 W) @ 10 GHz, – 36 V & [122] \\ \hline CC–MUTC-PD & 13 (40 μm, – 6 V) & 0.7 & 234 ( – 10 V) & 29.8 (0.955 W) @ 15 GHz, – 10 V & [122] \\ \hline UTC-PD & 120 (8 μm) & NA & 21 & 0 ( l mW) @ 120 GHz, – 3V & [123,124] \\ \hline CC–MUTC-PD & 10 (50 μm) & 0.75 & 300 & 32.7 (1.86 W) @ 10 GHz, – 14 V & [130] \\ \hline CC–MUTC-PD & 11 (50 μm) & 0.75 & 228 & 30.1 (1.02 W) @ 10 GHz, – 11 V & [131] \\ \hline UTC-PD on SiC & NA & NA & 15.5 & 0.22 (1.05 mW) 300 GHz, – 1 V & [134] \\ \hline UTC-PD on SiC & NA & NA & 18 & 2.01 (1.59 mW) 300 GHz, bias optimized & [134] \\ \hline PIN–PD & 1 (90 μm) & NA & 620 & 26.5 (0.447 W) @ 1 GHz, – 5 V & [136] \\ \hline PIN–PD & \(>\) 6 (34 μm) & NA & 260 & 26 (0.398 W) @ 6 GHz, – 5 V & [136] \\ \hline PIN–PD & \(>\) 5 (50 μm) & 0.55 & 120 & 25.8 (0.38 W) @ 5 GHz & [137] \\ \hline PIN–PD & 7 (70 μm) & 0.6 & 200 & 29 (0.794 W) @ 5 GHz, – 5.8 V & [138] \\ \hline PIN–PD & 40 \(\sim\) 50 (10 μm) & -0.7 & 30 & 14 (25.12 mW) @ 50 GHz, – 2 V & [139] \\ \hline MUTC-PD array & 23.8 (40 μm) & 0.438 & 86.8 & 16 (39.81 mW) @ 12 GHz, – 3 V & [140] \\ \hline MUTC-PD & 34 (20 μm, – 4 V) & 0.41 & -70 & 17.1 (51.29 mW) @ 30 GHz, – 4 V & [141] \\ \hline MUTC-PD & \(\sim\) 45 (15 μm, – 4 V) & 0.41 & 38 & 14.6 (28.84 mW) @ 40 GHz, – 4 V & [141] \\ \hline WG–UTC-PD & \(>\) 67 (3 × 10 μm, – 3 V) & 0.19 & 13 & 1.1 (1.29 mW) @ 100 GHz, – 3 V & [142] \\ \hline TTR-UTC-PD & \(>\) 110 (3 × 20 μm2 ) & 0.5 & 16 & 0 ( l mW) @ 110 GHz, – 8 V & [143] \\ \hline NBUTC-PD & 290 (64 μm2, – 3.0 V) & 0.15 & 13.6 & 1.85 (1.53 mW) @ 110 GHz, – 3 V & [144] \\ \hline NBUTC-PD & 280 (64 μm2, – 3.0 V) & 0.15 & 18 & 4.12 (2.58 mW) @ 110 GHz, – 3 V & [144] \\ \hline NBUTC-PD & 200 (64 μm2, – 3.0 V) & 0.15 & 29 & 8.10 (6.46 mW) @ 110 GHz, – 3 V & [144] \\ \hline NBUTC-PD & 180 (64 μm2, – 3.0 V) & 0.15 & 37 & 10.7 (11.75 mW) @ 110 GHz, – 3 V & [144] \\ \hline Type-II UTC-PD & 140 (3.2 μm, 0 V) & 0.09 & 8 & –\(13.9\) (40.74 μm) @ 160 GHz, 0 V & [145] \\ \hline NBUTC-PD & 315 (3.5 μm, – 0.5 V) & 0.1 & 13 & 0.174 (1.04 mW) @ 280 GHz, – 12 V & [147,148] \\ \hline RCE–UTC-PD & 300 (3 × 3 μm μm2) & 0.12 & 9.8 & –\(1.25\) (0.75 mW) @ 300 GHz, – 1 V & [149] \\ \hline Two UTC–PD & 70 per PD & 0.17 & 20 & 0.79 (1.2 mW) @ 300 GHz, – 3.9 V & [150] \\ \hline Type-II UTC–PD & 330 (3 μm, – 0.5 V) & 0.11 & 13 & –\(3\) (0.5 mW) @ 320 GHz, – 1 V & [151] \\ \hline MUTC-PD & \(\sim\)100 & 0.22 & 20 & –\(2.7\) (0.54 mW) @ 350 GHz, – 2.5 V & [152] \\ \hline \end{tabular}  
* Waveguide–type PDs are denoted as ‘WG’, while others are vertical double–mesa PDs. ** PD diameter, area, and bias voltage are shown in brackets.  
\end{table}