Course: MOS Transistors
Modules:
About This Course, Intuitive Overview of the MOS Transistor
CMOS Processes, Semiconductors - Part 1, Semiconductors - Part 2, Semiconductors - Part 3, Conduction – Part 1, Conduction – Part 2, Contact Potentials, pn Junctions - Zero and Forward Bias, pn Junctions –Under Reverse Bias – Part 1, pn Junctions –Under Reverse Bias – Part 2
The Two-Terminal MOS Structure – Flatband Voltage, The Two-Terminal MOS Structure – Surface Condition, The Two-Terminal MOS Structure – General Analysis, The Two-Terminal MOS Structure – Inversion, The Two-Terminal MOS Structure – Strong Inversion, The Two-Terminal MOS Structure – Weak Inversion, The Two-Terminal MOS Structure – Small-Signal Capacitance, The Three-Terminal MOS Structure – Part 1, The Three-Terminal MOS Structure – Part 2
Introduction, Complete All-Region Model, Simplified All-Region Models, Strong Inversion Models – 1, Strong Inversion Models – 2
Strong Inversion Models, Weak Inversion Models, Source Reference vs. Body Reference, Effective Mobility, Additional Topics
Small-Dimension Effects - Velocity Saturation, Small-Dimension Effects – Channel Length Modulation, Small-Dimension Effects - Charge Sharing, Small-Dimension Effects – Drain-Induced Barrier Lowering, Small-Dimension Effects – Combining Several Effects Into One Model, Small-Dimension Effects – Hot Carrier Effects, Small-Dimension Effects - Velocity Overshoot and Ballistic Operation, Small-Dimension Effects - Polysilicon Depletion
Small-Dimension Effects - Quantum-Mechanical Effects; Gate Current, Small-Dimension Effects – Junction Leakage, Small-Dimension Effects - Scaling and New Technologies, Modeling for Circuit Simulation – Approaches and Properties of Good Models, Modeling for Circuit Simulation – Model Formulation Considerations, Modeling for Circuit Simulation – Parameter Extraction 1, Modeling for Circuit Simulation – Parameter Extraction 2, Modeling for Circuit Simulation – Representative Compact Models, Modeling for Circuit Simulation – Benchmark Tests
Large-Signal Dynamic Operation – Quasi-Static Operation, Large-Signal Dynamic Operation – Terminal Currents in QS Operation, Large-Signal Dynamic Operation – Charging Currents in QS Operation, Large-Signal Dynamic Operation – Evaluation of Charges, Large-Signal Dynamic Operation – Transit Time, Large-Signal Dynamic Operation – Transient Response Using QS Modeling, Large-Signal Dynamic Operation – Non-Quasi-Static Operation, Large-Signal Dynamic Operation – Extrinsic Parasitics
Small-Signal Modeling – Conductance Parameter Definitions and Equivalent Circuits, Small-Signal Modeling – Conductance Parameters Due to Gate and Body Leakage, Small-Signal Modeling –Transconductance, Small-Signal Modeling – Source-Drain and Output Conductance, Small-Signal Modeling – Capacitance Definitions and Equivalent Circuits, Small-Signal Modeling – Capacitance Evaluation and Properties
Small-Signal Modeling – Complete Capacitance Parameter Set, Small-Signal Modeling – Complete Quasi-Static Model, Small-Signal Modeling – y-Parameter Model, Small-Signal Modeling – Non-Quasi-Static Model, Small-Signal Modeling –  Model Comparison, Small-Signal Modeling – RF Models
Final Exam
Noise - Introduction, Noise - Thermal Noise, Noise - High-Frequency Considerations, Noise - Flicker Noise, Ion Implantation – Threshold Adjust Implant, Halo Implants, Well Proximity Effect, Stress Effects, Statistical Variability, Epilogue